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Sample records for determination rockingham memorial

  1. Rockingham County, Virginia: Energy Resources | Open Energy Informatio...

    Open Energy Info (EERE)

    Climate Zone Number 4 Climate Zone Subtype A. Places in Rockingham County, Virginia Bridgewater, Virginia Broadway, Virginia Dayton, Virginia Elkton, Virginia Grottoes, Virginia...

  2. Determining Memory Use | Argonne Leadership Computing Facility

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Allinea DDT Core File Settings Determining Memory Use Using VNC with a Debugger bgq_stack gdb Coreprocessor Runjob termination TotalView Performance Tools & APIs Software & Libraries IBM References Cooley Policies Documentation Feedback Please provide feedback to help guide us as we continue to build documentation for our new computing resource. [Feedback Form] Determining Memory Use Determining the amount of memory available during the execution of the program requires the use of

  3. Rockingham County- Small Wind Ordinance

    Broader source: Energy.gov [DOE]

    Although net metering is not required, the ordinance complements the state's net-metering regulations and requires compliance with the Uniform Statewide Building Code, FAA Regulations, National...

  4. Memory Considerations

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Memory Considerations Memory Considerations Memory Usage Considerations on Franklin Each Franklin compute node has 8 GB (8192 MB) of physical memory, but, not all that memory is...

  5. Memory Considerations

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Memory Considerations Memory Considerations Memory Usage Considerations on Hopper Most Hopper compute nodes have 32 GB of physical memory, but, not all that memory is available to...

  6. Memorandum Memorializing Ex Parte Communication, DOE impending...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Memorandum Memorializing Ex Parte Communication, DOE impending determination of coverage ... More Documents & Publications Memorandum Memorializing Ex Parte Communication, November 9, ...

  7. Determination of uranium and thorium in semiconductor memory materials by high fluence neutron activation analysis

    SciTech Connect (OSTI)

    Dyer, F.F.; Emery, J.F.; Northcutt, K.J.; Scott, R.M.

    1981-01-01

    Uranium and thorium were measured by absolute neutron activation analysis in high-purity materials used to manufacture semiconductor memories. The main thrust of the study concerned aluminum and aluminum alloys used as sources for thin film preparation, evaporated metal films, and samples from the Czochralski silicon crystal process. Average levels of U and Th were found for the source alloys to be approx. 65 and approx. 45 ppB, respectively. Levels of U and Th in silicon samples fell in the range of a few parts per trillion. Evaporated metal films contained about 1 ppB U and Th, but there is some question about these results due to the possibility of contamination.

  8. Memory Considerations

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Memory Considerations Memory Considerations Memory Usage Considerations on Edison Edison compute nodes have 64 GB of physical memory (2.67GB per core), but not all the memory is available to user programs. Compute Node Linux (the kernel), the Lustre file system software, and message passing library buffers all consume memory, as does loading the executable into the memory. Thus the precise memory available to an application varies. Approximately 61 GB of memory can be allocated from within an

  9. Memory Considerations

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Memory Considerations Memory Considerations Memory Usage Considerations on Franklin Each Franklin compute node has 8 GB (8192 MB) of physical memory, but, not all that memory is available to user programs. Compute Node Linux (the kernel), the Lustre file system software, and message passing library buffers all consume memory, as does loading the executable into memory. Thus the precise memory available to an application varies, approximately 7566 MB (7.38 GB) of memory can be allocated from

  10. Memory Considerations

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Memory Considerations Memory Considerations Memory Usage Considerations on Hopper Most Hopper compute nodes have 32 GB of physical memory, but, not all that memory is available to user programs. Compute Node Linux (the kernel), the Lustre file system software, and message passing library buffers all consume memory, as does loading the executable into memory. Thus the precise memory available to an application varies. Approximately 31 GB of memory can be allocated from within an MPI program using

  11. CX-003991: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    BizFuelCX(s) Applied: B5.1Date: 09/22/2010Location(s): Rockingham County, North CarolinaOffice(s): Energy Efficiency and Renewable Energy, Golden Field Office

  12. Mechanical memory

    DOE Patents [OSTI]

    Gilkey, Jeffrey C.; Duesterhaus, Michelle A.; Peter, Frank J.; Renn, Rosemarie A.; Baker, Michael S.

    2006-08-15

    A first-in-first-out (FIFO) microelectromechanical memory apparatus (also termed a mechanical memory) is disclosed. The mechanical memory utilizes a plurality of memory cells, with each memory cell having a beam which can be bowed in either of two directions of curvature to indicate two different logic states for that memory cell. The memory cells can be arranged around a wheel which operates as a clocking actuator to serially shift data from one memory cell to the next. The mechanical memory can be formed using conventional surface micromachining, and can be formed as either a nonvolatile memory or as a volatile memory.

  13. Mechanical memory

    DOE Patents [OSTI]

    Gilkey, Jeffrey C.; Duesterhaus, Michelle A.; Peter, Frank J.; Renn, Rosemarie A.; Baker, Michael S.

    2006-05-16

    A first-in-first-out (FIFO) microelectromechanical memory apparatus (also termed a mechanical memory) is disclosed. The mechanical memory utilizes a plurality of memory cells, with each memory cell having a beam which can be bowed in either of two directions of curvature to indicate two different logic states for that memory cell. The memory cells can be arranged around a wheel which operates as a clocking actuator to serially shift data from one memory cell to the next. The mechanical memory can be formed using conventional surface micromachining, and can be formed as either a nonvolatile memory or as a volatile memory.

  14. Memory Considerations

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Memory Considerations Memory Considerations Overview Carver login nodes each have 48GB of physical memory. Most compute nodes have 24GB; however, 80 compute nodes have 48GB. Not...

  15. Extended investigation of intermartensitic transitions in Ni-Mn-Ga magnetic shape memory alloys: A detailed phase diagram determination

    SciTech Connect (OSTI)

    Çakir, Asli; Aktürk, Selçuk; Righi, Lara

    2013-11-14

    Martensitic transitions in shape memory Ni-Mn-Ga Heusler alloys take place between a high temperature austenite and a low temperature martensite phase. However, intermartensitic transformations have also been encountered that occur from one martensite phase to another. To examine intermartensitic transitions in magnetic shape memory alloys in detail, we carried out temperature dependent magnetization, resistivity, and x-ray diffraction measurements to investigate the intermartensitic transition in Ni{sub 50}Mn{sub 50–x}Ga{sub x} in the composition range 12?x?25 at. %. Rietveld refined x-ray diffraction results are found to be consistent with magnetization and resistivity data. Depending on composition, we observe that intermartensitic transitions occur in the sequences 7M?L1{sub 0},?5M?7M, and 5M?7M?L1{sub 0} with decreasing temperature. The L1{sub 0} non-modulated structure is most stable at low temperature.

  16. Memory Considerations

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Memory Considerations Memory Considerations Overview Carver login nodes each have 48GB of physical memory. Most compute nodes have 24GB; however, 80 compute nodes have 48GB. Not all of this memory is available to user processes. Some memory is reserved for the Linux kernel. Furthermore, since Carver nodes have no disk, the "root" file system (including /tmp) is kept in memory ("ramdisk"). The kernel and root file system combined occupy about 4GB of memory. Therefore users

  17. Optical memory

    DOE Patents [OSTI]

    Mao, Samuel S; Zhang, Yanfeng

    2013-07-02

    Optical memory comprising: a semiconductor wire, a first electrode, a second electrode, a light source, a means for producing a first voltage at the first electrode, a means for producing a second voltage at the second electrode, and a means for determining the presence of an electrical voltage across the first electrode and the second electrode exceeding a predefined voltage. The first voltage, preferably less than 0 volts, different from said second voltage. The semiconductor wire is optically transparent and has a bandgap less than the energy produced by the light source. The light source is optically connected to the semiconductor wire. The first electrode and the second electrode are electrically insulated from each other and said semiconductor wire.

  18. Atomic memory access hardware implementations

    DOE Patents [OSTI]

    Ahn, Jung Ho; Erez, Mattan; Dally, William J

    2015-02-17

    Atomic memory access requests are handled using a variety of systems and methods. According to one example method, a data-processing circuit having an address-request generator that issues requests to a common memory implements a method of processing the requests using a memory-access intervention circuit coupled between the generator and the common memory. The method identifies a current atomic-memory access request from a plurality of memory access requests. A data set is stored that corresponds to the current atomic-memory access request in a data storage circuit within the intervention circuit. It is determined whether the current atomic-memory access request corresponds to at least one previously-stored atomic-memory access request. In response to determining correspondence, the current request is implemented by retrieving data from the common memory. The data is modified in response to the current request and at least one other access request in the memory-access intervention circuit.

  19. The Unobtrusive Memory Allocator

    Energy Science and Technology Software Center (OSTI)

    2003-03-31

    This library implements a memory allocator/manager which ask its host program or library for memory refions to manage rather than requesting them from the operating system. This allocator supports multiple distinct heaps within a single executable, each of which may grow either upward or downward in memory. The GNU mmalloc library has been modified in such a way that its allocation algorithms have been preserved, but the manner in which it obtains regions to managemore » has been changed to request memory from the host program or library. Additional modifications allow the allocator to manage each heap as either upward or downward-growing. By allowing the hosting program or library to determine what memory is managed, this package allows a greater degree of control than other memory allocation/management libraries. Additional distinguishing features include the ability to manage multiple distinct heaps with in a single executable, each of which may grow either upward or downward in memory. The most common use of this library is in conjunction with the Berkeley Unified Parallel C (UPC) Runtime Library. This package is a modified version of the LGPL-licensed "mmalloc" allocator from release 5.2 of the "gdb" debugger's source code.« less

  20. Patent: Shape memory polymers | DOEpatents

    Office of Scientific and Technical Information (OSTI)

    polymers Citation Details Title: Shape memory polymers

  1. Genepool Memory Heatmaps

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Genepool Memory Heatmaps Heatmap of Memory and Slots Requested vs Time Waited (in hours) | Queue: All | Last 7 Days Memory Requested Slots <5GB 5-10GB 10-20GB 20-30GB 30-40GB...

  2. Determination

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Determination of a Minimum Soiling Level to Affect Photovoltaic Devices Patrick D. Burton and Bruce H. King Sandia National Laboratories, Albuquerque, NM 87185 USA pdburto@sandia.gov Abstract-Soil accumulation on photovoltaic (PV) modules presents a challenge to long-term performance prediction and lifetime estimates due to the inherent difficulty in quantifying small changes over an extended period. Low mass loadings of soil are a common occurrence, but remain difficult to quantify. In order to

  3. Rockingham County, New Hampshire: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    New Hampshire Derry, New Hampshire East Kingston, New Hampshire Epping, New Hampshire Exeter, New Hampshire Fremont, New Hampshire Greenland, New Hampshire Hampstead, New...

  4. Rockingham County, North Carolina: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    North Carolina: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 36.4335041, -79.8296743 Show Map Loading map... "minzoom":false,"mappingservice...

  5. Nanoparticle shuttle memory

    DOE Patents [OSTI]

    Zettl, Alex Karlwalter

    2012-03-06

    A device for storing data using nanoparticle shuttle memory having a nanotube. The nanotube has a first end and a second end. A first electrode is electrically connected to the first end of the nanotube. A second electrode is electrically connected to the second end of the nanotube. The nanotube has an enclosed nanoparticle shuttle. A switched voltage source is electrically connected to the first electrode and the second electrode, whereby a voltage may be controllably applied across the nanotube. A resistance meter is also connected to the first electrode and the second electrode, whereby the electrical resistance across the nanotube can be determined.

  6. ARM - Cloud Memory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Memory Outreach Home Room News Publications Traditional Knowledge Kiosks Barrow, Alaska Tropical Western Pacific Site Tours Contacts Students Study Hall About ARM Global Warming FAQ Just for Fun Meet our Friends Cool Sites Teachers Teachers' Toolbox Lesson Plans Cloud Memory Now you can make your own cloud memory game to practice recognizing clouds at home or share with your class. Example (not to scale) of cloud memory card available for download. Example (not to scale) of cloud memory card

  7. Measuring and Understanding Memory Bandwidth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Measuring and Understanding Memory Bandwidth Measuring and Understanding Memory Bandwidth Measuring Bandwidth Usage Measuring memory bandwidth is a good way of understanding how...

  8. Extra-Large Memory Nodes

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Extra-Large Memory Nodes Extra-Large Memory Nodes Extra-Large Memory Nodes Overview Carver has two "extra-large" memory nodes; each node has four 8-core Intel X7550 ("Nehalem EX")...

  9. Performing an allreduce operation using shared memory

    SciTech Connect (OSTI)

    Archer, Charles J; Dozsa, Gabor; Ratterman, Joseph D; Smith, Brian E

    2014-06-10

    Methods, apparatus, and products are disclosed for performing an allreduce operation using shared memory that include: receiving, by at least one of a plurality of processing cores on a compute node, an instruction to perform an allreduce operation; establishing, by the core that received the instruction, a job status object for specifying a plurality of shared memory allreduce work units, the plurality of shared memory allreduce work units together performing the allreduce operation on the compute node; determining, by an available core on the compute node, a next shared memory allreduce work unit in the job status object; and performing, by that available core on the compute node, that next shared memory allreduce work unit.

  10. Performing an allreduce operation using shared memory

    DOE Patents [OSTI]

    Archer, Charles J.; Dozsa, Gabor; Ratterman, Joseph D.; Smith, Brian E.

    2012-04-17

    Methods, apparatus, and products are disclosed for performing an allreduce operation using shared memory that include: receiving, by at least one of a plurality of processing cores on a compute node, an instruction to perform an allreduce operation; establishing, by the core that received the instruction, a job status object for specifying a plurality of shared memory allreduce work units, the plurality of shared memory allreduce work units together performing the allreduce operation on the compute node; determining, by an available core on the compute node, a next shared memory allreduce work unit in the job status object; and performing, by that available core on the compute node, that next shared memory allreduce work unit.

  11. ELECTROSTATIC MEMORY SYSTEM

    DOE Patents [OSTI]

    Chu, J.C.

    1958-09-23

    An improved electrostatic memory system is de scribed fer a digital computer wherein a plarality of storage tubes are adapted to operate in either of two possible modes. According to the present irvention, duplicate storage tubes are provided fur each denominational order of the several binary digits. A single discriminator system is provided between corresponding duplicate tubes to determine the character of the infurmation stored in each. If either tube produces the selected type signal, corresponding to binazy "1" in the preferred embodiment, a "1" is regenerated in both tubes. In one mode of operation each bit of information is stored in two corresponding tubes, while in the other mode of operation each bit is stored in only one tube in the conventional manner.

  12. Measuring and Understanding Memory Bandwidth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Measuring and Understanding Memory Bandwidth Measuring and Understanding Memory Bandwidth Measuring Bandwidth Usage Measuring memory bandwidth is a good way of understanding how well your application uses cache memory. Today's processors are constructed under the assumption that a small amount of (expensive) fast memory - called "cache" - is used more often than a larger amount of slower memory (DRAM). The extent to which this assumption applies to your code is referred to as memory

  13. Conditional load and store in a shared memory

    DOE Patents [OSTI]

    Blumrich, Matthias A; Ohmacht, Martin

    2015-02-03

    A method, system and computer program product for implementing load-reserve and store-conditional instructions in a multi-processor computing system. The computing system includes a multitude of processor units and a shared memory cache, and each of the processor units has access to the memory cache. In one embodiment, the method comprises providing the memory cache with a series of reservation registers, and storing in these registers addresses reserved in the memory cache for the processor units as a result of issuing load-reserve requests. In this embodiment, when one of the processor units makes a request to store data in the memory cache using a store-conditional request, the reservation registers are checked to determine if an address in the memory cache is reserved for that processor unit. If an address in the memory cache is reserved for that processor, the data are stored at this address.

  14. Myrmics Memory Allocator

    Energy Science and Technology Software Center (OSTI)

    2011-09-23

    MMA is a stand-alone memory management system for MPI clusters. It implements a shared Partitioned Global Address Space, where multiple MPI processes request objects from the allocator and the latter provides them with system-wide unique memory addresses for each object. It provides applications with an intuitive way of managing the memory system in a unified way, thus enabling easier writing of irregular application code.

  15. System and method for programmable bank selection for banked memory subsystems

    DOE Patents [OSTI]

    Blumrich, Matthias A.; Chen, Dong; Gara, Alan G.; Giampapa, Mark E.; Hoenicke, Dirk; Ohmacht, Martin; Salapura, Valentina; Sugavanam, Krishnan

    2010-09-07

    A programmable memory system and method for enabling one or more processor devices access to shared memory in a computing environment, the shared memory including one or more memory storage structures having addressable locations for storing data. The system comprises: one or more first logic devices associated with a respective one or more processor devices, each first logic device for receiving physical memory address signals and programmable for generating a respective memory storage structure select signal upon receipt of pre-determined address bit values at selected physical memory address bit locations; and, a second logic device responsive to each of the respective select signal for generating an address signal used for selecting a memory storage structure for processor access. The system thus enables each processor device of a computing environment memory storage access distributed across the one or more memory storage structures.

  16. Using on-package memory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on-package memory Using on-package memory Introduction The NERSC-8 system will include a novel feature on its node architecture: 16 GB of high-bandwidth 3D stacked memory...

  17. Computer memory management system

    DOE Patents [OSTI]

    Kirk, III, Whitson John

    2002-01-01

    A computer memory management system utilizing a memory structure system of "intelligent" pointers in which information related to the use status of the memory structure is designed into the pointer. Through this pointer system, The present invention provides essentially automatic memory management (often referred to as garbage collection) by allowing relationships between objects to have definite memory management behavior by use of coding protocol which describes when relationships should be maintained and when the relationships should be broken. In one aspect, the present invention system allows automatic breaking of strong links to facilitate object garbage collection, coupled with relationship adjectives which define deletion of associated objects. In another aspect, The present invention includes simple-to-use infinite undo/redo functionality in that it has the capability, through a simple function call, to undo all of the changes made to a data model since the previous `valid state` was noted.

  18. Low latency memory access and synchronization

    DOE Patents [OSTI]

    Blumrich, Matthias A.; Chen, Dong; Coteus, Paul W.; Gara, Alan G.; Giampapa, Mark E.; Heidelberger, Philip; Hoenicke, Dirk; Ohmacht, Martin; Steinmacher-Burow, Burkhard D.; Takken, Todd E.; Vranas, Pavlos M.

    2007-02-06

    A low latency memory system access is provided in association with a weakly-ordered multiprocessor system. Each processor in the multiprocessor shares resources, and each shared resource has an associated lock within a locking device that provides support for synchronization between the multiple processors in the multiprocessor and the orderly sharing of the resources. A processor only has permission to access a resource when it owns the lock associated with that resource, and an attempt by a processor to own a lock requires only a single load operation, rather than a traditional atomic load followed by store, such that the processor only performs a read operation and the hardware locking device performs a subsequent write operation rather than the processor. A simple prefetching for non-contiguous data structures is also disclosed. A memory line is redefined so that in addition to the normal physical memory data, every line includes a pointer that is large enough to point to any other line in the memory, wherein the pointers to determine which memory line to prefetch rather than some other predictive algorithm. This enables hardware to effectively prefetch memory access patterns that are non-contiguous, but repetitive.

  19. Low latency memory access and synchronization

    DOE Patents [OSTI]

    Blumrich, Matthias A.; Chen, Dong; Coteus, Paul W.; Gara, Alan G.; Giampapa, Mark E.; Heidelberger, Philip; Hoenicke, Dirk; Ohmacht, Martin; Steinmacher-Burow, Burkhard D.; Takken, Todd E. , Vranas; Pavlos M.

    2010-10-19

    A low latency memory system access is provided in association with a weakly-ordered multiprocessor system. Bach processor in the multiprocessor shares resources, and each shared resource has an associated lock within a locking device that provides support for synchronization between the multiple processors in the multiprocessor and the orderly sharing of the resources. A processor only has permission to access a resource when it owns the lock associated with that resource, and an attempt by a processor to own a lock requires only a single load operation, rather than a traditional atomic load followed by store, such that the processor only performs a read operation and the hardware locking device performs a subsequent write operation rather than the processor. A simple prefetching for non-contiguous data structures is also disclosed. A memory line is redefined so that in addition to the normal physical memory data, every line includes a pointer that is large enough to point to any other line in the memory, wherein the pointers to determine which memory line to prefetch rather than some other predictive algorithm. This enables hardware to effectively prefetch memory access patterns that are non-contiguous, but repetitive.

  20. Memorandum Memorializing Ex Parte Communication, DOE impending

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    determination of coverage for commercial and industrial fans, blowers, and fume hoods. | Department of Energy DOE impending determination of coverage for commercial and industrial fans, blowers, and fume hoods. Memorandum Memorializing Ex Parte Communication, DOE impending determination of coverage for commercial and industrial fans, blowers, and fume hoods. The meeting was requested by AMCA International to introduce the association's leadership, standards, and experience in developing fan

  1. Using on-package memory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on-package memory Using on-package memory Introduction The NERSC-8 system will include a novel feature on its node architecture: 16 GB of high-bandwidth 3D stacked memory interposed between the KNL chip and the slower off-package DDR memory. Compared to the on-node DDR4 memory, the high-bandwidth memory (HBM) has approximately 5x the bandwidth but has similar latency. This new feature has the potential to accelerate those applications which are particularly sensitive to memory bandwidth limits.

  2. Extra-Large Memory Nodes

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Extra-Large Memory Nodes Extra-Large Memory Nodes Extra-Large Memory Nodes Overview Carver has two "extra-large" memory nodes; each node has four 8-core Intel X7550 ("Nehalem EX") 2.0 GHz processors (32 cores total) and 1TB memory. These nodes are available through the queue "reg_xlmem". They can be used for interactive and batch jobs that require large amount of memory (16GB per core or more). reg_xlmem queue Please refer to the "Queues and Policies" page

  3. Shape memory polymer medical device

    DOE Patents [OSTI]

    Maitland, Duncan; Benett, William J.; Bearinger, Jane P.; Wilson, Thomas S.; Small, IV, Ward; Schumann, Daniel L.; Jensen, Wayne A.; Ortega, Jason M.; Marion, III, John E.; Loge, Jeffrey M.

    2010-06-29

    A system for removing matter from a conduit. The system includes the steps of passing a transport vehicle and a shape memory polymer material through the conduit, transmitting energy to the shape memory polymer material for moving the shape memory polymer material from a first shape to a second and different shape, and withdrawing the transport vehicle and the shape memory polymer material through the conduit carrying the matter.

  4. New 1 Terabyte Memory Node

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New 1 Terabyte Memory Node New 1 Terabyte Memory Node June 17, 2011 by Francesca Verdier A new "extra large" memory node that has four 8-core Nehalem EX processors (32 cores total) and 1TB memory has been deployed in the Carver/Magellan complex. See Memory Considerations on Carver. Subscribe via RSS Subscribe Browse by Date January 2016 December 2015 November 2015 October 2015 September 2015 August 2015 July 2015 April 2015 March 2015 January 2015 December 2014 November 2014 October

  5. Shape memory alloy actuator

    DOE Patents [OSTI]

    Varma, Venugopal K.

    2001-01-01

    An actuator for cycling between first and second positions includes a first shaped memory alloy (SMA) leg, a second SMA leg. At least one heating/cooling device is thermally connected to at least one of the legs, each heating/cooling device capable of simultaneously heating one leg while cooling the other leg. The heating/cooling devices can include thermoelectric and/or thermoionic elements.

  6. Genepool Memory Heatmaps

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Genepool Memory Heatmaps Heatmap of Memory and Slots Requested vs Time Waited (in hours) | Queue: All | Last 7 Days Memory Requested Slots <5GB 5-10GB 10-20GB 20-30GB 30-40GB 40-50GB 50-100GB 100-150GB 150-200GB 200-256GB 256-512GB 512+GB Job Count Longest Wait 1 2.26 (2693) 10.5 (201167) 3.2 (11650) 0 1.75 (282) 1.49 (1627) 0.03 (1) 0 0 0 0 0 217420 538.96 2 0.26 (103) 1.02 (2817) 0 0 0 0 0 0 0 0 0 0 2920 9.1 4 1.55 (198) 1.48 (104) 0.34 (8) 0 0 0 1.86 (3) 0 0 0 0 0 313 20.48 6 0.01 (1) 0.09

  7. Memory-2014-salishan.key

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    WHAT'S NEXT? Bruce Jacob University of Maryland SLIDE Your Next Memory System Bruce Jacob University of Maryland PERSPECTIVE: 1 Cost for 10 GB Power for 10 GB...

  8. Carlsbad employees fund veteran memorial

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    regional veterans by purchasing and placing their own remembrance. On November 12, a dedication ceremony will recognize newly placed memorials in the Park, including one from LANL...

  9. Shape memory alloy thaw sensors

    DOE Patents [OSTI]

    Shahinpoor, Mohsen; Martinez, David R.

    1998-01-01

    A sensor permanently indicates that it has been exposed to temperatures exceeding a critical temperature for a predetermined time period. An element of the sensor made from shape memory alloy changes shape when exposed, even temporarily, to temperatures above the Austenitic temperature of the shape memory alloy. The shape change of the SMA element causes the sensor to change between two readily distinguishable states.

  10. Disorder-Induced Microscopic Magnetic Memory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Disorder-Induced Microscopic Magnetic Memory Disorder-Induced Microscopic Magnetic Memory Print Wednesday, 26 October 2005 00:00 The magnetic-recording industry deliberately...

  11. Memorandum Memorializing Ex Parte Communication | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Memorandum Memorializing Ex Parte Communication Memorandum Memorializing Ex Parte Communication On March 31, 2011, a call was held between the Department of Energy and...

  12. Emerging Resistive Switching Memory Technologies: Overview and...

    Office of Scientific and Technical Information (OSTI)

    Emerging Resistive Switching Memory Technologies: Overview and Current Status. Citation Details In-Document Search Title: Emerging Resistive Switching Memory Technologies: Overview ...

  13. Battelle Memorial Institute Technology Marketing Summaries -...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Battelle Memorial Institute Technology Marketing Summaries Here you'll find marketing summaries for technologies available for licensing from the Battelle Memorial Institute (BMI)....

  14. Patent: Post polymerization cure shape memory polymers | DOEpatents

    Office of Scientific and Technical Information (OSTI)

    Post polymerization cure shape memory polymers Citation Details Title: Post polymerization cure shape memory polymers

  15. Effects of Transcranial Direct Current Stimulation (tDCS) on Human Memory.

    SciTech Connect (OSTI)

    Matzen, Laura E.; Trumbo, Michael Christopher Stefan

    2014-10-01

    Training a person in a new knowledge base or skill set is extremely time consuming and costly, particularly in highly specialized domains such as the military and the intelligence community. Recent research in cognitive neuroscience has suggested that a technique called transcranial direct current stimulation (tDCS) has the potential to revolutionize training by enabling learners to acquire new skills faster, more efficiently, and more robustly (Bullard et al., 2011). In this project, we tested the effects of tDCS on two types of memory performance that are critical for learning new skills: associative memory and working memory. Associative memory is memory for the relationship between two items or events. It forms the foundation of all episodic memories, so enhancing associative memory could provide substantial benefits to the speed and robustness of learning new information. We tested the effects of tDCS on associative memory, using a real-world associative memory task: remembering the links between faces and names. Working memory refers to the amount of information that can be held in mind and processed at one time, and it forms the basis for all higher-level cognitive processing. We investigated the degree of transfer between various working memory tasks (the N-back task as a measure of verbal working memory, the rotation-span task as a measure of visuospatial working memory, and Raven's progressive matrices as a measure of fluid intelligence) in order to determine if tDCS-induced facilitation of performance is task-specific or general.

  16. Shape memory alloy thaw sensors

    DOE Patents [OSTI]

    Shahinpoor, M.; Martinez, D.R.

    1998-04-07

    A sensor permanently indicates that it has been exposed to temperatures exceeding a critical temperature for a predetermined time period. An element of the sensor made from shape memory alloy changes shape when exposed, even temporarily, to temperatures above the austenitic temperature of the shape memory alloy. The shape change of the SMA element causes the sensor to change between two readily distinguishable states. 16 figs.

  17. Earthquake 'memory' could spur aftershocks

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Earthquake 'memory' could spur aftershocks Earthquake 'memory' could spur aftershocks Los Alamos researcher and his colleagues have shown that seismic waves can induce earthquake aftershocks, often long after a quake has subsided. January 3, 2008 Los Alamos National Laboratory sits on top of a once-remote mesa in northern New Mexico with the Jemez mountains as a backdrop to research and innovation covering multi-disciplines from bioscience, sustainable energy sources, to plasma physics and new

  18. Remote direct memory access

    DOE Patents [OSTI]

    Archer, Charles J.; Blocksome, Michael A.

    2012-12-11

    Methods, parallel computers, and computer program products are disclosed for remote direct memory access. Embodiments include transmitting, from an origin DMA engine on an origin compute node to a plurality target DMA engines on target compute nodes, a request to send message, the request to send message specifying a data to be transferred from the origin DMA engine to data storage on each target compute node; receiving, by each target DMA engine on each target compute node, the request to send message; preparing, by each target DMA engine, to store data according to the data storage reference and the data length, including assigning a base storage address for the data storage reference; sending, by one or more of the target DMA engines, an acknowledgment message acknowledging that all the target DMA engines are prepared to receive a data transmission from the origin DMA engine; receiving, by the origin DMA engine, the acknowledgement message from the one or more of the target DMA engines; and transferring, by the origin DMA engine, data to data storage on each of the target compute nodes according to the data storage reference using a single direct put operation.

  19. Shape memory polymer foams for endovascular therapies

    DOE Patents [OSTI]

    Wilson, Thomas S.; Maitland, Duncan J.

    2012-03-13

    A system for occluding a physical anomaly. One embodiment comprises a shape memory material body wherein the shape memory material body fits within the physical anomaly occluding the physical anomaly. The shape memory material body has a primary shape for occluding the physical anomaly and a secondary shape for being positioned in the physical anomaly.

  20. Shape memory polymer foams for endovascular therapies

    DOE Patents [OSTI]

    Wilson, Thomas S.; Maitland, Duncan J.

    2015-05-26

    A system for occluding a physical anomaly. One embodiment comprises a shape memory material body wherein the shape memory material body fits within the physical anomaly occluding the physical anomaly. The shape memory material body has a primary shape for occluding the physical anomaly and a secondary shape for being positioned in the physical anomaly.

  1. Memory Optimization for Phase-field Simulations

    SciTech Connect (OSTI)

    Derek Gaston; John Peterson; Andrew Slaughter; Cody Permann; David Andrs

    2014-08-01

    Phase-field simulations are computationally and memory intensive applications. Many of the phase-field simulations being conducted in support of NEAMS were not capable of running on “normal clusters” with 2-4GB of RAM per core, and instead required specialized “big-memory” clusters with 64GB per core. To address this issue, the MOOSE team developed a new Python-based utility called MemoryLogger, and applied it to locate, diagnose, and eradicate memory bottlenecks within the MOOSE framework. MemoryLogger allows for a better understanding of the memory usage of an application being run in parallel across a cluster. Memory usage information is captured for every individual process in a parallel job, and communicated to the head node of the cluster. Console text output from the application itself is automatically matched with this memory usage information to produce a detailed picture of memory usage over time, making it straightforward to identify the subroutines which contribute most to the application’s peak memory usage. The information produced by the MemoryLogger quickly and effectively narrows the search for memory optimizations to the most data-intensive parts of the simulation.

  2. Configurable memory system and method for providing atomic counting operations in a memory device

    DOE Patents [OSTI]

    Bellofatto, Ralph E.; Gara, Alan G.; Giampapa, Mark E.; Ohmacht, Martin

    2010-09-14

    A memory system and method for providing atomic memory-based counter operations to operating systems and applications that make most efficient use of counter-backing memory and virtual and physical address space, while simplifying operating system memory management, and enabling the counter-backing memory to be used for purposes other than counter-backing storage when desired. The encoding and address decoding enabled by the invention provides all this functionality through a combination of software and hardware.

  3. Shape memory alloy/shape memory polymer tools

    DOE Patents [OSTI]

    Seward, Kirk P.; Krulevitch, Peter A.

    2005-03-29

    Micro-electromechanical tools for minimally invasive techniques including microsurgery. These tools utilize composite shape memory alloy (SMA), shape memory polymer (SMP) and combinations of SMA and SMP to produce catheter distal tips, actuators, etc., which are bistable. Applications for these structures include: 1) a method for reversible fine positioning of a catheter tip, 2) a method for reversible fine positioning of tools or therapeutic catheters by a guide catheter, 3) a method for bending articulation through the body's vasculature, 4) methods for controlled stent delivery, deployment, and repositioning, and 5) catheters with variable modulus, with vibration mode, with inchworm capability, and with articulated tips. These actuators and catheter tips are bistable and are opportune for in vivo usage because the materials are biocompatible and convenient for intravascular use as well as other minimal by invasive techniques.

  4. Direct memory access transfer completion notification

    DOE Patents [OSTI]

    Chen, Dong; Giampapa, Mark E.; Heidelberger, Philip; Kumar, Sameer; Parker, Jeffrey J.; Steinmacher-Burow, Burkhard D.; Vranas, Pavlos

    2010-07-27

    Methods, compute nodes, and computer program products are provided for direct memory access (`DMA`) transfer completion notification. Embodiments include determining, by an origin DMA engine on an origin compute node, whether a data descriptor for an application message to be sent to a target compute node is currently in an injection first-in-first-out (`FIFO`) buffer in dependence upon a sequence number previously associated with the data descriptor, the total number of descriptors currently in the injection FIFO buffer, and the current sequence number for the newest data descriptor stored in the injection FIFO buffer; and notifying a processor core on the origin DMA engine that the message has been sent if the data descriptor for the message is not currently in the injection FIFO buffer.

  5. Release mechanism utilizing shape memory polymer material

    DOE Patents [OSTI]

    Lee, Abraham P.; Northrup, M. Allen; Ciarlo, Dino R.; Krulevitch, Peter A.; Benett, William J.

    2000-01-01

    Microfabricated therapeutic actuators are fabricated using a shape memory polymer (SMP), a polyurethane-based material that undergoes a phase transformation at a specified temperature (Tg). At a temperature above temperature Tg material is soft and can be easily reshaped into another configuration. As the temperature is lowered below temperature Tg the new shape is fixed and locked in as long as the material stays below temperature Tg. Upon reheating the material to a temperature above Tg, the material will return to its original shape. By the use of such SMP material, SMP microtubing can be used as a release actuator for the delivery of embolic coils through catheters into aneurysms, for example. The microtubing can be manufactured in various sizes and the phase change temperature Tg is determinate for an intended temperature target and intended use.

  6. Mixed-sputter deposition of Ni-Ti-Cu shape memory films

    SciTech Connect (OSTI)

    Krulevitch, P.; Ramsey, P.B.; Makowiecki, D.M.; Lee, A.P.; Northrup, M.A.; Johnson, G.C.

    1994-05-01

    Ni-Ti-Cu shape memory films were mixed-sputter deposited from separate nickel, titanium, and copper targets, providing increased compositional flexibility. Shape memory characteristics, examined for films with 7 at. % Cu and 41--51 at. % Tl, were determined with temperature controlled substrate curvature measurements, and microstructure was studied with transmission electron microscopy. The Ni-Ti-Cu films were found to have shape memory properties comparable to bulk materials, with transformation temperatures between 20 and 62{degree}C, a 10--13{degree}C hysteresis, and up to 330 MPa recoverable stress.

  7. Nonvolatile semiconductor memory having three dimension charge confinement

    DOE Patents [OSTI]

    Dawson, L. Ralph; Osbourn, Gordon C.; Peercy, Paul S.; Weaver, Harry T.; Zipperian, Thomas E.

    1991-01-01

    A layered semiconductor device with a nonvolatile three dimensional memory comprises a storage channel which stores charge carriers. Charge carriers flow laterally through the storage channel from a source to a drain. Isolation material, either a Schottky barrier or a heterojunction, located in a trench of an upper layer controllably retains the charge within the a storage portion determined by the confining means. The charge is retained for a time determined by the isolation materials' nonvolatile characteristics or until a change of voltage on the isolation material and the source and drain permit a read operation. Flow of charge through an underlying sense channel is affected by the presence of charge within the storage channel, thus the presences of charge in the memory can be easily detected.

  8. Aggregate Remote Memory Copy Interface

    Energy Science and Technology Software Center (OSTI)

    2006-02-23

    The purpose of the Aggregate Remote Memory Copy (ARMCI) library is to provide a general- purpose, efficient, and Widely portable remote memory access (RMA) operations (one-sided communication) optimized for Contiguous and noncontiguous (strided, scatter/gather, I/O vector) data transfers. In addition, ARMCI includes a set of atomic and mutual exclusion operations. The development ARMCI is driven by the need to support the global-addres space communication model in context of distributed regular or irregular distributed data structures,more » communication libraries, and compilers. ARMCI is a standalone system that could be used to support user-level libraries and applications that use MPI or PVM.« less

  9. Shape memory polymers (Patent) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    polymers Citation Details In-Document Search Title: Shape memory polymers New shape memory polymer compositions, methods for synthesizing new shape memory polymers, and apparatus comprising an actuator and a shape memory polymer wherein the shape memory polymer comprises at least a portion of the actuator. A shape memory polymer comprising a polymer composition which physically forms a network structure wherein the polymer composition has shape-memory behavior and can be formed into a permanent

  10. Disorder-Induced Microscopic Magnetic Memory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Disorder-Induced Microscopic Magnetic Memory Print The magnetic-recording industry deliberately introduces carefully controlled disorder into its materials to obtain the desired...

  11. Sandia Cognitive Runtime Engine with Active Memory

    Energy Science and Technology Software Center (OSTI)

    2005-12-01

    The SCREAM (Sandia Cognitive Runtime Engine with Active memory) software implements a subset of a Cognitive Famework developed at Sandia National Laboratories. The software is implemented in the Umbra simulation and modular software framework, which is C++-based. SCREAM components include a Concept Instance Driver, Semantic Activation Network, Concept Database, Context Recognizer, Context Database, Episodic Memory, Egocentric Spatial Memory, Allocentric Spatial Memory, Comparator, and a Context to Abstract Action converter. At initialization, modules load the datamore » files that together specify all the components of a particular cognitive model, such as concept declarations, context declarations, spreading activation weights, and context/situation-cue-patterns.« less

  12. Improving Memory Error Handling Using Linux

    SciTech Connect (OSTI)

    Carlton, Michael Andrew [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Blanchard, Sean P. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Debardeleben, Nathan A. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2014-07-25

    As supercomputers continue to get faster and more powerful in the future, they will also have more nodes. If nothing is done, then the amount of memory in supercomputer clusters will soon grow large enough that memory failures will be unmanageable to deal with by manually replacing memory DIMMs. "Improving Memory Error Handling Using Linux" is a process oriented method to solve this problem by using the Linux kernel to disable (offline) faulty memory pages containing bad addresses, preventing them from being used again by a process. The process of offlining memory pages simplifies error handling and results in reducing both hardware and manpower costs required to run Los Alamos National Laboratory (LANL) clusters. This process will be necessary for the future of supercomputing to allow the development of exascale computers. It will not be feasible without memory error handling to manually replace the number of DIMMs that will fail daily on a machine consisting of 32-128 petabytes of memory. Testing reveals the process of offlining memory pages works and is relatively simple to use. As more and more testing is conducted, the entire process will be automated within the high-performance computing (HPC) monitoring software, Zenoss, at LANL.

  13. Exploiting Data Similarity to Reduce Memory Footprints

    SciTech Connect (OSTI)

    Biswas, S; de Supinski, B R; Schulz, M; Franklin, D; Sherwood, T; Chong, F T

    2011-01-28

    Memory size has long limited large-scale applications on high-performance computing (HPC) systems. Since compute nodes frequently do not have swap space, physical memory often limits problem sizes. Increasing core counts per chip and power density constraints, which limit the number of DIMMs per node, have exacerbated this problem. Further, DRAM constitutes a significant portion of overall HPC system cost. Therefore, instead of adding more DRAM to the nodes, mechanisms to manage memory usage more efficiently - preferably transparently - could increase effective DRAM capacity and thus the benefit of multicore nodes for HPC systems. MPI application processes often exhibit significant data similarity. These data regions occupy multiple physical locations across the individual rank processes within a multicore node and thus offer a potential savings in memory capacity. These regions, primarily residing in heap, are dynamic, which makes them difficult to manage statically. Our novel memory allocation library, SBLLmalloc, automatically identifies identical memory blocks and merges them into a single copy. SBLLmalloc does not require application or OS changes since we implement it as a user-level library. Overall, we demonstrate that SBLLmalloc reduces the memory footprint of a range of MPI applications by 32.03% on average and up to 60.87%. Further, SBLLmalloc supports problem sizes for IRS over 21.36% larger than using standard memory management techniques, thus significantly increasing effective system size. Similarly, SBLLmalloc requires 43.75% fewer nodes than standard memory management techniques to solve an AMG problem.

  14. Disorder-Induced Microscopic Magnetic Memory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    point for future theories. The Persistence of Memory Magnets are not just for refrigerator doors-they are of paramount importance in today's digital information age. In the...

  15. Generation-based memory synchronization in a multiprocessor system with weakly consistent memory accesses

    DOE Patents [OSTI]

    Ohmacht, Martin

    2014-09-09

    In a multiprocessor system, a central memory synchronization module coordinates memory synchronization requests responsive to memory access requests in flight, a generation counter, and a reclaim pointer. The central module communicates via point-to-point communication. The module includes a global OR reduce tree for each memory access requesting device, for detecting memory access requests in flight. An interface unit is implemented associated with each processor requesting synchronization. The interface unit includes multiple generation completion detectors. The generation count and reclaim pointer do not pass one another.

  16. Shape memory system with integrated actuation using embedded particles

    Office of Scientific and Technical Information (OSTI)

    (Patent) | SciTech Connect Patent: Shape memory system with integrated actuation using embedded particles Citation Details In-Document Search Title: Shape memory system with integrated actuation using embedded particles A shape memory material with integrated actuation using embedded particles. One embodiment provides a shape memory material apparatus comprising a shape memory material body and magnetic pieces in the shape memory material body. Another embodiment provides a method of

  17. Shape memory system with integrated actuation using embedded particles

    Office of Scientific and Technical Information (OSTI)

    (Patent) | SciTech Connect Patent: Shape memory system with integrated actuation using embedded particles Citation Details In-Document Search Title: Shape memory system with integrated actuation using embedded particles A shape memory material with integrated actuation using embedded particles. One embodiment provides a shape memory material apparatus comprising a shape memory material body and magnetic pieces in the shape memory material body. Another embodiment provides a method of

  18. Shape memory system with integrated actuation using embedded particles

    Office of Scientific and Technical Information (OSTI)

    (Patent) | SciTech Connect A shape memory material with integrated actuation using embedded particles. One embodiment provides a shape memory material apparatus comprising a shape memory material body and magnetic pieces in the shape memory material body. Another embodiment provides a method of actuating a device to perform an activity on a subject comprising the steps of positioning a shape memory material body in a desired position with regard to the subject, the shape memory material body

  19. Tier identification (TID) for tiered memory characteristics

    DOE Patents [OSTI]

    Chang, Jichuan; Lim, Kevin T; Ranganathan, Parthasarathy

    2014-03-25

    A tier identification (TID) is to indicate a characteristic of a memory region associated with a virtual address in a tiered memory system. A thread may be serviced according to a first path based on the TID indicating a first characteristic. The thread may be serviced according to a second path based on the TID indicating a second characteristic.

  20. Shape memory polymer actuator and catheter

    DOE Patents [OSTI]

    Maitland, Duncan J.; Lee, Abraham P.; Schumann, Daniel L.; Matthews, Dennis L.; Decker, Derek E.; Jungreis, Charles A.

    2007-11-06

    An actuator system is provided for acting upon a material in a vessel. The system includes an optical fiber and a shape memory polymer material operatively connected to the optical fiber. The shape memory polymer material is adapted to move from a first shape for moving through said vessel to a second shape where it can act upon said material.

  1. Shape memory polymer actuator and catheter

    DOE Patents [OSTI]

    Maitland, Duncan J.; Lee, Abraham P.; Schumann, Daniel L.; Matthews, Dennis L.; Decker, Derek E.; Jungreis, Charles A.

    2004-05-25

    An actuator system is provided for acting upon a material in a vessel. The system includes an optical fiber and a shape memory polymer material operatively connected to the optical fiber. The shape memory polymer material is adapted to move from a first shape for moving through said vessel to a second shape where it can act upon said material.

  2. Whirlpools on the Nanoscale Could Multiply Magnetic Memory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Whirlpools on the Nanoscale Could Multiply Magnetic Memory Whirlpools on the Nanoscale Could Multiply Magnetic Memory Print Tuesday, 21 May 2013 00:00 Research at the Advanced...

  3. Rebuilding it Better: Greensburg, Kansas, Kiowa County Memorial...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    it Better: Greensburg, Kansas, Kiowa County Memorial Hospital (Brochure) (Revised) Rebuilding it Better: Greensburg, Kansas, Kiowa County Memorial Hospital (Brochure) (Revised)...

  4. Modesto Memorial Hospital Space Heating Low Temperature Geothermal...

    Open Energy Info (EERE)

    Memorial Hospital Space Heating Low Temperature Geothermal Facility Jump to: navigation, search Name Modesto Memorial Hospital Space Heating Low Temperature Geothermal Facility...

  5. The implications of working set analysis on supercomputing memory...

    Office of Scientific and Technical Information (OSTI)

    analysis on supercomputing memory hierarchy design. Citation Details In-Document Search Title: The implications of working set analysis on supercomputing memory hierarchy design. ...

  6. V-176: Adobe Flash Player Memory Corruption Flaw Lets Remote...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6: Adobe Flash Player Memory Corruption Flaw Lets Remote Users Execute Arbitrary Code V-176: Adobe Flash Player Memory Corruption Flaw Lets Remote Users Execute Arbitrary Code June...

  7. Aging and deaging effects in shape memory alloys (Journal Article...

    Office of Scientific and Technical Information (OSTI)

    Aging and deaging effects in shape memory alloys Citation Details In-Document Search Title: Aging and deaging effects in shape memory alloys Authors: Xue, Dezhen ; Zhou, Yumei ; ...

  8. Emerging Nanoscale Memory Technologies: The Solution to Extreme...

    Office of Scientific and Technical Information (OSTI)

    Emerging Nanoscale Memory Technologies: The Solution to Extreme Scale Problems. Citation Details In-Document Search Title: Emerging Nanoscale Memory Technologies: The Solution to ...

  9. Biomedical Applications of Thermally Activated Shape Memory Polymers...

    Office of Scientific and Technical Information (OSTI)

    Biomedical Applications of Thermally Activated Shape Memory Polymers Citation Details In-Document Search Title: Biomedical Applications of Thermally Activated Shape Memory Polymers ...

  10. Similarity Engine: Using Content Similarity to Improve Memory...

    Office of Scientific and Technical Information (OSTI)

    Engine: Using Content Similarity to Improve Memory Resilience. Citation Details In-Document Search Title: Similarity Engine: Using Content Similarity to Improve Memory Resilience. ...

  11. Shape memory system with integrated actuation using embedded...

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Search Results Patent: Shape memory system with integrated actuation using embedded particles Citation Details In-Document Search Title: Shape memory system with ...

  12. Post-Polymerization Crosslinked Polyurethane Shape-Memory Polymers...

    Office of Scientific and Technical Information (OSTI)

    Post-Polymerization Crosslinked Polyurethane Shape-Memory Polymers Citation Details In-Document Search Title: Post-Polymerization Crosslinked Polyurethane Shape-Memory Polymers ...

  13. Patent: Shape memory alloy heat engines and energy harvesting systems |

    Office of Scientific and Technical Information (OSTI)

    DOEpatents Shape memory alloy heat engines and energy harvesting systems Citation Details Title: Shape memory alloy heat engines and energy harvesting systems

  14. Patent: Shape memory system with integrated actuation using embedded

    Office of Scientific and Technical Information (OSTI)

    particles | DOEpatents Shape memory system with integrated actuation using embedded particles Citation Details Title: Shape memory system with integrated actuation using embedded particles

  15. Low density biodegradable shape memory polyurethane foams for...

    Office of Scientific and Technical Information (OSTI)

    Low density biodegradable shape memory polyurethane foams for embolic biomedical applications Citation Details In-Document Search Title: Low density biodegradable shape memory...

  16. Controlling the Actuation Rate of Low Density Shape Memory Polymer...

    Office of Scientific and Technical Information (OSTI)

    Memory Polymer Foams in Water Citation Details In-Document Search Title: Controlling the Actuation Rate of Low Density Shape Memory Polymer Foams in Water Authors: Singhal, P ; ...

  17. Temperature and electrical memory of polymer fibers

    SciTech Connect (OSTI)

    Yuan, Jinkai; Zakri, Cécile; Grillard, Fabienne; Neri, Wilfrid; Poulin, Philippe

    2014-05-15

    We report in this work studies of the shape memory behavior of polymer fibers loaded with carbon nanotubes or graphene flakes. These materials exhibit enhanced shape memory properties with the generation of a giant stress upon shape recovery. In addition, they exhibit a surprising temperature memory with a peak of generated stress at a temperature nearly equal to the temperature of programming. This temperature memory is ascribed to the presence of dynamical heterogeneities and to the intrinsic broadness of the glass transition. We present recent experiments related to observables other than mechanical properties. In particular nanocomposite fibers exhibit variations of electrical conductivity with an accurate memory. Indeed, the rate of conductivity variations during temperature changes reaches a well defined maximum at a temperature equal to the temperature of programming. Such materials are promising for future actuators that couple dimensional changes with sensing electronic functionalities.

  18. Support for non-locking parallel reception of packets belonging to a single memory reception FIFO

    DOE Patents [OSTI]

    Chen, Dong; Heidelberger, Philip; Salapura, Valentina; Senger, Robert M.; Steinmacher-Burow, Burkhard; Sugawara, Yutaka

    2011-01-27

    A method and apparatus for distributed parallel messaging in a parallel computing system. A plurality of DMA engine units are configured in a multiprocessor system to operate in parallel, one DMA engine unit for transferring a current packet received at a network reception queue to a memory location in a memory FIFO (rmFIFO) region of a memory. A control unit implements logic to determine whether any prior received packet destined for that rmFIFO is still in a process of being stored in the associated memory by another DMA engine unit of the plurality, and prevent the one DMA engine unit from indicating completion of storing the current received packet in the reception memory FIFO (rmFIFO) until all prior received packets destined for that rmFIFO are completely stored by the other DMA engine units. Thus, there is provided non-locking support so that multiple packets destined for a single rmFIFO are transferred and stored in parallel to predetermined locations in a memory.

  19. Direct access inter-process shared memory

    DOE Patents [OSTI]

    Brightwell, Ronald B; Pedretti, Kevin; Hudson, Trammell B

    2013-10-22

    A technique for directly sharing physical memory between processes executing on processor cores is described. The technique includes loading a plurality of processes into the physical memory for execution on a corresponding plurality of processor cores sharing the physical memory. An address space is mapped to each of the processes by populating a first entry in a top level virtual address table for each of the processes. The address space of each of the processes is cross-mapped into each of the processes by populating one or more subsequent entries of the top level virtual address table with the first entry in the top level virtual address table from other processes.

  20. Non-volatile memory for checkpoint storage

    DOE Patents [OSTI]

    Blumrich, Matthias A.; Chen, Dong; Cipolla, Thomas M.; Coteus, Paul W.; Gara, Alan; Heidelberger, Philip; Jeanson, Mark J.; Kopcsay, Gerard V.; Ohmacht, Martin; Takken, Todd E.

    2014-07-22

    A system, method and computer program product for supporting system initiated checkpoints in high performance parallel computing systems and storing of checkpoint data to a non-volatile memory storage device. The system and method generates selective control signals to perform checkpointing of system related data in presence of messaging activity associated with a user application running at the node. The checkpointing is initiated by the system such that checkpoint data of a plurality of network nodes may be obtained even in the presence of user applications running on highly parallel computers that include ongoing user messaging activity. In one embodiment, the non-volatile memory is a pluggable flash memory card.

  1. Securing non-volatile memory regions

    DOE Patents [OSTI]

    Faraboschi, Paolo; Ranganathan, Parthasarathy; Muralimanohar, Naveen

    2013-08-20

    Methods, apparatus and articles of manufacture to secure non-volatile memory regions are disclosed. An example method disclosed herein comprises associating a first key pair and a second key pair different than the first key pair with a process, using the first key pair to secure a first region of a non-volatile memory for the process, and using the second key pair to secure a second region of the non-volatile memory for the same process, the second region being different than the first region.

  2. Crystallographic attributes of a shape-memory alloy

    SciTech Connect (OSTI)

    Bhattacharya, K.

    1999-01-01

    Shape-memory alloys are attractive for many potential applications. In an attempt to provide ideas and guidelines for the development of new shape-memory alloys, this paper reports on a series of investigations that examine the reasons in the crystallography that made (i) shape-memory alloys special amongst martensites and (ii) Nickel-Titanium special among shape-memory alloys.

  3. Enforcement Letter, Battelle Memorial Institute- May 5, 2004

    Broader source: Energy.gov [DOE]

    Issued to Battelle Memorial Institute related to Radiological Work Practices at the Pacific Northwest National Laboratory

  4. Patent: Shape memory polymer foams for endovascular therapies | DOEpatents

    Office of Scientific and Technical Information (OSTI)

    polymer foams for endovascular therapies Citation Details Title: Shape memory polymer foams for endovascular therapies

  5. Nondestructive evaluation of Ni-Ti shape memory alloy

    SciTech Connect (OSTI)

    Meir, S.; Gordon, S.; Karsh, M.; Ayers, R.; Olson, D. L.; Wiezman, A.

    2011-06-23

    The nondestructive evaluation of nickel titanium (Ni-Ti) alloys for applications such as heat treatment for biomaterials applications (dental) and welding was investigated. Ni-Ti alloys and its ternary alloys are valued for mechanical properties in addition to the shape memory effect. Two analytical approaches were perused in this work. Assessment of the microstructure of the alloy that determines the martensitic start temperature (Ms) of Ni-Ti alloy as a function of heat treatment, and secondly, an attempt to evaluate a Friction Stir Welding, which involves thermo-mechanical processing of the alloy.

  6. Administering an epoch initiated for remote memory access

    DOE Patents [OSTI]

    Blocksome, Michael A.; Miller, Douglas R.

    2013-01-01

    Methods, systems, and products are disclosed for administering an epoch initiated for remote memory access that include: initiating, by an origin application messaging module on an origin compute node, one or more data transfers to a target compute node for the epoch; initiating, by the origin application messaging module after initiating the data transfers, a closing stage for the epoch, including rejecting any new data transfers after initiating the closing stage for the epoch; determining, by the origin application messaging module, whether the data transfers have completed; and closing, by the origin application messaging module, the epoch if the data transfers have completed.

  7. Administering an epoch initiated for remote memory access

    DOE Patents [OSTI]

    Blocksome, Michael A; Miller, Douglas R

    2012-10-23

    Methods, systems, and products are disclosed for administering an epoch initiated for remote memory access that include: initiating, by an origin application messaging module on an origin compute node, one or more data transfers to a target compute node for the epoch; initiating, by the origin application messaging module after initiating the data transfers, a closing stage for the epoch, including rejecting any new data transfers after initiating the closing stage for the epoch; determining, by the origin application messaging module, whether the data transfers have completed; and closing, by the origin application messaging module, the epoch if the data transfers have completed.

  8. Administering an epoch initiated for remote memory access

    DOE Patents [OSTI]

    Blocksome, Michael A; Miller, Douglas R

    2014-03-18

    Methods, systems, and products are disclosed for administering an epoch initiated for remote memory access that include: initiating, by an origin application messaging module on an origin compute node, one or more data transfers to a target compute node for the epoch; initiating, by the origin application messaging module after initiating the data transfers, a closing stage for the epoch, including rejecting any new data transfers after initiating the closing stage for the epoch; determining, by the origin application messaging module, whether the data transfers have completed; and closing, by the origin application messaging module, the epoch if the data transfers have completed.

  9. An optical simulation of shared memory

    SciTech Connect (OSTI)

    Goldberg, L.A.; Matias, Y.; Rao, S.

    1994-06-01

    We present a work-optimal randomized algorithm for simulating a shared memory machine (PRAM) on an optical communication parallel computer (OCPC). The OCPC model is motivated by the potential of optical communication for parallel computation. The memory of an OCPC is divided into modules, one module per processor. Each memory module only services a request on a timestep if it receives exactly one memory request. Our algorithm simulates each step of an n lg lg n-processor EREW PRAM on an n-processor OCPC in O(lg lg n) expected delay. (The probability that the delay is longer than this is at most n{sup {minus}{alpha}} for any constant {alpha}). The best previous simulation, due to Valiant, required {Theta}(lg n) expected delay.

  10. Distributed trace using central performance counter memory

    DOE Patents [OSTI]

    Satterfield, David L.; Sexton, James C.

    2013-01-22

    A plurality of processing cores, are central storage unit having at least memory connected in a daisy chain manner, forming a daisy chain ring layout on an integrated chip. At least one of the plurality of processing cores places trace data on the daisy chain connection for transmitting the trace data to the central storage unit, and the central storage unit detects the trace data and stores the trace data in the memory co-located in with the central storage unit.

  11. Distributed trace using central performance counter memory

    DOE Patents [OSTI]

    Satterfield, David L; Sexton, James C

    2013-10-22

    A plurality of processing cores, are central storage unit having at least memory connected in a daisy chain manner, forming a daisy chain ring layout on an integrated chip. At least one of the plurality of processing cores places trace data on the daisy chain connection for transmitting the trace data to the central storage unit, and the central storage unit detects the trace data and stores the trace data in the memory co-located in with the central storage unit.

  12. Search for: shape memory* | DOE PAGES

    Office of Scientific and Technical Information (OSTI)

    shape memory* Find + Advanced Search Ă— Advanced Search All Fields: shape memory* Title: Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Search Authors Type: All Accepted Manuscript Published Article Publisher's Accepted Manuscript Journal Name: Subject: Identifier Numbers: Research Org: Sponsoring Org: Publication Date: to Update Date: to Sort: Relevance (highest to lowest) Publication Date (newest first) Publication Date (oldest first) Close Clear All Find Switch to Detail

  13. Search for: shape memory* | DOE PAGES

    Office of Scientific and Technical Information (OSTI)

    shape memory* Find + Advanced Search Ă— Advanced Search All Fields: shape memory* Title: Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Search Authors Type: All Accepted Manuscript Published Article Publisher's Accepted Manuscript Journal Name: Subject: Identifier Numbers: Research Org: Sponsoring Org: Publication Date: to Update Date: to Sort: Relevance (highest to lowest) Publication Date (newest first) Publication Date (oldest first) Close Clear All Find Switch to Detail

  14. Disorder-Induced Microscopic Magnetic Memory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Disorder-Induced Microscopic Magnetic Memory Disorder-Induced Microscopic Magnetic Memory Print Wednesday, 26 October 2005 00:00 The magnetic-recording industry deliberately introduces carefully controlled disorder into its materials to obtain the desired magnetic properties. But as the density of magnetic disks climbs, the size of the magnetic domains responsible for storage must decrease, posing new challenges. Beautiful theories based on random microscopic disorder have been developed over

  15. Memorial Gathering Pending for NERSC's Michael Welcome

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Memorial Gathering Pending for NERSC's Michael Welcome Memorial Gathering Pending for NERSC's Michael Welcome February 4, 2014 MWelcome.JPG Mike Welcome A celebration of life is pending for Michael Welcome, a member of NERSC's Mass Storage Group, who collapsed at work on Thursday, Jan. 30, and subsequently died. Welcome spent his entire career working for computing organizations at Lawrence Berkeley and Lawrence Livermore national laboratories. He was 56. During his 30-year career, Welcome made

  16. Search for: shape memory* | DOE PAGES

    Office of Scientific and Technical Information (OSTI)

    shape memory* Find + Advanced Search Ă— Advanced Search All Fields: shape memory* Title: Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Search Authors Type: All Accepted Manuscript Published Article Publisher's Accepted Manuscript Journal Name: Subject: Identifier Numbers: Research Org: Sponsoring Org: Publication Date: to Update Date: to Sort: Relevance (highest to lowest) Publication Date (newest first) Publication Date (oldest first) Close Clear All Find Switch to Detail

  17. Associative memory in phasing neuron networks

    SciTech Connect (OSTI)

    Nair, Niketh S; Bochove, Erik J.; Braiman, Yehuda

    2014-01-01

    We studied pattern formation in a network of coupled Hindmarsh-Rose model neurons and introduced a new model for associative memory retrieval using networks of Kuramoto oscillators. Hindmarsh-Rose Neural Networks can exhibit a rich set of collective dynamics that can be controlled by their connectivity. Specifically, we showed an instance of Hebb's rule where spiking was correlated with network topology. Based on this, we presented a simple model of associative memory in coupled phase oscillators.

  18. Working memory, situation models, and synesthesia

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Radvansky, Gabriel A.; Gibson, Bradley S.; McNerney, M. Windy

    2013-03-04

    Research on language comprehension suggests a strong relationship between working memory span measures and language comprehension. However, there is also evidence that this relationship weakens at higher levels of comprehension, such as the situation model level. The current study explored this relationship by comparing 10 grapheme–color synesthetes who have additional color experiences when they read words that begin with different letters and 48 normal controls on a number of tests of complex working memory capacity and processing at the situation model level. On all tests of working memory capacity, the synesthetes outperformed the controls. Importantly, there was no carryover benefitmore » for the synesthetes for processing at the situation model level. This reinforces the idea that although some aspects of language comprehension are related to working memory span scores, this applies less directly to situation model levels. As a result, this suggests that theories of working memory must take into account this limitation, and the working memory processes that are involved in situation model construction and processing must be derived.« less

  19. Evaluating operating system vulnerability to memory errors.

    SciTech Connect (OSTI)

    Ferreira, Kurt Brian; Bridges, Patrick G.; Pedretti, Kevin Thomas Tauke; Mueller, Frank; Fiala, David; Brightwell, Ronald Brian

    2012-05-01

    Reliability is of great concern to the scalability of extreme-scale systems. Of particular concern are soft errors in main memory, which are a leading cause of failures on current systems and are predicted to be the leading cause on future systems. While great effort has gone into designing algorithms and applications that can continue to make progress in the presence of these errors without restarting, the most critical software running on a node, the operating system (OS), is currently left relatively unprotected. OS resiliency is of particular importance because, though this software typically represents a small footprint of a compute node's physical memory, recent studies show more memory errors in this region of memory than the remainder of the system. In this paper, we investigate the soft error vulnerability of two operating systems used in current and future high-performance computing systems: Kitten, the lightweight kernel developed at Sandia National Laboratories, and CLE, a high-performance Linux-based operating system developed by Cray. For each of these platforms, we outline major structures and subsystems that are vulnerable to soft errors and describe methods that could be used to reconstruct damaged state. Our results show the Kitten lightweight operating system may be an easier target to harden against memory errors due to its smaller memory footprint, largely deterministic state, and simpler system structure.

  20. High-G testing of MEMS mechanical non-volatile memory and silicon re-entry

    Office of Scientific and Technical Information (OSTI)

    switch. (Technical Report) | SciTech Connect Technical Report: High-G testing of MEMS mechanical non-volatile memory and silicon re-entry switch. Citation Details In-Document Search Title: High-G testing of MEMS mechanical non-volatile memory and silicon re-entry switch. Two different Sandia MEMS devices have been tested in a high-g environment to determine their performance and survivability. The first test was performed using a drop-table to produce a peak acceleration load of 1792 g's

  1. Shape memory system with integrated actuation using embedded particles

    DOE Patents [OSTI]

    Buckley, Patrick R.; Maitland, Duncan J.

    2012-05-29

    A shape memory material with integrated actuation using embedded particles. One embodiment provides a shape memory material apparatus comprising a shape memory material body and magnetic pieces in the shape memory material body. Another embodiment provides a method of actuating a device to perform an activity on a subject comprising the steps of positioning a shape memory material body in a desired position with regard to the subject, the shape memory material body capable of being formed in a specific primary shape, reformed into a secondary stable shape, and controllably actuated to recover the specific primary shape; including pieces in the shape memory material body; and actuating the shape memory material body using the pieces causing the shape memory material body to be controllably actuated to recover the specific primary shape and perform the activity on the subject.

  2. Richmond County, North Carolina: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    East Rockingham, North Carolina Ellerbe, North Carolina Hamlet, North Carolina Hoffman, North Carolina Norman, North Carolina Rockingham, North Carolina Retrieved from...

  3. Estimation of stochastic volatility with long memory for index prices of FTSE Bursa Malaysia KLCI

    SciTech Connect (OSTI)

    Chen, Kho Chia; Kane, Ibrahim Lawal; Rahman, Haliza Abd; Bahar, Arifah; Ting, Chee-Ming

    2015-02-03

    In recent years, modeling in long memory properties or fractionally integrated processes in stochastic volatility has been applied in the financial time series. A time series with structural breaks can generate a strong persistence in the autocorrelation function, which is an observed behaviour of a long memory process. This paper considers the structural break of data in order to determine true long memory time series data. Unlike usual short memory models for log volatility, the fractional Ornstein-Uhlenbeck process is neither a Markovian process nor can it be easily transformed into a Markovian process. This makes the likelihood evaluation and parameter estimation for the long memory stochastic volatility (LMSV) model challenging tasks. The drift and volatility parameters of the fractional Ornstein-Unlenbeck model are estimated separately using the least square estimator (lse) and quadratic generalized variations (qgv) method respectively. Finally, the empirical distribution of unobserved volatility is estimated using the particle filtering with sequential important sampling-resampling (SIR) method. The mean square error (MSE) between the estimated and empirical volatility indicates that the performance of the model towards the index prices of FTSE Bursa Malaysia KLCI is fairly well.

  4. Memory device using movement of protons

    DOE Patents [OSTI]

    Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

    2000-01-01

    An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

  5. Ni-Mn-Ga shape memory nanoactuation

    SciTech Connect (OSTI)

    Kohl, M. Schmitt, M.; Krevet, B.; Backen, A.; Schultz, L.; Fähler, S.

    2014-01-27

    To probe finite size effects in ferromagnetic shape memory nanoactuators, double-beam structures with minimum dimensions down to 100?nm are designed, fabricated, and characterized in-situ in a scanning electron microscope with respect to their coupled thermo-elastic and electro-thermal properties. Electrical resistance and mechanical beam bending tests demonstrate a reversible thermal shape memory effect down to 100?nm. Electro-thermal actuation involves large temperature gradients along the nanobeam in the order of 100?K/?m. We discuss the influence of surface and twin boundary energies and explain why free-standing nanoactuators behave differently compared to constrained geometries like films and nanocrystalline shape memory alloys.

  6. Memory device using movement of protons

    DOE Patents [OSTI]

    Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

    1998-01-01

    An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

  7. DIODE STEERED MANGETIC-CORE MEMORY

    DOE Patents [OSTI]

    Melmed, A.S.; Shevlin, R.T.; Laupheimer, R.

    1962-09-18

    A word-arranged magnetic-core memory is designed for use in a digital computer utilizing the reverse or back current property of the semi-conductor diodes to restore the information in the memory after read-out. In order to ob tain a read-out signal from a magnetic core storage unit, it is necessary to change the states of some of the magnetic cores. In order to retain the information in the memory after read-out it is then necessary to provide a means to return the switched cores to their states before read-out. A rewrite driver passes a pulse back through each row of cores in which some switching has taken place. This pulse combines with the reverse current pulses of diodes for each column in which a core is switched during read-out to cause the particular cores to be switched back into their states prior to read-out. (AEC)

  8. Low Latency Messages on Distributed Memory Multiprocessors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Rosing, Matt; Saltz, Joel

    1995-01-01

    This article describes many of the issues in developing an efficient interface for communication on distributed memory machines. Although the hardware component of message latency is less than 1 ws on many distributed memory machines, the software latency associated with sending and receiving typed messages is on the order of 50 μs. The reason for this imbalance is that the software interface does not match the hardware. By changing the interface to match the hardware more closely, applications with fine grained communication can be put on these machines. This article describes several tests performed and many of the issues involvedmore » in supporting low latency messages on distributed memory machines.« less

  9. Memory device using movement of protons

    DOE Patents [OSTI]

    Warren, W.L.; Vanheusden, K.J.R.; Fleetwood, D.M.; Devine, R.A.B.

    1998-11-03

    An electrically written memory element is disclosed utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element. 19 figs.

  10. Shape memory and pseudoelasticity in metal nanowires.

    SciTech Connect (OSTI)

    Zimmerman, Jonathan A.; Park, Harold S.; Gall, Ken

    2005-07-01

    Structural reorientations in metallic fcc nanowires are controlled by a combination of size, thermal energy, and the type of defects formed during inelastic deformation. By utilizing atomistic simulations, we show that certain fcc nanowires can exhibit both shape memory and pseudoelastic behavior. We also show that the formation of defect-free twins, a process related to the material stacking fault energy, nanometer size scale, and surface stresses is the mechanism that controls the ability of fcc nanowires of different materials to show a reversible transition between two crystal orientations during loading and thus shape memory and pseudoelasticity.

  11. Paging memory from random access memory to backing storage in a parallel computer

    DOE Patents [OSTI]

    Archer, Charles J; Blocksome, Michael A; Inglett, Todd A; Ratterman, Joseph D; Smith, Brian E

    2013-05-21

    Paging memory from random access memory (`RAM`) to backing storage in a parallel computer that includes a plurality of compute nodes, including: executing a data processing application on a virtual machine operating system in a virtual machine on a first compute node; providing, by a second compute node, backing storage for the contents of RAM on the first compute node; and swapping, by the virtual machine operating system in the virtual machine on the first compute node, a page of memory from RAM on the first compute node to the backing storage on the second compute node.

  12. Controlling the Actuation Rate of Low Density Shape Memory Polymer...

    Office of Scientific and Technical Information (OSTI)

    of Low Density Shape Memory Polymer Foams in Water Citation Details In-Document Search Title: Controlling the Actuation Rate of Low Density Shape Memory Polymer Foams in Water ...

  13. Method for refreshing a non-volatile memory

    DOE Patents [OSTI]

    Riekels, James E.; Schlesinger, Samuel

    2008-11-04

    A non-volatile memory and a method of refreshing a memory are described. The method includes allowing an external system to control refreshing operations within the memory. The memory may generate a refresh request signal and transmit the refresh request signal to the external system. When the external system finds an available time to process the refresh request, the external system acknowledges the refresh request and transmits a refresh acknowledge signal to the memory. The memory may also comprise a page register for reading and rewriting a data state back to the memory. The page register may comprise latches in lieu of supplemental non-volatile storage elements, thereby conserving real estate within the memory.

  14. Controlling the Actuation Rate of Low Density Shape Memory Polymer...

    Office of Scientific and Technical Information (OSTI)

    Memory Polymer Foams in Water Citation Details In-Document Search Title: Controlling the Actuation Rate of Low Density Shape Memory Polymer Foams in Water You are accessing a ...

  15. Oppenheimer Memorial Lecture - Inflationary Cosmology: Is Our Universe Part

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of a Multiverse? Oppenheimer Memorial Lecture Oppenheimer Memorial Lecture - Inflationary Cosmology: Is Our Universe Part of a Multiverse? WHEN: Jul 27, 2015 7:30 PM - 9:00 PM WHERE: Duane Smith Auditorium, Los Alamos High School SPEAKER: Alan Guth, Massachusetts Institute of Technology CATEGORY: Community TYPE: Lecture INTERNAL: Calendar Login Event Description Guth will deliver the 45th J. Robert Oppenheimer Memorial Lecture. The J. Robert Oppenheimer Memorial Committee sponsors the annual

  16. Temperature and electrical memory of polymer fibers (Journal...

    Office of Scientific and Technical Information (OSTI)

    Temperature and electrical memory of polymer fibers Citation Details In-Document Search ... ACTUATORS; CARBON NANOTUBES; COMPOSITE MATERIALS; ELECTRIC CONDUCTIVITY; ...

  17. Rebuilding it Better: Greensburg, Kansas, Kiowa County Memorial Hospital

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    (Brochure) (Revised) | Department of Energy it Better: Greensburg, Kansas, Kiowa County Memorial Hospital (Brochure) (Revised) Rebuilding it Better: Greensburg, Kansas, Kiowa County Memorial Hospital (Brochure) (Revised) This brochure details the sustainable and green aspects of the LEED Platinum-designed Kiowa County Memorial Hospital in Greensburg, Kansas. PDF icon 47461.pdf More Documents & Publications Rebuilding it Better: Greensburg, Kansas, Kiowa County Memorial Hospital

  18. Conduction Along Magnetic Interfaces Could Improve Memory Devices

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Conduction Along Magnetic Interfaces Could Improve Memory Devices Conduction Along Magnetic Interfaces Could Improve Memory Devices Print Thursday, 04 February 2016 15:54 Researchers all over the globe have been working hard on new memory storage devices that are faster, more stable, and can be made smaller than flash memory, which is approaching its fundamental limit on size, largely set by semiconductor physics. An international team of researchers has provided the first evidence that this

  19. Comments by Battelle Memorial Institute to DOE Rulemaking | Department of

    Office of Environmental Management (EM)

    Energy by Battelle Memorial Institute to DOE Rulemaking Comments by Battelle Memorial Institute to DOE Rulemaking Comments by Battelle Memorial Institute in response to DOE' s July 27, 2010 Notice of Inquiry and Request for Comment (Notice) regarding implementation of Section 934 of the Energy Independence and Security Act of 2007 (Act). PDF icon Comments by Battelle Memorial Institute to DOE Rulemaking More Documents & Publications Exelon response CSC_Extension.PDF Memorandum

  20. An implementation of SISAL for distributed-memory architectures

    SciTech Connect (OSTI)

    Beard, P.C.

    1995-06-01

    This thesis describes a new implementation of the implicitly parallel functional programming language SISAL, for massively parallel processor supercomputers. The Optimizing SISAL Compiler (OSC), developed at Lawrence Livermore National Laboratory, was originally designed for shared-memory multiprocessor machines and has been adapted to distributed-memory architectures. OSC has been relatively portable between shared-memory architectures, because they are architecturally similar, and OSC generates portable C code. However, distributed-memory architectures are not standardized -- each has a different programming model. Distributed-memory SISAL depends on a layer of software that provides a portable, distributed, shared-memory abstraction. This layer is provided by Split-C, a dialect of the C programming language developed at U.C. Berkeley, which has demonstrated good performance on distributed-memory architectures. Split-C provides important capabilities for good performance: support for program-specific distributed data structures, and split-phase memory operations. Distributed data structures help achieve good memory locality, while split-phase memory operations help tolerate the longer communication latencies inherent in distributed-memory architectures. The distributed-memory SISAL compiler and run-time system takes advantage of these capabilities. The results of these efforts is a compiler that runs identically on the Thinking Machines Connection Machine (CM-5), and the Meiko Computing Surface (CS-2).

  1. Direct match data flow memory for data driven computing

    DOE Patents [OSTI]

    Davidson, G.S.; Grafe, V.G.

    1997-10-07

    A data flow computer and method of computing is disclosed which utilizes a data driven processor node architecture. The apparatus in a preferred embodiment includes a plurality of First-In-First-Out (FIFO) registers, a plurality of related data flow memories, and a processor. The processor makes the necessary calculations and includes a control unit to generate signals to enable the appropriate FIFO register receiving the result. In a particular embodiment, there are three FIFO registers per node: an input FIFO register to receive input information form an outside source and provide it to the data flow memories; an output FIFO register to provide output information from the processor to an outside recipient; and an internal FIFO register to provide information from the processor back to the data flow memories. The data flow memories are comprised of four commonly addressed memories. A parameter memory holds the A and B parameters used in the calculations; an opcode memory holds the instruction; a target memory holds the output address; and a tag memory contains status bits for each parameter. One status bit indicates whether the corresponding parameter is in the parameter memory and one status bit to indicate whether the stored information in the corresponding data parameter is to be reused. The tag memory outputs a ``fire`` signal (signal R VALID) when all of the necessary information has been stored in the data flow memories, and thus when the instruction is ready to be fired to the processor. 11 figs.

  2. Direct match data flow memory for data driven computing

    DOE Patents [OSTI]

    Davidson, George S.; Grafe, Victor Gerald

    1997-01-01

    A data flow computer and method of computing is disclosed which utilizes a data driven processor node architecture. The apparatus in a preferred embodiment includes a plurality of First-In-First-Out (FIFO) registers, a plurality of related data flow memories, and a processor. The processor makes the necessary calculations and includes a control unit to generate signals to enable the appropriate FIFO register receiving the result. In a particular embodiment, there are three FIFO registers per node: an input FIFO register to receive input information form an outside source and provide it to the data flow memories; an output FIFO register to provide output information from the processor to an outside recipient; and an internal FIFO register to provide information from the processor back to the data flow memories. The data flow memories are comprised of four commonly addressed memories. A parameter memory holds the A and B parameters used in the calculations; an opcode memory holds the instruction; a target memory holds the output address; and a tag memory contains status bits for each parameter. One status bit indicates whether the corresponding parameter is in the parameter memory and one status bit to indicate whether the stored information in the corresponding data parameter is to be reused. The tag memory outputs a "fire" signal (signal R VALID) when all of the necessary information has been stored in the data flow memories, and thus when the instruction is ready to be fired to the processor.

  3. Guide wire extension for shape memory polymer occlusion removal devices

    DOE Patents [OSTI]

    Maitland, Duncan J.; Small, IV, Ward; Hartman, Jonathan

    2009-11-03

    A flexible extension for a shape memory polymer occlusion removal device. A shape memory polymer instrument is transported through a vessel via a catheter. A flexible elongated unit is operatively connected to the distal end of the shape memory polymer instrument to enhance maneuverability through tortuous paths en route to the occlusion.

  4. DOE - Office of Legacy Management -- Battelle Memorial Institute Battelle

    Office of Legacy Management (LM)

    Columbus Labs - OH 01 Memorial Institute Battelle Columbus Labs - OH 01 FUSRAP Considered Sites Site: Battelle Memorial Institute Battelle Columbus Labs (OH.01 ) Designated Name: Alternate Name: Location: Evaluation Year: Site Operations: Site Disposition: Radioactive Materials Handled: Primary Radioactive Materials Handled: Radiological Survey(s): Site Status: Also see Documents Related to Battelle Memorial Institute Battelle Columbus Labs

  5. A study of the viability of exploiting memory content similarity to improve resilience to memory errors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Levy, Scott; Ferreira, Kurt B.; Bridges, Patrick G.; Thompson, Aidan P.; Trott, Christian

    2014-12-09

    Building the next-generation of extreme-scale distributed systems will require overcoming several challenges related to system resilience. As the number of processors in these systems grow, the failure rate increases proportionally. One of the most common sources of failure in large-scale systems is memory. In this paper, we propose a novel runtime for transparently exploiting memory content similarity to improve system resilience by reducing the rate at which memory errors lead to node failure. We evaluate the viability of this approach by examining memory snapshots collected from eight high-performance computing (HPC) applications and two important HPC operating systems. Based on themore » characteristics of the similarity uncovered, we conclude that our proposed approach shows promise for addressing system resilience in large-scale systems.« less

  6. A study of the viability of exploiting memory content similarity to improve resilience to memory errors

    SciTech Connect (OSTI)

    Levy, Scott; Ferreira, Kurt B.; Bridges, Patrick G.; Thompson, Aidan P.; Trott, Christian

    2014-12-09

    Building the next-generation of extreme-scale distributed systems will require overcoming several challenges related to system resilience. As the number of processors in these systems grow, the failure rate increases proportionally. One of the most common sources of failure in large-scale systems is memory. In this paper, we propose a novel runtime for transparently exploiting memory content similarity to improve system resilience by reducing the rate at which memory errors lead to node failure. We evaluate the viability of this approach by examining memory snapshots collected from eight high-performance computing (HPC) applications and two important HPC operating systems. Based on the characteristics of the similarity uncovered, we conclude that our proposed approach shows promise for addressing system resilience in large-scale systems.

  7. Strategic priming with multiple antigens can yield memory cell phenotypes optimized for infection with Mycobacterium tuberculosis: A computational study

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ziraldo, Cordelia; Gong, Chang; Kirschner, Denise E.; Linderman, Jennifer J.

    2016-01-06

    Lack of an effective vaccine results in 9 million new cases of tuberculosis (TB) every year and 1.8 million deaths worldwide. While many infants are vaccinated at birth with BCG (an attenuated M. bovis), this does not prevent infection or development of TB after childhood. Immune responses necessary for prevention of infection or disease are still unknown, making development of effective vaccines against TB challenging. Several new vaccines are ready for human clinical trials, but these trials are difficult and expensive; especially challenging is determining the appropriate cellular response necessary for protection. The magnitude of an immune response is likelymore » key to generating a successful vaccine. Characteristics such as numbers of central memory (CM) and effector memory (EM) T cells responsive to a diverse set of epitopes are also correlated with protection. Promising vaccines against TB contain mycobacterial subunit antigens (Ag) present during both active and latent infection. We hypothesize that protection against different key immunodominant antigens could require a vaccine that produces different levels of EM and CM for each Ag-specific memory population. We created a computational model to explore EM and CM values, and their ratio, within what we term Memory Design Space. Our model captures events involved in T cell priming within lymph nodes and tracks their circulation through blood to peripheral tissues. We used the model to test whether multiple Ag-specific memory cell populations could be generated with distinct locations within Memory Design Space at a specific time point post vaccination. Boosting can further shift memory populations to memory cell ratios unreachable by initial priming events. By strategically varying antigen load, properties of cellular interactions within the LN, and delivery parameters (e.g., number of boosts) of multi-subunit vaccines, we can generate multiple Ag-specific memory populations that cover a wide range of Memory Design Space. As a result, given a set of desired characteristics for Ag-specific memory populations, we can use our model as a tool to predict vaccine formulations that will generate those populations.« less

  8. Static critical phenomena in Co-Ni-Ga ferromagnetic shape memory alloy

    SciTech Connect (OSTI)

    Sethi, Brahmananda Sarma, S. Srinivasan, A. Santra, S. B.

    2014-04-24

    Ferromagnetic shape memory alloys are smart materials because they exhibit temperature driven shape memory effect and magnetic field induced strain. Thus two types of energy, i.e. thermal and magnetic, are used to control their shape memory behaviour. Study of critical phenomenon in such materials has received increased experimental and theoretical attention for better understanding of the magnetic phase transition behavior as well as further development of ferromagnetic shape memory materials. In the present study we report the preparation and characterization of bulk Co{sub 45}Ni{sub 25}Ga{sub 30} alloy, prepared by a sequence of arc melting technique followed by homogenization at 1150 °C for 24 hours and ice-water quenching. Structural and magnetic properties of the alloys were studied by means of X-ray diffraction and vibrating sample magnetometer in an applied field range of ±18 kOe equipped with a high temperature oven. We have determined the critical temperature T{sub C} (?375.5 K) and the critical exponents viz; ?=0.40, ?=1.68 and ?=5.2. Asymptotic critical exponents ?, ?, and ? obey Widom scaling relation, ?+?=??, and the magnetization data satisfy the scaling equation of state for second-order phase transition in the asymptotic critical region.

  9. Memory in Nonlinear Ionization of Transparent Solids

    SciTech Connect (OSTI)

    Rajeev, P. P.; Simova, E.; Hnatovsky, C.; Taylor, R. S.; Rayner, D. M.; Corkum, P. B.; Gertsvolf, M.; Bhardwaj, V. R.

    2006-12-22

    We demonstrate a shot-to-shot reduction in the threshold laser intensity for ionization of bulk glasses illuminated by intense femtosecond pulses. For SiO{sub 2} the threshold change serves as positive feedback reenforcing the process that produced it. This constitutes a memory in nonlinear ionization of the material. The threshold change saturates with the number of pulses incident at a given spot. Irrespective of the pulse energy, the magnitude of the saturated threshold change is constant ({approx}20%). However, the number of shots required to reach saturation does depend on the pulse energy. Recognition of a memory in ionization is vital to understand multishot optical or electrical breakdown phenomena in dielectrics.

  10. Disorder-Induced Microscopic Magnetic Memory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Disorder-Induced Microscopic Magnetic Memory Print The magnetic-recording industry deliberately introduces carefully controlled disorder into its materials to obtain the desired magnetic properties. But as the density of magnetic disks climbs, the size of the magnetic domains responsible for storage must decrease, posing new challenges. Beautiful theories based on random microscopic disorder have been developed over the past ten years. To directly compare these theories with precise experiments,

  11. Disorder-Induced Microscopic Magnetic Memory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Disorder-Induced Microscopic Magnetic Memory Print The magnetic-recording industry deliberately introduces carefully controlled disorder into its materials to obtain the desired magnetic properties. But as the density of magnetic disks climbs, the size of the magnetic domains responsible for storage must decrease, posing new challenges. Beautiful theories based on random microscopic disorder have been developed over the past ten years. To directly compare these theories with precise experiments,

  12. Disorder-Induced Microscopic Magnetic Memory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Disorder-Induced Microscopic Magnetic Memory Print The magnetic-recording industry deliberately introduces carefully controlled disorder into its materials to obtain the desired magnetic properties. But as the density of magnetic disks climbs, the size of the magnetic domains responsible for storage must decrease, posing new challenges. Beautiful theories based on random microscopic disorder have been developed over the past ten years. To directly compare these theories with precise experiments,

  13. Disorder-Induced Microscopic Magnetic Memory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Disorder-Induced Microscopic Magnetic Memory Print The magnetic-recording industry deliberately introduces carefully controlled disorder into its materials to obtain the desired magnetic properties. But as the density of magnetic disks climbs, the size of the magnetic domains responsible for storage must decrease, posing new challenges. Beautiful theories based on random microscopic disorder have been developed over the past ten years. To directly compare these theories with precise experiments,

  14. Disorder-Induced Microscopic Magnetic Memory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Disorder-Induced Microscopic Magnetic Memory Print The magnetic-recording industry deliberately introduces carefully controlled disorder into its materials to obtain the desired magnetic properties. But as the density of magnetic disks climbs, the size of the magnetic domains responsible for storage must decrease, posing new challenges. Beautiful theories based on random microscopic disorder have been developed over the past ten years. To directly compare these theories with precise experiments,

  15. Memorial Day Message | National Nuclear Security Administration

    National Nuclear Security Administration (NNSA)

    Memorial Day Message | National Nuclear Security Administration Facebook Twitter Youtube Flickr RSS People Mission Managing the Stockpile Preventing Proliferation Powering the Nuclear Navy Emergency Response Recapitalizing Our Infrastructure Countering Nuclear Terrorism About Our Programs Our History Who We Are Our Leadership Our Locations Budget Our Operations Library Bios Congressional Testimony Fact Sheets Newsletters Press Releases Photo Gallery Jobs Apply for Our Jobs Our Jobs Working at

  16. Shape Memory Polymer Therapeutic Devices for Stroke

    SciTech Connect (OSTI)

    Wilson, T S; Small IV, W; Benett, W J; Bearinger, J P; Maitland, D J

    2005-10-11

    Shape memory polymers (SMPs) are attracting a great deal of interest in the scientific community for their use in applications ranging from light weight structures in space to micro-actuators in MEMS devices. These relatively new materials can be formed into a primary shape, reformed into a stable secondary shape, and then controllably actuated to recover their primary shape. The first part of this presentation will be a brief review of the types of polymeric structures which give rise to shape memory behavior in the context of new shape memory polymers with highly regular network structures recently developed at LLNL for biomedical devices. These new urethane SMPs have improved optical and physical properties relative to commercial SMPs, including improved clarity, high actuation force, and sharper actuation transition. In the second part of the presentation we discuss the development of SMP based devices for mechanically removing neurovascular occlusions which result in ischemic stroke. These devices are delivered to the site of the occlusion in compressed form, are pushed through the occlusion, actuated (usually optically) to take on an expanded conformation, and then used to dislodge and grip the thrombus while it is withdrawn through the catheter.

  17. Thermomechanical indentation of shape memory polymers.

    SciTech Connect (OSTI)

    Long, Kevin N.; Nguyen, Thao D.; Castro, Francisco; Qi, H. Jerry; Dunn, Martin L.; Shandas, Robin

    2007-04-01

    Shape memory polymers (SMPs) are receiving increasing attention because of their ability to store a temporary shape for a prescribed period of time, and then when subjected to an environmental stimulus, recover an original programmed shape. They are attractive candidates for a wide range of applications in microsystems, biomedical devices, deployable aerospace structures, and morphing structures. In this paper we investigate the thermomechanical behavior of shape memory polymers due to instrumented indentation, a loading/deformation scenario that represents complex multiaxial deformation. The SMP sample is indented using a spherical indenter at a temperature T{sub 1} (>T{sub g}). The temperature is then lowered to T{sub 2} (memory is then activated by increasing the temperature to T{sub 1} (>T{sub g}) during free recovery the indentation impression disappears and the surface of the SMP recovers to its original profile. A recently-developed three-dimensional finite deformation constitutive model for the thermomechanical behavior of SMPs is then used with the finite element method to simulate this process. Measurement and simulation results are compared for cases of free and constrained recovery and good agreement is obtained, suggesting the appropriateness of the simulation approach for complex multiaxial loading/deformations that are likely to occur in applications.

  18. Texture memory and strain-texture mapping in a NiTi shape memory alloy

    SciTech Connect (OSTI)

    Ye, B.; Majumdar, B. S.; Dutta, I.

    2007-08-06

    The authors report on the near-reversible strain hysteresis during thermal cycling of a polycrystalline NiTi shape memory alloy at a constant stress that is below the yield strength of the martensite. In situ neutron diffraction experiments are used to demonstrate that the strain hysteresis occurs due to a texture memory effect, where the martensite develops a texture when it is cooled under load from the austenite phase and is thereafter ''remembered.'' Further, the authors quantitatively relate the texture to the strain by developing a calculated strain-texture map or pole figure for the martensite phase, and indicate its applicability in other martensitic transformations.

  19. A prototype functional language implementation for hierarchical-memory architectures

    SciTech Connect (OSTI)

    Wolski, R.; Feo, J.; Cann, D.

    1991-06-05

    The first implementation of Sisal was designed for general shared-memory architectures. Since then, we have optimized the system for vector and coherent-cache multiprocessors. Coherent-cache systems can be thought of as simple, two-level hierarchical memory systems, where the memory hierarchy is managed by the hardware. The compiler and run-time system for such an architecture needs to maintain data locality so that the processor caches are used as much as possible. In this paper, we extend the coherent-cache implementation to include explicit compiler and run-time control for medium-grain and coarse-grain hierarchical-memory architectures. We implemented the extended system on the BBN Butterfly using interleaved shared memory exclusively for the purposes of data sharing and exploiting the per-processor local memories. We give preliminary performance results for this extended system. 10 refs., 7 figs.

  20. Near-field NanoThermoMechanical memory

    SciTech Connect (OSTI)

    Elzouka, Mahmoud; Ndao, Sidy

    2014-12-15

    In this letter, we introduce the concept of NanoThermoMechanical Memory. Unlike electronic memory, a NanoThermoMechanical memory device uses heat instead of electricity to record, store, and recover data. Memory function is achieved through the coupling of near-field thermal radiation and thermal expansion resulting in negative differential thermal resistance and thermal latching. Here, we demonstrate theoretically via numerical modeling the concept of near-field thermal radiation enabled negative differential thermal resistance that achieves bistable states. Design and implementation of a practical silicon based NanoThermoMechanical memory device are proposed along with a study of its dynamic response under write/read cycles. With more than 50% of the world's energy losses being in the form of heat along with the ever increasing need to develop computer technologies which can operate in harsh environments (e.g., very high temperatures), NanoThermoMechanical memory and logic devices may hold the answer.

  1. Whirlpools on the Nanoscale Could Multiply Magnetic Memory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Whirlpools on the Nanoscale Could Multiply Magnetic Memory Whirlpools on the Nanoscale Could Multiply Magnetic Memory Print Tuesday, 21 May 2013 00:00 Research at the Advanced Light Source may lead to four-bit magnetic cells housed on nanoscale metal disks, instead of the two-bit magnetic domains of standard magnetic memories. In magnetic vortices, parallel electron spins point either clockwise or counterclockwise, while in their crowded centers the spins point either down or up. "From the

  2. Deformation and Failure Mechanisms of Shape Memory Alloys (Technical

    Office of Scientific and Technical Information (OSTI)

    Report) | SciTech Connect SciTech Connect Search Results Technical Report: Deformation and Failure Mechanisms of Shape Memory Alloys Citation Details In-Document Search Title: Deformation and Failure Mechanisms of Shape Memory Alloys The goal of this research was to understand the fundamental mechanics that drive the deformation and failure of shape memory alloys (SMAs). SMAs are difficult materials to characterize because of the complex phase transformations that give rise to their unique

  3. Biomedical Applications of Thermally Activated Shape Memory Polymers

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Biomedical Applications of Thermally Activated Shape Memory Polymers Citation Details In-Document Search Title: Biomedical Applications of Thermally Activated Shape Memory Polymers Shape memory polymers (SMPs) are smart materials that can remember a primary shape and can return to this primary shape from a deformed secondary shape when given an appropriate stimulus. This property allows them to be delivered in a compact form via minimally invasive

  4. DOE Cites Battelle Memorial Institute for Price-Anderson Violations |

    Energy Savers [EERE]

    Department of Energy Memorial Institute for Price-Anderson Violations DOE Cites Battelle Memorial Institute for Price-Anderson Violations January 3, 2008 - 5:04pm Addthis WASHINGTON, DC - The Department of Energy (DOE) today issued a Preliminary Notice of Violation (PNOV) to the Battelle Memorial Institute (Battelle) for nuclear safety violations at the Pacific Northwest National Laboratory (PNNL). Battelle is the managing and operating contractor for PNNL in Richland, Washington. The PNOV

  5. Spin-Hall-assisted magnetic random access memory (Journal Article) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Spin-Hall-assisted magnetic random access memory Citation Details In-Document Search Title: Spin-Hall-assisted magnetic random access memory We propose a write scheme for perpendicular spin-transfer torque magnetoresistive random-access memory that significantly reduces the required tunnel current density and write energy. A sub-nanosecond in-plane polarized spin current pulse is generated using the spin-Hall effect, disturbing the stable magnetic state. Subsequent switching

  6. AHRI and NATE Memorandum Memorializing Ex Parte Communication | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Energy and NATE Memorandum Memorializing Ex Parte Communication AHRI and NATE Memorandum Memorializing Ex Parte Communication On July 31, 2012, representatives of the Air-Conditioning, Heating, and Refrigeration Institute (AHRI) and the North American Technicians Excellence (NATE) met with Department of Energy (DOE) staff to discuss the Guidelines for Home Energy Professionals: PDF icon Ex Parte Memo 07312012.pdf More Documents & Publications Memorandum Memorializing Ex Parte

  7. Shape memory system with integrated actuation using embedded...

    Office of Scientific and Technical Information (OSTI)

    pieces causing the shape memory material body to be controllably actuated to recover the ... Sponsoring Org: USDOE Country of Publication: United States Language: English Word Cloud ...

  8. Strategic priming with multiple antigens can yield memory cell...

    Office of Scientific and Technical Information (OSTI)

    Several new vaccines are ready for human clinical trials, but these trials are ... ratio, within what we term Memory Design Space. Our model captures events involvedmore in T ...

  9. Detecting and correcting hard errors in a memory array

    DOE Patents [OSTI]

    Kalamatianos, John; John, Johnsy Kanjirapallil; Gelinas, Robert; Sridharan, Vilas K.; Nevius, Phillip E.

    2015-11-19

    Hard errors in the memory array can be detected and corrected in real-time using reusable entries in an error status buffer. Data may be rewritten to a portion of a memory array and a register in response to a first error in data read from the portion of the memory array. The rewritten data may then be written from the register to an entry of an error status buffer in response to the rewritten data read from the register differing from the rewritten data read from the portion of the memory array.

  10. Recommendation 196: Alternatives to Memorialize the K-25 Building

    Broader source: Energy.gov [DOE]

    The ORSSAB Recommends to DOE Alternatives to Memorialize the K-25 Building at East Tennessee Technology Park and Manhattan Project Exhibits in Oak Ridge, Tennessee.

  11. Enforcement Letter, Battelle Memorial Institute- May 20, 2010

    Broader source: Energy.gov [DOE]

    Issued to Battelle Memorial Institute related to an Unintentional Firearm Discharge at the Volpentest HAMMER Training and Education Center at the Hanford Site

  12. Building Green in Greensburg: Kiowa County Memorial Hospital

    Broader source: Energy.gov [DOE]

    This poster highlights energy efficiency, renewable energy, and sustainable features of the high-performing Kiowa County Memorial Hospital building in Greensburg, Kansas.

  13. A Study of the Viability of Exploiting Memory Content Similarity...

    Office of Scientific and Technical Information (OSTI)

    Similarity to Improve Resilience to Memory Errors. Abstract not provided. Authors: Levy, Scott N. ; Ferreira, Kurt Brian ; Thompson, Aidan Patrick ; Trott, Christian Robert ;...

  14. T-627: Adobe Flash Player Memory Corruption | Department of Energy

    Energy Savers [EERE]

    27: Adobe Flash Player Memory Corruption T-627: Adobe Flash Player Memory Corruption May 20, 2011 - 2:50pm Addthis PROBLEM: Adobe Flash Player Memory Corruption, Denial Of Service, Execute Code PLATFORM: Windows, Mac OS X, Linux, and Solaris ABSTRACT: Adobe Flash Player before 10.3.181.14 on Windows, Mac OS X, Linux, and Solaris and before 10.3.185.21 on Android allows remote attackers to execute arbitrary code or cause a denial of service (memory corruption) via crafted Flash content, as

  15. Miniscule Mirrored Cavities Connect Quantum Memories | U.S. DOE...

    Office of Science (SC) Website

    Miniscule Mirrored Cavities Connect Quantum Memories Basic Energy Sciences (BES) BES Home ... Diamond optical cavities allow laser light (green arrow) to excite electrons on atoms held ...

  16. Saving Energy This Memorial Day | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    This Memorial Day Saving Energy This Memorial Day May 19, 2014 - 4:07pm Addthis Be energy efficient while you spend time outside this Memorial Day. | Photo courtesy of ©iStockphoto.com/DigiStu Be energy efficient while you spend time outside this Memorial Day. | Photo courtesy of ©iStockphoto.com/DigiStu Erik Hyrkas Erik Hyrkas Media Relations Specialist, Office of Energy Efficiency & Renewable Energy What does this mean for me? There are plenty of ways to save energy while having fun

  17. Nickel porphyrins for memory optical applications

    DOE Patents [OSTI]

    Shelnutt, John A.; Jia, Songling; Medforth, Craig; Holten, Dewey; Nelson, Nora Y.; Smith, Kevin M.

    2000-01-01

    The present invention relates to a nickel-porphyrin derivative in a matrix, the nickel-porphyrin derivative comprising at least two conformational isomers, a lower-energy-state conformer and a higher-energy-state conformer, such that when the higher-energy-state conformer is generated from the lower-energy-state conformer following absorption of a photon of suitable energy, the time to return to the lower-energy-state conformer is greater than 40 nanoseconds at approximately room temperature. The nickel-porphyrin derivative is useful in optical memory applications.

  18. Search for: shape memory* | DOE PAGES

    Office of Scientific and Technical Information (OSTI)

    Switch to Detail View for this search DOE PAGES Search Results Page 1 of 9 Search for: shape memory* Sort by Relevance Sort by Date (newest first) Sort by Date (oldest first) Sort by Relevance « Prev Select page number Go to page: 1 of 9 1 » Next » Total Results85 Pub. Available Full TextPublicly Available Full Text69 Citation Only16 Filtered Results Filter Results Filter by Author Ballard, Grey Malone (2) Cui, Lishan (2) Demmel, James (2) Haah, Jeongwan (2) Hao, Shijie (2) Jiang, Daqiang (2)

  19. Final Technical Report: Nanostructured Shape Memory ALloys

    SciTech Connect (OSTI)

    Wendy Crone; Walter Drugan; Arthur Ellis; John Perepezko

    2005-07-28

    With this grant we explored the properties that result from combining the effects of nanostructuring and shape memory using both experimental and theoretical approaches. We developed new methods to make nanostructured NiTi by melt-spinning and cold rolling fabrication strategies, which elicited significantly different behavior. A template synthesis method was also used to created nanoparticles. In order to characterize the particles we created, we developed a new magnetically-assisted particle manipulation technique to manipulate and position nanoscale samples for testing. Beyond characterization, this technique has broader implications for assembly of nanoscale devices and we demonstrated promising applications for optical switching through magnetically-controlled scattering and polarization capabilities. Nanoparticles of nickel-titanium (NiTi) shape memory alloy were also produced using thin film deposition technology and nanosphere lithography. Our work revealed the first direct evidence that the thermally-induced martensitic transformation of these films allows for partial indent recovery on the nanoscale. In addition to thoroughly characterizing and modeling the nanoindentation behavior in NiTi thin films, we demonstrated the feasibility of using nanoindentation on an SMA film for write-read-erase schemes for data storage.

  20. Memorandum Memorializing Ex Parte Communication | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    summary of ex parte comunication on Notice of Inquiry regarding section 934 of the Energy Independence and Security Act of 2007 PDF icon Memorandum Memorializing Ex Parte Communication More Documents & Publications Exelon response Memorandum Memorializing Ex Parte Communication CSC Workshop Transcript 02-20-2105

  1. Fluorogel elastomers with tunable transparency, elasticity, shape-memory,

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and antifouling properties (Journal Article) | DOE PAGES Accepted Manuscript: Fluorogel elastomers with tunable transparency, elasticity, shape-memory, and antifouling properties Title: Fluorogel elastomers with tunable transparency, elasticity, shape-memory, and antifouling properties In this study, omniphobic fluorogel elastomers were prepared by photocuring perfluorinated acrylates and a perfluoropolyether crosslinker. By tuning either the chemical composition or the temperature that

  2. Method for making field-structured memory materials

    DOE Patents [OSTI]

    Martin, James E.; Anderson, Robert A.; Tigges, Chris P.

    2002-01-01

    A method of forming a dual-level memory material using field structured materials. The field structured materials are formed from a dispersion of ferromagnetic particles in a polymerizable liquid medium, such as a urethane acrylate-based photopolymer, which are applied as a film to a support and then exposed in selected portions of the film to an applied magnetic or electric field. The field can be applied either uniaxially or biaxially at field strengths up to 150 G or higher to form the field structured materials. After polymerizing the field-structure materials, a magnetic field can be applied to selected portions of the polymerized field-structured material to yield a dual-level memory material on the support, wherein the dual-level memory material supports read-and-write binary data memory and write once, read many memory.

  3. Parallel garbage collection on a virtual memory system

    SciTech Connect (OSTI)

    Abraham, S.G.; Patel, J.H.

    1987-01-01

    Since most artificial intelligence applications are programmed in list processing languages, it is important to design architectures to support efficient garbage collection. This paper presents an architecture and an associated algorithm for parallel garbage collection on a virtual memory system. All the previously proposed parallel algorithms attempt to collect cells released by the list processor during the garbage collection cycle. We do not attempt to collect such cells. As a consequence, the list processor incurs little overhead in the proposed scheme, since it need not synchronize with the collector. Most parallel algorithms are designed for shared memory machines which have certain implicit synchronization functions on variable access. The proposed algorithm is designed for virtual memory systems where both the list processor and the garbage collector have private memories. The enforcement of coherence between the two private memories can be expensive and is not necessary in our scheme. 15 refs., 3 figs.

  4. Remote direct memory access over datagrams

    DOE Patents [OSTI]

    Grant, Ryan Eric; Rashti, Mohammad Javad; Balaji, Pavan; Afsahi, Ahmad

    2014-12-02

    A communication stack for providing remote direct memory access (RDMA) over a datagram network is disclosed. The communication stack has a user level interface configured to accept datagram related input and communicate with an RDMA enabled network interface card (NIC) via an NIC driver. The communication stack also has an RDMA protocol layer configured to supply one or more data transfer primitives for the datagram related input of the user level. The communication stack further has a direct data placement (DDP) layer configured to transfer the datagram related input from a user storage to a transport layer based on the one or more data transfer primitives by way of a lower layer protocol (LLP) over the datagram network.

  5. Direct memory access transfer completion notification

    DOE Patents [OSTI]

    Archer, Charles J.; Blocksome, Michael A.; Parker, Jeffrey J.

    2011-02-15

    DMA transfer completion notification includes: inserting, by an origin DMA engine on an origin node in an injection first-in-first-out (`FIFO`) buffer, a data descriptor for an application message to be transferred to a target node on behalf of an application on the origin node; inserting, by the origin DMA engine, a completion notification descriptor in the injection FIFO buffer after the data descriptor for the message, the completion notification descriptor specifying a packet header for a completion notification packet; transferring, by the origin DMA engine to the target node, the message in dependence upon the data descriptor; sending, by the origin DMA engine, the completion notification packet to a local reception FIFO buffer using a local memory FIFO transfer operation; and notifying, by the origin DMA engine, the application that transfer of the message is complete in response to receiving the completion notification packet in the local reception FIFO buffer.

  6. Memory device using movement of protons

    DOE Patents [OSTI]

    Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.; Archer, Leo B.; Brown, George A.; Wallace, Robert M.

    2000-01-01

    An enhancement of an electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure during an anneal in an atmosphere containing hydrogen gas. Device operation is enhanced by concluding this anneal step with a sudden cooling. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronics elements on the same silicon substrate.

  7. MULTI-ELECTRODE TUBE PULSE MEMORY CIRCUIT

    DOE Patents [OSTI]

    Gundlach, J.C.; Reeves, J.B.

    1958-05-20

    Control circuits are described for pulse memory devices for scalers and the like, and more particularly to a driving or energizing circuit for a polycathode gaseous discharge tube having an elongated anode and a successive series of cathodes spaced opposite the anode along its length. The circuit is so arranged as to utilize an arc discharge between the anode and a cathode to count a series of pulses. Upon application of an input pulse the discharge is made to occur between the anode and the next successive cathode, and an output pulse is produced when a particular subsequent cathode is reached. The circuit means for transfering the discharge by altering the anode potential and potential of the cathodes and interconnecting the cathodes constitutes the novel aspects of the invention. A low response time and reduced number of circuit components are the practical advantages of the described circuit.

  8. Solid state engine using nitinol memory alloy

    DOE Patents [OSTI]

    Golestaneh, A.A.

    1980-01-21

    A device for converting heat energy to mechanical energy includes a reservoir of a hot fluid and a rotor assembly mounted thereabove so a portion of it dips into the hot fluid. The rotor assembly may include a shaft having four spokes extending radially outwardly therefrom at right angles to each other, a floating ring and four flexible elements composed of a thermal memory material having a critical temperature between the temperature of the hot fluid and that of the ambient atmosphere extending between the ends of the spokes and the floating ring. Preferably, the flexible elements are attached to the floating ring through curved leaf springs. Energetic shape recovery of the flexible elements in the hot fluid causes the rotor assembly to rotate.

  9. Solid state engine using nitinol memory alloy

    DOE Patents [OSTI]

    Golestaneh, Ahmad A.

    1981-01-01

    A device for converting heat energy to mechanical energy includes a reservoir of a hot fluid and a rotor assembly mounted thereabove so a portion of it dips into the hot fluid. The rotor assembly may include a shaft having four spokes extending radially outwardly therefrom at right angles to each other, a floating ring and four flexible elements composed of a thermal memory material having a critical temperature between the temperature of the hot fluid and that of the ambient atmosphere extending between the ends of the spokes and the floating ring. Preferably, the flexible elements are attached to the floating ring through curved leaf springs. Energetic shape recovery of the flexible elements in the hot fluid causes the rotor assembly to rotate.

  10. Hardware support for collecting performance counters directly to memory

    DOE Patents [OSTI]

    Gara, Alan; Salapura, Valentina; Wisniewski, Robert W.

    2012-09-25

    Hardware support for collecting performance counters directly to memory, in one aspect, may include a plurality of performance counters operable to collect one or more counts of one or more selected activities. A first storage element may be operable to store an address of a memory location. A second storage element may be operable to store a value indicating whether the hardware should begin copying. A state machine may be operable to detect the value in the second storage element and trigger hardware copying of data in selected one or more of the plurality of performance counters to the memory location whose address is stored in the first storage element.

  11. An examination of content similarity within the memory of HPC applications.

    SciTech Connect (OSTI)

    Levy, Scott N.; Bridges, Patrick G.; Ferreira, Kurt Brian; Thompson, Aidan Patrick; Trott, Christian Robert

    2013-01-01

    Memory content similarity has been e ectively exploited for more than a decade to reduce memory consumption. By consolidating duplicate and similar pages in the address space of an application, we can reduce the amount of memory it consumes without negatively a ecting the application's perception of the memory resources available to it. In addition to memory de-duplication, there may be many other ways that we can exploit memory content similarity to improve system characteristics. In this paper, we examine the memory content similarity of several HPC applications. By characterizing the memory contents of these applications, we hope to provide a basis for ef- forts to e ectively exploit memory content similarity to improve system performance beyond memory deduplication. We show that several applications exhibit signi cant similarity and consider the source of the similarity.

  12. Multi-range force sensors utilizing shape memory alloys

    DOE Patents [OSTI]

    Varma, Venugopal K.

    2003-04-15

    The present invention provides a multi-range force sensor comprising a load cell made of a shape memory alloy, a strain sensing system, a temperature modulating system, and a temperature monitoring system. The ability of the force sensor to measure contact forces in multiple ranges is effected by the change in temperature of the shape memory alloy. The heating and cooling system functions to place the shape memory alloy of the load cell in either a low temperature, low strength phase for measuring small contact forces, or a high temperature, high strength phase for measuring large contact forces. Once the load cell is in the desired phase, the strain sensing system is utilized to obtain the applied contact force. The temperature monitoring system is utilized to ensure that the shape memory alloy is in one phase or the other.

  13. T-625: Opera Frameset Handling Memory Corruption Vulnerability

    Broader source: Energy.gov [DOE]

    The vulnerability is caused due to an error when handling certain frameset constructs during page unloading and can be exploited to corrupt memory via a specially crafted web page.

  14. Collective Memory Transfers for Multi-Core Chips

    SciTech Connect (OSTI)

    Michelogiannakis, George; Williams, Alexander; Shalf, John

    2013-11-13

    Future performance improvements for microprocessors have shifted from clock frequency scaling towards increases in on-chip parallelism. Performance improvements for a wide variety of parallel applications require domain-decomposition of data arrays from a contiguous arrangement in memory to a tiled layout for on-chip L1 data caches and scratchpads. How- ever, DRAM performance suffers under the non-streaming access patterns generated by many independent cores. We propose collective memory scheduling (CMS) that actively takes control of collective memory transfers such that requests arrive in a sequential and predictable fashion to the memory controller. CMS uses the hierarchically tiled arrays formal- ism to compactly express collective operations, which greatly improves programmability over conventional prefetch or list- DMA approaches. CMS reduces application execution time by up to 32% and DRAM read power by 2.2×, compared to a baseline DMA architecture such as STI Cell.

  15. Consent Order, Battelle Memorial Institute – WCO-2014-01

    Broader source: Energy.gov [DOE]

    Worker Safety and Health Enforcement Consent Order issued to Battelle Memorial Institute for deficiencies associated with the Chronic Beryllium Disease Prevention Program at DOE’s Pacific Northwest National Laboratory.

  16. Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells

    SciTech Connect (OSTI)

    Yun, Min Ju; Kim, Hee-Dong; Man Hong, Seok; Hyun Park, Ju; Su Jeon, Dong; Geun Kim, Tae

    2014-03-07

    The metal nanocrystals (NCs) embedded-NiN-based resistive random access memory cells are demonstrated using several metal NCs (i.e., Pt, Ni, and Ti) with different physical parameters in order to investigate the metal NC's dependence on resistive switching (RS) characteristics. First, depending on the electronegativity of metal, the size of metal NCs is determined and this affects the operating current of memory cells. If metal NCs with high electronegativity are incorporated, the size of the NCs is reduced; hence, the operating current is reduced owing to the reduced density of the electric field around the metal NCs. Second, the potential wells are formed by the difference of work function between the metal NCs and active layer, and the barrier height of the potential wells affects the level of operating voltage as well as the conduction mechanism of metal NCs embedded memory cells. Therefore, by understanding these correlations between the active layer and embedded metal NCs, we can optimize the RS properties of metal NCs embedded memory cells as well as predict their conduction mechanisms.

  17. Shape memory polymer foams for endovascular therapies (Patent) | SciTech

    Office of Scientific and Technical Information (OSTI)

    Connect Patent: Shape memory polymer foams for endovascular therapies Citation Details In-Document Search Title: Shape memory polymer foams for endovascular therapies A system for occluding a physical anomaly. One embodiment comprises a shape memory material body wherein the shape memory material body fits within the physical anomaly occluding the physical anomaly. The shape memory material body has a primary shape for occluding the physical anomaly and a secondary shape for being positioned

  18. Static critical phenomena in Co-Ni-Ga ferromagnetic shape memory alloy

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Static critical phenomena in Co-Ni-Ga ferromagnetic shape memory alloy Citation Details In-Document Search Title: Static critical phenomena in Co-Ni-Ga ferromagnetic shape memory alloy Ferromagnetic shape memory alloys are smart materials because they exhibit temperature driven shape memory effect and magnetic field induced strain. Thus two types of energy, i.e. thermal and magnetic, are used to control their shape memory behaviour. Study of critical

  19. Data-Intensive Memory-Map simulator and runtime

    Energy Science and Technology Software Center (OSTI)

    2012-05-01

    DI-MMAP is a simulator for modeling the performance of next generation non-volatile random access memory technologies (NVRAM) and a high-perfromance memory-map runtime for the Linux operating system. It is implemented as a device driver for the Linux operating system. It will be used by algorithm designers to unserstand the impact of future NVRAM on their algorithms and will be used by application developers for high-performance access to NVRAM storage.

  20. Post-Polymerization Crosslinked Polyurethane Shape-Memory Polymers (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Post-Polymerization Crosslinked Polyurethane Shape-Memory Polymers Citation Details In-Document Search Title: Post-Polymerization Crosslinked Polyurethane Shape-Memory Polymers Authors: Hearon, K ; Gall, K ; Ware, T ; Maitland, D J ; Bearinger, J P ; Wilson, T S Publication Date: 2010-04-22 OSTI Identifier: 1129122 Report Number(s): LLNL-JRNL-430624 DOE Contract Number: W-7405-ENG-48 Resource Type: Journal Article Resource Relation: Journal Name: Journal of Applied

  1. Low density biodegradable shape memory polyurethane foams for embolic

    Office of Scientific and Technical Information (OSTI)

    biomedical applications (Journal Article) | SciTech Connect SciTech Connect Search Results Journal Article: Low density biodegradable shape memory polyurethane foams for embolic biomedical applications Citation Details In-Document Search Title: Low density biodegradable shape memory polyurethane foams for embolic biomedical applications Authors: Singhal, P ; Small, W ; Cosgriff-Hernandez, E ; Maitland, D ; Wilson, T Publication Date: 2013-02-27 OSTI Identifier: 1122211 Report Number(s):

  2. Method for loading shape memory polymer gripper mechanisms (Patent) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Method for loading shape memory polymer gripper mechanisms Citation Details In-Document Search Title: Method for loading shape memory polymer gripper mechanisms Ă— You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional information resources in energy science and technology. A paper copy of this

  3. Using DMA for copying performance counter data to memory

    DOE Patents [OSTI]

    Gara, Alan; Salapura, Valentina; Wisniewski, Robert W

    2013-12-31

    A device for copying performance counter data includes hardware path that connects a direct memory access (DMA) unit to a plurality of hardware performance counters and a memory device. Software prepares an injection packet for the DMA unit to perform copying, while the software can perform other tasks. In one aspect, the software that prepares the injection packet runs on a processing core other than the core that gathers the hardware performance data.

  4. Method for fabricating uranium alloy articles without shape memory effects

    DOE Patents [OSTI]

    Banker, J.G.

    1980-05-21

    Uranium-rich niobium and niobium-zirconium alloys possess a characteristic known as shape memory effect wherein shaped articles of these alloys recover their original shape when heated. The present invention circumvents this memory behavior by forming the alloys into the desired configuration at elevated temperatures with cold matched dies and maintaining the shaped articles between the dies until the articles cool to ambient temperature.

  5. Using DMA for copying performance counter data to memory

    DOE Patents [OSTI]

    Gara, Alan; Salapura, Valentina; Wisniewski, Robert W.

    2012-09-25

    A device for copying performance counter data includes hardware path that connects a direct memory access (DMA) unit to a plurality of hardware performance counters and a memory device. Software prepares an injection packet for the DMA unit to perform copying, while the software can perform other tasks. In one aspect, the software that prepares the injection packet runs on a processing core other than the core that gathers the hardware performance counter data.

  6. Method for fabricating uranium alloy articles without shape memory effects

    DOE Patents [OSTI]

    Banker, John G.

    1985-01-01

    Uranium-rich niobium and niobium-zirconium alloys possess a characteristic known as shape memory effect wherein shaped articles of these alloys recover their original shape when heated. The present invention circumvents this memory behavior by forming the alloys into the desired configuration at elevated temperatures with "cold" matched dies and maintaining the shaped articles between the dies until the articles cool to ambient temperature.

  7. Emerging Memory Technologies: IRPS Tutorial. (Conference) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Emerging Memory Technologies: IRPS Tutorial. Citation Details In-Document Search Title: Emerging Memory Technologies: IRPS Tutorial. Authors: Marinella, Matthew Publication Date: 2013-03-01 OSTI Identifier: 1067670 Report Number(s): SAND2013-1732C DOE Contract Number: AC04-94AL85000 Resource Type: Conference Resource Relation: Conference: Proposed for presentation at the International Reliability Physics Symposium held April 14-18, 2013 in Monterey, CA

  8. Emerging Nanoscale Memory Technologies: The Solution to Extreme Scale

    Office of Scientific and Technical Information (OSTI)

    Problems. (Conference) | SciTech Connect Emerging Nanoscale Memory Technologies: The Solution to Extreme Scale Problems. Citation Details In-Document Search Title: Emerging Nanoscale Memory Technologies: The Solution to Extreme Scale Problems. Abstract not provided. Authors: Marinella, Matthew Publication Date: 2014-03-01 OSTI Identifier: 1140869 Report Number(s): SAND2014-2102C 505337 DOE Contract Number: DE-AC04-94AL85000 Resource Type: Conference Resource Relation: Conference: Nano and

  9. Emerging Resistive Switching Memory Technologies: Overview and Current

    Office of Scientific and Technical Information (OSTI)

    Status. (Conference) | SciTech Connect Emerging Resistive Switching Memory Technologies: Overview and Current Status. Citation Details In-Document Search Title: Emerging Resistive Switching Memory Technologies: Overview and Current Status. Abstract not provided. Authors: Marinella, Matthew Publication Date: 2014-05-01 OSTI Identifier: 1147687 Report Number(s): SAND2014-4459C 521502 DOE Contract Number: DE-AC04-94AL85000 Resource Type: Conference Resource Relation: Conference: ISCAS 2014 held

  10. Energy scaling advantages of resistive memory crossbar based computation

    Office of Scientific and Technical Information (OSTI)

    and its application to sparse coding (Journal Article) | DOE PAGES Energy scaling advantages of resistive memory crossbar based computation and its application to sparse coding Title: Energy scaling advantages of resistive memory crossbar based computation and its application to sparse coding In this study, the exponential increase in data over the last decade presents a significant challenge to analytics efforts that seek to process and interpret such data for various applications.

  11. Memorandum Memorializing Ex Parte Communication | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    February 17, 2011, personnel from Urenco, Inc. on behalf of Louisiana Energy Services, LLC ("LES") met with U.S. Department of Energy (DOE) staff to discuss DOE's Notice of Inquiry and request for comments on regulations pertaining to the Convention on Supplementary Compensation for Nuclear Damage, as published in the Federal Register on July 27, 2010 (75 FR 43945). PDF icon Memorandum Memorializing Ex Parte Communication More Documents & Publications Memorandum Memorializing Ex

  12. NERSC Veteran Kirby Fong Shares Fascinating Memories from the Center's

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Early Days veteran Kirby Fong shares fascinating memories from the center's early days NERSC Veteran Kirby Fong Shares Fascinating Memories from the Center's Early Days April 16, 2014 by Francesca Verdier Kirby Fong arrived at the Controlled Thermonuclear Research Computer Center, as NERSC was initially named, in June 1976. His job was to provide mathematical library software to users and to support them in finding and using it. In those days scientific programming was in Fortran, and scalar

  13. Lattice Vibrations Boost Demagnetization Entropy in Shape Memory Alloy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (Journal Article) | DOE PAGES Accepted Manuscript: Lattice Vibrations Boost Demagnetization Entropy in Shape Memory Alloy This content will become publicly available on October 7, 2016 Title: Lattice Vibrations Boost Demagnetization Entropy in Shape Memory Alloy Magnetocaloric (MC) materials present an avenue for chemical-free, solid state refrigeration through cooling via adiabatic demagnetization. We have used inelastic neutron scattering to measure the lattice dynamics in the MC material

  14. Low density biodegradable shape memory polyurethane foams for embolic

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    biomedical applications (Journal Article) | SciTech Connect Low density biodegradable shape memory polyurethane foams for embolic biomedical applications Citation Details In-Document Search Title: Low density biodegradable shape memory polyurethane foams for embolic biomedical applications Authors: Singhal, P ; Small, W ; Cosgriff-Hernandez, E ; Maitland, D ; Wilson, T Publication Date: 2013-02-27 OSTI Identifier: 1122211 Report Number(s): LLNL-JRNL-623392 DOE Contract Number: W-7405-ENG-48

  15. Shape memory polymers (Patent) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Shape memory polymers Citation Details In-Document Search Title: Shape memory polymers Ă— You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional information resources in energy science and technology. A paper copy of this document is also available for sale to the public from the National Technical Information

  16. Shell-Based Simulation of Filamentary Resistive Memory. (Journal Article) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Journal Article: Shell-Based Simulation of Filamentary Resistive Memory. Citation Details In-Document Search Title: Shell-Based Simulation of Filamentary Resistive Memory. Abstract not provided. Authors: Lohn, Andrew ; Mickel, Patrick R. ; Marinella, Matthew Publication Date: 2014-06-01 OSTI Identifier: 1183002 Report Number(s): SAND2014-15228J 534144 DOE Contract Number: AC04-94AL85000 Resource Type: Journal Article Resource Relation: Journal Name: Nanotechnology Research

  17. Similarity Engine: Using Content Similarity to Improve Memory Resilience.

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Conference: Similarity Engine: Using Content Similarity to Improve Memory Resilience. Citation Details In-Document Search Title: Similarity Engine: Using Content Similarity to Improve Memory Resilience. Abstract not provided. Authors: Levy, Scott N. ; Ferreira, Kurt Brian ; Bridges, Patrick G Publication Date: 2016-01-01 OSTI Identifier: 1239385 Report Number(s): SAND2016-0499C 618682 DOE Contract Number: AC04-94AL85000 Resource Type: Conference Resource

  18. The implications of working set analysis on supercomputing memory hierarchy

    Office of Scientific and Technical Information (OSTI)

    design. (Conference) | SciTech Connect working set analysis on supercomputing memory hierarchy design. Citation Details In-Document Search Title: The implications of working set analysis on supercomputing memory hierarchy design. Supercomputer architects strive to maximize the performance of scientific applications. Unfortunately, the large, unwieldy nature of most scientific applications has lead to the creation of artificial benchmarks, such as SPEC-FP, for architecture research. Given the

  19. Ultra Low Density Amorphous Shape Memory polymer Foams. (Conference) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Conference: Ultra Low Density Amorphous Shape Memory polymer Foams. Citation Details In-Document Search Title: Ultra Low Density Amorphous Shape Memory polymer Foams. Authors: Singhal, P ; Small, W ; Rodriguez, J N ; Letts, S ; Maitland, D J ; Wilson, T S Publication Date: 2012-03-15 OSTI Identifier: 1090826 Report Number(s): LLNL-PROC-539171 DOE Contract Number: W-7405-ENG-48 Resource Type: Conference Resource Relation: Conference: Presented at: American Chemical Society,

  20. Ultra Low Density and Highly Crosslinked Biocompatible Shape Memory

    Office of Scientific and Technical Information (OSTI)

    Polyurethane Foams (Journal Article) | SciTech Connect Ultra Low Density and Highly Crosslinked Biocompatible Shape Memory Polyurethane Foams Citation Details In-Document Search Title: Ultra Low Density and Highly Crosslinked Biocompatible Shape Memory Polyurethane Foams Authors: Singhal, P ; Rodriguez, J N ; Small IV, W ; Eagleaston, S ; De Water, J V ; Maitland, D J ; Wilson, T S Publication Date: 2011-09-15 OSTI Identifier: 1111124 Report Number(s): LLNL-JRNL-501951 DOE Contract Number:

  1. Library API for Z-Order Memory Layout

    Energy Science and Technology Software Center (OSTI)

    2015-02-01

    This library provides a simple-to-use API for implementing an altnerative to traditional row-major order in-memory layout, one based on a Morton- order space filling curve (SFC) , specifically, a Z-order variant of the Morton order curve. The library enables programmers to, after a simple initialization step, to convert a multidimensional array from row-major to Z- order layouts, then use a single, generic API call to access data from any arbitrary (i,j,k) location from within themore » array, whether it it be stored in row- major or z-order format. The motivation for using a SFC in-memory layout is for improved spatial locality, which results in increased use of local high speed cache memory. The basic idea is that with row-major order layouts, a data access to some location that is nearby in index space is likely far away in physical memory, resulting in poor spatial locality and slow runtime. On the other hand, with a SFC-based layout, accesses that are nearby in index space are much more likely to also be nearby in physical memory, resulting in much better spatial locality, and better runtime performance. Numerous studies over the years have shown significant runtime performance gains are realized by using a SFC-based memory layout compared to a row-major layout, sometimes by as much as 50%, which result from the better use of the memory and cache hierarchy that are attendant with a SFC-based layout (see, for example, [Beth2012]). This library implementation is intended for use with codes that work with structured, array-based data in 2 or 3 dimensions. It is not appropriate for use with unstructured or point-based data.« less

  2. Cycle accurate and cycle reproducible memory for an FPGA based hardware accelerator

    DOE Patents [OSTI]

    Asaad, Sameh W.; Kapur, Mohit

    2016-03-15

    A method, system and computer program product are disclosed for using a Field Programmable Gate Array (FPGA) to simulate operations of a device under test (DUT). The DUT includes a device memory having a number of input ports, and the FPGA is associated with a target memory having a second number of input ports, the second number being less than the first number. In one embodiment, a given set of inputs is applied to the device memory at a frequency Fd and in a defined cycle of time, and the given set of inputs is applied to the target memory at a frequency Ft. Ft is greater than Fd and cycle accuracy is maintained between the device memory and the target memory. In an embodiment, a cycle accurate model of the DUT memory is created by separating the DUT memory interface protocol from the target memory storage array.

  3. Scalable Memory Registration for High-Performance Networks Using Helper Threads

    SciTech Connect (OSTI)

    Li, Dong; Cameron, Kirk W.; Nikolopoulos, Dimitrios; de Supinski, Bronis R.; Schulz, Martin

    2011-01-01

    Remote DMA (RDMA) enables high performance networks to reduce data copying between an application and the operating system (OS). However RDMA operations in some high performance networks require communication memory explicitly registered with the network adapter and pinned by the OS. Memory registration and pinning limits the flexibility of the memory system and reduces the amount of memory that user processes can allocate. These issues become more significant on multicore platforms, since registered memory demand grows linearly with the number of processor cores. In this paper we propose a new memory registration/deregistration strategy to reduce registered memory on multicore architectures for HPC applications. We hide the cost of dynamic memory management by offloading all dynamic memory registration and deregistration requests to a dedicated memory management helper thread. We investigate design policies and performance implications of the helper thread approach. We evaluate our framework with the NAS parallel benchmarks, for which our registration scheme significantly reduces the registered memory (23.62% on average and up to 49.39%) and avoids memory registration/deregistration costs for reused communication memory. We show that our system enables the execution of problem sizes that could not complete under existing memory registration strategies.

  4. Compiler-Assisted Detection of Transient Memory Errors

    SciTech Connect (OSTI)

    Tavarageri, Sanket; Krishnamoorthy, Sriram; Sadayappan, Ponnuswamy

    2014-06-09

    The probability of bit flips in hardware memory systems is projected to increase significantly as memory systems continue to scale in size and complexity. Effective hardware-based error detection and correction requires that the complete data path, involving all parts of the memory system, be protected with sufficient redundancy. First, this may be costly to employ on commodity computing platforms and second, even on high-end systems, protection against multi-bit errors may be lacking. Therefore, augmenting hardware error detection schemes with software techniques is of consider- able interest. In this paper, we consider software-level mechanisms to comprehensively detect transient memory faults. We develop novel compile-time algorithms to instrument application programs with checksum computation codes so as to detect memory errors. Unlike prior approaches that employ checksums on computational and architectural state, our scheme verifies every data access and works by tracking variables as they are produced and consumed. Experimental evaluation demonstrates that the proposed comprehensive error detection solution is viable as a completely software-only scheme. We also demonstrate that with limited hardware support, overheads of error detection can be further reduced.

  5. Standards for message-passing in a distributed memory environment

    SciTech Connect (OSTI)

    Walker, D.W.

    1992-08-01

    This report presents a summary of the main ideas presented at the First CRPC Work-shop on Standards for Message Passing in a Distributed Memory Environment, held April 29-30, 1992, in Williamsburg, Virginia. This workshop attracted 68 attendees including representative from major hardware and software vendors, and was the first in a series of workshops sponsored by the Center for Research on Parallel Computation. The aim of this series of workshops is to develop and implement a standard for message passing on distributed memory concurrent computers, thereby making it easier to develop efficient, portable application codes for such machines. The report discusses the main issues raised in the CRPC workshop, and describes proposed desirable features of a message passing standard for distributed memory environments.

  6. Method of preparing a two-way shape memory alloy

    DOE Patents [OSTI]

    Johnson, A.D.

    1984-03-06

    A two-way shape memory alloy, a method of training a shape memory alloy, and a heat engine employing the two-way shape memory alloy to do external work during both heating and cooling phases are disclosed. The alloy is heated under a first training stress to a temperature which is above the upper operating temperature of the alloy, then cooled to a cold temperature below the zero-force transition temperature of the alloy, then deformed while applying a second training stress which is greater in magnitude than the stress at which the alloy is to be operated, then heated back to the hot temperature, changing from the second training stress back to the first training stress. 8 figs.

  7. Method of preparing a two-way shape memory alloy

    DOE Patents [OSTI]

    Johnson, Alfred D.

    1984-01-01

    A two-way shape memory alloy, a method of training a shape memory alloy, and a heat engine employing the two-way shape memory alloy to do external work during both heating and cooling phases. The alloy is heated under a first training stress to a temperature which is above the upper operating temperature of the alloy, then cooled to a cold temperature below the zero-force transition temperature of the alloy, then deformed while applying a second training stress which is greater in magnitude than the stress at which the alloy is to be operated, then heated back to the hot temperature, changing from the second training stress back to the first training stress.

  8. A prototype functional language implementation for hierarchical- memory architectures

    SciTech Connect (OSTI)

    Wolski, R.; Feo, J.; Cann, D.

    1992-01-14

    Programming languages are the most important tool at a programmers' disposal. All other tools correct, visualize, or evaluate the product crafted by this tool. The advent of multiprocessor computer systems has greatly complicated the programmer's task an increased his need for high-level languages capable of automatically taming these architectures. In this paper, we describe a prototype implementation of Sisal for multiprocessor, hierarchical-memory systems. The implementation includes explicit compiler and runtime control that effectively exploits the different levels of memory and manages interprocess communications (IPC). We give preliminary performance results for this system on the BBN TC2000.

  9. Biomedical Applications of Thermally Activated Shape Memory Polymers

    SciTech Connect (OSTI)

    Small IV, W; Singhal, P; Wilson, T S; Maitland, D J

    2009-04-10

    Shape memory polymers (SMPs) are smart materials that can remember a primary shape and can return to this primary shape from a deformed secondary shape when given an appropriate stimulus. This property allows them to be delivered in a compact form via minimally invasive surgeries in humans, and deployed to achieve complex final shapes. Here we review the various biomedical applications of SMPs and the challenges they face with respect to actuation and biocompatibility. While shape memory behavior has been demonstrated with heat, light and chemical environment, here we focus our discussion on thermally stimulated SMPs.

  10. Quantum anomalous Hall effect in topological insulator memory

    SciTech Connect (OSTI)

    Jalil, Mansoor B. A.; Tan, S. G.; Siu, Z. B.

    2015-05-07

    We theoretically investigate the quantum anomalous Hall effect (QAHE) in a magnetically coupled three-dimensional-topological insulator (3D-TI) system. We apply the generalized spin-orbit coupling Hamiltonian to obtain the Hall conductivity ?{sup xy} of the system. The underlying topology of the QAHE phenomenon is then analyzed to show the quantization of ?{sup xy} and its relation to the Berry phase of the system. Finally, we analyze the feasibility of utilizing ?{sup xy} as a memory read-out in a 3D-TI based memory at finite temperatures, with comparison to known magnetically doped 3D-TIs.

  11. Deadlock during first touch of upc_alloc'd remote memory when...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reports Deadlock during first touch of upcalloc'd remote memory when target is in upcbarrier Deadlock during first touch of upcalloc'd remote memory when target is in...

  12. V-194: Citrix XenServer Memory Management Error Lets Local Administrat...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    XenServer Memory Management Error Lets Local Administrative Users on the Guest Gain Access on the Host V-194: Citrix XenServer Memory Management Error Lets Local Administrative...

  13. Shape-memory transformations of NiTi: Minimum-energy pathways...

    Office of Scientific and Technical Information (OSTI)

    Shape-memory transformations of NiTi: Minimum-energy pathways between austenite, ... Citation Details In-Document Search Title: Shape-memory transformations of NiTi: ...

  14. Multiscale twin hierarchy in NiMnGa shape memory alloys with...

    Office of Scientific and Technical Information (OSTI)

    Multiscale twin hierarchy in NiMnGa shape memory alloys with Fe and Cu Citation Details In-Document Search Title: Multiscale twin hierarchy in NiMnGa shape memory alloys with Fe ...

  15. High-G testing of MEMS mechanical non-volatile memory and silicon...

    Office of Scientific and Technical Information (OSTI)

    High-G testing of MEMS mechanical non-volatile memory and silicon re-entry switch. Citation Details In-Document Search Title: High-G testing of MEMS mechanical non-volatile memory...

  16. Preliminary Notice of Violation, Battelle Memorial Institute- EA-2007-07

    Broader source: Energy.gov [DOE]

    Issued to Battelle Memorial Institute related to Radiological Events and the Independent Assessment Program at the Pacific Northwest National Laboratory

  17. Shape memory polymer foams for endovascular therapies (Patent) | SciTech

    Office of Scientific and Technical Information (OSTI)

    Connect polymer foams for endovascular therapies Citation Details In-Document Search Title: Shape memory polymer foams for endovascular therapies A system for occluding a physical anomaly. One embodiment comprises a shape memory material body wherein the shape memory material body fits within the physical anomaly occluding the physical anomaly. The shape memory material body has a primary shape for occluding the physical anomaly and a secondary shape for being positioned in the physical

  18. Thermodynamic constitutive model for load-biased thermal cycling test of shape memory alloy

    SciTech Connect (OSTI)

    Young, Sung; Nam, Tae-Hyun

    2013-12-15

    Graphical abstract: - Highlights: • Thermodynamic calculation model for martensitic transformation of shape memory alloy was proposed. • Evolution of the self-accommodation was considered independently by a rate-dependent kinetic equation. • Finite element calculation was conducted for B2–B19? transformation of Ti–44.5Ni–5Cu–0.5 V (at.%). • Three-dimensional numerical results predict the macroscopic strain under bias loading accurately. - Abstract: This paper presents a three-dimensional calculation model for martensitic phase transformation of shape memory alloy. Constitutive model based on thermodynamic theory was provided. The average behavior was accounted for by considering the volume fraction of each martensitic variant in the material. Evolution of the volume fraction of each variant was determined by a rate-dependent kinetic equation. We assumed that nucleation rate is faster for the self-accommodation than for the stress-induced variants. Three-dimensional finite element analysis was conducted and the results were compared with the experimental data of Ti–44.5Ni–5Cu–0.5 V (at.%) alloy under bias loading.

  19. Case Study in Corporate Memory Recovery: Hanford Tank Farms Miscellaneous Underground Waste Storage Tanks - 15344

    SciTech Connect (OSTI)

    Washenfelder, D. J.; Johnson, J. M.; Turknett, J. C.; Barnes, T. J.; Duncan, K. G.

    2015-01-07

    In addition to managing the 177 underground waste storage tanks containing 212,000 m3 (56 million gal) of radioactive waste at the U. S. Department of Energy’s Hanford Site 200 Area Tank Farms, Washington River Protection Solutions LLC is responsible for managing numerous small catch tanks and special surveillance facilities. These are collectively known as “MUSTs” - Miscellaneous Underground Storage Tanks. The MUSTs typically collected drainage and flushes during waste transfer system piping changes; special surveillance facilities supported Tank Farm processes including post-World War II uranium recovery and later fission product recovery from tank wastes. Most were removed from service following deactivation of the single-shell tank system in 1980 and stabilized by pumping the remaining liquids from them. The MUSTs were isolated by blanking connecting transfer lines and adding weatherproofing to prevent rainwater entry. Over the next 30 years MUST operating records were dispersed into large electronic databases or transferred to the National Archives Regional Center in Seattle, Washington. During 2014 an effort to reacquire the historical bases for the MUSTs’ published waste volumes was undertaken. Corporate Memory Recovery from a variety of record sources allowed waste volumes to be initially determined for 21 MUSTs, and waste volumes to be adjusted for 37 others. Precursors and symptoms of Corporate Memory Loss were identified in the context of MUST records recovery.

  20. Kokkos: Enabling manycore performance portability through polymorphic memory access patterns

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Carter Edwards, H.; Trott, Christian R.; Sunderland, Daniel

    2014-07-22

    The manycore revolution can be characterized by increasing thread counts, decreasing memory per thread, and diversity of continually evolving manycore architectures. High performance computing (HPC) applications and libraries must exploit increasingly finer levels of parallelism within their codes to sustain scalability on these devices. We found that a major obstacle to performance portability is the diverse and conflicting set of constraints on memory access patterns across devices. Contemporary portable programming models address manycore parallelism (e.g., OpenMP, OpenACC, OpenCL) but fail to address memory access patterns. The Kokkos C++ library enables applications and domain libraries to achieve performance portability on diversemore » manycore architectures by unifying abstractions for both fine-grain data parallelism and memory access patterns. In this paper we describe Kokkos’ abstractions, summarize its application programmer interface (API), present performance results for unit-test kernels and mini-applications, and outline an incremental strategy for migrating legacy C++ codes to Kokkos. Furthermore, the Kokkos library is under active research and development to incorporate capabilities from new generations of manycore architectures, and to address a growing list of applications and domain libraries.« less

  1. T-622: Adobe Acrobat and Reader Unspecified Memory Corruption Vulnerability

    Broader source: Energy.gov [DOE]

    The vulnerability is due to an unspecified error in the affected software when it processes .pdf files. An unauthenticated, remote attacker could exploit this vulnerability by convincing a user to view a malicious .pdf file. When viewed, the file could trigger a memory corruption error that could allow the attacker to execute arbitrary code on the system with the privileges of the user.

  2. Large Data Visualization on Distributed Memory Mulit-GPU Clusters

    SciTech Connect (OSTI)

    Childs, Henry R.

    2010-03-01

    Data sets of immense size are regularly generated on large scale computing resources. Even among more traditional methods for acquisition of volume data, such as MRI and CT scanners, data which is too large to be effectively visualization on standard workstations is now commonplace. One solution to this problem is to employ a 'visualization cluster,' a small to medium scale cluster dedicated to performing visualization and analysis of massive data sets generated on larger scale supercomputers. These clusters are designed to fit a different need than traditional supercomputers, and therefore their design mandates different hardware choices, such as increased memory, and more recently, graphics processing units (GPUs). While there has been much previous work on distributed memory visualization as well as GPU visualization, there is a relative dearth of algorithms which effectively use GPUs at a large scale in a distributed memory environment. In this work, we study a common visualization technique in a GPU-accelerated, distributed memory setting, and present performance characteristics when scaling to extremely large data sets.

  3. Secretary Moniz awards Hutcheon memorial nonproliferation fellowship to

    National Nuclear Security Administration (NNSA)

    Thomas Gray | National Nuclear Security Administration Moniz awards Hutcheon memorial nonproliferation fellowship to Thomas Gray | National Nuclear Security Administration Facebook Twitter Youtube Flickr RSS People Mission Managing the Stockpile Preventing Proliferation Powering the Nuclear Navy Emergency Response Recapitalizing Our Infrastructure Countering Nuclear Terrorism About Our Programs Our History Who We Are Our Leadership Our Locations Budget Our Operations Library Bios

  4. Performance evaluation of the SGI Origin2000: A memory-centric characterization of LANL ASCI applications

    SciTech Connect (OSTI)

    Wasserman, H.; Lubeck, O.M.; Luo, Y.; Bassetti, F.

    1997-11-01

    In this paper the authors compare single processor performance of the SGI Origin and PowerChallenge and utilize a previously reported performance model for hierarchical memory systems to explain the results. Both the Origin and PowerChallenge use the same microprocessor (MIPS R10000) but have significant differences in their memory subsystems. Their memory model includes the effect of overlap between CPU and memory operations and allows them to infer the individual contributions of all three improvements in the Origin`s memory architecture and relate the effectiveness of each improvement to application characteristics.

  5. CX-009184: Categorical Exclusion Determination

    Office of Energy Efficiency and Renewable Energy (EERE)

    (0675-1538) Battelle Memorial Institute - Fault Sensing in Operating Batteries CX(s) Applied: B3.6 Date: 09/06/2012 Location(s): Ohio, Ohio Offices(s): Advanced Research Projects Agency-Energy

  6. System for loading executable code into volatile memory in a downhole tool

    DOE Patents [OSTI]

    Hall, David R.; Bartholomew, David B.; Johnson, Monte L.

    2007-09-25

    A system for loading an executable code into volatile memory in a downhole tool string component comprises a surface control unit comprising executable code. An integrated downhole network comprises data transmission elements in communication with the surface control unit and the volatile memory. The executable code, stored in the surface control unit, is not permanently stored in the downhole tool string component. In a preferred embodiment of the present invention, the downhole tool string component comprises boot memory. In another embodiment, the executable code is an operating system executable code. Preferably, the volatile memory comprises random access memory (RAM). A method for loading executable code to volatile memory in a downhole tool string component comprises sending the code from the surface control unit to a processor in the downhole tool string component over the network. A central processing unit writes the executable code in the volatile memory.

  7. Measurements of radiation effects on a 4 Mb PSRAM memory

    SciTech Connect (OSTI)

    Gonçalez, Odair Lelis; Pereira Junior, Evaldo Carlos Fonseca; Vaz, Rafael Galhardo; Pereira, Marlon Antonio; Wirth, Gilson Inácio; Both, Thiago Hanna

    2014-11-11

    The results of a static test of total ionizing dose (TID) effects on an ISSI 4Mb PSRAM memory are reported in this work. The irradiation was performed at the IEAv’s Laboratory of Ionizing Radiation with 1.17 and 1.32 MeV gamma-rays from a {sup 60}Co source at a dose rate of 2.5 krad/h up to an accumulated dose of 215.7 krad. The TID threshold for bit flip found in this experiment was 52.5 krad. From a sampling of 4096 memory addresses it was estimated a bit flip rate of approximately 50% at an accumulated dose of 215.7 krad.

  8. Modeling aspects of human memory for scientific study.

    SciTech Connect (OSTI)

    Caudell, Thomas P.; Watson, Patrick; McDaniel, Mark A.; Eichenbaum, Howard B.; Cohen, Neal J.; Vineyard, Craig Michael; Taylor, Shawn Ellis; Bernard, Michael Lewis; Morrow, James Dan; Verzi, Stephen J.

    2009-10-01

    Working with leading experts in the field of cognitive neuroscience and computational intelligence, SNL has developed a computational architecture that represents neurocognitive mechanisms associated with how humans remember experiences in their past. The architecture represents how knowledge is organized and updated through information from individual experiences (episodes) via the cortical-hippocampal declarative memory system. We compared the simulated behavioral characteristics with those of humans measured under well established experimental standards, controlling for unmodeled aspects of human processing, such as perception. We used this knowledge to create robust simulations of & human memory behaviors that should help move the scientific community closer to understanding how humans remember information. These behaviors were experimentally validated against actual human subjects, which was published. An important outcome of the validation process will be the joining of specific experimental testing procedures from the field of neuroscience with computational representations from the field of cognitive modeling and simulation.

  9. Memorandum Memorializing Ex Parte Communication - August 12, 2011 |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Communication - August 12, 2011 Memorandum Memorializing Ex Parte Communication - August 12, 2011 On August 9, 2011, the Air-Conditioning, Heating and Refrigeration Institute's (AHRI) Unitary Small Engineering Committee, Compressors and Condensing Units Engineering Committee and Ductless Equipment Engineering Committee held a joint meeting to discuss the proposed standby power (off-mode) efficiency standards contained in the June 27, 2011 Direct Final Rule (76 Fed. Reg.

  10. Memorandum Memorializing Ex Parte Communication, November 9, 2015 related

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    to DOE impending coverage for commercial and industrial fans, blowers, and fume hoods | Department of Energy November 9, 2015 related to DOE impending coverage for commercial and industrial fans, blowers, and fume hoods Memorandum Memorializing Ex Parte Communication, November 9, 2015 related to DOE impending coverage for commercial and industrial fans, blowers, and fume hoods The meeting was requested by AMCA International to inform DOE and inquire regarding subjects that were covered

  11. Comparison of two paradigms for distributed shared memory

    SciTech Connect (OSTI)

    Levelt, W.G.; Kaashoek, M.F.; Bal, H.E.; Tanenbaum, A.S.

    1990-08-01

    The paper compares two paradigms for Distributed Shared Memory on loosely coupled computing systems: the shared data-object model as used in Orca, a programming language specially designed for loosely coupled computing systems and the Shared Virtual Memory model. For both paradigms the authors have implemented two systems, one using only point-to-point messages, the other using broadcasting as well. They briefly describe these two paradigms and their implementations. Then they compare their performance on four applications: the traveling salesman problem, alpha-beta search, matrix multiplication and the all pairs shortest paths problem. The measurements show that both paradigms can be used efficiently for programming large-grain parallel applications. Significant speedups were obtained on all applications. The unstructured Shared Virtual Memory paradigm achieves the best absolute performance, although this is largely due to the preliminary nature of the Orca compiler used. The structured shared data-object model achieves the highest speedups and is much easier to program and to debug.

  12. Limited-memory adaptive snapshot selection for proper orthogonal decomposition

    SciTech Connect (OSTI)

    Oxberry, Geoffrey M.; Kostova-Vassilevska, Tanya; Arrighi, Bill; Chand, Kyle

    2015-04-02

    Reduced order models are useful for accelerating simulations in many-query contexts, such as optimization, uncertainty quantification, and sensitivity analysis. However, offline training of reduced order models can have prohibitively expensive memory and floating-point operation costs in high-performance computing applications, where memory per core is limited. To overcome this limitation for proper orthogonal decomposition, we propose a novel adaptive selection method for snapshots in time that limits offline training costs by selecting snapshots according an error control mechanism similar to that found in adaptive time-stepping ordinary differential equation solvers. The error estimator used in this work is related to theory bounding the approximation error in time of proper orthogonal decomposition-based reduced order models, and memory usage is minimized by computing the singular value decomposition using a single-pass incremental algorithm. Results for a viscous Burgers’ test problem demonstrate convergence in the limit as the algorithm error tolerances go to zero; in this limit, the full order model is recovered to within discretization error. The resulting method can be used on supercomputers to generate proper orthogonal decomposition-based reduced order models, or as a subroutine within hyperreduction algorithms that require taking snapshots in time, or within greedy algorithms for sampling parameter space.

  13. Sort-First, Distributed Memory Parallel Visualization and Rendering

    SciTech Connect (OSTI)

    Bethel, E. Wes; Humphreys, Greg; Paul, Brian; Brederson, J. Dean

    2003-07-15

    While commodity computing and graphics hardware has increased in capacity and dropped in cost, it is still quite difficult to make effective use of such systems for general-purpose parallel visualization and graphics. We describe the results of a recent project that provides a software infrastructure suitable for general-purpose use by parallel visualization and graphics applications. Our work combines and extends two technologies: Chromium, a stream-oriented framework that implements the OpenGL programming interface; and OpenRM Scene Graph, a pipelined-parallel scene graph interface for graphics data management. Using this combination, we implement a sort-first, distributed memory, parallel volume rendering application. We describe the performance characteristics in terms of bandwidth requirements and highlight key algorithmic considerations needed to implement the sort-first system. We characterize system performance using a distributed memory parallel volume rendering application, a nd present performance gains realized by using scene specific knowledge to accelerate rendering through reduced network bandwidth. The contribution of this work is an exploration of general-purpose, sort-first architecture performance characteristics as applied to distributed memory, commodity hardware, along with a description of the algorithmic support needed to realize parallel, sort-first implementations.

  14. Mapping virtual addresses to different physical addresses for value disambiguation for thread memory access requests

    DOE Patents [OSTI]

    Gala, Alan; Ohmacht, Martin

    2014-09-02

    A multiprocessor system includes nodes. Each node includes a data path that includes a core, a TLB, and a first level cache implementing disambiguation. The system also includes at least one second level cache and a main memory. For thread memory access requests, the core uses an address associated with an instruction format of the core. The first level cache uses an address format related to the size of the main memory plus an offset corresponding to hardware thread meta data. The second level cache uses a physical main memory address plus software thread meta data to store the memory access request. The second level cache accesses the main memory using the physical address with neither the offset nor the thread meta data after resolving speculation. In short, this system includes mapping of a virtual address to a different physical addresses for value disambiguation for different threads.

  15. Shape memory properties and microstructural evolution of rapidly solidified CuAlBe alloys

    SciTech Connect (OSTI)

    Ergen, Semra; Uzun, Orhan; Yilmaz, Fikret; Kiliçaslan, M. Fatih

    2013-06-15

    In this work, the effects of Be addition on the microstructure and phase transformation temperatures of Cu–12Al–xBe (x = 0.4, 0.5 and 0.6 wt.%) shape memory alloys fabricated by using the arc-melting and melt-spinning techniques have been investigated. X-ray diffraction analysis revealed that the arc-melted alloys consisted of austenitic ?{sub 1}, martensitic ?{sub 1}? and ?{sub 2} precipitate phases, whereas melt-spun ribbons were composed of a fully martensitic phase. The average grain size of martensitic phases in melt-spun ribbons was determined by electron microscopy images, showing a decrease with increasing Beryllium (Be) amount. Moreover, it was found that the Be addition in the arc-melted alloys had a distinct effect on the morphology of the ?{sub 2} precipitate phase. Transmission electron microscopy analysis showed that the thickness of martensitic plates in the melt-spun ribbons reduced with increasing Be addition. In a differential scanning calorimeter analysis, no martensitic transformation (M{sub s}) peak was observed in arc-melted alloys, but it was clearly detected in melt-spun ribbons, in which M{sub s} decreased dramatically with increasing Be addition. The improvement in the shape memory ability of melt-spun ribbons was explained in terms of the refinement in grain size and martensitic plates. - Highlights: • The CuAlBe SMAs were produced by means of arc-melter and melt-spinner techniques. • MT was directly obtained in melt-spuns without any intermediate process. • The transformation temperatures decreased with increasing Be amount. • The thickness of martensitic plates in the ribbons reduced with increasing Be. • SMP of CuAl was improved by the addition of Be together with rapid solidification.

  16. The role of non-volatile memory from an application perspective

    SciTech Connect (OSTI)

    Kettering, Brett M; Nunez, James A

    2010-09-16

    Current, emerging, and future NVM (non-volatile memory) technologies give us hope that we will be able to architect HPC (high performance computing) systems that initially use them in a memory and storage hierarchy, and eventually use them as the memory and storage for the system, complete with ownership and protections as a HDD-based (hard-disk-drive-based) file system provides today.

  17. Magnetic Resonance Flow Velocity and Temperature Mapping of a Shape Memory

    Office of Scientific and Technical Information (OSTI)

    Polymer Foam Device (Journal Article) | SciTech Connect Magnetic Resonance Flow Velocity and Temperature Mapping of a Shape Memory Polymer Foam Device Citation Details In-Document Search Title: Magnetic Resonance Flow Velocity and Temperature Mapping of a Shape Memory Polymer Foam Device Interventional medical devices based on thermally responsive shape memory polymer (SMP) are under development to treat stroke victims. The goals of these catheter-delivered devices include re-establishing

  18. Shape-memory transformations of NiTi: Minimum-energy pathways between

    Office of Scientific and Technical Information (OSTI)

    austenite, martensites, and kinetically limited intermediate states (Journal Article) | DOE PAGES Shape-memory transformations of NiTi: Minimum-energy pathways between austenite, martensites, and kinetically limited intermediate states « Prev Next » Title: Shape-memory transformations of NiTi: Minimum-energy pathways between austenite, martensites, and kinetically limited intermediate states NiTi is the most used shape-memory alloy, nonetheless, a lack of understanding remains regarding

  19. Shape-memory transformations of NiTi: Minimum-energy pathways between

    Office of Scientific and Technical Information (OSTI)

    austenite, martensites, and kinetically limited intermediate states (Journal Article) | SciTech Connect Journal Article: Shape-memory transformations of NiTi: Minimum-energy pathways between austenite, martensites, and kinetically limited intermediate states Citation Details In-Document Search Title: Shape-memory transformations of NiTi: Minimum-energy pathways between austenite, martensites, and kinetically limited intermediate states NiTi is the most used shape-memory alloy, nonetheless, a

  20. In the OSTI Collections: Shape-Memory Materials | OSTI, US Dept of Energy,

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Office of Scientific and Technical Information Shape-Memory Materials View Past"In the OSTI Collections"Articles. Article Acknowledgement: Dr. William N. Watson, Physicist DOE Office of Scientific and Technical Information Shape-memory alloys Shape-memory polymers Transformations between shapes with different intrinsic curvature References Journal articles available through DOE PAGESBeta Reports available through OSTI's SciTech Connect Patents available through DOepatents

  1. Shape-memory transformations of NiTi: Minimum-energy pathways between

    Office of Scientific and Technical Information (OSTI)

    austenite, martensites, and kinetically limited intermediate states (Journal Article) | DOE PAGES Shape-memory transformations of NiTi: Minimum-energy pathways between austenite, martensites, and kinetically limited intermediate states Title: Shape-memory transformations of NiTi: Minimum-energy pathways between austenite, martensites, and kinetically limited intermediate states NiTi is the most used shape-memory alloy, nonetheless, a lack of understanding remains regarding the associated

  2. A fast and memory-sparing probabilistic selection algorithm for the GPU

    SciTech Connect (OSTI)

    Monroe, Laura M; Wendelberger, Joanne; Michalak, Sarah

    2010-09-29

    A fast and memory-sparing probabilistic top-N selection algorithm is implemented on the GPU. This probabilistic algorithm gives a deterministic result and always terminates. The use of randomization reduces the amount of data that needs heavy processing, and so reduces both the memory requirements and the average time required for the algorithm. This algorithm is well-suited to more general parallel processors with multiple layers of memory hierarchy. Probabilistic Las Vegas algorithms of this kind are a form of stochastic optimization and can be especially useful for processors having a limited amount of fast memory available.

  3. Method of pedestal and common-mode noise correction for switched-capacitor analog memories

    DOE Patents [OSTI]

    Britton, C.L.

    1996-12-31

    A method and apparatus are disclosed for correcting common-mode noise and pedestal noise in a multichannel array of switched-capacitor analog memories wherein each analog memory is connected to an associated analog-to-digital converter. The apparatus comprises a single differential element in two different embodiments. In a first embodiment, the differential element is a reference analog memory connected to a buffer. In the second embodiment, the differential element is a reference analog memory connected to a reference analog-to-digital connected to an array of digital summing circuits. 4 figs.

  4. Method of pedestal and common-mode noise correction for switched-capacitor analog memories

    DOE Patents [OSTI]

    Britton, Charles L. (Alcoa, TN)

    1996-01-01

    A method and apparatus for correcting common-mode noise and pedestal noise in a multichannel array of switched-capacitor analog memories wherein each analog memory is connected to an associated analog-to-digital converter. The apparatus comprises a single differential element in two different embodiments. In a first embodiment, the differential element is a reference analog memory connected to a buffer. In the second embodiment, the differential element is a reference analog memory connected to a reference analog-to-digital connected to an array of digital summing circuits.

  5. Method of pedestal and common-mode noise correction for switched-capacitor analog memories

    DOE Patents [OSTI]

    Britton, Charles L. (Alcoa, TN)

    1997-01-01

    A method and apparatus for correcting common-mode noise and pedestal noise in a multichannel array of switched-capacitor analog memories wherein each analog memory is connected to an associated analog-to-digital converter. The apparatus comprises a single differential element in two different embodiments. In a first embodiment, the differential element is a reference analog memory connected to a buffer. In the second embodiment, the differential dement is a reference analog memory connected to a reference analog-to-digital connected to an array of digital summing circuits.

  6. Rebuilding it Better: Greensburg, Kansas, Kiowa County Memorial Hospital (Brochure) (Revised)

    Broader source: Energy.gov [DOE]

    This brochure details the sustainable and green aspects of the LEED Platinum-designed Kiowa County Memorial Hospital in Greensburg, Kansas.

  7. Nanopatterned ferroelectrics for ultrahigh density rad-hard nonvolatile memories.

    SciTech Connect (OSTI)

    Brennecka, Geoffrey L.; Stevens, Jeffrey; Scrymgeour, David; Gin, Aaron V.; Tuttle, Bruce Andrew

    2010-09-01

    Radiation hard nonvolatile random access memory (NVRAM) is a crucial component for DOE and DOD surveillance and defense applications. NVRAMs based upon ferroelectric materials (also known as FERAMs) are proven to work in radiation-rich environments and inherently require less power than many other NVRAM technologies. However, fabrication and integration challenges have led to state-of-the-art FERAMs still being fabricated using a 130nm process while competing phase-change memory (PRAM) has been demonstrated with a 20nm process. Use of block copolymer lithography is a promising approach to patterning at the sub-32nm scale, but is currently limited to self-assembly directly on Si or SiO{sub 2} layers. Successful integration of ferroelectrics with discrete and addressable features of {approx}15-20nm would represent a 100-fold improvement in areal memory density and would enable more highly integrated electronic devices required for systems advances. Towards this end, we have developed a technique that allows us to carry out block copolymer self-assembly directly on a huge variety of different materials and have investigated the fabrication, integration, and characterization of electroceramic materials - primarily focused on solution-derived ferroelectrics - with discrete features of {approx}20nm and below. Significant challenges remain before such techniques will be capable of fabricating fully integrated NVRAM devices, but the tools developed for this effort are already finding broader use. This report introduces the nanopatterned NVRAM device concept as a mechanism for motivating the subsequent studies, but the bulk of the document will focus on the platform and technology development.

  8. Characterization of shape memory alloys for safety mechanisms.

    SciTech Connect (OSTI)

    McLaughlin, Jarred T.; Buchheit, Thomas Edward; Massad, Jordan Elias

    2008-03-01

    Shape memory alloys (SMAs) are metals that exhibit large recoverable strains and exert large forces with tremendous energy densities. The behavior of SMAs is thermomechanically coupled. Their response to temperature is sensitive to their loading condition and their response to loading is sensitive to their thermal condition. This coupled behavior is not to be circumvented, but to be confronted and understood, since it is what manifests SMA's superior clamping performance. To reasonably characterize the coupled behavior of SMA clamping rings used in safety mechanisms, we conduct a series of experiments on SMA samples. The results of the tests will allow increased fidelity in modeling and failure analysis of parts.

  9. Shape memory alloy heat engines and energy harvesting systems

    DOE Patents [OSTI]

    Browne, Alan L; Johnson, Nancy L; Keefe, Andrew C; Alexander, Paul W; Sarosi, Peter Maxwell; Herrera, Guillermo A; Yates, James Ryan

    2013-12-17

    A heat engine includes a first rotatable pulley and a second rotatable pulled spaced from the first rotatable pulley. A shape memory alloy (SMA) element is disposed about respective portions of the pulleys at an SMA pulley ratio. The SMA element includes first spring coil and a first fiber core within the first spring coil. A timing cable is disposed about disposed about respective portions of the pulleys at a timing pulley ratio, which is different than the SMA pulley ratio. The SMA element converts a thermal energy gradient between the hot region and the cold region into mechanical energy.

  10. Memory alloy heat engine and method of operation

    DOE Patents [OSTI]

    Johnson, Alfred Davis

    1977-01-01

    A heat engine and method of operation employing an alloy having a shape memory effect. A memory alloy element such as one or more wire loops are cyclically moved through a heat source, along a path toward a heat sink, through the heat sink and then along another path in counter-flow heat exchange relationship with the wire in the first path. The portion of the wire along the first path is caused to elongate to its trained length under minimum tension as it is cooled. The portion of the wire along the second path is caused to contract under maximum tension as it is heated. The resultant tension differential between the wires in the two paths is applied as a force through a distance to produce mechanical work. In one embodiment a first set of endless memory alloy wires are reeved in non-slip engagement between a pair of pulleys which are mounted for conjoint rotation within respective hot and cold reservoirs. Another set of endless memory alloy wires are reeved in non-slip engagement about another pair of pulleys which are mounted in the respective hot and cold reservoirs. The pulleys in the cold reservoir are of a larger diameter than those in the hot reservoir and the opposite reaches of the wires between the two sets of pulleys extend in closely spaced-apart relationship in counter-flow heat regenerator zones. The pulleys are turned to move the two sets of wires in opposite directions. The wires are stretched as they are cooled upon movement through the heat regenerator toward the cold reservoirs, and the wires contract as they are heated upon movement through the regenerator zones toward the hot reservoir. This contraction of wires exerts a larger torque on the greater diameter pulleys for turning the pulleys and supplying mechanical power. Means is provided for applying a variable tension to the wires. Phase change means is provided for controlling the angular phase of the pulleys of each set for purposes of start up procedure as well as for optimizing engine operation under varying conditions of load, speed and temperatures.

  11. Content-addressable memory based enforcement of configurable policies

    DOE Patents [OSTI]

    Berg, Michael J

    2014-05-06

    A monitoring device for monitoring transactions on a bus includes content-addressable memory ("CAM") and a response policy unit. The CAM includes an input coupled to receive a bus transaction tag based on bus traffic on the bus. The CAM stores data tags associated with rules of a security policy to compare the bus transaction tag to the data tags. The CAM generates an output signal indicating whether one or more matches occurred. The response policy unit is coupled to the CAM to receive the output signal from the CAM and to execute a policy action in response to the output signal.

  12. Memorandum Memorializing Ex Parte Communication | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    December 10, 2010, staff of the Air-Conditioning, Heating and Refrigeration Institute (AHRI) met with staff of the U.S. Department of Energy (DOE) to discuss the amount of time AHRI, as a third party reporting agency for manufacturers of commercial products, will need for compliance with the reporting requirements for commercial HVAC equipment and water heaters to be set forth in the pending final rule in Docket No. EERE-2010-BT-CE-0014/RIN 1904-AC23. PDF icon Memorandum Memorializing Ex Parte

  13. A garbage collection algorithm for shared memory parallel processors

    SciTech Connect (OSTI)

    Crammond, J. )

    1988-12-01

    This paper describes a technique for adapting the Morris sliding garbage collection algorithm to execute on parallel machines with shared memory. The algorithm is described within the framework of an implementation of the parallel logic language Parlog. However, the algorithm is a general one and can easily be adapted to parallel Prolog systems and to other languages. The performance of the algorithm executing a few simple Parlog benchmarks is analyzed. Finally, it is shown how the technique for parallelizing the sequential algorithm can be adapted for a semi-space copying algorithm.

  14. Electrical performance of phase change memory cells with Ge{sub 3}Sb{sub 2}Te{sub 6} deposited by molecular beam epitaxy

    SciTech Connect (OSTI)

    Boschker, Jos E.; Riechert, Henning; Calarco, Raffaella; Boniardi, Mattia; Redaelli, Andrea

    2015-01-12

    Here, we report on the electrical characterization of phase change memory cells containing a Ge{sub 3}Sb{sub 2}Te{sub 6} (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80–150?nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles.

  15. Shape memory polymers based on uniform aliphatic urethane networks

    SciTech Connect (OSTI)

    Wilson, T S; Bearinger, J P; Herberg, J L; Marion III, J E; Wright, W J; Evans, C L; Maitland, D J

    2007-01-19

    Aliphatic urethane polymers have been synthesized and characterized, using monomers with high molecular symmetry, in order to form amorphous networks with very uniform supermolecular structures which can be used as photo-thermally actuable shape memory polymers (SMPs). The monomers used include hexamethylene diisocyanate (HDI), trimethylhexamethylenediamine (TMHDI), N,N,N{prime},N{prime}-tetrakis(hydroxypropyl)ethylenediamine (HPED), triethanolamine (TEA), and 1,3-butanediol (BD). The new polymers were characterized by solvent extraction, NMR, XPS, UV/VIS, DSC, DMTA, and tensile testing. The resulting polymers were found to be single phase amorphous networks with very high gel fraction, excellent optical clarity, and extremely sharp single glass transitions in the range of 34 to 153 C. Thermomechanical testing of these materials confirms their excellent shape memory behavior, high recovery force, and low mechanical hysteresis (especially on multiple cycles), effectively behaving as ideal elastomers above T{sub g}. We believe these materials represent a new and potentially important class of SMPs, and should be especially useful in applications such as biomedical microdevices.

  16. Multi-Level Bitmap Indexes for Flash Memory Storage

    SciTech Connect (OSTI)

    Wu, Kesheng; Madduri, Kamesh; Canon, Shane

    2010-07-23

    Due to their low access latency, high read speed, and power-efficient operation, flash memory storage devices are rapidly emerging as an attractive alternative to traditional magnetic storage devices. However, tests show that the most efficient indexing methods are not able to take advantage of the flash memory storage devices. In this paper, we present a set of multi-level bitmap indexes that can effectively take advantage of flash storage devices. These indexing methods use coarsely binned indexes to answer queries approximately, and then use finely binned indexes to refine the answers. Our new methods read significantly lower volumes of data at the expense of an increased disk access count, thus taking full advantage of the improved read speed and low access latency of flash devices. To demonstrate the advantage of these new indexes, we measure their performance on a number of storage systems using a standard data warehousing benchmark called the Set Query Benchmark. We observe that multi-level strategies on flash drives are up to 3 times faster than traditional indexing strategies on magnetic disk drives.

  17. CX-003498: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Oklahoma State Energy Program American Recovery and Reinvestment Act - Newman Memorial HospitalCX(s) Applied: B1.4, B2.1, B5.1Date: 08/17/2010Location(s): Shattuck, OklahomaOffice(s): Energy Efficiency and Renewable Energy, Golden Field Office

  18. CX-004315: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Commercial Renewable Energy Systems - Cannon Memorial Young Men's Christian Association Solar ThermalCX(s) Applied: A9, B1.5, B1.31, B2.2, B5.1Date: 11/01/2010Location(s): Kannapolis, North CarolinaOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

  19. Cache directory look-up re-use as conflict check mechanism for speculative memory requests

    DOE Patents [OSTI]

    Ohmacht, Martin

    2013-09-10

    In a cache memory, energy and other efficiencies can be realized by saving a result of a cache directory lookup for sequential accesses to a same memory address. Where the cache is a point of coherence for speculative execution in a multiprocessor system, with directory lookups serving as the point of conflict detection, such saving becomes particularly advantageous.

  20. RTDB: A memory resident real-time object database

    SciTech Connect (OSTI)

    Jerzy M. Nogiec; Eugene Desavouret

    2003-06-04

    RTDB is a fast, memory-resident object database with built-in support for distribution. It constitutes an attractive alternative for architecting real-time solutions with multiple, possibly distributed, processes or agents sharing data. RTDB offers both direct and navigational access to stored objects, with local and remote random access by object identifiers, and immediate direct access via object indices. The database supports transparent access to objects stored in multiple collaborating dispersed databases and includes a built-in cache mechanism that allows for keeping local copies of remote objects, with specifiable invalidation deadlines. Additional features of RTDB include a trigger mechanism on objects that allows for issuing events or activating handlers when objects are accessed or modified and a very fast, attribute based search/query mechanism. The overall architecture and application of RTDB in a control and monitoring system is presented.

  1. Preparation of transparent conductors ferroelectric memory materials and ferrites

    DOE Patents [OSTI]

    Bhattacharya, R.N.; Ginley, D.S.

    1998-07-28

    A process is described for the preparation by electrodeposition of metal oxide film and powder compounds for ferroelectric memory materials and ferrites wherein the metal oxide includes a plurality of metals. The process comprises providing an electrodeposition bath, providing soluble salts of the metals to this bath, electrically energizing the bath to thereby cause formation of a recoverable film of metal on the electrode, recovering the resultant film as a film or a powder, and recovering powder formed on the floor of the bath. The films and powders so produced are subsequently annealed to thereby produce metal oxide for use in electronic applications. The process can be employed to produce metal-doped metal oxide film and powder compounds for transparent conductors. The process for preparation of these metal-doped metal oxides follows that described above.

  2. Shape memory alloy heat engines and energy harvesting systems

    DOE Patents [OSTI]

    Browne, Alan L; Johnson, Nancy L; Shaw, John Andrew; Churchill, Christopher Burton; Keefe, Andrew C; McKnight, Geoffrey P; Alexander, Paul W; Herrera, Guillermo A; Yates, James Ryan; Brown, Jeffrey W

    2014-09-30

    A heat engine includes a first rotatable pulley and a second rotatable pulley spaced from the first rotatable pulley. A shape memory alloy (SMA) element is disposed about respective portions of the pulleys at an SMA pulley ratio. The SMA element includes a first wire, a second wire, and a matrix joining the first wire and the second wire. The first wire and the second wire are in contact with the pulleys, but the matrix is not in contact with the pulleys. A timing cable is disposed about respective portions of the pulleys at a timing pulley ratio, which is different than the SMA pulley ratio. The SMA element converts a thermal energy gradient between the hot region and the cold region into mechanical energy.

  3. Preparation of transparent conductors ferroelectric memory materials and ferrites

    DOE Patents [OSTI]

    Bhattacharya, Raghu Nath; Ginley, David S.

    1998-01-01

    A process for the preparation by electrodeposition of metal oxide film and powder compounds for ferroelectric memory materials and ferrites wherein the metal oxide includes a plurality of metals. The process comprises providing an electrodeposition bath, providing soluble salts of the metals to this bath, electrically energizing the bath to thereby cause formation of a recoverable film of metal on the electrode, recovering the resultant film as a film or a powder, and recovering powder formed on the floor of the bath. The films and powders so produced are subsequently annealed to thereby produce metal oxide for use in electronic applications. The process can be employed to produce metal-doped metal oxide film and powder compounds for transparent conductors. The process for preparation of these metal-doped metal oxides follows that described above.

  4. Metal-organic molecular device for non-volatile memory storage

    SciTech Connect (OSTI)

    Radha, B., E-mail: radha.boya@manchester.ac.uk, E-mail: kulkarni@jncasr.ac.in; Sagade, Abhay A.; Kulkarni, G. U., E-mail: radha.boya@manchester.ac.uk, E-mail: kulkarni@jncasr.ac.in [Chemistry and Physics of Materials Unit and DST Unit on Nanoscience, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P.O., Bangalore 560064 (India)

    2014-08-25

    Non-volatile memory devices have been of immense research interest for their use in active memory storage in powered off-state of electronic chips. In literature, various molecules and metal compounds have been investigated in this regard. Molecular memory devices are particularly attractive as they offer the ease of storing multiple memory states in a unique way and also represent ubiquitous choice for miniaturized devices. However, molecules are fragile and thus the device breakdown at nominal voltages during repeated cycles hinders their practical applicability. Here, in this report, a synergetic combination of an organic molecule and an inorganic metal, i.e., a metal-organic complex, namely, palladium hexadecylthiolate is investigated for memory device characteristics. Palladium hexadecylthiolate following partial thermolysis is converted to a molecular nanocomposite of Pd(II), Pd(0), and long chain hydrocarbons, which is shown to exhibit non-volatile memory characteristics with exceptional stability and retention. The devices are all solution-processed and the memory action stems from filament formation across the pre-formed cracks in the nanocomposite film.

  5. Enhanced memory effect with embedded graphene nanoplatelets in ZnO charge trapping layer

    SciTech Connect (OSTI)

    El-Atab, Nazek; Nayfeh, Ammar; Cimen, Furkan; Alkis, Sabri; Okyay, Ali K.

    2014-07-21

    A charge trapping memory with graphene nanoplatelets embedded in atomic layer deposited ZnO (GNIZ) is demonstrated. The memory shows a large threshold voltage V{sub t} shift (4?V) at low operating voltage (6/?6?V), good retention (>10 yr), and good endurance characteristic (>10{sup 4} cycles). This memory performance is compared to control devices with graphene nanoplatelets (or ZnO) and a thicker tunnel oxide. These structures showed a reduced V{sub t} shift and retention characteristic. The GNIZ structure allows for scaling down the tunnel oxide thickness along with improving the memory window and retention of data. The larger V{sub t} shift indicates that the ZnO adds available trap states and enhances the emission and retention of charges. The charge emission mechanism in the memory structures with graphene nanoplatelets at an electric field E???5.57 MV/cm is found to be based on Fowler-Nordheim tunneling. The fabrication of this memory device is compatible with current semiconductor processing, therefore, has great potential in low-cost nano-memory applications.

  6. Reprogrammable read only variable threshold transistor memory with isolated addressing buffer

    DOE Patents [OSTI]

    Lodi, Robert J.

    1976-01-01

    A monolithic integrated circuit, fully decoded memory comprises a rectangular array of variable threshold field effect transistors organized into a plurality of multi-bit words. Binary address inputs to the memory are decoded by a field effect transistor decoder into a plurality of word selection lines each of which activates an address buffer circuit. Each address buffer circuit, in turn, drives a word line of the memory array. In accordance with the word line selected by the decoder the activated buffer circuit directs reading or writing voltages to the transistors comprising the memory words. All of the buffer circuits additionally are connected to a common terminal for clearing all of the memory transistors to a predetermined state by the application to the common terminal of a large magnitude voltage of a predetermined polarity. The address decoder, the buffer and the memory array, as well as control and input/output control and buffer field effect transistor circuits, are fabricated on a common substrate with means provided to isolate the substrate of the address buffer transistors from the remainder of the substrate so that the bulk clearing function of simultaneously placing all of the memory transistors into a predetermined state can be performed.

  7. Improving Memory Subsystem Performance Using ViVA: Virtual Vector Architecture

    SciTech Connect (OSTI)

    Gebis, Joseph; Oliker, Leonid; Shalf, John; Williams, Samuel; Yelick, Katherine

    2009-01-12

    The disparity between microprocessor clock frequencies and memory latency is a primary reason why many demanding applications run well below peak achievable performance. Software controlled scratchpad memories, such as the Cell local store, attempt to ameliorate this discrepancy by enabling precise control over memory movement; however, scratchpad technology confronts the programmer and compiler with an unfamiliar and difficult programming model. In this work, we present the Virtual Vector Architecture (ViVA), which combines the memory semantics of vector computers with a software-controlled scratchpad memory in order to provide a more effective and practical approach to latency hiding. ViVA requires minimal changes to the core design and could thus be easily integrated with conventional processor cores. To validate our approach, we implemented ViVA on the Mambo cycle-accurate full system simulator, which was carefully calibrated to match the performance on our underlying PowerPC Apple G5 architecture. Results show that ViVA is able to deliver significant performance benefits over scalar techniques for a variety of memory access patterns as well as two important memory-bound compact kernels, corner turn and sparse matrix-vector multiplication -- achieving 2x-13x improvement compared the scalar version. Overall, our preliminary ViVA exploration points to a promising approach for improving application performance on leading microprocessors with minimal design and complexity costs, in a power efficient manner.

  8. Temperature determination using pyrometry

    DOE Patents [OSTI]

    Breiland, William G.; Gurary, Alexander I.; Boguslavskiy, Vadim

    2002-01-01

    A method for determining the temperature of a surface upon which a coating is grown using optical pyrometry by correcting Kirchhoff's law for errors in the emissivity or reflectance measurements associated with the growth of the coating and subsequent changes in the surface thermal emission and heat transfer characteristics. By a calibration process that can be carried out in situ in the chamber where the coating process occurs, an error calibration parameter can be determined that allows more precise determination of the temperature of the surface using optical pyrometry systems. The calibration process needs only to be carried out when the physical characteristics of the coating chamber change.

  9. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

    SciTech Connect (OSTI)

    Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong

    2014-10-20

    High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

  10. Effects of aging on the characteristics of TiNiPd shape memory alloy thin films

    SciTech Connect (OSTI)

    Zhang Congchun

    2008-07-15

    TiNiPd thin films have been deposited on glass substrate using R.F. magnetron sputtering. Effects of annealing and aging on the microstructure, phase transformation behaviors and shape memory effects of these thin films have been studied by X-ray diffractometry, differential scanning calorimeter, tensile tests and internal friction characteristics. The TiNiPd thin films annealed at 750 deg. C exhibit uniform martensite/austenite transformations and shape memory effect. Aging at 450 deg. C for 1 h improved the uniformity of transformations and shape memory effect. Long time aging decreased transformation temperatures and increased the brittleness of TiNiPd thin films.

  11. Functionally grading the shape memory response in NiTi films: Laser irradiation

    SciTech Connect (OSTI)

    Birnbaum, A. J.; Satoh, G.; Yao, Y. L.

    2009-08-15

    A new process and mechanism are presented for controlling the shape memory response spatially within monolithic NiTi thin film structures. This technique is shown to effectively control the martensitic phase transformation temperature and exhibits control over aspects of the mechanical and shape memory responses as well. Specifically, the martensitic phase transformation temperature decreases with incident laser energy density. Concomitant modifications are observed in both the mechanical and shape memory responses in laser processed films. Analysis and characterization are performed via temperature controlled optical microscopy, x-ray diffraction, atomic force microscopy, and nanoindentation.

  12. High speed, very large (8 megabyte) first in/first out buffer memory (FIFO)

    DOE Patents [OSTI]

    Baumbaugh, Alan E.; Knickerbocker, Kelly L.

    1989-01-01

    A fast FIFO (First In First Out) memory buffer capable of storing data at rates of 100 megabytes per second. The invention includes a data packer which concatenates small bit data words into large bit data words, a memory array having individual data storage addresses adapted to store the large bit data words, a data unpacker into which large bit data words from the array can be read and reconstructed into small bit data words, and a controller to control and keep track of the individual data storage addresses in the memory array into which data from the packer is being written and data to the unpacker is being read.

  13. Making Memorial Day Plans? Be Sure They're Efficient | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Memorial Day Plans? Be Sure They're Efficient Making Memorial Day Plans? Be Sure They're Efficient May 27, 2011 - 4:15pm Addthis Allison Casey Senior Communicator, NREL Editor's note: This is a cross-post from the Energy Savers blog. There are many ways to honor the men and women who died in service to our country this Memorial Day. You may be planning to attend a parade or ceremony, or maybe you're just planning to take a moment of silence to reflect and remember. Many Americans also choose to

  14. Role of B19' martensite deformation in stabilizing two-way shape memory

    Office of Scientific and Technical Information (OSTI)

    behavior in NiTi (Journal Article) | DOE PAGES Role of B19' martensite deformation in stabilizing two-way shape memory behavior in NiTi « Prev Next » Title: Role of B19' martensite deformation in stabilizing two-way shape memory behavior in NiTi Deformation of a B19' martensitic, polycrystallineNi49.9Ti50.1 (at. %) shape memoryalloy and its influence on the magnitude and stability of the ensuing two-way shape memory effect (TWSME) was investigated by combined ex situ mechanical

  15. Deadlock during first touch of upc_alloc'd remote memory when target is in

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    upc_barrier [updated] Reports » Deadlock during first touch of upc_alloc'd remote memory when target is in upc_barrier Deadlock during first touch of upc_alloc'd remote memory when target is in upc_barrier [updated] October 16, 2014 Status: This has been reported to Cray (811537) and a workaround is available. Fixed in CCE 8.3.5. When a UPC thread first attempts to access a shared memory location that has been allocated with upc_alloc() and the resulting pointer stored to a shared variable,

  16. Making Memorial Day Plans? Be Sure They're Efficient | Department of Energy

    Energy Savers [EERE]

    Memorial Day Plans? Be Sure They're Efficient Making Memorial Day Plans? Be Sure They're Efficient May 17, 2011 - 11:11am Addthis Allison Casey Senior Communicator, NREL Memorial Day is coming up and there are many ways to honor the men and women who died in service to our country. You may be planning to attend a parade or ceremony, or maybe you're just planning to take a moment of silence to reflect and remember. Along with these excellent community activities, many Americans also choose to

  17. NEPA Determination Complete

    Broader source: Energy.gov [DOE]

    DOE has determined that this proposed project is a major Federal action that may significantly affect the quality of the human environment. To comply with the National Environmental Policy Act ...

  18. Solids mass flow determination

    DOE Patents [OSTI]

    Macko, Joseph E. (Hempfield Township, Westmoreland County, PA)

    1981-01-01

    Method and apparatus for determining the mass flow rate of solids mixed with a transport fluid to form a flowing mixture. A temperature differential is established between the solids and fluid. The temperature of the transport fluid prior to mixing, the temperature of the solids prior to mixing, and the equilibrium temperature of the mixture are monitored and correlated in a heat balance with the heat capacities of the solids and fluid to determine the solids mass flow rate.

  19. Near-infrared noninvasive spectroscopic determination of pH

    DOE Patents [OSTI]

    Alam, Mary K. (P.O. Box 1083, Cedar Crest, NM 87008); Robinson, Mark R. (1415 Calle del Ranchero NE, Albuquerque, NM 87106)

    1998-08-11

    Methods and apparatus for, preferably, determining noninvasively and in vitro pH in a human. The non-invasive method includes the steps of: generating light at three or more different wavelengths in the range of 1000 nm to 2500 nm; irradiating blood containing tissue; measuring the intensities of the wavelengths emerging from the blood containing tissue to obtain a set of at least three spectral intensities v. wavelengths; and determining the unknown values of pH. The determination of pH is made by using measured intensities at wavelengths that exhibit change in absorbance due to histidine titration. Histidine absorbance changes are due to titration by hydrogen ions. The determination of the unknown pH values is performed by at least one multivariate algorithm using two or more variables and at least one calibration model. The determined pH values are within the physiological ranges observed in blood containing tissue. The apparatus includes a tissue positioning device, a source, at least one detector, electronics, a microprocessor, memory, and apparatus for indicating the determined values.

  20. Nonvolatile memory behavior of nanocrystalline cellulose/graphene oxide composite films

    SciTech Connect (OSTI)

    Valentini, L. Cardinali, M.; Fortunati, E.; Kenny, J. M.

    2014-10-13

    With the continuous advance of modern electronics, the demand for nonvolatile memory cells rapidly grows. In order to develop post-silicon electronic devices, it is necessary to find innovative solutions to the eco-sustainability problem of materials for nonvolatile memory cells. In this work, we realized a resistive memory device based on graphene oxide (GO) and GO/cellulose nanocrystals (CNC) thin films. Aqueous solutions of GO and GO with CNC have been prepared and drop cast between two metal electrodes. Such thin-film based devices showed a transition between low and high conductivity states upon the forward and backward sweeping of an external electric field. This reversible current density transition behavior demonstrates a typical memory characteristic. The obtained results open an easy route for electronic information storage based on the integration of nanocrystalline cellulose onto graphene based devices.

  1. V-228: RealPlayer Buffer Overflow and Memory Corruption Error...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    V-228: RealPlayer Buffer Overflow and Memory Corruption Error Let Remote Users Execute ... Lets Remote Users Execute Arbitrary Code V-049: RealPlayer Buffer Overflow and Invalid ...

  2. Radioactive material package closures with the use of shape memory alloys

    SciTech Connect (OSTI)

    Koski, J.A.; Bronowski, D.R.

    1997-11-01

    When heated from room temperature to 165 C, some shape memory metal alloys such as titanium-nickel alloys have the ability to return to a previously defined shape or size with dimensional changes up to 7%. In contrast, the thermal expansion of most metals over this temperature range is about 0.1 to 0.2%. The dimension change of shape memory alloys, which occurs during a martensite to austenite phase transition, can generate stresses as high as 700 MPa (100 kspi). These properties can be used to create a closure for radioactive materials packages that provides for easy robotic or manual operations and results in reproducible, tamper-proof seals. This paper describes some proposed closure methods with shape memory alloys for radioactive material packages. Properties of the shape memory alloys are first summarized, then some possible alternative sealing methods discussed, and, finally, results from an initial proof-of-concept experiment described.

  3. Post polymerization cure shape memory polymers (Patent) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Post polymerization cure shape memory polymers Citation Details In-Document Search Title: Post polymerization cure shape memory polymers Ă— You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional information resources in energy science and technology. A paper copy of this document is also available for sale to the

  4. Unoccupied electronic structure of Ni2MnGa ferromagnetic shape memory alloy

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Unoccupied electronic structure of Ni2MnGa ferromagnetic shape memory alloy Citation Details In-Document Search This content will become publicly available on August 20, 2016 Title: Unoccupied electronic structure of Ni2MnGa ferromagnetic shape memory alloy Momentum resolved inverse photoemission spectroscopy measurements show that the dispersion of the unoccupied bands of Ni2MnGa is significant in the austenite phase. Furthermore, in the martensite phase,

  5. Aging and deaging effects in shape memory alloys (Journal Article) | DOE

    Office of Scientific and Technical Information (OSTI)

    PAGES Aging and deaging effects in shape memory alloys Title: Aging and deaging effects in shape memory alloys Authors: Xue, Dezhen ; Zhou, Yumei ; Ding, Xiangdong ; Lookman, Turab ; Sun, Jun ; Ren, Xiaobing Publication Date: 2012-11-26 OSTI Identifier: 1101816 Type: Publisher's Accepted Manuscript Journal Name: Physical Review B Additional Journal Information: Journal Volume: 86; Journal Issue: 18; Journal ID: ISSN 1098-0121 Publisher: American Physical Society Sponsoring Org: USDOE Country

  6. High-Performance Computation of Distributed-Memory Parallel 3D Voronoi and

    Office of Scientific and Technical Information (OSTI)

    Delaunay Tessellation (Conference) | SciTech Connect SciTech Connect Search Results Conference: High-Performance Computation of Distributed-Memory Parallel 3D Voronoi and Delaunay Tessellation Citation Details In-Document Search Title: High-Performance Computation of Distributed-Memory Parallel 3D Voronoi and Delaunay Tessellation Computing a Voronoi or Delaunay tessellation from a set of points is a core part of the analysis of many simulated and measured datasets: N-body simulations,

  7. Shape-memory transformations of NiTi: Minimum-energy pathways between

    Office of Scientific and Technical Information (OSTI)

    austenite, martensites, and kinetically limited intermediate states (Journal Article) | SciTech Connect Shape-memory transformations of NiTi: Minimum-energy pathways between austenite, martensites, and kinetically limited intermediate states Citation Details In-Document Search Title: Shape-memory transformations of NiTi: Minimum-energy pathways between austenite, martensites, and kinetically limited intermediate states Ă— You are accessing a document from the Department of Energy's (DOE)

  8. Apparatus for loading shape memory gripper mechanisms (Patent) | SciTech

    Office of Scientific and Technical Information (OSTI)

    Connect Apparatus for loading shape memory gripper mechanisms Citation Details In-Document Search Title: Apparatus for loading shape memory gripper mechanisms Ă— You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional information resources in energy science and technology. A paper copy of this document is also

  9. DOE Science Showcase: Shape-Memory Materials | OSTI, US Dept of Energy,

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Office of Scientific and Technical Information Science Showcase: Shape-Memory Materials A new plastic transforms from its original shape (left) through a series of temporary shapes and returns to its initial form. A new plastic transforms from its original shape (left) through a series of temporary shapes and returns to its initial form. Image credit: Oak Ridge National Laboratory Shape-memory materials have the ability to be transformed into another shape and then return to their original

  10. Weldability of Advanced Shape Memory Alloys. (Conference) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Conference: Weldability of Advanced Shape Memory Alloys. Citation Details In-Document Search Title: Weldability of Advanced Shape Memory Alloys. Abstract not provided. Authors: Rodelas, Jeffrey Publication Date: 2014-10-01 OSTI Identifier: 1241842 Report Number(s): SAND2014-18604C 540406 DOE Contract Number: AC04-94AL85000 Resource Type: Conference Resource Relation: Conference: Proposed for presentation at the Material Science & Technology 2014 held October 13-16, 2014 in Pittsburgh, PA.

  11. Memristive behavior in a junctionless flash memory cell

    SciTech Connect (OSTI)

    Orak, Ikram; Ürel, Mustafa; Dana, Aykutlu; Bakan, Gokhan

    2015-06-08

    We report charge storage based memristive operation of a junctionless thin film flash memory cell when it is operated as a two terminal device by grounding the gate. Unlike memristors based on nanoionics, the presented device mode, which we refer to as the flashristor mode, potentially allows greater control over the memristive properties, allowing rational design. The mode is demonstrated using a depletion type n-channel ZnO transistor grown by atomic layer deposition (ALD), with HfO{sub 2} as the tunnel dielectric, Al{sub 2}O{sub 3} as the control dielectric, and non-stoichiometric silicon nitride as the charge storage layer. The device exhibits the pinched hysteresis of a memristor and in the unoptimized device, R{sub off}/R{sub on} ratios of about 3 are presented with low operating voltages below 5?V. A simplified model predicts R{sub off}/R{sub on} ratios can be improved significantly by adjusting the native threshold voltage of the devices. The repeatability of the resistive switching is excellent and devices exhibit 10{sup 6?}s retention time, which can, in principle, be improved by engineering the gate stack and storage layer properties. The flashristor mode can find use in analog information processing applications, such as neuromorphic computing, where well-behaving and highly repeatable memristive properties are desirable.

  12. In-Memory Graph Databases for Web-Scale Data

    SciTech Connect (OSTI)

    Castellana, Vito G.; Morari, Alessandro; Weaver, Jesse R.; Tumeo, Antonino; Haglin, David J.; Villa, Oreste; Feo, John

    2015-03-01

    RDF databases have emerged as one of the most relevant way for organizing, integrating, and managing expo- nentially growing, often heterogeneous, and not rigidly structured data for a variety of scientific and commercial fields. In this paper we discuss the solutions integrated in GEMS (Graph database Engine for Multithreaded Systems), a software framework for implementing RDF databases on commodity, distributed-memory high-performance clusters. Unlike the majority of current RDF databases, GEMS has been designed from the ground up to primarily employ graph-based methods. This is reflected in all the layers of its stack. The GEMS framework is composed of: a SPARQL-to-C++ compiler, a library of data structures and related methods to access and modify them, and a custom runtime providing lightweight software multithreading, network messages aggregation and a partitioned global address space. We provide an overview of the framework, detailing its component and how they have been closely designed and customized to address issues of graph methods applied to large-scale datasets on clusters. We discuss in details the principles that enable automatic translation of the queries (expressed in SPARQL, the query language of choice for RDF databases) to graph methods, and identify differences with respect to other RDF databases.

  13. Micro devices using shape memory polymer patches for mated connections

    DOE Patents [OSTI]

    Lee, Abraham P.; Fitch, Joseph P.

    2000-01-01

    A method and micro device for repositioning or retrieving miniature devices located in inaccessible areas, such as medical devices (e.g., stents, embolic coils, etc.) located in a blood vessel. The micro repositioning or retrieving device and method uses shape memory polymer (SMP) patches formed into mating geometries (e.g., a hoop and a hook) for re-attachment of the deposited medical device to a catheter or guidewire. For example, SMP or other material hoops are formed on the medical device to be deposited in a blood vessel, and SMP hooks are formed on the micro device attached to a guidewire, whereby the hooks on the micro device attach to the hoops on the medical device, or vice versa, enabling deposition, movement, re-deposit, or retrieval of the medical device. By changing the temperature of the SMP hooks, the hooks can be attached to or released from the hoops located on the medical device. An exemplary method for forming the hooks and hoops involves depositing a sacrificial thin film on a substrate, patterning and processing the thin film to form openings therethrough, depositing or bonding SMP materials in the openings so as to be attached to the substrate, and removing the sacrificial thin film.

  14. Categorical Exclusion Determinations: Environmental Management...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Consolidated Business Service Center Categorical Exclusion Determinations: Environmental Management Consolidated Business Service Center Categorical Exclusion Determinations issued...

  15. Waste Determination Equivalency - 12172

    SciTech Connect (OSTI)

    Freeman, Rebecca D.

    2012-07-01

    The Savannah River Site (SRS) is a Department of Energy (DOE) facility encompassing approximately 800 square kilometers near Aiken, South Carolina which began operations in the 1950's with the mission to produce nuclear materials. The SRS contains fifty-one tanks (2 stabilized, 49 yet to be closed) distributed between two liquid radioactive waste storage facilities at SRS containing carbon steel underground tanks with storage capacities ranging from 2,800,000 to 4,900,000 liters. Treatment of the liquid waste from these tanks is essential both to closing older tanks and to maintaining space needed to treat the waste that is eventually vitrified or disposed of onsite. Section 3116 of the Ronald W. Reagan National Defense Authorization Act of Fiscal Year 2005 (NDAA) provides the Secretary of Energy, in consultation with the Nuclear Regulatory Commission (NRC), a methodology to determine that certain waste resulting from prior reprocessing of spent nuclear fuel are not high-level radioactive waste if it can be demonstrated that the waste meets the criteria set forth in Section 3116(a) of the NDAA. The Secretary of Energy, in consultation with the NRC, signed a determination in January 2006, pursuant to Section 3116(a) of the NDAA, for salt waste disposal at the SRS Saltstone Disposal Facility. This determination is based, in part, on the Basis for Section 3116 Determination for Salt Waste Disposal at the Savannah River Site and supporting references, a document that describes the planned methods of liquid waste treatment and the resulting waste streams. The document provides descriptions of the proposed methods for processing salt waste, dividing them into 'Interim Salt Processing' and later processing through the Salt Waste Processing Facility (SWPF). Interim Salt Processing is separated into Deliquification, Dissolution, and Adjustment (DDA) and Actinide Removal Process/Caustic Side Solvent Extraction Unit (ARP/MCU). The Waste Determination was signed by the Secretary of Energy in January of 2006 based on proposed processing techniques with the expectation that it could be revised as new processing capabilities became viable. Once signed, however, it became evident that any changes would require lengthy review and another determination signed by the Secretary of Energy. With the maturation of additional salt removal technologies and the extension of the SWPF start-up date, it becomes necessary to define 'equivalency' to the processes laid out in the original determination. For the purposes of SRS, any waste not processed through Interim Salt Processing must be processed through SWPF or an equivalent process, and therefore a clear statement of the requirements for a process to be equivalent to SWPF becomes necessary. (authors)

  16. System for determining the type of nuclear radiation from detector output pulse shape

    DOE Patents [OSTI]

    Miller, William H.; Berliner, Ronald R.

    1994-01-01

    A radiation detection system determines the type of nuclear radiation received in a detector by producing a correlation value representative of the statistical cross correlation between the shape of the detector signal and pulse shape data previously stored in memory and characteristic of respective types of radiation. The correlation value is indicative of the type of radiation. The energy of the radiation is determined from the detector signal and is used to produce a spectrum of radiation energies according to radiation type for indicating the nature of the material producing the radiation.

  17. System for determining the type of nuclear radiation from detector output pulse shape

    DOE Patents [OSTI]

    Miller, W.H.; Berliner, R.R.

    1994-09-13

    A radiation detection system determines the type of nuclear radiation received in a detector by producing a correlation value representative of the statistical cross correlation between the shape of the detector signal and pulse shape data previously stored in memory and characteristic of respective types of radiation. The correlation value is indicative of the type of radiation. The energy of the radiation is determined from the detector signal and is used to produce a spectrum of radiation energies according to radiation type for indicating the nature of the material producing the radiation. 2 figs.

  18. Award Fee Determination Summary

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2 CH2M Hill Plateau Remediation Company Contract Number: DE-AC06-08RL14788 Final Fee Determination for Base funded Performance Measures Basis of Evaluation: Completion of Performance Measures contained in Section J, Attachment J.4, Performance Evaluation and Measurement Plan, according to the identified completion criteria. Evaluation Results: FY 2012 Base Period Fee Available Fee allocated to FY 2012* Performance Measures $10,399,033.60 Incremental Fee $4,490,000.00 Provisional Fee

  19. Award Fee Determination Summary

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1 CH2M Hill Plateau Remediation Company Contract Number: DE-AC06-08RL14788 Final Fee Determination for Base funded and American Recovery and Reinvestment Act (Recovery) funded Performance Measures Basis of Evaluation: Completion of Performance Measures contained in Section J, AttachmentJ.4, Performance Evaluation and Measurement Plan, according to the identified completion criteria. Evaluation Results: Fiscal Year 2011 (Oct 1, 2010 - Sept 30, 2011) Base Funded Fee Recovery Funded Fee Available

  20. Interim Action Determination

    Office of Environmental Management (EM)

    Interim Action Determination Processing of Plutonium Materials from the DOE Standard 3013 Surveillance Program in H-Canyon at the Savannah River Site The Department of Energy (DOE) is preparing the Surplus Plutonium Disposition Supplemental Environmental Impact Statement (SPD SEIS, DOE/EIS-0283-S2). DOE is evaluating alternatives for disposition of non-pit plutonium that is surplus to the national security needs of the United States. Although the Deputy Secretary of Energy approved Critical

  1. Intermediate photovoltaic system application experiment operational performance report. Volume 3. For G. N. Wilcox Memorial Hospital, Kauai, Hawaii

    SciTech Connect (OSTI)

    Not Available

    1982-09-01

    Presented are the project description, list of participants, and system specifications for the intermediate photovoltaic project at G.N. Wilcox Memorial Hospital, Kauai, Hawaii.

  2. A Low Hysteresis NiTiFe Shape Memory Alloy Based Thermal Conduction Switch

    SciTech Connect (OSTI)

    Lemanski, J. L.; Krishnan, V. B.; Manjeri, R. Mahadevan; Vaidyanathan, R.; Notardonato, W. U.

    2006-03-31

    Shape memory alloys possess the ability to return to a preset shape by undergoing a solid state phase transformation at a particular temperature. This work reports on the development and testing of a low temperature thermal conduction switch that incorporates a NiTiFe shape memory element for actuation. The switch was developed to provide a variable conductive pathway between liquid methane and liquid oxygen dewars in order to passively regulate the temperature of methane. The shape memory element in the switch undergoes a rhombohedral or R-phase transformation that is associated with a small hysteresis (typically 1-2 deg. C) and offers the advantage of precision control over a set temperature range. For the NiTiFe alloy used, its thermomechanical processing, subsequent characterization using dilatometry, differential scanning calorimetry and implementation in the conduction switch configuration are addressed.

  3. Fencing direct memory access data transfers in a parallel active messaging interface of a parallel computer

    DOE Patents [OSTI]

    Blocksome, Michael A.; Mamidala, Amith R.

    2013-09-03

    Fencing direct memory access (`DMA`) data transfers in a parallel active messaging interface (`PAMI`) of a parallel computer, the PAMI including data communications endpoints, each endpoint including specifications of a client, a context, and a task, the endpoints coupled for data communications through the PAMI and through DMA controllers operatively coupled to segments of shared random access memory through which the DMA controllers deliver data communications deterministically, including initiating execution through the PAMI of an ordered sequence of active DMA instructions for DMA data transfers between two endpoints, effecting deterministic DMA data transfers through a DMA controller and a segment of shared memory; and executing through the PAMI, with no FENCE accounting for DMA data transfers, an active FENCE instruction, the FENCE instruction completing execution only after completion of all DMA instructions initiated prior to execution of the FENCE instruction for DMA data transfers between the two endpoints.

  4. Fencing direct memory access data transfers in a parallel active messaging interface of a parallel computer

    DOE Patents [OSTI]

    Blocksome, Michael A; Mamidala, Amith R

    2014-02-11

    Fencing direct memory access (`DMA`) data transfers in a parallel active messaging interface (`PAMI`) of a parallel computer, the PAMI including data communications endpoints, each endpoint including specifications of a client, a context, and a task, the endpoints coupled for data communications through the PAMI and through DMA controllers operatively coupled to segments of shared random access memory through which the DMA controllers deliver data communications deterministically, including initiating execution through the PAMI of an ordered sequence of active DMA instructions for DMA data transfers between two endpoints, effecting deterministic DMA data transfers through a DMA controller and a segment of shared memory; and executing through the PAMI, with no FENCE accounting for DMA data transfers, an active FENCE instruction, the FENCE instruction completing execution only after completion of all DMA instructions initiated prior to execution of the FENCE instruction for DMA data transfers between the two endpoints.

  5. A new shared-memory programming paradigm for molecular dynamics simulations on the Intel Paragon

    SciTech Connect (OSTI)

    D`Azevedo, E.F.; Romine, C.H.

    1994-12-01

    This report describes the use of shared memory emulation with DOLIB (Distributed Object Library) to simplify parallel programming on the Intel Paragon. A molecular dynamics application is used as an example to illustrate the use of the DOLIB shared memory library. SOTON-PAR, a parallel molecular dynamics code with explicit message-passing using a Lennard-Jones 6-12 potential, is rewritten using DOLIB primitives. The resulting code has no explicit message primitives and resembles a serial code. The new code can perform dynamic load balancing and achieves better performance than the original parallel code with explicit message-passing.

  6. A prototype functional language implementation for hierarchical- memory architectures. Revision 1

    SciTech Connect (OSTI)

    Wolski, R.; Feo, J.; Cann, D.

    1992-01-14

    Programming languages are the most important tool at a programmers` disposal. All other tools correct, visualize, or evaluate the product crafted by this tool. The advent of multiprocessor computer systems has greatly complicated the programmer`s task an increased his need for high-level languages capable of automatically taming these architectures. In this paper, we describe a prototype implementation of Sisal for multiprocessor, hierarchical-memory systems. The implementation includes explicit compiler and runtime control that effectively exploits the different levels of memory and manages interprocess communications (IPC). We give preliminary performance results for this system on the BBN TC2000.

  7. An In Situ Study of the Martensitic Transformation in Shape Memory Alloys Using Photoemission Electron Microscopy

    SciTech Connect (OSTI)

    Cai, Mingdong; Langford, Stephen C.; Dickinson, J. T.; Xiong, Gang; Droubay, Timothy C.; Joly, Alan G.; Beck, Kenneth M.; Hess, Wayne P.

    2007-04-15

    Thermally-induced martensitic phase transformations in polycrystalline CuZnAl and thin-film NiTiCu shape memory alloys were probed using photoemission electron microscopy (PEEM). Ultra-violet photoelectron spectroscopy shows a reversible change in the apparent work function during transformation, presumably due to the contrasting surface electronic structures of the martensite and austenite phases. In situ PEEM images provide information on the spatial distribution of these phases and the evolution of the surface microstructure during transformation. PEEM offers considerable potential for improving our understanding of martensitic transformations in shape memory alloys in real time.

  8. A micro-compression study of shape-memory deformation in U-13at%Nb

    SciTech Connect (OSTI)

    Clarke, Amy J; Field, Robert D; Dickerson, Patricia O; Mccabe, Rodney J

    2008-01-01

    Micro-compression specimens, 1O-15{mu}m in diameter by 20-30{mu}m in height, were produced from individual parent grains in a polycrystalline U-13at%Nb shape-memory alloy using the focused ion beam (FIB) technique. The specimens were tested in a nanoindentation instrument with a flat diamond tip to investigate stress-strain behavior as a function of crystallographic orientation. The results are in qualitative agreement with a single-crystal accommodation strain (Bain strain) model of the shape-memory effect for this alloy.

  9. Direct evidence of detwinning in polycrystalline Ni-Mn-Ga ferromagnetic shape memory alloys during deformation.

    SciTech Connect (OSTI)

    Nie, Z. H.; Lin Peng, R.; Johansson, S.; Oliver, E. C.; Ren, Y.; Wang, Y. D.; Liu, Y. D.; Deng, J. N.; Zuo, L.; Brown, D. E.; Northwestern Univ., China; Linkoping Univ.; Rutherford Appleton Lab.; Northern Illinois Univ.

    2008-01-01

    In situ time-of-flight neutron diffraction and high-energy x-ray diffraction techniques were used to reveal the preferred reselection of martensite variants through a detwinning process in polycrystalline Ni-Mn-Ga ferromagnetic shape memory alloys under uniaxial compressive stress. The variant reorientation via detwinning during loading can be explained by considering the influence of external stress on the grain/variant orientation-dependent distortion energy. These direct observations of detwinning provide a good understanding of the deformation mechanisms in shape memory alloys.

  10. Shape Memory Alloys and their Applications in Power Generation and Refrigeration

    SciTech Connect (OSTI)

    Cui, Jun

    2013-07-01

    The shape memory effect is closely related to the reversible martensitic phase transformation, which is diffusionless and involves shear deformation. The recoverable transformation between the two phases with different crystalline symmetry results in reversible changes in physical properties such as electrical conductivity, magnetization, and elasticity. Accompanying the transformation is a change of entropy. Fascinating applications are developed based on these changes. In this paper, the history, fundamentals and technical challenges of both thermoelastic and ferromagnetic shape memory alloys are briefly reviewed; applications related to energy conversion such as power generation and refrigeration as well as recent developments will be discussed.

  11. Incorporation of memory effects in coarse-grained modeling via the

    Office of Scientific and Technical Information (OSTI)

    Mori-Zwanzig formalism (Journal Article) | DOE PAGES Incorporation of memory effects in coarse-grained modeling via the Mori-Zwanzig formalism This content will become publicly available on November 13, 2016 « Prev Next » Title: Incorporation of memory effects in coarse-grained modeling via the Mori-Zwanzig formalism Authors: Li, Zhen [1] Search DOE PAGES for author "Li, Zhen" Search DOE PAGES for ORCID "0000000209366928" Search orcid.org for ORCID

  12. Method for training honeybees to respond to olfactory stimuli and enhancement of memory retention therein

    DOE Patents [OSTI]

    McCade, Kirsten J.; Wingo, Robert M.; Haarmann, Timothy K.; Sutherland, Andrew; Gubler, Walter D.

    2015-12-15

    A specialized conditioning protocol for honeybees that is designed for use within a complex agricultural ecosystem. This method ensures that the conditioned bees will be less likely to exhibit a conditioned response to uninfected plants, a false positive response that would render such a biological sensor unreliable for agricultural decision support. Also described is a superboosting training regime that allows training without the aid of expensive equipment and protocols for training in out in the field. Also described is a memory enhancing cocktail that aids in long term memory retention of a vapor signature. This allows the bees to be used in the field for longer durations and with fewer bees trained overall.

  13. Ferroelectric tunneling element and memory applications which utilize the tunneling element

    DOE Patents [OSTI]

    Kalinin, Sergei V. [Knoxville, TN; Christen, Hans M. [Knoxville, TN; Baddorf, Arthur P. [Knoxville, TN; Meunier, Vincent [Knoxville, TN; Lee, Ho Nyung [Oak Ridge, TN

    2010-07-20

    A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.

  14. Optimizing TLB entries for mixed page size storage in contiguous memory

    DOE Patents [OSTI]

    Chen, Dong; Gara, Alan; Giampapa, Mark E.; Heidelberger, Philip; Kriegel, Jon K.; Ohmacht, Martin; Steinmacher-Burow, Burkhard

    2013-04-30

    A system and method for accessing memory are provided. The system comprises a lookup buffer for storing one or more page table entries, wherein each of the one or more page table entries comprises at least a virtual page number and a physical page number; a logic circuit for receiving a virtual address from said processor, said logic circuit for matching the virtual address to the virtual page number in one of the page table entries to select the physical page number in the same page table entry, said page table entry having one or more bits set to exclude a memory range from a page.

  15. Controlling the Actuation Rate of Low Density Shape Memory Polymer Foams in

    Office of Scientific and Technical Information (OSTI)

    Water (Journal Article) | SciTech Connect Journal Article: Controlling the Actuation Rate of Low Density Shape Memory Polymer Foams in Water Citation Details In-Document Search Title: Controlling the Actuation Rate of Low Density Shape Memory Polymer Foams in Water Authors: Singhal, P ; Boyle, T ; Infanger, S ; Letts, S ; Small, W ; Maitland, D J ; Wilson, T S Publication Date: 2012-07-06 OSTI Identifier: 1122257 Report Number(s): LLNL-JRNL-564236 DOE Contract Number: W-7405-ENG-48 Resource

  16. Magnetically nanostructured state in a Ni-Mn-Sn shape-memory alloy (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Magnetically nanostructured state in a Ni-Mn-Sn shape-memory alloy Citation Details In-Document Search This content will become publicly available on June 15, 2016 Title: Magnetically nanostructured state in a Ni-Mn-Sn shape-memory alloy Authors: Yuan, S. ; Kuhns, P. L. ; Reyes, A. P. ; Brooks, J. S. ; Hoch, M. J. R. ; Srivastava, V. ; James, R. D. ; El-Khatib, S. ; Leighton, C. Publication Date: 2015-06-16 OSTI Identifier: 1184888 Grant/Contract Number:

  17. Multiscale twin hierarchy in NiMnGa shape memory alloys with Fe and Cu

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Journal Article: Multiscale twin hierarchy in NiMnGa shape memory alloys with Fe and Cu Citation Details In-Document Search Title: Multiscale twin hierarchy in NiMnGa shape memory alloys with Fe and Cu Authors: Barabash, Rozaliya I. ; Barabash, Oleg M. ; Popov, Dmitry ; Shen, Guoyin ; Park, Changyong ; Yang, Wenge [1] ; ORNL) [2] ; CIW) [2] ; CHPSTAR- China) [2] + Show Author Affiliations (Tennessee-K) ( Publication Date: 2015-04-01 OSTI Identifier:

  18. Shape Memory Alloys and Their Applications in Power Generation and Refrigeration

    SciTech Connect (OSTI)

    Cui, Jun

    2013-03-27

    The shape memory effect is closely related to the reversible martensitic phase transformation, which is diffusionless and involves shear deformation. The recoverable transformation between the two phases with different crystalline symmetry results in reversible changes in physical properties such as electrical conductivity, magnetization, and elasticity. Accompanying the transformation is a change of entropy. Fascinating applications are developed based on these changes. In this paper, the history, fundamentals and technical challenges of both thermoelastic and ferromagnetic shape memory alloys are briefly reviewed; applications related to energy conversion such as power generation and refrigeration as well as recent developments will be discussed.

  19. CASL-8-2015-0021-000 Contact Memory Report CASL.FY14 Rich Williamson

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1-000 Contact Memory Report CASL.FY14 Rich Williamson Idaho National Laboratory January 31, 2015 CASL-U-2015-0021-000 Contact Memory Reduction CASL FY15 Letter Report January 30, 2015 Introduction As documented in a prior CASL milestone report [1], work has been underway to transition to a new system of contact enforcement in MOOSE, and by extension, the fuel performance codes BISON and BISON-CASL, which are based on MOOSE. This new system, known as the Constraint system, achieves significantly

  20. Magnetically nanostructured state in a Ni-Mn-Sn shape-memory alloy (Journal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Article) | DOE PAGES Publisher's Accepted Manuscript: Magnetically nanostructured state in a Ni-Mn-Sn shape-memory alloy This content will become publicly available on June 15, 2016 Title: Magnetically nanostructured state in a Ni-Mn-Sn shape-memory alloy Authors: Yuan, S. ; Kuhns, P. L. ; Reyes, A. P. ; Brooks, J. S. ; Hoch, M. J. R. ; Srivastava, V. ; James, R. D. ; El-Khatib, S. ; Leighton, C. Publication Date: 2015-06-16 OSTI Identifier: 1184888 Grant/Contract Number: FG02-06ER46275

  1. Blue Star Memorial By-Way Dedication: Weldon Spring Interpretive Center |

    Energy Savers [EERE]

    Department of Energy Blue Star Memorial By-Way Dedication: Weldon Spring Interpretive Center Blue Star Memorial By-Way Dedication: Weldon Spring Interpretive Center July 12, 2013 - 1:04pm Addthis Since 2003, the Lewis and Clark Garden Club (LCGC) of St. Charles County, Missouri, has held their monthly meetings in the Weldon Spring Interpretive Center (WSIC). The LCGC has 22 active members and takes care of 2 garden beds at the WSIC Native Plant Educational Garden under the site's

  2. DOE - Office of Legacy Management -- Memorial Hospital - NY 0-16

    Office of Legacy Management (LM)

    Memorial Hospital - NY 0-16 FUSRAP Considered Sites Site: MEMORIAL HOSPITAL (NY.0-16 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: New York , New York NY.0-16-1 Evaluation Year: 1987 NY.0-16-1 Site Operations: Conducted studies for MED including a "Physiological Study of Sunbath Treatments." Involvement with radioactive materials unknown. NY.0-16-1 Site Disposition: Eliminated - Potential for contamination remote NY.0-16-1

  3. V-228: RealPlayer Buffer Overflow and Memory Corruption Error Let Remote

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Users Execute Arbitrary Code | Department of Energy 8: RealPlayer Buffer Overflow and Memory Corruption Error Let Remote Users Execute Arbitrary Code V-228: RealPlayer Buffer Overflow and Memory Corruption Error Let Remote Users Execute Arbitrary Code August 27, 2013 - 6:00am Addthis PROBLEM: Two vulnerabilities were reported in RealPlayer PLATFORM: RealPlayer 16.0.2.32 and prior ABSTRACT: A remote user can cause arbitrary code to be executed on the target user's system REFERENCE LINKS:

  4. An Implicit Algorithm for the Numerical Simulation of Shape-Memory Alloys

    SciTech Connect (OSTI)

    Becker, R; Stolken, J; Jannetti, C; Bassani, J

    2003-10-16

    Shape-memory alloys (SMA) have the potential to be used in a variety of interesting applications due to their unique properties of pseudoelasticity and the shape-memory effect. However, in order to design SMA devices efficiently, a physics-based constitutive model is required to accurately simulate the behavior of shape-memory alloys. The scope of this work is to extend the numerical capabilities of the SMA constitutive model developed by Jannetti et. al. (2003), to handle large-scale polycrystalline simulations. The constitutive model is implemented within the finite-element software ABAQUS/Standard using a user defined material subroutine, or UMAT. To improve the efficiency of the numerical simulations, so that polycrystalline specimens of shape-memory alloys can be modeled, a fully implicit algorithm has been implemented to integrate the constitutive equations. Using an implicit integration scheme increases the efficiency of the UMAT over the previously implemented explicit integration method by a factor of more than 100 for single crystal simulations.

  5. Production of Cu-Al-Ni Shape Memory Alloys by Mechanical Alloy

    SciTech Connect (OSTI)

    Goegebakan, Musa; Soguksu, Ali Kemal; Uzun, Orhan; Dogan, Ali

    2007-04-23

    The mechanical alloying technique has been used to produce shape memory Cu83Al13Ni4 alloy. The structure and thermal properties were examined by using scanning electron microscopy (SEM) and differential scanning calorimetry (DSC). The morphology of the surface suggests the presence of martensite.

  6. Clearing, Sanitization, and Destruction of Information System Storage Media, Memory Devices, and Related Hardware Manual

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2005-06-21

    The manual establishes the DOE requirements and responsibilities for clearing, sanitizing, and destroying DOE information system storage media, memory devices, and related hardware to ensure that no unauthorized information can be retrieved. Canceled by DOE N 205.17. Cancels DOE N 205.12

  7. Atkinson, New Hampshire: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    lt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":"" Hide Map Atkinson is a town in Rockingham County, New Hampshire.1 References US Census Bureau...

  8. Exeter, New Hampshire: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":"" Hide Map Exeter is a town in Rockingham County, New Hampshire.1 References US Census Bureau...

  9. Tax Credits, Rebates & Savings | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Rockingham County- Small Wind Ordinance Although net metering is not required, the ordinance complements the state's net-metering regulations and requires compliance with the...

  10. Tax Credits, Rebates & Savings | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Heat, Solar Space Heat, Solar Photovoltaics, Solar Pool Heating Rockingham County- Small Wind Ordinance Although net metering is not required, the ordinance complements the...

  11. CX-012200: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Determination of Excess Real Property CX(s) Applied: B1.36 Date: 05/01/2014 Location(s): Colorado Offices(s): Legacy Management

  12. CX-010689: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Generic CX Determination for Financial Assistance Awards CX(s) Applied: Unknown Date: 07/17/2013 Location(s): Illinois Offices(s): Chicago Office

  13. Categorical Exclusion Determinations: Connecticut | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    January 27, 2016 CX-100460 Categorical Exclusion Determination Additive Manufacturing and the Environment: A Special Issue of the Journal of Industrial Ecology Award Number: ...

  14. Intermediate photovoltaic system application experiment operational performance report for G. N. Wilcox Memorial Hospital, Kauai, Hawaii, for November 1982

    SciTech Connect (OSTI)

    Not Available

    1982-01-01

    The data accumulated during November 1982 at the intermediate photovoltaic project at G.N. Wilcox Memorial Hospital, Kauai, Hawaii, are presented. Generated energy and environmental (weather) data are presented graphically. Explanations of irregularities not attributable to weather are provided.

  15. Memory Efficient Sequence Analysis Using Compressed Data Structures (Metagenomics Informatics Challenges Workshop: 10K Genomes at a Time)

    ScienceCinema (OSTI)

    Simpson, Jared [Wellcome Trust Sanger Institute

    2013-01-22

    Wellcome Trust Sanger Institute's Jared Simpson on "Memory efficient sequence analysis using compressed data structures" at the Metagenomics Informatics Challenges Workshop held at the DOE JGI on October 12-13, 2011

  16. Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

    SciTech Connect (OSTI)

    El-Atab, Nazek; Rizk, Ayman; Nayfeh, Ammar; Okyay, Ali K.; UNAM-National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara

    2013-11-15

    A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO{sub 2} layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (V{sub t}) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V V{sub t} shift, the memory with CrO{sub 2} layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO{sub 2} layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.

  17. Effects of twin boundary mobility on domain microstructure evolution in magnetic shape memory alloys: Phase field simulation

    SciTech Connect (OSTI)

    Jin, Yongmei M.

    2009-02-09

    Effects of twin boundary mobility on domain microstructure evolution during magnetic field-induced deformation in magnetic shape memory alloys are studied by phase field micromagnetic microelastic modeling. The simulations show that different twin boundary mobilities lead to drastically different domain microstructures and evolution pathways, yielding very different magnetization and strain responses, even with opposite signs. The study also reveals complex domain phenomena in magnetic shape memory alloys.

  18. X-ray diffraction study of the phase transformations in NiTi shape memory alloy

    SciTech Connect (OSTI)

    Uchil, J.; Fernandes, F.M. Braz . E-mail: kkmahesh@rediffmail.com

    2007-03-15

    The phase transformations occurring in heat-treated NiTi shape memory alloys have been studied through the analysis of variation in integrated peak area (integrated intensity) with temperature, under the XRD peak profiles in the transformation temperature range. For this purpose, integrated peak area under the prominent peak corresponding to (110) plane of the austenitic phase has been chosen. The results so obtained are compared with those got from the DSC method. The XRD method is found to be more sensitive.

  19. Clearing, Sanitizing, and Destroying Information System Storage Media, Memory Devices, and Other Related Hardware

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2004-02-19

    This Notice establishes Department of Energy policy requirements and responsibilities for clearing, sanitizing, and destroying DOE information system storage media, memory devices, and other related hardware to ensure no unauthorized information can be retrieved and provides instructions for the same. DOE N 205.15, dated 3-18-05, extends this directive until 3-18-06. No cancellations. Canceled by DOE M 205.1-2.

  20. Elimination of ``memory`` from sample handling and inlet system of a mass spectrometer

    DOE Patents [OSTI]

    Chastgner, P.

    1991-05-08

    This paper describes a method for preparing the sample handling and inlet system of a mass spectrometer for analysis of a subsequent sample following analysis of a previous sample comprising the flushing of the system interior with supercritical CO{sub 2} and venting the interior. The method eliminates the effect of system ``memory`` on the subsequent analysis, especially following persistent samples such as xenon and krypton.

  1. Proposal for the development of 3D Vertically Integrated Pattern Recognition Associative Memory (VIPRAM)

    SciTech Connect (OSTI)

    Deptuch, Gregory; Hoff, Jim; Kwan, Simon; Lipton, Ron; Liu, Ted; Ramberg, Erik; Todri, Aida; Yarema, Ray; Demarteua, Marcel,; Drake, Gary; Weerts, Harry; /Argonne /Chicago U. /Padua U. /INFN, Padua

    2010-10-01

    Future particle physics experiments looking for rare processes will have no choice but to address the demanding challenges of fast pattern recognition in triggering as detector hit density becomes significantly higher due to the high luminosity required to produce the rare process. The authors propose to develop a 3D Vertically Integrated Pattern Recognition Associative Memory (VIPRAM) chip for HEP applications, to advance the state-of-the-art for pattern recognition and track reconstruction for fast triggering.

  2. Energy Scaling Advantages of Resistive Memory Crossbar Based Computation and its Application to Sparse Coding

    Office of Scientific and Technical Information (OSTI)

    9530J Energy Scaling Advantages of Resistive Memory Crossbar Based Computation and its Application to Sparse Coding Sapan Agarwal, Tu-Thach Quach, Ojas Parekh, Erik Debenedictis, Conrad D. James, Matthew Marinella, James B. Aimone Sandia National Laboratories P.O. Box 5800 MS 1084 Albuquerque, NM 87185-1084 Email: sagarwa@sandia.gov Phone: 505-845-0637 Abstract: The exponential increase in data over the last decade presents a significant challenge to analytics efforts that seek to process and

  3. HIGH-PERFORMANCE COMPUTATION OF DISTRIBUTED-MEMORY PARALLEL 3D VORONOI

    Office of Scientific and Technical Information (OSTI)

    PERFORMANCE COMPUTATION OF DISTRIBUTED-MEMORY PARALLEL 3D VORONOI AND DELAUNAY TESSELLATION TOM PETERKA Argonne National Laboratory 9700 S. Cass Ave. Argonne IL 60439 USA DMITRIY MOROZOV Lawrence Berkeley National Laboratory 1 Cyclotron Rd. Berkeley CA 94720 USA CAROLYN PHILLIPS Argonne National Laboratory 9700 S. Cass Ave. Argonne, IL 60439 USA A b s t r a c t . Computing a Voronoi or Delaunay tessellation from a set of points is a core part of the analysis of many simulated and measured

  4. Fluorogel Elastomers with Tunable Transparency, Elasticity, ShapeMemory, and Antifouling Properties

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Angewandte Chemie Polymeric Cels DOI: 10.1002/anie,201310385 Fluorogel Elastomers with Tunable Transparency, Elasticity, Shape- Memory, and Antifouling Properties** Xi Yao,* Stuart S. Dunn, Philseok Kim, Meredith Duffy, Jack Alvarenga, and Joanna Aizenberg* Abstract: Omniphobic fluorogel elastomers were prepared by photocuring perfluorinated acrylates and a perfluoropolyether crosslinker. By tuning either the chemical composition or the temperature that control the crystallinity of the resulting

  5. A proposal for a UPC memory consistency model, v1.0

    SciTech Connect (OSTI)

    Yelick, Katherine; Bonachea, Dan; Wallace, Charles

    2004-05-05

    The memory consistency model in a language defines the order in which the results of write operations maybe observed through read operations. The behavior of a UPC program may depend on the timing of accesses to shared variables, so a program defines a set of possible executions, rather than a single execution. The memory consistency model constrains the set of possible executions for a given program; the user may then rely on properties that are true of all of those executions. The memory consistency model is defined in terms of the read and write operations issued by each thread in naive translation of the code, i.e., without any code transformations by the compiler, with each thread issuing operations as defined by the abstract machine defined in ISO C 5.1.2.3. A UPC compiler or run time system may perform various code transformations to improve performance, so long as they are not visible to the programmer - i.e., provided the set of externally-visible behaviors (the input/output dynamics and volatile behavior defined in ISO C 5.1.2.3) from any execution of the transformed program are identical to those of the original program executing on the abstract machine and adhering to the consistency model defined in this document.

  6. Minimal-memory realization of pearl-necklace encoders of general quantum convolutional codes

    SciTech Connect (OSTI)

    Houshmand, Monireh; Hosseini-Khayat, Saied

    2011-02-15

    Quantum convolutional codes, like their classical counterparts, promise to offer higher error correction performance than block codes of equivalent encoding complexity, and are expected to find important applications in reliable quantum communication where a continuous stream of qubits is transmitted. Grassl and Roetteler devised an algorithm to encode a quantum convolutional code with a ''pearl-necklace'' encoder. Despite their algorithm's theoretical significance as a neat way of representing quantum convolutional codes, it is not well suited to practical realization. In fact, there is no straightforward way to implement any given pearl-necklace structure. This paper closes the gap between theoretical representation and practical implementation. In our previous work, we presented an efficient algorithm to find a minimal-memory realization of a pearl-necklace encoder for Calderbank-Shor-Steane (CSS) convolutional codes. This work is an extension of our previous work and presents an algorithm for turning a pearl-necklace encoder for a general (non-CSS) quantum convolutional code into a realizable quantum convolutional encoder. We show that a minimal-memory realization depends on the commutativity relations between the gate strings in the pearl-necklace encoder. We find a realization by means of a weighted graph which details the noncommutative paths through the pearl necklace. The weight of the longest path in this graph is equal to the minimal amount of memory needed to implement the encoder. The algorithm has a polynomial-time complexity in the number of gate strings in the pearl-necklace encoder.

  7. Performance Analysis of Memory Transfers and GEMM Subroutines on NVIDIA Tesla GPU Cluster

    SciTech Connect (OSTI)

    Allada, Veerendra, Benjegerdes, Troy; Bode, Brett

    2009-08-31

    Commodity clusters augmented with application accelerators are evolving as competitive high performance computing systems. The Graphical Processing Unit (GPU) with a very high arithmetic density and performance per price ratio is a good platform for the scientific application acceleration. In addition to the interconnect bottlenecks among the cluster compute nodes, the cost of memory copies between the host and the GPU device have to be carefully amortized to improve the overall efficiency of the application. Scientific applications also rely on efficient implementation of the BAsic Linear Algebra Subroutines (BLAS), among which the General Matrix Multiply (GEMM) is considered as the workhorse subroutine. In this paper, they study the performance of the memory copies and GEMM subroutines that are critical to port the computational chemistry algorithms to the GPU clusters. To that end, a benchmark based on the NetPIPE framework is developed to evaluate the latency and bandwidth of the memory copies between the host and the GPU device. The performance of the single and double precision GEMM subroutines from the NVIDIA CUBLAS 2.0 library are studied. The results have been compared with that of the BLAS routines from the Intel Math Kernel Library (MKL) to understand the computational trade-offs. The test bed is a Intel Xeon cluster equipped with NVIDIA Tesla GPUs.

  8. Method of determining glass durability

    DOE Patents [OSTI]

    Jantzen, Carol Maryanne (Aiken, SC); Pickett, John Butler (Aiken, SC); Brown, Kevin George (Augusta, GA); Edwards, Thomas Barry (Aiken, SC)

    1998-01-01

    A process for determining one or more leachate concentrations of one or more components of a glass composition in an aqueous solution of the glass composition by identifying the components of the glass composition, including associated oxides, determining a preliminary glass dissolution estimator, .DELTA.G.sub.p, based upon the free energies of hydration for the component reactant species, determining an accelerated glass dissolution function, .DELTA.G.sub.a, based upon the free energy associated with weak acid dissociation, .DELTA.G.sub.a.sup.WA, and accelerated matrix dissolution at high pH, .DELTA.G.sub.a.sup.SB associated with solution strong base formation, and determining a final hydration free energy, .DELTA.G.sub.f. This final hydration free energy is then used to determine leachate concentrations for elements of interest using a regression analysis and the formula log.sub.10 (N C.sub.i (g/L))=a.sub.i +b.sub.i .DELTA.G.sub.f. The present invention also includes a method to determine whether a particular glass to be produced will be homogeneous or phase separated. The present invention is also directed to methods of monitoring and controlling processes for making glass using these determinations to modify the feedstock materials until a desired glass durability and homogeneity is obtained.

  9. Method of determining glass durability

    DOE Patents [OSTI]

    Jantzen, C.M.; Pickett, J.B.; Brown, K.G.; Edwards, T.B.

    1998-12-08

    A process is described for determining one or more leachate concentrations of one or more components of a glass composition in an aqueous solution of the glass composition by identifying the components of the glass composition, including associated oxides, determining a preliminary glass dissolution estimator, {Delta}G{sub p}, based upon the free energies of hydration for the component reactant species, determining an accelerated glass dissolution function, {Delta}G{sub a}, based upon the free energy associated with weak acid dissociation, {Delta}G{sub a}{sup WA}, and accelerated matrix dissolution at high pH, {Delta}G{sub a}{sup SB} associated with solution strong base formation, and determining a final hydration free energy, {Delta}G{sub f}. This final hydration free energy is then used to determine leachate concentrations for elements of interest using a regression analysis and the formula log{sub 10}(N C{sub i}(g/L))=a{sub i} + b{sub i}{Delta}G{sub f}. The present invention also includes a method to determine whether a particular glass to be produced will be homogeneous or phase separated. The present invention is also directed to methods of monitoring and controlling processes for making glass using these determinations to modify the feedstock materials until a desired glass durability and homogeneity is obtained. 4 figs.

  10. CX-000768: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Determining the Variability of Continuous Mercury Monitors at Low Mercury LevelsCX(s) Applied: B3.6Date: 02/07/2010Location(s): Grand Forks, North DakotaOffice(s): Fossil Energy, National Energy Technology Laboratory

  11. CX-100474 Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Final Determination of Coverage for Miscellaneous Refrigeration Products RIN 1904-AC66 CX(s) Applied: A6 EERE-Buildings Technology Program Date: 02/18/2016 Location(s): Nationwide Office(s): Golden Field Office

  12. CX-010493: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Determining Distribution Coefficients by Surface-Enhanced Raman Spectroscopy (SERS) CX(s) Applied: B3.6 Date: 05/14/2013 Location(s): South Carolina Offices(s): Savannah River Operations Office

  13. CX-008905: Categorical Exclusion Determination

    Office of Energy Efficiency and Renewable Energy (EERE)

    Optimizing Accuracy of Determinations of Carbon Dioxide Storage Capacity and Permanence CX(s) Applied: A1, A9, B3.6 Date: 08/29/2012 Location(s): Wyoming Offices(s): National Energy Technology Laboratory

  14. CX-004264: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Phase II, Determination of Uranium in GroundwaterCX(s) Applied: B3.8Date: 09/27/2010Location(s): Richland, WashingtonOffice(s): Environmental Management, Office of River Protection-Richland Office

  15. CX-012121: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Notice of Preliminary Determination of Energy Savings for ANSI/ASHRAE/IES Standard 90.1-2013 CX(s) Applied: A6 Date: 04/25/2014 Location(s): CX: none Offices(s): Golden Field Office

  16. CX-010776: Categorical Exclusion Determination

    Office of Energy Efficiency and Renewable Energy (EERE)

    Advanced Test Reactor (ATR) Primary Coolant Leak Rate Determination System Equipment Replacement CX(s) Applied: B2.2 Date: 07/24/2013 Location(s): Idaho Offices(s): Nuclear Energy

  17. Gender determination of avian embryo

    DOE Patents [OSTI]

    Daum, Keith A. (Idaho Falls, ID); Atkinson, David A. (Idaho Falls, ID)

    2002-01-01

    Disclosed is a method for gender determination of avian embryos. During the embryo incubation process, the outer hard shells of eggs are drilled and samples of allantoic fluid are removed. The allantoic fluids are directly introduced into an ion mobility spectrometer (IMS) for analysis. The resulting spectra contain the relevant marker peaks in the positive or negative mode which correlate with unique mobilities which are sex-specific. This way, the gender of the embryo can be determined.

  18. Estimated Cost Description Determination Date:

    Office of Environmental Management (EM)

    Revised and posted 2/10/2011 *Title, Location Estimated Cost Description Determination Date: uncertain Transmittal to State: uncertain EA Approval: uncertain $50,000 FONSI: uncertain Determination Date: uncertain Transmittal to State: uncertain EA Approval: uncertain FONSI: uncertain Total Estimated Cost $70,000 Attachment: Memo, Moody to Marcinowski, III, SUBJECT: NEPA 2011 APS for DOE-SRS, Dated: Annual NEPA Planning Summary Environmental Assessments (EAs) Expected to be Initiated in the Next

  19. Experimental Analysis and Numerical Simulation of Tensile Behaviour of TiNi Shape Memory Alloy Fibres Reinforced Epoxy Matrix Composite at High Temperatures

    SciTech Connect (OSTI)

    Sahli, M. L.; Necib, B.

    2011-05-04

    The shape memory alloys (SMA) possess both sensing and actuating functions due to their shape memory effect, pseudo-elasticity, high damping capability and other remarkable properties. Combining the SMA with other materials can create intelligent or smart composites. The epoxy resin composites filled with TiNi alloys fibres were fabricated and their mechanical properties have been investigated. In this study, stress/strain relationships for a composite with embedded shape memory materials (SMA) fibres are presented. The paper illustrates influence of the SMA fibres upon changes in mechanical behaviour of a composite plate with the SMA components, firstly and secondly, the actuating ability and reliability of shape memory alloy hybrid composites.

  20. MEANS FOR DETERMINING CENTRIFUGE ALIGNMENT

    DOE Patents [OSTI]

    Smith, W.Q.

    1958-08-26

    An apparatus is presented for remotely determining the alignment of a centrifuge. The centrifage shaft is provided with a shoulder, upon which two followers ride, one for detecting radial movements, and one upon the shoulder face for determining the axial motion. The followers are attached to separate liquid filled bellows, and a tube connects each bellows to its respective indicating gage at a remote location. Vibrations produced by misalignment of the centrifuge shaft are transmitted to the bellows, and tbence through the tubing to the indicator gage. This apparatus is particularly useful for operation in a hot cell where the materials handled are dangerous to the operating personnel.

  1. Experimental Studies on Dynamic Vibration Absorber using Shape Memory Alloy (NiTi) Springs

    SciTech Connect (OSTI)

    Kumar, V. Raj; Kumar, M. B. Bharathi Raj; Kumar, M. Senthil

    2011-10-20

    Shape memory alloy (SMA) springs have been used as actuators in many applications although their use in the vibration control area is very recent. Since shape memory alloys differ from conventional alloy materials in many ways, the traditional design approach for springs is not completely suitable for designing SMA springs. Some vibration control concepts utilizing unique characteristics of SMA's will be presented in this paper.A dynamic vibration absorber (DVA) using shape memory alloy (SMA) actuator is developed for attenuation of vibration in a cantilever beam. The design procedure of the DVA is presented. The system consists of a cantilever beam which is considered to generate the real-time vibration using shaker. A SMA spring is used with a mass attached to its end. The stiffness of the SMA spring is dynamically varied in such a way to attenuate the vibration. Both simulation and experimentation are carried out using PID controller. The experiments were carried out by interfacing the experimental setup with a computer using LabVIEW software, Data acquisition and control are implemented using a PCI data acquisition card. Standard PID controllers have been used to control the vibration of the beam. Experimental results are used to demonstrate the effectiveness of the controllers designed and the usefulness of the proposed test platform by exciting the structure at resonance. In experimental setup, an accelerometer is used to measure the vibration which is fed to computer and correspondingly the SMA spring is actuated to change its stiffness to control the vibration. The results obtained illustrate that the developed DVA using SMA actuator is very effective in reducing structural response and have great potential to be an active vibration control medium.

  2. ZnO Nanorod Thermoplastic Polyurethane Nanocomposites: Morphology and Shape Memory Performance

    SciTech Connect (OSTI)

    Koerner, H.; Kelley, J; George, J; Drummy, L; Mirau, P; Bell, N; Hsu, J; Vaia, R

    2009-01-01

    The impact of dispersed alkylthiol-modified ZnO nanorods, as a function of rod aspect ratio and concentration, on the shape memory character of a thermoplastic polyurethane with low hard-segment density (LHS-TPU) is examined relative to the enhanced performance occurring for carbon nanofiber (CNF) dispersion. Solution blending resulted in uniform dispersion within the LHS-TPU of the ZnO nanorods at low volume (weight) fractions (<2.9% v/v (17.75% w/w)). Tensile modulus enhancements were modest though, comparable to values observed for spherical nanofillers. Shape memory characteristics, which in this LHS-TPU result when strain-induced crystallites retard the entropic recovery of the deformed chains, were unchanged for these low volume fraction ZnO nanocomposites. Higher ZnO loadings (12% v/v (50% w/w)) exhibited clustering of ZnO nanorods into a mesh-like structure. Here, tensile modulus and shape recovery characteristics were improved, although not as great as seen for comparable CNF addition. Wide angle X-ray diffraction and NMR revealed that the addition of ZnO nanorods did not impact the inherent strain induced crystallization of the LHS-TPU, which is in contrast to the impact of CNFs and emphasizes the impact of interactions at the polymer-nanoparticle interface. Overall, these findings reinforce the hypothesis that the shape memory properties of polymer nanocomposites are governed by the extent to which nanoparticle addition, via nanoparticle aspect ratio, hierarchical morphology, and interfacial interactions, impacts the molecular mechanism responsible for trapping elastic strain.

  3. Vacancy dynamic in Ni-Mn-Ga ferromagnetic shape memory alloys

    SciTech Connect (OSTI)

    Merida, D.; Sánchez-Alarcos, V.; Pérez-Landazábal, J. I.; Recarte, V.; Plazaola, F.

    2014-06-09

    Vacancies control any atomic ordering process and consequently most of the order-dependent properties of the martensitic transformation in ferromagnetic shape memory alloys. Positron annihilation spectroscopy demonstrates to be a powerful technique to study vacancies in NiMnGa alloys quenched from different temperatures and subjected to post-quench isothermal annealing treatments. Considering an effective vacancy type the temperature dependence of the vacancy concentration has been evaluated. Samples quenched from 1173?K show a vacancy concentration of 1100?±?200?ppm. The vacancy migration and formation energies have been estimated to be 0.55?±?0.05?eV and 0.90?±?0.07?eV, respectively.

  4. A random access memory immune to single event upset using a T-Resistor

    DOE Patents [OSTI]

    Ochoa, A. Jr.

    1987-10-28

    In a random access memory cell, a resistance ''T'' decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell. 4 figs.

  5. Random access memory immune to single event upset using a T-resistor

    DOE Patents [OSTI]

    Ochoa, Jr., Agustin

    1989-01-01

    In a random access memory cell, a resistance "T" decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell.

  6. Grand Junction Office Founder Honored at the Philip C. Leahy Memorial Park

    Broader source: Energy.gov (indexed) [DOE]

    Dedication and Open House | Department of Energy 4. Optimize the use of land and assets. plaque.png The memorial plaque was unveiled at the event. The U.S. Department of Energy (DOE) Office of Legacy Management (LM) held an open house and park dedication at the Grand Junction, Colorado, Office to commemorate its place in the Manhattan Project and Cold War histories. The park, located in the middle of the Grand Junction Office campus, was dedicated to Army Major (retired) Philip C. Leahy.

  7. An object oriented design for high performance linear algebra on distributed memory architectures

    SciTech Connect (OSTI)

    Dongarra, J.J. |; Walker, D.W.; Pozo, R.

    1993-12-31

    We describe the design of ScaLAPACK++, an object oriented C++ library for implementing linear algebra computations on distributed memory multicomputers. This package, when complete, will support distributed dense, banded, sparse matrix operations for symmetric, positive-definite, and non-symmetric cases. In ScaLAPACK++ we have employed object oriented design methods to enchance scalability, portability, flexibility, and ease-of-use. We illustrate some of these points by describing the implementation of a right-looking LU factorization for dense systems in ScaLAPACK++.

  8. CX-100267 Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Exclusion Determination CX-100267 Categorical Exclusion Determination Next Generation Logistics Systems for Delivering Optimal Biomass Feedstocks to Biorefining Industries in...

  9. Adjudicative Guidelines for Determining Eligibility for Access...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Adjudicative Guidelines for Determining Eligibility for Access to Classified Information Adjudicative Guidelines for Determining Eligibility for Access to Classified Information ...

  10. CX-100363 Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Exclusion Determination CX-100363 Categorical Exclusion Determination Marine Algae Industrialization Consortium (MAGIC): Combining biofuel and high-value bioproducts to...

  11. CX-100144 Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Exclusion Determination CX-100144 Categorical Exclusion Determination Solar and Distributed Generation as Key Elements in Meeting Vermont's Comprehensive Energy Plan...

  12. CX-100019: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Determination of Rare Earths in Geothermal Brines and Evaluation of Potential Extraction Techniques CX(s) Applied: A9, B3.1, B3.6 Date: 08/18/2014 Location(s): California Offices(s): Golden Field Office Technology Office: Geothermal Technologies Award Number: DE-EE0006750

  13. CX-011193: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Categorical Exclusion Determination for Indoor, Small- and Pilot-Scale Research and Development CX(s) Applied: A9, B1.7, B3.6, B3.10, B3.12, B3.15, B5.1, B5.15 Date: 08/05/2013 Location(s): California Offices(s): Berkeley Site Office

  14. CX-012693: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Experimental Determination and Mechanistic Modeling of Used Fuel Drying by Vacuum and Gas Circulation for Dry Cask Storage – University of South Carolina CX(s) Applied: B3.6Date: 41869 Location(s): South CarolinaOffices(s): Nuclear Energy

  15. CX-011104: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Coupled Thermo-Mechanical and Photo-Chemical Degradation Mechanisms that Determine the Reliability and Operational Lifetimes for Concentrated Photovoltaic Technologies CX(s) Applied: A9, B3.6 Date: 08/29/2013 Location(s): California Offices(s): Golden Field Office

  16. CX-000373: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Measurements of 222 Radon, 220 Radon, and Carbon Dioxide Emissions in Natural Carbon Dioxide Fields in Wyoming: Monitoring, Verification, and Analysis Techniques for Determining Gas Transport and Caprock IntegrityCX(s) Applied: A1, A9, B3.6, B3.8Date: 11/20/2009Location(s): Laramie, WyomingOffice(s): Fossil Energy, National Energy Technology Laboratory

  17. CX-100558 Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Final Determination of Coverage for Portable Air Conditioners (1904-AD02) RIN 1904-AD02 CX(s) Applied: A6 EERE-Buildings Technology Program Date: 03/03/2016 Location(s): Nationwide Office(s): Golden Field Office

  18. CX-008738: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Determination of Microstructure and Chemical State Changes in Ion-Irradiated Fuels and Structural Components with a High Kinetic Energy Electron Detector – Illinois Institute of Technology CX(s) Applied: B3.6 Date: 05/22/2012 Location(s): Idaho Offices(s): Idaho Operations Office

  19. CX-002602: Categorical Exclusion Determination

    Office of Energy Efficiency and Renewable Energy (EERE)

    Determining Optimal Fuel Performance in Adapting Onsite Electrical Generation Platforms to Operate on Producer Gas from Fuels of OpportunityCX(s) Applied: A9, A11Date: 12/11/2009Location(s): Minneapolis, MinnesotaOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

  20. CX-002600: Categorical Exclusion Determination

    Office of Energy Efficiency and Renewable Energy (EERE)

    Determining Optimal Fuel Performance in Adapting Onsite Electrical Generation Platforms to Operate on Producer Gas from Fuels of OpportunityCX(s) Applied: B3.6Date: 12/11/2009Location(s): Minneapolis, MinnesotaOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

  1. CX-002599: Categorical Exclusion Determination

    Office of Energy Efficiency and Renewable Energy (EERE)

    Determining Optimal Fuel Performance in Adapting Onsite Electrical Generation Platforms to Operate on Producer Gas from Fuels of OpportunityCX(s) Applied: B3.6Date: 12/11/2009Location(s): Berkeley, CaliforniaOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

  2. CX-002598: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Determining Optimal Fuel Performance in Adapting Onsite Electrical Generation Platforms to Operate on Producer Gas from Fuels of OpportunityCX(s) Applied: B3.6Date: 12/11/2009Location(s): Morris, MinnesotaOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

  3. CX-002601: Categorical Exclusion Determination

    Office of Energy Efficiency and Renewable Energy (EERE)

    Determining Optimal Fuel Performance in Adapting Onsite Electrical Generation Platforms to Operate on Producer Gas from Fuels of OpportunityCX(s) Applied: B3.6Date: 12/11/2009Location(s): Fridley, MinnesotaOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

  4. CX-100312 Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Withdrawal of Proposed Determination Regarding Energy Conservation Program: Natural Draft Commercial Boilers RIN: 1904-AD01 CX(s) Applied: A5 EERE- Buildings Technology Program Date: 07/20/2015 Location(s): Nationwide Office(s): Golden Field Office

  5. Clinical Application of a New Indwelling Catheter with a Side-Hole and Spirally Arranged Shape-Memory Alloy for Hepatic Arterial Infusion Chemotherapy

    SciTech Connect (OSTI)

    Yagihashi, Kunihiro Takizawa, Kenji; Ogawa, Yukihisa; Okamoto, Kyoko; Yoshimatsu, Misako; Fujikawa, Atsuko; Shimamoto, Hiroshi; Nakajima, Yasuo

    2010-12-15

    A new indwelling catheter, G-spiral (GSP), was developed for hepatic arterial infusion chemotherapy (HAIC) by way of an implanted catheter-port system (CPS). Here we evaluated its physical properties and the outcomes of its clinical use. The GSP vessel-fixing power and its ability to follow a guidewire were determined with a vascular in vitro model, and Student t test was used to determine statistical significance (P < 0.05). A retrospective analysis was performed to evaluate the technical success rate and to identify the clinical complications associated with radiologic CPS implantation with GSP in 65 patients with unresectable hepatic tumors. The mean vessel-fixing power of the GSP (14.4 g) significantly differed from that of a GSP with a cut shape-memory alloy (3.3 g). The mean resistance to following the guidewire displayed by the GSP (88.5 g) was significantly less than that for a 5F W-spiral (106.3 g) or 4F Cobra-type angiographic catheter (117.8 g). The CPS was placed successfully in 64 of 65 cases (98.5%). Hepatic artery occlusion was observed in one case. Occlusion, cracking, and infection of CPS were observed in one, two, and one case, respectively. The GSP is a highly useful indwelling catheter that can be used for HAIC.

  6. In Situ Photoelectron Emission Microscopy of a Thermally Induced Martensitic Transformation in a CuZnAI Shape Memory Alloy

    SciTech Connect (OSTI)

    Xiong, Gang; Joly, Alan G.; Beck, Kenneth M.; Hess, Wayne P.; Cai, Mingdong; Langford, Stephen C.; Dickinson, J T.

    2006-02-27

    Photoemission electron microscopy, in conjunction with photoemission spectroscopy, reflectivity, and surface roughness measurements, is used to study the thermally-induced martensitic transformation in a CuZnAI shape memory alloy. Real-time phase transformation is observed as a nearly instantaneous change of photoelectron intensity, accompanied by microstructural deformation and displacement due to the shape memory effect. The difference in the photoelectron intensity before and after the phase transformation is attributed to the concomitant change of work function as measured by photoelectron spectroscopy. Photoemission electron microscopy is shown to be a valuable new technique facilitating the study of phase transformations in shape memory alloys, and provides real-time information on microstructural changes and phase-dependent electronic properties.

  7. Memory-bit selection and recording by rotating fields in vortex-core cross-point architecture

    SciTech Connect (OSTI)

    Yu, Y. -S.; Jung, H.; Lee, K. -S.; Fischer, P.; Kim, S. -K.

    2010-10-21

    In one of our earlier studies [Appl. Phys. Lett. 92, 022509 (2008)], we proposed a concept of robust information storage, recording and readout, which can be implementaed in nonvolatile magnetic random-access memories and is based on the energetically degenerated twofold ground states of vortex-core magnetizations. In the present study, we experimentally demonstrate reliable memory-bit selection and information recording in vortex-core cross-point architecture, specifically using a two-by-two vortex-state disk array. In order to efficiently switch a vortex core positioned at the intersection of crossed electrodes, two orthogonal addressing electrodes are selected, and then two Gaussian pulse currents of optimal pulse width and time delay are applied. Such tailored pulse-type rotating magnetic fields which occurs only at the selected intersection is prerequisite for a reliable memory-bit selection and low-power-consumption recording of information in the existing cross-point architecture.

  8. Adams Memorial

    ScienceCinema (OSTI)

    None

    2011-04-25

    7me conférence en mémoire de Sir John Adams (1920-1984) donné par B.Wilk, physicien et scientifique né en Norvège, qui a pour thème: HERA a status report

  9. Memorial Day

    Broader source: Energy.gov [DOE]

    Three years after the Civil War ended, on May 5, 1868, the head of an organization of Union veterans, the Grand Army of the Republic (GAR), established Decoration Day as a time for the nation to decorate the graves of the war dead with flowers. Maj. Gen. John A. Logan declared that Decoration Day should be observed on May 30. It is believed that date was chosen because flowers would be in bloom all over the country.

  10. An Application Specific Memory Characterization Technique for Co-processor Accelerators

    SciTech Connect (OSTI)

    Alam, Sadaf R; Smith, Melissa C; Vetter, Jeffrey S

    2007-01-01

    Commodity accelerator technologies including reconfigurable devices and graphical processing units (GPUs) provide an order of magnitude performance improvement compared to mainstream microprocessor systems. A number of compute-intensive, scientific applications, therefore, can potentially benefit from commodity computing devices available in the form of co-processor accelerators. However, there has been little progress in accelerating production-level scientific applications using these technologies due to several programming and performance challenges. One of the key performance challenges is performance sustainability. While computation is often accelerated substantially by accelerator devices, the achievable performance is significantly lower once the data transfer costs and overheads are incorporated. We present an application-specific memory characterization technique for an FPGA-accelerated system that enabled us to reduce data transfer overhead for a scientific application by a factor of 5. We classify large data structures in the application according to their read and write characteristics and access patterns. This classification in turn enabled us to sustain a speedup of over three for a full-scale scientific application. Our proposed technique extends to applications that exhibit similar memory behavior and to co-processor accelerator systems that support data streaming and pipelining, and allow overlapped execution between the host and the accelerator device.

  11. A Tensor Product Formulation of Strassen's Matrix Multiplication Algorithm with Memory Reduction

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kumar, B.; Huang, C.-H.; Sadayappan, P.; Johnson, R. W.

    1995-01-01

    In this article, we present a program generation strategy of Strassen's matrix multiplication algorithm using a programming methodology based on tensor product formulas. In this methodology, block recursive programs such as the fast Fourier Transforms and Strassen's matrix multiplication algorithm are expressed as algebraic formulas involving tensor products and other matrix operations. Such formulas can be systematically translated to high-performance parallel/vector codes for various architectures. In this article, we present a nonrecursive implementation of Strassen's algorithm for shared memory vector processors such as the Cray Y-MP. A previous implementation of Strassen's algorithm synthesized from tensor product formulas required workingmore » storage of size O(7 n ) for multiplying 2 n × 2 n matrices. We present a modified formulation in which the working storage requirement is reduced to O(4 n ). The modified formulation exhibits sufficient parallelism for efficient implementation on a shared memory multiprocessor. Performance results on a Cray Y-MP8/64 are presented.« less

  12. A multi-state magnetic memory dependent on the permeability of Metglas

    SciTech Connect (OSTI)

    Petrie, J. R.; Wieland, K. A.; Timmerwilke, J. M.; Burke, R. A.; Newburgh, G. A.; Fischer, G. A.; Edelstein, A. S.; Barron, S. C.; Burnette, J. E.

    2015-04-06

    A three-state magnetic memory was developed based on differences in the magnetic permeability of a soft ferromagnetic media, Metglas 2826MB (Fe{sub 40}Ni{sub 38}Mo{sub 4}B{sub 18}). By heating bits of a 250?nm thick Metglas film with 70–100 mW of laser power, we were able to tune the local microstructure, and hence, the permeability. Ternary memory states were created by using lower laser power to enhance the initial permeability through localized atomic rearrangement and higher power to reduce the permeability through crystallization. The permeability of the bits was read by detecting variations in an external 32?Oe probe field within 10 ?m of the media via a magnetic tunnel junction read head. Compared to data based on remanent magnetization, these multi-permeability bits have enhanced insensitivity to unexpected field and temperature changes. We found that data was not corrupted after exposure to fields of 1 T or temperatures of 423?K, indicating the effectiveness of this multi-state approach for safely storing large amounts of data.

  13. Aho-Corasick String Matching on Shared and Distributed Memory Parallel Architectures

    SciTech Connect (OSTI)

    Tumeo, Antonino; Villa, Oreste; Chavarría-Miranda, Daniel

    2012-03-01

    String matching is at the core of many critical applications, including network intrusion detection systems, search engines, virus scanners, spam filters, DNA and protein sequencing, and data mining. For all of these applications string matching requires a combination of (sometimes all) the following characteristics: high and/or predictable performance, support for large data sets and flexibility of integration and customization. Many software based implementations targeting conventional cache-based microprocessors fail to achieve high and predictable performance requirements, while Field-Programmable Gate Array (FPGA) implementations and dedicated hardware solutions fail to support large data sets (dictionary sizes) and are difficult to integrate and customize. The advent of multicore, multithreaded, and GPU-based systems is opening the possibility for software based solutions to reach very high performance at a sustained rate. This paper compares several software-based implementations of the Aho-Corasick string searching algorithm for high performance systems. We discuss the implementation of the algorithm on several types of shared-memory high-performance architectures (Niagara 2, large x86 SMPs and Cray XMT), distributed memory with homogeneous processing elements (InfiniBand cluster of x86 multicores) and heterogeneous processing elements (InfiniBand cluster of x86 multicores with NVIDIA Tesla C10 GPUs). We describe in detail how each solution achieves the objectives of supporting large dictionaries, sustaining high performance, and enabling customization and flexibility using various data sets.

  14. Product-form solution techniques for the performance analysis of multiple-bus multiprocessor systems with nonuniform memory references

    SciTech Connect (OSTI)

    Chiola, G.; Marsan, M.A.; Balbo, G.

    1988-05-01

    Recursive relations are derived for the exact computation of the steady-state probability distribution of some queueing models with passive resources that can be used to analyze the performance of multiple-bus multiprocessor system architectures. The most general case that was shown to admit a product-form solution is described, and a recursive solution is obtained considering different processor access rates, different memory selection probabilities, and an FCFS bus scheduling policy. Several simpler cases allowing easier model solutions are also considered. Numerical evaluations of large computing systems with nonuniform memory references show the usefulness of the results.

  15. Method for determining gene knockouts

    DOE Patents [OSTI]

    Maranas, Costas D.; Burgard, Anthony R.; Pharkya, Priti

    2011-09-27

    A method for determining candidates for gene deletions and additions using a model of a metabolic network associated with an organism, the model includes a plurality of metabolic reactions defining metabolite relationships, the method includes selecting a bioengineering objective for the organism, selecting at least one cellular objective, forming an optimization problem that couples the at least one cellular objective with the bioengineering objective, and solving the optimization problem to yield at least one candidate.

  16. Method for determining gene knockouts

    DOE Patents [OSTI]

    Maranas, Costa D; Burgard, Anthony R; Pharkya, Priti

    2013-06-04

    A method for determining candidates for gene deletions and additions using a model of a metabolic network associated with an organism, the model includes a plurality of metabolic reactions defining metabolite relationships, the method includes selecting a bioengineering objective for the organism, selecting at least one cellular objective, forming an optimization problem that couples the at least one cellular objective with the bioengineering objective, and solving the optimization problem to yield at least one candidate.

  17. Range determination for scannerless imaging

    DOE Patents [OSTI]

    Muguira, Maritza Rosa (Albuquerque, NM); Sackos, John Theodore (Albuquerque, NM); Bradley, Bart Davis (Albuquerque, NM); Nellums, Robert (Albuquerque, NM)

    2000-01-01

    A new method of operating a scannerless range imaging system (e.g., a scannerless laser radar) has been developed. This method is designed to compensate for nonlinear effects which appear in many real-world components. The system operates by determining the phase shift of the laser modulation, which is a physical quantity related physically to the path length between the laser source and the detector, for each pixel of an image.

  18. RECORD OF CATEGORICAL EXCLUSION DETERMINATION

    Energy Savers [EERE]

    . Categorical Exclusion for erosion repair and cactus relocation along the existing Tucson-Apache 11S-kV transmission line in Pima County, Arizona RECORD OF CATEGORICAL EXCLUSION DETERMINATION A. Proposed Action: Western proposes to construct a new access road along the existing Tucson-Apache 11S-kV transmission line within the existing right-of-way and to repair erosion damage at transmission line structures. Access road construction will consist of stripping, clearing and removing vegetation

  19. Crystal face temperature determination means

    DOE Patents [OSTI]

    Nason, D.O.; Burger, A.

    1994-11-22

    An optically transparent furnace having a detection apparatus with a pedestal enclosed in an evacuated ampule for growing a crystal thereon is disclosed. Temperature differential is provided by a source heater, a base heater and a cold finger such that material migrates from a polycrystalline source material to grow the crystal. A quartz halogen lamp projects a collimated beam onto the crystal and a reflected beam is analyzed by a double monochromator and photomultiplier detection spectrometer and the detected peak position in the reflected energy spectrum of the reflected beam is interpreted to determine surface temperature of the crystal. 3 figs.

  20. Liquid chromatographic determination of water

    DOE Patents [OSTI]

    Fortier, Nancy E.; Fritz, James S.

    1990-11-13

    A sensitive method for the determination of water in the presence of common interferences is presented. The detection system is based on the effect of water on the equilibrium which results from the reaction aryl aldehydes, such as cinnamaldehyde and methanol in the eluent to form cinnamaldehyde dimethylacetal, plus water. This equilibrium is shifted in a catalytic atmosphere of a hydrogen ion form past column reactor. The extent of the shift and the resulting change in absorbance are proportional to the amount of water present.

  1. Liquid chromatographic determination of water

    DOE Patents [OSTI]

    Fortier, N.E.; Fritz, J.S.

    1990-11-13

    A sensitive method for the determination of water in the presence of common interferences is presented. The detection system is based on the effect of water on the equilibrium which results from the reaction aryl aldehydes, such as cinnamaldehyde and methanol in the eluent to form cinnamaldehyde dimethylacetal, plus water. This equilibrium is shifted in a catalytic atmosphere of a hydrogen ion form past column reactor. The extent of the shift and the resulting change in absorbance are proportional to the amount of water present. 1 fig.

  2. Estimated Cost Description Determination Date:

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Title, Location Estimated Cost Description Determination Date: 2010 LCLS Undulator 2 is envisioned to be a 0.2 - 2keV FEL x-ray source, capable of delivering x-rays to End Station A (ESA), located in the existing Research Yard at SLAC. It will also be configurable as a non- FEL hard x-ray source capable of delivering a chirped x-ray pulse for single-shot broad-spectrum measurements. The project would entail reconstruction of the electron beam transport to End Station A, construction and

  3. SPECIAL REREVIEW FINAL DETERMINATION UNCLASSIFIED

    Office of Legacy Management (LM)

    SPECIAL REREVIEW FINAL DETERMINATION UNCLASSIFIED , ?4~0180N SctuAnr P. 0. 00x *a STATION F New YORK, N. Y. IN RLPLY RCFSRTO EID?f A- 43 MS ~-7405 eng-8 ". Subject: Contract No.H-7405 eng-8 with Metal Hydrides Incorporated. MEMORAhDUM to the Files. 1. Reference is made to basi.c communication dated 27 September 1945, Symbol No. EIDM 1%-30-b, requesting certain information with respect to the subject contract. 2. Reference pars,?-raph a. The Government committed to restore Contractor's plant

  4. RECORD OF CATEGORICAL EXCLUSION DETERMINATION

    Energy Savers [EERE]

    geological boring near 9 structure locations along the existing ED2-ED5 230-kV transmission line located in Pinal County, Arizona RECORD OF CATEGORICAL EXCLUSION DETERMINATION A, Proposed Action: Western proposes to do geologic borings within our right-of-way near structures 21/5,22/5,23/6,25/4,26/5,27/6,28/5,29/5 & 30/4 along the existing ED2-ED5 230-kV transmission line. This project involves accessing each bore hole location with a auger/drill rig and light crew trucks, setting up the

  5. Determination of a mutational spectrum

    DOE Patents [OSTI]

    Thilly, William G. (Winchester, MA); Keohavong, Phouthone (Cambridge, MA)

    1991-01-01

    A method of resolving (physically separating) mutant DNA from nonmutant DNA and a method of defining or establishing a mutational spectrum or profile of alterations present in nucleic acid sequences from a sample to be analyzed, such as a tissue or body fluid. The present method is based on the fact that it is possible, through the use of DGGE, to separate nucleic acid sequences which differ by only a single base change and on the ability to detect the separate mutant molecules. The present invention, in another aspect, relates to a method for determining a mutational spectrum in a DNA sequence of interest present in a population of cells. The method of the present invention is useful as a diagnostic or analytical tool in forensic science in assessing environmental and/or occupational exposures to potentially genetically toxic materials (also referred to as potential mutagens); in biotechnology, particularly in the study of the relationship between the amino acid sequence of enzymes and other biologically-active proteins or protein-containing substances and their respective functions; and in determining the effects of drugs, cosmetics and other chemicals for which toxicity data must be obtained.

  6. Low power zinc-oxide based charge trapping memory with embedded silicon nanoparticles via poole-frenkel hole emission

    SciTech Connect (OSTI)

    El-Atab, Nazek; Nayfeh, Ammar; Ozcan, Ayse; Alkis, Sabri; Okyay, Ali K.; Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara

    2014-01-06

    A low power zinc-oxide (ZnO) charge trapping memory with embedded silicon (Si) nanoparticles is demonstrated. The charge trapping layer is formed by spin coating 2?nm silicon nanoparticles between Atomic Layer Deposited ZnO steps. The threshold voltage shift (?V{sub t}) vs. programming voltage is studied with and without the silicon nanoparticles. Applying ?1?V for 5?s at the gate of the memory with nanoparticles results in a ?V{sub t} of 3.4?V, and the memory window can be up to 8?V with an excellent retention characteristic (>10 yr). Without nanoparticles, at ?1?V programming voltage, the ?V{sub t} is negligible. In order to get ?V{sub t} of 3.4?V without nanoparticles, programming voltage in excess of 10?V is required. The negative voltage on the gate programs the memory indicating that holes are being trapped in the charge trapping layer. In addition, at 1?V the electric field across the 3.6?nm tunnel oxide is calculated to be 0.36 MV/cm, which is too small for significant tunneling. Moreover, the ?V{sub t} vs. electric field across the tunnel oxide shows square root dependence at low fields (E??2.7 MV/cm). This indicates that Poole-Frenkel Effect is the main mechanism for holes emission at low fields and Phonon Assisted Tunneling at higher fields.

  7. Intermediate photovoltaic system application experiment operational performance report, for G. N. Wilcox Memorial Hospital, Kauai, Hawaii. Vol. 9

    SciTech Connect (OSTI)

    Not Available

    1983-06-01

    This report presents the data accumulated during January 1983 at the intermediate photovoltaic project at G.N. Wilcox Memorial Hospital, Kauai, Hawaii. Generated energy and environmental (weather) data are presented graphically. Explanations of irregularities not attributable to weather are provided.

  8. Intermediate photovoltaic system application experiment operational performance report. Volume 1. For G. N. Wilcox Memorial Hospital, Kauai, Hawaii

    SciTech Connect (OSTI)

    Not Available

    1982-09-01

    Presented are the data accumulated during January, February, and March 1982 at the intermediate photovoltaic project at G.N. Wilcox Memorial Hospital, Kauai, Hawaii. Generated energy and environmental (weather) data are presented graphically. Explanations of irregularities not attributable to weather are provided.

  9. Intermediate photovoltaic system application experiment operational performance report. Volume 2 for G. N. Wilcox Memorial Hospital, Kauai, HI

    SciTech Connect (OSTI)

    Not Available

    1982-10-01

    Presented are the data accumulated during April and May 1982 at this intermediate photovoltaic project at G.N. Wilcox Memorial Hospital, Kauai, Hawaii. Generated energy and environmental (weather) data are presented graphically. Explanations of irregularities not attributable to weather are provided.

  10. Study on the activation of styrene-based shape memory polymer by medium-infrared laser light

    SciTech Connect (OSTI)

    Leng Jinsong; Yu Kai; Lan Xin; Zhang Dawei; Liu Yanju

    2010-03-15

    This paper demonstrates the feasibility of shape memory polymer (SMP) activation by medium-infrared laser light. Medium-infrared light is transmitted by an optical fiber embedded in the SMP matrix, and the shape recovery process and temperature distribution are recorded by an infrared camera. Light-induced SMP exhibits potential applications in biomedicines and flexible displays.

  11. T-609: Adobe Acrobat/Reader Memory Corruption Error in CoolType Library Lets Remote Users Execute Arbitrary Code

    Broader source: Energy.gov [DOE]

    A remote user can create a specially crafted PDF file that, when loaded by the target user, will trigger a memory corruption error in the CoolType library and execute arbitrary code on the target system. The code will run with the privileges of the target user.

  12. CX-003164: Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Categorical Exclusion Determination CX-003164: Categorical Exclusion Determination Optimization of Biomass Production Across a Landscape CX(s) Applied: A9 Date: 07262010...

  13. CX-006491: Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Categorical Exclusion Determination CX-006491: Categorical Exclusion Determination Photovoltaic Manufacturing Consortium CX(s) Applied: B3.6 Date: 09012011 Location(s): Florida...

  14. CX-007873: Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Exclusion Determination CX-007873: Categorical Exclusion Determination Northeast Photovoltaic Regional Training Provider CX(s) Applied: A9, A11, B3.14 Date: 01272012...

  15. CX-007867: Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Exclusion Determination CX-007867: Categorical Exclusion Determination Northeast Photovoltaic Regional Training Provider CX(s) Applied: A9, A11, B5.16 Date: 01272012...

  16. Categorical Exclusion Determinations: Office of Energy Efficiency...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Efficiency and Renewable Energy Categorical Exclusion Determinations: Office of Energy Efficiency and Renewable Energy Categorical Exclusion Determinations issued by Energy ...

  17. CX-001016: Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    16: Categorical Exclusion Determination CX-001016: Categorical Exclusion Determination Sustainable Biomass Production Systems-GO88073 Renewal CX(s) Applied: A9 Date: 03012010...

  18. CX-006504: Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    CX-006504.pdf More Documents & Publications CX-006491: Categorical Exclusion Determination CX-100442 Categorical Exclusion Determination Infrared Thermography (IRT) Working Group...

  19. CX-002355: Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Categorical Exclusion Determination CX-002355: Categorical Exclusion Determination Kansas City Power and Light (KCP&L) Green Impact Zone Smart Grid Demonstration CX(s) Applied:...

  20. CX-004247: Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Exclusion Determination CX-004247: Categorical Exclusion Determination Carolina Blue Skies Initiative CX(s) Applied: A1, B5.1 Date: 10142010 Location(s): Indian Trail,...

  1. CX-003861: Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Exclusion Determination CX-003861: Categorical Exclusion Determination Energy Efficiency and Conservation Block Grant (EECBG) DE-EE0000727 City of Prairie Village CX(s)...

  2. CX-011990: Categorical Exclusion Determination | Department of...

    Office of Environmental Management (EM)

    Determination CX-011990: Categorical Exclusion Determination Decherd Electric Vehicle Motor Project CX(s) Applied: B1.31 Date: 06202011 Location(s): Tennessee Offices(s):...

  3. CX-006213: Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Determination CX-006213: Categorical Exclusion Determination Recovery Act: Conducting a 3D Converted Shear Wave Project to Reduce Exploration Risk at Wister, California CX(s)...

  4. CX-008766: Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Determination CX-008766: Categorical Exclusion Determination Asphalt Repair and Concrete Work Activities at the Grand Junction, Colorado, Disposal Site CX(s) Applied: B1.3...

  5. CX-007082: Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Determination CX-007082: Categorical Exclusion Determination Provide Telecommunications Cable to Buildings 6750 and 6753 CX(s) Applied: B1.7 Date: 06092011 Location(s):...

  6. Drift problems in the automatic analysis of gamma-ray spectra using associative memory algorithms

    SciTech Connect (OSTI)

    Olmos, P.; Diaz, J.C.; Perez, J.M.; Aguayo, P. ); Gomez, P.; Rodellar, V. )

    1994-06-01

    Perturbations affecting nuclear radiation spectrometers during their operation frequently spoil the accuracy of automatic analysis methods. One of the problems usually found in practice refers to fluctuations in the spectrum gain and zero, produced by drifts in the detector and nuclear electronics. The pattern acquired in these conditions may be significantly different from that expected with stable instrumentation, thus complicating the identification and quantification of the radionuclides present in it. In this work, the performance of Associative Memory algorithms when dealing with spectra affected by drifts is explored considering a linear energy-calibration function. The formulation of the extended algorithm, constructed to quantify the possible presence of drifts in the spectrometer, is deduced and the results obtained from its application to several practical cases are commented.

  7. Magneto-optical spectroscopy of ferromagnetic shape-memory Ni-Mn-Ga alloy

    SciTech Connect (OSTI)

    Veis, M. Beran, L.; Zahradnik, M.; Antos, R.; Straka, L.; Kopecek, J.; Fekete, L.; Heczko, O.

    2014-05-07

    Magneto-optical properties of single crystal of Ni{sub 50.1}Mn{sub 28.4}Ga{sub 21.5} magnetic shape memory alloy in martensite and austenite phase were systematically studied. Crystal orientation was approximately along (100) planes of parent cubic austenite. At room temperature, the sample was in modulated 10M martensite phase and transformed to cubic austenite at 323?K. Spectral dependence of polar magneto-optical Kerr effect was obtained by generalized magneto-optical ellipsometry with rotating analyzer in the photon energy range from 1.2 to 4?eV, and from room temperature to temperature above the Curie point. The Kerr rotation spectra exhibit prominent features typical for complexes containing Mn atoms. Significant spectral changes during transformation to austenite can be explained by different optical properties caused by changes in density of states near the Fermi energy.

  8. Electronic Structure and Lattice Dynamics of the Magnetic Shape Memory Alloy Co2NiGa

    SciTech Connect (OSTI)

    Siewert, M.; Shapiro, S.; Gruner, M.E.; Dannenberg, A.; Hucht, A.; Xu, G.; Schlagel, D.L.; Lograsso, T.A.; Entel1, P.

    2010-08-20

    In addition to the prototypical Ni-Mn-based Heusler alloys, the Co-Ni-Ga systems have recently been suggested as another prospective materials class for magnetic shape-memory applications. We provide a characterization of the dynamical properties of this material and their relation to the electronic structure within a combined experimental and theoretical approach. This relies on inelastic neutron scattering to obtain the phonon dispersion while first-principles calculations provide the link between dynamical properties and electronic structure. In contrast to Ni{sub 2}MnGa, where the softening of the TA{sub 2} phonon branch is related to Fermi-surface nesting, our results reveal that the respective anomalies are absent in Co-Ni-Ga, in the phonon dispersions as well as in the electronic structure.

  9. Resistive switching phenomena in TiO{sub x} nanoparticle layers for memory applications

    SciTech Connect (OSTI)

    Goren, Emanuelle; Tsur, Yoed; Ungureanu, Mariana; Zazpe, Raul; Rozenberg, Marcelo; Hueso, Luis E.; Casanova, Fčlix; Stoliar, Pablo

    2014-10-06

    Electrical characteristics of a Co/ TiO{sub x}/Co resistive memory device, fabricated by two different methods, are reported. In addition to crystalline TiO{sub 2} layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiO{sub x} nanoparticle layers were fabricated via sol-gel. The different devices have shown different hysteresis loops with a unique crossing point for the sol-gel devices. A simple qualitative model is introduced to describe the different current-voltage behaviours by suggesting only one active metal-oxide interface for the ALD devices and two active metal-oxide interfaces for the sol-gel devices. Furthermore, we show that the resistive switching behaviour could be easily tuned by proper interface engineering and that despite having a similar active material, different fabrication methods can lead to dissimilar resistive switching properties.

  10. Three-dimensional photodissociation in strong laser fields: Memory-kernel effective-mode expansion

    SciTech Connect (OSTI)

    Li Xuan; Thanopulos, Ioannis; Shapiro, Moshe

    2011-03-15

    We introduce a method for the efficient computation of non-Markovian quantum dynamics for strong (and time-dependent) system-bath interactions. The past history of the system dynamics is incorporated by expanding the memory kernel in exponential functions thereby transforming in an exact fashion the non-Markovian integrodifferential equations into a (larger) set of ''effective modes'' differential equations (EMDE). We have devised a method which easily diagonalizes the EMDE, thereby allowing for the efficient construction of an adiabatic basis and the fast propagation of the EMDE in time. We have applied this method to three-dimensional photodissociation of the H{sub 2}{sup +} molecule by strong laser fields. Our calculations properly include resonance-Raman scattering via the continuum, resulting in extensive rotational and vibrational excitations. The calculated final kinetic and angular distribution of the photofragments are in overall excellent agreement with experiments, both when transform-limited pulses and when chirped pulses are used.

  11. Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

    SciTech Connect (OSTI)

    Khan, Asif Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

    2014-06-30

    A spintronic device, called the “strain assisted spin transfer torque (STT) random access memory (RAM),” is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

  12. Contamination due to memory effects in filtered vacuum arc plasma deposition systems

    SciTech Connect (OSTI)

    Martins, D.R.; Salvadori, M.C.; Verdonck, P.; Brown, I.G.

    2002-08-13

    Thin film synthesis by filtered vacuum arc plasma deposition is a widely used technique with a number of important emerging technological applications. A characteristic feature of the method is that during the deposition process not only is the substrate coated by the plasma, but the plasma gun itself and the magnetic field coil and/or vacuum vessel section constituting the macroparticle filter are also coated to some extent. If then the plasma gun cathode is changed to a new element, there can be a contamination of the subsequent film deposition by sputtering from various parts of the system of the previous coating species. We have experimentally explored this effect and compared our results with theoretical estimates of sputtering from the SRIM (Stopping and Range of Ions in Matter) code. We find film contamination of order 10-4 - 10-3, and the memory of the prior history of the deposition hardware can be relatively long-lasting.

  13. Developement of 3D Vertically Integrated Pattern Recognition Associative Memory (VIPRAM)

    SciTech Connect (OSTI)

    Deputch, G.; Hoff, J.; Lipton, R.; Liu, T.; Olsen, J.; Ramberg, E.; Wu, Jin-Yuan; Yarema, R.; Shochet, M.; Tang, F.; Demarteau, M.; /Argonne /INFN, Padova

    2011-04-13

    Many next-generation physics experiments will be characterized by the collection of large quantities of data, taken in rapid succession, from which scientists will have to unravel the underlying physical processes. In most cases, large backgrounds will overwhelm the physics signal. Since the quantity of data that can be stored for later analysis is limited, real-time event selection is imperative to retain the interesting events while rejecting the background. Scaling of current technologies is unlikely to satisfy the scientific needs of future projects, so investments in transformational new technologies need to be made. For example, future particle physics experiments looking for rare processes will have to address the demanding challenges of fast pattern recognition in triggering as detector hit density becomes significantly higher due to the high luminosity required to produce the rare processes. In this proposal, we intend to develop hardware-based technology that significantly advances the state-of-the-art for fast pattern recognition within and outside HEP using the 3D vertical integration technology that has emerged recently in industry. The ultimate physics reach of the LHC experiments will crucially depend on the tracking trigger's ability to help discriminate between interesting rare events and the background. Hardware-based pattern recognition for fast triggering on particle tracks has been successfully used in high-energy physics experiments for some time. The CDF Silicon Vertex Trigger (SVT) at the Fermilab Tevatron is an excellent example. The method used there, developed in the 1990's, is based on algorithms that use a massively parallel associative memory architecture to identify patterns efficiently at high speed. However, due to much higher occupancy and event rates at the LHC, and the fact that the LHC detectors have a much larger number of channels in their tracking detectors, there is an enormous challenge in implementing pattern recognition for a track trigger, requiring about three orders of magnitude more associative memory patterns than what was used in the original CDF SVT. Significant improvement in the architecture of associative memory structures is needed to run fast pattern recognition algorithms of this scale. We are proposing the development of 3D integrated circuit technology as a way to implement new associative memory structures for fast pattern recognition applications. Adding a 'third' dimension to the signal processing chain, as compared to the two-dimensional nature of printed circuit boards, Field Programmable Gate Arrays (FPGAs), etc., opens up the possibility for new architectures that could dramatically enhance pattern recognition capability. We are currently performing preliminary design work to demonstrate the feasibility of this approach. In this proposal, we seek to develop the design and perform the ASIC engineering necessary to realize a prototype device. While our focus here is on the Energy Frontier (e.g. the LHC), the approach may have applications in experiments in the Intensity Frontier and the Cosmic Frontier as well as other scientific and medical projects. In fact, the technique that we are proposing is very generic and could have wide applications far beyond track trigger, both within and outside HEP.

  14. Crystal face temperature determination means

    DOE Patents [OSTI]

    Nason, Donald O. (Goleta, CA); Burger, Arnold (Nashville, TN)

    1994-01-01

    An optically transparent furnace (10) having a detection apparatus (29) with a pedestal (12) enclosed in an evacuated ampule (16) for growing a crystal (14) thereon. Temperature differential is provided by a source heater (20), a base heater (24) and a cold finger (26) such that material migrates from a polycrystalline source material (18) to grow the crystal (14). A quartz halogen lamp (32) projects a collimated beam (30) onto the crystal (14) and a reflected beam (34) is analyzed by a double monochromator and photomultiplier detection spectrometer (40) and the detected peak position (48) in the reflected energy spectrum (44) of the reflected beam (34) is interpreted to determine surface temperature of the crystal (14).

  15. Categorical Exclusion Determinations | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Categorical Exclusion Determinations Categorical Exclusion Determinations This memorandum provides a reminder of the requirements for applying categorical exclusions pursuant to the Department of Energy's (DOE's) NEPA regulations and guidance for simple recordkeeping of such determinations. PDF icon G-DOE-CXDeterminations.pdf More Documents & Publications Implementation Guidance for the DOE Policy on Documentation and Online Posting of Categorical Exclusion Determinations Lessons Learned

  16. Total ionizing dose effect of ?-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory

    SciTech Connect (OSTI)

    Fang, Runchen; Yu, Shimeng; Gonzalez Velo, Yago; Chen, Wenhao; Holbert, Keith E.; Kozicki, Michael N.; Barnaby, Hugh

    2014-05-05

    The total ionizing dose (TID) effect of gamma-ray (?-ray) irradiation on HfOx based resistive random access memory was investigated by electrical and material characterizations. The memory states can sustain TID level ?5.2 Mrad (HfO{sub 2}) without significant change in the functionality or the switching characteristics under pulse cycling. However, the stability of the filament is weakened after irradiation as memory states are more vulnerable to flipping under the electrical stress. X-ray photoelectron spectroscopy was performed to ascertain the physical mechanism of the stability degradation, which is attributed to the Hf-O bond breaking by the high-energy ?-ray exposure.

  17. Ballistic projectile trajectory determining system

    DOE Patents [OSTI]

    Karr, T.J.

    1997-05-20

    A computer controlled system determines the three-dimensional trajectory of a ballistic projectile. To initialize the system, predictions of state parameters for a ballistic projectile are received at an estimator. The estimator uses the predictions of the state parameters to estimate first trajectory characteristics of the ballistic projectile. A single stationary monocular sensor then observes the actual first trajectory characteristics of the ballistic projectile. A comparator generates an error value related to the predicted state parameters by comparing the estimated first trajectory characteristics of the ballistic projectile with the observed first trajectory characteristics of the ballistic projectile. If the error value is equal to or greater than a selected limit, the predictions of the state parameters are adjusted. New estimates for the trajectory characteristics of the ballistic projectile are made and are then compared with actual observed trajectory characteristics. This process is repeated until the error value is less than the selected limit. Once the error value is less than the selected limit, a calculator calculates trajectory characteristics such a the origin and destination of the ballistic projectile. 8 figs.

  18. Ballistic projectile trajectory determining system

    DOE Patents [OSTI]

    Karr, Thomas J. (Alamo, CA)

    1997-01-01

    A computer controlled system determines the three-dimensional trajectory of a ballistic projectile. To initialize the system, predictions of state parameters for a ballistic projectile are received at an estimator. The estimator uses the predictions of the state parameters to estimate first trajectory characteristics of the ballistic projectile. A single stationary monocular sensor then observes the actual first trajectory characteristics of the ballistic projectile. A comparator generates an error value related to the predicted state parameters by comparing the estimated first trajectory characteristics of the ballistic projectile with the observed first trajectory characteristics of the ballistic projectile. If the error value is equal to or greater than a selected limit, the predictions of the state parameters are adjusted. New estimates for the trajectory characteristics of the ballistic projectile are made and are then compared with actual observed trajectory characteristics. This process is repeated until the error value is less than the selected limit. Once the error value is less than the selected limit, a calculator calculates trajectory characteristics such a the origin and destination of the ballistic projectile.

  19. Vitrification Melter Waste Incidental to Reprocessing Determination |

    Office of Environmental Management (EM)

    Department of Energy Vitrification Melter Waste Incidental to Reprocessing Determination Vitrification Melter Waste Incidental to Reprocessing Determination DOE Manual 435.1-1 Waste-Incidental-To-Reprocessing Determination for the West Valley Demonstration Project Vitrification Melter PDF icon Vitrification Melter Waste Incidental to Reprocessing Determination More Documents & Publications Department of Energy Manual 435.1-1 Waste Incidental To Reprocessing Determination For The West

  20. 2015 Secretarial Determination | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Secretarial Determination 2015 Secretarial Determination On May 1, 2015, the Secretary of Energy determined that continued uranium transfers for cleanup services at the Portsmouth Gaseous Diffusion Plant and for down-blending of highly-enriched uranium to low-enriched uranium will not have an adverse material impact on the domestic uranium mining, conversion, or enrichment industry ("2015 Secretarial Determination"). This Determination covers continued transfers at the rates specified

  1. Magnetic field-induced phase transformation in NiMnCoIn magnetic shape memory alloys - a new actuation mechanism with large work output.

    SciTech Connect (OSTI)

    Karaca, H. E.; Karaman, I.; Basaran, B.; Ren, Y.; Chumlyakov, Y. I.; Maier, H. J.; X-Ray Science Division; Texsas A&M Univ.; Univ. of Kentucky; Siberian Physical-Technical Inst.; Univ. of Paderborn

    2009-04-09

    Magnetic shape memory alloys (MSMAs) have recently been developed into a new class of functional materials that are capable of magnetic-field-induced actuation, mechanical sensing, magnetic refrigeration, and energy harvesting. In the present work, the magnetic field-induced martensitic phase transformation (FIPT) in Ni{sub 45}Mn{sub 36.5}Co{sub 5}In{sub 13.5} MSMA single crystals is characterized as a new actuation mechanism with potential to result in ultra-high actuation work outputs. The effects of the applied magnetic field on the transformation temperatures, magnetization, and superelastic response are investigated. The magnetic work output of NiMnCoIn alloys is determined to be more than 1 MJ m{sup -3} per Tesla, which is one order of magnitude higher than that of the most well-known MSMAs, i.e., NiMnGa alloys. In addition, the work output of NiMnCoIn alloys is orientation independent, potentially surpassing the need for single crystals, and not limited by a saturation magnetic field, as opposed to NiMnGa MSMAs. Experimental and theoretical transformation strains and magnetostress levels are determined as a function of crystal orientation. It is found that [111]-oriented crystals can demonstrate a magnetostress level of 140 MPa T{sup -1} with 1.2% axial strain under compression. These field-induced stress and strain levels are significantly higher than those from existing piezoelectric and magnetostrictive actuators. A thermodynamical framework is introduced to comprehend the magnetic energy contributions during FIPT. The present work reveals that the magnetic FIPT mechanism is promising for magnetic actuation applications and provides new opportunities for applications requiring high actuation work-outputs with relatively large actuation frequencies. One potential issue is the requirement for relatively high critical magnetic fields and field intervals (1.5-3 T) for the onset of FIPT and for reversible FIPT, respectively.

  2. Intermediate photovoltaic system application experiment operational performance report. Volume 5. For G. N. Wilcox Memorial Hospital, Kauai, Hawaii for September 1982

    SciTech Connect (OSTI)

    Not Available

    1983-01-01

    Presented are the data accumulated during September 1982 at the intermediate photovoltaic project at G.N. Wilcox Memorial Hospital, Kauai, Hawaii. Generated energy and environmental (weather) data are presented graphically. Explanations of irregularities not attributable to weather are provided.

  3. Intermediate photovoltaic system application experiment operational performance report for G. N. Wilcox Memorial Hospital, Kauai, Hawaii for October 1982. Volume VI

    SciTech Connect (OSTI)

    Not Available

    1983-01-01

    Presented are the data accumulated during October 1982 at the intermediate project at G.N. Wilcox Memorial Hospital, Kauai, Hawaii. Generated energy and environmental (weather) data are presented graphically. Explanations of irregularities not attributable to weather are provided.

  4. Intermediate photovoltaic system application experiment operational performance report. Volume 8. For G. N. Wilcox Memorial Hospital, Kauai, Hawaii for December 1982

    SciTech Connect (OSTI)

    Not Available

    1983-03-01

    Presented are the data accumulated during December 1982 at the intermediate photovoltaic project at G. N. Wilcox Memorial Hospital, Kauai, Hawaii. Generated energy and environmental (weather) data are presented graphiclaly. Explanations of irregularities not attributable to weather are provided.

  5. A new variable-resolution associative memory for high energy physics

    SciTech Connect (OSTI)

    Annovi, A.; Amerio, S.; Beretta, M.; Bossini, E.; Crescioli, F.; Dell'Orso, M.; Giannetti, P.; Hoff, J.; Liu, T.; Magalotti, D.; Piendibene, M.; Sacco, I.; Schoening, A.; Soltveit, H. K.; Stabile, A.; Tripiccione, R.; Liberali, V.; Vitillo, R.; Volpi, G.

    2011-07-01

    We describe an important advancement for the Associative Memory device (AM). The AM is a VLSI processor for pattern recognition based on Content Addressable Memory (CAM) architecture. The AM is optimized for on-line track finding in high-energy physics experiments. Pattern matching is carried out by finding track candidates in coarse resolution 'roads'. A large AM bank stores all trajectories of interest, called 'patterns', for a given detector resolution. The AM extracts roads compatible with a given event during detector read-out. Two important variables characterize the quality of the AM bank: its 'coverage' and the level of fake roads. The coverage, which describes the geometric efficiency of a bank, is defined as the fraction of tracks that match at least one pattern in the bank. Given a certain road size, the coverage of the bank can be increased just adding patterns to the bank, while the number of fakes unfortunately is roughly proportional to the number of patterns in the bank. Moreover, as the luminosity increases, the fake rate increases rapidly because of the increased silicon occupancy. To counter that, we must reduce the width of our roads. If we decrease the road width using the current technology, the system will become very large and extremely expensive. We propose an elegant solution to this problem: the 'variable resolution patterns'. Each pattern and each detector layer within a pattern will be able to use the optimal width, but we will use a 'don't care' feature (inspired from ternary CAMs) to increase the width when that is more appropriate. In other words we can use patterns of variable shape. As a result we reduce the number of fake roads, while keeping the efficiency high and avoiding excessive bank size due to the reduced width. We describe the idea, the implementation in the new AM design and the implementation of the algorithm in the simulation. Finally we show the effectiveness of the 'variable resolution patterns' idea using simulated high occupancy events in the ATLAS detector. (authors)

  6. Enhanced magnetic hysteresis in Ni-Mn-Ga single crystal and its influence on magnetic shape memory effect

    SciTech Connect (OSTI)

    Heczko, O. Drahokoupil, J.; Straka, L.

    2015-05-07

    Enhanced magnetic hysteresis due to boron doping in combination with magnetic shape memory effect in Ni-Mn-Ga single crystal results in new interesting functionality of magnetic shape memory (MSM) alloys such as mechanical demagnetization. In Ni{sub 50.0}Mn{sub 28.5}Ga{sub 21.5} single crystal, the boron doping increased magnetic coercivity from few Oe to 270?Oe while not affecting the transformation behavior and 10?M martensite structure. However, the magnetic field needed for MSM effect also increased in doped sample. The magnetic behavior is compared to undoped single crystal of similar composition. The evidence from the X-ray diffraction, magnetic domain structure, magnetization loops, and temperature evolution of the magnetic coercivity points out that the enhanced hysteresis is caused by stress-induced anisotropy.

  7. Study of Martensitic Phase transformation in a NiTiCu Thin Film Shape Memory Alloy Using Photoelectron Emission Microscopy

    SciTech Connect (OSTI)

    Cai, Mingdong; Langford, Stephen C.; Wu, Maggie J.; Huang, W. M.; Xiong, Gang; Droubay, Timothy C.; Joly, Alan G.; Beck, Kenneth; Hess, Wayne P.; Dickinson, J. T.

    2007-01-01

    The thermally-induced martensitic phase transformation in a polycrystalline NiTiCu thin film shape memory alloy was probed by photoelectron emission microscopy (PEEM). In situ PEEM images reveal distinct changes in microstructure and photoemission intensity at the phase transition temperatures. In particular, images of the low temperature, martensite phase are brighter than that of the high temperature, austenite phase, due to the relatively lower work function of the martensite. Ultra-violet photoelectron spectroscopy shows that the effective work function changes by about 0.16 eV during thermal cycling. In situ PEEM images also show that the network of trenches observed on the room temperature film disappear suddenly during heating and reappear suddenly during subsequent cooling. These trenches are also characterized by atomic force microscopy at selected temperatures. We describe implications of these observations with respect to the spatial distribution of phases during thermal cycling in this thin film shape memory alloy.

  8. Structure Analysis of a Precipitate Phase in an Ni-Rich High Temperature NiTiHf Shape Memory Alloy

    SciTech Connect (OSTI)

    Yang, Fan; Coughlin, D. R.; Phillips, Patrick J.; Yang, L.; Devaraj, Arun; Kovarik, Libor; Noebe, Ronald D.; Mills, M. J.

    2013-03-22

    Thermal aging of the high temperature shape memory alloy 50.3Ni-29.7Ti-20Hf (at.%) introduces a novel precipitate phase, which plays an important role in improving shape memory properties. The precipitate phase was investigated by conventional electron diffraction, high resolution scanning transmission electron microscopy (STEM) and three dimensional atom probe tomography. An unrelaxed orthorhombic atomic structural model is proposed based on these observations. This model was subsequently relaxed by ab initio calculations. As a result of the relaxation, atom shuffle displacements occur, which in turn yields improved agreement with the STEM images. The relaxed structure, which is termed the “H-phase”, has also been verified to be thermodymanically stable at 0 K.

  9. Set statistics in conductive bridge random access memory device with Cu/HfO{sub 2}/Pt structure

    SciTech Connect (OSTI)

    Zhang, Meiyun; Long, Shibing Wang, Guoming; Xu, Xiaoxin; Li, Yang; Liu, Qi; Lv, Hangbing; Liu, Ming; Lian, Xiaojuan; Miranda, Enrique; Suńé, Jordi

    2014-11-10

    The switching parameter variation of resistive switching memory is one of the most important challenges in its application. In this letter, we have studied the set statistics of conductive bridge random access memory with a Cu/HfO{sub 2}/Pt structure. The experimental distributions of the set parameters in several off resistance ranges are shown to nicely fit a Weibull model. The Weibull slopes of the set voltage and current increase and decrease logarithmically with off resistance, respectively. This experimental behavior is perfectly captured by a Monte Carlo simulator based on the cell-based set voltage statistics model and the Quantum Point Contact electron transport model. Our work provides indications for the improvement of the switching uniformity.

  10. Haier: Noncompliance Determination (2011-SE-1408) | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Determination to Haier America Trading, L.L.C. finding that model number HNCM070, a chest freezer, does not comport with the energy conservation standards. DOE determined the...

  11. CX-100317 Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    7 Categorical Exclusion Determination CX-100317 Categorical Exclusion Determination Solar Hot Water Project in Greenburgh, NY Award Number: DE-EE0003193 CX(s) Applied: B5.16...

  12. CX-002291: Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Exclusion Determination CX-002291: Categorical Exclusion Determination Columbia Southern Power (AEP) Ohio Smart Grid Demonstration Project CX(s) Applied: B3.6, A1, A9, A11, B1.7,...

  13. CX-004531: Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Determination CX-004531: Categorical Exclusion Determination Surprise Valley Multiple Use Geothermal Development CX(s) Applied: A9, B3.1, B5.12 Date: 11242010 Location(s):...

  14. CX-002586: Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    86: Categorical Exclusion Determination CX-002586: Categorical Exclusion Determination Maine-County-Cumberland CX(s) Applied: B1.32, B2.5, A9, A11, B5.1 Date: 04292010...

  15. CX-100322 Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Exclusion Determination CX-100322 Categorical Exclusion Determination Plug and Play Photovoltaics for American Homes Award Number: DE-EE0006035 CX(s) Applied: A9, B3.6, B5.15...

  16. CX-100226 Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Categorical Exclusion Determination CX-100226 Categorical Exclusion Determination Pala Fire Station Solar Project Award Number: DE-EE0006951 CX(s) Applied: A9, B5.16 Tribal Energy...

  17. CX-100193 Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Exclusion Determination CX-100193 Categorical Exclusion Determination Installation of Solar Panels at Municipal Owned Facilities Award Number: DE-EE0003195 CX(s) Applied: B5.1...

  18. CX-100397 Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Determination CX-100397 Categorical Exclusion Determination Tonto Apache Tribe Solar, Phase II Award Number: DE- EE-0006946 CX(s) Applied: A9, B5.16 Indian Energy Date: 1102...

  19. CX-100228 Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Determination CX-100228 Categorical Exclusion Determination Tonto Apache Solar - Phase II Award Number: DE-EE0006946 CX(s) Applied: A9, B5.16, B5.17 Tribal Energy Program...

  20. CX-009527: Categorical Exclusion Determination | Department of...

    Office of Environmental Management (EM)

    Determination CX-009527: Categorical Exclusion Determination WVDP-2012-02 Routine Maintenance CX(s) Applied: B1.3 Date: 12202012 Location(s): New York Offices(s): West Valley...

  1. Categorical Exclusion Determinations: Energy Technology Engineering Center

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    | Department of Energy Energy Technology Engineering Center Categorical Exclusion Determinations: Energy Technology Engineering Center Categorical Exclusion Determinations issued by Energy Technology Engineering Center. DOCUMENTS AVAILABLE FOR DOWNLOAD No downloads found for this office.

  2. Categorical Exclusion Determinations: Health, Safety, and Security |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Health, Safety, and Security Categorical Exclusion Determinations: Health, Safety, and Security Categorical Exclusion Determinations issued by Health, Safety, and Security. DOCUMENTS AVAILABLE FOR DOWNLOAD No downloads found for this office.

  3. Categorical Exclusion Determinations: Intelligence and Counterintelligence

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    | Department of Energy Intelligence and Counterintelligence Categorical Exclusion Determinations: Intelligence and Counterintelligence Categorical Exclusion Determinations issued by Intelligence and Counterintelligence. DOCUMENTS AVAILABLE FOR DOWNLOAD No downloads found for this office.

  4. CX-003838: Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Exclusion Determination CX-003838: Categorical Exclusion Determination Demolition of the X-605 H Booster Pump House, X-605I Chlorinator, and X-605 Diesel Generator Buildings CX(s)...

  5. CX-009154: Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    54: Categorical Exclusion Determination CX-009154: Categorical Exclusion Determination Scale-up of Novel Low-Cost Carbon Fibers Leading to High-Volume Commercial Launch CX(s)...

  6. Categorical Exclusion Determinations: Western Area Power Administration |

    Office of Environmental Management (EM)

    Department of Energy Administration Categorical Exclusion Determinations: Western Area Power Administration Categorical Exclusion Determinations issued by Western Area Power Administration. DOCUMENTS AVAILABLE FOR DOWNLOAD No downloads found for this office.

  7. CX-100242 Categorical Exclusion Determination | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Determination CX-100242 Categorical Exclusion Determination High Efficiency Solid-State Heat Pump Module Award Number: DE-EE0007044 CX(s) Applied: A9, B1.13, B3.6 Building...

  8. Categorical Exclusion Determinations: Alabama | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Alabama Categorical Exclusion Determinations: Alabama Location Categorical Exclusion Determinations issued for actions in Alabama. DOCUMENTS AVAILABLE FOR DOWNLOAD October 28, 2015 CX-100394 Categorical Exclusion Determination ARRA Financing Program - AlabamaSAVES Award Number: DE- EE-0004122 CX(s) Applied: B5.16 Weatherization & Intergovernmental Programs Office Date: 10/28/2015 Location(s): AL Office(s): Golden Field Office September 10, 2015 CX-100360 Categorical Exclusion Determination

  9. Categorical Exclusion Determinations: Alaska | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Alaska Categorical Exclusion Determinations: Alaska Location Categorical Exclusion Determinations issued for actions in Alaska. DOCUMENTS AVAILABLE FOR DOWNLOAD December 17, 2015 CX-100421 Categorical Exclusion Determination Remote Alaskan Communities Notice of Technical Assistance FOA Number: DE-FOA-0001479 CX(s) Applied: B5.1, B1.31 Office of Strategic Programs Date: 12/17/2015 Location(s): Alaska Office(s): Golden Field Office November 13, 2014 CX-100116 Categorical Exclusion Determination

  10. Categorical Exclusion Determinations: Arizona | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Arizona Categorical Exclusion Determinations: Arizona Location Categorical Exclusion Determinations issued for actions in Arizona. DOCUMENTS AVAILABLE FOR DOWNLOAD November 2, 2015 CX-100397 Categorical Exclusion Determination Tonto Apache Tribe Solar, Phase II Award Number: DE- EE-0006946 CX(s) Applied: A9, B5.16 Indian Energy Date: 11/02/2015 Location(s): AZ Office(s): Golden Field Office November 2, 2015 CX-100396 Categorical Exclusion Determination Regional Algal Feedstock Testbed

  11. Categorical Exclusion Determinations: Arkansas | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Arkansas Categorical Exclusion Determinations: Arkansas Location Categorical Exclusion Determinations issued for actions in Arkansas. DOCUMENTS AVAILABLE FOR DOWNLOAD June 4, 2015 CX-100263 Categorical Exclusion Determination Akutan Geothermal Project Award Number: DE-EE0000329 CX(s) Applied: A9, B3.1 Geothermal Technologies Office Date: 06/04/2015 Location(s): AK Office(s): Golden Field Office February 2, 2015 CX-100183 Categorical Exclusion Determination Energy Efficiency Upgrades for the

  12. Categorical Exclusion Determinations: Environmental Management | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Energy Categorical Exclusion Determinations: Environmental Management Categorical Exclusion Determinations issued by Environmental Management. DOCUMENTS AVAILABLE FOR DOWNLOAD October 13, 2011 CX-006923: Categorical Exclusion Determination Design and Install a Modification to the HB-Line Exhaust Fan Dampers CX(s) Applied: B2.5 Date: 10/13/2011 Location(s): Aiken, South Carolina Office(s): Environmental Management October 13, 2011 CX-006920: Categorical Exclusion Determination Install

  13. Categorical Exclusion Determinations: Hawaii | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Hawaii Categorical Exclusion Determinations: Hawaii Location Categorical Exclusion Determinations issued for actions in Hawaii. DOCUMENTS AVAILABLE FOR DOWNLOAD October 19, 2015 CX-100387 Categorical Exclusion Determination Reducing Soft Costs through Hardware Innovation - Phase II Award Number: DE- EE-0007199 CX(s) Applied: A9, B3.6 Solar Energy Technologies Office Date: 10/19/2015 Location(s): HI Office(s): Golden Field Office September 14, 2015 CX-100372 Categorical Exclusion Determination

  14. Categorical Exclusion Determinations: Idaho Operations Office | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Energy Idaho Operations Office Categorical Exclusion Determinations: Idaho Operations Office Categorical Exclusion Determinations issued by Idaho Operations Office. DOCUMENTS AVAILABLE FOR DOWNLOAD March 24, 2014 CX-012097: Categorical Exclusion Determination Microgrid Demonstration Project CX(s) Applied: B5.15 Date: 03/24/2014 Location(s): Idaho Offices(s): Idaho Operations Office January 22, 2014 CX-011843: Categorical Exclusion Determination Enhanced Shielding Performance of High Level

  15. Categorical Exclusion Determinations: Iowa | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Iowa Categorical Exclusion Determinations: Iowa Location Categorical Exclusion Determinations issued for actions in Iowa. DOCUMENTS AVAILABLE FOR DOWNLOAD September 15, 2014 CX-100055 Categorical Exclusion Determination Hexcrete Tower for Harvesting Wind Energy at Taller Hub Heights Award Number: DE-EE0006737 CX(s) Applied: A9, B3.6 Date: 09/15/2014 Location(s): IA Office(s): Golden Field Office September 15, 2014 CX-100059 Categorical Exclusion Determination Pilot-Scale Mixotrophic Algae

  16. Categorical Exclusion Determinations: Kansas | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Kansas Categorical Exclusion Determinations: Kansas Location Categorical Exclusion Determinations issued for actions in Kansas. DOCUMENTS AVAILABLE FOR DOWNLOAD January 26, 2015 CX-100179 Categorical Exclusion Determination Wind Energy Technology Project and Renewable Energy Center of Excellence Award Number: DE-FG36-08GO88013 CX(s) Applied: B5.18 Wind Program Date: 01/26/2015 Location(s): KS Office(s): Golden Field Office September 17, 2013 CX-010938: Categorical Exclusion Determination Midwest

  17. Categorical Exclusion Determinations: Kentucky | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Kentucky Categorical Exclusion Determinations: Kentucky Location Categorical Exclusion Determinations issued for actions in Kentucky. DOCUMENTS AVAILABLE FOR DOWNLOAD December 1, 2014 CX-100119 Categorical Exclusion Determination No Heat Spray Drying Technology Award Number: DE-EE0005774 CX(s) Applied: A9, B3.6 Date: 12/01/2014 Location(s): KY Office(s): Golden Field Office December 5, 2013 CX-011735: Categorical Exclusion Determination UHV Technologies, Inc. - Low Cost High Throughput In-Line

  18. Categorical Exclusion Determinations: Legacy Management | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Legacy Management Categorical Exclusion Determinations: Legacy Management Categorical Exclusion Determinations issued by Legacy Mangement. DOCUMENTS AVAILABLE FOR DOWNLOAD August 26, 2014 CX-012726: Categorical Exclusion Determination Installation and Redeveloment of Groundwater Monitoring Wells at the4 Salmon, Mississippi Site CX(s) Applied: B3.1 Date: 41877 Location(s): Mississippi Offices(s): Legacy Management July 10, 2014 CX-012400: Categorical Exclusion Determination Vapor

  19. Categorical Exclusion Determinations: Louisiana | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Louisiana Categorical Exclusion Determinations: Louisiana Location Categorical Exclusion Determinations issued for actions in Louisiana. DOCUMENTS AVAILABLE FOR DOWNLOAD February 18, 2015 CX-100185 Categorical Exclusion Determination Pump Station Improvements (Transcontinental) Award Number: DE-EE0006212 CX(s) Applied: B5.1, B2.5 State Energy Program Date: 02/18/2015 Location(s): LA Office(s): Golden Field Office February 18, 2015 CX-100186 Categorical Exclusion Determination Pump Station

  20. Categorical Exclusion Determinations: Maine | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Maine Categorical Exclusion Determinations: Maine Location Categorical Exclusion Determinations issued for actions in Maine. DOCUMENTS AVAILABLE FOR DOWNLOAD April 29, 2015 CX-100230 Categorical Exclusion Determination Advanced Energy Harvesting Control Schemes for Marine Renewable Energy Devices Award Number: DE-EE0006397 CX(s) Applied: B5.25 Water Program Date: 04/29/15 Location(s): ME Office(s): Golden Field Office March 23, 2015 CX-100200 Categorical Exclusion Determination Stereo-Optic High