National Library of Energy BETA

Sample records for dong yang semiconductor

  1. Ados Co Ltd Dong Yang Semiconductor | Open Energy Information

    Open Energy Info (EERE)

    Ados Co Ltd Dong Yang Semiconductor Jump to: navigation, search Name: Ados Co Ltd (Dong Yang Semiconductor) Place: Seoul, Seoul, Korea (Republic) Product: Korean manufacturer of...

  2. Dong Kwun Kim

    Broader source: Energy.gov [DOE]

    [[{"type":"media","view_mode":"media_large","fid":"885466","attributes":{"alt":"Dong Kim Portrait.jpg","class":"media-image caption","height":"480","style":"font-size: 12px; width: 360px; height:...

  3. dong-98.pdf

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1 Vertical Profiles of Continental Stratus Cloud Properties Retrieved from Radar/Lidar/Radiometer Measurements During ARESE and SUCCESS X. Dong Analytical Services and Materials, Inc. Hampton, Virginia E. E. Clothiaux and T. P. Ackerman The Pennsylvania State University University Park, Pennsylvania P. Minnis NASA-Langley Research Center Hampton, Virginia Introduction Knowledge of the vertical structure of a cloud's microphysical characteristics is important for a variety of reasons. The

  4. dong(3)-98.pdf

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    X. Dong and W. L. Smith, Jr. Analytical Services and Materials, Inc. Hampton, Virginia P. ... 1995 and updates) and GOES-8 (Minnis and Smith, Jr. 1998) measurements over the ARM SGP ...

  5. dong(2)-98.pdf

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    5 Validation of Cloud Microphysical Retrievals from Surface- and Satellite-Based Measurements Obtained During the Fall of 96 Penn State Aircraft Experiment X. Dong Analytical Services and Materials, Inc., Hampton, Virginia E. E. Clothiaux, N. Miles, J. Verlinde, and T. P. Ackerman The Pennsylvania State University University Park, Pennsylvania P. Minnis NASA-Langley Research Center Hampton, Virginia B. A. Albrecht University of Miami Miami, Florida Introduction Comparisons with aircraft in situ

  6. dong(2)-99.PDF

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stratus Cloud Microphysical Retrievals that Utilize Radar, Microwave Radiometer, and Pyranometer Measurements X. Dong Analytical Services and Materials, Inc. Hampton, Virginia P. Minnis National Aeronautics and Space Administration Langley Research Center Hampton, Virginia G. G. Mace Meteorology Department University of Utah Salt Lake City, Utah E. E. Clothiaux Department of Meteorology The Pennsylvania State University University Park, Pennsylvania J. C. Liljegren Ames Laboratory Ames, Iowa

  7. Dong Energy London Array Limited Formerly known as CORE Ltd ...

    Open Energy Info (EERE)

    Limited is a UK Joint Venture between Farm energy and Energi E2, involved in offshore wind farms in the outer Thames Estuary. References: Dong Energy London Array Limited...

  8. Spreading of energy in the Ding-Dong model

    SciTech Connect (OSTI)

    Roy, S.; Pikovsky, A.

    2012-06-15

    We study the properties of energy spreading in a lattice of elastically colliding harmonic oscillators (Ding-Dong model). We demonstrate that in the regular lattice the spreading from a localized initial state is mediated by compactons and chaotic breathers. In a disordered lattice, the compactons do not exist, and the spreading eventually stops, resulting in a finite configuration with a few chaotic spots.

  9. Woo-Sun Yang

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Woo-Sun Yang Woo-Sun Yang Woo-Sun-Yang.jpg Woo-Sun Yang , Ph.D. HPC Consultant WYang@lbl.gov Phone: (510) 486-5735 Fax: (510) 486-4316 1 Cyclotron Road Mail Stop 943-256 Berkeley, CA 94720 Journal Articles Jack Deslippe, Brian Austin, Chris Daley, Woo-Sun Yang, "Lessons learned from optimizing science kernels for Intel's "Knights-Corner" architecture", CISE, April 1, 2015, Conference Papers Wendy Hwa-Chun Lin, Yun (Helen) He, and Woo-Sun Yang, "Franklin Job Completion

  10. Eunkyung Yang | Photosynthetic Antenna Research Center

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Eunkyung Yang Eunkyung Yang Eunkyung Yang Postdoctoral Research Associate E-mail: ekyang@wustl.edu Phone: 314.935.6530 Postdoctoral...

  11. Finite mass gravitating Yang monopoles

    SciTech Connect (OSTI)

    Cebeci, Hakan; Sarioglu, Oezguer; Tekin, Bayram

    2008-12-15

    We show that gravity cures the infrared divergence of the Yang monopole when a proper definition of conserved quantities in curved backgrounds is used, i.e. the gravitating Yang monopole in cosmological Einstein theory has a finite mass in generic even dimensions (including time). In addition, we find exact Yang-monopole type solutions in the cosmological Einstein-Gauss-Bonnet-Yang-Mills theory and briefly discuss their properties.

  12. yang-99.PDF

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Moderate Spectral Resolution Radiative Transfer Modeling Based on Modified Correlated-k Method S. Yang, P. J. Ricchiazzi, and C. Gautier University of California, Santa Barbara Santa Barbara, California Introduction A new set of high spectral resolution sensors to monitor the variations of cloud and atmospheric properties have been developed and are starting to be deployed either in space or on the ground. The development of improved retrieval algorithms and the analysis of these new data sets

  13. Joyce Yang | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Joyce Yang About Us Joyce Yang - Director, The National Laboratory Impact Initiative Joyce Yang is the Director of the National Laboratory Impact Initiative at the U.S. Department of Energy, Office of Energy Efficiency and Renewable Energy (EERE). In that role, Joyce is responsible for overseeing and coordinating new technology to market (T2M) activities and initiatives that are designed to significantly increase the industrial impact of EERE's $600 million national laboratory R&D portfolio.

  14. Shihui (Shane) Yang | Bioenergy | NREL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shihui (Shane) Yang is a research scientist in the Bioprocess Research group within the National Renewable Energy Laboratory's (NREL's) National Bioenergy Center. He received his ...

  15. Shang Yang Solar | Open Energy Information

    Open Energy Info (EERE)

    Shang Yang Solar Jump to: navigation, search Name: Shang Yang Solar Place: Taiwan Sector: Solar Product: A subsidiary set up by CMC Magnetics to produce solar modules. References:...

  16. Microsoft Word - Yang_seminar_012011.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    8600 High performance organic and inorganic thin film solar cell via solution process Yang Yang Department of Materials Science and Engineering University of California, Los...

  17. Biographical sketch - Dong-Kyun Seo | Center for Bio-Inspired Solar Fuel

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Production Dong-Kyun Seo BIOGRAPHICAL SKETCH a. Professional Preparation Seoul National University Chemistry B.S. 1990 Seoul National University Chemistry M.S. 1992 North Carolina State University Chemistry Ph. D. 1997 b. Area of Specialization: Inorganic Chemistry, Materials Science c. Appointments 12/11 - Founder and CTO, Matteren Corporation, Arizona 8/07- Associate Professor, Arizona State University, Tempe, Arizona 8/01-8/07 Assistant Professor, Arizona State University, Tempe, Arizona

  18. Microsoft PowerPoint - DongHuang_ARMposter2008.ppt [Compatibility Mode]

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Three-dimensional Tomography of Cloud Microphysics by Combining Microwave Radar and Radiometer Measurements Dong Huang, Yangang Liu, and Warren Wiscombe Summary Retrieving cloud liquid water distributions with cloud tomography is ill-posed. Regularization methods can improve the retrievals, but still not enough when only a few sensors are available. Cloud radar complements to passive sensors, and can be used to further constrain the tomographic retrievals. Adding radar data into cloud tomography

  19. Microsoft PowerPoint - DongHuang_ARMposter2009.ppt [Compatibility Mode]

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    cloud water distribution from an air-borne scanning microwave radiometer: Wakasa Bay field experiment results Dong Huang, Albin Gasiewski, and Warren Wiscombe 1. A mobile cloud tomography setup has some advantages over a fixed one. The tomographic method involves scanning clouds from a multiplicity of directions and locations, and inverting the resulting radiometric measurements to obtain 2D/3D cloud water distributions. A fixed ground-based setup will needed more than four microwave radiometers

  20. Ming-Yang Ho | Photosynthetic Antenna Research Center

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ming-Yang Ho Ming-Yang Ho Ming-Yang Ho Graduate Student E-mail: mxh504@psu.edu Website: Pennsylvania State University Graduate Students...

  1. Semiconductor Revolution

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy Frontier Research Centers: Solid-State Lighting Science Center for Frontiers of ... Semiconductor Revolution HomeEnergy ResearchEFRCsSolid-State Lighting Science EFRC...

  2. Microsoft PowerPoint - DongHuang_ARMposter2007_v4.ppt [Compatibility Mode]

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Distribution with 3D Cloud Tomography Dong Huang, Yangang Liu, and Warren Wiscombe Tomography is a technique for imaging an object's interior from its projections The inverse problem is ill-posed, but regularization methods can be used to Summary With 4 radiometers having 0.3 K noise level, an object's interior from its projections Warner et al. proposed using tomography to determine cloud liquid water distribution in 1980s. Now is a good time to revisit this method because of advances in

  3. Microsoft PowerPoint - DongHuang_ARMslides2007.ppt [Compatibility Mode]

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Distribution with 3D Cloud Tomography Distribution with 3D Cloud Tomography C n "X " l d ? Dong Huang 1 Yangang Liu 1 Can we X-ray clouds? Yangang Liu 1 Warren Wiscombe 1,2 microwave radiometers ARM science team meeting March 28, 2007 Tomography is a method for imaging the interior of an object from its projections CAT scanner C t d interior of an object from its projections Computed Tomography Tree root distribution Tomography 2 Mar 2007 ARM SciTeam Meeting What if the patient is a

  4. Semiconductor Revolution

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Semiconductor Revolution - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Energy Defense Waste Management Programs Advanced

  5. Chen Ning Yang, Weak Interactions, and Parity Violation

    Office of Scientific and Technical Information (OSTI)

    National Medal of Science 1995 Einstein Medal 1994 Franklin Institute Award, Franklin Institute C. N. Yang Institute for Theoretical Physics, SUNYSB The AAPPS Chen Ning Yang Award...

  6. Deconfinement in Yang-Mills Theory through Toroidal Compactification...

    Office of Scientific and Technical Information (OSTI)

    Deconfinement in Yang-Mills Theory through Toroidal Compactification Citation Details In-Document Search Title: Deconfinement in Yang-Mills Theory through Toroidal Compactification ...

  7. Jacqueline R. Yang, Ph.D. | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Jacqueline R. Yang, Ph.D. About Us Jacqueline R. Yang, Ph.D. - Deputy CIO for Architecture Engineering, Technology, and Innovation

  8. Tianjin Tai Yang Photo electronic Technology Co Ltd | Open Energy...

    Open Energy Info (EERE)

    Tai Yang Photo electronic Technology Co Ltd Jump to: navigation, search Name: Tianjin Tai Yang Photo-electronic Technology Co., Ltd Place: Tianjin Municipality, China Sector: Solar...

  9. Women @ Energy: Ulrike Meier Yang | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Ulrike Meier Yang Women @ Energy: Ulrike Meier Yang March 14, 2014 - 10:18am Addthis Ulrike Meier Yang is leading the Computational Mathematics group at the Center for Applied Scientific Computing at Lawrence Livermore National Laboratory. Ulrike Meier Yang is leading the Computational Mathematics group at the Center for Applied Scientific Computing at Lawrence Livermore National Laboratory. Check out other profiles in the Women @ Energy series and share your favorites on Pinterest. Ulrike Meier

  10. Unitary lens semiconductor device

    DOE Patents [OSTI]

    Lear, K.L.

    1997-05-27

    A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

  11. Unitary lens semiconductor device

    DOE Patents [OSTI]

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  12. Semiconductor bridge (SCB) detonator

    DOE Patents [OSTI]

    Bickes, R.W. Jr.; Grubelich, M.C.

    1999-01-19

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge (SCB) igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length. 3 figs.

  13. Semiconductor bridge (SCB) detonator

    DOE Patents [OSTI]

    Bickes, Jr., Robert W.; Grubelich, Mark C.

    1999-01-01

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

  14. Interconnected semiconductor devices

    DOE Patents [OSTI]

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1990-10-23

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  15. Chen Ning Yang, Weak Interactions, and Parity Violation

    Office of Scientific and Technical Information (OSTI)

    absolute law of parity conservation had been violated." 2 "Yang overturned Paul ... ... He explained that symmetry laws generate the law of conservation. The law of right-left ...

  16. Dali Yang er Hydropower Development Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Yang er Hydropower Development Co Ltd Jump to: navigation, search Name: Dali Yanger Hydropower Development Co Ltd Place: Dali Prefecture, Dali, Yunnan Province, China Zip: 625000...

  17. Shenzhen Heng Yang Solar Industrial Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Solar Industrial Co Ltd Jump to: navigation, search Name: Shenzhen Heng Yang Solar Industrial Co Ltd Place: Shenzhen, Guangdong Province, China Zip: 518081 Product: Imported...

  18. Yang County Kafang Hydro Power Development Co Ltd | Open Energy...

    Open Energy Info (EERE)

    County Kafang Hydro Power Development Co Ltd Jump to: navigation, search Name: Yang County Kafang Hydro Power Development Co. Ltd. Place: Hanzhong, Shaanxi Province, China Zip:...

  19. Method of doping a semiconductor

    DOE Patents [OSTI]

    Yang, Chiang Y.; Rapp, Robert A.

    1983-01-01

    A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

  20. Semiconductor Science and Technology

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    lighting ReSeaRch & development at Sandia national laboRatoRieS The bridge to a new way of lighting the world ssls.sandia.gov Initiates decades-long investment into compound semiconductor science and technology, eventually establishing its Center for Compound Semiconductor Science and Technology 1 9 7 7 Begins investing in gallium nitride (GaN) materials, physics, and device capabilities 1 9 9 5 Launches its Grand Challenge Laboratory Directed Research and Development Project, "A

  1. dong-99.PDF

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    general approach adopted by the ARM Program is to use surface observations to develop, test, and improve cloud parameterizations in the context of a single-column model (SCM),...

  2. Tao Dong | Bioenergy | NREL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Professional Experience Postdoctoral Researcher, National Renewable Energy Laboratory, National Bioenergy Center, 2013-present Featured Publications "Direct Quantification of Fatty ...

  3. Wide Bandgap Semiconductors | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Wide Bandgap Semiconductors Wide Bandgap Semiconductors Addthis Duration 1:55 Topic Energy Sector Jobs Manufacturing Transmission Innovation

  4. Amorphous semiconductor solar cell

    DOE Patents [OSTI]

    Dalal, Vikram L.

    1981-01-01

    A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

  5. Semiconductor radiation detector

    DOE Patents [OSTI]

    Patt, Bradley E.; Iwanczyk, Jan S.; Tull, Carolyn R.; Vilkelis, Gintas

    2002-01-01

    A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.

  6. Metastable vacuum decay in center-stabilized Yang-Mills theory...

    Office of Scientific and Technical Information (OSTI)

    Metastable vacuum decay in center-stabilized Yang-Mills theory at large N Prev Next Title: Metastable vacuum decay in center-stabilized Yang-Mills theory at large N Authors: ...

  7. Method of passivating semiconductor surfaces

    DOE Patents [OSTI]

    Wanlass, Mark W.

    1990-01-01

    A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  8. Method of passivating semiconductor surfaces

    DOE Patents [OSTI]

    Wanlass, M.W.

    1990-06-19

    A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  9. Intrinsic Semiconductor | Open Energy Information

    Open Energy Info (EERE)

    Intrinsic Semiconductor is a privately held emerging growth company focusing on materials and device technologies based on silicon carbide (SiC) and gallium nitride (GaN)...

  10. Layered semiconductor neutron detectors

    DOE Patents [OSTI]

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  11. Semiconductor devices incorporating multilayer interference regions

    DOE Patents [OSTI]

    Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

    1987-08-31

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

  12. Semiconductor devices incorporating multilayer interference regions

    DOE Patents [OSTI]

    Biefeld, Robert M.; Drummond, Timothy J.; Gourley, Paul L.; Zipperian, Thomas E.

    1990-01-01

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

  13. Perturbation Theory of Massive Yang-Mills Fields

    DOE R&D Accomplishments [OSTI]

    Veltman, M.

    1968-08-01

    Perturbation theory of massive Yang-Mills fields is investigated with the help of the Bell-Treiman transformation. Diagrams containing one closed loop are shown to be convergent if there are more than four external vector boson lines. The investigation presented does not exclude the possibility that the theory is renormalizable.

  14. Process for producing chalcogenide semiconductors

    DOE Patents [OSTI]

    Noufi, Rommel; Chen, Yih-Wen

    1987-01-01

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  15. Process for producing chalcogenide semiconductors

    DOE Patents [OSTI]

    Noufi, R.; Chen, Y.W.

    1985-04-30

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  16. Variable temperature semiconductor film deposition

    DOE Patents [OSTI]

    Li, Xiaonan; Sheldon, Peter

    1998-01-01

    A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  17. Variable temperature semiconductor film deposition

    DOE Patents [OSTI]

    Li, X.; Sheldon, P.

    1998-01-27

    A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  18. Physics with isotopically controlled semiconductors

    SciTech Connect (OSTI)

    Haller, E. E.

    2010-07-15

    This paper is based on a tutorial presentation at the International Conference on Defects in Semiconductors (ICDS-25) held in Saint Petersburg, Russia in July 2009. The tutorial focused on a review of recent research involving isotopically controlled semiconductors. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, is the most prominent effect for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples.

  19. A Spintronic Semiconductor with Selectable Charge Carriers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive ... Strategies for developing spintronic semiconductors have been based on surface doping or ...

  20. A Spintronic Semiconductor with Selectable Charge Carriers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Spintronic Semiconductor with Selectable Charge Carriers A Spintronic Semiconductor with Selectable Charge Carriers Print Wednesday, 28 August 2013 00:00 Accentuating the ...

  1. EMei Semiconductor Materials Plant Research Institute | Open...

    Open Energy Info (EERE)

    EMei Semiconductor Materials Plant Research Institute Jump to: navigation, search Name: EMei Semiconductor Materials Plant & Research Institute Place: Emei, Sichuan Province, China...

  2. Topsil Semiconductor Materials AS | Open Energy Information

    Open Energy Info (EERE)

    Topsil Semiconductor Materials AS Jump to: navigation, search Name: Topsil Semiconductor Materials AS Place: Frederikssund, Denmark Zip: 3600 Product: Danish specialist...

  3. Semiconductor radiation detector

    SciTech Connect (OSTI)

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  4. Semiconductor Nanocrystals for Biological Imaging

    SciTech Connect (OSTI)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  5. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    DOE Patents [OSTI]

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  6. Multiscale MonteCarlo equilibration: Pure Yang-Mills theory

    SciTech Connect (OSTI)

    Endres, Michael G.; Brower, Richard C.; Orginos, Kostas; Detmold, William; Pochinsky, Andrew V.

    2015-12-29

    In this study, we present a multiscale thermalization algorithm for lattice gauge theory, which enables efficient parallel generation of uncorrelated gauge field configurations. The algorithm combines standard Monte Carlo techniques with ideas drawn from real space renormalization group and multigrid methods. We demonstrate the viability of the algorithm for pure Yang-Mills gauge theory for both heat bath and hybrid Monte Carlo evolution, and show that it ameliorates the problem of topological freezing up to controllable lattice spacing artifacts.

  7. Impurity gettering in semiconductors

    DOE Patents [OSTI]

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  8. Impurity gettering in semiconductors

    DOE Patents [OSTI]

    Sopori, B.L.

    1995-06-20

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device is disclosed. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500 C to about 700 C for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal. 1 fig.

  9. Deconfinement in Yang-Mills Theory through Toroidal Compactification

    SciTech Connect (OSTI)

    Simic, Dusan; Unsal, Mithat; /Stanford U., Phys. Dept. /SLAC

    2011-08-12

    We introduce field theory techniques through which the deconfinement transition of four-dimensional Yang-Mills theory can be moved to a semi-classical domain where it becomes calculable using two-dimensional field theory. We achieve this through a double-trace deformation of toroidally compactified Yang-Mills theory on R{sup 2} x S{sub L}{sup 1} x S{sub {beta}}{sup 1}. At large N, fixed-L, and arbitrary {beta}, the thermodynamics of the deformed theory is equivalent to that of ordinary Yang-Mills theory at leading order in the large N expansion. At fixed-N, small L and a range of {beta}, the deformed theory maps to a two-dimensional theory with electric and magnetic (order and disorder) perturbations, analogs of which appear in planar spin-systems and statistical physics. We show that in this regime the deconfinement transition is driven by the competition between electric and magnetic perturbations in this two-dimensional theory. This appears to support the scenario proposed by Liao and Shuryak regarding the magnetic component of the quark-gluon plasma at RHIC.

  10. INFOGRAPHIC: Wide Bandgap Semiconductors | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    INFOGRAPHIC: Wide Bandgap Semiconductors INFOGRAPHIC: Wide Bandgap Semiconductors January 21, 2014 - 12:44pm Addthis INFOGRAPHIC: Wide Bandgap Semiconductors MORE RESOURCES Watch the video on WBG semiconductors Read the Advanced Manufacturing Office fact sheet on WBG semiconductors Subscribe to Advanced Manufacturing Office news updates Learn about the Clean Energy Manufacturing Initiative For decades, power electronics - or tiny pieces of equipment such as inverters and rectifiers made of

  11. Design and Synthesis of Novel Diluted Magnetic Semiconductors...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Design and Synthesis of Novel Diluted Magnetic Semiconductors Diluted magnetic semiconductors (DMSs) are semiconductors doped with small amounts of magnetic active transition...

  12. Selenium semiconductor core optical fibers

    SciTech Connect (OSTI)

    Tang, G. W.; Qian, Q. Peng, K. L.; Wen, X.; Zhou, G. X.; Sun, M.; Chen, X. D.; Yang, Z. M.

    2015-02-15

    Phosphate glass-clad optical fibers containing selenium (Se) semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Such crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.

  13. Width of the Confining String in Yang-Mills Theory

    SciTech Connect (OSTI)

    Gliozzi, F.; Pepe, M.; Wiese, U.-J.

    2010-06-11

    We investigate the transverse fluctuations of the confining string connecting two static quarks in (2+1)D SU(2) Yang-Mills theory using Monte Carlo calculations. The exponentially suppressed signal is extracted from the large noise by a very efficient multilevel algorithm. The resulting width of the string increases logarithmically with the distance between the static quark charges. Corrections at intermediate distances due to universal higher-order terms in the effective string action are calculated analytically. They accurately fit the numerical data.

  14. Wide band gap semiconductor templates

    DOE Patents [OSTI]

    Arendt, Paul N.; Stan, Liliana; Jia, Quanxi; DePaula, Raymond F.; Usov, Igor O.

    2010-12-14

    The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

  15. Method of preparing nitrogen containing semiconductor material

    DOE Patents [OSTI]

    Barber, Greg D.; Kurtz, Sarah R.

    2004-09-07

    A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.

  16. Method and structure for passivating semiconductor material

    DOE Patents [OSTI]

    Pankove, Jacques I.

    1981-01-01

    A structure for passivating semiconductor material comprises a substrate of crystalline semiconductor material, a relatively thin film of carbon disposed on a surface of the crystalline material, and a layer of hydrogenated amorphous silicon deposited on the carbon film.

  17. ARM - Publications: Science Team Meeting Documents: A Climatology...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Dong, Xiquan University of North Dakota Baike Xi(a), Xiquan Dong(a), and Fanglin Yang(b) University of North Dakota (a), NOAA National Centers for Environmental...

  18. Semiconductor nanocrystal-based phagokinetic tracking

    DOE Patents [OSTI]

    Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

    2014-11-18

    Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

  19. Semiconductor Manufacturing International Corp SMIC | Open Energy...

    Open Energy Info (EERE)

    Manufacturing International Corp SMIC Jump to: navigation, search Name: Semiconductor Manufacturing International Corp (SMIC) Place: Shanghai, Shanghai Municipality, China Zip:...

  20. Semiconductor devices having a recessed electrode structure

    DOE Patents [OSTI]

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2015-05-26

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  1. Diode having trenches in a semiconductor region

    DOE Patents [OSTI]

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  2. Semiconductor electrode with improved photostability characteristics

    DOE Patents [OSTI]

    Frank, A.J.

    1985-02-19

    An electrode is described for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode consists of a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

  3. Semiconductor electrode with improved photostability characteristics

    DOE Patents [OSTI]

    Frank, Arthur J.

    1987-01-01

    An electrode is disclosed for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode includes a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

  4. Semiconductor assisted metal deposition for nanolithography applications

    SciTech Connect (OSTI)

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2001-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  5. Semiconductor assisted metal deposition for nanolithography applications

    SciTech Connect (OSTI)

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2002-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  6. Resurgence, operator product expansion, and remarks on renormalons in supersymmetric Yang-Mills theory

    SciTech Connect (OSTI)

    Shifman, M.

    2015-03-15

    We discuss similarities and differences between the resurgence program in quantum mechanics and the operator product expansion in strongly coupled Yang-Mills theories. In N = 1 super-Yang-Mills theories, renormalons are peculiar and are not quite similar to renormalons in QCD.

  7. An ancient Chinese wisdom for metabolic engineering: Yin-Yang

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wu, Stephen G.; He, Lian; Wang, Qingzhao; Tang, Yinjie J.

    2015-03-20

    In ancient Chinese philosophy, Yin-Yang describes two contrary forces that are interconnected and interdependent. This concept also holds true in microbial cell factories, where Yin represents energy metabolism in the form of ATP, and Yang represents carbon metabolism. Current biotechnology can effectively edit the microbial genome or introduce novel enzymes to redirect carbon fluxes. On the other hand, microbial metabolism loses significant free energy as heat when converting sugar into ATP; while maintenance energy expenditures further aggravate ATP shortage. The limitation of cell “powerhouse” prevents hosts from achieving high carbon yields and rates. Via an Escherichia coli flux balance analysismore » model, we further demonstrate the penalty of ATP cost on biofuel synthesis. To ensure cell powerhouse being sufficient in microbial cell factories, we propose five principles: 1. Take advantage of native pathways for product synthesis. 2. Pursue biosynthesis relying only on pathways or genetic parts without significant ATP burden. 3. Combine microbial production with chemical conversions (semi-biosynthesis) to reduce biosynthesis steps. 4. Create “minimal cells” or use non-model microbial hosts with higher energy fitness. 5. Develop a photosynthesis chassis that can utilize light energy and cheap carbon feedstocks. Meanwhile, metabolic flux analysis can be used to quantify both carbon and energy metabolisms. The fluxomics results are essential to evaluate the industrial potential of laboratory strains, avoiding false starts and dead ends during metabolic engineering« less

  8. An ancient Chinese wisdom for metabolic engineering: Yin-Yang

    SciTech Connect (OSTI)

    Wu, Stephen G.; He, Lian; Wang, Qingzhao; Tang, Yinjie J.

    2015-03-20

    In ancient Chinese philosophy, Yin-Yang describes two contrary forces that are interconnected and interdependent. This concept also holds true in microbial cell factories, where Yin represents energy metabolism in the form of ATP, and Yang represents carbon metabolism. Current biotechnology can effectively edit the microbial genome or introduce novel enzymes to redirect carbon fluxes. On the other hand, microbial metabolism loses significant free energy as heat when converting sugar into ATP; while maintenance energy expenditures further aggravate ATP shortage. The limitation of cell “powerhouse” prevents hosts from achieving high carbon yields and rates. Via an Escherichia coli flux balance analysis model, we further demonstrate the penalty of ATP cost on biofuel synthesis. To ensure cell powerhouse being sufficient in microbial cell factories, we propose five principles: 1. Take advantage of native pathways for product synthesis. 2. Pursue biosynthesis relying only on pathways or genetic parts without significant ATP burden. 3. Combine microbial production with chemical conversions (semi-biosynthesis) to reduce biosynthesis steps. 4. Create “minimal cells” or use non-model microbial hosts with higher energy fitness. 5. Develop a photosynthesis chassis that can utilize light energy and cheap carbon feedstocks. Meanwhile, metabolic flux analysis can be used to quantify both carbon and energy metabolisms. The fluxomics results are essential to evaluate the industrial potential of laboratory strains, avoiding false starts and dead ends during metabolic engineering

  9. Semiconductor-based optical refrigerator

    DOE Patents [OSTI]

    Epstein, Richard I.; Edwards, Bradley C.; Sheik-Bahae, Mansoor

    2002-01-01

    Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

  10. Mechanical scriber for semiconductor devices

    DOE Patents [OSTI]

    Lin, P.T.

    1985-03-05

    A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer. 5 figs.

  11. 2010 Defects in Semiconductors GRC

    SciTech Connect (OSTI)

    Shengbai Zhang

    2011-01-06

    Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, as well as an emphasis on the development of novel defect detection methods and first-principles defect theories. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference will deal with point and extended defects in a broad range of electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, oxides, sp{sup 2} carbon based-materials, and photovoltaic/solar cell materials, and in understanding important defect phenomena such as doping bottleneck in nanostructures and the diffusion of defects and impurities. The program consists of about twenty invited talks and a number of contributed poster sessions. The emphasis should be on work which has yet to be published. The large amount of discussion time provides an ideal forum for dealing with topics that are new and/or controversial.

  12. Mechanical scriber for semiconductor devices

    DOE Patents [OSTI]

    Lin, Peter T.

    1985-01-01

    A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer.

  13. Semiconductor films on flexible iridium substrates

    DOE Patents [OSTI]

    Goyal, Amit

    2005-03-29

    A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

  14. Controlled growth of semiconductor crystals

    DOE Patents [OSTI]

    Bourret-Courchesne, E.D.

    1992-07-21

    A method is disclosed for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B[sub x]O[sub y] are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T[sub m1] of the oxide of boron (T[sub m1]=723 K for boron oxide B[sub 2]O[sub 3]), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T[sub m2] of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm[sup 2]. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 [mu]m. 7 figs.

  15. Controlled growth of semiconductor crystals

    DOE Patents [OSTI]

    Bourret-Courchesne, Edith D.

    1992-01-01

    A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

  16. Back-side readout semiconductor photomultiplier

    DOE Patents [OSTI]

    Choong, Woon-Seng; Holland, Stephen E

    2014-05-20

    This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region.

  17. NREL: Energy Analysis - Changgui Dong

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Lawrence Berkeley National Laboratory, Berkeley, California (2012-2014) Graduate Research Assistant, University of Texas at Austin, Austin, TX (2009-2014) Other...

  18. Compound semiconductor optical waveguide switch

    DOE Patents [OSTI]

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  19. Etching Of Semiconductor Wafer Edges

    DOE Patents [OSTI]

    Kardauskas, Michael J. (Billerica, MA); Piwczyk, Bernhard P. (Dunbarton, NH)

    2003-12-09

    A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.

  20. Stretchable semiconductor elements and stretchable electrical circuits

    DOE Patents [OSTI]

    Rogers, John A.; Khang, Dahl-Young; Menard, Etienne

    2009-07-07

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  1. Optical Furnace offers improved semiconductor device processing

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    capabilities - Energy Innovation Portal Optical Furnace offers improved semiconductor device processing capabilities Award winning solar manufacturing process National Renewable Energy Laboratory Contact NREL About This Technology <p> <em>The highly versatile optical furnace provides semiconductor manufacturers with energy efficient methods to process devices in a high throughput capacity. &nbsp;</em></p> The highly versatile optical furnace provides semiconductor

  2. Optical devices featuring textured semiconductor layers

    DOE Patents [OSTI]

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2011-10-11

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  3. Optical devices featuring textured semiconductor layers

    DOE Patents [OSTI]

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2012-08-07

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  4. Radiating black holes in Einstein-Yang-Mills theory and cosmic censorship

    SciTech Connect (OSTI)

    Ghosh, Sushant G.; Dadhich, Naresh

    2010-08-15

    Exact nonstatic spherically symmetric black-hole solutions of the higher dimensional Einstein-Yang-Mills equations for a null dust with Yang-Mills gauge charge are obtained by employing Wu-Yang ansatz, namely, HD-EYM Vaidya solution. It is interesting to note that gravitational contribution of Yang-Mills (YM) gauge charge for this ansatz is indeed opposite (attractive rather than repulsive) that of Maxwell charge. It turns out that the gravitational collapse of null dust with YM gauge charge admits strong curvature shell focusing naked singularities violating cosmic censorship. However, there is significant shrinkage of the initial data space for a naked singularity of the HD-Vaidya collapse due to presence of YM gauge charge. The effect of YM gauge charge on structure and location of the apparent and event horizons is also discussed.

  5. Peidong Yang, 2014 | U.S. DOE Office of Science (SC)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Peidong Yang, 2014 The Ernest Orlando Lawrence Award Lawrence Award Home Nomination & Selection Guidelines Award Laureates 2010's 2000's 1990's 1980's 1970's 1960's Ceremony The...

  6. Microsoft PowerPoint - Yang_2015_StaffScienceHighlight_JACS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Based on Large Single Crystalline Grains and Vertical Bulk Heterojunctions" B. Yang 1 , O. Dyck 2 , J. Poplawsky 1 , J. Keum 1 , A. Puretzky 1 , S. Das 3 , I. N. Ivanov 1...

  7. Solar Semiconductor Pvt Ltd | Open Energy Information

    Open Energy Info (EERE)

    navigation, search Name: Solar Semiconductor Pvt Ltd Place: Hyderabad, Andhra Pradesh, India Zip: 500034 AP Product: Manufacturer of PV modules in Hyderabad, India. Also has an...

  8. Opportunities for Wide Bandgap Semiconductor Power Electronics...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell ... kgd H2 produced) Fuel Cell System Cost Transportation projected to (500,000 ...

  9. Wafer-fused semiconductor radiation detector

    DOE Patents [OSTI]

    Lee, Edwin Y.; James, Ralph B.

    2002-01-01

    Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

  10. Reflection technique for thermal mapping of semiconductors

    DOE Patents [OSTI]

    Walter, Martin J.

    1989-06-20

    Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

  11. Freescale Semiconductor Successfully Implements an Energy Management...

    Broader source: Energy.gov (indexed) [DOE]

    Freescale Semiconductor Successfully Implements an Energy Management System The Superior Energy ... adjusting a fow controller and storage that were not being used to the ...

  12. Gaining creative control over semiconductor nanowires

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Los Alamos research team has transformed the synthesis process of semiconductor nanowires for use in solar cells, batteries, electronics, sensors and photonics using a ...

  13. Freescale Semiconductor Successfully Implements an Energy Management...

    Energy Savers [EERE]

    This case study describes how Freescale Semiconductor implemented projects at its Oak Hill Fab plant in Austin, Texas, that reduced annual plant-wide energy consumption by 28 ...

  14. Earth-abundant semiconductors for photovoltaic applications ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Earth-abundant semiconductors for photovoltaic applications Thin film photovoltaics (solar cells) has the potential to revolutionize our energy landscape by producing clean,...

  15. Gaining creative control over semiconductor nanowires

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Gaining creative control over semiconductor nanowires Using a microfluidic reactor, Los ... Using a microfluidic reactor, Los Alamos researchers transformed the SLS process into a ...

  16. Stangl Semiconductor Equipment AG | Open Energy Information

    Open Energy Info (EERE)

    German manufacturer of wet chemistry systems for processing silicon and thin-film solar cells. References: Stangl Semiconductor Equipment AG1 This article is a stub. You...

  17. Semiconductor nanocrystal probes for biological applications...

    Office of Scientific and Technical Information (OSTI)

    being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor...

  18. Semiconductor Equipment and Materials International SEMI | Open...

    Open Energy Info (EERE)

    search Name: Semiconductor Equipment and Materials International (SEMI) Place: San Jose, California Zip: 95134 2127 Product: Global trade association, publisher and conference...

  19. Electric Drive Semiconductor Manufacturing (EDSM) Center | Department...

    Broader source: Energy.gov (indexed) [DOE]

    and Vehicle Technologies Program Annual Merit Review and Peer Evaluation arravt030apesmith2011p.pdf (331.83 KB) More Documents & Publications Electric Drive Semiconductor ...

  20. Optic probe for semiconductor characterization

    DOE Patents [OSTI]

    Sopori, Bhushan L.; Hambarian, Artak

    2008-09-02

    Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

  1. Processing of insulators and semiconductors

    SciTech Connect (OSTI)

    Quick, Nathaniel R.; Joshi, Pooran C.; Duty, Chad Edward; Jellison, Jr., Gerald Earle; Angelini, Joseph Attilio

    2015-06-16

    A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.

  2. Hybrid anode for semiconductor radiation detectors

    SciTech Connect (OSTI)

    Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

    2013-11-19

    The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

  3. Stable surface passivation process for compound semiconductors

    DOE Patents [OSTI]

    Ashby, Carol I. H.

    2001-01-01

    A passivation process for a previously sulfided, selenided or tellurated III-V compound semiconductor surface. The concentration of undesired mid-gap surface states on a compound semiconductor surface is reduced by the formation of a near-monolayer of metal-(sulfur and/or selenium and/or tellurium)-semiconductor that is effective for long term passivation of the underlying semiconductor surface. Starting with the III-V compound semiconductor surface, any oxidation present thereon is substantially removed and the surface is then treated with sulfur, selenium or tellurium to form a near-monolayer of chalcogen-semiconductor of the surface in an oxygen-free atmosphere. This chalcogenated surface is then contacted with a solution of a metal that will form a low solubility chalcogenide to form a near-monolayer of metal-chalcogen-semiconductor. The resulting passivating layer provides long term protection for the underlying surface at or above the level achieved by a freshly chalcogenated compound semiconductor surface in an oxygen free atmosphere.

  4. Semiconductor liquid-junction solar cell

    SciTech Connect (OSTI)

    Parkinson, B.A.

    1982-10-29

    A semiconductor liquid junction photocell in which the photocell is in the configuration of a light concentrator and in which the electrolytic solution both conducts current and facilitates the concentration of incident solar radiation onto the semiconductor. The photocell may be in the configuration of a non-imaging concentrator such as a compound parabolic concentrator, or an imaging concentrator such as a lens.

  5. Preparation of a semiconductor thin film

    DOE Patents [OSTI]

    Pehnt, Martin; Schulz, Douglas L.; Curtis, Calvin J.; Ginley, David S.

    1998-01-01

    A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

  6. Preparation of a semiconductor thin film

    DOE Patents [OSTI]

    Pehnt, M.; Schulz, D.L.; Curtis, C.J.; Ginley, D.S.

    1998-01-27

    A process is disclosed for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

  7. Semiconductor switch geometry with electric field shaping

    DOE Patents [OSTI]

    Booth, Rex; Pocha, Michael D.

    1994-01-01

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

  8. Semiconductor switch geometry with electric field shaping

    DOE Patents [OSTI]

    Booth, R.; Pocha, M.D.

    1994-08-23

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium. 10 figs.

  9. Bowing of the defect formation energy in semiconductor alloys...

    Office of Scientific and Technical Information (OSTI)

    Bowing of the defect formation energy in semiconductor alloys Prev Next Title: Bowing of the defect formation energy in semiconductor alloys Authors: Ma, Jie ; Wei, Su-Huai ...

  10. Charge carrier coherence and Hall effect in organic semiconductors...

    Office of Scientific and Technical Information (OSTI)

    Charge carrier coherence and Hall effect in organic semiconductors Citation Details In-Document Search Title: Charge carrier coherence and Hall effect in organic semiconductors ...

  11. Varian Semiconductor Equipment Associates Inc VSEA | Open Energy...

    Open Energy Info (EERE)

    Varian Semiconductor Equipment Associates Inc VSEA Jump to: navigation, search Name: Varian Semiconductor Equipment Associates Inc (VSEA) Place: Gloucester, Massachusetts Zip: 1930...

  12. Tianjin Zhonghuan Semiconductor Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Tianjin Municipality, China Zip: 300384 Product: China-based manufacturer of discrete semiconductor devices. References: Tianjin Zhonghuan Semiconductor Co Ltd1 This article...

  13. Manipulating single electrons in semiconductor devices for quantum...

    Office of Scientific and Technical Information (OSTI)

    Manipulating single electrons in semiconductor devices for quantum computing. Citation Details In-Document Search Title: Manipulating single electrons in semiconductor devices for ...

  14. Engineering Density of States of Earth Abundant Semiconductors...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Density of States of Earth Abundant Semiconductors for Enhanced Thermoelectric Power Factor Engineering Density of States of Earth Abundant Semiconductors for Enhanced ...

  15. Semiconductor and Materials Company Inc SAMCO | Open Energy Informatio...

    Open Energy Info (EERE)

    search Name: Semiconductor and Materials Company Inc (SAMCO) Place: Kyoto, Kyoto, Japan Zip: 612-8443 Sector: Solar Product: Japanese manufactruer of semiconductor and solar...

  16. Tianjin HuanOu Semiconductor Material Technology Co Ltd | Open...

    Open Energy Info (EERE)

    HuanOu Semiconductor Material Technology Co Ltd Jump to: navigation, search Name: Tianjin HuanOu Semiconductor Material Technology Co Ltd Place: Tianjin, Tianjin Municipality,...

  17. Zhongsheng Semiconductor Silicon Material Co Ltd | Open Energy...

    Open Energy Info (EERE)

    Zhongsheng Semiconductor Silicon Material Co Ltd Jump to: navigation, search Name: Zhongsheng Semiconductor Silicon Material Co Ltd Place: Linzhou, Henan Province, China Product:...

  18. Emergence of the Persistent Spin Helix in Semiconductor Quantum...

    Office of Scientific and Technical Information (OSTI)

    Emergence of the Persistent Spin Helix in Semiconductor Quantum Wells Citation Details In-Document Search Title: Emergence of the Persistent Spin Helix in Semiconductor Quantum ...

  19. Kyungdong Photovoltaic Energy Corp KPE formerly Photon Semiconductor...

    Open Energy Info (EERE)

    formerly Photon Semiconductor Energy Jump to: navigation, search Name: Kyungdong Photovoltaic Energy Corp (KPE) (formerly Photon Semiconductor & Energy) Place: Changwon, South...

  20. GRINM Semiconductor Materials Co Ltd Gritek | Open Energy Information

    Open Energy Info (EERE)

    GRINM Semiconductor Materials Co Ltd Gritek Jump to: navigation, search Name: GRINM Semiconductor Materials Co Ltd (Gritek) Place: Beijing Municipality, China Zip: 100088 Product:...

  1. Jiangxi Jingde Semiconductor Materials Co Ltd | Open Energy Informatio...

    Open Energy Info (EERE)

    Jingde Semiconductor Materials Co Ltd Jump to: navigation, search Name: Jiangxi Jingde Semiconductor Materials Co Ltd Place: Jingdezhen, Jiangxi Province, China Product: A Chinese...

  2. Phosphorous doping a semiconductor particle

    DOE Patents [OSTI]

    Stevens, Gary Don; Reynolds, Jeffrey Scott

    1999-07-20

    A method (10) of phosphorus doping a semiconductor particle using ammonium phosphate. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried (16, 18), with the phosphorus then being diffused (20) into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement.

  3. Boron doping a semiconductor particle

    DOE Patents [OSTI]

    Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

    1998-06-09

    A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

  4. Boron doping a semiconductor particle

    DOE Patents [OSTI]

    Stevens, G.D.; Reynolds, J.S.; Brown, L.K.

    1998-06-09

    A method of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried, with the boron film then being driven into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out into piles and melted/fused with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements. 2 figs.

  5. Heating device for semiconductor wafers

    DOE Patents [OSTI]

    Vosen, Steven R.

    1999-01-01

    An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernable pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

  6. Heating device for semiconductor wafers

    DOE Patents [OSTI]

    Vosen, S.R.

    1999-07-27

    An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernible pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light. 4 figs.

  7. Phosphorus doping a semiconductor particle

    DOE Patents [OSTI]

    Stevens, G.D.; Reynolds, J.S.

    1999-07-20

    A method of phosphorus doping a semiconductor particle using ammonium phosphate is disclosed. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried with the phosphorus then being diffused into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement. 1 fig.

  8. Electronegativity estimation of electronic polarizabilities of semiconductors

    SciTech Connect (OSTI)

    Li, Keyan [State Key Laboratory of Fine Chemicals, Department of Materials Science and Chemical Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116012 (China)] [State Key Laboratory of Fine Chemicals, Department of Materials Science and Chemical Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116012 (China); Xue, Dongfeng, E-mail: dfxue@chem.dlut.edu.cn [State Key Laboratory of Fine Chemicals, Department of Materials Science and Chemical Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116012 (China)] [State Key Laboratory of Fine Chemicals, Department of Materials Science and Chemical Engineering, School of Chemical Engineering, Dalian University of Technology, Dalian 116012 (China)

    2010-03-15

    On the basis of the viewpoint of structure-property relationship in solid state matters, we proposed some useful relations to quantitatively calculate the electronic polarizabilities of binary and ternary chalcopyrite semiconductors, by using electronegativity and principal quantum number. The calculated electronic polarizabilities are in good agreement with reported values in the literature. Both electronegativity and principal quantum number can effectively reflect the detailed chemical bonding behaviors of constituent atoms in these semiconductors, which determines the magnitude of their electronic polarizabilities. The present work provides a useful guide to compositionally design novel semiconductor materials, and further explore advanced electro-optic devices.

  9. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    DOE Patents [OSTI]

    Yang, Peidong; Choi, Heonjin; Lee, Sangkwon; He, Rongrui; Zhang, Yanfeng; Kuykendal, Tevye; Pauzauskie, Peter

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  10. Wide-Bandgap Compound Semiconductors to Enable Novel Semiconductor Devices

    SciTech Connect (OSTI)

    Crawford, M.H.; Chow, W.W.; Wright, A.F.; Lee, S.R.; Jones, E.D.; Han, J.; Shul, R.J.

    1999-04-01

    This report represents the completion of a three-year Laboratory-Directed Research and Development (LDRD) program that focused on research and development of GaN-based wide bandgap semiconductor materials (referred to as III-N materials). Our theoretical investigations include the determination of fundamental materials parameters from first-principles calculations, the study of gain properties of III-N heterostructures using a microscopic laser theory and density-functional-theory, charge-state calculations to determine the core structure and energy levels of dislocations in III-N materials. Our experimental investigations include time-resolved photoluminescence and magneto-luminescence studies of GaN epilayers and multiquantum well samples as well as x-ray diffraction studies of AlGaN ternary alloys. In addition, we performed a number of experiments to determine how various materials processing steps affect both the optical and electrical properties of GaN-based materials. These studies include photoluminescence studies of GaN epilayers after post-growth rapid thermal annealing, ion implantation to produce n- and p-type material and electrical and optical studies of plasma-etched structures.

  11. A Spintronic Semiconductor with Selectable Charge Carriers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or...

  12. Semiconductor-nanocrystal/conjugated polymer thin films

    DOE Patents [OSTI]

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2010-08-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  13. Narrow band gap amorphous silicon semiconductors

    DOE Patents [OSTI]

    Madan, A.; Mahan, A.H.

    1985-01-10

    Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

  14. Opportunities for Wide Bandgap Semiconductor Power Electronics...

    Broader source: Energy.gov (indexed) [DOE]

    Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications" held on October 21, 2014. ... Vehicle Technologies Office Merit Review 2016: Advanced Low-Cost SiC and GaN Wide ...

  15. Semiconductor-nanocrystal/conjugated polymer thin films

    DOE Patents [OSTI]

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  16. Library Analog Semiconductor Devices SPICE Simulators

    Energy Science and Technology Software Center (OSTI)

    1996-07-23

    SPICE-SANDIA.LIB is a library of parameter sets and macromodels of semiconductor devices. They are used with Spice-based (SPICE is a program for electronic circuit analysis) simulators to simulate electronic circuits.

  17. Sandia Wide-Bandgap Semiconductor Workshop

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... In response to increased interest in wide-bandgap (WBG) semiconductor projects by DOE, on October 30, 2012, Sandia hosted a one-day brain-storming workshop aimed at identifying the ...

  18. Thermovoltaic semiconductor device including a plasma filter

    DOE Patents [OSTI]

    Baldasaro, Paul F.

    1999-01-01

    A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

  19. Optical devices featuring nonpolar textured semiconductor layers

    DOE Patents [OSTI]

    Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

    2013-11-26

    A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

  20. A Spintronic Semiconductor with Selectable Charge Carriers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Spintronic Semiconductor with Selectable Charge Carriers A Spintronic Semiconductor with Selectable Charge Carriers Print Wednesday, 28 August 2013 00:00 Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of

  1. Optical temperature indicator using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, J.W.

    1995-01-01

    A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

  2. Optical temperature indicator using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, James W.

    1996-01-01

    A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

  3. Optical temperature sensor using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, J.W.

    1998-06-30

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card. 8 figs.

  4. Optical temperature sensor using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, James W.

    1996-01-01

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit.

  5. Optical temperature sensor using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, J.W.

    1996-08-20

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit. 7 figs.

  6. Optical temperature sensor using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, James W.

    1998-01-01

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card.

  7. Anomalous Charge Transport in Disordered Organic Semiconductors

    SciTech Connect (OSTI)

    Muniandy, S. V.; Woon, K. L.; Choo, K. Y.

    2011-03-30

    Anomalous charge carrier transport in disordered organic semiconductors is studied using fractional differential equations. The connection between index of fractional derivative and dispersion exponent is examined from the perspective of fractional Fokker-Planck equation and its link to the continuous time random walk formalism. The fractional model is used to describe the bi-scaling power-laws observed in the time-of flight photo-current transient data for two different types of organic semiconductors.

  8. Photoelectrochemistry of Semiconductor Nanowire Arrays

    SciTech Connect (OSTI)

    Mallouk, Thomas E; Redwing, Joan M

    2009-11-10

    This project supported research on the growth and photoelectrochemical characterization of semiconductor nanowire arrays, and on the development of catalytic materials for visible light water splitting to produce hydrogen and oxygen. Silicon nanowires were grown in the pores of anodic aluminum oxide films by the vapor-liquid-solid technique and were characterized electrochemically. Because adventitious doping from the membrane led to high dark currents, silicon nanowire arrays were then grown on silicon substrates. The dependence of the dark current and photovoltage on preparation techniques, wire diameter, and defect density was studied for both p-silicon and p-indium phosphide nanowire arrays. The open circuit photovoltage of liquid junction cells increased with increasing wire diameter, reaching 350 mV for micron-diameter silicon wires. Liquid junction and radial p-n junction solar cells were fabricated from silicon nano- and microwire arrays and tested. Iridium oxide cluster catalysts stabilized by bidentate malonate and succinate ligands were also made and studied for the water oxidation reaction. Highlights of this project included the first papers on silicon and indium phosphide nanowire solar cells, and a new procedure for making ligand-stabilized water oxidation catalysts that can be covalently linked to molecular photosensitizers or electrode surfaces.

  9. Spin Transport in Semiconductor heterostructures

    SciTech Connect (OSTI)

    Domnita Catalina Marinescu

    2011-02-22

    The focus of the research performed under this grant has been the investigation of spin transport in magnetic semiconductor heterostructures. The interest in these systems is motivated both by their intriguing physical properties, as the physical embodiment of a spin-polarized Fermi liquid, as well as by their potential applications as spintronics devices. In our work we have analyzed several different problems that affect the spin dynamics in single and bi-layer spin-polarized two-dimensional (2D) systems. The topics of interests ranged from the fundamental aspects of the electron-electron interactions, to collective spin and charge density excitations and spin transport in the presence of the spin-orbit coupling. The common denominator of these subjects is the impact at the macroscopic scale of the spin-dependent electron-electron interaction, which plays a much more subtle role than in unpolarized electron systems. Our calculations of several measurable parameters, such as the excitation frequencies of magneto-plasma modes, the spin mass, and the spin transresistivity, propose realistic theoretical estimates of the opposite-spin many-body effects, in particular opposite-spin correlations, that can be directly connected with experimental measurements.

  10. Electron gas grid semiconductor radiation detectors

    DOE Patents [OSTI]

    Lee, Edwin Y.; James, Ralph B.

    2002-01-01

    An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

  11. Wide Bandgap Semiconductors: Pursuing the Promise | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Wide Bandgap Semiconductors: Pursuing the Promise Wide Bandgap Semiconductors: Pursuing the Promise Wide bandgap semiconductor materials are more efficient than their silicon-based counterparts; making it possible to reduce weight, volume, and life-cycle costs in a wide range of power applications. Wide Bandgap Semiconductors: Pursuing the Promise (1.37 MB) More Documents & Publications Wide Bandgap Semiconductors for Clean Energy Workshop Vehicle Technologies Office Merit Review 2015:

  12. Analyzes Data from Semiconductor Wafers

    Energy Science and Technology Software Center (OSTI)

    2002-07-23

    This program analyzes reflectance data from semiconductor wafers taken during the deposition or evolution of a thin film, typically via chemical vapor deposition (CVD) or molecular beam epitaxy (MBE). It is used to determine the growth rate and optical constants of the deposited thin films using a virtual interface concept. Growth rates and optical constants of multiple-layer structures is possible by selecting appropriate sections in the reflectance vs time waveform. No prior information or estimatesmore » of growth rates and materials properties is required if an absolute reflectance waveform is used. If the optical constants of a thin film are known, then the growth rate may be extracted from a relative reflectance data set. The analysis is valid for either s or p polarized light at any incidence angle and wavelength. The analysis package is contained within an easy-to-use graphical user interface. The program is based on the algorighm described in the following two publications: W.G. Breiland and K.P. Killen, J. Appl. Phys. 78 (1995) 6726, and W. G. Breiland, H.Q. Hou, B.E. Hammons, and J.F. Klem, Proc. XXVIII SOTAPOCS Symp. Electrochem. Soc. San Diego, May 3-8, 1998. It relies on the fact that any multiple-layer system has a reflectance spectrum that is mathematically equivalent to a single-layer thin film on a virtual substrate. The program fits the thin film reflectance with five adjustable parameters: 1) growth rate, 2) real part of complex refractive index, 3) imaginary part of refractive index, 4) amplitude of virtual interface reflectance, 5) phase of virtual interface reflectance.« less

  13. Light sources based on semiconductor current filaments

    DOE Patents [OSTI]

    Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

    2003-01-01

    The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

  14. Extracting hot carriers from photoexcited semiconductor nanocrystals

    SciTech Connect (OSTI)

    Zhu, Xiaoyang

    2014-12-10

    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  15. Method for removing semiconductor layers from salt substrates

    DOE Patents [OSTI]

    Shuskus, Alexander J.; Cowher, Melvyn E.

    1985-08-27

    A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.

  16. Moment enhancement in dilute magnetic semiconductors: MnxSi1...

    Office of Scientific and Technical Information (OSTI)

    Authors: Shaughnessy, M ; Fong, C Y ; Snow, R ; Liu, K ; Pask, J E ; Yang, L H Publication Date: 2009-03-12 OSTI Identifier: 965070 Report Number(s): LLNL-JRNL-411279 Journal ID: ...

  17. Semimetal/Semiconductor Nanocomposites for Thermoelectrics

    SciTech Connect (OSTI)

    Lu, Hong; Burke, Peter G.; Gossard, Arthur C.; Zeng, Gehong; Ramu, Ashok T.; Bahk, Je-Hyeong; Bowers, John E.

    2011-04-15

    In this work, we present research on semimetal-semiconductor nanocomposites grown by molecular beam epitaxy (MBE) for thermoelectric applications. We study several different III-V semiconductors embedded with semimetallic rare earth-group V (RE-V) compounds, but focus is given here to ErSb:InxGa1-xSb as a promising p-type thermoelectric material. Nanostructures of RE-V compounds are formed and embedded within the III-V semiconductor matrix. By codoping the nanocomposites with the appropriate dopants, both n-type and p-type materials have been made for thermoelectric applications. The thermoelectric properties have been engineered for enhanced thermoelectric device performance. Segmented thermoelectric power generator modules using 50 ?m thick Er-containing nanocomposites have been fabricated and measured. Research on different rare earth elements for thermoelectrics is discussed.

  18. Substrate solder barriers for semiconductor epilayer growth

    DOE Patents [OSTI]

    Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

    1987-10-23

    During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In molecular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating. 1 tab.

  19. Substrate solder barriers for semiconductor epilayer growth

    DOE Patents [OSTI]

    Drummond, Timothy J.; Ginley, David S.; Zipperian, Thomas E.

    1989-01-01

    During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

  20. Substrate solder barriers for semiconductor epilayer growth

    DOE Patents [OSTI]

    Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

    1989-05-09

    During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

  1. Support apparatus for semiconductor wafer processing

    DOE Patents [OSTI]

    Griffiths, Stewart K.; Nilson, Robert H.; Torres, Kenneth J.

    2003-06-10

    A support apparatus for minimizing gravitational stress in semiconductor wafers, and particularly silicon wafers, during thermal processing. The support apparatus comprises two concentric circular support structures disposed on a common support fixture. The two concentric circular support structures, located generally at between 10 and 70% and 70 and 100% and preferably at 35 and 82.3% of the semiconductor wafer radius, can be either solid rings or a plurality of spaced support points spaced apart from each other in a substantially uniform manner. Further, the support structures can have segments removed to facilitate wafer loading and unloading. In order to withstand the elevated temperatures encountered during semiconductor wafer processing, the support apparatus, including the concentric circular support structures and support fixture can be fabricated from refractory materials, such as silicon carbide, quartz and graphite. The claimed wafer support apparatus can be readily adapted for use in either batch or single-wafer processors.

  2. Codoped direct-gap semiconductor scintillators

    DOE Patents [OSTI]

    Derenzo, Stephen E.; Bourret-Courchesne, Edith; Weber, Marvin J.; Klintenberg, Mattias K.

    2006-05-23

    Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

  3. Codoped direct-gap semiconductor scintillators

    DOE Patents [OSTI]

    Derenzo, Stephen Edward; Bourret-Courchesne, Edith; Weber, Marvin J.; Klintenberg, Mattias K.

    2008-07-29

    Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

  4. Dry etching method for compound semiconductors

    DOE Patents [OSTI]

    Shul, R.J.; Constantine, C.

    1997-04-29

    A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

  5. Dry etching method for compound semiconductors

    DOE Patents [OSTI]

    Shul, Randy J.; Constantine, Christopher

    1997-01-01

    A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

  6. Silicon Carbide Semiconductors | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Silicon Carbide Power Semiconductor Devices in the Cleanroom Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Silicon Carbide Power Semiconductor Devices in the Cleanroom Ron Olson 2012.10.04 I would like to introduce Zach Stum, the Wide Band Gap device engineer who is leading the "Next Generation SiC MOSFET"

  7. Surface passivation process of compound semiconductor material using UV photosulfidation

    DOE Patents [OSTI]

    Ashby, Carol I. H.

    1995-01-01

    A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

  8. Progress in semiconductor laser diodes: SPIE volume 723

    SciTech Connect (OSTI)

    Eichen, E.

    1987-01-01

    This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes.

  9. Moment enhancement in dilute magnetic semiconductors: MnxSi1...

    Office of Scientific and Technical Information (OSTI)

    Moment enhancement in dilute magnetic semiconductors: MnxSi1-x with x 0.1% Citation Details In-Document Search Title: Moment enhancement in dilute magnetic semiconductors: ...

  10. Sandia National Labs: PCNSC: Departments: Semiconductor and Optical

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sciences Semiconductor & Optical Sciences > Semiconductor Material & Device Sciences > Advanced Materials Sciences > Lasers, Optics & Remote Sensing Energy Sciences Small Science Cluster Business Office News Partnering Research Jeff Nelson Jerry A. Simmons Sr. Manager Idabelle Idabelle Courtney Admin. Asst. Departments Semiconductor and Optical Sciences The Semiconductor and Optical Sciences Department oversees the operations of the following departments providing new

  11. Sandia National Labs: PCNSC: Research: Compound Semiconductor Science and

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technology Compound Semiconductor Science and Technology Thrust The Physical, Chemical, and Nano Sciences Center's vision for Compound Semiconductors is to develop the science of compound semiconductors that will enable us to invent integrated nano-technologies for the microsystems of the future. We will achieve this by advancing the frontiers of semiconductor research in areas such as quantum phenomena, defect physics, materials and device modeling, heteroepitaxy, and by discovering new

  12. Wide Bandgap Semiconductors for Clean Energy Workshop | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Workshops » Wide Bandgap Semiconductors for Clean Energy Workshop Wide Bandgap Semiconductors for Clean Energy Workshop July 25, 2012 A workshop on Wide Bandgap (WBG) Semiconductors for Clean Energy (held July 25, 2012, in Chicago, Illinois) brought together stakeholders from industry and academia to discuss the technical status of WBG semiconductors. The workshop also explored emerging WBG market applications in clean energy and barriers to the development and widespread commercial

  13. Preparation of III-V semiconductor nanocrystals

    DOE Patents [OSTI]

    Alivisatos, A.P.; Olshavsky, M.A.

    1996-04-09

    Nanometer-scale crystals of III-V semiconductors are disclosed. They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline. 4 figs.

  14. Preparation of III-V semiconductor nanocrystals

    DOE Patents [OSTI]

    Alivisatos, A. Paul; Olshavsky, Michael A.

    1996-01-01

    Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.

  15. High resolution scintillation detector with semiconductor readout

    DOE Patents [OSTI]

    Levin, Craig S.; Hoffman, Edward J.

    2000-01-01

    A novel high resolution scintillation detector array for use in radiation imaging such as high resolution Positron Emission Tomography (PET) which comprises one or more parallelepiped crystals with at least one long surface of each crystal being in intimate contact with a semiconductor photodetector such that photons generated within each crystal by gamma radiation passing therethrough is detected by the photodetector paired therewith.

  16. Semiconductor diode with external field modulation

    DOE Patents [OSTI]

    Nasby, Robert D.

    2000-01-01

    A non-destructive-readout nonvolatile semiconductor diode switching device that may be used as a memory element is disclosed. The diode switching device is formed with a ferroelectric material disposed above a rectifying junction to control the conduction characteristics therein by means of a remanent polarization. The invention may be used for the formation of integrated circuit memories for the storage of information.

  17. Semiconductor laser with multiple lasing wavelengths

    DOE Patents [OSTI]

    Fischer, Arthur J.; Choquette, Kent D.; Chow, Weng W.

    2003-07-29

    A new class of multi-terminal vertical-cavity semiconductor laser components has been developed. These multi-terminal laser components can be switched, either electrically or optically, between distinct lasing wavelengths, or can be made to lase simultaneously at multiple wavelengths.

  18. Organic conductive films for semiconductor electrodes

    DOE Patents [OSTI]

    Frank, A.J.

    1984-01-01

    According to the present invention, improved electrodes overcoated with conductive polymer films and preselected catalysts are provided. The electrodes typically comprise an inorganic semiconductor over-coated with a charge conductive polymer film comprising a charge conductive polymer in or on which is a catalyst or charge-relaying agent.

  19. Optical temperature sensor using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, J.W.

    1994-01-01

    Optical thermometry is a growing technological field which exploits the ability of certain materials to change their optical properties with temperature. A subclass of such materials are those which change their color as a reversible and reproducible function of temperature. These materials are thermochromic. This invention is a composition to measure temperature utilizing thermochromic semiconductors.

  20. Organic conductive films for semiconductor electrodes

    DOE Patents [OSTI]

    Frank, Arthur J.

    1984-01-01

    According to the present invention, improved electrodes overcoated with conductive polymer films and preselected catalysts are provided. The electrodes typically comprise an inorganic semiconductor overcoated with a charge conductive polymer film comprising a charge conductive polymer in or on which is a catalyst or charge-relaying agent.

  1. Semiconductor liquid crystal composition and methods for making the same

    DOE Patents [OSTI]

    Alivisatos, A. Paul; Li, Liang-shi

    2005-04-26

    Semiconductor liquid crystal compositions and methods for making such compositions are disclosed. One embodiment of the invention is directed to a liquid crystal composition including a solvent and semiconductor particles in the solvent. The solvent and the semiconductor particles are in an effective amount in the liquid crystal composition to form a liquid crystal phase.

  2. Method of physical vapor deposition of metal oxides on semiconductors

    DOE Patents [OSTI]

    Norton, David P.

    2001-01-01

    A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

  3. Using CrayPat Woo-Sun Yang NERSC User Services Group NUG Training

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    CrayPat Woo-Sun Yang NERSC User Services Group NUG Training February 1-2, 2012 NERSC Oakland Scientific Facility Introduction to CrayPat * Two types of collecting code performance data - Sampling * Typically, sampling program counters (locations in the code) at specified time intervals * A few different variants exist in sampling methods * Can see how much time was spent in each function - Tracing * Focus placed on individual functions * Records performance data on entry to and exit from

  4. Topologically massive Yang-Mills: A Hamilton-Jacobi constraint analysis

    SciTech Connect (OSTI)

    Bertin, M. C.; Pimentel, B. M.; Valcrcel, C. E.; Zambrano, G. E. R.

    2014-04-15

    We analyse the constraint structure of the topologically massive Yang-Mills theory in instant-form and null-plane dynamics via the Hamilton-Jacobi formalism. The complete set of hamiltonians that generates the dynamics of the system is obtained from the Frobenius integrability conditions, as well as its characteristic equations. As generators of canonical transformations, the hamiltonians are naturally linked to the generator of Lagrangian gauge transformations.

  5. Multiscale Monte Carlo equilibration: Pure Yang-Mills theory

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Endres, Michael G.; Brower, Richard C.; Orginos, Kostas; Detmold, William; Pochinsky, Andrew V.

    2015-12-29

    In this study, we present a multiscale thermalization algorithm for lattice gauge theory, which enables efficient parallel generation of uncorrelated gauge field configurations. The algorithm combines standard Monte Carlo techniques with ideas drawn from real space renormalization group and multigrid methods. We demonstrate the viability of the algorithm for pure Yang-Mills gauge theory for both heat bath and hybrid Monte Carlo evolution, and show that it ameliorates the problem of topological freezing up to controllable lattice spacing artifacts.

  6. An instability of hyperbolic space under the Yang-Mills flow

    SciTech Connect (OSTI)

    Gegenberg, Jack; Day, Andrew C.; Liu, Haitao; Seahra, Sanjeev S.

    2014-04-15

    We consider the Yang-Mills flow on hyperbolic 3-space. The gauge connection is constructed from the frame-field and (not necessarily compatible) spin connection components. The fixed points of this flow include zero Yang-Mills curvature configurations, for which the spin connection has zero torsion and the associated Riemannian geometry is one of constant curvature. We analytically solve the linearized flow equations for a large class of perturbations to the fixed point corresponding to hyperbolic 3-space. These can be expressed as a linear superposition of distinct modes, some of which are exponentially growing along the flow. The growing modes imply the divergence of the (gauge invariant) perturbative torsion for a wide class of initial data, indicating an instability of the background geometry that we confirm with numeric simulations in the partially compactified case. There are stable modes with zero torsion, but all the unstable modes are torsion-full. This leads us to speculate that the instability is induced by the torsion degrees of freedom present in the Yang-Mills flow.

  7. Bi-Se doped with Cu, p-type semiconductor

    DOE Patents [OSTI]

    Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

    2013-08-20

    A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

  8. Lattice matched semiconductor growth on crystalline metallic substrates

    DOE Patents [OSTI]

    Norman, Andrew G; Ptak, Aaron J; McMahon, William E

    2013-11-05

    Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a metal or metal alloy substrate having a crystalline surface with a known lattice parameter (a). The methods further include growing a crystalline semiconductor alloy layer on the crystalline substrate surface by coincident site lattice matched epitaxy. The semiconductor layer may be grown without any buffer layer between the alloy and the crystalline surface of the substrate. The semiconductor alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter (a). The semiconductor alloy may further be prepared to have a selected band gap.

  9. Proximity charge sensing for semiconductor detectors

    DOE Patents [OSTI]

    Luke, Paul N; Tindall, Craig S; Amman, Mark

    2013-10-08

    A non-contact charge sensor includes a semiconductor detector having a first surface and an opposing second surface. The detector includes a high resistivity electrode layer on the first surface and a low resistivity electrode on the high resistivity electrode layer. A portion of the low resistivity first surface electrode is deleted to expose the high resistivity electrode layer in a portion of the area. A low resistivity electrode layer is disposed on the second surface of the semiconductor detector. A voltage applied between the first surface low resistivity electrode and the second surface low resistivity electrode causes a free charge to drift toward the first or second surface according to a polarity of the free charge and the voltage. A charge sensitive preamplifier coupled to a non-contact electrode disposed at a distance from the exposed high resistivity electrode layer outputs a signal in response to movement of free charge within the detector.

  10. Method of transferring strained semiconductor structure

    DOE Patents [OSTI]

    Nastasi, Michael A. (Santa Fe, NM); Shao, Lin (College Station, TX)

    2009-12-29

    The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the deposited multilayer structure is bonded to a second substrate and is separated away at the interface, which results in transferring a multilayer structure from one substrate to the other substrate. The multilayer structure includes at least one strained semiconductor layer and at least one strain-induced seed layer. The strain-induced seed layer can be optionally etched away after the layer transfer.

  11. Semiconductor P-I-N detector

    DOE Patents [OSTI]

    Sudharsanan, Rengarajan; Karam, Nasser H.

    2001-01-01

    A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

  12. Optical cavity furnace for semiconductor wafer processing

    DOE Patents [OSTI]

    Sopori, Bhushan L.

    2014-08-05

    An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

  13. Photoelectrochemical Semiconductor Surface Fortification via Ion

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Implantation - Energy Innovation Portal Vehicles and Fuels Vehicles and Fuels Solar Photovoltaic Solar Photovoltaic Hydrogen and Fuel Cell Hydrogen and Fuel Cell Find More Like This Return to Search Photoelectrochemical Semiconductor Surface Fortification via Ion Implantation National Renewable Energy Laboratory National Energy Technology Laboratory Contact NREL About This Technology Technology Marketing Summary Producing hydrogen from clean sources of energy has been one of the major

  14. A Spintronic Semiconductor with Selectable Charge Carriers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics,

  15. A Spintronic Semiconductor with Selectable Charge Carriers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics,

  16. A Spintronic Semiconductor with Selectable Charge Carriers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics,

  17. A Spintronic Semiconductor with Selectable Charge Carriers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics,

  18. A Spintronic Semiconductor with Selectable Charge Carriers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics,

  19. A Spintronic Semiconductor with Selectable Charge Carriers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics,

  20. A Spintronic Semiconductor with Selectable Charge Carriers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics,

  1. Electron Spin Dynamics in Semiconductor Quantum Dots

    SciTech Connect (OSTI)

    Marie, X.; Belhadj, T.; Urbaszek, B.; Amand, T.; Krebs, O.; Lemaitre, A.; Voisin, P.

    2011-07-15

    An electron spin confined to a semiconductor quantum dot is not subject to the classical spin relaxation mechanisms known for free carriers but it strongly interacts with the nuclear spin system via the hyperfine interaction. We show in time resolved photoluminescence spectroscopy experiments on ensembles of self assembled InAs quantum dots in GaAs that this interaction leads to strong electron spin dephasing.

  2. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  3. Semiconductor junction formation by directed heat

    DOE Patents [OSTI]

    Campbell, Robert B.

    1988-03-24

    The process of the invention includes applying precursors 6 with N- and P-type dopants therein to a silicon web 2, with the web 2 then being baked in an oven 10 to drive off excessive solvents, and the web 2 is then heated using a pulsed high intensity light in a mechanism 12 at 1100.degree.-1150.degree. C. for about 10 seconds to simultaneously form semiconductor junctions in both faces of the web.

  4. Visible-wavelength semiconductor lasers and arrays

    DOE Patents [OSTI]

    Schneider, Jr., Richard P.; Crawford, Mary H.

    1996-01-01

    A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

  5. Photovoltaic healing of non-uniformities in semiconductor devices

    DOE Patents [OSTI]

    Karpov, Victor G.; Roussillon, Yann; Shvydka, Diana; Compaan, Alvin D.; Giolando, Dean M.

    2006-08-29

    A method of making a photovoltaic device using light energy and a solution to normalize electric potential variations in the device. A semiconductor layer having nonuniformities comprising areas of aberrant electric potential deviating from the electric potential of the top surface of the semiconductor is deposited onto a substrate layer. A solution containing an electrolyte, at least one bonding material, and positive and negative ions is applied over the top surface of the semiconductor. Light energy is applied to generate photovoltage in the semiconductor, causing a redistribution of the ions and the bonding material to the areas of aberrant electric potential. The bonding material selectively bonds to the nonuniformities in a manner such that the electric potential of the nonuniformities is normalized relative to the electric potential of the top surface of the semiconductor layer. A conductive electrode layer is then deposited over the top surface of the semiconductor layer.

  6. Methods and devices for fabricating and assembling printable semiconductor elements

    DOE Patents [OSTI]

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2009-11-24

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  7. Methods and devices for fabricating and assembling printable semiconductor elements

    DOE Patents [OSTI]

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2011-07-19

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  8. Methods and devices for fabricating and assembling printable semiconductor elements

    DOE Patents [OSTI]

    Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2014-03-04

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  9. Methods and devices for fabricating and assembling printable semiconductor elements

    DOE Patents [OSTI]

    Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2013-05-14

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  10. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOE Patents [OSTI]

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2010-12-14

    Graded core/shell semiconductor nanorods and shaped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  11. Freescale Semiconductor Successfully Implements an Energy Management System

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    | Department of Energy Freescale Semiconductor Successfully Implements an Energy Management System Freescale Semiconductor Successfully Implements an Energy Management System This case study describes how Freescale Semiconductor implemented projects at its Oak Hill Fab plant in Austin, Texas, that reduced annual plant-wide energy consumption by 28 million kilowatt hours (kWh) of electricity and 26,000 million British thermal units (Btu) of natural gas between 2006 and 2009, saving more than

  12. Hot Electron Transfer from Semiconductor Nanocrystals | MIT-Harvard Center

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for Excitonics Hot Electron Transfer from Semiconductor Nanocrystals March 30, 2010 at 3pm/36-428 William A. Tisdale Department of Chemical Engineering and Materials Science University of Minnesota tisdale_002 abstract: In conventional semiconductor solar cells, absorption of photons with energies greater than the semiconductor band gap generate "hot" charge carriers that quickly "cool" before all of their energy can be captured - a process that limits device efficiency.

  13. Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and Fuel Cell Applications | Department of Energy for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Download presentation slides from the DOE Fuel Cell Technologies Office webinar "Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications" held on October 21, 2014. Opportunities for Wide Bandgap

  14. Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronics for

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Hydrogen and Fuel Cell Applications | Department of Energy Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Below is the text version of the webinar titled "Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications," originally presented on October 21, 2014. In addition to

  15. Deposition method for producing silicon carbide high-temperature semiconductors

    DOE Patents [OSTI]

    Hsu, George C.; Rohatgi, Naresh K.

    1987-01-01

    An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

  16. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOE Patents [OSTI]

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2013-03-26

    Graded core/shell semiconductor nanorods and shapped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  17. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOE Patents [OSTI]

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2009-05-19

    Disclosed herein is a graded core/shell semiconductor nanorod having at least a first segment of a core of a Group II-VI, Group III-V or a Group IV semiconductor, a graded shell overlying the core, wherein the graded shell comprises at least two monolayers, wherein the at least two monolayers each independently comprise a Group II-VI, Group III-V or a Group IV semiconductor.

  18. Tuning and synthesis of semiconductor nanostructures by mechanical compression

    DOE Patents [OSTI]

    Fan, Hongyou; Li, Binsong

    2015-11-17

    A mechanical compression method can be used to tune semiconductor nanoparticle lattice structure and synthesize new semiconductor nanostructures including nanorods, nanowires, nanosheets, and other three-dimensional interconnected structures. II-VI or IV-VI compound semiconductor nanoparticle assemblies can be used as starting materials, including CdSe, CdTe, ZnSe, ZnS, PbSe, and PbS.

  19. Organic Semiconductor Chemistry | MIT-Harvard Center for Excitonics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Semiconductor Chemistry December 13, 2012 at 3pm/36-428 Seth Marder Department of Chemistry/Biochemistry, Director, Center for Organic Photonics and Electronics, Georgia Tech marder_000 Abstract: Organic semiconductors have attracted interest for electronic applications due to their potential for use in low-cost, large-area, flexible electronic devices. While many examples of organic semiconductors for p-channel and n-channel organic field-effect transistors (OFETs) and organic photovoltaic

  20. Wide Bandgap Semiconductors: Essential to Our Technology Future |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Wide Bandgap Semiconductors: Essential to Our Technology Future Wide Bandgap Semiconductors: Essential to Our Technology Future January 15, 2014 - 8:00am Addthis Learn how wide bandgap semiconductors could impact clean energy technology and our daily lives. | Video by Sarah Gerrity and Matty Greene, Energy Department. Dr. Ernest Moniz Dr. Ernest Moniz Secretary of Energy What are the key facts? North Carolina State University will lead the Energy Department's new

  1. July 28, 2010, Guiding semiconductor research through collaborative engagement

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    The SRC ... Guiding semiconductor research through collaborative engagement Elizabeth J. Weitzman Exec. VP, SRC Exec. Director, Focus Center Research Program Semiconductor Research Corporation 2 ... Awarded Nat'l Medal of Technology Presidential Citation: "For building the world's largest and most successful university research force to support the ... semiconductor industry; For proving the concept of collaborative research as the first high-tech research consortium; and For creating the

  2. Method and system for powering and cooling semiconductor lasers

    SciTech Connect (OSTI)

    Telford, Steven J; Ladran, Anthony S

    2014-02-25

    A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

  3. Gluon scattering in N=4 super-Yang-Mills theory fromweak to strong coupling

    SciTech Connect (OSTI)

    Dixon, Lance J.; /SLAC

    2008-03-25

    I describe some recent developments in the understanding of gluon scattering amplitudes in N = 4 super-Yang-Mills theory in the large-N{sub c} limit. These amplitudes can be computed to high orders in the weak coupling expansion, and also now at strong coupling using the AdS/CFT correspondence. They hold the promise of being solvable to all orders in the gauge coupling, with the help of techniques based on integrability. They are intimately related to expectation values for polygonal Wilson loops composed of light-like segments.

  4. The Plasma Column Evolution in Gas-Puff Z-Pinches on the Yang Accelerator

    SciTech Connect (OSTI)

    Deng Jianjun; Yang Libing; Gu Yuanchao; Huang Xianbing; Li Fengping; Xv Zeping; Ye Shican; Cheng Guanghua; Chang Lihua; Zhou Shaotong; Zhang Siqun; Xie Weiping; Ding Bonan; Peng Xianjue

    2006-01-05

    The plasma column evolution in gas-puff z-pinch was investigated on the Yang accelerator. The pinch process was significantly influenced by the initial gas distribution. Uniformity of the gas-puff distribution resulted in the asymmetry of the initially load current through the main channels of the plasma layer. The zipper velocity and implosion speed under 'trumpet' distribution was given, it was observed the pinch speed and the temperature of the plasma near cathode increased when the rise time of the load current was shortened.

  5. From Decay to Complete Breaking: Pulling the Strings in SU(2) Yang-Mills Theory

    SciTech Connect (OSTI)

    Pepe, M.; Wiese, U.-J.

    2009-05-15

    We study (2Q+1) strings connecting two static charges Q in (2+1)D SU(2) Yang-Mills theory. While the fundamental (2) string between two charges Q=(1/2) is unbreakable, the adjoint (3) string connecting two charges Q=1 can break. When a (4) string is stretched beyond a critical length, it decays into a (2) string by gluon pair creation. When a (5) string is stretched, it first decays into a (3) string, which eventually breaks completely. The energy of the screened charges at the ends of a string is well described by a phenomenological constituent gluon model.

  6. Ramgraber Semiconductor Equipment GmbH | Open Energy Information

    Open Energy Info (EERE)

    Zip: 85649 Sector: Solar Product: Makes semiconductor processing equipment, including solar cell manufacturing lines. Coordinates: 48.006898, 11.684687 Show Map Loading...

  7. Interfacial Chemistry of III-V Semiconductors for Photoelectrochemical...

    Office of Scientific and Technical Information (OSTI)

    Photoelectrochemical Water Splitting Citation Details In-Document Search Title: Interfacial Chemistry of III-V Semiconductors for Photoelectrochemical Water Splitting Authors: ...

  8. Yangzhou Zhongke Semiconductor Lighting Center Co Ltd | Open...

    Open Energy Info (EERE)

    Center Co. Ltd. Place: Yangzhou, Jiangsu Province, China Zip: 2250000 Product: LED packaging startup backed by the Institute of Semiconductors at Chinese Academy of Sciences...

  9. Understanding How Semiconductors Absorb Light | U.S. DOE Office...

    Office of Science (SC) Website

    Advanced Scientific Computing Research U.S. Department of Energy SC-21Germantown Building ... semiconductors shorten the path to improved solar cells and other optoelectronic devices. ...

  10. Strain effects on the work function of an organic semiconductor...

    Office of Scientific and Technical Information (OSTI)

    (WF) in organic semiconductors is important not only for understanding electrical properties of organic thin ... Characterization Facility Oak Ridge National Lab. (ORNL), Oak ...