Sample records for deposition growth cxs

  1. Carbon nanotube forests growth using catalysts from atomic layer deposition

    SciTech Connect (OSTI)

    Chen, Bingan; Zhang, Can; Esconjauregui, Santiago; Xie, Rongsi; Zhong, Guofang; Robertson, John [Department of Engineering, University of Cambridge, Cambridge CB3 0FA (United Kingdom); Bhardwaj, Sunil [Istituto Officina dei Materiali-CNR Laboratorio TASC, s.s. 14, km 163.4, I-34012 Trieste (Italy); Sincrotone Trieste S.C.p.A., s.s. 14, km 163.4, I-34149 Trieste (Italy); Cepek, Cinzia [Istituto Officina dei Materiali-CNR Laboratorio TASC, s.s. 14, km 163.4, I-34012 Trieste (Italy)

    2014-04-14T23:59:59.000Z

    We have grown carbon nanotubes using Fe and Ni catalyst films deposited by atomic layer deposition. Both metals lead to catalytically active nanoparticles for growing vertically aligned nanotube forests or carbon fibres, depending on the growth conditions and whether the substrate is alumina or silica. The resulting nanotubes have narrow diameter and wall number distributions that are as narrow as those grown from sputtered catalysts. The state of the catalyst is studied by in-situ and ex-situ X-ray photoemission spectroscopy. We demonstrate multi-directional nanotube growth on a porous alumina foam coated with Fe prepared by atomic layer deposition. This deposition technique can be useful for nanotube applications in microelectronics, filter technology, and energy storage.

  2. QUANTIFYING GROWTH AND CALCIUM CARBONATE DEPOSITION OF CALLIARTHRON CHEILOSPORIOIDES (CORALLINALES, RHODOPHYTA)

    E-Print Network [OSTI]

    Martone, Patrick T.

    NOTE QUANTIFYING GROWTH AND CALCIUM CARBONATE DEPOSITION OF CALLIARTHRON CHEILOSPORIOIDES Station of Stanford University, Pacific Grove, California 93950, USA Growth and calcium carbonate measurement of growth and calcium carbonate deposition at each meristem. In Calliarthron, meristematic

  3. Climate Dependency of Tree Growth Suppressed by Acid Deposition

    E-Print Network [OSTI]

    Lapenas, Andrei G.

    uptake). These soil changes coincided with decreased diameter growth and a suppression of climateClimate Dependency of Tree Growth Suppressed by Acid Deposition Effects on Soils in Northwest Russia G R E G O R Y B . L A W R E N C E , * , A N D R E I G . L A P E N I S , D A N B E R G G R E N

  4. DIAMOND CHEMICAL VAPOR DEPOSITION Nucleation and Early Growth Stages

    E-Print Network [OSTI]

    Dandy, David

    a reality. Epi- taxial diamond has been grown on diamond and cubic-BN. Polycrystalline diamond films haveDIAMOND CHEMICAL VAPOR DEPOSITION Nucleation and Early Growth Stages by Huimin Liu David S. Dandy of high-quality diamond coatings on preshaped parts and synthesis of free-standing shapes of diamond

  5. Growth mode evolution of hafnium oxide by atomic layer deposition

    SciTech Connect (OSTI)

    Nie, Xianglong; Ma, Fei; Ma, Dayan, E-mail: madayan@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, Shaanxi (China); Xu, Kewei [State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, People's Republic of China and Department of Physics and Opt-electronic Engineering, Xi'an University of Arts and Science, Xi'an 710065, Shaanxi (China)

    2014-01-15T23:59:59.000Z

    HfO{sub 2} thin films were deposited using tetrakis-ethylmethylamido hafnium and H{sub 2}O as precursors on silicon by atomic layer deposition (ALD). The morphology and microstructures at different ALD cycles were characterized by atomic force microscopy and high-resolution transmission electron microscopy. Based on the height–height correlation function and power spectral density function, quantitative analysis of surface morphologies was performed. Three characteristic dimensions (?{sub 1}, ?{sub 2}, and ?{sub 3}) corresponding to three surface structures, islands, local and global fluctuations, were identified. The evolution of ALD growth mode at range of the three critical scales was investigated, respectively. It suggests the transformation of growth mode from quasi two-dimensional layer-by-layer to three-dimensional island for global fluctuations.

  6. Atomic layer deposition of TiN films Growth and electrical behavior down to

    E-Print Network [OSTI]

    Atomic layer deposition of TiN films Growth and electrical behavior down to sub-nanometer scale Hao Van Bui #12;ATOMIC LAYER DEPOSITION OF TiN FILMS GROWTH AND ELECTRICAL BEHAVIOR DOWN TO SUBD. Thesis - University of Twente, Enschede, the Netherlands Title: Atomic layer deposition of TiN films

  7. Growth of graphene underlayers by chemical vapor deposition

    SciTech Connect (OSTI)

    Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Manyala, Ncholu, E-mail: ncholu.manyala@up.ac.za [Department of Physics, Institute of Applied Materials, SARChI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa)] [Department of Physics, Institute of Applied Materials, SARChI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Charlie Johnson, A. T. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)] [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

    2013-11-15T23:59:59.000Z

    We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

  8. Growth of novel micro-structured carbon thin films by using ultrashort-pulse laser deposition

    E-Print Network [OSTI]

    ;! ! )! 1.1 pulsed-laser deposition PLD PLD ultra-short pulse laser deposition uPLD PLD [1] figure 1 seed electron PLD PLD nano-second ns Lab 325 femto-second fs ultra-short pulse laser deposition uPLD) u! ! "! Growth of novel micro-structured carbon thin films by using ultrashort-pulse laser

  9. Real-time growth rate metrology for a tungsten chemical vapor deposition process by acoustic sensing

    E-Print Network [OSTI]

    Rubloff, Gary W.

    to a production-scale tungsten chemical vapor deposition cluster tool for in situ process sensing. Process gasesReal-time growth rate metrology for a tungsten chemical vapor deposition process by acoustic to achieve run-to-run process control of the deposited tungsten film thickness. © 2001 American Vacuum

  10. Influence of anticlinal growth on upper Miocene turbidite deposits, Elk Hills field, Kern County, California

    SciTech Connect (OSTI)

    Reid, S.A. (Bechtel Petroleum Operations, Inc., Tupman, CA (United States)); McJannet, G.S. (Dept. of Energy, Tupman, CA (United States))

    1991-02-01T23:59:59.000Z

    Growth of subsea anticlines during deposition of the upper Miocene 24Z and 26R sandstones at Elk Hills caused the development of several sinuous, lenticular sand bodies. later structural growth enhanced the trap characteristics of these sandstones. Both sandstones are in the uppermost portion of the Elk Hills Shale Member of the Monterey Formation and contain channel-fill and overbank deposits of sand-rich turbidite systems. At the onset of turbidite deposition, low relief subsea anticlines separated broad basins which progressively deepened to the northeast. Channel-fill deposits of coarse-grained sand generally followed the axes of these northwest-southeast-trending basins. At several sites, channel-fill deposits also spilled north across anticlinal axes into the next lower basins. Wide bands of overbank sand and mud were deposited at sand body edges on the flat basin floors. Midway through turbidite deposition, a period of anticlinal growth substantially raised subsea relief. Channel-fill deposits continued in narrower basins but passed north into deeper basin only around well-defined sites at the anticlines' downplunge termini. Narrow basin shapes and higher anticline relief prevented significant overbank deposition. With Pliocene to Holocene uplift of the late Miocene structural trends, stratigraphic mounding of the north-directed channel-fill deposits helped create structural domes at 24Z, 2B and Northwest Stevens pools. In sand bodies lacking significant overbank deposits prevented oil entrapment in sand bodies deposited at times of low anticlinal relief.

  11. Self-Limiting Chemical Vapor Deposition Growth of Monolayer Graphene from Ethanol

    E-Print Network [OSTI]

    Maruyama, Shigeo

    1 Self-Limiting Chemical Vapor Deposition Growth of Monolayer Graphene from Ethanol Pei Zhao, and systematically investigate the growth of graphene from ethanol and compare its self-limiting behavior over copper facets with different identities. Results show that the growth of graphene from ethanol in the LPCVD

  12. Bilayer graphene growth by low pressure chemical vapor deposition on copper foil

    E-Print Network [OSTI]

    Fang, Wenjing, S.M. Massachusetts Institute of Technology

    2012-01-01T23:59:59.000Z

    Successfully integrating graphene in standard processes for applications in electronics relies on the synthesis of high-quality films. In this work we study Low Pressure Chemical Vapor Deposition (LPCVD) growth of bilayer ...

  13. Ion Beam Deposition of Thin Films: Growth Processes and Nanostructure Formation

    SciTech Connect (OSTI)

    Hofsaess, Hans C. [II. Physikalisches Institut, Universitaet Goettingen, Friedrich-Hund-Platz 1, D-37077 Goettingen (Germany)

    2004-12-01T23:59:59.000Z

    Ion beam deposition is a process far from thermodynamic equilibrium and is in particular suited to grow metastable thin films with diamond-like properties, such as tetrahedral amorphous carbon (ta-C) and cubic boron nitride (c-BN). In this contribution the atomistic description of the deposition and growth processes are reviewed and compared to experimental results, obtained from mass selected ion beam deposition. The focus will be set to the nucleation and growth processes of boron nitride as a model system for ion based thin film formation. Furthermore, recent examples for nanostructure formation in ion deposited compound thin films will be presented. Ion beam deposited metal-carbon nano-composite thin films exhibit a variety of different morphologies such as rather homogeneous nanocluster distributions embedded in an a-C matrix, but also the self-organized formation of nanoscale multilayer structures.

  14. Correlation analysis of tree growth, climate, and acid deposition in the Lake States. Forest Service research paper

    SciTech Connect (OSTI)

    Holdaway, M.R.

    1990-01-01T23:59:59.000Z

    The report describes research designed to detect subtle regional tree growth trends related to sulfate (SO{sub 4}) deposition in the Lake States. Correlation methods were used to analyze climatic and SO{sub 4} deposition. Effects of SO{sub 4} deposition are greater on climatically stressed trees, especially pine species on dry sites, than on unstressed trees. Jack pine growth shows the strongest correlation to both climate and acid deposition.

  15. Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Demaurex, Bénédicte; Bartlome, Richard; Seif, Johannes P.; Geissbühler, Jonas; Alexander, Duncan T.; Jeangros, Quentin; Ballif, Christophe; De Wolf, Stefaan

    2014-08-07T23:59:59.000Z

    Low-temperature (?200?°C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-enhanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only frommore »the growth conditions but also from unintentional contamination of the reactor. Based on our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.« less

  16. Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Demaurex, Bénédicte; Bartlome, Richard; Seif, Johannes P.; Geissbühler, Jonas; Alexander, Duncan T.; Jeangros, Quentin; Ballif, Christophe; De Wolf, Stefaan

    2014-08-07T23:59:59.000Z

    Low-temperature (?200?°C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-enhanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only from the growth conditions but also from unintentional contamination of the reactor. Based on our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.

  17. Sculptured thin films and glancing angle deposition: Growth mechanics and applications

    E-Print Network [OSTI]

    Robbie, Kevin

    Sculptured thin films and glancing angle deposition: Growth mechanics and applications K. Robbiea thin films with three dimensional microstructure controlled on the 10 nm scale were fabricated'' columnar thin film microstructure into desired forms ranging from zigzag shaped to helical to four

  18. Continuous growth of single-wall carbon nanotubes using chemical vapor deposition

    DOE Patents [OSTI]

    Grigorian, Leonid (Raymond, OH); Hornyak, Louis (Evergreen, CO); Dillon, Anne C (Boulder, CO); Heben, Michael J (Denver, CO)

    2008-10-07T23:59:59.000Z

    The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

  19. Continuous growth of single-wall carbon nanotubes using chemical vapor deposition

    DOE Patents [OSTI]

    Grigorian, Leonid; Hornyak, Louis; Dillon, Anne C; Heben, Michael J

    2014-09-23T23:59:59.000Z

    The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

  20. Cooperative Island Growth of Large Area Single-Crystal Graphene by Chemical Vapor Deposition on Cu

    SciTech Connect (OSTI)

    Regmi, Murari [Oak Ridge National Laboratory (ORNL); Rouleau, Christopher [Oak Ridge National Laboratory (ORNL); Puretzky, Alexander A [ORNL; Ivanov, Ilia N [ORNL; Geohegan, David B [ORNL; Chen, Jihua [ORNL; Eastman, Jeffrey [Argonne National Laboratory (ANL); Eres, Gyula [ORNL

    2014-01-01T23:59:59.000Z

    We describe a two-step approach for suppressing nucleation of graphene on Cu using chemical vapor deposition. In the first step, as received Cu foils are oxidized in air at temperatures up to 500 C to remove surface impurities and to induce the regrowth of Cu grains during subsequent annealing in H2 flow at 1040 C prior to graphene growth. In the second step, transient reactant cooling is performed by using a brief Ar pulse at the onset of growth to induce collisional deactivation of the carbon growth species. The combination of these two steps results in a three orders of magnitude reduction in the graphene nucleation density, enabling the growth of millimeter-size single crystal graphene grains. A kinetic model shows that suppressing nucleation promotes a cooperative island growth mode that favors the formation of large area single crystal graphene, and it is accompanied by a roughly 3 orders of magnitude increase in the reactive sticking probability of methane compared to that in random nucleation growth.

  1. Diamond growth on WC-Co substrates by hot filament chemical vapor deposition: Effect of filamentsubstrate separation

    E-Print Network [OSTI]

    Bristol, University of

    Polycrystalline diamond films have been grown by hot filament (HF) chemical vapor deposition on WC-Co bar is an established technique for growing hard, wear- resistant polycrystalline diamond films on a range of substratesDiamond growth on WC-Co substrates by hot filament chemical vapor deposition: Effect of filament

  2. Growth of FePt encapsulated carbon nanotubes by thermal chemical vapor deposition

    SciTech Connect (OSTI)

    Fujiwara, Yuji, E-mail: fujiwara@phen.mie-u.ac.jp; Kaneko, Tetsuya; Hori, Kenta; Takase, Sho; Sato, Hideki; Maeda, Kohji; Kobayashi, Tadashi [Graduate School of Engineering, Mie University, Kurima-machiya-cho 1577, Tsu 514-8507 (Japan); Kato, Takeshi; Iwata, Satoshi [Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan); Jimbo, Mutsuko [Department of Electrical and Electronic Engineering, Daido University, Takiharu-cho 10-3, Minami-ku, Nagoya 457-8530 (Japan)

    2014-03-15T23:59:59.000Z

    FePt encapsulated carbon nanotubes (CNTs) were grown by thermal chemical vapor deposition using an Fe/Pt bilayer catalyst. The CNTs were grown according to the base growth model. Selected area electron diffraction results revealed that the encapsulated particles were A1-FePt, L1{sub 0}-FePt, and Fe{sub 3}PtC. The crystal structures of particles found at the root parts of CNTs were not able to be identified, however. The layered structure of catalytic films seemed to be responsible for the difference in Pt content between particles found at tip and root parts of CNTs. Approximately 60% of CNTs grown at 800?°C had particles at their tip parts, compared to only 30% when the growth temperature was 700?°C, indicating that higher process temperatures promote particle encapsulation in CNTs.

  3. Effect of buffer layer growth temperature on epitaxial GaN films deposited by magnetron sputtering

    SciTech Connect (OSTI)

    Mohanta, P.; Singh, D.; Kumar, R.; Ganguli, T.; Srinivasa, R. S.; Major, S. S. [Center For Research in Nano-Technology and Science (India); Semiconductor Laser Section, RRCAT, Indore-452013 (India); Department of Metallurgical Engineering and Materials Science (India); Department of Physics, Indian Institute of Technology Bombay, Mumbai - 400076 (India)

    2012-06-05T23:59:59.000Z

    Epitaxial GaN films were deposited by reactive sputtering of a GaAs target in 100 % nitrogen at 700 deg. C on ZnO buffer layers grown at different substrate temperatures over sapphire substrates. High resolution X-ray diffraction measurements and the corresponding analysis show that the growth temperature of buffer layers significantly affects the micro-structural parameters of GaN epilayer, such as lateral coherence length, tilt and twist, while the vertical coherence length remains unaffected. The optimum substrate temperature for buffer layer growth has been found to be 300 deg. C. High epitaxial quality GaN film grown on such a buffer layer exhibited micro strain of 1.8x10{sup -4} along with screw and edge type dislocation densities of 7.87x10{sup 9} and 1.16x10{sup 11}, respectively.

  4. Controlling single and few-layer graphene crystals growth in a solid carbon source based chemical vapor deposition

    SciTech Connect (OSTI)

    Papon, Remi; Sharma, Subash; Shinde, Sachin M.; Vishwakarma, Riteshkumar; Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Center for Fostering Young and Innovative Researchers, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, 466-8555 (Japan)

    2014-09-29T23:59:59.000Z

    Here, we reveal the growth process of single and few-layer graphene crystals in the solid carbon source based chemical vapor deposition (CVD) technique. Nucleation and growth of graphene crystals on a polycrystalline Cu foil are significantly affected by the injection of carbon atoms with pyrolysis rate of the carbon source. We observe micron length ribbons like growth front as well as saturated growth edges of graphene crystals depending on growth conditions. Controlling the pyrolysis rate of carbon source, monolayer and few-layer crystals and corresponding continuous films are obtained. In a controlled process, we observed growth of large monolayer graphene crystals, which interconnect and merge together to form a continuous film. On the other hand, adlayer growth is observed with an increased pyrolysis rate, resulting few-layer graphene crystal structure and merged continuous film. The understanding of monolayer and few-layer crystals growth in the developed CVD process can be significant to grow graphene with controlled layer numbers.

  5. Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films

    SciTech Connect (OSTI)

    Van Bui, Hao, E-mail: H.VanBui@utwente.nl; Wiggers, Frank B.; Gupta, Anubha; Nguyen, Minh D.; Aarnink, Antonius A. I.; Jong, Michel P. de; Kovalgin, Alexey Y., E-mail: A.Y.Kovalgin@utwente.nl [MESA Institute for Nanotechnology, University of Twente, P. O. Box 217, 7500 AE Enschede (Netherlands)

    2015-01-01T23:59:59.000Z

    The authors have studied and compared the initial growth and properties of AlN films deposited on Si(111) by thermal and plasma-enhanced atomic layer deposition (ALD) using trimethylaluminum and either ammonia or a N{sub 2}-H{sub 2} mixture as precursors. In-situ spectroscopic ellipsometry was employed to monitor the growth and measure the refractive index of the films during the deposition. The authors found that an incubation stage only occurred for thermal ALD. The linear growth for plasma-enhanced ALD (PEALD) started instantly from the beginning due to the higher nuclei density provided by the presence of plasma. The authors observed the evolution of the refractive index of AlN during the growth, which showed a rapid increase up to a thickness of about 30?nm followed by a saturation. Below this thickness, higher refractive index values were obtained for AlN films grown by PEALD, whereas above that the refractive index was slightly higher for thermal ALD films. X-ray diffraction characterization showed a wurtzite crystalline structure with a (101{sup ¯}0) preferential orientation obtained for all the layers with a slightly better crystallinity for films grown by PEALD.

  6. Growth optimization and structural analysis for ferromagnetic Mn-doped ZnO layers deposited by radio frequency magnetron sputtering

    SciTech Connect (OSTI)

    Abouzaid, M.; Ruterana, P.; Liu, C.; Morkoc, H. [SIFCOM UMR 6176 CNRS-ENSICAEN, 6 Boulevard du Marechal Juin, 14050 Caen Cedex (France); Department of Electrical Engineering, Virginia Commonwealth University, Richmond Virginia 23284 (United States)

    2006-06-01T23:59:59.000Z

    The effect of the deposition temperature on the crystalline quality of (Zn,Mn)O is investigated in thin films prepared by radio frequency magnetron sputtering on c-plane sapphire and GaN substrates. The layers are made of a 0.5 {mu}m Mn-doped layer towards the surface on top of a 150 nm pure ZnO buffer. Depending on the deposition temperature, the layers can exhibit a columnar structure; the adjacent domains are rotated from one another by 90 deg. , putting [1010] and [1120] directions face to face. At high Mn concentration the columnar structure is blurred by the formation of Mn rich precipitates. Only one variety of domains is observed at an optimal deposition temperature of 500 deg. C: they are slightly rotated around the [0001] axis (mosaic growth) and bounded by threading dislocations.

  7. Growth direction of oblique angle electron beam deposited silicon monoxide thin films identified by optical second-harmonic generation

    SciTech Connect (OSTI)

    Vejling Andersen, Søren; Lund Trolle, Mads; Pedersen, Kjeld [Department of Physics and Nanotechnology, Aalborg University, Skjernvej 4A, DK-9220 Aalborg Øst (Denmark)] [Department of Physics and Nanotechnology, Aalborg University, Skjernvej 4A, DK-9220 Aalborg Øst (Denmark)

    2013-12-02T23:59:59.000Z

    Oblique angle deposited (OAD) silicon monoxide (SiO) thin films forming tilted columnar structures have been characterized by second-harmonic generation. It was found that OAD SiO leads to a rotationally anisotropic second-harmonic response, depending on the optical angle of incidence. A model for the observed dependence of the second-harmonic signal on optical angle of incidence allows extraction of the growth direction of OAD films. The optically determined growth directions show convincing agreement with cross-sectional scanning electron microscopy images. In addition to a powerful characterization tool, these results demonstrate the possibilities for designing nonlinear optical devices through SiO OAD.

  8. "Fractal Growth Modeling of Electrochemical Deposition in Solid Freeform Fabrication," J. G. Zhou, Z. He and J. Guo, Proceedings of the Tenth Solid Freeform Fabrication Symposium, Austin, Texas, August, 1999.

    E-Print Network [OSTI]

    Zhou, Jack

    "Fractal Growth Modeling of Electrochemical Deposition in Solid Freeform Fabrication," J. G. Zhou, August, 1999. FRACTAL GROWTH MODELING OF ELECTROCHEMICAL DEPOSITION IN SOLID FREEFORM FABRICATION Jack G deposition among metal particles during ECLD-SFF is a fractal growth process. The fractal dimension

  9. Microwave plasma enhanced chemical vapor deposition of nanocrystalline diamond films by bias-enhanced nucleation and bias-enhanced growth

    SciTech Connect (OSTI)

    Chu, Yueh-Chieh [Institute of Microelectronics, National Cheng Kung University No.1, University Road, Tainan 701, Taiwan (China); Tzeng, Yonhua, E-mail: tzengyo@mail.ncku.edu.tw [Institute of Microelectronics, National Cheng Kung University No.1, University Road, Tainan 701, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University No.1, University Road, Tainan 701, Taiwan (China); Auciello, Orlando [Department of Materials Science and Engineering and Bioengineering, University of Texas in Dallas, 800 W. Campbell Rd, Richardson, Texas 75080 (United States)

    2014-01-14T23:59:59.000Z

    Effects of biasing voltage-current relationship on microwave plasma enhanced chemical vapor deposition of ultrananocrystalline diamond (UNCD) films on (100) silicon in hydrogen diluted methane by bias-enhanced nucleation and bias-enhanced growth processes are reported. Three biasing methods are applied to study their effects on nucleation, growth, and microstructures of deposited UNCD films. Method A employs 320?mA constant biasing current and a negative biasing voltage decreasing from ?490?V to ?375?V for silicon substrates pre-heated to 800?°C. Method B employs 400?mA constant biasing current and a decreasing negative biasing voltage from ?375?V to ?390?V for silicon pre-heated to 900?°C. Method C employs ?350?V constant biasing voltage and an increasing biasing current up to 400?mA for silicon pre-heated to 800?°C. UNCD nanopillars, merged clusters, and dense films with smooth surface morphology are deposited by the biasing methods A, B, and C, respectively. Effects of ion energy and flux controlled by the biasing voltage and current, respectively, on nucleation, growth, microstructures, surface morphologies, and UNCD contents are confirmed by scanning electron microscopy, high-resolution transmission-electron-microscopy, and UV Raman scattering.

  10. Thermodynamic analysis and growth of ZrO2 by chloride chemical vapor deposition

    E-Print Network [OSTI]

    Anderson, Timothy J.

    reaction [9­12], and simple chamber designs (e.g., vertical, cold-wall, axisymmetric chamber) to deposit flow injector can be used. A stagnation plane flow injector (for vertical, cold-wall CVD chambers homogeneous nucleation and/ or reactor wall deposition. For example, Holstein [17] de- monstrated that at high

  11. Low temperature junction growth using hot-wire chemical vapor deposition

    DOE Patents [OSTI]

    Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

    2014-02-04T23:59:59.000Z

    A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

  12. Reactive Ballistic Deposition of Porous TiO2 Films: Growth and...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    high-surface area films of TiO2 are synthesized by reactive ballistic deposition of titanium metal in an oxygen ambient. Auger electron spectroscopy (AES) is used to investigate...

  13. Towards engineered branch placement: Unreal™ match between vapour-liquid-solid glancing angle deposition nanowire growth and simulation

    SciTech Connect (OSTI)

    Taschuk, M. T.; Tucker, R. T.; LaForge, J. M.; Beaudry, A. L. [Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta T6H 2V4 (Canada); Kupsta, M. R. [NRC National Institute for Nanotechnology, Edmonton, Alberta T6G 2M9 (Canada); Brett, M. J. [Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta T6H 2V4 (Canada); NRC National Institute for Nanotechnology, Edmonton, Alberta T6G 2M9 (Canada)

    2013-12-28T23:59:59.000Z

    The vapour-liquid-solid glancing angle deposition (VLS-GLAD) process is capable of producing complex nanotree structures with control over azimuthal branch orientation and height. We have developed a thin film growth simulation including ballistic deposition, simplified surface diffusion, and droplet-mediated cubic crystal growth for the VLS-GLAD process using the Unreal{sup TM} Development Kit. The use of a commercial game engine has provided an interactive environment while allowing a custom physics implementation. Our simulation's output is verified against experimental data, including a volumetric film reconstruction produced using focused ion beam and scanning-electron microscopy (SEM), crystallographic texture, and morphological characteristics such as branch orientation. We achieve excellent morphological and texture agreement with experimental data, as well as qualitative agreement with SEM imagery. The simplified physics in our model reproduces the experimental films, indicating that the dominant role flux geometry plays in the VLS-GLAD competitive growth process responsible for azimuthally oriented branches and biaxial crystal texture evolution. The simulation's successful reproduction of experimental data indicates that it should have predictive power in designing novel VLS-GLAD structures.

  14. Nucleation and growth of MgO atomic layer deposition: A real-time spectroscopic ellipsometry study

    SciTech Connect (OSTI)

    Wang, Han; Fu, Kan [Department of Materials Science and Engineering, University of Connecticut, Storrs, Connecticut 06269. (United States)] [Department of Materials Science and Engineering, University of Connecticut, Storrs, Connecticut 06269. (United States)

    2013-11-15T23:59:59.000Z

    The atomic layer deposition (ALD) of MgO thin films from bis(cyclopentadienyl) magnesium and H{sub 2}O was studied using in-situ real-time spectroscopic ellipsometry (SE), ex-situ x-ray photoelectron spectroscopy, and grazing-incidence x-ray diffraction. It is found that the initial growth is not linear during the first ten cycles, and magnesium silicate forms spontaneously on the SiO{sub 2}/Si substrates at 250 °C. Submonolayer sensitivity of SE is demonstrated by the analysis of each half-cycle and self-limiting adsorption, revealing characteristic features of hetero- and homo-MgO ALD processes.

  15. Non-equilibrium deposition of phase pure Cu{sub 2}O thin films at reduced growth temperature

    SciTech Connect (OSTI)

    Subramaniyan, Archana, E-mail: asubrama@mymail.mines.edu [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401 (United States); Perkins, John D.; Lany, Stephan; Stevanovic, Vladan; Ginley, David S.; Zakutayev, Andriy [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); O’Hayre, Ryan P. [Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401 (United States)

    2014-02-01T23:59:59.000Z

    Cuprous oxide (Cu{sub 2}O) is actively studied as a prototypical material for energy conversion and electronic applications. Here we reduce the growth temperature of phase pure Cu{sub 2}O thin films to 300?°C by intentionally controlling solely the kinetic parameter (total chamber pressure, P{sub tot}) at fixed thermodynamic condition (0.25 mTorr pO{sub 2}). A strong non-monotonic effect of P{sub tot} on Cu-O phase formation is found using high-throughput combinatorial-pulsed laser deposition. This discovery creates new opportunities for the growth of Cu{sub 2}O devices with low thermal budget and illustrates the importance of kinetic effects for the synthesis of metastable materials with useful properties.

  16. Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition

    DOE Patents [OSTI]

    Han, Jung (Woodbridge, CT); Su, Jie (New Haven, CT)

    2008-08-05T23:59:59.000Z

    Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.

  17. Nucleation and growth of carbon nanotubes by microwave plasma chemical vapor deposition

    E-Print Network [OSTI]

    at a very rapid and constant rate 100 nm/s that decreases sharply after the catalyst Co particles become. Experi- ments performed, mostly on individual nanotubes, show that they have extraordinary electrical conditions such as substrate, catalyst, feed gas, and temperature, the growth model proposed by several

  18. Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from SiH4 and N2O

    E-Print Network [OSTI]

    Rubloff, Gary W.

    Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from for Advanced Electronic Materials Processing, North Carolina State University, Raleigh, North Carolina 27695-7920 Received 7 January 1999; accepted 21 May 1999 Active sampling mass spectrometry has been used for process

  19. Critical factor for epitaxial growth of cobalt-doped BaFe{sub 2}As{sub 2} films by pulsed laser deposition

    SciTech Connect (OSTI)

    Hiramatsu, Hidenori, E-mail: h-hirama@lucid.msl.titech.ac.jp; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-1, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox S2-16, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Sato, Hikaru [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-1, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Katase, Takayoshi [Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Hosono, Hideo [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-1, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox S2-16, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan)

    2014-04-28T23:59:59.000Z

    We heteroepitaxially grew cobalt-doped BaFe{sub 2}As{sub 2} films on (La,Sr)(Al,Ta)O{sub 3} single-crystal substrates by pulsed laser deposition using four different wavelengths and investigated how the excitation wavelength and pulse energy affected growth. Using the tilting and twisting angles of X-ray diffraction rocking curves, we quantitatively analyzed the crystallinity of each film. We found that the optimal deposition rate, which could be tuned by pulse energy, was independent of laser wavelength. The high-quality film grown at the optimal pulse energy (i.e., the optimum deposition rate) exhibited high critical current density over 1 MA/cm{sup 2} irrespective of the laser wavelength.

  20. Direct Visualization of Initial SEI Morphology and Growth Kinetics During Lithium Deposition by in situ Electrochemical Transmission Electron Microscopy

    SciTech Connect (OSTI)

    Sacci, Robert L.; Dudney, Nancy J.; More, Karren L.; Parent, Lucas R.; Arslan, Ilke; Browning, Nigel D.; Unocic, Raymond R.

    2013-12-20T23:59:59.000Z

    Deposition of Li is a major safety concern existing in Li-ion secondary batteries. Here we perform the first in situ high spatial resolution measurement coupled with real-time quantitative electrochemistry to characterize SEI formation on gold using a standard battery electrolyte. We demonstrate that a dendritic SEI forms prior to Li deposition and that it remains on the surface after Li electrodissolution.

  1. Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

    SciTech Connect (OSTI)

    Michon, A.; Vezian, S.; Roudon, E.; Lefebvre, D.; Portail, M. [CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne (France)] [CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne (France); Zielinski, M.; Chassagne, T. [NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)] [NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)

    2013-05-28T23:59:59.000Z

    Graphene growth from a propane flow in a hydrogen environment (propane-hydrogen chemical vapor deposition (CVD)) on SiC differentiates from other growth methods in that it offers the possibility to obtain various graphene structures on the Si-face depending on growth conditions. The different structures include the (6{radical}3 Multiplication-Sign 6{radical}3)-R30 Degree-Sign reconstruction of the graphene/SiC interface, which is commonly observed on the Si-face, but also the rotational disorder which is generally observed on the C-face. In this work, growth mechanisms leading to the formation of the different structures are studied and discussed. For that purpose, we have grown graphene on SiC(0001) (Si-face) using propane-hydrogen CVD at various pressure and temperature and studied these samples extensively by means of low energy electron diffraction and atomic force microscopy. Pressure and temperature conditions leading to the formation of the different structures are identified and plotted in a pressure-temperature diagram. This diagram, together with other characterizations (X-ray photoemission and scanning tunneling microscopy), is the basis of further discussions on the carbon supply mechanisms and on the kinetics effects. The entire work underlines the important role of hydrogen during growth and its effects on the final graphene structure.

  2. Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

    SciTech Connect (OSTI)

    Michon, A.; Vezian, S.; Portail, M. [CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne (France); Ouerghi, A. [CNRS-LPN, Route de Nozay, 91460 Marcoussis (France); Zielinski, M.; Chassagne, T. [NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)

    2010-10-25T23:59:59.000Z

    We propose to grow graphene on SiC by a direct carbon feeding through propane flow in a chemical vapor deposition reactor. X-ray photoemission and low energy electron diffraction show that propane allows to grow few-layer graphene (FLG) on 6H-SiC(0001). Surprisingly, FLG grown on (0001) face presents a rotational disorder similar to that observed for FLG obtained by annealing on (000-1) face. Thanks to a reduced growth temperature with respect to the classical SiC annealing method, we have also grown FLG/3C-SiC/Si(111) in a single growth sequence. This opens the way for large-scale production of graphene-based devices on silicon substrate.

  3. Epitaxial growth of BaTiO3 thin films at 600 C by metalorganic chemical vapor deposition

    E-Print Network [OSTI]

    Wang, Zhong L.

    with an a-axis perpendicular to the substrate plane. Nanoscale energy dispersive x-ray spectrometry processes include deposition over large areas, high throughput, and uniform coverage of nonplanar shapes by a plasma-enhanced MOCVD pro- cess. It is not known if the added energy from the plasma generates structural

  4. ENHANCED GROWTH RATE AND SILANE UTILIZATION IN AMORPHOUS SILICON AND NANOCRYSTALLINE-SILICON SOLAR CELL DEPOSITION VIA GAS PHASE ADDITIVES

    SciTech Connect (OSTI)

    Ridgeway, R.G.; Hegedus, S.S.; Podraza, N.J.

    2012-08-31T23:59:59.000Z

    Air Products set out to investigate the impact of additives on the deposition rate of both ���µCSi and ���±Si-H films. One criterion for additives was that they could be used in conventional PECVD processing, which would require sufficient vapor pressure to deliver material to the process chamber at the required flow rates. The flow rate required would depend on the size of the substrate onto which silicon films were being deposited, potentially ranging from 200 mm diameter wafers to the 5.7 m2 glass substrates used in GEN 8.5 flat-panel display tools. In choosing higher-order silanes, both disilane and trisilane had sufficient vapor pressure to withdraw gas at the required flow rates of up to 120 sccm. This report presents results obtained from testing at Air Products�¢���� electronic technology laboratories, located in Allentown, PA, which focused on developing processes on a commercial IC reactor using silane and mixtures of silane plus additives. These processes were deployed to compare deposition rates and film properties with and without additives, with a goal of maximizing the deposition rate while maintaining or improving film properties.

  5. Growth of crystalline X-Sic on Si at reduced temperatures by chemical vapor deposition from `silacycllobutane

    E-Print Network [OSTI]

    Steckl, Andrew J.

    gas and the de- simple hydrocarbon, such as propane. The Si-bearing gas is creased operational hazards growth has been reported to pro- duce both monocrystalline layers' at 750 "C and amor- phous layers9 over

  6. Direct Visualization of Dendrite Nucleation and Growth Kinetics during Lithium Deposition with in situ Electrochemical Transmission Electron Microscopy

    SciTech Connect (OSTI)

    Sacci, Robert L [ORNL; Dudney, Nancy J [ORNL; More, Karren Leslie [ORNL; Browning, Nigel [Pacific Northwest National Laboratory (PNNL); Unocic, Raymond R [ORNL

    2014-01-01T23:59:59.000Z

    Formation of Li dendrites is a major safety concern existing in Li-ion secondary batteries. A quantitative electrochemistry method to investigate the dendrite nucleation and growth mechanisms at high spatial is presented. Cyclic voltammetry, in combination with in situ electrochemical transmission electron microscopy (in situ ec-TEM), was used to quantitatively characterize dendrite nucleation and growth mechanisms from a Au working electrode and within a 1.2M LiPF6 EC:DMC electrolyte.

  7. Hydrogen effect on near-atmospheric nitrogen plasma assisted chemical vapor deposition of GaN film growth

    SciTech Connect (OSTI)

    Nagata, T.; Haemori, M.; Sakuma, Y.; Chikyow, T. [Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Anzai, J.; Uehara, T. [Sekisui Chemical Co., Ltd., Wadai, Tsukuba, Ibaraki 300-4292 (Japan)

    2009-03-15T23:59:59.000Z

    The effect of hydrogen on near-atmospheric nitrogen plasma and low temperature growth of GaN thin film was investigated. To investigate nitrogen plasma diluted with hydrogen, optical emission spectroscopy (OES) was employed. OES indicates that hydrogen enhances the generation of the nitrogen first positive system and first negative systems by providing an additional kinetic pathway. The plasma also decomposed triethylgallium and generated Ga ions even at room temperature. Using this plasma, GaN film grew on sapphire substrate epitaxially at growth temperatures of above 170 deg. C and crystallized at 55 deg. C.

  8. Growth mechanisms of carbon nanotrees with branched carbon nanofibers synthesized by plasma-enhanced chemical vapour deposition

    E-Print Network [OSTI]

    Boyer, Edmond

    be interesting for future applications in nanoelectronic devices and also composite materials. hal-008807221 Growth mechanisms of carbon nanotrees with branched carbon nanofibers synthesized by plasma , Didier Pribat*, 3 1 State Key Laboratory for Advanced Metals and Materials, University of Science

  9. Thermal decomposition of ethanol and growth of vertically aligned single-walled carbon nanotubes by alcohol catalytic chemical vapor deposition

    E-Print Network [OSTI]

    Maruyama, Shigeo

    Thermal decomposition of ethanol and growth of vertically aligned single-walled carbon nanotubes. In this study, we have investigated the thermal decomposition of ethanol at various temperatures, as well National Meeting, San Francisco, CA, September 10-14, 2006 1/1 PRES 29 - Thermal decomposition of ethanol

  10. The Growth of InGaAsN for High Efficiency Solar Cells by Metalorganic Chemical Vapor Deposition

    SciTech Connect (OSTI)

    ALLERMAN,ANDREW A.; BANKS,JAMES C.; GEE,JAMES M.; JONES,ERIC D.; KURTZ,STEVEN R.

    1999-09-16T23:59:59.000Z

    InGaAsN alloys are a promising material for increasing the efficiency of multi-junction solar cells now used for satellite power systems. However, the growth of these dilute N containing alloys has been challenging with further improvements in material quality needed before the solar cell higher efficiencies are realized. Nitrogen/V ratios exceeding 0.981 resulted in lower N incorporation and poor surface morphologies. The growth rate was found to depend on not only the total group III transport for a fixed N/V ratio but also on the N/V ratio. Carbon tetrachloride and dimethylzinc were effective for p-type doping. Disilane was not an effective n-type dopant while SiCl4 did result in n-type material but only a narrow range of electron concentrations (2-5e17cm{sup -3}) were achieved.

  11. Instrument Series: Deposition and Microfabrication Sputter Deposition

    E-Print Network [OSTI]

    heating for attaining precise and repeatable growth conditions Substrate rotation ­ provides variable-speed offers operational flexibility, efficiency, and control, allowing a range of applications and materials and solid oxide fuel cells and solar cells for energy generation Microfabrication ­ deposition

  12. Effects of laser energy fluence on the onset and growth of the Rayleigh-Taylor instabilities and its influence on the topography of the Fe thin film grown in pulsed laser deposition facility

    SciTech Connect (OSTI)

    Mahmood, S. [National Institute of Education, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore); Department of Physics, University of Karachi, Karachi 75270 (Pakistan); Rawat, R. S.; Wang, Y.; Lee, S.; Tan, T. L.; Springham, S. V.; Lee, P. [National Institute of Education, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore); Zakaullah, M. [Department of Physics, Quaid-i-Azam University, 45320 Islamabad (Pakistan)

    2012-10-15T23:59:59.000Z

    The effect of laser energy fluence on the onset and growth of Rayleigh-Taylor (RT) instabilities in laser induced Fe plasma is investigated using time-resolved fast gated imaging. The snow plow and shock wave models are fitted to the experimental results and used to estimate the ablation parameters and the density of gas atoms that interact with the ablated species. It is observed that RT instability develops during the interface deceleration stage and grows for a considerable time for higher laser energy fluence. The effects of RT instabilities formation on the surface topography of the Fe thin films grown in pulsed laser deposition system are investigated (i) using different laser energy fluences for the same wavelength of laser radiation and (ii) using different laser wavelengths keeping the energy fluence fixed. It is concluded that the deposition achieved under turbulent condition leads to less smooth deposition surfaces with bigger sized particle agglomerates or network.

  13. InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition.

    SciTech Connect (OSTI)

    Crawford, Mary Hagerott; Olson, S. M. (Aonex Technologies Inc., Pasadena, CA); Banas, M.; Park, Y. -B. (Aonex Technologies Inc., Pasadena, CA); Ladous, C. (Aonex Technologies Inc., Pasadena, CA); Russell, Michael J.; Thaler, Gerald; Zahler, J. M. (Aonex Technologies Inc., Pasadena, CA); Pinnington, T. (Aonex Technologies Inc., Pasadena, CA); Koleske, Daniel David; Atwater, Harry A. (Aonex Technologies Inc., Pasadena, CA)

    2008-06-01T23:59:59.000Z

    We report growth of InGaN/GaN multi-quantum well (MQW) and LED structures on a novel composite substrate designed to eliminate the coefficient of thermal expansion (CTE) mismatch problems which impact GaN growth on bulk sapphire. To form the composite substrate, a thin sapphire layer is wafer-bonded to a polycrystalline aluminum nitride (P-AlN) support substrate. The sapphire layer provides the epitaxial template for the growth; however, the thermo-mechanical properties of the composite substrate are determined by the P-AlN. Using these substrates, thermal stresses associated with temperature changes during growth should be reduced an order of magnitude compared to films grown on bulk sapphire, based on published CTE data. In order to test the suitability of the substrates for GaN LED growth, test structures were grown by metalorganic chemical vapor deposition (MOCVD) using standard process conditions for GaN growth on sapphire. Bulk sapphire substrates were included as control samples in all growth runs. In situ reflectance monitoring was used to compare the growth dynamics for the different substrates. The material quality of the films as judged by X-ray diffraction (XRD), photoluminescence and transmission electron microscopy (TEM) was similar for the composite substrate and the sapphire control samples. Electroluminescence was obtained from the LED structure grown on a P-AlN composite substrate, with a similar peak wavelength and peak width to the control samples. XRD and Raman spectroscopy results confirm that the residual strain in GaN films grown on the composite substrates is dramatically reduced compared to growth on bulk sapphire substrates.

  14. Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

    SciTech Connect (OSTI)

    Chen, Z. B.; Chen, B.; Wang, Y. B.; Liao, X. Z., E-mail: xiaozhou.liao@sydney.edu.au [School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006 (Australia); Lei, W. [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Perth, WA 6009 (Australia); Tan, H. H.; Jagadish, C. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Zou, J. [Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane, QLD 4072 (Australia); Ringer, S. P. [School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, NSW 2006 (Australia); Australian Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, NSW 2006 (Australia)

    2014-01-13T23:59:59.000Z

    Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots (QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the droplet crystallization through the introduction of group V elements. Here, we report that, in the droplet epitaxy of InAs/GaAs(001) QDs using metal-organic chemical vapor deposition, significant elemental diffusion from the substrate to In droplets occurs, resulting in the formation of In(Ga)As crystals, before As flux is provided. The supply of As flux suppresses the further elemental diffusion from the substrate and promotes surface migration, leading to large island formation with a low island density.

  15. Growth of single crystalline GaN thin films on Si,,111... substrates by high vacuum metalorganic chemical vapor deposition using a single

    E-Print Network [OSTI]

    Boo, Jin-Hyo

    Growth of single crystalline GaN thin films on Si,,111... substrates by high vacuum metalorganic; published 20 August 2004 Hexagonal GaN thin films were grown on Si 111 substrates using single molecular precursor of diethylazidogallium methylhydrazine adduct, (Et)2Ga N3)HzMe], with the objectives of reducing

  16. Growth mechanisms study of microcrystalline silicon deposited by SiH{sub 4}/H{sub 2} plasma using tailored voltage waveforms

    SciTech Connect (OSTI)

    Bruneau, B., E-mail: bastien.bruneau@polytechnique.edu; Johnson, E. V. [LPICM-CNRS, Ecole Polytechnique, route de Saclay, 91128 Palaiseau (France); Wang, J. [LPICM-CNRS, Ecole Polytechnique, route de Saclay, 91128 Palaiseau (France); ICARE China-Europe Institute for Clean and Renewable Energy at Huazhong University of Science and Technology, 1037 Luoyu Road, 430074 Wuhan (China); Dornstetter, J.-C. [LPICM-CNRS, Ecole Polytechnique, route de Saclay, 91128 Palaiseau (France); TOTAL New Energies, 24 cours Michelet, 92069 Paris La Défense Cedex (France)

    2014-02-28T23:59:59.000Z

    The use of Tailored Voltage Waveforms is a technique wherein one uses non-sinusoidal waveforms with a period equivalent to RF frequencies to excite a plasma. It has been shown to be an effective technique to decouple maximum Ion Bombardment Energy (IBE) from the ion flux at the surface of the electrodes. In this paper, we use it for the first time as a way to scan through the IBE in order to study the growth mechanism of hydrogenated microcrystalline silicon using a SiH{sub 4}/H{sub 2} chemistry. We find that at critical energies, a stepwise increase in the amorphous to microcrystalline transition thickness is observed, as detected by Real Time Spectroscopic Ellipsometry. The same energy thresholds (30?eV and 70?eV) are found to be very influential on the final surface morphology of the samples, as observed by Atomic Force Microscopy. These thresholds correspond to SiH{sub x}{sup +} bulk displacement (30?eV) and H{sub x}{sup +} (70?eV) surface displacement energies. A model is therefore proposed to account for the impact of these ions on the morphology of ?c-Si:H growth.

  17. Direct Growth Graphene on Cu Nanoparticles by Chemical Vapor Deposition as Surface-Enhanced Raman Scattering Substrate for Label-Free Detection of Adenosine

    E-Print Network [OSTI]

    Xu, Shicai; Jiang, Shouzhen; Wang, Jihua; Wei, Jie; Xu, Shida; Liu, Hanping

    2015-01-01T23:59:59.000Z

    We present a graphene/Cu nanoparticle hybrids (G/CuNPs) system as a surface-enhanced Raman scattering (SERS) substrate for adenosine detection. The Cu nanoparticles wrapped around a monolayer graphene shell were directly synthesized on flat quartz by chemical vapor deposition in a mixture of methane and hydrogen. The G/CuNPs showed an excellent SERS enhancement activity for adenosine. The minimum detected concentration of the adenosine in serum was demonstrated as low as 5 nM, and the calibration curve showed a good linear response from 5 to 500 nM. The capability of SERS detection of adenosine in real normal human urine samples based on G/CuNPs was also investigated and the characteristic peaks of adenosine were still recognizable. The reproducible and the ultrasensitive enhanced Raman signals could be due to the presence of an ultrathin graphene layer. The graphene shell was able to enrich and fix the adenosine molecules, which could also efficiently maintain chemical and optical stability of G/CuNPs. Based...

  18. Direct Visualization of Initial SEI Morphology and Growth Kinetics...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Initial SEI Morphology and Growth Kinetics During Lithium Deposition by in situ Electrochemical Direct Visualization of Initial SEI Morphology and Growth Kinetics During Lithium...

  19. aqueous chemical growth: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technische Universiteit Delft 36 Growth of Large-Area Aligned Molybdenum Nanowires by High Temperature Chemical Vapor Deposition: Synthesis, Growth Mechanism, and Device...

  20. Photobiomolecular deposition of metallic particles and films

    DOE Patents [OSTI]

    Hu, Zhong-Cheng

    2005-02-08T23:59:59.000Z

    The method of the invention is based on the unique electron-carrying function of a photocatalytic unit such as the photosynthesis system I (PSI) reaction center of the protein-chlorophyll complex isolated from chloroplasts. The method employs a photo-biomolecular metal deposition technique for precisely controlled nucleation and growth of metallic clusters/particles, e.g., platinum, palladium, and their alloys, etc., as well as for thin-film formation above the surface of a solid substrate. The photochemically mediated technique offers numerous advantages over traditional deposition methods including quantitative atom deposition control, high energy efficiency, and mild operating condition requirements.

  1. Particle deposition in ventilation ducts

    E-Print Network [OSTI]

    Sippola, Mark R.

    2002-01-01T23:59:59.000Z

    and An Evaluation of Thermophoretic Deposition Rates C.1of estimated thermophoretic deposition velocities, v th+ ,of estimated thermophoretic deposition velocities, v th+ ,

  2. Vapor-deposited porous films for energy conversion

    DOE Patents [OSTI]

    Jankowski, Alan F.; Hayes, Jeffrey P.; Morse, Jeffrey D.

    2005-07-05T23:59:59.000Z

    Metallic films are grown with a "spongelike" morphology in the as-deposited condition using planar magnetron sputtering. The morphology of the deposit is characterized by metallic continuity in three dimensions with continuous and open porosity on the submicron scale. The stabilization of the spongelike morphology is found over a limited range of the sputter deposition parameters, that is, of working gas pressure and substrate temperature. This spongelike morphology is an extension of the features as generally represented in the classic zone models of growth for physical vapor deposits. Nickel coatings were deposited with working gas pressures up 4 Pa and for substrate temperatures up to 1000 K. The morphology of the deposits is examined in plan and in cross section views with scanning electron microscopy (SEM). The parametric range of gas pressure and substrate temperature (relative to absolute melt point) under which the spongelike metal deposits are produced appear universal for other metals including gold, silver, and aluminum.

  3. Solution deposition assembly

    DOE Patents [OSTI]

    Roussillon, Yann; Scholz, Jeremy H; Shelton, Addison; Green, Geoff T; Utthachoo, Piyaphant

    2014-01-21T23:59:59.000Z

    Methods and devices are provided for improved deposition systems. In one embodiment of the present invention, a deposition system is provided for use with a solution and a substrate. The system comprises of a solution deposition apparatus; at least one heating chamber, at least one assembly for holding a solution over the substrate; and a substrate curling apparatus for curling at least one edge of the substrate to define a zone capable of containing a volume of the solution over the substrate. In another embodiment of the present invention, a deposition system for use with a substrate, the system comprising a solution deposition apparatus; at heating chamber; and at least assembly for holding solution over the substrate to allow for a depth of at least about 0.5 microns to 10 mm.

  4. Ash deposit workshop: Class outline

    SciTech Connect (OSTI)

    Hatt, R. [Commercial Testing & Engineering Co., Lexington, KY (United States)

    1996-12-31T23:59:59.000Z

    Ash deposits formed from the combustion of coal and other fuels have plagued the steam production industry from the start. The ash fusion test has been around for over eighty years. As steam plant size increased, so have the problems associated with ash deposits. This workshop is designed to cover: (1) The basic types of deposits. (2) Causes of deposits. (3) Analytical procedures for resolving, or at least providing information about deposits and fuels, and (4) Deposit removal and reduction techniques.

  5. GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al{sub 2}O{sub 3} gate oxide

    SciTech Connect (OSTI)

    Merckling, C.; Brammertz, G.; Hoffmann, T. Y.; Caymax, M.; Dekoster, J. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven (Belgium); Sun, X. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium); Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284 (United States); Alian, A.; Heyns, M. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven (Belgium); Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium); Afanas'ev, V. V. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium)

    2011-04-01T23:59:59.000Z

    The integration of high carrier mobility materials into future CMOS generations is presently being studied in order to increase drive current capability and to decrease power consumption in future generation CMOS devices. If III-V materials are the candidates of choice for n-type channel devices, antimonide-based semiconductors present high hole mobility and could be used for p-type channel devices. In this work we first demonstrate the heteroepitaxy of fully relaxed GaSb epilayers on InP(001) substrates. In a second part, the properties of the Al{sub 2}O{sub 3}/GaSb interface have been studied by in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric. The interface is abrupt without any substantial interfacial layer, and is characterized by high conduction and valence band offsets. Finally, MOS capacitors show well-behaved C-V with relatively low D{sub it} along the bandgap, these results point out an efficient electrical passivation of the Al{sub 2}O{sub 3}/GaSb interface.

  6. Ultrashort pulse laser deposition of thin films

    DOE Patents [OSTI]

    Perry, Michael D. (Livermore, CA); Banks, Paul S. (Livermore, CA); Stuart, Brent C. (Fremont, CA)

    2002-01-01T23:59:59.000Z

    Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp.sup.3 /Sp.sup.2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 .mu.m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

  7. ZrN coatings deposited by high power impulse magnetron sputtering and cathodic arc techniques

    SciTech Connect (OSTI)

    Purandare, Yashodhan, E-mail: Y.Purandare@shu.ac.uk; Ehiasarian, Arutiun; Hovsepian, Papken [Nanotechnology Centre for PVD Research, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Santana, Antonio [Ionbond AG Olten, Industriestrasse 211, CH-4600 Olten (Switzerland)

    2014-05-15T23:59:59.000Z

    Zirconium nitride (ZrN) coatings were deposited on 1??m finish high speed steel and 316L stainless steel test coupons. Cathodic Arc (CA) and High Power Impulse Magnetron Sputtering (HIPIMS) + Unbalanced Magnetron Sputtering (UBM) techniques were utilized to deposit coatings. CA plasmas are known to be rich in metal and gas ions of the depositing species as well as macroparticles (droplets) emitted from the arc sports. Combining HIPIMS technique with UBM in the same deposition process facilitated increased ion bombardment on the depositing species during coating growth maintaining high deposition rate. Prior to coating deposition, substrates were pretreated with Zr{sup +} rich plasma, for both arc deposited and HIPIMS deposited coatings, which led to a very high scratch adhesion value (L{sub C2}) of 100 N. Characterization results revealed the overall thickness of the coatings in the range of 2.5??m with hardness in the range of 30–40?GPa depending on the deposition technique. Cross-sectional transmission electron microscopy and tribological experiments such as dry sliding wear tests and corrosion studies have been utilized to study the effects of ion bombardment on the structure and properties of these coatings. In all the cases, HIPIMS assisted UBM deposited coating fared equal or better than the arc deposited coatings, the reasons being discussed in this paper. Thus H+U coatings provide a good alternative to arc deposited where smooth, dense coatings are required and macrodroplets cannot be tolerated.

  8. Fast diagnostics of laser ablation used for pulsed laser deposition

    SciTech Connect (OSTI)

    Geohegan, D B

    1993-02-01T23:59:59.000Z

    The mechanisms of the laser ablation process for pulsed laser deposition thin film growth will be discussed by describing results from several implementable in situ diagnostic techniques, including gated ICCD photography, optical emission and absorption spectroscopy, ion probes and gate photon counting.

  9. Polymer electrolyte fuel cell electrodes grown by vapor deposition techniques Pascal Brault*

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Polymer electrolyte fuel cell electrodes grown by vapor deposition techniques Pascal Brault Abstract: Polymer fuel cell electrode growth using vapor deposition techniques is reviewed. The supports process: sputtering, CVD, PECVD, MOCVD. In each case, up-to-date fuel cell performances are highlighted

  10. OPTIMAL DESIGN OF A HIGH PRESSURE ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION REACTOR

    E-Print Network [OSTI]

    OPTIMAL DESIGN OF A HIGH PRESSURE ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION REACTOR K.J. BACHMANN vapor deposition (HPOMCVD) reactor for use in thin film crystal growth. The advantages of such a reactor decomposition pressures and increased control over local stoichiometry and defect formation. While we focus here

  11. Effect of high temperature deposition on CoSi{sub 2} phase formation

    SciTech Connect (OSTI)

    Comrie, C. M. [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa) [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa); MRD, iThemba LABS, P.O. Box 722, Somerset West 7129 (South Africa); Ahmed, H. [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa)] [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa); Smeets, D.; Demeulemeester, J.; Vantomme, A. [Instituut voor Kern- en Stralingsfysica, KU Leuven, B-3001 Leuven (Belgium)] [Instituut voor Kern- en Stralingsfysica, KU Leuven, B-3001 Leuven (Belgium); Turner, S.; Van Tendeloo, G. [EMAT, Universiteit Antwerpen, B-2020 Antwerpen (Belgium)] [EMAT, Universiteit Antwerpen, B-2020 Antwerpen (Belgium); Detavernier, C. [Vakgroep Vaste-Stofwetenschappen, Universiteit Gent, B-9000 Gent (Belgium)] [Vakgroep Vaste-Stofwetenschappen, Universiteit Gent, B-9000 Gent (Belgium)

    2013-06-21T23:59:59.000Z

    This paper discusses the nucleation behaviour of the CoSi to CoSi{sub 2} transformation from cobalt silicide thin films grown by deposition at elevated substrate temperatures ranging from 375 Degree-Sign C to 600 Degree-Sign C. A combination of channelling, real-time Rutherford backscattering spectrometry, real-time x-ray diffraction, and transmission electron microscopy was used to investigate the effect of the deposition temperature on the subsequent formation temperature of CoSi{sub 2}, its growth behaviour, and the epitaxial quality of the CoSi{sub 2} thus formed. The temperature at which deposition took place was observed to exert a significant and systematic influence on both the formation temperature of CoSi{sub 2} and its growth mechanism. CoSi films grown at the lowest temperatures were found to increase the CoSi{sub 2} nucleation temperature above that of CoSi{sub 2} grown by conventional solid phase reaction, whereas the higher deposition temperatures reduced the nucleation temperature significantly. In addition, a systematic change in growth mechanism of the subsequent CoSi{sub 2} growth occurs as a function of deposition temperature. First, the CoSi{sub 2} growth rate from films grown at the lower reactive deposition temperatures is substantially lower than that grown at higher reactive deposition temperatures, even though the onset of growth occurs at a higher temperature, Second, for deposition temperatures below 450 Degree-Sign C, the growth appears columnar, indicating nucleation controlled growth. Elevated deposition temperatures, on the other hand, render the CoSi{sub 2} formation process layer-by-layer which indicates enhanced nucleation of the CoSi{sub 2} and diffusion controlled growth. Our results further indicate that this observed trend is most likely related to stress and changes in microstructure introduced during reactive deposition of the CoSi film. The deposition temperature therefore provides a handle to tune the CoSi{sub 2} growth mechanism.

  12. Uranium deposits of Brazil

    SciTech Connect (OSTI)

    NONE

    1991-09-01T23:59:59.000Z

    Brazil is a country of vast natural resources, including numerous uranium deposits. In support of the country`s nuclear power program, Brazil has developed the most active uranium industry in South America. Brazil has one operating reactor (Angra 1, a 626-MWe PWR), and two under construction. The country`s economic challenges have slowed the progress of its nuclear program. At present, the Pocos de Caldas district is the only active uranium production. In 1990, the Cercado open-pit mine produced approximately 45 metric tons (MT) U{sub 3}O{sub 8} (100 thousand pounds). Brazil`s state-owned uranium production and processing company, Uranio do Brasil, announced it has decided to begin shifting its production from the high-cost and nearly depleted deposits at Pocos de Caldas, to lower-cost reserves at Lagoa Real. Production at Lagoa Real is schedules to begin by 1993. In addition to these two districts, Brazil has many other known uranium deposits, and as a whole, it is estimated that Brazil has over 275,000 MT U{sub 3}O{sub 8} (600 million pounds U{sub 3}O{sub 8}) in reserves.

  13. Multi-chamber deposition system

    DOE Patents [OSTI]

    Jacobson, Richard L. (Roseville, MN); Jeffrey, Frank R. (Shoreview, MN); Westerberg, Roger K. (Cottage Grove, MN)

    1989-06-27T23:59:59.000Z

    A system for the simultaneous deposition of different coatings onto a thin web within a large volume vacuum chamber is disclosed which chamber is provided with a plurality of deposition chambers in which the different layers are deposited onto the film as its moves from a supply roll to a finished take-up roll of coated web. The deposition chambers provided within the large vacuum chamber are provided with separate seals which minimize back diffusion of any dopant gas from adjacent deposition chambers.

  14. Multi-chamber deposition system

    DOE Patents [OSTI]

    Jacobson, Richard L. (Roseville, MN); Jeffrey, Frank R. (Shoreview, MN); Westerberg, Roger K. (Cottage Grove, MN)

    1989-10-17T23:59:59.000Z

    A system for the simultaneous deposition of different coatings onto a thin web within a large volume vacuum chamber is disclosed which chamber is provided with a plurality of deposition chambers in which the different layers are deposited onto the film as its moves from a supply roll to a finished take-up roll of coated web. The deposition chambers provided within the large vacuum chamber are provided with separate seals which minimize back diffusion of any dopant gas from adjacent deposition chambers.

  15. Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1 Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition. Kassem Ilmenau (Germany) Abstract. In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface

  16. Perspectives on Deposition Velocity

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33Frequently Asked QuestionsDepartmentGas and| Department ofPersonnel AccountabilityDeposition

  17. Graphene growth with giant domains using chemical vapor deposition

    E-Print Network [OSTI]

    Yong, Virginia; Hahn, H. Thomas

    2011-01-01T23:59:59.000Z

    N. Martensson, Controlling graphene corrugation on lattice-in patterned epitaxial graphene, Science, 2006, 312(5777), 92009, 4(6), 17 A. K. Geim, Graphene: Status and Prospects,

  18. Atomic and molecular layer deposition for surface modification

    SciTech Connect (OSTI)

    Vähä-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.fi [VTT Technical Research Centre of Finland, PO Box 1000, FI?02044 VTT (Finland); Sievänen, Jenni; Salo, Erkki; Heikkilä, Pirjo; Kenttä, Eija [VTT Technical Research Centre of Finland, PO Box 1000, FI?02044 VTT (Finland); Johansson, Leena-Sisko, E-mail: leena-sisko.johansson@aalto.fi [Aalto University, School of Chemical Technology, Department of Forest Products Technology, PO Box 16100, FI?00076 AALTO (Finland); Koskinen, Jorma T.; Harlin, Ali [VTT Technical Research Centre of Finland, PO Box 1000, FI?02044 VTT (Finland)

    2014-06-01T23:59:59.000Z

    Atomic and molecular layer deposition (ALD and MLD, respectively) techniques are based on repeated cycles of gas–solid surface reactions. A partial monolayer of atoms or molecules is deposited to the surface during a single deposition cycle, enabling tailored film composition in principle down to molecular resolution on ideal surfaces. Typically ALD/MLD has been used for applications where uniform and pinhole free thin film is a necessity even on 3D surfaces. However, thin – even non-uniform – atomic and molecular deposited layers can also be used to tailor the surface characteristics of different non-ideal substrates. For example, print quality of inkjet printing on polymer films and penetration of water into porous nonwovens can be adjusted with low-temperature deposited metal oxide. In addition, adhesion of extrusion coated biopolymer to inorganic oxides can be improved with a hybrid layer based on lactic acid. - Graphical abstract: Print quality of a polylactide film surface modified with atomic layer deposition prior to inkjet printing (360 dpi) with an aqueous ink. Number of printed dots illustrated as a function of 0, 5, 15 and 25 deposition cycles of trimethylaluminum and water. - Highlights: • ALD/MLD can be used to adjust surface characteristics of films and fiber materials. • Hydrophobicity after few deposition cycles of Al{sub 2}O{sub 3} due to e.g. complex formation. • Same effect on cellulosic fabrics observed with low temperature deposited TiO{sub 2}. • Different film growth and oxidation potential with different precursors. • Hybrid layer on inorganic layer can be used to improve adhesion of polymer melt.

  19. Approach to fabricating Co nanowire arrays with perpendicular anisotropy: Application of a magnetic field during deposition

    SciTech Connect (OSTI)

    Ge, Shihui; Li, Chao; Ma, Xiao; Li, Wei; Xi, Li; Li, C. X.

    2001-07-01T23:59:59.000Z

    Cobalt (Co) nanowire arrays were electrodeposited into the pores of polycarbonate membranes. A magnetic field parallel or perpendicular to the membrane plane was applied during deposition to control the wire growth. X-ray diffraction, transmission electron microscopy, and vibrating sample magnetometer were employed to investigate the structure as well as the magnetic properties of the nanowire arrays. The results show that the magnetic field applied during deposition strongly influences the growth of Co nanowires, inducing variations in their crystalline structure and magnetic properties. The sample deposited with the field perpendicular to the membrane plane exhibits a perpendicular magnetic anisotropy with greatly enhanced coercivity and squareness as a result of the preferred growth of Co grains with the c axis perpendicular to the film plane. In contrast, the deposition in a parallel magnetic field forces Co grains to grow with the c axis parallel to the film plane, resulting in in-plane anisotropy. {copyright} 2001 American Institute of Physics.

  20. Static magnetic and microwave properties of Li-ferrite films prepared by pulsed laser deposition

    E-Print Network [OSTI]

    Patton, Carl

    Static magnetic and microwave properties of Li-ferrite films prepared by pulsed laser deposition F University, Fort Collins, Colorado 80523 Highly textured Li-ferrite films have been synthesized by pulsed approaching 1000 °C the growth mode was predominantly 333 . A similar growth mode was recently reported for Ni-ferrite

  1. Lemniscate growth

    E-Print Network [OSTI]

    2012-05-08T23:59:59.000Z

    May 8, 2012 ... [8], (mem)Brane theory [3], elliptic growth [11], and non-Newtonian Hele-Shaw flows [5]. ...... a loose connection to non-Newtonian fluids.

  2. Mask-assisted seeded growth of segmented metallic heteronanostructures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Crane, Cameron C.; Tao, Jing; Wang, Feng; Zhu, Yimei; Chen, Jingyi

    2014-12-04T23:59:59.000Z

    Controlling the deposition of exotic metals in the seeded growth of multi-metal nanostructures is challenging. This work describes a seeded growth method assisted by a mask for synthesis of segmented binary or ternary metal nanostructures. Silica is used as a mask to partially block the surface of a seed and a second metal is subsequently deposited on the exposed area, forming a bimetallic heterodimer. The initial demonstration was carried out on a Au seed, followed by deposition of Pd or Pt on the seed. It was found that Pd tends to spread out laterally on the seed while Pt inclinesmore »to grow vertically into branched topology on Au. Without removal of the SiO? mask, Pt could be further deposited on the unblocked Pd of the Pd-Au dimer to form a Pt-Pd-Au trimer. The mask-assisted seeded growth provides a general strategy to construct segmented metallic nanoarchitectures.« less

  3. Mask-assisted seeded growth of segmented metallic heteronanostructures

    SciTech Connect (OSTI)

    Crane, Cameron C. [Univ. of Arkansas, Fayetteville, AR (United States); Tao, Jing [Brookhaven National Lab. (BNL), Upton, NY (United States); Wang, Feng [Univ. of Arkansas, Fayetteville, AR (United States); Zhu, Yimei [Brookhaven National Lab. (BNL), Upton, NY (United States); Chen, Jingyi [Univ. of Arkansas, Fayetteville, AR (United States)

    2014-12-04T23:59:59.000Z

    Controlling the deposition of exotic metals in the seeded growth of multi-metal nanostructures is challenging. This work describes a seeded growth method assisted by a mask for synthesis of segmented binary or ternary metal nanostructures. Silica is used as a mask to partially block the surface of a seed and a second metal is subsequently deposited on the exposed area, forming a bimetallic heterodimer. The initial demonstration was carried out on a Au seed, followed by deposition of Pd or Pt on the seed. It was found that Pd tends to spread out laterally on the seed while Pt inclines to grow vertically into branched topology on Au. Without removal of the SiO? mask, Pt could be further deposited on the unblocked Pd of the Pd-Au dimer to form a Pt-Pd-Au trimer. The mask-assisted seeded growth provides a general strategy to construct segmented metallic nanoarchitectures.

  4. Analysis of gallium arsenide deposition in a horizontal chemical vapor deposition reactor using massively parallel computations

    SciTech Connect (OSTI)

    Salinger, A.G.; Shadid, J.N.; Hutchinson, S.A. [and others

    1998-01-01T23:59:59.000Z

    A numerical analysis of the deposition of gallium from trimethylgallium (TMG) and arsine in a horizontal CVD reactor with tilted susceptor and a three inch diameter rotating substrate is performed. The three-dimensional model includes complete coupling between fluid mechanics, heat transfer, and species transport, and is solved using an unstructured finite element discretization on a massively parallel computer. The effects of three operating parameters (the disk rotation rate, inlet TMG fraction, and inlet velocity) and two design parameters (the tilt angle of the reactor base and the reactor width) on the growth rate and uniformity are presented. The nonlinear dependence of the growth rate uniformity on the key operating parameters is discussed in detail. Efficient and robust algorithms for massively parallel reacting flow simulations, as incorporated into our analysis code MPSalsa, make detailed analysis of this complicated system feasible.

  5. Variable temperature semiconductor film deposition

    DOE Patents [OSTI]

    Li, Xiaonan (Golden, CO); Sheldon, Peter (Lakewood, CO)

    1998-01-01T23:59:59.000Z

    A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  6. Variable temperature semiconductor film deposition

    DOE Patents [OSTI]

    Li, X.; Sheldon, P.

    1998-01-27T23:59:59.000Z

    A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  7. OCTOBER 1990 DEPOSITION AND REMOVAL

    E-Print Network [OSTI]

    , shielding, resuspension, indoor deposition, the relative airborne con- centrations indoors and outdoors RESUSPENSION; PLANTS; RADIATION DOSE DISTRIBUTION; REMEDIAL ACTION; SHIELDING; SURFACE CONTAMINATION; URBAN effected by road traffic, and street cleaning the degree of resuspension, i.e. the return of deposited

  8. Tritium deposition patterns in TFTR

    E-Print Network [OSTI]

    Princeton Plasma Physics Laboratory

    Tritium deposition patterns in TFTR Presented by C. H. Skinner with key contributions from Charles, JAERI #12;· TFTR was a limiter machine - no divertor. · Operated with tritium Nov `93 - April `97. · NetV Limiter Temperature @ 28 MW NBI Low density, high temperature edge #12;Tritium deposition patterns in TFTR

  9. Spatially resolved mineral deposition on patterned self-assembled monolayers

    SciTech Connect (OSTI)

    Rieke, P.C.; Tarasevich, B.J.; Wood, L.L.; Engelhard, M.H.; Baer, D.R.; Fryxell, G.E. (Pacific Northwest Lab., Richland, WA (United States)); John, C.M. (Charles Evans Associates, Redwood City, CA (United States)); Laken, D.A.; Jaehnig, M.C. (FEI Corp., Beaverton, OR (United States))

    1994-03-01T23:59:59.000Z

    Electron and ion beam lithographic techniques were used to pattern self-assembled monolayers with organic functional groups. Nucleation and growth of minerals from aqueous solution were confined to the patterned regions. A vinyl-terminated self-assembled monolayer (SAM) was selectively deposited in ion and electron beam etched regions of a methyl-terminated SAM. Sulfonation of the vinyl groups produced a surface patterned in either hydrophobic methyl groups or hydrophilic sulfonate groups. Subsequent growth of FeOOH films was confined to the sulfonated regions. Condensation images were used to image each step in the lithographic scheme. Resolution of the SAM patterning step was 1-3 [mu]m, while resolution of the mineral deposition step was 10-15 [mu]m. 15 refs., 3 figs.

  10. Molecular layer deposition of alucone films using trimethylaluminum and hydroquinone

    SciTech Connect (OSTI)

    Choudhury, Devika; Sarkar, Shaibal K., E-mail: shaibal.sarkar@iitb.ac.in [Department of Energy Science and Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Mahuli, Neha [Centre for Research in Nanotechnology and Science, Indian Institute of Technology Bombay, Mumbai 400076 (India)

    2015-01-01T23:59:59.000Z

    A hybrid organic–inorganic polymer film grown by molecular layer deposition (MLD) is demonstrated here. Sequential exposures of trimethylaluminum [Al(CH{sub 3}){sub 3}] and hydroquinone [C{sub 6}H{sub 4}(OH){sub 2}] are used to deposit the polymeric films, which is a representative of a class of aluminum oxide polymers known as “alucones.” In-situ quartz crystal microbalance (QCM) studies are employed to determine the growth characteristics. An average growth rate of 4.1 Å per cycle at 150?°C is obtained by QCM and subsequently verified with x-ray reflectivity measurements. Surface chemistry during each MLD-half cycle is studied in depth by in-situ Fourier transform infrared (FTIR) vibration spectroscopy. Self limiting nature of the reaction is confirmed from both QCM and FTIR measurements. The conformal nature of the deposit, typical for atomic layer deposition and MLD, is verified with transmission electron microscopy imaging. Secondary ion mass spectroscopy measurements confirm the uniform elemental distribution along the depth of the films.

  11. The role of inert gas in MW-enhanced plasmas for the deposition of nanocrystalline diamond thin films

    E-Print Network [OSTI]

    Bristol, University of

    in polycrystalline diamond film CVD [3,4]. While the mechanical, thermal and acoustic properties of MCD films haveThe role of inert gas in MW-enhanced plasmas for the deposition of nanocrystalline diamond thin diamond Nanocrystalline Inert gas Growth Nanocrystalline diamond thin films have been deposited using

  12. Property transformation of graphene with Al{sub 2}O{sub 3} films deposited directly by atomic layer deposition

    SciTech Connect (OSTI)

    Zheng, Li; Cao, Duo; Wang, Zhongjian; Xia, Chao [State Key Laboratory of Functional Materials for Informatics, SIMIT, Chinese Academy of Sciences, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Cheng, Xinhong, E-mail: xh-cheng@mail.sim.ac.cn; Yu, Yuehui [State Key Laboratory of Functional Materials for Informatics, SIMIT, Chinese Academy of Sciences, Shanghai 200050 (China); Shen, Dashen [University of Alabama in Huntsville, Huntsville, Alabama 35899 (United States)

    2014-01-13T23:59:59.000Z

    Al{sub 2}O{sub 3} films are deposited directly onto graphene by H{sub 2}O-based atomic layer deposition (ALD), and the films are pinhole-free and continuously cover the graphene surface. The growth process of Al{sub 2}O{sub 3} films does not introduce any detective defects in graphene, suppresses the hysteresis effect and tunes the graphene doping to n-type. The self-cleaning of ALD growth process, together with the physically absorbed H{sub 2}O and oxygen-deficient ALD environment consumes OH{sup ?} bonds, suppresses the p-doping of graphene, shifts Dirac point to negative gate bias and enhances the electron mobility.

  13. TULSA UNIVERSITY PARAFFIN DEPOSITION PROJECTS

    SciTech Connect (OSTI)

    Michael Volk; Cem Sarica

    2003-10-01T23:59:59.000Z

    As oil and gas production moves to deeper and colder water, subsea multiphase production systems become critical for economic feasibility. It will also become increasingly imperative to adequately identify the conditions for paraffin precipitation and predict paraffin deposition rates to optimize the design and operation of these multiphase production systems. Although several oil companies have paraffin deposition predictive capabilities for single-phase oil flow, these predictive capabilities are not suitable for the multiphase flow conditions encountered in most flowlines and wellbores. For deepwater applications in the Gulf of Mexico, it is likely that multiphase production streams consisting of crude oil, produced water and gas will be transported in a single multiphase pipeline to minimize capital cost and complexity at the mudline. Existing single-phase (crude oil) paraffin deposition predictive tools are clearly inadequate to accurately design these pipelines because they do not account for the second and third phases, namely, produced water and gas. The objective of this program is to utilize the current test facilities at The University of Tulsa, as well as member company expertise, to accomplish the following: enhance our understanding of paraffin deposition in single and two-phase (gas-oil) flows; conduct focused experiments to better understand various aspects of deposition physics; and, utilize knowledge gained from experimental modeling studies to enhance the computer programs developed in the previous JIP for predicting paraffin deposition in single and two-phase flow environments. These refined computer models will then be tested against field data from member company pipelines. The following deliverables are scheduled during the first three projects of the program: (1) Single-Phase Studies, with three different black oils, which will yield an enhanced computer code for predicting paraffin deposition in deepwater and surface pipelines. (2) Two-Phase Studies, with a focus on heat transfer and paraffin deposition at various pipe inclinations, which will be used to enhance the paraffin deposition code for gas-liquid flow in pipes. (3) Deposition Physics and Water Impact Studies, which will address the aging process, improve our ability to characterize paraffin deposits and enhance our understanding of the role water plays in paraffin deposition in deepwater pipelines. As in the previous two studies, knowledge gained in this suite of studies will be integrated into a state-of-the-art three-phase paraffin deposition computer program.

  14. Sol-Gel Deposited Electrochromic Coatings

    E-Print Network [OSTI]

    Ozer, N.

    2010-01-01T23:59:59.000Z

    R A T O R Y Sol-Gel Deposited Electrochromic Coatings NilgunUC-1600 Sol-Gel Deposited Electrochromic Coatings NilgunPaper Sol-gel Deposited Electrochromic Coatings Nilgun Ozer

  15. On the dry deposition of submicron particles

    SciTech Connect (OSTI)

    Wesely, M. L.

    1999-10-08T23:59:59.000Z

    The air-surface exchange of particles can have a strong role in determining the amount, size, and chemical composition of particles in the troposphere. Here the authors consider only dry processes (deposition processes not directly aided by precipitation) and mostly address particles less than about 2 {micro}m in diameter (often referred to as submicron particles because most of such particles are less than 1 {micro}m in diameter). The processes that control the dry exchange of particulate material between the atmosphere and the surface of the Earth are numerous, highly varied, and sometimes poorly understood. As a result, determining which of the surface processes to parameterize or simulate in modeling the tropospheric mass budget of a particulate substance can be a significant challenge. Dry deposition, for example, can be controlled by a combination of Brownian diffusion, impaction, interception, and gravitational settling, depending on the size of the particles, the roughness of the surface on both micrometeorological and microscopic scales, the geometrical structure of vegetative canopies, and other surface characteristics such as wetness. Particles can be added to the lower atmosphere by resuspension from land surfaces and sea spray. The roles of rapid gas-to-particle conversion and growth or shrinkage of particles as a result of water condensation or evaporation in the lower few meters of the atmosphere can also have a significant impact on particle concentrations in the lower atmosphere. Here, a few micrometeorological observations and inferences on particle air-surface exchange are briefly addressed.

  16. Particle deposition in ventilation ducts

    SciTech Connect (OSTI)

    Sippola, Mark R.

    2002-09-01T23:59:59.000Z

    Exposure to airborne particles is detrimental to human health and indoor exposures dominate total exposures for most people. The accidental or intentional release of aerosolized chemical and biological agents within or near a building can lead to exposures of building occupants to hazardous agents and costly building remediation. Particle deposition in heating, ventilation and air-conditioning (HVAC) systems may significantly influence exposures to particles indoors, diminish HVAC performance and lead to secondary pollutant release within buildings. This dissertation advances the understanding of particle behavior in HVAC systems and the fates of indoor particles by means of experiments and modeling. Laboratory experiments were conducted to quantify particle deposition rates in horizontal ventilation ducts using real HVAC materials. Particle deposition experiments were conducted in steel and internally insulated ducts at air speeds typically found in ventilation ducts, 2-9 m/s. Behaviors of monodisperse particles with diameters in the size range 1-16 {micro}m were investigated. Deposition rates were measured in straight ducts with a fully developed turbulent flow profile, straight ducts with a developing turbulent flow profile, in duct bends and at S-connector pieces located at duct junctions. In straight ducts with fully developed turbulence, experiments showed deposition rates to be highest at duct floors, intermediate at duct walls, and lowest at duct ceilings. Deposition rates to a given surface increased with an increase in particle size or air speed. Deposition was much higher in internally insulated ducts than in uninsulated steel ducts. In most cases, deposition in straight ducts with developing turbulence, in duct bends and at S-connectors at duct junctions was higher than in straight ducts with fully developed turbulence. Measured deposition rates were generally higher than predicted by published models. A model incorporating empirical equations based on the experimental measurements was applied to evaluate particle losses in supply and return duct runs. Model results suggest that duct losses are negligible for particle sizes less than 1 {micro}m and complete for particle sizes greater than 50 {micro}m. Deposition to insulated ducts, horizontal duct floors and bends are predicted to control losses in duct systems. When combined with models for HVAC filtration and deposition to indoor surfaces to predict the ultimate fates of particles within buildings, these results suggest that ventilation ducts play only a small role in determining indoor particle concentrations, especially when HVAC filtration is present. However, the measured and modeled particle deposition rates are expected to be important for ventilation system contamination.

  17. Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth

    DOE Patents [OSTI]

    Fan, John C. C. (Chestnut Hill, MA); Tsaur, Bor-Yeu (Arlington, MA); Gale, Ronald P. (Bedford, MA); Davis, Frances M. (Framingham, MA)

    1986-12-30T23:59:59.000Z

    Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.

  18. Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth

    DOE Patents [OSTI]

    Fan, John C. C. (Chestnut Hill, MA); Tsaur, Bor-Yeu (Arlington, MA); Gale, Ronald P. (Bedford, MA); Davis, Frances M. (Framingham, MA)

    1992-02-25T23:59:59.000Z

    Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.

  19. Vibration atomic layer deposition for conformal nanoparticle coating

    SciTech Connect (OSTI)

    Park, Suk Won; Woo Kim, Jun; Jong Choi, Hyung; Hyung Shim, Joon, E-mail: shimm@korea.ac.kr [School of Mechanical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

    2014-01-15T23:59:59.000Z

    A vibration atomic layer deposition reactor was developed for fabricating a conformal thin-film coating on nanosize particles. In this study, atomic layer deposition of 10–15-nm-thick Al{sub 2}O{sub 3} films was conducted on a high-surface-area acetylene black powder with particle diameters of 200–250?nm. Intense vibration during the deposition resulted in the effective separation of particles, overcoming the interparticle agglomeration force and enabling effective diffusion of the precursor into the powder chunk; this phenomenon led to the formation of a conformal film coating on the nanopowder particles. It was also confirmed that the atomic layer deposition Al{sub 2}O{sub 3} films initially grew on the high-surface-area acetylene black powder particles as discrete islands, presumably because chemisorption of the precursor and water occurred only on a few sites on the high-surface-area acetylene black powder surface. Relatively sluggish growth of the films during the initial atomic layer deposition cycles was identified from composition analysis.

  20. Sol-Gel Deposited Electrochromic Coatings

    E-Print Network [OSTI]

    Ozer, N.

    2010-01-01T23:59:59.000Z

    Handbook of Inorganic Electrochromic Materials, Elsevier, .O R Y Sol-Gel Deposited Electrochromic Coatings Nilgun Ozer1600 Sol-Gel Deposited Electrochromic Coatings Nilgun Ozer

  1. Linked Deposit Loan Program (Kentucky)

    Broader source: Energy.gov [DOE]

    The Linked Deposit Program provides loan financing for small businesses of up to $100,000 for up to 7 years. The State Investment Commission invests funds from the state's Abandoned Property Cash...

  2. Seasonalepisodic control of acid deposition

    E-Print Network [OSTI]

    Fay, James A.

    1988-01-01T23:59:59.000Z

    This report contains the climatological, technical and economic factors for episodic and seasonal control of emissions in existing power plants. Analyzing a large data set of acid deposition for the years 1982-85, we find ...

  3. Particle deposition in ventilation ducts

    E-Print Network [OSTI]

    Sippola, Mark R.

    2002-01-01T23:59:59.000Z

    were observed to lead to resuspension of particles in thethe nozzles may lead to resuspension of deposited particles.resuspension, the decreased response to turbulent velocity fluctuations of the very large particles should lead

  4. The development of chemically vapor deposited mullite coatings for the corrosion protection of SiC

    SciTech Connect (OSTI)

    Auger, M.; Hou, P.; Sengupta, A.; Basu, S.; Sarin, V. [Boston Univ., MA (United States)

    1998-05-01T23:59:59.000Z

    Crystalline mullite coatings have been chemically vapor deposited onto SiC substrates to enhance the corrosion and oxidation resistance of the substrate. Current research has been divided into three distinct areas: (1) Development of the deposition processing conditions for increased control over coating`s growth rate, microstructure, and morphology; (2) Analysis of the coating`s crystal structure and stability; (3) The corrosion resistance of the CVD mullite coating on SiC.

  5. Chemical enhancement of surface deposition

    DOE Patents [OSTI]

    Patch, Keith D. (Lexington, MA); Morgan, Dean T. (Sudbury, MA)

    1997-07-29T23:59:59.000Z

    A method and apparatus for increasing the deposition of ions onto a surface, such as the adsorption of uranium ions on the detecting surface of a radionuclide detector. The method includes the step of exposing the surface to a complexing agent, such as a phosphate ion solution, which has an affinity for the dissolved species to be deposited on the surface. This provides, for example, enhanced sensitivity of the radionuclide detector.

  6. Vapor deposition of hardened niobium

    DOE Patents [OSTI]

    Blocher, Jr., John M. (Columbus, OH); Veigel, Neil D. (Columbus, OH); Landrigan, Richard B. (Columbus, OH)

    1983-04-19T23:59:59.000Z

    A method of coating ceramic nuclear fuel particles containing a major amount of an actinide ceramic in which the particles are placed in a fluidized bed maintained at ca. 800.degree. to ca. 900.degree. C., and niobium pentachloride vapor and carbon tetrachloride vapor are led into the bed, whereby niobium metal is deposited on the particles and carbon is deposited interstitially within the niobium. Coating apparatus used in the method is also disclosed.

  7. Chemical enhancement of surface deposition

    DOE Patents [OSTI]

    Patch, K.D.; Morgan, D.T.

    1997-07-29T23:59:59.000Z

    A method and apparatus are disclosed for increasing the deposition of ions onto a surface, such as the adsorption of uranium ions on the detecting surface of a radionuclide detector. The method includes the step of exposing the surface to a complexing agent, such as a phosphate ion solution, which has an affinity for the dissolved species to be deposited on the surface. This provides, for example, enhanced sensitivity of the radionuclide detector. 16 figs.

  8. A Radon Progeny Deposition Model

    E-Print Network [OSTI]

    V. E. Guiseppe; S. R. Elliott; A. Hime; K. Rielage; S. Westerdale

    2010-12-30T23:59:59.000Z

    The next generation low-background detectors operating underground aim for unprecedented low levels of radioactive backgrounds. Although the radioactive decays of airborne radon (particularly Rn-222) and its subsequent progeny present in an experiment are potential backgrounds, also problematic is the deposition of radon progeny on detector materials. Exposure to radon at any stage of assembly of an experiment can result in surface contamination by progeny supported by the long half life (22 y) of Pb-210 on sensitive locations of a detector. An understanding of the potential surface contamination from deposition will enable requirements of radon-reduced air and clean room environments for the assembly of low background experiments. It is known that there are a number of environmental factors that govern the deposition of progeny onto surfaces. However, existing models have not explored the impact of some environmental factors important for low background experiments. A test stand has been constructed to deposit radon progeny on various surfaces under a controlled environment in order to develop a deposition model. Results from this test stand and the resulting deposition model are presented.

  9. Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor

    SciTech Connect (OSTI)

    Wei, Daming [Kansas State University; Hossain, T [Kansas State University; Garces, N. Y. [Naval Research Laboratory, Washington, D.C.; Nepal, N. [Naval Research Laboratory, Washington, D.C.; Meyer III, Harry M [ORNL; Kirkham, Melanie J [ORNL; Eddy, C.R., Jr. [Naval Research Laboratory, Washington, D.C.; Edgar, J H [Kansas State University

    2013-01-01T23:59:59.000Z

    This paper reports on the influence of temperature on the structure, composition, and electrical properties of TiO2 thin films deposited on n-type silicon (100) by atomic layer deposition (ALD). TiO2 layers around 20nm thick, deposited at temperatures ranging from 100 to 300 C, were studied. Samples deposited at 250 C and 200 C had the most uniform coverage as determined by atomic force microscopy. The average carbon concentration throughout the oxide layer and at the TiO2/Si interface was lowest at 200 C. Metal oxide semiconductor capacitors (MOSCAPs) were fabricated, and profiled by capacitance-voltage techniques. Negligible hysteresis was observed from a capacitance-voltage plot and the capacitance in the accumulation region was constant for the sample prepared at a 200 C ALD growth temperature. The interface trap density was on the order of 1013 eV-1cm-2 regardless of the deposition temperature.

  10. Potpourri of deposition and resuspension questions

    SciTech Connect (OSTI)

    Slinn, W.G.N.

    1983-01-01T23:59:59.000Z

    Twenty questions and answers are listed dealing with particulate deposition, resuspension, and precipitation scavenging.

  11. Metal film deposition by laser breakdown chemical vapor deposition

    SciTech Connect (OSTI)

    Jervis, T.R.

    1985-01-01T23:59:59.000Z

    Dielectric breakdown of gas mixtures can be used to deposit homogeneous thin films by chemical vapor deposition with appropriate control of flow and pressure conditions to suppress gas phase nucleation and particle formation. Using a pulsed CO/sub 2/ laser operating at 10.6 microns where there is no significant resonant absorption in any of the source gases, we have succeeded in depositing homogeneous films from several gas phase precursors by gas phase laser pyrolysis. Nickel and molybdenum from the respective carbonyls and tungsten from the hexafluoride have been examined to date. In each case the gas precursor is buffered to reduce the partial pressure of the reactants and to induce breakdown. The films are spectrally reflective and uniform over a large area. Films have been characterized by Auger electron spectroscopy, x-ray diffraction, pull tests, and resistivity measurements. The highest quality films have resulted from the nickel depositions. Detailed x-ray diffraction analysis of these films yields a very small domain size (approx. 50 A) consistent with rapid quenching from the gas phase reaction zone. This analysis also shows nickel carbide formation consistent with the temperature of the reaction zone and the Auger electron spectroscopy results which show some carbon and oxygen incorporation (8% and 1% respectively). Gas phase transport and condensation of the molybdenum carbonyl results in substantial carbon and oxygen contamination of the molybdenum films requiring heated substrates, a requirement not consistent with the goals of the program to maximize the quench rate of the deposition. Results from tungsten deposition experiments representing a reduction chemistry instead of the decomposition chemistry involved in the carbonyl experiments are also reported.

  12. Cadmium zinc sulfide by solution growth

    DOE Patents [OSTI]

    Chen, Wen S. (Seattle, WA)

    1992-05-12T23:59:59.000Z

    A process for depositing thin layers of a II-VI compound cadmium zinc sulfide (CdZnS) by an aqueous solution growth technique with quality suitable for high efficiency photovoltaic or other devices which can benefit from the band edge shift resulting from the inclusion of Zn in the sulfide. A first solution comprising CdCl.sub.2 2.5H.sub.2 O, NH.sub.4 Cl, NH.sub.4 OH and ZnCl.sub.2, and a second solution comprising thiourea ((NH.sub.2).sub.2 CS) are combined and placed in a deposition cell, along with a substrate to form a thin i.e. 10 nm film of CdZnS on the substrate. This process can be sequentially repeated with to achieve deposition of independent multiple layers having different Zn concentrations.

  13. Direct growth of graphene on Si(111)

    SciTech Connect (OSTI)

    Thanh Trung, Pham, E-mail: phamtha@fundp.ac.be; Joucken, Frédéric; Colomer, Jean-François; Robert, Sporken [Research Center in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), 61 Rue de Bruxelles, 5000 Namur (Belgium); Campos-Delgado, Jessica; Raskin, Jean-Pierre [Electrical Engineering (ELEN), Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Université catholique de Louvain UCL, 3 place du Levant, Louvain-la-Neuve (Belgium); Hackens, Benoît; Santos, Cristiane N. [Nanoscopic physics (NAPS), Institute of Condensed Matter and Nanosciences (IMCN), Université catholique de Louvain UCL, 2 chemin du Cyclotron, Louvain-la-Neuve (Belgium)

    2014-06-14T23:59:59.000Z

    Due to the need of integrated circuit in the current silicon technology, the formation of graphene on Si wafer is highly desirable, but is still a challenge for the scientific community. In this context, we report the direct growth of graphene on Si(111) wafer under appropriate conditions using an electron beam evaporator. The structural quality of the material is investigated in detail by reflection high energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, high resolution scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. Our experimental results confirm that the quality of graphene is strongly dependent on the growth time during carbon atoms deposition.

  14. Temperature dependent effects during Ag deposition on Cu(110)

    SciTech Connect (OSTI)

    Taylor, T.N.; Muenchausen, R.E.; Hoffbauer, M.A.; Denier van der Gon, A.W.; van der Veen, J.F. (Los Alamos National Lab., NM (USA); FOM-Instituut voor Atoom-en Molecuulfysica, Amsterdam (Netherlands))

    1989-01-01T23:59:59.000Z

    The composition, structure, and morphology of ultrathin films grown by Ag deposition on Cu(110) were monitored as a function of temperature using low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), and medium energy ion scattering (MEIS). Aligned backscattering measurements with 150 keV He ions indicate that the Ag resides on top of the Cu and there is no significant surface compound formation. Measurements with LEED show that the Ag is initially confined to the substrate troughs. Further deposition forces the Ag out of the troughs and results in a split c(2 {times} 4) LEED pattern, which is characteristic of a distorted Ag(111) monolayer template. As verified by both AES and MEIS measurements, postmonolayer deposition of Ag on Cu(110) at 300K leads to a pronounced 3-dimensional clustering. Ion blocking analysis of the Ag clusters show that the crystallites have a (110)-like growth orientation, implying that the Ag monolayer template undergoes a rearrangement. These data are confirmed by low temperature LEED results in the absence of clusters, which indicate that Ag multilayers grow from a Ag--Cu interface where the Ag is captured in the troughs. Changes observed in the film structure and morphology are consistent with a film growth mechanism that is driven by overlayer strain response to the substrate corrugation. 16 refs., 4 figs.

  15. Conductive layer for biaxially oriented semiconductor film growth

    DOE Patents [OSTI]

    Findikoglu, Alp T. (Los Alamos, NM); Matias, Vladimir (Santa Fe, NM)

    2007-10-30T23:59:59.000Z

    A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.

  16. Nanowire-templated lateral epitaxial growth of non-polar group III nitrides

    DOE Patents [OSTI]

    Wang, George T. (Albuquerque, NM); Li, Qiming (Albuquerque, NM); Creighton, J. Randall (Albuquerque, NM)

    2010-03-02T23:59:59.000Z

    A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.

  17. Catalyst proximity effects on the growth rate of Si nanowires S. T. Boles,1,a

    E-Print Network [OSTI]

    and a silane precursor in a cold-wall chemical vapor deposition CVD system, where the precursor decomposition and experimental design, we have identified a fundamental aspect of growth of Si nanowires using the VLS mechanism

  18. MOCVD growth of In GaP-based heterostructures for light emitting devices

    E-Print Network [OSTI]

    McGill, Lisa Megan, 1975-

    2004-01-01T23:59:59.000Z

    In this work, we examine fundamental materials processes in the growth of indium gallium phosphide (InGaP) via metalorganic chemical vapor deposition (MOCVD). In particular, we realize improvements in the epitaxial integration ...

  19. Study of Growth of Carbon Nanotubes on Pure Metal and Metal Alloy Electrodes

    E-Print Network [OSTI]

    the surface prior to the CNT growth. Cupro-Nickel alloys and electroless Ni plated Cu were not suitable. Electroless Ni coated Monel and Ni deposited Si wafer with 20 nm Cr under layer gave the highest density

  20. TULSA UNIVERSITY PARAFFIN DEPOSITION PROJECTS

    SciTech Connect (OSTI)

    Cem Sarica; Michael Volk

    2004-06-01T23:59:59.000Z

    As oil and gas production moves to deeper and colder water, subsea multiphase production systems become critical for economic feasibility. It will also become increasingly imperative to adequately identify the conditions for paraffin precipitation and predict paraffin deposition rates to optimize the design and operation of these multi-phase production systems. Although several oil companies have paraffin deposition predictive capabilities for single-phase oil flow, these predictive capabilities are not suitable for the multiphase flow conditions encountered in most flowlines and wellbores. For deepwater applications in the Gulf of Mexico, it is likely that multiphase production streams consisting of crude oil, produced water and gas will be transported in a single multiphase pipeline to minimize capital cost and complexity at the mudline. Existing single-phase (crude oil) paraffin deposition predictive tools are clearly inadequate to accurately design these pipelines, because they do not account for the second and third phases, namely, produced water and gas. The objective of this program is to utilize the current test facilities at The University of Tulsa, as well as member company expertise, to accomplish the following: enhance our understanding of paraffin deposition in single and two-phase (gas-oil) flows; conduct focused experiments to better understand various aspects of deposition physics; and, utilize knowledge gained from experimental modeling studies to enhance the computer programs developed in the previous JIP for predicting paraffin deposition in single and two-phase flow environments. These refined computer models will then be tested against field data from member company pipelines.

  1. Vapor deposition of thin films

    DOE Patents [OSTI]

    Smith, David C. (Los Alamos, NM); Pattillo, Stevan G. (Los Alamos, NM); Laia, Jr., Joseph R. (Los Alamos, NM); Sattelberger, Alfred P. (Los Alamos, NM)

    1992-01-01T23:59:59.000Z

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  2. Soot Deposit Properties in Practical Flames

    SciTech Connect (OSTI)

    Preciado, Ignacio [University of Utah; Eddings, Eric G. [University of Utah; Sarofim, Adel F. [University of Utah; Dinwiddie, Ralph Barton [ORNL; Porter, Wallace D [ORNL; Lance, Michael J [ORNL

    2009-01-01T23:59:59.000Z

    Soot deposition from hydrocarbon flames was investigated in order to evaluate the evolution of the deposits during the transient process of heating an object that starts with a cold metal surface that is exposed to a flame. The study focused on the fire/metal surface interface and the critical issues associated with the specification of the thermal boundaries at this interface, which include the deposition of soot on the metal surface, the chemical and physical properties of the soot deposits and their subsequent effect on heat transfer to the metal surface. A laboratory-scale device (metallic plates attached to a water-cooled sampling probe) was designed for studying soot deposition in a laminar ethylene-air premixed flame. The metallic plates facilitate the evaluation of the deposition rates and deposit characteristics such as deposit thickness, bulk density, PAH content, deposit morphology, and thermal properties, under both water-cooled and uncooled conditions. Additionally, a non-intrusive Laser Flash Technique (in which the morphology of the deposit is not modified) was used to estimate experimental thermal conductivity values for soot deposits as a function of deposition temperature (water-cooled and uncooled experiments), location within the flame and chemical characteristics of the deposits. Important differences between water-cooled and uncooled surfaces were observed. Thermophoresis dominated the soot deposition process and enhanced higher deposition rates for the water-cooled experiments. Cooler surface temperatures resulted in the inclusion of increased amounts of condensable hydrocarbons in the soot deposit. The greater presence of condensable material promoted decreased deposit thicknesses, larger deposit densities, different deposit morphologies, and higher thermal conductivities.

  3. Precipitation scavenging, dry deposition, and resuspension. Volume 2: dry deposition and resuspension

    SciTech Connect (OSTI)

    Pruppacher, H.R.; Semanin, R.G.; Slinn, W.G.N.

    1983-01-01T23:59:59.000Z

    Papers are presented under the headings: dry deposition of gases, dry deposition of particles, wind erosion, plutonium deposition and resuspension, air-sea exchange, tropical and polar, global scale, and future studies.

  4. Growth of Carbon Support for Proton-Exchange-Membrane Fuel Cell by

    E-Print Network [OSTI]

    Growth of Carbon Support for Proton-Exchange-Membrane Fuel Cell by Pulsed-Laser Deposition (PLDGDL)(catalyst) (pulsed laser deposition PLD) (plasma plume) () #12;III Abstract key word: Fuel CellPulsed Laser. People begin to develop fuel cells for seeking alternative energy sources. Fuel cell use the chemical

  5. Vacuum vapor deposition gun assembly

    DOE Patents [OSTI]

    Zeren, Joseph D. (Boulder, CO)

    1985-01-01T23:59:59.000Z

    A vapor deposition gun assembly includes a hollow body having a cylindrical outer surface and an end plate for holding an adjustable heat sink, a hot hollow cathode gun, two magnets for steering the plasma from the gun into a crucible on the heat sink, and a shutter for selectively covering and uncovering the crucible.

  6. Composition and chemical bonding of pulsed laser deposited carbon nitride thin films

    E-Print Network [OSTI]

    Brune, Harald

    properties such as extreme hardness, infrared transparency, chemical inertness, and excellent tribological with existing lubricants.7 DLC and CNx films can be grown with different meth- ods such as sputter deposition.11 There are still several open questions regarding how the growth conditions influence the resulting

  7. A Study of Atmospheric Deposition of Air Toxics to the Waters of Puget Sound

    E-Print Network [OSTI]

    Aguirre, Danielle

    2009-06-09T23:59:59.000Z

    , Washington, it is vital to determine what the impacts of such growth have had on air and water quality and if greater needs in regulation are needed to curtail emissions. A bi-weekly deposition study of atmospheric particulate matter at seven sites around...

  8. Cobalt Ultrathin Film Catalyzed Ethanol Chemical Vapor Deposition of Single-Walled Carbon Nanotubes

    E-Print Network [OSTI]

    Hone, James

    Cobalt Ultrathin Film Catalyzed Ethanol Chemical Vapor Deposition of Single-Walled Carbon Nanotubes (SWNTs) using a cobalt ultrathin film (1 nm) as the catalyst and ethanol as carbon feedstock flow during the growth. The trace amount of self-contained water (0.2-5 wt %) in ethanol may act

  9. Transitions in morphology observed in nitrogenmethanehydrogen depositions of polycrystalline diamond films

    E-Print Network [OSTI]

    Ayres, Virginia

    % and 1% methane­hydrogen depositions of polycrystalline diamond films. Five results are reported. 1.1063/1.1362406 I. INTRODUCTION Controlled, textured growth of polycrystalline diamond films would be desirable of polycrystalline diamond films: 2% CH4 /H2 and 1% CH4 /H2 . Five results are reported and discussed. II

  10. Deposition of WNxCy thin films for diffusion barrier application using the dimethylhydrazido (2-

    E-Print Network [OSTI]

    Anderson, Timothy J.

    Deposition of WNxCy thin films for diffusion barrier application using the dimethylhydrazido (2 nitride carbide Diffusion barrier X-ray diffraction Auger electron spectroscopy Tungsten nitride carbide, composition, atomic bonding, and electrical resistivity, respectively. The lowest temperature at which growth

  11. In-situ spectroscopic ellipsometry study of copper selective-area atomic layer deposition on palladium

    SciTech Connect (OSTI)

    Jiang, Xiaoqiang; Wang, Han; Qi, Jie; Willis, Brian G., E-mail: bgwillis@engr.uconn.edu [Department of Chemical and Biomolecular Engineering University of Connecticut, Storrs, Connecticut 06269-3222 (United States)

    2014-07-01T23:59:59.000Z

    Selective area copper atomic layer deposition on palladium seed layers has been investigated with in-situ real-time spectroscopic ellipsometry to probe the adsorption/desorption and reaction characteristics of individual deposition cycles. The reactants are copper bis(2,2,6,6-tetramethyl-3,5-heptanedionate) vapor and hydrogen gas. Self-limiting atomic layer deposition was observed in the temperature range of 135–230?°C in a low pressure reactor. Under optimal conditions, growth occurs selectively on palladium and not on silicon dioxide or silicon nitride layers. Based on in-situ ellipsometry data and supporting experiments, a new mechanism for growth is proposed. In the proposed mechanism, precursor adsorption is reversible, and dissociatively adsorbed hydrogen are the stable surface intermediates between growth cycles. The mechanism is enabled by continuous diffusion of palladium from the seed layer into the deposited copper film and strong H* binding to palladium sites. Less intermixing can be obtained at low growth temperatures and short cycle times by minimizing Cu/Pd inter-diffusion.

  12. Decomposition of Ethanol and Dimethyl Ether During Chemical Vapour deposition Synthesis

    E-Print Network [OSTI]

    Maruyama, Shigeo

    1 Decomposition of Ethanol and Dimethyl Ether During Chemical Vapour deposition Synthesis of Single-phase thermal decomposition of ethanol and dimethyl ether (DME) at typical SWNT growth conditions using to the predicted decomposition mechanism. Signature peak intensities indicated concentrations of both ethanol

  13. Dendrite-Free Lithium Deposition with Self-Aligned Nanorod Structure

    SciTech Connect (OSTI)

    Zhang, Yaohui; Qian, Jiangfeng; Xu, Wu; Russell, Selena M.; Chen, Xilin; Nasybulin, Eduard; Bhattacharya, Priyanka; Engelhard, Mark H.; Mei, Donghai; Cao, Ruiguo; Ding, Fei; Cresce, Arthur V.; Xu, Kang; Zhang, Jiguang

    2014-12-10T23:59:59.000Z

    Suppressing lithium (Li) dendrite growth is one of the most critical challenges for the development of Li metal batteries. We recently proposed a novel self-healing electrostatic shield (SHES) mechanism which can fundamentally change the Li deposition behavior and lead to the growth of dendrite-free Li films. Here, we report for the first time that the as-deposited dendrite-free Li films grown with assistance of SHES additive are actually composed of highly-aligned and compacted Li nanorods with hemispherical tips. Both surface and cross sectional morphology evolution of the Li films during repeated Li deposition/stripping processes were systematically investigated. A new model has been established to explain the formation and evolution of the Li nanorods. A fundamental understanding on the internal structure and evolution of Li metal films may lead to new approaches to stabilize the long term cycling stability of Li metal anode.

  14. Sputter deposition of lithium silicate - lithium phosphate amorphous electrolytes

    SciTech Connect (OSTI)

    Dudney, N.J.; Bates, J.B.; Luck, C.F. (Oak Ridge National Lab., TN (USA)); Robertson, J.D. (Kentucky Univ., Lexington, KY (USA). Dept. of Chemistry)

    1991-01-01T23:59:59.000Z

    Thin films of an amorphous lithium-conducting electrolyte were deposited by rf magnetron sputtering of ceramic targets containing Li{sub 4}SiO{sub 4} and Li{sub 3}PO{sub 4}. The lithium content of the films was found to depend more strongly on the nature and composition of the targets than on many other sputtering parameters. For targets containing Li{sub 4}SiO{sub 4}, most of the lithium was found to segregate away from the sputtered area of the target. Codeposition using two sputter sources achieves a high lithium content in a controlled and reproducible film growth. 10 refs., 4 figs.

  15. Chemical vapor deposition of functionalized isobenzofuran polymers

    E-Print Network [OSTI]

    Olsson, Ylva Kristina

    2007-01-01T23:59:59.000Z

    This thesis develops a platform for deposition of polymer thin films that can be further tailored by chemical surface modification. First, we explore chemical vapor deposition of functionalized isobenzofuran films using ...

  16. Essays on Banking Crises and Deposit Insurance

    E-Print Network [OSTI]

    Wang, Wen-Yao

    2009-05-15T23:59:59.000Z

    and elaborately illustrated the role of market discipline under deposit insurance. Barajas and Steiner (2000) show the ability of the Colombian deposit insurance system to limit moral hazard when considering market discipline. Demirguc-Kunt and Huizinga (2004...

  17. Modeling deposit formation in diesel injector nozzle

    E-Print Network [OSTI]

    Sudhiesh Kumar, Chintoo

    2009-01-01T23:59:59.000Z

    Formation of deposit in the diesel injector nozzle affects the injection behavior and hinders performance. Under running condition, deposit precursors are washed away by the ensuing injection. However, during the cool down ...

  18. Formation mechanisms of combustion chamber deposits

    E-Print Network [OSTI]

    O'Brien, Christopher J. (Christopher John)

    2001-01-01T23:59:59.000Z

    Combustion chamber deposits are found in virtually all internal combustion engines after a few hundred hours of operation. Deposits form on cylinder, piston, and head surfaces that are in contact with fuel-air mixture ...

  19. Florida Growth Fund (Florida)

    Broader source: Energy.gov [DOE]

    The Florida Growth Fund can provide investments in technology and growth-related companies through co-investments with other institutional investors. The Fund awards preference to companies...

  20. Ion beam assisted deposition of thermal barrier coatings

    DOE Patents [OSTI]

    Youchison, Dennis L. (Albuquerque, NM); McDonald, Jimmie M. (Albuquerque, NM); Lutz, Thomas J. (Albuquerque, NM); Gallis, Michail A. (Albuquerque, NM)

    2010-11-23T23:59:59.000Z

    Methods and apparatus for depositing thermal barrier coatings on gas turbine blades and vanes using Electron Beam Physical Vapor Deposition (EBPVD) combined with Ion Beam Assisted Deposition (IBAD).

  1. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOE Patents [OSTI]

    Jankowski, A.F.; Makowiecki, D.M.; Rambach, G.D.; Randich, E.

    1998-05-19T23:59:59.000Z

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated. 8 figs.

  2. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOE Patents [OSTI]

    Jankowski, Alan F. (Livermore, CA); Makowiecki, Daniel M. (Livermore, CA); Rambach, Glenn D. (Livermore, CA); Randich, Erik (Endinboro, PA)

    1998-01-01T23:59:59.000Z

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

  3. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOE Patents [OSTI]

    Jankowski, Alan F. (Livermore, CA); Makowiecki, Daniel M. (Livermore, CA); Rambach, Glenn D. (Livermore, CA); Randich, Erik (Endinboro, PA)

    1999-01-01T23:59:59.000Z

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

  4. Asphalt deposition in miscible floods

    E-Print Network [OSTI]

    Hasan, Syed Mir Ahmed

    1964-01-01T23:59:59.000Z

    : Petroleum Engineering ASPHALT DEPOSITION IN MISCIBLE FLOODS A Thesis By SYED MIR AHMED HASAN Approved as to style and content by: (Chairman of Committee) ommittee Member) Committee Member) Head of Department), (Co 'ttee Member) January, f964... Subject: Petroleum Engineering TABLE OF CONTENTS ABS TRAC T. Page 2. INTRODUCTION. 3 DESCRIPTION OF EQUIPMENT AND MATERIALS. . . . . , . 6 4. EXPERIMENTAL PROCEDURE 5. INTERPRETATION AND DISCUSSION OF RESULTS. . . . . . 13 6. CONCLUSIONS. 7...

  5. Exhaust Gas Recirculation Cooler Fouling in Diesel Applications: Fundamental Studies Deposit Properties and Microstructure

    SciTech Connect (OSTI)

    Storey, John Morse [ORNL; Sluder, Scott [ORNL; Lance, Michael J [ORNL; Styles, Dan [Ford Motor Company; Simko, Steve [Ford Motor Company

    2013-01-01T23:59:59.000Z

    This paper reports on the results of experimental efforts aimed at improving the understanding of the mechanisms and conditions at play in the fouling of EGR coolers. An experimental apparatus was constructed to utilize simplified surrogate heat exchanger tubes in lieu of full-size heat exchangers. The use of these surrogate tubes allowed removal of the tubes after exposure to engine exhaust for study of the deposit layer and its properties. The exhaust used for fouling the surrogate tubes was produced using a modern medium-duty diesel engine fueled with both ultra-low sulfur diesel and biodiesel blends. At long exposure times, no significant difference in the fouling rate was observed between fuel types and HC levels. Surface coatings for the tubes were also evaluated to determine their impact on deposit growth. No surface treatment or coating produced a reduction in the fouling rate or any evidence of deposit removal. In addition, microstructural analysis of the fouling layers was performed using optical and electron microscopy in order to better understand the deposition mechanism. The experimental results are consistent with thermophoretic deposition for deposit formation, and van der Waals attraction between the deposit surface and exhaust-borne particulate.

  6. Effect of Electronic Excitation on Thin Film Growth

    SciTech Connect (OSTI)

    Elsayed-Ali, Hani E. [Old Dominion University

    2011-01-31T23:59:59.000Z

    The effect of nanosecond pulsed laser excitation on surface diffusion during growth of Ge on Si(100) at 250 degrees C was studied. In Situ reflection high-energy electron diffraction (RHEED) was used to measure the surface diffusion coefficient while ex situ atomic force microscopy (AFM) was used to probe the structure and morphology of the grown quantum dots. The results show that laser excitation of the substrate increases the surface diffusion during growth of Ge on Si(100), changes the growth morphology, improves crystalline structure of the grown quantum dots, and decreases their size distribution. A purely electronic mechanism of enhanced surface diffusion of the deposited Ge is proposed. Ge quantum dots were grown on Si(100)-(2x1) by pulsed laser deposition at various substrate temperatures using a femtosecond Ti:sapphire laser. In-situ reflection high-energy electron diffraction and ex-situ atomic force microscopy were used to analyze the fim structure and morphology. The morphology of germanium islands on silicon was studied at differect coverages. The results show that femtosecond pulsed laser depositon reduces the minimum temperature for epitaxial growth of Ge quantum dots to ~280 degrees C, which is 120 degrees C lower then previously observed in nanosecond pulsed laser deposition and more than 200 degrees C lower than that reported for molecular beam epitaxy and chemical vapor deposition.

  7. Deposition

    National Nuclear Security Administration (NNSA)

    our 19 explanation of the draft rule. 20 I have two things that I am supposed to take 21 care of while I am up here at the podium. The first is 22 Capital Reporting Company...

  8. Deposition

    National Nuclear Security Administration (NNSA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA Approved: 5-13-14Russianvolunteer |At.<ENDMENT/MODIFICATIONAsReporting Company

  9. Growth and structure of sputtered gallium nitride films

    SciTech Connect (OSTI)

    Yadav, Brajesh S.; Major, S. S.; Srinivasa, R. S. [Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076 (India); Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076 (India)

    2007-10-01T23:59:59.000Z

    GaN films have been deposited by radio frequency sputtering of a GaAs target with pure nitrogen. The growth, composition, and structure of the films deposited on quartz substrates have been studied by x-ray diffraction, transmission electron microscopy, and Raman spectroscopy. Films deposited below 300 deg. C are amorphous and As rich. Above 300 deg. C, polycrystalline, hexagonal GaN is formed, along with As rich amorphous phase, which reduces with increasing substrate temperature. At a substrate temperature of 700 deg. C, GaN films, practically free of amorphous phase, and As (<0.5 at. %) are formed. The preferred orientation depends strongly on the substrate temperature and is controlled by surface diffusion of adatoms during growth stage. Below 500 deg. C, the surface diffusion between planes dominates and results in the (1011) preferred orientation. Above 500 deg. C, the surface diffusion between grains takes over and results in (0002) preferred orientation.

  10. Development of Lithium Deposition Techniques for TFTR

    SciTech Connect (OSTI)

    Gorman, J.; Johnson, D.; Kugel, H.W.; Labik, G.; Lemunyan, G.; et al

    1997-10-01T23:59:59.000Z

    The ability to increase the quantity of lithium deposition into TFTR beyond that of the Pellet Injector while minimizing perturbations to the plasma provides interesting experimental and operational options. Two additional lithium deposition tools were developed for possible application during the 1996 Experimental Schedule: a solid lithium target probe for real-time deposition, and a lithium effusion oven for deposition between discharges. The lithium effusion oven was operated in TFTR to deposit lithium on the Inner Limiter in the absence of plasma. This resulted in the third highest power TFTR discharge.

  11. Development of lithium deposition techniques for TFTR

    SciTech Connect (OSTI)

    Kugel, H.W.; Gorman, J.; Johnson, D.; Labik, G.; Lemunyan, G.; Mansfield, D.; Timberlake, J.; Vocaturo, M.

    1997-10-01T23:59:59.000Z

    The ability to increase the quantity of lithium deposition into TFTR beyond that of the Pellet Injector while minimizing perturbations to the plasma provides interesting experimental and operational options. Two additional lithium deposition tools were developed for possible application during the 1996 Experimental Schedule: a solid lithium target probe for real-time deposition, and a lithium effusion oven for deposition between discharges. The lithium effusion oven was operated in TFTR to deposit lithium on the Inner Limiter in the absence of plasma. This resulted in the third highest power TFTR discharge.

  12. Chemical vapor deposition of epitaxial silicon

    DOE Patents [OSTI]

    Berkman, Samuel (Florham Park, NJ)

    1984-01-01T23:59:59.000Z

    A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

  13. Growth of a single freestanding multiwall carbon nanotube on each nanonickel dot

    E-Print Network [OSTI]

    Reed, Mark

    that the structures are indeed hollow nanotubes. The diameter and height depend on the nickel dot size and growth time displays FEDs . Attempts to manipulate nano- tubes for these applications have been made by postgrowth deposition CVD on mesopo- rous silica with imbedded iron particles.9 The growth of large arrays of well

  14. Radiative Impacts on the Growth of Drops within Simulated Marine Stratocumulus. Part I: Maximum Solar Heating

    E-Print Network [OSTI]

    Harrington, Jerry Y.

    Radiative Impacts on the Growth of Drops within Simulated Marine Stratocumulus. Part I: Maximum Solar Heating CHRISTOPHER M. HARTMAN AND JERRY Y. HARRINGTON Department of Meteorology, The Pennsylvania November 2004) ABSTRACT The effects of solar heating and infrared cooling on the vapor depositional growth

  15. MOCVD growth mechanisms of ZnO nanorods G Perillat-Merceroz1, 2

    E-Print Network [OSTI]

    Boyer, Edmond

    cells, gas sensors or LEDs. Their high crystalline quality and purity, due to growth without a catalyst, are adequate for optoelectronic applications. MOCVD growth [2] enables fast, large area deposition details ZnO nanorods were grown using catalyst-free MOCVD in a horizontal hot-wall Epigress reactor. The c

  16. Surface Science Letters Self-assembled growth of ordered Ge nanoclusters on

    E-Print Network [OSTI]

    Gao, Hongjun

    Surface Science Letters Self-assembled growth of ordered Ge nanoclusters on the Si(1 1 1)-(7 Â 7-assembled growth of submonolayer Ge on the Si(1 1 1)-(7 Â 7) surface grown by solid phase epitaxy has been studied using scanning tunneling microscopy. Ordered Ge nanoclusters on the surface are formed by the deposition

  17. The role of size-dependent dry deposition of sulfate aerosol in a three-dimensional Eulerian air quality model

    SciTech Connect (OSTI)

    Binkowski, F.S. [NOAA, Research Triangle Park, NC (United States); Shankar, U. [MCNC, Research Triangle Park, NC (United States)

    1994-12-31T23:59:59.000Z

    The Regional Particulate Model, a three-dimensional Eulerian air quality model, was developed to investigate aerosol particle issues of important to the US EPA and to meet the demands of the Clean Air Act amendments of 1990. In addition to aerosol dynamics such as growth and coagulation, the model includes photochemistry, transport, and deposition. A new formulation of dry deposition as a function of the aerosol size distribution has been incorporated into the model. This formulation allows for the representation of dry deposition of total particle number and total particle mass by deposition velocities specifically formulated for these two quantities as a function of particle size. Results for the dry deposition of sulfate mass from the new model will be compared with those from the Tagged Species Engineering Model for a variety of local conditions. The behavior of the aerosol size distribution responding to the new formulation will also be discussed.

  18. Research on fundamental aspects of inorganic vapor and particle deposition in coal-fired systems

    SciTech Connect (OSTI)

    Rosner, D.E.

    1992-03-01T23:59:59.000Z

    In September 1990 DOE-PETC initiated at the Yale HTCRE Laboratory a systematic three-year research program directed toward providing engineers with the fundamentally-based design/optimization tools'' foreconomically predicting the dynamics of net deposit growth, and thermophysical properties of the resulting microparticulate deposits in coal-fired systems. The goal of our research in the area of mineral mattertransport is to advance the capability of making reliable engineering predictions of the dynamics of net deposit growth for surfaces exposed to the particle-laden products of coal combustion. To accomplish thisfor a wide variety of combustor types, coal types, and operating conditions, this capability must be based on a quantitative understanding of each of the important mechanisms of mineral matter transport, as well as the nature of the interactions between these substances and the prevailing fireside'' surface of deposits. This level of understanding and predictive capability could be translated into very significant cost reductions for coal-fired equipment design, development and operation. It is also expected that this research activity will not only directly benefit the ash deposition R D community -- but also generically closely related technologies of importance to DOE (e.g. hot-gas clean-up, particulate solids handling,...).

  19. Magnetic properties of Ni-Fe nanowire arrays: effect of template material and deposition conditions

    SciTech Connect (OSTI)

    Singleton, John [Los Alamos National Laboratory; Aravamudhan, Shyan [U OF SOUTH FL; Goddard, Paul A [U OF OXFORD; Bhansali, Shekhar [U OF SOUTH FL

    2008-01-01T23:59:59.000Z

    The objective of this work is to study the magnetic properties of arrays of Ni-Fe nanowires electrodeposited in different template materials such as porous silicon, polycarbonate and alumina. Magnetic properties were studied as a function of template material, applied magnetic field (parallel and perpendicular) during deposition, wire length, as well as magnetic field orientation during measurement. The results show that application of magnetic field during deposition strongly influences the c-axis preferred orientation growth of Ni-Fe nanowires. The samples with magnetic field perpendicular to template plane during deposition exhibits strong perpendicular anisotropy with greatly enhanced coercivity and squareness ratio, particularly in Ni-Fe nanowires deposited in polycarbonate templates. In case of polycarbonate template, as magnetic field during deposition increases, both coercivity and squareness ratio also increase. The wire length dependence was also measured for polycarbonate templates. As wire length increases, coercivity and squarness ratio decrease, but saturation field increases. Such magnetic behavior (dependence on template material, magnetic field, wire length) can be qualitatively explained by preferential growth phenomena, dipolar interactions among nanowires, and perpendicular shape anisotropy in individual nanowires.

  20. Metal deposition using seed layers

    DOE Patents [OSTI]

    Feng, Hsein-Ping; Chen, Gang; Bo, Yu; Ren, Zhifeng; Chen, Shuo; Poudel, Bed

    2013-11-12T23:59:59.000Z

    Methods of forming a conductive metal layers on substrates are disclosed which employ a seed layer to enhance bonding, especially to smooth, low-roughness or hydrophobic substrates. In one aspect of the invention, the seed layer can be formed by applying nanoparticles onto a surface of the substrate; and the metallization is achieved by electroplating an electrically conducting metal onto the seed layer, whereby the nanoparticles serve as nucleation sites for metal deposition. In another approach, the seed layer can be formed by a self-assembling linker material, such as a sulfur-containing silane material.

  1. Growth of multi-component alloy films with controlled graded chemical composition on sub-nanometer scale

    DOE Patents [OSTI]

    Bajt, Sasa; Vernon, Stephen P.

    2005-03-15T23:59:59.000Z

    The chemical composition of thin films is modulated during their growth. A computer code has been developed to design specific processes for producing a desired chemical composition for various deposition geometries. Good agreement between theoretical and experimental results was achieved.

  2. Two-stage epitaxial growth of vertically-aligned SnO2 nano-rods on(001) ceria

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Solovyov, Vyacheslav F. [Brookhaven National Lab. (BNL), Upton, NY (United States); Wu, Li-jun [Brookhaven National Lab. (BNL), Upton, NY (United States); Rupich, Martin W. [American Superconductor, Devens, MA (United States); Sathyamurthy, Srivatsan [American Superconductor, Devens, MA (United States); Li, Xiaoping [American Superconductor, Devens, MA (United States); Li, Qiang [Brookhaven National Lab. (BNL), Upton, NY (United States)

    2014-12-01T23:59:59.000Z

    Growth of high-aspect ratio oriented tin oxide, SnO2, nano-rods is complicated by a limited choice of matching substrates. We show that a (001) cerium oxide, CeO2, surface uniquely enables epitaxial growth of tin-oxide nano-rods via a two-stage process. First, (100) oriented nano-wires coat the ceria surface by lateral growth, forming a uniaxially-textured SnO2 deposit. Second, vertical SnO2nano-rods nucleate on the deposit by homoepitaxy. We demonstrate growth of vertically oriented 1-2 ?m long nano-rods with an average diameter of ?20 nm.

  3. Control Mechanisms for the Growth of Isolated Vertically Aligned Carbon Nanofibers

    SciTech Connect (OSTI)

    Merkulov, Vladimir I [ORNL; Hensley, Dale K [ORNL; Melechko, Anatoli Vasilievich [ORNL; Guillorn, M. A. [Cornell University; Lowndes, Douglas H [ORNL; Simpson, Michael L [ORNL

    2002-01-01T23:59:59.000Z

    Isolated vertically aligned carbon nanofibers (VACNFs) have been grown using dc plasma-enhanced chemical vapor deposition, and the effects of the growth conditions on VACNF morphology and composition have been determined in substantial detail. The dependence of the growth rate, tip and base diameters, and chemical composition of isolated VACNFs on the growth parameters is described, including the effects of plasma power and gas mixture. Phenomenological models explaining the observed growth behavior are presented. The results indicate the importance of plasma control for the deterministic growth of isolated VACNFs, which are promising elements for the fabrication of practical nanoscale devices.

  4. CO-CATALYTIC ABSORPTION LAYERS FOR CONTROLLED LASER-INDUCED CHEMICAL VAPOR DEPOSITION OF CARBON NANOTUBES

    E-Print Network [OSTI]

    Michaelis, F.B.; Weatherup, R.S.; Bayer, B.C.; Bock, M.C.D; Sugime, H.; Caneva, S.; Robertson, J.; Baumberg, J.J.; Hofmann, S.

    2014-02-24T23:59:59.000Z

    ,38 by atomic layer deposition (ALD) using a Cambridge Nanotech Savannah system and a 200°C process with tri[methyl]aluminium and water both carried in a N2(20 sccm) flow for 200 cycles 39,40. Ta layers are sputter deposited (100W, 35sccm Ar, 3.5×10-3 mbar... it is optically compensated). Thermal CVD. CNT growth is also carried out in a custom-built cold-wall CVD chamber with a resistive graphite heater element. Samples are heated to ~670°C and annealed for 5 min in a non-reducing (~10-3 mbar vacuum) or reducing...

  5. In situ synchrotron based x-ray techniques as monitoring tools for atomic layer deposition

    SciTech Connect (OSTI)

    Devloo-Casier, Kilian, E-mail: Kilian.DevlooCasier@Ugent.be; Detavernier, Christophe; Dendooven, Jolien [Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000 Ghent (Belgium); Ludwig, Karl F. [Physics Department, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215 (United States)

    2014-01-15T23:59:59.000Z

    Atomic layer deposition (ALD) is a thin film deposition technique that has been studied with a variety of in situ techniques. By exploiting the high photon flux and energy tunability of synchrotron based x-rays, a variety of new in situ techniques become available. X-ray reflectivity, grazing incidence small angle x-ray scattering, x-ray diffraction, x-ray fluorescence, x-ray absorption spectroscopy, and x-ray photoelectron spectroscopy are reviewed as possible in situ techniques during ALD. All these techniques are especially sensitive to changes on the (sub-)nanometer scale, allowing a unique insight into different aspects of the ALD growth mechanisms.

  6. Research on fundamental aspects of inorganic vapor and particle deposition in coal-fired systems

    SciTech Connect (OSTI)

    Rosner, D.E.

    1992-09-01T23:59:59.000Z

    In September 1990 DOE-PETC initiated at the Yale HTCRE Laboratory a systematic three-year research program directed toward providing engineers with the fundamentally-based design/optimization 'tools' for economically predicting the dynamics of net deposit growth*, and thermophysical properties of the resulting microparticulate deposits in coal-fired systems. In light of the theoretical 'program' based on the notion of self-regulation'' set forth in Rosner and Nagarajan (1987), this Task includes investigation of the effects of particle material properties and possible liquid phases on the capture properties of particulate deposits. For this purpose we exploit dynamical 'many-body' computer simulation techniques. This approach will provide the required parametric dependencies (on such quantities as incident kinetic energy and angle, mechanical and thermophysical properties of the particles,[hor ellipsis]) of a dimensionless ensemble-averaged particle capture fraction, relegating the role of direct laboratory experiment to verifying (or rejecting) some crucial features/consequences of the simulation route followed. Our ultimate goal is recommend 'sticking' and 'erosion' laws of mechanistic origin. The availability of such laws could dramatically increase the reliability of predicted deposition rates of inertially delivered particles, in the simultaneous presence of a condensed liquid phase within the growing particulate, deposit. Equally important, one could also rationally select conditions to avoid. troublesome deposition subject to other operational requirements.

  7. Sandia National Laboratories: atomic layer deposition

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    layer deposition Combining 'Tinkertoy' Materials with Solar Cells for Increased Photovoltaic Efficiency On December 4, 2014, in Energy, Materials Science, News, News & Events,...

  8. Improved Formulations for Air-Surface Exchanges Related to National Security Needs: Dry Deposition Models

    SciTech Connect (OSTI)

    Droppo, James G.

    2006-07-01T23:59:59.000Z

    The Department of Homeland Security and others rely on results from atmospheric dispersion models for threat evaluation, event management, and post-event analyses. The ability to simulate dry deposition rates is a crucial part of our emergency preparedness capabilities. Deposited materials pose potential hazards from radioactive shine, inhalation, and ingestion pathways. A reliable characterization of these potential exposures is critical for management and mitigation of these hazards. A review of the current status of dry deposition formulations used in these atmospheric dispersion models was conducted. The formulations for dry deposition of particulate materials from am event such as a radiological attack involving a Radiological Detonation Device (RDD) is considered. The results of this effort are applicable to current emergency preparedness capabilities such as are deployed in the Interagency Modeling and Atmospheric Assessment Center (IMAAC), other similar national/regional emergency response systems, and standalone emergency response models. The review concludes that dry deposition formulations need to consider the full range of particle sizes including: 1) the accumulation mode range (0.1 to 1 micron diameter) and its minimum in deposition velocity, 2) smaller particles (less than .01 micron diameter) deposited mainly by molecular diffusion, 3) 10 to 50 micron diameter particles deposited mainly by impaction and gravitational settling, and 4) larger particles (greater than 100 micron diameter) deposited mainly by gravitational settling. The effects of the local turbulence intensity, particle characteristics, and surface element properties must also be addressed in the formulations. Specific areas for improvements in the dry deposition formulations are 1) capability of simulating near-field dry deposition patterns, 2) capability of addressing the full range of potential particle properties, 3) incorporation of particle surface retention/rebound processes, and. 4) development of dry deposition formulations applicable to urban areas. Also to improve dry deposition modeling capabilities, atmospheric dispersion models in which the dry deposition formulations are imbedded need better source-term plume initialization and improved in-plume treatment of particle growth processes. Dry deposition formulations used in current models are largely inapplicable to the complex urban environment. An improved capability is urgently needed to provide surface-specific information to assess local exposure hazard levels in both urban and non-urban areas on roads, buildings, crops, rivers, etc. A model improvement plan is developed with a near-term and far-term component. Despite some conceptual limitations, the current formulations for particle deposition based on a resistance approach have proven to provide reasonable dry deposition simulations. For many models with inadequate dry deposition formulations, adding or improving a resistance approach will be the desirable near-term update. Resistance models however are inapplicable aerodynamically very rough surfaces such as urban areas. In the longer term an improved parameterization of dry deposition needs to be developed that will be applicable to all surfaces, and in particular urban surfaces.

  9. Optical Properties of Zn(O,S) Thin Films Deposited by RF Sputtering, Atomic Layer Deposition, and Chemical Bath Deposition: Preprint

    SciTech Connect (OSTI)

    Li, J.; Glynn, S.; Christensen, S.; Mann, J.; To, B.; Ramanathan, K.; Noufi, R.; Furtak, T. E.; Levi, D.

    2012-06-01T23:59:59.000Z

    Zn(O,S) thin films 27 - 100 nm thick were deposited on glass or Cu(InxGa1-x)Se2/Molybdenum/glass with RF sputtering, atomic layer deposition, and chemical bath deposition.

  10. Large Area Vacuum Deposited Coatings

    SciTech Connect (OSTI)

    Martin, Peter M.

    2003-04-30T23:59:59.000Z

    It's easy to make the myriad of types of large area and decorative coatings for granted. We probably don't even think about most of them; the low-e and heat mirror coatings on our windows and car windows, the mirrors in displays, antireflection coatings on windows and displays, protective coatings on aircraft windows, heater coatings on windshields and aircraft windows, solar reflectors, thin film solar cells, telescope mirrors, Hubble mirrors, transparent conductive coatings, and the list goes on. All these products require large deposition systems and chambers. Also, don't forget that large batches of small substrates or parts are coated in large chambers. In order to be cost effective hundreds of ophthalmic lenses, automobile reflectors, display screens, lamp reflectors, cell phone windows, laser reflectors, DWDM filters, are coated in batches.

  11. Enhanced photoresponse of conformal TiO{sub 2}/Ag nanorod array-based Schottky photodiodes fabricated via successive glancing angle and atomic layer deposition

    SciTech Connect (OSTI)

    Haider, Ali; Biyikli, Necmi, E-mail: biyikli@unam.bilkent.edu.tr [National Nanotechnology Research Center (UNAM), Bilkent University, Bilkent, Ankara 06800, Turkey and Institute of Materials Science and Nanotechnology, Bilkent University, Bilkent, Ankara 06800 (Turkey); Cansizoglu, Hilal; Cansizoglu, Mehmet Fatih; Karabacak, Tansel [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, Arkansas 72204 (United States); Okyay, Ali Kemal [National Nanotechnology Research Center (UNAM), Bilkent University, Bilkent, Ankara 06800 (Turkey); Institute of Materials Science and Nanotechnology, Bilkent University, Bilkent, Ankara 06800 (Turkey); Department of Electrical and Electronics Engineering, Bilkent University, Bilkent, Ankara 06800 (Turkey)

    2015-01-01T23:59:59.000Z

    In this study, the authors demonstrate a proof of concept nanostructured photodiode fabrication method via successive glancing angle deposition (GLAD) and atomic layer deposition (ALD). The fabricated metal-semiconductor nanorod (NR) arrays offer enhanced photoresponse compared to conventional planar thin-film counterparts. Silver (Ag) metallic NR arrays were deposited on Ag-film/Si templates by utilizing GLAD. Subsequently, titanium dioxide (TiO{sub 2}) was deposited conformally on Ag NRs via ALD. Scanning electron microscopy studies confirmed the successful formation of vertically aligned Ag NRs deposited via GLAD and conformal deposition of TiO{sub 2} on Ag NRs via ALD. Following the growth of TiO{sub 2} on Ag NRs, aluminum metallic top contacts were formed to complete the fabrication of NR-based Schottky photodiodes. Nanostructured devices exhibited a photo response enhancement factor of 1.49?×?10{sup 2} under a reverse bias of 3 V.

  12. A Minimal Model for Large-scale Epitaxial Growth Kinetics of Graphene

    E-Print Network [OSTI]

    Jiang, Huijun

    2015-01-01T23:59:59.000Z

    Epitaxial growth via chemical vapor deposition is considered to be the most promising way towards synthesizing large area graphene with high quality. However, it remains a big theoretical challenge to reveal growth kinetics with atomically energetic and large-scale spatial information included. Here, we propose a minimal kinetic Monte Carlo model to address such an issue on an active catalyst surface with graphene/substrate lattice mismatch, which facilitates us to perform large scale simulations of the growth kinetics over two dimensional surface with growth fronts of complex shapes. A geometry-determined large-scale growth mechanism is revealed, where the rate-dominating event is found to be $C_{1}$-attachment for concave growth front segments and $C_{5}$-attachment for others. This growth mechanism leads to an interesting time-resolved growth behavior which is well consistent with that observed in a recent scanning tunneling microscopy experiment.

  13. Chemical vapor deposition of mullite coatings

    DOE Patents [OSTI]

    Sarin, Vinod (Lexington, MA); Mulpuri, Rao (Boston, MA)

    1998-01-01T23:59:59.000Z

    This invention is directed to the creation of crystalline mullite coatings having uniform microstructure by chemical vapor deposition (CVD). The process comprises the steps of establishing a flow of reactants which will yield mullite in a CVD reactor, and depositing a crystalline coating from the reactant flow. The process will yield crystalline coatings which are dense and of uniform thickness.

  14. Atomic layer deposition of molybdenum oxide using bis(tert-butylimido)bis(dimethylamido) molybdenum

    SciTech Connect (OSTI)

    Bertuch, Adam, E-mail: abertuch@ultratech.com; Sundaram, Ganesh [Ultratech/Cambridge NanoTech, 130 Turner Street, Waltham, Massachusetts 02453 (United States); Saly, Mark; Moser, Daniel; Kanjolia, Ravi [SAFC Hitech, 1429 Hilldale Avenue, Haverhill, Massachusetts 01832 (United States)

    2014-01-15T23:59:59.000Z

    Molybdenum trioxide films have been deposited using thermal atomic layer deposition techniques with bis(tert-butylimido)bis(dimethylamido)molybdenum. Films were deposited at temperatures from 100 to 300?°C using ozone as the oxidant for the process. The Mo precursor was evaluated for thermal stability and volatility using thermogravimetric analysis and static vapor pressure measurements. Film properties were evaluated with ellipsometry, x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and secondary electron microscopy. The growth rate per cycle was determined to extend from 0.3 to 2.4?Å/cycle with <4% nonuniformity (1-sigma) with-in-wafer across a 150?mm wafer for the investigated temperature range.

  15. Structure in multilayer films of zinc sulfide and copper sulfide via atomic layer deposition

    SciTech Connect (OSTI)

    Short, Andrew; Jewell, Leila; Bielecki, Anthony; Keiber, Trevor; Bridges, Frank; Carter, Sue; Alers, Glenn, E-mail: galers@ucsc.edu [Department of Physics, University of California at Santa Cruz, 1156 High Street, Santa Cruz, California 95064 (United States)

    2014-01-15T23:59:59.000Z

    Multilayer film stacks of ZnS and Cu{sub x}S (x???2) were made via atomic layer deposition. The precursors were bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc, bis(2,2,6,6-tetramethyl-3,5-heptanedionato)copper, and H{sub 2}S generated in situ for sulfur. Samples were deposited at 200?°C, in layers ranging from approximately 2 to 20 nm thick, based on binary growth rates. The properties of the film stacks were studied with atomic force microscopy, ultraviolet–visible spectroscopy, and extended x-ray absorption fine structure. The results demonstrate that the structure of films with the thinnest layers is dominated by Cu{sub x}S, whereas in the thicker films, the structure is determined by whichever material is first deposited. This can be attributed to the crystal structure mismatch of ZnS and Cu{sub x}S.

  16. Combinatorial pulsed laser deposition of doped yttrium iron garnet films on yttrium aluminium garnet

    SciTech Connect (OSTI)

    Sposito, A., E-mail: as11g10@orc.soton.ac.uk; Eason, R. W. [Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ (United Kingdom); Gregory, S. A.; Groot, P. A. J. de [Physics and Astronomy, University of Southampton, Southampton SO17 1BJ (United Kingdom)

    2014-02-07T23:59:59.000Z

    We investigate the crystalline growth of yttrium iron garnet (YIG) films doped with bismuth (Bi) and cerium (Ce) by combinatorial pulsed laser deposition, co-ablating a YIG target and either a Bi{sub 2}O{sub 3} or a CeO{sub 2} target, for applications in microwave and optical communications. Substrate temperature is critical for crystalline growth of YIG with simultaneous inclusion of Bi in the garnet lattice, whereas Ce is not incorporated in the garnet structure, but forms a separate CeO{sub 2} phase.

  17. Laser induced thermophoresis and particulate deposition efficiency

    SciTech Connect (OSTI)

    Cipolla, J.; Morse, T.F.; Wang, C.Y.

    1983-07-01T23:59:59.000Z

    The interaction of laser radiation and an absorbing aerosol in a tube flow has been considered. The aerosol is produced by external heating of reactants as in the MCVD (Modified Chemical Vapor Deposition) process to produce submicron size particles in the manufacture of optical fiber preforms. These are subsequently deposited by thermophoretic forces on the inner wall of the tube as they are convected by a Poiseuille velocity profile. Axial laser radiation in the tube interacts with the absorbing particles, and the laser heating of the gas induces additional thermophoretic forces that markedly increase the efficiency of particulate deposition. A particle concentration dependent absorption coefficient that appears in the energy equation couples the energy equation to the equation of particle conservation, so that a non-linear set of coupled partial integrodifferential equations must be solved. Numerical solutions for aerosol particle trajectories, and thus deposition efficiencies, have been obtained. It is shown that laser enhanced thermophoresis markedly improves the deposition efficiency.

  18. The aging of tungsten filaments and its effect on wire surface kinetics in hot-wire chemical vapor deposition

    E-Print Network [OSTI]

    Atwater, Harry

    desorption kinetics. In particular, the Si signal exhibits a high temperature activation energy consistent vapor deposition growth have been measured by quadrupole mass spectrometry. New wires produce Si with previous measurements; the activation energy for the SiH3 signal suggests its formation is catalyzed. Aged

  19. Surface spectroscopic studies of the deposition of TiN thin films from tetrakis-(dimethylamido)-titanium and ammonia

    E-Print Network [OSTI]

    Goodman, Wayne

    Surface spectroscopic studies of the deposition of TiN thin films from tetrakis-(dimethylamido)-titanium 1995 The adsorption and pyrolysis of tetrakis- dimethylamido -titanium TDMAT , Ti NMe2 4, on several , the growth of low-carbon-content 8 at. % titanium nitride films proceeds readily, via surface mediated

  20. Dendrite-Free Lithium Deposition via Self-Healing Electrostatic Shield Mechanism

    SciTech Connect (OSTI)

    Ding, Fei; Xu, Wu; Graff, Gordon L.; Zhang, Jian; Sushko, Maria L.; Chen, Xilin; Shao, Yuyan; Engelhard, Mark H.; Nie, Zimin; Xiao, Jie; Liu, Xingjiang; Sushko, P. V.; Liu, Jun; Zhang, Jiguang

    2013-02-28T23:59:59.000Z

    Lithium metal batteries are called the “holy grail” of energy storage systems. However, lithium dendrite growth in these batteries has prevented their practical applications in the last 40 years. Here we show a novel mechanism which can fundamentally change the dendritic morphology of lithium deposition. A low concentration of the second cations (including ions of cesium, rubidium, potassium, and strontium) exhibits an effective reduction potential lower than the standard reduction potential of lithium ions when the chemical activities of these second cations are much lower than that of lithium ions. During lithium deposition, these second cations will form a self-healing electrostatic shield around the initial tip of lithium whenever it is formed. This shield will repel the incoming lithium ions and force them to deposit in the smoother region of the anode so a dendrite-free film is obtained. This mechanism is effective on dendrite prevention in both lithium metal and lithium ion batteries. They may also prevent dendrite growth in other metal batteries and have transformational impact on the smooth deposition in general electrodeposition processes.

  1. Epitaxial Growth and Characterization of Silicon Carbide Films

    SciTech Connect (OSTI)

    Dhanaraj,G.; Dudley, M.; Chen, Y.; Ragothamachar, B.; Wu, B.; Zhang, H.

    2006-01-01T23:59:59.000Z

    Silicon carbide (SiC) epitaxial layers have been grown in a chemical vapor deposition (CVD) system designed and fabricated in our laboratory. Silicon tetrachloride-propane as well as silane-propane were used as precursor gases. The hot zone was designed based on simulation by using numerical modeling. Growth rates up to 200 {mu}m could be achieved. A new growth-assisted hydrogen etching was developed to show the distribution of the micropipes present in the substrate. Higher growth rate was observed on off-axis (0 0 0 1) 4 H SiC compared to the on-axis (0 0 0 1) wafer and growth mechanism was explained.

  2. Growth mechanisms, polytypism, and real structure of kaolinite microcrystals

    SciTech Connect (OSTI)

    Samotoin, N. D., E-mail: samnik@igem.ru [Russian Academy of Sciences, Institute of Geology of Ore Deposits, Petrography, Mineralogy, and Geochemistry (Russian Federation)

    2008-09-15T23:59:59.000Z

    The mechanisms of growth of kaolinite microcrystals (0.1-5.0 {mu}m in size) at deposits related to the cluvial weathering crust, as well as to the low-temperature and medium-temperature hydrothermal processes of transformations of minerals in different rocks in Russia, Kazakhstan, Ukraine, Czechia, Vietnam, India, Cuba, and Madagascar, are investigated using transmission electron microscopy and vacuum decoration with gold. It is established that kaolinite microcrystals grow according to two mechanisms: the mechanism of periodic formation of two-dimensional nuclei and the mechanism of spiral growth. The spiral growth of kaolinite microcrystals is dominant and occurs on steps of screw dislocations that differ in sign and magnitude of the Burgers vector along the c axis. The layered growth of kaolinite originates from a widespread source in the form of a step between polar (+ and -) dislocations, i.e., a growth analogue of the Frank-Read dislocation source. The density of growth screw dislocations varies over a wide range and can be as high as {approx}10{sup 9} cm{sup -2}. Layered stepped kaolinite growth pyramids for all mechanisms of growth on the (001) face of kaolinite exhibit the main features of the triclinic 1Tc and real structures of this mineral.

  3. Growth of tungsten oxide on carbon nanowalls templates

    SciTech Connect (OSTI)

    Wang, Hua, E-mail: wanghua@dlou.edu.cn [Faculty of Chemical, Environmental and Biological Science and Technology, Dalian University of Technology, Dalian 116024 (China); College of Fisheries and Life Science, Dalian Ocean University, Dalian 116023 (China); Su, Yan [Faculty of Chemical, Environmental and Biological Science and Technology, Dalian University of Technology, Dalian 116024 (China); Chen, Shuo, E-mail: shuochen@dlut.edu.cn [Faculty of Chemical, Environmental and Biological Science and Technology, Dalian University of Technology, Dalian 116024 (China); Quan, Xie [Faculty of Chemical, Environmental and Biological Science and Technology, Dalian University of Technology, Dalian 116024 (China)

    2013-03-15T23:59:59.000Z

    Highlights: ? Tungsten oxide deposited on carbon nanowalls by hot filament chemical vapor deposition technique. ? This composite has two-dimensional uniform morphology with a crystalline structure of monoclinic tungsten trioxide. ? Surface photoelectric voltage measurements show that this product has photoresponse properties. - Abstract: In the present work we present a simple approach for coupling tungsten oxide with carbon nanowalls. The two-dimensional carbon nanowalls with open boundaries were grown using plasma enhanced hot filament chemical vapor deposition, and the subsequent tungsten oxide growth was performed in the same equipment by direct heating of a tungsten filament. The tungsten oxide coating is found to have uniform morphology with a crystalline structure of monoclinic tungsten trioxide. Surface photoelectric voltage measurements show that this product has photoresponse properties. The method of synthesis described here provides an operable route to the production of two-dimensional tungsten oxide nanocomposites.

  4. Sorghum Growth and Development

    E-Print Network [OSTI]

    Gerik, Tom; Bean, Brent W.; Vanderlip, Richard

    2003-08-07T23:59:59.000Z

    Sorghum is well adapted to Texas, and its ability to yield consistently makes it popular with growers. This publication discusses sorghum plant biology and growth....

  5. Strategic Growth Initiative (Michigan)

    Broader source: Energy.gov [DOE]

    A joint venture between Michigan Department of Agriculture and Rural Development (MDARD) and the Michigan Economic Development Corporation (MEDC), the Strategic Growth Initiative Grant Program was...

  6. Growth and Characterization of Epitaxial Oxide Thin Films

    E-Print Network [OSTI]

    Garg, Ashish

    out during past three years has been published as follows: 1. A. Garg, J. A. Leake, and Z. H. Barber, Epitaxial Growth of WO3 Films on SrTiO3 and R- Sapphire, J. Phys.: D, Appl. Phys., 33 (9), 1048 (2000) 2. A. Garg, S. Dunn, and Z. H. Barber, Growth... of these films by 3-D Stranski-Krastanov mode. However, these films did not exhibit any ferroelectric activity. Highly epitaxial (116)-oriented films were deposited on SrTiO3 (110) substrates. These films were also very smooth with root mean square (RMS...

  7. Chemical vapor deposited diamond-on-diamond powder composites (LDRD final report)

    SciTech Connect (OSTI)

    Panitz, J.K.; Hsu, W.L.; Tallant, D.R.; McMaster, M.; Fox, C.; Staley, D.

    1995-12-01T23:59:59.000Z

    Densifying non-mined diamond powder precursors with diamond produced by chemical vapor infiltration (CVI) is an attractive approach for forming thick diamond deposits that avoids many potential manufacturability problems associated with predominantly chemical vapor deposition (CVD) processes. The authors developed techniques for forming diamond powder precursors and densified these precursors in a hot filament-assisted reactor and a microwave plasma-assisted reactor. Densification conditions were varied following a fractional factorial statistical design. A number of conclusions can be drawn as a result of this study. High density diamond powder green bodies that contain a mixture of particle sizes solidify more readily than more porous diamond powder green bodies with narrow distributions of particle sizes. No composite was completely densified although all of the deposits were densified to some degree. The hot filament-assisted reactor deposited more material below the exterior surface, in the interior of the powder deposits; in contrast, the microwave-assisted reactor tended to deposit a CVD diamond skin over the top of the powder precursors which inhibited vapor phase diamond growth in the interior of the powder deposits. There were subtle variations in diamond quality as a function of the CVI process parameters. Diamond and glassy carbon tended to form at the exterior surface of the composites directly exposed to either the hot filament or the microwave plasma. However, in the interior, e.g. the powder/substrate interface, diamond plus diamond-like-carbon formed. All of the diamond composites produced were grey and relatively opaque because they contained flawed diamond, diamond-like-carbon and glassy carbon. A large amount of flawed and non-diamond material could be removed by post-CVI oxygen heat treatments. Heat treatments in oxygen changed the color of the composites to white.

  8. Nanoporous films for epitaxial growth of single crystal semiconductor materials : final LDRD report.

    SciTech Connect (OSTI)

    Rowen, Adam M.; Koleske, Daniel David; Fan, Hongyou; Brinker, C. Jeffrey; Burckel, David Bruce; Williams, John Dalton; Arrington, Christian L.; Steen, William Arthur

    2007-10-01T23:59:59.000Z

    This senior council Tier 1 LDRD was focused on exploring the use of porous growth masks as a method for defect reduction during heteroepitaxial crystal growth. Initially our goal was to investigate porous silica as a growth mask, however, we expanded the scope of the research to include several other porous growth masks on various size scales, including mesoporous carbon, photolithographically patterned SU-8 and carbonized SU-8 structures. Use of photolithographically defined growth templates represents a new direction, unique in the extensive literature of patterned epitaxial growth, and presents the possibility of providing a single step growth mask. Additional research included investigation of pore viability via electrochemical deposition into high aspect ratio photoresist. This project was a small footprint research effort which, nonetheless, produced significant progress towards both the stated goal as well as unanticipated research directions.

  9. Controllable nitrogen doping in as deposited TiO{sub 2} film and its effect on post deposition annealing

    SciTech Connect (OSTI)

    Deng, Shaoren; Devloo-Casier, Kilian; Devulder, Wouter; Dendooven, Jolien; Deduytsche, Davy; Detavernier, Christophe, E-mail: Christophe.Detavernier@ugent.be [Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000 Gent (Belgium); Verbruggen, Sammy W. [Department of Bio-Engineering Sciences, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium and Center for Surface Chemistry and Catalysis, KU Leuven, Kasteelpark Arenberg 23, B-3001 Heverlee (Belgium); Lenaerts, Silvia [Department of Bio-Engineering Sciences, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Martens, Johan A. [Center for Surface Chemistry and Catalysis, KU Leuven, Kasteelpark Arenberg 23, B-3001 Heverlee (Belgium); Van den Berghe, Sven [SCK-CEN, Boeretang 200, B-2400 Mol (Belgium)

    2014-01-15T23:59:59.000Z

    In order to narrow the band gap of TiO{sub 2}, nitrogen doping by combining thermal atomic layer deposition (TALD) of TiO{sub 2} and plasma enhanced atomic layer deposition (PEALD) of TiN has been implemented. By altering the ratio between TALD TiO{sub 2} and PEALD TiN, the as synthesized TiO{sub x}N{sub y} films showed different band gaps (from 1.91?eV to 3.14?eV). In situ x-ray diffraction characterization showed that the crystallization behavior of these films changed after nitrogen doping. After annealing in helium, nitrogen doped TiO{sub 2} films crystallized into rutile phase while for the samples annealed in air a preferential growth of the anatase TiO{sub 2} along (001) orientation was observed. Photocatalytic tests of the degradation of stearic acid were done to evaluate the effect of N doping on the photocatalytic activity.

  10. Surface Plasmon Mediated Chemical Solution Deposition of Gold...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Plasmon Mediated Chemical Solution Deposition of Gold Nanoparticles on a Nanostructured Silver Surface. Surface Plasmon Mediated Chemical Solution Deposition of Gold Nanoparticles...

  11. Eulerian CFD Models to Predict Thermophoretic Deposition of Soot...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Eulerian CFD Models to Predict Thermophoretic Deposition of Soot Particles in EGR Coolers Eulerian CFD Models to Predict Thermophoretic Deposition of Soot Particles in EGR Coolers...

  12. Persistence of soil organic matter in eroding versus depositional...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Persistence of soil organic matter in eroding versus depositional landform positions. Persistence of soil organic matter in eroding versus depositional landform positions....

  13. Flagella-Mediated Differences in Deposition Dynamics for Azotobacter...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Flagella-Mediated Differences in Deposition Dynamics for Azotobacter vinelandii in Porous Media. Flagella-Mediated Differences in Deposition Dynamics for Azotobacter vinelandii in...

  14. Innovative High-Performance Deposition Technology for Low-Cost...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Innovative High-Performance Deposition Technology for Low-Cost Manufacturing of OLED Lighting Innovative High-Performance Deposition Technology for Low-Cost Manufacturing of OLED...

  15. aln film deposited: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    deposited by the reactive dc magnetron sputtering technique at room, amorphous and polycrystalline GaN thin films have been deposited using the magnetron sputtering...

  16. aln films deposited: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    deposited by the reactive dc magnetron sputtering technique at room, amorphous and polycrystalline GaN thin films have been deposited using the magnetron sputtering...

  17. Growth mechanism of graphene on platinum: Surface catalysis and carbon segregation

    SciTech Connect (OSTI)

    Sun, Jie, E-mail: jie.sun@chalmers.se; Lindvall, Niclas; Yurgens, August [Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg (Sweden); Nam, Youngwoo [Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg (Sweden); Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Cole, Matthew T. [Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, CB3 0FA Cambridge (United Kingdom); Teo, Kenneth B. K. [AIXTRON Nanoinstruments Ltd., Swavesey, CB24 4FQ Cambridge (United Kingdom); Woo Park, Yung [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)

    2014-04-14T23:59:59.000Z

    A model of the graphene growth mechanism of chemical vapor deposition on platinum is proposed and verified by experiments. Surface catalysis and carbon segregation occur, respectively, at high and low temperatures in the process, representing the so-called balance and segregation regimes. Catalysis leads to self-limiting formation of large area monolayer graphene, whereas segregation results in multilayers, which evidently “grow from below.” By controlling kinetic factors, dominantly monolayer graphene whose high quality has been confirmed by quantum Hall measurement can be deposited on platinum with hydrogen-rich environment, quench cooling, tiny but continuous methane flow and about 1000?°C growth temperature.

  18. Small Business Linked Deposit Program (Oklahoma)

    Broader source: Energy.gov [DOE]

    The Small Business Linked Deposit Program provides below-market interest rates for qualified small businesses and certified industrial parks through local financing sources. Loans are for a two...

  19. Source replenishment device for vacuum deposition

    DOE Patents [OSTI]

    Hill, R.A.

    1986-05-15T23:59:59.000Z

    A material source replenishment device for use with a vacuum deposition apparatus is described. The source replenishment device comprises an intermittent motion producing gear arrangement disposed within the vacuum deposition chamber. An elongated rod having one end operably connected to the gearing arrangement is provided with a multiarmed head at the opposite end disposed adjacent the heating element of the vacuum deposition apparatus. An inverted U-shaped source material element is releasably attached to the outer end of each arm member whereby said multiarmed head is moved to locate a first of said material elements above said heating element, whereupon said multiarmed head is lowered to engage said material element with the heating element and further lowered to release said material element on the heating element. After vaporization of said material element, second and subsequent material elements may be provided to the heating element without the need for opening the vacuum deposition apparatus to the atmosphere.

  20. Linked Deposit Loan Program (West Virginia)

    Broader source: Energy.gov [DOE]

    The Linked Deposit Loan Program is targeted at small, private firms with 50 or fewer employees and gross annual revenues of $5 million or less comes. This loan offered through the West Virginia...

  1. CALCIUM CARBONATE DEPOSITION IN GEOTHERMAL WELLBORES

    E-Print Network [OSTI]

    Stanford University

    geothermal energy exploration and development are most important. Geothermal resources in Costa Rica have of energy development in Costa Rica. The Miravalles geothermCALCIUM CARBONATE DEPOSITION IN GEOTHERMAL WELLBORES MIRAVALLES GEOTHERMAL FIELD COSTA RICA

  2. Chemical vapor deposition of antimicrobial polymer coatings

    E-Print Network [OSTI]

    Martin, Tyler Philip, 1977-

    2007-01-01T23:59:59.000Z

    There is large and growing interest in making a wide variety of materials and surfaces antimicrobial. Initiated chemical vapor deposition (iCVD), a solventless low-temperature process, is used to form thin films of polymers ...

  3. Resuspension and dry deposition research needs

    SciTech Connect (OSTI)

    Sehmel, G.A.

    1983-01-01T23:59:59.000Z

    The author concludes that better predictive models are needed for the signifcant health, ecological, and economic impacts of resuspended particles and their subsequent dry deposition. Both chemical and radioactive aerosols are discussed. (PSB)

  4. Polymer-assisted deposition of films

    DOE Patents [OSTI]

    McCleskey, Thomas M. (Los Alamos, NM); Burrell, Anthony K. (Los Alamos, NM); Jia, Quanxi (Los Alamos, NM); Lin, Yuan (Los Alamos, NM)

    2008-04-29T23:59:59.000Z

    A polymer assisted deposition process for deposition of metal oxide films is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures to yield metal oxide films. Such films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.

  5. Polymer-assisted deposition of films

    DOE Patents [OSTI]

    McCleskey, Thomas M. (Los Alamos, NM); Burrell; Anthony K. (Los Alamos, NM); Jia; Quanxi (Los Alamos, NM); Lin; Yuan (Los Alamos, NM)

    2009-10-20T23:59:59.000Z

    A polymer assisted deposition process for deposition of metal oxide films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures to yield metal oxide films and the like. Such films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.

  6. Skeletal crystals of calcite and trona from hot-spring deposits in Kenya and New Zealand

    SciTech Connect (OSTI)

    Jones, B. [Univ. of Alberta, Edmonton, Alberta (Canada). Dept. of Earth and Atmospheric Sciences; Renaut, R.W. [Univ. of Saskatchewan, Saskatoon, Saskatchewan (Canada). Dept. of Geological Sciences

    1996-01-01T23:59:59.000Z

    Skeletal crystals are hollow crystals that develop because their outer walls grow before their cores. The presence of skeletal crystals of calcite (three types--trigonal prisms, hexagonal prisms, and plates) and trona in hot (> 90 C) spring deposits in New Zealand (Waikite Springs and Ohaaki Pool) and Kenya (Lorusio hot springs) shows that they can form in natural sedimentary regimes. Analysis of samples from these deposits shows that this crystal morphology develops under disequilibrium conditions that are unrelated to a specific environmental or diagenetic setting. Skeletal crystals transform into solid crystals when subsequent precipitation fills their hollow cores. In some cases, this may involve precipitation of crystalline material that has a sieve-like texture. In other examples, the skeletal crystal provides a framework upon which other materials can be precipitated. Walls in the skeletal trigonal calcite prisms from Waikite Springs are formed of subcrystals that mimic the shape of the parent crystal. Similarly, plate-like skeletal crystals from Lorusio are formed of densely packed subcrystals that are < 0.5 {micro}m long. Conversely, the walls of the skeletal hexagonal calcite crystals from Ohaaki Pool and the skeletal trona crystals from Lorusio are not formed of subcrystals. Recognition of skeletal crystals is important because they represent growth that follows the reverse pattern of normal growth. Failure to recognize that crystal growth followed the skeletal motif may lead to false interpretations concerning the growth of a crystal.

  7. From Ultrananocrystalline Diamond to Single Crystal Diamond Growth in Hot Filament and Microwave Plasma-Enhanced CVD Reactors: a Unified Model for Growth Rates and

    E-Print Network [OSTI]

    Bristol, University of

    From Ultrananocrystalline Diamond to Single Crystal Diamond Growth in Hot Filament and Microwave, Moscow State UniVersity, 119991 Moscow, Russia ReceiVed: April 29, 2008 CVD Diamond can now be deposited either in the form of single crystal homoepitaxial layers, or as polycrystalline films with crystal sizes

  8. Atomic layer deposition of bismuth oxide using Bi(OCMe{sub 2}{sup i}Pr){sub 3} and H{sub 2}O

    SciTech Connect (OSTI)

    Austin, Dustin Z., E-mail: austind@eecs.oregonstate.edu; Conley, John F., E-mail: jconley@eecs.oregonstate.edu [Department of Electrical Engineering and Computer Science, Oregon State University, Corvallis, Oregon 97331 (United States); Allman, Derryl; Price, David; Hose, Sallie [ON Semiconductor, Technology Development, Gresham, Oregon 97030 (United States); Saly, Mark [SAFC Hitech, Haverhill, Massachusetts 01832 (United States)

    2014-01-15T23:59:59.000Z

    Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe{sub 2}{sup i}Pr){sub 3} and H{sub 2}O at deposition temperatures between 90 and 270?°C on Si{sub 3}N{sub 4}, TaN, and TiN substrates. Films were analyzed using spectroscopic ellipsometry, x-ray diffraction, x-ray reflectivity, high-resolution transmission electron microscopy, and Rutherford backscattering spectrometry. Bi{sub 2}O{sub 3} films deposited at 150?°C have a linear growth per cycle of 0.039?nm/cycle, density of 8.3?g/cm{sup 3}, band gap of approximately 2.9?eV, low carbon content, and show the ? phase structure with a (201) preferred crystal orientation. Deposition temperatures above 210?°C and postdeposition anneals caused uneven volumetric expansion, resulting in a decrease in film density, increased interfacial roughness, and degraded optical properties.

  9. Catalyst-induced growth of carbon nanotubes on tips of cantilevers and nanowires

    DOE Patents [OSTI]

    Lee, James Weifu; Lowndes, Douglas H.; Merkulov, Vladimir I.; Eres, Gyula; Wei, Yayi; Greenbaum, Elias; Lee, Ida

    2004-06-29T23:59:59.000Z

    A method is described for catalyst-induced growth of carbon nanotubes, nanofibers, and other nanostructures on the tips of nanowires, cantilevers, conductive micro/nanometer structures, wafers and the like. The method can be used for production of carbon nanotube-anchored cantilevers that can significantly improve the performance of scaning probe microscopy (AFM, EFM etc). The invention can also be used in many other processes of micro and/or nanofabrication with carbon nanotubes/fibers. Key elements of this invention include: (1) Proper selection of a metal catalyst and programmable pulsed electrolytic deposition of the desired specific catalyst precisely at the tip of a substrate, (2) Catalyst-induced growth of carbon nanotubes/fibers at the catalyst-deposited tips, (3) Control of carbon nanotube/fiber growth pattern by manipulation of tip shape and growth conditions, and (4) Automation for mass production.

  10. Carbon impurities on graphene synthesized by chemical vapor deposition on platinum

    SciTech Connect (OSTI)

    Ping, Jinglei; Fuhrer, Michael S., E-mail: michael.fuhrer@monash.edu [Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742-4111, USA and School of Physics, Monash University, 3800 Victoria (Australia)

    2014-07-28T23:59:59.000Z

    We report nanocrystalline carbon impurities coexisting with graphene synthesized via chemical vapor deposition on platinum. For certain growth conditions, we observe micron-size island-like impurity layers which can be mistaken for second graphene layers in optical microscopy or scanning electron microscopy. The island orientation depends on the crystalline orientation of the Pt, as shown by electron backscatter diffraction, indicating growth of carbon at the platinum surface below graphene. Dark-field transmission electron microscopy indicates that in addition to uniform single-crystal graphene, our sample is decorated with nanocrystalline carbon impurities with a spatially inhomogeneous distribution. The impurity concentration can be reduced significantly by lowering the growth temperature. Raman spectra show a large D peak, however, electrical characterization shows high mobility (?8000?cm{sup 2}/Vs), indicating a limitation for Raman spectroscopy in characterizing the electronic quality of graphene.

  11. Method for deposition of a conductor in integrated circuits

    DOE Patents [OSTI]

    Creighton, J.R.; Dominguez, F.; Johnson, A.W.; Omstead, T.R.

    1997-09-02T23:59:59.000Z

    A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten. 2 figs.

  12. Method for deposition of a conductor in integrated circuits

    DOE Patents [OSTI]

    Creighton, J. Randall (Albuquerque, NM); Dominguez, Frank (Albuquerque, NM); Johnson, A. Wayne (Albuquerque, NM); Omstead, Thomas R. (Albuquerque, NM)

    1997-01-01T23:59:59.000Z

    A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten.

  13. Modeling the Early Stages of Thin Film Formation by Energetic Atom Deposition

    E-Print Network [OSTI]

    Ghoniem, Nasr M.

    system to condense superthermal free particles on a host material. Ion-beam deposition systems deposit

  14. Growth of Large-Area Aligned Molybdenum Nanowires by High Temperature Chemical Vapor Deposition: Synthesis, Growth Mechanism, and Device Application

    E-Print Network [OSTI]

    Wang, Zhong L.

    , thermogravimetry, and differential scanning calorimetry analysis, as well as structure analysis by electron on the decomposition of MoO2 vapors through condensation of its vapor at high substrate temperatures. The aligned nanowires with H2 gas.6d-f However, the reduction process degrades the crystal- linity of the nanowires

  15. Transition between wurtzite and zinc-blende GaN: An effect of deposition condition of molecular-beam epitaxy

    SciTech Connect (OSTI)

    Shi, B. M.; Xie, M. H.; Wu, H. S.; Wang, N.; Tong, S. Y. [Department of Physics, University of Hong Kong, Pokfulam Road, Hong Kong (China); Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China); Department of Physics and Materials Science, City University of Hong Kong, Kowloon Tang, Hong Kong (China)

    2006-10-09T23:59:59.000Z

    GaN exists in both wurtzite and zinc-blende phases and the growths of the two on its (0001) or (111) surfaces are achieved by choosing proper deposition conditions of molecular-beam epitaxy (MBE). At low substrate temperatures but high gallium fluxes, metastable zinc-blende GaN films are obtained, whereas at high temperatures and/or using high nitrogen fluxes, equilibrium wurtzite phase GaN epilayers resulted. This dependence of crystal structure on substrate temperature and source flux is not affected by deposition rate. Rather, the initial stage nucleation kinetics plays a primary role in determining the crystallographic structures of epitaxial GaN by MBE.

  16. (pulsed laser deposition, PLD) (ultra-short pulsed laser deposition, uPLD)

    E-Print Network [OSTI]

    (ultra-short pulsed laser deposition, uPLD) PLD (Yttrium barium copper oxide , YBa2Cu3O7-, YBCO) YBCO-2-1 YBCO http://en.wikipedia.org/wiki/File:Ybco002.svg #12;3 1-3 (ultra-short pulsed laser #12;i #12;ii #12;iii #12;iv (pulsed laser deposition, PLD) PLD

  17. Apparatus for laser assisted thin film deposition

    DOE Patents [OSTI]

    Warner, Bruce E. (Pleasanton, CA); McLean, II, William (Oakland, CA)

    1996-01-01T23:59:59.000Z

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus.

  18. Apparatus for laser assisted thin film deposition

    DOE Patents [OSTI]

    Warner, B.E.; McLean, W. II

    1996-02-13T23:59:59.000Z

    A pulsed laser deposition apparatus uses fiber optics to deliver visible output beams. One or more optical fibers are coupled to one or more laser sources, and delivers visible output beams to a single chamber, to multiple targets in the chamber or to multiple chambers. The laser can run uninterrupted if one of the deposition chambers ceases to operate because other chambers can continue their laser deposition processes. The laser source can be positioned at a remote location relative to the deposition chamber. The use of fiber optics permits multi-plexing. A pulsed visible laser beam is directed at a generally non-perpendicular angle upon the target in the chamber, generating a plume of ions and energetic neutral species. A portion of the plume is deposited on a substrate as a thin film. A pulsed visible output beam with a high pulse repetition frequency is used. The high pulse repetition frequency is greater than 500 Hz, and more preferably, greater than about 1000 Hz. Diamond-like-carbon (DLC) is one of the thin films produced using the apparatus. 9 figs.

  19. Dual ion beam assisted deposition of biaxially textured template layers

    DOE Patents [OSTI]

    Groves, James R.; Arendt, Paul N.; Hammond, Robert H.

    2005-05-31T23:59:59.000Z

    The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion beams for the ion beam assisted deposition whereby thick layers can be deposited without degradation of the desired properties by the material. The ability to deposit thicker layers without loss of properties provides a significantly broader deposition window for the process.

  20. Modeling tin whisker growth.

    SciTech Connect (OSTI)

    Weinberger, Christopher Robert

    2013-08-01T23:59:59.000Z

    Tin, lead, and lead-tin solders are the most commonly used solders due to their low melting temperatures. However, due to the toxicity problems, lead must now be removed from solder materials. This has lead to the re-emergence of the issue of tin whisker growth. Tin whiskers are a microelectronic packaging issue because they can lead to shorts if they grow to sufficient length. However, the cause of tin whisker growth is still not well understood and there is lack of robust methods to determine when and if whiskering will be a problem. This report summarizes some of the leading theories on whisker growth and attempts to provide some ideas towards establishing the role microstructure plays in whisker growth.

  1. Planar elliptic growth

    SciTech Connect (OSTI)

    Mineev, Mark [Los Alamos National Laboratory

    2008-01-01T23:59:59.000Z

    The planar elliptic extension of the Laplacian growth is, after a proper parametrization, given in a form of a solution to the equation for areapreserving diffeomorphisms. The infinite set of conservation laws associated with such elliptic growth is interpreted in terms of potential theory, and the relations between two major forms of the elliptic growth are analyzed. The constants of integration for closed form solutions are identified as the singularities of the Schwarz function, which are located both inside and outside the moving contour. Well-posedness of the recovery of the elliptic operator governing the process from the continuum of interfaces parametrized by time is addressed and two examples of exact solutions of elliptic growth are presented.

  2. Renewable Energy Growth Program

    Broader source: Energy.gov [DOE]

    In 2014, Act H 7727 created the Renewable Energy Growth (REG) program with the goal to promote installation of grid connected renewable energy within the load zones of electric distribution...

  3. Robust Growth Determinants

    E-Print Network [OSTI]

    Doppelhofer, Gernot; Weeks, Melvyn

    2011-01-31T23:59:59.000Z

    This paper investigates the robustness of determinants of economic growth in the presence of model uncertainty, parameter heterogeneity and outliers. The robust model averaging approach introduced in the paper uses a flexible and parsimonious...

  4. Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment

    SciTech Connect (OSTI)

    Steven Brandt, E.; Grace, Jeremy M. [Eastman Kodak Company, 1999 Lake Avenue, Rochester, New York 14650-2022 (United States)

    2012-01-15T23:59:59.000Z

    The role of surface hydroxyl content in atomic layer deposition (ALD) of aluminum oxide (AO) on polymers is demonstrated by performing an atomic layer deposition of AO onto a variety of polymer types, before and after pretreatment in a plasma struck in water vapor. The treatment and deposition reactions are performed in situ in a high vacuum chamber that is interfaced to an x-ray photoelectron spectrometer to prevent adventitious exposure to atmospheric contaminants. X-ray photoelectron spectroscopy is used to follow the surface chemistries of the polymers, including theformation of surface hydroxyls and subsequent growth of AO by ALD. Using dimethyl aluminum isopropoxide and water as reactants, ALD is obtained for water-plasma-treated poly(styrene) (PS), poly(propylene) (PP), poly(vinyl alcohol) (PVA), and poly(ethylene naphthalate) (PEN). For PS, PP, and PEN, initial growth rates of AO on the native (untreated) polymers are at least an order of magnitude lower than on the same polymer surface following the plasma treatment. By contrast, native PVA is shown to initiate ALD of AO as a result of the presence of intrinsic surface hydroxyls that are derived from the repeat unit of this polymer.

  5. Fabrication of ZnO nanorod using spray-pyrolysis and chemical bath deposition method

    SciTech Connect (OSTI)

    Ramadhani, Muhammad F., E-mail: brian@tf.itb.ac.id; Pasaribu, Maruli A. H., E-mail: brian@tf.itb.ac.id; Yuliarto, Brian, E-mail: brian@tf.itb.ac.id; Nugraha, E-mail: brian@tf.itb.ac.id [Advanced Functional Materials Laboratory, Engineering Physics Department Faculty of Industrial Technology, Institut Teknologi Bandung (Indonesia)

    2014-02-24T23:59:59.000Z

    ZnO thin films with nanorod structure were deposited using Ultrasonic Spray Pyrolysis method for seed growth, and Chemical Bath Deposition (CBD) for nanorod growth. High purity Zn-hydrate and Urea are used to control Ph were dissolved in ethanol and aqua bidest in Ultrasonic Spray Pyrolysis process. Glass substrate was placed above the heater plate of reaction chamber, and subsequently sprayed with the range duration of 5, 10 and 20 minutes at the temperatures of 3500 C. As for the Chemical Bath Deposition, the glass substrate with ZnO seed on the surface was immerse to Zn-hydrate, HMTA (Hexa Methylene Tetra Amine) and deionized water solution for duration of 3, 5 and 7 hour and temperatures of 600 C, washed in distilled water, dried, and annealed at 3500 C for an hour. The characterization of samples was carried out to reveal the surface morphology using Scanning Electron Microscopy (SEM). From the data, the combination of 5 minutes of Ultrasonic Spray Pyrolysis process and 3 hour of CBD has showed the best structure of nanorod. Meanwhile the longer Spraying process and CBD yield the bigger nanorod structure that have been made, and it makes the films more dense which make the nanorod collide each other and as a result produce unsymetric nanorod structure.

  6. FGF growth factor analogs

    DOE Patents [OSTI]

    Zamora, Paul O. (Gaithersburg, MD); Pena, Louis A. (Poquott, NY); Lin, Xinhua (Plainview, NY); Takahashi, Kazuyuki (Germantown, MD)

    2012-07-24T23:59:59.000Z

    The present invention provides a fibroblast growth factor heparin-binding analog of the formula: ##STR00001## where R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, X, Y and Z are as defined, pharmaceutical compositions, coating compositions and medical devices including the fibroblast growth factor heparin-binding analog of the foregoing formula, and methods and uses thereof.

  7. On-line coating of glass with tin oxide by atmospheric pressure chemical vapor deposition.

    SciTech Connect (OSTI)

    Allendorf, Mark D.; Sopko, J.F. (PPF Industries, Pittsburgh, PA); Houf, William G.; Chae, Yong Kee; McDaniel, Anthony H.; Li, M. (PPF Industries, Pittsburgh, PA); McCamy, J.W. (PPF Industries, Pittsburgh, PA)

    2006-11-01T23:59:59.000Z

    Atmospheric pressure chemical vapor deposition (APCVD) of tin oxide is a very important manufacturing technique used in the production of low-emissivity glass. It is also the primary method used to provide wear-resistant coatings on glass containers. The complexity of these systems, which involve chemical reactions in both the gas phase and on the deposition surface, as well as complex fluid dynamics, makes process optimization and design of new coating reactors a very difficult task. In 2001 the U.S. Dept. of Energy Industrial Technologies Program Glass Industry of the Future Team funded a project to address the need for more accurate data concerning the tin oxide APCVD process. This report presents a case study of on-line APCVD using organometallic precursors, which are the primary reactants used in industrial coating processes. Research staff at Sandia National Laboratories in Livermore, CA, and the PPG Industries Glass Technology Center in Pittsburgh, PA collaborated to produce this work. In this report, we describe a detailed investigation of the factors controlling the growth of tin oxide films. The report begins with a discussion of the basic elements of the deposition chemistry, including gas-phase thermochemistry of tin species and mechanisms of chemical reactions involved in the decomposition of tin precursors. These results provide the basis for experimental investigations in which tin oxide growth rates were measured as a function of all major process variables. The experiments focused on growth from monobutyltintrichloride (MBTC) since this is one of the two primary precursors used industrially. There are almost no reliable growth-rate data available for this precursor. Robust models describing the growth rate as a function of these variables are derived from modeling of these data. Finally, the results are used to conduct computational fluid dynamic simulations of both pilot- and full-scale coating reactors. As a result, general conclusions are reached concerning the factors affecting the growth rate in on-line APCVD reactors. In addition, a substantial body of data was generated that can be used to model many different industrial tin oxide coating processes. These data include the most extensive compilation of thermochemistry for gas-phase tin-containing species as well as kinetic expressions describing tin oxide growth rates over a wide range of temperatures, pressures, and reactant concentrations.

  8. Ash & Pulverized Coal Deposition in Combustors & Gasifiers

    SciTech Connect (OSTI)

    Goodarz Ahmadi

    1998-12-02T23:59:59.000Z

    Further progress in achieving the objectives of the project was made in the period of October 1 to December 31, 1996. In particular, the sublayer model for evaluating the particle deposition in turbulent flows was extended to include the effect of particle rebound. A new more advance flow model for the near wall vortices is also used in these analysis. The computational model for simulating particle transport in turbulent flows was used to analyze the dispersion and deposition of particles in a recirculating flow region. The predictions of the particle resuspension model is compared with the experimental data. It is shown that when the effects of the near wall flow structure, as we as the surface roughness are included the model agrees with the available experimental data. Considerable progress was also made in the direct numerical simulation of particle removal process in turbulent gas flows. Experimental data for transport and deposition of glass fiber in the aerosol wind tunnel was also obtained.

  9. Forming aspheric optics by controlled deposition

    DOE Patents [OSTI]

    Hawryluk, Andrew M. (Modesto, CA)

    1998-01-01T23:59:59.000Z

    An aspheric optical element formed by depositing material onto a spherical surface of an optical element by controlled deposition to form an aspheric surface of desired shape. A reflecting surface, single or multi-layer, can then be formed on the aspheric surface by evaporative or sputtering techniques. Aspheric optical elements are suitable for deep ultra-violet (UV) and x-ray wavelengths. The reflecting surface may, for example, be a thin (.about.100 nm) layer of aluminum, or in some cases the deposited modifying layer may function as the reflecting surface. For certain applications, multi-layer reflective surfaces may be utilized, such as chromium-carbon or tungsten-carbon multi-layer, with the number of layers and thickness being determined by the intended application.

  10. Supplemental heating of deposition tooling shields

    DOE Patents [OSTI]

    Ohlhausen, James A. (Albuquerque, NM); Peebles, Diane E. (Albuquerque, NM); Hunter, John A. (Albuquerque, NM); Eckelmeyer, Kenneth H. (Albuquerque, NM)

    2000-01-01T23:59:59.000Z

    A method of reducing particle generation from the thin coating deposited on the internal surfaces of a deposition chamber which undergoes temperature variation greater than 100.degree. C. comprising maintaining the temperature variation of the internal surfaces low enough during the process cycle to keep thermal expansion stresses between the coating and the surfaces under 500 MPa. For titanium nitride deposited on stainless steel, this means keeping temperature variations under approximately 70.degree. C. in a chamber that may be heated to over 350.degree. C. during a typical processing operation. Preferably, a supplemental heater is mounted behind the upper shield and controlled by a temperature sensitive element which provides feedback control based on the temperature of the upper shield.

  11. Sol-gel deposited electrochromic coatings

    SciTech Connect (OSTI)

    Ozer, N.; Lampert, C.M.

    1995-06-01T23:59:59.000Z

    Electrochromic devices have increasing application in display devices, switchable mirrors and smart windows. A variety of vacuum deposition technologies have been used to make electrochromic devices. The sol- gel process offers an alternative approach to the synthesis of optical quality and low cost electrochromic device layers. This study summarizes the developments in sol-gel deposited electrochromic films. The sol-gel process involves the formation of oxide networks upon hydrolysis-condensation of alkoxide precursors. In this study we cover the sol-gel deposited oxides of WO[sub 3], V[sub 2]O[sub 5], TiO[sub 2], Nb[sub 2]O[sub 5], and NiO[sub x].

  12. Worldwide deposition of strontium-90 through 1990

    SciTech Connect (OSTI)

    Monetti, M.A.

    1996-03-01T23:59:59.000Z

    Strontium-90 results from the Environmental Measurements Laboratory`s (EML) Global Fallout Program (GFP) are presented for the years 1987 through 1990. Quarterly {sup 90}Sr deposition results for the 66 sampling locations of EML`s GFP were generally low, indicating that there was no significant release of fission products into the atmosphere during this period. The global {sup 90}Sr deposition during these 4 years was lower than it has been for any similar period since this program began in 1958. Since there was no major atmospheric source of {sup 90}Sr during this period, the global cumulative deposit of {sup 90}Sr continued to decrease by radioactive decay to a 27 year low of 311.4 Pbq.

  13. Glow discharge plasma deposition of thin films

    DOE Patents [OSTI]

    Weakliem, Herbert A. (Pennington, NJ); Vossen, Jr., John L. (Bridgewater, NJ)

    1984-05-29T23:59:59.000Z

    A glow discharge plasma reactor for deposition of thin films from a reactive RF glow discharge is provided with a screen positioned between the walls of the chamber and the cathode to confine the glow discharge region to within the region defined by the screen and the cathode. A substrate for receiving deposition material from a reactive gas is positioned outside the screened region. The screen is electrically connected to the system ground to thereby serve as the anode of the system. The energy of the reactive gas species is reduced as they diffuse through the screen to the substrate. Reactive gas is conducted directly into the glow discharge region through a centrally positioned distribution head to reduce contamination effects otherwise caused by secondary reaction products and impurities deposited on the reactor walls.

  14. Liquid injection plasma deposition method and apparatus

    DOE Patents [OSTI]

    Kong, Peter C. (Idaho Falls, ID); Watkins, Arthur D. (Idaho Falls, ID)

    1999-01-01T23:59:59.000Z

    A liquid injection plasma torch deposition apparatus for depositing material onto a surface of a substrate may comprise a plasma torch for producing a jet of plasma from an outlet nozzle. A plasma confinement tube having an inlet end and an outlet end and a central bore therethrough is aligned with the outlet nozzle of the plasma torch so that the plasma jet is directed into the inlet end of the plasma confinement tube and emerges from the outlet end of the plasma confinement tube. The plasma confinement tube also includes an injection port transverse to the central bore. A liquid injection device connected to the injection port of the plasma confinement tube injects a liquid reactant mixture containing the material to be deposited onto the surface of the substrate through the injection port and into the central bore of the plasma confinement tube.

  15. Liquid injection plasma deposition method and apparatus

    DOE Patents [OSTI]

    Kong, P.C.; Watkins, A.D.

    1999-05-25T23:59:59.000Z

    A liquid injection plasma torch deposition apparatus for depositing material onto a surface of a substrate may comprise a plasma torch for producing a jet of plasma from an outlet nozzle. A plasma confinement tube having an inlet end and an outlet end and a central bore therethrough is aligned with the outlet nozzle of the plasma torch so that the plasma jet is directed into the inlet end of the plasma confinement tube and emerges from the outlet end of the plasma confinement tube. The plasma confinement tube also includes an injection port transverse to the central bore. A liquid injection device connected to the injection port of the plasma confinement tube injects a liquid reactant mixture containing the material to be deposited onto the surface of the substrate through the injection port and into the central bore of the plasma confinement tube. 8 figs.

  16. Chemical vapor deposition of group IIIB metals

    DOE Patents [OSTI]

    Erbil, A.

    1989-11-21T23:59:59.000Z

    Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula given in the patent where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula 1 is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula 1 and a heat decomposable tellurium compound under nonoxidizing conditions.

  17. Ash & Pulverized Coal Deposition in Combustors & Gasifiers

    SciTech Connect (OSTI)

    Goodarz Ahmadi

    1998-12-02T23:59:59.000Z

    Further progress in achieving the objectives of the project was made in the period of January I to March 31, 1998. The direct numerical simulation of particle removal process in turbulent gas flows was completed. Variations of particle trajectories are studied. It is shown that the near wall vortices profoundly affect the particle removal process in turbulent boundary layer flows. Experimental data for transport and deposition of fibrous particles in the aerosol wind tunnel was obtained. The measured deposition velocity for irregular fibrous particles is compared with the empirical correlation and the available data for glass fibers and discussed. Additional progress on the sublayer model for evaluating the particle deposition and resuspension in turbulent flows was made.

  18. Growth strategies to control tapering in Ge nanowires

    SciTech Connect (OSTI)

    Periwal, P.; Baron, T., E-mail: thierry.baron@cea.fr; Salem, B.; Bassani, F. [Laboratoire des Technologies de la Microelectronique (LTM), UMR 5129 CNRS-UJF, CEA Grenoble, 17 Rue des Martyrs, 38054 Grenoble (France); Gentile, P. [SiNaPs Laboratory SP2M, UMR-E, CEA/UJF-Grenoble 1, INAC, 38054 Grenoble (France)

    2014-04-01T23:59:59.000Z

    We report the effect of PH{sub 3} on the morphology of Au catalyzed Ge nanowires (NWs). Ge NWs were grown on Si (111) substrate at 400?°C in the presence of PH{sub 3}, using vapor-liquid-solid method by chemical vapor deposition. We show that high PH{sub 3}/GeH{sub 4} ratio causes passivation at NW surface. At high PH{sub 3} concentration phosphorous atoms attach itself on NW surface and form a self-protection coating that prevents conformal growth and leads to taper free nanostructures. However, in case of low PH{sub 3} flux the combination of axial and radial growth mechanism occurs resulting in conical structure. We have also investigated axial PH{sub 3}-intrinsic junctions in Ge NWs. The unusual NW shape is attributed to a combination of catalyzed, uncatalyzed and diffusion induced growth.

  19. Method for using salt deposits for storage

    SciTech Connect (OSTI)

    Hooper, M. W.; Voorhees, E. J.

    1984-12-18T23:59:59.000Z

    A method for developing, evacuating, using, sealing, and re-entering multiple stacked cavities which are created from a single well in salt deposits. The cavities are created in a salt deposit by circulating raw water through concentric casing strings in the well. Each of the cavities is evacuated of liquids prior to use. After storage material is injected into a cavity, the cavity is sealed by setting a plug in the well bore above the top of the cavity. The cavities may be re-entered by drilling out the plug or by drilling a directional well directly into the cavity.

  20. Polymer-assisted deposition of films

    DOE Patents [OSTI]

    McCleskey,Thomas M. (Los Alamos, NM); Burrell,Anthony K. (Los Alamos, NM); Jia,Quanxi (Los Alamos, NM); Lin,Yuan (Chandler, AZ)

    2012-02-28T23:59:59.000Z

    A polymer assisted deposition process for deposition of metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be conformal on a variety of substrates including non-planar substrates. In some instances, the films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.

  1. Ruthenium / aerogel nanocomposits via Atomic Layer Deposition

    SciTech Connect (OSTI)

    Biener, J; Baumann, T F; Wang, Y; Nelson, E J; Kucheyev, S O; Hamza, A V; Kemell, M; Ritala, M; Leskela, M

    2006-08-28T23:59:59.000Z

    We present a general approach to prepare metal/aerogel nanocomposites via template directed atomic layer deposition (ALD). In particular, we used a Ru ALD process consisting of alternating exposures to bis(cyclopentadienyl)ruthenium (RuCp{sub 2}) and air at 350 C to deposit metallic Ru nanoparticles on the internal surfaces of carbon and silica aerogels. The process does not affect the morphology of the aerogel template and offers excellent control over metal loading by simply adjusting the number of ALD cycles. We also discuss the limitations of our ALD approach, and suggest ways to overcome these.

  2. Effect of process parameters on properties of argon–nitrogen plasma for titanium nitride film deposition

    SciTech Connect (OSTI)

    Saikia, Partha; Kakati, Bharat [Centre of Plasma Physics, Institute for Plasma Research, Nazirakhat, Sonapur-782 402, Kamrup, Assam (India)] [Centre of Plasma Physics, Institute for Plasma Research, Nazirakhat, Sonapur-782 402, Kamrup, Assam (India)

    2013-11-15T23:59:59.000Z

    In this study, the effect of working pressure and input power on the physical properties and sputtering efficiencies of argon–nitrogen (Ar/N{sub 2}) plasma in direct current magnetron discharge is investigated. The discharge in Ar/N{sub 2} is used to deposit TiN films on high speed steel substrate. The physical plasma parameters are determined by using Langmuir probe and optical emission spectroscopy. On the basis of the different reactions in the gas phase, the variation of plasma parameters and sputtering rate are explained. A prominent change of electron temperature, electron density, ion density, and degree of ionization of Ar is found as a function of working pressure and input power. The results also show that increasing working pressure exerts a negative effect on film deposition rate while increasing input power has a positive impact on the same. To confirm the observed physical properties and evaluate the texture growth as a function of deposition parameters, x-ray diffraction study of deposited TiN films is also done.

  3. Laser Directed Growth of Carbon-Based Nanostructures by Plasmon Resonant

    E-Print Network [OSTI]

    Cronin, Steve

    Laser Directed Growth of Carbon-Based Nanostructures by Plasmon Resonant Chemical Vapor Deposition the strong plasmon resonance of gold nanoparticles in the catalytic decomposition of CO to grow various forms of carbonaceous materials. Irradiating gold nanoparticles in a CO environment at their plasmon resonant frequency

  4. Revue Mdecine Vtrinaire, 2000, 151, 2, 99-104 Mechanism of antimicrobial growth promoters used in

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    . Antimicrobial growth promoters also decrease the fermentation of carbohydrates and the decomposition of bile to a reduced turnover in the gut epithelium. In cattle, the rumen flora fermentations are oriented toward propionic acid production, instead of acetic acid, favouring the meat deposit, and less methane is produced

  5. Effects of oxygen on the growth characteristics of carbon nanotubes on conductive substrates

    E-Print Network [OSTI]

    Bonaparte, Ryan K

    2009-01-01T23:59:59.000Z

    The effects of oxygen on Fe-catalyzed carbon nanotube (CNT) growth on Ta substrates was studied. CNTs were grown on Fe thin-film catalysts deposited on silicon substrates via exposure to C?H? in a thermal chemical vapor ...

  6. Effects of phosphorus implantation and subsequent growth on diamond Euo Sik Choa,*, Cheon An Leea

    E-Print Network [OSTI]

    Lee, Jong Duk

    ]. Espe- cially, polycrystalline diamond films grown by microwave plasma chemical vapor deposition (MPCVD, and their fabrication is easy and economical. Polycrystalline diamond film has a rough surface and a lot of defectsEffects of phosphorus implantation and subsequent growth on diamond Euo Sik Choa,*, Cheon An Leea

  7. MOVPE growth of semipolar III-nitride semiconductors on CVD graphene Priti Gupta n

    E-Print Network [OSTI]

    Deshmukh, Mandar M.

    MOVPE growth of semipolar III-nitride semiconductors on CVD graphene Priti Gupta n , A.A. Rahman pressure metalorganic vapor phase epitaxy B1. Graphene B1. Nitrides B2. Semiconducting III­V materials a b on graphene grown by chemical vapour deposition. GaN, AlGaN alloys, and InN layers are grown using an Al

  8. Hidden features of the catalyst nanoparticles favorable for single-walled carbon nanotube growth

    E-Print Network [OSTI]

    Curtarolo, Stefano

    nanotube growth by using chemical vapor deposition synthesis augmented by an attached mass spectrometer MS,16 Fig. 1 a , a widely debated issue in the literature.7­10 Based on the cal- culated Fe­C liquidus lines to mention that in our studies we use methane gas. Unlike methane, the dehydrogenation reactions of other

  9. Reduced Order Based Compensator Control of Thin Film Growth in a CVD Reactor

    E-Print Network [OSTI]

    Reduced Order Based Compensator Control of Thin Film Growth in a CVD Reactor H.T. Banks and H chemical vapor deposition (CVD) reactors. An in­ tegral component of this research program is the design of the reactor so that control and sensing are a basic component of the optimal design e#orts for the reactor. We

  10. Reduced Order Based Compensator Control of Thin Film Growth in a CVD Reactor

    E-Print Network [OSTI]

    Reduced Order Based Compensator Control of Thin Film Growth in a CVD Reactor H.T. Banks and H chemical vapor deposition (CVD) reactors. An in- tegral component of this research program is the design of the reactor so that control and sensing are a basic component of the optimal design efforts for the reactor

  11. Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

    E-Print Network [OSTI]

    Nabben, Reinhard

    Fermi Level Control of Point Defects During Growth of Mg-Doped GaN ZACHARY BRYAN,1,4 MARC HOFFMANN defects during metalorganic chem- ical vapor deposition (MOCVD) of Mg-doped GaN has been demonstrated of magnitude lower resistivity values compared with typical unan- nealed GaN:Mg samples. The PL spectra

  12. In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction

    E-Print Network [OSTI]

    As, Donat Josef

    from Knudsen cells. Cubic GaN layers were deposited at 720 °C directly on 3C-SiC substrates shutters the GaN surface was exposed to different Ga fluxes for a certain time. The substrate temperatureIn situ growth regime characterization of cubic GaN using reflection high energy electron

  13. Analysis of calorimetric measurements of grain growth L. C. Chena) and F. Spaepen

    E-Print Network [OSTI]

    Spaepen, Frans A.

    solidification4 or vapor deposition,' or in some of the materials prepared by gas condensation and compaction,6Analysis of calorimetric measurements of grain growth L. C. Chena) and F. Spaepen Division. The Kissinger' analysis of the shift of the transformation peaks as a function of heating rate is perhaps

  14. Low temperature atomic layer deposited ZnO photo thin film transistors

    SciTech Connect (OSTI)

    Oruc, Feyza B.; Aygun, Levent E.; Donmez, Inci; Biyikli, Necmi; Okyay, Ali K., E-mail: aokyay@ee.bilkent.edu.tr [Institute of Materials Science and Nanotechnology, Bilkent University, Bilkent, 06800 Ankara (Turkey); UNAM—National Nanotechnology Research Center, Bilkent University, Bilkent, 06800 Ankara (Turkey); Department of Electrical and Electronics Engineering, Bilkent University, Bilkent, 06800 Ankara (Turkey); Yu, Hyun Yong [The School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

    2015-01-01T23:59:59.000Z

    ZnO thin film transistors (TFTs) are fabricated on Si substrates using atomic layer deposition technique. The growth temperature of ZnO channel layers are selected as 80, 100, 120, 130, and 250?°C. Material characteristics of ZnO films are examined using x-ray photoelectron spectroscopy and x-ray diffraction methods. Stoichiometry analyses showed that the amount of both oxygen vacancies and interstitial zinc decrease with decreasing growth temperature. Electrical characteristics improve with decreasing growth temperature. Best results are obtained with ZnO channels deposited at 80?°C; I{sub on}/I{sub off} ratio is extracted as 7.8 × 10{sup 9} and subthreshold slope is extracted as 0.116 V/dec. Flexible ZnO TFT devices are also fabricated using films grown at 80?°C. I{sub D}–V{sub GS} characterization results showed that devices fabricated on different substrates (Si and polyethylene terephthalate) show similar electrical characteristics. Sub-bandgap photo sensing properties of ZnO based TFTs are investigated; it is shown that visible light absorption of ZnO based TFTs can be actively controlled by external gate bias.

  15. Niobium thin film deposition studies on copper surfaces for superconducting radio frequency cavity applications

    SciTech Connect (OSTI)

    W. M. Roach, D. B. Beringer, J. R. Skuza, W. A. Oliver, C. Clavero, C. E. Reece, R. A. Lukaszew

    2012-06-01T23:59:59.000Z

    Thin film coatings have the potential to increase both the thermal efficiency and accelerating gradient in superconducting radio frequency accelerator cavities. However, before this potential can be realized, systematic studies on structure-property correlations in these thin films need to be carried out since the reduced geometry, combined with specific growth parameters, can modify the physical properties of the materials when compared to their bulk form. Here, we present our systematic studies of Nb thin films deposited onto Cu surfaces to clarify possible reasons for the limited success that this process exhibited in previous attempts. We compare these films with Nb grown on other surfaces. In particular, we study the crystal structure and surface morphology and their effect on superconducting properties, such as critical temperature and lower critical field. We found that higher deposition temperature leads to a sharper critical temperature transition, but also to increased roughness indicating that there are competing mechanisms that must be considered for further optimization.

  16. Nanoporosity induced by ion implantation in deposited amorphous Ge thin films

    SciTech Connect (OSTI)

    Romano, L.; Impellizzeri, G.; Ruffino, F.; Miritello, M.; Grimaldi, M. G. [IMM-CNR MATIS and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, I-95123 Catania (Italy); Bosco, L. [Scuola Superiore di Catania, Via Valdisavoia 9, I-95123 Catania (Italy)

    2012-06-01T23:59:59.000Z

    The formation of a nano-porous structure in amorphous Ge thin film (sputter-deposited on SiO{sub 2}) during ion irradiation at room temperature with 300 keV Ge{sup +} has been observed. The porous film showed a sponge-like structure substantially different from the columnar structure reported for ion implanted bulk Ge. The voids size and structure resulted to be strongly affected by the material preparation, while the volume expansion turned out to be determined only by the nuclear deposition energy. In SiGe alloys, the swelling occurs only if the Ge concentration is above 90%. These findings rely on peculiar characteristics related to the mechanism of voids nucleation and growth, but they are crucial for future applications of active nanostructured layers such as low cost chemical and biochemical sensing devices or electrodes in batteries.

  17. Growth of GaN on SiC(0001) by Molecular Beam Epitaxy C. D. LEE (a), ASHUTOSH SAGAR (a), R. M. FEENSTRA

    E-Print Network [OSTI]

    Feenstra, Randall

    years as a substrate for both molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy of GaN of the substrate preparation and growth technique. Experimental GaN films of typically 1 mm thickness are deposited1 Growth of GaN on SiC(0001) by Molecular Beam Epitaxy C. D. LEE (a), ASHUTOSH SAGAR (a), R. M

  18. Rare Earth Element Mines, Deposits, and Occurrences

    E-Print Network [OSTI]

    Torgersen, Christian

    Rare Earth Element Mines, Deposits, and Occurrences by Greta J. Orris1 and Richard I. Grauch2 Open Table 1. Rare earth mineral codes and associated mineral names.......................................................................................6 Table 2. Non-rare earth mineral codes and associated mineral names

  19. Essays on Banking Crises and Deposit Insurance 

    E-Print Network [OSTI]

    Wang, Wen-Yao

    2009-05-15T23:59:59.000Z

    .................................................... 16 2.3.3 The Partial Deposit Insurance System ......................... 18 2.3.3.1 Depositors? Monitoring.................................... 18 2.3.3.2 Banks? Gambling Behavior.............................. 22 2... of the Gambling Return .......................................................................... 38 viii CHAPTER Page 2.6 Conclusions .............................................................................. 40 III FINANCIAL FRAGILITY...

  20. Panel 1 - comparative evaluation of deposition technologies

    SciTech Connect (OSTI)

    Fenske, G.R.; Stodolsky, F. [Argonne National Lab., IL (United States); Benson, D.K.; Pitts, R.J. [National Renewable Energy Lab., Golden, CO (United States); Bhat, D.G. [GTE Valenite Corp., Troy, MI (United States); Yulin Chen [Allison Gas Turbine Division, GM, Indianapolis, IN (United States); Gat, R.; Sunkara, M.K. [Case Western Reserve Univ., Cleveland, OH (United States); Kelly, M. [Stanford Univ., CA (United States); Lawler, J.E. [Univ. of Wisconsin, Madison (United States); Nagle, D.C. [Martin Marietta Labs., Baltimore, MD (United States); Outka, D. [Sandia National Laboratories, Livermore, CA (United States); Revankar, G.S. [Deere & Co., Moline, IL (United States); Subramaniam, V.V. [Ohio State Univ., Columbus (United States); Wilbur, P.J. [Colorado State Univ., Fort Collins (United States); Mingshow Wong [Northwestern Univ., Evanston, IL (United States); Woolam, W.E. [Southwest Research Inst., Arlington, VA (United States)

    1993-01-01T23:59:59.000Z

    This working group attempted to evaluate/compare the different types of deposition techniques currently under investigation for depositing diamond and diamond-like carbon films. A table lists the broad types of techniques that were considered for depositing diamond and diamond-like carbon films. After some discussion, it was agreed that any evaluation of the various techniques would be dependent on the end application. Thus the next action was to list the different areas where diamond and DLC films could find applications in transportation. These application areas are listed in a table. The table intentionally does not go into great detail on applications because that subject is dealt with specifically by Panel No. 4 - Applications To Transportation. The next action concentrated on identifying critical issues or limitations that need to be considered in evaluating the different processes. An attempt was then made to rank different broad categories of deposition techniques currently available or under development based on the four application areas and the limitations. These rankings/evaluations are given for diamond and DLC techniques. Finally, the working group tried to identify critical development and research issues that need to be incorporated into developing a long-term program that focuses on diamond/DLC coatings for transportation needs. 5 tabs.

  1. THESIS/DISSERTATION ACCEPTANCE AND DEPOSIT FORM

    E-Print Network [OSTI]

    Mills, Allen P.

    THESIS/DISSERTATION ACCEPTANCE AND DEPOSIT FORM Name: Student ID: Future Employment: (ex.: Asst Spring Summer Year: Title of Thesis/Dissertation: I authorize the library of the University of California, Riverside to use or duplicate my thesis/dissertation whenever the University Library is approached

  2. Electron and Photon Energy Deposition in Universe

    E-Print Network [OSTI]

    Toru Kanzaki; Masahiro Kawasaki

    2008-05-26T23:59:59.000Z

    We consider energy deposition of high energy electrons and photons in universe. We carry out detailed calculations of fractions of the initial energy of the injected electron or photon which are used to heat, ionize and excite background plasma in the early universe for various ionization states and redshifts.

  3. Chemical vapor deposition of aluminum oxide

    DOE Patents [OSTI]

    Gordon, Roy (Cambridge, MA); Kramer, Keith (Cleveland, OH); Liu, Xinye (Cambridge, MA)

    2000-01-01T23:59:59.000Z

    An aluminum oxide film is deposited on a heated substrate by CVD from one or more alkylaluminum alkoxide compounds having composition R.sub.n Al.sub.2 (OR').sub.6-n, wherein R and R' are alkyl groups and n is in the range of 1 to 5.

  4. Ultra-narrow ferromagnetic resonance in organic-based thin films grown via low temperature chemical vapor deposition

    SciTech Connect (OSTI)

    Yu, H.; Harberts, M.; Adur, R.; Hammel, P. Chris; Johnston-Halperin, E., E-mail: ejh@physics.osu.edu, E-mail: epstein@physics.osu.edu [Department of Physics, The Ohio State University, Columbus, Ohio 43210-1117 (United States); Lu, Y. [Department of Chemistry, The Ohio State University, Columbus, Ohio 43210-1173 (United States); Epstein, A. J., E-mail: ejh@physics.osu.edu, E-mail: epstein@physics.osu.edu [Department of Physics, The Ohio State University, Columbus, Ohio 43210-1117 (United States); Department of Chemistry, The Ohio State University, Columbus, Ohio 43210-1173 (United States)

    2014-07-07T23:59:59.000Z

    We present the growth of thin films of the organic-based ferrimagnetic semiconductor V[TCNE]{sub x} (x???2, TCNE: tetracyanoethylene) via chemical vapor deposition. Under optimized growth conditions, we observe a significant increase in magnetic homogeneity, as evidenced by a Curie temperature above 600?K and sharp magnetization switching. Further, ferromagnetic resonance studies reveal a single resonance with full width at half maximum linewidth of 1.4?G, comparable to the narrowest lines measured in inorganic magnetic materials and in contrast to previous studies that showed multiple resonance features. These characteristics are promising for the development of high frequency electronic devices that take advantage of the unique properties of this organic-based material, such as the potential for low cost synthesis combined with low temperature and conformal deposition on a wide variety of substrates.

  5. Evolution of morphology and structure of Pb thin films grown by pulsed laser deposition at different substrate temperatures

    SciTech Connect (OSTI)

    Lorusso, Antonella, E-mail: antonella.lorusso@le.infn.it; Maiolo, Berlinda; Perrone, Alessio [Dipartimento di Matematica e Fisica “E. De Giorgi,” Università del Salento, 73100 Lecce (Italy); Gontad, Francisco [Istituto Nazionale di Fisica Nucleare e Università del Salento, 73100 Lecce (Italy); Maruccio, Giuseppe [Dipartimento di Matematica e Fisica “E. De Giorgi,” Università del Salento, 73100 Lecce, Italy and National Nanotechnology Laboratory, Istituto Nanoscienze-CNR, Arnesano I-73100 (Italy); Tasco, Vittorianna [National Nanotechnology Laboratory, Istituto Nanoscienze-CNR, Arnesano I-73100 (Italy)

    2014-03-15T23:59:59.000Z

    Pb thin films were prepared by pulsed laser deposition on a Si (100) substrate at different growth temperatures to investigate their morphology and structure. The morphological analysis of the thin metal films showed the formation of spherical submicrometer grains whose average size decreased with temperature. X-ray diffraction measurements confirmed that growth temperature influences the Pb polycrystalline film structure. A preferred orientation of Pb (111) normal to the substrate was achieved at 30?°C and became increasingly pronounced along the Pb (200) plane as the substrate temperature increased. These thin films could be used to synthesize innovative materials, such as metallic photocathodes, with improved photoemission performances.

  6. Political connections, bank deposits, and formal deposit insurance: Evidence from an emerging economy

    E-Print Network [OSTI]

    Boyer, Edmond

    ; Deposit insurance system; Indonesia * Corresponding author (email: emmanuelle.nys@unilim.fr, tel.: +33 555., 2008; Fraser et al., 2006; Khwaja and Mian, 2005; Li et al., 2008); ii) a build up confidence

  7. Controlling Atomic Layer Deposition of TiO2 in Aerogels through Surface Functionalization

    SciTech Connect (OSTI)

    Ghosal, S; Baumann, T F; King, J S; Kucheyev, S; Wang, Y; Worsley, M A; Biener, J; Bent, S F; Hamza, A V

    2009-03-09T23:59:59.000Z

    This report demonstrates a chemical functionalization method for controlling atomic layer deposition (ALD) of TiO{sub 2} in low-density nanoporous materials. Functionalization of silica aerogel with trimethylsilane is shown to strongly suppress TiO{sub 2} growth via ALD. Subsequent modification of the functionalization through selective removal of the hydrocarbon groups reactivates the aerogel towards TiO{sub 2} deposition. These results demonstrate the potential use of ALD as a selective tool for creating novel nanoporous materials. Nanoporous materials present significant technological advantage for a wide range of applications, including catalysis, energy storage and conversion, nanoelectronics to name just a few (1-4). Hence, there is considerable interest in developing synthetic pathways for the fabrication of nanoporous materials with tailored properties. Aerogels (AGs) are unique low-density, open-cell porous materials consisting of submicrometer pores and ligaments that can be used as a robust material platform for designing novel nanoporous materials. In recent years, a synthetic approach based on ALD on AG templates has emerged as a promising method for the directed growth of nanoporous materials (5-11, 18). This approach has been used successfully to prepare millimeter-sized high aspect ratio aerogels coated uniformly with zinc oxide (ZnO), tungsten (W) and alumina (Al{sub 2}O{sub 3}) (10, 11). The ALD process utilizes two sequential, self-limiting surface reactions resulting in a layer-by-layer growth mode. The self limiting nature of the surface reactions makes ALD a particularly suitable technique for uniform deposition onto high aspect ratio porous substrates. Additionally, chemical specificity of the surface reactions in ALD enables one to control the deposition process through selective functionalization of the substrate surface. In fact the functionalization of planar substrates such as silicon wafers with organosilane groups (R{sub n}SiX{sub 4-n} (n = 1-3)) has been shown to deactivate the substrate towards ZrO{sub 2}, HfO{sub 2}, ZnO, and TiO{sub 2} ALD processes (12-16). A possible mechanism for the deactivation effect is the blocking of surface functional groups, such as hydroxyl (OH) moieties, which serve as chemisorption sites for the ALD precursors and hence are essential for nucleating the deposition process. Henceforth, we shall refer to these surface functional groups as nucleation sites for the ALD process.

  8. Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor

    SciTech Connect (OSTI)

    Jeon, Ki-Moon [Vacuum Center, Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, South Korea and Department of Advanced Materials Engineering, Dae Jeon University, Daejeon 300-716 (Korea, Republic of); Shin, Jae-Su [Department of Advanced Materials Engineering, Dae Jeon University, Daejeon 300-716 (Korea, Republic of); Yun, Ju-Young [Vacuum Center, Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, South Korea and Department of Nano and Bio Surface Science, University of Science and Technology (UST), Daejeon 305-333 (Korea, Republic of); Jun Lee, Sang [Center of Nanomaterials Characterization, Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, South Korea and Department of Nano Science, University of Science and Technology (UST), Daejeon 305-333 (Korea, Republic of); Kang, Sang-Woo, E-mail: swkang@kriss.re.kr [Vacuum Center, Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, South Korea and Department of Advanced Device Technology, University of Science and Technology (UST), Daejeon 305-333 (Korea, Republic of)

    2014-05-15T23:59:59.000Z

    The plasma-enhanced atomic layer deposition (PEALD) process was developed as a growth technique of SiO{sub 2} thin films using a plasma-activated triisopropylsilane [TIPS, ((iPr){sub 3}SiH)] precursor. TIPS was activated by an argon plasma at the precursor injection stage of the process. Using the activated TIPS, it was possible to control the growth rate per cycle of the deposited films by adjusting the plasma ignition time. The PEALD technique allowed deposition of SiO{sub 2} films at temperatures as low as 50?°C without carbon impurities. In addition, films obtained with plasma ignition times of 3?s and 10?s had similar values of root-mean-square surface roughness. In order to evaluate the suitability of TIPS as a precursor for low-temperature deposition of SiO{sub 2} films, the vapor pressure of TIPS was measured. The thermal stability and the reactivity of the gas-phase TIPS with respect to water vapor were also investigated by analyzing the intensity changes of the C–H and Si–H peaks in the Fourier-transform infrared spectrum of TIPS.

  9. Understanding the Nanotube Growth Mechanism: A Strategy to Control Nanotube Chirality during Chemical Vapor Deposition Synthesis

    E-Print Network [OSTI]

    Gomez Gualdron, Diego Armando 1983-

    2012-10-26T23:59:59.000Z

    For two decades, single-wall carbon nanotubes (SWCNTs) have captured the attention of the research community, and become one of the flagships of nanotechnology. Due to their remarkable electronic and optical properties, SWCNTs are prime candidates...

  10. Growth of nano-and microcrystalline silicon thin films at low temperature by pulsed electron deposition

    E-Print Network [OSTI]

    Zexian, Cao

    crystallites (heating-film silicon solar cells take a larger market share than the single- and polycrystalline silicon solar cells industry. In all the efforts, substrate heating or post-annealing at a temperature higher than 300 1C

  11. Understanding the Nanotube Growth Mechanism: A Strategy to Control Nanotube Chirality during Chemical Vapor Deposition Synthesis 

    E-Print Network [OSTI]

    Gomez Gualdron, Diego Armando 1983-

    2012-10-26T23:59:59.000Z

    for the creation of novel and revolutionary electronic, medical, and energy technologies. However, a major stumbling block in the exploitation of nanotube-based technologies is the lack of control of nanotube structure (chirality) during synthesis, which...

  12. Gold catalyzed growth of silicon nanowires by plasma enhanced chemical vapor deposition

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    , Cambridge CB2 1EW, United Kingdom R. E. Dunin-Borkowski Department of Materials Science and Metallurgy to low-dimensional physics, and they can be used as nanotechnology building blocks to reach higher device-temperature synthesis from its phase diagram, because the Ga­Si system has a very low eutectic temperature.16 However

  13. SolGel Electrophoretic Deposition for the Growth of Oxide Nanorods**

    E-Print Network [OSTI]

    Cao, Guozhong

    ±gel processing is a wet chemical route for the synthesis and processing of inorganic and organic±inorganic hybrid materials. It is particularly useful in making complex metal oxides and temperature sensitive organic±inorganic and Guozhong Cao* 1. Introduction Metal oxides, particularly complex metal oxides, are impor- tant materials

  14. FEATURE ARTICLE Growth of Oxide Nanorod Arrays through Sol Electrophoretic Deposition

    E-Print Network [OSTI]

    Cao, Guozhong

    approaches in sol-gel processing for synthesis of inorganic or inorganic/organic hybrid materials are briefly* Department of Materials Science and Engineering, UniVersity of Washington, Seattle, Washington 98195 Recei, are impor- tant materials for various applications in industry and technol- ogy. This is due to their multi

  15. Underpotential Deposition-Mediated Layer-by-Layer Growth of Thin Films -

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron Spin TransitionProgramUndergraduate Monthly DownloadDecemberEnergy

  16. Site control technique for quantum dots using electron beam induced deposition

    SciTech Connect (OSTI)

    Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi [Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Minami-saitama, Saitama 3458501 (Japan)

    2014-05-15T23:59:59.000Z

    To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028?m at 50K by photoluminescence measurement.

  17. Journal of Crystal Growth ] (

    E-Print Network [OSTI]

    ) at high pressure of CO2 (initial PCO2 ¼ 55 bar) and moderate to high temperature (30 and 90 1C) was used and the dissolved quantity of CO2 have a significant effect on the average particle size, specific surface areaJournal of Crystal Growth ] (

  18. amyloid deposition limits: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Summary: 1 Title page. Title: Subjective cognition and amyloid deposition imaging. A PiB PET study in normal-beta (A) deposition, imaged with 11 C-Pittsburg compound B (PiB) -...

  19. alluvial fan deposits: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    P. 2006-06-21 47 unknown title CiteSeer Summary: Artificial fill (Recent)Deposits of fill resulting from human construction or mining activities; most large deposits mapped,...

  20. Deposit Deregulation and Risk Management in an Era of Transition

    E-Print Network [OSTI]

    Rosen, Kenneth T.

    1982-01-01T23:59:59.000Z

    May 1982. "Deposit Deregulation and Risk Man- May 1982.Experiment in Ad Hoc Deregulation. " Kenneth T. MutualPAPER 82-47 V DEPOSIT DEREGULATION AND R_1si< MANAGEMENT

  1. Mineral Deposit Research Unit The University of British Columbia

    E-Print Network [OSTI]

    Ollivier-Gooch, Carl

    1 Mineral Deposit Research Unit The University of British Columbia Earth Sciences Building metallogenic constraints on mineralization in poorly understood or exposed portions of Yukon and Alaska. The mineral deposit studies, models, and metallogenic frameworks developed in this project

  2. Non-stoichiometric material transfer in the pulsed laser deposition...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the pulsed laser deposition of LaAlO3. Non-stoichiometric material transfer in the pulsed laser deposition of LaAlO3. Abstract: Inequivalent angular distributions have been found...

  3. Crater ice deposits near the south pole of Mars

    E-Print Network [OSTI]

    Westbrook, Owen William

    2009-01-01T23:59:59.000Z

    Layered deposits atop both Martian poles are thought to preserve a record of past climatic conditions in up to three km of water ice and dust. Just beyond the extent of these south polar layered deposits (SPLD), dozens of ...

  4. All graphene electromechanical switch fabricated by chemical vapor deposition

    E-Print Network [OSTI]

    Milaninia, Kaveh M.

    We demonstrate an electromechanical switch comprising two polycrystalline graphene films; each deposited using ambient pressure chemical vapor deposition. The top film is pulled into electrical contact with the bottom film ...

  5. Wellbore Heat Transfer Model for Wax Deposition in Permafrost Region

    E-Print Network [OSTI]

    Cui, Xiaoting

    2012-05-31T23:59:59.000Z

    Producing waxy oil in arctic area may cause wax deposited on the well wall. Since wax deposition is strongly thermal related, accurate heat transfer model is necessary in predicting and preventing wax depostion. A mathematical model was derived...

  6. adjusted deposit insurance: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of international illiquidity on domestic banking crises. The Recent Deposit Insurance Reform in the U.S. raised the coverage limit for certain types of deposits. In chapter II, I...

  7. Geochemical and sedimentological investigations of Youngest Toba Tuff ashfall deposits

    E-Print Network [OSTI]

    Gatti, Emma

    2013-03-12T23:59:59.000Z

    sedimentological structures and geometry ...................................................... 90 5.5 Discussion .......................................................................................................................... 91 5.5.1 The local... ..................................................... 97 5.6 Conclusion ......................................................................................................................... 97 CHAPTER 6. DEPOSITIONAL PROCESSES AND SEDIMENTOLOGY OF YTT DEPOSITS IN THE LENGGONG VALLEY, MALAYSIA...

  8. On the possibility to grow zinc oxide-based transparent conducting oxide films by hot-wire chemical vapor deposition

    SciTech Connect (OSTI)

    Abrutis, Adulfas, E-mail: adulfas.abrutis@chf.vu.lt; Silimavicus, Laimis; Kubilius, Virgaudas; Murauskas, Tomas; Saltyte, Zita; Kuprenaite, Sabina; Plausinaitiene, Valentina [Faculty of Chemistry, Vilnius University, Naugarduko 24, LT-03225 Vilnius (Lithuania)

    2014-03-15T23:59:59.000Z

    Hot-wire chemical vapor deposition (HW-CVD) was applied to grow zinc oxide (ZnO)-based transparent conducting oxide (TCO) films. Indium (In)-doped ZnO films were deposited using a cold wall pulsed liquid injection CVD system with three nichrome wires installed at a distance of 2?cm from the substrate holder. The wires were heated by an AC current in the range of 0–10 A. Zn and In 2,2,6,6-tetramethyl-3,5-heptanedionates dissolved in 1,2-dimethoxyethane were used as precursors. The hot wires had a marked effect on the growth rates of ZnO, In-doped ZnO, and In{sub 2}O{sub 3} films; at a current of 6–10 A, growth rates were increased by a factor of ?10–20 compared with those of traditional CVD at the same substrate temperature (400?°C). In-doped ZnO films with thickness of ?150?nm deposited on sapphire-R grown at a wire current of 9?A exhibited a resistivity of ?2?×?10{sup ?3} ?cm and transparency of >90% in the visible spectral range. These initial results reveal the potential of HW-CVD for the growth of TCOs.

  9. Nanowire growth by an electron beam induced massive phase transformation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sood, Shantanu; Kisslinger, Kim; Gouma, Perena

    2014-12-01T23:59:59.000Z

    Tungsten trioxide nanowires of a high aspect ratio have been synthesized in-situ in a TEM under an electron beam of current density 14A/cm² due to a massive polymorphic reaction. Sol-gel processed pseudocubic phase nanocrystals of tungsten trioxide were seen to rapidly transform to one dimensional monoclinic phase configurations, and this reaction was independent of the substrate on which the material was deposited. The mechanism of the self-catalyzed polymorphic transition and accompanying radical shape change is a typical characteristic of metastable to stable phase transformations in nanostructured polymorphic metal oxides. A heuristic model is used to confirm the metastable to stablemore »growth mechanism. The findings are important to the control electron beam deposition of nanowires for functional applications starting from colloidal precursors.« less

  10. Nanowire growth by an electron beam induced massive phase transformation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sood, Shantanu [State Univ., of New York, Stony Brook, NY (United States); Kisslinger, Kim [Brookhaven National Lab. (BNL), Upton, NY (United States); Gouma, Perena [State Univ., of New York, Stony Brook, NY (United States)

    2014-12-01T23:59:59.000Z

    Tungsten trioxide nanowires of a high aspect ratio have been synthesized in-situ in a TEM under an electron beam of current density 14A/cm² due to a massive polymorphic reaction. Sol-gel processed pseudocubic phase nanocrystals of tungsten trioxide were seen to rapidly transform to one dimensional monoclinic phase configurations, and this reaction was independent of the substrate on which the material was deposited. The mechanism of the self-catalyzed polymorphic transition and accompanying radical shape change is a typical characteristic of metastable to stable phase transformations in nanostructured polymorphic metal oxides. A heuristic model is used to confirm the metastable to stable growth mechanism. The findings are important to the control electron beam deposition of nanowires for functional applications starting from colloidal precursors.

  11. angle deposited nano-rough: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials Science Websites Summary: the deposition angle, deposition rate, ro- tation speed, and material specific parameters such as surface deposition T. Karabacak,a) G.-C....

  12. Optical properties of chemical-vapor-deposited diamond films

    SciTech Connect (OSTI)

    Bi, X.X.; Eklund, P.C.; Zhang, J.G.; Rao, A.M. (Department of Physics and Astronomy, University of Kentucky, Lexington, KY (USA)); Perry, T.A.; Beetz, C.P. Jr. (Physics Department, General Motors Research Laboratory, Warren, MI (USA))

    1990-04-01T23:59:59.000Z

    Results of room-temperature optical studies on {similar to}10 micron thick, free-standing diamond films are reported. The films were grown on Si(100) substrates by hot filament-assisted chemical vapor deposition (CVD) from a methane/hydrogen mixture. The as-grown, free surface of the films exhibited a surface roughness of scale {sigma}{similar to}0.2 to 5 microns, depending on the methane/hydrogen mixture, which introduces significant optical scattering loss for frequencies greater than 0.5 eV. Specular reflection and transmission spectra in the range 0.01--10 eV were collected. Below the threshold for interband adsorption near {similar to}5 eV, the films studied behaved approximately as thin parallel plates of refractive index 2.4, with the rough free surface leading to increasingly larger loss of specular transmission/reflection with decreasing wavelength. Structure in the mid-infrared transmission spectra was observed and attributed to disorder-induced one-phonon absorption, intrinsic multi-phonon absorption, and infrared active --C--H{sub 2} stretching modes. The strength of the C--H band was observed to increase with increasing methane pressure in the growth chamber. At 5.3 eV, the onset of interband absorption was observed, in good agreement with the value of the indirect bandgap in type IIa (intrinsic) diamond.

  13. Formation of amorphous metal alloys by chemical vapor deposition

    DOE Patents [OSTI]

    Mullendore, A.W.

    1988-03-18T23:59:59.000Z

    Amorphous alloys are deposited by a process of thermal dissociation of mixtures of organometallic compounds and metalloid hydrides,e.g., transition metal carbonyl, such as nickel carbonyl and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit. 1 fig.

  14. amorphous carbon deposited: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The contamination was believed 2 NICKELHYDROGENATED AMORPHOUS CARBON COMPOSITE FILMS DEPOSITED IN ACETYLENEARGON MICROWAVE PLASMA DISCHARGE CiteSeer Summary:...

  15. Formation of amorphous metal alloys by chemical vapor deposition

    DOE Patents [OSTI]

    Mullendore, Arthur W. (Sandia Park, NM)

    1990-01-01T23:59:59.000Z

    Amorphous alloys are deposited by a process of thermal dissociation of mixtures or organometallic compounds and metalloid hydrides, e.g., transition metal carbonyl such as nickel carbonyl, and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit.

  16. Growth of GaN films with controlled out-of-plane texture on Si wafers Jung-Il Hong , Yanling Chang, Yong Ding, Zhong Lin Wang , Robert L. Snyder

    E-Print Network [OSTI]

    Wang, Zhong L.

    Growth of GaN films with controlled out-of-plane texture on Si wafers Jung-Il Hong , Yanling Chang Interface structure GaN films were deposited on Si (400) wafers by a pulsed laser deposition technique, thereby achieving polar or nonpolar film surfaces as desired. The GaN film and Si substrate were found

  17. Eco-Growth: A Framework for Sustainable Growth

    E-Print Network [OSTI]

    Blanco, Edgar E.

    Growth is imperative for corporate success and yet the environmental impact of this growth is not sustainable. In this paper we offer a framework for thinking about the stages of tackling the environmental sustainability ...

  18. RISO-M-2438 Dry deposition and resuspension of

    E-Print Network [OSTI]

    CO RISO-M-2438 2 S Dry deposition and resuspension of particulate matter in city environments N 1984 få #12;RISØ-M-2438 DRY DEPOSITION AND RESUSPENSION OF PARITUCLATE NATTER IN CITY ENVIRONMENTS N.O. Jensen Abstract. The report describes, mostly in qualitative terms, the deposition and resuspension

  19. ISSN 1745-9648 Synchronisation and Staggering of Deposit

    E-Print Network [OSTI]

    Feigon, Brooke

    Working Paper 07-14 Abstract: This study examines the frequency and form of deposit account interest rateISSN 1745-9648 Synchronisation and Staggering of Deposit Account Interest Rate Changes by John K change. Specifically, the question of whether deposit interest rate change is synchronised with other

  20. UNIVERSITY of CALIFORNIA ATOMIC LAYER DEPOSITION OF ALUMINUM OXIDE

    E-Print Network [OSTI]

    Belanger, David P.

    UNIVERSITY of CALIFORNIA SANTA CRUZ ATOMIC LAYER DEPOSITION OF ALUMINUM OXIDE A thesis submitted deposition (ALD) of aluminum oxide on crystalline silicon and anodized aluminum substrates. A homemade ALD system is used with trimethylaluminum (TMA) and water as precursors to deposit uniform aluminum oxide

  1. Electrophoretically-deposited solid film lubricants

    SciTech Connect (OSTI)

    Dugger, M.T.; Panitz, J.K.J.; Vanecek, C.W.

    1995-04-01T23:59:59.000Z

    An aqueous-based process that uses electrophoresis to attract powdered lubricant in suspension to a charged target was developed. The deposition process yields coatings with low friction, complies with environmental safety regulations, requires minimal equipment, and has several advantages over processes involving organic binders or vacuum techniques. This work focuses on development of the deposition process, includes an analysis of the friction coefficient of the material in sliding contact with stainless steel under a range of conditions, and a functional evaluation of coating performance in a precision mechanical device application. Results show that solid lubricant films with friction coefficients as low as 0.03 can be produced. A 0.03 friction coefficient is superior to solid lubricants with binder systems and is comparable to friction coefficients generated with more costly vacuum techniques.

  2. Surface acoustic wave dust deposition monitor

    DOE Patents [OSTI]

    Fasching, G.E.; Smith, N.S. Jr.

    1988-02-12T23:59:59.000Z

    A system is disclosed for using the attenuation of surface acoustic waves to monitor real time dust deposition rates on surfaces. The system includes a signal generator, a tone-burst generator/amplifier connected to a transmitting transducer for converting electrical signals into acoustic waves. These waves are transmitted through a path defining means adjacent to a layer of dust and then, in turn, transmitted to a receiving transducer for changing the attenuated acoustic wave to electrical signals. The signals representing the attenuated acoustic waves may be amplified and used in a means for analyzing the output signals to produce an output indicative of the dust deposition rates and/or values of dust in the layer. 8 figs.

  3. An atomic layer deposition reactor with dose quantification for precursor adsorption and reactivity studies

    SciTech Connect (OSTI)

    Larrabee, T. J.; Mallouk, T. E.; Allara, D. L. [Department of Chemistry, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2013-01-15T23:59:59.000Z

    An atomic layer deposition reactor has been constructed with quantitative, precision dose control for studying precursor adsorption characteristics and to relate dose quantity and exposure dynamics to fluid flow in both the viscous and molecular flow regimes. A fixed volume of gas, held at a controlled temperature and measured pressure, is dosed into the reaction chamber by computer-controlled pneumatic valves. Dual in situ quartz crystal microbalances provide parallel mass measurement onto two differently coated substrates, which allows adsorption coverage and relative sticking coefficients to be determined. Gas composition in the reaction chamber was analyzed in situ by a quadrupole mass spectrometer. Absolute reactant exposure is unambiguously calculated from the impingement flux, and is related to dose, surface area, and growth rates. A range of control over the dose amount is demonstrated and consequences for film growth control are demonstrated and proposed.

  4. Apparatus and method for photochemical vapor deposition

    DOE Patents [OSTI]

    Jackson, Scott C. (Wilmington, DE); Rocheleau, Richard E. (Wilmington, DE)

    1987-03-31T23:59:59.000Z

    A photochemical vapor deposition apparatus includes a reactor housing having a window in one wall above a reaction chamber in the housing. A transparent curtain divides the reaction chamber into a reaction zone and a flush zone. At least one substrate is mounted in the reaction zone in light communication with the window so that ultraviolet radiation may penetrate through the window into the reaction zone. The window is kept clear by a gas flowing through the flush zone.

  5. Stationary phase deposition based on onium salts

    DOE Patents [OSTI]

    Wheeler, David R. (Albuquerque, NM); Lewis, Patrick R. (Albuquerque, NM); Dirk, Shawn M. (Albuquerque, NM); Trudell, Daniel E. (Albuquerque, NM)

    2008-01-01T23:59:59.000Z

    Onium salt chemistry can be used to deposit very uniform thickness stationary phases on the wall of a gas chromatography column. In particular, the stationary phase can be bonded to non-silicon based columns, especially microfabricated metal columns. Non-silicon microfabricated columns may be manufactured and processed at a fraction of the cost of silicon-based columns. In addition, the method can be used to phase-coat conventional capillary columns or silicon-based microfabricated columns.

  6. Electrostatic force assisted deposition of graphene

    DOE Patents [OSTI]

    Liang, Xiaogan (Berkeley, CA)

    2011-11-15T23:59:59.000Z

    An embodiment of a method of depositing graphene includes bringing a stamp into contact with a substrate over a contact area. The stamp has at least a few layers of the graphene covering the contact area. An electric field is developed over the contact area. The stamp is removed from the vicinity of the substrate which leaves at least a layer of the graphene substantially covering the contact area.

  7. Ash & Pulverized Coal Deposition in Combustors & Gasifiers

    SciTech Connect (OSTI)

    Goodarz Ahmadi

    1998-12-02T23:59:59.000Z

    Further progress in achieving the objectives of the project was made in the period of July 1 to September 30, 1997. The direct numerical simulation of particle removal process in turbulent gas flows was continued. Variations of vorticity contours which are averaged over a short time duration are studied. It is shown that the near wall vortices profoundly affect the particle removal process in turbulent boundary layer flows. The sublayer model for evaluating the particle deposition in turbulent flows was extended to include the effect of particle rebound. A new more advance flow model for the near wall vortices is also used in these analysis. Sample particle trajectories are obtained and discussed. Experimental data for transport and deposition of fibrous particles in the aerosol wind tunnel was obtained. The measured deposition velocity is compared with the empirical correlation and the available data and discussed. Particle resuspension process in turbulent flows are studied. The model is compared with the experimental data. It is shown that when the effects of the near wall flow structure, as well as the surface roughness are included the model agrees with the available experimental data.

  8. Ash & Pulverized Coal Deposition in Combustors & Gasifiers

    SciTech Connect (OSTI)

    Goodarz Ahmadi

    1998-12-02T23:59:59.000Z

    Further progress in achieving the objectives of the project was made in the period of October I to December 31, 1997. The direct numerical simulation of particle removal process in turbulent gas flows was continued. Variations of vorticity contours which are averaged over a short time duration are studied. It is shown that the near wall vortices profoundly affect the particle removal process in turbulent boundary layer flows. The sublayer model for evaluating the particle deposition in turbulent flows was extended to include the effect of particle rebound. A new more advance flow model for the near wall vortices is also used in these analysis. Sample particle trajectories are obtained and discussed. Experimental data for transport and deposition of fibrous particles in the aerosol wind tunnel was obtained. The measured deposition velocity is compared with the empirical correlation and the available data and discussed. Particle resuspension process in turbulent flows are studied. The model is compared with the experimental data. It is shown that when the effects of the near wall flow structure, as well as the surface roughness are included the model agrees with the available experimental data.

  9. The stratigraphy and environment of deposition of the Wilcox lignite deposit south of Hallsville, Harrison County, Texas

    E-Print Network [OSTI]

    Watson, Joseph Quealy

    1979-01-01T23:59:59.000Z

    THE STBATIGRAPHY AND ENVIBONHENT OF DEPOSITION OF THE WILCOX LIGNITE DEPOSIT SOUTH OF HALLS'71LLE, HARRISON COUNTY, TEXAS A Thesis JOSEPH QUEALY WATSON Submitted to the Graduate College of Texas A&H University in partial fulfillment... of the requirement for the degree of MASTER OF SCIENCE August 1979 Major Subject: Geologv THE STRATIGRAPHY AND ENVIRONMENT OF DEPOSITION OF THE WILCOX LIGNITE DEPOSIT SOUTH OF H)i&LSVILLE, HARRISON COUNTY, TEXAS A Thesis by JOSEPH QUEALY WATSON Approved...

  10. Thermal chemistry of Mn{sub 2}(CO){sub 10} during deposition of thin manganese films on silicon oxide and on copper surfaces

    SciTech Connect (OSTI)

    Qin Xiangdong; Sun Huaxing; Zaera, Francisco [Department of Chemistry, University of California, Riverside, California 92521 (United States)

    2012-01-15T23:59:59.000Z

    The surface chemistry of dimanganese decacarbonyl on the native oxide of Si(100) wafers was characterized with the aid of x-ray photoelectron spectroscopy. Initial experiments in a small stainless-steel reactor identified a narrow range of temperatures, between approximately 445 and 465 K, in which the deposition of manganese could be achieved in a self-limiting fashion, as is desirable for atomic layer deposition. Deposition at higher temperatures leads to multilayer growth, but the extent of this Mn deposition reverses at even higher temperatures (about 625 K), and also ifhydrogen is added to the reaction mixture. Extensive decarbonylation takes place below room temperature, but limited C-O bond dissociation and carbon deposition are still seen after high exposures at 625 K. The films deposited at low ({approx}450 K) temperatures are mostly in the form of MnO, but at 625 K that converts to a manganese silicate, and upon higher doses a manganese silicide forms at the SiO{sub 2}/Si(100) interface as well. No metallic manganese could be deposited with this precursor on either silicon dioxide or copper surfaces.

  11. Electrochemical investigations of product deposition and dissolution of the reduced forms of alkyl viologens on glassy carbon

    SciTech Connect (OSTI)

    Engelman, E.E.

    1993-01-01T23:59:59.000Z

    The reductions of several alkyl viologens in aqueous solutions at a glassy carbon working electrode were investigated. All of the viologens studied exist as colorless dication salts (V[sup 2+]) which are easily reduced to the violet cation radical (V[sup +.]) by a one electron process. The dications can be reduced directly to the yellow-brown, quinoidal neutral species (V[sup 0]) by a two electron process, or to neutral via the cation radical by two successive one electron transfers. In the absence of sodium n-alkyl sulfates, all but one displayed reversible, diffusion-controlled electron transfers for the V[sup 2+]/V[sup +.] couple. With addition of sodium decyl, undecyl and dodecyl sulfates at concentrations below their critical micelle concentrations (cmc), the cation radical product of methyl and ethyl viologen deposits on the electrode surface. The addition of these surfactants at concentrations below their cmc's precipitated the dicationic species of butyl, benzyl, and heptyl viologens. All redox forms of the viologens are solubilized by the onset of micelles. Double potential step chronocoulometry showed the deposition mechanism to be governed by solubility product equilibria. Open-circuit rotating ring-disk electrode (OC-RRDE) voltammetric experiments revealed that two forms of deposit exist. Above the cmc, little or no deposition of neutral forms occurs as V[sup 0] is solubilized in the hydrocarbon interior of the micelles. Cyclic voltammetric investigations revealed that there are also two forms of deposit for neutral viologens. For heptyl viologen, there may be more than two forms of both the V[sup +.] and V[sup 0] deposits. Deposition of the neutral form is governed by nucleation and subsequent growth. From RRDE voltammetry lower limits of solubility of neutral viologens were estimated. OC-RRDE voltammetric experiments showed that dissolution occurred by extremely fast conproportionation reaction which caused the process to be mass-transfer controlled.

  12. Small Enterprise Growth Fund (Maine)

    Broader source: Energy.gov [DOE]

    The Small Enterprise Growth Fund is a professionally-managed venture capital fund that invests in Maine companies which demonstrate high potential for growth and public benefit. The fund has...

  13. Geometry of Valley Growth

    E-Print Network [OSTI]

    Petroff, Alexander P; Abrams, Daniel M; Lobkovsky, Alexander E; Kudrolli, Arshad; Rothman, Daniel H

    2011-01-01T23:59:59.000Z

    Although amphitheater-shaped valley heads can be cut by groundwater flows emerging from springs, recent geological evidence suggests that other processes may also produce similar features, thus confounding the interpretations of such valley heads on Earth and Mars. To better understand the origin of this topographic form we combine field observations, laboratory experiments, analysis of a high-resolution topographic map, and mathematical theory to quantitatively characterize a class of physical phenomena that produce amphitheater-shaped heads. The resulting geometric growth equation accurately predicts the shape of decimeter-wide channels in laboratory experiments, 100-meter wide valleys in Florida and Idaho, and kilometer wide valleys on Mars. We find that whenever the processes shaping a landscape favor the growth of sharply protruding features, channels develop amphitheater-shaped heads with an aspect ratio of pi.

  14. Effects of copper deposition on boiler waterside surfaces

    SciTech Connect (OSTI)

    Wangerin, M.C.; Rondum, K.D. [Ashland Chemical Co., Boonton, NJ (United States)

    1995-12-01T23:59:59.000Z

    The relative importance of metal oxide corrosion products in waterside deposits, as opposed to traditional scale-forming constituents, is discussed, and the sources of copper and copper oxide boiler deposits are reviewed. Also reviewed are explanations of some of the problems associated with the presence of deposits and especially, copper-containing deposits. These include those due to a reduction in heat transfer and tube metal overheating, as well as various corrosion mechanisms. Case histories, which illustrate certain deleterious mechanisms due to the presence of such deposition, are also presented.

  15. Graphene Monolayer Rotation on Ni(111) Facilities Bilayer Graphene Growth

    SciTech Connect (OSTI)

    Batzill M.; Sutter P.; Dahal, A.; Addou, R.

    2012-06-11T23:59:59.000Z

    Synthesis of bilayer graphene by chemical vapor deposition is of importance for graphene-based field effect devices. Here, we demonstrate that bilayer graphene preferentially grows by carbon-segregation under graphene sheets that are rotated relative to a Ni(111) substrate. Rotated graphene monolayer films can be synthesized at growth temperatures above 650 C on a Ni(111) thin-film. The segregated second graphene layer is in registry with the Ni(111) substrate and this suppresses further C-segregation, effectively self-limiting graphene formation to two layers.

  16. Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory

    E-Print Network [OSTI]

    Feenstra, Randall

    of 670 C. Following the GaN growth with typical thickness of 200 nm, the substrate temperature is lowered to 580­620 C for the InGaN deposition. GaN(000 ) was grown at 720 C, on sapphire substrates, with pre-growth nitridation of the substrate performed at 1050 C and using a low-temperature GaN buffer layer grown at 550 C

  17. Direct Observation of Aggregative Nanoparticle Growth: Kinetic...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Aggregative Nanoparticle Growth: Kinetic Modeling of the Size Distribution and Growth Rate. Direct Observation of Aggregative Nanoparticle Growth: Kinetic Modeling of the Size...

  18. Ancillary effects of selected acid deposition control policies

    SciTech Connect (OSTI)

    Moe, R.J.; Lyke, A.J.; Nesse, R.J.

    1986-08-01T23:59:59.000Z

    NAPAP is examining a number of potential ways to reduce the precursors (sulfur dioxide and nitrogen oxides) to acid deposition. However, the policies to reduce acid deposition will have other physical, biological and economic effects unrelated to acid deposition. For example, control policies that reduce sulfur dioxide emissions may also increase visibility. The effects of an acid deposition policy that are unrelated to acid deposition are referred to as ''ancillary'' effects. This reserch identifies and characterizes the principle physical and economic ancillary effects associated with acid deposition control and mitigation policies. In this study the ancillary benefits associated with four specific acid deposition policy options were investigated. The four policy options investigated are: (1) flue gas desulfurization, (2) coal blending or switching, (3) reductions in automobile emissions of NO/sub x/, and (4) lake liming. Potential ancillary benefits of each option were identified and characterized. Particular attention was paid to the literature on economic valuation of potential ancillary effects.

  19. New Crystal-Growth Methods for Producing Lattice-Matched Substrates for High-Temperature Superconductors

    SciTech Connect (OSTI)

    Boatner, L.A.

    2008-06-24T23:59:59.000Z

    This effort addressed the technical problem of identifying and growing, on a commercial scale, suitable single-crystal substrates for the subsequent deposition of epitaxial thin films of high temperature semiconductors such as GaN/AlN. The lack of suitable lattice-matched substrate materials was one of the major problem areas in the development of semiconducting devices for use at elevated temperatures as well as practical opto-electronic devices based on Al- and GaN technology. Such lattice-matched substrates are necessary in order to reduce or eliminate high concentrations of defects and dislocations in GaN/AlN and related epitaxial thin films. This effort concentrated, in particular, on the growth of single crystals of ZnO for substrate applications and it built on previous ORNL experience in the chemical vapor transport growth of large single crystals of zinc oxide. This combined expertise in the substrate growth area was further complemented by the ability of G. Eres and his collaborators to deposit thin films of GaN on the subject substrates and the overall ORNL capability for characterizing the quality of such films. The research effort consisted of research on the growth of two candidate substrate materials in conjunction with concurrent research on the growth and characterization of GaN films, i.e. the effort combined bulk crystal growth capabilities in the area of substrate production at both ORNL and the industrial partner, Commercial Crystal Growth Laboratories (CCL), Naples, Florida, with the novel thin-film deposition techniques previously developed in the ORNL SSD.

  20. Hybrid inorganic–organic superlattice structures with atomic layer deposition/molecular layer deposition

    SciTech Connect (OSTI)

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit, E-mail: maarit.karppinen@aalto.fi [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland)

    2014-01-15T23:59:59.000Z

    A combination of the atomic layer deposition (ALD) and molecular layer deposition (MLD) techniques is successfully employed to fabricate thin films incorporating superlattice structures that consist of single layers of organic molecules between thicker layers of ZnO. Diethyl zinc and water are used as precursors for the deposition of ZnO by ALD, while three different organic precursors are investigated for the MLD part: hydroquinone, 4-aminophenol and 4,4?-oxydianiline. The successful superlattice formation with all the organic precursors is verified through x-ray reflectivity studies. The effects of the interspersed organic layers/superlattice structure on the electrical and thermoelectric properties of ZnO are investigated through resistivity and Seebeck coefficient measurements at room temperature. The results suggest an increase in carrier concentration for small concentrations of organic layers, while higher concentrations seem to lead to rather large reductions in carrier concentration.

  1. A simple chemical method for deposition of electrochromic Prussian blue thin films

    SciTech Connect (OSTI)

    Demiri, Sani [Faculty of Natural Sciences and Mathematics, Ss. Cyril and Methodius University, POB 162, Arhimedova 5, 1000 Skopje, Republic of Macedonia (Macedonia, The Former Yugoslav Republic of)] [Faculty of Natural Sciences and Mathematics, Ss. Cyril and Methodius University, POB 162, Arhimedova 5, 1000 Skopje, Republic of Macedonia (Macedonia, The Former Yugoslav Republic of); Najdoski, Metodija, E-mail: metonajd@iunona.pmf.ukim.edu.mk [Faculty of Natural Sciences and Mathematics, Ss. Cyril and Methodius University, POB 162, Arhimedova 5, 1000 Skopje, Republic of Macedonia (Macedonia, The Former Yugoslav Republic of)] [Faculty of Natural Sciences and Mathematics, Ss. Cyril and Methodius University, POB 162, Arhimedova 5, 1000 Skopje, Republic of Macedonia (Macedonia, The Former Yugoslav Republic of); Velevska, Julijana [Faculty of Natural Sciences and Mathematics, Ss. Cyril and Methodius University, POB 162, Arhimedova 5, 1000 Skopje, Republic of Macedonia (Macedonia, The Former Yugoslav Republic of)] [Faculty of Natural Sciences and Mathematics, Ss. Cyril and Methodius University, POB 162, Arhimedova 5, 1000 Skopje, Republic of Macedonia (Macedonia, The Former Yugoslav Republic of)

    2011-12-15T23:59:59.000Z

    Highlights: Black-Right-Pointing-Pointer Prussian blue thin films were prepared by a simple chemical deposition method. Black-Right-Pointing-Pointer The films can be easily prepared from aqueous solution of Fe{sub 2}(SO{sub 4}){sub 3} and K{sub 4}[Fe(CN){sub 6}]. Black-Right-Pointing-Pointer The films show good electrochromic properties. Black-Right-Pointing-Pointer They change from deep blue color into green, and then back to blue and colorless. Black-Right-Pointing-Pointer The PB thin films exhibit stability and excellent reversibility. -- Abstract: This paper is about a recently developed new chemical method for deposition of Prussian blue thin films. The films are easily prepared by successive immersion of the substrates into an acidic aqueous solution of Fe{sub 2}(SO{sub 4}){sub 3} and K{sub 4}[Fe(CN){sub 6}]. It is calculated of the results from AFM analysis that the growth in the film thickness by one immersion cycle corresponds to an average increase of 6 nm. The characterization of the films with X-ray diffraction, SEM-EDS analysis and FTIR spectroscopy shows that the deposited material is amorphous hydrated Fe{sub 4}[Fe(CN){sub 6}]{sub 3}. The electrochromic properties are characterized by cyclic voltammetry and VIS spectrophotometry. The PB thin films exhibit stability and excellent reversibility, which make these films favorable for electrochromic devices.

  2. Modeling precursor diffusion and reaction of atomic layer deposition in porous structures

    SciTech Connect (OSTI)

    Keuter, Thomas, E-mail: t.keuter@fz-juelich.de; Menzler, Norbert Heribert; Mauer, Georg; Vondahlen, Frank; Vaßen, Robert; Buchkremer, Hans Peter [Forschungszentrum Jülich, Institute of Energy and Climate Research (IEK-1), 52425 Jülich (Germany)

    2015-01-01T23:59:59.000Z

    Atomic layer deposition (ALD) is a technique for depositing thin films of materials with a precise thickness control and uniformity using the self-limitation of the underlying reactions. Usually, it is difficult to predict the result of the ALD process for given external parameters, e.g., the precursor exposure time or the size of the precursor molecules. Therefore, a deeper insight into ALD by modeling the process is needed to improve process control and to achieve more economical coatings. In this paper, a detailed, microscopic approach based on the model developed by Yanguas-Gil and Elam is presented and additionally compared with the experiment. Precursor diffusion and second-order reaction kinetics are combined to identify the influence of the porous substrate's microstructural parameters and the influence of precursor properties on the coating. The thickness of the deposited film is calculated for different depths inside the porous structure in relation to the precursor exposure time, the precursor vapor pressure, and other parameters. Good agreement with experimental results was obtained for ALD zirconiumdioxide (ZrO{sub 2}) films using the precursors tetrakis(ethylmethylamido)zirconium and O{sub 2}. The derivation can be adjusted to describe other features of ALD processes, e.g., precursor and reactive site losses, different growth modes, pore size reduction, and surface diffusion.

  3. Depositional setting of the Jurassic Haynesville seismic sequence in the Apalachicola Basin, northeastern Gulf of Mexico

    SciTech Connect (OSTI)

    Dobson, L.M.; Buffler, R.T. (Univ. of Texas, Austin (USA))

    1990-05-01T23:59:59.000Z

    Seismic and well data from the northeastern Gulf of Mexico were used to define the seismic stratigraphy, geologic history, and depositional setting of the Jurassic (Kimmeridgian) Haynesville sequence in the Apalachicola basin. The data show that Haynesville clastic sedimentation updip was coeval with Haynesville carbonate deposition downdip. The regional Jurassic seismic stratigraphic framework includes, in ascending order, the Louann Salt Norphlet-Smackover, Haynesville, and Cotton Valley sequences. In the vicinity of Destin dome, wells have penetrated Haynesville sandstones, shales, and anhydrites. These clastics correlate with low amplitude, low-continuity reflections that characterize the Haynesville over a broad area updip. Similar reflections within the overlying (Tithonian-earliest Berriasian) Cotton Valley clastic sequence make seismic definition of the top Haynesville sequence boundary difficult updip. As Haynesville clastics are replaced by carbonates downdip, a high amplitude reflection marks the top of the sequence. Haynesville carbonates conformably overlie (Oxfordian) Smackover carbonates in the basin center, and the lower sequence boundary cannot be defined where disrupted by growth faults associated with early movement of the (Callovian ) Louann Salt. Sigmoid clinoforms document Haynesville shelf margin development Seismic facies also include oblique clinoforms that prograde eastward into the basin from the Southern Platform and Middle Ground Arch. No wells penetrate this facies. Mapping of the seismic facies and correlation with well data suggest a depositional setting for the Haynesville sequence in which influx of terrigenous clastics probably derived from adjacent land areas to the north and northeast filled a broad lagoon behind a carbonate shelf margin.

  4. Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

    SciTech Connect (OSTI)

    Pinto, S. R. C.; Ramos, M. M. D.; Gomes, M. J. M. [University of Minho, Centre of Physics and Physics Department, Braga 4710-057 (Portugal); Buljan, M. [Ruder Boskovic Institute, Bijenicka cesta 54, Zagreb 10000 (Croatia); Chahboun, A. [University of Minho, Centre of Physics and Physics Department, Braga 4710-057 (Portugal); Physics Department, FST Tanger, Tanger BP 416 (Morocco); Roldan, M. A.; Molina, S. I. [Departamento de Ciencia de los Materiales e Ing. Metalurgica y Q. I., Universidad de Cadiz, Cadiz (Spain); Bernstorff, S. [Sincrotrone Trieste, SS 14 km163, 5, Basovizza 34012 (Italy); Varela, M.; Pennycook, S. J. [Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Barradas, N. P.; Alves, E. [Instituto Superior Tecnico e Instituto Tecnologico e Nuclear-, EN10, Sacavem 2686-953 (Portugal)

    2012-04-01T23:59:59.000Z

    In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.

  5. Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

    SciTech Connect (OSTI)

    Pinto, S. [University of Minho, Portugal; Roldan Gutierrez, Manuel A [ORNL; Ramos, M. M.D. [University of Minho, Portugal; Gomes, M.J.M. [University of Minho, Portugal; Molina, S. I. [Universidad de Cadiz, Spain; Pennycook, Stephen J [ORNL; Varela del Arco, Maria [ORNL; Buljan, M. [R. Boskovic Institute, Zagreb, Croatia; Barradas, N. [Instituto Tecnologico e Nuclear (ITN), Lisbon, Portugal; Alves, E. [Instituto Tecnologico e Nuclear (ITN), Lisbon, Portugal; Chahboun, A. [FST Tanger, Morocco; Bernstorff, S. [Sincrotrone Trieste, Basovizza, Italy

    2012-01-01T23:59:59.000Z

    In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.

  6. Microbial and Colloidal Deposition to Solid Surfaces: Effect of Heterogeneity

    E-Print Network [OSTI]

    Chen, Gexin

    2009-01-01T23:59:59.000Z

    × g (Swing Bucket Rotor 7500 4394). The growth medium was× g (Swing Bucket Rotor 7500 4394). The growth medium was3689 g (Swing Bucket Rotor 7500 4394). The growth medium was

  7. Time resolved measurement of film growth during reactive high power pulsed magnetron sputtering (HIPIMS) of titanium nitride

    E-Print Network [OSTI]

    Mitschker, Felix; Benedikt, Jan; Maszl, Christian; von Keudell, Achim

    2013-01-01T23:59:59.000Z

    The growth rate during reactive high power pulsed magnetron sputtering (HIPIMS) of titanium nitride is measured with a temporal resolution of up to 25 us using a rotating shutter concept. According to that concept a 200 um slit is rotated in front of the substrate synchronous with the HIPIMS pulses. Thereby, the growth flux is laterally distributed over the substrate. By measuring the resulting deposition profile with profilometry and with x-ray photoelectron spectroscopy, the temporal variation of the titanium and nitrogen growth flux per pulse is deduced. The analysis reveals that film growth occurs mainly during a HIPIMS pulse, with the growth rate following the HIPIMS phases ignition, current rise, gas rarefaction, plateau and afterglow. The growth fluxes of titanium and nitrogen follow slightly different behaviors with titanium dominating at the beginning of the HIPIMS pulse and nitrogen at the end of the pulse. This is explained by the gas rarefaction effect resulting in a dense initial metal plasma and...

  8. Pulsed laser deposition of epitaxial BeO thin films on sapphire and SrTiO{sub 3}

    SciTech Connect (OSTI)

    Peltier, Thomas; Takahashi, Ryota; Lippmaa, Mikk, E-mail: mlippmaa@issp.u-tokyo.ac.jp [Institute for Solid State Physics, University of Tokyo, Chiba 277-8581 (Japan)

    2014-06-09T23:59:59.000Z

    Epitaxial beryllia thin films were grown by pulsed laser deposition on Al{sub 2}O{sub 3}(001) and SrTiO{sub 3}(111) substrates. Nearly relaxed epitaxial films were obtained on both substrates at growth temperatures of up to about 600?°C. Crystalline films with expanded lattice parameters were obtained even at room temperature. The maximum growth temperature was limited by a loss of beryllium from the film surface. The volatility of beryllium appeared to be caused by the slow oxidation kinetics at the film surface and the re-sputtering effect of high-energy Be and BeO species in the ablation plume. Time-of-flight plume composition analysis suggested that the target surface became Be metal rich at low oxygen pressures, reducing the growth rate of beryllia films.

  9. Research on fundamental aspects of inorganic vapor and particle deposition in coal-fired systems. Quarterly technical report, December 6, 1991--March 5, 1992

    SciTech Connect (OSTI)

    Rosner, D.E.

    1992-03-01T23:59:59.000Z

    In September 1990 DOE-PETC initiated at the Yale HTCRE Laboratory a systematic three-year research program directed toward providing engineers with the fundamentally-based design/optimization ``tools`` foreconomically predicting the dynamics of net deposit growth, and thermophysical properties of the resulting microparticulate deposits in coal-fired systems. The goal of our research in the area of mineral mattertransport is to advance the capability of making reliable engineering predictions of the dynamics of net deposit growth for surfaces exposed to the particle-laden products of coal combustion. To accomplish thisfor a wide variety of combustor types, coal types, and operating conditions, this capability must be based on a quantitative understanding of each of the important mechanisms of mineral matter transport, as well as the nature of the interactions between these substances and the prevailing ``fireside`` surface of deposits. This level of understanding and predictive capability could be translated into very significant cost reductions for coal-fired equipment design, development and operation. It is also expected that this research activity will not only directly benefit the ash deposition R&D community -- but also generically closely related technologies of importance to DOE (e.g. hot-gas clean-up, particulate solids handling,...).

  10. Roll-to-roll atomic layer deposition process for flexible electronics encapsulation applications

    SciTech Connect (OSTI)

    Maydannik, Philipp S., E-mail: philipp.maydannik@lut.fi; Kääriäinen, Tommi O.; Lahtinen, Kimmo; Cameron, David C. [Advanced Surface Technology Research Laboratory, Lappeenranta University of Technology, Sammonkatu 12, 50130 Mikkeli (Finland); Söderlund, Mikko; Soininen, Pekka [Beneq Oy, P.O. Box 262, 01511 Vantaa (Finland); Johansson, Petri; Kuusipalo, Jurkka [Tampere University of Technology, Paper Converting and Packaging Technology, P.O. Box 589, 33101 Tampere (Finland); Moro, Lorenza; Zeng, Xianghui [Samsung Cheil Industries, San Jose R and D Center, 2186 Bering Drive, San Jose, California 95131 (United States)

    2014-09-01T23:59:59.000Z

    At present flexible electronic devices are under extensive development and, among them, flexible organic light-emitting diode displays are the closest to a large market deployment. One of the remaining unsolved challenges is high throughput production of impermeable flexible transparent barrier layers that protect sensitive light-emitting materials against ambient moisture. The present studies deal with the adaptation of the atomic layer deposition (ALD) process to high-throughput roll-to-roll production using the spatial ALD concept. We report the development of such a process for the deposition of 20?nm thickness Al{sub 2}O{sub 3} diffusion barrier layers on 500?mm wide polymer webs. The process uses trimethylaluminum and water as precursors at a substrate temperature of 105?°C. The observation of self-limiting film growth behavior and uniformity of thickness confirms the ALD growth mechanism. Water vapor transmission rates for 20?nm Al{sub 2}O{sub 3} films deposited on polyethylene naphthalate (PEN) substrates were measured as a function of substrate residence time, that is, time of exposure of the substrate to one precursor zone. Moisture permeation levels measured at 38?°C/90% relative humidity by coulometric isostatic–isobaric method were below the detection limit of the instrument (<5?×?10{sup ?4}?g/m{sup 2} day) for films coated at web moving speed of 0.25?m/min. Measurements using the Ca test indicated water vapor transmission rates ?5?×?10{sup ?6} g/m{sup 2} day. Optical measurements on the coated web showed minimum transmission of 80% in the visible range that is the same as the original PEN substrate.

  11. Depositional environments of the Kodiak Shelf, Alaska

    E-Print Network [OSTI]

    Burbach, Stuart Peter

    1977-01-01T23:59:59.000Z

    sinall amounts of ash. Sills separa+i;g the Trough and Ba:al Trough environments and possfble shelf edge currents are responsible ror the !ow concentrations of' ash. The Local Bank Depression sedir. ;ents are glacial till cove ed by fine-grain ash... os ity. Clay Minora'logy Uoicanic Ash Deposits Sedimentary Struci;ures. DISCUSS IOI'i Tro;! qh, Iiain Bank Basal T~ough. Local Bank Denression CONCLUSIONS. SELECTED I". EFERENCES. APPENDIII I ?2 2? 17 32 35 an 41 nq 45 4B 4B Cg...

  12. EGR Cooler Deposit Analysis | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't Your Destiny:Revised Finding of98-F, Western22,EERE Solar SunShot IncubatorofHybridDeposit

  13. Effect of NH{sub 3} on the low pressure chemical vapor deposition of TiO{sub 2} film at low temperature using tetrakis(diethylamino)titanium and oxygen

    SciTech Connect (OSTI)

    Song Xuemei; Takoudis, Christos G. [Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 and Department of Bioengineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)

    2007-03-15T23:59:59.000Z

    The effect of NH{sub 3} on TiO{sub 2} film deposition using tetrakis(diethylamino)titanium (TDEAT) and O{sub 2} as source gases in a low pressure chemical vapor deposition reactor was studied at low temperatures ranging from 100 to 250 deg. C. TiO{sub 2} film is traditionally deposited at temperature above 300 deg. C using oxygen-based Ti precursors, such as titanium tetraisopropoxide. In this study, the authors demonstrate that a combination of both reactive precursors, i.e., TDEAT and NH{sub 3}, is an effective technique for TiO{sub 2} film deposition at lower temperatures, albeit with some nitrogen incorporation. It was found that films can be formed at temperatures as low as 100 deg. C when NH{sub 3} is used. At higher temperatures, the growth rate of TiO{sub 2} films deposited using NH{sub 3} is higher than that of films deposited without NH{sub 3} by up to one order of magnitude. X-ray photoelectron spectroscopy data show that NH{sub 3} enhances the formation of TiNO and TiN, and x-ray diffraction analysis shows that all as-deposited films have amorphous structure. Both x-ray photoelectron spectroscopy and secondary ion mass spectroscopy depth profiles show that nitrogen, carbon, and oxygen are uniformly distributed throughout the film. The mechanism of enhancement of growth rate using NH{sub 3} is also discussed.

  14. Growth, microstructure, and luminescent

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power AdministrationField8,Dist.NewofGeothermal Heaton Armed- Deep Vadose ZonescheduleGrowth,

  15. Approaches to identifying reservoir heterogeneity and reserve growth opportunities from subsurface data: The Oficina Formation, Budare field, Venezuela

    SciTech Connect (OSTI)

    Hamilton, D.S.; Raeuchle, S.K.; Holtz, M.H. [Bureau of Economic Geology, Austin, TX (United States)] [and others

    1997-08-01T23:59:59.000Z

    We applied an integrated geologic, geophysical, and engineering approach devised to identify heterogeneities in the subsurface that might lead to reserve growth opportunities in our analysis of the Oficina Formation at Budare field, Venezuela. The approach involves 4 key steps: (1) Determine geologic reservoir architecture; (2) Investigate trends in reservoir fluid flow; (3) Integrate fluid flow trends with reservoir architecture; and (4) Estimate original oil-in-place, residual oil saturation, and remaining mobile oil, to identify opportunities for reserve growth. There are three main oil-producing reservoirs in the Oficina Formation that were deposited in a bed-load fluvial system, an incised valley-fill, and a barrier-strandplain system. Reservoir continuity is complex because, in addition to lateral facies variability, the major Oficina depositional systems were internally subdivided by high-frequency stratigraphic surfaces. These surfaces define times of intermittent lacustrine and marine flooding events that punctuated the fluvial and marginal marine sedimentation, respectively. Syn and post depositional faulting further disrupted reservoir continuity. Trends in fluid flow established from initial fluid levels, response to recompletion workovers, and pressure depletion data demonstrated barriers to lateral and vertical fluid flow caused by a combination of reservoir facies pinchout, flooding shale markers, and the faults. Considerable reserve growth potential exists at Budare field because the reservoir units are highly compartment by the depositional heterogeneity and structural complexity. Numerous reserve growth opportunities were identified in attics updip of existing production, in untapped or incompletely drained compartments, and in field extensions.

  16. Mechanics of hydrogenated amorphous carbon deposits from electron-beam-induced deposition of a paraffin precursor

    E-Print Network [OSTI]

    , electron-energy-loss spectroscopy, Raman spectroscopy, secondary-ion-mass spectrometry, and nanoindentation approach employs the high surface energy of nanostructures. Cuenot et al.1 and Salvetat et al.2 used of hydrocarbon near the area where the EBID deposits were made. High-resolution transmission electron microscopy

  17. Fatigue properties of atomic-layer-deposited alumina ultra-barriers and their implications for the reliability of flexible organic electronics

    SciTech Connect (OSTI)

    Baumert, E. K.; Pierron, O. N. [G.W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States)

    2012-12-17T23:59:59.000Z

    The fatigue degradation properties of atomic-layer-deposited alumina, with thickness ranging from 4.2 to 50 nm, were investigated using a silicon micro-resonator on which the coatings were deposited and strained in a static or cyclic manner, with strain amplitudes up to 2.2%, in controlled environments. Based on the measured resonant frequency evolution, post-test scanning electron microscopy observations, and finite element models, it is shown that cracks in the alumina nucleate and propagate under cyclic loading, and that the crack growth rates scale with the strain energy release rates for crack channeling. The implications for the reliability of flexible electronics are discussed.

  18. Nanostructure templating using low temperature atomic layer deposition

    DOE Patents [OSTI]

    Grubbs, Robert K. (Albuquerque, NM); Bogart, Gregory R. (Corrales, NM); Rogers, John A. (Champaign, IL)

    2011-12-20T23:59:59.000Z

    Methods are described for making nanostructures that are mechanically, chemically and thermally stable at desired elevated temperatures, from nanostructure templates having a stability temperature that is less than the desired elevated temperature. The methods comprise depositing by atomic layer deposition (ALD) structural layers that are stable at the desired elevated temperatures, onto a template employing a graded temperature deposition scheme. At least one structural layer is deposited at an initial temperature that is less than or equal to the stability temperature of the template, and subsequent depositions made at incrementally increased deposition temperatures until the desired elevated temperature stability is achieved. Nanostructure templates include three dimensional (3D) polymeric templates having features on the order of 100 nm fabricated by proximity field nanopatterning (PnP) methods.

  19. Lognormal Size Distribution Theory for Deposition of Polydisperse Aerosol Particles

    SciTech Connect (OSTI)

    Park, S.H.; Lee, K.W. [Kwangju Institute of Science and Technology (Korea, Republic of)

    2000-07-15T23:59:59.000Z

    The moments method of the lognormal size distribution theory was applied to the deposition equation of a radioactive aerosol within a liquid-metal fast breeder reactor for analysis of postulated accidents. The deposition coefficient of Crump and Seinfeld was utilized to represent the Brownian and turbulent diffusions and the gravitational sedimentation. The deposition equation was converted into a set of three ordinary differential equations. This approach takes the view point that the size distribution of an aerosol is represented by a time-dependent lognormal size distribution function during the deposition process. Numerical calculations have been performed, and the results were found to be in good agreement with the exact solution. The derived model for aerosol deposition is convenient to use in a numerical general dynamic equation solution routine based on the moments method, where nucleation, condensation, coagulation, and deposition need to be solved simultaneously.

  20. Geology of Superior Ridge uranium deposits, Ventura County, California

    SciTech Connect (OSTI)

    Dickinson, K.A.; Leventhal, J.S.

    1988-03-01T23:59:59.000Z

    Epigenetic uranium deposits with potential commercial value have been found in the lower part of the upper Eocene to lower Miocene Sespe Formation near Ojai, in Ventura County, California. This report describes the geological and geochemical setting of these deposits and postulates a model for their origin. Several uranium deposits are located on Superior Ridge, a topographic high about 3 miles long located just south of White Ledge Peak and 6 to 9 miles west of Ojai (Photo 1). A single uranium deposit on Laguna Ridge is located about 3 miles south of Superior Ridge, and was included with the Superior Ridge deposits in the White Ledge Peak district. A few small deposits are known to exist in other parts of Ventura County. A preliminary model for uranium mineralization in the Sespe Formation postulated that the organic material necessary for concentrating the uranium by chemical reduction or precipitation originated as terrestrial humic acid or humate.

  1. Experimental formation of massive hydrate deposits from accumulation of CH4 gas bubbles within synthetic and natural sediments

    SciTech Connect (OSTI)

    Madden, Megan Elwood [ORNL; Szymcek, Phillip [ORNL; Ulrich, Shannon M [ORNL; McCallum, Scott D [ORNL; Phelps, Tommy Joe [ORNL

    2009-01-01T23:59:59.000Z

    In order for methane to be economically produced from the seafloor, prediction and detection of massive hydrate deposits will be necessary. In many cases, hydrate samples recovered from seafloor sediments appear as veins or nodules, suggesting that there are strong geologic controls on where hydrate is likely to accumulate. Experiments have been conducted examining massive hydrate accumulation from methane gas bubbles within natural and synthetic sediments in a large volume pressure vessels through temperature and pressure data, as well as visual observations. Observations of hydrate growth suggest that accumulation of gas bubbles within void spaces and at sediment interfaces likely results in the formation of massive hydrate deposits. Methane hydrate was first observed as a thin film forming at the gas/water interface of methane bubbles trapped within sediment void spaces. As bubbles accumulated, massive hydrate growth occurred. These experiments suggest that in systems containing free methane gas, bubble pathways and accumulation points likely control the location and habit of massive hydrate deposits.

  2. Reduction of particle deposition on substrates using temperature gradient control

    DOE Patents [OSTI]

    Rader, Daniel J. (Albuquerque, NM); Dykhuizen, Ronald C. (Albuquerque, NM); Geller, Anthony S. (Albuquerque, NM)

    2000-01-01T23:59:59.000Z

    A method of reducing particle deposition during the fabrication of microelectronic circuitry is presented. Reduction of particle deposition is accomplished by controlling the relative temperatures of various parts of the deposition system so that a large temperature gradient near the surface on which fabrication is taking place exists. This temperature gradient acts to repel particles from that surface, thereby producing cleaner surfaces, and thus obtaining higher yields from a given microelectronic fabrication process.

  3. Deposition method for producing silicon carbide high-temperature semiconductors

    DOE Patents [OSTI]

    Hsu, George C. (La Crescenta, CA); Rohatgi, Naresh K. (W. Corine, CA)

    1987-01-01T23:59:59.000Z

    An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

  4. Influence of substrate material, orientation, and surface termination on GaN nanowire growth

    SciTech Connect (OSTI)

    Schuster, Fabian, E-mail: Fabian.Schuster@wsi.tum.de; Weiszer, Saskia; Hetzl, Martin; Winnerl, Andrea; Garrido, Jose A.; Stutzmann, Martin [Walter Schottky Institut and Physics Department, Technische Universität München, Am Coulombwall 4, 85748 Garching (Germany)

    2014-08-07T23:59:59.000Z

    In this work, we investigate the fundamental role of the substrate material, surface orientation, and termination on GaN nanowire (NW) nucleation and growth. First of all, the use of a patterned a-Si/diamond substrate confirms that NW shape and dimension are mainly determined by the applied growth conditions instead of the nature of the substrate. More important is the surface orientation as it defines growth direction and epitaxial relationship towards the GaN NWs, where both (111) and (100) surfaces yield NW growth for equivalent growth conditions. (110) substrates are found to be not suited for NW growth. Finally, the surface termination of diamond is demonstrated to survive the employed growth conditions and, therefore, to affect the nucleation of nanowires and the electronic properties of the heterointerface by its surface dipoles. This difference in nucleation is exploited as an alternative approach for selective area growth without deposition of a foreign mask material, which might also be transferable to other substrates.

  5. Research on fundamental aspects of inorganic vapor and particle deposition in coal-fired systems. Eighth quarterly technical progress report, June 6, 1992--September 5, 1992

    SciTech Connect (OSTI)

    Rosner, D.E.

    1992-09-01T23:59:59.000Z

    In September 1990 DOE-PETC initiated at the Yale HTCRE Laboratory a systematic three-year research program directed toward providing engineers with the fundamentally-based design/optimization `tools` for economically predicting the dynamics of net deposit growth*, and thermophysical properties of the resulting microparticulate deposits in coal-fired systems. In light of the theoretical `program` based on the notion of ``self-regulation`` set forth in Rosner and Nagarajan (1987), this Task includes investigation of the effects of particle material properties and possible liquid phases on the capture properties of particulate deposits. For this purpose we exploit dynamical `many-body` computer simulation techniques. This approach will provide the required parametric dependencies (on such quantities as incident kinetic energy and angle, mechanical and thermophysical properties of the particles,{hor_ellipsis}) of a dimensionless ensemble-averaged particle capture fraction, relegating the role of direct laboratory experiment to verifying (or rejecting) some crucial features/consequences of the simulation route followed. Our ultimate goal is recommend `sticking` and `erosion` laws of mechanistic origin. The availability of such laws could dramatically increase the reliability of predicted deposition rates of inertially delivered particles, in the simultaneous presence of a condensed liquid phase within the growing particulate, deposit. Equally important, one could also rationally select conditions to avoid. troublesome deposition subject to other operational requirements.

  6. acid deposition forest: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for 400 metres height above ground level) to scale the contributions from different wind directions to total deposition at any selected receptor site 38 105USDA Forest...

  7. acidic deposition phenomenon: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for 400 metres height above ground level) to scale the contributions from different wind directions to total deposition at any selected receptor site 20 On the EPR Phenomenon...

  8. acid deposition maps: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for 400 metres height above ground level) to scale the contributions from different wind directions to total deposition at any selected receptor site 24 Application of an...

  9. acid deposition phenomena: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for 400 metres height above ground level) to scale the contributions from different wind directions to total deposition at any selected receptor site 19 Application of an...

  10. acidic deposition gradient: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for 400 metres height above ground level) to scale the contributions from different wind directions to total deposition at any selected receptor site 22 Application of an...

  11. CFD Analysis of Particle Deposition During DPF Filtration Processes...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Deposition During DPF Filtration Processes A 3-D DPF model is developed to predict thermo-physical properties during filtration processes and to quantitatively investigate...

  12. ash deposition propensities: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Environments (>3.5 km), banded iron, volcanic ashes Summary diagrams available Clastic depositional environments Harbor, David 57 Ash Dump Site Manager: EHS&RM Biology and...

  13. Deposition of dopant impurities and pulsed energy drive-in

    DOE Patents [OSTI]

    Wickboldt, Paul (Walnut Creek, CA); Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Ellingboe, Albert R. (Fremont, CA)

    1999-01-01T23:59:59.000Z

    A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

  14. Deposition of dopant impurities and pulsed energy drive-in

    DOE Patents [OSTI]

    Wickboldt, Paul (Walnut Creek, CA); Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Jose, CA); Ellingboe, Albert R. (Malahide, IE)

    2008-01-01T23:59:59.000Z

    A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

  15. arc vapor deposition: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials Science Websites Summary: applied to the deposition of thermal barrier coatings onto an airfoil substrate using a gas jet assisted) principles have become...

  16. Loan/deposit links at rural Texas banks

    E-Print Network [OSTI]

    Podolecki, Vera Burton

    1977-01-01T23:59:59.000Z

    : Agricultural Economics LOAN/DEPOSIT LINKS AT RURAL TEXAS RANKS A Thesis by VERA SURTON PODOLECKI Approved as to style and content by: fCha' an of Comm' ee) . '/ (Head' of Dep rtment) (Member ) (Membe May 1977 441'726 ABSTRACT Loan/Deposit Links... in agri- cultural lending on deposit level which in turn influences bank pro- fitability. This paper is directed towards providing the rural banker with tangible evidence of the effect of lending on deposit levels over time, and providing a...

  17. aerosol dry deposition: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    43 Drying and deposition of poly(ethylene oxide) droplets determined by Pclet number Condensed Matter (arXiv) Summary: We report results of a detailed experimental...

  18. atmospheric dry deposition: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    water vapor, and we confirm such predictions in a numerical model. There have been a number 38 Dual nitrate isotopes in dry deposition: Utility for partitioning NOx source...

  19. analysis atmospheric deposition: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mercury Deposition during the Last 270 Years: A Multidisciplinary Databases and Resources Websites Summary: Mercury (Hg) contamination of aquatic ecosystems and subsequent...

  20. atmospheric sulfur deposition: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    desert dust Paytan, Adina 8 Effects of sulfuric acid and nitrogen deposition on mineral nutrition of Picea abies (L.) Karst. Physics Websites Summary: Effects of sulfuric...

  1. ash formation deposition: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    deep-water depositional systems : the upper Miocene Upper Mount messenger formation, Taranaki Basin, New Zealand and Pliocene Repetto and Pico formations, Ventura Basin,...

  2. advanced deposition processes: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    deep-water depositional systems : the upper Miocene Upper Mount messenger formation, Taranaki Basin, New Zealand and Pliocene Repetto and Pico formations, Ventura Basin,...

  3. ash deposit formation: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    deep-water depositional systems : the upper Miocene Upper Mount messenger formation, Taranaki Basin, New Zealand and Pliocene Repetto and Pico formations, Ventura Basin,...

  4. Dendrite-Free Lithium Deposition via Self-Healing Electrostatic...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    via Self-Healing Electrostatic Shield Mechanism . Dendrite-Free Lithium Deposition via Self-Healing Electrostatic Shield Mechanism . Abstract: Lithium metal batteries are called...

  5. Remote Detection Of Quaternary Borate Deposits With Aster Satellite...

    Open Energy Info (EERE)

    Jump to: navigation, search OpenEI Reference LibraryAdd to library Conference Paper: Remote Detection Of Quaternary Borate Deposits With Aster Satellite Imagery As A Geothermal...

  6. Electroless deposition of electrodes in solid-oxide fuel cells

    SciTech Connect (OSTI)

    Murphy, M.M.; Van Herle, J.; McEvoy, A.J.; Thampi, K.R. (Ecole Polytechnique Federale de Lausanne (Switzerland). Inst. de Chimie Physique)

    1994-08-01T23:59:59.000Z

    This study demonstrates the use of electroless deposition for depositing anode and cathode electrocatalysts in solid-oxide fuel cells (SOFC). Ni, Pd, and Ag films produced by electroless deposition techniques were in intimate contact with the electrolyte yttria-stabilized zirconia, and were found to catalyze SOFC anodic and cathodic reactions. Power densities of such cells were in the range of 0.33 W/cm[sup 2] at 800 C. The operating life is low due to agglomeration of the anode and densification of the cathode. For intermediate temperature/range SOFCs electroless deposition is an alternative technique for electrode preparation, if long-term stability can be attained.

  7. Deposition of dopant impurities and pulsed energy drive-in

    DOE Patents [OSTI]

    Wickboldt, P.; Carey, P.G.; Smith, P.M.; Ellingboe, A.R.

    1999-06-29T23:59:59.000Z

    A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique is disclosed. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques. 2 figs.

  8. atmospheric deposition program: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    iron cycle, and combustion this paper. Key Words aerosol deposition, climate change, deserts Abstract Atmospheric inputs of iron sources of iron are responsible for the...

  9. atmospherically deposited radionuclides: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    iron cycle, and combustion this paper. Key Words aerosol deposition, climate change, deserts Abstract Atmospheric inputs of iron sources of iron are responsible for the...

  10. atmospheric deposition: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    iron cycle, and combustion this paper. Key Words aerosol deposition, climate change, deserts Abstract Atmospheric inputs of iron sources of iron are responsible for the...

  11. arc deposition system: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    preserve sufficient shielding that the peak power deposition everywhere in the superconduct- ing magnets requires an array of cryogenically cooled superconducting (SC) coils...

  12. al films deposited: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    sputtering. Highly oriented, crack-free, stoichiometric polycrystalline rutile TiO2 thin film; RF magnetron sputtering; Phase transition; Deposition parameter effects 1....

  13. alloy films deposited: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    memory alloy Elastic modulus Wrinkling Thermoelastic strain in a polycrystalline Fe-Pd thin film 50 High-resolution photometric optical monitoring for thin-film deposition...

  14. assessing deposition levels: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and testicular steroidogenesis Dolores J. Lamb; George M. Stancel 70 A Radon Progeny Deposition Model Nuclear Experiment (arXiv) Summary: The next generation...

  15. atmospheric deposition operational: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    WSON fraction because, despite... Bentez, Juan Manuel Gonzlez 2010-01-01 123 A Radon Progeny Deposition Model Nuclear Experiment (arXiv) Summary: The next generation...

  16. ash deposits part: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    U... Cerminara, Matteo; Valade, Sbastien; Harris, Andrew J L 2014-01-01 193 A Radon Progeny Deposition Model Nuclear Experiment (arXiv) Summary: The next generation...

  17. acid deposition impacts: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    are included in this unit. Unit Qes contains Flowery Peak Quadrangle 76 A Radon Progeny Deposition Model Nuclear Experiment (arXiv) Summary: The next generation...

  18. alluvial deposits: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    facies changes that result (more) Turner, Alexandre Marcel 2014-01-01 68 A Radon Progeny Deposition Model Nuclear Experiment (arXiv) Summary: The next generation...

  19. adriatic sea deposition: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    has decreased by the increase in temperature. Ardakanian, Reza 2013-01-01 152 A Radon Progeny Deposition Model Nuclear Experiment (arXiv) Summary: The next generation...

  20. acid deposition model: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (ii) static vulnerability assessment, (more) Holmberg, Maria 2003-01-01 9 A Radon Progeny Deposition Model Nuclear Experiment (arXiv) Summary: The next generation...

  1. alluvial deposits erzurum: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    facies changes that result (more) Turner, Alexandre Marcel 2014-01-01 68 A Radon Progeny Deposition Model Nuclear Experiment (arXiv) Summary: The next generation...

  2. atmospheric pb deposition: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    will be presented. Steinberg, Peter; The ATLAS collaboration 2014-01-01 102 A Radon Progeny Deposition Model CERN Preprints Summary: The next generation low-background...

  3. A Film Depositional Model of Permeability for Mineral Reactions...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to solid-aqueous phase reactions. Citation: Freedman VL, P Saripalli, DH Bacon, and PD Meyer.2004."A Film Depositional Model of Permeability for Mineral Reactions in Unsaturated...

  4. atmospheric deposition microbial: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mercury in the Global Atmosphere: Chemistry, deposition, and land-atmosphere interactions Environmental Management and Restoration Websites Summary: Mercury in the Global...

  5. atmospheric deposition nutrient: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mercury in the Global Atmosphere: Chemistry, deposition, and land-atmosphere interactions Environmental Management and Restoration Websites Summary: Mercury in the Global...

  6. Method for rapid, controllable growth and thickness, of epitaxial silicon films

    DOE Patents [OSTI]

    Wang, Qi (Littleton, CO); Stradins, Paul (Golden, CO); Teplin, Charles (Boulder, CO); Branz, Howard M. (Boulder, CO)

    2009-10-13T23:59:59.000Z

    A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

  7. Method and apparatus for electrospark deposition

    DOE Patents [OSTI]

    Bailey, Jeffrey A.; Johnson, Roger N.; Park, Walter R.; Munley, John T.

    2004-12-28T23:59:59.000Z

    A method and apparatus for controlling electrospark deposition (ESD) comprises using electrical variable waveforms from the ESD process as a feedback parameter. The method comprises measuring a plurality of peak amplitudes from a series of electrical energy pulses delivered to an electrode tip. The maximum peak value from among the plurality of peak amplitudes correlates to the contact force between the electrode tip and a workpiece. The method further comprises comparing the maximum peak value to a set point to determine an offset and optimizing the contact force according to the value of the offset. The apparatus comprises an electrode tip connected to an electrical energy wave generator and an electrical signal sensor, which connects to a high-speed data acquisition card. An actuator provides relative motion between the electrode tip and a workpiece by receiving a feedback drive signal from a processor that is operably connected to the actuator and the high-speed data acquisition card.

  8. Atomic Layer Deposition for SRF Cavities

    SciTech Connect (OSTI)

    Norem, J; Pellin, M J; Antoine, C Z; Ciovati, G; Kneisel, P; Reece, C E; Rimmer, R A; Cooley, L; Gurevich, A V; Ha, Y; Proslier, Th

    2009-05-01T23:59:59.000Z

    We have begun using Atomic Layer Deposition (ALD) to synthesize a variety of surface coatings on coupons and cavities as part of an effort to produce rf structures with significantly better performance and yield than those obtained from bulk niobium, The ALD process offers the possibility of conformally coating complex cavity shapes with precise layered structures with tightly constrained morphology and chemical properties. Our program looks both at the metallurgy and superconducting properties of these coatings, and also their performance in working structures. Initial results include: 1) evidence from point contact tunneling showing magnetic oxides can be a significant limitation to high gradient operation, 2) experimental results showing the production sharp niobium/oxide interfaces from a high temperature bake of ALD coated Al2O3 on niobium surfaces, 3) results from ALD coated structures.

  9. Atomic Layer Deposition for SRF Cavities

    SciTech Connect (OSTI)

    Proslier, Th.; Ha, Y.; Zasadzinski, J.; /IIT, Chicago; Ciovati, G.; Kneissel, P.; Reece, C.; Rimmer, R.; /Jefferson Lab; Gurevich, A.; /Natl. High Mag. Field Lab.; Cooley, L.; Wu, G.; /Fermilab; Pellin, M.; /Argonne

    2009-05-01T23:59:59.000Z

    We have begun using Atomic Layer Deposition (ALD) to synthesize a variety of surface coatings on coupons and cavities as part of an effort to produce rf structures with significantly better performance and yield than those obtained from bulk niobium, The ALD process offers the possibility of conformally coating complex cavity shapes with precise layered structures with tightly constrained morphology and chemical properties. Our program looks both at the metallurgy and superconducting properties of these coatings, and also their performance in working structures. Initial results include: (1) results from ALD coated cavities and coupons, (2) new evidence from point contact tunneling (PCT) showing magnetic oxides can be a significant limitation to high gradient operation, (3) a study of high pressure rinsing damage on niobium samples.

  10. Electro-deposition of superconductor oxide films

    DOE Patents [OSTI]

    Bhattacharya, Raghu N. (Littleton, CO)

    2001-01-01T23:59:59.000Z

    Methods for preparing high quality superconducting oxide precursors which are well suited for further oxidation and annealing to form superconducting oxide films. The method comprises forming a multilayered superconducting precursor on a substrate by providing an electrodeposition bath comprising an electrolyte medium and a substrate electrode, and providing to the bath a plurality of precursor metal salts which are capable of exhibiting superconducting properties upon subsequent treatment. The superconducting precursor is then formed by electrodepositing a first electrodeposited (ED) layer onto the substrate electrode, followed by depositing a layer of silver onto the first electrodeposited (ED) layer, and then electrodepositing a second electrodeposited (ED) layer onto the Ag layer. The multilayered superconducting precursor is suitable for oxidation at a sufficient annealing temperature in air or an oxygen-containing atmosphere to form a crystalline superconducting oxide film.

  11. Pumping carbon out of underground coal deposits

    SciTech Connect (OSTI)

    Steinberg, M.

    1999-07-01T23:59:59.000Z

    Thin steam and deep coal deposits are difficult and costly to mine. Underground coal gasification (UCG) with air or oxygen was thought to alleviate this problem. Experimental field tests were conducted in Wyoming and Illinois. Problems were encountered concerning a clear path for the team gasification to take place and removal of gas. The high endothermic heat of reaction requiring large quantities of steam and oxygen makes the process expensive. Safety problems due to incomplete reaction is also of concern. A new approach is proposed which can remedy most of these drawbacks for extracting energy from underground coal deposits. It is proposed to hydrogasify the coal underground with a heated hydrogen gas stream under pressure to produce a methane-rich gas effluent stream. The hydrogasification of coal is essentially exothermic so that no steam or oxygen is required. The gases formed are always in a reducing atmosphere making the process safe. The hydrogen is obtained by thermally decomposing the effluent methane above ground to elemental carbon and hydrogen. The hydrogen is returned underground for further hydrogasification of the coal seam. The small amount of oxygen and sulfur in the coal can be processed out above ground by removal as water and H{sub 2}S. Any CO can be removed by a methanation step returning the methane to process. The ash remains in the ground and the elemental carbon produced is the purest form of coal. The particulate carbon can be slurried with water to produce a fuel stream that can be fed to a turbine for efficient combined cycle power plants with lower CO{sub 2} emissions. Coal cannot be used for combined cycle because of its ash and sulfur content destroys the gas turbine. Depending on its composition of coal seam some excess hydrogen is also produced. Hydrogen is, thus, used to pump pure carbon out of the ground.

  12. Energetic condensation growth of Nb thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Krishnan, M.; Valderrama, E.; James, C.; Zhao, X.; Spradlin, J.; Feliciano, A-M Valente; Phillips, L.; Reece, C. E.; Seo, K.; Sung, Z. H.

    2012-03-01T23:59:59.000Z

    This paper describes energetic condensation growth of Nb films using a cathodic arc plasma, whose 60–120 eV ions penetrate a few monolayers into the substrate and enable sufficient surface mobility to ensure that the lowest energy state (crystalline structure with minimal defects) is accessible to the film. Heteroepitaxial films of Nb were grown on ?-plane sapphire and MgO crystals with good superconducting properties and crystal size (10??mm × 20??mm ) limited only by substrate size. The substrates were heated to temperatures of up to 700°C and coated at 125°C, 300°C, 500°C, and 700°C . Film thickness was varied from ?0.25???m to >3???m . Residual resistivity ratio (RRR) values (up to a record (RRR)=587 on MgO and (RRR)=328 on ?-sapphire) depend strongly on substrate annealing and deposition temperatures. X-ray diffraction spectra and pole figures reveal that RRR increases as the crystal structure of the Nb film becomes more ordered, consistent with fewer defects and, hence, longer electron mean-free path. A transition from Nb(110) to Nb(100) orientation on the MgO(100) lattice occurs at higher temperatures. This transition is discussed in light of substrate heating and energetic condensation physics. Electron backscattered diffraction and scanning electron microscope images complement the XRD data.

  13. Epitaxial Growth of InGaN Nanowire Arrays for Light Emitting Diodes

    E-Print Network [OSTI]

    Yang, Peidong

    from the substrate. Ni/Au (20 nm / 20 nm) contacts were deposited on the p-GaN substrate in a geometryS1 Epitaxial Growth of InGaN Nanowire Arrays for Light Emitting Diodes Christopher Hahn, Zhaoyu. The straight line represents the Vegard's law correlation between GaN (c = 5.188 Å) and InN (c = 5.709 Å). (b

  14. Noncrystallographic calcite dendrites from hot-spring deposits at Lake Bogoria, Kenya

    SciTech Connect (OSTI)

    Jones, B. [Univ. of Alberta, Edmonton, Alberta (Canada). Dept. of Geology; Renaut, R.W. [Univ. of Saskatchewan, Saskatoon (Canada). Dept. of Geological Sciences

    1995-01-02T23:59:59.000Z

    Complex calcite crystals are an integral component of precipitates that form around the orifices of the Loburu and Mawe Moto hot springs on the shores of Lake bogoria, Kenya. Two types of large (up to 4 cm long) noncrystallographic dendrites are important components of these deposits. Feather dendrites are characterized by multiple levels of branching with individual branches developed through crystal splitting and spherulitic growth. Scandulitic (from Latin meaning shingle) dendrites are formed of stacked calcite crystals and are generally more compact than feather dendrites. These developed through the incremental stacking of rectangular-shaped calcite crystals that initially grew as skeletal crystals. Feather and scandulitic dendrites precipitated from the same waters in the same springs. The difference in morphology is therefore related to microenvironments in which they grew. Feather dendrites grew in any direction in pools of free-standing water provided that they were in constant contact with the solute. Conversely, scandulitic dendrites grew on rims of dams where water flowed over the surface in concert with the pulses of spring water. Thus, each calcite crystal in these dendrites represents one episode of crystal growth. The orientation of the component crystals in scandulitic dendrites is controlled by the topography of the dam or surface, not crystallographic criteria. The noncrystallographic dendrites formed from spring waters with initial temperatures of 90--99 C. Surficial water cooling, loss of CO{sub 2}, and presence of other elements that can interfere with crystal growth contributed to the formation of these unusual crystals.

  15. Graphene chemical vapor deposition at very low pressure: The impact of substrate surface self-diffusion in domain shape

    SciTech Connect (OSTI)

    Cunha, T. H. R.; Ek-Weis, J.; Lacerda, R. G.; Ferlauto, A. S., E-mail: ferlauto@fisica.ufmg.br [Department of Physics, Federal University of Minas Gerais, Belo Horizonte 31270-901 (Brazil)

    2014-08-18T23:59:59.000Z

    The initial stages of graphene chemical vapor deposition at very low pressures (<10{sup ?5?}Torr) were investigated. The growth of large graphene domains (?up to 100??m) at very high rates (up to 3??m{sup 2} s{sup ?1}) has been achieved in a cold-wall reactor using a liquid carbon precursor. For high temperature growth (>900?°C), graphene grain shape and symmetry were found to depend on the underlying symmetry of the Cu crystal, whereas for lower temperatures (<900?°C), mostly rounded grains are observed. The temperature dependence of graphene nucleation density was determined, displaying two thermally activated regimes, with activation energy values of 6?±?1?eV for temperatures ranging from 900?°C to 960?°C and 9?±?1?eV for temperatures above 960?°C. The comparison of such dependence with the temperature dependence of Cu surface self-diffusion suggests that graphene growth at high temperatures and low pressures is strongly influenced by copper surface rearrangement. We propose a model that incorporates Cu surface self-diffusion as an essential process to explain the orientation correlation between graphene and Cu crystals, and which can clarify the difference generally observed between graphene domain shapes in atmospheric-pressure and low-pressure chemical vapor deposition.

  16. Electrochromic Devices Deposited on Low-Temperature Plastics by Plasma-Enhanced Chemical Vapor Deposition

    SciTech Connect (OSTI)

    Robbins, Joshua; Seman, Michael

    2005-09-20T23:59:59.000Z

    Electrochromic windows have been identified by the Basic energy Sciences Advisory committee as an important technology for the reduction of energy spent on heating and cooling in residential and commercial buildings. Electrochromic devices have the ability to reversibly alter their optical properties in response to a small electric field. By blocking ultraviolet and infrared radiation, while modulating the incoming visible radiation, electrochromics could reduce energy consumption by several Quads per year. This amounts to several percent of the total annual national energy expenditures. The purpose of this project was to demonstrate proof of concept for using plasma-enhanced chemical vapor deposition (PECVD) for depositing all five layers necessary for full electrochromic devices, as an alternative to sputtering techniques. The overall goal is to produce electrochromic devices on flexible polymer substrates using PECVD to significantly reduce the cost of the final product. We have successfully deposited all of the films necessary for a complete electrochromic devices using PECVD. The electrochromic layer, WO3, displayed excellent change in visible transmission with good switching times. The storage layer, V2O5, exhibited a high storage capacity and good clear state transmission. The electrolyte, Ta2O5, was shown to functional with good electrical resistivity to go along with the ability to transfer Li ions. There were issues with leakage over larger areas, which can be address with further process development. We developed a process to deposit ZnO:Ga with a sheet resistance of < 50 W/sq. with > 90% transmission. Although we were not able to deposit on polymers due to the temperatures required in combination with the inverted position of our substrates. Two types of full devices were produced. Devices with Ta2O5 were shown to be functional using small aluminum dots as the top contact. The polymer electrolyte devices were shown to have a clear state transmission of 69% and a darkened state transmission 11%. These un-optimized devices compared well with commercially available products, which have a stated clear transmission of 59% and dark transmission of 4%. The PECVD oxides have displayed advantages over films produced by sputtering. The first advantage is that deposition rates were significantly higher than typical sputtering rates. Rates of 100 nm/min were achieved for WO3, and rates of 50 nm/min produced quality V2O5 and Ta2O5 films. Faster rates will produce a significant reduction in cost due to higher throughput. Another advantage was that films were less dense than those produced by sputtering as reported in the literature. This leads to high diffusion coefficients and fast switching times. Also less dense films have been shown to produce larger contrast ratios in WO3 and larger storage capacity in V2O5. From the data collected in this category 1 project we have shown that PECVD is feasible and beneficial for the deposition of working layers for electrochromic devices. These results and the lessons learned can be applied toward deposition on polymers and equipment scale-up in future work.

  17. Barrier performance optimization of atomic layer deposited diffusion barriers for organic light emitting diodes using x-ray reflectivity investigations

    SciTech Connect (OSTI)

    Singh, Aarti, E-mail: aarti.singh@namlab.com; Schröder, Uwe [Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany)] [Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany); Klumbies, Hannes; Müller-Meskamp, Lars; Leo, Karl [Dresden Innovation Center Energy Efficiency, Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden (Germany)] [Dresden Innovation Center Energy Efficiency, Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden (Germany); Geidel, Marion; Knaut, Martin; Hoßbach, Christoph; Albert, Matthias [Institute of Semiconductor and Microsystems Technology, Technische Universität Dresden, 01187 Dresden (Germany)] [Institute of Semiconductor and Microsystems Technology, Technische Universität Dresden, 01187 Dresden (Germany); Mikolajick, Thomas [Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany) [Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany); Institute of Semiconductor and Microsystems Technology, Technische Universität Dresden, 01187 Dresden (Germany)

    2013-12-02T23:59:59.000Z

    The importance of O{sub 3} pulse duration for encapsulation of organic light emitting diodes (OLEDs) with ultra thin inorganic atomic layer deposited Al{sub 2}O{sub 3} layers is demonstrated for deposition temperatures of 50 °C. X-ray reflectivity (XRR) measurements show that O{sub 3} pulse durations longer than 15?s produce dense and thin Al{sub 2}O{sub 3} layers. Correspondingly, black spot growth is not observed in OLEDs encapsulated with such layers during 91 days of aging under ambient conditions. This implies that XRR can be used as a tool for process optimization of OLED encapsulation layers leading to devices with long lifetimes.

  18. Research on thermophoretic and inertial aspects of ash particle deposition on heat exchanger surfaces in coal-fired equipment

    SciTech Connect (OSTI)

    Rosner, D.E.

    1990-05-01T23:59:59.000Z

    The overall goal of this research in the area of ash transport was to advance the capability of making reliable engineering predictions of the dynamics and consequences of net deposit growth for surfaces exposed to the products of coal combustion. To accomplish this for a wide variety of combustor types, coal types, and operating conditions, this capability must be based on a quantitative understanding of each of the important mechanisms of mineral matter transport, as well as the nature of the interactions between these substances and the prevailing fireside'' surface of the deposit. This level of understanding and predictive capability could ultimately be translated into very significant cost reductions for coal-fired equipment design, development and operation.

  19. Fabrication of nanostructure by physical vapor deposition with glancing angle deposition technique and its applications

    SciTech Connect (OSTI)

    Horprathum, M., E-mail: mati.horprathum@nectec.or.th; Eiamchai, P., E-mail: mati.horprathum@nectec.or.th; Patthanasettakul, V.; Limwichean, S.; Nuntawong, N.; Chindaudom, P. [Optical Thin-Film Laboratory National Electronics and Computer Technology Center, Pathumthani, 12120 (Thailand); Kaewkhao, J. [Center of Excellence in Glass Technology and Materials Science (CEGM), Nakhon Pathom Rajabhat University, Nakhon Pathom 73000 (Thailand); Chananonnawathorn, C. [Department of Physics, Faculty of Science and Technology, Thammasat University, Pathumthani, 12121 (Thailand)

    2014-09-25T23:59:59.000Z

    A nanostructural thin film is one of the highly exploiting research areas particularly in applications in sensor, photocatalytic, and solar-cell technologies. In the past two decades, the integration of glancing-angle deposition (GLAD) technique to physical vapor deposition (PVD) process has gained significant attention for well-controlled multidimensional nanomorphologies because of fast, simple, cost-effective, and mass-production capability. The performance and functional properties of the coated thin films generally depend upon their nanostructural compositions, i.e., large aspect ratio, controllable porosity, and shape. Such structural platforms make the fabricated thin films very practical for several realistic applications. We therefore present morphological and nanostructural properties of various deposited materials, which included metals, i.e., silver (Ag), and oxide compounds, i.e., tungsten oxide (WO{sub 3}), titanium dioxide (TiO{sub 2}), and indium tin oxide (ITO). Different PVD techniques based on DC magnetron sputtering and electron-beam evaporation, both with the integrated GLAD component, were discussed. We further explore engineered nanostructures which enable controls of optical, electrical, and mechanical properties. These improvements led to several practical applications in surface-enhanced Raman, smart windows, gas sensors, self-cleaning materials and transparent conductive oxides (TCO)

  20. Effect of differential subsidence in growth-faulted regions on E-log patterns and preservation potential

    SciTech Connect (OSTI)

    Edwards, M.B.

    1985-02-01T23:59:59.000Z

    Detailed electric log correlation, supplemented by cores, in the Eocene Wilcox Group and the Oligocene Frio Formation of the Texas Gulf basin contradicts a commonly held notion that changes in log character across growth faults exclusively reflect changes in environment. An invariable consequence of growth faulting is thickening of a depositional unit in the downthrown block, reflecting a greater subsidence rate. The growth ratio (downthrown or upthrown) varies from just over 1:1 to as much as 10:1. Analysis and mapping of log character indicate that the basic unit of both deposition and physical correlation is regressive coarsening-upward sequences. In Wilcox deltas, prodelta shales pass up into delta-front sandstones while in Frio barrier-bar or standplains, shelf and lower-shoreface deposits pass up into upper-shoreface sandstones. Regressive packages grade downdip in environment from delta plain and bay or lagoon to offshore marine. Growth faults had no significant surface expression and did not separate contrasting environments. A marked change in log character (e.g., from smooth to serrated) across a growth fault in a regressive shoreface sequence appears to indicate that the subsidence rate of the downthrown block exceeded a threshold value, enabling preservation of low-energy muddy layers and possibly episodic waning-flow storm deposits that were largely destroyed by fair-weather wave reworking on the upthrown block. This concept has implications both to regional stratigraphy and reservoir properties. Correlative units can abruptly change log character across growth faults, impeding correlation. Sandstones in the downthrown block may contain shale barriers to vertical fluid flow if the threshold subsidence rate was exceeded.

  1. Synthetic clay-magnetite aggregates designed for controlled deposition experiments

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    Synthetic clay-magnetite aggregates designed for controlled deposition experiments Feinberg, J M of synthetic clay-magnetite aggregates whose physical attributes can be tailored for controlled depositional orientation or oriented aggregation. Grain size distributions of magnetite in three different clay

  2. Plasma-Therm Workshop: Fundamentals of Plasma Processing (Etching & Deposition)

    E-Print Network [OSTI]

    Martin, Jan M.L.

    The workshop will focus on the fundamentals of plasma etching and deposition. Lectures will includePlasma-Therm Workshop: Fundamentals of Plasma Processing (Etching & Deposition) Nanofabrication an introduction to vacuum technology, the basics of plasma and plasma reactors and an overview of mechanisms

  3. Sulfuric acid deposition from stratospheric geoengineering with sulfate aerosols

    E-Print Network [OSTI]

    Robock, Alan

    aerosols can potentially result in an increase in acid deposition. [4] Acid rain has been studiedSulfuric acid deposition from stratospheric geoengineering with sulfate aerosols Ben Kravitz,1 Alan limit of hydration of all sulfate aerosols into sulfuric acid. For annual injection of 5 Tg of SO2

  4. Characteristics of the samples in the FNG fission deposit collection

    SciTech Connect (OSTI)

    Meadows, J.W.

    1990-12-01T23:59:59.000Z

    Information concerning the samples in the Fast Neutron Generator (FNG) Group's fission deposit collection has been assembled. This includes the physical dimensions, isotopic analyses, half-lives, alpha emission rates specific activities and deposit weights. 10 refs., 9 figs., 5 tabs.

  5. INTRODUCTION The massive sulfide deposits of southern Spain

    E-Print Network [OSTI]

    van Geen, Alexander

    INTRODUCTION The massive sulfide deposits of southern Spain and Portugal were formed about 300 Ma). Spain became a Roman province, and mining of the rich deposits of the Iberian pyrite belt for copper, California 94025 A. Palanques Instituto de Ciencias del Mar, 08039 Barcelona, Spain ABSTRACT A metal

  6. Subaqueous Explosive Eruption and Welding of Pyroclastic Deposits

    E-Print Network [OSTI]

    Busby, Cathy

    Subaqueous Explosive Eruption and Welding of Pyroclastic Deposits Peter Kokelaar and Cathy Busby fabrics indicative of welding of glass shards and pumice at temperatures >500"C. The occurrence emplacement temperature in pyroclas- tic deposits is welding. Welding is hot-state viscous deformation

  7. Chapter 6.24 Picosun Atomic Layer Deposition (ALD)

    E-Print Network [OSTI]

    Healy, Kevin Edward

    by the ALD could be used for diffusion barriers and similar applications. 2.0 Materials Controls: Source/s used in the ALD machine contains the desired metal for deposition. This metal is bonded)3 is precursors used to deposit aluminum oxide. 4.5.2 TTIP: Titanium Tetrakis Isopropoxide, which supplies Ti

  8. A Bidirectional Deposition Model of Wax Crayons Dave Rudolf

    E-Print Network [OSTI]

    Mould, David

    A Bidirectional Deposition Model of Wax Crayons Dave Rudolf dave.rudolf@usask.ca David Mould mould present a physically-inspired model of wax crayons, which synthesizes drawings from collections of user that evolves as it interacts with the paper. The amount of wax deposition is computed based on the crayon

  9. Wax Deposition and Aging in Flowlines from Irreversible Thermodynamics

    E-Print Network [OSTI]

    Firoozabadi, Abbas

    , 2007. ReVised Manuscript ReceiVed April 4, 2008 The development of waxy crude oil and some gas of the wax deposit. However, most of these models assume that the wax-oil (gel) deposit has a constant wax and the composition of the gel layer as a function of position and time. The wax-oil gel region is considered

  10. Optical analysis of the ablation processes in pulsed laser deposition

    E-Print Network [OSTI]

    Reilly, Anne

    spectral lines. #12;3 II. Introduction Pulsed laser deposition, or PLD, is a technique by which material be studied and controlled, a greater overall command of the deposition process could be achieved.2 to see very clear plumes, #12;4 significant blackbody emission, and evidence of spectral lines

  11. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    SciTech Connect (OSTI)

    Dutta, P., E-mail: pdutta2@central.uh.edu; Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V. [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204 (United States); Zheng, N.; Ahrenkiel, P. [Department of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, South Dakota 57701 (United States); Martinez, J. [Materials Evaluation Laboratory, NASA Johnson Space Center, Houston, Texas 77085 (United States)

    2014-09-01T23:59:59.000Z

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ?10{sup 7?}cm{sup ?2}. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300?cm{sup 2}/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  12. Method of and apparatus for determining deposition-point temperature

    DOE Patents [OSTI]

    Mansure, Arthur J. (Albuquerque, NM); Spates, James J. (Albuquerque, NM); Martin, Stephen J. (Albuquerque, NM)

    1998-01-01T23:59:59.000Z

    Acoustic-wave sensor apparatus and method for analyzing a normally liquid petroleum-based composition for monitoring deposition-point temperature. The apparatus includes at least one acoustic-wave device such as SAW, QCM, FPM, TSM or APM type devices in contact with the petroleum-based composition for sensing or detecting the surface temperature at which deposition occurs and/or rate of deposition as a function of temperature by sensing an accompanying change in frequency, phase shift, damping voltage or damping current of an electrical oscillator to a known calibrated condition. The acoustic wave device is actively cooled to monitor the deposition of constituents such as paraffins by determining the point at which solids from the liquid composition begin to form on the acoustic wave device. The acoustic wave device can be heated to melt or boil off the deposits to reset the monitor and the process can be repeated.

  13. Method of and apparatus for determining deposition-point temperature

    DOE Patents [OSTI]

    Mansure, A.J.; Spates, J.J.; Martin, S.J.

    1998-10-27T23:59:59.000Z

    Acoustic-wave sensor apparatus and method are disclosed for analyzing a normally liquid petroleum-based composition for monitoring deposition-point temperature. The apparatus includes at least one acoustic-wave device such as SAW, QCM, FPM, TSM or APM type devices in contact with the petroleum-based composition for sensing or detecting the surface temperature at which deposition occurs and/or rate of deposition as a function of temperature by sensing an accompanying change in frequency, phase shift, damping voltage or damping current of an electrical oscillator to a known calibrated condition. The acoustic wave device is actively cooled to monitor the deposition of constituents such as paraffins by determining the point at which solids from the liquid composition begin to form on the acoustic wave device. The acoustic wave device can be heated to melt or boil off the deposits to reset the monitor and the process can be repeated. 5 figs.

  14. COAL-FIRED UTILITY BOILERS: SOLVING ASH DEPOSITION PROBLEMS

    SciTech Connect (OSTI)

    Christopher J. Zygarlicke; Donald P. McCollor; Steven A. Benson; Jay R. Gunderson

    2001-04-01T23:59:59.000Z

    The accumulation of slagging and fouling ash deposits in utility boilers has been a source of aggravation for coal-fired boiler operators for over a century. Many new developments in analytical, modeling, and combustion testing methods in the past 20 years have made it possible to identify root causes of ash deposition. A concise and comprehensive guidelines document has been assembled for solving ash deposition as related to coal-fired utility boilers. While this report accurately captures the current state of knowledge in ash deposition, note that substantial research and development is under way to more completely understand and mitigate slagging and fouling. Thus, while comprehensive, this document carries the title ''interim,'' with the idea that future work will provide additional insight. Primary target audiences include utility operators and engineers who face plant inefficiencies and significant operational and maintenance costs that are associated with ash deposition problems. Pulverized and cyclone-fired coal boilers are addressed specifically, although many of the diagnostics and solutions apply to other boiler types. Logic diagrams, ash deposit types, and boiler symptoms of ash deposition are used to aid the user in identifying an ash deposition problem, diagnosing and verifying root causes, determining remedial measures to alleviate or eliminate the problem, and then monitoring the situation to verify that the problem has been solved. In addition to a step-by-step method for identifying and remediating ash deposition problems, this guideline document (Appendix A) provides descriptions of analytical techniques for diagnostic testing and gives extensive fundamental and practical literature references and addresses of organizations that can provide help in alleviating ash deposition problems.

  15. Two-stage epitaxial growth of vertically-aligned SnO2 nano-rods on(001) ceria

    SciTech Connect (OSTI)

    Solovyov, Vyacheslav F. [Brookhaven National Lab. (BNL), Upton, NY (United States); Wu, Li-jun [Brookhaven National Lab. (BNL), Upton, NY (United States); Rupich, Martin W. [American Superconductor, Devens, MA (United States); Sathyamurthy, Srivatsan [American Superconductor, Devens, MA (United States); Li, Xiaoping [American Superconductor, Devens, MA (United States); Li, Qiang [Brookhaven National Lab. (BNL), Upton, NY (United States)

    2014-12-01T23:59:59.000Z

    Growth of high-aspect ratio oriented tin oxide, SnO2, nano-rods is complicated by a limited choice of matching substrates. We show that a (001) cerium oxide, CeO2, surface uniquely enables epitaxial growth of tin-oxide nano-rods via a two-stage process. First, (100) oriented nano-wires coat the ceria surface by lateral growth, forming a uniaxially-textured SnO2 deposit. Second, vertical SnO2nano-rods nucleate on the deposit by homoepitaxy. We demonstrate growth of vertically oriented 1-2 ?m long nano-rods with an average diameter of ?20 nm.

  16. ORGANIC GEOCHEMISTRY, DEPOSITIONAL ENVIRONMENT AND HYDROCARBON POTENTIAL OF THE TERTIARY OIL SHALE DEPOSITS IN NW ANATOLIA, TURKEY

    E-Print Network [OSTI]

    R. Kara Gülbay; S. Korkmaz

    In this study, organic geochemical characteristics and depositional environ-ment of the Tertiary-aged oil shale deposits in Northwest Anatolia have been examined. Oil shales in all the studied areas are typically characterized by high hydrogen index and low oxygen index values. Beypazar?

  17. Crystalline Ice Growth on Pt(111) and Pd(111): Nonwetting Growth...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Crystalline Ice Growth on Pt(111) and Pd(111): Nonwetting Growth on a Hydrophobic Water Monolayer. Crystalline Ice Growth on Pt(111) and Pd(111): Nonwetting Growth on a Hydrophobic...

  18. IPAP Conference Series 1: IWN2000, Nov., 2000 1 Morphology Dependent Growth Kinetics of Ga-polar GaN(0001)

    E-Print Network [OSTI]

    Cohen, Philip I.

    IPAP Conference Series 1: IWN2000, Nov., 2000 1 Morphology Dependent Growth Kinetics of Ga-polar GaN, cohen@ece.umn.edu GaN grown on Ga polar GaN templates prepared by metal-organic vapor deposition shows to equilibrium models of the growth. The results indicate that Ga-polar GaN(0001) has a step energy of the order

  19. Photoresponse in thin films of WO{sub 3} grown by pulsed laser deposition

    SciTech Connect (OSTI)

    Roy Moulik, Samik [Unit for Nanoscience, Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Kolkata (India); ICON Analytical Equipment Pvt. Ltd., Kolkata (India); Samanta, Sudeshna; Ghosh, Barnali, E-mail: barnali@bose.res.in [Unit for Nanoscience, Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Kolkata (India)

    2014-06-09T23:59:59.000Z

    We report, the photoresponse behaviour of Tungsten trioxide (WO{sub 3}) films of different surface morphology, grown by using pulsed laser deposition (PLD). The Growth parameters for PLD were changed for two substrates SiO{sub 2}/Si (SO) and SrTiO{sub 3} (STO), such a way which, result nanocrystalline film on SO and needle like structured film on STO. The photoresponse is greatly modified in these two films because of two different surface morphologies. The nanocrystalline film (film on SO) shows distinct photocurrent (PC) ON/OFF states when light was turned on/off, the enhancement of PC is ?27%. Whereas, the film with needle like structure (film on STO) exhibits significantly enhanced persistent photocurrent even in light off condition, in this case, the enhancement of PC???50% at room temperature at lowest wavelength (??=?360?nm) at a nominal bias voltage of 0.1 V.

  20. Atmospheric pressure spatial atomic layer deposition web coating with in situ monitoring of film thickness

    SciTech Connect (OSTI)

    Yersak, Alexander S.; Lee, Yung C. [Department of Mechanical Engineering, University of Colorado at Boulder, 1045 Regent Drive, 422 UCB, Boulder, Colorado 80309-0422 (United States); Spencer, Joseph A.; Groner, Markus D., E-mail: mgroner@aldnanosolutions.com [ALD NanoSolutions, Inc., 580 Burbank Street, Unit 100, Broomfield, Colorado 80020 (United States)

    2014-01-15T23:59:59.000Z

    Spectral reflectometry was implemented as a method for in situ thickness monitoring in a spatial atomic layer deposition (ALD) system. Al{sub 2}O{sub 3} films were grown on a moving polymer web substrate at 100?°C using an atmospheric pressure ALD web coating system, with film growth of 0.11–0.13?nm/cycle. The modular coating head design and the in situ monitoring allowed for the characterization and optimization of the trimethylaluminum and water precursor exposures, purge flows, and web speed. A thickness uniformity of ±2% was achieved across the web. ALD cycle times as low as 76?ms were demonstrated with a web speed of 1?m/s and a vertical gap height of 0.5?mm. This atmospheric pressure ALD system with in situ process control demonstrates the feasibility of low-cost, high throughput roll-to-roll ALD.

  1. Pulsed laser deposition of high-quality thin films of the insulating ferromagnet EuS

    SciTech Connect (OSTI)

    Yang, Qi I., E-mail: qiyang@stanford.edu [Department of Physics, Stanford University, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Zhao, Jinfeng; Risbud, Subhash H. [Department of Chemical Engineering and Materials Science, University of California, Davis, California 95616 (United States); Zhang, Li; Dolev, Merav [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Fried, Alexander D. [Department of Physics, Stanford University, Stanford, California 94305 (United States); Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Marshall, Ann F. [Stanford Nanocharacterization Laboratory, Stanford University, Stanford, California 94305 (United States); Kapitulnik, Aharon [Department of Physics, Stanford University, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Department of Applied Physics, Stanford University, Stanford, California 94305 (United States)

    2014-02-24T23:59:59.000Z

    High-quality thin films of the ferromagnetic insulator europium(II) sulfide (EuS) were fabricated by pulsed laser deposition on Al{sub 2}O{sub 3} (0001) and Si (100) substrates. A single orientation was obtained with the [100] planes parallel to the substrates, with atomic-scale smoothness indicates a near-ideal surface topography. The films exhibit uniform ferromagnetism below 15.9?K, with a substantial component of the magnetization perpendicular to the plane of the films. Optimization of the growth condition also yielded truly insulating films with immeasurably large resistance. This combination of magnetic and electric properties opens the gate for future devices that require a true ferromagnetic insulator.

  2. Normal Growth of Range Cattle.

    E-Print Network [OSTI]

    Lush, Jay L. (Jay Laurence)

    1930-01-01T23:59:59.000Z

    of surplus stock unless home-grown supplemental feed is cheap and abundant or the price to be obtained for the cattle the following spring is much higher per pound than can be had in the fall. Fall sale also lessens the danger of over-grazing in the late... of growth. Naturally the feed supply is the first thing considered as a cause of growth and it is the cause which is usually most nearly under control. Diseases or minor differences in health are just as obvious in controlling growth as are changes...

  3. Bertrand's postulate and subgroup growth

    E-Print Network [OSTI]

    Bou-Rabee, K

    2009-01-01T23:59:59.000Z

    In this article we investigate the L^1-norm of certain functions on groups called divisibility functions. Using these functions, their connection to residual finiteness, and integration theory on profinite groups, we define the residual average of a finitely generated group. One of the main results in this article is the finiteness of residual averages on finitely generated linear groups. Whether or not the residual average is finite depends on growth rates of indices of finite index subgroups. Our results on index growth rates are analogous to results on gaps between primes, and provide a variant of the subgroup growth function, which may be of independent interest.

  4. Heteroepitaxial growth of GaN/Si (111) junctions in ammonia-free atmosphere: Charge transport, optoelectronic, and photovoltaic properties

    SciTech Connect (OSTI)

    Saron, K. M. A.; Hashim, M. R. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Penang 11800 (Malaysia); Allam, Nageh K. [Energy Materials Laboratory (EML), Department of Physics, School of Sciences and Engineering, The American University in Cairo, New Cairo 11835 (Egypt)

    2013-03-28T23:59:59.000Z

    We report the catalyst-free growth of gallium nitride (GaN) nanostructures on n-Si (111) substrates using physical vapor deposition via thermal evaporation of GaN powder at 1150 Degree-Sign C in the absence of NH{sub 3} gas. Scanning electron microscopy and energy dispersive x-ray analysis indicate that the growth rate of GaN nanostructures varies with deposition time. Photoluminescence spectra showed the suppression of the UV emission and the enhancement of the visible band emission with increasing the deposition time. The fabricated GaN nanostructures exhibited p-type behavior at the GaN/Si interface, which can be related to the diffusion of Ga into the Si substrate. The obtained lowest reflection and highest transmittance over a wide wavelength range (450-750 nm) indicate the high quality of the fabricated GaN films. Hall-effect measurements showed that all fabricated films have p-type behavior with decreasing electron concentration from 10{sup 21} to 10{sup 12} cm{sup -3} and increasing the electron mobility from 50 to 225 cm{sup 2}/V s with increasing the growth time. The fabricated solar cell based on the 1 h-deposited GaN nanostructures on n-Si (111) substrate showed a well-defined rectifying behavior with a rectification ratio larger than 8.32 Multiplication-Sign 10{sup 3} in dark. Upon illumination (30 mW/cm{sup 2}), the 1 h-deposited heterojunction solar cell device showed a conversion efficiency of 5.78%. The growth of GaN in the absence of NH{sub 3} gas has strong effect on the morphological, optical, and electrical properties and consequently on the efficiency of the solar cell devices made of such layers.

  5. Growth machine theory: a qualitative analysis

    E-Print Network [OSTI]

    Smith, Gavin Paul

    1993-01-01T23:59:59.000Z

    of land inherent in growth machine theory, does not necessarily result in a dialectic, win-lose situation. Furthermore, it is argued that the growth coalition may not always ado t a unidimensional roach to development where further growth...

  6. Concentration, size distribution, and dry deposition rate of particle-associated metals in the Los Angeles region

    E-Print Network [OSTI]

    Lim, Jeong-Hee H; Sabin, L D; Schiff, K C; Stolzenbach, K D

    2006-01-01T23:59:59.000Z

    the result of cyclical resuspension and deposition of dustNRI; Dry Deposition Velocity; Resuspension; Image Analysis;upon contact without resuspension, the deposition velocity

  7. Particle size analysis of prepared solutions and fingerprint deposits of high explosive materials

    SciTech Connect (OSTI)

    Carmack, W.J.; Hembree, P.B.

    1998-03-01T23:59:59.000Z

    The Idaho National Engineering and Environmental Laboratory (INEEL) managed and operated by Lockheed Martin Idaho Technologies Company (LMITCO) was tasked via the Federal Aviation Administration (FAA) and US Department of Energy (DOE) to conduct various studies involving the detection and measurement of explosive materials and their associated residues. This report details the results of an investigation to determine the particle size characteristics of the explosive materials used in the design, development, and testing of trace explosives detection systems. These materials, in the form of water suspensions of plastic explosives, are used to provide a quantitative means of monitoring the performance characteristics of the detection systems. The purpose of this investigation is to provide data that allows a comparison between the particles deposited using the suspension standards and the particles deposited from fingerprints. This information may support the development of quality control aids, measurement methods, or performance criteria specifications for the use of trace explosives detection systems. For this report, particle size analyses were completed on explosives standard suspensions/solutions for composition C-4, Semtex-H, and Detasheet and fingerprints for C-4, Detasheet, and pentolite. Because of the difficulty in collecting microscopic images of the particles in the suspensions from test protocol surfaces, this paper discusses the characteristics of the particles as they are found on metal, glass, and paper. The results of the particle characterization analyses indicate that the water suspensions contain particulate composed of binder materials and dissolved portions of the explosive compounds. Upon drying of the water suspensions, significant particle nucleation and growth is observed. The nucleated particulate is comparable to the particulate deposited by fingerprints.

  8. In situ analysis of ash deposits from black liquor combustion

    SciTech Connect (OSTI)

    Bernath, P. [Sandia National Labs., Livermore, CA (United States). Combustion Research Facility]|[Univ. of Toronto, Ontario (Canada); Sinquefield, S.A. [Sandia National Labs., Livermore, CA (United States). Combustion Research Facility]|[Oregon State Univ., Eugene, OR (United States); Baxter, L.L.; Sclippa, G.; Rohlfing, C. [Sandia National Labs., Livermore, CA (United States). Combustion Research Facility; Barfield, M. [Sandia National Labs., Livermore, CA (United States). Combustion Research Facility]|[Univ. of Arizona, Tucson, AZ (United States)

    1996-05-01T23:59:59.000Z

    Aerosols formed during combustion of black liquor cause a significant fire-side fouling problem in pulp mill recovery boilers. The ash deposits reduce heat transfer effectiveness, plug gas passages, and contribute to corrosion. Both vapors and condensation aerosols lead to the formation of such deposits. The high ash content of the fuel and the low dew point of the condensate salts lead to a high aerosol and vapor concentration in most boilers. In situ measurements of the chemical composition of these deposits is an important step in gaining a fundamental understanding of the deposition process. Infrared emission spectroscopy is used to characterize the composition of thin film deposits resulting from the combustion of black liquor and the deposition of submicron aerosols and vapors. New reference spectra of Na{sub 2}SO{sub 4}, K{sub 2}SO{sub 4}, Na{sub 2}CO{sub 3} and K{sub 2}CO{sub 3} pure component films were recorded and compared with the spectra of the black liquor deposit. All of the black liquor emission bands were identified using a combination of literature data and ab initio calculations. Ab initio calculations also predict the locations and intensities of bands for the alkali vapors of interest. 39 refs., 9 figs.

  9. Chemical vapor deposition thin films as biopassivation coatings and directly patternable dielectrics

    E-Print Network [OSTI]

    Pryce Lewis, Hilton G. (Hilton Gavin), 1973-

    2001-01-01T23:59:59.000Z

    Organosilicon thin films deposited by pulsed plasma-enhanced chemical vapor deposition (PPECVD) and hot-filament chemical vapor deposition (HFCVD) were investigated as potential biopassivation coatings for neural probes. ...

  10. Initiated chemical vapor deposition of polymeric thin films : mechanism and applications

    E-Print Network [OSTI]

    Chan, Kelvin, Ph. D. Massachusetts Institute of Technology

    2005-01-01T23:59:59.000Z

    Initiated chemical vapor deposition (iCVD) is a novel technique for depositing polymeric thin films. It is able to deposit thin films of application-specific polymers in one step without using any solvents. Its uniqueness ...

  11. Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide

    SciTech Connect (OSTI)

    Allen, T. G., E-mail: thomas.allen@anu.edu.au; Cuevas, A. [Research School of Engineering, Australian National University, Canberra 0200 (Australia)

    2014-07-21T23:59:59.000Z

    This paper proposes the application of gallium oxide (Ga{sub 2}O{sub 3}) thin films to crystalline silicon solar cells. Effective passivation of n- and p-type crystalline silicon surfaces has been achieved by the application of very thin Ga{sub 2}O{sub 3} films prepared by atomic layer deposition using trimethylgallium (TMGa) and ozone (O{sub 3}) as the reactants. Surface recombination velocities as low as 6.1?cm/s have been recorded with films less than 4.5?nm thick. A range of deposition parameters has been explored, with growth rates of approximately 0.2?Å/cycle providing optimum passivation. The thermal activation energy for passivation of the Si-Ga{sub 2}O{sub 3} interface has been found to be approximately 0.5?eV. Depassivation of the interface was observed for prolonged annealing at increased temperatures. The activation energy for depassivation was measured to be 1.9?eV.

  12. Optimization of ion-atomic beam source for deposition of GaN ultrathin films

    SciTech Connect (OSTI)

    Mach, Jind?ich, E-mail: mach@fme.vutbr.cz; Kolíbal, Miroslav; Zlámal, Jakub; Voborny, Stanislav; Bartošík, Miroslav; Šikola, Tomáš [Institute of Physical Engineering, Brno University of Technology, Technická 2, 616 69 Brno (Czech Republic); CEITEC BUT, Brno University of Technology, Technická 10, 61669 Brno (Czech Republic); Šamo?il, Tomáš [Institute of Physical Engineering, Brno University of Technology, Technická 2, 616 69 Brno (Czech Republic)

    2014-08-15T23:59:59.000Z

    We describe the optimization and application of an ion-atomic beam source for ion-beam-assisted deposition of ultrathin films in ultrahigh vacuum. The device combines an effusion cell and electron-impact ion beam source to produce ultra-low energy (20–200 eV) ion beams and thermal atomic beams simultaneously. The source was equipped with a focusing system of electrostatic electrodes increasing the maximum nitrogen ion current density in the beam of a diameter of ?15 mm by one order of magnitude (j ? 1000 nA/cm{sup 2}). Hence, a successful growth of GaN ultrathin films on Si(111) 7 × 7 substrate surfaces at reasonable times and temperatures significantly lower (RT, 300?°C) than in conventional metalorganic chemical vapor deposition technologies (?1000?°C) was achieved. The chemical composition of these films was characterized in situ by X-ray Photoelectron Spectroscopy and morphology ex situ using Scanning Electron Microscopy. It has been shown that the morphology of GaN layers strongly depends on the relative Ga-N bond concentration in the layers.

  13. Ultrasonically assisted deposition of colloidal crystals

    SciTech Connect (OSTI)

    Wollmann, Sabine, E-mail: sabine.wollmann@griffithuni.edu.au [Lehrstuhl für Experimentalphysik 1 and Augsburg Centre for Innovative Technologies (ACIT), Universität Augsburg, 86159 Augsburg (Germany); Centre for Quantum Dynamics, Griffith University, Brisbane 4111 (Australia); Patel, Raj B. [Centre for Quantum Dynamics, Griffith University, Brisbane 4111 (Australia); Wixforth, Achim; Krenner, Hubert J. [Lehrstuhl für Experimentalphysik 1 and Augsburg Centre for Innovative Technologies (ACIT), Universität Augsburg, 86159 Augsburg (Germany); Nanosystems Initiative Munich (NIM), Schellingstr. 4, 80779 München (Germany)

    2014-07-21T23:59:59.000Z

    Colloidal particles are a versatile physical system which have found uses across a range of applications such as the simulation of crystal kinetics, etch masks for fabrication, and the formation of photonic band-gap structures. Utilization of colloidal particles often requires a means to produce highly ordered, periodic structures. One approach is the use of surface acoustic waves (SAWs) to direct the self-assembly of colloidal particles. Previous demonstrations using standing SAWs were shown to be limited in terms of crystal size and dimensionality. Here, we report a technique to improve the spatial alignment of colloidal particles using traveling SAWs. Through control of the radio frequency power, which drives the SAW, we demonstrate enhanced quality and dimensionality of the crystal growth. We show that this technique can be applied to a range of particle sizes in the ?m-regime and may hold potential for particles in the sub-?m-regime.

  14. Continuous ultra-thin MoS{sub 2} films grown by low-temperature physical vapor deposition

    SciTech Connect (OSTI)

    Muratore, C. [Department of Chemical and Materials Engineering, University of Dayton, Dayton, Ohio 45469 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States); Hu, J. J.; Bultman, J. E.; Jespersen, M. L. [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States); University of Dayton Research Institute, Dayton, Ohio 45469 (United States); Wang, B.; Haque, M. A. [Department of Mechanical and Nuclear Engineering, Pennsylvania State University, College Park, Pennsylvania 16802 (United States); Shamberger, P. J.; McConney, M. E.; Naguy, R. D.; Voevodin, A. A. [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States)

    2014-06-30T23:59:59.000Z

    Uniform growth of pristine two dimensional (2D) materials over large areas at lower temperatures without sacrifice of their unique physical properties is a critical pre-requisite for seamless integration of next-generation van der Waals heterostructures into functional devices. This Letter describes a vapor phase growth technique for precisely controlled synthesis of continuous, uniform molecular layers of MoS{sub 2} on silicon dioxide and highly oriented pyrolitic graphite substrates of over several square centimeters at 350?°C. Synthesis of few-layer MoS{sub 2} in this ultra-high vacuum physical vapor deposition process yields materials with key optical and electronic properties identical to exfoliated layers. The films are composed of nano-scale domains with strong chemical binding between domain boundaries, allowing lift-off from the substrate and electronic transport measurements from contacts with separation on the order of centimeters.

  15. Controlled polarity of sputter-deposited aluminum nitride on metals observed by aberration corrected scanning transmission electron microscopy

    SciTech Connect (OSTI)

    Harumoto, T. [Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1-S8-6 O-okayama, Meguro-ku, Tokyo 152-8552 (Japan); Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan); Sannomiya, T.; Matsukawa, Y.; Muraishi, S.; Shi, J.; Nakamura, Y. [Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1-S8-6 O-okayama, Meguro-ku, Tokyo 152-8552 (Japan); Sawada, H. [Japan Electron Optics Laboratory (JEOL) Ltd., 3-1-2 Musashino, Akishima, Tokyo 196-8558 (Japan); Tanaka, T.; Tanishiro, Y.; Takayanagi, K. [Department of Physics, Tokyo Institute of Technology, 2-12-1-H-51 O-okayama, Meguro-ku, Tokyo 152-8551 (Japan)

    2013-02-28T23:59:59.000Z

    The polarity determination process of sputter-deposited aluminum nitride (AlN) on metals has been analyzed using aberration corrected atomic resolution scanning transmission electron microscope. Direct growth of c-axis orientated AlN on face centered cubic metals (fcc) (111) with the local epitaxy has been observed, and the polarity was determined at the AlN/metal interface. We found that the AlN polarity can be controlled by the base metal layer: N-polarity AlN grows on Pt(111) while Al-polarity AlN forms on Al(111). Based on these results, the growth mechanism of AlN on metals is discussed.

  16. Method for depositing high-quality microcrystalline semiconductor materials

    DOE Patents [OSTI]

    Guha, Subhendu (Bloomfield Hills, MI); Yang, Chi C. (Troy, MI); Yan, Baojie (Rochester Hills, MI)

    2011-03-08T23:59:59.000Z

    A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

  17. Synthesis and deposition of metal nanoparticles by gas condensation process

    SciTech Connect (OSTI)

    Maicu, Marina, E-mail: marina.maicu@fep.fraunhofer.de; Glöß, Daniel; Frach, Peter [Fraunhofer Institut für Elektronenstrahl und Plasmatechnik, FEP, Winterbergstraße 28, 01277 Dresden (Germany); Schmittgens, Ralph; Gerlach, Gerald [Institut für Festkörperelektronik, IFE, TU Dresden, Helmholtz Straße 18, 01069 Dresden (Germany); Hecker, Dominic [Fraunhofer Institut für Elektronenstrahl und Plasmatechnik, FEP, Winterbergstraße 28, 01277 Dresden, Germany and Institut für Festkörperelektronik, IFE, TU Dresden, Helmholtz Straße 18, 01069 Dresden (Germany)

    2014-03-15T23:59:59.000Z

    In this work, the synthesis of Pt and Ag nanoparticles by means of the inert gas phase condensation of sputtered atomic vapor is presented. The process parameters (power, sputtering time, and gas flow) were varied in order to study the relationship between deposition conditions and properties of the nanoparticles such as their quantity, size, and size distribution. Moreover, the gas phase condensation process can be combined with a plasma enhanced chemical vapor deposition procedure in order to deposit nanocomposite coatings consisting of metallic nanoparticles embedded in a thin film matrix material. Selected examples of application of the generated nanoparticles and nanocomposites are discussed.

  18. Bacterial Growth H. L. Smith

    E-Print Network [OSTI]

    Smith, Hal

    Bacterial Growth H. L. Smith 1 Simple Models Bacteria are the dominant form of life on the planet the concentration of the nutrient in the media (grams/liter) and N(t) de

  19. Vermont Employment Growth Incentive (Vermont)

    Broader source: Energy.gov [DOE]

    The purpose of the Employment Growth Incentive (VEGI) is to encourage job creation in Vermont by a Vermont company, a Vermont division of a company that plans to grow and expand in Vermont, a...

  20. Inequality and Growth: Why Differential Fertility Matters

    E-Print Network [OSTI]

    de la Croix, David; Doepke, Matthias

    2001-01-01T23:59:59.000Z

    Barro, Robert J. 2000. “Inequality and Growth in a Panel of1–25. Benabou, Roland. 1996. “Inequality and Growth. ” NBER1996. “Measuring Income Inequality: A New Database. ”

  1. Effects of Cesium Cations in Lithium Deposition via Self-Healing...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Cesium Cations in Lithium Deposition via Self-Healing Electrostatic Shield Mechanism. Effects of Cesium Cations in Lithium Deposition via Self-Healing Electrostatic Shield...

  2. Dendrite-Free Lithium Deposition with Self-Aligned Nanorod Structure...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Dendrite-Free Lithium Deposition with Self-Aligned Nanorod Structure. Dendrite-Free Lithium Deposition with Self-Aligned Nanorod Structure. Abstract: Suppressing lithium (Li)...

  3. CX-009549: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Vapor Transport Deposition for Thin Film III-V Photovoltaics CX(s) Applied: A9, B3.6 Date: 11/09/2012 Location(s): CX: none Offices(s): Golden Field Office

  4. Rate-dependent morphology of Li2O2 growth in Li-O2 batteries

    E-Print Network [OSTI]

    Horstmann, B; Mitchell, R; Bessler, W G; Shao-Horn, Y; Bazant, M Z

    2013-01-01T23:59:59.000Z

    Compact solid discharge products enable energy storage devices with high gravimetric and volumetric energy densities, but solid deposits on active surfaces can disturb charge transport and induce mechanical stress. In this Letter we develop a nanoscale continuum model for the growth of Li2O2 crystals in lithium-oxygen batteries with organic electrolytes, based on a theory of electrochemical non-equilibrium thermodynamics originally applied to Li-ion batteries. As in the case of lithium insertion in phase-separating LiFePO4 nanoparticles, the theory predicts a transition from complex to uniform morphologies of Li2O2 with increasing current. Discrete particle growth at low discharge rates becomes suppressed at high rates, resulting in a film of electronically insulating Li2O2 that limits cell performance. We predict that the transition between these surface growth modes occurs at current densities close to the exchange current density of the cathode reaction, consistent with experimental observations.

  5. Molecular-jet chemical vapor deposition of SiC

    SciTech Connect (OSTI)

    Lubben, D.; Jellison, G.E.; Modine, F.A.

    1995-09-01T23:59:59.000Z

    SiC films have been deposited by molecular-jet chemical vapor deposition (MJCVD) on Si(001) substrates. Methylsilane (MS) diluted in He was used as a precursor for deposition under conditions which produced a MS molecular beam with 0.365 eV translational energy. Films grown at temperatures between 1000 and 1150 C and above {approx}1200 C were single crystal as judged by electron channeling, while those grown at intermediate temperatures were polycrystalline. Films grown at lower temperatures generally had a smoother surface morphology for moderate thicknesses, although all films showed at least some degree of faceting. The best thick films, up to 4 {mu}m, were obtained for substrate temperatures of {approx}1210 C under flow conditions which produced a deposition rate of {approx}1200 {angstrom} per minute.

  6. Computational Fluid Dynamics Study of Aerosol Transport and Deposition Mechanisms

    E-Print Network [OSTI]

    Tang, Yingjie

    2012-07-16T23:59:59.000Z

    In this work, various aerosol particle transport and deposition mechanisms were studied through the computational fluid dynamics (CFD) modeling, including inertial impaction, gravitational effect, lift force, interception, and turbophoresis, within...

  7. amyloid fibrils deposited: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 1 Intermolecular Alignment in Beta 2-Microglobulin Amyloid Fibrils MIT - DSpace Summary: The deposition of amyloid-like...

  8. Fabrication of solid oxide fuel cell by electrochemical vapor deposition

    DOE Patents [OSTI]

    Brian, Riley (Willimantic, CT); Szreders, Bernard E. (Oakdale, CT)

    1989-01-01T23:59:59.000Z

    In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (approximately 1100.degree.-1300.degree. C.) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20-50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

  9. ash particle deposition: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    coal fly ash by reaction with nitrogen oxides can occur in the smokestack, but with the aging Dutta, Prabir K. 5 Particle deposition in ventilation ducts University of California...

  10. atmospheric nitrogen deposition: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    N2O5, organic nitrates and nitrate deposition of nitrogen to ecosystems can cause eutrophication, where the extra nitrogen stimulates rapid 51 CAN THE ESA ADDRESS THE THREATS OF...

  11. atmospherically deposited nitrogen: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    N2O5, organic nitrates and nitrate deposition of nitrogen to ecosystems can cause eutrophication, where the extra nitrogen stimulates rapid 51 CAN THE ESA ADDRESS THE THREATS OF...

  12. atomic vapor deposited: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    deposition onto micro- and nanopowders14 and coating of nanoparticle films15 as well as aerogel coating of porous materials that exhibit ultrahigh-aspect ratios.12,13 To date,...

  13. Electrochemical deposition of small molecules for electronic materials 

    E-Print Network [OSTI]

    Allwright, Emily Marieke

    2014-11-27T23:59:59.000Z

    The method of the deposition of films of small molecules for use in electronic applications is just as important as the molecule design itself as the film’s morphology and continuity influence the performance of the ...

  14. assisted deposition method: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    thickness channel currents,3 as well as manipulate and coalesce drops of water-in-oil emulsions.4 Many Rowat, Amy C. 339 Atomic layer deposition of lanthanum aluminum oxide...

  15. Quantifying channelized submarine depositional systems from bed to basin scale

    E-Print Network [OSTI]

    Lyons, William J., 1965-

    2004-01-01T23:59:59.000Z

    The challenges of directly observing active turbidity currents necessitates the consideration of preserved deposits for deciphering the behavior of these systems. In this thesis, I take advantage 3-D subsurface seismic ...

  16. Geology of the Florida Canyon gold deposit, Pershing County,...

    Open Energy Info (EERE)

    Nevada Jump to: navigation, search OpenEI Reference LibraryAdd to library Report: Geology of the Florida Canyon gold deposit, Pershing County, Nevada, in: Gold and Silver...

  17. Chemical vapor deposition of organosilicon and sacrificial polymer thin films

    E-Print Network [OSTI]

    Casserly, Thomas Bryan

    2005-01-01T23:59:59.000Z

    Chemical vapor deposition (CVD) produced films for a wide array of applications from a variety of organosilicon and organic precursors. The structure and properties of thin films were controlled by varying processing ...

  18. Structure and uranium deposits of the Salina Quadrangle, Utah

    SciTech Connect (OSTI)

    Williams, P.E.; Hackman, R.J.

    1983-01-01T23:59:59.000Z

    Structure contours were drawn on the base of the Dakota Sandstone, or on the base of the Tununk Member of the Mancos Shale where the Dakota is absent. The map shows uranium ore deposits and prospects. (ACR)

  19. Initiated chemical vapor deposition of functional polyacrylic thin films

    E-Print Network [OSTI]

    Mao, Yu, 1975-

    2005-01-01T23:59:59.000Z

    Initiated chemical vapor deposition (iCVD) was explored as a novel method for synthesis of functional polyacrylic thin films. The process introduces a peroxide initiator, which can be decomposed at low temperatures (<200?C) ...

  20. Precipitation scavenging, dry deposition, and resuspension. Volume 2. Proceedings

    SciTech Connect (OSTI)

    Pruppacher, H.R.; Semonin, R.G.; Slinn, W.G.N.

    1983-01-01T23:59:59.000Z

    Volume 2 of these proceedings contains papers on dry deposition and resuspension of airborne pollutants. Items within the scope of EDB have been entered separately into the data base. (ACR)

  1. SPATIALLY ORGANIZED PARYLENE NANOWIRES FABRICATED BY OBLIQUE ANGLE VAPOR DEPOSITION

    E-Print Network [OSTI]

    Demirel, Melik C.

    surfaces by functionalization through two methods: (i) electroless method of creating a porous Nickel 50-80 nm thin nickel film can be obtained by electroless deposition on the pary

  2. Spatial distribution of deposition within a patch of vegetation

    E-Print Network [OSTI]

    Zong, Lijun

    This laboratory study describes the spatial pattern of deposition observed in a patch of vegetation located at the wall of a channel. There are two sources of sediment flux to the patch: the advection of particles across ...

  3. Enabling integration of vapor-deposited polymer thin films

    E-Print Network [OSTI]

    Petruczok, Christy D. (Christy Danielle)

    2014-01-01T23:59:59.000Z

    Initiated Chemical Vapor Deposition (iCVD) is a versatile, one-step process for synthesizing conformal and functional polymer thin films on a variety of substrates. This thesis emphasizes the development of tools to further ...

  4. Enhancement of fine particle deposition to permeable sediments

    E-Print Network [OSTI]

    Fries, Jerry Stephen, 1972-

    2002-01-01T23:59:59.000Z

    Predictions of deposition rate are integral to the transport of many constituents including contaminants, organic matter, and larvae. Review of the literature demonstrates a general appreciation for the potential control ...

  5. Modeling the dynamics and depositional patterns of sandy rivers

    E-Print Network [OSTI]

    Jerolmack, Douglas J

    2006-01-01T23:59:59.000Z

    This thesis seeks to advance our understanding of the dynamic nature, spatial organization and depositional record of topography in sand-bedded rivers. I examine patterns and processes over a wide range of scales, on Earth ...

  6. Sediment distribution and depositional processes on the Carnegie Ridge 

    E-Print Network [OSTI]

    Pazmino Manrique, Nelson Andres

    2005-08-29T23:59:59.000Z

    Sediment sampling, bathymetric data, and seismic reflection profiling were used to classify sediment deposition patterns on the Carnegie Ridge. Core sampling was used to relate compositional characteristics between equivalent areas, and seismic...

  7. acid deposition assessment: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    440-200 mesh sand enclosed in pipe 2... Hasan, Syed Mir Ahmed 1964-01-01 92 A Radon Progeny Deposition Model Nuclear Experiment (arXiv) Summary: The next generation...

  8. aortic calcific deposits: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    440-200 mesh sand enclosed in pipe 2... Hasan, Syed Mir Ahmed 1964-01-01 144 A Radon Progeny Deposition Model Nuclear Experiment (arXiv) Summary: The next generation...

  9. airflow gas deposition: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    also to many other fossil groups... Fischer, A. G.; Teichert, C. 1969-01-30 150 A Radon Progeny Deposition Model Nuclear Experiment (arXiv) Summary: The next generation...

  10. ag vein deposit: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 181 A Radon Progeny Deposition Model Nuclear Experiment (arXiv) Summary: The next generation...

  11. algal wrack deposits: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    440-200 mesh sand enclosed in pipe 2... Hasan, Syed Mir Ahmed 1964-01-01 107 A Radon Progeny Deposition Model Nuclear Experiment (arXiv) Summary: The next generation...

  12. assisted deposition ibad: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    440-200 mesh sand enclosed in pipe 2... Hasan, Syed Mir Ahmed 1964-01-01 200 A Radon Progeny Deposition Model Nuclear Experiment (arXiv) Summary: The next generation...

  13. athabasca deposit: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    440-200 mesh sand enclosed in pipe 2... Hasan, Syed Mir Ahmed 1964-01-01 32 A Radon Progeny Deposition Model Nuclear Experiment (arXiv) Summary: The next generation...

  14. altered pyroclastic deposits: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    440-200 mesh sand enclosed in pipe 2... Hasan, Syed Mir Ahmed 1964-01-01 91 A Radon Progeny Deposition Model Nuclear Experiment (arXiv) Summary: The next generation...

  15. acute soil depositions: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 101 A Radon Progeny Deposition Model Nuclear Experiment (arXiv) Summary: The next generation...

  16. atmosfaerisk deposition driftsrapport: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    440-200 mesh sand enclosed in pipe 2... Hasan, Syed Mir Ahmed 1964-01-01 22 A Radon Progeny Deposition Model Nuclear Experiment (arXiv) Summary: The next generation...

  17. acidic deposition state: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    440-200 mesh sand enclosed in pipe 2... Hasan, Syed Mir Ahmed 1964-01-01 122 A Radon Progeny Deposition Model Nuclear Experiment (arXiv) Summary: The next generation...

  18. Fabrication of solid oxide fuel cell by electrochemical vapor deposition

    DOE Patents [OSTI]

    Riley, B.; Szreders, B.E.

    1988-04-26T23:59:59.000Z

    In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (/approximately/1100/degree/ /minus/ 1300/degree/C) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20--50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

  19. Computational Intelligence for Deepwater Reservoir Depositional Environments Interpretation

    E-Print Network [OSTI]

    Yu, Tina; Clark, Julian; Sullivan, Morgan; 10.1016/j.jngse.2011.07.014

    2013-01-01T23:59:59.000Z

    Predicting oil recovery efficiency of a deepwater reservoir is a challenging task. One approach to characterize a deepwater reservoir and to predict its producibility is by analyzing its depositional information. This research proposes a deposition-based stratigraphic interpretation framework for deepwater reservoir characterization. In this framework, one critical task is the identification and labeling of the stratigraphic components in the reservoir, according to their depositional environments. This interpretation process is labor intensive and can produce different results depending on the stratigrapher who performs the analysis. To relieve stratigrapher's workload and to produce more consistent results, we have developed a novel methodology to automate this process using various computational intelligence techniques. Using a well log data set, we demonstrate that the developed methodology and the designed workflow can produce finite state transducer models that interpret deepwater reservoir depositional...

  20. Travertine Deposits of Soda Dam, New Mexico, and Their Implications...

    Open Energy Info (EERE)

    Travertine Deposits of Soda Dam, New Mexico, and Their Implications for the Age and Evolution of the Valles Caldera Hydrothermal System Jump to: navigation, search OpenEI Reference...

  1. Particle deposition in ventilation ducts: Connectors, bends anddeveloping flow

    SciTech Connect (OSTI)

    Sippola, Mark R.; Nazaroff, William W.

    2004-03-01T23:59:59.000Z

    In ventilation duct flow the turbulent flow profile is commonly disturbed or not fully developed and these conditions are likely to influence particle deposition to duct surfaces. Particle deposition rates at eight S-connectors, in two 90{sup o} duct bends and in two ducts where the turbulent flow profile was not fully developed were measured in a laboratory duct system with both galvanized steel and internally insulated ducts with hydraulic diameters of 15.2 cm. In the steel duct system, experiments with nominal particle diameters of 1, 3, 5, 9 and 16 {micro}m were conducted at each of three nominal air speeds: 2.2, 5.3 and 9.0 m/s. In the insulated duct system, deposition of particles with nominal diameters of 1, 3, 5, 8 and 13 {micro}m was measured at nominal air speeds of 2.2, 5.3 and 8.8 m/s. Fluorescent techniques were used to directly measure the deposition velocities of monodisperse fluorescent particles to duct surfaces. Deposition at S-connectors, in bends and in straight ducts with developing turbulence was often greater than deposition in straight ducts with fully developed turbulence for equal particle sizes, air speeds and duct surface orientations. Deposition rates at all locations were found to increase with an increase in particle size or air speed. High deposition rates at S-connectors resulted from impaction and these rates were nearly independent of the orientation of the S-connector. Deposition rates in the two 90{sup o} bends differed by more than an order of magnitude in some cases, probably because of the difference in turbulence conditions at the bend inlets. In straight steel ducts where the turbulent flow profile was developing, the deposition enhancement relative to fully developed turbulence generally increased with air speed and decreased with downstream distance from the duct inlet. This enhancement was greater at the duct ceiling and wall than at the duct floor. In insulated ducts, deposition enhancement was less pronounced overall than in steel ducts. Trends that were observed in steel ducts were present, but weaker, in insulated ducts.

  2. Process for thin film deposition of cadmium sulfide

    DOE Patents [OSTI]

    Muruska, H. Paul (East Windsor, NJ); Sansregret, Joseph L. (Scotch Plains, NJ); Young, Archie R. (Montclair, NJ)

    1982-01-01T23:59:59.000Z

    The present invention teaches a process for depositing layers of cadmium sulfide. The process includes depositing a layer of cadmium oxide by spray pyrolysis of a cadmium salt in an aqueous or organic solvent. The oxide film is then converted into cadmium sulfide by thermal ion exchange of the O.sup.-2 for S.sup.-2 by annealing the oxide layer in gaseous sulfur at elevated temperatures.

  3. Precursors for the polymer-assisted deposition of films

    DOE Patents [OSTI]

    McCleskey, Thomas M.; Burrell, Anthony K.; Jia, Quanxi; Lin, Yuan

    2013-09-10T23:59:59.000Z

    A polymer assisted deposition process for deposition of metal oxide films is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures to yield metal oxide films. Such films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.

  4. Epitaxial growth of VO{sub 2} by periodic annealing

    SciTech Connect (OSTI)

    Tashman, J. W.; Paik, H.; Merz, T. A. [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501 (United States); Lee, J. H. [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501 (United States); Neutron Science Division, Korea Atomic Energy Research Institute, Daejeon 305-353 (Korea, Republic of); Moyer, J. A.; Schiffer, P. [Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Misra, R. [Department of Physics and Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mundy, J. A. [School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 (United States); Spila, T. [Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Schubert, J. [Peter Grünberg Institute, PGI 9-IT, JARA-FIT, Research Centre Jülich, D-52425 Jülich (Germany); Muller, D. A. [School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 (United States); Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 (United States); Schlom, D. G., E-mail: schlom@cornell.edu [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501 (United States); Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 (United States)

    2014-02-10T23:59:59.000Z

    We report the growth of ultrathin VO{sub 2} films on rutile TiO{sub 2} (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO{sub 2} via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3?nm, where a resistance change ?R/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6?nm.

  5. Nucleation kinetics during homoepitaxial growth of TiN(001) by reactive magnetron sputtering Marcel A. Wall, David G. Cahill, I. Petrov, D. Gall, and J. E. Greene

    E-Print Network [OSTI]

    Gall, Daniel

    Nucleation kinetics during homoepitaxial growth of TiN(001) by reactive magnetron sputtering Marcel to study the nucleation of homoepitaxial TiN layers grown on TiN(001) by ultrahigh vacuum reactive kinet- ics of TiN, a two-component refractory ceramic, on TiN 001 . TiN, typically deposited by reactive

  6. In-situ deposition of high-k dielectrics on III-V compound semiconductor in MOCVD system

    E-Print Network [OSTI]

    Cheng, Cheng-Wei, Ph.D. Massachusetts Institute of Technology

    2010-01-01T23:59:59.000Z

    In situ deposition of high-k materials to passivate the GaAs in metal organic chemical vapor deposition (MOCVD) system was well demonstrated. Both atomic layer deposition (ALD) and chemical vapor deposition (CVD) methods ...

  7. Natural mercury isotope variation in coal deposits and organic soils

    SciTech Connect (OSTI)

    Abir, Biswas; Joel D. Blum; Bridget A. Bergquist; Gerald J. Keeler; Zhouqing Xie [University of Michigan, Ann Arbor, MI (United States). Department of Geological Sciences

    2008-11-15T23:59:59.000Z

    There is a need to distinguish among sources of Hg to the atmosphere in order to more fully understand global Hg pollution. In this study we investigate whether coal deposits within the United States, China, and Russia-Kazakhstan, which are three of the five greatest coal-producing regions, have diagnostic Hg isotopic fingerprints that can be used to discriminate among Hg sources. We also investigate the Hg isotopic composition of modern organic soil horizons developed in areas distant from point sources of Hg in North America. Mercury stored in coal deposits displays a wide range of both mass dependent fractionation and mass independent fractionation. {delta}{sup 202}Hg varies in coals by 3{per_thousand} and {Delta}{sup 201}Hg varies by 0.9{per_thousand}. Combining these two Hg isotope signals results in what may be a unique isotopic 'fingerprint' for many coal deposits. Mass independent fractionation of mercury has been demonstrated to occur during photochemical reactions of mercury. This suggests that Hg found in most coal deposits was subjected to photochemical reduction near the Earth's surface prior to deposition. The similarity in MDF and MIF of modern organic soils and coals from North America suggests that Hg deposition from coal may have imprinted an isotopic signature on soils. This research offers a new tool for characterizing mercury inputs from natural and anthropogenic sources to the atmosphere and provides new insights into the geochemistry of mercury in coal and soils. 35 refs., 2 figs., 1 tab.

  8. Visualizing Iron Deposition in Multiple Sclerosis Cadaver Brains

    SciTech Connect (OSTI)

    Habib, Charbel A.; Zheng Weili; Mark Haacke, E. [Department Of Biomedical Engineering, Wayne State University, Detroit, MI 48202 (United States); Webb, Sam [Stanford Synchrotron Radiation Lightsource, Stanford Linear Accelerator Complex National Accelerator Laboratory, Menlo Park, California (United States); Nichol, Helen [Department of Anatomy and Cell Biology, University of Saskatchewan, 107 Wiggins Rd. Rm A302, Saskatoon, SK S7N5E5 (Canada)

    2010-07-23T23:59:59.000Z

    Aim: To visualize and validate iron deposition in two cases of multiple sclerosis using rapid scanning X-Ray Fluorescence (RS-XRF) and Susceptibility Weighted Imaging (SWI). Material and Methods: Two (2) coronal cadaver brain slices from patients clinically diagnosed with multiple sclerosis underwent magnetic resonance imaging (MRI), specifically SWI to image iron content. To confirm the presence of iron deposits and the absence of zinc-rich myelin in lesions, iron and zinc were mapped using RS-XRF. Results: MS lesions were visualized using FLAIR and correlated with the absence of zinc by XRF. XRF and SWI showed that in the first MS case, there were large iron deposits proximal to the draining vein of the caudate nucleus as well as iron deposits associated with blood vessels throughout the globus pallidus. Less iron was seen in association with lesions than in the basal ganglia. The presence of larger amounts of iron correlated reasonably well between RS-XRF and SWI. In the second case, the basal ganglia appeared normal and acute perivascular iron deposition was absent. Conclusion: Perivascular iron deposition is seen in some but not all MS cases, giving credence to the use of SWI to assess iron involvement in MS pathology in vivo.

  9. Nitrogen doping of chemical vapor deposition grown graphene on 4H-SiC (0001)

    SciTech Connect (OSTI)

    Urban, J. M.; Binder, J.; Wysmo?ek, A. [Faculty of Physics, University of Warsaw, ul. Ho?a 69, 00-681 Warsaw (Poland); D?browski, P.; Strupi?ski, W. [Institute of Electronic Materials Technology, ul. Wólczy?ska 133, 01-919 Warsaw (Poland); Kopciuszy?ski, M.; Ja?ochowski, M. [Institute of Physics, Maria Curie-Sk?odowska University, pl. M. Curie-Sk?odowskiej 1, 20-031 Lublin (Poland); Klusek, Z. [Faculty of Physics and Applied Informatics, University of ?ód?, ul. Pomorska 149/153, 90-236 ?ód? (Poland); Baranowski, J. M. [Faculty of Physics, University of Warsaw, ul. Ho?a 69, 00-681 Warsaw (Poland); Institute of Electronic Materials Technology, ul. Wólczy?ska 133, 01-919 Warsaw (Poland)

    2014-06-21T23:59:59.000Z

    We present optical, electrical, and structural properties of nitrogen-doped graphene grown on the Si face of 4H-SiC (0001) by chemical vapor deposition method using propane as the carbon precursor and N{sub 2} as the nitrogen source. The incorporation of nitrogen in the carbon lattice was confirmed by X-ray photoelectron spectroscopy. Angle-resolved photoemission spectroscopy shows carrier behavior characteristic for massless Dirac fermions and confirms the presence of a graphene monolayer in the investigated nitrogen-doped samples. The structural and electronic properties of the material were investigated by Raman spectroscopy. A systematical analysis of the graphene Raman spectra, including D, G, and 2D bands, was performed. In the case of nitrogen-doped samples, an electron concentration on the order of 5–10 × 10{sup 12}?cm{sup ?2} was estimated based upon Raman and Hall effect measurements and no clear dependence of the carrier concentration on nitrogen concentration used during growth was observed. This high electron concentration can be interpreted as both due to the presence of nitrogen in graphitic-like positions of the graphene lattice as well as to the interaction with the substrate. A greater intensity of the Raman D band and increased inhomogeneity, as well as decreased electron mobility, observed for nitrogen-doped samples, indicate the formation of defects and a modification of the growth process induced by nitrogen doping.

  10. Methods for improved growth of group III nitride buffer layers

    DOE Patents [OSTI]

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15T23:59:59.000Z

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  11. Model for deposition of bedded halite in a shallow shelf setting, San Andres Formation, Palo Duro Basin, Texas panhandle

    SciTech Connect (OSTI)

    Hovorka, S.D.

    1985-01-01T23:59:59.000Z

    Existing depositional models for evaporites do not adequately describe facies relationships, halite fabrics, and trace element geochemistry of halite from the Permian San Andres Formation. Interbedding of anhydritic halite and mudstone with disrupted bedding records alternation between marine-dominated brine pool and subaerial environments. Chevron structures and hopper crystal cumulates in the halite indicate subaqueous deposition. Abundant anhydrite partings within halite, which thicken and become interbedded with marine shelf carbonates to the south, demonstrate the facies equivalence and physical connection of evaporite and marine environments. Maintenance of marine character in trace element profiles through halite sequences documents the episodic influx of marine water. Haloturbated structure in mudstone interbeds within the halite is produced by displacive growth of halite within mudstone and dissolution and collapse of this halite as ground-water chemistry fluctuates in response to conditions of alternating desiccation and wetting. Karst features cutting the halite also imply subaerial exposure. Mapping of the fine-scale sedimentary structures, geochemical signature, and insoluble component mineralogy of halite sequences indicates that the brine pool environment extended over areas in excess of 100 km/sup 2/. Sabkha, salina, playa, and deep water basin models of halite-precipitating environments do not satisfactorily describe the shallow marine shelf depositional environment of the San Andres halite.

  12. Economic Growth and Development Economics 777

    E-Print Network [OSTI]

    Almor, Amit

    Economic Growth and Development Economics 777 July 18, 2008 Fall Semester 2008 Professor J. H. Mc of economic growth and development. We will analyze several different growth models and look at some recent empirical research. Text The text for this course is: Economic Growth (2nd Edition) by Robert J. Barro

  13. Ash Deposit Formation and Deposit Properties. A Comprehensive Summary of Research Conducted at Sandia's Combustion Research Facility

    SciTech Connect (OSTI)

    Larry L. Baxter

    2000-08-01T23:59:59.000Z

    This report summarizes experimental and theoretical work performed at Sandia's Combustion Research Facility over the past eight years on the fate of inorganic material during coal combustion. This work has been done under four broad categories: coal characterization, fly ash formation, ash deposition, and deposit property development. The objective was to provide sufficient understanding of these four areas to be able to predict coal behavior in current and advanced conversion systems. This work has led to new characterization techniques for fuels that provide, for the first time, systematic and species specific information regarding the inorganic material. The transformations of inorganic material during combustion can be described in terms of the net effects of the transformations of these individual species. Deposit formation mechanisms provide a framework for predicting deposition rates for abroad range of particle sizes. Predictions based on these rates many times are quite accurate although there are important exceptions. A rigorous framework for evaluating deposit has been established. Substantial data have been obtained with which to exercise this framework, but this portion of the work is less mature than is any other. Accurate prediction of deposit properties as functions of fuel properties, boiler design, and boiler operating conditions represents the single most critical area where additional research is needed.

  14. Understanding the deposition mechanism of pulsed laser deposited B-C films using dual-targets

    SciTech Connect (OSTI)

    Zhang, Song [State Key Laboratory of Advanced Technology for Material Synthesis and Processing, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070 (China); School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Louyu Road, Wuhan 430074 (China); He, Zhiqiang; Wang, Chuanbin; Shen, Qiang; Zhang, Lianmeng [State Key Laboratory of Advanced Technology for Material Synthesis and Processing, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070 (China); Ji, Xiaoli, E-mail: kobe@whut.edu.cn [State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070 (China); Lu, Wenzhong [School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Louyu Road, Wuhan 430074 (China)

    2014-04-21T23:59:59.000Z

    Boron carbide thin films with stoichiometry (boron-carbon atomic ratio) range of 0.1???8.9 were fabricated via pulsed laser deposition by using boron-carbon dual-targets. However, this experimental data on stoichiometry were smaller than the computer simulation values. The discrepancy was investigated by studies on composition and microstructure of the thin films and targets by scanning electron microscopy, excitation laser Raman spectroscopy, and X-ray photoelectron spectroscopy. The results indicate that the boron liquid droplets were formed by phase explosion after laser irradiation on boron sector. Part of the boron droplets would be lost via ejection in the direction of laser beam, which is tilted 45° to the surface of substrate.

  15. Depositional history of Smackover Formation in southwestern Alabama

    SciTech Connect (OSTI)

    Benson, D.J.

    1988-09-01T23:59:59.000Z

    The Smackover Formation in southwestern Alabama is the product of an overall Middle Jurassic transgression. However, significant lateral variation in lithologic sequence reflects the effects of Smackover paleotopography. Paleozoic ridges and Mesozoic horst blocks defined a number of paleohighs, which separated southwestern Alabama into a series of subbasins or embayments. The Smackover lithologic sequence differs significantly from basin to paleohigh. Initial transgression of Smackover seas reworked the upper surface of the underlying Norphlet clastics and resulted in deposition of intertidal to shallow subtidal algally laminated mudstones and peloidal and oncoidal wackestones and packstones. These lower Smackover rocks are common dolomitized and locally anhydritic. Initial lower Smackover deposition was restricted to paleolows, and subaerial clastic deposition continued over the still emergent paleohighs. As sea level continued to rise, these lower Smackover deposits graded upward into skeletal and peloidal wackestones that contain a sparse, somewhat restricted, faunal assemblage. These wackestones are interbedded with argillaceous organic-rich mudstones that reflect deeper, more restricted depositional conditions. By the early Oxfordian, the sea level rise had inundated most of the paleohighs. Ooid and oncoidal grainstone shoals developed across paleohighs and along the updip margin. In the basin centers, skeletal and peloidal wackestone/packstones were being deposited. As the rate of sea level rise decreased, the shoals began to prograde basinward and lagoonal environments developed behind the shoals in some areas. Sea level fluctuations led to the formation of stacked shallowing-upward sequences. Evaporitic sabkhas developed along the updip margin and prograded basinward behind the shoals, eventually terminating carbonate deposition.

  16. Nonlinear structural crack growth monitoring

    DOE Patents [OSTI]

    Welch, Donald E. (Oak Ridge, TN); Hively, Lee M. (Philadelphia, TN); Holdaway, Ray F. (Clinton, TN)

    2002-01-01T23:59:59.000Z

    A method and apparatus are provided for the detection, through nonlinear manipulation of data, of an indicator of imminent failure due to crack growth in structural elements. The method is a process of determining energy consumption due to crack growth and correlating the energy consumption with physical phenomena indicative of a failure event. The apparatus includes sensors for sensing physical data factors, processors or the like for computing a relationship between the physical data factors and phenomena indicative of the failure event, and apparatus for providing notification of the characteristics and extent of such phenomena.

  17. Digital electronic bone growth stimulator

    DOE Patents [OSTI]

    Kronberg, J.W.

    1995-05-09T23:59:59.000Z

    A device is described for stimulating bone tissue by applying a low level alternating current signal directly to the patient`s skin. A crystal oscillator, a binary divider chain and digital logic gates are used to generate the desired waveforms that reproduce the natural electrical characteristics found in bone tissue needed for stimulating bone growth and treating osteoporosis. The device, powered by a battery, contains a switch allowing selection of the correct waveform for bone growth stimulation or osteoporosis treatment so that, when attached to the skin of the patient using standard skin contact electrodes, the correct signal is communicated to the underlying bone structures. 5 figs.

  18. Digital electronic bone growth stimulator

    DOE Patents [OSTI]

    Kronberg, James W. (Aiken, SC)

    1995-01-01T23:59:59.000Z

    A device for stimulating bone tissue by applying a low level alternating current signal directly to the patient's skin. A crystal oscillator, a binary divider chain and digital logic gates are used to generate the desired waveforms that reproduce the natural electrical characteristics found in bone tissue needed for stimulating bone growth and treating osteoporosis. The device, powered by a battery, contains a switch allowing selection of the correct waveform for bone growth stimulation or osteoporosis treatment so that, when attached to the skin of the patient using standard skin contact electrodes, the correct signal is communicated to the underlying bone structures.

  19. Photovoltaic cells fabricated by electrophoretic deposition of CdSe nanocrystals

    E-Print Network [OSTI]

    Smith, Nathanael J.

    Photovoltaic cells fabricated by electrophoretic deposition of CdSe nanocrystals Nathanael J. Smith Electrophoretic deposition was used to deposit CdSe nanocrystals on TiO2 for use in photovoltaic cells formed. A solar cell constructed using electrophoretic deposition exhibited a photovoltaic response from

  20. Maskless deposition of ZnO films Uma Choppali a*1

    E-Print Network [OSTI]

    Mohanty, Saraju P.

    Maskless Mesoscale Materials Deposition (M3 DTM ) is a new direct write technique, which is versatile step. Maskless Mesoscale Materials Deposition (M3 DTM ), being commercialized by Optomec Inc., is also Mesoscale Materials Deposition (M3 DTM ) is an aerosol-based technology for deposition of various materials