Sample records for diode oled solid

  1. Organic Light-Emitting Diodes (OLEDs) and Optically-Detected Magnetic Resonance (ODMR) studies on organic materials

    SciTech Connect (OSTI)

    Cai, Min

    2011-11-30T23:59:59.000Z

    Organic semiconductors have evolved rapidly over the last decades and currently are considered as the next-generation technology for many applications, such as organic light-emitting diodes (OLEDs) in flat-panel displays (FPDs) and solid state lighting (SSL), and organic solar cells (OSCs) in clean renewable energy. This dissertation focuses mainly on OLEDs. Although the commercialization of the OLED technology in FPDs is growing and appears to be just around the corner for SSL, there are still several key issues that need to be addressed: (1) the cost of OLEDs is very high, largely due to the costly current manufacturing process; (2) the efficiency of OLEDs needs to be improved. This is vital to the success of OLEDs in the FPD and SSL industries; (3) the lifetime of OLEDs, especially blue OLEDs, is the biggest technical challenge. All these issues raise the demand for new organic materials, new device structures, and continued lower-cost fabrication methods. In an attempt to address these issues, we used solution-processing methods to fabricate highly efficient small molecule OLEDs (SMOLEDs); this approach is costeffective in comparison to the more common thermal vacuum evaporation. We also successfully made efficient indium tin oxide (ITO)-free SMOLEDs to further improve the efficiency of the OLEDs. We employed the spin-dependent optically-detected magnetic resonance (ODMR) technique to study the luminescence quenching processes in OLEDs and organic materials in order to understand the intrinsic degradation mechanisms. We also fabricated polymer LEDs (PLEDs) based on a new electron-accepting blue-emitting polymer and studied the effect of molecular weight on the efficiency of PLEDs. All these studies helped us to better understand the underlying relationship between the organic semiconductor materials and the OLEDs’ performance, and will subsequently assist in further enhancing the efficiency of OLEDs. With strongly improved device performance (in addition to other OLEDs' attributes such as mechanical flexibility and potential low cost), the OLED technology is promising to successfully compete with current technologies, such as LCDs and inorganic LEDs.

  2. Electroluminescence property of organic light emitting diode (OLED)

    SciTech Connect (OSTI)

    Özdemir, Orhan; Kavak, Pelin; Saatci, A. Evrim; Gökdemir, F. P?nar; Menda, U. Deneb; Can, Nursel; Kutlu, Kubilay [Y?ld?z Technical University, Department of Physics, Esenler, Istanbul (Turkey); Tekin, Emine; Pravadal?, Selin [National Metrology Inst?tute of Turkey (TUB?TAK-UME), Kocaeli (Turkey)

    2013-12-16T23:59:59.000Z

    Transport properties of electrons and holes were investigated not only in a anthracene-containing poly(p-phenylene-ethynylene)- alt - poly(p-phenylene-vinylene) (PPE-PPV) polymer (AnE-PVstat) light emitting diodes (OLED) but also in an ITO/Ag/polymer/Ag electron and ITO/PEDOT:PSS/polymer/Au hole only devices. Mobility of injected carriers followed the Poole-Frenkel type conduction mechanism and distinguished in the frequency range due to the difference of transit times in admittance measurement. Beginning of light output took place at the turn-on voltage (or flat band voltage), 1.8 V, which was the difference of energy band gap of polymer and two barrier offsets between metals and polymer.

  3. Organic light emitting diodes (OLEDS) and OLED-based structurally integrated optical sensors

    SciTech Connect (OSTI)

    Cai, Yuankun

    2010-05-16T23:59:59.000Z

    General introduction to OLED basics and OLED-based structurally integrated sensors was provided in chapter 1 and chapter 2. As discussed in chapter 3, OLEDs were developed or improved using novel engineering methods for better charge injection (increased by over 1 order of magnitude) and efficiency. As the excitation sources, these OLEDs have preferred characteristics for sensor applications, including narrowed emission, emission at desired wavelength, and enhanced output for reduced EL background, higher absorption and improved device lifetime. In addition to OLEDs with desired performance, sensor integration requires oxidase immobilization with the sensor film for O{sub 2}-based biological and chemical sensing. Nanoparticles such as ZnO have large surface area and high isoelectric point ({approx}9.5), which favors enzyme immobilization via physical adsorption as well as Coulombic bonding. In chapter 4, it was demonstrated that ZnO could be used for this purpose, although future work is needed to further bond the ZnO to the sensor film. In chapter 5, single unit sensor was extended to multianalyte parallel sensing based on an OLED platform, which is compact and integrated with silicon photodiodes and electronics. Lactate and glucose were simultaneously monitored with a low limit of detection 0.02 mM, fast response time ({approx} 1 minute) and dynamic range from 0-8.6 ppm of dissolved oxygen. As discovered in previous work, the dynamic range covers 0-100% gas phase O{sub 2} or 0-40 ppm dissolved oxygen at room temperature. PL decay curve, which is used to extract the decay time, is usually not a simple exponential at high O{sub 2} concentration, which indicates that O{sub 2} is not equally accessible for different luminescent sites. This creates a challenge for data analysis, which however was successfully processed by stretched exponential as shown in chapter 6. This also provides an insight about the distribution of O{sub 2}:dye collisional quenching rate due to microheterogeneity. Effect of TiO{sub 2} doping was also discussed. Stretched exponential analysis also generates calibration curves with higher sensitivity, which is preferred from the operational point of view. The work of enhanced integration was shown in chapter 7 with a polymer photodetector, which enables the preferred operation mode, decay time measurement, due to fast reponse (<20 {mu}s). Device thickness was enlarged for maximum absorption of the PL, which was realized by slow spincoating rate and shorter spincoating time. Film prepared this way shows more crystalline order by Raman spectra, probably due to slow evaporation. This also ensures charge transport is not affected even with a thick film as indicated in the response time. Combination of OLEDs and polymer photodetectors present opportunities for solution processed all-organic sensors, which enables cheap processing at large scale. Future development can focus on monolithically integration of OLEDs and organic photodetectors (OPD) on the same substrate at a small scale, which could be enabled by inkjet printing. As OLED and OPD technologies continue to advance, small-sized, flexible and all-organic structurally integrated sensor platforms will become true in the near future.

  4. Multi-Faceted Scientific Strategies Toward Better Solid-State Lighting of Phosphorescent OLEDs

    SciTech Connect (OSTI)

    Mohammad Omary; Bruce Gnade; Qi Wang; Oussama Elbjeirami; Chi Yang; Nigel Shepherd; Huiping Jia; Manuel Quevedo; Husam Alshareef; Minghang Li; Ming-Te Lin; Wei-Hsuan Chen; Iain Oswald; Pankaj Sinha; Ravi Arvapally; Usha Kaipa; John Determan; Sreekar Marpu; Roy McDougald; Gustavo Garza; Jason Halbert; Unnat Bhansali; Michael Perez

    2010-08-31T23:59:59.000Z

    This project has advanced solid-state lighting (SSL) by utilizing new phosphorescent systems for use in organic light-emitting diodes (OLEDs). The technical approach was two-fold: a) Targeted synthesis and screening of emitters designed to exhibit phosphorescence with maximized brightness in the solid state; and b) Construction and optimizing the performance of monochromatic and white OLEDs from the best new emitters to improve performance metrics versus the state of the art. The phosphorescent systems were screened candidates among a large variety of recentlysynthesized and newly-designed molecular and macromolecular metal-organic phosphors. The emitters and devices have been optimized to maximize light emission and color metrics, improve the long-term durability of emitters and devices, and reduce the manufacturing cost both by simplifying the process flow and by seeking less expensive device components than common ones. The project succeeded in all these goals upon comparison of the best materials and devices investigated vs. the state of the art of the technology.

  5. Apply: Solid-State Lighting Advanced Technology R&D - 2014(DE...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Through research and development of solid-state lighting (SSL),including both light-emitting diode (LED) and organic light emitting diode (OLED) technologies, the objectives of...

  6. Quantum Dot Light Enhancement Substrate for OLED Solid-State Lighting

    SciTech Connect (OSTI)

    James Perkins; Matthew Stevenson; Gagan Mahan; Seth Coe-Sullivan; Peter Kazlas

    2011-01-21T23:59:59.000Z

    With DOE Award No. DE-EE00000628, QD Vision developed and demonstrated a cost-competitive solution for increasing the light extraction efficiency of OLEDs with efficient and stable color rendering index (CRI) for solid state lighting (SSL). Solution processable quantum dot (QD) films were integrated into OLED ITO-glass substrates to generate tunable white emission from blue emitting OLED) devices as well as outcouple light from the ITO film. This QD light-enhancement substrate (QD-LED) technology demonstrated a 60% increase in OLED forward light out-coupling, a value which increases to 76% when considering total increase in multi-directional light output. The objective for the first year was an 80% increase in light output. This project seeks to develop and demonstrate a cost-competitive solution for realizing increased extraction efficiency organic light emitting devices (OLEDs) with efficient and stable color rendering index (CRI) for SSL. Solution processible quantum dot (QD) films will be utilized to generate tunable white emission from blue emitting phosphorescent OLED (Ph-OLED) devices.

  7. Permanent polarization and charge distribution in organic light-emitting diodes (OLEDs): Insights from near-infrared charge-modulation spectroscopy of an operating OLED

    SciTech Connect (OSTI)

    Marchetti, Alfred P.; Haskins, Terri L.; Young, Ralph H.; Rothberg, Lewis J. [Department of Chemistry, University of Rochester, Rochester, New York 14627 (United States)

    2014-03-21T23:59:59.000Z

    Vapor-deposited Alq{sub 3} layers typically possess a strong permanent electrical polarization, whereas NPB layers do not. (Alq{sub 3} is tris(8-quinolinolato)aluminum(III); NPB is 4,4?-bis[N-(1-naphthyl)-N-phenylamino]biphenyl.) The cause is a net orientation of the Alq{sub 3} molecules with their large dipole moments. Here we report on consequences for an organic light-emitting diode (OLED) with an NPB hole-transport layer and Alq{sub 3} electron-transport layer. The discontinuous polarization at the NPB|Alq{sub 3} interface has the same effect as a sheet of immobile negative charge there. It is more than compensated by a large concentration of injected holes (NPB{sup +}) when the OLED is running. We discuss the implications and consequences for the quantum efficiency and the drive voltage of this OLED and others. We also speculate on possible consequences of permanent polarization in organic photovoltaic devices. The concentration of NPB{sup +} was measured by charge-modulation spectroscopy (CMS) in the near infrared, where the NPB{sup +} has a strong absorption band, supplemented by differential-capacitance and current-voltage measurements. Unlike CMS in the visible, this method avoids complications from modulation of the electroluminescence and electroabsorption.

  8. Fabrication and Characterization of New Hybrid Organic Light Emitting Diode (OLED): Europium-picrate-triethylene oxide Complex

    SciTech Connect (OSTI)

    Sarjidan, M. A. Mohd; Abu Zakaria, N. Z. A.; Abd. Majid, W. H. [Solid State Research Laboratory, Department of Physics, University of Malaya, 50603, Kuala Lumpur (Malaysia); Kusrini, Eny; Saleh, M. I. [School of Chemical Sciences, Universiti Sains Malaysia, 11800 Penang (Malaysia)

    2009-07-07T23:59:59.000Z

    Thin-film light emitting devices based on organic materials have attracted vast interest in applications such as light emitting diode (LED) and flat-panel display. The organic material can be attached with inorganic material to enhance the performance of the light emitting device. A hybrid OLED based on a new complex of europium picrate (Eu-pic) with triethylene oxide (EO3) ligand is fabricated. The OLED is fabricated by using spin coating technique with acetone as the solvent and aluminum as the top electrode. The optical, photoluminescence (PL) and electrical properties of the sample are carried out by UV-Vis spectroscopy (Jasco V-750), luminescence spectroscopy (Perkin Elmer LS-500) and source measure unit (SMU)(Keithly), respectively.

  9. Soft lithography microlens fabrication and array for enhanced light extraction from organic light emitting diodes (OLEDs)

    SciTech Connect (OSTI)

    Leung, Wai Y.; Park, Joong-Mok; Gan, Zhengqing; Constant, Kristen P.; Shinar, Joseph; Shinar, Ruth; ho, Kai-Ming

    2014-06-03T23:59:59.000Z

    Provided are microlens arrays for use on the substrate of OLEDs to extract more light that is trapped in waveguided modes inside the devices and methods of manufacturing same. Light extraction with microlens arrays is not limited to the light emitting area, but is also efficient in extracting light from the whole microlens patterned area where waveguiding occurs. Large microlens array, compared to the size of the light emitting area, extract more light and result in over 100% enhancement. Such a microlens array is not limited to (O)LEDs of specific emission, configuration, pixel size, or pixel shape. It is suitable for all colors, including white, for microcavity OLEDs, and OLEDs fabricated directly on the (modified) microlens array.

  10. Enhanced performance of organic light-emitting diodes (OLEDs) and OLED-based photoluminescent sensing platforms by novel microstructures and device architectures

    SciTech Connect (OSTI)

    Liu, Rui [Ames Laboratory

    2012-08-01T23:59:59.000Z

    After a general introduction to OLEDs and OLED-based PL sensors, the transient emission mechanism of guest-host OLEDs is described both experimentally and theoretically. A monolithic and easy-to-apply process is demonstrated for fabricating multicolor microcavity OLEDs (that improve the sensor platform). The outcoupling issues of OLEDs at the substrate/air interface are addressed by using a microstructured polymer film resulting from a PS and polyethylene glycol (PEG) mixture. Based on the understanding of OLEDs and their improvement, research was done in order to realize integrated all organic-based O{sub 2} and pH sensors with improved signal intensity and sensitivity. The sensor design modification and optimization are summarized

  11. Solid-State lighting ReSeaRch & development at Sandia national laboRatoRieS

    E-Print Network [OSTI]

    &d Technology snapshoT SSL uses inorganic or organic light-emitting diodes (LEDs or OLEDs)--which are solid

  12. 2014 OLED Stakeholder Meeting Report

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... 16 1 1. Introduction The 2014 Organic Light Emitting Diode (OLED) Stakeholder Meeting was convened by the U.S. Department of Energy (DOE)...

  13. Modifying the organic/electrode interface in Organic Solar Cells (OSCs) and improving the efficiency of solution-processed phosphorescent Organic Light-Emitting Diodes (OLEDs)

    SciTech Connect (OSTI)

    Xiao, Teng

    2012-04-27T23:59:59.000Z

    Organic semiconductors devices, such as, organic solar cells (OSCs), organic light-emitting diodes (OLEDs) and organic field-effect transistors (OFETs) have drawn increasing interest in recent decades. As organic materials are flexible, light weight, and potentially low-cost, organic semiconductor devices are considered to be an alternative to their inorganic counterparts. This dissertation will focus mainly on OSCs and OLEDs. As a clean and renewable energy source, the development of OSCs is very promising. Cells with 9.2% power conversion efficiency (PCE) were reported this year, compared to < 8% two years ago. OSCs belong to the so-called third generation solar cells and are still under development. While OLEDs are a more mature and better studied field, with commercial products already launched in the market, there are still several key issues: (1) the cost of OSCs/OLEDs is still high, largely due to the costly manufacturing processes; (2) the efficiency of OSCs/OLEDs needs to be improved; (3) the lifetime of OSCs/OLEDs is not sufficient compared to their inorganic counterparts; (4) the physics models of the behavior of the devices are not satisfactory. All these limitations invoke the demand for new organic materials, improved device architectures, low-cost fabrication methods, and better understanding of device physics. For OSCs, we attempted to improve the PCE by modifying the interlayer between active layer/metal. We found that ethylene glycol (EG) treated poly(3,4-ethylenedioxythiophene): polystyrenesulfonate (PEDOT: PSS) improves hole collection at the metal/polymer interface, furthermore it also affects the growth of the poly(3- hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM) blends, making the phase segregation more favorable for charge collection. We then studied organic/inorganic tandem cells. We also investigated the effect of a thin LiF layer on the hole-collection of copper phthalocyanine (CuPc)/C70-based small molecular OSCs. A thin LiF layer serves typically as the electron injection layer in OLEDs and electron collection interlayer in the OSCs. However, several reports showed that it can also assist in holeinjection in OLEDs. Here we first demonstrate that it assists hole-collection in OSCs, which is more obvious after air-plasma treatment, and explore this intriguing dual role. For OLEDs, we focus on solution processing methods to fabricate highly efficient phosphorescent OLEDs. First, we investigated OLEDs with a polymer host matrix, and enhanced charge injection by adding hole- and electron-transport materials into the system. We also applied a hole-blocking and electron-transport material to prevent luminescence quenching by the cathode. Finally, we substituted the polymer host by a small molecule, to achieve more efficient solution processed small molecular OLEDs (SMOLEDs); this approach is cost-effective in comparison to the more common vacuum thermal evaporation. All these studies help us to better understand the underlying relationship between the organic semiconductor materials and the OSCs and OLEDs’ performance and will subsequently assist in further enhancing the efficiencies of OSCs and OLEDs. With better efficiency and longer lifetime, the OSCs and OLEDs will be competitive with their inorganic counterparts.

  14. Chameleon: Color Transformation on OLED Displays Mian Dong, and Lin Zhong

    E-Print Network [OSTI]

    Zhong, Lin

    system energy consumers in mobile systems. Emerging organic light-emitting diode (OLED)-based displays

  15. Text-Alternative Version: Challenges in OLED Research and Development

    Broader source: Energy.gov [DOE]

    Narrator: Organic light-emitting diodes, OLEDs, are made using organic carbon-based materials. Unlike LEDs, which are small point light sources, OLEDs are made in sheets that create diffuse area...

  16. GreenVis: Energy-Saving Color Schemes for Sequential Data Visualization on OLED Displays

    E-Print Network [OSTI]

    North Virginia Tech Blacksburg, VA north@cs.vt.edu ABSTRACT The organic light emitting diode (OLED, Color Scheme, Visualization 1. INTRODUCTION The organic light-emitting diode (OLED) display is an emerg

  17. Power-Saving Color Transformation of Mobile Graphical User Interfaces on OLED-based Displays

    E-Print Network [OSTI]

    Zhong, Lin

    , Houston, TX 77025 {dongmian, ykc1,lzhong}@rice.edu ABSTRACT Emerging organic light-emitting diode (OLED of the display content or GUI design [1]. In contrast, emerging organic light-emitting diode (OLED

  18. Chameleon: A Color-Adaptive Web Browser for Mobile OLED Displays

    E-Print Network [OSTI]

    Zhong, Lin

    }@rice.edu ABSTRACT Displays based on organic light-emitting diode (OLED) technology are appearing on many mobile

  19. High brightness diode-pumped organic solid-state laser

    E-Print Network [OSTI]

    Zhao, Zhuang; Nafa, Malik; Chénais, Sébastien; Forget, Sébastien

    2015-01-01T23:59:59.000Z

    High-power, diffraction-limited organic solid-state laser operation has been achieved in a vertical external cavity surface-emitting organic laser (VECSOL), pumped by a low-cost compact blue laser diode. The diode-pumped VECSOLs were demonstrated with various dyes in a polymer matrix, leading to laser emissions from 540 nm to 660 nm. Optimization of both the pump pulse duration and output coupling leads to a pump slope efficiency of 11% for a DCM based VECSOLs. We report output pulse energy up to 280 nJ with 100 ns long pump pulses, leading to a peak power of 3.5 W in a circularly symmetric, diffraction-limited beam.

  20. High-average-power, diode-pumped solid state lasers for energy and industrial applications

    SciTech Connect (OSTI)

    Krupke, W.F.

    1994-03-02T23:59:59.000Z

    Progress at LLNL in the development high-average-power diode-pumped solid state lasers is summarized, including the development of enabling technologies.

  1. Power Modeling of Graphical User Interfaces on OLED Mian Dong Yung-Seok Kevin Choi Lin Zhong

    E-Print Network [OSTI]

    Zhong, Lin

    1,lzhong}@rice.edu ABSTRACT Emerging organic light-emitting diode (OLED)-based displays obviate light-emitting diode (OLED)-based displays [5] is highly dependent on the display content because

  2. Series connected OLED structure and fabrication method

    DOE Patents [OSTI]

    Foust, Donald Franklin; Balch, Ernest Wayne; Duggal, Anil Raj; Heller, Christian Maria; Guida, Renato; Nealon, William Francis; Faircloth, Tami Janene

    2006-05-23T23:59:59.000Z

    A light emitting device comprises a plurality of organic light emitting diode (OLED) modules. The OLED modules are arranged into a series group where the individual OLED modules are electrically connected in series. The device is configured to be coupled to a power supply. A display is also provided. The display includes a plurality of OLED modules arranged to depict a shape selected from the group consisting of at least one letter, at least one number, at least one image, and a combination thereof.

  3. Fabrication of the ZnO thin films using wet-chemical etching processes on application for organic light emitting diode (OLED) devices

    E-Print Network [OSTI]

    Boo, Jin-Hyo

    - sively used in solar cells, touch panels, heat mirrors, organic electro- luminescence devices (OLED), for example, has been commercially used in OLEDs. However, because of the cost and the scarcity of indium reactants and produce new species. Wet-chemical etching has great advantages such as low cost

  4. Fabrication of the ZnO thin films using wet-chemical etching processes on application for organic light emitting diode (OLED) devices

    E-Print Network [OSTI]

    Hong, Byungyou

    - sively used in solar cells, touch panels, heat mirrors, organic electro- luminescence devices (OLED- chemical etching behaviors of ZnO films were also investigated using various chemicals. In order

  5. OLED area illumination source

    DOE Patents [OSTI]

    Foust, Donald Franklin (Scotia, NY); Duggal, Anil Raj (Niskayuna, NY); Shiang, Joseph John (Niskayuna, NY); Nealon, William Francis (Gloversville, NY); Bortscheller, Jacob Charles (Clifton Park, NY)

    2008-03-25T23:59:59.000Z

    The present invention relates to an area illumination light source comprising a plurality of individual OLED panels. The individual OLED panels are configured in a physically modular fashion. Each OLED panel comprising a plurality of OLED devices. Each OLED panel comprises a first electrode and a second electrode such that the power being supplied to each individual OLED panel may be varied independently. A power supply unit capable of delivering varying levels of voltage simultaneously to the first and second electrodes of each of the individual OLED panels is also provided. The area illumination light source also comprises a mount within which the OLED panels are arrayed.

  6. OLED devices

    DOE Patents [OSTI]

    Sapochak, Linda Susan [Arlington, VA; Burrows, Paul Edward [Kennewick, WA; Bimalchandra, Asanga [Richland, WA

    2011-02-22T23:59:59.000Z

    An OLED device having an emission layer formed of an ambipolar phosphine oxide host material and a dopant, a hole transport layer in electrical communication with an anode, an electron transport layer in communication with a cathode, wherein the HOMO energy of the hole transport layer is substantially the same as the HOMO energy of the ambipolar host in the emission layer, and the LUMO energy of the electron transport layer is substantially the same as the LUMO energy of the ambipolar host in the emission layer.

  7. Record External Quantum Efficiency in Blue OLED Device

    Broader source: Energy.gov [DOE]

    Scientists at Pacific Northwest National Laboratory (PNNL) have created a blue organic light emitting diode (OLED) with an external quantum efficiency (EQE) of 11% at 800 cd/m2, exceeding their previous record EQE of 8%. The EQE of blue OLEDs is a major challenge in OLED technology development. This achievement is particularly notable since it was accomplished at a much lower operating voltage (6.2V) than previous demonstrations using similar structures, revealing the potential for much higher power efficiencies.

  8. Light-Emitting Diodes in the Solid-State Lighting Systems

    E-Print Network [OSTI]

    Sparavigna, Amelia Carolina

    2014-01-01T23:59:59.000Z

    Red and green light-emitting diodes (LEDs) had been produced for several decades before blue emitting diodes, suitable for lighting applications, were widely available. Today, we have the possibility of combining the three fundamental colours to have a bright white light. And therefore, a new form of lighting, the solid-state lighting, has now become a reality. Here we discuss LEDs and some of their applications in displays and lamps.

  9. OLED Stakeholder Meeting Report | Department of Energy

    Energy Savers [EERE]

    Report OLED Stakeholder Meeting Report.pdf More Documents & Publications 2015 Project Portfolio 2015 SSL R&D WORKSHOP PRESENTATIONS - DAY 2 Solid-State Lighting R&D...

  10. Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

    SciTech Connect (OSTI)

    Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.

    1994-01-01T23:59:59.000Z

    The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL`s). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL`s which are appropriate for material processing applications, low and intermediate average power DPSSL`s are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications.

  11. Mode-locked solid state lasers using diode laser excitation

    DOE Patents [OSTI]

    Holtom, Gary R. (Boston, MA)

    2012-03-06T23:59:59.000Z

    A mode-locked laser employs a coupled-polarization scheme for efficient longitudinal pumping by reshaped laser diode bars. One or more dielectric polarizers are configured to reflect a pumping wavelength having a first polarization and to reflect a lasing wavelength having a second polarization. An asymmetric cavity provides relatively large beam spot sizes in gain medium to permit efficient coupling to a volume pumped by a laser diode bar. The cavity can include a collimation region with a controlled beam spot size for insertion of a saturable absorber and dispersion components. Beam spot size is selected to provide stable mode locking based on Kerr lensing. Pulse durations of less than 100 fs can be achieved in Yb:KGW.

  12. Polarization methods for diode laser excitation of solid state lasers

    DOE Patents [OSTI]

    Holtom, Gary R. (Richland, WA)

    2008-11-25T23:59:59.000Z

    A mode-locked laser employs a coupled-polarization scheme for efficient longitudinal pumping by reshaped laser diode bars. One or more dielectric polarizers are configured to reflect a pumping wavelength having a first polarization and to reflect a lasing wavelength having a second polarization. A Yb-doped gain medium can be used that absorbs light having a first polarization and emits light having a second polarization. Using such pumping with laser cavity dispersion control, pulse durations of less than 100 fs can be achieved.

  13. Enhancement of Barrier Properties Using Ultrathin Hybrid Passivation Layer for Organic Light Emitting Diodes

    E-Print Network [OSTI]

    Hwang, Sung Woo

    acrylate layer and MS-31 (MgO : SiO2 ¼ 3 : 1 wt %) layer was adopted in organic light emitting diode (OLED the penetrations of oxygen and moisture. [DOI: 10.1143/JJAP.45.5970] KEYWORDS: organic light emitting diode (OLED. Introduction As a next generation display, the organic light emitting diode (OLED) has to great performances

  14. New Efficiency Record Achieved for White OLED Device

    Broader source: Energy.gov [DOE]

    Osram Opto-Semiconductors, Inc. has successfully demonstrated a white organic light emitting diode (OLED) with a record efficiency of 25 lumens per watt, the highest known efficiency achieved to date for a polymer-based white OLED. The 25 LPW cool-white-emitting device was produced by applying a standard external inorganic phosphor to Osram's record-breaking blue-emitting phosphorescent polymer device with a peak luminous efficacy of 14 LPW.

  15. World Record White OLED Performance Exceeds 100 lm/W

    Broader source: Energy.gov [DOE]

    Universal Display Corporation (UDC) has successfully demonstrated a record-breaking white organic light-emitting diode (WOLED) with a power efficacy of 102 lm/W at 1000 cd/m2 using its proprietary, high-efficiency phosphorescent OLED technology. This achievement represents a significant milestone for OLED technology, demonstrating performance that surpasses the power efficacy of incandescent bulbs with less than 15 lm/W and fluorescent lamps at 60-90 lm/W. Funded in part by DOE, UDC's achievement is a major step toward DOE's roadmap goal of a 150 lm/W commercial OLED light source by 2015.

  16. Compact and efficient method of RGB to RGBW data conversion for OLED microdisplays 

    E-Print Network [OSTI]

    Can, Chi

    2012-06-25T23:59:59.000Z

    Colour Electronic Information Displays (EIDs) typically consist of pixels that are made up of red, green and blue (RGB) subpixels. A recent technology, Organic Light Emitting Diode (OLED), offers the potential to create ...

  17. My Favorite OLED Panel

    Energy Savers [EERE]

    My Favorite OLED Panel Basar Erdener Sun and Snow Photo Courtesy 2009-2015 Kvikken 2 Sizable 3 Sizable Photo Courtesy Printmeneer on Etsy 4 5 Shapeable Photo Courtesy Dia...

  18. Design of interferometer system for Keda Torus eXperiment using terahertz solid-state diode sources

    SciTech Connect (OSTI)

    Xie, Jinlin, E-mail: jlxie@ustc.edu.cn; Wang, Haibo; Li, Hong; Lan, Tao; Liu, Adi; Liu, Wandong; Yu, Changxuan [School of Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Ding, Weixing [School of Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China); University of California-Los Angeles, P. O. Box 957099, Los Angeles, California 90095-7099 (United States)

    2014-11-15T23:59:59.000Z

    A solid-state source based terahertz (THz) interferometer diagnostic system has been designed and characterized for the Keda Torus eXperiment (KTX). The THz interferometer utilizes the planar diodes based frequency multiplier (X48) to provide the probing beam at fixed frequency 0.650 THz, and local oscillator is provided by an independent solid-state diode source with tunable frequency (0.650 THz +/? 10 MHz). Both solid-state sources have approximately 1 mW power. The planar-diode mixers optimized for high sensitivity, ?750 mV/mW, are used in the heterodyne detection system, which permits multichannel interferometer on KTX with a low phase noise. A sensitivity of {sub min} = 4.5 × 10{sup 16} m{sup ?2} and a temporal resolution of 0.2 ?s have been achieved during the initial bench test.

  19. High-Performance Organic Light-Emitting Diodes Using ITO

    E-Print Network [OSTI]

    Ho, Seng-Tiong

    High-Performance Organic Light-Emitting Diodes Using ITO Anodes Grown on Plastic by Room,* Mark E. Madsen, Antonio DiVenere, and Seng-Tiong Ho Organic light-emitting diodes (OLEDs) fabricated

  20. Solid-state lighting technology perspective.

    SciTech Connect (OSTI)

    Tsao, Jeffrey Yeenien; Coltrin, Michael Elliott

    2006-08-01T23:59:59.000Z

    Solid-State Lighting (SSL) uses inorganic light-emitting diodes (LEDs) and organic light-emitting diodes (OLEDs) to convert electricity into light for illumination. SSL has the potential for enormous energy savings and accompanying environmental benefits if its promise of 50% (or greater) energy efficiencies can be achieved. This report provides a broad summary of the technologies that underlie SSL. The applications for SSL and potential impact on U.S. and world-wide energy consumption, and impact on the human visual experience are discussed. The properties of visible light and different technical metrics to characterize its properties are summarized. The many factors contributing to the capital and operating costs for SSL and traditional lighting sources (incandescent, fluorescent, and high-intensity discharge lamps) are discussed, with extrapolations for future SSL goals. The technologies underlying LEDs and OLEDs are also described, including current and possible alternative future technologies and some of the present limitations.

  1. Nanostructured High Performance Ultraviolet and Blue Light Emitting Diodes for Solid State Lighting

    SciTech Connect (OSTI)

    Arto V. Nurmikko; Jung Han

    2005-09-30T23:59:59.000Z

    We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and near ultraviolet for Solid State Lighting applications. Accomplishments in the second 12 month contract period include (i) new means of synthesizing AlGaN and InN quantum dots by droplet heteroepitaxy, (ii) synthesis of AlGaInN nanowires as building blocks for GaN-based microcavity devices, (iii) progress towards direct epitaxial alignment of the dense arrays of nanowires, (iv) observation and measurements of stimulated emission in dense InGaN nanopost arrays, (v) design and fabrication of InGaN photonic crystal emitters, and (vi) observation and measurements of enhanced fluorescence from coupled quantum dot and plasmonic nanostructures. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

  2. NANOSTRUCTURED HIGH PERFORMANCE ULTRAVIOLET AND BLUE LIGHT EMITTING DIODES FOR SOLID STATE LIGHTING

    SciTech Connect (OSTI)

    Arto V. Nurmikko; Jung Han

    2004-10-01T23:59:59.000Z

    We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and near ultraviolet for Solid State Lighting applications. Accomplishments in the first 12 month contract period include (1) new means of synthesizing zero- and one-dimensional GaN nanostructures, (2) establishment of the building blocks for making GaN-based microcavity devices, and (3) demonstration of top-down approach to nano-scale photonic devices for enhanced spontaneous emission and light extraction. These include a demonstration of eight-fold enhancement of the external emission efficiency in new InGaN QW photonic crystal structures. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

  3. algainp light-emitting diodes: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    materials for different organic layers, which compose the standard organic light emitting diode (OLED) architecture.; Chapter one introduces (more) Borek, Carsten 2008-01-01...

  4. Numerical analysis of nanostructures for enhanced light extraction from OLEDs

    E-Print Network [OSTI]

    Zschiedrich, L; Burger, S; Schmidt, F; 10.1117/12.2001132

    2013-01-01T23:59:59.000Z

    Nanostructures, like periodic arrays of scatters or low-index gratings, are used to improve the light outcoupling from organic light-emitting diodes (OLED). In order to optimize geometrical and material properties of such structures, simulations of the outcoupling process are very helpful. The finite element method is best suited for an accurate discretization of the geometry and the singular-like field profile within the structured layer and the emitting layer. However, a finite element simulation of the overall OLED stack is often beyond available computer resources. The main focus of this paper is the simulation of a single dipole source embedded into a twofold infinitely periodic OLED structure. To overcome the numerical burden we apply the Floquet transform, so that the computational domain reduces to the unit cell. The relevant outcoupling data are then gained by inverse Flouqet transforming. This step requires a careful numerical treatment as reported in this paper.

  5. Interface electronic structures of organic light-emitting diodes with WO3 interlayer: A study by photoelectron spectroscopy

    E-Print Network [OSTI]

    Kim, Sehun

    Interface electronic structures of organic light-emitting diodes with WO3 interlayer: A study injec- tion and transport layers in an organic light-emitting diode (OLED) structure has been studied B.V. All rights reserved. 1. Introduction OLEDs (organic light-emitting diodes) are display de

  6. Precision Micron Hole Drilling using a Frequency Doubled, Diode Pumped Solid State Laser

    SciTech Connect (OSTI)

    Friedman, H W; Pierce, E L

    2004-04-21T23:59:59.000Z

    This work represents the second phase of a program to demonstrate precision laser drilling with minimal Heat Affected Zone. The technique uses a Diode Pumped Solid State Laser with two wavelengths and two modes of operation. The fundamental mode of the DPSSL at 1.06 microns is used to drill a hole with a diameter of a fraction of a millimeter diameter in a millimeter thick substrate quickly, but with low precision. This hole is then machined to precision dimensions using the second harmonic of the DPSSL Laser at 532 nm using a trepanning technique. Both lasers operate in the ablative mode with peak powers at or above a giga-watt per square centimeter and pulse durations in the 80 - 100 ns range. Under these conditions, the thermal diffusion distance is of the order of a micron or less and that fact coupled with the ablative nature of the process results in little or no HAZ (heat affected zone). With no HAZ, there isn't any change in the crystalline structure surrounding the hole and the strength of the substrate is maintained. Applications for these precision holes include cooling passages in turbine blades, ports for diesel injectors, suction holes for boundary layer control on wings and holes for dies in precision extrusion processes.

  7. Achieving Record Efficiency for Blue OLEDs by Controlling the Charge Balance

    Broader source: Energy.gov [DOE]

    Researchers at the University of Florida (UF) have demonstrated a blue phosphorescent organic light-emitting diode (OLED) with a peak power efficiency of 50 lm/W and an external quantum efficiency exceeding 20 percent at a luminance of 1,000 cd/m2, using no external light extraction techniques. This accomplishment is believed to be the world record in blue OLED efficiency.

  8. UDC Demonstrates Phosphorescent OLED Systems

    Broader source: Energy.gov [DOE]

    Universal Display Corporation (UDC), along with project partners Armstrong World Industries and the universities of Michigan and Southern California, have successfully demonstrated two phosphorescent OLED (PHOLED™) luminaire systems, the first of their kind in the U.S. This achievement marks a critical step in the development of practical OLED lighting in a complete luminaire system, including decorative housing, power supply, mounting, and maintenance provisions. Each luminaire has overall dimensions of approximately 15x60 cm and is comprised of four 15x15 cm phosphorescent OLED panels. With a combined power supply and lamp efficacy of 51 lm/W, the prototype luminaire is about twice as efficient as the market-leading halogen-based systems. In addition, the prototype OLED lighting system snaps into Armstrong's TechZone™ Ceiling System, which is commercially available in the U.S.x

  9. White organic light-emitting diodes: Status and perspective

    E-Print Network [OSTI]

    Reineke, Sebastian

    White organic light-emitting diodes (OLEDs) are ultrathin, large-area light sources made from organic semiconductor materials. Over the past decades, much research has been spent on finding suitable materials to realize ...

  10. Enhancing the emission directionality of organic light-emitting diodes by using photonic microstructures

    SciTech Connect (OSTI)

    Zhang, Shuyu; Turnbull, Graham A., E-mail: gat@st-andrews.ac.uk, E-mail: idws@st-andrews.ac.uk; Samuel, Ifor D. W., E-mail: gat@st-andrews.ac.uk, E-mail: idws@st-andrews.ac.uk [Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, Fife KY16 9SS (United Kingdom)] [Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, Fife KY16 9SS (United Kingdom)

    2013-11-18T23:59:59.000Z

    We report microstructured organic light-emitting diodes (OLEDs) with directional emission based on efficient solution-processable europium-OLEDs patterned by solvent assisted microcontact molding. The angle dependence of the light emission is characterized for OLEDs with square-array photonic crystals with periods between 275?nm and 335?nm. The microstructured devices have emission patterns strongly modified from the Lambertian emission of planar OLEDs and can approximately double the emitted power in a desired angle range in both s- and p-polarizations. The modified emission is attributed to light diffracted out of the waveguide modes of the OLEDs.

  11. LED Watch: The Outlook for OLEDs

    Broader source: Energy.gov [DOE]

    December 2014 LED Watch: The Outlook for OLEDs James Brodrick, U.S. Department of Energy LD+A Magazine

  12. The Use of Large Transparent Ceramics in a High Powered, Diode Pumped Solid State Laser

    SciTech Connect (OSTI)

    Yamamoto, R; Bhachu, B; Cutter, K; Fochs, S; Letts, S; Parks, C; Rotter, M; Soules, T

    2007-09-24T23:59:59.000Z

    The advent of large transparent ceramics is one of the key enabling technological advances that have shown that the development of very high average power compact solid state lasers is achievable. Large ceramic neodymium doped yttrium aluminum garnet (Nd:YAG) amplifier slabs are used in Lawrence Livermore National Laboratory's (LLNL) Solid State Heat Capacity Laser (SSHCL), which has achieved world record average output powers in excess of 67 kilowatts. We will describe the attributes of using large transparent ceramics, our present system architecture and corresponding performance; as well as describe our near term future plans.

  13. High Efficancy Integrated Under-Cabinet Phosphorescent OLED

    SciTech Connect (OSTI)

    Michael Hack

    2001-10-31T23:59:59.000Z

    In this two year program Universal Display Corporation (UDC) together with the University of Michigan, Teknokon, developed and delivered an energy efficient phosphorescent OLED under cabinet illumination system. Specifically the UDC team goal was in 2011 to deliver five (5) Beta level OLED under cabinet lighting fixtures each consisting of five 6-inch x 6-inch OLED lighting panels, delivering over 420 lumens, at an overall system efficacy of >60 lm/W, a CRI of >85, and a projected lifetime to 70% of initial luminance to exceed 20,000 hours. During the course of this program, the Team pursued the commercialization of these OLED based under cabinet lighting fixtures, to enable the launch of commercial OLED lighting products. The UDC team was ideally suited to develop these novel and efficient solid state lighting fixtures, having both the technical experience and commercial distribution mechanisms to leverage work performed under this contract. UDC's business strategy is to non-exclusively license its PHOLED technology to lighting manufacturers, and also supply them with our proprietary PHOLED materials. UDC is currently working with several licensees who are manufacturing OLED lighting panels using our technology. During this 2 year program, we further developed our high efficiency white Phosphorescent OLEDs from the first milestone, achieving a 80 lm/W single pixel to the final milestone, achieving an under-cabinet PHOLED lighting system that operates at 56 lm/W at 420 lumens. Each luminaire was comprised of ten 15cm x 7.5cm lighting modules mounted in outcoupling enhancement lenses and a control module. The lamps modules are connected together using either plugs or wires with plugs on each end, allowing for unlimited configurations. The lamps are driven by an OLED driver mounted in an enclosure which includes the AC plug. As a result of advancements gained under this program, the path to move OLED lighting panels from development into manufacturing has been further realized. We have found that under-cabinet lighting is an ideal first entry product opportunity to launch OLED lighting for residential applications. From the studies that we have performed, our PHOLED under-cabinet lighting system performance is very similar to many of the current commercially available LED under-cabinet luminaires. We also found that the projected cost of PHOLED luminaire should be comparable to the LED luminaire by 2015. With the additional benefits of PHOLED lighting, no glare, better uniformity and low operating temperature, it can be easily seen how the PHOLED under-cabinet luminaire could be preferred over the LED competition. Although the metrics we set for this program were extremely aggressive, the performance we achieved and reported, represents a very significant advancement in the OLED lighting industry.

  14. Enhanced coupling of light from organic light emitting diodes using nanoporous films

    E-Print Network [OSTI]

    Enhanced coupling of light from organic light emitting diodes using nanoporous films H. J. Peng, Y the light extraction efficiency for organic light emitting diode OLED . Nanoporous alumina film was used by Bragg scattering. The corrugated light- emitting diode had two-times the efficiency as compared

  15. Poly(p-phenylene vinylene)/tris(8-hydroxy) quinoline aluminum heterostructure light emitting diode

    E-Print Network [OSTI]

    Poly(p-phenylene vinylene)/tris(8-hydroxy) quinoline aluminum heterostructure light emitting diode are presented from polymer/molecular organic heterostructure light emitting diodes composed of a layer,2 organic light emitting diodes OLEDs utilizing fluorescent molecules have attracted considerable interest

  16. Efficient blue organic light-emitting diodes employing thermally activated delayed

    E-Print Network [OSTI]

    Cai, Long

    Efficient blue organic light-emitting diodes employing thermally activated delayed fluorescence,2 * Organic light-emitting diodes (OLEDs) employing thermally activated delayed fluorescence (TADF) have energy is high enough and the 3 LE state is higher than the 3 CT state. O rganic light-emitting diodes

  17. Development of High Efficacy, Low Cost Phosphorescent Oled Lightning Luminaire

    SciTech Connect (OSTI)

    Michael Hack

    2010-07-09T23:59:59.000Z

    In this two year program, UDC together with Armstrong World Industries, Professor Stephen Forrest (University of Michigan) and Professor Mark Thompson (University of Southern California) planned to develop and deliver high efficiency OLED lighting luminaires as part of an integrated ceiling illumination system that exceed the Department of Energy (DOE) 2010 performance projections. Specifically the UDC team in 2010 delivered two prototype OLED ceiling illumination systems, each consisting of four individual OLED lighting panels on glass integrated into Armstrong's novel TechZone open architecture ceiling systems, at an overall system efficacy of 51 lm/W, a CRI = 85 and a projected lifetime to 70% of initial luminance to exceed 10,000 hours. This accomplishment represents a 50% increase in luminaire efficacy and a factor of two in lifetime over that outlined in the solicitation. In addition, the team has also delivered one 15cm x 15cm lighting panel fabricated on a flexible metal foil substrate, demonstrating the possibility using OLEDs in a range of form factors. During this program, our Team has pursued the commercialization of these OLED based ceiling luminaires, with a goal to launch commercial products within the next three years. We have proven that our team is ideally suited to develop these highly novel and efficient solid state lighting luminaires, having both the technical experience and commercial strategy to leverage work performed under this contract. Our calculations show that the success of our program could lead to energy savings of more than 0.5 quads or 8 MMTC (million metric tons of carbon) per year by 2016.

  18. Challenges in OLED Research and Development

    Broader source: Energy.gov [DOE]

    View the video about OLED technology’s advantages and what is needed to move it fully into the lighting market.

  19. Components, production processes, and recommendations for future research in organic light emitting diodes

    E-Print Network [OSTI]

    Hunting, Lindsay (Lindsay E.)

    2009-01-01T23:59:59.000Z

    Organic Light Emitting Diodes (OLEDs) are small, optoelectronic devices that can be used in the production of energy-efficient, high definition displays in cell phones, computers, and televisions. These devices have great ...

  20. Storage of charge carriers on emitter molecules in organic light-emitting diodes

    E-Print Network [OSTI]

    Reineke, Sebastian

    Organic light-emitting diodes (OLEDs) using the red phosphorescent emitter iridium(III)bis(2-methyldibenzo[f,h]quinoxaline) (acetylacetonate) [Ir(MDQ)[subscript 2](acac)] are studied by time-resolved electroluminescence ...

  1. High-density organic light emitting diodes by nanoimprint technology Krutarth Trivedi, Caleb Nelson, Li Tao, Mathew Goeckner, Walter Hua)

    E-Print Network [OSTI]

    Hu, Wenchuang "Walter"

    High-density organic light emitting diodes by nanoimprint technology Krutarth Trivedi, Caleb Nelson sources. Despite the considerable development of inorganic semiconductor based light emitting diodes of miniaturization to nanoscale. Organic light emitting diode (OLED) technology is immune to quantum confinement

  2. 4.2: Design of an Improved Pixel for a Polysilicon Active Matrix Organic Light Emitting Diode Display

    E-Print Network [OSTI]

    4.2: Design of an Improved Pixel for a Polysilicon Active Matrix Organic Light Emitting Diode active matrix organic light emitting diode (AMOLED) pixel with high pixel to pixel luminance uniformity such as organic light emitting diodes (OLEDs) are presently of great interest due to their potential application

  3. Intramolecular excimer emission as a blue light source in fluorescent organic light emitting diodes: a promising molecular design

    E-Print Network [OSTI]

    Boyer, Edmond

    Intramolecular excimer emission as a blue light source in fluorescent organic light emitting diodes Light Emitting Diode (OLED), intermolecular p­p interactions should be usually suppressed to avoid any Emitting Diodes (SMOLEDs) is almost absent from the literature. In this work, three aryl-substituted Di

  4. Creation of a U.S. Phosphorescent OLED Lighting Panel Manufacturing Facility

    SciTech Connect (OSTI)

    Hack, Michael

    2013-09-30T23:59:59.000Z

    Universal Display Corporation (UDC) has pioneered high efficacy phosphorescent OLED (PHOLED™) technology to enable the realization of an exciting new form of high quality, energy saving solid-date lighting. In laboratory test devices, we have demonstrated greater than 100 lm/W conversion efficacy. In this program, Universal Display will demonstrate the scalability of its proprietary UniversalPHOLED technology and materials for the manufacture of white OLED lighting panels that meet commercial lighting targets. Moser Baer Technologies will design and build a U.S.- based pilot facility. The objective of this project is to establish a pilot phosphorescent OLED (PHOLED) manufacturing line in the U.S. Our goal is that at the end of the project, prototype lighting panels could be provided to U.S. luminaire manufacturers for incorporation into products to facilitate the testing of design concepts and to gauge customer acceptance, so as to facilitate the growth of the embryonic U.S. OLED lighting industry. In addition, the team will provide a cost of ownership analysis to quantify production costs including OLED performance metrics which relate to OLED cost such as yield, materials usage, cycle time, substrate area, and capital depreciation. This project was part of a new DOE initiative designed to help establish and maintain U.S. leadership in this program will support key DOE objectives by showing a path to meet Department of Energy Solid-State Lighting Manufacturing Roadmap cost targets, as well as meeting its efficiency targets by demonstrating the energy saving potential of our technology through the realization of greater than 76 lm/W OLED lighting panels by 2012.

  5. Using prismatic microstructured films for image blending in OLEDS

    DOE Patents [OSTI]

    Haenichen, Lukas (Anspach, DE); Pschenitzka, Florian (San Francisco, CA)

    2009-09-08T23:59:59.000Z

    An apparatus such as a light source is disclosed which has an OLED device and a microstructured film disposed on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The microstructured film contains features which diffuse light emitted by said OLED device and increase the luminance of the device.

  6. Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting

    SciTech Connect (OSTI)

    Martin Bluhm; James Coffey; Roman Korotkov; Craig Polsz; Alexandre Salemi; Robert Smith; Ryan Smith; Jeff Stricker; Chen Xu; Jasmine Shirazi; George Papakonstantopulous; Steve Carson; Claudia Goldman; Soren Hartmann; Frank Jessen; Bianca Krogmann; Christoph Rickers; Manfred Ruske; Holger Schwab; Dietrich Bertram

    2011-01-02T23:59:59.000Z

    Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exacerbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectronic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availability of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a clear focus on economics and the work plan focused both on doped ZnO process and OLED device structure that would be consistent with the new TCO. The team successfully made 6 inch OLEDs with a serial construction. More process development is required to optimize commercial OLED structures. Feasibility was demonstrated on two different light extraction technologies: 1/4 lambda refractive index matching and high-low-high band pass filter. Process development was also completed on the key precursors for the TCO, which are ready for pilot-plant scale-up. Subsequently, Arkema has developed a cost of ownership model that is consistent with DOE SSL R&D Manufacturing targets as outlined in the DOE SSL R&D Manufacturing 2010 report. The overall outcome of this project was the demonstration that doped zinc oxide can be used for OLED devices without a drop-off in performance while gaining the economic and sustainable benefits of a more readily available TCO. The broad impact of this project, is the facilitation of OLED lighting market penetration into general illumination, resulting in significant energy savings, decreased greenhouse emissions, with no environmental impact issues such as mercury found in Fluorescent technology. The primary objective of this project was to develop a commercially viable process for 'Substrates' (Substrate/ undercoat/ TCO topcoat) to be used in production of OLED devices (lamps/luminaries/modules). This project focused on using Arkema's recently developed doped ZnO technology for the Fenestration industry and applying the technology to the OLED lighting industry. The secondary objective was the use of undercoat technology to improve light extraction from the OLED device. In optical fields and window applications, technology has been developed to mitigate reflection losses by selecting appropriate thicknesses and refractive indices of coatings applied either below or above the functional layer of interest. This technology has been proven and implemented in the fenestration industry for more than 15 years. Successful completion of

  7. Recovery Act: Low Cost Integrated Substrate for OLED Lighting Development

    SciTech Connect (OSTI)

    Scott Benton; Abhinav Bhandari

    2012-09-30T23:59:59.000Z

    PPG pursued the development of an integrated substrate, including the anode, external, and internal extraction layers. The objective of PPGâ??s program was to achieve cost reductions by displacing the existing expensive borosilicate or double-side polished float glass substrates and developing alternative electrodes and scalable light extraction layer technologies through focused and short-term applied research. One of the key highlights of the project was proving the feasibility of using PPGâ??s high transmission Solarphire® float glass as a substrate to consistently achieve organic lightemitting diode (OLED) devices with good performance and high yields. Under this program, four low-cost alternatives to the Indium Tin Oxide (ITO) anode were investigated using pilot-scale magnetron sputtered vacuum deposition (MSVD) and chemical vapor deposition (CVD) technologies. The anodes were evaluated by fabricating small and large phosphorescent organic lightemitting diode (PHOLED) devices at Universal Display Corporation (UDC). The device performance and life-times comparable to commercially available ITO anodes were demonstrated. A cost-benefit analysis was performed to down-select two anodes for further low-cost process development. Additionally, PPG developed and evaluated a number of scalable and compatible internal and external extraction layer concepts such as scattering layers on the outside of the glass substrate or between the transparent anode and the glass interface. In one external extraction layer (EEL) approach, sol-gel sprayed pyrolytic coatings were deposited using lab scale equipment by hand or automated spraying of sol-gel solutions on hot glass, followed by optimizing of scattering with minimal absorption. In another EEL approach, PPG tested large-area glass texturing by scratching a glass surface with an abrasive roller and acid etching. Efficacy enhancements of 1.27x were demonstrated using white PHOLED devices for 2.0mm substrates which are at par with the standard diffuser sheets used by OLED manufacturers. For an internal extraction layer (IEL), PPG tested two concepts combining nanoparticles either in a solgel coating inserted between the anode and OLED or anode and glass interface, or incorporated into the internal surface of the glass. Efficacy enhancements of 1.31x were demonstrated using white PHOLED devices for the IEL by itself and factors of 1.73x were attained for an IEL in combination of thick acrylic block as an EEL. Recent offline measurements indicate that, with further optimization, factors over 2.0x could be achieved through an IEL alone.

  8. Quantum Dot Light Emitting Diode

    SciTech Connect (OSTI)

    Kahen, Keith

    2008-07-31T23:59:59.000Z

    The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m{sup 2}, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.

  9. Quantum Dot Light Emitting Diode

    SciTech Connect (OSTI)

    Keith Kahen

    2008-07-31T23:59:59.000Z

    The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m2, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.

  10. Efficiency improvement of phosphorescent organic light-emitting diodes using semitransparent Ag as anode

    E-Print Network [OSTI]

    Efficiency improvement of phosphorescent organic light-emitting diodes using semitransparent Ag The emission efficiency in an organic light-emitting diode OLED based on fac tris phenyl pyridine iridium Ir current efficiency of 81 cd/A and a power efficiency of 79 lm/W, compared with 46 cd/A and 39 lm

  11. Light extraction from organic light-emitting diodes for lighting applications by sand-blasting

    E-Print Network [OSTI]

    Light extraction from organic light-emitting diodes for lighting applications by sand@ust.hk Abstract: Light extraction from organic light-emitting diodes (OLEDs) by scattering the light is one of the effective methods for large-area lighting applications. In this paper, we present a very simple and cost

  12. Spontaneous fluctuations of transition dipole moment orientation in OLED triplet emitters

    E-Print Network [OSTI]

    Steiner, Florian; Vogelsang, Jan; Lupton, John M

    2015-01-01T23:59:59.000Z

    The efficiency of an organic light-emitting diode (OLED) depends on the microscopic orientation of transition dipole moments of the molecular emitters. The most effective materials used for light generation have threefold symmetry, which prohibit a priori determination of dipole orientation due to the degeneracy of the fundamental transition. Single-molecule spectroscopy reveals that the model triplet emitter tris(2-phenylisoquinoline)iridium(III) (Ir(piq)3) does not behave as a linear dipole, radiating with lower polarization anisotropy than expected. Spontaneous symmetry breaking occurs in the excited state, leading to a random selection of one of the three ligands to form a charge transfer state with the metal. This non-deterministic localization is revealed in switching of the degree of linear polarization of phosphorescence. Polarization scrambling likely raises out-coupling efficiency and should be taken into account when deriving molecular orientation of the guest emitter within the OLED host from ense...

  13. White organic light-emitting diodes: Status and perspective

    E-Print Network [OSTI]

    Reineke, Sebastian; Lüssem, Björn; Leo, Karl

    2013-01-01T23:59:59.000Z

    White organic light-emitting diodes (OLEDs) are ultra-thin, large-area light sources made from organic semiconductor materials. Over the last decades, much research has been spent on finding the suitable materials to realize highly efficient monochrome and white OLEDs. With their high efficiency, color-tunability, and color-quality, white OLEDs are emerging to become one of the next generation light sources. In this review, we discuss the physics of a variety of device concepts that are introduced to realize white OLEDs based on both polymer and small molecule organic materi als. Owing to the fact that about 80 % of the internally generated photons are trapped within the thin-film layer structure, we put a second focus on reviewing promising concepts for improved light outcoupling.

  14. Spectrally narrowed leaky waveguide edge emission and transient electrluminescent dynamics of OLEDs

    SciTech Connect (OSTI)

    Zhengqing, Gan

    2010-05-16T23:59:59.000Z

    In summary, there are two major research works presented in this dissertation. The first research project (Chapter 4) is spectrally narrowed edge emission from Organic Light Emitting Diodes. The second project (Chapter 5) is about transient electroluminescent dynamics in OLEDs. Chapter 1 is a general introduction of OLEDs. Chapter 2 is a general introduction of organic semiconductor lasers. Chapter 3 is a description of the thermal evaporation method for OLED fabrication. The detail of the first project was presented in Chapter 4. Extremely narrowed spectrum was observed from the edge of OLED devices. A threshold thickness exists, above which the spectrum is narrow, and below which the spectrum is broad. The FWHM of spectrum depends on the material of the organic thin films, the thickness of the organic layers, and length of the OLED device. A superlinear relationship between the output intensity of the edge emission and the length of the device was observed, which is probably due to the misalignment of the device edge and the optical fiber detector. The original motivation of this research is for organic semiconductor laser that hasn't been realized due to the extremely high photon absorption in OLED devices. Although we didn't succeed in fabricating an electrically pumped organic laser diode, we made a comprehensive research in edge emission of OLEDs which provides valuable results in understanding light distribution and propagation in OLED devices. Chapter 5 focuses on the second project. A strong spike was observed at the falling edge of a pulse, and a long tail followed. The spike was due to the recombination of correlated charge pair (CCP) created by trapped carriers in guest molecules of the recombination zone. When the bias was turned off, along with the decreasing of electric field in the device, the electric field induced quenching decreases and the recombination rate of the CCP increases which result in the spike. This research project provides a profound understanding of the EL dynamics of OLED, and the theoretical model can fit and explain the experiment data quite well. For the edge emission, we focused on the spectrum and the relative intensity of the edge emission. In the future, more research can be done on the comparison of the intensity between the total edge emission and the surface emission which will give us a sense what fraction of light was trapped in the device. Micro structures can be integrated into the OLED such as DFB and DBR, the character of edge emission should be very interesting. For the transient spike, the CCP model can give a good explanation. But in the model, the effect of the electric field change is not included, because from the start point (t=0), we assume the mobility of carriers is a constant. If we consider the details of the change of the electric field, then when turning of the bias, the decrease of the electric field results in decrease of the carrier mobility and the dissociation rate. If we can add the electric field effect into the model, the whole theory will be more convincing.

  15. High Efficiency, Illumination Quality OLEDs for Lighting

    SciTech Connect (OSTI)

    Joseph Shiang; James Cella; Kelly Chichak; Anil Duggal; Kevin Janora; Chris Heller; Gautam Parthasarathy; Jeffery Youmans; Joseph Shiang

    2008-03-31T23:59:59.000Z

    The goal of the program was to demonstrate a 45 lumen per watt white light device based upon the use of multiple emission colors through the use of solution processing. This performance level is a dramatic extension of the team's previous 15 LPW large area illumination device. The fundamental material system was based upon commercial polymer materials. The team was largely able to achieve these goals, and was able to deliver to DOE a 90 lumen illumination source that had an average performance of 34 LPW a 1000 cd/m{sup 2} with peak performances near 40LPW. The average color temperature is 3200K and the calculated CRI 85. The device operated at a brightness of approximately 1000cd/m{sup 2}. The use of multiple emission colors particularly red and blue, provided additional degrees of design flexibility in achieving white light, but also required the use of a multilayered structure to separate the different recombination zones and prevent interconversion of blue emission to red emission. The use of commercial materials had the advantage that improvements by the chemical manufacturers in charge transport efficiency, operating life and material purity could be rapidly incorporated without the expenditure of additional effort. The program was designed to take maximum advantage of the known characteristics of these material and proceeded in seven steps. (1) Identify the most promising materials, (2) assemble them into multi-layer structures to control excitation and transport within the OLED, (3) identify materials development needs that would optimize performance within multilayer structures, (4) build a prototype that demonstrates the potential entitlement of the novel multilayer OLED architecture (5) integrate all of the developments to find the single best materials set to implement the novel multilayer architecture, (6) further optimize the best materials set, (7) make a large area high illumination quality white OLED. A photo of the final deliverable is shown. In 2003, a large area, OLED based illumination source was demonstrated that could provide light with a quality, quantity, and efficiency on par with what can be achieved with traditional light sources. The demonstration source was made by tiling together 16 separate 6-inch x 6-inch blue-emitting OLEDs. The efficiency, total lumen output, and lifetime of the OLED based illumination source were the same as what would be achieved with an 80 watt incandescent bulb. The devices had an average efficacy of 15 LPW and used solution-processed OLEDs. The individual 6-inch x 6-inch devices incorporated three technology strategies developed specifically for OLED lighting -- downconversion for white light generation, scattering for outcoupling efficiency enhancement, and a scalable monolithic series architecture to enable large area devices. The downconversion approach consists of optically coupling a blue-emitting OLED to a set of luminescent layers. The layers are chosen to absorb the blue OLED emission and then luminescence with high efficiency at longer wavelengths. The composition and number of layers are chosen so that the unabsorbed blue emission and the longer wavelength re-emission combine to make white light. A downconversion approach has the advantage of allowing a wide variety of colors to be made from a limited set of blue emitters. In addition, one does not have to carefully tune the emission wavelength of the individual electro-luminescent species within the OLED device in order to achieve white light. The downconversion architecture used to develop the 15LPW large area light source consisted of a polymer-based blue-emitting OLED and three downconversion layers. Two of the layers utilized perylene based dyes from BASF AG of Germany with high quantum efficiency (>98%) and one of the layers consisted of inorganic phosphor particles (Y(Gd)AG:Ce) with a quantum efficiency of {approx}85%. By independently varying the optical density of the downconversion layers, the overall emission spectrum could be adjusted to maximize performance for lighting (e.g. blackbody temp

  16. Vacuum-free lamination of low work function cathode for efficient solution-processed organic light-emitting diodes

    E-Print Network [OSTI]

    Meng, Hsin-Fei

    -coated organic light-emitting diode is transferred from a soft polydimethylsiloxane (PDMS) mold by lamination, or blade coating [1,2] for organic light emitting diode (OLED) as well as solar cell. The top electrodeVacuum-free lamination of low work function cathode for efficient solution-processed organic light-emitting

  17. Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting

    SciTech Connect (OSTI)

    Gary Silverman; Bluhm, Martin; Coffey, James; Korotkov, Roman; Polsz, Craig; Salemi, Alexandre; Smith, Robert; Smith, Ryan; Stricker, Jeff; Xu,Chen; Shirazi, Jasmine; Papakonstantopulous, George; Carson, Steve Philips Lighting GmbH Goldman, Claudia; Hartmann, Sören; Jessen, Frank; ,; Krogmann, Bianca; Rickers, Christoph; Ruske, Manfred, Schwab, Holger; Bertram, Dietrich

    2011-01-02T23:59:59.000Z

    Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exaserbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectonic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availablility of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a clear focus on economics and the work plan focused both on doped ZnO process and OLED device structure that would be consistent with the new TCO. The team successfully made 6 inch OLEDs with a serial construction. More process development is required to optimize commercial OLED structures. Feasibility was demonstrated on two different light extraction technologies: 1/4 lambda refractive index matching and high-low-high band pass filter. Process development was also completed on the key precursors for the TCO, which are ready for pilot-plant scale-up. Subsequently, Arkema has developed a cost of ownership model that is consistent with DOE SSL R&D Manufacturing targets as outlined in the DOE SSL R&D Manufacturing 2010 report. The overall outcome of this project was the demonstration that doped zinc oxide can be used for OLED devices without a drop-off in performance while gaining the economic and sustainable benefits of a more readily available TCO. The broad impact of this project, is the facilitation of OLED lighting market penetration into general illumination, resulting in significant energy savings, decreased greenhouse emissions, with no environmental impact issues such as mercury found in Fluorescent technology.

  18. A Polysilicon Active Matrix Organic Light Emitting Diode Display with Integrated Drivers R.M.A. Dawson, Z. Shen, D.A. Furst, S. Connor, J. Hsu, M.G. Kane, R.G. Stewart, A. Ipri

    E-Print Network [OSTI]

    A Polysilicon Active Matrix Organic Light Emitting Diode Display with Integrated Drivers R.S.A. Abstract The design of an active matrix organic light emitting diode (AMOLED) display using a polysilicon. Introduction Organic light emitting diodes (OLEDs) are presently of great interest due to their potential

  19. Roll-To-Roll Process for Transparent Metal Electrodes in OLED Manufacturing

    SciTech Connect (OSTI)

    Slafer, W. Dennis

    2010-06-02T23:59:59.000Z

    This program will develop and demonstrate a new manufacturing technology that can help to improve the efficiency and reduce the cost of producing the next generation solid-state lighting (OLEDs)for a broad range of commercial applications. This will not only improve US competitiveness in the manufacturing sector but will also result in a positive impact in meeting the Department of Energy’s goal of developing high efficiency lighting while reducing the environmental impact.

  20. Low Voltage White Phosphorescent OLED Achievements

    Broader source: Energy.gov [DOE]

    Universal Display Corporation (UDC) and its research partners at Princeton University and the University of Southern California have succeeded in developing a white phosphorescent OLED (PHOLED™) that achieved a record efficiency of 20 lumens per watt. This achievement is the result of the team's collaborative efforts to increase the efficiency of PHOLED lighting by focusing on two critical factors: lowering the drive voltages and increasing the amount of light extracted.

  1. Diode pumped solid state kilohertz disk laser system for time-resolved combustion diagnostics under microgravity at the drop tower Bremen

    SciTech Connect (OSTI)

    Wagner, Volker; Paa, Wolfgang; Triebel, Wolfgang [Institute of Photonic Technology, Laser Diagnostics, Albert-Einstein-Str. 9, 07745 Jena (Germany)] [Institute of Photonic Technology, Laser Diagnostics, Albert-Einstein-Str. 9, 07745 Jena (Germany); Eigenbrod, Christian; Klinkov, Konstantin [Center of Applied Space Technology and Microgravity, University Bremen, Am Fallturm, 28359 Bremen (Germany)] [Center of Applied Space Technology and Microgravity, University Bremen, Am Fallturm, 28359 Bremen (Germany); Larionov, Mikhail; Giesen, Adolf; Stolzenburg, Christian [Institut für Strahlwerkzeuge (IFSW), Pfaffenwaldring 43, 70569 Stuttgart (Germany)] [Institut für Strahlwerkzeuge (IFSW), Pfaffenwaldring 43, 70569 Stuttgart (Germany)

    2014-03-15T23:59:59.000Z

    We describe a specially designed diode pumped solid state laser system based on the disk laser architecture for combustion diagnostics under microgravity (?g) conditions at the drop tower in Bremen. The two-stage oscillator-amplifier-system provides an excellent beam profile (TEM{sub 00}) at narrowband operation (?? < 1 pm) and is tunable from 1018 nm to 1052 nm. The laser repetition rate of up to 4 kHz at pulse durations of 10 ns enables the tracking of processes on a millisecond time scale. Depending on the specific issue it is possible to convert the output radiation up to the fourth harmonic around 257 nm. The very compact laser system is integrated in a slightly modified drop capsule and withstands decelerations of up to 50 g (>11 ms). At first the concept of the two-stage disk laser is briefly explained, followed by a detailed description of the disk laser adaption to the drop tower requirements with special focus on the intended use under ?g conditions. In order to demonstrate the capabilities of the capsule laser as a tool for ?g combustion diagnostics, we finally present an investigation of the precursor-reactions before the droplet ignition using 2D imaging of the Laser Induced Fluorescence of formaldehyde.

  2. A self-injected, diode-pumped, solid-state ring laser for laser cooling of Li atoms

    E-Print Network [OSTI]

    Miake, Yudai; O'Hara, Kenneth M; Gensemer, Stephen

    2015-01-01T23:59:59.000Z

    We have constructed a solid-state light source for experiments with laser cooled lithium atoms based on a Nd:YVO$_4$ ring laser with second-harmonic generation. Unidirectional lasing, an improved mode selection, and a high output power of the ring laser was achieved by weak coupling to an external cavity which contained the lossy elements required for single frequency operation. Continuous frequency tuning is accomplished by controlling two PZTs in the internal and the external cavities simultaneously. The light source has been utilized to trap and cool fermionic lithium atoms into the quantum degenerate regime.

  3. OLED Manufacture Challenge: Strategy for Cost Reduction and Yield...

    Energy Savers [EERE]

    activity in China will help to leverage the fund for potential market of OLED lighting: Eye-shielding Lamps for Children Shadowless Surgical Operating Lamp New Construction Design...

  4. Novel Structured LED and OLED Devices - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to achieve a semiconductor island structure of high crystalline quality for covering the substrate. Similarly, light extraction, particularly for OLEDs, remains an obstacle to...

  5. OLED Stakeholder Meeting Report | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742Energy ChinaofSchaeferAprilOverview |November(National RenewableAnnual Report O H A fficeThisOLED

  6. Efficient Light Extraction from Organic Light-Emitting Diodes Using Plasmonic Scattering Layers

    SciTech Connect (OSTI)

    Rothberg, Lewis

    2012-11-30T23:59:59.000Z

    Our project addressed the DOE MYPP 2020 goal to improve light extraction from organic light-emitting diodes (OLEDs) to 75% (Core task 6.3). As noted in the 2010 MYPP, “the greatest opportunity for improvement is in the extraction of light from [OLED] panels”. There are many approaches to avoiding waveguiding limitations intrinsic to the planar OLED structure including use of textured substrates, microcavity designs and incorporating scattering layers into the device structure. We have chosen to pursue scattering layers since it addresses the largest source of loss which is waveguiding in the OLED itself. Scattering layers also have the potential to be relatively robust to color, polarization and angular distributions. We note that this can be combined with textured or microlens decorated substrates to achieve additional enhancement.

  7. Organic light-emitting diodes from homoleptic square planar complexes

    DOE Patents [OSTI]

    Omary, Mohammad A

    2013-11-12T23:59:59.000Z

    Homoleptic square planar complexes [M(N.LAMBDA.N).sub.2], wherein two identical N.LAMBDA.N bidentate anionic ligands are coordinated to the M(II) metal center, including bidentate square planar complexes of triazolates, possess optical and electrical properties that make them useful for a wide variety of optical and electrical devices and applications. In particular, the complexes are useful for obtaining white or monochromatic organic light-emitting diodes ("OLEDs"). Improved white organic light emitting diode ("WOLED") designs have improved efficacy and/or color stability at high brightness in single- or two-emitter white or monochrome OLEDs that utilize homoleptic square planar complexes, including bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II) ("Pt(ptp).sub.2").

  8. Low Power, Red, Green and Blue Carbon Nanotube Enabled Vertical Organic Light Emitting Transistors for Active Matrix OLED Displays

    SciTech Connect (OSTI)

    McCarthy, M. A. [University of Florida, Gainesville; Liu, B. [University of Florida, Gainesville; Donoghue, E. P. [University of Florida, Gainesville; Kravchenko, Ivan I [ORNL; Kim, D. Y. [University of Florida, Gainesville; So, Franky [University of Florida, Gainesville; Rinzler, A. G. [University of Florida, Gainesville

    2011-01-01T23:59:59.000Z

    Organic semiconductors are potential alternatives to polycrystalline silicon as the semiconductor used in the backplane of active matrix organic light emitting diode displays. Demonstrated here is a light-emitting transistor with an organic channel, operating with low power dissipation at low voltage, and high aperture ratio, in three colors: red, green and blue. The single-wall carbon nanotube network source electrode is responsible for the high level of performance demonstrated. A major benefit enabled by this architecture is the integration of the drive transistor, storage capacitor and light emitter into a single device. Performance comparable to commercialized polycrystalline-silicon TFT driven OLEDs is demonstrated.

  9. Thin Film Packaging Solutions for High Efficiency OLED Lighting Products

    SciTech Connect (OSTI)

    None

    2008-06-30T23:59:59.000Z

    The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000 hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology was characterized as having less than 10% change in transmission during the 15,000 hour test period; (3) demonstrated thin film encapsulation of a phosphorescent OLED device with 1,500 hours of lifetime at 60 C and 80% RH; (4) demonstrated that a thin film laminate encapsulation, in addition to the direct thin film deposition process, of a polymer OLED device was another feasible packaging strategy for OLED lighting. The thin film laminate strategy was developed to mitigate defects, demonstrate roll-to-roll process capability for high volume throughput (reduce costs) and to support a potential commercial pathway that is less dependent upon integrated manufacturing since the laminate could be sold as a rolled good; (5) demonstrated that low cost 'blue' glass substrates could be coated with a siloxane barrier layer for planarization and ion-protection and used in the fabrication of a polymer OLED lighting device. This study further demonstrated that the substrate cost has potential for huge cost reductions from the white borosilicate glass substrate currently used by the OLED lighting industry; (6) delivered four-square feet of white phosphorescent OLED technology, including novel high efficiency devices with 82 CRI, greater than 50 lm/W efficiency, and more than 1,000 hours lifetime in a product concept model shelf; (7) presented and or published more than twenty internal studies (for private use), three external presentations (OLED workshop-for public use), and five technology-related external presentations (industry conferences-for public use); and (8) issued five patent applications, which are in various maturity stages at time of publication. Delivery of thin film encapsulated white phosphorescent OLED lighting technology remains a challenging technical achievement, and it seems that commercial availability of thin, bright, white OLED light that meets market requirements will continue to require research and development effort. However, there will be glass encapsulated white OLED lighting products commercialized in niche markets during the 2008 calendar year. This commercializ

  10. Enhancement of hole injection and electroluminescence by ordered Ag nanodot array on indium tin oxide anode in organic light emitting diode

    SciTech Connect (OSTI)

    Jung, Mi, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Mo Yoon, Dang; Kim, Miyoung [Korea Printed Electronics Center, Korea Electronics Technology Institute, Jeollabuk-do, 561-844 (Korea, Republic of); Kim, Chulki; Lee, Taikjin; Hun Kim, Jae; Lee, Seok; Woo, Deokha, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Lim, Si-Hyung [School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of)

    2014-07-07T23:59:59.000Z

    We report the enhancement of hole injection and electroluminescence (EL) in an organic light emitting diode (OLED) with an ordered Ag nanodot array on indium-tin-oxide (ITO) anode. Until now, most researches have focused on the improved performance of OLEDs by plasmonic effects of metal nanoparticles due to the difficulty in fabricating metal nanodot arrays. A well-ordered Ag nanodot array is fabricated on the ITO anode of OLED using the nanoporous alumina as an evaporation mask. The OLED device with Ag nanodot arrays on the ITO anode shows higher current density and EL enhancement than the one without any nano-structure. These results suggest that the Ag nanodot array with the plasmonic effect has potential as one of attractive approaches to enhance the hole injection and EL in the application of the OLEDs.

  11. Surface Plasmon Enhanced Phosphorescent Organic Light Emitting Diodes

    SciTech Connect (OSTI)

    Guillermo Bazan; Alexander Mikhailovsky

    2008-08-01T23:59:59.000Z

    The objective of the proposed work was to develop the fundamental understanding and practical techniques for enhancement of Phosphorescent Organic Light Emitting Diodes (PhOLEDs) performance by utilizing radiative decay control technology. Briefly, the main technical goal is the acceleration of radiative recombination rate in organometallic triplet emitters by using the interaction with surface plasmon resonances in noble metal nanostructures. Increased photonic output will enable one to eliminate constraints imposed on PhOLED efficiency by triplet-triplet annihilation, triplet-polaron annihilation, and saturation of chromophores with long radiative decay times. Surface plasmon enhanced (SPE) PhOLEDs will operate more efficiently at high injection current densities and will be less prone to degradation mechanisms. Additionally, introduction of metal nanostructures into PhOLEDs may improve their performance due to the improvement of the charge transport through organic layers via multiple possible mechanisms ('electrical bridging' effects, doping-like phenomena, etc.). SPE PhOLED technology is particularly beneficial for solution-fabricated electrophosphorescent devices. Small transition moment of triplet emitters allows achieving a significant enhancement of the emission rate while keeping undesirable quenching processes introduced by the metal nanostructures at a reasonably low level. Plasmonic structures can be introduced easily into solution-fabricated PhOLEDs by blending and spin coating techniques and can be used for enhancement of performance in existing device architectures. This constitutes a significant benefit for a large scale fabrication of PhOLEDs, e.g. by roll-to-roll fabrication techniques. Besides multieexciton annihilation, the power efficacy of PhOLEDs is often limited by high operational bias voltages required for overcoming built-in potential barriers to injection and transport of electrical charges through a device. This problem is especially pronounced in solution processed OLEDs lacking the accuracy and precision of fabrication found in their small molecule counterparts. From this point of view, it seems beneficial to develop materials allowing reduction of the operation bias voltage via improvement of the charge injection. The materials sought have to be compatible with solution-based fabrication process and allow easy incorporation of metal nanostructures.

  12. PPG Industries Develops a Low-Cost Integrated OLED Substrate

    Broader source: Energy.gov [DOE]

    With the help of DOE funding, PPG Industries, Inc., has developed a low-cost OLED substrate, using inexpensive soda-lime "float" glass that the company manufactures at high volume for the architectural industry. Float glass is thin sheet glass and is much less expensive than the borosilicate or double-side-polished display glass that's currently being used as substrates by OLED device manufacturers.

  13. Top-emitting Organic Light-Emitting Diode with a Cap Layer Chengfeng Qiu, Huajun Peng, Haiying Chen, Zhilang Xie,

    E-Print Network [OSTI]

    Kwok, Hoi S.

    , Kowloon, Hong Kong, China ABSTRACT For top emitting Organic Light-Emitting Diodes (OLED), the study of top layer is very important aiming to acquire good device performance. In this report, Pt as anode for Cu coated on glass as anode, copper (II) phthalocyanine (CuPc) as organic buffer layer, N,N'- diphenyl

  14. High Quantum Efficiency OLED Lighting Systems

    SciTech Connect (OSTI)

    Shiang, Joseph

    2011-09-30T23:59:59.000Z

    The overall goal of the program was to apply improvements in light outcoupling technology to a practical large area plastic luminaire, and thus enable the product vision of an extremely thin form factor high efficiency large area light source. The target substrate was plastic and the baseline device was operating at 35 LPW at the start of the program. The target LPW of the program was a >2x improvement in the LPW efficacy and the overall amount of light to be delivered was relatively high 900 lumens. Despite the extremely difficult challenges associated with scaling up a wet solution process on plastic substrates, the program was able to make substantial progress. A small molecule wet solution process was successfully implemented on plastic substrates with almost no loss in efficiency in transitioning from the laboratory scale glass to large area plastic substrates. By transitioning to a small molecule based process, the LPW entitlement increased from 35 LPW to 60 LPW. A further 10% improvement in outcoupling efficiency was demonstrated via the use of a highly reflecting cathode, which reduced absorptive loss in the OLED device. The calculated potential improvement in some cases is even larger, ~30%, and thus there is considerable room for optimism in improving the net light coupling efficacy, provided absorptive loss mechanisms are eliminated. Further improvements are possible if scattering schemes such as the silver nanowire based hard coat structure are fully developed. The wet coating processes were successfully scaled to large area plastic substrate and resulted in the construction of a 900 lumens luminaire device.

  15. Light extraction enhanced white light-emitting diodes with multi-layered phosphor configuration

    E-Print Network [OSTI]

    You, Jiun Pyng; Tran, Nguyen T.; Shi, Frank G.

    2010-01-01T23:59:59.000Z

    and J. K. Kim, “Solid-state light sources getting smart,”power phosphor-converted light-emitting diodes based on III-for phosphor- based white-light-emitting diodes,” Appl.

  16. Thermal properties of organic light-emitting diodes

    SciTech Connect (OSTI)

    Bergemann, Kevin; Krasny, Robert; Forrest, Stephen R.

    2012-01-01T23:59:59.000Z

    Thermal management is important for the efficient operation of organic light-emitting diodes (OLED, or PHOLED) at high brightness, with the device operating temperature influencing both lifetime and performance. We apply a transmission-matrix approach to analytically model the effects of thermal conduction, convection and radiation on OLED temperature. The model predictions match experiment without requiring the use of fitting parameters. This allows for the simulation of the thermal response of various device architectures, materials combinations and environmental factors under a variety of operating conditions. Using these simulations, we find that 87% of the heat is dissipated through the air space adjacent to the glass package cap. Furthermore, an air gap between the device cathode and cap provides a significant thermal impedance. Minimizing the thickness of the internal air gap can lead to nearly room temperature operation, even at very high brightness.

  17. Room-temperature spin-polarized organic light-emitting diodes with a single ferromagnetic electrode

    SciTech Connect (OSTI)

    Ding, Baofu, E-mail: b.ding@ecu.edu.au; Alameh, Kamal, E-mail: k.alameh@ecu.edu.au [Electron Science Research Institute, Edith Cowan University, 270 Joondalup Drive, Joondalup WA 6027 Australia (Australia); Song, Qunliang [Institute for Clean Energy and Advanced Materials, Southwest University, Chongqing 400715 (China)

    2014-05-19T23:59:59.000Z

    In this paper, we demonstrate the concept of a room-temperature spin-polarized organic light-emitting diode (Spin-OLED) structure based on (i) the deposition of an ultra-thin p-type organic buffer layer on the surface of the ferromagnetic electrode of the Spin-OLED and (ii) the use of oxygen plasma treatment to modify the surface of that electrode. Experimental results demonstrate that the brightness of the developed Spin-OLED can be increased by 110% and that a magneto-electroluminescence of 12% can be attained for a 150?mT in-plane magnetic field, at room temperature. This is attributed to enhanced hole and room-temperature spin-polarized injection from the ferromagnetic electrode, respectively.

  18. Laser diode package with enhanced cooling

    DOE Patents [OSTI]

    Deri, Robert J. (Pleasanton, CA); Kotovsky, Jack (Oakland, CA); Spadaccini, Christopher M. (Oakland, CA)

    2012-06-12T23:59:59.000Z

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  19. Laser diode package with enhanced cooling

    DOE Patents [OSTI]

    Deri, Robert J. (Pleasanton, CA); Kotovsky, Jack (Oakland, CA); Spadaccini, Christopher M. (Oakland, CA)

    2011-09-13T23:59:59.000Z

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  20. Laser diode package with enhanced cooling

    DOE Patents [OSTI]

    Deri, Robert J.; Kotovsky, Jack; Spadaccini, Christopher M.

    2012-06-26T23:59:59.000Z

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  1. Novel Low Cost Organic Vapor Jet Printing of Striped High Efficiency Phosphorescent OLEDs for White Lighting

    SciTech Connect (OSTI)

    Mike Hack

    2008-12-31T23:59:59.000Z

    In this program, Universal Display Corporation and University of Michigan proposed to integrate three innovative concepts to meet the DOE's Solid State Lighting (SSL) goals: (1) high-efficiency phosphorescent organic light emitting device (PHOLED{trademark}) technology, (2) a white lighting design that is based on a series of red, green and blue OLED stripes, and (3) the use of a novel cost-effective, high rate, mask-less deposition process called organic vapor jet printing (OVJP). Our PHOLED technology offers up to four-times higher power efficiency than other OLED approaches for general lighting. We believe that one of the most promising approaches to maximizing the efficiency of OLED lighting sources is to produce stripes of the three primary colors at such a pitch (200-500 {mu}m) that they appear as a uniform white light to an observer greater than 1 meter (m) away from the illumination source. Earlier work from a SBIR Phase 1 entitled 'White Illumination Sources Using Striped Phosphorescent OLEDs' suggests that stripe widths of less than 500 {mu}m appear uniform from a distance of 1m without the need for an external diffuser. In this program, we intend to combine continued advances in this PHOLED technology with the striped RGB lighting design to demonstrate a high-efficiency, white lighting source. Using this background technology, the team has focused on developing and demonstrating the novel cost-effective OVJP process to fabricate these high-efficiency white PHOLED light sources. Because this groundbreaking OVJP process is a direct printing approach that enables the OLED stripes to be printed without a shadow mask, OVJP offers very high material utilization and high throughput without the costs and wastage associated with a shadow mask (i.e. the waste of material that deposits on the shadow mask itself). As a direct printing technique, OVJP also has the potential to offer ultra-high deposition rates (> 1,000 Angstroms/second) for any size or shaped features. As a result, we believe that this work will lead to the development of a cost-effective manufacturing solution to produce very-high efficiency OLEDs. By comparison to more common ink-jet printing (IJP), OVJP can also produce well-defined patterns without the need to pattern the substrate with ink wells or to dry/anneal the ink. In addition, the material set is not limited by viscosity and solvent solubility. During the program we successfully demonstrated a 6-inch x 6-inch PHOLED lighting panel consisting of fine-featured red, green and blue (R-G-B) stripes (1mm width) using an OVJP deposition system that was designed, procured and installed into UDC's cleanroom as part of this program. This project will significantly accelerate the DOE's ability to meet its 2015 DOE SSL targets of 70-150 lumens/Watt and less than $10 per 1,000 lumens for high CRI lighting index (76-90). Coupled with a low cost manufacturing path through OVJP, we expect that this achievement will enable the DOE to achieve its 2015 performance goals by the year 2013, two years ahead of schedule. As shown by the technical work performed under this program, we believe that OVJP is a very promising technology to produce low cost, high efficacy, color tunable light sources. While we have made significant progress to develop OVJP technology and build a pilot line tool to study basic aspects of the technology and demonstrate a lighting panel prototype, further work needs to be performed before its full potential and commercial viability can be fully assessed.

  2. Soft holographic interference lithography microlens for enhanced organic light emitting diode light extraction

    SciTech Connect (OSTI)

    Park, Joong-Mok; Gan, Zhengqing; Leung, Wai Y.; Liu, Rui; Ye, Zhuo; Constant, Kristen; Shinar, Joseph; Shinar, Ruth; Ho, Kai-Ming

    2011-06-06T23:59:59.000Z

    Very uniform 2 {micro}m-pitch square microlens arrays ({micro}LAs), embossed on the blank glass side of an indium-tin-oxide (ITO)-coated 1.1 mm-thick glass, are used to enhance light extraction from organic light-emitting diodes (OLEDs) by {approx}100%, significantly higher than enhancements reported previously. The array design and size relative to the OLED pixel size appear to be responsible for this enhancement. The arrays are fabricated by very economical soft lithography imprinting of a polydimethylsiloxane (PDMS) mold (itself obtained from a Ni master stamp that is generated from holographic interference lithography of a photoresist) on a UV-curable polyurethane drop placed on the glass. Green and blue OLEDs are then fabricated on the ITO to complete the device. When the {mu}LA is {approx}15 x 15 mm{sup 2}, i.e., much larger than the {approx}3 x 3 mm{sup 2} OLED pixel, the electroluminescence (EL) in the forward direction is enhanced by {approx}100%. Similarly, a 19 x 25 mm{sup 2} {mu}LA enhances the EL extracted from a 3 x 3 array of 2 x 2 mm{sup 2} OLED pixels by 96%. Simulations that include the effects of absorption in the organic and ITO layers are in accordance with the experimental results and indicate that a thinner 0.7 mm thick glass would yield a {approx}140% enhancement.

  3. MoO3 as combined hole injection layer and tapered spacer in combinatorial multicolor microcavity organic light emitting diodes

    SciTech Connect (OSTI)

    Liu, R.; Xu, Chun; Biswas, Rana; Shinar, Joseph; Shinar, Ruth

    2011-09-01T23:59:59.000Z

    Multicolor microcavity ({mu}C) organic light-emitting diode (OLED) arrays were fabricated simply by controlling the hole injection and spacer MoO{sub 3} layer thickness. The normal emission was tunable from {approx}490 to 640 nm and can be further expanded. A compact, integrated spectrometer with two-dimensional combinatorial arrays of {mu}C OLEDs was realized. The MoO{sub 3} yields more efficient and stable devices, revealing a new breakdown mechanism. The pixel current density reaches {approx}4 A/cm{sup 2} and a maximal normal brightness {approx}140 000 Cd/m{sup 2}, which improves photoluminescence-based sensing and absorption measurements.

  4. UDC Develops Prototype High-Efficiency OLED Undercabinet Luminaire

    Broader source: Energy.gov [DOE]

    Universal Display Corporation (UDC) has demonstrated the real-world application of a novel lighting technology by developing two pre-prototype OLED undercabinet lighting systems that exceed 420 total lumens at an efficacy of more than 55 lm/W, with an estimated lifetime (LT70) in excess of 10,000 hours, and a color rendering index (CRI) greater than 85.

  5. Late Quaternary history of Washington Land, North Greenland OLE BENNIKE

    E-Print Network [OSTI]

    Ingólfsson, Ólafur

    Late Quaternary history of Washington Land, North Greenland OLE BENNIKE Bennike, O. 2002 (September): Late Quaternary history of Washington Land, North Greenland. Boreas, Vol. 31, 260­272. Oslo. ISSN 0300-9483. During the last glacial stage, Washington Land in western North Greenland was probably completely inun

  6. Roll-to-Roll Solution-Processible Small-Molecule OLEDs

    SciTech Connect (OSTI)

    Liu, Jie Jerry

    2012-07-31T23:59:59.000Z

    The objective of this program is to develop key knowledge and make critical connections between technologies needed to enable low-cost manufacturing of OLED lighting products. In particular, the program was intended to demonstrate the feasibility of making high performance Small-Molecule OLEDs (SM-OLED) using a roll-to-roll (R2R) wet-coating technique by addressing the following technical risks (1) Whether the wet-coating technique can provide high performance OLEDs, (2) Whether SM-OLED can be made in a R2R manner, (3) What are the requirements for coating equipment, and (4) Whether R2R OLEDs can have the same performance as the lab controls. The program has been managed and executed according to the Program Management Plan (PMP) that was first developed at the beginning of the program and further revised accordingly as the program progressed. Significant progress and risk reductions have been accomplished by the end of the program. Specific achievements include: (1) Demonstrated that wet-coating can provide OLEDs with high LPW and long lifetime; (2) Demonstrated R2R OLEDs can be as efficient as batch controls (Figure 1) (3) Developed & validated basic designs for key equipment necessary for R2R SM-OLEDs; (4) Developed know-hows & specifications on materials & ink formulations critical to wetcoating; (5) Developed key R2R processes for each OLED layer (6) Identified key materials and components such as flexible barrier substrates necessary for R2R OLEDs.

  7. Blue diode-pumped solid-state-laser based on ytterbium doped laser crystals operating on the resonance zero-phonon transition

    DOE Patents [OSTI]

    Krupke, William F. (Pleasanton, CA); Payne, Stephen A. (Castro Valley, CA); Marshall, Christopher D. (Livermore, CA)

    2001-01-01T23:59:59.000Z

    The invention provides an efficient, compact means of generating blue laser light at a wavelength near .about.493+/-3 nm, based on the use of a laser diode-pumped Yb-doped laser crystal emitting on its zero phonon line (ZPL) resonance transition at a wavelength near .about.986+/-6 nm, whose fundamental infrared output radiation is harmonically doubled into the blue spectral region. The invention is applied to the excitation of biofluorescent dyes (in the .about.490-496 nm spectral region) utilized in flow cytometry, immunoassay, DNA sequencing, and other biofluorescence instruments. The preferred host crystals have strong ZPL fluorecence (laser) transitions lying in the spectral range from .about.980 to .about.992 nm (so that when frequency-doubled, they produce output radiation in the spectral range from 490 to 496 nm). Alternate preferred Yb doped tungstate crystals, such as Yb:KY(WO.sub.4).sub.2, may be configured to lase on the resonant ZPL transition near 981 nm (in lieu of the normal 1025 nm transition). The laser light is then doubled in the blue at 490.5 nm.

  8. Barrier performance optimization of atomic layer deposited diffusion barriers for organic light emitting diodes using x-ray reflectivity investigations

    SciTech Connect (OSTI)

    Singh, Aarti, E-mail: aarti.singh@namlab.com; Schröder, Uwe [Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany)] [Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany); Klumbies, Hannes; Müller-Meskamp, Lars; Leo, Karl [Dresden Innovation Center Energy Efficiency, Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden (Germany)] [Dresden Innovation Center Energy Efficiency, Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden (Germany); Geidel, Marion; Knaut, Martin; Hoßbach, Christoph; Albert, Matthias [Institute of Semiconductor and Microsystems Technology, Technische Universität Dresden, 01187 Dresden (Germany)] [Institute of Semiconductor and Microsystems Technology, Technische Universität Dresden, 01187 Dresden (Germany); Mikolajick, Thomas [Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany) [Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany); Institute of Semiconductor and Microsystems Technology, Technische Universität Dresden, 01187 Dresden (Germany)

    2013-12-02T23:59:59.000Z

    The importance of O{sub 3} pulse duration for encapsulation of organic light emitting diodes (OLEDs) with ultra thin inorganic atomic layer deposited Al{sub 2}O{sub 3} layers is demonstrated for deposition temperatures of 50 °C. X-ray reflectivity (XRR) measurements show that O{sub 3} pulse durations longer than 15?s produce dense and thin Al{sub 2}O{sub 3} layers. Correspondingly, black spot growth is not observed in OLEDs encapsulated with such layers during 91 days of aging under ambient conditions. This implies that XRR can be used as a tool for process optimization of OLED encapsulation layers leading to devices with long lifetimes.

  9. MATERIALS DEGRADATION ANALYSIS AND DEVELOPMENT TO ENABLE ULTRA LOW COST, WEB-PROCESSED WHITE P-OLED FOR SSL

    SciTech Connect (OSTI)

    DR. DEVIN MACKENZIE

    2011-12-13T23:59:59.000Z

    Progress over Phase II of DE-FG02-07ER86293 'Materials Degradation Analysis and Development to Enable Ultra Low Cost, Web-Processed White P-OLED for SSL' was initially rapid in terms of device performance improvements. We exceeded our device luminance lifetime goals for printed flexible white OLEDs as laid out in our project proposal. Our Phase II performance target was to demonstrate >1500 hours luminance lifetime at 100 Cd/m2 from a printed flexible device. We now have R&D devices well in excess of 8000 hrs lifetime at 100 Cd/m2, tested in air. We also were able to produce devices which met the voltage target of >1500 hours below 15V operation. After completing the initial performance milestones, we went on to focus on color-related degradation issues which were cited as important to commercialization of the technology by our manufacturing partners. We also put additional focus on cathode work as the active material development that occurred over the STTR time period required an adaptation of the cathode from the original cathode formulations which were developed based on previous generation active layer materials. We were able to improve compatibility of the cathode with some of the newer generation active layer materials and improve device yield and voltage behavior. An additional objective of the initial Phase II was to further develop the underlying manufacturing technology and real-life product specifications. This is a key requirement that must be met to ensure eventual commercialization of this DOE-funded technology. The link between commercial investment for full commercialization and R&D efforts in OLED solid State Lighting is often a large one. Add-Vision's lower cost, printed OLED manufacturing approach is an attraction, but close engagement with manufacturing partners and addressing customer specifications is a very important link. Manufacturing technology encompasses development of moisture reduction encapsulation technology, improved cost performance, and reductions in operating voltage through thinner and higher uniformity active device layers. We have now installed a pilot encapsulation system at AVI for controlled, high throughput lamination encapsulation of flexible OLEDs in a novel process. Along with this, we have developed, with our materials supply partners, adhesives, barrier films and other encapsulation materials and we are showing total air product lifetimes in the 2-4 years range from a process consistent with our throughput goals of {approx}1M device per month ({approx}30,000 sq. ft. of processed OLEDs). Within the last year of the project, we have been working to introduce the manufacturing improvements made in our LEP deposition and annealing process to our commercial partners. Based on the success of this, a pilot scale-up program was begun. During this process, Add-Vision was acquired by a strategic partner, in no small part, because of the promise of future success of the technology as evidenced by our commercial partners pilot scale-up plans. Overall, the performance, manufacturing and product work in this project has been successful. Additional analysis and device work at LBL has also shown a unique adhesion change with device bias stressing which may result from active layer polymer cross-linking during bias stressing of device. It was shown that even small bias stresses, as a fraction of a full device lifetime stress period, result in measurable chemical change in the device. Further work needs to be conducted to fully understand the chemical nature of this interaction. Elucidation of this effect would enable doped OLED formulation to be engineered to suppress this effect and further extend lifetimes and reduce voltage climb.

  10. GEA Refrigeration Technologies / GEA Refrigeration Germany GmbH Wolfgang Dietrich / Dr. Ole Fredrich

    E-Print Network [OSTI]

    Oak Ridge National Laboratory

    GEA Refrigeration Technologies / GEA Refrigeration Germany GmbH Wolfgang Dietrich / Dr. Ole Technologies3 Achema 2012 // heat pumps using ammonia Industrial demand on heat in Germany Heatdemandin

  11. Development and Utilization of Host Materials for White Phosphorescent Organic Light-Emitting Diodes

    SciTech Connect (OSTI)

    Tang, Ching; Chen, Shaw

    2013-05-31T23:59:59.000Z

    Our project was primarily focused on the MYPP 2015 goal for white phosphorescent organic devices (PhOLEDs or phosphorescent organic light-emitting diodes) for solid-state lighting with long lifetimes and high efficiencies. Our central activity was to synthesize and evaluate a new class of host materials for blue phosphors in the PhOLEDs, known to be a weak link in the device operating lifetime. The work was a collaborative effort between three groups, one primarily responsible for chemical design and characterization (Chen), one primarily responsible for device development (Tang) and one primarily responsible for mechanistic studies and degradation analysis (Rothberg). The host materials were designed with a novel architecture that chemically links groups with good ability to move electrons with those having good ability to move “holes” (positive charges), the main premise being that we could suppress the instability associated with physical separation and crystallization of the electron conducting and hole conducting materials that might cause the devices to fail. We found that these materials do prevent crystallization and that this will increase device lifetimes but that efficiencies were reduced substantially due to interactions between the materials creating new low energy “charge transfer” states that are non-luminescent. Therefore, while our proposed strategy could in principle improve device lifetimes, we were unable to find a materials combination where the efficiency was not substantially compromised. In the course of our project, we made several important contributions that are peripherally related to the main project goal. First, we were able to prepare the proposed new family of materials and develop synthetic routes to make them efficiently. These types of materials that can transport both electrons and holes may yet have important roles to play in organic device technology. Second we developed an important new method for controlling the deposition profile of material so that arbitrary concentration gradients can be implemented in layers with mixed composition. These concentration profiles are known to increase device efficiency and longevity and we confirmed that experimentally. Third, we investigated a new method for analyzing degradation in devices using mass spectrometry to look for degradation products. We showed that these methods are not simple to interpret unambiguously and need to be used with caution.

  12. Solid-state semiconductors are better alternatives to arc-lamps for efficient and uniform illumination in minimal access surgery

    E-Print Network [OSTI]

    Rosso, Lula

    of technical and ergonomic limitations. White light-emitting diodes (LEDs) are energy-efficient solid- state Illumination Á Light-emitting diode Á Minimal access surgery Á Solid-state semiconductor In the 1950s

  13. DOE Solid-State Lighting Program Overview Brochure

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Lighting Program Shaping the Future of Solid-State Lighting Today, LED (light emitting diode) technologies illuminate grocery display cases, make parking garages and...

  14. Top-emission Si-based phosphor organic light emitting diode with Au doped ultrathin n-Si film anode and bottom Al mirror

    SciTech Connect (OSTI)

    Li, Y. Z.; Xu, W. J.; Ran, G. Z. [State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Qin, G. G. [State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Key Lab of Semiconductor Materials, CAS, Beijing 100083 (China)

    2009-07-20T23:59:59.000Z

    We report a highly efficient top-emission Si-based phosphor organic light emitting diode (PhOLED) with an ultrathin polycrystalline n-Si:Au film anode and a bottom Al mirror. This anode is formed by magnetron sputtering followed by Ni induced crystallization and then Au diffusion. By optimizing the thickness of the n-Si:Au film anode, the Au diffusion temperature, and the other parameters of the PhOLED, the highest current and power efficiencies of the n-Si:Au film anode PhOLED reached 85{+-}9 cd/A and 80{+-}8 lm/W, respectively, corresponding to an external quantum efficiency of 21{+-}2% and a power conversion efficiency of 15{+-}2%, respectively, which are about 60% and 110% higher than those of the indium tin oxide anode counterpart and 70% and 50% higher than those of the bulk n{sup +}-Si:Au anode counterpart, respectively.

  15. Preparation of CaO as OLED getter material through control of crystal growth of CaCO{sub 3} by block copolymers in aqueous solution

    SciTech Connect (OSTI)

    Park, Jae-Hyung [Department of Chemical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Oh, Seong-Geun [Department of Chemical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)], E-mail: seongoh@hanyang.ac.kr

    2009-01-08T23:59:59.000Z

    As the starting materials of organic light-emitting diode (OLED) getter, calcium carbonate (CaCO{sub 3}) particles with various shapes and crystal structures have been successfully prepared with additives (L64 or PEGPG), which contain blocks of poly(ethylene oxide) (PEO) and poly(propylene oxide) (PPO). These CaCO{sub 3} particles were calcinated into highly crystalline calcium oxide (CaO) nanoparticles with high capacity of water adsorption up to 14.23 wt.%. The CaCO{sub 3} and CaO particles prepared at various conditions were characterized using the field emission scanning electron microscopy (FE-SEM), Fourier transform infrared microscopy (FT-IR), X-ray powder diffraction (XRD), and dynamic vapor sorption (DVS) method.

  16. Vortex diode jet

    DOE Patents [OSTI]

    Houck, Edward D. (Idaho Falls, ID)

    1994-01-01T23:59:59.000Z

    A fluid transfer system that combines a vortex diode with a jet ejector to transfer liquid from one tank to a second tank by a gas pressurization method having no moving mechanical parts in the fluid system. The vortex diode is a device that has a high resistance to flow in one direction and a low resistance to flow in the other.

  17. Numerical study of the influence of applied voltage on the current balance factor of single layer organic light-emitting diodes

    SciTech Connect (OSTI)

    Lu, Fei-ping, E-mail: lufp-sysu@163.com; Liu, Xiao-bin; Xing, Yong-zhong [College of Physics and Information Science, Tianshui Normal University, Tianshui 741001 (China)

    2014-04-28T23:59:59.000Z

    Current balance factor (CBF) value, the ratio of the recombination current density and the total current density of a device, has an important function in fluorescence-based organic light-emitting diodes (OLEDs), as well as in the performance of the organic electrophosphorescent devices. This paper investigates the influence of the applied voltage of a device on the CBF value of single layer OLED based on the numerical model of a bipolar single layer OLED with organic layer trap free and without doping. Results show that the largest CBF value can be achieved when the electron injection barrier (?{sub n}) is equal to the hole injection barrier (?{sub p}) in the lower voltage region at any instance. The largest CBF in the higher voltage region can be achieved in the case of ?{sub n}?>??{sub p} under the condition of electron mobility (?{sub 0n}) > hole mobility (?{sub 0p}), whereas the result for the case of ?{sub 0n}?OLED working mechanism and help in the future fabrication of high efficiency OLEDs.

  18. Next Generation Hole Injection/Transport Nano-Composites for High Efficiency OLED Development

    SciTech Connect (OSTI)

    King Wang

    2009-07-31T23:59:59.000Z

    The objective of this program is to use a novel nano-composite material system for the OLED anode coating/hole transport layer. The novel anode coating is intended to significantly increase not only hole injection/transport efficiency, but the device energy efficiency as well. Another goal of the Core Technologies Program is the optimization and scale-up of air-stable and cross-linkable novel HTL nano-composite materials synthesis and the development of low-cost, large-scale mist deposition processes for polymer OLED fabrication. This proposed technology holds the promise to substantially improve OLED energy efficiency and lifetime.

  19. Diode pumped alkali vapor fiber laser

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Beach, Raymond J. (Livermore, CA); Dawson, Jay W. (Livermore, CA); Krupke, William F. (Pleasanton, CA)

    2007-10-23T23:59:59.000Z

    A method and apparatus is provided for producing near-diffraction-limited laser light, or amplifying near-diffraction-limited light, in diode pumped alkali vapor photonic-band-gap fiber lasers or amplifiers. Laser light is both substantially generated and propagated in an alkali gas instead of a solid, allowing the nonlinear and damage limitations of conventional solid core fibers to be circumvented. Alkali vapor is introduced into the center hole of a photonic-band-gap fiber, which can then be pumped with light from a pump laser and operated as an oscillator with a seed beam, or can be configured as an amplifier.

  20. Diode pumped alkali vapor fiber laser

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Beach, Raymond J. (Livermore, CA); Dawson, Jay W. (Livermore, CA); Krupke, William F. (Pleasanton, CA)

    2006-07-26T23:59:59.000Z

    A method and apparatus is provided for producing near-diffraction-limited laser light, or amplifying near-diffraction-limited light, in diode pumped alkali vapor photonic-band-gap fiber lasers or amplifiers. Laser light is both substantially generated and propagated in an alkali gas instead of a solid, allowing the nonlinear and damage limitations of conventional solid core fibers to be circumvented. Alkali vapor is introduced into the center hole of a photonic-band-gap fiber, which can then be pumped with light from a pump laser and operated as an oscillator with a seed beam, or can be configured as an amplifier.

  1. Ruggedized microchannel-cooled laser diode array with self-aligned microlens

    DOE Patents [OSTI]

    Freitas, Barry L.; Skidmore, Jay A.

    2003-11-11T23:59:59.000Z

    A microchannel-cooled, optically corrected, laser diode array is fabricated by mounting laser diode bars onto Si surfaces. This approach allows for the highest thermal impedance, in a ruggedized, low-cost assembly that includes passive microlens attachment without the need for lens frames. The microlensed laser diode array is usable in all solid-state laser systems that require efficient, directional, narrow bandwidth, high optical power density pump sources.

  2. Sixth International Conference on Solid State Lighting, edited by Ian T. Ferguson, Nadarajah Narendran, Tsunemasa Taguchi, Ian E. Ashdown,

    E-Print Network [OSTI]

    Weiss, Sharon

    commercial white light emitting diodes (LEDs) rely on complicated fabrication methods to produce white light: Cadmium Selenide, Nanocrystal, Photoluminescence, Phosphor, White Light, Light Emitting Diode, LED 1. INTRODUCTION 1.1 Solid state lighting Solid state lighting, in the form of white light emitting diodes (LEDs

  3. Novel phosphors for solid state lighting

    E-Print Network [OSTI]

    Furman, Joshua D

    2010-11-16T23:59:59.000Z

    Solid state white light emitting diode lighting devices outperform conventional light sources in terms of lifetime, durability, and lumens per watt. However, the capital contribution is still to high to encourage widespread adoption. Furthermore...

  4. Efficacy of 45 lm/W Achieved in White OLED

    Broader source: Energy.gov [DOE]

    Universal Display Corporation (UDC) successfully demonstrated an all phosphorescent white organic light emitting diode (WOLED™) with a power efficacy of 45 lm/W at 1,000 cd/m2. This high-efficacy device was enabled by lowering the device operating voltage, increasing the outcoupling efficiency to ~40% from ~20%, and by incorporating highly efficient phosphorescent emitters that are capable of converting nearly all current passing through a WOLED into light.

  5. Performance enhancement of organic light-emitting diodes by chlorine plasma treatment of indium tin oxide

    SciTech Connect (OSTI)

    Cao, X. A.; Zhang, Y. Q. [Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, West Virginia 26506 (United States)

    2012-04-30T23:59:59.000Z

    The characteristics of green phosphorescent organic light-emitting diodes (OLEDs) fabricated on ITO/glass substrates pretreated with low-energy O{sub 2} and Cl{sub 2} plasma were compared. At 20 mA/cm{sup 2}, the OLEDs with O{sub 2} and Cl{sub 2} plasma-treated indium tin oxide (ITO) had voltages of 9.6 and 7.6 eV, and brightness of 9580 and 12380 cd/m{sup 2}, respectively. At {approx}10{sup 4} cd/m{sup 2}, the latter had a 30% higher external quantum efficiency and a 74% higher power efficiency. Photoelectron spectroscopies revealed that Cl{sub 2} plasma treatment created stable In-Cl bonds and raised the work function of ITO by up to 0.9 eV. These results suggest that the better energy level alignment at the chlorinated ITO/organic interface enhances hole injection, leading to more efficient and more reliable operation of the OLEDs. The developed plasma chlorination process is very effective for surface modification of ITO and compatible with the fabrication of various organic electronics.

  6. Conference 5739, SPIE International Symposium Integrated Optoelectronic Devices, 22-27 Jan 2005, San Jose, CA Development of high power green light emitting diode dies in

    E-Print Network [OSTI]

    Wetzel, Christian M.

    , San Jose, CA Development of high power green light emitting diode dies in piezoelectric Ga in green light emitting diodes is one of the big challenges towards all-solid- state lighting. The prime,3], and commercialization [4,5] of high brightness light emitting diodes LEDs has led to a 1.82 Billion-$/year world market

  7. Materials for solid state lighting

    SciTech Connect (OSTI)

    Johnson, S.G.; Simmons, J.A.

    2002-03-26T23:59:59.000Z

    Dramatic improvement in the efficiency of inorganic and organic light emitting diodes (LEDs and OLEDs) within the last decade has made these devices viable future energy efficient replacements for current light sources. However, both technologies must overcome major technical barriers, requiring significant advances in material science, before this goal can be achieved. Attention will be given to each technology associated with the following major areas of material research: (1) material synthesis, (2) process development, (3) device and defect physics, and (4) packaging. The discussion on material synthesis will emphasize the need for further development of component materials, including substrates and electrodes, necessary for improving device performance. The process technology associated with the LEDs and OLEDs is very different, but in both cases it is one factor limiting device performance. Improvements in process control and methodology are expected to lead to additional benefits of higher yield, greater reliability and lower costs. Since reliability and performance are critical to these devices, an understanding of the basic physics of the devices and device failure mechanisms is necessary to effectively improve the product. The discussion will highlight some of the more basic material science problems remaining to be solved. In addition, consideration will be given to packaging technology and the need for the development of novel materials and geometries to increase the efficiencies and reliability of the devices. The discussion will emphasize the performance criteria necessary to meet lighting applications, in order to illustrate the gap between current status and market expectations for future product.

  8. Applications of microlens-conditioned laser diode arrays

    SciTech Connect (OSTI)

    Beach, R.J.; Emanuel, M.A.; Freitas, B.L. [and others

    1995-01-01T23:59:59.000Z

    The ability to condition the radiance of laser diodes using shaped-fiber cylindrical-microlens technology has dramatically increased the number of applications that can be practically engaged by diode laser arrays. Lawrence Livermore National Laboratory (LLNL) has actively pursued optical efficiency and engineering improvements in this technology in an effort to supply large radiance-conditioned laser diode array sources for its own internal programs. This effort has centered on the development of a modular integrated laser diode packaging technology with the goal of enabling the simple and flexible construction of high average power, high density, two-dimensional arrays with integrated cylindrical microlenses. Within LLNL, the principal applications of microlens-conditioned laser diode arrays are as high intensity pump sources for diode pumped solid state lasers (DPSSLs). A simple end-pumping architecture has been developed and demonstrated that allows the radiation from microlens-conditioned, two-dimensional diode array apertures to be efficiently delivered to the end of rod lasers. To date, pump powers as high as 2.5 kW have been delivered to 3 mm diameter laser rods. Such high power levels are critical for pumping solid state lasers in which the terminal laser level is a Stark level lying in the ground state manifold. Previously, such systems have often required operation of the solid state gain medium at low temperature to freeze out the terminal laser Stark level population. The authors recently developed high intensity pump sources overcome this difficulty by effectively pumping to much higher inversion levels, allowing efficient operation at or near room temperature. Because the end-pumping technology is scalable in absolute power, the number of rare-earth ions and transitions that can be effectively accessed for use in practical DPSSL systems has grown tremendously.

  9. Comparison of light out-coupling enhancements in single-layer blue-phosphorescent organic light emitting diodes using small-molecule or polymer hosts

    SciTech Connect (OSTI)

    Chang, Yung-Ting [Institute of Chemistry, Academia Sinica, Taipei, Taiwan 11529, Taiwan (China); Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan 10617, Taiwan (China); Liu, Shun-Wei [Department of Electronic Engineering, Mingchi University of Technology, New Taipei, Taiwan 24301, Taiwan (China); Yuan, Chih-Hsien; Lee, Chih-Chien [Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan 10607, Taiwan (China); Ho, Yu-Hsuan; Wei, Pei-Kuen [Research Center for Applied Science Academia Sinica, Taipei, Taiwan 11527, Taiwan (China); Chen, Kuan-Yu [Chilin Technology Co., LTD, Tainan City, Taiwan 71758, Taiwan (China); Lee, Yi-Ting; Wu, Min-Fei; Chen, Chin-Ti, E-mail: cchen@chem.sinica.edu.tw, E-mail: chihiwu@cc.ee.ntu.edu.tw [Institute of Chemistry, Academia Sinica, Taipei, Taiwan 11529, Taiwan (China); Wu, Chih-I, E-mail: cchen@chem.sinica.edu.tw, E-mail: chihiwu@cc.ee.ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan 10617, Taiwan (China)

    2013-11-07T23:59:59.000Z

    Single-layer blue phosphorescence organic light emitting diodes (OLEDs) with either small-molecule or polymer hosts are fabricated using solution process and the performances of devices with different hosts are investigated. The small-molecule device exhibits luminous efficiency of 14.7?cd/A and maximum power efficiency of 8.39?lm/W, which is the highest among blue phosphorescence OLEDs with single-layer solution process and small molecular hosts. Using the same solution process for all devices, comparison of light out-coupling enhancement, with brightness enhancement film (BEF), between small-molecule and polymer based OLEDs is realized. Due to different dipole orientation and anisotropic refractive index, polymer-based OLEDs would trap less light than small molecule-based OLEDs internally, about 37% better based simulation results. In spite of better electrical and spectroscopic characteristics, including ambipolar characteristics, higher carrier mobility, higher photoluminescence quantum yield, and larger triplet state energy, the overall light out-coupling efficiency of small molecule-based devices is worse than that of polymer-based devices without BEF. However, with BEF for light out-coupling enhancement, the improved ratio in luminous flux and luminous efficiency for small molecule based device is 1.64 and 1.57, respectively, which are significantly better than those of PVK (poly-9-vinylcarbazole) devices. In addition to the theoretical optical simulation, the experimental data also confirm the origins of differential light-outcoupling enhancement. The maximum luminous efficiency and power efficiency are enhanced from 14.7?cd/A and 8.39?lm/W to 23?cd/A and 13.2?lm/W, respectively, with laminated BEF, which are both the highest so far for single-layer solution-process blue phosphorescence OLEDs with small molecule hosts.

  10. Driving conditions dependence of magneto-electroluminescence in tri-(8-hydroxyquinoline)-aluminum based organic light emitting diodes

    E-Print Network [OSTI]

    Peng, Qiming; Li, Xianjie; Li, Mingliang; Li, Feng

    2011-01-01T23:59:59.000Z

    we investigated the magneto-electroluminescence (MEL) in tri-(8-hydroxyquinoline)-aluminum based organic light-emitting diodes (OLEDs) through the steady-state and transient method simultaneously. The MELs show the great different behaviors when we turn the driving condition from a constant voltage to a pulse voltage. For devices driven by the constant voltage, the MELs are similar with the literature data; for devices driven by the pulse voltage, the MELs are quite different, they firstly increase to a maximum then decrease as the magnetic field increases continuously. Negative MELs can be seen when both the magnetic field and driving voltage are high enough.

  11. Modular package for cooling a laser diode array

    DOE Patents [OSTI]

    Mundinger, David C. (Stockton, CA); Benett, William J. (Livermore, CA); Beach, Raymond J. (Livermore, CA)

    1992-01-01T23:59:59.000Z

    A laser diode array is disclosed that includes a plurality of planar packages and active cooling. The laser diode array may be operated in a long duty cycle, or in continuous operation. A laser diode bar and a microchannel heat sink are thermally coupled in a compact, thin planar package having the laser diode bar located proximate to one edge. In an array, a number of such thin planar packages are secured together in a stacked configuration, in close proximity so that the laser diodes are spaced closely. The cooling means includes a microchannel heat sink that is attached proximate to the laser bar so that it absorbs heat generated by laser operation. To provide the coolant to the microchannels, each thin planar package comprises a thin inlet manifold and a thin outlet manifold connected to an inlet corridor and an outlet corridor. The inlet corridor comprises a hole extending through each of the packages in the array, and the outlet corridor comprises a hole extending through each of the packages in the array. The inlet and outlet corridors are connected to a conventional coolant circulation system. The laser diode array with active cooling has application as an optical pump for high power solid state lasers. Further, it can be incorporated in equipment such as communications devices and active sensors, and in military and space applications, and it can be useful in applications having space constraints and energy limitations.

  12. Application of an all-solid-state diode-laser-based sensor for carbon monoxide detection by optical absorption in the 4.4 ? 4.8 µm spectral region 

    E-Print Network [OSTI]

    Rodolfo, Barron Jimenez

    2005-02-17T23:59:59.000Z

    An all-solid-state continuous-wave (cw) laser system for mid-infrared absorption measurements of the carbon monoxide (CO) molecule has been developed and demonstrated. The single-mode, tunable output of an external-cavity ...

  13. Response comparison of a single-diode electronic dosimeter, a three-diode electronic dosimeter, and a conventional four-filter TLD assembly in several irradiation environments

    E-Print Network [OSTI]

    Charlton, Michael Aaron

    1995-01-01T23:59:59.000Z

    dosimeters is immediate readout capability. The advent of solid-state radiation detectors has made electronic dosimeters the choice for the secondary dosimeter in many facilities. The electronic dosimeter has additional direct-readout capabilities... diode, rather than a GM tube, as the radiation detector. Silicon diode detectors require only a few volts of applied bias which increases the battery life to the order of years. In addition to consuming less power, the new electronic dosimeters...

  14. Resonance et contr^ole en cavite ouverte Jer^ome Hoepffner

    E-Print Network [OSTI]

    Hoepffner, Jérôme

    R´esonance et contr^ole en cavit´e ouverte J´er^ome Hoepffner KTH, Sweden Avec Espen °Akervik, Uwe) From Rowley et al, JFM 2002 Self sustained cycle: perturbation growth pressure wave new perturbation localised and where are they sensitive ? #12;Optimal transient energy growth from initial conditions System

  15. The Laser DiodeThe Laser Diode Jason HillJason Hill

    E-Print Network [OSTI]

    La Rosa, Andres H.

    a Laser Diode Works Edge Emitting Laser Diode Operates similar to a Light Emitting DiodeOperates similar to a Light Emitting Diode Active medium is a semiconductor pActive medium is a semiconductor p--n junctionn Operates similar to a Light Emitting DiodeOperates similar to a Light Emitting Diode Active medium

  16. Diamond Schottky barrier diodes

    E-Print Network [OSTI]

    Brezeanu, Mihai

    2008-03-11T23:59:59.000Z

    Laboratory, to Suat for showing La Dolce vita, to Mash-hud and the right to ask questions, to Marina Antoniou and her future Romanian villa, to Zeeshan and our twin PhD-routes, to Hatice and her heinous Bukowskian nights To Alex and our Internautian nights... ....................... .. . .............. ....... ..... ......... 20 2.4.1 Introduction. . .. . .. . . . . .. . ...... ... . .. . .. . ... ..... . .. . .. . .............. 20 2.4.2 Schottky diodes...... ............ .................................... 20 2.4.3 Field effect transistors...

  17. LASER DIODE TECHNOLOGY AND APPLICATIONS Submitted to

    E-Print Network [OSTI]

    La Rosa, Andres H.

    and a normal diode and a light emitting diode. I will also define the terms homojunction and heterojunction, and is the main source of light in a light-emitting diode. Under suitable conditions, the electron and the hole

  18. Toward ZnO Light Emitting Diode

    E-Print Network [OSTI]

    Liu, Jianlin

    2008-01-01T23:59:59.000Z

    applications such as light emitting diodes (LEDs) and laser009 "Toward ZnO Light Emitting Diode" Jianlin Liu July 2008Title: “Toward ZnO Light Emitting Diode” Sponsor: UC Energy

  19. Seventh International Conference on Solid State Lighting, Edited by Ian T. Ferguson, Nadarajah Narendran, Tsunemasa Taguchi, Ian E. Ashdown,

    E-Print Network [OSTI]

    Weiss, Sharon

    Selenide, Nanocrystal, Photoluminescence, Phosphor, White Light, Light Emitting Diode, LED 1. INTRODUCTION 1.1 Solid state lighting and white-light LEDs The use of white light emitting diodes (LEDs emitting diodes[11] , though they are a less mature technology as compared to inorganic semiconductor

  20. MidAmerican Energy (Electric) - Municipal Solid-State Lighting...

    Open Energy Info (EERE)

    must be an Iowa electric governmental customer of MidAmerican Energy Company. Light-emitting diode and induction types of solid state lighting (SSL) qualify under this program....

  1. Sandia National Laboratories: solid-state lighting technology

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in the ... Optical performance of top-down fabricated InGaNGaN nanorod light emitting diode arrays On November 30, 2011, in Energy, Energy Efficiency, Solid-State Lighting...

  2. Alternative p-doped hole transport material for low operating voltage and high efficiency organic light-emitting diodes

    SciTech Connect (OSTI)

    Murawski, Caroline, E-mail: caroline.murawski@iapp.de; Fuchs, Cornelius; Hofmann, Simone; Leo, Karl [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Str. 1, 01062 Dresden (Germany); Gather, Malte C. [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Str. 1, 01062 Dresden (Germany); SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, KY16 9SS Scotland (United Kingdom)

    2014-09-15T23:59:59.000Z

    We investigate the properties of N,N?-[(Diphenyl-N,N?-bis)9,9,-dimethyl-fluoren-2-yl]-benzidine (BF-DPB) as hole transport material (HTL) in organic light-emitting diodes (OLEDs) and compare BF-DPB to the commonly used HTLs N,N,N?,N?-tetrakis(4-methoxyphenyl)-benzidine (MeO-TPD), 2,2?,7,7?-tetrakis(N,N?-di-p-methylphenylamino)-9,9?-spirobifluorene (Spiro-TTB), and N,N?-di(naphtalene-1-yl)-N,N?-diphenylbenzidine (NPB). The influence of 2,2?-(perfluoronaphthalene-2,6-diylidene)dimalononitrile (F6-TCNNQ p-dopant) concentration in BF-DPB on the operation voltage and efficiency of red and green phosphorescent OLEDs is studied; best results are achieved at 4?wt. % doping. Without any light extraction structure, BF-DPB based red (green) OLEDs achieve a luminous efficacy of 35?.1?lm/W (74?.0?lm/W) at 1000?cd/m{sup 2} and reach a very high brightness of 10?000 cd/m{sup 2} at a very low voltage of 3.2 V (3.1 V). We attribute this exceptionally low driving voltage to the high ionization potential of BF-DPB which enables more efficient hole injection from BF-DPB to the adjacent electron blocking layer. The high efficiency and low driving voltage lead to a significantly lower luminous efficacy roll-off compared to the other compounds and render BF-DPB an excellent HTL material for highly efficient OLEDs.

  3. Solution-Processable Transparent Conductive Hole Injection Electrode for OLED SSL

    SciTech Connect (OSTI)

    None

    2012-07-15T23:59:59.000Z

    An interconnected network of silver nanowires has been used as transparent anode in OLED devices. This layer was deposited by spin-coating and slot-die coating from an aqueous nanowire suspension. The sheet resistance of the film was 10ohms/sq with a transmission (including the glass substrate) of higher than 85%. The first phase of the project focused on the implementation of this nanowire layer with a hole-injection-layer (HIL) which has been developed at Plextronics and has been shown to provide good stability and efficiency in conventional OLED devices. We modified the HIL solution such that it coated reasonably well with suitable surface morphology so that actual devices can be manufactured. During the second phase we investigated the hole-injection and stability of hole-onlydevices. We determined that the use of the nanowire network as anode does not introduce an additional degradation mechanism since the observed device characteristics did not differ from those made with ITO anode. We then proceeded to make actual OLED devices with this nanowire / HIL stack and achieved device characteristics similar state-of-the-art OLED devices with a single junction. In order to gain traction with potential OLED manufacturers, we decided to contract Novaled to prepare large-area demonstrators for us. For these devices, we used an allevaporated stack, i.e. we did use Novaledâ??s HIL material instead of Plextronicsâ??. We successfully fabricated demonstrators with an area of 25cm2 with a double or triple junction stack. Minor stack optimizations were necessary to achieve efficacies and lifetime equivalent with ITO devices made with the same devices stack. Due to the reduced microcavity effect, the color of the emitted light is significantly more stable with respect to the viewing angle compared to ITO devices. This fact in conjunction with the promise of lower production cost due to the elimination of the ITO sputtering process and the direct patterning of the anode layer are the obvious advantages of this technology. The project has shown that this nanowire technology is a viable option to achieve OLED devices with good lifetime and efficiency and we are currently working with manufacturers to utilize this technology in a production setting.

  4. High density, optically corrected, micro-channel cooled, v-groove monolithic laser diode array

    DOE Patents [OSTI]

    Freitas, B.L.

    1998-10-27T23:59:59.000Z

    An optically corrected, micro-channel cooled, high density laser diode array achieves stacking pitches to 33 bars/cm by mounting laser diodes into V-shaped grooves. This design will deliver > 4kW/cm{sup 2} of directional pulsed laser power. This optically corrected, micro-channel cooled, high density laser is usable in all solid state laser systems which require efficient, directional, narrow bandwidth, high optical power density pump sources. 13 figs.

  5. High density, optically corrected, micro-channel cooled, v-groove monolithic laser diode array

    DOE Patents [OSTI]

    Freitas, Barry L. (Livermore, CA)

    1998-01-01T23:59:59.000Z

    An optically corrected, micro-channel cooled, high density laser diode array achieves stacking pitches to 33 bars/cm by mounting laser diodes into V-shaped grooves. This design will deliver>4kW/cm2 of directional pulsed laser power. This optically corrected, micro-channel cooled, high density laser is usable in all solid state laser systems which require efficient, directional, narrow bandwidth, high optical power density pump sources.

  6. Sjldne fugle i Danmark og Grnland i 2005 OLE AMSTRUP, ALEX SAND FRICH, TIM HESSELBALLE HANSEN, HENRIK HAANING NIELSEN,

    E-Print Network [OSTI]

    Thorup, Kasper

    Sjældne fugle i Danmark og Grønland i 2005 OLE AMSTRUP, ALEX SAND FRICH, TIM HESSELBALLE HANSEN færdigbehandlede sager fra Danmark, heraf 141 fra 2005. Heri ind- går 8 sager, som SU har behandlet på opfordring

  7. Molecular Orbital Study of the First Excited State of the OLED Material Tris(8-hydroxyquinoline)aluminum(III)

    E-Print Network [OSTI]

    Schlegel, H. Bernhard

    Molecular Orbital Study of the First Excited State of the OLED Material Tris(8-hydroxyquinoline)aluminum, Michigan 48202 Received February 6, 2001. Revised Manuscript Received May 16, 2001 Tris(8-hydroxyquinoline)aluminum

  8. Thin planar package for cooling an array of edge-emitting laser diodes

    DOE Patents [OSTI]

    Mundinger, David C. (Stockton, CA); Benett, William J. (Livermore, CA)

    1992-01-01T23:59:59.000Z

    A laser diode array is disclosed that includes a plurality of planar assemblies and active cooling of each assembly. The laser diode array may be operated in a long duty cycle, or in continuous operation. A laser diode bar and a microchannel heat sink are thermally coupled in a compact, thin planar assembly having the laser diode bar located proximate to one edge. In an array, a number of such thin planar assemblies are secured together in a stacked configuration, in close proximity so that the laser diodes are spaced closely. The cooling means includes a microchannel heat sink proximate to the laser diode bar to absorb heat generated by laser operation. To provide the coolant to the microchannels, each thin planar assembly comprises passageways that connect the microchannels to inlet and outlet corridors. Each inlet passageway may comprise a narrow slot that directs coolant into the microchannels and increases the velocity of flow therethrough. The corridors comprises holes extending through each of the assemblies in the array. The inlet and outlet corridors are connected to a conventional coolant circulation system. The laser diode array with active cooling has applications as an optical pump for high power solid state lasers, or by mating the diodes with fiber optic lenses. Further, the arrays can be useful in applications having space constraints and energy limitations, and in military and space applications. The arrays can be incorporated in equipment such as communications devices and active sensors.

  9. Stacked white OLED having separate red, green and blue sub-elements

    DOE Patents [OSTI]

    Forrest, Stephen; Qi, Xiangfei; Slootsky, Michael

    2014-07-01T23:59:59.000Z

    The present invention relates to efficient organic light emitting devices (OLEDs). The devices employ three emissive sub-elements, typically emitting red, green and blue, to sufficiently cover the visible spectrum. Thus, the devices may be white-emitting OLEDs, or WOLEDs. Each sub-element comprises at least one organic layer which is an emissive layer--i.e., the layer is capable of emitting light when a voltage is applied across the stacked device. The sub-elements are vertically stacked and are separated by charge generating layers. The charge-generating layers are layers that inject charge carriers into the adjacent layer(s) but do not have a direct external connection.

  10. Solution-Procesed Small-Molecule OLED Luminaire for Interior Illumination

    SciTech Connect (OSTI)

    Parker, Ian

    2012-02-29T23:59:59.000Z

    Prototype lighting panels and luminaires were fabricated using DuPont Displaysâ?? solution-processed small-molecule OLED technology. These lighting panels were based on a spatially-patterned, 3-color design, similar in concept to an OLED display panel, with materials chosen to maximize device efficacy. The majority of the processing steps take place in air (rather than high vacuum). Optimization of device architecture, processing and construction was undertaken, with a final prototype design of 50 cm{sup 2} being fabricated and tested. Performance of these panels reached 35 lm/W at illuminant-A. A unique feature of this technology is the ability to color tune the emission, and color temperatures ranging from 2700 to > 6,500K were attained in the final build. Significant attention was paid to low-cost fabrication techniques.

  11. White organic light-emitting diodes with an ultra-thin premixed emitting layer

    E-Print Network [OSTI]

    Jeon, T; Tondelier, Denis; Bonnassieux, Yvan; Forget, Sebastien; Chenais, Sebastien; Ishow, Elena

    2014-01-01T23:59:59.000Z

    We described an approach to achieve fine color control of fluorescent White Organic Light-Emitting Diodes (OLED), based on an Ultra-thin Premixed emitting Layer (UPL). The UPL consists of a mixture of two dyes (red-emitting 4-di(4'-tert-butylbiphenyl-4-yl)amino-4'-dicyanovinylbenzene or fvin and green-emitting 4-di(4'-tert-butylbiphenyl-4-yl)aminobenzaldehyde or fcho) premixed in a single evaporation cell: since these two molecules have comparable structures and similar melting temperatures, a blend can be evaporated, giving rise to thin films of identical and reproducible composition compared to those of the pre-mixture. The principle of fine color tuning is demonstrated by evaporating a 1-nm-thick layer of this blend within the hole-transport layer (4,4'-bis[N-(1-naphtyl)-N-phenylamino]biphenyl (\\alpha-NPB)) of a standard fluorescent OLED structure. Upon playing on the position of the UPL inside the hole-transport layer, as well as on the premix composition, two independent parameters are available to finel...

  12. Development of ZnO Based Light Emitting Diodes and Laser Diodes

    E-Print Network [OSTI]

    Kong, Jieying

    2012-01-01T23:59:59.000Z

    E. Fred Schubert, Light-Emitting Diodes, New York (2006) [8]ZnO homojunction light emitting diode 3. 1. Motivation ofAlGaAs red light-emitting diodes, in: G.B. Stringfellow, M.

  13. Supporting Information Nanofluidic Diodes based on Nanotube Heterojunctions

    E-Print Network [OSTI]

    Yang, Peidong

    Supporting Information Nanofluidic Diodes based on Nanotube Heterojunctions Ruoxue Yan, Wenjie loaded with R6G. Nanotube diode device fabrication Nanofluidic diode devices interfaced

  14. Enhanced vbasis laser diode package

    DOE Patents [OSTI]

    Deri, Robert J.; Chen, Diana; Bayramian, Andy; Freitas, Barry; Kotovsky, Jack

    2014-08-19T23:59:59.000Z

    A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.

  15. Full phosphorescent white-light organic light-emitting diodes with improved color stability and efficiency by fine tuning primary emission contributions

    SciTech Connect (OSTI)

    Hua, Wang, E-mail: wmsu2008@sinano.ac.cn, E-mail: wanghua001@tyut.edu.cn; Du, Xiaogang [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024 (China) [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024 (China); Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024 (China); Su, Wenming, E-mail: wmsu2008@sinano.ac.cn, E-mail: wanghua001@tyut.edu.cn; Zhang, Dongyu [Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, suzhou 215123 (China)] [Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, suzhou 215123 (China); Lin, Wenjing [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024 (China) [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024 (China); Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024 (China); Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, suzhou 215123 (China)

    2014-02-15T23:59:59.000Z

    In this paper, a novel type of white-light organic light emitting diode (OLED) with high color stability was reported, in which the yellow-light emission layer of (4,4{sup ?}-N,N{sup ?}-dicarbazole)biphenyl (CBP) : tris(2-phenylquinoline-C2,N{sup ?})iridium(III) (Ir(2-phq){sub 3}) was sandwiched by double blue-light emission layers of 1,1-bis-[(di-4-tolylamino)pheny1]cyclohexane (TAPC) : bis[4,6-(di-fluorophenyl)-pyridinato-N,C2{sup ?}]picolinate (FIrpic) and tris[3-(3-pyridyl)mesityl]borane (3TPYMB):FIrpic. And, it exhibited the maximum current efficiency of 33.1 cd/A, the turn-on voltage at about 3 V and the maximum luminance in excess of 20000 cd/m{sup 2}. More important, it realized very stable white-light emission, and its CIE(x, y) coordinates only shift from (0.34, 0.37) to (0.33, 0.37) as applied voltage increased from 5 V to 12 V. It is believed that the new scheme in emission layer of white-light OLED can fine tune the contribution of primary emission with applied voltage changed, resulting in high quality white-light OLED.

  16. Monte Carlo study of efficiency roll-off of phosphorescent organic light-emitting diodes: Evidence for dominant role of triplet-polaron quenching

    SciTech Connect (OSTI)

    Eersel, H. van, E-mail: h.v.eersel@tue.nl; Coehoorn, R. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven (Netherlands); Bobbert, P. A.; Janssen, R. A. J. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

    2014-10-06T23:59:59.000Z

    We present an advanced molecular-scale organic light-emitting diode (OLED) model, integrating both electronic and excitonic processes. Using this model, we can reproduce the measured efficiency roll-off for prototypical phosphorescent OLED stacks based on the green dye tris[2-phenylpyridine]iridium (Ir(ppy){sub 3}) and the red dye octaethylporphine platinum (PtOEP) and study the cause of the roll-off as function of the current density. Both the voltage versus current density characteristics and roll-off agree well with experimental data. Surprisingly, the results of the simulations lead us to conclude that, contrary to what is often assumed, not triplet-triplet annihilation but triplet-polaron quenching is the dominant mechanism causing the roll-off under realistic operating conditions. Simulations for devices with an optimized recombination profile, achieved by carefully tuning the dye trap depth, show that it will be possible to fabricate OLEDs with a drastically reduced roll-off. It is envisaged that J{sub 90}, the current density at which the efficiency is reduced to 90%, can be increased by almost one order of magnitude as compared to the experimental state-of-the-art.

  17. DuPont Displays Develops Low-Cost Method of Printing OLED Panels

    Broader source: Energy.gov [DOE]

    DuPont Displays Inc. (DDI) has developed a novel way of printing color-tunable OLED lighting panels that keeps manufacturing costs low. The method involves processing the organic layers from solution, with most of the process steps taking place under atmospheric conditions rather than in a high vacuum. Industry-standard slot-coating methods are used in conjunction with nozzle printing—in which the solutions of organic materials are continuously jetted through an array of nozzles moving at high speed—allowing the light-emitting materials to be spatially patterned.

  18. New OLED Lighting Systems Shine Bright, Save Energy | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the.pdfBreaking ofOilNEW HAMPSHIREof EnergyBulbs | Department ofofWins R&DCyberOLED

  19. Organic light emitting diodes with structured electrodes

    DOE Patents [OSTI]

    Mao, Samuel S.; Liu, Gao; Johnson, Stephen G.

    2012-12-04T23:59:59.000Z

    A cathode that contain nanostructures that extend into the organic layer of an OLED has been described. The cathode can have an array of nanotubes or a layer of nanoclusters extending out from its surface. In another arrangement, the cathode is patterned and etched to form protruding nanostructures using a standard lithographic process. Various methods for fabricating these structures are provided, all of which are compatible with large-scale manufacturing. OLEDs made with these novel electrodes have greatly enhanced electron injection, have good environmental stability.

  20. Nanofluidic Diodes Based on Nanotube Heterojunctions

    E-Print Network [OSTI]

    Yang, Peidong

    Nanofluidic Diodes Based on Nanotube Heterojunctions Ruoxue Yan, Wenjie Liang, Rong Fan devices has recently been implemented into the nanofluidic field for the active control of ion transport, a signature of ionic diode behavior. Such nanofluidic diodes could find applications in ion separation

  1. Method of making diode structures

    DOE Patents [OSTI]

    Compaan, Alvin D.; Gupta, Akhlesh

    2006-11-28T23:59:59.000Z

    A method of making a diode structure includes the step of depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto a substrate layer, and depositing an active semiconductor junction having an n-type layer and a p-type layer onto the transparent electrode layer under process conditions that avoid substantial degradation of the electrode layer. A back electrode coating layer is applied to form a diode structure.

  2. Fluidic, Solid-State, and Hybrid Reconfiguration Techniques in a Frequency and Polarization Reconfigurable Antenna

    E-Print Network [OSTI]

    Barrera, Joel Daniel

    2014-12-16T23:59:59.000Z

    antenna structure. The fluidic mechanisms use high strength dielectric fluids or liquid metal loaded across the gap discontinuities and the solid-state mechanisms uses readily available RF PIN and varactor diodes integrated across the gaps to enable...

  3. Fluidic, Solid-State, and Hybrid Reconfiguration Techniques in a Frequency and Polarization Reconfigurable Antenna 

    E-Print Network [OSTI]

    Barrera, Joel Daniel

    2014-12-16T23:59:59.000Z

    antenna structure. The fluidic mechanisms use high strength dielectric fluids or liquid metal loaded across the gap discontinuities and the solid-state mechanisms uses readily available RF PIN and varactor diodes integrated across the gaps to enable...

  4. Enhanced light emission from top-emitting organic light-emitting diodes by optimizing surface plasmon polariton losses

    E-Print Network [OSTI]

    Fuchs, Cornelius; Wieczorek, Martin; Gather, Malte C; Hofmann, Simone; Reineke, Sebastian; Leo, Karl; Scholz, Reinhard

    2015-01-01T23:59:59.000Z

    We demonstrate enhanced light extraction for monochrome top-emitting organic light-emitting diodes (OLEDs). The enhancement by a factor of 1.2 compared to a reference sample is caused by the use of a hole transport layer (HTL) material possessing a low refractive index (1.52). The low refractive index reduces the in-plane wave vector of the surface plasmon polariton (SPP) excited at the interface between the bottom opaque metallic electrode (anode) and the HTL. The shift of the SPP dispersion relation decreases the power dissipated into lost evanescent excitations and thus increases the outcoupling efficiency, although the SPP remains constant in intensity. The proposed method is suitable for emitter materials owning isotropic orientation of the transition dipole moments as well as anisotropic, preferentially horizontal orientation, resulting in comparable enhancement factors. Furthermore, for sufficiently low refractive indices of the HTL material, the SPP can be modeled as a propagating plane wave within ot...

  5. 23.2 / J. X. Sun 23.2: An Efficient Stacked OLED with Double-Sided Light Emission

    E-Print Network [OSTI]

    23.2 / J. X. Sun 23.2: An Efficient Stacked OLED with Double-Sided Light Emission J. X. Sun, X. L;23.2 / J. X. Sun 2. Experimental Details The SOLED were fabricated on 75nm-ITO coated glass with a sheet

  6. Observer Design for Gas Lifted Oil Wells Ole Morten Aamo, Gisle Otto Eikrem, Hardy Siahaan, and Bjarne Foss

    E-Print Network [OSTI]

    Foss, Bjarne A.

    Observer Design for Gas Lifted Oil Wells Ole Morten Aamo, Gisle Otto Eikrem, Hardy Siahaan flow systems is an area of increasing interest for the oil and gas industry. Oil wells with highly related to oil and gas wells exist, and in this study, unstable gas lifted wells will be the area

  7. 3-TFT OLED Pixel Circuit for High Stability with In-pixel Current Source Ting Liu and James C. Sturm

    E-Print Network [OSTI]

    ), a driving TFT (T2), a programming TFT (T3), a storage capacitor (Cs) and an OLED. The control signal lines], the positive threshold voltage shift ( Vth) of the driving a-Si TFT under gate bias leads to reduced drain because of the parasitic capacitance of data lines and inconvenient constant current sources that control

  8. High efficiency III-nitride light-emitting diodes

    DOE Patents [OSTI]

    Crawford, Mary; Koleske, Daniel; Cho, Jaehee; Zhu, Di; Noemaun, Ahmed; Schubert, Martin F; Schubert, E. Fred

    2013-05-28T23:59:59.000Z

    Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

  9. New red phosphor for near-ultraviolet light-emitting diodes with high color-purity

    SciTech Connect (OSTI)

    Wang, Zhengliang, E-mail: wzhl_ww@yahoo.com.cn [School of Chemistry and Biotechnology, Yunnan Nationalities University, Kunming, Yunnan 650031 (China)] [School of Chemistry and Biotechnology, Yunnan Nationalities University, Kunming, Yunnan 650031 (China); He, Pei; Wang, Rui [School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China)] [School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China); Zhao, Jishou [School of Chemistry and Biotechnology, Yunnan Nationalities University, Kunming, Yunnan 650031 (China)] [School of Chemistry and Biotechnology, Yunnan Nationalities University, Kunming, Yunnan 650031 (China); Gong, Menglian [School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China)] [School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China)

    2010-02-15T23:59:59.000Z

    New red phosphors, Na{sub 5}Eu(MoO{sub 4}){sub 4} doped with boron oxide were prepared by the solid-state reaction. Their structure and photo-luminescent properties were investigated. With the introduction of boron oxide, the red emission intensity of the phosphors under 395 nm excitation is strengthened, with high color-purity (x = 0.673, y = 0.327). The single red light-emitting diode was obtained by combining InGaN chip with the red phosphor, bright red light can be observed by naked eyes from the red light-emitting diodes under a forward bias of 20 mA.

  10. Mercury: A Diode-Pumped Solid-State Laser

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC)Integrated Codes |IsLove Your HomeOverview and History MentorStockpile Stewardship

  11. HELIUM, SOLID 1 Helium, Solid

    E-Print Network [OSTI]

    Glyde, Henry R.

    HELIUM, SOLID 1 Helium, Solid Henry R. Glyde Introduction Helium was first solidified at the famous focused on the melting curve, the specific heat, and the thermal conductivity of solid helium as a test criterion of melting does not hold in solid helium. This pioneering work up to 1957 is elegantly

  12. Megahertz organic/polymer diodes

    DOE Patents [OSTI]

    Katz, Howard Edan; Sun, Jia; Pal, Nath Bhola

    2012-12-11T23:59:59.000Z

    Featured is an organic/polymer diode having a first layer composed essentially of one of an organic semiconductor material or a polymeric semiconductor material and a second layer formed on the first layer and being electrically coupled to the first layer such that current flows through the layers in one direction when a voltage is applied in one direction. The second layer is essentially composed of a material whose characteristics and properties are such that when formed on the first layer, the diode is capable of high frequency rectifications on the order of megahertz rectifications such as for example rectifications at one of above 100KHz, 500KhZ, IMHz, or 10 MHz. In further embodiments, the layers are arranged so as to be exposed to atmosphere.

  13. 1.0. Semiconductor Diodes 1 of 27 1.2 Ideal Diode

    E-Print Network [OSTI]

    Allen, Gale

    1.0. Semiconductor Diodes 1 of 27 1.2 Ideal Diode ID VD ID Open Circuit Short Circuit VD + - #12;1.0. Semiconductor Diodes 2 of 27 1.3 Semiconductor Materials Conductor Insulator Semiconductor R = (Resistivity Resistivity of a semiconductor decreases as temperature increases. ure coefficient.Negative temperat #12

  14. Sandia National Laboratories: light-emitting diode

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    light-emitting diode Sandian Receives the Illuminating Engineering Society of North America, South Region Technical Award On December 12, 2014, in Capabilities, Energy, Energy...

  15. area diode laser: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laser Diode Operates similar to a Light Emitting DiodeOperates similar to a Light Emitting Diode Active medium is a semiconductor pActive medium is a semiconductor p--n...

  16. assisted diode laser: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laser Diode Operates similar to a Light Emitting DiodeOperates similar to a Light Emitting Diode Active medium is a semiconductor pActive medium is a semiconductor p--n...

  17. Optical Semiconductor DevicesOptical Semiconductor Devices The Foundations of the Laser Diode

    E-Print Network [OSTI]

    La Rosa, Andres H.

    Glowing DiodeThe Glowing Diode ·· ""LuminousLuminous carborundum [siliconcarborundum [silicon carbide

  18. Demonstration Assessment of Light Emitting Diode (LED) Street...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Demonstration Assessment of Light Emitting Diode (LED) Street Lighting, Final Report Demonstration Assessment of Light Emitting Diode (LED) Street Lighting, Final Report This...

  19. Demonstration Assessment of Light-Emitting Diode (LED) Freezer...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Demonstration Assessment of Light-Emitting Diode (LED) Freezer Case Lighting Demonstration Assessment of Light-Emitting Diode (LED) Freezer Case Lighting This document is a report...

  20. avalanche diode array: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Array and Graphene Hybrid Light Emitting Diodes Jung Min Lee, Jae a class of light emitting diode (LED) with interesting mechanical, optical, and electrical characteristics,...

  1. Scaling of solid state lasers for satellite power beaming applications

    SciTech Connect (OSTI)

    Friedman, H.W.; Albrecht, G.F.; Beach, R.J.

    1994-01-01T23:59:59.000Z

    The power requirements for a satellite power beaming laser system depend upon the diameter of the beam director, the performance of the adaptive optics system, and the mission requirements. For an 8 meter beam director and overall Strehl ratio of 50%, a 30 kW laser at 850 nm can deliver an equivalent solar flux to a satellite at geostationary orbit. Advances in Diode Pumped Solid State Lasers (DPSSL) have brought these small, efficient and reliable devices to high average power and they should be considered for satellite power beaming applications. Two solid state systems are described: a diode pumped Alexandrite and diode pumped Thulium doped YAG. Both can deliver high average power at 850 nm in a single aperture.

  2. Broadband light-emitting diode

    DOE Patents [OSTI]

    Fritz, Ian J. (Albuquerque, NM); Klem, John F. (Sandia Park, NM); Hafich, Michael J. (Albuquerque, NM)

    1998-01-01T23:59:59.000Z

    A broadband light-emitting diode. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3-2 .mu.m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-division-multiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft.

  3. Broadband light-emitting diode

    DOE Patents [OSTI]

    Fritz, I.J.; Klem, J.F.; Hafich, M.J.

    1998-07-14T23:59:59.000Z

    A broadband light-emitting diode is disclosed. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3--2 {micro}m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-divisionmultiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft. 10 figs.

  4. Synergies Connecting the Photovoltaics and Solid-State Lighting Industries

    SciTech Connect (OSTI)

    Kurtz, S.

    2003-05-01T23:59:59.000Z

    Recent increases in the efficiencies of phosphide, nitride, and organic light-emitting diodes (LEDs) inspire a vision of a revolution in lighting. If high efficiencies, long lifetimes, and low cost can be achieved, solid-state lighting could save our country many quads of electricity in the coming years. The solid-state lighting (SSL) and photovoltaic (PV) industries share many of the same challenges. This paper explores the similarities between the two industries and how they might benefit by sharing information.

  5. The development of a solid-state laser-based sensor for absorption detection of OH 

    E-Print Network [OSTI]

    Ray, Gustavo Jose?

    2002-01-01T23:59:59.000Z

    A solid-state laser-based sensor for the detection of the OH molecule is described and demonstrated. Novel technology is implemented to produce a compact and portable solid-state sensor for OH absorption measurement. An external cavity diode laser...

  6. Materials Research Lab -Research Internships in Science and Engineering http://www.mrl.ucsb.edu/mrl/outreach/educational/RISE/interns03.html[5/10/12 9:53:34 AM

    E-Print Network [OSTI]

    Bigelow, Stephen

    and Biochemsitry Organic light emitting diode (OLED) synthesis Information and Safety Research Facilities Education

  7. 124 Department of Chemistry Graduate Catalogue 201314

    E-Print Network [OSTI]

    Shihadeh, Alan

    -deficient materials for organic electronics and opto-electronics applications; organic light emitting diodes (OLEDs

  8. Energy-Efficient Graphical User Interface Design Keith S. Vallerio Member, IEEE,, Lin Zhong Student Member, IEEE, and Niraj K. Jha Fellow, IEEE,

    E-Print Network [OSTI]

    Zhong, Lin

    . consumption. Researchers at HP Labs have investigated how future organic light-emitting diodes (OLED) based

  9. Peripherally Inserted Central Catheter PlacementWith the Sonic Flashlight

    E-Print Network [OSTI]

    Stetten, George

    , interventional radiology; IV, intravenous; OLED, organic light-emitting diode; PICC, peripherally inserted

  10. Chemistry Department 2013 Summer Research Program

    E-Print Network [OSTI]

    (PMDs). Such devices include dye sensitized solar cells (DSSCs), organic light emitting diodes (OLEDs

  11. Chemistry Department 2012 Summer Research Program

    E-Print Network [OSTI]

    (PMDs). Such devices include dye sensitized solar cells (DSSCs), organic light emitting diodes (OLEDs

  12. On the R\\^ole of a Torsion-like Field in a Scenario for the Spin Hall Effect

    E-Print Network [OSTI]

    Godinho, C F L

    2014-01-01T23:59:59.000Z

    Starting from an action that describes a Dirac fermion, we propose and analyze a model based on a low-relativistic Pauli equation coupled to a torsion-like term to study Spin Hall Effect (SHE). We point out a very particular connection between the modified Pauli equation and the (SHE), where what we refer to torsion as field playing an important r\\^ole in the spin-orbit coupling process. In this scenario, we present a proposal of a spin-type current, considering the tiny contributions of torsion in connection with geometrical properties of the material.

  13. Stacked Switchable Element and Diode Combination

    DOE Patents [OSTI]

    Branz, H. M.; Wang, Q.

    2006-06-27T23:59:59.000Z

    A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship so that the semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a forming voltage to the switchable element (14).

  14. Bypass diode for a solar cell

    DOE Patents [OSTI]

    Rim, Seung Bum (Palo Alto, CA); Kim, Taeseok (San Jose, CA); Smith, David D. (Campbell, CA); Cousins, Peter J. (Menlo Park, CA)

    2012-03-13T23:59:59.000Z

    Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.

  15. Stacked switchable element and diode combination

    DOE Patents [OSTI]

    Branz, Howard M.; Wang, Qi

    2006-06-27T23:59:59.000Z

    A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship so that the semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a forming voltage to the switchable element (14).

  16. Transformations in Lighting: The Seventh Annual Solid-State Lighting...

    Broader source: Energy.gov (indexed) [DOE]

    on reliability and lifetime, it emphasized reliability methods and optimization, electronics reliability, and color maintenance options. Wednesday's OLED track session...

  17. Solid electrolytes

    DOE Patents [OSTI]

    Abraham, Kuzhikalail M. (Needham, MA); Alamgir, Mohamed (Dedham, MA)

    1993-06-15T23:59:59.000Z

    This invention pertains to Li ion (Li.sup.+) conductive solid polymer electrolytes composed of solvates of Li salts immobilized (encapsulated) in a solid organic polymer matrix. In particular, this invention relates to solid polymer electrolytes derived by immobilizing complexes (solvates) formed between a Li salt such as LiAsF.sub.6, LiCF.sub.3 SO.sub.3 or LiClO.sub.4 and a mixture of aprotic organic solvents having high dielectric constants such as ethylene carbonate (EC) (dielectric constant=89.6) and propylene carbonate (PC) (dielectric constant=64.4) in a polymer matrix such as polyacrylonitrile, poly(tetraethylene glycol diacrylate), or poly(vinyl pyrrolidinone).

  18. Efficiency Improvement Opportunities for Personal Computer Monitors: Implications for Market Transformation Programs

    E-Print Network [OSTI]

    Park, Won Young

    2013-01-01T23:59:59.000Z

    crystal display LED light emitting diode MEPS minimum energyOLED organic light emitting diode PC personal computer PDPdisplay (LCD) to light emitting diode (LED) backlit LCD

  19. Water Cooling of High Power Light Emitting Diode Henrik Srensen

    E-Print Network [OSTI]

    Berning, Torsten

    Water Cooling of High Power Light Emitting Diode Henrik Sørensen Department of Energy Technology and product lifetime. The high power Light Emitting Diodes (LED) belongs to the group of electronics

  20. Pure Aluminum as the Anode in Top Emission OLED Xiao-Ming Yu, Hua-Jun Peng, Xiu-Ling Zhu, Jia-Xin Sun,

    E-Print Network [OSTI]

    Pure Aluminum as the Anode in Top Emission OLED Xiao-Ming Yu, Hua-Jun Peng, Xiu-Ling Zhu, Jia (TOLED) with pure aluminum metal layer as the bottom anode has been fabricated. The brightness as high as that of the TOLED with additional high work function silver deposited on aluminum as the anode

  1. Deterministic polarization chaos from a laser diode

    E-Print Network [OSTI]

    Martin Virte; Krassimir Panajotov; Hugo Thienpont; Marc Sciamanna

    2014-07-22T23:59:59.000Z

    Fifty years after the invention of the laser diode and fourty years after the report of the butterfly effect - i.e. the unpredictability of deterministic chaos, it is said that a laser diode behaves like a damped nonlinear oscillator. Hence no chaos can be generated unless with additional forcing or parameter modulation. Here we report the first counter-example of a free-running laser diode generating chaos. The underlying physics is a nonlinear coupling between two elliptically polarized modes in a vertical-cavity surface-emitting laser. We identify chaos in experimental time-series and show theoretically the bifurcations leading to single- and double-scroll attractors with characteristics similar to Lorenz chaos. The reported polarization chaos resembles at first sight a noise-driven mode hopping but shows opposite statistical properties. Our findings open up new research areas that combine the high speed performances of microcavity lasers with controllable and integrated sources of optical chaos.

  2. Ris-R-1306(EN) A Polarisation Coupled Diode Laser

    E-Print Network [OSTI]

    Risø-R-1306(EN) A Polarisation Coupled Diode Laser System for Photodynamic Therapy Per Malm Risø and specifications of a novel diode laser system for (interstitial) photodynamic therapy. Two 635nm broad area diode lasers are coupled to external cavities created by an end mirror. Spatial filtering is introduced in each

  3. Integrated injection-locked semiconductor diode laser

    DOE Patents [OSTI]

    Hadley, G. Ronald (Albuquerque, NM); Hohimer, John P. (Albuquerque, NM); Owyoung, Adelbert (Albuquerque, NM)

    1991-01-01T23:59:59.000Z

    A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.

  4. Integrated injection-locked semiconductor diode laser

    DOE Patents [OSTI]

    Hadley, G.R.; Hohimer, J.P.; Owyoung, A.

    1991-02-19T23:59:59.000Z

    A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet. 18 figures.

  5. alternative graphical displays: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Graphical User Interfaces on OLED Displays CiteSeer Summary: Emerging organic light-emitting diode (OLED)-based displays obviate external lighting; and consume drastically...

  6. Nanoengineering for solid-state lighting.

    SciTech Connect (OSTI)

    Schubert, E. Fred (Rensselaer Polytechnic Institute,Troy, NY); Koleske, Daniel David; Wetzel, Christian (Rensselaer Polytechnic Institute,Troy, NY); Lee, Stephen Roger; Missert, Nancy A.; Lin, Shawn-Yu (Rensselaer Polytechnic Institute,Troy, NY); Crawford, Mary Hagerott; Fischer, Arthur Joseph

    2009-09-01T23:59:59.000Z

    This report summarizes results from a 3-year Laboratory Directed Research and Development project performed in collaboration with researchers at Rensselaer Polytechnic Institute. Our collaborative effort was supported by Sandia's National Institute for Nanoengineering and focused on the study and application of nanoscience and nanoengineering concepts to improve the efficiency of semiconductor light-emitting diodes for solid-state lighting applications. The project explored LED efficiency advances with two primary thrusts: (1) the study of nanoscale InGaN materials properties, particularly nanoscale crystalline defects, and their impact on internal quantum efficiency, and (2) nanoscale engineering of dielectric and metal materials and integration with LED heterostructures for enhanced light extraction efficiency.

  7. Organic light-emitting diodes using open-shell molecule as emitter: the emission from doublet

    E-Print Network [OSTI]

    Peng, Qiming; Chen, Youchun; He, Chuanyou; Obolda, Ablikim; Li, Feng

    2014-01-01T23:59:59.000Z

    We fabricate OLEDs using a stable neutral {\\pi} radical, BDPA, as the emitter. There is only one electron in the singly occupied molecular orbital (SOMO) of this open-shell molecule. This feature makes the excited state of open-shell molecules be neither singlet nor triplet, but doublet. The key issue of how to harvest the triplet energy in an OLED is thus bypassed, due to the radiative decay of doublet is totally spin allowed. In the BDPA-based OLED, the emission was confirmed to be from the electronic transition from LUMO to SOMO, via the frontier molecular orbital analysis combined with the spectroscopy measurements. The maximum luminance of the OLEDs is 4879 cd/m2 which is comparable to the first reported Fluorescence-, Phosphorecence- and TADF-based OLEDs.

  8. Uniform insulation applied-B ion diode

    DOE Patents [OSTI]

    Seidel, David B. (Albuquerque, NM); Slutz, Stephen A. (Albuquerque, NM)

    1988-01-01T23:59:59.000Z

    An applied-B field extraction ion diode has uniform insulation over an anode surface for increased efficiency. When the uniform insulation is accomplished with anode coils, and a charge-exchange foil is properly placed, the ions may be focused at a point on the z axis.

  9. Entangled Light Emission From a Diode

    SciTech Connect (OSTI)

    Stevenson, R. M.; Shields, A. J. [Toshiba Research Europe Limited, 208 Cambridge Science Park, Cambridge CB4 0GZ (United Kingdom); Salter, C. L. [Toshiba Research Europe Limited, 208 Cambridge Science Park, Cambridge CB4 0GZ (United Kingdom); Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Farrer, I.; Nicoll, C. A.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom)

    2011-12-23T23:59:59.000Z

    Electrically-driven entangled photon generation is demonstrated for the first time using a single semiconductor quantum dot embedded in a light emitting diode structure. The entanglement fidelity is shown to be of sufficient quality for applications such as quantum key distribution.

  10. First Assemblies Using Deep Trench Termination Diodes

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    First Assemblies Using Deep Trench Termination Diodes F. Baccar, L. Théolier, S. Azzopardi, F. Le Trench Termination (DT2 ), are analyzed in a reliability purpose. For the first time, assemblies are made. As a consequence, to improve the breakdown voltage, it is necessary to create an adequate edge termination

  11. The Pierce-diode approximation to the single-emitter plasma diode

    SciTech Connect (OSTI)

    Ender, A. Ya.; Kuhn, S.; Kuznetsov, V. I. [Ioffe Physico-Technical Institute, St. Petersburg 194021 (Russian Federation); Department of Theoretical Physics, University of Innsbruck, A-6020 Innsbruck (Austria); Ioffe Physico-Technical Institute, St. Petersburg 194021 (Russian Federation)

    2006-11-15T23:59:59.000Z

    The possibility of modeling fast processes in the collisionless single-emitter plasma diode (Knudsen diode with surface ionization, KDSI) by means of the Pierce-diode is studied. The KDSI is of practical importance in that it is an almost exact model of thermionic energy converters (TICs) in the collisionless regime and can also be used to model low-density Q-machines. At high temperatures, the Knudsen TIC comes close to the efficiency of the Carnot cycle and hence is the most promising converter of thermal to electric energy. TICs can be applied as component parts in high-temperature electronics. It is shown that normalizations must be chosen appropriately in order to compare the plasma characteristics of the two models: the KDSI and the Pierce-diode. A linear eigenmode theory of the KDSI is developed. For both nonlinear time-independent states and linear eigenmodes without electron reflection, excellent agreement is found between the analytical potential distributions for the Pierce-diode and the corresponding numerical ones for the KDSI. For the states with electron reflection, the agreement is satisfactory in a qualitative sense. A full classification of states of both diodes for the regimes with and without electron reflection is presented. The effect of the thermal spread in electron velocities on the potential distributions and the ({epsilon},{eta}) diagrams is analyzed. Generally speaking, the methodology developed is usefully applicable to a variety of systems in which the electrons have beam-like distributions.

  12. Photovoltaic-module bypass-diode encapsulation. Annual report

    SciTech Connect (OSTI)

    Not Available

    1983-06-20T23:59:59.000Z

    The design and processing techniques necessary to incorporate bypass diodes within the module encapsulant are presented in this annual report. A comprehensive survey of available pad-mounted PN junction and Schottky diodes led to the selection of Semicon PN junction diode cells for this application. Diode junction-to-heat spreader thermal resistance measurements, performed on a variety of mounted diode chip types and sizes, have yielded values which are consistently below 1/sup 0/C per watt, but show some instability when thermally cycled over the temperature range from -40 to 150/sup 0/C. Based on the results of a detailed thermal analysis, which covered the range of bypass currents from 2 to 20 amperes, three representative experimental modules, each incorporating integral bypass diode/heat spreader assemblies of various sizes, were designed and fabricated. Thermal testing of these modules has enabled the formation of a recommended heat spreader plate sizing relationship. The production cost of three encapsulated bypass diode/heat spreader assemblies were compared with similarly rated externally-mounted packaged diodes. An assessment of bypass diode reliability, which relies heavily on rectifying diode failure rate data, leads to the general conclusion that, when proper designed and installed, these devices will improve the overall reliability of a terrestrial array over a 20 year design lifetime.

  13. Investigation of Tunable Diode Spectroscopy for Monitoring Gases in Geothermal Plants

    SciTech Connect (OSTI)

    J. K. Partin

    2006-08-01T23:59:59.000Z

    The results of an investigation directed at the development of instrument-tation for the real-time monitoring of gases, such as hydrogen sulfide (H2S) and chloride (HCl), in geothermal process streams is described. The geothermal power industry has an interest in the development of new low maintenance techniques since improved capabilities could lead to considerable cost savings through the optimization of various gas abatement processes. Tunable diode laser spectroscopy was identified as a candidate tech-nology for this application and a commercial instrument was specified and procured for testing. The measurement principle involved the use of solid state diode lasers and frequency modulation techniques. The gallium arsenide diode lasers employed emit light in the 0.7 to 2.0 micron region of the electromagnetic spectrum. This region contains the overtone and combination absorption bands of a number of species of industrial interest, including H2S and HCl. A particular device can be tuned over a small range to match the absorption line by changing its applied temperature and current. The diode current can also be sinusoidally modulated in frequency as it is tuned across the line. This modulation allows measurements to be conducted at frequencies where the laser intensity noise is minimal; and therefore, very high signal-to-noise measurements are possible. The feasibility of using this technology in various types of geothermal process streams has been explored. The results of laboratory and field studies are presented along with new advances in laser technology that could allow more sensitive and selective measurements to be performed.

  14. Highly Efficient Silicon Light Emitting Diode

    E-Print Network [OSTI]

    Leminh Holleman Wallinga; P. Leminh; J. Holleman; H. Wallinga

    2000-01-01T23:59:59.000Z

    In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a local strain field that is formed by dislocation loop arrays. The dependence of device electroluminescent properties on the annealing conditions is carefully examined as a high temperature process has profound influence on these dislocations. Increased luminescent intensity at higher device temperature, together with pure diffusion current conduction mechanism evidently shows the influence of the dislocation loops. The electrical properties of the diode are reasonable with low leakage reverse current.

  15. Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    semipolar light-emitting diodes (LEDs) on low-defect bulk gallium nitride (GaN) substrates. Peak internal quantum efficiency (IQE) values of greater than 80% are...

  16. algan-based laser diodes: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laser Diode Operates similar to a Light Emitting DiodeOperates similar to a Light Emitting Diode Active medium is a semiconductor pActive medium is a semiconductor p--n...

  17. Stimulated emission in GaN-based laser diodes far below the threshold region

    E-Print Network [OSTI]

    2014-01-01T23:59:59.000Z

    forward current of light-emitting diodes,” J. Appl. Phys.superluminescent light-emitting diodes based on GaN,” Appl.superluminescent light emitting diode structures,” J. Appl.

  18. COMMUNIQU DE PRESSE NATIONAL I PARIS I 31 JANVIER 2014 La course la miniaturisation des diodes lectroluminescentes (DEL, en anglais : Light-

    E-Print Network [OSTI]

    Arleo, Angelo

    diodes électroluminescentes (DEL, en anglais : Light- Emitting Diode, LED) vient sans doute de franchir l

  19. High Efficiency LED Lamp for Solid-State Lighting

    SciTech Connect (OSTI)

    James Ibbetson

    2006-12-31T23:59:59.000Z

    This report contains a summary of technical achievements during a three-year project to demonstrate high efficiency, solid-state lamps based on gallium nitride/silicon carbide light-emitting diodes. Novel chip designs and fabrication processes are described for a new type of nitride light-emitting diode with the potential for very high efficiency. This work resulted in the demonstration of blue light-emitting diodes in the one watt class that achieved up to 495 mW of light output at 350 mA drive current, corresponding to quantum and wall plug efficiencies of 51% and 45%, respectively. When combined with a phosphor in Cree's 7090 XLamp package, these advanced blue-emitting devices resulted in white light-emitting diodes whose efficacy exceeded 85 lumens per watt. In addition, up to 1040 lumens at greater than 85 lumens per watt was achieved by combining multiple devices to make a compact white lamp module with high optical efficiency.

  20. Solid Waste (New Mexico)

    Broader source: Energy.gov [DOE]

    The New Mexico Environment Department's Solid Waste Bureau manages solid waste in the state. The Bureau implements and enforces the rules established by the Environmental Improvement Board.

  1. High power light emitting diode based setup for photobleaching fluorescent impurities

    E-Print Network [OSTI]

    Kaufman, Laura

    High power light emitting diode based setup for photobleaching fluorescent impurities Tobias K be photobleached before final sample preparation. The instrument consists of high power light emitting diodes

  2. Low-Cost Light-Emitting Diode Luminaire for General Illumination...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Cost Light-Emitting Diode Luminaire for General Illumination Low-Cost Light-Emitting Diode Luminaire for General Illumination Presenter: Paul Fini, CREE Santa Barbara Technology...

  3. DOE Announces Selections for Solid-State Lighting Core Technology...

    Broader source: Energy.gov (indexed) [DOE]

    OLEDs with longer lifetimes. Recipient: Sandia National Laboratories Title: Semi-polar GaN Materials Technology for High IQE Green LEDs Funding Source: American Recovery and...

  4. 2014 Solid-State Lighting Manufacturing R&D Workshop Presentations...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    for Low-Cost Manufacturing of OLED Lighting John Hamer, OLEDWorks Large-Area Integrated Substrate for OLED Lighting Cheng-Hung Hung, PPG Industries Day 2 LED Lighting Global...

  5. 22.3 / H. J. Peng 22.3: High Efficiency Electrophosphorescent Organic Light Emitting Diodes

    E-Print Network [OSTI]

    and Technology, Clear Water Bay, Hong Kong Abstract We have significantly improved the emission efficiency compared to conventional fluorescent OLEDs. Through harvesting both singlet and triplet excitons regime to the extraction cone, enhancing the coupling efficiency. Meanwhile, the spontaneous emission

  6. Bypass diode for a solar cell

    DOE Patents [OSTI]

    Rim, Seung Bum; Kim, Taeseok; Smith, David D; Cousins, Peter J

    2013-11-12T23:59:59.000Z

    Methods of fabricating bypass diodes for solar cells are described. In once embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed on the first conductive region. In another embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed within, and surrounded by, an uppermost portion of the first conductive region but is not formed in a lowermost portion of the first conductive region.

  7. TRICOLOR LIGHT EMITTING DIODE DOT MATRIX DISPLAY SYSTEM WITHAUDIO OUTPUT

    E-Print Network [OSTI]

    Pang, Grantham

    1 TRICOLOR LIGHT EMITTING DIODE DOT MATRIX DISPLAY SYSTEM WITHAUDIO OUTPUT Grantham Pang, Chi emitting diodes; tricolor display; audio communication. I. Introduction This paper relates to a tricolor broadcasting through the visible light rays transmitted by the display panel or assembly. Keywords: light

  8. Thermal Reliability Study of Bypass Diodes in Photovoltaic Modules (Poster)

    SciTech Connect (OSTI)

    Zhang, Z.; Wohlgemuth, J.; Kurtz, S.

    2013-05-01T23:59:59.000Z

    This paper presents the result of high-temperature durability and thermal cycling testing and analysis for the selected diodes to study the detail of the thermal design and relative long-term reliability of the bypass diodes used to limit the detrimental effects of module hot-spot susceptibility.

  9. SURFACE MOUNT FAST SWITCHING DIODE Fast Switching Speed

    E-Print Network [OSTI]

    Berns, Hans-Gerd

    ://www.diodes.com/datasheets/ap02001.pdf. 3. Short duration pulse test used to minimize self-heating effect. 4. Diodes Inc.'s "Green) RJA 833 °C/W Operating and Storage Temperature Range TJ , TSTG -65 to +150 °C Electrical

  10. Experimental and theoretical insights into the sequential oxidations of 3-2spiro molecules derived from oligophenylenes

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    been the design of efficient and stable blue light emitters for organic light-emitting diodes (OLED in organic light emitting diode (OLED) leading to violet to blue light emitting devices. [31

  11. A new solid state tritium surface monitor

    SciTech Connect (OSTI)

    Willms, R. S. (Richard Scott); Dogruel, D. (David); Myers, R. (Richard); Farrell, R. (Richard)

    2004-01-01T23:59:59.000Z

    Traditionally the amount of tritium on a surface is determined by swiping the surface with a material such as filter paper and counting the removed tritium by scintillation. While effective, this method can be time consuming, can alter the surface and only measures removable tritium. For a given application each of these considerations may or may not be a disadvantage. A solid state monitor, on the other hand, has the potential to provide rapid analysis, not alter the surface and measure all tritium on a surface. This allure has promoted open wall ion chamber and PIN diode-based tritium surface monitor development, and these techniques have enjoyed certain success. Recently the first tests were performed with an avalanche photodiode (APD) for surface tritium measurement. The tritium surface concentration is determined by placing the APD within a few millimeters of the surface of interest. Beta decay from the surface tritium impacts the APD resulting in amplified current through the diode. Analysis of this signal with a multi-channel analyzer enables counting of beta decay events and determination of the beta energy spectrum. While quite similar in concept to PIN diode based measurements, side-by-side testing showed that the APD provided substantially better counting efficiency. Considerations included count rate, background, sensitivity, stability and effect of ambient light. An important factor in the U.S. for a tritium surface monitor is the ability to measure concentrations down to the 'free release' limit, i.e., the concentration below which items can be removed from radiological control areas. The two limits being used are 10,000 disintegrations per min (dpm)/100 cm{sup 2} and 1,000 dpm/100 cm{sup 2}. Present tests show that the APD is capable of measuring down to 1,000 dpm/100 cm{sup 2} in reasonable count times. Data from this promising technique will be presented in this paper.

  12. Solids fluidizer-injector

    DOE Patents [OSTI]

    Bulicz, Tytus R. (Hickory Hills, IL)

    1990-01-01T23:59:59.000Z

    An apparatus and process for fluidizing solid particles by causing rotary motion of the solid particles in a fluidizing chamber by a plurality of rotating projections extending from a rotatable cylinder end wall interacting with a plurality of fixed projections extending from an opposite fixed end wall and passing the solid particles through a radial feed orifice open to the solids fluidizing chamber on one side and a solid particle utilization device on the other side. The apparatus and process are particularly suited for obtaining intermittent feeding with continual solids supply to the fluidizing chamber. The apparatus and process are suitable for injecting solid particles, such as coal, to an internal combustion engine.

  13. SOLUTION-PROCESSED INORGANIC ELECTRONICS

    E-Print Network [OSTI]

    Bakhishev, Teymur

    2011-01-01T23:59:59.000Z

    Electrodes for Dye-Sensitized Solar Cells,” Nano Letters,diodes (OLEDs), dye- sensitized solar cells, as well as

  14. REFINING THE SONIC FLASHLIGHT FOR INTERVENTIONAL PROCEDURES

    E-Print Network [OSTI]

    Stetten, George

    /or color display. For the latest handheld SF, a 54.8mm (diagonal) organic light emitting diode (OLED

  15. Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches

    SciTech Connect (OSTI)

    Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li [Key Laboratory of Pulsed Power, Institute of Fluid Physics, CAEP, P.O. Box 919-108, Mianyang 621900 (China)

    2014-09-15T23:59:59.000Z

    A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ?40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

  16. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09T23:59:59.000Z

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  17. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect (OSTI)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18T23:59:59.000Z

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  18. Diode laser welding of aluminum to steel

    SciTech Connect (OSTI)

    Santo, Loredana; Quadrini, Fabrizio; Trovalusci, Federica [University of Rome Tor Vergata, Department of Mechanical Engineering, Via del Politecnico 1, 00133 Rome (Italy)

    2011-05-04T23:59:59.000Z

    Laser welding of dissimilar materials was carried out by using a high power diode laser to join aluminum to steel in a butt-joint configuration. During testing, the laser scan rate was changed as well as the laser power: at low values of fluence (i.e. the ratio between laser power and scan rate), poor joining was observed; instead at high values of fluence, an excess in the material melting affected the joint integrity. Between these limiting values, a good aesthetics was obtained; further investigations were carried out by means of tensile tests and SEM analyses. Unfortunately, a brittle behavior was observed for all the joints and a maximum rupture stress about 40 MPa was measured. Apart from the formation of intermeltallic phases, poor mechanical performances also depended on the chosen joining configuration, particularly because of the thickness reduction of the seam in comparison with the base material.

  19. Low-cost laser diode array

    DOE Patents [OSTI]

    Freitas, B.L.; Skidmore, J.A.

    1999-06-01T23:59:59.000Z

    A substrate is used to fabricate a low-cost laser diode array. A substrate is machined from an electrically insulative material that is thermally conductive, or two substrates can be bonded together in which the top substrate is electrically as well as thermally conductive. The substrate thickness is slightly longer than the cavity length, and the width of the groove is wide enough to contain a bar and spring (which secures the laser bar firmly along one face of the groove). The spring also provides electrical continuity from the backside of the bar to the adjacent metalization layer on the laser bar substrate. Arrays containing one or more bars can be formed by creating many grooves at various spacings. Along the groove, many bars can be adjoined at the edges to provide parallel electrical conduction. This architecture allows precise and predictable registration of an array of laser bars to a self-aligned microlens array at low cost. 19 figs.

  20. Low-cost laser diode array

    DOE Patents [OSTI]

    Freitas, Barry L. (Livermore, CA); Skidmore, Jay A. (Livermore, CA)

    1999-01-01T23:59:59.000Z

    A substrate is used to fabricate a low-cost laser diode array. A substrate is machined from an electrically insulative material that is thermally conductive, or two substrates can be bonded together in which the top substrate is electrically as well as thermally conductive. The substrate thickness is slightly longer than the cavity length, and the width of the groove is wide enough to contain a bar and spring (which secures the laser bar firmly along one face of the groove). The spring also provides electrical continuity from the backside of the bar to the adjacent metalization layer on the laser bar substrate. Arrays containing one or more bars can be formed by creating many grooves at various spacings. Along the groove, many bars can be adjoined at the edges to provide parallel electrical conduction. This architecture allows precise and predictable registration of an array of laser bars to a self-aligned microlens array at low cost.

  1. The effects of laser energy on modelling the characteristics of p-n diodes

    E-Print Network [OSTI]

    Severin, William Alfred

    1984-01-01T23:59:59.000Z

    & N University Chairman of Advisory Committee: Dr. Phil Allen The effects of scanning with a NdtYAG laser on thermally diffused p~ junction silicon diodes were investigated. The objective was to establish the influence of laser irradiation... on diodes fabricated in nondefective silicon materials A comparison of the diode leakage current and breakdown voltages was made between laser scanned and unscanned diodes. Changes in diode leakage current and breakdown voltages were observed, which...

  2. A study of temperature compensating circuits for voltage references which use negative temperature coefficient zener diodes

    E-Print Network [OSTI]

    Coleman, Spencer Delano

    1961-01-01T23:59:59.000Z

    Character- istics in Breakdown Region . 13 3f. 1N 751 Zener Diode Voltage vs Current Character- istics in Breakdown Region . 14 3g, lN752 Zener Diode Voltage vs Current Character- istics in Breakdown Region 15 4a. 1N746 Zener Diode Ambient Temperature... vs Voltage Characteristics in Breakdown Region. . . . . . . . . . 16 4b. IN747 Zener Diode Ambient Temperature vs Voltage Characteristics in Breakdown Region. . . . . . . . . . 17 4c. 1N748 Zener Diode Ambient Temperature vs Voltage...

  3. The Tenth Annual Solid-State Lighting R&D Workshop

    Broader source: Energy.gov [DOE]

    Nearly 250 researchers, manufacturers, and other industry insiders and observers gathered in Long Beach, CA, January 29–31, 2013, to participate in DOE's tenth annual Solid-State Lighting (SSL) R&D Workshop. DOE SSL Program Manager James Brodrick kicked off Day 1 by noting how far SSL has come in the past 10 years. Whereas in 2003 LEDs were just starting to gain a foothold in traffic signals and exit signs, today they're used for nearly every lighting application, and OLED niche products are gaining traction. Brodrick noted that despite the progress, there's still significant headroom, and urged attendees to explore ways to maximize efficacy, "not compared to what was, but compared to what is and what can be." He emphasized the present opportunity to push the boundaries with new approaches, product designs, form factors, and value-added features.

  4. Laser cooling of solids

    SciTech Connect (OSTI)

    Epstein, Richard I [Los Alamos National Laboratory; Sheik-bahae, Mansoor [UNM

    2008-01-01T23:59:59.000Z

    We present an overview of solid-state optical refrigeration also known as laser cooling in solids by fluorescence upconversion. The idea of cooling a solid-state optical material by simply shining a laser beam onto it may sound counter intuitive but is rapidly becoming a promising technology for future cryocooler. We chart the evolution of this science in rare-earth doped solids and semiconductors.

  5. Thermo-electrically pumped semiconductor light emitting diodes

    E-Print Network [OSTI]

    Santhanam, Parthiban

    2014-01-01T23:59:59.000Z

    Thermo-electric heat exchange in semiconductor light emitting diodes (LEDs) allows these devices to emit optical power in excess of the electrical power used to drive them, with the remaining power drawn from ambient heat. ...

  6. White light emitting diode as liquid crystal display backlight

    E-Print Network [OSTI]

    Soon, Chian Myau

    2007-01-01T23:59:59.000Z

    The discovery of high brightness (white) light emitting diode (LED) is considered as a real threat to the current lighting industry in various applications. One of the most promising sectors would be using white LED to ...

  7. Electro-luminescent cooling: light emitting diodes above unity efficiency

    E-Print Network [OSTI]

    Santhanam, Parthiban

    Experimental demonstration of net electro-luminescent cooling in a diode, or equivalently electroluminescence with wall-plug efficiency greater than unity, had eluded direct observation for more than five decades. We review ...

  8. Analysis and Optimization of "Full-Length" Diodes

    SciTech Connect (OSTI)

    Schock, Alfred

    2012-01-19T23:59:59.000Z

    A method of analyzing the axial variation of the heat generation rate, temperature, voltage, current density and emitter heat flux in a thermionic converter is described. The method is particularly useful for the case of "long" diodes, each extending over the full length of the reactor core. For a given diode geometry and fuel distribution, the analysis combines a nuclear solution of the axial fission density profile with the iterative solution of four differential equations representing the thermal, electrical, and thermionic interactions within the diode. The digital computer program developed to solve these equations can also perform a design optimization with respect to lead resistance, load voltage, and emitter thickness, for a specified maximum emitter temperature. Typical results are presented, and the use of this analysis for predicting the diode operating characteristics is illustrated.

  9. Tetraphenylborate Solids Stability Tests

    SciTech Connect (OSTI)

    Walker, D.D. [Westinghouse Savannah River Company, AIKEN, SC (United States); Edwards, T.B.

    1997-12-19T23:59:59.000Z

    Tetraphenylborate solids provide a potentially large source of benzene in the slurries produced in the In-Tank Precipitation process. The stability of the solids is an important consideration in the safety analysis of the process and we desire an understanding of the factors that influence the rate of conversion of the solids to benzene.

  10. Solid State Division

    SciTech Connect (OSTI)

    Green, P.H.; Watson, D.M. (eds.)

    1989-08-01T23:59:59.000Z

    This report contains brief discussions on work done in the Solid State Division of Oak Ridge National Laboratory. The topics covered are: Theoretical Solid State Physics; Neutron scattering; Physical properties of materials; The synthesis and characterization of materials; Ion beam and laser processing; and Structure of solids and surfaces. (LSP)

  11. Theoretical analysis and experiments on antireflection coatings for laser diodes

    E-Print Network [OSTI]

    Chin, Kai Jian

    1987-01-01T23:59:59.000Z

    TEIEORETICAL 'NAI. YSIS AND EXPERIMENTS ON ANTIBEFLECTION COATINGS FOR LASER DIODES A Thesis by KAI 3IAN CHIN Submitted to the Graduate College of Texas AkM University in partial fulfillment of the requirement, for the degree of MASTER... OF SCIENCE December 19SI Major Subject: Electrical Engineering THEORETICAL ANALYSIS AND EXPERIMENTS ON ANTIREFLECTION COATINGS FOR. LASER DIODES A Thesis KAI JIAN CHIN Approved as to style and content by: Henry . Taylor (Chairman of Committee...

  12. Theoretical analysis and experiments on antireflection coatings for laser diodes 

    E-Print Network [OSTI]

    Chin, Kai Jian

    1987-01-01T23:59:59.000Z

    TEIEORETICAL 'NAI. YSIS AND EXPERIMENTS ON ANTIBEFLECTION COATINGS FOR LASER DIODES A Thesis by KAI 3IAN CHIN Submitted to the Graduate College of Texas AkM University in partial fulfillment of the requirement, for the degree of MASTER... OF SCIENCE December 19SI Major Subject: Electrical Engineering THEORETICAL ANALYSIS AND EXPERIMENTS ON ANTIREFLECTION COATINGS FOR. LASER DIODES A Thesis KAI JIAN CHIN Approved as to style and content by: Henry . Taylor (Chairman of Committee...

  13. Fabry-Perot fiber optic sensor using multimode laser diode

    E-Print Network [OSTI]

    Chu, Siu Yi Andrew

    1993-01-01T23:59:59.000Z

    FABRY-PEROT FIBER OPTIC SENSOR USING MULTIMODE LASER DIODE A Thesis SIU YI ANDREW CHU Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment of the requirements for the degree of MASTER OF SCIENCE August... 1993 Major Subject: Electrical Engineering FABRY-PEROT FIBER OPTIC SENSOR USING MULTIMODE LASER DIODE A Thesis SIU YI ANDREW CHU Submitted to Texas ARM University in partial fulfillment of the requirements for the degree of MASTER OF SCIENCE...

  14. Fabrication of a gated gallium arsenide heterostructure resonant tunneling diode 

    E-Print Network [OSTI]

    Kinard, William Brian

    1989-01-01T23:59:59.000Z

    ) William Brian Kinard, B. S, Texas A&M University Chair of Advisory Committee: Mark H. Weichold The objective of this research was to design and fabricate a device capable of electrically contrulhng current through a vertical resonant tunneling diode.... Addi- tionally, this modulation of current must not aB'ect the normal cperation of the resonant tunneling diode such as shifting resonant bias. Device arrays of various sizes were successfully 1'abricated for the first time utilizing unique...

  15. Ion implanted step recovery diodes - influence of material parameter variations

    E-Print Network [OSTI]

    Mosman, Thomas Michael

    1974-01-01T23:59:59.000Z

    on the successful application of ion implantation in the fabrication of an improved step recovery diode (SRD). At the same time a comprehensive account of the actual device processing will bring to light the problems and difficulties that are ordinarily...ION IMPLANTED STEP RECOVERY DIODES ? INFLUENCE OF MATERIAL PARAMETER VARIATIONS A Thesis by THOMAS MICHAEL MOSMAN Submitted to the Craduate College of Texas ARM University in partial fulfillment of the requirement for the degree of MASTER...

  16. Solid Waste Management Written Program

    E-Print Network [OSTI]

    Pawlowski, Wojtek

    Solid Waste Management Program Written Program Cornell University 8/28/2012 #12;Solid Waste.................................................................... 4 4.2.1 Compost Solid Waste Treatment Facility.................................................................... 4 4.2.2 Pathological Solid Waste Treatment Facility

  17. P-129 / J. X. Sun P-129: Highly Efficient Stacked OLED Employing New Anode-Cathode Layer

    E-Print Network [OSTI]

    in flat panel displays as well as in solid state lighting [2]. Research on how to improve the device device. Conductive material such as ITO or insulative material such as V2O5 or F4-TCNQ has been used evaporation in a four-chamber deposition system. The whole fabrication process was carried out in vacuum

  18. Solids fluidizer-injector

    DOE Patents [OSTI]

    Bulicz, T.R.

    1990-04-17T23:59:59.000Z

    An apparatus and process are described for fluidizing solid particles by causing rotary motion of the solid particles in a fluidizing chamber by a plurality of rotating projections extending from a rotatable cylinder end wall interacting with a plurality of fixed projections extending from an opposite fixed end wall and passing the solid particles through a radial feed orifice open to the solids fluidizing chamber on one side and a solid particle utilization device on the other side. The apparatus and process are particularly suited for obtaining intermittent feeding with continual solids supply to the fluidizing chamber. The apparatus and process are suitable for injecting solid particles, such as coal, to an internal combustion engine. 3 figs.

  19. Diagnostic and therapeutic applications of diode lasers and solid state lasers in medicine

    SciTech Connect (OSTI)

    Jacques, S.L. (Texas Univ., Houston, TX (United States). Cancer Center); Welch, A.J. (Texas Univ., Austin, TX (United States)); Motamedi, M. (Texas Univ., Galveston, TX (United States). Medical Branch); Rastegar, S. (Texas A and M Univ., College Station, TX (United States)); Tittel, F. (Rice Univ., Houston, TX (United States)); Esterowitz, L. (Naval Research Lab., Washington, DC (United States))

    1992-05-01T23:59:59.000Z

    The Texas Medical Center in Houston and the nearby UT Medical Branch at Galveston together constitute a major center of medical research activities. Laser applications in medicine are under development with the engineering assistance of the colloborating engineering centers at Rice University, UT-Austin, and Texas A M Univ. In addition, this collective is collaborating with the Naval Research Laboratory, where new developments in laser design are underway, in order to transfer promising new laser technology rapidly into the medical environment.

  20. Electrical Characterization of Layer-Exchange Solid-Phase Epitaxy Si Diode Junctions

    E-Print Network [OSTI]

    Technische Universiteit Delft

    . The controllability of the growth location and dimensions, practically unchanged when the downscale is reduced nitride (SiNx) spacer technology [14], mature in our research laboratory, has L 408 #12;been used: a 300

  1. Method and system for homogenizing diode laser pump arrays

    DOE Patents [OSTI]

    Bayramian, Andy J

    2013-10-01T23:59:59.000Z

    An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

  2. Mixed oxide solid solutions

    DOE Patents [OSTI]

    Magno, Scott (Dublin, CA); Wang, Ruiping (Fremont, CA); Derouane, Eric (Liverpool, GB)

    2003-01-01T23:59:59.000Z

    The present invention is a mixed oxide solid solution containing a tetravalent and a pentavalent cation that can be used as a support for a metal combustion catalyst. The invention is furthermore a combustion catalyst containing the mixed oxide solid solution and a method of making the mixed oxide solid solution. The tetravalent cation is zirconium(+4), hafnium(+4) or thorium(+4). In one embodiment, the pentavalent cation is tantalum(+5), niobium(+5) or bismuth(+5). Mixed oxide solid solutions of the present invention exhibit enhanced thermal stability, maintaining relatively high surface areas at high temperatures in the presence of water vapor.

  3. Solid Waste Management (Connecticut)

    Broader source: Energy.gov [DOE]

    Solid waste facilities operating in Connecticut must abide by these regulations, which describe requirements and procedures for issuing construction and operating permits; environmental...

  4. Solid Waste Permits (Louisiana)

    Broader source: Energy.gov [DOE]

    The Louisiana Department of Environmental Quality administers the rules and regulations governing the storage, collection, processing, recovery, and reuse of solid waste protect the air,...

  5. Solid Waste Management (Indiana)

    Broader source: Energy.gov [DOE]

    The state supports the implementation of source reduction, recycling, and other alternative solid waste management practices over incineration and land disposal. The Indiana Department of...

  6. Solid Waste Management (Michigan)

    Broader source: Energy.gov [DOE]

    This Act encourages the Department of Environmental Quality and Health Department representatives to develop and encourage methods for disposing solid waste that are environmentally sound, that...

  7. Multispectral imaging of the ocular fundus using light emitting diode illumination

    E-Print Network [OSTI]

    Claridge, Ela

    Multispectral imaging of the ocular fundus using light emitting diode illumination N. L. Everdell,1 on light emitting diode LED illumination that produces multispectral optical images of the human ocular

  8. High-Efficiency and Stable White Organic Light-Emitting Diode...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Efficiency and Stable White Organic Light-Emitting Diode Using a Single Emitter High-Efficiency and Stable White Organic Light-Emitting Diode Using a Single Emitter Presenter: Jian...

  9. Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide

    E-Print Network [OSTI]

    Baugher, Britton W. H.

    The p–n junction is the functional element of many electronic and optoelectronic devices, including diodes, bipolar transistors, photodetectors, light-emitting diodes and solar cells. In conventional p–n junctions, the ...

  10. Injection and transport processes in organic light emitting diodes based on N. Huby a,b

    E-Print Network [OSTI]

    Boyer, Edmond

    1 Injection and transport processes in organic light emitting diodes based on a silole. N. Huby a- conductors in light emitting diodes1 . The different fields of research around the organic electronic allowed

  11. Green exciplex emission from a bilayer light-emitting diode containing a rare earth ternary complex

    E-Print Network [OSTI]

    Huang, Yanyi

    Green exciplex emission from a bilayer light-emitting diode containing a rare earth ternary complex form 18 October 2001 Abstract A bilayer organic light-emitting diode using a blue-fluorescent yttrium

  12. 2.0 Diode Applications 1 of 31 2.1 Introduction

    E-Print Network [OSTI]

    Allen, Gale

    2.0 Diode Applications 1 of 31 2.1 Introduction 2.2 Load-Line Analysis #12;2.0 Diode Applications 2 of 31 Drawing the load line and finding the point of operation. Drawing the load line. 1) Redraw the circuit with the diode on the right. 2) Remove the diode and find a couple of points on the curve of VD vs

  13. Enhancement in performance of polycarbazole-graphene nanocomposite Schottky diode

    SciTech Connect (OSTI)

    Pandey, Rajiv K.; Singh, Arun Kumar; Prakash, Rajiv, E-mail: rprakash.mst@itbhu.ac.in [School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi-221005 (India)] [School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi-221005 (India)

    2013-12-15T23:59:59.000Z

    We report formation of polycarbazole (PCz)–graphene nanocomposite over indium tin oxide (ITO) coated glass substrate using electrochemical technique for fabrication of high performance Schottky diodes. The synthesized nanocomposite is characterized before fabrication of devices for confirmation of uniform distribution of graphene nanosheets in the polymer matrix. Pure PCz and PCz-graphene nanocomposites based Schottky diodes are fabricated of configuration Al/PCz/ITO and Al/PCz-graphene nanocomposite/ITO, respectively. The current density–voltage (J-V) characteristics and diode performance parameters (such as the ideality factor, barrier height, and reverse saturation current density) are compared under ambient condition. Al/PCz-graphene nanocomposite/ITO device exhibits better ideality factor in comparison to the device formed using pure PCz. It is also observed that the Al/PCz-graphene nanocomposite/ITO device shows large forward current density and low turn on voltage in comparison to Al/PCz/ITO device.

  14. High solids fermentation reactor

    DOE Patents [OSTI]

    Wyman, Charles E.; Grohmann, Karel; Himmel, Michael E.; Richard, Christopher J.

    1993-03-02T23:59:59.000Z

    A fermentation reactor and method for fermentation of materials having greater than about 10% solids. The reactor includes a rotatable shaft along the central axis, the shaft including rods extending outwardly to mix the materials. The reactor and method are useful for anaerobic digestion of municipal solid wastes to produce methane, for production of commodity chemicals from organic materials, and for microbial fermentation processes.

  15. High solids fermentation reactor

    DOE Patents [OSTI]

    Wyman, Charles E. (Lakewood, CO); Grohmann, Karel (Littleton, CO); Himmel, Michael E. (Littleton, CO); Richard, Christopher J. (Lakewood, CO)

    1993-01-01T23:59:59.000Z

    A fermentation reactor and method for fermentation of materials having greater than about 10% solids. The reactor includes a rotatable shaft along the central axis, the shaft including rods extending outwardly to mix the materials. The reactor and method are useful for anaerobic digestion of municipal solid wastes to produce methane, for production of commodity chemicals from organic materials, and for microbial fermentation processes.

  16. Solid Flame: Fundamentals and

    E-Print Network [OSTI]

    Mukasyan, Alexander

    ;Self-propagating High-temperature Synthesis (SHS) Or Combustion Synthesis TECHNOLOGY FOR MATERIAL (solid) ignition front propagation cooling The Phenomenon of Wave Localization for Solid State Self-propagating) 1.0000 Temperature (K) 2744 Gas products amount (mol) 6.00E-15 Products heat capacity (J/K) 74

  17. Space charge spectroscopy of integrated quantum well infrared photodetectorlight emitting diode

    E-Print Network [OSTI]

    Perera, A. G. Unil

    Space charge spectroscopy of integrated quantum well infrared photodetector±light emitting diode M ± light emitting diode (QWIP-LED). Quasistatic capacitance±voltage (C±V ) characteristics under reverse.V. All rights reserved. Keywords: Quantum-well infrared photodetector; Light-emitting diode; Space charge

  18. Light extraction analysis and enhancement in a quantum dot light emitting diode

    E-Print Network [OSTI]

    Wu, Shin-Tson

    Light extraction analysis and enhancement in a quantum dot light emitting diode Ruidong Zhu outcoupling and angular performance of quantum dot light emitting diode (QLED). To illustrate the design principles, we use a red QLED as an example and compare its performance with an organic light emitting diode

  19. Depth of cure and compressive strength of dental composites cured with blue light emitting diodes (LEDs)

    E-Print Network [OSTI]

    Ashworth, Stephen H.

    Depth of cure and compressive strength of dental composites cured with blue light emitting diodes with either a light emitting diode (LED) based light curing unit (LCU) or a conventional halogen LCU do reserved. Keywords: Blue light emitting diodes; Light curing unit; Composites; Irradiance; Spectrum; Depth

  20. Correlation between the Indium Tin Oxide morphology and the performances of polymer light-emitting diodes

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    : This paper reports on performance enhancement of polymer light-emitting diodes (PLEDs) based on poly(2,5-bis. Keywords : Polymer light emitting diode; Indium tin oxide; Atomic force microscopy; Rutherford backscattering spectroscopy 1. Introduction Polymer light-emitting diodes (PLEDs) have received worldwide

  1. Point defect engineered Si sub-bandgap light-emitting diode

    E-Print Network [OSTI]

    Bao, Jiming

    Point defect engineered Si sub-bandgap light-emitting diode Jiming Bao1 , Malek Tabbal1,2 , Taegon light emission in Si and demonstrate a sub-bandgap light emitting diode based on the introduction OCIS codes: (230.3670) Light-emitting diodes; (160.6000) Semiconductors; (130-0250) Optoelectronics

  2. High efficiency light emitting diode with anisotropically etched GaN-sapphire interface

    E-Print Network [OSTI]

    High efficiency light emitting diode with anisotropically etched GaN- sapphire interface M. H. Lo and optimization of a light-emitting diode projection micro-stereolithography three-dimensional manufacturingGaN micro-light emitting diodes Appl. Phys. Lett. 101, 231110 (2012) A bright cadmium-free, hybrid organic

  3. spectroscopic techniques A Multi-Source Portable Light Emitting Diode Spectrofluorometer

    E-Print Network [OSTI]

    spectroscopic techniques A Multi-Source Portable Light Emitting Diode Spectrofluorometer SAFWAN only 1.5 kg that uses multiple light emitting diodes (LEDs) as excitation sources was developed emitting diodes; LEDs; Animal forage; Excitation-emission matrices; EEM. INTRODUCTION Movement of chemical

  4. Room temperature 1.6 m electroluminescence from Ge light emitting diode on Si substrate

    E-Print Network [OSTI]

    Vuckovic, Jelena

    Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate Szu n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device.4670) Optical materials; (230.3670) Light-emitting diodes. References and links 1. L. C. Kimerling, "Silicon

  5. Vertical Pillar-Superlattice Array and Graphene Hybrid Light Emitting Diodes

    E-Print Network [OSTI]

    Rogers, John A.

    Vertical Pillar-Superlattice Array and Graphene Hybrid Light Emitting Diodes Jung Min Lee, Jae a class of light emitting diode (LED) with interesting mechanical, optical, and electrical characteristics, light-emitting diodes, 3D architectures, transparent electrodes V ertical arrays of one-dimensional (1D

  6. White emitting polyfluorene functionalized with azide hybridized on near-UV light emitting diode

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    White emitting polyfluorene functionalized with azide hybridized on near-UV light emitting diode generation using CdSe/ZnS core-shell nanocrystals hybridized with InGaN/GaN light emitting diodesGaN/conjugated polymer hybrid light-emitting diodes," Appl. Phys. Lett. 70, 2664-2666 (1997). 9. H. V. Demir, S

  7. Low-Voltage CMOS Temperature Sensor Design Using Schottky Diode-Based References

    E-Print Network [OSTI]

    Baker, R. Jacob

    have been used for many years in systems such as air conditioners, heating systems, and automotive-delta temperature sensor using Schottky diode-based current references as a replacement for the traditional PN diode as a replacement for the tradition PN junction diode in a temperature sensor. It also explores

  8. A description and evaluation of light-emitting diode displays for generation of visual stimuli*

    E-Print Network [OSTI]

    Massaro, Dominic

    A description and evaluation of light-emitting diode displays for generation of visual stimuli 53706 A description of the design and function of light-emitting diode (LED) display modules is given (Time, April 1972). Light-emitting diodes (L~Ds) are examples of these spin-offs, LED display devices

  9. Poly (p-phenyleneneacetylene) light-emitting diodes

    DOE Patents [OSTI]

    Shinar, Joseph (Ames, IA); Swanson, Leland S. (Ames, IA); Lu, Feng (Ames, IA); Ding, Yiwei (Ames, IA); Barton, Thomas J. (Ames, IA); Vardeny, Zeev V. (Salt Lake City, UT)

    1994-10-04T23:59:59.000Z

    Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes.

  10. Fabrication of poly(p-phenyleneacetylene) light-emitting diodes

    DOE Patents [OSTI]

    Shinar, Joseph (Ames, IA); Swanson, Leland S. (Ames, IA); Lu, Feng (Ames, IA); Ding, Yiwei (Ames, IA)

    1994-08-02T23:59:59.000Z

    Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as A1 or A1/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes.

  11. Composition monitoring of electron beam melting processes using diode lasers

    SciTech Connect (OSTI)

    Berzins, L.V.

    1991-11-20T23:59:59.000Z

    Electron beam melting processes are used to produce high purity alloys for a wide range of applications. Real time monitoring of the alloy constituents, however, has historically been difficult. Absorption spectroscopy using diode lasers provides a means for measuring constituent densities, and hence alloy composition, in real time. Diode lasers are suggested because they are inexpensive and require little maintenance. There is increasing interest in the composition and quality control of titanium alloys used in aircraft parts. For this reason we describe a proposed system for composition monitoring of titanium alloys. Performance and cost of the proposed system is addressed. We discuss the applicability of this approach to other alloys.

  12. Arrangement for damping the resonance in a laser diode

    SciTech Connect (OSTI)

    Katz, J.; Margalit, Sh.; Yariv, A.

    1985-04-23T23:59:59.000Z

    An arrangement for damping the resonance in a laser diode includes an additional layer which together with the conventional laser diode form a structure of a bipolar transistor. Therein, the additional layer serves as the collector, the cladding layer next to it as the base, and the active region and the other cladding layer as the emitter. A capacitor is connected across the base and the collector. It is chosen so that at any frequency above a certain selected frequency (f /SUB c/ ) which is far below the resonance frequency (f /SUB res/ ) the capacitor impedance is very low, effectively shorting the base to the collector.

  13. Poly (p-phenyleneacetylene) light-emitting diodes

    DOE Patents [OSTI]

    Shinar, J.; Swanson, L.S.; Lu, F.; Ding, Y.; Barton, T.J.; Vardeny, Z.V.

    1994-10-04T23:59:59.000Z

    Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes. 8 figs.

  14. Fabrication of poly(p-phenyleneacetylene) light-emitting diodes

    DOE Patents [OSTI]

    Shinar, J.; Swanson, L.S.; Lu, F.; Ding, Y.

    1994-08-02T23:59:59.000Z

    Acetylene-containing poly(p-phenyleneacetylene) (PPA)-based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes. 8 figs.

  15. Integrated digital metamaterials enables ultra-compact optical diodes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shen, Bing; Polson, Randy; Menon, Rajesh

    2015-01-01T23:59:59.000Z

    We applied nonlinear optimization to design integrated digital metamaterials in silicon for unidirectional energy flow. Two devices, one for each polarization state, were designed, fabricated, and characterized. Both devices offer comparable or higher transmission efficiencies and extinction ratios, are easier to fabricate, exhibit larger bandwidths and are more tolerant to fabrication errors, when compared to alternatives. Furthermore, each device footprint is only 3?m × 3?m, which is the smallest optical diode ever reported. To illustrate the versatility of digital metamaterials, we also designed a polarization-independent optical diode.

  16. Fabrication of a gated gallium arsenide heterostructure resonant tunneling diode

    E-Print Network [OSTI]

    Kinard, William Brian

    1989-01-01T23:59:59.000Z

    , . ' 'CONTACT PAD' PLANAR I ZED POLYAM I DE RECTIFYI CONTACT N DBHS Pig. 2. f'utavvay vieiv of a gated gallium arsenide heterostructure resonant tunneling diode 1018 graded from 10 18 io" 10? (lightly doped) units=cm 8 ?graded from 10 to 18...FABRICATION OF A GATED GALLIL". tl ARSEXIDE HETEROSTRL CTL RF. RESONANT TF'XXELI'XG DIODE A Thesis bt ttrILLIAAI BRIA'. s KI'iARD Subnut ted to the Office of Graduate Studies of Texas AE;M Eniverstty tn partial fulfillment of the requirements...

  17. DOE Announces Selections from Solid-State Lighting Core Technologies...

    Broader source: Energy.gov (indexed) [DOE]

    more than 10,000 hours. Recipient: Eastman Kodak Company Title: Quantum-Dot Light Emitting Diode Summary: The applicant is creating low cost inorganic light emitting diodes,...

  18. DOE Announces Selections for Solid-State Lighting Core Technology...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    large-scale manufacturing of robust P-OLED lamps. Recipient: Crystal IS, Inc. Title: GaN-ready aluminum nitride substrates for cost-effective, very low dislocation density...

  19. Management of Solid Waste (Oklahoma)

    Broader source: Energy.gov [DOE]

    The Solid Waste Management Division of the Department of Environmental Quality regulates solid waste disposal or any person who generates, collects, transports, processes, and/or disposes of solid...

  20. ZnO PN Junctions for Highly-Efficient, Low-Cost Light Emitting Diodes

    SciTech Connect (OSTI)

    David P. Norton; Stephen Pearton; Fan Ren

    2007-09-30T23:59:59.000Z

    By 2015, the US Department of Energy has set as a goal the development of advanced solid state lighting technologies that are more energy efficient, longer lasting, and more cost-effective than current technology. One approach that is most attractive is to utilize light-emitting diode technologies. Although III-V compound semiconductors have been the primary focus in pursuing this objective, ZnO-based materials present some distinct advantages that could yield success in meeting this objective. As with the nitrides, ZnO is a direct bandgap semiconductor whose gap energy (3.2 eV) can be tuned from 3.0 to 4 eV with substitution of Mg for higher bandgap, Cd for lower bandgap. ZnO has an exciton binding energy of 60 meV, which is larger than that for the nitrides, indicating that it should be a superior light emitting semiconductor. Furthermore, ZnO thin films can be deposited at temperatures on the order of 400-600 C, which is significantly lower than that for the nitrides and should lead to lower manufacturing costs. It has also been demonstrated that functional ZnO electronic devices can be fabricated on inexpensive substrates, such as glass. Therefore, for the large-area photonic application of solid state lighting, ZnO holds unique potential. A significant impediment to exploiting ZnO in light-emitting applications has been the absence of effective p-type carrier doping. However, the recent realization of acceptor-doped ZnO material overcomes this impediment, opening the door to ZnO light emitting diode development In this project, the synthesis and properties of ZnO-based pn junctions for light emitting diodes was investigated. The focus was on three issues most pertinent to realizing a ZnO-based solid state lighting technology, namely (1) achieving high p-type carrier concentrations in epitaxial and polycrystalline films, (2) realizing band edge emission from pn homojunctions, and (3) investigating pn heterojunction constructs that should yield efficient light emission. The project engaged established expertise at the University of Florida in ZnO film growth (D. Norton), device fabrication (F. Ren) and wide bandgap photonics (S. Pearton). It addressed p-type doping and junction formation in (Zn,Mg)O alloy thin films. The project employed pulsed laser deposition for film growth. The p-type dopant of interest was primarily phosphorus, given the recent results in our laboratory and elsewhere that this anions can yield p-type ZnO-based materials. The role of Zn interstitials, oxygen vacancies, and/or hydrogen complexes in forming compensating shallow donor levels imposes the need to simultaneously consider the role of in situ and post-growth processing conditions. Temperature-dependent Hall, Seebeck, C-V, and resistivity measurements was used to determine conduction mechanisms, carrier type, and doping. Temperature-dependent photoluminescence was used to determine the location of the acceptor level, injection efficiency, and optical properties of the structures. X-ray diffraction will used to characterize film crystallinity. Using these materials, the fabrication and characterization of (Zn,Mg)O pn homojunction and heterojunction devices was pursued. Electrical characterization of the junction capacitance and I-V behavior was used to extract junction profile and minority carrier lifetime. Electroluminescence from biased junctions was the primary property of interest.

  1. Solid Waste Management Act (Oklahoma)

    Broader source: Energy.gov [DOE]

    This Act establishes rules for the permitting, posting of security, construction, operation, closure, maintenance and remediation of solid waste disposal sites; disposal of solid waste in ways that...

  2. Solid Waste Rules (New Hampshire)

    Broader source: Energy.gov [DOE]

    The solid waste statute applies to construction and demolition debris, appliances, recyclables, and the facilities that collect, process, and dispose of solid waste. DES oversees the management of...

  3. Solid Waste Management (North Carolina)

    Broader source: Energy.gov [DOE]

    The Solid Waste Program regulates safe management of solid waste through guidance, technical assistance, regulations, permitting, environmental monitoring, compliance evaluation and enforcement....

  4. Tunnel junction multiple wavelength light-emitting diodes

    DOE Patents [OSTI]

    Olson, Jerry M. (Lakewood, CO); Kurtz, Sarah R. (Golden, CO)

    1992-01-01T23:59:59.000Z

    A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect.

  5. Thermoelectrically Pumped Light-Emitting Diodes Operating above Unity Efficiency

    E-Print Network [OSTI]

    Santhanam, Parthiban

    A heated semiconductor light-emitting diode at low forward bias voltage V

  6. Diode-pumped laser with improved pumping system

    DOE Patents [OSTI]

    Chang, Jim J.

    2004-03-09T23:59:59.000Z

    A laser wherein pump radiation from laser diodes is delivered to a pump chamber and into the lasing medium by quasi-three-dimensional compound parabolic concentrator light channels. The light channels have reflective side walls with a curved surface and reflective end walls with a curved surface. A flow tube between the lasing medium and the light channel has a roughened surface.

  7. Tunnel junction multiple wavelength light-emitting diodes

    DOE Patents [OSTI]

    Olson, J.M.; Kurtz, S.R.

    1992-11-24T23:59:59.000Z

    A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect. 5 figs.

  8. Coherent coupling of diode lasers by phase conjugation

    SciTech Connect (OSTI)

    Cronin-Golomb, M.; Yariv, A.; Ury, I.

    1986-05-12T23:59:59.000Z

    We report experimental demonstrations of the use of a photorefractive barium titanate ring passive phase conjugate mirror in the coherent coupling of two GaAlAs diode lasers. By cooling the crystal towards its tetragonal to orthorhombic phase transition, we were also able to achieve infrared photorefractive phase conjugation with gain.

  9. Coherent coupling of diode lasers by phase conjugation

    SciTech Connect (OSTI)

    Cronin-Golomb; Yariv; Ury

    1986-05-12T23:59:59.000Z

    Experimental demonstrations are made of the use of a photorefractive barium titanate ring passive phase conjugate mirror in the coherent coupling of two GaAlAs diode lasers. By cooling the crystal towards its tetragonal to orthorhombic phase transition, one is able to achieve infrared photorefractive phase conjugation with gain.

  10. Simulation of localized barrier defects in resonant tunneling diodes

    E-Print Network [OSTI]

    Stoneberg, Jason Neal

    1995-01-01T23:59:59.000Z

    Much research has been devoted to understanding the resonant tunneling diode in the last two decades, but some aspects of current conduction in this device are still not well understood. At Texas A&M University, Weichold, et al., have proposed...

  11. Solids Accumulation Scouting Studies

    SciTech Connect (OSTI)

    Duignan, M. R.; Steeper, T. J.; Steimke, J. L.

    2012-09-26T23:59:59.000Z

    The objective of Solids Accumulation activities was to perform scaled testing to understand the behavior of remaining solids in a Double Shell Tank (DST), specifically AW-105, at Hanford during multiple fill, mix, and transfer operations. It is important to know if fissionable materials can concentrate when waste is transferred from staging tanks prior to feeding waste treatment plants. Specifically, there is a concern that large, dense particles containing plutonium could accumulate in poorly mixed regions of a blend tank heel for tanks that employ mixing jet pumps. At the request of the DOE Hanford Tank Operations Contractor, Washington River Protection Solutions, the Engineering Development Laboratory of the Savannah River National Laboratory performed a scouting study in a 1/22-scale model of a waste staging tank to investigate this concern and to develop measurement techniques that could be applied in a more extensive study at a larger scale. Simulated waste tank solids: Gibbsite, Zirconia, Sand, and Stainless Steel, with stainless steel particles representing the heavier particles, e.g., plutonium, and supernatant were charged to the test tank and rotating liquid jets were used to mix most of the solids while the simulant was pumped out. Subsequently, the volume and shape of the mounds of residual solids and the spatial concentration profiles for the surrogate for heavier particles were measured. Several techniques were developed and equipment designed to accomplish the measurements needed and they included: 1. Magnetic particle separator to remove simulant stainless steel solids. A device was designed and built to capture these solids, which represent the heavier solids during a waste transfer from a staging tank. 2. Photographic equipment to determine the volume of the solids mounds. The mounds were photographed as they were exposed at different tank waste levels to develop a composite of topographical areas. 3. Laser rangefinders to determine the volume of the solids mounds. The mounds were scanned after tank supernatant was removed. 4. Core sampler to determine the stainless steel solids distribution within the solids mounds. This sampler was designed and built to remove small sections of the mounds to evaluate concentrations of the stainless steel solids at different special locations. 5. Computer driven positioner that placed the laser rangefinders and the core sampler in appropriate locations over solids mounds that accumulated on the bottom of a scaled staging tank where mixing is poor. These devices and techniques were effective to estimate the movement, location, and concentrations of the solids representing heavier particles and could perform well at a larger scale The experiment contained two campaigns with each comprised of ten cycles to fill and empty the scaled staging tank. The tank was filled without mixing, but emptied, while mixing, in seven batches; the first six were of equal volumes of 13.1 gallons each to represent the planned fullscale batches of 145,000 gallons, and the last, partial, batch of 6.9 gallons represented a full-scale partial batch of 76,000 gallons that will leave a 72-inch heel in the staging tank for the next cycle. The sole difference between the two campaigns was the energy to mix the scaled staging tank, i.e., the nozzle velocity and jet rotational speed of the two jet pumps. Campaign 1 used 22.9 ft/s, at 1.54 rpm based on past testing and Campaign 2 used 23.9 ft/s at 1.75 rpm, based on visual observation of minimum velocity that allowed fast settling solids, i.e., sand and stainless steel, to accumulate on the scaled tank bottom.

  12. Solid Waste Management (Kansas)

    Broader source: Energy.gov [DOE]

    This act aims to establish and maintain a cooperative state and local program of planning and technical and financial assistance for comprehensive solid waste management. No person shall construct,...

  13. Solid model design simplification

    SciTech Connect (OSTI)

    Ames, A.L.; Rivera, J.J.; Webb, A.J.; Hensinger, D.M.

    1997-12-01T23:59:59.000Z

    This paper documents an investigation of approaches to improving the quality of Pro/Engineer-created solid model data for use by downstream applications. The investigation identified a number of sources of problems caused by deficiencies in Pro/Engineer`s geometric engine, and developed prototype software capable of detecting many of these problems and guiding users towards simplified, useable models. The prototype software was tested using Sandia production solid models, and provided significant leverage in attacking the simplification problem.

  14. Solid polymer electrolytes

    DOE Patents [OSTI]

    Abraham, Kuzhikalail M. (Needham, MA); Alamgir, Mohamed (Dedham, MA); Choe, Hyoun S. (Waltham, MA)

    1995-01-01T23:59:59.000Z

    This invention relates to Li ion (Li.sup.+) conductive solid polymer electrolytes composed of poly(vinyl sulfone) and lithium salts, and their use in all-solid-state rechargeable lithium ion batteries. The lithium salts comprise low lattice energy lithium salts such as LiN(CF.sub.3 SO.sub.2).sub.2, LiAsF.sub.6, and LiClO.sub.4.

  15. Solid polymer electrolytes

    DOE Patents [OSTI]

    Abraham, K.M.; Alamgir, M.; Choe, H.S.

    1995-12-12T23:59:59.000Z

    This invention relates to Li ion (Li{sup +}) conductive solid polymer electrolytes composed of poly(vinyl sulfone) and lithium salts, and their use in all-solid-state rechargeable lithium ion batteries. The lithium salts comprise low lattice energy lithium salts such as LiN(CF{sub 3}SO{sub 2}){sub 2}, LiAsF{sub 6}, and LiClO{sub 4}. 2 figs.

  16. Solid Target Options S. Childress

    E-Print Network [OSTI]

    McDonald, Kirk

    power is higher than for existing solid target designs - but not by a large factor. · NuMI graphite beam power) · High beam power solid targets frequently use higher z materials for increased yield plusSolid Target Options NuFACT'00 S. Childress Solid Target Options · The choice of a primary beam

  17. Demonstration Assessment of Light-Emitting Diode (LED) Retrofit Lamps at the Lobby of the Bonneville Power Administration, Portland, OR

    SciTech Connect (OSTI)

    Miller, Naomi

    2011-07-01T23:59:59.000Z

    This report describes the process and results of a demonstration of solid-state lighting (SSL) technology in the lobby of the Bonneville Power Administration (BPA) headquarters building in Portland, Oregon. The project involved a simple retrofit of 32 track lights used to illuminate historical black-and-white photos and printed color posters from the 1930s and 1940s. BPA is a federal power marketing agency in the Northwestern United States, and selected this prominent location to demonstrate energy efficient light-emitting diode (LED) retrofit options that not only can reduce the electric bill for their customers but also provide attractive alternatives to conventional products, in this case accent lighting for BPA's historical artwork.

  18. P-78 / H. J. Peng 516 SID 03 DIGEST

    E-Print Network [OSTI]

    Kwok, Hoi S.

    , Clear Water Bay, Kowloon, Hong Kong Abstract An organic light emitting diode with a microcavity calculations. 1. Introduction Organic light emitting diodes (OLEDs) are challenging liquid crystal displays organic light emitting diodes (b) the normal direction electroluminescent spectra of devices

  19. International trends in solid-state lighting : analyses of the article and patent literature.

    SciTech Connect (OSTI)

    Tsao, Jeffrey Yeenien; Huey, Mark C. (Strategic Perspectives, Incorporated, McLean, VA); Boyack, Kevin W.; Miksovic, Ann E. (Strategic Perspectives, Incorporated, McLean, VA)

    2008-07-01T23:59:59.000Z

    We present an analysis of the literature of solid-state lighting, based on a comprehensive dataset of 35,851 English-language articles and 12,420 U.S. patents published or issued during the years 1977-2004 in the foundational knowledge domain of electroluminescent materials and phenomena. The dataset was created using a complex, iteratively developed search string. The records in the dataset were then partitioned according to: whether they are articles or patents, their publication or issue date, their national or continental origin, whether the active electroluminescent material was inorganic or organic, and which of a number of emergent knowledge sub-domains they aggregate into on the basis of bibliographic coupling. From these partitionings, we performed a number of analyses, including: identification of knowledge sub-domains of historical and recent importance, and trends over time of the contributions of various nations and continents to the knowledge domain and its sub-domains. Among the key results: (1) The knowledge domain as a whole has been growing quickly: the average growth rates of the inorganic and organic knowledge sub-domains have been 8%/yr and 25%/yr, respectively, compared to average growth rates less than 5%/yr for English-language articles and U.S. patents in other knowledge domains. The growth rate of the organic knowledge sub-domain is so high that its historical dominance by the inorganic knowledge sub-domain will, at current trajectories, be reversed in the coming decade. (2) Amongst nations, the U.S. is the largest contributor to the overall knowledge domain, but Japan is on a trajectory to become the largest contributor within the coming half-decade. Amongst continents, Asia became the largest contributor during the past half-decade, overwhelmingly so for the organic knowledge sub-domain. (3) The relative contributions to the article and patent datasets differ for the major continents: North America contributing relatively more patents, Europe contributing relatively more articles, and Asia contributing in a more balanced fashion. (4) For the article dataset, the nations that contribute most in quantity also contribute most in breadth, while the nations that contribute less in quantity concentrate their contributions in particular knowledge sub-domains. For the patent dataset, North America and Europe tend to contribute improvements in end-use applications (e.g., in sensing, phototherapy and communications), while Asia tends to contribute improvements at the materials and chip levels. (5) The knowledge sub-domains that emerge from aggregations based on bibliographic coupling are roughly organized, for articles, by the degree of localization of electrons and holes in the material or phenomenon of interest, and for patents, according to both their emphasis on chips, systems or applications, and their emphasis on organic or inorganic materials. (6) The six 'hottest' topics in the article dataset are: spintronics, AlGaN UV LEDs, nanowires, nanophosphors, polyfluorenes and electrophosphorescence. The nine 'hottest' topics in the patent dataset are: OLED encapsulation, active-matrix displays, multicolor OLEDs, thermal transfer for OLED fabrication, ink-jet printed OLEDs, phosphor-converted LEDs, ornamental LED packages, photocuring and phototherapy, and LED retrofitting lamps. A significant caution in interpreting these results is that they are based on English-language articles and U.S. patents, and hence will tend to over-represent the strength of English-speaking nations (particularly the U.S.), and under-represent the strength of non-English-speaking nations (particularly China).

  20. MS Exam, Fall 2012, Solid State Electronic Devices (ECE 230A-B) 1. III-V compound semiconductor GaAs has two families of cleavage planes (110) and

    E-Print Network [OSTI]

    Wang, Deli

    MS Exam, Fall 2012, Solid State Electronic Devices (ECE 230A-B) ECE230A: 1. III-V compound of GaAs crystal. 1 #12;MS Exam, Fall 2012, Solid State Electronic Devices (ECE 230A-B) ECE 230B: Assume silicon, room temperature, complete ionization. 1. For an abrupt n+-p diode in Si, the n+ doping is 1020

  1. Solid State Electronics (ECE 103) ECE MS Comp Exam, Fall 2013 (a) Draw the energy band diagram of a piece of Si at room temperature (label the diagram) and

    E-Print Network [OSTI]

    California at San Diego, University of

    Solid State Electronics (ECE 103) ­ ECE MS Comp Exam, Fall 2013 (a) Draw the energy band diagram of a piece of Si at room temperature (label the diagram) and use the band diagram to illustrate the doping (r.t.). (b) Use band diagrams to illustrate the formation of p/n junction. (c) For a p/n+ diode, p-Si

  2. Neutron irradiation effects on gallium nitride-based Schottky diodes

    SciTech Connect (OSTI)

    Lin, Chung-Han; Katz, Evan J.; Zhang, Zhichun [Department of Electrical and Computer Engineering, The Ohio State University, Columbus Ohio 43210 (United States)] [Department of Electrical and Computer Engineering, The Ohio State University, Columbus Ohio 43210 (United States); Qiu, Jie; Cao, Lei [Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)] [Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Mishra, Umesh K. [Departments of Electrical and Computer Engineering and Materials Science and Engineering, University of California, Santa Barbara, California 93106 (United States)] [Departments of Electrical and Computer Engineering and Materials Science and Engineering, University of California, Santa Barbara, California 93106 (United States); Brillson, Leonard J. [Department of Electrical and Computer Engineering, The Ohio State University, Columbus Ohio 43210 (United States) [Department of Electrical and Computer Engineering, The Ohio State University, Columbus Ohio 43210 (United States); Department of Physics and Center for Materials Research, The Ohio State University, Columbus, Ohio 43210 (United States)

    2013-10-14T23:59:59.000Z

    Depth-resolved cathodoluminescence spectroscopy (DRCLS), time-resolved surface photovoltage spectroscopy, X-ray photoemission spectroscopy (XPS), and current-voltage measurements together show that fast versus thermal neutrons differ strongly in their electronic and morphological effects on metal-GaN Schottky diodes. Fast and thermal neutrons introduce GaN displacement damage and native point defects, while thermal neutrons also drive metallurgical reactions at metal/GaN interfaces. Defect densities exhibit a threshold neutron fluence below which thermal neutrons preferentially heal versus create new native point defects. Scanning XPS and DRCLS reveal strong fluence- and metal-dependent electronic and chemical changes near the free surface and metal interfaces that impact diode properties.

  3. Flip-chip light emitting diode with resonant optical microcavity

    SciTech Connect (OSTI)

    Gee, James M.; Bogart, Katherine H.A.; Fischer, Arthur J.

    2005-11-29T23:59:59.000Z

    A flip-chip light emitting diode with enhanced efficiency. The device structure employs a microcavity structure in a flip-chip configuration. The microcavity enhances the light emission in vertical modes, which are readily extracted from the device. Most of the rest of the light is emitted into waveguided lateral modes. Flip-chip configuration is advantageous for light emitting diodes (LEDs) grown on dielectric substrates (e.g., gallium nitride LEDs grown on sapphire substrates) in general due to better thermal dissipation and lower series resistance. Flip-chip configuration is advantageous for microcavity LEDs in particular because (a) one of the reflectors is a high-reflectivity metal ohmic contact that is already part of the flip-chip configuration, and (b) current conduction is only required through a single distributed Bragg reflector. Some of the waveguided lateral modes can also be extracted with angled sidewalls used for the interdigitated contacts in the flip-chip configuration.

  4. Solid state switch

    DOE Patents [OSTI]

    Merritt, B.T.; Dreifuerst, G.R.

    1994-07-19T23:59:59.000Z

    A solid state switch, with reverse conducting thyristors, is designed to operate at 20 kV hold-off voltage, 1,500 A peak, 1.0 [mu]s pulsewidth, and 4,500 pps, to replace thyratrons. The solid state switch is more reliable, more economical, and more easily repaired. The switch includes a stack of circuit card assemblies, a magnetic assist and a trigger chassis. Each circuit card assembly contains a reverse conducting thyristor, a resistor capacitor network, and triggering circuitry. 6 figs.

  5. Electrically injected visible vertical cavity surface emitting laser diodes

    DOE Patents [OSTI]

    Schneider, R.P.; Lott, J.A.

    1994-09-27T23:59:59.000Z

    Visible laser light output from an electrically injected vertical cavity surface emitting laser (VSCEL) diode is enabled by the addition of phase-matching spacer layers on either side of the active region to form the optical cavity. The spacer layers comprise InAlP which act as charge carrier confinement means. Distributed Bragg reflector layers are formed on either side of the optical cavity to act as mirrors. 5 figs.

  6. Theory and simulation of field emission diode oscillators

    SciTech Connect (OSTI)

    Benedik, A. I.; Ryskin, N. M. [Saratov State University, Saratov 410012 (Russian Federation)] [Saratov State University, Saratov 410012 (Russian Federation); Han, S. T. [Korea Electrotechnology Research Institute, Ansan 426-170 (Korea, Republic of)] [Korea Electrotechnology Research Institute, Ansan 426-170 (Korea, Republic of)

    2013-08-15T23:59:59.000Z

    The results of a theoretical analysis of a diode oscillator with a field-emission cathode are presented. A small-signal analysis of self-excitation conditions is performed. The time-domain particle-in-cell code is developed, and the performance of an X-band oscillator is numerically demonstrated using the simulation code. The simulation shows a rather high output power and efficiency for reasonable values of cathode current density.

  7. The OCT-Penlight: In-Situ Image Display for Guiding Microsurgery Using Optical Coherence Tomography (OCT)

    E-Print Network [OSTI]

    Stetten, George

    emitting diode (OLED) display and a reflective liquid crystal display (LCD). The OLED has the advantage surgical access. The two prototypes constructed thus far have used, respectively, a miniature organic light

  8. anode-cathode microbial fuel: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    OLEDs have been fabricated using a new anode-cathode-layer (ACL) that connects light emitting diode (OLED) 1, much development has been made to improve this device for...

  9. anode catalyst layer: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    OLEDs have been fabricated using a new anode-cathode-layer (ACL) that connects light emitting diode (OLED) 1, much development has been made to improve this device for...

  10. anode buffer layer: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    OLEDs have been fabricated using a new anode-cathode-layer (ACL) that connects light emitting diode (OLED) 1, much development has been made to improve this device for...

  11. anode cathodic protection: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    OLEDs have been fabricated using a new anode-cathode-layer (ACL) that connects light emitting diode (OLED) 1, much development has been made to improve this device for...

  12. anode interfacial layer: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    OLEDs have been fabricated using a new anode-cathode-layer (ACL) that connects light emitting diode (OLED) 1, much development has been made to improve this device for...

  13. Electron transport in naphthylamine-based organic compounds S. C. Tse, K. C. Kwok, and S. K. Soa

    E-Print Network [OSTI]

    So, Shu K.

    are organic light-emitting diodes OLEDs , thin-film transistors, solar cells, and photodetectors.1­4 Among them, OLED is now a leading contender in ultrathin, flexible, flat panel display technology. A simple

  14. Tests of by-pass diodes at cryogenic temperatures for the KATRIN magnets

    SciTech Connect (OSTI)

    Gil, W. [Karlsruhe Institute of Technology, ITEP, Hermann-von-Helmholtz-Platz 1, D-76344, Eggenstein-Leopoldshafen (Germany); Bolz, H.; Jansen, A.; Müller, K.; Steidl, M. [Karlsruhe Institute of Technology, IKP, Hermann-von-Helmholtz-Platz 1, D-76344, Eggenstein-Leopoldshafen (Germany); Hagedorn, D. [CERN, TE-MPE, 1211 Geneva 23 (Switzerland)

    2014-01-27T23:59:59.000Z

    The Karlsruhe Tritium Neutrino experiment (KATRIN) requires a series of superconducting solenoid magnets for guiding beta-electrons from the source to the detector. By-pass diodes will operate at liquid helium temperatures to protect the superconducting magnets and bus bars in case of quenches. The operation conditions of the by-pass diodes depend on the different magnet systems of KATRIN. Therefore, different diode stacks are designed with adequate copper heat sinks assuming adiabatic conditions. The by-pass diode stacks have been submitted to cold tests both at liquid nitrogen and liquid helium temperatures for checking operation conditions. This report presents the test set up and first results of the diode characteristics at 300 K and 77 K, as well as of endurance tests of the diode stacks at constant current load at 77 K and 4.2 K.

  15. Electrophoretic Deposition of Highly Efficient Phosphors for White Solid State Lighting using near UV-Emitting LEDs /

    E-Print Network [OSTI]

    Choi, Jae Ik

    2014-01-01T23:59:59.000Z

    application in white light emitting diode,” J. Mater. Res. ,phosphors for white light emitting diodes (LEDs)”, 220 thconverted white light emitting diodes by electrophoretic

  16. Solid polymer electrolyte compositions

    DOE Patents [OSTI]

    Garbe, James E. (Stillwater, MN); Atanasoski, Radoslav (Edina, MN); Hamrock, Steven J. (St. Paul, MN); Le, Dinh Ba (St. Paul, MN)

    2001-01-01T23:59:59.000Z

    An electrolyte composition is featured that includes a solid, ionically conductive polymer, organically modified oxide particles that include organic groups covalently bonded to the oxide particles, and an alkali metal salt. The electrolyte composition is free of lithiated zeolite. The invention also features cells that incorporate the electrolyte composition.

  17. Wire-shaped semiconductor light-emitting diodes for general-purpose lighting

    SciTech Connect (OSTI)

    Mauk, Michael G.

    2002-10-28T23:59:59.000Z

    The object of this work is to develop and optimize a new type of light-emitting diode (LED) with a wire-shaped, cylindrical geometry.

  18. V-shaped resonators for addition of broad-area laser diode arrays

    SciTech Connect (OSTI)

    Liu, Bo; Liu, Yun; Braiman, Yehuda Y.

    2012-12-25T23:59:59.000Z

    A system and method for addition of broad-area semiconductor laser diode arrays are described. The system can include an array of laser diodes, a V-shaped external cavity, and grating systems to provide feedback for phase-locking of the laser diode array. A V-shaped mirror used to couple the laser diode emissions along two optical paths can be a V-shaped prism mirror, a V-shaped stepped mirror or include multiple V-shaped micro-mirrors. The V-shaped external cavity can be a ring cavity. The system can include an external injection laser to further improve coherence and phase-locking.

  19. Solid Waste Act (New Mexico)

    Broader source: Energy.gov [DOE]

    The main purpose of the Solid Waste Act is to authorize and direct the establishment of a comprehensive solid waste management program. The act states details about specific waste management...

  20. Solid Waste Management Program (Missouri)

    Broader source: Energy.gov [DOE]

    The Solid Waste Management Program in the Department of Natural Resources regulates the management of solid waste in the state of Missouri. A permit is required prior to the construction or...

  1. Delaware Solid Waste Authority (Delaware)

    Broader source: Energy.gov [DOE]

    The Delaware Solid Waste Authority (DSWA) runs three landfills, all of which recover methane and generate electricity with a total capacity of 24 MWs. The DSWA Solid Waste Plan includes goals,...

  2. Solid Waste Disposal Act (Texas)

    Broader source: Energy.gov [DOE]

    The Texas Commission on Environmental Quality is responsible for the regulation and management of municipal solid waste and hazardous waste. A fee is applied to all solid waste disposed in the...

  3. Effects of metallic absorption and the corrugated layer on the optical extraction efficiency of organic light-emitting diodes

    E-Print Network [OSTI]

    Lee, Baek-Woon

    2011-01-01T23:59:59.000Z

    The absorption of a metallic cathode in OLEDs is analyzed by using FDTD calculation. As the light propagates parallel to the layer, the intensity of Ez polarization decreases rapidly. The intensity at 2.0 um from the dipole is less than a quarter of that at 0.5 um. The strong absorption by a cathode can be a critical factor when considering the increase of optical extraction by means of bending the optical layers. The calculation indicates that the corrugation of layers helps the guided light escape the guiding layer, but also increases the absorption into a metallic cathode. The final optical output power of the corrugated OLED can be smaller than that of the flat OLED. On the contrary, the corrugated structure with a non-absorptive cathode increases the optical extraction by nearly two times.

  4. TRANSPORT NUMBER GRADIENTS AND SOLID ELECTROLYTE DEGRADATION

    E-Print Network [OSTI]

    De Jonghe, Lutgard C.

    2012-01-01T23:59:59.000Z

    AND SOLID ELECTROLYTE DEGRADATION Lutgard C. De Jonghe TWO-AND SOLID ELECTROLYTE DEGRADATION Lutgard C. De JongheAND SOLID ELECTROLYTE DEGRADATION Lutgard C. De Jonghe

  5. Solid state electrochemical current source

    DOE Patents [OSTI]

    Potanin, Alexander Arkadyevich (Sarov, RU); Vedeneev, Nikolai Ivanovich (Sarov, RU)

    2002-04-30T23:59:59.000Z

    A cathode and a solid state electrochemical cell comprising said cathode, a solid anode and solid fluoride ion conducting electrolyte. The cathode comprises a metal oxide and a compound fluoride containing at least two metals with different valences. Representative compound fluorides include solid solutions of bismuth fluoride and potassium fluoride; and lead fluoride and potassium fluoride. Representative metal oxides include copper oxide, lead oxide, manganese oxide, vanadium oxide and silver oxide.

  6. Heat Recovery From Solid Waste

    E-Print Network [OSTI]

    Underwood, O. W.

    1981-01-01T23:59:59.000Z

    areas of evaluation, including the cost of fuel, cost of solid waste disposal, plant energy requirements, available technology, etc....

  7. Long cycle life solid-state solid polymer electrolyte cells

    SciTech Connect (OSTI)

    Sammells, A.F.

    1988-02-02T23:59:59.000Z

    This patent describes a rechargeable solid-state lithium conducting solid polymer electrolyte electrochemical cell comprising: a lithium intercalation compound negative electrode selected from the group consisting of: MoO/sub 2/; RuO/sub 2/; WO; OsO/sub 2/; IrO/sub 2/; and Mo1/2V1/2O/sub 2/; a lithium ion conducting solid polymer electrolyte comprising a lithium ion conducting supporting electrolyte complexed with a solid polymer contacting the negative electrode on one side; and a lithium intercalation compound positive electrode contacting the opposite side of the solid polymer electrolyte.

  8. Demonstration of a semipolar (10(1)over-bar(3)over-bar) InGaN/GaN green light emitting diode

    E-Print Network [OSTI]

    2005-01-01T23:59:59.000Z

    InGaN / GaN green light emitting diode R. Sharma, a? P. M.green ??525 nm? light emitting diode ?LED?. The fabricated

  9. A blurred interface formulation of The Reference Map Technique for Fluid-Solid Interactions and Fluid-Solid-Solid Interactions

    E-Print Network [OSTI]

    Valkov, Boris Ivanov

    2014-01-01T23:59:59.000Z

    In this work we present a blurred interface method for Fluid-Solid Interactions (FSI) and multiple solids immersed in a fluid or FSSI (Fluid-Solid-Solid Interactions) based on the reference map technique as presented by ...

  10. Solid waste handling

    SciTech Connect (OSTI)

    Parazin, R.J.

    1995-05-31T23:59:59.000Z

    This study presents estimates of the solid radioactive waste quantities that will be generated in the Separations, Low-Level Waste Vitrification and High-Level Waste Vitrification facilities, collectively called the Tank Waste Remediation System Treatment Complex, over the life of these facilities. This study then considers previous estimates from other 200 Area generators and compares alternative methods of handling (segregation, packaging, assaying, shipping, etc.).

  11. Solar solids reactor

    DOE Patents [OSTI]

    Yudow, B.D.

    1986-02-24T23:59:59.000Z

    A solar powered kiln is provided, that is of relatively simple design and which efficiently uses solar energy. The kiln or solids reactor includes a stationary chamber with a rearward end which receives solid material to be reacted and a forward end through which reacted material is disposed of, and a screw conveyor extending along the bottom of the chamber for slowly advancing the material between the chamber ends. Concentrated solar energy is directed to an aperture at the forward end of the chamber to heat the solid material moving along the bottom of the chamber. The solar energy can be reflected from a mirror facing at an upward incline, through the aperture and against a heat-absorbing material near the top of the chamber, which moves towards the rear of the chamber to distribute heat throughout the chamber. Pumps at the forward and rearward ends of the chamber pump heated sweep gas through the length of the chamber, while minimizing the flow of gas through an open aperture through which concentrated sunlight is received.

  12. Solar solids reactor

    DOE Patents [OSTI]

    Yudow, Bernard D. (Chicago, IL)

    1987-01-01T23:59:59.000Z

    A solar powered kiln is provided, that is of relatively simple design and which efficiently uses solar energy. The kiln or solids reactor includes a stationary chamber with a rearward end which receives solid material to be reacted and a forward end through which reacted material is disposed of, and a screw conveyor extending along the bottom of the chamber for slowly advancing the material between the chamber ends. Concentrated solar energy is directed to an aperture at the forward end of the chamber to heat the solid material moving along the bottom of the chamber. The solar energy can be reflected from a mirror facing at an upward incline, through the aperture and against a heat-absorbing material near the top of the chamber, which moves towards the rear of the chamber to distribute heat throughout the chamber. Pumps at the forward and rearward ends of the chamber pump heated sweep gas through the length of the chamber, while minimizing the flow of gas through an open aperture through which concentrated sunlight is received.

  13. Theoretical simulations of protective thin film Fabry-Pérot filters for integrated optical elements of diode pumped alkali lasers (DPAL)

    SciTech Connect (OSTI)

    Quarrie, L., E-mail: Lindsay.Quarrie@l-3com.com, E-mail: lindsay.o.quarrie@gmail.com [New Mexico Institute of Mining and Technology, Department of Materials Engineering, 801 LeRoy Place, Socorro, NM 87801 (United States); Air Force Research Laboratory, AFRL/RDLC Laser CoE, 3550 Aberdeen Avenue SE, Kirtland AFB, NM 87117-5776 (United States)

    2014-09-15T23:59:59.000Z

    The lifetime of Diode-Pumped Alkali Lasers (DPALs) is limited by damage initiated by reaction of the glass envelope of its gain medium with rubidium vapor. Rubidium is absorbed into the glass and the rubidium cations diffuse through the glass structure, breaking bridging Si-O bonds. A damage-resistant thin film was developed enhancing high-optical transmission at natural rubidium resonance input and output laser beam wavelengths of 780 nm and 795 nm, while protecting the optical windows of the gain cell in a DPAL. The methodology developed here can be readily modified for simulation of expected transmission performance at input pump and output laser wavelengths using different combination of thin film materials in a DPAL. High coupling efficiency of the light through the gas cell was accomplished by matching the air-glass and glass-gas interfaces at the appropriate wavelengths using a dielectric stack of high and low index of refraction materials selected to work at the laser energies and protected from the alkali metal vapor in the gain cell. Thin films as oxides of aluminum, zirconium, tantalum, and silicon were selected allowing the creation of Fabry-Perot optical filters on the optical windows achieving close to 100% laser transmission in a solid optic combination of window and highly reflective mirror. This approach allows for the development of a new whole solid optic laser.

  14. Kinematics of Electrons in The Volume of a Planar Vacuum Diode in Regime of Saturation. Parameters of Hysteresis

    E-Print Network [OSTI]

    Dimitar G. Stoyanov

    2014-12-19T23:59:59.000Z

    The kinematics laws of electrons motion in the volume of a planar vacuum diode running in regime of current saturation are used. The characteristics of diode hysteresis in the conditions of S-figurative instability are got and analyzed.

  15. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, VOL. , NO. , 2012 1 Dynamic Driver Supply Voltage Scaling for Organic

    E-Print Network [OSTI]

    Pedram, Massoud

    Dynamic Driver Supply Voltage Scaling for Organic Light Emitting Diode Displays Donghwa Shin, Student, Fellow, IEEE Abstract--Organic light emitting diode (OLED) display is a self-illuminating device]. On the other hand, an organic light emitting diode (OLED) is self-illuminating using organic light emission

  16. Packaging of solid state devices

    DOE Patents [OSTI]

    Glidden, Steven C.; Sanders, Howard D.

    2006-01-03T23:59:59.000Z

    A package for one or more solid state devices in a single module that allows for operation at high voltage, high current, or both high voltage and high current. Low thermal resistance between the solid state devices and an exterior of the package and matched coefficient of thermal expansion between the solid state devices and the materials used in packaging enables high power operation. The solid state devices are soldered between two layers of ceramic with metal traces that interconnect the devices and external contacts. This approach provides a simple method for assembling and encapsulating high power solid state devices.

  17. Physical random bit generation from chaotic solitary laser diode

    E-Print Network [OSTI]

    Martin Virte; Emeric Mercier; Hugo Thienpont; Krassimir Panajotov; Marc Sciamanna

    2014-06-11T23:59:59.000Z

    We demonstrate the physical generation of random bits at high bit rates (> 100 Gb/s) using optical chaos from a solitary laser diode and therefore without the complex addition of either external optical feedback or injection. This striking result is obtained despite the low dimension and relatively small bandwidth of the laser chaos, i.e. two characteristics that have been so far considered as limiting the performances of optical chaos-based applications. We unambiguously attribute the successful randomness at high speed to the physics of the laser chaotic polarization dynamics and the resulting growth rate of the dynamical entropy.

  18. Chirped arrays of diode lasers for supermode control

    SciTech Connect (OSTI)

    Kapon, E.; Lindsey, C.; Katz, J.; Margalit, S.; Yariv, A.

    1984-08-01T23:59:59.000Z

    We propose nonuniform structures of phase-locked diode lasers, which make it possible to discriminate efficiently against all the higher order array supermodes (lateral modes). In these nonuniform arrays, the effective mode index in each channel varies across the array. Consequently, the envelopes of the various supermodes, including the highest order one, differ significantly from each other. Thus, by proper tailoring of the gain distribution across the array, one can conveniently select the fundamental supermode. Such fundamental supermode oscillation is essential in order to obtain single lobe, diffraction limited beams and minimal spectral spread from phase-locked laser arrays.

  19. Injection locking of laser diodes for microwave signal generation

    E-Print Network [OSTI]

    Yu, Ben-Mou

    1987-01-01T23:59:59.000Z

    coupler monitored by a power meter to get the highest power output. One output was plugged into the monochrometer to measure the spectrum. Finally, injection locking was obtained by adjusting the current and temperature of both lasers. The results... for the fixture of laser diode. To prevent 1), 2) and 3) the bridge resistors are chosen to be about 20K to 30K A. The bridge resistors except the thermistor are military rank resis- tors from Vishay, whose temperature coefficients are 10 ppm...

  20. Photovoltaic nanopillar radial junction diode architecture enhanced by integrating semiconductor quantum dot nanocrystals as light harvesters

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Photovoltaic nanopillar radial junction diode architecture enhanced by integrating semiconductor hybridized, radial p-n junction based, nanopillar solar cells with photovoltaic performance enhanced. By furnishing Si based nanopillar photovoltaic diodes with CdSe quantum dots, we experimentally showed up

  1. Benefits of Silicon Carbide Schottky Diodes in Boost APFC Operating in CCM

    E-Print Network [OSTI]

    Benefits of Silicon Carbide Schottky Diodes in Boost APFC Operating in CCM Sam Ben solution to Boost APFC stage operating under CCM conditions. I. Introduction Boost derived Active Power true when the APFC stage operates in the Continuous Current Mode (CCM) in which the diode current does

  2. Coupled optical and electronic simulations of electrically pumped photonic-crystal-based light-emitting diodes

    E-Print Network [OSTI]

    Dutton, Robert W.

    trade-offs in electrically pumped photonic-crystal-based light-emitting diodes. A finite- toelectronic devices, such as light-emitting diodes LEDs and lasers. It has been suggested that a thin slabCoupled optical and electronic simulations of electrically pumped photonic-crystal-based light-emitting

  3. The development and application of a diode-laser-based ultraviolet absorption sensor for nitric oxide

    E-Print Network [OSTI]

    Anderson, Thomas Nathan

    2004-09-30T23:59:59.000Z

    by the NO molecule to determine the concentration via optical absorption spectroscopy. UV radiation at 226.8 nm is generated by sum frequency mixing the outputs from a 395-nm external cavity diode laser (ECDL) and a 532-nm diode-pumped, intracavity frequency doubled...

  4. Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping

    E-Print Network [OSTI]

    Rommel, Sean

    Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping technique D. Pawlik, S. Sieg, S.K. Kurinec, S.L. Rommel, Z. Cheng, J.-S. Park, J. Hydrick and A. Lochtefeld A Ge Esaki diode is demonstrated on Si atop a coalesced epitaxial layer of Ge grown through narrow openings in SiO2

  5. Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films

    E-Print Network [OSTI]

    Tian, Weidong

    Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films Can observed in epitaxial multiferroic BiFeO3 BFO thin films. The forward direction of the rectifying current the switchable diode effect and the ferroelectric resistive switching in epitaxially BFO thin films. BFO thin

  6. Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with

    E-Print Network [OSTI]

    Gilchrist, James F.

    Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes@lehigh.edu Abstract: Improvement of light extraction efficiency of InGaN light emitting diodes (LEDs) using microstructures on the light extraction efficiency of III-Nitride LEDs was studied. Depending on the size

  7. Genetic algorithms used for the optimization of light-emitting diodes and solar thermal collectors

    E-Print Network [OSTI]

    Mayer, Alexandre

    Genetic algorithms used for the optimization of light-emitting diodes and solar thermal collectors developed for the optimization of light-emitting diodes (LED) and solar thermal collectors. The surface a light-extraction efficiency of only 3.7%). The solar thermal collector we considered consists

  8. On the Occurrence of Thermal Runaway in Diode in the J-Box

    Broader source: Energy.gov [DOE]

    This PowerPoint presentation, focused on the environmental testing of diodes, was originally presented at the International PV Module Quality Assurance Forum on Feb. 26-27, 2013 in Denver, CO. It details the thermal runaway tests of J-boxes and discusses the Tj measurement method for bypass diodes. The presentation wraps up with a discussion of the team's anticipated next steps.

  9. Harmonic Analysis of a Three-Phase Diode Bridge Rectifier based on Sampled-Data Model

    E-Print Network [OSTI]

    Lehn, Peter W.

    Harmonic Analysis of a Three-Phase Diode Bridge Rectifier based on Sampled-Data Model K. L. Lian. As demonstrated in the paper, the proposed method analytically evaluates harmonics, and obtains exact switching is to incorporate it into a harmonic power flow program to yield improved accuracy. Index Terms-- Diode Bridge

  10. GaN light-emitting diodes with Archimedean lattice photonic crystals Aurlien David,a

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    GaN light-emitting diodes with Archimedean lattice photonic crystals Aurélien David,a Tetsuo Fujii 2005; published online 16 February 2006 We study GaN-based light emitting diodes incorporating the semiconductor due to its index contrast with air.1­6 Recently, PhCs were used as out- coupling gratings in GaN

  11. Diode-pumped Nd:YAG laser emitting at 899 nm Marc Castaing

    E-Print Network [OSTI]

    Boyer, Edmond

    technologies have been developed to reach the blue range: GaN la- ser diodes, frequency-doubled laser diodes to the doping percentage, P cm-2 the absorption cross section at the pump wavelength 808 nm , A s-1 the inverse

  12. The Meyer-Neldel rule for diodes in forward bias Ralf Widenhorn,a)

    E-Print Network [OSTI]

    Bodegom, Erik

    The Meyer-Neldel rule for diodes in forward bias Ralf Widenhorn,a) Michael Fitzgibbons, and Erik. Hence, we demonstrate that a real diode follows the Meyer-Neldel rule (MNR). It is shown that the MNR the activation energy can vary from sample to sample. Meyer and Neldel found in 1937 that the activation energy

  13. Diode-pumped Q-switched Nd{sup 3+} : YAG laser operating in a wide temperature range without thermal stabilisation of pump diodes

    SciTech Connect (OSTI)

    Vainshenker, A E; Vilenskiy, A V; Kazakov, A A; Lysoy, B G; Mikhailov, L K; Pashkov, V A [Open Joint-Stock Company 'M.F. Stel'makh Polyus Research and Development Institute', Moscow (Russian Federation)

    2013-02-28T23:59:59.000Z

    A model sample of a compact low-power-consumption Nd{sup 3+} : YAG laser emitting 20-mJ pulses with a pulse repetition rate up to 20 Hz (in cyclic duty) at a wavelength of 1064 nm is developed and studied. The laser is designed for operating at external temperatures from -40 to +50 deg C. This was achieved by using quasi-end diode pumping without thermal stabilisation of pump diodes. (laser optics 2012)

  14. Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

  15. Efficiency enhancement in a light-emitting diode with a two-dimensional surface grating photonic crystal

    E-Print Network [OSTI]

    Baba, Toshihiko

    Efficiency enhancement in a light-emitting diode with a two-dimensional surface grating photonic 21 November 2003 We demonstrate a light-emitting diode exhibiting 1.7­2.7-fold enhancement in light light emitting diode LED , the ef- ficiency is limited to several percents by a low light extrac- tion

  16. Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes

    E-Print Network [OSTI]

    Gilchrist, James F.

    of light emitting diodes Ronald A. Arif, Yik-Khoon Ee, and Nelson Tansu Citation: Appl. Phys. Lett. 91 extraction in GaN-based light emitting diodes Appl. Phys. Lett. 100, 061107 (2012) Electrically driven nanopyramid green light emitting diode Appl. Phys. Lett. 100, 061106 (2012) Ultraviolet electroluminescence

  17. Journal of Light Emitting Diodes Vol 2 N0 1, April 2010 1 Abstract--Semiconductor nanocrystal quantum dots (NQD)

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Journal of Light Emitting Diodes Vol 2 N0 1, April 2010 1 Abstract-- Semiconductor nanocrystal convertors integrated on light-emitting diodes (LEDs). The use of nonradiative energy transfer, also known-LEDs for lighting applications. Index Terms-- Förster resonance energy transfer, light emitting diode, nanocrystal

  18. Direct and absolute temperature mapping and heat transfer measurements in diode-end-pumped Yb:YAG

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Direct and absolute temperature mapping and heat transfer measurements in diode-end-pumped Yb and heat sink grease respectively). The dynamics of thermal effects is also presented. PACS 42.55.Xi (Diode-pumped in a diode-end-pumped Yb:YAG crystal, using a calibrated infrared camera, with a 60-µm spatial resolution

  19. Investigations of large area electron beam diodes for excimer lasers. Final report

    SciTech Connect (OSTI)

    Not Available

    1993-12-31T23:59:59.000Z

    This report summarizes the results of a one year research program at the University of Michigan to investigate the physics and technology of microsecond electron beam diodes. These experiments were performed on the Michigan Electron Long Beam Accelerator (MELBA) at parameters: Voltage {equals} {minus}0.65 to {minus}0.9 MV, current {equals} 1 {minus}50 kA, and pulselength {equals} 0.5 {minus} 5 microseconds. Major accomplishments include: (1) the first two-wavelength (CO2 and HeNe) laser deflection measurements of diode plasma and neutrals; (2) measurements of the effects on magnetic field gradient on microsecond diode closure; (3) demonstration of good fidelity of processed x-ray signals as a diagnostic of beam voltage; (4) extended-pulselength scaling of electron beam diode arcing and diode closure; and (5) innovative Cerenkov plate diagnostics of e-beam dynamics.

  20. SU-E-T-223: Investigation of the Accuracy of Two-Dimensional Dose Distributions Measurement From High-Dose-Rate Brachytherapy Ir-192 Source Using Multiple-Diode-Array Detector (MapCheck2)

    SciTech Connect (OSTI)

    Taguenang, J; De La Fuente, T Herman; Ahmad, S; Ali, I [Oklahoma Univ. Health Science Ctr., Oklahoma City, OK (United States)

    2014-06-01T23:59:59.000Z

    Purpose: To investigate the dosimetric accuracy of multiple-diode-array detector (Mapcheck2) for high-dose-rate brachytherapy Ir-192 source. The two-dimensional (2D) dose distributions measured with MapCheck2 were validated with EBT2 Gafchromic film measurement and AAPM task-group- 43 (TG-43) modeling. Methods: 2D-dose distributions from Ir-192 source were measured with MapCheck2 and EBT2-films. MapCheck2 response was corrected for effects: directional dependence, diode and phantom heterogeneity. Optical density growth of the film was controlled by synchronized scanning of the film exposed to Ir-192 and calibration films exposed to 6 MV linac beams. Similarly, MapCheck2 response was calibrated to dose using 6 MV beams. An empirical model was developed for the dose distributions measured with Mapcheck2 that considered directional, diode and phantom heterogeneity corrections. The dose deposited in solid-state-detectors was modeled using a cavity theory model for the diode. This model was then validated with measurements using EBT2-films and calculations with TG-43. Results: The response of MapCheck2 has been corrected for different effects including: (a) directional dependence of 0–20% over angular range 0o–90o, (b) phantom heterogeneity (3%) and (c) diode heterogeneity (9%). The corrected dose distributions measured with MapCheck2 agreed well with the measured dose distributions from EBT2-film and with calculations using TG-43 within 5% over a wide range of dose levels and rates. The advantages of MapCheck2 include less noisy, linear and stable response compared with film. The response of MapCheck2 exposed to 192Ir-source showed no energy dependence similar to its response to MV energy beam. Detection spatial-resolution of individual diodes was 0.8×0.8 mm2, however, 2DMapCheck2 resolution is limited by distance between diodes (7.07 mm). Conclusion: The dose distribution measured with MapCheck2 agreed well within 5% with that measured using EBT2-films; and calculations with TG- 43. Considering correction of artifacts, MapCheck2 provides a compact, practical and accurate dosimetric tool for measurement of 2D-dose distributions for brachytherapy Ir-192.

  1. Recent advances in solid-state organic lasers

    E-Print Network [OSTI]

    Chenais, Sébastien; 10.1002/pi.3173

    2011-01-01T23:59:59.000Z

    Organic solid-state lasers are reviewed, with a special emphasis on works published during the last decade. Referring originally to dyes in solid-state polymeric matrices, organic lasers also include the rich family of organic semiconductors, paced by the rapid development of organic light emitting diodes. Organic lasers are broadly tunable coherent sources are potentially compact, convenient and manufactured at low-costs. In this review, we describe the basic photophysics of the materials used as gain media in organic lasers with a specific look at the distinctive feature of dyes and semiconductors. We also outline the laser architectures used in state-of-the-art organic lasers and the performances of these devices with regard to output power, lifetime, and beam quality. A survey of the recent trends in the field is given, highlighting the latest developments in terms of wavelength coverage, wavelength agility, efficiency and compactness, or towards integrated low-cost sources, with a special focus on the gr...

  2. HIGH-EFFICIENCY NITRIDE-BASED SOLID-STATE LIGHTING

    SciTech Connect (OSTI)

    Dr. Paul T. Fini; Prof. Shuji Nakamura

    2002-04-30T23:59:59.000Z

    In this semiannual report we summarize the progress obtained in the first six months with the support of DoE contract No.DE-FC26-01NT41203, entitled ''High-Efficiency Nitride-Based Solid-State Lighting''. The two teams, from the University of California at Santa Barbara (Principle Investigator: Dr. Shuji Nakamura) and Rensselaer Polytechnic Institute (led by Dr. N. Narendran), are pursuing the goals of this contract from thin film growth, characterization, and packaging standpoints. The UCSB team has made significant progress in the development of GaN vertical cavity surface-emitting lasers (VCSELs) as well as light-emitting diodes (LEDs) with AlGaN active regions emitting in the ultraviolet (UV). The Rensselaer team has developed target specifications for some of the key parameters for the proposed solid-state lighting system, including a luminous flux requirement matrix for various lighting applications, optimal spectral power distributions, and the performance characteristics of currently available commercial LEDs for eventual comparisons to the devices developed in the scope of this project.

  3. HIGH-EFFICIENCY NITRIDE-BASED SOLID-STATE LIGHTING

    SciTech Connect (OSTI)

    Dr. Paul T. Fini; Prof. Shuji Nakamura

    2002-09-01T23:59:59.000Z

    In this annual report we summarize the progress obtained in the first year with the support of DoE contract No.DE-FC26-01NT41203, entitled ''High-Efficiency Nitride-Based Solid-State Lighting''. The two teams, from the University of California at Santa Barbara (Principle Investigator: Dr. Shuji Nakamura) and Rensselaer Polytechnic Institute (led by Dr. N. Narendran), are pursuing the goals of this contract from thin film growth, characterization, and packaging standpoints. The UCSB team has made significant progress in the development of GaN vertical cavity surface-emitting lasers (VCSELs) as well as light-emitting diodes (LEDs) with AlGaN active regions emitting in the ultraviolet (UV). The Rensselaer team has developed target specifications for some of the key parameters for the proposed solid-state lighting system, including a luminous flux requirement matrix for various lighting applications, optimal spectral power distributions, and the performance characteristics of currently available commercial LEDs for eventual comparisons to the devices developed in the scope of this project.

  4. Tunable, diode side-pumped Er: YAG laser

    DOE Patents [OSTI]

    Hamilton, Charles E. (Bellevue, WA); Furu, Laurence H. (Modesto, CA)

    1997-01-01T23:59:59.000Z

    A discrete-element Er:YAG laser, side pumped by a 220 Watt peak-power InGaAs diode array, generates >500 mWatts at 2.94 .mu.m, and is tunable over a 6 nm range near about 2.936 .mu.m. The oscillator is a plano-concave resonator consisting of a concave high reflector, a flat output coupler, a Er:YAG crystal and a YAG intracavity etalon, which serves as the tuning element. The cavity length is variable from 3 cm to 4 cm. The oscillator uses total internal reflection in the Er:YAG crystal to allow efficient coupling of the diode emission into the resonating modes of the oscillator. With the tuning element removed, the oscillator produces up to 1.3 Watts of average power at 2.94 .mu.m. The duty factor of the laser is 6.5% and the repetition rate is variable up to 1 kHz. This laser is useful for tuning to an atmospheric transmission window at 2.935 .mu.m (air wavelength). The laser is also useful as a spectroscopic tool because it can access several infrared water vapor transitions, as well as transitions in organic compounds. Other uses include medical applications (e.g., for tissue ablation and uses with fiber optic laser scalpels) and as part of industrial effluent monitoring systems.

  5. Tunable, diode side-pumped Er:YAG laser

    DOE Patents [OSTI]

    Hamilton, C.E.; Furu, L.H.

    1997-04-22T23:59:59.000Z

    A discrete-element Er:YAG laser, side pumped by a 220 Watt peak-power InGaAs diode array, generates >500 mWatts at 2.94 {micro}m, and is tunable over a 6 nm range near about 2.936 {micro}m. The oscillator is a plano-concave resonator consisting of a concave high reflector, a flat output coupler, a Er:YAG crystal and a YAG intracavity etalon, which serves as the tuning element. The cavity length is variable from 3 cm to 4 cm. The oscillator uses total internal reflection in the Er:YAG crystal to allow efficient coupling of the diode emission into the resonating modes of the oscillator. With the tuning element removed, the oscillator produces up to 1.3 Watts of average power at 2.94 {micro}m. The duty factor of the laser is 6.5% and the repetition rate is variable up to 1 kHz. This laser is useful for tuning to an atmospheric transmission window at 2.935 {micro}m (air wavelength). The laser is also useful as a spectroscopic tool because it can access several infrared water vapor transitions, as well as transitions in organic compounds. Other uses include medical applications (e.g., for tissue ablation and uses with fiber optic laser scalpels) and as part of industrial effluent monitoring systems. 4 figs.

  6. DOE Announces Selections for SSL Core Technology (Round 6), Product...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Transparent Conductive Hole Injection Electrode for Organic Light-Emitting Diode (OLED) SSL Team Members: Plextronics Inc. Summary: This project seeks to...

  7. Four SBIR Grants Awarded for SSL Technology (FY13 Release 2 Phase...

    Broader source: Energy.gov (indexed) [DOE]

    architectural lighting fixtures that utilize the unique capabilities of organic light-emitting diode (OLED) technology to provide energy-efficient lighting for nighttime hours in...

  8. NETL F 451.1/1-1, Categorical Exclusion Designation Form

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    12-month development project that culminates in the development an Organic Light Emitting Diode (OLED) luminaire that features a base stationpanel integrated driver...

  9. adsorbed organic films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    nanoporous films H. J. Peng, Y the light extraction efficiency for organic light emitting diode OLED . Nanoporous alumina film was used by Bragg scattering. The corrugated...

  10. Solid polymer electrolyte lithium batteries

    DOE Patents [OSTI]

    Alamgir, M.; Abraham, K.M.

    1993-10-12T23:59:59.000Z

    This invention pertains to Lithium batteries using Li ion (Li[sup +]) conductive solid polymer electrolytes composed of solvates of Li salts immobilized in a solid organic polymer matrix. In particular, this invention relates to Li batteries using solid polymer electrolytes derived by immobilizing solvates formed between a Li salt and an aprotic organic solvent (or mixture of such solvents) in poly(vinyl chloride). 3 figures.

  11. Solid polymer electrolyte lithium batteries

    DOE Patents [OSTI]

    Alamgir, Mohamed (Dedham, MA); Abraham, Kuzhikalail M. (Needham, MA)

    1993-01-01T23:59:59.000Z

    This invention pertains to Lithium batteries using Li ion (Li.sup.+) conductive solid polymer electrolytes composed of solvates of Li salts immobilized in a solid organic polymer matrix. In particular, this invention relates to Li batteries using solid polymer electrolytes derived by immobilizing solvates formed between a Li salt and an aprotic organic solvent (or mixture of such solvents) in poly(vinyl chloride).

  12. Solid Waste Management (South Dakota)

    Broader source: Energy.gov [DOE]

    This statute contains provisions for solid waste management systems, groundwater monitoring, liability for pollution, permitting, inspections, and provisions for waste reduction and recycling...

  13. Solid Waste Management Act (Pennsylvania)

    Broader source: Energy.gov [DOE]

    This Act provides for the planning and regulation of solid waste storage, collection, transportation, processing, treatment, and disposal. It requires that municipalities submit plans for municipal...

  14. The feasibility study and characterization of a two-dimensional diode array in “magic phantom” for high dose rate brachytherapy quality assurance

    SciTech Connect (OSTI)

    Espinoza, A.; Beeksma, B.; Petasecca, M.; Fuduli, I.; Porumb, C.; Cutajar, D.; Lerch, M. L. F.; Rosenfeld, A. B. [Centre for Medical Radiation Physics, University of Wollongong, New South Wales 2522 (Australia)] [Centre for Medical Radiation Physics, University of Wollongong, New South Wales 2522 (Australia); Corde, S.; Jackson, M. [Department of Radiation Oncology, Prince of Wales Hospital, New South Wales 2031 (Australia)] [Department of Radiation Oncology, Prince of Wales Hospital, New South Wales 2031 (Australia)

    2013-11-15T23:59:59.000Z

    Purpose: High dose rate (HDR) brachytherapy is a radiation treatment technique capable of delivering large dose rates to the tumor. Radiation is delivered using remote afterloaders to drive highly active sources (commonly {sup 192}Ir with an air KERMA strength range between 20 000 and 40 000 U, where 1 U = 1 ?Gy m{sup 2}/h in air) through applicators directly into the patient's prescribed region of treatment. Due to the obvious ramifications of incorrect treatment while using such an active source, it is essential that there are methods for quality assurance (QA) that can directly and accurately verify the treatment plan and the functionality of the remote afterloader. This paper describes the feasibility study of a QA system for HDR brachytherapy using a phantom based two-dimensional 11 × 11 epitaxial diode array, named “magic phantom.”Methods: The HDR brachytherapy treatment plan is translated to the phantom with two rows of 10 (20 in total) HDR source flexible catheters, arranged above and below the diode array “magic plate” (MP). Four-dimensional source tracking in each catheter is based upon a developed fast iterative algorithm, utilizing the response of the diodes in close proximity to the {sup 192}Ir source, sampled at 100 ms intervals by a fast data acquisition (DAQ) system. Using a {sup 192}Ir source in a solid water phantom, the angular response of the developed epitaxial diodes utilized in the MP and also the variation of the MP response as a function of the source-to-detector distance (SDD) were investigated. These response data are then used by an iterative algorithm for source dwelling position determination. A measurement of the average transit speed between dwell positions was performed using the diodes and a fast DAQ.Results: The angular response of the epitaxial diode showed a variation of 15% within 360°, with two flat regions above and below the detector face with less than 5% variation. For SDD distances of between 5 and 30 mm the relative response of the epitaxial diodes used in the MP is in good agreement (within 8%) with radial dose function measurements found within the TG-43 protocol, with SDD of up to 70 mm showing a 40% over response. A method for four-dimensional localization of the HDR source was developed, allowing the source dwell position to be derived within 0.50 mm of the expected position. An estimation of the average transit speed for varying step sizes was determined and was found to increase from (12.8 ± 0.3) up to (38.6 ± 0.4) cm/s for a step size of 2.5 and 50 mm, respectively.Conclusions: Our characterization of the designed QA “magic phantom” with MP in realistic HDR photon fields demonstrates the promising performance for real-time source position tracking in four dimensions and measurements of transit times. Further development of this system will allow a full suite for QA in HDR brachytherapy and analysis, and for future in vivo tracking.

  15. Aerospace Applications for OLED Lighting

    Energy Savers [EERE]

    2015 Boeing. All rights reserved. Export Controlled ECCN: 9E991 NLR Aerospace economics drive long development cycles and even longer product lifecycles * Development of a...

  16. OLED Basics | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the.pdfBreaking ofOilNEWResponse to Time-BasedDecember 23,Misc Cases ArchiveWorker AppealSSL

  17. Closed electron drift in a self-magnetically insulated ion diode

    SciTech Connect (OSTI)

    Pushkarev, A. I.; Isakova, Y. I. [Tomsk Polytechnic University, 2a Lenin Ave., Tomsk 634050 (Russian Federation)] [Tomsk Polytechnic University, 2a Lenin Ave., Tomsk 634050 (Russian Federation)

    2013-05-15T23:59:59.000Z

    The paper investigates a spiral geometry self-magnetically insulated ion diode with an explosive-emission cathode made from graphite. The experiments have been carried out using the TEMP-4M accelerator, with the accelerator configured to operate in double-pulse mode: the first negative pulse (300–500 ns, 100–150 kV) and the second positive pulse (150 ns, 250–300 kV). The ion beam energy density was 0.4–0.8 J/cm{sup 2} and the beam was composed of carbon ions (80%–85%) and protons. In order to increase the efficiency of ion current generation, we have developed a new diode with a spiral-shaped grounded electrode. Using this geometry, it seems possible to realize closed electron drift in a diode with self-magnetic insulation. In the spiral diode, the efficiency of accelerated ions is increased from 5%–9% (conventional self-insulated diodes) up to 30%–40%. The realization of closed electron drift in the diode increases the efficiency of C{sup +} ion generation up to 40–50 times the Childe-Langmuir limit, which is more than 4 times higher than with other known constructions of self-magnetically insulated diodes.

  18. Department of Energy Office of Energy Efficiency and Renewable Energy Solid State Lighting Core Technologies

    SciTech Connect (OSTI)

    Franky So; Paul Holloway; Jiangeng Xue

    2009-08-06T23:59:59.000Z

    The project objective is to demonstrate high efficiency white emitting OLED devices with a target luminous efficiency between 100 1m/W and 150 1m/W with integrated microcavity structure and down conversion phosphors. The main focus of this work will be on three areas: (1) demonstration of a 2X reduction in OLED device operating voltage by employing the appropriate dopants in the carrier transporting layers; (2) demonstration of a 3X light out-coupling efficiency enhancement by incorporating microcavity structure in the OLED devices; and (3) demonstration of a 2X down-conversion efficiency enhancement (from blue to white) using phosphors.

  19. SOLID OXIDE PLANAR AND TUBULAR SOLID OXIDE FUEL

    E-Print Network [OSTI]

    Mease, Kenneth D.

    SOLID OXIDE PLANAR AND TUBULAR SOLID OXIDE FUEL CELLS Dynamic Simulation Approach Modular Approach: Individual simulation modules for each fuel cell type · Tubular SOFC · Planar SOFC · MCFC · PEM Reformer · Slow pressure transients #12;Fuel Cell Assumptions · H2 electrochemically oxidized only · CO consumed

  20. Solid and gaseous fuels

    SciTech Connect (OSTI)

    Schultz, H.; Wells, A.W.; Frommell, E.A.; Flenory, P.B.

    1987-06-15T23:59:59.000Z

    This review covers methods of sampling, analyzing, and testing coal, coke, and coal-derived solids covered during the period of October 1984 through Sept 30, 1986. Energy Research Abstracts and Chemical Abstracts were used as the reference sources. In most categories the volume of material available made it necessary to limit the number of publications in the review. This review also surveys publications concerned with methods for the chemical, physical, and instrumental analyses of gaseous fuels and related materials. Articles of significance appearing in foreign journals and the patent literature that were not available at the time of the last review are also included. Chemical Abstracts and Energy Research Abstracts were used extensively as reference sources. Some selectivity was necessary in order to include the most pertinent publications in preparing this review.

  1. Solid state rapid thermocycling

    DOE Patents [OSTI]

    Beer, Neil Reginald; Spadaccini, Christopher

    2014-05-13T23:59:59.000Z

    The rapid thermal cycling of a material is targeted. A solid state heat exchanger with a first well and second well is coupled to a power module. A thermoelectric element is coupled to the first well, the second well, and the power module, is configured to transfer thermal energy from the first well to the second well when current from the power module flows through the thermoelectric element in a first direction, and is configured to transfer thermal energy from the second well to the first well when current from the power module flows through the thermoelectric element in a second direction. A controller may be coupled to the thermoelectric elements, and may switch the direction of current flowing through the thermoelectric element in response to a determination by sensors coupled to the wells that the amount of thermal energy in the wells falls below or exceeds a pre-determined threshold.

  2. Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

    DOE Patents [OSTI]

    Beach, R.J.; Benett, W.J.; Mills, S.T.

    1997-04-01T23:59:59.000Z

    The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a ``rack and stack`` configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber. 3 figs.

  3. Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode

    DOE Patents [OSTI]

    Resnick, Paul J.; Langlois, Eric

    2014-08-26T23:59:59.000Z

    Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.

  4. Bandpass x-ray diode and x-ray multiplier detector

    DOE Patents [OSTI]

    Wang, C.L.

    1982-09-27T23:59:59.000Z

    An absorption-edge of an x-ray absorption filter and a quantum jump of a photocathode determine the bandpass characteristics of an x-ray diode detector. An anode, which collects the photoelectrons emitted by the photocathode, has enhanced amplification provided by photoelectron-multiplying means which include dynodes or a microchannel-plate electron-multiplier. Suppression of undesired high frequency response for a bandpass x-ray diode is provided by subtracting a signal representative of energies above the passband from a signal representative of the overall response of the bandpass diode.

  5. Broad Spectrum Photoelectrochemical Diodes for Solar Hydrogen Generation

    SciTech Connect (OSTI)

    Grimes, Craig A.

    2014-11-26T23:59:59.000Z

    Under program auspices we have investigated material chemistries suitable for the solar generation of hydrogen by water photoelectrolysis. We have built upon, and extended, our knowledge base on the synthesis and application of TiO2 nanotube arrays, a material architecture that appears ideal for water photoelectrolysis. To date we have optimized, refined, and greatly extended synthesis techniques suitable for achieving highly ordered TiO2 nanotube arrays of given length, wall thickness, pore diameter, and tube-to-tube spacing for use in water photoelectrolysis. We have built upon this knowledge based to achieve visible light responsive, photocorrosion stable n-type and p-type ternary oxide nanotube arrays for use in photoelectrochemical diodes.

  6. Luminescence and Squeezing of a Superconducting Light Emitting Diode

    E-Print Network [OSTI]

    Patrik Hlobil; Peter P. Orth

    2015-05-11T23:59:59.000Z

    We investigate a semiconductor $p$-$n$ junction in contact with superconducting leads that is operated under forward bias as a light-emitting diode. The presence of superconductivity results in a significant increase of the electroluminescence in a certain frequency window. We demonstrate that the tunneling of Cooper pairs induces an additional luminescence peak on resonance. There is a transfer of superconducting to photonic coherence which results in the emission of entangled photon pairs and squeezing of the fluctuations in the quadrature amplitudes of the emitted light. The squeezing angle can be electrically manipulated by changing the relative phase of the order parameters in the superconductors. We finally derive the conditions for lasing in the system and show that the laser threshold is reduced due to superconductivity. This shows how macroscopic coherence of a superconductor can be used to control the properties of light.

  7. Luminescence and Squeezing of a Superconducting Light Emitting Diode

    E-Print Network [OSTI]

    Hlobil, Patrik

    2015-01-01T23:59:59.000Z

    We investigate a semiconductor $p$-$n$ junction in contact with superconducting leads that is operated under forward bias as a light-emitting diode. The presence of superconductivity results in a significant increase of the electroluminescence in a certain frequency window. We demonstrate that the tunneling of Cooper pairs induces an additional luminescence peak on resonance. There is a transfer of superconducting to photonic coherence which results in the emission of entangled photon pairs and squeezing of the fluctuations in the quadrature amplitudes of the emitted light. The squeezing angle can be electrically manipulated by changing the relative phase of the order parameters in the superconductors. We finally derive the conditions for lasing in the system and show that the laser threshold is reduced due to superconductivity. This shows how macroscopic coherence of a superconductor can be used to control the properties of light.

  8. Luminescence and Squeezing of a Superconducting Light Emitting Diode

    E-Print Network [OSTI]

    Patrik Hlobil; Peter P. Orth

    2015-02-17T23:59:59.000Z

    We investigate a semiconductor $p$-$n$ junction in contact with superconducting leads that is operated under forward bias as a light-emitting diode. The presence of superconductivity results in a significant increase of the electroluminescence in a certain frequency window. We demonstrate that the tunneling of Cooper pairs induces an additional luminescence peak on resonance. There is a transfer of superconducting to photonic coherence which results in the emission of entangled photon pairs and squeezing of the fluctuations in the quadrature amplitudes of the emitted light. The squeezing angle can be electrically manipulated by changing the relative phase of the order parameters in the superconductors. We finally derive the conditions for lasing in the system and show that the laser threshold is reduced due to superconductivity. This shows how macroscopic coherence of a superconductor can be used to control the properties of light.

  9. Mid-ultraviolet light-emitting diode detects dipicolinic acid.

    SciTech Connect (OSTI)

    Bogart, Katherine Huderle Andersen; Lee, Stephen Roger; Temkin, Henryk (Texas Tech University, Lubbock, TX); Crawford, Mary Hagerott; Dasgupta, Purnendu K. (Texas Tech University, Lubbock, TX); Li, Qingyang (Texas Tech University, Lubbock, TX); Allerman, Andrew Alan; Fischer, Arthur Joseph

    2005-06-01T23:59:59.000Z

    Dipicolinic acid (DPA, 2,6-pyridinedicarboxylic acid) is a substance uniquely present in bacterial spores such as that from anthrax (B. anthracis). It is known that DPA can be detected by the long-lived fluorescence of its terbium chelate; the best limit of detection (LOD) reported thus far using a large benchtop gated fluorescence instrument using a pulsed Xe lamp is 2 nM. We use a novel AlGaN light-emitting diode (LED) fabricated on a sapphire substrate that has peak emission at 291 nm. Although the overlap of the emission band of this LED with the absorption band of Tb-DPA ({lambda}{sub max} doublet: 273, 279 nm) is not ideal, we demonstrate that a compact detector based on this LED and an off-the-shelf gated photodetection module can provide an LOD of 0.4 nM, thus providing a basis for convenient early warning detectors.

  10. Linewidth-tunable laser diode array for rubidium laser pumping

    SciTech Connect (OSTI)

    Li Zhiyong; Tan Rongqing; Xu Cheng; Li Lin

    2013-02-28T23:59:59.000Z

    To optimise the pump source for a high-power diodepumped rubidium vapour laser, we have designed a laser diode array (LDA) with a narrowed and tunable linewidth and an external cavity formed by two volume Bragg gratings (VBGs). Through controlling the temperature differences between the two VBGs, the LDA linewidth, which was 1.8 nm before mounting the two VBGs, was tunable from 100 pm to 0.2 nm, while the output power changed by no more than 4 %. By changing simultaneously the temperature in both VBGs, the centre wavelength in air of the linewidth-tunable LDA was tunable from 779.40 nm to 780.05 nm. (control of laser radiation parameters)

  11. Model for Triplet State Engineering in Organic Light Emitting Diodes

    E-Print Network [OSTI]

    Prodhan, Suryoday; Ramasesha, S

    2014-01-01T23:59:59.000Z

    Engineering the position of the lowest triplet state (T1) relative to the first excited singlet state (S1) is of great importance in improving the efficiencies of organic light emitting diodes and organic photovoltaic cells. We have carried out model exact calculations of substituted polyene chains to understand the factors that affect the energy gap between S1 and T1. The factors studied are backbone dimerisation, different donor-acceptor substitutions and twisted geometry. The largest system studied is an eighteen carbon polyene which spans a Hilbert space of about 991 million. We show that for reverse intersystem crossing (RISC) process, the best system involves substituting all carbon sites on one half of the polyene with donors and the other half with acceptors.

  12. Luminescence properties of light-emitting diodes based on GaAs with the up-conversion Y{sub 2}O{sub 2}S:Er,Yb luminophor

    SciTech Connect (OSTI)

    Gruzintsev, A. N. [Russian Academy of Sciences, Institute of Problems of Microelectronics Technology (Russian Federation)], E-mail: gran@ipmt-hpm.ac.ru; Barthou, C.; Benalloul, P. [Institute des NanoSciences (France)

    2008-03-15T23:59:59.000Z

    Y{sub 2}O{sub 2}S luminophors doped with Er{sup 3+} and Yb{sup 3+} ions are produced by means of solid-phase synthesis and deposited onto standard AL123A infrared light-emitting diodes. When excited with 940 nm radiation from a light-emitting diode, the structures exhibit intense visible up-conversion luminescence. A maximal brightness of 2340 cd/m{sup 2} of green and red up-conversion luminescence at corresponding wavelengths around 550 and 600 nm is observed for the Y{sub 2}O{sub 2}S compound doped with 2 at % Er{sup 3+} ions and 6 at % Yb{sup 3+} ions. The ratio of the intensity of green (or red) up-conversion luminescence to the intensity of infrared Stokes luminescence increases with increasing applied voltage. The efficiency of visible emission of the light-emitting diode structures is {eta} = 1.2 lm/W at an applied voltage of 1.5 V.

  13. High efficiency 2 micrometer laser utilizing wing-pumped Tm.sup.3+ and a laser diode array end-pumping architecture

    DOE Patents [OSTI]

    Beach, Raymond J. (Livermore, CA)

    1997-01-01T23:59:59.000Z

    Wing pumping a Tm.sup.3+ doped, end pumped solid state laser generates 2 .mu.m laser radiation at high average powers with high efficiency. Using laser diode arrays to end-pump the laser rod or slab in the wing of the Tm.sup.3+ absorption band near 785 nm results in 2-for-1 quantum efficiency in Tm.sup.3+ because high Tm.sup.3+ concentrations can be used. Wing pumping allows the thermal power generated in the rod or slab to be distributed over a large enough volume to make thermal management practical in the laser gain medium even at high average power operation. The approach is applicable to CW, Q-switched, and rep-pulsed free-laser operation.

  14. High efficiency 2 micrometer laser utilizing wing-pumped Tm{sup 3+} and a laser diode array end-pumping architecture

    DOE Patents [OSTI]

    Beach, R.J.

    1997-11-18T23:59:59.000Z

    Wing pumping a Tm{sup 3+} doped, end pumped solid state laser generates 2 {micro}m laser radiation at high average powers with high efficiency. Using laser diode arrays to end-pump the laser rod or slab in the wing of the Tm{sup 3+} absorption band near 785 nm results in 2-for-1 quantum efficiency in Tm{sup 3+} because high Tm{sup 3+} concentrations can be used. Wing pumping allows the thermal power generated in the rod or slab to be distributed over a large enough volume to make thermal management practical in the laser gain medium even at high average power operation. The approach is applicable to CW, Q-switched, and rep-pulsed free-laser operation. 7 figs.

  15. Studies of solution-processed organic light-emitting diodes and their materials

    SciTech Connect (OSTI)

    Hellerich, Emily [Ames Laboratory] [Ames Laboratory

    2013-05-15T23:59:59.000Z

    A hitherto unexplored approach is presented in which a small molecule is used as a host to polymer guests in solution-processed OLEDs. We find that the small molecule host results in much more efficient devices than the often-used alternative polymer host when used for the guests presented. It is likely that nano- and microstructural differences between the hosts contribute to the improvements, which highlights some interesting characteristics that can help to better understand the nature of these mixtures. A number of the guests used in this study were newly synthesized benzobisoxazole-based copolymers. New organic copolymers are presented that are based on the chemical structure of benzobisoxazoles, which have been shown in the past to have good electron transporting properties. The novel concept in this publication pertains to a change in the direction of polymerization, also known as the conjugation pathway, which we show increases the emission efficiency. This work highlights a unique and useful property of organic semiconducting materials in that they can be synthesized to create the desired characteristics. Earlier work is described that kick-started in our research group the use of small molecules in solution-processed OLEDs. Originally these devices were to be used in magnetoresistance studies, but the project took a different path when the devices were more efficient than expected. The efficient use of small molecules in solution-processed OLEDs is highlighted, which at the time was not often the case. Also, the important observation of the effect of solvent choice on the resultant film is emphasized, with discussion of the likely cause of these effects. Microcavity OLEDs are introduced in which the transparent anode ITO is replaced with semi-transparent thin silver, which creates an optical cavity within the devices. The goal was to expand a previous work that created an on-chip spectrometer covering wavelengths 493 to 639 nm. In this case, a spin-coated mixed emitting layer (EML) is used, consisting of a polymer and a small molecule that both emit in the near UV and blue. The resulting combined spectra gives a wide band that can be used to create narrow microcavity emission peaks of 373 to 469 nm, depending on the device thickness (i.e. the cavity’s optical length). In the process of this effort, the mixed EML presented interesting complexities that we attempt to explain via simulation and morphology study.

  16. Composition-Morphology-Property Relations For Giant Magnetoresistance Multilayers Grown By RF Diode Sputtering

    E-Print Network [OSTI]

    Wadley, Haydn

    University of Virginia, Charlottesville, VA 22903 D. Brownell Nonvolatile Electronics, Inc. Eden Prairie, MN, Inc. (Eden Prairie, MN) using a Randex Model 2400-6J RF diode system. Briefly, the diameter

  17. Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes

    E-Print Network [OSTI]

    Sun, Xiaochen

    We report what we believe to be the first demonstration of direct bandgap electroluminescence (EL) from Ge/Si heterojunction light-emitting diodes (LEDs) at room temperature. In-plane biaxial tensile strain is used to ...

  18. Efficiency loss mechanisms in colloidal quantum-dot light-emitting diodes

    E-Print Network [OSTI]

    Shirasaki, Yasuhiro

    2013-01-01T23:59:59.000Z

    Saturated and tunable emission colors make colloidal quantum-dot light-emitting diodes (QD-LEDs) interesting for the next generation of display and lighting technologies. However, there still remain various hurdles to the ...

  19. A strategy for the use of light emitting diodes by autonomous underwater vehicles

    E-Print Network [OSTI]

    Curran, Joseph R. (Joseph Robinson)

    2004-01-01T23:59:59.000Z

    Light Emitting Diode (LED) technology has advanced dramatically in a few short years. An expensive and difficult to manufacture LED array containing nearly 100 individual LEDs and measuring at least 5 cm² can now be replaced ...

  20. Light Effects on the Charge Storage in the A-SI:H Pin Diode

    E-Print Network [OSTI]

    Wu, Shu-Hsien

    2013-04-19T23:59:59.000Z

    was verified with a pre-fabricated circuit which is a charge storage readout device. The diode under the long wavelength light illumination condition stored more charges than that under the short wavelength light illumination condition because the former could...

  1. Tunable Substrate Integrated Waveguide Filters Implemented with PIN Diodes and RF MEMS Switches 

    E-Print Network [OSTI]

    Armendariz, Marcelino

    2012-02-14T23:59:59.000Z

    This thesis presents the first fully tunable substrate integrated waveguide (SIW) filter implemented with PIN diodes and RF MEMS switches. The methodology for tuning SIW filters is explained in detail and is used to create three separate designs...

  2. average power diode-pumped: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    are required for numerous applications such as UV generation for lithography and pumping by a fiber- coupled diode bar1 generated 7-ps pulses with 4.5-W average power and...

  3. Attosecond Resolution Timing Jitter Characterization of Diode Pumped Femtosecond Cr:Lisaf Lasers

    E-Print Network [OSTI]

    Demirbas, Umit

    Two diode pumped Cr:LiSAF lasers are synchronized using a balanced nonlinear optical cross correlator. An integrated timing jitter of less than 156 as in the 10 kHz to 10 MHz range is measured.

  4. Colloidal semiconductor nanocrystals as nanoscale emissive probes in light emitting diodes and cell biology

    E-Print Network [OSTI]

    Huang, Hao, Ph. D. Massachusetts Institute of Technology

    2008-01-01T23:59:59.000Z

    This thesis employs colloidal semiconductor nanocrystals (NCs) as nanoscale emissive probes to investigate the physics of light emitting diodes (LEDs), as well as to unveil properties of cells that conventional imaging ...

  5. Tunable Substrate Integrated Waveguide Filters Implemented with PIN Diodes and RF MEMS Switches

    E-Print Network [OSTI]

    Armendariz, Marcelino

    2012-02-14T23:59:59.000Z

    This thesis presents the first fully tunable substrate integrated waveguide (SIW) filter implemented with PIN diodes and RF MEMS switches. The methodology for tuning SIW filters is explained in detail and is used to create three separate designs...

  6. Difference-frequency generation in a butt-join diode laser

    SciTech Connect (OSTI)

    Zvonkov, B. N.; Biryukov, A. A.; Nekorkin, S. M. [Nizhni-Novgorod State University, Research Physicotechnical Institute (Russian Federation); Aleshkin, V. Ya., E-mail: aleshkin@ipm.sci-nnov.ru; Gavrilenko, V. I.; Dubinov, A. A.; Maremyanin, K. V.; Morozov, S. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2009-02-15T23:59:59.000Z

    The intracavity difference-frequency generation in the middle-infrared region in the GaAs/InGaAs/InGaP butt-join diode lasers with quantum wells is experimentally studied.

  7. External-cavity designs for phase-coupled laser diode arrays

    E-Print Network [OSTI]

    Lucas-Leclin, Gaelle; Georges, Patrick; Michel, Nicolas; Calligaro, Michel; Krakowski, Michel; Lim, Jun; Sujecki, Slawomir; Larkins, Eric

    2010-01-01T23:59:59.000Z

    We describe passive phase-locking architectures based on external-cavity setups to improve the brightness of diode laser bars. Volume Bragg gratings are used to stabilize the lase line. Numerical modelling and experimental results will be presented.

  8. Growth and characterization of mid-infrared phosphide-based semiconductor diode lasers

    E-Print Network [OSTI]

    Chi, Pei-Chun

    2010-01-01T23:59:59.000Z

    A diode laser emitting at mid-infrared wavelength (2~5 pm) is an ideal light source for petrochemical or industrial-important gas sensing. Antimony-based III-V compound semiconductor material is the most prominent pseudomorphic ...

  9. Innovative Development of Next Generation and Energy Efficient Solid State Light Sources for General Illumination

    SciTech Connect (OSTI)

    Ian Ferguson

    2006-07-31T23:59:59.000Z

    This two year program resulted in a novel broadband spectrally dynamic solid state illumination source (BSDLED) that uses a dual wavelength light emitting diode (LED) and combinations of phosphors to create a broadband emission that is real-time controllable. Four major focuses of this work were as follows: (1) creation of a two terminal dual wavelength LED with control of the relative intensities of the two emission peaks, (2) bandgap modeling of the two terminal dual LED to explain operation based on the doping profile, (3) novel use of phosphor combinations with dual LEDs to create a broadband spectral power distribution that can be varied to mimic a blackbody radiator over a certain range and (4) investigation of novel doping schemes to create tunnel junctions or equivalent buried current spreading layers in the III-nitrides. Advances were achieved in each of these four areas which could lead to more efficient solid state light sources with greater functionality over existing devices. The two-terminal BSDLED is an important innovation for the solid-state lighting industry as a variable spectrum source. A three-terminal dual emitter was also investigated and appears to be the most viable approach for future spectrally dynamic solid state lighting sources. However, at this time reabsorption of emission between the two active regions limits the usefulness of this device for illumination applications.

  10. Solid Xenon Project

    SciTech Connect (OSTI)

    Balakishiyeva, Durdana N.; Saab, Tarek [University of Florida (United States); Mahapatra, Rupak [Texas A and M University (United States); Yoo, Jonghee [FNAL (United States)

    2010-08-30T23:59:59.000Z

    Crystals like Germanium and Silicon need to be grown in specialized facilities which is time and money costly. It takes many runs to test the detector once it's manufactured and mishaps are very probable. It is of a great challenge to grow big germanium crystals and that's why stacking them up in a tower is the only way at the moment to increase testing mass. Liquid Noble gas experiments experiencing contamination problems, their predicted energy resolution at 10 keV and lower energy range is not as good as predicted. Every experiment is targeting one specific purpose, looking for one thing. Why not to design an experiment that is diverse and build a detector that can search for Dark Matter, Solar Axions, Neutrinoless Double Beta decay, etc. Solid Xenon detector is such detector. We designed a simple Xenon crystal growing chamber that was put together at Fermi National Accelerator Laboratory. The first phase of this experiment was to demonstrate that a good, crack free Xenon crystal can be grown (regardless of many failed attempts by various groups) and our first goal, 1 kg crystal, was successful.

  11. Optimal Solid Space Tower

    E-Print Network [OSTI]

    Alexander Bolonkin

    2007-01-08T23:59:59.000Z

    Theory and computations are provided for building of optimal (minimum weight) solid space towers (mast) up to one hundred kilometers in height. These towers can be used for tourism; scientific observation of space, observation of the Earth surface, weather and upper atmosphere experiment, and for radio, television, and communication transmissions. These towers can also be used to launch spaceships and Earth satellites. These macroprojects are not expensive. They require strong hard material (steel). Towers can be built using present technology. Towers can be used (for tourism, communication, etc.) during the construction process and provide self-financing for further construction. The tower design does not require human work at high altitudes; the tower is separated into sections; all construction can be done at the Earth surface. The transport system for a tower consists of a small engine (used only for friction compensation) located at the Earth surface. Problems involving security, control, repair, and stability of the proposed towers are addressed in other cited publications.

  12. Illinois Solid Waste Management Act (Illinois)

    Broader source: Energy.gov [DOE]

     It is the purpose of this Act to reduce reliance on land disposal of solid waste, to encourage and promote alternative means of managing solid waste, and to assist local governments with solid...

  13. Eugene Solid Waste Management Market Analysis

    E-Print Network [OSTI]

    Oregon, University of

    Eugene Solid Waste Management Market Analysis Prepared By: Mitchell Johnson Alex Sonnichsen #12;Eugene Solid Waste Management Market Analysis May 2012 Page 1 Summary This study examines the economic impact of the solid waste management system

  14. An experimental study of low-frequency amplitude noise in a fibre Bragg grating laser diode

    SciTech Connect (OSTI)

    Zholnerov, V S [Russian Institute of Radionavigation and Time, St.Petersburg (Russian Federation); Ivanov, A V; Kurnosov, V D; Kurnosov, K V; Romantsevich, V I; Chernov, R V [Open Joint-Stock Company M.F. Stel'makh Polyus Research Institute, Moscow (Russian Federation)

    2013-09-30T23:59:59.000Z

    We have studied the amplitude noise in a fibre Bragg grating laser diode. It has been shown that discontinuities in noise characteristics correlate with those in the power – current and spectral characteristics of the laser diode, whereas the noise characteristics of the pump source have no such discontinuities. The highest noise level has been observed at pump currents corresponding to concurrent generation of two longitudinal modes. (lasers)

  15. Stacked switchable element and diode combination with a low breakdown switchable element

    DOE Patents [OSTI]

    Wang, Qi (Littleton, CO); Ward, James Scott (Englewood, CO); Hu, Jian (Englewood, CO); Branz, Howard M. (Boulder, CO)

    2012-06-19T23:59:59.000Z

    A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship. The semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a low-density forming current and/or a low voltage.

  16. Stiffening solids with liquid inclusions

    E-Print Network [OSTI]

    Robert W. Style; Rostislav Boltyanskiy; Benjamin Allen; Katharine E. Jensen; Henry P. Foote; John S. Wettlaufer; Eric R. Dufresne

    2014-07-24T23:59:59.000Z

    From bone and wood to concrete and carbon fibre, composites are ubiquitous natural and engineering materials. Eshelby's inclusion theory describes how macroscopic stress fields couple to isolated microscopic inclusions, allowing prediction of a composite's bulk mechanical properties from a knowledge of its microstructure. It has been extended to describe a wide variety of phenomena from solid fracture to cell adhesion. Here, we show experimentally and theoretically that Eshelby's theory breaks down for small liquid inclusions in a soft solid. In this limit, an isolated droplet's deformation is strongly size-dependent with the smallest droplets mimicking the behaviour of solid inclusions. Furthermore, in opposition to the predictions of conventional composite theory, we find that finite concentrations of small liquid inclusions enhance the stiffness of soft solids. A straight-forward extension of Eshelby's theory, accounting for the surface tension of the solid-liquid interface, explains our experimental observations. The counterintuitive effect of liquid-stiffening of solids is expected whenever droplet radii are smaller than an elastocapillary length, given by the ratio of the surface tension to Young's modulus of the solid matrix.

  17. 0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; G Nichols; DM Depoy; LR Danielson; H Ehsani; KD Rahner; J Azarkevich; P Talamo; E Brown; S Burger; P Fourspring; W Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Marinelli; D Donetski; S Anikeev; G Belenky; S Luryi; DR Taylor; J Hazel

    2004-06-09T23:59:59.000Z

    Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm{sup 2} respectively at operating at temperatures of T{sub radiator} = 950 C and T{sub diode} = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and {approx}0.85 W/cm{sup 2} could be attained under the above operating temperatures.

  18. Electrical and thermal finite element modeling of arc faults in photovoltaic bypass diodes.

    SciTech Connect (OSTI)

    Bower, Ward Isaac; Quintana, Michael A.; Johnson, Jay

    2012-01-01T23:59:59.000Z

    Arc faults in photovoltaic (PV) modules have caused multiple rooftop fires. The arc generates a high-temperature plasma that ignites surrounding materials and subsequently spreads the fire to the building structure. While there are many possible locations in PV systems and PV modules where arcs could initiate, bypass diodes have been suspected of triggering arc faults in some modules. In order to understand the electrical and thermal phenomena associated with these events, a finite element model of a busbar and diode was created. Thermoelectrical simulations found Joule and internal diode heating from normal operation would not normally cause bypass diode or solder failures. However, if corrosion increased the contact resistance in the solder connection between the busbar and the diode leads, enough voltage potentially would be established to arc across micron-scale electrode gaps. Lastly, an analytical arc radiation model based on observed data was employed to predicted polymer ignition times. The model predicted polymer materials in the adjacent area of the diode and junction box ignite in less than 0.1 seconds.

  19. Investigations of shot reproducibility for the SMP diode at 4.5 MV.

    SciTech Connect (OSTI)

    Bennett, Nichelle [National Security Technologies, LLC, Las Vegas, NV] [National Security Technologies, LLC, Las Vegas, NV; Crain, Marlon D. [National Security Technologies, LLC, Las Vegas, NV] [National Security Technologies, LLC, Las Vegas, NV; Droemer, Darryl W. [National Security Technologies, LLC, Las Vegas, NV] [National Security Technologies, LLC, Las Vegas, NV; Gignac, Raymond Edward [National Security Technologies, LLC, Las Vegas, NV] [National Security Technologies, LLC, Las Vegas, NV; Lare, Gregory A. [National Security Technologies, LLC, Las Vegas, NV] [National Security Technologies, LLC, Las Vegas, NV; Molina, Isidro [National Security Technologies, LLC, Las Vegas, NV] [National Security Technologies, LLC, Las Vegas, NV; Obregon, Rafael [National Security Technologies, LLC, Las Vegas, NV] [National Security Technologies, LLC, Las Vegas, NV; Smith, Chase C. [National Security Technologies, LLC, Las Vegas, NV] [National Security Technologies, LLC, Las Vegas, NV; Wilkins, Frank Lee [National Security Technologies, LLC, Las Vegas, NV] [National Security Technologies, LLC, Las Vegas, NV; Welch, Dale Robert [Voss Scienti c, LLC, Albuquerque, NM] [Voss Scienti c, LLC, Albuquerque, NM; Cordova, Steve Ray; Gallegos, M.; Johnston, Mark D.; Kiefer, Mark Linden; Leckbee, Joshua J.; Nielsen, Daniel Scott; Oliver, Bryan Velten; Renk, Timothy Jerome; Romero, Tobias; Webb, Timothy Jay; Ziska, Derek Raymond

    2013-11-01T23:59:59.000Z

    In experiments conducted on the RITS-6 accelerator, the SMP diode exhibits sig- ni cant shot-to-shot variability. Speci cally, for identical hardware operated at the same voltage, some shots exhibit a catastrophic drop in diode impedance. A study is underway to identify sources of shot-to-shot variations which correlate with diode impedance collapse. To remove knob emission as a source, only data from a shot series conducted with a 4.5-MV peak voltage are considered. The scope of this report is limited to sources of variability which occur away from the diode, such as power ow emission and trajectory changes, variations in pulsed power, dustbin and transmission line alignment, and di erent knob shapes. We nd no changes in the transmission line hardware, alignment, or hardware preparation methods which correlate with impedance collapse. However, in classifying good versus poor shots, we nd that there is not a continuous spectrum of diode impedance behavior but that the good and poor shots can be grouped into two distinct impedance pro les. This result forms the basis of a follow-on study focusing on the variability resulting from diode physics. 3

  20. Solid Waste Management Act (West Virginia)

    Broader source: Energy.gov [DOE]

    In addition to establishing a comprehensive program of controlling all phases of solid waste management and assigning responsibilities for solid waste management to the Secretary of Department of...

  1. 100 MHz NMR Thorium (Solids) | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    100 MHz NMR Thorium (Solids) 100 MHz NMR Thorium (Solids) Research applications Samples containing paramagnetics Soils (SOM and NOM) Metal oxide materials for catalysis...

  2. Solid Waste Management Program (South Dakota)

    Broader source: Energy.gov [DOE]

    South Dakota's Solid Waste Management Program offers loans and grants for solid waste disposal, recycling, and waste tire projects. Funds are available for private or public projects, and...

  3. Chapter 47 Solid Waste Facilities (Kentucky)

    Broader source: Energy.gov [DOE]

    This chapter establishes the permitting standards for solid waste sites or facilities, the standards applicable to all solid waste sites or facilities, and the standards for certification of...

  4. High-Efficiency Nitride-Based Solid-State Lighting

    SciTech Connect (OSTI)

    Paul T. Fini; Shuji Nakamura

    2005-07-30T23:59:59.000Z

    In this final technical progress report we summarize research accomplished during Department of Energy contract DE-FC26-01NT41203, entitled ''High-Efficiency Nitride-Based Solid-State Lighting''. Two teams, from the University of California at Santa Barbara (Principle Investigator: Dr. Shuji Nakamura) and the Lighting Research Center at Rensselaer Polytechnic Institute (led by Dr. N. Narendran), pursued the goals of this contract from thin film growth, characterization, and packaging/luminaire design standpoints. The UCSB team initially pursued the development of blue gallium nitride (GaN)-based vertical-cavity surface-emitting lasers, as well as ultraviolet GaN-based light emitting diodes (LEDs). In Year 2, the emphasis shifted to resonant-cavity light emitting diodes, also known as micro-cavity LEDs when extremely thin device cavities are fabricated. These devices have very directional emission and higher light extraction efficiency than conventional LEDs. Via the optimization of thin-film growth and refinement of device processing, we decreased the total cavity thickness to less than 1 {micro}m, such that micro-cavity effects were clearly observed and a light extraction efficiency of over 10% was reached. We also began the development of photonic crystals for increased light extraction, in particular for so-called ''guided modes'' which would otherwise propagate laterally in the device and be re-absorbed. Finally, we pursued the growth of smooth, high-quality nonpolar a-plane and m-plane GaN films, as well as blue light emitting diodes on these novel films. Initial nonpolar LEDs showed the expected behavior of negligible peak wavelength shift with increasing drive current. M-plane LEDs in particular show promise, as unpackaged devices had unsaturated optical output power of {approx} 3 mW at 200 mA drive current. The LRC's tasks were aimed at developing the subcomponents necessary for packaging UCSB's light emitting diodes, and packaging them to produce a white light fixture. During the third and final year of the project, the LRC team investigated alternate packaging methods for the white LED device to achieve at least 25 percent more luminous efficacy than traditional white LEDs; conducted optical ray-tracing analyses and human factors studies to determine the best form factor for the white light source under development, in terms of high luminous efficacy and greater acceptance by subjects; and developed a new die encapsulant using silicone-epoxy resins that showed less yellowing and slower degradation. At the conclusion of this project, the LRC demonstrated a new packaging method, called scattered photon extraction (SPE), that produced an average luminous flux and corresponding average efficacy of 90.7 lm and 36.3 lm/W, respectively, compared with 56.5 lm and 22.6 lm/W for a similar commercial white LED package. At low currents, the SPE package emitted white light with an efficacy of over 80 lm/W and had chromaticity values very close to the blackbody locus. The SPE package showed an overall improvement of 61% for this particular comparison, exceeding the LRC's third-year goal of 25% improvement.

  5. Cogeneration/Cogeneration - Solid Waste

    E-Print Network [OSTI]

    Pyle, F. B.

    1980-01-01T23:59:59.000Z

    This paper reviews the rationale for cogeneration and basic turbine types available. Special considerations for cogeneration in conjunction with solid waste firing are outlined. Optimum throttle conditions for cogeneration are significantly...

  6. Solid Waste Disposal Facilities (Massachusetts)

    Broader source: Energy.gov [DOE]

    These sections articulate rules for the maintenance and operation of solid waste disposal facilities, as well as site assignment procedures. Applications for site assignment will be reviewed by the...

  7. Solid Waste Facilities Regulations (Massachusetts)

    Broader source: Energy.gov [DOE]

    This chapter of the Massachusetts General Laws governs the operation of solid waste facilities. It seeks to encourage sustainable waste management practices and to mitigate adverse effects, such as...

  8. Solid Waste Management Rules (Vermont)

    Broader source: Energy.gov [DOE]

    These rules establish procedures and standards to protect public health and the environment by ensuring the safe, proper, and sustainable management of solid waste in Vermont. The rules apply to...

  9. Cogeneration/Cogeneration - Solid Waste 

    E-Print Network [OSTI]

    Pyle, F. B.

    1980-01-01T23:59:59.000Z

    This paper reviews the rationale for cogeneration and basic turbine types available. Special considerations for cogeneration in conjunction with solid waste firing are outlined. Optimum throttle conditions for cogeneration are significantly...

  10. Energy Department Announces $10 Million for Innovative, Energy...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    the country. This funding will accelerate the development of high-quality light-emitting diode (LED) and organic light-emitting diode (OLED) products with the potential to...

  11. Energy Department Announces $10 Million to Advance Innovative...

    Broader source: Energy.gov (indexed) [DOE]

    the country. This funding will help accelerate the development of high-quality light-emitting diode (LED) and organic light-emitting diode (OLED) products with the potential to...

  12. Hyperfine-Field-Mediated Spin Beating in Electrostatically Bound Charge Carrier Pairs D. R. McCamey, K. J. van Schooten, W. J. Baker, S.-Y. Lee, S.-Y. Paik, J. M. Lupton,* and C. Boehme

    E-Print Network [OSTI]

    McCamey, Dane

    of the current through an organic light emitting diode under coherent spin-resonant excitation. At weak driving processes responsible for light emission in organic light-emitting diodes (OLEDs), such local variations

  13. Energy Department Offers $10 Million for Energy-Saving Lighting...

    Energy Savers [EERE]

    technologies. This funding will help accelerate the development of high-quality light-emitting diode (LED) and organic light-emitting diode (OLED) products with the potential to...

  14. PUBLISHED ONLINE: 21 JULY 2013 | DOI: 10.1038/NMAT3711 User-interactive electronic skin for instantaneous

    E-Print Network [OSTI]

    California at Irvine, University of

    diode display with red, green and blue pixels. In this system, organic light-emitting diodes (OLEDs pressure but also provides an instantaneous visual response through a built-in active-matrix organic light-emitting

  15. Triplet Formation by Charge Recombination in Thin Film Blends of Perylene Red and Pyrene: Developing a Target Model for the

    E-Print Network [OSTI]

    van Stokkum, Ivo

    , photovoltaic cells, field effect transistors, and light-emitting diodes. These activities are aimed at product in xerography,9 organic field-effect transistors (OFETs),3,10 organic light-emitting diodes (OLEDs),11

  16. aqueous vanadium pentoxide: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    diodes Materials Science Websites Summary: to be an efficient anode for organic light-emitting diode OLED X. L. Zhu, J. X. Sun, H. J. Peng, Z. G. Meng, M. Wong an ultrathin...

  17. activation vanadium alloys: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    diodes Materials Science Websites Summary: to be an efficient anode for organic light-emitting diode OLED X. L. Zhu, J. X. Sun, H. J. Peng, Z. G. Meng, M. Wong an ultrathin...

  18. anodic tantala films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    diodes Materials Science Websites Summary: to be an efficient anode for organic light-emitting diode OLED X. L. Zhu, J. X. Sun, H. J. Peng, Z. G. Meng, M. Wong an ultrathin...

  19. activation vanadium alloy: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    diodes Materials Science Websites Summary: to be an efficient anode for organic light-emitting diode OLED X. L. Zhu, J. X. Sun, H. J. Peng, Z. G. Meng, M. Wong an ultrathin...

  20. Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

    E-Print Network [OSTI]

    Gilchrist, James F.

    Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes Keywords: III-Nitride InGaN QWs Light-emitting diodes Efficiency-droop a b s t r a c t Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well (QW) based light-emitting diodes

  1. Green Light-Emitting Diode Makes Highly Efficient White Light; The Spectrum of Clean Energy Innovation (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2010-06-01T23:59:59.000Z

    Fact sheet describing NREL's green light emitting diode that can lead to higher efficiency white light used in indoor lighting applications.

  2. Demonstration Assessment of Light-Emitting Diode Roadway Lighting on the FDR Drive in New York, New York

    SciTech Connect (OSTI)

    Myer, Michael; Hazra, Oindrila; Kinzey, Bruce R.

    2011-12-01T23:59:59.000Z

    This a report about a field study of light-emitting diodes street lights by four different manufacturers installed on the FDR Drive in New York City, NY.

  3. Flat-response x-ray-diode-detector development

    SciTech Connect (OSTI)

    Tirsell, G.

    1982-10-01T23:59:59.000Z

    In this report we discuss the design of an improved sub-nanosecond flat response x-ray diode detector needed for ICF diagnostics. This device consists of a high Z cathode and a complex filter tailored to flatten the response so that the total x-ray energy below 1.5 keV can be measured using a single detector. Three major problems have become evident as a result of our work with the original LLNL design including deviation from flatness due to a peak in the response below 200 eV, saturation at relatively low x-ray fluences, and long term gold cathode instability. We are investigating grazing incidence reflection to reduce the response below 200 eV, new high Z cathode materials for long term stability, and a new complex filter for improved flatness. Better saturation performance will require a modified XRD detector under development with reduced anode to cathode spacing and increased anode bias voltage.

  4. White Light Emitting Diode Development for General Illumination Applications

    SciTech Connect (OSTI)

    James Ibbetson

    2006-05-01T23:59:59.000Z

    This report contains a summary of technical achievements during a 3-year project aimed at developing the chip and packaging technology necessary to demonstrate efficient, high flux light-emitting diode (LED) arrays using Cree's gallium nitride/silicon carbide (GaN/SiC) LED technology as the starting point. Novel chip designs and fabrication processes are described that led to high power blue LEDs that achieved 310 mW of light output at 350 mA drive current, corresponding to quantum and wall plug efficiencies of 32.5% and 26.5%, respectively. When combined with phosphor, high power white LEDs with luminous output of 67 lumens and efficacy of 57 lumens per watt were also demonstrated. Advances in packaging technology are described that enabled compact, multi-chip white LED lamp modules with 800-1000 lumens output at efficacies of up to 55 lumens per watt. Lamp modules with junction-to-ambient thermal resistance as low as 1.7 C/watt have also been demonstrated.

  5. HIGH-EFFICIENCY NITRIDE-BASED SOLID-STATE LIGHTING

    SciTech Connect (OSTI)

    Paul T. Fini; Shuji Nakamura

    2003-10-30T23:59:59.000Z

    In this second annual report we summarize the progress in the second-year period of Department of Energy contract DE-FC26-01NT41203, entitled ''High- Efficiency Nitride-Based Solid-State Lighting''. The two teams, from the University of California at Santa Barbara (Principle Investigator: Dr. Shuji Nakamura) and Rensselaer Polytechnic Institute (led by Dr. N. Narendran), are pursuing the goals of this contract from thin film growth, characterization, and packaging standpoints. The UCSB team has recently made significant progress in the development of light-emitting diodes (LEDs) with AlGaN active regions emitting in the ultraviolet (UV), resonant-cavity LEDs (RCLEDs), as well as lateral epitaxial overgrowth (LEO) techniques to obtain large-area non-polar GaN films with low average dislocation density. The Rensselaer team has benchmarked the performance of commercially available LED systems and has also conducted efforts to develop an optimized RCLED packaging scheme, including development of advanced epoxy encapsulant chemistries.

  6. Conversion of organic solids to hydrocarbons

    DOE Patents [OSTI]

    Greenbaum, Elias (Oak Ridge, TN)

    1995-01-01T23:59:59.000Z

    A method of converting organic solids to liquid and gaseous hydrocarbons includes impregnating an organic solid with photosensitizing ions and exposing the impregnated solid to light in a non-oxidizing atmosphere for a time sufficient to photocatalytically reduce the solid to at least one of a liquid and a gaseous hydrocarbon.

  7. Municipal Solid Waste in The United States

    E-Print Network [OSTI]

    Laughlin, Robert B.

    2007 Facts and Figures Municipal Solid Waste in The United States #12;United States Environmental Protection Agency Office of Solid Waste (5306P) EPA530-R-08-010 November 2008 www.epa.gov #12;MUNICIPAL SOLID ............................................................................................................................... 1 WHAT IS INCLUDED IN MUNICIPAL SOLID WASTE

  8. Municipal Solid Waste in The United States

    E-Print Network [OSTI]

    Barlaz, Morton A.

    2011 Facts and Figures Municipal Solid Waste in The United States #12;United States Environmental Protection Agency Office of Solid Waste (5306P) EPA530-R-13-001 May 2013 www.epa.gov #12;MUNICIPAL SOLID WASTE IN THE UNITED STATES: 2011 FACTS AND FIGURES Table of Contents Chapter Page MUNICIPAL SOLID WASTE

  9. Conversion of organic solids to hydrocarbons

    DOE Patents [OSTI]

    Greenbaum, E.

    1995-05-23T23:59:59.000Z

    A method of converting organic solids to liquid and gaseous hydrocarbons includes impregnating an organic solid with photosensitizing ions and exposing the impregnated solid to light in a non-oxidizing atmosphere for a time sufficient to photocatalytically reduce the solid to at least one of a liquid and a gaseous hydrocarbon. 5 Figs.

  10. Solid oxide electrochemical reactor science.

    SciTech Connect (OSTI)

    Sullivan, Neal P. (Colorado School of Mines, Golden, CO); Stechel, Ellen Beth; Moyer, Connor J. (Colorado School of Mines, Golden, CO); Ambrosini, Andrea; Key, Robert J. (Colorado School of Mines, Golden, CO)

    2010-09-01T23:59:59.000Z

    Solid-oxide electrochemical cells are an exciting new technology. Development of solid-oxide cells (SOCs) has advanced considerable in recent years and continues to progress rapidly. This thesis studies several aspects of SOCs and contributes useful information to their continued development. This LDRD involved a collaboration between Sandia and the Colorado School of Mines (CSM) ins solid-oxide electrochemical reactors targeted at solid oxide electrolyzer cells (SOEC), which are the reverse of solid-oxide fuel cells (SOFC). SOECs complement Sandia's efforts in thermochemical production of alternative fuels. An SOEC technology would co-electrolyze carbon dioxide (CO{sub 2}) with steam at temperatures around 800 C to form synthesis gas (H{sub 2} and CO), which forms the building blocks for a petrochemical substitutes that can be used to power vehicles or in distributed energy platforms. The effort described here concentrates on research concerning catalytic chemistry, charge-transfer chemistry, and optimal cell-architecture. technical scope included computational modeling, materials development, and experimental evaluation. The project engaged the Colorado Fuel Cell Center at CSM through the support of a graduate student (Connor Moyer) at CSM and his advisors (Profs. Robert Kee and Neal Sullivan) in collaboration with Sandia.

  11. Demonstration Assessment of Light-Emitting Diode (LED) Parking Lot Lighting in Leavenworth, KS

    SciTech Connect (OSTI)

    Myer, Michael; Kinzey, Bruce R.; Curry, Ku'uipo

    2011-05-06T23:59:59.000Z

    This report describes the process and results of a demonstration of solid-state lighting (SSL) technology in a commercial parking lot lighting application, under the U.S. Department of Energy (DOE) Solid-State Lighting Technology GATEWAY Demonstration Program. The parking lot is for customers and employees of a Walmart Supercenter in Leavenworth, Kansas and this installation represents the first use of the LED Parking Lot Performance Specification developed by the DOE’s Commercial Building Energy Alliance. The application is a parking lot covering more than a half million square feet, lighted primarily by light-emitting diodes (LEDs). Metal halide wall packs were installed along the building facade. This site is new construction, so the installed baseline(s) were hypothetical designs. It was acknowledged early on that deviating from Walmart’s typical design would reduce the illuminance on the site. Walmart primarily uses 1000W pulse-start metal halide (PMH) lamps. In order to provide a comparison between both typical design and a design using conventional luminaires providing a lower illuminance, a 400W PMH design was also considered. As mentioned already, the illuminance would be reduced by shifting from the PMH system to the LED system. The Illuminating Engineering Society of North America (IES) provides recommended minimum illuminance values for parking lots. All designs exceeded the recommended illuminance values in IES RP-20, some by a wider margin than others. Energy savings from installing the LED system compared to the different PMH systems varied. Compared to the 1000W PMH system, the LED system would save 63 percent of the energy. However, this corresponds to a 68 percent reduction in illuminance as well. In comparison to the 400W PMH system, the LED system would save 44 percent of the energy and provide similar minimum illuminance values at the time of relamping. The LED system cost more than either of the PMH systems when comparing initial costs. However, when the life-cycle costs from energy and maintenance were factored into the scenario, the LED system had lower costs at the end of a 10-year analysis period. The LED system had a 6.1 year payback compared to the 1000W PMH system and a 7.5 year payback versus the 400W PMH system. The costs reflect high initial cost for the LED luminaire, plus more luminaires and (subsequently) more poles for the LED system. The other major issue affecting cost effectiveness was that Leavenworth, Kansas has very low electricity costs. The melded rate for this site was $0.056 per kWh for electricity. However, if the national electricity rate of $0.1022/kWh was used the payback would change to between four and five years for the LED system. This demonstration met the GATEWAY requirements of saving energy, matching or improving illumination, and being cost effective. The project also demonstrated that the Commercial Building Energy Alliance (CBEA) specification works in practice. Walmart appreciated having an entire site lighted by LEDs to gain more experience with the technology. Walmart is reviewing the results of the demonstration as they consider their entire real estate portfolio.

  12. DOE Announces Selections from Solid-State Lighting Product Development...

    Broader source: Energy.gov (indexed) [DOE]

    stephanie.anderson@sylvania.com Recipient: SRI International Title: Cavity Light-Emitting Diode for Durable, High-Brightness and High-Efficiency Lighting Applications Summary:...

  13. Sandia Energy - (Lighting and) Solid-State Lighting: Science...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on the third and upcoming revolution (illumination). Topics cover the basics of light-emitting diode (LED) operation; a 200-year history of lighting technology; the importance of...

  14. Energy Department Provides $7 Million for Solid-State Lighting...

    Broader source: Energy.gov (indexed) [DOE]

    20 percent Duration: 24 months SRI International (Menlo Park, CA): Cavity Light-Emitting Diode for Durable, High-Brightness and High-Efficiency Lighting Applications. This...

  15. Solid-State Lighting Manufacturing Workshop | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and to help define a new DOE manufacturing initiative to reduce the cost of light-emitting diode (LED) products to competitive levels, ensure high product quality and...

  16. Sandia National Laboratories: (Lighting and) Solid-State Lighting...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on the third and upcoming revolution (illumination). Topics cover the basics of light-emitting diode (LED) operation; a 200-year history of lighting technology; the importance of...

  17. Atomic-scale Authentication Using Resonant Tunnelling Diodes

    E-Print Network [OSTI]

    J. Roberts; I. E. Bagci; M. A. M. Zawawi; J. Sexton; N. Hulbert; Y. J. Noori; M. P. Young; C. S. Woodhead; M. Missous; M. A. Migliorato; U. Roedig; R. J. Young

    2015-02-23T23:59:59.000Z

    The rapid development of technology has provided a wealth of resources enabling the trust of everyday interactions to be undermined. Authentication schemes aim to address this challenge by providing proof of identity. This can be achieved by using devices that, when challenged, give unique but reproducible responses. At present, these distinct signatures are commonly generated by physically unclonable functions, or PUFs. These devices provide a straightforward measurement of a physical characteristic of their structure that has inherent randomness, due to imperfections in the manufacturing process. These hard-to-predict physical responses can generate a unique identity that can be used for authentication without relying on the secrecy of stored data. However, the classical design of these devices limits both their size and security. Here we show that the extensively studied problematic fluctuations in the current-voltage measurements of resonant tunnelling diodes (RTDs) provide an uncomplicated, robust measurement that can function as a PUF without conventional resource limitations. This is possible due to quantum tunnelling within the RTD, and on account of these room temperature quantum effects, we term such devices QUFs - quantum unclonable functions. As a result of the current-voltage spectra being dependent on the atomic structure and composition of the nanostructure within the RTD, each device provides a high degree of uniqueness, whilst being impossible to clone or simulate, even with state-of-the-art technology. We have thus created PUF-like devices requiring the fewest resources which make use of quantum phenomena in a highly manufacturable electronic device operating at room temperature. Conventional spectral analysis techniques, when applied to our QUFs, will enable reliable generation of unpredictable unique identities which can be employed in advanced authentication systems.

  18. Solid-Liquid Interfacial Premelting

    E-Print Network [OSTI]

    Yang, Yang; Asta, Mark; Laird, Brian Bostian

    2013-02-28T23:59:59.000Z

    liquid-liquid miscibility gap, negligible solubility of Pb in the Al solid phase, and a large melting point separa- tion (600 K for Pb and 933 K for Al). We have previously reported results from MD simulations on this system at 625 K, a temperature just... undergoes a roughening transition about 100 K below the melting point of Al. Simulation details.—In our simulations of the Al-Pb solid-liquid interface, we employ a classical many-body potential developed by Landa et al. [42] to model the inter- atomic...

  19. Solid-state lithium battery

    DOE Patents [OSTI]

    Ihlefeld, Jon; Clem, Paul G; Edney, Cynthia; Ingersoll, David; Nagasubramanian, Ganesan; Fenton, Kyle Ross

    2014-11-04T23:59:59.000Z

    The present invention is directed to a higher power, thin film lithium-ion electrolyte on a metallic substrate, enabling mass-produced solid-state lithium batteries. High-temperature thermodynamic equilibrium processing enables co-firing of oxides and base metals, providing a means to integrate the crystalline, lithium-stable, fast lithium-ion conductor lanthanum lithium tantalate (La.sub.1/3-xLi.sub.3xTaO.sub.3) directly with a thin metal foil current collector appropriate for a lithium-free solid-state battery.

  20. Solid evacuated microspheres of hydrogen

    DOE Patents [OSTI]

    Turnbull, Robert J. (Urbana, IL); Foster, Christopher A. (Champaign, IL); Hendricks, Charles D. (Livermore, CA)

    1982-01-01T23:59:59.000Z

    A method is provided for producing solid, evacuated microspheres comprised of hydrogen. The spheres are produced by forming a jet of liquid hydrogen and exciting mechanical waves on the jet of appropriate frequency so that the jet breaks up into drops with a bubble formed in each drop by cavitation. The drops are exposed to a pressure less than the vapor pressure of the liquid hydrogen so that the bubble which is formed within each drop expands. The drops which contain bubbles are exposed to an environment having a pressure just below the triple point of liquid hydrogen and they thereby freeze giving solid, evacuated spheres of hydrogen.

  1. TRANSITION PATH SAMPLING STUDIES OF SOLID-SOLID TRANSFORMATIONS

    E-Print Network [OSTI]

    Gruenwald, Michael

    isomerizations, or transport processes in solids, are characterized by widely disparate timescales. While. Many processes occurring in nature and technology such as the folding of a protein or the transport the freezing point, can remain in this supercooled state for hours or even days. Thus, the time scale

  2. Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    GaN light-emitting diodes: Efficiency-limiting processes at high injection J. Vac. Sci. Technol. A 31

  3. ISSUANCE 2015-06-25: Energy Conservation Program: Test Procedures for Integrated Light-Emitting Diode Lamps, Supplemental Notice of Proposed Rulemaking

    Broader source: Energy.gov [DOE]

    Energy Conservation Program: Test Procedures for Integrated Light-Emitting Diode Lamps, Supplemental Notice of Proposed Rulemaking

  4. Method and apparatus for improving the performance of light emitting diodes

    DOE Patents [OSTI]

    Lowery, Christopher H. (Fremont, CA); McElfresh, David K. (Union City, CA); Burchet, Steve (Cedar Crest, NM); Adolf, Douglas B. (Albuquerque, NM); Martin, James (Tijeras, NM)

    1996-01-01T23:59:59.000Z

    A method for increasing the resistance of a light emitting diode and other semiconductor devices to extremes of temperature is disclosed. During the manufacture of the light emitting diode, a liquid coating is applied to the light emitting die after the die has been placed in its lead frame. After the liquid coating has been placed on the die and its lead frames, a thermosetting encapsulant material is placed over the coating. The operation that cures the thermosetting material leaves the coating liquid intact. As the die and the encapsulant expand and contract at different rates with respect to changes in temperature, and as in known light emitting diodes the encapsulating material adheres to the die and lead frames, this liquid coating reduces the stresses that these different rates of expansion and contraction normally cause by eliminating the adherence of the encapsulating material to the die and frame.

  5. Injection locking of a high power ultraviolet laser diode for laser cooling of ytterbium atoms

    E-Print Network [OSTI]

    Toshiyuki Hosoya; Martin Miranda; Ryotaro Inoue; Mikio Kozuma

    2014-12-02T23:59:59.000Z

    We developed a high-power laser system at a wavelength of 399 nm for laser cooling of ytterbium atoms with ultraviolet laser diodes. The system is composed of an external cavity laser diode providing frequency stabilized output at a power of 40 mW and another laser diode for amplifying the laser power up to 220 mW by injection locking. The systematic method for optimization of our injection locking can also be applied to high power light sources at any other wavelengths. Our system, which does not depend on complex nonlinear frequency-doubling, has great importance for implementing transportable optical lattice clocks, and is also useful for investigations on condensed matter physics or quantum information processing using cold atoms.

  6. Performance of a TiN-coated monolithic silicon pin-diode array under mechanical stress

    E-Print Network [OSTI]

    B. A. VanDevender; L. I. Bodine; A. W. Myers; J. F. Amsbaugh; M. A. Howe; M. L. Leber; R. G. H. Robertson; K. Tolich; T. D. Van Wechel; B. L. Wall

    2012-02-01T23:59:59.000Z

    The Karlsruhe Tritium Neutrino Experiment (KATRIN) will detect tritium beta- decay electrons that pass through its electromagnetic spectrometer with a highly- segmented monolithic silicon pin-diode focal-plane detector (FPD). This pin-diode array will be on a single piece of 500-{\\mu}m-thick silicon, with contact between titanium nitride (TiN) coated detector pixels and front-end electronics made by spring-loaded pogo pins. The pogo pins will exert a total force of up to 50N on the detector, deforming it and resulting in mechanical stress up to 50 MPa in the silicon bulk. We have evaluated a prototype pin-diode array with a pogo-pin connection scheme similar to the KATRIN FPD. We find that pogo pins make good electrical contact to TiN and observe no effects on detector resolution or reverse-bias leakage current which can be attributed to mechanical stress.

  7. Hydrogen sensing characteristics of semipolar (112{sup ¯}2) GaN Schottky diodes

    SciTech Connect (OSTI)

    Hyeon Baik, Kwang [School of Materials Science and Engineering, Hongik University, Jochiwon, Sejong 339-701 (Korea, Republic of); Kim, Hyonwoong; Jang, Soohwan, E-mail: jangmountain@dankook.ac.kr [Department of Chemical Engineering, Dankook University, Yongin 448-701 (Korea, Republic of); Lee, Sung-Nam [Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793 (Korea, Republic of); Lim, Eunju [Department of Applied Physics, Institute of Nanosensor and Biotechnology, Dankook University, Yongin 448-701 (Korea, Republic of); Pearton, S. J. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Ren, F. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)

    2014-02-17T23:59:59.000Z

    The hydrogen detection characteristics of semipolar (112{sup ¯}2) plane GaN Schottky diodes were investigated and compared to c-plane Ga- and N-polar and nonpolar a-plane (112{sup ¯}0) GaN diodes. The semipolar GaN diodes showed large current response to 4% hydrogen in nitrogen gas with an accompanying Schottky barrier reduction of 0.53?eV at 25?°C, and the devices exhibited full recovery to the initial current level upon switching to a nitrogen ambient. The current-voltage characteristics of the semipolar devices remained rectifying after hydrogen exposure, in sharp contrast to the case of c-plane N-polar GaN. These results show that the surface atom configuration and polarity play a strong role in hydrogen sensing with GaN.

  8. Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Keywords: GaInN/GaN Light emitting diode temperature Micro-Raman Photoluminescence Electroluminescence well light emitting diode (LED) dies is analyzed by micro-Raman, photoluminescence, cathodoluminescenceJunction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting

  9. Thickness-dependent changes in the optical properties of PPV-and PF-based polymer light emitting diodes

    E-Print Network [OSTI]

    Carter, Sue

    the thickness-dependent optical properties of single layer polymer light emitting diodes for two materials, poly the electronic and optical properties of these materials in light emitting diode LED structures.2 OurThickness-dependent changes in the optical properties of PPV- and PF-based polymer light emitting

  10. Yellow-green strained-InGaP quantum-well epitaxial-transparent-substrate light emitting diodes

    E-Print Network [OSTI]

    Yellow-green strained-InGaP quantum-well epitaxial-transparent-substrate light emitting diodes L March 2004 We present a strained-InGaP quantum-well light emitting diode LED operating in the green that InGaP alloys in this composition range are not lattice-matched to any traditional substrate material

  11. Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520525 nm employing graded growth-temperature profile

    E-Print Network [OSTI]

    Gilchrist, James F.

    Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520­525 nm employing current spreading and light extraction in GaN-based light emitting diodes Appl. Phys. Lett. 100, 061107 (2012) Electrically driven nanopyramid green light emitting diode Appl. Phys. Lett. 100, 061106 (2012

  12. C. Wetzel et al MRS Internet J. Nitride Semicond. Res. 10, 2 (2005) 1 Development of High Power Green Light Emitting Diode Chips

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2005-01-01T23:59:59.000Z

    Power Green Light Emitting Diode Chips C. Wetzel and T. Detchprohm Future Chips Constellation Abstract The development of high emission power green light emitting diodes chips using GaInN/GaN multi production-scale implementation of this green LED die process. Keywords: nitrides, light emitting diode

  13. InP-Based Oxide-Confined 16 p.m Microcavity Light Emitting Diodes Weidong Zhou, Omar Qasaimeh, and Pallab Bhattacharya

    E-Print Network [OSTI]

    Zhou, Weidong

    InP-Based Oxide-Confined 16 p.m Microcavity Light Emitting Diodes Weidong Zhou, Omar Qasaimeh light emitting diodes (MCLEDs) have been designed, fabricated and characterized. Oxide- confined MCLEDs region emission peak and cavity resonance peak. Key words: Microcavity light emitting diode (MCLED), wet

  14. Microcavity enhanced vertical-cavity light-emitting diodes U. Keller, G. R. Jacobovitz-Veselka, J. E. Cunningham, W. Y. Jan, B. Tell,

    E-Print Network [OSTI]

    Keller, Ursula

    Microcavity enhanced vertical-cavity light-emitting diodes U. Keller, G. R. Jacobovitz-Veselka, J-cavity light-emitting diode (LED) by continuously changing the microcavity resonance with respect for optical interconnects seems to be the light emitting diode (LED), or better yet, the microcavity en

  15. A micrometer-size movable light emitting area in a resonant tunneling light emitting diode

    SciTech Connect (OSTI)

    Pettinari, G., E-mail: giorgio.pettinari@cnr.it [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); National Research Council (CNR), Institute for Photonics and Nanotechnologies (IFN-CNR), Via Cineto Romano 42, 00156 Roma (Italy); Balakrishnan, N.; Makarovsky, O.; Campion, R. P.; Patanè, A. [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)] [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Polimeni, A.; Capizzi, M. [CNISM-Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma (Italy)] [CNISM-Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma (Italy)

    2013-12-09T23:59:59.000Z

    We report on the fabrication of a micrometer-size movable light emitting area in a GaAs/AlAs quantum well resonant tunneling p-i-n diode. The spatial position of the micrometer-size light emitting area shifts linearly with increasing applied bias, up to 30??m for a bias increment of 0.2?V. Also, the simultaneous resonant tunneling injection of both electrons and holes into the quantum well states is achieved at specific positions of the diode, thus resulting in a tenfold increase of the electroluminescence intensity.

  16. Power loss in open cavity diodes and a modified Child Langmuir Law

    E-Print Network [OSTI]

    Debabrata Biswas; Raghwendra Kumar; R. R. Puri

    2005-07-26T23:59:59.000Z

    Diodes used in most high power devices are inherently open. It is shown that under such circumstances, there is a loss of electromagnetic radiation leading to a lower critical current as compared to closed diodes. The power loss can be incorporated in the standard Child-Langmuir framework by introducing an effective potential. The modified Child-Langmuir law can be used to predict the maximum power loss for a given plate separation and potential difference as well as the maximum transmitted current for this power loss. The effectiveness of the theory is tested numerically.

  17. Parity-time electromagnetic diodes in a two-dimensional nonreciprocal photonic crystal

    SciTech Connect (OSTI)

    He Cheng; Lu Minghui; Chen Yanfeng [National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China); Heng Xin [Bio-Rad Laboratories, Hercules, California 94547 (United States); Feng Liang [Department of Electrical Engineering, California Institute of Technology, Pasadena, California 91125 (United States)

    2011-02-15T23:59:59.000Z

    We propose a kind of electromagnetic (EM) diode based on a two-dimensional nonreciprocal gyrotropic photonic crystal. This periodic microstructure has separately broken symmetries in both parity (P) and time-reversal (T) but obeys parity-time (PT) symmetry. This kind of diode could support bulk one-way propagating modes either for group velocity or phase velocity with various types of negative and positive refraction. This symmetry-broken system could be a platform to realize abnormal photoelectronic devices, and it may be analogous to an electron counterpart with one-way features.

  18. X-ray detectors based on GaN Schottky diodes

    SciTech Connect (OSTI)

    Duboz, Jean-Yves; Frayssinet, Eric; Chenot, Sebastien [CRHEA, CNRS, Rue Bernard Gregory, Sophia Antipolis, F-06560 Valbonne (France); Reverchon, Jean-Luc [THALES R and T, Campus Polytechnique, 1 avenue Augustin Fresnel, F-91767 Palaiseau Cedex (France); Idir, Mourad [Synchrotron SOLEIL L'Orme des Merisiers, Saint-Aubin-BP 48 91192, GIF-sur-Yvette Cedex (France)

    2010-10-18T23:59:59.000Z

    GaN Schottky diodes have been fabricated and tested as x-ray detectors in the range from 6 to 21 keV. The spectral response has been measured and is compared to its theoretical value. The study of the response and its temporal dynamics as a function of the bias allows to identify a photovoltaic behavior at low bias and a photoconductive one at larger reverse biases. The GaN diode turned out to be linear as a function of the incident power. The noise and detectivity are given and discussed.

  19. A study on the effects of parasitic packaging on diode digital phase shifters

    E-Print Network [OSTI]

    Bong, Jerry Swie Thang

    1987-01-01T23:59:59.000Z

    operating in the W-band with superior performance. A great deal of efFort has been put into the research and development of the digital loaded line microwave phase shifters using PIN diodes [7], [8], [9]. However, research on the issue of the ef...A STUDY ON THE EFFECTS OF PARASITIC PACKAGING ON DIODE DIGITAL PHASE SHIFTERS A Thesis bv JERRY SWIE THANG BONG Submitted to the Graduate College of Texas ARM University in partial fulfillment of the requirement for the degree oi MASTER...

  20. Characterization of the self magnetic pinch diode at high voltages for flash radiography.

    SciTech Connect (OSTI)

    Cordova, Steve Ray; Portillo, Salvador; Oliver, Bryan Velten; Threadgold, James R. (Atomic Weapons Establishment Aldermaston, Reading Berkshire, U.K.); Crotch, Ian (Atomic Weapons Establishment Aldermaston, Reading Berkshire, U.K.); Ziska, Derek Raymond

    2008-10-01T23:59:59.000Z

    The Sandia Laboratories Advanced Radiographic Technologies Department, in collaboration with the United Kingdom Atomic Weapons Establishment, has been conducting research into the development of the Self-Magnetic-Pinched diode as an x-ray source suitable for flash radiographic experiments. We have demonstrated that this source is capable of meeting and exceeding the initial requirements of 250 rads (measured at one meter) with a 2.75 mm source spot-size. Recent experiments conducted on the RITS-6 accelerator have demonstrated the ability of this diode to meet intermediate requirements with a sub 3 mm source spot size and a dose in excess of 400 rads at one meter.