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1

Ados Co Ltd Dong Yang Semiconductor | Open Energy Information  

Open Energy Info (EERE)

Ados Co Ltd Dong Yang Semiconductor Ados Co Ltd Dong Yang Semiconductor Jump to: navigation, search Name Ados Co Ltd (Dong Yang Semiconductor) Place Seoul, Seoul, Korea (Republic) Product Korean manufacturer of semiconductors; through Ersol's technology, will develop PV plants and begin to roll out crystalline silicon wafers and cells by H2 2007. Coordinates 37.557121°, 126.977379° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.557121,"lon":126.977379,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

2

Social Network in Dong Gang Tuna Market.  

E-Print Network (OSTI)

??Dong Gang are the biggest fresh tuna market in Taiwan. This thesis deals with the social networks in Dong Gang tuna market and how they (more)

Lin, Yi-Chen

2011-01-01T23:59:59.000Z

3

dong-99.PDF  

NLE Websites -- All DOE Office Websites (Extended Search)

25-Month Data Base of Stratus Cloud Properties 25-Month Data Base of Stratus Cloud Properties Generated from Ground-Based Measurements at the ARM SGP Site X. Dong Analytical Services and Materials, Inc. Hampton, Virginia P. Minnis Atmospheric Sciences Division National Aeronautics and Space Administration Langley Research Center Hampton, Virginia T. P. Ackerman, E. E. Clothiaux, and C. N. Long Department of Meteorology Pennsylvania State University University Park, Pennsylvania G. G. Mace Meteorology Department University of Utah Salt Lake City, Utah J. C. Liljegren Ames Laboratory Ames, Iowa Introduction Boundary layer stratiform clouds are important in the regulation of the earth's radiation budget and play an important role in climate over both land and ocean (Ramanathan et al. 1989). Boundary layer stratus

4

dong(2)-98.pdf  

NLE Websites -- All DOE Office Websites (Extended Search)

5 5 Validation of Cloud Microphysical Retrievals from Surface- and Satellite-Based Measurements Obtained During the Fall of 96 Penn State Aircraft Experiment X. Dong Analytical Services and Materials, Inc., Hampton, Virginia E. E. Clothiaux, N. Miles, J. Verlinde, and T. P. Ackerman The Pennsylvania State University University Park, Pennsylvania P. Minnis NASA-Langley Research Center Hampton, Virginia B. A. Albrecht University of Miami Miami, Florida Introduction Comparisons with aircraft in situ measurements are critically needed to quantify the uncertainties in Atmospheric Radiation Measurement (ARM) surface-and satellite-band retrievals of cloud properties. During the fall of 1996, measurements were made from a ground-based remote sensing site in central Pennsylvania in conjunction

5

DTU -DONG E&P RESEARCH PROJECT CATALOGUE  

E-Print Network (OSTI)

-shore platforms .................................................25 Storage of Natural Gas in Aquifers. Næumann, DONG E&P, jrnae@dongenergy.dk #12;27 Storage of Natural Gas in Aquifers DONG Energy owns of the storage is expected to increase in the future, because the distance to the sources of natural gas supply

Mosegaard, Klaus

6

Joyce Yang  

Energy.gov (U.S. Department of Energy (DOE))

Dr. Joyce Yang is a Physical Scientist with the Office of Energy Efficiency and Renewable Energy's Biomass Program.

7

Joyce Yang  

Energy.gov (U.S. Department of Energy (DOE))

Joyce Yang is Technology Development Manager for the Biomass Program in the Office of Energy Efficiency and Renewable Energy.

8

Wuhan Dongli Properties Co Ltd | Open Energy Information  

Open Energy Info (EERE)

Dongli Properties Co Ltd Dongli Properties Co Ltd Jump to: navigation, search Name Wuhan Dongli Properties Co Ltd Place Wuhan, Hubei Province, China Sector Solar Product Wuhan-based real estate developer that diversified into solar industry. Coordinates 30.572399°, 114.279121° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":30.572399,"lon":114.279121,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

9

Dong Energy London Array Limited Formerly known as CORE Ltd | Open Energy  

Open Energy Info (EERE)

Dong Energy London Array Limited Formerly known as CORE Ltd Dong Energy London Array Limited Formerly known as CORE Ltd Jump to: navigation, search Name Dong Energy London Array Limited (Formerly known as CORE Ltd) Place United Kingdom Sector Wind energy Product Dong Energy London Array Limited is a UK Joint Venture between Farm energy and Energi E2, involved in offshore wind farms in the outer Thames Estuary. References Dong Energy London Array Limited (Formerly known as CORE Ltd)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Dong Energy London Array Limited (Formerly known as CORE Ltd) is a company located in United Kingdom . References ↑ "Dong Energy London Array Limited (Formerly known as CORE Ltd)"

10

Woo-Sun Yang  

NLE Websites -- All DOE Office Websites (Extended Search)

Woo-Sun Yang Woo-Sun Yang Woo-Sun Yang Woo-Sun-Yang.jpg Woo-Sun Yang , Ph.D. HPC Consultant , WYang@lbl.gov Phone: (510) 486-5735 , Fax: (510) 486-4316 1 Cyclotron Road Mail Stop 943-256 Berkeley, CA 94720 Conference Papers Wendy Hwa-Chun Lin, Yun (Helen) He, and Woo-Sun Yang, "Franklin Job Completion Analysis", Cray User Group 2010 Proceedings, Edinburgh, UK, May 2010, Download File: cug2010JobComp.pdf (pdf: 429 KB) The NERSC Cray XT4 machine Franklin has been in production for 3000+ users since October 2007, where about 1800 jobs run each day. There has been an on-going effort to better understand how well these jobs run, whether failed jobs are due to application errors or system issues, and to further reduce system related job failures. In this paper, we talk about the

11

Xudong (Don) Yang  

NLE Websites -- All DOE Office Websites (Extended Search)

Don Yang Don Yang Chang-Jiang Professor Dept. of Building Science Tsinghua University, China xyang@tsinghua.edu.cn This speaker was a visiting speaker who delivered a talk or talks on the date(s) shown at the links below. This speaker is not otherwise associated with Lawrence Berkeley National Laboratory, unless specifically identified as a Berkeley Lab staff member. Xudong (Don) Yang is Chang-Jiang Professor in the Department of Building Science, Tsinghua University, China. He received his Ph.D. in Building Technology from MIT in 1999. He was a tenured associate professor in the U.S.A. before returning to Tsinghua University in 2006. His research aims at energy conservation technologies and environmental protection in built environment system. Dr. Yang is a co-author of the Technical Assessment

12

Yang-Mills redux  

E-Print Network (OSTI)

It is noted that a given pairing of the phase factor and gauge transformation to retain gauge symmetry is not unique. In their seminal paper, when Yang and Mills (YM) discuss the phase factor- gauge transformation relationship, they cite Paulis review paper. It is interesting that although Pauli in that paper presents the electromagnetic field strength in terms of a commutator, for whatever reason YM did not extrapolate the commutators use to obtain the Yang-Mills field strength they obtained it by trial and error. Presented is a derivation of this field strength using the commutator approach detailing how certain terms cancel each other. Finally, the Yang-Mills field transformation is derived in a slightly different way than is traditionally done. 1

Samuel L. Marateck

2006-01-01T23:59:59.000Z

13

Changgui Dong  

NLE Websites -- All DOE Office Websites (Extended Search)

Photovoltaic Installation Prices and Development Times: An Empirical Analysis of Solar Systems in California Cities., 2013. Download: Presentation PDF (1.68 MB); Report...

14

jYang : A YANG parser in java  

E-Print Network (OSTI)

The NETCONF con?guration protocol of the IETF Network Work- ing Group provides mechanisms to manipulate the con?guration of network devices. YANG is the language currently under consideration within the IETF to specify the data models to be used in NETCONF . This report describes the design and development of a syntax and semantics parser for YANG in java.

Nataf, Emmanuel

2009-01-01T23:59:59.000Z

15

Microsoft PowerPoint - DongHuang_ARMposter2009.ppt [Compatibility Mode]  

NLE Websites -- All DOE Office Websites (Extended Search)

cloud water distribution from an air-borne scanning microwave radiometer: cloud water distribution from an air-borne scanning microwave radiometer: Wakasa Bay field experiment results Dong Huang, Albin Gasiewski, and Warren Wiscombe 1. A mobile cloud tomography setup has some advantages over a fixed one. The tomographic method involves scanning clouds from a multiplicity of directions and locations, and inverting the resulting radiometric measurements to obtain 2D/3D cloud water distributions. A fixed ground-based setup will needed more than four microwave radiometers to secure an acceptable retrieval accuracy. With a mobile platform, a single radiometer can collect tomographic data of the Summary The cloud tomography field trial during the 2003 AMSR-E validation campaign shows that a single scanning microwave radiometer aboard a moving platform can provide useful data for cloud tomography retrieval. Observation system

16

Yang-Mills algebra.  

E-Print Network (OSTI)

Some unexpected properties of the cubic algebra generated by the covariant derivatives of a generic Yang-Mills connection over the (s+1)-dimensional pseudo Euclidean space are pointed out. This algebra is Gorenstein and Koszul of global dimension 3 but except for s=1 (i.e. in the 2-dimensional case) where it is the universal enveloping algebra of the Heisenberg Lie algebra and is a cubic Artin-Schelter regular algebra, it fails to be regular in that it has exponential growth. We give an explicit formula for the Poincare series of this algebra A and for the dimension in degree n of the graded Lie algebra of which A is the universal enveloping algebra. In the 4-dimensional (i.e. s=3) Euclidean case, a quotient of this algebra is the quadratic algebra generated by the covariant derivatives of a generic (anti) self-dual connection. This latter algebra is Koszul of global dimension 2 but is not Gorenstein and has exponential growth. It is the universal enveloping algebra of the graded Lie-algebra which is the semi-direct product of the free Lie algebra with three generators of degree one by a derivation of degree one.

Alain Connes; Michel Dubois-Violette.

17

Microsoft Word - Yang_seminar_012011.docx  

NLE Websites -- All DOE Office Websites (Extended Search)

January 20, 2011 4:00 pm Iran Thomas Auditorium, 8600 High performance organic and inorganic thin film solar cell via solution process Yang Yang Department of Materials Science and...

18

Semiconductors News  

Science Conference Proceedings (OSTI)

... Nhan Nguyen demonstrates how he performs optical measurements on a graphene-insulator-semiconductor sample structure. ...

2010-05-24T23:59:59.000Z

19

Women @ Energy: Joyce Yang | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Women @ Energy: Joyce Yang Women @ Energy: Joyce Yang Women @ Energy: Joyce Yang March 12, 2013 - 5:05pm Addthis Joyce Yang is a Technology Manager at DOE’s Bioenergy Technologies Office. Joyce Yang is a Technology Manager at DOE's Bioenergy Technologies Office. Joyce Yang is a Technology Manager at DOE's Bioenergy Technologies Office. In this role, she is focused on program planning and project management efforts on biochemical and catalytic conversion technologies to make renewable fuels and chemicals from biomass. Previously, Joyce led the algae to hydrocarbon fuel initiative. Her accomplishments include publishing the DOE National Algal Biofuels Technology Roadmap, serving on the External Advisory Board of the National Alliance for Advanced Biofuels and Bioproducts consortium, and chairing the Interagency Algae Working

20

Women @ Energy: Joyce Yang | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Joyce Yang Joyce Yang Women @ Energy: Joyce Yang March 12, 2013 - 5:05pm Addthis Joyce Yang is a Technology Manager at DOE’s Bioenergy Technologies Office. Joyce Yang is a Technology Manager at DOE's Bioenergy Technologies Office. Joyce Yang is a Technology Manager at DOE's Bioenergy Technologies Office. In this role, she is focused on program planning and project management efforts on biochemical and catalytic conversion technologies to make renewable fuels and chemicals from biomass. Previously, Joyce led the algae to hydrocarbon fuel initiative. Her accomplishments include publishing the DOE National Algal Biofuels Technology Roadmap, serving on the External Advisory Board of the National Alliance for Advanced Biofuels and Bioproducts consortium, and chairing the Interagency Algae Working

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Charles Nielsen; Jan Larsen; Kristian Morgen, DONG Energy, Kraftsvaerksvej 53, 7000 Fredericia, Denmark Security of supply, sustainability and the market are controlling parameters for developing the energy  

E-Print Network (OSTI)

for developing the energy system. Bioethanol is part of the solution to the question about security of supply the production of bioethanol with the energy production at power plants. Security of energy supplyBioethanol Charles Nielsen; Jan Larsen; Kristian Morgen, DONG Energy, Kraftsvaerksvej 53, 7000

22

2012 CERTS R&M Peer Review - Summary: Commercialization of the SuperOPF Framework - Hsiao-Dong Chiang  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Commercialization of the SuperOPF Framework: Phase 2 Commercialization of the SuperOPF Framework: Phase 2 Project Lead: Hsiao-Dong Chiang Co-investigators: Bin Wang, Patrick Causgrove, Ray Zimmerman 1. Project Objectives: The stochastic contingency-based security constrained AC Optimal Power Flow formulation behind the SuperOPF makes it very applicable to a variety of problems arising in power system planning and operations under deregulation. The ultimate goal of this project is to develop a commercial-grade SuperOPF in the context of co-optimization framework that correctly accounts for contingencies, ancillary services, static and dynamic constraints in determining both dispatch, price and operating reserve. This phase is focused on the following: (i) enhancing SuperOPF (into SuperOPF-VS

23

Yang-Mills Gravity in Biconformal Space  

E-Print Network (OSTI)

We propose a new conformal supergravity model with direct relevance to string/gauge theory dualities. This biconformal supergravity theory is formulated with a Yang-Mills type action. The resulting 8-dim symplectic geometries describe 4-dim scale-invariant general relativity. We then show an extension of N = 4 SUSY Yang-Mills to a curved biconformal geometry such that the extended form of the Yang-Mills fields provides the curvatures for the biconformal space. These curvatures solve the biconformal field equations whenever the original 4-dim fields satisfy the 4-dim YM theory. This gives a 1-1 mapping between the gravity and gauge theories. We also display systematic extension of any spacetime co-tangent bundle to a biconformal space, and extension of any 4-dim Yang-Mills theory to an equivalent theory on that space. 1

Lara B. Anderson; James T. Wheeler

2008-01-01T23:59:59.000Z

24

Yang- Mills on Quantum Heisenberg Manifolds  

E-Print Network (OSTI)

In the noncommutative geometry program of Connes there are two variations of the concept of Yang-Mills action functional. We show that for the quantum Heisenberg manifolds they agree.

Partha Sarathi Chakraborty; Satyajit Guin

2013-04-29T23:59:59.000Z

25

Semiconductor Analytics  

Science Conference Proceedings (OSTI)

... LED Lighting and Displays Solar PV Why Semiconductors? ... Potential Comments Solar PV 20.4 25-30% Politically driven. BP disaster will help. ...

2011-10-03T23:59:59.000Z

26

Gravity and Yang?Mills Fields: Geometrical Approaches  

Science Conference Proceedings (OSTI)

A new geometrical framework for a tetrad?affine formulation of gravity coupled with Yang?Mills fields is proposed.

Roberto Cianci; Stefano Vignolo

2005-01-01T23:59:59.000Z

27

Nonperturbative and analytical approach to Yang-Mills thermodynamics  

E-Print Network (OSTI)

An analytical, macroscopic approach to SU(N) Yang-Mills thermodynamics is developed, tested,and applied.

Ralf Hofmann

2004-04-29T23:59:59.000Z

28

Rotating Einstein-Yang-Mills Black Holes  

E-Print Network (OSTI)

We construct rotating hairy black holes in SU(2) Einstein-Yang-Mills theory. These stationary axially symmetric black holes are asymptotically flat. They possess non-trivial non-Abelian gauge fields outside their regular event horizon, and they carry non-Abelian electric charge. In the limit of vanishing angular momentum, they emerge from the neutral static spherically symmetric Einstein-Yang-Mills black holes, labelled by the node number of the gauge field function. With increasing angular momentum and mass, the non-Abelian electric charge of the solutions increases, but remains finite. The asymptotic expansion for these black hole solutions includes non-integer powers of the radial variable.

B. Kleihaus; J. Kunz; F. Navarro-Lerida

2002-07-10T23:59:59.000Z

29

Loop expansion in Yang-Mills thermodynamics  

E-Print Network (OSTI)

We argue that a selfconsistent spatial coarse-graining, which involves interacting (anti)calorons of unit topological charge modulus, implies that real-time loop expansions of thermodynamical quantities in the deconfining phase of SU(2) and SU(3) Yang-Mills thermodynamics are, modulo 1PI resummations, determined by a finite number of connected bubble diagrams.

Ralf Hofmann

2006-09-05T23:59:59.000Z

30

dong-98.pdf  

NLE Websites -- All DOE Office Websites (Extended Search)

all day. Data and Methods The ground-based measurements used in this study are the Pennsylvania State University 94-GHz cloud radar reflectivities (Clothiaux et al. 1995),...

31

Lisle, Dong, and Isensee  

Science Conference Proceedings (OSTI)

... of the HCI site home page, hammers pounded, hands moved, electricity zapped, etc ... with lower level browsers, we provided a more basic version of ...

32

Yang Keller and Brown MM 2012.pdf  

NLE Websites -- All DOE Office Websites (Extended Search)

Genomics Genomics on Pretreatment Inhibitor Tolerance of Zymomonas mobilis Shihui Yang, Martin Keller, and Steven D. Brown Contents 1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 2 Genome Annotation of ZM4 Using Systems Biology Studies . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 3 Identification of Genes Tolerant to Acetate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 3.1 nhaA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 3.2 hfq . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169 3.3 nhaA and hfq . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170 3.4 himA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170 4 Heterologous

33

YANG-MILLS THEORY FOR BUNDLE GERBES  

E-Print Network (OSTI)

Abstract. Given a bundle gerbe with connection on an oriented Riemannian manifold of dimension at least equal to 3, we formulate and study the associated Yang-Mills equations. When the Riemannian manifold is compact and oriented, we prove the existence of instanton solutions to the equations and also determine the moduli space of instantons, thus giving a complete analysis in this case. We also study duality in this context.

Varghese Mathai; David Roberts

2005-01-01T23:59:59.000Z

34

in Topological Yang-Mills Theory  

E-Print Network (OSTI)

We introduce the covariant forms for the non-Abelian anomaly counterparts in topological Yang-Mills theory, which satisfies the topological descent equation modulo terms that vanish at the space of BRST fixed points. We use the covariant anomalies as a new set of observables, which can absorb both ? W and ? BRS ghost number violations of zeromodes. Then, we study some problems due to the zero-modes originated from the reducible connections.

unknown authors

1992-01-01T23:59:59.000Z

35

Applications of Yang-Mills thermodynamics  

Science Conference Proceedings (OSTI)

We discuss the postulate that the U(1) gauge group describing photon propagation results from a dynamically broken SU(2) gauge theory. In the context of Yang-Mills thermodynamics such a symmetry breaking occurs via the non-trivial ground state. As a result of the interaction with the quasi particles of the theory the photon acquires an effective, temperature and momentum dependent, mass. We explain how this leads to modified black body spectra at temperatures of about 5 K. Furthermore, we discuss the properties and effects of an emergent longitudinal polarization.

Schwarz, Markus [Salierstr. 10.,76137 Karlsruhe (Germany)

2012-09-26T23:59:59.000Z

36

Fundamental and effective Yang-Mills vertices  

SciTech Connect

Calorons and plane waves within and in between them collectively give rise to a thermal ground state. The latter provides a homgeneous energy density and a negative pressure, and it induces quasiparticle masses to part of the propagating spectrum of deconfining SU(2) Yang-Mills thermodynamics (dynamical gauge-symmetry breaking). In the present talk we discuss the role of a single caloron in inducing effective local vertices, characterized by powers of h, mediating the interaction of plane waves which propagate over large distances. The constraints on momentum transfers through effective 4-vertices are revisited.

Hofmann, Ralf [ITP, Universitaet Heidelberg, Philosophenweg 16, 69120 Heidelberg (Germany)

2012-09-26T23:59:59.000Z

37

Yang-Mills Propagators and QCD  

E-Print Network (OSTI)

We present a strong coupling expansion that permits to develop analysis of quantum field theory in the infrared limit. Application to a quartic massless scalar field gives a massive spectrum and the propagator in this regime. We extend the approach to a pure Yang-Mills theory obtaining analogous results. The gluon propagator is compared satisfactorily with lattice results and similarly for the spectrum. Comparison with experimental low energy spectrum of QCD supports the view that $\\sigma$ resonance is indeed a glueball. The gluon propagator we obtained is finally used to formulate a low energy Lagrangian for QCD that reduces to a Nambu-Jona-Lasinio model with all the parameters fixed by those of the full theory.

Marco Frasca

2008-07-27T23:59:59.000Z

38

Microsoft Word - Yang_first.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

Number Number 1 Innovative Biological Solutions to Challenges 2 in Sustainable Biofuels Production 3 Xiaohan Yang 1,2 et al. * 4 1 Biosciences Division, Oak Ridge National Laboratory 5 2 BioEnergy Science Center, Oak Ridge National Laboratory, Oak Ridge 6 1,2,4 USA 7 1. Introduction 8 The rising prices, declining supplies, and concerns about environmental safety and energy 9 security associated with the use of fossil fuels are driving the development and use of 10 biofuels (Gonzalez-Garcia et al., 2010; Markevicius et al., 2010; Singh et al., 2010; Sahin, 2011). 11 Biofuels in general can be defined as liquid, gas and solid fuels predominantly produced 12 from biomass (Demirbas, 2008). In this chapter, we will specifically focus on liquid biofuels

39

Radiative Corrections in Yang-Mills thermodynamics  

Science Conference Proceedings (OSTI)

We provide arguments why the loop expansion of the pressure in the effective theory for the deconfining phase of SU(2) Yang-Mills thermodynamics is likely to terminate at a finite order despite the fact that the effective gauge coupling is large (e{>=}{radical}(8){pi}). Each order l of the expansion measures the lth power of the fraction of a typical residual action of the quantum fluctuation in one loop S{sub l} and h. Here S{sub l} rapidly decreases with l. This is demonstrated by a computation of irreducible 2-loop and 3-loop diagrams which correct the pressure of free quasiparticles radiatively. In fact, at the three-loop level, one diagram vanishes identically. By benchmarking with known 2-loop results we show that the Monte-Carlo method used to compute on the 3-loop level is reliable.

Kaviani, Dariush [IPPP, University of Durham, South Rd, Durham DH1 3LE (United Kingdom)

2011-09-22T23:59:59.000Z

40

Tianjin Tai Yang Photo electronic Technology Co Ltd | Open Energy...  

Open Energy Info (EERE)

Place Tianjin Municipality, China Sector Solar Product China-based CIGS thin-film solar cell maker. References Tianjin Tai Yang Photo-electronic Technology Co., Ltd1 LinkedIn...

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

SU(2) Yang-Mills thermodynamics and photon physics  

E-Print Network (OSTI)

Based on quantitative predictions enabled by a nonperturbative approach to Yang-Mills thermodynamics it is explained why the physics of photon {\\sl propagation} is not unlikely rooted in pure SU(2) gauge dynamics.

Ralf Hofmann

2007-10-05T23:59:59.000Z

42

Analytical approach to nonperturbative Yang-Mills thermodynamics  

E-Print Network (OSTI)

An analytical and inductive approach to hot SU(N) Yang-Mills dynamics is developed. For N=2,3 pressure and energy density are pointwise compared with lattice data.

Ralf Hofmann

2003-12-03T23:59:59.000Z

43

Photoelectrosynthesis at semiconductor electrodes  

DOE Green Energy (OSTI)

The general principles of photoelectrochemistry and photoelectrosynthesis are reviewed and some new developments in photoelectrosynthesis are discussed. Topics include energetics of semiconductor-electrolyte interfaces(band-edge unpinning); hot carrier injection at illuminated semiconductor-electrolyte junctions; derivatized semiconductor electrodes; particulate photoelectrochemical systems; layered compounds and other new materials; and dye sensitization. (WHK)

Nozik, A. J.

1980-12-01T23:59:59.000Z

44

Spire Semiconductor formerly Bandwidth Semiconductor LLC | Open Energy  

Open Energy Info (EERE)

Semiconductor formerly Bandwidth Semiconductor LLC Semiconductor formerly Bandwidth Semiconductor LLC Jump to: navigation, search Name Spire Semiconductor (formerly Bandwidth Semiconductor LLC) Place Hudson, New Hampshire Zip 3051 Product Spire-owned US-based manufacturer of gallium-arsenide (GaAs) cells; offers design and manufacturing capabilities of concentrator cells. References Spire Semiconductor (formerly Bandwidth Semiconductor LLC)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Spire Semiconductor (formerly Bandwidth Semiconductor LLC) is a company located in Hudson, New Hampshire . References ↑ "Spire Semiconductor (formerly Bandwidth Semiconductor LLC)" Retrieved from "http://en.openei.org/w/index.php?title=Spire_Semiconductor_formerly_Bandwidth_Semiconductor_LLC&oldid=351621"

45

Unitary lens semiconductor device  

DOE Patents (OSTI)

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

Lear, Kevin L. (Albuquerque, NM)

1997-01-01T23:59:59.000Z

46

Topologically Massive Yang-Mills Theory and Link Invariants  

E-Print Network (OSTI)

Topologically massive Yang-Mills theory is studied in the framework of geometric quantization. This theory has a mass gap that is proportional to the topological mass m. Due to the existence of this mass gap, Yang-Mills contribution dies at very large distances compared to 1/m, leaving a pure Chern-Simons theory with level number k. In this paper, an intermediate region is studied where the distance is large enough, so the theory is almost topological, but not infinitely large, so there is still a small contribution from Yang-Mills. It is shown that, this almost topological theory consists of two copies of Chern-Simons, each with level number k/2. As m approaches infinity, they add up to give the original Chern-Simons term with level k. Also, reduction of the phase space is discussed in this limit. Then finally, a relation between the observables of topologically massive Yang-Mills theory and Chern-Simons theory is shown. This allows one to use skein relations to calculate topologically massive Yang-Mills theory observables at large but finite distances.

Tuna Yildirim

2013-11-08T23:59:59.000Z

47

Black Holes, q-Deformed 2d Yang-Mills, and Non-perturbative Topological Strings  

E-Print Network (OSTI)

Two-dimensional Yang-Mills, black holes and topologicalfor the two- dimensional black hole, Nucl. Phys. B 622 (LBNL- 56688 Black Holes, q-Deformed 2d Yang-Mills, and Non-

Aganagic, Mina

2009-01-01T23:59:59.000Z

48

The Yang-Mills theory as a massless limit of a massive nonabelian gauge model  

E-Print Network (OSTI)

A gauge invariant infrared regularization of the Yang-Mills theory applicable beyond perturbation theory is constructed.

A. A. Slavnov

2012-12-13T23:59:59.000Z

49

Hochschild and cyclic homology of Yang-Mills algebras.  

E-Print Network (OSTI)

The aim of this article is to compute the Hochschild and cyclic homology groups of Yang-Mills algebras, that have been defined by A. Connes and M. Dubois-Violette. We proceed here the study of these algebras that we have initiated in a previous article. The computation involves the use of a spectral sequence associated to the natural filtration on the enveloping algebra of the Lie Yang-Mills algebra. This filtration in provided by a Lie ideal which is free as Lie algebra.

Estanislao Herscovich; Andrea Solotar

50

Uranium Oxide Semiconductors  

NLE Websites -- All DOE Office Websites (Extended Search)

of semiconductors, it would consume the annual production rate of depleted uranium from uranium enrichment facilities. For more information: PDF Semiconductive Properties of...

51

Horizon Properties of Einstein-Yang-Mills Black Hole  

E-Print Network (OSTI)

We consider static axially symmetric Einstein-Yang-Mills black holes in the isolated horizon formalism. The mass of these hairy black holes is related to the mass of the corresponding particle-like solutions by the horizon mass. The hairy black holes violate the ``quasi-local uniqueness conjecture'', based on the horizon charges.

B. Kleihaus; J. Kunz; A. Sood; M. Wirschins

2001-10-19T23:59:59.000Z

52

Non-Abelian strings in supersymmetric Yang-Mills  

Science Conference Proceedings (OSTI)

I give a broad review of novel phenomena discovered in certain Yang-Mills theories: non-Abelian strings and confined monopoles. Then I explain how these phenomena allow one to study strong dynamics of gauge theories in four dimensions from two-dimensional models emerging on the string world sheet.

Shifman, M. [William I. Fine Theoretical Physics Institute, University of Minnesota, Minneapolis, MN 55455 (United States)

2012-09-26T23:59:59.000Z

53

Theory of Semiconductor Laser Cooling .  

E-Print Network (OSTI)

??Recently laser cooling of semiconductors has received renewed attention, with the hope that a semiconductor cooler might be able to achieve cryogenic temperatures. In order (more)

Rupper, Greg

2010-01-01T23:59:59.000Z

54

dong(2)-99.PDF  

NLE Websites -- All DOE Office Websites (Extended Search)

Research Center Hampton, Virginia G. G. Mace Meteorology Department University of Utah Salt Lake City, Utah E. E. Clothiaux Department of Meteorology The Pennsylvania State...

55

Tilson, Dong, Martin, and Kieke  

Science Conference Proceedings (OSTI)

... is taking off both in terms of the ... Whether participants used the search or followed links ... One participant wanted to enter information about size and ...

56

dong(3)-98.pdf  

NLE Websites -- All DOE Office Websites (Extended Search)

quantities will require much additional investigation. Reference Ayers, J. K., L. Nguyen, W. L. Smith, Jr., and P. Minnis, 1998: Calibration of geostationary satellite imager...

57

Dr. DongHun Yeo  

Science Conference Proceedings (OSTI)

... the development of Database-Assisted Design for High-Rise Structures (HR_DAD) software, the optimization of embodied energy in reinforced ...

2013-03-21T23:59:59.000Z

58

Ferromagnetism in Oxide Semiconductors  

SciTech Connect

In order to become a practical technology, semiconductor spintronics requires the discovery and utilization of ferromagnetic semiconductors which exhibit spin polarization in the majority carrier band at and above room temperature. Intrinsic remanent magnetization would allow spin polarized currents to be propagated in such materials without the need for a continuous magnetic field. However, the discovery and understanding of such materials is proving to be a grand challenge in solid-state science. Indeed, one of the 125 critical unanswered scientific questions recently posed in Science magazine asks, Is it possible to create magnetic semiconductors that work at room temperature?

Chambers, Scott A.; Droubay, Timothy; Wang, Chong M.; Rosso, Kevin M.; Heald, Steve M.; Schwartz, S. A.; Kittilstved, Kevin R.; Gamelin, Daniel R.

2006-11-01T23:59:59.000Z

59

Mixed Semiconductor Nanocrystal Compositions  

NLE Websites -- All DOE Office Websites (Extended Search)

Mixed Semiconductor Nanocrystal Compositions Mixed Semiconductor Nanocrystal Compositions Mixed Semiconductor Nanocrystal Compositions Composition comprising one or more energy donors and one or more energy acceptors. Available for thumbnail of Feynman Center (505) 665-9090 Email Mixed Semiconductor Nanocrystal Compositions Composition comprising one or more energy donors and one or more energy acceptors, wherein energy is transferred from the energy donor to the energy acceptor and wherein: the energy acceptor is a colloidal nanocrystal having a lower band gap energy than the energy donor; the energy donor and the energy acceptor are separated by a distance of 40 nm or less; wherein the average peak absorption energy of the acceptor is at least 20 meV greater than the average peak emission energy of the energy donor; and

60

Photoelectrochemical etching of semiconductors  

Science Conference Proceedings (OSTI)

Photoelectrochemical (PEC) etching of III-V semiconductors has been used to fabricate unique structures in electronic and photonic devices, such as integral lenses on light-emitting diodes, gratings on laser structures, and through-wafer via connections ...

P. A. Kohl

1998-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Reflection-Transmission Quantum Yang-Baxter Equations  

E-Print Network (OSTI)

We explore the reflection-transmission quantum Yang-Baxter equations, arising in factorized scattering theory of integrable models with impurities. The physical origin of these equations is clarified and three general families of solutions are described in detail. Explicit representatives of each family are also displayed. These results allow to establish a direct relationship with the different previous works on the subject and make evident the advantages of the reflection-transmission algebra as an universal approach to integrable systems with impurities.

V. Caudrelier; M. Mintchev; E. Ragoucy; P. Sorba

2004-12-15T23:59:59.000Z

62

Method of doping a semiconductor  

DOE Patents (OSTI)

A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

Yang, Chiang Y. (Miller Place, NY); Rapp, Robert A. (Columbus, OH)

1983-01-01T23:59:59.000Z

63

Hydrogen in semiconductors  

DOE Green Energy (OSTI)

After an incubation'' period in the 1970's and early 80's, during which the first hydrogen related centers were discovered and characterized in ultra-pure germanium, a sharp increase of research activity occurred after the discovery of shallow acceptor passivation in crystalline silicon. The aim of this review is to convey an insight into the rich, multifaceted physics and materials science which has emerged from the vast variety of experimental and theoretical studies of hydrogen in semiconductors. In order to arrive at the current understanding of hydrogen related phenomena in a logical way, each chapter will start with a brief review of the major experimental and theoretical advances of the past few years. Those who are interested to learn more about this fascinating area of semiconductor research are referred to reviews, to a number of conference proceedings volumes, and to an upcoming book which will contain authoritative chapters on most aspects of hydrogen in crystalline semiconductors. Some of the early art of semiconductor device processing can finally be put on a scientific foundation and new ways of arriving at advanced device structures begin to use what we have learned from the basic studies of hydrogen in semiconductors. 92 refs., 8 figs.

Haller, E.E. (California Univ., Berkeley, CA (USA) Lawrence Berkeley Lab., CA (USA))

1990-06-01T23:59:59.000Z

64

Light-matter Interactions in Semiconductor Nanostructures  

Science Conference Proceedings (OSTI)

Light-matter interactions in Semiconductor Nanostructures. ... We investigate the interaction of light with semiconductor-based nanostructures. ...

2012-05-30T23:59:59.000Z

65

Stabilizing perturbative Yang-Mills thermodynamics with Gribov quantization  

E-Print Network (OSTI)

We evaluate the thermodynamic quantities of Yang-Mills theory using the Gribov quantization, which deals with nonperturbative resummation. The magnetic scale is automatically incorporated into the framework and we find it efficient to stabilize the perturbative expansion of the free energy. In the temperature range $T=T_c \\sim 2\\,T_c$ the major uncertainty in our results comes from the nonperturbative running coupling that is adopted from the lattice simulation, while the convergence above $2\\,T_c$ is impressively robust. We also present the corresponding interaction measure (i.e., trace anomaly) up to close to $T_c$.

Kenji Fukushima; Nan Su

2013-04-30T23:59:59.000Z

66

Fusion hierarchies for N = 4 superYang-Mills theory  

E-Print Network (OSTI)

We employ the analytic Bethe Anzats to construct eigenvalues of transfer matrices with finite-dimensional atypical representations in the auxiliary space for the putative long-range spin chain encoding anomalous dimensions of all composite single-trace gauge invariant operators of the maximally supersymmetric Yang-Mills theory. They obey an infinite fusion hierarchy which can be reduced to a finite set of integral relations for a minimal set of transfer matrices. This set is used to derive a finite systems of functional equations for eigenvalues of nested Baxter polynomials.

A. V. Belitsky

2008-03-13T23:59:59.000Z

67

Thermal Green's functions of the energy-momentum tensor and transport coefficients of the SU(3) Yang-Mills gas  

E-Print Network (OSTI)

Thermal Green's functions of the energy-momentum tensor and transport coefficients of the SU(3) Yang-Mills gas

Karsch, Frithjof

1987-01-01T23:59:59.000Z

68

Amorphous semiconductor solar cell  

SciTech Connect

A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

Dalal, Vikram L. (Newark, DE)

1981-01-01T23:59:59.000Z

69

Kansas Advanced Semiconductor Project  

SciTech Connect

KASP (Kansas Advanced Semiconductor Project) completed the new Layer 0 upgrade for D0, assumed key electronics projects for the US CMS project, finished important new physics measurements with the D0 experiment at Fermilab, made substantial contributions to detector studies for the proposed e+e- international linear collider (ILC), and advanced key initiatives in non-accelerator-based neutrino physics.

Baringer, P.; Bean, A.; Bolton, T.; Horton-Smith, G.; Maravin, Y.; Ratra, B.; Stanton, N.; von Toerne, E.; Wilson, G.

2007-09-21T23:59:59.000Z

70

Compound semiconductor MOSFETs  

Science Conference Proceedings (OSTI)

Enhancement mode, high electron mobility MOSFET devices have been fabricated using an oxide high-@k gate dielectric stack developed using molecular beam epitaxy. A template layer of Ga"2O"3, initially deposited on the surface of the III-V device unpins ... Keywords: Compound semiconductors, GaAs gate dielectric, III-V MOSFETs

R. Droopad; K. Rajagopalan; J. Abrokwah; P. Zurcher; M. Passlack

2007-09-01T23:59:59.000Z

71

Classical properties of the non-abelian Yang-Mills theories  

E-Print Network (OSTI)

We present some classical properties of the non-abelian Yang-Mills theories that we obtain directly from the Maxwells equations of the SU(3) Yang-Mills theory. To do it we first examine under which conditions the equations of motion for the SU(3) Yang-Mills theory have the same form as those of the classical electrodynamics. Next we write the equations of motion for the SU(3) Yang-Mills theory using the language of the Maxwells equations. We show that electric and magnetic non-abelian fields, whose origin is not fermionic, are present in the non-abelian Yang-Mills theories. The non-abelian gauge fields can be assumed as the sources of these electric and magnetic fields. Finally we show how the non-abelian gauge fields are also the responsible for the existence of magnetic monopoles in this kind of theories.

J. A. Snchez-monroy; C. Quimbay

2007-01-01T23:59:59.000Z

72

Woo-Sun Yang! NERSC User Services Group  

NLE Websites -- All DOE Office Websites (Extended Search)

Yang! Yang! NERSC User Services Group Debugging with DDT --- 1 --- February 1 5, 2 013 Why a debugger? * Your c ode f ails a nd y ou w ant t o k now w hy * You c ontrol t he p ace o f r unning t he c ode a nd e xamine execu@on fl ow o r v ariables t o s ee i f i t i s r unning a s expected ( beDer t han a p rint s tatement!) * Typical s cenario - Set a p lace i n y our p rogram w here y ou w ant y our p rogram t o stop e xecu7on - Let y our p rogram r un u n7l t he p lace i s r eached - Check v ariables * Gdb i s g ood b ut w e n eed t o c ontrol m ul@ple p rocessors for a p arallel p rogram --- 2 --- DDT * Distributed D ebugging T ool b y A llinea * Graphical d ebugger c apable o f d ebugging - Serial - MPI - OpenMP - CAF - UPC - CUDA ( NERSC d oesn't h ave a l icense o n D irac) * Intui@ve a nd s imple u ser i nterfaces * Available o n H opper,

73

Definition: Semiconductor | Open Energy Information  

Open Energy Info (EERE)

Semiconductor Semiconductor Jump to: navigation, search Dictionary.png Semiconductor Any material that has a limited capacity for conducting an electric current. Certain semiconductors, including silicon, gallium arsenide, copper indium diselenide, and cadmium telluride, are uniquely suited to the photovoltaic conversion process.[1] View on Wikipedia Wikipedia Definition A semiconductor is a material which has electrical conductivity to a degree between that of a metal (such as copper) and that of an insulator (such as glass). Semiconductors are the foundation of modern solid state electronics, including transistors, solar cells, light-emitting diodes (LEDs), quantum dots and digital and analog integrated circuits. A semiconductor may have a number of unique properties, one of which is the

74

Improvement of Electrical Resistivity by Inserting the Graphene Film ...  

Science Conference Proceedings (OSTI)

Presentation Title, Improvement of Electrical Resistivity by Inserting the Graphene Film between Al doped ZnO Thin Films. Author(s), Jeong Do Yang, Dong-Hee...

75

Light amplification using semiconductors  

Science Conference Proceedings (OSTI)

During the summer of 1953, John von Neumann discussed his ideas concerning light amplification using semiconductors with Edward Teller. In September of that year, von Neumann sent a manuscript containing his ideas and calculations on this subject to Teller for his comments. To the best of our knowledge, von Neumann did not take time to work further on these ideas, and the manuscript remained unpublished. These previously unpublished writings of John von Neumann on the subject of light amplification in semiconductors are printed as a service to the laser community. While von Neumann's original manuscript and his letter to Teller are available to anyone who visits the Library of Congress, it is much more convenient to have this paper appear in an archival journal.

Dupuis, R.D.

1987-06-01T23:59:59.000Z

76

Isotopically controlled semiconductors  

SciTech Connect

The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

Haller, Eugene E.

2006-06-19T23:59:59.000Z

77

Chiral symmetry and the Yang--Mills gradient flow  

E-Print Network (OSTI)

In the last few years, the Yang--Mills gradient flow was shown to be an attractive tool for non-perturbative studies of non-Abelian gauge theories. Here a simple extension of the flow to the quark fields in QCD is considered. As in the case of the pure-gauge gradient flow, the renormalizability of correlation functions involving local fields at positive flow times can be established using a representation through a local field theory in 4+1 dimensions. Applications of the extended flow in lattice QCD include non-perturbative renormalization and O(a) improvement as well as accurate calculations of the chiral condensate and of the pseudo-scalar decay constant in the chiral limit.

Martin Lscher

2013-02-21T23:59:59.000Z

78

Microsoft PowerPoint - An Integrated Study_Yang  

NLE Websites -- All DOE Office Websites (Extended Search)

Study on the Novel Thermal Barrier Coating Study on the Novel Thermal Barrier Coating for Nb-based High Temperature Alloy Shizhong Yang, Ebrahim Khosravi Southern University and A & M College 6/12/2013 Pittsburgh, PA Outline *Introduction *Simulation and Experiment Results *Future work *Acknowledgement Introduction * Project Period: 10/1/2011 ~ 9/30/2013 * Project Manager: Richard Dunst * Project Objectives: (1) Perform interface energy and HPC simulation on the bond coat/Nb-based alloy and top coat/bond coat models to screen out the potential bond coat candidates. (2). Study the high temperature properties and the oxidation resistance capabilities through molecular dynamics simulation. (3). Perform experiments on the oxidation resistance of the most promising systems from the simulation. The isothermal oxidation and corrosiveness

79

Skutterudite Thermoelectric Materials Jihui Yang, Xun Shi, General Motors  

NLE Websites -- All DOE Office Websites (Extended Search)

the Microstructure of Doped Clathrate and the Microstructure of Doped Clathrate and Skutterudite Thermoelectric Materials Jihui Yang, Xun Shi, General Motors Hsin Wang and Miaofang Chi, Oak Ridge National Laboratory Scientific challenge/problem: Clathrate and Skutterudite are known to be promising thermoelectric materials. The R&D groups at GM and ORNL have found that doping Clathrate (Ba 0.25 Co 4 Sb 12 ) with Yb and La and doping Skutterudite (Ba 8 Ga 16 Ge 30 ) with Ni improve the thermoelectrical properties significantly. The goal of the microscopy characterization is to fundamentally understand how the dopants control the materials properties. Two questions need to be answered at the current stage of our experimental work: how the microstructures are tailored by the dopants and how the dopants distribute

80

Microsoft PowerPoint - Novel Nano-size_Yang  

NLE Websites -- All DOE Office Websites (Extended Search)

Nano-size Oxide Dispersion Nano-size Oxide Dispersion Strengthened Steels Development through Computational and Experimental Study Shizhong Yang, Ebrahim Khosravi Southern University and A & M College 6/12/2013 Pittsburgh, PA Outline Introduction Methods Preliminary Results Future Work Acknowledgement Introduction * Project Period: 6/1/2012 --- 5/31/2015 * Project Manager: Vito Cedro * Project Objectives: (1). Perform interface energy and molecular dynamics/Monte Carlo HPC simulation on the ODS models to screen out the potential high temperature and high pressure ODS candidates. (2). Perform experiments on the high temperature and high pressure property of the most promising ODS systems from the simulation. (3). Students/postdocs training. Introduction 1. The oxide dispersion strengthened (ODS) steel alloys have higher

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Dual superconductivity and vacuum properties in Yang--Mills theories  

E-Print Network (OSTI)

We address, within the dual superconductivity model for color confinement, the question whether the Yang-Mills vacuum behaves as a superconductor of type I or type II. In order to do that we compare, for the theory with gauge group SU(2), the determination of the field penetration depth $\\lambda$ with that of the superconductor correlation length $\\xi$. The latter is obtained by measuring the temporal correlator of a disorder parameter developed by the Pisa group to detect dual superconductivity. The comparison places the vacuum close to the border between type I and type II and marginally on the type II side. We also check our results against the study of directly measurable effects such as the interaction between two parallel flux tubes, obtaining consistent indications for a weak repulsive behaviour. Future strategies to improve our investigation are discussed.

A. D'Alessandro; M. D'Elia; L. Tagliacozzo

2006-07-12T23:59:59.000Z

82

Dual Superconductivity from Yang-Mills Theory via Connection Decomposition  

E-Print Network (OSTI)

We derive an Abelian-Higgs-like action from SU(2) Yang-Mills theory via monopole-condensation assumption. Abelian projection as well as chromo-'electric-magnetic' duality are naturally realized by separating the small off-diagonal gluon part from diagonal gluon field according to the order of inverse coupling constant($1/g$). It is shown that Abelian dominance can follow from infrared behavior of ranning coupling constant and the mass generation of chromo-electric field as well as off-diagonal gluon is due to the quantum fluctuation of orientation of Abelian direction. Dual superconductivity of theory vacuum is confirmed by deriving dual London equation for chromo-electronic field.

Duoje Jia

2005-09-03T23:59:59.000Z

83

Method of passivating semiconductor surfaces  

DOE Patents (OSTI)

A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Wanlass, Mark W. (Golden, CO)

1990-01-01T23:59:59.000Z

84

Method of passivating semiconductor surfaces  

DOE Patents (OSTI)

A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Wanlass, M.W.

1990-06-19T23:59:59.000Z

85

Semiconductor devices incorporating multilayer interference regions  

DOE Patents (OSTI)

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

1987-08-31T23:59:59.000Z

86

Analytic calculation of Witten index in D= 2 supersymmetric Yang-Mills quantum mechanics  

Science Conference Proceedings (OSTI)

We evaluate analytically the Witten index of D= 2 supersymmetric Yang-Mills quantum mechanics. We rederive a known result for the SU(2) gauge group and generalize it to any SU(N) gauge group.

Korcyl, Piotr [M. Smoluchowski Institute of Physics, Jagiellonian University, Reymonta 4, 30-059 Krakow (Poland)

2012-10-15T23:59:59.000Z

87

Radiation of a circulating quark in strongly coupled N = 4 super Yang-Mills theory  

E-Print Network (OSTI)

The energy density and angular distribution of power radiated by a quark undergoing circular motion in strongly coupled N? = ?4 supersymmetric Yang?Mills (SYM) theory is computed using gauge?gravity duality. The results ...

Athanasiou, Christiana

88

Yang-Mills Theory Constructed from ChoFaddeevNiemi Decomposition  

E-Print Network (OSTI)

We give a new way of looking at the ChoFaddeevNiemi (CFN) decomposition of the Yang-Mills theory to answer how the enlarged local gauge symmetry respected by the CFN variables is restricted to obtain another Yang-Mills theory with the same local and global gauge symmetries as the original Yang-Mills theory. This may shed new light on the fundamental issue of the discrepancy between two theories for independent degrees of freedom and the role of the Maximal Abelian gauge in Yang-Mills theory. As a byproduct, this consideration gives new insight into the meaning of the gauge invariance and the observables, e.g., a gauge-invariant mass term and vacuum condensates of mass dimension two. We point out the implications for the SkyrmeFaddeev model.

Kei-ichi Kondo; Takeharu Murakami; Toru Shinohara

2006-01-01T23:59:59.000Z

89

On the Solution of Elliptic Problems on Overset/YinYang Grids  

Science Conference Proceedings (OSTI)

The heterogeneity and the singularity of the grid are major factors in the weak scalability of longitudelatitude gridbased atmospheric models on massively parallel machines. Overset grids and, in particular, the YinYang grid, are potential ...

M. Zerroukat; T. Allen

2012-08-01T23:59:59.000Z

90

Dynamical Core of an Atmospheric General Circulation Model on a YinYang Grid  

Science Conference Proceedings (OSTI)

The three-dimensional dynamical core of an atmospheric general circulation model employing YinYang grid is developed and examined. Benchmark test cases based on the shallow-water model configuration are first performed to examine the validity of ...

Yuya Baba; Keiko Takahashi; Takeshi Sugimura; Koji Goto

2010-10-01T23:59:59.000Z

91

Fusion procedure for the Yang-Baxter equation and Schur-Weyl duality  

E-Print Network (OSTI)

We first review the fusion procedure for an arbitrary solution of the Yang-Baxter equation and the study of distinguished invariant subspaces for the fused solutions. Then we apply these general results to four particular solutions: the Yang solution, its standard deformation and their generalizations for super vector spaces. For the Yang solution, respectively, its "super" generalization, we explain how, using the fusion formula for the symmetric group together with the (super) Schur-Weyl duality, the fusion procedure allows to construct a family of fused solutions of the Yang-Baxter equation acting on irreducible representations of the general linear Lie algebra, respectively, of the general linear Lie superalgebra. For the deformations of the two previous solutions, we use the fusion formula for the Hecke algebra together with the (super) quantum Schur--Weyl duality to obtain fused solutions acting on irreducible representations of the quantum groups associated to the general linear Lie (super)algebras.

L. Poulain d'Andecy

2013-07-25T23:59:59.000Z

92

Isotopically controlled semiconductors  

SciTech Connect

Semiconductor bulk crystals and multilayer structures with controlled isotopic composition have attracted much scientific and technical interest in the past few years. Isotopic composition affects a large number of physical properties, including phonon energies and lifetimes, bandgaps, the thermal conductivity and expansion coefficient and spin-related effects. Isotope superlattices are ideal media for self-diffusion studies. In combination with neutron transmutation doping, isotope control offers a novel approach to metal-insulator transition studies. Spintronics, quantum computing and nanoparticle science are emerging fields using isotope control.

Haller, Eugene E.

2001-12-21T23:59:59.000Z

93

Layered semiconductor neutron detectors  

SciTech Connect

Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

Mao, Samuel S; Perry, Dale L

2013-12-10T23:59:59.000Z

94

Climate VISION: Private Sector Initiatives: Semiconductors: Resources...  

Office of Scientific and Technical Information (OSTI)

FederalState Programs PFC ReductionClimate Partnership for the Semiconductor Industry Launched in 1996 in collaboration with the Semiconductor Industry Association, EPA's PFC...

95

Method Of Transferring Strained Semiconductor Structures  

NLE Websites -- All DOE Office Websites (Extended Search)

Of Transferring Strained Semiconductor Structures Of Transferring Strained Semiconductor Structures Method Of Transferring Strained Semiconductor Structures The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. June 25, 2013 Method Of Transferring Strained Semiconductor Structures The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. Available for thumbnail of Feynman Center (505) 665-9090 Email Method Of Transferring Strained Semiconductor Structures The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having

96

Sandia National Labs: PCNSC: Research: Compound Semiconductor...  

NLE Websites -- All DOE Office Websites (Extended Search)

Compound Semiconductor Science and Technology Thrust The Physical, Chemical, and Nano Sciences Center's vision for Compound Semiconductors is to develop the science of compound...

97

Surface-invariants in 2D classical Yang-Mills theory  

Science Conference Proceedings (OSTI)

We study a method to obtain invariants under area-preserving diffeomorphisms associated to closed curves in the plane from classical Yang-Mills theory in two dimensions. Taking as starting point the Yang-Mills field coupled to nondynamical particles carrying chromo-electric charge, and by means of a perturbative scheme, we obtain the first two contributions to the on-shell action, which are area-invariants. A geometrical interpretation of these invariants is given.

Diaz, Rafael; Fuenmayor, E.; Leal, Lorenzo [Escuela de Matematicas, Facultad de Ciencias, Universidad Central de Venezuela, AP 20513, Caracas 1020-A (Venezuela); Centro de Fisica Teorica y Computacional, Facultad de Ciencias, Universidad Central de Venezuela, AP 47270, Caracas 1041-A (Venezuela)

2006-03-15T23:59:59.000Z

98

Variable temperature semiconductor film deposition  

DOE Patents (OSTI)

A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Li, X.; Sheldon, P.

1998-01-27T23:59:59.000Z

99

Nanostructures, magnetic semiconductors and spintronics  

Science Conference Proceedings (OSTI)

The aim of this paper is to give a brief overview of recent advances in the area of semiconductor nanomaterials, which represent extremely promising applications for materials with the spin-polarized transport of the charge carriers. It is shown on the ... Keywords: Magnetic properties, Nanostructure, Semiconductor, Spin-polarized transport, Spintronics

Paata Kervalishvili; Alexander Lagutin

2008-08-01T23:59:59.000Z

100

Mesoscopic Magnetic/Semiconductor Heterostructures  

Science Conference Proceedings (OSTI)

We report the experimental results of Fe and Fe3O4 nanostructures on GaAs(100) surfaces and hybrid Ferromagnetic/Semiconductor/Ferromagnetic (FM/SC/FM) spintronic devices. Element specific x-ray magnetic circular dichroism (XMCD) ... Keywords: Epitaxial ferromagnetic thin film, ferromagnetic/semiconductor hybrid structures, spintronics

Yong Bing Xu; E. Ahmad; Yong Xiong Lu; J. S. Claydon; Ya Zhai; G. van der Laan

2006-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Process for producing chalcogenide semiconductors  

DOE Patents (OSTI)

A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

Noufi, R.; Chen, Y.W.

1985-04-30T23:59:59.000Z

102

DeconfinementinYang-Mills: a conjecture for a general gauge Lie group G  

E-Print Network (OSTI)

Svetitsky and Yaffe have argued that if the deconfinement phase transition of a (d+1)-dimensional Yang-Mills theory with gauge group G is second order it should be in the universality class of a d-dimensional scalar model symmetric under the center C(G) of G. These arguments have been investigated numerically only considering Yang-Mills theory with gauge symmetry in the G = SU(N) branch, where C(G) = Z(N). The symplectic groups Sp(N) provide another extension of SU(2) = Sp(1) to general N and they all have the same center Z(2). Hence, in contrast to the SU(N) case, Sp(N) Yang-Mills theory allows to study the relevance of the group size on the order of the deconfinement phase transition keeping the available universality class fixed. Using lattice simulations, we present numerical results for the deconfinement phase transition in Sp(2) and Sp(3) Yang-Mills theories both in (2+1)d and (3+1)d. We then make a conjecture on the order of the deconfinement phase transition in Yang-Mills theories with general Lie groups SU(N), SO(N), Sp(N) and with exceptional groups G(2), F(4), E(6), E(7), E(8). Numerical results for G(2) Yang-Mills theory at finite temperature in (3 + 1)d are also presented.

M. Pepe A

2004-01-01T23:59:59.000Z

103

Mass gap in quantum energy-mass spectrum of relativistic Yang-Mills fields  

E-Print Network (OSTI)

A relativistic quantum Yang-Mills theory with a simple compact gauge Lie group on the four-dimensional Minkowski spacetime is set up in a framework of infinite-dimensional pseudodifferential operators in a nuclear Kree-Gelfand triple. The linear quantum Yang-Mills energy-mass operator is defined as the anti-normal quantization of the non-linear Yang-Mills energy-mass functional of consrained Cauchy data supported by an euclidean ball of a radius R. It is shown that expectation functional of the Yang-Mills energy-mass operator majorises the expectation functional of a scaled occupation number operator so that, by variational spectral principles, the quantum Yang-Mills spectral mass gap is positive. The mass gap is proportional to 1/R. The running coupling constant is proportional to the square root of R, leading to an asymptotic freedom for quantum Yang-Mills theory at short distances. This mathematically rigorous theory is non-perturbative and provides a solution for the 7th Clay Institute Millennium problem.

Alexander Dynin

2013-08-29T23:59:59.000Z

104

Thermal Ground State in Yang-Mills Thermodynamics  

Science Conference Proceedings (OSTI)

We derive an a useful priori estimate for the thermal ground state of deconfining phase of SU(2) Yang-Mills thermodynamics in four-dimensional, flat spacetime and discuss its implications. Upon a selfconsistent spatial coarse-graining over noninteracting, trivial-holonomy (BPS saturated)(anti)calorons of unit topological charge modulus an inert, adjoint scalar field |{phi}| and an effective pure-gauge configuration a{sub {mu}}{sup gs} emerge. The modulus |{phi}|>0 defines the maximal resolution in the coarse-grained theory and induces dynamical gauge-symmetry breaking. Thanks to perturbative renormalizability and the fact that |{phi}| can not absorb or emit energy-momentum the effective action is local and simple. The temperature dependence of the effective coupling is a consequence of thermodynamical consistency and describes the Coulomb screening of a static test charge due to short-lived monopole-antimonopole pairs. The latter occur unresolvably as small-holonomy excitations of (anti)calorons by the absorption of propagating fundamental gauge fields.

Hofmann, Ralf [ITP, Universitaet Heidelberg, Philosophenweg 16, 69120 Heidelberg (Germany)

2011-09-22T23:59:59.000Z

105

Volume dependence in 2+1 Yang-Mills theory  

E-Print Network (OSTI)

We present the results of an analysis of a 2+1 dimensional pure SU(N) Yang-Mills theory formulated on a 2-dimensional spatial torus with non-trivial magnetic flux. We focus on investigating the dependence of the electric-flux spectrum, extracted from Polyakov loop correlators, with the spatial size l, the number of colours N, and the magnetic flux m. The size of the torus acts a parameter that allows to control the onset of non-perturbative effects. In the small volume regime, where perturbation theory holds, we derive the one-loop self-energy correction to the single-gluon spectrum, for arbitrary N and m. We discuss the transition from small to large volumes that has been investigated by means of Monte-Carlo simulations. We argue that the energy of electric flux e, for the lowest gluon momentum, depends solely on e/N and on the dimensionless variable x=lambda N l, with lambda the 't Hooft coupling. The variable x can be interpreted as the dimensionless 't Hooft coupling for an effective box size given by Nl. This implies a version of reduction that allows to trade l by N without modifying the electric-flux energy.

Margarita Garcia Perez; Antonio Gonzalez-Arroyo; Masanori Okawa

2012-11-05T23:59:59.000Z

106

Analytical approach to SU(2) Yang-Mills thermodynamics  

E-Print Network (OSTI)

We propose an analytical approach to SU(2) Yang-Mills thermodynamics. The existence of a macroscopic and rigid adjoint Higgs field, generated by dilute trivial-holonomy calorons at large temperature $T$ (electric phase), implies a twofold degeneracy of the ground state which signals a broken electric $Z_2$ symmetry. A finite energy density $\\propto T$ of the ground state arises due to caloron interaction. An evolution equation for the effective gauge coupling, derived from thermodynamical self-consistency, predicts a second-order like transition (seen in lattice simulations) at $T_c$ to a phase where monopoles are condensed and off-Cartan excitations decoupled. In this magnetic phase the ground state is unique and dominates the pressure (negative total pressure). While the magnetic phase has a massive, propagating 'photon' it confines fundamental matter (pre-confinement). The temperature dependence of the magnetic gauge coupling predicts the transition to the confining phase at $T_C\\sim \\frac{T_c}{1.9}$ where center-vortex loops condense and the 'photon' decouples. We believe that this transition is 'swallowed' by finite-size artefacts in lattice simulations. No thermodynamical connection exists between the confining and the magnetic phase.

Ralf Hofmann

2004-08-10T23:59:59.000Z

107

Hydrogen in compound semiconductors  

DOE Green Energy (OSTI)

Progress in the understanding of hydrogen and its interactions in III/V and II/VI compound semiconductors is reviewed. Donor, acceptor and deep level passivation is well established in III/V compounds based on electrical measurements and on spectroscopic studies. The hydrogen donor levels in GaAs and GaP are estimated to lie near E{sub v}+0.5 eV and E{sub v}+0.3 eV, respectively. Arsenic acceptors have been passivated by hydrogen in CdTe and the very first nitrogen-hydrogen local vibrational model spectra in ZnSe have been reported. This long awaited result may lead to an explanation for the poor activation of nitrogen acceptors in ZnSe grown by techniques which involve high concentrations of hydrogen.

Haller, E.E.

1993-05-01T23:59:59.000Z

108

Semiconductor radiation detector  

DOE Patents (OSTI)

A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

Bell, Zane W. (Oak Ridge, TN); Burger, Arnold (Knoxville, TN)

2010-03-30T23:59:59.000Z

109

Thermal Conductivity of Polycrystalline Semiconductors and Ceramics  

E-Print Network (OSTI)

industries, polycrystalline semiconductors and ceramics havelaser industry, people are also seeking good ceramic laser

Wang, Zhaojie

2012-01-01T23:59:59.000Z

110

Asymptotically Free Yang-Mills Classical Mechanics with Self-Linked Orbits  

E-Print Network (OSTI)

We construct a classical mechanics Hamiltonian which exhibits spontaneous symmetry breaking akin the Coleman-Weinberg mechanism, dimensional transmutation, and asymptotically free self-similarity congruent with the beta-function of four dimensional Yang-Mills theory. Its classical equations of motion support stable periodic orbits and in a three dimensional projection these orbits are self-linked into topologically nontrivial, toroidal knots. The non-perturbative structure of four dimensional Yang-Mills theory continues to be the subject of extensive investigations. A major goal is the understanding of large distance properties such as color confinement, mass gap and the glueball spectrum. The Yang-Mills theory has also a number of well established salient features like ultraviolet asymptotic freedom and the presence of finite action instantons. Here we shall introduce a classical mechanics Hamiltonian which contains many incredients of the four dimensional Yang-Mills field theory, even though it is defined in a four dimensional phase space. These include asymptotically free self-similarity with a coupling constant that flows like the one loop coupling constant of four dimensional Yang-Mills theory, dimensional transmutation, and spontaneous symmetry breaking akin the Coleman-Weinberg mechanism. Furthermore, we find that its Hamiltons equations support stable periodic

M. Lbcke; A. J. Niemi; K. Torokoff

2008-01-01T23:59:59.000Z

111

Simulating nanoscale semiconductor devices.  

SciTech Connect

The next generation of electronic devices will be developed at the nanoscale and molecular level, where quantum mechanical effects are observed. These effects must be accounted for in the design process for such small devices. One prototypical nanoscale semiconductor device under investigation is a resonant tunneling diode (RTD). Scientists are hopeful the quantum tunneling effects present in an RTD can be exploited to induce and sustain THz frequency current oscillations. To simulate the electron transport within the RTD, the Wigner-Poisson equations are used. These equations describe the time evolution of the electrons distribution within the device. In this paper, this model and a parameter study using this model will be presented. The parameter study involves calculating the steady-state current output from the RTD as a function of an applied voltage drop across the RTD and also calculating the stability of that solution. To implement the parameter study, the computational model was connected to LOCA (Library of Continuation Algorithms), a part of Sandia National Laboratories parallel solver project, Trilinos. Numerical results will be presented.

Salinger, Andrew Gerhard; Zhao, P. (North Carolina State University, Raleigh, NC); Woolard, D. L. (U. S. Army Research Laboratory, NC); Kelley, C. Tim (North Carolina State University, Raleigh, NC); Lasater, Matthew S. (North Carolina State University, Raleigh, NC)

2005-03-01T23:59:59.000Z

112

Higgs potential and confinement in Yang-Mills theory on exotic R^4  

E-Print Network (OSTI)

We show that pure SU(2) Yang-Mills theory formulated on certain exotic R^4 from the radial family shows confinement. The condensation of magnetic monopoles and the qualitative form of the Higgs potential are derived from the exotic R^4, e. A relation between the Higgs potential and inflation is discussed. Then we obtain a formula for the Higgs mass and discuss a particular smoothness structure so that the Higgs mass agrees with the experimental value. The singularity in the effective dual U(1) potential has its cause by the exotic 4-geometry and agrees with the singularity in the maximal abelian gauge scenario. We will describe the Yang-Mills theory on e in some limit as the abelian-projected effective gauge theory on the standard R^4. Similar results can be derived for SU(3) Yang-Mills theory on an exotic R^4 provided dual diagonal effective gauge bosons propagate in the exotic 4-geometry.

Torsten Asselmeyer-Maluga; Jerzy Krl

2013-03-07T23:59:59.000Z

113

The S-matrix and graviton self-energy in quantum Yang-Mills gravity  

E-Print Network (OSTI)

The S-matrix, its unitarity and the graviton self-energy at the one-loop level are discussed on the basis of quantum Yang-Mills gravity with the translational gauge symmetry in flat space-time. The unitarity and gauge invariance of the S-matrix in a class of gauge conditions is preserved by massless ghost vector particles, called `Feynman-DeWitt-Mandelstam' (FDM) ghosts, in quantum Yang-Mills gravity. Using dimensional regularization, the graviton self-energy are explicitly calculated with a general gauge condition. The resultant divergence of graviton self-energy at the one-loop level resembles to that in quantum electrodynamics.

Jong-Ping Hsu; Sung Hoon Kim

2012-10-16T23:59:59.000Z

114

Wide-Bandgap Semiconductors  

SciTech Connect

With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters. With the advent of the use of SiC devices it is imperative that models of these be made available in commercial simulators. This enables power electronic designers to simulate their designs for various test conditions prior to fabrication. To build an accurate transistor-level model of a power electronic system such as an inverter, the first step is to characterize the semiconductor devices that are present in the system. Suitable test beds need to be built for each device to precisely test the devices and obtain relevant data that can be used for modeling. This includes careful characterization of the parasitic elements so as to emulate the test setup as closely as possible in simulations. This report is arranged as follows: Chapter 2--The testing and characterization of several diodes and power switches is presented. Chapter 3--A 55-kW hybrid inverter (Si insulated gate bipolar transistor--SiC Schottky diodes) device models and test results are presented. A detailed description of the various test setups followed by the parameter extraction, modeling, and simulation study of the inverter performance is presented. Chapter 4--A 7.5-kW all-SiC inverter (SiC junction field effect transistors (JFET)--SiC Schottky diodes) was built and tested. The models built in Saber were validated using the test data and the models were used in system applications in the Saber simulator. The simulation results and a comparison of the data from the prototype tests are discussed in this chapter. Chapter 5--The duration test results of devices utilized in buck converters undergoing reliability testing are presented.

Chinthavali, M.S.

2005-11-22T23:59:59.000Z

115

Correlated exciton dynamics in semiconductor nanostructures  

E-Print Network (OSTI)

The absorption and dissipation of energy in semiconductor nanostructures are often determined by excited electron dynamics. In semiconductors, one fundamentally important electronic state is an exciton, an excited electron ...

Wen, Patrick, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

116

Synchronization in semiconductor laser rings  

E-Print Network (OSTI)

We examine the dynamics of semiconductor lasers coupled in a ring configuration. The lasers, which have stable output intensity when isolated, behave chaotically when coupled unidirectionally in a closed chain. In this way, we show that neither feedback nor bidirectional coupling is necessary to induce chaotic dynamics at the laser output. We study the synchronization phenomena arising in this particular coupling architecture, and discuss its possible application to chaos-based communications. Next, we extend the study to bidirectional coupling and propose an appropriate technique to optical chaos encryption/decryption in closed chains of mutually coupled semiconductor lasers.

Javier M. Buldu; M. C. Torrent; Jordi Garcia-Ojalvo

2006-10-06T23:59:59.000Z

117

Sandia National Labs: PCNSC: Departments: Semiconductor Material...  

NLE Websites -- All DOE Office Websites (Extended Search)

Semiconductor Material & Device Sciences > Advanced Materials Sciences > Lasers, Optics & Remote Sensing Energy Sciences Small Science Cluster Business Office News Partnering...

118

Innovations in Semiconductor Devices for Exascale ...  

Science Conference Proceedings (OSTI)

Innovations in Semiconductor Devices for Exascale Computing. TC Chen IBM Fellow and Vice President of Science and ...

2010-10-05T23:59:59.000Z

119

Economic Impact of Measurement in the Semiconductor ...  

Science Conference Proceedings (OSTI)

... semiconductors are the workhorses that take electric voltage and engender ... the distance between lines of memory (dynamic random access ...

2012-10-09T23:59:59.000Z

120

Data mining solves tough semiconductor manufacturing problems  

Science Conference Proceedings (OSTI)

Keywords: data mining, machine learning, manufacturing optimization, neural networks, pattern recognition, rule induction, self organizing maps, semiconductor yield enhancement

Mike Gardner; Jack Bieker

2000-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Bottoms Up: Better Organic Semiconductors for Printable ...  

Science Conference Proceedings (OSTI)

... A patent from British researchers in 2005 offered a promising compromise: blend the small semiconductor molecules in with the polymer. ...

2012-10-18T23:59:59.000Z

122

Semiconductor assisted metal deposition for nanolithography applications  

DOE Patents (OSTI)

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

Rajh, Tijana (Naperville, IL); Meshkov, Natalia (Downers Grove, IL); Nedelijkovic, Jovan M. (Belgrade, YU); Skubal, Laura R. (West Brooklyn, IL); Tiede, David M. (Elmhurst, IL); Thurnauer, Marion (Downers Grove, IL)

2002-01-01T23:59:59.000Z

123

Robust Capacity Planning in Semiconductor Manufacturing  

E-Print Network (OSTI)

Oct 3, 2001 ... Abstract: We present a stochastic programming approach to capacity planning under demand uncertainty in semiconductor manufacturing.

124

Hidden symmetries induced by a canonical transformation and gauge structure of compactified Yang-Mills theories  

E-Print Network (OSTI)

Compactified Yang-Mills theories with one universal extra dimension were found [arXiv:1008.4638] to exhibit two types of gauge invariances: the standard gauge transformations (SGTs) and the nonstandard gauge transformations (NSGTs). In the present work we show that these transformations are not exclusive to compactified scenarios. Introducing a notion of hidden symmetry, based on the fundamental concept of canonical transformation, we analyse three different gauge systems, each of which is mapped to a certain effective theory that is invariant under the so-called SGTs and NSGTs. The systems under discussion are: (i) four dimensional pure $SU(3)$ Yang-Mills theory, (ii) four dimensional $SU(3)$ Yang-Mills with spontaneous symmetry breaking, and (iii) pure Yang-Mills theory with one universal compact extra dimension. The canonical transformation, that induces the notion of hidden symmetry, maps objects with well defined transformation laws under a gauge group $G$ to well defined objects under a non-trivial subgroup $H \\subset G$. In the case where spontaneous symmetry breaking is present, the set of SGTs corresponds to the group into which the original gauge group is broken into, whereas the NSGTs are associated to the broken generators and can be used to define the unitary gauge. For the system (iii), the SGTs coincide with the gauge group $ SU(N,\\cal{M}^{4}) $, whereas the NSGTs do not form a group; in this system the 'fundamental' theory and the effective one are shown to be classically equivalent.

M. A. Lpez-Osorio; E. Martnez-Pascual; H. Novales-Snchez; J. J. Toscano

2013-02-13T23:59:59.000Z

125

Energy Efficient Pump Control for an Offshore Oil Processing System Yang, Zhenyu; Soleiman, Kian ; Lhndorf, Bo  

E-Print Network (OSTI)

Energy Efficient Pump Control for an Offshore Oil Processing System Yang, Zhenyu; Soleiman, Kian. (2012). Energy Efficient Pump Control for an Offshore Oil Processing System: IFAC Workshop - Automatic of a pump system for an offshore oil processing system is investigated. The seawater is lifted up by a pump

Yang, Zhenyu

126

Gravity as the square of Yang-Mills: implications for N=8 Supergravity  

E-Print Network (OSTI)

The pure gravity Lagrangian can be written as the "square" of the pure Yang-Mills Lagrangian to second order in coupling constants. This paper uses this form of the gravity Lagrangian as a starting point to arrive at a compact light-cone superspace Lagrangian for N=8 Supergravity to order $\\kappa$^2.

Sudarshan Ananth

2009-02-18T23:59:59.000Z

127

Nanowire-Based All-Oxide Solar Cells Benjamin D. Yuhas and Peidong Yang*  

E-Print Network (OSTI)

of this solution were placed onto an indium tin oxide (ITO) coated glass substrate (Thin Film Devices, 40 energy production is fast becoming a vital source of renewable energy being developed as an alternativeNanowire-Based All-Oxide Solar Cells Benjamin D. Yuhas and Peidong Yang* Department of Chemistry

Yang, Peidong

128

KCMAC-BYY: Kernel CMAC using Bayesian Ying-Yang learning  

Science Conference Proceedings (OSTI)

The Cerebellar Model Articulation Controller (CMAC) possesses attractive properties of fast learning and simple computation. In application, the size of its association vector is always reduced to economize the memory requirement, greatly constraining ... Keywords: Bayesian Ying-Yang learning, CMAC, Kernel machine

K. Tian; B. Guo; G. Liu; I. Mitchell; D. Cheng; W. Zhao

2013-02-01T23:59:59.000Z

129

BIOSORPTION OF URANIUM ON SARGASSUM BIOMASS JINBAI YANG and BOHUMIL VOLESKY*  

E-Print Network (OSTI)

BIOSORPTION OF URANIUM ON SARGASSUM BIOMASS JINBAI YANG and BOHUMIL VOLESKY* Department of Chemical uranium sorption capacity exceeding 560 mg/g, 330 mg/g and 150 mg/g at pH 4.0, 3.2 and 2.6, respectively interpreted in terms of the Langmuir model. The sorption system pH profoundly aected uranium sorption

Volesky, Bohumil

130

Equivalence of Two Approaches to Yang-Mills on Non-commutative Torus  

E-Print Network (OSTI)

There are two notions of Yang-Mills action functional in noncommutative geometry. We show that for noncommutative n-torus both these notions agree. We also prove a structure theorem on the Hermitian structure of a finitely generated projective modules over spectrally invariant subalgebras of $C^*$-algebras.

Partha Sarathi Chakraborty; Satyajit Guin

2013-04-29T23:59:59.000Z

131

Mass gap in quantum energy-mass spectrum of relativistic Yang-Mills fields  

E-Print Network (OSTI)

A non-perturbative relativistic quantum Yang-Mills theory with a semisimple compact gauge Lie group on the four-dimensional Minkowski spacetime is set up in a Schroedinger representation with infinite-dimensional differential operators in the framework of sesqui-holomorphic nuclear Kree-Gelfand triples. The \\emph{linear} quantum Yang-Mills energy-mass operator $\\mathbf{H}$ is defined as the anti-normal quantization of the \\emph{non-linear} Yang-Mills energy-mass functional of Cauchy data supported by a ball $\\mathbb{B}(R)$ with the center at the origin of $\\mathbb{R}^3$ and the variable radius R>0. The general global solution of the non-linear Yang-Mills system of partial differential equations (with no restrictions at infinity) is reduced to the solution of the initial value problems in the temporal gauge with the Cauchy data supported by the balls $\\mathbb{B}(R)$. It is shown that $\\mathbf{H}$ dominates the number operator $\\mathbf{N}$. Since 0 is the spectral infimum of $\\mathbf{H}$ and, simultaneously, the simple fundamental eigenvalue of $N$, variational spectral principles imply that 0 is the simple fundamental eigenvalue of $N$ as well. Thus $\\mathbf{H}$ has a positive mass gap. The domination proof depends crucially on the magic of the Killing quadratic form that reveals a mass quadratic form in the Weyl symbol of $\\mathbf{H}$. With a dimensional transmutation of the coupling constant, the mass gap is proportional to 1/R and the running coupling constant is proportional to $\\sqrt{R}$. The inverse dependence demonstrates an asymptotic freedom for quantum Yang-Mills self-interaction at short distances. The mathematically rigorous theory is non-perturbative and provides a solution for the 7th Clay Institute Millennium problem.

Alexander Dynin

2013-08-29T23:59:59.000Z

132

Mechanical scriber for semiconductor devices  

DOE Patents (OSTI)

A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer. 5 figs.

Lin, P.T.

1985-03-05T23:59:59.000Z

133

2010 Defects in Semiconductors GRC  

SciTech Connect

Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, as well as an emphasis on the development of novel defect detection methods and first-principles defect theories. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference will deal with point and extended defects in a broad range of electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, oxides, sp{sup 2} carbon based-materials, and photovoltaic/solar cell materials, and in understanding important defect phenomena such as doping bottleneck in nanostructures and the diffusion of defects and impurities. The program consists of about twenty invited talks and a number of contributed poster sessions. The emphasis should be on work which has yet to be published. The large amount of discussion time provides an ideal forum for dealing with topics that are new and/or controversial.

Shengbai Zhang

2011-01-06T23:59:59.000Z

134

Mechanical scriber for semiconductor devices  

DOE Patents (OSTI)

A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer.

Lin, Peter T. (East Brunswick, NJ)

1985-01-01T23:59:59.000Z

135

A Confining Non-Local Four-Fermi Interaction from Yang-Mills Theory in a Stochastic Background  

E-Print Network (OSTI)

We derive a non-local four-fermi term with a linear potential from Yang-Mills Theory in a stochastic background. The stochastic background is a class of classical configuration derived from the non-linear gauge.

Jose A. Magpantay

2004-12-10T23:59:59.000Z

136

Baeklund transformations, conservation laws and linearization of the self-dual Yang-Mills and chiral fields  

SciTech Connect

Baecklund Transformations (BT) and the derivation of local conservation laws are first reviewed in the classic case of the Sine-Gordon equation. The BT, conservation laws (local and nonlocal), and the inverse-scattering formulation are discussed for the chiral and the self-dual Yang-Mills fields. Their possible applications to the loop formulation for the Yang-Mills fields are mentioned. 55 references, 1 figure.

Wang, L.C.

1980-01-01T23:59:59.000Z

137

The Polarization Tensor of the Massless Mode in Yang-Mills Thermodynamics  

Science Conference Proceedings (OSTI)

We discuss the constraints on energy-momentum transfers in local vertices in the effective theory for the deconfining phase of SU(2) Yang-Mills thermodynamics. Subsequently, we apply these constraints to the computation of the polarization tensor of the massless mode on the one-loop level. The resulting gap equation for the sought-after screening function is solved numerically. We discuss and interpret our results.

Schwarz, Markus [Salierstr. 10, 76137 Karlruhe (Germany)

2011-09-22T23:59:59.000Z

138

Noncommutative N=1 super Yang-Mills, the Seiberg-Witten map and UV divergences  

E-Print Network (OSTI)

Classically, the dual under the Seiberg-Witten map of noncommutative U(N), {\\cal N}=1 super Yang-Mills theory is a field theory with ordinary gauge symmetry whose fields carry, however, a \\theta-deformed nonlinear realisation of the {\\cal N}=1 supersymmetry algebra in four dimensions. For the latter theory we work out at one-loop and first order in the noncommutative parameter matrix \\theta^{\\mu\

C. P. Martin; C. Tamarit

2009-07-14T23:59:59.000Z

139

String scattering in flat space and a scaling limit of Yang-Mills correlators  

Science Conference Proceedings (OSTI)

We use the flat space limit of the AdS/CFT correspondence to derive a simple relation between the 2{yields}2 scattering amplitude of massless string states in type IIB superstring theory on ten-dimensional Minkowski space and a scaling limit of the N=4 super Yang-Mills four-point functions. We conjecture that this relation holds nonperturbatively and at arbitrarily high energy.

Okuda, Takuya [Perimeter Institute for Theoretical Physics, Waterloo, Ontario, N2L 2Y5 (Canada); Penedones, Joao [Kavli Institute for Theoretical Physics, Santa Barbara, California 93106-4030 (United States)

2011-04-15T23:59:59.000Z

140

Particle motion in a Yang-Mills field Wong's equations and spin one-half analogues  

E-Print Network (OSTI)

A complete, straightforward and natural Lagrangian description is given for the classical non-relativistic dynamics of a particle with colour or internal symmetry degrees of freedom moving in a background Yang-Mills field. This provides a new simple Lagrangian formalism for Wong's equations for spinless particles, and presents also their generalisation, in gauge covariant form, for spin-\\frack particles, within a complete Lagrangian formalism.

Van Holten, J W

1995-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Particle Motion in a Yang-Mills Field: Wong's Equations and Spin One-half Analogues  

E-Print Network (OSTI)

A complete, straightforward and natural Lagrangian description is given for the classical non-relativistic dynamics of a particle with colour or internal symmetry degrees of freedom moving in a background Yang-Mills field. This provides a new simple Lagrangian formalism for Wong's equations for spinless particles, and presents also their generalisation, in gauge covariant form, for spin-$\\frack$ particles, within a complete Lagrangian formalism.

N Linden A J Macfarlane; J W van Holten

1995-12-11T23:59:59.000Z

142

1992 Trieste Lectures on Topological Gauge Theory and Yang-Mills Theory  

E-Print Network (OSTI)

In these lecture notes we explain a connection between Yang-Mills theory on arbitrary Riemann surfaces and two types of topological field theory, the so called $BF$ and cohomological theories. The quantum Yang-Mills theory is solved exactly using path integral techniques. Explicit expressions, in terms of group representation theory, are obtained for the partition function and various correlation functions. In a particular limit the Yang-Mills theory devolves to the topological models and the previously determined correlation functions give topological information about the moduli spaces of flat connections. In particular, the partition function yields the volume of the moduli space for which an explicit expression is derived. These notes are self contained, with a basic introduction to the various ideas underlying the topological field theories. This includes some relatively new work on handling problems that arise in the presence of reducible connections which in turn forms the bridge between the various models under consideration. These notes are identical to those made available to participants of the 1992 summer school in Trieste, except for one or two additions added circa January 1993.

George Thompson

1993-05-24T23:59:59.000Z

143

Yang-Lee Zeros of the Ising model on Random Graphs of Non Planar Topology  

E-Print Network (OSTI)

We obtain in a closed form the 1/N^2 contribution to the free energy of the two Hermitian N\\times N random matrix model with non symmetric quartic potential. From this result, we calculate numerically the Yang-Lee zeros of the 2D Ising model on dynamical random graphs with the topology of a torus up to n=16 vertices. They are found to be located on the unit circle on the complex fugacity plane. In order to include contributions of even higher topologies we calculated analytically the nonperturbative (sum over all genus) partition function of the model Z_n = \\sum_{h=0}^{\\infty} \\frac{Z_n^{(h)}}{N^{2h}} for the special cases of N=1,2 and graphs with n\\le 20 vertices. Once again the Yang-Lee zeros are shown numerically to lie on the unit circle on the complex fugacity plane. Our results thus generalize previous numerical results on random graphs by going beyond the planar approximation and strongly indicate that there might be a generalization of the Lee-Yang circle theorem for dynamical random graphs.

D'Albuquerque, L C; Dalmazi, D; Albuquerque, Luiz C. de; Alves, Nelson A.

2000-01-01T23:59:59.000Z

144

Yang-Lee Zeros of the Ising model on Random Graphs of Non Planar Topology  

E-Print Network (OSTI)

We obtain in a closed form the 1/N^2 contribution to the free energy of the two Hermitian N\\times N random matrix model with non symmetric quartic potential. From this result, we calculate numerically the Yang-Lee zeros of the 2D Ising model on dynamical random graphs with the topology of a torus up to n=16 vertices. They are found to be located on the unit circle on the complex fugacity plane. In order to include contributions of even higher topologies we calculated analytically the nonperturbative (sum over all genus) partition function of the model Z_n = \\sum_{h=0}^{\\infty} \\frac{Z_n^{(h)}}{N^{2h}} for the special cases of N=1,2 and graphs with n\\le 20 vertices. Once again the Yang-Lee zeros are shown numerically to lie on the unit circle on the complex fugacity plane. Our results thus generalize previous numerical results on random graphs by going beyond the planar approximation and strongly indicate that there might be a generalization of the Lee-Yang circle theorem for dynamical random graphs.

Luiz C. de Albuquerque; Nelson A. Alves; D. Dalmazi

1999-12-29T23:59:59.000Z

145

Optical devices featuring textured semiconductor layers  

DOE Patents (OSTI)

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Moustakas, Theodore D. (Dover, MA); Cabalu, Jasper S. (Cary, NC)

2012-08-07T23:59:59.000Z

146

Optical devices featuring textured semiconductor layers  

DOE Patents (OSTI)

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Moustakas, Theodore D. (Dover, MA); Cabalu, Jasper S. (Cary, NC)

2011-10-11T23:59:59.000Z

147

Power Electronics in the Semiconductor Fabrication Industry  

Science Conference Proceedings (OSTI)

This report provides utility marketing and account executives and engineering staff with fundamental information about the use of power electronics systems in semiconductor fabrication equipment. It details the power electronics systems used in typical semiconductor production equipment as well as current topology and system compatibility issues. Finally, the report outlines how power electronics will serve future advances in the semiconductor industry and how utilities can help the industry make their e...

1999-03-10T23:59:59.000Z

148

Stretchable semiconductor elements and stretchable electrical circuits  

DOE Patents (OSTI)

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Rogers, John A. (Champaign, IL); Khang, Dahl-Young (Seoul, KR); Menard, Etienne (Durham, NC)

2009-07-07T23:59:59.000Z

149

Wide Bandgap Semiconductors: Pursuing the Promise  

NLE Websites -- All DOE Office Websites (Extended Search)

the size of an automotive cooling system by 60% or even eliminate the secondary liquid cooling system. 2 Military: WBG semiconductors have great potential as an enabling...

150

Lattice matched semiconductor growth on crystalline ...  

Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a metal or ...

151

Climate VISION: Private Sector Initiatives: Semiconductors: Work...  

Office of Scientific and Technical Information (OSTI)

Work Plans The Semiconductor Industry Association has finalized its work plan with the collaboration of EPA. The plan describes actions the industry intends to take to achieve its...

152

Low Energy Ion Implantationin Semiconductor Manufacturing | U...  

Office of Science (SC) Website

Low Energy Ion Implantation in Semiconductor Manufacturing Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Spinoff Applications SBIRSTTR...

153

Low Energy Ion Implantationin Semiconductor Manufacturing | U...  

Office of Science (SC) Website

Low Energy Ion Implantation in Semiconductor Manufacturing Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Spinoff Applications Spinoff...

154

Wafer-fused semiconductor radiation detector  

DOE Patents (OSTI)

Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

Lee, Edwin Y. (Livermore, CA); James, Ralph B. (Livermore, CA)

2002-01-01T23:59:59.000Z

155

Stangl Semiconductor Equipment AG | Open Energy Information  

Open Energy Info (EERE)

Solar Product German manufacturer of wet chemistry systems for processing silicon and thin-film solar cells. References Stangl Semiconductor Equipment AG1 LinkedIn...

156

Business Case Slide 28: High-Value: Semiconductors - Program...  

NLE Websites -- All DOE Office Websites (Extended Search)

Semiconductors - Program Focus Previous Slide Next Slide Table of Contents High-Value: Semiconductors - Program Focus Measurement of DUO2 transistor properties at ORNL Measurement...

157

Stable surface passivation process for compound semiconductors  

DOE Patents (OSTI)

A passivation process for a previously sulfided, selenided or tellurated III-V compound semiconductor surface. The concentration of undesired mid-gap surface states on a compound semiconductor surface is reduced by the formation of a near-monolayer of metal-(sulfur and/or selenium and/or tellurium)-semiconductor that is effective for long term passivation of the underlying semiconductor surface. Starting with the III-V compound semiconductor surface, any oxidation present thereon is substantially removed and the surface is then treated with sulfur, selenium or tellurium to form a near-monolayer of chalcogen-semiconductor of the surface in an oxygen-free atmosphere. This chalcogenated surface is then contacted with a solution of a metal that will form a low solubility chalcogenide to form a near-monolayer of metal-chalcogen-semiconductor. The resulting passivating layer provides long term protection for the underlying surface at or above the level achieved by a freshly chalcogenated compound semiconductor surface in an oxygen free atmosphere.

Ashby, Carol I. H. (Edgewood, NM)

2001-01-01T23:59:59.000Z

158

Preparation of a semiconductor thin film  

SciTech Connect

A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Pehnt, Martin (TuBingen, DE); Schulz, Douglas L. (Denver, CO); Curtis, Calvin J. (Lakewood, CO); Ginley, David S. (Evergreen, CO)

1998-01-01T23:59:59.000Z

159

Semiconductor liquid-junction solar cell  

DOE Patents (OSTI)

A semiconductor liquid junction photocell in which the photocell is in the configuration of a light concentrator and in which the electrolytic solution both conducts current and facilitates the concentration of incident solar radiation onto the semiconductor. The photocell may be in the configuration of a non-imaging concentrator such as a compound parabolic concentrator, or an imaging concentrator such as a lens.

Parkinson, B.A.

1982-10-29T23:59:59.000Z

160

Semiconductor switch geometry with electric field shaping  

DOE Patents (OSTI)

An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

Booth, Rex (Livermore, CA); Pocha, Michael D. (Livermore, CA)

1994-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Novel room temperature ferromagnetic semiconductors  

SciTech Connect

Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous distribution of Mn substituting for Zn a 2+ state in the ZnO lattice. Ferromagnetic Resonance (FMR) technique is used to confirm the existence of ferromagnetic ordering at temperatures as high as 425K. The ab initio calculations were found to be consistent with the observation of ferromagnetism arising from fully polarized Mn 2+ state. The key to observed room temperature ferromagnetism in this system is the low temperature processing, which prevents formation of clusters, secondary phases and the host ZnO from becoming n-type. The electronic structure of the same Mn doped ZnO thin films studied using XAS, XES and RIXS, revealed a strong hybridization between Mn 3d and O 2p states, which is an important characteristic of a Dilute magnetic Semiconductor (DMS). It is shown that the various processing conditions like sintering temperature, dopant concentration and the properties of precursors used for making of DMS have a great influence on the final properties. Use of various experimental techniques to verify the physical properties, and to understand the mechanism involved to give rise to ferromagnetism is presented. Methods to improve the magnetic moment in Mn doped ZnO are also described. New promising DMS materials (such as Cu doped ZnO are explored). The demonstrated new capability to fabricate powder, pellets, and thin films of room temperature ferromagnetic semiconductors thus makes possible the realization of a wide range of complex elements for a variety of new multifunctional phenomena related to Spintronic devices as well as magneto-optic components.

Gupta, Amita

2004-11-01T23:59:59.000Z

162

The Gluon Green's function in N=4 supersymmetric Yang-Mills theory.  

E-Print Network (OSTI)

energy limit of scattering amplitudes in the N = 4 supersymmetric Yang Mills theory is studied by solving the corresponding BFKL equation in the next toleading approximation. The gluon Greens function is analysed using a newly proposed method suitable... (~ka) ??(~kb) f ( ~ka, ~kb,Y ? ln s s0 ) , (1) where s0 = |~ka||~kb| is the Regge scale. The energy dependence is determined by the universal processindependent gluon Greens function f . The impact factors, ?,??, depend on the process under study...

Andersen, Jeppe R; Sabio Vera, Agustin

163

From Decay to Complete Breaking: Pulling the Strings in SU(2) Yang-Mills Theory  

Science Conference Proceedings (OSTI)

We study (2Q+1) strings connecting two static charges Q in (2+1)D SU(2) Yang-Mills theory. While the fundamental (2) string between two charges Q=(1/2) is unbreakable, the adjoint (3) string connecting two charges Q=1 can break. When a (4) string is stretched beyond a critical length, it decays into a (2) string by gluon pair creation. When a (5) string is stretched, it first decays into a (3) string, which eventually breaks completely. The energy of the screened charges at the ends of a string is well described by a phenomenological constituent gluon model.

Pepe, M. [INFN, Istituto Nazionale di Fisica Nucleare, Sezione di Milano-Bicocca, Edificio U2, Piazza della Scienza 3, 20126 Milano (Italy); Wiese, U.-J. [Center for Research and Education in Fundamental Physics, Institute for Theoretical Physics, Bern University, Sidlerstrasse 5, 3012 Bern (Switzerland); Institute for Theoretical Physics, ETH Zuerich, Schafmattstrasse 32, CH-8093 Zuerich (Switzerland)

2009-05-15T23:59:59.000Z

164

Surface defects, the superconformal index and q-deformed Yang-Mills  

E-Print Network (OSTI)

Recently a prescription to compute the four-dimensional N = 2 superconformal index in the presence of certain BPS surface defects has been given. These surface defects are labelled by symmetric representations of SU(N). In the present paper we give a prescription to compute the superconformal index in the presence of surface defects labelled by arbitrary representations of SU(N). Furthermore, we extend the dictionary between the N = 2 superconformal Schur-index and correlators of q-deformed Yang-Mills to incorporate such surface defects.

Luis F. Alday; Mathew Bullimore; Martin Fluder; Lotte Hollands

2013-03-19T23:59:59.000Z

165

Energy Management in Semiconductor Cleanrooms  

NLE Websites -- All DOE Office Websites (Extended Search)

6 6 Energy Management in Semiconductor Cleanrooms Cleanrooms are used extensively in the manufacturing of integrated circuits and in the biological and pharmaceutical industries. For particle concentrations to remain low, for example, less than 100 particles/ft3 at >0.5 micrometers (Class 100), the air in the cleanroom must be filtered. Typically, the air is circulated through high-efficiency particulate air (HEPA) filters at a very high rate, such as 400 to 600 room air volumes per hour, to maintain low particle concentrations. The combined effect of high recirculation and a high pressure drop through HEPA filters is higher power costs per unit floor area to operate the cleanroom than to ventilate a commercial building. Cleanrooms are usually ventilated constantly and

166

Semiconductor Nanoclusters as Potential Photocatalysts  

NLE Websites -- All DOE Office Websites (Extended Search)

High Power Electronics Based on the 2-Dimensional Electron Gas in GaN High Power Electronics Based on the 2-Dimensional Electron Gas in GaN Heterostructures by S. R. Kurtz, A. A. Allerman, and D. Koleski Motivation-GaN-based electronics offer miniaturization potential of radical proportions for microwave power amplifiers. GaN's large bandgap, high breakdown field, high electron velocity, and excellent thermal properties have led to high electron mobility transistors (HEMT) with up to 10x the power density of GaAs and other traditional semiconductors at frequencies up to 20 GHz. Further contributing to the outstanding performance of GaN-based amplifiers is the highly conducting, 2-dimensional electron gas (2DEG) used for the HEMT channel. Intrinsic polarization and piezoelectric properties of GaN materials can produce a 2DEG at an

167

Boron doping a semiconductor particle  

DOE Patents (OSTI)

A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

Stevens, Gary Don (18912 Ravenglen Ct., Dallas, TX 75287); Reynolds, Jeffrey Scott (703 Horizon, Murphy, TX 75094); Brown, Louanne Kay (2530 Poplar Tr., Garland, TX 75042)

1998-06-09T23:59:59.000Z

168

Phosphorus doping a semiconductor particle  

DOE Patents (OSTI)

A method of phosphorus doping a semiconductor particle using ammonium phosphate is disclosed. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried with the phosphorus then being diffused into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement. 1 fig.

Stevens, G.D.; Reynolds, J.S.

1999-07-20T23:59:59.000Z

169

Heating device for semiconductor wafers  

DOE Patents (OSTI)

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernible pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light. 4 figs.

Vosen, S.R.

1999-07-27T23:59:59.000Z

170

Heating device for semiconductor wafers  

DOE Patents (OSTI)

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernable pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

Vosen, Steven R. (Berkeley, CA)

1999-01-01T23:59:59.000Z

171

Excess charges in semiconductor nanocrystallites  

Science Conference Proceedings (OSTI)

The authors explore in this report the effects of excess electrons on the edge of the absorption spectrum of small semiconductor particles. The presence of these charges leads to strong bleaching of the absorption at the exciton region and to slight enhancement of the absorption on both sides of the bleaching. They show that the effect is independent of the origin of the charge; it occurs whether the charge is injected into the particle or only attached to its surface, and it appears even when the charge is deeply localized within the band gap. They conclude that the effect arises from the electric field associated with the charge and not from its presence in the band.

Laungdilok, C.; Lawless, D.; Cook, A.R.; Meisel, D. [Argonne National Lab., IL (United States). Chemistry Div.

1995-06-01T23:59:59.000Z

172

Semiconductor processing with excimer lasers  

DOE Green Energy (OSTI)

The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications.

Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.

1983-01-01T23:59:59.000Z

173

An object oriented code for simulating supersymmetric Yang--Mills theories  

E-Print Network (OSTI)

Discretization of supersymmetric Yang--Mills (SYM) theories is an old problem in lattice field theory. It has resisted solution until recently when new ideas drawn from orbifold constructions and topological field theories have been brought to bear on the question. The result has been the creation of a new class of lattice gauge theories in which the lattice action is invariant under one or more supersymmetries. The resultant theories are local, free of doublers and also possess exact gauge-invariance. In principle they form the basis for a truly non-perturbative definition of the continuum SYM theories. In the continuum limit they lead to a version of the Yang-Mills theory formulated in terms of {\\it twisted} fields. In this paper, we briefly review these ideas and then go on to describe the details of a C++ code, which can be used to simulate these theories. We sketch the design of the code, with particular emphasis being placed on SYM theories with $\\cN=2$ in two dimensions and $\\cN=4$ in three and four dimensions, making one-to-one comparisons between the essential components of the SYM theories and their corresponding counterparts appearing in the simulation

Simon Catterall; Anosh Joseph

2011-08-06T23:59:59.000Z

174

Holographic quark-antiquark potential in hot, anisotropic Yang-Mills plasma  

E-Print Network (OSTI)

Using the gauge/gravity duality we calculate the heavy quark-antiquark potential in a hot, anisotropic and strongly coupled Yang-Mills plasma in (3+1)-dimensions. As the anisotropic medium we take a deformed version of \\mathcal{N} = 4 super Yang-Mills theory at finite temperature following a recent work where the dual type IIB supergravity solution is also proposed. We turn on a small value of the anisotropy parameter, for which the gravity dual is known analytically (perturbatively), and compute the velocity-dependent quark-antiquark interaction potential when the pair is moving through the plasma with a velocity v. By setting v = 0 we recover the static quark-antiquark potential. We numerically study how the potential is modified in the presence of anisotropy. We further show numerically how the quark-antiquark separation (both in the static and the velocity-dependent case) and hence, the screening length gets modified by anisotropy. We discuss various cases depending upon the direction of the dipole and the direction of its propagation and make a comparative study of these cases. We are also able to obtain an analytical expression for the screening length of the dipole moving in a hot, anisotropic plasma in a special case.

Somdeb Chakraborty; Najmul Haque

2012-12-12T23:59:59.000Z

175

Conditions for exact equivalence of Kaluza-Klein and Yang-Mills theories  

E-Print Network (OSTI)

Although it is well known that Kaluza-Klein and Yang-Mills theories define equivalent structures on principal bundles, the general conditions for equivalence of their Lagrangians have not been explicitly stated. In this paper we address the conditions for equivalence. The formulation of these conditions is based on previous work in which the Dirac and Einstein equations were unified in a tetrad formulation of the Kaluza-Klein model. This Kaluza-Klein model is derived from mapping a bispinor field to a set of SL(2,R) x U(1) gauge potentials and a complex scalar field. (A straightforward derivation of this map using Hestenes' tetrad for the spin connection in a Riemannian space-time is included in this paper.) Investigation of this Kaluza-Klein model reveals two general conditions for establishing an exact equivalence between Kaluza-Klein and Yang-Mills theories. The first condition is that only horizontal vector fields occur in the Kaluza-Klein Lagrangian. The second is that the scalar curvature be restricted to a sum over horizontal sectional curvatures. We conclude that all known fields (including fermion fields) can then be represented as components of a Kaluza-Klein metric together with scalar fields.

Frank Reifler; Randall Morris

2007-07-25T23:59:59.000Z

176

Bin Yang  

NLE Websites -- All DOE Office Websites (Extended Search)

87(6), 2137-2146 (2010). 300 Schlter A, Bekel T, Diaz N et al. The metagenome of a biogas-producing microbial community of a production-scale biogas plant fermenter analysed by...

177

Science and applications of infrared semiconductor nanocrystals  

E-Print Network (OSTI)

In this work we study several applications of semiconductor nanocrystals (NCs) with infrared band gaps. In the first half, we explore the physics of two systems with applications in NC based photovoltaics. The physics of ...

Geyer, Scott Mitchell

2010-01-01T23:59:59.000Z

178

High Aspect Ratio Semiconductor Heterojunction Solar Cells  

E-Print Network (OSTI)

High Aspect Ratio Semiconductor Heterojunction Solar Cells Haoting Shen Prof. Redwing's Research and in-situ dopant for Si nanowires Y. Ke, X.J. Weng, J.M. Redwing, C.M. Eichfeld, T.R. Swisher, S

Yener, Aylin

179

Mospec Semiconductor Corp | Open Energy Information  

Open Energy Info (EERE)

Mospec Semiconductor Corp Mospec Semiconductor Corp Jump to: navigation, search Name Mospec Semiconductor Corp Place Tainan, Taiwan Sector Solar Product Taiwanese semiconductor products producer; offers monocrystalline silicon wafers and as of April 2008, ingots for the solar industry. Coordinates 22.99721°, 120.180862° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":22.99721,"lon":120.180862,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

180

Hemlock Semiconductor Corp HSC | Open Energy Information  

Open Energy Info (EERE)

Hemlock Semiconductor Corp HSC Hemlock Semiconductor Corp HSC Jump to: navigation, search Name Hemlock Semiconductor Corp (HSC) Place Hemlock, Michigan Zip 48626 Sector Solar Product US-based manufacturer polycrystalline silicon for semiconductor and solar industries. Coordinates 39.589497°, -82.153275° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":39.589497,"lon":-82.153275,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Climate VISION: Private Sector Initiatives: Semiconductors  

Office of Scientific and Technical Information (OSTI)

Letters of Intent/Agreements Letters of Intent/Agreements The U.S. semiconductor industry, represented by the members of the Environmental Protection Agency's PFC Reduction/Climate Partnership for the Semiconductor Industry, has committed to reduce absolute perfluorocompound (PFC) emissions by 10% below the 1995 baseline level by the year 2010. Perfluorocompounds include the most potent and long-lived greenhouse gases such as perfluorocarbons (e.g., CF4, C2F6, C3F8), trifluoromethane (CHF3), nitrogen trifluoride (NF3), and sulfur hexafluoride (SF6). The Environmental Protection Agency's (EPA) voluntary semiconductor industry partnership was developed collaboratively with the Semiconductor Industry Association (SIA). EPA, SIA, and the Partner companies (listed below) are working to reduce industry greenhouse gas (GHG) emissions. EPA's

182

Semiconductor-nanocrystal/conjugated polymer thin films  

DOE Patents (OSTI)

The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

Alivisatos, A. Paul (Oakland, CA); Dittmer, Janke J. (Munich, DE); Huynh, Wendy U. (Munich, DE); Milliron, Delia (Berkeley, CA)

2010-08-17T23:59:59.000Z

183

Developing New Nanoprobes from Semiconductor Nanocrystals  

E-Print Network (OSTI)

Water-Soluble Silica- Coated CdSe/ZnS Semiconductor QuantumEnhanced Luminescence of CdSe Quantum Dots on Gold Colloids.CdS/ZnS shells on colloidal CdSe nanorods. Journal Of The

Fu, Aihua

2006-01-01T23:59:59.000Z

184

Thermovoltaic semiconductor device including a plasma filter  

DOE Patents (OSTI)

A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

Baldasaro, Paul F. (Clifton Park, NY)

1999-01-01T23:59:59.000Z

185

Gaining creative control over semiconductor nanowires  

NLE Websites -- All DOE Office Websites (Extended Search)

Gaining creative control over semiconductor nanowires Gaining creative control over semiconductor nanowires Gaining creative control over semiconductor nanowires Using a microfluidic reactor, Los Alamos researchers transformed the SLS process into a flow-based technique. September 26, 2013 Growth of nanowire precursors in a flowing carrier solvent Growth of nanowire precursors in a flowing carrier solvent The new "flow" solution-liquid-solid method allows scientists to slow down growth and thereby capture mechanistic details as the nanowires grow in solution. A Los Alamos research team has transformed the synthesis process of semiconductor nanowires for use in solar cells, batteries, electronics, sensors and photonics using a solution-liquid-solid (SLS) batch approach to achieve unprecedented control over growth rates, nanowire size and internal

186

Wide-Bandgap Compound Semiconductors to Enable Novel Semiconductor Devices  

DOE Green Energy (OSTI)

This report represents the completion of a three-year Laboratory-Directed Research and Development (LDRD) program that focused on research and development of GaN-based wide bandgap semiconductor materials (referred to as III-N materials). Our theoretical investigations include the determination of fundamental materials parameters from first-principles calculations, the study of gain properties of III-N heterostructures using a microscopic laser theory and density-functional-theory, charge-state calculations to determine the core structure and energy levels of dislocations in III-N materials. Our experimental investigations include time-resolved photoluminescence and magneto-luminescence studies of GaN epilayers and multiquantum well samples as well as x-ray diffraction studies of AlGaN ternary alloys. In addition, we performed a number of experiments to determine how various materials processing steps affect both the optical and electrical properties of GaN-based materials. These studies include photoluminescence studies of GaN epilayers after post-growth rapid thermal annealing, ion implantation to produce n- and p-type material and electrical and optical studies of plasma-etched structures.

Crawford, M.H.; Chow, W.W.; Wright, A.F.; Lee, S.R.; Jones, E.D.; Han, J.; Shul, R.J.

1999-04-01T23:59:59.000Z

187

Anomalous Charge Transport in Disordered Organic Semiconductors  

Science Conference Proceedings (OSTI)

Anomalous charge carrier transport in disordered organic semiconductors is studied using fractional differential equations. The connection between index of fractional derivative and dispersion exponent is examined from the perspective of fractional Fokker-Planck equation and its link to the continuous time random walk formalism. The fractional model is used to describe the bi-scaling power-laws observed in the time-of flight photo-current transient data for two different types of organic semiconductors.

Muniandy, S. V.; Woon, K. L. [Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Choo, K. Y. [Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia)

2011-03-30T23:59:59.000Z

188

Optical temperature indicator using thermochromic semiconductors  

DOE Patents (OSTI)

A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

Kronberg, J.W.

1995-01-01T23:59:59.000Z

189

Optical devices featuring nonpolar textured semiconductor layers  

DOE Patents (OSTI)

A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

2013-11-26T23:59:59.000Z

190

Electron gas grid semiconductor radiation detectors  

DOE Patents (OSTI)

An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

Lee, Edwin Y. (Livermore, CA); James, Ralph B. (Livermore, CA)

2002-01-01T23:59:59.000Z

191

Process Metallurgy of Non-Ferrous Metals  

Science Conference Proceedings (OSTI)

Mar 6, 2013 ... Purification of Indium by Vacuum Distillation: Yong Deng1; Bin Yang1; DongSheng Li1; Baoqiang Xu1; Heng Xiong1; 1Kunming University of...

192

Monitoring Access Link Capacity Using TFRC Probe Ling-Jyh Chen, Tony Sun, Guang Yang, M. Y. Sanadidi, Mario Gerla  

E-Print Network (OSTI)

, it is of increasing interest nowadays to achieve an accurate and "on- line" monitoring of link capacity. The basic requirements for capacity estimation and monitoring, we propose TFRC Probe, an on-line capacity monitoringMonitoring Access Link Capacity Using TFRC Probe Ling-Jyh Chen, Tony Sun, Guang Yang, M. Y

Chen, Ling-Jyh

193

An Introduction to Fuel Cells and Related Transport Phenomena Matthew M. Mench, Chao-Yang Wang and Stefan T. Thynell  

E-Print Network (OSTI)

be dried by hot inlet flow, ideally saturated near the middle of the cell, and experiencing flooding near1 An Introduction to Fuel Cells and Related Transport Phenomena Matthew M. Mench, Chao-Yang Wang of fuel cell systems for primary or auxiliary power for stationary, portable, and automotive systems has

Wang, Chao-Yang

194

CO2005 Object-Oriented Programming Using C++ Credits: 10 Convenor: Dr. S. Yang Semester: 2nd  

E-Print Network (OSTI)

CO2005 Object-Oriented Programming Using C++ Credits: 10 Convenor: Dr. S. Yang Semester: 2nd hours Subject Knowledge Aims This module teaches the basic principles of object-oriented programming components of an object-oriented program including methods and attributes, the distinction between classes

Yang, Shengxiang

195

A Multimoment Finite-Volume Shallow-Water Model on the YinYang Overset Spherical Grid  

Science Conference Proceedings (OSTI)

A numerical model for shallow-water equations has been built and tested on the YinYang overset spherical grid. A high-order multimoment finite-volume method is used for the spatial discretization in which two kinds of so-called moments of the ...

Xingliang Li; Dehui Chen; Xindong Peng; Keiko Takahashi; Feng Xiao

2008-08-01T23:59:59.000Z

196

A Manifestly Gauge Invariant, Continuum Calculation of the SU(N) Yang-Mills two-loop beta function  

E-Print Network (OSTI)

The manifestly gauge invariant Exact Renormalisation Group provides a framework for performing continuum computations in SU(N) Yang-Mills theory, without fixing the gauge. We use this formalism to compute the two-loop beta function in a manifestly gauge invariant way, and without specifying the details of the regularisation scheme.

Tim R. Morris; Oliver J. Rosten

2005-08-04T23:59:59.000Z

197

Matrix at slow roll: On the equivalence of the energy spectrum and anomalous dimensions for Yang-Mills models  

E-Print Network (OSTI)

We analyze the low energy limit of the massive version of a BFSS-like matrix model and show that in this limit it is equivalent to the matrix model introduced for description of the spectrum of anomalous dimensions for local gauge invariant composite operators in $\\mathcal{N}=4$ super Yang-Mills

Sochichiu, Corneliu

2010-01-01T23:59:59.000Z

198

Spin Transport in Semiconductor heterostructures  

SciTech Connect

The focus of the research performed under this grant has been the investigation of spin transport in magnetic semiconductor heterostructures. The interest in these systems is motivated both by their intriguing physical properties, as the physical embodiment of a spin-polarized Fermi liquid, as well as by their potential applications as spintronics devices. In our work we have analyzed several different problems that affect the spin dynamics in single and bi-layer spin-polarized two-dimensional (2D) systems. The topics of interests ranged from the fundamental aspects of the electron-electron interactions, to collective spin and charge density excitations and spin transport in the presence of the spin-orbit coupling. The common denominator of these subjects is the impact at the macroscopic scale of the spin-dependent electron-electron interaction, which plays a much more subtle role than in unpolarized electron systems. Our calculations of several measurable parameters, such as the excitation frequencies of magneto-plasma modes, the spin mass, and the spin transresistivity, propose realistic theoretical estimates of the opposite-spin many-body effects, in particular opposite-spin correlations, that can be directly connected with experimental measurements.

Domnita Catalina Marinescu

2011-02-22T23:59:59.000Z

199

Photoelectrochemistry of Semiconductor Nanowire Arrays  

DOE Green Energy (OSTI)

This project supported research on the growth and photoelectrochemical characterization of semiconductor nanowire arrays, and on the development of catalytic materials for visible light water splitting to produce hydrogen and oxygen. Silicon nanowires were grown in the pores of anodic aluminum oxide films by the vapor-liquid-solid technique and were characterized electrochemically. Because adventitious doping from the membrane led to high dark currents, silicon nanowire arrays were then grown on silicon substrates. The dependence of the dark current and photovoltage on preparation techniques, wire diameter, and defect density was studied for both p-silicon and p-indium phosphide nanowire arrays. The open circuit photovoltage of liquid junction cells increased with increasing wire diameter, reaching 350 mV for micron-diameter silicon wires. Liquid junction and radial p-n junction solar cells were fabricated from silicon nano- and microwire arrays and tested. Iridium oxide cluster catalysts stabilized by bidentate malonate and succinate ligands were also made and studied for the water oxidation reaction. Highlights of this project included the first papers on silicon and indium phosphide nanowire solar cells, and a new procedure for making ligand-stabilized water oxidation catalysts that can be covalently linked to molecular photosensitizers or electrode surfaces.

Mallouk, Thomas E; Redwing, Joan M

2009-11-10T23:59:59.000Z

200

A Z2 Structure in the Configuration Space of Yang-Mills Theories  

E-Print Network (OSTI)

We argue for the presence of a Z2 topological structure in the space of static gauge-Higgs field configurations of SU(2n) and SO(2n) Yang-Mills theories. We rigorously prove the existence of a Z2 homotopy group of mappings from the 2-dim. projective sphere RP 2 into SU(2n)/Z2 and SO(2n)/Z2 Lie groups respectively. Consequently the symmetric phase of these theories admits infinite surfaces of odd-parity static and unstable gauge field configurations which divide into two disconnected sectors with integer Chern-Simons numbers n and n + 1/2 respectively. Such a Z2 structure persists in the Higgs phase of the above theories and accounts for the existence of CS = 1/2 odd-parity saddle point solutions to the field equations which correspond to spontaneous symmetry breaking mass scales. 1

Minos Axenides; Andrei Johansen; Jesper Mller

1995-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Performance Tools Harvey Wasserman Woo-Sun Yang NERSC User Services Group  

NLE Websites -- All DOE Office Websites (Extended Search)

Optimization and Optimization and Performance Tools Harvey Wasserman Woo-Sun Yang NERSC User Services Group Cray XE6 Workshop February 7-8, 2011 NERSC Oakland Scientific Facility Outline * Introduction, motivation, some terminology * Using CrayPat * Using Apprentice2 * Hands-on lab 2 Why Analyze Performance? * Improving performance on HPC systems has compelling economic and scientific rationales. - Dave Bailey: Value of improving performance of a single application, 5% of machine's cycles by 20% over 10 years: $1,500,000 - Scientific benefit probably much higher * Goal: solve problems faster; solve larger problems * Accurately state computational need * Only that which can be measured can be improved * The challenge is mapping the application to an increasingly

202

Using CrayPat Woo-Sun Yang NERSC User Services Group NUG Training  

NLE Websites -- All DOE Office Websites (Extended Search)

CrayPat CrayPat Woo-Sun Yang NERSC User Services Group NUG Training February 1-2, 2012 NERSC Oakland Scientific Facility Introduction to CrayPat * Two types of collecting code performance data - Sampling * Typically, sampling program counters (locations in the code) at specified time intervals * A few different variants exist in sampling methods * Can see how much time was spent in each function - Tracing * Focus placed on individual functions * Records performance data on entry to and exit from specified functions * More accurate about performance of the function * Need to specify which functions to trace 2 Introduction to CrayPat (cont'd) * CrayPat can perform "sampling" or "tracing" experiments - Need to build an executable accordingly

203

Vortex Ring Dyons of the SU(2) Yang-Mills-Higgs Model  

Science Conference Proceedings (OSTI)

We present an axially symmetric vortex ring dyons solutions of the SU(2) Yang-Mills-Higgs theory. These vortex rings carry electric charges that are determined by a parameter, -1{<=}{eta}{<=}1. They possess vanishing magnetic charge and are located at a ring centered around the z-axis where the Higgs field vanishes. These stationary vortex ring dyon solutions possess finite energy but they do not satisfy the first order Bogomol'nyi equations. In the Bogomol'nyi-Prasad-Sommerfield (BPS) limit where the Higgs field potential is zero, the time component of the gauge field is parallel to the Higgs field in isospace. The total energy, net electric charge and diameter of the vortex ring increase exponentially to infinity when {eta} approaches {+-}1. On the contrary, when {lambda} = 1, all these three values reach their critical value as {eta} approaches {+-}1.

Lim, Kok-Geng; Teh, Rosy; Wong, Khai-Ming [School of Physics, Universiti Sains Malaysia 11800 USM Penang (Malaysia)

2011-03-30T23:59:59.000Z

204

Holographic thermalization in N=4 Super Yang-Mills theory at finite coupling  

E-Print Network (OSTI)

We investigate the behavior of the energy momentum tensor correlators in holographic N=4 Super Yang-Mills plasma, taking finite coupling corrections into account. In the thermal limit we determine the flow of the quasinormal modes as a function of the 't Hooft coupling. Then we use a specific model of holographic thermalization to study the deviation of the spectral density from its thermal limit in an out-of-equilibrium situation. The main focus lies on the thermalization pattern with which the plasma constituents approach their thermal distribution as the coupling constant decreases from the infinite coupling limit. All obtained results point towards a weakening of the usual top-down thermalization pattern.

Stricker, Stefan A

2013-01-01T23:59:59.000Z

205

Supersymmetric Yang Mills Fields and Black Holes ; In Ten Dimensional Unified Field Theory  

E-Print Network (OSTI)

The Ten dimensional Unified field theory has a 4 dimensional Riemannian spacetime and six dimensional Calabi Yau space structure. The supersymmetric Yang Mills fields and black holes are solutions in these theories. The formation of primordial black holes in early universe, the collapse to singularity of stellar black holes, the Hawking evaporation of microscopic black holes in LHC are topics of observational and theoretical interest. The observation of gamma ray bursts and creation of spectrum of particles and radiation of dark and normal matter occur due to primordial and microscopic black holes. The approach to singularity in black hole interior solutions, require the Bogoliubov transforms of SUSY YM fields in black hole geometries; both during formation and in evaporation. The Hawking effect of radiating black holes is applicable for all the fields. Invariants can be defined to give the conditions for these processes.

Ajay Patwardhan

2007-05-17T23:59:59.000Z

206

SU(2) Yang-Mills Theory in Savvidy Background at Finite Temperature and Chemical Potential  

E-Print Network (OSTI)

The one-loop effective energy density of a pure SU(2) Yang-Mills theory in the Savvidy background, at finite temperature and chemical potential is examined with emphasis on the unstable modes. After identifying the stable and unstable modes, the stable modes are treated in the quadratic approximation. For the unstable modes, the full expansion including the cubic and the quartic terms in the fluctuations is used. The functional integrals for the unstable modes are evaluated and added to the results for the stable modes. The resulting energy density is found to be {\\it{real}}, coinciding with the real part of the energy density in the quadratic approximation of earlier study. There is now {\\it{no imaginary part.}} Numerical results are presented for the variation of the energy density with temperature for various choices of the chemical potential.

R. Parthasarathy; Alok Kumar

2006-09-13T23:59:59.000Z

207

R-Matrices, Yetter-Drinfel$'$d Modules and Yang-Baxter Equation.  

E-Print Network (OSTI)

In the first part we recall two famous sources of solutions to the Yang-Baxter equation -- R-matrices and Yetter-Drinfel$'$d (=YD) modules -- and an interpretation of the former as a particular case of the latter. We show that this result holds true in the more general case of weak R-matrices, introduced here. In the second part we continue exploring the ''braided'' aspects of YD module structure, exhibiting a braided system encoding all the axioms from the definition of YD modules. The functoriality and several generalizations of this construction are studies using the original machinery of YD systems. As consequences, we get a conceptual interpretation of the tensor product structures for YD modules, and a generalization of the deformation cohomology of YD modules. The latter homology theory is thus included into the unifying framework of braided homologies, which contains among others Hochschild, Chevalley-Eilenberg, Gerstenhaber-Schack and quandle homologies.

Victoria Lebed (IMJ)

208

Geometry and heterogeneous effects on the neutronic performance of a Yin Yang mirror-reactor blanket  

SciTech Connect

From 5th symposium on engineering problems of fusion research; Princeton, New Jersey, USA (6 Nov 1973). Two-dimensional models and Monte Carlo neutron transport techniques were used to calculate the tritium breeding and energy generation in a mirror-reactor blanket. Results indicate that blanket performance should be quite insensitive to variations in overall geometry as long as there are no large neutron-leakage paths. Injection and leakage penetration can be accommodated as long as the first-wall peneiration area subtends less than 25% of the first wall's spherical area. Heterogeneous and streaming effects in a tubular blanket can be important, but are negligible for closely packed arrays of tubes. The one-dimensional homogeneous spherical-shell model appears to be a useful tool for predicting performance of a tubular blanket conforming to the YinYang mirror geometry. (auth)

Lee, J.D.

1973-10-17T23:59:59.000Z

209

Yang-Mills theory over surfaces and the Atiyah-Segal theorem.  

E-Print Network (OSTI)

In this paper we explain how Morse theory for the Yang-Mills functional can be used to prove an analogue, for surface groups, of the Atiyah-Segal theorem. Classically, the Atiyah-Segal theorem relates the representation ring R(\\Gamma) of a compact Lie group $\\Gamma$ to the complex K-theory of the classifying space $B\\Gamma$. For infinite discrete groups, it is necessary to take into account deformations of representations, and with this in mind we replace the representation ring by Carlsson's deformation $K$--theory spectrum $\\K (\\Gamma)$ (the homotopy-theoretical analogue of $R(\\Gamma)$). Our main theorem provides an isomorphism in homotopy $\\K_*(\\pi_1 \\Sigma)\\isom K^{-*}(\\Sigma)$ for all compact, aspherical surfaces $\\Sigma$ and all $*>0$. Combining this result with work of Tyler Lawson, we obtain homotopy theoretical information about the stable moduli space of flat unitary connections over surfaces.

Daniel A. Ramras.; no. 4; 2209-2251

210

Screening masses in quenched (2+1)d Yang-Mills theory: universality from dynamics?  

E-Print Network (OSTI)

We compute the spectrum of gluonic screening-masses in the $0^{++}$ channel of quenched 3d Yang-Mills theory near the phase-transition. Our finite-temperature lattice simulations are performed at scaling region, using state-of-art techniques for thermalization and spectroscopy, which allows for thorough data extrapolations to thermodynamic limit. Ratios among mass-excitations with the same quantum numbers on the gauge theory, 2d Ising and $\\lambda\\phi^{4}$ models are compared, resulting in a nice agreement with predictions from universality. In addition, a gauge-to-scalar mapping, previously employed to fit QCD Green's functions at deep IR, is verified to dynamically describe these universal spectroscopic patterns

Rafael B. Frigori

2009-12-15T23:59:59.000Z

211

Screening masses in quenched (2+1)d Yang-Mills theory: universality from dynamics?  

E-Print Network (OSTI)

We compute the spectrum of gluonic screening-masses in the $0^{++}$ channel of quenched 3d Yang-Mills theory near the phase-transition. Our finite-temperature lattice simulations are performed at scaling region, using state-of-art techniques for thermalization and spectroscopy, which allows for thorough data extrapolations to continuum limit. Ratios among mass-excitations with the same quantum numbers on the gauge theory, 2d Ising and $\\lambda\\phi^{4}$ models are compared, resulting in a nice agreement with predictions from universality. In addition, a gauge-to-scalar mapping, previously employed to fit QCD Green's functions at deep IR, is verified to dynamically describe these universal spectroscopic patterns.

Frigori, Rafael B

2009-01-01T23:59:59.000Z

212

SO(4,1) Yang-Mills theory of quantum gravity  

E-Print Network (OSTI)

The search for a quantum theory of gravity has become one of the most well-known problems in theoretical physics. Problems quantizing general relativity because it is not renormalizable have led to a search for a new theory of gravity that, while still agreeing with measured observations, is renormalizable. In this paper, a spin-1 Yang-Mills force theory with a SO(4,1) or {\\em de Sitter} group symmetry is developed. By deriving the standard geodesic equation and the first post-Newtonian approximation equations, it is shown that this theory, coupled to Dirac fields, predicts all N-body and light observations of gravitational phenomena to within experimental accuracy. Furthermore, because of the separation of gauge covariance from coordinate diffeomorphism, the theory satisfies the strong equivalence principle while maintaining a Minkowski coordinate metric. Cosmology is also briefly addressed: Vacuum energy is the most common explanation for the accelerating expansion of the universe but suffers from the drawback that any reasonable prediction of it is 120 orders of magnitude too large. The de Sitter solution to the Einstein Field Equations is an alternative to vacuum energy as an explanation for the accelerating expansion of the universe but only if the universe is approximately a vacuum. The proposed gauge theory, however, avoids both these problems and, cosmologically, the accelerating expansion of the universe is shown as a consequence of the de Sitter group Lie algebra. In addition, with quantized mass, because it is a generic massless, semi-simple Yang-Mills theory, it is mathematically proved to be a perturbatively renormalizable quantum theory of gravity.

Timothy D. Andersen

2010-05-21T23:59:59.000Z

213

Sandia National Labs: PCNSC: Departments: Semiconductor and Optical  

NLE Websites -- All DOE Office Websites (Extended Search)

Semiconductor & Optical Sciences Semiconductor & Optical Sciences > Semiconductor Material & Device Sciences > Advanced Materials Sciences > Lasers, Optics & Remote Sensing Energy Sciences Small Science Cluster Business Office News Partnering Research Jeff Nelson Jerry A. Simmons Sr. Manager Idabelle Idabelle Courtney Admin. Asst. Departments Semiconductor and Optical Sciences The Semiconductor and Optical Sciences Department oversees the operations of the following departments providing new scientific knowledge that can lead to technology solutions in the areas of: Compound semiconductor optoelectronic materials and devices Chemical science to materials technologies, emphasizing the science and engineering of Metal Organic Chemical Vapor Deposition (MOCVD) Remote sensing and detection of WMD proliferation activities

214

High-power semiconductor separate-confinement double heterostructure lasers  

Science Conference Proceedings (OSTI)

The review is devoted to high-power semiconductor lasers. Historical reference is presented, physical and technological foundations are considered, and the concept of high-power semiconductor lasers is formulated. Fundamental and technological reasons limiting the optical power of a semiconductor laser are determined. The results of investigations of cw and pulsed high-power semiconductor lasers are presented. Main attention is paid to inspection of the results of experimental studies of single high-power semiconductor lasers. The review is mainly based on the data obtained in the laboratory of semiconductor luminescence and injection emitters at the A.F. Ioffe Physicotechnical Institute. (review)

Tarasov, I S [A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

2010-10-15T23:59:59.000Z

215

Method for removing semiconductor layers from salt substrates  

DOE Patents (OSTI)

A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.

Shuskus, Alexander J. (West Hartford, CT); Cowher, Melvyn E. (East Brookfield, MA)

1985-08-27T23:59:59.000Z

216

Light sources based on semiconductor current filaments  

DOE Patents (OSTI)

The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

Zutavern, Fred J. (Albuquerque, NM); Loubriel, Guillermo M. (Albuquerque, NM); Buttram, Malcolm T. (Sandia Park, NM); Mar, Alan (Albuquerque, NM); Helgeson, Wesley D. (Albuquerque, NM); O' Malley, Martin W. (Edgewood, NM); Hjalmarson, Harold P. (Albuquerque, NM); Baca, Albert G. (Albuquerque, NM); Chow, Weng W. (Cedar Crest, NM); Vawter, G. Allen (Albuquerque, NM)

2003-01-01T23:59:59.000Z

217

Zecon Solar Semiconductor Inc | Open Energy Information  

Open Energy Info (EERE)

Zecon Solar Semiconductor Inc Zecon Solar Semiconductor Inc Jump to: navigation, search Name Zecon Solar & Semiconductor Inc Place Cupertino, California Zip 95014 Sector Solar Product Focused on large-scale solar building integrated PV systems. Coordinates 37.31884°, -122.029244° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.31884,"lon":-122.029244,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

218

Atomic hydrogen cleaning of semiconductor photocathodes  

DOE Green Energy (OSTI)

Negative Electron Affinity (NEA) semiconductor photocathodes are widely used for the production of polarized electron beams, and are also useful for the production of high brightness electron beams which can be modulated at very high frequencies. Preparation of an atomically clean semiconductor surface is an essential step in the fabrication of a NEA photocathode. This cleaning step is difficult for certain semiconductors, such as the very thin materials which produce the highest beam polarization, and those which have tightly bound oxides and carbides. Using a small RF dissociation atomic hydrogen source, the authors have reproducibly cleaned GaAs wafers which have been only degreased prior to installation in vacuum. They have consistently prepared very high quantum efficiency photocathodes following atomic hydrogen cleaning. Details of their apparatus and most recent results are presented.

Sinclair, C.K.; Poelker, B.M.; Price, J.S. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)

1997-06-01T23:59:59.000Z

219

Substrate solder barriers for semiconductor epilayer growth  

DOE Patents (OSTI)

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In molecular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating. 1 tab.

Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

1987-10-23T23:59:59.000Z

220

Emissivity Correcting Pyrometry of Semiconductor Growth  

NLE Websites -- All DOE Office Websites (Extended Search)

Emissivity Correcting Pyrometry of Semiconductor Growth Emissivity Correcting Pyrometry of Semiconductor Growth by W. G. Breiland, L. A. Bruskas, A. A. Allerman, and T. W. Hargett Motivation-Temperature is a critical factor in the growth of thin films by either chemical vapor deposition (CVD) or molecular beam epitaxy (MBE). It is particularly important in compound semiconductor growth because one is often challenged to grow materials with specific chemical compositions in order to maintain stringent lattice-matching conditions or to achieve specified bandgap values. Optical pyrometry can be used to measure surface temperatures, but the thin film growth causes significant changes in the emissivity of the surface, leading to severe errors in the pyrometer measurement. To avoid these errors, emissivity changes must be measured and

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Semiconductor Equipment and Materials International SEMI | Open Energy  

Open Energy Info (EERE)

Semiconductor Equipment and Materials International SEMI Semiconductor Equipment and Materials International SEMI Jump to: navigation, search Name Semiconductor Equipment and Materials International (SEMI) Place San Jose, California Zip 95134 2127 Product Global trade association, publisher and conference organiser representing the semiconductor and flat panel display equipment manufacturers. References Semiconductor Equipment and Materials International (SEMI)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Semiconductor Equipment and Materials International (SEMI) is a company located in San Jose, California . References ↑ "Semiconductor Equipment and Materials International (SEMI)" Retrieved from "http://en.openei.org/w/index.php?title=Semiconductor_Equipment_and_Materials_International_SEMI&oldid=350739

222

Coherent optical control of electronic excitations in functionalized semiconductor nanostructures  

Science Conference Proceedings (OSTI)

The feasibility of creating and manipulating coherent quantum states on surfaces offunctionalized semiconductor nanostructures is computationally investigated. Quantumdynamics simulations of electron-hole transfer between catechol molecules adsorbed ... Keywords: adsorbates, coherent control, semiconductors, wave-packet dynamics

L. G. C. Rego; S. G. Abuabara; V. S. Batista

2005-07-01T23:59:59.000Z

223

Business Case Slide 27: High-Value: Semiconductors - Basis for...  

NLE Websites -- All DOE Office Websites (Extended Search)

Semiconductors - Basis for Use Basis for use DUO2 has good electronic properties for semi-conductor applications Have made and tested a diode and transistor which appear superior...

224

Business Case Slide 25: High-Value: Semiconductors - Description  

NLE Websites -- All DOE Office Websites (Extended Search)

Semiconductors - Description Receipt of rare DUO crystals at ORNL Receipt of rare DUO2 crystals at ORNL Description Use DUO2 as a semiconductor material Computer CPU or RAM chips...

225

Surface passivation process of compound semiconductor material using UV photosulfidation  

DOE Patents (OSTI)

A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

Ashby, Carol I. H. (Edgewood, NM)

1995-01-01T23:59:59.000Z

226

Lattice mismatched compound semiconductors and devices on silicon  

E-Print Network (OSTI)

III-V compound semiconductors, due to their superior electron mobility, are promising candidates for n-type metal-oxide-semiconductor field effect transistors (MOSFETs). However, the limited size of III-V substrates and ...

Yang, Li, Ph. D. Massachusetts Institute of Technology

2011-01-01T23:59:59.000Z

227

Taiwan Semiconductor Manufacturing Co Ltd TSMC | Open Energy Information  

Open Energy Info (EERE)

Semiconductor Manufacturing Co Ltd TSMC Semiconductor Manufacturing Co Ltd TSMC Jump to: navigation, search Name Taiwan Semiconductor Manufacturing Co Ltd (TSMC) Place Hsinchu, Taiwan Zip 300 Sector Solar Product Taiwan-based semiconductor company. The firm is also venturing into solar and LED production. References Taiwan Semiconductor Manufacturing Co Ltd (TSMC)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Taiwan Semiconductor Manufacturing Co Ltd (TSMC) is a company located in Hsinchu, Taiwan . References ↑ "Taiwan Semiconductor Manufacturing Co Ltd (TSMC)" Retrieved from "http://en.openei.org/w/index.php?title=Taiwan_Semiconductor_Manufacturing_Co_Ltd_TSMC&oldid=352012"

228

Method Of Transferring A Thin Crystalline Semiconductor Layer  

NLE Websites -- All DOE Office Websites (Extended Search)

Method Of Transferring A Thin Crystalline Semiconductor Layer Method Of Transferring A Thin Crystalline Semiconductor Layer Method Of Transferring A Thin Crystalline Semiconductor Layer A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. Available for thumbnail of Feynman Center (505) 665-9090 Email Method Of Transferring A Thin Crystalline Semiconductor Layer A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure

229

Blasting detonators incorporating semiconductor bridge technology  

SciTech Connect

The enormity of the coal mine and extraction industries in Russia and the obvious need in both Russia and the US for cost savings and enhanced safety in those industries suggests that joint studies and research would be of mutual benefit. The author suggests that mine sites and well platforms in Russia offer an excellent opportunity for the testing of Sandia`s precise time-delay semiconductor bridge detonators, with the potential for commercialization of the detonators for Russian and other world markets by both US and Russian companies. Sandia`s semiconductor bridge is generating interest among the blasting, mining and perforation industries. The semiconductor bridge is approximately 100 microns long, 380 microns wide and 2 microns thick. The input energy required for semiconductor bridge ignition is one-tenth the energy required for conventional bridgewire devices. Because semiconductor bridge processing is compatible with other microcircuit processing, timing and logic circuits can be incorporated onto the chip with the bridge. These circuits can provide for the precise timing demanded for cast effecting blasting. Indeed tests by Martin Marietta and computer studies by Sandia have shown that such precise timing provides for more uniform rock fragmentation, less fly rock, reduce4d ground shock, fewer ground contaminants and less dust. Cost studies have revealed that the use of precisely timed semiconductor bridges can provide a savings of $200,000 per site per year. In addition to Russia`s vast mineral resources, the Russian Mining Institute outside Moscow has had significant programs in rock fragmentation for many years. He anticipated that collaborative studies by the Institute and Sandia`s modellers would be a valuable resource for field studies.

Bickes, R.W. Jr.

1994-05-01T23:59:59.000Z

230

Metal Oxide Semiconductor Nanoparticles Open the Door to ...  

Using metal oxide semiconductor nanoparticles to target and control biological molecules could fuel medical breakthroughs in many areas, including ...

231

Method of physical vapor deposition of metal oxides on semiconductors  

DOE Patents (OSTI)

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

Norton, David P. (Knoxville, TN)

2001-01-01T23:59:59.000Z

232

Yang-Lee Zeros of the Two- and Three-State Potts Model Defined on $?^3$ Feynman Diagrams  

E-Print Network (OSTI)

We present both analytic and numerical results on the position of the partition function zeros on the complex magnetic field plane of the $q=2$ (Ising) and $q=3$ states Potts model defined on $\\phi^3 $ Feynman diagrams (thin random graphs). Our analytic results are based on the ideas of destructive interference of coexisting phases and low temperature expansions. For the case of the Ising model an argument based on a symmetry of the saddle point equations leads us to a nonperturbative proof that the Yang-Lee zeros are located on the unit circle, although no circle theorem is known in this case of random graphs. For the $q=3$ states Potts model our perturbative results indicate that the Yang-Lee zeros lie outside the unit circle. Both analytic results are confirmed by finite lattice numerical calculations.

Luiz C. de Albuquerque; D. Dalmazi

2002-06-25T23:59:59.000Z

233

Gluon propagators in the deep IR region and non-Abelian dual superconductivity for SU(3) Yang-Mills  

E-Print Network (OSTI)

We have presented non-Abelian dual superconductivity picture in the SU(3) Yang-Mills(YM) theory, and shown evidences such as the restricted U(2)-field dominance and the non-Abelian magnetic monopole dominance in the string tension. To establish the dual superconductivity picture, the dual Meissner effect in Yang-Mills theory must be examined, and we also presented the evidence of non-Abelian dual Meissner effect by measuring chromo-electric flux tube in the last lattice conferences. In this talk, by applying a new formulation of the YM theory on a lattice, the we further investigate the non-Abelian dual Meissner effect for SU(3) YM theory through correlation function. We examine non-abelian magnetic monopole currents as well as color flux created by the quark-antiquark source.

Akihiro Shibata; Kei-Ichi Kondo; Seikou Kato; Toru Shinohara

2012-12-12T23:59:59.000Z

234

Lattice Study of the Extent of the Conformal Window in Two-Color Yang-Mills Theory  

E-Print Network (OSTI)

We perform a lattice calculation of the Schr\\"odinger functional running coupling in SU(2) Yang-Mills theory with six massless Wilson fermions in the fundamental representation. The aim of this work is to determine whether the above theory has an infrared fixed point. Due to sensitivity of the $SF$ renormalized coupling to the tuning of the fermion bare mass we were unable to reliably extract the running coupling for stronger bare couplings.

Gennady Voronov

2013-01-17T23:59:59.000Z

235

High resolution scintillation detector with semiconductor readout  

DOE Patents (OSTI)

A novel high resolution scintillation detector array for use in radiation imaging such as high resolution Positron Emission Tomography (PET) which comprises one or more parallelepiped crystals with at least one long surface of each crystal being in intimate contact with a semiconductor photodetector such that photons generated within each crystal by gamma radiation passing therethrough is detected by the photodetector paired therewith.

Levin, Craig S. (Santa Monica, CA); Hoffman, Edward J. (Los Angeles, CA)

2000-01-01T23:59:59.000Z

236

Semiconductor diode with external field modulation  

DOE Patents (OSTI)

A non-destructive-readout nonvolatile semiconductor diode switching device that may be used as a memory element is disclosed. The diode switching device is formed with a ferroelectric material disposed above a rectifying junction to control the conduction characteristics therein by means of a remanent polarization. The invention may be used for the formation of integrated circuit memories for the storage of information.

Nasby, Robert D. (Albuquerque, NM)

2000-01-01T23:59:59.000Z

237

Electrical Usage Characterization of Semiconductor Processing Tools  

E-Print Network (OSTI)

This paper presents the basic concepts in performing an energy and power audit of a semiconductor process tool. A protocol exists that fully describes these measurements and their use and applicability and it will be described. This protocol is currently being examined by SEMATECH for future publication. Example data will be presented showing the power, energy, and current load profiles of a typical tool.

Hinson, S. R.

2000-04-01T23:59:59.000Z

238

Preparation of III-V semiconductor nanocrystals  

DOE Patents (OSTI)

Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.

Alivisatos, A. Paul (Berkeley, CA); Olshavsky, Michael A. (Brunswick, OH)

1996-01-01T23:59:59.000Z

239

Optical temperature sensor using thermochromic semiconductors  

DOE Patents (OSTI)

Optical thermometry is a growing technological field which exploits the ability of certain materials to change their optical properties with temperature. A subclass of such materials are those which change their color as a reversible and reproducible function of temperature. These materials are thermochromic. This invention is a composition to measure temperature utilizing thermochromic semiconductors.

Kronberg, J.W.

1994-01-01T23:59:59.000Z

240

Organic conductive films for semiconductor electrodes  

DOE Patents (OSTI)

According to the present invention, improved electrodes overcoated with conductive polymer films and preselected catalysts are provided. The electrodes typically comprise an inorganic semiconductor overcoated with a charge conductive polymer film comprising a charge conductive polymer in or on which is a catalyst or charge-relaying agent.

Frank, Arthur J. (Lakewood, CO)

1984-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Non-Abelian dual superconductivity and Gluon propagators in the deep IR region for SU(3) Yang-Mills theory  

E-Print Network (OSTI)

We have proposed the non-Abelian dual superconductivity picture for quark confinement in the SU(3) Yang-Mills (YM) theory, and have given numerical evidences for the restricted-field dominance and the non-Abelian magnetic monopole dominance in the string tension by applying a new formulation of the YM theory on a lattice. To establish the non-Abelian dual superconductivity picture for quark confinement, we have observed the non-Abelian dual Meissner effect in the SU(3) Yang-Mills theory by measuring the chromoelectric flux created by the quark-antiquark source, and the non-Abelian magnetic monopole currents induced around the flux. We conclude that the dual superconductivity of the SU(3) Yang-Mills theory is strictly the type I and that this type of dual superconductivity is reproduced by the restricted field and the non-Abelian magnetic monopole part, in sharp contrast to the SU(2) case: the border of type I and type II.

Akihiro Shibata; Kei-Ichi Kondo; Seikou Kato; Toru Shinohara

2013-02-27T23:59:59.000Z

242

Vacuum Polarization Effects in the Global Monopole Spacetime in the Presence of Wu-Yang Magnetic Monopole  

E-Print Network (OSTI)

In this paper we consider the presence of the Wu-Yang magnetic monopole in the global monopole spacetime and their influence on the vacuum polarization effects around these two monopoles placed together. According to Wu-Yang [Nucl. Phys. {\\bf B107}, 365 (1976)] the solution of the Klein-Gordon equation in such an external field will not be an ordinary function but, instead, {\\it section}. Because of the peculiar radial symmetry of the global monopole spacetime, it is possible to cover its space section by two overlapping regions, needed to define the singularity free vector potential, and to study the quantum effects due to a charged scalar field in this system. In order to develop this analysis we construct the explicit Euclidean scalar Green {\\it section} associated with a charged massless field in a global monopole spacetime in the presence of the Abelian Wu-Yang magnetic monopole. Having this Green section it is possible to study the vacuum polarization effects. We explicitly calculate the renormalized vacuum expectation value $Phi(x)^*\\Phi(x) >_{Ren.}$, associated with a charged scalar field operator and the respective energy-momentum tensor, $_{Ren.}$, which are expressed in terms of the parameter which codify the presence of the global and magnetic monopoles.

E. R. Bezerra de Mello

2002-07-05T23:59:59.000Z

243

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

244

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

245

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

246

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

247

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

248

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

249

Isotopically engineered semiconductors: from the bulk tonanostructures  

SciTech Connect

Research performed with semiconductors with controlled isotopic composition is evolving from the measurement of fundamental properties in the bulk to those measured in superlattices and nanostructures. This is driven in part by interests associated with the fields of 'spintronics' and quantum computing. In this topical review, which is dedicated to Prof. Abstreiter, we introduce the subject by reviewing classic and recent measurements of phonon frequencies, thermal conductivity, bandgap renormalizations, and spin coherence lifetimes in isotopically controlled bulk group IV semiconductors. Next, we review phonon properties measured in isotope heterostructures, including pioneering work made possible by superlattices grown by the group of Prof. Abstreiter. We close the review with an outlook on the exciting future possibilities offered through isotope control in 1, 2, and 3 dimensions that will be possible due to advances in nanoscience.

Ager III, Joel W.; Haller, Eugene E.

2006-04-07T23:59:59.000Z

250

Semiconductor P-I-N detector  

DOE Patents (OSTI)

A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

Sudharsanan, Rengarajan (53 Timber Line Dr., Nashua, NH 03062); Karam, Nasser H. (577 Lowell St., Lexington, MA 02173)

2001-01-01T23:59:59.000Z

251

Proximity charge sensing for semiconductor detectors  

SciTech Connect

A non-contact charge sensor includes a semiconductor detector having a first surface and an opposing second surface. The detector includes a high resistivity electrode layer on the first surface and a low resistivity electrode on the high resistivity electrode layer. A portion of the low resistivity first surface electrode is deleted to expose the high resistivity electrode layer in a portion of the area. A low resistivity electrode layer is disposed on the second surface of the semiconductor detector. A voltage applied between the first surface low resistivity electrode and the second surface low resistivity electrode causes a free charge to drift toward the first or second surface according to a polarity of the free charge and the voltage. A charge sensitive preamplifier coupled to a non-contact electrode disposed at a distance from the exposed high resistivity electrode layer outputs a signal in response to movement of free charge within the detector.

Luke, Paul N; Tindall, Craig S; Amman, Mark

2013-10-08T23:59:59.000Z

252

Semiconductor Manufacturing International Corp SMIC | Open Energy  

Open Energy Info (EERE)

Manufacturing International Corp SMIC Manufacturing International Corp SMIC Jump to: navigation, search Name Semiconductor Manufacturing International Corp (SMIC) Place Shanghai, Shanghai Municipality, China Zip 201203 Sector Solar Product Semiconductor group launching solar cell production from its recycled silicon wafers. Coordinates 31.247709°, 121.472618° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.247709,"lon":121.472618,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

253

GaTe semiconductor for radiation detection  

SciTech Connect

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

254

Semiconductor junction formation by directed heat  

DOE Patents (OSTI)

The process of the invention includes applying precursors 6 with N- and P-type dopants therein to a silicon web 2, with the web 2 then being baked in an oven 10 to drive off excessive solvents, and the web 2 is then heated using a pulsed high intensity light in a mechanism 12 at 1100.degree.-1150.degree. C. for about 10 seconds to simultaneously form semiconductor junctions in both faces of the web.

Campbell, Robert B. (Pittsburgh, PA)

1988-03-24T23:59:59.000Z

255

Fuzzy Logic Connectivity in Semiconductor Defect Clustering  

Science Conference Proceedings (OSTI)

In joining defects on semiconductor wafer maps into clusters, it is common for defects caused by different sources to overlap. Simple morphological image processing tends to either join too many unrelated defects together or not enough together. Expert semiconductor fabrication engineers have demonstrated that they can easily group clusters of defects from a common manufacturing problem source into a single signature. Capturing this thought process is ideally suited for fuzzy logic. A system of rules was developed to join disconnected clusters based on properties such as elongation, orientation, and distance. The clusters are evaluated on a pair-wise basis using the fuzzy rules and are joined or not joined based on a defuzzification and threshold. The system continuously re-evaluates the clusters under consideration as their fuzzy memberships change with each joining action. The fuzzy membership functions for each pair-wise feature, the techniques used to measure the features, and methods for improving the speed of the system are all developed. Examples of the process are shown using real-world semiconductor wafer maps obtained from chip manufacturers. The algorithm is utilized in the Spatial Signature Analyzer (SSA) software, a joint development project between Oak Ridge National Lab (ORNL) and SEMATECH.

Gleason, S.S.; Kamowski, T.P.; Tobin, K.W.

1999-01-24T23:59:59.000Z

256

Visible-wavelength semiconductor lasers and arrays  

DOE Patents (OSTI)

A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

Schneider, Jr., Richard P. (Albuquerque, NM); Crawford, Mary H. (Albuquerque, NM)

1996-01-01T23:59:59.000Z

257

dg-ga/9411007 Math. Z., to appear. THE SINGULARITIES OF YANG-MILLS CONNECTIONS FOR BUNDLES ON A SURFACE. II. THE STRATIFICATION  

E-Print Network (OSTI)

Abstract. Let ? be a closed surface, G a compact Lie group, not necessarily connected, with Lie algebra g, endowed with an adjoint action invariant scalar product, let ?: P ? ? be a principal G-bundle, and pick a Riemannian metric and orientation on ? so that the corresponding Yang-Mills equations are defined. In an earlier paper we determined the local structure of the moduli space N(?) of central Yang-Mills connections on ? near an arbitrary point. Here we show that the decomposition of N(?) into connected components of orbit types of central Yang-Mills connections is a stratification in the strong (i. e. Whitney) sense; furthermore each stratum, being a smooth manifold, inherits a finite volume symplectic structure from the given data. This complements, in a way, results of Atiyah-Bott in that it will in general decompose further the critical sets of the corresponding Yang-Mills functional into smooth pieces. 1991 Mathematics Subject Classification. 14D20, 32G13, 32S60, 58C27, 58D27, 58E15, 81T13. Key words and phrases. Geometry of principal bundles, singularities of smooth mappings, symplectic reduction with singularities, Yang-Mills connections, stratified symplectic space, Poisson structure, geometry of moduli spaces, representation spaces, moduli of vector bundles. The author carried out this work in the framework of the VBAC research group of Europroj. 2 JOHANNES HUEBSCHMANN

Johannes Huebschmann

1993-01-01T23:59:59.000Z

258

Wide Bandgap Semiconductors: Essential to Our Technology Future |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Wide Bandgap Semiconductors: Essential to Our Technology Future Wide Bandgap Semiconductors: Essential to Our Technology Future Wide Bandgap Semiconductors: Essential to Our Technology Future January 15, 2014 - 8:00am Addthis Learn how wide bandgap semiconductors could impact clean energy technology and our daily lives. | Video by Sarah Gerrity and Matty Greene, Energy Department. Dr. Ernest Moniz Dr. Ernest Moniz Secretary of Energy What are the key facts? North Carolina State University will lead the Energy Department's new manufacturing innovation institute for the next generation of power electronics, focusing on wide bandgap (WBG) semiconductors. Building America's leadership in WBG semiconductor manufacturing while driving down the cost of the technology could lead to more affordable products for businesses and consumers, billions of dollars in energy

259

Climate VISION: Private Sector Initiatives: Semiconductors: Resources and  

Office of Scientific and Technical Information (OSTI)

Semiconductor Industry Association (SIA) The Semiconductor Industry Association (SIA) is the premier trade association representing the U.S. semiconductor industry. Founded in 1977 by five microelectronics innovators, the SIA has grown to include over 100 companies that account for more than 83% of U.S.-based semiconductor production. The SIA provides a forum for domestic semiconductor companies to work collectively to advance the competitiveness of the $70 billion U.S. chip industry. Through its national and international network of chief executive officers and working committees, the SIA shapes public policy on issues important to the industry and provides a spectrum of services to help its members grow their businesses. World Semiconductor Council (WSC)

260

Semiconductor and Materials Company Inc SAMCO | Open Energy Information  

Open Energy Info (EERE)

and Materials Company Inc SAMCO and Materials Company Inc SAMCO Jump to: navigation, search Name Semiconductor and Materials Company Inc (SAMCO) Place Kyoto, Kyoto, Japan Zip 612-8443 Sector Solar Product Japanese manufactruer of semiconductor and solar manufacturing equipment such as etching, deposition and cleaning systems. References Semiconductor and Materials Company Inc (SAMCO)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Semiconductor and Materials Company Inc (SAMCO) is a company located in Kyoto, Kyoto, Japan . References ↑ "Semiconductor and Materials Company Inc (SAMCO)" Retrieved from "http://en.openei.org/w/index.php?title=Semiconductor_and_Materials_Company_Inc_SAMCO&oldid=350738

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Graded core/shell semiconductor nanorods and nanorod barcodes  

DOE Patents (OSTI)

Graded core/shell semiconductor nanorods and shaped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

Alivisatos, A. Paul (Oakland, CA); Scher, Erik C. (San Francisco, CA); Manna, Liberato (Lecce, IT)

2010-12-14T23:59:59.000Z

262

Graded core/shell semiconductor nanorods and nanorod barcodes  

DOE Patents (OSTI)

Graded core/shell semiconductor nanorods and shapped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

2013-03-26T23:59:59.000Z

263

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents (OSTI)

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Urbana, IL); Lee, Keon Jae (Savoy, IL); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Champaign, IL); Zhu, Zhengtao (Urbana, IL)

2009-11-24T23:59:59.000Z

264

Guiding effect of quantum wells in semiconductor lasers  

Science Conference Proceedings (OSTI)

The guiding effect of InGaAs quantum wells in GaAs- and InP-based semiconductor lasers has been studied theoretically and experimentally. The results demonstrate that such waveguides can be effectively used in laser structures with a large refractive index difference between the quantum well material and semiconductor matrix and a large number of quantum wells (e.g. in InP-based structures). (semiconductor lasers. physics and technology)

Aleshkin, V Ya; Dikareva, Natalia V; Dubinov, A A; Zvonkov, B N; Karzanova, Maria V; Kudryavtsev, K E; Nekorkin, S M; Yablonskii, A N

2013-05-31T23:59:59.000Z

265

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents (OSTI)

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

2013-05-14T23:59:59.000Z

266

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents (OSTI)

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Durham, NC); Lee, Keon Jae (Daejeon, KR); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Raleigh, NC); Zhu, Zhengtao (Urbana, IL)

2011-07-19T23:59:59.000Z

267

July 28, 2010, Guiding semiconductor research through collaborative engagement  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

The SRC ... The SRC ... Guiding semiconductor research through collaborative engagement Elizabeth J. Weitzman Exec. VP, SRC Exec. Director, Focus Center Research Program Semiconductor Research Corporation 2 ... Awarded Nat'l Medal of Technology Presidential Citation: "For building the world's largest and most successful university research force to support the ... semiconductor industry; For proving the concept of collaborative research as the first high-tech research consortium; and For creating the concept and methodology that evolved into the International Technology Roadmap for Semiconductors." 3 Key Attributes of SRC Research Entities 1. Accepted IP model. SRC's model has been

268

Strain tuning of topological band order in cubic semiconductors  

SciTech Connect

We theoretically explore the possibility of tuning the topological order of cubic diamond/zinc-blende semi- conductors with external strain. Based on a simple tight-binding model, we analyze the evolution of the cubic semiconductor band structure under hydrostatic or biaxial lattice expansion, by which a generic guiding princi- ple is established that biaxial lattice expansion can induce a topological phase transition of small band-gap cubic semiconductors via a band inversion and symmetry breaking at point. Using density functional theory cal- culations, we demonstrate that a prototype topological trivial semiconductor, InSb, is converted to a nontrivial topological semiconductor with a 2% 3% biaxial lattice expansion.

Feng, wanxiang [Chinese Academy of Sciences; Zhu, Wenguang [University of Tennessee, Knoxville (UTK); Weitering, Hanno [University of Tennessee, Knoxville (UTK); Stocks, George Malcolm [ORNL; Yao, yugui [Chinese Academy of Sciences; Xiao, Di [ORNL

2012-01-01T23:59:59.000Z

269

Climate VISION: Private Sector Initiatives: Semiconductors: Resources and  

Office of Scientific and Technical Information (OSTI)

Technical Information Technical Information Download Acrobat Reader Modeling China's Semiconductor Industry Fluorinated Compound Emissions and Drafting a Roadmap for Climate Protection. (PDF 101 KB) 14th Annual International Semiconductor Environment Safety & Health (ISESH) Conference in Jeju, Korea (June 2007) presentation by Scott Bartos, U.S. EPA. Estimating the Impact of Migration to Asian Foundry Production on Attaining the WSC 2010 PFC Reduction Goal. (PDF 458 KB) 11th Annual ISESH Conference in Makuhari, Japan (July 2004) presentation by Scott Bartos, U.S. EPA. Guidelines for Environmental Characterization of Semiconductor Equipment (PDF 361 KB) This document provides guidelines for suppliers of semiconductor processing and abatement equipment to characterize their equipment to meet

270

II-V Compound Semiconductors - Microsystems Science, Technology...  

NLE Websites -- All DOE Office Websites (Extended Search)

researched, developed and delivered include: A wide variety of specialty semiconductor lasers Integrated VCSEL-RCPD circuits (vertical-cavity surface-emitting lasers,...

271

Metal Oxide Semiconductor Nanoparticles Pave the Way for ...  

Argonne researchers have developed a unique application of technology that involves using metal oxide semiconductor nanoparticles to target and control biological ...

272

Understanding How Semiconductors Absorb Light | U.S. DOE Office...  

Office of Science (SC) Website

Understanding How Semiconductors Absorb Light Basic Energy Sciences (BES) BES Home About Research Facilities Science Highlights Benefits of BES Funding Opportunities Basic Energy...

273

Resonator for Coherent Addition of Semiconductor Laser Arrays ...  

Resonator for Coherent Addition of Semiconductor Laser Arrays and Applications for a Solar Pumped Laser Array Oak Ridge National Laboratory. Contact ...

274

Production of 35S for a Liquid Semiconductor Betavoltaic  

DOE Green Energy (OSTI)

The specific energy density from radioactive decay is five to six orders of magnitude greater than the specific energy density in conventional chemical battery and fuel cell technologies. We are currently investigating the use of liquid semiconductor based betavoltaics as a way to directly convert the energy of radioactive decay into electrical power and potentially avoid the radiation damage that occurs in solid state semiconductor devices due to non-ionizing energy loss. Sulfur-35 was selected as the isotope for the liquid semiconductor demonstrations because it can be produced in high specific activity and it is chemically compatible with known liquid semiconductor media.

Meier, David E.; Garnov, A. Y.; Robertson, J. D.; Kwon, J. W.; Wacharasindhu, T.

2009-10-01T23:59:59.000Z

275

Argonne CNM News: HMapping Deformation in Buried Semiconductor...  

NLE Websites -- All DOE Office Websites (Extended Search)

CMOS performance. Nano-XRD allows for the first time in situ nanoscale mapping of lattice strain and tilt within a buried semiconductor layer at high spatial resolution...

276

Photophysics of Two-dimensional Semiconductor Nanoparticle/Liquid Interfaces  

Science Conference Proceedings (OSTI)

These studies have investigated the optical properties of two very different types of two-dimensional semiconductor nanoclusters and superlattices of these nanoclusters.

Kelley, David F.

2003-11-14T23:59:59.000Z

277

Method for depositing high-quality microcrystalline semiconductor materials  

SciTech Connect

A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

Guha, Subhendu (Bloomfield Hills, MI); Yang, Chi C. (Troy, MI); Yan, Baojie (Rochester Hills, MI)

2011-03-08T23:59:59.000Z

278

Wide Bandgap Semiconductors for Clean Energy Workshop: Summary...  

NLE Websites -- All DOE Office Websites (Extended Search)

Facilitator: Foundry service is from Defense Advanced Research Projects Agency (DARPA), Metal Oxide Semiconductor Implementation Service (MOSIS). There is an evaluation of...

279

Microsoft PowerPoint - ARM200803_DONG.ppt  

NLE Websites -- All DOE Office Websites (Extended Search)

pattern during the period 1998-2007 has a dipole pattern with Beaufort Sea High and Aleutian Low. The Beaufort Sea High blocks warmmoist Pacific air into Arctic region. 2. For...

280

Ma, Bonzongo, Gao, Dong and Gress QUARTERLY PROGRESS REPORT  

E-Print Network (OSTI)

nationwide; 2. Collaborated with Dr. Townsend on the sampling plan; 3. Contacted Crystal River, Seminole Crystal River (10 samples), Seminole Generating Station (6 samples) and Big bend plant (7 samples). 4

Ma, Lena

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Fully Integrated Complementary Metal Oxide Semiconductor (CMOS) Bio-Assay Platform  

E-Print Network (OSTI)

Oxide Semiconductor (CMOS) Bio-Assay Platform by OctavianOxide Semiconductor (CMOS) Bio-Assay Platform by OctavianOxide Semiconductor (CMOS) Bio-Assay Platform by Octavian

Florescu, Octavian

2010-01-01T23:59:59.000Z

282

Hydrogen local vibrational modes in semiconductors  

DOE Green Energy (OSTI)

Following, a review of experimental techniques, theory, and previous work, the results of local vibrational mode (LVM) spectroscopy on hydrogen-related complexes in several different semiconductors are discussed. Hydrogen is introduced either by annealing in a hydrogen ambient. exposure to a hydrogen plasma, or during growth. The hydrogen passivates donors and acceptors in semiconductors, forming neutral complexes. When deuterium is substituted for hydrogen. the frequency of the LVM decreases by approximately the square root of two. By varying the temperature and pressure of the samples, the microscopic structures of hydrogen-related complexes are determined. For group II acceptor-hydrogen complexes in GaAs, InP, and GaP, hydrogen binds to the host anion in a bond-centered orientation, along the [111] direction, adjacent to the acceptor. The temperature dependent shift of the LVMs are proportional to the lattice thermal energy U(T), a consequence of anharmonic coupling between the LVM and acoustical phonons. In the wide band gap semiconductor ZnSe, epilayers grown by metalorganic chemical vapor phase epitaxy (MOCVD) and doped with As form As-H complexes. The hydrogen assumes a bond-centered orientation, adjacent to a host Zn. In AlSb, the DX centers Se and Te are passivated by hydrogen. The second, third, and fourth harmonics of the wag modes are observed. Although the Se-D complex has only one stretch mode, the Se-H stretch mode splits into three peaks. The anomalous splitting is explained by a new interaction between the stretch LVM and multi-phonon modes of the lattice. As the temperature or pressure is varied, and anti-crossing is observed between LVM and phonon modes.

McCluskey, M.D. [Univ. of California, Berkeley, CA (United States). Dept. of Physics]|[Lawrence Berkeley National Lab., CA (United States)

1997-06-01T23:59:59.000Z

283

III-Nitride Semiconductors for Photovoltaic Applications  

DOE Green Energy (OSTI)

Using a band-structure method that includes bandgap correction, we study the chemical trends of the bandgap variation in III-V semiconductors and predict that the bandgap for InN is 0.85 0.1 eV. This result suggests that InN and its III-nitride alloys are suitable for photovoltaic applications. The unusually small bandgap for InN is explained in terms of the atomic energies and the bandgap deformation potentials. The electronic and structural properties of the nitrides and their alloys are also provided.

Wei, S. H.

2003-05-01T23:59:59.000Z

284

GaAs photoconductive semiconductor switch  

DOE Patents (OSTI)

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

1998-01-01T23:59:59.000Z

285

High power semiconductor laser diode arrays  

SciTech Connect

The cw optical power obtainable from semiconductor laser diodes has been extended to unprecedented levels in recent years through the use of multistripe arrays. By spreading out the optical power with more than 100 stripes, single-facet, cw output in exces of 5 Watts has been demonstrated, and 500 mW cw is now commercially available. Recent improvements to array performance include: arrays up to 1 cm wide that generates quasi-cw (150 usec pulse) output in excesss of 11 Watts, and a novel device structure which produces up to 215 mW cw in a single diffraction limited lobe.

Cross, P.S.

1986-08-15T23:59:59.000Z

286

Photocatalytic semiconductor clusters for fuel production  

DOE Green Energy (OSTI)

High quality crystalline, monodisperse nanometer-size semiconductor clusters were successfully grown using an inverse micellar synthesis process and their optical and structural properties were studied. Among the materials studied were PbS, FeS{sub 2}, MoS{sub 2}, CdS and related compounds. The results demonstrated strong electronic quantum confinement effects and broad tailorability of the bandgaps with decreasing cluster size, features that are important for the potential use of these materials as photocatalysts for solar fuel production and solar detoxification. The highlights of the work are included in an Executive Summary.

Wilcoxon, J.P.; Bliss, D.E.; Martin, J.E. [and others

1995-10-01T23:59:59.000Z

287

Electric-magnetic asymmetry of the A^2 condensate and the phases of Yang-Mills theory  

E-Print Network (OSTI)

We study the finite-temperature behavior of the A^2 condensate in the Landau gauge of SU(2) Yang--Mills theory on the lattice in a wide range of temperatures. The asymmetry between the electric (temporal) and magnetic (spatial) components of this unconventional dimension-2 condensate is a convenient ultraviolet-finite quantity which possesses, as we demonstrate, unexpected properties. The low-temperature behavior of the condensate asymmetry suggests that the mass of the lowest thermal excitation in the condensate is unexpectedly low, about 200 MeV, which is much smaller than the glueball mass. The asymmetry is peaking at the phase transition, becoming a monotonically decreasing function in the deconfinement phase. A symmetric point is reached in the deconfinement phase at a temperature approximately equal twice the critical temperature. The behavior of the electric-magnetic asymmetry of the condensate separates the phase diagram of Yang-Mills theory into three regions. We suggest that these regions are associated with the condensed, liquid and gaseous states of the confining gluonic objects, the Abelian monopoles.

M. N. Chernodub; E. -M. Ilgenfritz

2008-05-23T23:59:59.000Z

288

Interesting Electronic and Dynamic Properties of Quantum Dot Quantum Wells and other Semiconductor Nanocrystal Heterostructures .  

E-Print Network (OSTI)

??Some interesting electronic and dynamic properties of semiconductor nanocrystal heterostructures have been investigated using various spectroscopic methods. Semiconductor nanocrystal heterostructures were prepared using colloidal synthesis (more)

Schill, Alexander Wilhem

2006-01-01T23:59:59.000Z

289

Dilute magnetic semiconductors in spin-polarized electronics (invited)  

SciTech Connect

Dilute magnetic semiconductors have proven to be very useful in building an all-semiconductor platform for spintronics{emdash}so far they provide the only viable route to establish spin-polarized current injection into a nonmagnetic semiconductor. The reasons for this become apparent from a simple spin-channel model, which predicts that spin injection into a semiconductor can, within linear response, only readily be achieved from a ferromagnetic injector that has: (i) a resistivity that is comparable to the semiconductor and (ii) preferably is 100% spin polarized. Both of these criteria can be met in magnetic semiconductors, but (so far) are hard to achieve using other materials. Experimentally, we demonstrate how dilute magnetic II{endash}VI semiconductors can be used to inject a strongly (up to 90%) spin-polarized current into a light emitting diode. In addition, we discuss the implications of the spin-channel model for the observation of giant magnetoresistance-like effects in the magnetoresistance of an all-semiconductor device. {copyright} 2001 American Institute of Physics.

Schmidt, Georg; Molenkamp, Laurens W.

2001-06-01T23:59:59.000Z

290

Semiconductor device design using the BiMADS algorithm  

Science Conference Proceedings (OSTI)

Designing high-performance semiconductor devices is a complex optimization problem, which is characterized by multiple and, often, conflicting objectives. In this research work, we introduce a multi-objective optimization design approach based on the ... Keywords: Diodes, Drift-diffusion, Energy-transport, MESFETs, MOSFETs, Optimization, Semiconductors

Giovanni Stracquadanio, Vittorio Romano, Giuseppe Nicosia

2013-06-01T23:59:59.000Z

291

Study on Water-Cooled Solar Semiconductor Air Conditioner  

Science Conference Proceedings (OSTI)

Water-cooled solar semiconductor air conditioner was designed. Relevant calculation was made to determine the room's cooling load, which export the solar panels and battery capacity, followed by selection of CNC matcher. Development work also involves ... Keywords: solar energy, peltier effect, semiconductor air conditioner

Dong Zhi-Ming; Chang Ji-Bin; Xiang Li-Juan; Zhou Xue-Bin

2012-04-01T23:59:59.000Z

292

Visible-wavelength semiconductor lasers and arrays  

DOE Patents (OSTI)

The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

Schneider, R.P. Jr.; Crawford, M.H.

1996-09-17T23:59:59.000Z

293

Coated semiconductor devices for neutron detection  

DOE Green Energy (OSTI)

A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and electrical settings, neutrons at specific energies can be detected. The coated neutron detector is capable of performing real-time neutron radiography in high gamma fields, digital fast neutron radiography, fissile material identification, and basic neutron detection particularly in high radiation fields.

Klann, Raymond T. (Bolingbrook, IL); McGregor, Douglas S. (Whitmore Lake, MI)

2002-01-01T23:59:59.000Z

294

Distributed Quantum Computation Architecture Using Semiconductor Nanophotonics  

E-Print Network (OSTI)

In a large-scale quantum computer, the cost of communications will dominate the performance and resource requirements, place many severe demands on the technology, and constrain the architecture. Unfortunately, fault-tolerant computers based entirely on photons with probabilistic gates, though equipped with "built-in" communication, have very large resource overheads; likewise, computers with reliable probabilistic gates between photons or quantum memories may lack sufficient communication resources in the presence of realistic optical losses. Here, we consider a compromise architecture, in which semiconductor spin qubits are coupled by bright laser pulses through nanophotonic waveguides and cavities using a combination of frequent probabilistic and sparse determinstic entanglement mechanisms. The large photonic resource requirements incurred by the use of probabilistic gates for quantum communication are mitigated in part by the potential high-speed operation of the semiconductor nanophotonic hardware. The system employs topological cluster-state quantum error correction for achieving fault-tolerance. Our results suggest that such an architecture/technology combination has the potential to scale to a system capable of attacking classically intractable computational problems.

Rodney Van Meter; Thaddeus D. Ladd; Austin G. Fowler; Yoshihisa Yamamoto

2009-06-15T23:59:59.000Z

295

Photonic switching devices based on semiconductor nanostructures  

E-Print Network (OSTI)

Squeezing and guiding light into semiconductor nanostructures delivers revolutionary concepts of photonic devices, which may offer a practical pathway towards power-efficient optical networks. In this review, we consider photonic switches using semiconductor quantum dots (QDs) and photonic cavities. By intuitively introducing in a field enhancement factor, the optical nonlinearity of nano-photonic switches can be understood and this has shown their unique features to dramatically improve the power-density/speed limitation that has lain in conventional photonic switches for decades. In addition, the power consumption has been reduced due to the atom-like characterization of QDs as well as the nano-size footprint of photonic cavities. Based on this theoretical perspective, the current progress of QD/cavity switches is reviewed in terms of various optical nonlinearities which have been employed to demonstrate photonic switching at the nanoscale. Emerging functionalities enabled by cavity nonlinear effects such as the wavelength tuning and Purcell-factor tuning have been further introduced.

Chao-Yuan Jin; Osamu Wada

2013-08-11T23:59:59.000Z

296

High-Throughput Transfer Imprinting for Organic Semiconductors  

E-Print Network (OSTI)

Development of nanoimprint lithography(NIL) has enabled high-throughput and high-resolution patterning over the optical limitation. In recent years, thermal nanoimprint has been used to directly pattern functional materials such as organic semiconductors because heat and pressure used in thermal nanoimprint do not damage functional materials. However, issues such as residual layer removal and mold contamination still limit the application of nanoimprint for organic semiconductor patterning. In this work, nanoimprint-based transfer imprinting of organic semiconductor is studied. In the same time the suggested technique is simulated with COMSOL multi-physics simulator to understand its mechanism. This transfer printing technique utilize thermal nanoimprint scheme to enable residual-layer-free patterning of organic semiconductors without mold contamination. The transfer imprinting technique is amenable to roll-to-roll process for high-throughput patterning of organic semiconductors for low-cost organic electronic applications.

Choo, Gihoon

2013-08-01T23:59:59.000Z

297

Hierarchical Disaster Image Classification for Situation Report Enhancement Yimin Yang, Hsin-Yu Ha, Fausto Fleites, Shu-Ching Chen, Steven Luis  

E-Print Network (OSTI)

response situations. The HDIC framework classifies images into different disaster categories and subHierarchical Disaster Image Classification for Situation Report Enhancement Yimin Yang, Hsin-Yu Ha In this paper, a hierarchical disaster image classification (HDIC) framework based on multi-source data fusion

Chen, Shu-Ching

298

Ion Trap in a Semiconductor Chip  

E-Print Network (OSTI)

The electromagnetic manipulation of isolated atoms has led to many advances in physics, from laser cooling and Bose-Einstein condensation of cold gases to the precise quantum control of individual atomic ion. Work on miniaturizing electromagnetic traps to the micrometer scale promises even higher levels of control and reliability. Compared with 'chip traps' for confining neutral atoms, ion traps with similar dimensions and power dissipation offer much higher confinement forces and allow unparalleled control at the single-atom level. Moreover, ion microtraps are of great interest in the development of miniature mass spectrometer arrays, compact atomic clocks, and most notably, large scale quantum information processors. Here we report the operation of a micrometer-scale ion trap, fabricated on a monolithic chip using semiconductor micro-electromechanical systems (MEMS) technology. We confine, laser cool, and measure heating of a single 111Cd+ ion in an integrated radiofrequency trap etched from a doped gallium arsenide (GaAs) heterostructure.

D. Stick; W. K. Hensinger; S. Olmschenk; M. J. Madsen; K. Schwab; C. Monroe

2006-01-09T23:59:59.000Z

299

Elements of Doping Engineering in Semiconductors  

DOE Green Energy (OSTI)

Using defect thermodynamics, we discuss physical factors that affect doping limits in semiconductors. The dependencies of the defect formation enthalpy on the atomic chemical potentials and on the electron Fermi energy are demonstrated. These dependencies, in particular on the Fermi energy, lead to spontaneous formation of charge-compensating defects that can limit doping. Experimental data compiled for III-V, II-VI, and I-III-VI2 compounds support this view and further provide insight into the connections among different host materials. We argue that what matters is not the magnitude of the band gap that determines the dopability of a material, but rather, the relative position of the conduction-band minimum (in the case of n-doping) and the valence-band maximum (in the case of p-doping) with respect to vacuum.

Zhang, S. B.; Wei, S.; Zunger, A.

1998-11-09T23:59:59.000Z

300

Internal cooling in a semiconductor laser diode  

E-Print Network (OSTI)

AbstractA thermal model of a diode laser structure is developed which includes a bipolar thermoelectric term not included in previous models. It is shown that heterostructure band offsets can be chosen so that there are thermoelectric cooling sources near the active region; this method of cooling is internal to the device itself, as opposed to temperature stabilization schemes which employ an external cooler. A novel laser structure is proposed that is capable of internal cooling in the Ga1 In As Sb1 GaSb material system with = 2 64 m. Index TermsElectrothermal effects, lasers, laser thermal factors, photothermal effects, semiconductor lasers, thermionic emission, thermionic energy conversion, thermoelectric devices, thermoelectric energy conversion, thermoelectricity. Fig. 1. Band structure and thermoelectric heat source distribution for (a) and (b) conventional SCH, and (c) and (d) ICICLE.

K. P. Pipe; R. J. Ram; A. Shakouri

1995-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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301

Exciton binding energy in semiconductor quantum dots  

Science Conference Proceedings (OSTI)

In the adiabatic approximation in the context of the modified effective mass approach, in which the reduced exciton effective mass {mu} = {mu}(a) is a function of the radius a of the semiconductor quantum dot, an expression for the exciton binding energy E{sub ex}(a) in the quantum dot is derived. It is found that, in the CdSe and CdS quantum dots with the radii a comparable to the Bohr exciton radii a{sub ex}, the exciton binding energy E{sub ex}(a) is substantially (respectively, 7.4 and 4.5 times) higher than the exciton binding energy in the CdSe and CdS single crystals.

Pokutnii, S. I., E-mail: Pokutnyi_Sergey@inbox.ru [National Academy of Sciences of Ukraine, G.V. Kurdjumov Institute for Metal Physics (Ukraine)

2010-04-15T23:59:59.000Z

302

Hybrid Semiconductors for Hardier Electronics and Optoelectronics? |  

NLE Websites -- All DOE Office Websites (Extended Search)

Unveiling the Molecular Structure of the Target of Many Drugs Unveiling the Molecular Structure of the Target of Many Drugs A New Scenario for First Life on Earth Surface Orbital 'Roughness' in Colossal Magnetoresistive Oxide Different Roads Toward Quantum Criticality Orbital Reconstruction at a Complex Oxide Interface Science Highlights Archives: 2013 | 2012 | 2011 | 2010 2009 | 2008 | 2007 | 2006 2005 | 2004 | 2003 | 2002 2001 | 2000 | 1998 | Subscribe to APS Science Highlights rss feed Hybrid Semiconductors for Hardier Electronics and Optoelectronics? DECEMBER 21, 2007 Bookmark and Share The crystal structure of β-ZnTe(en)0:5, determined by single-crystal x-ray diffraction. Two-monolayerthick ZnTe slabs are interconnected by ethylenediamine (C2N2H8) molecules bonded to zinc atoms. Zn-Green, Te-Red, N-Blue,and C-Gray. Hydrogen atoms are omitted for clarity.

303

Chern-Simons Theory on S^1-Bundles: Abelianisation and q-deformed Yang-Mills Theory  

E-Print Network (OSTI)

We study Chern-Simons theory on 3-manifolds $M$ that are circle-bundles over 2-dimensional surfaces $\\Sigma$ and show that the method of Abelianisation, previously employed for trivial bundles $\\Sigma \\times S^1$, can be adapted to this case. This reduces the non-Abelian theory on $M$ to a 2-dimensional Abelian theory on $\\Sigma$ which we identify with q-deformed Yang-Mills theory, as anticipated by Vafa et al. We compare and contrast our results with those obtained by Beasley and Witten using the method of non-Abelian localisation, and determine the surgery and framing presecription implicit in this path integral evaluation. We also comment on the extension of these methods to BF theory and other generalisations.

Matthias Blau; George Thompson

2006-01-11T23:59:59.000Z

304

Natural Emergence of Cosmological Constant and Dark Radiation from Stephenson-Kilmister-Yang-Camenzind Theory of Gravity  

E-Print Network (OSTI)

We show that the Stephenson-Kilmister-Yang (SKY) equation combined with Camenzind's matter current term naturally provides the cosmological constant and dark radiation as integration constants of the SKYC field equation. To characterize the property of the dark radiation, we develop a method to separate it from the ordinary radiation. We found a special property of Camenzind's matter current, namely that the solution space for radiation in fact belongs to that of the vacuum solution of SKY equation. We also found that his matter current does not obey the conservation condition suggested by Kilmister. Finally, we discuss the possible role of dark radiation emergent from the SKYC theory in recent cosmic-microwave-background observations and its implications to the inflation scenario.

Chen, Pisin; Tung, Nien-En

2013-01-01T23:59:59.000Z

305

Gauge invariant method for maximum simplification of the field strength in non-Abelian Yang-Mills theories  

E-Print Network (OSTI)

A new local gauge invariant method is introduced in order to maximally simplify the expression for a SU(2) non-Abelian field strength. The new tetrads introduced in previous works are going to play a fundamental role in the algorithm presented in this manuscript. Three new local gauge invariant objects are going to guide us through the process of making a field strength block diagonal. The process is also covariant. Any non-trivial isospace field strength projection will become block diagonal through this algorithm. Along with the local gauge invariant method already developed in order to diagonalize the stress-energy tensor, we have with this new local gauge invariant method to maximally simplify the field strength, a new gauge invariant method to classify Yang-Mills field theories.

Alcides Garat

2013-06-10T23:59:59.000Z

306

Dyon Solution in Einstein-Yang-Mills Theory on a Cylindrical Symmetric Space Time with Cosmological Constant  

E-Print Network (OSTI)

We investigated numerically dyon-like solutions of the SU(2) Einstein-Yang-Mills system on a cylindrically symmetric space time with a cosmological constant. We find a new kind of behaviour not found in the spherically symmetric models. For positive values of $\\Lambda$ we have an oscillatory behaviour of the magnetic component of the YM field around the r-axis, so there is an arbitrary number of nodes. For increasing positive $\\Lambda$, the frequency increases also and the solution breaks down at finite radius, indicating a singularity. The electric component, however, approaches a constant value. After further increasing $\\Lambda$, this global behaviour repeats itself at a larger r while the former singular behaviour disappears. For increasing negative $\\Lambda$, the oscillatory behaviour disappears and the magnetic and electric components behave like the scalar and gauge field in the Abelian cosmic string model.

Reinoud J. Slagter

2004-05-22T23:59:59.000Z

307

Spin Splitting and Spin Current in Strained Bulk Semiconductors  

SciTech Connect

We present a theory for two recent experiments in bulk strained semiconductors and show that a new, previously overlooked, strain spin-orbit coupling term may play a fundamental role. We propose simple experiments that could clarify the origin of strain-induced spin-orbit coupling terms in inversion asymmetric semiconductors. We predict that a uniform magnetization parallel to the electric field will be induced in the samples studied in for specific directions of the applied electric field. We also propose special geometries to detect spin currents in strained semiconductors.

Bernevig, B.Andrei; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

2010-01-15T23:59:59.000Z

308

Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process  

DOE Patents (OSTI)

A process for the formation of shaped Group II-VI semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

Alivisatos, A. Paul (Oakland, CA); Peng, Xiaogang (Fayetteville, AR); Manna, Liberato (Palo del Colle, IT)

2001-01-01T23:59:59.000Z

309

Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process  

DOE Patents (OSTI)

A process for the formation of shaped Group III-V semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

Alivisatos, A. Paul (Oakland, CA); Peng, Xiaogang (Fayetteville, AR); Manna, Liberato (Palo del Colle, IT)

2001-01-01T23:59:59.000Z

310

Exploring and enhancing conductivity in semiconductor nanoparticle films  

E-Print Network (OSTI)

Semiconductor nanocrystals (NCs) are a promising material for use in opto-electronic devices as their optical properties tune with particle size. NCs formed via colloidal synthesis are suspended in solution by the organic ...

Porter, Venda Jane

2007-01-01T23:59:59.000Z

311

Semiconductor nanocrystals : synthesis, mechanisms of formation, and applications in biology  

E-Print Network (OSTI)

The primary focus of this thesis is the synthesis and applications of semiconductor nanocrystals, or quantum dots (QDs). Novel synthetic routes to ternary 1-III-VI QDs are presented, and we report the first highly luminescent ...

Allen, Peter M. (Peter Matthew)

2010-01-01T23:59:59.000Z

312

AlGaN/GaN-based power semiconductor switches  

E-Print Network (OSTI)

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

313

Spin polarized transport effects in III-V semiconductor heterostructures  

Science Conference Proceedings (OSTI)

In the field of spintronics, GaMnAs, a ferromagnetic semiconductor, offers many advantages to study tunnel magnetotransport properties when used as an electrode. The complexity of the transport mechanisms associated with spin orbit coupled states make ...

J.-M. George

2005-07-01T23:59:59.000Z

314

Varian Semiconductor Equipment Associates Inc VSEA | Open Energy  

Open Energy Info (EERE)

Varian Semiconductor Equipment Associates Inc VSEA Varian Semiconductor Equipment Associates Inc VSEA Jump to: navigation, search Name Varian Semiconductor Equipment Associates Inc (VSEA) Place Gloucester, Massachusetts Zip 1930 Sector Services Product Massachusetts-based, designs, manufactures, and services semiconductor processing equipment used in the fabrication of integrated circuits. Coordinates 37.413962°, -76.526305° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.413962,"lon":-76.526305,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

315

Ramgraber Semiconductor Equipment GmbH | Open Energy Information  

Open Energy Info (EERE)

Ramgraber Semiconductor Equipment GmbH Ramgraber Semiconductor Equipment GmbH Jump to: navigation, search Name Ramgraber Semiconductor Equipment GmbH Place Brunnthal, Germany Zip 85649 Sector Solar Product Makes semiconductor processing equipment, including solar cell manufacturing lines. Coordinates 48.006898°, 11.684687° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":48.006898,"lon":11.684687,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

316

Argonne licenses diamond semiconductor discoveries to AKHAN Technologies |  

NLE Websites -- All DOE Office Websites (Extended Search)

licenses diamond semiconductor discoveries to AKHAN Technologies licenses diamond semiconductor discoveries to AKHAN Technologies By Joseph Bernstein * By Jared Sagoff * March 4, 2013 Tweet EmailPrint LEMONT, Ill. - The U.S. Department of Energy's Argonne National Laboratory announced today that the laboratory has granted AKHAN Technologies exclusive diamond semiconductor application licensing rights to breakthrough low-temperature diamond deposition technology developed by Argonne's Center for Nanoscale Materials (CNM). The Argonne-developed technology allows for the deposition of nanocrystalline diamond on a variety of wafer substrate materials at temperatures as low as 400 degrees Celsius. The combination of the Argonne's low-temperature diamond technology with AKHAN's Miraj Diamond(tm) process represents the state of the art in diamond semiconductor

317

Ultrafast nonlinear optical properties of passive and active semiconductor devices  

E-Print Network (OSTI)

Nonlinear optical properties and ultrafast carrier dynamics of slab-coupled optical waveguide amplifiers, silicon nanowaveguides, and III-V semiconductor saturable Bragg reflectors are studied. The limits imposed by two ...

Motamedi, Ali Reza

2011-01-01T23:59:59.000Z

318

Improving reuse of semiconductor equipment through benchmarking, standardization, and automation  

E-Print Network (OSTI)

The 6D program at Intel Corporation was set up to improve operations around capital equipment reuse, primarily in their semiconductor manufacturing facilities. The company was faced with a number of challenges, including ...

Silber, Jacob B. (Jacob Bradley)

2006-01-01T23:59:59.000Z

319

Business Case Slide 26: High-Value: Semiconductors - Description...  

NLE Websites -- All DOE Office Websites (Extended Search)

(cont.) Previous Slide Next Slide Table of Contents High-Value: Semiconductors - Description (cont.) Measuring the photo-voltaic properties of a DUO2 diode at NREL Measuring the...

320

Characterization of Novel Semiconductor Alloys for Band Gap Engineering  

E-Print Network (OSTI)

parameter for the lower-energy matrix like band. The fullthe optical matrix is constant with energy and given by: 2 menergy of the host semiconductor. Diagalization of the matrix

Broesler, Robert Joseph

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

A New Earth-Abundant Semiconductor for Solar Energy Conversion  

Science Conference Proceedings (OSTI)

Presentation Title, G2, ZnSnN2: A New Earth-Abundant Semiconductor for Solar Energy Conversion. Author(s), Lise Lahourcade, Naomi C Coronel, Harry A...

322

A thermovoltaic semiconductor device including a plasma filter  

DOE Patents (OSTI)

A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential are disclosed. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

Baldasaro, Paul F.

1997-12-01T23:59:59.000Z

323

Conductive layer for biaxially oriented semiconductor film growth  

DOE Patents (OSTI)

A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.

Findikoglu, Alp T. (Los Alamos, NM); Matias, Vladimir (Santa Fe, NM)

2007-10-30T23:59:59.000Z

324

Printable semiconductor structures and related methods of making and assembling  

DOE Patents (OSTI)

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Durham, NC); Lee, Keon Jae (Tokyo, JP); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Westmont, IL); Meitl, Matthew (Raleigh, NC); Zhu, Zhengtao (Rapid City, SD); Ko, Heung Cho (Urbana, IL); Mack, Shawn (Goleta, CA)

2011-10-18T23:59:59.000Z

325

Printable semiconductor structures and related methods of making and assembling  

DOE Patents (OSTI)

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Urbana, IL); Lee, Keon Jae (Tokyo, JP); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Westmont, IL); Meitl, Matthew (Champaign, IL); Zhu, Zhengtao (Rapid City, SD); Ko, Heung Cho (Urbana, IL); Mack, Shawn (Goleta, CA)

2010-09-21T23:59:59.000Z

326

Printable semiconductor structures and related methods of making and assembling  

DOE Patents (OSTI)

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang; , Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

2013-03-12T23:59:59.000Z

327

Colloidal crystal formation in a semiconductor quantum plasma  

Science Conference Proceedings (OSTI)

The static shielding and the far-field dynamical oscillatory wake potentials in an ion-implanted piezoelectric semiconductor with colloid ions as test particles have been investigated in detail. The dielectric response function of the semiconductor is contributed by the quantum effect of electrons through the Bohm potential and lattice electron-phonon coupling effects. It is found that the quantum effect causes tighter binding of the electrons reducing the quantum Debye shielding length and the effective length of the wake potential to several angstroms. Hence, a quasiquantum lattice of colloid ions can be formed in the semiconductor in the quantum scales giving rise to drastic modifications of the ion-implanted semiconductor properties.

Zeba, I.; Uzma, Ch.; Jamil, M.; Salimullah, M. [Department of Physics, GC University, 54000 Lahore (Pakistan); Shukla, P. K. [Theoretische Physik IV, Ruhr-Universitaet Bochum, D-44780 Bochum (Germany)

2010-03-15T23:59:59.000Z

328

Electroluminescence in ion gel gated organic polymer semiconductor transistors  

E-Print Network (OSTI)

emission in ion gel gated, thin film organic semiconductor tran- sistors and investigates the light emission mechanism behind these devices. We report that ion gel gated organic polymer semiconductor transistors emit light when the drain source volt- age... the organic light emitting devices become mainstream, there are several challenges that need to be resolved and current research focus is to ad- dress those challenges. One particular challenge is relatively high operating volt- ages of light emitting organic...

Bhat, Shrivalli

2011-07-12T23:59:59.000Z

329

Gas fixation solar cell using gas diffusion semiconductor electrode  

SciTech Connect

A gas diffusion semiconductor electrode and solar cell and a process for gaseous fixation, such as nitrogen photoreduction, CO/sub 2/ photoreduction and fuel gas photo-oxidation are described. The gas diffusion photosensitive electrode has a central electrolyte porous matrix with an activated semiconductor material on one side adapted to be in contact with an electrolyte and a hydrophobic gas diffusion region on the opposite side adapted to be in contact with a supply of molecular gas.

Ang, P.G.; Sammells, A.F.

1980-12-23T23:59:59.000Z

330

Thermally robust semiconductor optical amplifiers and laser diodes  

DOE Patents (OSTI)

A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

Dijaili, Sol P. (Moraga, CA); Patterson, Frank G. (Danville, CA); Walker, Jeffrey D. (El Cerrito, CA); Deri, Robert J. (Pleasanton, CA); Petersen, Holly (Manteca, CA); Goward, William (Antioch, CA)

2002-01-01T23:59:59.000Z

331

Fatty Acids in Health Promotion and Disease CausationChapter 26 The Opposing Effects of Dietary Omega-3 and trans Fatty Acids on Health: A Yin-Yang Effect at the Molecular Level?  

Science Conference Proceedings (OSTI)

Fatty Acids in Health Promotion and Disease Causation Chapter 26 The Opposing Effects of Dietary Omega-3 and trans Fatty Acids on Health: A Yin-Yang Effect at the Molecular Level? Health Nutrition Biochemistry eChapters Health - Nutritio

332

Electron transfer at sensitized semiconductor electrodes  

DOE Green Energy (OSTI)

Electron transfer from the excited state of sensitizing dyes to the conduction band of semiconductors has been studied through photoelectrochemical techniques. Two systems were analyzed in detail: rhodamine B on ZnO and rose bengal on TiO/sub 2/. Prior to electrochemical experimentation, the adsorption characteristics of these dyes were investigated using ZnO, ZnS, and TiO/sub 2/ single crystals as substrates. Absorbance measurements of the adsorbed dye were taken as a function of the solution concentration of the dye. Adsorption isotherms heats of adsorption were also established; they were similar to literature data reported for adsorption of these dyes on powdered substrates. Using the absorbance data, the quantum efficiency for photoinjection of electrons from rhodamine B into a ZnO electrode was determined to be 2.7 x 10/sup -2/. This value was independent of the dye surface concentration down to 50% coverage of the electrode. With the assumption that not all of the rhodamine B adsorbed on the electrode has the same rate of electron injection, a kinetic model for the time decay of the photocurrent was developed; data were analyzed according to this theory. A rate constant for photoreduction of the adsorbed dye was determined for the reducing agents. 86 references.

Spitler, M.T.

1977-03-01T23:59:59.000Z

333

Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes  

SciTech Connect

A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) an affinity molecule linked to the semiconductor nanocrystal. The semiconductor nanocrystal is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Exposure of the semiconductor nanocrystal to excitation energy will excite the semiconductor nanocrystal causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

Weiss, Shimon (Pinole, CA); Bruchez, Jr., Marcel (Albany, CA); Alivisatos, Paul (Oakland, CA)

2008-01-01T23:59:59.000Z

334

Scattering below critical energy for the radial 4D Yang-Mills equation and for the 2D corotational wave map system  

E-Print Network (OSTI)

We describe the asymptotic behavior as time goes to infinity of solutions of the 2 dimensional corotational wave map system and of solutions to the 4 dimensional, radially symmetric Yang-Mills equation, in the critical energy space, with data of energy smaller than or equal to a harmonic map of minimal energy. An alternative holds: either the data is the harmonic map and the soltuion is constant in time, or the solution scatters in infinite time.

Cote, Raphael; Merle, Frank

2007-01-01T23:59:59.000Z

335

Optical Properties and Potential Applications of Doped Semiconductor Nanoparticles  

SciTech Connect

Recent studies on the optical properties, in particular luminescence, of a variety of doped semiconductor nanoparticles are reviewed. The effects of quantum confinement, temperature, and pressure on luminescent properties are discussed. In addition, electroluminescence, cathodoluminescence, magnetoluminescence and related applications involving doped semiconductor nanoparticles are presented. A new phenomenon, upconversion luminescence of doped nanoparticles, is reviewed and its potential applications are discussed. While more research efforts are necessary in order to fully understand the fundamentals and explore the great technological potential behind doped nanoparticles, recent results already show that this is a new and exciting field with applications in many fields. In particular, the emerging field of ''spintronics'', where spin states are exploited in analogy to conventional electronic states, is discussed and the advantages of using doped semiconductor nanoparticles are elucidated.

Chen, Wei; Zhang, Jin Z.; Joly, Alan G.

2004-11-08T23:59:59.000Z

336

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents (OSTI)

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

337

Efficient semiconductor light-emitting device and method  

DOE Patents (OSTI)

A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

Choquette, Kent D. (Albuquerque, NM); Lear, Kevin L. (Albuquerque, NM); Schneider, Jr., Richard P. (Albuquerque, NM)

1996-01-01T23:59:59.000Z

338

Efficient semiconductor light-emitting device and method  

DOE Patents (OSTI)

A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

Choquette, K.D.; Lear, K.L.; Schneider, R.P. Jr.

1996-02-20T23:59:59.000Z

339

Wavelength-resonant surface-emitting semiconductor laser  

DOE Patents (OSTI)

A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

Brueck, Steven R. J. (Albuquerque, NM); Schaus, Christian F. (Albuquerque, NM); Osinski, Marek A. (Albuquerque, NM); McInerney, John G. (Cedar Crest, NM); Raja, M. Yasin A. (Albuquerque, NM); Brennan, Thomas M. (Albuquerque, NM); Hammons, Burrell E. (Tijeras, NM)

1989-01-01T23:59:59.000Z

340

OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES  

Science Conference Proceedings (OSTI)

This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

Grant, C D; Zhang, J Z

2007-09-28T23:59:59.000Z

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Below-bandgap excitation of bulk semiconductors by twisted light  

E-Print Network (OSTI)

I theoretically investigate the response of bulk semiconductors to excitation by twisted light below the energy bandgap. To this end, I modify a well-known model of light-semiconductor interaction to account for the conservation of the light's momentum. I show that the excited states can be thought of as a superposition of slightly perturbed exciton states undergoing a complex center-of-mass motion. In addition, the absorption would occur at a slightly shifted energy (compared to plane waves) and would exhibit complex spatial patterns in the polarization and current.

Quinteiro, G F

2013-01-01T23:59:59.000Z

342

Toward a Unified Treatment of Electronic Processes in Organic Semiconductors  

DOE Green Energy (OSTI)

A quantitative study of n-type doping in highly crystalline organic semiconductor films establishes the predominant influence of electrostatic forces in these low-dielectric materials. Based on these findings, a self-consistent model of doped (purposely or not) organic semiconductors is proposed in which: (1) the equilibrium free carrier density, nf, is a small fraction of the total charge density; (2) a superlinear increase in conductivity with doping density is universal; (3) nf increases with applied electric field; and (4) the carrier mobility is field-dependent regardless of crystallinity.

Gregg. B.A.

2005-01-01T23:59:59.000Z

343

Low temperature production of large-grain polycrystalline semiconductors  

SciTech Connect

An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

Naseem, Hameed A. (Fayetteville, AR); Albarghouti, Marwan (Loudonville, NY)

2007-04-10T23:59:59.000Z

344

System design and simulation of constant temperature box using semiconductor refrigeration device  

Science Conference Proceedings (OSTI)

This paper presents the variation law of temperature in three-dimensional space, which is cooled by the refrigeration provided by the cold side of a semiconductor. The mathematical model of the temperature field of the semiconductor refrigeration ... Keywords: constant temperature box, forced convection, mathematical modelling, numerical simulation, semiconductor refrigeration, system design

Hui Zhang; Kuang-Chao Fan; Jun Wang

2010-03-01T23:59:59.000Z

345

Electronic displays using optically pumped luminescent semiconductor nanocrystals  

DOE Patents (OSTI)

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Weiss, Shimon (Pinole, CA); Schlamp, Michael C. (Plainsboro, NJ); Alivisatos, A. Paul (Oakland, CA)

2011-09-27T23:59:59.000Z

346

Generator of pumping pulses for powerful semiconductor lasers  

Science Conference Proceedings (OSTI)

The generator of electric and optic pulses are built using powerful MOS transistors and an ILPI-103 semiconductor laser generates pumping pulses with an amplitude of 15 A and optic pulses with a duration of 9 to 30 nsec at a repetition rate of up to 90 kHz. The output signal is TTL. The device is designed for open optic communication lines.

An, V.I.; Kolesnikov, Yu.Yu. [Voronezh Scientific Research Institute of Communications, Voronezh (Russian Federation)

1995-06-01T23:59:59.000Z

347

Method of depositing wide bandgap amorphous semiconductor materials  

DOE Patents (OSTI)

A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200.degree. C. and a pressure in the range from about 1-50 Torr.

Ellis, Jr., Frank B. (Princeton Junction, NJ); Delahoy, Alan E. (Rocky Hill, NJ)

1987-09-29T23:59:59.000Z

348

Chemosensors, biosensors, and microsystems based on standard semiconductor technology (CMOS)  

Science Conference Proceedings (OSTI)

Microfabrication techniques and, in particular, complementary metal oxide semiconductor (CMOS) technology have been used to devise chemosensors, biosensors, and microsystems in a generic approach. Examples of micromachined bio/chemosensors, such as cantilevers ... Keywords: CMOS, bioelectronics, biomicrosystem, biosensor, cells, chemical sensor, microelectronics

Andreas Hierlemann

2007-02-01T23:59:59.000Z

349

[Electron transfer rates at semiconductor/liquid interfaces]. Progress report  

DOE Green Energy (OSTI)

Work has focused on several aspects of the fundamental chemistry and physics semiconductor/liquid junction behavior. These projects have been directed primarily towards GaAs/liquid contacts, because GaAs/liquid systems provide high energy conversion efficiencies and offer an opportunity to gain mechanistic understanding of the factors that are important to control in an efficient photoelectrochemical energy conversion system.

Lewis, N.S.

1992-08-01T23:59:59.000Z

350

(Electron transfer rates at semiconductor/liquid interfaces)  

DOE Green Energy (OSTI)

Work has focused on several aspects of the fundamental chemistry and physics semiconductor/liquid junction behavior. These projects have been directed primarily towards GaAs/liquid contacts, because GaAs/liquid systems provide high energy conversion efficiencies and offer an opportunity to gain mechanistic understanding of the factors that are important to control in an efficient photoelectrochemical energy conversion system.

Lewis, N.S.

1992-01-01T23:59:59.000Z

351

Quantum Optics: Colloidal Fluorescent Semiconductor Nanocrystals (Quantum Dots)  

E-Print Network (OSTI)

U ncorrected Proof Chapter 3 Quantum Optics: Colloidal Fluorescent Semiconductor Nanocrystals (Quantum Dots) in Single-Molecule Detection and Imaging Laurent A. Bentolila, Xavier Michalet, and Shimon quantum dots (QDs), have emerged as new powerful fluorescent probes for in vitro and in vivo biological

Michalet, Xavier

352

User experience research in the semiconductor factory: a contradiction?  

Science Conference Proceedings (OSTI)

No doubt, user experience (UX) has become of high relevance within the HCI community. Within this paper, we present initial results from a qualitative study on UX in the factory context, more precisely in a semiconductor factory. We highlight the challenges ... Keywords: factory context, probing, user experience, user study

Marianna Obrist; Wolfgang Reitberger; Daniela Wurhofer; Florian Frster; Manfred Tscheligi

2011-09-01T23:59:59.000Z

353

The new -NMR facility at TRIUMF and applications in semiconductors  

E-Print Network (OSTI)

The new -NMR facility at TRIUMF and applications in semiconductors K.H. Chow a, Z. Salman b R facililty for conducting beta-detected nuclear magnetic resonance (-NMR) investigations of condensed matter facility are described, and some preliminary results on 8Li+ in GaAs are presented. Key words: -NMR

Baartman, Richard Abram

354

Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes  

SciTech Connect

A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

Weiss, Shimon (Pinole, CA); Bruchez, Jr., Marcel (Albany, CA); Alivisatos, Paul (Oakland, CA)

2004-03-02T23:59:59.000Z

355

Semiconductor nanocrystal probes for biological applications and process for making and using such probes  

DOE Patents (OSTI)

A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

Weiss, Shimon (Pinole, CA); Bruchez, Marcel (Newark, CA); Alivisatos, Paul (Oakland, CA)

2011-12-06T23:59:59.000Z

356

Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes  

DOE Patents (OSTI)

A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in he probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

Weiss, Shimon (Pinole, CA); Bruchez, Jr., Marcel (Albany, CA); Alivisatos, Paul (Oakland, CA)

2002-01-01T23:59:59.000Z

357

Semiconductor nanocrystal probes for biological applications and process for making and using such probes  

SciTech Connect

A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

2012-10-16T23:59:59.000Z

358

Methods of use of semiconductor nanocrystal probes for treating a material  

Science Conference Proceedings (OSTI)

A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

Weiss, Shimon (Los Angeles, CA); Bruchez, Marcel (Belmont, CA); Alivisatos, Paul (Oakland, CA)

2007-04-27T23:59:59.000Z

359

Semiconductor nanocrystal probes for biological applications and process for making and using such probes  

SciTech Connect

A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

Weiss, Shimon (Pinole, CA); Bruchez, Marcel (Newark, CA); Alivisatos, Paul (Oakland, CA)

2011-12-20T23:59:59.000Z

360

Design scoping study of the 12T Yin-Yang magnet system for the Tandem Mirror Next Step (TMNS). Final report  

Science Conference Proceedings (OSTI)

The overall objective of this engineering study was to determine the feasibility of designing a Yin-Yang magnet capable of producing a peak field in the windings of 12T for the Tandem Mirror Next Step (TMNS) program. As part of this technical study, a rough order of magnitude (ROM) cost estimate of the winding for this magnet was undertaken. The preferred approach to the winding design of the TMNS plug coil utilizes innovative design concepts to meet the structural, electrical and thermodynamic requirements of the magnet system. Structurally, the coil is radially partitioned into four sections, preventing the accumulation of the radial loads and reacting them into the structural case. To safely dissipate the 13.34 GJ of energy stored in each Yin-Yang magnet, the winding has been electrically subdivided into parallel or nested coils, each having its own power supply and protection circuitry. This arrangement effectively divides the total stored energy of the coils into manageable subsystems. The windings are cooled with superfluid helium II, operated at 1.8K and 1.2 atmospheres. The superior cooling capabilities of helium II have enabled the overall winding envelope to be minimized, providing a current density of 2367 A/CM/sup 2/, excluding substructure.

Not Available

1981-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Method for mapping charge pulses in semiconductor radiation detectors  

Science Conference Proceedings (OSTI)

An efficient method for determining the distribution of charge pulses produced by semiconductor detectors is presented. The method is based on a quasi-steady-state model for semiconductor detector operation. A complete description of the model and underlying assumptions is given. Mapping of charge pulses is accomplished by solving an adjoint carrier continuity equation. The solution of the adjoint equation yields Green`s function, a time- and position-dependent map that contains all possible charge pulses that can be produced by the detector for charge generated at discrete locations (e.g., by gamma-ray interactions). Because the map is generated by solving a single, time-dependent problem, the potential for reduction in computational effort over direct mapping methods is significant, particularly for detectors with complex electrode structures. In this paper, the adjoint equation is derived and the mapping method is illustrated for a simple case.

Prettyman, T.H.

1998-12-01T23:59:59.000Z

362

Hybrid high-temperature superconductor-semiconductor tunnel diode  

E-Print Network (OSTI)

We report the demonstration of hybrid high-Tc-superconductor-semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices were fabricated by our newly-developed mechanical bonding technique, resulting in high-Tc-semiconductor planar junctions acting as superconducting tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi2Sr2CaCu2O8+{\\delta} combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity - in good agreement with theoretical predictions for a d-wave superconductor-normal material junction, and similar to spectra obtained in scanning tunneling microscopy. Additional junctions are demonstrated using Bi2Sr2CaCu2O8+{\\delta} combined with graphite or Bi2Te3. Our results pave the way for new methods in unconventional superconductivity studies, novel materials and quantum technology applications.

Alex Hayat; Parisa Zareapour; Shu Yang F. Zhao; Achint Jain; Igor G. Savelyev; Marina Blumin; Zhijun Xu; Alina Yang; G. D. Gu; Harry E. Ruda; Shuang Jia; R. J. Cava; Aephraim M. Steinberg; Kenneth S. Burch

2013-01-09T23:59:59.000Z

363

Semiconductor light source with electrically tunable emission wavelength  

DOE Patents (OSTI)

A semiconductor light source comprises a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region.

Belenky, Gregory (Port Jefferson, NY); Bruno, John D. (Bowie, MD); Kisin, Mikhail V. (Centereach, NY); Luryi, Serge (Setauket, NY); Shterengas, Leon (Centereach, NY); Suchalkin, Sergey (Centereach, NY); Tober, Richard L. (Elkridge, MD)

2011-01-25T23:59:59.000Z

364

Method of plasma etching Ga-based compound semiconductors  

SciTech Connect

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Qiu, Weibin; Goddard, Lynford L.

2012-12-25T23:59:59.000Z

365

Semiconductor Nanocrystals-Based White Light Emitting Diodes  

Science Conference Proceedings (OSTI)

In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid state lighting, such as white light emitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement could cut the ever-increasing energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, we highlight the recent progress in semiconductor nanocrystals-based WLEDs, compare different approaches for generating white light, and discuss the benefits and challenges of the solid state lighting technology.

Dai, Quanqin [ORNL; Hu, Michael Z. [ORNL; Duty, Chad E [ORNL

2010-01-01T23:59:59.000Z

366

Semiconductor-Nanocrystals-Based White Light-Emitting Diodes  

Science Conference Proceedings (OSTI)

In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid-state lighting, such as white lightemitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid-state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement can cut the ever-increasing level of energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, the recent progress in semiconductor-nanocrystals-based WLEDs is highlighted, the different approaches for generating white light are compared, and the benefits and challenges of the solid-state lighting technology are discussed.

Dai, Quanqin [ORNL; Duty, Chad E [ORNL; Hu, Michael Z. [ORNL

2010-01-01T23:59:59.000Z

367

A comparative study of semiconductor-based plasmonic metamaterials  

E-Print Network (OSTI)

Recent metamaterial (MM) research faces several problems when using metal-based plasmonic components as building blocks for MMs. The use of conventional metals for MMs is limited by several factors: metals such as gold and silver have high losses in the visible and near-infrared (NIR) ranges and very large negative real permittivity values, and in addition, their optical properties cannot be tuned. These issues that put severe constraints on the device applications of MMs could be overcome if semiconductors are used as plasmonic materials instead of metals. Heavily doped, wide bandgap oxide semiconductors could exhibit both a small negative real permittivity and relatively small losses in the NIR. Heavily doped oxides of zinc and indium were already reported to be good, low loss alternatives to metals in the NIR range. Here, we consider these transparent conducting oxides (TCOs) as alternative plasmonic materials for many specific applications ranging from surface-plasmon-polariton waveguides to MMs with hype...

Naik, Gururaj V; 10.1016/j.metmat.2010.11.001

2011-01-01T23:59:59.000Z

368

Semiconductor laser devices having lateral refractive index tailoring  

DOE Patents (OSTI)

A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.

Ashby, C.I.H.; Hadley, G.R.; Hohimer, J.P.; Owyoung, A.

1989-06-15T23:59:59.000Z

369

Method of plasma etching GA-based compound semiconductors  

DOE Patents (OSTI)

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

Qiu, Weibin; Goddard, Lynford L.

2013-01-01T23:59:59.000Z

370

Method for measuring the drift mobility in doped semiconductors  

DOE Patents (OSTI)

A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorous. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells.

Crandall, Richard S. (Princeton, NJ)

1982-01-01T23:59:59.000Z

371

Method for measuring the drift mobility in doped semiconductors  

DOE Patents (OSTI)

A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorus. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells. 10 figs.

Crandall, R.S.

1982-03-09T23:59:59.000Z

372

Energy Conservation Through Water Usage Reduction in the Semiconductor Industry  

E-Print Network (OSTI)

The semiconductor industry uses large amounts of Ultrapure Water (UPW) in the wafer fabrication process. Producing UPW involves energy-intensive operations, such as membrane separations, ultraviolet lamps, and continuous pumping and recirculation systems. Indirect energy costs can also be allocated to steps in the UPW process. Motorola recognizes that by reducing UPW consumption, energy savings will result. Energy conservation can also be achieved by improving the UPW generation process itself and by recycling or reclaiming UPW and other water streams.

Mendicino, L.; McCormack, K.; Gibson, S.; Patton, B.; Lyon, D.; Covington, J.

1998-04-01T23:59:59.000Z

373

Semiconductor-based, large-area, flexible, electronic devices  

SciTech Connect

Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Goyal, Amit (Knoxville, TN)

2011-03-15T23:59:59.000Z

374

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors  

NLE Websites -- All DOE Office Websites (Extended Search)

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print The possibility of using electrons' spins in addition to their charge in information technology has created much enthusiasm for a new field of electronics popularly known as "spintronics." An intensely studied approach to obtaining spin-polarized carriers for data-storage devices is the use of diluted magnetic semiconductors created by doping ions like Mn, Fe, or Co having a net spin into a semiconducting host such as GaAs, ZnO, or GaN. The interaction among these spins leads to ferromagnetic order at low temperatures, which is necessary to create spin-polarized carriers. A research team working at ALS Beamline 4.0.2 and European Synchrotron Radiation Facility Beamline ID8 made a big leap forward in clarifying the microscopic picture of magnetism and anisotropy in Mn-doped GaAs by resolving localized and hybridized d states using angle-dependent x-ray magnetic circular dichroism (XMCD) measurements.

375

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors  

NLE Websites -- All DOE Office Websites (Extended Search)

Electronic Structure and Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print Wednesday, 29 November 2006 00:00 The possibility of using electrons' spins in addition to their charge in information technology has created much enthusiasm for a new field of electronics popularly known as "spintronics." An intensely studied approach to obtaining spin-polarized carriers for data-storage devices is the use of diluted magnetic semiconductors created by doping ions like Mn, Fe, or Co having a net spin into a semiconducting host such as GaAs, ZnO, or GaN. The interaction among these spins leads to ferromagnetic order at low temperatures, which is necessary to create spin-polarized carriers. A research team working at ALS Beamline 4.0.2 and European Synchrotron Radiation Facility Beamline ID8 made a big leap forward in clarifying the microscopic picture of magnetism and anisotropy in Mn-doped GaAs by resolving localized and hybridized d states using angle-dependent x-ray magnetic circular dichroism (XMCD) measurements.

376

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors  

NLE Websites -- All DOE Office Websites (Extended Search)

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print The possibility of using electrons' spins in addition to their charge in information technology has created much enthusiasm for a new field of electronics popularly known as "spintronics." An intensely studied approach to obtaining spin-polarized carriers for data-storage devices is the use of diluted magnetic semiconductors created by doping ions like Mn, Fe, or Co having a net spin into a semiconducting host such as GaAs, ZnO, or GaN. The interaction among these spins leads to ferromagnetic order at low temperatures, which is necessary to create spin-polarized carriers. A research team working at ALS Beamline 4.0.2 and European Synchrotron Radiation Facility Beamline ID8 made a big leap forward in clarifying the microscopic picture of magnetism and anisotropy in Mn-doped GaAs by resolving localized and hybridized d states using angle-dependent x-ray magnetic circular dichroism (XMCD) measurements.

377

Nonlinear fibre-optic devices pumped by semiconductor disk lasers  

Science Conference Proceedings (OSTI)

Semiconductor disk lasers offer a unique combination of characteristics that are particularly attractive for pumping Raman lasers and amplifiers. The advantages of disk lasers include a low relative noise intensity (-150 dB Hz{sup -1}), scalable (on the order of several watts) output power, and nearly diffraction-limited beam quality resulting in a high ({approx}70 % - 90 %) coupling efficiency into a single-mode fibre. Using this technology, low-noise fibre Raman amplifiers operating at 1.3 {mu}m in co-propagation configuration are developed. A hybrid Raman-bismuth doped fibre amplifier is proposed to further increase the pump conversion efficiency. The possibility of fabricating mode-locked picosecond fibre lasers operating under both normal and anomalous dispersion is shown experimentally. We demonstrate the operation of 1.38-{mu}m and 1.6-{mu}m passively mode-locked Raman fibre lasers pumped by 1.29-{mu}m and 1.48-{mu}m semiconductor disk lasers and producing 1.97- and 2.7-ps pulses, respectively. Using a picosecond semiconductor disk laser amplified with an ytterbium-erbium fibre amplifier, the supercontinuum generation spanning from 1.35 {mu}m to 2 {mu}m is achieved with an average power of 3.5 W. (invited paper)

Chamorovskiy, A Yu; Okhotnikov, Oleg G [Optoelectronics Research Center, Tampere University of Technology, Tampere (Finland)

2012-11-30T23:59:59.000Z

378

Implications of mercury interactions with band-gap semiconductor oxides  

SciTech Connect

Titanium dioxide is a well-known photooxidation catalyst. It will oxidize mercury in the presence of ultraviolet light from the sun and oxygen and/or moisture to form mercuric oxide. Several companies manufacture self-cleaning windows. These windows have a transparent coating of titanium dioxide. The titanium dioxide is capable of destroying organic contaminants in air in the presence of ultraviolet light from the sun, thereby keeping the windows clean. The commercially available self-cleaning windows were used to sequester mercury from oxygennitrogen mixtures. Samples of the self-cleaning glass were placed into specially designed photo-reactors in order to study the removal of elemental mercury from oxygennitrogen mixtures resembling air. The possibility of removing mercury from ambient air with a self-cleaning glass apparatus is examined. The intensity of 365-nm ultraviolet light was similar to the natural intensity from sunlight in the Pittsburgh region. Passive removal of mercury from the air may represent an option in lieu of, or in addition to, point source clean-up at combustion facilities. There are several common band-gap semiconductor oxide photocatalysts. Sunlight (both the ultraviolet and visible light components) and band-gap semiconductor particles may have a small impact on the global cycle of mercury in the environment. The potential environmental consequences of mercury interactions with band-gap semiconductor oxides are discussed. Heterogeneous photooxidation might impact the global transport of elemental mercury emanating from flue gases.

Granite, E.J.; King, W.P.; Stanko, D.C.; Pennline, H.W.

2008-09-01T23:59:59.000Z

379

Hung-Chia Yang  

NLE Websites -- All DOE Office Websites (Extended Search)

CA 94720 Office Location: 90-4130E (510) 486-4419 HCYang@lbl.gov This publications database is an ongoing project, and not all Division publications are represented here...

380

Junbing Yang resume  

NLE Websites -- All DOE Office Websites (Extended Search)

storage materials for transportation application Carbon nanotubes and carbon aerogels for supercapacitor applications Carbon nanotubes and conducting polymers flexible...

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Xiaoyu (Sara) Yang  

Science Conference Proceedings (OSTI)

... Collisional Energy Dependence of Peptide Ion Fragmentation. ... Ph.D., Herbicide Physiology and Biochemistry, The Ohio State University 2000 MS ...

2013-05-17T23:59:59.000Z

382

Dr. Jiann C. Yang  

Science Conference Proceedings (OSTI)

... transportation fire safety. He has co-authored over 100 archival and conference articles and two book chapters. He was ...

2013-08-09T23:59:59.000Z

383

yang-99.PDF  

NLE Websites -- All DOE Office Websites (Extended Search)

and W. O. Gallery, 1981: Atmospheric spectral transmittance and radiance: FASCOD1B, SPIE. Atmospheric Transmission, 277, 152-166. Goody, R., 1952: A statistical model for water...

384

Magnetism of Semiconductor-Based Magnetic Tunnel Junctions under Electric Field from First Principles  

SciTech Connect

Semiconductor magnetic tunnel junctions (MTJs), composed of diluted magnetic semiconductors (DMSs) sandwiching a semiconductor barrier, have potential applications in spintronics but their development has been slow due to the difficulty of controlling the magnetism of DMSs. In terms of density functional calculations for model semiconductor MTJs, (Zn,Co)O/ZnO/(Zn,Co)O and (Ga,Mn)N/GaN/(Ga,Mn)N, we show that the magnetic coupling between the transition metal ions in each DMS electrode of such semiconductor MTJs can be switched from ferromagnetic to antiferromagnetic, or vice versa, under the application of external electric field across the junctions. Our results suggest a possible avenue for the application of semiconductor MTJs.

Kan, E.; Xiang, H.; Yang, J.; Whangbo, M. H.

2009-06-01T23:59:59.000Z

385

Molecular Chemistry to the Fore: New Insights into the Fascinating World of Photoactive Colloidal Semiconductor Nanocrystals  

SciTech Connect

Colloidal semiconductor nanocrystals possess unique properties that are unmatched by other chromophores such as organic dyes or transition-metal complexes. These versatile building blocks have generated much scientific interest and found applications in bioimaging, tracking, lighting, lasing, photovoltaics, photocatalysis, thermoelectrics, and spintronics. Despite these advances, important challenges remain, notably how to produce semiconductor nanostructures with predetermined architecture, how to produce metastable semiconductor nanostructures that are hard to isolate by conventional syntheses, and how to control the degree of surface loading or valence per nanocrystal. Molecular chemists are very familiar with these issues and can use their expertise to help solve these challenges. In this Perspective, we present our groups recent work on bottom-up molecular control of nanoscale composition and morphology, low-temperature photochemical routes to semiconductor heterostructures and metastable phases, solar-to-chemical energy conversion with semiconductor-based photocatalysts, and controlled surface modification of colloidal semiconductors that bypasses ligand exchange.

Vela-Becerra, Javier [Ames Laboratory

2013-02-01T23:59:59.000Z

386

Group I-III-VI.sub.2 semiconductor films for solar cell application  

SciTech Connect

This invention relates to an improved thin film solar cell with excellent electrical and mechanical integrity. The device comprises a substrate, a Group I-III-VI.sub.2 semiconductor absorber layer and a transparent window layer. The mechanical bond between the substrate and the Group I-III-VI.sub.2 semiconductor layer is enhanced by an intermediate layer between the substrate and the Group I-III-VI.sub.2 semiconductor film being grown. The intermediate layer contains tellurium or substitutes therefor, such as Se, Sn, or Pb. The intermediate layer improves the morphology and electrical characteristics of the Group I-III-VI.sub.2 semiconductor layer.

Basol, Bulent M. (Redondo Beach, CA); Kapur, Vijay K. (Northridge, CA)

1991-01-01T23:59:59.000Z

387

Coherent multi-exciton dynamics in semiconductor nanostructures via two-dimensional Fourier transform optical spectroscopy  

E-Print Network (OSTI)

The Coulomb correlations between photoexcited charged particles in materials such as photosynthetic complexes, conjugated polymer systems, J-aggregates, and bulk or nanostructured semiconductors produce a hierarchy of ...

Stone, Katherine Walowicz

2009-01-01T23:59:59.000Z

388

Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate  

DOE Patents (OSTI)

A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.

McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN); Chisholm, Matthew F. (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

389

2012 DEFECTS IN SEMICONDUCTORS GORDON RESEARCH CONFERENCE, AUGUST 12-17, 2012  

Science Conference Proceedings (OSTI)

The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

GLASER, EVAN

2012-08-17T23:59:59.000Z

390

Frequency modulation on single sideband using controlled dynamics of an optically injected semiconductor laser  

E-Print Network (OSTI)

locked semicon- ductor lasers with delayed optoelectronicgeneration using semiconductor laser dynamics, IEEE J. Sel.in optically-injected laser diodes, Opt. Commun. , vol.

Chan, Sze-Chun; Liu, Jia-Ming

2006-01-01T23:59:59.000Z

391

Comment on "Analysis of quantum coherent semiconductor quantum dot p-i-n junction photovoltaic cells"  

E-Print Network (OSTI)

This is a comment on PRL paper by A.P. Kirk "Analysis of quantum coherent semiconductor quantum dot p-i-n junction photovoltaic cells"

Scully, Marlan O

2010-01-01T23:59:59.000Z

392

Development of fluorescent semi-conductor nanocrystal conjugates for in vitro and in vivo imaging applications  

E-Print Network (OSTI)

Semiconductor nanocrystals, also known as quantum dots (QDs), are promising imaging probes with characteristic optical properties: tunable bandgap from visible to infrared, narrow and symmetric emission features, broad ...

Han, Hee-Sun, Ph. D. Massachusetts Institute of Technology

2012-01-01T23:59:59.000Z

393

Global product development in semiconductor industry : Intel -- Tick-Tock product development cadence  

E-Print Network (OSTI)

This thesis investigates on changes in semiconductor industry's product development methodology by following Intel's product development from year 2000. Intel was challenged by customer's preference change, competitors new ...

Park, Cheolmin, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

394

Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications  

DOE Patents (OSTI)

The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

Hui, Rongqing (Lenexa, KS); Jiang,Hong-Xing (Manhattan, KS); Lin, Jing-Yu (Manhattan, KS)

2008-03-18T23:59:59.000Z

395

Optical Nonlinearities and Ultrafast Carrier Dynamics in Semiconductor Quantum Dots  

SciTech Connect

Low-dimensional semiconductors have attracted great interest due to the potential for tailoring their linear and nonlinear optical properties over a wide-range. Semiconductor nanocrystals (NC's) represent a class of quasi-zero-dimensional objects or quantum dots. Due to quantum cordhement and a large surface-to-volume ratio, the linear and nonlinear optical properties, and the carrier dynamics in NC's are significantly different horn those in bulk materials. napping at surface states can lead to a fast depopulation of quantized states, accompanied by charge separation and generation of local fields which significantly modifies the nonlinear optical response in NC's. 3D carrier confinement also has a drastic effect on the energy relaxation dynamics. In strongly confined NC's, the energy-level spacing can greatly exceed typical phonon energies. This has been expected to significantly inhibit phonon-related mechanisms for energy losses, an effect referred to as a phonon bottleneck. It has been suggested recently that the phonon bottleneck in 3D-confined systems can be removed due to enhanced role of Auger-type interactions. In this paper we report femtosecond (fs) studies of ultrafast optical nonlinearities, and energy relaxation and trap ping dynamics in three types of quantum-dot systems: semiconductor NC/glass composites made by high temperature precipitation, ion-implanted NC's, and colloidal NC'S. Comparison of ultrafast data for different samples allows us to separate effects being intrinsic to quantum dots from those related to lattice imperfections and interface properties.

Klimov, V.; McBranch, D.; Schwarz, C.

1998-08-10T23:59:59.000Z

396

Three-terminal semiconductor laser for wave mixing  

E-Print Network (OSTI)

We suggest and analyze the concept of a semiconductor laser device that incorporates two basic ideas: (i) dual-wavelength generation of two optical fields on the interband transitions with independent control of each field in a three-terminal "transistor" scheme, and (ii) generation of infrared radiation in the 3-300 mum range due to nonlinear wave mixing of the above optical fields in the same laser cavity. Due to inversionless nature of the difference frequency generation and inherently low threshold current, the laser can be capable of continuous room-temperature operation in the mid/far-infrared and THz range.

Belyanin, Alexey; Kocharovsky, V.; Kocharovsky, V.; Scully, Marlan O.

2002-01-01T23:59:59.000Z

397

Light emission patterns from stadium-shaped semiconductor microcavity lasers  

E-Print Network (OSTI)

We study light emission patterns from stadium-shaped semiconductor (GaAs) microcavity lasers theoretically and experimentally. Performing systematic wave calculations for passive cavity modes, we demonstrate that the averaging by low-loss modes, such as those realized in multi-mode lasing, generates an emission pattern in good agreement with the ray model's prediction. In addition, we show that the dependence of experimental far-field emission patterns on the aspect ratio of the stadium cavity is well reproduced by the ray model.

Susumu Shinohara; Takehiro Fukushima; Takahisa Harayama

2007-06-01T23:59:59.000Z

398

Activation of molecular catalysts using semiconductor quantum dots  

DOE Patents (OSTI)

Photocatalytic materials based on coupling of semiconductor nanocrystalline quantum dots (NQD) and molecular catalysts. These materials have capability to drive or catalyze non-spontaneous chemical reactions in the presence of visible radiation, ultraviolet radiation, or both. The NQD functions in these materials as a light absorber and charge generator. Following light absorption, the NQD activates a molecular catalyst adsorbed on the surface of the NQD via transfer of one or more charges (either electrons or electron-holes) from the NQD to the molecular catalyst. The activated molecular catalyst can then drive a chemical reaction. A photoelectrolytic device that includes such photocatalytic materials is also described.

Meyer, Thomas J. (Chapel Hill, NC); Sykora, Milan (Los Alamos, NM); Klimov, Victor I. (Los Alamos, NM)

2011-10-04T23:59:59.000Z

399

Bistability of Cation Interstitials in II-VI Semiconductors  

DOE Green Energy (OSTI)

The stability of cation interstitials in II-VI semiconductors is studied using ab initio methods. We find that interstitials in the neutral charge state are more stable in the tetrahedral interstitial site near the cation, whereas in the (2+) charge state, they are more stable near the anion. The diffusion energy barrier changes when the defect charge state changes. Therefore, if electrons/holes are taken from the defect level by light, changing its charge state, the interstitial atom will be able to diffuse almost spontaneously due to a reduced diffusion barrier.

Wei, S. H.; Dalpian, G. M.

2005-11-01T23:59:59.000Z

400

Spin-polarized current oscillations in diluted magnetic semiconductor multiple quantum wells Manuel Bejar,1  

E-Print Network (OSTI)

Spin-polarized current oscillations in diluted magnetic semiconductor multiple quantum wells Manuel and charge dynamics of electrons in n-doped II-VI semiconductor multiple quantum wells when one or more quantum wells are doped with Mn. The interplay between strongly nonlinear interwell charge transport

Sánchez, David

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Ultrafast shift and injection currents observed in wurtzite semiconductors via emitted terahertz radiation  

E-Print Network (OSTI)

and injection currents have been generated in bulk GaAs and strained GaAs quantum wells QWs , respectivelyUltrafast shift and injection currents observed in wurtzite semiconductors via emitted terahertz; published online 18 November 2005 Shift and injection currents are generated in the wurtzite semiconductors

Van Driel, Henry M.

402

Density-gradient theory: a macroscopic approach to quantum confinement and tunneling in semiconductor devices  

Science Conference Proceedings (OSTI)

Density-gradient theory provides a macroscopic approach to modeling quantum transport that is particularly well adapted to semiconductor device analysis and engineering. After some introductory observations, the basis of the theory in macroscopic and ... Keywords: Continuum, Density-gradient, Electron transport, Quantum confinement, Quantum tunneling, Semiconductor device simulation, Thermodynamics

M. G. Ancona

2011-06-01T23:59:59.000Z

403

Using the FDM and ANP to construct a sustainability balanced scorecard for the semiconductor industry  

Science Conference Proceedings (OSTI)

This paper proposed a sustainability balanced scorecard (SBSC) framework to measure the sustainable performance of the semiconductor industry. Based on the principle of four perspectives of balanced scorecard (BSC), of which two were changed from the ... Keywords: Analytic network process, Fuzzy Delphi method, Semiconductor industry, Sustainability balanced scorecard

Chia-Wei Hsu; Allen H. Hu; Cherng-Ying Chiou; Ta-Che Chen

2011-09-01T23:59:59.000Z

404

Performance of a parallel algebraic multilevel preconditioner for stabilized finite element semiconductor device modeling  

Science Conference Proceedings (OSTI)

In this study results are presented for the large-scale parallel performance of an algebraic multilevel preconditioner for solution of the drift-diffusion model for semiconductor devices. The preconditioner is the key numerical procedure determining ... Keywords: Drift-diffusion, Finite element, Graph partitioning, Multigrid, Multilevel preconditioners, Newton-Krylov, Nonsmoothed aggregation, Schwarz domain decomposition, Semiconductor devices

Paul T. Lin; John N. Shadid; Marzio Sala; Raymond S. Tuminaro; Gary L. Hennigan; Robert J. Hoekstra

2009-09-01T23:59:59.000Z

405

Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes  

DOE Patents (OSTI)

A luminescent semiconductor nanocrystal compound is described which is capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation (luminescing) in a narrow wavelength band and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source (of narrow or broad bandwidth) or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The luminescent semiconductor nanocrystal compound is linked to an affinity molecule to form an organo luminescent semiconductor nanocrystal probe capable of bonding with a detectable substance in a material being analyzed, and capable of emitting electromagnetic radiation in a narrow wavelength band and/or absorbing, scattering, or diffracting energy when excited by an electromagnetic radiation source (of narrow or broad bandwidth) or a particle beam. The probe is stable to repeated exposure to light in the presence of oxygen and/or other radicals. Further described is a process for making the luminescent semiconductor nanocrystal compound and for making the organo luminescent semiconductor nanocrystal probe comprising the luminescent semiconductor nanocrystal compound linked to an affinity molecule capable of bonding to a detectable substance. A process is also described for using the probe to determine the presence of a detectable substance in a material.

Weiss, Shimon (Pinole, CA); Bruchez, Jr., Marcel (Albany, CA); Alivisatos, Paul (Oakland, CA)

1999-01-01T23:59:59.000Z

406

Spline regression based feature extraction for semiconductor process fault detection using support vector machine  

Science Conference Proceedings (OSTI)

Quality control is attracting more attention in semiconductor market due to harsh competition. This paper considers Fault Detection (FD), a well-known philosophy in quality control. Conventional methods, such as non-stationary SPC chart, PCA, PLS, and ... Keywords: Fault detection, Feature extraction, Semiconductor manufacturing, Spline regression, Support vector machine

Jonghyuck Park; Ick-Hyun Kwon; Sung-Shick Kim; Jun-Geol Baek

2011-05-01T23:59:59.000Z

407

STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM OPTO SEMICONDUCTORS  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5 14:37 FR IPL DOE CH 630 252 2779 TO RGCP-HQ P.02/04 5 14:37 FR IPL DOE CH 630 252 2779 TO RGCP-HQ P.02/04 * * STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM OPTO SEMICONDUCTORS FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS UNDER DOE CONTRACT NO. DE-FC26-05NT42341, SUBCONTRACT QZ001; W(A)-05-017, CH-1280 The Petitioner, OSRAM Opto Semiconductor (Osram) was awarded a subcontract under this cooperative agreement for the performance of work entitled, "Scaling Up KiloLumen Solid- State Lighting Exceeding 100 LPW via Remote Phosphor." The cooperative agreement was awarded to Light Prescriptions Innovators, LLC (LPI). The purpose of the cooperative agreement is to develop a new white light emitting diode (LED) light source that emits 1000 lumens with an efficacy exceeding 100 lumens per watt (LPW). The new white LED light source will use multiple

408

Low-temperature magnetization of (Ga,Mn) As semiconductors  

E-Print Network (OSTI)

We report on a comprehensive study of the ferromagnetic moment per Mn atom in (Ga,Mn)As ferromagnetic semiconductors. Theoretical discussion is based on microscopic calculations and on an effective model of Mn local moments antiferromagnetically coupled to valence band hole spins. The validity of the effective model over the range of doping studied is assessed by comparing with microscopic tight-binding/coherent-potential approximation calculations. Using the virtual crystal k center dot p model for hole states, we evaluate the zero-temperature mean-field contributions to the magnetization from the hole kinetic and exchange energies, and magnetization suppression due to quantum fluctuations of Mn moment orientations around their mean-field ground state values. Experimental low-temperature ferromagnetic moments per Mn are obtained by superconducting quantum interference device and x-ray magnetic circular dichroism measurements in a series of (Ga,Mn)As semiconductors with nominal Mn doping ranging from similar to 2 to 8%. Hall measurements in as-grown and annealed samples are used to estimate the number of uncompensated substitutional Mn moments. Based on our comparison between experiment and theory we conclude that all these Mn moments in high quality (Ga,Mn)As materials have nearly parallel ground state alignment.

Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

2006-01-01T23:59:59.000Z

409

Method and apparatus for thermal processing of semiconductor substrates  

DOE Patents (OSTI)

An improved apparatus and method for thermal processing of semiconductor wafers. The apparatus and method provide the temperature stability and uniformity of a conventional batch furnace as well as the processing speed and reduced time-at-temperature of a lamp-heated rapid thermal processor (RTP). Individual wafers are rapidly inserted into and withdrawn from a furnace cavity held at a nearly constant and isothermal temperature. The speeds of insertion and withdrawal are sufficiently large to limit thermal stresses and thereby reduce or prevent plastic deformation of the wafer as it enters and leaves the furnace. By processing the semiconductor wafer in a substantially isothermal cavity, the wafer temperature and spatial uniformity of the wafer temperature can be ensured by measuring and controlling only temperatures of the cavity walls. Further, peak power requirements are very small compared to lamp-heated RTPs because the cavity temperature is not cycled and the thermal mass of the cavity is relatively large. Increased speeds of insertion and/or removal may also be used with non-isothermal furnaces.

Griffiths, Stewart K. (Danville, CA); Nilson, Robert H. (Cardiss, CA); Mattson, Brad S. (Los Gatos, CA); Savas, Stephen E. (Alameda, CA)

2000-01-01T23:59:59.000Z

410

High-efficiency photovoltaics based on semiconductor nanostructures  

SciTech Connect

The objective of this project was to exploit a variety of semiconductor nanostructures, specifically semiconductor quantum wells, quantum dots, and nanowires, to achieve high power conversion efficiency in photovoltaic devices. In a thin-film device geometry, the objectives were to design, fabricate, and characterize quantum-well and quantum-dot solar cells in which scattering from metallic and/or dielectric nanostructures was employed to direct incident photons into lateral, optically confined paths within a thin (~1-3um or less) device structure. Fundamental issues concerning nonequilibrium carrier escape from quantum-confined structures, removal of thin-film devices from an epitaxial growth substrate, and coherent light trapping in thin-film photovoltaic devices were investigated. In a nanowire device geometry, the initial objectives were to engineer vertical nanowire arrays to optimize optical confinement within the nanowires, and to extend this approach to core-shell heterostructures to achieve broadspectrum absorption while maintaining high opencircuit voltages. Subsequent work extended this approach to include fabrication of nanowire photovoltaic structures on low-cost substrates.

Yu, Paul K.L. [University of California, San Diego; Yu, Edward T. [University of Texas at Austin; Wang, Deli [University of California, San Diego

2011-10-31T23:59:59.000Z

411

Helicon wave excitation to produce energetic electrons for manufacturing semiconductors  

DOE Patents (OSTI)

A helicon plasma source is controlled by varying the axial magnetic field or rf power controlling the formation of the helicon wave. An energetic electron current is carried on the wave when the magnetic field is 90 G; but there is minimal energetic electron current when the magnetic field is 100 G in one particular plasma source. Similar performance can be expected from other helicon sources by properly adjusting the magnetic field and power to the particular geometry. This control for adjusting the production of energetic electrons can be used in the semiconductor and thin-film manufacture process. By applying energetic electrons to the insulator layer, such as silicon oxide, etching ions are attracted to the insulator layer and bombard the insulator layer at higher energy than areas that have not accumulated the energetic electrons. Thus, silicon and metal layers, which can neutralize the energetic electron currents will etch at a slower or non-existent rate. This procedure is especially advantageous in the multilayer semiconductor manufacturing because trenches can be formed that are in the range of 0.18--0.35 mm or less. 16 figs.

Molvik, A.W.; Ellingboe, A.R.

1998-10-20T23:59:59.000Z

412

Femtosecond laser interactions with semiconductor and dielectric materials  

SciTech Connect

Electronic excitation-relaxation processes induced by ultra-short laser pulses are studied numerically for semiconductors and dielectric materials (Si, quartz). A detailed kinetic approach is used in the calculations accounting for electron-photon-phonon, electron-phonon and electron-electron scatterings. In addition, both laser field ionization ranging from multi-photon to tunneling one, and electron impact (avalanche) ionization processes are included in the model. Based on the performed calculations we study the relaxation time as a function of laser parameters. It is shown that this time depends on the density of the created free carriers, which in turn is a nonlinear function of laser intensity. In addition, a simple damage criterion is proposed based on the mean electron energy density rather than on critical free electron density. This criterion gives a reasonable agreement with the available experimental data practically without adjustable parameters. Furthermore, the performed modeling provides energy absorbed in the target, conditions for damage of dielectric materials, as well as conditions for surface plasmon excitation and for periodic surface structure formation on the surface of semiconductor materials.

Shcheblanov, Nikita S.; Derrien, Thibault J. Y.; Itina, Tatiana E. [Laboratoire Hubert Curien, CNRS//Universite Jeann Monnet, 18 rue du Prof. Benoit Lauras, 42000 Saint-Etienne (France); Laboratoire Lasers, Plasmas et Procedes Photoniques, CNRS//Universite de la Mediterranee, 162 avenue de Luminy, 13288, Marseille (France); Laboratoire Hubert Curien, CNRS//Universite Jeann Monnet, 18 rue du Prof. Benoit Lauras, 42000 Saint-Etienne (France)

2012-07-30T23:59:59.000Z

413

Glass, Plastic and Semiconductors: Packaging Techniques for Miniature Optoelectric Components  

Science Conference Proceedings (OSTI)

At Lawrence Livermore National Laboratory, they have extensive experience with the design and development of miniature photonic systems which require novel packaging schemes. Over the years they have developed silicon micro-optical benches to serve as a stable platform for precision mounting of optical and electronic components. They have developed glass ball lenses that can be fabricated in-situ on the microbench substrate. They have modified commercially available molded plastic fiber ribbon connectors (MT) and added thin film multilayer semiconductor coatings to create potentially low-cost wavelength combiners and wavelength selective filters. They have fabricated both vertical-cavity and in-plane semiconductor lasers and amplifiers, and have packaged these and other components into several miniature photonics systems. For example, they have combined the silicon optical bench with standard electronic packaging techniques and the custom-made wavelength-selective filters to develop a four-wavelength wavelength-division-multiplexing transmitter module mounted in a standard 120-pin ceramic PGA package that couples light from several vertical-cavity-surface-emitting-laser arrays into one multimode fiber-ribbon array. The coupling loss can be as low as 2dB, and the transmitters can be operated at over 1.25 GHz. While these systems were not designed for biomedical or environmental applications, the concepts and techniques are general and widely applicable.

Pocha, M.D.; Garrett, H.E.; Patel, R.R.; Jones II, L.M.; Larson, M.C.; Emanuel, M.A.; Bond, S.W.; Deri, R.J.; Drayton, R.F.; Peterson, H.E.; Lowry, M.E.

1999-12-20T23:59:59.000Z

414

Characterization of Hydrogen Complex Formation in III-V Semiconductors  

DOE Green Energy (OSTI)

Atomic hydrogen has been found to react with some impurity species in semiconductors. Hydrogenation is a methodology for the introduction of atomic hydrogen into the semiconductor for the express purpose of forming complexes within the material. Efforts to develop hydrogenation as an isolation technique for AlGaAs and Si based devices failed to demonstrate its commercial viability. This was due in large measure to the low activation energies of the formed complexes. Recent studies of dopant passivation in long wavelength (0.98 - 1.55?m) materials suggested that for the appropriate choice of dopants much higher activation energies can be obtained. This effort studied the formation of these complexes in InP, This material is extensively used in optoelectronics, i.e., lasers, modulators and detectors. The experimental techniques were general to the extent that the results can be applied to other areas such as sensor technology, photovoltaics and to other material systems. The activation energies for the complexes have been determined and are reported in the scientific literature. The hydrogenation process has been shown by us to have a profound effect on the electronic structure of the materials and was thoroughly investigated. The information obtained will be useful in assessing the long term reliability of device structures fabricated using this phenomenon and in determining new device functionalities.

Williams, Michael D.

2006-09-28T23:59:59.000Z

415

Synthesis and catalytic properties of metal and semiconductor nanoclusters  

SciTech Connect

Synthesis of metal or semiconductor nanoclusters in microheterogeneous oil-continuous inverse micelle systems is discussed. We focus on synthesis and catalytic properties of palladium, iron, and iron sulfide nanoclusters. Cluster size-control is achieved by changing the micelle size which is determined by small angle neutron scattering (SANS) and chosen to produce cluster in size range of 1-20 nm. Cluster sizes were determined by either transmission electron microscopy (TEM) or small-angle x-ray scattering (SAXS). Cluster structure was determined by either x-ray or electron diffraction. In the case of Fe nanoclusters the crystal structure depended on the chemical nature of the surfactant micelle used in the synthesis, illustrating the important role of the surfactant during the growth process. Results of in-situ pyrene hydrogenation using size-selected Pd clusters show a significant increase in activity/total surface area as the size decreases. These clusters also proved effective as unsupported catalysts for direct coal hydropyrolysis, even at very low metal concentrations. Synthesis and optical features of a new semiconductor cluster material, FeS{sub 2}, is discussed with regard to its use in photocatalysis. Application of FeS{sub 2} in coal hydrogenolysis reactions has improved yields of short chain hydrocarbons significantly compared to conventional FeS{sub 2} powders.

Wilcoxon, J.P.; Martino, T.; Klavetter, E.; Sylwester, A.P.

1993-08-01T23:59:59.000Z

416

Argonne CNM News: State-of-the-Art Diamond Semiconductor Technology  

NLE Websites -- All DOE Office Websites (Extended Search)

State-of-the-Art Diamond Semiconductor Technology Licensed to AKHAN Technologies State-of-the-Art Diamond Semiconductor Technology Licensed to AKHAN Technologies The U.S. Department of Energy's Argonne National Laboratory announced today that the laboratory has granted AKHAN Technologies, Inc., exclusive diamond semiconductor application licensing rights to breakthrough low-temperature diamond deposition technology developed by Argonne's Center for Nanoscale Materials (CNM). The method allows for the deposition of nanocrystalline diamond on a variety of wafer substrate materials at temperatures as low as 400°C, highly advantageous for integration with processed semiconductor electronic materials and resulting in the deposition of low-defect nanocrystalline diamond (NCD) thin films. The combination of CNM's low-temperature diamond technology with the AKHAN Miraj Diamond(tm) process represents the state of the art in diamond semiconductor thin-film technology.

417

Band anticrossing effects in highly mismatched semiconductor alloys  

DOE Green Energy (OSTI)

The first five chapters of this thesis focus on studies of band anticrossing (BAC) effects in highly electronegativity- mismatched semiconductor alloys. The concept of bandgap bowing has been used to describe the deviation of the alloy bandgap from a linear interpolation. Bowing parameters as large as 2.5 eV (for ZnSTe) and close to zero (for AlGaAs and ZnSSe) have been observed experimentally. Recent advances in thin film deposition techniques have allowed the growth of semiconductor alloys composed of significantly different constituents with ever- improving crystalline quality (e.g., GaAs{sub 1-x}N{sub x} and GaP{sub 1-x}N{sub x} with x {approx}< 0.05). These alloys exhibit many novel and interesting properties including, in particular, a giant bandgap bowing (bowing parameters > 14 eV). A band anticrossing model has been developed to explain these properties. The model shows that the predominant bowing mechanism in these systems is driven by the anticrossing interaction between the localized level associated with the minority component and the band states of the host. In this thesis I discuss my studies of the BAC effects in these highly mismatched semiconductors. It will be shown that the results of the physically intuitive BAC model can be derived from the Hamiltonian of the many-impurity Anderson model. The band restructuring caused by the BAC interaction is responsible for a series of experimental observations such as a large bandgap reduction, an enhancement of the electron effective mass, and a decrease in the pressure coefficient of the fundamental gap energy. Results of further experimental investigations of the optical properties of quantum wells based on these materials will be also presented. It will be shown that the BAC interaction occurs not only between localized states and conduction band states at the Brillouin zone center, but also exists over all of k-space. Finally, taking ZnSTe and ZnSeTe as examples, I show that BAC also occurs between localized states and the valence band states. Soft x-ray fluorescence experiments provide direct evidence of the BAC interaction in these systems. In the final chapter of the thesis, I describe and summarize my studies of optical properties of wurtzite InN and related alloys. Early studies performed on InN films grown by sputtering techniques suggested a direct bandgap of {approx}1.9 eV for this semiconductor. Very recently, high-quality InN films with much higher mobility have become available by using the molecular beam epitaxy growth method. Optical experiments carried out on these samples reveal a narrow bandgap for InN of 0.77 eV, much lower than the previously accepted value. Optical properties of InGaN and InAlN ternaries on the In rich side have also been characterized and are found to be consistent with the narrow bandgap of InN. The bandgap bowing parameters in these alloys were determined. In the context of these findings, the bandgap energies of InGaN and InAlN were found to cover a wide spectral range from the infrared for InN to the ultraviolet for GaN and deep ultraviolet for AlN. The significance of this work is rooted in many important applications of nitride semiconductors in optoelectronics and solar energy conversion devices.

Wu, Junqiao

2002-09-09T23:59:59.000Z

418

Oxide Ferromagnetic Semiconductors for Spin-Electronic Transprt  

SciTech Connect

The objective of this research was to investigate the viability of oxide magnetic semiconductors as potential materials for spintronics. We identified some members of the solid solution series of ilmenite (FeTiO3) and hematite (Fe2O3), abbreviated as (IH) for simplicity, for our investigations based on their ferromagnetic and semiconducting properties. With this objective in focus we limited our investigations to the following members of the modified Fe-titanates: IH33 (ilmenitehematite with 33 atomic percent hematite), IH45 (ilmenite-hematite with 45 atomic percent hematite), Mn-substituted ilmenite (Mn-FeTiO3), and Mn-substituted pseudobrookite (Mn- Fe2TiO5). All of them are: 1. wide bandgap semiconductors with band gaps ranging in values between 2.5 to 3.5 eV; 2. n-type semiconductors; 3.they exhibit well defined magnetic hysteresis loops and 4. their magnetic Curie points are greater than 400K. Ceramic, film and single crystal samples were studied and based on their properties we produced varistors (also known as voltage dependent resistors) for microelectronic circuit protection from power surges, three-terminal microelectronic devices capable of generating bipolar currents, and an integrated structured device with controlled magnetic switching of spins. Eleven refereed journal papers, three refereed conference papers and three invention disclosures resulted from our investigations. We also presented invited papers in three international conferences and one national conference. Furthermore two students graduated with Ph.D. degrees, three with M.S. degrees and one with B.S. degree. Also two post-doctoral fellows were actively involved in this research. We established the radiation hardness of our devices in collaboration with a colleague in an HBCU institution, at the Cyclotron Center at Texas A&M University, and at DOE National Labs (Los Alamos and Brookhaven). It is to be appreciated that we met most of our goals and expanded vastly the scope of research by including investigations of Mn-FeTiO3, Mn-Fe2TiO5 and by producing a novel three terminal device capable of generating bipolar currents besides producing radiation resistant varistors and a magnetically switchable device. Furthermore we conclusively established the radiation hardness of the four modified iron titanates we studied. In all our publications, conference and seminar presentations, dissertations and theses sponsorship of DOE has been acknowledged

Dr. R. K. Pandey, Cudworth Endowed Professor (Professor Emeritus of The Unviersity of Alabama) Ingram Endowed Professor, Ingram School of Engineering and Physics Department, Texas State University, San Marocs, TX78666

2008-11-24T23:59:59.000Z

419

GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

A GaN based depletion mode metal oxide semiconductor field effect transistor (MOSFET) was demonstrated using Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as the gate dielectric. The MOS gate reverse breakdown voltage was > 35V which was significantly improved from 17V of Pt Schottky gate on the same material. A maximum extrinsic transconductance of 15 mS/mm was obtained at V{sub ds} = 30 V and device performance was limited by the contact resistance. A unity current gain cut-off frequency, f{sub {tau}}, and maximum frequency of oscillation, f{sub max} of 3.1 and 10.3 GHz, respectively, were measured at V{sub ds} = 25 V and V{sub gs} = {minus}20 V.

Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Schurman, M.J.

1999-03-02T23:59:59.000Z

420

Transforming the Lighting Sector with Semiconductor Lighting Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

17-TED-000924-9/27 SR#2000-2333C 17-TED-000924-9/27 SR#2000-2333C Transforming the Lighting Sector With Semiconductor Lighting Technologies Thomas Drennen Sandia National Laboratories Roland Haitz Agilent Technologies Jeffrey Tsao E20 Communications Sandia National Laboratories USAEE/IAEE Annual Meetings Philadelphia, PA September 24-27, 2000 Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy under Contract DE-AC04-94AL85000 2 6217-TED-000924-9/27 SR#2000-2333C Overview * Introduction * U.S. Lighting Demand * Evolution of LEDs * The LED Simulation Model (LEDSim) * Results 3 6217-TED-000924-9/27 SR#2000-2333C Introduction 0 50 100 150 200 1970 1980 1990 2000 2010 2020 Efficiency (lm/W) Year Incandescent Halogen Fluorescent Semi- conductor

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421

High gain photoconductive semiconductor switch having tailored doping profile zones  

SciTech Connect

A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.

Baca, Albert G. (Albuquerque, NM); Loubriel, Guillermo M. (Albuquerque, NM); Mar, Alan (Albuquerque, NM); Zutavern, Fred J (Albuquerque, NM); Hjalmarson, Harold P. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Zipperian, Thomas E. (Edgewood, NM); O' Malley, Martin W. (Edgewood, NM); Helgeson, Wesley D. (Albuquerque, NM); Denison, Gary J. (Sandia Park, NM); Brown, Darwin J. (Albuquerque, NM); Sullivan, Charles T. (Albuquerque, NM); Hou, Hong Q. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

422

System for characterizing semiconductor materials and photovoltaic devices through calibration  

DOE Patents (OSTI)

A method and apparatus for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby.

Sopori, Bhushan L. (Denver, CO); Allen, Larry C. (Arvada, CO); Marshall, Craig (Littleton, CO); Murphy, Robert C. (Golden, CO); Marshall, Todd (Littleton, CO)

1998-01-01T23:59:59.000Z

423

Improved Thermoelectric Devices: Advanced Semiconductor Materials for Thermoelectric Devices  

SciTech Connect

Broad Funding Opportunity Announcement Project: Phononic Devices is working to recapture waste heat and convert it into usable electric power. To do this, the company is using thermoelectric devices, which are made from advanced semiconductor materials that convert heat into electricity or actively remove heat for refrigeration and cooling purposes. Thermoelectric devices resemble computer chips, and they manage heat by manipulating the direction of electrons at the nanoscale. These devices arent new, but they are currently too inefficient and expensive for widespread use. Phononic Devices is using a high-performance, cost-effective thermoelectric design that will improve the devices efficiency and enable electronics manufacturers to more easily integrate them into their products.

None

2009-12-11T23:59:59.000Z

424

Band engineering in dilute nitride and bismide semiconductor lasers  

E-Print Network (OSTI)

Highly mismatched semiconductor alloys such as GaNAs and GaBiAs have several novel electronic properties, including a rapid reduction in energy gap with increasing x and also, for GaBiAs, a strong increase in spin orbit- splitting energy with increasing Bi composition. We review here the electronic structure of such alloys and their consequences for ideal lasers. We then describe the substantial progress made in the demonstration of actual GaInNAs telecomm lasers. These have characteristics comparable to conventional InP-based devices. This includes a strong Auger contribution to the threshold current. We show, however, that the large spin-orbit-splitting energy in GaBiAs and GaBiNAs could lead to the suppression of the dominant Auger recombination loss mechanism, finally opening the route to e?fficient temperature-stable telecomm and longer wavelength lasers with significantly reduced power consumption.

Christopher A. Broderick; Muhammad Usman; Stephen J. Sweeney; Eoin P. O'Reilly

2012-08-31T23:59:59.000Z

425

Subtle Chemistry of Colloidal, Quantum-Confined Semiconductor Nanostructures  

SciTech Connect

Nanoscale colloidal semiconductor structures with at least one dimension small enough to experience quantum confinement effects have captured the imagination and attention of scientists interested in controlling various chemical and photophysical processes. Aside from having desirable quantum confinement properties, colloidal nanocrystals are attractive because they are often synthesized in low-temperature, low-cost, and potentially scalable manners using simple benchtop reaction baths. Considerable progress in producing a variety of shapes, compositions, and complex structures has been achieved. However, there are challenges to overcome in order for these novel materials to reach their full potential and become new drivers for commercial applications. The final shape, composition, nanocrystal-ligand structure, and size can depend on a delicate interplay of precursors, surface ligands, and other compounds that may or may not participate in the reaction. In this Perspective, we discuss current efforts toward better understanding how the reactivity of the reagents can be used to produce unique and complex nanostructures.

Hughes, B. K.; Luther, J. M.; Beard, M. C.

2012-06-26T23:59:59.000Z

426

Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers  

Science Conference Proceedings (OSTI)

Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a {approx} 200 {micro}s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and increased reliability. The high-level requirements on the semiconductor lasers involve reliability, price points on a price-per-Watt basis, and a set of technical requirements. The technical requirements for the amplifier design in reference 1 are discussed in detail and are summarized in Table 1. These values are still subject to changes as the overall laser system continues to be optimized. Since pump costs can be a significant fraction of the overall laser system cost, it is important to achieve sufficiently low price points for these components. At this time, the price target for tenth-of-akind IFE plant is $0.007/Watt for packaged devices. At this target level, the pumps account for approximately one third of the laser cost. The pump lasers should last for the life of the power plant, leading to a target component lifetime requirement of roughly 14 Ghosts, corresponding to a 30 year plant life and 15 Hz repetition rate. An attractive path forward involes pump operation at high output power levels, on a Watts-per-bar (Watts/chip) basis. This reduces the cost of pump power (price-per-Watt), since to first order the unit price does not increase with power/bar. The industry has seen a continual improvement in power output, with current 1 cm-wide bars emitting up to 500 W QCW (quasi-continuous wave). Increased power/bar also facilitates achieving high irradiance in the array plane. On the other hand, increased power implies greater heat loads and (possibly) higher current drive, which will require increased attention to thermal management and parasitic series resistance. Diode chips containing multiple p-n junctions and quantum wells (also called nanostack structures) may provide an additional approach to reduce the peak current.

Deri, R J

2011-01-03T23:59:59.000Z

427

Standard practice for radiologic examination of semiconductors and electronic components  

E-Print Network (OSTI)

1.1 This practice provides the minimum requirements for nondestructive radiologic examination of semiconductor devices, microelectronic devices, electromagnetic devices, electronic and electrical devices, and the materials used for construction of these items. 1.2 This practice covers the radiologic examination of these items to detect possible defective conditions within the sealed case, especially those resulting from sealing the lid to the case, and internal defects such as extraneous material (foreign objects), improper interconnecting wires, voids in the die attach material or in the glass (when sealing glass is used) or physical damage. 1.3 The values stated in inch-pound units are to be regarded as standard. No other units of measurement are included in this practice. 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the app...

American Society for Testing and Materials. Philadelphia

2009-01-01T23:59:59.000Z

428

System for characterizing semiconductor materials and photovoltaic devices through calibration  

DOE Patents (OSTI)

A method and apparatus are disclosed for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby. 44 figs.

Sopori, B.L.; Allen, L.C.; Marshall, C.; Murphy, R.C.; Marshall, T.

1998-05-26T23:59:59.000Z

429

Predicted Ultrafast Single Qubit Operations in Semiconductor Quantum Dots  

E-Print Network (OSTI)

Several recently proposed implementations of scalable quantum computation rely on the ability to manipulate the spin polarization of individual electrons in semiconductors. The most rapid single-spin-manipulation technique to date relies on the generation of an effective magnetic field via a spin-sensitive optical Stark effect. This approach has been used to split spin states in colloidal CdSe quantum dots and to manipulate ensembles of spins in ZnMnSe quantum wells with femtosecond optical pulses. Here we report that the process will produce a coherent rotation of spin in quantum dots containing a single electron. The calculated magnitude of the effective magnetic field depends on the dot bandgap and the strain. We predict that in InAs/InP dots, for reasonable experimental parameters, the magnitude of the rotation is sufficient and the intrinsic error is low enough for them to serve as elements of a quantum dot based quantum computer.

C. E. Pryor; M. E. Flatt

2002-11-25T23:59:59.000Z

430

Active RF Pulse Compression Using An Electrically Controlled Semiconductor Switch  

SciTech Connect

First we review the theory of active pulse compression systems using resonant delay lines. Then we describe the design of an electrically controlled semiconductor active switch. The switch comprises an active window and an overmoded waveguide three-port network. The active window is based on a four-inch silicon wafer which has 960 PIN diodes. These are spatially combined in an overmoded waveguide. We describe the philosophy and design methodology for the three-port network and the active window. We then present the results of using this device to compress 11.4 GHz RF signals with high compression ratios. We show how the system can be used with amplifier like sources, in which one can change the phase of the source by manipulating the input to the source. We also show how the active switch can be used to compress a pulse from an oscillator like sources, which is not possible with passive pulse compression systems.

Guo, Jiquan; Tantawi, Sami; /SLAC

2007-01-10T23:59:59.000Z

431

Methods of forming semiconductor devices and devices formed using such methods  

SciTech Connect

Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

Fox, Robert V; Rodriguez, Rene G; Pak, Joshua

2013-05-21T23:59:59.000Z

432

Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics  

DOE Patents (OSTI)

In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Rogers, John A. (Champaign, IL); Meitl, Matthew (Raleigh, NC); Sun, Yugang (Naperville, IL); Ko, Heung Cho (Urbana, IL); Carlson, Andrew (Urbana, IL); Choi, Won Mook (Champaign, IL); Stoykovich, Mark (Dover, NH); Jiang, Hanqing (Urbana, IL); Huang, Yonggang (Glencoe, IL); Nuzzo, Ralph G. (Champaign, IL); Lee, Keon Jae (Tokyo, JP); Zhu, Zhengtao (Rapid City, SD); Menard, Etienne (Durham, NC); Khang, Dahl-Young (Seoul, KR); Kan, Seong Jun (Daejeon, KR); Ahn, Jong Hyun (Suwon, KR); Kim, Hoon-sik (Champaign, IL)

2012-07-10T23:59:59.000Z

433

Understanding How Semiconductors Absorb Light | U.S. DOE Office of Science  

NLE Websites -- All DOE Office Websites (Extended Search)

How Semiconductors Absorb Light How Semiconductors Absorb Light Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » March 2013 Understanding How Semiconductors Absorb Light Advances in how we calculate optical properties of semiconductors shorten the path to improved solar cells and other optoelectronic devices. Print Text Size: A A A Subscribe FeedbackShare Page Click to enlarge photo. Enlarge Photo

434

Multivariable analysis of spectral measurements for the characterization of semiconductor processes  

E-Print Network (OSTI)

The availability of affordable and reliable optical sensor technology and the abundance of data that these sensors now provide have created new opportunities to better characterize and control semiconductor processes in ...

White, David A. (David Allan), 1966-

2001-01-01T23:59:59.000Z

435

Prediction of semiconductor band edge positions in aqueous environments from first principles  

E-Print Network (OSTI)

The ability to predict a semiconductor's band edge positions in solution is important for the design of water-splitting photocatalyst materials. In this paper, we introduce a first-principles method to compute the ...

Wu, Yabi

436

Semiconductor-based all-optical switching for optical time-division multiplexed networks  

E-Print Network (OSTI)

All-optical switching will likely be required for future optical networks operating at data rates which exceed electronic processing speeds. Switches utilizing nonlinearities in semiconductor optical amplifiers (SOA) are ...

Robinson, Bryan S. (Bryan Shawn), 1975-

2003-01-01T23:59:59.000Z

437

Atomic-scale properties of semiconductor heterostructures probed by scanning tunneling microscopy  

SciTech Connect

The engineering of advanced semiconductor heterostructure materials and devices requires a detailed understanding of, and control over, the structure and properties of semiconductor materials and devices at the atomic to nanometer scale. Cross-sectional scanning tunneling microscopy has emerged as a unique and powerful method to characterize structural morphology and electronic properties in semiconductor epitaxial layers and device structures at these length scales. The basic experimental techniques in cross-sectional scanning tunneling microscopy are described, and some representative applications to semiconductor heterostructure characterization drawn from recent investigations in the authors laboratory are discussed. Specifically, they describe some recent studies of InP/InAsP and InAsP/InAsSb heterostructures in which nanoscale compositional clustering has been observed and analyzed.

Yu, E.T.; Zuo, S.L.; Bi, W.G.; Tu, C.W. [Univ. of California, San Diego, La Jolla, CA (United States). Dept. of Electrical and Computer Engineering; Biefeld, R.M.; Allerman, A.A. [Sandia National Labs., Albuquerque, NM (United States)

1998-05-01T23:59:59.000Z

438

Program management systems for the semiconductor processing capital equipment supply chain  

E-Print Network (OSTI)

The Capital Equipment Procurement group of Intel Corporation is responsible for developing and procuring the semiconductor processing capital equipment that is used throughout all of the company's development and manufacturing ...

Chandler, Thomas B. (Thomas Brian), 1970-

2004-01-01T23:59:59.000Z

439

Colloidal semiconductor nanocrystals as nanoscale emissive probes in light emitting diodes and cell biology  

E-Print Network (OSTI)

This thesis employs colloidal semiconductor nanocrystals (NCs) as nanoscale emissive probes to investigate the physics of light emitting diodes (LEDs), as well as to unveil properties of cells that conventional imaging ...

Huang, Hao, Ph. D. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

440

Optical Probe for Semiconductor: Cooperative Research and Development Final Report, CRADA Number CRD-06-206  

DOE Green Energy (OSTI)

This CRADA involves development of a new semiconductor characterization tool, Optical Probe, which can be commercialized by GT Solar. GT Solar will participate in the design and testing of this instrument that will be developed under an IPP project.

Sopori, B.

2011-02-01T23:59:59.000Z

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Ge-on-Si Integrated Photonics: New Tricks from an Old Semiconductor  

E-Print Network (OSTI)

We review recent progress in Ge active photonic devices for electronic-photonic integration on Si, demonstrating new tricks in optoelectronics from this old semiconductor material used for the first transistor more than ...

Jifeng, Liu

442

Photocatalytic Oxidation of Aqueous Organic Contaminants by Semiconductors using Visible Light Radiation  

E-Print Network (OSTI)

· Continuously mixed Light Source · T5 8 watt florescent bulbs · "Daylight Spectrum" · Color Rendering Index 75Photocatalytic Oxidation of Aqueous Organic Contaminants by Semiconductors using Visible Light

Meyers, Steven D.

443

Singlet exciton fission, a multi-exciton generation process, in organic semiconductor solar cells  

E-Print Network (OSTI)

Organic semiconductor photovoltaics hold the promise of cheap production and low manufacturing setup costs. The highest efficiency seen in research labs, ~10% today, is still too low for production. In this work we explore ...

Jadhav, Priyadarshani

2012-01-01T23:59:59.000Z

444

Spectroscopy and external control of optical dynamics in single semiconductor nanocrystals  

E-Print Network (OSTI)

Single molecule spectroscopy has progressed substantially in the past ten years and the accompanying progress in the optical study of single semiconductor nanocrystals has opened a new dimension in our understanding of the ...

Shimizu, Kentaro, 1975-

2002-01-01T23:59:59.000Z

445

Development of New Building Blocks for Constructing Novel Polymer Semiconductors for Organic Thin Film Transistors.  

E-Print Network (OSTI)

??Organic semiconductors are envisioned to have widespread applications in flexible displays, radio-frequency identification (RFID) tags, bio- and chem-sensors, as well as organic solar cells. Polymer (more)

Yan, Zhuangqing

2013-01-01T23:59:59.000Z

446

Microwave frequency division and multiplication using an optically injected semiconductor laser  

E-Print Network (OSTI)

Senior Member of the IEEE Laser and Electro-Optics Society,modelocked semiconductor lasers, Electron. Lett. , vol. 36,recovery by a ?ber ring laser employing a linear optical

Chan, Sze-Chun; Liu, Jia-Ming

2005-01-01T23:59:59.000Z

447

Role of propagating ionisation fronts in semiconductor generation of sub-ps THz radiation  

E-Print Network (OSTI)

in standard semiconductor THz emitters may lead to identification of superior materials and excitation) 2806. [7] J.L. Oudar, D. Hulin, A. Migus, A. Antonetti, F. Alexandre, Phys. Rev. Lett. 55 (1985) 2074

Strathclyde, University of

448

Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology, 1st edition  

Science Conference Proceedings (OSTI)

A major current challenge for semiconductor devices is to develop materials for the next generation of optical communication systems and solar power conversion applications. Recently, extensive research has revealed that an introduction of only a few ...

Ayse Erol; Ayse Erol

2008-03-01T23:59:59.000Z

449

Semiconductor with protective surface coating and method of manufacture thereof. [Patent application  

DOE Patents (OSTI)

Passivation of predominantly crystalline semiconductor devices is provided for by a surface coating of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating of amorphous germanium onto the etched and quenched diode surface in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices, which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating compensates for pre-existing undesirable surface states as well as protecting the semiconductor device against future impregnation with impurities.

Hansen, W.L.; Haller, E.E.

1980-09-19T23:59:59.000Z

450

Simple method for surface selective adsorption of semiconductor nanocrystals with nanometric resolution  

Science Conference Proceedings (OSTI)

Self-assembly methods play a major role in many modern fabrication techniques for various nanotechnology applications. In this paper we demonstrate two alternatives for self-assembled patterning within the nanoscale resolution of optically active semiconductor ...

O. Koslovsky, S. Yochelis, N. Livneh, M. G. Harats, R. Rapaport, Y. Paltiel

2012-01-01T23:59:59.000Z

451

Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates  

DOE Patents (OSTI)

Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a substrate having a crystalline surface with a known lattice parameter (a). The method further includes growing a crystalline semiconductor layer on the crystalline substrate surface by coincident site lattice matched epitaxy, without any buffer layer between the crystalline semiconductor layer and the crystalline surface of the substrate. The crystalline semiconductor layer will be prepared to have a lattice parameter (a') that is related to the substrate lattice parameter (a). The lattice parameter (a') maybe related to the lattice parameter (a) by a scaling factor derived from a geometric relationship between the respective crystal lattices.

Norman, Andrew G; Ptak, Aaron J

2013-08-13T23:59:59.000Z

452

Electronic Properties of Disordered Organic Semiconductors via QM/MM Simulations  

E-Print Network (OSTI)

Organic semiconductors (OSCs) have recently received significant attention for their potential use in photovoltaic, light emitting diode, and field effect transistor devices. Part of the appeal of OSCs is the disordered, ...

Difley, Seth

453

Product strategy in response to technological innovation in the semiconductor test industry  

E-Print Network (OSTI)

After the market boom of 2000 in the semiconductor industry changed significantly. The changes included stricter limits on capital cost spending, and the increased propensity of the industry to outsource the manufacturing ...

Lin, Robert W. (Robert Wei-Pang), 1976-

2004-01-01T23:59:59.000Z

454

X-ray and photoelectron spectroscopy of the structure, reactivity, and electronic structure of semiconductor nanocrystals  

E-Print Network (OSTI)

Figure 2-5 FESEM of 60 CdSe nanocrystals on hexanedithiol/properties of semiconductor (CdSe, InAs) nanocrystals andCdSe)..

Hamad, Kimberly S.

2000-01-01T23:59:59.000Z

455

Dilute magnetic semiconductor Cu2FeSnS4 nanocrystals with a novel zincblende structure  

Science Conference Proceedings (OSTI)

Diluted magnetic semiconductor Cu2FeSnS4 nanocrystals with a novel zincblende structure have been successfully synthesized by a hot-injection approach. Cu+, Fe2+, and Sn4+ ions occupy the same position in the ...

Xiaolu Liang; Xianhua Wei; Daocheng Pan

2012-01-01T23:59:59.000Z

456

The physics and chemistry of semiconductor nanocrystals in sol-gel derived optical microcavities  

E-Print Network (OSTI)

The incorporation of semiconductor nanocrystals (NCs) into sol-gel derived matrices presents both novel applications as well as a robust platform in which to investigate the nonlinear optical properties of NCs. This thesis ...

Chan, Yinthai

2006-01-01T23:59:59.000Z

457

Physics and simulation of transport processes in hybrid organic semiconductor devices  

E-Print Network (OSTI)

Organic semiconductors and nanomaterials promise to potentially form the basis for future efficient and cost-effective large area optoelectronic devices, such as lightemitting diodes and solar cells. Although these materials' ...

Rousseau, Ian Michael

2010-01-01T23:59:59.000Z

458

BAs-GaAs Semiconductor Alloys as a Photovoltaic Alternative to Nitride Alloys  

DOE Green Energy (OSTI)

Nitrogen alloyed III-V semiconductor compounds have been intensely studied in recent years due to unusual effects caused by nitrogen alloying. These effects are exploited in band gap engineering for specific applications such as solar cells and blue lasers.

Hart, G. L. W.; Zunger, A.

2000-01-01T23:59:59.000Z

459

Semiconductors and sustainability : energy and materials use in integrated circuit manufacturing  

E-Print Network (OSTI)

Semiconductors have propelled an incredible revolution in the way we generate, access, store, and communicate information; the effects of this revolution have transformed culture, society, and the economy. At the same time, ...

Branham, Matthew S

2008-01-01T23:59:59.000Z

460

Substrate engineering for monolithic integration of III-V semiconductors with Si CMOS technology  

E-Print Network (OSTI)

Ge virtual substrates, fabricated using Si1-xGex-.Ge, compositionally graded buffers, enable the epitaxial growth of device-quality GaAs on Si substrates, but monolithic integration of III-V semiconductors with Si CMOS ...

Dohrman, Carl Lawrence

2008-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "dong yang semiconductor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Laboratory Thin-Film Encapsulation of Air-Sensitive Organic Semiconductor Devices  

E-Print Network (OSTI)

We present an approach, which is compatible with both glass and polymer substrates, to in-laboratory handling and intra-laboratory shipping of air-sensitive organic semiconductors. Encapsulation approaches are presented ...

Subbarao, Samuel P.

462

Integer programming-based real-time scheduler in semiconductor manufacturing  

Science Conference Proceedings (OSTI)

This paper demonstrates how an integer programming-based real-time scheduling heuristic approach can be applied for semiconductor manufacturing. Two integer programming formulations of a simplified version of this problem are proposed to model (1) a ...

Myoungsoo Ham; Young Hoon Lee; John W. Fowler

2009-12-01T23:59:59.000Z

463

Application of RFID on equipment parts readiness management system of semiconductor packaging plant  

Science Conference Proceedings (OSTI)

Management of equipment parts readiness for process setup adjustment to meet variable order requirements in a semiconductor packaging plant is crucial to the health of production lines and downtime avoidance. In order to improve the current equipment ...

Wei-Ling Wang; Chiao-Tzu Huang; Shu-Jen Wang; Chia-Pao Chang; Hui-Wen Liao

2013-01-01T23:59:59.000Z

464

An iterative method for single and vertically stacked semiconductor quantum dots simulation  

Science Conference Proceedings (OSTI)

We present in this paper a computational effective nonlinear iterative method for calculating the electron energy spectra in single and vertically stacked InAs/GaAs semiconductor quantum dots. The physical model problem is formulated with the effective ... Keywords: Coupling effect, Electronic structure, Energy spectra, Modelling and simulation, Multishift QR method, Nonlinear eigenvalue problem, Semiconductor nanostructure, Single quantum dot, Vertically stacked quantum dot, Wave function

Yiming Li

2005-10-01T23:59:59.000Z

465

Method for making graded I-III-VI.sub.2 semiconductors and solar cell obtained thereby  

DOE Patents (OSTI)

Improved cell photovoltaic conversion efficiencies are obtained by the simultaneous elemental reactive evaporation process of Mickelsen and Chen for making semiconductors by closer control of the evaporation rates and substrate temperature during formation of the near contact, bulk, and near junction regions of a graded I-III-VI.sub.2, thin film, semiconductor, such as CuInSe.sub.2 /(Zn,Cd)S or another I-III-VI.sub.2 /II-VI heterojunction.

Devaney, Walter E. (Seattle, WA)

1987-08-04T23:59:59.000Z

466

From semiconductor-semiconductor transition (42 K) to the highest- Tc organic superconductor,. kappa. -(ET) sub 2 Cu(N(CN) sub 2 )Cl ( Tc = 12. 5 K)  

Science Conference Proceedings (OSTI)

The discovery of an organic superconductor with the highest transition temperature (125 K) recorded following the suppression of a semiconductor-semiconductor transition (42 K) is reported. The reported compound is a kappa-phase superconductor, kappa-(ET){sub 2}Cu(N(CN){sub 2})Cl, which is isostructural with the recently prepared ambient-pressure superconductor kappa-(ET){sub 2}Cu(N(CN){sub 2})Br with a transition temperature of 11.5 K that has been previously reported. Band electronic structural calculations show the newly discovered compound to be a two-dimensional metal. 15 refs., 2 figs.

Williams, J.M.; Kini, A.M.; Wang, H.H.; Carlson, K.D.; Geiser, U.; Montgomery, L.K.; Pyrka, G.J.; Watkins, D.M.; Kommers, J.M.; Boryschuk, S.J.; Strieby Crouch, A.V.; Kwok, W.K. (Argonne National Lab., IL (USA)); Schirber, J.E.; Overmyer, D.L. (Sandia National Labs., Albuquerque, NM (USA)); Jung, D.; Whangbo, Myunghwan (North Carolina State Univ., Raleigh (USA))

1990-09-05T23:59:59.000Z

467

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer  

DOE Patents (OSTI)

A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

Spahn, Olga B. (Albuquerque, NM); Lear, Kevin L. (Albuquerque, NM)

1998-01-01T23:59:59.000Z

468

Chameleon: Color Transformation on OLED Displays Mian Dong, and Lin Zhong  

E-Print Network (OSTI)

. However, there is a great need for tools to automatically transform GUIs for power reduction. Firstly transformation can readily adapt them for power savings on OLED-based displays. Secondly, transformation tools includes two steps. In first step, chameleon transforms the colors of a given GUI to minimize the power

Zhong, Lin

469

Microsoft PowerPoint - DongHuang_ARMposter2008.ppt [Compatibility...  

NLE Websites -- All DOE Office Websites (Extended Search)

but still not enough when only a few sensors are available. Cloud radar complements to passive sensors, and can be used to further constrain the tomographic retrievals. Adding...

470

A Novel Class of High-TC Ferromagnetic Semiconductors  

SciTech Connect

We have grown single crystals of novel ruthenates (Sr,Ba)(Fe,Co){sub 2+x}Ru{sub 4-x}O{sub 11} that exhibit long-range ferromagnetic order well above room temperature, accompanied by narrow-gap semiconducting properties that include a large anomalous Hall conductance, low resistivity, high carrier concentration and low coercive field, which are properties well suited to spintronic applications. X-ray diffraction, EDX, neutron diffraction and x-ray absorption measurements on single crystals firmly establish the 'R-Type' hexagonal ferrite structure (space group P6{sub 3}/mmc, No 194) and single-phase nature of all samples. The electronic structure and physical properties can be tuned by simple chemical substitution of two elements, M = Fe or Co, or by varying the relative concentration of 3d solutes and 4d Ru. Our magnetotransport, x-ray magnetic circular dichroism and magnetic moment data suggest the mechanism for FM order is quite different from that governing known dilute magnetic semiconductors.

Shlyk, L. V.; Kryukov, S. A.; De Long, L. E.; Schupp-Niewa, B.; Niewa, R.; Lynn, J. W.; Huang, Qing; Arenholz, E.; Piamonteze, C.

2008-05-30T23:59:59.000Z

471

Optimal doping control of magnetic semiconductors via subsurfactant epitaxy  

SciTech Connect

Dilute magnetic semiconductors (DMS) with high ferromagnetic ordering temperatures (T{sub c}) have vast potential for advancing spin-based electronics or 'spintronics'. To date, achieving high-T{sub c} DMS typically required doping levels of order 5%. Such high doping levels inevitably compromise the structural homogeneity and carrier mobility of the DMS. Here, we establish 'subsurfactant epitaxy' as a novel kinetic pathway for synthesizing Mn-doped germanium with T{sub c} much higher than room temperature, at dramatically reduced doping levels. This is accomplished by optimal control of the diffusion kinetics of the dopant atoms near the growth front in two separate deposition steps. The first involves a submonolayer dose of Mn on Ge(100) at low temperature, which populates subsurface interstitial sites with Mn while suppressing lateral Mn diffusion and clustering. The second step involves epitaxial growth of Ge at elevated temperature, taking advantage of the strong floating ability of the interstitial Mn dopants towards the newly defined subsurface sites at the growth front. Most remarkably, the Mn dopants trapped inside the film are uniformly distributed at substitutional sites, and the resulting film exhibits ferromagnetism above 400 K at the nominal doping level of only 0.2%.

Zeng, Changgan [ORNL; Zhang, Zhenyu [ORNL; van Benthem, Klaus [ORNL; Chisholm, Matthew F [ORNL; Weitering, Harm H [ORNL

2008-01-01T23:59:59.000Z

472

Sputter deposition of semiconductor superlattices for thermoelectric applications  

DOE Green Energy (OSTI)

Theoretical dramatic improvement of the thermoelectric properties of materials by using quantum confinement in novel semiconductor nanostructures has lead to considerable interest in the thermoelectric community. Therefore, we are exploring the critical materials issues for fabrication of quantum confined structures by magnetron sputtering in the lead telluride and bismuth telluride families of materials. We have synthesized modulated structures from thermoelectric materials with bilayer periods of as little as 3.2 nm and shown that they are stable at deposition temperatures high enough to grow quality films. Issues critical to high quality film growth have been investigated such as nucleation and growth conditions and their effect on crystal orientation and growth morphology. These investigations show that nucleating the film at a temperature below the growth temperature of optimum electronic properties produces high quality films. Our work with sputter deposition, which is inherently a high rate deposition process, builds the technological base necessary to develop economical production of these advanced materials. High deposition rate is critical since, even if efficiencies comparable with CFC based refrigeration systems can be achieved, large quantities of quantum confined materials will be necessary for cost-competitive uses.

Wagner, A.V.; Foreman, R.J.; Farmer, J.C.; Barbee, T.W.

1996-11-01T23:59:59.000Z

473

Semiconductor grade, solar silicon purification project. Final technical report  

DOE Green Energy (OSTI)

Motorola's low cost poly silicon program is described. In the process, SiF/sub 4/, a low cost by-product is reacted with mg silicon to form SiF/sub 2/ gas which is polymerized. The (SiF/sub 2/)/sub x/ polymer is heated forming volatile Si/sub x/F/sub y/ homologues which disproportionate (C.V.D.) on a silicon particle bed forming silicon and SiF/sub 4/. During the initial phases of the investigation the silicon analysis procedure relied heavily on S.S.M.S. and E.S. analysis. This analysis demonstrated that major purification had occurred and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). However, more recent electrical analysis via crystal growth reveals that the product contains compensated phosphorus and boron. Work on the control or removal of the electrically active donors and acceptors could yield a product suitable for solar application. The low projected product cost and short energy payback time suggest that the economics of this process will result in a cost less than the J.P.L./D.O.E. goal of $10/Kg (1975 dollars). Finally, assuming a successful demonstration of a pilot facility, the process appears to be readily scalable to a major silicon purification facility as was proposed by Motorola and R. Katzen.

Ingle, W.M.; Rosler, R.S.; Thompson, S.W.; Chaney, R.E.

1979-12-10T23:59:59.000Z

474

Measuring Imputed Costs in the Semiconductor Equipment Supply Chain  

E-Print Network (OSTI)

We consider the order fulllment process of a customized capital equipment supplier. Prior to receiving a rm purchase order from the customer, the supplier receives a series of shared forecasts, which are called `soft orders'. Facing a stochastic internal manufacturing lead-time, the supplier must decide at what time to begin the fulllment of the order. This decision requires a trade-o between starting too early, leading to potential holding or cancellation cost, and the cost of starting too late, leading to potential loss of goodwill. We collect detailed data of shared forecasts, actual purchase orders, production lead-times, and delivery dates for a supplier-buyer dyad in the semiconductor equipment supply chain. Under the assumption that the supplier acts rationally, optimally balancing the cancellation, holding, and delay costs, we are able to estimate the corresponding cost parameters based on the observed data. Our estimation results suggest that the cost of cancellation is four times higher and the holding cost is two times higher than the delay cost. In other words, the supplier is very conservative when commencing the order fulllment, which negates the eectiveness of the overall forecast sharing mechanism. 1 1

Morris A. Cohen; Teck H. Ho; Justin Z. Ren; Christian Terwiesch

2001-01-01T23:59:59.000Z

475

Cluster Generation Under Pulsed Laser Ablation Of Compound Semiconductors  

SciTech Connect

A comparative experimental study of pulsed laser ablation in vacuum of two binary semiconductors, zinc oxide and indium phosphide, has been performed using IR- and visible laser pulses with particular attention to cluster generation. Neutral and cationic Zn{sub n}O{sub m} and In{sub n}P{sub m} particles of various stoichiometry have been produced and investigated by time-of-flight mass spectrometry. At ZnO ablation, large cationic (n>9) and all neutral clusters are mainly stoichiometric in the ablation plume. In contrast, indium phosphide clusters are strongly indium-rich with In{sub 4}P being a magic cluster. Analysis of the plume composition upon laser exposure has revealed congruent vaporization of ZnO and a disproportionate loss of phosphorus by the irradiated InP surface. Plume expansion conditions under ZnO ablation are shown to be favorable for stoichiometric cluster formation. A delayed vaporization of phosphorus under InP ablation has been observed that results in generation of off-stoichiometric clusters.

Bulgakov, Alexander V.; Evtushenko, Anton B.; Shukhov, Yuri G. [Institute of Thermophysics SB RAS, Lavrentyev Ave. 1, 630090 Novosibirsk (Russian Federation); Ozerov, Igor; Marine, Wladimir [Universite de la Mediterranee, CINaM, UPR CNRS 3118, 13288 Marseille (France)

2010-10-08T23:59:59.000Z

476

Utility-Scale Silicon Carbide Semiconductor: Monolithic Silicon Carbide Anode Switched Thyristor for Medium Voltage Power Conversion  

Science Conference Proceedings (OSTI)

ADEPT Project: GeneSiC is developing an advanced silicon-carbide (SiC)-based semiconductor called an anode-switched thyristor. This low-cost, compact SiC semiconductor conducts higher levels of electrical energy with better precision than traditional silicon semiconductors. This efficiency will enable a dramatic reduction in the size, weight, and volume of the power converters and electronic devices it's used in.GeneSiC is developing its SiC-based semiconductor for utility-scale power converters. Traditional silicon semiconductors can't process the high voltages that utility-scale power distribution requires, and they must be stacked in complicated circuits that require bulky insulation and cooling hardware. GeneSiC's semiconductors are well suited for high-power applications like large-scale renewable wind and solar energy installations.

None

2010-09-01T23:59:59.000Z

477

Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors  

SciTech Connect

A photovolatic device is described comprising: a light transmissive substrate; an electrically conductive, transparent layer disposed on the substrate as a first electrode; a layer of a first semiconductor disposed on the first electrode; a p-type thin film of a tellurium-containing II-VI semiconductor disposed on the first semiconductor to form a photoresponsive junction with it; and a second electrode contacting the thin film.

Szabo, L.F.; Biter, W.J.

1988-04-05T23:59:59.000Z

478

2 www.trnmag.com Technology Research News February 23/March 2, 2005 Process yields semiconductor foam  

E-Print Network (OSTI)

Wayne State University have made crystalline aerogels -- new semiconductor materials that are very porous, giving them very high surface areas. Unlike conventional aerogels, the researchers' materials

Ruina, Andy L.

479

Electrical Transport Through a Single Nanoscale SemiconductorBranch Point  

DOE Green Energy (OSTI)

Semiconductor tetrapods are three dimensional branched nanostructures, representing a new class of materials for electrical conduction. We employ the single electron transistor approach to investigate how charge carriers migrate through single nanoscale branch points of tetrapods. We find that carriers can delocalize across the branches or localize and hop between arms depending on their coupling strength. In addition, we demonstrate a new single-electron transistor operation scheme enabled by the multiple branched arms of a tetrapod: one arm can be used as a sensitive arm-gate to control the electrical transport through the whole system. Electrical transport through nanocrystals, molecules, nanowires and nanotubes display novel quantum phenomena. These can be studied using the single electron transistor approach to successively change the charge state by one, to reveal charging energies, electronic level spacings, and coupling between electronic, vibrational, and spin degrees of freedom. The advent of colloidal synthesis methods that produce branched nanostructures provides a new class of material which can act as conduits for electrical transport in hybrid organic-inorganic electrical devices such as light emitting diodes and solar cells. Already, the incorporation of branched nanostructures has yielded significant improvements in nanorod/polymer solar cells, where the specific pathways for charge migration can have a significant impact on device performance. Progress in this area requires an understanding of how electrons and holes migrate through individual branch points, for instance do charges delocalize across the branches or do they localize and hop between arms. Here we employ the single electron transistor approach to investigate the simplest three dimensional branched nanostructure, the semiconductor tetrapod, which consists of a pyramidal shaped zinc blende-structured ''core'' with four wurzite-structured arms projecting out at the tetrahedral angle. Monodisperse CdTe tetrapods with arms 8 nm in diameter and 150 nm in length were synthesized as previously reported. The tetrapods dispersed in toluene were deposited onto {approx}10 nm thick Si{sub 3}N{sub 4} dielectrics with alignment markers and a back gate (see Supporting Information). A tetrapod spontaneously orients with one arm pointing perpendicularly away from the substrate and three arms projecting down towards the surface. Individual 60 nm-thick Pd electrodes were placed by EBL onto each of the three arms downwards so that there are four terminals (three arms and a back gate) as shown schematically in Fig. 1 top inset. Figure 1 bottom inset shows a typical scanning electron micrograph (SEM) of the devices. The center brighter spot is due to the fourth arm pointing up away from the substrate although its controlled breaking is possible. The separation between the metal electrodes and the tetrapod branch point ranges from 30 to 80 nm in our devices. The devices were loaded into a He{sup 4}-flow cryostat for low-temperature ({approx}5K) electrical measurements.

Cui, Yi; Banin, Uri; Bjork, Mikael T.; Alivisatos, A. Paul

2005-06-09T23:59:59.000Z

480

Charge and Spin Transport in Dilute Magnetic Semiconductors  

SciTech Connect

This proposal to the DOE outlines a three-year plan of research in theoretical and computational condensed-matter physics, with the aim of developing a microscopic theory for charge and spin dynamics in disordered materials with magnetic impurities. Important representatives of this class of materials are the dilute magnetic semiconductors (DMS), which have attracted great attention as a promising basis for spintronics devices. There is an intense experimental effort underway to study the transport properties of ferromagnetic DMS such as (Ga,Mn)As, and a number of interesting features have emerged: negative magnetoresistance, anomalous Hall effect, non-Drude dynamical conductivity, and resistivity maxima at the Curie temperature. Available theories have been able to account for some of these features, but at present we are still far away from a systematic microscopic understanding of transport in DMS. We propose to address this challenge by developing a theory of charge and spin dynamics based on a combination of the memory-function formalism and time-dependent density functional theory. This approach will be capable of dealing with two important issues: (a) the strong degree of correlated disorder in DMS, close to the localization transition (which invalidates the usual relaxation-time approximation to the Boltzmann equation), (b) the essentially unknown role of dynamical many-body effects such as spin Coulomb drag. We will calculate static and dynamical conductivities in DMS as functions of magnetic order and carrier density, which will advance our understanding of recent transport and infrared absorption measurements. Furthermore, we will study collective plasmon excitations in DMS (3D, 2D and quantum wells), whose linewidths could constitute a new experimental probe of the correlation of disorder, many-body effects and charge and spin dynamics in these materials.

Ullrich, Carsten A.

2009-07-23T23:59:59.000Z

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481

Diluted magnetic semiconductor effects in Mn-implanted silicon carbide  

Science Conference Proceedings (OSTI)

Light transmission and Faraday rotation spectra measured at the temperature of 2 K were compared for silicon carbide single crystals of 4H polytype (4H-SiC), implanted with 3.8 x 10{sup 16} cm{sup -2} of Mn ions at the beam energy of 190 keV, and a control 4H-SiC single crystal sample, which was not implanted. Mn ion implantation led to the creation of a Mn-doped surface layer with the average Mn concentration of 10{sup 21} cm{sup -3} and a thickness of approximately 0.2 {mu}m. Transmission of light through the implanted crystal changed only slightly in comparison with the control sample, which however, corresponded to a relatively strong attenuation in the implanted layer. This was interpreted as a result of scattering, which emerges in the surface layer due to optical nonuniformities, created by the high energy ion irradiation. The presence of a thin Mn-ion-containing surface layer led, despite its small thickness, to noticeable changes in the sample Faraday rotation spectra. The estimated values of the Verdet constant for this layer were about three orders of magnitude larger and of opposite sign compared to the Verdet constant values of the undoped sample. Magnetic field dependencies of the Faraday rotation contribution from the implanted layer were found to be saturating functions, which points to a proportionality of the Faraday rotation to the magnetization of the paramagnetic Mn ion subsystem. Based on these findings we conclude that the Mn-implanted SiC layer exhibits magneto-optical properties typical of a diluted magnetic semiconductor. At the same time, no ferromagnetic ordering was observed in the studied (Si, Mn)C sample.

Komarov, A. V.; Ryabchenko, S. M. [Institute of Physics of the National Academy of Sciences of Ukraine, 46 Nauki Ave., Kiev 03028 (Ukraine); Los, A. V. [ISS Ltd., Semiconductors and Circuits Lab, 15 Bozhenko Street, Kiev 03680 (Ukraine); Freescale Semiconductor Ukraine LLC., 15 Bozhenko Street, Kiev 03680 (Ukraine); Romanenko, S. M. [ISS Ltd., Semiconductors and Circuits Lab, 15 Bozhenko Street, Kiev 03680 (Ukraine)

2011-04-15T23:59:59.000Z

482

Synthesis and Manipulation of Semiconductor Nanocrystals inMicrofluidic Reactors  

SciTech Connect

Microfluidic reactors are investigated as a mechanism tocontrol the growth of semiconductor nanocrystals and characterize thestructural evolution of colloidal quantum dots. Due to their shortdiffusion lengths, low thermal masses, and predictable fluid dynamics,microfluidic devices can be used to quickly and reproducibly alterreaction conditions such as concentration, temperature, and reactiontime, while allowing for rapid reagent mixing and productcharacterization. These features are particularly useful for colloidalnanocrystal reactions, which scale poorly and are difficult to controland characterize in bulk fluids. To demonstrate the capabilities ofnanoparticle microreactors, a size series of spherical CdSe nanocrystalswas synthesized at high temperature in a continuous-flow, microfabricatedglass reactor. Nanocrystal diameters are reproducibly controlled bysystematically altering reaction parameters such as the temperature,concentration, and reaction time. Microreactors with finer control overtemperature and reagent mixing were designed to synthesize nanoparticlesof different shapes, such as rods, tetrapods, and hollow shells. The twomajor challenges observed with continuous flow reactors are thedeposition of particles on channel walls and the broad distribution ofresidence times that result from laminar flow. To alleviate theseproblems, I designed and fabricated liquid-liquid segmented flowmicroreactors in which the reaction precursors are encapsulated inflowing droplets suspended in an immiscible carrier fluid. The synthesisof CdSe nanocrystals in such microreactors exhibited reduced depositionand residence time distributions while enabling the rapid screening aseries of samples isolated in nL droplets. Microfluidic reactors werealso designed to modify the composition of existing nanocrystals andcharacterize the kinetics of such reactions. The millisecond kinetics ofthe CdSe-to-Ag2Se nanocrystal cation exchange reaction are measured insitu with micro-X-ray Absorption Spectroscopy in silicon microreactorsspecifically designed for rapid mixing and time-resolved X-rayspectroscopy. These results demonstrate that microreactors are valuablefor controlling and characterizing a wide range of reactions in nLvolumes even when nanoscale particles, high temperatures, causticreagents, and rapid time scales are involved. These experiments providethe foundation for future microfluidic investigations into the mechanismsof nanocrystal growth, crystal phase evolution, and heterostructureassembly.

Chan, Emory Ming-Yue

2006-12-19T23:59:59.000Z

483

An investigation of corrosion in semiconductor bridge explosive devices.  

SciTech Connect

In the course of a failure investigation, corrosion of the lands was occasionally found in developmental lots of semiconductor bridge (SCB) detonators and igniters. Evidence was found in both detonators and igniters of the gold layer being deposited on top of a corroded aluminum layer, but inspection of additional dies from the same wafer did not reveal any more corroded parts. In some detonators, evidence was found that corrosion of the aluminum layer also happened after the gold was deposited. Moisture and chloride must both be present for aluminum to corrode. A likely source for chloride is the adhesive used to bond the die to the header. Inspection of other SCB devices, both recently manufactured and manufactured about ten years ago, found no evidence for corrosion even in devices that contained SCBs with aluminum lands and no gold. Several manufacturing defects were noted such as stains, gouges in the gold layer due to tooling, and porosity of the gold layer. Results of atmospheric corrosion experiments confirmed that devices with a porous gold layer over the aluminum layer are susceptible to extensive corrosion when both moisture and chlorine are present. The extent of corrosion depends on the level of chlorine contamination, and corrosion did not occur when only moisture was present. Elimination of the gold plating on the lands eliminated corrosion of the lands in these experiments. Some questions remain unanswered, but enough information was gathered to recommend changes to materials and procedures. A second lot of detonators was successfully built using aluminum SCBs, limiting the use of Ablebond{trademark} adhesive, increasing the rigor in controlling exposure to moisture, and adding inspection steps.

Klassen, Sandra Ellen; Sorensen, Neil Robert

2007-05-01T23:59:59.000Z

484

Production of films and powders for semiconductor device applications  

DOE Patents (OSTI)

A process is described for chemical bath deposition of selenide and sulfide salts as films and powders employable as precursors for the fabrication of solar cell devices. The films and powders include (1) Cu{sub x}Se{sub n}, wherein x=1--2 and n=1--3; (2) Cu{sub x}Ga{sub y}Se{sub n}, wherein x=1--2, y=0--1 and n=1--3; (3) Cu{sub x}In{sub y}Se{sub n}, wherein x=1--2.27, y=0.72--2 and n=1--3; (4) Cu{sub x}(InGa){sub y}Se{sub n}, wherein x=1--2.17, y=0.96--2 and n=1--3; (5) In{sub y}Se{sub n}, wherein y=1--2.3 and n=1--3; (6) Cu{sub x}S{sub n}, wherein x=1--2 and n=1--3; and (7) Cu{sub x}(InGa){sub y}(SeS){sub n}, wherein x=1--2, y=0.07--2 and n=0.663--3. A reaction vessel containing therein a substrate upon which will form one or more layers of semiconductor