Sample records for dong yang semiconductor

  1. Ados Co Ltd Dong Yang Semiconductor | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlinPapersWindeySanta Clara,Addington,Admire, Kansas: EnergyAdos Co Ltd

  2. Spatially Resolved Optoelectronics in Lead Sulfide Nanowires Yiming Yang, Xingyue Peng, and Dong Yu

    E-Print Network [OSTI]

    Yu, Dong

    -type). Optoelectronic measurements of PbS single NW FETs were performed on our home-build scanning photocurrent-level injection. Understanding the behavior of photogenerated carriers in semiconductors is essential solar energy devices and lasers. Therefore, it is 10.1149/05808.0087ecst ©The Electrochemical Society

  3. Semiconductor Nanowires: What's Next?

    E-Print Network [OSTI]

    Yang, Peidong

    2011-01-01T23:59:59.000Z

    Semiconductor nanowires, what’s next? Peidong Yang, Ruoxuelater research into semiconductor whiskers with nanoscalewere popularized as semiconductor nanowires in the following

  4. Spontaneous emission factor for semiconductor superluminescent diodes Yongsheng Zhao, Weihua Han, Junfeng Song, Xuemei Li, Yang Liu, Dingsan Gao,

    E-Print Network [OSTI]

    Cao, Hui

    Spontaneous emission factor for semiconductor superluminescent diodes Yongsheng Zhao, Weihua Han emission factor is an important parameter for the characterization of semiconductor light emitting devices difference involved in each device. In this article, the spontaneous emission factor for superluminescent

  5. Dong Kwun Kim | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't Your Destiny:Revised Finding of No53197E T ADRAFTJanuaryDominion Resources, Inc. VideoDong Kwun

  6. Semiconductor Quantum Rods as Single Molecule Fluorescent Biological Labels

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    A. , Gu, W. , Larabell, C. & Alivisatos, A.P. SemiconductorHu, J.T. , Yang, W.D. & Alivisatos, A.P. Band gap variationZanchet, D. , Weiss, S. , ,Alivisatos, A. P. Synthesis and

  7. Spreading of energy in the Ding-Dong Model

    E-Print Network [OSTI]

    S. Roy; A. Pikovsky

    2012-06-26T23:59:59.000Z

    We study properties of energy spreading in a lattice of elastically colliding harmonic oscillators (Ding-Dong model). We demonstrate that in the regular lattice the spreading from a localized initial state is mediated by compactons and chaotic breathers. In a disordered lattice the compactons do not exist, and the spreading eventually stops, resulting in a finite configuration with a few chaotic spots.

  8. Server-Based Dynamic Server Selection Yingfei Dong1

    E-Print Network [OSTI]

    Hou, Y. Thomas

    Server-Based Dynamic Server Selection Algorithms Yingfei Dong1 , Zhi-Li Zhang1 , and Y. Thomas Hou2 94085 thou@fla.fujitsu.com Abstract. Server selection is an important problem in replicated server systems distributed over the Internet. In this paper, we study two server selection algorithms under

  9. Isotopically controlled semiconductors

    E-Print Network [OSTI]

    Haller, Eugene E.

    2006-01-01T23:59:59.000Z

    16 Isotopically Controlled Semiconductors Eugene E. Hallerof isotopically engineered semiconductors; for outstandingisotopically controlled semiconductor crystals. This article

  10. CV Name: Jianjun Yang JIANJUN YANG

    E-Print Network [OSTI]

    Sparks, Donald L.

    in agricultural ecosystem, thus being of great importance for food security and carbon sequestration. Synchrotron collaborative carbon project, aimed at soil carbon sequestration for climate change mitigation. Besides Prof understanding of SOM stability and carbon sequestration in soil systems. Peer-reviewed Publications 1. Yang J

  11. SEMICONDUCTOR DETECTORS - AN INTRODUCTION

    E-Print Network [OSTI]

    Goulding, F.S.

    2011-01-01T23:59:59.000Z

    infrinfc primely owned dtfiw. SEMICONDUCTOR DETECTORS - ANi) LBL-7282 I. History Semiconductor detectors appeared onof alpha particles by semiconductor diodes several years

  12. Isotopically controlled semiconductors

    E-Print Network [OSTI]

    Haller, E.E.

    2004-01-01T23:59:59.000Z

    and phonons in semiconductors,” J. Non-Cryst. Solids 141 (LVM) Spectroscopy of Semiconductors,” Mat. Res. Soc. Symp.Isotopically Engineered Semiconductors – New Media for the

  13. Isotopically controlled semiconductors

    E-Print Network [OSTI]

    Haller, Eugene E.

    2001-01-01T23:59:59.000Z

    Transmutation Doping of Semiconductor Materials, NationalTransmutation Doping of Semiconductor Materials, NationalProperties of Doped Semiconductors , Solid State Series,

  14. Life-cycle Assessment of Semiconductors

    E-Print Network [OSTI]

    Boyd, Sarah B.

    2009-01-01T23:59:59.000Z

    SemiconductorThe Semiconductor Industry: Size, Growth andSemiconductor Life-cycle Environmental Impacts . . . . . . .

  15. Hydrogen in semiconductors and insulators

    E-Print Network [OSTI]

    Van de Walle, Chris G.

    2007-01-01T23:59:59.000Z

    level in two different semiconductors, illustrating the06-01999R1 Hydrogen in semiconductors and insulators SpecialA. oxide materials; A. semiconductors; C. electronic

  16. Infrared spectroscopy of novel semiconductors /

    E-Print Network [OSTI]

    Chapler, Brian Caleb

    2014-01-01T23:59:59.000Z

    dilute magnetic semiconductor . . . . . . . . 1 1.1.1in the topological semiconductors Bi2Te3 and Mn—dopedM. Fundamentals of semiconductors. Springer-Verlag, Berlin,

  17. Novel room temperature ferromagnetic semiconductors

    E-Print Network [OSTI]

    Gupta, Amita

    2004-01-01T23:59:59.000Z

    Spin Related Phenomena in Semiconductors, (27-28 Jan 1997,FERROMAGNETIC SEMICONDUCTORS Amita Gupta Stockholm, Junedata are processed by semiconductor chips, and stored in the

  18. Mining Unexpected Sequential Patterns and Dong (Haoyuan) Li, Anne Laurent, Pascal Poncelet

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Mining Unexpected Sequential Patterns and Rules Dong (Haoyuan) Li, Anne Laurent, Pascal Poncelet November 14, 2007 Abstract Sequential pattern mining is the one most concentrated and applied in sequence mining research, it gives a frequency based view of the cor- relations between elements contained

  19. Dynamic Uplink Power Control for Cellular Radio Systems over Fast Fading Liang Dong and Guanghan Xu

    E-Print Network [OSTI]

    Dong, Liang

    Dynamic Uplink Power Control for Cellular Radio Systems over Fast Fading Channel Liang Dong varies drastically under fast fading, the power control signaling from the base station may not be appropriate for the current uplink. In the proposed power control scheme, the mobile transmits at variable

  20. Jampots: a Mashup System towards an E-Learning Ecosystem Bo Dong1, 2

    E-Print Network [OSTI]

    Li, Haifei

    Jampots: a Mashup System towards an E-Learning Ecosystem Bo Dong1, 2 , Qinghua Zheng1, 2 , Lingzhi believed that an E-Learning ecosystem is the next generation E-Learning. Nowadays, the current trend of Web-Learning ecosystem. A mashup approach to an E-Learning ecosystem enhances the flourish and sustainability of E

  1. An E-learning Ecosystem Based on Cloud Computing Infrastructure Bo Dong1, 2

    E-Print Network [OSTI]

    Li, Haifei

    An E-learning Ecosystem Based on Cloud Computing Infrastructure Bo Dong1, 2 , Qinghua Zheng1, 2 that an e-learning ecosystem is the next generation e- learning. However, the current models of e-learning ecosystems lack the support of underlying infrastructures, which can dynamically allocate the required

  2. The Cricket Location-Support Zhe Dong, Rufeng Meng, Zhexing Sun, Rajiv Mishra

    E-Print Network [OSTI]

    Karp, Brad

    The Cricket Location-Support System Zhe Dong, Rufeng Meng, Zhexing Sun, Rajiv Mishra 11/02/2009 #12 Ultrasound Travels in a slower speed comparing with RF (1.13 ft/ms at room temperature) #12;111111 How does Solution: Using randomization (Uniform Distribution) to avoid such collisions Using RF signal with longer

  3. Students' difficulties with integration in electricity Dong-Hai Nguyen and N. Sanjay Rebello

    E-Print Network [OSTI]

    Zollman, Dean

    Students' difficulties with integration in electricity Dong-Hai Nguyen and N. Sanjay Rebello Department of Physics, Kansas State University, Manhattan, Kansas 66506, USA (Received 30 January 2011 physics experience when solving problems involving integration in the context of electricity. We conducted

  4. Wave-current interaction in strongly sheared mean flows Zhifei Dong and James T. Kirby

    E-Print Network [OSTI]

    Kirby, James T.

    Wave-current interaction in strongly sheared mean flows Zhifei Dong and James T. Kirby Center@udel.edu Abstract We describe a framework for wave-current interaction theory for small-amplitude surface gravity waves propagating on the strongly sheared mean flows. Using a multiple-scale perturbation method, we

  5. Proton radioactivity within a generalized liquid drop model J. M. Dong,1

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Proton radioactivity within a generalized liquid drop model J. M. Dong,1 H. F. Zhang,1 and G. Royer) The proton radioactivity half-lives of spherical proton emitters are investigated theoretically. The potential barriers preventing the emission of proton are determined in the quasimolecular shape path within

  6. Stochastic decoding of Turbo Codes Quang Trung DONG, Matthieu ARZEL*, Christophe JEGO and Warren J. GROSS

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1 Stochastic decoding of Turbo Codes Quang Trung DONG, Matthieu ARZEL*, Christophe JEGO and Warren the application of the stochastic decoding approach to the families of convolutional codes and turbo codes. It demonstrates that stochastic compu- tation is a promising solution to improve the data throughput of turbo

  7. Cloud tomography: Role of constraints and a new algorithm Dong Huang,1

    E-Print Network [OSTI]

    Cloud tomography: Role of constraints and a new algorithm Dong Huang,1 Yangang Liu,1 and Warren 2008. [1] Retrieving spatial distributions of cloud liquid water content from limited-angle emission data (passive microwave cloud tomography) is ill-posed, and a small inaccuracy in the data and

  8. Network Intrusion Simulation Using OPNET Shabana Razak, Mian Zhou, Sheau-Dong Lang*

    E-Print Network [OSTI]

    Lang, Sheau-Dong

    by the security managers is how to identify network intrusions and how to evaluate the effectiveness of IDS. 31 Network Intrusion Simulation Using OPNET Shabana Razak, Mian Zhou, Sheau-Dong Lang* School and network security are important issues faced by the IT industry. Hackers apply an array of techniques

  9. Unitary lens semiconductor device

    DOE Patents [OSTI]

    Lear, Kevin L. (Albuquerque, NM)

    1997-01-01T23:59:59.000Z

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  10. Mismatched semiconductor nanowires: growth and characterization

    E-Print Network [OSTI]

    Yim, Joanne Wing Lan

    2011-01-01T23:59:59.000Z

    SemiconductorFundamentals of Semiconductors: Physics and MaterialsDilute III-V Nitride Semiconductors and Material Systems (

  11. Joyce Yang | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the.pdfBreaking ofOil & Gas » MethaneJohnson ControlsJoyce Yang About Us Dr. Joyce Yang

  12. Interconnected semiconductor devices

    DOE Patents [OSTI]

    Grimmer, Derrick P. (White Bear Lake, MN); Paulson, Kenneth R. (North St. Paul, MN); Gilbert, James R. (St. Paul, MN)

    1990-10-23T23:59:59.000Z

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  13. Semiconductor bridge (SCB) detonator

    DOE Patents [OSTI]

    Bickes, R.W. Jr.; Grubelich, M.C.

    1999-01-19T23:59:59.000Z

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge (SCB) igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length. 3 figs.

  14. Semiconductor bridge (SCB) detonator

    DOE Patents [OSTI]

    Bickes, Jr., Robert W. (Albuquerque, NM); Grubelich, Mark C. (Albuquerque, NM)

    1999-01-01T23:59:59.000Z

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

  15. Chemical dynamics and bonding at gas/semiconductor and oxide/semiconductor interfaces

    E-Print Network [OSTI]

    Bishop, Sarah R.

    2010-01-01T23:59:59.000Z

    applied to alternative semiconductor materials to determinephase oxides and semiconductor surfaces. Both experimentalunderstanding of the oxide/semiconductor interface. The

  16. Mesoscopic pointlike defects in semiconductors: Deep-level energies D. D. Nolte

    E-Print Network [OSTI]

    Nolte, David D.

    -semiconductor heterostructures to include metal-semiconductor,1 insulator-semiconductor, and superconductor-semiconductor

  17. Semiconductor Engineers in a Global Economy

    E-Print Network [OSTI]

    Brown, Clair; Linden, Greg

    2007-01-01T23:59:59.000Z

    Technology: The Case of Semiconductors. Brookings Institute:Society, Space, and Semiconductors in The Restructuring Ofin the Global Semiconductor Industry. ” California

  18. Synthesis and Characterization of Mesoporous Semiconductors

    E-Print Network [OSTI]

    Kang, Chris Byung-hwa

    2012-01-01T23:59:59.000Z

    Brock, S. L. “Porous semiconductor chalcogenide aerogels. ”Nanostructured Semiconductor. ” J. Am. Chem. Soc. , 127,in mesostructured semiconductors based on the [SnSe 4 ]4-

  19. Semiconductor Nanowires and Nanotubes for Energy Conversion

    E-Print Network [OSTI]

    Fardy, Melissa Anne

    2010-01-01T23:59:59.000Z

    Thermoelectricity in semiconductor nanostructures. Science,splitting using semiconductor electrodes. InternationalChalcogenides, Monographs in Semiconductor Physics, ed. L.S.

  20. Dong, A. and A.M. Agogino, "Designing an Untethered Educational Digital Library" (with A. Dong), Proceedings of the IEEE International Workshop on Wireless and Mobile Technologies in Education (WMTE 2003).

    E-Print Network [OSTI]

    Agogino, Alice M.

    an Untethered Educational Digital Library" (with A. Dong), Proceedings of the IEEE International Workshop, CA 94720-1740 +1 510 643 1819 aagogino@me.berkeley.edu ABSTRACT Digital libraries, such as the SMETE Digital Library at UC Berkeley (www.smete.org), are quickly becoming mainstream tools for science

  1. DYNAMIC CONFIGURATION OF DATAFLOW GRAPH TOPOLOGY FOR DSP SYSTEM DESIGN Dong-Ik Ko and Shuvra S. Bhattacharyya

    E-Print Network [OSTI]

    Bhattacharyya, Shuvra S.

    DYNAMIC CONFIGURATION OF DATAFLOW GRAPH TOPOLOGY FOR DSP SYSTEM DESIGN Dong-Ik Ko and Shuvra S dynamic port can keep the model bounded. However, control flow depends on FSMs. Using FSMs for minor changes of control flow with data- flow graphs can make application models unnecessarily compli- cated

  2. Denial-of-Service Attacks on Battery-powered Mobile Computers Thomas Martin, Michael Hsiao, Dong Ha, Jayan Krishnaswami

    E-Print Network [OSTI]

    Ha, Dong S.

    computer, the battery is expected to give a certain battery life under a set of usage conditions whereDenial-of-Service Attacks on Battery-powered Mobile Computers Thomas Martin, Michael Hsiao, Dong Ha device inoperable by draining the battery more quickly than it would be drained under normal usage. We

  3. Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M Abstract Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP band gap

  4. Method of doping a semiconductor

    DOE Patents [OSTI]

    Yang, Chiang Y. (Miller Place, NY); Rapp, Robert A. (Columbus, OH)

    1983-01-01T23:59:59.000Z

    A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

  5. Quantum Semiconductor Modeling Ansgar Jungel

    E-Print Network [OSTI]

    Jüngel, Ansgar

    Quantum Semiconductor Modeling Ansgar J¨ungel Vienna University of Technology, Austria www.jungel.at.vu Ansgar J¨ungel (TU Wien) Quantum Semiconductor Modeling www.jungel.at.vu 1 / 154 #12;Contents 1 Introduction 2 Semiconductor modeling 3 Microscopic quantum models Density matrices Schr¨odinger models Wigner

  6. Kansas Advanced Semiconductor Project

    SciTech Connect (OSTI)

    Baringer, P.; Bean, A.; Bolton, T.; Horton-Smith, G.; Maravin, Y.; Ratra, B.; Stanton, N.; von Toerne, E.; Wilson, G.

    2007-09-21T23:59:59.000Z

    KASP (Kansas Advanced Semiconductor Project) completed the new Layer 0 upgrade for D0, assumed key electronics projects for the US CMS project, finished important new physics measurements with the D0 experiment at Fermilab, made substantial contributions to detector studies for the proposed e+e- international linear collider (ILC), and advanced key initiatives in non-accelerator-based neutrino physics.

  7. Synthesis and Characterization of Mesoporous Semiconductors and Their Energy Applications

    E-Print Network [OSTI]

    Kang, Chris Byung-hwa

    2013-01-01T23:59:59.000Z

    Biomaterials, Ceramics, and Semiconductors. ” Science, 277,I. “Nanostructured Semiconductors Templated by Cholesteryl-Nanostructured Semiconductor. ” J. Am. Chem. Soc. , 127,

  8. A Novel Class of High-TC Ferromagnetic Semiconductors

    E-Print Network [OSTI]

    Shlyk, L. V.

    2008-01-01T23:59:59.000Z

    Diluted magnetic semiconductor or clustering effect? ”,ferromagnetism in semiconductors”, J. Appl. Phys. , inMaking nonmagnetic semiconductors ferromagnetic”, Science,

  9. Magnetization dynamics and spin diffusion in semiconductors and metals

    E-Print Network [OSTI]

    Cywi?ski, ?ukasz

    2007-01-01T23:59:59.000Z

    to (III,Mn)V ferromagnetic semiconductors . . . . . . . . .semiconductors . . . . . . . . . . . . . . . . . .Spin di?usion in semiconductors and metals: a general

  10. Semiconductor radiation detector

    DOE Patents [OSTI]

    Patt, Bradley E. (Sherman Oaks, CA); Iwanczyk, Jan S. (Los Angeles, CA); Tull, Carolyn R. (Orinda, CA); Vilkelis, Gintas (Westlake Village, CA)

    2002-01-01T23:59:59.000Z

    A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.

  11. 2009;69:7294-7301. Published OnlineFirst September 8, 2009.Cancer Res Dong Wu, Yang Li, Gaojie Song, et al.

    E-Print Network [OSTI]

    Zhijie, Liu

    , Institute of Biophysics, Chinese Academy of Sciences, Beijing, China and 2 Structural Biology Center) regulates the flow of carbon through the one-carbon metabolic network, which supplies essential components 2009;69(18):7294­301] Introduction The folate-dependent one-carbon metabolic network supplies carbon

  12. CitySee: Urban CO2 Monitoring with Sensors Xufei Mao, Xin Miao, Yuan He, Tong Zhu, Jiliang Wang, Wei Dong, Xiang-Yang Li, and Yunhao Liu

    E-Print Network [OSTI]

    Liu, Yunhao

    and specialists all over the world. One of the main causes deteriorating global climate is the over- emission restrict) the emission of CO2 in order to slow down the steps of Global Warming. Since arguably more than monitoring, relay nodes placement, wire- less sensor networks. I. INTRODUCTION With the worsening of Global

  13. Eye Localization through Multiscale Sparse Dictionaries Fei Yang, Junzhou Huang, Peng Yang and Dimitris Metaxas

    E-Print Network [OSTI]

    Huang, Junzhou

    Eye Localization through Multiscale Sparse Dictionaries Fei Yang, Junzhou Huang, Peng Yang and Dimitris Metaxas Abstract-- This paper presents a new eye localization method via Multiscale Sparse Dictionaries (MSD). We built a pyramid of dictionaries that models context information at multiple scales. Eye

  14. Semiconductor Ion Implanters

    SciTech Connect (OSTI)

    MacKinnon, Barry A. [Isys, 2727 Walsh Ave., Suite 103, Santa Clara, CA 95051 (United States); Ruffell, John P. [Group 3, LLC, Sunnyvale, CA 94086 (United States)

    2011-06-01T23:59:59.000Z

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion. Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  15. WWW.MOTOROLA.COM/SEMICONDUCTORS Microcontrollers

    E-Print Network [OSTI]

    Song, Joe

    WWW.MOTOROLA.COM/SEMICONDUCTORS M68HC11 Microcontrollers M68HC11RM/D Rev. 6, 4/2002 M68HC11 Reference Manual FreescaleSemiconductor,I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc... #12;FreescaleSemiconductor,I Freescale Semiconductor, Inc. For More

  16. Method of passivating semiconductor surfaces

    DOE Patents [OSTI]

    Wanlass, Mark W. (Golden, CO)

    1990-01-01T23:59:59.000Z

    A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  17. Sandia National Laboratories: compound semiconductor

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    compound semiconductor Sandia and EMCORE: Solar Photovoltaics, Fiber Optics, MODE, and Energy Efficiency On March 29, 2013, in Concentrating Solar Power, Energy, Partnership,...

  18. Method of passivating semiconductor surfaces

    DOE Patents [OSTI]

    Wanlass, M.W.

    1990-06-19T23:59:59.000Z

    A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  19. Noise and synamics in semiconductor lasers

    E-Print Network [OSTI]

    Rana, Farhan, 1971-

    2003-01-01T23:59:59.000Z

    In this thesis, theoretical and experimental work on the noise and dynamics in continuous wave and mode-locked semiconductor lasers is presented. The main focus is on semiconductor cascade lasers and semiconductor mode-locked ...

  20. Semiconductors: From Manipulated to Managed Trade

    E-Print Network [OSTI]

    Tyson, Laura D'Andrea; Yoffie, David B.

    1991-01-01T23:59:59.000Z

    o f the Japanese semiconductor industry is a sucecsslul aridcommodnv product Ol the semiconductor industry. They are afor maJtini: semiconductors: »nc

  1. Electron vortices in semiconductors devicesa... Kamran Mohsenib

    E-Print Network [OSTI]

    Electron vortices in semiconductors devicesa... Kamran Mohsenib Aerospace Engineering Sciencies; published online 3 October 2005 The hydrodynamic model of electron transport in semiconductors is analyzed vorticity effects. Furthermore, conditions for observation of electron vortices in semiconductor devices

  2. SHORT PAPER Zifeng Yang Partha Sarkar Hui Hu

    E-Print Network [OSTI]

    Hu, Hui

    SHORT PAPER Zifeng Yang · Partha Sarkar · Hui Hu Visualization of the tip vortices in a wind along the elevation direction. Z. Yang Á P. Sarkar Á H. Hu (&) Department of Aerospace Engineering, Iowa

  3. Climate VISION: Private Sector Initiatives: Semiconductors

    Office of Scientific and Technical Information (OSTI)

    Agreements The U.S. semiconductor industry, represented by the members of the Environmental Protection Agency's PFC ReductionClimate Partnership for the Semiconductor...

  4. Climate VISION: Private Sector Initiatives: Semiconductors: Resources...

    Office of Scientific and Technical Information (OSTI)

    over 100 companies that account for more than 83% of U.S.-based semiconductor production. The SIA provides a forum for domestic semiconductor companies to work collectively...

  5. Characterization of Amorphous Zinc Tin Oxide Semiconductors....

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Amorphous Zinc Tin Oxide Semiconductors. Characterization of Amorphous Zinc Tin Oxide Semiconductors. Abstract: Amorphous zinc tin oxide (ZTO) was investigated to determine the...

  6. Opportunities for Wide Bandgap Semiconductor Power Electronics...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen...

  7. Layered semiconductor neutron detectors

    DOE Patents [OSTI]

    Mao, Samuel S; Perry, Dale L

    2013-12-10T23:59:59.000Z

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  8. Professor C. N. Yang and Statistical Mechanics

    E-Print Network [OSTI]

    F. Y. Wu

    2010-10-09T23:59:59.000Z

    Professor Chen Ning Yang has made seminal and influential contributions in many different areas in theoretical physics. This talk focuses on his contributions in statistical mechanics, a field in which Professor Yang has held a continual interest for over sixty years. His Master's thesis was on a theory of binary alloys with multi-site interactions, some 30 years before others studied the problem. Likewise, his other works opened the door and led to subsequent developments in many areas of modern day statistical mechanics and mathematical physics. He made seminal contributions in a wide array of topics, ranging from the fundamental theory of phase transitions, the Ising model, Heisenberg spin chains, lattice models, and the Yang-Baxter equation, to the emergence of Yangian in quantum groups. These topics and their ramifications will be discussed in this talk.

  9. Variable temperature semiconductor film deposition

    DOE Patents [OSTI]

    Li, Xiaonan (Golden, CO); Sheldon, Peter (Lakewood, CO)

    1998-01-01T23:59:59.000Z

    A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  10. Process for producing chalcogenide semiconductors

    DOE Patents [OSTI]

    Noufi, R.; Chen, Y.W.

    1985-04-30T23:59:59.000Z

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  11. Variable temperature semiconductor film deposition

    DOE Patents [OSTI]

    Li, X.; Sheldon, P.

    1998-01-27T23:59:59.000Z

    A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  12. Process for producing chalcogenide semiconductors

    DOE Patents [OSTI]

    Noufi, Rommel (Westminster, CO); Chen, Yih-Wen (Omaha, NE)

    1987-01-01T23:59:59.000Z

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  13. Graphene Edge Lithography Guibai Xie, Zhiwen Shi, Rong Yang, Donghua Liu, Wei Yang, Meng Cheng, Duoming Wang, Dongxia Shi,

    E-Print Network [OSTI]

    Zhang, Guangyu

    Graphene Edge Lithography Guibai Xie, Zhiwen Shi, Rong Yang, Donghua Liu, Wei Yang, Meng Cheng: Fabrication of graphene nanostructures is of importance for both investigating their intrinsic physical approach for graphene nanostructures. Compared with conventional lithographic fabrication techniques

  14. Einstein-Yang-Mills-Lorentz Black Holes

    E-Print Network [OSTI]

    Jose A. R. Cembranos; Jorge Gigante Valcarcel

    2015-01-28T23:59:59.000Z

    Different black hole solutions of the coupled Einstein-Yang-Mills equations are well known from long time. They have attracted much attention from mathematicians and physicists from their discovery. In this work, we analyze black holes associated with the gauge Lorentz group. In particular, we study solutions which identify the gauge connection with the spin connection. This ansatz allows to find exact solutions to the complete system of equations. By using this procedure, we show the equivalence between the Yang-Mills-Lorentz model in curved space-time and a particular set of extended gravitational theories.

  15. Physics with isotopically controlled semiconductors

    SciTech Connect (OSTI)

    Haller, E. E., E-mail: eehaller@lbl.gov [University of California at Berkeley, Department of Materials Science and Engineering (United States)

    2010-07-15T23:59:59.000Z

    This paper is based on a tutorial presentation at the International Conference on Defects in Semiconductors (ICDS-25) held in Saint Petersburg, Russia in July 2009. The tutorial focused on a review of recent research involving isotopically controlled semiconductors. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, is the most prominent effect for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples.

  16. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    DOE Patents [OSTI]

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25T23:59:59.000Z

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  17. Loop expansion in Yang-Mills thermodynamics

    E-Print Network [OSTI]

    Ralf Hofmann

    2009-11-05T23:59:59.000Z

    We argue that a selfconsistent spatial coarse-graining, which involves interacting (anti)calorons of unit topological charge modulus, implies that real-time loop expansions of thermodynamical quantities in the deconfining phase of SU(2) and SU(3) Yang-Mills thermodynamics are, modulo 1PI resummations, determined by a finite number of connected bubble diagrams.

  18. Semiconductor Bridge Cable Test

    SciTech Connect (OSTI)

    KING, TONY L.

    2002-01-01T23:59:59.000Z

    The semiconductor bridge (SCB) is an electroexplosive device used to initiate detonators. A C cable is commonly used to connect the SCB to a firing set. A series of tests were performed to identify smaller, lighter cables for firing single and multiple SCBs. This report provides a description of these tests and their results. It was demonstrated that lower threshold voltages and faster firing times can be achieved by increasing the wire size, which reduces ohmic losses. The RF 100 appears to be a reasonable substitute for C cable when firing single SCBs. This would reduce the cable volume by 68% and the weight by 67% while increasing the threshold voltage by only 22%. In general, RG 58 outperforms twisted pair when firing multiple SCBs in parallel. The RG 58's superior performance is attributed to its larger conductor size.

  19. Mathematical Modeling of Semiconductor Devices

    E-Print Network [OSTI]

    Jüngel, Ansgar

    fibers. · Optoelectronic emitters convert an electronic signal into light. Examples are light-emitting diodes (LED) used in displays and indication lambs and semiconductor lasers used in compact disk systems

  20. Modeling the semiconductor industry dynamics

    E-Print Network [OSTI]

    Wu, Kailiang

    2008-01-01T23:59:59.000Z

    The semiconductor industry is an exciting and challenging industry. Strong demand at the application end, plus the high capital intensity and rapid technological innovation in manufacturing, makes it difficult to manage ...

  1. Universal alignment of hydrogen levels in semiconductors and insulators

    E-Print Network [OSTI]

    Van de Walle, C G

    2006-01-01T23:59:59.000Z

    including nitride semiconductors and transparent oxides.and C. G. Van de Walle, in Hydrogen in SemiconductorsII, Semiconductors and Semimetals Vol. 61, edited by N. H.

  2. Identifying semiconductors by d.c. ionization conductivity

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    expected from high-Z semiconductor detectors? ,” IEEE Transand binary compound semiconductors and insulators,” J PhysIdentifying Semiconductors by D.C. Ionization Conductivity

  3. Nitride semiconductor Surface and interface characterization and device design

    E-Print Network [OSTI]

    Zhang, Hongtao

    2006-01-01T23:59:59.000Z

    Lett. 80 , D. Schroder, Semiconductor Material and Devicein III-V Nitride Semiconductors: Applications and Devices ,SAN DIEGO Nitride Semiconductor Surface and Interface

  4. Semiconductor Quantum Rods as Single Molecule Fluorescent Biological Labels

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    Alivisatos, A.P. Semiconductor nanocrystas for biologicalemission from colloidal semiconductor quantum rods. ScienceLight amplification in semiconductor nanocrystals: Quantum

  5. Enhanced Semiconductor Nanocrystal Conductance via Solution Grown Contacts

    E-Print Network [OSTI]

    Sheldon, Matthew T.

    2010-01-01T23:59:59.000Z

    G. ; Avouris, P. , Metal-semiconductor nanocontacts: SiliconIndividual Colloidal Semiconductor Nanorods. Nano Lett 2008,Physical Chemistry of Semiconductor Nanocrystals. J. Phys.

  6. Isovalent Anion Substitution in Ga-Mn-pnictide Ferromagnetic Semiconductors

    E-Print Network [OSTI]

    Stone, Peter

    2010-01-01T23:59:59.000Z

    63. O. Madelung, Semiconductors - Basic Data, 2nd Ed. (in Laser Annealing of Semiconductors, edited by J. M. PoateProperties of Semiconductors ("Atom" Publ. House, Moscow,

  7. Semiconductor Nanowire: What's Next? Peidong Yang,* Ruoxue Yan, and Melissa Fardy

    E-Print Network [OSTI]

    Yang, Peidong

    include nanowire electronics, nanowire photonics, nanowires for energy conversion and storage, energy conversion, bio-nano interface W hen R. S. Wagner wrote down the following equation Rmin ) [(2Vl of Chemistry, University of California, Materials Sciences Division, Lawrence Berkeley National Laboratory

  8. Inelastic scattering in a monolayer graphene sheet: A weak-localization study Dong-Keun Ki, Dongchan Jeong, Jae-Hyun Choi, and Hu-Jong Lee*

    E-Print Network [OSTI]

    Lee, Hu-Jong

    ,7 II. SAMPLE PREPARATION AND MEASUREMENTS A monolayer graphene sheet used in this study was meInelastic scattering in a monolayer graphene sheet: A weak-localization study Dong-Keun Ki in a graphene sheet, a single layer of graphite, exhibit distinct characteristics from those in other two

  9. Charles Nielsen; Jan Larsen; Kristian Morgen, DONG Energy, Kraftsvaerksvej 53, 7000 Fredericia, Denmark Security of supply, sustainability and the market are controlling parameters for developing the energy

    E-Print Network [OSTI]

    Bioethanol Charles Nielsen; Jan Larsen; Kristian Morgen, DONG Energy, Kraftsvaerksvej 53, 7000 for developing the energy system. Bioethanol is part of the solution to the question about security of supply and the demand for a sustainable development, and all over Europe 1st generation bioethanol plants are being

  10. Lyapunov instability of rigid diatomic molecules in three dimensions Young-Han Shin, Dong-Chul Ihm, and Eok-Kyun Lee

    E-Print Network [OSTI]

    Lee, EokKyun

    Lyapunov instability of rigid diatomic molecules in three dimensions Young-Han Shin, Dong-Chul Ihm June 2001; published 24 September 2001 We study the Lyapunov instability of a three-dimensional fluid and angular variables for the configura- tional space variables. The spectra of Lyapunov exponents

  11. Impurity gettering in semiconductors

    DOE Patents [OSTI]

    Sopori, B.L.

    1995-06-20T23:59:59.000Z

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device is disclosed. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500 C to about 700 C for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal. 1 fig.

  12. Impurity gettering in semiconductors

    DOE Patents [OSTI]

    Sopori, Bhushan L. (Denver, CO)

    1995-01-01T23:59:59.000Z

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  13. Theory of Organic Magnetoresistance in Disordered Organic Semiconductors

    E-Print Network [OSTI]

    Flatte, Michael E.

    Theory of Organic Magnetoresistance in Disordered Organic Semiconductors Nicholas J. Harmon semiconductors, disordered semiconductors, organic magnetoresistance, percolation theory, spin transport organic semiconductors. The theory proposed here maps the complex phenomena of spin-dependent hopping onto

  14. ECE 344--Semiconductor Devices & Materials ECE Department, UMass Amherst

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    1 Syllabus ECE 344--Semiconductor Devices & Materials ECE Department, UMass Amherst Fall 2013 transport in semiconductors Explain the operating principles in semiconductor devices (diodes, capacitors Topics: Fundamentals of Semiconductors; Theory of Electrical Conduction; Device Operations (See "Class

  15. ECE 609 Semiconductor Devices Department of Electrical and Computer Engineering

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    ECE 609 ­ Semiconductor Devices Department of Electrical and Computer Engineering University of semiconductor electronic devices in terms of material properties, interface and junction characteristics). ________________________________________________________________________ Preliminary Course Outline 1. Overview of Semiconductor Physics 1.1 Semiconductor Materials

  16. ECE 609 Semiconductor Devices Department of Electrical and Computer Engineering

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    ECE 609 ­ Semiconductor Devices Department of Electrical and Computer Engineering University. ________________________________________________________________________ Preliminary Course Outline 1. Overview of Semiconductor Physics 1.1 Semiconductor Materials-V Characteristics, Nonideal Behavior) 2.2 Metal Semiconductor Junctions (Schottky Barriers, Ohmic Contacts) 2

  17. Wide-Bandgap Semiconductors

    SciTech Connect (OSTI)

    Chinthavali, M.S.

    2005-11-22T23:59:59.000Z

    With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters. With the advent of the use of SiC devices it is imperative that models of these be made available in commercial simulators. This enables power electronic designers to simulate their designs for various test conditions prior to fabrication. To build an accurate transistor-level model of a power electronic system such as an inverter, the first step is to characterize the semiconductor devices that are present in the system. Suitable test beds need to be built for each device to precisely test the devices and obtain relevant data that can be used for modeling. This includes careful characterization of the parasitic elements so as to emulate the test setup as closely as possible in simulations. This report is arranged as follows: Chapter 2--The testing and characterization of several diodes and power switches is presented. Chapter 3--A 55-kW hybrid inverter (Si insulated gate bipolar transistor--SiC Schottky diodes) device models and test results are presented. A detailed description of the various test setups followed by the parameter extraction, modeling, and simulation study of the inverter performance is presented. Chapter 4--A 7.5-kW all-SiC inverter (SiC junction field effect transistors (JFET)--SiC Schottky diodes) was built and tested. The models built in Saber were validated using the test data and the models were used in system applications in the Saber simulator. The simulation results and a comparison of the data from the prototype tests are discussed in this chapter. Chapter 5--The duration test results of devices utilized in buck converters undergoing reliability testing are presented.

  18. Exterior Differential Systems for Yang-Mills Theories

    E-Print Network [OSTI]

    Frank B. Estabrook

    2008-12-05T23:59:59.000Z

    Exterior differential systems are given, and their Cartan characters calculated, for Maxwell and SU(2)-Yang-Mills equations in dimensions from three to six.

  19. Correlated exciton dynamics in semiconductor nanostructures

    E-Print Network [OSTI]

    Wen, Patrick, Ph. D. Massachusetts Institute of Technology

    2013-01-01T23:59:59.000Z

    The absorption and dissipation of energy in semiconductor nanostructures are often determined by excited electron dynamics. In semiconductors, one fundamentally important electronic state is an exciton, an excited electron ...

  20. Method of preparing nitrogen containing semiconductor material

    DOE Patents [OSTI]

    Barber, Greg D.; Kurtz, Sarah R.

    2004-09-07T23:59:59.000Z

    A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.

  1. Disordered electronic and magnetic systems - transition metal (Mn) and rare earth (Gd) doped amorphous group IV semiconductors (C, Si, Ge)

    E-Print Network [OSTI]

    Zeng, Li

    2007-01-01T23:59:59.000Z

    1.1 Magnetic Semiconductors . . . . . . . . . . . . . . .Semiconductors . . . . . . . . . . . . . . . . . . . 1.3in Semiconductors . . . . . . . . . . . . . . . . . . 1.3.5

  2. Semiconductor electrode with improved photostability characteristics

    DOE Patents [OSTI]

    Frank, A.J.

    1985-02-19T23:59:59.000Z

    An electrode is described for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode consists of a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

  3. Semiconductor nanocrystal-based phagokinetic tracking

    DOE Patents [OSTI]

    Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

    2014-11-18T23:59:59.000Z

    Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

  4. Wide band gap semiconductor templates

    DOE Patents [OSTI]

    Arendt, Paul N. (Los Alamos, NM); Stan, Liliana (Los Alamos, NM); Jia, Quanxi (Los Alamos, NM); DePaula, Raymond F. (Santa Fe, NM); Usov, Igor O. (Los Alamos, NM)

    2010-12-14T23:59:59.000Z

    The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

  5. Review: Semiconductor Quantum Light Sources

    E-Print Network [OSTI]

    Andrew J Shields

    2007-04-03T23:59:59.000Z

    Lasers and LEDs display a statistical distribution in the number of photons emitted in a given time interval. New applications exploiting the quantum properties of light require sources for which either individual photons, or pairs, are generated in a regulated stream. Here we review recent research on single-photon sources based on the emission of a single semiconductor quantum dot. In just a few years remarkable progress has been made in generating indistinguishable single-photons and entangled photon pairs using such structures. It suggests it may be possible to realise compact, robust, LED-like semiconductor devices for quantum light generation.

  6. Semiconductor films on flexible iridium substrates

    DOE Patents [OSTI]

    Goyal, Amit

    2005-03-29T23:59:59.000Z

    A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

  7. On Top-k Recommendation using Social Networks Xiwang Yang

    E-Print Network [OSTI]

    Liu, Yong

    On Top-k Recommendation using Social Networks Xiwang Yang , Harald Steck ,Yang Guo and Yong Liu). Social network based top-k recommendation, which recom- mends to a user a small number of items at a time, is not well studied. In this paper, we conduct a comprehensive study on improving the accuracy of top

  8. Minimizing Private Data Disclosures in the Smart Grid Weining Yang

    E-Print Network [OSTI]

    McDaniel, Patrick Drew

    Minimizing Private Data Disclosures in the Smart Grid Weining Yang Purdue University yang469@cs@cse.psu.edu Patrick McDaniel Penn State University mcdaniel@cse.psu.edu ABSTRACT Smart electric meters pose monitors, smart meter data can reveal precise home appliance usage information. An emerging solution

  9. SHORT PAPER Zifeng Yang Partha Sarkar Hui Hu

    E-Print Network [OSTI]

    Hu, Hui

    SHORT PAPER Zifeng Yang · Partha Sarkar · Hui Hu Visualization of flow structures around a gable of S ¼ p VO R2 O=Q with Q being the Z. Yang Á P. Sarkar Á H. Hu (&) Department of Aerospace Engineering

  10. Mechanical scriber for semiconductor devices

    DOE Patents [OSTI]

    Lin, P.T.

    1985-03-05T23:59:59.000Z

    A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer. 5 figs.

  11. Mechanical scriber for semiconductor devices

    DOE Patents [OSTI]

    Lin, Peter T. (East Brunswick, NJ)

    1985-01-01T23:59:59.000Z

    A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer.

  12. Controlled growth of semiconductor crystals

    DOE Patents [OSTI]

    Bourret-Courchesne, E.D.

    1992-07-21T23:59:59.000Z

    A method is disclosed for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B[sub x]O[sub y] are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T[sub m1] of the oxide of boron (T[sub m1]=723 K for boron oxide B[sub 2]O[sub 3]), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T[sub m2] of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm[sup 2]. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 [mu]m. 7 figs.

  13. Controlled growth of semiconductor crystals

    DOE Patents [OSTI]

    Bourret-Courchesne, Edith D. (Richmond, CA)

    1992-01-01T23:59:59.000Z

    A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

  14. Top-Down Visual Saliency via Joint CRF and Dictionary Learning Jimei Yang and Ming-Hsuan Yang

    E-Print Network [OSTI]

    Yang, Ming-Hsuan

    Top-Down Visual Saliency via Joint CRF and Dictionary Learning Jimei Yang and Ming-Hsuan Yang University of California at Merced {jyang44,mhyang}@ucmerced.edu Abstract Top-down visual saliency facilities for reducing the search space. In this paper, we propose a novel top-down saliency model that jointly learns

  15. Rational Design and Preparation of Organic Semiconductors for use in Field Effect Transistors and Photovoltaic Cells

    E-Print Network [OSTI]

    Mauldin, Clayton Edward

    2010-01-01T23:59:59.000Z

    Distyryl Oligothiophene Semiconductors Abstract We describebonded Oligothiophene Semiconductor Side Chains Abstract Ato assemble oligothiophene semiconductors and control their

  16. Back-side readout semiconductor photomultiplier

    DOE Patents [OSTI]

    Choong, Woon-Seng; Holland, Stephen E

    2014-05-20T23:59:59.000Z

    This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region.

  17. Lateral coupled cavity semiconductor laser

    SciTech Connect (OSTI)

    Salzman, J.; Lang, R.; Yariv, A.

    1985-08-01T23:59:59.000Z

    We report the fabrication and operation of a lateral coupled cavity semiconductor laser that consists of two phase-locked parallel lasers of different lengths and with separate electrical contacts. Mode selectivity that results from the interaction between the two supermodes is investigated experimentally. Frequency selectivity and tunability are obtained by controlling the current to each laser separately. Highly stable single mode operation is also demonstrated.

  18. Compound semiconductor optical waveguide switch

    DOE Patents [OSTI]

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10T23:59:59.000Z

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  19. Routing for analog chip design at NXP semiconductors

    E-Print Network [OSTI]

    Utrecht, Universiteit

    Routing for analog chip design at NXP semiconductors Marjan van den Akker Theo Beelen Rob H.O. Box 80.089 3508 TB Utrecht The Netherlands #12;Routing for analog chip designs at NXP Semiconductors.1 NXP Semiconductors NXP Semiconductors N.V. (Nasdaq: NXPI) is a global semiconductor company and a long

  20. Optical devices featuring textured semiconductor layers

    DOE Patents [OSTI]

    Moustakas, Theodore D. (Dover, MA); Cabalu, Jasper S. (Cary, NC)

    2012-08-07T23:59:59.000Z

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  1. Optical devices featuring textured semiconductor layers

    DOE Patents [OSTI]

    Moustakas, Theodore D. (Dover, MA); Cabalu, Jasper S. (Cary, NC)

    2011-10-11T23:59:59.000Z

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  2. Stretchable semiconductor elements and stretchable electrical circuits

    DOE Patents [OSTI]

    Rogers, John A. (Champaign, IL); Khang, Dahl-Young (Seoul, KR); Menard, Etienne (Durham, NC)

    2009-07-07T23:59:59.000Z

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  3. The Yin and Yang of Hardware Heterogeneity: Can Software Survive?

    E-Print Network [OSTI]

    McKinley, Kathryn S.

    The Yin and Yang of Hardware Heterogeneity: Can Software Survive? Kathryn S. McKinley Microsoft- ingly choose high-level managed programming languages with safe pointer disciplines, garbage collection

  4. Running Coupling in SU(3) Yang-Mills Theory

    E-Print Network [OSTI]

    Ulli Wolff

    1993-11-23T23:59:59.000Z

    We report about our ongoing computation of running coupling constants in asymptotically free theories using the recursive finite size scaling technique. The latest results for the SU(3) Yang-Mills theory are presented.

  5. Reflection technique for thermal mapping of semiconductors

    DOE Patents [OSTI]

    Walter, Martin J. (Lee, NY)

    1989-06-20T23:59:59.000Z

    Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

  6. Low Energy Ion Implantationin Semiconductor Manufacturing | U...

    Office of Science (SC) Website

    Low Energy Ion Implantation in Semiconductor Manufacturing Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Applications of Nuclear Science...

  7. Climate VISION: Private Sector Initiatives: Semiconductors: Work...

    Office of Scientific and Technical Information (OSTI)

    of EPA. The plan describes actions the industry intends to take to achieve its Climate VISION goal by 2010. Read the Semiconductor Industry Association Work Plan (PDF 94...

  8. Climate VISION: Private Sector Initiatives: Semiconductors: Resources...

    Office of Scientific and Technical Information (OSTI)

    to reduce high global warming potential (GWP) greenhouse gas emissions by following a pollution prevention strategy. Today, nearly 80 percent of U.S. semiconductor manufacturers...

  9. Wafer-fused semiconductor radiation detector

    DOE Patents [OSTI]

    Lee, Edwin Y. (Livermore, CA); James, Ralph B. (Livermore, CA)

    2002-01-01T23:59:59.000Z

    Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

  10. Isovalent Anion Substitution in Ga-Mn-pnictide Ferromagnetic Semiconductors

    E-Print Network [OSTI]

    Stone, Peter

    2010-01-01T23:59:59.000Z

    a so-called diluted magnetic semiconductor (DMS). DMSs arein heavily doped magnetic semiconductors as the probabilitythis method to magnetic semiconductors, the 6×6 k·p matrix

  11. Performance of Adaptive DualDropping ILUT Preconditioners in Semiconductor

    E-Print Network [OSTI]

    Zhang, Jun

    Performance of Adaptive Dual­Dropping ILUT Preconditioners in Semiconductor Dopant Diffusion for iterative solution of sparse linear systems arising in semiconductor dopant diffusion modeling resolution, timestep in the adaptive ODE integrator and the problem physics. Key words: semiconductor TCAD

  12. OPTI 240: Semiconductor Physics and Lasers Instructor: Mahmoud Fallahi

    E-Print Network [OSTI]

    Arizona, University of

    OPTI 240: Semiconductor Physics and Lasers Instructor: Mahmoud Fallahi fallahi@optics.arizona.edu Spring Semester Introduction to Semiconductor Optoelectronic Introduction to quantum mechanics: Energy exclusion principle Metal, Insulator, Semiconductor Conduction band, valance band, energy gap Electrons

  13. Semiconductor Capabilities in the U.S. and Industrializing Asia

    E-Print Network [OSTI]

    Brown, Clair; Linden, Greg

    2008-01-01T23:59:59.000Z

    data. Table 2: U.S. Semiconductor Engineers By Location,medium-sized U.S. semiconductor companies, which togetherto represent all U.S. semiconductor firms. The total

  14. PROTECTIVE SURFACE COATINGS ON SEMICONDUCTOR NUCLEAR RADIATION DETECTORS

    E-Print Network [OSTI]

    Hansen, W.L.

    2010-01-01T23:59:59.000Z

    ON SEMICONDUCTOR NUCLEAR RADIATION DETECTORS W. L. Hansen,COATINGS ON SEMICONDUCTOR NUCLEAR RADIATION DETECTORS* W. L.the use of germanium nuclear radiation detec­ tors, a new

  15. New ALS Technique Guides IBM in Next-Generation Semiconductor...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New ALS Technique Guides IBM in Next-Generation Semiconductor Development New ALS Technique Guides IBM in Next-Generation Semiconductor Development Print Wednesday, 21 January 2015...

  16. Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal Transition and Remarkable Large Magnetism. Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal Transition...

  17. Engineering Density of States of Earth Abundant Semiconductors...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of States of Earth Abundant Semiconductors for Enhanced Thermoelectric Power Factor Engineering Density of States of Earth Abundant Semiconductors for Enhanced Thermoelectric...

  18. advanced semiconductor manufacturing: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Websites Summary: Business and Manufacturing Tohru Ogawa Semiconductor Company Sony Corporation 12;WISE 2000 ContentsContents Paradigm Shift in Semiconductor Business...

  19. Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronic...

    Broader source: Energy.gov (indexed) [DOE]

    Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronics...

  20. Charge-carrier transport in amorphous organic semiconductors

    E-Print Network [OSTI]

    Limketkai, Benjie, 1982-

    2008-01-01T23:59:59.000Z

    Since the first reports of efficient luminescence and absorption in organic semiconductors, organic light-emitting devices (OLEDs) and photovoltaics (OPVs) have attracted increasing interest. Organic semiconductors have ...

  1. Optic probe for semiconductor characterization

    DOE Patents [OSTI]

    Sopori, Bhushan L. (Denver, CO); Hambarian, Artak (Yerevan, AM)

    2008-09-02T23:59:59.000Z

    Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

  2. Nonlinear Peltier effect in semiconductors Mona Zebarjadia

    E-Print Network [OSTI]

    Nonlinear Peltier effect in semiconductors Mona Zebarjadia Department of Electrical Engineering; published online 18 September 2007 Nonlinear Peltier coefficient of a doped InGaAs semiconductor is calculated numerically using the Monte Carlo technique. The Peltier coefficient is also obtained analytically

  3. Preparation of a semiconductor thin film

    DOE Patents [OSTI]

    Pehnt, M.; Schulz, D.L.; Curtis, C.J.; Ginley, D.S.

    1998-01-27T23:59:59.000Z

    A process is disclosed for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

  4. Ultra-high speed semiconductor lasers

    SciTech Connect (OSTI)

    Lau, K.Y.; Yariv, A.

    1985-02-01T23:59:59.000Z

    Recent progress on semiconductor lasers having a very high direct modulation bandwidth of beyond 10 GHz are described. Issues related to application of these lasers in actual systems are addressed. Possibilities of further extending the bandwidth of semiconductor lasers are examined.

  5. Preparation of a semiconductor thin film

    DOE Patents [OSTI]

    Pehnt, Martin (TuBingen, DE); Schulz, Douglas L. (Denver, CO); Curtis, Calvin J. (Lakewood, CO); Ginley, David S. (Evergreen, CO)

    1998-01-01T23:59:59.000Z

    A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

  6. Stable surface passivation process for compound semiconductors

    DOE Patents [OSTI]

    Ashby, Carol I. H. (Edgewood, NM)

    2001-01-01T23:59:59.000Z

    A passivation process for a previously sulfided, selenided or tellurated III-V compound semiconductor surface. The concentration of undesired mid-gap surface states on a compound semiconductor surface is reduced by the formation of a near-monolayer of metal-(sulfur and/or selenium and/or tellurium)-semiconductor that is effective for long term passivation of the underlying semiconductor surface. Starting with the III-V compound semiconductor surface, any oxidation present thereon is substantially removed and the surface is then treated with sulfur, selenium or tellurium to form a near-monolayer of chalcogen-semiconductor of the surface in an oxygen-free atmosphere. This chalcogenated surface is then contacted with a solution of a metal that will form a low solubility chalcogenide to form a near-monolayer of metal-chalcogen-semiconductor. The resulting passivating layer provides long term protection for the underlying surface at or above the level achieved by a freshly chalcogenated compound semiconductor surface in an oxygen free atmosphere.

  7. Hybrid anode for semiconductor radiation detectors

    DOE Patents [OSTI]

    Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

    2013-11-19T23:59:59.000Z

    The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

  8. Semiconductor switch geometry with electric field shaping

    DOE Patents [OSTI]

    Booth, Rex (Livermore, CA); Pocha, Michael D. (Livermore, CA)

    1994-01-01T23:59:59.000Z

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

  9. Semiconductor switch geometry with electric field shaping

    DOE Patents [OSTI]

    Booth, R.; Pocha, M.D.

    1994-08-23T23:59:59.000Z

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium. 10 figs.

  10. Novel room temperature ferromagnetic semiconductors

    SciTech Connect (OSTI)

    Gupta, Amita

    2004-11-01T23:59:59.000Z

    Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous distribution of Mn substituting for Zn a 2+ state in the ZnO lattice. Ferromagnetic Resonance (FMR) technique is used to confirm the existence of ferromagnetic ordering at temperatures as high as 425K. The ab initio calculations were found to be consistent with the observation of ferromagnetism arising from fully polarized Mn 2+ state. The key to observed room temperature ferromagnetism in this system is the low temperature processing, which prevents formation of clusters, secondary phases and the host ZnO from becoming n-type. The electronic structure of the same Mn doped ZnO thin films studied using XAS, XES and RIXS, revealed a strong hybridization between Mn 3d and O 2p states, which is an important characteristic of a Dilute magnetic Semiconductor (DMS). It is shown that the various processing conditions like sintering temperature, dopant concentration and the properties of precursors used for making of DMS have a great influence on the final properties. Use of various experimental techniques to verify the physical properties, and to understand the mechanism involved to give rise to ferromagnetism is presented. Methods to improve the magnetic moment in Mn doped ZnO are also described. New promising DMS materials (such as Cu doped ZnO are explored). The demonstrated new capability to fabricate powder, pellets, and thin films of room temperature ferromagnetic semiconductors thus makes possible the realization of a wide range of complex elements for a variety of new multifunctional phenomena related to Spintronic devices as well as magneto-optic components.

  11. Cosmological Models with Nonlinearity of Scalar Field Induced by Yang-Mills Field

    E-Print Network [OSTI]

    V. K. Shchigolev; M. V. Shchigolev

    2000-11-24T23:59:59.000Z

    The exact solutions of Einstein - Yang - Mills and interacting with SO (3) - Yang-Mills field nonlinear scalar field equations in a class of spatially homogeneous cosmological Friedmann models are obtained.

  12. Inorganic Chemistry Solutions to Semiconductor Nanocrystal Problems

    SciTech Connect (OSTI)

    Alvarado, Samuel R. [Ames Laboratory; Guo, Yijun [Ames Laboratory; Ruberu, T. Purnima A. [Ames Laboratory; Tavasoli, Elham [Ames Laboratory; Vela, Javier [Ames Laboratory

    2014-03-15T23:59:59.000Z

    The optoelectronic and chemical properties of semiconductor nanocrystals heavily depend on their composition, size, shape and internal structure, surface functionality, etc. Available strategies to alter these properties through traditional colloidal syntheses and ligand exchange methods place a premium on specific reaction conditions and surfactant combinations. In this invited review, we apply a molecular-level understanding of chemical precursor reactivity to reliably control the morphology, composition and intimate architecture (core/shell vs. alloyed) of semiconductor nanocrystals. We also describe our work aimed at achieving highly selective, low-temperature photochemical methods for the synthesis of semiconductor–metal and semiconductor–metal oxide photocatalytic nanocomposites. In addition, we describe our work on surface modification of semiconductor nanocrystal quantum dots using new approaches and methods that bypass ligand exchange, retaining the nanocrystal's native ligands and original optical properties, as well as on spectroscopic methods of characterization useful in determining surface ligand organization and chemistry. Using recent examples from our group and collaborators, we demonstrate how these efforts have lead to faster, wider and more systematic application of semiconductor nanocrystal-based materials to biological imaging and tracking, and to photocatalysis of unconventional substrates. We believe techniques and methods borrowed from inorganic chemistry (including coordination, organometallic and solid state chemistry) have much to offer in reaching a better understanding of the synthesis, functionalization and real-life application of such exciting materials as semiconductor nanocrystals (quantum dots, rods, tetrapods, etc.).

  13. Transport Equations for Semiconductors Prof. Dr. Ansgar Jungel

    E-Print Network [OSTI]

    Jüngel, Ansgar

    - cations have been invented; for instance, semiconductor lasers, solar cells, light-emitting diodes (LED

  14. Kinetic and Macroscopic Models for Semiconductors Ansgar Jungel

    E-Print Network [OSTI]

    Jüngel, Ansgar

    Kinetic and Macroscopic Models for Semiconductors Ansgar J¨ungel Vienna University of Technology, Austria www.jungel.at.vu Ansgar J¨ungel (TU Wien) Kinetic Semiconductor Models www.jungel.at.vu 1 / 165 #12;Contents 1 Introduction 2 Semiconductor modeling Basics of semiconductor physics Kinetic models 3

  15. EEE 6397 Semiconductor Device Theory (Fall, 2014, 5th

    E-Print Network [OSTI]

    Fang, Yuguang "Michael"

    1 EEE 6397 Semiconductor Device Theory (Fall, 2014, 5th period MWF, BEN328) Goals: (1) Develop fundamental understanding on the device physics of the most important semiconductor devices, such as PN junctions, metal-semiconductor contacts, metal-oxide-semiconductor capacitors, and field-effect transistors

  16. Heating device for semiconductor wafers

    DOE Patents [OSTI]

    Vosen, S.R.

    1999-07-27T23:59:59.000Z

    An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernible pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light. 4 figs.

  17. Heating device for semiconductor wafers

    DOE Patents [OSTI]

    Vosen, Steven R. (Berkeley, CA)

    1999-01-01T23:59:59.000Z

    An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernable pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

  18. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    DOE Patents [OSTI]

    Yang, Peidong (El Cerrito, CA); Choi, Heonjin (Seoul, KR); Lee, Sangkwon (Daejeon, KR); He, Rongrui (Albany, CA); Zhang, Yanfeng (El Cerrito, CA); Kuykendal, Tevye (Berkeley, CA); Pauzauskie, Peter (Berkeley, CA)

    2011-08-23T23:59:59.000Z

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  19. Yang-Mills Radiation in Ultra-relativistic Nuclear Collisions

    E-Print Network [OSTI]

    Miklos Gyulassy; Larry McLerran

    1997-04-16T23:59:59.000Z

    The classical Yang-Mills radiation computed in the McLerran-Venugopalan model is shown to be equivalent to the gluon bremsstrahlung distribution to lowest order in pQCD. The classical distribution is also shown to match smoothly onto the conventional pQCD mini-jet distribution at a scale characteristic of the initial parton transverse density of the system. The atomic number and energy dependence of that scale is computed from available structure function information. The limits of applicability of the classical Yang-Mills description of nuclear collisions at RHIC and LHC energies are discussed.

  20. 5D Yang-Mills instantons from ABJM Monopoles

    E-Print Network [OSTI]

    N. Lambert; H. Nastase; C. Papageorgakis

    2012-02-08T23:59:59.000Z

    In the presence of a background supergravity flux, N M2-branes will expand via the Myers effect into M5-branes wrapped on a fuzzy three-sphere. In previous work the fluctuations of the M2-branes were shown to be described by the five-dimensional Yang-Mills gauge theory associated to D4-branes. We show that the ABJM prescription for eleven-dimensional momentum in terms of magnetic flux lifts to an instanton flux of the effective five-dimensional Yang-Mills theory on the sphere, giving an M-theory interpretation for these instantons.

  1. Equivariance on Discrete Space and Yang-Mills-Higgs Model

    E-Print Network [OSTI]

    Ikemori, Hitoshi; Matsui, Yoshimitsu; Otsu, Hideharu; Sato, Toshiro

    2015-01-01T23:59:59.000Z

    We introduce the basic equivariant quantity $Q$ in the gauge theory on the noncommutative descrete $Z_{2}$ space, which plays an important role for the equivariant dimensional reduction. If the gauge configuration of the ground state on the extra dimensional space is described by the equivariant $Q$, then the extra dimensional space is invisible. Especially, using the equivariance principle, we show that the Yang-Mills theory on $R^{2}\\times Z_{2}$ space is equivalent to the Yang-Mills-Higgs model on $R^{2}$ space. It can be said that this model is the simplest model of this type.

  2. Equivariance on Discrete Space and Yang-Mills-Higgs Model

    E-Print Network [OSTI]

    Hitoshi Ikemori; Shinsaku Kitakado; Yoshimitsu Matsui; Hideharu Otsu; Toshiro Sato

    2015-04-07T23:59:59.000Z

    We introduce the basic equivariant quantity $Q$ in the gauge theory on the noncommutative descrete $Z_{2}$ space, which plays an important role for the equivariant dimensional reduction. If the gauge configuration of the ground state on the extra dimensional space is described by the equivariant $Q$, then the extra dimensional space is invisible. Especially, using the equivariance principle, we show that the Yang-Mills theory on $R^{2}\\times Z_{2}$ space is equivalent to the Yang-Mills-Higgs model on $R^{2}$ space. It can be said that this model is the simplest model of this type.

  3. Spin injection and manipulation in organic semiconductors

    E-Print Network [OSTI]

    Venkataraman, Karthik (Karthik Raman)

    2011-01-01T23:59:59.000Z

    The use of organic semiconductors to enable organic spintronic devices requires the understanding of transport and control of the spin state of the carriers. This thesis deals with the above issue, focusing on the interface ...

  4. Electrical Usage Characterization of Semiconductor Processing Tools

    E-Print Network [OSTI]

    Hinson, S. R.

    This paper presents the basic concepts in performing an energy and power audit of a semiconductor process tool. A protocol exists that fully describes these measurements and their use and applicability and it will be described. This protocol...

  5. Sandia National Laboratories: wide-bandgap semiconductor

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    electroluminescence was first reported by H.J. Round in 1907, and the first light-emitting diode (LED) was reported by O.V. Losev in 1927. Not until the birth of semiconductor...

  6. NANOSTRUCTURES, MAGNETIC SEMICONDUCTORS AND SPINELECTRONICS Paata Kervalishvili

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    to data storage, switching, lighting and other devices, can lead to substantially new hardwareNANOSTRUCTURES, MAGNETIC SEMICONDUCTORS AND SPINELECTRONICS Paata Kervalishvili Georgian Technical and manipulation on a nanometre scale, which allows the fabrication of nanostructures with the properties mainly

  7. Narrow band gap amorphous silicon semiconductors

    DOE Patents [OSTI]

    Madan, A.; Mahan, A.H.

    1985-01-10T23:59:59.000Z

    Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

  8. Surface phonons of III-V semiconductors

    E-Print Network [OSTI]

    Das, Pradip Kumar

    1994-01-01T23:59:59.000Z

    are the simplest of all semiconductor surfaces. Their atomic relaxations and electronic surface states are rather well understood. There have, however, been surprisingly few experimental studies of their vibrational properties, and ours in the first detailed...

  9. Semiconductor-nanocrystal/conjugated polymer thin films

    DOE Patents [OSTI]

    Alivisatos, A. Paul (Oakland, CA); Dittmer, Janke J. (Munich, DE); Huynh, Wendy U. (Munich, DE); Milliron, Delia (Berkeley, CA)

    2010-08-17T23:59:59.000Z

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  10. EXCITONIC EIGENSTATES OF DISORDERED SEMICONDUCTOR QUANTUM WIRES

    E-Print Network [OSTI]

    of semiconductors are exploited in solar cells, light emitting diodes, and lasers, and, furthermore, future UNIVERSITY OF MINNESOTA 400 Lind Hall 207 Church Street S.E. Minneapolis, Minnesota 55455­0436 Phone: 612

  11. Science and applications of infrared semiconductor nanocrystals

    E-Print Network [OSTI]

    Geyer, Scott Mitchell

    2010-01-01T23:59:59.000Z

    In this work we study several applications of semiconductor nanocrystals (NCs) with infrared band gaps. In the first half, we explore the physics of two systems with applications in NC based photovoltaics. The physics of ...

  12. Nanopatterned Electrically Conductive Films of Semiconductor Nanocrystals

    E-Print Network [OSTI]

    Mentzel, Tamar

    We present the first semiconductor nanocrystal films of nanoscale dimensions that are electrically conductive and crack-free. These films make it possible to study the electrical properties intrinsic to the nanocrystals ...

  13. Thermovoltaic semiconductor device including a plasma filter

    DOE Patents [OSTI]

    Baldasaro, Paul F. (Clifton Park, NY)

    1999-01-01T23:59:59.000Z

    A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

  14. Fabrication of Semiconductors by Wet Chemical Etch

    E-Print Network [OSTI]

    Francoviglia, Laura

    2008-07-01T23:59:59.000Z

    - ern devices. Beginning with Bardeen, Brittain and Shockley’s invention of the transistor in Bell Labs in 1947 and Kilby and Noyce’s introduction of the integrated circuit about a decade later, semiconductor devices have dramat- ically advanced... ad- dition of impurities, their conductivity can be altered. With the need to manu- facture devices at the micro- and nano- scale, the semiconductor industry has followed “Moore’s Law,” the trend that the number of transistors placed...

  15. Optical temperature indicator using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, J.W.

    1995-01-01T23:59:59.000Z

    A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

  16. A Semiconductor Microlaser for Intracavity Flow Cytometry

    SciTech Connect (OSTI)

    Akhil, O.; Copeland, G.C.; Dunne, J.L.; Gourley, P.L.; Hendricks, J.K.; McDonald, A.E.

    1999-01-20T23:59:59.000Z

    Semiconductor microlasers are attractive components for micro-analysis systems because of their ability to emit coherent intense light from a small aperture. By using a surface-emitting semiconductor geometry, we were able to incorporate fluid flow inside a laser microcavity for the first time. This confers significant advantages for high throughput screening of cells, particulates and fluid analytes in a sensitive microdevice. In this paper we discuss the intracavity microfluidics and present preliminary results with flowing blood and brain cells.

  17. Optical temperature sensor using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, James W. (Aiken, SC)

    1998-01-01T23:59:59.000Z

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card.

  18. Optical temperature sensor using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, James W. (108 Independent Blvd., Aiken, SC 29801)

    1996-01-01T23:59:59.000Z

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit.

  19. Optical devices featuring nonpolar textured semiconductor layers

    DOE Patents [OSTI]

    Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

    2013-11-26T23:59:59.000Z

    A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

  20. Optical temperature indicator using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, James W. (108 Independent Blvd., Aiken, SC 29801)

    1996-01-01T23:59:59.000Z

    A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

  1. Optical temperature sensor using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, J.W.

    1996-08-20T23:59:59.000Z

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit. 7 figs.

  2. Optical temperature sensor using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, J.W.

    1998-06-30T23:59:59.000Z

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card. 8 figs.

  3. Dong, A., E. Fixler and A.M. Agogino, "A Case Study of Policy Decisions for Federated Search Across Digital Libraries," Proceedings of ICDL 2004 (International Conference on Digital Libraries), The

    E-Print Network [OSTI]

    Agogino, Alice M.

    Case Study of Policy Decisions for Federated Search Across Digital Libraries," Proceedings of ICDL 2004 (International Conference on Digital Libraries), The Energy and Resources Institute, Vol. 2, 892- 898, 2004. A Case Study of Policy Decisions for Federated Search Across Digital Libraries Andy Dong University

  4. Ultrafast Control of Magnetism in Ferromagnetic Semiconductors via Photoexcited Transient Carriers

    E-Print Network [OSTI]

    Cotoros, Ingrid A.

    2009-01-01T23:59:59.000Z

    1.2 Overview of semiconductor2.2 Dilute magnetic semiconductors . . . . . . . . .generated holes in (In,Mn)As Magnetic semiconductor FET

  5. Electron gas grid semiconductor radiation detectors

    DOE Patents [OSTI]

    Lee, Edwin Y. (Livermore, CA); James, Ralph B. (Livermore, CA)

    2002-01-01T23:59:59.000Z

    An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

  6. Fundamental Models for Fuel Cell Engineering Chao-Yang Wang*

    E-Print Network [OSTI]

    Diagnostics 4757 4.4. Model Validation 4758 4.5. Summary and Outlook 4760 5. Solid Oxide Fuel Cells 4760 5Fundamental Models for Fuel Cell Engineering Chao-Yang Wang* Departments of Mechanical Engineering Fuel Cell Dynamics 4727 2.1. CFCD Model Equations 4728 2.2. Computational Aspects 4729 2.2.1. General

  7. Hamilton approach to Yang-Mills theory in Coulomb gauge

    E-Print Network [OSTI]

    Reinhardt, H; Epple, D; Feuchter, C

    2007-01-01T23:59:59.000Z

    The vacuum wave functional of Coulomb gauge Yang-Mills theory is determined within the variational principle and used to calculate various Green functions and observables. The results show that heavy quarks are confined by a linearly rising potential and gluons cannot propagate over large distances. The 't Hooft loop shows a perimeter law and thus also indicates confinement.

  8. Weekly Report Lin Yang 07/08/2012

    E-Print Network [OSTI]

    Rohs, Remo

    Weekly Report Lin Yang 07/08/2012 Updated figures for the ISMB poster Two figures were updated on my local machine instead of using data received from Tullius' lab. And Orchid2 prediction for P . This should be implementing the first stage described in the "20120701_Lin" report. The website will provide

  9. Nanostructured Thermoelectric Materials: From Superlattices to Nanocomposites Ronggui Yang1

    E-Print Network [OSTI]

    Chen, Gang

    Nanostructured Thermoelectric Materials: From Superlattices to Nanocomposites Ronggui Yang1 conductivity led to a large increase in the thermoelectric figure of merit in several superlattice systems. Materials with a large thermoelectric figure of merit can be used to develop efficient solid-state devices

  10. Einstein-Yang-Mills theory : I. Asymptotic symmetries

    E-Print Network [OSTI]

    Glenn Barnich; Pierre-Henry Lambert

    2013-10-10T23:59:59.000Z

    Asymptotic symmetries of the Einstein-Yang-Mills system with or without cosmological constant are explicitly worked out in a unified manner. In agreement with a recent conjecture, one finds a Virasoro-Kac-Moody type algebra not only in three dimensions but also in the four dimensional asymptotically flat case.

  11. Lattice Gauge Fields and Discrete Noncommutative Yang-Mills Theory

    E-Print Network [OSTI]

    J. Ambjorn; Y. M. Makeenko; J. Nishimura; R. J. Szabo

    2000-04-21T23:59:59.000Z

    We present a lattice formulation of noncommutative Yang-Mills theory in arbitrary even dimensionality. The UV/IR mixing characteristic of noncommutative field theories is demonstrated at a completely nonperturbative level. We prove a discrete Morita equivalence between ordinary Yang-Mills theory with multi-valued gauge fields and noncommutative Yang-Mills theory with periodic gauge fields. Using this equivalence, we show that generic noncommutative gauge theories in the continuum can be regularized nonperturbatively by means of {\\it ordinary} lattice gauge theory with 't~Hooft flux. In the case of irrational noncommutativity parameters, the rank of the gauge group of the commutative lattice theory must be sent to infinity in the continuum limit. As a special case, the construction includes the recent description of noncommutative Yang-Mills theories using twisted large $N$ reduced models. We study the coupling of noncommutative gauge fields to matter fields in the fundamental representation of the gauge group using the lattice formalism. The large mass expansion is used to describe the physical meaning of Wilson loops in noncommutative gauge theories. We also demonstrate Morita equivalence in the presence of fundamental matter fields and use this property to comment on the calculation of the beta-function in noncommutative quantum electrodynamics.

  12. On Revealed Preference and Indivisibilities Satoru FUJISHIGE and Zaifu YANG

    E-Print Network [OSTI]

    Preference and Indivisibilities1 Satoru Fujishige2 and Zaifu Yang3 Abstract: We consider a market model traded in discrete quantities, such as oil sold in barrels. Obviously, modeling economies-satiation become meaningless in the current discrete model, by refining the standard notion of demand set we show

  13. On Revealed Preference and Indivisibilities Satoru FUJISHIGE and Zaifu YANG

    E-Print Network [OSTI]

    Preference and Indivisibilities 1 Satoru Fujishige 2 and Zaifu Yang 3 Abstract: We consider a market model traded in discrete quantities, such as oil sold in barrels. Obviously, modeling economies­satiation become meaningless in the current discrete model, by refining the standard notion of demand set we show

  14. Optimization Models for Shale Gas Water Management Linlin Yang

    E-Print Network [OSTI]

    Grossmann, Ignacio E.

    Optimization Models for Shale Gas Water Management Linlin Yang , Jeremy Manno and Ignacio E. Grossmann Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA Carrizo Oil & Gas and multiple scenarios from historical data. Two examples representative of the Marcellus Shale play

  15. Spin Transport in Semiconductor heterostructures

    SciTech Connect (OSTI)

    Domnita Catalina Marinescu

    2011-02-22T23:59:59.000Z

    The focus of the research performed under this grant has been the investigation of spin transport in magnetic semiconductor heterostructures. The interest in these systems is motivated both by their intriguing physical properties, as the physical embodiment of a spin-polarized Fermi liquid, as well as by their potential applications as spintronics devices. In our work we have analyzed several different problems that affect the spin dynamics in single and bi-layer spin-polarized two-dimensional (2D) systems. The topics of interests ranged from the fundamental aspects of the electron-electron interactions, to collective spin and charge density excitations and spin transport in the presence of the spin-orbit coupling. The common denominator of these subjects is the impact at the macroscopic scale of the spin-dependent electron-electron interaction, which plays a much more subtle role than in unpolarized electron systems. Our calculations of several measurable parameters, such as the excitation frequencies of magneto-plasma modes, the spin mass, and the spin transresistivity, propose realistic theoretical estimates of the opposite-spin many-body effects, in particular opposite-spin correlations, that can be directly connected with experimental measurements.

  16. Dissipative chaos in semiconductor superlattices

    SciTech Connect (OSTI)

    Alekseev, K.N.; Berman, G.P. [Center for Nonlinear Studies and Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [Center for Nonlinear Studies and Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); [Kirensky Institute of Physics, 660036, Krasnoyarsk (Russia); [Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801-3080 (United States); Campbell, D.K.; Cannon, E.H.; Cargo, M.C. [Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801-3080 (United States)] [Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801-3080 (United States)

    1996-10-01T23:59:59.000Z

    We consider the motion of ballistic electrons in a miniband of a semiconductor superlattice (SSL) under the influence of an external, time-periodic electric field. We use a semiclassical, balance-equation approach, which incorporates elastic and inelastic scattering (as dissipation) and the self-consistent field generated by the electron motion. The coupling of electrons in the miniband to the self-consistent field produces a cooperative nonlinear oscillatory mode which, when interacting with the oscillatory external field and the intrinsic Bloch-type oscillatory mode, can lead to complicated dynamics, including dissipative chaos. For a range of values of the dissipation parameters we determine the regions in the amplitude-frequency plane of the external field in which chaos can occur. Our results suggest that for terahertz external fields of the amplitudes achieved by present-day free-electron lasers, chaos may be observable in SSL{close_quote}s. We clarify the nature of this interesting nonlinear dynamics in the superlattice{endash}external-field system by exploring analogies to the Dicke model of an ensemble of two-level atoms coupled with a resonant cavity field, and to Josephson junctions. {copyright} {ital 1996 The American Physical Society.}

  17. Atomic-resolution study of Mn tetramer clusters using scanning tunneling Rong Yang, Haiqiang Yang, and Arthur R. Smitha

    E-Print Network [OSTI]

    Atomic-resolution study of Mn tetramer clusters using scanning tunneling microscopy Rong Yang clusters is investigated. The clusters are composed of a quadrant array of Mn atoms forming a tetramer of manganese nitride, on which are stabilized peri- odic, self-organized array of MnN-bonded Mn tetramer clus

  18. Method for removing semiconductor layers from salt substrates

    DOE Patents [OSTI]

    Shuskus, Alexander J. (West Hartford, CT); Cowher, Melvyn E. (East Brookfield, MA)

    1985-08-27T23:59:59.000Z

    A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.

  19. Extracting hot carriers from photoexcited semiconductor nanocrystals

    SciTech Connect (OSTI)

    Zhu, Xiaoyang

    2014-12-10T23:59:59.000Z

    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  20. Light sources based on semiconductor current filaments

    DOE Patents [OSTI]

    Zutavern, Fred J. (Albuquerque, NM); Loubriel, Guillermo M. (Albuquerque, NM); Buttram, Malcolm T. (Sandia Park, NM); Mar, Alan (Albuquerque, NM); Helgeson, Wesley D. (Albuquerque, NM); O'Malley, Martin W. (Edgewood, NM); Hjalmarson, Harold P. (Albuquerque, NM); Baca, Albert G. (Albuquerque, NM); Chow, Weng W. (Cedar Crest, NM); Vawter, G. Allen (Albuquerque, NM)

    2003-01-01T23:59:59.000Z

    The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

  1. Optical spin orientation of a single manganese atom in a semiconductor quantum dot using quasi-resonant excitation

    E-Print Network [OSTI]

    Boyer, Edmond

    of these mem- ories. Dilute magnetic semiconductors (DMS) systems combining semiconductor heterostructures

  2. Antiferromagnetic exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal

    E-Print Network [OSTI]

    Olejnik, K.

    2010-01-01T23:59:59.000Z

    exchange bias of a magnetic semiconductor by a magneticexchange bias in the magnetic semiconductor. The shape and

  3. Semiconductor nanowires for future electronics : growth, characterization, device fabrication, and integration

    E-Print Network [OSTI]

    Dayeh, Shadi A.

    2008-01-01T23:59:59.000Z

    1 1.1 Introduction to Semiconductorin InAs Semiconductor Nanowires. . . . . . . . . . . . .Comparison of different semiconductor NWFETs (non-passivated

  4. Suchuan Dong: home

    E-Print Network [OSTI]

    Research interest: high-order numerical methods, algorithms for dynamic simulations, high performance computing, fundamental fluids- and solids-related

  5. Suchuan Dong's Home Page

    E-Print Network [OSTI]

    Center for Computational and Applied Mathematics Department of Mathematics ... Ph.D., Mechanical Engineering, State University of New York at Buffalo, 2001. M.S. ... High-order methods and temporal algorithms for simulations of fluids- and

  6. dong-98.pdf

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron4 Self-Scrubbing:,, , ., ..., ,+ .-detonation7 Comparison of Stratus1

  7. dong-99.PDF

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron4 Self-Scrubbing:,, , ., ..., ,+ .-detonation7 Comparison of

  8. Substrate solder barriers for semiconductor epilayer growth

    DOE Patents [OSTI]

    Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

    1987-10-23T23:59:59.000Z

    During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In molecular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating. 1 tab.

  9. Substrate solder barriers for semiconductor epilayer growth

    DOE Patents [OSTI]

    Drummond, Timothy J. (Tijeras, NM); Ginley, David S. (Albuquerque, NM); Zipperian, Thomas E. (Albuquerque, NM)

    1989-01-01T23:59:59.000Z

    During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

  10. Substrate solder barriers for semiconductor epilayer growth

    DOE Patents [OSTI]

    Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

    1989-05-09T23:59:59.000Z

    During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

  11. Codoped direct-gap semiconductor scintillators

    DOE Patents [OSTI]

    Derenzo, Stephen Edward (Pinole, CA); Bourret-Courchesne, Edith (Berkeley, CA); Weber, Marvin J. (Danville, CA); Klintenberg, Mattias K. (Berkeley, CA)

    2008-07-29T23:59:59.000Z

    Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

  12. Two-Photon Emission from Semiconductors

    E-Print Network [OSTI]

    Alex Hayat; Pavel Ginzburg; Meir Orenstein

    2007-10-25T23:59:59.000Z

    We report the first experimental observations of two-photon emission from semiconductors, to the best of our knowledge, and develop a corresponding theory for the room-temperature process. Spontaneous two-photon emission is demonstrated in optically-pumped bulk GaAs and in electrically-driven GaInP/AlGaInP quantum wells. Singly-stimulated two-photon emission measurements demonstrate the theoretically predicted two-photon optical gain in semiconductors - a necessary ingredient for any realizations of future two-photon semiconductor lasers. Photon-coincidence experiment validates the simultaneity of the electrically-driven GaInP/AlGaInP two-photon emission, limited only by detector's temporal resolution.

  13. Codoped direct-gap semiconductor scintillators

    DOE Patents [OSTI]

    Derenzo, Stephen E.; Bourret-Courchesne, Edith; Weber, Marvin J.; Klintenberg, Mattias K.

    2006-05-23T23:59:59.000Z

    Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

  14. Electroluminescence in ion gel gated organic polymer semiconductor transistors

    E-Print Network [OSTI]

    Bhat, Shrivalli

    2011-07-12T23:59:59.000Z

    This thesis reports the light emission in ion gel gated, thin film organic semiconductor transistors and investigates the light emission mechanism behind these devices. We report that ion gel gated organic polymer semiconductor transistors emit...

  15. Lattice mismatched compound semiconductors and devices on silicon

    E-Print Network [OSTI]

    Yang, Li, Ph. D. Massachusetts Institute of Technology

    2011-01-01T23:59:59.000Z

    III-V compound semiconductors, due to their superior electron mobility, are promising candidates for n-type metal-oxide-semiconductor field effect transistors (MOSFETs). However, the limited size of III-V substrates and ...

  16. Radio frequency identification (RFID) applications in semiconductor manufacturing

    E-Print Network [OSTI]

    Cassett, David Ian, 1971-

    2004-01-01T23:59:59.000Z

    Radio frequency identification (RFID) has an enormous potential impact within the semiconductor supply chain, especially within semiconductor manufacturing. The end benefit of RFID will be in the mass serialization, and ...

  17. A New Cleanroom for a Next-Generation Semiconductor Research...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A New Cleanroom for a Next-Generation Semiconductor Research Tool A New Cleanroom for a Next-Generation Semiconductor Research Tool Print The new Sector 12 cleanroom under...

  18. A study of corporate entrepreneurship in the semiconductor industry

    E-Print Network [OSTI]

    Tallapureddy, Anish R

    2014-01-01T23:59:59.000Z

    The number of semiconductor companies receiving venture funding has been decreasing through-out the last decade. The economics of manufacturing semiconductors do not offer an attractive risk-reward profile to the traditional ...

  19. Course Information --EE 531 Semiconductor Devices and Device Simulation

    E-Print Network [OSTI]

    Hochberg, Michael

    of Semiconductor Devices" by Hess "Si Processing for the VLSI Era: Vol. 3-- The Submicron MOSFET" by Wolf "Advanced: 20% Exam 1: 30% Exam 2: 30% Project: 20% Prerequisite: Semiconductor Devices (EE 482) or equivalent

  20. High-Throughput Transfer Imprinting for Organic Semiconductors

    E-Print Network [OSTI]

    Choo, Gihoon

    2013-08-06T23:59:59.000Z

    semiconductors because heat and pressure used in thermal nanoimprint do not damage functional materials. However, issues such as residual layer removal and mold contamination still limit the application of nanoimprint for organic semiconductor patterning...

  1. Surface passivation process of compound semiconductor material using UV photosulfidation

    DOE Patents [OSTI]

    Ashby, Carol I. H. (Edgewood, NM)

    1995-01-01T23:59:59.000Z

    A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

  2. Acoustoelectric Harmonic Generation in a Photoconductive Piezoelectric Semiconductor

    E-Print Network [OSTI]

    Acoustoelectric Harmonic Generation in a Photoconductive Piezoelectric Semiconductor W. Arthur, R harmonics in the low frequency regime (. Piezoelectric semiconductors can exhibit harmonic generation because of interactions between the acoustic

  3. Blasting detonators incorporating semiconductor bridge technology

    SciTech Connect (OSTI)

    Bickes, R.W. Jr.

    1994-05-01T23:59:59.000Z

    The enormity of the coal mine and extraction industries in Russia and the obvious need in both Russia and the US for cost savings and enhanced safety in those industries suggests that joint studies and research would be of mutual benefit. The author suggests that mine sites and well platforms in Russia offer an excellent opportunity for the testing of Sandia`s precise time-delay semiconductor bridge detonators, with the potential for commercialization of the detonators for Russian and other world markets by both US and Russian companies. Sandia`s semiconductor bridge is generating interest among the blasting, mining and perforation industries. The semiconductor bridge is approximately 100 microns long, 380 microns wide and 2 microns thick. The input energy required for semiconductor bridge ignition is one-tenth the energy required for conventional bridgewire devices. Because semiconductor bridge processing is compatible with other microcircuit processing, timing and logic circuits can be incorporated onto the chip with the bridge. These circuits can provide for the precise timing demanded for cast effecting blasting. Indeed tests by Martin Marietta and computer studies by Sandia have shown that such precise timing provides for more uniform rock fragmentation, less fly rock, reduce4d ground shock, fewer ground contaminants and less dust. Cost studies have revealed that the use of precisely timed semiconductor bridges can provide a savings of $200,000 per site per year. In addition to Russia`s vast mineral resources, the Russian Mining Institute outside Moscow has had significant programs in rock fragmentation for many years. He anticipated that collaborative studies by the Institute and Sandia`s modellers would be a valuable resource for field studies.

  4. Dry etching method for compound semiconductors

    DOE Patents [OSTI]

    Shul, R.J.; Constantine, C.

    1997-04-29T23:59:59.000Z

    A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

  5. High power semiconductor laser sources. Final report

    SciTech Connect (OSTI)

    Yariv, A.

    1989-01-01T23:59:59.000Z

    The main purpose of the research was to design and fabricate a surface-emitting semiconductor laser based on multi quantum-well amplification. During the contract period, the author succeeded in improving the basic quantum-well active medium so as to result in maximum gain for a given inversion density and analyzed the fabrication of GaAs/GaAlAs multilayer dielectric reflectors for providing the optical feedback to the surface-emitting semiconductor laser. He also made significant progress in the development of diffusion techniques to provide the p and n regions adjacent to the active region for carrier injection.

  6. Dry etching method for compound semiconductors

    DOE Patents [OSTI]

    Shul, Randy J. (Albuquerque, NM); Constantine, Christopher (Safety Harbor, FL)

    1997-01-01T23:59:59.000Z

    A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

  7. Global symmetries of Yang-Mills squared in various dimensions

    E-Print Network [OSTI]

    Anastasiou, A; Hughes, M J; Nagy, S

    2015-01-01T23:59:59.000Z

    Tensoring two on-shell super Yang-Mills multiplets in dimensions $D\\leq 10$ yields an on-shell supergravity multiplet, possibly with additional matter multiplets. Associating a (direct sum of) division algebra(s) $\\mathbb{D}$ with each dimension $3\\leq D\\leq 10$ we obtain formulae for the algebras $\\mathfrak{g}$ and $\\mathfrak{h}$ of the U-duality group $G$ and its maximal compact subgroup $H$, respectively, in terms of the internal global symmetry algebras of each super Yang-Mills theory. We extend our analysis to include supergravities coupled to an arbitrary number of matter multiplets by allowing for non-supersymmetric multiplets in the tensor product.

  8. Statistical mechanics of Yang-Mills classical mechanics

    SciTech Connect (OSTI)

    Bannur, Vishnu M. [Department of Physics, University of Calicut, Kerala-673 635 (India)

    2005-08-01T23:59:59.000Z

    Statistical mechanics (SM) of Yang-Mills classical mechanics is studied by using a toy model that resembles chaotic quartic oscillators. This nonlinear system attains the thermodynamic equilibrium not by collisions, which is generally assumed in SM, but by chaotic dynamics. This is a new mechanism of thermalization that may be relevent to the quark-gluon plasma (QGP) formation in relativistic heavy-ion collisions because the interactions governing QGP involve quantum chromodynamics (QCD), which is a Yang-Mills theory [SU(3)]. The thermalization time is estimated from the Lyapunov exponent. The Lyapunov exponent is evaluated using the recently developed monodromy matrix method. We also discuss the physical meaning of thermalization and SM in this system of few degrees in terms of chromo-electric and chromomagnetic fields. One of the consequence of thermalization, such as equipartition of energy and dynamical temperature, is also numerically verified.

  9. Method of physical vapor deposition of metal oxides on semiconductors

    DOE Patents [OSTI]

    Norton, David P. (Knoxville, TN)

    2001-01-01T23:59:59.000Z

    A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

  10. Semiconductor liquid crystal composition and methods for making the same

    DOE Patents [OSTI]

    Alivisatos, A. Paul; Li, Liang-shi

    2005-04-26T23:59:59.000Z

    Semiconductor liquid crystal compositions and methods for making such compositions are disclosed. One embodiment of the invention is directed to a liquid crystal composition including a solvent and semiconductor particles in the solvent. The solvent and the semiconductor particles are in an effective amount in the liquid crystal composition to form a liquid crystal phase.

  11. Quantum of optical absorption in two-dimensional semiconductors

    E-Print Network [OSTI]

    California at Irvine, University of

    Quantum of optical absorption in two-dimensional semiconductors Hui Fanga,b,c , Hans A. Bechteld semiconductor, where is the fine structure con- stant and nc is an optical local field correction factor quantitative examination of the intrinsic absorption properties of free-standing 2D semiconductor thin films

  12. Effects of Quantum Confinement on the Doping Limit of Semiconductor

    E-Print Network [OSTI]

    Wu, Junqiao

    Effects of Quantum Confinement on the Doping Limit of Semiconductor Nanowires D. R. Khanal,, Joanne concentrations in semiconductor nanowires. Our calculations are based on the amphoteric defect model, which describes the thermodynamic doping limit in semiconductors in terms of the compensation of external dopants

  13. Defects activated photoluminescence in two-dimensional semiconductors

    E-Print Network [OSTI]

    Wu, Junqiao

    Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China, 3, Berkeley, California 94720, United States. Point defects in semiconductors can trap free charge carriers

  14. Vacuum Structure of Yang-Mills Theory in Curved Spacetime

    E-Print Network [OSTI]

    Samuel J. Collopy

    2009-08-31T23:59:59.000Z

    The stability of the chromomagnetic Savvidy vacuum in QCD under the influence of positive Riemannian curvature is studied. The heat traces of the operators relevant to SO(2) gauge-invariant Yang-Mills fields and Faddeev-Popov ghosts are calculated on product spaces of S^2 and S^1 \\times S^1. It is shown that the chromomagnetic vacuum with covariantly constant chromomagnetic field is stable in a certain set of radii and field strengths.

  15. Analog Sauter-Schwinger effect in semiconductors

    E-Print Network [OSTI]

    Linder, Malte F

    2015-01-01T23:59:59.000Z

    We develop a 1+1-dimensional model of a semiconductor, which exhibits an analog of the nonperturbative electron-positron pair creation from the quantum vacuum via time-dependent external electric fields (Sauter-Schwinger effect). In the one-particle picture of the relativistic Dirac theory, pair production from the Dirac vacuum can be understood as the excitation of a Dirac sea electron into the upper energy continuum. The analog effect in the semiconductor model is the excitation of electrons from the valence band into the conduction band (electron-hole pair creation). We show that the underlying equations describing the excitation processes in both systems are in some cases formally equivalent. The critical electric field strength for the Sauter-Schwinger effect is much smaller in typical semiconductors than in Dirac theory due to the different physical scales. This fact makes analog systems like the semiconductor model promising candidates for the observation of the Sauter-Schwinger effect in the laborator...

  16. High resolution scintillation detector with semiconductor readout

    DOE Patents [OSTI]

    Levin, Craig S. (Santa Monica, CA); Hoffman, Edward J. (Los Angeles, CA)

    2000-01-01T23:59:59.000Z

    A novel high resolution scintillation detector array for use in radiation imaging such as high resolution Positron Emission Tomography (PET) which comprises one or more parallelepiped crystals with at least one long surface of each crystal being in intimate contact with a semiconductor photodetector such that photons generated within each crystal by gamma radiation passing therethrough is detected by the photodetector paired therewith.

  17. HYDROGEN LOCAL VIBRATIONAL MODES IN COMPOUND SEMICONDUCTORS

    E-Print Network [OSTI]

    McCluskey, Matthew

    HYDROGEN LOCAL VIBRATIONAL MODES IN COMPOUND SEMICONDUCTORS M.D. MCCLUSKEY* University) spectroscopy of hydrogen and deuterium in GaP, AlSb, ZnSe, and GaN has provided important information about the structures of dopant- hydrogen complexes and their interaction with the host lattice. In GaN:Mg, for example

  18. Organic conductive films for semiconductor electrodes

    DOE Patents [OSTI]

    Frank, A.J.

    1984-01-01T23:59:59.000Z

    According to the present invention, improved electrodes overcoated with conductive polymer films and preselected catalysts are provided. The electrodes typically comprise an inorganic semiconductor over-coated with a charge conductive polymer film comprising a charge conductive polymer in or on which is a catalyst or charge-relaying agent.

  19. Optical temperature sensor using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, J.W.

    1994-01-01T23:59:59.000Z

    Optical thermometry is a growing technological field which exploits the ability of certain materials to change their optical properties with temperature. A subclass of such materials are those which change their color as a reversible and reproducible function of temperature. These materials are thermochromic. This invention is a composition to measure temperature utilizing thermochromic semiconductors.

  20. Laterally coupled-cavity semiconductor lasers

    SciTech Connect (OSTI)

    Lang, R.J.; Yariv, A.; Salzman, J.

    1987-04-01T23:59:59.000Z

    The authors analyze the threshold behaviour or a pair of laterally coupled semiconductor lasers of different lengths. The predictions include longitudinal mode selectivity leading to single longitudinal mode operation with a periodicity determined by the length mismatch, and ripples in the equipower curves in the current plane due to carrier-induced index shifts. They present experimental measurements that confirm these predictions.

  1. Theory of longitudinal modes in semiconductor lasers

    SciTech Connect (OSTI)

    Lau, K.Y.; Yariv, A.

    1982-05-01T23:59:59.000Z

    A theory of longitudinal mode lasing spectrum of semiconductor lasers is developed which takes into account the nonuniform carrier and photon distributions and local gain spectrum shifts inside lasers with low end mirror reflectivities. The theory gives results consistent with observed longitudinal mode behavior in lasers with reduced facet reflectivity.

  2. Semiconductor Nanowire Optical Antenna Solar Absorbers

    E-Print Network [OSTI]

    Fan, Shanhui

    a clear, intuitive guidance for the design of efficient NW solar cells. The presented approach technology. KEYWORDS Solar cell, semiconductor nanowires, optical antennas, photon management, light trapping employing non-earth-abundant elements like indium (CuInGaSe or CIGS cells) or tellurium (CdTe cells

  3. Preparation of III-V semiconductor nanocrystals

    DOE Patents [OSTI]

    Alivisatos, A.P.; Olshavsky, M.A.

    1996-04-09T23:59:59.000Z

    Nanometer-scale crystals of III-V semiconductors are disclosed. They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline. 4 figs.

  4. Semiconductor laser with multiple lasing wavelengths

    DOE Patents [OSTI]

    Fischer, Arthur J.; Choquette, Kent D.; Chow, Weng W.

    2003-07-29T23:59:59.000Z

    A new class of multi-terminal vertical-cavity semiconductor laser components has been developed. These multi-terminal laser components can be switched, either electrically or optically, between distinct lasing wavelengths, or can be made to lase simultaneously at multiple wavelengths.

  5. Optimal Preventive Maintenance Scheduling in Semiconductor Manufacturing

    E-Print Network [OSTI]

    Marcus, Steven I.

    1 Optimal Preventive Maintenance Scheduling in Semiconductor Manufacturing Xiaodong Yao, Emmanuel on Control Applications in 2001. #12;2 Abstract Preventive Maintenance (PM) scheduling is a very challenging schedule with that of a baseline reference schedule are also presented. Index Terms preventive maintenance

  6. Semiconductor detectors with proximity signal readout

    SciTech Connect (OSTI)

    Asztalos, Stephen J. [XIA, LLC, Hayward, CA (United States)

    2014-01-30T23:59:59.000Z

    Semiconductor-based radiation detectors are routinely used for the detection, imaging, and spectroscopy of x-rays, gamma rays, and charged particles for applications in the areas of nuclear and medical physics, astrophysics, environmental remediation, nuclear nonproliferation, and homeland security. Detectors used for imaging and particle tracking are more complex in that they typically must also measure the location of the radiation interaction in addition to the deposited energy. In such detectors, the position measurement is often achieved by dividing or segmenting the electrodes into many strips or pixels and then reading out the signals from all of the electrode segments. Fine electrode segmentation is problematic for many of the standard semiconductor detector technologies. Clearly there is a need for a semiconductor-based radiation detector technology that can achieve fine position resolution while maintaining the excellent energy resolution intrinsic to semiconductor detectors, can be fabricated through simple processes, does not require complex electrical interconnections to the detector, and can reduce the number of required channels of readout electronics. Proximity electrode signal readout (PESR), in which the electrodes are not in physical contact with the detector surface, satisfies this need.

  7. Solid State Lighting Semiconductor Spectroscopy & Devices

    E-Print Network [OSTI]

    Strathclyde, University of

    and fluorescent lamps, are very inefficient in transforming energy into light. Due to upcoming problems in energy % of Earth's total power consumption is used for lighting! Figure 3: Earth at night from space. Evolution inside a semiconductor for light emission. Over 150 years ago... How to achieve white LEDs? Figure 5

  8. Preparation of III-V semiconductor nanocrystals

    DOE Patents [OSTI]

    Alivisatos, A. Paul (Berkeley, CA); Olshavsky, Michael A. (Brunswick, OH)

    1996-01-01T23:59:59.000Z

    Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.

  9. Analog Sauter-Schwinger effect in semiconductors

    E-Print Network [OSTI]

    Malte F. Linder; Ralf Schützhold

    2015-03-24T23:59:59.000Z

    We develop a 1+1-dimensional model of a semiconductor, which exhibits an analog of the nonperturbative electron-positron pair creation from the quantum vacuum via time-dependent external electric fields (Sauter-Schwinger effect). In the one-particle picture of the relativistic Dirac theory, pair production from the Dirac vacuum can be understood as the excitation of a Dirac sea electron into the upper energy continuum. The analog effect in the semiconductor model is the excitation of electrons from the valence band into the conduction band (electron-hole pair creation). We show that the underlying equations describing the excitation processes in both systems are in some cases formally equivalent. The critical electric field strength for the Sauter-Schwinger effect is much smaller in typical semiconductors than in Dirac theory due to the different physical scales. This fact makes analog systems like the semiconductor model promising candidates for the observation of the Sauter-Schwinger effect in the laboratory.

  10. E-Print Network 3.0 - air yang digunakan Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Validation of a Computational Fluid Dynamics Model for IAQ applications in Ice Rink Arenas Summary: Arenas Chunxin Yang1 , Philip Demokritou2* , Qingyan Chen1 and John...

  11. Bi-Se doped with Cu, p-type semiconductor

    DOE Patents [OSTI]

    Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

    2013-08-20T23:59:59.000Z

    A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

  12. Lattice matched semiconductor growth on crystalline metallic substrates

    DOE Patents [OSTI]

    Norman, Andrew G; Ptak, Aaron J; McMahon, William E

    2013-11-05T23:59:59.000Z

    Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a metal or metal alloy substrate having a crystalline surface with a known lattice parameter (a). The methods further include growing a crystalline semiconductor alloy layer on the crystalline substrate surface by coincident site lattice matched epitaxy. The semiconductor layer may be grown without any buffer layer between the alloy and the crystalline surface of the substrate. The semiconductor alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter (a). The semiconductor alloy may further be prepared to have a selected band gap.

  13. YANG ET AL. VOL. XXX ' NO. XX ' 000000 ' XXXX www.acsnano.org

    E-Print Network [OSTI]

    Wang, Zhong L.

    YANG ET AL. VOL. XXX ' NO. XX ' 000­000 ' XXXX www.acsnano.org A C XXXX American Chemical Society ARTICLE #12;YANG ET AL. VOL. XXX ' NO. XX ' 000­000 ' XXXX www.acsnano.org B energies, whichever

  14. Consistent perturbative light front formulation of Yang-Mills theories

    SciTech Connect (OSTI)

    Morara, M.; Soldati, R. [Dipartimento di Fisica 'A. Righi', Universita di Bologna (Italy); McCartor, G. [Department of Physics, SMU, Dallas, Texas (United States)

    1999-11-22T23:59:59.000Z

    It is shown how to obtain the consistent light front form quantization of a non-Abelian pure Yang-Mills theory (gluondynamics) in the framework of the standard perturbative approach. After a short review of the previous attempts in the light cone gauge A{sub -}=0, it is explained how the difficulties can be overcome after turning to the anti light cone gauge A{sub +}=0. In particular, the generating functional of the renormalized Green's functions turns out to be the same as in the conventional instant form approach, leading to the Mandelstam-Leibbrandt prescription for the free gluon propagator.

  15. Super-Yang-Mills theories on S4 x R

    E-Print Network [OSTI]

    Jungmin Kim; Seok Kim; Kimyeong Lee; Jaemo Park

    2014-07-04T23:59:59.000Z

    We construct super-Yang-Mills theories on S4 x R, S4 x S1 and S4 x interval with the field content of maximal SYM, coupled to boundary degrees in the last case. These theories provide building blocks of the `5d uplifts' of gauge theories on S4, obtained by compactifying the 6d (2,0) theory. We pay special attention to the N=2* theory on S4. We also explain how to construct maximal SYM on S5 x R, and clarify when SYM theories can be put on S^n x R.

  16. Fusion hierarchies for N = 4 superYang-Mills theory

    E-Print Network [OSTI]

    A. V. Belitsky

    2008-04-12T23:59:59.000Z

    We employ the analytic Bethe Anzats to construct eigenvalues of transfer matrices with finite-dimensional atypical representations in the auxiliary space for the putative long-range spin chain encoding anomalous dimensions of all composite single-trace gauge invariant operators of the maximally supersymmetric Yang-Mills theory. They obey an infinite fusion hierarchy which can be reduced to a finite set of integral relations for a minimal set of transfer matrices. This set is used to derive a finite systems of functional equations for eigenvalues of nested Baxter polynomials.

  17. Fate of Yang-Mills black hole in early Universe

    SciTech Connect (OSTI)

    Nakonieczny, Lukasz; Rogatko, Marek [Institute of Physics Maria Curie-Sklodowska University 20-031 Lublin, pl. Marii Curie-Sklodowskiej 1 (Poland)

    2013-02-21T23:59:59.000Z

    According to the Big Bang Theory as we go back in time the Universe becomes progressively hotter and denser. This leads us to believe that the early Universe was filled with hot plasma of elementary particles. Among many questions concerning this phase of history of the Universe there are questions of existence and fate of magnetic monopoles and primordial black holes. Static solution of Einstein-Yang-Mills system may be used as a toy model for such a black hole. Using methods of field theory we will show that its existence and regularity depend crucially on the presence of fermions around it.

  18. Classical paths for Yang-Mills field with fixed energy

    E-Print Network [OSTI]

    Michael Kuchiev

    2009-04-19T23:59:59.000Z

    A new classical solution for the SU(2) Yang-Mills theory, in which the Euclidean energy plays a role of a parameter is found. A correspondence between this solution and the known selfdual multi-instanton configuration, which has the topological charge N, is discussed, the number of parameters governing the new solution is found to be 8N+1. For negative energies the new solution is periodic in Euclidean time, for positive energies it exhibits the effect of localization, which states that the solution is completely described within a finite interval of time, for zero energy the found solution is reduced to a selfdual one.

  19. Shenzhen Heng Yang Solar Industrial Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit with form HistoryRistma AGShandong LusaShelby, Ohio:ShenyuShenzhenHeng Yang Solar

  20. Dali Yang er Hydropower Development Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual SiteofEvaluating A Potential Microhydro Site Jump(Redirected fromCXDPCDaguanDainipponDali Yang

  1. Women @ Energy: Ulrike Meier Yang | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742Energy China 2015ofDepartment of EnergyThePatricia Hoffman is theDr.Ulrike Meier Yang is

  2. Time-resolved THz studies of carrier dynamics in semiconductors, superconductors, and strongly-correlated electron materials

    E-Print Network [OSTI]

    Kaindl, Robert A

    2011-01-01T23:59:59.000Z

    correlation effects in semiconductors, Nature 411, 549-557,in optically excited semiconductors, Phys. Rev. B 54,and Terahertz Gain in Semiconductors Excited to Resonance,

  3. Proximity charge sensing for semiconductor detectors

    DOE Patents [OSTI]

    Luke, Paul N; Tindall, Craig S; Amman, Mark

    2013-10-08T23:59:59.000Z

    A non-contact charge sensor includes a semiconductor detector having a first surface and an opposing second surface. The detector includes a high resistivity electrode layer on the first surface and a low resistivity electrode on the high resistivity electrode layer. A portion of the low resistivity first surface electrode is deleted to expose the high resistivity electrode layer in a portion of the area. A low resistivity electrode layer is disposed on the second surface of the semiconductor detector. A voltage applied between the first surface low resistivity electrode and the second surface low resistivity electrode causes a free charge to drift toward the first or second surface according to a polarity of the free charge and the voltage. A charge sensitive preamplifier coupled to a non-contact electrode disposed at a distance from the exposed high resistivity electrode layer outputs a signal in response to movement of free charge within the detector.

  4. Semiconductor Probes of Light Dark Matter

    E-Print Network [OSTI]

    Peter W. Graham; David E. Kaplan; Surjeet Rajendran; Matthew T. Walters

    2012-11-12T23:59:59.000Z

    Dark matter with mass below about a GeV is essentially unobservable in conventional direct detection experiments. However, newly proposed technology will allow the detection of single electron events in semiconductor materials with significantly lowered thresholds. This would allow detection of dark matter as light as an MeV in mass. Compared to other detection technologies, semiconductors allow enhanced sensitivity because of their low ionization energy around an eV. Such detectors would be particularly sensitive to dark matter with electric and magnetic dipole moments, with a reach many orders of magnitude beyond current bounds. Observable dipole moment interactions can be generated by new particles with masses as great as 1000 TeV, providing a window to scales beyond the reach of current colliders.

  5. Optical cavity furnace for semiconductor wafer processing

    DOE Patents [OSTI]

    Sopori, Bhushan L.

    2014-08-05T23:59:59.000Z

    An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

  6. Broad-area tandem semiconductor laser

    SciTech Connect (OSTI)

    Chen, T.R.; Mehuys, D.; Zhuang, Y.H.; Mittelstein, M.; Wang, H.; Derry, P.L.; Kajanto, M.; Yariv, A.

    1988-10-17T23:59:59.000Z

    A tandem combination of a uniform gain broad-area semiconductor laser and a (lateral) periodic gain section displays a stable, near-diffraction-limited single-lobed far-field pattern. The GaAs/GaAlAs quantum well lasers display a high degree of coherence across 60-..mu..m-wide apertures provided that the broad-area section is sufficiently long.

  7. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23T23:59:59.000Z

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  8. Scanning probe microscopy studies of semiconductor surfaces

    SciTech Connect (OSTI)

    Weinberg, W.H. [Univ. of California, Santa Barbara, CA (United States)

    1996-10-01T23:59:59.000Z

    Recent work involving atomic force microscopy and scanning tunneling microscopy is discussed which involves strain-induced, self-assembling nanostructures in compound semiconductor materials. Specific examples include one-dimensional quantum wires of InAs grown by MBE on GaAs(001) and zero-dimensional quantum dots of InP grown by MOCVD on InGaP which is lattice matched to GaAs(001).

  9. Changhuei Yang 1200 E. California Blvd, MC: 136-96 e-mail: chyang@caltech.edu

    E-Print Network [OSTI]

    ) 4. Changhuei Yang, Kyungwon An, Lev T. Perelman, Adam Wax, Ramachandra R. Dasari and Michael S. Feld. Changhuei Yang, Adam Wax, Irene Georgakoudi, Eugene B. Hanlon, Kamran Badizadegan, Ramachandra R. Dasari). 6. Changhuei Yang, Adam Wax and Michael S. Feld; "Measurement of anomalous phase velocity

  10. Visible-wavelength semiconductor lasers and arrays

    DOE Patents [OSTI]

    Schneider, Jr., Richard P. (Albuquerque, NM); Crawford, Mary H. (Albuquerque, NM)

    1996-01-01T23:59:59.000Z

    A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

  11. 7/14/2004 World of Compound Semiconductors Page 1 of 191 TThhee WWoorrlldd

    E-Print Network [OSTI]

    7/14/2004 World of Compound Semiconductors Page 1 of 191 TThhee WWoorrlldd ooff CCoommppoouunndd ...... ---- ...... ---- ...... ---- ...... ---- ...... ---- ...... ---- ...... ---- #12;7/14/2004 World of Compound Semiconductors Page 2 of 191 0.1 Scope Compound III-V Semiconductors A new family of semiconductors is changing the way we live. These semiconductors are in our cell phones

  12. 1.0. Semiconductor Diodes 1 of 27 1.2 Ideal Diode

    E-Print Network [OSTI]

    Allen, Gale

    1.0. Semiconductor Diodes 1 of 27 1.2 Ideal Diode ID VD ID Open Circuit Short Circuit VD + - #12;1.0. Semiconductor Diodes 2 of 27 1.3 Semiconductor Materials Conductor Insulator Semiconductor R = (Resistivity Resistivity of a semiconductor decreases as temperature increases. ure coefficient.Negative temperat #12

  13. Photovoltaic healing of non-uniformities in semiconductor devices

    DOE Patents [OSTI]

    Karpov, Victor G.; Roussillon, Yann; Shvydka, Diana; Compaan, Alvin D.; Giolando, Dean M.

    2006-08-29T23:59:59.000Z

    A method of making a photovoltaic device using light energy and a solution to normalize electric potential variations in the device. A semiconductor layer having nonuniformities comprising areas of aberrant electric potential deviating from the electric potential of the top surface of the semiconductor is deposited onto a substrate layer. A solution containing an electrolyte, at least one bonding material, and positive and negative ions is applied over the top surface of the semiconductor. Light energy is applied to generate photovoltage in the semiconductor, causing a redistribution of the ions and the bonding material to the areas of aberrant electric potential. The bonding material selectively bonds to the nonuniformities in a manner such that the electric potential of the nonuniformities is normalized relative to the electric potential of the top surface of the semiconductor layer. A conductive electrode layer is then deposited over the top surface of the semiconductor layer.

  14. Band gap engineering at a semiconductor - crystalline oxide interface

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Moghadam, Jahangir-Moghadam; Shen, Xuan; Chrysler, Matthew; Ahmadi-Majlan, Kamyar; Su, Dong; Ngai, Joseph H.

    2015-03-01T23:59:59.000Z

    The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to integrating the functionalities of oxides onto semiconductors is controlling the band alignment at interfaces between the two materials. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZrxTi1-xO? and Ge, in which the band gap of the former is enhanced with Zr content x. We presentmore »structural and electrical characterization of SrZrxTi1-xO?-Ge heterojunctions and demonstrate a type-I band offset can be achieved. These results demonstrate that band gap engineering can be exploited to realize functional semiconductor crystalline oxide heterojunctions.« less

  15. Yang-Mills correlators at finite temperature: A perturbative perspective

    E-Print Network [OSTI]

    U. Reinosa; J. Serreau; M. Tissier; N. Wschebor

    2014-05-12T23:59:59.000Z

    We consider the two-point correlators of Yang-Mills theories at finite temperature in the Landau gauge. We employ a model for the corresponding Yang-Mills correlators based on the inclusion of an effective mass term for gluons. The latter is expected to have its origin in the existence of Gribov copies. One-loop calculations at zero temperature have been shown to agree remarkably well with the corresponding lattice data. We extend on this and perform a one-loop calculation of the Matsubara gluon and ghost two-point correlators at finite temperature. We show that, as in the vacuum, an effective gluon mass accurately captures the dominant infrared physics for the magnetic gluon and ghost propagators. It also reproduces the gross qualitative features of the electric gluon propagator. In particular, we find a slight nonmonotonous behavior of the Debye mass as a function of temperature, however not as pronounced as in existing lattice results. A more quantitative description of the electric sector near the deconfinement phase transition certainly requires another physical ingredient sensitive to the order parameter of the transition.

  16. Two Dimensional Gravity as a modified Yang-Mills Theory

    E-Print Network [OSTI]

    Gegenberg, Jack

    2015-01-01T23:59:59.000Z

    We study a deSitter/Anti-deSitter/Poincare Yang-Mills theory of gravity in d-space-time dimensions in an attempt to retain the best features of both general relativity and Yang-Mills theory: quadratic curvature, dimensionless coupling and background independence. We derive the equations of motion for Lie algebra valued scalars and show that in the geometric optics limit they traverse geodesics with respect to the Lorentzian geometry determined by the frame fields. Mixing between components appears to next to leading order in the WKB approximation. We then restrict to two space-time dimensions for simplicity, complete the Hamiltonian analysis of the vacuum theory and use it to prove a generalized Birkhoff theorem. There are two classes of solutions: with torsion and without torsion. The former are parametrized by two constants of motion, have event horizons for certain ranges of the parameters and a curvature singularity. The latter yield a unique solution, up to diffeomorphisms, that describes a space constan...

  17. Methods and devices for fabricating and assembling printable semiconductor elements

    DOE Patents [OSTI]

    Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Urbana, IL); Lee, Keon Jae (Savoy, IL); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Champaign, IL); Zhu, Zhengtao (Urbana, IL)

    2009-11-24T23:59:59.000Z

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  18. Method and system for powering and cooling semiconductor lasers

    DOE Patents [OSTI]

    Telford, Steven J; Ladran, Anthony S

    2014-02-25T23:59:59.000Z

    A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

  19. Methods and devices for fabricating and assembling printable semiconductor elements

    DOE Patents [OSTI]

    Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2014-03-04T23:59:59.000Z

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  20. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOE Patents [OSTI]

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2013-03-26T23:59:59.000Z

    Graded core/shell semiconductor nanorods and shapped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  1. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOE Patents [OSTI]

    Alivisatos, A. Paul (Oakland, CA); Scher, Erik C. (San Francisco, CA); Manna, Liberato (Palo Del Collie, IT)

    2009-05-19T23:59:59.000Z

    Disclosed herein is a graded core/shell semiconductor nanorod having at least a first segment of a core of a Group II-VI, Group III-V or a Group IV semiconductor, a graded shell overlying the core, wherein the graded shell comprises at least two monolayers, wherein the at least two monolayers each independently comprise a Group II-VI, Group III-V or a Group IV semiconductor.

  2. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOE Patents [OSTI]

    Alivisatos, A. Paul (Oakland, CA); Scher, Erik C. (San Francisco, CA); Manna, Liberato (Lecce, IT)

    2010-12-14T23:59:59.000Z

    Graded core/shell semiconductor nanorods and shaped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  3. Deposition method for producing silicon carbide high-temperature semiconductors

    DOE Patents [OSTI]

    Hsu, George C. (La Crescenta, CA); Rohatgi, Naresh K. (W. Corine, CA)

    1987-01-01T23:59:59.000Z

    An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

  4. Methods and devices for fabricating and assembling printable semiconductor elements

    DOE Patents [OSTI]

    Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2013-05-14T23:59:59.000Z

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  5. Methods and devices for fabricating and assembling printable semiconductor elements

    DOE Patents [OSTI]

    Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Durham, NC); Lee, Keon Jae (Daejeon, KR); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Raleigh, NC); Zhu, Zhengtao (Urbana, IL)

    2011-07-19T23:59:59.000Z

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  6. Method for fabricating an interconnected array of semiconductor devices

    DOE Patents [OSTI]

    Grimmer, Derrick P. (White Bear Lake, MN); Paulson, Kenneth R. (North St. Paul, MN); Gilbert, James R. (St. Paul, MN)

    1989-10-10T23:59:59.000Z

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  7. Beam excited acoustic instability in semiconductor quantum plasmas

    SciTech Connect (OSTI)

    Rasheed, A.; Siddique, M.; Huda, F. [Department of Physics, Government College University, Faisalabad 38000 (Pakistan); Jamil, M. [Department of Physics, COMSATS Institute of Information Technology, Lahore 54000 (Pakistan); Jung, Y.-D. [Department of Applied Physics and Department of Bionanotechnology, Hanyang University, Ansan, Kyunggi-Do 426-791 (Korea, Republic of)

    2014-06-15T23:59:59.000Z

    The instability of hole-Acoustic waves due to electron beam in semiconductor quantum plasmas is examined using the quantum hydrodynamic model. The quantum effects are considered including Bohm potential, Fermi degenerate pressure, and exchange potential of the semiconductor quantum plasma species. Our model is applied to nano-sized GaAs semiconductor plasmas. The variation of the growth rate of the unstable mode is obtained over a wide range of system parameters. It is found that the thermal effects of semiconductor species have significance over the hole-Acoustic waves.

  8. Kyungdong Photovoltaic Energy Corp KPE formerly Photon Semiconductor...

    Open Energy Info (EERE)

    Kyungdong Photovoltaic Energy Corp KPE formerly Photon Semiconductor Energy Jump to: navigation, search Name: Kyungdong Photovoltaic Energy Corp (KPE) (formerly Photon...

  9. Magnetic Gas Sensing Using a Dilute Magnetic Semiconductor. ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Abstract: The authors report on a magnetic gas sensing methodology to detect hydrogen using the ferromagnetic properties of a nanoscale dilute magnetic semiconductor...

  10. Method for depositing high-quality microcrystalline semiconductor materials

    DOE Patents [OSTI]

    Guha, Subhendu (Bloomfield Hills, MI); Yang, Chi C. (Troy, MI); Yan, Baojie (Rochester Hills, MI)

    2011-03-08T23:59:59.000Z

    A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

  11. Statistical Methods for Enhanced Metrology in Semiconductor/Photovoltaic Manufacturing

    E-Print Network [OSTI]

    Zeng, Dekong

    2012-01-01T23:59:59.000Z

    process control charts (SPC) for product quality and processstatistical process control (SPC) charts. The concept is toMethods Univariate SPC for semiconductor manufacturing

  12. Argonne announces new licensing agreement with AKHAN Semiconductor...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Argonne announces new licensing agreement with AKHAN Semiconductor By Jared Sagoff * November 19, 2014 Tweet EmailPrint ARGONNE, Ill. - The U.S. Department of Energy's (DOE)...

  13. Exploring Electron Transfer in Organic Semiconductors | MIT-Harvard...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Electron Transfer in Organic Semiconductors January 28, 2009 at 3pm36-428 Troy Van Voorhis Department of Chemistry, Massachusetts Institute of Technology vanvoorhis2000 abstract:...

  14. Metal Oxide Semiconductor Nanoparticles Open the Door to New...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovations Technology available for licensing: novel nanometer-sized metal oxide semiconductors that allow targeting, initiating and control of in vitro and in vivo chemical...

  15. Ferromagnetic Semiconductor Nanoclusters: Co-doped Cu2O. | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    exhibits a temperature dependent decrease. Citation: Antony J, Y Qiang, F Muhammad, D Meyer, DE McCready, and MH Engelhard.2007."Ferromagnetic Semiconductor Nanoclusters:...

  16. The Technical and Economic Potential for Electricity Energy Efficiency in a Semiconductor Manufacturing Plant

    E-Print Network [OSTI]

    Lee, A. H. W.; Golden, J. W.; Zarnikau, J. W.

    In recent years, there has been renewed interest in energy efficiency in the semiconductor industry. The declining prices for semiconductor products has prompted semiconductor manufacturing plants to control costs so as to maintain profitability...

  17. Polarized x-ray spectroscopy of quaternary ferromagnetic semiconductor (Ga,Mn)(As,P)

    E-Print Network [OSTI]

    Wadley, P.

    2011-01-01T23:59:59.000Z

    quaternary diluted magnetic semiconductor (Ga,Mn)(As,P) as aIn diluted magnetic semiconductors such as (Ga,Mn)As, whichquaternary diluted magnetic semiconductors such as (Ga,Mn)(

  18. Construction of a Deep Level Transient Spectroscopy (DLTS) Setup Semiconductors and DLTS

    E-Print Network [OSTI]

    Zhao, Yuxiao

    Construction of a Deep Level Transient Spectroscopy (DLTS) Setup Semiconductors and DLTS Semiconductor devices are central to information technology. Their importance stems from the fact Ian Booker Semiconductor Materials Group Dept. Of Physics, Chemistry and Biology, IFM Linköping

  19. Study of Semiconductor Microring Lasers for use in Wavelength Division Multiplexing (WDM)

    E-Print Network [OSTI]

    Kouroupetroglou, Georgios

    Study of Semiconductor Microring Lasers for use in Wavelength Division Multiplexing (WDM of all-active microring resonators as lasers are studied. The structure of a semiconductor microring demonstrated. Keywords: Semiconductor microring lasers, non-linear gain, multimode operation, mode

  20. Atomic and electronic structures of oxides on III-V semiconductors :

    E-Print Network [OSTI]

    Shen, Jian

    2010-01-01T23:59:59.000Z

    and passivation of a compound semiconductor surface duringIn 2 O and SiO/III-V Semiconductor Interface, in press with2 O and SiO/III-V Semiconductor Interface, ECS Transaction (

  1. Strain broadening of the magnetization steps in diluted magnetic semiconductors Yuri G. Rubo* and M. F. Thorpe

    E-Print Network [OSTI]

    Thorpe, Michael

    Strain broadening of the magnetization steps in diluted magnetic semiconductors Yuri G. Rubo* and M alloys diluted magnetic semiconductors results in fluctuations of the exchange constants between semiconducting alloys, the so- called semimagnetic semiconductors or diluted magnetic semiconductors DMS

  2. Hydrogen local vibrational modes in semiconductors

    SciTech Connect (OSTI)

    McCluskey, M D [Univ. of California, Berkeley, CA (United States). Dept. of Physics

    1997-06-01T23:59:59.000Z

    Following, a review of experimental techniques, theory, and previous work, the results of local vibrational mode (LVM) spectroscopy on hydrogen-related complexes in several different semiconductors are discussed. Hydrogen is introduced either by annealing in a hydrogen ambient. exposure to a hydrogen plasma, or during growth. The hydrogen passivates donors and acceptors in semiconductors, forming neutral complexes. When deuterium is substituted for hydrogen. the frequency of the LVM decreases by approximately the square root of two. By varying the temperature and pressure of the samples, the microscopic structures of hydrogen-related complexes are determined. For group II acceptor-hydrogen complexes in GaAs, InP, and GaP, hydrogen binds to the host anion in a bond-centered orientation, along the [111] direction, adjacent to the acceptor. The temperature dependent shift of the LVMs are proportional to the lattice thermal energy U(T), a consequence of anharmonic coupling between the LVM and acoustical phonons. In the wide band gap semiconductor ZnSe, epilayers grown by metalorganic chemical vapor phase epitaxy (MOCVD) and doped with As form As-H complexes. The hydrogen assumes a bond-centered orientation, adjacent to a host Zn. In AlSb, the DX centers Se and Te are passivated by hydrogen. The second, third, and fourth harmonics of the wag modes are observed. Although the Se-D complex has only one stretch mode, the Se-H stretch mode splits into three peaks. The anomalous splitting is explained by a new interaction between the stretch LVM and multi-phonon modes of the lattice. As the temperature or pressure is varied, and anti-crossing is observed between LVM and phonon modes.

  3. Semiconductor heterojunction band offsets and charge neutrality

    E-Print Network [OSTI]

    Lee, Chomsik

    1989-01-01T23:59:59.000Z

    = 33&Pb = 3 3&PAB = 35 1 . aI M 0 A 0. ? 1 2. 0. Energy(eV) 1 2. 0 0. ? 1 0. Energy(eV) 1 2. Figure 4. 4. Local density of states, parameters for this case are s, = ? 7, s?= 1, s, = l&sp 7~Pa = 4~A = 4)DAB ? .35. -12. 0. Energy(eV) 0... Signature of APS Member Roland E. Allen Department of Physics'- Texas A&M University ' College Station, TX 77843 s p ~ CX3 SEMICONDUCTOR HETEROJUNCTION BAND OFFSETS AND CHARGE NEUTRALITY A Thesis by CHOMSIK LEE Submitted to the Oflice of Graduate...

  4. Transient Rayleigh scattering from single semiconductor nanowires

    SciTech Connect (OSTI)

    Montazeri, Mohammad; Jackson, Howard E.; Smith, Leigh M. [Department of Physics, University of Cincinnati, Cincinnati, OH 45221-0011 (United States); Yarrison-Rice, Jan M. [Department of Physics, Miami University, Oxford, OH 45056 (United States); Kang, Jung-Hyun; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia)

    2013-12-04T23:59:59.000Z

    Transient Rayleigh scattering spectroscopy is a new pump-probe technique to study the dynamics and cooling of photo-excited carriers in single semiconductor nanowires. By studying the evolution of the transient Rayleigh spectrum in time after excitation, one can measure the time evolution of the density and temperature of photo-excited electron-hole plasma (EHP) as they equilibrate with lattice. This provides detailed information of dynamics and cooling of carriers including linear and bimolecular recombination properties, carrier transport characteristics, and the energy-loss rate of hot electron-hole plasma through the emission of LO and acoustic phonons.

  5. Semiconductor bridge, SCB, ignition of energetic materials

    SciTech Connect (OSTI)

    Bickes, R.W.; Grubelich, M.D.; Harris, S.M.; Merson, J.A.; Tarbell, W.W.

    1997-04-01T23:59:59.000Z

    Sandia National Laboratories` semiconductor bridge, SCB, is now being used for the ignition or initiation of a wide variety of exeoergic materials. Applications of this new technology arose because of a need at the system level to provide light weight, small volume and low energy explosive assemblies. Conventional bridgewire devices could not meet the stringent size, weight and energy requirements of our customers. We present an overview of SCB technology and the ignition characteristics for a number of energetic materials including primary and secondary explosives, pyrotechnics, thermites and intermetallics. We provide examples of systems designed to meet the modern requirements that sophisticated systems must satisfy in today`s market environments.

  6. Semiconductor lasers with uniform longitudinal intensity distribution

    SciTech Connect (OSTI)

    Schrans, T.; Yariv, A. (Department of Applied Physics 128-95, California Institute of Technology, Pasadena, California 91125 (USA))

    1990-04-16T23:59:59.000Z

    Power-dependent nonuniform longitudinal intensity distribution leading to spectral and spatial instabilities is a major problem in semiconductor lasers. It is shown theoretically that a proper choice of the longitudinal distribution of the gain as well as that of the magnitude of the grating coupling coefficient will lead to a uniform intensity distribution in distributed feedback lasers. We also show that the widely used phase, rather than magnitude, control of the coupling coefficient cannot lead to a uniform intensity distribution when the facet reflectivities are zero.

  7. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  8. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

    1998-01-01T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  9. Dissipative dynamics in semiconductors at low temperature

    E-Print Network [OSTI]

    George Androulakis; Jean Bellissard; Christian Sadel

    2011-07-06T23:59:59.000Z

    A mathematical model is introduced which describes the dissipation of electrons in lightly doped semi-conductors. The dissipation operator is proved to be densely defined and positive and to generate a Markov semigroup of operators. The spectrum of the dissipation operator is studied and it is shown that zero is a simple eigenvalue, which makes the equilibrium state unique. Also it is shown that there is a gap between zero and the rest of its spectrum which makes the return to equilibrium exponentially fast in time.

  10. Generalized Nariai Solutions for Yang-type Monopoles

    E-Print Network [OSTI]

    Pablo Diaz; Antonio Segui

    2007-06-01T23:59:59.000Z

    A detailed study of the geometries that emerge by a gravitating generalized Yang monopole in even dimensions is carried out. In particular, those which present black hole and cosmological horizons. This two-horizon system is thermally unstable. The process of thermalization will drive both horizons to coalesce. This limit is what is profusely studied in this paper. It is shown that eventhough coordinate distance shrinks to zero, physical distance does not. So, there is some remaining space which geometry has been computed and identified as a generalized Nariai solution. The thermal properties of this new spacetime are then calculated. Topics, as the elliptical relation between radii of spheres in the geometry or a discussion about whether a mass-type term should be present in the line element or not, are also included.

  11. Noncommutative (supersymmetric) electrodynamics in the Yang-Feldman formalism

    SciTech Connect (OSTI)

    Zahn, Jochen [Courant Research Centre 'Higher Order Structures in Mathematics', University of Goettingen, D-37073 Goettingen (Germany)

    2010-11-15T23:59:59.000Z

    We study quantum electrodynamics on the noncommutative Minkowski space (NCQED) in the Yang-Feldman formalism. Local observables are defined by using covariant coordinates. We compute the two-point function of the interacting field strength to second order and find the infrared divergent terms already known from computations using the so-called modified Feynman rules. It is shown that these lead to nonlocal renormalization ambiguities. Also new nonlocal divergences stemming from the covariant coordinates are found. Furthermore, we study the supersymmetric extension of the model. For this, the supersymmetric generalization of the covariant coordinates is introduced. We find that the nonlocal divergences cancel. At the one-loop level, the only effect of noncommutativity is then a momentum-dependent field strength normalization. We interpret it as an acausal effect and show that its range is independent of the noncommutativity scale.

  12. Dual superconductivity and vacuum properties in Yang--Mills theories

    E-Print Network [OSTI]

    A. D'Alessandro; M. D'Elia; L. Tagliacozzo

    2007-05-03T23:59:59.000Z

    We address, within the dual superconductivity model for color confinement, the question whether the Yang-Mills vacuum behaves as a superconductor of type I or type II. In order to do that we compare, for the theory with gauge group SU(2), the determination of the field penetration depth $\\lambda$ with that of the superconductor correlation length $\\xi$. The latter is obtained by measuring the temporal correlator of a disorder parameter developed by the Pisa group to detect dual superconductivity. The comparison places the vacuum close to the border between type I and type II and marginally on the type II side. We also check our results against the study of directly measurable effects such as the interaction between two parallel flux tubes, obtaining consistent indications for a weak repulsive behaviour. Future strategies to improve our investigation are discussed.

  13. Function group approach to unconstrained Hamiltonian Yang-Mills theory

    E-Print Network [OSTI]

    Antti Salmela

    2005-09-07T23:59:59.000Z

    Starting from the temporal gauge Hamiltonian for classical pure Yang-Mills theory with the gauge group SU(2) a canonical transformation is initiated by parametrising the Gauss law generators with three new canonical variables. The construction of the remaining variables of the new set proceeds through a number of intermediate variables in several steps, which are suggested by the Poisson bracket relations and the gauge transformation properties of these variables. The unconstrained Hamiltonian is obtained from the original one by expressing it in the new variables and then setting the Gauss law generators to zero. This Hamiltonian turns out to be local and it decomposes into a finite Laurent series in powers of the coupling constant.

  14. Modular Algorithms for Transient Semiconductor Device Simulation, Part I

    E-Print Network [OSTI]

    Jerome, Joseph W.

    Modular Algorithms for Transient Semiconductor Device Simulation, Part I: Analysis of the Outer, is introduced at dis- crete time steps for the one-dimensional semiconductor device model. The it- eration as approximate Newton iterations. Continuation is employed as the time-stepping bridge. 1 Introduction In Part I

  15. Effect of superluminescence on the modulation response of semiconductor lasers

    SciTech Connect (OSTI)

    Lau, K.Y.; Yariv, A.

    1982-03-15T23:59:59.000Z

    The small-signal modulation response of semiconductor lasers with a very small mirror reflectivity is analyzed. Superluminescent effects inside the laser cavity provide yet another mechanism for damping relaxation oscillation resonance. These results can serve as useful guides in designing high frequency semiconductor lasers.

  16. Profiling the Thermoelectric Power of Semiconductor Junctions with

    E-Print Network [OSTI]

    Profiling the Thermoelectric Power of Semiconductor Junctions with Nanometer Resolution Ho-Ki Lyeo,3 * We have probed the local thermoelectric power of semiconductor nanostruc- tures with the use of ultrahigh-vacuum scanning thermoelectric microscopy. When applied to a p-n junction, this method reveals

  17. ECE 451 -Fall 2011 Physics of Semiconductor Devices (3)

    E-Print Network [OSTI]

    Gilchrist, James F.

    ECE 451 - Fall 2011 Physics of Semiconductor Devices (3) Electronics and Optoelectronics-Photon Scattering Processes (Optional) 18. Novel Optoelectronics and Electronics Devices (Optional) Structure on Semiconductor Physics and Device Physics, Draft Version (2010). Other Additional References or Readings: 1. J

  18. hal00267005, Modeling semiconductor thermal properties. The dispersion role.

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    , or in solar panels 3 , and are even used in medicine 4 . The increasing use of semiconductor micro in transistors 6 and semiconductor nano#12;lms in solar cells. At these low scale, Fourier's law may give , similar to photon intensity used in radiative transfer 24 . Thus, the energy ux per apparent surface unit

  19. Propagation of Nonclassical Radiation through a Semiconductor Slab

    E-Print Network [OSTI]

    D. Yu. Vasylyev; W. Vogel; T. Schmielau; K. Henneberger; D. -G. Welsch

    2008-02-20T23:59:59.000Z

    Based on a microscopic derivation of the emission spectra of a bulk semiconductor we arrive at a clear physical interpretation of the noise current operators in macroscopic quantum electrodynamics. This opens the possibility to study medium effects on nonclassical radiation propagating through an absorbing or amplifying semiconductor. As an example, the propagation of an incident squeezed vacuum is analyzed.

  20. Semiconductor Nanocomposites DOI: 10.1002/anie.201100200

    E-Print Network [OSTI]

    Lin, Zhiqun

    Semiconductor Nanocomposites DOI: 10.1002/anie.201100200 Semiconductor Anisotropic Nanocomposites-based organic/inorganic hybrid solar cells (e.g., CP/QD composites) are favorable alternatives to inorganic elegant approach is to chemically tether CPs on the QD surface (i.e., preparing CP­QD nanocomposites

  1. Comparison of Wide-Bandgap Semiconductors for Power Electronics Applications

    SciTech Connect (OSTI)

    Ozpineci, B.

    2004-01-02T23:59:59.000Z

    Recent developmental advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many applications are at a point that the present Si-based power devices cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. To overcome these limitations, new semiconductor materials for power device applications are needed. For high power requirements, wide-bandgap semiconductors like silicon carbide (SiC), gallium nitride (GaN), and diamond, with their superior electrical properties, are likely candidates to replace Si in the near future. This report compares wide-bandgap semiconductors with respect to their promise and applicability for power applications and predicts the future of power device semiconductor materials.

  2. Apparatus for the etching for semiconductor devices

    SciTech Connect (OSTI)

    Reinberg, A.R.; Steinberg, G.N.

    1983-01-11T23:59:59.000Z

    Apparatus for the etching of semiconductor devices which includes, in combination, an etching chamber containing the semiconductor device to be etched, an electrodeless etching plasma forming chamber having an inlet connected to a source of continuously flowing etching gas and having an outlet connected to said etching chamber in fluid flow communication; a helical inductive resonator coupler for coupling a source of R.F. electrical power into the electrodeless plasma forming chamber for continuously forming etching plasma from the etching gas flowing therethrough; this inductive resonator coupler including a grounded hollow cylinder of electrically conductive material, with a grounded base member at one end; a helically coiled wire conductor concentrically mounted within the cylinder and spaced from the inner walls thereof; the plasma forming chamber being mounted substantially concentrically within the coil, the end of the coil toward the base member being grounded; and an electrical coupling for applying into the coil an R.F. source of electrical power at a position near, but spaced from, the grounded end thereof.

  3. Coated semiconductor devices for neutron detection

    DOE Patents [OSTI]

    Klann, Raymond T. (Bolingbrook, IL); McGregor, Douglas S. (Whitmore Lake, MI)

    2002-01-01T23:59:59.000Z

    A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and electrical settings, neutrons at specific energies can be detected. The coated neutron detector is capable of performing real-time neutron radiography in high gamma fields, digital fast neutron radiography, fissile material identification, and basic neutron detection particularly in high radiation fields.

  4. Visible-wavelength semiconductor lasers and arrays

    DOE Patents [OSTI]

    Schneider, R.P. Jr.; Crawford, M.H.

    1996-09-17T23:59:59.000Z

    The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

  5. BRST invariant PV regularization of SUSY Yang-Mills and SUGRA

    E-Print Network [OSTI]

    Mary K. Gaillard

    2011-09-14T23:59:59.000Z

    Pauli-Villars regularization of Yang-Mills theories and of supergravity theories is outlined, with an emphasis on BRST invariance. Applications to phenomenology and the anomaly structure of supergravity are discussed.

  6. BRST Invariant PV Regularization of SUSY Yang-Mills and SUGRA

    E-Print Network [OSTI]

    Gaillard, Mary K

    2012-01-01T23:59:59.000Z

    September 2011 BRST Invariant PV Regularization of SUSYemployer. ii BRST INVARIANT PV REGULARIZATION OF SUSY YANG-a number of years on Pauli-Villars (PV) regu- larization of

  7. Elastic scattering at CERN collider energies and the Chou-Yang model

    SciTech Connect (OSTI)

    Bellandi F , J.; Brunetto, S.Q.; Covolan, R.J.M.; Menon, M.J.; Pimentel, B.M.; Padua, A.B.

    1987-05-01T23:59:59.000Z

    The p-barp elastic scattering at ..sqrt..s-bar = 546 and 630 GeV is analyzed in the Chou-Yang model with Martin's real part in the elastic amplitude.

  8. Conformally flat Einstein-Yang-Mills-Higgs solutions with spherical symmetry

    SciTech Connect (OSTI)

    Mondaini, R.P.; Santos, N.O.

    1983-10-15T23:59:59.000Z

    We solve the Einstein-Yang-Mills-Higgs equations in a conformally flat metric with spherical symmetry. Two solutions are obtained corresponding to magnetic monopoles in the Higgs vacuum and outside of it.

  9. Sensitivity Analysis of Discrete Stochastic Systems Rudiyanto Gunawan,* Yang Cao,y

    E-Print Network [OSTI]

    Cao, Yang

    and deterministic analyses show the significance of explicit consideration of the probabilistic natureSensitivity Analysis of Discrete Stochastic Systems Rudiyanto Gunawan,* Yang Cao,y Linda Petzold, University of California, Santa Barbara, California ABSTRACT Sensitivity analysis quantifies the dependence

  10. Classical M-Fivebrane Dynamics and Quantum N=2 Yang-Mills

    E-Print Network [OSTI]

    P. S. Howe; N. D. Lambert; P. C. West

    1997-11-05T23:59:59.000Z

    We obtain the complete quantum Seiberg-Witten effective action for N=2 supersymmetric SU(N) Yang-Mills theory from the classical M-fivebrane equations of motion with N threebranes moving in its worldvolume.

  11. Static Cosmological Solutions of the Einstein-Yang-Mills-Higgs Equations

    E-Print Network [OSTI]

    P. Breitenlohner; P. Forgács; D. Maison

    2000-06-13T23:59:59.000Z

    Numerical evidence is presented for the existence of a new family of static, globally regular `cosmological' solutions of the spherically symmetric Einstein-Yang-Mills-Higgs equations. These solutions are characterized by two natural numbers ($m\\geq 1$, $n\\geq 0$), the number of nodes of the Yang-Mills and Higgs field respectively. The corresponding spacetimes are static with spatially compact sections with 3-sphere topology.

  12. Development and evaluation of the Nurotron 26-electrode cochlear implant system

    E-Print Network [OSTI]

    2015-01-01T23:59:59.000Z

    Liu, B. , Dong, R. , Chen, X. , Gong, S. , Li, Y. , Qi, B. ,Shiming Yang f , Shusheng Gong g , Beibei Yang h , Hou-YongVan Harrison, Keli Cao, Qin Gong, Demin Han, Weijia Kong,

  13. Development of fluorocarbon evaporative cooling recirculators and controls for the ATLAS pixel and semiconductor tracking detectors

    E-Print Network [OSTI]

    Bayer, C; Bonneau, P; Bosteels, Michel; Burckhart, H J; Cragg, D; English, R; Hallewell, G D; Hallgren, Björn I; Kersten, S; Kind, P; Langedrag, K; Lindsay, S; Merkel, M; Stapnes, Steinar; Thadome, J; Vacek, V

    2000-01-01T23:59:59.000Z

    Development of fluorocarbon evaporative cooling recirculators and controls for the ATLAS pixel and semiconductor tracking detectors

  14. High power semiconductor laser sources. Annual report, 12 March 1985-11 March 1986

    SciTech Connect (OSTI)

    Lang, R.; Salzman, J.; Yariv

    1986-06-10T23:59:59.000Z

    Unstable semiconductor lasers were fabricated, and their potential as high power laser sources was analyzed.

  15. Control of coherence resonance in semiconductor superlattices

    E-Print Network [OSTI]

    Johanne Hizanidis; Eckehard Schoell

    2008-09-01T23:59:59.000Z

    We study the effect of time-delayed feedback control and Gaussian white noise on the spatio-temporal charge dynamics in a semiconductor superlattice. The system is prepared in a regime where the deterministic dynamics is close to a global bifurcation, namely a saddle-node bifurcation on a limit cycle ({\\it SNIPER}). In the absence of control, noise can induce electron charge front motion through the entire device, and coherence resonance is observed. We show that with appropriate selection of the time-delayed feedback parameters the effect of coherence resonance can either be enhanced or destroyed, and the coherence of stochastic domain motion at low noise intensity is dramatically increased. Additionally, the purely delay-induced dynamics in the system is investigated, and a homoclinic bifurcation of a limit cycle is found.

  16. Modeling direct interband tunneling. I. Bulk semiconductors

    SciTech Connect (OSTI)

    Pan, Andrew, E-mail: pandrew@ucla.edu [Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California 90095 (United States); Chui, Chi On [Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California 90095 (United States); California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095 (United States)

    2014-08-07T23:59:59.000Z

    Interband tunneling is frequently studied using the semiclassical Kane model, despite uncertainty about its validity. Revisiting the physical basis of this formula, we find that it neglects coupling to other bands and underestimates transverse tunneling. As a result, significant errors can arise at low and high fields for small and large gap materials, respectively. We derive a simple multiband tunneling model to correct these defects analytically without arbitrary parameters. Through extensive comparison with band structure and quantum transport calculations for bulk InGaAs, InAs, and InSb, we probe the accuracy of the Kane and multiband formulas and establish the superiority of the latter. We also show that the nonlocal average electric field should be used when applying either of these models to nonuniform potentials. Our findings are important for efficient analysis and simulation of bulk semiconductor devices involving tunneling.

  17. Linear tailored gain broad area semiconductor lasers

    SciTech Connect (OSTI)

    Lindsey, C.P.; Mehuys, D.; Yariv, A.

    1987-06-01T23:59:59.000Z

    Tailored gain semiconductor lasers capable of high-power operation with single-lobed, nearly diffraction limited beamwidths only a few degrees wide have been demonstrated in proton implanted chirped arrays and ''halftone'' broad area lasers. The authors analyze lasers with a linear gain gradient, and obtain analytic approximations for their unsaturated optical eigenmodes. Unlike a uniform array, the fundamental mode of a linear tailored gain laser is the mode at threshold. Mode discrimination may be controlled by lasing the spatial gain gradient. All modes of asymmetric tailored gain waveguides have single-lobed far-field patterns offset from 0/sup 0/. Finally, they utilize tailored gain broad area lasers to make a measurement of the antiguiding parameter, and find b = 2.5 +- 0.5, in agreement with previous results.

  18. Ion Trap in a Semiconductor Chip

    E-Print Network [OSTI]

    D. Stick; W. K. Hensinger; S. Olmschenk; M. J. Madsen; K. Schwab; C. Monroe

    2006-01-09T23:59:59.000Z

    The electromagnetic manipulation of isolated atoms has led to many advances in physics, from laser cooling and Bose-Einstein condensation of cold gases to the precise quantum control of individual atomic ion. Work on miniaturizing electromagnetic traps to the micrometer scale promises even higher levels of control and reliability. Compared with 'chip traps' for confining neutral atoms, ion traps with similar dimensions and power dissipation offer much higher confinement forces and allow unparalleled control at the single-atom level. Moreover, ion microtraps are of great interest in the development of miniature mass spectrometer arrays, compact atomic clocks, and most notably, large scale quantum information processors. Here we report the operation of a micrometer-scale ion trap, fabricated on a monolithic chip using semiconductor micro-electromechanical systems (MEMS) technology. We confine, laser cool, and measure heating of a single 111Cd+ ion in an integrated radiofrequency trap etched from a doped gallium arsenide (GaAs) heterostructure.

  19. Simulation of neutron radiation damage in silicon semiconductor devices.

    SciTech Connect (OSTI)

    Shadid, John Nicolas; Hoekstra, Robert John; Hennigan, Gary Lee; Castro, Joseph Pete Jr.; Fixel, Deborah A.

    2007-10-01T23:59:59.000Z

    A code, Charon, is described which simulates the effects that neutron damage has on silicon semiconductor devices. The code uses a stabilized, finite-element discretization of the semiconductor drift-diffusion equations. The mathematical model used to simulate semiconductor devices in both normal and radiation environments will be described. Modeling of defect complexes is accomplished by adding an additional drift-diffusion equation for each of the defect species. Additionally, details are given describing how Charon can efficiently solve very large problems using modern parallel computers. Comparison between Charon and experiment will be given, as well as comparison with results from commercially-available TCAD codes.

  20. Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process

    DOE Patents [OSTI]

    Alivisatos, A. Paul (Oakland, CA); Peng, Xiaogang (Fayetteville, AR); Manna, Liberato (Palo del Colle, IT)

    2001-01-01T23:59:59.000Z

    A process for the formation of shaped Group III-V semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

  1. Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process

    DOE Patents [OSTI]

    Alivisatos, A. Paul (Oakland, CA); Peng, Xiaogang (Fayetteville, AR); Manna, Liberato (Palo del Colle, IT)

    2001-01-01T23:59:59.000Z

    A process for the formation of shaped Group II-VI semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

  2. Fermion Actions extracted from Lattice Super Yang-Mills Theories

    E-Print Network [OSTI]

    Misumi, Tatsuhiro

    2013-01-01T23:59:59.000Z

    We revisit 2D $\\mathcal{N}=(2,2)$ super Yang-Mills lattice formulation (Sugino model) to investigate its fermion action with two (Majorana) fermion flavors and exact chiral-$U(1)_{R}$ symmetry. We show that the reconcilement of chiral symmetry and absence of further species-doubling originates in the 4D clifford algebra structure of the action, where 2D two flavors are spuriously treated as a single 4D four-spinor with four 4D gamma matrices introduced into kinetic and Wilson terms. This fermion construction based on the higher-dimensional clifford algebra is extended to four dimensions in two manners: (1) pseudo-8D sixteen-spinor treatment of 4D four flavors with eight 8D gamma matrices, (2) pseudo-6D eight-spinor treatment of 4D two flavors with five out of six 6D gamma matrices. We obtain 4D four-species and two-species lattice fermions with unbroken subgroup of chiral symmetry and other essential properties. We discuss their relations to staggered and Wilson twisted-mass fermions. We also discuss their po...

  3. Finite-Volume Spectra of the Lee-Yang Model

    E-Print Network [OSTI]

    Zoltan Bajnok; Omar el Deeb; Paul A. Pearce

    2014-12-29T23:59:59.000Z

    We consider the non-unitary Lee-Yang minimal model ${\\cal M}(2,5)$ in three different finite geometries: (i) on the interval with integrable boundary conditions labelled by the Kac labels $(r,s)=(1,1),(1,2)$, (ii) on the circle with periodic boundary conditions and (iii) on the periodic circle including an integrable purely transmitting defect. We apply $\\varphi_{1,3}$ integrable perturbations on the boundary and on the defect and describe the flow of the spectrum. Adding a $\\Phi_{1,3}$ integrable perturbation to move off-criticality in the bulk, we determine the finite size spectrum of the massive scattering theory in the three geometries via Thermodynamic Bethe Ansatz (TBA) equations. We derive these integral equations for all excitations by solving, in the continuum scaling limit, the TBA functional equations satisfied by the transfer matrices of the associated $A_{4}$ RSOS lattice model of Forrester and Baxter in Regime III. The excitations are classified in terms of $(m,n)$ systems. The excited state TBA equations agree with the previously conjectured equations in the boundary and periodic cases. In the defect case, new TBA equations confirm previously conjectured transmission factors.

  4. Thermo-electrically pumped semiconductor light emitting diodes

    E-Print Network [OSTI]

    Santhanam, Parthiban

    2014-01-01T23:59:59.000Z

    Thermo-electric heat exchange in semiconductor light emitting diodes (LEDs) allows these devices to emit optical power in excess of the electrical power used to drive them, with the remaining power drawn from ambient heat. ...

  5. Conductive layer for biaxially oriented semiconductor film growth

    DOE Patents [OSTI]

    Findikoglu, Alp T. (Los Alamos, NM); Matias, Vladimir (Santa Fe, NM)

    2007-10-30T23:59:59.000Z

    A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.

  6. Printable semiconductor structures and related methods of making and assembling

    DOE Patents [OSTI]

    Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Urbana, IL); Lee, Keon Jae (Tokyo, JP); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Westmont, IL); Meitl, Matthew (Champaign, IL); Zhu, Zhengtao (Rapid City, SD); Ko, Heung Cho (Urbana, IL); Mack, Shawn (Goleta, CA)

    2010-09-21T23:59:59.000Z

    The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

  7. Printable semiconductor structures and related methods of making and assembling

    DOE Patents [OSTI]

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang; , Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

    2013-03-12T23:59:59.000Z

    The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

  8. Printable semiconductor structures and related methods of making and assembling

    DOE Patents [OSTI]

    Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Durham, NC); Lee, Keon Jae (Tokyo, JP); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Westmont, IL); Meitl, Matthew (Raleigh, NC); Zhu, Zhengtao (Rapid City, SD); Ko, Heung Cho (Urbana, IL); Mack, Shawn (Goleta, CA)

    2011-10-18T23:59:59.000Z

    The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

  9. Composition/bandgap selective dry photochemical etching of semiconductor materials

    DOE Patents [OSTI]

    Ashby, C.I.H.; Dishman, J.L.

    1985-10-11T23:59:59.000Z

    Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg/sub 1/ in the presence of a second semiconductor material of a different composition and direct bandgap Eg/sub 2/, wherein Eg/sub 2/ > Eg/sub 1/, said second semiconductor material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg/sub 1/ but less than Eg/sub 2/, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

  10. Improving reuse of semiconductor equipment through benchmarking, standardization, and automation

    E-Print Network [OSTI]

    Silber, Jacob B. (Jacob Bradley)

    2006-01-01T23:59:59.000Z

    The 6D program at Intel® Corporation was set up to improve operations around capital equipment reuse, primarily in their semiconductor manufacturing facilities. The company was faced with a number of challenges, including ...

  11. Linewidth enhancement factor. cap alpha. in semiconductor injection lasers

    SciTech Connect (OSTI)

    Vahala, K.; Chiu, L.C.; Margalit, S.; Yariv, A.

    1983-04-15T23:59:59.000Z

    A simple model for the linewidth enhancement factor ..cap alpha.. and its frequency dependence in semiconductor lasers is presented. Calculations based on this model are in reasonable agreement with experimental results.

  12. Ultrafast optical studies of electronic dynamics in semiconductors

    E-Print Network [OSTI]

    Ruzicka, Brian Andrew

    2012-05-31T23:59:59.000Z

    to their limited temporal resolution, electron measurement techniques cannot be used to study these processes on time scales in which the carrier-lattice system is not in equilibrium. However, in contemporary semiconductor devices with nanometer dimensions...

  13. Charge and magnetization inhomogeneities in diluted magnetic semiconductors

    E-Print Network [OSTI]

    Timm, Carsten

    2006-03-01T23:59:59.000Z

    It is predicted that III-V diluted magnetic semiconductors can exhibit stripelike modulations of magnetization and carrier concentration. This inhomogeneity results from the strong dependence of the magnetization on the carrier concentration. Within...

  14. Translating semiconductor device physics into nanoparticle films for electronic applications

    E-Print Network [OSTI]

    Wanger, Darcy Deborah

    2014-01-01T23:59:59.000Z

    This thesis explores and quantifies some of the important device physics, parameters, and mechanisms of semiconductor nanocrystal quantum dot (QD) electronic devices, and photovoltaic devices in particular. This involves ...

  15. Semiconductor nanocrystals : synthesis, mechanisms of formation, and applications in biology

    E-Print Network [OSTI]

    Allen, Peter M. (Peter Matthew)

    2010-01-01T23:59:59.000Z

    The primary focus of this thesis is the synthesis and applications of semiconductor nanocrystals, or quantum dots (QDs). Novel synthetic routes to ternary 1-III-VI QDs are presented, and we report the first highly luminescent ...

  16. Exploring and enhancing conductivity in semiconductor nanoparticle films

    E-Print Network [OSTI]

    Porter, Venda Jane

    2007-01-01T23:59:59.000Z

    Semiconductor nanocrystals (NCs) are a promising material for use in opto-electronic devices as their optical properties tune with particle size. NCs formed via colloidal synthesis are suspended in solution by the organic ...

  17. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01T23:59:59.000Z

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  18. Semiconductor nanowire array: potential substrates for photocatalysis and photovoltaics

    E-Print Network [OSTI]

    Yang, Peidong

    Semiconductor nanowire array: potential substrates for photocatalysis and photovoltaics Yiying Wu, these nanowire arrays could find unique applications in photocatalysis and photovoltaics. KEY WORDS luminescence efficiency [5,6], enhancement of thermoelectric figure of merit [7] and lowered lasing threshold

  19. High-Throughput Transfer Imprinting for Organic Semiconductors 

    E-Print Network [OSTI]

    Choo, Gihoon

    2013-08-06T23:59:59.000Z

    . In this work, nanoimprint-based transfer imprinting of organic semiconductor is studied. In the same time the suggested technique is simulated with COMSOL multi-physics simulator to understand its mechanism. This transfer printing technique utilize thermal...

  20. Ultrafast nonlinear optical properties of passive and active semiconductor devices

    E-Print Network [OSTI]

    Motamedi, Ali Reza

    2011-01-01T23:59:59.000Z

    Nonlinear optical properties and ultrafast carrier dynamics of slab-coupled optical waveguide amplifiers, silicon nanowaveguides, and III-V semiconductor saturable Bragg reflectors are studied. The limits imposed by two ...

  1. Differential method of analysis of luminescence spectra of semiconductors

    SciTech Connect (OSTI)

    Emel'yanov, A. M., E-mail: Emelyanov@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

    2010-09-15T23:59:59.000Z

    A method for analyzing the luminescence spectra of semiconductors is suggested. The method is based on differentiation of the spectra. The potentialities of the method are demonstrated for luminescence in the region of the fundamental absorption edge of Si and SiGe alloy single crystals. The method is superior in accuracy to previously known luminescence methods of determining the band gap of indirect-gap semiconductors and practically insensitive to different conditions of outputting radiation from the sample.

  2. Al-doped HfO2/In0.53Ga0.47As metal-oxide-semiconductor capaci

    E-Print Network [OSTI]

    Stemmer, Susanne

    2011-01-01T23:59:59.000Z

    MOS (Metal Oxide Semiconductor) Phys- ics and Technologywas funded by the Semiconductor Re- search Corporation0.47 As metal-oxide-semiconductor capacitors Yoontae Hwang,

  3. Reconditioning of semiconductor substrates to remove photoresist during semiconductor device fabrication

    DOE Patents [OSTI]

    Farino, Anthony J.

    2004-01-27T23:59:59.000Z

    A method for reconditioning the surface of a semiconductor substrate to remove an unwanted (i.e. defective) layer of photoresist is disclosed. The method adapts a conventional automated spinner which is used to rotate the substrate at high speed while a stream of a first solvent (e.g. acetone) is used to dissolve the photoresist. A stream of a second solvent (e.g. methanol) is then used to clean the substrate at a lower speed, with the substrate being allowed to dry with continued rotation. The method of the present invention can be used within a photolithography track so that the substrates need never leave the track for reconditioning.

  4. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOE Patents [OSTI]

    Weiss, Shimon (Pinole, CA); Bruchez, Jr., Marcel (Albany, CA); Alivisatos, Paul (Oakland, CA)

    2008-01-01T23:59:59.000Z

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) an affinity molecule linked to the semiconductor nanocrystal. The semiconductor nanocrystal is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Exposure of the semiconductor nanocrystal to excitation energy will excite the semiconductor nanocrystal causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  5. Characterization and electrical modeling of semiconductors bridges

    SciTech Connect (OSTI)

    Marx, K.D. [Sandia National Labs., Livermore, CA (United States); Bickes, R.W. Jr.; Wackerbarth, D.E. [Sandia National Labs., Albuquerque, NM (United States)

    1997-03-01T23:59:59.000Z

    Semiconductor bridges (SCBs) are finding increased use as initiators for explosive and pyrotechnic devices. They offer advantages in reduced voltage and energy requirements, coupled with excellent safety features. The design of explosive systems which implement either SCBs or metal bridgewires can be facilitated through the use of electrical simulation software such as the PSpice{reg_sign} computer code. A key component in the electrical simulation of such systems is an electrical model of the bridge. This report has two objectives: (1) to present and characterize electrical data taken in tests of detonators which employ SCBs with BNCP as the explosive powder; and (2) to derive appropriate electrical models for such detonators. The basis of such models is a description of the resistance as a function of energy deposited in the SCB. However, two important features which must be added to this are (1) the inclusion of energy loss through such mechanisms as ohmic heating of the aluminum lands and heat transfer from the bridge to the surrounding media; and (2) accounting for energy deposited in the SCB through heat transfer to the bridge from the explosive powder after the powder ignites. The modeling procedure is entirely empirical; i.e., models for the SCB resistance and the energy gain and loss have been estimated from experimental data taken over a range of firing conditions. We present results obtained by applying the model to the simulation of SCB operation in representative tests.

  6. Competing interactions in semiconductor quantum dots

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    van den Berg, R.; Brandino, G. P.; El Araby, O.; Konik, R. M.; Gritsev, V.; Caux, J. -S.

    2014-10-01T23:59:59.000Z

    We introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free induction decay and spin echo simulations we characterize the combined effect of both types of interactions on the decoherence of the electron spin, for external fields ranging from low to high values. We show that for spin echo simulations the hyperfine interaction is the dominant source of decoherence at short times for low fields, and competes with the dipole-dipole interactions at longer times. Onmore »the contrary, at high fields the main source of decay is due to the dipole-dipole interactions. In the latter regime an asymmetry in the echo is observed. Furthermore, the non-decaying fraction previously observed for zero field free induction decay simulations in quantum dots with only hyperfine interactions, is destroyed for longer times by the mean-field treatment of the dipolar interactions.« less

  7. Competing interactions in semiconductor quantum dots

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    van den Berg, R. [Univ. of Amsterdam (Netherlands). Inst. for Theoretical Physics; Brandino, G. P. [Univ. of Amsterdam (Netherlands). Inst. for Theoretical Physics; El Araby, O. [Univ. of Amsterdam (Netherlands). Inst. for Theoretical Physics; Konik, R. M. [Brookhaven National Lab. (BNL), Upton, NY (United States); Gritsev, V. [Univ. of Amsterdam (Netherlands). Inst. for Theoretical Physics; Caux, J. -S. [Univ. of Amsterdam (Netherlands). Inst. for Theoretical Physics

    2014-10-01T23:59:59.000Z

    We introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free induction decay and spin echo simulations we characterize the combined effect of both types of interactions on the decoherence of the electron spin, for external fields ranging from low to high values. We show that for spin echo simulations the hyperfine interaction is the dominant source of decoherence at short times for low fields, and competes with the dipole-dipole interactions at longer times. On the contrary, at high fields the main source of decay is due to the dipole-dipole interactions. In the latter regime an asymmetry in the echo is observed. Furthermore, the non-decaying fraction previously observed for zero field free induction decay simulations in quantum dots with only hyperfine interactions, is destroyed for longer times by the mean-field treatment of the dipolar interactions.

  8. M5-Branes, D4-Branes and Quantum 5D super-Yang-Mills

    E-Print Network [OSTI]

    Neil Lambert; Constantinos Papageorgakis; Maximilian Schmidt-Sommerfeld

    2011-02-22T23:59:59.000Z

    We revisit the relation of the six-dimensional (2,0) M5-brane Conformal Field Theory compactified on a circle to 5D maximally supersymmetric Yang-Mills Gauge Theory. We show that in the broken phase 5D super-Yang-Mills contains a spectrum of soliton states that can be identified with the complete Kaluza-Klein modes of an M2-brane ending on the M5-branes. This provides evidence that the (2,0) theory on a circle is equivalent to 5D super-Yang-Mills with no additional UV degrees of freedom, suggesting that the latter is in fact a well-defined quantum theory and possibly finite.

  9. Synthesis, Characterization, and Ultrafast Dynamics of Metal, Metal Oxide, and Semiconductor Nanomaterials

    E-Print Network [OSTI]

    Wheeler, Damon Andreas

    2013-01-01T23:59:59.000Z

    Yang, Z. ; Zhang, R. ; Cheng, Z. ; Elliot, A. M. ; Stafford,C. ; Wei, Z. G. ; Xie, S. G. ; Cheng, Z. J. ; Xiao, C. M. ,

  10. String theories as the adiabatic limit of Yang-Mills theory

    E-Print Network [OSTI]

    Alexander D. Popov

    2015-07-14T23:59:59.000Z

    We consider Yang-Mills theory with a matrix gauge group $G$ on a direct product manifold $M=\\Sigma_2\\times H^2$, where $\\Sigma_2$ is a two-dimensional Lorentzian manifold and $H^2$ is a two-dimensional open disc with the boundary $S^1=\\partial H^2$. The Euler-Lagrange equations for the metric on $\\Sigma_2$ yield constraint equations for the Yang-Mills energy-momentum tensor. We show that in the adiabatic limit, when the metric on $H^2$ is scaled down, the Yang-Mills equations plus constraints on the energy-momentum tensor become the equations describing strings with a worldsheet $\\Sigma_2$ moving in the based loop group $\\Omega G=C^\\infty (S^1, G)/G$, where $S^1$ is the boundary of $H^2$. By choosing $G=R^{d-1, 1}$ and putting to zero all parameters in $\\Omega R^{d-1, 1}$ besides $R^{d-1, 1}$, we get a string moving in $R^{d-1, 1}$. In arXiv:1506.02175 it was described how one can obtain the Green-Schwarz superstring action from Yang-Mills theory on $\\Sigma_2\\times H^2$ while $H^2$ shrinks to a point. Here we also consider Yang-Mills theory on a three-dimensional manifold $\\Sigma_2\\times S^1$ and show that in the limit when the radius of $S^1$ tends to zero, the Yang-Mills action functional supplemented by a Wess-Zumino-type term becomes the Green-Schwarz superstring action.

  11. Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film

    E-Print Network [OSTI]

    Deng, Xunming

    Analytical model for the optical functions of amorphous semiconductors from the near functions of thin film semiconductors are useful for two important purposes, namely, materials, reflectance, and ellipso- metric spectra obtained on the thin film semiconductors. The conventional analysis

  12. SSSSSSSS LLLLSemiconductor System LabSemiconductor System LabSemiconductor System LabSemiconductor System Lab Jaeseo Lee, Gigabit Optical Interface IC Design 1

    E-Print Network [OSTI]

    Yoo, Hoi-Jun

    range Wide Bandwidth Low Noise amplifier is required!! 60~80dB 1) providing dc level restoration 2Semiconductor System Lab Design Goal · Gain range : 60~80dB (1k ~ 10k) · Wide bandwidth · Low Noise · CMOS · Motivation · Transimpedance Amplifier (TIA) ­ Why TIA? ­ Noise Source ­ TIA Noise & Design Solution

  13. NREL: Energy Analysis - Changgui Dong

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Saleshttp://www.fnal.gov/directorate/nalcal/nalcal02_07_05_files/nalcal.gifNRELPower Systems EngineeringSigrin PhotoChad

  14. dong(2)-98.pdf

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron4 Self-Scrubbing:,, , ., ..., ,+ .-detonation detectionDocument1Physica5

  15. dong(2)-99.PDF

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron4 Self-Scrubbing:,, , ., ..., ,+ .-detonation

  16. dong(3)-98.pdf

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron4 Self-Scrubbing:,, , ., ..., ,+ .-detonation7 Comparison of Stratus

  17. Disordered electronic and magnetic systems - transition metal (Mn) and rare earth (Gd) doped amorphous group IV semiconductors (C, Si, Ge)

    E-Print Network [OSTI]

    Zeng, Li

    2007-01-01T23:59:59.000Z

    magnetic semiconductors: the europium chalcogenides. Phys.Classic examples are europium chalcogenides [3], Gd 3?x ? xmagnetic semiconductor europium chalcogenides, where the

  18. Spin-polarized lasing in a highly photoexcited semiconductor microcavity

    E-Print Network [OSTI]

    Hsu, Feng-kuo; Lee, Yi-Shan; Lin, Sheng-Di; Lai, Chih-Wei

    2015-01-01T23:59:59.000Z

    Lasing in semiconductors is generally independent of the spins of electrons and holes, which constitute the gain medium. However, in a few spin-controlled lasers, spin-polarized carriers with long spin relaxation times ($\\sim$1 ns) result in continuous or sub-nanosecond pulsed circularly polarized stimulated emission. In these spin-controlled semiconductor lasers, a spin-imbalanced population inversion has been considered necessary. Here, we demonstrate room-temperature spin-polarized ultrafast ($\\sim$10 ps) lasing in a highly optically excited GaAs microcavity embedded with InGaAs multiple quantum wells within which the spin relaxation time is less than 10 ps. The laser radiation remains highly circularly polarized even when excited by \\emph{nonresonant} \\emph{elliptically} polarized light. In contrast to conventional semiconductor lasers, it exhibits a nonlinear input-output relation, energy shifts, and spectral broadening as a function of the photoexcited density. Such spin-polarized lasing is attributed t...

  19. Efficient semiconductor light-emitting device and method

    DOE Patents [OSTI]

    Choquette, Kent D. (Albuquerque, NM); Lear, Kevin L. (Albuquerque, NM); Schneider, Jr., Richard P. (Albuquerque, NM)

    1996-01-01T23:59:59.000Z

    A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

  20. Efficient semiconductor light-emitting device and method

    DOE Patents [OSTI]

    Choquette, K.D.; Lear, K.L.; Schneider, R.P. Jr.

    1996-02-20T23:59:59.000Z

    A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

  1. Wafer Fusion for Integration of Semiconductor Materials and Devices

    SciTech Connect (OSTI)

    Choquette, K.D.; Geib, K.M.; Hou, H.Q.; Allerman, A.A.; Kravitz, S.; Follstaedt, D.M.; Hindi, J.J.

    1999-05-01T23:59:59.000Z

    We have developed a wafer fusion technology to achieve integration of semiconductor materials and heterostructures with widely disparate lattice parameters, electronic properties, and/or optical properties for novel devices not now possible on any one substrate. Using our simple fusion process which uses low temperature (400-600 C) anneals in inert N{sub 2} gas, we have extended the scope of this technology to examine hybrid integration of dissimilar device technologies. As a specific example, we demonstrate wafer bonding vertical cavity surface emitting lasers (VCSELs) to transparent AlGaAs and GaP substrates to fabricate bottom-emitting short wavelength VCSELs. As a baseline fabrication technology applicable to many semiconductor systems, wafer fusion will revolutionize the way we think about possible semiconductor devices, and enable novel device configurations not possible by epitaxial growth.

  2. OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES

    SciTech Connect (OSTI)

    Grant, C D; Zhang, J Z

    2007-09-28T23:59:59.000Z

    This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

  3. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12T23:59:59.000Z

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  4. Wavelength-resonant surface-emitting semiconductor laser

    DOE Patents [OSTI]

    Brueck, Steven R. J. (Albuquerque, NM); Schaus, Christian F. (Albuquerque, NM); Osinski, Marek A. (Albuquerque, NM); McInerney, John G. (Cedar Crest, NM); Raja, M. Yasin A. (Albuquerque, NM); Brennan, Thomas M. (Albuquerque, NM); Hammons, Burrell E. (Tijeras, NM)

    1989-01-01T23:59:59.000Z

    A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

  5. Adaptive feedback control of ultrafast semiconductor nonlinearities J. Kunde,a)

    E-Print Network [OSTI]

    Keller, Ursula

    that adaptive feedback optical pulse shaping can be used to control ultrafast semiconductor nonlinearities insight into the interaction of semiconduc- tors and ultrafast optical pulses. Specifically, we develop spectroscopy. More- over, the optimized pulse shape can substantially enhance ultrafast semiconductor

  6. Semiconductor wire array structures, and solar cells and photodetectors based on such structures

    DOE Patents [OSTI]

    Kelzenberg, Michael D.; Atwater, Harry A.; Briggs, Ryan M.; Boettcher, Shannon W.; Lewis, Nathan S.; Petykiewicz, Jan A.

    2014-08-19T23:59:59.000Z

    A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

  7. Coherence Optimization of Vertical Cavity Semiconductor Optical Michael Snchez*a

    E-Print Network [OSTI]

    Esener, Sadik C.

    Coherence Optimization of Vertical Cavity Semiconductor Optical Amplifiers Michael Sánchez Dept., University of California - San Diego ABSTRACT Vertical cavity semiconductor optical amplifiers (VCSOAs) are attractive devices for use in coherent optical amplification, especially where 2-D amplifier

  8. Fluorine doping in dilute magnetic semiconductor Sn1–xFexO2...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Fluorine doping in dilute magnetic semiconductor Sn1–xFexO2. Fluorine doping in dilute magnetic semiconductor Sn1–xFexO2. Abstract: Recent studies have reported...

  9. Optimization of Preventive Maintenance Scheduling in Semiconductor Manufacturing Models Using a Simulation-Based Approximate

    E-Print Network [OSTI]

    Fernandez, Emmanuel

    Optimization of Preventive Maintenance Scheduling in Semiconductor Manufacturing Models Using Dynamic Programming (ADP) approach for the optimization of Preventive Maintenance (PM) scheduling schedules. I. INTRODUCTION In semiconductor manufacturing systems, or fabs, pre- ventive maintenance (PM

  10. Statistical Algorithms for Simulation of Electron Quantum Kinetics in Semiconductors -Part II

    E-Print Network [OSTI]

    Whitlock, Paula

    Statistical Algorithms for Simulation of Electron Quantum Kinetics in Semiconductors - Part II M describes the relaxation of semiconductor elec- trons initially excited by a laser pulse [1]. The equation

  11. Operations improvement in a semiconductor capital equipment manufacturing plant : component level and assembly level inventory management

    E-Print Network [OSTI]

    Wu, Yiming, M. Eng. Massachusetts Institute of Technology

    2012-01-01T23:59:59.000Z

    Semiconductor capital equipment is manufactured in a high-mix and low-volume environment at Varian Semiconductor Equipment business unit of Applied Materials. Due to the demand growth over the past years, Varian has been ...

  12. Insulators, long-range interactions, and genome function Jingping Yang and Victor G Corces

    E-Print Network [OSTI]

    Corces, Victor G.

    Insulators, long-range interactions, and genome function Jingping Yang and Victor G Corces Insulators are DNA­protein complexes that can mediate interactions in cis or trans between different regions together by contacts between specific insulator sites. Here we provide an overview of new evidence that has

  13. An Efficient PIR Construction Using Trusted Yanjiang Yang1,2

    E-Print Network [OSTI]

    Ding, Xuhua

    An Efficient PIR Construction Using Trusted Hardware Yanjiang Yang1,2 , Xuhua Ding1 , Robert H (PIR) scheme to be de- ployed in practice, low communication complexity and low computation complexity are two fundamental requirements it must meet. Most ex- isting PIR schemes only focus on the communication

  14. Wireless ad hoc networks Acknowledgement: Slides borrowed from Richard Y. Yang @ Yale

    E-Print Network [OSTI]

    Gao, Jie

    are not flexible. ­ Vulnerable to attacks. · Ad hoc networks· Ad hoc networks ­ Flexible, easy to deploy, cheaper · Optimal power assignment /transmission range · Optimal scheduling & multi-hop routing · Node are staticWireless ad hoc networks Acknowledgement: Slides borrowed from Richard Y. Yang @ Yale #12

  15. Feedforward Control of a Piezoelectric Flexure Stage for AFM Yang Li and John Bechhoefer

    E-Print Network [OSTI]

    Bechhoefer, John

    to physics [1], [2]; by the publication, by control engineers, of the first textbook on modern control theory of an interesting "cross-over" work that analyzes physical systems from a control perspective [4]. While influencesFeedforward Control of a Piezoelectric Flexure Stage for AFM Yang Li and John Bechhoefer Abstract

  16. Ventilation and Air Quality in Indoor Ice Skating Arenas Chunxin Yang, Ph.D.1

    E-Print Network [OSTI]

    Chen, Qingyan "Yan"

    Ventilation and Air Quality in Indoor Ice Skating Arenas Chunxin Yang, Ph.D.1 Philip Demokritou, and the operation strategy of the ventilation system are significant contributing factors to the indoor air quality exchange rate, air distribution method, and ventilation control strategies on the IAQ in an arena. With CFD

  17. 2PI Effective Action and Evolution Equations of N = 4 super Yang-Mills

    E-Print Network [OSTI]

    Jelena Smolic; Milena Smolic

    2012-12-07T23:59:59.000Z

    We employ nPI effective action techniques to study N = 4 super Yang-Mills, and write down the 2PI effective action of the theory. We also supply the evolution equations of two-point correlators within the theory.

  18. Calibration of a Hybrid Camera Network Xilin Chen Jie Yang Alex Waibel

    E-Print Network [OSTI]

    Chen, Xilin

    Calibration of a Hybrid Camera Network Xilin Chen Jie Yang Alex Waibel School of Computer Science}@cs.cmu.edu ABSTRACT Visual surveillance using a camera network has imposed new challenges to camera calibration different cameras can be then calibrated under the catadioptric camera's coordinate system. This paper

  19. Adsorption structure and doping effect of azidotrimethyltin on graphene , S.N. Yang b

    E-Print Network [OSTI]

    Kim, Sehun

    Adsorption structure and doping effect of azidotrimethyltin on graphene J. Choi a , S.N. Yang b , K Graphene Chemical functionalization Synchrotron Photoemission spectroscopy a b s t r a c t The adsorption demonstrate the variation of characteristic of graphene induced by the chemical functionalized molecule as we

  20. Scattering amplitudes in N=2 Maxwell-Einstein and Yang-Mills/Einstein supergravity

    E-Print Network [OSTI]

    Marco Chiodaroli; Murat Gunaydin; Henrik Johansson; Radu Roiban

    2015-02-03T23:59:59.000Z

    We expose a double-copy structure in the scattering amplitudes of the generic Jordan family of N=2 Maxwell-Einstein and Yang-Mills/Einstein supergravity theories in four and five dimensions. The Maxwell-Einstein supergravity amplitudes are obtained through the color/kinematics duality as a product of two gauge-theory factors; one originating from pure N=2 super-Yang-Mills theory and the other from the dimensional reduction of a bosonic higher-dimensional pure Yang-Mills theory. We identify a specific symplectic frame in four dimensions for which the on-shell fields and amplitudes from the double-copy construction can be identified with the ones obtained from the supergravity Lagrangian and Feynman-rule computations. The Yang-Mills/Einstein supergravity theories are obtained by gauging a compact subgroup of the isometry group of their Maxwell-Einstein counterparts. For the generic Jordan family this process is identified with the introduction of cubic scalar couplings on the bosonic gauge-theory side, which through the double copy are responsible for the non-abelian vector interactions in the supergravity theory. As a demonstration of the power of this structure, we present explicit computations at tree-level and one loop. The double-copy construction allows us to obtain compact expressions for the supergravity superamplitudes which are naturally organized as polynomials in the gauge coupling constant.

  1. UCSF Chimera, MODELLER, and IMP: An integrated modeling system Zheng Yang a

    E-Print Network [OSTI]

    Sali, Andrej

    UCSF Chimera, MODELLER, and IMP: An integrated modeling system Zheng Yang a , Keren Lasker b we present the integration of several modeling tools into UCSF Chimera. These include com- parative probabilities and local interactions by Chimera. Ã? 2011 Published by Elsevier Inc. 1. Introduction Proteins

  2. Dandelion: Cooperative Content Distribution with Robust Incentives Michael Sirivianos Xiaowei Yang Stanislaw Jarecki

    E-Print Network [OSTI]

    Pâris, Jehan-François

    Dandelion: Cooperative Content Distribution with Robust Incentives Michael Sirivianos Xiaowei Yang in coopera- tive content distribution. First, it provides robust incentives for clients who possess content- Web [13,24, 30, 36] lack a viable economic model to scale. This work explores a cost

  3. Dandelion: Cooperative Content Distribution with Robust Incentives Michael Sirivianos Xiaowei Yang Stanislaw Jarecski

    E-Print Network [OSTI]

    Yang, Xiaowei

    Dandelion: Cooperative Content Distribution with Robust Incentives Michael Sirivianos Xiaowei Yang- tive content distribution. First, it provides robust incentives for clients who possess content- Web [11,20, 26, 31] lack a viable economic model to scale. This work explores a cost

  4. Gauge theory deformations and novel Yang-Mills Chern-Simons field theories with torsion

    E-Print Network [OSTI]

    Stephen C. Anco

    2004-09-16T23:59:59.000Z

    A basic problem of classical field theory, which has attracted growing attention over the past decade, is to find and classify all nonlinear deformations of linear abelian gauge theories. The first part of this paper summarizes and significantly elaborates a field- theoretic deformation method developed in earlier work. As a key contribution presented here, a universal geometrical structure common to a large class of nonlinear gauge theory examples is uncovered. This structure is derived geometrically from the deformed gauge symmetry and is characterized by a covariant derivative operator plus a nonlinear field strength, related through the curvature of the covariant derivative. The scope of these results encompasses Yang-Mills theory, Freedman-Townsend theory, Einstein gravity theory, in addition to their many interesting types of novel generalizations that have been found in the past several years. The second part of the paper presents a new geometrical type of Yang-Mills generalization in three dimensions motivated from considering torsion in the context of nonlinear sigma models with Lie group targets (chiral theories). The generalization is derived by a deformation analysis of linear abelian Yang-Mills Chern-Simons gauge theory. Torsion is introduced geometrically through a duality with chiral models obtained from the chiral field form of self-dual 2+2 dimensional Yang-Mills theory under reduction to 2+1 dimensions. Field-theoretic and geometric features of the resulting nonlinear gauge theories with torsion are discussed.

  5. Practicality-Based Probabilistic Roadmaps Method Jing Yang, Patrick Dymond and Michael Jenkin

    E-Print Network [OSTI]

    Jenkin, Michael R. M.

    Practicality-Based Probabilistic Roadmaps Method Jing Yang, Patrick Dymond and Michael Jenkin: {jyang, jenkin, dymond}@cse.yorku.ca Abstract--Probabilistic roadmap methods (PRMs) are a commonly used roadmap can then be used to generate more practical paths. The approach is general and can be adapted

  6. Newton-conjugate-gradient methods for solitary wave computations Jianke Yang

    E-Print Network [OSTI]

    Yang, Jianke

    Newton-conjugate-gradient methods for solitary wave computations Jianke Yang Department's method Conjugate-gradient methods a b s t r a c t In this paper, the Newton-conjugate-gradient methods the linearization operator is self-adjoint, the preconditioned conjugate-gradient method is pro- posed to solve

  7. CO3097 Programming Secure and Distributed Systems Credits: 20 Convenor: Dr. S. Yang Semester: 1st

    E-Print Network [OSTI]

    Yang, Shengxiang

    CO3097 Programming Secure and Distributed Systems Credits: 20 Convenor: Dr. S. Yang Semester: 1st and distributed applica- tions in Java. The course covers both the fundamental problems facing distributed be tackled and implemented in Java. Learning Outcomes Students will be able to: build simple distributed

  8. Optical signature of topological insulators Ming-Che Chang1,* and Min-Fong Yang2,

    E-Print Network [OSTI]

    Chang, Ming-Che

    Optical signature of topological insulators Ming-Che Chang1,* and Min-Fong Yang2, 1Department 16 September 2009 The axion coupling in topological insulators couples electric polarization, 73.20. r, 78.20. e I. INTRODUCTION A distinctive property of topological insulators is the ex

  9. A self-powered electrochromic device driven by a nanogenerator Xiaohong Yang,ab

    E-Print Network [OSTI]

    Wang, Zhong L.

    A self-powered electrochromic device driven by a nanogenerator Xiaohong Yang,ab Guang Zhu,a Sihong September 2012 DOI: 10.1039/c2ee23194h Electrochromic (EC) devices are capable of reversibly changing.3% was obtained, with electrochromic response time (ERT) and coloration efficiency (CE) of 10 seconds and 58.7 cm2

  10. Availability-Based Path Selection Song Yang, Stojan Trajanovski and Fernando A. Kuipers

    E-Print Network [OSTI]

    Kuipers, Fernando A.

    Availability-Based Path Selection Song Yang, Stojan Trajanovski and Fernando A. Kuipers Delft communication networks, connection avail- ability, which is defined as the probability that the corresponding). The path over which a connection is to be established should obey the agreed-upon availability, otherwise

  11. Chaotic Dynamics of Spin-Valve Oscillators Z. Yang and S. Zhang

    E-Print Network [OSTI]

    Li, Charles

    Chaotic Dynamics of Spin-Valve Oscillators Z. Yang and S. Zhang Department of Physics and Astronomy oscillators with tunable mi- crowave frequencies in spin valves are very desirable for magnetic storage it is not an intrinsic property of the current-driven oscillator. Here we consider a single-domain current-driven spin-valve

  12. Nanowire-Based All-Oxide Solar Cells Benjamin D. Yuhas and Peidong Yang*

    E-Print Network [OSTI]

    Yang, Peidong

    electricity cost from a silicon solar cell well above that which comes from coal- or gas-burning power plantsNanowire-Based All-Oxide Solar Cells Benjamin D. Yuhas and Peidong Yang* Department of Chemistry present an all-oxide solar cell fabricated from vertically oriented zinc oxide nanowires and cuprous oxide

  13. Description of the dip in meson-proton elastic scattering by the Chou-Yang model

    SciTech Connect (OSTI)

    Bellandi F., J.; Covolan, R.J.M.; Menon, M.J.; Pimentel, B.M.

    1988-01-01T23:59:59.000Z

    We show it is possible to reproduce the correct localization of the dip and bump structure in the meson-proton elastic scattering by using the Chou-Yang model with a modification which consists in expressing the eikonal in momentum-transfer space as the product of the form factors times a function that carries zero.

  14. Bonus Yangian Symmetry for the Planar S-Matrix of N=4 Super Yang-Mills

    E-Print Network [OSTI]

    Beisert, Niklas

    2011-01-01T23:59:59.000Z

    Recent developments in the determination of the planar S-matrix of N=4 Super Yang-Mills are closely related to its Yangian symmetry. Here we provide evidence for a yet unobserved additional symmetry: the Yangian level-one helicity operator.

  15. Bonus Yangian Symmetry for the Planar S-Matrix of N=4 Super Yang-Mills

    E-Print Network [OSTI]

    Niklas Beisert; Burkhard U. W. Schwab

    2011-06-08T23:59:59.000Z

    Recent developments in the determination of the planar S-matrix of N=4 Super Yang-Mills are closely related to its Yangian symmetry. Here we provide evidence for a yet unobserved additional symmetry: the Yangian level-one helicity operator.

  16. Bonus Yangian Symmetry for the Planar S Matrix of N=4 Supersymmetric Yang-Mills Theory

    SciTech Connect (OSTI)

    Beisert, Niklas; Schwab, Burkhard U. W. [Max-Planck-Institut fuer Gravitationsphysik (Albert-Einstein-Institut), Am Muehlenberg 1, 14476 Potsdam (Germany)

    2011-06-10T23:59:59.000Z

    Recent developments in the determination of the planar S matrix of N=4 super Yang-Mills are closely related to its Yangian symmetry. Here we provide evidence for a yet unobserved additional symmetry: the Yangian level-one helicity operator.

  17. A 90nm CMOS Direct Conversion Transmitter for WCDMA Xuemin Yang1

    E-Print Network [OSTI]

    A 90nm CMOS Direct Conversion Transmitter for WCDMA Xuemin Yang1 , Anosh Davierwalla2 , David Mann3 IBM, Burlington, VT Abstract -- A linear high output power CMOS direct conversion transmitter for wideÃ?5 QFN. Index Terms -- direct conversion, CMOS, WCDMA, transmitter, third order distortion cancellation

  18. Measurement of microbial nitrogen flow in the duodenum in sheep WZ Yang, C Poncet

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    composition and distribution of LAB and adherent biomasses expressed as &dquo;solid adherent bacteria- scribed by Yang et al (1989). Cr-EDTA and 15N, continuously infused for 5 d and 3 d respectively before sampling, were used as flow and micro- bial markers. LAB biomasse in the rumen efflu- ent was estimated as

  19. A Jitter Attenuating Timing Chain Suwen Yang, Mark R. Greenstreet and Jihong Ren #

    E-Print Network [OSTI]

    Greenstreet, Mark

    A Jitter Attenuating Timing Chain Suwen Yang, Mark R. Greenstreet and Jihong Ren # {swyang, mrg}@cs.ubc.ca, jihongr@gmail.com Abstract A long chain of inverters and wire segments will am­ plify clock jitter and drop timing pulses due to inter­ symbol interference. We present a jitter attenuating buffer based

  20. Heat transfer and friction characteristics of air flow in microtubes Chien-Yuh Yang a,

    E-Print Network [OSTI]

    Kandlikar, Satish

    Heat transfer and friction characteristics of air flow in microtubes Chien-Yuh Yang a, , Chia September 2011 Keywords: Microtube Heat transfer Liquid Crystal Thermography a b s t r a c t Several researches dealing with the single-phase forced convection heat transfer inside microchannels have been

  1. Dynamics of static friction between steel and silicon Zhiping Yang, H. P. Zhang, and M. Marder

    E-Print Network [OSTI]

    Texas at Austin. University of

    Dynamics of static friction between steel and silicon Zhiping Yang, H. P. Zhang, and M. Marder 4, 2008) We conducted experiments in which steel and silicon or quartz are clamped together. Even experiments where silicon and quartz are clamped on steel, motion is measured down to the nanometer scale

  2. Towards A Structural Load Testing Tool CheerSun D. Yang and Lori L. Pollock

    E-Print Network [OSTI]

    Pollock, Lori L.

    by the tester within an operational profile. This method of load testing is applied at system inte­ gration timeTowards A Structural Load Testing Tool Cheer­Sun D. Yang and Lori L. Pollock Department of Computer and Information Sciences University of Delaware Newark, DE 19716 (302) 831­1953 Abstract Load sensitive faults

  3. A Language for Automatically Enforcing Privacy Policies Jean Yang Kuat Yessenov Armando Solar-Lezama

    E-Print Network [OSTI]

    A Language for Automatically Enforcing Privacy Policies Jean Yang Kuat Yessenov Armando Solar for applications to protect sensitive data. With current techniques, the programmer bears the burden of ensuring views are allowed based on the output context. The system is respon- sible for automatically ensuring

  4. Seismic Data Reconstruction via Matrix Yi Yang, Jianwei Ma and Stanley Osher

    E-Print Network [OSTI]

    Soatto, Stefano

    1 Seismic Data Reconstruction via Matrix Completion Yi Yang, Jianwei Ma and Stanley Osher Abstract In seismic processing, one goal is to recover missing traces when the data is sparsely and incom- pletelyFit) are discussed in this paper. The seismic data can then be recovered by the conversion of the completed matrix

  5. Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field

    SciTech Connect (OSTI)

    Filippov, V. V., E-mail: wwfilippow@mail.ru [Lipetsk State Pedagogical University (Russian Federation); Bormontov, E. N. [Voronezh State University (Russian Federation)

    2013-07-15T23:59:59.000Z

    A macroscopic model of the Hall effects and magnetoresistance in anisotropic semiconductor wafers is developed. The results obtained by solving the electrodynamic boundary problem allow the potential and eddy currents in anisotropic semiconductors to be calculated at different current-contact locations, depending on the parameters of the sample material's anisotropy. The results of this study are of great practical importance for investigating the physical properties of anisotropic semiconductors and simulating the electron-transport phenomena in devices based on anisotropic semiconductors.

  6. SPECTROSCOPIE DE DEFAUTS -LUMINESCENCE I. THE ANALYSIS OF WIDE BAND GAP SEMICONDUCTORS

    E-Print Network [OSTI]

    Boyer, Edmond

    on analysis depend very much on the device. In semiconductors, light emitting diodes (LEDs) are formed from pn

  7. Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication

    DOE Patents [OSTI]

    Sopori, Bhushan

    2014-05-27T23:59:59.000Z

    Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.

  8. Low temperature production of large-grain polycrystalline semiconductors

    DOE Patents [OSTI]

    Naseem, Hameed A. (Fayetteville, AR); Albarghouti, Marwan (Loudonville, NY)

    2007-04-10T23:59:59.000Z

    An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

  9. A proposal for Coulomb assisted laser cooling of piezoelectric semiconductors

    SciTech Connect (OSTI)

    Nia, Iman Hassani; Mohseni, Hooman, E-mail: hmohseni@ece.northwestern.edu [Bio-Inspired Sensors and Optoelectronics Laboratory (BISOL), Department of Electrical Engineering, Northwestern University, Evanston, Illinois 60208 (United States)

    2014-07-28T23:59:59.000Z

    Anti-Stokes laser cooling of semiconductors as a compact and vibration-free method is very attractive. While it has achieved significant milestones, increasing its efficiency is highly desirable. The main limitation is the lack of the pristine material quality with high luminescence efficiency. Here, we theoretically demonstrate that the Coulomb interaction among electrons and holes in piezoelectric heterostructures could lead to coherent damping of acoustic phonons; rendering a significantly higher efficiency that leads to the possibility of cooling a broad range of semiconductors.

  10. Controlled Chemical Doping of Semiconductor Nanocrystals Using Redox Buffers

    SciTech Connect (OSTI)

    Engel, Jesse H.; Surendranath, Yogesh; Alivisatos, Paul

    2013-07-09T23:59:59.000Z

    Semiconductor nanocrystal solids are attractive materials for active layers in next-generation optoelectronic devices; however, their efficient implementation has been impeded by the lack of precise control over dopant concentrations. Herein we demonstrate a chemical strategy for the controlled doping of nanocrystal solids under equilibrium conditions. Exposing lead selenide nanocrystal thin films to solutions containing varying proportions of decamethylferrocene and decamethylferrocenium incrementally and reversibly increased the carrier concentration in the solid by 2 orders of magnitude from their native values. This application of redox buffers for controlled doping provides a new method for the precise control of the majority carrier concentration in porous semiconductor thin films.

  11. Semiconductor ridge microcavity source of quantum light at room temperature

    E-Print Network [OSTI]

    X. Caillet; A. Orieux; A. Lemaitre; P. Filloux; I. Favero; G. Leo; S. Ducci

    2009-10-31T23:59:59.000Z

    We experimentally demonstrate an integrated semiconductor ridge microcavity source of counterpropagating twin photons at room temperature in the telecom range. Based on parametric down conversion with a counterpropagating phase-matching, pump photons generate photon pairs with an efficiency of about 10^(-11) and a spectral linewidth of 0.3 nm for a 1mm long sample. The indistiguishability of the photons of the pair are measured via a two-photon interference experiment showing a visibility of 85%. This work opens a route towards new guided-wave semiconductor quantum devices.

  12. Entrainment by Spatiotemporal Chaos in Glow Discharge-Semiconductor Systems

    E-Print Network [OSTI]

    Marat Akhmet; Ismail Rafatov; Mehmet Onur Fen

    2014-06-15T23:59:59.000Z

    Entrainment of limit cycles by chaos [1] is discovered numerically through specially designed unidirectional coupling of two glow discharge-semiconductor systems. By utilizing the auxiliary system approach [2], it is verified that the phenomenon is not a chaos synchronization. Simulations demonstrate various aspects of the chaos appearance in both drive and response systems. Chaotic control is through the external circuit equation and governs the electrical potential on the boundary. The expandability of the theory to collectives of glow discharge systems is discussed, and this increases the potential of applications of the results. Moreover, the research completes the previous discussion of the chaos appearance in a glow discharge-semiconductor system [3].

  13. Thin film reactions on alloy semiconductor substrates

    SciTech Connect (OSTI)

    Olson, D.A.

    1990-11-01T23:59:59.000Z

    The interactions between Pt and In{sub .53}Ga{sub .47}As have been studied. In{sub .53}Ga{sub .47}As substrates with 70nm Pt films were encapsulated in SiO{sub 2}, and annealed up to 600{degree}C in flowing forming gas. The composition and morphology of the reaction product phases were studied using x-ray diffraction, Auger depth profiling, and transmission electron microscopy. The reaction kinetics were examined with Rutherford Backscattering. Results show that Pt/In{sub .53}Ga{sub .47}As reacts to form many of the reaction products encountered in the Pt/GaAs and Pt/InP reactions: PtGa, Pt{sub 3}Ga, and PtAs{sub 2}. In addition, a ternary phase, Pt(In:Ga){sub 2}, develops, which is a solid solution between PtIn{sub 2} and PtGa{sub 2}. The amount of Ga in the ternary phase increases with annealing temperature, which causes a decrease in the lattice parameter of the phase. The reaction products show a tendency to form layered structures, especially for higher temperatures and longer annealing times. Unlike the binary case, the PtAs{sub 2}, phase is randomly oriented on the substrate, and is intermingle with a significant amount of Pt(In:Ga){sub 2}. Following Pt/In{sub .53}Ga{sub .47}As reactions, two orientation relationships between the Pt(In:Ga){sub 2} product phase and the substrate were observed, despite the large mismatch with the substrate ({approximately}8%). For many metal/compound semiconductor interactions, the reaction rate is diffusion limited, i.e. exhibits a parabolic dependence on time. An additional result of this study was the development of an In-rich layer beneath the reacted layer. The Auger depth profile showed a substantial increase in the sample at this layer. This is a significant result for the production of ohmic contacts, as the Schottky barrier height in this system lower for higher In concentrations. 216 refs.

  14. Metrology-Related Costs in the U.S. Semiconductor Industry,

    E-Print Network [OSTI]

    98-4 Planning Report Metrology-Related Costs in the U.S. Semiconductor Industry, 1990, 1996 Administration #12;Metrology-Related Costs in the U.S. Semiconductor Industry, 1990, 1996 and 2001 NIST Contract Acknowledgements 5 II. Defining Metrology-Related Costs in the Semiconductor Industry 6 A. Physical Measurements

  15. Simulation of a tunable optically pumped terahertz intersubband laser with diluted magnetic semiconductors

    E-Print Network [OSTI]

    Technische Universiteit Delft

    quantum well with a Zn1-xMnxSe diluted magnetic semiconductor barrier is presented. Giant Zeeman splitting in diluted magnetic semiconductors leads to splitting of electronic states, which in turn leads to tunability. INTRODUCTION Diluted magnetic semiconductors DMSs are semicon- ductor alloys partly composed of magnetic

  16. Time-dependent model for diluted magnetic semiconductors including band structure and confinement effects

    E-Print Network [OSTI]

    Boyer, Edmond

    Time-dependent model for diluted magnetic semiconductors including band structure and confinement dynamics in confined diluted magnetic semiconductors induced by laser. The hole-spin relaxation process light-induced magnetization dynamics in ferro- magnetic films and in diluted magnetic semiconductors DMS

  17. Photocatalytic Oxidation of Aqueous Organic Contaminants by Semiconductors using Visible Light Radiation

    E-Print Network [OSTI]

    Meyers, Steven D.

    Photocatalytic Oxidation of Aqueous Organic Contaminants by Semiconductors using Visible Light semiconductor, InVO4, mechanically alloyed to TiO2, to shift photo-initiation into the visible range. 3, the ratio of semiconductors had no significant impact on the reaction rate. Long term goal - develop

  18. Origin of the Variation of Exciton Binding Energy in Semiconductors Marc Dvorak,1

    E-Print Network [OSTI]

    Wu, Zhigang

    Origin of the Variation of Exciton Binding Energy in Semiconductors Marc Dvorak,1 Su-Huai Wei,2, and the exciton binding energy Eb in technologically important semiconductors varies from merely a few me between the electronic band structures and exciton binding energies in semiconductors, employing first

  19. Monte Carlo simulation of electron transport in degenerate and inhomogeneous semiconductors

    E-Print Network [OSTI]

    Monte Carlo simulation of electron transport in degenerate and inhomogeneous semiconductors Mona concentrations up to 1020 cm-3 . De- generate semiconductors are important for thermoelectric and thermionic transport in degenerate semiconductor-based structures. If the electron wavelength is smaller than

  20. Terahertz surface plasmon polaritons on a semiconductor surface structured with

    E-Print Network [OSTI]

    Murphy, Thomas E.

    Terahertz surface plasmon polaritons on a semiconductor surface structured with periodic V-doped silicon surface, using anisotropic wet-etching of crystalline silicon, thereby forming a plasmonic surfaces. © 2013 Optical Society of America OCIS codes: (240.6680) Surface plasmons; (240.6690) Surface

  1. Method for altering the luminescence of a semiconductor

    DOE Patents [OSTI]

    Barbour, J.C.; Dimos, D.B.

    1999-01-12T23:59:59.000Z

    A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region. 4 figs.

  2. IntroductiontoPowerSuppliesAN-556 National Semiconductor

    E-Print Network [OSTI]

    Paderborn, Universität

    TL G 10061 IntroductiontoPowerSuppliesAN-556 National Semiconductor Application Note 556 Ralph E ripple voltage to capacitor C1 The bridge rectifier circuit has a simple transformer but current must in a full-wave bridge for the same input voltage TL G 10061­1 FIGURE 1 Idealized Power Supply TL G 10061

  3. Metal-doped semiconductor nanoparticles and methods of synthesis thereof

    DOE Patents [OSTI]

    Ren, Zhifeng (Newton, MA); Chen, Gang (Carlisle, MA); Poudel, Bed (West Newton, MA); Kumar, Shankar (Newton, MA); Wang, Wenzhong (Beijing, CN); Dresselhaus, Mildred (Arlington, MA)

    2009-09-08T23:59:59.000Z

    The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

  4. Hydrogen in compound semiconductors M. D. McCluskeya)

    E-Print Network [OSTI]

    McCluskey, Matthew

    Hydrogen in compound semiconductors M. D. McCluskeya) and N. M. Johnson Xerox Palo Alto Research Center, Palo Alto, California 94304 Received 9 October 1998; accepted 18 December 1998 Hydrogen can consequence of hydrogenation is the passivation of dopant impurities, which leads to a decrease

  5. Mutually injecting semiconductor lasers: simulations for short and zero delay

    E-Print Network [OSTI]

    Wünsche, Hans-Jürgen "Ede"

    Mutually injecting semiconductor lasers: simulations for short and zero delay Nikolay Korneyev a und Stochastik, Mohrenstr. 39, 10117 Berlin, Germany ABSTRACT Distant lasers with mutual optical the relaxation oscillation period. In order to illuminate the role of these short delays, the ultimate zero

  6. Method for altering the luminescence of a semiconductor

    DOE Patents [OSTI]

    Barbour, J. Charles (Albuquerque, NM); Dimos, Duane B. (Albuquerque, NM)

    1999-01-01T23:59:59.000Z

    A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region.

  7. Control of mutual phase locking of monolithically integrated semiconductor lasers

    SciTech Connect (OSTI)

    Kapon, E.; Katz, J.; Lindsey, C.; Margalit, S.; Yariv, A.

    1983-09-01T23:59:59.000Z

    The mutual coherence of two coupled semiconductor lasers is investigated experimentally. It is demonstrated that by varying the gain in the overlap region, the degree of phase coherence can be continuously controlled. The quantitative characterization of the degree of phase coherence by fringe visibility is demonstrated.

  8. Phase-locked arrays of unstable resonator semiconductor lasers

    SciTech Connect (OSTI)

    Salzman, J.; Yariv, A.

    1986-08-25T23:59:59.000Z

    A phase-locked array of several unstable resonator semiconductor lasers is demonstrated. Single lateral mode was obtained for currents I-italic<2.5I-italic/sub th/, and partial spatial coherence for I-italic< or =5I-italic/sub th/, with an optical output power of 0.95 W.

  9. Supermode control in diffraction-coupled semiconductor laser arrays

    SciTech Connect (OSTI)

    Mehuys, D.; Mitsunaga, K.; Eng, L.; Marshall, W.K.; Yariv, A.

    1988-09-26T23:59:59.000Z

    Supermode control is demonstrated theoretically and experimentally in diffraction-coupled semiconductor laser arrays. A linear theory is presented to determine the supermode threshold gain as a function of the coupling cavity length. By fabricating devices with different coupling cavity lengths, array operation in both the fundamental and highest order supermodes is achieved.

  10. (Electron transfer rates at semiconductor/liquid interfaces)

    SciTech Connect (OSTI)

    Lewis, N.S.

    1992-01-01T23:59:59.000Z

    Work has focused on several aspects of the fundamental chemistry and physics semiconductor/liquid junction behavior. These projects have been directed primarily towards GaAs/liquid contacts, because GaAs/liquid systems provide high energy conversion efficiencies and offer an opportunity to gain mechanistic understanding of the factors that are important to control in an efficient photoelectrochemical energy conversion system.

  11. [Electron transfer rates at semiconductor/liquid interfaces]. Progress report

    SciTech Connect (OSTI)

    Lewis, N.S.

    1992-08-01T23:59:59.000Z

    Work has focused on several aspects of the fundamental chemistry and physics semiconductor/liquid junction behavior. These projects have been directed primarily towards GaAs/liquid contacts, because GaAs/liquid systems provide high energy conversion efficiencies and offer an opportunity to gain mechanistic understanding of the factors that are important to control in an efficient photoelectrochemical energy conversion system.

  12. FLUID MECHANICS AND HEAT TRANSFER OF ELECTRON FLOW IN SEMICONDUCTORS

    E-Print Network [OSTI]

    Sen, Mihir

    = heat, f = LO-mode, g = LO, h = LA-mode, i = negligible, j = remote heat sink 7/ 70 #12;Heat conductionFLUID MECHANICS AND HEAT TRANSFER OF ELECTRON FLOW IN SEMICONDUCTORS Mihir Sen Department · Shallow water analogy · Vorticity dynamics · Linear stability analysis · Numerical simulations of heat

  13. Theory and Design of Smith-Purcell Semiconductor Terahertz Sources

    E-Print Network [OSTI]

    Smith, Don DeeWayne

    2013-12-06T23:59:59.000Z

    difficulties reaching the THz, and no THz device of any type operates on the full range at room temperature. This dissertation proposes a novel semiconductor source which utilizes the transferred-electron (Gunn) effect and the Smith-Purcell effect to operate...

  14. High Gain, High Efficiency Vertical-Cavity Semiconductor Optical Amplifiers

    E-Print Network [OSTI]

    Bowers, John

    -cavity semiconductor optical amplifiers (VCSOAs) are interesting devices for applications such as wavelength selective coupling efficiency to optical fiber (yielding a low noise figure), small form factor, and the potential of fabricating high-density 2D arrays on wafer. Furthermore, the vertical-cavity design is compatible with low

  15. Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles

    E-Print Network [OSTI]

    Bowers, John

    Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles J. M, mobility, and Seebeck coefficient of these materials and discuss their potential for use in thermoelectric on thermoelectric materials has focused on the ability of heterostructures and quantum con- finement to increase

  16. Dielectric function of diluted magnetic semiconductors in the infrared regime

    E-Print Network [OSTI]

    Aguado, R.; Lopez-Sancho, MP; Sinova, Jairo; Brey, L.

    2004-01-01T23:59:59.000Z

    We present a study of the dielectric function of metallic (III,Mn)V diluted magnetic semiconductors in the infrared regime. Our theoretical approach is based on the kinetic exchange model for carrier induced (III,Mn)V ferromagnetism. The dielectric...

  17. Timing jitter in passively mode-locked semiconductor lasers

    E-Print Network [OSTI]

    Pimenov, A; Rachinskii, D; Hegarty, S P; Huyet, G; Vladimirov, A G

    2014-01-01T23:59:59.000Z

    We study the effect of noise on the dynamics of passively mode-locked semiconductor lasers both experimentally and theoretically. A method combining analytical and numerical approaches for estimation of pulse timing jitter is proposed. We investigate how the presence of dynamical features such as wavelength bistability affects timing jitter.

  18. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    SciTech Connect (OSTI)

    Weiss, Shimon; Schlamp, Michael C; Alivisatos, A. Paul

    2014-02-11T23:59:59.000Z

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  19. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    SciTech Connect (OSTI)

    Weiss, Shimon; Schlam, Michael C; Alivisatos, A. Paul

    2014-03-25T23:59:59.000Z

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  20. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOE Patents [OSTI]

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2005-03-08T23:59:59.000Z

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  1. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOE Patents [OSTI]

    Weiss, Shimon (Pinole, CA); Schlamp, Michael C. (Plainsboro, NJ); Alivisatos, A. Paul (Oakland, CA)

    2011-09-27T23:59:59.000Z

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  2. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOE Patents [OSTI]

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2010-04-13T23:59:59.000Z

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  3. Coherent Control of Colloidal Semiconductor Nanocrystals R. Wilcken,

    E-Print Network [OSTI]

    Kassel, Universität

    Hannover e.V., Semiconductor and Photovoltaics-Group, Hollerithallee 8, D-30419 Hannover, Germany ABSTRACT on different quantum systems. In the pertubative regime, interferences of multiple excitation pathways enable variations in transition energies because of the NCs size distribution into account are required

  4. Medical Imaging with Semiconductor Detectors Dipartimento di Scienze e Tecnologie Avanzate, Universit del Piemonte Orientale and INFN,

    E-Print Network [OSTI]

    Ramello, Luciano

    . Angiographic and mammographic dual energy techniques will be discussed in some detail. 1. SEMICONDUCTOR

  5. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOE Patents [OSTI]

    Weiss, Shimon (Pinole, CA); Bruchez, Jr., Marcel (Albany, CA); Alivisatos, Paul (Oakland, CA)

    2002-01-01T23:59:59.000Z

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in he probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  6. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOE Patents [OSTI]

    Weiss, Shimon (Pinole, CA); Bruchez, Jr., Marcel (Albany, CA); Alivisatos, Paul (Oakland, CA)

    2004-03-02T23:59:59.000Z

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  7. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOE Patents [OSTI]

    Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

    2012-10-16T23:59:59.000Z

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  8. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOE Patents [OSTI]

    Weiss, Shimon (Pinole, CA); Bruchez, Marcel (Newark, CA); Alivisatos, Paul (Oakland, CA)

    2011-12-06T23:59:59.000Z

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  9. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOE Patents [OSTI]

    Weiss, Shimon (Pinole, CA); Bruchez, Marcel (Newark, CA); Alivisatos, Paul (Oakland, CA)

    2011-12-20T23:59:59.000Z

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  10. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOE Patents [OSTI]

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2005-08-09T23:59:59.000Z

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  11. Methods of use of semiconductor nanocrystal probes for treating a material

    DOE Patents [OSTI]

    Weiss, Shimon (Los Angeles, CA); Bruchez, Marcel (Belmont, CA); Alivisatos, Paul (Oakland, CA)

    2007-04-27T23:59:59.000Z

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  12. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOE Patents [OSTI]

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2006-09-05T23:59:59.000Z

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  13. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOE Patents [OSTI]

    Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

    2014-01-28T23:59:59.000Z

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  14. A Multiphase Model for Cold Start of Polymer Electrolyte Fuel Leng Mao, Chao-Yang Wang,*,z

    E-Print Network [OSTI]

    A Multiphase Model for Cold Start of Polymer Electrolyte Fuel Cells Leng Mao, Chao-Yang Wang, The Pennsylvania State University, University Park, Pennsylvania 16802, USA A multiphase and transient model

  15. Pp and p-barp elastic scattering at 53 GeV and the Chou-Yang model

    SciTech Connect (OSTI)

    Bellandi F., J.; Brunetto, S.Q.; Covolan, R.J.M.; Menon, M.J.; Pimentel, B.M.; Padua, A.B.

    1987-03-01T23:59:59.000Z

    We analyze the pp and p-barp elastic scattering at ..sqrt..s = 53 GeV by means of the Chou-Yang model under the assumption that the hadronic form factors are energy-dependent.

  16. Instanton-soliton loops in 5D super-Yang-Mills

    E-Print Network [OSTI]

    Constantinos Papageorgakis; Andrew B. Royston

    2014-09-17T23:59:59.000Z

    Soliton contributions to perturbative processes in QFT are controlled by a form factor, which depends on the soliton size. We provide a demonstration of this fact in a class of scalar theories with generic moduli spaces. We then argue that for instanton-solitons in 5D super-Yang-Mills theory the analogous form factor does not lead to faster-than-any-power suppression in the perturbative coupling. We also discuss the implications of such contributions for the UV behavior of maximally supersymmetric Yang-Mills in 5D and its relation to the (2,0) CFT in 6D. This is a contribution to the proceedings of the "String Math 2013'" conference and is a condensed version of results appearing in 1404.0016 and 1403.5017.

  17. The infrared fixed point of Landau gauge Yang-Mills theory: A renormalization group analysis

    E-Print Network [OSTI]

    Axel Weber

    2012-05-02T23:59:59.000Z

    The infrared behavior of gluon and ghost propagators in Landau gauge Yang-Mills theory has been at the center of an intense debate over the last decade. Different solutions of the Dyson-Schwinger equations show a different behavior of the propagators in the infrared: in the so-called scaling solutions both propagators follow a power law, while in the decoupling solutions the gluon propagator shows a massive behavior. The latest lattice results favor the decoupling solutions. In this contribution, after giving a brief overview of the present status of analytical and semi-analytical approaches to the infrared regime of Landau gauge Yang-Mills theory, we will show how Callan-Symanzik renormalization group equations in an epsilon expansion reproduce both types of solutions and single out the decoupling solutions as the infrared-stable ones for space-time dimensions greater than two, in agreement with the lattice calculations.

  18. Infrared Behavior of 3-Point Functions in Landau Gauge Yang-Mills Theory

    E-Print Network [OSTI]

    Markus Q. Huber; Reinhard Alkofer; Kai Schwenzer

    2008-12-23T23:59:59.000Z

    The three-gluon and ghost-gluon vertices of Landau gauge Yang-Mills theory are investigated in the low momentum regime. Due to ghost dominance in the infrared we can use the known power law behavior for the propagators to determine analytically the complete momentum dependence of the dressing functions. Besides a uniform, i. e. all momenta going to zero, divergence, we find additional singularities, if one momentum alone goes to zero, while the other two remain constant. At these asymmetric points we can extract additional infrared exponents, which corroborate previous results and expand the known fixed point solution of Landau gauge Yang-Mills theory, where the uniform infrared exponents for all vertex functions are known. Calculations in two and three dimensions yield qualitatively similar results.

  19. Infrared Behaviour of Landau Gauge Yang-Mills Theory with a Fundamentally Charged Scalar Field

    E-Print Network [OSTI]

    Leonard Fister

    2010-02-08T23:59:59.000Z

    The infrared behaviour of the n-point functions of a Yang-Mills theory with a charged scalar field in the fundamental representation of SU(N) is studied in the formalism of Dyson-Schwinger equations. Assuming a stable skeleton expansion solutions in form of power laws for the Green functions are obtained. For a massless scalar field the uniform limit is sufficient to describe the infrared scaling behaviour of vertices. Not taking into account a possible Higgs-phase it turns out that kinematic singularities play an important role for the scaling solutions of massive scalars. On a qualitative level scalar Yang-Mills theory yields similar scaling solutions as recently obtained for QCD.

  20. N = 4 Super-Yang-Mills on Conic Space as Hologram of STU Topological Black Hole

    E-Print Network [OSTI]

    Xing Huang; Yang Zhou

    2014-09-05T23:59:59.000Z

    We construct four-dimensional N=4 super-Yang-Mills theories on a conic sphere with various background R-symmetry gauge fields. We study free energy and supersymmetric Renyi entropy using heat kernel method as well as localization technique. We find that the universal contribution to the partition function in the free field limit is the same as that in the strong coupling limit, which implies that it may be protected by supersymmetry. Based on the fact that, the conic sphere can be conformally mapped to $S^1\\times H^3$ and the R-symmetry background fields can be supported by the R-charges of black hole, we propose that the holographic dual of these theories are five-dimensional, supersymmetric STU topological black holes. We demonstrate perfect agreement between N=4 super-Yang-Mills theories in the planar limit and the STU topological black holes.

  1. Scaling and Density of Lee-Yang Zeroes in the Four Dimensional Ising Model

    E-Print Network [OSTI]

    R. Kenna; C. B. Lang

    1993-11-20T23:59:59.000Z

    The scaling behaviour of the edge of the Lee--Yang zeroes in the four dimensional Ising model is analyzed. This model is believed to belong to the same universality class as the $\\phi^4_4$ model which plays a central role in relativistic quantum field theory. While in the thermodynamic limit the scaling of the Yang--Lee edge is not modified by multiplicative logarithmic corrections, such corrections are manifest in the corresponding finite--size formulae. The asymptotic form for the density of zeroes which recovers the scaling behaviour of the susceptibility and the specific heat in the thermodynamic limit is found to exhibit logarithmic corrections too. The density of zeroes for a finite--size system is examined both analytically and numerically.

  2. Study of Yang–Mills–Chern–Simons theory in presence of the Gribov horizon

    SciTech Connect (OSTI)

    Canfora, Fabrizio, E-mail: canfora@cecs.cl [Centro de Estudios Cientificos (CECs), Valdivia (Chile); Universidad Andres Bello, Av. Republica 440, Santiago (Chile); Gomez, Arturo, E-mail: arturo.gomez@proyectos.uai.cl [Departamento de Ciencias, Facultad de Artes Liberales y Facultad de Ingeniería y Ciencias, Universidad Adolfo Ibáñez, Viña del Mar. (Chile); Sorella, Silvio Paolo, E-mail: sorella@uerj.br [UERJ, Universidade do Estado do Rio de Janeiro (UERJ), Instituto de Física Teórica, Rua São Francisco Xavier 524, 20550-013, Maracaná, Rio de Janeiro (Brazil); Vercauteren, David, E-mail: vercauteren.uerj@gmail.com [UERJ, Universidade do Estado do Rio de Janeiro (UERJ), Instituto de Física Teórica, Rua São Francisco Xavier 524, 20550-013, Maracaná, Rio de Janeiro (Brazil)

    2014-06-15T23:59:59.000Z

    The two-point gauge correlation function in Yang–Mills–Chern–Simons theory in three dimensional Euclidean space is analysed by taking into account the non-perturbative effects of the Gribov horizon. In this way, we are able to describe the confinement and de-confinement regimes, which naturally depend on the topological mass and on the gauge coupling constant of the theory. -- Highlights: •We implement the Gribov quantization to the Topologically massive Yang–Mills theory. •We find a modified propagator at strong coupling by the Gribov horizon. •The gauge propagator depends on the topological mass and the coupling constant. •By studying the gauge propagator we describe the confined–deconfined regimes.

  3. Magnetic monopole and confinement/deconfinement phase transition in SU(3) Yang-Mills theory

    E-Print Network [OSTI]

    Akihiro Shibata; Kei-Ichi Kondo; Seikou Kato; Toru Shinohara

    2015-01-26T23:59:59.000Z

    We have proposed the non-Abelian dual superconductivity in SU(3) Yang-Mills theory for the mechanism of quark confinement,and we presented the numerical evidences in preceding lattice conferences by using the proposed gauge link decomposition to extract magnetic monopole in the gauge invariant way. In this talk, we focus on the dual Meissner effects in view of the magnetic monopole in SU(3) Yang-Mills theory. We measure the chromoelectric and chromomagnetic flux due to a pair of quark and antiquark source at finite temperature. Then, we measure the correlation function of Polyakov loops and Polyakov loop average at various temperatures, and investigate chromomagnetic monopole current induced by chromo-magnetic flux in both confinement and deconfinement phase. We will discuss the role of the chromoelectric monopole in confinement/deconfinement phase transition.

  4. Noncommutative vortices and flux tubes from Yang-Mills theories with spontaneously generated fuzzy extra dimensions

    SciTech Connect (OSTI)

    Kuerkcueoglu, Seckin [Middle East Technical University, Department of Physics, Inoenue Boulevard, 06531, Ankara (Turkey)

    2010-11-15T23:59:59.000Z

    We consider a U(2) Yang-Mills theory on MxS{sub F}{sup 2}, where M is an arbitrary noncommutative manifold, and S{sub F}{sup 2} is a fuzzy sphere spontaneously generated from a noncommutative U(N) Yang-Mills theory on M, coupled to a triplet of scalars in the adjoint of U(N). Employing the SU(2)-equivariant gauge field constructed in [D. Harland and S. Kurkcuoglu, Nucl. Phys. B 821, 380 (2009).], we perform the dimensional reduction of the theory over the fuzzy sphere. The emergent model is a noncommutative U(1) gauge theory coupled adjointly to a set of scalar fields. We study this model on the Groenewald-Moyal plane M=R{sub {theta}}{sup 2} and find that, in certain limits, it admits noncommutative, non-Bogomol'nyi-Prasad-Somerfield vortex as well as flux-tube (fluxon) solutions and discuss some of their properties.

  5. Effective Polyakov-loop theory for pure Yang-Mills from strong coupling expansion

    E-Print Network [OSTI]

    Jens Langelage; Stefano Lottini; Owe Philipsen

    2010-10-30T23:59:59.000Z

    Lattice Yang-Mills theories at finite temperature can be mapped onto effective 3d spin systems, thus facilitating their numerical investigation. Using strong-coupling expansions we derive effective actions for Polyakov loops in the $SU(2)$ and $SU(3)$ cases and investigate the effect of higher order corrections. Once a formulation is obtained which allows for Monte Carlo analysis, the nature of the phase transition in both classes of models is investigated numerically, and the results are then used to predict -- with an accuracy within a few percent -- the deconfinement point in the original 4d Yang-Mills pure gauge theories, for a series of values of $N_\\tau$ at once.

  6. Dual Superconductor Picture for Strongly-coupled SU(2) Yang-Mills Theory

    E-Print Network [OSTI]

    Duoje Jia; Yi-shi Duan

    2006-05-18T23:59:59.000Z

    A new framework that fulfills the dual superconductor picture is proposed for the strongly-coupled Yang-Mills theory. This framework is based on the idea that at the classic level the strong-coupling limit of the theory vacuum behaves as a back hole with regard to colors in the sense of the effective field theory, and the theory variables undergo an ultraviolet/infrared scale separation. We show that at the quantum level the strong-coupled theory vacuum is made up of a Bose-condensed many-body system of magnetic charges. We further check this framework by reproducing the dual Abelian-Higgs model from the Yang-Mills theory and the predicting the vacuum type of the theory which is very near to the border between type-I and type-II superconductors and remarkably consistent with the recent simulations.

  7. Infrared Safe Observables in ${\\cal N}=4$ Super Yang-Mills Theory

    E-Print Network [OSTI]

    L. V. Bork; D. I. Kazakov; G. S. Vartanov; A. V. Zhiboedov

    2009-10-27T23:59:59.000Z

    The infrared structure of MHV gluon amplitudes in ${\\cal N}=4$ super Yang-Mills theory is considered in the next-to-leading order of PT. Explicit cancelation of the infrared divergencies in properly defined cross-sections is demonstrated. The remaining finite parts for some inclusive differential cross-sections are calculated analytically. In general, contrary to the virtual corrections, they do not reveal any simple structure.

  8. Un-Ki Yang, Young-kee Kim University of Chicago

    E-Print Network [OSTI]

    Un-Ki Yang, Young-kee Kim University of Chicago MC workshop, Dec 04, 2003 ISR studies onISR studiesV #12;Comparison of Herwig and Pythia with diff. tuning [parameters] 1.452.502.50 (D=1) parp(91) Kt_sigma (intrinsic parton pt in proton) 1515 (D=5) parp(93) Kt_max (Kt cut-off) 10.21 (=D) parp(64) K facotor

  9. A covariant variational approach to Yang-Mills Theory at finite temperatures

    E-Print Network [OSTI]

    Markus Quandt; Hugo Reinhardt

    2015-03-24T23:59:59.000Z

    We extend the covariant variational approach for SU(N) Yang-Mills theory in Landau gauge to non-zero temperatures. The renormalization of the zero-temperature case is revisited and it is shown that the same counterterms are sufficient to render the low-order Green's function finite at non-zero temperature. We compute the ghost and gluon propagator numerically and show that it agrees in all qualitative respects with the results of high-precision lattice calculations.

  10. Superspace Formulation of N=4 Super Yang-Mills Theory with a Central Charge

    E-Print Network [OSTI]

    Jun Saito

    2005-12-19T23:59:59.000Z

    A superspace formulation using superconnections and supercurvatures is specifically constructed for N=4 extended super Yang-Mills theory with a central charge in four dimensions, first proposed by Sohnius, Stelle and West long ago. We find that the constraints, almost uniquely derived from the possible spin structure of the multiplet, can be algebraically solved which results in an off-shell supersymmetric formulation of the theory on the superspace.

  11. Radiation in Yang-Mills formulation of gravity and a generalized pp-wave metric

    E-Print Network [OSTI]

    S. Baskal

    1997-12-23T23:59:59.000Z

    The variational methods implemented on a quadratic Yang-Mills type Lagrangian yield two sets of equations interpreted as the field equations and the energy-momentum tensor for the gravitational field. A covariant condition is imposed on the energy-momentum tensor to represent the radiation field. A generalized pp-wave metric is found to simultaneously satisfy both the field equations and the radiation condition. The result is compared with that of Lichn\\'{e}rowicz.

  12. Shear viscosity of pure Yang-Mills theory at strong coupling

    E-Print Network [OSTI]

    Antal Jakovac; Daniel Nogradi

    2008-12-05T23:59:59.000Z

    We calculate the shear viscosity to entropy density ratio in pure SU(N) Yang-Mills theory below the critical temperature using the strong coupling expansion. The result for the eta/s ratio for temperatures around the phase transition is 0.22 for N = 2 and 0.028N^2 for N > 2. The results are consistent with the conjectured 1/4pi lower bound inspired by the AdS/CFT correspondence.

  13. Nonlocal Charges for Bonus Yangian Symmetries of Super-Yang-Mills

    E-Print Network [OSTI]

    Berkovits, Nathan

    2011-01-01T23:59:59.000Z

    The existence of a "bonus" U(1) level-one Yangian symmetry of N=4 super-Yang-Mills has recently been proposed. We provide evidence for this proposal by constructing the BRST-invariant nonlocal charge in the pure spinor sigma model corresponding to this bonus level-one symmetry. We also construct analogous charges for bonus U(1) symmetries at all odd levels of the Yangian.

  14. Nonlocal Charges for Bonus Yangian Symmetries of Super-Yang-Mills

    E-Print Network [OSTI]

    Nathan Berkovits; Andrei Mikhailov

    2011-06-13T23:59:59.000Z

    The existence of a "bonus" U(1) level-one Yangian symmetry of N=4 super-Yang-Mills has recently been proposed. We provide evidence for this proposal by constructing the BRST-invariant nonlocal charge in the pure spinor sigma model corresponding to this bonus level-one symmetry. We also construct analogous charges for bonus U(1) symmetries at all odd levels of the Yangian.

  15. Scattering Equations and Matrices: From Einstein To Yang-Mills, DBI and NLSM

    E-Print Network [OSTI]

    Freddy Cachazo; Song He; Ellis Ye Yuan

    2015-01-25T23:59:59.000Z

    The tree-level S-matrix of Einstein's theory is known to have a representation as an integral over the moduli space of punctured spheres localized to the solutions of the scattering equations. In this paper we introduce three operations that can be applied on the integrand in order to produce other theories. Starting in $d+M$ dimensions we use dimensional reduction to construct Einstein-Maxwell with gauge group $U(1)^M$. The second operation turns gravitons into gluons and we call it "squeezing". This gives rise to a formula for all multi-trace mixed amplitudes in Einstein-Yang-Mills. Dimensionally reducing Yang-Mills we find the S-matrix of a special Yang-Mills-Scalar (YMS) theory, and by the squeezing operation we find that of a YMS theory with an additional cubic scalar vertex. A corollary of the YMS formula gives one for a single massless scalar with a $\\phi^4$ interaction. Starting again from Einstein's theory but in $d+d$ dimensions we introduce a "generalized dimensional reduction" that produces the Born-Infeld theory or a special Galileon theory in $d$ dimensions depending on how it is applied. An extension of Born-Infeld formula leads to one for the Dirac-Born-Infeld (DBI) theory. By applying the same operation to Yang-Mills we obtain the $U(N)$ non-linear sigma model (NLSM). Finally, we show how the Kawai-Lewellen-Tye relations naturally follow from our formulation and provide additional connections among these theories. One such relation constructs DBI from YMS and NLSM.

  16. An instability of hyperbolic space under the Yang-Mills flow

    SciTech Connect (OSTI)

    Gegenberg, Jack; Day, Andrew C.; Liu, Haitao; Seahra, Sanjeev S. [Department of Mathematics and Statistics, University of New Brunswick Fredericton, New Brunswick, E3B 5A3 (Canada)] [Department of Mathematics and Statistics, University of New Brunswick Fredericton, New Brunswick, E3B 5A3 (Canada)

    2014-04-15T23:59:59.000Z

    We consider the Yang-Mills flow on hyperbolic 3-space. The gauge connection is constructed from the frame-field and (not necessarily compatible) spin connection components. The fixed points of this flow include zero Yang-Mills curvature configurations, for which the spin connection has zero torsion and the associated Riemannian geometry is one of constant curvature. We analytically solve the linearized flow equations for a large class of perturbations to the fixed point corresponding to hyperbolic 3-space. These can be expressed as a linear superposition of distinct modes, some of which are exponentially growing along the flow. The growing modes imply the divergence of the (gauge invariant) perturbative torsion for a wide class of initial data, indicating an instability of the background geometry that we confirm with numeric simulations in the partially compactified case. There are stable modes with zero torsion, but all the unstable modes are torsion-full. This leads us to speculate that the instability is induced by the torsion degrees of freedom present in the Yang-Mills flow.

  17. String theories as the adiabatic limit of Yang-Mills theory

    E-Print Network [OSTI]

    Popov, Alexander D

    2015-01-01T23:59:59.000Z

    We consider Yang-Mills theory with a matrix gauge group $G$ on a direct product manifold $M=\\Sigma_2\\times H^2$, where $\\Sigma_2$ is a two-dimensional Lorentzian manifold and $H^2$ is a two-dimensional open disc with the boundary $S^1=\\partial H^2$. The Euler-Lagrange equations for the metric on $\\Sigma_2$ yield constraint equations for the Yang-Mills energy-momentum tensor. We show that in the adiabatic limit, when the metric on $H^2$ is scaled down, the Yang-Mills equations plus constraints on the energy-momentum tensor become the equations describing strings with a worldsheet $\\Sigma_2$ moving in the based loop group $\\Omega G=C^\\infty (S^1, G)/G$, where $S^1$ is the boundary $S^1=\\partial H^2$ of $H^2$. By choosing $G= R^{d-1, 1}$ and putting to zero all parameters in $\\Omega R^{d-1, 1}$ besides $R^{d-1, 1}$, we get a string moving in $R^{d-1, 1}$. If one takes $\\Sigma_2= R\\times [0,1]$ or $R\\times S^1$, one obtains equations for open or closed strings. Similarly one can get equations of string moving in ...

  18. Method for mapping charge pulses in semiconductor radiation detectors

    SciTech Connect (OSTI)

    Prettyman, T.H.

    1998-12-01T23:59:59.000Z

    An efficient method for determining the distribution of charge pulses produced by semiconductor detectors is presented. The method is based on a quasi-steady-state model for semiconductor detector operation. A complete description of the model and underlying assumptions is given. Mapping of charge pulses is accomplished by solving an adjoint carrier continuity equation. The solution of the adjoint equation yields Green`s function, a time- and position-dependent map that contains all possible charge pulses that can be produced by the detector for charge generated at discrete locations (e.g., by gamma-ray interactions). Because the map is generated by solving a single, time-dependent problem, the potential for reduction in computational effort over direct mapping methods is significant, particularly for detectors with complex electrode structures. In this paper, the adjoint equation is derived and the mapping method is illustrated for a simple case.

  19. Method of plasma etching GA-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2013-01-01T23:59:59.000Z

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

  20. Method of plasma etching Ga-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25T23:59:59.000Z

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.