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they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Determination of energy scales in few-electron double quantum dots  

SciTech Connect (OSTI)

The capacitive couplings between gate-defined quantum dots and their gates vary considerably as a function of applied gate voltages. The conversion between gate voltages and the relevant energy scales is usually performed in a regime of rather symmetric dot-lead tunnel couplings strong enough to allow direct transport measurements. Unfortunately, this standard procedure fails for weak and possibly asymmetric tunnel couplings, often the case in realistic devices. We have developed methods to determine the gate voltage to energy conversion accurately in the different regimes of dot-lead tunnel couplings and demonstrate strong variations of the conversion factors. Our concepts can easily be extended to triple quantum dots or even larger arrays.

Taubert, D.; Ludwig, S. [Center for NanoScience and Fakultaet fuer Physik, Ludwig-Maximilians-Universitaet Muenchen, Geschwister-Scholl-Platz 1, D-80539 Muenchen (Germany); Schuh, D. [Institut fuer Experimentelle Physik, Universitaet Regensburg, D-93040 Regensburg (Germany); Wegscheider, W. [Laboratory for Solid State Physics, ETH Zuerich, CH-8093 Zuerich (Switzerland)

2011-12-15T23:59:59.000Z

2

A quantum dot heterojunction photodetector  

E-Print Network [OSTI]

This thesis presents a new device architecture for photodetectors utilizing colloidally grown quantum dots as the principle photo-active component. We implement a thin film of cadmium selenide (CdSe) quantum dot sensitizers, ...

Arango, Alexi Cosmos, 1975-

2005-01-01T23:59:59.000Z

3

Quantum dot device tunable from single to triple dot system  

SciTech Connect (OSTI)

We present a lateral quantum dot device which has a tunable number of quantum dots. Depending on easily tunable gate voltages, one, two or three quantum dots are found. They are investigated in transport and charge detection.

Rogge, M. C.; Haug, R. J. [Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstrasse 2, 30167 Hannover (Germany); Pierz, K. [Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany)

2013-12-04T23:59:59.000Z

4

Nontoxic quantum dot research improves solar cells  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Nontoxic quantum dot research improves solar cells Nontoxic quantum dot research improves solar cells Solar cells made with low-cost, nontoxic copper-based quantum dots can achieve...

5

All inorganic colloidal quantum dot LEDs  

E-Print Network [OSTI]

This thesis presents the first colloidal quantum dot light emitting devices (QD-LEDs) with metal oxide charge transport layers. Colloidally synthesized quantum dots (QDs) have shown promise as the active material in ...

Wood, Vanessa Claire

2007-01-01T23:59:59.000Z

6

Enhanced performance of quantum dot solar cells based on type II quantum dots  

SciTech Connect (OSTI)

The characteristics of quantum dot solar cells (QDSCs) based on type II QDs are investigated theoretically. Based on a drift-diffusion model, we obtained a much higher open circuit voltage (V{sub oc}) as well as conversion efficiency in a type II QDSC, compared to type I QDSCs. The improved V{sub oc} and efficiency are mainly attributed to the much longer Auger recombination lifetime in type II QDs. Moreover, the influence of the carrier lifetime on devices' performance is discussed and clarified. In addition, an explicit criterion to determine the role of quantum dots in solar cells is put forward.

Xu, Feng; Yang, Xiao-Guang; Luo, Shuai; Lv, Zun-Ren; Yang, Tao, E-mail: tyang@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

2014-10-07T23:59:59.000Z

7

Modeling of the quantum dot filling and the dark current of quantum dot infrared photodetectors  

SciTech Connect (OSTI)

A generalized drift-diffusion model for the calculation of both the quantum dot filling profile and the dark current of quantum dot infrared photodetectors is proposed. The confined electrons inside the quantum dots produce a space-charge potential barrier between the two contacts, which controls the quantum dot filling and limits the dark current in the device. The results of the model reasonably agree with a published experimental work. It is found that increasing either the doping level or the temperature results in an exponential increase of the dark current. The quantum dot filling turns out to be nonuniform, with a dot near the contacts containing more electrons than one in the middle of the device where the dot occupation approximately equals the number of doping atoms per dot, which means that quantum dots away from contacts will be nearly unoccupied if the active region is undoped.

Ameen, Tarek A.; El-Batawy, Yasser M.; Abouelsaood, A. A. [Department of Engineering Mathematics and Physics, Faculty of Engineering, Cairo University, Giza (Egypt)

2014-02-14T23:59:59.000Z

8

Quantum Dot Light Emitting Diode  

SciTech Connect (OSTI)

The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m2, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.

Keith Kahen

2008-07-31T23:59:59.000Z

9

Quantum Dot Light Emitting Diode  

SciTech Connect (OSTI)

The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m{sup 2}, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.

Kahen, Keith

2008-07-31T23:59:59.000Z

10

Temperature-Dependent Electron Transport in Quantum Dot Photovoltaics  

E-Print Network [OSTI]

cell efficiency milestones. Quantum dot photovoltaics is inphotovoltaics provide the potential to create high-efficiencycell efficiency milestones. Quantum dot photovoltaics is in

Padilla, Derek

2013-01-01T23:59:59.000Z

11

Temperature-Dependent Electron Transport in Quantum Dot Photovoltaics  

E-Print Network [OSTI]

4.4 Photovoltaics in Practice . . . . . . . . . . . . . .milestones. Quantum dot photovoltaics is in the bottom-rightIN QUANTUM DOT PHOTOVOLTAICS A dissertation submitted in

Padilla, Derek

2013-01-01T23:59:59.000Z

12

Dynamics of Quantum Dot Photonic Crystal Lasers  

E-Print Network [OSTI]

Quantum dot photonic crystal membrane lasers were fabricated and the large signal modulation characteristics were studied. We find that the modulation characteristics of quantum dot lasers can be significantly improved using cavities with large spontaneous emission coupling factor. Our experiments show, and simulations confirm, that the modulation rate is limited by the rate of carrier capture into the dots to around 30GHz in our present system.

Bryan Ellis; Ilya Fushman; Dirk Englund; Bingyang Zhang; Yoshihisa Yamamoto; Jelena Vuckovic

2007-03-07T23:59:59.000Z

13

Thick-shell nanocrystal quantum dots  

DOE Patents [OSTI]

Colloidal nanocrystal quantum dots comprising an inner core having an average diameter of at least 1.5 nm and an outer shell, where said outer shell comprises multiple monolayers, wherein at least 30% of the quantum dots have an on-time fraction of 0.80 or greater under continuous excitation conditions for a period of time of at least 10 minutes.

Hollingsworth, Jennifer A. (Los Alamos, NM); Chen, Yongfen (Eugene, OR); Klimov, Victor I. (Los Alamos, NM); Htoon, Han (Los Alamos, NM); Vela, Javier (Los Alamos, NM)

2011-05-03T23:59:59.000Z

14

Phonon Mediated Off-Resonant Quantum Dot-Cavity Coupling  

E-Print Network [OSTI]

A theoretical model for the phonon-mediated off-resonant coupling between a quantum dot and a cavity, under resonant excitation of the quantum dot, is presented. We show that the coupling is caused by electron-phonon interaction in the quantum dot and is enhanced by the cavity. We analyze recently observed resonant quantum dot spectroscopic data by our theoretical model.

Arka Majumdar; Yiyang Gong; Erik D. Kim; Jelena Vuckovic

2010-12-14T23:59:59.000Z

15

Semiconductor Quantum Dots and Quantum Dot Arrays and Applications of Multiple Exciton Generation to Third-Generation Photovoltaic Solar Cells  

E-Print Network [OSTI]

to Third-Generation Photovoltaic Solar Cells A. J. Nozik,*,, M. C. Beard, J. M. Luther, M. Law,§ R. J. Applications: Quantum Dot Solar Cells 6884 6.1. Quantum Dot Solar Cell Configurations 6885 6.1.1. Photoelectrodes Composed of Quantum Dot Arrays 6885 6.1.2. Quantum Dot-Sensitized Nanocrystalline TiO2 Solar Cells

George, Steven C.

16

Photodetectors based on colloidal quantum dots  

E-Print Network [OSTI]

Inspired by recent work demonstrating photocurrent enhancement in quantum-dot (QD) solids via post-deposition chemical annealing and by recent successes incorporating single monolayers of QDs in light-emitting devices ...

Oertel, David C. (David Charles)

2007-01-01T23:59:59.000Z

17

Synthesis and characterization of infrared quantum dots  

E-Print Network [OSTI]

This thesis focuses on the development of synthetic methods to create application ready quantum dots (QDs) in the infrared for biological imaging and optoelectronic devices. I concentrated primarily on controlling the size ...

Harris, Daniel Kelly

2014-01-01T23:59:59.000Z

18

An environmental impact assessment of quantum dot photovoltaics (QDPV) from raw material acquisition through use  

E-Print Network [OSTI]

An environmental impact assessment of quantum dot photovoltaics (QDPV) from raw material: Life cycle assessment Quantum dots Nanophotovoltaics Quantum dot photovoltaic modules Solar energy Assessment (LCA) of a proposed type of nanophotovoltaic, quantum dot photovoltaic (QDPV) module. The LCA

Illinois at Chicago, University of

19

Formation of long-range ordered quantum dots arrays in amorphous matrix by ion beam irradiation  

SciTech Connect (OSTI)

We demonstrate the production of a well ordered three-dimensional array of Ge quantum dots in amorphous silica matrix. The ordering is achieved by ion beam irradiation and annealing of a multilayer film. Structural analysis shows that quantum dots nucleate along the direction of the ion beam used for irradiation, while the mutual distance of the quantum dots is determined by the diffusion properties of the multilayer material rather than the distances between traces of ions that are used for irradiation.

Buljan, M. [Charles University in Prague, Prague 12116 (Czech Republic); Ruder Boskovic Institute, Zagreb 10000 (Croatia); Bogdanovic-Radovic, I.; Karlusic, M.; Desnica, U. V.; Radic, N.; Dubcek, P. [Ruder Boskovic Institute, Zagreb 10000 (Croatia); Drazic, G. [Jozef Stefan Institute, Ljubljana 1000 (Slovenia); Salamon, K. [Institute of Physics, Zagreb 10000 (Croatia); Bernstorff, S. [Sincrotrone Trieste, Basovizza 34012 (Italy); Holy, V. [Charles University in Prague, Prague 12116 (Czech Republic)

2009-08-10T23:59:59.000Z

20

Engineered Quantum Dot Single Photon Sources  

E-Print Network [OSTI]

Fast, high efficiency, and low error single photon sources are required for implementation of a number of quantum information processing applications. The fastest triggered single photon sources to date have been demonstrated using epitaxially grown semiconductor quantum dots (QDs), which can be conveniently integrated with optical microcavities. Recent advances in QD technology, including demonstrations of high temperature and telecommunications wavelength single photon emission, have made QD single photon sources more practical. Here we discuss the applications of single photon sources and their various requirements, before reviewing the progress made on a quantum dot platform in meeting these requirements.

Sonia Buckley; Kelley Rivoire; Jelena Vuckovic

2012-10-03T23:59:59.000Z

Note: This page contains sample records for the topic "determination quantum dot" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Nanostructured architectures for colloidal quantum dot solar cells  

E-Print Network [OSTI]

This thesis introduces a novel ordered bulk heterojunction architecture for colloidal quantum dot (QD) solar cells. Quantum dots are solution-processed nanocrystals whose tunable bandgap energies make them a promising ...

Jean, Joel, S.M. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

22

Fast quantum dot single photon source triggered at telecommunications wavelength  

E-Print Network [OSTI]

We demonstrate a quantum dot single photon source at 900 nm triggered at 300 MHz by a continuous wave telecommunications wavelength laser followed by an electro-optic modulator. The quantum dot is excited by on-chip-generated second harmonic radiation, resonantly enhanced by a GaAs photonic crystal cavity surrounding the InAs quantum dot. Our result suggests a path toward the realization of telecommunications-wavelength-compatible quantum dot single photon sources with speeds exceeding 1 GHz.

Kelley Rivoire; Sonia Buckley; Arka Majumdar; Hyochul Kim; Pierre Petroff; Jelena Vuckovic

2010-12-20T23:59:59.000Z

23

Scalable quantum computer architecture with coupled donor-quantum dot qubits  

DOE Patents [OSTI]

A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.

Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey

2014-08-26T23:59:59.000Z

24

Bilayer graphene quantum dot defined by topgates  

SciTech Connect (OSTI)

We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK, the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hopping and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature range. We use this method to define a quantum dot structure in bilayer graphene showing Coulomb blockade oscillations consistent with the gate layout.

Müller, André; Kaestner, Bernd; Hohls, Frank; Weimann, Thomas; Pierz, Klaus; Schumacher, Hans W., E-mail: hans.w.schumacher@ptb.de [Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany)

2014-06-21T23:59:59.000Z

25

Synthesis of CdSe quantum dots for quantum dot sensitized solar cell  

SciTech Connect (OSTI)

CdSe Quantum Dots (QDs) of size 0.85 nm were synthesized using chemical route. ZnO based Quantum Dot Sensitized Solar Cell (QDSSC) was fabricated using CdSe QDs as sensitizer. The Pre-synthesized QDs were found to be successfully adsorbed on front ZnO electrode and had potential to replace organic dyes in Dye Sensitized Solar Cells (DSSCs). The efficiency of QDSSC was obtained to be 2.06 % at AM 1.5.

Singh, Neetu, E-mail: singh.neetu1985@gmail.com; Kapoor, Avinashi [Department of Electronic Science, University of Delhi South Campus, New Delhi-110 021 (India); Kumar, Vinod [Department of Physics, University of the Free State, Bloemfontein, ZA9300 (South Africa); Mehra, R. M. [School of Engineering and Technology, Sharda University, Greater Noida-201 306, U.P. (India)

2014-04-24T23:59:59.000Z

26

E-Print Network 3.0 - atom quantum dot Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

third-generation solar cell efficiencies. Tiny quantum dots... the first all-quantum-dot photovoltaic cell, which was based on lead sulfide and demonstrated reasonable... quantum...

27

Local Quantum Dot Tuning on Photonic Crystal Chips  

E-Print Network [OSTI]

Quantum networks based on InGaAs quantum dots embedded in photonic crystal devices rely on QDs being in resonance with each other and with the cavities they are embedded in. We developed a new technique based on temperature tuning to spectrally align different quantum dots located on the same chip. The technique allows for up to 1.8nm reversible on-chip quantum dot tuning.

Andrei Faraon; Dirk Englund; Ilya Fushman; Nick Stoltz; Pierre Petroff; Jelena Vuckovic

2007-03-28T23:59:59.000Z

28

Electric Field effects on quantum correlations in semiconductor quantum dots  

E-Print Network [OSTI]

We study the effect of external electric bias on the quantum correlations in the array of optically excited coupled semiconductor quantum dots. The correlations are characterized by the quantum discord and concurrence and are observed using excitonic qubits. We employ the lower bound of concurrence for thermal density matrix at different temperatures. The effect of the F\\"orster interaction on correlations will be studied. Our theoretical model detects nonvanishing quantum discord when the electric field is on while concurrence dies, ensuring the existence of nonclassical correlations as measured by the quantum discord.

S. Shojaei; M. Mahdian; R. Yousefjani

2012-05-01T23:59:59.000Z

29

Separability and dynamical symmetry of Quantum Dots  

SciTech Connect (OSTI)

The separability and Runge–Lenz-type dynamical symmetry of the internal dynamics of certain two-electron Quantum Dots, found by Simonovi? et al. (2003), are traced back to that of the perturbed Kepler problem. A large class of axially symmetric perturbing potentials which allow for separation in parabolic coordinates can easily be found. Apart from the 2:1 anisotropic harmonic trapping potential considered in Simonovi? and Nazmitdinov (2013), they include a constant electric field parallel to the magnetic field (Stark effect), the ring-shaped Hartmann potential, etc. The harmonic case is studied in detail. -- Highlights: • The separability of Quantum Dots is derived from that of the perturbed Kepler problem. • Harmonic perturbation with 2:1 anisotropy is separable in parabolic coordinates. • The system has a conserved Runge–Lenz type quantity.

Zhang, P.-M., E-mail: zhpm@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou (China); Zou, L.-P., E-mail: zoulp@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou (China); Horvathy, P.A., E-mail: horvathy@lmpt.univ-tours.fr [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou (China); Laboratoire de Mathématiques et de Physique Théorique, Tours University (France); Gibbons, G.W., E-mail: G.W.Gibbons@damtp.cam.ac.uk [Department of Applied Mathematics and Theoretical Physics, Cambridge University, Cambridge (United Kingdom)

2014-02-15T23:59:59.000Z

30

Deposition of colloidal quantum dots by microcontact printing for LED display technology  

E-Print Network [OSTI]

This thesis demonstrates a new deposition method of colloidal quantum dots within a quantum dot organic light-emitting diode (QD-LED). A monolayer of quantum dots is microcontact printed as small as 20 ,Lm lines as well ...

Kim, LeeAnn

2006-01-01T23:59:59.000Z

31

Solution-Processed Solar Cells using Colloidal Quantum Dots ...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

physical understanding, and performance-oriented engineering of colloidal quantum dot solar cells and light sensors. Bio: Ted Sargent received the B.Sc.Eng. (Engineering...

32

Microfluidic self-assembly of quantum dot compound micelles.  

E-Print Network [OSTI]

??This thesis is devoted to the development of microfluidic processes for the controlled self-assembly of quantum dot compound micelles (QDCMs). Microfluidic processes are developed to… (more)

Schabas, Greg

2007-01-01T23:59:59.000Z

33

Quantum Dot Tracers for Use in Engineered Geothermal  

Broader source: Energy.gov (indexed) [DOE]

tracers, colloidal quantum dots, that offer great promise for use in characterizing fracture networks in EGS reservoirs. Since the wavelength of fluorescence (color) of these...

34

Quantum Dot Tracers for Use in Engineered Geothermal Systems...  

Broader source: Energy.gov (indexed) [DOE]

nanoparticles(quantum dots)that offer great promise for use in characterizing fracture networks in EGS reservoirs. tracersrosequantumdot.pdf More Documents &...

35

assembled quantum dots: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Quantum Dot Arrays and Applications of Multiple Exciton Generation to Third-Generation Photovoltaic Solar Cells Biology and Medicine Websites Summary: to Third-Generation...

36

asymmetry quantum dots: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Quantum Dot Arrays and Applications of Multiple Exciton Generation to Third-Generation Photovoltaic Solar Cells Biology and Medicine Websites Summary: to Third-Generation...

37

Temperature-Dependent Electron Transport in Quantum Dot Photovoltaics.  

E-Print Network [OSTI]

??Quantum dot photovoltaics have attracted much interest from researchers in recent years. They have the potential to address both costs and efficiencies of solar cells… (more)

Padilla, Derek

2013-01-01T23:59:59.000Z

38

Real-time effective-action approach to the Anderson quantum dot  

E-Print Network [OSTI]

The non-equilibrium time evolution of an Anderson quantum dot is investigated. The quantum dot is coupled between two leads forming a chemical-potential gradient. We use Kadanoff-Baym dynamic equations within a non-perturbative resummation of the s-channel bubble chains. The effect of the resummation leads to the introduction of a frequency-dependent 4-point vertex. The tunneling to the leads is taken into account exactly. The method allows the determination of the transient as well as stationary transport through the quantum dot, and results are compared with different schemes discussed in the literature (fRG, ISPI, tDMRG and QMC).

Sexty, Denes; Pawlowski, Jan

2010-01-01T23:59:59.000Z

39

Real-time effective-action approach to the Anderson quantum dot  

E-Print Network [OSTI]

The non-equilibrium time evolution of an Anderson quantum dot is investigated. The quantum dot is coupled between two leads forming a chemical-potential gradient. We use Kadanoff-Baym dynamic equations within a non-perturbative resummation of the s-channel bubble chains. The effect of the resummation leads to the introduction of a frequency-dependent 4-point vertex. The tunneling to the leads is taken into account exactly. The method allows the determination of the transient as well as stationary transport through the quantum dot, and results are compared with different schemes discussed in the literature (fRG, ISPI, tDMRG and QMC).

Denes Sexty; Thomas Gasenzer; Jan Pawlowski

2010-12-20T23:59:59.000Z

40

Comment on "Analysis of quantum coherent semiconductor quantum dot p-i-n junction photovoltaic cells"  

E-Print Network [OSTI]

This is a comment on PRL paper by A.P. Kirk "Analysis of quantum coherent semiconductor quantum dot p-i-n junction photovoltaic cells"

Scully, Marlan O

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "determination quantum dot" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Controlling quantum dot energies using submonolayer bandstructure engineering  

SciTech Connect (OSTI)

We demonstrate control of energy states in epitaxially-grown quantum dot structures formed by stacked submonolayer InAs depositions via engineering of the internal bandstructure of the dots. Transmission electron microscopy of the stacked sub-monolayer regions shows compositional inhomogeneity, indicative of the presence of quantum dots. The quantum dot ground state is manipulated not only by the number of deposited InAs layers, but also by control of the thickness and material composition of the spacing layers between submonolayer InAs depositions. In this manner, we demonstrate the ability to shift the quantum dot ground state energy at 77?K from 1.38?eV to 1.88?eV. The results presented offer a potential avenue towards enhanced control of dot energies for a variety of optoelectronic applications.

Yu, L.; Law, S.; Wasserman, D. [Department of Electrical and Computer Engineering, University of Illinois Urbana Champaign, Urbana, Illinois 61801 (United States); Jung, D.; Lee, M. L. [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Shen, J.; Cha, J. J. [Department of Mechanical Engineering and Materials Science and Energy Science Institute, Yale University, New Haven, Connecticut 06520 (United States)

2014-08-25T23:59:59.000Z

42

Quantum optics and cavity QED with quantum dots in photonic crystals  

E-Print Network [OSTI]

This chapter will primarily focus on the studies of quantum optics with semiconductor, epitaxially grown quantum dots embedded in photonic crystal cavities. We will start by giving brief introductions into photonic crystals and quantum dots, then proceed with the introduction to cavity quantum electrodynamics (QED) effects, with a particular emphasis on the demonstration of these effects on the quantum dot-photonic crystal platform. Finally, we will focus on the applications of such cavity QED effects.

Jelena Vuckovic

2014-02-11T23:59:59.000Z

43

Temperature Dependence of Single CdSe/ZnS Quantum Dots Luminescence Lifetime  

E-Print Network [OSTI]

, such as quantum dots (QDs), has grown dramatically. These semiconductor QDs bridge the gap between single

Paris-Sud XI, Université de

44

Photovoltaic quantum dot quantum cascade infrared photodetector A. V. Barve and S. Krishna  

E-Print Network [OSTI]

Photovoltaic quantum dot quantum cascade infrared photodetector A. V. Barve and S. Krishna Citation subject to AIP license or copyright; see http://apl.aip.org/about/rights_and_permissions #12;Photovoltaic) Design and characterization of a quantum dot quantum cascade detector for photovoltaic midwave infrared

Krishna, Sanjay

45

Linewidth broadening of a quantum dot coupled to an off-resonant cavity  

E-Print Network [OSTI]

We study the coupling between a photonic crystal cavity and an off-resonant quantum dot under resonant excitation of the cavity or the quantum dot. Linewidths of the quantum dot and the cavity as a function of the excitation laser power are measured. We show that the linewidth of the quantum dot, measured by observing the cavity emission, is significantly broadened compared to the theoretical estimate. This indicates additional incoherent coupling between the quantum dot and the cavity.

Arka Majumdar; Andrei Faraon; Erik Kim; Dirk Englund; Hyochul Kim; Pierre Petroff; Jelena Vuckovic

2010-03-11T23:59:59.000Z

46

Hybrid organic/quantum dot thin film structures and devices  

E-Print Network [OSTI]

Organic light emitting diodes have undergone rapid advancement over the course of the past decade. Similarly, quantum dot synthesis has progressed to the point that room temperature highly efficient photoluminescence can ...

Coe-Sullivan, Seth (Seth Alexander)

2005-01-01T23:59:59.000Z

47

Self-Sustaining Dynamical Nuclear Polarization Oscillations in Quantum Dots  

E-Print Network [OSTI]

Early experiments on spin-blockaded double quantum dots revealed robust, large-amplitude current oscillations in the presence of a static (dc) source-drain bias. Despite experimental evidence implicating dynamical nuclear ...

Rudner, M. S.

48

Optoelectronic and photonic control of single quantum dots  

E-Print Network [OSTI]

Optoelectronic and photonic control of single quantum dots Samuel James Dewhurst Wolfson College University of Cambridge A thesis submitted for the degree of Doctor of Philosophy April 2010 Declaration This thesis describes work carried out...

Dewhurst, Samuel James

2010-10-12T23:59:59.000Z

49

Fluorescence from a quantum dot and metallic nanosphere hybrid system  

SciTech Connect (OSTI)

We present energy absorption and interference in a quantum dot-metallic nanosphere system embedded on a dielectric substrate. A control field is applied to induce dipole moments in the nanosphere and the quantum dot, and a probe field is applied to monitor absorption. Dipole moments in the quantum dot or the metal nanosphere are induced, both by the external fields and by each other's dipole fields. Thus, in addition to direct polarization, the metal nanosphere and the quantum dot will sense one another via the dipole-dipole interaction. The density matrix method was used to show that the absorption spectrum can be split from one peak to two peaks by the control field, and this can also be done by placing the metal sphere close to the quantum dot. When the two are extremely close together, a self-interaction in the quantum dot produces an asymmetry in the absorption peaks. In addition, the fluorescence efficiency can be quenched by the addition of a metal nanosphere. This hybrid system could be used to create ultra-fast switching and sensing nanodevices.

Schindel, Daniel G. [Department of Mathematics and Statistics, University of Winnipeg, 515 Portage Avenue, Winnipeg, MB, R3B 2E9 (Canada); Singh, Mahi R. [Department of Physics and Astronomy, University of Western Ontario, 1151 Richmond Street, London, ON, N6A 3K7 (Canada)

2014-03-31T23:59:59.000Z

50

Double superexchange in quantum dot mesomaterials  

E-Print Network [OSTI]

of defects,2 and resist oxidation better.3 In addition, these small dots use their slice of the solar. An idea that has been explored for larger dots is to encapsulate them within an inorganic amorphous matrix yet to be achieved. A second approach is to encapsulate the dots within an organic polymer blend.12

Wu, Zhigang

51

Determination of lateral size distribution of type-II ZnTe/ZnSe stacked submonolayer quantum dots via spectral analysis of optical signature of the Aharanov-Bohm excitons  

SciTech Connect (OSTI)

For submonolayer quantum dot (QD) based photonic devices, size and density of QDs are critical parameters, the probing of which requires indirect methods. We report the determination of lateral size distribution of type-II ZnTe/ZnSe stacked submonolayer QDs, based on spectral analysis of the optical signature of Aharanov-Bohm (AB) excitons, complemented by photoluminescence studies, secondary-ion mass spectroscopy, and numerical calculations. Numerical calculations are employed to determine the AB transition magnetic field as a function of the type-II QD radius. The study of four samples grown with different tellurium fluxes shows that the lateral size of QDs increases by just 50%, even though tellurium concentration increases 25-fold. Detailed spectral analysis of the emission of the AB exciton shows that the QD radii take on only certain values due to vertical correlation and the stacked nature of the QDs.

Ji, Haojie; Dhomkar, Siddharth; Roy, Bidisha; Kuskovsky, Igor L. [Department of Physics, Queens College of CUNY, Queens, New York 11367 (United States); The Graduate Center of CUNY, New York, New York 10016 (United States); Shuvayev, Vladimir [Department of Physics, Queens College of CUNY, Queens, New York 11367 (United States); Deligiannakis, Vasilios; Tamargo, Maria C. [The Graduate Center of CUNY, New York, New York 10016 (United States); Department of Chemistry, City College of CUNY, New York, New York 10031 (United States); Ludwig, Jonathan [National High Magnetic Field Laboratory, Tallahassee, Florida 32310 (United States); Department of Physics, Florida State University, Tallahassee, Florida 32306 (United States); Smirnov, Dmitry [National High Magnetic Field Laboratory, Tallahassee, Florida 32310 (United States); Wang, Alice [Evans Analytical Group, Sunnyvale, California 94086 (United States)

2014-10-28T23:59:59.000Z

52

THE FABRICATION AND ANALYSIS OF QUANTUM-DOT THIN FILM LIGHT EMITTING DIODES FOR USE IN DISPLAYS TECHNOLOGIES.  

E-Print Network [OSTI]

??The quantum dot has many applications, one of which is the light emitting diode. Quantum dot light emitting diodes were fabricated for their use in… (more)

Pickering, Shawn

2011-01-01T23:59:59.000Z

53

Fabrication and optimization of light emitting devices with core-shell quantum dots  

E-Print Network [OSTI]

Quantum dot light emitting devices (QD-LEDs) are promising options for the next generation of solid state lighting, color displays, and other optoelectronic applications. Overcoating quantum dots (QDs) -- semiconducting ...

Song, Katherine Wei

2013-01-01T23:59:59.000Z

54

Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix  

DOE Patents [OSTI]

A plurality of quantum dots each have a shell. The quantum dots are embedded in an organic matrix. At least the quantum dots and the organic matrix are photoconductive semiconductors. The shell of each quantum dot is arranged as a tunneling barrier to require a charge carrier (an electron or a hole) at a base of the tunneling barrier in the organic matrix to perform quantum mechanical tunneling to reach the respective quantum dot. A first quantum state in each quantum dot is between a lowest unoccupied molecular orbital (LUMO) and a highest occupied molecular orbital (HOMO) of the organic matrix. Wave functions of the first quantum state of the plurality of quantum dots may overlap to form an intermediate band.

Forrest, Stephen R. (Ann Arbor, MI)

2008-08-19T23:59:59.000Z

55

Coherent excitation of a strongly coupled quantum dot - cavity system  

E-Print Network [OSTI]

We have studied the coherent excitation of a strongly coupled QD/photonic crystal cavity system. Time-resolved reflectivity measurements show the vacuum Rabi oscillation of the dot in the cavity. Next, we considered the resonant driving of a cavity-detuned dot, which efficiently populates the cavity mode. This cavity-controlled read-out channel allows high-resolution single quantum dot spectroscopy. Autocorrelation measurements on the cavity mode show antibunching and suggest the use of the resonantly driven QD/cavity system as an on-demand source of single photons with potentially near-unity indistinguishability.

Dirk Englund; Arka Majumdar; Andrei Faraon; Mitsuru Toishi; Nick Stoltz; Pierre Petroff; Jelena Vuckovic

2009-02-19T23:59:59.000Z

56

Quantum interference in exciton-Mn spin interactions in a CdTe semiconductor quantum dot  

E-Print Network [OSTI]

We show theoretically and experimentally the existence of a new quantum interference(QI) effect between the electron-hole interactions and the scattering by a single Mn impurity. Theoretical model, including electron-valence hole correlations, the short and long range exchange interaction of Mn ion with the heavy hole and with electron and anisotropy of the quantum dot, is compared with photoluminescence spectroscopy of CdTe dots with single magnetic ions. We show how design of the electronic levels of a quantum dot enable the design of an exciton, control of the quantum interference and hence engineering of light-Mn interaction.

Trojnar, A; Kadantsev, E; Hawrylak, P; Goryca, M; Kazimierczuk, T; Kossacki, P; Wojnar, P; Potemski, M

2011-01-01T23:59:59.000Z

57

Quantum interference in exciton-Mn spin interactions in a CdTe semiconductor quantum dot  

E-Print Network [OSTI]

We show theoretically and experimentally the existence of a new quantum interference(QI) effect between the electron-hole interactions and the scattering by a single Mn impurity. Theoretical model, including electron-valence hole correlations, the short and long range exchange interaction of Mn ion with the heavy hole and with electron and anisotropy of the quantum dot, is compared with photoluminescence spectroscopy of CdTe dots with single magnetic ions. We show how design of the electronic levels of a quantum dot enable the design of an exciton, control of the quantum interference and hence engineering of light-Mn interaction.

A. Trojnar; M. Korkusinski; E. Kadantsev; P. Hawrylak; M. Goryca; T. Kazimierczuk; P. Kossacki; P. Wojnar; M. Potemski

2011-05-04T23:59:59.000Z

58

Midwave infrared quantum dot avalanche photodiode David A. Ramirez,a  

E-Print Network [OSTI]

Midwave infrared quantum dot avalanche photodiode David A. Ramirez,a Jiayi Shao, Majeed M. Hayat demonstration of a GaAs based avalanche photodiode APD operating in the midwave infrared region 3­5 m . In the device, called the quantum dot avalanche photodiode, an intersubband quantum dots-in-a-well detector

Hayat, Majeed M.

59

Self-organized formation of quantum dots of a material on a substrate  

DOE Patents [OSTI]

Systems and methods are described for fabricating arrays of quantum dots. A method for making a quantum dot device, includes: forming clusters of atoms on a substrate; and charging the clusters of atoms such that the clusters of atoms repel one another. The systems and methods provide advantages because the quantum dots can be ordered with regard to spacing and/or size.

Zhang, Zhenyu (232 Long Bow Rd., Knoxville, TN 37922); Wendelken, John F. (925 Suwanee Rd., Knoxville, TN 37923); Chang, Ming-Che (F4-2, No. 178 Sec 5 Minsheng East Rd., Taipei, TW); Pai, Woei Wu (1F, No. 17, Alley 11, Lane 202, Ming Chyuan Rd., Pan Chou City, Taipei County, TW)

2001-01-01T23:59:59.000Z

60

Tunable few-electron double quantum dots and Klein tunnelling in ultraclean carbon nanotubes  

E-Print Network [OSTI]

Tunable few-electron double quantum dots and Klein tunnelling in ultraclean carbon nanotubes G. A. Steele*, G. Gotz and L. P. Kouwenhoven Quantum dots defined in carbon nanotubes are a platform for both with highly tunable barriers1 , but disorder has prevented tunable nanotube- based quantum-dot devices from

Note: This page contains sample records for the topic "determination quantum dot" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Temperature-Tuning of Near-Infrared Monodisperse Quantum Dot Solids at  

E-Print Network [OSTI]

include solar energy conversion as well as quantum communication. In quantum dot systems, the dot sizes photovoltaics, capturing the infrared spectrum, and also exhibiting possible multi- exciton generation.4. Incoherent Fo¨rster resonance energy transfer (FRET) 8­11 can occur between different-sized quantum dots

Hone, James

62

Photovoltaic performance of ultra-small PbSe quantum dots  

E-Print Network [OSTI]

Y; Alivisatos, AP, Photovoltaic Devices Employing TernaryPhotovoltaic performance of ultra-small PbSe quantum dotsquantum dot, solar cell, photovoltaic, quantum size effect

Ma, Wanli

2014-01-01T23:59:59.000Z

63

High-brightness single photon source from a quantum dot in a directional-emission nanocavity  

E-Print Network [OSTI]

We analyze a single photon source consisting of an InAs quantum dot coupled to a directional-emission photonic crystal (PC) cavity implemented in GaAs. On resonance, the dot's lifetime is reduced by more than 10 times, to 45ps. Compared to the standard three-hole defect cavity, the perturbed PC cavity design improves the collection efficiency into an objective lens (NA=0.75) by factor 6, and improves the coupling efficiency of the collected light into a single mode fiber by factor 1.9. The emission frequency is determined by the cavity mode, which is antibunched to g(2)=0.05. The cavity design also enables efficient coupling to a higher-order cavity mode for local optical excitation of cavity-coupled quantum dots.

Mitsuru Toishi; Dirk Englund; Andrei Faraon; Jelena Vuckovic

2009-04-08T23:59:59.000Z

64

Theoretical performance of solar cell based on mini-bands quantum dots  

SciTech Connect (OSTI)

The tremendous amount of research in solar energy is directed toward intermediate band solar cell for its advantages compared with the conventional solar cell. The latter has lower efficiency because the photons have lower energy than the bandgap energy and cannot excite mobile carriers from the valence band to the conduction band. On the other hand, if mini intermediate band is introduced between the valence and conduction bands, then the smaller energy photons can be used to promote charge carriers transfer to the conduction band and thereby the total current increases while maintaining a large open circuit voltage. In this article, the influence of the new band on the power conversion efficiency for structure of quantum dots intermediate band solar cell is theoretically investigated and studied. The time-independent Schrödinger equation is used to determine the optimum width and location of the intermediate band. Accordingly, achievement of a maximum efficiency by changing the width of quantum dots and barrier distances is studied. Theoretical determination of the power conversion efficiency under the two different ranges of QD width is presented. From the obtained results, the maximum power conversion efficiency is about 70.42%. It is carried out for simple cubic quantum dot crystal under fully concentrated light. It is strongly dependent on the width of quantum dots and barrier distances.

Aly, Abou El-Maaty M., E-mail: drabouelmaaty@hotmail.com, E-mail: ashraf.nasr@gmail.com [Power Electronics and Energy Conversion Department, ERI, NRCB (Egypt); College of Computer, Qassim University, P.O.B. 6688, Buryadah 51453 (Saudi Arabia); Nasr, A., E-mail: drabouelmaaty@hotmail.com, E-mail: ashraf.nasr@gmail.com [Radiation Engineering Department, NCRRT, Atomic Energy Authority (Egypt); College of Computer, Qassim University, P.O.B. 6688, Buryadah 51453 (Saudi Arabia)

2014-03-21T23:59:59.000Z

65

Circuit QED in a double quantum dot system  

SciTech Connect (OSTI)

Strong coupling peculiar feature is demonstrated in a coupled qubit-resonator system consisting of a GaAs double quantum dot and a coplanar waveguide resonator. Qubit-resonator coupling strength (g and the decoherence rate ? are directly derived from the experiment, assuring a strong coupling condition (g/? ? 2)

Toida, Hiraku; Nakajima, Takashi; Komiyama, Susumu [Department of Basic Science, University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902 (Japan)

2013-12-04T23:59:59.000Z

66

Electronic structure of quantum dots Stephanie M. Reimann  

E-Print Network [OSTI]

Electronic structure of quantum dots Stephanie M. Reimann Mathematical Physics, Lund Institute are reviewed. Experimental techniques for measuring the electronic shell structure and the effect of magnetic fields are briefly described. The electronic structure is analyzed in terms of simple single

Wu, Zhigang

67

Quantum dot-based nanomaterials for biological imaging  

E-Print Network [OSTI]

Quantum dot-based fluorescent probes were synthesized and applied to biological imaging in two distinct size regimes: (1) 100-1000 nm and (2) < 10 nm in diameter. The larger diameter range was accessed by doping CdSe/ZnS ...

Zimmer, John P. (John Philip)

2006-01-01T23:59:59.000Z

68

Double-Dot Quantum Ratchet Driven by an Independently Biased Quantum Point Contact V. S. Khrapai,1,2  

E-Print Network [OSTI]

Double-Dot Quantum Ratchet Driven by an Independently Biased Quantum Point Contact V. S. Khrapai,1 of the two quantum dots. The results are interpreted in terms of a quantum ratchet phenomenon in a DQD possessing current be- cause of broken spatial symmetry, so-called ratchets, ap- pear in a variety

Ludwig-Maximilians-Universität, München

69

Ordered quantum dot molecules and single quantum dots formed by self-organized anisotropic strain engineering  

SciTech Connect (OSTI)

An ordered lattice of lateral InAs quantum dot (QD) molecules is created by self-organized anisotropic strain engineering of an (In,Ga)As/GaAs superlattice (SL) template on GaAs(311)B by molecular-beam epitaxy, constituting a Turing pattern in solid state. The SL template and InAs QD growth conditions, such as the number of SL periods, growth temperatures, amount and composition of deposited (In,Ga)As, and insertion of Al-containing layers, are studied in detail for an optimized QD ordering within and among the InAs QD molecules on the SL template nodes, which is evaluated by atomic force microscopy. The average number of InAs QDs within the molecules is controlled by the thickness of the upper GaAs separation layer on the SL template and the (In,Ga)As growth temperature in the SL. The strain-correlated growth in SL template formation and QD ordering is directly confirmed by high-resolution x-ray diffraction. Ordered arrays of single InAs QDs on the SL template nodes are realized for elevated SL template and InAs QD growth temperatures together with the insertion of a second InAs QD layer. The InAs QD molecules exhibit strong photoluminescence (PL) emission up to room temperature. Temperature-dependent PL measurements exhibit an unusual behavior of the full width at half maximum, indicating carrier redistribution solely within the QD molecules.

Lippen, T. van; Noetzel, R.; Hamhuis, G.J.; Wolter, J.H. [European Institute of Telecommunication Technologies/Communication Technology, Basic Research and Applications (eiTT/COBRA) Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)

2005-02-15T23:59:59.000Z

70

Full counting statistics as a probe of quantum coherence in a side-coupled double quantum dot system  

SciTech Connect (OSTI)

We study theoretically the full counting statistics of electron transport through side-coupled double quantum dot (QD) based on an efficient particle-number-resolved master equation. It is demonstrated that the high-order cumulants of transport current are more sensitive to the quantum coherence than the average current, which can be used to probe the quantum coherence of the considered double QD system. Especially, quantum coherence plays a crucial role in determining whether the super-Poissonian noise occurs in the weak inter-dot hopping coupling regime depending on the corresponding QD-lead coupling, and the corresponding values of super-Poissonian noise can be relatively enhanced when considering the spins of conduction electrons. Moreover, this super-Poissonian noise bias range depends on the singly-occupied eigenstates of the system, which thus suggests a tunable super-Poissonian noise device. The occurrence-mechanism of super-Poissonian noise can be understood in terms of the interplay of quantum coherence and effective competition between fast-and-slow transport channels. -- Highlights: •The FCS can be used to probe the quantum coherence of side-coupled double QD system. •Probing quantum coherence using FCS may permit experimental tests in the near future. •The current noise characteristics depend on the quantum coherence of this QD system. •The super-Poissonian noise can be enhanced when considering conduction electron spin. •The side-coupled double QD system suggests a tunable super-Poissonian noise device.

Xue, Hai-Bin, E-mail: xuehaibin@tyut.edu.cn

2013-12-15T23:59:59.000Z

71

Optical Nonlinearities and Ultrafast Carrier Dynamics in Semiconductor Quantum Dots  

SciTech Connect (OSTI)

Low-dimensional semiconductors have attracted great interest due to the potential for tailoring their linear and nonlinear optical properties over a wide-range. Semiconductor nanocrystals (NC's) represent a class of quasi-zero-dimensional objects or quantum dots. Due to quantum cordhement and a large surface-to-volume ratio, the linear and nonlinear optical properties, and the carrier dynamics in NC's are significantly different horn those in bulk materials. napping at surface states can lead to a fast depopulation of quantized states, accompanied by charge separation and generation of local fields which significantly modifies the nonlinear optical response in NC's. 3D carrier confinement also has a drastic effect on the energy relaxation dynamics. In strongly confined NC's, the energy-level spacing can greatly exceed typical phonon energies. This has been expected to significantly inhibit phonon-related mechanisms for energy losses, an effect referred to as a phonon bottleneck. It has been suggested recently that the phonon bottleneck in 3D-confined systems can be removed due to enhanced role of Auger-type interactions. In this paper we report femtosecond (fs) studies of ultrafast optical nonlinearities, and energy relaxation and trap ping dynamics in three types of quantum-dot systems: semiconductor NC/glass composites made by high temperature precipitation, ion-implanted NC's, and colloidal NC'S. Comparison of ultrafast data for different samples allows us to separate effects being intrinsic to quantum dots from those related to lattice imperfections and interface properties.

Klimov, V.; McBranch, D.; Schwarz, C.

1998-08-10T23:59:59.000Z

72

Simulation of quantum dots size and spacing effect for intermediate band solar cell application based on InAs quantum dots arrangement in GaAs  

SciTech Connect (OSTI)

Intermediate band solar cell (IBSC) has become a promising technology in increasing solar cell efficiency. In this work we compare absorption coefficient profile between InAs quantum dots with GaAs bulk. We calculate the efficiency of GaAs bulk and GaAs doped with 2, 5, and 10 nm InAs quantum dot. Effective distances in quantum dot arrangement based on electron tunneling consideration were also calculated. We presented a simple calculation method with low computing power demand. Results showed that arrangement of quantum dot InAs in GaAs can increase solar cell efficiency from 23.9 % initially up to 60.4%. The effective distance between two quantum dots was found 2 nm in order to give adequate distance to prevent electron tunneling and wave functions overlap.

Hendra, P. I. B., E-mail: ib.hendra@gmail.com; Rahayu, F., E-mail: ib.hendra@gmail.com; Darma, Y., E-mail: ib.hendra@gmail.com [Physical Vapor Deposition Laboratory, Physics of Material Electronics Research, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung 40132 (Indonesia)

2014-03-24T23:59:59.000Z

73

Resonant scattering of surface plasmon polaritons by dressed quantum dots  

SciTech Connect (OSTI)

The resonant scattering of surface plasmon-polariton waves (SPP) by embedded semiconductor quantum dots above the dielectric/metal interface is explored in the strong-coupling regime. In contrast to non-resonant scattering by a localized dielectric surface defect, a strong resonant peak in the spectrum of the scattered field is predicted that is accompanied by two side valleys. The peak height depends nonlinearly on the amplitude of SPP waves, reflecting the feedback dynamics from a photon-dressed electron-hole plasma inside the quantum dots. This unique behavior in the scattered field peak strength is correlated with the occurrence of a resonant dip in the absorption spectrum of SPP waves due to the interband photon-dressing effect. Our result on the scattering of SPP waves may be experimentally observable and applied to spatially selective illumination and imaging of individual molecules.

Huang, Danhong; Cardimona, Dave [Air Force Research Laboratory, Space Vehicles Directorate, Kirtland Air Force Base, New Mexico 87117 (United States); Easter, Michelle [Department of Mechanical Engineering, Stevens Institute of Technology, 1 Castle Point Terrace, Hoboken, New Jersey 07030 (United States); Gumbs, Godfrey [Department of Physics and Astronomy, Hunter College of the City University of New York, 695 Park Avenue, New York, New York 10065 (United States); Maradudin, A. A. [Department of Physics and Astronomy, University of California, Irvine, California 92697 (United States); Lin, Shawn-Yu [Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Zhang, Xiang [Department of Mechanical Engineering, 3112 Etcheverry Hall, University of California at Berkeley, Berkeley, California 94720 (United States)

2014-06-23T23:59:59.000Z

74

Observations of Rabi oscillations in a non-polar InGaN quantum dot  

SciTech Connect (OSTI)

Experimental observation of Rabi rotations between an exciton excited state and the crystal ground state in a single non-polar InGaN quantum dot is presented. The exciton excited state energy is determined by photoluminescence excitation spectroscopy using two-photon excitation from a pulsed laser. The population of the exciton excited state is seen to undergo power dependent damped Rabi oscillations.

Reid, Benjamin P. L., E-mail: benjamin.reid@physics.ox.ac.uk; Chan, Christopher C. S.; Taylor, Robert A. [Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom); Kocher, Claudius [Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom); Konstanz University, Konstanz (Germany); Zhu, Tongtong; Oehler, Fabrice; Emery, Robert; Oliver, Rachel A. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

2014-06-30T23:59:59.000Z

75

Second harmonic generation from direct band gap quantum dots pumped by femtosecond laser pulses  

SciTech Connect (OSTI)

We report on nonlinear optical experiments performed on Cu{sub 2}S quantum dots (QDs) pumped by femtosecond laser pulses. We conduct a theoretical simulation and experiments to determine their second harmonic generation characteristics. Furthermore, we demonstrate that the QDs have a second harmonic generation conversion efficiency of up to 76%. Our studies suggest that these Cu{sub 2}S QDs can be used for solar cells, bioimaging, biosensing, and electric detection.

Liu, Liwei, E-mail: liulw@cust.edu.cn; Wang, Yue; Hu, Siyi; Ren, Yu; Huang, Chen [School of Science, Changchun University of Science and Technology, Changchun, Jilin 130022, People's Republic of China and International Joint Research Center for Nanophotonics and Biophotonics, Changchun University of Science and Technology, Changchun, Jilin 130022 (China)

2014-02-21T23:59:59.000Z

76

Enhanced Two-Photon Processes in Quantum Dots inside Photonic Crystal Nanocavities and Quantum Information Processing Applications  

E-Print Network [OSTI]

We show that the two-photon transition rates of quantum dots coupled to nanocavities are enhanced by up to 8 orders of magnitude relative to quantum dots in bulk host. We then propose how to take advantage of this enhancement to implement coherent quantum dot excitation by two-photon absorption, entangled photon pair generation by two-photon spontaneous emission, and single-photon generation at telecommunication wavelengths by two-photon stimulated and spontaneous emission.

Ziliang Lin; Jelena Vuckovic

2009-07-02T23:59:59.000Z

77

Cavity Quantum Electrodynamics with a Single Quantum Dot Coupled to a Photonic Molecule  

E-Print Network [OSTI]

We demonstrate the effects of cavity quantum electrodynamics for a quantum dot coupled to a photonic molecule, consisting of a pair of coupled photonic crystal cavities. We show anti-crossing between the quantum dot and the two super-modes of the photonic molecule, signifying achievement of the strong coupling regime. From the anti-crossing data, we estimate the contributions of both mode-coupling and intrinsic detuning to the total detuning between the super-modes. Finally, we also show signatures of off-resonant cavity-cavity interaction in the photonic molecule.

Arka Majumdar; Armand Rundquist; Michal Bajcsy; Jelena Vu?kovi?

2012-01-30T23:59:59.000Z

78

Features of the electronic spectrum in a type-I core - shell quantum dot  

SciTech Connect (OSTI)

The model is proposed, which allows one to solve the problem of finding the energy spectrum and the wave function of an electron in a type-I core - shell quantum dot. It is shown that the size of the core and shell can serve as control parameters for the optimisation of the energy structure of the quantum dot in order to obtain the real structures with desired electrophysical and optical properties. (quantum dots)

Igoshina, S E; Karmanov, A A [Penza State University, Penza (Russian Federation)

2013-01-31T23:59:59.000Z

79

A Graphene Quantum Dot with a Single Electron Transistor as Integrated Charge Sensor  

E-Print Network [OSTI]

We have developed an etching process to fabricate a quantum dot and a nearby single electron transistor as a charge detector in a single layer graphene. The high charge sensitivity of the detector is used to probe Coulomb diamonds as well as excited spectrum in the dot, even in the regime where the current through the quantum dot is too small to be measured by conventional transport means. The graphene based quantum dot and integrated charge sensor serve as an essential building block to form a solid-state qubit in a nuclear-spin-free quantum world.

Ling-Jun Wang; Gang Cao; Tao Tu; Hai-Ou Li; Cheng Zhou; Xiao-Jie Hao; Zhan Su; Guang-Can Guo; Guo-Ping Guo; Hong-Wen Jiang

2010-08-28T23:59:59.000Z

80

artificial quantum-dot helium: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Quantum Dot Arrays and Applications of Multiple Exciton Generation to Third-Generation Photovoltaic Solar Cells Biology and Medicine Websites Summary: to Third-Generation...

Note: This page contains sample records for the topic "determination quantum dot" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

acid-capped cdse quantum-dot: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Quantum Dot Arrays and Applications of Multiple Exciton Generation to Third-Generation Photovoltaic Solar Cells Biology and Medicine Websites Summary: to Third-Generation...

82

Manipulating surface diffusion and elastic interactions to obtain quantum dot multilayer arrangements over different length scales  

SciTech Connect (OSTI)

An innovative multilayer growth of InAs quantum dots on GaAs(100) is demonstrated to lead to self-aggregation of correlated quantum dot chains over mesoscopic distances. The fundamental idea is that at critical growth conditions is possible to drive the dot nucleation only at precise locations corresponding to the local minima of the Indium chemical potential. Differently from the known dot multilayers, where nucleation of new dots on top of the buried ones is driven by the surface strain originating from the dots below, here the spatial correlations and nucleation of additional dots are mostly dictated by a self-engineering of the surface occurring during the growth, close to the critical conditions for dot formation under the fixed oblique direction of the incoming As flux, that drives the In surface diffusion.

Placidi, E., E-mail: ernesto.placidi@ism.cnr.it; Arciprete, F. [Istituto di Struttura della Materia, CNR, Via del Fosso del Cavaliere 100, 00133 Rome (Italy); Università di Roma “Tor Vergata”, Dipartimento di Fisica, via della Ricerca Scientifica 1, 00133 Rome (Italy); Latini, V.; Latini, S.; Patella, F. [Università di Roma “Tor Vergata”, Dipartimento di Fisica, via della Ricerca Scientifica 1, 00133 Rome (Italy); Magri, R. [Dipartimento di Scienze Fisiche, Informatiche e Matematiche (FIM), Università di Modena e Reggio Emilia, and Centro S3 CNR-Istituto Nanoscienze, Via Campi 213/A, 4100 Modena (Italy); Scuderi, M.; Nicotra, G. [CNR-IMM, Strada VIII, 5, 95121 Catania (Italy)

2014-09-15T23:59:59.000Z

83

Two-path transport measurements with bias dependence on a triple quantum dot  

SciTech Connect (OSTI)

We present transport measurements on a lateral triple quantum dot with a star-like geometry and one lead attached to each dot. The system is studied in a regime close to established quadruple points, where all three dots are in resonance. The specific sample structure allows us to apply two different bias voltages to the two source leads and thus to study the influence between the paths with serial double dots.

Kotzian, M.; Rogge, M. C.; Haug, R. J. [Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstr. 2, 30167 Hannover (Germany)

2013-12-04T23:59:59.000Z

84

Single photon absorption and dynamic control of a coupled quantum dot-cavity system  

E-Print Network [OSTI]

We theoretically investigate the dynamic interaction of a quantum dot in a nanocavity with timesymmetric single photon pulses. The simulations, based on a wavefunction approach, reveal that almost perfect single photon absorption occurs for quantum dot-cavity systems operating on the edge between strong and weak coupling regime. The computed maximum absorptions probability is close to unity for pulses with a typical length comparable to the half of the Rabi period. Furthermore, the dynamic control of the quantum dot energy via electric fields allows the freezing of the light-matter interaction leaving the quantum dot in its excited state. Shaping of single photon wavepackets by the electric field control is limited by the occurrence of chirping of the single photon pulse. This understanding of the interaction of single photon pulses with the quantum dot-cavity system provides the basis for the development of advanced protocols for quantum information processing in the solid state.

Robert Johne; Andrea Fiore

2011-10-11T23:59:59.000Z

85

Ligand Mediated Surface Reconstruction of Photoluminescent CdTe Quantum Dots.  

E-Print Network [OSTI]

??Enhancement of photoluminescence (PL) is observed for light-shielded dodecylamine-capped colloidal CdTe quantum dots (CdTe/DDA QDs) dispersed in toluene after washing and recapping. The PL quantum… (more)

Onnink, A.J.

2013-01-01T23:59:59.000Z

86

Compact biocompatible quantum dots via RAFT-mediated synthesis of imidazole-based random copolymer ligand  

E-Print Network [OSTI]

We present a new class of polymeric ligands for quantum dot (QD) water solubilization to yield biocompatible and derivatizable QDs with compact size (10?12 nm diameter), high quantum yields (>50%), excellent stability ...

Liu, Wenhao

87

Physica E 32 (2006) 1416 Tuning the cross-gap transition energy of a quantum dot  

E-Print Network [OSTI]

; Spectroscopy; Energy tuning Self-assembled semiconductor quantum dots (QDs) are of great interest for quantum resistance bridge circuit in combination with a lock in amplifier is used to measure the change in resistance

Ludwig-Maximilians-Universität, München

2006-01-01T23:59:59.000Z

88

Self-assembly of silicide quantum dot arrays on stepped silicon surfaces by reactive epitaxy  

E-Print Network [OSTI]

investigated on the epitaxy and self- organization of laterally nanostructured transition metal TM silicideSelf-assembly of silicide quantum dot arrays on stepped silicon surfaces by reactive epitaxy L to be a flexible and a convenient method for the preparation of dense arrays of Co silicide quantum dots

Ortega, Enrique

89

Review paper: Toward highly efficient quantum-dot-and dye-sensitized solar cells  

E-Print Network [OSTI]

Review paper: Toward highly efficient quantum-dot- and dye-sensitized solar cells Hongsik Choi Interface control Light harvesting Tandem solar cell a b s t r a c t Dye- and quantum-dot-sensitized solar technologies of silicon-based solar cells should be resolved [7]. Dye-sensitized solar cells (DSSCs) have been

Park, Byungwoo

90

Evidence for formation of multi-quantum dots in hydrogenated graphene  

E-Print Network [OSTI]

Abstract We report the experimental evidence for the formation of multi-quantum dots in a hydrogenated single-layer graphene flake. The existence of multi-quantum dots is supported by the low-temperature measurements on a field effect transistor...

Chuang, Chiashain; Puddy, Reuben K; Connolly, Malcolm R; Lo, Shun-Tsung; Lin, Huang-De; Chen, Tse-Ming; Smith, Charles G; Liang, Chi-Te

2012-08-16T23:59:59.000Z

91

Rapid degradation of CdSe/ZnS colloidal quantum dots exposed to gamma irradiation  

E-Print Network [OSTI]

- grade their optical properties. In this paper, we report on the effects of gamma irradiationRapid degradation of CdSe/ZnS colloidal quantum dots exposed to gamma irradiation Nathan J. Withers of 137 Cs gamma irradiation on photoluminescent properties of CdSe/ZnS colloidal quantum dots

New Mexico, University of

92

Light extraction analysis and enhancement in a quantum dot light emitting diode  

E-Print Network [OSTI]

Light extraction analysis and enhancement in a quantum dot light emitting diode Ruidong Zhu outcoupling and angular performance of quantum dot light emitting diode (QLED). To illustrate the design principles, we use a red QLED as an example and compare its performance with an organic light emitting diode

Wu, Shin-Tson

93

Mid Infrared Focal Plane Arrays With Nanoscale Quantum Dots and Superlattices  

E-Print Network [OSTI]

Mid Infrared Focal Plane Arrays With Nanoscale Quantum Dots and Superlattices S. Krishna Center- Molecular beam epitaxy, Nanoscale, Quantum Dots Superlattices, Antimonides, Mid-infrared photodetector. I. INTRODUCTION Presently, the state of the art photon detectors for the mid wave infrared (MWIR, 3-5 µm) and long

Krishna, Sanjay

94

Absorption and photoluminescence spectroscopy on a single self-assembled charge-tunable quantum dot  

E-Print Network [OSTI]

Absorption and photoluminescence spectroscopy on a single self-assembled charge-tunable quantum dot PL and absorption spectroscopy on the same single self- assembled quantum dot in a charge the corresponding transition in absorption. We have developed a model of the Coulomb blockade to account

Ludwig-Maximilians-Universität, München

95

Ambient-Processed Colloidal Quantum Dot Solar Cells via Individual Pre-Encapsulation of Nanoparticles  

E-Print Network [OSTI]

Ambient-Processed Colloidal Quantum Dot Solar Cells via Individual Pre-Encapsulation, 2010; E-mail: ted.sargent@utoronto.ca Solution-processed solar cells employing colloidal quantum dots-junction and tandem solar cells both rely on IR-band-gap semiconductors, there has been much recent emphasis

96

PHYSICAL REVIEW B 84, 205305 (2011) Spin-phonon coupling in single Mn-doped CdTe quantum dot  

E-Print Network [OSTI]

PHYSICAL REVIEW B 84, 205305 (2011) Spin-phonon coupling in single Mn-doped CdTe quantum dot C. L dynamics of a single Mn atom in a laser driven CdTe quantum dot is addressed theoretically. Recent of single Mn-doped CdTe dots, information about the quantum spin state of a single Mn atom is extracted from

Paris-Sud XI, Université de

97

Quantum Dots-based Reverse Phase Protein Microarray  

SciTech Connect (OSTI)

CdSe nanocrystals, also called quantum dots (Qdots) are a novel class of fluorophores, which have a diameter of a few nanometers and possess high quantum yield, tunable emission wavelength and photostability. They are an attractive alternative to conventional fluorescent dyes. Quantum dots can be silanized to be soluble in aqueous solution under biological conditions, and thus be used in bio-detection. In this study, we established a novel Qdot-based technology platform that can perform accurate and reproducible quantification of protein concentration in a crude cell lysate background. Protein lysates have been spiked with a target protein, and a dilution series of the cell lysate with a dynamic range of three orders of magnitude has been used for this proof-of-concept study. The dilution series has been spotted in microarray format, and protein detection has been achieved with a sensitivity that is at least comparable to standard commercial assays, which are based on horseradish peroxidase (HRP) catalyzed diaminobenzidine (DAB) chromogenesis. The data obtained through the Qdot method has shown a close linear correlation between relative fluorescence unit and relative protein concentration. The Qdot results are in almost complete agreement with data we obtained with the well-established HRP-DAB colorimetric array (R{sup 2} = 0.986). This suggests that Qdots can be used for protein quantification in microarray format, using the platform presented here.

Shingyoji, Masato; Gerion, Daniele; Pinkel, Dan; Gray, Joe W.; Chen, Fanqing

2005-07-15T23:59:59.000Z

98

Theory of dynamic nuclear polarization and feedback in quantum dots  

E-Print Network [OSTI]

An electron confined in a quantum dot interacts with its local nuclear spin environment through the hyperfine contact interaction. This interaction combined with external control and relaxation or measurement of the electron spin allows for the generation of dynamic nuclear polarization. The quantum nature of the nuclear bath, along with the interplay of coherent external fields and incoherent dynamics in these systems renders a wealth of intriguing phenomena seen in recent experiments such as electron Zeeman frequency focusing, hysteresis, and line dragging. We develop in detail a fully quantum, self-consistent theory that can be applied to such experiments and that moreover has predictive power. Our theory uses the operator sum representation formalism in order to incorporate the incoherent dynamics caused by the additional, Markovian bath, which in self-assembled dots is the vacuum field responsible for electron-hole optical recombination. The beauty of this formalism is that it reduces the complexity of the problem by encoding the joint dynamics of the external coherent and incoherent driving in an effective dynamical map that only acts on the electron spin subspace. This together with the separation of timescales in the problem allows for a tractable and analytically solvable formalism. The key role of entanglement between the electron spin and the nuclear spins in the formation of dynamic nuclear polarization naturally follows from our solution. We demonstrate the theory in detail for an optical pulsed experiment and present an in-depth discussion and physical explanation of our results.

Sophia E. Economou; Edwin Barnes

2014-04-06T23:59:59.000Z

99

Single photon emission from site-controlled InGaN/GaN quantum dots  

SciTech Connect (OSTI)

Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90?K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%–25% exhibited single photon emission at 10?K.

Zhang, Lei; Hill, Tyler A.; Deng, Hui, E-mail: dengh@umich.edu [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States)] [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States); Teng, Chu-Hsiang; Lee, Leung-Kway; Ku, Pei-Cheng, E-mail: peicheng@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)] [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

2013-11-04T23:59:59.000Z

100

Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier  

DOE Patents [OSTI]

A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

Forrest, Stephen R. (Ann Arbor, MI); Wei, Guodan (Ann Arbor, MI)

2010-07-06T23:59:59.000Z

Note: This page contains sample records for the topic "determination quantum dot" from the National Library of EnergyBeta (NLEBeta).
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We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Coupling of PbS Quantum Dots to Photonic Crystal Cavities at Room Temperature  

E-Print Network [OSTI]

We demonstrate the coupling of PbS quantum dot emission to photonic crystal cavities at room temperature. The cavities are defined in 33% Al, AlGaAs membranes on top of oxidized AlAs. Quantum dots were dissolved in Poly-methyl-methacrylate (PMMA) and spun on top of the cavities. Quantum dot emission is shown to map out the structure resonances, and may prove to be viable sources for room temperature cavity coupled single photon generation for quantum information processing applications. These results also indicate that such commercially available quantum dots can be used for passive structure characterization. The deposition technique is versatile and allows layers with different dot densities and emission wavelengths to be re-deposited on the same chip.

Ilya Fushman; Dirk Englund; Jelena Vuckovic

2005-05-14T23:59:59.000Z

102

Photoluminescence-enhanced biocompatible quantum dots by phospholipid functionalization  

SciTech Connect (OSTI)

A simple two-step strategy using phospholipid (PPL) to functionalize core/shell CdSe/ZnS quantum dots (QDs) has been described. The experimental data show that the use of S-H terminated PPL results not only in the high colloidal stability of core/shell CdSe/ZnS QDs in the aqueous phase, but also in the significant enhancement of photoluminescence. The degree of the enhancement is a function of the PPL-CdSe/ZnS QDs sample concentration. These results might be promising for future biological platform in new devices ranging from photovoltaic cells to biosensors and other devices.

Shi Yunfeng [School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China); He Peng [Department of Chemistry, North Carolina State University, Raleigh, NC 27695 (United States)], E-mail: phe@ncsu.edu; Zhu Xinyuan [School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China); Instrumental Analysis Center, Shanghai Jiao Tong University, 1954 Huashan Road, Shanghai 200030 (China)], E-mail: xyzhu@sjtu.edu.cn

2008-10-02T23:59:59.000Z

103

Activation of molecular catalysts using semiconductor quantum dots  

DOE Patents [OSTI]

Photocatalytic materials based on coupling of semiconductor nanocrystalline quantum dots (NQD) and molecular catalysts. These materials have capability to drive or catalyze non-spontaneous chemical reactions in the presence of visible radiation, ultraviolet radiation, or both. The NQD functions in these materials as a light absorber and charge generator. Following light absorption, the NQD activates a molecular catalyst adsorbed on the surface of the NQD via transfer of one or more charges (either electrons or electron-holes) from the NQD to the molecular catalyst. The activated molecular catalyst can then drive a chemical reaction. A photoelectrolytic device that includes such photocatalytic materials is also described.

Meyer, Thomas J. (Chapel Hill, NC); Sykora, Milan (Los Alamos, NM); Klimov, Victor I. (Los Alamos, NM)

2011-10-04T23:59:59.000Z

104

Towards Quantum Repeaters with Solid-State Qubits: Spin-Photon Entanglement Generation using Self-Assembled Quantum Dots  

E-Print Network [OSTI]

In this chapter we review the use of spins in optically-active InAs quantum dots as the key physical building block for constructing a quantum repeater, with a particular focus on recent results demonstrating entanglement between a quantum memory (electron spin qubit) and a flying qubit (polarization- or frequency-encoded photonic qubit). This is a first step towards demonstrating entanglement between distant quantum memories (realized with quantum dots), which in turn is a milestone in the roadmap for building a functional quantum repeater. We also place this experimental work in context by providing an overview of quantum repeaters, their potential uses, and the challenges in implementing them.

McMahon, Peter L

2015-01-01T23:59:59.000Z

105

Towards Quantum Repeaters with Solid-State Qubits: Spin-Photon Entanglement Generation using Self-Assembled Quantum Dots  

E-Print Network [OSTI]

In this chapter we review the use of spins in optically-active InAs quantum dots as the key physical building block for constructing a quantum repeater, with a particular focus on recent results demonstrating entanglement between a quantum memory (electron spin qubit) and a flying qubit (polarization- or frequency-encoded photonic qubit). This is a first step towards demonstrating entanglement between distant quantum memories (realized with quantum dots), which in turn is a milestone in the roadmap for building a functional quantum repeater. We also place this experimental work in context by providing an overview of quantum repeaters, their potential uses, and the challenges in implementing them.

Peter L. McMahon; Kristiaan De Greve

2015-01-14T23:59:59.000Z

106

Spectral dependence of the linewidth enhancement factor in quantum dot lasers  

SciTech Connect (OSTI)

The spectral analysis of amplified spontaneous emission is used to determine the linewidth enhancement factor (?-factor) in lasers based on InAs/InGaAs quantum dots (QDs) in a wide spectral range near the ground-state optical transition energy. The effect of the pump current and number of QDs on the spectral dependences of the ?-factor is examined. The temperature dependence of the spectra of the ?-factor is experimentally determined for the first time for lasers with InAs/InGaAs QDs. An explanation is suggested for the observed anomalous decrease in the ?-factor with increasing temperature.

Zubov, F. I., E-mail: fedyazu@mail.ru [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation); Shernyakov, Yu. M.; Maximov, M. V. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Zhukov, A. E. [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation); Livshits, D. A. [Innolume GmbH (Germany); Payusov, A. S.; Nadtochiy, A. M. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Savelyev, A. V.; Kryzhanovskaya, N. V. [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation); Gordeev, N. Yu. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-12-15T23:59:59.000Z

107

High Efficiency Colloidal Quantum Dot Phosphors  

SciTech Connect (OSTI)

The project showed that non-Cd containing, InP-based nanocrystals (semiconductor materials with dimensions of ~6 nm) have high potential for enabling next-generation, nanocrystal-based, on chip phosphors for solid state lighting. Typical nanocrystals fall short of the requirements for on chip phosphors due to their loss of quantum efficiency under the operating conditions of LEDs, such as, high temperature (up to 150 °C) and high optical flux (up to 200 W/cm2). The InP-based nanocrystals invented during this project maintain high quantum efficiency (>80%) in polymer-based films under these operating conditions for emission wavelengths ranging from ~530 to 620 nm. These nanocrystals also show other desirable attributes, such as, lack of blinking (a common problem with nanocrystals which limits their performance) and no increase in the emission spectral width from room to 150 °C (emitters with narrower spectral widths enable higher efficiency LEDs). Prior to these nanocrystals, no nanocrystal system (regardless of nanocrystal type) showed this collection of properties; in fact, other nanocrystal systems are typically limited to showing only one desirable trait (such as high temperature stability) but being deficient in other properties (such as high flux stability). The project showed that one can reproducibly obtain these properties by generating a novel compositional structure inside of the nanomaterials; in addition, the project formulated an initial theoretical framework linking the compositional structure to the list of high performance optical properties. Over the course of the project, the synthetic methodology for producing the novel composition was evolved to enable the synthesis of these nanomaterials at a cost approximately equal to that required for forming typical conventional nanocrystals. Given the above results, the last major remaining step prior to scale up of the nanomaterials is to limit the oxidation of these materials during the tens of thousands of hours of LED operation. Once the LED phosphor lifetime specifications are met, these nanocrystals will enable white LEDs for solid state lighting to simultaneously have increased efficiency and improved light quality, in addition to enabling the creation of custom light spectrums. These improvements to white LEDs will help accelerate the adoption of SSL, leading to large savings in US and worldwide energy costs.

Kahen, Keith

2013-12-31T23:59:59.000Z

108

Theory of Electro-optic Modulation via a Quantum Dot Coupled to a Nano-resonator  

E-Print Network [OSTI]

In this paper, we analyze the performance of an electro-optic modulator based on a single quantum dot strongly coupled to a nano-resonator, where electrical control of the quantum dot frequency is achieved via quantum confined Stark effect. Using realistic system parameters, we show that modulation speeds of a few tens of GHz are achievable with this system, while the energy per switching operation can be as small as 0.5 fJ. In addition, we study the non-linear distortion, and the effect of pure quantum dot dephasing on the performance of the modulator.

Arka Majumdar; Nicolas Manquest; Andrei Faraon; Jelena Vuckovic

2009-11-27T23:59:59.000Z

109

Energy spectra of two electrons in a circular quantum dot  

E-Print Network [OSTI]

The electron interaction energy of two interacting electrons in a circular quantum dot (with hard wall confinement) is investigated in the framework of the semi-classical Wentzel-Kramers-Brillouin (WKB) approximation. The two electrons are assumed to be in an infinitely deep well of radius $r_0$, in a simple configuration with one electron fixed at the origin. The corresponding Schrodinger equation, with hard wall boundary conditions, is also solved exactly by numerical integration. It is observed that the agreement between the two energy values is quite good, suggesting that the WKB approximation works well for such a confined quantum system as well. This may provide motivation to extend this to more realistic confined potentials.

Anjana Sinha; Y. P. Varshni

2002-08-27T23:59:59.000Z

110

Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions  

SciTech Connect (OSTI)

In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.

Pinto, S. R. C.; Ramos, M. M. D.; Gomes, M. J. M. [University of Minho, Centre of Physics and Physics Department, Braga 4710-057 (Portugal); Buljan, M. [Ruder Boskovic Institute, Bijenicka cesta 54, Zagreb 10000 (Croatia); Chahboun, A. [University of Minho, Centre of Physics and Physics Department, Braga 4710-057 (Portugal); Physics Department, FST Tanger, Tanger BP 416 (Morocco); Roldan, M. A.; Molina, S. I. [Departamento de Ciencia de los Materiales e Ing. Metalurgica y Q. I., Universidad de Cadiz, Cadiz (Spain); Bernstorff, S. [Sincrotrone Trieste, SS 14 km163, 5, Basovizza 34012 (Italy); Varela, M.; Pennycook, S. J. [Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Barradas, N. P.; Alves, E. [Instituto Superior Tecnico e Instituto Tecnologico e Nuclear-, EN10, Sacavem 2686-953 (Portugal)

2012-04-01T23:59:59.000Z

111

Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions  

SciTech Connect (OSTI)

In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.

Pinto, S. [University of Minho, Portugal; Roldan Gutierrez, Manuel A [ORNL; Ramos, M. M.D. [University of Minho, Portugal; Gomes, M.J.M. [University of Minho, Portugal; Molina, S. I. [Universidad de Cadiz, Spain; Pennycook, Stephen J [ORNL; Varela del Arco, Maria [ORNL; Buljan, M. [R. Boskovic Institute, Zagreb, Croatia; Barradas, N. [Instituto Tecnologico e Nuclear (ITN), Lisbon, Portugal; Alves, E. [Instituto Tecnologico e Nuclear (ITN), Lisbon, Portugal; Chahboun, A. [FST Tanger, Morocco; Bernstorff, S. [Sincrotrone Trieste, Basovizza, Italy

2012-01-01T23:59:59.000Z

112

Green synthesis of highly efficient CdSe quantum dots for quantum-dots-sensitized solar cells  

SciTech Connect (OSTI)

Green synthesis of CdSe quantum dots for application in the quantum-dots-sensitized solar cells (QDSCs) is investigated in this work. The CdSe QDs were prepared with glycerol as the solvent, with sharp emission peak, full width at half maximum around 30?nm, and absorption peak from 475?nm to 510?nm. The reaction is environmental friendly and energy saving. What's more, the green synthesized CdSe QDs are coherence to the maximum remittance region of the solar spectrum and suitable as sensitizers to assemble onto TiO{sub 2} electrodes for cell devices application. What's more, the dynamic procedure of the carriers' excitation, transportation, and recombination in the QDSCs are discussed. Because the recombination of the electrons from the conduction band of TiO{sub 2}'s to the electrolyte affects the efficiency of the solar cells greatly, 3-Mercaptopropionic acid capped water-dispersible QDs were used to cover the surface of TiO{sub 2}. The resulting green synthesized CdSe QDSCs with Cu{sub 2}S as the electrode show a photovoltaic performance with a conversion efficiency of 3.39%.

Gao, Bing; Shen, Chao; Zhang, Mengya; Yuan, Shuanglong; Yang, Yunxia, E-mail: yangyunxia@ecust.edu.cn, E-mail: grchen@ecust.edu.cn; Chen, Guorong, E-mail: yangyunxia@ecust.edu.cn, E-mail: grchen@ecust.edu.cn [Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237 (China); Zhang, Bo [Department of Physics, East China University of Science and Technology, Shanghai 200237 (China)

2014-05-21T23:59:59.000Z

113

Intersublevel dephasing in InAs/GaAs quantum dots below the Reststrahlen band  

SciTech Connect (OSTI)

Using transient four-wave mixing in the terahertz range, we have measured the s-p inter-sublevel dephasing time in self-assembled InAs/GaAs quantum dots for transition energies below the Reststrahlen band. Dephasing times of up to 600?ps at a photon energy of 18?meV have been determined. By comparing pump-probe and four-wave mixing measurements, we show that there is no significant influence of any pure dephasing process at low temperature. The linear temperature dependence is consistent with acoustic phonon scattering.

Teich, M., E-mail: m.teich@hzdr.de; Stephan, D. R.; Helm, M. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany) [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany); Technische Universität Dresden, 01062 Dresden (Germany); Winnerl, S.; Schneider, H. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany)] [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany); Wilson, L. R. [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom)] [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom)

2013-12-16T23:59:59.000Z

114

Mid infrared optical properties of Ge/Si quantum dots with different doping level  

SciTech Connect (OSTI)

Optical characterization of the Ge/Si quantum dots using equilibrium and photo-induced absorption spectroscopy in the mid-infrared spectral range was performed in this work. Equilibrium absorption spectra were measured in structures with various doping levels for different light polarizations. Photo-induced absorption spectra measured in undoped structure under interband optical excitation of non-equilibrium charge carriers demonstrate the same features as doped sample in equilibrium conditions. Hole energy spectrum was determined from the analysis of experimental data.

Sofronov, A. N.; Firsov, D. A.; Vorobjev, L. E.; Shalygin, V. A.; Panevin, V. Yu.; Vinnichenko, M. Ya. [St. Petersburg State Polytechnic University, Polytechnicheskaya str. 29, St. Petersburg (Russian Federation); Tonkikh, A. A. [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); Danilov, S. N. [University of Regensburg, Regensburg (Germany)

2013-12-04T23:59:59.000Z

115

Far off-resonant coupling between photonic crystal microcavity and single quantum dot with resonant excitation  

SciTech Connect (OSTI)

In this paper, we experimentally demonstrate that with sub-nanowatt coherent s-shell excitation of a single InAs quantum dot, off-resonant coupling of 4.1?nm is possible between L3 photonic crystal microcavity and the quantum dot at 50?K. This resonant excitation reduces strongly the effect of surrounding charges to quantum dot, multiexciton complexes and pure dephasing. It seems that this far off-resonant coupling is the result of increased number of acoustical phonons due to high operating temperature of 50?K. The 4.1?nm detuning is the largest amount for this kind of coupling.

Banihashemi, Mehdi; Ahmadi, Vahid, E-mail: v-ahmadi@modares.ac.ir [Department of Electrical and Computer Engineering, Tarbiat Modares University, Tehran, P.O. Box 14115-194 (Iran, Islamic Republic of)] [Department of Electrical and Computer Engineering, Tarbiat Modares University, Tehran, P.O. Box 14115-194 (Iran, Islamic Republic of); Nakamura, Tatsuya; Kojima, Takanori; Kojima, Kazunobu; Noda, Susumu [Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510 (Japan)] [Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510 (Japan)

2013-12-16T23:59:59.000Z

116

Phonon-mediated coupling between quantum dots through an off-resonant microcavity  

E-Print Network [OSTI]

We present experimental results showing phonon-mediated coupling between two quantum dots embedded inside a photonic crystal microcavity. With only one of the dots being spectrally close to the cavity, we observe both frequency up-conversion and down-conversion of the pump light via a $\\sim1.2$ THz phonon. We demonstrate this process for both weak and strong regimes of dot-cavity coupling, and provide a simple theoretical model explaining our observations.

Arka Majumdar; Michal Bajcsy; Armand Rundquist; Erik Kim; Jelena Vuckovic

2011-11-30T23:59:59.000Z

117

Engineering of quantum dot photon sources via electro-elastic fields  

E-Print Network [OSTI]

The possibility to generate and manipulate non-classical light using the tools of mature semiconductor technology carries great promise for the implementation of quantum communication science. This is indeed one of the main driving forces behind ongoing research on the study of semiconductor quantum dots. Often referred to as artificial atoms, quantum dots can generate single and entangled photons on demand and, unlike their natural counterpart, can be easily integrated into well-established optoelectronic devices. However, the inherent random nature of the quantum dot growth processes results in a lack of control of their emission properties. This represents a major roadblock towards the exploitation of these quantum emitters in the foreseen applications. This chapter describes a novel class of quantum dot devices that uses the combined action of strain and electric fields to reshape the emission properties of single quantum dots. The resulting electro-elastic fields allow for control of emission and binding energies, charge states, and energy level splittings and are suitable to correct for the quantum dot structural asymmetries that usually prevent these semiconductor nanostructures from emitting polarization-entangled photons. Key experiments in this field are presented and future directions are discussed.

Rinaldo Trotta; Armando Rastelli

2015-03-01T23:59:59.000Z

118

Distinctive Signature of Indium Gallium Nitride Quantum Dot Lasing in Microdisks Cavities  

E-Print Network [OSTI]

Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light matter interactions and realize practical devices such as efficient light emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons for these limitations by focusing on the simpler, limited-mode microdisk cavities, and by carrying out comparisons of lasing dynamics in those cavities using varying gain media including InGaN quantum wells, fragmented quantum wells, and a combination of fragmented quantum wells with quantum dots. For each gain medium, we utilize the distinctive, high quality (Q~5500) modes of the cavities, and the change in the highest ...

Woolf, Alexander; Aharanovich, Igor; Zhu, Tongtong; Niu, Nan; Wang, Danqing; Oliver, Rachel A; Hu, Evelyn L

2014-01-01T23:59:59.000Z

119

Enlarged symmetry and coherence in arrays of quantum dots A. V. Onufriev and J. B. Marston  

E-Print Network [OSTI]

. A Hubbard model then describes a pillar array of coupled dots, and at half-filling the system can be mapped materials. Recent advances in nanofabrication tech- niques offer the possibility of constructing artificial- teractions that lift the degeneracy. However, as Stafford and Das Sarma noticed,3 semiconducting quantum dots

Onufriev, Alexey

120

Location deterministic biosensing from quantum-dot-nanowire assemblies  

SciTech Connect (OSTI)

Semiconductor quantum dots (QDs) with high fluorescent brightness, stability, and tunable sizes, have received considerable interest for imaging, sensing, and delivery of biomolecules. In this research, we demonstrate location deterministic biochemical detection from arrays of QD-nanowire hybrid assemblies. QDs with diameters less than 10?nm are manipulated and precisely positioned on the tips of the assembled Gold (Au) nanowires. The manipulation mechanisms are quantitatively understood as the synergetic effects of dielectrophoretic (DEP) and alternating current electroosmosis (ACEO) due to AC electric fields. The QD-nanowire hybrid sensors operate uniquely by concentrating bioanalytes to QDs on the tips of nanowires before detection, offering much enhanced efficiency and sensitivity, in addition to the position-predictable rationality. This research could result in advances in QD-based biomedical detection and inspires an innovative approach for fabricating various QD-based nanodevices.

Liu, Chao [Materials Science and Engineering Program, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Kim, Kwanoh [Department of Mechanical Engineering, University of Texas at Austin, Austin, Texas 78712 (United States); Fan, D. L., E-mail: dfan@austin.utexas.edu [Materials Science and Engineering Program, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Department of Mechanical Engineering, University of Texas at Austin, Austin, Texas 78712 (United States)

2014-08-25T23:59:59.000Z

Note: This page contains sample records for the topic "determination quantum dot" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

High performance tunnel injection quantum dot comb laser  

SciTech Connect (OSTI)

A high-speed multiwavelength quantum dot comb laser, grown by molecular beam epitaxy, is demonstrated. The device is characterized with a 75.9 nm (full width at half maximum) and a 91.4 nm (DELTA{sub -15dB}) wide lasing spectrum. There are 105 and 185 simultaneously emitted longitudinal modes with a maximum channel intensity nonuniformity of less than 3 dB in the spectral range of 1231-1252 nm and 1274-1311 nm, respectively, for a laser with 1040 mum cavity length. The channel spacing can be tuned with cavity length and remains invariant in the temperature range of 300-323 K. The small signal modulation bandwidth is 7.5 GHz.

Lee, C.-S.; Guo Wei; Basu, Debashish; Bhattacharya, Pallab [Department of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2010-03-08T23:59:59.000Z

122

Fluorescence quenching of CdSe quantum dots on graphene  

SciTech Connect (OSTI)

We studied systematically the fluorescence quenching of CdSe quantum dots (QDs) on graphene and its multilayers, as well as graphene oxide (GO) and reduced graphene oxide (rGO). Raman intensity of QDs was used as a quantitatively measurement of its concentration in order to achieve a reliable quenching factor (QF). It was found that the QF of graphene (?13.1) and its multilayers is much larger than rGO (?4.4), while GO (?1.5) has the lowest quenching efficiency, which suggests that the graphitic structure is an important factor for quenching the fluorescence of QDs. It was also revealed that the QF of graphene is not strongly dependent on its thicknesses.

Guo, Xi Tao; Hua Ni, Zhen, E-mail: zhni@seu.edu.cn; Yan Nan, Hai; Hui Wang, Wen [Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189 (China)] [Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189 (China); Yan Liao, Chun [Physics Department, National Photoelectric Technology and Functional Materials and Application of Science and Technology International Cooperation Base, Northwest University, Xi'an 710069 (China)] [Physics Department, National Photoelectric Technology and Functional Materials and Application of Science and Technology International Cooperation Base, Northwest University, Xi'an 710069 (China); Zhang, Yan; Wei Zhao, Wei [Jiangsu Key Laboratory for Design and Fabrication of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211189 (China)] [Jiangsu Key Laboratory for Design and Fabrication of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211189 (China)

2013-11-11T23:59:59.000Z

123

Quantum dots in bio-imaging: Revolution by the small  

SciTech Connect (OSTI)

Visual analysis of biomolecules is an integral avenue of basic and applied biological research. It has been widely carried out by tagging of nucleotides and proteins with traditional fluorophores that are limited in their application by features such as photobleaching, spectral overlaps, and operational difficulties. Quantum dots (QDs) are emerging as a superior alternative and are poised to change the world of bio-imaging and further its applications in basic and applied biology. The interdisciplinary field of nanobiotechnology is experiencing a revolution and QDs as an enabling technology have become a harbinger of this hybrid field. Within a decade, research on QDs has evolved from being a pure science subject to the one with high-end commercial applications.

Arya, Harinder [Gene Function Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562 (Japan); Kaul, Zeenia [Gene Function Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562 (Japan); Wadhwa, Renu [Gene Function Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562 (Japan); Taira, Kazunari [Gene Function Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562 (Japan); Hirano, Takashi [Institute for Biological Resources and Functions, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, 7 Ibaraki 305-8562 (Japan); Kaul, Sunil C. [Gene Function Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562 (Japan)]. E-mail: s-kaul@aist.go.jp

2005-04-22T23:59:59.000Z

124

Valley pair qubits in double quantum dots of gapped graphene  

E-Print Network [OSTI]

The rise of graphene opens a new door to qubit implementation, as discussed in the recent proposal of valley pair qubits in double quantum dots of gapped graphene (Wu et al., arXiv: 1104.0443 [cond-mat.mes-hall]). The work here presents the comprehensive theory underlying the proposal. It discusses the interaction of electrons with external magnetic and electric fields in such structures. Specifically, it examines a strong, unique mechanism, i.e., the analogue of the 1st-order relativistic effect in gapped graphene. This mechanism is state mixing free and allows, together with the electrically tunable exchange coupling, a fast, all-electric manipulation of qubits via electric gates, in the time scale of ns. The work also looks into the issue of fault tolerance in a typical case, yielding at 10oK a long qubit coherence time (~O(ms)).

G. Y. Wu; N. -Y. Lue; L. Chang

2011-07-03T23:59:59.000Z

125

Ultra-low density InAs quantum dots  

SciTech Connect (OSTI)

We show that InAs quantum dots (QDs) can be grown by molecular beam epitaxy (MBE) with an ultralow density of sin 10{sup 7} cm{sup -2} without any preliminary or post-growth surface treatment. The strain-induced QD formation proceeds via the standard Stranski-Krastanow mechanism, where the InAs coverage is decreased to 1.3-1.5 monolayers (MLs). By using off-cut GaAs (100) substrates, we facilitate the island nucleation in this subcritical coverage range without any growth interruption. The QD density dependences on the InAs coverage are studied by photoluminescence, atomic force microscopy, transmission electron microscopy, and are well reproduced by the universal double exponential shapes. This method enables the fabrication of InAs QDs with controllable density in the range 10{sup 7}-10{sup 8} cm{sup -2}, exhibiting bright photoluminescence.

Dubrovskii, V. G., E-mail: dubrovskii@mail.ioffe.ru; Cirlin, G. E. [St. Petersburg Academic University Russian Academy of Sciences (Russian Federation)] [St. Petersburg Academic University Russian Academy of Sciences (Russian Federation); Brunkov, P. A. [Ioffe Physical Technical Institute Russian Academy of Sciences (Russian Federation)] [Ioffe Physical Technical Institute Russian Academy of Sciences (Russian Federation); Perimetti, U.; Akopyan, N. [Delft University of Technology, Quantum Transport, Kavli Institute of Nanoscience (Netherlands)] [Delft University of Technology, Quantum Transport, Kavli Institute of Nanoscience (Netherlands)

2013-10-15T23:59:59.000Z

126

A comparison between semi-spheroid- and dome-shaped quantum dots coupled to wetting layer  

SciTech Connect (OSTI)

During the epitaxial growth method, self-assembled semi-spheroid-shaped quantum dots (QDs) are formed on the wetting layer (WL). However for sake of simplicity, researchers sometimes assume semi-spheroid-shaped QDs to be dome-shaped (hemisphere). In this work, a detailed and comprehensive study on the difference between electronic and transition properties of dome- and semi-spheroid-shaped quantum dots is presented. We will explain why the P-to-S intersubband transition behaves the way it does. The calculated results for intersubband P-to-S transition properties of quantum dots show two different trends for dome-shaped and semi-spheroid-shaped quantum dots. The results are interpreted using the probability of finding electron inside the dome/spheroid region, with emphasis on the effects of wetting layer. It is shown that dome-shaped and semi-spheroid-shaped quantum dots feature different electronic and transition properties, arising from the difference in lateral dimensions between dome- and semi-spheroid-shaped QDs. Moreover, an analogy is presented between the bound S-states in the quantum dots and a simple 3D quantum mechanical particle in a box, and effective sizes are calculated. The results of this work will benefit researchers to present more realistic models of coupled QD/WL systems and explain their properties more precisely.

Shahzadeh, Mohammadreza; Sabaeian, Mohammad, E-mail: Sabaeian@scu.ac.ir [Physics Department, Faculty of Science, Shahid Chamran University of Ahvaz, Ahvaz, 61357-43135 (Iran, Islamic Republic of)

2014-06-15T23:59:59.000Z

127

Cryogenic spectroscopy of ultra-low density colloidal lead chalcogenide quantum dots on chip-scale optical cavities towards single quantum dot near-infrared cavity QED  

E-Print Network [OSTI]

We present evidence of cavity quantum electrodynamics from a sparse density of strongly quantum-confined Pb-chalcogenide nanocrystals (between 1 and 10) approaching single-dot levels on moderately high-Q mesoscopic silicon optical cavities. Operating at important near-infrared (1500-nm) wavelengths, large enhancements are observed from devices and strong modifications of the QD emission are achieved. Saturation spectroscopy of coupled QDs is observed at 77K, highlighting the modified nanocrystal dynamics for quantum information processing.

Ranojoy Bose; Jie Gao; James F. McMillan; Alex D. Williams; Chee Wei Wong

2008-12-01T23:59:59.000Z

128

Development of low-temperature solution-processed colloidal quantum dot-based solar cells  

E-Print Network [OSTI]

Solution-processed solar cells incorporating organic semiconductors and inorganic colloidal quantum dots (QDs) are potential alternatives to conventional solar cells fabricated via vacuum or high-temperature sintering ...

Chang, Liang-Yi, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

129

Efficient light emitting devices utilizing CdSe(ZnS) quantum dots in organic host matrices  

E-Print Network [OSTI]

We demonstrate efficient electroluminescence from thin film structures containing core-shell CdSe(ZnS) quantum dots dispersed in molecular organic host materials. In the most efficient devices, excitons are created on the ...

Coe-Sullivan, Seth (Seth Alexander)

2002-01-01T23:59:59.000Z

130

Luminescent, quantum dot-based anti-reflective coatings for crystalline silicon photovoltaics  

E-Print Network [OSTI]

This thesis demonstrates and evaluates the potential application of luminescent quantum dot/polymer solutions on crystalline silicon photovoltaics. After spin coating the QD/polymer onto silicon photodiodes, an increase ...

Bruer, Garrett (Garrett A.)

2010-01-01T23:59:59.000Z

131

Colloidal quantum-dot light-emitting diodes with metal-oxide charge  

E-Print Network [OSTI]

across the pixel area, and fabrication required the specialized deposition technique of energy-neutral over previously reported structures8,10 . Previous efforts at building colloidal quantum-dot (QD) LEDs concentrations and energy-band

132

Exchange Control of Nuclear Spin Diffusion in a Double Quantum Dot  

E-Print Network [OSTI]

The influence of gate-controlled two-electron exchange on the relaxation of nuclear polarization in small ensembles (N?10[superscript 6]) of nuclear spins is examined in a GaAs double quantum dot system. Waiting in the ...

Reilly, D. J.

133

Nuclear spin dynamics in double quantum dots: Fixed points, transients, and intermittency  

E-Print Network [OSTI]

Transport through spin-blockaded quantum dots provides a means for electrical control and detection of nuclear spin dynamics in the host material. Although such experiments have become increasingly popular in recent years, ...

Rudner, M. S.

134

Lateral heterojunction photodetector consisting of molecular organic and colloidal quantum dot thin films  

E-Print Network [OSTI]

exception being the dye- sensitized solar cell.3 Owing to its unique geometry, the present device also and that is sensitized across visible wavelengths by a thin film of colloidal CdSe nanocrystal quantum dots QDs . High

135

Gain dynamics of quantum dot devices for dual-state operation  

SciTech Connect (OSTI)

Ground state gain dynamics of In(Ga)As-quantum dot excited state lasers are investigated via single-color ultrafast pump-probe spectroscopy below and above lasing threshold. Two-color pump-probe experiments are used to localize lasing and non-lasing quantum dots within the inhomogeneously broadened ground state. Single-color results yield similar gain recovery rates of the ground state for lasing and non-lasing quantum dots decreasing from 6 ps to 2 ps with increasing injection current. We find that ground state gain dynamics are influenced solely by the injection current and unaffected by laser operation of the excited state. This independence is promising for dual-state operation schemes in quantum dot based optoelectronic devices.

Kaptan, Y., E-mail: yuecel.kaptan@physik.tu-berlin.de; Herzog, B.; Kolarczik, M.; Owschimikow, N.; Woggon, U. [Institut für Optik und Atomare Physik, Technische Universität Berlin, Berlin (Germany); Schmeckebier, H.; Arsenijevi?, D.; Bimberg, D. [Institut für Festkörperphysik, Technische Universität Berlin, Berlin (Germany); Mikhelashvili, V.; Eisenstein, G. [Technion Institute of Technology, Faculty of Electrical Engineering, Haifa (Israel)

2014-06-30T23:59:59.000Z

136

The physics and chemistry of transport in CdSe quantum dot solids  

E-Print Network [OSTI]

Semiconductor quantum dots (QDs) have tunable opto-electronic properties and can be chemically synthesized and manipulated with ease, making them a promising novel material for many diverse applications. An understanding ...

Jarosz, Mirna, 1981-

2004-01-01T23:59:59.000Z

137

Electrical excitation of colloidally synthesized quantum dots in metal oxide structures  

E-Print Network [OSTI]

This thesis develops methods for integrating colloidally synthesized quantum dots (QDs) and metal oxides in optoelectronic devices, presents three distinct light emitting devices (LEDs) with metal oxides surrounding a QD ...

Wood, Vanessa Claire

2010-01-01T23:59:59.000Z

138

InGaAs Quantum Dots Coupled to a Reservoir of Nonequilibrium Free Carriers  

E-Print Network [OSTI]

We discuss the impact of a 2D-charged carrier reservoir for high-speed optical amplification and modulated lasing in quantum dot (QD)-based devices by testing the amplification of short trains of high power, femtosecond ...

Laemmlin, Matthias

139

E-Print Network 3.0 - alloy quantum dots Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

a dilute nitride: InAsNGaAsSb, GaInAsInP and In... . QUANTUM DOT INTERMEDIATE BAND SOLAR CELL MATERIAL SYSTEMS WITH NEGLIGIBLE VALENCE BAND OFFSETS Michael Y... ABSTRACT In...

140

Developing an array of site-controlled pyramidal quantum dots emitting polarization-entangled photons  

SciTech Connect (OSTI)

We present a site-controlled, highly symmetric quantum dot system with a density of at least 15 % of polarization-entangled photon emitters. Fidelity values of the entangled state as high as 0.721±0.043 were found.

Juska, G.; Dimastrodonato, V.; Mereni, L. O.; Gocalinska, A.; Pelucchi, E. [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland)

2013-12-04T23:59:59.000Z

Note: This page contains sample records for the topic "determination quantum dot" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Quantum Dots Promise to Significantly Boost Solar Cell Efficiencies (Fact Sheet)  

SciTech Connect (OSTI)

In the search for a third generation of solar-cell technologies, a leading candidate is the use of 'quantum dots' -- tiny spheres of semiconductor material measuring only about 2-10 billionths of a meter in diameter. Quantum dots have the potential to dramatically increase the efficiency of converting sunlight into energy -- perhaps even doubling it in some devices -- because of their ability to generate more than one bound electron-hole pair, or exciton, per incoming photon. NREL has produced quantum dots using colloidal suspensions; then, using molecular self-assembly, they have been fabricated into the first-ever quantum-dot solar cells. While these devices operate with only 4.4% efficiency, they demonstrate the capability for low-cost manufacturing.

Not Available

2013-08-01T23:59:59.000Z

142

Efficiency loss mechanisms in colloidal quantum-dot light-emitting diodes  

E-Print Network [OSTI]

Saturated and tunable emission colors make colloidal quantum-dot light-emitting diodes (QD-LEDs) interesting for the next generation of display and lighting technologies. However, there still remain various hurdles to the ...

Shirasaki, Yasuhiro

2013-01-01T23:59:59.000Z

143

Two-Photon Oxygen Sensing with Quantum Dot-Porphyrin Conjugates  

E-Print Network [OSTI]

Supramolecular assemblies of a quantum dot (QD) associated to palladium(II) porphyrins have been developed to detect oxygen (pO[subscript 2]) in organic solvents. Palladium porphyrins are sensitive in the 0–160 Torr range, ...

Lemon, Christopher M.

144

Narrow-Band Absorption-Enhanced Quantum Dot/J-Aggregate Conjugates  

E-Print Network [OSTI]

We report narrow-band absorption enhancement of semiconductor nanocrystals via Förster resonance energy transfer from cyanine J-aggregates. These J-aggregated dyes associate electrostatically with short quantum-dot (QD) ...

Walker, Brian J.

145

(In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties  

SciTech Connect (OSTI)

Self-assembled (In,Mn)As quantum dots are synthesized by molecular-beam epitaxy on GaAs (001) substrates. The experimental results obtained by transmission electron microscopy show that doping of the central part of the quantum dots with Mn does not bring about the formation of structural defects. The optical properties of the samples, including those in external magnetic fields, are studied.

Bouravleuv, A. D., E-mail: bour@mail.ioffe.ru; Nevedomskii, V. N. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Ubyivovk, E. V. [St. Petersburg State University (Russian Federation)] [St. Petersburg State University (Russian Federation); Sapega, V. F. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Khrebtov, A. I. [St. Petersburg Academic University, Nanotechnology Research and Education Centre (Russian Federation)] [St. Petersburg Academic University, Nanotechnology Research and Education Centre (Russian Federation); Samsonenko, Yu. B.; Cirlin, G. E.; Ustinov, V. M. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-08-15T23:59:59.000Z

146

Two photon luminescence from quantum dots using broad and narrowband ultrafast laser pulses  

E-Print Network [OSTI]

TWO PHOTON LUMINESCENCE FROM QUANTUM DOTS USING BROAD AND NARROWBAND ULTRAFAST LASER PULSES A Thesis by HARIBHASKAR BALASUBRAMANIAN Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment... of the requirements for the degree of MASTER OF SCIENCE December 2007 Major Subject: Biomedical Engineering TWO PHOTON LUMINESCENCE FROM QUANTUM DOTS USING BROAD AND NARROWBAND ULTRAFAST LASER PULSES A Thesis by HARIBHASKAR...

Balasubramanian, Haribhaskar

2008-10-10T23:59:59.000Z

147

Off-resonant coupling between a single quantum dot and a nanobeam photonic crystal cavity  

E-Print Network [OSTI]

We demonstrate off-resonant coupling between a single quantum dot and a nanobeam photonic crystal cavity, under resonant excitation of the quantum dot or the cavity. These results are consistent with previous descriptions of off-resonant coupling as an incoherent phonon-mediated process. The extension of this phenomenon to a nanobeam photonic crystal cavity presents interesting possibilities for coherent control of this interaction by tailoring the phonon density of states.

Armand Rundquist; Arka Majumdar; Jelena Vuckovic

2011-10-05T23:59:59.000Z

148

Ultrafast photon-photon interaction in a strongly coupled quantum dot-cavity system  

E-Print Network [OSTI]

We study dynamics of the interaction between two weak light beams mediated by a strongly coupled quantum dot-photonic crystal cavity system. First, we perform all optical switching of a weak continuous-wave signal with a pulsed control beam, and then perform switching between two pulsed beams (40ps pulses) at the single photon level. Our results show that the quantum dot-nanocavity system creates strong, controllable interactions at the single photon level.

Dirk Englund; Arka Majumdar; Michal Bajcsy; Andrei Faraon; Pierre Petroff; Jelena vuckovic

2011-07-14T23:59:59.000Z

149

Effect of quantum dot position and background doping on the performance of quantum dot enhanced GaAs solar cells  

SciTech Connect (OSTI)

The effect of the position of InAs quantum dots (QD) within the intrinsic region of pin-GaAs solar cells is reported. Simulations suggest placing the QDs in regions of reduced recombination enables a recovery of open-circuit voltage (V{sub OC}). Devices with the QDs placed in the center and near the doped regions of a pin-GaAs solar cell were experimentally investigated. While the V{sub OC} of the emitter-shifted device was degraded, the center and base-shifted devices exhibited V{sub OC} comparable to the baseline structure. This asymmetry is attributed to background doping which modifies the recombination profile and must be considered when optimizing QD placement.

Driscoll, Kristina, E-mail: kmdsps@rit.edu; Bennett, Mitchell F.; Polly, Stephen J.; Forbes, David V.; Hubbard, Seth M., E-mail: smhsps@rit.edu [NanoPower Research Laboratories, Rochester Institute of Technology, Rochester, New York (United States)

2014-01-13T23:59:59.000Z

150

Strain-induced vertical self-organization of semiconductor quantum dots: A computational study  

SciTech Connect (OSTI)

Atomistic strain simulations based on the valence force field method are employed to study the vertical arrangements of semiconductor quantum dot (QD) multilayers. The effects of the QD shape, dimensions, and materials parameters are systematically investigated, varying independently the following parameters: spacer width H, QD lateral spacing D, base b, and height h, slope of the side facets, elastic properties of the dot and the substrate materials, and lattice mismatch between the dot and the substrate. The transition between vertically aligned and anti-aligned structures is found to be determined mainly by the ratios H/D and b/D, as well as by the strain anisotropy of the substrate and to a lesser extent of the QD. The dependence on the QD height h is significant only for steep side facets and large aspect ratios h/b, and the effects of the lattice mismatch strain and the bulk elastic moduli are found to be negligible. The comparison with experimental data shows an excellent agreement with the results from the simulations, demonstrating that the presented analysis results in precise theoretical predictions for the vertical self-organization regime in a wide range of QD materials systems.

Shtinkov, N., E-mail: nshtinkov@uottawa.ca [Department of Physics, University of Ottawa, 150 Louis Pasteur, Ottawa (Ontario) K1N 6N5 (Canada)

2013-12-28T23:59:59.000Z

151

Quantum Dot Solar Cells: High Efficiency through Multiple Exciton Generation  

SciTech Connect (OSTI)

Impact ionization is a process in which absorbed photons in semiconductors that are at least twice the bandgap can produce multiple electron-hole pairs. For single-bandgap photovoltaic devices, this effect produces greatly enhanced theoretical thermodynamic conversion efficiencies that range from 45-85%, depending upon solar concentration, the cell temperature, and the number of electron-hole pairs produced per photon. For quantum dots (QDs), electron-hole pairs exist as excitons. We have observed astoundingly efficient multiple exciton generation (MEG) in QDs of PbSe (bulk Eg = 0.28 eV), ranging in diameter from 3.9 to 5.7nm (Eg = 0.73, 0.82, and 0.91 eV, respectively). The effective masses of electron and holes are about equal in PbSe, and the onset for efficient MEG occurs at about three times the QD HOMO-LUMO transition (its ''bandgap''). The quantum yield rises quickly after the onset and reaches 300% at 4 x Eg (3.64 eV) for the smallest QD; this means that every QD in the sample produces three electron-hole pairs/photon.

Hanna, M. C.; Ellingson, R. J.; Beard, M.; Yu, P.; Micic, O. I.; Nozik, A. J.; c.

2005-01-01T23:59:59.000Z

152

Ultrafast dynamics of strongly coupled quantum dot-nanocavity systems  

E-Print Network [OSTI]

We investigate the influence of exciton-phonon coupling on the dynamics of a strongly coupled quantum dot-photonic crystal cavity system and explore the effects of this interaction on different schemes for non-classical light generation. By performing time-resolved measurements, we map out the detuning-dependent polariton lifetime and extract the spectrum of the polariton-to-phonon coupling. Photon-blockade experiments are presented for different pulse-length and detuning conditions that are in very good agreement with quantum-optical simulations; we demonstrate that achieving high-fidelity photon blockade requires an intricate understanding of this parameter space. Furthermore, we show that detuned photon blockade, which is more efficient than resonant photon blockade, is also more dramatically affected by phonons. Finally, we achieve coherent control of the polariton states of a strongly coupled system and demonstrate that their efficient coupling to phonons can be exploited for novel concepts in high-fidelity single photon generation.

Kai Müller; Kevin A. Fischer; Armand Rundquist; Constantin Dory; Konstantinos G. Lagoudakis; Tomas Sarmiento; Victoria Borish; Yousif A. Kelaita; Jelena Vu?kovi?

2015-03-18T23:59:59.000Z

153

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots  

SciTech Connect (OSTI)

The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)] [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)] [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Física, Universidade Federal do Ceará, P.O. Box 6030, Fortaleza–CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain)] [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goñi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)] [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)

2014-01-06T23:59:59.000Z

154

Gates controlled parallel-coupled double quantum dot on both single layer and bilayer graphene  

E-Print Network [OSTI]

Here we report the fabrication and quantum transport measurements of gates controlled parallel-coupled double quantum dot on both bilayer and single layer graphene. It is shown that the interdot coupling strength of the parallel double dots can be effectively tuned from weak to strong regime by both the in-plane plunger gates and back gate. All the relevant energy scales and parameters of the graphene parallel-coupled double dot can be extracted from the honeycomb charge stability diagrams revealed through the transport measurements.

Lin-Jun Wang; Guo-Ping Guo; Da Wei; Gang Cao; Tao Tu; Ming Xiao; Guang-Can Guo; A. M. Chang

2011-04-22T23:59:59.000Z

155

Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes  

SciTech Connect (OSTI)

We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve tunnel injection, relatively low composition AlGaN is used for n- and p-type layers to simultaneously take advantage of effective band alignment and efficient doping. The small height of the quantum dots results in short-wavelength emission and are simultaneously an effective tool to fight the reduction of oscillator strength from quantum-confined Stark effect due to polarization fields. The strong quantum confinement results in room-temperature electroluminescence peaks at 261 and 340 nm, well above the 365 nm bandgap of bulk GaN. The demonstration opens the doorway to exploit many varied features of quantum dot physics to realize high-efficiency short-wavelength light sources.

Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir; Verma, Amit; Grace Xing, Huili; Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)] [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)

2013-01-28T23:59:59.000Z

156

Evaluating charge noise acting on semiconductor quantum dots in the circuit quantum electrodynamics architecture  

SciTech Connect (OSTI)

We evaluate the charge noise acting on a GaAs/GaAlAs based semiconductor double quantum dot dipole-coupled to the voltage oscillations of a superconducting transmission line resonator. The in-phase (I) and the quadrature (Q) components of the microwave tone transmitted through the resonator are sensitive to charging events in the surrounding environment of the double dot with an optimum sensitivity of 8.5×10{sup ?5}?e/?(Hz). A low frequency 1/f type noise spectrum combined with a white noise level of 6.6×10{sup ?6} e{sup 2}/Hz above 1?Hz is extracted, consistent with previous results obtained with quantum point contact charge detectors on similar heterostructures. The slope of the 1/f noise allows to extract a lower bound for the double-dot charge qubit dephasing rate which we compare to the one extracted from a Jaynes-Cummings Hamiltonian approach. The two rates are found to be similar emphasizing that charge noise is the main source of dephasing in our system.

Basset, J.; Stockklauser, A.; Jarausch, D.-D.; Frey, T.; Reichl, C.; Wegscheider, W.; Wallraff, A.; Ensslin, K.; Ihn, T. [Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich (Switzerland)

2014-08-11T23:59:59.000Z

157

Theoretical simulation of carrier capture and relaxation rates in quantum-dot semiconductor optical amplifiers  

SciTech Connect (OSTI)

Based on Auger scattering mechanism, carrier-carrier scattering dynamics between the two-dimensional carrier reservoir (also called wetting layer, i.e., WL) and the confined quantum dot ground and first excited state in quantum-dot semiconductor optical amplifiers (QD-SOAs) are investigated theoretically in this paper. The scattering rates for independent electron and hole densities are calculated. The results show an ultra-fast carrier capture (relaxation) rate up to 1 ps{sup ?1}, and there is a complex dependence of the Coulomb scattering rates on the WL electron and hole densities. In addition, due to the different effective mass and the level distribution, the scattering rates for electron and hole are very different. Finally, in order to provide a direction to control (increase or decrease) the input current in realistic QD-SOA systems, a simple method is proposed to determine the trends of the carrier recovery rates with the WL carrier densities in the vicinity of the steady-state.

Wu, Yunhu [College of Physical Science and Technology, Central China Normal University, Wuhan 430079 (China); Department of Physics, Kashi Normal College, Kashi 844006 (China); Zhang, Guoping, E-mail: gpzhang@phy.ccnu.edu.cn [College of Physical Science and Technology, Central China Normal University, Wuhan 430079 (China); Guo, Ling; Qi, Guoqun [Department of Physics, Kashi Normal College, Kashi 844006 (China); Li, Xiaoming [Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)

2014-06-14T23:59:59.000Z

158

Electrically driven single photon emission from a CdSe/ZnSSe single quantum dot at 200?K  

SciTech Connect (OSTI)

High temperature operation of an electrically driven single photon emitter based on a single epitaxial quantum dot is reported. CdSe/ZnSSe/MgS quantum dots are embedded into a p-i-n diode architecture providing almost background free excitonic and biexcitonic electroluminescence from individual quantum dots through apertures in the top contacts. Clear antibunching with g{sup 2}(??=?0)?=?0.28?±?0.20 can be tracked up to T?=?200?K, representing the highest temperature for electrically triggered single photon emission from a single quantum dot device.

Quitsch, Wolf; Kümmell, Tilmar; Bacher, Gerd [Werkstoffe der Elektrotechnik and CENIDE, Universität Duisburg-Essen, Bismarckstraße 81, 47057 Duisburg (Germany); Gust, Arne; Kruse, Carsten; Hommel, Detlef [Institut für Festkörperphysik, Universität Bremen, Otto-Hahn-Allee 1, 28334 Bremen (Germany)

2014-09-01T23:59:59.000Z

159

Effect of shells on photoluminescence of aqueous CdTe quantum dots  

SciTech Connect (OSTI)

Graphical abstract: Size-tunable CdTe coated with several shells using an aqueous solution synthesis. CdTe/CdS/ZnS quantum dots exhibited high PL efficiency up to 80% which implies the promising applications for biomedical labeling. - Highlights: • CdTe quantum dots were fabricated using an aqueous synthesis. • CdS, ZnS, and CdS/ZnS shells were subsequently deposited on CdTe cores. • Outer ZnS shells provide an efficient confinement of electron and hole inside the QDs. • Inside CdS shells can reduce the strain on the QDs. • Aqueous CdTe/CdS/ZnS QDs exhibited high stability and photoluminescence efficiency of 80%. - Abstract: CdTe cores with various sizes were fabricated in aqueous solutions. Inorganic shells including CdS, ZnS, and CdS/ZnS were subsequently deposited on the cores through a similar aqueous procedure to investigate the effect of shells on the photoluminescence properties of the cores. In the case of CdTe/CdS/ZnS quantum dots, the outer ZnS shell provides an efficient confinement of electron and hole wavefunctions inside the quantum dots, while the middle CdS shell sandwiched between the CdTe core and ZnS shell can be introduced to obviously reduce the strain on the quantum dots because the lattice parameters of CdS is situated at the intermediate-level between those of CdTe and ZnS. In comparison with CdTe/ZnS core–shell quantum dots, the as-prepared water-soluble CdTe/CdS/ZnS quantum dots in our case can exhibit high photochemical stability and photoluminescence efficiency up to 80% in an aqueous solution, which implies the promising applications in the field of biomedical labeling.

Yuan, Zhimin; Yang, Ping, E-mail: mse_yangp@ujn.edu.cn

2013-07-15T23:59:59.000Z

160

FEW ELECTRON QUANTUM DOTS IN InAs/InP CORE SHELL NANOWIRES  

E-Print Network [OSTI]

..." Much effort is being directed at harnessing the potential power of quantum com- puting [7]. At the turn electric field (EDSR) is expected to be orders of magnitudes faster. To this effect, InAs nanowires with a thin shell of InP, are explored as a system where a quantum dot can be defined and probed electrically

Nygård, Jesper

Note: This page contains sample records for the topic "determination quantum dot" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Lead-position dependent regular oscillations and random fluctuations of conductance in graphene quantum dots  

E-Print Network [OSTI]

Lead-position dependent regular oscillations and random fluctuations of conductance in graphene.1088/0953-8984/25/8/085502 Lead-position dependent regular oscillations and random fluctuations of conductance in graphene quantum, for graphene quantum dots, the conductance variations with the lead positions. Since for graphene the types

Lai, Ying-Cheng

162

Observation of the Kondo effect in a spin-3/2 hole quantum dot  

SciTech Connect (OSTI)

We report the observation of the Kondo effect in a spin-3/2 hole quantum dot formed near pinch-off in a GaAs quantum wire. We clearly observe two distinctive hallmarks of quantum dot Kondo physics. First, the zero-bias peak in the differential conductance splits an in-plane magnetic field and the splitting is independent of gate voltage. Second, the splitting rate is twice as large as that for the lowest one-dimensional subband. We show that the Zeeman splitting of the zero-bias peak is highly anisotropic and attribute this to the strong spin-orbit interaction for holes in GaAs.

Klochan, O.; Micolich, A. P.; Hamilton, A. R. [School of Physics, University of New South Wales, Sydney NSW 2052 (Australia); Trunov, K.; Reuter, D.; Wieck, A. D. [Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum (Germany)

2013-12-04T23:59:59.000Z

163

Fast Electrical Control of a Quantum Dot Strongly Coupled to a Nano-resonator  

E-Print Network [OSTI]

The resonance frequency of an InAs quantum dot strongly coupled to a GaAs photonic crystal cavity was electrically controlled via quantum confined Stark effect. Stark shifts up to 0.3meV were achieved using a lateral Schottky electrode that created a local depletion region at the location of the quantum dot. We report switching of a probe laser coherently coupled to the cavity up to speeds as high as 150MHz, limited by the RC constant of the transmission line. The coupling rate and the magnitude of the Stark shift with electric field were investigated while coherently probing the system.

Andrei Faraon; Arka Majumdar; Hyochul Kim; Pierre Petroff; Jelena Vuckovic

2009-06-03T23:59:59.000Z

164

Negative differential gain in quantum dot systems: Interplay of structural properties and many-body effects  

SciTech Connect (OSTI)

The saturation behaviour of optical gain with increasing excitation density is an important factor for laser device performance. For active materials based on self-organized InGaAs/GaAs quantum dots, we study the interplay between structural properties of the quantum dots and many-body effects of excited carriers in the optical properties via a combination of tight-binding and quantum-kinetic calculations. We identify regimes where either phase-space filling or excitation-induced dephasing dominates the saturation behavior of the optical gain. The latter can lead to the emergence of a negative differential material gain.

Goldmann, E., E-mail: goldmann@itp.uni-bremen.de; Jahnke, F. [Institute for Theoretical Physics, University of Bremen, Bremen 28359 (Germany); Lorke, M.; Frauenheim, T. [Bremen Center for Computational Materials Science BCCMS, University of Bremen, Bremen 28359 (Germany)

2014-06-16T23:59:59.000Z

165

Sub-microsecond correlations in photoluminescence from InAs quantum dots  

E-Print Network [OSTI]

Photon correlation measurements reveal memory effects in the optical emission of single InAs quantum dots with timescales from 10 to 800 ns. With above-band optical excitation, a long-timescale negative correlation (antibunching) is observed, while with quasi-resonant excitation, a positive correlation (blinking) is observed. A simple model based on long-lived charged states is presented that approximately explains the observed behavior, providing insight into the excitation process. Such memory effects can limit the internal efficiency of light emitters based on single quantum dots, and could also be problematic for proposed quantum-computation schemes.

Charles Santori; David Fattal; Jelena Vuckovic; Glenn S. Solomon; Edo Waks; Yoshihisa Yamamoto

2003-08-16T23:59:59.000Z

166

Nuclear Spin Dynamics in Double Quantum Dots: Multi-Stability, Dynamical Polarization, Criticality and Entanglement  

E-Print Network [OSTI]

We theoretically study the nuclear spin dynamics driven by electron transport and hyperfine interaction in an electrically-defined double quantum dot (DQD) in the Pauli-blockade regime. We derive a master-equation-based framework and show that the coupled electron-nuclear system displays an instability towards the buildup of large nuclear spin polarization gradients in the two quantum dots. In the presence of such inhomogeneous magnetic fields, a quantum interference effect in the collective hyperfine coupling results in sizable nuclear spin entanglement between the two quantum dots in the steady state of the evolution. We investigate this effect using analytical and numerical techniques, and demonstrate its robustness under various types of imperfections.

Martin J. A. Schuetz; Eric M. Kessler; Lieven M. K. Vandersypen; J. Ignacio Cirac; Geza Giedke

2014-05-30T23:59:59.000Z

167

Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots  

SciTech Connect (OSTI)

We report strong heavy hole-light hole mixing in GaAs quantum dots grown by droplet epitaxy. Using the neutral and charged exciton emission as a monitor we observe the direct consequence of quantum dot symmetry reduction in this strain free system. By fitting the polar diagram of the emission with simple analytical expressions obtained from k{center_dot}p theory we are able to extract the mixing that arises from the heavy-light hole coupling due to the geometrical asymmetry of the quantum dot.

Belhadj, T.; Amand, T.; Kunz, S.; Marie, X.; Urbaszek, B. [INSA-CNRS-UPS, LPCNO, Universite de Toulouse, 135 Av. Rangueil, 31077 Toulouse (France); Kunold, A. [INSA-CNRS-UPS, LPCNO, Universite de Toulouse, 135 Av. Rangueil, 31077 Toulouse (France); Departamento de Ciencias Basicas, UAM-A, Col. Reynosa Tamaulipas, 02200 Mexico D.F. (Mexico); Simon, C.-M. [INSA-CNRS-UPS, LPCNO, Universite de Toulouse, 135 Av. Rangueil, 31077 Toulouse (France); CNRS-UPS, LCAR, IRSAMC, Universite de Toulouse, 31062 Toulouse (France); Kuroda, T.; Abbarchi, M.; Mano, T.; Sakoda, K. [National Institute for Material Science, Namiki 1-1, Tsukuba 305-0044 (Japan)

2010-08-02T23:59:59.000Z

168

Process-Dependent Properties in Colloidally Synthesized “Giant” Core/Shell Nanocrystal Quantum Dots  

SciTech Connect (OSTI)

Due to their characteristic bright and stable photoluminescence, semiconductor nanocrystal quantum dots (NQDs) have attracted much interest as efficient light emitters for applications from single-particle tracking to solid-state lighting. Despite their numerous enabling traits, however, NQD optical properties are frustratingly sensitive to their chemical environment, exhibit fluorescence intermittency ('blinking'), and are susceptible to Auger recombination, an efficient nonradiative decay process. Previously, we showed for the first time that colloidal CdSe/CdS core/shell nanocrystal quantum dots (NQDs) comprising ultrathick shells (number of shell monolayers, n, > 10) grown by protracted successive ionic layer adsorption and reaction (SILAR) leads to remarkable photostability and significantly suppressed blinking behavior as a function of increasing shell thickness. We have also shown that these so-called 'giant' NQDs (g-NQDs) afford nearly complete suppression of non-radiative Auger recombination, revealed in our studies as long biexciton lifetimes and efficient multiexciton emission. The unique behavior of this core/shell system prompted us to assess correlations between specific physicochemical properties - beyond shell thickness - and functionality. Here, we demonstrate the ability of particle shape/faceting, crystalline phase, and core size to determine ensemble and single-particle optical properties (quantum yield/brightness, blinking, radiative lifetimes). Significantly, we show how reaction process parameters (surface-stabilizing ligands, ligand:NQD ratio, choice of 'inert' solvent, and modifications to the SILAR method itself) can be tuned to modify these function-dictating NQD physical properties, ultimately leading to an optimized synthetic approach that results in the complete suppression of blinking. We find that the resulting 'guiding principles' can be applied to other NQD compositions, allowing us to achieve non-blinking behavior in the near-infrared. Lastly, in addition to realizing novel light-emission properties by refining nanoscale architectures at the single-NQD level, we also investigate collective properties by assembling our core/shell NQDs into larger scale arrays.

Hollingsworth, Jennifer A. [Los Alamos National Laboratory; Ghosh, Yagnaseni [Los Alamos National Laboratory; Dennis, Allison M. [Los Alamos National Laboratory; Mangum, Benjamin D. [Los Alamos National Laboratory; Park, Young-Shin [Los Alamos National Laboratory; Kundu, Janardan [Los Alamos National Laboratory; Htoon, Han [Los Alamos National Laboratory

2012-06-07T23:59:59.000Z

169

Using quantum dots to tag subsurface damage in lapped and polished glass samples  

SciTech Connect (OSTI)

Grinding, lapping, and polishing are finishing processes used to achieve critical surface parameters in a variety of precision optical and electronic components. As these processes remove material from the surface through mechanical and chemical interactions, they may induce a damaged layer of cracks, voids, and stressed material below the surface. This subsurface damage (SSD) can degrade the performance of a final product by creating optical aberrations due to diffraction, premature failure in oscillating components, and a reduction in the laser induced damage threshold of high energy optics. As these defects lie beneath the surface, they are difficult to detect, and while many methods are available to detect SSD, they can have notable limitations regarding sample size and type, preparation time, or can be destructive in nature. The authors tested a nondestructive method for assessing SSD that consisted of tagging the abrasive slurries used in lapping and polishing with quantum dots (nano-sized fluorescent particles). Subsequent detection of fluorescence on the processed surface is hypothesized to indicate SSD. Quantum dots that were introduced to glass surfaces during the lapping process were retained through subsequent polishing and cleaning processes. The quantum dots were successfully imaged by both wide field and confocal fluorescence microscopy techniques. The detected fluorescence highlighted features that were not observable with optical or interferometric microscopy. Atomic force microscopy and additional confocal microscope analysis indicate that the dots are firmly embedded in the surface but do not appear to travel deep into fractures beneath the surface. Etching of the samples exhibiting fluorescence confirmed that SSD existed. SSD-free samples exposed to quantum dots did not retain the dots in their surfaces, even when polished in the presence of quantum dots.

Williams, Wesley B.; Mullany, Brigid A.; Parker, Wesley C.; Moyer, Patrick J.; Randles, Mark H.

2009-09-20T23:59:59.000Z

170

Absorption spectra of CdSe-ZnS core-shell quantum dots at high photon energies : experiment and modeling  

E-Print Network [OSTI]

Absorption spectra of CdSe-ZnS core-shell quantum dots at high photon energies : experiment spectra of CdSe-ZnS core-shell quantum dot (QD) ensembles, with average core diameters ranging from 2.6 nm. In agreement with previous reports, the absorption coefficient at energies 1 eV above the effective bandgap

Ghosh, Sandip

171

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics  

E-Print Network [OSTI]

injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

Klotzkin, David

172

Femtosecond gain and index dynamics in an InAs/InGaAsP quantum dot amplifier  

E-Print Network [OSTI]

Femtosecond gain and index dynamics in an InAs/InGaAsP quantum dot amplifier operating at 1.55 µm and refractive index dynamics of an InAs/InGaAsP self-assembled quantum dot semiconductor optical amplifier (SOA-carrier absorption and stimulated transition processes. ©2006 Optical Society of America OCIS codes: (320

Mojahedi, Mohammad

173

Microsphere Light-Scattering Layer Assembled by ZnO Nanosheets for the Construction of High Efficiency (>5%) Quantum Dots  

E-Print Network [OSTI]

performance solar cells for sustainable energy sources to replace fossil fuels has become an urgent subject for CdS/CdSe quantum dot cosensitized solar cells (QDSCs) with a power conversion efficiency (PCE Efficiency (>5%) Quantum Dots Sensitized Solar Cells Jianjun Tian,*, Lili Lv, Xuyang Wang, Chengbin Fei

Cao, Guozhong

174

Quantum Transduction of Telecommunications-band Single Photons from a Quantum Dot by Frequency Upconversion  

E-Print Network [OSTI]

The ability to transduce non-classical states of light from one wavelength to another is a requirement for integrating disparate quantum systems that take advantage of telecommunications-band photons for optical fiber transmission of quantum information and near-visible, stationary systems for manipulation and storage. In addition, transducing a single-photon source at 1.3 {\\mu}m to visible wavelengths for detection would be integral to linear optical quantum computation due to the challenges of detection in the near-infrared. Recently, transduction at single-photon power levels has been accomplished through frequency upconversion, but it has yet to be demonstrated for a true single-photon source. Here, we transduce the triggered single-photon emission of a semiconductor quantum dot at 1.3 {\\mu}m to 710 nm with a total detection (internal conversion) efficiency of 21% (75%). We demonstrate that the 710 nm signal maintains the quantum character of the 1.3 {\\mu}m signal, yielding a photon anti-bunched second-order intensity correlation, g^(2)(t), that shows the optical field is composed of single photons with g^(2)(0) = 0.165 < 0.5.

Matthew T. Rakher; Lijun Ma; Oliver Slattery; Xiao Tang; Kartik Srinivasan

2011-08-19T23:59:59.000Z

175

Showcasing the research of quantum dot sensitized solar cells from Prof. J.J.Tian's and Prof. G.Z.Cao's lab,  

E-Print Network [OSTI]

. Introduction Quantum dot sensitized solar cells (QDSCs) can be regarded as a derivative of dye-sensitized solarShowcasing the research of quantum dot sensitized solar cells from Prof. J.J.Tian's and Prof. G cells A hierarchical structure of ZnO/TiO2 nanocable photoanode for quantum dot sensitized solar cells

Cao, Guozhong

176

Near-infrared peptide-coated quantum dots for small animal imaging Gopal Iyer, Jack J. Li, Fabien Pinaud, James M. Tsay, Laurent A. Bentolila, Xavier  

E-Print Network [OSTI]

Near-infrared peptide-coated quantum dots for small animal imaging Gopal Iyer, Jack J. Li, Fabien ABSTRACT We have synthesized high quality type-II CdTe/CdSe near infrared quantum dots using successive ion used a peptide coating technique on type-II and commercial near infrared quantum dots for delivery

Michalet, Xavier

177

Photoinduced band filling in strongly confined colloidal PbS quantum dots  

SciTech Connect (OSTI)

Increase in continuous wave laser excitation (6?W/cm{sup 2} to 120?W/cm{sup 2}) of colloidal PbS quantum dots in the strongly quantized regime (diameters 2.0?nm and 4.7?nm) deposited on semi-insulating GaAs and glass causes a clear blue shift (0.019?eV and 0.080?eV) of the emission spectra. Proof of the applicability of a dynamic three-dimensional band filling model is the significance of the presented results and demonstrates the effective electronic coupling in quantum dot arrays similar to superlattices. The work also reveals the influence of quantum dot sizes on photo-doping effects.

Ullrich, B., E-mail: bruno@fis.unam.mx [Instituto de Ciencias Físicas, Universidad Nacional Autónoma de México, Cuernavaca, Morelos 62210 (Mexico); Ullrich Photonics LLC, Wayne, Ohio 43466 (United States); Xi, H. [Department of Physics and Astronomy, Bowling Green State University, Bowling Green, Ohio 43403-0209 (United States); Wang, J. S. [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright Patterson AFB, Ohio 45433-7707 (United States)

2014-06-21T23:59:59.000Z

178

Design of quantum dot lattices in amorphous matrices by ion beam irradiation  

SciTech Connect (OSTI)

We report on the highly controllable self-assembly of semiconductor quantum dots and metallic nanoparticles in a solid amorphous matrix, induced by ion beam irradiation of an amorphous multilayer. We demonstrate experimentally and theoretically a possibility to tune the basic structural properties of the quantum dots in a wide range. Furthermore, the sizes, distances, and arrangement type of the quantum dots follow simple equations dependent on the irradiation and the multilayer properties. We present a Monte Carlo model for the simulation and prediction of the structural properties of the materials formed by this method. The presented results enable engineering and simple production of functional materials or simple devices interesting for applications in nanotechnology.

Buljan, M.; Bogdanovic-Radovic, I.; Karlusic, M.; Desnica, U. V.; Radic, N.; Jaksic, M.; Salamon, K.; Drazic, G.; Bernstorff, S.; Holy, V. [Rudjer Boskovic Institute, Bijenicka cesta 54, HR-10000 Zagreb (Croatia); Institute of Physics, Bijenicka cesta 46, HR-10000 Zagreb (Croatia); Jozef Stefan Institute, Jamova 39, SLO-1000 Ljubljana (Slovenia); Sincrotrone Trieste, I-34149 Basovizza (Italy); Charles University in Prague, CZ-12116 Prague (Czech Republic)

2011-10-15T23:59:59.000Z

179

The impact of disorder on charge transport in three dimensional quantum dot resonant tunneling structures  

SciTech Connect (OSTI)

Efficient iso-entropic energy filtering of electronic waves can be realized through nanostructures with three dimensional confinement, such as quantum dot resonant tunneling structures. Large-area deployment of such structures is useful for energy selective contacts but such configuration is susceptible to structural disorders. In this work, the transport properties of quantum-dot-based wide-area resonant tunneling structures, subject to realistic disorder mechanisms, are studied. Positional variations of the quantum dots are shown to reduce the resonant transmission peaks while size variations in the device are shown to reduce as well as broaden the peaks. Increased quantum dot size distribution also results in a peak shift to lower energy which is attributed to large dots dominating transmission. A decrease in barrier thickness reduces the relative peak height while the overall transmission increases dramatically due to lower “series resistance.” While any shift away from ideality can be intuitively expected to reduce the resonance peak, quantification allows better understanding of the tolerances required for fabricating structures based on resonant tunneling phenomena/.

Puthen-Veettil, B., E-mail: b.puthen-veettil@unsw.edu.au; Patterson, R.; König, D.; Conibeer, G.; Green, M. A. [Australian Centre for Advanced Photovoltaics, UNSW, Sydney 2052 (Australia)

2014-10-28T23:59:59.000Z

180

Growth and optical characterization of multilayers of InGaN quantum dots  

E-Print Network [OSTI]

carried out using a two photon excitation technique employing a picosecond mode-locked Ti-sapphire laser emitting at 790 nm. Samples were mounted in a cold -finger cryostat that could be cooled down to 4.2 K and the laser was focused through a microscope... GaN quantum dots Article Type: Research Paper Section/Category: General subjects Keywords: B2. InGaN quantum dots; A1. Photoluminescence; B1. Nitrides; A3. Metal-organic vapour phase epitaxy Corresponding Author: Dr Tongtong Zhu, Ph...

Zhu, Tontong; El-Ella, Haitham; Reid, Benjamin; Holmes, Mark; Taylor, Robert; Kappers, Menno; Oliver, Rachel

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "determination quantum dot" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots  

SciTech Connect (OSTI)

In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074, Würzburg (Germany); Igusa, R.; Iwamoto, S.; Arakawa, Y. [University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2014-09-15T23:59:59.000Z

182

An Efficient Source of Single Photons: A Single Quantum Dot in a Micropost Microcavity  

E-Print Network [OSTI]

We have demonstrated efficient production of triggered single photons by coupling a single semiconductor quantum dot to a three-dimensionally confined optical mode in a micropost microcavity. The efficiency of emitting single photons into a single-mode travelling wave is approximately 38%, which is nearly two orders of magnitude higher than for a quantum dot in bulk semiconductor material. At the same time, the probability of having more than one photon in a given pulse is reduced by a factor of seven as compared to light with Poissonian photon statistics.

Matthew Pelton; Charles Santori; Jelena Vuckovic; Bingyang Zhang; Glenn S. Solomon; Jocelyn Plant; Yoshihisa Yamamoto

2002-08-08T23:59:59.000Z

183

Graphene quantum dots for valley-based quantum computing: A feasibility study  

E-Print Network [OSTI]

At the center of quantum computing1 realization is the physical implementation of qubits - two-state quantum information units. The rise of graphene2 has opened a new door to the implementation. Because graphene electrons simulate two-dimensional relativistic particles with two degenerate and independent energy valleys,3 a novel degree of freedom (d.o.f.), namely, the valley state of an electron, emerges as a new information carrier.4 Here, we expand the Loss-DiVincenzo quantum dot (QD) approach in electron spin qubits,5,6 and investigate the feasibility of double QD (DQD) structures in gapful graphene as "valley qubits", with the logic 0 / 1 states represented by the "valley" singlet / triplet pair. This generalization is characterized by 1) valley relaxation time ~ O(ms), and 2) electric qubit manipulation on the time scale ~ ns, based on the 1st-order "relativistic effect" unique in graphene. A potential for valley-based quantum computing is present.

G. Y. Wu; N. -Y. Lue; L. Chang

2011-04-21T23:59:59.000Z

184

Quasiresonant Excitation of InP/InGaP Quantum Dots Using Second Harmonic Generated in a Photonic Crystal Cavity  

E-Print Network [OSTI]

Indistinguishable single photons are necessary for quantum information processing applications. Resonant or quasiresonant excitation of single quantum dots provides greater single photon indistinguishability than incoherent pumping, but is also more challenging experimentally. Here, we demonstrate high signal to noise quasiresonant excitation of InP/InGaP quantum dots. The excitation is provided via second harmonic generated from a telecommunications wavelength laser resonant with the fundamental mode of a photonic crystal cavity, fabricated at twice the quantum dot transition wavelength. The second harmonic is generated using the \\chi(2) nonlinearity of the InGaP material matrix.

Sonia Buckley; Kelley Rivoire; Fariba Hatami; Jelena Vuckovic

2012-10-03T23:59:59.000Z

185

X-ray luminescence of CdTe quantum dots in LaF{sub 3}:Ce/CdTe nanocomposites  

SciTech Connect (OSTI)

CdTe quantum dots have intense photoluminescence but exhibit almost no x-ray luminescence. However, intense x-ray luminescence from CdTe quantum dots is observed in LaF{sub 3}:Ce/CdTe nanocomposites. This enhancement in the x-ray luminescence of CdTe quantum dots is attributed to the energy transfer from LaF{sub 3}:Ce to CdTe quantum dots in the nanocomposites. The combination of LaF{sub 3}:Ce nanoparticles and CdTe quantum dots makes LaF{sub 3}:Ce/CdTe nanocomposites promising scintillators for radiation detection.

Hossu, Marius; Liu Zhongxin; Yao Mingzhen; Ma Lun; Chen Wei

2012-01-02T23:59:59.000Z

186

Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities  

E-Print Network [OSTI]

We demonstrate room temperature visible wavelength photoluminescence from In0.5Ga0.5As quantum dots embedded in a GaP membrane. Time-resolved above band photoluminescence measurements of quantum dot emission show a biexpontential decay with lifetimes of ~200 ps. We fabricate photonic crystal cavities which provide enhanced outcoupling of quantum dot emission, allowing the observation of narrow lines indicative of single quantum dot emission. This materials system is compatible with monolithic integration on Si, and is promising for high efficiency detection of single quantum dot emission as well as optoelectronic devices emitting at visible wavelengths.

Kelley Rivoire; Sonia Buckley; Yuncheng Song; Minjoo Larry Lee; Jelena Vuckovic

2012-01-05T23:59:59.000Z

187

Nanoscale optical positioning of single quantum dots for bright, pure, and on-demand single-photon emission  

E-Print Network [OSTI]

Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth results in an essentially random in-plane spatial distribution of quantum dots, presenting a challenge in creating devices that exploit the strong interaction of single quantum dots with highly confined optical modes. Here, we present a photoluminescence imaging approach for locating single quantum dots with respect to alignment features with an average (minimum) position uncertainty efficiency (48 % +/- 5 % into a 0.4 numerical aperture lens, close to the theoretically predicted value of 50 %), low multiphoton prob...

Sapienza, Luca; Badolato, Antonio; Srinivasan, Kartik

2015-01-01T23:59:59.000Z

188

Excitonic enhancement of nonradiative energy transfer from a quantum well in the optical near field of energy gradient quantum dots  

E-Print Network [OSTI]

. Phys. 111, 113714 (2012) Transport of indirect excitons in a potential energy gradient Appl. Phys. Lett 30 April 2012; published online 13 June 2012) We report strong exciton migration with an efficiency (QWs) to colloidal nanocrystal quantum dots (NQDs) is criti- cal to the energy efficiency in hybrid

Demir, Hilmi Volkan

189

Intermediate-band solar cells based on quantum dot supracrystals Q. Shao and A. A. Balandina  

E-Print Network [OSTI]

parameter in the photovoltaic PV solar cell technology. It is defined as = FFVocJsc Pin , 1 where FFIntermediate-band solar cells based on quantum dot supracrystals Q. Shao and A. A. Balandina Nano to implement the intermediate-band solar cell with the efficiency exceeding the Shockley-Queisser limit

190

Depleted-heterojunction colloidal quantum dot photovoltaics employing low-cost electrical contacts  

E-Print Network [OSTI]

Department of Materials Science and Engineering, 184 College Street, Toronto, Ontario M5S 3E4, Canada 3 of depleted-heterojunction colloidal quantum dot solar cells, we describe herein a strategy that replaces. © 2010 American Institute of Physics. doi:10.1063/1.3463037 Solar energy harvesting requires

191

Electrical and Thermal Conductivity of Ge/Si Quantum Dot Superlattices  

E-Print Network [OSTI]

. Good carrier mobility and electric con- ductivity are important for thermoelectric materials where-Riverside, Riverside, California 92521, USA Recently proposed thermoelectric applications of quantum dot superlattices made of different material systems depend crucially on the values of the electrical and thermal

192

Hierarchically Structured ZnO Nanorods-Nanosheets for Improved Quantum-Dot-Sensitized Solar Cells  

E-Print Network [OSTI]

). This hierarchical structure had two advantages in improving the power conversion efficiency (PCE) of the solar cells. INTRODUCTION The establishment of low-cost and high-performance solar cells for sustainable energy sourcesHierarchically Structured ZnO Nanorods-Nanosheets for Improved Quantum-Dot-Sensitized Solar Cells

Cao, Guozhong

193

Prospective Article Materials processing strategies for colloidal quantum dot solar cells  

E-Print Network [OSTI]

energy sources, particularly with cheap and plentiful natural gas, solar photovoltaic systems must cost of the solar panels themselves. Third-generation photovoltaic systems, including organic, dye-sensitized, and colloidal quantum dot (CQD) solar cells, offer a path to low-weight, low-cost, and prospectively high

194

Effect of the (OH) Surface Capping on ZnO Quantum Dots  

E-Print Network [OSTI]

in air at different temperatures from 150­500 C for 30 min. In comparison, highly purified bulk Zn is related to oxygen deficiency [1]; the other is a much narrower ultraviolet (UV) emission band at around, compared with good quality ZnO single crystals or ZnO powders, the UV bandgap luminescence in quantum dots

Nabben, Reinhard

195

A Study Of Semiconductor Quantum Dots In The Application To Terahertz Sensors  

E-Print Network [OSTI]

A Study Of Semiconductor Quantum Dots In The Application To Terahertz Sensors Raymond Davis M and referenced as part of background information used in this project. Raymond Davis October 1, 2011 ii #12 sensors. For detection of terahertz radia- tion we probe charge excitations of QDs caused

Sheldon, Nathan D.

196

Wave-Function Mapping of Graphene Quantum Dots with Soft Confinement D. Subramaniam,1  

E-Print Network [OSTI]

Wave-Function Mapping of Graphene Quantum Dots with Soft Confinement D. Subramaniam,1 F. Libisch,2) Using low-temperature scanning tunneling spectroscopy, we map the local density of states of graphene the graphene K point, the electronic properties of the QDs are dominantly graphenelike. Indeed, we compare

Florian, Libisch

197

Eigenvalues imbedded in the band spectrum for the periodic array of quantum dots  

E-Print Network [OSTI]

) Department of Higher Mathematics, Institute of Fine Mechanics and Optics, Sablinskaya 14, St. II. Model We consider an array of quantum dots displaced in the nodes of a plane lattice \\Gamma which is invariant with respect to translations by vectors of a Bravais lattice \\Lambda. We assume that 0 2 \\Gamma

198

Self-assembly of triangular quantum dots on (111)A substrates by droplet epitaxy  

SciTech Connect (OSTI)

We report the self-assembly of triangular GaAs quantum dots (QDs) on (111)A substrates using droplet epitaxy. Shape transition from hexagonal to triangular QDs is observed with increasing crystallizing temperature. The mechanism of the morphological change is discussed in terms of different growth rates of step edges on a (111)A substrate.

Jo, M.; Mano, T.; Abbarchi, M.; Kuroda, T. [Advanced Photonics Materials Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sakoda, K. [Advanced Photonics Materials Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

199

Intersubband absorption in boron-doped multiple Ge quantum dots J. L. Liu,a)  

E-Print Network [OSTI]

Intersubband absorption in boron-doped multiple Ge quantum dots J. L. Liu,a) W. G. Wu, A. Balandin; accepted for publication 3 November 1998 The intersubband absorption in self-assembled boron-doped multiple and undoped Si barriers. The infrared absorption as a function of wavelength is measured by Fourier transform

200

Tuning the optical properties of dilute nitride site controlled quantum dots  

SciTech Connect (OSTI)

We show that deterministic control of the properties of pyramidal site-controlled quantum dots (QD) could be achieved by exposing the QD layer to nitrogen precursor unsymmetrical dimethylhydrazine (UDMHy). The properties that could be tuned include an expected emission reduction in dilute nitride materials, excitonic pattern (biexciton binding energy) and improved carrier confinement potential symmetry (reduced fine-structure splitting)

Juska, G.; Dimastrodonato, V.; Mereni, L. O.; Gocalinska, A.; Pelucchi, E. [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland)

2013-12-04T23:59:59.000Z

Note: This page contains sample records for the topic "determination quantum dot" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Fine Structure of Highly Charged Excitons in Semiconductor Quantum Dots B. Urbaszek,1  

E-Print Network [OSTI]

quantum dots (QDs) are artificial atoms whose properties can be individually measured in their solid, the degeneracy of the excitonic ground state is lifted by the electron-hole (EH) exchange interaction, resultingV, they can be much larger in semiconductor nanocrystals [3] or polymers [4]. In all these systems

Ludwig-Maximilians-Universität, München

202

Photovoltaic nanopillar radial junction diode architecture enhanced by integrating semiconductor quantum dot nanocrystals as light harvesters  

E-Print Network [OSTI]

Photovoltaic nanopillar radial junction diode architecture enhanced by integrating semiconductor hybridized, radial p-n junction based, nanopillar solar cells with photovoltaic performance enhanced. By furnishing Si based nanopillar photovoltaic diodes with CdSe quantum dots, we experimentally showed up

Demir, Hilmi Volkan

203

Cu2ZnSnS4 nanocrystals and graphene quantum dots for photovoltaics Xukai Xinab  

E-Print Network [OSTI]

Cu2ZnSnS4 nanocrystals and graphene quantum dots for photovoltaics Jun Wang,a Xukai Xinab advances in the synthesis and utilization of CZTS nanocrystals and colloidal GQDs for photovoltaics emerged to achieve low cost, high perfor- mance photovoltaics, including organic solar cells,2­6 dye

Lin, Zhiqun

204

Study of the self-organization processes in lead sulfide quantum dots  

SciTech Connect (OSTI)

A procedure is described for the synthesis of nanoparticles based on lead chalcogenides. The procedure combines the synthesis of colloidal quantum dots (QDs) in aqueous solutions with simultaneous organization of the QDs into ordered arrays. The processes of the self-organization of QDs are analyzed at the nano- and microscopic levels by the photoluminescence method, atomic-force microscopy, and optical microscopy.

Tarasov, S. A., E-mail: SATarasov@mail.ru; Aleksandrova, O. A.; Maksimov, A. I.; Maraeva, E. V.; Matyushkin, L. B.; Men’kovich, E. A.; Moshnikov, V. A. [St. Petersburg Electrotechnical University LETI (Russian Federation); Musikhin, S. F. [St. Petersburg State Polytechnic University (Russian Federation)

2014-12-15T23:59:59.000Z

205

Coupling an electron spin in a semiconductor quantum dot to an optical nano-cavity  

E-Print Network [OSTI]

We propose a scheme to efficiently couple a single quantum dot electron spin to an optical nano-cavity, which enables us to simultaneously benefit from a cavity as an efficient photonic interface, as well as to perform high fidelity (nearly 100%) spin initialization and manipulation achievable in bulk semiconductors. Moreover, the presence of the cavity speeds up the spin initialization process beyond GHz.

Arka Majumdar; Per Kaer; Michal Bajcsy; Erik D. Kim; Konstantinos G. Lagoudakis; Armand Rundquist; Jelena Vuckovic

2013-04-07T23:59:59.000Z

206

Synthesis and optical properties of cadmium selenide quantum dots for white light-emitting diode application  

SciTech Connect (OSTI)

Highlights: ? Stable CdSe QDs were synthesized by the one-step and two-level process respectively. ? The fabricated white LEDs show good white balance. ? CdSe QDs present well green to yellow band luminescence. ? CdSe QDs displayed a broad excitation band. - Abstract: Yellow light-emitting cadmium selenide quantum dots were synthesized using one-step and two-step methods in an aqueous medium. The structural luminescent properties of these quantum dots were investigated. The obtained cadmium selenide quantum dots displayed a broad excitation band suitable for blue or near-ultraviolet light-emitting diode applications. White light-emitting diodes were fabricated by coating the cadmium selenide samples onto a 460 nm-emitting indium gallium nitrite chip. Both samples exhibited good white balance. Under a 20 mA working current, the white light-emitting diode fabricated via the one-step and two-step methods showed Commission Internationale de l’Éclairage coordinates at (0.27, 0.23) and (0.27, 0.33), respectively, and a color rendering index equal to 41 and 37, respectively. The one-step approach was simpler, greener, and more effective than the two-step approach. The one-step approach can be enhanced by combining cadmium selenide quantum dots with proper phosphors.

Xu, Xianmei; Wang, Yilin; Gule, Teri; Luo, Qiang [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Zhou, Liya, E-mail: zhouliyatf@163.com [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Gong, Fuzhong [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China)

2013-03-15T23:59:59.000Z

207

PHYSICAL REVIEW B 85, 085117 (2012) Spin thermopower in interacting quantum dots  

E-Print Network [OSTI]

current without accompanying charge current. For temperatures and fields at or above the Kondo temperature, we relate the spin-Seebeck coefficient to the charge-Seebeck coefficient of a negative-U quantum dot applications, including power generation, refrigeration, and temperature measurement.1 Thermoelectric phenomena

Ramsak, Anton

208

Electronic and optical properties of single excitons and biexcitons in type-II quantum dot nanocrystals  

SciTech Connect (OSTI)

In this study, a detailed investigation of the electronic and optical properties (i.e., binding energies, absorption wavelength, overlap of the electron-hole wave functions, recombination oscillator strength, etc.) of an exciton and a biexciton in CdTe/CdSe core/shell type-II quantum dot heterostructures has been carried out in the frame of the single band effective mass approximation. In order to determine the electronic properties, we have self-consistently solved the Poisson-Schrödinger equations in the Hartree approximation. We have considered all probable Coulomb interaction effects on both energy levels and also on the corresponding wave functions for both single exciton and biexciton. In addition, we have taken into account the quantum mechanical exchange-correlation effects in the local density approximation between same kinds of particles for biexciton. Also, we have examined the effect of the ligands and dielectric mismatch on the electronic and optical properties. We have used a different approximation proposed by Sahin and Koc [Appl. Phys. Lett. 102, 183103 (2013)] for the recombination oscillator strength of the biexciton for bound and unbound cases. The results obtained have been presented comparatively as a function of the shell thicknesses and probable physical reasons in behind of the results have been discussed in a detail.

Koc, Fatih, E-mail: fatih.koc@msn.com [Department of Physics, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Sahin, Mehmet, E-mail: mehmet.sahin@agu.edu.tr, E-mail: mehsahin@gmail.com [Department of Physics, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Department of Material Science and Nanotechnology Engineering, Abdullah Gül University, Kayseri (Turkey)

2014-05-21T23:59:59.000Z

209

Ultrasmall silicon quantum dots F. A. Zwanenburg,1,a  

E-Print Network [OSTI]

by a model based on the Poisson equation. The smallest dots 12 nm allow identification of the last charge-down planar silicon devices,1­3 produced by etching bulk materials down to nanometer dimensions, often show understanding of the specific system. This has allowed us to realize the first experimental identification

210

Phonons in quantum dots and their role in exciton dephasing  

E-Print Network [OSTI]

-nitrides. Values are taken from [5]. The values for the nitride compounds are taken from density functional dots (QDs). The state of the art is reported in detail in the present book. A large application- driven the theory of acoustic phonons in QDs is explained in Sec. 3. Special emphasis is given to continuum

Zimmermann, Roland

211

Spin Dynamics in Two-Dimensional Arrays of Quantum Dots with Local Ordering of Nanoclusters  

SciTech Connect (OSTI)

Electron paramagnetic resonance (EPR) is used to probe the spin dynamics in two-dimensional (2D) quantum dot (QD) arrays with local ordering of nanoclusters. A careful examination of EPR line shape, width and g-factor values allow us to attribute this signal to the electrons localized in the strain-induced potential wells in Si in the vicinity of the Ge dots. The strong orientation dependence of EPR line width is defined by changing localization degree of electrons at different magnetic field directions. The theoretical approximation of orientation dependence of EPR line width allows estimating the effective radius of electron localization, as {approx}80 nm.

Zinovieva, A. F.; Dvurechenskii, A. V.; Stepina, N. P.; Nikiforov, A. I.; Lyubin, A. S. [Institute of Semiconductor Physics, 630090 Novosibirsk, pr. Lavrentieva 13 (Russian Federation); Sobolev, N.; Carmo, M. C. [Departamento de Fisica e I3N, Universidade de Aveiro, Aveiro (Portugal)

2011-12-23T23:59:59.000Z

212

Non-adiabatic quantum pumping by a randomly moving quantum dot  

E-Print Network [OSTI]

We look at random time dependent fluctuations of the electrical charge in an open 1D quantum system represented by a quantum dot experiencing random lateral motion. In essentially non-adiabatic settings we study both diffusive and ballistic (Levy) regimes of the barrier motion. Here the electric current as well as the net pumped electric charge experience random fluctuations over the static background. We show that in the large-time limit $t \\to \\infty$ the wavefunction is naturally separated into the Berry-phase component (resulting from the singular part of the wave amplitude in the co-moving frame) and the non-adiabatic correction (arising from fast oscillating, slow decaying tails of the same amplitude). In the special limit of a delta-correlated continuous Gaussian random walk we obtain closed analytical expressions for the ensemble averaged amplitude in the co-moving frame and demonstrate that the main contribution to the average wavefunction and probability current comes from the Berry-phase component which leads to the saturation of the fluctuations of the electric current and the pumped charge. We also derive the exact expressions for the average propagator (in the co-moving basis representation) for both types of motion.

Stanislav Derevyanko; Daniel Waltner

2015-02-10T23:59:59.000Z

213

Analysis of InAs/GaAs quantum dot solar cells using Suns-Voc measurements  

E-Print Network [OSTI]

. Appl. Phys. 32 (1961) 510. [10] G. Wei, K. Shiu, N.C. Giebink, S.R. Forrest, Thermodynamic limits of quantum photovoltaic cell efficiency, Appl. Phys. Lett. 91 (2007) 223507. [11] A. Martí, A. Luque, Comment on Thermodynamics limits of quantum photo... /GaAs quantum dot solar cells and the influence on the open circuit voltage, Appl. Phys. Lett. 97 (2010) 123505. [26] A. Martí, A. Luque, Next Generation Photovoltaics: High Efficiency Through Full Spectrum Utilization, IOP Publishing, Bristol, UK, 2004. [27] H...

Beattie, N. S.; Zoppi, G.; See, P.; Farrer, I.; Duchamp, M.; Morrison, D. J.; Miles, R. W.; Ritchie, D. A.

2014-08-06T23:59:59.000Z

214

Auger recombination and intraband absorption of two-photon-excited carriers in colloidal CdSe quantum dots  

E-Print Network [OSTI]

Se quantum dots Yingli Qu and Wei Jia Department of Physics, National University of Singapore, Singapore 117542, Republic of Singapore Yuangang Zheng and Jackie Y. Ying Institute of Bioengineering

Wei, Ji

215

Development of a Bioorthogonal and Highly Efficient Conjugation Method for Quantum Dots using Tetrazine-Norbornene Cycloaddition  

E-Print Network [OSTI]

We present a bioorthogonal and modular conjugation method for efficient coupling of organic dyes and biomolecules to quantum dots (QDs) using a norbornene?tetrazine cycloaddition. The use of noncoordinating functional ...

Han, Hee-Sun

216

Physica E 34 (2006) 15 Single-shot readout of electron spins in a semiconductor quantum dot  

E-Print Network [OSTI]

states in a semiconductor quantum dot that is robust against charge noise and can be used even when readout (E-RO), the spin levels are positioned around the electrochemical potential of the reservoir mres

217

Role of surface states and defects in the ultrafast nonlinear optical properties of CuS quantum dots  

SciTech Connect (OSTI)

We report facile preparation of water dispersible CuS quantum dots (2–4 nm) and nanoparticles (5–11 nm) through a nontoxic, green, one-pot synthesis method. Optical and microstructural studies indicate the presence of surface states and defects (dislocations, stacking faults, and twins) in the quantum dots. The smaller crystallite size and quantum dot formation have significant effects on the high energy excitonic and low energy plasmonic absorption bands. Effective two-photon absorption coefficients measured using 100 fs laser pulses employing open-aperture Z-scan in the plasmonic region of 800 nm reveal that CuS quantum dots are better ultrafast optical limiters compared to CuS nanoparticles.

Mary, K. A. Ann; Unnikrishnan, N. V., E-mail: nvu100@yahoo.com [School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam 686560 (India); Philip, Reji [Light and Matter Physics Group, Raman Research Institute, C.V. Raman Avenue, Sadashivanagar, Bangalore 560080 (India)

2014-07-01T23:59:59.000Z

218

Spin and Conductance-Peak-Spacing Distributions in Large Quantum Dots: A Density-Functional Theory Study  

E-Print Network [OSTI]

of solid-state physics. A semiconductor quantum dot (QD) [1,2]--a nanodevice in which electron motion was regu- lar in shape [24]. Our aim here is to bridge the gap between the two theoretical approaches

Baranger, Harold U.

219

High Throughput Synthesis of Uniform Biocompatible Polymer Beads with High Quantum Dot Loading Using Microfluidic Jet-Mode Breakup  

E-Print Network [OSTI]

Uniform polymer microbeads with highly loaded quantum dots (QDs) are produced using high-throughput coherent jet breakup of a biocompatible poly(ethylene glycol) diacrylate (PEGDA) prepolymer resin, followed by in-line ...

Lee, Seung-Kon

220

Hole Spin Pumping and Re-pumping in a p-type ?-doped InAs Quantum Dot  

E-Print Network [OSTI]

We have grown high quality p-type {\\delta}-doped InAs quantum dots and have demonstrated coherent spin pumping and repumping of a hole spin in a positively charged quantum dot by means of a single-laser driving scheme under a high magnetic field in the Voigt configuration. Modeling of our system shows excellent qualitative agreement with the experimental findings and further explores the performance of the single-laser scheme for spin pumping and re-pumping.

Konstantinos G. Lagoudakis; Kevin A. Fischer; Tomas Sarmiento; Kai Mueller; Jelena Vu?kovi?

2014-08-29T23:59:59.000Z

Note: This page contains sample records for the topic "determination quantum dot" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Establishment of correlated states in a quantum dot interacting with an acoustic phonon reservoir  

E-Print Network [OSTI]

We investigate the effects of a low frequency (acoustic) phonon bath on the dynamics of a quantum dot modelled as a cascade three-level system. We show that the phonon bath appears to the upper transition of the cascade system as a broadband reservoir of inverted rather than conventional harmonic oscillators. The action of the annihilation and creation operators of the inverted oscillator are interchanges relative to those of the usual harmonic oscillator that it serves as a linear amplifier to the system, and thereby gives rise to unusual features in the dynamics of the quantum dot. We find that the phonon bath, although being in a thermal state, affects the quantum dot as a correlated-type reservoir which results in the decay of the system to a correlated two-photon state with the population distribution no longer obeying a Boltzmann distribution. It is particularly interesting that even for a zero temperature phonon reservoir the steady state is a correlated state which under appropriate conditions on the Rabi frequencies and the damping rates can reduce to a strongly correlated pure state. It is shown that the two-photon correlations result in a significant squeezing and strong two-photon correlations in the radiation field emitted by the quantum dot. The presence of the correlations in the system is manifest in the presence of quantum beats in the time evolution of the populations and the radiation intensity. The effect of the ordinary spontaneous emission on the features induced by the phonon bath is also discussed.

Hui Huang; Gao-xiang Li; Wen-ju Gu; Zbigniew Ficek

2014-08-20T23:59:59.000Z

222

Spectrum of surface plasmons excited by spontaneous quantum dot transitions  

SciTech Connect (OSTI)

We consider quantum fluctuations of near fields of a quantum emitter (two-level system (TLS) with population inversion sustained by incoherent pumping) in the near-field zone of a plasmon (metallic) nanoparticle. The spectrum of surface plasmons excited by spontaneous transitions in the quantum emitter is obtained below the lasing threshold of such a system (spaser) in the approximation of a small number of plasmons. It is shown that the relaxation rate is the sum of the quantum emitter's rates of relaxation to its thermal reservoir and the plasmon cavity. The resulting dependence of the average number of plasmons on the pump intensity indicates the nonthreshold nature of the process.

Andrianov, E. S., E-mail: andrianov.es@mipt.ru; Pukhov, A. A., E-mail: pukhov@mail.ru; Dorofeenko, A. V.; Vinogradov, A. P. [Russian Academy of Sciences, Institute of Theoretical and Applied Electrodynamics (Russian Federation)] [Russian Academy of Sciences, Institute of Theoretical and Applied Electrodynamics (Russian Federation); Lisyansky, A. A. [Queens College of the City University of New York, Department of Physics (United States)] [Queens College of the City University of New York, Department of Physics (United States)

2013-08-15T23:59:59.000Z

223

Monolithic phosphor-free InGaN/GaN quantum dot wavelength converter white light emitting diodes  

SciTech Connect (OSTI)

We report the characteristics of phosphor-free self-organized InGaN/GaN quantum dot wavelength converter white light emitting diodes grown by plasma assisted molecular beam epitaxy. The exciting quantum dots, in which electrically injected carriers recombine, are blue-emitting and the converter dots are red-emitting. We have studied the effect of tuning the number of dot layers and the peak emission wavelength of the exciting and converter dots on the nature of the emitted white light, in terms of the chromaticity coordinates and correlated color temperature. Depending on the values of these wavelengths, color temperatures in the range of 4420–6700?K have been derived at a current density of 45?A/cm{sup 2} across multiple devices. The variation of the color temperature with change in injection current is found to be very small.

Jahangir, Shafat; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States); Pietzonka, Ines; Strassburg, Martin [OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, Regensburg (Germany)

2014-09-15T23:59:59.000Z

224

Strongly confining bare core CdTe quantum dots in polymeric microdisk resonators  

SciTech Connect (OSTI)

We report on a simple route to the efficient coupling of optical emission from strongly confining bare core CdTe quantum dots (QDs) to the eigenmodes of a micro-resonator. The quantum emitters are embedded into QD/polymer sandwich microdisk cavities. This prevents photo-oxidation and yields the high dot concentration necessary to overcome Auger enhanced surface trapping of carriers. In combination with the very high cavity Q-factors, interaction of the QDs with the cavity modes in the weak coupling regime is readily observed. Under nanosecond pulsed excitation the CdTe QDs in the microdisks show lasing with a threshold energy as low as 0.33 ?J.

Flatae, Assegid, E-mail: assegid.flatae@kit.edu; Grossmann, Tobias; Beck, Torsten; Wiegele, Sarah; Kalt, Heinz [Institute of Applied Physics and DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology (KIT), Wolfgang-Gaede-Str.1, 76131 Karlsruhe (Germany)

2014-01-01T23:59:59.000Z

225

Phonon-assisted robust and deterministic two-photon biexciton preparation in a quantum dot  

E-Print Network [OSTI]

We investigate both experimentally and theoretically a simple yet more robust and flexible alternative to Rabi oscillation-type biexciton preparation protocols traditionally used for semiconductor quantum dots. The quantum dot is excited by a strong laser pulse positively detuned from the two-photon resonance yielding an on demand initialization of the biexciton state by making use of the phonon-induced thermalization of the photon dressed states. It is shown that for excitation pulses in the picosecond range, a stable and high fidelity of up to $f_{XX}=0.98\\pm 0.01$ is reached. Notably, the generated photons show similar coherence properties as measured in the resonant two-photon scheme. This protocol is a powerful tool for the control of complex solid state systems combining radiative cascades, entanglement and resonant cavity modes.

S. Bounouar; M. Müller; A. M. Barth; M. Glässl; V. M. Axt; P. Michler

2014-08-29T23:59:59.000Z

226

High open circuit voltages of solar cells based on quantum dot and dye hybrid-sensitization  

SciTech Connect (OSTI)

A type of solar cell based on quantum dot (QD) and dye hybrid-sensitized mesoporous TiO{sub 2} film electrode was designed and reported. The electrode was consisted of a TiO{sub 2} nanoparticle (NP) thin film layer sensitized with CdS quantum dot (QD) and an amorphous TiO{sub 2} coated TiO{sub 2} NP thin film layer that sensitized with C106 dye. The amorphous TiO{sub 2} layer was obtained by TiCl{sub 4} post-treatment to improve the properties of solar cells. Research showed that the solar cells fabricated with as-prepared hybrid-sensitized electrode exhibited excellent photovoltaic performances and a fairly high open circuit voltage of 796?mV was achieved.

Zhao, Yujie; Zhao, Wanyu; Chen, Jingkuo; Li, Huayang; Fu, Wuyou, E-mail: hari@hpu.edu.cn, E-mail: fuwy56@163.com; Sun, Guang; Cao, Jianliang; Zhang, Zhanying [School of Materials Science and Engineering and Cultivating Base for Key Laboratory of Environment-friendly Inorganic Materials in University of Henan Province, Henan Polytechnic University, Jiaozuo 454000 (China)] [School of Materials Science and Engineering and Cultivating Base for Key Laboratory of Environment-friendly Inorganic Materials in University of Henan Province, Henan Polytechnic University, Jiaozuo 454000 (China); Bala, Hari, E-mail: hari@hpu.edu.cn, E-mail: fuwy56@163.com [School of Materials Science and Engineering and Cultivating Base for Key Laboratory of Environment-friendly Inorganic Materials in University of Henan Province, Henan Polytechnic University, Jiaozuo 454000 (China) [School of Materials Science and Engineering and Cultivating Base for Key Laboratory of Environment-friendly Inorganic Materials in University of Henan Province, Henan Polytechnic University, Jiaozuo 454000 (China); College of Chemistry and Chemical Engineering, Inner Mongolia University for the Nationalities, Tongliao 028043 (China)

2014-01-06T23:59:59.000Z

227

Synthesis of Non-blinking Semiconductor Quantum Dots Emitting in the Near-Infrared  

SciTech Connect (OSTI)

Our previous work demonstrates that Quasi-Type II CdSe/CdS core-shell quantum dots with thick shells (3-5 nm) exhibit unique photophysical characteristics, including improved chemical robustness over typical thin-shelled core/shell systems and the elimination of blinking through suppression of nonradiative Auger recombination. Here we describe a new thick-shelled heterostructure, InP/CdS, which exhibits a Type II bandgap alignment producing near-infrared (NIR) emission. Samples with a range of shell thicknesses were synthesized, enabling shell-thickness-dependent study of the absorbance and emission spectra, fluorescence lifetimes, and quantum yields. InP/CdS/ZnS core/shell/shell structures were also synthesized to reduce cadmium exposure for applications in the biological environment. Single particle spectroscopy indicates reduced blinking and improved photostability with increasing shell thickness, resulting in thick-shelled dots that are appropriate for single-particle tracking measurements with NIR emission.

Dennis, Allison M. [Los Alamos National Laboratory; Mangum, Benjamin D. [Los Alamos National Laboratory; Piryatinski, Andrei [Los Alamos National Laboratory; Park, Young-Shin [Los Alamos National Laboratory; Htoon, Han [Los Alamos National Laboratory; Hollingsworth, Jennifer A. [Los Alamos National Laboratory

2012-06-21T23:59:59.000Z

228

Pulsed laser deposition of Mn doped CdSe quantum dots for improved solar cell performance  

SciTech Connect (OSTI)

In this work, we demonstrate (1) a facile method to prepare Mn doped CdSe quantum dots (QDs) on Zn{sub 2}SnO{sub 4} photoanodes by pulsed laser deposition and (2) improved device performance of quantum dot sensitized solar cells of the Mn doped QDs (CdSe:Mn) compared to the undoped QDs (CdSe). The band diagram of photoanode Zn{sub 2}SnO{sub 4} and sensitizer CdSe:Mn QD is proposed based on the incident-photon-to-electron conversion efficiency (IPCE) data. Mn-modified band structure leads to absorption at longer wavelengths than the undoped CdSe QDs, which is due to the exchange splitting of the CdSe:Mn conduction band by the Mn dopant. Three-fold increase in the IPCE efficiency has also been observed for the Mn doped samples.

Dai, Qilin; Wang, Wenyong, E-mail: wwang5@uwyo.edu, E-mail: jtang2@uwyo.edu; Tang, Jinke, E-mail: wwang5@uwyo.edu, E-mail: jtang2@uwyo.edu [Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071 (United States); Sabio, Erwin M. [Department of Chemistry, University of Wyoming, Laramie, Wyoming 82071 (United States)

2014-05-05T23:59:59.000Z

229

Carrier transfer from InAs quantum dots to ErAs metal nanoparticles  

SciTech Connect (OSTI)

Erbium arsenide (ErAs) is a semi-metallic material that self-assembles into nanoparticles when grown in GaAs via molecular beam epitaxy. We use steady-state and time-resolved photoluminescence to examine the mechanism of carrier transfer between indium arsenide (InAs) quantum dots and ErAs nanoparticles in a GaAs host. We probe the electronic structure of the ErAs metal nanoparticles (MNPs) and the optoelectronic properties of the nanocomposite and show that the carrier transfer rates are independent of pump intensity. This result suggests that the ErAs MNPs have a continuous density of states and effectively act as traps. The absence of a temperature dependence tells us that carrier transfer from the InAs quantum dots to ErAs MNPs is not phonon assisted. We show that the measured photoluminescence decay rates are consistent with a carrier tunneling model.

Haughn, C. R.; Chen, E. Y.; Zide, J. M. O.; Doty, M. F., E-mail: doty@udel.edu [Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716 (United States); Steenbergen, E. H.; Bissell, L. J.; Eyink, K. G. [AFRL/RXAN, Wright Patterson AFB, Ohio 45433 (United States)

2014-09-08T23:59:59.000Z

230

Note: Near infrared spectral and transient measurements of PbS quantum dots luminescence  

SciTech Connect (OSTI)

We describe an experimental setup for the characterization of luminescence from nanostructures. The setup is intended for steady-state and time-resolved luminescence measurements in the near-infrared region. The setup allows us to study spectral luminescence properties in the spectral range of 0.8–2.0 ?m with high spectral resolution and kinetic luminescence properties between 0.8 and 1.7 ?m with a time resolution of 3 ns. The capabilities of the system are illustrated by taking luminescence measurements from PbS quantum dots. We established the size dependencies of the optical properties of the PbS quantum dots over a wide spectral range. Finally, the energy transfer process was studied with a high temporal and spectral resolution.

Parfenov, P. S., E-mail: qrspeter@pochta.ru; Litvin, A. P., E-mail: litvin88@gmail.com; Ushakova, E. V.; Fedorov, A. V.; Baranov, A. V. [National Research University of Informational Technologies, Mechanics and Optics, 197101 49, Kronverkskiy pr., Saint Petersburg (Russian Federation)] [National Research University of Informational Technologies, Mechanics and Optics, 197101 49, Kronverkskiy pr., Saint Petersburg (Russian Federation); Berwick, K. [School of Electronic and Communications Engineering, Dublin Institute of Technology, Kevin Street, Dublin 8 (Ireland)] [School of Electronic and Communications Engineering, Dublin Institute of Technology, Kevin Street, Dublin 8 (Ireland)

2013-11-15T23:59:59.000Z

231

Decision making based on optical excitation transfer via near-field interactions between quantum dots  

SciTech Connect (OSTI)

Optical near-field interactions between nanostructured matters, such as quantum dots, result in unidirectional optical excitation transfer when energy dissipation is induced. This results in versatile spatiotemporal dynamics of the optical excitation, which can be controlled by engineering the dissipation processes and exploited to realize intelligent capabilities such as solution searching and decision making. Here, we experimentally demonstrate the ability to solve a decision making problem on the basis of optical excitation transfer via near-field interactions by using colloidal quantum dots of different sizes, formed on a geometry-controlled substrate. We characterize the energy transfer behavior due to multiple control light patterns and experimentally demonstrate the ability to solve the multi-armed bandit problem. Our work makes a decisive step towards the practical design of nanophotonic systems capable of efficient decision making, one of the most important intellectual attributes of the human brain.

Naruse, Makoto, E-mail: naruse@nict.go.jp [Photonic Network Research Institute, National Institute of Information and Communications Technology, 4-2-1 Nukui-kita, Koganei, Tokyo 184-8795 (Japan); Nomura, Wataru; Ohtsu, Motoichi [Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); Aono, Masashi [Earth-Life Science Institute, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguru-ku, Tokyo 152-8550 (Japan); PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi-shi, Saitama 332-0012 (Japan); Sonnefraud, Yannick; Drezet, Aurélien; Huant, Serge [Université Grenoble Alpes, Inst. NEEL, F-38000 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Kim, Song-Ju [WPI Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2014-10-21T23:59:59.000Z

232

Coherent Optical Spectroscopy of a Single Quantum Dot Via an Off-Resonant Cavity  

E-Print Network [OSTI]

In recent experiments on coupled quantum dot (QD) optical cavity systems a pronounced interaction between the dot and the cavity has been observed even for detunings of many cavity linewidths. This interaction has been attributed to an incoherent phonon-mediated scattering process and is absent in atomic systems. Here, we demonstrate that despite its incoherent nature, this process preserves the signatures of coherent interaction between a QD and a strong driving laser, which may be observed via the optical emission from the off-resonant cavity. Under bichromatic driving of the QD, the cavity emission exhibits spectral features consistent with optical dressing of the QD transition. In addition to revealing new aspects of the off-resonant QD-cavity interaction, this result provides a new, simpler means of coherently probing QDs than traditional approaches and opens the possibility of employing off-resonant cavities to optically interface QD-nodes in quantum networks.

Arka Majumda; Alexander Papageorge; Erik D. Kim; Michal Bajscy; Hyochul Kim; Pierre Petroff; Jelena Vuckovic

2011-03-14T23:59:59.000Z

233

Enhanced single-photon emission from a quantum dot in a micropost microcavity  

E-Print Network [OSTI]

We demonstrate a single-photon source based on a quantum dot in a micropost microcavity that exhibits a large Purcell factor together with a small multi-photon probability. For a quantum dot on resonance with the cavity, the spontaneous emission rate is increased by a factor of five, while the probability to emit two or more photons in the same pulse is reduced to 2% compared to a Poisson-distributed source of the same intensity. In addition to the small multi-photon probability, such a strong Purcell effect is important in a single-photon source for improving the photon outcoupling efficiency and the single-photon generation rate, and for bringing the emitted photon pulses closer to the Fourier transform limit.

Jelena Vuckovic; David Fattal; Charles Santori; Glenn Solomon; Yoshihisa Yamamoto

2003-07-03T23:59:59.000Z

234

Direct and indirect capture of carriers into the lasing ground state and the light-current characteristic of quantum dot lasers  

SciTech Connect (OSTI)

We calculate the light-current characteristic (LCC) of a quantum dot (QD) laser under the conditions of both direct and indirect capture of carriers from the optical confinement layer into the lasing ground state in QDs. We show that direct capture is a dominant process determining the ground-state LCC. Only when direct capture is slow, the role of indirect capture (capture into the QD excited state and subsequent intradot relaxation to the ground state) becomes important.

Wu, Yuchang, E-mail: yuchangw@vt.edu; Asryan, Levon V., E-mail: asryan@vt.edu [Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061 (United States)

2014-03-14T23:59:59.000Z

235

Local droplet etching – Nanoholes, quantum dots, and air-gap heterostructures  

SciTech Connect (OSTI)

Local droplet etching (LDE) allows the self-organized generation of nanoholes in semiconductor surfaces and is fully compatible with molecular beam epitaxy (MBE). The influence of the process parameters as well as of droplet and substrate materials on the LDE nanohole morphology is discussed. Furthermore, recent applications of LDE, the fabrication of quantum dots by hole filling and the creation of air-gap heterostructures are addressed.

Heyn, Ch.; Sonnenberg, D.; Graf, A.; Kerbst, J.; Stemmann, A.; Hansen, W. [Institute of Applied Physics, University of Hamburg, Jungiusstr. 11, 20355 Hamburg (Germany)

2014-05-15T23:59:59.000Z

236

Tuning photoluminescence of reduced graphene oxide quantum dots from blue to purple  

SciTech Connect (OSTI)

Reduced graphene oxide quantum dots (rGOQDs) were synthesized by annealing GOQDs in H{sub 2} atmosphere. The photoluminescence (PL) properties of GOQDs and the rGOQDs samples were investigated. The results showed that compared to GOQDs, a blue to purple tunable PL of rGOQDs can be obtained by regulating the annealing temperature. The increase fraction of the newly formed isolated sp{sup 2} clusters may be responsible for the observed tunable PL.

Liu, Fuchi [Physics Department and Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093 (China); College of Physics and Technology, Guangxi Normal University, Guilin 541004 (China); Tang, Tao; Feng, Qian; Li, Ming; Liu, Yuan; Tang, Nujiang, E-mail: tangnujiang@nju.edu.cn; Zhong, Wei; Du, Youwei [Physics Department and Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093 (China)

2014-04-28T23:59:59.000Z

237

Probing the ladder of dressed states and nonclassical light generation in quantum dot-cavity QED  

E-Print Network [OSTI]

We investigate the photon induced tunneling phenomena in a photonic crystal cavity containing a strongly coupled quantum dot and describe how this tunneling can be used to generate photon states consisting mainly of a particular Fock state. Additionally, we study experimentally the photon-induced tunneling as a function of excitation laser power and frequency and show the signature of second rung of the Jaynes-Cummings Hamiltonian in the observed photon-statistics.

Arka Majumdar; Michal Bajcsy; Jelena Vuckovic

2011-10-21T23:59:59.000Z

238

Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers  

SciTech Connect (OSTI)

There have been relatively few reports of lasing from InSb quantum dots (QDs). In this work, type II InSb/InAs QD laser diodes emitting in the mid-infrared at 3.1??m have been demonstrated and characterized. The gain was determined to be 2.9?cm{sup ?1} per QD layer, and the waveguide loss was ?15?cm{sup ?1} at 4?K. Spontaneous emission measurements below threshold revealed a blue shift of the peak wavelength with increasing current, indicating filling of ground state heavy hole levels in the QDs. The characteristic temperature, T{sub 0}?=?101?K below 50?K, but decreased to 48?K at higher temperatures. The emission wavelength of these lasers showed first a blue shift followed by a red shift with increasing temperature. A hybrid structure was used to fabricate the laser by combining a liquid phase epitaxy grown p-InAs{sub 0.61}Sb{sub 0.13}P{sub 0.26} lower cladding layer and an upper n{sup +} InAs plasmon cladding layer which resulted in a maximum operating temperature (T{sub max}) of 120?K in pulsed mode, which is the highest reported to date.

Lu, Q.; Zhuang, Q.; Hayton, J.; Yin, M.; Krier, A. [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2014-07-21T23:59:59.000Z

239

Heat induced nanoforms of zinc oxide quantum dots and their characterization  

SciTech Connect (OSTI)

In our studies we observed heat induced phase transitions of Zinc oxide quantum dots at 60, 200, 360 and 400 Degree-Sign C, where all the transitions were irreversible except the transition at 60 Degree-Sign C which wasa reversible one. The phase transition at 60 Degree-Sign C indicated a heat induced conformational change which was supported here by studying polarizing micrographs of ZnO quantum dots thin film. The X-ray diffraction studies of the sample fired at different temperatures as indicated by the thermal analysis were performed in order to understand the changes occurred due to transitions. The study also indicated a new and simple approach to develop ZnO nanorods by just thermal decomposition of the ZnO quantum dots firing in furnace at 200 Degree-Sign C with 2h soaking. In order to have a proper insight of the structural changes we performed scanning electron microscopy. Optical characterization was done by UV-Vis and fluorescence spectrophotometer.

Dey, Anindita [Jadavpur University, Physics Department (India); Basu, Ruma [Jogamaya Devi College, Physics department (India); Das, Sukhen, E-mail: sukhendasju@gmail.com; Nandy, Papiya [Jadavpur University, Physics Department (India)

2012-02-15T23:59:59.000Z

240

Spectral properties of a hybrid-qubit model based on a two-dimensional quantum dot  

E-Print Network [OSTI]

The design and study of hybrid qubits is driven by their ability to get along the best of charge qubits and of spin qubits, {\\em i.e.} the speed of operation of the former and the very slow decoherence rates of the latter ones. There are several proposals to implement hybrid qubits, this works focuses on the spectral properties of an one-electron hybrid qubit. By design, the information would be stored in the electronic spin and the switching between the qubit basis states would be achieved using an external ac electric field. The electron is confined in a two-dimensional quantum dot, whose confining potential is given by a quartic potential, features that are typical of GaAS quantum dots. Besides the confining potential that characterizes the quantum dot there are two static magnetic fields applied to the system, one is a large constant Zeeman field and the other one has a constant gradient. We study the spectral properties of the model Hamiltonian, a Scr\\"odinger-Pauli Hamiltonian with realistic parameters, using the Ritz method. In particular, we look for regions of the parameter space where the lowest eigenenergies and their eigenfunctions allow to define a qubit which is stable under perturbations to the design parameters. We put special attention to the constraints that the design imposes over the magnetic fields, the tuning of the energy gap between the qubit states and the expectation value of the spin operator where the information would be stored.

Alba Y. Ramos; Omar Osenda

2015-03-27T23:59:59.000Z

Note: This page contains sample records for the topic "determination quantum dot" from the National Library of EnergyBeta (NLEBeta).
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241

Microchemical systems for the synthesis of nanostructures : quantum dots  

E-Print Network [OSTI]

We have developed a continuous multi-stage high-temperature and high-pressure microfluidic system. High-pressure conditions enabled the use low molecular weight solvents that have previously not been available for quantum ...

Baek, Jinyoung

2012-01-01T23:59:59.000Z

242

Quantum dot ternary-valued full-adder: Logic synthesis by a multiobjective design optimization based on a genetic algorithm  

SciTech Connect (OSTI)

A methodology is proposed for designing a low-energy consuming ternary-valued full adder based on a quantum dot (QD) electrostatically coupled with a single electron transistor operating as a charge sensor. The methodology is based on design optimization: the values of the physical parameters of the system required for implementing the logic operations are optimized using a multiobjective genetic algorithm. The searching space is determined by elements of the capacitance matrix describing the electrostatic couplings in the entire device. The objective functions are defined as the maximal absolute error over actual device logic outputs relative to the ideal truth tables for the sum and the carry-out in base 3. The logic units are implemented on the same device: a single dual-gate quantum dot and a charge sensor. Their physical parameters are optimized to compute either the sum or the carry out outputs and are compatible with current experimental capabilities. The outputs are encoded in the value of the electric current passing through the charge sensor, while the logic inputs are supplied by the voltage levels on the two gate electrodes attached to the QD. The complex logic ternary operations are directly implemented on an extremely simple device, characterized by small sizes and low-energy consumption compared to devices based on switching single-electron transistors. The design methodology is general and provides a rational approach for realizing non-switching logic operations on QD devices.

Klymenko, M. V.; Remacle, F., E-mail: fremacle@ulg.ac.be [Department of Chemistry, B6c, University of Liege, B4000 Liege (Belgium)

2014-10-28T23:59:59.000Z

243

Nonlinear Temporal Dynamics of Strongly Coupled Quantum Dot-Cavity System  

E-Print Network [OSTI]

We theoretically analyze and simulate the temporal dynamics of strongly coupled quantum dot-cavity system driven by a resonant laser pulse. We observe the signature of Rabi oscillation in the time resolved response of the system (i.e., in the numerically calculated cavity output), derive simplified linear and non-linear semi-classical models that approximate well the system's behavior in the limits of high and low power drive pulse, and describe the role of quantum coherence in the exact dynamics of the system. Finally, we also present experimental data showing the signature of the Rabi oscillation in time domain.

Arka Majumdar; Dirk Englund; Michal Bajcsy; Jelena Vuckovic

2011-10-20T23:59:59.000Z

244

An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode  

SciTech Connect (OSTI)

We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski-Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.

Mehta, M.; Michaelis de Vasconcellos, S.; Zrenner, A.; Meier, C. [Department of Physics and Center for Optoelectronics and Photonics Paderborn (CeOPP), University of Paderborn, Warburger Street 100, 33098 Paderborn (Germany); Reuter, D.; Wieck, A. D. [Applied Solid State Physics, Ruhr-University of Bochum, Universitaetsstr. 150, 44780 Bochum (Germany)

2010-10-04T23:59:59.000Z

245

Photoconductivity of structures based on the SnO{sub 2} porous matrix coupled with core-shell CdSe/CdS quantum dots  

SciTech Connect (OSTI)

Embedding of quantum dots into porous oxide matrixes is a perspective technique for photosensitization of a structure. We show that the sensitization efficiency may be increased by the use of core-shell quantum dots. It is demonstrated that the photoresponse amplitude in a SnO{sub 2} porous matrix with CdSe/CdS quantum dots depends non-monotonously on the number of atomic layers in a shell. The best results are obtained for SnO{sub 2} matrixes coupled with the quantum dots with three atomic layers of a shell. Mechanisms responsible for the structure sensitization are discussed.

Drozdov, K. A.; Kochnev, V. I.; Dobrovolsky, A. A.; Khokhlov, D. R. [Department of Physics, Moscow State University, 119991 Moscow (Russian Federation)] [Department of Physics, Moscow State University, 119991 Moscow (Russian Federation); Popelo, A. V. [Department of Materials Science, Moscow State University, 119991 Moscow (Russian Federation)] [Department of Materials Science, Moscow State University, 119991 Moscow (Russian Federation); Rumyantseva, M. N.; Gaskov, A. M.; Ryabova, L. I. [Department of Chemistry, Moscow State University, 119991 Moscow (Russian Federation)] [Department of Chemistry, Moscow State University, 119991 Moscow (Russian Federation); Vasiliev, R. B. [Department of Materials Science, Moscow State University, 119991 Moscow (Russian Federation) [Department of Materials Science, Moscow State University, 119991 Moscow (Russian Federation); Department of Chemistry, Moscow State University, 119991 Moscow (Russian Federation)

2013-09-23T23:59:59.000Z

246

A theoretical analysis of the optical absorption properties in one-dimensional InAs/GaAs quantum dot superlattices  

SciTech Connect (OSTI)

We present theoretical investigations of miniband structures and optical properties of InAs/GaAs one-dimensional quantum dot superlattices (1D-QDSLs). The calculation is based on the multi-band k·p theory, including the conduction and valence band mixing effects, the strain effect, and the piezoelectric effect; all three effects have periodic boundary conditions. We find that both the electronic and optical properties of the 1D-QDSLs show unique states which are different from those of well known single quantum dots (QDs) or quantum wires. We predict that the optical absorption spectra of the 1D-QDSLs strongly depend on the inter-dot spacing because of the inter-dot carrier coupling and changing strain states, which strongly influence the conduction and valence band potentials. The inter-miniband transitions form the absorption bands. Those absorption bands can be tuned from almost continuous (closely stacked QD case) to spike-like shape (almost isolated QD case) by changing the inter-dot spacing. The polarization of the lowest absorption peak for the 1D-QDSLs changes from being parallel to the stacking direction to being perpendicular to the stacking direction as the inter-dot spacing increases. In the case of closely stacked QDs, in-plane anisotropy, especially [110] and [11{sup ¯}0] directions also depend on the inter-dot spacing. Our findings and predictions will provide an additional degree of freedom for the design of QD-based optoelectronic devices.

Kotani, Teruhisa, E-mail: kotani.teruhisa@sharp.co.jp [Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567 (Japan); Institute for Nanoelectronics, Technische Universität München, Arcisstr. 21, 80333 Munich (Germany); Birner, Stefan [Institute for Nanoelectronics, Technische Universität München, Arcisstr. 21, 80333 Munich (Germany); Walter Schottky Institute, Technische Universität München, Am Coulombwall 4, 85748 Garching (Germany); Lugli, Paolo [Institute for Nanoelectronics, Technische Universität München, Arcisstr. 21, 80333 Munich (Germany); Hamaguchi, Chihiro [Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567 (Japan)

2014-04-14T23:59:59.000Z

247

Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodes  

E-Print Network [OSTI]

2/2014 Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Layer for Efficient Hole-Injection in Quantum Dot Light- Emitting Diodes Xuyong Yang, Evren Mutlugun-based devices, the organic interfacial buffer layers have inferior thermal stability. Efforts to replace PEDOT

Demir, Hilmi Volkan

248

Polarization-entangled photon generation by a semiconductor quantum dot coupled to a cavity interacting with external fields  

E-Print Network [OSTI]

We theoretically investigate polarization-entangled photon generation by using a semiconductor quantum dot embedded in a microcavity. The entangled states can be produced by the application of two cross-circularly polarized laser fields. The quantum dot nanostructure is considered as a four-level system (ground, two excitons and bi-exciton states) and the theoretical study relies on the dressed states scheme. The quantum correlations, reported in terms of the entanglement of formation, are extensively studied for several values of the important parameters of the quantum dot system as the bi-exciton binding energy, {the decoherence times of the characteristic transitions, the quality factor of the cavity} and the intensities of the applied fields.

Kostas Blekos; Nikos Iliopoulos; Maria-Eftaksia Stasinou; Evaggelos Vlachos; Andreas F. Terzis

2014-04-07T23:59:59.000Z

249

Quantum dot based memory devices: Current status and future prospect by simulation perspective  

SciTech Connect (OSTI)

We discuss the simulation of floating gate MOSFET memory performance consists of Si/Ge/Si quantum dots for electronics storage nodes with higk-? material as the tunnel oxide. Heterostructure quantum dot was proposed to maintain the good memory performance without losing the long retention characteristic. As the results, retention time could be increase significantly without deteriorating the writing/erasing speed. By selected the dot size of 9–15nm and the tunnel oxide thickness of 2nm, the retention characteristic can reach up to 10{sup 9}s while the writing and erasing time at the order of 10{sup ?6}s. By replace the SiO{sub 2} tunnel oxide with high-? material such as HfO{sub 2}, ZrO{sub 2}, and Y{sub 2}O{sub 3} the leakage current due to the shrinkage of tunnel oxide thickness can be suppressed by the factor of 10 for the EOT lower than ?1nm. Moreover, the charge-trapping that generated by the defect at Si substrate and higk-? material interface are fully considered. We found that, the charge-trapping affects the retention time and memory operation performance. By increasing the charge-trapping depth and width, the memory operation time decrease significantly while the retention characteristic slightly improved.

Darma, Y., E-mail: yudi@fi.itb.ac.id; Rusydi, A., E-mail: yudi@fi.itb.ac.id [Department of Physics, Institut Teknologi Bandung, Ganesa 10 Bandung 40132, Indonesia and NUSNNI-NanoCore, Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 and Singapore Synchrotron Light Source, National U (Singapore)

2014-02-24T23:59:59.000Z

250

Height stabilization of GaSb/GaAs quantum dots by Al-rich capping  

SciTech Connect (OSTI)

GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

Smakman, E. P., E-mail: e.p.smakman@tue.nl; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands); DeJarld, M.; Martin, A. J.; Millunchick, J. [Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Luengo-Kovac, M.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2014-09-01T23:59:59.000Z

251

Influence of Cationic Precursors on CdS Quantum-Dot-Sensitized Solar Cell Prepared by Successive Ionic Layer Adsorption and  

E-Print Network [OSTI]

as 15% was achieved for perovskite-sensitized solar cells.7 As a derivative of dye-sensitized solarInfluence of Cationic Precursors on CdS Quantum-Dot-Sensitized Solar Cell Prepared by Successive (QDs) onto porous oxide films for quantum-dot-sensitized solar cell (QDSC) applications. In this work

Cao, Guozhong

252

Transition to Landau levels in graphene quantum dots F. Libisch, 1, * S. Rotter, 1 J. Gttinger, 2 C. Stampfer, 2,3 and J. Burgdrfer 1  

E-Print Network [OSTI]

Transition to Landau levels in graphene quantum dots F. Libisch, 1, * S. Rotter, 1 J. Güttinger, 2 investigate the electronic eigenstates of graphene quantum dots of realistic size #up to 80 nm diameter graphene lattice structure, bulk defects, and localization effects at the edges. Key to the understanding

Florian, Libisch

253

Transition to Landau levels in graphene quantum dots F. Libisch,1,* S. Rotter,1 J. Gttinger,2 C. Stampfer,2,3 and J. Burgdrfer1  

E-Print Network [OSTI]

Transition to Landau levels in graphene quantum dots F. Libisch,1,* S. Rotter,1 J. Güttinger,2 C the electronic eigenstates of graphene quantum dots of realistic size up to 80 nm diameter in the presence-level regime at high fields. Details of this transition sensitively depend on the underlying graphene lattice

Florian, Libisch

254

Quantum-dot all-optical logic in a structured vacuum  

SciTech Connect (OSTI)

We demonstrate multiwavelength channel optical logic operations on the Bloch vector of a quantum two-level system in the structured electromagnetic vacuum of a bimodal photonic crystal waveguide. This arises through a bichromatic strong-coupling effect that enables unprecedented control over single quantum-dot (QD) excitation through two beams of ultrashort femtojoule pulses. The second driving pulse (signal) with slightly different frequency and weaker strength than the first (holding) pulse leads to controllable strong modulation of the QD Bloch vector evolution path. This occurs through resonant coupling of the signal pulse with the Mollow sideband transitions created by the holding pulse. The movement of the Mollow sidebands during the passage of the holding pulse leads to an effective chirping in transition frequency seen by the signal. Bloch vector dynamics in the rotating frame of the signal pulse and within the dressed-state basis created by the holding pulse reveals that this chirped coupling between the signal pulse and the Mollow sidebands leads to either augmentation or negation of the final quantum-dot population (after pulse passage) compared to the outcome of the holding pulse alone and depending on the relative frequencies of the pulses. By making use of this extra degree of freedom for ultrafast control of QD excitations, applications in ultrafast all-optical logic and, or, and not gates are proposed in the presence of significant (0.1) THz nonradiative dephasing and (about 1%) inhomogeneous broadening.

Ma Xun; John, Sajeev [Department of Physics, University of Toronto, Toronto, M5S 1A7 (Canada)

2011-07-15T23:59:59.000Z

255

Fluorescence relaxation dynamics of CdSe and CdSe/CdS core/shell quantum dots  

SciTech Connect (OSTI)

Time-resolved fluorescence spectra for colloidal CdSe and CdSe/CdS core/shell quantum dots have been investigated to know their electron relaxation dynamics at the maximum steady state fluorescence intensity. CdSe core and CdSe/CdS type I core-shell materials with different shell (CdS) thicknesses have been synthesized using mercaptoacetic acid as a capping agent. Steady state absorption and emission studies confirmed successful synthesis of CdSe and CdSe/CdS core-shell quantum dots. The fluorescence shows a tri-exponential decay with lifetimes 57.39, 7.82 and 0.96 ns for CdSe quantum dots. The lifetime of each recombination decreased with growth of CdS shell over the CdSe core, with maximum contribution to fluorescence by the fastest transition.

Kaur, Gurvir; Kaur, Harmandeep [Centre of Advanced Study in Physics, Department of Physics, Panjab University, Chandigarh-160014 (India); Tripathi, S. K., E-mail: surya@pu.ac.in [Centre of Advanced Study in Physics, Panjab University, Chandigarh- 160014 (India)

2014-04-24T23:59:59.000Z

256

Synthesis of indium sulphide quantum dots in perfluoronated ionomer membrane  

SciTech Connect (OSTI)

In this paper, we demonstrate a simple and efficient method for synthesis of ?-indium sulphide (In{sub 2}S{sub 3}) nanoparticles embedded in an ionomer matrix (nafion membrane). The influence of reaction temperature on structural, compositional and optical properties of these films were analysed using X-Ray Diffraction, EDAX, UV-Vis absorption spectroscopy and photoluminescence studies. Average particle diameter was estimated using modified effective mass approximation method. Absorption spectra of In{sub 2}S{sub 3} nanoparticles show blue shift compared to bulk In{sub 2}S{sub 3}, indicating strong quantum size confinement effects. PL emission in the wavelength range 530–600 nm was recorded using a 488 nm line from an Ar{sup +} laser as the excitation source.

Sumi, R. [Centre for Nanotechnology Research, VIT University, Vellore (India); Warrier, Anita R.; Vijayan, C. [Department of Physics, Indian Institute of Technology, Chennai (India)

2014-01-28T23:59:59.000Z

257

Highly entangled photons from hybrid piezoelectric-semiconductor quantum dot devices  

E-Print Network [OSTI]

Entanglement resources are key ingredients of future quantum technologies. If they could be efficiently integrated into a semiconductor platform a new generation of devices could be envisioned, whose quantum-mechanical functionalities are controlled via the mature semiconductor technology. Epitaxial quantum dots (QDs) embedded in diodes would embody such ideal quantum devices, but QD structural asymmetries lower dramatically the degree of entanglement of the sources and hamper severely their real exploitation in the foreseen applications. In this work, we overcome this hurdle using strain-tunable optoelectronic devices, where any QD can be tuned for the emission of highly polarization-entangled photons. The electrically-controlled sources violate Bell inequalities without the need of spectral or temporal filtering and they feature the highest degree of entanglement ever reported for QDs, with concurrence as high as 0.75(2). These quantum-devices are at present the most promising candidates for the direct implementation of QD-based entanglement-resources in quantum information science and technology.

Rinaldo Trotta; Johannes S. Wildmann; Eugenio Zallo; Oliver G. Schmidt; Armando Rastelli

2014-03-02T23:59:59.000Z

258

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect (OSTI)

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Néel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

259

Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby  

DOE Patents [OSTI]

A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.

Semonin, Octavi Escala; Luther, Joseph M; Beard, Matthew C; Chen, Hsiang-Yu

2014-04-01T23:59:59.000Z

260

Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes  

SciTech Connect (OSTI)

Self-assembled InSb submonolayer quantum dots (QDs) in an InAs matrix have been grown by molecular beam epitaxy using Sb{sub 2} and As{sub 2} fluxes. The structures exhibit bright midinfrared photoluminescence up to room temperature. Intense room temperature electroluminescence with a peak at wavelength near 3.8 {mu}m was observed from p-i-n light emitting diode structures containing ten InSb submonolayer QD sheets inserted within the InAs active region.

Carrington, P. J.; Solov'ev, V. A.; Zhuang, Q.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom); Ivanov, S. V. [Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021 (Russian Federation)

2008-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "determination quantum dot" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Slow-light propagation using mode locking of spin precession in quantum dots  

SciTech Connect (OSTI)

We propose using mode locking to enable coherent nonlinear optical effects in inhomogenously broadened spin ensembles. We carry out detailed calculations for quantum dot systems in which increased spin coherence via mode locking has been recently observed [A. Greilich et al., Science 313, 341 (2006); 317, 1896 (2007)]. We show how, in the presence of spin locking, a strong pulse-matching effect occurs, providing a powerful tool for high-bandwidth linear optical processing. We then go on to study 'slow light' in this system and show that high-bandwidth pulses can be controllably delayed by a time comparable to the pulse width.

Shabaev, A. [George Mason University, Fairfax Virginia 22030 (United States); Dutton, Z. [Raytheon BBN Technologies, 10 Moulton Street, Cambridge, Massachusetts 02138 (United States); Naval Research Laboratory, Washington, D.C. 20375 (United States); Kennedy, T. A.; Efros, Al. L. [Naval Research Laboratory, Washington, D.C. 20375 (United States)

2010-11-15T23:59:59.000Z

262

Self-frequency summing in quantum dot photonic crystal nanocavity lasers  

SciTech Connect (OSTI)

We demonstrate self-frequency summing in photonic crystal nanocavity lasers with quantum dot gain. Two dipole modes and a hexapole mode, supported in the cavity, simultaneously showed lasing oscillation in the near infrared wavelength region under optical carrier injection. Meanwhile, within the same laser cavity, the internally generated three laser fields are up-converted to exhibit sharp visible emission lines via intra-cavity nonlinear frequency summing (and doubling) processes. This self-frequency summing process in active nanocavities will pave the way for developing nanoscale nonlinear optical light sources.

Ota, Yasutomo; Watanabe, Katsuyuki [Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)] [Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Iwamoto, Satoshi; Arakawa, Yasuhiko [Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan) [Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan)

2013-12-09T23:59:59.000Z

263

SiGe quantum dots for fast hole spin Rabi oscillations  

SciTech Connect (OSTI)

We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations, we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100?MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the g-tensor modulation technique.

Ares, N.; Prager, A.; De Franceschi, S. [SPSMS/LaTEQS, CEA-INAC/UJF-Grenoble 1, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France)] [SPSMS/LaTEQS, CEA-INAC/UJF-Grenoble 1, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France); Katsaros, G. [SPSMS/LaTEQS, CEA-INAC/UJF-Grenoble 1, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France) [SPSMS/LaTEQS, CEA-INAC/UJF-Grenoble 1, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France); Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Johannes Kepler University, Institute of Semiconductor and Solid State Physics, Altenbergerstr. 69, 4040 Linz (Austria); Golovach, V. N. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Centro de Física de Materiales CFM/MPC (CSIC-UPV/EHU) and Donostia International Physics Center DIPC, E-20018 San Sebastián (Spain); IKERBASQUE, Basque Foundation for Science, E-48011 Bilbao (Spain); Zhang, J. J. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany)] [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Glazman, L. I. [Department of Physics, Yale University, New Haven, Connecticut 06520 (United States)] [Department of Physics, Yale University, New Haven, Connecticut 06520 (United States); Schmidt, O. G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Center for Advancing Electronics Dresden, TU Dresden (Germany)

2013-12-23T23:59:59.000Z

264

Maximal tripartite entanglement between singlet-triplet qubits in quantum dots  

E-Print Network [OSTI]

Singlet-triplet states in double quantum dots are promising realizations of qubits, and capacitive coupling can be used to create entanglement between these qubits. We propose an entangling three-qubit gate of singlet-triplet qubits in a triangular setup. Our simulations using a realistic microscopic model show that a maximally entangled Greenberger-Horne-Zeilinger state can be generated as the qubits are evolved under exchange. Furthermore, our analysis for the gate operation can be used to extract the actual experimental pulse sequence needed to realize this.

Tuukka Hiltunen; Ari Harju

2013-10-24T23:59:59.000Z

265

High performance continuous wave 1.3??m quantum dot lasers on silicon  

SciTech Connect (OSTI)

We demonstrate record performance 1.3??m InAs quantum dot lasers grown on silicon by molecular beam epitaxy. Ridge waveguide lasers fabricated from the as-grown material achieve room temperature continuous wave thresholds as low as 16?mA, output powers exceeding 176 mW, and lasing up to 119?°C. P-modulation doping of the active region improves T{sub 0} to the range of 100–200?K while maintaining low thresholds and high output powers. Device yield is presented showing repeatable performance across different dies and wafers.

Liu, Alan Y., E-mail: ayliu01@engineering.ucsb.edu; Norman, Justin [Materials Department, University of California Santa Barbara, California 93106 (United States); Zhang, Chong [Department of Electrical and Computer Engineering, University of California Santa Barbara, California 93106 (United States); Snyder, Andrew; Lubyshev, Dmitri; Fastenau, Joel M.; Liu, Amy W. K. [IQE, Inc., Bethlehem, Pennsylvania 18015 (United States); Gossard, Arthur C.; Bowers, John E. [Materials Department, University of California Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California Santa Barbara, California 93106 (United States)

2014-01-27T23:59:59.000Z

266

Solution-processed high-performance colloidal quantum dot tandem photodetectors on flexible substrates  

SciTech Connect (OSTI)

We report a high-performance colloidal quantum dot (CQD)-based near-infrared tandem photodetector fabricated on flexible substrates via solution-processed method. The tandem photodetector on poly(ethylene terephthalate) substrates exhibited low dark current and high detectivities over ?8.8?×?10{sup 11} Jones at near infrared range at ?0.5?V bias and over ?10{sup 13} Jones near 0 bias. The critical bend radii of ?8?mm and ?3?mm have been demonstrated for tensile and compressive bending, respectively. The performance of photodetectors remains stable under mechanical stress, making PbSe CQD material a promise candidate for flexible infrared sensing applications.

Jiang, Zhenyu; You, Guanjun; Wang, Li; Liu, Jie; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Hu, Wenjia [China Tianchen Engineering Corporation, Tianjin 300400 (China); Zhang, Yu [State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China)

2014-08-28T23:59:59.000Z

267

On-chip single photon sources based on quantum dots in photonic crystal structures  

E-Print Network [OSTI]

of this dissertation have appeared or will appear in form of the following journal articles and contributed talks at international conferences. Articles A. Schwagmann, S. Kalliakos, I. Farrer, J. P. Griffiths, G. A. C. Jones, D. A. Ritchie, and A. J. Shields. “On... -chip single photon emission from an integrated semiconductor quantum dot into a photonic crystal waveguide.” Applied Physics Letters 99, 261108 (2011). A. Schwagmann, S. Kalliakos, D. J. P. Ellis, I. Farrer, J. P. Griffiths, G. A. C. Jones, D. A. Ritchie...

Schwagmann, Andre

2013-02-05T23:59:59.000Z

268

Fabrication and characterization of p-channel Si double quantum dots  

SciTech Connect (OSTI)

Lithographically defined p-channel Si single hole transistors (SHTs) and double quantum dot (DQD) devices are fabricated and characterized. Coulomb oscillations are clearly evident at a temperature of 4.2?K. The charging energy and the diameter of the SHT are estimated from the Coulomb diamonds. Honeycomb-like charge stability diagrams are observed from measurements of the DQD devices. Single hole transitions through the DQD are detected using an integrated SHT as a charge sensor, and a few-hole regime of the DQD is observed.

Yamada, Ko; Kambara, Tomohiro; Oda, Shunri [Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552 (Japan); Kodera, Tetsuo, E-mail: kodera.t.ac@m.titech.ac.jp [Department of Physical Electronics, Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552 (Japan); PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan)

2014-09-15T23:59:59.000Z

269

Effect of internal electric field on InAs/GaAs quantum dot solar cells  

SciTech Connect (OSTI)

We studied time-resolved carrier recombination in InAs/GaAs quantum dot (QD) solar cells. The electric field in a p-i-n diode structure spatially separates photoexcited carriers in QDs, strongly affecting the conversion efficiency of intermediate-band solar cells. The radiative decay lifetime is dramatically reduced in a strong electric field (193?kV/cm) by efficient recombination due to strong carrier localization in each QD and significant tunneling-assisted electron escape. Conversely, an electric field of the order of 10?kV/cm maintains electronic coupling in the stacked QDs and diminishes tunneling-assisted electron escape.

Kasamatsu, Naofumi; Kada, Tomoyuki; Hasegawa, Aiko; Harada, Yukihiro; Kita, Takashi [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan)

2014-02-28T23:59:59.000Z

270

Site control technique for quantum dots using electron beam induced deposition  

SciTech Connect (OSTI)

To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028?m at 50K by photoluminescence measurement.

Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi [Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Minami-saitama, Saitama 3458501 (Japan)

2014-05-15T23:59:59.000Z

271

Direct Patterning of CdSe Quantum Dots into Sub-100 nm Structures  

SciTech Connect (OSTI)

Ordered, two-dimensional cadmium selenide (CdSe) arrays have been fabricated on indium-doped tin oxide (ITO) electrodes using the pattern replication in nonwetting templates (PRINT) process. CdSe quantum dots (QDs) with an average diameter of 2.7 nm and a pyridine surface ligand were used for patterning. The PRINT technique utilizes a perfluoropolyether (PFPE) elastomeric mold that is tolerant of most organic solvents, thus allowing solutions of CdSe QDs in 4-picoline to be used for patterning without significant deformation of the mold. Nanometer-scale diffraction gratings have been successfully replicated with CdSe QDs.

Hampton, Meredith J.; Templeton, Joseph L.; DeSimone, Joseph M.

2010-01-01T23:59:59.000Z

272

Quantum Dot Tracers for Use in Engineered Geothermal | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustion | Department ofT ib l L dDepartment of EnergyQualifiedQualityTransfer ofQuantum Dot

273

Liquid-phase plasma synthesis of silicon quantum dots embedded in carbon matrix for lithium battery anodes  

SciTech Connect (OSTI)

Graphical abstract: - Highlights: • Silicon quantum dots embedded in carbon matrix (SiQDs/C) were fabricated. • SiQDs/C exhibits excellent battery performance as anode materials with high specific capacity. • The good performance was attributed to the marriage of small sized SiQDs and carbon. - Abstract: Silicon quantum dots embedded in carbon matrix (SiQDs/C) nanocomposites were prepared by a novel liquid-phase plasma assisted synthetic process. The SiQDs/C nanocomposites were demonstrated to show high specific capacity, good cycling life and high coulmbic efficiency as anode materials for lithium-ion battery.

Wei, Ying [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China); College of Chemistry and Chemical Engineering, Bohai University, Jinzhou 121000 (China); Yu, Hang; Li, Haitao; Ming, Hai; Pan, Keming; Huang, Hui [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China); Liu, Yang, E-mail: yangl@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China); Kang, Zhenhui, E-mail: zhkang@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China)

2013-10-15T23:59:59.000Z

274

Edge states in graphene quantum dots: Fractional quantum Hall effect analogies and differences at zero magnetic field  

E-Print Network [OSTI]

We investigate the way that the degenerate manifold of midgap edge states in quasicircular graphene quantum dots with zig-zag boundaries supports, under free-magnetic-field conditions, strongly correlated many-body behavior analogous to the fractional quantum Hall effect (FQHE), familiar from the case of semiconductor heterostructures in high magnetic fields. Systematic exact-diagonalization (EXD) numerical studies are presented for the first time for 5 graphene REMs exhibit in all instances a single (0,N) polygonal-ring molecular (crystalline) structure, with all the electrons localized on the edge. Disruptions in the zig-zag boundary condition along the circular edge act effectively as impurities that pin the electron molecule, yielding single-particle densities with broken rotational symmetry that portray directly the azimuthal localization of the edge electrons.

Igor Romanovsky; Constantine Yannouleas; Uzi Landman

2009-01-15T23:59:59.000Z

275

Optical properties of fluorescent zigzag graphene quantum dots derived from multi-walled carbon nanotubes  

SciTech Connect (OSTI)

Graphene quantum dots (GQDs), which are edge-bound nanometer-size graphene pieces, have fascinating electronic and optical properties due to their quantum confinement and edge effect. In this paper, GQDs were synthesized by using acid treatment and chemical exfoliation of multi-walled carbon nanotubes (MWCNTs). The structure of the GQDs was investigated by transmission electron microscope. The GQDs have a uniform size distribution, zigzag edge structure and two-dimensional morphology. The results indicated that the GQDs have bright blue emission upon UV excitation. The highly fluorescent GQDs exhibited high water solubility and good stability. It is shown that the acid treatment of MWCNTs leads to the formation of the functional group in zigzag sites, which results in the pH-dependent fluorescence of the GQDs.

Chen, Wei; Li, Fushan, E-mail: fushanli@hotmail.com; Wu, Chaoxing; Guo, Tailiang [Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350002 (China)

2014-02-10T23:59:59.000Z

276

InAs/GaAs p-type quantum dot infrared photodetector with higher efficiency  

SciTech Connect (OSTI)

An InAs/GaAs quantum dot infrared photodetector (QDIP) based on p-type valence-band intersublevel hole transitions as opposed to conventional electron transitions is reported. Two response bands observed at 1.5–3 and 3–10??m are due to transitions from the heavy-hole to spin-orbit split-off QD level and from the heavy-hole to heavy-hole level, respectively. Without employing optimized structures (e.g., the dark current blocking layer), the demonstrated QDIP displays promising characteristics, including a specific detectivity of 1.8×10{sup 9} cm·Hz{sup 1/2}/W and a quantum efficiency of 17%, which is about 5% higher than that of present n-type QDIPs. This study shows the promise of utilizing hole transitions for developing QDIPs.

Lao, Yan-Feng; Wolde, Seyoum; Unil Perera, A. G., E-mail: uperera@gsu.edu [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States); Zhang, Y. H.; Wang, T. M.; Liu, H. C. [Key Laboratory of Artificial Structures and Quantum Control, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China)] [Key Laboratory of Artificial Structures and Quantum Control, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Kim, J. O.; Schuler-Sandy, Ted; Tian, Zhao-Bing; Krishna, S. S. [Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States)] [Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States)

2013-12-09T23:59:59.000Z

277

Multiple time scale blinking in InAs quantum dot single-photon sources  

E-Print Network [OSTI]

We use photon correlation measurements to study blinking in single, epitaxially-grown self-assembled InAs quantum dots situated in circular Bragg grating and microdisk cavities. The normalized second-order correlation function g(2)(\\tau) is studied across eleven orders of magnitude in time, and shows signatures of blinking over timescales ranging from tens of nanoseconds to tens of milliseconds. The g(2)(\\tau) data is fit to a multi-level system rate equation model that includes multiple non-radiating (dark) states, from which radiative quantum yields significantly less than 1 are obtained. This behavior is observed even in situations for which a direct histogramming analysis of the emission time-trace data produces inconclusive results.

Marcelo Davanco; C. Stephen Hellberg; Serkan Ates; Antonio Badolato; Kartik Srinivasan

2014-04-21T23:59:59.000Z

278

Epitaxial lift-off of quantum dot enhanced GaAs single junction solar cells  

SciTech Connect (OSTI)

InAs/GaAs strain-balanced quantum dot (QD) n-i-p solar cells were fabricated by epitaxial lift-off (ELO), creating thin and flexible devices that exhibit an enhanced sub-GaAs bandgap current collection extending into the near infrared. Materials and optical analysis indicates that QD quality after ELO processing is preserved, which is supported by transmission electron microscopy images of the QD superlattice post-ELO. Spectral responsivity measurements depict a broadband resonant cavity enhancement past the GaAs bandedge, which is due to the thinning of the device. Integrated external quantum efficiency shows a QD contribution to the short circuit current density of 0.23?mA/cm{sup 2}.

Bennett, Mitchell F.; Bittner, Zachary S.; Forbes, David V.; Hubbard, Seth M., E-mail: smhsps@rit.edu [Rochester Institute of Technology, Rochester, New York 14623 (United States); Rao Tatavarti, Sudersena; Wibowo, Andree; Pan, Noren; Chern, Kevin [MicroLink Devices, Inc., Niles, Illinois 60714 (United States)] [MicroLink Devices, Inc., Niles, Illinois 60714 (United States); Phillip Ahrenkiel, S. [South Dakota School of Mines and Technology, Rapid City, South Dakota 57701 (United States)] [South Dakota School of Mines and Technology, Rapid City, South Dakota 57701 (United States)

2013-11-18T23:59:59.000Z

279

Light-assisted recharging of graphene quantum dots in fluorographene matrix  

SciTech Connect (OSTI)

In the present study, the charge transient spectroscopy was used to analyze the transient relaxation of charges in graphene and bilayer-graphene quantum dot (QD) systems formed by chemical functionalization of graphene and few-layer graphene layers. A set of activation energies (one to three different values) for the emission of charges from QDs sized 50 to 70?nm, most likely proceeding via the thermal activation of charge carriers from QD quantum confinement levels, were deduced from measurements performed in the dark. Daylight illumination of samples during measurements was found to result in a strong decrease of the activation energies and in an involvement of an athermal process in the charge relaxation phenomenon. The time of the light-assisted emission of charge carriers from QDs proved to be two to four orders of magnitude shorter than the time of their emission from QDs under no-illumination conditions.

Antonova, I. V. [A.V. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Acad. Lavrentiev Avenue 13, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Pirogov Street 2, Novosibirsk 630090 (Russian Federation); Nebogatikova, N. A.; Prinz, V. Ya. [A.V. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Acad. Lavrentiev Avenue 13, Novosibirsk 630090 (Russian Federation); Popov, V. I.; Smagulova, S. A. [North - East Federal University, Yakutsk (Russian Federation)

2014-10-07T23:59:59.000Z

280

Simultaneous Wavelength Translation and Amplitude Modulation of Single Photons from a Quantum Dot  

E-Print Network [OSTI]

Hybrid quantum information devices that combine disparate physical systems interacting through photons offer the promise of combining low-loss telecommunications wavelength transmission with high fidelity visible wavelength storage and manipulation. The realization of such systems requires control over the waveform of single photons to achieve spectral and temporal matching. Here, we experimentally demonstrate the simultaneous wavelength translation and amplitude modulation of single photons generated by a quantum dot emitting near 1300 nm with an exponentially-decaying waveform (lifetime $\\approx$1.5 ns). Quasi-phase-matched sum-frequency generation with a pulsed 1550 nm laser creates single photons at 710 nm with a controlled amplitude modulation at 350 ps timescales.

Matthew T. Rakher; Lijun Ma; Marcelo Davanco; Oliver Slattery; Xiao Tang; Kartik Srinivasan

2011-08-19T23:59:59.000Z

Note: This page contains sample records for the topic "determination quantum dot" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Quantum Dot Light Enhancement Substrate for OLED Solid-State Lighting  

SciTech Connect (OSTI)

With DOE Award No. DE-EE00000628, QD Vision developed and demonstrated a cost-competitive solution for increasing the light extraction efficiency of OLEDs with efficient and stable color rendering index (CRI) for solid state lighting (SSL). Solution processable quantum dot (QD) films were integrated into OLED ITO-glass substrates to generate tunable white emission from blue emitting OLED) devices as well as outcouple light from the ITO film. This QD light-enhancement substrate (QD-LED) technology demonstrated a 60% increase in OLED forward light out-coupling, a value which increases to 76% when considering total increase in multi-directional light output. The objective for the first year was an 80% increase in light output. This project seeks to develop and demonstrate a cost-competitive solution for realizing increased extraction efficiency organic light emitting devices (OLEDs) with efficient and stable color rendering index (CRI) for SSL. Solution processible quantum dot (QD) films will be utilized to generate tunable white emission from blue emitting phosphorescent OLED (Ph-OLED) devices.

James Perkins; Matthew Stevenson; Gagan Mahan; Seth Coe-Sullivan; Peter Kazlas

2011-01-21T23:59:59.000Z

282

Effect of Ligands on Characteristics of (CdSe)13 Quantum Dot  

SciTech Connect (OSTI)

The widespread applications of quantum dots (QDs) have spurred an increasing interest in the study of their coating ligands, which can not only protect the electronic structures of the central QDs, but also control their permeability through biological membranes with both size and shape. In this work, we have used density functional theory (DFT) to investigate the electronic structures of (CdSe)13 passivated by OPMe2(CH2)nMe ligands with different lengths and various numbers of branches (Me=methyl group, n = 0, 1-3). Our results show that the absorption peak in the ultraviolet-visible (UV-vis) spectra displays a clear blue-shift, on the scale of ~100 nm, upon the binding of ligands. Once the total number of ligands bound with (CdSe)13 reached a saturated number (9 or 10), no more blue-shift occurred in the absorption peak in the UV-vis spectra. On the other hand, the aliphatic chain length of ligands has a negligible effect on the optical properties of the QD core. Analyses of the bonding characteristics confirm that optical transitions are dominantly governed by the central QD core rather than the organic passivation. Interestingly, the density of states (DOS) share similar characteristics as vibrational spectra, even though there is no coordination vibration mode between the ligands and the central QD. These findings might provide insights on the material design for the passivation of quantum dots for biomedical applications.

Gao, Yang; Zhou, Bo; Kang, Seung-gu; Xin, Minsi; Yang, Ping; Dai, Xing; Wang, Zhigang; Zhou, Ruhong

2014-01-01T23:59:59.000Z

283

Revolutionary Method for Increasing the Efficiency of White Light Quantum Dot LEDs  

SciTech Connect (OSTI)

Covering a light-emitting diode (LED) with quantum dots (QDs) can produce a broad spectrum of white light. However, current techniques for applying QDs to LEDs suffer from a high density of defects and a non-uniform distribution of QDs, which respec-tively diminish the efficiency and quality of emitted light. Oak Ridge National Laboratory (ORNL) has the unique capability to thermally anneal QD structures at extremely high power densities for very short durations. This process, called pulse thermal proc-essing (PTP), reduces the number of point defects while main-taining the size and shape of the original QD nanostructure. Therefore, the efficiency of the QD wavelength conversion layer is improved without altering the emission spectrum defined by the size distribution of the quantum dot nanoparticles. The cur-rent research uses a thermal model to predict annealing tempera-tures during PTP and demonstrates up to a 300% increase in pho-toluminescence for QDs on passive substrates

Duty, Chad E [ORNL; Bennett, Charlee J C [ORNL; Sabau, Adrian S [ORNL; Jellison Jr, Gerald Earle [ORNL; Boudreaux, Philip R [ORNL; Walker, Steven C [ORNL; Ott, Ronald D [ORNL

2011-01-01T23:59:59.000Z

284

Theory of Linear Optical Absorption in Diamond Shaped Graphene Quantum Dots  

E-Print Network [OSTI]

In this paper, optical and electronic properties of diamond shaped graphene quantum dots (DQDs) have been studied by employing large-scale electron-correlated calculations. The computations have been performed using the $\\pi$-electron Pariser-Parr-Pople model Hamiltonian, which incorporates long-range Coulomb interactions. The influence of electron-correlation effects on the ground and excited states has been included by means of the configuration-interaction approach, used at various levels. Our calculations have revealed that the absorption spectra are red-shifted with the increasing sizes of quantum dots. It has been observed that the first peak of the linear optical absorption, which represents the optical gap, is not the most intense peak. This result is in excellent agreement with the experimental data, but in stark contrast to the predictions of the tight-binding model, according to which the first peak is the most intense peak, pointing to the importance of electron-correlation effects. Furthermore, a...

Basak, Tista; Shukla, Alok

2015-01-01T23:59:59.000Z

285

Elastic fields of quantum dots in subsurface layers A. E. Romanov  

E-Print Network [OSTI]

to vertical stacking of dots provided that the thickness of the intervening layer ``spacer layer'' is in the order or thinner than the lateral dimensions of the dot.4 It is now clear that dot ordering is driven

Beltz, Glenn E.

286

High efficiency photodetectors fabricated by electrostatic layer-by-layer self-assembly of CdTe quantum dots  

E-Print Network [OSTI]

High efficiency photodetectors fabricated by electrostatic layer-by-layer self-assembly of CdTe 20 October 2008 We demonstrate high-performance photodetectors from multilayers of CdTe quantum dots. The synthesis of CdTe QDs in aqueous solution using cadmium perchlorate hydrate and Al2Te3 was previously re

Lin, Lih Y.

287

InAs(ZnCdS) Quantum Dots Optimized for Biological Imaging in the Near-Infrared  

E-Print Network [OSTI]

We present the synthesis of InAs quantum dots (QDs) with a ZnCdS shell with bright and stable emission in the near-infrared (NIR, 700?900 nm) region for biological imaging applications. We demonstrate how NIR QDs can image ...

Allen, Peter M.

288

Reversible Modification of CdSe-CdS/ZnS Quantum Dot Fluorescence by Surrounding Ca2+  

E-Print Network [OSTI]

Reversible Modification of CdSe-CdS/ZnS Quantum Dot Fluorescence by Surrounding Ca2+ Ions Li Li (3-MPA) coated CdSe-CdS/ZnS core-multishell QDs when free Ca2+ ions were added to and subsequently removed from the QD solution. It was found that QD fluorescence intensity was reduced when Ca2+ ions were

Haviland, David

289

Phonon-hopping thermal conduction in quantum dot superlattices Manu Shamsa, Weili Liu, and Alexander A. Balandina  

E-Print Network [OSTI]

or polycrystalline materials in terms of thermal transport. © 2005 American Institute of Physics. DOI: 10 strongly depends on interface conditions, is considered as a major thermal resistive mecha- nismPhonon-hopping thermal conduction in quantum dot superlattices Manu Shamsa, Weili Liu

290

Green route synthesis of high quality CdSe quantum dots for applications in light emitting devices  

SciTech Connect (OSTI)

Investigation was made on light emitting diodes fabricated using CdSe quantum dots. CdSe quantum dots were synthesized chemically using olive oil as the capping agent, instead of toxic phosphine. Room temperature photoluminescence investigation showed sharp 1st excitonic emission peak at 568 nm. Bi-layer organic/inorganic (P3HT/CdSe) hybrid light emitting devices were fabricated by solution process. The electroluminescence study showed low turn on voltage ({approx}2.2 V) .The EL peak intensity was found to increase by increasing the operating current. - Graphical abstract: Light emitting diode was fabricated using CdSe quantum dots using olive oil as the capping agent, instead of toxic phosphine. Bi-layer organic/inorganic (P3HT/CdSe) hybrid light emitting device shows strong electroluminescence in the range 630-661 nm. Highlights: Black-Right-Pointing-Pointer CdSe Quantum dots were synthesized using olive oil as the capping agent. Black-Right-Pointing-Pointer Light emitting device was fabricated using CdSe QDs/P3HT polymer heterojunction. Black-Right-Pointing-Pointer The I-V characteristics study showed low turn on voltage at {approx}2.2 V. Black-Right-Pointing-Pointer The EL peak intensity increases with increasing the operating current.

Bera, Susnata, E-mail: susnata.bera@gmail.com [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India); Singh, Shashi B. [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India); Ray, S.K., E-mail: physkr@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)

2012-05-15T23:59:59.000Z

291

Long-time electron spin storage via dynamical suppression of hyperfine-induced decoherence in a quantum dot  

E-Print Network [OSTI]

by the nuclear spin environment in a quantum dot can be substantially increased by subjecting the electron and characterized. The impact of system and control nonidealities is also assessed, including the effect.125336 PACS number s : 03.67.Pp, 03.65.Yz, 75.10.Jm, 02.60.Cb I. INTRODUCTION Electron and nuclear spin

292

PHYSICAL REVIEW B 83, 155302 (2011) Size dependence of carrier dynamics and carrier multiplication in PbS quantum dots  

E-Print Network [OSTI]

in semiconductor QDs and its potential implications on highly efficient solar energy conversion. Nevertheless, many and carrier-multiplication efficiencies in PbS quantum dots (QDs) are investigated. In particular, we report that the carrier-multiplication energy efficiency increases with decreasing QD size. By comparing to theoretical

Van Stryland, Eric

293

Adiabatic many-body state preparation and information transfer in quantum dot arrays  

E-Print Network [OSTI]

Quantum simulation of many-body systems are one of the most interesting tasks of quantum technology. Among them is the preparation of a many-body system in its ground state when the vanishing energy gap makes the cooling mechanisms ineffective. Adiabatic theorem, as an alternative to cooling, can be exploited for driving the many-body system to its ground state. In this paper, we study two most common disorders in quantum dot arrays, namely exchange coupling fluctuations and hyperfine interaction, in adiabatically preparation of ground state in such systems. We show that the adiabatic ground state preparation is highly robust against those disorder effects making it good analog simulator. Moreover, we also study the adiabatic classical information transfer, using singlet-triplet states, across a spin chain. In contrast to ground state preparation the transfer mechanism is highly affected by disorder and in particular, the hyperfine interaction is very destructive for the performance. This suggests that for communication tasks across such arrays adiabatic evolution is not as effective and quantum quenches could be preferable.

Umer Farooq; Abolfazl Bayat; Stefano Mancini; Sougato Bose

2014-11-05T23:59:59.000Z

294

Study of the growth mechanisms of GaN/(Al, Ga)N quantum dots: Correlation between structural and optical properties  

SciTech Connect (OSTI)

The ammonia-based molecular beam epitaxy of GaN/(Al, Ga)N quantum dots is investigated using reflection high-energy electron diffraction, atomic force microscopy, transmission electron microscopy and photoluminescence. The main steps of the formation kinetics are identified and the influence of diffusion and evaporation processes on both the quantum dot and the wetting layer morphology is addressed. The correlation between the optical and structural properties of such structures finally allows for the analysis of matter exchanges between the quantum dots and the wetting layer during capping.

Sergent, S. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Universite de Nice Sophia Antipolis, Parc Valrose, F-06102 Nice Cedex 2 (France); Damilano, B.; Huault, T.; Brault, J.; Tottereau, O.; Vennegues, P.; Leroux, M.; Semond, F.; Massies, J. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Korytov, M.

2011-03-01T23:59:59.000Z

295

IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 47, NO. 1, JANUARY 2011 31 All-Optical Switch Using Quantum-Dot Saturable  

E-Print Network [OSTI]

energy consumption of 3.91 fJ per bit are possible. Index Terms--Optical switches, quantum-dot. I to route data, which imposes limitations on transmission speed and power consumption. Methods for all of optical switching devices has been a subject of some debate. All-optical switching energies

Waks, Edo

296

Study of valence-band intersublevel transitions in InAs/GaAs quantum dots-in-well infrared photodetectors  

SciTech Connect (OSTI)

The n-type quantum dot (QD) and dots-in-well (DWELL) infrared photodetectors, in general, display bias-dependent multiple-band response as a result of optical transitions between different quantum levels. Here, we present a unique characteristic of the p-type hole response, a well-preserved spectral profile, due to the much reduced tunneling probability of holes compared to electrons. This feature remains in a DWELL detector, with the dominant transition contributing to the response occurring between the QD ground state and the quantum-well states. The bias-independent response will benefit applications where single-color detection is desired and also allows achieving optimum performance by optimizing the bias.

Lao, Yan-Feng; Wolde, Seyoum; Unil Perera, A. G., E-mail: uperera@gsu.edu [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States); Zhang, Y. H.; Wang, T. M. [Key Laboratory of Artificial Structures and Quantum Control, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Kim, J. O.; Schuler-Sandy, Ted; Tian, Zhao-Bing; Krishna, S. S. [Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States)

2014-04-28T23:59:59.000Z

297

Lagrange mesh and exact diagonalization for numerical study of semiconductor quantum dot systems with application in singlet-triplet qubits  

E-Print Network [OSTI]

We present a highly flexible computational scheme for studying correlated electrons confined by an arbitrary external potential in two-dimensional semiconductor quantum dots. The method starts by a Lagrange mesh calculation for the single-particle states, followed by the calculation of the Coulomb interaction matrix elements between these, and combining both in the exact diagonalization of the many-body Hamiltonian. We apply the method in simulation of double quantum dot singlet-triplet qubits. We simulate the full quantum control and dynamics of one singlet-triplet qubit. We also use our method to provide an exact diagonalization based first-principles model for studying two singlet-triplet qubits and their capacitative coupling via the long-distance Coulomb interaction.

Tuukka Hiltunen; Juha Ritala; Oona Kupiainen; Topi Siro; Ari Harju

2013-01-28T23:59:59.000Z

298

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect (OSTI)

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

299

Semiconductor quantum dots with light-hole exciton ground state: fabrication and fine structure  

E-Print Network [OSTI]

Quantum dots (QDs) can act as convenient hosts of two-level quantum szstems, such as single electron spins, hole spins or excitons (bound electron-hole pairs). Due to quantum confinement, the ground state of a single hole confined in a QD usually has dominant heavy-hole (HH) character. For this reason light-hole (LH) states have been largely neglected, despite the fact that may enable the realilzation of coherent photon-to-spin converters or allow for faster spin manipulation compared to HH states. In this work, we use tensile strains larger than 0.3% to switch the ground state of excitons confined in high quality GaAs/AlGaAs QDs from the conventional HH- to LH-type. The LH-exciton fine structure is characterized by two in-plane-polarized lines and, ~400 micro-eV above them, by an additional line with pronounced out-of-plane oscillator strength, consistent with theoretical predictions based on atomistic empirical pseudopotential calculations and a simple mesoscopic model.

Y. H. Huo; B. J. Witek; S. Kumar; R. Singh; E. Zallo; R. Grifone; D. Kriegner; R. Trotta; N. Akopian; J. Stangl; V. Zwiller; G. Bester; A. Rastelli; O. G. Schmidt

2012-08-31T23:59:59.000Z

300

Composite materials with metal oxide attached to lead chalcogenide nanocrystal quantum dots with linkers  

DOE Patents [OSTI]

Composite materials useful for devices such as photoelectrochemical solar cells include a substrate, a metal oxide film on the substrate, nanocrystalline quantum dots (NQDs) of lead sulfide, lead selenide, and lead telluride, and linkers that attach the NQDs to the metal oxide film. Suitable linkers preserve the 1s absorption peak of the NQDs. A suitable linker has a general structure A-B-C where A is a chemical group adapted for binding to a MO.sub.x and C is a chemical group adapted for binding to a NQD and B is a divalent, rigid, or semi-rigid organic spacer moiety. Other linkers that preserve the 1s absorption peak may also be used.

Fuke, Nobuhiro; Koposov, Alexey Y; Sykora, Milan; Hoch, Laura

2014-12-16T23:59:59.000Z

Note: This page contains sample records for the topic "determination quantum dot" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Fabrication of fluorescent composite with ultrafast aqueous synthesized high luminescent CdTe quantum dots  

SciTech Connect (OSTI)

Without precursor preparation, inert gas protection and enormous amount of additives and reductants, CdTe quantum dots (QDs) can be rapidly synthesized with high quality. A 600 nm photoluminescence peak wavelength could be obtained within 1 hour's refluxing through minimal addition of 1,2-diaminoethane (DAE). The theoretical design for the experiments are illustrated and further proved by the characterization results with different concentrations and reagents. On the other hand, generation of CdTe QDs was found even under room temperature by applying droplet quantity of DAE. This indicates that QDs can be synthesized with simply a bottle and no enormous additives required. The QDs were mixed into the epoxy matrix through solution casting method with cetyltrimethylammonium (CTA) capping for phase transfer. The acquired epoxy based nanocomposite exhibits good transparency, compatibility and fluorescence.

Zhang, Lei, E-mail: mejswu@ust.hk; Chen, Haibin, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk; Wu, Jingshen, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk [Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Hong Kong and Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong); Bi, Xianghong, E-mail: takubatch@gmail.com [Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong)

2014-05-15T23:59:59.000Z

302

Growth and optical properties of CdTe quantum dots in ZnTe nanowires  

SciTech Connect (OSTI)

We report on the formation of optically active CdTe quantum dots in ZnTe nanowires. The CdTe/ZnTe nanostructures have been grown by a gold nanocatalyst assisted molecular beam epitaxy in a vapor-liquid solid growth process. The presence of CdTe insertions in ZnTe nanowire results in the appearance of a strong photoluminescence band in the 2.0 eV-2.25 eV energy range. Spatially resolved photoluminescence measurements reveal that this broad emission consists of several sharp lines with the spectral width of about 2 meV. The large degree of linear polarization of these individual emission lines confirms their nanowire origin, whereas the zero-dimensional confinement is proved by photon correlation spectroscopy.

Wojnar, Piotr; Janik, Elzbieta; Baczewski, Lech T.; Kret, Slawomir; Karczewski, G.; Wojtowicz, Tomasz [Institute of Physics, Polish Academy of Sciences, Al Lotnikow 32/46, 02-668 Warsaw (Poland); Goryca, Mateusz; Kazimierczuk, Tomasz; Kossacki, Piotr [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland)

2011-09-12T23:59:59.000Z

303

Excitonic enhancement of nonradiative energy transfer to bulk silicon with the hybridization of cascaded quantum dots  

SciTech Connect (OSTI)

We report enhanced sensitization of silicon through nonradiative energy transfer (NRET) of the excitons in an energy-gradient structure composed of a cascaded bilayer of green- and red-emitting CdTe quantum dots (QDs) on bulk silicon. Here NRET dynamics were systematically investigated comparatively for the cascaded energy-gradient and mono-dispersed QD structures at room temperature. We show experimentally that NRET from the QD layer into silicon is enhanced by 40% in the case of an energy-gradient cascaded structure as compared to the mono-dispersed structures, which is in agreement with the theoretical analysis based on the excited state population-depopulation dynamics of the QDs.

Yeltik, Aydan; Guzelturk, Burak; Akhavan, Shahab [Department of Physics and Department of Electrical and Electronics Engineering, UNAM—Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800 (Turkey)] [Department of Physics and Department of Electrical and Electronics Engineering, UNAM—Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800 (Turkey); Ludwig Hernandez-Martinez, Pedro; Volkan Demir, Hilmi, E-mail: volkan@stanfordalumni.org [Department of Physics and Department of Electrical and Electronics Engineering, UNAM—Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800 (Turkey); Luminous Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering and School of Physical and Mathematical Sciences, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

2013-12-23T23:59:59.000Z

304

Periodic alignment of Si quantum dots on hafnium oxide coated single wall carbon nanotubes  

SciTech Connect (OSTI)

We demonstrate a bottom up approach for the aligned epitaxial growth of Si quantum dots (QDs) on one-dimensional (1D) hafnium oxide (HfO{sub 2}) ridges created by the growth of HfO{sub 2} thin film on single wall carbon nanotubes. This growth process creates a high strain 1D ridge on the HfO{sub 2} film, which favors the formation of Si seeds over the surrounding flat HfO{sub 2} area. Periodic alignment of Si QDs on the 1D HfO{sub 2} ridge was observed, which can be controlled by varying different growth conditions, such as growth temperature, growth time, and disilane flow rate.

Olmedo, Mario; Martinez-Morales, Alfredo A.; Ozkan, Mihrimah; Liu Jianlin [Department of Electrical Engineering, University of California, Riverside, California 92521 (United States); Liu Gang; Lau, C.N. [Department of Physics and Astronomy, University of California, Riverside, California 92521 (United States); Yengel, Emre; Ozkan, Cengiz S. [Department of Mechanical Engineering, University of California, Riverside, California 92521 (United States)

2009-03-23T23:59:59.000Z

305

Tuning the external optical feedback-sensitivity of a passively mode-locked quantum dot laser  

SciTech Connect (OSTI)

The external optical feedback-sensitivity of a two-section, passively mode-locked quantum dot laser operating at elevated temperature is experimentally investigated as a function of absorber bias voltage. Results show that the reverse-bias voltage on the absorber has a direct impact on the damping rate of the free-running relaxation oscillations of the optical signal output, thereby enabling interactive external control over the feedback-response of the device, even under the nearly resonant cavity configuration. The combination of high temperature operation and tunable feedback-sensitivity is highly promising from a technological standpoint, in particular, for applications requiring monolithic integration of multi-component architectures on a single chip in order to accomplish, for instance, the dual-objectives of stable pulse quality and isolation from parasitic reflections.

Raghunathan, R., E-mail: raghunat@vt.edu; Kovanis, V.; Lester, L. F. [Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, 302 Whittemore Hall, Blacksburg, Virginia 24061 (United States); Grillot, F. [Télécom ParisTech, Ecole Nationale Supérieure des Télécommunications, CNRS LTCI, 46 rue Barrault, 75634 Paris Cedex 13 (France); Mee, J. K.; Murrell, D. [Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)

2014-07-28T23:59:59.000Z

306

Optical and Electrical Measurement of Energy Transfer between Nanocrystalline Quantum Dots and Photosystem I  

SciTech Connect (OSTI)

In the natural photosynthesis process, light harvesting complexes (LHCs) absorb light and pass excitation energy to photosystem I (PSI) and photosystem II (PSII). In this study, we have used nanocrystalline quantum dots (NQDs) as an artificial LHC by integrating them with PSI to extend their spectral range. We have performed photoluminescence (PL) and ultrafast time-resolved absorption measurements to investigate this process. Our PL experiments showed that emission from the NQDs is quenched, and the fluorescence from PSI is enhanced. Transient absorption and bleaching results can be explained by fluorescence resonance energy transfer (FRET) from the NQDs to the PSI. This nonradiative energy transfer occurs in ?6 ps. Current?voltage (I?V) measurements on the composite NQD-PSI samples demonstrate a clear photoresponse.

Jung, H.; Gulis, G.; Gupta, S.; Redding, K.; Gosztola, D. J.; Wiederrecht, Gary P; Stroscio, M. A.; Dutta, M.

2010-01-01T23:59:59.000Z

307

A scheme comparison of Autler-Townes based slow light in inhomogeneously broadened quantum dot media  

E-Print Network [OSTI]

We propose a method to achieve significant optical signal delays exploiting the effect of Autler-Townes splitting in an inhomogeneously broadened quantum dot medium. The absorption and slow-down effects are compared for three schemes i.e. $\\Xi$, V and $\\Lambda$, corresponding to different excitation configurations. Qualitative differences of the V-scheme compared to the $\\Xi$- and $\\Lambda$-scheme are found, which show that features of Autler-Townes splitting are only revealed in the V-scheme. The underlying physical mechanisms causing this discrepancy are analyzed and discussed. Finally we compare field propagation calculations of the schemes showing significantly larger achievable signal delays for the V-scheme despite finite absorption of the coupling field. This opens the possibility for using waveguide structures for both coupling and probe fields, thus significantly increasing the achievable signal delays.

Per Lunnemann; Jesper Mørk

2010-08-23T23:59:59.000Z

308

High-performance controllable ambipolar infrared phototransistors based on graphene-quantum dot hybrid  

E-Print Network [OSTI]

The field effect transistors (FETs) exhibited ultrahigh responsivity (107 A/W) to infrared light with great improvement of mobility in graphene / PbS quantum dot (QD) hybrid. These reported transistors are either unipolar or depletion mode devices. In this paper, we presented and fabricated conveniently-controlled grapheme / PbS QD hybrid FETs. Through the investigation on electric and optoelectronic properties, the ambipolar FETs (normally OFF) can be switched ON by raising gate voltage (VG) up to 3.7 V and -0.8 V in the first and third quadrants. Near these thresholds (VT) each carrier species shows comparable mobility (~ 300 cm2V-1s-1). Photo-responsivity reach ~ 107 A/W near each threshold and it will linearly increases with (VG-VT). These hybrid FETs become strongly competitive candidates for devices in flexible integrated circuits with low cost, large area, low-energy consumption and high performances.

Wang, Ran; Wang, Haiyang; Song, Xiaoxian; Jin, Lufan; Dai, Haitao; Wu, Sen; Yao, Jianquan

2014-01-01T23:59:59.000Z

309

Controlling the Spontaneous Emission Rate of Single Quantum Dots in a 2D Photonic Crystal  

E-Print Network [OSTI]

We observe large spontaneous emission rate modification of individual InAs Quantum Dots (QDs) in 2D a photonic crystal with a modified, high-Q single defect cavity. Compared to QDs in bulk semiconductor, QDs that are resonant with the cavity show an emission rate increase by up to a factor of 8. In contrast, off-resonant QDs indicate up to five-fold rate quenching as the local density of optical states (LDOS) is diminished in the photonic crystal. In both cases we demonstrate photon antibunching, showing that the structure represents an on-demand single photon source with pulse duration from 210 ps to 8 ns. We explain the suppression of QD emission rate using Finite Difference Time Domain (FDTD) simulations and find good agreement with experiment.

Dirk Englund; David Fattal; Edo Waks; Glenn Solomon; Bingyang Zhang; Toshihiro Nakaoka; Yasuhiko Arakawa; Yoshihisa Yamamoto; Jelena Vuckovic

2005-04-20T23:59:59.000Z

310

Advanced method for increasing the efficiency of white light quantum dot LEDs  

SciTech Connect (OSTI)

Covering a light-emitting diode (LED) with quantum dots (QDs) can produce a broad spectrum of white light. However, current techniques for applying QDs to LEDs suffer from a high density of defects and a non-uniform distribution of QDs, which, respectively, diminish the efficiency and quality of emitted light. Oak Ridge National Laboratory (ORNL) has the unique capability to thermally anneal QD structures at extremely high power densities for very short durations. This process, called pulse thermal processing (PTP), reduces the number of point defects while maintaining the size and shape of the original QD nanostructure. Therefore, the efficiency of the QD wavelength conversion layer is improved without altering the emission spectrum defined by the size distribution of theQD nanoparticles. The current research uses a thermal model to predict annealing temperatures during PTP and demonstrates up to a 300% increase in photoluminescence for QDs on passive substrates.

Duty, Chad E [ORNL; Bennett, Charlee J C [ORNL; Sabau, Adrian S [ORNL; Jellison Jr, Gerald Earle [ORNL; Boudreaux, Philip R [ORNL; Walker, Steven C [ORNL; Ott, Ronald D [ORNL

2011-01-01T23:59:59.000Z

311

Suspending Effect on Low-Frequency Charge Noise in Graphene Quantum Dot  

E-Print Network [OSTI]

Charge noise is critical in the performance of gate-controlled quantum dots (QDs). Here we show the 1/f noise for a microscopic graphene QD is substantially larger than that for a macroscopic graphene field-effect transistor (FET), increasing linearly with temperature. To understand its origin, we suspended the graphene QD above the substrate. In contrast to large area graphene FETs, we find that a suspended graphene QD has an almost-identical noise level as an unsuspended one. Tracking noise levels around the Coulomb blockade peak as a function of gate voltage yields potential fluctuations of order 1 "{\\mu}eV", almost one order larger than in GaAs/GaAlAs QDs. Edge states rather than substrate-induced disorders, appear to dominate the 1/f noise, thus affecting the coherency of graphene nano-devices.

Xiang-Xiang Song; Hai-Ou Li; Jie You; Tian-Yi Han; Gang Cao; Tao Tu; Ming Xiao; Guang-Can Guo; Hong-Wen Jiang; Guo-Ping Guo

2014-06-16T23:59:59.000Z

312

Optimum phase noise reduction and repetition rate tuning in quantum-dot mode-locked lasers  

SciTech Connect (OSTI)

Competing approaches exist, which allow control of phase noise and frequency tuning in mode-locked lasers, but no judgement of pros and cons based on a comparative analysis was presented yet. Here, we compare results of hybrid mode-locking, hybrid mode-locking with optical injection seeding, and sideband optical injection seeding performed on the same quantum dot laser under identical bias conditions. We achieved the lowest integrated jitter of 121 fs and a record large radio-frequency (RF) tuning range of 342?MHz with sideband injection seeding of the passively mode-locked laser. The combination of hybrid mode-locking together with optical injection-locking resulted in 240 fs integrated jitter and a RF tuning range of 167?MHz. Using conventional hybrid mode-locking, the integrated jitter and the RF tuning range were 620 fs and 10?MHz, respectively.

Habruseva, T. [CAPPA, Cork Institute of Technology, Cork (Ireland); Tyndall National Institute, Lee Maltings, Cork (Ireland); Aston University, Aston Triangle, B4 7ET Birmingham (United Kingdom); Arsenijevi?, D.; Kleinert, M.; Bimberg, D. [Institut für Festkörperphysik, Technische Universität Berlin, Berlin (Germany); Huyet, G.; Hegarty, S. P. [CAPPA, Cork Institute of Technology, Cork (Ireland); Tyndall National Institute, Lee Maltings, Cork (Ireland)

2014-01-13T23:59:59.000Z

313

Charge tuning in [111] grown GaAs droplet quantum dots  

SciTech Connect (OSTI)

We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from ?3|e| to +2|e|. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T?=?4?K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25?meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions, a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields.

Bouet, L.; Vidal, M.; Marie, X.; Amand, T.; Wang, G.; Urbaszek, B. [INSA-CNRS-UPS, LPCNO, Université de Toulouse, 135 Ave. Rangueil, 31077 Toulouse (France); Mano, T.; Ha, N.; Kuroda, T.; Sakoda, K. [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Durnev, M. V.; Glazov, M. M.; Ivchenko, E. L. [Ioffe Physical-Technical Institute RAS, 194021 St.-Petersburg (Russian Federation)

2014-08-25T23:59:59.000Z

314

Wavelength-tunable colloidal quantum dot laser on ultra-thin flexible glass  

SciTech Connect (OSTI)

A mechanically flexible and wavelength-tunable laser with an ultra-thin glass membrane as substrate is demonstrated. The optically pumped hybrid device has a distributed feedback cavity that combines a colloidal quantum dot gain film with a grating-patterned polymeric underlayer, all on a 30-?m thick glass sheet. The total thickness of the structure is only 75??m. The hybrid laser has an average threshold fluence of 450?±?80??J/cm{sup 2} (for 5-ns excitation pulses) at an emitting wavelength of 607?nm. Mechanically bending the thin-glass substrate enables continuous tuning of the laser emission wavelength over an 18-nm range, from 600?nm to 618?nm. The correlation between the wavelength tunability and the mechanical properties of the thin laser structure is verified theoretically and experimentally.

Foucher, C.; Guilhabert, B.; Laurand, N.; Dawson, M. D. [Institute of Photonics, SUPA, University of Strathclyde, Glasgow (United Kingdom)

2014-04-07T23:59:59.000Z

315

Thin Film Solar Cells Derived from Sintered Semiconductor Quantum Dots: Cooperative Research and Development Final Report, CRADA number CRD-07-00226  

SciTech Connect (OSTI)

The NREL/Evident team will develop techniques to fabricate thin film solar cells where the absorption layers comprising the solar cells are derived from sintered semiconductor quantum dots.

Ginley, D. S.

2010-07-01T23:59:59.000Z

316

High-speed Properties of 1.55-micron-wavelength Quantum Dot Semiconductor Amplifiers and Comparison with Higher-Dimensional Structures.  

E-Print Network [OSTI]

??This thesis reports an experimental characterization of the ultrafast gain and refractive index dynamics of a novel InAs/InGaAsP/InP quantum-dot (QD) semiconductor optical amplifier (SOA) operating… (more)

Zilkie, Aaron John

2009-01-01T23:59:59.000Z

317

An electrically driven quantum dot-in-nanowire visible single photon source operating up to 150 K  

SciTech Connect (OSTI)

We demonstrate electrically pumped single photon emission up to 150 K from a single InGaN quantum dot embedded in a GaN nanowire junction diode. The InGaN dot-in-nanowire p-n junctions were grown on silicon by molecular beam epitaxy. The exciton electroluminescence from individual dot-in-nanowires is in the green spectral range (? ? 520 nm) and is detectable up to 150 K. Second order autocorrelation measurements performed at the exciton energy at an ambient temperature of 125 K show a background corrected g{sup (2)}(0) equal to 0.35, indicating dominant single photon emission. The steady state nanowire temperature under these conditions is estimated to be 150 K due to Joule heating induced by the large nanowire series resistance. Time resolved photoluminescence measurements yield an exciton radiative lifetime of 1.1 ns.

Deshpande, Saniya; Bhattacharya, Pallab [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)] [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2013-12-09T23:59:59.000Z

318

Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire  

SciTech Connect (OSTI)

We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2014-09-08T23:59:59.000Z

319

Mesoporous TiO2 beads for high efficiency CdS/ CdSe quantum dot co-sensitized solar cells  

E-Print Network [OSTI]

) as a derivative of dye-sensitized solar cells (DSCs) have attracted considerable attention and been regardedMesoporous TiO2 beads for high efficiency CdS/ CdSe quantum dot co-sensitized solar cells Ru Zhou for a CdS/CdSe quantum dot (QD) co-sensitized solar cell, which was constructed with the mesoporous TiO2

Cao, Guozhong

320

Carrier dynamics and activation energy of CdTe quantum dots in a Cd{sub x}Zn{sub 1-x}Te quantum well  

SciTech Connect (OSTI)

We investigate the optical properties of CdTe quantum dots (QDs) in a Cd{sub 0.3}Zn{sub 0.7}Te quantum well (QW) grown on GaAs (100) substrates. Carrier dynamics of CdTe/ZnTe QDs and quantum dots-in-a-well (DWELL) structure is studied using time-resolved photoluminescence (PL) measurements, which show the longer exciton lifetime of the DWELL structure. The activation energy of the electrons confined in the DWELL structure, as obtained from the temperature-dependent PL spectra, was also higher than that of electrons confined in the CdTe/ZnTe QDs. This behavior is attributed to the better capture of carriers into QDs within the surrounding QW.

Han, W. I.; Lee, J. H.; Yu, J. S.; Choi, J. C. [Department of Physics, Yonsei University, Wonju 220-710 (Korea, Republic of); Lee, H. S. [Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

2011-12-05T23:59:59.000Z

Note: This page contains sample records for the topic "determination quantum dot" from the National Library of EnergyBeta (NLEBeta).
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to obtain the most current and comprehensive results.


321

Photo-modulated thin film transistor based on dynamic charge transfer within quantum-dots-InGaZnO interface  

SciTech Connect (OSTI)

The temporal development of next-generation photo-induced transistor across semiconductor quantum dots and Zn-related oxide thin film is reported in this paper. Through the dynamic charge transfer in the interface between these two key components, the responsibility of photocurrent can be amplified for scales of times (?10{sup 4}?A/W 450?nm) by the electron injection from excited quantum dots to InGaZnO thin film. And this photo-transistor has a broader waveband (from ultraviolet to visible light) optical sensitivity compared with other Zn-related oxide photoelectric device. Moreover, persistent photoconductivity effect can be diminished in visible waveband which lead to a significant improvement in the device's relaxation time from visible illuminated to dark state due to the ultrafast quenching of quantum dots. With other inherent properties such as integrated circuit compatible, low off-state current and high external quantum efficiency resolution, it has a great potential in the photoelectric device application, such as photodetector, phototransistor, and sensor array.

Liu, Xiang [Electronic Science and Engineering School, Southeast University, Nanjing (China); National Center for Nanoscience and Technology, Beijing (China); Yang, Xiaoxia; Liu, Mingju [National Center for Nanoscience and Technology, Beijing (China); Tao, Zhi; Wei, Lei, E-mail: lw@seu.edu.cn; Li, Chi, E-mail: lichi@seu.edu.cn; Zhang, Xiaobing; Wang, Baoping [Electronic Science and Engineering School, Southeast University, Nanjing (China); Dai, Qing, E-mail: daiq@nanoctr.cn [National Center for Nanoscience and Technology, Beijing (China); London Center for Nanotechnology, University College London, London WC1H 0AH (United Kingdom); Nathan, Arokia [Electronic Science and Engineering School, Southeast University, Nanjing (China); London Center for Nanotechnology, University College London, London WC1H 0AH (United Kingdom)

2014-03-17T23:59:59.000Z

322

Photo-physical properties enhancement of bare and core-shell quantum dots  

SciTech Connect (OSTI)

Semiconductor nanocrystals (NCs) (also known as quantum dots, QDs) have attracted immense attention for their size-tunable optical properties that makes them impressive candidates for solar cells, light emitting devices, lasers, as well as biomedical imaging. However monodispersity, high and consistent photoluminescence, photostability, and biocompatibility are still major challenges. This work focuses on optimizing the photophysical properties and biocompatibility of QDs by forming core-shell nanostructures and their encapsulation by a carrier. Highly luminescent CdS and CdS-ZnS core-shell QDs with 5 nm sizes were synthesized using a facile approach based on pyrolysis of the single molecule precursors. After capping the CdS QDs with a thin layer of ZnS to reduce toxicity, the photoluminescence and photostability of the core-shell QDs was significantly enhanced. To make both the bare and core/shell structure QDs more resistant against photochemical reactions, a mesoporous silica layer was grown on the QDs through a reverse microemulsion technique based on hydrophobic interaction. This encapsulation enhanced the quantum yield and photostability compared to the bare QDs by providing much stronger resistance to oxidation and Oswald ripening of QDs. Encapsulation also improved biocompatibility of QDs that was evaluated with human umbilical vein endothelial cell lines (HUVEC)

Mumin, Md Abdul, E-mail: pcharpentier@eng.uwo.ca; Akhter, Kazi Farida, E-mail: pcharpentier@eng.uwo.ca; Charpentier, Paul A., E-mail: pcharpentier@eng.uwo.ca [Chemical and Biochemical Engineering, Western University, London Ontario (Canada)

2014-03-31T23:59:59.000Z

323

SU(4) Kondo Effect in Carbon Nanotube Quantum Dots: Kondo Effect without Charge Quantization  

E-Print Network [OSTI]

.J. Liang, M. Bockrath, and H. Park, PRL (2002) M. R. Buitelaar et al., PRL (2002) Quantization along length nanotube M.S. Choi, R. Lopez and R. Aguado, PRL (2005) 4 degenerate levels in the dot are coupled one for 1 electron: Double dots, dots with symmetries: D. Boese et al., PRB (2002) L. Borda et al., PRL

Finkelstein, Gleb

324

Ultrafast single-electron transfer in coupled quantum dots driven by a few-cycle chirped pulse  

SciTech Connect (OSTI)

We theoretically study the ultrafast transfer of a single electron between the ground states of a coupled double quantum dot (QD) structure driven by a nonlinear chirped few-cycle laser pulse. A time-dependent Schrödinger equation without the rotating wave approximation is solved numerically. We demonstrate numerically the possibility to have a complete transfer of a single electron by choosing appropriate values of chirped rate parameters and the intensity of the pulse. Even in the presence of the spontaneous emission and dephasing processes of the QD system, high-efficiency coherent transfer of a single electron can be obtained in a wide range of the pulse parameters. Our results illustrate the potential to utilize few-cycle pulses for the excitation in coupled quantum dot systems through the nonlinear chirp parameter control, as well as a guidance in the design of experimental implementation.

Yang, Wen-Xing, E-mail: wenxingyang2@126.com [Department of Physics, Southeast University, Nanjing 210096 (China); Institute of Photonics Technologies, National Tsing-Hua University, Hsinchu 300, Taiwan (China); Chen, Ai-Xi [Department of Applied Physics, School of Basic Science, East China Jiaotong University, Nanchang 330013 (China); Bai, Yanfeng [Department of Physics, Southeast University, Nanjing 210096 (China); Lee, Ray-Kuang [Institute of Photonics Technologies, National Tsing-Hua University, Hsinchu 300, Taiwan (China)

2014-04-14T23:59:59.000Z

325

Tunable photoluminescence of self-assembled GeSi quantum dots by B{sup +} implantation and rapid thermal annealing  

SciTech Connect (OSTI)

The layered GeSi quantum dots (QDs) are grown on (001) Si substrate by molecular beam epitaxy. The photoluminescence (PL) peak of the as-grown GeSi quantum dots has obvious blue shift and enhancement after processed by ion implantation and rapid thermal annealing. It is indicated that the blue shift is originated from the interdiffusion of Ge and Si at the interface between QDs and the surrounding matrix. The dependence of PL intensity on the excitation power shows that there are the nonradiative centers of shallow local energy levels from the point defects caused by the ion implantation, but not removed by the rapid thermal annealing. The tunable blue shift of the PL position from the 1300?nm to 1500?nm region may have significant application value in the optical communication.

Chen, Yulu; Wu, Shan; Ma, Yinjie; Fan, Yongliang; Yang, Xinju; Zhong, Zhenyang; Jiang, Zuimin [National Key Laboratory for Surface Physics and Department of Physics, Fudan University, Shanghai 200433 (China)

2014-06-21T23:59:59.000Z

326

Coulomb interaction of acceptors in Cd{sub 1?x}Mn{sub x}Te/CdTe quantum dot  

SciTech Connect (OSTI)

The investigation on the effect of confining potential like isotropic harmonic oscillator type potential on the binding and the Coulomb interaction energy of the double acceptors in the presence of magnetic field in a Cd{sub 1?x}Mn{sub x}Te/CdTe Spherical Quantum Dot has been made for the Mn ion composition x=0.3 and compared with the results obtained from the square well type potential using variational procedure in the effective mass approximation.

Kalpana, P.; Nithiananthi, P., E-mail: kjkumar-gri@rediffmail.com; Jayakumar, K., E-mail: kjkumar-gri@rediffmail.com [Department of Physics, Gandhigram Rural University, Gandhigram-624302, TamilNadu (India); Reuben, A. Merwyn Jasper D. [Department of Physics, School of Engineering, Saveetha University, Thandalam, Chennai- 600104, TamilNadu (India)

2014-04-24T23:59:59.000Z

327

Fast, High Fidelity Quantum Dot Spin Initialization without a Strong Magnetic Field by Two-Photon Processes  

E-Print Network [OSTI]

We describe a proposal for fast electron spin initialization in a negatively charged quantum dot coupled to a microcavity without the need for a strong magnetic field. We employ two-photon excitation to access trion states that are spin forbidden by one-photon excitation. Our simulation shows a maximum initialization speed of 1.3 GHz and maximum fidelity of 99.7% with realistic system parameters.

Arka Majumdar; Ziliang Lin; Andrei Faraon; Jelena Vuckovic

2009-07-20T23:59:59.000Z

328

Pulsed-gate measurements of the singlet-triplet relaxation time in a two-electron double quantum dot  

E-Print Network [OSTI]

-gate technique with charge sensing is used to measure the singlet-triplet relaxation time for nearly degenerate spin states in a two-electron double quantum dot. Transitions from the 1,1 charge occupancy state. At dilution refrigerator temperatures, this implies that EZeeman kBT 10 eV, or B 0.5 T. For B 0.5 T, T1 shows

Petta, Jason

329

Proposal for efficient mode converter based on cavity quantum electrodynamics dark mode in a semiconductor quantum dot coupled to a bimodal microcavity  

SciTech Connect (OSTI)

The ability to engineer and convert photons between different modes in a solid-state approach has extensive technological implications not only for classical communication systems but also for future quantum networks. In this paper, we put forward a scheme for coherent mode conversion of optical photons by utilizing the intermediate coupling between a single quantum dot and a bimodal photonic crystal microcavity via a waveguide. Here, one mode of the photonic crystal microcavity is coherently driven by an external single-frequency continuous-wave laser field and the two cavity modes are not coupled to each other due to their orthogonal polarizations. The undriven cavity mode is thus not directly coupled to the input driving laser and the only way it can get light is via the quantum dot. The influences of the system parameters on the photon-conversion efficiency are analyzed in detail in the limit of weak probe field and it is found that high photon-conversion efficiency can be achieved under appropriate conditions. It is shown that the cavity dark mode, which is a superposition of the two optical modes and is decoupled from the quantum dot, can appear in such a hybrid optical system. We discuss the properties of the dark mode and indicate that the formation of the dark mode enables the efficient transfer of optical fields between the two cavity modes.

Li, Jiahua [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Key Laboratory of Fundamental Physical Quantities Measurement of Ministry of Education, Wuhan 430074 (China); Yu, Rong, E-mail: yurong321@126.com [School of Science, Hubei Province Key Laboratory of Intelligent Robot, Wuhan Institute of Technology, Wuhan 430073 (China); Ma, Jinyong; Wu, Ying, E-mail: yingwu2@163.com [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

2014-10-28T23:59:59.000Z

330

Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field  

SciTech Connect (OSTI)

Electroluminescence and absorption spectra of a ten-layer InAs/GaAs quantum dot (QD) superlattice built in a two-section laser with sections of equal length is experimentally studied at room temperature. The thickness of the GaAs spacer layer between InAs QD layers, determined by transmission electron microscopy, is {approx}6 nm. In contrast to tunnel-coupled QDs, QD superlattices amplify the optical polarization intensity and waveguide absorption of the TM mode in comparison with the TE mode. It is found that variations in the multimodal periodic spectrum of differential absorption of the QD superlattice structure are strongly linearly dependent on the applied electric field. Differential absorption spectra exhibit the Wannier-Stark effect in the InAs/GaAs QD superlattice, in which, in the presence of an external electric field, coupling of wave functions of miniband electron states is suppressed and a series of discrete levels called the Wannier-Stark ladder states are formed.

Sobolev, M. M., E-mail: m.sobolev@mail.ioffe.ru; Gadzhiev, I. M.; Bakshaev, I. O.; Nevedomskii, V. N.; Buyalo, M. S.; Zadiranov, Yu. M.; Portnoi, E. L. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

2011-08-15T23:59:59.000Z

331

Design of 4-electrode optical device for application of vector electric fields to self-assembled quantum dot complexes  

SciTech Connect (OSTI)

Self-assembled InAs quantum dots (QDs) are of great interest as components of optoelectronic devices that can operate at the quantum limit. The charge configuration, interdot coupling, and symmetry of complexes containing multiple QDs can all be tuned with applied electric fields, but the magnitude and angle of the electric field required to control each of these parameters depend on the orientation of the QD complex. We present a 4-electrode device compatible with optical excitation and emission that allows application of electric fields with arbitrary magnitudes and angles relative to isolated QD complexes. We demonstrate the electric field tunability of this device with numerical simulations.

Zhou, Xinran; Doty, Matthew, E-mail: doty@udel.edu [University of Delaware, Newark, Delaware 19716 (United States)

2014-10-28T23:59:59.000Z

332

Exchange Interaction Between Three and Four Coupled Quantum Dots: Theory and Applications to Quantum Computing  

E-Print Network [OSTI]

Several prominent proposals have suggested that spins of localized electrons could serve as quantum computer qubits. The exchange interaction has been invoked as a means of implementing two qubit gates. In this paper, we analyze the strength and form of the exchange interaction under relevant conditions. We find that, when several spins are engaged in mutual interactions, the quantitative strengths or even qualitative forms of the interactions can change. It is shown that the changes can be dramatic within a Heitler-London model. Hund-Mulliken calculations are also presented, and support the qualititative conclusions from the Heitler-London model. The effects need to be considered in spin-based quantum computer designs, either as a source of gate error to be overcome or a new interaction to be exploited.

Ari Mizel; Daniel A. Lidar

2004-01-22T23:59:59.000Z

333

A Light-Matter Interface based on a Single InAs/GaAs Quantum Dot in a Nanometallic Cavity  

E-Print Network [OSTI]

Progress in solid-state optical cavities is tracked on a timeline of miniaturization. Here, we demonstrate a coupled emitter-cavity system consisting of an InAs/GaAs Quantum Dot embedded in a hybrid metal/semiconductor nanocavity. Key features of our nanometallic light-matter interface include: (i) order of magnitude reduction in mode volume compared to that of leading photonic crystal cQED systems, resulting in maximum atom-field coupling rate g/(2{\\pi})~180GHz; (ii) surface-emitting nanocylinder geometry and therefore good collection efficiency compared to the bulk (~5X enhancement); (iii) strong and broadband spontaneous emission rate enhancement (Purcell factor ~8); and finally (iv) the ability to efficiently optically address a multi-level quantum emitter based on a charged quantum dot inside the nanocavity. This light-matter interface could play an important role in studies of the cavity quantum electrodynamics as well as in its application to optical interconnects and quantum networks.

Thomas M. Babinec; Yousif A. Kelaita; Kevin A. Fischer; Konstantinos G. Lagoudakis; Tomas Sarmiento; Armand Rundquist; Arka Majumdar; Jelena Vuckovic

2014-06-27T23:59:59.000Z

334

Growth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix  

SciTech Connect (OSTI)

A moderately low temperature (?800 °C) thermal processing technique has been described for the growth of the silicon quantum dots (Si-QD) within microcrystalline silicon carbide (?c-SiC:H) dielectric thin films deposited by plasma enhanced chemical vapour deposition (PECVD) process. The nanocrystalline silicon grains (nc-Si) present in the as deposited films were initially enhanced by aluminium induced crystallization (AIC) method in vacuum at a temperature of T{sub v} = 525 °C. The samples were then stepwise annealed at different temperatures T{sub a} in air ambient. Analysis of the films by FTIR and XPS reveal a rearrangement of the ?c-SiC:H network has taken place with a significant surface oxidation of the nc-Si domains upon annealing in air. The nc-Si grain size (D{sub XRD}) as calculated from the XRD peak widths using Scherrer formula was found to decrease from 7 nm to 4 nm with increase in T{sub a} from 250 °C to 800 °C. A core shell like structure with the nc-Si as the core and the surface oxide layer as the shell can clearly describe the situation. The results indicate that with the increase of the annealing temperature in air the oxide shell layer becomes thicker and the nc-Si cores become smaller until their size reduced to the order of the Si-QDs. Quantum confinement effect due to the SiO covered nc-Si grains of size about 4 nm resulted in a photoluminescence peak due to the Si QDs with peak energy at 1.8 eV.

Kole, Arindam; Chaudhuri, Partha, E-mail: erpc@iacs.res.in [Indian Association for the Cultivation of Science, 2A and 2B Raja S.C. Mullick Road, Jadavpur, Kolkata-700032 (India)

2014-10-15T23:59:59.000Z

335

Layered insulator hexagonal boron nitride for surface passivation in quantum dot solar cell  

SciTech Connect (OSTI)

Single crystalline, two dimensional (2D) layered insulator hexagonal boron nitride (h-BN), is demonstrated as an emerging material candidate for surface passivation on mesoporous TiO{sub 2}. Cadmium selenide (CdSe) quantum dot based bulk heterojunction (BHJ) solar cell employed h-BN passivated TiO{sub 2} as an electron acceptor exhibits photoconversion efficiency ?46% more than BHJ employed unpassivated TiO{sub 2}. Dominant interfacial recombination pathways such as electron capture by TiO{sub 2} surface states and recombination with hole at valence band of CdSe are efficiently controlled by h-BN enabled surface passivation, leading to improved photovoltaic performance. Highly crystalline, confirmed by transmission electron microscopy, dangling bond-free 2D layered h-BN with self-terminated atomic planes, achieved by chemical exfoliation, enables efficient passivation on TiO{sub 2}, allowing electronic transport at TiO{sub 2}/h-BN/CdSe interface with much lower recombination rate compared to an unpassivated TiO{sub 2}/CdSe interface.

Shanmugam, Mariyappan; Jain, Nikhil; Jacobs-Gedrim, Robin; Yu, Bin, E-mail: byu@albany.edu [College of Nanoscale Science and Engineering, State University of New York, Albany, New York 12203 (United States)] [College of Nanoscale Science and Engineering, State University of New York, Albany, New York 12203 (United States); Xu, Yang [Institute of Microelectronics and Optoelectronics, Zhejiang University, Hangzhou 310027 (China)] [Institute of Microelectronics and Optoelectronics, Zhejiang University, Hangzhou 310027 (China)

2013-12-09T23:59:59.000Z

336

First principles DFT study of dye-sensitized CdS quantum dots  

SciTech Connect (OSTI)

Dye-sensitized quantum dots (QDs) are considered promising candidates for dye-sensitized solar cells. In order to maximize their efficiency, detailed theoretical studies are important. Here, we report a first principles density functional theory (DFT) investigation of experimentally realized dye - sensitized QD / ligand systems, viz., Cd{sub 16}S{sub 16}, capped with acetate molecules and a coumarin dye. The hybrid B3LYP functional and a 6?311+G(d,p)/LANL2dz basis set are used to study the geometric, energetic and electronic properties of these clusters. There is significant structural rearrangement in all the clusters studied - on the surface for the bare QD, and in the positions of the acetate / dye ligands for the ligated QDs. The density of states (DOS) of the bare QD shows states in the band gap, which disappear on surface passivation with the acetate molecules. Interestingly, in the dye-sensitised QD, the HOMO is found to be localized mainly on the dye molecule, while the LUMO is on the QD, as required for photo-induced electron injection from the dye to the QD.

Jain, Kalpna; Singh, Kh. S. [Department of Physics, D. J. College, Baraut -250611, U.P. (India); Kishor, Shyam, E-mail: shyam387@gmail.com [Department of Chemistry, J. V. College, Baraut -250611, U.P. (India); Josefesson, Ida; Odelius, Michael [Fysikum, Albanova University Center, Stockholm University, S-106 91 Stockholm (Sweden); Ramaniah, Lavanya M. [High Pressure and Synchrotron Radiation Physics Division, Bhabha Atomic Research Centre, Mumbai-400085 (India)

2014-04-24T23:59:59.000Z

337

Blinking effect and the use of quantum dots in single molecule spectroscopy  

SciTech Connect (OSTI)

Highlights: Black-Right-Pointing-Pointer It is possible to eliminate the blinking effect of a water-soluble QD. Black-Right-Pointing-Pointer We provide a direct method to study protein function and dynamics at the single level. Black-Right-Pointing-Pointer QD, potent tool for single molecule studies of biochemical and biological processes. -- Abstract: Luminescent semiconductor nanocrystals (quantum dots, QD) have unique photo-physical properties: high photostability, brightness and narrow size-tunable fluorescence spectra. Due to their unique properties, QD-based single molecule studies have become increasingly more popular during the last years. However QDs show a strong blinking effect (random and intermittent light emission), which may limit their use in single molecule fluorescence studies. QD blinking has been widely studied and some hypotheses have been done to explain this effect. Here we summarise what is known about the blinking effect in QDs, how this phenomenon may affect single molecule studies and, on the other hand, how the 'on'/'off' states can be exploited in diverse experimental settings. In addition, we present results showing that site-directed binding of QD to cysteine residues of proteins reduces the blinking effect. This option opens a new possibility of using QDs to study protein-protein interactions and dynamics by single molecule fluorescence without modifying the chemical composition of the solution or the QD surface.

Rombach-Riegraf, Verena; Oswald, Peter; Bienert, Roland; Petersen, Jan [Albert-Ludwigs-Universitaet Freiburg, Institut fuer Physikalische Chemie, Albertstrasse 23a, 79104 Freiburg (Germany)] [Albert-Ludwigs-Universitaet Freiburg, Institut fuer Physikalische Chemie, Albertstrasse 23a, 79104 Freiburg (Germany); Domingo, M.P. [Instituto de Carboquimica (CSIC), Miguel Luesma 4, 50018 Zaragoza (Spain)] [Instituto de Carboquimica (CSIC), Miguel Luesma 4, 50018 Zaragoza (Spain); Pardo, Julian [Grupo Apoptosis, Inmunidad y Cancer, Departamento Bioquimica y Biologia Molecular y Celular, Fac. Ciencias, Universidad de Zaragoza, Zaragoza (Spain) [Grupo Apoptosis, Inmunidad y Cancer, Departamento Bioquimica y Biologia Molecular y Celular, Fac. Ciencias, Universidad de Zaragoza, Zaragoza (Spain); Fundacion Aragon I-D (ARAID), Gobierno de Aragon, Zaragoza (Spain); Immune Effector Cells Group, Aragon Health Research Institute (IIS Aragon), Biomedical Research Centre of Aragon (CIBA) Fundacion Aragon I-D - ARAID, Gobierno de Aragon, Zaragoza (Spain); Graeber, P. [Albert-Ludwigs-Universitaet Freiburg, Institut fuer Physikalische Chemie, Albertstrasse 23a, 79104 Freiburg (Germany)] [Albert-Ludwigs-Universitaet Freiburg, Institut fuer Physikalische Chemie, Albertstrasse 23a, 79104 Freiburg (Germany); Galvez, E.M., E-mail: eva@icb.csic.es [Instituto de Carboquimica (CSIC), Miguel Luesma 4, 50018 Zaragoza (Spain); Immune Effector Cells Group, Aragon Health Research Institute (IIS Aragon), Biomedical Research Centre of Aragon (CIBA) Fundacion Aragon I-D - ARAID, Gobierno de Aragon, Zaragoza (Spain)

2013-01-04T23:59:59.000Z

338

Subdiffraction, Luminescence-Depletion Imaging of Isolated, Giant, CdSe/CdS Nanocrystal Quantum Dots  

SciTech Connect (OSTI)

Subdiffraction spatial resolution luminescence depletion imaging was performed with giant CdSe/14CdS nanocrystal quantum dots (g-NQDs) dispersed on a glass slide. Luminescence depletion imaging used a Gaussian shaped excitation laser pulse overlapped with a depletion pulse, shaped into a doughnut profile, with zero intensity in the center. Luminescence from a subdiffraction volume is collected from the central portion of the excitation spot, where no depletion takes place. Up to 92% depletion of the luminescence signal was achieved. An average full width at half-maximum of 40 ± 10 nm was measured in the lateral direction for isolated g-NQDs at an air interface using luminescence depletion imaging, whereas the average full width at half-maximum was 450 ± 90 nm using diffraction-limited, confocal luminescence imaging. Time-gating of the luminescence depletion data was required to achieve the stated spatial resolution. No observable photobleaching of the g-NQDs was present in the measurements, which allowed imaging with a dwell time of 250 ms per pixel to obtain images with a high signal-to-noise ratio. The mechanism for luminescence depletion is likely stimulated emission, stimulated absorption, or a combination of the two. The g-NQDs fulfill a need for versatile, photostable tags for subdiffraction imaging schemes where high laser powers or long exposure times are used.

Lesoine, Michael D. [Ames Laboratory; Bhattacharjee, Ujjal [Ames Laboratory; Guo, Yijun [Ames Laboratory; Vela, Javier [Ames Laboratory; Petrich, Jacob W. [Ames Laboratory; Smith, Emily A. [Ames Laboratory

2013-01-18T23:59:59.000Z

339

Heat generation by electronic current in a quantum dot spin-valve  

SciTech Connect (OSTI)

Electric-current-induced heat generation in an interacting single-level quantum dot connected to ferromagnetic leads with noncollinear magnetizations is theoretically investigated. We find that when the two leads' spin polarization rates are identical and much smaller than unit, the magnitude of the heat generation is almost monotonously enhanced as the angle between the leads' magnetic moments is varied from zero to ?, while the magnitude of the electric current is continuously suppressed. Moreover, the properties of the heat generation depend on the lead's spin polarization rate in different ways when the angle is varied. If at least one of the leads' spin polarization rate approaches to unit, the spin-valve effect of the heat generation is identical to that of the electric current. Now the previously found negative differential of the heat generation disappears when the angle approaches to ?. As compared to the current, the heat generation is more sensitive to the system's asymmetry when one of the electrodes is half-metallic in noncollinear configurations.

Chi, Feng [School of Physical Science and Technology, Inner Mongolia University, Huhehaote 010023 (China); College of Engineering, Bohai University, Jinzhou 121013 (China); Sun, Lian-Liang [College of Science, North China University of Technology, Beijing 100041 (China); Guo, Yu [College of Engineering, Bohai University, Jinzhou 121013 (China)

2014-10-28T23:59:59.000Z

340

Ultra-low threshold, electrically pumped quantum dot photonic crystal nanocavity laser  

E-Print Network [OSTI]

Efficient, low threshold, and compact semiconductor laser sources are being investigated for many applications in high-speed communications, information processing, and optical interconnects. The best edge-emitting and vertical cavity surface-emitting lasers (VCSELs) have thresholds on the order of 100 \\muA[1,2] but dissipate too much power to be practical for many applications, particularly optical interconnects[3]. Optically pumped photonic crystal (PC) nanocavity lasers represent the state of the art in low-threshold lasers[4,5]; however, in order to be practical, techniques to electrically pump these structures must be developed. Here we demonstrate a quantum dot photonic crystal nanocavity laser in gallium arsenide pumped by a lateral p-i-n junction formed by ion implantation. Continuous wave lasing is observed at temperatures up to 150 K. Thresholds of only 181 nA at 50 K and 287 nA at 150 K are observed - the lowest thresholds ever observed in any type of electrically pumped laser.

Bryan Ellis; Marie Mayer; Gary Shambat; Tomas Sarmiento; James Harris; Eugene Haller; Jelena Vuckovic

2011-05-02T23:59:59.000Z

Note: This page contains sample records for the topic "determination quantum dot" from the National Library of EnergyBeta (NLEBeta).
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341

Effect of graphene on photoluminescence properties of graphene/GeSi quantum dot hybrid structures  

SciTech Connect (OSTI)

Graphene has been discovered to have two effects on the photoluminescence (PL) properties of graphene/GeSi quantum dot (QD) hybrid structures, which were formed by covering monolayer graphene sheet on the multilayer ordered GeSi QDs sample surfaces. At the excitation of 488?nm laser line, the hybrid structure had a reduced PL intensity, while at the excitation of 325?nm, it had an enhanced PL intensity. The attenuation in PL intensity can be attributed to the transferring of electrons from the conducting band of GeSi QDs to the graphene sheet. The electron transfer mechanism was confirmed by the time resolved PL measurements. For the PL enhancement, a mechanism called surface-plasmon-polariton (SPP) enhanced absorption mechanism is proposed, in which the excitation of SPP in the graphene is suggested. Due to the resonant excitation of SPP by incident light, the absorption of incident light is much enhanced at the surface region, thus leading to more exciton generation and a PL enhancement in the region. The results may be helpful to provide us a way to improve optical properties of low dimensional surface structures.

Chen, Y. L.; Ma, Y. J.; Wang, W. Q.; Ding, K.; Wu, Q.; Fan, Y. L.; Yang, X. J.; Zhong, Z. Y.; Jiang, Z. M., E-mail: zmjiang@fudan.edu.cn [State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433 (China); Chen, D. D.; Xu, F. [SHU-SolarE R and D Lab, Department of Physics, College of Science, Shanghai University, Shanghai 200444 (China)

2014-07-14T23:59:59.000Z

342

Improvement of the quality of graphene-capped InAs/GaAs quantum dots  

SciTech Connect (OSTI)

In this paper, we study the transfer of graphene onto InAs/GaAs quantum dots (QDs). The graphene is first grown on Cu foils by chemical vapor deposition and then polymer Polymethyl Methacrylate (PMMA) is deposited on the top of graphene/Cu. High quality graphene sheet has been obtained by lowering the dissolving rate of PMMA using vapor processing. Uncapped as well as capped graphene InAs/GaAs QDs have been studied using optical microscopy, scanning electron microscopy, and Raman spectroscopy. We gather from this that the average shifts ?? of QDs Raman peaks are reduced compared to those previously observed in graphene and GaAs capped QDs. The encapsulation by graphene makes the indium atomic concentration intact in the QDs by the reduction of the strain effect of graphene on QDs and the migration of In atoms towards the surface. This gives us a new hetero-structure graphene–InAs/GaAs QDs wherein the graphene plays a key role as a cap layer.

Othmen, Riadh, E-mail: othmenriadh@yahoo.fr; Rezgui, Kamel; Ajlani, Hosni; Oueslati, Meherzi [Faculté des Sciences de Tunis, Université de Tunis El Manar, Campus, 2092 El Manar Tunis (Tunisia); Cavanna, Antonella; Madouri, Ali [CNRS/LPN, Route de Nozay, F-91460 Marcoussis (France); Arezki, Hakim; Gunes, Fethullah [Laboratoire de Génie Electrique de Paris, 11, rue Joliot Curie Plateau de Moulon, 91192 Gif sur Yvette (France)

2014-06-07T23:59:59.000Z

343

Transport through open quantum dots: Making semiclassics quantitative Iva Bezinov,1,* Ludger Wirtz,2 Stefan Rotter,1 Christoph Stampfer,3 and Joachim Burgdrfer1  

E-Print Network [OSTI]

, Vienna University of Technology, Wiedner HauptstraÃ?e 8-10/136, 1040 Vienna, Austria, EU 2Department ISEN, Germany, EU Received 28 October 2009; published 9 March 2010 We investigate electron transport through clean open quantum dots quantum billiards . We present a semi- classical theory that allows

Rotter, Stefan

344

Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers  

SciTech Connect (OSTI)

Various approaches can be used to selectively control the amount of intermixing in III-V quantum well and quantum dot structures. Impurity-free vacancy disordering is one technique that is favored for its simplicity, however this mechanism is sensitive to many experimental parameters. In this study, a series of silicon oxynitride capping layers have been used in the intermixing of InGaAs/GaAs quantum well and quantum dot structures. These thin films were deposited by sputter deposition in order to minimize the incorporation of hydrogen, which has been reported to influence impurity-free vacancy disordering. The degree of intermixing was probed by photoluminescence spectroscopy and this is discussed with respect to the properties of the SiO{sub x}N{sub y} films. This work was also designed to monitor any additional intermixing that might be attributed to the sputtering process. In addition, the high-temperature stress is known to affect the group-III vacancy concentration, which is central to the intermixing process. This stress was directly measured and the experimental values are compared with an elastic-deformation model.

McKerracher, Ian; Fu Lan; Hoe Tan, Hark; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

2012-12-01T23:59:59.000Z

345

Interface effect of InSb quantum dots embedded in SiO{sub 2} matrix  

SciTech Connect (OSTI)

The interface effect of InSb quantum dots (QDs) embedded in SiO{sub 2} matrix has been investigated by Raman scattering spectroscopy, x-ray diffraction (XRD), and x-ray absorption fine structure (both of EXAFS and XANES). The EXAFS and XRD results show clearly that the bond length of the Sb-In first shell of the InSb QDs contracts slightly about 0.02 A compared with that of the bulk InSb. The Raman scattering spectrum of the InSb QDs reveals that the lattice contraction partly weakens the phonon confinement effect. The coordination geometry at the interface of the InSb QDs is mainly Sb (In)-O covalent bridge bonds. The Sb K-XANES calculations of InSb QDs embedded in SiO{sub 2} matrix based on FEFF8 indicate that the intensity increase and the broadening of the white line peak of Sb atoms are essentially attributed to both the increase of Sb p-hole population and the change of Sb intra-atomic potential {mu}{sub 0}(E) affected by the SiO{sub 2} matrix. Our results show that the interface effect between the InSb QDs and the SiO{sub 2} matrix leads not only to the slight lattice contraction of InSb QDs and the large structural distortion in the interface area of InSb QDs, but also to the significant change of the Sb intra-atomic potential and the obvious charge redistribution around Sb atoms.

Chen Dongliang; Fan Jiangwei; Wei Shiqiang [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029 (China); Li Chaosheng; Zhu Zhengang [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, PO Box 1129, Hefei 230031 (China)

2005-08-15T23:59:59.000Z

346

Dynamic nuclear polarization and Hanle effect in (In,Ga)As/GaAs quantum dots. Role of nuclear spin fluctuations  

SciTech Connect (OSTI)

The degree of circular polarization of photoluminescence of (In,Ga)As quantum dots as a function of magnetic field applied perpendicular to the optical axis (Hanle effect) is experimentally studied. The measurements have been performed at various regimes of the optical excitation modulation. The analysis of experimental data has been performed in the framework of a vector model of regular nuclear spin polarization and its fluctuations. The analysis allowed us to evaluate the magnitude of nuclear polarization and its dynamics at the experimental conditions used.

Gerlovin, I. Ya. [Spin Optics Laboratory, Saint Petersburg State University, Petrodvorets, 198504 St. Petersburg (Russian Federation); Cherbunin, R. V.; Ignatiev, I. V.; Kuznetsova, M. S.; Verbin, S. Yu. [Spin Optics Laboratory, Saint Petersburg State University, Petrodvorets, 198504 St. Petersburg, Russia and Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund (Germany); Flisinski, K.; Bayer, M. [Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund (Germany); Reuter, D.; Wieck, A. D. [Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum (Germany); Yakovlev, D. R. [Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund, Germany and A. F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

2013-12-04T23:59:59.000Z

347

Bound state energies and wave functions of spherical quantum dots in presence of a confining potential model  

E-Print Network [OSTI]

We obtain the exact energy spectra and corresponding wave functions of the radial Schr\\"odinger equation (RSE) for any (n,l) state in the presence of a combination of psudoharmonic, Coulomb and linear confining potential terms using an exact analytical iteration method. The interaction potential model under consideration is Cornell-modified plus harmonic (CMpH) type which is a correction form to the harmonic, Coulomb and linear confining potential terms. It is used to investigates the energy of electron in spherical quantum dot and the heavy quarkonia (QQ-onia).

Sameer M. Ikhdair

2011-10-03T23:59:59.000Z

348

Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region  

SciTech Connect (OSTI)

Microring cavities (diameter D = 2.7-7 {mu}m) with an active region based on InAs/InGaAs quantum dots are fabricated and their characteristics are studied by the microphotoluminescence method and near-field optical microscopy. A value of 22 000 is obtained for the Q factor of a microring cavity with the diameter D = 6 {mu}m. Lasing up to room temperature is obtained in an optically pumped ring microlaser with a diameter of D = 2.7 {mu}m.

Kryzhanovskaya, N. V., E-mail: kryj@mail.ioffe.ru; Zhukov, A. E.; Nadtochy, A. M. [Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Center for Research and Education (Russian Federation)] [Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Center for Research and Education (Russian Federation); Maximov, M. V. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Moiseev, E. I. [St. Petersburg Polytechnic University (Russian Federation)] [St. Petersburg Polytechnic University (Russian Federation); Kulagina, M. M. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Savelev, A. V.; Arakcheeva, E. M. [Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Center for Research and Education (Russian Federation)] [Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Center for Research and Education (Russian Federation); Lipovskii, A. A. [St. Petersburg Polytechnic University (Russian Federation)] [St. Petersburg Polytechnic University (Russian Federation); Zubov, F. I. [Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Center for Research and Education (Russian Federation)] [Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Center for Research and Education (Russian Federation); Kapsalis, A.; Mesaritakis, C.; Syvridis, D. [University of Athens (Greece)] [University of Athens (Greece); Mintairov, A. [University of Notre Dame (United States)] [University of Notre Dame (United States); Livshits, D. [Innolume GmbH (Germany)] [Innolume GmbH (Germany)

2013-10-15T23:59:59.000Z

349

Efficient, air-stable colloidal quantum dot solar cells encapsulated using atomic layer deposition of a nanolaminate barrier  

SciTech Connect (OSTI)

Atomic layer deposition was used to encapsulate colloidal quantum dot solar cells. A nanolaminate layer consisting of alternating alumina and zirconia films provided a robust gas permeation barrier which prevented device performance degradation over a period of multiple weeks. Unencapsulated cells stored in ambient and nitrogen environments demonstrated significant performance losses over the same period. The encapsulated cell also exhibited stable performance under constant simulated solar illumination without filtration of harsh ultraviolet photons. This monolithically integrated thin film encapsulation method is promising for roll-to-roll processed high efficiency nanocrystal solar cells.

Ip, Alexander H.; Labelle, André J.; Sargent, Edward H., E-mail: ted.sargent@utoronto.ca [Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4 (Canada)

2013-12-23T23:59:59.000Z

350

Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets  

SciTech Connect (OSTI)

We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

2013-08-19T23:59:59.000Z

351

Validity of the single-particle description and charge noise resilience for multi-electron quantum dots  

E-Print Network [OSTI]

We construct an optimal set of single-particle states for few-electron quantum dots (QDs) using the method of natural orbitals (NOs). The NOs include also the effects of the Coulomb repulsion between electrons. We find that they agree well with the noniteracting orbitals for GaAs QDs of realistic parameters, while the Coulomb interactions only rescale the radius of the NOs compared to the noninteracting case. We use NOs to show that four-electron QDs are less susceptible to charge noise than their two-electron counterparts.

Michiel A. Bakker; Sebastian Mehl; Tuukka Hiltunen; Ari Harju; David P. DiVincenzo

2015-02-11T23:59:59.000Z

352

Dramatically enhanced self-assembly of GeSi quantum dots with superior photoluminescence induced by the substrate misorientation  

SciTech Connect (OSTI)

A dramatically enhanced self-assembly of GeSi quantum dots (QDs) is disclosed on slightly miscut Si (001) substrates, leading to extremely dense QDs and even a growth mode transition. The inherent mechanism is addressed in combination of the thermodynamics and the growth kinetics both affected by steps on the vicinal surface. Moreover, temperature-dependent photoluminescence spectra from dense GeSi QDs on the miscut substrate demonstrate a rather strong peak persistent up to 300 K, which is attributed to the well confinement of excitons in the dense GeSi QDs due to the absence of the wetting layer on the miscut substrate.

Zhou, Tong; Zhong, Zhenyang, E-mail: zhenyangz@fudan.edu.cn [State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433 (China)

2014-02-01T23:59:59.000Z

353

Pulsed Electrical Spin Injection into InGaAs Quantum Dots: Studies of the Electroluminescence Polarization Dynamics  

SciTech Connect (OSTI)

We present time-resolved studies of the spin polarization dynamics during and after initialization through pulsed electrical spin injection into InGaAs quantum dots embedded in a p-i-n-type spin-injection light-emitting diode. Experiments are performed with pulse widths in the nanosecond range and a time-resolved single photon counting setup is used to detect the subsequent electroluminescence. We find evidence that the achieved spin polarization shows an unexpected temporal behavior, attributed mainly to many-carrier and non-equilibrium effects in the device.

Asshoff, P.; Loeffler, W.; Fluegge, H.; Zimmer, J.; Mueller, J.; Westenfelder, B.; Hu, D. Z.; Schaadt, D. M.; Kalt, H.; Hetterich, M. [Institut fuer Angewandte Physik and DFG Center for Functional Nanostructures (CFN), Universitaet Karlsruhe, 76131 Karlsruhe (Germany)

2010-01-04T23:59:59.000Z

354

Self-organized arrays of graphene and few-layer graphene quantum dots in fluorographene matrix: Charge transient spectroscopy  

SciTech Connect (OSTI)

Arrays of graphene or few-layer graphene quantum dots (QDs) embedded in a partially fluorinated graphene matrix were created by chemical functionalization of layers. Charge transient spectroscopy employed for investigation of obtained QD systems (size 20–70 nm) has allowed us to examine the QD energy spectra and the time of carrier emission (or charge relaxation) from QDs as a function of film thickness. It was found that the characteristic time of carrier emission from QDs decreased markedly (by about four orders of magnitude) on increasing the QD thickness from one graphene monolayer to 3 nm. Daylight-assisted measurements also demonstrate a strong decrease of the carrier emission time.

Antonova, Irina V., E-mail: antonova@isp.nsc.ru [Rzhanov Institute of Semiconductor Physics, SB RAS, Lavrentiev Avenue 13, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Pirogov st. 2, Novosibirsk 630090 (Russian Federation); Nebogatikova, Nadezhda A.; Prinz, Victor Ya. [Rzhanov Institute of Semiconductor Physics, SB RAS, Lavrentiev Avenue 13, Novosibirsk 630090 (Russian Federation)

2014-05-12T23:59:59.000Z

355

Nonlinear optical spectra having characteristics of Fano interferences in coherently coupled lowest exciton biexciton states in semiconductor quantum dots  

SciTech Connect (OSTI)

Optical nonlinear effects are examined using a two-color micro-photoluminescence (micro-PL) method in a coherently coupled exciton-biexciton system in a single quantum dot (QD). PL and photoluminescence excitation spectroscopy (PLE) are employed to measure the absorption spectra of the exciton and biexciton states. PLE for Stokes and anti-Stokes PL enables us to clarify the nonlinear optical absorption properties in the lowest exciton and biexciton states. The nonlinear absorption spectra for excitons exhibit asymmetric shapes with peak and dip structures, and provide a distinct contrast to the symmetric dip structures of conventional nonlinear spectra. Theoretical analyses with a density matrix method indicate that the nonlinear spectra are caused not by a simple coherent interaction between the exciton and biexciton states but by coupling effects among exciton, biexciton and continuum states. These results indicate that Fano quantum interference effects appear in exciton-biexciton systems at QDs and offer important insights into their physics.

Gotoh, Hideki, E-mail: gotoh.hideki@lab.ntt.co.jp; Sanada, Haruki; Yamaguchi, Hiroshi; Sogawa, Tetsuomi [NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198 (Japan)

2014-10-15T23:59:59.000Z

356

Exploring size and state dynamics in CdSe quantum dots using two-dimensional electronic spectroscopy  

SciTech Connect (OSTI)

Development of optoelectronic technologies based on quantum dots depends on measuring, optimizing, and ultimately predicting charge carrier dynamics in the nanocrystal. In such systems, size inhomogeneity and the photoexcited population distribution among various excitonic states have distinct effects on electron and hole relaxation, which are difficult to distinguish spectroscopically. Two-dimensional electronic spectroscopy can help to untangle these effects by resolving excitation energy and subsequent nonlinear response in a single experiment. Using a filament-generated continuum as a pump and probe source, we collect two-dimensional spectra with sufficient spectral bandwidth to follow dynamics upon excitation of the lowest three optical transitions in a polydisperse ensemble of colloidal CdSe quantum dots. We first compare to prior transient absorption studies to confirm excitation-state-dependent dynamics such as increased surface-trapping upon excitation of hot electrons. Second, we demonstrate fast band-edge electron-hole pair solvation by ligand and phonon modes, as the ensemble relaxes to the photoluminescent state on a sub-picosecond time-scale. Third, we find that static disorder due to size polydispersity dominates the nonlinear response upon excitation into the hot electron manifold; this broadening mechanism stands in contrast to that of the band-edge exciton. Finally, we demonstrate excitation-energy dependent hot-carrier relaxation rates, and we describe how two-dimensional electronic spectroscopy can complement other transient nonlinear techniques.

Caram, Justin R.; Zheng, Haibin; Rolczynski, Brian S.; Griffin, Graham B.; Engel, Gregory S., E-mail: gsengel@uchicago.edu [Department of Chemistry, The Institute for Biophysical Dynamics, and The James Franck Institute, The University of Chicago, Chicago, Illinois 60637 (United States); Dahlberg, Peter D. [Graduate Program in the Biophysical Sciences, The Institute for Biophysical Dynamics, and The James Franck Institute, The University of Chicago, Chicago, Illinois 60637 (United States)] [Graduate Program in the Biophysical Sciences, The Institute for Biophysical Dynamics, and The James Franck Institute, The University of Chicago, Chicago, Illinois 60637 (United States); Dolzhnikov, Dmitriy S.; Talapin, Dmitri V. [Department of Chemistry and The James Franck Institute, The University of Chicago, Chicago, Illinois 60637 (United States)] [Department of Chemistry and The James Franck Institute, The University of Chicago, Chicago, Illinois 60637 (United States)

2014-02-28T23:59:59.000Z

357

Fabrication of InAs quantum dots in AlAs/GaAs DBR pillar microcavities for single photon sources  

SciTech Connect (OSTI)

We report the molecular beam epitaxy growth of low-density strain-induced InAs quantum dots (QD) embedded in an AlAs/GaAs distributed Bragg reflector structure for a triggered photon source. By optimal selection of growth temperature, InAs deposited thickness and other experimental parameters, it is possible to grow low density (10/{mu}m{sup 2}) InAs quantum dots with a suitable emission wavelength for a triggered photon source. The empirical formulas for the refractive indices of AlAs and GaAs materials at high temperature over a wide wavelength range are constructed by combining high resolution x-ray diffraction, dynamic optical reflectivity, and optical reflectivity spectrum techniques. Utilizing the electron-beam lithography and electron-cyclotron-resonance plasma etching techniques, a micropost microcavity with the top diameter of 0.6 {mu}m and the post height of 4.2 {mu}m has been fabricated. Narrow, spectrally limited single QD emission embedded in a micropost microcavity is observed in the photoluminescence.

Zhang Bingyang; Solomon, Glenn S.; Pelton, Matthew; Plant, Jocelyn; Santori, Charles; Vuckovic, Jelena; Yamamoto, Yoshihisa [Quantum Entanglement Project, ICORP, JST, Edward L. Ginzton Laboratory, Stanford University, Stanford, California 94305-4085 (United States)

2005-04-01T23:59:59.000Z

358

Quantum discord determines the interferometric power of quantum states  

E-Print Network [OSTI]

Quantum metrology exploits quantum mechanical laws to improve the precision in estimating technologically relevant parameters such as phase, frequency, or magnetic fields. Probe states are usually tailored on the particular dynamics whose parameters are being estimated. Here we consider a novel framework where quantum estimation is performed in an interferometric configuration, using bipartite probe states prepared when only the spectrum of the generating Hamiltonian is known. We introduce a figure of merit for the scheme, given by the worst case precision over all suitable Hamiltonians, and prove that it amounts exactly to a computable measure of discord-type quantum correlations for the input probe. We complement our theoretical results with a metrology experiment, realized in a highly controllable room-temperature nuclear magnetic resonance setup, which provides a proof-of-concept demonstration for the usefulness of discord in sensing applications. Discordant probes are shown to guarantee a nonzero precision in the estimation procedure for different generating Hamiltonians, while classically correlated probes are unable to accomplish the estimation in a worst case setting. This work establishes a rigorous and direct operational interpretation for general quantum correlations, shedding light on their potential for quantum technology.

Davide Girolami; Alexandre M. Souza; Vittorio Giovannetti; Tommaso Tufarelli; Jefferson G. Filgueiras; Roberto S. Sarthour; Diogo O. Soares-Pinto; Ivan S. Oliveira; Gerardo Adesso

2014-05-28T23:59:59.000Z

359

CdTe, CdTe/CdS Core/Shell, and CdTe/CdS/ZnS Core/Shell/Shell Quantum Dots Study.  

E-Print Network [OSTI]

?? CdTe, CdTe/CdS core/shell, and CdTe/CdS/ZnS core/shell/shell quantum dots (QDs) are potential candidates for bio-imaging and solar cell applications because of some special physical properties… (more)

Yan, Yueran

2012-01-01T23:59:59.000Z

360

Measurement of Temporal Correlations of the Overhauser Field in a Double Quantum Dot D. J. Reilly,1,* J. M. Taylor,2  

E-Print Network [OSTI]

of high-bandwidth proximal charge sensing [30]. Fluctuations are found to be broadband over in a dilution refrigerator with base electron temperature of $120 mK. The conductance GQPC of a proximal radio frequency quantum point contact (rf QPC) is sensitive to the charge configuration of the double dot. GQPC

Petta, Jason

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While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Observation of room temperature optical absorption in InP/GaAs type-II ultrathin quantum wells and quantum dots  

SciTech Connect (OSTI)

Room temperature optical absorption process is observed in ultrathin quantum wells (QWs) and quantum dots (QDs) of InP/GaAs type-II band alignment system using surface photovoltage spectroscopy technique, where no measurable photoluminescence signal is available. Clear signature of absorption edge in the sub band gap region of GaAs barrier layer is observed for the ultrathin QWs and QDs, which red shifts with the amount of deposited InP material. Movement of photogenerated holes towards the sample surface is proposed to be the main mechanism for the generation of surface photovoltage in type-II ultrathin QWs and QDs. QDs of smaller size are found to be free from the dislocations as confirmed by the high resolution transmission electron microscopy images.

Singh, S. D., E-mail: devsh@rrcat.gov.in; Porwal, S.; Mondal, Puspen; Srivastava, A. K.; Mukherjee, C.; Dixit, V. K.; Sharma, T. K.; Oak, S. M. [Raja Ramanna Centre for Advanced Technology, Indore-452013, Madhya Pradesh (India)

2014-06-14T23:59:59.000Z

362

Nanocrystalline-Si-dot multi-layers fabrication by chemical vapor deposition with H-plasma surface treatment and evaluation of structure and quantum confinement effects  

SciTech Connect (OSTI)

100-nm-thick nanocrystalline silicon (nano-Si)-dot multi-layers on a Si substrate were fabricated by the sequential repetition of H-plasma surface treatment, chemical vapor deposition, and surface oxidation, for over 120 times. The diameter of the nano-Si dots was 5–6 nm, as confirmed by both the transmission electron microscopy and X-ray diffraction analysis. The annealing process was important to improve the crystallinity of the nano-Si dot. We investigated quantum confinement effects by Raman spectroscopy and photoluminescence (PL) measurements. Based on the experimental results, we simulated the Raman spectrum using a phenomenological model. Consequently, the strain induced in the nano-Si dots was estimated by comparing the experimental and simulated results. Taking the estimated strain value into consideration, the band gap modulation was measured, and the diameter of the nano-Si dots was calculated to be 5.6 nm by using PL. The relaxation of the q ? 0 selection rule model for the nano-Si dots is believed to be important to explain both the phenomena of peak broadening on the low-wavenumber side observed in Raman spectra and the blue shift observed in PL measurements.

Kosemura, Daisuke, E-mail: d-kose@isc.meiji.ac.jp; Mizukami, Yuki; Takei, Munehisa; Numasawa, Yohichiroh; Ogura, Atsushi [School of Science and Technology, Meiji University, Kawasaki 214-8571 (Japan)] [School of Science and Technology, Meiji University, Kawasaki 214-8571 (Japan); Ohshita, Yoshio [Toyota Technological Institute, Nagoya 468-8511 (Japan)] [Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-01-15T23:59:59.000Z

363

Single hole quantum dot transistors in silicon Effendi Leobandung, Lingjie Guo, and Stephen Y. Choua)  

E-Print Network [OSTI]

of the gate voltage have been observed at temperatures over 81 K and drain biases over 66 mV. The oscillations to the drain. As the gate voltage was scanned, the drain current i.e., the hole current oscil- lated Fig. 3-dot transistors were fabricated in silicon-on-insulator. Strong oscillations in the drain current as a function

364

Laser irradiation effects on the CdTe/ZnTe quantum dot structure studied by Raman and AFM spectroscopy  

SciTech Connect (OSTI)

Micro-Raman spectroscopy has been applied to investigate the impact of laser irradiation on semiconducting CdTe/ZnTe quantum dots (QDs) structures. A reference sample (without dots) was also studied for comparison. Both samples were grown by molecular beam epitaxy technique on the p-type GaAs substrate. The Raman spectra have been recorded for different time of a laser exposure and for various laser powers. The spectra for both samples exhibit peak related to the localized longitudinal (LO) ZnTe phonon of a wavenumber equal to 210 cm{sup -1}. For the QD sample, a broad band corresponding to the LO CdTe phonon related to the QD-layer appears at a wavenumber of 160 cm{sup -1}. With increasing time of a laser beam exposure and laser power, the spectra get dominated by tellurium-related peaks appearing at wavenumbers around 120 cm{sup -1} and 140 cm{sup -1}. Simultaneously, the ZnTe surface undergoes rising damage, with the formation of Te aggregates at the pinhole edge as reveal atomic force microscopy observations. Local temperature of irradiated region has been estimated from the anti-Stokes/Stokes ratio of the Te modes intensity and it was found to be close or exceeding ZnTe melting point. Thus, the laser damage can be explained by the ablation process.

Zielony, E.; Placzek-Popko, E.; Henrykowski, A.; Gumienny, Z.; Kamyczek, P.; Jacak, J. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Nowakowski, P.; Karczewski, G. [Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw (Poland)

2012-09-15T23:59:59.000Z

365

Determination of the X(3872) Meson Quantum Numbers  

E-Print Network [OSTI]

The quantum numbers of the X(3872) meson are determined to be J[superscript PC]=1[superscript ++] based on angular correlations in B[superscript +]?X(3872)K[superscript +] decays, where X(3872)??[superscript +]?[superscript ...

Williams, Michael

366

Evidence of significant down-conversion in a Si-based solar cell using CuInS{sub 2}/ZnS core shell quantum dots  

SciTech Connect (OSTI)

We report on the increase of up to 37.5% in conversion efficiency of a Si-based solar cell after deposition of light-emitting Cd-free, CuInS{sub 2}/ZnS core shell quantum dots on the active area of the cell due to the combined effect of down-conversion and the anti- reflecting property of the dots. We clearly distinguished the effect of down-conversion from anti-reflection and estimated an enhancement of up to 10.5% in the conversion efficiency due to down-conversion.

Gardelis, Spiros, E-mail: S.Gardelis@imel.demokritos.gr; Nassiopoulou, Androula G. [NCSR Demokritos INN, Terma Patriarchou Grigoriou, Aghia Paraskevi, 15310 Athens (Greece)

2014-05-05T23:59:59.000Z

367

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network [OSTI]

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

368

Regular and irregular dynamics of Dirac-Weyl wavepackets in a mesoscopic quantum dot at the edge of topological insulator  

E-Print Network [OSTI]

The dynamics of Dirac-Weyl spin-polarized wavepackets driven by periodic electric field is considered for the electrons in a mesoscopic quantum dot formed at the edge of two-dimensional HgTe/CdTe topological insulator with Dirac-Weyl massless energy spectra, where the motion of carriers is less sensitive to disorder and impurity potentials. It is found that the interplay of strongly coupled spin and charge degrees of freedom creates the regimes of both regular and irregular dynamics with certain universal properties manifested both in the clean limit and in the presence of the moderate disorder. The disorder influence is predicted to enhance the in-plane spin relaxation, leading to possibility of establishing novel types of driven evolution in nanostructures formed in the topological insulators.

D. V. Khomitsky; A. A. Chubanov; A. A. Konakov

2015-01-06T23:59:59.000Z

369

Comparative electron paramagnetic resonance investigation of reduced graphene oxide and carbon nanotubes with different chemical functionalities for quantum dot attachment  

SciTech Connect (OSTI)

Electron paramagnetic resonance (EPR) spectroscopy has been applied to different chemically treated reduced graphene oxide (rGO) and multiwalled carbon nanotubes (CNTs). A narrow EPR signal is visible at g?=?2.0029 in both GO and CNT-Oxide from carbon-related dangling bonds. EPR signals became broader and of lower intensity after oxygen-containing functionalities were reduced and partially transformed into thiol groups to obtain thiol-functionalized reduced GO (TrGO) and thiol-functionalized CNT (CNT-SH), respectively. Additionally, EPR investigation of CdSe quantum dot-TrGO hybrid material reveals complete quenching of the TrGO EPR signal due to direct chemical attachment and electronic coupling. Our work confirms that EPR is a suitable tool to detect spin density changes in different functionalized nanocarbon materials and can contribute to improved understanding of electronic coupling effects in nanocarbon-nanoparticle hybrid nano-composites promising for various electronic and optoelectronic applications.

Pham, Chuyen V.; Krueger, Michael, E-mail: michael.krueger@fmf.uni-freiburg.de, E-mail: emre.erdem@physchem.uni-freiburg.de; Eck, Michael [Freiburg Materials Research Center (FMF), University of Freiburg, Stefan-Meier-Str. 21, 79104 Freiburg (Germany); Department of Microsystems Engineering (IMTEK), University of Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg (Germany); Weber, Stefan; Erdem, Emre, E-mail: michael.krueger@fmf.uni-freiburg.de, E-mail: emre.erdem@physchem.uni-freiburg.de [Institute of Physical Chemistry, University of Freiburg, Albertstr. 21, 79104 Freiburg (Germany)

2014-03-31T23:59:59.000Z

370

Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures  

SciTech Connect (OSTI)

We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel [National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101 (Philippines); Garcia, Alipio [Department of Physical Sciences, University of the Philippines, Baguio City 2600 (Philippines)

2009-06-08T23:59:59.000Z

371

Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots  

SciTech Connect (OSTI)

We have examined the origins of interlayer formation and misfit dislocation (MD) displacement in the vicinity of InAs/GaAs quantum dots (QDs). For QDs formed by the Stranski-Krastanov mode, regularly spaced MDs nucleate at the interface between the QD and the GaAs buffer layer. In the droplet epitaxy case, both In island formation and In-induced “nano-drilling” of the GaAs buffer layer are observed during In deposition. Upon annealing under As flux, the In islands are converted to InAs QDs, with an InGaAs interlayer at the QD/buffer interface. Meanwhile, MDs nucleate at the QD/interlayer interface.

Huang, S.; Kim, S. J.; Pan, X. Q. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Goldman, R. S., E-mail: rsgold@umich.edu [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2014-07-21T23:59:59.000Z

372

TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer  

SciTech Connect (OSTI)

It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

2008-01-01T23:59:59.000Z

373

Non-classical higher-order photon correlations with a quantum dot strongly coupled to a photonic-crystal nanocavity  

E-Print Network [OSTI]

We use the third- and fourth-order autocorrelation functions $g^{(3)}(\\tau_1,\\tau_2)$ and $g^{(4)}(\\tau_1,\\tau_2, \\tau_3)$ to detect the non-classical character of the light transmitted through a photonic-crystal nanocavity containing a strongly-coupled quantum dot probed with a train of coherent light pulses. We contrast the value of $g^{(3)}(0, 0)$ with the conventionally used $g^{(2)}(0)$ and demonstrate that in addition to being necessary for detecting two-photon states emitted by a low-intensity source, $g^{(3)}$ provides a more clear indication of the non-classical character of a light source. We also present preliminary data that demonstrates bunching in the fourth-order autocorrelation function $g^{(4)}(\\tau_1,\\tau_2, \\tau_3)$ as the first step toward detecting three-photon states.

Armand Rundquist; Michal Bajcsy; Arka Majumdar; Tomas Sarmiento; Kevin Fischer; Konstantinos G. Lagoudakis; Sonia Buckley; Alexander Y. Piggott; Jelena Vuckovic

2014-08-12T23:59:59.000Z

374

Blinking suppression of CdTe quantum dots on epitaxial graphene and the analysis with Marcus electron transfer  

SciTech Connect (OSTI)

We have prepared epitaxial graphene by a Si sublimation method from 4H-SiC. Single-particle spectroscopy of CdTe quantum dots (QDs) on epitaxial graphene covered with polyvinylpyrrolidone (PVP) or polyethylene glycol (PEG) showed the suppression of luminescence blinking and ?10 times decreased luminescence intensity as compared with those on a glass. The electronic coupling constant, H{sub 01}, between CdTe QDs and graphene was calculated to be (3.3?±?0.4)?×?10{sup 2?}cm{sup ?1} in PVP and (3.7?±?0.8)?×?10{sup 2?}cm{sup ?1} in PEG based on Marcus theory of electron transfer and Tang-Marcus model of blinking with statistical distribution.

Hirose, Takuya; Tamai, Naoto, E-mail: tamai@kwansei.ac.jp [Department of Chemistry, School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337 (Japan); Kutsuma, Yasunori; Kurita, Atsusi; Kaneko, Tadaaki [Department of Physics, School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337 (Japan)

2014-08-25T23:59:59.000Z

375

Near-infrared InN quantum dots on high-In composition InGaN  

SciTech Connect (OSTI)

We report the growth of InN quantum dots (QDs) on thick InGaN layers with high In composition (>50%) by molecular beam epitaxy. Optimized growth conditions are identified for the InGaN layers at reduced growth temperature and increased active N flux resulting in minimized phase separation and defect generation. The InN QDs grown on top of the optimized InGaN layer exhibit small size, high density, and photoluminescence up to room temperature. The InN/InGaN QDs reveal excellent potential for intermediate band solar cells with the InGaN and InN QD bandgap energies tuned to the best match of absorption to the solar spectrum.

Soto Rodriguez, Paul E. D.; Gomez, Victor J.; Kumar, Praveen; Calleja, Enrique; Noetzel, Richard [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM), Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)] [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM), Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

2013-04-01T23:59:59.000Z

376

Influence of Gaussian white noise on the frequency-dependent first nonlinear polarizability of doped quantum dot  

SciTech Connect (OSTI)

We investigate the profiles of diagonal components of frequency-dependent first nonlinear (?{sub xxx} and ?{sub yyy}) optical response of repulsive impurity doped quantum dots. We have assumed a Gaussian function to represent the dopant impurity potential. This study primarily addresses the role of noise on the polarizability components. We have invoked Gaussian white noise consisting of additive and multiplicative characteristics (in Stratonovich sense). The doped system has been subjected to an oscillating electric field of given intensity, and the frequency-dependent first nonlinear polarizabilities are computed. The noise characteristics are manifested in an interesting way in the nonlinear polarizability components. In case of additive noise, the noise strength remains practically ineffective in influencing the optical responses. The situation completely changes with the replacement of additive noise by its multiplicative analog. The replacement enhances the nonlinear optical response dramatically and also causes their maximization at some typical value of noise strength that depends on oscillation frequency.

Ganguly, Jayanta [Department of Chemistry, Brahmankhanda Basapara High School, Basapara, Birbhum 731215, West Bengal (India); Ghosh, Manas, E-mail: pcmg77@rediffmail.com [Department of Chemistry, Physical Chemistry Section, Visva Bharati University, Santiniketan, Birbhum 731 235, West Bengal (India)

2014-05-07T23:59:59.000Z

377

Self-interaction-free density-functional theoretical study of the electronic structure of spherical and vertical quantum dots  

E-Print Network [OSTI]

ca qu T nte pu ef pt pro si sc st em l n an d ith r ity along the vertical direction. Due to such strong confine- PHYSICAL REVIEW B, VOLUME 63, 045317atoms. The number of electrons in a quantum dot N can be controlled experimentally, allowing..., the total energy of a 3D spherical har- monic oscillator is Enrlm5S 2nr1l1 3 2 Dv’5S N1 3 2 Dv’ , ~40! where nr50,1,2,3, . . . , and N52nr1l . We use the desig- nation (nr ,l) to denote the energy level with the radial quan- tum numbers nr and the orbital...

Jiang, T. F.; Tong, Xiao-Min; Chu, Shih-I

2001-01-09T23:59:59.000Z

378

Structural and orientation effects on electronic energy transfer between silicon quantum dots with dopants and with silver adsorbates  

SciTech Connect (OSTI)

Starting from the atomic structure of silicon quantum dots (QDs), and utilizing ab initio electronic structure calculations within the Förster resonance energy transfer (FRET) treatment, a model has been developed to characterize electronic excitation energy transfer between QDs. Electronic energy transfer rates, K{sub EET}, between selected identical pairs of crystalline silicon quantum dots systems, either bare, doped with Al or P, or adsorbed with Ag and Ag{sub 3}, have been calculated and analyzed to extend previous work on light absorption by QDs. The effects of their size and relative orientation on energy transfer rates for each system have also been considered. Using time-dependent density functional theory and the hybrid functional HSE06, the FRET treatment was employed to model electronic energy transfer rates within the dipole-dipole interaction approximation. Calculations with adsorbed Ag show that: (a) addition of Ag increases rates up to 100 times, (b) addition of Ag{sub 3} increases rates up to 1000 times, (c) collinear alignment of permanent dipoles increases transfer rates by an order of magnitude compared to parallel orientation, and (d) smaller QD-size increases transfer due to greater electronic orbitals overlap. Calculations with dopants show that: (a) p-type and n-type dopants enhance energy transfer up to two orders of magnitude, (b) surface-doping with P and center-doping with Al show the greatest rates, and (c) K{sub EET} is largest for collinear permanent dipoles when the dopant is on the outer surface and for parallel permanent dipoles when the dopant is inside the QD.

Vinson, N.; Freitag, H.; Micha, D. A., E-mail: micha@qtp.ufl.edu [Quantum Theory Project, Departments of Chemistry and Physics, University of Florida, Gainesville, Florida 32611 (United States)

2014-06-28T23:59:59.000Z

379

Suppression of thermal carrier escape and efficient photo-carrier generation by two-step photon absorption in InAs quantum dot intermediate-band solar cells using a dot-in-well structure  

SciTech Connect (OSTI)

We investigated the effects of an increase in the barrier height on the enhancement of the efficiency of two-step photo-excitation in InAs quantum dot (QD) solar cells with a dot-in-well structure. Thermal carrier escape of electrons pumped in QD states was drastically reduced by sandwiching InAs/GaAs QDs with a high potential barrier of Al{sub 0.3}Ga{sub 0.7}As. The thermal activation energy increased with the introduction of the barrier. The high potential barrier caused suppression of thermal carrier escape and helped realize a high electron density in the QD states. We observed efficient two-step photon absorption as a result of the high occupancy of the QD states at room temperature.

Asahi, S.; Teranishi, H.; Kasamatsu, N.; Kada, T.; Kaizu, T.; Kita, T. [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan)

2014-08-14T23:59:59.000Z

380

Quasi-bound states and continuum absorption background of polar Al{sub 0.5}Ga{sub 0.5}N/GaN quantum dots  

SciTech Connect (OSTI)

A theoretical interpretation of the photoluminescence excitation spectra of self-organized polar GaN/(Al,Ga)N quantum dots is presented. A numerical method assuming a realistic shape of the dots and including the built-in electric field effects is developed to calculate their energy structure and hence their optical absorption. The electron and hole spectra show the existence of a set of quasi-bound states that does not originate from the wetting layer and plays a crucial role in the observed absorption spectrum of the GaN/(Al,Ga)N dots. Transitions involving these quasi-bound states and wetting layer states give a sufficient explanation for the observed continuum absorption background. The properties of this absorption band, especially its extension, depend strongly on the dot's size. Our simulation provides a natural explanation of the experimental luminescence excitation spectra of ensembles of dots of different heights. Our theoretical model can be convenient for future optical studies including systems with more complicated potentials.

Elmaghraoui, D., E-mail: elmaghraouidonia@yahoo.fr; Triki, M. [Laboratoire de physique de la matière condensé, Faculté des sciences de Tunis, Campus universitaire 2092 El Manar (Tunisia); Jaziri, S. [Laboratoire de physique de la matière condensé, Faculté des sciences de Tunis, Campus universitaire 2092 El Manar (Tunisia); Laboratoire de Physique des Matériaux, Faculté des Sciences de Bizerte 7021 Jarzouna (Tunisia); Leroux, M.; Brault, J. [Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue B. Gregory, 06560 Valbonne (France)

2014-07-07T23:59:59.000Z

Note: This page contains sample records for the topic "determination quantum dot" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Infrared spectroscopy of lattice vibrations in ZnTe/CdTe superlattices with quantum dots on the GaAs substrate with the ZnTe buffer layer  

SciTech Connect (OSTI)

The results of the analysis of the infrared lattice reflectance spectra of multiperiod ZnTe/CdTe superlattices with CdTe quantum dots are reported. The samples are grown by molecular beam epitaxy on the GaAs substrate with the ZnTe buffer layer. Due to the large number of periods of the superlattices, it is possible to observe CdTe-like vibration modes in the quantum dots, i.e., the dislocation-free stressed islands formed during the growth due to relaxation of elastic stresses between the ZnTe and CdTe layers are markedly different in their lattice parameters. From the frequency shifts of the CdTe- and ZnTe-like vibration modes with respect to the corresponding modes in the unstressed materials, it is possible to estimate the level of elastic stresses.

Kozyrev, S. P. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)], E-mail: skozyrev@sci.lebedev.ru

2009-03-15T23:59:59.000Z

382

Optical Stark Effect and Dressed Exciton States in a Mn-Doped CdTe Quantum Dot C. Le Gall,1  

E-Print Network [OSTI]

Optical Stark Effect and Dressed Exciton States in a Mn-Doped CdTe Quantum Dot C. Le Gall,1 A spin in a CdTe QD, like the strain- induced magnetic anisotropy or hyperfine coupling to the nuclei in this study is grown on a ZnTe substrate and contains CdTe QDs. A 6.5 monolayer thick CdTe layer is deposited

Boyer, Edmond

383

Raman E{sub 1} and E{sub 1} + {delta}{sub 1} resonances in a system of unstrained germanium quantum dots  

SciTech Connect (OSTI)

The positions and shapes of the Raman E{sub 1} and E{sub 1} + {delta}{sub 1} resonances of optical phonons are studied as functions of the size of unstrained germanium quantum dots. The quantum dots are grown by molecular-beam epitaxy in GaAs/ZnSe/Ge/ZnSe structures on GaAs(111) wafers. The positions of the E{sub 1} and E{sub 1} + {delta}{sub 1} resonances are found to shift by at most 0.3 eV. This shift is shown to be well described in terms of a cylindrical model using the quantization of the spectrum of bulk electron-hole states in germanium that form an exciton in a two-dimensional critical point. The fact that the peaks of the E{sub 1} and E{sub 1} + {delta}{sub 1} resonances appear separately has been detected for the first time, and it is related to the transformation of the interband density of states into a delta function because of spectrum quantization. An increase in the resonance amplitudes in quantum dots as compared to the bulk case is related to the degeneracy multiplicity of the exciton state in the (111) direction.

Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Teys, S. A.; Suprun, S. P. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Division (Russian Federation)

2006-05-15T23:59:59.000Z

384

Photocurrent spectrum study of a quantum dot single-photon detector based on resonant tunneling effect with near-infrared response  

SciTech Connect (OSTI)

We present the photocurrent spectrum study of a quantum dot (QD) single-photon detector using a reset technique which eliminates the QD's “memory effect.” By applying a proper reset frequency and keeping the detector in linear-response region, the detector's responses to different monochromatic light are resolved which reflects different detection efficiencies. We find the reset photocurrent tails up to 1.3??m wavelength and near-infrared (?1100?nm) single-photon sensitivity is demonstrated due to interband transition of electrons in QDs, indicating the device a promising candidate both in quantum information applications and highly sensitive imaging applications operating in relative high temperatures (>80?K).

Weng, Q. C. [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241 (China); An, Z. H., E-mail: anzhenghua@fudan.edu.cn, E-mail: luwei@mail.sitp.ac.cn [State Key Laboratory of Surface Physics and Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Xiong, D. Y.; Zhu, Z. Q. [Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241 (China); Zhang, B.; Chen, P. P.; Li, T. X.; Lu, W., E-mail: anzhenghua@fudan.edu.cn, E-mail: luwei@mail.sitp.ac.cn [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)

2014-07-21T23:59:59.000Z

385

The decay of quantum correlations between quantum dot spin qubits and the characteristics of its magnetic field dependence  

E-Print Network [OSTI]

We address the question of the role of quantum correlations beyond entanglement in context of quantum magnetometry. To this end, we study the evolution of the quantum discord, measured by the rescaled discord, of two electron-spin qubits interacting with an environment of nuclear spins via the hyperfine interaction. We have found that depending on the initial state the evolution can or cannot display indifferentiability points in its time-evolution (due to the energy conservation law), as well as non-trivial dependence on inter-qubit phase. Furthermore, we show that for initial Bell states, quantum correlations display a strong magnetic-field sensitivity which can be utilized for decoherence-driven measurements of the external magnetic field. The potential discord-based measurement is sensitive to a wider range of magnetic field values than the entanglement-based measurement. In principle, entanglement is not a necessary resource for reliable decoherence-driven measurement, while the presence of quantum correlations beyond entanglement is.

Pawe? Mazurek; Katarzyna Roszak; Pawe? Horodecki

2014-03-19T23:59:59.000Z

386

Theoretical study of intraband optical transitions in conduction band of dot-in-a-well system  

SciTech Connect (OSTI)

We study numerically absorption optical spectra of n-doped InAs/In{sub 015}Ga{sub 085}As/GaAs quantum dot-in-a-well systems. The absorption spectra are mainly determined by the size of a quantum dot and have weak dependence on the thickness of quantum well and position of the dot in a well. The dot-in-a-well system is sensitive to both in-plane and out-of-plane polarizations of the incident light with much stronger absorption intensities for the in-plane-polarized light. The absorption spectrum of in-plane-polarized light has also a multi-peak structure with two or three peaks of comparable intensities, while the absorption spectrum of out-of-plane polarized light has a single well-pronounced peak.

Chaganti, Venkata R.; Apalkov, Vadym [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30302 USA. (Georgia)] [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30302 USA. (Georgia)

2014-02-15T23:59:59.000Z

387

Cadmium sulfate and CdTe-quantum dots alter DNA repair in zebrafish (Danio rerio) liver cells  

SciTech Connect (OSTI)

Increasing use of quantum dots (QDs) makes it necessary to evaluate their toxicological impacts on aquatic organisms, since their contamination of surface water is inevitable. This study compares the genotoxic effects of ionic Cd versus CdTe nanocrystals in zebrafish hepatocytes. After 24 h of CdSO{sub 4} or CdTe QD exposure, zebrafish liver (ZFL) cells showed a decreased number of viable cells, an accumulation of Cd, an increased formation of reactive oxygen species (ROS), and an induction of DNA strand breaks. Measured levels of stress defense and DNA repair genes were elevated in both cases. However, removal of bulky DNA adducts by nucleotide excision repair (NER) was inhibited with CdSO{sub 4} but not with CdTe QDs. The adverse effects caused by acute exposure of CdTe QDs might be mediated through differing mechanisms than those resulting from ionic cadmium toxicity, and studying the effects of metallic components may be not enough to explain QD toxicities in aquatic organisms. - Highlights: • Both CdSO{sub 4} and CdTe QDs lead to cell death and Cd accumulation. • Both CdSO{sub 4} and CdTe QDs induce cellular ROS generation and DNA strand breaks. • Both CdSO{sub 4} and CdTe QDs induce the expressions of stress defense and DNA repair genes. • NER repair capacity was inhibited with CdSO{sub 4} but not with CdTe QDs.

Tang, Song; Cai, Qingsong [The Institute of Environmental and Human Health, Texas Tech University, Lubbock, TX 79416 (United States); Chibli, Hicham [Department of Biomedical Engineering, McGill University, Montréal, QC H3A 2B4 (Canada); Allagadda, Vinay [The Institute of Environmental and Human Health, Texas Tech University, Lubbock, TX 79416 (United States); Nadeau, Jay L. [Department of Biomedical Engineering, McGill University, Montréal, QC H3A 2B4 (Canada); Mayer, Gregory D., E-mail: greg.mayer@ttu.edu [The Institute of Environmental and Human Health, Texas Tech University, Lubbock, TX 79416 (United States)

2013-10-15T23:59:59.000Z

388

Amorphous Ge quantum dots embedded in SiO{sub 2} formed by low energy ion implantation  

SciTech Connect (OSTI)

Under ultrahigh vacuum conditions, extremely small Ge nanodots embedded in SiO{sub 2}, i.e., Ge-SiO{sub 2} quantum dot composites, have been formed by ion implantation of {sup 74}Ge{sup +} isotope into (0001) Z-cut quartz at a low kinetic energy of 9 keV using varying implantation temperatures. Transmission electron microscopy (TEM) images and micro-Raman scattering show that amorphous Ge nanodots are formed at all temperatures. The formation of amorphous Ge nanodots is different from reported crystalline Ge nanodot formation by high energy ion implantation followed by a necessary high temperature annealing process. At room temperature, a confined spatial distribution of the amorphous Ge nanodots can be obtained. Ge inward diffusion was found to be significantly enhanced by a synergetic effect of high implantation temperature and preferential sputtering of surface oxygen, which induced a much wider and deeper Ge nanodot distribution at elevated implantation temperature. The bimodal size distribution that is often observed in high energy implantation was not observed in the present study. Cross-sectional TEM observation and the depth profile of Ge atoms in SiO{sub 2} obtained from x-ray photoelectron spectra revealed a critical Ge concentration for observable amorphous nanodot formation. The mechanism of formation of amorphous Ge nanodots and the change in spatial distribution with implantation temperature are discussed.

Zhao, J. P. [Texas Center for Superconductivity, University of Houston, Houston, Texas 77204 (United States); Department of Physics, University of Houston, Houston, Texas 77204 (United States); Department of Chemistry, University of Houston, Houston, Texas 77204 (United States); Huang, D. X.; Jacobson, A. J. [Texas Center for Superconductivity, University of Houston, Houston, Texas 77204 (United States); Department of Chemistry, University of Houston, Houston, Texas 77204 (United States); Chen, Z. Y.; Makarenkov, B. [Department of Chemistry, University of Houston, Houston, Texas 77204 (United States); Chu, W. K. [Texas Center for Superconductivity, University of Houston, Houston, Texas 77204 (United States); Department of Physics, University of Houston, Houston, Texas 77204 (United States); Bahrim, B. [Department of Chemistry and Physics, Lamar University, Beaumont, Texas 77710 (United States); Rabalais, J. W. [Department of Chemistry, University of Houston, Houston, Texas 77204 (United States); Department of Chemistry and Physics, Lamar University, Beaumont, Texas 77710 (United States)

2008-06-15T23:59:59.000Z

389

Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice  

SciTech Connect (OSTI)

This paper presents an original integration of polycrystalline SiGe-based quantum dots superlattices (QDSL) into Thermoelectric (TE) planar infrared microsensors (?SIR) fabricated using a CMOS technology. The nanostructuration in QDSL results into a considerably reduced thermal conductivity by a factor up to 10 compared to the one of standard polysilicon layers that are usually used for IR sensor applications. A presentation of several TE layers, QDSL and polysilicon, is given before to describe the fabrication of the thermopile-based sensors. The theoretical values of the sensitivity to irradiance of ?SIR can be predicted thanks to an analytical model. These findings are used to interpret the experimental measurements versus the nature of the TE layer exploited in the devices. The use of nanostructured QDSL as the main material in ?SIR thermopile has brought a sensitivity improvement of about 28% consistent with theoretical predictions. The impact of QDSL low thermal conductivity is damped by the contribution of the thermal conductivity of all the other sub-layers that build up the device.

Ziouche, K., E-mail: katir.ziouche@iemn.univ-lille1.fr, E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Bougrioua, Z., E-mail: katir.ziouche@iemn.univ-lille1.fr, E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Lejeune, P.; Lasri, T.; Leclercq, D. [IEMN, Institute of Electronics, Microelectronics and Nanotechnology, CNRS and Lille 1 University, F-59652 Villeneuve d'Ascq (France); Savelli, G.; Hauser, D.; Michon, P.-M. [CEA, LITEN, Thermoelectricity Laboratory, F-38054 Grenoble (France)

2014-07-28T23:59:59.000Z

390

Colloidal Quantum Dot Light-Emitting Diodes Employing Phosphorescent Small Organic Molecules as Efficient Exciton  

E-Print Network [OSTI]

engineer, the potential energy transfer pumping scheme. Only Zhang et al. reported an enhancement enhancement factor in the external quantum efficiency over the conventional QLED structure, in which energy as Efficient Exciton Harvesters Evren Mutlugun,,,§, Burak Guzelturk,,§, Agus Putu Abiyasa,§, Yuan Gao,§ Xiao

Demir, Hilmi Volkan

391

Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)  

SciTech Connect (OSTI)

We describe InAs quantum dot creation in InAs/GaAsSb barrier structures grown on GaAs (001) wafers by molecular beam epitaxy. The structures consist of 20-nm-thick GaAsSb barrier layers with Sb content of 8%, 13%, 15%, 16%, and 37% enclosing 2 monolayers of self-assembled InAs quantum dots. Transmission electron microscopy and X-ray diffraction results indicate the onset of relaxation of the GaAsSb layers at around 15% Sb content with intersected 60° dislocation semi-loops, and edge segments created within the volume of the epitaxial structures. 38% relaxation of initial elastic stress is seen for 37% Sb content, accompanied by the creation of a dense net of dislocations. The degradation of In surface migration by these dislocation trenches is so severe that quantum dot formation is completely suppressed. The results highlight the importance of understanding defect formation during stress relaxation for quantum dot structures particularly those with larger numbers of InAs quantum-dot layers, such as those proposed for realizing an intermediate band material.

Bremner, S. P. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052 (Australia)] [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052 (Australia); Ban, K.-Y.; Faleev, N. N.; Honsberg, C. B. [School of Electrical, Computer and Energy Engineering, Ira A. Fulton Schools of Engineering, Solar Power Lab, Arizona State University, Tempe, Arizona 85287 (United States)] [School of Electrical, Computer and Energy Engineering, Ira A. Fulton Schools of Engineering, Solar Power Lab, Arizona State University, Tempe, Arizona 85287 (United States); Smith, D. J. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)] [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

2013-09-14T23:59:59.000Z

392

Theoretical and Experimental Examination of the Intermediate-Band Concept for Strain-Balanced (In,Ga)As/Ga(As,P) Quantum Dot Solar Cells  

SciTech Connect (OSTI)

The intermediate-band solar cell (IBSC) concept has been recently proposed to enhance the current gain from the solar spectrum while maintaining a large open-circuit voltage. Its main idea is to introduce a partially occupied intermediate band (IB) between the valence band (VB) and conduction band (CB) of the semiconductor absorber, thereby increasing the photocurrent by the additional VB {yields} IB and IB {yields} CB absorptions. The confined electron levels of self-assembled quantum dots (QDs) were proposed as potential candidates for the implementation of such an IB. Here we report experimental and theoretical investigations on In{sub y}Ga{sub 1-y}As dots in a GaAs{sub 1-x}P{sub x} matrix, examining its suitability for acting as IBSCs. The system has the advantage of allowing strain symmetrization within the structure, thus enabling the growth of a large number of defect-free QD layers, despite the significant size mismatch between the dot material and the surrounding matrix. We examine the various conditions related to the optimum functionality of the IBSC, in particular those connected to the optical and electronic properties of the system. We find that the intensity of absorption between QD-confined electron states and host CB is weak because of their localized-to-delocalized character. Regarding the position of the IB within the matrix band gap, we find that, whereas strain symmetrization can indeed permit growth of multiple dot layers, the current repertoire of GaAs{sub 1-x}P{sub x} barrier materials, as well as In{sub y}Ga{sub 1-y} As dot materials, does not satisfy the ideal energetic locations for the IB. We conclude that other QD systems must be considered for QD-IBSC implementations.

Popescu, V.; Bester, G.; Hanna, M. C.; Norman, A. G.; Zunger, A.

2008-11-01T23:59:59.000Z

393

Enhancing structural transition by carrier and quantum confinement: Stabilization of cubic InN quantum dots by Mn incorporation  

SciTech Connect (OSTI)

We demonstrate in this work controllable synthesis of cubic InN nanocrystals through Mn doping. We show that the pristine nanocrystal has the wurtzite structure, but can be converted into the zinc-blende (ZB) structure when it is doped with Mn. Our first-principles calculations show that the phase transition is caused by the stronger p-d coupling between the host p valence state and the impurity d level in the ZB structure, which makes the hole generation in the ZB structure easier. Quantum confinement in the nanocrystals further enhanced this effect. This observation lays an important foundation for defects control of crystal phases.

Meng, Xiuqing; Wu, Fengmin [Zhejiang Normal University, Jinhua, Zhejiang Province 321004 (China)] [Zhejiang Normal University, Jinhua, Zhejiang Province 321004 (China); Chen, Zhanghui; Li, Shu-Shen [State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)] [State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Chen, Zhuo [Department of Physics, Beijing Institute of Technology, Beijing 100081 (China)] [Department of Physics, Beijing Institute of Technology, Beijing 100081 (China); Li, Jingbo, E-mail: jbli@semi.ac.cn, E-mail: swei@nrel.gov [Zhejiang Normal University, Jinhua, Zhejiang Province 321004 (China) [Zhejiang Normal University, Jinhua, Zhejiang Province 321004 (China); State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Wu, Junqiao [Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States)] [Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Wei, Su-Huai, E-mail: jbli@semi.ac.cn, E-mail: swei@nrel.gov [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

2013-12-16T23:59:59.000Z

394

Quantum dot immunoassays in renewable surface column and 96-well plate  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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395

Quantum-Dot-Based Electrochemical Immunoassay for High-Throughput Screening  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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396

Quantum-Dots Based Electrochemical Immunoassay of Interleukin-1&alpha;. |  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 -the Mid-Infrared at 278, 298, and 323 K. |Quantum Field Theory &formats

397

Photoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films  

SciTech Connect (OSTI)

Silicon quantum dots (QDs) embedded in hydrogenated amorphous Si-rich silicon carbide (?-SiC:H) thin films were realized by plasma-enhanced chemical vapor deposition process and post-annealing. Fluorescence spectroscopy was used to characterize the room-temperature photoluminescence properties. X-ray photoelectron spectroscopy was used to analyze the element compositions and bonding configurations. Ultraviolet visible spectroscopy, Raman scattering, and high-resolution transmission electron microscopy were used to display the microstructural properties. Photoluminescence measurements reveal that there are six emission sub-bands, which behave in different ways. The peak wavelengths of sub-bands P1, P2, P3, and P6 are pinned at about 425.0, 437.3, 465.0, and 591.0?nm, respectively. Other two sub-bands, P4 is red-shifted from 494.6 to 512.4?nm and P5 from 570.2 to 587.8?nm with temperature increasing from 600 to 900?°C. But then are both blue-shifted, P4 to 500.2?nm and P5 to 573.8?nm from 900 to 1200?°C. The X-ray photoelectron spectroscopy analysis shows that the samples are in Si-rich nature, Si-O and Si-N bonds consumed some silicon atoms. The structure characterization displays that a separation between silicon phase and SiC phase happened; amorphous and crystalline silicon QDs synthesized with increasing the annealing temperature. P1, P2, P3, and P6 sub-bands are explained in terms of defect-related emission, while P4 and P5 sub-bands are explained in terms of quantum confinement effect. A correlation between the peak wavelength shift, as well as the integral intensity of the spectrum and crystallization of silicon QDs is supposed. These results help clarify the probable luminescence mechanisms and provide the possibility to optimize the optical properties of silicon QDs in Si-rich ?-SiC: H materials.

Wen, Guozhi [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); School of Electronic and Electrical Engineering, Wuhan Polytechnic University, Wuhan, Hubei 430023 (China); Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn; Wen, Xixin; Liao, Wugang [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)

2014-04-28T23:59:59.000Z

398

Effects of n-type doping in InAs/GaAs quantum dot layer on current-voltage characteristic of intermediate band solar cells  

E-Print Network [OSTI]

We investigated the current-voltage characteristic of InAs/GaAs quantum dot intermediate band solar cells (QD IBSCs) with different n-type doping density in the QD layer. The n-type doping evidently increases the open circuit voltage, meanwhile decreases the short circuit current density, and leads to the conversion efficiency approaching that of the control solar cell, that is the major role of n-type doping is to suppress the effects of QDs on the current-voltage characteristic. Our model adopts practical parameters for simulation rather than those from detailed balanced method, so that the results in our simulation are not overestimated.

Gu, Yong-Xian; Ji, Hai-Ming; Xu, Peng-Fei; Yang, Tao

2013-01-01T23:59:59.000Z

399

Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition  

SciTech Connect (OSTI)

Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots (QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the droplet crystallization through the introduction of group V elements. Here, we report that, in the droplet epitaxy of InAs/GaAs(001) QDs using metal-organic chemical vapor deposition, significant elemental diffusion from the substrate to In droplets occurs, resulting in the formation of In(Ga)As crystals, before As flux is provided. The supply of As flux suppresses the further elemental diffusion from the substrate and promotes surface migration, leading to large island formation with a low island density.

Chen, Z. B.; Chen, B.; Wang, Y. B.; Liao, X. Z., E-mail: xiaozhou.liao@sydney.edu.au [School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006 (Australia); Lei, W. [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Perth, WA 6009 (Australia); Tan, H. H.; Jagadish, C. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Zou, J. [Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane, QLD 4072 (Australia); Ringer, S. P. [School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006 (Australia); Australian Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, NSW 2006 (Australia)

2014-01-13T23:59:59.000Z

400

Control of the direction and rate of nuclear spin flips in InAs quantum dots using detuned optical pulse trains  

E-Print Network [OSTI]

We find that detuning an optical pulse train from electronic transitions in quantum dots controls the direction of nuclear spin flips. The optical pulse train generates electron spins that precess about an applied magnetic field, with a spin component parallel to the field only for detuned pulses. This component leads to asymmetry in the nuclear spin flips, providing a way to produce a stable and precise value of the nuclear spin polarization. This effect is observed using two-color, time-resolved Faraday rotation and ellipticity.

S. G. Carter; A. Shabaev; Sophia E. Economou; T. A. Kennedy; A. S. Bracker; T. L. Reinecke

2009-01-16T23:59:59.000Z

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401

Surface InP/In{sub 0.48}Ga{sub 0.52}P quantum dots: Carrier recombination dynamics and their interaction with fluorescent dyes  

SciTech Connect (OSTI)

We describe the properties and carrier dynamics of surface InP quantum dots (QDs) on In{sub 0.48}Ga{sub 0.52}P, lattice-matched to GaAs (100). The structures were grown using gas-source molecular beam epitaxy. The average height and lateral size of the dots are in the range of 2–6 and 30–50 nm, respectively. The photoluminescence of the surface dots peaks between 750 and 830 nm, depending on the growth conditions, and is red-shifted compared to the emission of the capped QDs grown under similar conditions. The integrated photoluminescence intensity is comparable to that of the capped QDs. The decay time of both surface and capped QDs is around 1 ns at 15 K. The strong luminescence of surface QDs is explained by the effect of acting vacuum/air as an effective barrier and saturated surface states. Enhancement of the QDs luminescence is observed for the samples coated with a fluorescent dye.

Hestroffer, Karine [Institute of Physics, Humboldt–University Berlin, 12489 Berlin (Germany) [Institute of Physics, Humboldt–University Berlin, 12489 Berlin (Germany); Max Born Institute for Nonlinear Optics and Ultrafast Spectroscopy, 2A Max–Born–Str., 12489 Berlin (Germany); CEA–CNRS group “Nanophysique et Semiconducteurs,” Institut Néel/CNRS–Univ. J. Fourier and CEA Grenoble, INAC, SP2M, 17 rue des Martyrs, 38 054 Grenoble (France); Braun, Robert; Ugur, Asli; Hackbarth, Steffen; Röder, Beate; Hatami, Fariba [Institute of Physics, Humboldt–University Berlin, 12489 Berlin (Germany)] [Institute of Physics, Humboldt–University Berlin, 12489 Berlin (Germany); Tomm, Jens W. [Max Born Institute for Nonlinear Optics and Ultrafast Spectroscopy, 2A Max–Born–Str., 12489 Berlin (Germany)] [Max Born Institute for Nonlinear Optics and Ultrafast Spectroscopy, 2A Max–Born–Str., 12489 Berlin (Germany)

2013-10-28T23:59:59.000Z

402

IR spectroscopy of lattice vibrations and comparative analysis of the ZnTe/CdTe quantum-dot superlattices on the GaAs substrate and with the ZnTe and CdTe buffer layers  

SciTech Connect (OSTI)

A comparative analysis of multiperiod ZnTe/CdTe superlattices with the CdTe quantum dots grown by molecular beam epitaxy on the GaAs substrate with the ZnTe and CdTe buffer layers is carried out. The elastic-stress-induced shifts of eigenfrequencies of the modes of the CdTe- and ZnTe-like vibrations of materials forming similar superlattices but grown on different buffer ZnTe and CdTe layers are compared. The conditions of formation of quantum dots in the ZnTe/CdTe superlattices on the ZnTe and CdTe buffer layers differ radically.

Kozyrev, S. P. [Russian Academy of Sciences, Lebedev Institute of Physics (Russian Federation)], E-mail: skozyrev@sci.lebedev.ru

2009-07-15T23:59:59.000Z

403

Temperature-dependent measurement of Auger recombination in In{sub 0.40}Ga{sub 0.60}N/GaN red-emitting (??=?630?nm) quantum dots  

SciTech Connect (OSTI)

We have derived the Auger recombination coefficients, as a function of temperature, for In{sub 0.4}Ga{sub 0.6}N/GaN self-organized quantum dots from large-signal modulation measurements made on lasers in which the quantum dots form the gain media. The value of C{sub a}?=?1.3?±0.2 ×?10{sup ?31}?cm{sup 6}?s{sup ?1} at room temperature and the coefficient decreases with increase of temperature.

Frost, Thomas; Banerjee, Animesh; Jahangir, Shafat; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2014-02-24T23:59:59.000Z

404

Size dependent optical properties of Si quantum dots in Si-rich nitride/Si{sub 3}N{sub 4} superlattice synthesized by magnetron sputtering  

SciTech Connect (OSTI)

A spectroscopic ellipsometry compatible approach is reported for the optical study of Si quantum dots (QDs) in Si-rich nitride/silicon nitride (SRN/Si{sub 3}N{sub 4}) superlattice, which based on Tauc-Lorentz model and Bruggeman effective medium approximation. It is shown that the optical constants and dielectric functions of Si QDs are strongly size dependent. The suppressed imaginary dielectric function of Si QDs exhibits a single broad peak analogous to amorphous Si, which centered between the transition energies E{sub 1} and E{sub 2} of bulk crystalline Si and blue shifted toward E{sub 2} as the QD size reduced. A bandgap expansion observed by the TL model when the size of Si QD reduced is in good agreement with the PL measurement. The bandgap expansion with the reduction of Si QD size is well supported by the first-principles calculations based on quantum confinement.

So, Yong-Heng; Huang, Shujuan; Conibeer, Gavin; Green, Martin A. [ARC Photovoltaics Centre of Excellence, University of New South Wales, Sydney, New South Wales 2052 (Australia); Gentle, Angus [Physics and Advanced Materials, University of Technology Sydney, P. O. Box 123, Broadway, New South Wales 2007 (Australia)

2011-03-15T23:59:59.000Z

405

The effect of photo-generated carriers on the spectral diffusion of a quantum dot coupled to a photonic crystal cavity  

E-Print Network [OSTI]

We experimentally observe the effect of photo-generated carriers on the spectral diffusion of a quantum dot (QD) coupled to a photonic crystal (PC) cavity. In this system, spectral diffusion arises in part from charge fluctuations on the etched surfaces of the PC. We find that these fluctuations may be suppressed by photo-generated carriers, leading to a reduction of the measured QD linewidth by a factor of ~2 compared to the case where the photo-generated carriers are not present. This result demonstrates a possible means of countering the effects of spectral diffusion in QD-PC cavity systems and thus may be useful for quantum information applications where narrow QD linewidths are desired.

Arka Majumdar; Erik D. Kim; Jelena Vuckovic

2011-07-24T23:59:59.000Z

406

Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures  

SciTech Connect (OSTI)

Efficient semiconductor optical emitters in the deep-ultraviolet spectral window are encountering some of the most deep rooted problems of semiconductor physics. In III-Nitride heterostructures, obtaining short-wavelength photon emission requires the use of wide bandgap high Al composition AlGaN active regions. High conductivity electron (n-) and hole (p-) injection layers of even higher bandgaps are necessary for electrical carrier injection. This approach requires the activation of very deep dopants in very wide bandgap semiconductors, which is a difficult task. In this work, an approach is proposed and experimentally demonstrated to counter the challenges. The active region of the heterostructure light emitting diode uses ultrasmall epitaxially grown GaN quantum dots. Remarkably, the optical emission energy from GaN is pushed from 365?nm (3.4?eV, the bulk bandgap) to below 240?nm (>5.2?eV) because of extreme quantum confinement in the dots. This is possible because of the peculiar bandstructure and band alignments in the GaN/AlN system. This active region design crucially enables two further innovations for efficient carrier injection: Tunnel injection of carriers and polarization-induced p-type doping. The combination of these three advances results in major boosts in electroluminescence in deep-ultraviolet light emitting diodes and lays the groundwork for electrically pumped short-wavelength lasers.

Verma, Jai, E-mail: jverma@nd.edu; Islam, S. M.; Protasenko, Vladimir; Kumar Kandaswamy, Prem; Xing, Huili; Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

2014-01-13T23:59:59.000Z

407

Theory of ultrafast photoinduced electron transfer from a bulk semiconductor to a quantum dot  

SciTech Connect (OSTI)

This paper describes analytical and numerical results from a model Hamiltonian method applied to electron transfer (ET) from a quasicontinuum (QC) of states to a set of discrete states, with and without a mediating bridge. Analysis of the factors that determine ET dynamics yields guidelines for achieving high-yield electron transfer in these systems, desired for instance for applications in heterogeneous catalysis. These include the choice of parameters of the laser pulse that excites the initial state into a continuum electronic wavepacket and the design of the coupling between the bridge molecule and the donor and acceptor. The vibrational mode on a bridging molecule between donor and acceptor has an influence on the yield of electron transfer via Franck-Condon factors, even in cases where excited vibrational states are only transiently populated. Laser-induced coherence of the initial state as well as energetic overlap is crucial in determining the ET yield from a QC to a discrete state, whereas the ET time is influenced by competing factors from the coupling strength and the coherence properties of the electronic wavepacket.

Rasmussen, Andrew M., E-mail: andyras@gmail.com; Ramakrishna, S.; Weiss, Emily A.; Seideman, Tamar, E-mail: t-seideman@northwestern.edu [Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3113 (United States)] [Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3113 (United States)

2014-04-14T23:59:59.000Z

408

The effects of wetting layer on electronic and optical properties of intersubband P-to-S transitions in strained dome-shaped InAs/GaAs quantum dots  

SciTech Connect (OSTI)

The authors report on the impact of wetting layer thickness and quantum dot size on the electronic and optical properties of dome-shaped InAs/GaAs quantum dots (QDs) with strained potential. Two wetting layer thicknesses of 0.5 and 2.0 nm were compared. A strong size dependence of P-to-S transition energy, transition dipole moment, oscillator strength, and linear and third-order nonlinear susceptibilities were concluded. The P-to-S transition dipole moment was shown to be purely in-plane polarization. The linear and nonlinear absorption and dispersion showed a red shift when the wetting layer thickness was increased. Our results revealed that the nonlinear susceptibility is much more sensitive to QD size compared to the linear susceptibility. An interpretation of the results was presented based on the probability density of finding the electron inside the dot and wetting layer. The results are in good agreement with previously reported experimental data.

Shahzadeh, Mohammadreza; Sabaeian, Mohammad, E-mail: sabaeian@scu.ac.ir [Physics Department, Faculty of Science, Shahid Chamran University of Ahvaz (Iran, Islamic Republic of)

2014-06-15T23:59:59.000Z

409

Statistics of the Coulomb-blockade peak spacings of a silicon quantum dot Center for NanoScience and Sektion Physik, LMU Munchen, Geschwister-Scholl-Platz 1, D-80539 Munchen, Germany  

E-Print Network [OSTI]

Statistics of the Coulomb-blockade peak spacings of a silicon quantum dot F. Simmel Center for NanoScience-Magder* Center for NanoScience and Sektion Physik, LMU Mu¨nchen, Geschwister-Scholl-Platz 1, D-80539 Mu, Cambridge, Massachusetts 02139 J. P. Kotthaus Center for NanoScience and Sektion Physik, LMU Mu

Ludwig-Maximilians-Universität, München

410

Transport through open quantum dots: Making semiclassics quantitative Iva B#ezinov, 1, e i z, e an o e , 1 i o a e , an oa i B e 1  

E-Print Network [OSTI]

Transport through open quantum dots: Making semiclassics quantitative Iva B#ezinová, 1, e i z, e an o e , 1 i o a e , an oa i B e 1 1 Institute for Theoretical Physics, Vienna University of Technology JARA­FIT and II. Institute of Physics, RWTH Aachen, 52074 Aachen, Germany, EU # e eive o e i e a 1 # e

Rotter, Stefan

411

Suppressed Blinking and Auger Recombination in Near-Infrared Type-II InP/CdS Nanocrystal Quantum Dots  

E-Print Network [OSTI]

Dots Allison M. Dennis, Benjamin D. Mangum, Andrei Piryatinski, Young-Shin Park, Daniel C. Hannah*, Materials Physics & Applications Division: Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States Theoretical Division, Los Alamos National Laboratory

412

A level set simulation for ordering of quantum dots via cleaved-edge X. B. Niu,1,2  

E-Print Network [OSTI]

applications such as next generation optoelectronic devices.1 For optimal performance of arrays of QDs it is ideal if the size distribution of the dots is rather uniform. Moreover, the exact properties of QDs can energy Etrans is sketched in Fig. 2. Within the method, island boundaries are described by a level set

Ratsch, Christian

413

PHYSICAL REVIEW E 85, 031117 (2012) Stochastically driven single-level quantum dot: A nanoscale finite-time thermodynamic  

E-Print Network [OSTI]

as a nanoscale finite-time thermodynamic machine. The dot is driven by an external stochastic force that switches that extracts heat from the cold reservoir via the work input of the stochastic driving. The efficiency coupling conditions, familiar features are recovered in appropriate limits: Carnot efficiency

Lindenberg, Katja

2012-01-01T23:59:59.000Z

414

Hybrid molecular assemblies composed of hydrogenase enzymes and quantum dots helps to pave the way for the  

E-Print Network [OSTI]

% wastepaper, including 10% post consumer waste. Lighting Up Enzymes for Solar Hydrogen Production NREL. Scientists at the National Renewable Energy Laboratory (NREL) have combined quan- tum dots, which selectivity and fast turnover of hydrogenase enzymes to achieve light-driven hydrogen (H2) production

415

Quantum Dots: Theory  

E-Print Network [OSTI]

conventional conjugate gradient method [44] which is oftensolved using the conjugate gradient method. It turns outsuch as the conjugate gradient method. The atomic structure

Vukmirovic, Nenad

2010-01-01T23:59:59.000Z

416

Small-signal modulation and differential gain of red-emitting (??=?630?nm) InGaN/GaN quantum dot lasers  

SciTech Connect (OSTI)

We report small-signal modulation bandwidth and differential gain measurements of a ridge waveguide In{sub 0.4}Ga{sub 0.6}N/GaN quantum dot laser grown by molecular beam epitaxy. The laser peak emission is at ??=?630?nm. The ?3?dB bandwidth of an 800??m long device was measured to be 2.4?GHz at 250?mA under pulsed biasing, demonstrating the possibility of high-speed operation of these devices. The differential gain was measured to be 5.3?×?10{sup ?17}?cm{sup 2}, and a gain compression factor of 2.87?×?10{sup ?17}?cm{sup 3} is also derived from the small-signal modulation response.

Frost, Thomas; Banerjee, Animesh; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)] [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2013-11-18T23:59:59.000Z

417

Effects of capping on GaN quantum dots deposited on Al{sub 0.5}Ga{sub 0.5}N by molecular beam epitaxy  

SciTech Connect (OSTI)

The impact of the capping process on the structural and morphological properties of GaN quantum dots (QDs) grown on fully relaxed Al{sub 0.5}Ga{sub 0.5}N templates was studied by transmission electron microscopy. A morphological transition between the surface QDs, which have a pyramidal shape, and the buried ones, which have a truncated pyramid shape, is evidenced. This shape evolution is accompanied by a volume change: buried QDs are bigger than surface ones. Furthermore a phase separation into Al{sub 0.5}Ga{sub 0.5}N barriers was observed in the close vicinity of buried QDs. As a result, the buried QDs were found to be connected with the nearest neighbors by thin Ga-rich zones, whereas Al-rich zones are situated above the QDs.

Korytov, M. [CRHEA-CNRS, rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France) and University of Nice Sophia-Antipolis, Parc Valrose, 06103 Nice (France); Benaissa, M. [CNRST, angle Allal-Fassi/FAR, Madinat al-irfane, 10000 Rabat (Morocco); Brault, J.; Vennegues, P. [CRHEA-CNRS, rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Huault, T. [CRHEA-CNRS, rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France and RIBER S.A., 31 rue Casimir Perier, BP 70083, 95873 Bezons Cedex (France); Neisius, T. [CP2M, Faculte Saint Jerome, 13397 Marseille Cedex 20 (France)

2009-04-06T23:59:59.000Z

418

Enhanced photoluminescence due to two-photon enhanced three-photon absorption in Mn{sup 2+}-doped ZnS quantum dots  

SciTech Connect (OSTI)

In this work, we have investigated the multi-photon absorption induced photoluminescence in Mn{sup 2+}-doped ZnS quantum dots in the wavelength range 860 – 1050 nm (Near-Infrared Window I). The observed three-photon action cross-section has been compared with the theoretical prediction under four band approximation. An enhancement of four to five orders has been observed in the range from 970 to 1050 nm compared to the theoretical value, which is attributed to two-photon enhanced three-photon absorption. Transient lifetime measurements reveal a lifetime of 0.35 ± 0.3 ms, which is four to five orders higher than other conventional fluorescent probes.

Subha, Radhu [Department of Physics, Indian Institute of Technology, Madras, Chennai, 600036, India and Department of Physics, National University of Singapore (NUS), 2 Science Drive 3, Singapore, 117542 (Singapore); Nalla, Venkatram; Ji, Wei, E-mail: phyjiwei@nus.edu.sg [Department of Physics, National University of Singapore (NUS), 2 Science Drive 3, Singapore, 117542 (Singapore); Feng, Xiaobo [School of Physics and Electronic Information Technology, Yunnan Normal University (China); Vijayan, C. [Department of Physics, Indian Institute of Technology, Madras, Chennai, 600036 (India)

2014-10-15T23:59:59.000Z

419

Electrically Confined Quantum Dot Intersubband Optoelectronic Devices Wei Wu, Dibyendu Dey, Omer G. Memis, Alex Katnelson, and *Hooman Mohseni  

E-Print Network [OSTI]

and optoelectronic devices, lasers and their applications. The Systems area focuses on wireless communication systems 361 Quantum Mechanics For Engineers ELEC 462 Optoelectronic Devices PHYS 302 Intermediate

Mohseni, Hooman

420

Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow-green spectral region  

SciTech Connect (OSTI)

The room temperature laser generation in the yellow-green ({lambda} = 558.5-566.7 nm) spectral range has been demonstrated under optical pumping by a pulsed nitrogen laser of Cd(Zn)Se/ZnSe quantum dot heterostructures. The maximum achieved laser wavelength was as high as {lambda} = 566.7 nm at a laser cavity length of 945 {mu}m. High values of both the output pulsed power (up to 50 W) and the external differential quantum efficiency ({approx}60%) were obtained at a cavity length of 435 {mu}m. Both a high quality of the laser heterostructure and a low lasing threshold ({approx}2 kW cm{sup -2}) make it possible to use a pulsed InGaN laser diode as a pump source. A laser microchip converter based on this heterostructure has demonstrated a maximum output pulse power of {approx}90 mW at {lambda} = 560 nm. The microchip converter was placed in a standard TO-18 (5.6 mm in diameter) laser diode package. (semiconductor lasers. physics and technology)

Lutsenko, E V; Voinilovich, A G; Rzheutskii, N V; Pavlovskii, V N; Yablonskii, G P; Sorokin, S V; Gronin, S V; Sedova, I V; Kop'ev, Petr S; Ivanov, Sergei V; Alanzi, M; Hamidalddin, A; Alyamani, A

2013-05-31T23:59:59.000Z

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421

Low-frequency self-pulsing in single-section quantum-dot laser diodes and its relation to optothermal pulsations  

SciTech Connect (OSTI)

Self-sustained pulsations in the output of an InAs quantum dot laser diode in the MHz range are reported. The characteristics (shape, range, and frequency) are presented for the free-running laser and when optical feedback in the Littrow configuration is applied. Bistability in the light-current characteristics is observed for operating wavelengths smaller than the gain peak, but it is not present for wavelengths above the gain peak and for the free-running laser, except at elevated temperatures. The temporal evolution of the envelopes of the optical spectra is very different for operation below, around, and above the gain peak, which might be related to a change of phase-amplitude coupling across the gain maximum, in agreement with the expectation for a two-level system. The time scale and the bifurcation scenario, supported by an initial blueshift of the emission wavelength of each longitudinal mode in time-resolved optical spectra, suggests that these are optothermal pulsations similar to those reported in quantum well amplifiers [Phys. Rev. E 68, 036209 (2003)]. The mechanism of pulsation seems to be a destabilization of bistable states (due to saturable absorption in the beam wings) by a slow thermal change in the waveguiding properties.

Tierno, A. [Universite de Nice Sophia Antipolis, Institut Non-Lineaire de Nice, UMR 6618, F-06560 Valbonne (France); Radwell, N. [SUPA and the School of Physics and Astronomy University of Glasgow (United Kingdom); Ackemann, T. [SUPA and the Department of Physics, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

2011-10-15T23:59:59.000Z

422

'Giant' multishell CdSe nanocrystal quantum dots with supporessed blinking: novel fluorescent probes for real-time detection of single-molecule events  

SciTech Connect (OSTI)

We reported for the first time that key nanocrystal quantum dot (NQD) optical properties-quantum yield, photobleaching and blinking-can be rendered independent ofNQD surface chemistry and environment by growth of a very thick, defect-free inorganic shell. Here, we show the precise shell-thickness dependence of these effects. We demonstrate that 'giant-shell' NQDs can be largely non-blinking for observation times as long as 54 minutes and lhat on-time fractions are independent of experimental time-resolution from 1-200 ms. These effects are primarily demonstrated on (CdSe)CdS (core)shell NQDs, but we also show that alloyed shells comprising Cd.Znl.'S and terminated with a non-cytotoxic ZnS layer exhibit similar properties. The mechanism for suppressed blinking and dramatically enhanced stability is attributed to both effective isolation of the NQD core excitonic wavefunction from the NQD surface, as well as a quasi-Type II electronic structure. The unusual electronic structure provides for effective spatial separation of the electron and hole into the shell and core, respectively, and, thereby, for reduced efficiencies in non-radiative Auger recombination.

Hollingsworth, Jennifer A [Los Alamos National Laboratory; Vela, Javier [Los Alamos National Laboratory; Htoon, Han [Los Alamos National Laboratory; Klimov, Victor I [Los Alamos National Laboratory; Casson, Amy R [Los Alamos National Laboratory; Chen, Yongfen [NON LANL

2009-01-01T23:59:59.000Z

423

Proposal for high-speed and high-fidelity electron-spin initialization in a negatively charged quantum dot coupled to a microcavity in a weak external magnetic field  

SciTech Connect (OSTI)

We describe a proposal for fast electron-spin initialization in a negatively charged quantum dot coupled to a microcavity without the need for a strong magnetic field. We employ two-photon excitation to access trion states that are spin forbidden by one-photon excitation. Our simulation shows a maximum initialization speed of 1.3 GHz and maximum fidelity of 99.7% with realistic system parameters.

Majumdar, Arka; Lin Ziliang; Faraon, Andrei; Vuckovic, Jelena [E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305 (United States)

2010-08-15T23:59:59.000Z

424

Enhancement of current collection in epitaxial lift-off InAs/GaAs quantum dot thin film solar cell and concentrated photovoltaic study  

SciTech Connect (OSTI)

We report the fabrication of a thin film InAs/GaAs quantum dot solar cell (QD cell) by applying epitaxial lift-off (ELO) approach to the GaAs substrate. We confirmed significant current collection enhancement (?0.91?mA/cm{sup 2}) in the ELO-InAs QD cell within the wavelength range of 700?nm–900?nm when compared to the ELO-GaAs control cell. This is almost six times of the sub-GaAs bandgap current collection (?0.16?mA/cm{sup 2}) from the wavelength range of 900?nm and beyond, we also confirmed the ELO induced resonance cavity effect was able to increase the solar cell efficiency by increasing both the short circuit current and open voltage. The electric field intensity of the resonance cavity formed in the ELO film between the Au back reflector and the GaAs front contact layer was analyzed in detail by finite-differential time-domain (FDTD) simulation. We found that the calculated current collection enhancement within the wavelength range of 700?nm–900?nm was strongly influenced by the size and shape of InAs QD. In addition, we performed concentrated light photovoltaic study and analyzed the effect of intermediate states on the open voltage under varied concentrated light intensity for the ELO-InAs QD cell.

Sogabe, Tomah, E-mail: sogabe@mbe.rcast.u-tokyo.ac.jp; Shoji, Yasushi; Tamayo, Efrain; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8504 (Japan); Mulder, Peter; Schermer, John [Institute for Molecules and Materials, Radboud University Nijmegen, Heyendaalseweg 135, 6525 AJ Nijmegen (Netherlands)

2014-09-15T23:59:59.000Z

425

Understanding the electronic structure of CdSe quantum dot-fullerene (C{sub 60}) hybrid nanostructure for photovoltaic applications  

SciTech Connect (OSTI)

By using the density-functional tight binding method, we studied the electronic structure of CdSe quantum dot(QD)-buckminsterfullerene (C{sub 60}) hybrid systems as a function of both the size of the QD and concentration of the fullerene molecule. Our calculation reveals that the lowest unoccupied molecular orbital energy level of the hybrid CdSeQD-C{sub 60} systems lies on the fullerene moiety, whereas the highest occupied molecular orbital (HOMO) energy level lies either on the QD or the fullerene depending on size of the CdSe QD. We explored the possibility of engineering the energy level alignment by varying the size of the CdSe QD. With increase in size of the QD, the HOMO level is shifted upward and crosses the HOMO level of the C{sub 60}-thiol molecule resulting transition from the type-I to type-II band energy alignment. The density of states and charge density plot support these types of band gap engineering of the CdSe-C{sub 60} hybrid systems. This type II band alignment indicates the possibility of application of this nanohybrid for photovoltaic purpose.

Sarkar, Sunandan; Rajbanshi, Biplab; Sarkar, Pranab, E-mail: pranab.sarkar@visva-bharati.ac.in [Department of Chemistry, Visva-Bharati University, Santiniketan 731235 (India)

2014-09-21T23:59:59.000Z

426

Influence of As{sub 4} flux on the growth kinetics, structure, and optical properties of InAs/GaAs quantum dots  

SciTech Connect (OSTI)

We report the effects of variations in As{sub 4} growth flux on the evolution of molecular beam epitaxy grown InAs quantum dots (QDs) and their structures and optical properties. For InAs QDs grown under As-stable conditions, evaluated through photoluminescence and atomic force microscopy (AFM) measurements, it is evident that QD size increases with As{sub 4} pressure along with improvement in size uniformity. Furthermore, transmission electron microscopy measurements for InAs layers of critical thicknesses ({approx}1.7 ML) showed decreasing QD density with increasing As{sub 4} pressure accompanied by a strong reduction in photoluminescence (PL) integral intensity. These show that high As{sub 4} fluxes suppress InAs QD formation while the decreasing PL intensity seems to indicate cluster formation that features nonradiative recombination. AFM measurements show larger and denser QDs for samples grown at higher As{sub 4} pressures. These are explained on the basis of adatom condensation during surface cooling and the influence of As{sub 4} pressure on indium incorporation.

Garcia, A.; Mateo, C. M.; Defensor, M.; Salvador, A.; Hui, H. K.; Boothroyd, C. B.; Philpott, E. [Condensed Matter Physics Laboratory, National Institute of Physics, University of the Philippines, Diliman, 1101 Quezon City (Philippines); Institute of Materials Research and Engineering, 3 Research Link (Singapore)

2007-10-01T23:59:59.000Z

427

The effects of fabrication temperature on current-voltage characteristics and energy efficiencies of quantum dot sensitized ZnOH-GO hybrid solar cells  

SciTech Connect (OSTI)

The effects of fabrication temperature are investigated on the performance of CdSe quantum dot (QD)-sensitized hybrid solar cells of the composite material of zinc (hydr)oxide (ZnOH-GO)with 2?wt.?% graphite oxide. The current-voltage (I-V) and photo-current measurements show that higher fabrication temperatures yield greater photovoltaic power conversion efficiencies that essentially indicate more efficient solar cells. Two Photon Fluorescence images show the effects of temperature on the internal morphologies of the solar devices based on such materials. The CdSe-QD sensitized ZnOH-GO hybrid solar cells fabricated at 450?°C showing conversion of ?10.60% under a tungsten lamp (12.1 mW/cm{sup 2}) are reported here, while using potassium iodide as an electrolyte. The output photocurrent, I (?A) with input power, P (mW/cm{sup 2}) is found to be superlinear, showing a relation of I?=?P{sup n}, where n?=?1.4.

Islam, S. M. Z. [IUSL, Department of Physics, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States); Department of Physics and Engineering Physics, Fordham University, 441 E. Fordham Road, Bronx, New York 10458 (United States); Department of Electrical Engineering, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States); Gayen, Taposh [IUSL, Department of Physics, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States); Department of Physics and Engineering Physics, Fordham University, 441 E. Fordham Road, Bronx, New York 10458 (United States); Tint, Naing; Alfano, Robert, E-mail: ralfano@sci.ccny.cuny.edu [IUSL, Department of Physics, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States); Department of Electrical Engineering, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States); Shi, Lingyan [IUSL, Department of Physics, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States); Department of Biomedical Engineering, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States); Seredych, Mykola; Bandosz, Teresa J. [Department of Chemistry, The City College of New York, 160 Convent Ave., New York, New York 10031 (United States)

2014-11-07T23:59:59.000Z

428

Phonon mediated spin relaxation in a moving quantum dot: Doppler shift, Cherenkov radiation, and spin relaxation boom  

E-Print Network [OSTI]

We study relaxation of a moving spin qubit caused by phonon noise. As we vary the speed of the qubit, we observe several interesting features in spin relaxation and the associated phonon emission, induced by Doppler effect. In particular, in the supersonic regime, the phonons emitted by the relaxing qubit is concentrated along certain directions, similar to the shock waves produced in classical Cherenkov effect. As the speed of the moving qubit increases from the subsonic regime to the supersonic regime, the qubit experiences a peak in the spin relaxation rate near the speed of sound, which we term a spin relaxation boom in analogy to the classical sonic boom. We also find that the moving spin qubit may have a lower relaxation rate than a static qubit, which hints at the possibility of coherence-preserving transportation for a spin qubit. While the physics we have studied here has strong classical analogies, we do find that quantum confinement for the spin qubit plays an important role in all the phenomena we observe. Specifically, it produces a correction on the Cherenkov angle, and removes the divergence in relaxation rate at the sonic barrier. It is our hope that our results would encourage further research into approaches for transferring and preserving quantum information in spin qubit architectures.

Xinyu Zhao; Peihao Huang; Xuedong Hu

2015-02-27T23:59:59.000Z

429

Enhancement of the photovoltaic performance in P3HT: PbS hybrid solar cells using small size PbS quantum dots  

SciTech Connect (OSTI)

Different approaches of surface modification of the quantum dots (QDs), namely, solution-phase (octylamine, octanethiol) and post-deposition (acetic acid, 1,4-benzenedithiol) ligand exchange were used in the fabrication of hybrid bulk heterojunction solar cell containing poly (3-hexylthiophene) (P3HT) and small (2.4?nm) PbS QDs. We show that replacing oleic acid by shorter chain ligands improves the figures of merit of the solar cells. This can possibly be attributed to a combination of a reduced thickness of the barrier for electron transfer and an optimized phase separation. The best results were obtained for post-deposition ligand exchange by 1,4-benzenedithiol, which improves the power conversion efficiency of solar cells based on a bulk heterojunction of lead sulfide (PbS) QDs and P3HT up to two orders of magnitude over previously reported hybrid cells based on a bulk heterojunction of P3HT:PbS QDs, where the QDs are capped by acetic acid ligands. The optimal performance was obtained for solar cells with 69?wt.?% PbS QDs. Besides the ligand effects, the improvement was attributed to the formation of an energetically favorable bulk heterojunction with P3HT, when small size (2.4?nm) PbS QDs were used. Dark current density-voltage (J-V) measurements carried out on the device provided insight into the working mechanism: the comparison between the dark J-V characteristics of the bench mark system P3HT:PCBM and the P3HT:PbS blends allows us to conclude that a larger leakage current and a more efficient recombination are the major factors responsible for the larger losses in the hybrid system.

Firdaus, Yuliar; Van der Auweraer, Mark, E-mail: mark.vanderauweraer@chem.kuleuven.be [Laboratory of Photochemistry and Spectroscopy, Division of Molecular Imaging and Photonics, Chemistry Department, KULeuven, Celestijnenlaan 200F, 2404, B-3001 Leuven (Belgium); Vandenplas, Erwin; Gehlhaar, Robert; Cheyns, David [Imec vzw, Kapeldreef 75, B-3001 Leuven (Belgium); Justo, Yolanda; Hens, Zeger [Physical Chemistry Laboratory, Ghent University, Krijgslaan 281-S3, 9000 Gent (Belgium)

2014-09-07T23:59:59.000Z

430

Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots  

SciTech Connect (OSTI)

Changing the growth rate during the heteroepitaxial capping of InAs/GaAs quantum dots (QDs) with a 5?nm-thick GaAsSbN capping layer (CL) strongly modifies the QD structural and optical properties. A size and shape transition from taller pyramids to flatter lens-shaped QDs is observed when the CL growth rate is decreased from 1.5 to 0.5 ML/s. This indicates that the QD dissolution processes taking place during capping can be controlled to some extent by the GaAsSbN CL growth rate, with high growth rates allowing a complete preservation of the QDs. However, the dissolution processes are shown to have a leveling effect on the QD height, giving rise to a narrower size distribution for lower growth rates. Contrary to what could be expected, these effects are opposite to the strong blue-shift and improvement of the photoluminescence (PL) observed for higher growth rates. Nevertheless, the PL results can be understood in terms of the strong impact of the growth rate on the Sb and N incorporation into the CL, which results in lower Sb and N contents at higher growth rates. Besides the QD-CL band offsets and QD strain, the different CL composition alters the band alignment of the system, which can be transformed to type-II at low growth rates. These results show the key role of the alloyed CL growth parameters on the resulting QD properties and demonstrate an intricate correlation between the PL spectra and the sample morphology in complex QD-CL structures.

Ulloa, J. M., E-mail: jmulloa@isom.upm.es; Utrilla, A. D.; Guzman, A.; Hierro, A. [Institute for Systems based on Optoelectronics and Microtechnology (ISOM) and Dpto. Ingeniería Electrónica, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Reyes, D. F.; Ben, T.; González, D. [Departamento de Ciencia de los Materiales e IM y QI, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain)

2014-10-07T23:59:59.000Z

431

Accuracy of Circular Polarization as a Measure of Spin Polarization in Quantum Dot Qubits C. E. Pryor* and M. E. Flatte  

E-Print Network [OSTI]

dot spin light emitting diode provides a test of carrier spin injection into a qubit and a means. Towards this end, recent experiments [5] have dem- onstrated a spin light emitting diode (spin

Flatte, Michael E.

432

THE JOURNAL OF CHEMICAL PHYSICS 139, 244307 (2013) Electron tunneling characteristics of a cubic quantum dot, (PbS)32  

E-Print Network [OSTI]

distribution at the Fermi level seem to determine the tunneling characteristics of the system. © 2013 AIP been of a special interest due to their potential applications in IR photo-detection, photovoltaics-gap controlled PbS nanocrystals of various sizes were synthesized to study the effect of band- gap energy

Pandey, Ravi

433

Novel photonic bandgap based architectures for quantum computers and networks  

E-Print Network [OSTI]

microcontrollers (MC), microelectromechanical systems (MEMS)block. A microelectromechanical systems (MEMS) actuator,such as microelectromechanical systems (MEMS), quantum dots,

Güney, Durdu

2007-01-01T23:59:59.000Z

434

Determinant representations for form factors in quantum integrable models with GL(3)-invariant R-matrix  

E-Print Network [OSTI]

We obtain determinant representations for the form factors of the monodromy matrix entries in quantum integrable models solvable by the nested algebraic Bethe ansatz and possessing $GL(3)$-invariant $R$-matrix. These representations can be used for the calculation of correlation functions in the models of physical interest.

S. Pakuliak; E. Ragoucy; N. A. Slavnov

2014-06-19T23:59:59.000Z

435

Strategies to Boost Efficiencies of Quantum Pralay K. Santra  

E-Print Network [OSTI]

for achieving low cost, high efficiency conversion of solar energy to electricity. quantum dot solar cells Efficiencies of Quantum Dot Solar Cells Pralay K. Santra of Chemical Engineering, Stanford University The most is that of the quantum dot which has the potential for achieving low cost, high efficiency conversion of solar energy

Shyamasundar, R.K.

436

Wave equations for determining energy-level gaps of quantum systems  

E-Print Network [OSTI]

An differential equation for wave functions is proposed, which is equivalent to Schr\\"{o}dinger's wave equation and can be used to determine energy-level gaps of quantum systems. Contrary to Schr\\"{o}dinger's wave equation, this equation is on `bipartite' wave functions. It is shown that those `bipartite' wave functions satisfy all the basic properties of Schr\\"{o}dinger's wave functions. Further, it is argued that `bipartite' wave functions can present a mathematical expression of wave-particle duality. This provides an alternative approach to the mathematical formalism of quantum mechanics.

Zeqian Chen

2006-09-10T23:59:59.000Z

437

Ground State Quantum Computation  

E-Print Network [OSTI]

We formulate a novel ground state quantum computation approach that requires no unitary evolution of qubits in time: the qubits are fixed in stationary states of the Hamiltonian. This formulation supplies a completely time-independent approach to realizing quantum computers. We give a concrete suggestion for a ground state quantum computer involving linked quantum dots.

Ari Mizel; M. W. Mitchell; Marvin L. Cohen

1999-08-11T23:59:59.000Z

438

Sandia National Laboratories: quantum dots  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1developmentturbine bladelifetimepower-to-gasproduce andPublicationsequivalencedots

439

Quantum top inside a Bose-Einstein-condensate Josephson junction  

SciTech Connect (OSTI)

We consider an atomic quantum dot confined between two weakly coupled Bose-Einstein condensates, where the dot serves as an additional tunneling channel. It is shown that the thus-embedded atomic quantum dot is a pseudospin subject to an external torque, and therefore equivalent to a quantum top. We demonstrate by numerical analysis of the time-dependent coupled evolution equations that this microscopic quantum top is very sensitive to any deviation from linear oscillatory behavior of the condensates. For sufficiently strong dot-condensate coupling, the atomic quantum dot can induce or modify the tunneling between the macroscopic condensates in the two wells.

Bausmerth, Ingrid; Posazhennikova, Anna [Institut fuer Theoretische Festkoerperphysik, Universitaet Karlsruhe, D-76128 Karlsruhe (Germany); Fischer, Uwe R. [Institut fuer Theoretische Physik, Eberhard-Karls-Universitaet Tuebingen, Auf der Morgenstelle 14, D-72076 Tuebingen (Germany)

2007-05-15T23:59:59.000Z

440

One step, microwave assisted green synthesis of biocompatible carbon quantum dots and their composites with [??PW{sub 12}O{sub 40}{sup 3?}] for visible light photocatalysis  

SciTech Connect (OSTI)

We report a simple, rapid and green route for synthesis of fluorescent carbon quantum dots (CQDs) by microwave assisted pyrolysis method using polyleucine polymer (Boc-L-Leu-HEMA) as precursor and self-passivating agent. The as synthesized CQDs were found to possess low cytotoxicity, thus making them suitable candidates for bioimaging and bio-labelling. Moreover, nanocomposites of as prepared CQDs with [??PW{sub 12}O{sub 40}{sup 3?}] polyoxometalate were synthesized and were shown to possess excellent photocatalytic properties under visible light towards degradation of organic dye pollutants. Based on the control experiments, a suitable mechanism has been proposed to explain the remarkable photoactivity of the CQD/[??PW{sub 12}O{sub 40}{sup 3?}] composites.

Sahasrabudhe, Atharva, E-mail: atharva19101991@gmail.com; Pant, Shashank, E-mail: atharva19101991@gmail.com; Chatti, Manjunath, E-mail: atharva19101991@gmail.com; Maiti, Binoy, E-mail: atharva19101991@gmail.com; De, Priyadarsi, E-mail: atharva19101991@gmail.com; Roy, Soumyajit, E-mail: atharva19101991@gmail.com [Department of Chemical Sciences, Indian Institute of Science Education and Research-Kolkata, Mohanpur-741252, W.B. (India)

2014-04-24T23:59:59.000Z

Note: This page contains sample records for the topic "determination quantum dot" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot  

SciTech Connect (OSTI)

In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

Emre Kavruk, Ahmet, E-mail: aekavruk@selcuk.edu.tr, E-mail: aekavruk@gmail.com; Koc, Fatih [Physics Department, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Sahin, Mehmet, E-mail: mehmet.sahin@agu.edu.tr, E-mail: mehsahin@gmail.com [Physics Department, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Department of Material Sciences and Nanotechnology Engineering, Abdullah Gul University, Kayseri (Turkey)

2013-11-14T23:59:59.000Z

442

Lateral Quantum Dots for Quantum Information Processing  

E-Print Network [OSTI]

a superconducting Josephson junction device to a microwavequbits constructed from Josephson junction devices, coupled

House, Matthew Gregory

2012-01-01T23:59:59.000Z

443

Lateral Quantum Dots for Quantum Information Processing  

E-Print Network [OSTI]

of gate voltage V P , which shows a broad oscillation whicha function of a gate voltage. These oscillations represent aof gate voltage V P , which shows a broad oscillation which

House, Matthew Gregory

2012-01-01T23:59:59.000Z

444

Lateral Quantum Dots for Quantum Information Processing  

E-Print Network [OSTI]

V T by ?tting. The equivalent resistance R r and capacitanceare the RLC model equivalent resistance R r and capacitanceV T by ?tting. The equivalent resistance R r and capacitance

House, Matthew Gregory

2012-01-01T23:59:59.000Z

445

Dot Density Maps Dot density maps, or dot maps, portray the geographic distribution of discrete phenomena  

E-Print Network [OSTI]

Dot Density Maps Dot density maps, or dot maps, portray the geographic distribution of discrete for representing geographic patterns. Dot density maps are particularly useful for understanding global distribution of the mapped phenomenon and comparing relative densities of different regions on the map. Dot

Klippel, Alexander

446

Work demonstrates that smaller can be better: quantum confinement can lead to increased PV efficiency and could  

E-Print Network [OSTI]

the first all-quantum-dot photovoltaic cell, which was based on lead sulfide and demonstrated reasonable% post consumer waste. NREL Certifies First All-Quantum-Dot Photovoltaic Cell; Demonstrates Stability efficiency and could lead to a doubling of third-generation solar cell efficiencies. Tiny quantum dots

447

Finite Quantum Grand Canonical Ensemble and Temperature from Single Electron Statistics in a Mesoscopic Device  

E-Print Network [OSTI]

I present a theoretical model of a quantum statistical ensemble for which, unlike in conventional physics, the total number of particles is extremely small. The thermodynamical quantities are calculated by taking a small $N$ by virtue of the orthodicity of canonical ensemble. The finite quantum grand partition function of a Fermi-Dirac system is calculated. The model is applied to a quantum dot coupled with a small two dimensional electron system. Such system consists of an alternatively single and double occupied electron system confined in a quantum dot, which exhanges one electron with a small $N$ two dimensional electron reservoir. The analytic determination of the temperature of a $(1\\leftrightarrow 2)$ electron system and the role of ergodicity are discussed. The generalized temperature expression in the small $N$ regime recovers the usual temperature expression by taking the limit of $N\\to\\infty$ of the electron bath.

Enrico Prati

2010-01-14T23:59:59.000Z

448

Proposal of high efficiency solar cells with closely stacked InAs/In{sub 0.48}Ga{sub 0.52}P quantum dot superlattices: Analysis of polarized absorption characteristics via intermediate–band  

SciTech Connect (OSTI)

We present a theoretical study of the electronic structures and polarized absorption properties of quantum dot superlattices (QDSLs) using wide–gap matrix material, InAs/In{sub 0.48}Ga{sub 0.52}P QDSLs, for realizing intermediate–band solar cells (IBSCs) with two–step photon–absorption. The plane–wave expanded Burt–Foreman operator ordered 8–band k·p theory is used for this calculation, where strain effect and piezoelectric effect are taken into account. We find that the absorption spectra of the second transitions of two–step photon–absorption can be shifted to higher energy region by using In{sub 0.48}Ga{sub 0.52}P, which is lattice–matched material to GaAs substrate, as a matrix material instead of GaAs. We also find that the transverse magnetic polarized absorption spectra in InAs/In{sub 0.48}Ga{sub 0.52}P QDSL with a separate IB from the rest of the conduction minibands can be shifted to higher energy region by decreasing the QD height. As a result, the second transitions of two–step photon–absorption by the sunlight occur efficiently. These results indicate that InAs/In{sub 0.48}Ga{sub 0.52}P QDSLs are suitable material combination of IBSCs toward the realization of ultrahigh efficiency solar cells.

Yoshikawa, H., E-mail: yoshikawa-hirofumi@sharp.co.jp; Kotani, T.; Kuzumoto, Y.; Izumi, M.; Tomomura, Y.; Hamaguchi, C. [Advanced Technology Research Laboratories, Sharp Corporation Tenri, Nara 632-8567 (Japan)

2014-07-07T23:59:59.000Z

449

Journal of Crystal Growth 310 (2008) 23202325 Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown  

E-Print Network [OSTI]

materials, and intrinsic quantum mechanical energy loss of the wavelength conversion process via Stokes, Muhammad Jamil, Nelson Tansu Department of Electrical and Computer Engineering, Center for Optical. These results demonstrates that high In-content InGaN QDs can be grown by MOVPE, and can potentially be utilized

Gilchrist, James F.

2008-01-01T23:59:59.000Z

450

Defects and Faults in Quantum Cellular Automata at Nano Scale  

E-Print Network [OSTI]

Defects and Faults in Quantum Cellular Automata at Nano Scale Mehdi Baradaran Tahoori, Mariam considerable research on quantum dot cellular automata (QCA) as a new computing scheme in the nano, quantum dot cellular automata (QCA) not only gives a solution at nano scale, but also it offers a new

451

White light generation by resonant nonradiative energy transfer from epitaxial InGaN/GaN quantum wells to colloidal CdSe/ZnS core/shell quantum dots  

E-Print Network [OSTI]

White light generation by resonant nonradiative energy transfer from epitaxial InGaN/GaN quantum n a l f o r p h y s i c s New Journal of Physics White light generation by resonant nonradiative white-light-generating nonradiative energy transfer (ET) from epitaxial quantum wells (QWs) to colloidal

Demir, Hilmi Volkan

452

Fluorescent of C-dot composite thin films and its properties  

SciTech Connect (OSTI)

In the present work, we report the preparation of a fluorescent carbon nanodots (C-dots) epoxy composite thin films on a glass substrate. C-dots were prepared directly by a simple hydrothermal method using citric acid as a carbon source. The C-dots solutions were mixed with a transparent epoxy resin to form C-dot epoxy composite. Furthermore, the composite precursor was deposited on the glass substrate using a spin coating method in order to fabricate C-dot epoxy composite thin film. The transmittance intensity of C-dot composite film reached up to 90% in the visible light spectra. Using Swanopoel method, the film thickness of fabricated C-dot composite film was determined at about 1.45 ?m, a value lies in a typical range needed for a wide range application. Thus, the C-dot composite film is promising in broadening applications in various fields such as energy conversion, optoelectronics, and display technology.

Mahen, Ea Cahya Septia, E-mail: ferry@fi.itb.ac.id; Nuryadin, Bebeh W., E-mail: ferry@fi.itb.ac.id; Iskandar, Ferry, E-mail: ferry@fi.itb.ac.id; Abdullah, Mikrajuddin, E-mail: ferry@fi.itb.ac.id; Khairurrijal, E-mail: ferry@fi.itb.ac.id [Department of Physics, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl. Ganesha 10 Bandung, 40132 (Indonesia)

2014-02-24T23:59:59.000Z

453

Determination of the 85 Rb ng-series quantum defect by electric-field-induced resonant energy  

E-Print Network [OSTI]

Determination of the 85 Rb ng-series quantum defect by electric-field-induced resonant energy of an electric field 1 . The resonant energy transfer process between Rydberg atoms is driven by the electric-series of potassium. The range of electric fields or "width" over which signifi- cant resonant energy transfer can

Le Roy, Robert J.

454

Quantum Zeno effect and the impossibility of determining the quantum state of a single system Orly Alter and Yoshihisa Yamamoto  

E-Print Network [OSTI]

to monitor this time evolution using the measurement results. This effect is shown to be equivalent the statistics of the results of a series of measurements performed on a single system, with no time evolution of measurements are independent of the measurement results. Therefore it was also suggested that the quantum Zeno

Utah, University of

455

Semi-classical measures on Quantum graphs and the Gau map of the determinant manifold  

E-Print Network [OSTI]

believed that QE does not hold in general for a FIXED quantum graph. In [BKW04], it is proved that QE does

Boyer, Edmond

456

Layered architecture for quantum computing  

E-Print Network [OSTI]

We develop a layered quantum computer architecture, which is a systematic framework for tackling the individual challenges of developing a quantum computer while constructing a cohesive device design. We discuss many of the prominent techniques for implementing circuit-model quantum computing and introduce several new methods, with an emphasis on employing surface code quantum error correction. In doing so, we propose a new quantum computer architecture based on optical control of quantum dots. The timescales of physical hardware operations and logical, error-corrected quantum gates differ by several orders of magnitude. By dividing functionality into layers, we can design and analyze subsystems independently, demonstrating the value of our layered architectural approach. Using this concrete hardware platform, we provide resource analysis for executing fault-tolerant quantum algorithms for integer factoring and quantum simulation, finding that the quantum dot architecture we study could solve such problems on the timescale of days.

N. Cody Jones; Rodney Van Meter; Austin G. Fowler; Peter L. McMahon; Jungsang Kim; Thaddeus D. Ladd; Yoshihisa Yamamoto

2012-09-27T23:59:59.000Z

457

CX-005646: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Quantum Dot Light Emitting Diode ModuleCX(s) Applied: A9, B3.6Date: 04/25/2011Location(s): Pittsburgh, PennsylvaniaOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

458

Semi-classical measures on Quantum graphs and the Gau map of the determinant manifold  

E-Print Network [OSTI]

believed that QE does not hold in general for a FIXED quantum graph. This is proved for star graphs in [BKW to what people do in several papers like [BG00, BKW04, BW08, Ba12, BB13]. Let

Recanati, Catherine

459

Bright three-band white light generated from CdSe/ZnSe quantum dot-assisted Sr{sub 3}SiO{sub 5}:Ce{sup 3+},Li{sup +}-based white light-emitting diode with high color rendering index  

SciTech Connect (OSTI)

In this study, bright three-band white light was generated from the CdSe/ZnSe quantum dot (QD)-assisted Sr{sub 3}SiO{sub 5}:Ce{sup 3+},Li{sup +}-based white light-emitting diode (WLED). The CdSe/ZnSe core/shell structure was confirmed by energy dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy. The CdSe/ZnSe QDs showed high quantum efficiency (79%) and contributed to the high luminous efficiency ({eta}{sub L}) of the fabricated WLED. The WLED showed bright natural white with excellent color rendering property ({eta}{sub L}=26.8 lm/W, color temperature=6140 K, and color rendering index=85) and high stability against the increase in forward bias currents from 20 to 70 mA.

Jang, Ho Seong; Kwon, Byoung-Hwa; Jeon, Duk Young [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Yang, Heesun [Department of Materials Science and Engineering, Hongik University, 72-1, Sangsu-dong, Mapo-gu, Seoul 121-791 (Korea, Republic of)

2009-10-19T23:59:59.000Z

460

Towards bulk based preconditioning for quantum dotcomputations  

SciTech Connect (OSTI)

This article describes how to accelerate the convergence of Preconditioned Conjugate Gradient (PCG) type eigensolvers for the computation of several states around the band gap of colloidal quantum dots. Our new approach uses the Hamiltonian from the bulk materials constituent for the quantum dot to design an efficient preconditioner for the folded spectrum PCG method. The technique described shows promising results when applied to CdSe quantum dot model problems. We show a decrease in the number of iteration steps by at least a factor of 4 compared to the previously used diagonal preconditioner.

Dongarra, Jack; Langou, Julien; Tomov, Stanimire; Channing,Andrew; Marques, Osni; Vomel, Christof; Wang, Lin-Wang

2006-05-25T23:59:59.000Z

Note: This page contains sample records for the topic "determination quantum dot" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Quantum Machines  

E-Print Network [OSTI]

We discuss quantum information processing machines. We start with single purpose machines that either redistribute quantum information or identify quantum states. We then move on to machines that can perform a number of functions, with the function they perform being determined by a program, which is itself a quantum state. Examples of both deterministic and probabilistic programmable machines are given, and we conclude with a discussion of the utility of quantum programs.

Mark Hillery; Vladimir Buzek

2009-03-24T23:59:59.000Z

462

E-Print Network 3.0 - asymmetric inas quantum Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

at Stony Brook, Department of Electrical Engineering and Computer Engineering, Optoelectronics Research Group Collection: Engineering 6 InAs quantum dot infrared photodetectors...

463