National Library of Energy BETA

Sample records for defects charge transport

  1. A Simple Index for Characterizing Charge Transport in Molecular...

    Office of Scientific and Technical Information (OSTI)

    solar (fuels), photosynthesis (natural and artificial), bio-inspired, hydrogen and fuel cells, electrodes - solar, defects, charge transport, spin dynamics, membrane, materials...

  2. Self-Regulation Mechanism for Charged Point Defects in Hybrid...

    Office of Scientific and Technical Information (OSTI)

    Accepted Manuscript: Self-Regulation Mechanism for Charged Point Defects in Hybrid Halide Perovskites Title: Self-Regulation Mechanism for Charged Point Defects in Hybrid Halide ...

  3. Charge state defect engineering of silicon during ion implantation

    SciTech Connect (OSTI)

    Brown, R.A.; Ravi, J.; Erokhin, Y.; Rozgonyi, G.A.; White, C.W.

    1997-01-01

    Effects of in situ interventions which alter defect interactions during implantation, and thereby affect the final damage state, have been investigated. Specifically, we examined effects of internal electric fields and charge carrier injection on damage accumulation in Si. First, we implanted H or He ions into diode structures which were either reverse or forward biased during implantation. Second, we implanted B or Si ions into plain Si wafers while illuminating them with UV light. In each case, the overall effect is one of damage reduction. Both the electric field and charge carrier injection effects may be understood as resulting from changes in defect interactions caused in part by changes to the charge state of defects formed during implantation.

  4. Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

    SciTech Connect (OSTI)

    Wampler, William R.; Myers, Samuel M.

    2014-02-01

    A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defects within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.

  5. Anomalous Charge Transport in Disordered Organic Semiconductors

    SciTech Connect (OSTI)

    Muniandy, S. V.; Woon, K. L.; Choo, K. Y.

    2011-03-30

    Anomalous charge carrier transport in disordered organic semiconductors is studied using fractional differential equations. The connection between index of fractional derivative and dispersion exponent is examined from the perspective of fractional Fokker-Planck equation and its link to the continuous time random walk formalism. The fractional model is used to describe the bi-scaling power-laws observed in the time-of flight photo-current transient data for two different types of organic semiconductors.

  6. Self-regulation mechanism for charged point defects in hybrid halide perovskites

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Walsh, Aron; Scanlon, David O.; Chen, Shiyou; Gong, X. G.; Wei, Su -Huai

    2014-12-11

    Hybrid halide perovskites such as methylammonium lead iodide (CH3NH3PbI3) exhibit unusually low free-carrier concentrations despite being processed at low-temperatures from solution. We demonstrate, through quantum mechanical calculations, that an origin of this phenomenon is a prevalence of ionic over electronic disorder in stoichiometric materials. Schottky defect formation provides a mechanism to self-regulate the concentration of charge carriers through ionic compensation of charged point defects. The equilibrium charged vacancy concentration is predicted to exceed 0.4 % at room temperature. Furthermore, this behavior, which goes against established defect conventions for inorganic semiconductors, has implications for photovoltaic performance.

  7. Final report. Defects and transport in mixed oxides

    SciTech Connect (OSTI)

    Dieckmann, R {umlt u}diger

    2001-12-13

    New results on the point defect chemistry of (Ni{sub x}Fe{sub 1-x}){sub 3-delta}O{sub 4} and on the cation tracer diffusion in this spinel solid solution are presented and discussed. The equation system for the defect chemistry of perovskites of the type A{sub 1-x}B{sub 1+x}O{sub 3-delta} have been worked out and used to derive Kr{umlt o}ger-Vink diagrams. The deviation from stoichiometry, delta, in LA{sub 1-x}Mn{sub 1+x}O{sub 3-delta} has been measured at 1100, 1200, and 1300 degrees Celsius as a function of the oxygen activity and the composition variable x. At high and low oxygen activities, the data were fit by taking into account the electrostatic interaction between the charge defects by making use of the Debye H{umlt u}ckel theory.

  8. Influence of Topological Spin Fluctuations on Charge Transport

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Influence of Topological Spin Fluctuations on Charge Transport Print Layered transition metal oxides are the focus of intense research efforts because they might clarify the...

  9. Graphene Produces More Efficient Charge Transport Inside an Organic...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Graphene Produces More Efficient Charge Transport Inside an Organic Semiconductor Friday, ... devices, enabling the formation of efficient thin film and flexible devices. ...

  10. High-temperature charge and thermal transport properties of the...

    Office of Scientific and Technical Information (OSTI)

    transport properties of the n -type thermoelectric material PbSe Citation Details In-Document Search Title: High-temperature charge and thermal transport properties of the n ...

  11. Charging Up with the Electric Drive Transportation Association | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Energy Charging Up with the Electric Drive Transportation Association Charging Up with the Electric Drive Transportation Association May 20, 2014 - 4:51pm Addthis Test Drive 1 of 5 Test Drive Deputy Assistant Secretary for Transportation Reuben Sarkar drives a Chevrolet Spark EV during the Electric Drive Transportation Association conference in Indianapolis, Indiana on May 20, 2014. The conference brings together industry leaders who are advancing electric vehicle technologies and

  12. Self-regulation of charged defect compensation and formation energy pinning in semiconductors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yang, Ji -Hui; Yin, Wan -Jian; Park, Ji -Sang; Wei, Su -Huai

    2015-11-20

    Current theoretical analyses of defect properties without solving the detailed balance equations often estimate Fermi-level pinning position by omitting free carriers and assume defect concentrations can be always tuned by atomic chemical potentials. This could be misleading in some circumstance. Here we clarify that: (1) Because the Fermi-level pinning is determined not only by defect states but also by free carriers from band-edge states, band-edge states should be treated explicitly in the same footing as the defect states in practice; (2) defect formation energy, thus defect density, could be pinned and independent on atomic chemical potentials due to the entanglementmore » of atomic chemical potentials and Fermi energy, in contrast to the usual expectation that defect formation energy can always be tuned by varying the atomic chemical potentials; and (3) the charged defect compensation behavior, i.e., most of donors are compensated by acceptors or vice versa, is self-regulated when defect formation energies are pinned. The last two phenomena are more dominant in wide-gap semiconductors or when the defect formation energies are small. Using NaCl and CH3NH3PbI3 as examples, we illustrate these unexpected behaviors. Our analysis thus provides new insights that enrich the understanding of the defect physics in semiconductors and insulators.« less

  13. Self-regulation of charged defect compensation and formation energy pinning in semiconductors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yang, Ji -Hui; Yin, Wan -Jian; Park, Ji -Sang; Wei, Su -Huai

    2015-11-20

    Current theoretical analyses of defect properties without solving the detailed balance equations often estimate Fermi-level pinning position by omitting free carriers and assume defect concentrations can be always tuned by atomic chemical potentials. This could be misleading in some circumstance. Here we clarify that: (1) Because the Fermi-level pinning is determined not only by defect states but also by free carriers from band-edge states, band-edge states should be treated explicitly in the same footing as the defect states in practice; (2) defect formation energy, thus defect density, could be pinned and independent on atomic chemical potentials due to the entanglementmoreof atomic chemical potentials and Fermi energy, in contrast to the usual expectation that defect formation energy can always be tuned by varying the atomic chemical potentials; and (3) the charged defect compensation behavior, i.e., most of donors are compensated by acceptors or vice versa, is self-regulated when defect formation energies are pinned. The last two phenomena are more dominant in wide-gap semiconductors or when the defect formation energies are small. Using NaCl and CH3NH3PbI3 as examples, we illustrate these unexpected behaviors. Furthermore, our analysis thus provides new insights that enrich the understanding of the defect physics in semiconductors and insulators.less

  14. Self-regulation of charged defect compensation and formation energy pinning in semiconductors

    SciTech Connect (OSTI)

    Yang, Ji -Hui; Yin, Wan -Jian; Park, Ji -Sang; Wei, Su -Huai

    2015-11-20

    Current theoretical analyses of defect properties without solving the detailed balance equations often estimate Fermi-level pinning position by omitting free carriers and assume defect concentrations can be always tuned by atomic chemical potentials. This could be misleading in some circumstance. Here we clarify that: (1) Because the Fermi-level pinning is determined not only by defect states but also by free carriers from band-edge states, band-edge states should be treated explicitly in the same footing as the defect states in practice; (2) defect formation energy, thus defect density, could be pinned and independent on atomic chemical potentials due to the entanglement of atomic chemical potentials and Fermi energy, in contrast to the usual expectation that defect formation energy can always be tuned by varying the atomic chemical potentials; and (3) the charged defect compensation behavior, i.e., most of donors are compensated by acceptors or vice versa, is self-regulated when defect formation energies are pinned. The last two phenomena are more dominant in wide-gap semiconductors or when the defect formation energies are small. Using NaCl and CH3NH3PbI3 as examples, we illustrate these unexpected behaviors. Our analysis thus provides new insights that enrich the understanding of the defect physics in semiconductors and insulators.

  15. Self-regulation of charged defect compensation and formation energy pinning in semiconductors

    SciTech Connect (OSTI)

    Yang, Ji -Hui; Yin, Wan -Jian; Park, Ji -Sang; Wei, Su -Huai

    2015-11-20

    Current theoretical analyses of defect properties without solving the detailed balance equations often estimate Fermi-level pinning position by omitting free carriers and assume defect concentrations can be always tuned by atomic chemical potentials. This could be misleading in some circumstance. Here we clarify that: (1) Because the Fermi-level pinning is determined not only by defect states but also by free carriers from band-edge states, band-edge states should be treated explicitly in the same footing as the defect states in practice; (2) defect formation energy, thus defect density, could be pinned and independent on atomic chemical potentials due to the entanglement of atomic chemical potentials and Fermi energy, in contrast to the usual expectation that defect formation energy can always be tuned by varying the atomic chemical potentials; and (3) the charged defect compensation behavior, i.e., most of donors are compensated by acceptors or vice versa, is self-regulated when defect formation energies are pinned. The last two phenomena are more dominant in wide-gap semiconductors or when the defect formation energies are small. Using NaCl and CH3NH3PbI3 as examples, we illustrate these unexpected behaviors. Furthermore, our analysis thus provides new insights that enrich the understanding of the defect physics in semiconductors and insulators.

  16. Influence of Topological Spin Fluctuations on Charge Transport

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NaxCoO2 (with variable x) is similar to cuprate HTSCs. The parent compounds are Mott insulators, in which a strong electrostatic repulsion blocks charge transport; they...

  17. Charge Transport within a Three-Dimensional DNA Nanostructure Framework

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Charge Transport within a Three-Dimensional DNA Nanostructure Framework Authors: Lu, N., Pei, H., Ge, Z., Simmons, C.R., Yan, H., and Fan, C. Title: Charge Transport within a Three-Dimensional DNA Nanostructure Framework Source: Journal of the American Chemical Society Year: 2012 Volume: 134 Pages: 13148-13151 ABSTRACT: Three-dimensional (3D) DNA nanostructures have shown great promise for various applications including molecular sensing and therapeutics. Here we report kinetic studies of

  18. Influence of Topological Spin Fluctuations on Charge Transport

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Influence of Topological Spin Fluctuations on Charge Transport Influence of Topological Spin Fluctuations on Charge Transport Print Wednesday, 27 April 2005 00:00 Layered transition metal oxides are the focus of intense research efforts because they might clarify the superconducting mechanism of cuprate high-temperature superconductors (HTSCs). A case in point is NaxCoO2 with x = 0.7, which is a parent compound for a family of cobaltites that exhibits superconductivity. This class of materials

  19. Graphene Produces More Efficient Charge Transport Inside an Organic

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Semiconductor | Stanford Synchrotron Radiation Lightsource Graphene Produces More Efficient Charge Transport Inside an Organic Semiconductor Friday, January 30, 2015 Graphene, a two dimensional semi-metal made of sp2 hybridized carbon, is an outstanding material which exhibits high mechanical and chemical stability, as well as high charge carrier mobility. Graphene has recently received considerable attention because it can be directly integrated into opto-electronic devices, enabling the

  20. Defect-mediated transport and electronic irradiation effect in individual domains of CVD-grown monolayer MoS2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Durand, Corentin; Zhang, Xiaoguang; Fowlkes, Jason; Najmaei, Sina; Lou, Jun; Li, An -Ping

    2015-01-16

    We study the electrical transport properties of atomically thin individual crystalline grains of MoS2 with four-probe scanning tunneling microscopy. The monolayer MoS2 domains are synthesized by chemical vapor deposition on SiO2/Si substrate. Temperature dependent measurements on conductance and mobility show that transport is dominated by an electron charge trapping and thermal release process with very low carrier density and mobility. The effects of electronic irradiation are examined by exposing the film to electron beam in the scanning electron microscope in an ultrahigh vacuum environment. The irradiation process is found to significantly affect the mobility and the carrier density of themore » material, with the conductance showing a peculiar time-dependent relaxation behavior. It is suggested that the presence of defects in active MoS2 layer and dielectric layer create charge trapping sites, and a multiple trapping and thermal release process dictates the transport and mobility characteristics. The electron beam irradiation promotes the formation of defects and impact the electrical properties of MoS2. Finally, our study reveals the important roles of defects and the electron beam irradiation effects in the electronic properties of atomic layers of MoS2.« less

  1. Ion Transport Dynamics in Acid Variable Charge Subsoils

    SciTech Connect (OSTI)

    Qafoku, Nik; Sumner, Malcolm E.; Toma, Mitsuru

    2005-06-06

    This is a mini-review of the research work conducted by the authors with the objective of studying ion transport in variable charge subsoils collected from different areas around the world. An attempt is made in these studies to relate the unique behavior manifested during ionic transport in these subsoils with their mineralogical, physical and chemical properties, which are markedly different from those in soils from temperate regions. The variable charge subsoils have a relatively high salt sorption capacity and anion exchange capacity (AEC) that retards anions downward movement. The AEC correlates closely with the anion retardation coefficients. Ca2+ applied with gypsum in topsoil may be transported to the subsoil and may improve the subsoil chemical properties. These results may help in developing appropriate management strategies under a range of mineralogical, physical, and chemical conditions.

  2. A General Relationship between Disorder, Aggregation, and Charge Transport

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in Conjugated Polymers | Stanford Synchrotron Radiation Lightsource A General Relationship between Disorder, Aggregation, and Charge Transport in Conjugated Polymers Monday, September 23, 2013 The potential for combining low-cost manufacturing and mechanical robustness with engineering of specific opto-electronic properties has recently spurred great interest in semiconducting polymers. Consequently, devices based on organic semiconductors have reached significant milestones such as ~10%

  3. Influence of Topological Spin Fluctuations on Charge Transport

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Influence of Topological Spin Fluctuations on Charge Transport Print Layered transition metal oxides are the focus of intense research efforts because they might clarify the superconducting mechanism of cuprate high-temperature superconductors (HTSCs). A case in point is NaxCoO2 with x = 0.7, which is a parent compound for a family of cobaltites that exhibits superconductivity. This class of materials is also thought to be ideal for detecting the long-sought resonating valence bond (RVB) state

  4. Charge Transport Anisotropy Due to Grain Boundaries in Directionally

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Crystallized Thin Films of Regio-Regular Poly(3-hexylthiophene) Charge Transport Anisotropy Due to Grain Boundaries in Directionally Crystallized Thin Films of Regio-Regular Poly(3-hexylthiophene) Semicrystalline polymers, such as polythiophenes, hold much promise as active layers in printable electronic devices such as photovoltaic cells, sensors, and thin film transistors. As organic semiconductors approach commercialization, there is a need to better understand the relationship between

  5. Influence of Topological Spin Fluctuations on Charge Transport

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Influence of Topological Spin Fluctuations on Charge Transport Print Layered transition metal oxides are the focus of intense research efforts because they might clarify the superconducting mechanism of cuprate high-temperature superconductors (HTSCs). A case in point is NaxCoO2 with x = 0.7, which is a parent compound for a family of cobaltites that exhibits superconductivity. This class of materials is also thought to be ideal for detecting the long-sought resonating valence bond (RVB) state

  6. Influence of Topological Spin Fluctuations on Charge Transport

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Influence of Topological Spin Fluctuations on Charge Transport Print Layered transition metal oxides are the focus of intense research efforts because they might clarify the superconducting mechanism of cuprate high-temperature superconductors (HTSCs). A case in point is NaxCoO2 with x = 0.7, which is a parent compound for a family of cobaltites that exhibits superconductivity. This class of materials is also thought to be ideal for detecting the long-sought resonating valence bond (RVB) state

  7. Influence of Topological Spin Fluctuations on Charge Transport

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Influence of Topological Spin Fluctuations on Charge Transport Print Layered transition metal oxides are the focus of intense research efforts because they might clarify the superconducting mechanism of cuprate high-temperature superconductors (HTSCs). A case in point is NaxCoO2 with x = 0.7, which is a parent compound for a family of cobaltites that exhibits superconductivity. This class of materials is also thought to be ideal for detecting the long-sought resonating valence bond (RVB) state

  8. Influence of Topological Spin Fluctuations on Charge Transport

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Influence of Topological Spin Fluctuations on Charge Transport Print Layered transition metal oxides are the focus of intense research efforts because they might clarify the superconducting mechanism of cuprate high-temperature superconductors (HTSCs). A case in point is NaxCoO2 with x = 0.7, which is a parent compound for a family of cobaltites that exhibits superconductivity. This class of materials is also thought to be ideal for detecting the long-sought resonating valence bond (RVB) state

  9. Ambipolar charge transport in microcrystalline silicon thin-film transistors

    SciTech Connect (OSTI)

    Knipp, Dietmar; Marinkovic, M.; Chan, Kah-Yoong; Gordijn, Aad; Stiebig, Helmut

    2011-01-15

    Hydrogenated microcrystalline silicon ({mu}c-Si:H) is a promising candidate for thin-film transistors (TFTs) in large-area electronics due to high electron and hole charge carrier mobilities. We report on ambipolar TFTs based on {mu}c-Si:H prepared by plasma-enhanced chemical vapor deposition at temperatures compatible with flexible substrates. Electrons and holes are directly injected into the {mu}c-Si:H channel via chromium drain and source contacts. The TFTs exhibit electron and hole charge carrier mobilities of 30-50 cm{sup 2}/V s and 10-15 cm{sup 2}/V s, respectively. In this work, the electrical characteristics of the ambipolar {mu}c-Si:H TFTs are described by a simple analytical model that takes the ambipolar charge transport into account. The analytical expressions are used to model the transfer curves, the potential and the net surface charge along the channel of the TFTs. The electrical model provides insights into the electronic transport of ambipolar {mu}c-Si:H TFTs.

  10. Charge Transport and Glassy Dynamics in Ionic Liquids

    SciTech Connect (OSTI)

    Sangoro, Joshua R; Kremer, Friedrich

    2012-01-01

    Ionic liquids (ILs) exhibit unique features such as low melting points, low vapor pressures, wide liquidus temperature ranges, high thermal stability, high ionic conductivity, and wide electrochemical windows. As a result, they show promise for use in variety of applications: as reaction media, in batteries and supercapacitors, in solar and fuel cells, for electrochemical deposition of metals and semiconductors, for protein extraction and crystallization, and many others. Because of the ease with which they can be supercooled, ionic liquids offer new opportunities to investigate long-standing questions regarding the nature of the dynamic glass transition and its possible link to charge transport. Despite the significant steps achieved from experimental and theoretical studies, no generally accepted quantitative theory of dynamic glass transition to date has been capable of reproducing all the experimentally observed features. In this Account, we discuss recent studies of the interplay between charge transport and glassy dynamics in ionic liquids as investigated by a combination of several experimental techniques including broadband dielectric spectroscopy, pulsed field gradient nuclear magnetic resonance, dynamic mechanical spectroscopy, and differential scanning calorimetry. Based on EinsteinSmoluchowski relations, we use dielectric spectra of ionic liquids to determine diffusion coefficients in quantitative agreement with independent pulsed field gradient nuclear magnetic resonance measurements, but spanning a broader range of more than 10 orders of magnitude. This approach provides a novel opportunity to determine the electrical mobility and effective number density of charge carriers as well as their types of thermal activation from the measured dc conductivity separately. We also unravel the origin of the remarkable universality of charge transport in different classes of glass-forming ionic liquids.

  11. SLC injector simulation and tuning for high charge transport

    SciTech Connect (OSTI)

    Yeremian, A.D.; Miller, R.H.; Clendenin, J.E.; Early, R.A.; Ross, M.C.; Turner, J.L.; Wang, J.W.

    1992-08-01

    We have simulated the SLC injector from the thermionic gun through the first accelerating section and used the resulting parameters to tune the injector for optimum performance and high charge transport. Simulations are conducted using PARMELA, a three-dimensional ray-trace code with a two-dimensional space-charge model. The magnetic field profile due to the existing magnetic optics is calculated using POISSON, while SUPERFISH is used to calculate the space harmonics of the various bunchers and the accelerator cavities. The initial beam conditions in the PARMELA code are derived from the EGUN model of the gun. The resulting injector parameters from the PARMELA simulation are used to prescribe experimental settings of the injector components. The experimental results are in agreement with the results of the integrated injector model.

  12. Charge and Spin Transport in Dilute Magnetic Semiconductors

    SciTech Connect (OSTI)

    Ullrich, Carsten A.

    2009-07-23

    This proposal to the DOE outlines a three-year plan of research in theoretical and computational condensed-matter physics, with the aim of developing a microscopic theory for charge and spin dynamics in disordered materials with magnetic impurities. Important representatives of this class of materials are the dilute magnetic semiconductors (DMS), which have attracted great attention as a promising basis for spintronics devices. There is an intense experimental effort underway to study the transport properties of ferromagnetic DMS such as (Ga,Mn)As, and a number of interesting features have emerged: negative magnetoresistance, anomalous Hall effect, non-Drude dynamical conductivity, and resistivity maxima at the Curie temperature. Available theories have been able to account for some of these features, but at present we are still far away from a systematic microscopic understanding of transport in DMS. We propose to address this challenge by developing a theory of charge and spin dynamics based on a combination of the memory-function formalism and time-dependent density functional theory. This approach will be capable of dealing with two important issues: (a) the strong degree of correlated disorder in DMS, close to the localization transition (which invalidates the usual relaxation-time approximation to the Boltzmann equation), (b) the essentially unknown role of dynamical many-body effects such as spin Coulomb drag. We will calculate static and dynamical conductivities in DMS as functions of magnetic order and carrier density, which will advance our understanding of recent transport and infrared absorption measurements. Furthermore, we will study collective plasmon excitations in DMS (3D, 2D and quantum wells), whose linewidths could constitute a new experimental probe of the correlation of disorder, many-body effects and charge and spin dynamics in these materials.

  13. Phase Fluctuations and the Absence of Topological Defects in Photo-excited Charge Ordered Nickelate

    SciTech Connect (OSTI)

    Lee, W.S.; Chuang, Y.D.; Moore, R.G.; Zhu, Y.; Patthey, L.; Trigo, M.; Lu, D.H.; Kirchmann, P.S.; Krupin, O.; Yi, M.; Langner, M.; Huse, N.; Robinson, J.S.; Chen, Y.; Zhou, S.Y.; Coslovich, G.; Huber, B.; Reis, D.A.; Kaindl, R.A.; Schoenlein, R.W.; Doering, D.

    2012-05-15

    The dynamics of an order parameter's amplitude and phase determines the collective behaviour of novel states emerging in complex materials. Time- and momentum-resolved pump-probe spectroscopy, by virtue of measuring material properties at atomic and electronic time scales out of equilibrium, can decouple entangled degrees of freedom by visualizing their corresponding dynamics in the time domain. Here we combine time-resolved femotosecond optical and resonant X-ray diffraction measurements on charge ordered La{sub 1.75}Sr{sub 0.25}NiO{sub 4} to reveal unforeseen photoinduced phase fluctuations of the charge order parameter. Such fluctuations preserve long-range order without creating topological defects, distinct from thermal phase fluctuations near the critical temperature in equilibrium. Importantly, relaxation of the phase fluctuations is found to be an order of magnitude slower than that of the order parameter's amplitude fluctuations, and thus limits charge order recovery. This new aspect of phase fluctuations provides a more holistic view of the phase's importance in ordering phenomena of quantum matter.

  14. Phase fluctuations and the absence of topological defects in photo-excited charge ordered nickelate

    SciTech Connect (OSTI)

    Lee, W.S.; Chuang, Y.D.; Moore, R.G.; Zhu, Y.; Patthey, L.; Trigo, M.; Lu, D.H.; Kirchmann, P.S.; Krupin, O.; Yi, M.; Langner, M.; Huse, N.; Robinson, J.S.; Chen, Y.; Zhou, S.Y.; Coslovich, G.; Huber, B.; Reis, D.A.; Kaindl, R.A.; Schoenlein, R.W.; Doering, D.; Denes, P.; Schlotter, W.F.; Turner, J.J.; Johnson, S.L.; Fö rst, M.; Sasagawa, T.; Kung, Y.F.; Sorini, A.P.; Kemper, A.F.; Moritz, B.; Devereaux, T.P.; Lee, D.-H.; Shen, Z.X.; Hussain, Z.

    2012-01-01

    The dynamics of an order parameter's amplitude and phase determines the collective behaviour of novel states emerging in complex materials. Time- and momentum-resolved pump-probe spectroscopy, by virtue of measuring material properties at atomic and electronic time scales out of equilibrium, can decouple entangled degrees of freedom by visualizing their corresponding dynamics in the time domain. Here we combine time-resolved femotosecond optical and resonant X-ray diffraction measurements on charge ordered La1.75Sr0.25NiO4 to reveal unforeseen photoinduced phase fluctuations of the charge order parameter. Such fluctuations preserve long-range order without creating topological defects, distinct from thermal phase fluctuations near the critical temperature in equilibrium. Importantly, relaxation of the phase fluctuations is found to be an order of magnitude slower than that of the order parameter's amplitude fluctuations, and thus limits charge order recovery. This new aspect of phase fluctuations provides a more holistic view of the phase's importance in ordering phenomena of quantum matter.

  15. Electron emission and defect formation in the interaction of slow,highly charged ions with diamond surfaces

    SciTech Connect (OSTI)

    Sideras-Haddad, E.; Shrivastava, S.; Rebuli, D.B.; Persaud, A.; Schneider, D.H.; Schenkel, T.

    2006-05-31

    We report on electron emission and defect formation in theinteraction between slow (v~;0.3 vBohr) highly charged ions (SHCI) withinsulating (type IIa) and semiconducting (type IIb) diamonds. Electronemission induced by 31Pq+ (q=5 to 13), and 136Xeq+ (q=34 to 44) withkinetic energies of 9 kVxq increase linearly with the ion charge states,reaching over 100 electrons per ion for high xenon charge states withoutsurface passivation of the diamond with hydrogen. Yields from bothdiamond types are up to a factor of two higher then from reference metalsurfaces. Crater like defects with diameters of 25 to 40 nm are formed bythe impact of single Xe44+ ions. High secondary electron yields andsingle ion induced defects enable the formation of single dopant arrayson diamond surfaces.

  16. Local charge transport properties of hydrazine reduced monolayer graphene oxide sheets prepared under pressure condition

    SciTech Connect (OSTI)

    Ryuzaki, Sou, E-mail: ryuzaki.soh.341@m.kyushu-u.ac.jp; Meyer, Jakob A. S.; Petersen, Sren; Nrgaard, Kasper; Hassenkam, Tue; Laursen, Bo W. [Nano-Science Center and Department of Chemistry, University of Copenhagen, Universitetparken 5, 2100 Kbenhaven (Denmark)

    2014-09-01

    Charge transport properties of chemically reduced graphene oxide (RGO) sheets prepared by treatment with hydrazine were examined using conductive atomic force microscopy. The current-voltage (I-V) characteristics of monolayer RGO sheets prepared under atmospheric pressure followed an exponentially increase due to 2D variable-range hopping conduction through small graphene domains in an RGO sheet containing defect regions of residual sp{sup 3} carbon clusters bonded to oxygen groups, whereas RGO sheets prepared in a closed container under moderate pressure showed linear I-V characteristics with a conductivity of 267.2?537.5?S/m. It was found that the chemical reduction under pressure results in larger graphene domains (sp{sup 2} networks) in the RGO sheets when compared to that prepared under atmospheric pressure, indicating that the present reduction of GO sheets under the pressure is one of the effective methods to make well-reduced GO sheets.

  17. Revealing origin of quasi-one dimensional current transport in defect rich two dimensional materials

    SciTech Connect (OSTI)

    Lotz, Mikkel R.; Boll, Mads; Bøggild, Peter; Petersen, Dirch H.; Hansen, Ole; Kjær, Daniel

    2014-08-04

    The presence of defects in graphene have for a long time been recognized as a bottleneck for its utilization in electronic and mechanical devices. We recently showed that micro four-point probes may be used to evaluate if a graphene film is truly 2D or if defects in proximity of the probe will lead to a non-uniform current flow characteristic of lower dimensionality. In this work, simulations based on a finite element method together with a Monte Carlo approach are used to establish the transition from 2D to quasi-1D current transport, when applying a micro four-point probe to measure on 2D conductors with an increasing amount of line-shaped defects. Clear 2D and 1D signatures are observed at low and high defect densities, respectively, and current density plots reveal the presence of current channels or branches in defect configurations yielding 1D current transport. A strong correlation is found between the density filling factor and the simulation yield, the fraction of cases with 1D transport and the mean sheet conductance. The upper transition limit is shown to agree with the percolation threshold for sticks. Finally, the conductance of a square sample evaluated with macroscopic edge contacts is compared to the micro four-point probe conductance measurements and we find that the micro four-point probe tends to measure a slightly higher conductance in samples containing defects.

  18. Energy Department Welcomes Department of Transportation as New Workplace Charging Challenge Partner

    Broader source: Energy.gov [DOE]

    Today, the Energy Department is welcoming the Department of Transportation (DOT) as a partner in its Workplace Charging Challenge, which aims to make workplace charging for plug-in electric vehicles available to employees across the country.

  19. Charge transport in hybrid nanorod-polymer composite photovoltaiccells

    SciTech Connect (OSTI)

    Huynh, Wendy U.; Dittmer, Janke J.; Teclemariam, Nerayo; Milliron, Delia; Alivisatos, A. Paul; Barnham, Keith W.J.

    2002-06-21

    Charge transport in composites of inorganic nanorods and aconjugated polymer is investigated using a photovoltaic device structure.We show that the current-voltage (I-V) curves in the dark can be modelledusing the Shockley equation modified to include series and shuntresistance at low current levels, and using an improved model thatincorporates both the Shockley equation and the presence of a spacecharge limited region at high currents. Under illumination, theefficiency of photocurrent generation is found to be dependent on appliedbias. Furthermore, the photocurrent-light intensity dependence was foundto be sublinear. An analysis of the shunt resistance as a function oflight intensity suggests that the photocurrent as well as the fill factoris diminished as a result of increased photoconductivity of the activelayer at high light intensity. By studying the intensity dependence ofthe open circuit voltage for nanocrystals with different diameters andthus ! band gaps, it was inferred that Fermi-level pinning occurs at theinterface between the aluminum electrode and the nanocrystal.

  20. NREL: Transportation Research - NREL's Campus EV Charging Stations...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NREL's Campus EV Charging Stations are Now More Integrated with the Grid Researcher looks at computer in parking garage standing near electric vehicle charging station. Myungsoo ...

  1. Intrinsic slow charge response in the perovskite solar cells: Electron and ion transport

    SciTech Connect (OSTI)

    Shi, Jiangjian; Xu, Xin; Zhang, Huiyin; Luo, Yanhong; Li, Dongmei; Meng, Qingbo

    2015-10-19

    The intrinsic charge response and hysteresis characteristic in the perovskite solar cell has been investigated by an electrically modulated transient photocurrent technology. An ultraslow charge response process in the timescale of seconds is observed, which can be well explained by the ion migration in the perovskite CH{sub 3}NH{sub 3}PbI{sub 3} film driven by multiple electric fields derived from the heterojunction depletion charge, the external modulation, and the accumulated ion charge. Furthermore, theoretical calculation of charge transport reveals that the hysteresis behavior is also significantly influenced by the interfacial charge extraction velocity and the carrier transport properties inside the cell.

  2. Defect Interactions and Ionic Transport in Scandia Stabilized Zirconia

    SciTech Connect (OSTI)

    Devanathan, Ramaswami; Thevuthasan, Suntharampillai; Gale, Julian D.

    2009-06-24

    Atomistic simulation has been used to study ionic transport in scandia-stabilized zirconia, as well as scandia and yttria-co-doped zirconia, as a function of temperature and composition. The oxygen diffusion coefficient shows a peak at a composition of 6 mole % Sc2O3. Oxygen vacancies prefer to be second nearest neighbours to yttrium ions, but have little preference between first and second neighbour positions with respect to scandium ions. The Sc-O bond length is about 2.17 compared to 2.28 for the Y-O bond. Oxygen migration between cation tetrahedra is impeded less effectively by Sc-Sc edges than by Y-Y edges. A neutral cluster of two scandium ions with an oxygen vacancy in the common first neighbour position has a binding energy of -0.56 eV. The formation of such clusters may contribute to conductivity degradation of stabilized zirconia at elevated temperature.

  3. Specific features of defect and mass transport in concentrated fcc alloys

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Osetsky, Yuri N.; Béland, Laurent K.; Stoller, Roger E.

    2016-06-15

    We report that diffusion and mass transport are basic properties that control materials performance, such as phase stability, solute decomposition and radiation tolerance. While understanding diffusion in dilute alloys is a mature field, concentrated alloys are much less studied. Here, atomic-scale diffusion and mass transport via vacancies and interstitial atoms are compared in fcc Ni, Fe and equiatomic Ni-Fe alloy. High temperature properties were determined using conventional molecular dynamics on the microsecond timescale, whereas the kinetic activation-relaxation (k-ART) approach was applied at low temperatures. The k-ART was also used to calculate transition states in the alloy and defect transport coefficients.more » The calculations reveal several specific features. For example, vacancy and interstitial defects migrate via different alloy components, diffusion is more sluggish in the alloy and, notably, mass transport in the concentrated alloy cannot be predicted on the basis of diffusion in its pure metal counterparts. Lastly, the percolation threshold for the defect diffusion in the alloy is discussed and it is suggested that this phenomenon depends on the properties and diffusion mechanisms of specific defects.« less

  4. Enhanced charge recombination due to surfaces and twin defects in GaAs nanostructures

    SciTech Connect (OSTI)

    Brown, Evan; Sheng, Chunyang; Nakano, Aiichiro; Shimamura, Kohei; Shimojo, Fuyuki

    2015-02-07

    Power conversion efficiency of gallium arsenide (GaAs) nanowire (NW) solar cells is severely limited by enhanced charge recombination (CR) at sidewall surfaces, but its atomistic mechanisms are not well understood. In addition, GaAs NWs usually contain a high density of twin defects that form a twin superlattice, but its effects on CR dynamics are largely unknown. Here, quantum molecular dynamics (QMD) simulations reveal the existence of an intrinsic type-II heterostructure at the (110) GaAs surface. Nonadiabatic quantum molecular dynamics (NAQMD) simulations show that the resulting staggered band alignment causes a photoexcited electron in the bulk to rapidly transfer to the surface. We have found orders-of-magnitude enhancement of the CR rate at the surface compared with the bulk value. Furthermore, QMD and NAQMD simulations show unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective CR centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and provides microscopic understanding of the underlying CR processes.

  5. Controllable spin-charge transport in strained graphene nanoribbon devices

    SciTech Connect (OSTI)

    Diniz, Ginetom S., E-mail: ginetom@gmail.com; Guassi, Marcos R. [Institute of Physics, University of Braslia, 70919-970, Braslia-DF (Brazil); Qu, Fanyao [Institute of Physics, University of Braslia, 70919-970, Braslia-DF (Brazil); Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2014-09-21

    We theoretically investigate the spin-charge transport in two-terminal device of graphene nanoribbons in the presence of a uniform uniaxial strain, spin-orbit coupling, exchange field, and smooth staggered potential. We show that the direction of applied strain can efficiently tune strain-strength induced oscillation of band-gap of armchair graphene nanoribbon (AGNR). It is also found that electronic conductance in both AGNR and zigzag graphene nanoribbon (ZGNR) oscillates with Rashba spin-orbit coupling akin to the Datta-Das field effect transistor. Two distinct strain response regimes of electronic conductance as function of spin-orbit couplings magnitude are found. In the regime of small strain, conductance of ZGNR presents stronger strain dependence along the longitudinal direction of strain. Whereas for high values of strain shows larger effect for the transversal direction. Furthermore, the local density of states shows that depending on the smoothness of the staggered potential, the edge states of AGNR can either emerge or be suppressed. These emerging states can be determined experimentally by either spatially scanning tunneling microscope or by scanning tunneling spectroscopy. Our findings open up new paradigms of manipulation and control of strained graphene based nanostructure for application on novel topological quantum devices.

  6. Introducing thermally stable inter-tube defects to assist off-axial phonon transport in carbon nanotube films

    SciTech Connect (OSTI)

    Wang, Jing; Chen, Di; Wallace, Joseph; Gigax, Jonathan; Wang, Xuemei; Shao, Lin

    2014-05-12

    Through integrated molecular dynamics (MD) simulations and experimental studies, we demonstrated the feasibility of an ion-irradiation-and-annealing based phonon engineering technique to enhance thermal conductivity of carbon nanotube (CNT) films. Upon ion irradiation of CNT films, both inter-tube defects and intra-tube defects are introduced. Our MD simulations show that inter-tube defects created between neighboring tubes are much more stable than intra-tube defects created on tube graphitic planes. Upon thermal annealing, intra-tube defects are preferentially removed but inter-tube defects stay. Consequently, axial phonon transport increases due to reduced phonon scattering and off-axial phonon transport is sustained due to the high stability of inter-tube defects, leading to a conductivity enhancement upon annealing. The modeling predictions agree with experimental observations that thermal conductivities of CNT films were enhanced after 2 MeV hydrogen ion irradiations and conductivities were further enhanced upon post irradiation annealing.

  7. ChargePoint is Helping Electrify America's Transportation | Department...

    Broader source: Energy.gov (indexed) [DOE]

    of plug-in electric vehicles (PEVs), the Energy Department supported the ChargePoint America project in 2009 under the American Recovery and Reinvestment Act. At the...

  8. Modeling the effect of gas transport on the formation of defects during thermolysis of powder moldings

    SciTech Connect (OSTI)

    Song, J.H.; Edirisinghe, M.J.; Evans, J.R.; Twizell, E.H.

    1996-04-01

    The removal of binder from ceramic or metal moldings by thermolysis involves the transport of degradation products through the parent organic phase and the vacated porous body. A numerical model has been developed to combine an equation which takes into account different gas-flow regimes with an equation for the transport of organic molecules in molten polymers. Computer modeling reveals the critical heating rate above which defects occur due to boiling of the polymer-monomer solution at the center of the molding. The situation in which a porous outer layer of the molding develops, offering resistance to flow of the evolved monomer gas, is then treated. This gives rise to a moving boundary with a variable concentration of diffusant which is dependent on the surface flux, gas transport coefficient and thickness of the porous layer. The contributions of diffusion and viscous flow to gas transport are considered. {copyright} {ital 1996 Materials Research Society.}

  9. The role of space charge compensation for ion beam extraction and ion beam transport (invited)

    SciTech Connect (OSTI)

    Spädtke, Peter

    2014-02-15

    Depending on the specific type of ion source, the ion beam is extracted either from an electrode surface or from a plasma. There is always an interface between the (almost) space charge compensated ion source plasma, and the extraction region in which the full space charge is influencing the ion beam itself. After extraction, the ion beam is to be transported towards an accelerating structure in most cases. For lower intensities, this transport can be done without space charge compensation. However, if space charge is not negligible, the positive charge of the ion beam will attract electrons, which will compensate the space charge, at least partially. The final degree of Space Charge Compensation (SCC) will depend on different properties, like the ratio of generation rate of secondary particles and their loss rate, or the fact whether the ion beam is pulsed or continuous. In sections of the beam line, where the ion beam is drifting, a pure electrostatic plasma will develop, whereas in magnetic elements, these space charge compensating electrons become magnetized. The transport section will provide a series of different plasma conditions with different properties. Different measurement tools to investigate the degree of space charge compensation will be described, as well as computational methods for the simulation of ion beams with partial space charge compensation.

  10. ChargePoint is Helping Electrify America's Transportation | Department...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    These savings are equivalent to taking more than 9,000 cars off the road for a year. Much of this growth is due to customers installing their own charging stations with private ...

  11. Influence of Topological Spin Fluctuations on Charge Transport

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    eV. The PrincetonALS group performed a detailed investigation of low-energy electronic structure and charge dynamics of the parent cobaltite compound Na0.7CoO2 at ALS Beamlines...

  12. Influence of defects on the charge density wave of ([SnSe]1+δ)1(VSe2)1 ferecrystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Falmbigl, Matthias; Putzky, Daniel; Ditto, Jeffrey; Esters, Marco; Bauers, Sage R.; Ronning, Filip; Johnson, David C.

    2015-07-14

    A series of ferecrystalline compounds ([SnSe]1+δ)1(VSe2)1 with varying Sn/V ratios were synthesized using the modulated elemental reactant technique. Temperature-dependent specific heat data reveal a phase transition at 102 K, where the heat capacity changes abruptly. An abrupt increase in electrical resistivity occurs at the same temperature, correlated with an abrupt increase in the Hall coefficient. Combined with the magnitude and nature of the specific heat discontinuity, this suggests that the transition is similar to the charge density wave transitions in transition metal dichalcogenides. An ordered intergrowth was formed over a surprisingly wide compositional range of Sn/V ratios of 0.89 ≤more » 1 + δ ≤ 1.37. X-ray diffraction and transmission electron microscopy reveal the formation of various volume defects in the compounds in response to the nonstoichiometry. The electrical resistivity and Hall coefficient data of samples with different Sn/V ratios show systematic variation in the carrier concentration with the Sn/V ratio. There is no significant change in the onset temperature of the charge density wave transition, only a variation in the carrier densities before and after the transition. Given the sensitivity of the charge density wave transitions of transition metal dichalcogenides to variations in composition, it is very surprising that the charge density wave transition observed at 102 K for ([SnSe]1.15)1(VSe2)1 is barely influenced by the nonstoichiometry and structural defects. As a result, this might be a consequence of the two-dimensional nature of the structurally independent VSe2 layers.« less

  13. Oxygen transport in off-stoichiometric uranium dioxide mediated by defect clustering dynamics

    SciTech Connect (OSTI)

    Yu, Jianguo; Bai, Xian -Ming; El-Azab, Anter; Allen, Todd R.

    2015-03-05

    In this study, oxygen transport is central to many properties of oxides such as stoichiometric changes, phase transformation and ionic conductivity. In this paper, we report a mechanism for oxygen transport in uranium dioxide (UO2) in which the kinetics is mediated by defect clustering dynamics. In particular, the kinetic Monte Carlo (KMC) method has been used to investigate the kinetics of oxygen transport in UO2 under the condition of creation and annihilation of oxygen vacancies and interstitials as well as oxygen interstitial clustering, with variable offstoichiometry and temperature conditions. It is found that in hypo-stoichiometric UO2-x, oxygen transport is well described by the vacancy diffusion mechanism while in hyper-stoichiometric UO2+x, oxygen interstitial cluster diffusion contributes significantly to oxygen transport kinetics, particularly at high temperatures and high off-stoichiometry levels. It is also found that diinterstitial clusters and single interstitials play dominant roles in oxygen diffusion while other larger clusters have negligible contributions. However, the formation, coalescence and dissociation of these larger clusters indirectly affects the overall oxygen diffusion due to their interactions with mono and di-interstitials, thus providing a explanation of the experimental observation of saturation or even drop of oxygen diffusivity at high off-stoichiometry.

  14. Oxygen transport in off-stoichiometric uranium dioxide mediated by defect clustering dynamics

    SciTech Connect (OSTI)

    Yu, Jianguo Bai, Xian-Ming; El-Azab, Anter; Allen, Todd R.

    2015-03-07

    Oxygen transport is central to many properties of oxides such as stoichiometric changes, phase transformation, and ionic conductivity. In this paper, we report a mechanism for oxygen transport in uranium dioxide (UO{sub 2}) in which the kinetics is mediated by defect clustering dynamics. In particular, the kinetic Monte Carlo method has been used to investigate the kinetics of oxygen transport in UO{sub 2} under the condition of creation and annihilation of oxygen vacancies and interstitials as well as oxygen interstitial clustering, with variable off-stoichiometry and temperature conditions. It is found that in hypo-stoichiometric UO{sub 2?x}, oxygen transport is well described by the vacancy diffusion mechanism while in hyper-stoichiometric UO{sub 2+x}, oxygen interstitial cluster diffusion contributes significantly to oxygen transport kinetics, particularly at high temperatures and high off-stoichiometry levels. It is also found that di-interstitial clusters and single interstitials play dominant roles in oxygen diffusion while other larger clusters have negligible contributions. However, the formation, coalescence, and dissociation of these larger clusters indirectly affects the overall oxygen diffusion due to their interactions with mono and di-interstitials, thus providing an explanation of the experimental observation of saturation or even drop of oxygen diffusivity at high off-stoichiometry.

  15. Oxygen transport in off-stoichiometric uranium dioxide mediated by defect clustering dynamics

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yu, Jianguo; Bai, Xian -Ming; El-Azab, Anter; Allen, Todd R.

    2015-03-05

    In this study, oxygen transport is central to many properties of oxides such as stoichiometric changes, phase transformation and ionic conductivity. In this paper, we report a mechanism for oxygen transport in uranium dioxide (UO2) in which the kinetics is mediated by defect clustering dynamics. In particular, the kinetic Monte Carlo (KMC) method has been used to investigate the kinetics of oxygen transport in UO2 under the condition of creation and annihilation of oxygen vacancies and interstitials as well as oxygen interstitial clustering, with variable offstoichiometry and temperature conditions. It is found that in hypo-stoichiometric UO2-x, oxygen transport is wellmore » described by the vacancy diffusion mechanism while in hyper-stoichiometric UO2+x, oxygen interstitial cluster diffusion contributes significantly to oxygen transport kinetics, particularly at high temperatures and high off-stoichiometry levels. It is also found that diinterstitial clusters and single interstitials play dominant roles in oxygen diffusion while other larger clusters have negligible contributions. However, the formation, coalescence and dissociation of these larger clusters indirectly affects the overall oxygen diffusion due to their interactions with mono and di-interstitials, thus providing a explanation of the experimental observation of saturation or even drop of oxygen diffusivity at high off-stoichiometry.« less

  16. Observation of complete space-charge-limited transport in metal-oxide-graphene heterostructure

    SciTech Connect (OSTI)

    Chen, Wei; Wang, Fei; Fang, Jingyue; Wang, Guang; Qin, Shiqiao; Zhang, Xue-Ao E-mail: xazhang@nudt.edu.cn; Wang, Chaocheng; Wang, Li E-mail: xazhang@nudt.edu.cn

    2015-01-12

    The metal-oxide-graphene heterostructures have abundant physical connotations. As one of the most important physical properties, the electric transport property of the gold-chromium oxide-graphene heterostructure has been studied. The experimental measurement shows that the conductive mechanism is dominated by the space-charge-limited transport, a kind of bulk transport of an insulator with charge traps. Combining the theoretical analysis, some key parameters such as the carrier mobility and trap energy also are obtained. The study of the characteristics of the metal-oxide-graphene heterostructures is helpful to investigate the graphene-based electronic and photoelectric devices.

  17. Charge transport and memristive properties of graphene quantum dots embedded in poly(3-hexylthiophene) matrix

    SciTech Connect (OSTI)

    Cosmin Obreja, Alexandru; Cristea, Dana; Radoi, Antonio; Gavrila, Raluca; Comanescu, Florin; Kusko, Cristian; Mihalache, Iuliana

    2014-08-25

    We show that graphene quantum dots (GQD) embedded in a semiconducting poly(3-hexylthiophene) polymeric matrix act as charge trapping nanomaterials. In plane current-voltage (I-V) measurements of thin films realized from this nanocomposite deposited on gold interdigitated electrodes revealed that the GQD enhanced dramatically the hole transport. I-V characteristics exhibited a strong nonlinear behavior and a pinched hysteresis loop, a signature of a memristive response. The transport properties of this nanocomposite were explained in terms of a trap controlled space charge limited current mechanism.

  18. Charge carrier transport and separation in pristine and nitrogen-doped graphene nanowiggle heterostructures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lherbier, Aurélien; Liang, Liangbo; Charlier, Jean -Christophe; Meunier, Vincent

    2015-09-03

    Electronic structure methods are combined into a multiscale framework to investigate the electronic transport properties of recently synthesized pristine and nitrogen-doped graphene nanowiggles and their heterojunctions deposited on a substrate. The real-space Kubo-Greenwood transport calculations reveal that charge carrier mobilities reach values up to 1,000 cm2 V–1 s–1 as long as the amount of substrate impurities is sufficiently low. Owing to their type-II band alignment, atomically precise heterostructures between pristine and N-doped graphene nanowiggles are predicted to be excellent candidates for charge carrier separation devices with potential in photoelectric and photocatalytic water splitting applications.

  19. Surface-Plasmon Assisted Exciton and Charge Carrier Transport in One

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Dimensional Nanostructures | MIT-Harvard Center for Excitonics Surface-Plasmon Assisted Exciton and Charge Carrier Transport in One Dimensional Nanostructures February 21, 2013 at 3pm/36-428 Andrei Piryatinski Physics of Condensed Matter and Complex Systems Group, Los Alamos National Laboratory Piryatinski-photo_000 Abstract: The ability to precisely control optical and transport properties of nanostructured materials opens up possibility of their use as functional materials in a broad range

  20. Space charge compensation in the Linac4 low energy beam transport line with negative hydrogen ions

    SciTech Connect (OSTI)

    Valerio-Lizarraga, Cristhian A.; Lallement, Jean-Baptiste; Lettry, Jacques; Scrivens, Richard; Leon-Monzon, Ildefonso; Midttun, ystein; University of Oslo, Oslo

    2014-02-15

    The space charge effect of low energy, unbunched ion beams can be compensated by the trapping of ions or electrons into the beam potential. This has been studied for the 45 keV negative hydrogen ion beam in the CERN Linac4 Low Energy Beam Transport using the package IBSimu [T. Kalvas et al., Rev. Sci. Instrum. 81, 02B703 (2010)], which allows the space charge calculation of the particle trajectories. The results of the beam simulations will be compared to emittance measurements of an H{sup ?} beam at the CERN Linac4 3 MeV test stand, where the injection of hydrogen gas directly into the beam transport region has been used to modify the space charge compensation degree.

  1. Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires.

    SciTech Connect (OSTI)

    Armstrong, Andrew M.; Aubry, Sylvie; Shaner, Eric Arthur; Siegal, Michael P.; Li, Qiming; Jones, Reese E.; Westover, Tyler; Wang, George T.; Zhou, Xiao Wang; Talin, Albert Alec; Bogart, Katherine Huderle Andersen; Harris, C. Thomas; Huang, Jian Yu

    2010-09-01

    We present the results of a three year LDRD project that focused on understanding the impact of defects on the electrical, optical and thermal properties of GaN-based nanowires (NWs). We describe the development and application of a host of experimental techniques to quantify and understand the physics of defects and thermal transport in GaN NWs. We also present the development of analytical models and computational studies of thermal conductivity in GaN NWs. Finally, we present an atomistic model for GaN NW electrical breakdown supported with experimental evidence. GaN-based nanowires are attractive for applications requiring compact, high-current density devices such as ultraviolet laser arrays. Understanding GaN nanowire failure at high-current density is crucial to developing nanowire (NW) devices. Nanowire device failure is likely more complex than thin film due to the prominence of surface effects and enhanced interaction among point defects. Understanding the impact of surfaces and point defects on nanowire thermal and electrical transport is the first step toward rational control and mitigation of device failure mechanisms. However, investigating defects in GaN NWs is extremely challenging because conventional defect spectroscopy techniques are unsuitable for wide-bandgap nanostructures. To understand NW breakdown, the influence of pre-existing and emergent defects during high current stress on NW properties will be investigated. Acute sensitivity of NW thermal conductivity to point-defect density is expected due to the lack of threading dislocation (TD) gettering sites, and enhanced phonon-surface scattering further inhibits thermal transport. Excess defect creation during Joule heating could further degrade thermal conductivity, producing a viscous cycle culminating in catastrophic breakdown. To investigate these issues, a unique combination of electron microscopy, scanning luminescence and photoconductivity implemented at the nanoscale will be used in

  2. Link between hopping models and percolation scaling laws for charge transport in mixtures of small molecules

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ha, Dong -Gwang; Kim, Jang -Joo; Baldo, Marc A.

    2016-04-29

    Mixed host compositions that combine charge transport materials with luminescent dyes offer superior control over exciton formation and charge transport in organic light emitting devices (OLEDs). Two approaches are typically used to optimize the fraction of charge transport materials in a mixed host composition: either an empirical percolative model, or a hopping transport model. We show that these two commonly-employed models are linked by an analytic expression which relates the localization length to the percolation threshold and critical exponent. The relation is confirmed both numerically and experimentally through measurements of the relative conductivity of Tris(4-carbazoyl-9-ylphenyl) amine (TCTA) :1,3-bis(3,5-dipyrid-3-yl-phenyl) benzene (BmPyPb)more » mixtures with different concentrations, where the TCTA plays a role as hole conductor and the BmPyPb as hole insulator. Furthermore, the analytic relation may allow the rational design of mixed layers of small molecules for high-performance OLEDs.« less

  3. Mesoscale Phase-Field Modeling of Charge Transport in Nanocomposite Electrodes for Lithium-ion Batteries

    SciTech Connect (OSTI)

    Hu, Shenyang Y.; Li, Yulan; Rosso, Kevin M.; Sushko, Maria L.

    2013-01-10

    A phase-field model is developed to investigate the influence of microstructure, thermodynamic and kinetic properties, and charging conditions on charged particle transport in nanocomposite electrodes. Two sets of field variables are used to describe the microstructure. One is comprised of the order parameters describing size, orientation and spatial distributions of nanoparticles, and the other is comprised of the concentrations of mobile species. A porous nanoparticle microstructure filled with electrolyte is taken as a model system to test the phase-field model. Inhomogeneous and anisotropic dielectric constants and mobilities of charged particles, and stresses associated with lattice deformation due to Li-ion insertion/extraction are considered in the model. Iteration methods are used to find the elastic and electric fields in an elastically and electrically inhomogeneous medium. The results demonstrate that the model is capable of predicting charge separation associated with the formation of a double layer at the electrochemical interface between solid and electrolyte, and the effect of microstructure, inhomogeneous and anisotropic thermodynamic and kinetic properties, charge rates, and stresses on voltage versus current density and capacity during charging and discharging.

  4. Charge transport mechanisms of graphene/semiconductor Schottky barriers: A theoretical and experimental study

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Xu, Gengzhao; Shi, Lin; Fan, Yingmin; Yang, Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Xu, Ke, E-mail: kxu2006@sinano.ac.cn; Wang, Jianfeng; Ren, Guoqiang [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-01-07

    Graphene has been proposed as a material for semiconductor electronic and optoelectronic devices. Understanding the charge transport mechanisms of graphene/semiconductor Schottky barriers will be crucial for future applications. Here, we report a theoretical model to describe the transport mechanisms at the interface of graphene and semiconductors based on conventional semiconductor Schottky theory and a floating Fermi level of graphene. The contact barrier heights can be estimated through this model and be close to the values obtained from the experiments, which are lower than those of the metal/semiconductor contacts. A detailed analysis reveals that the barrier heights are as the function of the interface separations and dielectric constants, and are influenced by the interfacial states of semiconductors. Our calculations show how this behavior of lowering barrier heights arises from the Fermi level shift of graphene induced by the charge transfer owing to the unique linear electronic structure.

  5. Enhanced Charge Transport in Dissolved Polysulfide Li-S Cells with

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Supramolecular Redox Mediators - Joint Center for Energy Storage Research September 15, 2015, Research Highlights Enhanced Charge Transport in Dissolved Polysulfide Li-S Cells with Supramolecular Redox Mediators Schematic of nanostructured PBI 1 redox mediators in a Li-S battery, SEM image of the nanofiber morphology, reduced overpotential and 31 percent increase in S utilization at C/8, and cycling at C/4. Scientific Achievement A highly collaborative team of theorists and experimentalists

  6. A charge carrier transport model for donor-acceptor blend layers

    SciTech Connect (OSTI)

    Fischer, Janine Widmer, Johannes; Koerner, Christian; Vandewal, Koen; Leo, Karl; Kleemann, Hans; Tress, Wolfgang; Riede, Moritz

    2015-01-28

    Highly efficient organic solar cells typically comprise donor-acceptor blend layers facilitating effective splitting of excitons. However, the charge carrier mobility in the blends can be substantially smaller than in neat materials, hampering the device performance. Currently, available mobility models do not describe the transport in blend layers entirely. Here, we investigate hole transport in a model blend system consisting of the small molecule donor zinc phthalocyanine (ZnPc) and the acceptor fullerene C{sub 60} in different mixing ratios. The blend layer is sandwiched between p-doped organic injection layers, which prevent minority charge carrier injection and enable exploiting diffusion currents for the characterization of exponential tail states from a thickness variation of the blend layer using numerical drift-diffusion simulations. Trap-assisted recombination must be considered to correctly model the conductivity behavior of the devices, which are influenced by local electron currents in the active layer, even though the active layer is sandwiched in between p-doped contacts. We find that the density of deep tail states is largest in the devices with 1:1 mixing ratio (E{sub t} = 0.14 eV, N{sub t} = 1.2 × 10{sup 18 }cm{sup −3}) directing towards lattice disorder as the transport limiting process. A combined field and charge carrier density dependent mobility model are developed for this blend layer.

  7. Design of the low energy beam transport line between CARIBU and the EBIS charge breeder

    SciTech Connect (OSTI)

    Perry, A.; Ostroumov, P. N.; Barcikowski, A.; Dickerson, C.; Kondrashev, S. A.; Mustapha, B.; Savard, G.

    2015-01-09

    An Electron Beam Ion Source Charge Breeder (EBIS-CB) has been developed to breed radioactive beams from the CAlifornium Rare Isotope Breeder Upgrade (CARIBU) facility at ATLAS. The EBIS-CB will replace the existing ECR charge breeder to increase the intensity and improve the purity of reaccelerated radioactive ion beams. The EBIS-CB is in the final stage of off-line commissioning. Currently, we are developing a low energy beam transport (LEBT) system to transfer CARIBU beams to the EBIS-CB. As was originally planned, an RFQ cooler-buncher will precede the EBIS-CB. Recently, it was decided to include a multi-reflection time-of-flight (MR-TOF) mass-spectrometer following the RFQ. MR-TOF is a relatively new technology used to purify beams with a mass-resolving power up to 310{sup 5} as was demonstrated in experiments at CERN/ISOLDE. Very high purity singly-charged radioactive ion beams will be injected into the EBIS for charge breeding and due to its inherent properties, the EBIS-CB will maintain the purity of the charge bred beams. Possible contamination of residual gas ions will be greatly suppressed by achieving ultra-high vacuum in the EBIS trap. This paper will present and discuss the design of the LEBT and the overall integration of the EBIS-CB into ATLAS.

  8. Intrinsic SiO{sub x}-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

    SciTech Connect (OSTI)

    Chang, Yao-Feng Chen, Ying-Chen; Chen, Yen-Ting; Wang, Yanzhen; Xue, Fei; Zhou, Fei; Lee, Jack C.; Fowler, Burt

    2014-07-28

    Multilevel programing and charge transport characteristics of intrinsic SiO{sub x}-based resistive switching memory are investigated using TaN/SiO{sub x}/n{sup ++}Si (MIS) and TiW/SiO{sub x}/TiW (MIM) device structures. Current transport characteristics of high- and low-resistance states (HRS and LRS) are studied in both device structures during multilevel operation. Analysis of device thermal response demonstrates that the effective electron energy barrier is strongly dependent on the resistance of the programed state, with estimates of 0.1?eV in the LRS and 0.6?eV in the HRS. Linear data fitting and conductance analyses indicate Poole-Frenkel emission or hopping conductance in the low-voltage region, whereas Fowler-Nordheim (F-N) or trap-assisted tunneling (TAT) is indicated at moderate voltage. Characterizations using hopping transport lead to hopping distance estimates of ?1?nm in the LRS for both device structures. Relative permittivity values (?{sub r}) were extracted using the Poole-Frenkel formulism and estimates of local filament temperature, where ?{sub r} values were ?80 in the LRS and ?4 in the HRS, suggesting a strongly polarized medium in the LRS. The onset of F-N tunneling or TAT corresponds to an observed overshoot in the I-V response with an estimated threshold of 1.6??0.2?V, in good agreement with reported electro-luminescence results for LRS devices. Resistive switching is discussed in terms of electrochemical reactions between common SiO{sub 2} defects, and specific defect energy levels are assigned to the dominant transitions in the I-V response. The overshoot response in the LRS is consistent with TAT through either the E?' oxygen vacancy or the hydrogen bridge defect, both of which are reported to have an effective bandgap of 1.7?eV. The SET threshold at ?2.5?V is modeled as hydrogen release from the (Si-H){sub 2} defect to generate the hydrogen bridge, and the RESET transition is modeled as an electrochemical reaction that re-forms (Si

  9. Redox probing study of the potential dependence of charge transport through Li2O2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Knudsen, Kristian B.; Luntz, Alan C.; Jensen, Søren H.; Vegge, Tejs; Hjelm, Johan

    2015-11-20

    In the field of energy storage devices the pursuit for cheap, high energy density, reliable secondary batteries is at the top of the agenda. The Li–O2 battery is one of the possible technologies that, in theory, should be able to close the gap, which exists between the present state-of-the-art Li-ion technologies and the demand placed on batteries by technologies such as electrical vehicles. Here we present a redox probing study of the charge transfer across the main deposition product lithium peroxide, Li2O2, in the Li–O2 battery using outer-sphere redox shuttles. The change in heterogeneous electron transfer exchange rate as amore » function of the potential and the Li2O2 layer thickness (~depth-of-discharge) was determined using electrochemical impedance spectroscopy. In addition, the attenuation of the electron transfer exchange rate with film thickness is dependent on the probing potential, providing evidence that hole transport is the dominant process for charge transfer through Li2O2 and showing that the origin of the sudden death observed upon discharge is due to charge transport limitations.« less

  10. Ionic charge transport between blockages: Sodium cation conduction in freshly excised bulk brain tissue

    SciTech Connect (OSTI)

    Emin, David; Akhtari, Massoud; Ellingson, B. M.; Mathern, G. W.

    2015-08-15

    We analyze the transient-dc and frequency-dependent electrical conductivities between blocking electrodes. We extend this analysis to measurements of ions’ transport in freshly excised bulk samples of human brain tissue whose complex cellular structure produces blockages. The associated ionic charge-carrier density and diffusivity are consistent with local values for sodium cations determined non-invasively in brain tissue by MRI (NMR) and diffusion-MRI (spin-echo NMR). The characteristic separation between blockages, about 450 microns, is very much shorter than that found for sodium-doped gel proxies for brain tissue, >1 cm.

  11. Native defects in Tl6SI4: Density functional calculations

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shi, Hongliang; Du, Mao -Hua

    2015-05-05

    In this study, Tl6SI4 is a promising room-temperature semiconductor radiation detection material. Here, we report density functional calculations of native defects and dielectric properties of Tl6SI4. Formation energies and defect levels of native point defects and defect complexes are calculated. Donor-acceptor defect complexes are shown to be abundant in Tl6SI4. High resistivity can be obtained by Fermi level pinning by native donor and acceptor defects. Deep donors that are detrimental to electron transport are identified and methods to mitigate such problem are discussed. Furthermore, we show that mixed ionic-covalent character of Tl6SI4 gives rise to enhanced Born effective charges andmore » large static dielectric constant, which provides effective screening of charged defects and impurities.« less

  12. Thermal transport in UO2 with defects and fission products by molecular dynamics simulations

    SciTech Connect (OSTI)

    Liu, Xiang-Yang; Cooper, Michael William Donald; Mcclellan, Kenneth James; Lashley, Jason Charles; Byler, Darrin David; Stanek, Christopher Richard; Andersson, Anders David Ragnar

    2015-10-14

    The importance of the thermal transport in nuclear fuel has motivated a wide range of experimental and modelling studies. In this report, the reduction of thermal transport in UO2 due to defects and fission products has been investigated using non-equilibrium MD simulations, with two sets of empirical potentials for studying the degregation of UO2 thermal conductivity including a Buckingham type interatomic potential and a recently developed EAM type interatomic potential. Additional parameters for U5+ and Zr4+ in UO2 have been developed for the EAM potential. The thermal conductivity results from MD simulations are then corrected for the spin-phonon scattering through Callaway model formulations. To validate the modelling results, comparison was made with experimental measurements on single crystal hyper-stoichiometric UO2+x samples.

  13. Elastic tunneling charge transport mechanisms in silicon quantum dots /SiO{sub 2} thin films and superlattices

    SciTech Connect (OSTI)

    Illera, S. Prades, J. D.; Cirera, A.

    2015-05-07

    The role of different charge transport mechanisms in Si/SiO{sub 2} structures has been studied. A theoretical model based on the Transfer Hamiltonian Formalism has been developed to explain experimental current trends in terms of three different elastic tunneling processes: (1) trap assisted tunneling; (2) transport through an intermediate quantum dot; and (3) direct tunneling between leads. In general, at low fields carrier transport is dominated by the quantum dots whereas, for moderate and high fields, transport through deep traps inherent to the SiO{sub 2} is the most relevant process. Besides, current trends in Si/SiO{sub 2} superlattice structure have been properly reproduced.

  14. Studies on low energy beam transport for high intensity high charged ions at IMP

    SciTech Connect (OSTI)

    Yang, Y. Lu, W.; Fang, X.; University of Chinese Academy of Sciences, Beijing 100039 ; Sun, L. T.; Hu, Q.; Cao, Y.; Feng, Y. C.; Zhang, X. Z.; Zhao, H. W.; Xie, D. Z.

    2014-02-15

    Superconducting Electron Cyclotron Resonance ion source with Advanced design in Lanzhou (SECRAL) is an advanced fully superconducting ECR ion source at IMP designed to be operational at the microwave frequency of 1824 GHz. The existing SECRAL beam transmission line is composed of a solenoid lens and a 110 analyzing magnet. Simulations of particle tracking with 3D space charge effect and realistic 3D magnetic fields through the line were performed using particle-in-cell code. The results of the beam dynamics show that such a low energy beam is very sensitive to the space charge effect and significantly suffers from the second-order aberration of the analyzing magnet resulting in large emittance. However, the second-order aberration could be reduced by adding compensating sextupole components in the beam line. On this basis, a new 110 analyzing magnet with relatively larger acceptance and smaller aberration is designed and will be used in the design of low energy beam transport line for a new superconducting ECR ion source SECRAL-II. The features of the analyzer and the corresponding beam trajectory calculation will be detailed and discussed in this paper.

  15. A new approach to calculate charge carrier transport mobility in organic molecular crystals from imaginary time path integral simulations

    SciTech Connect (OSTI)

    Song, Linze; Shi, Qiang

    2015-05-07

    We present a new non-perturbative method to calculate the charge carrier mobility using the imaginary time path integral approach, which is based on the Kubo formula for the conductivity, and a saddle point approximation to perform the analytic continuation. The new method is first tested using a benchmark calculation from the numerical exact hierarchical equations of motion method. Imaginary time path integral Monte Carlo simulations are then performed to explore the temperature dependence of charge carrier delocalization and mobility in organic molecular crystals (OMCs) within the Holstein and Holstein-Peierls models. The effects of nonlocal electron-phonon interaction on mobility in different charge transport regimes are also investigated.

  16. Computer Simulation of Defects and Oxygen Transport in Yttria-Stabilized Zirconia

    SciTech Connect (OSTI)

    Devanathan, Ram; Weber, William J.; Singhal, Subhash C.; Gale, Julian D.

    2006-06-15

    We have used molecular dynamics simulations and energy minimization calculations to examine defect energetics and oxygen diffusion in yttria-stabilized zirconia (YSZ). Oxygen vacancies prefer to be second nearest neighbors to yttrium dopants. The oxygen diffusion coefficient shows a peak at 8 mole % yttria consistent with experimental findings. The activation energy for oxygen diffusion varies from 0.6 to 1.0 eV depending on the yttria content. The Y-Vo-Y complex with a binding energy of -0.85 eV may play an important role in any conductivity degradation of YSZ.

  17. Dopant effects on charge transport to enhance performance of phosphorescent white organic light emitting diodes

    SciTech Connect (OSTI)

    Zhu, Liping; Chen, Jiangshan; Ma, Dongge

    2015-11-07

    We compared the performance of phosphorescent white organic light emitting diodes (WOLEDs) with red-blue-green and green-blue-red sequent emissive layers. It was found that the influence of red and green dopants on electron and hole transport in emissive layers leads to the large difference in the efficiency of fabricated WOLEDs. This improvement mechanism is well investigated by the current density-voltage characteristics of single-carrier devices based on dopant doped emissive layers and the comparison of electroluminescent and photoluminescence spectra, and attributed to the different change of charge carrier transport by the dopants. The optimized device achieves a maximum power efficiency, current efficiency, and external quantum efficiency of 37.0 lm/W, 38.7 cd/A, and 17.7%, respectively, which are only reduced to 32.8 lm/W, 38.5 cd/A, and 17.3% at 1000 cd/m{sup 2} luminance. The critical current density is as high as 210 mA/cm{sup 2}. It can be seen that the efficiency roll-off in phosphorescent WOLEDs can be well improved by effectively designing the structure of emissive layers.

  18. Charge Recombination, Transport Dynamics, and Interfacial Effects in Organic Solar Cells

    SciTech Connect (OSTI)

    Heeger, Alan; Bazan, Guillermo; Nguyen, Thuc-Quyen; Wudl, Fred

    2015-02-27

    The need for renewable sources of energy is well known. Conversion of sunlight to electricity using solar cells is one of the most important opportunities for creating renewable energy sources. The research carried out under DE-FG02-08ER46535 focused on the science and technology of “Plastic” solar cells comprised of organic (i.e. carbon based) semiconductors. The Bulk Heterojunction concept involves a phase separated blend of two organic semiconductors each with dimensions in the nano-meter length scale --- one a material that functions as a donor for electrons and the other a material that functions as an acceptor for electrons. The nano-scale inter-penetrating network concept for “Plastic” solar cells was created at UC Santa Barbara. A simple measure of the impact of this concept can be obtained from a Google search which gives 244,000 “hits” for the Bulk Heterojunction solar cell. Research funded through this program focused on four major areas: 1. Interfacial effects in organic photovoltaics, 2. Charge transfer and photogeneration of mobile charge carriers in organic photovoltaics, 3. Transport and recombination of the photogenerated charge carriers in organic photovoltaics, 4. Synthesis of novel organic semiconducting polymers and semiconducting small molecules, including conjugated polyelectrolytes. Following the discovery of ultrafast charge transfer at UC Santa Barbara in 1992, the nano-organic (Bulk Heterojunction) concept was formulated. The need for a morphology comprising two interpenetrating bicontinuous networks was clear: one network to carry the photogenerated electrons (negative charge) to the cathode and one network to carry the photo-generated holes (positive charge) to the anode. This remarkable self-assembled network morphology has now been established using Transmission electron Microscopy (TEM) either in the Phase Contrast mode or via TEM-Tomography. The steps involved in delivering power from a solar cell to an external circuit

  19. Charge carrier transport mechanisms in perovskite CdTiO{sub 3} fibers

    SciTech Connect (OSTI)

    Imran, Z.; Rafiq, M. A. Hasan, M. M.

    2014-06-15

    Electrical transport properties of electrospun cadmium titanate (CdTiO{sub 3}) fibers have been investigated using ac and dc measurements. Air annealing of as spun fibers at 1000?C yielded the single phase perovskite fibers having diameter ?600 nm - 800 nm. Both the ac and dc electrical measurements were carried out at temperatures from 200 K 420 K. The complex impedance plane plots revealed a single semicircular arc which indicates the interfacial effect due to grain boundaries of fibers. The dielectric properties obey the Maxwell-Wagner theory of interfacial polarization. In dc transport study at low voltages, data show Ohmic like behavior followed by space charge limited current (SCLC) with traps at higher voltages at all temperatures (200 K 420 K). Trap density in our fibers system is N{sub t} = 6.27 10{sup 17} /cm{sup 3}. Conduction mechanism in the sample is governed by 3-D variable range hopping (VRH) from 200 K 300 K. The localized density of states were found to be N(E{sub F}) = 5.51 10{sup 21} eV{sup ?1} cm{sup ?3} at 2 V. Other VRH parameters such as hopping distance (R{sub hop}) and hopping energy (W{sub hop}) were also calculated. In the high temperature range of 320 K 420 K, conductivity follows the Arrhenius law. The activation energy found at 2 V is 0.10 eV. Temperature dependent and higher values of dielectric constant make the perovskite CdTiO{sub 3} fibers efficient material for capacitive energy storage devices.

  20. Influence of surface charge on the transport characteristics of nanowire-field effect transistors in liquid environments

    SciTech Connect (OSTI)

    Nozaki, Daijiro E-mail: research@nano.tu-dresden.de; Kunstmann, Jens; Zörgiebel, Felix; Cuniberti, Gianaurelio

    2015-05-18

    One dimensional nanowire field effect transistors (NW-FETs) are a promising platform for sensor applications. The transport characteristics of NW-FETs are strongly modified in liquid environment due to the charging of surface functional groups accompanied with protonation or deprotonation. In order to investigate the influence of surface charges and ionic concentrations on the transport characteristics of Schottky-barrier NW-FETs, we have combined the modified Poisson-Boltzmann theory with the Landauer-Büttiker transport formalism. For a typical device, the model is able to capture the reduction of the sensitivity of NW-FETs in ionic solutions due to the screening from counter ions as well as a local gating from surface functional groups. Our approach allows to model, to investigate, and to optimize realistic Schottky-barrier NW-FET devices in liquid environment.

  1. Gate dielectric degradation: Pre-existing vs. generated defects

    SciTech Connect (OSTI)

    Veksler, Dmitry E-mail: gennadi.bersuker@sematech.org; Bersuker, Gennadi E-mail: gennadi.bersuker@sematech.org

    2014-01-21

    We consider the possibility that degradation of the electrical characteristics of high-k gate stacks under low voltage stresses of practical interest is caused primarily by activation of pre-existing defects rather than generation of new ones. In nFETs in inversion, in particular, defect activation is suggested to be associated with the capture of an injected electron: in this charged state, defects can participate in a fast exchange of charge carriers with the carrier reservoir (substrate or gate electrode) that constitutes the physical process underlying a variety of electrical measurements. The degradation caused by the activation of pre-existing defects, as opposed to that of new defect generation, is both reversible and exhibits a tendency to saturate through the duration of stress. By using the multi-phonon assisted charge transport description, it is demonstrated that the trap activation concept allows reproducing a variety of experimental results including stress time dependency of the threshold voltage, leakage current, charge pumping current, and low frequency noise. Continuous, long-term degradation described by the power law time dependency is shown to be determined by the activation of defects located in the interfacial SiO{sub 2} layer of the high-k gate stacks. The findings of this study can direct process optimization efforts towards reduction of as-grown precursors of the charge trapping defects as the major factor affecting reliability.

  2. Mechanisms of charge transport in anisotype n-TiO{sub 2}/p-CdTe heterojunctions

    SciTech Connect (OSTI)

    Brus, V. V.; Ilashchuk, M. I.; Kovalyuk, Z. D.; Maryanchuk, P. D.; Ulyanytsky, K. S.; Gritsyuk, B. N.

    2011-08-15

    Surface-barrier anisotype n-TiO{sub 2}/p-CdTe heterojunctions are fabricated by depositing thin titanium-dioxide films on a freshly cleaved surface of single-crystalline cadmium-telluride wafers by reactive magnetron sputtering. It is established that the electric current through the heterojunctions under investigation is formed by generation-recombination processes in the space-charge region via a deep energy level and tunneling through the potential barrier. The depth and nature of the impurity centers involved in the charge transport are determined.

  3. Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers

    SciTech Connect (OSTI)

    Niraula, M.; Yasuda, K.; Wajima, Y.; Yamashita, H.; Tsukamoto, Y.; Suzuki, Y.; Matsumoto, M.; Takai, N.; Tsukamoto, Y.; Agata, Y.

    2013-10-28

    Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors, fabricated by growing p-and n-type CdTe epilayers on (211) n{sup +}-Si substrates using metalorganic vapor-phase epitaxy (MOVPE), were studied by analyzing current-voltage characteristics measured at various temperatures. The diode fabricated shows good rectification properties, however, both forward and reverse biased currents deviate from their ideal behavior. The forward current exhibits typical feature of multi-step tunneling at lower biases; however, becomes space charge limited type when the bias is increased. On the other hand, the reverse current exhibits thermally activated tunneling-type current. It was found that trapping centers at the p-CdTe/n-CdTe junction, which were formed due to the growth induced defects, determine the currents of this diode, and hence limit the performance of the nuclear radiation detectors developed.

  4. KINETIC MONTE CARLO SIMULATIONS OF THE EFFECTS OF 1-D DEFECT TRANSPORT ON DEFECT REACTION KINETICS AND VOID LATTICE FORMATION DURING IRRADIATION

    SciTech Connect (OSTI)

    Heinisch, Howard L.; Singh, Bachu N.

    2003-03-01

    Within the last decade molecular dynamics simulations of displacement cascades have revealed that glissile clusters of self-interstitial crowdions are formed directly in cascades. Also, under various conditions, a crowdion cluster can change its Burgers vector and glide along a different close-packed direction. In order to incorporate the migration properties of crowdion clusters into analytical rate theory models, it is necessary to describe the reaction kinetics of defects that migrate one-dimensionally with occasional changes in their Burgers vector. To meet this requirement, atomic-scale kinetic Monte Carlo (KMC) simulations have been used to study the defect reaction kinetics of one-dimensionally migrating crowdion clusters as a function of the frequency of direction changes, specifically to determine the sink strengths for such one-dimensionally migrating defects. The KMC experiments are used to guide the development of analytical expressions for use in reaction rate theories and especially to test their validity. Excellent agreement is found between the results of KMC experiments and the analytical expressions derived for the transition from one-dimensional to three-dimensional reaction kinetics. Furthermore, KMC simulations have been performed to investigate the significant role of crowdion clusters in the formation and stability of void lattices. The necessity for both one-dimensional migration and Burgers vectors changes for achieving a stable void lattice is demonstrated.

  5. Spin and charge transport in double-junction Fe/MgO/GaAs/MgO/Fe heterostructures

    SciTech Connect (OSTI)

    Wolski, S. Szczepa?ski, T.; Dugaev, V. K.; Barna?, J.; Landgraf, B.; Slobodskyy, T.; Hansen, W.

    2015-01-28

    We present theoretical and experimental results on tunneling current in single Fe/MgO/GaAs and double Fe/MgO/GaAs/MgO/Fe tunnel junctions. The charge and spin currents are calculated as a function of external voltage for different sets of parameters characterizing the semiconducting GaAs layer. Transport characteristics of a single Fe/MgO/GaAs junction reveal typical diode as well as spin diode features. The results of numerical calculations are compared with current-voltage characteristics measured experimentally for double tunnel junction structures, and a satisfactory agreement of the theoretical and experimental results has been achieved.

  6. Femtosecond x rays link melting of charge-density wave correlations and light-enhanced coherent transport in YBa2Cu3O6.6

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Först, M.; Frano, A.; Kaiser, S.; Mankowsky, R.; Hunt, C. R.; Turner, J. J.; Dakovski, G. L.; Minitti, M. P.; Robinson, J.; Loew, T.; et al

    2014-11-17

    In this study, we use femtosecond resonant soft x-ray diffraction to measure the optically stimulated ultrafast changes of charge density wave correlations in underdoped YBa₂Cu₃O₆.₆. We find that when coherent interlayer transport is enhanced by optical excitation of the apical oxygen distortions, at least 50% of the in-plane charge density wave order is melted. These results indicate that charge ordering and superconductivity may be competing up to the charge ordering transition temperature, with the latter becoming a hidden phase that is accessible only by nonlinear phonon excitation.

  7. Femtosecond x-rays link melting of charge density wave correlations and light-enhanced coherent transport in YBa?Cu?O?.?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Forst, M.; Hill, J. P.; Frano, A.; Kaiser, S.; Mankowsky, R.; Hunt, C. R.; Turner, J. J.; Dakovski, G. L.; Minitti, M. P.; Robinson, J.; et al

    2014-11-17

    We use femtosecond resonant soft x-ray diffraction to measure the optically stimulated ultrafast changes of charge density wave correlations in underdoped YBa?Cu?O?.?. We find that when coherent interlayer transport is enhanced by optical excitation of the apical oxygen distortions, at least 50% of the in-plane charge density wave order is melted. These results indicate that charge ordering and superconductivity may be competing up to the charge ordering transition temperature, with the latter becoming a hidden phase that is accessible only by nonlinear phonon excitation.

  8. Charged and neutral particle transport methods and applications: The CALOR code system

    SciTech Connect (OSTI)

    Gabriel, T.A.; Charlton, L.A.

    1997-04-01

    The CALOR code system, which is a complete radiation transport code system, is described with emphasis on the high-energy (> 20 MeV) nuclear collision models. Codes similar to CALOR are also briefly discussed. A current application using CALOR which deals with the development of the National Spallation Neutron Source is also given.

  9. Influence of plasma loss area on transport of charged particles through a transverse magnetic field

    SciTech Connect (OSTI)

    Das, B. K.; Chakraborty, M. [Centre of Plasma Physics-Institute for Plasma Research, Tepesia, Kamrup, Assam (India); Bandyopadhyay, M. [ITER-India, Institute for Plasma Research, Gandhinagar, Gujarat (India)

    2012-01-15

    Plasma transport in a double plasma device from the source region to the target region through a physical window comprising of electrically grounded magnet channels (filled with permanent magnet bars) for transverse magnetic field (TMF) and a pair of stainless steel (SS) plates is studied and presented in this manuscript. The study has relevance in negative ion source research and development where both TMF created by magnet channels and bias plate are used. The experiment is performed in two stages. In the first stage, a TMF is introduced between the two regions along with the SS plates, and corresponding plasma parameter data in the two regions are recorded by changing the distance between the TMF channels. In the second stage, the TMF is withdrawn from the system, and corresponding data are taken by changing the separation between the SS plates. The experimental results are then compared with a theoretical model. In the presence of TMF, where electrons are magnetized and ions are un-magnetized, it is observed that plasma transport perpendicular to the TMF is dominated by the ambipolar diffusion of ions. In the absence of TMF, plasma is un-magnetized, and plasma transport through the SS window aperture is almost independent of open area of the SS window.

  10. Influence of nanostructure on charge transport in RuO{sub 2} thin films

    SciTech Connect (OSTI)

    Steeves, M. M.; Lad, R. J.

    2010-07-15

    Polycrystalline thin films of RuO{sub 2} were grown on fused-quartz substrates and a parametric study was carried out to probe the influence of film nanostructure on the four-point Van der Pauw resistivity and Hall coefficient. The films were grown via reactive rf magnetron sputtering of a Ru target in an Ar/O{sub 2} plasma using deposition rates from 0.27 to 3.5 A/s and substrate temperatures from 16 to 500 deg. C Room-temperature resistivities of the RuO{sub 2} films ranged from 58 to 360 {mu}{Omega} cm. Upon first heating following deposition, some films showed decreasing resistivity with increasing temperature, but the resistivities also decreased upon subsequent cooling suggesting that the annealing treatment reduces the film defect density. The temperature coefficient of resistance was found to be small (<0.001 K{sup -1}) in agreement with previous investigations. Hall coefficient measurements of the polycrystalline thin films demonstrated that either n-type or p-type majority carriers can be present depending on deposition conditions and the resulting nanostructure, in contrast to single-crystal RuO{sub 2}, which is an n-type metal. Grain size and homogeneous strain within the films were measured by x-ray diffraction and are correlated to the majority carrier type.

  11. Thermal influence on charge carrier transport in solar cells based on GaAs PN junctions

    SciTech Connect (OSTI)

    Osses-Márquez, Juan; Calderón-Muñoz, Williams R.

    2014-10-21

    The electron and hole one-dimensional transport in a solar cell based on a Gallium Arsenide (GaAs) PN junction and its dependency with electron and lattice temperatures are studied here. Electrons and heat transport are treated on an equal footing, and a cell operating at high temperatures using concentrators is considered. The equations of a two-temperature hydrodynamic model are written in terms of asymptotic expansions for the dependent variables with the electron Reynolds number as a perturbation parameter. The dependency of the electron and hole densities through the junction with the temperature is analyzed solving the steady-state model at low Reynolds numbers. Lattice temperature distribution throughout the device is obtained considering the change of kinetic energy of electrons due to interactions with the lattice and heat absorbed from sunlight. In terms of performance, higher values of power output are obtained with low lattice temperature and hot energy carriers. This modeling contributes to improve the design of heat exchange devices and thermal management strategies in photovoltaic technologies.

  12. The impact of disorder on charge transport in three dimensional quantum dot resonant tunneling structures

    SciTech Connect (OSTI)

    Puthen-Veettil, B. Patterson, R.; Knig, D.; Conibeer, G.; Green, M. A.

    2014-10-28

    Efficient iso-entropic energy filtering of electronic waves can be realized through nanostructures with three dimensional confinement, such as quantum dot resonant tunneling structures. Large-area deployment of such structures is useful for energy selective contacts but such configuration is susceptible to structural disorders. In this work, the transport properties of quantum-dot-based wide-area resonant tunneling structures, subject to realistic disorder mechanisms, are studied. Positional variations of the quantum dots are shown to reduce the resonant transmission peaks while size variations in the device are shown to reduce as well as broaden the peaks. Increased quantum dot size distribution also results in a peak shift to lower energy which is attributed to large dots dominating transmission. A decrease in barrier thickness reduces the relative peak height while the overall transmission increases dramatically due to lower series resistance. While any shift away from ideality can be intuitively expected to reduce the resonance peak, quantification allows better understanding of the tolerances required for fabricating structures based on resonant tunneling phenomena/.

  13. Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

    DOE Patents [OSTI]

    Rehak, Pavel; Gatti, Emilio

    1987-01-01

    A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

  14. Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

    DOE Patents [OSTI]

    Rehak, P.; Gatti, E.

    1984-02-24

    A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying functions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

  15. Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

    DOE Patents [OSTI]

    Rehak, P.; Gatti, E.

    1987-08-18

    A semiconductor charge transport device and method for making same are disclosed, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution. 16 figs.

  16. Influence of defects on the charge density wave of ([SnSe]1+?)1(VSe2)1 ferecrystals

    SciTech Connect (OSTI)

    Falmbigl, Matthias; Putzky, Daniel; Ditto, Jeffrey; Esters, Marco; Bauers, Sage R.; Ronning, Filip; Johnson, David C.

    2015-07-14

    A series of ferecrystalline compounds ([SnSe]1+?)1(VSe2)1 with varying Sn/V ratios were synthesized using the modulated elemental reactant technique. Temperature-dependent specific heat data reveal a phase transition at 102 K, where the heat capacity changes abruptly. An abrupt increase in electrical resistivity occurs at the same temperature, correlated with an abrupt increase in the Hall coefficient. Combined with the magnitude and nature of the specific heat discontinuity, this suggests that the transition is similar to the charge density wave transitions in transition metal dichalcogenides. An ordered intergrowth was formed over a surprisingly wide compositional range of Sn/V ratios of 0.89 ? 1 + ? ? 1.37. X-ray diffraction and transmission electron microscopy reveal the formation of various volume defects in the compounds in response to the nonstoichiometry. The electrical resistivity and Hall coefficient data of samples with different Sn/V ratios show systematic variation in the carrier concentration with the Sn/V ratio. There is no significant change in the onset temperature of the charge density wave transition, only a variation in the carrier densities before and after the transition. Given the sensitivity of the charge density wave transitions of transition metal dichalcogenides to variations in composition, it is very surprising that the charge density wave transition observed at 102 K for ([SnSe]1.15)1(VSe2)1 is barely influenced by the nonstoichiometry and structural defects. As a result, this might be a consequence of the two-dimensional nature of the structurally independent VSe2 layers.

  17. Novel Energy Sources -Material Architecture and Charge Transport in Solid State Ionic Materials for Rechargeable Li ion Batteries

    SciTech Connect (OSTI)

    Katiyar, Ram S; Gómez, M; Majumder, S B; Morell, G; Tomar, M S; Smotkin, E; Bhattacharya, P; Ishikawa, Y

    2009-01-19

    Since its introduction in the consumer market at the beginning of 1990s by Sony Corporation ‘Li-ion rechargeable battery’ and ‘LiCoO2 cathode’ is an inseparable couple for highly reliable practical applications. However, a separation is inevitable as Li-ion rechargeable battery industry demand more and more from this well serving cathode. Spinel-type lithium manganate (e.g., LiMn2O4), lithium-based layered oxide materials (e.g., LiNiO2) and lithium-based olivine-type compounds (e.g., LiFePO4) are nowadays being extensively studied for application as alternate cathode materials in Li-ion rechargeable batteries. Primary goal of this project was the advancement of Li-ion rechargeable battery to meet the future demands of the energy sector. Major part of the research emphasized on the investigation of electrodes and solid electrolyte materials for improving the charge transport properties in Li-ion rechargeable batteries. Theoretical computational methods were used to select electrodes and electrolyte material with enhanced structural and physical properties. The effect of nano-particles on enhancing the battery performance was also examined. Satisfactory progress has been made in the bulk form and our efforts on realizing micro-battery based on thin films is close to give dividend and work is progressing well in this direction.

  18. Improvement of charged particles transport across a transverse magnetic filter field by electrostatic trapping of magnetized electrons

    SciTech Connect (OSTI)

    Das, B. K. Hazarika, P.; Chakraborty, M.; Bandyopadhyay, M.

    2014-07-15

    A study on the transport of charged particles across a magnetic filter field has been carried out in a double plasma device (DPD) and presented in this manuscript. The DPD is virtually divided into two parts viz. source and target regions by a transverse magnetic field (TMF) which is constructed by inserting strontium ferrite magnets into two stainless steel rectangular tubes. Plasma electrons are magnetized but ions are unmagnetized inside the TMF region. Negative voltages are applied to the TMF tubes in order to reduce the loss of electrons towards them. Plasma is produced in the source region by filament discharge method and allowed to flow towards the target region through this negatively biased TMF. It is observed that in the target region, plasma density can be increased and electron temperature decreased with the help of negatively biased TMF. This observation is beneficial for negative ion source development. Plasma diffusion across the negatively biased TMF follows Bohm or anomalous diffusion process when negative bias voltage is very less. At higher negative bias, diffusion coefficient starts deviating from the Bohm diffusion value, associated with enhanced plasma flow in the target region.

  19. The role of transport processes of nonequilibrium charge carriers in radiative properties of arrays of InAs/GaAs quantum dots

    SciTech Connect (OSTI)

    Shkolnik, A. S. Savelyev, A. V.; Karachinsky, L. Ya.; Gordeev, N. Yu.; Seisyan, R. P.; Zegrya, G. G.; Pellegrini, S.; Buller, G. S.; Evtikhiev, V. P.

    2008-03-15

    The results of time-resolved photoluminescence studies of heterostructures containing monolayer arrays of InAs/GaAs quantum dots are presented. A two-component time dependence of intensity of photoluminescence from the ground state of quantum dots, with characteristic times of the slow component up to hundreds of nanoseconds and those of rapid one several nanoseconds, is studied. It is shown that the slow component is determined by the transport of nonequilibrium charge carriers between the quantum dots. At low temperatures, the time of the slow component is determined by tunneling, and at high temperatures by thermal escape of nonequilibrium charge carriers. The ratio of the contributions of tunneling and thermal escape is determined by the degree of isolation of quantum dots. A theoretical model is constructed that describes the effect of the dynamics of carrier transport on the emergence and decay of the slow component of photoluminescence.

  20. Redox probing study of the potential dependence of charge transport through Li2O2

    SciTech Connect (OSTI)

    Knudsen, Kristian B.; Luntz, Alan C.; Jensen, Søren H.; Vegge, Tejs; Hjelm, Johan

    2015-11-20

    In the field of energy storage devices the pursuit for cheap, high energy density, reliable secondary batteries is at the top of the agenda. The Li–O2 battery is one of the possible technologies that, in theory, should be able to close the gap, which exists between the present state-of-the-art Li-ion technologies and the demand placed on batteries by technologies such as electrical vehicles. Here we present a redox probing study of the charge transfer across the main deposition product lithium peroxide, Li2O2, in the Li–O2 battery using outer-sphere redox shuttles. The change in heterogeneous electron transfer exchange rate as a function of the potential and the Li2O2 layer thickness (~depth-of-discharge) was determined using electrochemical impedance spectroscopy. In addition, the attenuation of the electron transfer exchange rate with film thickness is dependent on the probing potential, providing evidence that hole transport is the dominant process for charge transfer through Li2O2 and showing that the origin of the sudden death observed upon discharge is due to charge transport limitations.

  1. A high-fidelity multiphysics model for the new solid oxide iron-air redox battery part I: Bridging mass transport and charge transfer with redox cycle kinetics

    SciTech Connect (OSTI)

    Jin, XF; Zhao, X; Huang, K

    2015-04-15

    A high-fidelity two-dimensional axial symmetrical multi-physics model is described in this paper as an effort to simulate the cycle performance of a recently discovered solid oxide metal-air redox battery (SOMARB). The model collectively considers mass transport, charge transfer and chemical redox cycle kinetics occurring across the components of the battery, and is validated by experimental data obtained from independent research. In particular, the redox kinetics at the energy storage unit is well represented by Johnson-Mehl-Avrami-Kolmogorov (JIVIAK) and Shrinking Core models. The results explicitly show that the reduction of Fe3O4 during the charging cycle limits the overall performance. Distributions of electrode potential, overpotential, Nernst potential, and H-2/H2O-concentration across various components of the battery are also systematically investigated. (C) 2015 Elsevier B.V. All rights reserved.

  2. Charge transport in zirconium doped anatase nanowires dye-sensitized solar cells: Trade-off between lattice strain and photovoltaic parameters

    SciTech Connect (OSTI)

    Archana, P. S.; Gupta, Arunava; Yusoff, Mashitah M.; Jose, Rajan

    2014-10-13

    Zirconium (Zr) is doped up to 5 at.?% in anatase TiO{sub 2} nanowires by electrospinning and used as working electrode in dye-sensitized solar cells. Variations observed in the photovoltaic parameters were correlated by electrochemical impedance spectroscopy, open circuit voltage decay, and X-ray diffraction measurements. Results show that homovalent substitution of Zr in TiO{sub 2} increased the chemical capacitance and electron diffusion coefficient which in turn decreased charge transport resistance and charge transit time. However, lattice strain due to size mismatch between the Zr{sup 4+} and Ti{sup 4+} ions decreased open circuit voltage and fill factor thereby setting a trade-off between doping concentration and photovoltaic properties.

  3. Effects of graphene defect on electronic structures of its interface with organic semiconductor

    SciTech Connect (OSTI)

    Yang, Qing-Dan; Wang, Chundong; Mo, Hin-Wai; Lo, Ming-Fai; Yuen, Muk Fung; Ng, Tsz-Wai E-mail: apcslee@cityu.edu.hk; Zhang, Wen-Jun; Lee, Chun-Sing E-mail: apcslee@cityu.edu.hk; Dou, Wei-Dong; Tsang, Sai-Wing

    2015-03-30

    Electronic structures of copper hexadecafluorophthalocyanine (F{sub 16}CuPc)/graphene with different defect density were studied with ultra-violet photoelectron spectroscopy. We showed that the charge transfer interaction and charge flow direction can be interestingly tuned by controlling the defect density of graphene through time-controlled H{sub 2} plasma treatment. By increasing the treatment time of H{sub 2} plasma from 30 s to 5 min, both the interface surface dipole and the electron transporting barrier at F{sub 16}CuPc/graphene interface are significantly reduced from 0.86 to 0.56?eV and 0.71 to 0.29?eV, respectively. These results suggested that graphene's defect control is a simple approach for tuning electronic properties of organic/graphene interfaces.

  4. transportation

    National Nuclear Security Administration (NNSA)

    security missions undertaken by the U.S. government.

    Pantex Plant's Calvin Nelson honored as Analyst of the Year for Transportation Security http:nnsa.energy.gov...

  5. Workplace Charging Challenge Partner: University of Wisconsin...

    Energy Savers [EERE]

    Responding to increased requests for plug-in electric charging stations from parking customers, UW-Madison Transportation Services installed dual level, charging stations in Lots ...

  6. TURTLE with MAD input (Trace Unlimited Rays Through Lumped Elements) -- A computer program for simulating charged particle beam transport systems and DECAY TURTLE including decay calculations

    SciTech Connect (OSTI)

    Carey, D.C.

    1999-12-09

    TURTLE is a computer program useful for determining many characteristics of a particle beam once an initial design has been achieved, Charged particle beams are usually designed by adjusting various beam line parameters to obtain desired values of certain elements of a transfer or beam matrix. Such beam line parameters may describe certain magnetic fields and their gradients, lengths and shapes of magnets, spacings between magnetic elements, or the initial beam accepted into the system. For such purposes one typically employs a matrix multiplication and fitting program such as TRANSPORT. TURTLE is designed to be used after TRANSPORT. For convenience of the user, the input formats of the two programs have been made compatible. The use of TURTLE should be restricted to beams with small phase space. The lumped element approximation, described below, precludes the inclusion of the effect of conventional local geometric aberrations (due to large phase space) or fourth and higher order. A reading of the discussion below will indicate clearly the exact uses and limitations of the approach taken in TURTLE.

  7. WIPP Documents - Transportation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transportation

  8. Mechanism of Proton Transport in Proton Exchange Membranes: Insights from Computer Simulation

    SciTech Connect (OSTI)

    Gregory A. Voth

    2010-11-30

    The solvation and transport of hydrated protons in proton exchange membranes (PEMs) such as NafionTM will be described using a novel multi-state reactive molecular dynamics (MD) approach, combined with large scale MD simulation to help probe various PEM morphological models. The multi-state MD methodology allows for the treatment of explicit (Grotthuss) proton shuttling and charge defect delocalization which, in turn, can strongly influence the properties of the hydrated protons in various aqueous and complex environments. A significant extension of the methodology to treat highly acidic (low pH) environments such as the hydrophilic domains of a PEM will be presented. Recent results for proton solvation and transport in NafionTM will be described which reveal the significant role of Grotthuss shuttling and charge defect delocalization on the excess proton solvation structures and transport properties. The role of PEM hydration level and morphology on these properties will also be described.

  9. Charge transfer and mobility enhancement at CdO/SnTe heterointerfaces

    SciTech Connect (OSTI)

    Nishitani, Junichi; Yu, Kin Man; Walukiewicz, Wladek

    2014-09-29

    We report a study of the effects of charge transfer on electrical properties of CdO/SnTe heterostructures. A series of structures with variable SnTe thicknesses were deposited by RF magnetron sputtering. Because of an extreme type III band offset with the valence band edge of SnTe located at 1.5?eV above the conduction band edge of CdO, a large charge transfer is expected at the interface of the CdO/SnTe heterostructure. The electrical properties of the heterostructures are analyzed using a multilayer charge transport model. The analysis indicates a large 4-fold enhancement of the CdO electron mobility at the interface with SnTe. The mobility enhancement is attributed to reduction of the charge center scattering through neutralization of the donor-like defects responsible for the Fermi level pinning at the CdO/SnTe interface.

  10. Electrical conductivity, Seebeck coefficient, and defect structure of Ca-doped YCrO sub 3

    SciTech Connect (OSTI)

    Carini, G.F. II.

    1990-01-01

    High temperature electrical conductivity, Seebeck coefficient, and thermogravimetric measurements were made as a function of oxygen activity to investigate the electrical transport behavior and defect structure of Ca-doped YCrO{sub 3}. Defect models were developed to correlate the electrical conductivity and thermogravimetric data by relating the concentration of charge carriers to the acceptor dopant and oxygen vacancy concentrations. These relations were found to adequately explain the experimental data. Thermodynamic properties were calculated which were consistent with the model. Calculations of the carrier concentrations, the activation energies, and the mobilities were also performed. The analysis of the electrical conductivity, Seebeck and mobility data suggested that the conduction process in Ca-doped YCrO{sub 3} occurs via the small polaron hopping mechanism. Kroger-Vink diagrams showing the regions of stability with respect to oxygen activity and temperature were constructed.

  11. Charged Amino Acids (R83, E567, D617, E625, R669, and K678) of CusA Are Required for Metal Ion Transport in the Cus Efflux System

    SciTech Connect (OSTI)

    Su, Chih-Chia; Long, Feng; Lei, Hsiang-Ting; Reddy Bolla, Jani; Do, Sylvia V.; Rajashankar, Kanagalaghatta R.; Yu, Edward W. (Cornell); (Iowa State)

    2012-10-23

    Gram-negative bacteria expel various toxic chemicals via tripartite efflux pumps belonging to the resistance-nodulation-cell division superfamily. These pumps span both the inner and outer membranes of the cell. The three components of these tripartite systems are an inner-membrane, substrate-binding transporter (or pump); a periplasmic membrane fusion protein (or adaptor); and an outer-membrane-anchored channel. These three efflux proteins interact in the periplasmic space to form the three-part complexes. We previously presented the crystal structures of both the inner-membrane transporter CusA and membrane fusion protein CusB of the CusCBA tripartite efflux system from Escherichia coli. We also described the co-crystal structure of the CusBA adaptor-transporter, revealing that the trimeric CusA efflux pump assembles with six CusB protein molecules to form the complex CusB{sub 6}-CusA{sub 3}. We here report three different conformers of the crystal structures of CusBA-Cu(I), suggesting a mechanism on how Cu(I) binding initiates a sequence of conformational transitions in the transport cycle. Genetic analysis and transport assays indicate that charged residues, in addition to the methionine pairs and clusters, are essential for extruding metal ions out of the cell.

  12. Workplace Charging Challenge Partner: Harvard University | Department...

    Energy Savers [EERE]

    Harvard University's Transportation Services Department has installed 26 EVSE charging stations in eleven locations across the campus. By actively promoting PEVs among faculty, ...

  13. Workplace Charging Challenge Partner: Michigan State University...

    Energy Savers [EERE]

    Michigan State University is committed to reducing its carbon footprint by using and promoting clean transportation. As the employee demand for charging stations became more ...

  14. Workplace Charging Challenge Partner: Stanford University | Department...

    Broader source: Energy.gov (indexed) [DOE]

    As part of its emission-reduction efforts, Stanford University Parking & Transportation Services (P&TS) has increased the number of Level 2 electric vehicle charging stations on ...

  15. Workplace Charging Challenge Partner: Appalachian State University...

    Broader source: Energy.gov (indexed) [DOE]

    The University's transportation department has installed two charging stations on campus and a plug-in electric vehicle (PEV) is available to all campus members. The university has ...

  16. Workplace Charging Challenge: Sample Workplace Charging Policy...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Workplace Charging Policy Workplace Charging Challenge: Sample Workplace Charging Policy Review the policy guidelines used by one Workplace Charging Challenge partner to keep their ...

  17. Defect-induced discriminative modulation of the highest occupied molecular orbital energies of graphene

    SciTech Connect (OSTI)

    Yuan, Wenjuan E-mail: luojunkink@126.com; Yang, Hongping; Zhu, Jing; Luo, Jun E-mail: luojunkink@126.com

    2015-11-15

    Defects are capable of modulating various properties of graphene, and thus controlling defects is useful in the development of graphene-based devices. Here we present first-principles calculations, which reveal a new avenue for defect engineering of graphene: the modulation by defects on the highest occupied molecular orbital (HOMO) energy of a charged monolayer graphene quantum dot (GQD) is discriminative. When the charge of a GQD increases its HOMO energy also increases. Importantly, when the GQD contains one particular class of defects its HOMO energy is sometimes higher and sometimes lower than that of the corresponding GQD without any defects, but when the GQD contains another class of defects its HOMO energy is always higher or lower than that of the corresponding intact GQD as its excess charge reaches a critical value. This discriminative modulation could allow defect engineering to control secondary electron ejection in graphene, leading to a new way to develop graphene-based devices.

  18. CHARGE IMBALANCE

    SciTech Connect (OSTI)

    Clarke, John

    1980-09-01

    The purpose of this article is to review the theory of charge imbalance, and to discuss its relevance to a number of experimental situations. We introduce the concepts of quasiparticle charge and charge imbalance, and discuss the generation and detection of charge imbalance by tunneling. We describe the relaxation of the injected charge imbalance by inelastic scattering processes, and show how the Boltzmann equation can be solved to obtain the steady state quasiparticle distribution and the charge relaxation rate. Details are given of experiments to measure charge imbalance and the charge relaxation rate when inelastic scattering is the predominant relaxation mechanism. Experiments on and theories of other charge relaxation mechanisms are discussed, namely relaxation via elastic scattering in the presence of energy gap anisotropy, or in the presence of a pair breaking mechanism such as magnetic impurities or an applied supercurrent or magnetic field. We describe three other situations in which charge imbalance occurs, namely the resistance of the NS interface, phase slip centers, and the flow of a supercurrent in the presence of a temperature gradient.

  19. Managing Increased Charging Demand

    Broader source: Energy.gov (indexed) [DOE]

    Would you be willing to pay a fee for charging? Workplace Charging Challenge How many charging stations does my worksite need? 3 Workplace Charging Challenge Workplace Charging ...

  20. Imaging space charge regions in Sm-doped ceria using electrochemical strain microscopy

    SciTech Connect (OSTI)

    Chen, Qian Nataly; Li, Jiangyu; Adler, Stuart B.

    2014-11-17

    Nanocrystalline ceria exhibits a total conductivity several orders of magnitude higher than microcrystalline ceria in air at high temperature. The most widely accepted theory for this enhancement (based on fitting of conductivity data to various transport and kinetic models) is that relatively immobile positively charged defects and/or impurities accumulate at the grain boundary core, leading to a counterbalancing increase in the number of mobile electrons (small polarons) within a diffuse space charge region adjacent to each grain boundary. In an effort to validate this model, we have applied electrochemical strain microscopy to image the location and relative population of mobile electrons near grain boundaries in polycrystalline Sm-doped ceria in air at 20200?C. Our results show the first direct (spatially resolved) evidence that such a diffuse space charge region does exist in ceria, and is localized to both grain boundaries and the gas-exposed surface.

  1. Highly Charged Ion (HCI) Modified Tunnel Junctions

    SciTech Connect (OSTI)

    Pomeroy, J. M.; Grube, H. [Atomic Physics Division, National Institute of Standards and Technology (NIST) 100 Bureau Dr., MS 8423, Gaithersburg, MD 20899-8423 (United States)

    2009-03-10

    The neutralization energy carried by highly charged ions (HCIs) provides an alternative method for localizing energy on a target's surface, producing features and modifying surfaces with fluences and kinetic energy damage that are negligible compared to singly ionized atoms. Since each HCI can deposit an enormous amount of energy into a small volume of the surface (e.g., Xe{sup 44+} delivers 51 keV of neutralization energy per HCI), each individual HCI's interaction with the target can produce a nanoscale feature. Many studies of HCI-surface features have characterized some basic principles of this unique ion-surface interaction, but the activity reported here has been focused on studying ensembles of HCI features in ultra-thin insulating films by fabricating multi-layer tunnel junction devices. The ultra-thin insulating barriers allow current to flow by tunneling, providing a very sensitive means of detecting changes in the barrier due to highly charged ion irradiation and, conversely, HCI modification provides a method of finely tuning the transparency of the tunnel junctions that spans several orders of magnitude for devices produced from a single process recipe. Systematic variation of junction bias, temperature, magnetic field and other parameters provides determination of the transport mechanism, defect densities, and magnetic properties of these nano-features and this novel approach to device fabrication.

  2. Snapshots of Proton Accommodation at a Microscopic Water Surface: Understanding the Vibrational Spectral Signatures of the Charge Defect in Cryogenically Cooled H+(H2O)n=2 – 28 Clusters

    SciTech Connect (OSTI)

    Fournier, Joseph A.; Wolke, Conrad T.; Johnson, Mark A.; Odbadrakh, Tuguldur T.; Jordan, Kenneth D.; Kathmann, Shawn M.; Xantheas, Sotiris S.

    2015-07-09

    In this Article, we review the role of gas-phase, size-selected protonated water clusters, H+(H2O)n, in the analysis of the microscopic mechanics responsible for the behavior of the excess proton in bulk water. We extend upon previous studies of the smaller, two-dimensional sheet-like structures to larger (n≥10) assemblies with three-dimensional cage morphologies which better mimic the bulk environment. Indeed, clusters in which a complete second solvation shell forms around a surface-embedded hydronium ion yield vibrational spectra where the signatures of the proton defect display strikingly similar positions and breadth to those observed in dilute acids. We investigate effects of the local structure and intermolecular interactions on the large red shifts observed in the proton vibrational signature upon cluster growth using various theoretical methods. We show that, in addition to sizeable anharmonic couplings, the position of the excess proton vibration can be traced to large increases in the electric field exerted on the embedded hydronium ion upon formation of the first and second solvation shells. MAJ acknowledges support from the U.S. Department of Energy under Grant No. DE-FG02- 06ER15800 as well as the facilities and staff of the Yale University Faculty of Arts and Sciences High Performance Computing Center, and by the National Science Foundation under Grant No. CNS 08-21132 that partially funded acquisition of the facilities. SMK and SSX acknowledge support from the US Department of Energy, Office of Science, Office of Basic Energy Sciences, Division of Chemical Sciences, Geosciences and Biosciences. Pacific Northwest National Laboratory (PNNL) is a multiprogram national laboratory operated for DOE by Battelle. This research used resources of the National Energy Research Scientific Computing Center, which is supported by the Office of Science of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

  3. Workplace Charging Challenge: Sample Municipal Workplace Charging...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Municipal Workplace Charging Agreement Workplace Charging Challenge: Sample Municipal Workplace Charging Agreement Review the agreement proposed by one municipality to register PEV ...

  4. Point defects and ion migration in PbFCl

    SciTech Connect (OSTI)

    Islam, M.S. )

    1990-04-01

    Atomistic simulation techniques have been applied to PbFCl in order to calculate the energetics of defect formation and ion transport mechanisms in the undoped material. Schottky-like disorder is computed to be the dominant ionic defect. The activation energies for a variety of anion vacancy migration mechanisms are calculated and found to be in good agreement with experiment.

  5. Analysis of carrier transport and carrier trapping in organic diodes with polyimide-6,13-Bis(triisopropylsilylethynyl)pentacene double-layer by charge modulation spectroscopy and optical second harmonic generation measurement

    SciTech Connect (OSTI)

    Lim, Eunju E-mail: taguchi.d.aa@m.titech.ac.jp; Taguchi, Dai E-mail: taguchi.d.aa@m.titech.ac.jp Iwamoto, Mitsumasa E-mail: taguchi.d.aa@m.titech.ac.jp

    2014-08-18

    We studied the carrier transport and carrier trapping in indium tin oxide/polyimide (PI)/6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)/Au diodes by using charge modulation spectroscopy (CMS) and time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements. TR-EFISHG directly probes the spatial carrier behaviors in the diodes, and CMS is useful in explaining the carrier motion with respect to energy. The results clearly indicate that the injected carriers move across TIPS-pentacene thorough the molecular energy states of TIPS-pentacene and accumulate at the PI/TIPS-pentacene interface. However, some carriers are trapped in the PI layers. These findings take into account the capacitance-voltage and current-voltage characteristics of the diodes.

  6. A charged particle transport analysis of the dose to a silicon-germanium thermoelectric element due to a solar flare event

    SciTech Connect (OSTI)

    Dandini, V.J.

    1991-01-01

    A version of the BRYNTRN baryon transport code written at the NASA Langley Research Center has been used to analyze the dose to a typical space reactor thermoelectric (TE) element due to a solar flare event. The code has been used in the past to calculate the dose/dose equivalent distributions to astronauts due to solar flares. It has been modified to accommodate multiple layers of spacecraft and component material. Differential and integrated doses to the TE element are presented and discussed. 5 refs.

  7. Micrograph Defect Indentifier

    Energy Science and Technology Software Center (OSTI)

    2012-10-11

    Micrograph image defect identifier is a computer code written in MATLAB to automatically detect defects on scanned image of thin film membrane samples employing three methods: global threshold, line detection and k-means segmentation. The results are segmented binary images of thin film with defects identified. Defect area fractions are also calculated. The users may use default functional variables calculated by program, or input preferred value from user’s experience. This will empower the user to processingmore » the image with more flexibility. MDI was designed to identify defects of thin films fabricated. It is also used in phase identification, porosity study on SEM, OM, TEM images. Different methods were applied in this software package: global threshold, line detection and k-means segmentation.« less

  8. "Multiscale Capabilities for Exploring Transport Phenomena in...

    Office of Scientific and Technical Information (OSTI)

    in Batteries": Ab Initio Calculations on Defective LiFePO4 Citation Details In-Document Search Title: "Multiscale Capabilities for Exploring Transport Phenomena in Batteries": Ab ...

  9. Interlayer coupling enhancement in graphene/hexagonal boron nitride heterostructures by intercalated defects or vacancies

    SciTech Connect (OSTI)

    Park, Sohee [Department of Materials Science and Engineering, Seoul National University, Seoul 151-747 (Korea, Republic of)] [Department of Materials Science and Engineering, Seoul National University, Seoul 151-747 (Korea, Republic of); Park, Changwon [Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)] [Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Kim, Gunn, E-mail: gunnkim@sejong.ac.kr [Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of)] [Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of)

    2014-04-07

    Hexagonal boron nitride (hBN), a remarkable material with a two-dimensional atomic crystal structure, has the potential to fabricate heterostructures with unusual properties. We perform first-principles calculations to determine whether intercalated metal atoms and vacancies can mediate interfacial coupling and influence the structural and electronic properties of the graphene/hBN heterostructure. Metal impurity atoms (Li, K, Cr, Mn, Co, and Cu), acting as extrinsic defects between the graphene and hBN sheets, produce n-doped graphene. We also consider intrinsic vacancy defects and find that a boron monovacancy in hBN acts as a magnetic dopant for graphene, whereas a nitrogen monovacancy in hBN serves as a nonmagnetic dopant for graphene. In contrast, the smallest triangular vacancy defects in hBN are unlikely to result in significant changes in the electronic transport of graphene. Our findings reveal that a hBN layer with some vacancies or metal impurities enhances the interlayer coupling in the graphene/hBN heterostructure with respect to charge doping and electron scattering.

  10. Shedding Light on Nanocrystal Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shedding Light on Nanocrystal Defects Shedding Light on Nanocrystal Defects Print Thursday, 20 June 2013 10:41 Nanocrystals have been the focus of much scientific interest lately,...

  11. Automated Defect Classification (ADC)

    Energy Science and Technology Software Center (OSTI)

    1998-01-01

    The ADC Software System is designed to provide semiconductor defect feature analysis and defect classification capabilities. Defect classification is an important software method used by semiconductor wafer manufacturers to automate the analysis of defect data collected by a wide range of microscopy techniques in semiconductor wafer manufacturing today. These microscopies (e.g., optical bright and dark field, scanning electron microscopy, atomic force microscopy, etc.) generate images of anomalies that are induced or otherwise appear on wafermore » surfaces as a result of errant manufacturing processes or simple atmospheric contamination (e.g., airborne particles). This software provides methods for analyzing these images, extracting statistical features from the anomalous regions, and applying supervised classifiers to label the anomalies into user-defined categories.« less

  12. NREL: Transportation Research - Transportation Deployment Support

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transportation Deployment Support Photo of a car parked in front of a monument. A plug-in electric vehicle charges near the Thomas Jefferson Memorial in Washington, D.C. Photo from Julie Sutor, NREL NREL's transportation deployment team works with vehicle fleets, fuel providers, and other transportation stakeholders to help deploy alternative and renewable fuels, advanced vehicles, fuel economy improvements, and fleet-level efficiencies that reduce emissions and petroleum dependence. In

  13. Temperature dependence of carrier capture by defects in gallium arsenide

    SciTech Connect (OSTI)

    Wampler, William R.; Modine, Normand A.

    2015-08-01

    This report examines the temperature dependence of the capture rate of carriers by defects in gallium arsenide and compares two previously published theoretical treatments of this based on multi phonon emission (MPE). The objective is to reduce uncertainty in atomistic simulations of gain degradation in III-V HBTs from neutron irradiation. A major source of uncertainty in those simulations is poor knowledge of carrier capture rates, whose values can differ by several orders of magnitude between various defect types. Most of this variation is due to different dependence on temperature, which is closely related to the relaxation of the defect structure that occurs as a result of the change in charge state of the defect. The uncertainty in capture rate can therefore be greatly reduced by better knowledge of the defect relaxation.

  14. Strong focus space charge

    DOE Patents [OSTI]

    Booth, Rex

    1981-01-01

    Strong focus space charge lens wherein a combination of current-carrying coils and charged electrodes form crossed magnetic and electric fields to focus charged particle beams.

  15. Managing Increased Charging Demand

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Managing Increased Charging Demand Carrie Giles ICF International, Supporting the Workplace Charging Challenge Workplace Charging Challenge Do you already own an EV? Are you...

  16. Workplace Charging Challenge Partner: Northwest Evaluation Association...

    Energy Savers [EERE]

    As of 2015, NWEA has installed three plug-in electric vehicle (PEV) charging stations for staff to use at no cost. NWEA is committed to all forms of alternative transportation, ...

  17. Measurement of Single Electronic Charging of Semiconductor Nano-Crystals

    SciTech Connect (OSTI)

    Kastner, Marc A.

    2014-10-09

    We have studied charge transport in nanopatterned arrays of PbS colloidal quantum dots using conventional two-probe measurements as well as with an integrated chargesensor.

  18. ETA-HTP08 Rechargeable Energy Storage System (RESS) Charging...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ETA-HTP08 Revision 1 Effective October 1, 2004 Rechargeable Energy Storage System (RESS) Charging Prepared by Electric Transportation Applications Prepared by: ...

  19. Graphene materials having randomly distributed two-dimensional structural defects

    DOE Patents [OSTI]

    2013-10-08

    Graphene-based storage materials for high-power battery applications are provided. The storage materials are composed of vertical stacks of graphene sheets and have reduced resistance for Li ion transport. This reduced resistance is achieved by incorporating a random distribution of structural defects into the stacked graphene sheets, whereby the structural defects facilitate the diffusion of Li ions into the interior of the storage materials.

  20. Graphene materials having randomly distributed two-dimensional structural defects

    DOE Patents [OSTI]

    Kung, Harold H.; Zhao, Xin; Hayner, Cary M.; Kung, Mayfair C.

    2016-05-31

    Graphene-based storage materials for high-power battery applications are provided. The storage materials are composed of vertical stacks of graphene sheets and have reduced resistance for Li ion transport. This reduced resistance is achieved by incorporating a random distribution of structural defects into the stacked graphene sheets, whereby the structural defects facilitate the diffusion of Li ions into the interior of the storage materials.

  1. Intrinsic space charge layers and field enhancement in ferroelectric nanojunctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Cao, Ye; Ievlev, Anton V.; Morozovska, Anna N.; Chen, Long-Qing; Kalinin, Sergei V.; Maksymovych, Petro

    2015-07-13

    The conducting characteristics of topological defects in the ferroelectric materials, such as charged domain walls in ferroelectric materials, engendered broad interest and extensive study on their scientific merit and the possibility of novel applications utilizing domain engineering. At the same time, the problem of electron transport in ferroelectrics themselves still remains full of unanswered questions, and becomes still more relevant over the impending revival of interest in ferroelectric semiconductors and new improper ferroelectric materials. We have employed self-consistent phase-field modeling to investigate the physical properties of a local metal-ferroelectric (Pb(Zr0.2Ti0.8)O3) junction in applied electric field. We revealed an up tomore » 10-fold local field enhancement realized by large polarization gradient and over-polarization effects once the inherent non-linear dielectric properties of PZT are considered. The effect is independent of bias polarity and maintains its strength prior, during and after ferroelectric switching. The local field enhancement can be considered equivalent to increase of doping level, which will give rise to reduction of the switching bias and significantly smaller voltages to charge injection and electronic injection, electrochemical and photoelectrochemical processes.« less

  2. Defect mapping system

    DOE Patents [OSTI]

    Sopori, Bhushan L.

    1995-01-01

    Apparatus for detecting and mapping defects in the surfaces of polycrystalline materials in a manner that distinguishes dislocation pits from grain boundaries includes a laser for illuminating a wide spot on the surface of the material, a light integrating sphere with apertures for capturing light scattered by etched dislocation pits in an intermediate range away from specular reflection while allowing light scattered by etched grain boundaries in a near range from specular reflection to pass through, and optical detection devices for detecting and measuring intensities of the respective intermediate scattered light and near specular scattered light. A center blocking aperture or filter can be used to screen out specular reflected light, which would be reflected by nondefect portions of the polycrystalline material surface. An X-Y translation stage for mounting the polycrystalline material and signal processing and computer equipment accommodate rastor mapping, recording, and displaying of respective dislocation and grain boundary defect densities. A special etch procedure is included, which prepares the polycrystalline material surface to produce distinguishable intermediate and near specular light scattering in patterns that have statistical relevance to the dislocation and grain boundary defect densities.

  3. Defect mapping system

    DOE Patents [OSTI]

    Sopori, B.L.

    1995-04-11

    Apparatus for detecting and mapping defects in the surfaces of polycrystalline materials in a manner that distinguishes dislocation pits from grain boundaries includes a laser for illuminating a wide spot on the surface of the material, a light integrating sphere with apertures for capturing light scattered by etched dislocation pits in an intermediate range away from specular reflection while allowing light scattered by etched grain boundaries in a near range from specular reflection to pass through, and optical detection devices for detecting and measuring intensities of the respective intermediate scattered light and near specular scattered light. A center blocking aperture or filter can be used to screen out specular reflected light, which would be reflected by nondefect portions of the polycrystalline material surface. An X-Y translation stage for mounting the polycrystalline material and signal processing and computer equipment accommodate rastor mapping, recording, and displaying of respective dislocation and grain boundary defect densities. A special etch procedure is included, which prepares the polycrystalline material surface to produce distinguishable intermediate and near specular light scattering in patterns that have statistical relevance to the dislocation and grain boundary defect densities. 20 figures.

  4. Workplace Charging Challenge: Promote Charging at Work

    Broader source: Energy.gov [DOE]

    Employees with access to workplace charging are six times more likely to drive a plug-in electric vehicle (PEV) than the average worker. Promoting PEV charging at workplaces is one great way that...

  5. Battery charging stations

    SciTech Connect (OSTI)

    Bergey, M.

    1997-12-01

    This paper discusses the concept of battery charging stations (BCSs), designed to service rural owners of battery power sources. Many such power sources now are transported to urban areas for recharging. A BCS provides the opportunity to locate these facilities closer to the user, is often powered by renewable sources, or hybrid systems, takes advantage of economies of scale, and has the potential to provide lower cost of service, better service, and better cost recovery than other rural electrification programs. Typical systems discussed can service 200 to 1200 people, and consist of stations powered by photovoltaics, wind/PV, wind/diesel, or diesel only. Examples of installed systems are presented, followed by cost figures, economic analysis, and typical system design and performance numbers.

  6. Workplace Charging Challenge: Sample Workplace Charging Policy

    Office of Energy Efficiency and Renewable Energy (EERE)

    Review the policy guidelines used by one Workplace Charging Challenge partner to keep their program running safe and successfully.

  7. Plug-In Electric Vehicle Handbook for Workplace Charging Hosts

    SciTech Connect (OSTI)

    2013-08-01

    Plug-in electric vehicles (PEVs) have immense potential for increasing the country's energy, economic, and environmental security, and they will play a key role in the future of U.S. transportation. By providing PEV charging at the workplace, employers are perfectly positioned to contribute to and benefit from the electrification of transportation. This handbook answers basic questions about PEVs and charging equipment, helps employers assess whether to offer workplace charging for employees, and outlines important steps for implementation.

  8. Electric Transportation Applications All Rights Reserved ETA...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    8 Revision 2 Effective March 1, 1997 Battery Charging Prepared by Electric Transportation ... with the requirements of the vehiclebattery supplier as stated in the OwnerOperators ...

  9. Workplace Charging Equipment Costs

    Broader source: Energy.gov [DOE]

    Charging stations are available from a variety of manufacturers in a range of models for all charging applications. For a single port charging station, Level 1 hardware costs range from $300-$1,500...

  10. Quick spacecraft charging primer

    SciTech Connect (OSTI)

    Larsen, Brian Arthur

    2014-03-12

    This is a presentation in PDF format which is a quick spacecraft charging primer, meant to be used for program training. It goes into detail about charging physics, RBSP examples, and how to identify charging.

  11. PROJECT PROFILE: High-resolution Investigations of Transport...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    in Thin-Film Photovoltaic Devices PROJECT PROFILE: High-resolution Investigations of Transport Limiting Defects and Interfaces in Thin-Film Photovoltaic Devices Funding ...

  12. Voltage shifts and defect-dipoles in ferroelectric capacitors

    SciTech Connect (OSTI)

    Warren, W.L.; Pike, G.E.; Dimos, D.

    1996-12-01

    We review the processes and mechanisms by which voltage offsets occur in the hysteresis loop of ferroelectric materials. Simply stated, voltage shifts arise from near-interfacial charge trapping in the ferroelectric. We show that the impetus behind voltage shifts in ferroelectric capacitors is the net polarization, with the net polarization being determined by the perovskite and the aligned defect-dipole components. Some common defect-dipoles in the PZT system are lead vacancy-oxygen vacancy complexes. One way to change the net polarization in the ferroelectric is to subject the PZT capacitor to a dc bias at elevated temperature; this process is spectroscopically shown to align defect-dipoles along the direction of the applied electric field. The alignment of defect-dipoles can strongly impact several material properties. One such impact is that it can lead to enhanced voltage shifts (imprint). It is proposed that the net polarization determines the spatial location of the asymmetrically trapped charge that are the cause for the voltage shifts. An enhanced polarization at one electrode interface can lead to larger voltage shifts since it lowers the electrostatic potential well for electron trapping, i.e., more electron trapping can occur. Defect-dipole alignment is also shown to increase the UV sensitivity of the ferroelectric.

  13. Structure, defects, and strain in silicon-silicon oxide interfaces

    SciTech Connect (OSTI)

    Kova?evi?, Goran Pivac, Branko

    2014-01-28

    The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

  14. Role of associated defects in oxygen ion conduction and surface exchange reaction for epitaxial samaria-doped ceria thin films as catalytic coatings

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yang, Nan; Shi, Yanuo; Schweiger, Sebastian; Strelcov, Evgheni; Foglietti, Vittorio; Orgiani, Pasquale; Balestrino, Giuseppe; Kalinin, Sergei V.; Jennifer L. M. Rupp; Aruta, Carmela; et al

    2016-05-18

    Samaria-doped ceria (SDC) thin films are particularly important for energy and electronic applications such as micro-solid oxide fuel cells, electrolysers, sensors and memristors. In this paper we report a comparative study investigating ionic conductivity and surface reactions for well-grown epitaxial SDC films varying the samaria doping concentration. With increasing doping above 20 mol% of samaria, an enhancement in the defect association was observed by Raman spectroscopy. The role of such defect associates on the films` oxygen ion transport and exchange was investigated by electrochemical impedance spectroscopy and electrochemical strain microscopy (ESM). The measurements reveal that the ionic transport has amore » sharp maximum in ionic conductivity and drop in its activation energy down to 0.6 eV for 20 mol% doping. Increasing the doping concentration further up to 40 mol%, raises the activation energy substantially by a factor of two. We ascribe the sluggish transport kinetics to the "bulk" ionic-near ordering in case of the heavily doped epitaxial films. Analysis of the ESM first order reversal curve measurements indicate that these associated defects may have a beneficial role by lowering the activation of the oxygen exchange "surface" reaction for heavily doped 40 mol% of samaria. We reveal in a model experiment through a solid solution series of samaria doped ceria epitaxial films that the occurrence of associate defects in the bulk affects the surface charging state of the films to increase the exchange rates. Lastly, the implication of these findings are the design of coatings with tuned oxygen surface exchange by control of bulk associate clusters for future electro-catalytic applications.« less

  15. Electric Vehicle Workplace Charging

    Broader source: Energy.gov (indexed) [DOE]

    for annual capital fleet purchases 10 of 17 locations currently have charging stations Agreement with employees to provide workplace charging Ultimate goal is ...

  16. Workplace Charging Challenge

    SciTech Connect (OSTI)

    2013-09-01

    Fact sheet about the EV Everywhere Workplace Charging Challenge which is to increase the number of American employers offering workplace charging by tenfold in the next five years.

  17. Utilities and Workplace Charging

    Broader source: Energy.gov (indexed) [DOE]

    for workplace charging Aid in forecasting similar workplace charging needs with ... of plug-in vehicle technology, costs, and benefits? 50% 40% 30% 20% 10% 0% 1 2 ...

  18. Dynamic Wireless Charging

    SciTech Connect (OSTI)

    2015-03-13

    ORNL successfully demonstrated in-motion wireless charging in the laboratory using a small GEM vehicle and a series of six charging coils.

  19. Electric Vehicle Workplace Charging

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    or Twitter Attend local EV events Share your story Currently have 13 ChargePoint charging stations scattered throughout Vermont 2015 - 12 Freedom Stations & 10...

  20. Workplace Charging Challenge

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    EV Everywhere Workplace Charging Challenge, committing to install charging for plug-in electric vehicles (PEVs) at their worksites. By taking on this Challenge, they are helping...

  1. Technology available for license: Charging of liquid energy storage media

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    through radiolysis (ANL-IN-14-036) | Argonne National Laboratory Technology available for license: Charging of liquid energy storage media through radiolysis (ANL-IN-14-036) January 23, 2015 Tweet EmailPrint This technology utilizes radiolysis to charge liquid energy storage media including nanoelectrofuels. Charged liquid can be used in flow batteries for transportation and stationary energy-storage applications. Radiolysis charging can be conducted on aqueous and non-aqueous battery

  2. How usage is charged

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    usage is charged How usage is charged MPP Charging (Computational Systems) When a job runs on a NERSC MPP system, such as Hopper, charges accrue against one of the user's repository allocations. The unit of accounting for these charges is the "MPP Hour". A parallel job is charged for exclusive use of each multi-core node allocated to the job. The MPP charge for such a job is calculated as the product of: the job's elapsed wall-clock time in hours the number of nodes allocated to the

  3. Surface charge accumulation of particles containing radionuclides in open air

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kim, Yong-ha; Yiacoumi, Sotira; Tsouris, Costas

    2015-05-01

    Radioactivity can induce charge accumulation on radioactive particles. But, electrostatic interactions caused by radioactivity are typically neglected in transport modeling of radioactive plumes because it is assumed that ionizing radiation leads to charge neutralization. The assumption that electrostatic interactions caused by radioactivity are negligible is evaluated here by examining charge accumulation and neutralization on particles containing radionuclides in open air. Moreover, a charge-balance model is employed to predict charge accumulation on radioactive particles. It is shown that particles containing short-lived radionuclides can be charged with multiple elementary charges through radioactive decay. The presence of radioactive particles can significantly modify themore » particle charge distribution in open air and yield an asymmetric bimodal charge distribution, suggesting that strong electrostatic particle interactions may occur during short- and long-range transport of radioactive particles. Possible effects of transported radioactive particles on electrical properties of the local atmosphere are reported. Our study offers insight into transport characteristics of airborne radionuclides. Results are useful in atmospheric transport modeling of radioactive plumes.« less

  4. Shedding Light on Nanocrystal Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shedding Light on Nanocrystal Defects Print Nanocrystals have been the focus of much scientific interest lately, given their various advantageous mechanical properties. Their...

  5. Effect of Z{sub 1/2}, EH{sub 5}, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

    SciTech Connect (OSTI)

    Mannan, Mohammad A.; Chaudhuri, Sandeep K.; Nguyen, Khai V.; Mandal, Krishna C.

    2014-06-14

    Spectroscopic performance of Schottky barrier alpha particle detectors fabricated on 50 μm thick n-type 4H-SiC epitaxial layers containing Z{sub 1/2}, EH{sub 5}, and Ci1 deep levels were investigated. The device performance was evaluated on the basis of junction current/capacitance characterization and alpha pulse-height spectroscopy. Capacitance mode deep level transient spectroscopy revealed the presence of the above-mentioned deep levels along with two shallow level defects related to titanium impurities (Ti(h) and Ti(c)) and an unidentified deep electron trap located at 2.4 eV below the conduction band minimum, which is being reported for the first time. The concentration of the lifetime killer Z{sub 1/2} defects was found to be 1.7 × 10{sup 13} cm{sup −3}. The charge transport and collection efficiency results obtained from the alpha particle pulse-height spectroscopy were interpreted using a drift-diffusion charge transport model. Based on these investigations, the physics behind the correlation of the detector properties viz., energy resolution and charge collection efficiency, the junction properties like uniformity in barrier-height, leakage current, and effective doping concentration, and the presence of defects has been discussed in details. The studies also revealed that the dominating contribution to the charge collection efficiency was due to the diffusion of charge carriers generated in the neutral region of the detector. The 10 mm{sup 2} large area detectors demonstrated an impressive energy resolution of 1.8% for 5486 keV alpha particles at an optimized operating reverse bias of 130 V.

  6. Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Vittone, Ettore; Pastuovic, Zeljko; Breese, Mark B. H.; Lopez, Javier Garicia; Jaksic, Milko; Raisanen, Jyrki; Siegele, Rainer; Simon, Aliz; Vizkelethy, Gyorgy

    2016-02-08

    This study investigates both theoretically and experimentally the charge collection efficiency (CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge (IBIC) measurements carried out on n- and p-type silicon diodes which were previously irradiated with MeV He ions show evidence that the CCE degradation does not only depend on the mass, energy and fluence of the damaging ion, but also depends on the ion probe species and on the polarization state of the device. A general one-dimensional model is derived, which accounts for the ion-induced defect distribution, the ionization profile of the probing ion and themore » charge induction mechanism. Using the ionizing and non-ionizing energy loss profiles resulting from simulations based on the binary collision approximation and on the electrostatic/transport parameters of the diode under study as input, the model is able to accurately reproduce the experimental CCE degradation curves without introducing any phenomenological additional term or formula. Although limited to low level of damage, the model is quite general, including the displacement damage approach as a special case and can be applied to any semiconductor device. It provides a method to measure the capture coefficients of the radiation induced recombination centres. They can be considered indexes, which can contribute to assessing the relative radiation hardness of semiconductor materials.« less

  7. Workplace Charging Challenge: Install and Manage PEV Charging | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Energy Install and Manage PEV Charging Workplace Charging Challenge: Install and Manage PEV Charging pev_workplace_charging_hosts_150x194.jpg To determine if workplace charging is right for your organization, use the employer resources to learn more about PEVs and charging stations. The PEV Handbook for Workplace Charging Hosts is particularly helpful for employers deciding if and how to install charging stations to ensure a successful workplace charging program. PEVs and Charging

  8. Charging Graphene for Energy Storage

    SciTech Connect (OSTI)

    Liu, Jun

    2014-10-06

    Since 2004, graphene, including single atomic layer graphite sheet, and chemically derived graphene sheets, has captured the imagination of researchers for energy storage because of the extremely high surface area (2630 m2/g) compared to traditional activated carbon (typically below 1500 m2/g), excellent electrical conductivity, high mechanical strength, and potential for low cost manufacturing. These properties are very desirable for achieving high activity, high capacity and energy density, and fast charge and discharge. Chemically derived graphene sheets are prepared by oxidation and reduction of graphite1 and are more suitable for energy storage because they can be made in large quantities. They still contain multiply stacked graphene sheets, structural defects such as vacancies, and oxygen containing functional groups. In the literature they are also called reduced graphene oxide, or functionalized graphene sheets, but in this article they are all referred to as graphene for easy of discussion. Two important applications, batteries and electrochemical capacitors, have been widely investigated. In a battery material, the redox reaction occurs at a constant potential (voltage) and the energy is stored in the bulk. Therefore, the energy density is high (more than 100 Wh/kg), but it is difficult to rapidly charge or discharge (low power, less than 1 kW/kg)2. In an electrochemical capacitor (also called supercapacitors or ultracapacitor in the literature), the energy is stored as absorbed ionic species at the interface between the high surface area carbon and the electrolyte, and the potential is a continuous function of the state-of-charge. The charge and discharge can happen rapidly (high power, up to 10 kW/kg) but the energy density is low, less than 10 Wh/kg2. A device that can have both high energy and high power would be ideal.

  9. PROJECT PROFILE: High-resolution Investigations of Transport Limiting

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Defects and Interfaces in Thin-Film Photovoltaic Devices | Department of Energy High-resolution Investigations of Transport Limiting Defects and Interfaces in Thin-Film Photovoltaic Devices PROJECT PROFILE: High-resolution Investigations of Transport Limiting Defects and Interfaces in Thin-Film Photovoltaic Devices Funding Opportunity: SuNLaMP SunShot Subprogram: Photovoltaics Location: National Renewable Energy Laboratory, Golden, CO Amount Awarded: $1,000,000 This project will develop the

  10. Charge regulation circuit

    DOE Patents [OSTI]

    Ball, Don G.

    1992-01-01

    A charge regulation circuit provides regulation of an unregulated voltage supply in the range of 0.01%. The charge regulation circuit is utilized in a preferred embodiment in providing regulated voltage for controlling the operation of a laser.

  11. Workplace Charging Presentation

    Broader source: Energy.gov [DOE]

    Educate employers about plug-in electric vehicles and workplace charging using this sample presentation. The presentation covers the basics of PEVs and workplace charging as well as the benefit of...

  12. Workplace Charging Challenge: Install and Manage PEV Charging...

    Office of Environmental Management (EM)

    Charging - Evaluate whether your workplace is right for solar assisted charging stations. ... Charging Equipment and Installation Costs - Review typical price ranges and factors ...

  13. Workplace Charging Challenge: Higher Education PEV Charging Webinar...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Challenge: Higher Education PEV Charging Webinar Workplace Charging Challenge: Higher Education PEV Charging Webinar Review the slides from our webinar which highlighted workplace ...

  14. 2010 Defects in Semiconductors GRC

    SciTech Connect (OSTI)

    Shengbai Zhang

    2011-01-06

    Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, as well as an emphasis on the development of novel defect detection methods and first-principles defect theories. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference will deal with point and extended defects in a broad range of electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, oxides, sp{sup 2} carbon based-materials, and photovoltaic/solar cell materials, and in understanding important defect phenomena such as doping bottleneck in nanostructures and the diffusion of defects and impurities. The program consists of about twenty invited talks and a number of contributed poster sessions. The emphasis should be on work which has yet to be published. The large amount of discussion time provides an ideal forum for dealing with topics that are new and/or controversial.

  15. Charge exchange system

    DOE Patents [OSTI]

    Anderson, Oscar A.

    1978-01-01

    An improved charge exchange system for substantially reducing pumping requirements of excess gas in a controlled thermonuclear reactor high energy neutral beam injector. The charge exchange system utilizes a jet-type blanket which acts simultaneously as the charge exchange medium and as a shield for reflecting excess gas.

  16. Workplace Charging Challenge: Signage Guidance

    Broader source: Energy.gov [DOE]

    Signage for plug-in electric vehicle (PEV) charging stations is an important consideration at workplaces that offer access to charging. Appropriate charging station signage can:

  17. Workplace Charging Program and Initiatives

    Broader source: Energy.gov (indexed) [DOE]

    NYPA's Workplace Charging Pilot Program Employee charging stations installed at the Authority's White Plains office NYPA joined the US DOE's Workplace Charging Challenge ...

  18. Workplace Charging Challenge 2014 Agenda

    Broader source: Energy.gov (indexed) [DOE]

    Track A (Plaza Ballroom I): Promoting your workplace charging program A robust workplace charging program doesn't conclude once the charging stations are in the ground. Many ...

  19. Thermite charge - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    & Trademark Office Marketing Summary: Linear Thermite Charge Abstract: The present invention provides for cutting operations using linear thermite charges; the charges cut one...

  20. Workplace Charging Challenge Partner: SUNY Empire State College...

    Broader source: Energy.gov (indexed) [DOE]

    The College installed 2 charging stations for use by employees and the community to support clean transportation and provide a service for the growing number of plug-in electric ...

  1. Space Charge Correction on Emittance Measurement of Low Energy...

    Office of Scientific and Technical Information (OSTI)

    in the calculation of beam emittance. We present below the preliminary results of a MATLAB code built to model the transport of a charged particle beam through an accelerator...

  2. Defect tolerant transmission lithography mask (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    Structural imperfections and defects in the coating have negligible effect on the aerial ... the phase defect problem, and is independent of the thermal load during exposure. ...

  3. Could Material Defects Actually Improve Solar Cells?

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Deep-level defects frequently hamper the efficiency of solar cells, but NREL theoretical research suggests that defects with properly engineered energy levels can improve carrier ...

  4. Sequential detection of web defects

    DOE Patents [OSTI]

    Eichel, Paul H.; Sleefe, Gerard E.; Stalker, K. Terry; Yee, Amy A.

    2001-01-01

    A system for detecting defects on a moving web having a sequential series of identical frames uses an imaging device to form a real-time camera image of a frame and a comparitor to comparing elements of the camera image with corresponding elements of an image of an exemplar frame. The comparitor provides an acceptable indication if the pair of elements are determined to be statistically identical; and a defective indication if the pair of elements are determined to be statistically not identical. If the pair of elements is neither acceptable nor defective, the comparitor recursively compares the element of said exemplar frame with corresponding elements of other frames on said web until one of the acceptable or defective indications occur.

  5. Shedding Light on Nanocrystal Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shedding Light on Nanocrystal Defects Print Nanocrystals have been the focus of much scientific interest lately, given their various advantageous mechanical properties. Their resistance to stress has had researchers proposing nanocrystals as a promising new protective coating for advanced gas turbine and jet engines. But recent studies conducted at the ALS show that the tiny size of nanocrystals does not safeguard them from defects. Engineering Nanocrystal Materials Most nanocrystal materials

  6. Shedding Light on Nanocrystal Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shedding Light on Nanocrystal Defects Print Nanocrystals have been the focus of much scientific interest lately, given their various advantageous mechanical properties. Their resistance to stress has had researchers proposing nanocrystals as a promising new protective coating for advanced gas turbine and jet engines. But recent studies conducted at the ALS show that the tiny size of nanocrystals does not safeguard them from defects. Engineering Nanocrystal Materials Most nanocrystal materials

  7. Shedding Light on Nanocrystal Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shedding Light on Nanocrystal Defects Print Nanocrystals have been the focus of much scientific interest lately, given their various advantageous mechanical properties. Their resistance to stress has had researchers proposing nanocrystals as a promising new protective coating for advanced gas turbine and jet engines. But recent studies conducted at the ALS show that the tiny size of nanocrystals does not safeguard them from defects. Engineering Nanocrystal Materials Most nanocrystal materials

  8. Shedding Light on Nanocrystal Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shedding Light on Nanocrystal Defects Shedding Light on Nanocrystal Defects Print Thursday, 20 June 2013 10:41 Nanocrystals have been the focus of much scientific interest lately, given their various advantageous mechanical properties. Their resistance to stress has had researchers proposing nanocrystals as a promising new protective coating for advanced gas turbine and jet engines. But recent studies conducted at the ALS show that the tiny size of nanocrystals does not safeguard them from

  9. Shedding Light on Nanocrystal Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shedding Light on Nanocrystal Defects Print Nanocrystals have been the focus of much scientific interest lately, given their various advantageous mechanical properties. Their resistance to stress has had researchers proposing nanocrystals as a promising new protective coating for advanced gas turbine and jet engines. But recent studies conducted at the ALS show that the tiny size of nanocrystals does not safeguard them from defects. Engineering Nanocrystal Materials Most nanocrystal materials

  10. Shedding Light on Nanocrystal Defects

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shedding Light on Nanocrystal Defects Print Nanocrystals have been the focus of much scientific interest lately, given their various advantageous mechanical properties. Their resistance to stress has had researchers proposing nanocrystals as a promising new protective coating for advanced gas turbine and jet engines. But recent studies conducted at the ALS show that the tiny size of nanocrystals does not safeguard them from defects. Engineering Nanocrystal Materials Most nanocrystal materials

  11. Workplace Charging Challenge Partner: The Valley Health System | Department

    Office of Environmental Management (EM)

    Energy IDEXX Laboratories Workplace Charging Challenge Partner: IDEXX Laboratories Workplace Charging Challenge Partner: IDEXX Laboratories Joined the Challenge: November 2014 Headquarters: Westbrook, ME Charging Location: Westbrook, ME Domestic Employees: 4,300 IDEXX Laboratories is committed to providing a multitude of alternative transportation option to employees in the effort to reduce greenhouse gas emissions and increase sustainability efforts. The IDEXX ParXX program encourages

  12. Workplace Charging at Local Businesses | Department of Energy

    Office of Environmental Management (EM)

    Department of Energy Venetian and The Palazzo Workplace Charging Challenge Partner: The Venetian and The Palazzo Workplace Charging Challenge Partner: The Venetian and The Palazzo Joined the Challenge: April 2013 Headquarters: Las Vegas, NV Charging Location: Las Vegas, NV Domestic Employees: 8,445 As part of the hotels' Sands ECO360º Global Sustainability program, The Venetian and The Palazzo have made alternate transportation a priority to help reduce greenhouse gas emissions, conserve

  13. Novolyte Charging Up Electric Vehicle Sector | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Novolyte Charging Up Electric Vehicle Sector Novolyte Charging Up Electric Vehicle Sector August 11, 2010 - 10:15am Addthis Electric vehicles are powered by electricity that comes in the form of electrically charged molecules known as ions. Those ions need a substance to transport them throughout the system as they travel from the anode to the cathode and back again. That substance is an electrolyte. | Staff Photo Illustration Electric vehicles are powered by electricity that comes in the form

  14. Topological defects from the multiverse

    SciTech Connect (OSTI)

    Zhang, Jun; Blanco-Pillado, Jose J.; Garriga, Jaume; Vilenkin, Alexander

    2015-05-28

    Many theories of the early universe predict the existence of a multiverse where bubbles continuously nucleate giving rise to observers in their interior. In this paper, we point out that topological defects of several dimensionalities will also be produced in de Sitter like regions of the multiverse. In particular, defects could be spontaneously nucleated in our parent vacuum. We study the evolution of these defects as they collide with and propagate inside of our bubble. We estimate the present distribution of defects in the observable part of the universe. The expected number of such nearby defects turns out to be quite small, even for the highest nucleation rate. We also study collisions of strings and domain walls with our bubble in our past light cone. We obtain simulated full-sky maps of the loci of such collisions, and find their angular size distribution. Similarly to what happens in the case of bubble collisions, the prospect of detecting any collisions of our bubble with ambient defects is greatly enhanced in the case where the cosmological constant of our parent vacuum is much higher than the vacuum energy density during inflation in our bubble.

  15. Workplace Charging: Safety and Management Policy For Level 1 Charging

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Receptacles | Department of Energy Charging: Safety and Management Policy For Level 1 Charging Receptacles Workplace Charging: Safety and Management Policy For Level 1 Charging Receptacles Organizations offering plug-in electric vehicle (PEV) charging at Level 1 charging receptacles, or wall outlets, can ensure a safe and successful workplace charging experience by considering the following safety and management policies below. More helpful tips on workplace charging administration,

  16. Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces

    SciTech Connect (OSTI)

    Gorai, Prashun; Seebauer, Edmund G.

    2014-07-14

    The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO{sub 2} (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.

  17. Electrical properties and defect structure in the Sr-Fe-Co-O system

    SciTech Connect (OSTI)

    Ma, B.; Chao, C.C.; Park, J.H.

    1995-11-01

    The ceramic Sr-Fe-Co-O has potential use as a membrane in gas separation. This material exhibits high conductivity of both electrons and oxygen ions. It allows oxygen to penetrate at high flux rates without other gas components. Electrical properties are essential to understanding the oxygen transport mechanism and defect structure of this material. By using a gas-tight electrochemical cell with flowing air as the reference environment, we were able to achieve an oxygen partial pressure ({sub p}O{sub 2}) as low as 10{sup -16} atm. Total and ionic conductivities of Sr-Fe-Co-O have been studied as a function of {sub p}O{sub 2} at elevated temperature. In air, both total and ionic conductivities increase with temperature, while the ionic transference number is almost independent of temperature, with a value of {approx}0.4. Experimental results show that ionic conductivity decreases with decreasing {sub p}O{sub 2} at high {sub p}O{sub 2} ({ge}10{sup -6} atm). This suggests that interstitial oxygen ions and electron holes are the dominant charge carriers. At 800{degrees}C in air, total conductivity and ionic conductivity are 17 and 7 S/cm, respectively. Defect dynamics in this system can be understood by means of the trivalence-to-divalence transition of Fe ions when {sub p}O{sub 2} is reduced. By using the conductivity results, we estimated oxygen permeation through a ceramic membrane made of this material. The calculated oxygen permeability agrees with the experimental value obtained directly from an operating methane conversion reactor.

  18. Defect distributions in weld-deposited cladding

    SciTech Connect (OSTI)

    Li, Y.Y.; Mabe, W.R.

    1998-11-01

    Defect distributions in stainless steel and nickel-chromium alloy weld-deposited cladding over a low alloy steel base were characterized by destructive evaluation (DE). An evaluation of the observed defects was conducted to characterize the defects by type or classification. Size distributions of cladding defect types were developed from the information obtained. This paper presents the results of the cladding evaluation.

  19. Workplace Charging Challenge

    Broader source: Energy.gov (indexed) [DOE]

    ... Interactive map available at electricvehicles.energy.gov. lynda.com's PEV charging stations are part of the company's larger commuting program designed to alleviate the impact from ...

  20. Automakers and Workplace Charging

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Challenge Initiative Arguably the most important infrastructure strategy to accelerate adoption of PEVs. Why are we doing Workplace Charging? * PEV Market Growth - Critical now...

  1. System Benefits Charge

    Broader source: Energy.gov [DOE]

    New Hampshire's 1996 electric-industry restructuring legislation authorized the creation of a system benefits charge (SBC) to support energy efficiency programs and energy assistance programs for...

  2. Weather and the Transport of Hazardous Materials | Department...

    Office of Environmental Management (EM)

    Ad Hoc Working Group Transportation Plan Ad Hoc Working Group Guide to Federal Funding, Financing, and Technical Assistance for Plug-in Electric Vehicles and Charging Stations

  3. Chemical Doping Enhances Electronic Transport in Networks of...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    June 12, 2015, Research Highlights Chemical Doping Enhances Electronic Transport in ... Here, it is shown that upon chemical oxidation, hexabenzocoronenes (HBCs) enhance charge ...

  4. Workplace Charging Challenge: Promote Charging at Work | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Promote Charging at Work Workplace Charging Challenge: Promote Charging at Work Workplace Charging Challenge: Promote Charging at Work Employees with access to workplace charging are six times more likely to drive a plug-in electric vehicle (PEV) than the average worker. Promoting PEV charging at workplaces is one great way that states, cities and other organizations can encourage PEV adoption in their communities. Use the material below to engage and educate employers about the

  5. Nanotube-based gas sensors - role of structural defects

    SciTech Connect (OSTI)

    Andzelm, J; Govind, N; Maiti, A

    2005-05-05

    Existing theoretical literature suggests that defect-free, pristine carbon nanotubes (CNTs) interact weakly with many gas molecules like H{sub 2}O, CO, NH{sub 3}, H{sub 2}, and so on. The case of NH{sub 3} is particularly intriguing because this is in disagreement with experimentally observed changes in electrical conductance of CNTs upon exposure to these gases. In order to explain such discrepancy, we have carried out Density Functional Theory (DFT) investigations of the role of common atomistic defects in CNT (Stone-Wales, monovacancy, and interstitial) on the chemisorption of NH{sub 3}. Computed binding energies, charge transfer, dissociation barriers, and vibrational modes are compared with existing experimental results on electrical conductance, thermal desorption and infrared spectroscopy.

  6. Native defects in MBE-grown CdTe

    SciTech Connect (OSTI)

    Olender, Karolina; Wosinski, Tadeusz; Makosa, Andrzej; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz

    2013-12-04

    Deep-level traps in both n- and p-type CdTe layers, grown by molecular-beam epitaxy on GaAs substrates, have been investigated by means of deep-level transient spectroscopy (DLTS). Four of the traps revealed in the DLTS spectra, which displayed exponential kinetics for capture of charge carriers into the trap states, have been assigned to native point defects: Cd interstitial, Cd vacancy, Te antisite defect and a complex formed of the Te antisite and Cd vacancy. Three further traps, displaying logarithmic capture kinetics, have been ascribed to electron states of treading dislocations generated at the mismatched interface with the substrate and propagated through the CdTe layer.

  7. Transportation Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    transportation-research TRACC RESEARCH Computational Fluid Dynamics Computational Structural Mechanics Transportation Systems Modeling Transportation Research Current Research Overview The U.S. Department of Transportation (USDOT) has established its only high-performance computing and engineering analysis research facility at Argonne National Laboratory to provide applications support in key areas of applied research and development for the USDOT community. The Transportation Research and

  8. Radiation Transport

    SciTech Connect (OSTI)

    Urbatsch, Todd James

    2015-06-15

    We present an overview of radiation transport, covering terminology, blackbody raditation, opacities, Boltzmann transport theory, approximations to the transport equation. Next we introduce several transport methods. We present a section on Caseology, observing transport boundary layers. We briefly broach topics of software development, including verification and validation, and we close with a section on high energy-density experiments that highlight and support radiation transport.

  9. A theoretical study of the stability of anionic defects in cubic ZrO2 at extreme conditions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Samanta, Amit

    2016-02-19

    Using first principles density functional theory calculations, we present a study of the structure, mobility, and the thermodynamic stability of anionic defects in the high-temperature cubic phase of ZrO2. Our results suggest that the local structure of an oxygen interstitial depends on the charge state and the cubic symmetry of the anionic sublattice is unstable at 0 K. In addition, the oxygen interstitials and the vacancies exhibit symmetry breaking transitions to low-energy structures with tetragonal distortion of the oxygen sublattice at 0 K. However, the vibrational entropy stabilizes the defect structures with cubic symmetry at 2600–2980 K. The formation freemore » energies of the anionic defects and Gibbs free energy changes associated with different defect reactions are calculated by including the vibrational free energy contributions and the effect of pressure on these defect structures. By analyzing the defect chemistry, we obtain the defect concentrations at finite temperature and pressure conditions using the zero temperature ab initio results as input and find that at low oxygen partial pressures, neutral oxygen vacancies are most dominant and at high oxygen partial pressures, doubly charged anionic defects are dominant. As a result, the relevance of the results to the thermal protective coating capabilities of zirconium-based ceramic composites is elucidated.« less

  10. Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

    SciTech Connect (OSTI)

    Venkatesh, S.; Roqan, I. S.; Franklin, J. B.; Ryan, M. P.; McLachlan, M. A.; Alford, N. M.; Lee, J.-S.; Ohldag, Hendrik

    2015-01-07

    Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (transport properties showed that the ferromagnetic exchange is mediated by a spin-split defect band formed due to oxygen deficiency related defect complexes. Mott's theory of variable range of hopping conduction confirms the formation of the impurity/defect band near the Fermi level.

  11. Workplace Charging Challenge: Install and Manage PEV Charging...

    Office of Environmental Management (EM)

    ...vworkplacecharginghosts150x194.jpg To determine if workplace charging is right for your organization, use the employer resources to learn more about PEVs and charging stations. ...

  12. Evaluating Electric Vehicle Charging Impacts and Customer Charging...

    Office of Environmental Management (EM)

    Under OE's Smart Grid Investment Grant (SGIG) program, six utilities evaluated operations and customer charging behaviors for in-home and public electric vehicle charging stations. ...

  13. Chamber transport

    SciTech Connect (OSTI)

    OLSON,CRAIG L.

    2000-05-17

    Heavy ion beam transport through the containment chamber plays a crucial role in all heavy ion fusion (HIF) scenarios. Here, several parameters are used to characterize the operating space for HIF beams; transport modes are assessed in relation to evolving target/accelerator requirements; results of recent relevant experiments and simulations of HIF transport are summarized; and relevant instabilities are reviewed. All transport options still exist, including (1) vacuum ballistic transport, (2) neutralized ballistic transport, and (3) channel-like transport. Presently, the European HIF program favors vacuum ballistic transport, while the US HIF program favors neutralized ballistic transport with channel-like transport as an alternate approach. Further transport research is needed to clearly guide selection of the most attractive, integrated HIF system.

  14. Automakers and Workplace Charging

    Broader source: Energy.gov (indexed) [DOE]

    Maryland 8 Connecticut 2 Kentucky 12 Georgia 2 New York 51 Ohio 44 Michigan 299 Indiana 8 Illinois 4 Kansas 2 Arizona 2 Texas 3 California 32 473 GM WORKPLACE CHARGING STATIONS ...

  15. Trends in Workplace Charging

    Broader source: Energy.gov (indexed) [DOE]

    *Based on Energy Charges Only using an average annual electricity consumption for a U.S. residential utility customer of 11,496 kWh (EIA http:www.eia.gov). (WASHINGTON, ...

  16. Trends in Workplace Charging

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Donofrio Ford Motor Company Trends in Workplace Charging Est EV NA NA approx 21 70-100 Miles: What Types of Chargers are Being Used? Considerations for Campus Installations *...

  17. Societal Benefits Charge

    Broader source: Energy.gov [DOE]

    During 2011 and 2012 several minor changes were made to the originally enacted SBC law. In 2011 a section was added prohibiting gas utilities from imposing an SBC charge (or several other types o...

  18. Influence of deep level defects on carrier lifetime in CdZnTe:In

    SciTech Connect (OSTI)

    Guo, Rongrong; Jie, Wanqi Wang, Ning; Zha, Gangqiang; Xu, Yadong; Wang, Tao; Fu, Xu

    2015-03-07

    The defect levels and carrier lifetime in CdZnTe:In crystal were characterized with photoluminescence, thermally stimulated current measurements, as well as contactless microwave photoconductivity decay (MWPCD) technique. An evaluation equation to extract the recombination lifetime and the reemission time from MWPCD signal is developed based on Hornbeck-Haynes trapping model. An excellent agreement between defect level distribution and carrier reemission time in MWPCD signal reveals the tail of the photoconductivity decay is controlled by the defect level reemission effect. Combining {sup 241}Am gamma ray radiation response measurement and laser beam induced transient current measurement, it predicted that defect level with the reemission time shorter than the collection time could lead to better charge collection efficiency of CdZnTe detector.

  19. Electrically charged targets

    DOE Patents [OSTI]

    Goodman, Ronald K.; Hunt, Angus L.

    1984-01-01

    Electrically chargeable laser targets and method for forming such charged targets in order to improve their guidance along a predetermined desired trajectory. This is accomplished by the incorporation of a small amount of an additive to the target material which will increase the electrical conductivity thereof, and thereby enhance the charge placed upon the target material for guidance thereof by electrostatic or magnetic steering mechanisms, without adversely affecting the target when illuminated by laser energy.

  20. Nissan EV Workplace Charging Program

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Nissan EV Workplace Charging Program Workplace Charging Value Creation Value Proposition Nissan Support For Employer For Employee For Employee * Unique employee benefit * ...

  1. Demand Charges | Open Energy Information

    Open Energy Info (EERE)

    Demand Charges Jump to: navigation, search Retrieved from "http:en.openei.orgwindex.php?titleDemandCharges&oldid488967" Feedback Contact needs updating Image needs...

  2. Defect tolerant transmission lithography mask

    DOE Patents [OSTI]

    Vernon, Stephen P.

    2000-01-01

    A transmission lithography mask that utilizes a transparent substrate or a partially transparent membrane as the active region of the mask. A reflective single layer or multilayer coating is deposited on the membrane surface facing the illumination system. The coating is selectively patterned (removed) to form transmissive (bright) regions. Structural imperfections and defects in the coating have negligible effect on the aerial image of the mask master pattern since the coating is used to reflect radiation out of the entrance pupil of the imaging system. Similarly, structural imperfections in the clear regions of the membrane have little influence on the amplitude or phase of the transmitted electromagnetic fields. Since the mask "discards," rather than absorbs, unwanted radiation, it has reduced optical absorption and reduced thermal loading as compared to conventional designs. For EUV applications, the mask circumvents the phase defect problem, and is independent of the thermal load during exposure.

  3. Inspection of lithographic mask blanks for defects

    DOE Patents [OSTI]

    Sommargren, Gary E.

    2001-01-01

    A visible light method for detecting sub-100 nm size defects on mask blanks used for lithography. By using optical heterodyne techniques, detection of the scattered light can be significantly enhanced as compared to standard intensity detection methods. The invention is useful in the inspection of super-polished surfaces for isolated surface defects or particulate contamination and in the inspection of lithographic mask or reticle blanks for surface defects or bulk defects or for surface particulate contamination.

  4. Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer

    DOE Patents [OSTI]

    Warren, W.L.; Vanheusden, K.J.R.; Schwank, J.R.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.

    1998-07-28

    A method is disclosed for screening or qualifying semiconductor substrates for integrated circuit fabrication. The method comprises the steps of annealing at least one semiconductor substrate at a first temperature in a defect-activating ambient (e.g. hydrogen, forming gas, or ammonia) for sufficient time for activating any defects within on oxide layer of the substrate; measuring a defect-revealing electrical characteristic of at least a portion of the oxide layer for determining a quantity of activated defects therein; and selecting substrates for which the quantity of activated defects is below a predetermined level. The defect-revealing electrical characteristic may be a capacitance-versus voltage (C-V) characteristic or a current-versus-voltage (I-V) characteristic that is dependent on an electrical charge in the oxide layer generated by the activated defects. Embodiments of the present invention may be applied for screening any type of semiconductor substrate or wafer having an oxide layer formed thereon or therein. This includes silicon-on-insulator substrates formed by a separation by the implantation of oxygen (SIMOX) process or the bond and etch back silicon-on-insulator (BESOI) process, as well as silicon substrates having a thermal oxide layer or a deposited oxide layer. 5 figs.

  5. Optical method and apparatus for detection of surface and near-subsurface defects in dense ceramics

    DOE Patents [OSTI]

    Ellingson, W.A.; Brada, M.P.

    1995-06-20

    A laser is used in a non-destructive manner to detect surface and near-subsurface defects in dense ceramics and particularly in ceramic bodies with complex shapes such as ceramic bearings, turbine blades, races, and the like. The laser`s wavelength is selected based upon the composition of the ceramic sample and the laser can be directed on the sample while the sample is static or in dynamic rotate or translate motion. Light is scattered off surface and subsurface defects using a preselected polarization. The change in polarization angle is used to select the depth and characteristics of surface/subsurface defects. The scattered light is detected by an optical train consisting of a charge coupled device (CCD), or vidicon, television camera which, in turn, is coupled to a video monitor and a computer for digitizing the image. An analyzing polarizer in the optical train allows scattered light at a given polarization angle to be observed for enhancing sensitivity to either surface or near-subsurface defects. Application of digital image processing allows subtraction of digitized images in near real-time providing enhanced sensitivity to subsurface defects. Storing known ``feature masks`` of identified defects in the computer and comparing the detected scatter pattern (Fourier images) with the stored feature masks allows for automatic classification of detected defects. 29 figs.

  6. Optical method and apparatus for detection of surface and near-subsurface defects in dense ceramics

    DOE Patents [OSTI]

    Ellingson, William A.; Brada, Mark P.

    1995-01-01

    A laser is used in a non-destructive manner to detect surface and near-subsurface defects in dense ceramics and particularly in ceramic bodies with complex shapes such as ceramic bearings, turbine blades, races, and the like. The laser's wavelength is selected based upon the composition of the ceramic sample and the laser can be directed on the sample while the sample is static or in dynamic rotate or translate motion. Light is scattered off surface and subsurface defects using a preselected polarization. The change in polarization angle is used to select the depth and characteristics of surface/subsurface defects. The scattered light is detected by an optical train consisting of a charge coupled device (CCD), or vidicon, television camera which, in turn, is coupled to a video monitor and a computer for digitizing the image. An analyzing polarizer in the optical train allows scattered light at a given polarization angle to be observed for enhancing sensitivity to either surface or near-subsurface defects. Application of digital image processing allows subtraction of digitized images in near real-time providing enhanced sensitivity to subsurface defects. Storing known "feature masks" of identified defects in the computer and comparing the detected scatter pattern (Fourier images) with the stored feature masks allows for automatic classification of detected defects.

  7. Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer

    DOE Patents [OSTI]

    Warren, William L.; Vanheusden, Karel J. R.; Schwank, James R.; Fleetwood, Daniel M.; Shaneyfelt, Marty R.; Winokur, Peter S.; Devine, Roderick A. B.

    1998-01-01

    A method for screening or qualifying semiconductor substrates for integrated circuit fabrication. The method comprises the steps of annealing at least one semiconductor substrate at a first temperature in a defect-activating ambient (e.g. hydrogen, forming gas, or ammonia) for sufficient time for activating any defects within on oxide layer of the substrate; measuring a defect-revealing electrical characteristic of at least a portion of the oxide layer for determining a quantity of activated defects therein; and selecting substrates for which the quantity of activated defects is below a predetermined level. The defect-revealing electrical characteristic may be a capacitance-versus-voltage (C-V) characteristic or a current-versus-voltage (I-V) characteristic that is dependent on an electrical charge in the oxide layer generated by the activated defects. Embodiments of the present invention may be applied for screening any type of semiconductor substrate or wafer having an oxide layer formed thereon or therein. This includes silicon-on-insulator substrates formed by a separation by the implantation of oxygen (SIMOX) process or the bond and etch back silicon-on-insulator (BESOI) process, as well as silicon substrates having a thermal oxide layer or a deposited oxide layer.

  8. Workplace Charging Challenge Progress Update 2014

    Broader source: Energy.gov (indexed) [DOE]

    Locations with Charging Workplace Charging Challenge 6 Installing & Planned Charging Stations Almost Doubled in the Last 2 Years Workplace Charging Challenge 7 Partner plans ...

  9. Vehicle Technologies Office: Workplace Charging Challenge Progress...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Workplace Charging Challenge Progress Update 2014 - Employers Take Charge Vehicle Technologies Office: Workplace Charging Challenge Progress Update 2014 - Employers Take Charge In ...

  10. EV Everywhere: Workplace Charging | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Vehicle Charging EV Everywhere: Workplace Charging EV Everywhere: Workplace Charging Most plug-in electric vehicle (EV) owners charge their vehicles primarily at home, but ...

  11. Effects of Stone-Wales and vacancy defects in atomic-scale friction on defective graphite

    SciTech Connect (OSTI)

    Sun, Xiao-Yu; Wu, RunNi; Xia, Re; Chu, Xi-Hua; Xu, Yuan-Jie

    2014-05-05

    Graphite is an excellent solid lubricant for surface coating, but its performance is significantly weakened by the vacancy or Stone-Wales (SW) defect. This study uses molecular dynamics simulations to explore the frictional behavior of a diamond tip sliding over a graphite which contains a single defect or stacked defects. Our results suggest that the friction on defective graphite shows a strong dependence on defect location and type. The 5-7-7-5 structure of SW defect results in an effectively negative slope of friction. For defective graphite containing a defect in the surface, adding a single vacancy in the interior layer will decrease the friction coefficients, while setting a SW defect in the interior layer may increase the friction coefficients. Our obtained results may provide useful information for understanding the atomic-scale friction properties of defective graphite.

  12. OXYGEN TRANSPORT CERAMIC MEMBRANES

    SciTech Connect (OSTI)

    Dr. Sukumar Bandopadhyay; Dr. Nagendra Nagabhushana

    2000-10-01

    This is the third quarterly report on oxygen Transport Ceramic Membranes. In the following, the report describes the progress made by our university partners in Tasks 1 through 6, experimental apparatus that was designed and built for various tasks of this project, thermodynamic calculations, where applicable and work planned for the future. (Task 1) Design, fabricate and evaluate ceramic to metal seals based on graded ceramic powder/metal braze joints. (Task 2) Evaluate the effect of defect configuration on ceramic membrane conductivity and long term chemical and structural stability. (Task 3) Determine materials mechanical properties under conditions of high temperatures and reactive atmospheres. (Task 4) Evaluate phase stability and thermal expansion of candidate perovskite membranes and develop techniques to support these materials on porous metal structures. (Task 5) Assess the microstructure of membrane materials to evaluate the effects of vacancy-impurity association, defect clusters, and vacancy-dopant association on the membrane performance and stability. (Task 6) Measure kinetics of oxygen uptake and transport in ceramic membrane materials under commercially relevant conditions using isotope labeling techniques.

  13. Selecting the best defect reduction methodology

    SciTech Connect (OSTI)

    Hinckley, C.M.; Barkan, P.

    1994-04-01

    Defect rates less than 10 parts per million, unimaginable a few years ago, have become the standard of world-class quality. To reduce defects, companies are aggressively implementing various quality methodologies, such as Statistical Quality Control Motorola`s Six Sigma, or Shingo`s poka-yok. Although each quality methodology reduces defects, selection has been based on an intuitive sense without understanding their relative effectiveness in each application. A missing link in developing superior defect reduction strategies has been a lack of a general defect model that clarifies the unique focus of each method. Toward the goal of efficient defect reduction, we have developed an event tree which addresses a broad spectrum of quality factors and two defect sources, namely, error and variation. The Quality Control Tree (QCT) predictions are more consistent with production experience than obtained by the other methodologies considered independently. The QCT demonstrates that world-class defect rates cannot be achieved through focusing on a single defect source or quality control factor, a common weakness of many methodologies. We have shown that the most efficient defect reduction strategy depend on the relative strengths and weaknesses of each organization. The QCT can help each organization identify the most promising defect reduction opportunities for achieving its goals.

  14. ION PRODUCING MECHANISM (CHARGE CUPS)

    DOE Patents [OSTI]

    Brobeck, W.W.

    1959-04-21

    The problems of confining a charge material in a calutron and uniformly distributing heat to the charge is described. The charge is held in a cup of thermally conductive material removably disposed within the charge chamber of the ion source block. A central thermally conducting stem is incorporated within the cup for conducting heat to the central portion of the charge contained within the cup.

  15. On nuclear reactions in defects

    SciTech Connect (OSTI)

    Sienes, J.K. )

    1991-05-01

    The variability of results concerning cold fusion, together with the difficulty of explaining the observations, suggests that some nonstandard processes may be occurring. One such possibility is that nuclear reactions occur in defects of a deuterated lattice as a result of transient motions that momentarily bring deuterium atoms into close proximity. In this paper a mechanism involving shear of a one-dimensional lattice is described that illustrates this possibility. Order-of-magnitude estimates indicate that the expected fusion rate is not inconsistent with some experiments.

  16. Beam Transport

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Beam Transport A simplified drawing of the beam transport system from the linac to Target-1 (Lujan Center), Target-2 (Blue Room) and Target-4 is shown below. In usual operation ...

  17. WIPP Transportation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transuranic Waste Transportation Container Documents Documents related to transuranic waste containers and packages. CBFO Tribal Program Information about WIPP shipments across tribal lands. Transportation Centralized Procurement Program - The Centralized Procurement Program provides a common method to procure standard items used in the packaging and handling of transuranic wasted destined for WIPP. Transuranic Waste Transportation Routes - A map showing transuranic waste generator sites and

  18. Tuning Interfacial Thermal Conductance of Graphene Embedded in Soft Materials by Vacancy Defects

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liu, Ying; Hu, Chongze; Huang, Jingsong; Sumpter, Bobby G; Qiao, Rui

    2015-01-01

    Nanocomposites based on graphene dispersed in matrices of soft materials are promising thermal management materials. Their effective thermal conductivity depends on both the thermal conductivity of graphene and the conductance of the thermal transport across graphene-matrix interfaces. Here we report on molecular dynamics simulations of the thermal transport across the interfaces between defected graphene and soft materials in two different modes: in the across mode, heat enters graphene from one side of its basal plane and leaves through the other side; in the non-across mode, heat enters or leaves a graphene simultaneously from both sides of its basal plane. Wemore » show that, as the density of vacancy defects in graphene increases from 0 to 8%, the conductance of the interfacial thermal transport in the across mode increases from 160.4 16 to 207.8 11 MW/m2K, while that in the non-across mode increases from 7.2 0.1 to 17.8 0.6 MW/m2K. The molecular mechanisms for these variations of thermal conductance are clarified by using the phonon density of states and structural characteristics of defected graphenes. On the basis of these results and effective medium theory, we show that it is possible to enhance the effective thermal conductivity of thermal nanocomposites by tuning the density of vacancy defects in graphene despite the fact that graphene s thermal conductivity always decreases as vacancy defects are introduced.« less

  19. Tuning Interfacial Thermal Conductance of Graphene Embedded in Soft Materials by Vacancy Defects

    SciTech Connect (OSTI)

    Liu, Ying; Hu, Chongze; Huang, Jingsong; Sumpter, Bobby G; Qiao, Rui

    2015-01-01

    Nanocomposites based on graphene dispersed in matrices of soft materials are promising thermal management materials. Their effective thermal conductivity depends on both the thermal conductivity of graphene and the conductance of the thermal transport across graphene-matrix interfaces. Here we report on molecular dynamics simulations of the thermal transport across the interfaces between defected graphene and soft materials in two different modes: in the across mode, heat enters graphene from one side of its basal plane and leaves through the other side; in the non-across mode, heat enters or leaves a graphene simultaneously from both sides of its basal plane. We show that, as the density of vacancy defects in graphene increases from 0 to 8%, the conductance of the interfacial thermal transport in the across mode increases from 160.4 16 to 207.8 11 MW/m2K, while that in the non-across mode increases from 7.2 0.1 to 17.8 0.6 MW/m2K. The molecular mechanisms for these variations of thermal conductance are clarified by using the phonon density of states and structural characteristics of defected graphenes. On the basis of these results and effective medium theory, we show that it is possible to enhance the effective thermal conductivity of thermal nanocomposites by tuning the density of vacancy defects in graphene despite the fact that graphene s thermal conductivity always decreases as vacancy defects are introduced.

  20. Nonlinear space charge dynamics in mixed ionic-electronic conductors: Resistive switching and ferroelectric-like hysteresis of electromechanical response

    SciTech Connect (OSTI)

    Morozovska, Anna N.; Morozovsky, Nicholas V.; Eliseev, Eugene A.; Varenyk, Olexandr V.; Kim, Yunseok; Strelcov, Evgheni; Tselev, Alexander; Kalinin, Sergei V.

    2014-08-14

    We performed self-consistent modelling of nonlinear electrotransport and electromechanical response of thin films of mixed ionic-electronic conductors (MIEC) allowing for steric effects of mobile charged defects (ions, protons, or vacancies), electron degeneration, and Vegard stresses. We establish correlations between the features of the nonlinear space-charge dynamics, current-voltage, and bending-voltage curves for different types of the film electrodes. A pronounced ferroelectric-like hysteresis of the bending-voltage loops and current maxima on the double hysteresis current-voltage loops appear for the electron-transport electrodes. The double hysteresis loop with pronounced humps indicates a memristor-type resistive switching. The switching occurs due to the strong nonlinear coupling between the electronic and ionic subsystems. A sharp meta-stable maximum of the electron density appears near one open electrode and moves to another one during the periodic change of applied voltage. Our results can explain the nonlinear nature and correlation of electrical and mechanical memory effects in thin MIEC films. The analytical expression proving that the electrically induced bending of MIEC films can be detected by interferometric methods is derived.

  1. Collision integrals for charged-charged interaction in two-temperature non-equilibrium plasma

    SciTech Connect (OSTI)

    Ghorui, S.; Das, A. K.

    2013-09-15

    Choice of an appropriate form of shielding distance in the estimation of collision integrals under screened coulomb potential for two-temperature non-equilibrium plasma is addressed. Simple expressions for collision integrals for charged-charged interactions are derived. It is shown that while some of the formalisms used earlier completely ignore the presence of ions, the others incorporating it may result in negative collision integrals for the interactions involving particles at higher charged states. The parametric regimes of concern and impact of different formalisms on the computed transport properties are investigated with specific reference to nitrogen plasma. A revised definition of the shielding distance is proposed, which incorporates both electrons and ions, avoids the problem of negative collision integrals in all practical regimes of interest and results in calculated property values in close agreement with experimentally observed results.

  2. Charges/Reports | U.S. DOE Office of Science (SC)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy ChargePoint is Helping Electrify America's Transportation ChargePoint is Helping Electrify America's Transportation September 17, 2014 - 9:07am Addthis A plug-in electric vehicle (PEV) charging station in Rhode Island. | Photo courtesy of the University of Rhode Island. A plug-in electric vehicle (PEV) charging station in Rhode Island. | Photo courtesy of the University of Rhode Island. Shannon Brescher Shea Senior Writer/Editor, Office of Science This is part three of a four-post

  3. Vehicle Technologies Office: Transportation System Analytical Tools |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Modeling, Testing, Data & Results » Vehicle Technologies Office: Transportation System Analytical Tools Vehicle Technologies Office: Transportation System Analytical Tools The Vehicle Technologies Office (VTO) has supported the development of a number of software packages and online tools to model individual vehicles and the overall transportation system. Most of these tools are available for free or a nominal charge. Modeling tools that simulate entire vehicles and

  4. Experimental evidence on removing copper and light-induced degradation from silicon by negative charge

    SciTech Connect (OSTI)

    Boulfrad, Yacine Lindroos, Jeanette; Yli-Koski, Marko; Savin, Hele; Wagner, Matthias; Wolny, Franziska

    2014-11-03

    In addition to boron and oxygen, copper is also known to cause light-induced degradation (LID) in silicon. We have demonstrated previously that LID can be prevented by depositing negative corona charge onto the wafer surfaces. Positively charged interstitial copper ions are proposed to diffuse to the negatively charged surface and consequently empty the bulk of copper. In this study, copper out-diffusion was confirmed by chemical analysis of the near surface region of negatively/positively charged silicon wafer. Furthermore, LID was permanently removed by etching the copper-rich surface layer after negative charge deposition. These results demonstrate that (i) copper can be effectively removed from the bulk by negative charge, (ii) under illumination copper forms a recombination active defect in the bulk of the wafer causing severe light induced degradation.

  5. Low energy charged particles interacting with amorphous solid water layers

    SciTech Connect (OSTI)

    Horowitz, Yonatan; Asscher, Micha

    2012-04-07

    The interaction of charged particles with condensed water films has been studied extensively in recent years due to its importance in biological systems, ecology as well as interstellar processes. We have studied low energy electrons (3-25 eV) and positive argon ions (55 eV) charging effects on amorphous solid water (ASW) and ice films, 120-1080 ML thick, deposited on ruthenium single crystal under ultrahigh vacuum conditions. Charging the ASW films by both electrons and positive argon ions has been measured using a Kelvin probe for contact potential difference (CPD) detection and found to obey plate capacitor physics. The incoming electrons kinetic energy has defined the maximum measurable CPD values by retarding further impinging electrons. L-defects (shallow traps) are suggested to be populated by the penetrating electrons and stabilize them. Low energy electron transmission measurements (currents of 0.4-1.5 {mu}A) have shown that the maximal and stable CPD values were obtained only after a relatively slow change has been completed within the ASW structure. Once the film has been stabilized, the spontaneous discharge was measured over a period of several hours at 103 {+-} 2 K. Finally, UV laser photo-emission study of the charged films has suggested that the negative charges tend to reside primarily at the ASW-vacuum interface, in good agreement with the known behavior of charged water clusters.

  6. Gated charged-particle trap

    DOE Patents [OSTI]

    Benner, W. Henry

    1999-01-01

    The design and operation of a new type of charged-particle trap provides simultaneous measurements of mass, charge, and velocity of large electrospray ions. The trap consists of a detector tube mounted between two sets of center-bored trapping plates. Voltages applied to the trapping plates define symmetrically-opposing potential valleys which guide axially-injected ions to cycle back and forth through the charge-detection tube. A low noise charge-sensitive amplifier, connected to the tube, reproduces the image charge of individual ions as they pass through the detector tube. Ion mass is calculated from measurement of ion charge and velocity following each passage through the detector.

  7. Could Material Defects Actually Improve Solar Cells?

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Could Material Defects Actually Improve Solar Cells? Could Material Defects Actually Improve Solar Cells? March 21, 2016 Contact: Kathy Kincade, kkincade@lbl.gov, +1 510 495 2124 NRELsolarcell Scientists at the U.S. Department of Energy's (DOE) National Renewable Energy Laboratory (NREL) are using supercomputers to study what may seem paradoxical: certain defects in silicon solar cells may actually improve their performance. The findings, published January 11, 2016 in Applied Physics Letters,

  8. Workplace Charging Challenge: Sample Municipal Workplace Charging Agreement

    Broader source: Energy.gov [DOE]

    Review the agreement proposed by one municipality to register PEV drivers and inform staff of charging policy.

  9. Research Challenge 4: Defect-Carrier Interactions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4: Defect-Carrier Interactions - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary ...

  10. Distributed charging of electrical assets

    DOE Patents [OSTI]

    Ghosh, Soumyadip; Phan, Dung; Sharma, Mayank; Wu, Chai Wah; Xiong, Jinjun

    2016-02-16

    The present disclosure relates generally to the field of distributed charging of electrical assets. In various examples, distributed charging of electrical assets may be implemented in the form of systems, methods and/or algorithms.