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1

Ados Co Ltd Dong Yang Semiconductor | Open Energy Information  

Open Energy Info (EERE)

Ados Co Ltd Dong Yang Semiconductor Ados Co Ltd Dong Yang Semiconductor Jump to: navigation, search Name Ados Co Ltd (Dong Yang Semiconductor) Place Seoul, Seoul, Korea (Republic) Product Korean manufacturer of semiconductors; through Ersol's technology, will develop PV plants and begin to roll out crystalline silicon wafers and cells by H2 2007. Coordinates 37.557121°, 126.977379° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.557121,"lon":126.977379,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

2

dong-99.PDF  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

25-Month Data Base of Stratus Cloud Properties 25-Month Data Base of Stratus Cloud Properties Generated from Ground-Based Measurements at the ARM SGP Site X. Dong Analytical Services and Materials, Inc. Hampton, Virginia P. Minnis Atmospheric Sciences Division National Aeronautics and Space Administration Langley Research Center Hampton, Virginia T. P. Ackerman, E. E. Clothiaux, and C. N. Long Department of Meteorology Pennsylvania State University University Park, Pennsylvania G. G. Mace Meteorology Department University of Utah Salt Lake City, Utah J. C. Liljegren Ames Laboratory Ames, Iowa Introduction Boundary layer stratiform clouds are important in the regulation of the earth's radiation budget and play an important role in climate over both land and ocean (Ramanathan et al. 1989). Boundary layer stratus

3

dong(3)-98.pdf  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

from Surface and GOES Measurements over the ARM SGP Central Facility X. Dong and W. L. Smith, Jr. Analytical Services and Materials, Inc. Hampton, Virginia P. Minnis NASA-Langley...

4

Spontaneous emission factor for semiconductor superluminescent diodes Yongsheng Zhao, Weihua Han, Junfeng Song, Xuemei Li, Yang Liu, Dingsan Gao,  

E-Print Network [OSTI]

Spontaneous emission factor for semiconductor superluminescent diodes Yongsheng Zhao, Weihua Han emission factor is an important parameter for the characterization of semiconductor light emitting devices difference involved in each device. In this article, the spontaneous emission factor for superluminescent

Cao, Hui

5

dong(2)-98.pdf  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

5 5 Validation of Cloud Microphysical Retrievals from Surface- and Satellite-Based Measurements Obtained During the Fall of 96 Penn State Aircraft Experiment X. Dong Analytical Services and Materials, Inc., Hampton, Virginia E. E. Clothiaux, N. Miles, J. Verlinde, and T. P. Ackerman The Pennsylvania State University University Park, Pennsylvania P. Minnis NASA-Langley Research Center Hampton, Virginia B. A. Albrecht University of Miami Miami, Florida Introduction Comparisons with aircraft in situ measurements are critically needed to quantify the uncertainties in Atmospheric Radiation Measurement (ARM) surface-and satellite-band retrievals of cloud properties. During the fall of 1996, measurements were made from a ground-based remote sensing site in central Pennsylvania in conjunction

6

Wuhan Dongli Properties Co Ltd | Open Energy Information  

Open Energy Info (EERE)

Dongli Properties Co Ltd Dongli Properties Co Ltd Jump to: navigation, search Name Wuhan Dongli Properties Co Ltd Place Wuhan, Hubei Province, China Sector Solar Product Wuhan-based real estate developer that diversified into solar industry. Coordinates 30.572399°, 114.279121° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":30.572399,"lon":114.279121,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

7

Dong Energy London Array Limited Formerly known as CORE Ltd | Open Energy  

Open Energy Info (EERE)

Dong Energy London Array Limited Formerly known as CORE Ltd Dong Energy London Array Limited Formerly known as CORE Ltd Jump to: navigation, search Name Dong Energy London Array Limited (Formerly known as CORE Ltd) Place United Kingdom Sector Wind energy Product Dong Energy London Array Limited is a UK Joint Venture between Farm energy and Energi E2, involved in offshore wind farms in the outer Thames Estuary. References Dong Energy London Array Limited (Formerly known as CORE Ltd)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Dong Energy London Array Limited (Formerly known as CORE Ltd) is a company located in United Kingdom . References ↑ "Dong Energy London Array Limited (Formerly known as CORE Ltd)"

8

A Model Transformation Approach for Design Pattern Evolutions Jing Dong, Sheng Yang, Kang Zhang  

E-Print Network [OSTI]

,syang,kzhang}@utdallas.edu Abstract The evolution of a design pattern typically involves the addition or removal of a group pattern may involve the addition or removal of several parts of a design pattern. Misunderstanding of a design pattern may result in missing parts of the evolution process. The addition and removal of system

Zhang, Kang

9

Spatially Resolved Optoelectronics in Lead Sulfide Nanowires Yiming Yang, Xingyue Peng, and Dong Yu  

E-Print Network [OSTI]

to the development and optimization of optoelectronic devices such as solar cells and photodetectors. Comparing solar energy devices and lasers. Therefore, it is 10.1149/05808.0087ecst ©The Electrochemical Society Synthesis and Device Fabrication PbS NWs were synthesized by a CVD method in a tube furnace. PbCl2 (99

Yu, Dong

10

Joyce Yang | Department of Energy  

Office of Environmental Management (EM)

Joyce Yang About Us Joyce Yang Joyce Yang is Technology Development Manager for the Biomass Program in the Office of Energy Efficiency and Renewable Energy. Most Recent Innovation...

11

Microsoft PowerPoint - DongHuang_ARMposter2008.ppt [Compatibility...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

dimensional Tomography of Cloud Microphysics by Combining Microwave Radar and Radiometer Measurements Dong Huang, Yangang Liu, and Warren Wiscombe Summary Retrieving cloud liquid...

12

Microsoft PowerPoint - DongHuang_ARMposter2007_v4.ppt [Compatibility...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Distribution with 3D Cloud Tomography Dong Huang, Yangang Liu, and Warren Wiscombe Tomography is a technique for imaging an object's interior from its projections The inverse...

13

Semiconductor Nanowires for Energy Conversion Allon I. Hochbaum*,  

E-Print Network [OSTI]

Semiconductor Nanowires for Energy Conversion Allon I. Hochbaum*, and Peidong Yang* Department. Introduction: Role of Materials in Energy Conversion 527 2. Why Are Semiconductor Nanowires Special? 527 3 of Materials in Energy Conversion Between 2004 and 2030 the annual global consumption of energy is estimated

Wu, Zhigang

14

Woo-Sun Yang  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Woo-Sun Yang Woo-Sun Yang Woo-Sun Yang Woo-Sun-Yang.jpg Woo-Sun Yang , Ph.D. HPC Consultant , WYang@lbl.gov Phone: (510) 486-5735 , Fax: (510) 486-4316 1 Cyclotron Road Mail Stop 943-256 Berkeley, CA 94720 Conference Papers Wendy Hwa-Chun Lin, Yun (Helen) He, and Woo-Sun Yang, "Franklin Job Completion Analysis", Cray User Group 2010 Proceedings, Edinburgh, UK, May 2010, Download File: cug2010JobComp.pdf (pdf: 429 KB) The NERSC Cray XT4 machine Franklin has been in production for 3000+ users since October 2007, where about 1800 jobs run each day. There has been an on-going effort to better understand how well these jobs run, whether failed jobs are due to application errors or system issues, and to further reduce system related job failures. In this paper, we talk about the

15

Joyce Yang | Department of Energy  

Energy Savers [EERE]

Joyce Yang - Physical Scientist Dr. Joyce Yang is a Physical Scientist with the Office of Energy Efficiency and Renewable Energy's Biomass Program. Most Recent Disappearing Pens...

16

Microsoft PowerPoint - DongHuang_ARMslides2007.ppt [Compatibility...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Distribution with 3D Cloud Tomography Distribution with 3D Cloud Tomography C n "X " l d ? Dong Huang 1 Yangang Liu 1 Can we X-ray clouds? Yangang Liu 1 Warren Wiscombe 1,2...

17

Xudong (Don) Yang  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Don Yang Don Yang Chang-Jiang Professor Dept. of Building Science Tsinghua University, China xyang@tsinghua.edu.cn This speaker was a visiting speaker who delivered a talk or talks on the date(s) shown at the links below. This speaker is not otherwise associated with Lawrence Berkeley National Laboratory, unless specifically identified as a Berkeley Lab staff member. Xudong (Don) Yang is Chang-Jiang Professor in the Department of Building Science, Tsinghua University, China. He received his Ph.D. in Building Technology from MIT in 1999. He was a tenured associate professor in the U.S.A. before returning to Tsinghua University in 2006. His research aims at energy conservation technologies and environmental protection in built environment system. Dr. Yang is a co-author of the Technical Assessment

18

New Inorganic/Organic Coordination Polymers Generated from Bidentate Schiff-Base Yu-Bin Dong, Mark D. Smith, and Hans-Conrad zur Loye*  

E-Print Network [OSTI]

-Bin Dong, Mark D. Smith, and Hans-Conrad zur Loye* Department of Chemistry and Biochemistry, University

zur Loye, Hans-Conrad

19

The Cricket Location-Support Zhe Dong, Rufeng Meng, Zhexing Sun, Rajiv Mishra  

E-Print Network [OSTI]

The Cricket Location-Support System Zhe Dong, Rufeng Meng, Zhexing Sun, Rajiv Mishra 11/02/2009 #12 Ultrasound Travels in a slower speed comparing with RF (1.13 ft/ms at room temperature) #12;111111 How does Solution: Using randomization (Uniform Distribution) to avoid such collisions Using RF signal with longer

Karp, Brad

20

NONNEGATIVE RANK FACTORIZATION VIA RANK REDUCTION BO DONG, MATTHEW M. LIN, AND MOODY T. CHU  

E-Print Network [OSTI]

NONNEGATIVE RANK FACTORIZATION VIA RANK REDUCTION BO DONG, MATTHEW M. LIN, AND MOODY T. CHU possible is called the nonnegative rank of A. Computing the exact nonnegative rank and the corresponding factorization are known to be NP-hard. Even if the nonnegative rank is known a priori, no simple numerical

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Systematic analysis of group identification in stock markets Dong-Hee Kim* and Hawoong Jeong  

E-Print Network [OSTI]

Systematic analysis of group identification in stock markets Dong-Hee Kim* and Hawoong Jeong that the statistics of the bulk eigenvalues are in remarkable agreements with the universal properties of the random correlation matrix. For example, the bulk part of the eigenvalue spectrum of the empirical correlation matrix

Jeong, Hawoong

22

Cloud tomography: Role of constraints and a new algorithm Dong Huang,1  

E-Print Network [OSTI]

Cloud tomography: Role of constraints and a new algorithm Dong Huang,1 Yangang Liu,1 and Warren 2008. [1] Retrieving spatial distributions of cloud liquid water content from limited-angle emission data (passive microwave cloud tomography) is ill-posed, and a small inaccuracy in the data and

23

ADVERTISEMENT SEMICONDUCTORS  

E-Print Network [OSTI]

ADVERTISEMENT SEMICONDUCTORS: 07.14.2010 Nano-enabled Coating Makes Aircraft Invisible Humble paint... The oil-separating centrifuges will work, but they... MORE FROM IEEE SPECTRUM ROBOTICS: 06.16.2010 Robo.01.2006 Look Out, Beckham: Here Come the Robots At the "World Cup" for robots, the talk is that one day

Stryk, Oskar von

24

Microsoft Word - Yang_seminar_012011.docx  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

4:00 pm Iran Thomas Auditorium, 8600 High performance organic and inorganic thin film solar cell via solution process Yang Yang Department of Materials Science and Engineering...

25

Piezo-phototronics effect on nano/microwire solar cells Yan Zhang, Ya Yang and Zhong Lin Wang*  

E-Print Network [OSTI]

Piezo-phototronics effect on nano/microwire solar cells Yan Zhang, Ya Yang and Zhong Lin Wang devices, especially flexible and printed organic/inorganic solar cells fabricated using piezoelectric semiconductor nano/microwires. In this paper, the current­voltage characteristics of a solar cell have been

Wang, Zhong L.

26

Electrostatic screening by semiconductors  

E-Print Network [OSTI]

Electrostatic screening by semiconductors is studied, hics. applying the Thomas-Fermi theory. The semiconductor is treated as a medium with dielectric constant e due to vocalizable atoms, with force charge due to electrons. Two models...

Krcmar, Maja

2012-06-07T23:59:59.000Z

27

Solutions to Yang-Mills equations  

E-Print Network [OSTI]

This article gives explicit solutions to the Yang-Mills equations. The solutions have positive energy that can be made arbitrarily small by selection of a parameter showing that Yang-Mills field theories do not have a mass gap.

Jorma Jormakka

2010-11-15T23:59:59.000Z

28

Thermodynamics of the Yang-Mills gas  

Science Journals Connector (OSTI)

The contribution of nonlinear fluctuations (instantons) to the thermodynamics of the Yang-Mills gas at high temperature is estimated.

Barry J. Harrington and Harvey K. Shepard

1978-10-15T23:59:59.000Z

29

Tag-based Web Photo Retrieval Improved by Batch Mode Re-Tagging Lin Chen Dong Xu Ivor W. Tsang  

E-Print Network [OSTI]

Tag-based Web Photo Retrieval Improved by Batch Mode Re-Tagging Lin Chen Dong Xu Ivor W. Tsang Web photos in social media sharing websites such as Flickr are generally accompanied by rich but noisy textual descriptions (tags, captions, categories, etc.). In this pa- per, we proposed a tag-based photo

Tsang Wai Hung "Ivor"

30

A Dynamical Systems Approach to Energy Disaggregation Roy Dong, Lillian Ratliff, Henrik Ohlsson, and S. Shankar Sastry  

E-Print Network [OSTI]

A Dynamical Systems Approach to Energy Disaggregation Roy Dong, Lillian Ratliff, Henrik Ohlsson energy consumption behavior. However, placing individual sensors on every device in a home account for 20- 40% of total energy consumption [1]. We seek to provide customers with individual device

Sastry, S. Shankar

31

Spire Semiconductor formerly Bandwidth Semiconductor LLC | Open Energy  

Open Energy Info (EERE)

Semiconductor formerly Bandwidth Semiconductor LLC Semiconductor formerly Bandwidth Semiconductor LLC Jump to: navigation, search Name Spire Semiconductor (formerly Bandwidth Semiconductor LLC) Place Hudson, New Hampshire Zip 3051 Product Spire-owned US-based manufacturer of gallium-arsenide (GaAs) cells; offers design and manufacturing capabilities of concentrator cells. References Spire Semiconductor (formerly Bandwidth Semiconductor LLC)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Spire Semiconductor (formerly Bandwidth Semiconductor LLC) is a company located in Hudson, New Hampshire . References ↑ "Spire Semiconductor (formerly Bandwidth Semiconductor LLC)" Retrieved from "http://en.openei.org/w/index.php?title=Spire_Semiconductor_formerly_Bandwidth_Semiconductor_LLC&oldid=351621"

32

Life-cycle Assessment of Semiconductors  

E-Print Network [OSTI]

The international technology roadmap for semiconductors,The international technology roadmap for semiconductors:The international technology roadmap for semiconductors,

Boyd, Sarah B.

2009-01-01T23:59:59.000Z

33

Microsoft PowerPoint - DongHuang_ARMposter2009.ppt [Compatibility Mode]  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

cloud water distribution from an air-borne scanning microwave radiometer: cloud water distribution from an air-borne scanning microwave radiometer: Wakasa Bay field experiment results Dong Huang, Albin Gasiewski, and Warren Wiscombe 1. A mobile cloud tomography setup has some advantages over a fixed one. The tomographic method involves scanning clouds from a multiplicity of directions and locations, and inverting the resulting radiometric measurements to obtain 2D/3D cloud water distributions. A fixed ground-based setup will needed more than four microwave radiometers to secure an acceptable retrieval accuracy. With a mobile platform, a single radiometer can collect tomographic data of the Summary The cloud tomography field trial during the 2003 AMSR-E validation campaign shows that a single scanning microwave radiometer aboard a moving platform can provide useful data for cloud tomography retrieval. Observation system

34

Semiconductor bridge (SCB) detonator  

DOE Patents [OSTI]

The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

Bickes, Jr., Robert W. (Albuquerque, NM); Grubelich, Mark C. (Albuquerque, NM)

1999-01-01T23:59:59.000Z

35

Women @ Energy: Joyce Yang | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Women @ Energy: Joyce Yang Women @ Energy: Joyce Yang Women @ Energy: Joyce Yang March 12, 2013 - 5:05pm Addthis Joyce Yang is a Technology Manager at DOE’s Bioenergy Technologies Office. Joyce Yang is a Technology Manager at DOE's Bioenergy Technologies Office. Joyce Yang is a Technology Manager at DOE's Bioenergy Technologies Office. In this role, she is focused on program planning and project management efforts on biochemical and catalytic conversion technologies to make renewable fuels and chemicals from biomass. Previously, Joyce led the algae to hydrocarbon fuel initiative. Her accomplishments include publishing the DOE National Algal Biofuels Technology Roadmap, serving on the External Advisory Board of the National Alliance for Advanced Biofuels and Bioproducts consortium, and chairing the Interagency Algae Working

36

Women @ Energy: Joyce Yang | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Joyce Yang Joyce Yang Women @ Energy: Joyce Yang March 12, 2013 - 5:05pm Addthis Joyce Yang is a Technology Manager at DOE’s Bioenergy Technologies Office. Joyce Yang is a Technology Manager at DOE's Bioenergy Technologies Office. Joyce Yang is a Technology Manager at DOE's Bioenergy Technologies Office. In this role, she is focused on program planning and project management efforts on biochemical and catalytic conversion technologies to make renewable fuels and chemicals from biomass. Previously, Joyce led the algae to hydrocarbon fuel initiative. Her accomplishments include publishing the DOE National Algal Biofuels Technology Roadmap, serving on the External Advisory Board of the National Alliance for Advanced Biofuels and Bioproducts consortium, and chairing the Interagency Algae Working

37

Xu Huang, Hui Yang, Wentao Liang,...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Lithiation induced corrosive fracture in defective carbon nanotubes Xu Huang, Hui Yang, Wentao Liang, Muralikrishna Raju, Mauricio Terrones et al. Citation: Appl. Phys. Lett. 103,...

38

Invited paper History of Semiconductors  

E-Print Network [OSTI]

AbstractThe history of semiconductors is presented beginning with the first documented observation of a semiconductor effect (Faraday), through the development of the first devices (point-contact rectifiers and transistors, early field-effect transistors) and the theory of semiconductors up to the contemporary devices (SOI and multigate devices). Keywordsband theory, laser, Moores law, semiconductor, transistor.

Lidia ?ukasiak; Andrzej Jakubowski

39

Ferromagnetism in Oxide Semiconductors  

SciTech Connect (OSTI)

In order to become a practical technology, semiconductor spintronics requires the discovery and utilization of ferromagnetic semiconductors which exhibit spin polarization in the majority carrier band at and above room temperature. Intrinsic remanent magnetization would allow spin polarized currents to be propagated in such materials without the need for a continuous magnetic field. However, the discovery and understanding of such materials is proving to be a grand challenge in solid-state science. Indeed, one of the 125 critical unanswered scientific questions recently posed in Science magazine asks, Is it possible to create magnetic semiconductors that work at room temperature?

Chambers, Scott A.; Droubay, Timothy C.; Wang, Chong M.; Rosso, Kevin M.; Heald, Steve M.; Schwartz, S. A.; Kittilstved, Kevin R.; Gamelin, Daniel R.

2006-11-01T23:59:59.000Z

40

Mixed Semiconductor Nanocrystal Compositions  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Mixed Semiconductor Nanocrystal Compositions Mixed Semiconductor Nanocrystal Compositions Mixed Semiconductor Nanocrystal Compositions Composition comprising one or more energy donors and one or more energy acceptors. Available for thumbnail of Feynman Center (505) 665-9090 Email Mixed Semiconductor Nanocrystal Compositions Composition comprising one or more energy donors and one or more energy acceptors, wherein energy is transferred from the energy donor to the energy acceptor and wherein: the energy acceptor is a colloidal nanocrystal having a lower band gap energy than the energy donor; the energy donor and the energy acceptor are separated by a distance of 40 nm or less; wherein the average peak absorption energy of the acceptor is at least 20 meV greater than the average peak emission energy of the energy donor; and

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

INFOGRAPHIC: Wide Bandgap Semiconductors  

Office of Energy Efficiency and Renewable Energy (EERE)

Breakthrough material technology called wide bandgap (WBG) semiconductors can help reduce the amount of wasted heat, boost energy efficiency, improve reliability, reduce cost, and decrease system size in existing and future power electronics.

42

Thermal Conductivity of Polycrystalline Semiconductors and Ceramics  

E-Print Network [OSTI]

semiconductors and ceramics with desired thermalthermal conductivity of several polycrystalline semiconductors and ceramics,Thermal Conductivity of Polycrystalline Semiconductors and Ceramics

Wang, Zhaojie

2012-01-01T23:59:59.000Z

43

Yang-Baxter deformations and rack cohomology  

E-Print Network [OSTI]

Every rack $Q$ provides a set-theoretic solution $c_Q$ of the Yang-Baxter equation. This article examines the deformation theory of $c_Q$ within the space of Yang-Baxter operators over a ring $\\A$, a problem initiated by Freyd and Yetter in 1989. As our main result we classify deformations in the modular case, which had previously been left in suspense, and establish that every deformation of $c_Q$ is gauge-equivalent to a quasi-diagonal one. Stated informally, in a quasi-diagonal deformation only behaviourally equivalent elements interact. In the extreme case, where all elements of $Q$ are behaviourally distinct, Yang-Baxter cohomology thus collapses to its diagonal part, which we identify with rack cohomology. The latter has been intensively studied in recent years and, in the modular case, is known to produce non-trivial and topologically interesting Yang-Baxter deformations.

Eisermann, Michael

2008-01-01T23:59:59.000Z

44

Low Voltage High-SNR Pipeline Data Converters Charles Myers, Jipeng Li, Dong-Young Chang, and Un-Ku Moon  

E-Print Network [OSTI]

Low Voltage High-SNR Pipeline Data Converters Charles Myers, Jipeng Li, Dong-Young Chang, and Un pipeline data converter. This is accomplished with the removal of the S/H input stage and the use of a rail limitations. In pipeline data converters, noise reduction options such as oversampling and noise shaping

Moon, Un-Ku

45

Kansas Advanced Semiconductor Project  

SciTech Connect (OSTI)

KASP (Kansas Advanced Semiconductor Project) completed the new Layer 0 upgrade for D0, assumed key electronics projects for the US CMS project, finished important new physics measurements with the D0 experiment at Fermilab, made substantial contributions to detector studies for the proposed e+e- international linear collider (ILC), and advanced key initiatives in non-accelerator-based neutrino physics.

Baringer, P.; Bean, A.; Bolton, T.; Horton-Smith, G.; Maravin, Y.; Ratra, B.; Stanton, N.; von Toerne, E.; Wilson, G.

2007-09-21T23:59:59.000Z

46

Definition: Semiconductor | Open Energy Information  

Open Energy Info (EERE)

Semiconductor Semiconductor Jump to: navigation, search Dictionary.png Semiconductor Any material that has a limited capacity for conducting an electric current. Certain semiconductors, including silicon, gallium arsenide, copper indium diselenide, and cadmium telluride, are uniquely suited to the photovoltaic conversion process.[1] View on Wikipedia Wikipedia Definition A semiconductor is a material which has electrical conductivity to a degree between that of a metal (such as copper) and that of an insulator (such as glass). Semiconductors are the foundation of modern solid state electronics, including transistors, solar cells, light-emitting diodes (LEDs), quantum dots and digital and analog integrated circuits. A semiconductor may have a number of unique properties, one of which is the

47

2012 CERTS R&M Peer Review - Summary: Commercialization of the SuperOPF Framework - Hsiao-Dong Chiang  

Broader source: Energy.gov (indexed) [DOE]

Commercialization of the SuperOPF Framework: Phase 2 Commercialization of the SuperOPF Framework: Phase 2 Project Lead: Hsiao-Dong Chiang Co-investigators: Bin Wang, Patrick Causgrove, Ray Zimmerman 1. Project Objectives: The stochastic contingency-based security constrained AC Optimal Power Flow formulation behind the SuperOPF makes it very applicable to a variety of problems arising in power system planning and operations under deregulation. The ultimate goal of this project is to develop a commercial-grade SuperOPF in the context of co-optimization framework that correctly accounts for contingencies, ancillary services, static and dynamic constraints in determining both dispatch, price and operating reserve. This phase is focused on the following: (i) enhancing SuperOPF (into SuperOPF-VS

48

Semiconductor radiation detector  

DOE Patents [OSTI]

A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.

Patt, Bradley E. (Sherman Oaks, CA); Iwanczyk, Jan S. (Los Angeles, CA); Tull, Carolyn R. (Orinda, CA); Vilkelis, Gintas (Westlake Village, CA)

2002-01-01T23:59:59.000Z

49

Graphene Edge Lithography Guibai Xie, Zhiwen Shi, Rong Yang, Donghua Liu, Wei Yang, Meng Cheng, Duoming Wang, Dongxia Shi,  

E-Print Network [OSTI]

Graphene Edge Lithography Guibai Xie, Zhiwen Shi, Rong Yang, Donghua Liu, Wei Yang, Meng Cheng: Fabrication of graphene nanostructures is of importance for both investigating their intrinsic physical approach for graphene nanostructures. Compared with conventional lithographic fabrication techniques

Zhang, Guangyu

50

Method of passivating semiconductor surfaces  

DOE Patents [OSTI]

A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Wanlass, Mark W. (Golden, CO)

1990-01-01T23:59:59.000Z

51

Quantized Resistance Zhifan He, Huimin Yang  

E-Print Network [OSTI]

, Phys. Rev. Lett. 45, 494 (1980) ·The electrical resistance() at B=0 and B=19.8T ·The Hall resistance() ·Nice plateaus in the Hall resistance ·= h/i2 (h=Planck constant, e=elementary charge and iQuantized Resistance Zhifan He, Huimin Yang Fudan University (China) April 9, Physics 141A #12

Budker, Dmitry

52

Semiconductor devices incorporating multilayer interference regions  

DOE Patents [OSTI]

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

1987-08-31T23:59:59.000Z

53

Avalanche semiconductor radiation detectors  

SciTech Connect (OSTI)

Operation of novel avalanche semiconductor detector, produced on the basis of heterojunctions Si-SiC and Si-Si{sub x}O{sub y} is described. A uniform avalanche process with gain from 10{sup 3} to 10{sup 5} can be reached depending on the conductivity of SiC and Si{sub x}O{sub y} layers. Two types of avalanche photodetectors designed for applications in wavelength range 500--10,00 nm with quantum efficiency 60 {+-} 10% (650 nm) and 200--700 nm with quantum efficiency 60 {+-} 15% (450 nm) are presented.

Sadygov, Z.Y. [Joint Inst. for Nuclear Research, Dubna (Russian Federation)] [Joint Inst. for Nuclear Research, Dubna (Russian Federation); [Azerbaijan Academy of Sciences, Baku (Azerbaijan). Physics Inst.; Zheleznykh, I.M.; Kirillova, T.A. [Russian Academy of Sciences, Moscow (Russian Federation). Inst. for Nuclear Research] [Russian Academy of Sciences, Moscow (Russian Federation). Inst. for Nuclear Research; Malakhov, N.A.; Jejer, V.N. [Joint Inst. for Nuclear Research, Dubna (Russian Federation)] [Joint Inst. for Nuclear Research, Dubna (Russian Federation)

1996-06-01T23:59:59.000Z

54

Method Of Transferring Strained Semiconductor Structures  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Of Transferring Strained Semiconductor Structures Of Transferring Strained Semiconductor Structures Method Of Transferring Strained Semiconductor Structures The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. June 25, 2013 Method Of Transferring Strained Semiconductor Structures The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. Available for thumbnail of Feynman Center (505) 665-9090 Email Method Of Transferring Strained Semiconductor Structures The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having

55

Semiconductor Physics at the Optical Sciences Center  

Science Journals Connector (OSTI)

This talk reviews semiconductor physics experiments and theory at the Optical Sciences Center including optical bistability, femtosecond dynamics, as well as semiconductor laser...

Koch, Stephan W

56

Opportunities for Wide Bandgap Semiconductor Power Electronics...  

Energy Savers [EERE]

Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen...

57

Process for producing chalcogenide semiconductors  

DOE Patents [OSTI]

A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

Noufi, R.; Chen, Y.W.

1985-04-30T23:59:59.000Z

58

Variable temperature semiconductor film deposition  

DOE Patents [OSTI]

A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Li, X.; Sheldon, P.

1998-01-27T23:59:59.000Z

59

Yang Keller and Brown MM 2012.pdf  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Genomics Genomics on Pretreatment Inhibitor Tolerance of Zymomonas mobilis Shihui Yang, Martin Keller, and Steven D. Brown Contents 1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 2 Genome Annotation of ZM4 Using Systems Biology Studies . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 3 Identification of Genes Tolerant to Acetate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 3.1 nhaA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 3.2 hfq . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169 3.3 nhaA and hfq . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170 3.4 himA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170 4 Heterologous

60

Photocatalysis Using Semiconductor Nanoclusters  

SciTech Connect (OSTI)

We report on experiments using nanosize MoS{sub 2} to photo-oxidize organic pollutants in water using visible light as the energy source. We have demonstrated that we can vary the redox potentials and absorbance characteristics of these small semiconductors by adjusting their size, and our studies of the photooxidation of organic molecules have revealed that the rate of oxidation increases with increasing bandgap (i.e. more positive valence band and more negative conduction band potentials). Because these photocatalysis reactions can be performed with the nanoclusters fully dispersed and stable in solution, liquid chromatography can be used to determine both the intermediate reaction products and the state of the nanoclusters during the reaction. We have demonstrated that the MoS{sub 2} nanoclusters remain unchanged during the photooxidation process by this technique. We also report on studies of MoS{sub 2} nanoclusters deposited on TiO{sub 2} powder.

Thurston, T.R.; Wilcoxon,J.P.

1999-01-21T23:59:59.000Z

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Semiconductor radiation detector  

DOE Patents [OSTI]

A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

Bell, Zane W. (Oak Ridge, TN); Burger, Arnold (Knoxville, TN)

2010-03-30T23:59:59.000Z

62

Web Growth of Semiconductors  

Science Journals Connector (OSTI)

A novel process for growth of diamond?lattice semiconductors is described and a model is proposed for the growth mechanism. For germanium the process yields extended thin flat sheets typically 1 cm wide and 0.1 mm thick of good crystalline quality and relatively flat {111} surfaces. The sheet or web freezes from a liquid film drawn up by surface tension between two coplanar dendrites which originate from a single seed and are grown from the melt simultaneously with the sheet. Resistivity throughout the sheet is quite uniform. Etching of germanium webs shows them to be essentially dislocation?free and does not reveal any microsegregation of impurities. Silicon and indium antimonide have also been grown in this manner.

S. O'Hara; A. I. Bennett

1964-01-01T23:59:59.000Z

63

Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material  

DOE Patents [OSTI]

Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

Sopori, Bhushan; Rangappan, Anikara

2014-11-25T23:59:59.000Z

64

Chen Ning Yang, Weak Interactions, and Parity Violation  

Office of Scientific and Technical Information (OSTI)

Dao Lee "for their penetrating investigation of the so-called parity laws which has led to important discoveries regarding the elementary particles". "Yang and Lee made a...

65

Reply to Yang et al.'s comment  

E-Print Network [OSTI]

This is to reply to a recent comment by Yang, Yuan and Zhang on ``Teleportation of two-quNit entanglement: Exploiting local resorces''.

Nguyen Ba An

2006-11-20T23:59:59.000Z

66

Mathematical Modeling of Semiconductor Devices  

E-Print Network [OSTI]

fibers. · Optoelectronic emitters convert an electronic signal into light. Examples are light-emitting diodes (LED) used in displays and indication lambs and semiconductor lasers used in compact disk systems

Jüngel, Ansgar

67

Seebeck coefficient in organic semiconductors  

E-Print Network [OSTI]

Seebeck coefficient in organic semiconductors A dissertation submitted for the degree of Doctor of Philosophy Deepak Venkateshvaran Fitzwilliam College & Optoelectronics Group, Cavendish Laboratory University of Cambridge February 2014 The end...

Venkateshvaran, Deepak

2014-07-01T23:59:59.000Z

68

Subsidiary condition for Yang-Mills theory  

Science Journals Connector (OSTI)

A subsidiary condition for Yang-Mills theory is given. A prescription is proposed for using such a subsidiary condition to eliminate unphysical degrees of freedom from gauge theories in covariant gauges. It is pointed out that elimination of such unphysical modes can generate explicit nonlocal interactions among particles in the physical subspace. The Coulomb interactions among charged particles in QED is one such nonlocal interaction that can be generated in this way. It is argued that confining forces among color-bearing combinations of quarks and transverse gluons in QCD might be another.

Kurt Haller

1983-12-15T23:59:59.000Z

69

Wide-Bandgap Semiconductors  

SciTech Connect (OSTI)

With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters. With the advent of the use of SiC devices it is imperative that models of these be made available in commercial simulators. This enables power electronic designers to simulate their designs for various test conditions prior to fabrication. To build an accurate transistor-level model of a power electronic system such as an inverter, the first step is to characterize the semiconductor devices that are present in the system. Suitable test beds need to be built for each device to precisely test the devices and obtain relevant data that can be used for modeling. This includes careful characterization of the parasitic elements so as to emulate the test setup as closely as possible in simulations. This report is arranged as follows: Chapter 2--The testing and characterization of several diodes and power switches is presented. Chapter 3--A 55-kW hybrid inverter (Si insulated gate bipolar transistor--SiC Schottky diodes) device models and test results are presented. A detailed description of the various test setups followed by the parameter extraction, modeling, and simulation study of the inverter performance is presented. Chapter 4--A 7.5-kW all-SiC inverter (SiC junction field effect transistors (JFET)--SiC Schottky diodes) was built and tested. The models built in Saber were validated using the test data and the models were used in system applications in the Saber simulator. The simulation results and a comparison of the data from the prototype tests are discussed in this chapter. Chapter 5--The duration test results of devices utilized in buck converters undergoing reliability testing are presented.

Chinthavali, M.S.

2005-11-22T23:59:59.000Z

70

Optical Properties and Potential Applications of Doped Semiconductor...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Optical Properties and Potential Applications of Doped Semiconductor Nanoparticles. Optical Properties and Potential Applications of Doped Semiconductor Nanoparticles. Abstract:...

71

Waste minimization in semiconductor processing  

SciTech Connect (OSTI)

The US semiconductor industry uses 5--7 thousand pounds of arsine annually. Fifty to eighty percent of the arsine used becomes a waste product, which requires abatement. Traditional methods of abatement are reviewed with an emphasis on dry chemical scrubbing. A variety of dry chemical scrubbing materials were evaluated for arsine capacity, using activated carbon as the baseline for comparison. Of the available technologies, dry chemical scrubbing is the most effective means of minimizing arsenic containing waste generated from semiconductor effluents. A copper oxide based media has been identified which has high capacity, high efficiency and treats the spectrum of gases used in MOCVD processes. Reclaim and recovery of spent scrubber media has the potential to drastically reduce arsenic waste from semiconductor manufacturing.

Hardwick, S.J.; Mailloux, J.C. [Novapure Corp., Danbury, CT (United States)

1994-12-31T23:59:59.000Z

72

Electromagnetic compatibility in semiconductor manufacturing  

SciTech Connect (OSTI)

Electromagnetic Interference (EMI) causes problems in semiconductor manufacturing facilities that range from nuisances to major disruptions of production. In many instances, these issues are addressed in a reactionary rather than proactive manner by individuals who do not have the experience or the equipment necessary to combat EMI problems in a timely, cost effective manner. This approach leads to expensive retrofits, reduced equipment availability, long recovery times, and in some cases, line yield impacts. The goal of electromagnetic compatibility (EMC) in semiconductor manufacturing is to ensure that semiconductor process, metrology, and support equipment operate as intended without being affected by electromagnetic disturbances either transmitted through air (radiated interference), or transferred into the equipment via a conductive media (conducted interference). Rather than being neglected until serious issues arise, EMC should be considered in the early stages of facility design, in order to gain the most benefit at the lowest cost.

Montoya, J.A. [Intel Corp., Hillsboro, OR (United States)

1995-12-31T23:59:59.000Z

73

Semiconductor nanocrystal-based phagokinetic tracking  

DOE Patents [OSTI]

Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

2014-11-18T23:59:59.000Z

74

Semiconductor electrode with improved photostability characteristics  

DOE Patents [OSTI]

An electrode is described for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode consists of a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

Frank, A.J.

1985-02-19T23:59:59.000Z

75

Semiconductor assisted metal deposition for nanolithography applications  

DOE Patents [OSTI]

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

Rajh, Tijana (Naperville, IL); Meshkov, Natalia (Downers Grove, IL); Nedelijkovic, Jovan M. (Belgrade, YU); Skubal, Laura R. (West Brooklyn, IL); Tiede, David M. (Elmhurst, IL); Thurnauer, Marion (Downers Grove, IL)

2001-01-01T23:59:59.000Z

76

Semiconductor assisted metal deposition for nanolithography applications  

DOE Patents [OSTI]

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

Rajh, Tijana (Naperville, IL); Meshkov, Natalia (Downers Grove, IL); Nedelijkovic, Jovan M. (Belgrade, YU); Skubal, Laura R. (West Brooklyn, IL); Tiede, David M. (Elmhurst, IL); Thurnauer, Marion (Downers Grove, IL)

2002-01-01T23:59:59.000Z

77

Microsoft Word - Yang_first.doc  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Number Number 1 Innovative Biological Solutions to Challenges 2 in Sustainable Biofuels Production 3 Xiaohan Yang 1,2 et al. * 4 1 Biosciences Division, Oak Ridge National Laboratory 5 2 BioEnergy Science Center, Oak Ridge National Laboratory, Oak Ridge 6 1,2,4 USA 7 1. Introduction 8 The rising prices, declining supplies, and concerns about environmental safety and energy 9 security associated with the use of fossil fuels are driving the development and use of 10 biofuels (Gonzalez-Garcia et al., 2010; Markevicius et al., 2010; Singh et al., 2010; Sahin, 2011). 11 Biofuels in general can be defined as liquid, gas and solid fuels predominantly produced 12 from biomass (Demirbas, 2008). In this chapter, we will specifically focus on liquid biofuels

78

Semiconductor-based optical refrigerator  

DOE Patents [OSTI]

Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

Epstein, Richard I. (Santa Fe, NM); Edwards, Bradley C. (Nekoosa, WI); Sheik-Bahae, Mansoor (Albuquerque, NM)

2002-01-01T23:59:59.000Z

79

Mechanical scriber for semiconductor devices  

DOE Patents [OSTI]

A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer. 5 figs.

Lin, P.T.

1985-03-05T23:59:59.000Z

80

Nanostructured Thermoelectric Materials: From Superlattices to Nanocomposites Ronggui Yang1  

E-Print Network [OSTI]

Nanostructured Thermoelectric Materials: From Superlattices to Nanocomposites Ronggui Yang1. Materials with a large thermoelectric figure of merit can be used to develop efficient solid-state devices nanocomposites, aiming at developing high efficiency thermoelectric energy conversion materials. 1. Introduction

Chen, Gang

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Automating Logic Rectification by Approximate SPFDs Yu-Shen Yang  

E-Print Network [OSTI]

Automating Logic Rectification by Approximate SPFDs Yu-Shen Yang Dept. of ECE University of Toronto changes or implement incremental rewiring-based optimization operations. Most existing automated logic

Veneris, Andreas

82

NREL: Biomass Research - Shihui (Shane) Yang, Ph.D.  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Publications Yang, S.; Franden, A.; Chou, Y.-C.; Brown, S.D.; Pienkos, P.T.; Zhang, M. (2014). "Insights into acetate toxicity in Zymomonas mobilis 8b using different substrates."...

83

Finite Action Yang-Mills Solutions on the Group Manifold  

E-Print Network [OSTI]

We demonstrate that the left (and right) invariant Maurer-Cartan forms for any semi-simple Lie group enable one to construct solutions of the Yang-Mills equations on the group manifold equipped with the natural Cartan-Killing metric. For the unitary unimodular groups the Yang-Mills action integral is finite for such solutions. This is explicitly exhibited for the case of $SU(3)$.

T Dereli; J Schray; Robin W Tucker

1996-05-17T23:59:59.000Z

84

Stretchable semiconductor elements and stretchable electrical circuits  

DOE Patents [OSTI]

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Rogers, John A. (Champaign, IL); Khang, Dahl-Young (Seoul, KR); Menard, Etienne (Durham, NC)

2009-07-07T23:59:59.000Z

85

Optical devices featuring textured semiconductor layers  

DOE Patents [OSTI]

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Moustakas, Theodore D. (Dover, MA); Cabalu, Jasper S. (Cary, NC)

2012-08-07T23:59:59.000Z

86

Optical devices featuring textured semiconductor layers  

DOE Patents [OSTI]

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Moustakas, Theodore D. (Dover, MA); Cabalu, Jasper S. (Cary, NC)

2011-10-11T23:59:59.000Z

87

Photon Statistics of Semiconductor Light Sources.  

E-Print Network [OSTI]

??In recent years, semiconductor light sources have become more and more interesting in terms of applications due to their high efficiency and low cost. Advanced (more)

Amann, Marc

2010-01-01T23:59:59.000Z

88

Earth-abundant semiconductors for photovoltaic applications ...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Earth-abundant semiconductors for photovoltaic applications Thin film photovoltaics (solar cells) has the potential to revolutionize our energy landscape by producing clean,...

89

Sandia National Labs: PCNSC: Research: Compound Semiconductor...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and chemistry foundations to advance the state-of-the-art compound semiconductor optoelectronic materials and devices. Our approach is based on a focused effort including...

90

Wide Bandgap Semiconductors for Clean Energy Workshop  

Broader source: Energy.gov [DOE]

A workshop on Wide Bandgap (WBG) Semiconductors for Clean Energy (held July 25, 2012, in Chicago, Illinois) brought together stakeholders from industry and academia to discuss the technical status of WBG semiconductors. The workshop also explored emerging WBG market applications in clean energy and barriers to the development and widespread commercial use of WBG semiconductors. Improving the quality and reliability of WBG semiconductorsand reducing their manufacturing costscould accelerate their use in automotive, power electronics, solid-state lighting, and other clean energy applications.

91

Low Energy Ion Implantationin Semiconductor Manufacturing | U...  

Office of Science (SC) Website

Low Energy Ion Implantation in Semiconductor Manufacturing Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Applications of Nuclear Science...

92

Climate VISION: Private Sector Initiatives: Semiconductors: Work...  

Office of Scientific and Technical Information (OSTI)

Plans The Semiconductor Industry Association has finalized its work plan with the collaboration of EPA. The plan describes actions the industry intends to take to achieve its...

93

CCEC Seminar Wireless Sensors for SemiconductorWireless Sensors for Semiconductor  

E-Print Network [OSTI]

CCEC Seminar Wireless Sensors for SemiconductorWireless Sensors for Semiconductor Manufacturing perhaps. In this talk, we describe our efforts in developing a new class of wireless sensors for use in semiconductor manufacturing. These sensors are fully self-contained with on board power, communications

Akhmedov, Azer

94

E-Print Network 3.0 - air yang digunakan Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and Information Sciences 67 For more information, please contact Prof. EH Yang at Eui-Hyeok.Yang@stevens.edu or 201-216-5574 STEVENS INSTITUTE OF TECHNOLOGY Summary: For...

95

Solution of symmetry equation and hierarchy of self dual Yang-Mills systems  

E-Print Network [OSTI]

The solution of symmetry equation of Yang-Mills self dual system is found in explicit form of its raising Hamiltonian operator. Thus explicit form of equations of self dual Yang Mills hierarchy is constructed.

A. N. Leznov

2008-02-11T23:59:59.000Z

96

Acoustoelectric Interactions in Piezoelectric Semiconductors  

Science Journals Connector (OSTI)

Piezoelectric semiconductors such as cadmium sulfide exhibit a strong coupling between conduction electrons that are present in the substance and acoustic waves that are propagated along certain directions in the material. This energy exchange mechanism is highly nonlinear, and thus the simultaneous introduction of several collinear acoustic waves into the substance generates new signals at the conbination (sum and difference) frequencies. A theoretical explanation of this interaction mechanism, based on consideration of the nonlinear cross term present in the current-density equation, has been developed, and the validity of this method of analysis has been tested and qualitatively confirmed through experimentation.

R. Mauro and W. C. Wang

1970-01-15T23:59:59.000Z

97

Optic probe for semiconductor characterization  

DOE Patents [OSTI]

Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

Sopori, Bhushan L. (Denver, CO); Hambarian, Artak (Yerevan, AM)

2008-09-02T23:59:59.000Z

98

Charge-carrier transport in amorphous organic semiconductors  

E-Print Network [OSTI]

Since the first reports of efficient luminescence and absorption in organic semiconductors, organic light-emitting devices (OLEDs) and photovoltaics (OPVs) have attracted increasing interest. Organic semiconductors have ...

Limketkai, Benjie, 1982-

2008-01-01T23:59:59.000Z

99

Comments on the National Technology Roadmap for Semiconductors  

Science Journals Connector (OSTI)

The SIA National Technology Roadmap for Semiconductors (NTRS) [1] represents ... in defining a unified description of the semiconductor technology requirements for ensuring advancements in the performance ... an ...

James F. Freedman

1996-01-01T23:59:59.000Z

100

Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal Transition and Remarkable Large Magnetism. Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal Transition...

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Engineering Density of States of Earth Abundant Semiconductors...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Density of States of Earth Abundant Semiconductors for Enhanced Thermoelectric Power Factor Engineering Density of States of Earth Abundant Semiconductors for Enhanced...

102

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print Wednesday, 29 November 2006 00:00...

103

Wide Bandgap Semiconductors for Clean Energy Workshop Agenda  

Energy Savers [EERE]

Wide Bandgap Semiconductors for Clean Energy Workshop Wednesday, July 25, 2012 Hilton Rosemont O'Hare, Chicago, IL Introduction Wide bandgap (WBG) semiconductors operate at...

104

Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronic...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronics for...

105

Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronic...  

Broader source: Energy.gov (indexed) [DOE]

Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Webinar: Opportunities for Wide Bandgap Semiconductor Power...

106

Preparation of a semiconductor thin film  

DOE Patents [OSTI]

A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Pehnt, Martin (TuBingen, DE); Schulz, Douglas L. (Denver, CO); Curtis, Calvin J. (Lakewood, CO); Ginley, David S. (Evergreen, CO)

1998-01-01T23:59:59.000Z

107

Preparation of a semiconductor thin film  

DOE Patents [OSTI]

A process is disclosed for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Pehnt, M.; Schulz, D.L.; Curtis, C.J.; Ginley, D.S.

1998-01-27T23:59:59.000Z

108

e! Science News Semiconductor manufacturing technique holds  

E-Print Network [OSTI]

arsenide chips manufactured in multilayer stacks: light sensors, high-speed transistors and solar cellse! Science News Semiconductor manufacturing technique holds promise for solar energy Published semiconductor manufacturing method pioneered at the University of Illinois, the future of solar energy just got

Rogers, John A.

109

Semiconductor heterojunction band offsets and charge neutrality  

E-Print Network [OSTI]

on semi- conductors A and B like Figure 3. 1, and commutativity of semiconductors A and B, i. e. , DEs(A ? B) = DE?(B ? A). (3. 33) We predict the charge neutrality levels &b, 4is and 4i, might align in semiconductors A, B and C as shown in Figure 3...

Lee, Chomsik

2012-06-07T23:59:59.000Z

110

Novel room temperature ferromagnetic semiconductors  

SciTech Connect (OSTI)

Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous distribution of Mn substituting for Zn a 2+ state in the ZnO lattice. Ferromagnetic Resonance (FMR) technique is used to confirm the existence of ferromagnetic ordering at temperatures as high as 425K. The ab initio calculations were found to be consistent with the observation of ferromagnetism arising from fully polarized Mn 2+ state. The key to observed room temperature ferromagnetism in this system is the low temperature processing, which prevents formation of clusters, secondary phases and the host ZnO from becoming n-type. The electronic structure of the same Mn doped ZnO thin films studied using XAS, XES and RIXS, revealed a strong hybridization between Mn 3d and O 2p states, which is an important characteristic of a Dilute magnetic Semiconductor (DMS). It is shown that the various processing conditions like sintering temperature, dopant concentration and the properties of precursors used for making of DMS have a great influence on the final properties. Use of various experimental techniques to verify the physical properties, and to understand the mechanism involved to give rise to ferromagnetism is presented. Methods to improve the magnetic moment in Mn doped ZnO are also described. New promising DMS materials (such as Cu doped ZnO are explored). The demonstrated new capability to fabricate powder, pellets, and thin films of room temperature ferromagnetic semiconductors thus makes possible the realization of a wide range of complex elements for a variety of new multifunctional phenomena related to Spintronic devices as well as magneto-optic components.

Gupta, Amita

2004-11-01T23:59:59.000Z

111

Anisotropy of Charpy Properties in API-X80 Steels MinSung Jooa, Dong-Woo Suha, Jin-Ho Baeb and H. K. D. H. Bhadeshiaa,c  

E-Print Network [OSTI]

Anisotropy of Charpy Properties in API-X80 Steels MinSung Jooa, Dong-Woo Suha, Jin-Ho Baeb and H. K~724 MPa Yield Ratio 93 % 81~87 % CVN Energy at -40°C 110 J 300~350 J API-X80 Steel Fe-(0.05~0.07)C-0. Anisotropic behavior in Charpy toughness of API-X80 steel Summary 2010 Autumn Conference of the Korean

Cambridge, University of

112

Fundamental Models for Fuel Cell Engineering Chao-Yang Wang*  

E-Print Network [OSTI]

Diagnostics 4757 4.4. Model Validation 4758 4.5. Summary and Outlook 4760 5. Solid Oxide Fuel Cells 4760 5 electrolyte fuel cells (PEFCs), direct methanol fuel cells (DMFCs), and solid oxide fuel cells (SOFCs). AlsoFundamental Models for Fuel Cell Engineering Chao-Yang Wang* Departments of Mechanical Engineering

113

Planning for Marketing Campaigns Qiang Yang and Hong Cheng  

E-Print Network [OSTI]

Planning for Marketing Campaigns Qiang Yang and Hong Cheng Department of Computer Science Hong Kong)@cs.ust.hk Abstract In business marketing, corporations and institutions are interested in executing a sequence of marketing actions to affect a group of customers. For example, a financial institution may derive marketing

Yang, Qiang

114

Jerry Yang and Akiko Yamazaki Environment and Energy Building  

High Performance Buildings Database

Stanford, CA Stanford University's Jerry Yang and Akiko Yamazaki Environment + Energy (Y2E2) Building houses a new interdisciplinary initiative for the study of energy and natural systems. It includes gathering spaces and lounges in addition to offices and laboratories.

115

Bubble growth in rhyolitic melt Yang Liu, Youxue Zhang *  

E-Print Network [OSTI]

Bubble growth in rhyolitic melt Yang Liu, Youxue Zhang * The Department of Geological Sciences June 2000; accepted 8 June 2000 Abstract We report experimental data of bubble growth in natural rhyolitic melt with 1.4^2.0 wt% initial total H2O at 0.1 MPa and 500^600³C. Growth of many bubbles

Zhang, Youxue

116

Semiconductor Nanoclusters as Potential Photocatalysts  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

High Power Electronics Based on the 2-Dimensional Electron Gas in GaN High Power Electronics Based on the 2-Dimensional Electron Gas in GaN Heterostructures by S. R. Kurtz, A. A. Allerman, and D. Koleski Motivation-GaN-based electronics offer miniaturization potential of radical proportions for microwave power amplifiers. GaN's large bandgap, high breakdown field, high electron velocity, and excellent thermal properties have led to high electron mobility transistors (HEMT) with up to 10x the power density of GaAs and other traditional semiconductors at frequencies up to 20 GHz. Further contributing to the outstanding performance of GaN-based amplifiers is the highly conducting, 2-dimensional electron gas (2DEG) used for the HEMT channel. Intrinsic polarization and piezoelectric properties of GaN materials can produce a 2DEG at an

117

Energy Management in Semiconductor Cleanrooms  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

6 6 Energy Management in Semiconductor Cleanrooms Cleanrooms are used extensively in the manufacturing of integrated circuits and in the biological and pharmaceutical industries. For particle concentrations to remain low, for example, less than 100 particles/ft3 at >0.5 micrometers (Class 100), the air in the cleanroom must be filtered. Typically, the air is circulated through high-efficiency particulate air (HEPA) filters at a very high rate, such as 400 to 600 room air volumes per hour, to maintain low particle concentrations. The combined effect of high recirculation and a high pressure drop through HEPA filters is higher power costs per unit floor area to operate the cleanroom than to ventilate a commercial building. Cleanrooms are usually ventilated constantly and

118

Boron doping a semiconductor particle  

DOE Patents [OSTI]

A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

Stevens, Gary Don (18912 Ravenglen Ct., Dallas, TX 75287); Reynolds, Jeffrey Scott (703 Horizon, Murphy, TX 75094); Brown, Louanne Kay (2530 Poplar Tr., Garland, TX 75042)

1998-06-09T23:59:59.000Z

119

Heating device for semiconductor wafers  

DOE Patents [OSTI]

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernable pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

Vosen, Steven R. (Berkeley, CA)

1999-01-01T23:59:59.000Z

120

Heating device for semiconductor wafers  

DOE Patents [OSTI]

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernible pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light. 4 figs.

Vosen, S.R.

1999-07-27T23:59:59.000Z

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

AgBiS2 Semiconductor-Sensitized Solar Cells  

Science Journals Connector (OSTI)

AgBiS2 Semiconductor-Sensitized Solar Cells ... We present a new ternary semiconductor sensitizer-AgBiS2 for solar cells. ... Liquid-junction semiconductor-sensitized solar cells were fabricated from the synthesized AgBiS2 semiconductor. ...

Pen-Chi Huang; Wei-Chih Yang; Ming-Way Lee

2013-08-16T23:59:59.000Z

122

Transport Equations for Semiconductors Prof. Dr. Ansgar Jungel  

E-Print Network [OSTI]

- cations have been invented; for instance, semiconductor lasers, solar cells, light-emitting diodes (LED

Jüngel, Ansgar

123

ECE 344--Semiconductor Devices & Materials ECE Department, UMass Amherst  

E-Print Network [OSTI]

Topics: Fundamentals of Semiconductors; Theory of Electrical Conduction; Device Operations (See "Class

Massachusetts at Amherst, University of

124

Diluted magnetic semiconductor nanowires exhibiting magnetoresistance  

DOE Patents [OSTI]

A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

Yang, Peidong (El Cerrito, CA); Choi, Heonjin (Seoul, KR); Lee, Sangkwon (Daejeon, KR); He, Rongrui (Albany, CA); Zhang, Yanfeng (El Cerrito, CA); Kuykendal, Tevye (Berkeley, CA); Pauzauskie, Peter (Berkeley, CA)

2011-08-23T23:59:59.000Z

125

Mospec Semiconductor Corp | Open Energy Information  

Open Energy Info (EERE)

Mospec Semiconductor Corp Mospec Semiconductor Corp Jump to: navigation, search Name Mospec Semiconductor Corp Place Tainan, Taiwan Sector Solar Product Taiwanese semiconductor products producer; offers monocrystalline silicon wafers and as of April 2008, ingots for the solar industry. Coordinates 22.99721°, 120.180862° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":22.99721,"lon":120.180862,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

126

Hemlock Semiconductor Corp HSC | Open Energy Information  

Open Energy Info (EERE)

Hemlock Semiconductor Corp HSC Hemlock Semiconductor Corp HSC Jump to: navigation, search Name Hemlock Semiconductor Corp (HSC) Place Hemlock, Michigan Zip 48626 Sector Solar Product US-based manufacturer polycrystalline silicon for semiconductor and solar industries. Coordinates 39.589497°, -82.153275° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":39.589497,"lon":-82.153275,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

127

Climate VISION: Private Sector Initiatives: Semiconductors  

Office of Scientific and Technical Information (OSTI)

Letters of Intent/Agreements Letters of Intent/Agreements The U.S. semiconductor industry, represented by the members of the Environmental Protection Agency's PFC Reduction/Climate Partnership for the Semiconductor Industry, has committed to reduce absolute perfluorocompound (PFC) emissions by 10% below the 1995 baseline level by the year 2010. Perfluorocompounds include the most potent and long-lived greenhouse gases such as perfluorocarbons (e.g., CF4, C2F6, C3F8), trifluoromethane (CHF3), nitrogen trifluoride (NF3), and sulfur hexafluoride (SF6). The Environmental Protection Agency's (EPA) voluntary semiconductor industry partnership was developed collaboratively with the Semiconductor Industry Association (SIA). EPA, SIA, and the Partner companies (listed below) are working to reduce industry greenhouse gas (GHG) emissions. EPA's

128

Narrow band gap amorphous silicon semiconductors  

DOE Patents [OSTI]

Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

Madan, A.; Mahan, A.H.

1985-01-10T23:59:59.000Z

129

Sandia National Laboratories: wide-bandgap semiconductor  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

electroluminescence was first reported by H.J. Round in 1907, and the first light-emitting diode (LED) was reported by O.V. Losev in 1927. Not until the birth of semiconductor...

130

ITRS: The International Technology Roadmap for Semiconductors  

Science Journals Connector (OSTI)

In a move singular for the worlds industry, the semiconductor industry established a quantitative strategy for its progress with the establishment of the ITRS. In its 17th year, it has been extended in 2009 t...

Bernd Hoefflinger

2012-01-01T23:59:59.000Z

131

Wide Bandgap Semiconductors: Pursuing the Promise  

Broader source: Energy.gov [DOE]

Wide bandgap semiconductor materials are more efficient than their silicon-based counterparts; making it possible to reduce weight, volume, and life-cycle costs in a wide range of power applications.

132

Thermovoltaic semiconductor device including a plasma filter  

DOE Patents [OSTI]

A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

Baldasaro, Paul F. (Clifton Park, NY)

1999-01-01T23:59:59.000Z

133

Gaining creative control over semiconductor nanowires  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Gaining creative control over semiconductor nanowires Gaining creative control over semiconductor nanowires Gaining creative control over semiconductor nanowires Using a microfluidic reactor, Los Alamos researchers transformed the SLS process into a flow-based technique. September 26, 2013 Growth of nanowire precursors in a flowing carrier solvent Growth of nanowire precursors in a flowing carrier solvent The new "flow" solution-liquid-solid method allows scientists to slow down growth and thereby capture mechanistic details as the nanowires grow in solution. A Los Alamos research team has transformed the synthesis process of semiconductor nanowires for use in solar cells, batteries, electronics, sensors and photonics using a solution-liquid-solid (SLS) batch approach to achieve unprecedented control over growth rates, nanowire size and internal

134

Optical temperature indicator using thermochromic semiconductors  

DOE Patents [OSTI]

A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

Kronberg, J.W.

1995-01-01T23:59:59.000Z

135

All-optical logic gates based on vertical cavity semiconductor optical amplifiers  

E-Print Network [OSTI]

in International Technology Roadmap for Semiconductors 2007in International Technology Roadmap for Semiconductors 2007The 2007 International Technology Roadmap for Semiconductors

Gauss, Veronica Andrea

2009-01-01T23:59:59.000Z

136

E-Print Network 3.0 - area semiconductor laser Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

areas of semiconductor... for conducting research on wide bandgap semiconductor optoelectronics in my research group, within the Center... bandgap III-Nitride semiconductor...

137

Quantum Yang-Mills Condensate Dark Energy Models  

E-Print Network [OSTI]

We review the quantum Yang-Mills condensate (YMC) dark energy models. As the effective Yang-Mills Lagrangian is completely determined by the quantum field theory, there is no adjustable parameter in the model except the energy scale. In this model, the equation-of-state (EOS) of the YMC dark energy, $w_y > -1$ and $w_y 0$ into $w_y < -1$, which is slightly suggested by the observations. At the same time, the total EOS in the attractor solution is $w_{tot} = -1$, the universe being the de Sitter expansion in the late stage, and the cosmic big rip is naturally avoided. These features are all independent of the interacting forms.

Zhao, W; Tong, M L

2009-01-01T23:59:59.000Z

138

Functional Approach to Classical Yang-Mills Theories  

E-Print Network [OSTI]

Sometime ago it was shown that the operatorial approach to classical mechanics, pioneered in the 30's by Koopman and von Neumann, can have a functional version. In this talk we will extend this functional approach to the case of classical field theories and in particular to the Yang-Mills ones. We shall show that the issues of gauge-fixing and Faddeev-Popov determinant arise also in this classical formalism.

P. Carta; D. Mauro

2001-07-10T23:59:59.000Z

139

Sandia National Labs: PCNSC: Departments: Semiconductor and Optical  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Semiconductor & Optical Sciences Semiconductor & Optical Sciences > Semiconductor Material & Device Sciences > Advanced Materials Sciences > Lasers, Optics & Remote Sensing Energy Sciences Small Science Cluster Business Office News Partnering Research Jeff Nelson Jerry A. Simmons Sr. Manager Idabelle Idabelle Courtney Admin. Asst. Departments Semiconductor and Optical Sciences The Semiconductor and Optical Sciences Department oversees the operations of the following departments providing new scientific knowledge that can lead to technology solutions in the areas of: Compound semiconductor optoelectronic materials and devices Chemical science to materials technologies, emphasizing the science and engineering of Metal Organic Chemical Vapor Deposition (MOCVD) Remote sensing and detection of WMD proliferation activities

140

Extracting hot carriers from photoexcited semiconductor nanocrystals  

SciTech Connect (OSTI)

This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called Shockley-Queisser limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates hot charge carriers that quickly cool to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a phonon bottleneck wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

Zhu, Xiaoyang

2014-12-10T23:59:59.000Z

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Light sources based on semiconductor current filaments  

DOE Patents [OSTI]

The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

Zutavern, Fred J. (Albuquerque, NM); Loubriel, Guillermo M. (Albuquerque, NM); Buttram, Malcolm T. (Sandia Park, NM); Mar, Alan (Albuquerque, NM); Helgeson, Wesley D. (Albuquerque, NM); O'Malley, Martin W. (Edgewood, NM); Hjalmarson, Harold P. (Albuquerque, NM); Baca, Albert G. (Albuquerque, NM); Chow, Weng W. (Cedar Crest, NM); Vawter, G. Allen (Albuquerque, NM)

2003-01-01T23:59:59.000Z

142

Zecon Solar Semiconductor Inc | Open Energy Information  

Open Energy Info (EERE)

Zecon Solar Semiconductor Inc Zecon Solar Semiconductor Inc Jump to: navigation, search Name Zecon Solar & Semiconductor Inc Place Cupertino, California Zip 95014 Sector Solar Product Focused on large-scale solar building integrated PV systems. Coordinates 37.31884°, -122.029244° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.31884,"lon":-122.029244,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

143

Two-Photon Emission from Semiconductors  

E-Print Network [OSTI]

We report the first experimental observations of two-photon emission from semiconductors, to the best of our knowledge, and develop a corresponding theory for the room-temperature process. Spontaneous two-photon emission is demonstrated in optically-pumped bulk GaAs and in electrically-driven GaInP/AlGaInP quantum wells. Singly-stimulated two-photon emission measurements demonstrate the theoretically predicted two-photon optical gain in semiconductors - a necessary ingredient for any realizations of future two-photon semiconductor lasers. Photon-coincidence experiment validates the simultaneity of the electrically-driven GaInP/AlGaInP two-photon emission, limited only by detector's temporal resolution.

Alex Hayat; Pavel Ginzburg; Meir Orenstein

2007-10-25T23:59:59.000Z

144

Substrate solder barriers for semiconductor epilayer growth  

DOE Patents [OSTI]

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

1989-05-09T23:59:59.000Z

145

Substrate solder barriers for semiconductor epilayer growth  

DOE Patents [OSTI]

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In molecular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating. 1 tab.

Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

1987-10-23T23:59:59.000Z

146

Emissivity Correcting Pyrometry of Semiconductor Growth  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Emissivity Correcting Pyrometry of Semiconductor Growth Emissivity Correcting Pyrometry of Semiconductor Growth by W. G. Breiland, L. A. Bruskas, A. A. Allerman, and T. W. Hargett Motivation-Temperature is a critical factor in the growth of thin films by either chemical vapor deposition (CVD) or molecular beam epitaxy (MBE). It is particularly important in compound semiconductor growth because one is often challenged to grow materials with specific chemical compositions in order to maintain stringent lattice-matching conditions or to achieve specified bandgap values. Optical pyrometry can be used to measure surface temperatures, but the thin film growth causes significant changes in the emissivity of the surface, leading to severe errors in the pyrometer measurement. To avoid these errors, emissivity changes must be measured and

147

Semiconductor Equipment and Materials International SEMI | Open Energy  

Open Energy Info (EERE)

Semiconductor Equipment and Materials International SEMI Semiconductor Equipment and Materials International SEMI Jump to: navigation, search Name Semiconductor Equipment and Materials International (SEMI) Place San Jose, California Zip 95134 2127 Product Global trade association, publisher and conference organiser representing the semiconductor and flat panel display equipment manufacturers. References Semiconductor Equipment and Materials International (SEMI)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Semiconductor Equipment and Materials International (SEMI) is a company located in San Jose, California . References ↑ "Semiconductor Equipment and Materials International (SEMI)" Retrieved from "http://en.openei.org/w/index.php?title=Semiconductor_Equipment_and_Materials_International_SEMI&oldid=350739

148

A New Cleanroom for a Next-Generation Semiconductor Research...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A New Cleanroom for a Next-Generation Semiconductor Research Tool A New Cleanroom for a Next-Generation Semiconductor Research Tool Print The new Sector 12 cleanroom under...

149

Lattice mismatched compound semiconductors and devices on silicon  

E-Print Network [OSTI]

III-V compound semiconductors, due to their superior electron mobility, are promising candidates for n-type metal-oxide-semiconductor field effect transistors (MOSFETs). However, the limited size of III-V substrates and ...

Yang, Li, Ph. D. Massachusetts Institute of Technology

2011-01-01T23:59:59.000Z

150

Silicon Carbide Power Semiconductor Devices in the Cleanroom...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Silicon Carbide Power Semiconductor Devices in the Cleanroom Silicon Carbide Power Semiconductor Devices in the Cleanroom Ron Olson 2012.10.04 I would like to introduce Zach Stum,...

151

DECENTRALIZING SEMICONDUCTOR CAPACITY PLANNING VIA INTERNAL MARKET COORDINATION  

E-Print Network [OSTI]

1 DECENTRALIZING SEMICONDUCTOR CAPACITY PLANNING VIA INTERNAL MARKET COORDINATION SULEYMAN KARABUK semiconductor manufacturer: marketing managers reserve capacity from manufacturing based on product demands, while attempting to maximize profit; manufacturing managers allocate capacity to competing marketing

Wu, David

152

APPLIED PHYSICS REVIEWS Semi-insulating semiconductor heterostructures: Optoelectronic  

E-Print Network [OSTI]

APPLIED PHYSICS REVIEWS Semi-insulating semiconductor heterostructures: Optoelectronic properties of optoelectronic properties of and uses for semi-insulating semiconductor heterostructures and thin films. The principal optical and optoelectronic properties of semi-insulating epilayers and heterostructures

Nolte, David D.

153

Taiwan Semiconductor Manufacturing Co Ltd TSMC | Open Energy Information  

Open Energy Info (EERE)

Semiconductor Manufacturing Co Ltd TSMC Semiconductor Manufacturing Co Ltd TSMC Jump to: navigation, search Name Taiwan Semiconductor Manufacturing Co Ltd (TSMC) Place Hsinchu, Taiwan Zip 300 Sector Solar Product Taiwan-based semiconductor company. The firm is also venturing into solar and LED production. References Taiwan Semiconductor Manufacturing Co Ltd (TSMC)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Taiwan Semiconductor Manufacturing Co Ltd (TSMC) is a company located in Hsinchu, Taiwan . References ↑ "Taiwan Semiconductor Manufacturing Co Ltd (TSMC)" Retrieved from "http://en.openei.org/w/index.php?title=Taiwan_Semiconductor_Manufacturing_Co_Ltd_TSMC&oldid=352012"

154

Method Of Transferring A Thin Crystalline Semiconductor Layer  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Method Of Transferring A Thin Crystalline Semiconductor Layer Method Of Transferring A Thin Crystalline Semiconductor Layer Method Of Transferring A Thin Crystalline Semiconductor Layer A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. Available for thumbnail of Feynman Center (505) 665-9090 Email Method Of Transferring A Thin Crystalline Semiconductor Layer A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure

155

Semiconductor nanowires DOI: 10.1002/smll.200500094  

E-Print Network [OSTI]

of a semiconductor Si nanowire, synthesized via the VLS pro- cess, into metallic nickel silicide through parameters. Anisotropic growth of a metal onto a semiconductor nanowire (or a semicon- ductor on a metal approach to prepare metal/semiconductor nano- wire heterostructures by transforming specific sections

Rogers, John A.

156

Method of physical vapor deposition of metal oxides on semiconductors  

DOE Patents [OSTI]

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

Norton, David P. (Knoxville, TN)

2001-01-01T23:59:59.000Z

157

Fusion hierarchies for N = 4 superYang-Mills theory  

E-Print Network [OSTI]

We employ the analytic Bethe Anzats to construct eigenvalues of transfer matrices with finite-dimensional atypical representations in the auxiliary space for the putative long-range spin chain encoding anomalous dimensions of all composite single-trace gauge invariant operators of the maximally supersymmetric Yang-Mills theory. They obey an infinite fusion hierarchy which can be reduced to a finite set of integral relations for a minimal set of transfer matrices. This set is used to derive a finite systems of functional equations for eigenvalues of nested Baxter polynomials.

A. V. Belitsky

2008-03-13T23:59:59.000Z

158

Neumann domination for the Yang-Mills heat equation  

E-Print Network [OSTI]

Long time existence and uniqueness of solutions to the Yang-Mills heat equation have been proven over a compact 3-manifold with boundary for initial data of finite energy. In the present paper we improve on previous estimates by using a Neumann domination technique that allows us to get much better pointwise bounds on the magnetic field. As in the earlier work, we focus on Dirichlet, Neumann and Marini boundary conditions. In addition, we show that the Wilson Loop functions, gauge invariantly regularized, converge as the parabolic time goes to infinity.

Nelia Charalambous; Leonard Gross

2014-05-30T23:59:59.000Z

159

Second Hopf map and supersymmetric mechanics with a Yang monopole  

SciTech Connect (OSTI)

We propose to use the second Hopf map for the reduction [via SU(2) group action] of the eight-dimensional N=8 supersymmetric mechanics to five-dimensional supersymmetric systems specified by the presence of an SU(2) Yang monopole. For our purpose we develop the relevant reduction procedure. The reduced system is characterized by its invariance under the N=5 or N=4 supersymmetry generators (with or without an additional conserved Becchi-Rouet-Stora-Tyutin charge operator) which commute with the su(2) generators.

Gonzales, M.; Toppan, F. [CBPF, Rua Dr. Xavier Sigaud 150, cep 22290-180, Rio de Janeiro (RJ) (Brazil); Kuznetsova, Z. [CBPF, Rua Dr. Xavier Sigaud 150, cep 22290-180, Rio de Janeiro (RJ) (Brazil); UFABC, Rua Catequese 242, Bairro Jardim, cep 09090-400, Santo Andre (SP) (Brazil); Nersessian, A. [Artsakh State University, 5 Mkhitar Gosh Street, Stepanakert (Armenia); Yerevan State University, 1 Alex Manoogian Street, Yerevan (Armenia); Yeghikyan, V. [Yerevan State University, 1 Alex Manoogian Street, Yerevan (Armenia)

2009-07-15T23:59:59.000Z

160

A loop of SU(2) gauge fields stable under the Yang-Mills flow  

E-Print Network [OSTI]

A loop of SU(2) gauge fields stable under the Yang-Mills flow Daniel Friedan Department of Physics The gradient flow of the Yang-Mills action acts pointwise on closed loops of gauge fields. We construct in perturbations of the loop. The stable loop might play a role in physics as a classical winding mode

Friedan, Daniel

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161

High-Frequency Conductivity of Degenerate Semiconductors  

Science Journals Connector (OSTI)

The problem of high-frequency conductivity of a degenerate semiconductor is investigated by a kinetic description. The finite duration of encounters is taken into account in a self-consistent fashion which properly includes collective effects. This treatment is an extension for quantum plasmas of the Dawson-Oberman method given for classical plasmas.

Amiram Ron and Narkis Tzoar

1963-09-01T23:59:59.000Z

162

Semiconductor Nanowire Optical Antenna Solar Absorbers  

E-Print Network [OSTI]

technology. KEYWORDS Solar cell, semiconductor nanowires, optical antennas, photon management, light trapping a clear, intuitive guidance for the design of efficient NW solar cells. The presented approach to exhibit a strongly angle-dependent optical response and the resulting solar cells require bulky solar

Fan, Shanhui

163

Semiconductor detectors with proximity signal readout  

SciTech Connect (OSTI)

Semiconductor-based radiation detectors are routinely used for the detection, imaging, and spectroscopy of x-rays, gamma rays, and charged particles for applications in the areas of nuclear and medical physics, astrophysics, environmental remediation, nuclear nonproliferation, and homeland security. Detectors used for imaging and particle tracking are more complex in that they typically must also measure the location of the radiation interaction in addition to the deposited energy. In such detectors, the position measurement is often achieved by dividing or segmenting the electrodes into many strips or pixels and then reading out the signals from all of the electrode segments. Fine electrode segmentation is problematic for many of the standard semiconductor detector technologies. Clearly there is a need for a semiconductor-based radiation detector technology that can achieve fine position resolution while maintaining the excellent energy resolution intrinsic to semiconductor detectors, can be fabricated through simple processes, does not require complex electrical interconnections to the detector, and can reduce the number of required channels of readout electronics. Proximity electrode signal readout (PESR), in which the electrodes are not in physical contact with the detector surface, satisfies this need.

Asztalos, Stephen J. [XIA, LLC, Hayward, CA (United States)

2014-01-30T23:59:59.000Z

164

Organic conductive films for semiconductor electrodes  

DOE Patents [OSTI]

According to the present invention, improved electrodes overcoated with conductive polymer films and preselected catalysts are provided. The electrodes typically comprise an inorganic semiconductor over-coated with a charge conductive polymer film comprising a charge conductive polymer in or on which is a catalyst or charge-relaying agent.

Frank, A.J.

1984-01-01T23:59:59.000Z

165

Defect Tolerant Semiconductors for Solar Energy Conversion  

Science Journals Connector (OSTI)

Defect Tolerant Semiconductors for Solar Energy Conversion ... He obtained his Ph.D. in Physics at Paris-Sud University where he modeled Hot Carrier Solar Cells by means of Ensemble Monte Carlo methods. ... These surface energies are significantly lower compared to 96 and 102 meV/2 for (1010) and (1120) low energy nonpolar GaN surfaces respectively. ...

Andriy Zakutayev; Christopher M. Caskey; Angela N. Fioretti; David S. Ginley; Julien Vidal; Vladan Stevanovic; Eric Tea; Stephan Lany

2014-03-13T23:59:59.000Z

166

HYDROGEN LOCAL VIBRATIONAL MODES IN COMPOUND SEMICONDUCTORS  

E-Print Network [OSTI]

HYDROGEN LOCAL VIBRATIONAL MODES IN COMPOUND SEMICONDUCTORS M.D. MCCLUSKEY* University) spectroscopy of hydrogen and deuterium in GaP, AlSb, ZnSe, and GaN has provided important information about the structures of dopant- hydrogen complexes and their interaction with the host lattice. In GaN:Mg, for example

McCluskey, Matthew

167

Optical temperature sensor using thermochromic semiconductors  

DOE Patents [OSTI]

Optical thermometry is a growing technological field which exploits the ability of certain materials to change their optical properties with temperature. A subclass of such materials are those which change their color as a reversible and reproducible function of temperature. These materials are thermochromic. This invention is a composition to measure temperature utilizing thermochromic semiconductors.

Kronberg, J.W.

1994-01-01T23:59:59.000Z

168

High resolution scintillation detector with semiconductor readout  

DOE Patents [OSTI]

A novel high resolution scintillation detector array for use in radiation imaging such as high resolution Positron Emission Tomography (PET) which comprises one or more parallelepiped crystals with at least one long surface of each crystal being in intimate contact with a semiconductor photodetector such that photons generated within each crystal by gamma radiation passing therethrough is detected by the photodetector paired therewith.

Levin, Craig S. (Santa Monica, CA); Hoffman, Edward J. (Los Angeles, CA)

2000-01-01T23:59:59.000Z

169

A Spintronic Semiconductor with Selectable Charge Carriers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

170

A Spintronic Semiconductor with Selectable Charge Carriers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

171

A Spintronic Semiconductor with Selectable Charge Carriers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

172

A Spintronic Semiconductor with Selectable Charge Carriers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

173

A Spintronic Semiconductor with Selectable Charge Carriers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

174

A Spintronic Semiconductor with Selectable Charge Carriers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

175

Woo-Sun Yang! NERSC User Services Group  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Yang! Yang! NERSC User Services Group Debugging with DDT --- 1 --- February 1 5, 2 013 Why a debugger? * Your c ode f ails a nd y ou w ant t o k now w hy * You c ontrol t he p ace o f r unning t he c ode a nd e xamine execu@on fl ow o r v ariables t o s ee i f i t i s r unning a s expected ( beDer t han a p rint s tatement!) * Typical s cenario - Set a p lace i n y our p rogram w here y ou w ant y our p rogram t o stop e xecu7on - Let y our p rogram r un u n7l t he p lace i s r eached - Check v ariables * Gdb i s g ood b ut w e n eed t o c ontrol m ul@ple p rocessors for a p arallel p rogram --- 2 --- DDT * Distributed D ebugging T ool b y A llinea * Graphical d ebugger c apable o f d ebugging - Serial - MPI - OpenMP - CAF - UPC - CUDA ( NERSC d oesn't h ave a l icense o n D irac) * Intui@ve a nd s imple u ser i nterfaces * Available o n H opper,

176

Semiconductor P-I-N detector  

DOE Patents [OSTI]

A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

Sudharsanan, Rengarajan (53 Timber Line Dr., Nashua, NH 03062); Karam, Nasser H. (577 Lowell St., Lexington, MA 02173)

2001-01-01T23:59:59.000Z

177

Method of transferring strained semiconductor structure  

DOE Patents [OSTI]

The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the deposited multilayer structure is bonded to a second substrate and is separated away at the interface, which results in transferring a multilayer structure from one substrate to the other substrate. The multilayer structure includes at least one strained semiconductor layer and at least one strain-induced seed layer. The strain-induced seed layer can be optionally etched away after the layer transfer.

Nastasi, Michael A. (Santa Fe, NM); Shao, Lin (College Station, TX)

2009-12-29T23:59:59.000Z

178

"Magnetically dead" surface layers on ferromagnetic semiconductors  

Science Journals Connector (OSTI)

We perform an exact model calculation for the conduction-band spin structure of ferromagnetic semiconductors. The purpose of this illustrative quasiatomic theory (which is an abstraction of our earlier general theory) is to demonstrate that the case T=0 (i.e., ferromagnetic saturation) exhibits vanishingly small spectral weights of certain quasiparticle or scattering states which, however, become manifest for T>0, and determine the electron-spin polarization. Hence T=0 results cannot be generalized to nonzero temperatures and should not be used to prove or disprove the existence of "magnetically dead" surface layers on ferromagnetic semiconductors. The existence of such dead layers has frequently been postulated to explain the electron-spin polarization in photoemission and field-emission experiments.

W. Nolting and B. Reihl

1983-10-01T23:59:59.000Z

179

Optical cavity furnace for semiconductor wafer processing  

DOE Patents [OSTI]

An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

Sopori, Bhushan L.

2014-08-05T23:59:59.000Z

180

Semiconductor Manufacturing International Corp SMIC | Open Energy  

Open Energy Info (EERE)

Manufacturing International Corp SMIC Manufacturing International Corp SMIC Jump to: navigation, search Name Semiconductor Manufacturing International Corp (SMIC) Place Shanghai, Shanghai Municipality, China Zip 201203 Sector Solar Product Semiconductor group launching solar cell production from its recycled silicon wafers. Coordinates 31.247709°, 121.472618° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.247709,"lon":121.472618,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

A Markovian analysis of semiconductor manufacturing processes  

E-Print Network [OSTI]

) Karan L. Watson (Member) Martin A. Wortman (Member) ep Sastri (Member) o W. Howze (Head of Department) December 1991 ABSTRACT A Markovian Analysis of Semiconductor Manufacturing Processes. (December 1991) Kent Eugene Schultz, B. S. , Iowa... grateful to Dr. Martin Wortman, for his pa- tience and endless stream of examples to help me understand stochastic processes. I would also like to thank Dr. Tep Sastri for his patience and for always having a refer- ence available when I needed it...

Schultz, Kent Eugene

2012-06-07T23:59:59.000Z

182

Electrical Usage Characterization of Semiconductor Processing Tools  

E-Print Network [OSTI]

ELECTRICAL USAGE CHARACTERIZATION OF SEMICONDUCTOR PROCESSING TOOLS Scott R. Hinson Associate Engineer Radian Electronic Systems 15705 Long Vista Drive Austin, TX 78751 Abstract This paper presents the basic concepts in performing... be completed using as much detail as possible. The most often cited reason for aUditing process tools is the large discrepancy between the facilities requirements listed on the tool nameplate and the actual measured usage. I have measured systems...

Hinson, S. R.

183

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

184

Microsoft PowerPoint - An Integrated Study_Yang  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Study on the Novel Thermal Barrier Coating Study on the Novel Thermal Barrier Coating for Nb-based High Temperature Alloy Shizhong Yang, Ebrahim Khosravi Southern University and A & M College 6/12/2013 Pittsburgh, PA Outline *Introduction *Simulation and Experiment Results *Future work *Acknowledgement Introduction * Project Period: 10/1/2011 ~ 9/30/2013 * Project Manager: Richard Dunst * Project Objectives: (1) Perform interface energy and HPC simulation on the bond coat/Nb-based alloy and top coat/bond coat models to screen out the potential bond coat candidates. (2). Study the high temperature properties and the oxidation resistance capabilities through molecular dynamics simulation. (3). Perform experiments on the oxidation resistance of the most promising systems from the simulation. The isothermal oxidation and corrosiveness

185

Skutterudite Thermoelectric Materials Jihui Yang, Xun Shi, General Motors  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

the Microstructure of Doped Clathrate and the Microstructure of Doped Clathrate and Skutterudite Thermoelectric Materials Jihui Yang, Xun Shi, General Motors Hsin Wang and Miaofang Chi, Oak Ridge National Laboratory Scientific challenge/problem: Clathrate and Skutterudite are known to be promising thermoelectric materials. The R&D groups at GM and ORNL have found that doping Clathrate (Ba 0.25 Co 4 Sb 12 ) with Yb and La and doping Skutterudite (Ba 8 Ga 16 Ge 30 ) with Ni improve the thermoelectrical properties significantly. The goal of the microscopy characterization is to fundamentally understand how the dopants control the materials properties. Two questions need to be answered at the current stage of our experimental work: how the microstructures are tailored by the dopants and how the dopants distribute

186

Microsoft PowerPoint - Novel Nano-size_Yang  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Nano-size Oxide Dispersion Nano-size Oxide Dispersion Strengthened Steels Development through Computational and Experimental Study Shizhong Yang, Ebrahim Khosravi Southern University and A & M College 6/12/2013 Pittsburgh, PA Outline Introduction Methods Preliminary Results Future Work Acknowledgement Introduction * Project Period: 6/1/2012 --- 5/31/2015 * Project Manager: Vito Cedro * Project Objectives: (1). Perform interface energy and molecular dynamics/Monte Carlo HPC simulation on the ODS models to screen out the potential high temperature and high pressure ODS candidates. (2). Perform experiments on the high temperature and high pressure property of the most promising ODS systems from the simulation. (3). Students/postdocs training. Introduction 1. The oxide dispersion strengthened (ODS) steel alloys have higher

187

Wide Bandgap Semiconductors: Essential to Our Technology Future |  

Broader source: Energy.gov (indexed) [DOE]

Wide Bandgap Semiconductors: Essential to Our Technology Future Wide Bandgap Semiconductors: Essential to Our Technology Future Wide Bandgap Semiconductors: Essential to Our Technology Future January 15, 2014 - 8:00am Addthis Learn how wide bandgap semiconductors could impact clean energy technology and our daily lives. | Video by Sarah Gerrity and Matty Greene, Energy Department. Dr. Ernest Moniz Dr. Ernest Moniz Secretary of Energy What are the key facts? North Carolina State University will lead the Energy Department's new manufacturing innovation institute for the next generation of power electronics, focusing on wide bandgap (WBG) semiconductors. Building America's leadership in WBG semiconductor manufacturing while driving down the cost of the technology could lead to more affordable products for businesses and consumers, billions of dollars in energy

188

Climate VISION: Private Sector Initiatives: Semiconductors: Resources and  

Office of Scientific and Technical Information (OSTI)

Semiconductor Industry Association (SIA) The Semiconductor Industry Association (SIA) is the premier trade association representing the U.S. semiconductor industry. Founded in 1977 by five microelectronics innovators, the SIA has grown to include over 100 companies that account for more than 83% of U.S.-based semiconductor production. The SIA provides a forum for domestic semiconductor companies to work collectively to advance the competitiveness of the $70 billion U.S. chip industry. Through its national and international network of chief executive officers and working committees, the SIA shapes public policy on issues important to the industry and provides a spectrum of services to help its members grow their businesses. World Semiconductor Council (WSC)

189

Semiconductor and Materials Company Inc SAMCO | Open Energy Information  

Open Energy Info (EERE)

and Materials Company Inc SAMCO and Materials Company Inc SAMCO Jump to: navigation, search Name Semiconductor and Materials Company Inc (SAMCO) Place Kyoto, Kyoto, Japan Zip 612-8443 Sector Solar Product Japanese manufactruer of semiconductor and solar manufacturing equipment such as etching, deposition and cleaning systems. References Semiconductor and Materials Company Inc (SAMCO)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Semiconductor and Materials Company Inc (SAMCO) is a company located in Kyoto, Kyoto, Japan . References ↑ "Semiconductor and Materials Company Inc (SAMCO)" Retrieved from "http://en.openei.org/w/index.php?title=Semiconductor_and_Materials_Company_Inc_SAMCO&oldid=350738

190

Method and system for powering and cooling semiconductor lasers  

DOE Patents [OSTI]

A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

Telford, Steven J; Ladran, Anthony S

2014-02-25T23:59:59.000Z

191

Deposition method for producing silicon carbide high-temperature semiconductors  

DOE Patents [OSTI]

An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

Hsu, George C. (La Crescenta, CA); Rohatgi, Naresh K. (W. Corine, CA)

1987-01-01T23:59:59.000Z

192

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents [OSTI]

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Urbana, IL); Lee, Keon Jae (Savoy, IL); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Champaign, IL); Zhu, Zhengtao (Urbana, IL)

2009-11-24T23:59:59.000Z

193

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents [OSTI]

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

2013-05-14T23:59:59.000Z

194

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents [OSTI]

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

2014-03-04T23:59:59.000Z

195

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents [OSTI]

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Durham, NC); Lee, Keon Jae (Daejeon, KR); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Raleigh, NC); Zhu, Zhengtao (Urbana, IL)

2011-07-19T23:59:59.000Z

196

Heterogeneous Three-Dimensional Electronics by Use of Printed Semiconductor Nanomaterials  

Science Journals Connector (OSTI)

...through the Frederick Seitz Materials Research Laboratory (FS-MRL). We thank T. Banks and K. Colravy for help with cleanroom and other facilities at the Frederick Seitz Materials Research Laboratory and H. C. Ko, Q. Cao, P. Ferreira, J. Dong...

Jong-Hyun Ahn; Hoon-Sik Kim; Keon Jae Lee; Seokwoo Jeon; Seong Jun Kang; Yugang Sun; Ralph G. Nuzzo; John A. Rogers

2006-12-15T23:59:59.000Z

197

Climate VISION: Private Sector Initiatives: Semiconductors: Resources and  

Office of Scientific and Technical Information (OSTI)

Technical Information Technical Information Download Acrobat Reader Modeling China's Semiconductor Industry Fluorinated Compound Emissions and Drafting a Roadmap for Climate Protection. (PDF 101 KB) 14th Annual International Semiconductor Environment Safety & Health (ISESH) Conference in Jeju, Korea (June 2007) presentation by Scott Bartos, U.S. EPA. Estimating the Impact of Migration to Asian Foundry Production on Attaining the WSC 2010 PFC Reduction Goal. (PDF 458 KB) 11th Annual ISESH Conference in Makuhari, Japan (July 2004) presentation by Scott Bartos, U.S. EPA. Guidelines for Environmental Characterization of Semiconductor Equipment (PDF 361 KB) This document provides guidelines for suppliers of semiconductor processing and abatement equipment to characterize their equipment to meet

198

July 28, 2010, Guiding semiconductor research through collaborative engagement  

Broader source: Energy.gov (indexed) [DOE]

The SRC ... The SRC ... Guiding semiconductor research through collaborative engagement Elizabeth J. Weitzman Exec. VP, SRC Exec. Director, Focus Center Research Program Semiconductor Research Corporation 2 ... Awarded Nat'l Medal of Technology Presidential Citation: "For building the world's largest and most successful university research force to support the ... semiconductor industry; For proving the concept of collaborative research as the first high-tech research consortium; and For creating the concept and methodology that evolved into the International Technology Roadmap for Semiconductors." 3 Key Attributes of SRC Research Entities 1. Accepted IP model. SRC's model has been

199

Semiconductor research capabilities at the Lawrence Berkeley Laboratory  

SciTech Connect (OSTI)

This document discusses semiconductor research capabilities (advanced materials, processing, packaging) and national user facilities (electron microscopy, heavy-ion accelerators, advanced light source). (DLC)

Not Available

1987-02-01T23:59:59.000Z

200

Method for depositing high-quality microcrystalline semiconductor materials  

DOE Patents [OSTI]

A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

Guha, Subhendu (Bloomfield Hills, MI); Yang, Chi C. (Troy, MI); Yan, Baojie (Rochester Hills, MI)

2011-03-08T23:59:59.000Z

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Semiconductor nanowires for photovoltaic and photoelectrochemical energy conversion  

Science Journals Connector (OSTI)

Semiconductor nanowires (NW) possess several beneficial properties for efficient conversion of solar energy into electricity and chemical energy. Due to their efficient absorption of light, short distances for...

Neil P. Dasgupta; Peidong Yang

2014-06-01T23:59:59.000Z

202

Method of transferring a thin crystalline semiconductor layer  

DOE Patents [OSTI]

A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

Nastasi, Michael A. (Sante Fe, NM); Shao, Lin (Los Alamos, NM); Theodore, N. David (Mesa, AZ)

2006-12-26T23:59:59.000Z

203

Multiplex Chaos Synchronization in Semiconductor Lasers with Multiple Optoelectronic Feedbacks  

E-Print Network [OSTI]

Secure chaos based multiplex communication system scheme is proposed utilizing globally coupled semiconductor lasers with multiple variable time delay optoelectronic feedbacks.

E. M. Shahverdiev; K. A. Shore

2011-11-06T23:59:59.000Z

204

Peltier cooling stage utilizing a superconductor-semiconductor junction  

SciTech Connect (OSTI)

This paper describes a Peltier cooling stack. It comprises: a first electrode; a superconducting layer electrically coupled to the first electrode; a semiconducting layer electrically coupled to the superconducting layer; and a second superconducting layer electrically coupled to the semiconductor layer; and a second electrode electrically coupled to the second superconducting layer, electrons flowing under an applied voltage from the first electrode through the first superconducting layer, semiconductor layer, second superconducting layer and second electrode, the electrical junction between the first superconducting layer and semiconductor providing Peltier cooling while the electrical junction between the semiconductor layer and the second superconducting layer providing Peltier heating, whereby a cryogenic Peltier cooling stack is provided.

Skertic, M.M.

1991-04-09T23:59:59.000Z

205

Holey Germanium - New Routes to Ordered Nanoporous Semiconductors  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

currently exploring a variety of applications for these materials, including nanoscale solar cells and adsorption based chemical sensors. Because the semiconductor surface is...

206

Coherence length tunable semiconductor laser with optical feedback  

Science Journals Connector (OSTI)

We report the experimental results to continuously tune the coherence length of a semiconductor laser using an optical feedback scheme. The coherence length can be controlled by...

Wang, Yuncai; Kong, Lingqin; Wang, Anbang; Fan, Linlin

2009-01-01T23:59:59.000Z

207

Organic Semiconductor Chemistry | MIT-Harvard Center for Excitonics  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Organic Semiconductor Chemistry December 13, 2012 at 3pm36-428 Seth Marder Department of ChemistryBiochemistry, Director, Center for Organic Photonics and Electronics, Georgia...

208

Exchange Coupling in the Ferromagnetic Semiconductor GaMnAs.  

E-Print Network [OSTI]

?? The study of ferromagnetic semiconductors (FMS) continues to be of great interest because of their potential for spintronic devices. While there has been much (more)

Leiner, Jonathan Carl

2012-01-01T23:59:59.000Z

209

Photons, Electrons and Holes: Fundamentals of Photocatalysis with Semiconductors  

Science Journals Connector (OSTI)

Although not all the heterogeneous photocatalysts are semiconductors, this type of solids represents, by far, the most representative and widely investigated photoactive materials. For that reason, the fundamentals

Juan Manuel Coronado

2013-01-01T23:59:59.000Z

210

Exchange interaction studies in magnetic semiconductors by neutron scattering.  

E-Print Network [OSTI]

??Theories predict that making a dilute magnetic semiconductor strongly p -type would allow it to remain ferromagnetic at room temperature. This is of intrest as (more)

Wiren, Zachary Quincy

2008-01-01T23:59:59.000Z

211

Multi-Instanton Measure from Recursion Relations in N = 2 Supersymmetric Yang-Mills Theory  

Science Journals Connector (OSTI)

By using the recursion relations found in the framework of N = 2 Super Yang-Mills theory with gauge group SU(2), we reconstruct the structure of the instanton moduli space and its volume form for all winding numbers.

Marco Matone

2001-01-01T23:59:59.000Z

212

A Language for Automatically Enforcing Privacy Policies Jean Yang Kuat Yessenov Armando Solar-Lezama  

E-Print Network [OSTI]

A Language for Automatically Enforcing Privacy Policies Jean Yang Kuat Yessenov Armando Solar adherence to privacy policies. The programming model has two components: 1) core programs describing. The pro- gramming model has two components: a core program rep

213

High power semiconductor laser diode arrays  

Science Journals Connector (OSTI)

The cw optical power obtainable from semiconductor laser diodes has been extended to unprecedented levels in recent years through the use of multistripe arrays. By spreading out the optical power with more than 100 stripes single?facet cw output in exces of 5 Watts has been demonstrated and 500 mW cw is now commercially available. Recent improvements to array performance include: arrays up to 1 cm wide that generates quasi?cw (150 usec pulse) output in excesss of 11 Watts and a novel device structure which produces up to 215 mW cw in a single diffraction limited lobe.

Peter S. Cross

1986-01-01T23:59:59.000Z

214

High power semiconductor laser diode arrays  

SciTech Connect (OSTI)

The cw optical power obtainable from semiconductor laser diodes has been extended to unprecedented levels in recent years through the use of multistripe arrays. By spreading out the optical power with more than 100 stripes, single-facet, cw output in exces of 5 Watts has been demonstrated, and 500 mW cw is now commercially available. Recent improvements to array performance include: arrays up to 1 cm wide that generates quasi-cw (150 usec pulse) output in excesss of 11 Watts, and a novel device structure which produces up to 215 mW cw in a single diffraction limited lobe.

Cross, P.S.

1986-08-15T23:59:59.000Z

215

Reusing rinse wastewater at a semiconductor plant  

SciTech Connect (OSTI)

Two pilot rinse wastewater reuse projects were developed as part of a long-term water conservation program for a Motorola semiconductor manufacturing site in Phoenix, Ariz. The conceptual designs for the projects grew out of a detailed wastewater reuse study that characterized wastewater streams at their generation points. Both treatment techniques were specifically researched, bench-tested, and adapted to further water conservation efforts while ensuring 100 percent compliance with appropriate effluent regulations and industrial discharge permit conditions. Together, the pilot projects save the city of Phoenix approximately 45 mil gal (17 {times} 10{sup 4} m{sup 3}) of water annually.

Shah, A.R. [Motorola SCG, McDowell, MD (United States). Environmental, Safety, and Industrial Hygiene Dept.; Ploeser, J.H. [Phoenix Water Services Dept., AZ (United States). Water Conservation Office

1999-08-01T23:59:59.000Z

216

Transient Rayleigh scattering from single semiconductor nanowires  

SciTech Connect (OSTI)

Transient Rayleigh scattering spectroscopy is a new pump-probe technique to study the dynamics and cooling of photo-excited carriers in single semiconductor nanowires. By studying the evolution of the transient Rayleigh spectrum in time after excitation, one can measure the time evolution of the density and temperature of photo-excited electron-hole plasma (EHP) as they equilibrate with lattice. This provides detailed information of dynamics and cooling of carriers including linear and bimolecular recombination properties, carrier transport characteristics, and the energy-loss rate of hot electron-hole plasma through the emission of LO and acoustic phonons.

Montazeri, Mohammad; Jackson, Howard E.; Smith, Leigh M. [Department of Physics, University of Cincinnati, Cincinnati, OH 45221-0011 (United States); Yarrison-Rice, Jan M. [Department of Physics, Miami University, Oxford, OH 45056 (United States); Kang, Jung-Hyun; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia)

2013-12-04T23:59:59.000Z

217

Silicon metal-semiconductor-metal photodetector  

DOE Patents [OSTI]

Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

Brueck, Steven R. J. (Albuquerque, NM); Myers, David R. (Albuquerque, NM); Sharma, Ashwani K. (Albuquerque, NM)

1997-01-01T23:59:59.000Z

218

Silicon metal-semiconductor-metal photodetector  

DOE Patents [OSTI]

Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

Brueck, Steven R. J. (Albuquerque, NM); Myers, David R. (Albuquerque, NM); Sharma, Ashwani K. (Albuquerque, NM)

1995-01-01T23:59:59.000Z

219

Design Enablement and Design-Centric Assessment of Future Semiconductor Technologies  

E-Print Network [OSTI]

ITRa] International Technology Roadmap for Semiconductors,ITRb] International Technology Roadmap for Semiconductors,val- ues from ITRS technology roadmap [ITRb] and typical

Abou Ghaida, Rani

2012-01-01T23:59:59.000Z

220

On a mathematical model for hot carrier injection in semiconductors  

E-Print Network [OSTI]

On a mathematical model for hot carrier injection in semiconductors Naoufel Ben Abdallah (1) Pierre of a semiconductor device heavily depends on the injection mechanism of carriers into the active regions through by the relation V bi = U th log N + N \\Gamma ; where U th = kBT=q is the thermal voltage and N + ; N \\Gamma

Schmeiser, Christian

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Magnetically and electrically tunable semiconductor quantum waveguide inverter  

E-Print Network [OSTI]

Magnetically and electrically tunable semiconductor quantum waveguide inverter M. J. Gilbert,a) R implementations. We present an electrically tunable semiconductor quantum waveguide implementation of an inverter. On the other hand, if a ``0'' is present in the control bit, then the qubit is inverted. In a recent study

Gilbert, Matthew

222

Semiconductors 4-bit I2C LED dimmer  

E-Print Network [OSTI]

Philips Semiconductors PCA9533 4-bit I2C LED dimmer Product data sheet Supersedes data of 2003 Sep 19 2004 Oct 01 INTEGRATED CIRCUITS #12;Philips Semiconductors Product data sheet PCA95334-bit I2C LED dimmer 22004 Oct 01 FEATURES · 4 LED drivers (on, off, flashing at a programmable rate) · 2 selectable

Berns, Hans-Gerd

223

Communication using Synchronization of Chaos in Semiconductor Lasers with optoelectronic  

E-Print Network [OSTI]

Communication using Synchronization of Chaos in Semiconductor Lasers with optoelectronic feedback S. The Chaos in the single-mode semiconductor lasers is generated by means of an optoelectronic feedback with optoelectronic feedback has been demonstrated for quite slow data rates by using chaotic wavelength fluctuations

Illing, Lucas

224

Multistability in a semiconductor laser with optoelectronic feedback  

E-Print Network [OSTI]

Multistability in a semiconductor laser with optoelectronic feedback Guang-Qiong Xia1,2 , Sze with delayed optoelectronic feedback is observed experimentally. For a given delay time, the observed dynamical-oscillating semiconductor lasers subject to delayed optoelectronic mutual coupling," Phys. Rev. E 73, 047201-1-4 (2006) 8. G

Chan, Sze-Chun

225

Photonic switching devices based on semiconductor nanostructures  

E-Print Network [OSTI]

Focusing and guiding light into semiconductor nanostructures can deliver revolutionary concepts for photonic devices, which offer a practical pathway towards next-generation power-efficient optical networks. In this review, we consider the prospects for photonic switches using semiconductor quantum dots (QDs) and photonic cavities which possess unique properties based on their low dimensionality. The optical nonlinearity of such photonic switches is theoretically analyzed by introducing the concept of a field enhancement factor. This approach reveals drastic improvement in both power-density and speed, which is able to overcome the limitations that have beset conventional photonic switches for decades. In addition, the overall power consumption is reduced due to the atom-like nature of QDs as well as the nano-scale footprint of photonic cavities. Based on this theoretical perspective, the current state-of-the-art of QD/cavity switches is reviewed in terms of various optical nonlinearity phenomena which have been utilized to demonstrate photonic switching. Emerging techniques, enabled by cavity nonlinear effects such as wavelength tuning, Purcell-factor tuning and plasmonic effects are also discussed.

Chao-Yuan Jin; Osamu Wada

2014-02-26T23:59:59.000Z

226

Coated semiconductor devices for neutron detection  

DOE Patents [OSTI]

A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and electrical settings, neutrons at specific energies can be detected. The coated neutron detector is capable of performing real-time neutron radiography in high gamma fields, digital fast neutron radiography, fissile material identification, and basic neutron detection particularly in high radiation fields.

Klann, Raymond T. (Bolingbrook, IL); McGregor, Douglas S. (Whitmore Lake, MI)

2002-01-01T23:59:59.000Z

227

Distributed Quantum Computation Architecture Using Semiconductor Nanophotonics  

E-Print Network [OSTI]

In a large-scale quantum computer, the cost of communications will dominate the performance and resource requirements, place many severe demands on the technology, and constrain the architecture. Unfortunately, fault-tolerant computers based entirely on photons with probabilistic gates, though equipped with "built-in" communication, have very large resource overheads; likewise, computers with reliable probabilistic gates between photons or quantum memories may lack sufficient communication resources in the presence of realistic optical losses. Here, we consider a compromise architecture, in which semiconductor spin qubits are coupled by bright laser pulses through nanophotonic waveguides and cavities using a combination of frequent probabilistic and sparse determinstic entanglement mechanisms. The large photonic resource requirements incurred by the use of probabilistic gates for quantum communication are mitigated in part by the potential high-speed operation of the semiconductor nanophotonic hardware. The system employs topological cluster-state quantum error correction for achieving fault-tolerance. Our results suggest that such an architecture/technology combination has the potential to scale to a system capable of attacking classically intractable computational problems.

Rodney Van Meter; Thaddeus D. Ladd; Austin G. Fowler; Yoshihisa Yamamoto

2009-09-17T23:59:59.000Z

228

Control of coherence resonance in semiconductor superlattices  

E-Print Network [OSTI]

We study the effect of time-delayed feedback control and Gaussian white noise on the spatio-temporal charge dynamics in a semiconductor superlattice. The system is prepared in a regime where the deterministic dynamics is close to a global bifurcation, namely a saddle-node bifurcation on a limit cycle ({\\it SNIPER}). In the absence of control, noise can induce electron charge front motion through the entire device, and coherence resonance is observed. We show that with appropriate selection of the time-delayed feedback parameters the effect of coherence resonance can either be enhanced or destroyed, and the coherence of stochastic domain motion at low noise intensity is dramatically increased. Additionally, the purely delay-induced dynamics in the system is investigated, and a homoclinic bifurcation of a limit cycle is found.

Johanne Hizanidis; Eckehard Schoell

2008-09-01T23:59:59.000Z

229

Hybrid Semiconductors for Hardier Electronics and Optoelectronics? |  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Unveiling the Molecular Structure of the Target of Many Drugs Unveiling the Molecular Structure of the Target of Many Drugs A New Scenario for First Life on Earth Surface Orbital 'Roughness' in Colossal Magnetoresistive Oxide Different Roads Toward Quantum Criticality Orbital Reconstruction at a Complex Oxide Interface Science Highlights Archives: 2013 | 2012 | 2011 | 2010 2009 | 2008 | 2007 | 2006 2005 | 2004 | 2003 | 2002 2001 | 2000 | 1998 | Subscribe to APS Science Highlights rss feed Hybrid Semiconductors for Hardier Electronics and Optoelectronics? DECEMBER 21, 2007 Bookmark and Share The crystal structure of β-ZnTe(en)0:5, determined by single-crystal x-ray diffraction. Two-monolayerthick ZnTe slabs are interconnected by ethylenediamine (C2N2H8) molecules bonded to zinc atoms. Zn-Green, Te-Red, N-Blue,and C-Gray. Hydrogen atoms are omitted for clarity.

230

Large-area semiconductor detectors of beta radiation  

SciTech Connect (OSTI)

This paper describes silicon semiconductor detectors with a diameter of 90 mm with hole-type conduction. The detectors had been grown with the Czochralski technique and had a specific resistivity lambda - 12 omega /SUP ./ cm and a carrier lifetime tau = 50 usec. In the case of semiconductor detectors for counting, silicon grown from a melt has its advantages because the distribution of the specific resistivity in low-resistivity semiconductor crystals is more homogeneous than in high-resistivity crystals in both longitudinal and transverse direactions relative to the axis of crystal growth.

Azimov, S.A.; Baizakov, B.B.; Karpov, V.S.; Muminov, R.A.

1986-08-01T23:59:59.000Z

231

Lee-Yang zero distribution of high temperature QCD and Roberge-Weiss phase transition  

E-Print Network [OSTI]

Canonical partition functions and Lee-Yang zeros of QCD at finite density and high temperature are studied. We present analytic derivation of the canonical partition functions and Lee-Yang zeros based on the free energy in the Stefan-Boltzmann limit using a saddle point approximation. We also perform lattice QCD simulation in a canonical approach using the fugacity expansion of the fermion determinant, and carefully examine its reliability. By comparing the analytic and numerical results, we conclude that the canonical partition functions follow the Gaussian distribution of the baryon number, and the accumulation of Lee-Yang zeros of these canonical partition functions exhibit the first order Roberge-Weiss phase transition. We discuss the validity and applicable range of the result, and its implications both for theoretical and experimental studies.

Nagata, Keitaro; Nakamura, Atsushi; Nishigaki, Shinsuke M

2014-01-01T23:59:59.000Z

232

Lee-Yang zero distribution of high temperature QCD and Roberge-Weiss phase transition  

E-Print Network [OSTI]

Canonical partition functions and Lee-Yang zeros of QCD at finite density and high temperature are studied. We present analytic derivation of the canonical partition functions and Lee-Yang zeros based on the free energy in the Stefan-Boltzmann limit using a saddle point approximation. We also perform lattice QCD simulation in a canonical approach using the fugacity expansion of the fermion determinant, and carefully examine its reliability. By comparing the analytic and numerical results, we conclude that the canonical partition functions follow the Gaussian distribution of the baryon number, and the accumulation of Lee-Yang zeros of these canonical partition functions exhibit the first order Roberge-Weiss phase transition. We discuss the validity and applicable range of the result, and its implications both for theoretical and experimental studies.

Keitaro Nagata; Kouji Kashiwa; Atsushi Nakamura; Shinsuke M. Nishigaki

2014-10-03T23:59:59.000Z

233

Varian Semiconductor Equipment Associates Inc VSEA | Open Energy  

Open Energy Info (EERE)

Varian Semiconductor Equipment Associates Inc VSEA Varian Semiconductor Equipment Associates Inc VSEA Jump to: navigation, search Name Varian Semiconductor Equipment Associates Inc (VSEA) Place Gloucester, Massachusetts Zip 1930 Sector Services Product Massachusetts-based, designs, manufactures, and services semiconductor processing equipment used in the fabrication of integrated circuits. Coordinates 37.413962°, -76.526305° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.413962,"lon":-76.526305,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

234

Ramgraber Semiconductor Equipment GmbH | Open Energy Information  

Open Energy Info (EERE)

Ramgraber Semiconductor Equipment GmbH Ramgraber Semiconductor Equipment GmbH Jump to: navigation, search Name Ramgraber Semiconductor Equipment GmbH Place Brunnthal, Germany Zip 85649 Sector Solar Product Makes semiconductor processing equipment, including solar cell manufacturing lines. Coordinates 48.006898°, 11.684687° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":48.006898,"lon":11.684687,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

235

Argonne licenses diamond semiconductor discoveries to AKHAN Technologies |  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

licenses diamond semiconductor discoveries to AKHAN Technologies licenses diamond semiconductor discoveries to AKHAN Technologies By Joseph Bernstein * By Jared Sagoff * March 4, 2013 Tweet EmailPrint LEMONT, Ill. - The U.S. Department of Energy's Argonne National Laboratory announced today that the laboratory has granted AKHAN Technologies exclusive diamond semiconductor application licensing rights to breakthrough low-temperature diamond deposition technology developed by Argonne's Center for Nanoscale Materials (CNM). The Argonne-developed technology allows for the deposition of nanocrystalline diamond on a variety of wafer substrate materials at temperatures as low as 400 degrees Celsius. The combination of the Argonne's low-temperature diamond technology with AKHAN's Miraj Diamond(tm) process represents the state of the art in diamond semiconductor

236

Printable semiconductor structures and related methods of making and assembling  

DOE Patents [OSTI]

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang; , Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

2013-03-12T23:59:59.000Z

237

Printable semiconductor structures and related methods of making and assembling  

DOE Patents [OSTI]

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Urbana, IL); Lee, Keon Jae (Tokyo, JP); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Westmont, IL); Meitl, Matthew (Champaign, IL); Zhu, Zhengtao (Rapid City, SD); Ko, Heung Cho (Urbana, IL); Mack, Shawn (Goleta, CA)

2010-09-21T23:59:59.000Z

238

Printable semiconductor structures and related methods of making and assembling  

DOE Patents [OSTI]

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Durham, NC); Lee, Keon Jae (Tokyo, JP); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Westmont, IL); Meitl, Matthew (Raleigh, NC); Zhu, Zhengtao (Rapid City, SD); Ko, Heung Cho (Urbana, IL); Mack, Shawn (Goleta, CA)

2011-10-18T23:59:59.000Z

239

Generating dispatching rules for semiconductor manufacturing to minimize weighted tardiness  

Science Journals Connector (OSTI)

Dispatching rules play an important role especially in semiconductor manufacturing scheduling, because these fabrication facilities are characterized by high complexity and dynamics. The process of developing and adapting dispatching rules is currently ...

Christoph Pickardt; Jrgen Branke; Torsten Hildebrandt; Jens Heger; Bernd Scholz-Reiter

2010-12-01T23:59:59.000Z

240

Semiconductor Laser Lidar Wind Velocity Sensor for Turbine Control  

Science Journals Connector (OSTI)

A dual line-of-sight CW lidar that measures both wind speed and direction is presented. The wind lidar employs a semiconductor laser, which allows for inexpensive remote sensors geared...

Rodrigo, Peter John; Hu, Qi; Pedersen, Christian

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Review of the Semiconductor Industry and Technology Roadmap  

Science Journals Connector (OSTI)

The semiconductor industry operates in a constant state of deflation. It is vital to our survival and progress in this knowledge era. The industry is extremely competitive and requires ongoing technological advan...

Sameer Kumar; Nicole Krenner

2002-09-01T23:59:59.000Z

242

Translating semiconductor device physics into nanoparticle films for electronic applications  

E-Print Network [OSTI]

This thesis explores and quantifies some of the important device physics, parameters, and mechanisms of semiconductor nanocrystal quantum dot (QD) electronic devices, and photovoltaic devices in particular. This involves ...

Wanger, Darcy Deborah

2014-01-01T23:59:59.000Z

243

Improving reuse of semiconductor equipment through benchmarking, standardization, and automation  

E-Print Network [OSTI]

The 6D program at Intel Corporation was set up to improve operations around capital equipment reuse, primarily in their semiconductor manufacturing facilities. The company was faced with a number of challenges, including ...

Silber, Jacob B. (Jacob Bradley)

2006-01-01T23:59:59.000Z

244

Planar graphene-narrow-gap semiconductor-graphene heterostructure  

Science Journals Connector (OSTI)

A planar heterostructure composed of two graphene films between which a narrow-gap semiconductor ... paradox is absent when conical points of the graphene Brillouin zone are in the band gap...

P. V. Ratnikov; A. P. Silin

2008-11-01T23:59:59.000Z

245

Energy Conservation Through Water Usage Reduction in the Semiconductor Industry  

E-Print Network [OSTI]

ENERGY CONSERVATION THROUGH WATER USAGE REDUCTION IN THE SEMICONDUCTOR INDUSTRY Laura Mendicino Kathy McCormack Sarah Gibson Bob Patton Dana Lyon Jeff Covington Engineer Engineer ESrn Manager Engineer Engineer Engineer Motorola Austin, TX...

Mendicino, L.; McCormack, K.; Gibson, S.; Patton, B.; Lyon, D.; Covington, J.

246

Facts and Artifacts in the Blinking Statistics of Semiconductor Nanocrystals  

Science Journals Connector (OSTI)

Since its initial discovery just over a decade ago, blinking of semiconductor nanocrystals has typically been described in terms of probability distributions for durations of bright, or on, states and dark, or off, states. These distributions are ...

Catherine H. Crouch; Orion Sauter; Xiaohua Wu; Robert Purcell; Claudia Querner; Marija Drndic; Matthew Pelton

2010-04-05T23:59:59.000Z

247

Data sheet acquired from Harris Semiconductor Buffered Inputs  

E-Print Network [OSTI]

1 Data sheet acquired from Harris Semiconductor SCHS121D Features · Buffered Inputs · Typical. The suffixes 96 and R denote tape and reel. The suffix T denotes a small-quantity reel of 250. CAUTION

Kretchmar, R. Matthew

248

Data sheet acquired from Harris Semiconductor Four Operating Modes  

E-Print Network [OSTI]

1 Data sheet acquired from Harris Semiconductor SCHS164F Features · Four Operating Modes - Shift Ld PDIP NOTE: When ordering, use the entire part number. The suffixes 96 and R denote tape and reel

Kretchmar, R. Matthew

249

Semiconductor Aspects of Organic Bulk Heterojunction Solar Cells  

Science Journals Connector (OSTI)

During the last few years organic solar cells have been discussed as a promising alternative to inorganic semiconductors for renewable energy production. These organic photovoltaic devices offer the possibility o...

Christoph J. Brabec

2003-01-01T23:59:59.000Z

250

Ultrafast nonlinear optical properties of passive and active semiconductor devices  

E-Print Network [OSTI]

Nonlinear optical properties and ultrafast carrier dynamics of slab-coupled optical waveguide amplifiers, silicon nanowaveguides, and III-V semiconductor saturable Bragg reflectors are studied. The limits imposed by two ...

Motamedi, Ali Reza

2011-01-01T23:59:59.000Z

251

Phenomenological band structure model of magnetic coupling in semiconductors  

E-Print Network [OSTI]

Phenomenological band structure model of magnetic coupling in semiconductors Gustavo M. Dalpian a,1­18]. Several models have been proposed to explain the phenomena, including the phenomenological Zener

Gong, Xingao

252

Thermally robust semiconductor optical amplifiers and laser diodes  

DOE Patents [OSTI]

A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

Dijaili, Sol P. (Moraga, CA); Patterson, Frank G. (Danville, CA); Walker, Jeffrey D. (El Cerrito, CA); Deri, Robert J. (Pleasanton, CA); Petersen, Holly (Manteca, CA); Goward, William (Antioch, CA)

2002-01-01T23:59:59.000Z

253

Catalytic photooxidation of pentachlorophenol using semiconductor nanoclusters  

SciTech Connect (OSTI)

Pentachlorophenol (PCP) is a toxic chlorinated aromatic molecule widely used as fungicide, a bactericide and a wood preservation, and thus ubiquitous in the environment. The authors report photo-oxidation of PCP using a variety of nanosize semiconductor metal oxides and sulfides in both aqueous and polar organic solvents and compare the photo-oxidation kinetics of these nanoclusters to widely studied bulk powders like Degussa P-25 TiO{sub 2} and CdS. They study both the light intensity dependence of PCP photooxidation for nanosize SnO{sub 2} and the size dependence of PCP photooxidation for both nanosize SnO{sub 2} and MoS{sub 2}. They find an extremely strong size dependence for the latter which they attribute to its size-dependent band gap and the associated change in redox potentials due to quantum confinement of the hole-electron pair. The authors show that nanosize MoS{sub 2} with a diameter of d=3.0 nm and an absorbance edge of {approximately}450 nm is a very effective photooxidation catalyst for complete PCP mineralization, even when using only visible light irradiation.

WILCOXON,JESS P.

2000-04-17T23:59:59.000Z

254

Microchannel Networks for Nanowire Patterning Benjamin Messer, Jae Hee Song, and Peidong Yang*  

E-Print Network [OSTI]

Microchannel Networks for Nanowire Patterning Benjamin Messer, Jae Hee Song, and Peidong Yang - ] nanowires on substrates using microchannel networks.5 This strategy relies on the solvent evaporation induced self-assembly of [Mo3Se3 -] infinite chains within the micro- channels. Aligned [Mo3Se3 - ] wires6

Yang, Peidong

255

YANG ET AL. VOL. 7 ' NO. 10 ' 92139222 ' 2013 www.acsnano.org  

E-Print Network [OSTI]

to the work. H arvesting biomechanical energy from human motion has attracted increasing attention in the past and as Self- Powered Active Tactile Sensor System Ya Yang,,^ Hulin Zhang,,,^ Zong-Hong Lin, Yu Sheng Zhou dec- ade for potential applications in charging portable electronic device batteries and self- powered

Wang, Zhong L.

256

The BF Formalism for Yang-Mills Theory and the `t Hooft Algebra  

E-Print Network [OSTI]

The deformation of a topological field theory, namely the pure BF theory, gives the first order formulation of Yang-Mills theory; Feynman rules are given and the standard uv-behaviour is recovered. In this formulation new non local observables can be introduced following the topological theory and giving an explicit realization of `t Hooft algebra.

Maurizio Martellini; Mauro Zeni

1996-10-13T23:59:59.000Z

257

Energy Saving Mechanisms in Sensor Networks Lan Wang and Yang Xiao  

E-Print Network [OSTI]

Energy Saving Mechanisms in Sensor Networks Lan Wang and Yang Xiao Computer Science Department try to save energy by configuring the sensors into certain topologies, therefore such mechanisms have-efficient scheduling mech- anisms". There are many other methods to save energy, such as reducing communication range

Wang, Lan

258

Genetics of caffeine consumption and responses to caffeine Amy Yang & Abraham A. Palmer & Harriet de Wit  

E-Print Network [OSTI]

REVIEW Genetics of caffeine consumption and responses to caffeine Amy Yang & Abraham A. Palmer genetics affects consumption, acute re- sponse, or the long-term effects of caffeine. Objective This paper heritability of consumption and of caffeine-related traits, including withdrawal symptoms, caffeine

Ober, Carole

259

Conditional symmetry and new classical solutions of the YangMills equations  

E-Print Network [OSTI]

.I. Fushchych Institute of Mathematics of the Academy of Sciences of Ukraine, Tereshchenkivska Str.3, 252004 Kiev, Ukraine March 15, 1999 Abstract We suggest an effective method for reducing the Yang of Sciences of Ukraine, Tereshchenkivska Str.3, 252004 Kiev, Ukraine e­mail: asrz@pta3.pt.tu­clausthal.de 1

Zhdanov, Renat

260

Insulators, long-range interactions, and genome function Jingping Yang and Victor G Corces  

E-Print Network [OSTI]

Insulators, long-range interactions, and genome function Jingping Yang and Victor G Corces Insulators are DNA­protein complexes that can mediate interactions in cis or trans between different regions together by contacts between specific insulator sites. Here we provide an overview of new evidence that has

Corces, Victor G.

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Heat transfer and friction characteristics of air flow in microtubes Chien-Yuh Yang a,  

E-Print Network [OSTI]

Heat transfer and friction characteristics of air flow in microtubes Chien-Yuh Yang a, , Chia September 2011 Keywords: Microtube Heat transfer Liquid Crystal Thermography a b s t r a c t Several researches dealing with the single-phase forced convection heat transfer inside microchannels have been

Kandlikar, Satish

262

Sensitivity Analysis of Discrete Stochastic Systems Rudiyanto Gunawan,* Yang Cao,y  

E-Print Network [OSTI]

of system behavior on the parameters that affect the process dynamics. Classical sensitivity analysis to variations in the parameters that affect the system dynamics. A large sensitivity to a parameter suggestsSensitivity Analysis of Discrete Stochastic Systems Rudiyanto Gunawan,* Yang Cao,y Linda Petzold

Cao, Yang

263

YANG ET AL. VOL. XXX ' NO. XX ' 000000 ' XXXX www.acsnano.org  

E-Print Network [OSTI]

Flexible Hybrid Energy Cell for Simultaneously Harvesting Thermal, Mechanical, and Solar Energies Ya Yang, and solar energies. This multimode energy harvesting cell has potential applications for driving micro cells can be used to con- vert solar energy into electric energy.14,15 Usually, the materials used

Wang, Zhong L.

264

Optimal Control of Offshore Indoor Climate Zhenyu Yang and Andrea Valente  

E-Print Network [OSTI]

Optimal Control of Offshore Indoor Climate Zhenyu Yang and Andrea Valente Abstract-- An optimal indoor climate control is very critical to manned offshore platforms in terms of onboard staffs' comfort limitations, offshore indoor climate control is much more challenging than any on-ground situations

Yang, Zhenyu

265

A self-powered electrochromic device driven by a nanogenerator Xiaohong Yang,ab  

E-Print Network [OSTI]

A self-powered electrochromic device driven by a nanogenerator Xiaohong Yang,ab Guang Zhu,a Sihong September 2012 DOI: 10.1039/c2ee23194h Electrochromic (EC) devices are capable of reversibly changing.3% was obtained, with electrochromic response time (ERT) and coloration efficiency (CE) of 10 seconds and 58.7 cm2

Wang, Zhong L.

266

EVALUATING THREAT ASSESSMENT FOR MULTI-STAGE CYBER ATTACKS Shanchieh Jay Yang  

E-Print Network [OSTI]

EVALUATING THREAT ASSESSMENT FOR MULTI-STAGE CYBER ATTACKS Shanchieh Jay Yang Rochester Institute on how to evaluate a threat assessment algorithm, especially for cyber security. Because of the variety and the constantly changing nature of hacker behavior and network vulnerabilities, a cyber threat assessment

Jay Yang, Shanchieh

267

CURVATURE, DIAMETER AND BOUNDED BETTI NUMBERS Zhongmin Shen and Jyh-Yang Wu  

E-Print Network [OSTI]

CURVATURE, DIAMETER AND BOUNDED BETTI NUMBERS Zhongmin Shen and Jyh-Yang Wu Abstract. In this paper, we introduces the notion of bounded Betti numbers, and show that the bounded Betti numbers words: Diameter, Ricci curvature, sectional curvature, bounded cohomology and bounded Betti number 2000

Shen, Zhongmin

268

Segmented Waves from a Spatiotemporal Transverse Wave Instability Lingfa Yang, Igal Berenstein, and Irving R. Epstein*  

E-Print Network [OSTI]

Segmented Waves from a Spatiotemporal Transverse Wave Instability Lingfa Yang, Igal Berenstein observe traveling waves emitted from Turing spots in the chlorine dioxide-iodine-malonic acid reaction. The newborn waves are continuous, but they break into segments as they propagate, and the propagation

Epstein, Irving R.

269

Ni-dispersed fullerenes: Hydrogen storage and desorption properties Weon Ho Shin and Seong Ho Yang  

E-Print Network [OSTI]

Ni-dispersed fullerenes: Hydrogen storage and desorption properties Weon Ho Shin and Seong Ho Yang could be viable alternatives to reversible hydrogen storage. It is demonstrated that a single Ni coated-dispersed fullerenes are considered to be the novel hydrogen storage media capable of storing 6.8 wt % H2, thus

Goddard III, William A.

270

Adsorption structure and doping effect of azidotrimethyltin on graphene , S.N. Yang b  

E-Print Network [OSTI]

Adsorption structure and doping effect of azidotrimethyltin on graphene J. Choi a , S.N. Yang b , K Graphene Chemical functionalization Synchrotron Photoemission spectroscopy a b s t r a c t The adsorption demonstrate the variation of characteristic of graphene induced by the chemical functionalized molecule as we

Kim, Sehun

271

Electron Transport in PEFCs Hua Meng and Chao-Yang Wang*,z  

E-Print Network [OSTI]

Electron Transport in PEFCs Hua Meng and Chao-Yang Wang*,z Electrochemical Engine Center the identical total current. © 2004 The Electrochemical Society. DOI: 10.1149/1.1641036 All rights reserved for transportation because of its high energy effi- ciency, low emission, and low noise. In the past decade

272

Temperature effect on U(VI) sorption onto Na-bentonite1 Ziqian Yang a  

E-Print Network [OSTI]

1 Temperature effect on U(VI) sorption onto Na-bentonite1 Ziqian Yang a , Lei Huang a , Zhijun Guo Nantes/Université de5 Nantes, 4 rue Alfred Kastler, BP 20722, 44307 Nantes, France6 Sorption / U(VI ) / Na-bentonite / Temperature effect / Surface complexation model7 Summary8 U(VI) sorption on a purified

Boyer, Edmond

273

Single-molecule dynamics of semiflexible Gaussian chains Shilong Yang, James B. Witkoskie, and Jianshu Caoa)  

E-Print Network [OSTI]

Single-molecule dynamics of semiflexible Gaussian chains Shilong Yang, James B. Witkoskie to determine the statistics and correlations of single-molecule fluorescence resonant energy transfer FRET the intrachain dynamics at the single-molecule level. When measured with finite time resolution

Cao, Jianshu

274

Synonymous and Nonsynonymous Rate Variation in Nuclear Genes Ziheng Yang,1,2,  

E-Print Network [OSTI]

substitutions in nuclear genes of mammals to test the neutral theory. The index of dispersion is the varianceSynonymous and Nonsynonymous Rate Variation in Nuclear Genes of Mammals Ziheng Yang,1,2, * Rasmus to estimate the synonymous and nonsynonymous substi- tution rates in 48 nuclear genes from primates, artiodac

Nielsen, Rasmus

275

Ventilation and Air Quality in Indoor Ice Skating Arenas Chunxin Yang, Ph.D.1  

E-Print Network [OSTI]

Ventilation and Air Quality in Indoor Ice Skating Arenas Chunxin Yang, Ph.D.1 Philip Demokritou, and the operation strategy of the ventilation system are significant contributing factors to the indoor air quality contamination levels in the arenas. Keywords: Air distribution, health, skating rink, indoor air quality, space

Chen, Qingyan "Yan"

276

Perturbative Ward identities for Yang-Mills field theory stochastically quantized  

Science Journals Connector (OSTI)

We compute the divergent part of the three-point vertex function of the non-Abelian Yang-Mills gauge field theory within the stochastic quantization approach to the one-loop order. This calculation allows us to find four renormalization constants which, together with the four previously obtained, verify, to the calculated order, some Ward identities.

A. Muoz Sudupe

1986-04-15T23:59:59.000Z

277

OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES  

SciTech Connect (OSTI)

This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

Grant, C D; Zhang, J Z

2007-09-28T23:59:59.000Z

278

Optoelectronic cooling of mechanical modes in a semiconductor nanomembrane  

E-Print Network [OSTI]

Optical cavity cooling of mechanical resonators has recently become a research frontier. The cooling has been realized with a metal-coated silicon microlever via photo-thermal force and subsequently with dielectric objects via radiation pressure. Here we report cavity cooling with a crystalline semiconductor membrane via a new mechanism, in which the cooling force arises from the interaction between the photo-induced electron-hole pairs and the mechanical modes through the deformation potential coupling. The optoelectronic mechanism is so efficient as to cool a mode down to 4 K from room temperature with just 50 uW of light and a cavity with a finesse of 10 consisting of a standard mirror and the sub-wavelength-thick semiconductor membrane itself. The laser-cooled narrow-band phonon bath realized with semiconductor mechanical resonators may open up a new avenue for photonics and spintronics devices.

K. Usami; A. Naesby; T. Bagci; B. Melholt Nielsen; J. Liu; S. Stobbe; P. Lodahl; E. S. Polzik

2010-11-22T23:59:59.000Z

279

Electrocoagulation: A Technology for Water Recycle and Wastewater Treatment in Semiconductor Manufacturing  

E-Print Network [OSTI]

Electrocoagulation: A Technology for Water Recycle and Wastewater Treatment in Semiconductor of treating wastewater streams in the semiconductor manufacturing industry. Electrocoagulation involves wastewater is increasing greatly. The objective is that by using EC to treat wastewater streams, this water

Fay, Noah

280

Unusual Bi-Containing Surface Layers of IIIV Compound Semiconductors  

Science Journals Connector (OSTI)

In this chapter, it is first described how the surface science and engineering of the IIIV compound semiconductors are relevant to developing the semiconductor-based materials, including bismuth (Bi) containi...

Pekka Laukkanen; Marko Punkkinen

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Semiconductor wire array structures, and solar cells and photodetectors based on such structures  

DOE Patents [OSTI]

A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

Kelzenberg, Michael D.; Atwater, Harry A.; Briggs, Ryan M.; Boettcher, Shannon W.; Lewis, Nathan S.; Petykiewicz, Jan A.

2014-08-19T23:59:59.000Z

282

E-Print Network 3.0 - active fabry-perot semiconductor Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Physics 45 The Laser DiodeThe Laser Diode Jason HillJason Hill Summary: to a Light Emitting Diode Active medium is a semiconductor pActive medium is a semiconductor p--n...

283

Thin film reactions on alloy semiconductor substrates  

SciTech Connect (OSTI)

The interactions between Pt and In{sub .53}Ga{sub .47}As have been studied. In{sub .53}Ga{sub .47}As substrates with 70nm Pt films were encapsulated in SiO{sub 2}, and annealed up to 600{degree}C in flowing forming gas. The composition and morphology of the reaction product phases were studied using x-ray diffraction, Auger depth profiling, and transmission electron microscopy. The reaction kinetics were examined with Rutherford Backscattering. Results show that Pt/In{sub .53}Ga{sub .47}As reacts to form many of the reaction products encountered in the Pt/GaAs and Pt/InP reactions: PtGa, Pt{sub 3}Ga, and PtAs{sub 2}. In addition, a ternary phase, Pt(In:Ga){sub 2}, develops, which is a solid solution between PtIn{sub 2} and PtGa{sub 2}. The amount of Ga in the ternary phase increases with annealing temperature, which causes a decrease in the lattice parameter of the phase. The reaction products show a tendency to form layered structures, especially for higher temperatures and longer annealing times. Unlike the binary case, the PtAs{sub 2}, phase is randomly oriented on the substrate, and is intermingle with a significant amount of Pt(In:Ga){sub 2}. Following Pt/In{sub .53}Ga{sub .47}As reactions, two orientation relationships between the Pt(In:Ga){sub 2} product phase and the substrate were observed, despite the large mismatch with the substrate ({approximately}8%). For many metal/compound semiconductor interactions, the reaction rate is diffusion limited, i.e. exhibits a parabolic dependence on time. An additional result of this study was the development of an In-rich layer beneath the reacted layer. The Auger depth profile showed a substantial increase in the sample at this layer. This is a significant result for the production of ohmic contacts, as the Schottky barrier height in this system lower for higher In concentrations. 216 refs.

Olson, D.A.

1990-11-01T23:59:59.000Z

284

Toward a Unified Treatment of Electronic Processes in Organic Semiconductors  

SciTech Connect (OSTI)

A quantitative study of n-type doping in highly crystalline organic semiconductor films establishes the predominant influence of electrostatic forces in these low-dielectric materials. Based on these findings, a self-consistent model of doped (purposely or not) organic semiconductors is proposed in which: (1) the equilibrium free carrier density, nf, is a small fraction of the total charge density; (2) a superlinear increase in conductivity with doping density is universal; (3) nf increases with applied electric field; and (4) the carrier mobility is field-dependent regardless of crystallinity.

Gregg. B.A.

2005-01-01T23:59:59.000Z

285

Low temperature production of large-grain polycrystalline semiconductors  

DOE Patents [OSTI]

An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

Naseem, Hameed A. (Fayetteville, AR); Albarghouti, Marwan (Loudonville, NY)

2007-04-10T23:59:59.000Z

286

Theory and Design of Smith-Purcell Semiconductor Terahertz Sources  

E-Print Network [OSTI]

-power semiconductor devices, but have also been demonstrated to be highly useful in the development of state of the art light emitting diode (LED) technology. One of the more promising LED materials, gallium nitride (GaN) comes from the three-nitride (III-N) family...-power semiconductor devices, but have also been demonstrated to be highly useful in the development of state of the art light emitting diode (LED) technology. One of the more promising LED materials, gallium nitride (GaN) comes from the three-nitride (III-N) family...

Smith, Don DeeWayne

2013-12-06T23:59:59.000Z

287

POWER SEMICONDUCTORSSTATE OF ART AND FUTURE TRENDS  

Science Journals Connector (OSTI)

The importance of effective energy conversion control including power generation from renewable and environmentally clean energy sources increases due to rising energy demand. Power electronic systems for controlling and converting electrical energy have become the workhorse of modern society in many applications both in industry and at home. Power electronics plays a very important role in traction and can be considered as brawns of robotics and automated manufacturing systems. Power semiconductor devices are the key electronic components used in power electronic systems. Advances in power semiconductor technology have improved the efficiency size weight and cost of power electronic systems.

Vitezslav Benda

2011-01-01T23:59:59.000Z

288

E-Print Network 3.0 - advanced semiconductor devices Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Northern Illinois University Collection: Engineering 39 Kompetenzzentrum fr Automobil-und Industrieelektronik Summary: of materials for these advanced semiconductor...

289

Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication  

DOE Patents [OSTI]

Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.

Sopori, Bhushan

2014-05-27T23:59:59.000Z

290

Laser Cooling of a Semiconductor by 40 Kelvin: An Optical Refrigerator Based on Cadmium Sulfide Nanoribbons  

E-Print Network [OSTI]

of semiconductors using CdS nanoribbons (or nanobelts) in this work. This net cooling effect is found: Optical refrigeration, Laser cooling of semiconductors, CdS nanobelts, anti-Stokes luminescence 1) doped crystals or glasses and direct bandgap semiconductors. Rare-earth doped materials were proposed

Xiong, Qihua

291

Streamlining the supply chain information system of the semiconductor industry using multi-XML schema  

Science Journals Connector (OSTI)

This study develops a supply chain informational infrastructure that streamlines message exchange among partners in the semiconductor industry to enhance the performance of the semiconductor industry's supply chain system, from the upstream IC design ... Keywords: XML), e-commerce, electronic commerce, extensible markup language (, metadata 1, production information management, semiconductor industry supply chain

Ruey-Shun Chen; Kung-Yung Lu; Yen-Ming Chu

2004-05-01T23:59:59.000Z

292

A High Through-put Combinatorial Growth Technique for Semiconductor Thin Film Search  

SciTech Connect (OSTI)

Conventional semiconductor material growth technique is costly and time-consuming. Here we developed a new method to growth semiconductor thin films using high through-put combinatorial technique. In this way, we have successfully fabricated tens of semiconductor libraries with high crystallinity and high product of {mu}{tau} for the purpose of radiation detection.

Ma, Z. X.; Hao, H. Y.; Xiao, P.; Oehlerking, L. J.; Liu, D. F.; Zhang, X. J.; Yu, K.-M.; Walukiewicz, W.; Mao, S. S. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Yu, P. Y. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Department of Physics, University of California, Berkeley, CA 94720 (United States)

2011-12-23T23:59:59.000Z

293

Advanced semiconductor fabrication process control using dual filter exponentially weighted moving average  

Science Journals Connector (OSTI)

Semiconductor industry needs to meet high standards to ensure survival and success in the 21st century. Rising expectations from the customers are demanding the semiconductor industry to manufacture products with both accuracy and precision. To comply ... Keywords: Dual filter EWMA, EWMA, Process control, Run-to-run, Semiconductor fabrication process

Hyo-Heon Ko; Jihyun Kim; Sang-Hoon Park; Jun-Geol Baek; Sung-Shick Kim

2012-06-01T23:59:59.000Z

294

Koopman-von Neumann Formulation of Classical Yang-Mills Theories: I  

E-Print Network [OSTI]

In this paper we present the Koopman-von Neumann (KvN) formulation of classical non-Abelian gauge field theories. In particular we shall explore the functional (or classical path integral) counterpart of the KvN method. In the quantum path integral quantization of Yang-Mills theories concepts like gauge-fixing and Faddeev-Popov determinant appear in a quite natural way. We will prove that these same objects are needed also in this classical path integral formulation for Yang-Mills theories. We shall also explore the classical path integral counterpart of the BFV formalism and build all the associated universal and gauge charges. These last are quite different from the analog quantum ones and we shall show the relation between the two. This paper lays the foundation of this formalism which, due to the many auxiliary fields present, is rather heavy. Applications to specific topics outlined in the paper will appear in later publications.

P. Carta; E. Gozzi; D. Mauro

2005-08-31T23:59:59.000Z

295

Manifestations of magnetic vortices in equation of state of Yang-Mills plasma  

E-Print Network [OSTI]

The vacuum of Yang-Mills theory contains singular stringlike objects identified with center (magnetic) vortices. Percolation of magnetic vortices is known to be responsible for the color confinement in the low-temperature phase of the theory. In our work we study properties of the vortices at finite temperature using lattice simulations of SU(2) gauge theory. We show that magnetic vortices provide a numerically large contribution to thermodynamic quantities of the gluon plasma in Yang-Mills theory. In particular, we observe that in the deconfinement phase at temperatures T_c energy-momentum tensor. In the confinement phase the vortex contribution is positive. The thermodynamical significance of the magnetic objects allows us to suggest that the quark-gluon plasma may contain a developed network of magnetic flux tubes. The existence of the vortex network may lead to observable effects in the quark-gluon plasma because the chromomagnetic field of the vortices should scatter and drag quarks.

M. N. Chernodub; Atsushi Nakamura; V. I. Zakharov

2008-07-31T23:59:59.000Z

296

Manifestations of magnetic vortices in equation of state of Yang-Mills plasma  

E-Print Network [OSTI]

The vacuum of Yang-Mills theory contains singular stringlike objects identified with center (magnetic) vortices. The percolation of the magnetic vortices is known to be responsible for the color confinement in the low-temperature phase of the theory. In our work we study properties of the vortices at finite temperature using lattice simulations of SU(2) gauge theory. We show that magnetic vortices provide numerically large contribution to thermodynamic quantities of gluon plasma in Yang-Mills theory. In particular, we observe that in the deconfinement phase at temperatures Tc energy-momentum tensor. In the confinement phase the vortex contribution is positive. The thermodynamical significance of the magnetic objects allows us to suggest that the quark gluon plasma may contain a developed network of the magnetic flux tubes. The existence of the vortex network may lead to observable eff...

Chernodub, M N; Zakharov, V I

2008-01-01T23:59:59.000Z

297

Subcritical solution of the Yang-Mills Schroedinger equation in the Coulomb gauge  

E-Print Network [OSTI]

In the Hamiltonian approach to Coulomb gauge Yang-Mills theory, the functional Schroedinger equation is solved variationally resulting in a set of coupled Dyson-Schwinger equations. These equations are solved self-consistently in the subcritical regime defined by infrared finite form factors. It is shown that the Dyson-Schwinger equation for the Coulomb form factor fails to have a solution in the critical regime where all form factors have infrared divergent power laws.

D. Epple; H. Reinhardt; W. Schleifenbaum; A. P. Szczepaniak

2007-12-21T23:59:59.000Z

298

Subcritical solution of the Yang-Mills Schroedinger equation in the Coulomb gauge  

SciTech Connect (OSTI)

In the Hamiltonian approach to Coulomb gauge Yang-Mills theory, the functional Schroedinger equation is solved variationally resulting in a set of coupled Dyson-Schwinger equations. These equations are solved self-consistently in the subcritical regime defined by infrared-finite form factors. It is shown that the Dyson-Schwinger equation for the Coulomb form factor fails to have a solution in the critical regime where all form factors have infrared divergent power laws.

Epple, D.; Reinhardt, H.; Schleifenbaum, W.; Szczepaniak, A. P. [Institut fuer Theoretische Physik, Tuebingen University, Auf der Morgenstelle 14 D-72076 Tuebingen (Germany); Physics Department and Nuclear Theory Center Indiana University, Bloomington, Indiana 47405 (United States)

2008-04-15T23:59:59.000Z

299

Shear viscosity of pure Yang-Mills theory at strong coupling  

E-Print Network [OSTI]

We calculate the shear viscosity to entropy density ratio in pure SU(N) Yang-Mills theory below the critical temperature using the strong coupling expansion. The result for the eta/s ratio for temperatures around the phase transition is 0.22 for N = 2 and 0.028N^2 for N > 2. The results are consistent with the conjectured 1/4pi lower bound inspired by the AdS/CFT correspondence.

Antal Jakovac; Daniel Nogradi

2008-10-22T23:59:59.000Z

300

Feynman rules and beta-function for the BF Yang-Mills Theory  

E-Print Network [OSTI]

Yang-Mills theory in the first order formalism appears as the deformation of a topological field theory, the pure BF theory. We discuss this formulation at the quantum level, giving the Feynman rules of the BF-YM theory, the structure of the renormalization and checking its uv-behaviour in the computation of the beta-function which agrees with the expected result.

Maurizio Martellini; Mauro Zeni

1997-02-04T23:59:59.000Z

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Universality for SU(2) Yang-Mills theory in 2+1 dimensions  

Science Journals Connector (OSTI)

A comparison is made for SU(2) Yang-Mills theory in (2+1)D between various Hamiltonian results obtained by series expansions, linked cluster expansions, and coupled cluster methods, and the recent Euclidean Monte Carlo results of Teper. A striking demonstration of universality between the Hamiltonian and Euclidean formulations is obtained, once the difference in scales between the two formulations is taken into account.

C. J. Hamer; M. Sheppeard; Zheng Weihong; D. Schtte

1996-08-01T23:59:59.000Z

302

Landau background gauge fixing and the IR properties of Yang-Mills Green functions  

Science Journals Connector (OSTI)

We analyze the complete algebraic structure of the background field method for Yang-Mills theory in the Landau gauge and show several structural simplifications within this approach. In particular, we present a new way to study the IR behavior of Green functions in the Landau gauge and show that there exists a unique Green function whose IR behavior controls the IR properties of the gluon and the ghost propagators.

Pietro A. Grassi; Tobias Hurth; Andrea Quadri

2004-11-16T23:59:59.000Z

303

Topologically massive Yang-Mills: A Hamilton-Jacobi constraint analysis  

SciTech Connect (OSTI)

We analyse the constraint structure of the topologically massive Yang-Mills theory in instant-form and null-plane dynamics via the Hamilton-Jacobi formalism. The complete set of hamiltonians that generates the dynamics of the system is obtained from the Frobenius integrability conditions, as well as its characteristic equations. As generators of canonical transformations, the hamiltonians are naturally linked to the generator of Lagrangian gauge transformations.

Bertin, M. C., E-mail: mcbertin@gmail.com [Instituto de Fsica, Universidade Federal da Bahia. Campus Universitrio de Ondina, CEP 40210-340, Salvador, BA (Brazil); Pimentel, B. M., E-mail: pimentel@ift.unesp.br [Instituto de Fsica Terica, UNESP - So Paulo State University. Caixa Postal 70532-2, 01156-970, So Paulo, SP (Brazil); Valcrcel, C. E., E-mail: carlos.valcarcel@ufabc.edu.br [CMCC, Universidade Federal do ABC. Rua Santa Adlia, 166, Santo Andr, SP (Brazil); Zambrano, G. E. R., E-mail: gramos@udenar.edu.co [Departamento de Fsica, Universidad de Nario. Calle 18 Cra 50, San Juan de Pasto, Nario (Colombia)] [Departamento de Fsica, Universidad de Nario. Calle 18 Cra 50, San Juan de Pasto, Nario (Colombia)

2014-04-15T23:59:59.000Z

304

Nonlinear semigroups and the Yang-Mills equations with the metallic boundary conditions  

SciTech Connect (OSTI)

A generalization of Segal`s theorem on nonlinear perturbations of semigroups is proven. The Yang-Mills equations in a spatially bounded subset of the Minkowski space are studied under the assumption of temporal gauge. It is shown that the Cauchy problem for these equations is uniquely solvable (locally in time) if the metallic boundary conditions are imposed. An a priori estimate of the second Sobolev norm of a 1-form is given. 12 refs.

Tafel, J. [Univ. of Warsaw (Poland); Sniatycki, J. [Univ. of Calgary, Alberta (Canada)

1997-11-01T23:59:59.000Z

305

Semiconductor Components Industries, LLC, 2004 July, 2004 -Rev. 13  

E-Print Network [OSTI]

© Semiconductor Components Industries, LLC, 2004 July, 2004 - Rev. 13 Publication Order Number: LM339/D 1 LM339, LM239, LM2901, LM2901V, NCV2901, MC3302 Single Supply Quad Comparators://onsemi.com TSSOP-14 DTB SUFFIX CASE 948G 1 14 #12;LM339, LM239, LM2901, LM2901V, NCV2901, MC3302 http

Ravikumar, B.

306

Electric-dipole-induced spin resonance in disordered semiconductors  

E-Print Network [OSTI]

ARTICLES Electric-dipole-induced spin resonance in disordered semiconductors MATHIAS DUCKHEIM One of the hallmarks of spintronics is the control of magnetic moments by electric fields enabled in such structures is electric-dipole-induced spin resonance (EDSR), where the radio-frequency fields driving

Loss, Daniel

307

Freescale Semiconductor Successfully Implements an Energy Management System  

Broader source: Energy.gov [DOE]

This case study describes how Freescale Semiconductor implemented projects at its Oak Hill Fab plant in Austin, Texas, that reduced annual plant-wide energy consumption by 28 million kilowatt hours (kWh) of electricity and 26,000 million British thermal units (Btu) of natural gas between 2006 and 2009, saving more than $2 million each year.

308

Optical absorption intensity of semiconductor single-wall carbon nanotubes  

E-Print Network [OSTI]

Optical absorption intensity of semiconductor single-wall carbon nanotubes Y. Oyama1 , R. Saito1. The optical absorption intensity is inversely proportional to the diameter in the unit of per carbon atom of single-wall carbon nanotubes (SWNT) synthesized by alcohol CCVD (ACCVD) method and HiPco method [1

Maruyama, Shigeo

309

Single-photon imaging in complementary metal oxide semiconductor processes  

Science Journals Connector (OSTI)

...integrated in new materials, e.g. germanium-on-silicon...implemented as an active or as passive...bias of the cathode or the anode...A review of active and passive...voltage at the cathode to follow an...semiconductor material with decreasing...region. The cathode (in this case...whereas active quenching is...

2014-01-01T23:59:59.000Z

310

Wide Bandgap Semiconductors for Power Electronics, Optoelectronics, and Advanced Communications  

E-Print Network [OSTI]

Wide Bandgap Semiconductors for Power Electronics, Optoelectronics, and Advanced Communications with material composition over a range of 0.7 to 5 eV. This factor allows them to be used for optoelectronic. Improvement in growth quality and doping of GaN is needed to improve the performance of optoelectronics

Li, Mo

311

Transition metal oxides on organic semiconductors Yongbiao Zhao a  

E-Print Network [OSTI]

semiconductors (OSs) structure has been widely used in inverted organic optoelectronic devices, including toward in simplifying the fabrication process of the organic optoelectronic devices. ? 2014 Elsevier B], have gained great attention because of their wide applications in optoelectronic devices composed

Demir, Hilmi Volkan

312

CHARACTERISATION OF SEMICONDUCTOR OPTICAL AMPLIFIERS FOR ALL-OPTICAL REGENERATION  

E-Print Network [OSTI]

electrical pumping, broad spectral range and opportunities for integration and mass production. Among these components, the semiconductor optical amplifier (SOA) with gain saturation, low optical and electrical power Various SOAs from Alcatel-Thales III-V lab were characterized in the framework of the French project FUTUR

Paris-Sud XI, Université de

313

Electronic displays using optically pumped luminescent semiconductor nanocrystals  

SciTech Connect (OSTI)

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Weiss, Shimon; Schlam, Michael C; Alivisatos, A. Paul

2014-03-25T23:59:59.000Z

314

Profiling the Thermoelectric Power of Semiconductor Junctions with  

E-Print Network [OSTI]

sources realize energy conversion between heat and electricity without the use of moving me- chanical the thermoelectric power, band struc- tures, and carrier concentrations of semiconductor junctions that constitute S is governed by local carrier statistics, SThEM allows us to profile precise elec- tronic junction locations

315

Hydrogen in compound semiconductors M. D. McCluskeya)  

E-Print Network [OSTI]

Hydrogen in compound semiconductors M. D. McCluskeya) and N. M. Johnson Xerox Palo Alto Research Center, Palo Alto, California 94304 Received 9 October 1998; accepted 18 December 1998 Hydrogen can consequence of hydrogenation is the passivation of dopant impurities, which leads to a decrease

McCluskey, Matthew

316

FLUID MECHANICS AND HEAT TRANSFER OF ELECTRON FLOW IN SEMICONDUCTORS  

E-Print Network [OSTI]

= heat, f = LO-mode, g = LO, h = LA-mode, i = negligible, j = remote heat sink 7/ 70 #12;Heat conductionFLUID MECHANICS AND HEAT TRANSFER OF ELECTRON FLOW IN SEMICONDUCTORS Mihir Sen Department · Shallow water analogy · Vorticity dynamics · Linear stability analysis · Numerical simulations of heat

Sen, Mihir

317

Semiconductor gamma radiation detectors: band structure effects in energy resolution  

E-Print Network [OSTI]

high precision and in a broad energy range, the number of created pairs N is just proportional (referred to as the pair excitation energy). For semiconductor materials the pair excitation energy becomes important in the search for materials with improved energy resolution. #12;Theoretical models used

Luryi, Serge

318

Method for altering the luminescence of a semiconductor  

DOE Patents [OSTI]

A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region. 4 figs.

Barbour, J.C.; Dimos, D.B.

1999-01-12T23:59:59.000Z

319

Semiconductor nanocrystal probes for biological applications and process for making and using such probes  

DOE Patents [OSTI]

A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

2014-01-28T23:59:59.000Z

320

Cisplatin-Induced Renal Injury Is Independently Mediated by OCT2 and p53  

Science Journals Connector (OSTI)

...References 1. de Jongh FE , van Veen RN, Veltman SJ, de Wit R, van der Burg ME, van den Bent MJ, et alWeekly high-dose...356:215-21. 32. Wei Q , Dong G, Yang T, Megyesi J, Price PM Dong Z.Activation and involvement of p53 in cisplatin-induced...

Jason A. Sprowl; Cynthia S. Lancaster; Navjotsingh Pabla; Edwin Hermann; Ashley M. Kosloske; Alice A. Gibson; Lie Li; Dorothea Zeeh; Eberhard Schlatter; Laura J. Janke; Giuliano Ciarimboli; and Alex Sparreboom

2014-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Ma, Dong and Gress QUARTERLY PROGRESS REPORT  

E-Print Network [OSTI]

and Leachability of Coal Combustion Residues in Florida Principal investigator: Lena Q. Ma- Environmental soil of this study is to determine the physical and chemical characteristics of coal combustion residues (CCR chemistry (Professor) Affiliation: Soil and Water Science Department, UF, Gainesville, FL 32611 Associate

Ma, Lena

322

Dong Kwun Kim | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

he successfully achieved NRC certification of licensing support network for the Yucca Mountain Project enabling the submittal of the Yucca Mountain Repository License...

323

Brian M. Sadler, and Min Dong  

E-Print Network [OSTI]

into data transmission [18]. Even if PAT is used for practical reasons, there remains a need for optimal-5888/04/$20.00©2004IEEE © ARTVILLE General model, design criteria, and signal processing ilot-assisted transmission (PAT) multiplexes known symbols with information bearing data. These pilot symbols and the specific multiplexing

Tong, Lang

324

Operation and performance of the ATLAS semiconductor tracker  

E-Print Network [OSTI]

The semiconductor tracker is a silicon microstrip detector forming part of the inner tracking system of the ATLAS experiment at the LHC. The operation and performance of the semiconductor tracker during the first years of LHC running are described. More than 99% of the detector modules were operational during this period, with an average intrinsic hit efficiency of (99.74 +/- 0.04)%. The evolution of the noise occupancy is discussed, and measurements of the Lorentz angle, delta-ray production and energy loss presented. The alignment of the detector is found to be stable at the few-micron level over long periods of time. Radiation damage measurements, which include the evolution of detector leakage currents, are found to be consistent with predictions and are used in the verification of radiation background simulations.

Aad, Georges; Abdallah, Jalal; Abdel Khalek, Samah; Abdinov, Ovsat; Aben, Rosemarie; Abi, Babak; Abolins, Maris; AbouZeid, Ossama; Abramowicz, Halina; Abreu, Henso; Abreu, Ricardo; Abulaiti, Yiming; Acharya, Bobby Samir; Adamczyk, Leszek; Adams, David; Adelman, Jahred; Adomeit, Stefanie; Adye, Tim; Agatonovic-Jovin, Tatjana; Aguilar-Saavedra, Juan Antonio; Agustoni, Marco; Ahlen, Steven; Ahmad, Ashfaq; Ahmadov, Faig; Aielli, Giulio; kesson, Torsten Paul Ake; Akimoto, Ginga; Akimov, Andrei; Alberghi, Gian Luigi; Albert, Justin; Albrand, Solveig; Alconada Verzini, Maria Josefina; Aleksa, Martin; Aleksandrov, Igor; Alexa, Calin; Alexander, Gideon; Alexandre, Gauthier; Alexopoulos, Theodoros; Alhroob, Muhammad; Alimonti, Gianluca; Alio, Lion; Alison, John; Allbrooke, Benedict; Allison, Lee John; Allport, Phillip; Allwood-Spiers, Sarah; Almond, John; Aloisio, Alberto; Alonso, Alejandro; Alonso, Francisco; Alpigiani, Cristiano; Altheimer, Andrew David; Alvarez Gonzalez, Barbara; Alviggi, Mariagrazia; Amako, Katsuya; Amaral Coutinho, Yara; Amelung, Christoph; Amidei, Dante; Amor Dos Santos, Susana Patricia; Amorim, Antonio; Amoroso, Simone; Amram, Nir; Amundsen, Glenn; Anastopoulos, Christos; Ancu, Lucian Stefan; Andari, Nansi; Andeen, Timothy; Anders, Christoph Falk; Anders, Gabriel; Anderson, Kelby; Andreazza, Attilio; Andrei, George Victor; Anduaga, Xabier; Angelidakis, Stylianos; Angelozzi, Ivan; Anger, Philipp; Angerami, Aaron; Anghinolfi, Francis; Anisenkov, Alexey; Anjos, Nuno; Annovi, Alberto; Antonaki, Ariadni; Antonelli, Mario; Antonov, Alexey; Antos, Jaroslav; Anulli, Fabio; Aoki, Masato; Aperio Bella, Ludovica; Apolle, Rudi; Arabidze, Giorgi; Aracena, Ignacio; Arai, Yasuo; Araque, Juan Pedro; Arce, Ayana; Arguin, Jean-Francois; Argyropoulos, Spyridon; Arik, Metin; Armbruster, Aaron James; Arnaez, Olivier; Arnal, Vanessa; Arnold, Hannah; Arslan, Ozan; Artamonov, Andrei; Artoni, Giacomo; Asai, Shoji; Asbah, Nedaa; Ashkenazi, Adi; Ask, Stefan; sman, Barbro; Asquith, Lily; Assamagan, Ketevi; Astalos, Robert; Atkinson, Markus; Atlay, Naim Bora; Auerbach, Benjamin; Augsten, Kamil; Aurousseau, Mathieu; Avolio, Giuseppe; Azuelos, Georges; Azuma, Yuya; Baak, Max; Bacci, Cesare; Bachacou, Henri; Bachas, Konstantinos; Backes, Moritz; Backhaus, Malte; Backus Mayes, John; Badescu, Elisabeta; Bagiacchi, Paolo; Bagnaia, Paolo; Bai, Yu; Bain, Travis; Baines, John; Baker, Oliver Keith; Baker, Sarah; Balek, Petr; Balli, Fabrice; Banas, Elzbieta; Banerjee, Swagato; Banfi, Danilo; Bangert, Andrea Michelle; Bannoura, Arwa A E; Bansal, Vikas; Bansil, Hardeep Singh; Barak, Liron; Baranov, Sergei; Barberio, Elisabetta Luigia; Barberis, Dario; Barbero, Marlon; Barillari, Teresa; Barisonzi, Marcello; Barklow, Timothy; Barlow, Nick; Barnett, Bruce; Barnett, Michael; Barnovska, Zuzana; Baroncelli, Antonio; Barone, Gaetano; Barr, Alan; Barreiro, Fernando; Barreiro Guimares da Costa, Joo; Bartoldus, Rainer; Barton, Adam Edward; Bartos, Pavol; Bartsch, Valeria; Bassalat, Ahmed; Basye, Austin; Bates, Richard; Batkova, Lucia; Batley, Richard; Battistin, Michele; Bauer, Florian; Bawa, Harinder Singh; Beau, Tristan; Beauchemin, Pierre-Hugues; Beccherle, Roberto; Bechtle, Philip; Beck, Hans Peter; Becker, Anne Kathrin; Becker, Sebastian; Beckingham, Matthew; Becot, Cyril; Beddall, Andrew; Beddall, Ayda; Bedikian, Sourpouhi; Bednyakov, Vadim; Bee, Christopher; Beemster, Lars; Beermann, Thomas; Begel, Michael; Behr, Katharina; Belanger-Champagne, Camille; Bell, Paul; Bell, William; Bella, Gideon; Bellagamba, Lorenzo; Bellerive, Alain; Bellomo, Massimiliano; Belloni, Alberto; Belotskiy, Konstantin; Beltramello, Olga; Benary, Odette; Benchekroun, Driss; Bendtz, Katarina; Benekos, Nektarios; Benhammou, Yan; Benhar Noccioli, Eleonora; Benitez Garcia, Jorge-Armando; Benjamin, Douglas; Bensinger, James; Benslama, Kamal; Bentvelsen, Stan; Berge, David; Bergeaas Kuutmann, Elin; Berger, Nicolas; Berghaus, Frank; Berglund, Elina; Beringer, Jrg; Bernabu, Jos; Bernard, Clare; Bernat, Pauline; Bernius, Catrin; Bernlochner, Florian Urs; Berry, Tracey; Berta, Peter; Bertella, Claudia; Bertolucci, Federico; Besana, Maria Ilaria; Besjes, Geert-Jan; Bessidskaia, Olga; Besson, Nathalie; Betancourt, Christopher; Bethke, Siegfried; Bhimji, Wahid; Bianchi, Riccardo-Maria; Bianchini, Louis; Bianco, Michele; Biebel, Otmar; Bieniek, Stephen Paul; Bierwagen, Katharina; Biesiada, Jed; Biglietti, Michela; Bilbao De Mendizabal, Javier; Bilokon, Halina; Bindi, Marcello; Binet, Sebastien; Bingul, Ahmet; Bini, Cesare; Black, Curtis; Black, James; Black, Kevin

2014-01-01T23:59:59.000Z

325

Operation and performance of the ATLAS semiconductor tracker  

E-Print Network [OSTI]

The semiconductor tracker is a silicon microstrip detector forming part of the inner tracking system of the ATLAS experiment at the LHC. The operation and performance of the semiconductor tracker during the first years of LHC running are described. More than 99% of the detector modules were operational during this period, with an average intrinsic hit efficiency of (99.74 +/- 0.04)%. The evolution of the noise occupancy is discussed, and measurements of the Lorentz angle, delta-ray production and energy loss presented. The alignment of the detector is found to be stable at the few-micron level over long periods of time. Radiation damage measurements, which include the evolution of detector leakage currents, are found to be consistent with predictions and are used in the verification of radiation background simulations.

ATLAS Collaboration

2014-04-29T23:59:59.000Z

326

Semiconductor laser devices having lateral refractive index tailoring  

DOE Patents [OSTI]

A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.

Ashby, Carol I. H. (Edgewood, NM); Hadley, G. Ronald (Alburquerque, NM); Hohimer, John P. (Albuquerque, NM); Owyoung, Adelbert (Albuquerque, NM)

1990-01-01T23:59:59.000Z

327

Hybrid high-temperature superconductor-semiconductor tunnel diode  

E-Print Network [OSTI]

We report the demonstration of hybrid high-Tc-superconductor-semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices were fabricated by our newly-developed mechanical bonding technique, resulting in high-Tc-semiconductor planar junctions acting as superconducting tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi2Sr2CaCu2O8+{\\delta} combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity - in good agreement with theoretical predictions for a d-wave superconductor-normal material junction, and similar to spectra obtained in scanning tunneling microscopy. Additional junctions are demonstrated using Bi2Sr2CaCu2O8+{\\delta} combined with graphite or Bi2Te3. Our results pave the way for new methods in unconventional superconductivity studies, novel materials and quantum technology applications.

Alex Hayat; Parisa Zareapour; Shu Yang F. Zhao; Achint Jain; Igor G. Savelyev; Marina Blumin; Zhijun Xu; Alina Yang; G. D. Gu; Harry E. Ruda; Shuang Jia; R. J. Cava; Aephraim M. Steinberg; Kenneth S. Burch

2013-01-09T23:59:59.000Z

328

Hybrid High-Temperature-SuperconductorSemiconductor Tunnel Diode  

Science Journals Connector (OSTI)

We report the demonstration of hybrid high-Tc-superconductorsemiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-Tc-superconductorsemiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi2Sr2CaCu2O8+? combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a d-wave-superconductornormal-material junction. Additional junctions are demonstrated using Bi2Sr2CaCu2O8+? combined with graphite or Bi2Te3. Our results pave the way for new methods in unconventional superconductivity studies, novel materials, and quantum technology applications.

Alex Hayat; Parisa Zareapour; Shu Yang F. Zhao; Achint Jain; Igor G. Savelyev; Marina Blumin; Zhijun Xu; Alina Yang; G. D. Gu; Harry E. Ruda; Shuang Jia; R. J. Cava; Aephraim M. Steinberg; Kenneth S. Burch

2012-12-27T23:59:59.000Z

329

First-principles simulations of exciton diffusion in organic semiconductors  

Science Journals Connector (OSTI)

Exciton diffusion is crucial for the performance of organic semiconductors in photovoltaic and solid state lighting applications. We propose a first-principles approach that can predict exciton dynamics in organic semiconductors. The method is based on time-dependent density functional theory to describe the energy and many-body wave functions of excitons. Nonadiabatic ab initio molecular dynamics is used to calculate phonon-assisted transition rates between localized exciton states. Using Monte Carlo simulations, we determine the exciton diffusion length, lifetime, diffusivity, and harvesting efficiency in poly(3-hexylthiophene) polymers at different temperatures, which agree very well with the experiments. We find that exciton diffusion is primarily determined by the density of states of low-energy excitons. A widely speculated diffusion mechanism, namely an initial downhill migration followed by thermally activated migration, is confirmed and elucidated by the simulations. Some general guidelines for designing more efficient organic solar cells are obtained from the simulations.

Xu Zhang; Zi Li; Gang Lu

2011-12-22T23:59:59.000Z

330

Semiconductor Nanocrystals-Based White Light Emitting Diodes  

SciTech Connect (OSTI)

In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid state lighting, such as white light emitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement could cut the ever-increasing energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, we highlight the recent progress in semiconductor nanocrystals-based WLEDs, compare different approaches for generating white light, and discuss the benefits and challenges of the solid state lighting technology.

Dai, Quanqin [ORNL; Hu, Michael Z. [ORNL; Duty, Chad E [ORNL

2010-01-01T23:59:59.000Z

331

Semiconductor-Nanocrystals-Based White Light-Emitting Diodes  

SciTech Connect (OSTI)

In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid-state lighting, such as white lightemitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid-state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement can cut the ever-increasing level of energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, the recent progress in semiconductor-nanocrystals-based WLEDs is highlighted, the different approaches for generating white light are compared, and the benefits and challenges of the solid-state lighting technology are discussed.

Dai, Quanqin [ORNL; Duty, Chad E [ORNL; Hu, Michael Z. [ORNL

2010-01-01T23:59:59.000Z

332

Neutron detection using boron gallium nitride semiconductor material  

SciTech Connect (OSTI)

In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to ?-rays but poor sensitivity to ?-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after ?-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

Atsumi, Katsuhiro [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Inoue, Yoku; Nakano, Takayuki, E-mail: ttnakan@ipc.shizuoka.ac.jp [Department of Electrical and Materials Science, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Mimura, Hidenori; Aoki, Toru [Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011 (Japan)

2014-03-01T23:59:59.000Z

333

Method for measuring the drift mobility in doped semiconductors  

DOE Patents [OSTI]

A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorus. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells. 10 figs.

Crandall, R.S.

1982-03-09T23:59:59.000Z

334

Imaging of semiconductors using a flying laser spot scanning system  

E-Print Network [OSTI]

be obsezved in the wavelength vs. absorption coefficient curves shown in Figure 1 for both a direct and an indirect semiconductor material (gallium-arsenide and silicon). It is only in the direct absorption and subsequent generation of a hole electron pair... in wavelength of light used to generate carriers pro- vides some contzol over the depth of the material analyzed. Long wavelength energy (- 1 micrometer) penetrates deeply into silicon, while gallium phosphide is considered almost transparent for a typical...

Richardson, Thomas William

2012-06-07T23:59:59.000Z

335

Contacts Between Metals and Between a Metal and a Semiconductor  

Science Journals Connector (OSTI)

The problem of contacts between metals and between a metal and a semiconductor is treated classically with the help of the results of wave mechanical theory of electron energy states in solids. The potential and electron density distributions in the two bodies near the contact are discussed. The bodies are assumed to be in immediate contact. The problem of a body in vacuum and the problem of two bodies separated by a gap are discussed qualitatively.

H. Y. Fan

1942-10-01T23:59:59.000Z

336

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Electronic Structure and Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print Wednesday, 29 November 2006 00:00 The possibility of using electrons' spins in addition to their charge in information technology has created much enthusiasm for a new field of electronics popularly known as "spintronics." An intensely studied approach to obtaining spin-polarized carriers for data-storage devices is the use of diluted magnetic semiconductors created by doping ions like Mn, Fe, or Co having a net spin into a semiconducting host such as GaAs, ZnO, or GaN. The interaction among these spins leads to ferromagnetic order at low temperatures, which is necessary to create spin-polarized carriers. A research team working at ALS Beamline 4.0.2 and European Synchrotron Radiation Facility Beamline ID8 made a big leap forward in clarifying the microscopic picture of magnetism and anisotropy in Mn-doped GaAs by resolving localized and hybridized d states using angle-dependent x-ray magnetic circular dichroism (XMCD) measurements.

337

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print The possibility of using electrons' spins in addition to their charge in information technology has created much enthusiasm for a new field of electronics popularly known as "spintronics." An intensely studied approach to obtaining spin-polarized carriers for data-storage devices is the use of diluted magnetic semiconductors created by doping ions like Mn, Fe, or Co having a net spin into a semiconducting host such as GaAs, ZnO, or GaN. The interaction among these spins leads to ferromagnetic order at low temperatures, which is necessary to create spin-polarized carriers. A research team working at ALS Beamline 4.0.2 and European Synchrotron Radiation Facility Beamline ID8 made a big leap forward in clarifying the microscopic picture of magnetism and anisotropy in Mn-doped GaAs by resolving localized and hybridized d states using angle-dependent x-ray magnetic circular dichroism (XMCD) measurements.

338

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print The possibility of using electrons' spins in addition to their charge in information technology has created much enthusiasm for a new field of electronics popularly known as "spintronics." An intensely studied approach to obtaining spin-polarized carriers for data-storage devices is the use of diluted magnetic semiconductors created by doping ions like Mn, Fe, or Co having a net spin into a semiconducting host such as GaAs, ZnO, or GaN. The interaction among these spins leads to ferromagnetic order at low temperatures, which is necessary to create spin-polarized carriers. A research team working at ALS Beamline 4.0.2 and European Synchrotron Radiation Facility Beamline ID8 made a big leap forward in clarifying the microscopic picture of magnetism and anisotropy in Mn-doped GaAs by resolving localized and hybridized d states using angle-dependent x-ray magnetic circular dichroism (XMCD) measurements.

339

All Exact Solutions of Non-Abelian Vortices from Yang-Mills Instantons  

E-Print Network [OSTI]

We successfully exhaust the complete set of exact solutions of non-Abelian vortices in a quiver gauge theory, that is, the S[U(N) x U(N)] gauge theory with a bi-fudamental scalar field on a hyperbolic plane with a certain curvature, from SO(3)-invariant SU(2N) Yang-Mills instanton solutions. This work provides, for the first time, exact non-Abelian vortex solutions. We establish the ADHM construction for non-Abelian vortices and identify all the moduli parameters and the complete moduli space.

Minoru Eto; Toshiaki Fujimori; Muneto Nitta; Keisuke Ohashi

2012-07-21T23:59:59.000Z

340

Nonperturbative gluon and ghost propagators for d=3 Yang-Mills theory  

Science Journals Connector (OSTI)

We study a manifestly gauge-invariant set of Schwinger-Dyson equations to determine the nonperturbative dynamics of the gluon and ghost propagators in d=3 Yang-Mills theory. The use of the well-known Schwinger mechanism, in the Landau gauge leads to the dynamical generation of a mass for the gauge boson (gluon in d=3), which, in turn, gives rise to an infrared finite gluon propagator and ghost dressing function. The propagators obtained from the numerical solution of these nonperturbative equations are in very good agreement with the results of SU(2) lattice simulations.

A. C. Aguilar; D. Binosi; J. Papavassiliou

2010-06-25T23:59:59.000Z

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341

A proposal for a manifestly gauge invariant and universal calculus in Yang-Mills theory  

Science Journals Connector (OSTI)

We uncover a method of calculation that proceeds at every step without fixing the gauge or specifying details of the regularization scheme. Results are obtained by iterated use of integration by parts and gauge invariance identities. The initial stages can even be computed diagrammatically. The method is formulated within the framework of an exact renormalization group for SU(N) Yang-Mills gauge theory, incorporating an effective cutoff through a manifest spontaneously broken SU(N|N) gauge invariance. We demonstrate the technique with a compact calculation of the one-loop beta function, achieving a manifestly universal result, and without gauge fixing, for the first time at finite N.

Stefano Arnone; Antonio Gatti; Tim R. Morris

2003-04-14T23:59:59.000Z

342

Center-symmetric dimensional reduction of hot Yang-Mills theory  

E-Print Network [OSTI]

It is expected that incorporating the center symmetry in the conventional dimensionally reduced effective theory for high-temperature SU(N) Yang-Mills theory, EQCD, will considerably extend its applicability towards the deconfinement transition. The construction of such a center-symmetric effective theory for the case of two colors is reviewed and lattice simulation results are presented. The simulations demonstrate that unlike EQCD, the new center-symmetric theory undergoes a second order confining phase transition in complete analogy with the full theory.

A. Kurkela

2008-10-30T23:59:59.000Z

343

Higher Order BLG Supersymmetry Transformations from 10-Dimensional Super Yang Mills  

E-Print Network [OSTI]

We study a Simple Route for constructing the higher order Bagger-Lambert-Gustavsson theory - both supersymmetry transformations and Lagrangian - starting from knowledge of only the $10$-dimensional Super Yang Mills Fermion Supersymmetry transformation. We are able to uniquely determine the four-derivative order corrected supersymmetry transformations, to lowest non-trivial order in Fermions, for the most general three-algebra theory. For the special case of Euclidean three-algbera, we reproduce the result presented in arXiv:$1207.1208$, with significantly less labour. In addition, we apply our method to calculate the quadratic fermion terms in the higher order BLG fermion supersymmetry transformation.

John Hall; Andrew Low

2014-03-28T23:59:59.000Z

344

Rota-Baxter operators on sl (2,C) and solutions of the classical Yang-Baxter equation  

SciTech Connect (OSTI)

We explicitly determine all Rota-Baxter operators (of weight zero) on sl (2,C) under the Cartan-Weyl basis. For the skew-symmetric operators, we give the corresponding skew-symmetric solutions of the classical Yang-Baxter equation in sl (2,C), confirming the related study by Semenov-Tian-Shansky. In general, these Rota-Baxter operators give a family of solutions of the classical Yang-Baxter equation in the six-dimensional Lie algebra sl (2,C)?{sub ad{sup *}} sl (2,C){sup *}. They also give rise to three-dimensional pre-Lie algebras which in turn yield solutions of the classical Yang-Baxter equation in other six-dimensional Lie algebras.

Pei, Jun, E-mail: peitsun@163.com [Department of Mathematics, Lanzhou University, Lanzhou, Gansu 730000 (China)] [Department of Mathematics, Lanzhou University, Lanzhou, Gansu 730000 (China); Bai, Chengming, E-mail: baicm@nankai.edu.cn [Chern Institute of Mathematics and LPMC, Nankai University, Tianjin 300071 (China)] [Chern Institute of Mathematics and LPMC, Nankai University, Tianjin 300071 (China); Guo, Li, E-mail: liguo@rutgers.edu [Department of Mathematics, Lanzhou University, Lanzhou, Gansu 730000 (China) [Department of Mathematics, Lanzhou University, Lanzhou, Gansu 730000 (China); Department of Mathematics and Computer Science, Rutgers University, Newark, New Jersey 07102 (United States)

2014-02-15T23:59:59.000Z

345

ARM - Publications: Science Team Meeting Documents: A Climatology...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Clouds and Radiative Forcing Liu, Yang University of North Dakota A Climatology of Clouds and Radiative Forcing at at the University of North Dakota Liu, Y., Dong, X. University of...

346

Charge transport mechanisms of graphene/semiconductor Schottky barriers: A theoretical and experimental study  

SciTech Connect (OSTI)

Graphene has been proposed as a material for semiconductor electronic and optoelectronic devices. Understanding the charge transport mechanisms of graphene/semiconductor Schottky barriers will be crucial for future applications. Here, we report a theoretical model to describe the transport mechanisms at the interface of graphene and semiconductors based on conventional semiconductor Schottky theory and a floating Fermi level of graphene. The contact barrier heights can be estimated through this model and be close to the values obtained from the experiments, which are lower than those of the metal/semiconductor contacts. A detailed analysis reveals that the barrier heights are as the function of the interface separations and dielectric constants, and are influenced by the interfacial states of semiconductors. Our calculations show how this behavior of lowering barrier heights arises from the Fermi level shift of graphene induced by the charge transfer owing to the unique linear electronic structure.

Zhong, Haijian; Liu, Zhenghui; Xu, Gengzhao; Shi, Lin; Fan, Yingmin; Yang, Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Xu, Ke, E-mail: kxu2006@sinano.ac.cn; Wang, Jianfeng; Ren, Guoqiang [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-01-07T23:59:59.000Z

347

Realization of Spin Gapless Semiconductors: The Heusler Compound Mn2CoAl  

Science Journals Connector (OSTI)

Recent studies have reported an interesting class of semiconductor materials that bridge the gap between semiconductors and half-metallic ferromagnets. These materials, called spin gapless semiconductors, exhibit a band gap in one of the spin channels and a zero band gap in the other and thus allow for tunable spin transport. Here, we report the first experimental verification of the spin gapless magnetic semiconductor Mn2CoAl, an inverse Heusler compound with a Curie temperature of 720K and a magnetic moment of 2?B. Below 300K, the compound exhibits nearly temperature-independent conductivity, very low, temperature-independent carrier concentration, and a vanishing Seebeck coefficient. The anomalous Hall effect is comparatively low, which is explained by the symmetry properties of the Berry curvature. Mn2CoAl is not only suitable material for room temperature semiconductor spintronics, the robust spin polarization of the spin gapless semiconductors makes it very promising material for spintronics in general.

Siham Ouardi; Gerhard H. Fecher; Claudia Felser; Jrgen Kbler

2013-03-05T23:59:59.000Z

348

$P-V$ criticality of AdS black hole in the Einstein-Maxwell-power-Yang-Mills gravity  

E-Print Network [OSTI]

We study the $P-V$ critical behaivor of N-dimensional AdS black holes in Einstein-Maxwell-power-Yang-Mills gravity. Our results show the existence of the Van der Waals like small-large black hole phase transitions when taking some special values of charges of the Maxwell and Yang-Mills (YM) fields. Further to calculate the critical exponents of the black holes at the critical point, we find that they are the same as those in the Van der Waals liquid-gas system.

Ming Zhang; Zhan-Ying Yang; De-Cheng Zou; Wei Xu; Rui-Hong Yue

2014-12-03T23:59:59.000Z

349

OR PRACTICE---R&D Project Portfolio Analysis for the Semiconductor Industry  

Science Journals Connector (OSTI)

We introduce a decision-support framework for the research and development (R&D) portfolio selection problem faced by a major U.S. semiconductor manufacturer. R&D portfolio selection is of critical importance to high-tech operations such as semiconductors ... Keywords: R&D project interdependency, R&D/project selection, multiperiod horizon, organizational studies/strategy, programming/stochastic, scenario generation, semiconductor industry

Banu Gemici-Ozkan; S. David Wu; Jeffrey T. Linderoth; Jeffry E. Moore

2010-11-01T23:59:59.000Z

350

Instanton calculus, topological field theories and N = 2 super Yang-Mills theories  

Science Journals Connector (OSTI)

The results obtained by Seiberg and Witten for N = 2 supersymmetric theories with gauge group SU(2) are in agreement with instanton computations carried out for winding numbers one and two. This suggests that the instanton saddle point saturates the non-perturbative contribution to the functional integral. A natural framework in which corrections to this approximation are absent is given by the topological field theory built out of the N = 2 Super Yang-Mills theory. After extending the standard construction of the Topological Yang-Mills theory to encompass the case of a non-vanishing vacuum expectation value for the scalar field, a BRST transformation is defined (as a supersymmetry plus a gauge variation), which on the instanton moduli space is the exterior derivative. We then show that each non-perturbative contribution to the N = 2 low-energy effective action can be written as the integral of a total derivative of a function of the instanton moduli. Only instanton configurations of zero conformal size contribute to this result.

Diego Bellisai; Francesco Fucito; Gabriele Travaglini; Alessandro Tanzini

2000-01-01T23:59:59.000Z

351

A modification of Einstein-Schrodinger theory that contains Einstein-Maxwell-Yang-Mills theory  

E-Print Network [OSTI]

The Lambda-renormalized Einstein-Schrodinger theory is a modification of the original Einstein-Schrodinger theory in which a cosmological constant term is added to the Lagrangian, and it has been shown to closely approximate Einstein-Maxwell theory. Here we generalize this theory to non-Abelian fields by letting the fields be composed of dxd Hermitian matrices. The resulting theory incorporates the U(1) and SU(d) gauge terms of Einstein-Maxwell-Yang-Mills theory, and is invariant under U(1) and SU(d) gauge transformations. The special case where symmetric fields are multiples of the identity matrix closely approximates Einstein-Maxwell-Yang-Mills theory in that the extra terms in the field equations are 10^-13 of the usual terms for worst-case fields accessible to measurement. The theory contains a symmetric metric and Hermitian vector potential, and is easily coupled to the additional fields of Weinberg-Salam theory or flipped SU(5) GUT theory. We also consider the case where symmetric fields have small traceless parts, and show how this suggests a possible dark matter candidate.

J. A. Shifflett

2008-04-11T23:59:59.000Z

352

Amplitudes in the N=4 supersymmetric Yang-Mills theory from quantum geometry of momentum space  

SciTech Connect (OSTI)

We discuss multiloop maximally helicity violating amplitudes in the N=4 supersymmetric Yang-Mills theory in terms of effective gravity in the momentum space with IR regulator branes as degrees of freedom. Kinematical invariants of external particles yield the moduli spaces of complex or Kahler structures which are the playgrounds for the Kodaira-Spencer or Kahler type gravity. We suggest fermionic representation of the loop maximally helicity violating amplitudes in the N=4 supersymmetric Yang-Mills theory assuming the identification of the IR regulator branes with Kodaira-Spencer fermions in the B model and Lagrangian branes in the A model. The two-easy mass box diagram is related to the correlator of fermionic currents on the spectral curve in the B model or hyperbolic volume in the A model and it plays the role of a building block in the whole picture. The Bern-Dixon-Smirnov-like ansatz has the interpretation as the semiclassical limit of a fermionic correlator. It is argued that fermionic representation implies a kind of integrability on the moduli spaces. We conjecture the interpretation of the reggeon degrees of freedom in terms of the open strings stretched between the IR regulator branes.

Gorsky, A. [Institute of Theoretical and Experimental Physics, B. Cheremushkinskaya 25, Moscow, 117259 (Russian Federation)

2009-12-15T23:59:59.000Z

353

Compact ultrafast semiconductor disk laser: targeting GFP based nonlinear applications in living organisms  

Science Journals Connector (OSTI)

We present a portable ultrafast Semiconductor Disk Laser (SDL) (or vertical extended cavity surface emitting laserVECSELs), to be used for nonlinear microscopy. The SDL is...

Aviles-Espinosa, Rodrigo; Filippidis, George; Hamilton, Craig; Malcolm, Graeme; Weingarten, Kurt J; Sdmeyer, Thomas; Barbarin, Yohan; Keller, Ursula; Santos, Susana I C O; Artigas, David; Loza-Alvarez, Pablo

2011-01-01T23:59:59.000Z

354

Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications  

DOE Patents [OSTI]

The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

Hui, Rongqing (Lenexa, KS); Jiang,Hong-Xing (Manhattan, KS); Lin, Jing-Yu (Manhattan, KS)

2008-03-18T23:59:59.000Z

355

Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate  

DOE Patents [OSTI]

A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.

McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN); Chisholm, Matthew F. (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

356

Comment on "Analysis of quantum coherent semiconductor quantum dot p-i-n junction photovoltaic cells"  

E-Print Network [OSTI]

This is a comment on PRL paper by A.P. Kirk "Analysis of quantum coherent semiconductor quantum dot p-i-n junction photovoltaic cells"

Scully, Marlan O

2010-01-01T23:59:59.000Z

357

Type-II quasi phase matching in periodically intermixed semiconductor superlattice waveguides  

E-Print Network [OSTI]

. Many semicon- ductors have nonlinear optical susceptibilities with values well in excess of conventional materials, such as lithium niobate. Semiconductors have an addi- tional advantage

358

E-Print Network 3.0 - average power semiconductor Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

externalexternal, and power, and power efficiencyefficiency 12;25 Optoelectronic Semiconductor... cavity light emitting diodesResonant cavity light emitting diodes...

359

E-Print Network 3.0 - active complementary metal-oxide-semiconductor...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ion-implanted p and n dopants in germanium Summary: wavelength spectrum allowing optoelectronic integra- tion to enhance complementary-metal-oxide- semiconductor... lim- its in...

360

E-Print Network 3.0 - ag-in-s ternary semiconductor Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Engineering 14 Semiconductor Materials S. K. Tewksbury Summary: and for optoelectronic devices. Optoelectronics has taken advantage of ternary and quaternary III-V...

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

E-Print Network 3.0 - atlas semiconductor tracker Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Search Powered by Explorit Topic List Advanced Search Sample search results for: atlas semiconductor tracker Page: << < 1 2 3 4 5 > >> 1 ATLAS Tracker Upgrade: Silicon Strip...

362

Cooling by adiabatic magnetization of a degenerate semiconductor in the ultra-quantum region  

Science Journals Connector (OSTI)

The possibility of using the adiabatic magnetization of a degenerate semiconductor in the ultra-quantum region for producing temperatures below 100 mK is examined.

J. -P. Jay-Gerin; A. Briggs

1981-11-01T23:59:59.000Z

363

E-Print Network 3.0 - area metal-oxide-semiconductor electron...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

inversion layer mobility Joo-Hiuk Son,a) Seongtae... measured absorption of terahertz radiation pulses by metal-oxide-semiconductor MOS inversion layers... of the...

364

Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications  

Broader source: Energy.gov [DOE]

Presentation slides from the DOE Fuel Cell Technologies Office webinar, Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications, held on October 21, 2014.

365

Development of fluorescent semi-conductor nanocrystal conjugates for in vitro and in vivo imaging applications  

E-Print Network [OSTI]

Semiconductor nanocrystals, also known as quantum dots (QDs), are promising imaging probes with characteristic optical properties: tunable bandgap from visible to infrared, narrow and symmetric emission features, broad ...

Han, Hee-Sun, Ph. D. Massachusetts Institute of Technology

2012-01-01T23:59:59.000Z

366

Expected k-coverage in wireless sensor networks Li-Hsing Yen *, Chang Wu Yu, Yang-Min Cheng  

E-Print Network [OSTI]

communications and micro-sensing MEMS technology has enabled the deployment of wireless sensor networksExpected k-coverage in wireless sensor networks Li-Hsing Yen *, Chang Wu Yu, Yang-Min Cheng 2005 Available online 24 August 2005 Abstract We are concerned with wireless sensor networks where n

Chen, Sheng-Wei

367

Prediction of Vertical Motions for Landing Operations of UAVs Xilin Yang, Hemanshu Pota, Matt Garratt and Valery Ugrinovskii  

E-Print Network [OSTI]

by the local stochastic sea states such as barometric pressure, wind speed and wave heights [1]. AlsoPrediction of Vertical Motions for Landing Operations of UAVs Xilin Yang, Hemanshu Pota, Matt vertical motions for safe landing of unmanned aerial vehicles (UAVs) during maritime operations

Pota, Himanshu Roy

368

Shear Viscosity to Entropy Density for a Black Brane in 5-dimensional Einstein-Yang-Mills Gravity  

E-Print Network [OSTI]

We calculate the ratio of shear viscosity to entropy density for a black brane of $5$-dimensional Einstein-Yang-Mills Gravity. There is a well- known conjecture that this ratio should be larger than $\\frac{1}{4\\pi}$ and we show that this bound preserves in this black brane.

Sadeghi, Mehdi

2014-01-01T23:59:59.000Z

369

Shear Viscosity to Entropy Density for a Black Brane in 5-dimensional Einstein-Yang-Mills Gravity  

E-Print Network [OSTI]

We calculate the ratio of shear viscosity to entropy density for a black brane of $5$-dimensional Einstein-Yang-Mills Gravity. There is a well- known conjecture that this ratio should be larger than $\\frac{1}{4\\pi}$ and we show that this bound preserves in this black brane.

Mehdi Sadeghi; Shahrokh Parvizi

2014-11-10T23:59:59.000Z

370

Compensation of wakefield-driven energy spread in energy recovery linacs Georg H. Hoffstaetter and Yang Hao Lau  

E-Print Network [OSTI]

and Yang Hao Lau Cornell University, Ithaca, New York 14853, USA (Received 16 May 2008; published 23 July, so that their energy is available for the acceleration of new particles. During this deceleration at a decelerating phase to recover the particles' energy. This energy is then used to accelerate new bunches

Hoffstaetter, Georg

371

Mass transport phenomena in direct methanol fuel cells T.S. Zhao*, C. Xu, R. Chen, W.W. Yang  

E-Print Network [OSTI]

Mass transport phenomena in direct methanol fuel cells T.S. Zhao*, C. Xu, R. Chen, W.W. Yang January 2009 Available online 20 February 2009 Keywords: Fuel cell Direct methanol fuel cell Mass efficient energy production has long been sought to solve energy and environmental problems. Fuel cells

Zhao, Tianshou

372

Design Information Retrieval: Improving Access to the Informal Side of Design William Wood, Maria Yang, and Mark Cutkosky  

E-Print Network [OSTI]

Design Information Retrieval: Improving Access to the Informal Side of Design William Wood, Maria Yang, and Mark Cutkosky Center for Design Research Stanford University Abstract Capturing and reusing design experience holds great potential for improving designer effectiveness. The first step toward

Yang, Maria

373

Book chapters 1. Gianluca Coletti, Daniel Macdonald and Deren Yang, Chapter 3, "Role of impurities in solar  

E-Print Network [OSTI]

Book chapters 1. Gianluca Coletti, Daniel Macdonald and Deren Yang, Chapter 3, "Role of impurities. Published by Wiley (2012). 2. Andres Cuevas, Daniel Macdonald and Ronald A. Sinton, Chapter III-1 Castañer. Published by Elsevier, Oxford (2011). Journal articles 1. Daniel Macdonald, Sieu Pheng Phang

374

Friction anisotropy at Ni,,100...,,100... interfaces: Molecular dynamics studies Yue Qi and Yang-Tse Cheng  

E-Print Network [OSTI]

Friction anisotropy at Ni,,100...?,,100... interfaces: Molecular dynamics studies Yue Qi and Yang of Technology, Pasadena, California, 91125 Received 8 March 2002; published 30 August 2002 The friction theories predict that most perfect clean incommensurate interfaces would produce no static friction

Goddard III, William A.

375

Proceedings of 2014 INFORMS Workshop on Data Mining and Analytics (DMA 2014) D. Sundaramoorthi, H. Yang, eds.  

E-Print Network [OSTI]

Proceedings of 2014 INFORMS Workshop on Data Mining and Analytics (DMA 2014) D. Sundaramoorthi, H. Yang, eds. 1 PREDICTING USER ENGAGEMENT IN ONLINE HEALTH COMMUNITIES BASED ON SOCIAL SUPPORT ACTIVITIES. Using a case study of an OHC among breast cancer survivors, we first illustrated that members' levels

Street, Nick

376

A single-phase, non-isothermal model for PEM fuel cells Hyunchul Ju, Hua Meng, Chao-Yang Wang *  

E-Print Network [OSTI]

A single-phase, non-isothermal model for PEM fuel cells Hyunchul Ju, Hua Meng, Chao-Yang Wang October 2004 Available online 8 December 2004 Abstract A proton exchange membrane (PEM) fuel cell produces a comprehensive study of thermal and water management in PEM fuel cells. Numerical simulations reveal

377

Synthesis of an optimal wastewater reuse network Y.H. Yang, H.H. Lou, Y.L. Huang*  

E-Print Network [OSTI]

Synthesis of an optimal wastewater reuse network Y.H. Yang, H.H. Lou, Y.L. Huang* Department regulated. An eective way to minimize wastewater is to design a wastewater reuse network (WWRN Wastewater minimization has been a primary concern for pollution prevention in the process and manu

Huang, Yinlun

378

Ordered zinc-vacancy induced Zn0.75Ox nanophase structure Yong Ding, Rusen Yang, Zhong Lin Wang *  

E-Print Network [OSTI]

Ordered zinc-vacancy induced Zn0.75Ox nanophase structure Yong Ding, Rusen Yang, Zhong Lin Wang induced by Zn-vacancy has been discovered to grow on wurtzite ZnO nanobelts. The superstructure grows parameters of ZnO. The superstructured phase is resulted from high-density Zn vacancies orderly distributed

Wang, Zhong L.

379

Coherent instabilities in a semiconductor laser with fast gain recovery  

E-Print Network [OSTI]

Coherent instabilities in a semiconductor laser with fast gain recovery Christine Y. Wang,1 L. Diehl,2 A. Gordon,3 C. Jirauschek,3 F. X. K?rtner,3,* A. Belyanin,4 D. Bour,5 S. Corzine,5 G. H?fler,5 M. Troccoli,2 J. Faist,6 and Federico Capasso2.... The different quantities reported on the graph were deduced from the experimental data shown in #1;a#2;. The dashed line is a least-square linear fit of the data. WANG et al. PHYSICAL REVIEW A 75, 031802#1;R#2; #1;2007#2; RAPID COMMUNICATIONS 031802...

Wang, Christine Y.; Diehl, L.; Gordon, A.; Jirauschek, C.; Kartner, F. X.; Belyanin, Alexey; Bour, D.; Corzine, S.; Hofler, G.; Troccoli, M.; Faist, J.; Capasso, Federico

2007-01-01T23:59:59.000Z

380

Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors  

E-Print Network [OSTI]

- Magnetization relaxation in ?Ga,M Jairo Sinova,1 T. Jungwirth,2,3 X. Liu,4 Y. Sasaki,4 J. K 1Department of Physics, Texas A&M Universit 2Institute of Physics ASCR, Cukrovarnick 3Department of Physics, University of Texa 4Department of Physics, University... is currently the focus of a considerable experimental16 and theoretical17 research. Spin-transfer switching has not yet been demonstrated in all-semiconductor systems, but the effect promises to have a richer phenomenology in this case because...

Sinova, Jairo; Jungwirth, T.; Liu, X.; Sasaki, Y.; Furdyna, JK; Atkinson, WA; MacDonald, AH.

2004-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Electric Field effects on quantum correlations in semiconductor quantum dots  

E-Print Network [OSTI]

We study the effect of external electric bias on the quantum correlations in the array of optically excited coupled semiconductor quantum dots. The correlations are characterized by the quantum discord and concurrence and are observed using excitonic qubits. We employ the lower bound of concurrence for thermal density matrix at different temperatures. The effect of the F\\"orster interaction on correlations will be studied. Our theoretical model detects nonvanishing quantum discord when the electric field is on while concurrence dies, ensuring the existence of nonclassical correlations as measured by the quantum discord.

S. Shojaei; M. Mahdian; R. Yousefjani

2012-05-01T23:59:59.000Z

382

Solubility of Flaws in Heavily-Doped Semiconductors  

Science Journals Connector (OSTI)

The solubility of a charged impurity in a semiconductor depends upon the Fermi level. This dependence may be understood in terms of a conceptual model in which an impurity is allowed to diffuse in a specimen containing a p-n junction, so that the Fermi level varies in respect to the band edges. If the impurity can exist in many states of charge (i.e., is a "flaw"), then the concentration of flaws with charge r times the electronic charge varies as the rth power of the hole density. Summing the concentrations for the different states of charge gives the solubility and its dependence upon hole concentration, and, hence, Fermi level.

W. Shockley and J. L. Moll

1960-09-01T23:59:59.000Z

383

Semiconductor-To-Metal Transitions in Transition-Metal Compounds  

Science Journals Connector (OSTI)

The theory presented in a previous paper is applied to the transition-metal compounds which are known to exhibit semiconductor-to-metal transitions. In particular, the predictions of the theory are compared with the experimental results of Feinleib and Paul on V2O3. Very good agreement is obtained for the magnitude of the energy gap and for its pressure and stress coefficients. The theory appears to be consistent with the available data on the other oxides of vanadium and titanium as well. Band models for all of these compounds are suggested. The effects of spin-disorder scattering and broadening, polaron formation, and non-stoichiometry are considered quantitatively.

David Adler; Julius Feinleib; Harvey Brooks; William Paul

1967-03-15T23:59:59.000Z

384

Electronic States and Optical Transitions in Bulk and Quantum Well Structures of III-V Compound Semiconductors  

E-Print Network [OSTI]

In this work we apply the methods of band structure calculation combined with self-consistent treatment of the light-matter interaction to a variety of problems in bulk semiconductors and semiconductor heterostructures as well as in new...

Cho, Yong Hee 1976-

2011-05-06T23:59:59.000Z

385

Monte-Carlo simulations of light propagation in luminescent solar concentrators based on semiconductor nanoparticles  

E-Print Network [OSTI]

wavelengths, which can be more efficiently converted to electricity by a PV cell. To achieve this, most-remission events. This is also a big advantage over conventional single material semiconductor nanopar- ticles of semiconductor-based LSCs in detail we employ Monte Carlo simulations (see Sec. II) using the measured data

Ilan, Boaz

386

Origin of the Variation of Exciton Binding Energy in Semiconductors Marc Dvorak,1  

E-Print Network [OSTI]

Origin of the Variation of Exciton Binding Energy in Semiconductors Marc Dvorak,1 Su-Huai Wei,2 Renewable Energy Laboratory, Golden, Colorado 80401, USA (Received 13 July 2012; revised manuscript received, and the exciton binding energy Eb in technologically important semiconductors varies from merely a few me

Wu, Zhigang

387

Fall-2003 PH-314 A. La Rosa I. HARNESSING ELECTRICAL CONDUCTIVITY IN SEMICONDUCTOR  

E-Print Network [OSTI]

Fall-2003 PH-314 A. La Rosa JUNCTIONS I. HARNESSING ELECTRICAL CONDUCTIVITY IN SEMICONDUCTOR of the JUNCTION V. FORWARD BIAS, REVERSE BIAS I. HARNESSING ELECTRICAL CONDUCTIVITY IN SEMICONDUCTOR MATERIALS Let III. CHEMICAL POTENTIAL (FERMI LEVEL) IV. COMPARISON of CHARGE-CARRIER POPULATION at EACH SIDE

La Rosa, Andres H.

388

Semiconductors Used in Photovoltaic and Photocatalytic Devices: Assessing Fundamental Properties from DFT  

Science Journals Connector (OSTI)

Semiconductors Used in Photovoltaic and Photocatalytic Devices: Assessing Fundamental Properties from DFT ... In a dielectric environment, the electrostatic force between the electron and the hole can be approximated by the eq 1. ... Madelung, O. Semiconductors: Data Handbook, 3rd ed.; Springer: New York, 2004. ...

Tangui Le Bahers; Michel Rrat; Philippe Sautet

2014-02-28T23:59:59.000Z

389

Semiconductor sensors for the detection of uorocarbons, uorine and hydrogen uoride  

E-Print Network [OSTI]

Semiconductor sensors for the detection of ¯uorocarbons, ¯uorine and hydrogen ¯uoride W. Moritza±insulator±semiconductor structure gas sensors based on silicon or silicon carbide to different ¯uorine- containing gases was studied in the temperature range 20±5308C. Silicon based gas sensors could be used for the determination of ¯uorine

Moritz, Werner

390

Frster resonance energy transfer enhanced color-conversion using colloidal semiconductor quantum dots for solid  

E-Print Network [OSTI]

F�rster resonance energy transfer enhanced color-conversion using colloidal semiconductor quantum August 2009; published online 15 October 2009 In this paper, we present F�rster resonance energy transfer FRET -enhanced color-conversion using colloidal semiconductor quantum dot nanocrystals NCs to make

Demir, Hilmi Volkan

391

STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM OPTO SEMICONDUCTORS  

Broader source: Energy.gov (indexed) [DOE]

5 14:37 FR IPL DOE CH 630 252 2779 TO RGCP-HQ P.02/04 5 14:37 FR IPL DOE CH 630 252 2779 TO RGCP-HQ P.02/04 * * STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM OPTO SEMICONDUCTORS FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS UNDER DOE CONTRACT NO. DE-FC26-05NT42341, SUBCONTRACT QZ001; W(A)-05-017, CH-1280 The Petitioner, OSRAM Opto Semiconductor (Osram) was awarded a subcontract under this cooperative agreement for the performance of work entitled, "Scaling Up KiloLumen Solid- State Lighting Exceeding 100 LPW via Remote Phosphor." The cooperative agreement was awarded to Light Prescriptions Innovators, LLC (LPI). The purpose of the cooperative agreement is to develop a new white light emitting diode (LED) light source that emits 1000 lumens with an efficacy exceeding 100 lumens per watt (LPW). The new white LED light source will use multiple

392

Method and apparatus for thermal processing of semiconductor substrates  

DOE Patents [OSTI]

An improved apparatus and method for thermal processing of semiconductor wafers. The apparatus and method provide the temperature stability and uniformity of a conventional batch furnace as well as the processing speed and reduced time-at-temperature of a lamp-heated rapid thermal processor (RTP). Individual wafers are rapidly inserted into and withdrawn from a furnace cavity held at a nearly constant and isothermal temperature. The speeds of insertion and withdrawal are sufficiently large to limit thermal stresses and thereby reduce or prevent plastic deformation of the wafer as it enters and leaves the furnace. By processing the semiconductor wafer in a substantially isothermal cavity, the wafer temperature and spatial uniformity of the wafer temperature can be ensured by measuring and controlling only temperatures of the cavity walls. Further, peak power requirements are very small compared to lamp-heated RTPs because the cavity temperature is not cycled and the thermal mass of the cavity is relatively large. Increased speeds of insertion and/or removal may also be used with non-isothermal furnaces.

Griffiths, Stewart K. (Danville, CA); Nilson, Robert H. (Cardiss, CA); Mattson, Brad S. (Los Gatos, CA); Savas, Stephen E. (Alameda, CA)

2002-01-01T23:59:59.000Z

393

Method and apparatus for thermal processing of semiconductor substrates  

DOE Patents [OSTI]

An improved apparatus and method for thermal processing of semiconductor wafers. The apparatus and method provide the temperature stability and uniformity of a conventional batch furnace as well as the processing speed and reduced time-at-temperature of a lamp-heated rapid thermal processor (RTP). Individual wafers are rapidly inserted into and withdrawn from a furnace cavity held at a nearly constant and isothermal temperature. The speeds of insertion and withdrawal are sufficiently large to limit thermal stresses and thereby reduce or prevent plastic deformation of the wafer as it enters and leaves the furnace. By processing the semiconductor wafer in a substantially isothermal cavity, the wafer temperature and spatial uniformity of the wafer temperature can be ensured by measuring and controlling only temperatures of the cavity walls. Further, peak power requirements are very small compared to lamp-heated RTPs because the cavity temperature is not cycled and the thermal mass of the cavity is relatively large. Increased speeds of insertion and/or removal may also be used with non-isothermal furnaces.

Griffiths, Stewart K. (Danville, CA); Nilson, Robert H. (Cardiss, CA); Mattson, Brad S. (Los Gatos, CA); Savas, Stephen E. (Alameda, CA)

2000-01-01T23:59:59.000Z

394

Helicon wave excitation to produce energetic electrons for manufacturing semiconductors  

DOE Patents [OSTI]

A helicon plasma source is controlled by varying the axial magnetic field or rf power controlling the formation of the helicon wave. An energetic electron current is carried on the wave when the magnetic field is 90 G; but there is minimal energetic electron current when the magnetic field is 100 G in one particular plasma source. Similar performance can be expected from other helicon sources by properly adjusting the magnetic field and power to the particular geometry. This control for adjusting the production of energetic electrons can be used in the semiconductor and thin-film manufacture process. By applying energetic electrons to the insulator layer, such as silicon oxide, etching ions are attracted to the insulator layer and bombard the insulator layer at higher energy than areas that have not accumulated the energetic electrons. Thus, silicon and metal layers, which can neutralize the energetic electron currents will etch at a slower or non-existent rate. This procedure is especially advantageous in the multilayer semiconductor manufacturing because trenches can be formed that are in the range of 0.18-0.35 mm or less.

Molvik, Arthur W. (Livermore, CA); Ellingboe, Albert R. (Fremont, CA)

1998-01-01T23:59:59.000Z

395

Helicon wave excitation to produce energetic electrons for manufacturing semiconductors  

DOE Patents [OSTI]

A helicon plasma source is controlled by varying the axial magnetic field or rf power controlling the formation of the helicon wave. An energetic electron current is carried on the wave when the magnetic field is 90 G; but there is minimal energetic electron current when the magnetic field is 100 G in one particular plasma source. Similar performance can be expected from other helicon sources by properly adjusting the magnetic field and power to the particular geometry. This control for adjusting the production of energetic electrons can be used in the semiconductor and thin-film manufacture process. By applying energetic electrons to the insulator layer, such as silicon oxide, etching ions are attracted to the insulator layer and bombard the insulator layer at higher energy than areas that have not accumulated the energetic electrons. Thus, silicon and metal layers, which can neutralize the energetic electron currents will etch at a slower or non-existent rate. This procedure is especially advantageous in the multilayer semiconductor manufacturing because trenches can be formed that are in the range of 0.18--0.35 mm or less. 16 figs.

Molvik, A.W.; Ellingboe, A.R.

1998-10-20T23:59:59.000Z

396

Organic Semiconductors for LowCost Solar Cells  

Science Journals Connector (OSTI)

The current cost of solar electricity derived from silicon photovoltaics is about 30 to 40 cents per kilowatthour. This cost is similar to peakpower charges in California during the height of summer thus establishing a partial path to economic viability. However this competitiveness is not viable in other seasons and many other locations. This paper will discuss the basic theory and progress of a new class of photovoltaic semiconductors derived from organic polymer materials. These materials have obtained promising results with 5% conversion efficiency. In addition these materials can be manufactured relatively easily by using printing technologies and roll?to?roll coating machines similar to those used to make photographic film or newspapers. Solar cells made this way would not only be cheaper but could also be incorporated into roofing materials to reduce installation costs. Organic semiconductors can be dissolved in common solvents and sprayed or printed onto substrates so they are very promising candidates for the solar production of electricity.

Michael D. McGehee; Chiatzun Goh

2008-01-01T23:59:59.000Z

397

High-efficiency photovoltaics based on semiconductor nanostructures  

SciTech Connect (OSTI)

The objective of this project was to exploit a variety of semiconductor nanostructures, specifically semiconductor quantum wells, quantum dots, and nanowires, to achieve high power conversion efficiency in photovoltaic devices. In a thin-film device geometry, the objectives were to design, fabricate, and characterize quantum-well and quantum-dot solar cells in which scattering from metallic and/or dielectric nanostructures was employed to direct incident photons into lateral, optically confined paths within a thin (~1-3um or less) device structure. Fundamental issues concerning nonequilibrium carrier escape from quantum-confined structures, removal of thin-film devices from an epitaxial growth substrate, and coherent light trapping in thin-film photovoltaic devices were investigated. In a nanowire device geometry, the initial objectives were to engineer vertical nanowire arrays to optimize optical confinement within the nanowires, and to extend this approach to core-shell heterostructures to achieve broadspectrum absorption while maintaining high opencircuit voltages. Subsequent work extended this approach to include fabrication of nanowire photovoltaic structures on low-cost substrates.

Yu, Paul K.L. [University of California, San Diego; Yu, Edward T. [University of Texas at Austin; Wang, Deli [University of California, San Diego

2011-10-31T23:59:59.000Z

398

Lattice thermal expansion for normal tetrahedral compound semiconductors  

SciTech Connect (OSTI)

The cubic root of the deviation of the lattice thermal expansion from that of the expected value of diamond for group IV semiconductors, binary compounds of III-V and II-VI, as well as several ternary compounds from groups I-III-VI{sub 2}, II-IV-V{sub 2} and I-IV{sub 2}V{sub 3} semiconductors versus their bonding length are given straight lines. Their slopes were found to be 0.0256, 0.0210, 0.0170, 0.0259, 0.0196, and 0.02840 for the groups above, respectively. Depending on the valence electrons of the elements forming these groups, a formula was found to correlate all the values of the slopes mentioned above to that of group IV. This new formula which depends on the melting point and the bonding length as well as the number of valence electrons for the elements forming the compounds, will gives best calculated values for lattice thermal expansion for all compounds forming the groups mentioned above. An empirical relation is also found between the mean ionicity of the compounds forming the groups and their slopes mentioned above and that gave the mean ionicity for the compound CuGe{sub 2}P{sub 3} in the range of 0.442.

Omar, M.S. [Department of Physics, College of Science, University of Salahaddin, Arbil, Iraqi Kurdistan (Iraq)]. E-mail: dr_m_s_omar@yahoo.com

2007-02-15T23:59:59.000Z

399

Performance Tools Harvey Wasserman Woo-Sun Yang NERSC User Services Group  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Optimization and Optimization and Performance Tools Harvey Wasserman Woo-Sun Yang NERSC User Services Group Cray XE6 Workshop February 7-8, 2011 NERSC Oakland Scientific Facility Outline * Introduction, motivation, some terminology * Using CrayPat * Using Apprentice2 * Hands-on lab 2 Why Analyze Performance? * Improving performance on HPC systems has compelling economic and scientific rationales. - Dave Bailey: Value of improving performance of a single application, 5% of machine's cycles by 20% over 10 years: $1,500,000 - Scientific benefit probably much higher * Goal: solve problems faster; solve larger problems * Accurately state computational need * Only that which can be measured can be improved * The challenge is mapping the application to an increasingly

400

Using CrayPat Woo-Sun Yang NERSC User Services Group NUG Training  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

CrayPat CrayPat Woo-Sun Yang NERSC User Services Group NUG Training February 1-2, 2012 NERSC Oakland Scientific Facility Introduction to CrayPat * Two types of collecting code performance data - Sampling * Typically, sampling program counters (locations in the code) at specified time intervals * A few different variants exist in sampling methods * Can see how much time was spent in each function - Tracing * Focus placed on individual functions * Records performance data on entry to and exit from specified functions * More accurate about performance of the function * Need to specify which functions to trace 2 Introduction to CrayPat (cont'd) * CrayPat can perform "sampling" or "tracing" experiments - Need to build an executable accordingly

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Non-Chiral S-Matrix of N=4 Super Yang-Mills  

E-Print Network [OSTI]

We discuss the construction of non-chiral S-matrix of four-dimensional N=4 super Yang-Mills using a non-chiral superspace. This construction utilizes the non-chiral representation of dual superconformal symmetry, which is the natural representation from the point of view of the six-dimensional parent theory. The superspace in discussion is projective superspace constructed by Hatsuda and Siegel, and is based on a half coset U(2,2|4)/U(1,1|2)^2_+. We obtain the non-chiral representation of the five-point and general n-point MHV and anti-MHV amplitude. The non-chiral formulation can be straightforwardly lifted to six dimensions, which is equivalent to massive amplitudes in four dimensions.

Huang, Yu-tin

2011-01-01T23:59:59.000Z

402

Non-Chiral S-Matrix of N=4 Super Yang-Mills  

E-Print Network [OSTI]

We discuss the construction of non-chiral S-matrix of four-dimensional N=4 super Yang-Mills using a non-chiral superspace. This construction utilizes the non-chiral representation of dual superconformal symmetry, which is the natural representation from the point of view of the six-dimensional parent theory. The superspace in discussion is projective superspace constructed by Hatsuda and Siegel, and is based on a half coset U(2,2|4)/U(1,1|2)^2_+. We obtain the non-chiral representation of the five-point and general n-point MHV and anti-MHV amplitude. The non-chiral formulation can be straightforwardly lifted to six dimensions, which is equivalent to massive amplitudes in four dimensions.

Yu-tin Huang

2011-04-11T23:59:59.000Z

403

Screening masses in quenched (2+1)d Yang-Mills theory: universality from dynamics?  

E-Print Network [OSTI]

We compute the spectrum of gluonic screening-masses in the $0^{++}$ channel of quenched 3d Yang-Mills theory near the phase-transition. Our finite-temperature lattice simulations are performed at scaling region, using state-of-art techniques for thermalization and spectroscopy, which allows for thorough data extrapolations to thermodynamic limit. Ratios among mass-excitations with the same quantum numbers on the gauge theory, 2d Ising and $\\lambda\\phi^{4}$ models are compared, resulting in a nice agreement with predictions from universality. In addition, a gauge-to-scalar mapping, previously employed to fit QCD Green's functions at deep IR, is verified to dynamically describe these universal spectroscopic patterns

Rafael B. Frigori

2009-12-15T23:59:59.000Z

404

Wilson line correlators in two-dimensional noncommutative Yang-Mills theory  

Science Journals Connector (OSTI)

We study the correlator of two parallel Wilson lines in two-dimensional non-commutative Yang-Mills theory, following two different approaches. We first consider a perturbative expansion in the large-N limit and resum all planar diagrams. The second approach is non perturbative: we exploit the Morita equivalence, mapping the two open lines on the non-commutative torus (which eventually gets decompacted) in two closed Wilson loops winding around the dual commutative torus. Planarity allows us to single out a suitable region of the variables involved, where a saddle-point approximation of the general Morita expression for the correlator can be performed. In this region the correlator nicely compares with the perturbative result, exhibiting an exponential increase with respect to the momentum p.

Antonio Bassetto; Federica Vian

2002-01-01T23:59:59.000Z

405

Biquaternions and ADHM Construction of Non-Compact SL(2,C) Yang-Mills Instantons  

E-Print Network [OSTI]

We extend quaternion calculation in the ADHM construction of Sp(1) (=SU(2)) self-dual Yang-Mills (SDYM) instantons to the case of biquaternion. We use the biconjugate operation of biquaternion first introduced by Hamilton to construct the non-compact SL(2,C) SDYM instantons. The number of moduli for SL(2,C) k-instantons is found to be twice of that of Sp(1), 16k-6. These new SL(2,C) instanton solutions contain the SL(2,C) (M,N) instanton solutions constructed previously as a subset. The structure of singularities of the SL(2,C) 1-instanton field configuration with 10 moduli parameters is particularly investigated. The existence of singular structures of the non-compact SL(2,C) SDYM field configurations are mathematically consistent with recent results of the complex ADHM equations.

Lai, Sheng-Hong; Tsai, I-Hsun

2014-01-01T23:59:59.000Z

406

A Note on q-Deformed Two-Dimensional Yang-Mills and Open Topological Strings  

E-Print Network [OSTI]

In this note we make a test of the open topological string version of the OSV conjecture, proposed in hep-th/0504054, in the toric Calabi-Yau manifold $X= O(-3)\\to\\mathbf{P}^2$ with background D4-branes wrapped on Lagrangian submanifolds. The D-brane partition function reduces to an expectation value of some inserted operators of a q-deformed Yang-Mills theory living on a chain of $\\mathbf{P}^1$'s in the base $\\mathbf{P}^2$ of $X$. At large $N$ this partition function can be written as a sum over squares of chiral blocks, which are related to the open topological string amplitudes in the local $\\mathbf{P}^2$ geometry with branes at both the outer and inner edges of the toric diagram. This is in agreement with the conjecture.

Peng Zhang

2006-11-10T23:59:59.000Z

407

Topologically Massive Yang-Mills field on the Null-Plane: A Hamilton-Jacobi approach  

SciTech Connect (OSTI)

Non-abelian gauge theories are super-renormalizable in 2+1 dimensions and suffer from infrared divergences. These divergences can be avoided by adding a Chern-Simons term, i.e., building a Topologically Massive Theory. In this sense, we are interested in the study of the Topologically Massive Yang-Mills theory on the Null-Plane. Since this is a gauge theory, we need to analyze its constraint structure which is done with the Hamilton-Jacobi formalism. We are able to find the complete set of Hamiltonian densities, and build the Generalized Brackets of the theory. With the GB we obtain a set of involutive Hamiltonian densities, generators of the evolution of the system.

Bertin, M. C.; Pimentel, B. M.; Valcarcel, C. E. [Instituto de Fisica Teorica, UNESP-Sao Paulo State University, Caixa Postal 70532-2, 01156-970, Sao Paulo, SP (Brazil); Zambrano, G. E. R. [Departamento de Fisica, Universidad de Narino, Calle 18 Carrera 50, San Juan de Pasto, Narino (Colombia)

2010-11-12T23:59:59.000Z

408

On the phase diagram and the singlet scalar channel in Yang-Mills-Higgs theory  

E-Print Network [OSTI]

Yang-Mills-Higgs theory is quite a remarkable theory in that it shows very different behaviors without phase transitions. It is dominated by the Brout-Englert-Higgs mechanism in some domain of the phase diagram, while it is essentially QCD-like in another. It is expected that albeit there is no qualitative difference, there are substantially quantitative differences throughout the spectrum. This is investigated using lattice theory for the case of the scalar singlet channel for more than a hundred different points in the phase diagram. It is found that the results deviate partly substantially from the expectations in some cases, but in others justify the picture of a weakly interacting theory - even in cases of rather strong interactions at the ultraviolet cutoff.

Axel Maas; Tajdar Mufti

2014-10-29T23:59:59.000Z

409

Argonne CNM News: State-of-the-Art Diamond Semiconductor Technology  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

State-of-the-Art Diamond Semiconductor Technology Licensed to AKHAN Technologies State-of-the-Art Diamond Semiconductor Technology Licensed to AKHAN Technologies The U.S. Department of Energy's Argonne National Laboratory announced today that the laboratory has granted AKHAN Technologies, Inc., exclusive diamond semiconductor application licensing rights to breakthrough low-temperature diamond deposition technology developed by Argonne's Center for Nanoscale Materials (CNM). The method allows for the deposition of nanocrystalline diamond on a variety of wafer substrate materials at temperatures as low as 400°C, highly advantageous for integration with processed semiconductor electronic materials and resulting in the deposition of low-defect nanocrystalline diamond (NCD) thin films. The combination of CNM's low-temperature diamond technology with the AKHAN Miraj Diamond(tm) process represents the state of the art in diamond semiconductor thin-film technology.

410

Oxide Ferromagnetic Semiconductors for Spin-Electronic Transprt  

SciTech Connect (OSTI)

The objective of this research was to investigate the viability of oxide magnetic semiconductors as potential materials for spintronics. We identified some members of the solid solution series of ilmenite (FeTiO3) and hematite (Fe2O3), abbreviated as (IH) for simplicity, for our investigations based on their ferromagnetic and semiconducting properties. With this objective in focus we limited our investigations to the following members of the modified Fe-titanates: IH33 (ilmenitehematite with 33 atomic percent hematite), IH45 (ilmenite-hematite with 45 atomic percent hematite), Mn-substituted ilmenite (Mn-FeTiO3), and Mn-substituted pseudobrookite (Mn- Fe2TiO5). All of them are: 1. wide bandgap semiconductors with band gaps ranging in values between 2.5 to 3.5 eV; 2. n-type semiconductors; 3.they exhibit well defined magnetic hysteresis loops and 4. their magnetic Curie points are greater than 400K. Ceramic, film and single crystal samples were studied and based on their properties we produced varistors (also known as voltage dependent resistors) for microelectronic circuit protection from power surges, three-terminal microelectronic devices capable of generating bipolar currents, and an integrated structured device with controlled magnetic switching of spins. Eleven refereed journal papers, three refereed conference papers and three invention disclosures resulted from our investigations. We also presented invited papers in three international conferences and one national conference. Furthermore two students graduated with Ph.D. degrees, three with M.S. degrees and one with B.S. degree. Also two post-doctoral fellows were actively involved in this research. We established the radiation hardness of our devices in collaboration with a colleague in an HBCU institution, at the Cyclotron Center at Texas A&M University, and at DOE National Labs (Los Alamos and Brookhaven). It is to be appreciated that we met most of our goals and expanded vastly the scope of research by including investigations of Mn-FeTiO3, Mn-Fe2TiO5 and by producing a novel three terminal device capable of generating bipolar currents besides producing radiation resistant varistors and a magnetically switchable device. Furthermore we conclusively established the radiation hardness of the four modified iron titanates we studied. In all our publications, conference and seminar presentations, dissertations and theses sponsorship of DOE has been acknowledged

Dr. R. K. Pandey, Cudworth Endowed Professor (Professor Emeritus of The Unviersity of Alabama)

2008-11-24T23:59:59.000Z

411

Transforming the Lighting Sector with Semiconductor Lighting Technologies  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

17-TED-000924-9/27 SR#2000-2333C 17-TED-000924-9/27 SR#2000-2333C Transforming the Lighting Sector With Semiconductor Lighting Technologies Thomas Drennen Sandia National Laboratories Roland Haitz Agilent Technologies Jeffrey Tsao E20 Communications Sandia National Laboratories USAEE/IAEE Annual Meetings Philadelphia, PA September 24-27, 2000 Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy under Contract DE-AC04-94AL85000 2 6217-TED-000924-9/27 SR#2000-2333C Overview * Introduction * U.S. Lighting Demand * Evolution of LEDs * The LED Simulation Model (LEDSim) * Results 3 6217-TED-000924-9/27 SR#2000-2333C Introduction 0 50 100 150 200 1970 1980 1990 2000 2010 2020 Efficiency (lm/W) Year Incandescent Halogen Fluorescent Semi- conductor

412

System for characterizing semiconductor materials and photovoltaic devices through calibration  

DOE Patents [OSTI]

A method and apparatus for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby.

Sopori, Bhushan L. (Denver, CO); Allen, Larry C. (Arvada, CO); Marshall, Craig (Littleton, CO); Murphy, Robert C. (Golden, CO); Marshall, Todd (Littleton, CO)

1998-01-01T23:59:59.000Z

413

Scanning Hall probe microscopy of a diluted magnetic semiconductor  

SciTech Connect (OSTI)

We have measured the micromagnetic properties of a diluted magnetic semiconductor as a function of temperature and applied field with a scanning Hall probe microscope built in our laboratory. The design philosophy for this microscope and some details are described. The samples analyzed in this work are Ga{sub 0.94}Mn{sub 0.06}As films grown by molecular beam epitaxy. We find that the magnetic domains are 2-4 mum wide and fairly stable with temperature. Magnetic clusters are observed above T{sub C}, which we ascribe to MnAs defects too small and sparse to be detected by a superconducting quantum interference device magnetometer.

Kweon, Seongsoo [Materials Science and Engineering, University of Texas at Austin, Austin, Texas 78712 (United States); Samarth, Nitin [Physics Department, Penn State University, University Park, Pennsylvania 16802 (United States); Lozanne, Alex de [Materials Science and Engineering, University of Texas at Austin, Austin, Texas 78712 (United States); Department of Physics, University of Texas at Austin, Austin, Texas 78712 (United States)

2009-05-01T23:59:59.000Z

414

Experimental verification of Frster energy transfer between semiconductor quantum dots  

Science Journals Connector (OSTI)

In recent years, energy transfer (ET) using semiconductor quantum dots (QDs) is getting increased attention. However, it has been postulated that ET between QDs is based on the Frster model, which is a well-established model of ET mechanism in organic dye systems, without verification. In this work, we have investigated ET mechanism in colloidal CdS QDs measuring photoluminescence dynamics of a bilayer structure consisting of differently sized CdS QDs. In the bilayer structure, the distance between the monolayer of donor QDs and that of acceptor QDs was controlled precisely by a spacer layer that is layer-by-layer assembly of polyelectrolytes. The bilayer structure enabled us to systematically measure the spacer-layer dependence of photoluminescence dynamics reflecting the ET process between QDs. It is demonstrated that ET between the donor and acceptor QDs is conclusively dominated by the dipole-dipole interaction, which verifies the appropriateness of the Frster model.

DaeGwi Kim; Shinya Okahara; Masaaki Nakayama; YongGu Shim

2008-10-02T23:59:59.000Z

415

Semiconductor nanowires for photovoltaic and photoelectrochemical energy conversion  

SciTech Connect (OSTI)

Semiconductor nanowires (NW) possess several beneficial properties for efficient conversion of solar energy into electricity and chemical energy. Due to their efficient absorption of light, short distances for minority carriers to travel, high surface-to-volume ratios, and the availability of scalable synthesis methods, they provide a pathway to address the low cost-to-power requirements for wide-scale adaptation of solar energy conversion technologies. Here we highlight recent progress in our group towards implementation of NW components as photovoltaic and photoelectrochemical energy conversion devices. An emphasis is placed on the unique properties of these one-dimensional (1D) structures, which enable the use of abundant, low-cost materials and improved energy conversion efficiency compared to bulk devices.

Dasgupta, Neil; Yang, Peidong

2013-01-23T23:59:59.000Z

416

Recent progress in transparent oxide semiconductors: Materials and device application  

Science Journals Connector (OSTI)

This paper reviews our recent research progress on new transparent conductive oxide (TCO) materials and electronic and optoelectronic devices based on these materials. First, described are the materials including p-type materials, deep-UV transparent TCO(?-Ga2O3), epitaxially grown ITO with atomically flat surface, transparent electrochromic oxide (NbO2F), amorphous TCOs, and nanoporous semiconductor 12CaO7Al2O3. Second, presented are TCO-based electronic/optoelectronic devices realized to date, UV/blue LED and UV-sensors based on transparent pn junction and high performance transparent TFT using n-type TCO as an n-channel. Finally, unique optoelectronic properties (p-type degenerate conduction, transfer doping of carriers, RT-stable exciton, and large optical nonlinearity) originating from 2D-electronic nature in p-type layered oxychalcogenides are summarized along with the fabrication method of epitaxial thin films of these materials.

Hideo Hosono

2007-01-01T23:59:59.000Z

417

System for characterizing semiconductor materials and photovoltaic devices through calibration  

DOE Patents [OSTI]

A method and apparatus are disclosed for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby. 44 figs.

Sopori, B.L.; Allen, L.C.; Marshall, C.; Murphy, R.C.; Marshall, T.

1998-05-26T23:59:59.000Z

418

High gain photoconductive semiconductor switch having tailored doping profile zones  

DOE Patents [OSTI]

A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.

Baca, Albert G. (Albuquerque, NM); Loubriel, Guillermo M. (Albuquerque, NM); Mar, Alan (Albuquerque, NM); Zutavern, Fred J (Albuquerque, NM); Hjalmarson, Harold P. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Zipperian, Thomas E. (Edgewood, NM); O'Malley, Martin W. (Edgewood, NM); Helgeson, Wesley D. (Albuquerque, NM); Denison, Gary J. (Sandia Park, NM); Brown, Darwin J. (Albuquerque, NM); Sullivan, Charles T. (Albuquerque, NM); Hou, Hong Q. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

419

Electronic stopping?power calculations for heavy ions in semiconductors  

Science Journals Connector (OSTI)

A model for ion stopping in semiconductors which considers separate stopping contributions from valence and core electrons and explicitly includes the effect of the gap has been used to calculate the electronic stopping power of energetic B P and As in Si Ge GaAs and CdTe for projectile energies 10 keV100 MeV. Account was taken of the partially stripped incident ions by means of the effective charge. There is good agreement at low ion velocity with Lindhard and Scharffs [J. Lindhard and M. Scharff Phys. Rev. 1 2 4 128 (1961)] values which for heavy ions do not depend on effective charge theory as well as with the semiempirical curves at energies E?0.2 MeV/nucleon where they can be compared.

S. G. Elkomoss; A. Pape; S. Unamuno

1990-01-01T23:59:59.000Z

420

The silicon microstrip sensors of the ATLAS semiconductor tracker  

SciTech Connect (OSTI)

This paper describes the AC-coupled, single-sided, p-in-n silicon microstrip sensors used in the Semiconductor Tracker (SCT) of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The sensor requirements, specifications and designs are discussed, together with the qualification and quality assurance procedures adopted for their production. The measured sensor performance is presented, both initially and after irradiation to the fluence anticipated after 10 years of LHC operation. The sensors are now successfully assembled within the detecting modules of the SCT, and the SCT tracker is completed and integrated within the ATLAS Inner Detector. Hamamatsu Photonics Ltd. supplied 92.2percent of the 15,392 installed sensors, with the remainder supplied by CiS.

ATLAS SCT Collaboration; Spieler, Helmuth G.

2007-04-13T23:59:59.000Z

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Soft X-ray spectromicroscopy and its application to semiconductor microstructure characterization  

SciTech Connect (OSTI)

The universal trend towards device miniaturization has driven the semiconductor industry to develop sophisticated and complex instrumentation for the characterization of microstructures. Many significant problems of relevance to the semiconductor industry cannot be solved with conventional analysis techniques, but can be addressed with soft x-ray spectromicroscopy. An active spectromicroscopy program is being developed at the Advanced Light Source, attracting both the semiconductor industry and the materials science academic community. Examples of spectromicroscopy techniques are presented. An ALS {mu}-XPS spectromicroscopy project is discussed, involving the first microscope completely dedicated and designed for microstructure analysis on patterned silicon wafers.

Gozzo, F.; Franck, K.; Howells, M.R.; Hussain, Z. [and others

1996-05-01T23:59:59.000Z

422

Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics  

DOE Patents [OSTI]

In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Rogers, John A; Meitl, Matthew; Sun, Yugang; Ko, Heung Cho; Carlson, Andrew; Choi, Won Mook; Stoykovich, Mark; Jiang, Hanqing; Huang, Yonggang; Nuzzo, Ralph G; Zhu, Zhengtao; Menard, Etienne; Khang, Dahl-Young

2014-05-20T23:59:59.000Z

423

Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics  

DOE Patents [OSTI]

In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Rogers, John A. (Champaign, IL); Meitl, Matthew (Raleigh, NC); Sun, Yugang (Naperville, IL); Ko, Heung Cho (Urbana, IL); Carlson, Andrew (Urbana, IL); Choi, Won Mook (Champaign, IL); Stoykovich, Mark (Dover, NH); Jiang, Hanqing (Urbana, IL); Huang, Yonggang (Glencoe, IL); Nuzzo, Ralph G. (Champaign, IL); Lee, Keon Jae (Tokyo, JP); Zhu, Zhengtao (Rapid City, SD); Menard, Etienne (Durham, NC); Khang, Dahl-Young (Seoul, KR); Kan, Seong Jun (Daejeon, KR); Ahn, Jong Hyun (Suwon, KR); Kim, Hoon-sik (Champaign, IL)

2012-07-10T23:59:59.000Z

424

Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof  

DOE Patents [OSTI]

In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.

Nikolic, Rebecca J.; Conway, Adam M.; Nelson, Art J.; Payne, Stephen A.

2012-09-04T23:59:59.000Z

425

Methods of forming semiconductor devices and devices formed using such methods  

DOE Patents [OSTI]

Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

Fox, Robert V; Rodriguez, Rene G; Pak, Joshua

2013-05-21T23:59:59.000Z

426

Griffiths-Hurst-Sherman Inequalities and a Lee-Yang Therorem for the (?4)2 Field Theory  

Science Journals Connector (OSTI)

The Griffiths-Hurst-Sherman inequalities and the Lee-Yang zero theorem in the theory of Ising ferromagnets are shown to hold in a two-dimensional self-coupled Bose quantume field theory with interaction: a?4+b?2-??:. Applications include the continuity of the infinite-volume "magnetization," ??(0)?, away from ?=0. Our results should carry over to three or four dimensions once it is known how to control the ultraviolet divergences in these theories.

Barry Simon and Robert B. Griffiths

1973-05-07T23:59:59.000Z

427

Gauge-invariant and infrared-improved variational analysis of the Yang-Mills vacuum wave functional  

SciTech Connect (OSTI)

We study a gauge-invariant variational framework for the Yang-Mills vacuum wave functional. Our approach is built on gauge-averaged Gaussian trial functionals which substantially extend previously used trial bases in the infrared by implementing a general low-momentum expansion for the vacuum-field dispersion (which is taken to be analytic at zero momentum). When completed by the perturbative Yang-Mills dispersion at high momenta, this results in a significantly enlarged trial-functional space which incorporates both dynamical mass generation and asymptotic freedom. After casting the dynamics associated with these wave functionals into an effective action for collections of soft vacuum-field orbits, the leading infrared improvements manifest themselves as four-gradient interactions. Those turn out to significantly lower the minimal vacuum energy density, thus indicating a clear overall improvement of the vacuum description. The dimensional transmutation mechanism and the dynamically generated mass scale remain almost quantitatively robust, however, which ensures that our prediction for the gluon condensate is consistent with standard values. Further results include a finite group velocity for the soft gluonic modes due to the higher-gradient corrections and indications for a negative differential color resistance of the Yang-Mills vacuum.

Forkel, Hilmar [Institut fuer Physik, Humboldt-Universitaet zu Berlin, D-12489 Berlin (Germany)

2010-04-15T23:59:59.000Z

428

Understanding How Semiconductors Absorb Light | U.S. DOE Office of Science  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

How Semiconductors Absorb Light How Semiconductors Absorb Light Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » March 2013 Understanding How Semiconductors Absorb Light Advances in how we calculate optical properties of semiconductors shorten the path to improved solar cells and other optoelectronic devices. Print Text Size: A A A Subscribe FeedbackShare Page Click to enlarge photo. Enlarge Photo

429

Time-, Energy-, and Phase-Resolved Second-Harmonic Generation at Semiconductor Interfaces  

Science Journals Connector (OSTI)

Time-, Energy-, and Phase-Resolved Second-Harmonic Generation at Semiconductor Interfaces ... We report the development of a femtosecond spectral interferometry technique for second-harmonic generation with time, energy, and phase resolution. ...

C. A. Nelson; J. Luo; A. K.-Y. Jen; R. B. Laghumavarapu; D. L. Huffaker; X.-Y. Zhu

2014-11-12T23:59:59.000Z

430

Optical Probe for Semiconductor: Cooperative Research and Development Final Report, CRADA Number CRD-06-206  

SciTech Connect (OSTI)

This CRADA involves development of a new semiconductor characterization tool, Optical Probe, which can be commercialized by GT Solar. GT Solar will participate in the design and testing of this instrument that will be developed under an IPP project.

Sopori, B.

2011-02-01T23:59:59.000Z

431

Analysis of silicon carbide based semiconductor power devices and their application in power factor correction  

E-Print Network [OSTI]

cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. Material technologies superior to Si are needed for future power device developments. Silicon Carbide (SiC) based semiconductor devices...

Durrani, Yamin Qaisar

2005-11-01T23:59:59.000Z

432

Economic feasibility of a PV system for grid-connected semiconductor facilities in South Korea  

Science Journals Connector (OSTI)

In this study, a cost optimization and sensitivity analysis were carried out for the deployment of a photovoltaic (PV) system in a semiconductor facility in South Korea. The Microgrid software (HOMER) was used...

Hyung Jong Choi; Gwon Deok Han

2013-11-01T23:59:59.000Z

433

Searching Room Temperature Ferromagnetism in Wide Gap Semiconductors Fe-doped Strontium Titanate and Zinc Oxide  

E-Print Network [OSTI]

Scientic findings in the very beginning of the millennium are taking us a step further in the new paradigm of technology: spintronics. Upgrading charge-based electronics with the additional degree of freedom of the carriers spin-state, spintronics opens a path to the birth of a new generation of devices with the potential advantages of non-volatility and higher processing speed, integration densities and power efficiency. A decisive step towards this new age lies on the attribution of magnetic properties to semiconductors, the building block of today's electronics, that is, the realization of ferromagnetic semiconductors (FS) with critical temperatures above room temperature. Unfruitful search for intrinsic RT FS lead to the concept of Dilute(d) Magnetic Semiconductors (DMS): ordinary semiconductor materials where 3 d transition metals randomly substitute a few percent of the matrix cations and, by some long-range mechanism, order ferromagnetically. The times are of intense research activity and the last few ...

Pereira, LMC; Wahl, U

434

Size-Dependent Composition of Semiconductor Nanoparticles in Glass* P. D. Persans, L. B. Lurio+  

E-Print Network [OSTI]

1 Size-Dependent Composition of Semiconductor Nanoparticles in Glass* P. D. Persans, L. B. Lurio in nanoparticle precipitates. * Supported by DOE DE-FG02-97ER45662. Contact: P. D. Persans, Physics Department

Persans, Peter D.

435

Novel fabrication and optoelectronic property of semiconductor filaments by optical-fiber thermal drawing  

E-Print Network [OSTI]

One dimensional nanostructure such as nanowires is typically fabricated by the wafer-based approach. Here we report nanowires are fabricated by thermal drawing of fiber. A thin viscous semiconductor film internal to the ...

Deng, D. S.

436

Ge-on-Si Integrated Photonics: New Tricks from an Old Semiconductor  

E-Print Network [OSTI]

We review recent progress in Ge active photonic devices for electronic-photonic integration on Si, demonstrating new tricks in optoelectronics from this old semiconductor material used for the first transistor more than ...

Jifeng, Liu

437

Physics and simulation of transport processes in hybrid organic semiconductor devices  

E-Print Network [OSTI]

Organic semiconductors and nanomaterials promise to potentially form the basis for future efficient and cost-effective large area optoelectronic devices, such as lightemitting diodes and solar cells. Although these materials' ...

Rousseau, Ian Michael

2010-01-01T23:59:59.000Z

438

Semiconductor-based all-optical switching for optical time-division multiplexed networks  

E-Print Network [OSTI]

All-optical switching will likely be required for future optical networks operating at data rates which exceed electronic processing speeds. Switches utilizing nonlinearities in semiconductor optical amplifiers (SOA) are ...

Robinson, Bryan S. (Bryan Shawn), 1975-

2003-01-01T23:59:59.000Z

439

Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications  

Broader source: Energy.gov [DOE]

Recording and text version of the Fuel Cell Technologies Office webinar titled "Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications," originally presented on October 21, 2014.

440

Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications  

Broader source: Energy.gov [DOE]

The Energy Department will present a live webinar titled "Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications" on Tuesday, October 21, at 12:00 p...

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Reliability-yield allocation for semiconductor integrated circuits: modeling and optimization  

E-Print Network [OSTI]

This research develops yield and reliability models for fault-tolerant semiconductor integrated circuits and develops optimization algorithms that can be directly applied to these models. Since defects cause failures in microelectronics systems...

Ha, Chunghun

2005-11-01T23:59:59.000Z

442

Engineering Density of States of Earth Abundant Semiconductors for Enhanced Thermoelectric Power Factor  

Broader source: Energy.gov [DOE]

In highly mismatched semiconductor alloys, localized states of the impurities hybridize with energy bands of the host and lead to a density of states that can be optimally tuned to enhance the thermoelectric thermopower

443

Semiconductor with protective surface coating and method of manufacture thereof. [Patent application  

DOE Patents [OSTI]

Passivation of predominantly crystalline semiconductor devices is provided for by a surface coating of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating of amorphous germanium onto the etched and quenched diode surface in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices, which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating compensates for pre-existing undesirable surface states as well as protecting the semiconductor device against future impregnation with impurities.

Hansen, W.L.; Haller, E.E.

1980-09-19T23:59:59.000Z

444

Method for making graded I-III-VI.sub.2 semiconductors and solar cell obtained thereby  

DOE Patents [OSTI]

Improved cell photovoltaic conversion efficiencies are obtained by the simultaneous elemental reactive evaporation process of Mickelsen and Chen for making semiconductors by closer control of the evaporation rates and substrate temperature during formation of the near contact, bulk, and near junction regions of a graded I-III-VI.sub.2, thin film, semiconductor, such as CuInSe.sub.2 /(Zn,Cd)S or another I-III-VI.sub.2 /II-VI heterojunction.

Devaney, Walter E. (Seattle, WA)

1987-08-04T23:59:59.000Z

445

Investigation of inherent radio frequency oscillation and minor switching in amorphous chalcogenide semiconductors  

E-Print Network [OSTI]

INVESTIGATION OF INHERENT RADIO FREQUENCY OSCILLATION AND MINOR SWITCHING IN AMORPHOUS CHALCOGENIDE SEMICONDUCTORS A Thesis by ROBERT WAYNE GILL JR. Submitted to the Graduate College of Texas AAM University in partial fulfillment... of the requirement for the degree of MASTER OF SCIENCE August 1971 Major Subject: Electrical Engineering INVESTIGATION OF INHERENT RADIO FREQUENCY OSCILLATION AND MINOR SWITCHING IN AMORPHOUS CHALCOGENIDE SEMICONDUCTORS A Thesis by ROBERT WAYNE GILL JR...

Gill, Robert Wayne

1971-01-01T23:59:59.000Z

446

Compositions of doped, co-doped and tri-doped semiconductor materials  

DOE Patents [OSTI]

Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

Lynn, Kelvin (Pullman, WA); Jones, Kelly (Colfax, WA); Ciampi, Guido (Watertown, MA)

2011-12-06T23:59:59.000Z

447

Metal-semiconductor hybrid thin films in field-effect transistors  

SciTech Connect (OSTI)

Metal-semiconductor hybrid thin films consisting of an amorphous oxide semiconductor and a number of aluminum dots in different diameters and arrangements are formed by electron beam lithography and employed for thin-film transistors (TFTs). Experimental and computational demonstrations systematically reveal that the field-effect mobility of the TFTs enhances but levels off as the dot density increases, which originates from variations of the effective channel length that strongly depends on the electric field distribution in a transistor channel.

Okamura, Koshi, E-mail: koshi.okamura@kit.edu; Dehm, Simone [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany)] [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany); Hahn, Horst [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany) [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe (Germany); KIT-TUD Joint Research Laboratory Nanomaterials, Technische Universitt Darmstadt, Petersenstr. 32, 64287 Darmstadt (Germany)

2013-12-16T23:59:59.000Z

448

Broadly defining lasing wavelengths in single bandgap-graded semiconductor nanowires  

E-Print Network [OSTI]

optoelectronic devices. KEYWORDS: Cadmium sulfide selenide, bandgap-graded nanowire, lasing, defining wavelength, mode selectivity Semiconductor NW lasers have recently attracted a great deal of interest, since they have large numbers of potential... applications in future photonic and optoelectronic devices.1-5 To push NW lasers closer to practical applications, some important challenges, for instance, wavelength variability, must be addressed. To date, a number of binary semiconductor NW lasers...

Yang, Zongyin; Wang, Delong; Meng, Chao; Wu, Zhemin; Wang, Yong; Ma, Yaoguang; Dai, Lun; Liu, Xiaowei; Hasan, Tawfique; Liu, Xu; Yang, Qing

2014-05-05T23:59:59.000Z

449

Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors  

SciTech Connect (OSTI)

The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering. Organic semiconductors are emerging as viable materials for low-cost electronics and optoelectronics, such as organic photovoltaics (OPV), organic field effect transistors (OFETs), and organic light emitting diodes (OLEDs). Despite extensive studies spanning many decades, a clear understanding of the nature of charge carriers in organic semiconductors is still lacking. It is generally appreciated that polaron formation and charge carrier trapping are two hallmarks associated with electrical transport in organic semiconductors; the former results from the low dielectric constants and weak intermolecular electronic overlap while the latter can be attributed to the prevalence of structural disorder. These properties have lead to the common observation of low charge carrier mobilities, e.g., in the range of 10-5 - 10-3 cm2/Vs, particularly at low carrier concentrations. However, there is also growing evidence that charge carrier mobility approaching those of inorganic semiconductors and metals can exist in some crystalline organic semiconductors, such as pentacene, tetracene and rubrene. A particularly striking example is single crystal rubrene (Figure 1), in which hole mobilities well above 10 cm2/Vs have been observed in OFETs operating at room temperature. Temperature dependent transport and spectroscopic measurements both revealed evidence of free carriers in rubrene. Outstanding questions are: what are the structural features and physical properties that make rubrene so unique? How do we establish fundamental design principles for the development of other organic semiconductors of high mobility? These questions are critically important but not comprehensive, as the nature of charge carriers is known to evolve as the carrier concentration increases, due to the presence of intrinsic disorder in organic semiconductors. Thus, a complementary question is: how does the nature of charge transport change as a function of carrier concentration?

Zhu, Xiaoyang

2014-12-10T23:59:59.000Z

450

Block Copolymer Templated Chemistry for the Formation of Metallic Nanoparticle Arrays on Semiconductor Surfaces  

Science Journals Connector (OSTI)

One of key ingredients for many future applications is the ability to precisely pattern nanoscale features on technologically relevant semiconductor surfaces such as silicon and germanium, as well as compound semiconductors such as gallium arsenide and indium phosphide. ... Deposition of these metals is possible presumably due to the water solubility of their oxides:? Ge oxide,14c As oxide,24 and P oxide25 are soluble in water. ...

Masato Aizawa; Jillian M. Buriak

2007-09-25T23:59:59.000Z

451

Preliminary studies and tests of semiconductors for their use as nuclear radiation detectors  

E-Print Network [OSTI]

of the semiconductors which were used in the tests~ and from Hughes Ines of Culver City, California, who provided a set of diodes of a type that had been sucessfully used as a radiation detector. 1 1 See article by Salzberg and Siegal of Airborne Instru- ments... that each semiconductor junction has a different breakdown point and has a different thermal noise pulse versus temperature characteristic. Silicon diodes were selected for tests because of their low thermal noise char- acteristics. The experimenter...

Willis, Giles Whitehurst

2012-06-07T23:59:59.000Z

452

Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 2)-O  

Science Journals Connector (OSTI)

The exothermic nature of oxidation causes nearly all semiconductor applications in various fields like electronics, medicine, photonics, and sensor technology to acquire an oxidized semiconductor surface part during the application manufacturing. The significance of understanding and controlling the atomic scale properties of oxidized semiconductor surfaces is expected to increase even further with the development of nanoscale semiconductor crystals. The nature of oxidized semiconductor layers is, however, hard to predict and characterize as they are usually buried and amorphous. To shed light on these issues, we pursue a different approach based on oxidized III-V semiconductor layers that are crystalline. We present a comprehensive characterization of oxidized crystalline InSb(100)(12)-O layers by ab initio calculations, photoelectron spectroscopy, scanning tunneling microscopy, and spectroscopy, and demonstrate the electronic band structures of different oxidized phases of the semiconductor, which elucidate the previous contradictory semiconductor-oxidation effects. At 0.5 monolayer (ML) oxidation, oxygen atoms tend to occupy subsurface Sb sites, leading to metallic states in the semiconductor band gap, which arise from top dimers. When the oxidation is increased to the 1.02.0 ML concentration, oxygen occupies also interstitial sites, and the insulating band structure without gap states is stabilized with unusual occupied In dangling bonds. In contrast, the 2.53.0 ML oxide phases undergo significant changes toward a less ordered structure. The findings suggest a methodology for manipulating the electronic structure of oxidized semiconductor layers.

J. J. K. Lng; M. P. J. Punkkinen; M. Tuominen; H.-P. Hedman; M. Vh-Heikkil; V. Polojrvi; J. Salmi; V.-M. Korpijrvi; K. Schulte; M. Kuzmin; R. Punkkinen; P. Laukkanen; M. Guina; K. Kokko

2014-07-29T23:59:59.000Z

453

Semiconductor bridge: A plasma generator for the ignition of explosives  

SciTech Connect (OSTI)

Small metal bridgewires are commonly used to ignite energetic powders such as pyrotechnics, propellants, and primary or secondary explosives. In this paper we describe a new means for igniting explosive materials using a semiconductor bridge (SCB). When driven with a short (20 ..mu..s), low-energy pulse (less than 3.5 mJ), the SCB produces a hot plasma that ignites explosives. The SCB, a heavily n-doped silicon film, typically 100 ..mu..m long by 380 ..mu..m wide by 2 ..mu..m thick, is 30 times smaller in volume than a conventional bridgewire. SCB devices produce a usable explosive output in a few tens of microseconds and operate at one-tenth the input energy of metal bridgewires. In spite of the low energies for ignition, SCB devices are explosively safe. We describe SCB processing and experiments evaluating SCB operation. Also discussed are the SCB vaporization process, plasma formation, optical spectra from the discharge, heat transfer mechanisms from the SCB to the explosive powders, and SCB device applications.

Benson, D.A.; Larsen, M.E.; Renlund, A.M.; Trott, W.M.; Bickes R.W. Jr.

1987-09-01T23:59:59.000Z

454

Semiconductor bridge: A plasma generator for the ignition of explosives  

Science Journals Connector (OSTI)

Small metal bridgewires are commonly used to ignite energetic powders such as pyrotechnics propellants and primary or secondary explosives. In this paper we describe a new means for igniting explosive materials using a semiconductor bridge (SCB). When driven with a short (20 ?s) low?energy pulse (less than 3.5 mJ) the SCB produces a hot plasma that ignites explosives. The SCB a heavily n?doped silicon film typically 100 ?m long by 380 ?m wide by 2 ?m thick is 30 times smaller in volume than a conventional bridgewire. SCB devices produce a usable explosive output in a few tens of microseconds and operate at one?tenth the input energy of metal bridgewires. In spite of the low energies for ignition SCB devices are explosively safe. We describe SCB processing and experiments evaluating SCB operation. Also discussed are the SCB vaporization process plasma formation optical spectra from the discharge heat transfer mechanisms from the SCB to the explosive powders and SCB device applications.

D. A. Benson; M. E. Larsen; A. M. Renlund; W. M. Trott; R. W. Bickes Jr.

1987-01-01T23:59:59.000Z

455

Metal-to-Semiconductor Transition in Hexagonal NiS  

Science Journals Connector (OSTI)

Recent electrical resistivity measurements have shown that the hexagonal form of stoichiometric NiS exhibits an abrupt metal-to-semiconductor transition at 264K. Neutron diffraction studies have shown that a first-order paramagnetic-to-antiferromagnetic transition also occurs at 264K. No crystal lattice distortion is observed at the transition nor detected at 4.2K, suggesting that this may be a transition of the kind considered by Adler and Brooks. The measured magnetic moment at 4.2K is 1.660.08 ?? and at 260K it is 150.0.10 ?? indicating that the sublattice magnetization is within 10% of saturation immediately upon ordering. The neutron data also shown that no more than about 1% of the Ni atoms migrate to tetragonal interstitial sites on warming from 4.2K to room temperature. Thus, Ni atom migration apparently plays no part in this transition. The powder magnetic susceptibility is 2.2410-6 emu/g at 300K and is virtually temperature-independent above the transition. ? increases abruptly at 264K by about 15% and exhibits some field-cooling effects. Studies on the compounds NiXS, for X=1.01,0.99,0.97,and0.94 show that excess sulfur lowers the transition temperature.

JOSEPH T. SPARKS and TED KOMOTO

1968-10-01T23:59:59.000Z

456

Peltier heat of a small polaron in a magnetic semiconductor  

SciTech Connect (OSTI)

The heat transported with a small polaron in both antiferromagnetic and ferromagnetic semiconductors is calculated. This heat, the Peltier heat, ..pi.., is obtained from the change of the entropy of the total system upon introduction of a charge carrier. We explicitly consider both the intrasite and intersite exchange interactions between a small polaron and the interacting spins of a spin-1/2 magnet. There are two competing magnetic contributions to the Peltier heat. First, adding the carrier increases the spin entropy of the system. This provides a positive contribution to ..pi... Second, the exchange between the carrier and the sites about it enhances the exchange binding between these sites. This reduces the energetically allowable spin configurations and provides a negative contribution to ..pi... At extremely high temperature when kT exceeds the intrasite exchange energy, the first effect dominates. Then ..pi.. is simply augmented by kTln2. However, well below the magnetic transition temperature the second effect dominates. In the experimentally accessible range between these limits both effects are comparable and sizable. The net magnetic contribution to the Peltier heat rises with temperature. Thus, a carrier's interactions with its magnetic environment produces a significant and distinctive contribution to its Peltier heat.

Liu, N.L.H.; Emin, D.

1984-01-01T23:59:59.000Z

457

Peltier heat of a small polaron in a magnetic semiconductor  

SciTech Connect (OSTI)

For the first time the heat transported with a small polaron in both antiferromagnetic and ferromagnetic semiconductors is calculated. This heat, the Peltier heat, ..pi.., is obtained from the change of the entropy of the total system upon introduction of a charge carrier. We explicitly consider both the intrasite and intersite exchange interactions between a small polaron and the interacting spins of a spin-1/2 magnet. There are two competing magnetic contributions to the Peltier heat. First, adding the carrier increases the spin entropy of the system. This provides a positive contribution to ..pi... Second, the exchange between the carrier and the sites about it enhances the exchange binding between these sites. This reduces the energetically allowable spin configurations and provides a negative contribution to ..pi... At extremely high temperatures when kT exceeds the intrasite exchange energy, the first effect dominates. Then ..pi.. is simply augmented by kT ln 2. However, well below the magnetic transition temperature the second effect dominates. In the experimentally accessible range between these limits both effects are comparable and sizable. The net magnetic contribution to the Peltier heat rises with temperature. Thus, a carrier's interactions with its magnetic environment produces a significant and distinctive contribution to its Peltier heat.

Liu, N.H.; Emin, D.

1985-04-15T23:59:59.000Z

458

Sputter deposition of semiconductor superlattices for thermoelectric applications  

SciTech Connect (OSTI)

Theoretical dramatic improvement of the thermoelectric properties of materials by using quantum confinement in novel semiconductor nanostructures has lead to considerable interest in the thermoelectric community. Therefore, we are exploring the critical materials issues for fabrication of quantum confined structures by magnetron sputtering in the lead telluride and bismuth telluride families of materials. We have synthesized modulated structures from thermoelectric materials with bilayer periods of as little as 3.2 nm and shown that they are stable at deposition temperatures high enough to grow quality films. Issues critical to high quality film growth have been investigated such as nucleation and growth conditions and their effect on crystal orientation and growth morphology. These investigations show that nucleating the film at a temperature below the growth temperature of optimum electronic properties produces high quality films. Our work with sputter deposition, which is inherently a high rate deposition process, builds the technological base necessary to develop economical production of these advanced materials. High deposition rate is critical since, even if efficiencies comparable with CFC based refrigeration systems can be achieved, large quantities of quantum confined materials will be necessary for cost-competitive uses.

Wagner, A.V.; Foreman, R.J.; Farmer, J.C.; Barbee, T.W.

1996-11-01T23:59:59.000Z

459

Electromagnetic waves reflection, transmission and absorption by graphene - magnetic semiconductor - graphene sandwich-structure in magnetic field: Faraday geometry  

E-Print Network [OSTI]

Electrodynamic properties of the graphene - magnetic semiconductor - graphene sandwich-structure have been investigated theoretically with taking into account the dissipation processes. Influence of graphene layers on electromagnetic waves propagation in graphene - semi-infinte magnetic semiconductor and graphene - magnetic semiconductor - graphene sandwich-structure has been analyzed. Frequency and field dependences of the reflectance, transmittance and absorbtance of electromagnetic waves by such structure have been calculated. The size effects associated with the thickness of the structure have been analyzed. The possibility of efficient control of electrodynamic properties of graphene - magnetic semiconductor - graphene sandwich structure by an external magnetic field has been shown.

Kuzmin, Dmitry A; Shavrov, Vladimir G

2014-01-01T23:59:59.000Z

460

Photo-carrier radiometry of semiconductors: A novel powerful optoelectronic diffusion-wave technique for silicon process  

E-Print Network [OSTI]

Photo-carrier radiometry of semiconductors: A novel powerful optoelectronic diffusion-defect PCR images thus obtained prove that very-near-surface (where optoelectronic device fabrication takes

Mandelis, Andreas

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Environmental Stewardship: How Semiconductor Suppliers Help to Meet Energy-Efficiency Regulations and Voluntary Specifications in China  

E-Print Network [OSTI]

How Semiconductor Suppliers Help to Meet Energy-EfficiencyCorrection (PFC) controllers helps to regulate current tofurther be achieved to help to meet some of the stringent

Aizhen, Li; Fanara, Andrew; Fridley, David; Merriman, Louise; Ju, Jeff

2008-01-01T23:59:59.000Z

462

Black hole physics, confining solutions of SU(3)-Yang-Mills equations and relativistic models of mesons  

E-Print Network [OSTI]

The black hole physics techniques and results are applied to find the set of the exact solutions of the SU(3)-Yang-Mills equations in Minkowski spacetime in the Lorentz gauge. All the solutions contain only the Coulomb-like or linear in $r$ components of SU(3)-connection. This allows one to obtain some possible exact and approximate solutions of the corresponding Dirac equation that can describe the relativistic bound states. Possible application to the relativistic models of mesons is also outlined.

Yu. P. Goncharov

2001-04-29T23:59:59.000Z

463

Production of films and powders for semiconductor device applications  

DOE Patents [OSTI]

A process is described for chemical bath deposition of selenide and sulfide salts as films and powders employable as precursors for the fabrication of solar cell devices. The films and powders include (1) Cu{sub x}Se{sub n}, wherein x=1--2 and n=1--3; (2) Cu{sub x}Ga{sub y}Se{sub n}, wherein x=1--2, y=0--1 and n=1--3; (3) Cu{sub x}In{sub y}Se{sub n}, wherein x=1--2.27, y=0.72--2 and n=1--3; (4) Cu{sub x}(InGa){sub y}Se{sub n}, wherein x=1--2.17, y=0.96--2 and n=1--3; (5) In{sub y}Se{sub n}, wherein y=1--2.3 and n=1--3; (6) Cu{sub x}S{sub n}, wherein x=1--2 and n=1--3; and (7) Cu{sub x}(InGa){sub y}(SeS){sub n}, wherein x=1--2, y=0.07--2 and n=0.663--3. A reaction vessel containing therein a substrate upon which will form one or more layers of semiconductor material is provided, and relevant solution mixtures are introduced in a sufficient quantity for a sufficient time and under favorable conditions into the vessel to react with each other to produce the resultant salt being prepared and deposited as one or more layers on the substrate and as a powder on the floor of the vessel. Hydrazine is present during all reaction processes producing non-gallium containing products and optionally present during reaction processes producing gallium-containing products to function as a strong reducing agent and thereby enhance reaction processes. 4 figs.

Bhattacharya, R.N.; Noufi, R.; Li Wang

1998-03-24T23:59:59.000Z

464

Thermoelectric power of small polarons in magnetic semiconductors  

SciTech Connect (OSTI)

The thermoelectric power (Seebeck coefficient) ..cap alpha.. of a small polaron in both ferromagnetic and antiferromagnetic semiconductors and insulators is calculated for the first time. In particular, we obtain the contribution to the Seebeck coefficient arising from exchange interactions between the severely localized carrier (i.e., small polaron) of charge q and the spins of the host lattice. In essence, we study the heat transported along with a carrier. This heat, the Peltier heat, Pi, is related to the Seebeck coefficient by the Kelvin relation: Pi = qT..cap alpha.., where T is the temperature. The heat per carrier is simply the product of the temperature and the change of the entropy of the system when a small polaron is added to it. The magnetic contribution to the Seebeck coefficient is therefore directly related to the change of the magnetic entropy of the system upon introduction of a charge carrier. We explicitly treat the intrasite and intersite exchange interactions between a small polaron and the spins of a spin-1/2 system. These magnetic interactions produce two competing contributions to the Seebeck coefficient. First, adding the carrier tends to provide extra spin freedom (e.g., spin up or spin down of the carrier). This effect augments the entropy of the system, thereby producing a positive contribution to the Peltier heat. Second, however, the additional exchange between the carrier and the sites about it enhances the exchange binding among these sites. This generally reduces the energetically allowable spin configurations. The concomitant reduction of the system's entropy provides a negative contribution to the Peltier heat. At the highest of temperatures, when kT exceeds the intrasite exchange energy, the first effect dominates. Then, the Peltier heat is simply augmented by kT ln2.

Liu, N.H.; Emin, D.

1984-09-15T23:59:59.000Z

465

Details in Semiconductors Gordon Conference, New London, NH, August 3-8, 2008  

SciTech Connect (OSTI)

Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in homogeneous and structured semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, with an increases emphasis on nanostructures as compared to previous conferences. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference deals with defects in a broad range of bulk and nanoscale electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, doped nanoparticles, and organic semiconductors. Presentations of state-of-the-art theoretical methods will contribute to a fundamental understanding of atomic-scale phenomena. The program consists of about twenty invited talks, with plenty of discussion time, and a number of contributed poster sessions. Because of the large amount of discussion time, the conference provides an ideal forum for dealing with topics that are new and/or controversial.

Shengbai Zhang and Nancy Ryan Gray

2009-09-16T23:59:59.000Z

466

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer  

DOE Patents [OSTI]

The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

Spahn, O.B.; Lear, K.L.

1998-03-10T23:59:59.000Z

467

Low Energy Ion Implantationin Semiconductor Manufacturing | U.S. DOE Office  

Office of Science (SC) Website

Low Energy Ion Implantation in Low Energy Ion Implantation in Semiconductor Manufacturing Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Spinoff Applications Spinoff Archives SBIR/STTR Applications of Nuclear Science and Technology Funding Opportunities Nuclear Science Advisory Committee (NSAC) News & Resources Contact Information Nuclear Physics U.S. Department of Energy SC-26/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3613 F: (301) 903-3833 E: sc.np@science.doe.gov More Information » Spinoff Archives Low Energy Ion Implantation in Semiconductor Manufacturing Print Text Size: A A A RSS Feeds FeedbackShare Page Application/Instrumentation: Low Energy Ion Implantation in Semiconductor Manufacturing Developed at: BNL, New York; High Current Electronic Institute, Tomsk, Russia; Institute for Theoretical and Experimental Physics (ITEP), Moscow, Russia

468

Argonne CNM News: New inorganic semiconductor layers hold promise for solar  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

New inorganic semiconductor layers hold promise for solar energy New inorganic semiconductor layers hold promise for solar energy Inorganic surface ligands Inorganic surface ligands enable facile electron transport between quantum dots and opened novel opportunities for using nanostructures in solar cells. Inorganic dot array Arrays of quantum dots allow fabrication of solar cells by printing and other inexpensive techniques. A team of users from the University of Chicago, working with the NanoBio Interfaces Group, has demonstrated a method that could produce cheaper semiconductor layers for solar cells. The inorganic nanocrystal arrays, created by spraying a new type of colloidal "ink," have excellent electron mobility and could be a step toward addressing fundamental problems with current solar technology.

469

STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM OPTO SEMICONDUCTORS, INC. FOR AN ADVANCE WAIVER  

Broader source: Energy.gov (indexed) [DOE]

OSRAM OPTO SEMICONDUCTORS, INC. FOR AN ADVANCE WAIVER OSRAM OPTO SEMICONDUCTORS, INC. FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS UNDER DOE COOPERATIVE AGREEMENT NO. DE-FC26-04NT41947; W(A)-04-021, CH-1190 The Petitioner, Osram Opto Semiconductors (Osram), was awarded this cooperative agreement for the performance of work entitled, "Polymer OLED White Light Development Program." In this program, Osram will develop, fabricate, and fully characterize a 12-inch square OLED (Organic Light Emitting Diode) white light prototype. The prototype will be based on use of multiple discrete 3-inch square white light devices fabricated on glass substrates. A broadband light-emitting co-polymer for the generation of white light, from either a single large area emitting film, or from a relatively small number of segmented emitting films will be used. An alternate

470

Predicted band structures of III-V semiconductors in the wurtzite phase  

SciTech Connect (OSTI)

While non-nitride III-V semiconductors typically have a zinc-blende structure, they may also form wurtzite crystals under pressure or when grown as nanowhiskers. This makes electronic structure calculation difficult since the band structures of wurtzite III-V semiconductors are poorly characterized. We have calculated the electronic band structure for nine III-V semiconductors in the wurtzite phase using transferable empirical pseudopotentials including spin-orbit coupling. We find that all the materials have direct gaps. Our results differ significantly from earlier ab initio calculations, and where experimental results are available (InP, InAs, and GaAs) our calculated band gaps are in good agreement. We tabulate energies, effective masses, and linear and cubic Dresselhaus zero-field spin-splitting coefficients for the zone-center states. The large zero-field spin-splitting coefficients we find may facilitate the development of spin-based devices.

De, A.; Pryor, Craig E. [Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242 (United States)

2010-04-15T23:59:59.000Z

471

Spatiotemporal patterns in a dc semiconductor-gas-discharge system: Stability analysis and full numerical solutions  

Science Journals Connector (OSTI)

A system very similar to a dielectric barrier discharge, but with a simple stationary dc voltage, can be realized by sandwiching a gas discharge and a high-ohmic semiconductor layer between two planar electrodes. In experiments this system forms spatiotemporal and temporal patterns spontaneously, quite similarly to, e.g., Rayleigh-Bnard convection. Here it is modeled with a simple discharge model with space charge effects, and the semiconductor is approximated as a linear conductor. In previous work, this model has reproduced the phase transition from homogeneous stationary to homogeneous oscillating states semiquantitatively. In the present work, the formation of spatial patterns is investigated through linear stability analysis and through numerical simulations of the initial value problem; the methods agree well. They show the onset of spatiotemporal patterns for high semiconductor resistance. The parameter dependence of temporal or spatiotemporal pattern formation is discussed in detail.

Ismail R. Rafatov, Danijela D. ija?i?, and Ute Ebert

2007-09-12T23:59:59.000Z

472

Spectroscopy of Charge Carriers and Traps in Field-Doped Organic Semiconductors  

SciTech Connect (OSTI)

This research project aims to achieve quantitative and molecular level understanding of charge carriers and traps in field-doped organic semiconductors via in situ optical absorption spectroscopy, in conjunction with time-resolved electrical measurements. During the funding period, we have made major progress in three general areas: (1) probed charge injection at the interface between a polymeric semiconductor and a polymer electrolyte dielectric and developed a thermodynamic model to quantitatively describe the transition from electrostatic to electrochemical doping; (2) developed vibrational Stark effect to probe electric field at buried organic semiconductor interfaces; (3) used displacement current measurement (DCM) to study charge transport at organic/dielectric interfaces and charge injection at metal/organic interfaces.

Zhu, Xiaoyang; Frisbie, C Daniel

2012-08-13T23:59:59.000Z

473

Solid-state lighting : lamp targets and implications for the semiconductor chip.  

SciTech Connect (OSTI)

A quiet revolution is underway. Over the next 5-10 years inorganic-semiconductor-based solid-state lighting technology is expected to outperform first incandescent, and then fluorescent and high-intensity-discharge, lighting. Along the way, many decision points and technical challenges will be faced. To help understand these challenges, the U.S. Department of Energy, the Optoelectronics Industry Development Association and the National Electrical Manufacturers Association recently updated the U.S. Solid-State Lighting Roadmap. In the first half of this paper, we present an overview of the high-level targets of the inorganic-semiconductor part of that update. In the second half of this paper, we discuss some implications of those high-level targets on the GaN-based semiconductor chips that will be the 'engine' for solid-state lighting.

Tsao, Jeffrey Yeenien

2003-08-01T23:59:59.000Z

474

Selective Alcohol Dehydrogenation and Hydrogenolysis with Semiconductor-Metal Photocatalysts: Toward Solar-to-Chemical Energy Conversion of Biomass-Relevant Substrates  

Science Journals Connector (OSTI)

Selective Alcohol Dehydrogenation and Hydrogenolysis with Semiconductor-Metal Photocatalysts: Toward Solar-to-Chemical Energy Conversion of Biomass-Relevant Substrates ... Coupled semiconductors of well-matched band energies are convenient to improve charge sepn. ...

T. Purnima A. Ruberu; Nicholas C. Nelson; Igor I. Slowing; Javier Vela

2012-09-13T23:59:59.000Z

475

Optically Detected Magnetic Resonance Studies on ?-conjugated semiconductor systems  

SciTech Connect (OSTI)

Optically Detected Magnetic Resonance (ODMR) techniques were used to investigate the dynamics of excitons and charge carriers in ?-conjugated organic semiconductors. Degradation behavior of the negative spin-1/2 electroluminescence-detected magnetic resonance (ELDMR) was observed in Alq3 devices. The increase in the resonance amplitude implies an increasing bipolaron formation during degradation, which might be the result of growth of charge traps in the device. The same behavior of the negative spin-1/2 ELDMR was observed in 2wt% Rubrene doped Tris(8-hydroxyquinolinato)aluminium (Alq3) devices. However, with increasing injection current, a positive spin-1/2 ELDMR, together with positive spin 1 triplet powder patterns at {delta}m{sub S}={+-}1 and {delta}m{sub S}={+-}2, emerges. Due to the similarities in the frequency dependences of single and double modulated ELDMR and the photoluminescence-detected magnetic resonance (PLDMR) results in poly[2-methoxy-5-(2 -ethyl-hexyloxy)-1,4-phenyl ene vinylene] (MEH-PPV) films, the mechanism for this positive spin-1/2 ELDMR was assigned to enhanced triplet-polaron quenching under resonance conditions. The ELDMR in rubrene doped Alq3 devices provides a path to investigate charge distribution in the device under operational conditions. Combining the results of several devices with different carrier blocking properties and the results from transient EL, it was concluded trions not only exist near buffer layer but also exist in the electron transport layer. This TPQ model can also be used to explain the positive spin-1/2 PLDMR in poly(3-hexylthiophene) (P3HT) films at low temperature and in MEH-PPV films at various temperatures up to room temperature. Through quantitative analysis, TE-polaron quenching (TPQ) model is shown having the ability to explain most behaviors of the positive spin-1/2 resonance. Photocurrent detected magnetic resonance (PCDMR) studies on MEH-PPV devices revealed a novel transient resonance signal. The signal may originate from the higher concentration of deep traps near cathode. A quantitative analysis based on this assumption was carried out and found to be consistent with the experimental results.

Chen, Ying

2011-12-06T23:59:59.000Z

476

Obtaining and investigation of Pb1-xMnxTe(Se, S) semimagnetic semiconductor nanolayers sesitive to infrared rays  

Science Journals Connector (OSTI)

In the given work the energy spectrum and wave functions have been theoretically calculated for quantum-sized films of Pb1-xMnxTe (Se,S) semimagnetic semiconductors. The photo-and electroluminescence properties of Pb1-xMnxTe ... Keywords: detector, electroluminescence, energy spectrum, infrared, nanolayer, photoluminescence, semimagnetic semiconductor, sensitive

M. A. Mehrabova; I. R. Nuriyev; R. M. Mamishova; T. I. Kerimova

2011-11-01T23:59:59.000Z

477

Magnetic quenching of time-reversed light in photorefractive diluted magnetic semiconductors M. Dinu, I. Miotkowski, and D. D. Nolte  

E-Print Network [OSTI]

Magnetic quenching of time-reversed light in photorefractive diluted magnetic semiconductors M 47907-1396 Received 18 February 1998 Magnetic fields selectively quench phase conjugation during photorefractive four-wave mixing experiments in the diluted magnetic semiconductor Cd1 xMnxTe. Phase conjugation

Nolte, David D.

478

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density  

E-Print Network [OSTI]

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density Zhi Chen properties of in situ deposited Si3N4 /Si/p-GaAs metal-insulator-semiconductor structures have been offered by a low gate leakage technology in GaAs, such as metal insulator structures, func- tional Ga

Chen, Zhi

479

A 75 GHz silicon metal-semiconductor-metal Schottky photodiode Sotiris Alexandrou, Chia-Chi Wang, and Thomas Y. Hsiang  

E-Print Network [OSTI]

A 75 GHz silicon metal-semiconductor-metal Schottky photodiode Sotiris Alexandrou, Chia-Chi Wang-semiconductor-metal (MSM) photodiodes with 300 nm finger width and spacing were measured with a subpicosecond electro of silicon MSM photodiodes. A configuration is suggested to improve the speed of these detectors at long

480

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 13, NO. 2, MAY 2000 181 Evaluating the Impact of Process Changes on  

E-Print Network [OSTI]

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 13, NO. 2, MAY 2000 181 Evaluating--Cluster tools are highly integrated machines that can perform a sequence of semiconductor manufacturing. In addition, we present an integrated simulation model that in- cludes a process model. For a given scheduling

Rubloff, Gary W.

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481

Diluted ferromagnetic semiconductor Li(Zn,Mn)P with decoupled charge and spin doping  

Science Journals Connector (OSTI)

We report the discovery of a diluted magnetic semiconductor, Li(Zn,Mn)P, in which charge and spin are introduced independently via lithium off-stoichiometry and the isovalent substitution of Mn2+ for Zn2+, respectively. Isostructural to (Ga,Mn)As, Li(Zn,Mn)P was found to be a p-type ferromagnetic semiconductor with excess lithium providing charge doping. First-principles calculations indicate that excess Li is favored to partially occupy the Zn site, leading to hole doping. Ferromagnetism with Curie temperature up to 34 K is achieved while the system still shows semiconducting transport behavior.

Z. Deng; K. Zhao; B. Gu; W. Han; J. L. Zhu; X. C. Wang; X. Li; Q. Q. Liu; R. C. Yu; T. Goko; B. Frandsen; L. Liu; Jinsong Zhang; Yayu Wang; F. L. Ning; S. Maekawa; Y. J. Uemura; C. Q. Jin

2013-08-21T23:59:59.000Z

482

Farey tree and devil's staircase of a modulated external-cavity semiconductor laser  

SciTech Connect (OSTI)

We report frequency locking at Farey fractions of an electrically modulated semiconductor laser within an external cavity. The winding numbers as a function of the ratio of the modulation frequency to inverse resonator round trip time show the hierarchy of a Farey tree and the structure of a devil's staircase. The dimension of the set complementary to the stairs is determined to be 0.89. This demonstrates that the external-cavity semiconductor laser exhibits the universal properties characteristic for nonlinear systems driven by two competing frequencies.

Baums, D.; Elsasser, W.; Gobel, E. O.

1989-07-10T23:59:59.000Z

483

The roadmap for downscaling and introducing new technologies in the semiconductor industry is well laid out for the next ten years2.  

E-Print Network [OSTI]

The roadmap for downscaling and introducing new technologies in the semiconductor industry is well in the International Technology Roadmap for Semiconductors, one- dimensional structures, such as carbon nanotubes an impact on future post-complementary metal- oxide-semiconductor (CMOS) technology depends on more factors

484

An Integrated Web Resource for Cotton Alan R. Gingle,* Hongyu Yang, Peng W. Chee, O. Lloyd May, Junkang Rong, Daryl T. Bowman,  

E-Print Network [OSTI]

An Integrated Web Resource for Cotton Alan R. Gingle,* Hongyu Yang, Peng W. Chee, O. Lloyd May Cotton Diversity Database'' (http://cotton.agtec.uga.edu) is a Web resource for cotton (Gossypium spp to begin with a cotton accession and obtain all available data. The phenotypic data displays include

Chee, Peng W.

485

Activation of Au/TiO2 Catalyst for CO Oxidation Jeff H. Yang, Juan D. Henao, Mpfunzeni C. Raphulu, Yingmin Wang, Tiziana Caputo,|  

E-Print Network [OSTI]

Activation of Au/TiO2 Catalyst for CO Oxidation Jeff H. Yang, Juan D. Henao, Mpfunzeni C. Raphulu; In Final Form: March 29, 2005 Changes in a Au/TiO2 catalyst during the activation process from an as and FTIR spectroscopy, complemented with XPS, microcalorimetry, and TEM characterization. When the catalyst

Marks, Laurence D.

486

S. Guha, J. Yang, A. Banerjee, K. Hoffman, S. Sugiyama, and J. Call United Solar Systems Corp., Troy, Michigan 48084 USA  

E-Print Network [OSTI]

Conversion Devices, Inc., Troy, Michigan 48084 USA spectral-splitting, triple-junction a-S alloy solar cell been achieved using a spectral-splitting, triple-junction cell technology incorporating i) high qualityS. Guha, J. Yang, A. Banerjee, K. Hoffman, S. Sugiyama, and J. Call United Solar Systems Corp

Deng, Xunming

487

Molecular-beam epitaxy growth of strontium thiogallate T. Yang, B. K. Wagner, M. Chaichimansour, W. Park, Z. L. Wang,a)  

E-Print Network [OSTI]

Molecular-beam epitaxy growth of strontium thiogallate T. Yang, B. K. Wagner, M. Chaichimansour, W-beam epitaxy growth and characterization of cerium doped strontium thiogallate SrGa2S4:Ce thin film phosphors growth of cerium doped strontium thiogallate on quartz substrates was first reported in 1994.3 Here we

Wang, Zhong L.

488

Biomimetic amplification of nanoparticle homing to tumors Derfus, Meng Yang, Robert M. Hoffman, Sangeeta Bhatia, Michael J. Sailor, and Erkki Ruoslahti  

E-Print Network [OSTI]

Biomimetic amplification of nanoparticle homing to tumors Derfus, Meng Yang, Robert M. Hoffman.pnas.org/misc/reprints.shtml To order reprints, see: Notes: #12;Biomimetic amplification of nanoparticle homing to tumors Dmitri, November 22, 2006 (sent for review November 13, 2006) Nanoparticle-based diagnostics and therapeutics hold

Bhatia, Sangeeta

489

An Integrated CoreWork for Fast InformationAppliance Buildup 1 Paul C. H. Lee, ChiWei Yang, RueiChuan Chang  

E-Print Network [OSTI]

, all the core components are designed modularly and well documented in exported and imported interface1 An Integrated Core­Work for Fast Information­Appliance Buildup 1 Paul C. H. Lee, Chi­Wei Yang is isolated and independent to others. Application designers can have more controls in behavior of each

Chen, Sheng-Wei

490

Superradiance Coherence Sizes in Single-Molecule Spectroscopy of LH2 Antenna Yang Zhao, Torsten Meier, Wei Min Zhang,, Vladimir Chernyak, and Shaul Mukamel*,,  

E-Print Network [OSTI]

Superradiance Coherence Sizes in Single-Molecule Spectroscopy of LH2 Antenna Complexes Yang Zhao diagonal disorder. This distribution which depends on both the exciton coherence sizes and the aggregate molecules or delocalized on the entire complex. The coherence size of the excitations is determined

Mukamel, Shaul

491

Acoustic-phonon propagation in rectangular semiconductor nanowires with elastically dissimilar barriers  

E-Print Network [OSTI]

Engineering, University of California--Riverside, Riverside, California 92521, USA Received 15 February 2005 dissimilar materials. As example systems, we have considered GaN nanowires with AlN and plastic barrier­5 The modification of the acoustic phonon dispersion in semiconductor superlattices has been mostly studied, both

492

Sputtered pin amorphous silicon semi-conductor device and method therefor  

DOE Patents [OSTI]

A high efficiency amorphous silicon PIN semi-conductor device is constructed by the sequential sputtering of N, I and P layers of amorphous silicon and at least one semi-transparent ohmic electrode. A method of construction produces a PIN device, exhibiting enhanced physical integrity and facilitates ease of construction in a singular vacuum system and vacuum pump down procedure.

Moustakas, Theodore D. (Berkeley Heights, NJ); Friedman, Robert A. (Milford, NJ)

1983-11-22T23:59:59.000Z

493

Inorganic-modified semiconductor TiO2 nanotube arrays for photocatalysis  

E-Print Network [OSTI]

or photoelectrochemical degradation of organic pollutants, the splitting of water into H2, and solar cells holds promise for meeting the global challenge of supplying clean energy. In this context, semiconductor TiO2 stands out and depletion of fossil fuel resources have emerged as two major obstacles for the sustainable development

Lin, Zhiqun

494

Microwave-Assisted Synthesis of II-VI Semiconductor Micro- and Nanoparticles towards Sensor Applications  

E-Print Network [OSTI]

be tuned for application as sensors. ZnO is a direct bandgap semiconductor (3.37 eV) with a large exciton binding energy (60 meV) leading to photoluminescence (PL) at room temperature. A microwave-assisted hydrothermal approach allows the use of sub-5 nm...

Majithia, Ravish

2013-01-15T23:59:59.000Z

495

Enhanced von Weizscker Wang-Govind-Carter kinetic energy density functional for semiconductors  

SciTech Connect (OSTI)

We propose a new form of orbital-free (OF) kinetic energy density functional (KEDF) for semiconductors that is based on the Wang-Govind-Carter (WGC99) nonlocal KEDF. We enhance within the latter the semi-local von Weizscker KEDF term, which is exact for a single orbital. The enhancement factor we introduce is related to the extent to which the electron density is localized. The accuracy of the new KEDF is benchmarked against Kohn-Sham density functional theory (KSDFT) by comparing predicted energy differences between phases, equilibrium volumes, and bulk moduli for various semiconductors, along with metal-insulator phase transition pressures. We also compare point defect and (100) surface energies in silicon for a broad test of its applicability. This new KEDF accurately reproduces the exact non-interacting kinetic energy of KSDFT with only one additional adjustable parameter beyond the three parameters in the WGC99 KEDF; it exhibits good transferability between semiconducting to metallic silicon phases and between various III-V semiconductors without parameter adjustment. Overall, this KEDF is more accurate than previously proposed OF KEDFs (e.g., the Huang-Carter (HC) KEDF) for semiconductors, while the computational efficiency remains at the level of the WGC99 KEDF (several hundred times faster than the HC KEDF). This accurate, fast, and transferable new KEDF holds considerable promise for large-scale OFDFT simulations of metallic through semiconducting materials.

Shin, Ilgyou [Department of Chemistry, Princeton University, Princeton, New Jersey 08544-1009 (United States)] [Department of Chemistry, Princeton University, Princeton, New Jersey 08544-1009 (United States); Carter, Emily A., E-mail: eac@princeton.edu [Department of Mechanical and Aerospace Engineering, Program in Applied and Computational Mathematics, and Andlinger Center for Energy and the Environment, Princeton University, Princeton, New Jersey 08544-5263 (United States)

2014-05-14T23:59:59.000Z

496

Tailoring the Lasing Modes in Semiconductor Nanowire Cavities Using Intrinsic Self-Absorption  

E-Print Network [OSTI]

lasing with a high degree of mode selectivity (over 30 nm). The cadmium sulfide (CdS) NW lasing. Modification of semiconductor band structure/bandgap through electric field modulation, elemental doping success in tuning the optical cavity modes through (a) electric field modulation and (b) elemental doping

Xiong, Qihua

497

Hybrid structure laser based on semiconductor nanowires and a silica microfiber knot cavity  

E-Print Network [OSTI]

.1063/1.3093821 Semiconductor lasers based on cadmium sulfide CdS , zinc oxide ZnO , gallium nitride GaN nanowires, and gal-earth doped microfiber knot laser with knot diameter below 1 mm failed due to the insufficient pump absorption

Wu, Shin-Tson

498

A Study Of Semiconductor Quantum Dots In The Application To Terahertz Sensors  

E-Print Network [OSTI]

A Study Of Semiconductor Quantum Dots In The Application To Terahertz Sensors Raymond Davis M and referenced as part of background information used in this project. Raymond Davis October 1, 2011 ii #12 sensors. For detection of terahertz radia- tion we probe charge excitations of QDs caused

Sheldon, Nathan D.

499

Ferromagnetism in Doped Thin-Film Oxide and Nitride Semiconductors and Dielectrics  

SciTech Connect (OSTI)

The principal goal in the field of high-Tc ferromagnetic semiconductors is the synthesis, characterization and utilization of semiconductors which exhibit substantial carrier spin polarization at and above room temperature. Such materials are of critical importance in the emerging field of semiconductor spintronics. The interaction leading to carrier spin polarization, exchange coupling between the dopant spins and the valence or conduction band, is known to be sufficiently weak in conventional semiconductors, such as GaAs and Si, that magnetic ordering above cryogenic temperatures is essentially impossible. Since the provocative theoretical predictions of Tc above ambient in p-Mn:ZnO and p-Mn:GaN (T. Dietl et al., Science 287 1019 (2000)), and the observation of room-temperature ferromagnetism in Co:TiO2 anatase (Y. Matsumoto et al., Science 291 854 (2001)), there has been a flurry of work in oxides and nitrides doped with transition metals with unpaired d electrons. It has even been claimed that room-temperature ferromagnetism can be obtained in certain d0 transition metals oxides without a dopant. In this Report, the field of transition metal doped oxides and nitrides is critically reviewed and assessed from a materials science perspective. Since much of the field centers around thin film growth, this Report focuses on films prepared not only by conventional vacuum deposition methods, but also by spin coating colloidal nanoparticles.

Chambers, Scott A.

2006-10-01T23:59:59.000Z

500

Microbially-mediated method for synthesis of non-oxide semiconductor nanoparticles  

DOE Patents [OSTI]

The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component containing at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes during consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals. The invention is also directed to non-oxide semiconductor nanoparticle compositions produced as above and having distinctive properties.

Phelps, Tommy J.; Lauf, Robert J.; Moon, Ji Won; Rondinone, Adam J.; Love, Lonnie J.; Duty, Chad Edward; Madden, Andrew Stephen; Li, Yiliang; Ivanov, Ilia N.; Rawn, Claudia Jeanette

2014-06-24T23:59:59.000Z