Sample records for diode oled lighting

  1. Electroluminescence property of organic light emitting diode (OLED)

    SciTech Connect (OSTI)

    Özdemir, Orhan; Kavak, Pelin; Saatci, A. Evrim; Gökdemir, F. P?nar; Menda, U. Deneb; Can, Nursel; Kutlu, Kubilay [Y?ld?z Technical University, Department of Physics, Esenler, Istanbul (Turkey); Tekin, Emine; Pravadal?, Selin [National Metrology Inst?tute of Turkey (TUB?TAK-UME), Kocaeli (Turkey)

    2013-12-16T23:59:59.000Z

    Transport properties of electrons and holes were investigated not only in a anthracene-containing poly(p-phenylene-ethynylene)- alt - poly(p-phenylene-vinylene) (PPE-PPV) polymer (AnE-PVstat) light emitting diodes (OLED) but also in an ITO/Ag/polymer/Ag electron and ITO/PEDOT:PSS/polymer/Au hole only devices. Mobility of injected carriers followed the Poole-Frenkel type conduction mechanism and distinguished in the frequency range due to the difference of transit times in admittance measurement. Beginning of light output took place at the turn-on voltage (or flat band voltage), 1.8 V, which was the difference of energy band gap of polymer and two barrier offsets between metals and polymer.

  2. Soft lithography microlens fabrication and array for enhanced light extraction from organic light emitting diodes (OLEDs)

    SciTech Connect (OSTI)

    Leung, Wai Y.; Park, Joong-Mok; Gan, Zhengqing; Constant, Kristen P.; Shinar, Joseph; Shinar, Ruth; ho, Kai-Ming

    2014-06-03T23:59:59.000Z

    Provided are microlens arrays for use on the substrate of OLEDs to extract more light that is trapped in waveguided modes inside the devices and methods of manufacturing same. Light extraction with microlens arrays is not limited to the light emitting area, but is also efficient in extracting light from the whole microlens patterned area where waveguiding occurs. Large microlens array, compared to the size of the light emitting area, extract more light and result in over 100% enhancement. Such a microlens array is not limited to (O)LEDs of specific emission, configuration, pixel size, or pixel shape. It is suitable for all colors, including white, for microcavity OLEDs, and OLEDs fabricated directly on the (modified) microlens array.

  3. Organic light emitting diodes (OLEDS) and OLED-based structurally integrated optical sensors

    SciTech Connect (OSTI)

    Cai, Yuankun

    2010-05-16T23:59:59.000Z

    General introduction to OLED basics and OLED-based structurally integrated sensors was provided in chapter 1 and chapter 2. As discussed in chapter 3, OLEDs were developed or improved using novel engineering methods for better charge injection (increased by over 1 order of magnitude) and efficiency. As the excitation sources, these OLEDs have preferred characteristics for sensor applications, including narrowed emission, emission at desired wavelength, and enhanced output for reduced EL background, higher absorption and improved device lifetime. In addition to OLEDs with desired performance, sensor integration requires oxidase immobilization with the sensor film for O{sub 2}-based biological and chemical sensing. Nanoparticles such as ZnO have large surface area and high isoelectric point ({approx}9.5), which favors enzyme immobilization via physical adsorption as well as Coulombic bonding. In chapter 4, it was demonstrated that ZnO could be used for this purpose, although future work is needed to further bond the ZnO to the sensor film. In chapter 5, single unit sensor was extended to multianalyte parallel sensing based on an OLED platform, which is compact and integrated with silicon photodiodes and electronics. Lactate and glucose were simultaneously monitored with a low limit of detection 0.02 mM, fast response time ({approx} 1 minute) and dynamic range from 0-8.6 ppm of dissolved oxygen. As discovered in previous work, the dynamic range covers 0-100% gas phase O{sub 2} or 0-40 ppm dissolved oxygen at room temperature. PL decay curve, which is used to extract the decay time, is usually not a simple exponential at high O{sub 2} concentration, which indicates that O{sub 2} is not equally accessible for different luminescent sites. This creates a challenge for data analysis, which however was successfully processed by stretched exponential as shown in chapter 6. This also provides an insight about the distribution of O{sub 2}:dye collisional quenching rate due to microheterogeneity. Effect of TiO{sub 2} doping was also discussed. Stretched exponential analysis also generates calibration curves with higher sensitivity, which is preferred from the operational point of view. The work of enhanced integration was shown in chapter 7 with a polymer photodetector, which enables the preferred operation mode, decay time measurement, due to fast reponse (<20 {mu}s). Device thickness was enlarged for maximum absorption of the PL, which was realized by slow spincoating rate and shorter spincoating time. Film prepared this way shows more crystalline order by Raman spectra, probably due to slow evaporation. This also ensures charge transport is not affected even with a thick film as indicated in the response time. Combination of OLEDs and polymer photodetectors present opportunities for solution processed all-organic sensors, which enables cheap processing at large scale. Future development can focus on monolithically integration of OLEDs and organic photodetectors (OPD) on the same substrate at a small scale, which could be enabled by inkjet printing. As OLED and OPD technologies continue to advance, small-sized, flexible and all-organic structurally integrated sensor platforms will become true in the near future.

  4. Organic Light-Emitting Diodes (OLEDs) and Optically-Detected Magnetic Resonance (ODMR) studies on organic materials

    SciTech Connect (OSTI)

    Cai, Min

    2011-11-30T23:59:59.000Z

    Organic semiconductors have evolved rapidly over the last decades and currently are considered as the next-generation technology for many applications, such as organic light-emitting diodes (OLEDs) in flat-panel displays (FPDs) and solid state lighting (SSL), and organic solar cells (OSCs) in clean renewable energy. This dissertation focuses mainly on OLEDs. Although the commercialization of the OLED technology in FPDs is growing and appears to be just around the corner for SSL, there are still several key issues that need to be addressed: (1) the cost of OLEDs is very high, largely due to the costly current manufacturing process; (2) the efficiency of OLEDs needs to be improved. This is vital to the success of OLEDs in the FPD and SSL industries; (3) the lifetime of OLEDs, especially blue OLEDs, is the biggest technical challenge. All these issues raise the demand for new organic materials, new device structures, and continued lower-cost fabrication methods. In an attempt to address these issues, we used solution-processing methods to fabricate highly efficient small molecule OLEDs (SMOLEDs); this approach is costeffective in comparison to the more common thermal vacuum evaporation. We also successfully made efficient indium tin oxide (ITO)-free SMOLEDs to further improve the efficiency of the OLEDs. We employed the spin-dependent optically-detected magnetic resonance (ODMR) technique to study the luminescence quenching processes in OLEDs and organic materials in order to understand the intrinsic degradation mechanisms. We also fabricated polymer LEDs (PLEDs) based on a new electron-accepting blue-emitting polymer and studied the effect of molecular weight on the efficiency of PLEDs. All these studies helped us to better understand the underlying relationship between the organic semiconductor materials and the OLEDs’ performance, and will subsequently assist in further enhancing the efficiency of OLEDs. With strongly improved device performance (in addition to other OLEDs' attributes such as mechanical flexibility and potential low cost), the OLED technology is promising to successfully compete with current technologies, such as LCDs and inorganic LEDs.

  5. Fabrication and Characterization of New Hybrid Organic Light Emitting Diode (OLED): Europium-picrate-triethylene oxide Complex

    SciTech Connect (OSTI)

    Sarjidan, M. A. Mohd; Abu Zakaria, N. Z. A.; Abd. Majid, W. H. [Solid State Research Laboratory, Department of Physics, University of Malaya, 50603, Kuala Lumpur (Malaysia); Kusrini, Eny; Saleh, M. I. [School of Chemical Sciences, Universiti Sains Malaysia, 11800 Penang (Malaysia)

    2009-07-07T23:59:59.000Z

    Thin-film light emitting devices based on organic materials have attracted vast interest in applications such as light emitting diode (LED) and flat-panel display. The organic material can be attached with inorganic material to enhance the performance of the light emitting device. A hybrid OLED based on a new complex of europium picrate (Eu-pic) with triethylene oxide (EO3) ligand is fabricated. The OLED is fabricated by using spin coating technique with acetone as the solvent and aluminum as the top electrode. The optical, photoluminescence (PL) and electrical properties of the sample are carried out by UV-Vis spectroscopy (Jasco V-750), luminescence spectroscopy (Perkin Elmer LS-500) and source measure unit (SMU)(Keithly), respectively.

  6. Permanent polarization and charge distribution in organic light-emitting diodes (OLEDs): Insights from near-infrared charge-modulation spectroscopy of an operating OLED

    SciTech Connect (OSTI)

    Marchetti, Alfred P.; Haskins, Terri L.; Young, Ralph H.; Rothberg, Lewis J. [Department of Chemistry, University of Rochester, Rochester, New York 14627 (United States)

    2014-03-21T23:59:59.000Z

    Vapor-deposited Alq{sub 3} layers typically possess a strong permanent electrical polarization, whereas NPB layers do not. (Alq{sub 3} is tris(8-quinolinolato)aluminum(III); NPB is 4,4?-bis[N-(1-naphthyl)-N-phenylamino]biphenyl.) The cause is a net orientation of the Alq{sub 3} molecules with their large dipole moments. Here we report on consequences for an organic light-emitting diode (OLED) with an NPB hole-transport layer and Alq{sub 3} electron-transport layer. The discontinuous polarization at the NPB|Alq{sub 3} interface has the same effect as a sheet of immobile negative charge there. It is more than compensated by a large concentration of injected holes (NPB{sup +}) when the OLED is running. We discuss the implications and consequences for the quantum efficiency and the drive voltage of this OLED and others. We also speculate on possible consequences of permanent polarization in organic photovoltaic devices. The concentration of NPB{sup +} was measured by charge-modulation spectroscopy (CMS) in the near infrared, where the NPB{sup +} has a strong absorption band, supplemented by differential-capacitance and current-voltage measurements. Unlike CMS in the visible, this method avoids complications from modulation of the electroluminescence and electroabsorption.

  7. Modifying the organic/electrode interface in Organic Solar Cells (OSCs) and improving the efficiency of solution-processed phosphorescent Organic Light-Emitting Diodes (OLEDs)

    SciTech Connect (OSTI)

    Xiao, Teng

    2012-04-27T23:59:59.000Z

    Organic semiconductors devices, such as, organic solar cells (OSCs), organic light-emitting diodes (OLEDs) and organic field-effect transistors (OFETs) have drawn increasing interest in recent decades. As organic materials are flexible, light weight, and potentially low-cost, organic semiconductor devices are considered to be an alternative to their inorganic counterparts. This dissertation will focus mainly on OSCs and OLEDs. As a clean and renewable energy source, the development of OSCs is very promising. Cells with 9.2% power conversion efficiency (PCE) were reported this year, compared to < 8% two years ago. OSCs belong to the so-called third generation solar cells and are still under development. While OLEDs are a more mature and better studied field, with commercial products already launched in the market, there are still several key issues: (1) the cost of OSCs/OLEDs is still high, largely due to the costly manufacturing processes; (2) the efficiency of OSCs/OLEDs needs to be improved; (3) the lifetime of OSCs/OLEDs is not sufficient compared to their inorganic counterparts; (4) the physics models of the behavior of the devices are not satisfactory. All these limitations invoke the demand for new organic materials, improved device architectures, low-cost fabrication methods, and better understanding of device physics. For OSCs, we attempted to improve the PCE by modifying the interlayer between active layer/metal. We found that ethylene glycol (EG) treated poly(3,4-ethylenedioxythiophene): polystyrenesulfonate (PEDOT: PSS) improves hole collection at the metal/polymer interface, furthermore it also affects the growth of the poly(3- hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM) blends, making the phase segregation more favorable for charge collection. We then studied organic/inorganic tandem cells. We also investigated the effect of a thin LiF layer on the hole-collection of copper phthalocyanine (CuPc)/C70-based small molecular OSCs. A thin LiF layer serves typically as the electron injection layer in OLEDs and electron collection interlayer in the OSCs. However, several reports showed that it can also assist in holeinjection in OLEDs. Here we first demonstrate that it assists hole-collection in OSCs, which is more obvious after air-plasma treatment, and explore this intriguing dual role. For OLEDs, we focus on solution processing methods to fabricate highly efficient phosphorescent OLEDs. First, we investigated OLEDs with a polymer host matrix, and enhanced charge injection by adding hole- and electron-transport materials into the system. We also applied a hole-blocking and electron-transport material to prevent luminescence quenching by the cathode. Finally, we substituted the polymer host by a small molecule, to achieve more efficient solution processed small molecular OLEDs (SMOLEDs); this approach is cost-effective in comparison to the more common vacuum thermal evaporation. All these studies help us to better understand the underlying relationship between the organic semiconductor materials and the OSCs and OLEDs’ performance and will subsequently assist in further enhancing the efficiencies of OSCs and OLEDs. With better efficiency and longer lifetime, the OSCs and OLEDs will be competitive with their inorganic counterparts.

  8. Enhanced performance of organic light-emitting diodes (OLEDs) and OLED-based photoluminescent sensing platforms by novel microstructures and device architectures

    SciTech Connect (OSTI)

    Liu, Rui [Ames Laboratory

    2012-08-01T23:59:59.000Z

    After a general introduction to OLEDs and OLED-based PL sensors, the transient emission mechanism of guest-host OLEDs is described both experimentally and theoretically. A monolithic and easy-to-apply process is demonstrated for fabricating multicolor microcavity OLEDs (that improve the sensor platform). The outcoupling issues of OLEDs at the substrate/air interface are addressed by using a microstructured polymer film resulting from a PS and polyethylene glycol (PEG) mixture. Based on the understanding of OLEDs and their improvement, research was done in order to realize integrated all organic-based O{sub 2} and pH sensors with improved signal intensity and sensitivity. The sensor design modification and optimization are summarized

  9. Enhancement of Barrier Properties Using Ultrathin Hybrid Passivation Layer for Organic Light Emitting Diodes

    E-Print Network [OSTI]

    Hwang, Sung Woo

    acrylate layer and MS-31 (MgO : SiO2 ¼ 3 : 1 wt %) layer was adopted in organic light emitting diode (OLED the penetrations of oxygen and moisture. [DOI: 10.1143/JJAP.45.5970] KEYWORDS: organic light emitting diode (OLED. Introduction As a next generation display, the organic light emitting diode (OLED) has to great performances

  10. High-Performance Organic Light-Emitting Diodes Using ITO

    E-Print Network [OSTI]

    Ho, Seng-Tiong

    High-Performance Organic Light-Emitting Diodes Using ITO Anodes Grown on Plastic by Room,* Mark E. Madsen, Antonio DiVenere, and Seng-Tiong Ho Organic light-emitting diodes (OLEDs) fabricated

  11. Numerical analysis of nanostructures for enhanced light extraction from OLEDs

    E-Print Network [OSTI]

    Zschiedrich, L; Burger, S; Schmidt, F; 10.1117/12.2001132

    2013-01-01T23:59:59.000Z

    Nanostructures, like periodic arrays of scatters or low-index gratings, are used to improve the light outcoupling from organic light-emitting diodes (OLED). In order to optimize geometrical and material properties of such structures, simulations of the outcoupling process are very helpful. The finite element method is best suited for an accurate discretization of the geometry and the singular-like field profile within the structured layer and the emitting layer. However, a finite element simulation of the overall OLED stack is often beyond available computer resources. The main focus of this paper is the simulation of a single dipole source embedded into a twofold infinitely periodic OLED structure. To overcome the numerical burden we apply the Floquet transform, so that the computational domain reduces to the unit cell. The relevant outcoupling data are then gained by inverse Flouqet transforming. This step requires a careful numerical treatment as reported in this paper.

  12. Light extraction from organic light-emitting diodes for lighting applications by sand-blasting

    E-Print Network [OSTI]

    Light extraction from organic light-emitting diodes for lighting applications by sand@ust.hk Abstract: Light extraction from organic light-emitting diodes (OLEDs) by scattering the light is one of the effective methods for large-area lighting applications. In this paper, we present a very simple and cost

  13. Chameleon: Color Transformation on OLED Displays Mian Dong, and Lin Zhong

    E-Print Network [OSTI]

    Zhong, Lin

    system energy consumers in mobile systems. Emerging organic light-emitting diode (OLED)-based displays

  14. White organic light-emitting diodes: Status and perspective

    E-Print Network [OSTI]

    Reineke, Sebastian

    White organic light-emitting diodes (OLEDs) are ultrathin, large-area light sources made from organic semiconductor materials. Over the past decades, much research has been spent on finding suitable materials to realize ...

  15. Enhanced coupling of light from organic light emitting diodes using nanoporous films

    E-Print Network [OSTI]

    Enhanced coupling of light from organic light emitting diodes using nanoporous films H. J. Peng, Y the light extraction efficiency for organic light emitting diode OLED . Nanoporous alumina film was used by Bragg scattering. The corrugated light- emitting diode had two-times the efficiency as compared

  16. High Efficiency, Illumination Quality OLEDs for Lighting

    SciTech Connect (OSTI)

    Joseph Shiang; James Cella; Kelly Chichak; Anil Duggal; Kevin Janora; Chris Heller; Gautam Parthasarathy; Jeffery Youmans; Joseph Shiang

    2008-03-31T23:59:59.000Z

    The goal of the program was to demonstrate a 45 lumen per watt white light device based upon the use of multiple emission colors through the use of solution processing. This performance level is a dramatic extension of the team's previous 15 LPW large area illumination device. The fundamental material system was based upon commercial polymer materials. The team was largely able to achieve these goals, and was able to deliver to DOE a 90 lumen illumination source that had an average performance of 34 LPW a 1000 cd/m{sup 2} with peak performances near 40LPW. The average color temperature is 3200K and the calculated CRI 85. The device operated at a brightness of approximately 1000cd/m{sup 2}. The use of multiple emission colors particularly red and blue, provided additional degrees of design flexibility in achieving white light, but also required the use of a multilayered structure to separate the different recombination zones and prevent interconversion of blue emission to red emission. The use of commercial materials had the advantage that improvements by the chemical manufacturers in charge transport efficiency, operating life and material purity could be rapidly incorporated without the expenditure of additional effort. The program was designed to take maximum advantage of the known characteristics of these material and proceeded in seven steps. (1) Identify the most promising materials, (2) assemble them into multi-layer structures to control excitation and transport within the OLED, (3) identify materials development needs that would optimize performance within multilayer structures, (4) build a prototype that demonstrates the potential entitlement of the novel multilayer OLED architecture (5) integrate all of the developments to find the single best materials set to implement the novel multilayer architecture, (6) further optimize the best materials set, (7) make a large area high illumination quality white OLED. A photo of the final deliverable is shown. In 2003, a large area, OLED based illumination source was demonstrated that could provide light with a quality, quantity, and efficiency on par with what can be achieved with traditional light sources. The demonstration source was made by tiling together 16 separate 6-inch x 6-inch blue-emitting OLEDs. The efficiency, total lumen output, and lifetime of the OLED based illumination source were the same as what would be achieved with an 80 watt incandescent bulb. The devices had an average efficacy of 15 LPW and used solution-processed OLEDs. The individual 6-inch x 6-inch devices incorporated three technology strategies developed specifically for OLED lighting -- downconversion for white light generation, scattering for outcoupling efficiency enhancement, and a scalable monolithic series architecture to enable large area devices. The downconversion approach consists of optically coupling a blue-emitting OLED to a set of luminescent layers. The layers are chosen to absorb the blue OLED emission and then luminescence with high efficiency at longer wavelengths. The composition and number of layers are chosen so that the unabsorbed blue emission and the longer wavelength re-emission combine to make white light. A downconversion approach has the advantage of allowing a wide variety of colors to be made from a limited set of blue emitters. In addition, one does not have to carefully tune the emission wavelength of the individual electro-luminescent species within the OLED device in order to achieve white light. The downconversion architecture used to develop the 15LPW large area light source consisted of a polymer-based blue-emitting OLED and three downconversion layers. Two of the layers utilized perylene based dyes from BASF AG of Germany with high quantum efficiency (>98%) and one of the layers consisted of inorganic phosphor particles (Y(Gd)AG:Ce) with a quantum efficiency of {approx}85%. By independently varying the optical density of the downconversion layers, the overall emission spectrum could be adjusted to maximize performance for lighting (e.g. blackbody temp

  17. algainp light-emitting diodes: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    materials for different organic layers, which compose the standard organic light emitting diode (OLED) architecture.; Chapter one introduces (more) Borek, Carsten 2008-01-01...

  18. Fabrication of the ZnO thin films using wet-chemical etching processes on application for organic light emitting diode (OLED) devices

    E-Print Network [OSTI]

    Boo, Jin-Hyo

    - sively used in solar cells, touch panels, heat mirrors, organic electro- luminescence devices (OLED), for example, has been commercially used in OLEDs. However, because of the cost and the scarcity of indium reactants and produce new species. Wet-chemical etching has great advantages such as low cost

  19. Quantum Dot Light Emitting Diode

    SciTech Connect (OSTI)

    Kahen, Keith

    2008-07-31T23:59:59.000Z

    The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m{sup 2}, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.

  20. Quantum Dot Light Emitting Diode

    SciTech Connect (OSTI)

    Keith Kahen

    2008-07-31T23:59:59.000Z

    The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m2, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.

  1. Interface electronic structures of organic light-emitting diodes with WO3 interlayer: A study by photoelectron spectroscopy

    E-Print Network [OSTI]

    Kim, Sehun

    Interface electronic structures of organic light-emitting diodes with WO3 interlayer: A study injec- tion and transport layers in an organic light-emitting diode (OLED) structure has been studied B.V. All rights reserved. 1. Introduction OLEDs (organic light-emitting diodes) are display de

  2. Fabrication of the ZnO thin films using wet-chemical etching processes on application for organic light emitting diode (OLED) devices

    E-Print Network [OSTI]

    Hong, Byungyou

    - sively used in solar cells, touch panels, heat mirrors, organic electro- luminescence devices (OLED- chemical etching behaviors of ZnO films were also investigated using various chemicals. In order

  3. 2014 OLED Stakeholder Meeting Report

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... 16 1 1. Introduction The 2014 Organic Light Emitting Diode (OLED) Stakeholder Meeting was convened by the U.S. Department of Energy (DOE)...

  4. Intramolecular excimer emission as a blue light source in fluorescent organic light emitting diodes: a promising molecular design

    E-Print Network [OSTI]

    Boyer, Edmond

    Intramolecular excimer emission as a blue light source in fluorescent organic light emitting diodes Light Emitting Diode (OLED), intermolecular p­p interactions should be usually suppressed to avoid any Emitting Diodes (SMOLEDs) is almost absent from the literature. In this work, three aryl-substituted Di

  5. GreenVis: Energy-Saving Color Schemes for Sequential Data Visualization on OLED Displays

    E-Print Network [OSTI]

    North Virginia Tech Blacksburg, VA north@cs.vt.edu ABSTRACT The organic light emitting diode (OLED, Color Scheme, Visualization 1. INTRODUCTION The organic light-emitting diode (OLED) display is an emerg

  6. Power-Saving Color Transformation of Mobile Graphical User Interfaces on OLED-based Displays

    E-Print Network [OSTI]

    Zhong, Lin

    , Houston, TX 77025 {dongmian, ykc1,lzhong}@rice.edu ABSTRACT Emerging organic light-emitting diode (OLED of the display content or GUI design [1]. In contrast, emerging organic light-emitting diode (OLED

  7. Poly(p-phenylene vinylene)/tris(8-hydroxy) quinoline aluminum heterostructure light emitting diode

    E-Print Network [OSTI]

    Poly(p-phenylene vinylene)/tris(8-hydroxy) quinoline aluminum heterostructure light emitting diode are presented from polymer/molecular organic heterostructure light emitting diodes composed of a layer,2 organic light emitting diodes OLEDs utilizing fluorescent molecules have attracted considerable interest

  8. Efficient blue organic light-emitting diodes employing thermally activated delayed

    E-Print Network [OSTI]

    Cai, Long

    Efficient blue organic light-emitting diodes employing thermally activated delayed fluorescence,2 * Organic light-emitting diodes (OLEDs) employing thermally activated delayed fluorescence (TADF) have energy is high enough and the 3 LE state is higher than the 3 CT state. O rganic light-emitting diodes

  9. Enhancing the emission directionality of organic light-emitting diodes by using photonic microstructures

    SciTech Connect (OSTI)

    Zhang, Shuyu; Turnbull, Graham A., E-mail: gat@st-andrews.ac.uk, E-mail: idws@st-andrews.ac.uk; Samuel, Ifor D. W., E-mail: gat@st-andrews.ac.uk, E-mail: idws@st-andrews.ac.uk [Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, Fife KY16 9SS (United Kingdom)] [Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, Fife KY16 9SS (United Kingdom)

    2013-11-18T23:59:59.000Z

    We report microstructured organic light-emitting diodes (OLEDs) with directional emission based on efficient solution-processable europium-OLEDs patterned by solvent assisted microcontact molding. The angle dependence of the light emission is characterized for OLEDs with square-array photonic crystals with periods between 275?nm and 335?nm. The microstructured devices have emission patterns strongly modified from the Lambertian emission of planar OLEDs and can approximately double the emitted power in a desired angle range in both s- and p-polarizations. The modified emission is attributed to light diffracted out of the waveguide modes of the OLEDs.

  10. Chameleon: A Color-Adaptive Web Browser for Mobile OLED Displays

    E-Print Network [OSTI]

    Zhong, Lin

    }@rice.edu ABSTRACT Displays based on organic light-emitting diode (OLED) technology are appearing on many mobile

  11. Thin Film Packaging Solutions for High Efficiency OLED Lighting Products

    SciTech Connect (OSTI)

    None

    2008-06-30T23:59:59.000Z

    The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000 hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology was characterized as having less than 10% change in transmission during the 15,000 hour test period; (3) demonstrated thin film encapsulation of a phosphorescent OLED device with 1,500 hours of lifetime at 60 C and 80% RH; (4) demonstrated that a thin film laminate encapsulation, in addition to the direct thin film deposition process, of a polymer OLED device was another feasible packaging strategy for OLED lighting. The thin film laminate strategy was developed to mitigate defects, demonstrate roll-to-roll process capability for high volume throughput (reduce costs) and to support a potential commercial pathway that is less dependent upon integrated manufacturing since the laminate could be sold as a rolled good; (5) demonstrated that low cost 'blue' glass substrates could be coated with a siloxane barrier layer for planarization and ion-protection and used in the fabrication of a polymer OLED lighting device. This study further demonstrated that the substrate cost has potential for huge cost reductions from the white borosilicate glass substrate currently used by the OLED lighting industry; (6) delivered four-square feet of white phosphorescent OLED technology, including novel high efficiency devices with 82 CRI, greater than 50 lm/W efficiency, and more than 1,000 hours lifetime in a product concept model shelf; (7) presented and or published more than twenty internal studies (for private use), three external presentations (OLED workshop-for public use), and five technology-related external presentations (industry conferences-for public use); and (8) issued five patent applications, which are in various maturity stages at time of publication. Delivery of thin film encapsulated white phosphorescent OLED lighting technology remains a challenging technical achievement, and it seems that commercial availability of thin, bright, white OLED light that meets market requirements will continue to require research and development effort. However, there will be glass encapsulated white OLED lighting products commercialized in niche markets during the 2008 calendar year. This commercializ

  12. Recovery Act: Low Cost Integrated Substrate for OLED Lighting Development

    SciTech Connect (OSTI)

    Scott Benton; Abhinav Bhandari

    2012-09-30T23:59:59.000Z

    PPG pursued the development of an integrated substrate, including the anode, external, and internal extraction layers. The objective of PPGâ??s program was to achieve cost reductions by displacing the existing expensive borosilicate or double-side polished float glass substrates and developing alternative electrodes and scalable light extraction layer technologies through focused and short-term applied research. One of the key highlights of the project was proving the feasibility of using PPGâ??s high transmission Solarphire® float glass as a substrate to consistently achieve organic lightemitting diode (OLED) devices with good performance and high yields. Under this program, four low-cost alternatives to the Indium Tin Oxide (ITO) anode were investigated using pilot-scale magnetron sputtered vacuum deposition (MSVD) and chemical vapor deposition (CVD) technologies. The anodes were evaluated by fabricating small and large phosphorescent organic lightemitting diode (PHOLED) devices at Universal Display Corporation (UDC). The device performance and life-times comparable to commercially available ITO anodes were demonstrated. A cost-benefit analysis was performed to down-select two anodes for further low-cost process development. Additionally, PPG developed and evaluated a number of scalable and compatible internal and external extraction layer concepts such as scattering layers on the outside of the glass substrate or between the transparent anode and the glass interface. In one external extraction layer (EEL) approach, sol-gel sprayed pyrolytic coatings were deposited using lab scale equipment by hand or automated spraying of sol-gel solutions on hot glass, followed by optimizing of scattering with minimal absorption. In another EEL approach, PPG tested large-area glass texturing by scratching a glass surface with an abrasive roller and acid etching. Efficacy enhancements of 1.27x were demonstrated using white PHOLED devices for 2.0mm substrates which are at par with the standard diffuser sheets used by OLED manufacturers. For an internal extraction layer (IEL), PPG tested two concepts combining nanoparticles either in a solgel coating inserted between the anode and OLED or anode and glass interface, or incorporated into the internal surface of the glass. Efficacy enhancements of 1.31x were demonstrated using white PHOLED devices for the IEL by itself and factors of 1.73x were attained for an IEL in combination of thick acrylic block as an EEL. Recent offline measurements indicate that, with further optimization, factors over 2.0x could be achieved through an IEL alone.

  13. High Quantum Efficiency OLED Lighting Systems

    SciTech Connect (OSTI)

    Shiang, Joseph

    2011-09-30T23:59:59.000Z

    The overall goal of the program was to apply improvements in light outcoupling technology to a practical large area plastic luminaire, and thus enable the product vision of an extremely thin form factor high efficiency large area light source. The target substrate was plastic and the baseline device was operating at 35 LPW at the start of the program. The target LPW of the program was a >2x improvement in the LPW efficacy and the overall amount of light to be delivered was relatively high 900 lumens. Despite the extremely difficult challenges associated with scaling up a wet solution process on plastic substrates, the program was able to make substantial progress. A small molecule wet solution process was successfully implemented on plastic substrates with almost no loss in efficiency in transitioning from the laboratory scale glass to large area plastic substrates. By transitioning to a small molecule based process, the LPW entitlement increased from 35 LPW to 60 LPW. A further 10% improvement in outcoupling efficiency was demonstrated via the use of a highly reflecting cathode, which reduced absorptive loss in the OLED device. The calculated potential improvement in some cases is even larger, ~30%, and thus there is considerable room for optimism in improving the net light coupling efficacy, provided absorptive loss mechanisms are eliminated. Further improvements are possible if scattering schemes such as the silver nanowire based hard coat structure are fully developed. The wet coating processes were successfully scaled to large area plastic substrate and resulted in the construction of a 900 lumens luminaire device.

  14. Text-Alternative Version: Challenges in OLED Research and Development

    Broader source: Energy.gov [DOE]

    Narrator: Organic light-emitting diodes, OLEDs, are made using organic carbon-based materials. Unlike LEDs, which are small point light sources, OLEDs are made in sheets that create diffuse area...

  15. Power Modeling of Graphical User Interfaces on OLED Mian Dong Yung-Seok Kevin Choi Lin Zhong

    E-Print Network [OSTI]

    Zhong, Lin

    1,lzhong}@rice.edu ABSTRACT Emerging organic light-emitting diode (OLED)-based displays obviate light-emitting diode (OLED)-based displays [5] is highly dependent on the display content because

  16. White organic light-emitting diodes: Status and perspective

    E-Print Network [OSTI]

    Reineke, Sebastian; Lüssem, Björn; Leo, Karl

    2013-01-01T23:59:59.000Z

    White organic light-emitting diodes (OLEDs) are ultra-thin, large-area light sources made from organic semiconductor materials. Over the last decades, much research has been spent on finding the suitable materials to realize highly efficient monochrome and white OLEDs. With their high efficiency, color-tunability, and color-quality, white OLEDs are emerging to become one of the next generation light sources. In this review, we discuss the physics of a variety of device concepts that are introduced to realize white OLEDs based on both polymer and small molecule organic materi als. Owing to the fact that about 80 % of the internally generated photons are trapped within the thin-film layer structure, we put a second focus on reviewing promising concepts for improved light outcoupling.

  17. Components, production processes, and recommendations for future research in organic light emitting diodes

    E-Print Network [OSTI]

    Hunting, Lindsay (Lindsay E.)

    2009-01-01T23:59:59.000Z

    Organic Light Emitting Diodes (OLEDs) are small, optoelectronic devices that can be used in the production of energy-efficient, high definition displays in cell phones, computers, and televisions. These devices have great ...

  18. Storage of charge carriers on emitter molecules in organic light-emitting diodes

    E-Print Network [OSTI]

    Reineke, Sebastian

    Organic light-emitting diodes (OLEDs) using the red phosphorescent emitter iridium(III)bis(2-methyldibenzo[f,h]quinoxaline) (acetylacetonate) [Ir(MDQ)[subscript 2](acac)] are studied by time-resolved electroluminescence ...

  19. Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting

    SciTech Connect (OSTI)

    Martin Bluhm; James Coffey; Roman Korotkov; Craig Polsz; Alexandre Salemi; Robert Smith; Ryan Smith; Jeff Stricker; Chen Xu; Jasmine Shirazi; George Papakonstantopulous; Steve Carson; Claudia Goldman; Soren Hartmann; Frank Jessen; Bianca Krogmann; Christoph Rickers; Manfred Ruske; Holger Schwab; Dietrich Bertram

    2011-01-02T23:59:59.000Z

    Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exacerbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectronic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availability of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a clear focus on economics and the work plan focused both on doped ZnO process and OLED device structure that would be consistent with the new TCO. The team successfully made 6 inch OLEDs with a serial construction. More process development is required to optimize commercial OLED structures. Feasibility was demonstrated on two different light extraction technologies: 1/4 lambda refractive index matching and high-low-high band pass filter. Process development was also completed on the key precursors for the TCO, which are ready for pilot-plant scale-up. Subsequently, Arkema has developed a cost of ownership model that is consistent with DOE SSL R&D Manufacturing targets as outlined in the DOE SSL R&D Manufacturing 2010 report. The overall outcome of this project was the demonstration that doped zinc oxide can be used for OLED devices without a drop-off in performance while gaining the economic and sustainable benefits of a more readily available TCO. The broad impact of this project, is the facilitation of OLED lighting market penetration into general illumination, resulting in significant energy savings, decreased greenhouse emissions, with no environmental impact issues such as mercury found in Fluorescent technology. The primary objective of this project was to develop a commercially viable process for 'Substrates' (Substrate/ undercoat/ TCO topcoat) to be used in production of OLED devices (lamps/luminaries/modules). This project focused on using Arkema's recently developed doped ZnO technology for the Fenestration industry and applying the technology to the OLED lighting industry. The secondary objective was the use of undercoat technology to improve light extraction from the OLED device. In optical fields and window applications, technology has been developed to mitigate reflection losses by selecting appropriate thicknesses and refractive indices of coatings applied either below or above the functional layer of interest. This technology has been proven and implemented in the fenestration industry for more than 15 years. Successful completion of

  20. High-density organic light emitting diodes by nanoimprint technology Krutarth Trivedi, Caleb Nelson, Li Tao, Mathew Goeckner, Walter Hua)

    E-Print Network [OSTI]

    Hu, Wenchuang "Walter"

    High-density organic light emitting diodes by nanoimprint technology Krutarth Trivedi, Caleb Nelson sources. Despite the considerable development of inorganic semiconductor based light emitting diodes of miniaturization to nanoscale. Organic light emitting diode (OLED) technology is immune to quantum confinement

  1. 4.2: Design of an Improved Pixel for a Polysilicon Active Matrix Organic Light Emitting Diode Display

    E-Print Network [OSTI]

    4.2: Design of an Improved Pixel for a Polysilicon Active Matrix Organic Light Emitting Diode active matrix organic light emitting diode (AMOLED) pixel with high pixel to pixel luminance uniformity such as organic light emitting diodes (OLEDs) are presently of great interest due to their potential application

  2. Efficiency improvement of phosphorescent organic light-emitting diodes using semitransparent Ag as anode

    E-Print Network [OSTI]

    Efficiency improvement of phosphorescent organic light-emitting diodes using semitransparent Ag The emission efficiency in an organic light-emitting diode OLED based on fac tris phenyl pyridine iridium Ir current efficiency of 81 cd/A and a power efficiency of 79 lm/W, compared with 46 cd/A and 39 lm

  3. Efficient Light Extraction from Organic Light-Emitting Diodes Using Plasmonic Scattering Layers

    SciTech Connect (OSTI)

    Rothberg, Lewis

    2012-11-30T23:59:59.000Z

    Our project addressed the DOE MYPP 2020 goal to improve light extraction from organic light-emitting diodes (OLEDs) to 75% (Core task 6.3). As noted in the 2010 MYPP, “the greatest opportunity for improvement is in the extraction of light from [OLED] panels”. There are many approaches to avoiding waveguiding limitations intrinsic to the planar OLED structure including use of textured substrates, microcavity designs and incorporating scattering layers into the device structure. We have chosen to pursue scattering layers since it addresses the largest source of loss which is waveguiding in the OLED itself. Scattering layers also have the potential to be relatively robust to color, polarization and angular distributions. We note that this can be combined with textured or microlens decorated substrates to achieve additional enhancement.

  4. Quantum Dot Light Enhancement Substrate for OLED Solid-State Lighting

    SciTech Connect (OSTI)

    James Perkins; Matthew Stevenson; Gagan Mahan; Seth Coe-Sullivan; Peter Kazlas

    2011-01-21T23:59:59.000Z

    With DOE Award No. DE-EE00000628, QD Vision developed and demonstrated a cost-competitive solution for increasing the light extraction efficiency of OLEDs with efficient and stable color rendering index (CRI) for solid state lighting (SSL). Solution processable quantum dot (QD) films were integrated into OLED ITO-glass substrates to generate tunable white emission from blue emitting OLED) devices as well as outcouple light from the ITO film. This QD light-enhancement substrate (QD-LED) technology demonstrated a 60% increase in OLED forward light out-coupling, a value which increases to 76% when considering total increase in multi-directional light output. The objective for the first year was an 80% increase in light output. This project seeks to develop and demonstrate a cost-competitive solution for realizing increased extraction efficiency organic light emitting devices (OLEDs) with efficient and stable color rendering index (CRI) for SSL. Solution processible quantum dot (QD) films will be utilized to generate tunable white emission from blue emitting phosphorescent OLED (Ph-OLED) devices.

  5. Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting

    SciTech Connect (OSTI)

    Gary Silverman; Bluhm, Martin; Coffey, James; Korotkov, Roman; Polsz, Craig; Salemi, Alexandre; Smith, Robert; Smith, Ryan; Stricker, Jeff; Xu,Chen; Shirazi, Jasmine; Papakonstantopulous, George; Carson, Steve Philips Lighting GmbH Goldman, Claudia; Hartmann, Sören; Jessen, Frank; ,; Krogmann, Bianca; Rickers, Christoph; Ruske, Manfred, Schwab, Holger; Bertram, Dietrich

    2011-01-02T23:59:59.000Z

    Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exaserbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectonic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availablility of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a clear focus on economics and the work plan focused both on doped ZnO process and OLED device structure that would be consistent with the new TCO. The team successfully made 6 inch OLEDs with a serial construction. More process development is required to optimize commercial OLED structures. Feasibility was demonstrated on two different light extraction technologies: 1/4 lambda refractive index matching and high-low-high band pass filter. Process development was also completed on the key precursors for the TCO, which are ready for pilot-plant scale-up. Subsequently, Arkema has developed a cost of ownership model that is consistent with DOE SSL R&D Manufacturing targets as outlined in the DOE SSL R&D Manufacturing 2010 report. The overall outcome of this project was the demonstration that doped zinc oxide can be used for OLED devices without a drop-off in performance while gaining the economic and sustainable benefits of a more readily available TCO. The broad impact of this project, is the facilitation of OLED lighting market penetration into general illumination, resulting in significant energy savings, decreased greenhouse emissions, with no environmental impact issues such as mercury found in Fluorescent technology.

  6. Problems and Opportunities in OLED Lighting Manufacturing

    Energy Savers [EERE]

    NY. * Our first product was introduced last year - an amber marker light for the health care market. * We have will soon complete our commercialization of a competitive...

  7. Integrated fuses for OLED lighting device

    DOE Patents [OSTI]

    Pschenitzka, Florian (San Jose, CA)

    2007-07-10T23:59:59.000Z

    An embodiment of the present invention pertains to an electroluminescent lighting device for area illumination. The lighting device is fault tolerant due, in part, to the patterning of one or both of the electrodes into strips, and each of one or more of these strips has a fuse formed on it. The fuses are integrated on the substrate. By using the integrated fuses, the number of external contacts that are used is minimized. The fuse material is deposited using one of the deposition techniques that is used to deposit the thin layers of the electroluminescent lighting device.

  8. Toward ZnO Light Emitting Diode

    E-Print Network [OSTI]

    Liu, Jianlin

    2008-01-01T23:59:59.000Z

    applications such as light emitting diodes (LEDs) and laser009 "Toward ZnO Light Emitting Diode" Jianlin Liu July 2008Title: “Toward ZnO Light Emitting Diode” Sponsor: UC Energy

  9. Vacuum-free lamination of low work function cathode for efficient solution-processed organic light-emitting diodes

    E-Print Network [OSTI]

    Meng, Hsin-Fei

    -coated organic light-emitting diode is transferred from a soft polydimethylsiloxane (PDMS) mold by lamination, or blade coating [1,2] for organic light emitting diode (OLED) as well as solar cell. The top electrodeVacuum-free lamination of low work function cathode for efficient solution-processed organic light-emitting

  10. Organic light-emitting diodes from homoleptic square planar complexes

    DOE Patents [OSTI]

    Omary, Mohammad A

    2013-11-12T23:59:59.000Z

    Homoleptic square planar complexes [M(N.LAMBDA.N).sub.2], wherein two identical N.LAMBDA.N bidentate anionic ligands are coordinated to the M(II) metal center, including bidentate square planar complexes of triazolates, possess optical and electrical properties that make them useful for a wide variety of optical and electrical devices and applications. In particular, the complexes are useful for obtaining white or monochromatic organic light-emitting diodes ("OLEDs"). Improved white organic light emitting diode ("WOLED") designs have improved efficacy and/or color stability at high brightness in single- or two-emitter white or monochrome OLEDs that utilize homoleptic square planar complexes, including bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II) ("Pt(ptp).sub.2").

  11. Apply: Solid-State Lighting Advanced Technology R&D - 2014(DE...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Through research and development of solid-state lighting (SSL),including both light-emitting diode (LED) and organic light emitting diode (OLED) technologies, the objectives of...

  12. Multi-Faceted Scientific Strategies Toward Better Solid-State Lighting of Phosphorescent OLEDs

    SciTech Connect (OSTI)

    Mohammad Omary; Bruce Gnade; Qi Wang; Oussama Elbjeirami; Chi Yang; Nigel Shepherd; Huiping Jia; Manuel Quevedo; Husam Alshareef; Minghang Li; Ming-Te Lin; Wei-Hsuan Chen; Iain Oswald; Pankaj Sinha; Ravi Arvapally; Usha Kaipa; John Determan; Sreekar Marpu; Roy McDougald; Gustavo Garza; Jason Halbert; Unnat Bhansali; Michael Perez

    2010-08-31T23:59:59.000Z

    This project has advanced solid-state lighting (SSL) by utilizing new phosphorescent systems for use in organic light-emitting diodes (OLEDs). The technical approach was two-fold: a) Targeted synthesis and screening of emitters designed to exhibit phosphorescence with maximized brightness in the solid state; and b) Construction and optimizing the performance of monochromatic and white OLEDs from the best new emitters to improve performance metrics versus the state of the art. The phosphorescent systems were screened candidates among a large variety of recentlysynthesized and newly-designed molecular and macromolecular metal-organic phosphors. The emitters and devices have been optimized to maximize light emission and color metrics, improve the long-term durability of emitters and devices, and reduce the manufacturing cost both by simplifying the process flow and by seeking less expensive device components than common ones. The project succeeded in all these goals upon comparison of the best materials and devices investigated vs. the state of the art of the technology.

  13. Low Power, Red, Green and Blue Carbon Nanotube Enabled Vertical Organic Light Emitting Transistors for Active Matrix OLED Displays

    SciTech Connect (OSTI)

    McCarthy, M. A. [University of Florida, Gainesville; Liu, B. [University of Florida, Gainesville; Donoghue, E. P. [University of Florida, Gainesville; Kravchenko, Ivan I [ORNL; Kim, D. Y. [University of Florida, Gainesville; So, Franky [University of Florida, Gainesville; Rinzler, A. G. [University of Florida, Gainesville

    2011-01-01T23:59:59.000Z

    Organic semiconductors are potential alternatives to polycrystalline silicon as the semiconductor used in the backplane of active matrix organic light emitting diode displays. Demonstrated here is a light-emitting transistor with an organic channel, operating with low power dissipation at low voltage, and high aperture ratio, in three colors: red, green and blue. The single-wall carbon nanotube network source electrode is responsible for the high level of performance demonstrated. A major benefit enabled by this architecture is the integration of the drive transistor, storage capacitor and light emitter into a single device. Performance comparable to commercialized polycrystalline-silicon TFT driven OLEDs is demonstrated.

  14. Series connected OLED structure and fabrication method

    DOE Patents [OSTI]

    Foust, Donald Franklin; Balch, Ernest Wayne; Duggal, Anil Raj; Heller, Christian Maria; Guida, Renato; Nealon, William Francis; Faircloth, Tami Janene

    2006-05-23T23:59:59.000Z

    A light emitting device comprises a plurality of organic light emitting diode (OLED) modules. The OLED modules are arranged into a series group where the individual OLED modules are electrically connected in series. The device is configured to be coupled to a power supply. A display is also provided. The display includes a plurality of OLED modules arranged to depict a shape selected from the group consisting of at least one letter, at least one number, at least one image, and a combination thereof.

  15. Surface Plasmon Enhanced Phosphorescent Organic Light Emitting Diodes

    SciTech Connect (OSTI)

    Guillermo Bazan; Alexander Mikhailovsky

    2008-08-01T23:59:59.000Z

    The objective of the proposed work was to develop the fundamental understanding and practical techniques for enhancement of Phosphorescent Organic Light Emitting Diodes (PhOLEDs) performance by utilizing radiative decay control technology. Briefly, the main technical goal is the acceleration of radiative recombination rate in organometallic triplet emitters by using the interaction with surface plasmon resonances in noble metal nanostructures. Increased photonic output will enable one to eliminate constraints imposed on PhOLED efficiency by triplet-triplet annihilation, triplet-polaron annihilation, and saturation of chromophores with long radiative decay times. Surface plasmon enhanced (SPE) PhOLEDs will operate more efficiently at high injection current densities and will be less prone to degradation mechanisms. Additionally, introduction of metal nanostructures into PhOLEDs may improve their performance due to the improvement of the charge transport through organic layers via multiple possible mechanisms ('electrical bridging' effects, doping-like phenomena, etc.). SPE PhOLED technology is particularly beneficial for solution-fabricated electrophosphorescent devices. Small transition moment of triplet emitters allows achieving a significant enhancement of the emission rate while keeping undesirable quenching processes introduced by the metal nanostructures at a reasonably low level. Plasmonic structures can be introduced easily into solution-fabricated PhOLEDs by blending and spin coating techniques and can be used for enhancement of performance in existing device architectures. This constitutes a significant benefit for a large scale fabrication of PhOLEDs, e.g. by roll-to-roll fabrication techniques. Besides multieexciton annihilation, the power efficacy of PhOLEDs is often limited by high operational bias voltages required for overcoming built-in potential barriers to injection and transport of electrical charges through a device. This problem is especially pronounced in solution processed OLEDs lacking the accuracy and precision of fabrication found in their small molecule counterparts. From this point of view, it seems beneficial to develop materials allowing reduction of the operation bias voltage via improvement of the charge injection. The materials sought have to be compatible with solution-based fabrication process and allow easy incorporation of metal nanostructures.

  16. Soft holographic interference lithography microlens for enhanced organic light emitting diode light extraction

    SciTech Connect (OSTI)

    Park, Joong-Mok; Gan, Zhengqing; Leung, Wai Y.; Liu, Rui; Ye, Zhuo; Constant, Kristen; Shinar, Joseph; Shinar, Ruth; Ho, Kai-Ming

    2011-06-06T23:59:59.000Z

    Very uniform 2 {micro}m-pitch square microlens arrays ({micro}LAs), embossed on the blank glass side of an indium-tin-oxide (ITO)-coated 1.1 mm-thick glass, are used to enhance light extraction from organic light-emitting diodes (OLEDs) by {approx}100%, significantly higher than enhancements reported previously. The array design and size relative to the OLED pixel size appear to be responsible for this enhancement. The arrays are fabricated by very economical soft lithography imprinting of a polydimethylsiloxane (PDMS) mold (itself obtained from a Ni master stamp that is generated from holographic interference lithography of a photoresist) on a UV-curable polyurethane drop placed on the glass. Green and blue OLEDs are then fabricated on the ITO to complete the device. When the {mu}LA is {approx}15 x 15 mm{sup 2}, i.e., much larger than the {approx}3 x 3 mm{sup 2} OLED pixel, the electroluminescence (EL) in the forward direction is enhanced by {approx}100%. Similarly, a 19 x 25 mm{sup 2} {mu}LA enhances the EL extracted from a 3 x 3 array of 2 x 2 mm{sup 2} OLED pixels by 96%. Simulations that include the effects of absorption in the organic and ITO layers are in accordance with the experimental results and indicate that a thinner 0.7 mm thick glass would yield a {approx}140% enhancement.

  17. A Polysilicon Active Matrix Organic Light Emitting Diode Display with Integrated Drivers R.M.A. Dawson, Z. Shen, D.A. Furst, S. Connor, J. Hsu, M.G. Kane, R.G. Stewart, A. Ipri

    E-Print Network [OSTI]

    A Polysilicon Active Matrix Organic Light Emitting Diode Display with Integrated Drivers R.S.A. Abstract The design of an active matrix organic light emitting diode (AMOLED) display using a polysilicon. Introduction Organic light emitting diodes (OLEDs) are presently of great interest due to their potential

  18. Thermal properties of organic light-emitting diodes

    SciTech Connect (OSTI)

    Bergemann, Kevin; Krasny, Robert; Forrest, Stephen R.

    2012-01-01T23:59:59.000Z

    Thermal management is important for the efficient operation of organic light-emitting diodes (OLED, or PHOLED) at high brightness, with the device operating temperature influencing both lifetime and performance. We apply a transmission-matrix approach to analytically model the effects of thermal conduction, convection and radiation on OLED temperature. The model predictions match experiment without requiring the use of fitting parameters. This allows for the simulation of the thermal response of various device architectures, materials combinations and environmental factors under a variety of operating conditions. Using these simulations, we find that 87% of the heat is dissipated through the air space adjacent to the glass package cap. Furthermore, an air gap between the device cathode and cap provides a significant thermal impedance. Minimizing the thickness of the internal air gap can lead to nearly room temperature operation, even at very high brightness.

  19. Demonstration Assessment of Light Emitting Diode (LED) Street...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Demonstration Assessment of Light Emitting Diode (LED) Street Lighting, Final Report Demonstration Assessment of Light Emitting Diode (LED) Street Lighting, Final Report This...

  20. Demonstration Assessment of Light-Emitting Diode (LED) Freezer...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Demonstration Assessment of Light-Emitting Diode (LED) Freezer Case Lighting Demonstration Assessment of Light-Emitting Diode (LED) Freezer Case Lighting This document is a report...

  1. Creation of a U.S. Phosphorescent OLED Lighting Panel Manufacturing Facility

    SciTech Connect (OSTI)

    Hack, Michael

    2013-09-30T23:59:59.000Z

    Universal Display Corporation (UDC) has pioneered high efficacy phosphorescent OLED (PHOLED™) technology to enable the realization of an exciting new form of high quality, energy saving solid-date lighting. In laboratory test devices, we have demonstrated greater than 100 lm/W conversion efficacy. In this program, Universal Display will demonstrate the scalability of its proprietary UniversalPHOLED technology and materials for the manufacture of white OLED lighting panels that meet commercial lighting targets. Moser Baer Technologies will design and build a U.S.- based pilot facility. The objective of this project is to establish a pilot phosphorescent OLED (PHOLED) manufacturing line in the U.S. Our goal is that at the end of the project, prototype lighting panels could be provided to U.S. luminaire manufacturers for incorporation into products to facilitate the testing of design concepts and to gauge customer acceptance, so as to facilitate the growth of the embryonic U.S. OLED lighting industry. In addition, the team will provide a cost of ownership analysis to quantify production costs including OLED performance metrics which relate to OLED cost such as yield, materials usage, cycle time, substrate area, and capital depreciation. This project was part of a new DOE initiative designed to help establish and maintain U.S. leadership in this program will support key DOE objectives by showing a path to meet Department of Energy Solid-State Lighting Manufacturing Roadmap cost targets, as well as meeting its efficiency targets by demonstrating the energy saving potential of our technology through the realization of greater than 76 lm/W OLED lighting panels by 2012.

  2. OLED area illumination source

    DOE Patents [OSTI]

    Foust, Donald Franklin (Scotia, NY); Duggal, Anil Raj (Niskayuna, NY); Shiang, Joseph John (Niskayuna, NY); Nealon, William Francis (Gloversville, NY); Bortscheller, Jacob Charles (Clifton Park, NY)

    2008-03-25T23:59:59.000Z

    The present invention relates to an area illumination light source comprising a plurality of individual OLED panels. The individual OLED panels are configured in a physically modular fashion. Each OLED panel comprising a plurality of OLED devices. Each OLED panel comprises a first electrode and a second electrode such that the power being supplied to each individual OLED panel may be varied independently. A power supply unit capable of delivering varying levels of voltage simultaneously to the first and second electrodes of each of the individual OLED panels is also provided. The area illumination light source also comprises a mount within which the OLED panels are arrayed.

  3. Sandia National Laboratories: light-emitting diode

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    light-emitting diode Sandian Receives the Illuminating Engineering Society of North America, South Region Technical Award On December 12, 2014, in Capabilities, Energy, Energy...

  4. Broadband light-emitting diode

    DOE Patents [OSTI]

    Fritz, Ian J. (Albuquerque, NM); Klem, John F. (Sandia Park, NM); Hafich, Michael J. (Albuquerque, NM)

    1998-01-01T23:59:59.000Z

    A broadband light-emitting diode. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3-2 .mu.m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-division-multiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft.

  5. Broadband light-emitting diode

    DOE Patents [OSTI]

    Fritz, I.J.; Klem, J.F.; Hafich, M.J.

    1998-07-14T23:59:59.000Z

    A broadband light-emitting diode is disclosed. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3--2 {micro}m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-divisionmultiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft. 10 figs.

  6. Record External Quantum Efficiency in Blue OLED Device

    Broader source: Energy.gov [DOE]

    Scientists at Pacific Northwest National Laboratory (PNNL) have created a blue organic light emitting diode (OLED) with an external quantum efficiency (EQE) of 11% at 800 cd/m2, exceeding their previous record EQE of 8%. The EQE of blue OLEDs is a major challenge in OLED technology development. This achievement is particularly notable since it was accomplished at a much lower operating voltage (6.2V) than previous demonstrations using similar structures, revealing the potential for much higher power efficiencies.

  7. Development of ZnO Based Light Emitting Diodes and Laser Diodes

    E-Print Network [OSTI]

    Kong, Jieying

    2012-01-01T23:59:59.000Z

    E. Fred Schubert, Light-Emitting Diodes, New York (2006) [8]ZnO homojunction light emitting diode 3. 1. Motivation ofAlGaAs red light-emitting diodes, in: G.B. Stringfellow, M.

  8. Top-emitting Organic Light-Emitting Diode with a Cap Layer Chengfeng Qiu, Huajun Peng, Haiying Chen, Zhilang Xie,

    E-Print Network [OSTI]

    Kwok, Hoi S.

    , Kowloon, Hong Kong, China ABSTRACT For top emitting Organic Light-Emitting Diodes (OLED), the study of top layer is very important aiming to acquire good device performance. In this report, Pt as anode for Cu coated on glass as anode, copper (II) phthalocyanine (CuPc) as organic buffer layer, N,N'- diphenyl

  9. Room-temperature spin-polarized organic light-emitting diodes with a single ferromagnetic electrode

    SciTech Connect (OSTI)

    Ding, Baofu, E-mail: b.ding@ecu.edu.au; Alameh, Kamal, E-mail: k.alameh@ecu.edu.au [Electron Science Research Institute, Edith Cowan University, 270 Joondalup Drive, Joondalup WA 6027 Australia (Australia); Song, Qunliang [Institute for Clean Energy and Advanced Materials, Southwest University, Chongqing 400715 (China)

    2014-05-19T23:59:59.000Z

    In this paper, we demonstrate the concept of a room-temperature spin-polarized organic light-emitting diode (Spin-OLED) structure based on (i) the deposition of an ultra-thin p-type organic buffer layer on the surface of the ferromagnetic electrode of the Spin-OLED and (ii) the use of oxygen plasma treatment to modify the surface of that electrode. Experimental results demonstrate that the brightness of the developed Spin-OLED can be increased by 110% and that a magneto-electroluminescence of 12% can be attained for a 150?mT in-plane magnetic field, at room temperature. This is attributed to enhanced hole and room-temperature spin-polarized injection from the ferromagnetic electrode, respectively.

  10. Compact and efficient method of RGB to RGBW data conversion for OLED microdisplays 

    E-Print Network [OSTI]

    Can, Chi

    2012-06-25T23:59:59.000Z

    Colour Electronic Information Displays (EIDs) typically consist of pixels that are made up of red, green and blue (RGB) subpixels. A recent technology, Organic Light Emitting Diode (OLED), offers the potential to create ...

  11. Enhancement of hole injection and electroluminescence by ordered Ag nanodot array on indium tin oxide anode in organic light emitting diode

    SciTech Connect (OSTI)

    Jung, Mi, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Mo Yoon, Dang; Kim, Miyoung [Korea Printed Electronics Center, Korea Electronics Technology Institute, Jeollabuk-do, 561-844 (Korea, Republic of); Kim, Chulki; Lee, Taikjin; Hun Kim, Jae; Lee, Seok; Woo, Deokha, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Lim, Si-Hyung [School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of)

    2014-07-07T23:59:59.000Z

    We report the enhancement of hole injection and electroluminescence (EL) in an organic light emitting diode (OLED) with an ordered Ag nanodot array on indium-tin-oxide (ITO) anode. Until now, most researches have focused on the improved performance of OLEDs by plasmonic effects of metal nanoparticles due to the difficulty in fabricating metal nanodot arrays. A well-ordered Ag nanodot array is fabricated on the ITO anode of OLED using the nanoporous alumina as an evaporation mask. The OLED device with Ag nanodot arrays on the ITO anode shows higher current density and EL enhancement than the one without any nano-structure. These results suggest that the Ag nanodot array with the plasmonic effect has potential as one of attractive approaches to enhance the hole injection and EL in the application of the OLEDs.

  12. MoO3 as combined hole injection layer and tapered spacer in combinatorial multicolor microcavity organic light emitting diodes

    SciTech Connect (OSTI)

    Liu, R.; Xu, Chun; Biswas, Rana; Shinar, Joseph; Shinar, Ruth

    2011-09-01T23:59:59.000Z

    Multicolor microcavity ({mu}C) organic light-emitting diode (OLED) arrays were fabricated simply by controlling the hole injection and spacer MoO{sub 3} layer thickness. The normal emission was tunable from {approx}490 to 640 nm and can be further expanded. A compact, integrated spectrometer with two-dimensional combinatorial arrays of {mu}C OLEDs was realized. The MoO{sub 3} yields more efficient and stable devices, revealing a new breakdown mechanism. The pixel current density reaches {approx}4 A/cm{sup 2} and a maximal normal brightness {approx}140 000 Cd/m{sup 2}, which improves photoluminescence-based sensing and absorption measurements.

  13. Energy Department Offers $10 Million for Energy-Saving Lighting...

    Energy Savers [EERE]

    technologies. This funding will help accelerate the development of high-quality light-emitting diode (LED) and organic light-emitting diode (OLED) products with the potential to...

  14. Novel Low Cost Organic Vapor Jet Printing of Striped High Efficiency Phosphorescent OLEDs for White Lighting

    SciTech Connect (OSTI)

    Mike Hack

    2008-12-31T23:59:59.000Z

    In this program, Universal Display Corporation and University of Michigan proposed to integrate three innovative concepts to meet the DOE's Solid State Lighting (SSL) goals: (1) high-efficiency phosphorescent organic light emitting device (PHOLED{trademark}) technology, (2) a white lighting design that is based on a series of red, green and blue OLED stripes, and (3) the use of a novel cost-effective, high rate, mask-less deposition process called organic vapor jet printing (OVJP). Our PHOLED technology offers up to four-times higher power efficiency than other OLED approaches for general lighting. We believe that one of the most promising approaches to maximizing the efficiency of OLED lighting sources is to produce stripes of the three primary colors at such a pitch (200-500 {mu}m) that they appear as a uniform white light to an observer greater than 1 meter (m) away from the illumination source. Earlier work from a SBIR Phase 1 entitled 'White Illumination Sources Using Striped Phosphorescent OLEDs' suggests that stripe widths of less than 500 {mu}m appear uniform from a distance of 1m without the need for an external diffuser. In this program, we intend to combine continued advances in this PHOLED technology with the striped RGB lighting design to demonstrate a high-efficiency, white lighting source. Using this background technology, the team has focused on developing and demonstrating the novel cost-effective OVJP process to fabricate these high-efficiency white PHOLED light sources. Because this groundbreaking OVJP process is a direct printing approach that enables the OLED stripes to be printed without a shadow mask, OVJP offers very high material utilization and high throughput without the costs and wastage associated with a shadow mask (i.e. the waste of material that deposits on the shadow mask itself). As a direct printing technique, OVJP also has the potential to offer ultra-high deposition rates (> 1,000 Angstroms/second) for any size or shaped features. As a result, we believe that this work will lead to the development of a cost-effective manufacturing solution to produce very-high efficiency OLEDs. By comparison to more common ink-jet printing (IJP), OVJP can also produce well-defined patterns without the need to pattern the substrate with ink wells or to dry/anneal the ink. In addition, the material set is not limited by viscosity and solvent solubility. During the program we successfully demonstrated a 6-inch x 6-inch PHOLED lighting panel consisting of fine-featured red, green and blue (R-G-B) stripes (1mm width) using an OVJP deposition system that was designed, procured and installed into UDC's cleanroom as part of this program. This project will significantly accelerate the DOE's ability to meet its 2015 DOE SSL targets of 70-150 lumens/Watt and less than $10 per 1,000 lumens for high CRI lighting index (76-90). Coupled with a low cost manufacturing path through OVJP, we expect that this achievement will enable the DOE to achieve its 2015 performance goals by the year 2013, two years ahead of schedule. As shown by the technical work performed under this program, we believe that OVJP is a very promising technology to produce low cost, high efficacy, color tunable light sources. While we have made significant progress to develop OVJP technology and build a pilot line tool to study basic aspects of the technology and demonstrate a lighting panel prototype, further work needs to be performed before its full potential and commercial viability can be fully assessed.

  15. World Record White OLED Performance Exceeds 100 lm/W

    Broader source: Energy.gov [DOE]

    Universal Display Corporation (UDC) has successfully demonstrated a record-breaking white organic light-emitting diode (WOLED) with a power efficacy of 102 lm/W at 1000 cd/m2 using its proprietary, high-efficiency phosphorescent OLED technology. This achievement represents a significant milestone for OLED technology, demonstrating performance that surpasses the power efficacy of incandescent bulbs with less than 15 lm/W and fluorescent lamps at 60-90 lm/W. Funded in part by DOE, UDC's achievement is a major step toward DOE's roadmap goal of a 150 lm/W commercial OLED light source by 2015.

  16. Water Cooling of High Power Light Emitting Diode Henrik Srensen

    E-Print Network [OSTI]

    Berning, Torsten

    Water Cooling of High Power Light Emitting Diode Henrik Sørensen Department of Energy Technology and product lifetime. The high power Light Emitting Diodes (LED) belongs to the group of electronics

  17. Entangled Light Emission From a Diode

    SciTech Connect (OSTI)

    Stevenson, R. M.; Shields, A. J. [Toshiba Research Europe Limited, 208 Cambridge Science Park, Cambridge CB4 0GZ (United Kingdom); Salter, C. L. [Toshiba Research Europe Limited, 208 Cambridge Science Park, Cambridge CB4 0GZ (United Kingdom); Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Farrer, I.; Nicoll, C. A.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom)

    2011-12-23T23:59:59.000Z

    Electrically-driven entangled photon generation is demonstrated for the first time using a single semiconductor quantum dot embedded in a light emitting diode structure. The entanglement fidelity is shown to be of sufficient quality for applications such as quantum key distribution.

  18. New Efficiency Record Achieved for White OLED Device

    Broader source: Energy.gov [DOE]

    Osram Opto-Semiconductors, Inc. has successfully demonstrated a white organic light emitting diode (OLED) with a record efficiency of 25 lumens per watt, the highest known efficiency achieved to date for a polymer-based white OLED. The 25 LPW cool-white-emitting device was produced by applying a standard external inorganic phosphor to Osram's record-breaking blue-emitting phosphorescent polymer device with a peak luminous efficacy of 14 LPW.

  19. Barrier performance optimization of atomic layer deposited diffusion barriers for organic light emitting diodes using x-ray reflectivity investigations

    SciTech Connect (OSTI)

    Singh, Aarti, E-mail: aarti.singh@namlab.com; Schröder, Uwe [Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany)] [Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany); Klumbies, Hannes; Müller-Meskamp, Lars; Leo, Karl [Dresden Innovation Center Energy Efficiency, Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden (Germany)] [Dresden Innovation Center Energy Efficiency, Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden (Germany); Geidel, Marion; Knaut, Martin; Hoßbach, Christoph; Albert, Matthias [Institute of Semiconductor and Microsystems Technology, Technische Universität Dresden, 01187 Dresden (Germany)] [Institute of Semiconductor and Microsystems Technology, Technische Universität Dresden, 01187 Dresden (Germany); Mikolajick, Thomas [Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany) [Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany); Institute of Semiconductor and Microsystems Technology, Technische Universität Dresden, 01187 Dresden (Germany)

    2013-12-02T23:59:59.000Z

    The importance of O{sub 3} pulse duration for encapsulation of organic light emitting diodes (OLEDs) with ultra thin inorganic atomic layer deposited Al{sub 2}O{sub 3} layers is demonstrated for deposition temperatures of 50 °C. X-ray reflectivity (XRR) measurements show that O{sub 3} pulse durations longer than 15?s produce dense and thin Al{sub 2}O{sub 3} layers. Correspondingly, black spot growth is not observed in OLEDs encapsulated with such layers during 91 days of aging under ambient conditions. This implies that XRR can be used as a tool for process optimization of OLED encapsulation layers leading to devices with long lifetimes.

  20. Comparison of light out-coupling enhancements in single-layer blue-phosphorescent organic light emitting diodes using small-molecule or polymer hosts

    SciTech Connect (OSTI)

    Chang, Yung-Ting [Institute of Chemistry, Academia Sinica, Taipei, Taiwan 11529, Taiwan (China); Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan 10617, Taiwan (China); Liu, Shun-Wei [Department of Electronic Engineering, Mingchi University of Technology, New Taipei, Taiwan 24301, Taiwan (China); Yuan, Chih-Hsien; Lee, Chih-Chien [Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan 10607, Taiwan (China); Ho, Yu-Hsuan; Wei, Pei-Kuen [Research Center for Applied Science Academia Sinica, Taipei, Taiwan 11527, Taiwan (China); Chen, Kuan-Yu [Chilin Technology Co., LTD, Tainan City, Taiwan 71758, Taiwan (China); Lee, Yi-Ting; Wu, Min-Fei; Chen, Chin-Ti, E-mail: cchen@chem.sinica.edu.tw, E-mail: chihiwu@cc.ee.ntu.edu.tw [Institute of Chemistry, Academia Sinica, Taipei, Taiwan 11529, Taiwan (China); Wu, Chih-I, E-mail: cchen@chem.sinica.edu.tw, E-mail: chihiwu@cc.ee.ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan 10617, Taiwan (China)

    2013-11-07T23:59:59.000Z

    Single-layer blue phosphorescence organic light emitting diodes (OLEDs) with either small-molecule or polymer hosts are fabricated using solution process and the performances of devices with different hosts are investigated. The small-molecule device exhibits luminous efficiency of 14.7?cd/A and maximum power efficiency of 8.39?lm/W, which is the highest among blue phosphorescence OLEDs with single-layer solution process and small molecular hosts. Using the same solution process for all devices, comparison of light out-coupling enhancement, with brightness enhancement film (BEF), between small-molecule and polymer based OLEDs is realized. Due to different dipole orientation and anisotropic refractive index, polymer-based OLEDs would trap less light than small molecule-based OLEDs internally, about 37% better based simulation results. In spite of better electrical and spectroscopic characteristics, including ambipolar characteristics, higher carrier mobility, higher photoluminescence quantum yield, and larger triplet state energy, the overall light out-coupling efficiency of small molecule-based devices is worse than that of polymer-based devices without BEF. However, with BEF for light out-coupling enhancement, the improved ratio in luminous flux and luminous efficiency for small molecule based device is 1.64 and 1.57, respectively, which are significantly better than those of PVK (poly-9-vinylcarbazole) devices. In addition to the theoretical optical simulation, the experimental data also confirm the origins of differential light-outcoupling enhancement. The maximum luminous efficiency and power efficiency are enhanced from 14.7?cd/A and 8.39?lm/W to 23?cd/A and 13.2?lm/W, respectively, with laminated BEF, which are both the highest so far for single-layer solution-process blue phosphorescence OLEDs with small molecule hosts.

  1. Solid-State lighting ReSeaRch & development at Sandia national laboRatoRieS

    E-Print Network [OSTI]

    &d Technology snapshoT SSL uses inorganic or organic light-emitting diodes (LEDs or OLEDs)--which are solid

  2. Light extraction enhanced white light-emitting diodes with multi-layered phosphor configuration

    E-Print Network [OSTI]

    You, Jiun Pyng; Tran, Nguyen T.; Shi, Frank G.

    2010-01-01T23:59:59.000Z

    and J. K. Kim, “Solid-state light sources getting smart,”power phosphor-converted light-emitting diodes based on III-for phosphor- based white-light-emitting diodes,” Appl.

  3. Highly Efficient Silicon Light Emitting Diode

    E-Print Network [OSTI]

    Leminh Holleman Wallinga; P. Leminh; J. Holleman; H. Wallinga

    2000-01-01T23:59:59.000Z

    In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a local strain field that is formed by dislocation loop arrays. The dependence of device electroluminescent properties on the annealing conditions is carefully examined as a high temperature process has profound influence on these dislocations. Increased luminescent intensity at higher device temperature, together with pure diffusion current conduction mechanism evidently shows the influence of the dislocation loops. The electrical properties of the diode are reasonable with low leakage reverse current.

  4. Light extraction analysis and enhancement in a quantum dot light emitting diode

    E-Print Network [OSTI]

    Wu, Shin-Tson

    Light extraction analysis and enhancement in a quantum dot light emitting diode Ruidong Zhu outcoupling and angular performance of quantum dot light emitting diode (QLED). To illustrate the design principles, we use a red QLED as an example and compare its performance with an organic light emitting diode

  5. Performance enhancement of organic light-emitting diodes by chlorine plasma treatment of indium tin oxide

    SciTech Connect (OSTI)

    Cao, X. A.; Zhang, Y. Q. [Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, West Virginia 26506 (United States)

    2012-04-30T23:59:59.000Z

    The characteristics of green phosphorescent organic light-emitting diodes (OLEDs) fabricated on ITO/glass substrates pretreated with low-energy O{sub 2} and Cl{sub 2} plasma were compared. At 20 mA/cm{sup 2}, the OLEDs with O{sub 2} and Cl{sub 2} plasma-treated indium tin oxide (ITO) had voltages of 9.6 and 7.6 eV, and brightness of 9580 and 12380 cd/m{sup 2}, respectively. At {approx}10{sup 4} cd/m{sup 2}, the latter had a 30% higher external quantum efficiency and a 74% higher power efficiency. Photoelectron spectroscopies revealed that Cl{sub 2} plasma treatment created stable In-Cl bonds and raised the work function of ITO by up to 0.9 eV. These results suggest that the better energy level alignment at the chlorinated ITO/organic interface enhances hole injection, leading to more efficient and more reliable operation of the OLEDs. The developed plasma chlorination process is very effective for surface modification of ITO and compatible with the fabrication of various organic electronics.

  6. TRICOLOR LIGHT EMITTING DIODE DOT MATRIX DISPLAY SYSTEM WITHAUDIO OUTPUT

    E-Print Network [OSTI]

    Pang, Grantham

    1 TRICOLOR LIGHT EMITTING DIODE DOT MATRIX DISPLAY SYSTEM WITHAUDIO OUTPUT Grantham Pang, Chi emitting diodes; tricolor display; audio communication. I. Introduction This paper relates to a tricolor broadcasting through the visible light rays transmitted by the display panel or assembly. Keywords: light

  7. Achieving Record Efficiency for Blue OLEDs by Controlling the Charge Balance

    Broader source: Energy.gov [DOE]

    Researchers at the University of Florida (UF) have demonstrated a blue phosphorescent organic light-emitting diode (OLED) with a peak power efficiency of 50 lm/W and an external quantum efficiency exceeding 20 percent at a luminance of 1,000 cd/m2, using no external light extraction techniques. This accomplishment is believed to be the world record in blue OLED efficiency.

  8. 23.2 / J. X. Sun 23.2: An Efficient Stacked OLED with Double-Sided Light Emission

    E-Print Network [OSTI]

    23.2 / J. X. Sun 23.2: An Efficient Stacked OLED with Double-Sided Light Emission J. X. Sun, X. L;23.2 / J. X. Sun 2. Experimental Details The SOLED were fabricated on 75nm-ITO coated glass with a sheet

  9. Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    semipolar light-emitting diodes (LEDs) on low-defect bulk gallium nitride (GaN) substrates. Peak internal quantum efficiency (IQE) values of greater than 80% are...

  10. Full phosphorescent white-light organic light-emitting diodes with improved color stability and efficiency by fine tuning primary emission contributions

    SciTech Connect (OSTI)

    Hua, Wang, E-mail: wmsu2008@sinano.ac.cn, E-mail: wanghua001@tyut.edu.cn; Du, Xiaogang [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024 (China) [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024 (China); Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024 (China); Su, Wenming, E-mail: wmsu2008@sinano.ac.cn, E-mail: wanghua001@tyut.edu.cn; Zhang, Dongyu [Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, suzhou 215123 (China)] [Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, suzhou 215123 (China); Lin, Wenjing [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024 (China) [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024 (China); Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024 (China); Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, suzhou 215123 (China)

    2014-02-15T23:59:59.000Z

    In this paper, a novel type of white-light organic light emitting diode (OLED) with high color stability was reported, in which the yellow-light emission layer of (4,4{sup ?}-N,N{sup ?}-dicarbazole)biphenyl (CBP) : tris(2-phenylquinoline-C2,N{sup ?})iridium(III) (Ir(2-phq){sub 3}) was sandwiched by double blue-light emission layers of 1,1-bis-[(di-4-tolylamino)pheny1]cyclohexane (TAPC) : bis[4,6-(di-fluorophenyl)-pyridinato-N,C2{sup ?}]picolinate (FIrpic) and tris[3-(3-pyridyl)mesityl]borane (3TPYMB):FIrpic. And, it exhibited the maximum current efficiency of 33.1 cd/A, the turn-on voltage at about 3 V and the maximum luminance in excess of 20000 cd/m{sup 2}. More important, it realized very stable white-light emission, and its CIE(x, y) coordinates only shift from (0.34, 0.37) to (0.33, 0.37) as applied voltage increased from 5 V to 12 V. It is believed that the new scheme in emission layer of white-light OLED can fine tune the contribution of primary emission with applied voltage changed, resulting in high quality white-light OLED.

  11. Enhanced light emission from top-emitting organic light-emitting diodes by optimizing surface plasmon polariton losses

    E-Print Network [OSTI]

    Fuchs, Cornelius; Wieczorek, Martin; Gather, Malte C; Hofmann, Simone; Reineke, Sebastian; Leo, Karl; Scholz, Reinhard

    2015-01-01T23:59:59.000Z

    We demonstrate enhanced light extraction for monochrome top-emitting organic light-emitting diodes (OLEDs). The enhancement by a factor of 1.2 compared to a reference sample is caused by the use of a hole transport layer (HTL) material possessing a low refractive index (1.52). The low refractive index reduces the in-plane wave vector of the surface plasmon polariton (SPP) excited at the interface between the bottom opaque metallic electrode (anode) and the HTL. The shift of the SPP dispersion relation decreases the power dissipated into lost evanescent excitations and thus increases the outcoupling efficiency, although the SPP remains constant in intensity. The proposed method is suitable for emitter materials owning isotropic orientation of the transition dipole moments as well as anisotropic, preferentially horizontal orientation, resulting in comparable enhancement factors. Furthermore, for sufficiently low refractive indices of the HTL material, the SPP can be modeled as a propagating plane wave within ot...

  12. OLED lighting devices having multi element light extraction and luminescence conversion layer

    DOE Patents [OSTI]

    Krummacher, Benjamin Claus (Regensburg, DE); Antoniadis, Homer (Mountain View, CA)

    2010-11-16T23:59:59.000Z

    An apparatus such as a light source has a multi element light extraction and luminescence conversion layer disposed over a transparent layer of the light source and on the exterior of said light source. The multi-element light extraction and luminescence conversion layer includes a plurality of light extraction elements and a plurality of luminescence conversion elements. The light extraction elements diffuses the light from the light source while luminescence conversion elements absorbs a first spectrum of light from said light source and emits a second spectrum of light.

  13. Device structure for OLED light device having multi element light extraction and luminescence conversion layer

    DOE Patents [OSTI]

    Antoniadis; Homer (Mountain View, CA), Krummacher; Benjamin Claus (Regensburg, DE)

    2008-01-22T23:59:59.000Z

    An apparatus such as a light source has a multi-element light extraction and luminescence conversion layer disposed over a transparent layer of the light source and on the exterior of said light source. The multi-element light extraction and luminescence conversion layer includes a plurality of light extraction elements and a plurality of luminescence conversion elements. The light extraction elements diffuses the light from the light source while luminescence conversion elements absorbs a first spectrum of light from said light source and emits a second spectrum of light.

  14. White light emitting diode as liquid crystal display backlight

    E-Print Network [OSTI]

    Soon, Chian Myau

    2007-01-01T23:59:59.000Z

    The discovery of high brightness (white) light emitting diode (LED) is considered as a real threat to the current lighting industry in various applications. One of the most promising sectors would be using white LED to ...

  15. Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with

    E-Print Network [OSTI]

    Gilchrist, James F.

    Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes@lehigh.edu Abstract: Improvement of light extraction efficiency of InGaN light emitting diodes (LEDs) using microstructures on the light extraction efficiency of III-Nitride LEDs was studied. Depending on the size

  16. High power light emitting diode based setup for photobleaching fluorescent impurities

    E-Print Network [OSTI]

    Kaufman, Laura

    High power light emitting diode based setup for photobleaching fluorescent impurities Tobias K be photobleached before final sample preparation. The instrument consists of high power light emitting diodes

  17. Low-Cost Light-Emitting Diode Luminaire for General Illumination...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Cost Light-Emitting Diode Luminaire for General Illumination Low-Cost Light-Emitting Diode Luminaire for General Illumination Presenter: Paul Fini, CREE Santa Barbara Technology...

  18. Organic light emitting diodes with structured electrodes

    DOE Patents [OSTI]

    Mao, Samuel S.; Liu, Gao; Johnson, Stephen G.

    2012-12-04T23:59:59.000Z

    A cathode that contain nanostructures that extend into the organic layer of an OLED has been described. The cathode can have an array of nanotubes or a layer of nanoclusters extending out from its surface. In another arrangement, the cathode is patterned and etched to form protruding nanostructures using a standard lithographic process. Various methods for fabricating these structures are provided, all of which are compatible with large-scale manufacturing. OLEDs made with these novel electrodes have greatly enhanced electron injection, have good environmental stability.

  19. Top-emission Si-based phosphor organic light emitting diode with Au doped ultrathin n-Si film anode and bottom Al mirror

    SciTech Connect (OSTI)

    Li, Y. Z.; Xu, W. J.; Ran, G. Z. [State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Qin, G. G. [State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Key Lab of Semiconductor Materials, CAS, Beijing 100083 (China)

    2009-07-20T23:59:59.000Z

    We report a highly efficient top-emission Si-based phosphor organic light emitting diode (PhOLED) with an ultrathin polycrystalline n-Si:Au film anode and a bottom Al mirror. This anode is formed by magnetron sputtering followed by Ni induced crystallization and then Au diffusion. By optimizing the thickness of the n-Si:Au film anode, the Au diffusion temperature, and the other parameters of the PhOLED, the highest current and power efficiencies of the n-Si:Au film anode PhOLED reached 85{+-}9 cd/A and 80{+-}8 lm/W, respectively, corresponding to an external quantum efficiency of 21{+-}2% and a power conversion efficiency of 15{+-}2%, respectively, which are about 60% and 110% higher than those of the indium tin oxide anode counterpart and 70% and 50% higher than those of the bulk n{sup +}-Si:Au anode counterpart, respectively.

  20. Driving conditions dependence of magneto-electroluminescence in tri-(8-hydroxyquinoline)-aluminum based organic light emitting diodes

    E-Print Network [OSTI]

    Peng, Qiming; Li, Xianjie; Li, Mingliang; Li, Feng

    2011-01-01T23:59:59.000Z

    we investigated the magneto-electroluminescence (MEL) in tri-(8-hydroxyquinoline)-aluminum based organic light-emitting diodes (OLEDs) through the steady-state and transient method simultaneously. The MELs show the great different behaviors when we turn the driving condition from a constant voltage to a pulse voltage. For devices driven by the constant voltage, the MELs are similar with the literature data; for devices driven by the pulse voltage, the MELs are quite different, they firstly increase to a maximum then decrease as the magnetic field increases continuously. Negative MELs can be seen when both the magnetic field and driving voltage are high enough.

  1. Thermo-electrically pumped semiconductor light emitting diodes

    E-Print Network [OSTI]

    Santhanam, Parthiban

    2014-01-01T23:59:59.000Z

    Thermo-electric heat exchange in semiconductor light emitting diodes (LEDs) allows these devices to emit optical power in excess of the electrical power used to drive them, with the remaining power drawn from ambient heat. ...

  2. White organic light-emitting diodes with an ultra-thin premixed emitting layer

    E-Print Network [OSTI]

    Jeon, T; Tondelier, Denis; Bonnassieux, Yvan; Forget, Sebastien; Chenais, Sebastien; Ishow, Elena

    2014-01-01T23:59:59.000Z

    We described an approach to achieve fine color control of fluorescent White Organic Light-Emitting Diodes (OLED), based on an Ultra-thin Premixed emitting Layer (UPL). The UPL consists of a mixture of two dyes (red-emitting 4-di(4'-tert-butylbiphenyl-4-yl)amino-4'-dicyanovinylbenzene or fvin and green-emitting 4-di(4'-tert-butylbiphenyl-4-yl)aminobenzaldehyde or fcho) premixed in a single evaporation cell: since these two molecules have comparable structures and similar melting temperatures, a blend can be evaporated, giving rise to thin films of identical and reproducible composition compared to those of the pre-mixture. The principle of fine color tuning is demonstrated by evaporating a 1-nm-thick layer of this blend within the hole-transport layer (4,4'-bis[N-(1-naphtyl)-N-phenylamino]biphenyl (\\alpha-NPB)) of a standard fluorescent OLED structure. Upon playing on the position of the UPL inside the hole-transport layer, as well as on the premix composition, two independent parameters are available to finel...

  3. Wire-shaped semiconductor light-emitting diodes for general-purpose lighting

    SciTech Connect (OSTI)

    Mauk, Michael G.

    2002-10-28T23:59:59.000Z

    The object of this work is to develop and optimize a new type of light-emitting diode (LED) with a wire-shaped, cylindrical geometry.

  4. Numerical study of the influence of applied voltage on the current balance factor of single layer organic light-emitting diodes

    SciTech Connect (OSTI)

    Lu, Fei-ping, E-mail: lufp-sysu@163.com; Liu, Xiao-bin; Xing, Yong-zhong [College of Physics and Information Science, Tianshui Normal University, Tianshui 741001 (China)

    2014-04-28T23:59:59.000Z

    Current balance factor (CBF) value, the ratio of the recombination current density and the total current density of a device, has an important function in fluorescence-based organic light-emitting diodes (OLEDs), as well as in the performance of the organic electrophosphorescent devices. This paper investigates the influence of the applied voltage of a device on the CBF value of single layer OLED based on the numerical model of a bipolar single layer OLED with organic layer trap free and without doping. Results show that the largest CBF value can be achieved when the electron injection barrier (?{sub n}) is equal to the hole injection barrier (?{sub p}) in the lower voltage region at any instance. The largest CBF in the higher voltage region can be achieved in the case of ?{sub n}?>??{sub p} under the condition of electron mobility (?{sub 0n}) > hole mobility (?{sub 0p}), whereas the result for the case of ?{sub 0n}?OLED working mechanism and help in the future fabrication of high efficiency OLEDs.

  5. Light-Emitting Diodes in the Solid-State Lighting Systems

    E-Print Network [OSTI]

    Sparavigna, Amelia Carolina

    2014-01-01T23:59:59.000Z

    Red and green light-emitting diodes (LEDs) had been produced for several decades before blue emitting diodes, suitable for lighting applications, were widely available. Today, we have the possibility of combining the three fundamental colours to have a bright white light. And therefore, a new form of lighting, the solid-state lighting, has now become a reality. Here we discuss LEDs and some of their applications in displays and lamps.

  6. Alternative p-doped hole transport material for low operating voltage and high efficiency organic light-emitting diodes

    SciTech Connect (OSTI)

    Murawski, Caroline, E-mail: caroline.murawski@iapp.de; Fuchs, Cornelius; Hofmann, Simone; Leo, Karl [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Str. 1, 01062 Dresden (Germany); Gather, Malte C. [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Str. 1, 01062 Dresden (Germany); SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, KY16 9SS Scotland (United Kingdom)

    2014-09-15T23:59:59.000Z

    We investigate the properties of N,N?-[(Diphenyl-N,N?-bis)9,9,-dimethyl-fluoren-2-yl]-benzidine (BF-DPB) as hole transport material (HTL) in organic light-emitting diodes (OLEDs) and compare BF-DPB to the commonly used HTLs N,N,N?,N?-tetrakis(4-methoxyphenyl)-benzidine (MeO-TPD), 2,2?,7,7?-tetrakis(N,N?-di-p-methylphenylamino)-9,9?-spirobifluorene (Spiro-TTB), and N,N?-di(naphtalene-1-yl)-N,N?-diphenylbenzidine (NPB). The influence of 2,2?-(perfluoronaphthalene-2,6-diylidene)dimalononitrile (F6-TCNNQ p-dopant) concentration in BF-DPB on the operation voltage and efficiency of red and green phosphorescent OLEDs is studied; best results are achieved at 4?wt. % doping. Without any light extraction structure, BF-DPB based red (green) OLEDs achieve a luminous efficacy of 35?.1?lm/W (74?.0?lm/W) at 1000?cd/m{sup 2} and reach a very high brightness of 10?000 cd/m{sup 2} at a very low voltage of 3.2 V (3.1 V). We attribute this exceptionally low driving voltage to the high ionization potential of BF-DPB which enables more efficient hole injection from BF-DPB to the adjacent electron blocking layer. The high efficiency and low driving voltage lead to a significantly lower luminous efficacy roll-off compared to the other compounds and render BF-DPB an excellent HTL material for highly efficient OLEDs.

  7. Depth of cure and compressive strength of dental composites cured with blue light emitting diodes (LEDs)

    E-Print Network [OSTI]

    Ashworth, Stephen H.

    Depth of cure and compressive strength of dental composites cured with blue light emitting diodes with either a light emitting diode (LED) based light curing unit (LCU) or a conventional halogen LCU do reserved. Keywords: Blue light emitting diodes; Light curing unit; Composites; Irradiance; Spectrum; Depth

  8. Green Light-Emitting Diode Makes Highly Efficient White Light; The Spectrum of Clean Energy Innovation (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2010-06-01T23:59:59.000Z

    Fact sheet describing NREL's green light emitting diode that can lead to higher efficiency white light used in indoor lighting applications.

  9. COMMUNIQU DE PRESSE NATIONAL I PARIS I 31 JANVIER 2014 La course la miniaturisation des diodes lectroluminescentes (DEL, en anglais : Light-

    E-Print Network [OSTI]

    Arleo, Angelo

    diodes électroluminescentes (DEL, en anglais : Light- Emitting Diode, LED) vient sans doute de franchir l

  10. Point defect engineered Si sub-bandgap light-emitting diode

    E-Print Network [OSTI]

    Bao, Jiming

    Point defect engineered Si sub-bandgap light-emitting diode Jiming Bao1 , Malek Tabbal1,2 , Taegon light emission in Si and demonstrate a sub-bandgap light emitting diode based on the introduction OCIS codes: (230.3670) Light-emitting diodes; (160.6000) Semiconductors; (130-0250) Optoelectronics

  11. Using prismatic microstructured films for image blending in OLEDS

    DOE Patents [OSTI]

    Haenichen, Lukas (Anspach, DE); Pschenitzka, Florian (San Francisco, CA)

    2009-09-08T23:59:59.000Z

    An apparatus such as a light source is disclosed which has an OLED device and a microstructured film disposed on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The microstructured film contains features which diffuse light emitted by said OLED device and increase the luminance of the device.

  12. Multispectral imaging of the ocular fundus using light emitting diode illumination

    E-Print Network [OSTI]

    Claridge, Ela

    Multispectral imaging of the ocular fundus using light emitting diode illumination N. L. Everdell,1 on light emitting diode LED illumination that produces multispectral optical images of the human ocular

  13. High-Efficiency and Stable White Organic Light-Emitting Diode...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Efficiency and Stable White Organic Light-Emitting Diode Using a Single Emitter High-Efficiency and Stable White Organic Light-Emitting Diode Using a Single Emitter Presenter: Jian...

  14. Injection and transport processes in organic light emitting diodes based on N. Huby a,b

    E-Print Network [OSTI]

    Boyer, Edmond

    1 Injection and transport processes in organic light emitting diodes based on a silole. N. Huby a- conductors in light emitting diodes1 . The different fields of research around the organic electronic allowed

  15. Green exciplex emission from a bilayer light-emitting diode containing a rare earth ternary complex

    E-Print Network [OSTI]

    Huang, Yanyi

    Green exciplex emission from a bilayer light-emitting diode containing a rare earth ternary complex form 18 October 2001 Abstract A bilayer organic light-emitting diode using a blue-fluorescent yttrium

  16. New OLED Lighting Systems Shine Bright, Save Energy | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the.pdfBreaking ofOilNEW HAMPSHIREof EnergyBulbs | Department ofofWins R&DCyberOLED

  17. Thermoelectrically Pumped Light-Emitting Diodes Operating above Unity Efficiency

    E-Print Network [OSTI]

    Santhanam, Parthiban

    A heated semiconductor light-emitting diode at low forward bias voltage V

  18. Flip-chip light emitting diode with resonant optical microcavity

    SciTech Connect (OSTI)

    Gee, James M.; Bogart, Katherine H.A.; Fischer, Arthur J.

    2005-11-29T23:59:59.000Z

    A flip-chip light emitting diode with enhanced efficiency. The device structure employs a microcavity structure in a flip-chip configuration. The microcavity enhances the light emission in vertical modes, which are readily extracted from the device. Most of the rest of the light is emitted into waveguided lateral modes. Flip-chip configuration is advantageous for light emitting diodes (LEDs) grown on dielectric substrates (e.g., gallium nitride LEDs grown on sapphire substrates) in general due to better thermal dissipation and lower series resistance. Flip-chip configuration is advantageous for microcavity LEDs in particular because (a) one of the reflectors is a high-reflectivity metal ohmic contact that is already part of the flip-chip configuration, and (b) current conduction is only required through a single distributed Bragg reflector. Some of the waveguided lateral modes can also be extracted with angled sidewalls used for the interdigitated contacts in the flip-chip configuration.

  19. Correlation between the Indium Tin Oxide morphology and the performances of polymer light-emitting diodes

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    : This paper reports on performance enhancement of polymer light-emitting diodes (PLEDs) based on poly(2,5-bis. Keywords : Polymer light emitting diode; Indium tin oxide; Atomic force microscopy; Rutherford backscattering spectroscopy 1. Introduction Polymer light-emitting diodes (PLEDs) have received worldwide

  20. High efficiency light emitting diode with anisotropically etched GaN-sapphire interface

    E-Print Network [OSTI]

    High efficiency light emitting diode with anisotropically etched GaN- sapphire interface M. H. Lo and optimization of a light-emitting diode projection micro-stereolithography three-dimensional manufacturingGaN micro-light emitting diodes Appl. Phys. Lett. 101, 231110 (2012) A bright cadmium-free, hybrid organic

  1. Room temperature 1.6 m electroluminescence from Ge light emitting diode on Si substrate

    E-Print Network [OSTI]

    Vuckovic, Jelena

    Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate Szu n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device.4670) Optical materials; (230.3670) Light-emitting diodes. References and links 1. L. C. Kimerling, "Silicon

  2. Vertical Pillar-Superlattice Array and Graphene Hybrid Light Emitting Diodes

    E-Print Network [OSTI]

    Rogers, John A.

    Vertical Pillar-Superlattice Array and Graphene Hybrid Light Emitting Diodes Jung Min Lee, Jae a class of light emitting diode (LED) with interesting mechanical, optical, and electrical characteristics, light-emitting diodes, 3D architectures, transparent electrodes V ertical arrays of one-dimensional (1D

  3. White emitting polyfluorene functionalized with azide hybridized on near-UV light emitting diode

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    White emitting polyfluorene functionalized with azide hybridized on near-UV light emitting diode generation using CdSe/ZnS core-shell nanocrystals hybridized with InGaN/GaN light emitting diodesGaN/conjugated polymer hybrid light-emitting diodes," Appl. Phys. Lett. 70, 2664-2666 (1997). 9. H. V. Demir, S

  4. A description and evaluation of light-emitting diode displays for generation of visual stimuli*

    E-Print Network [OSTI]

    Massaro, Dominic

    A description and evaluation of light-emitting diode displays for generation of visual stimuli 53706 A description of the design and function of light-emitting diode (LED) display modules is given (Time, April 1972). Light-emitting diodes (L~Ds) are examples of these spin-offs, LED display devices

  5. Demonstration Assessment of Light-Emitting Diode Roadway Lighting on the FDR Drive in New York, New York

    SciTech Connect (OSTI)

    Myer, Michael; Hazra, Oindrila; Kinzey, Bruce R.

    2011-12-01T23:59:59.000Z

    This a report about a field study of light-emitting diodes street lights by four different manufacturers installed on the FDR Drive in New York City, NY.

  6. Poly (p-phenyleneneacetylene) light-emitting diodes

    DOE Patents [OSTI]

    Shinar, Joseph (Ames, IA); Swanson, Leland S. (Ames, IA); Lu, Feng (Ames, IA); Ding, Yiwei (Ames, IA); Barton, Thomas J. (Ames, IA); Vardeny, Zeev V. (Salt Lake City, UT)

    1994-10-04T23:59:59.000Z

    Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes.

  7. Fabrication of poly(p-phenyleneacetylene) light-emitting diodes

    DOE Patents [OSTI]

    Shinar, Joseph (Ames, IA); Swanson, Leland S. (Ames, IA); Lu, Feng (Ames, IA); Ding, Yiwei (Ames, IA)

    1994-08-02T23:59:59.000Z

    Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as A1 or A1/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes.

  8. Poly (p-phenyleneacetylene) light-emitting diodes

    DOE Patents [OSTI]

    Shinar, J.; Swanson, L.S.; Lu, F.; Ding, Y.; Barton, T.J.; Vardeny, Z.V.

    1994-10-04T23:59:59.000Z

    Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes. 8 figs.

  9. Fabrication of poly(p-phenyleneacetylene) light-emitting diodes

    DOE Patents [OSTI]

    Shinar, J.; Swanson, L.S.; Lu, F.; Ding, Y.

    1994-08-02T23:59:59.000Z

    Acetylene-containing poly(p-phenyleneacetylene) (PPA)-based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes. 8 figs.

  10. High efficiency III-nitride light-emitting diodes

    DOE Patents [OSTI]

    Crawford, Mary; Koleske, Daniel; Cho, Jaehee; Zhu, Di; Noemaun, Ahmed; Schubert, Martin F; Schubert, E. Fred

    2013-05-28T23:59:59.000Z

    Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

  11. spectroscopic techniques A Multi-Source Portable Light Emitting Diode Spectrofluorometer

    E-Print Network [OSTI]

    spectroscopic techniques A Multi-Source Portable Light Emitting Diode Spectrofluorometer SAFWAN only 1.5 kg that uses multiple light emitting diodes (LEDs) as excitation sources was developed emitting diodes; LEDs; Animal forage; Excitation-emission matrices; EEM. INTRODUCTION Movement of chemical

  12. Challenges in OLED Research and Development

    Broader source: Energy.gov [DOE]

    View the video about OLED technology’s advantages and what is needed to move it fully into the lighting market.

  13. Optical manifold for light-emitting diodes

    DOE Patents [OSTI]

    Chaves, Julio C.; Falicoff, Waqidi; Minano, Juan C.; Benitez, Pablo; Parkyn Jr., William A.; Alvarez, Roberto; Dross, Oliver

    2008-06-03T23:59:59.000Z

    An optical manifold for efficiently combining a plurality of blue LED outputs to illuminate a phosphor for a single, substantially homogeneous output, in a small, cost-effective package. Embodiments are disclosed that use a single or multiple LEDs and a remote phosphor, and an intermediate wavelength-selective filter arranged so that backscattered photoluminescence is recycled to boost the luminance and flux of the output aperture. A further aperture mask is used to boost phosphor luminance with only modest loss of luminosity. Alternative non-recycling embodiments provide blue and yellow light in collimated beams, either separately or combined into white.

  14. Development and Utilization of Host Materials for White Phosphorescent Organic Light-Emitting Diodes

    SciTech Connect (OSTI)

    Tang, Ching; Chen, Shaw

    2013-05-31T23:59:59.000Z

    Our project was primarily focused on the MYPP 2015 goal for white phosphorescent organic devices (PhOLEDs or phosphorescent organic light-emitting diodes) for solid-state lighting with long lifetimes and high efficiencies. Our central activity was to synthesize and evaluate a new class of host materials for blue phosphors in the PhOLEDs, known to be a weak link in the device operating lifetime. The work was a collaborative effort between three groups, one primarily responsible for chemical design and characterization (Chen), one primarily responsible for device development (Tang) and one primarily responsible for mechanistic studies and degradation analysis (Rothberg). The host materials were designed with a novel architecture that chemically links groups with good ability to move electrons with those having good ability to move “holes” (positive charges), the main premise being that we could suppress the instability associated with physical separation and crystallization of the electron conducting and hole conducting materials that might cause the devices to fail. We found that these materials do prevent crystallization and that this will increase device lifetimes but that efficiencies were reduced substantially due to interactions between the materials creating new low energy “charge transfer” states that are non-luminescent. Therefore, while our proposed strategy could in principle improve device lifetimes, we were unable to find a materials combination where the efficiency was not substantially compromised. In the course of our project, we made several important contributions that are peripherally related to the main project goal. First, we were able to prepare the proposed new family of materials and develop synthetic routes to make them efficiently. These types of materials that can transport both electrons and holes may yet have important roles to play in organic device technology. Second we developed an important new method for controlling the deposition profile of material so that arbitrary concentration gradients can be implemented in layers with mixed composition. These concentration profiles are known to increase device efficiency and longevity and we confirmed that experimentally. Third, we investigated a new method for analyzing degradation in devices using mass spectrometry to look for degradation products. We showed that these methods are not simple to interpret unambiguously and need to be used with caution.

  15. Demonstration Assessment of Light-Emitting Diode (LED) Accent Lighting at the Field Museum in Chicago, IL

    SciTech Connect (OSTI)

    Myer, Michael; Kinzey, Bruce R.

    2010-12-10T23:59:59.000Z

    This report reviews a demonstration of light-emitting diode (LED) accent lighting compared to halogen (typical) accent lighting in a gallery of the Field Museum in Chicago, IL.

  16. Energy Savings Estimates of Light Emitting Diodes in Niche Lighting...

    Office of Environmental Management (EM)

    in Niche Lighting Applications Prepared for: Building Technologies Program Office of Energy Efficiency and Renewable Energy U.S. Department of Energy Prepared by: Navigant...

  17. Breakthroughs in Practical-Sized, High Quality OLED Light Panel Source

    Broader source: Energy.gov [DOE]

    General Electric Global Research has achieved a major breakthrough, developing a fully functional 2 ft. x 2 ft. light panel that produces more than 1200 lumens of quality white light with an efficacy of 15 lumens per watt. This device offers 50% better energy performance than their previous device, breaking two world records.

  18. UDC Demonstrates Phosphorescent OLED Systems

    Broader source: Energy.gov [DOE]

    Universal Display Corporation (UDC), along with project partners Armstrong World Industries and the universities of Michigan and Southern California, have successfully demonstrated two phosphorescent OLED (PHOLED™) luminaire systems, the first of their kind in the U.S. This achievement marks a critical step in the development of practical OLED lighting in a complete luminaire system, including decorative housing, power supply, mounting, and maintenance provisions. Each luminaire has overall dimensions of approximately 15x60 cm and is comprised of four 15x15 cm phosphorescent OLED panels. With a combined power supply and lamp efficacy of 51 lm/W, the prototype luminaire is about twice as efficient as the market-leading halogen-based systems. In addition, the prototype OLED lighting system snaps into Armstrong's TechZone™ Ceiling System, which is commercially available in the U.S.x

  19. A micrometer-size movable light emitting area in a resonant tunneling light emitting diode

    SciTech Connect (OSTI)

    Pettinari, G., E-mail: giorgio.pettinari@cnr.it [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); National Research Council (CNR), Institute for Photonics and Nanotechnologies (IFN-CNR), Via Cineto Romano 42, 00156 Roma (Italy); Balakrishnan, N.; Makarovsky, O.; Campion, R. P.; Patanè, A. [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)] [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Polimeni, A.; Capizzi, M. [CNISM-Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma (Italy)] [CNISM-Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma (Italy)

    2013-12-09T23:59:59.000Z

    We report on the fabrication of a micrometer-size movable light emitting area in a GaAs/AlAs quantum well resonant tunneling p-i-n diode. The spatial position of the micrometer-size light emitting area shifts linearly with increasing applied bias, up to 30??m for a bias increment of 0.2?V. Also, the simultaneous resonant tunneling injection of both electrons and holes into the quantum well states is achieved at specific positions of the diode, thus resulting in a tenfold increase of the electroluminescence intensity.

  20. Monte Carlo study of efficiency roll-off of phosphorescent organic light-emitting diodes: Evidence for dominant role of triplet-polaron quenching

    SciTech Connect (OSTI)

    Eersel, H. van, E-mail: h.v.eersel@tue.nl; Coehoorn, R. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven (Netherlands); Bobbert, P. A.; Janssen, R. A. J. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

    2014-10-06T23:59:59.000Z

    We present an advanced molecular-scale organic light-emitting diode (OLED) model, integrating both electronic and excitonic processes. Using this model, we can reproduce the measured efficiency roll-off for prototypical phosphorescent OLED stacks based on the green dye tris[2-phenylpyridine]iridium (Ir(ppy){sub 3}) and the red dye octaethylporphine platinum (PtOEP) and study the cause of the roll-off as function of the current density. Both the voltage versus current density characteristics and roll-off agree well with experimental data. Surprisingly, the results of the simulations lead us to conclude that, contrary to what is often assumed, not triplet-triplet annihilation but triplet-polaron quenching is the dominant mechanism causing the roll-off under realistic operating conditions. Simulations for devices with an optimized recombination profile, achieved by carefully tuning the dye trap depth, show that it will be possible to fabricate OLEDs with a drastically reduced roll-off. It is envisaged that J{sub 90}, the current density at which the efficiency is reduced to 90%, can be increased by almost one order of magnitude as compared to the experimental state-of-the-art.

  1. Efficiency enhancement in a light-emitting diode with a two-dimensional surface grating photonic crystal

    E-Print Network [OSTI]

    Baba, Toshihiko

    Efficiency enhancement in a light-emitting diode with a two-dimensional surface grating photonic 21 November 2003 We demonstrate a light-emitting diode exhibiting 1.7­2.7-fold enhancement in light light emitting diode LED , the ef- ficiency is limited to several percents by a low light extrac- tion

  2. Coupled optical and electronic simulations of electrically pumped photonic-crystal-based light-emitting diodes

    E-Print Network [OSTI]

    Dutton, Robert W.

    trade-offs in electrically pumped photonic-crystal-based light-emitting diodes. A finite- toelectronic devices, such as light-emitting diodes LEDs and lasers. It has been suggested that a thin slabCoupled optical and electronic simulations of electrically pumped photonic-crystal-based light-emitting

  3. Genetic algorithms used for the optimization of light-emitting diodes and solar thermal collectors

    E-Print Network [OSTI]

    Mayer, Alexandre

    Genetic algorithms used for the optimization of light-emitting diodes and solar thermal collectors developed for the optimization of light-emitting diodes (LED) and solar thermal collectors. The surface a light-extraction efficiency of only 3.7%). The solar thermal collector we considered consists

  4. Luminescence and Squeezing of a Superconducting Light Emitting Diode

    E-Print Network [OSTI]

    Patrik Hlobil; Peter P. Orth

    2015-05-11T23:59:59.000Z

    We investigate a semiconductor $p$-$n$ junction in contact with superconducting leads that is operated under forward bias as a light-emitting diode. The presence of superconductivity results in a significant increase of the electroluminescence in a certain frequency window. We demonstrate that the tunneling of Cooper pairs induces an additional luminescence peak on resonance. There is a transfer of superconducting to photonic coherence which results in the emission of entangled photon pairs and squeezing of the fluctuations in the quadrature amplitudes of the emitted light. The squeezing angle can be electrically manipulated by changing the relative phase of the order parameters in the superconductors. We finally derive the conditions for lasing in the system and show that the laser threshold is reduced due to superconductivity. This shows how macroscopic coherence of a superconductor can be used to control the properties of light.

  5. Luminescence and Squeezing of a Superconducting Light Emitting Diode

    E-Print Network [OSTI]

    Hlobil, Patrik

    2015-01-01T23:59:59.000Z

    We investigate a semiconductor $p$-$n$ junction in contact with superconducting leads that is operated under forward bias as a light-emitting diode. The presence of superconductivity results in a significant increase of the electroluminescence in a certain frequency window. We demonstrate that the tunneling of Cooper pairs induces an additional luminescence peak on resonance. There is a transfer of superconducting to photonic coherence which results in the emission of entangled photon pairs and squeezing of the fluctuations in the quadrature amplitudes of the emitted light. The squeezing angle can be electrically manipulated by changing the relative phase of the order parameters in the superconductors. We finally derive the conditions for lasing in the system and show that the laser threshold is reduced due to superconductivity. This shows how macroscopic coherence of a superconductor can be used to control the properties of light.

  6. Luminescence and Squeezing of a Superconducting Light Emitting Diode

    E-Print Network [OSTI]

    Patrik Hlobil; Peter P. Orth

    2015-02-17T23:59:59.000Z

    We investigate a semiconductor $p$-$n$ junction in contact with superconducting leads that is operated under forward bias as a light-emitting diode. The presence of superconductivity results in a significant increase of the electroluminescence in a certain frequency window. We demonstrate that the tunneling of Cooper pairs induces an additional luminescence peak on resonance. There is a transfer of superconducting to photonic coherence which results in the emission of entangled photon pairs and squeezing of the fluctuations in the quadrature amplitudes of the emitted light. The squeezing angle can be electrically manipulated by changing the relative phase of the order parameters in the superconductors. We finally derive the conditions for lasing in the system and show that the laser threshold is reduced due to superconductivity. This shows how macroscopic coherence of a superconductor can be used to control the properties of light.

  7. Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

  8. Journal of Light Emitting Diodes Vol 2 N0 1, April 2010 1 Abstract--Semiconductor nanocrystal quantum dots (NQD)

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Journal of Light Emitting Diodes Vol 2 N0 1, April 2010 1 Abstract-- Semiconductor nanocrystal convertors integrated on light-emitting diodes (LEDs). The use of nonradiative energy transfer, also known-LEDs for lighting applications. Index Terms-- Förster resonance energy transfer, light emitting diode, nanocrystal

  9. OLED devices

    DOE Patents [OSTI]

    Sapochak, Linda Susan [Arlington, VA; Burrows, Paul Edward [Kennewick, WA; Bimalchandra, Asanga [Richland, WA

    2011-02-22T23:59:59.000Z

    An OLED device having an emission layer formed of an ambipolar phosphine oxide host material and a dopant, a hole transport layer in electrical communication with an anode, an electron transport layer in communication with a cathode, wherein the HOMO energy of the hole transport layer is substantially the same as the HOMO energy of the ambipolar host in the emission layer, and the LUMO energy of the electron transport layer is substantially the same as the LUMO energy of the ambipolar host in the emission layer.

  10. GaN light-emitting diodes with Archimedean lattice photonic crystals Aurlien David,a

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    GaN light-emitting diodes with Archimedean lattice photonic crystals Aurélien David,a Tetsuo Fujii 2005; published online 16 February 2006 We study GaN-based light emitting diodes incorporating the semiconductor due to its index contrast with air.1­6 Recently, PhCs were used as out- coupling gratings in GaN

  11. Broadband visible light source based on AllnGaN light emitting diodes

    SciTech Connect (OSTI)

    Crawford, Mary H.; Nelson, Jeffrey S.

    2003-12-16T23:59:59.000Z

    A visible light source device is described based on a light emitting diode and a nanocluster-based film. The light emitting diode utilizes a semiconductor quantum well structure between n-type and p-type semiconductor materials on the top surface a substrate such as sapphire. The nanocluster-based film is deposited on the bottom surface of the substrate and can be derived from a solution of MoS.sub.2, MoSe.sub.2, WS.sub.2, and WSe.sub.2 particles of size greater than approximately 2 nm in diameter and less than approximately 15 nm in diameter, having an absorption wavelength greater than approximately 300 nm and less than approximately 650 nm.

  12. Efficiency loss mechanisms in colloidal quantum-dot light-emitting diodes

    E-Print Network [OSTI]

    Shirasaki, Yasuhiro

    2013-01-01T23:59:59.000Z

    Saturated and tunable emission colors make colloidal quantum-dot light-emitting diodes (QD-LEDs) interesting for the next generation of display and lighting technologies. However, there still remain various hurdles to the ...

  13. Light Effects on the Charge Storage in the A-SI:H Pin Diode

    E-Print Network [OSTI]

    Wu, Shu-Hsien

    2013-04-19T23:59:59.000Z

    was verified with a pre-fabricated circuit which is a charge storage readout device. The diode under the long wavelength light illumination condition stored more charges than that under the short wavelength light illumination condition because the former could...

  14. Demonstration of a semipolar (10(1)over-bar(3)over-bar) InGaN/GaN green light emitting diode

    E-Print Network [OSTI]

    2005-01-01T23:59:59.000Z

    InGaN / GaN green light emitting diode R. Sharma, a? P. M.green ??525 nm? light emitting diode ?LED?. The fabricated

  15. Mid-ultraviolet light-emitting diode detects dipicolinic acid.

    SciTech Connect (OSTI)

    Bogart, Katherine Huderle Andersen; Lee, Stephen Roger; Temkin, Henryk (Texas Tech University, Lubbock, TX); Crawford, Mary Hagerott; Dasgupta, Purnendu K. (Texas Tech University, Lubbock, TX); Li, Qingyang (Texas Tech University, Lubbock, TX); Allerman, Andrew Alan; Fischer, Arthur Joseph

    2005-06-01T23:59:59.000Z

    Dipicolinic acid (DPA, 2,6-pyridinedicarboxylic acid) is a substance uniquely present in bacterial spores such as that from anthrax (B. anthracis). It is known that DPA can be detected by the long-lived fluorescence of its terbium chelate; the best limit of detection (LOD) reported thus far using a large benchtop gated fluorescence instrument using a pulsed Xe lamp is 2 nM. We use a novel AlGaN light-emitting diode (LED) fabricated on a sapphire substrate that has peak emission at 291 nm. Although the overlap of the emission band of this LED with the absorption band of Tb-DPA ({lambda}{sub max} doublet: 273, 279 nm) is not ideal, we demonstrate that a compact detector based on this LED and an off-the-shelf gated photodetection module can provide an LOD of 0.4 nM, thus providing a basis for convenient early warning detectors.

  16. Model for Triplet State Engineering in Organic Light Emitting Diodes

    E-Print Network [OSTI]

    Prodhan, Suryoday; Ramasesha, S

    2014-01-01T23:59:59.000Z

    Engineering the position of the lowest triplet state (T1) relative to the first excited singlet state (S1) is of great importance in improving the efficiencies of organic light emitting diodes and organic photovoltaic cells. We have carried out model exact calculations of substituted polyene chains to understand the factors that affect the energy gap between S1 and T1. The factors studied are backbone dimerisation, different donor-acceptor substitutions and twisted geometry. The largest system studied is an eighteen carbon polyene which spans a Hilbert space of about 991 million. We show that for reverse intersystem crossing (RISC) process, the best system involves substituting all carbon sites on one half of the polyene with donors and the other half with acceptors.

  17. Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes

    E-Print Network [OSTI]

    Gilchrist, James F.

    of light emitting diodes Ronald A. Arif, Yik-Khoon Ee, and Nelson Tansu Citation: Appl. Phys. Lett. 91 extraction in GaN-based light emitting diodes Appl. Phys. Lett. 100, 061107 (2012) Electrically driven nanopyramid green light emitting diode Appl. Phys. Lett. 100, 061106 (2012) Ultraviolet electroluminescence

  18. The light-emitting diode (LED) is an fairly new kind of light source found currently in

    E-Print Network [OSTI]

    The light-emitting diode (LED) is an fairly new kind of light source found currently in only a few applications, such as traffic lights and exit signs. As a relatively untested technology, luminaire this technology an ideal replacement for less efficient incandescent light sources, particularly in applications

  19. White Light Emitting Diode Development for General Illumination Applications

    SciTech Connect (OSTI)

    James Ibbetson

    2006-05-01T23:59:59.000Z

    This report contains a summary of technical achievements during a 3-year project aimed at developing the chip and packaging technology necessary to demonstrate efficient, high flux light-emitting diode (LED) arrays using Cree's gallium nitride/silicon carbide (GaN/SiC) LED technology as the starting point. Novel chip designs and fabrication processes are described that led to high power blue LEDs that achieved 310 mW of light output at 350 mA drive current, corresponding to quantum and wall plug efficiencies of 32.5% and 26.5%, respectively. When combined with phosphor, high power white LEDs with luminous output of 67 lumens and efficacy of 57 lumens per watt were also demonstrated. Advances in packaging technology are described that enabled compact, multi-chip white LED lamp modules with 800-1000 lumens output at efficacies of up to 55 lumens per watt. Lamp modules with junction-to-ambient thermal resistance as low as 1.7 C/watt have also been demonstrated.

  20. Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes

    E-Print Network [OSTI]

    Sun, Xiaochen

    We report what we believe to be the first demonstration of direct bandgap electroluminescence (EL) from Ge/Si heterojunction light-emitting diodes (LEDs) at room temperature. In-plane biaxial tensile strain is used to ...

  1. A strategy for the use of light emitting diodes by autonomous underwater vehicles

    E-Print Network [OSTI]

    Curran, Joseph R. (Joseph Robinson)

    2004-01-01T23:59:59.000Z

    Light Emitting Diode (LED) technology has advanced dramatically in a few short years. An expensive and difficult to manufacture LED array containing nearly 100 individual LEDs and measuring at least 5 cm² can now be replaced ...

  2. Colloidal semiconductor nanocrystals as nanoscale emissive probes in light emitting diodes and cell biology

    E-Print Network [OSTI]

    Huang, Hao, Ph. D. Massachusetts Institute of Technology

    2008-01-01T23:59:59.000Z

    This thesis employs colloidal semiconductor nanocrystals (NCs) as nanoscale emissive probes to investigate the physics of light emitting diodes (LEDs), as well as to unveil properties of cells that conventional imaging ...

  3. OLED Stakeholder Meeting Report | Department of Energy

    Energy Savers [EERE]

    Report OLED Stakeholder Meeting Report.pdf More Documents & Publications 2015 Project Portfolio 2015 SSL R&D WORKSHOP PRESENTATIONS - DAY 2 Solid-State Lighting R&D...

  4. Ultrastrong light-matter coupling in electrically doped microcavity organic light emitting diodes

    SciTech Connect (OSTI)

    Mazzeo, M., E-mail: marco.mazzeo@unisalento.it [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Genco, A. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); Gambino, S. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy); Ballarini, D.; Mangione, F.; Sanvitto, D. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Di Stefano, O.; Patanè, S.; Savasta, S. [Dipartimento di Fisica e Scienze della Terra, Università di Messina, Viale F. Stagno d'Alcontres 31, 98166 Messina (Italy); Gigli, G. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy)

    2014-06-09T23:59:59.000Z

    The coupling of the electromagnetic field with an electronic transition gives rise, for strong enough light-matter interactions, to hybrid states called exciton-polaritons. When the energy exchanged between light and matter becomes a significant fraction of the material transition energy an extreme optical regime called ultrastrong coupling (USC) is achieved. We report a microcavity embedded p-i-n monolithic organic light emitting diode working in USC, employing a thin film of squaraine dye as active layer. A normalized coupling ratio of 30% has been achieved at room temperature. These USC devices exhibit a dispersion-less angle-resolved electroluminescence that can be exploited for the realization of innovative optoelectronic devices. Our results may open the way towards electrically pumped polariton lasers.

  5. Spontaneous fluctuations of transition dipole moment orientation in OLED triplet emitters

    E-Print Network [OSTI]

    Steiner, Florian; Vogelsang, Jan; Lupton, John M

    2015-01-01T23:59:59.000Z

    The efficiency of an organic light-emitting diode (OLED) depends on the microscopic orientation of transition dipole moments of the molecular emitters. The most effective materials used for light generation have threefold symmetry, which prohibit a priori determination of dipole orientation due to the degeneracy of the fundamental transition. Single-molecule spectroscopy reveals that the model triplet emitter tris(2-phenylisoquinoline)iridium(III) (Ir(piq)3) does not behave as a linear dipole, radiating with lower polarization anisotropy than expected. Spontaneous symmetry breaking occurs in the excited state, leading to a random selection of one of the three ligands to form a charge transfer state with the metal. This non-deterministic localization is revealed in switching of the degree of linear polarization of phosphorescence. Polarization scrambling likely raises out-coupling efficiency and should be taken into account when deriving molecular orientation of the guest emitter within the OLED host from ense...

  6. OLED Manufacture Challenge: Strategy for Cost Reduction and Yield...

    Energy Savers [EERE]

    activity in China will help to leverage the fund for potential market of OLED lighting: Eye-shielding Lamps for Children Shadowless Surgical Operating Lamp New Construction Design...

  7. Novel Structured LED and OLED Devices - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to achieve a semiconductor island structure of high crystalline quality for covering the substrate. Similarly, light extraction, particularly for OLEDs, remains an obstacle to...

  8. Electro-luminescent cooling: light emitting diodes above unity efficiency

    E-Print Network [OSTI]

    Santhanam, Parthiban

    Experimental demonstration of net electro-luminescent cooling in a diode, or equivalently electroluminescence with wall-plug efficiency greater than unity, had eluded direct observation for more than five decades. We review ...

  9. Light-emitting diode spherical packages: an equation for the light transmission efficiency

    E-Print Network [OSTI]

    Moreno, Ivan; Avendano-Alejo, Maximino; 10.1364/AO.49.000012

    2011-01-01T23:59:59.000Z

    Virtually all light-emitting diodes (LEDs) are encapsulated with a transparent epoxy or silicone-gel. In this paper we analyze the optical efficiency of spherical encapsulants. We develop a quasi-radiometric equation for the light transmission efficiency, which incorporates some ideas of Monte-Carlo ray tracing into the context of radiometry. The approach includes the extended source nature of the LED chip, and the chip radiance distribution. The equation is an explicit function of the size and the refractive index of the package, and also of several chip parameters such as shape, size, radiance, and location inside the package. To illustrate the use of this equation, we analyze several packaging configurations of practical interest; for example, a hemispherical dome with multiple chips, a flat encapsulation as a special case of the spherical package, and approximate calculations of an encapsulant with a photonic crystal LED or with a photonic quasi crystal LED. These calculations are compared with Monte-Carl...

  10. Organic Light-Emitting Diodes and Organic Light-emitting Electrochemical Cells Based on Silole-Fluorene Derivatives

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    and to stop the well known spectral shift degradation occurring in fluorene based materials. In this paper we1 Organic Light-Emitting Diodes and Organic Light-emitting Electrochemical Cells Based on Silole-Fluorene, copolymerization of siloles with fluorene was aimed at improving electron injection into the polymer layer and so

  11. Effects of metallic absorption and the corrugated layer on the optical extraction efficiency of organic light-emitting diodes

    E-Print Network [OSTI]

    Lee, Baek-Woon

    2011-01-01T23:59:59.000Z

    The absorption of a metallic cathode in OLEDs is analyzed by using FDTD calculation. As the light propagates parallel to the layer, the intensity of Ez polarization decreases rapidly. The intensity at 2.0 um from the dipole is less than a quarter of that at 0.5 um. The strong absorption by a cathode can be a critical factor when considering the increase of optical extraction by means of bending the optical layers. The calculation indicates that the corrugation of layers helps the guided light escape the guiding layer, but also increases the absorption into a metallic cathode. The final optical output power of the corrugated OLED can be smaller than that of the flat OLED. On the contrary, the corrugated structure with a non-absorptive cathode increases the optical extraction by nearly two times.

  12. Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

    E-Print Network [OSTI]

    Gilchrist, James F.

    Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes Keywords: III-Nitride InGaN QWs Light-emitting diodes Efficiency-droop a b s t r a c t Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well (QW) based light-emitting diodes

  13. Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Keywords: GaInN/GaN Light emitting diode temperature Micro-Raman Photoluminescence Electroluminescence well light emitting diode (LED) dies is analyzed by micro-Raman, photoluminescence, cathodoluminescenceJunction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting

  14. Thickness-dependent changes in the optical properties of PPV-and PF-based polymer light emitting diodes

    E-Print Network [OSTI]

    Carter, Sue

    the thickness-dependent optical properties of single layer polymer light emitting diodes for two materials, poly the electronic and optical properties of these materials in light emitting diode LED structures.2 OurThickness-dependent changes in the optical properties of PPV- and PF-based polymer light emitting

  15. Method and apparatus for improving the performance of light emitting diodes

    DOE Patents [OSTI]

    Lowery, Christopher H. (Fremont, CA); McElfresh, David K. (Union City, CA); Burchet, Steve (Cedar Crest, NM); Adolf, Douglas B. (Albuquerque, NM); Martin, James (Tijeras, NM)

    1996-01-01T23:59:59.000Z

    A method for increasing the resistance of a light emitting diode and other semiconductor devices to extremes of temperature is disclosed. During the manufacture of the light emitting diode, a liquid coating is applied to the light emitting die after the die has been placed in its lead frame. After the liquid coating has been placed on the die and its lead frames, a thermosetting encapsulant material is placed over the coating. The operation that cures the thermosetting material leaves the coating liquid intact. As the die and the encapsulant expand and contract at different rates with respect to changes in temperature, and as in known light emitting diodes the encapsulating material adheres to the die and lead frames, this liquid coating reduces the stresses that these different rates of expansion and contraction normally cause by eliminating the adherence of the encapsulating material to the die and frame.

  16. New red phosphor for near-ultraviolet light-emitting diodes with high color-purity

    SciTech Connect (OSTI)

    Wang, Zhengliang, E-mail: wzhl_ww@yahoo.com.cn [School of Chemistry and Biotechnology, Yunnan Nationalities University, Kunming, Yunnan 650031 (China)] [School of Chemistry and Biotechnology, Yunnan Nationalities University, Kunming, Yunnan 650031 (China); He, Pei; Wang, Rui [School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China)] [School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China); Zhao, Jishou [School of Chemistry and Biotechnology, Yunnan Nationalities University, Kunming, Yunnan 650031 (China)] [School of Chemistry and Biotechnology, Yunnan Nationalities University, Kunming, Yunnan 650031 (China); Gong, Menglian [School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China)] [School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China)

    2010-02-15T23:59:59.000Z

    New red phosphors, Na{sub 5}Eu(MoO{sub 4}){sub 4} doped with boron oxide were prepared by the solid-state reaction. Their structure and photo-luminescent properties were investigated. With the introduction of boron oxide, the red emission intensity of the phosphors under 395 nm excitation is strengthened, with high color-purity (x = 0.673, y = 0.327). The single red light-emitting diode was obtained by combining InGaN chip with the red phosphor, bright red light can be observed by naked eyes from the red light-emitting diodes under a forward bias of 20 mA.

  17. Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays

    DOE Patents [OSTI]

    Rogers, John A; Nuzzo, Ralph; Kim, Hoon-sik; Brueckner, Eric; Park, Sang Il; Kim, Rak Hwan

    2014-10-21T23:59:59.000Z

    Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.

  18. NANOSTRUCTURED HIGH PERFORMANCE ULTRAVIOLET AND BLUE LIGHT EMITTING DIODES FOR SOLID STATE LIGHTING

    SciTech Connect (OSTI)

    Arto V. Nurmikko; Jung Han

    2004-10-01T23:59:59.000Z

    We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and near ultraviolet for Solid State Lighting applications. Accomplishments in the first 12 month contract period include (1) new means of synthesizing zero- and one-dimensional GaN nanostructures, (2) establishment of the building blocks for making GaN-based microcavity devices, and (3) demonstration of top-down approach to nano-scale photonic devices for enhanced spontaneous emission and light extraction. These include a demonstration of eight-fold enhancement of the external emission efficiency in new InGaN QW photonic crystal structures. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

  19. Tunnel junction multiple wavelength light-emitting diodes

    DOE Patents [OSTI]

    Olson, Jerry M. (Lakewood, CO); Kurtz, Sarah R. (Golden, CO)

    1992-01-01T23:59:59.000Z

    A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect.

  20. Tunnel junction multiple wavelength light-emitting diodes

    DOE Patents [OSTI]

    Olson, J.M.; Kurtz, S.R.

    1992-11-24T23:59:59.000Z

    A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect. 5 figs.

  1. Nanostructured High Performance Ultraviolet and Blue Light Emitting Diodes for Solid State Lighting

    SciTech Connect (OSTI)

    Arto V. Nurmikko; Jung Han

    2005-09-30T23:59:59.000Z

    We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and near ultraviolet for Solid State Lighting applications. Accomplishments in the second 12 month contract period include (i) new means of synthesizing AlGaN and InN quantum dots by droplet heteroepitaxy, (ii) synthesis of AlGaInN nanowires as building blocks for GaN-based microcavity devices, (iii) progress towards direct epitaxial alignment of the dense arrays of nanowires, (iv) observation and measurements of stimulated emission in dense InGaN nanopost arrays, (v) design and fabrication of InGaN photonic crystal emitters, and (vi) observation and measurements of enhanced fluorescence from coupled quantum dot and plasmonic nanostructures. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

  2. Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520525 nm employing graded growth-temperature profile

    E-Print Network [OSTI]

    Gilchrist, James F.

    Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520­525 nm employing current spreading and light extraction in GaN-based light emitting diodes Appl. Phys. Lett. 100, 061107 (2012) Electrically driven nanopyramid green light emitting diode Appl. Phys. Lett. 100, 061106 (2012

  3. Conference 5739, SPIE International Symposium Integrated Optoelectronic Devices, 22-27 Jan 2005, San Jose, CA Development of high power green light emitting diode dies in

    E-Print Network [OSTI]

    Wetzel, Christian M.

    , San Jose, CA Development of high power green light emitting diode dies in piezoelectric Ga in green light emitting diodes is one of the big challenges towards all-solid- state lighting. The prime,3], and commercialization [4,5] of high brightness light emitting diodes LEDs has led to a 1.82 Billion-$/year world market

  4. Spectrally narrowed leaky waveguide edge emission and transient electrluminescent dynamics of OLEDs

    SciTech Connect (OSTI)

    Zhengqing, Gan

    2010-05-16T23:59:59.000Z

    In summary, there are two major research works presented in this dissertation. The first research project (Chapter 4) is spectrally narrowed edge emission from Organic Light Emitting Diodes. The second project (Chapter 5) is about transient electroluminescent dynamics in OLEDs. Chapter 1 is a general introduction of OLEDs. Chapter 2 is a general introduction of organic semiconductor lasers. Chapter 3 is a description of the thermal evaporation method for OLED fabrication. The detail of the first project was presented in Chapter 4. Extremely narrowed spectrum was observed from the edge of OLED devices. A threshold thickness exists, above which the spectrum is narrow, and below which the spectrum is broad. The FWHM of spectrum depends on the material of the organic thin films, the thickness of the organic layers, and length of the OLED device. A superlinear relationship between the output intensity of the edge emission and the length of the device was observed, which is probably due to the misalignment of the device edge and the optical fiber detector. The original motivation of this research is for organic semiconductor laser that hasn't been realized due to the extremely high photon absorption in OLED devices. Although we didn't succeed in fabricating an electrically pumped organic laser diode, we made a comprehensive research in edge emission of OLEDs which provides valuable results in understanding light distribution and propagation in OLED devices. Chapter 5 focuses on the second project. A strong spike was observed at the falling edge of a pulse, and a long tail followed. The spike was due to the recombination of correlated charge pair (CCP) created by trapped carriers in guest molecules of the recombination zone. When the bias was turned off, along with the decreasing of electric field in the device, the electric field induced quenching decreases and the recombination rate of the CCP increases which result in the spike. This research project provides a profound understanding of the EL dynamics of OLED, and the theoretical model can fit and explain the experiment data quite well. For the edge emission, we focused on the spectrum and the relative intensity of the edge emission. In the future, more research can be done on the comparison of the intensity between the total edge emission and the surface emission which will give us a sense what fraction of light was trapped in the device. Micro structures can be integrated into the OLED such as DFB and DBR, the character of edge emission should be very interesting. For the transient spike, the CCP model can give a good explanation. But in the model, the effect of the electric field change is not included, because from the start point (t=0), we assume the mobility of carriers is a constant. If we consider the details of the change of the electric field, then when turning of the bias, the decrease of the electric field results in decrease of the carrier mobility and the dissociation rate. If we can add the electric field effect into the model, the whole theory will be more convincing.

  5. Yellow-green strained-InGaP quantum-well epitaxial-transparent-substrate light emitting diodes

    E-Print Network [OSTI]

    Yellow-green strained-InGaP quantum-well epitaxial-transparent-substrate light emitting diodes L March 2004 We present a strained-InGaP quantum-well light emitting diode LED operating in the green that InGaP alloys in this composition range are not lattice-matched to any traditional substrate material

  6. Solid-state lighting technology perspective.

    SciTech Connect (OSTI)

    Tsao, Jeffrey Yeenien; Coltrin, Michael Elliott

    2006-08-01T23:59:59.000Z

    Solid-State Lighting (SSL) uses inorganic light-emitting diodes (LEDs) and organic light-emitting diodes (OLEDs) to convert electricity into light for illumination. SSL has the potential for enormous energy savings and accompanying environmental benefits if its promise of 50% (or greater) energy efficiencies can be achieved. This report provides a broad summary of the technologies that underlie SSL. The applications for SSL and potential impact on U.S. and world-wide energy consumption, and impact on the human visual experience are discussed. The properties of visible light and different technical metrics to characterize its properties are summarized. The many factors contributing to the capital and operating costs for SSL and traditional lighting sources (incandescent, fluorescent, and high-intensity discharge lamps) are discussed, with extrapolations for future SSL goals. The technologies underlying LEDs and OLEDs are also described, including current and possible alternative future technologies and some of the present limitations.

  7. Commercialization of Quantum Dot White Light Emitting Diode technology

    E-Print Network [OSTI]

    Zhao, Xinyue, M. Eng. Massachusetts Institute of Technology

    2006-01-01T23:59:59.000Z

    It is well known that the use of high-brightness LEDs for illumination has the potential to substitute conventional lighting and revolutionize the lighting industry over the next 10 to 20 years. However, successful penetration ...

  8. Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    GaN light-emitting diodes: Efficiency-limiting processes at high injection J. Vac. Sci. Technol. A 31

  9. ISSUANCE 2015-06-25: Energy Conservation Program: Test Procedures for Integrated Light-Emitting Diode Lamps, Supplemental Notice of Proposed Rulemaking

    Broader source: Energy.gov [DOE]

    Energy Conservation Program: Test Procedures for Integrated Light-Emitting Diode Lamps, Supplemental Notice of Proposed Rulemaking

  10. Warm-white light-emitting diodes integrated with colloidal quantum dots for high luminous

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Warm-white light-emitting diodes integrated with colloidal quantum dots for high luminous efficacy NQD-LED design with both high luminous efficacy of optical radiation and CRI is presented to have luminous efficacy of optical ra- diation (LER), which is challenging using conventional phosphors

  11. Diffusion injected multi-quantum well light-emitting diode structure

    SciTech Connect (OSTI)

    Riuttanen, L., E-mail: lauri.riuttanen@aalto.fi; Nykänen, H.; Svensk, O.; Suihkonen, S.; Sopanen, M. [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto (Finland); Kivisaari, P.; Oksanen, J.; Tulkki, J. [Department of Biomedical Engineering and Computational Science, Aalto University, P.O. Box 12200, FI-00076 Aalto (Finland)

    2014-02-24T23:59:59.000Z

    The attention towards light-emitting diode (LED) structures based on nanowires, surface plasmon coupled LEDs, and large-area high-power LEDs has been increasing for their potential in increasing the optical output power and efficiency of LEDs. In this work we demonstrate an alternative way to inject charge carriers into the active region of an LED, which is based on completely different current transport mechanism compared to conventional current injection approaches. The demonstrated structure is expected to help overcoming some of the challenges related to current injection with conventional structures. A functioning III-nitride diffusion injected light-emitting diode structure, in which the light-emitting active region is located outside the pn-junction, is realized and characterized. In this device design, the charge carriers are injected into the active region by bipolar diffusion, which could also be utilized to excite otherwise challenging to realize light-emitting structures.

  12. C. Wetzel et al MRS Internet J. Nitride Semicond. Res. 10, 2 (2005) 1 Development of High Power Green Light Emitting Diode Chips

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2005-01-01T23:59:59.000Z

    Power Green Light Emitting Diode Chips C. Wetzel and T. Detchprohm Future Chips Constellation Abstract The development of high emission power green light emitting diodes chips using GaInN/GaN multi production-scale implementation of this green LED die process. Keywords: nitrides, light emitting diode

  13. InP-Based Oxide-Confined 16 p.m Microcavity Light Emitting Diodes Weidong Zhou, Omar Qasaimeh, and Pallab Bhattacharya

    E-Print Network [OSTI]

    Zhou, Weidong

    InP-Based Oxide-Confined 16 p.m Microcavity Light Emitting Diodes Weidong Zhou, Omar Qasaimeh light emitting diodes (MCLEDs) have been designed, fabricated and characterized. Oxide- confined MCLEDs region emission peak and cavity resonance peak. Key words: Microcavity light emitting diode (MCLED), wet

  14. Microcavity enhanced vertical-cavity light-emitting diodes U. Keller, G. R. Jacobovitz-Veselka, J. E. Cunningham, W. Y. Jan, B. Tell,

    E-Print Network [OSTI]

    Keller, Ursula

    Microcavity enhanced vertical-cavity light-emitting diodes U. Keller, G. R. Jacobovitz-Veselka, J-cavity light-emitting diode (LED) by continuously changing the microcavity resonance with respect for optical interconnects seems to be the light emitting diode (LED), or better yet, the microcavity en

  15. Photoionization of optically trapped ultracold atoms with a high-power light-emitting diode

    SciTech Connect (OSTI)

    Goetz, Simone; Hoeltkemeier, Bastian; Amthor, Thomas; Weidemueller, Matthias [Physikalisches Institut, Universitaet Heidelberg, Im Neuenheimer Feld 226, 69120 Heidelberg (Germany)

    2013-04-15T23:59:59.000Z

    Photoionization of laser-cooled atoms using short pulses of a high-power light-emitting diode (LED) is demonstrated. Light pulses as short as 30 ns have been realized with the simple LED driver circuit. We measure the ionization cross section of {sup 85}Rb atoms in the first excited state, and show how this technique can be used for calibrating efficiencies of ion detector assemblies.

  16. My Favorite OLED Panel

    Energy Savers [EERE]

    My Favorite OLED Panel Basar Erdener Sun and Snow Photo Courtesy 2009-2015 Kvikken 2 Sizable 3 Sizable Photo Courtesy Printmeneer on Etsy 4 5 Shapeable Photo Courtesy Dia...

  17. Demonstration Assessment of Light-Emitting Diode (LED) Parking Lot Lighting in Leavenworth, KS

    SciTech Connect (OSTI)

    Myer, Michael; Kinzey, Bruce R.; Curry, Ku'uipo

    2011-05-06T23:59:59.000Z

    This report describes the process and results of a demonstration of solid-state lighting (SSL) technology in a commercial parking lot lighting application, under the U.S. Department of Energy (DOE) Solid-State Lighting Technology GATEWAY Demonstration Program. The parking lot is for customers and employees of a Walmart Supercenter in Leavenworth, Kansas and this installation represents the first use of the LED Parking Lot Performance Specification developed by the DOE’s Commercial Building Energy Alliance. The application is a parking lot covering more than a half million square feet, lighted primarily by light-emitting diodes (LEDs). Metal halide wall packs were installed along the building facade. This site is new construction, so the installed baseline(s) were hypothetical designs. It was acknowledged early on that deviating from Walmart’s typical design would reduce the illuminance on the site. Walmart primarily uses 1000W pulse-start metal halide (PMH) lamps. In order to provide a comparison between both typical design and a design using conventional luminaires providing a lower illuminance, a 400W PMH design was also considered. As mentioned already, the illuminance would be reduced by shifting from the PMH system to the LED system. The Illuminating Engineering Society of North America (IES) provides recommended minimum illuminance values for parking lots. All designs exceeded the recommended illuminance values in IES RP-20, some by a wider margin than others. Energy savings from installing the LED system compared to the different PMH systems varied. Compared to the 1000W PMH system, the LED system would save 63 percent of the energy. However, this corresponds to a 68 percent reduction in illuminance as well. In comparison to the 400W PMH system, the LED system would save 44 percent of the energy and provide similar minimum illuminance values at the time of relamping. The LED system cost more than either of the PMH systems when comparing initial costs. However, when the life-cycle costs from energy and maintenance were factored into the scenario, the LED system had lower costs at the end of a 10-year analysis period. The LED system had a 6.1 year payback compared to the 1000W PMH system and a 7.5 year payback versus the 400W PMH system. The costs reflect high initial cost for the LED luminaire, plus more luminaires and (subsequently) more poles for the LED system. The other major issue affecting cost effectiveness was that Leavenworth, Kansas has very low electricity costs. The melded rate for this site was $0.056 per kWh for electricity. However, if the national electricity rate of $0.1022/kWh was used the payback would change to between four and five years for the LED system. This demonstration met the GATEWAY requirements of saving energy, matching or improving illumination, and being cost effective. The project also demonstrated that the Commercial Building Energy Alliance (CBEA) specification works in practice. Walmart appreciated having an entire site lighted by LEDs to gain more experience with the technology. Walmart is reviewing the results of the demonstration as they consider their entire real estate portfolio.

  18. Synthesis and optical properties of cadmium selenide quantum dots for white light-emitting diode application

    SciTech Connect (OSTI)

    Xu, Xianmei; Wang, Yilin; Gule, Teri; Luo, Qiang [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Zhou, Liya, E-mail: zhouliyatf@163.com [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Gong, Fuzhong [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China)

    2013-03-15T23:59:59.000Z

    Highlights: ? Stable CdSe QDs were synthesized by the one-step and two-level process respectively. ? The fabricated white LEDs show good white balance. ? CdSe QDs present well green to yellow band luminescence. ? CdSe QDs displayed a broad excitation band. - Abstract: Yellow light-emitting cadmium selenide quantum dots were synthesized using one-step and two-step methods in an aqueous medium. The structural luminescent properties of these quantum dots were investigated. The obtained cadmium selenide quantum dots displayed a broad excitation band suitable for blue or near-ultraviolet light-emitting diode applications. White light-emitting diodes were fabricated by coating the cadmium selenide samples onto a 460 nm-emitting indium gallium nitrite chip. Both samples exhibited good white balance. Under a 20 mA working current, the white light-emitting diode fabricated via the one-step and two-step methods showed Commission Internationale de l’Éclairage coordinates at (0.27, 0.23) and (0.27, 0.33), respectively, and a color rendering index equal to 41 and 37, respectively. The one-step approach was simpler, greener, and more effective than the two-step approach. The one-step approach can be enhanced by combining cadmium selenide quantum dots with proper phosphors.

  19. Light-emitting diodes (LEDs), with high efficiency, dimmabil-ity, long life, and directional light output, could be the ideal

    E-Print Network [OSTI]

    The Issue Light-emitting diodes (LEDs), with high efficiency, dimmabil- ity, long life, and directional light output, could be the ideal light source for the common recessed-can downlight. How- ever, many existing LED downlight products fail to live up to expectations, providing poor light distribution

  20. Bright Light-Emitting Diodes based on Organometal Halide Perovskite

    E-Print Network [OSTI]

    Tan, Zhi-Kuang; Moghaddam, Reza Saberi; Lai, May Ling; Docampo, Pablo; Higler, Ruben; Deschler, Felix; Price, Michael; Sadhanala, Aditya; Pazos, Luis M.; Credgington, Dan; Hanusch, Fabian; Bein, Thomas; Snaith, Henry J.; Friend, Richard H.

    2014-08-03T23:59:59.000Z

    a Keithley 2400 Source Measure Unit (SMU). Photon flux was measured simultaneously using a calibrated silicon photodiode centered over the light-emitting pixel. Radiance in W sr-1 m-2 and luminance in cd m-2 10 were calculated based...

  1. Improved Cognitive Function After Transcranial, Light-Emitting Diode Treatments in Chronic, Traumatic Brain Injury: Two Case Reports

    E-Print Network [OSTI]

    Naeser, Margaret A.

    Objective: Two chronic, traumatic brain injury (TBI) cases, where cognition improved following treatment with red and near-infrared light-emitting diodes (LEDs), applied transcranially to forehead and scalp areas, are ...

  2. Amber light-emitting diode comprising a group III-nitride nanowire active region

    DOE Patents [OSTI]

    Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

    2014-07-22T23:59:59.000Z

    A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

  3. Epitaxial Growth of InGaN Nanowire Arrays for Light Emitting Diodes

    E-Print Network [OSTI]

    Yang, Peidong

    from the substrate. Ni/Au (20 nm / 20 nm) contacts were deposited on the p-GaN substrate in a geometryS1 Epitaxial Growth of InGaN Nanowire Arrays for Light Emitting Diodes Christopher Hahn, Zhaoyu. The straight line represents the Vegard's law correlation between GaN (c = 5.188 Å) and InN (c = 5.709 Å). (b

  4. DARPA Soldier Self Care: Rapid Healing of Laser Eye Injuries with Light Emitting Diode Technology

    E-Print Network [OSTI]

    Harry T. Whelan; Margaret T. T. Wong-riley, Ph.D.; Janis T. Eells, Ph.D.; James N. Verhoeve, Ph.D.; Rina Das, Ph.D.; Marti Jett, Ph.D.

    RGC, retinal ganglion cell; TTX, tetrodotoxin. Photobiomodulation by light in the red to near infrared range (630-1000 nm) using low energy lasers or lightemitting diode (LED) arrays has been shown to accelerate wound healing, improve recovery from ischemic injury and attenuate degeneration in the injured optic nerve. At the cellular level, photoirradiation at low fluences can generate significant biological effects including cellular proliferation and the release of growth factors from cells. Mitochondrial cytochromes have been postulated as photoacceptors for red to near-infrared (NIR) light energy and reactive oxygen species or mitochondrial redox changes have been advanced as potential mediators of the biological effects of this light. We hypothesize that the therapeutic effects of red to near infrared light result, in part, from intracellular signaling mechanisms triggered by the interaction of NIR light with the mitochondrial photoacceptor

  5. Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires

    SciTech Connect (OSTI)

    Huh, Chul, E-mail: chuh@etri.re.kr; Kim, Bong Kyu; Ahn, Chang-Geun; Kim, Sang-Hyeob [IT Convergence Technology Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-350 (Korea, Republic of); Choi, Chel-Jong [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2014-07-21T23:59:59.000Z

    We report an enhancement in light emission and electrical efficiencies of a Si nanocrystal (NC) light-emitting diode (LED) by employing indium tin oxide (ITO) nanowires (NWs). The formed ITO NWs (diameter?light output power and wall-plug efficiency from the Si NC LED were enhanced by 45% and 38%, respectively. This was originated from an enhancement in the escape probability of the photons generated in the Si NCs due to multiple scatterings at the surface of ITO NWs acting as a light waveguide. We show here that the use of the ITO NWs can be very useful for realizing a highly efficient Si NC LED.

  6. P-doping-free III-nitride high electron mobility light-emitting diodes and transistors

    SciTech Connect (OSTI)

    Li, Baikui; Tang, Xi; Chen, Kevin J., E-mail: eekjchen@ust.hk [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong); Wang, Jiannong [Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2014-07-21T23:59:59.000Z

    We report that a simple metal-AlGaN/GaN Schottky diode is capable of producing GaN band-edge ultraviolet emission at 3.4?eV at a small forward bias larger than ?2?V at room temperature. Based on the surface states distribution of AlGaN, a mature impact-ionization-induced Fermi-level de-pinning model is proposed to explain the underlying mechanism of the electroluminescence (EL) process. By experimenting with different Schottky metals, Ni/Au and Pt/Au, we demonstrated that this EL phenomenon is a “universal” property of metal-AlGaN/GaN Schottky diodes. Since this light-emitting Schottky diode shares the same active structure and fabrication processes as the AlGaN/GaN high electron mobility transistors, straight-forward and seamless integration of photonic and electronic functional devices has been demonstrated on doping-free III-nitride heterostructures. Using a semitransparent Schottky drain electrode, an AlGaN/GaN high electron mobility light-emitting transistor is demonstrated.

  7. Organic light-emitting diodes using open-shell molecule as emitter: the emission from doublet

    E-Print Network [OSTI]

    Peng, Qiming; Chen, Youchun; He, Chuanyou; Obolda, Ablikim; Li, Feng

    2014-01-01T23:59:59.000Z

    We fabricate OLEDs using a stable neutral {\\pi} radical, BDPA, as the emitter. There is only one electron in the singly occupied molecular orbital (SOMO) of this open-shell molecule. This feature makes the excited state of open-shell molecules be neither singlet nor triplet, but doublet. The key issue of how to harvest the triplet energy in an OLED is thus bypassed, due to the radiative decay of doublet is totally spin allowed. In the BDPA-based OLED, the emission was confirmed to be from the electronic transition from LUMO to SOMO, via the frontier molecular orbital analysis combined with the spectroscopy measurements. The maximum luminance of the OLEDs is 4879 cd/m2 which is comparable to the first reported Fluorescence-, Phosphorecence- and TADF-based OLEDs.

  8. Amorphous silicon as electron transport layer for colloidal semiconductor nanocrystals light emitting diode

    SciTech Connect (OSTI)

    Song Tao; Shen Xiaojuan; Sun Baoquan [Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Functional Nano and Soft Materials Laboratory (FUNSOM), Soochow University, 199 Ren'ai Road, Suzhou 215123 (China); Zhang Fute [Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Functional Nano and Soft Materials Laboratory (FUNSOM), Soochow University, 199 Ren'ai Road, Suzhou 215123 (China); Key Laboratory of Organic Synthesis of Jiangsu Province, School of Chemistry and Chemical Engineering, Soochow University, Suzhou 215123 (China); Zhang Xiaohong [Nano-Organic Photoelectronic Laboratory and Laboratory of Organic Optoelectronic Functional Materials and Molecular Engineering, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Zhu Xiulin [Key Laboratory of Organic Synthesis of Jiangsu Province, School of Chemistry and Chemical Engineering, Soochow University, Suzhou 215123 (China)

    2009-12-07T23:59:59.000Z

    We demonstrate the fabrication of light-emitting diodes (LEDs) made from all-inorganic colloidal semiconducting nanocrystals (NCs). The diode utilizes a sandwich structure formed by placing CdSe/CdS NCs between two layers of Si and Ag{sub x}O, which act as electron- and hole-transporting materials, respectively. The photoluminescence properties of NCs are rendered less dependent upon surface chemistry and chemical environment by growing a thick CdS shell. It also enhances stability of the NCs during the process of magnetron sputtering for silicon deposition. The resulting LED device exhibits a low turn-on voltage of 2.5 V and the maximum external quantum efficiency of nearly 0.08%.

  9. Low Voltage White Phosphorescent OLED Achievements

    Broader source: Energy.gov [DOE]

    Universal Display Corporation (UDC) and its research partners at Princeton University and the University of Southern California have succeeded in developing a white phosphorescent OLED (PHOLED™) that achieved a record efficiency of 20 lumens per watt. This achievement is the result of the team's collaborative efforts to increase the efficiency of PHOLED lighting by focusing on two critical factors: lowering the drive voltages and increasing the amount of light extracted.

  10. Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices

    SciTech Connect (OSTI)

    Patibandla, Nag; Agrawal, Vivek

    2012-12-01T23:59:59.000Z

    Over the course of this program, Applied Materials, Inc., with generous support from the United States Department of Energy, developed a world-class three chamber III-Nitride epi cluster tool for low-cost, high volume GaN growth for the solid state lighting industry. One of the major achievements of the program was to design, build, and demonstrate the world’s largest wafer capacity HVPE chamber suitable for repeatable high volume III-Nitride template and device manufacturing. Applied Materials’ experience in developing deposition chambers for the silicon chip industry over many decades resulted in many orders of magnitude reductions in the price of transistors. That experience and understanding was used in developing this GaN epi deposition tool. The multi-chamber approach, which continues to be unique in the ability of the each chamber to deposit a section of the full device structure, unlike other cluster tools, allows for extreme flexibility in the manufacturing process. This robust architecture is suitable for not just the LED industry, but GaN power devices as well, both horizontal and vertical designs. The new HVPE technology developed allows GaN to be grown at a rate unheard of with MOCVD, up to 20x the typical MOCVD rates of 3{micro}m per hour, with bulk crystal quality better than the highest-quality commercial GaN films grown by MOCVD at a much cheaper overall cost. This is a unique development as the HVPE process has been known for decades, but never successfully commercially developed for high volume manufacturing. This research shows the potential of the first commercial-grade HVPE chamber, an elusive goal for III-V researchers and those wanting to capitalize on the promise of HVPE. Additionally, in the course of this program, Applied Materials built two MOCVD chambers, in addition to the HVPE chamber, and a robot that moves wafers between them. The MOCVD chambers demonstrated industry-leading wavelength yield for GaN based LED wafers and industry-leading uptime enabled in part by a novel in-situ cleaning process developed in this program.

  11. Aerospace Applications for OLED Lighting

    Energy Savers [EERE]

    2015 Boeing. All rights reserved. Export Controlled ECCN: 9E991 NLR Aerospace economics drive long development cycles and even longer product lifecycles * Development of a...

  12. Journal of Light Emitting Diodes Vol 2 N0 1, April 2010 1 Abstract--In metal organic vapor phase epitaxy we developed

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Journal of Light Emitting Diodes Vol 2 N0 1, April 2010 1 Abstract-- In metal organic vapor phase epitaxy we developed GaInN/GaN quantum well material suitable for 500 ­ 580 nm light emitting diodes at longer wavelengths. Index Terms-- a-plane GaN, GaInN, Green light emitting diode, m-plane GaN I

  13. Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    the last quantum barrier in InGaN/GaN light-emitting diodes Zabu Kyaw, Zi-Hui Zhang, Wei Liu, Swee Tiam Tan injection and efficiency droop in InGaN/GaN light-emitting diodes with step-stage multiple- quantum distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers Appl. Phys. Lett. 102

  14. Vehicle Traffic Control Signal Heads— Light Emitting Diode Circular Signal Supplement (VTCSH-LED). This replaced the so-called Interim LED Purchase Specifications,

    E-Print Network [OSTI]

    S. Behura

    Engineers ’ (ITE) specification for light-emitting diode (LED) circular traffic signals recently was updated (June 27, 2005) and published under the name

  15. A fluctuational electrodynamics model for the optimization of light-extraction efficiency in thin-film light-emitting diodes

    SciTech Connect (OSTI)

    Heikkilä, Oskari, E-mail: oskari.heikkila@aalto.fi; Oksanen, Jani; Tulkki, Jukka [Department of Biomedical Engineering and Computational Science, Aalto University, Helsinki (Finland)

    2013-12-14T23:59:59.000Z

    The rapid development of thin film light-emitting diodes (LEDs) has enabled the enhancement of the light extraction beyond geometrical limits but more quantitative understanding of the underlying optical processes is required to fully optimize the extraction. We present first-principle calculations of the light extraction efficiency and optical energy flow in thin-film LEDs. The presented model generalizes the methods of fluctuational electrodynamics to excited semiconductors and simultaneously accounts for wave optical effects, e.g., interference and near-field coupling as well as the internal absorption of the light-emitting material in determining the rate of light emission and internal dissipation in the optical cavity formed by a planar LED. The calculations show that in structures with a metallic mirror, the emissivity of the active region can approach unity at selected wavelengths, even when the nominal emissivity of the active region is only moderate. However, the results also show that near-field coupling of emission from the active region to the mirror can provide a substantial non-radiative loss channel reducing the maximum light extraction efficiency to 0.67 in our example setup. These losses can be partly compensated by the efficient photon recycling enabled by thick active regions that quench emission to confined modes and thereby reduce parasitic absorption.

  16. Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model

    SciTech Connect (OSTI)

    Chow, Weng W.; Crawford, Mary H.; Tsao, Jeffrey Y.; Kneissl, Michael

    2010-01-01T23:59:59.000Z

    We propose a model to better investigate InGaN light-emitting diode (LED) internal efficiency by extending beyond the usual total carrier density rate equation approach. To illustrate its capability, the model is applied to study intrinsic performance differences between violet and green LEDs. The simulations show performance differences, at different current densities and temperatures, arising from variations in spontaneous emission and heat loss rates. By tracking the momentum-resolved carrier populations, these rate changes are, in turn, traced to differences in bandstructure and plasma heating. The latter leads to carrier distributions that deviate from the quasiequilibrium ones at lattice temperature.

  17. Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes

    SciTech Connect (OSTI)

    Tian, Pengfei; McKendry, Jonathan J. D.; Herrnsdorf, Johannes; Ferreira, Ricardo; Watson, Ian M.; Gu, Erdan, E-mail: erdan.gu@strath.ac.uk; Dawson, Martin D. [Institute of Photonics, University of Strathclyde, 106 Rottenrow, Glasgow G4 0NW (United Kingdom); Watson, Scott; Kelly, Anthony E. [School of Engineering, University of Glasgow, James Watt South Building, Glasgow G12 8LT (United Kingdom)

    2014-10-27T23:59:59.000Z

    Temperature-dependent trends in radiative and Auger recombination coefficients have been determined at different injection carrier concentrations using InGaN micro-light emitting diodes 40 ?m in diameter. The differential lifetime was obtained first from the measured modulation bandwidth and was then employed to calculate the carrier concentration in the quantum well active region. When the temperature increases, the carrier concentration increases, but both the radiative and Auger recombination coefficients decrease. In addition, the temperature dependence of radiative and Auger recombination coefficients is weaker at a higher injection carrier concentration, which is strongly related to phase space filling.

  18. Interplay between multiple scattering, emission, and absorption of light in the phosphor of a white light-emitting diode

    E-Print Network [OSTI]

    Leung, V Y F; Tukker, T W; Mosk, A P; IJzerman, W L; Vos, W L

    2013-01-01T23:59:59.000Z

    We study light transport in phosphor plates of white light-emitting diodes (LEDs). We measure the broadband diffuse transmission through phosphor plates of varying YAG:Ce$^{3+}$ density. We distinguish the spectral ranges where absorption, scattering, and re-emission dominate. Using diffusion theory, we derive the transport and absorption mean free paths from first principles. We find that both transport and absorption mean free paths are on the order of the plate thickness. This means that phosphors in commercial LEDs operate well within an intriguing albedo range around 0.7. We discuss how salient parameters that can be derived from first principles control the optical properties of a white LED.

  19. 22.3 / H. J. Peng 22.3: High Efficiency Electrophosphorescent Organic Light Emitting Diodes

    E-Print Network [OSTI]

    and Technology, Clear Water Bay, Hong Kong Abstract We have significantly improved the emission efficiency compared to conventional fluorescent OLEDs. Through harvesting both singlet and triplet excitons regime to the extraction cone, enhancing the coupling efficiency. Meanwhile, the spontaneous emission

  20. Light emitting diode package element with internal meniscus for bubble free lens placement

    SciTech Connect (OSTI)

    Tarsa, Eric; Yuan, Thomas C.; Becerra, Maryanne; Yadev, Praveen

    2010-09-28T23:59:59.000Z

    A method for fabricating a light emitting diode (LED) package comprising providing an LED chip and covering at least part of the LED chip with a liquid encapsulant having a radius of curvature. An optical element is provided having a bottom surface with at least a portion having a radius of curvature larger than the liquid encapsulant. The larger radius of curvature portion of the optical element is brought into contact with the liquid encapsulant. The optical element is then moved closer to the LED chip, growing the contact area between said optical element and said liquid encapsulant. The liquid encapsulant is then cured. A light emitting diode comprising a substrate with an LED chip mounted to it. A meniscus ring is on the substrate around the LED chip with the meniscus ring having a meniscus holding feature. An inner encapsulant is provided over the LED chip with the inner encapsulant having a contacting surface on the substrate, with the meniscus holding feature which defines the edge of the contacting surface. An optical element is included having a bottom surface with at least a portion that is concave. The optical element is arranged on the substrate with the concave portion over the LED chip. A contacting encapsulant is included between the inner encapsulant and optical element.

  1. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02T23:59:59.000Z

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  2. A spin light emitting diode incorporating ability of electrical helicity switching

    SciTech Connect (OSTI)

    Nishizawa, N., E-mail: nishizawa@isl.titech.ac.jp; Nishibayashi, K.; Munekata, H. [Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-J3-15 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

    2014-03-17T23:59:59.000Z

    Fabrication and optical characteristics of a spin light-emitting-diode (spin-LED) having dual spin-injection electrodes with anti-parallel magnetization configuration are reported. Alternating a current between the two electrodes using a computer-driven current source has led us to the observation of helicity switching of circular polarization at the frequency of 1 kHz. Neither external magnetic fields nor optical delay modulators were used. Sending dc-currents to both electrodes with appropriate ratio has resulted in continuous variation of circular polarization between the two opposite helicity, including the null polarization. These results suggest that the tested spin-LED has the feasibility of a monolithic light source whose circular polarization can be switched or continuously tuned all electrically.

  3. Roll-to-Roll Solution-Processible Small-Molecule OLEDs

    SciTech Connect (OSTI)

    Liu, Jie Jerry

    2012-07-31T23:59:59.000Z

    The objective of this program is to develop key knowledge and make critical connections between technologies needed to enable low-cost manufacturing of OLED lighting products. In particular, the program was intended to demonstrate the feasibility of making high performance Small-Molecule OLEDs (SM-OLED) using a roll-to-roll (R2R) wet-coating technique by addressing the following technical risks (1) Whether the wet-coating technique can provide high performance OLEDs, (2) Whether SM-OLED can be made in a R2R manner, (3) What are the requirements for coating equipment, and (4) Whether R2R OLEDs can have the same performance as the lab controls. The program has been managed and executed according to the Program Management Plan (PMP) that was first developed at the beginning of the program and further revised accordingly as the program progressed. Significant progress and risk reductions have been accomplished by the end of the program. Specific achievements include: (1) Demonstrated that wet-coating can provide OLEDs with high LPW and long lifetime; (2) Demonstrated R2R OLEDs can be as efficient as batch controls (Figure 1) (3) Developed & validated basic designs for key equipment necessary for R2R SM-OLEDs; (4) Developed know-hows & specifications on materials & ink formulations critical to wetcoating; (5) Developed key R2R processes for each OLED layer (6) Identified key materials and components such as flexible barrier substrates necessary for R2R OLEDs.

  4. Highly efficient greenish-blue platinum-based phosphorescent organic light-emitting diodes on a high triplet energy platform

    SciTech Connect (OSTI)

    Chang, Y. L., E-mail: yilu.chang@mail.utoronto.ca; Gong, S., E-mail: sgong@chem.utoronto.ca; White, R.; Lu, Z. H., E-mail: zhenghong.lu@utoronto.ca [Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, Ontario M5S 3E4 (Canada); Wang, X.; Wang, S., E-mail: wangs@chem.queensu.ca [Department of Chemistry, Queen's University, 90 Bader Lane, Kingston, Ontario K7L 3N6 (Canada); Yang, C. [Department of Chemistry, Wuhan University, Wuhan 430072 (China)

    2014-04-28T23:59:59.000Z

    We have demonstrated high-efficiency greenish-blue phosphorescent organic light-emitting diodes (PHOLEDs) based on a dimesitylboryl-functionalized C^N chelate Pt(II) phosphor, Pt(m-Bptrz)(t-Bu-pytrz-Me). Using a high triplet energy platform and optimized double emissive zone device architecture results in greenish-blue PHOLEDs that exhibit an external quantum efficiency of 24.0% and a power efficiency of 55.8?lm/W. This record high performance is comparable with that of the state-of-the-art Ir-based sky-blue organic light-emitting diodes.

  5. Illuminating Solar Decathlon Homes: Exploring Next Generation Lighting Technology - Light Emitting Diodes

    SciTech Connect (OSTI)

    Gordon, Kelly L.; Gilbride, Theresa L.

    2008-05-22T23:59:59.000Z

    This report was prepared by PNNL for the US Department of Energy Building Technologies Program, Solid-State Lighting Program. The report will be provided to teams of university students who are building houses for the 2009 Solar Decathlon, a home design competition sponsored in part by DOE, to encourage teams to build totally solar powered homes. One aspect of the competition is lighting. This report provides the teams with information about LED lighting that can help them determine how they incorporate LED lighting into their homes. The report provides an overview of LED technology, a status of where LED technology is today, questions and answers about lighting quality, efficiency, lifetime etc.; numerous examples of LED products; and several weblinks for further research.

  6. ZnO PN Junctions for Highly-Efficient, Low-Cost Light Emitting Diodes

    SciTech Connect (OSTI)

    David P. Norton; Stephen Pearton; Fan Ren

    2007-09-30T23:59:59.000Z

    By 2015, the US Department of Energy has set as a goal the development of advanced solid state lighting technologies that are more energy efficient, longer lasting, and more cost-effective than current technology. One approach that is most attractive is to utilize light-emitting diode technologies. Although III-V compound semiconductors have been the primary focus in pursuing this objective, ZnO-based materials present some distinct advantages that could yield success in meeting this objective. As with the nitrides, ZnO is a direct bandgap semiconductor whose gap energy (3.2 eV) can be tuned from 3.0 to 4 eV with substitution of Mg for higher bandgap, Cd for lower bandgap. ZnO has an exciton binding energy of 60 meV, which is larger than that for the nitrides, indicating that it should be a superior light emitting semiconductor. Furthermore, ZnO thin films can be deposited at temperatures on the order of 400-600 C, which is significantly lower than that for the nitrides and should lead to lower manufacturing costs. It has also been demonstrated that functional ZnO electronic devices can be fabricated on inexpensive substrates, such as glass. Therefore, for the large-area photonic application of solid state lighting, ZnO holds unique potential. A significant impediment to exploiting ZnO in light-emitting applications has been the absence of effective p-type carrier doping. However, the recent realization of acceptor-doped ZnO material overcomes this impediment, opening the door to ZnO light emitting diode development In this project, the synthesis and properties of ZnO-based pn junctions for light emitting diodes was investigated. The focus was on three issues most pertinent to realizing a ZnO-based solid state lighting technology, namely (1) achieving high p-type carrier concentrations in epitaxial and polycrystalline films, (2) realizing band edge emission from pn homojunctions, and (3) investigating pn heterojunction constructs that should yield efficient light emission. The project engaged established expertise at the University of Florida in ZnO film growth (D. Norton), device fabrication (F. Ren) and wide bandgap photonics (S. Pearton). It addressed p-type doping and junction formation in (Zn,Mg)O alloy thin films. The project employed pulsed laser deposition for film growth. The p-type dopant of interest was primarily phosphorus, given the recent results in our laboratory and elsewhere that this anions can yield p-type ZnO-based materials. The role of Zn interstitials, oxygen vacancies, and/or hydrogen complexes in forming compensating shallow donor levels imposes the need to simultaneously consider the role of in situ and post-growth processing conditions. Temperature-dependent Hall, Seebeck, C-V, and resistivity measurements was used to determine conduction mechanisms, carrier type, and doping. Temperature-dependent photoluminescence was used to determine the location of the acceptor level, injection efficiency, and optical properties of the structures. X-ray diffraction will used to characterize film crystallinity. Using these materials, the fabrication and characterization of (Zn,Mg)O pn homojunction and heterojunction devices was pursued. Electrical characterization of the junction capacitance and I-V behavior was used to extract junction profile and minority carrier lifetime. Electroluminescence from biased junctions was the primary property of interest.

  7. The Laser DiodeThe Laser Diode Jason HillJason Hill

    E-Print Network [OSTI]

    La Rosa, Andres H.

    a Laser Diode Works Edge Emitting Laser Diode Operates similar to a Light Emitting DiodeOperates similar to a Light Emitting Diode Active medium is a semiconductor pActive medium is a semiconductor p--n junctionn Operates similar to a Light Emitting DiodeOperates similar to a Light Emitting Diode Active medium

  8. Demonstration Assessment of Light-Emitting Diode (LED) Street Lighting Host Site: Lija Loop, Portland, Oregon

    SciTech Connect (OSTI)

    Kinzey, Bruce R.; Myer, Michael

    2009-11-01T23:59:59.000Z

    This report describes the process and results of a demonstration of solid-state lighting (SSL) technology in a residential street lighting application, under the U.S. Department of Energy GATEWAY Solid-State Lighting Technology Demonstration Program. In this project, eight 100W (nominal) high-pressure sodium cobra head fixtures were replaced with a like number of LED street light luminaires manufactured by Leotek, Inc. The Leotek product achieved an estimated payback in the Lija Loop installation of about 20 years for replacement scenarios and a much shorter 7.6 years for new installations. Much of the associated energy savings (55%) supporting these payback periods, however, were achieved by reducing average horizontal photopic illuminance a similar amount (53%). Examined from a different perspective, the measured performance suggests that the Leotek product is at approximate parity with the HPS cobra head in terms of average delivered photopic illumination for a given power consumption. HPS comprises the second most efficacious street lighting technology available, exceeded only by low pressure sodium (LPS). LPS technology is not considered suitable for most street lighting applications due to its monochromatic spectral output and poor color rendering ability; therefore, this LED product is performing at an efficiency level comparable to its primary competition in this application.

  9. High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

    E-Print Network [OSTI]

    Wu, Y.; Hasan, T.; Li, X.; Xu, P.; Wang, Y.; Shen, X.; Liu, X.; Yang, Q.

    2015-02-05T23:59:59.000Z

    We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5?nm. The dominant emission, detectable...

  10. Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    quantum well (QW) light-emitting diodes (LEDs) grown on sapphire and bulk GaN substrate by micro efficiency in dies grown on GaN substrates with a thermal resistance of 75 K/W. For dies on sapphire of GaN-based blue and green LEDs grown on sapphire and GaN substrates using micro-Raman spectroscopy

  11. Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

    DOE Patents [OSTI]

    Li, Ting (Ventura, CA)

    2011-04-26T23:59:59.000Z

    The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.

  12. Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

    DOE Patents [OSTI]

    Li, Ting

    2013-08-13T23:59:59.000Z

    The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.

  13. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07T23:59:59.000Z

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  14. Thermal And Mechanical Analysis of High-power Light-emitting Diodes with Ceramic Packages

    E-Print Network [OSTI]

    J. Hu; L. Yang; M. -W. Shin

    2008-01-07T23:59:59.000Z

    In this paper we present the thermal and mechanical analysis of high-power light-emitting diodes (LEDs) with ceramic packages. Transient thermal measurements and thermo-mechanical simulation were performed to study the thermal and mechanical characteristics of ceramic packages. Thermal resistance from the junction to the ambient was decreased from 76.1 oC/W to 45.3 oC/W by replacing plastic mould to ceramic mould for LED packages. Higher level of thermo-mechanical stresses in the chip were found for LEDs with ceramic packages despite of less mismatching coefficients of thermal expansion comparing with plastic packages. The results suggest that the thermal performance of LEDs can be improved by using ceramic packages, but the mounting process of the high power LEDs with ceramic packages is critically important and should be in charge of delaminating interface layers in the packages.

  15. Optical Simulation of Top-emitting Organic Light Emitting Diodes H. J. Peng, C.F. Qiu, Z. L. Xie, H. Y. Chen, M. Wong and H. S. Kwok

    E-Print Network [OSTI]

    Kwok, Hoi S.

    8.3.3-89 Optical Simulation of Top-emitting Organic Light Emitting Diodes H. J. Peng, C.F. Qiu, Z the optical effects for the top-emitting organic light emitting diodes. The optical performance of the devices with experiments Keywords: Top-emitting organic light emitting diode, optical modeling, microcavity INTRODUCTION

  16. Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 2) semipolar versus (0001) polar

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Articles you may be interested in Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam light-emitting diodes prepared on ( 11 2 ¯ 2 ) -plane GaN J. Appl. Phys. 100, 113109 (2006); 10.1063/1.2382667 Demonstration of a semipolar ( 10 1 ¯ 3 ¯ ) In Ga N Ga N green light emitting diode Appl. Phys. Lett. 87, 231110

  17. Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

    SciTech Connect (OSTI)

    Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir; Verma, Amit; Grace Xing, Huili; Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)] [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)

    2013-01-28T23:59:59.000Z

    We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve tunnel injection, relatively low composition AlGaN is used for n- and p-type layers to simultaneously take advantage of effective band alignment and efficient doping. The small height of the quantum dots results in short-wavelength emission and are simultaneously an effective tool to fight the reduction of oscillator strength from quantum-confined Stark effect due to polarization fields. The strong quantum confinement results in room-temperature electroluminescence peaks at 261 and 340 nm, well above the 365 nm bandgap of bulk GaN. The demonstration opens the doorway to exploit many varied features of quantum dot physics to realize high-efficiency short-wavelength light sources.

  18. UDC Develops Prototype High-Efficiency OLED Undercabinet Luminaire

    Broader source: Energy.gov [DOE]

    Universal Display Corporation (UDC) has demonstrated the real-world application of a novel lighting technology by developing two pre-prototype OLED undercabinet lighting systems that exceed 420 total lumens at an efficacy of more than 55 lm/W, with an estimated lifetime (LT70) in excess of 10,000 hours, and a color rendering index (CRI) greater than 85.

  19. High Efficancy Integrated Under-Cabinet Phosphorescent OLED

    SciTech Connect (OSTI)

    Michael Hack

    2001-10-31T23:59:59.000Z

    In this two year program Universal Display Corporation (UDC) together with the University of Michigan, Teknokon, developed and delivered an energy efficient phosphorescent OLED under cabinet illumination system. Specifically the UDC team goal was in 2011 to deliver five (5) Beta level OLED under cabinet lighting fixtures each consisting of five 6-inch x 6-inch OLED lighting panels, delivering over 420 lumens, at an overall system efficacy of >60 lm/W, a CRI of >85, and a projected lifetime to 70% of initial luminance to exceed 20,000 hours. During the course of this program, the Team pursued the commercialization of these OLED based under cabinet lighting fixtures, to enable the launch of commercial OLED lighting products. The UDC team was ideally suited to develop these novel and efficient solid state lighting fixtures, having both the technical experience and commercial distribution mechanisms to leverage work performed under this contract. UDC's business strategy is to non-exclusively license its PHOLED technology to lighting manufacturers, and also supply them with our proprietary PHOLED materials. UDC is currently working with several licensees who are manufacturing OLED lighting panels using our technology. During this 2 year program, we further developed our high efficiency white Phosphorescent OLEDs from the first milestone, achieving a 80 lm/W single pixel to the final milestone, achieving an under-cabinet PHOLED lighting system that operates at 56 lm/W at 420 lumens. Each luminaire was comprised of ten 15cm x 7.5cm lighting modules mounted in outcoupling enhancement lenses and a control module. The lamps modules are connected together using either plugs or wires with plugs on each end, allowing for unlimited configurations. The lamps are driven by an OLED driver mounted in an enclosure which includes the AC plug. As a result of advancements gained under this program, the path to move OLED lighting panels from development into manufacturing has been further realized. We have found that under-cabinet lighting is an ideal first entry product opportunity to launch OLED lighting for residential applications. From the studies that we have performed, our PHOLED under-cabinet lighting system performance is very similar to many of the current commercially available LED under-cabinet luminaires. We also found that the projected cost of PHOLED luminaire should be comparable to the LED luminaire by 2015. With the additional benefits of PHOLED lighting, no glare, better uniformity and low operating temperature, it can be easily seen how the PHOLED under-cabinet luminaire could be preferred over the LED competition. Although the metrics we set for this program were extremely aggressive, the performance we achieved and reported, represents a very significant advancement in the OLED lighting industry.

  20. LASER DIODE TECHNOLOGY AND APPLICATIONS Submitted to

    E-Print Network [OSTI]

    La Rosa, Andres H.

    and a normal diode and a light emitting diode. I will also define the terms homojunction and heterojunction, and is the main source of light in a light-emitting diode. Under suitable conditions, the electron and the hole

  1. Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED)

    SciTech Connect (OSTI)

    Kurose, N., E-mail: kurose@fc.ritsumei.ac.jp; Aoyagi, Y. [The Research Organization of Science and Technology, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577 (Japan)] [The Research Organization of Science and Technology, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577 (Japan); Shibano, K.; Araki, T. [Department of Science and Technology, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577 (Japan)] [Department of Science and Technology, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577 (Japan)

    2014-02-15T23:59:59.000Z

    A vertical ultraviolet (UV) light-emitting diode (LED) that does not require substrate removal is developed. Spontaneous via holes are formed in n-AlN layer epitaxially grown on a high conductive n+Si substrate and the injected current flows directly from the p-electrode to high doped n{sup +} Si substrate through p-AlGaN, multi-quantum wells, n-AlGaN and spontaneous via holes in n-AlN. The spontaneous via holes were formed by controlling feeding-sequence of metal-organic gas sources and NH{sub 3} and growth temperature in MOCVD. The via holes make insulating n-AlN to be conductive. We measured the current-voltage, current-light intensity and emission characteristics of this device. It exhibited a built-in voltage of 3.8 V and emission was stated at 350 nm from quantum wells with successive emission centered at 400?nm. This UV LED can be produced, including formation of n and p electrodes, without any resist process.

  2. Sliding Mode Pulsed Averaging IC Drivers for High Brightness Light Emitting Diodes

    SciTech Connect (OSTI)

    Dr. Anatoly Shteynberg, PhD

    2006-08-17T23:59:59.000Z

    This project developed new Light Emitting Diode (LED) driver ICs associated with specific (uniquely operated) switching power supplies that optimize performance for High Brightness LEDs (HB-LEDs). The drivers utilize a digital control core with a newly developed nonlinear, hysteretic/sliding mode controller with mixed-signal processing. The drivers are flexible enough to allow both traditional microprocessor interface as well as other options such as “on the fly” adjustment of color and brightness. Some other unique features of the newly developed drivers include • AC Power Factor Correction; • High power efficiency; • Substantially fewer external components should be required, leading to substantial reduction of Bill of Materials (BOM). Thus, the LED drivers developed in this research : optimize LED performance by increasing power efficiency and power factor. Perhaps more remarkably, the LED drivers provide this improved performance at substantially reduced costs compared to the present LED power electronic driver circuits. Since one of the barriers to market penetration for HB-LEDs (in particular “white” light LEDs) is cost/lumen, this research makes important contributions in helping the advancement of SSL consumer acceptance and usage.

  3. Stress-induced piezoelectric field in GaN-based 450-nm light-emitting diodes

    SciTech Connect (OSTI)

    Tawfik, Wael Z. [Department of Materials Science and Engineering, Chonnam National University, Yongbong 300 Gwangju 500-757 (Korea, Republic of); Department of Physics, Faculty of Science, Beni-Suef University, Beni-Suef 62511 (Egypt); Hyeon, Gil Yong; Lee, June Key, E-mail: junekey@chonnam.ac.kr [Department of Materials Science and Engineering, Chonnam National University, Yongbong 300 Gwangju 500-757 (Korea, Republic of)

    2014-10-28T23:59:59.000Z

    We investigated the influence of the built-in piezoelectric field induced by compressive stress on the characteristics of GaN-based 450-nm light-emitting diodes (LEDs) prepared on sapphire substrates of different thicknesses. As the sapphire substrate thickness was reduced, the compressive stress in the GaN layer was released, resulting in wafer bowing. The wafer bowing-induced mechanical stress altered the piezoelectric field, which in turn reduced the quantum confined Stark effect in the InGaN/GaN active region of the LED. The flat-band voltage was estimated by measuring the applied bias voltage that induced a 180° phase shift in the electro-reflectance (ER) spectrum. The piezoelectric field estimated by the ER spectra changed by ?110?kV/cm. The electroluminescence spectral peak wavelength was blue-shifted, and the internal quantum efficiency was improved by about 22% at a high injection current of 100?mA. The LED on the 60-?m-thick sapphire substrate exhibited the highest light output power of ?59?mW at an injection current of 100?mA, with the operating voltage unchanged.

  4. Angular distribution of polarized spontaneous emissions and its effect on light extraction behavior in InGaN-based light emitting diodes

    SciTech Connect (OSTI)

    Yuan, Gangcheng; Chen, Xinjuan; Yu, Tongjun, E-mail: tongjun@pku.edu.cn; Lu, Huimin; Chen, Zhizhong; Kang, Xiangning; Wu, Jiejun; Zhang, Guoyi [State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)

    2014-03-07T23:59:59.000Z

    Angular intensity distributions of differently polarized light sources in multiple quantum wells (MQWs) and their effects on extraction behavior of spontaneous emission from light emitting diode (LED) chips have been studied. Theoretical calculation based on k·p approximation, ray tracing simulation and angular electroluminescence measurement were applied in this work. It is found that the electron-hole recombination in the InGaN MQWs produces a spherical distribution of an s-polarized source and a dumbbell-shaped p-polarized source. Light rays from different polarized sources experience different extraction processes, determining the polarization degree of electro-luminescence and extraction efficiency of LEDs.

  5. Note: A portable, light-emitting diode-based ruby fluorescence spectrometer for high-pressure calibration

    SciTech Connect (OSTI)

    Feng Yejun [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

    2011-04-15T23:59:59.000Z

    Ruby (Al{sub 2}O{sub 3}, with {approx}0.5 wt. % Cr doping) is one of the most widely used manometers at the giga-Pascal scale. Traditionally, its fluorescence is excited with intense laser sources. Here, I present a simple, robust, and portable design that employs light-emitting diodes (LEDs) instead. This LED-based system is safer in comparison with laser-based ones.

  6. Demonstration Assessment of Light Emitting Diode (LED) Commercial Garage Lights In the Providence Portland Medical Center, Portland, Oregon

    SciTech Connect (OSTI)

    Ton, My K.; Richman, Eric E.; Gilbride, Theresa L.

    2008-11-11T23:59:59.000Z

    This U.S. Department of Energy GATEWAY Demonstration project studied the applicability of light-emitting diode (LED) luminaires for commercial parking garage applications. High-pressure sodium (HPS) area luminaires were replaced with new LED area luminaires. The project was supported under the U.S. Department of Energy (DOE) Solid State Lighting Program. Other participants in the demonstration project included Providence Portland Medical Center in Portland, Oregon, the Energy Trust of Oregon, and Lighting Sciences Group (LSG) Inc. Pacific Northwest National Laboratory (PNNL) conducted the measurements and analysis of the results. PNNL manages GATEWAY demonstrations for DOE and represents their perspective in the conduct of the work. Quantitative and qualitative measurements of light and electrical power were taken at the site for both HPS and LED light sources. Economic costs were estimated and garage users’ responses to the new light sources were gauged with a survey. Six LED luminaires were installed in the below-ground parking level A, replacing six existing 150W HPS lamps spread out over two rows of parking spaces. Illuminance measurements were taken at floor level approximately every 4 ft on a 60-ft x 40-ft grid to measure light output of these LED luminaires which were termed the “Version 1” luminaires. PNNL conducted power measurements of the circuit in the garage to which the 6 luminaires were connected and determined that they drew an average of 82 W per lamp. An improved LED luminaire, Version 2, was installed in Level B of the parking garage. Illuminance measurements were not made of this second luminaire on site due to higher traffic conditions, but photometric measurements of this lamp and Version 1 were made in an independent testing laboratory and power usage for Version 2 was also measured. Version 1 was found to produce 3600 lumens and Version 2 was found to produce 4700 lumens of light and to consume 78 Watts. Maximum and minimum light levels were measured for the HPS and LED Version 1 luminaires and projected for the Version 2 luminaires. Maximum light levels were 23.51 foot candles, 20.54 fc, and 26.7 fc respectively and minimum light levels were 1.49 fc, 1.45 fc, and 1.88 fc. These results indicate very similar or even slightly higher light levels produced by the LED lamps, despite the higher lumen output of the HPS lamp. The LED lamps provide higher luminaire efficacy because all of the light is directed down and out. None of it is “lost” in the fixture. Also the HPS luminaire had poorly designed optics and a plastic covering that tended to get dirty and cracked, further decreasing the realized light output.[is this an accurate way to say this?] Consumer perceptions of the Version 2 LED were collected via a written survey form given to maintenance and security personnel. More than half felt the LED luminaires provided more light than the HPS lamps and a majority expressed a preference for the new lamps when viewing the relamped area through a security camera. Respondents commented that the LED luminaires were less glary, created less shadows, had a positive impact on visibility, and improved the overall appearance of the area. PNNL conducted an economic analysis and found that the Version 1 lamp produced annual energy savings of 955 kWh and energy cost savings of $76.39 per lamp at electricity rates of 6.5 cents per kWh and $105.03 at 11 cents per kWh. PNNL found that the Version 2 lamp produced annual energy savings of 991 kWh and energy cost savings of $79.26 per lamp at electricity rates of 6.5 cents per kWh and $108.98 at 11 cents per kWh. PNNL also calculated simple payback and found that Version 1 showed paybacks of 5.4 yrs at 6.5c/kWh and 4.1 yrs at 11c/kWh while Version 2 showed paybacks of 5.2 yrs at 6.5c/kWh and 3.9 yrs at 11c/kWh.

  7. Dislocation-related trap levels in nitride-based light emitting diodes

    SciTech Connect (OSTI)

    Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, Bologna 40127 (Italy); Meneghini, Matteo; Zanoni, Enrico [Department of Information Engineering, University of Padova, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2014-05-26T23:59:59.000Z

    Deep level transient spectroscopy was performed on InGaN/GaN multiple quantum well light emitting diodes (LEDs) in order to determine the effect of the dislocation density on the deep intragap electronic levels. The LEDs were grown by metalorganic vapor phase epitaxy on GaN templates with a high dislocation density of 8 × 10{sup 9} cm{sup ?2} and a low dislocation density of 3 × 10{sup 8} cm{sup ?2}. Three trapping levels for electrons were revealed, named A, A1, and B, with energies E{sub A}???0.04?eV, E{sub A1}???0.13?eV, and E{sub B}???0.54?eV, respectively. The trapping level A has a much higher concentration in the LEDs grown on the template with a high density of dislocations. The logarithmic dependence of the peak amplitude on the bias pulse width for traps A and A1 identifies the defects responsible for these traps as associated with linearly arranged defects. We conclude that traps A and A1 are dislocation-related intragap energy levels.

  8. Nanostructured GaN Nucleation Layer for Light-Emitting Diodes

    SciTech Connect (OSTI)

    Narayan, Jagdish [North Carolina State University; Pant, Punam [North Carolina State University; Wei, Wei [North Carolina State University; Narayan, Roger [University of North Carolina, Chapel Hill; Budai, John D [ORNL

    2007-01-01T23:59:59.000Z

    This paper addresses the formation of nanostructured gallium nitride nucleation (NL) or initial layer (IL), which is necessary to obtain a smooth surface morphology and reduce defects in h-GaN layers for light-emitting diodes and lasers. From detailed X-ray and HR-TEM studies, researchers determined that this layer consists of nanostructured grains with average grain size of 25 nm, which are separated by small-angle grain boundaries (with misorientation 1 ), known as subgrain boundaries. Thus NL is considered to be single-crystal layer with mosaicity of about 1 . These nc grains are mostly faulted cubic GaN (c-GaN) and a small fraction of unfaulted c-GaN. This unfaulted Zinc-blende c-GaN, which is considered a nonequilibrium phase, often appears as embedded or occluded within the faulted c-GaN. The NL layer contained in-plane tensile strain, presumably arising from defects due to island coalescence during Volmer-Weber growth. The 10L X-ray scans showed c-GaN fraction to be over 63% and the rest h-GaN. The NL layer grows epitaxially with the (0001) sapphire substrate by domain matching epitaxy, and this epitaxial relationship is remarkably maintained when c-GaN converts into h-GaN during high-temperature growth.

  9. Photovoltaic nanopillar radial junction diode architecture enhanced by integrating semiconductor quantum dot nanocrystals as light harvesters

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Photovoltaic nanopillar radial junction diode architecture enhanced by integrating semiconductor hybridized, radial p-n junction based, nanopillar solar cells with photovoltaic performance enhanced. By furnishing Si based nanopillar photovoltaic diodes with CdSe quantum dots, we experimentally showed up

  10. Light-extraction enhancement in GaN-based light-emitting diodes using grade-refractive-index amorphous titanium oxide films with porous structures

    SciTech Connect (OSTI)

    Liu, D.-S.; Lin, T.-W.; Huang, B.-W.; Juang, F.-S.; Lei, P.-H. [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei 63201, Taiwan (China); Hu, C.-Z. [Chilin Technology Co. Ltd., Tainan County 71758, Taiwan (China)

    2009-04-06T23:59:59.000Z

    Amorphous titanium oxide (a-TiO{sub x}:OH) films prepared by plasma-enhanced chemical-vapor deposition at 200 and 25 deg. C are in turn deposited onto the GaN-based light-emitting diode (LED) to enhance the associated light extraction efficiency. The refractive index, porosity, and photocatalytic effect of the deposited films are correlated strongly with the deposition temperatures. The efficiency is enhanced by a factor of {approx}1.31 over that of the uncoated LEDs and exhibited an excellent photocatalytic property after an external UV light irradiation. The increase in the light extraction is related to the reduction in the Fresnel transmission loss and the enhancement of the light scattering into the escape cone by using the graded-refractive-index a-TiO{sub x}:OH film with porous structures.

  11. Demonstration Assessment of Light-Emitting Diode (LED) Retrofit Lamps at the Lobby of the Bonneville Power Administration, Portland, OR

    SciTech Connect (OSTI)

    Miller, Naomi

    2011-07-01T23:59:59.000Z

    This report describes the process and results of a demonstration of solid-state lighting (SSL) technology in the lobby of the Bonneville Power Administration (BPA) headquarters building in Portland, Oregon. The project involved a simple retrofit of 32 track lights used to illuminate historical black-and-white photos and printed color posters from the 1930s and 1940s. BPA is a federal power marketing agency in the Northwestern United States, and selected this prominent location to demonstrate energy efficient light-emitting diode (LED) retrofit options that not only can reduce the electric bill for their customers but also provide attractive alternatives to conventional products, in this case accent lighting for BPA's historical artwork.

  12. A low-cost optical sensing device based on paired emitter-detector light emitting diodes. Analytica Chimica Acta 2006

    E-Print Network [OSTI]

    King-tong Lau; Susan Baldwin; Roderick Shepherd; William J. Yerazunis; Shinichi Izuo; Satoshi Ueyama; Dermont Diamond; Emitter-detector Leds; King-tong Lau; Susan Baldwin; Roderick Shepherd; William J; Shinichi Izuo; Satoshi Ueyama; Dermot Diamond

    A low power, high sensitivity, very low cost light emitting diode (LED) based device for intensity based light measurements is described. In this approach, a reverse-biased LED functioning as a photodiode, is coupled with a second LED configured in conventional emission mode. A simple timer circuit measures how long (in us) it takes for the photocurrent generated on the detector LED to discharge its capacitance from logic 1(+5 V) to logic 0 (+1.7 V). The entire instrument provides an inherently digital output of light intensity measurements for a few cents. this light intensity dependent discharge process has been applied to measuring concentrations of coloured solutions and a mathematical model developed based on the Beer-Lambert Law.

  13. Studies of solution-processed organic light-emitting diodes and their materials

    SciTech Connect (OSTI)

    Hellerich, Emily [Ames Laboratory] [Ames Laboratory

    2013-05-15T23:59:59.000Z

    A hitherto unexplored approach is presented in which a small molecule is used as a host to polymer guests in solution-processed OLEDs. We find that the small molecule host results in much more efficient devices than the often-used alternative polymer host when used for the guests presented. It is likely that nano- and microstructural differences between the hosts contribute to the improvements, which highlights some interesting characteristics that can help to better understand the nature of these mixtures. A number of the guests used in this study were newly synthesized benzobisoxazole-based copolymers. New organic copolymers are presented that are based on the chemical structure of benzobisoxazoles, which have been shown in the past to have good electron transporting properties. The novel concept in this publication pertains to a change in the direction of polymerization, also known as the conjugation pathway, which we show increases the emission efficiency. This work highlights a unique and useful property of organic semiconducting materials in that they can be synthesized to create the desired characteristics. Earlier work is described that kick-started in our research group the use of small molecules in solution-processed OLEDs. Originally these devices were to be used in magnetoresistance studies, but the project took a different path when the devices were more efficient than expected. The efficient use of small molecules in solution-processed OLEDs is highlighted, which at the time was not often the case. Also, the important observation of the effect of solvent choice on the resultant film is emphasized, with discussion of the likely cause of these effects. Microcavity OLEDs are introduced in which the transparent anode ITO is replaced with semi-transparent thin silver, which creates an optical cavity within the devices. The goal was to expand a previous work that created an on-chip spectrometer covering wavelengths 493 to 639 nm. In this case, a spin-coated mixed emitting layer (EML) is used, consisting of a polymer and a small molecule that both emit in the near UV and blue. The resulting combined spectra gives a wide band that can be used to create narrow microcavity emission peaks of 373 to 469 nm, depending on the device thickness (i.e. the cavity’s optical length). In the process of this effort, the mixed EML presented interesting complexities that we attempt to explain via simulation and morphology study.

  14. LED Watch: The Outlook for OLEDs

    Broader source: Energy.gov [DOE]

    December 2014 LED Watch: The Outlook for OLEDs James Brodrick, U.S. Department of Energy LD+A Magazine

  15. Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    m-plane In x Ga 1?x N / GaN blue light emitting diodesmea- surements. Since the blue MQW emission is polarized toS. Nakamura and G. Fasol, The Blue Laser Diode ?Springer,

  16. An optimal light-extracting overlayer, inspired by the lantern of a Photuris firefly, to improve the external efficiency of existing light-emitting diodes

    E-Print Network [OSTI]

    Bay, Annick; Sarrazin, Michael; Belarouci, Ali; Aimez, Vincent; Francis, Laurent A; Vigneron, Jean Pol

    2012-01-01T23:59:59.000Z

    Actual light emission diodes (LED) have most often good internal efficiencies but poor external efficiencies due to total internal reflection at the air interface. In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is investigated. The purpose of this overlayer is to improve light extraction into air, after the photons have been generated in the diode's high refractive-index active material. The layer design is inspired by the microstructure found in the firefly Photuris sp., described by Bay et al. : a surface with an asymmetrical triangular profile (a "factory-roof" shape), developed on the scale of a few micrometers, thus somewhat larger than usually suggested in the related literature. The profile of the overlayer corrugated surface of the coating film was copied from the natural model. Yet, the actual dimensions and material composition have been optimized to take into account the high refractive index of the GaN diode stack. The optimization proc...

  17. Development of High Efficacy, Low Cost Phosphorescent Oled Lightning Luminaire

    SciTech Connect (OSTI)

    Michael Hack

    2010-07-09T23:59:59.000Z

    In this two year program, UDC together with Armstrong World Industries, Professor Stephen Forrest (University of Michigan) and Professor Mark Thompson (University of Southern California) planned to develop and deliver high efficiency OLED lighting luminaires as part of an integrated ceiling illumination system that exceed the Department of Energy (DOE) 2010 performance projections. Specifically the UDC team in 2010 delivered two prototype OLED ceiling illumination systems, each consisting of four individual OLED lighting panels on glass integrated into Armstrong's novel TechZone open architecture ceiling systems, at an overall system efficacy of 51 lm/W, a CRI = 85 and a projected lifetime to 70% of initial luminance to exceed 10,000 hours. This accomplishment represents a 50% increase in luminaire efficacy and a factor of two in lifetime over that outlined in the solicitation. In addition, the team has also delivered one 15cm x 15cm lighting panel fabricated on a flexible metal foil substrate, demonstrating the possibility using OLEDs in a range of form factors. During this program, our Team has pursued the commercialization of these OLED based ceiling luminaires, with a goal to launch commercial products within the next three years. We have proven that our team is ideally suited to develop these highly novel and efficient solid state lighting luminaires, having both the technical experience and commercial strategy to leverage work performed under this contract. Our calculations show that the success of our program could lead to energy savings of more than 0.5 quads or 8 MMTC (million metric tons of carbon) per year by 2016.

  18. Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation

    SciTech Connect (OSTI)

    Kim, Jeomoh; Ji, Mi-Hee; Detchprohm, Theeradetch [Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, Georgia 30332-0250 (United States); Yuan, Dajun; Guo, Rui [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States); Liu, Jianping [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215125 (China); Asadirad, Mojtaba [Materials Engineering Program, University of Houston, Houston, Texas 77204-4005 (United States); Kwon, Min-Ki [Department of Photonic Engineering, Chosun University, Seosuk-dong, Gwangju 501-759 (Korea, Republic of); Dupuis, Russell D. [Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, Georgia 30332-0250 (United States); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245 (United States); Das, Suman [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245 (United States); Ryou, Jae-Hyun, E-mail: jryou@uh.edu [Materials Engineering Program, University of Houston, Houston, Texas 77204-4005 (United States); Department of Mechanical Engineering and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, Texas 77204-4006 (United States)

    2014-04-07T23:59:59.000Z

    We report on the direct patterning of two-dimensional periodic structures in GaN-based light-emitting diodes (LEDs) through laser interference ablation for the fast and reliable fabrication of periodic micro- and nano-structures aimed at enhancing light output. Holes arranged in a two-dimensional hexagonal lattice array having an opening size of 500?nm, depth of 50?nm, and a periodicity of 1??m were directly formed by three-beam laser interference without photolithography or electron-beam lithography processes. The laser-patterned LEDs exhibit an enhancement in light output power of 20% compared to conventional LEDs having a flat top surface without degradation of electrical and optical properties of the top p-GaN layer and the active region, respectively.

  19. Spectrally Narrowed Edge Emission from Organic Light-Emitting Diodes: Evidence for Amplified Spontaneous Emission and Mirrorless Lasing

    E-Print Network [OSTI]

    Yun Tian; Zhengqing Gan; Zhaoqun Zhou; Ji-hun Kang; Q-Han Park; David W. Lynch; Joseph Shinar

    2007-01-14T23:59:59.000Z

    p-Conjugated materials, including small molecules and polymers, are attracting substantial attention as novel gain media in semiconductor lasers; they offer many potential advantages not achievable with conventional inorganic semiconductors: simple processing, low cost, easy tuneability of the spectrum, and large-area integration on flexible substrates. Optically pumped lasing action in various small molecular and polymeric p-conjugated materials has been demonstrated using several resonator configurations. However, electrically pumped organic semiconductor lasers, i.e., organic injection or diode lasers, remain elusive, presumably due to various loss mechanisms, e.g., charge (polaron)-induced absorption and metal electrode absorption. Here we report on evidence for amplified spontaneous emission (ASE), also known as mirrorless lasing (i.e., wherein some of the spontaneously emitted photons are amplified by stimulated emission during their propagation) in DC-driven small molecular organic light-emitting diodes (SMOLEDs). The evidence includes a dramatic spectral line narrowing, with a full width at half maximum (FWHM) of only 5 - 10 nm, and optical gain, of the edge-emission from SMOLEDs at room temperature. However, there is no clear indication of threshold behavior associated with this spectral narrowing. Nevertheless, this discovery should pave the way towards the realization of an organic diode laser.

  20. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06T23:59:59.000Z

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  1. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D., E-mail: dipankarsaha@iitb.ac.in [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); IITB-Monash Research Academy, Indian Institute of Technology Bombay, Mumbai 400076 (India); Adari, R.; Sankaranarayan, S.; Kumar, A. [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India)] [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S. [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)] [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

    2013-12-09T23:59:59.000Z

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  2. 2014-06-18 Issuance: Test Procedure for Integrated Light-Emitting Diode Lamps; Supplemental Notice of Proposed Rulemaking

    Broader source: Energy.gov [DOE]

    This document is a pre-publication Federal Register Supplemental Notice of Proposed Rulemaking regarding Test Procedures for Integrated Light-Emitting Diode Lamps, as issued by the Deputy Assistant Secretary for Energy Efficiency on June 18, 2014. Though it is not intended or expected, should any discrepancy occur between the document posted here and the document published in the Federal Register, the Federal Register publication controls. This document is being made available through the Internet solely as a means to facilitate the public's access to this document.

  3. Influences of excitation-dependent bandstructure changes on InGaN light-emitting diode efficiency

    E-Print Network [OSTI]

    Chow, Weng W

    2011-01-01T23:59:59.000Z

    Bandstructure properties in wurtzite quantum wells can change appreciably with changing carrier density because of screening of quantum-confined Stark effect. An approach for incorporating these changes in an InGaN light-emitting-diode model is described. Bandstructure is computed for different carrier densities by solving Poisson and k\\cdotp equations in the envelop approximation. The information is used as input in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach is illustrated by modeling device internal quantum efficiency as a function of excitation.

  4. Modeling of temperature and excitation dependences of efficiency in an InGaN light-emitting diode

    E-Print Network [OSTI]

    Chow, Weng W

    2013-01-01T23:59:59.000Z

    The changes in excitation dependence of efficiency with temperature is modeled for a wurtzite InGaN light-emitting diode. The model incorporates bandstructure changes with carrier density arising from screening of quantum-confined Stark effect. Bandstructure is computed by solving Poisson and k.p equations in the envelop approximation. The information is used in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach shows the interplay of quantum-well and barrier emissions giving rise to shape changes in efficiency versus current density with changing temperature, as observed in some experiments.

  5. Edmund G. Brown Jr. LIGHTING CALIFORNIA'S FUTURE

    E-Print Network [OSTI]

    Edmund G. Brown Jr. Governor LIGHTING CALIFORNIA'S FUTURE: SMART LIGHT-EMITTING DIODE LIGHTING's Future: Smart LightEmitting Diode Lighting in Residential Fans. California Energy Commission, PIER

  6. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

    SciTech Connect (OSTI)

    Sizov, V. S., E-mail: vsizov@mail.ioffe.ru; Tsatsulnikov, A. F.; Sakharov, A. V.; Lundin, W. V.; Zavarin, E. E.; Cherkashin, N. A. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Hytch, M. J. [National Center for Scientific Research (CNRS), Center for Material Elaboration and Structural Studies (CEMES) (France); Nikolaev, A. E. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Mintairov, A. M.; He Yan; Merz, J. L. [University of Notre Dame, EE Department (United States)

    2010-07-15T23:59:59.000Z

    Optical and light-emitting diode structures with an active InGaN region containing short-period InGaN/GaN superlattices are studied. It is shown that short-period superlattices are thin two-dimensional layers with a relatively low In content that contain inclusions with a high In content 1-3 nm thick. Inclusions manifest themselves from the point of view of optical properties as a nonuniform array of quantum dots involved in a residual quantum well. The use of short-period superlattices in light-emitting diode structures allows one to decrease the concentration of nonradiative centers, as well as to increase the injection of carriers in the active region due to an increase in the effective height of the AlGaN barrier, which in general leads to an increase in the quantum efficiency of light-emitting diodes.

  7. Observation of enhanced visible and infrared emissions in photonic crystal thin-film light-emitting diodes

    SciTech Connect (OSTI)

    Cheung, Y. F.; Li, K. H.; Hui, R. S. Y.; Choi, H. W., E-mail: hwchoi@hku.hk [Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road (Hong Kong)

    2014-08-18T23:59:59.000Z

    Photonic crystals, in the form of closed-packed nano-pillar arrays patterned by nanosphere lithography, have been formed on the n-faces of InGaN thin-film vertical light-emitting diodes (LEDs). Through laser lift-off of the sapphire substrate, the thin-film LEDs conduct vertically with reduced dynamic resistances, as well as reduced thermal resistances. The photonic crystal plays a role in enhancing light extraction, not only at visible wavelengths but also at infrared wavelengths boosting heat radiation at high currents, so that heat-induced effects on internal quantum efficiencies are minimized. The observations are consistent with predictions from finite-difference time-domain simulations.

  8. Monolithic phosphor-free InGaN/GaN quantum dot wavelength converter white light emitting diodes

    SciTech Connect (OSTI)

    Jahangir, Shafat; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States); Pietzonka, Ines; Strassburg, Martin [OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, Regensburg (Germany)

    2014-09-15T23:59:59.000Z

    We report the characteristics of phosphor-free self-organized InGaN/GaN quantum dot wavelength converter white light emitting diodes grown by plasma assisted molecular beam epitaxy. The exciting quantum dots, in which electrically injected carriers recombine, are blue-emitting and the converter dots are red-emitting. We have studied the effect of tuning the number of dot layers and the peak emission wavelength of the exciting and converter dots on the nature of the emitted white light, in terms of the chromaticity coordinates and correlated color temperature. Depending on the values of these wavelengths, color temperatures in the range of 4420–6700?K have been derived at a current density of 45?A/cm{sup 2} across multiple devices. The variation of the color temperature with change in injection current is found to be very small.

  9. Polarization ratio enhancement of a-plane GaN light emitting diodes by asymmetric two-dimensional photonic crystals

    SciTech Connect (OSTI)

    Chou, Yen; Li, Hsiang-Wei; Yin, Yu-Feng; Wang, Yu-Ting; Lin, Yen-Chen; Wu, Yuh-Renn; Huang, Jian Jang, E-mail: jjhuang@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan (China); Lin, Da-Wei; Kuo, Hao-Chung [Department of Photonics and Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan (China)

    2014-05-21T23:59:59.000Z

    Fabricating photonic crystals (PhCs) on GaN based non-polar light emitting diodes (LEDs) is an effective way to increase light extraction and meanwhile to preserve or improve polarization ratio. In this work, a-plane GaN LEDs with two-dimensional PhCs were demonstrated. With the E // m polarized modes (which mean the optical polarization with the electric field parallel to m-axis) as the target of diffraction, we matched E//m modes to the photonic bands and aligned E//c modes to fall within the photonic band gap. The results show stronger E//m but weaker E//c mode diffractions on both c- and m-axes. At the vertical direction, the polarization ratio is enhanced from 45.8% for the planar device to 52.3% for the LEDs with PhCs.

  10. Phosphor-free nanopyramid white light-emitting diodes grown on (101{sup ¯}1) planes using nanospherical-lens photolithography

    SciTech Connect (OSTI)

    Wu, Kui [State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China) [State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Tsinghua University, Beijing 100084 (China); Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Wei, Xuecheng; Zheng, Haiyang; Chen, Yu; Lu, Hongxi; Wang, Junxi; Li, Jinmin [State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)] [State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Lan, Ding [National Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100080 (China)] [National Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100080 (China); Huang, Kai [Platform of Characterization and Test, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215000 (China)] [Platform of Characterization and Test, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215000 (China); Luo, Yi [Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Tsinghua University, Beijing 100084 (China)] [Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Tsinghua University, Beijing 100084 (China)

    2013-12-09T23:59:59.000Z

    We reported a high-efficiency and low-cost nano-pattern method, the nanospherical-lens photolithography technique, to fabricate a SiO{sub 2} mask for selective area growth. By controlling the selective growth, we got a highly ordered hexagonal nanopyramid light emitting diodes with InGaN/GaN quantum wells grown on nanofacets, demonstrating an electrically driven phosphor-free white light emission. We found that both the quantum well width and indium incorporation increased linearly along the (101{sup ¯}1) planes towards the substrate and the perpendicular direction to the (101{sup ¯}1) planes as well. Such spatial distribution was responsible for the broadband emission. Moreover, using cathodoluminescence techniques, it was found that the blue emission originated from nanopyramid top, resembling the quantum dots, green emission from the InGaN quantum wells layer at the middle of sidewalls, and yellow emission mainly from the bottom of nanopyramid ridges, similar to the quantum wires.

  11. July 18, 2012 Using QECBs for Street Lighting Upgrades

    E-Print Network [OSTI]

    lighting technologies (e.g. light-emitting diodes, induction lighting) can reduce street light energy

  12. Energy Savings Potential for Street Lighting in India

    E-Print Network [OSTI]

    Johnson, Alissa K.

    2014-01-01T23:59:59.000Z

    M. B. Kostic, “Light-emitting diodes in street and roadwayCompact fluorescent Light emitting diode High intensityCompact fluorescent Light emitting diode Mercury Vapor High

  13. avalanche diode array: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Array and Graphene Hybrid Light Emitting Diodes Jung Min Lee, Jae a class of light emitting diode (LED) with interesting mechanical, optical, and electrical characteristics,...

  14. The Spectrum of Clean Energy Innovationinnovati nGreen Light-Emitting Diode Makes

    E-Print Network [OSTI]

    in the indoor lighting world. LEDs are fundamentally solar cells operating in reverse--that is, when of light generated far outweighs the amount of heat produced. But at the moment, LEDs that emit white light are produced using an inefficient process known as phosphor conversion. In this process, light from a blue

  15. 2014 Solid-State Lighting Manufacturing R&D Workshop Presentations...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    for Low-Cost Manufacturing of OLED Lighting John Hamer, OLEDWorks Large-Area Integrated Substrate for OLED Lighting Cheng-Hung Hung, PPG Industries Day 2 LED Lighting Global...

  16. Demonstration Assessment of Light Emitting Diode (LED) Walkway Lighting at the Federal Aviation Administration William J. Hughes Technical Center, in Atlantic City, New Jersey

    SciTech Connect (OSTI)

    Kinzey, Bruce R.; Myer, Michael

    2008-03-18T23:59:59.000Z

    This report documents the results of a collaborative project to demonstrate a solid state lighting (SSL) general illumination product in an outdoor area walkway application. In the project, six light-emitting diode (LED) luminaires were installed to replace six existing high pressure sodium (HPS) luminaires mounted on 14-foot poles on a set of exterior walkways and stairs at the Federal Aviation Administration (FAA) William J. Hughes Technical Center in Atlantic City, New Jersey, during December, 2007. The effort was a U.S. Department of Energy (DOE) SSL Technology Gateway Demonstration that involved a collaborative teaming agreement between DOE, FAA and Ruud Lighting (and their wholly owned division, Beta LED). Pre- and post-installation power and illumination measurements were taken and used in calculations of energy savings and related economic payback, while personnel impacted by the new lights were provided questionnaires to gauge their perceptions and feedback. The SSL product demonstrated energy savings of over 25% while maintaining illuminance levels and improving illuminance uniformity. PNNL's economic analysis yielded a variety of potential payback results depending on the assumptions used. In the best case, replacing HPS with the LED luminaire can yield a payback as low as 3 years. The new lamps were quite popular with the affected personnel, who gave the lighting an average score of 4.46 out of 5 for improvement.

  17. Efficiency Improvement Opportunities for Personal Computer Monitors: Implications for Market Transformation Programs

    E-Print Network [OSTI]

    Park, Won Young

    2013-01-01T23:59:59.000Z

    crystal display LED light emitting diode MEPS minimum energyOLED organic light emitting diode PC personal computer PDPdisplay (LCD) to light emitting diode (LED) backlit LCD

  18. Materials Research Lab -Research Internships in Science and Engineering http://www.mrl.ucsb.edu/mrl/outreach/educational/RISE/interns03.html[5/10/12 9:53:34 AM

    E-Print Network [OSTI]

    Bigelow, Stephen

    and Biochemsitry Organic light emitting diode (OLED) synthesis Information and Safety Research Facilities Education

  19. 124 Department of Chemistry Graduate Catalogue 201314

    E-Print Network [OSTI]

    Shihadeh, Alan

    -deficient materials for organic electronics and opto-electronics applications; organic light emitting diodes (OLEDs

  20. Energy-Efficient Graphical User Interface Design Keith S. Vallerio Member, IEEE,, Lin Zhong Student Member, IEEE, and Niraj K. Jha Fellow, IEEE,

    E-Print Network [OSTI]

    Zhong, Lin

    . consumption. Researchers at HP Labs have investigated how future organic light-emitting diodes (OLED) based

  1. Peripherally Inserted Central Catheter PlacementWith the Sonic Flashlight

    E-Print Network [OSTI]

    Stetten, George

    , interventional radiology; IV, intravenous; OLED, organic light-emitting diode; PICC, peripherally inserted

  2. Chemistry Department 2013 Summer Research Program

    E-Print Network [OSTI]

    (PMDs). Such devices include dye sensitized solar cells (DSSCs), organic light emitting diodes (OLEDs

  3. Chemistry Department 2012 Summer Research Program

    E-Print Network [OSTI]

    (PMDs). Such devices include dye sensitized solar cells (DSSCs), organic light emitting diodes (OLEDs

  4. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode

    SciTech Connect (OSTI)

    Mehta, M.; Michaelis de Vasconcellos, S.; Zrenner, A.; Meier, C. [Department of Physics and Center for Optoelectronics and Photonics Paderborn (CeOPP), University of Paderborn, Warburger Street 100, 33098 Paderborn (Germany); Reuter, D.; Wieck, A. D. [Applied Solid State Physics, Ruhr-University of Bochum, Universitaetsstr. 150, 44780 Bochum (Germany)

    2010-10-04T23:59:59.000Z

    We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski-Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.

  5. WHITE ORGANIC LIGHT-EMITTING DIODES USING 1,1,2,3,4,5-HEXAPHENYLSILOLE (HPS) AS GREENISH-BLUE EMITTER

    E-Print Network [OSTI]

    WHITE ORGANIC LIGHT-EMITTING DIODES USING 1,1,2,3,4,5- HEXAPHENYLSILOLE (HPS) AS GREENISH-BLUE emitter and the 1,1,2,3,4,5- hexaphenylsilole (HPS) layer was used as the greenish- blue emitter. White of 160cd/m2 . This high efficiency was attributed to the highly efficient greenish- blue emitter-1

  6. Amber-green light-emitting diodes using order-disorder Al[subscript x]In[subscript 1?x]P heterostructures

    E-Print Network [OSTI]

    Christian, Theresa M.

    We demonstrate amber-green emission from Al[subscript x]In[subscript 1– x]P light-emitting diodes (LEDs) with luminescence peaked at 566?nm and 600?nm. The LEDs are metamorphically grown on GaAs substrates via a graded ...

  7. Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN

    E-Print Network [OSTI]

    Wang, Zhong L.

    Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN of metal organic chemical vapor deposition (MOCVD), gallium nitride (GaN) has become the most important GaN nanowires (NWs) have also been fabricated, and nanoLEDs are an active field of research.[5

  8. Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Dai, Qi; Shan, Qifeng; Wang, Jing; Chhajed, Sameer; Cho, Jaehee; Schubert, E. Fred; Crawford, Mary H.; Koleske, Daniel D.; Kim, Min-Ho; Park, Yongjo

    2010-01-01T23:59:59.000Z

    We model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as R=An+Bn{sup 2} +Cn{sup 3} +f(n) , where f(n) represents carrier leakage out of the active region. The term f(n) is expanded into a power series and shown to have higher-than-third-order contributions to the recombination. The total third-order nonradiative coefficient (which may include an f(n) leakage contribution and an Auger contribution) is found to be 8×10{sup ?29} ?cm{sup 6} ?s{sup ?1} . Comparison of the theoretical ABC+f(n) model with experimental data shows that a good fit requires the inclusion of the f(n) term.

  9. Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption

    SciTech Connect (OSTI)

    Du, Chunhua; Ma, Ziguang; Zhou, Junming; Lu, Taiping; Jiang, Yang; Zuo, Peng; Jia, Haiqiang; Chen, Hong, E-mail: hchen@iphy.ac.cn [Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-08-18T23:59:59.000Z

    We studied the effect of multiple interruptions during the quantum well growth on emission-efficiency enhancement of InGaN-based yellow-green light emitting diodes on c-plane sapphire substrate. The output power and dominant wavelength at 20?mA are 0.24 mW and 556.3?nm. High resolution x-ray diffraction, photoluminescence, and electroluminescence measurements demonstrate that efficiency enhancement could be partially attributed to crystal quality improvement of the active region resulted from reduced In clusters and relevant defects on the surface of InGaN layer by introducing interruptions. The less tilted energy band in the quantum well is also caused by the decrease of In-content gradient along c-axis resulted from In segregation during the interruptions, which increases spatial overlap of electron-hole wavefunction and thus the internal quantum efficiency. The latter also leads to smaller blueshift of dominant wavelength with current increasing.

  10. Highly efficient inverted top emitting organic light emitting diodes using a transparent top electrode with color stability on viewing angle

    SciTech Connect (OSTI)

    Kim, Jung-Bum; Lee, Jeong-Hwan; Moon, Chang-Ki; Kim, Jang-Joo, E-mail: jjkim@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of)

    2014-02-17T23:59:59.000Z

    We report a highly efficient phosphorescent green inverted top emitting organic light emitting diode with excellent color stability by using the 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile/indium zinc oxide top electrode and bis(2-phenylpyridine)iridium(III) acetylacetonate as the emitter in an exciplex forming co-host system. The device shows a high external quantum efficiency of 23.4% at 1000?cd/m{sup 2} corresponding to a current efficiency of 110?cd/A, low efficiency roll-off with 21% at 10?000?cd/m{sup 2} and low turn on voltage of 2.4?V. Especially, the device showed very small color change with the variation of ?x?=?0.02, ?y?=?0.02 in the CIE 1931 coordinates as the viewing angle changes from 0° to 60°. The performance of the device is superior to that of the metal/metal cavity structured device.

  11. Differential spectral responsivity measurement of photovoltaic detectors with a light-emitting-diode-based integrating sphere source

    SciTech Connect (OSTI)

    Zaid, Ghufron; Park, Seung-Nam; Park, Seongchong; Lee, Dong-Hoon

    2010-12-10T23:59:59.000Z

    We present an experimental realization of differential spectral responsivity measurement by using a light-emitting diode (LED)-based integrating sphere source. The spectral irradiance responsivity is measured by a Lambertian-like radiation field with a diameter of 40mm at the peak wavelengths of the 35 selectable LEDs covering a range from 280 to 1550nm. The systematic errors and uncertainties due to lock-in detection, spatial irradiance distribution, and reflection from the test detector are experimentally corrected or considered. In addition, we implemented a numerical procedure to correct the error due to the broad spectral bandwidth of the LEDs. The overall uncertainty of the DSR measurement is evaluated to be 2.2% (k=2) for Si detectors. To demonstrate its application, we present the measurement results of two Si photovoltaic detectors at different bias irradiance levels up to 120mW/cm{sup 2}.

  12. Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode

    SciTech Connect (OSTI)

    Kang, Jang-Won; Choi, Yong-Seok; Goo Kang, Chang; Hun Lee, Byoung [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Kim, Byeong-Hyeok [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407 (United States); Park, Seong-Ju, E-mail: sjpark@gist.ac.kr [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

    2014-02-03T23:59:59.000Z

    We report on ultraviolet emission from a multi-layer graphene (MLG)/MgZnO/ZnO light-emitting diodes (LED). The p-type MLG and MgZnO in the MLG/MgZnO/ZnO LED are used as transparent hole injection and electron blocking layers, respectively. The current-voltage characteristics of the MLG/MgZnO/ZnO LED show that current transport is dominated by tunneling processes in the MgZnO barrier layer under forward bias conditions. The holes injected from p-type MLG recombine efficiently with the electrons accumulated in ZnO, and the MLG/MgZnO/ZnO LED shows strong ultraviolet emission from the band edge of ZnO and weak red-orange emission from the deep levels of ZnO.

  13. ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition

    SciTech Connect (OSTI)

    Xu, W.Z.; Ye, Z.Z.; Zeng, Y.J.; Zhu, L.P.; Zhao, B.H.; Jiang, L.; Lu, J.G.; He, H.P.; Zhang, S.B. [State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2006-04-24T23:59:59.000Z

    We report a breakthrough in fabricating ZnO homojunction light-emitting diode by metal organic chemical vapor deposition. Using NO plasma, we are able to grow p-type ZnO thin films on n-type bulk ZnO substrates. The as-grown films on glass substrates show hole concentration of 10{sup 16}-10{sup 17} cm{sup -3} and mobility of 1-10 cm{sup 2} V{sup -1} s{sup -1}. Room-temperature photoluminescence spectra reveal nitrogen-related emissions. A typical ZnO homojunction shows rectifying behavior with a turn-on voltage of about 2.3 V. Electroluminescence at room temperature has been demonstrated with band-to-band emission at I=40 mA and defect-related emissions in the blue-yellow spectrum range.

  14. Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires

    SciTech Connect (OSTI)

    Musolino, M., E-mail: musolino@pdi-berlin.de; Tahraoui, A.; Limbach, F.; Lähnemann, J.; Jahn, U.; Brandt, O.; Geelhaar, L.; Riechert, H. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D-10117 Berlin (Germany)

    2014-08-25T23:59:59.000Z

    We investigate the effect of the p-type top contact on the optoelectronic characteristics of light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. We compare devices fabricated with either Ni/Au or indium tin oxide (ITO) top contact. The NW-LEDs with ITO exhibit a number density of NWs emitting electroluminescence about ten times higher, significantly lower turn-on voltage and series resistance, and a relative external quantum efficiency more than one order of magnitude higher than the sample with Ni/Au. These results show that limitations in the performance of such devices reported so far can be overcome by improving the p-type top-contact.

  15. High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

    SciTech Connect (OSTI)

    Chang, Chiao-Yun; Li, Hen; Lu, Tien-Chang, E-mail: timtclu@mail.nctu.edu.tw [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300 (China)

    2014-03-03T23:59:59.000Z

    In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20?mA and a 27.0% efficiency droop at 100?mA (corresponding to a current density of 69?A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.

  16. Preparation of CaO as OLED getter material through control of crystal growth of CaCO{sub 3} by block copolymers in aqueous solution

    SciTech Connect (OSTI)

    Park, Jae-Hyung [Department of Chemical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Oh, Seong-Geun [Department of Chemical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)], E-mail: seongoh@hanyang.ac.kr

    2009-01-08T23:59:59.000Z

    As the starting materials of organic light-emitting diode (OLED) getter, calcium carbonate (CaCO{sub 3}) particles with various shapes and crystal structures have been successfully prepared with additives (L64 or PEGPG), which contain blocks of poly(ethylene oxide) (PEO) and poly(propylene oxide) (PPO). These CaCO{sub 3} particles were calcinated into highly crystalline calcium oxide (CaO) nanoparticles with high capacity of water adsorption up to 14.23 wt.%. The CaCO{sub 3} and CaO particles prepared at various conditions were characterized using the field emission scanning electron microscopy (FE-SEM), Fourier transform infrared microscopy (FT-IR), X-ray powder diffraction (XRD), and dynamic vapor sorption (DVS) method.

  17. area diode laser: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laser Diode Operates similar to a Light Emitting DiodeOperates similar to a Light Emitting Diode Active medium is a semiconductor pActive medium is a semiconductor p--n...

  18. assisted diode laser: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laser Diode Operates similar to a Light Emitting DiodeOperates similar to a Light Emitting Diode Active medium is a semiconductor pActive medium is a semiconductor p--n...

  19. Layering Mismatched Lattices Creates Long-Sought-After Green Light-Emitting Diode (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2011-02-01T23:59:59.000Z

    Scientists at the National Renewable Energy Laboratory (NREL) invent a deep green LED that can lead to higher-efficiency white light, lower electric bills.

  20. Enhanced luminance of organic light-emitting diodes with metal nanoparticle electron injection layer

    E-Print Network [OSTI]

    Liu, Deang; Fina, Michael; Ren, Li; Mao, Samuel S.

    2009-01-01T23:59:59.000Z

    electron injection and luminance characteristics. The small009-5199-x Enhanced luminance of organic light-emittinglayer. Improved current and luminance characteristics were

  1. Development of monolithic CMOS-compatible visible light emitting diode arrays on silicon

    E-Print Network [OSTI]

    Chilukuri, Kamesh

    2006-01-01T23:59:59.000Z

    The synergies associated with integrating Si-based CMOS ICs and III-V-material-based light-emitting devices are very exciting and such integration has been an active area of research and development for quite some time ...

  2. Photonic crystal light emitting diode based on Er and Si nanoclusters co-doped slot waveguide

    SciTech Connect (OSTI)

    Lo Savio, R.; Galli, M.; Liscidini, M.; Andreani, L. C. [Dipartimento di Fisica, Università di Pavia, Via Bassi 6, 27100 Pavia (Italy); Franzò, G.; Iacona, F.; Miritello, M. [MATIS-IMM CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Irrera, A. [CNR-IPCF, Viale Ferdinando Stagno d'Alcontres 37, 98158 Messina (Italy); Sanfilippo, D.; Piana, A. [ST Microelectronics, Stradale Primosole 50, 95121 Catania (Italy); Priolo, F. [MATIS-IMM CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Scuola Superiore di Catania, Università di Catania, Via Valdisavoia 9, 95123 Catania (Italy)

    2014-03-24T23:59:59.000Z

    We report on the design, fabrication, and electro-optical characterization of a light emitting device operating at 1.54??m, whose active layer consists of silicon oxide containing Er-doped Si nanoclusters. A photonic crystal (PhC) is fabricated on the top-electrode to enhance the light extraction in the vertical direction, and thus the external efficiency of the device. This occurs if a photonic mode of the PhC slab is resonant with the Er emission energy, as confirmed by theoretical calculations and experimental analyses. We measure an increase of the extraction efficiency by a factor of 3 with a high directionality of light emission in a narrow vertical cone. External quantum efficiency and power efficiency are among the highest reported for this kind of material. These results are important for the realization of CMOS-compatible efficient light emitters at telecom wavelengths.

  3. Comparing directed efficiency of III-nitride nanowire light-emitting diodes

    E-Print Network [OSTI]

    Gradecak, Silvija

    III-nitride-based nanowires are a promising platform for solid-state lighting. III-nitride nanowires that act as natural waveguides to enhance directed extraction have previously been shown to be free of extended defects ...

  4. Demonstration Assessment of Light Emitting Diode (LED) Residential Downlights and Undercabinet Lights in the Lane County Tour of Homes, Eugene, Oregon

    SciTech Connect (OSTI)

    Ton, My K.; Richman, Eric E.; Gilbride, Theresa L.

    2008-11-10T23:59:59.000Z

    In August 2008 the Pacific Northwest National Laboratory (PNNL) conducted a light emitting diode (LED) residential lighting demonstration project for the U.S. Department of Energy (DOE), Office of Building Technologies, as part of DOE’s Solid State Lighting (SSL) Technology Demonstration Gateway Program. Two lighting technologies, an LED replacement for downlight lamps (bulbs) and an LED undercabinet lighting fixture, were tested in the demonstration which was conducted in two homes built for the 2008 Tour of Homes in Eugene, Oregon. The homes were built by the Lane County Home Builders Association (HBA), and Future B Homes. The Energy Trust of Oregon (ETO) also participated in the demonstration project. The LED downlight product, the LR6, made by Cree LED Lighting Solutions acts as a screw-in replacement for incandescent and halogen bulbs in recessed can downlights. The second product tested is Phillips/Color Kinetics’ eW® Profile Powercore undercabinet fixture designed to mount under kitchen cabinets to illuminate the countertop and backsplash surfaces. Quantitative and qualitative measurements of light performance and electrical power usage were taken at each site before and after initially installed halogen and incandescent lamps were replaced with the LED products. Energy savings and simple paybacks were also calculated and builders who toured the homes were surveyed for their responses to the LED products. The LED downlight product drew 12 Watts of power, cutting energy use by 82% compared to the 65W incandescent lamp and by 84% compared to the 75W halogen lamp. The LED undercabinet fixture drew 10 watts, cutting energy use by 83% to 90% compared to the halogen product, which was tested at two power settings: a low power 60W setting and a high power 105W setting. The LED downlight consistently provided more light than the halogen and incandescent lamps in horizontal measurements at counter height and floor level. It also outperformed in vertical illuminance measurements taken on the walls, indicating better lateral dispersion of the light. The undercabinet fixture’s light output was midway between the low and high power halogen undercabinet fixture light outputs (35.8 foot candle versus 13.4 fc and 53.4 fc) but it produced a more uniform light (max/min ratio of 7.0 versus 10.8). The color correlated temperature (CCT, the blue or yellowness) of the LED light correlated well with the halogen and incandescent lights (2675 K vs 2700 K). The color rendering of the LED downlight also correlated well at 92 CRI compared to 100 CRI for the halogen and incandescent lamps. The LED undercabinet fixture had measures of 2880 K CCT and 71 CRI compared to the 2700 K and 100 CRI scores for the halogen undercabinet fixture. Builders who toured the homes were surveyed; they gave the LED downlight high marks for brightness, said the undercabinet improved shadows and glare and said both products improved overall visibility, home appearance, and home value. Paybacks on the LED downlight ranged from 7.6 years (assuming electricity cost of 11 c/kWh) to 13.5 years (at 5C/kWh). Paybacks on the LED undercabinet fixture in a new home ranged from 4.4 years (11c/kWh electricity) to 7.6 years (5c/kWh) based on product costs of $95 per LED downlight and $140 per LED undercabinet fixture at 3 hrs per day of usage for the downlight and 2 hrs per day for the undercabinet lighting.

  5. Light emitting diode with porous SiC substrate and method for fabricating

    DOE Patents [OSTI]

    Li, Ting; Ibbetson, James; Keller, Bernd

    2005-12-06T23:59:59.000Z

    A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of semiconductor material. The electrolyte is heated and a bias is introduced across said electrolyte and the semiconductor material causing a current to flow between the electrolyte and the semiconductor material. The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte. The semiconductor material with its porous layer can serve as a substrate for a light emitter. A semiconductor emission region can be formed on the substrate. The emission region is capable of emitting light omnidirectionally in response to a bias, with the porous layer enhancing extraction of the emitting region light passing through the substrate.

  6. Demonstration Assessment of Light-Emitting Diode (LED) Roadway Lighting at the I-35W Bridge, Minneapolis, MN

    SciTech Connect (OSTI)

    Kinzey, Bruce R.; Myer, Michael

    2009-08-31T23:59:59.000Z

    This report describes the process and results of a demonstration of solid-state lighting (SSL) technology conducted in 2009 at the recently reconstructed I-35W bridge in Minneapolis, MN. The project was supported under the U.S. Department of Energy (DOE) Solid-State Lighting GATEWAY Technology Demonstration Program. Other participants in the demonstration project included the Minnesota Department of Transportation (Mn/DOT), Federal Highways Administration (FHWA), and BetaLED™ (a division of Ruud Lighting). Pacific Northwest National Laboratory (PNNL) conducted the measurements and analysis of the results. DOE has implemented a three-year evaluation of the LED luminaires in this installation in order to develop new longitudinal field data on LED performance in a challenging, real-world environment. This document provides information through the initial phase of the I-35W bridge project, up to and including the opening of the bridge to the public and the initial feedback received on the LED lighting installation from bridge users. Initial findings of the evaluation are favorable, with minimum energy savings level of 13% for the LED installation relative to the simulated base case using 250W high-pressure sodium (HPS) fixtures. The LEDs had an average illuminance level of 0.91 foot candles compared to 1.29 fc for the HPS lamps. The LED luminaires cost $38,000 more than HPS lamps, yielding a lengthy payback period, however the bridge contractor had offered to include the LED luminaires as part of the construction package at no additional cost. One potentially significant benefit of the LEDs in this installation is avoiding rolling lane closures on the heavily-traveled interstate bridge for the purpose of relamping the HPS fixtures. Rolling lane closures involve multiple crew members and various maintenance and safety vehicles, diversion of traffic, as well as related administrative tasks (e.g., approvals, scheduling, etc.). Mn/DOT records show an average cost of relamping fixtures along interstate roadways of between $130-150 per pole. The previous bridge saw a lamp mortality rate of approximately 50% every two years, though the new bridge was designed to minimize many of the vibration issues. A voluntary Web-based feedback survey of nearly 500 self-described bridge users showed strong preference for the LED lighting - positive comments outnumbered negative ones by about five-to-one.

  7. Materials for solid state lighting

    SciTech Connect (OSTI)

    Johnson, S.G.; Simmons, J.A.

    2002-03-26T23:59:59.000Z

    Dramatic improvement in the efficiency of inorganic and organic light emitting diodes (LEDs and OLEDs) within the last decade has made these devices viable future energy efficient replacements for current light sources. However, both technologies must overcome major technical barriers, requiring significant advances in material science, before this goal can be achieved. Attention will be given to each technology associated with the following major areas of material research: (1) material synthesis, (2) process development, (3) device and defect physics, and (4) packaging. The discussion on material synthesis will emphasize the need for further development of component materials, including substrates and electrodes, necessary for improving device performance. The process technology associated with the LEDs and OLEDs is very different, but in both cases it is one factor limiting device performance. Improvements in process control and methodology are expected to lead to additional benefits of higher yield, greater reliability and lower costs. Since reliability and performance are critical to these devices, an understanding of the basic physics of the devices and device failure mechanisms is necessary to effectively improve the product. The discussion will highlight some of the more basic material science problems remaining to be solved. In addition, consideration will be given to packaging technology and the need for the development of novel materials and geometries to increase the efficiencies and reliability of the devices. The discussion will emphasize the performance criteria necessary to meet lighting applications, in order to illustrate the gap between current status and market expectations for future product.

  8. Efficient narrow-band light emission from a single carbon nanotube pn diode

    E-Print Network [OSTI]

    Perebeinos, Vasili

    of up to 1,000, and resulting in zero threshold current, negligible self-heating and high carrier and Phaedon Avouris1 * Electrically driven light emission from carbon nanotubes1­8 could be used in nanoscale electric fields and currents have either been necessary for electroluminescence4­8 , or have been an unde

  9. alternative graphical displays: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Graphical User Interfaces on OLED Displays CiteSeer Summary: Emerging organic light-emitting diode (OLED)-based displays obviate external lighting; and consume drastically...

  10. Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

    E-Print Network [OSTI]

    Shakoor, A; Cardile, P; Portalupi, S L; Gerace, D; Welna, K; Boninelli, S; Franzo, G; Priolo, F; Krauss, T F; Galli, M; Faolain, L O

    2013-01-01T23:59:59.000Z

    Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300- 1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enahnce the electrically driven emission in a device via Purcell effect. A narrow ({\\Delta}{\\lambda} = 0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4 mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects a...

  11. Electrical, optical, and material characterizations of blue InGaN light emitting diodes submitted to reverse-bias stress in water vapor condition

    SciTech Connect (OSTI)

    Chen, Hsiang, E-mail: hchen@ncnu.edu.tw; Chu, Yu-Cheng; Chen, Yun-Ti; Chen, Chian-You [Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, University Road, Puli, Nantou County 54561, Taiwan (China); Shei, Shih-Chang [Department of Electrical Engineering, National University of Tainan, No.33, Sec. 2, Shulin St., West Central Dist., Tainan City 70005, Taiwan (China)

    2014-09-07T23:59:59.000Z

    In this paper, we investigate degradation of InGaN/GaN light emitting diodes (LEDs) under reverse-bias operations in water vapor and dry air. To examine failure origins, electrical characterizations including current-voltage, breakdown current profiles, optical measurement, and multiple material analyses were performed. Our findings indicate that the diffusion of indium atoms in water vapor can expedite degradation. Investigation of reverse-bias stress can help provide insight into the effects of water vapor on LEDs.

  12. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing://scitation.aip.org/content/aip/journal/apl/105/3?ver=pdfcov Published by the AIP Publishing Articles you may be interested in High efficiency InGaN/GaN (2014); 10.1063/1.4867023 Effect of V-defects on the performance deterioration of InGaN/GaN multiple

  13. Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells

    E-Print Network [OSTI]

    Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN based on radial p­i­n multi quantum well (QW) junctions have been realized from GaN wires grown by catalyst- free metal organic vapor phase epitaxy. The Inx Ga1Àx N/GaN undoped QW system is coated over both

  14. Highly-selective wettability on organic light-emitting-diodes patterns by sequential low-power plasmas

    SciTech Connect (OSTI)

    Svarnas, P.; Edwards, A. J.; Bradley, J. W. [Department of Electrical Engineering and Electronics, Technological Plasmas Group, University of Liverpool, Merseyside L69 3GJ (United Kingdom); Yang, L.; Munz, M.; Shard, A. G. [Analytical Science Division, National Physical Laboratory (NPL), Hampton Road, Teddington, Middlesex TW11 0LW (United Kingdom)

    2010-05-15T23:59:59.000Z

    Patterned organic light-emitting-diode substrates were treated by oxygen (O{sub 2}) and tetrafluoromethane (CF{sub 4}) radio-frequency (rf, 13.56 MHz) plasmas of low-power (close to 1 W) that were capacitively-coupled. An unexpected wettability contrast (water contact angle difference up to 90 deg. ) between the indium-tin-oxide anode and the bank resist regions was achieved, providing excellent conditioning prior to the ink-jet printing. This selectivity was found to be adjustable by varying the relative exposure time to the O{sub 2} and CF{sub 4} sequential plasmas. Static contact angle measurements and extensive x-ray photoelectron spectroscopy analyses showed that the wetting properties depend on the carbon and fluorine chemical functional groups formed at the outermost surface layers, whereas atomic force microscopy images did not show a morphological change. Plasma optical emission spectroscopy and ion mass spectroscopy suggested that surface functionalization was initiated by energy transfer from ionic species (O{sup +}, O{sub 2}{sup +}, CF{sup +}, CF{sub 2}{sup +}, and CF{sub 3}{sup +}) and excited neutrals (O{sup *} and F{sup *}). The absolute ion fluxes measured on the substrates were up to 10{sup 14} cm{sup -2} s{sup -1} and the ion energies up to 20 eV, despite the low powers applied during the process.

  15. Efficient charge carrier injection into sub-250?nm AlGaN multiple quantum well light emitting diodes

    SciTech Connect (OSTI)

    Mehnke, Frank, E-mail: mehnke@physik.tu-berlin.de; Kuhn, Christian; Guttmann, Martin; Reich, Christoph; Kolbe, Tim; Rass, Jens; Wernicke, Tim [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Kueller, Viola; Knauer, Arne; Lapeyrade, Mickael; Einfeldt, Sven; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, Michael [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2014-08-04T23:59:59.000Z

    The design and Mg-doping profile of AlN/Al{sub 0.7}Ga{sub 0.3}N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250?nm was investigated. By inserting an AlN electron blocking layer (EBL) into the EBH, we were able to increase the quantum well emission power and significantly reduce long wavelength parasitic luminescence. Furthermore, electron leakage was suppressed by optimizing the thickness of the AlN EBL while still maintaining sufficient hole injection. Ultraviolet (UV)-C LEDs with very low parasitic luminescence (7% of total emission power) and external quantum efficiencies of 0.19% at 246?nm have been realized. This concept was applied to AlGaN MQW LEDs emitting between 235?nm and 263?nm with external quantum efficiencies ranging from 0.002% to 0.93%. After processing, we were able to demonstrate an UV-C LED emitting at 234?nm with 14.5??W integrated optical output power and an external quantum efficiency of 0.012% at 18.2?A/cm{sup 2}.

  16. Pressure-assisted fabrication of organic light emitting diodes with MoO{sub 3} hole-injection layer materials

    SciTech Connect (OSTI)

    Du, J. [The Princeton Institute for the Science and Technology of Materials (PRISM), Princeton, New Jersey 08544 (United States); Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544 (United States); Anye, V. C.; Vodah, E. O. [Department of Materials Science and Engineering, African University of Science and Technology, Abuja, Federal Capital Territory (Nigeria); Tong, T. [The Princeton Institute for the Science and Technology of Materials (PRISM), Princeton, New Jersey 08544 (United States); Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 (United States); Zebaze Kana, M. G. [Physics Advanced Laboratory, Sheda Science and Technology Complex, Abuja, Federal Capital Territory (Nigeria); Department of Materials Science and Engineering, Kwara State University, Kwara State (Nigeria); Soboyejo, W. O. [The Princeton Institute for the Science and Technology of Materials (PRISM), Princeton, New Jersey 08544 (United States); Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544 (United States); Department of Materials Science and Engineering, African University of Science and Technology, Abuja, Federal Capital Territory (Nigeria)

    2014-06-21T23:59:59.000Z

    In this study, pressures of ?5 to ?8?MPa were applied to organic light emitting diodes containing either evaporated molybdenum trioxide (MoO{sub 3}) or spin-coated poly(3,4-ethylene dioxythiophene) doped with poly(styrene sulphonate) (PEDOT:PSS) hole-injection layers (HILs). The threshold voltages for both devices were reduced by about half, after the application of pressure. Furthermore, in an effort to understand the effects of pressure treatment, finite element simulations were used to study the evolution of surface contact between the HIL and emissive layer (EML) under pressure. The blister area due to interfacial impurities was also calculated. This was shown to reduce by about half, when the applied pressures were between ?5 and 8?MPa. The finite element simulations used Young's modulus measurements of MoO{sub 3} that were measured using the nanoindentation technique. They also incorporated measurements of the adhesion energy between the HIL and EML (measured by force microscopy during atomic force microscopy). Within a fracture mechanics framework, the implications of the results are then discussed for the pressure-assisted fabrication of robust organic electronic devices.

  17. Polarity dependence of the electrical characteristics of Ag reflectors for high-power GaN-based light emitting diodes

    SciTech Connect (OSTI)

    Park, Jae-Seong; Seong, Tae-Yeon, E-mail: tyseong@korea.ac.kr [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Han, Jaecheon [Department of LED Business, Chip Development Group, LG Innotek, Paju 413-901 (Korea, Republic of); Ha, Jun-Seok [School of Applied Chemical Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of)

    2014-04-28T23:59:59.000Z

    We report on the polarity dependence of the electrical properties of Ag reflectors for high-power GaN-based light-emitting diodes. The (0001) c-plane samples become ohmic after annealing in air. However, the (11–22) semi-polar samples are non-ohmic after annealing, although the 300?°C-annealed sample shows the lowest contact resistivity. The X-ray photoemission spectroscopy (XPS) results show that the Ga 2p core level for the c-plane samples experiences larger shift toward the valence band than that for the semi-polar samples. The XPS depth profile results show that unlike the c-plane samples, the semi-polar samples contain some amounts of oxygen at the Ag/GaN interface regions. The outdiffusion of Ga atoms is far more significant in the c-plane samples than in the semi-polar samples, whereas the outdiffusion of N atoms is relatively less significant in the c-plane samples. On the basis of the electrical and XPS results, the polarity dependence of the electrical properties is described and discussed.

  18. Edge electroluminescence of the effective silicon point-junction light-emitting diode in the temperature range 80-300 K

    SciTech Connect (OSTI)

    Emel'yanov, A. M. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)], E-mail: Emelyanov@mail.ioffe.ru

    2008-11-15T23:59:59.000Z

    The edge electroluminescence spectra of silicon point-junction light-emitting diodes with a p-n junction area of 0.008 mm{sup 2} are studied at temperatures ranging from 80 to 300 K. Unprecedentedly high stability of the position of the spectral peak is observed at temperatures in the range between 130 and 300 K. The spectral characteristics of the light emitting diodes are studied at 80 K at different current densities up to 25 kA/cm{sup 2}. In contrast to the earlier reported data obtained at 300 K, the data obtained at 80 K do not show any noticeable Augerrecombination-related decrease in the quantum efficiency. From an analysis of the electroluminescence spectra at 80 K in a wide range of currents, it follows that radiative annihilation of free excitons is not a governing mechanism of electroluminescence in the entire emitting region in the base of the point-junction light-emitting diode at all currents used in the experiment.

  19. InGaN/GaN light-emitting diode with a polarization tunnel junction Zi-Hui Zhang, Swee Tiam Tan, Zabu Kyaw, Yun Ji, Wei Liu et al.

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    InGaN/GaN light-emitting diode with a polarization tunnel junction Zi-Hui Zhang, Swee Tiam Tan of AIP content is subject to the terms at: http://apl.aip.org/about/rights_and_permissions #12;InGaN/GaN; accepted 29 April 2013; published online 15 May 2013) We report InGaN/GaN light-emitting diodes (LED

  20. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer

  1. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current- spreading experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN

  2. Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes

    SciTech Connect (OSTI)

    Chung, Kunook; Beak, Hyeonjun; Tchoe, Youngbin; Oh, Hongseok; Yi, Gyu-Chul, E-mail: gcyi@snu.ac.kr [Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); Yoo, Hyobin; Kim, Miyoung [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of)

    2014-09-01T23:59:59.000Z

    We report the growth of GaN micro-rods and coaxial quantum-well heterostructures on graphene films, together with structural and optical characterization, for applications in flexible optical devices. Graphene films were grown on Cu foil by means of chemical vapor deposition, and used as the substrates for the growth of the GaN micro-rods, which were subsequently transferred onto SiO{sub 2}/Si substrates. Highly Si-doped, n-type GaN micro-rods were grown on the graphene films using metal–organic chemical vapor deposition. The growth and vertical alignment of the GaN micro-rods, which is a critical factor for the fabrication of high-performance light-emitting diodes (LEDs), were characterized using electron microscopy and X-ray diffraction. The GaN micro-rods exhibited promising photoluminescence characteristics for optoelectronic device applications, including room-temperature stimulated emission. To fabricate flexible LEDs, In{sub x}Ga{sub 1–x}N/GaN multiple quantum wells and a p-type GaN layer were deposited coaxially on the GaN micro-rods, and transferred onto Ag-coated polymer substrates using lift-off. Ti/Au and Ni/Au metal layers were formed to provide electrical contacts to the n-type and p-type GaN regions, respectively. The micro-rod LEDs exhibited intense emission of visible light, even after transfer onto the flexible polymer substrate, and reliable operation was achieved following numerous cycles of mechanical deformation.

  3. Stimulated emission in GaN-based laser diodes far below the threshold region

    E-Print Network [OSTI]

    2014-01-01T23:59:59.000Z

    forward current of light-emitting diodes,” J. Appl. Phys.superluminescent light-emitting diodes based on GaN,” Appl.superluminescent light emitting diode structures,” J. Appl.

  4. Measurement of the absorption coefficient for light laterally propagating in light-emitting diode structures with In{sub 0.2}Ga{sub 0.8}N/GaN quantum wells

    SciTech Connect (OSTI)

    Lelikov, Yu. S.; Bochkareva, N. I.; Gorbunov, R. I.; Martynov, I. A.; Rebane, Yu. T.; Tarkin, D. V.; Shreter, Yu. G. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)], E-mail: YShreter@mail.ioffe.ru

    2008-11-15T23:59:59.000Z

    A procedure for measuring the absorption coefficient for light propagating parallel to the surface of a GaN-based light emitting diode chip on a sapphire substrate is suggested. The procedure implies the study of emission from one end face of the chip as the opposite end face is illuminated with a light emitting diode. The absorption coefficient is calculated from the ratio between the intensities of emission emerging from the end faces of the sapphire substrate and the epitaxial layer. From the measurements for chips based on p-GaN/In{sub 0.2}Ga{sub 0.8}N/n-GaN structures, the lateral absorption coefficient is determined at a level of (23 {+-} 3)cm{sup -1} at a wavelength of 465 nm. Possible causes for the discrepancy between the absorption coefficients determined in the study and those reported previously are analyzed.

  5. SciTech Connect: "light emitting diodes"

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilAElectronicCurvesSpeedingScientificofRussellTenney,performance computing"light

  6. Electrophoretic Deposition of Highly Efficient Phosphors for White Solid State Lighting using near UV-Emitting LEDs /

    E-Print Network [OSTI]

    Choi, Jae Ik

    2014-01-01T23:59:59.000Z

    application in white light emitting diode,” J. Mater. Res. ,phosphors for white light emitting diodes (LEDs)”, 220 thconverted white light emitting diodes by electrophoretic

  7. Light emitting device having peripheral emissive region

    DOE Patents [OSTI]

    Forrest, Stephen R

    2013-05-28T23:59:59.000Z

    Light emitting devices are provided that include one or more OLEDs disposed only on a peripheral region of the substrate. An OLED may be disposed only on a peripheral region of a substantially transparent substrate and configured to emit light into the substrate. Another surface of the substrate may be roughened or include other features to outcouple light from the substrate. The edges of the substrate may be beveled and/or reflective. The area of the OLED(s) may be relatively small compared to the substrate surface area through which light is emitted from the device. One or more OLEDs also or alternatively may be disposed on an edge of the substrate about perpendicular to the surface of the substrate through which light is emitted, such that they emit light into the substrate. A mode expanding region may be included between each such OLED and the substrate.

  8. Bicolor Mn-doped CuInS{sub 2}/ZnS core/shell nanocrystals for white light-emitting diode with high color rendering index

    SciTech Connect (OSTI)

    Huang, Bo; Dai, Qian; Zhang, Huichao; Liao, Chen; Cui, Yiping; Zhang, Jiayu, E-mail: jyzhang@seu.edu.cn [Advanced Photonic Center, Southeast University, Nanjing 210096 (China); Zhuo, Ningze; Jiang, Qingsong; Shi, Fenghua; Wang, Haibo [Research Institute of Electric Light Source Materials, Nanjing University of Technology, Nanjing 210015 (China)

    2014-09-07T23:59:59.000Z

    We synthesized bicolor Mn-doped CuInS{sub 2} (CIS)/ZnS core/shell nanocrystals (NCs), in which Mn{sup 2+} ions and the CIS core were separated with a ZnS layer, and both Mn{sup 2+} ions and CIS cores could emit simultaneously. Transmission electron microscopy and powder X-ray diffraction measurements indicated the epitaxial growth of ZnS shell on the CuInS{sub 2} core, and electron paramagnetic resonance spectrum indicated that Mn{sup 2+} ions were on the lattice points of ZnS shell. By integrating these bicolor NCs with commercial InGaN-based blue-emitting diodes, tricolor white light-emitting diodes with color rendering index of 83 were obtained.

  9. Experimental and theoretical insights into the sequential oxidations of 3-2spiro molecules derived from oligophenylenes

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    been the design of efficient and stable blue light emitters for organic light-emitting diodes (OLED in organic light emitting diode (OLED) leading to violet to blue light emitting devices. [31

  10. Roll-To-Roll Process for Transparent Metal Electrodes in OLED Manufacturing

    SciTech Connect (OSTI)

    Slafer, W. Dennis

    2010-06-02T23:59:59.000Z

    This program will develop and demonstrate a new manufacturing technology that can help to improve the efficiency and reduce the cost of producing the next generation solid-state lighting (OLEDs)for a broad range of commercial applications. This will not only improve US competitiveness in the manufacturing sector but will also result in a positive impact in meeting the Department of Energy’s goal of developing high efficiency lighting while reducing the environmental impact.

  11. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

    2010-01-15T23:59:59.000Z

    The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

  12. Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions

    SciTech Connect (OSTI)

    Piprek, Joachim, E-mail: piprek@nusod.org [NUSOD Institute LLC, P.O. Box 7204, Newark, Delaware 19714 (United States)

    2014-02-03T23:59:59.000Z

    This Letter investigates the efficiency enhancement achieved by tunnel junction insertion into the InGaN/GaN multi-quantum well (MQW) active region of blue light emitting diodes (LEDs). The peak quantum efficiency of such LED exceeds 100%, but the maximum wall-plug efficiency (WPE) hardly changes. However, due to the increased bias, the WPE peaks at much higher input power, i.e., the WPE droop is significantly delayed, and the output power is strongly enhanced. The main physical reason for this improvement lies in the non-uniform vertical carrier distribution typically observed within InGaN MQWs.

  13. Effects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes

    SciTech Connect (OSTI)

    McBride, Patrick M.; Van de Walle, Chris G. [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States); Yan, Qimin [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States); Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2014-08-25T23:59:59.000Z

    We investigate the impact of incorporating realistic In profiles in simulations of c-plane InGaN/GaN light-emitting diodes. Simulations based on a drift-diffusion model typically overestimate the onset voltage, but have usually been based on the assumption of ideal quantum wells with a square In profile. We demonstrate that more realistic profiles lead to significant modifications of current-density-versus-voltage characteristics, and explain the effects based on changes in the band diagram and carrier overlap.

  14. LIGHT EMITTING DIODE

    E-Print Network [OSTI]

    High Output Power

    NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ±.010 (.25) on all non-nominal dimensions unless otherwise specified.

  15. algan-based laser diodes: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laser Diode Operates similar to a Light Emitting DiodeOperates similar to a Light Emitting Diode Active medium is a semiconductor pActive medium is a semiconductor p--n...

  16. Efficacy of 45 lm/W Achieved in White OLED

    Broader source: Energy.gov [DOE]

    Universal Display Corporation (UDC) successfully demonstrated an all phosphorescent white organic light emitting diode (WOLED™) with a power efficacy of 45 lm/W at 1,000 cd/m2. This high-efficacy device was enabled by lowering the device operating voltage, increasing the outcoupling efficiency to ~40% from ~20%, and by incorporating highly efficient phosphorescent emitters that are capable of converting nearly all current passing through a WOLED into light.

  17. Arnold Schwarzenegger LIGHTING RESEARCH PROGRAM

    E-Print Network [OSTI]

    Project Summaries ELEMENT 2: ADVANCE LIGHTING TECHNOLOGIES PROJECT 2.1 LIGHT EMITTING DIODE (LED light emitting diodes (LED) technology for general lighting applications by developing a task lamp

  18. advanced blue light: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of dental composites cured with blue light emitting diodes with either a light emitting diode (LED) based light curing unit (LCU) or a conventional halogen LCU do reserved....

  19. Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    -emitting diodes LEDs on low-defect density bulk GaN substrate, but not in green LEDs on sapphire substrate an ideal substrate for homoepitaxial growth. Here we study the microstructural properties of green GaInN/GaN-Koehler force10 resulting from a macroscopic relaxation of strain. II. CRYSTAL GROWTH c plane bulk GaN substrate

  20. LED Lighting Basics

    Broader source: Energy.gov [DOE]

    Light-Emitting diodes (LEDs) efficiently produce light in a fundamentally different way than any legacy or traditional source of light.

  1. Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

    SciTech Connect (OSTI)

    Verma, Jai, E-mail: jverma@nd.edu; Islam, S. M.; Protasenko, Vladimir; Kumar Kandaswamy, Prem; Xing, Huili; Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

    2014-01-13T23:59:59.000Z

    Efficient semiconductor optical emitters in the deep-ultraviolet spectral window are encountering some of the most deep rooted problems of semiconductor physics. In III-Nitride heterostructures, obtaining short-wavelength photon emission requires the use of wide bandgap high Al composition AlGaN active regions. High conductivity electron (n-) and hole (p-) injection layers of even higher bandgaps are necessary for electrical carrier injection. This approach requires the activation of very deep dopants in very wide bandgap semiconductors, which is a difficult task. In this work, an approach is proposed and experimentally demonstrated to counter the challenges. The active region of the heterostructure light emitting diode uses ultrasmall epitaxially grown GaN quantum dots. Remarkably, the optical emission energy from GaN is pushed from 365?nm (3.4?eV, the bulk bandgap) to below 240?nm (>5.2?eV) because of extreme quantum confinement in the dots. This is possible because of the peculiar bandstructure and band alignments in the GaN/AlN system. This active region design crucially enables two further innovations for efficient carrier injection: Tunnel injection of carriers and polarization-induced p-type doping. The combination of these three advances results in major boosts in electroluminescence in deep-ultraviolet light emitting diodes and lays the groundwork for electrically pumped short-wavelength lasers.

  2. Using interlayer step-wise triplet transfer to achieve an efficient white organic light-emitting diode with high color-stability

    SciTech Connect (OSTI)

    Wang, Qi [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin 130022 (China); Department of Electrical Engineering and Computer Sciences, College of Engineering, South Dakota State University, Brookings, South Dakota 57007 (United States); Ma, Dongge, E-mail: mdg1014@ciac.jl.cn; Ding, Junqiao; Wang, Lixiang [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin 130022 (China); Leo, Karl [Tech. Univ. Dresden, Inst. Angew. Photophys., D-01062 Dresden (Germany); Qiao, Qiquan [Department of Electrical Engineering and Computer Sciences, College of Engineering, South Dakota State University, Brookings, South Dakota 57007 (United States); Jia, Huiping; Gnade, Bruce E. [Department of Materials Science and Engineering and Erik Jonsson School of Engineering and Computer Science, University of Texas at Dallas, Richardson, Texas 75083 (United States)

    2014-05-12T23:59:59.000Z

    An efficient phosphorescent white organic light emitting-diode with a red-green-blue tri-emitting-layer structure is reported. The host of the red dopant possesses a lower triplet-energy than the green dye. An interlayer step-wise triplet transfer via blue dye ? green dye ? red host ? red dye is achieved. This mechanism allows an efficient triplet harvesting by the three dopants, thus maintaining a balanced white light and reducing energy loss. Moreover, the color stability of the device is improved significantly. The white device not only achieves a peak external quantum efficiency of 21.1?±?0.8% and power efficiency of 37.5?±?1.4?lm/W but shows no color shift over a wide range of voltages.

  3. Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

    SciTech Connect (OSTI)

    Liu, Zhaojun; Ma, Jun; Huang, Tongde; Liu, Chao; May Lau, Kei, E-mail: eekmlau@ust.hk [Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2014-03-03T23:59:59.000Z

    In this Letter, we report selective epitaxial growth of monolithically integrated GaN-based light emitting diodes (LEDs) with AlGaN/GaN high-electron-mobility transistor (HEMT) drivers. A comparison of two integration schemes, selective epitaxial removal (SER), and selective epitaxial growth (SEG) was made. We found the SER resulted in serious degradation of the underlying LEDs in a HEMT-on-LED structure due to damage of the p-GaN surface. The problem was circumvented using the SEG that avoided plasma etching and minimized device degradation. The integrated HEMT-LEDs by SEG exhibited comparable characteristics as unintegrated devices and emitted modulated blue light by gate biasing.

  4. Potential Environmental Impacts from the Metals in Incandescent, Compact Fluorescent Lamp (CFL), and Light-Emitting Diode (LED)

    E-Print Network [OSTI]

    Short, Daniel

    the lighting products are to be categorized as hazardous waste under existing U.S. federal and California state in lighting products without compromising their performance and useful lifespan. INTRODUCTION The U.S. Energy to increase energy efficiency for general lighting. Therefore, consumers are replacing incandescent light

  5. Stacked white OLED having separate red, green and blue sub-elements

    DOE Patents [OSTI]

    Forrest, Stephen; Qi, Xiangfei; Slootsky, Michael

    2014-07-01T23:59:59.000Z

    The present invention relates to efficient organic light emitting devices (OLEDs). The devices employ three emissive sub-elements, typically emitting red, green and blue, to sufficiently cover the visible spectrum. Thus, the devices may be white-emitting OLEDs, or WOLEDs. Each sub-element comprises at least one organic layer which is an emissive layer--i.e., the layer is capable of emitting light when a voltage is applied across the stacked device. The sub-elements are vertically stacked and are separated by charge generating layers. The charge-generating layers are layers that inject charge carriers into the adjacent layer(s) but do not have a direct external connection.

  6. Solution-Procesed Small-Molecule OLED Luminaire for Interior Illumination

    SciTech Connect (OSTI)

    Parker, Ian

    2012-02-29T23:59:59.000Z

    Prototype lighting panels and luminaires were fabricated using DuPont Displaysâ?? solution-processed small-molecule OLED technology. These lighting panels were based on a spatially-patterned, 3-color design, similar in concept to an OLED display panel, with materials chosen to maximize device efficacy. The majority of the processing steps take place in air (rather than high vacuum). Optimization of device architecture, processing and construction was undertaken, with a final prototype design of 50 cm{sup 2} being fabricated and tested. Performance of these panels reached 35 lm/W at illuminant-A. A unique feature of this technology is the ability to color tune the emission, and color temperatures ranging from 2700 to > 6,500K were attained in the final build. Significant attention was paid to low-cost fabrication techniques.

  7. Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography

    SciTech Connect (OSTI)

    Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Xiong, Zhuo; Shang, Liang; Tian, Yingdong; Zhao, Yun; Zhou, Pengyu; Wang, Junxi; Li, Jinmin [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-07-07T23:59:59.000Z

    The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6° through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350?mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.

  8. Further reduction of efficiency droop effect by adding a lower-index dielectric interlayer in a surface plasmon coupled blue light-emitting diode with surface metal nanoparticles

    SciTech Connect (OSTI)

    Lin, Chun-Han; Su, Chia-Ying; Chen, Chung-Hui; Yao, Yu-Feng; Shih, Pei-Ying; Chen, Horng-Shyang; Hsieh, Chieh; Kiang, Yean-Woei, E-mail: ywkiang@ntu.edu.tw; Yang, C. C., E-mail: ccycc@ntu.edu.tw [Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan (China); Kuo, Yang [Department of Energy and Refrigerating Air-Conditioning Engineering, Tung Nan University, 152 Beishen Road, Section 3, New Taipei City, 22202 Taiwan (China)

    2014-09-08T23:59:59.000Z

    Further reduction of the efficiency droop effect and further enhancements of internal quantum efficiency (IQE) and output intensity of a surface plasmon coupled, blue-emitting light-emitting diode (LED) by inserting a dielectric interlayer (DI) of a lower refractive index between p-GaN and surface Ag nanoparticles are demonstrated. The insertion of a DI leads to a blue shift of the localized surface plasmon (LSP) resonance spectrum and increases the LSP coupling strength at the quantum well emitting wavelength in the blue range. With SiO{sub 2} as the DI, a thinner DI leads to a stronger LSP coupling effect, when compared with the case of a thicker DI. By using GaZnO, which is a dielectric in the optical range and a good conductor under direct-current operation, as the DI, the LSP coupling results in the highest IQE, highest LED output intensity, and weakest droop effect.

  9. Thermally activated delayed fluorescence from {sup 3}n?* to {sup 1}n?* up-conversion and its application to organic light-emitting diodes

    SciTech Connect (OSTI)

    Li, Jie; Zhang, Qisheng; Nomura, Hiroko [Department of Chemistry and Biochemistry, and Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Miyazaki, Hiroshi [Department of Chemistry and Biochemistry, and Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Functional Materials Laboratory, Nippon Steel and Sumikin Chemical Co., Ltd, 46–80 Nakabaru, Sakinohama, Tobata, Kitakyushu, Fukuoka 804–8503 (Japan); Adachi, Chihaya, E-mail: adachi@cstf.kyushu-u.ac.jp [Department of Chemistry and Biochemistry, and Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); International Institute for Carbon Neutral Energy Research (WPI-I2CNER), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan)

    2014-07-07T23:59:59.000Z

    Intense n?* fluorescence from a nitrogen-rich heterocyclic compound, 2,5,8-tris(4-fluoro-3-methylphenyl)-1,3,4,6,7,9,9b-heptaazaphenalene (HAP-3MF), is demonstrated. The overlap-forbidden nature of the n?* transition and the higher energy of the {sup 3}??* state than the {sup 3}n?* one lead to a small energy difference between the lowest singlet (S{sub 1}) and triplet (T{sub 1}) excited states of HAP-3MF. Green-emitting HAP-3MF has a moderate photoluminescence quantum yield of 0.26 in both toluene and doped film. However, an organic light-emitting diode containing HAP-3MF achieved a high external quantum efficiency of 6.0%, indicating that HAP-3MF harvests singlet excitons through a thermally activated T{sub 1} ? S{sub 1} pathway in the electroluminescent process.

  10. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23T23:59:59.000Z

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  11. Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density

    SciTech Connect (OSTI)

    Rozhansky, I. V., E-mail: igor@quantum.ioffe.ru; Zakheim, D. A. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

    2006-07-15T23:59:59.000Z

    The study is devoted to theoretical explanation of a decrease in the electroluminescence efficiency as the pump current increases, which is characteristic of light-emitting-diode (LED) heterostructures based on AlInGaN. Numerical simulation shows that the increase in the external quantum efficiency at low current densities J {approx} 1 A/cm{sup 2} is caused by the competition between radiative and nonradiative recombination. The decrease in the quantum efficiency at current densities J > 1 A/cm{sup 2} is caused by a decrease in the efficiency of hole injection into the active region. It is shown that the depth of the acceptor energy level in the AlGaN emitter, as well as low electron and hole mobilities in the p-type region, plays an important role in this effect. A modified LED heterostructure is suggested in which the efficiency decrease with the pump current should not occur.

  12. Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

    SciTech Connect (OSTI)

    Hosalli, A. M.; Van Den Broeck, D. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)

    2013-12-02T23:59:59.000Z

    We demonstrate a metalorganic chemical vapor deposition growth approach for inverting N-polar to Ga-polar GaN by using a thin inversion layer grown with high Mg flux. The introduction of this inversion layer allowed us to grow p-GaN films on N-polar GaN thin film. We have studied the dependence of hole concentration, surface morphology, and degree of polarity inversion for the inverted Ga-polar surface on the thickness of the inversion layer. We then use this approach to grow a light emitting diode structure which has the MQW active region grown on the advantageous N-polar surface and the p-layer grown on the inverted Ga-polar surface.

  13. Experimental verification of effects of barrier dopings on the internal electric fields and the band structure in InGaN/GaN light emitting diodes

    SciTech Connect (OSTI)

    Song, Jung-Hoon; Kim, Tae-Soo; Park, Ki-Nam; Lee, Jin-Gyu [Department of Physics, Kongju National University, Kongju, Chungnam 314-701 (Korea, Republic of); Hong, Soon-Ku, E-mail: soonku@cnu.ac.kr [Department of Advanced Materials Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Cho, Sung-Royng; Lee, Seogwoo; Whan Cho, Meoung [Wasvesquare Co., Inc., Yongin, Gyeonggi 449-863 (Korea, Republic of)

    2014-03-24T23:59:59.000Z

    We experimentally clarify the effects of barrier dopings on the polarization induced electric fields and the band structure in InGaN/GaN blue light emitting diodes. Both effects were independently verified by using electric field modulated reflectance and capacitance-voltage measurement. It is shown that the Si barrier doping does reduce the polarization induced electric field in the quantum wells. But the benefit of Si-doping is nullified by modification of the band structure and depletion process. With increased number of doped barriers, smaller number of quantum wells remains in the depletion region at the onset of the diffusion process, which can reduce the effective active volume and enhance the electron overflow.

  14. Using an ultra-thin non-doped orange emission layer to realize high efficiency white organic light-emitting diodes with low efficiency roll-off

    SciTech Connect (OSTI)

    Zhu, Liping; Chen, Jiangshan; Ma, Dongge, E-mail: mdg1014@ciac.ac.cn [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate University of the Chinese Academy of Sciences, Changchun 130022 (China); Zhao, Yongbiao [Luminous Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Zhang, Hongmei [Department of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China)

    2014-06-28T23:59:59.000Z

    By adopting an ultra-thin non-doped orange emission layer sandwiched between two blue emission layers, high efficiency white organic light-emitting diodes (WOLEDs) with reduced efficiency roll-off were fabricated. The optimized devices show a balanced white emission with Internationale de L'Eclairage of (0.41, 0.44) at the luminance of 1000?cd/m{sup 2}, and the maximum power efficiency, current efficiency (CE), and external quantum efficiency reach 63.2?lm/W, 59.3?cd/A, and 23.1%, which slightly shift to 53.4?lm/W, 57.1?cd/A, and 22.2% at 1000?cd/m{sup 2}, respectively, showing low efficiency roll-off. Detailed investigations on the recombination zone and the transient electroluminescence (EL) clearly reveal the EL processes of the ultra-thin non-doped orange emission layer in WOLEDs.

  15. Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates

    SciTech Connect (OSTI)

    Trindade, A. J., E-mail: antonio.trindade@strath.ac.uk; Guilhabert, B.; Massoubre, D.; Laurand, N.; Gu, E.; Watson, I. M.; Dawson, M. D. [Institute of Photonics, SUPA, University of Strathclyde, 106 Rottenrow, Glasgow G4 0NW (United Kingdom)] [Institute of Photonics, SUPA, University of Strathclyde, 106 Rottenrow, Glasgow G4 0NW (United Kingdom); Zhu, D.; Humphreys, C. J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)] [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2013-12-16T23:59:59.000Z

    The transfer printing of 2 ?m-thick aluminum indium gallium nitride (AlInGaN) micron-size light-emitting diodes with 150?nm (±14?nm) minimum spacing is reported. The thin AlInGaN structures were assembled onto mechanically flexible polyethyleneterephthalate/polydimethylsiloxane substrates in a representative 16 × 16 array format using a modified dip-pen nano-patterning system. Devices in the array were positioned using a pre-calculated set of coordinates to demonstrate an automated transfer printing process. Individual printed array elements showed blue emission centered at 486?nm with a forward-directed optical output power up to 80??W (355 mW/cm{sup 2}) when operated at a current density of 20?A/cm{sup 2}.

  16. Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Prudaev, I. A., E-mail: jaia@pochta.ru; Golygin, I. Yu.; Shirapov, S. B.; Romanov, I. S.; Khludkov, S. S.; Tolbanov, O. P. [Tomsk State University (Russian Federation)] [Tomsk State University (Russian Federation)

    2013-10-15T23:59:59.000Z

    The experimental current-voltage characteristics and dependences of the external quantum yield on the current density of light-emitting diodes based on InGaN/GaN multiple quantum wells for the wide temperature range T = 10-400 K are presented. It is shown that, at low-temperatures T < 100 K, the injection of holes into the quantum wells occurs from localized acceptor states. The low-temperature injection of electrons into p-GaN occurs due to quasi-ballistic transport in the region of multiple quantum wells. An increase in temperature leads to an increase in the current which is governed by thermally activated hole and electron injection from the allowed bands of GaN.

  17. On the importance of AlGaN electron blocking layer design for GaN-based light-emitting diodes

    SciTech Connect (OSTI)

    Sheng Xia, Chang, E-mail: xiachsh@crosslight.com.cn; Simon Li, Z. M.; Sheng, Yang [Crosslight Software Inc., China Branch, Suite 906, Building JieDi, 2790 Zhongshan Bei Road, Shanghai 200063 (China)] [Crosslight Software Inc., China Branch, Suite 906, Building JieDi, 2790 Zhongshan Bei Road, Shanghai 200063 (China)

    2013-12-02T23:59:59.000Z

    There has been confusion regarding the usefulness of AlGaN electron blocking layer (EBL) in GaN-based light-emitting diodes (LEDs) with some published experimental data indicating that the LEDs without EBL performed better than those with it. InGaN/GaN LEDs have been investigated numerically to analyze its actual effect in these devices. Simulation results show that hole blocking effect of EBL mainly determines the effectiveness of using it which is more sensitive to its Al composition, band offset ratio, and polarization charges. It is found that the choice of Al composition is critical for EBL to improve the optical performance of GaN-based LEDs.

  18. REFINING THE SONIC FLASHLIGHT FOR INTERVENTIONAL PROCEDURES

    E-Print Network [OSTI]

    Stetten, George

    /or color display. For the latest handheld SF, a 54.8mm (diagonal) organic light emitting diode (OLED

  19. THE LUMINA PROJECT http://light.lbl.gov

    E-Print Network [OSTI]

    Jacobson, Arne

    components for the LED lights. #12;2 Introduction Solid-state lighting based on light emitting diode (LED

  20. artificial blue-light photoreceptors: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of dental composites cured with blue light emitting diodes with either a light emitting diode (LED) based light curing unit (LCU) or a conventional halogen LCU do reserved....

  1. OLED Stakeholder Meeting Report | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742Energy ChinaofSchaeferAprilOverview |November(National RenewableAnnual Report O H A fficeThisOLED

  2. DOE Announces Selections from Solid-State Lighting Core Technologies...

    Broader source: Energy.gov (indexed) [DOE]

    more than 10,000 hours. Recipient: Eastman Kodak Company Title: Quantum-Dot Light Emitting Diode Summary: The applicant is creating low cost inorganic light emitting diodes,...

  3. Nanoscale engineering boosts performance of quantum dot light...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Quantum dot light emitting diodes Nanoscale engineering boosts performance of quantum dot light emitting diodes Quantum dots are nano-sized semiconductor particles whose emission...

  4. Exciting White Lighting

    Broader source: Energy.gov [DOE]

    Windows that emit light and are more energy efficient? Universal Display’s PHOLED technology enables windows that have transparent light-emitting diodes in them.

  5. Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers

    SciTech Connect (OSTI)

    Yang, Yujue; Wang, Junxi; Li, Jinmin; Zeng, Yiping, E-mail: ypzeng@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-06-21T23:59:59.000Z

    The effects of InGaN-based light-emitting diodes (LEDs) with Al composition increasing and decreasing GaN-AlGaN barriers along the growth direction are studied numerically. Simulation results suggest that the LEDs with GaN-AlGaN composition-decreased barriers show more significant enhancement of light-output power and internal quantum efficiency than LEDs with composition-increasing GaN-AlGaN barriers when compared with the conventional LED with GaN barriers, due to the improvement in hole injection efficiency and electron blocking capability. Moreover, the optical performance is further improved by replacing GaN-AlGaN barriers with AlGaN-GaN barriers of the same Al composition-decreasing range, which are mainly attributed to the modified band diagrams. In addition, the major causes of the different efficiency droop behaviors for all the designed structures are explained by the electron leakage current and the different increase rates of hole concentration with injection current.

  6. Demonstration Assessment of Light-Emitting Diode (LED) Parking Lot Lighting at T.J.Maxx in Manchester, NH Phase I

    SciTech Connect (OSTI)

    Myer, Michael; Goettel, Russell T.

    2010-06-29T23:59:59.000Z

    A report describing the process and results of replacing existing parking lot lighting, looking at a LED option with occupancy sensors, and conventional alternates. Criteria include payback, light levels, occupant satisfaction. This report is Phase I of II. Phase I deals with initial installation.

  7. Metameric Modulation for Diffuse Visible Light Communications with Constant Ambient Lighting

    E-Print Network [OSTI]

    Little, Thomas

    untapped for wireless communications. Advancements in light emitting diode (LED) technology are making

  8. DuPont Displays Develops Low-Cost Method of Printing OLED Panels

    Broader source: Energy.gov [DOE]

    DuPont Displays Inc. (DDI) has developed a novel way of printing color-tunable OLED lighting panels that keeps manufacturing costs low. The method involves processing the organic layers from solution, with most of the process steps taking place under atmospheric conditions rather than in a high vacuum. Industry-standard slot-coating methods are used in conjunction with nozzle printing—in which the solutions of organic materials are continuously jetted through an array of nozzles moving at high speed—allowing the light-emitting materials to be spatially patterned.

  9. Solution-Processable Transparent Conductive Hole Injection Electrode for OLED SSL

    SciTech Connect (OSTI)

    None

    2012-07-15T23:59:59.000Z

    An interconnected network of silver nanowires has been used as transparent anode in OLED devices. This layer was deposited by spin-coating and slot-die coating from an aqueous nanowire suspension. The sheet resistance of the film was 10ohms/sq with a transmission (including the glass substrate) of higher than 85%. The first phase of the project focused on the implementation of this nanowire layer with a hole-injection-layer (HIL) which has been developed at Plextronics and has been shown to provide good stability and efficiency in conventional OLED devices. We modified the HIL solution such that it coated reasonably well with suitable surface morphology so that actual devices can be manufactured. During the second phase we investigated the hole-injection and stability of hole-onlydevices. We determined that the use of the nanowire network as anode does not introduce an additional degradation mechanism since the observed device characteristics did not differ from those made with ITO anode. We then proceeded to make actual OLED devices with this nanowire / HIL stack and achieved device characteristics similar state-of-the-art OLED devices with a single junction. In order to gain traction with potential OLED manufacturers, we decided to contract Novaled to prepare large-area demonstrators for us. For these devices, we used an allevaporated stack, i.e. we did use Novaledâ??s HIL material instead of Plextronicsâ??. We successfully fabricated demonstrators with an area of 25cm2 with a double or triple junction stack. Minor stack optimizations were necessary to achieve efficacies and lifetime equivalent with ITO devices made with the same devices stack. Due to the reduced microcavity effect, the color of the emitted light is significantly more stable with respect to the viewing angle compared to ITO devices. This fact in conjunction with the promise of lower production cost due to the elimination of the ITO sputtering process and the direct patterning of the anode layer are the obvious advantages of this technology. The project has shown that this nanowire technology is a viable option to achieve OLED devices with good lifetime and efficiency and we are currently working with manufacturers to utilize this technology in a production setting.

  10. Demonstration Assessment of Light-Emitting Diode (LED) Retrofit Lamps at Intercontinental Hotel in San Francisco, CA

    SciTech Connect (OSTI)

    Miller, Naomi J.; Curry, Ku'Uipo J.

    2010-11-01T23:59:59.000Z

    This document is a report of observations and results obtained from a lighting demonstration project conducted under the U.S. Department of Energy (DOE) GATEWAY Demonstration Program. The program supports demonstrations of high-performance solid-state lighting (SSL) products in order to develop empirical data and experience with in-the-field applications of this advanced lighting technology. The DOE GATEWAY Demonstration Program focuses on providing a source of independent, third-party data for use in decision-making by lighting users and professionals; this data should be considered in combination with other information relevant to the particular site and application under examination. Each GATEWAY Demonstration compares SSL products against the incumbent technologies used in that location. Depending on available information and circumstances, the SSL product may also be compared to alternate lighting technologies. Though products demonstrated in the GATEWAY program have been prescreened and tested to verify their actual performance, DOE does not endorse any commercial product or in any way guarantee that users will achieve the same results through use of these products.

  11. DESIGN PROJECTS 2012-2013 1. Quantum Dot Light Emitting Diodes (Dr. K. Deshpande, Dow Chemical Company/Prof. M.

    E-Print Network [OSTI]

    Weaver, John H.

    by the radioactive decay of plutonium 238 to drive thermoelectric generators (radioisotope thermoelectric generators electricity generation from light hydrocarbon feedstocks. In this project, the team will design carries no solar panels on board. Instead these vehicles use the heat (energy) generated

  12. Co-sputtered Aluminum Doped Zinc Oxide Thin Film as Transparent Anode for Organic Light-emitting Diodes

    E-Print Network [OSTI]

    Co-sputtered Aluminum Doped Zinc Oxide Thin Film as Transparent Anode for Organic Light and Technology, Clear Water Bay, Kowloon, Hong Kong, China ABSTRACT Aluminum doped zinc oxide (AZO that MTDATA matches better with AZO than CuPc, which served as hole injection layer. Keywords: Aluminum doped

  13. Luminescent properties of Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} and its potential application in white light emitting diodes

    SciTech Connect (OSTI)

    Wang, Zhijun, E-mail: wangzhijunmail@yahoo.com.cn [College of Physics Science and Technology, Hebei University, Baoding 071002 (China); Li, Panlai; Li, Ting; Zhang, Xing; Li, Qingxuan; Yang, Zhiping; Guo, Qinglin [College of Physics Science and Technology, Hebei University, Baoding 071002 (China)

    2013-06-01T23:59:59.000Z

    Graphical abstract: Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} phosphor can be effectively excited by an ultraviolet and near-ultraviolet light, and produce a bright blue emission centered at 436 nm. The CIE chromaticity coordinations (x, y) of Na{sub 2}CaSiO{sub 4}:Eu{sup 2+}(NSCE)/Li{sub 2}SrSiO{sub 4}:Eu{sup 2+}(LSSE) vary with the molar ratio of the two constituents. When NSCE/LSSE is 1:3, the CIE chromaticity coordination is (0.332, 0.346), which is close to that of the natural sunlight (0.33, 0.33). The results indicate that Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} may be a promising blue phosphor for UV chip-based multi-phosphor converted white light emitting diodes. Highlights: ? Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} shows the blue emission with a peak at 436 nm and broad excitation band in the UV/n-UV range. ? White light with CIE coordinates (0.332, 0.346) is generated by mixing the blue phosphor with the Li{sub 2}SrSiO{sub 4}:Eu{sup 2+} yellow phosphor. ? Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} would be a promising blue phosphor candidate for UV chip-based multi-phosphor converted white LEDs. - Abstract: A novel blue phosphor Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} is synthesized by a high temperature solid-state reaction, and its luminescent properties are systematically studied. Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} can be effectively excited by the 354 nm radiation, and create blue emission (436 nm). The emission intensity of Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} is influenced by the Eu{sup 2+} doping content, and the optimal doping content is 1.5%, and the concentration quenching mechanism of Eu{sup 2+} in Na{sub 2}CaSiO{sub 4} can be attributed to the multipolar interaction. The white light with CIE coordinates (0.332, 0.346) is generated by mixing the blue phosphor Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} with the yellow phosphor Li{sub 2}SrSiO{sub 4}:Eu{sup 2+}. The results indicate that Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} may be a potential blue emitting phosphor for UV chip-based multi-phosphor converted white light emitting diodes.

  14. LED Retrofit Project in TSH Basement On July 14 2014, McMaster Facilities Services completed an energy conservation lighting

    E-Print Network [OSTI]

    Haykin, Simon

    replaced with the new LED (light emitting diode) tubes. LEDs have better lighting quality, lower energy

  15. The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

    SciTech Connect (OSTI)

    Massabuau, F. C.-P., E-mail: fm350@cam.ac.uk; Oehler, F.; Pamenter, S. K.; Thrush, E. J.; Kappers, M. J.; Humphreys, C. J.; Oliver, R. A. [Department of Materials Science and Metallurgy, University of Cambridge, 22 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Davies, M. J.; Dawson, P. [Photon Science Institute, School of Physics and Astronomy, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kovács, A.; Dunin-Borkowski, R. E. [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, Leo-Brandt- Straße, D-52425 Jülich (Germany); Williams, T.; Etheridge, J. [Monash Centre for Electron Microscopy, Monash University, Clayton Campus, VIC 3800 (Australia); Hopkins, M. A.; Allsopp, D. W. E. [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom)

    2014-09-15T23:59:59.000Z

    The impact of trench defects in blue InGaN/GaN light emitting diodes (LEDs) has been investigated. Two mechanisms responsible for the structural degradation of the multiple quantum well (MQW) active region were identified. It was found that during the growth of the p-type GaN capping layer, loss of part of the active region enclosed within a trench defect occurred, affecting the top-most QWs in the MQW stack. Indium platelets and voids were also found to form preferentially at the bottom of the MQW stack. The presence of high densities of trench defects in the LEDs was found to relate to a significant reduction in photoluminescence and electroluminescence emission efficiency, for a range of excitation power densities and drive currents. This reduction in emission efficiency was attributed to an increase in the density of non-radiative recombination centres within the MQW stack, believed to be associated with the stacking mismatch boundaries which form part of the sub-surface structure of the trench defects. Investigation of the surface of green-emitting QW structures found a two decade increase in the density of trench defects, compared to its blue-emitting counterpart, suggesting that the efficiency of green-emitting LEDs may be strongly affected by the presence of these defects. Our results are therefore consistent with a model that the “green gap” problem might relate to localized strain relaxation occurring through defects.

  16. Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes

    SciTech Connect (OSTI)

    Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Wu, Kui; Sun, Bo; Zhang, Yonghui; Chen, Yu; Huo, Ziqiang; Hu, Qiang; Wang, Junxi; Zeng, Yiping; Li, Jinmin [State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 (China); Lan, Ding [National Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100080 (China)

    2014-06-15T23:59:59.000Z

    Large-scale Ag nanodisks (NDs) arrays fabricated using nanospherical-lens lithography (NLL) are embedded in p-GaN layer of an InGaN/GaN light-emitting diode (LED) for generating localized surface plasmon (LSP) coupling with the radiating dipoles in the quantum-well (QWs). Based on the Ag NDs with the controlled surface coverage, LSP leads to the improved crystalline quality of regrowth p-GaN, increased photoluminescence (PL) intensity, reduced PL decay time, and enhanced output power of LED. Compared with the LED without Ag NDs, the optical output power at a current of 350 mA of the LSP-enhanced LEDs with Ag NDs having a distance of 20 and 35 nm to QWs is increased by 26.7% and 31.1%, respectively. The electrical characteristics and optical properties of LEDs with embedded Ag NPs are dependent on the distance of between Ag NPs and QWs region. The LED with Ag NDs array structure is also found to exhibit reduced emission divergence, compared to that without Ag NDs.

  17. Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount

    SciTech Connect (OSTI)

    Markov, L. K., E-mail: l.markov@mail.ioffe.ru; Smirnova, I. P.; Pavlyuchenko, A. S. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Kukushkin, M. V.; Vasil'eva, E. D. [ZAO Innovation 'Tetis' (Russian Federation); Chernyakov, A. E. [Russian Academy of Sciences, Science-and-Technology Microelectronics Center (Russian Federation); Usikov, A. S. [De Core Nanosemiconductors Ltd. (India)

    2013-03-15T23:59:59.000Z

    Vertical and flip-chip light-emitting diode (LED) chips are compared from the viewpoint of the behavior of current spreading in the active region and the distribution of local temperatures and thermal resistances of chips. AlGaInN LED chips of vertical design are fabricated using Si as a submount and LED flipchips were fabricated with the removal of a sapphire substrate. The latter are also mounted on a Si submount. The active regions of both chips are identical and are about 1 mm{sup 2} in size. It is shown that both the emittance of the crystal surface in the visible range and the distribution of local temperatures estimated from radiation in the infrared region are more uniform in crystals of vertical design. Heat removal from flip-chips is insufficient in regions of the n contact, which do not possess good thermal contact with the submount. As a result, the total thermal resistances between the p-n junction and the submount both for the vertical chips and for flip-chips are approximately 1 K/W. The total area of the flip-chips exceeds that of the vertical design chips by a factor of 1.4.

  18. Distinguishing triplet energy transfer and trap-assisted recombination in multi-color organic light-emitting diode with an ultrathin phosphorescent emissive layer

    SciTech Connect (OSTI)

    Xue, Qin, E-mail: xueqin19851202@163.com; Liu, Shouyin [Department of Physical Science and Technology, Central China Normal University, Wuhan 430079 (China); Xie, Guohua; Chen, Ping; Zhao, Yi; Liu, Shiyong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China)

    2014-03-21T23:59:59.000Z

    An ultrathin layer of deep-red phosphorescent emitter tris(1-phenylisoquinoline) iridium (III) (Ir(piq){sub 3}) is inserted within different positions of the electron blocking layer fac-tris (1-phenylpyrazolato-N,C{sup 2?})-iridium(III) (Ir(ppz){sub 3}) to distinguish the contribution of the emission from the triplet exciton energy transfer/diffusion from the adjacent blue phosphorescent emitter and the trap-assisted recombination from the narrow band-gap emitter itself. The charge trapping effect of the narrow band-gap deep-red emitter which forms a quantum-well-like structure also plays a role in shaping the electroluminescent characteristics of multi-color organic light-emitting diodes. By accurately controlling the position of the ultrathin sensing layer, it is considerably easy to balance the white emission which is quite challenging for full-color devices with multiple emission zones. There is nearly no energy transfer detectable if 7 nm thick Ir(ppz){sub 3} is inserted between the blue phosphorescent emitter and the ultrathin red emitter.

  19. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Liu, Wei; Ju, Zhengang; Tan, Swee Tiam; Ji, Yun; Kyaw, Zabu; Zhang, Xueliang; Wang, Liancheng; Sun, Xiao Wei, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Demir, Hilmi Volkan, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey)

    2014-07-21T23:59:59.000Z

    In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate the quantum confined Stark effect (QCSE), caused due to strong polarization induced electric field, through spatially confining electrons and holes in small recombination volumes. However, this inevitably increases the carrier density in quantum wells, which in turn aggravates the Auger recombination, since the Auger recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells with the InN composition linearly grading along the growth orientation in LED structures suppressing the Auger recombination and the QCSE simultaneously. Theoretically, the physical mechanisms behind the Auger recombination suppression are also revealed. The proposed LED structure has experimentally demonstrated significant improvement in optical output power and efficiency droop, proving to be an effective solution to this important problem of Auger recombination.

  20. Growth and properties of AlGaInP resonant cavity light emitting diodes on Ge/SiGe/Si substrates

    SciTech Connect (OSTI)

    Kwon, O.; Boeckl, J.; Lee, M.L.; Pitera, A.J.; Fitzgerald, E.A.; Ringel, S.A. [Department of Electrical Engineering, Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Department of Electrical and Computer Engineering, Ohio State University, 2015 Neil Avenue, Columbus, Ohio 43210 (United States)

    2005-02-01T23:59:59.000Z

    Visible AlGaInP resonant cavity light emitting diodes (RCLEDs) were grown by molecular beam epitaxy and fabricated on low-dislocation density, SiGe/Si metamorphic substrates. A comparison with identical devices grown on GaAs and Ge substrates shows that not only did the RCLED device structure successfully transfer to the SiGe/Si substrate, but also a higher optical output power was obtained. This result is attributed to enhanced lateral current spreading by the low residual dislocation density ({approx}1x10{sup 6} cm{sup -2}) network within the virtual Ge substrate and the superior thermal conductivity of the underlying Si wafer. In addition, the growth of an AlGaAs current spreading layer and a modified top metal contact were incorporated in the RCLED on SiGe to optimize device performance. The measured electroluminescent output power was 166 {mu}W at a 665 nm peak wavelength under 500 mA current injection. Extremely narrow electroluminescence linewidths were achieved with a full width half maximum value of 3.63 nm under 50 mA current injection. These results demonstrate great promise for the monolithic integration of visible band optical sources with Si-based electronic circuitry.

  1. Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes

    SciTech Connect (OSTI)

    Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Zhang, Shuming; Li, Deyao; Zhang, Liqun; Yang, Hui [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Cai, Jin; Wang, Hui; Wang, H. B. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Suzhou Nanojoin Photonics Co., Ltd., Suzhou (China)

    2014-10-27T23:59:59.000Z

    The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3?nm–6?nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200?A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelength we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.

  2. Luminescence properties of light-emitting diodes based on GaAs with the up-conversion Y{sub 2}O{sub 2}S:Er,Yb luminophor

    SciTech Connect (OSTI)

    Gruzintsev, A. N. [Russian Academy of Sciences, Institute of Problems of Microelectronics Technology (Russian Federation)], E-mail: gran@ipmt-hpm.ac.ru; Barthou, C.; Benalloul, P. [Institute des NanoSciences (France)

    2008-03-15T23:59:59.000Z

    Y{sub 2}O{sub 2}S luminophors doped with Er{sup 3+} and Yb{sup 3+} ions are produced by means of solid-phase synthesis and deposited onto standard AL123A infrared light-emitting diodes. When excited with 940 nm radiation from a light-emitting diode, the structures exhibit intense visible up-conversion luminescence. A maximal brightness of 2340 cd/m{sup 2} of green and red up-conversion luminescence at corresponding wavelengths around 550 and 600 nm is observed for the Y{sub 2}O{sub 2}S compound doped with 2 at % Er{sup 3+} ions and 6 at % Yb{sup 3+} ions. The ratio of the intensity of green (or red) up-conversion luminescence to the intensity of infrared Stokes luminescence increases with increasing applied voltage. The efficiency of visible emission of the light-emitting diode structures is {eta} = 1.2 lm/W at an applied voltage of 1.5 V.

  3. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas Zi-Hui Zhang, Swee Tiam Tan, Zabu Kyaw, Wei Liu, Yun Ji, Zhengang Ju, Xueliang Zhang, Xiao Wei Sun, and

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas Zi-Hui Zhang.179.66.197 On: Thu, 26 Dec 2013 08:34:00 #12;p-doping-free InGaN/GaN light-emitting diode driven by three (Received 12 June 2013; accepted 6 December 2013; published online 23 December 2013) Here, GaN/AlxGa1-x

  4. Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode

    E-Print Network [OSTI]

    Fan, Shanhui

    structure that emits 980 nm light. The structure Fig. 1 consists of an InGaP/InGaAs active region on top active region con- sists of 32 nm of InGaP beneath an 8 nm InGaAs quantum well QW ; the upper InGaP has is transferred into the upper InGaP layer by reactive-ion etching RIE in a CH4:H2 plasma using a SiO2 hard mask

  5. P-78 / H. J. Peng 516 SID 03 DIGEST

    E-Print Network [OSTI]

    Kwok, Hoi S.

    , Clear Water Bay, Kowloon, Hong Kong Abstract An organic light emitting diode with a microcavity calculations. 1. Introduction Organic light emitting diodes (OLEDs) are challenging liquid crystal displays organic light emitting diodes (b) the normal direction electroluminescent spectra of devices

  6. PPG Industries Develops a Low-Cost Integrated OLED Substrate

    Broader source: Energy.gov [DOE]

    With the help of DOE funding, PPG Industries, Inc., has developed a low-cost OLED substrate, using inexpensive soda-lime "float" glass that the company manufactures at high volume for the architectural industry. Float glass is thin sheet glass and is much less expensive than the borosilicate or double-side-polished display glass that's currently being used as substrates by OLED device manufacturers.

  7. Organic light-emitting device with a phosphor-sensitized fluorescent emission layer

    DOE Patents [OSTI]

    Forrest, Stephen (Ann Arbor, MI); Kanno, Hiroshi (Osaka, JP)

    2009-08-25T23:59:59.000Z

    The present invention relates to organic light emitting devices (OLEDs), and more specifically to OLEDS that emit light using a combination of fluorescent emitters and phosphorescent emitters. The emissive region of the devices of the present invention comprise at least one phosphor-sensitized layer which has a combined emission from a phosphorescent emitter and a fluorescent emitter. In preferred embodiments, the invention relates to white-emitting OLEDS (WOLEDs).

  8. Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire

    SciTech Connect (OSTI)

    Du, Chunhua; Ma, Ziguang; Zhou, Junming; Lu, Taiping; Jiang, Yang; Jia, Haiqiang; Liu, Wuming; Chen, Hong, E-mail: hchen@iphy.ac.cn [Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-04-14T23:59:59.000Z

    The asymmetric dual-wavelength (green/blue) coupled InGaN/GaN multiple quantum wells were proposed to modulate the green emission intensity. Electroluminescent measurements demonstrate the conspicuous increment of the green light intensity by decreasing the coupled barrier thickness. This was partly attributed to capture of more carriers when holes tunnel across the thinner barrier from the blue quantum wells, as a hole reservoir, to the green quantum wells. While lower effective barrier height of the blue quantum wells benefits improved hole transportation from p-GaN to the active region. Efficiency droop of the green quantum wells was partially alleviated due to the enhanced injection efficiency of holes.

  9. Many exterior entry and walkway lights in residential and commercial

    E-Print Network [OSTI]

    be difficult since retail stocking is inconsistent. The Light-Emitting Diode (LED) Hybrid Outdoor Fixture

  10. Task lights, commonly used in offices, homes, and dormitories, often use

    E-Print Network [OSTI]

    and posing difficulties in focusing the light. Light-emitting diode (LED) lighting, a fairly new solid

  11. The Problem Conventional office lighting typically consists of bright fluo-

    E-Print Network [OSTI]

    by delamping--result in lower power consump- tion. The PLS, which features light-emitting diode (LED lighting is reduced and three light-emitting diode (LED) task lights (two desk lamps and one undercabinet

  12. New OLED Lighting Systems Shine Bright, Save Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn'tOrigin of Contamination in Many DevilsForumEngines | Department ofUniversal Display Corporation

  13. Four SBIR Grants Awarded for SSL Technology (FY13 Release 2 Phase...

    Broader source: Energy.gov (indexed) [DOE]

    architectural lighting fixtures that utilize the unique capabilities of organic light-emitting diode (OLED) technology to provide energy-efficient lighting for nighttime hours in...

  14. Development of a cost effective surface-patterned transparent conductive coating as top-contact of light emitting diodes

    SciTech Connect (OSTI)

    Haldar, Arpita [Department of Applied Optics and Photonics, University of Calcutta, Kolkata-700009 (India); Sol-Gel Division, CSIR-Central Glass and Ceramic Research Institute, Kolkata 700032 (India); Bera, Susanta; Jana, Sunirmal, E-mail: sjana@cgcri.res.in, E-mail: srirajib@yahoo.com [Sol-Gel Division, CSIR-Central Glass and Ceramic Research Institute, Kolkata 700032 (India); Bhattacharya, Kallol; Chakraborty, Rajib, E-mail: sjana@cgcri.res.in, E-mail: srirajib@yahoo.com [Department of Applied Optics and Photonics, University of Calcutta, Kolkata-700009 (India)

    2014-05-21T23:59:59.000Z

    Sol-gel process has been used to form indium zinc oxide films using an optimized combination of zinc to indium concentration in the precursor solutions. Different structures, like one (1D) and two-dimensional (2D) gratings and diffractive optical elements (DOEs) in the form of Fresnel lens are fabricated on the film surface of proposed top metal contact of LED by imprint soft lithography technique. These structures can enhance the LED's light extraction efficiency (LEE) or can shape the output beam pattern, respectively. Several characterizations are done to analyze the material and structural properties of the films. The presence of 1D and 2D gratings as well as DOEs is confirmed from field emission scanning electron and atomic force microscopes analyses. Although, X-ray diffraction shows amorphous nature of the film, but transmission electron microscopy study shows that it is nano crystalline in nature having fine particles (?8?nm) of hexagonal ZnO. Shrinkage behaviour of gratings as a function of curing temperature is explained by Fourier transform infra-red spectra and thermo gravimetric-differential thermal analysis. The visible transmission and sheet resistance of the sample are found comparable to tin doped indium oxide (ITO). Therefore, the film can compete as low cost substitute of ITO as top metal contact of LEDs.

  15. The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

    SciTech Connect (OSTI)

    Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Wang, Junxi; Chen, Yu; Hu, Qiang; Lu, Hongxi; Li, Jinmin [State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 (China)] [State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 (China); Lan, Ding [National Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100080 (China)] [National Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100080 (China)

    2014-02-15T23:59:59.000Z

    Self-assembly SiO{sub 2} nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, the external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period.

  16. Sandia Energy - (Lighting and) Solid-State Lighting: Science...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on the third and upcoming revolution (illumination). Topics cover the basics of light-emitting diode (LED) operation; a 200-year history of lighting technology; the importance of...

  17. Sandia National Laboratories: (Lighting and) Solid-State Lighting...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on the third and upcoming revolution (illumination). Topics cover the basics of light-emitting diode (LED) operation; a 200-year history of lighting technology; the importance of...

  18. Sandia National Laboratories: efficient LED lighting

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Partnership, Research & Capabilities, Solid-State Lighting Solid state lighting (SSL), which uses light-emitting diodes (LEDs), has the potential to be 10 times more energy...

  19. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

    SciTech Connect (OSTI)

    Ledentsov, N. N., E-mail: nikolay.ledentsov@v-i-systems.com; Shchukin, V. A. [VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany); Lyytikäinen, J.; Okhotnikov, O. [Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland); Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V. [A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation); Schlichting, S.; Nippert, F.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)

    2014-11-03T23:59:59.000Z

    We report on green (550–560?nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (?500?A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (?550?nm at room temperature). At high current densities (>1?kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4?kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14?kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

  20. Designing Interactive Lighting Dzmitry Aliakseyeu, Bernt Meerbeek, Jon

    E-Print Network [OSTI]

    The Light Emitting Diode (LED) has caused a profound change within the lighting industry. This is due

  1. Space charge spectroscopy of integrated quantum well infrared photodetectorlight emitting diode

    E-Print Network [OSTI]

    Perera, A. G. Unil

    Space charge spectroscopy of integrated quantum well infrared photodetector±light emitting diode M ± light emitting diode (QWIP-LED). Quasistatic capacitance±voltage (C±V ) characteristics under reverse.V. All rights reserved. Keywords: Quantum-well infrared photodetector; Light-emitting diode; Space charge

  2. LED Provides Effective and Efficient Parking Area Lighting at...

    Broader source: Energy.gov (indexed) [DOE]

    White Light Options for Parking Area Lighting Demonstration Assessment of Light Emitting Diode (LED) Street Lighting, Final Report Guide to FEMP-Designated Parking Lot...

  3. A LIGHT LINK COUPLED CURRENT MONITOR L. ROHRER and H. SCHNITTER

    E-Print Network [OSTI]

    Boyer, Edmond

    to frequency converter and a light emitting diode. The emitted light pulses are transmitted by a light pipe of a battery operated current to frequency converter which feeds a light emitting diode, an acrylic light guide

  4. Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes

    SciTech Connect (OSTI)

    Iida, Daisuke, E-mail: dft0tfi16@meijo-u.ac.jp; Kawai, Syunsuke; Ema, Nobuaki; Tsuchiya, Takayoshi; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi [Faculty of Science and Technology, Meijo University, Nagoya 468-8502 (Japan); Akasaki, Isamu [Faculty of Science and Technology, Meijo University, Nagoya 468-8502 (Japan); Akasaki Research Center, Nagoya University, Nagoya 464-8603 (Japan)

    2014-08-18T23:59:59.000Z

    We developed a laser lift-off technique for a freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN. A combination of an In droplet formed by thermal decomposition of GaInN during growth and a pulsed second-harmonic neodymium-doped yttrium aluminum garnet laser (??=?532?nm) realized the lift-off GaN substrate. After laser lift-off of the GaN substrate, it was used to achieve 380?nm ultraviolet light-emitting diodes with light output enhanced 1.7-fold. In this way, the light extraction can be improved by removing the GaN substrate.

  5. Narrow spectral emission CaMoO{sub 4}: Eu{sup 3+}, Dy{sup 3+}, Tb{sup 3+} phosphor crystals for white light emitting diodes

    SciTech Connect (OSTI)

    Khanna, A. [Smart Lighting Engineering Research Center, 110, 8th Street, Troy, New York, 12180 (United States) [Smart Lighting Engineering Research Center, 110, 8th Street, Troy, New York, 12180 (United States); Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, 110, 8th Street, Troy, New York, 12180 (United States); Dutta, P.S., E-mail: duttap@rpi.edu [Smart Lighting Engineering Research Center, 110, 8th Street, Troy, New York, 12180 (United States); Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, 110, 8th Street, Troy, New York, 12180 (United States)

    2013-02-15T23:59:59.000Z

    Alkaline earth metal molybdates are promising candidates as a host material for high efficiency narrow spectral emission phosphors. These phosphors could potentially be used for the fabrication of phosphor-converted light emitting diodes (pc-LEDs). Phosphor crystals of calcium molybdate doped with rare earth dopant Ln{sup 3+}(Ln=Eu, Dy, Tb) grown using flux growth method have been shown to exhibit higher excitation efficiency than the powders synthesized by solid-state reaction process. Molybdenum (VI) oxide has been found to be a suitable flux for growing large size optically transparent high quality crystals at a temperature around 1100 Degree-Sign C. Using the excitation wavelengths of 465 nm, 454 nm and 489 nm for CaMoO{sub 4}: Eu{sup 3+}, CaMoO{sub 4}: Dy{sup 3+} and CaMoO{sub 4}: Tb{sup 3+}, respectively, intense emission lines at wavelengths of 615 nm, 575 nm and 550 nm were observed. The optimized doping concentrations of 12%, 2% and 5% for Eu{sup 3+}, Dy{sup 3+} and Tb{sup 3+}, respectively, provided the highest luminescence intensity. - Graphical Abstract: CaMoO{sub 4}: Eu{sup 3+} phosphor crystals grown using a molybdenum (VI) oxide flux exhibited around 1.5 times the emission intensity of powders obtained from solid-state reaction at the same synthesis temperature. These crystals were found to efficiently emit 615 nm red light when excited by near UV light up to a wavelength of 395 nm. Highlights: Black-Right-Pointing-Pointer CaMoO{sub 4}: Ln{sup 3+} (Ln=Eu{sup 3+}, Dy{sup 3+}, Tb{sup 3+}) phosphor crystals were successfully grown using high temperature flux (solutions) containing molybdenum (VI) oxide or lithium chloride. Black-Right-Pointing-Pointer Narrow spectral emission at 615 nm, 575 nm and 550 nm, respectively, was observed from CaMoO{sub 4}: Ln{sup 3+} (Ln=Eu{sup 3+}, Dy{sup 3+}, Tb{sup 3+}) phosphor crystals. Black-Right-Pointing-Pointer The optimized doping concentrations of Eu{sup 3+}, Dy{sup 3+}, Tb{sup 3+} in CaMoO{sub 4} for highest emission intensity were determined to be 12%, 2% and 5%, respectively. Black-Right-Pointing-Pointer The CaMoO{sub 4}: Ln{sup 3+} (Ln=Eu{sup 3+}, Dy{sup 3+}, Tb{sup 3+}) phosphor crystals grown with molybdenum (VI) oxide flux exhibited 50% higher emission intensity compared to the crystals grown with lithium chloride flux and the powders synthesized by solid-state reaction.

  6. A hole accelerator for InGaN/GaN light-emitting diodes Zi-Hui Zhang, Wei Liu, Swee Tiam Tan, Yun Ji, Liancheng Wang, Binbin Zhu, Yiping Zhang, Shunpeng Lu,

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    A hole accelerator for InGaN/GaN light-emitting diodes Zi-Hui Zhang, Wei Liu, Swee Tiam Tan, Yun Ji://scitation.aip.org/content/aip/journal/apl/105/15?ver=pdfcov Published by the AIP Publishing Articles you may be interested in p-doping-free InGaN/GaN.1063/1.4858386 The effect of silicon doping in the barrier on the electroluminescence of InGaN/GaN multiple quantum well

  7. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, VOL. , NO. , 2012 1 Dynamic Driver Supply Voltage Scaling for Organic

    E-Print Network [OSTI]

    Pedram, Massoud

    Dynamic Driver Supply Voltage Scaling for Organic Light Emitting Diode Displays Donghwa Shin, Student, Fellow, IEEE Abstract--Organic light emitting diode (OLED) display is a self-illuminating device]. On the other hand, an organic light emitting diode (OLED) is self-illuminating using organic light emission

  8. Pousset, Obein, Razet, LED lighting quality with CQS samples CIE 2010 : Lighting Quality and Energy Efficiency, 14-17 March 2010, Vienna, Austria 1

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    A psychophysical experiment developed to evaluate light quality of Light Emitting Diodes (LEDs) is described. Keywords: Light Emitting Diode, quality of light, Color Rendering Index, Color Quality Scale, visual

  9. GaN0.011P0.989–GaP Double-Heterostructure Red Light-Emitting Diodes Directly Grown on GaP Substrates

    E-Print Network [OSTI]

    Tu, Charles W

    2000-01-01T23:59:59.000Z

    and C. W. Tu, GaN diodes on GaP substrates, 2000. [7] J. W.on a GaN directly grown on a GaP substrate was successfullyDH) directly a GaN grown on a (100) GaP substrate. Fig. 1(a)

  10. adsorbed organic films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    nanoporous films H. J. Peng, Y the light extraction efficiency for organic light emitting diode OLED . Nanoporous alumina film was used by Bragg scattering. The corrugated...

  11. Late Quaternary history of Washington Land, North Greenland OLE BENNIKE

    E-Print Network [OSTI]

    Ingólfsson, Ólafur

    Late Quaternary history of Washington Land, North Greenland OLE BENNIKE Bennike, O. 2002 (September): Late Quaternary history of Washington Land, North Greenland. Boreas, Vol. 31, 260­272. Oslo. ISSN 0300-9483. During the last glacial stage, Washington Land in western North Greenland was probably completely inun

  12. Voltage-induced electroluminescence characteristics of hybrid light-emitting diodes with CdSe/Cd/ZnS core-shell nanoparticles embedded in a conducting polymer on plastic substrates

    SciTech Connect (OSTI)

    Kwak, Kiyeol; Cho, Kyoungah, E-mail: chochem@korea.ac.kr, E-mail: sangsig@korea.ac.kr; Kim, Sangsig, E-mail: chochem@korea.ac.kr, E-mail: sangsig@korea.ac.kr [Department of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)] [Department of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

    2014-03-10T23:59:59.000Z

    We investigate the electroluminescence (EL) characteristics of a hybrid light-emitting diode (HyLED) with an emissive layer comprised of CdSe/Cd/ZnS core-shell nanoparticles (NPs) embedded in poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO) on a plastic substrate. The EL characteristics change dramatically with increasing of the biased voltage. At low voltages, recombination of electrons and holes occurs only in the PFO film because of poor charge transfer in the PFO-CdSe/Cd/ZnS NPs composite film, while the color of the light-emitting from the HyLED changes from blue to red as the biased voltage increases from 7.5 to 17.5?V. We examine and discuss the mechanism of this color tunability.

  13. Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes

    SciTech Connect (OSTI)

    Al tahtamouni, T. M., E-mail: talal@yu.edu.jo [Department of Physics, Yarmouk University, Irbid 21163 (Jordan); Lin, J. Y.; Jiang, H. X. [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)] [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

    2014-04-15T23:59:59.000Z

    Mg-doped AlN/AlGaN superlattice (Mg-SL) and Mg-doped AlGaN epilayers have been investigated in the 284 nm deep ultraviolet (DUV) light emitting diodes (LEDs) as electron blocking layers. It was found that the use of Mg-SL improved the material quality of the p-GaN contact layer, as evidenced in the decreased density of surface pits and improved surface morphology and crystalline quality. The performance of the DUV LEDs fabricated using Mg-SL was significantly improved, as manifested by enhanced light intensity and output power, and reduced turn-on voltage. The improved performance is attributed to the enhanced blocking of electron overflow, and enhanced hole injection.

  14. Sr{sub 3}Al{sub 2}O{sub 5}Cl{sub 2}:Ce{sup 3+},Eu{sup 2+}: A potential tunable yellow-to-white-emitting phosphor for ultraviolet light emitting diodes

    SciTech Connect (OSTI)

    Song Yanhua; Jia Guang; Yang Mei; Huang Yeju; You Hongpeng; Zhang Hongjie [State Key laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China) and Graduate University of the Chinese Academy of Sciences, Beijing 100049 (China)

    2009-03-02T23:59:59.000Z

    The Sr{sub 3}Al{sub 2}O{sub 5}Cl{sub 2}:Ce{sup 3+},Eu{sup 2+} phosphors were prepared by solid state reaction. The obtained phosphors exhibit a strong absorption in the UV-visible region and have two intense emission bands at 444 and 609 nm. The energy transfer from the Ce{sup 3+} to Eu{sup 2+} ions was observed, and the critical distance has been estimated to be about 24.5 A by spectral overlap method. Furthermore, the developed phosphors can generate lights from yellow-to-white region under the excitation of UV radiation by appropriately tuning the activator content, indicating that they have potential applications as an UV-convertible phosphor for white light emitting diodes.

  15. Typically, hotel bathroom lights are left on between five to eight hours per occupied

    E-Print Network [OSTI]

    -public spaces, the energy efficient, super bright light-emitting diode (LED) nightlight remains on whenever

  16. Efficient light harvesting in multiple-device stacked structure for polymer solar cells

    E-Print Network [OSTI]

    semitrans- parent cathodes for polymer light-emitting diodes PLEDs , primarily focusing on two common

  17. Collimated light from a waveguide for a display Adrian Travis,1,2*

    E-Print Network [OSTI]

    Rajamani, Sriram K.

    between this light-guide and a liquid crystal panel guides light from color light-emitting diodes by light emitting diodes but these are point #116996 - $15.00 USD Received 9 Sep 2009; revised 9 Oct 2009

  18. Ultrabright fluorescent OLEDS using triplet sinks

    DOE Patents [OSTI]

    Zhang, Yifan; Forrest, Stephen R; Thompson, Mark

    2013-06-04T23:59:59.000Z

    A first device is provided. The first device further comprises an organic light emitting device. The organic light emitting device further comprises an anode, a cathode, and an emissive layer disposed between the anode and the cathode. The emissive layer further comprises an organic host compound, an organic emitting compound capable of fluorescent emission at room temperature, and an organic dopant compound. The triplet energy of the dopant compound is lower than the triplet energy of the host compound. The dopant compound does not strongly absorb the fluorescent emission of the emitting compound.

  19. Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide

    E-Print Network [OSTI]

    Baugher, Britton W. H.

    The p–n junction is the functional element of many electronic and optoelectronic devices, including diodes, bipolar transistors, photodetectors, light-emitting diodes and solar cells. In conventional p–n junctions, the ...

  20. DOE Solid-State Lighting Program Overview Brochure

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Lighting Program Shaping the Future of Solid-State Lighting Today, LED (light emitting diode) technologies illuminate grocery display cases, make parking garages and...

  1. Energy Department Announces Indoor Lighting Winners of Next Generation...

    Broader source: Energy.gov (indexed) [DOE]

    was launched in 2008 to promote excellence in the design of energy-efficient light-emitting diode (LED) commercial lighting fixtures or "luminaires." Solid-state lighting...

  2. Enhancing the Field of View Limitation of Visible Light Communication-based Platoon

    E-Print Network [OSTI]

    Boyer, Edmond

    . In the mean time, Light Emitting Diode (LED) has become very common in automotive lighting due to its long

  3. Engineering for Environmental Sustainability http://engineering.tufts.edu/ Energy-efficient Visible Light Communication

    E-Print Network [OSTI]

    Tufts University

    Light Communication What is the problem? The white light-emitting diode (LED) stands at the threshold

  4. Impact of Lighting Requirements on VLC Systems J. Gancarz, H. Elgala, T.D.C. Little

    E-Print Network [OSTI]

    Little, Thomas

    Report No. 11-01-2013 Abstract Advances in Solid State Lighting (SSL) are enabling Light-Emitting Diodes

  5. Hyperfine-Field-Mediated Spin Beating in Electrostatically Bound Charge Carrier Pairs D. R. McCamey, K. J. van Schooten, W. J. Baker, S.-Y. Lee, S.-Y. Paik, J. M. Lupton,* and C. Boehme

    E-Print Network [OSTI]

    McCamey, Dane

    of the current through an organic light emitting diode under coherent spin-resonant excitation. At weak driving processes responsible for light emission in organic light-emitting diodes (OLEDs), such local variations

  6. Numerical Modelling of Light Emission and Propagation in (Organic) LEDs with the Green's Tensor

    E-Print Network [OSTI]

    Floreano, Dario

    light emitting diodes, light emission, light extraction, dipole radiation, stratified media, layered surpasses incandescent sources by a factor of 2 and with further improvements light emitting diodes could on light extraction techniques from inorganic light emitting diodes we recommend chapter 5 in 1 . Organic

  7. Sixth International Conference on Solid State Lighting, edited by Ian T. Ferguson, Nadarajah Narendran, Tsunemasa Taguchi, Ian E. Ashdown,

    E-Print Network [OSTI]

    Weiss, Sharon

    commercial white light emitting diodes (LEDs) rely on complicated fabrication methods to produce white light: Cadmium Selenide, Nanocrystal, Photoluminescence, Phosphor, White Light, Light Emitting Diode, LED 1. INTRODUCTION 1.1 Solid state lighting Solid state lighting, in the form of white light emitting diodes (LEDs

  8. GaInN light-emitting diodes using separate epitaxial growth for the p-type region to attain polarization-inverted electron-blocking layer, reduced electron leakage, and improved hole injection

    SciTech Connect (OSTI)

    Meyaard, David S., E-mail: meyaad@rpi.edu; Lin, Guan-Bo; Ma, Ming; Fred Schubert, E. [Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)] [Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Cho, Jaehee [Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Han, Sang-Heon; Kim, Min-Ho; Shim, HyunWook; Sun Kim, Young [LED Business, Samsung Electronics, Yongin 446-920 (Korea, Republic of)] [LED Business, Samsung Electronics, Yongin 446-920 (Korea, Republic of)

    2013-11-11T23:59:59.000Z

    A GaInN light-emitting diode (LED) structure is analyzed that employs a separate epitaxial growth for the p-type region, i.e., the AlGaN electron-blocking layer (EBL) and p-type GaN cladding layer, followed by wafer or chip bonding. Such LED structure has a polarization-inverted EBL and allows for uncompromised epitaxial-growth optimization of the p-type region, i.e., without the need to consider degradation of the quantum-well active region during p-type region growth. Simulations show that such an LED structure reduces electron leakage, reduces the efficiency droop, improves hole injection, and has the potential to extend high efficiencies into the green spectral region.

  9. The OCT-Penlight: In-Situ Image Display for Guiding Microsurgery Using Optical Coherence Tomography (OCT)

    E-Print Network [OSTI]

    Stetten, George

    emitting diode (OLED) display and a reflective liquid crystal display (LCD). The OLED has the advantage surgical access. The two prototypes constructed thus far have used, respectively, a miniature organic light

  10. anode-cathode microbial fuel: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    OLEDs have been fabricated using a new anode-cathode-layer (ACL) that connects light emitting diode (OLED) 1, much development has been made to improve this device for...

  11. anode catalyst layer: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    OLEDs have been fabricated using a new anode-cathode-layer (ACL) that connects light emitting diode (OLED) 1, much development has been made to improve this device for...

  12. anode buffer layer: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    OLEDs have been fabricated using a new anode-cathode-layer (ACL) that connects light emitting diode (OLED) 1, much development has been made to improve this device for...

  13. anode cathodic protection: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    OLEDs have been fabricated using a new anode-cathode-layer (ACL) that connects light emitting diode (OLED) 1, much development has been made to improve this device for...

  14. anode interfacial layer: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    OLEDs have been fabricated using a new anode-cathode-layer (ACL) that connects light emitting diode (OLED) 1, much development has been made to improve this device for...

  15. Electron transport in naphthylamine-based organic compounds S. C. Tse, K. C. Kwok, and S. K. Soa

    E-Print Network [OSTI]

    So, Shu K.

    are organic light-emitting diodes OLEDs , thin-film transistors, solar cells, and photodetectors.1­4 Among them, OLED is now a leading contender in ultrathin, flexible, flat panel display technology. A simple

  16. Illumination Sufficiency Survey Techniques: In-situ Measurements of Lighting System Performance and a User Preference Survey for Illuminance in an Off-Grid, African Setting

    E-Print Network [OSTI]

    Alstone, Peter

    2012-01-01T23:59:59.000Z

    L. Replacing Fuel Based Lighting with Light Emitting DiodesCountries: Energy and Lighting in Rural Nepali Homes. Leukosrn3-illum-threshold.pdf Lighting Africa, 2008. Lighting

  17. als advanced light: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Websites Summary: A bright cadmium-free, hybrid organicquantum dot white light-emitting diode Xuyong Yang, Yoga electroluminescence of n-ZnMgOp-GaN light-emitting diodes...

  18. GEA Refrigeration Technologies / GEA Refrigeration Germany GmbH Wolfgang Dietrich / Dr. Ole Fredrich

    E-Print Network [OSTI]

    Oak Ridge National Laboratory

    GEA Refrigeration Technologies / GEA Refrigeration Germany GmbH Wolfgang Dietrich / Dr. Ole Technologies3 Achema 2012 // heat pumps using ammonia Industrial demand on heat in Germany Heatdemandin

  19. Patterned three-color ZnCdSeZnCdMgSe quantum-well structures for integrated full-color and white light emitters

    E-Print Network [OSTI]

    . This result demonstrates the feasibility of fabricating integrated full-color light emitting diode and laser American Institute of Physics. S0003-6951 00 04149-8 Light emitting diodes LEDs and laser diodes LDs having

  20. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect (OSTI)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18T23:59:59.000Z

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  1. LED Light Fixture Project FC1 Director's Conference Room: Life Cycle Cost and Break-even Analysis

    E-Print Network [OSTI]

    Johnston, Daniel

    . A light-emitting diode (LED) is a solid-state lighting source that switches on instantly, is readily

  2. MATERIALS DEGRADATION ANALYSIS AND DEVELOPMENT TO ENABLE ULTRA LOW COST, WEB-PROCESSED WHITE P-OLED FOR SSL

    SciTech Connect (OSTI)

    DR. DEVIN MACKENZIE

    2011-12-13T23:59:59.000Z

    Progress over Phase II of DE-FG02-07ER86293 'Materials Degradation Analysis and Development to Enable Ultra Low Cost, Web-Processed White P-OLED for SSL' was initially rapid in terms of device performance improvements. We exceeded our device luminance lifetime goals for printed flexible white OLEDs as laid out in our project proposal. Our Phase II performance target was to demonstrate >1500 hours luminance lifetime at 100 Cd/m2 from a printed flexible device. We now have R&D devices well in excess of 8000 hrs lifetime at 100 Cd/m2, tested in air. We also were able to produce devices which met the voltage target of >1500 hours below 15V operation. After completing the initial performance milestones, we went on to focus on color-related degradation issues which were cited as important to commercialization of the technology by our manufacturing partners. We also put additional focus on cathode work as the active material development that occurred over the STTR time period required an adaptation of the cathode from the original cathode formulations which were developed based on previous generation active layer materials. We were able to improve compatibility of the cathode with some of the newer generation active layer materials and improve device yield and voltage behavior. An additional objective of the initial Phase II was to further develop the underlying manufacturing technology and real-life product specifications. This is a key requirement that must be met to ensure eventual commercialization of this DOE-funded technology. The link between commercial investment for full commercialization and R&D efforts in OLED solid State Lighting is often a large one. Add-Vision's lower cost, printed OLED manufacturing approach is an attraction, but close engagement with manufacturing partners and addressing customer specifications is a very important link. Manufacturing technology encompasses development of moisture reduction encapsulation technology, improved cost performance, and reductions in operating voltage through thinner and higher uniformity active device layers. We have now installed a pilot encapsulation system at AVI for controlled, high throughput lamination encapsulation of flexible OLEDs in a novel process. Along with this, we have developed, with our materials supply partners, adhesives, barrier films and other encapsulation materials and we are showing total air product lifetimes in the 2-4 years range from a process consistent with our throughput goals of {approx}1M device per month ({approx}30,000 sq. ft. of processed OLEDs). Within the last year of the project, we have been working to introduce the manufacturing improvements made in our LEP deposition and annealing process to our commercial partners. Based on the success of this, a pilot scale-up program was begun. During this process, Add-Vision was acquired by a strategic partner, in no small part, because of the promise of future success of the technology as evidenced by our commercial partners pilot scale-up plans. Overall, the performance, manufacturing and product work in this project has been successful. Additional analysis and device work at LBL has also shown a unique adhesion change with device bias stressing which may result from active layer polymer cross-linking during bias stressing of device. It was shown that even small bias stresses, as a fraction of a full device lifetime stress period, result in measurable chemical change in the device. Further work needs to be conducted to fully understand the chemical nature of this interaction. Elucidation of this effect would enable doped OLED formulation to be engineered to suppress this effect and further extend lifetimes and reduce voltage climb.

  3. On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    . Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, "Origin of efficiency droop in Ga. Tansu, "Current injection efficiency induced efficiency-droop in InGaN quantum well light. Van de Walle, "Indirect Auger recombination as a cause of efficiency droop in nitride light

  4. DOE Announces Selections for SSL Core Technology (Round 6), Product...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Transparent Conductive Hole Injection Electrode for Organic Light-Emitting Diode (OLED) SSL Team Members: Plextronics Inc. Summary: This project seeks to...

  5. NETL F 451.1/1-1, Categorical Exclusion Designation Form

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    12-month development project that culminates in the development an Organic Light Emitting Diode (OLED) luminaire that features a base stationpanel integrated driver...

  6. Fabrication of ZnO photonic crystals by nanosphere lithography using inductively coupled-plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the ZnO/GaN heterojunction light emitting diodes

    SciTech Connect (OSTI)

    Chen, Shr-Jia; Chang, Chun-Ming; Kao, Jiann-Shiun; Chen, Fu-Rong; Tsai, Chuen-Horng [Engineering and System Science, National Tsing Hua University, Hsinchu, 30013 Taiwan (China); Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu, 300 Taiwan (China); Engineering and System Science, National Tsing Hua University, Hsinchu, 30013 Taiwan (China)

    2010-07-15T23:59:59.000Z

    This article reports fabrication of n-ZnO photonic crystal/p-GaN light emitting diode (LED) by nanosphere lithography to further booster the light efficiency. In this article, the fabrication of ZnO photonic crystals is carried out by nanosphere lithography using inductively coupled plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the n-ZnO/p-GaN heterojunction LEDs. The CH{sub 4}/H{sub 2}/Ar mixed gas gives high etching rate of n-ZnO film, which yields a better surface morphology and results less plasma-induced damages of the n-ZnO film. Optimal ZnO lattice parameters of 200 nm and air fill factor from 0.35 to 0.65 were obtained from fitting the spectrum of n-ZnO/p-GaN LED using a MATLAB code. In this article, we will show our recent result that a ZnO photonic crystal cylinder has been fabricated using polystyrene nanosphere mask with lattice parameter of 200 nm and radius of hole around 70 nm. Surface morphology of ZnO photonic crystal was examined by scanning electron microscope.

  7. Bright three-band white light generated from CdSe/ZnSe quantum dot-assisted Sr{sub 3}SiO{sub 5}:Ce{sup 3+},Li{sup +}-based white light-emitting diode with high color rendering index

    SciTech Connect (OSTI)

    Jang, Ho Seong; Kwon, Byoung-Hwa; Jeon, Duk Young [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Yang, Heesun [Department of Materials Science and Engineering, Hongik University, 72-1, Sangsu-dong, Mapo-gu, Seoul 121-791 (Korea, Republic of)

    2009-10-19T23:59:59.000Z

    In this study, bright three-band white light was generated from the CdSe/ZnSe quantum dot (QD)-assisted Sr{sub 3}SiO{sub 5}:Ce{sup 3+},Li{sup +}-based white light-emitting diode (WLED). The CdSe/ZnSe core/shell structure was confirmed by energy dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy. The CdSe/ZnSe QDs showed high quantum efficiency (79%) and contributed to the high luminous efficiency ({eta}{sub L}) of the fabricated WLED. The WLED showed bright natural white with excellent color rendering property ({eta}{sub L}=26.8 lm/W, color temperature=6140 K, and color rendering index=85) and high stability against the increase in forward bias currents from 20 to 70 mA.

  8. Energy Department Announces $10 Million for Innovative, Energy...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    the country. This funding will accelerate the development of high-quality light-emitting diode (LED) and organic light-emitting diode (OLED) products with the potential to...

  9. Energy Department Announces $10 Million to Advance Innovative...

    Broader source: Energy.gov (indexed) [DOE]

    the country. This funding will help accelerate the development of high-quality light-emitting diode (LED) and organic light-emitting diode (OLED) products with the potential to...

  10. PUBLISHED ONLINE: 21 JULY 2013 | DOI: 10.1038/NMAT3711 User-interactive electronic skin for instantaneous

    E-Print Network [OSTI]

    California at Irvine, University of

    diode display with red, green and blue pixels. In this system, organic light-emitting diodes (OLEDs pressure but also provides an instantaneous visual response through a built-in active-matrix organic light-emitting

  11. Triplet Formation by Charge Recombination in Thin Film Blends of Perylene Red and Pyrene: Developing a Target Model for the

    E-Print Network [OSTI]

    van Stokkum, Ivo

    , photovoltaic cells, field effect transistors, and light-emitting diodes. These activities are aimed at product in xerography,9 organic field-effect transistors (OFETs),3,10 organic light-emitting diodes (OLEDs),11

  12. Organic light emitting device structure for obtaining chromaticity stability

    DOE Patents [OSTI]

    Tung, Yeh-Jiun (Princeton, NJ); Ngo, Tan (Levittown, PA)

    2007-05-01T23:59:59.000Z

    The present invention relates to organic light emitting devices (OLEDs). The devices of the present invention are efficient white or multicolored phosphorescent OLEDs which have a high color stability over a wide range of luminances. The devices of the present invention comprise an emissive region having at least two emissive layers, with each emissive layer comprising a different host and emissive dopant, wherein at least one of the emissive dopants emits by phosphorescence.

  13. Light Computing

    E-Print Network [OSTI]

    Gordon Chalmers

    2006-10-13T23:59:59.000Z

    A configuration of light pulses is generated, together with emitters and receptors, that allows computing. The computing is extraordinarily high in number of flops per second, exceeding the capability of a quantum computer for a given size and coherence region. The emitters and receptors are based on the quantum diode, which can emit and detect individual photons with high accuracy.

  14. DOE Announces Selections from Solid-State Lighting Product Development...

    Broader source: Energy.gov (indexed) [DOE]

    stephanie.anderson@sylvania.com Recipient: SRI International Title: Cavity Light-Emitting Diode for Durable, High-Brightness and High-Efficiency Lighting Applications Summary:...

  15. Energy Department Provides $7 Million for Solid-State Lighting...

    Broader source: Energy.gov (indexed) [DOE]

    20 percent Duration: 24 months SRI International (Menlo Park, CA): Cavity Light-Emitting Diode for Durable, High-Brightness and High-Efficiency Lighting Applications. This...

  16. Consumer Light Bulb Changes: Briefing and Resources for Media...

    Broader source: Energy.gov (indexed) [DOE]

    flux") - CFL: Compact Fluorescent Lamp: The curly fluorescent bulbs - LED: Light Emitting Diode: more recently emerging technology, also called "solid state lighting" as it is...

  17. alingap light emitting: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    show a low threshold voltage for light emission of Potma, Eric Olaf 4 LIGHT EMITTING DIODE CHARACTERISTICS (SAMPLE LAB WRITEUP) Engineering Websites Summary: , 1997...

  18. Diode-pumped laser with improved pumping system

    DOE Patents [OSTI]

    Chang, Jim J.

    2004-03-09T23:59:59.000Z

    A laser wherein pump radiation from laser diodes is delivered to a pump chamber and into the lasing medium by quasi-three-dimensional compound parabolic concentrator light channels. The light channels have reflective side walls with a curved surface and reflective end walls with a curved surface. A flow tube between the lasing medium and the light channel has a roughened surface.

  19. LED Traffic Light as a Communications Device Grantham Pang, Thomas Kwan, Chi-Ho Chan, Hugh Liu.

    E-Print Network [OSTI]

    Pang, Grantham

    :http://www.eee.hku.hk/~gpang Abstract The visible light from an LED (light emitting diode) traffic light can be modulated and encoded on the description of an audio information system made up of high brightness, visible light emitting diodes (LEDs messages 1. Introduction Recently, high intensity light emitting diodes for traffic signals are available

  20. Seventh International Conference on Solid State Lighting, Edited by Ian T. Ferguson, Nadarajah Narendran, Tsunemasa Taguchi, Ian E. Ashdown,

    E-Print Network [OSTI]

    Weiss, Sharon

    Selenide, Nanocrystal, Photoluminescence, Phosphor, White Light, Light Emitting Diode, LED 1. INTRODUCTION 1.1 Solid state lighting and white-light LEDs The use of white light emitting diodes (LEDs emitting diodes[11] , though they are a less mature technology as compared to inorganic semiconductor

  1. Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a

    E-Print Network [OSTI]

    Okamoto, Koichi

    is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

  2. Diode pumped alkali vapor fiber laser

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Beach, Raymond J. (Livermore, CA); Dawson, Jay W. (Livermore, CA); Krupke, William F. (Pleasanton, CA)

    2007-10-23T23:59:59.000Z

    A method and apparatus is provided for producing near-diffraction-limited laser light, or amplifying near-diffraction-limited light, in diode pumped alkali vapor photonic-band-gap fiber lasers or amplifiers. Laser light is both substantially generated and propagated in an alkali gas instead of a solid, allowing the nonlinear and damage limitations of conventional solid core fibers to be circumvented. Alkali vapor is introduced into the center hole of a photonic-band-gap fiber, which can then be pumped with light from a pump laser and operated as an oscillator with a seed beam, or can be configured as an amplifier.

  3. Diode pumped alkali vapor fiber laser

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Beach, Raymond J. (Livermore, CA); Dawson, Jay W. (Livermore, CA); Krupke, William F. (Pleasanton, CA)

    2006-07-26T23:59:59.000Z

    A method and apparatus is provided for producing near-diffraction-limited laser light, or amplifying near-diffraction-limited light, in diode pumped alkali vapor photonic-band-gap fiber lasers or amplifiers. Laser light is both substantially generated and propagated in an alkali gas instead of a solid, allowing the nonlinear and damage limitations of conventional solid core fibers to be circumvented. Alkali vapor is introduced into the center hole of a photonic-band-gap fiber, which can then be pumped with light from a pump laser and operated as an oscillator with a seed beam, or can be configured as an amplifier.

  4. Novel phosphors for solid state lighting

    E-Print Network [OSTI]

    Furman, Joshua D

    2010-11-16T23:59:59.000Z

    Solid state white light emitting diode lighting devices outperform conventional light sources in terms of lifetime, durability, and lumens per watt. However, the capital contribution is still to high to encourage widespread adoption. Furthermore...

  5. Strong blue and white photoluminescence emission of BaZrO{sub 3} undoped and lanthanide doped phosphor for light emitting diodes application

    SciTech Connect (OSTI)

    Romero, V.H. [Centro de Investigaciones en Optica, A. P. 1-948, Leon Gto., 37160 (Mexico)] [Centro de Investigaciones en Optica, A. P. 1-948, Leon Gto., 37160 (Mexico); De la Rosa, E., E-mail: elder@cio.mx [Centro de Investigaciones en Optica, A. P. 1-948, Leon Gto., 37160 (Mexico); Salas, P. [Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, A.P. 1-1010, Queretaro, Qro. 76000 (Mexico)] [Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, A.P. 1-1010, Queretaro, Qro. 76000 (Mexico); Velazquez-Salazar, J.J. [Department of Physics and Astronomy, The University of Texas at San Antonio One UTSA Circle, San Antonio TX 78249 (United States)] [Department of Physics and Astronomy, The University of Texas at San Antonio One UTSA Circle, San Antonio TX 78249 (United States)

    2012-12-15T23:59:59.000Z

    In this paper, we report the obtained strong broadband blue photoluminescence (PL) emission centered at 427 nm for undoped BaZrO{sub 3} observed after 266 nm excitation of submicron crystals prepared by hydrothermal/calcinations method. This emission is enhanced with the introduction of Tm{sup 3+} ions and is stronger than the characteristic PL blue emission of such lanthanide. The proposed mechanism of relaxation for host lattice emission is based on the presence of oxygen vacancies produced during the synthesis process and the charge compensation due to the difference in the electron valence between dopant and substituted ion in the host. Brilliant white light emission with a color coordinate of (x=0.29, y=0.32) was observed by combining the blue PL emission from the host with the green and red PL emission from Tb{sup 3+} and Eu{sup 3+} ions, respectively. The color coordinate can be tuned by changing the ratio between blue, green and red band by changing the concentration of lanthanides. - Graphical abstract: Strong blue emission from undoped BaZrO{sub 3} phosphor and white light emission by doping with Tb{sup 3+} (green) and Eu{sup 3+} (red) after 266 nm excitation. Highlights: Black-Right-Pointing-Pointer Blue emission from BaZrO{sub 3} phosphor. Black-Right-Pointing-Pointer Blue emission enhanced with Tm{sup 3+}. Black-Right-Pointing-Pointer White light from BaZrO{sup 3+} phosphor.

  6. Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al{sub 2}O{sub 3} films and Al{sub 2}O{sub 3}/a-SiN{sub x}:H stacks

    SciTech Connect (OSTI)

    Keuning, W.; Weijer, P. van de; Lifka, H.; Kessels, W. M. M.; Creatore, M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Philips Research Laboratories, High Tech Campus 4, P.O. Box WAG12, 5656 AE Eindhoven (Netherlands); Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

    2012-01-15T23:59:59.000Z

    Al{sub 2}O{sub 3} thin films synthesized by plasma-enhanced atomic layer deposition (ALD) at room temperature (25 deg. C) have been tested as water vapor permeation barriers for organic light emitting diode devices. Silicon nitride films (a-SiN{sub x}:H) deposited by plasma-enhanced chemical vapor deposition served as reference and were used to develop Al{sub 2}O{sub 3}/a-SiN{sub x}:H stacks. On the basis of Ca test measurements, a very low intrinsic water vapor transmission rate of {<=} 2 x 10{sup -6} g m{sup -2} day{sup -1} and 4 x 10{sup -6} g m{sup -2} day{sup -1} (20 deg. C/50% relative humidity) were found for 20-40 nm Al{sub 2}O{sub 3} and 300 nm a-SiN{sub x}:H films, respectively. The cathode particle coverage was a factor of 4 better for the Al{sub 2}O{sub 3} films compared to the a-SiN{sub x}:H films and an average of 0.12 defects per cm{sup 2} was obtained for a stack consisting of three barrier layers (Al{sub 2}O{sub 3}/a-SiN{sub x}:H/Al{sub 2}O{sub 3}).

  7. All-optical remote monitoring of propane gas using a 5-km-long, low-loss optical fiber link and an InGaP light-emitting diode in the 1. 68-. mu. m region

    SciTech Connect (OSTI)

    Chan, K.; Ito, H.; Inaba, H.

    1984-08-01T23:59:59.000Z

    We report the fully optical remote detection of low-level propane (C/sub 3/H/sub 8/) gas realized by the scheme based on a long distance, very low-loss silica optical fiber link connected to a compact absorption cell in conjunction with a high radiant InGaP light-emitting diode at 1.68 ..mu..m. For this application, the near-infrared absorption spectrum of propane was measured and studied to find very complicated bands around 1.69, 1.53, and 1.38 ..mu..m. This simple system, employing a 5-km-long silica optical fiber link, was demonstrated to be capable of achieving reproducibly the detection sensitivity less than 2.4 Torr for propane gas in air, i.e., about 14% of the lower explosion limit of propane density. This result verifies a large capability for major applications to various strategic points within the environment, such as industrial complexes as well as urban and residential areas, with considerably increased reliability and safety over the existing techniques.

  8. A novel red phosphor Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} for near UV white light-emitting diodes

    SciTech Connect (OSTI)

    Yang, Zhigang; Zhao, Zhengyan; Shi, Yurong; Wang, Yuhua, E-mail: wyh@lzu.edu.cn

    2013-10-15T23:59:59.000Z

    Graphical abstract: - Highlights: • Novel red phosphor Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} was prepared by solid-state reaction. • Excitation spectra suggested an obvious absorption in near-ultraviolet region. • Under 392 nm excitation, the phosphors exhibited a red emission at 614 nm. • Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} could be potentially applied in near UV white LEDs. - Abstract: A novel red phosphor Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} was synthesized using a solid-state reaction method, and its luminescence characteristics and charge compensators effect (Li{sup +}, Na{sup +}, K{sup +}) were investigated. The excitation spectra showed a obvious absorption in near-ultraviolet region. Under 392 nm excitation, the phosphors exhibited an intense red emission at 614 nm. The Commission Internationale de l’Eclairage (CIE) chromaticity coordinates and quantum efficiency (QE) were (0.65, 0.35) and 62.3%, respectively. The good color saturation, high quantum efficiency and small thermal-quenching properties indicate that Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} could be potentially applied in near UV white light-emitting diodes.

  9. Vortex diode jet

    DOE Patents [OSTI]

    Houck, Edward D. (Idaho Falls, ID)

    1994-01-01T23:59:59.000Z

    A fluid transfer system that combines a vortex diode with a jet ejector to transfer liquid from one tank to a second tank by a gas pressurization method having no moving mechanical parts in the fluid system. The vortex diode is a device that has a high resistance to flow in one direction and a low resistance to flow in the other.

  10. Lighting

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh SchoolIn12electron 9 5Let us countLighting Sign In About | Careers |

  11. Next Generation Hole Injection/Transport Nano-Composites for High Efficiency OLED Development

    SciTech Connect (OSTI)

    King Wang

    2009-07-31T23:59:59.000Z

    The objective of this program is to use a novel nano-composite material system for the OLED anode coating/hole transport layer. The novel anode coating is intended to significantly increase not only hole injection/transport efficiency, but the device energy efficiency as well. Another goal of the Core Technologies Program is the optimization and scale-up of air-stable and cross-linkable novel HTL nano-composite materials synthesis and the development of low-cost, large-scale mist deposition processes for polymer OLED fabrication. This proposed technology holds the promise to substantially improve OLED energy efficiency and lifetime.

  12. High efficiency light source using solid-state emitter and down-conversion material

    SciTech Connect (OSTI)

    Narendran, Nadarajah (Clifton Park, NY); Gu, Yimin (Troy, NY); Freyssinier, Jean Paul (Troy, NY)

    2010-10-26T23:59:59.000Z

    A light emitting apparatus includes a source of light for emitting light; a down conversion material receiving the emitted light, and converting the emitted light into transmitted light and backward transmitted light; and an optic device configured to receive the backward transmitted light and transfer the backward transmitted light outside of the optic device. The source of light is a semiconductor light emitting diode, a laser diode (LD), or a resonant cavity light emitting diode (RCLED). The down conversion material includes one of phosphor or other material for absorbing light in one spectral region and emitting light in another spectral region. The optic device, or lens, includes light transmissive material.

  13. Multi-Wavelength Visible Light Communication System Design Pankil Butala 1a

    E-Print Network [OSTI]

    Little, Thomas

    -converted light emitting diodes, or by filtering to iso- late the blue component from these sources. Multi efficient illumination devices called light emitting diodes (LED). The intensity of radiant flux emitted

  14. advanced semiconductor light-emitting: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode Engineering Websites Summary: light-emitting diode Alexei A. Erchak,a) Daniel...

  15. Evaluation of potential applications for templated arrays of heterostructural semiconductor nanowires as light emitting devices

    E-Print Network [OSTI]

    Zou, Ting, M. Eng. Massachusetts Institute of Technology

    2006-01-01T23:59:59.000Z

    While light emitting devices, such as laser diodes (LDs) and light emitting diodes (LEDs), were first introduced decades ago, they have been the subject of continuing research and improvements due to their relatively poor ...

  16. Bathroom lights generally operate between five to eight hours per occupied

    E-Print Network [OSTI]

    -specific luminaire that integrates a low-wattage light-emitting diode (LED) nightlight and an occupancy sensor

  17. Many exterior entry lights in residential and commercial applications use two-

    E-Print Network [OSTI]

    , and replacement CFLs are not widely stocked. The Light-Emitting Diode (LED) Hybrid Security Fixture combines

  18. Vision Research 41 (2001) 427439 Characterization and use of a digital light projector for vision

    E-Print Network [OSTI]

    Brainard, David H.

    2001-01-01T23:59:59.000Z

    . For example, a light emitting diode (LED)-based stimulator has many ideal characteristics. LEDs have high

  19. Process development for the fabrication of light emitting vacuum field emission triodes

    E-Print Network [OSTI]

    Williams, Roger T.

    1994-01-01T23:59:59.000Z

    . Light emitting diodes and triodes are also fabricated to address the feasibility of their application to flat panel displays....

  20. aqueous vanadium pentoxide: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    diodes Materials Science Websites Summary: to be an efficient anode for organic light-emitting diode OLED X. L. Zhu, J. X. Sun, H. J. Peng, Z. G. Meng, M. Wong an ultrathin...

  1. activation vanadium alloys: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    diodes Materials Science Websites Summary: to be an efficient anode for organic light-emitting diode OLED X. L. Zhu, J. X. Sun, H. J. Peng, Z. G. Meng, M. Wong an ultrathin...

  2. anodic tantala films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    diodes Materials Science Websites Summary: to be an efficient anode for organic light-emitting diode OLED X. L. Zhu, J. X. Sun, H. J. Peng, Z. G. Meng, M. Wong an ultrathin...

  3. activation vanadium alloy: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    diodes Materials Science Websites Summary: to be an efficient anode for organic light-emitting diode OLED X. L. Zhu, J. X. Sun, H. J. Peng, Z. G. Meng, M. Wong an ultrathin...

  4. Department of Energy Office of Energy Efficiency and Renewable Energy Solid State Lighting Core Technologies

    SciTech Connect (OSTI)

    Franky So; Paul Holloway; Jiangeng Xue

    2009-08-06T23:59:59.000Z

    The project objective is to demonstrate high efficiency white emitting OLED devices with a target luminous efficiency between 100 1m/W and 150 1m/W with integrated microcavity structure and down conversion phosphors. The main focus of this work will be on three areas: (1) demonstration of a 2X reduction in OLED device operating voltage by employing the appropriate dopants in the carrier transporting layers; (2) demonstration of a 3X light out-coupling efficiency enhancement by incorporating microcavity structure in the OLED devices; and (3) demonstration of a 2X down-conversion efficiency enhancement (from blue to white) using phosphors.

  5. Ion implanted step recovery diodes - influence of material parameter variations

    E-Print Network [OSTI]

    Mosman, Thomas Michael

    1974-01-01T23:59:59.000Z

    on the successful application of ion implantation in the fabrication of an improved step recovery diode (SRD). At the same time a comprehensive account of the actual device processing will bring to light the problems and difficulties that are ordinarily...ION IMPLANTED STEP RECOVERY DIODES ? INFLUENCE OF MATERIAL PARAMETER VARIATIONS A Thesis by THOMAS MICHAEL MOSMAN Submitted to the Craduate College of Texas ARM University in partial fulfillment of the requirement for the degree of MASTER...

  6. Smart Lighting ERC Industrial Speaker Series

    E-Print Network [OSTI]

    Varela, Carlos

    . About Crystal IS Crystal IS Inc. is the world leading manufacturer of ultraviolet light emitting diodes on native AlN high-quality substrates. These layers are fabricated into mid- ultraviolet light emitting diodes with peak wavelengths in the range of 240-275 nm. The low threading dislocation density

  7. Method to generate high efficient devices which emit high quality light for illumination

    DOE Patents [OSTI]

    Krummacher, Benjamin C. (Sunnyvale, CA); Mathai, Mathew (Santa Clara, CA); Choong, Vi-En (San Jose, CA); Choulis, Stelios A. (San Jose, CA)

    2009-06-30T23:59:59.000Z

    An electroluminescent apparatus includes an OLED device emitting light in the blue and green spectrums, and at least one down conversion layer. The down conversion layer absorbs at least part of the green spectrum light and emits light in at least one of the orange spectra and red spectra.

  8. New Family of Tiny Crystals Glow Bright in LED Lights | Advanced...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    crystals that glow different colors may be the missing ingredient for white light-emitting diode (LED) lighting that illuminates homes and offices as effectively as natural...

  9. Solid-State Lighting Patents Resulting from DOE-Funded Projects

    Broader source: Energy.gov (indexed) [DOE]

    Lens Placement NP * LED Structure with Enhanced Mirror Reflectivity NP, PCT * Light Emitting Diode With High Aspect Ratio Submicron Roughness for Light Extraction and Methods of...

  10. Energy 101: Lighting Choices | Department of Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in your home to energy-saving incandescent, compact fluorescent lamp (CFL), or light emitting diode (LED) bulbs could save you about 50 per year. For more information on lighting...

  11. 3654 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 24, NO. 10, OCTOBER 2006 High-Sensitivity Detection of Narrowband Light in a

    E-Print Network [OSTI]

    Guillas, Serge

    -emitting diode (LED), narrowband-filtered white light, and LED signal sources in a more intense tungsten-halogen-lamp

  12. Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition

    SciTech Connect (OSTI)

    Ishikawa, M.; Ohba, Y.; Sugawara, H.; Yamamoto, M.; Nakanisi, T.

    1986-01-20T23:59:59.000Z

    Room-temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24C were obtained for an inner stripe structure laser diode with a 250- m-long and 7- m stripe geometry. The laser operated at up to 51C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cmS, was obtained with a 20- m stripe width laser diode under room-temperature pulsed operation.

  13. Over the past decade, lighting became more efficient across all...

    Broader source: Energy.gov (indexed) [DOE]

    of light output (in lumen-hours) provided by each lamp type. "Other" includes light-emitting diode (LED) lamps as well as other lamps such as fiber optic lights, induction lamps,...

  14. ambient light hikari: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    is the light emitted by the object itself, such as the glow from a TV screen, a light-emitting diode, or a star. "Ambient" light is an illumination that seems to come from all...

  15. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01T23:59:59.000Z

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  16. Adhesion and degradation of organic and hybrid organic-inorganic light-emitting devices

    SciTech Connect (OSTI)

    Momodu, D. Y.; Chioh, A. V. [Department of Materials Science and Engineering, African University of Science and Technology, Federal Capital Territory, Abuja (Nigeria); Tong, T. [Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544 (United States); Princeton Institute of Science and Technology of Materials (PRISM), Princeton University, Princeton, New Jersey 08544 (United States); Zebaze Kana, M. G. [Physics Advanced Laboratory, Sheda Science and Technology Complex, Abuja (Nigeria); Department of Materials Science and Engineering, Kwara State University, Malete (Nigeria); Soboyejo, W. O. [Department of Materials Science and Engineering, African University of Science and Technology, Federal Capital Territory, Abuja (Nigeria); Princeton Institute of Science and Technology of Materials (PRISM), Princeton University, Princeton, New Jersey 08544 (United States); Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544 (United States)

    2014-02-28T23:59:59.000Z

    This paper presents the results of a combined analytical, computational, and experimental study of adhesion and degradation of Organic Light Emitting Devices (OLEDs). The adhesion between layers that are relevant to OLEDs is studied using an atomic force microscopy technique. The interfacial failure mechanisms associated with blister formation in OLEDs and those due to the addition of TiO{sub 2} nanoparticles into the active regions are then elucidated using a combination of fracture mechanics, finite element modeling and experiments. The blisters observed in the models are shown to be consistent with the results from adhesion, interfacial fracture mechanics models, and prior reports of diffusion-assisted phenomena. The implications of the work are then discussed for the design of OLED structures with improved lifetimes and robustness.

  17. TOMORROW: Department of Energy to Announce Philips Lighting North...

    Office of Environmental Management (EM)

    American consumers and businesses money. Philips developed a highly efficient light emitting diode (LED) bulb to meet rigorous requirements of the L Prize competition - ensuring...

  18. Solid-State Lighting Manufacturing Workshop | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and to help define a new DOE manufacturing initiative to reduce the cost of light-emitting diode (LED) products to competitive levels, ensure high product quality and...

  19. advanced uv light: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    17 White emitting polyfluorene functionalized with azide hybridized on near-UV light emitting diode Materials Science Websites Summary: White emitting polyfluorene functionalized...

  20. amyloidogenic light chain: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Page Topic Index 21 Side-chain functionalized luminescent polymers for organic light-emitting diode applications. Open Access Theses and Dissertations Summary: ??This thesis aims...