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Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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1

Mexico FL GA SC AL MS LA TX AR TN TN  

NLE Websites -- All DOE Office Websites (Extended Search)

2005 Hurricanes on the Natural Gas Industry in the Gulf of Mexico Region Mexico FL GA SC AL MS LA TX AR TN TN Katrina - Cumulative wind > 39 mph Katrina - Cumulative wind > 73 mph...

2

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

0.00-1.99 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 1996 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 1996 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." Note: In 1996, consumption of natural gas for agricultural use

3

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY...

4

Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation dose on dc characteristics and the reliability of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. The HEMTs were irradiated with protons at a fixed energy of 5 MeV and doses ranging from 109 to 2 1014 cm-2. For the dc characteristics, there was only minimal degradation of saturation drain current (IDSS), transconductance (gm), electron mobility and sheet carrier concentration at doses below 2 1013 cm-2, while the reduction of these parameters were 15%, 9%, 41% and 16.6%, respectively, at a dose of 2 1014 cm-2. At this same dose condition, increases of 37% in drain breakdown voltage (VBR) and of 45% in critical voltage (Vcri) were observed. The improvement of device reliability was attributed to the modification of the depletion region due to the introduction of a higher density of defects after irradiation at a higher dose.

Liu, L. [University of Florida, Gainesville; Cuervo, C.V. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

5

US SoAtl FL Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

80% 100% US SoAtl FL OtherNone Propane Electricity Natural Gas MAIN HEATING FUEL USED COOLING EQUIPMENT USED DIVISION: South Atlantic (SoAtl) STATES INCLUDED: Delaware, DC,...

6

dc field-emission analysis of GaAs and plasma-source ion-implanted stainless steel  

DOE Green Energy (OSTI)

Field-emission studies have been performed on a GaAs wafer and a sample of its stainless-steel (SS) support electrode that are part of a photocathode gun for the 10 kW Upgrade infrared free electron laser at Jefferson Lab. The objective of the studies presented here is to characterize the effect of both the cleanliness of the wafer and the plasma-source ion-implanted layer on the electrode to suppress field emission. Field emission is the limiting factor to achieve the required 6 MV/m at the surface of the wafer. Potential field emitters are first located on the surface of 1 in. diameter samples with a dc scanning field-emission microscope at 60 MV/m, then each emitter is characterized in a scanning electron microscope equipped with an energy dispersive spectrometer. The GaAs wafer was hydrogen cleaned before the study. The results show three emitters caused by indium contamination during wafer handling. The GaAs wafer thus shows good high-voltage characteristics and the need to maintain cleanliness during handling. The SS sample is hand polished with diamond paste to a 1-m surface finish, then implanted with N2/SiO2 in a plasma-source ion-implantation chamber in preparation for the field-emission studies.

C. Hernandez; T. Wang; T. Siggins; D. Bullard; H. F. Dylla; C. Reece; N. D. Theodore; D. M. Manos

2003-06-01T23:59:59.000Z

7

Comparison of dc performance of Pt/Ti/Au- and Ni/Au-Gated AlGaN/GaN High Electron Mobility Transistors  

Science Conference Proceedings (OSTI)

We have demonstrated significant improvements of AlGaN/GaN High Electron Mobility Transistors (HEMTs) dc performance by employing Pt/Ti/Au instead of the conventional Ni/Au gate metallization. During off-state bias stressing, the typical critical voltage for HEMTs with Ni/Au gate metallization was ~ -45 to -65V. By sharp contrast, no critical voltage was observed for HEMTs with Pt/Ti/Au gate metallization, even up to -100V, which was the instrumental limitation in this experiment. After the off-state stressing, the drain current of Ni/Au gated-HEMTs decreased by~ 15%. For the Pt-gate HEMTs, no degradation of the drain current occurred and there were minimal changes in the Schottky gate characteristics for both forward and reverse bias conditions. The HEMTs with Pt/Ti/Au metallization showed an excellent drain on/off current ratio of 1.5 108. The on/off drain current ratio of Ni-gated HEMTs was dependent on the drain bias voltage and ranged from 1.2 107 at Vds=5V and 6 105

Liu, L. [University of Florida, Gainesville; Lo, C. F. [University of Florida; Kang, Tsung Sheng [University of Florida, Gainesville; Pearton, S. J. [University of Florida; Kravchenko, Ivan I [ORNL; Laboutin, O. [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Ren, F. [University of Florida

2011-01-01T23:59:59.000Z

8

PMC·I'Fl.  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

I'Fl. I'Fl. 1)··1.0) , u.s. DEPARTUENT OF ENERGY EERE PROJECT M ANAGEMENT CENTER NEPA DETERl\IINATION RECIPIENT:Escambia County PROJECT TITLE: Landfill Gas Extraction and Control System Expansion and Modernization Page I of2 STATE: FL Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number DE-FOA-0000013 DE-EE0000784 0 Based on my review of the information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 451.1A), I have made the following determination: CX, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling). document preparation (such as conceptual design or feasibility studies, analytical energy supply

9

Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 21011 to 21015 cm2. The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 21015 cm2, both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 21011 to 21015 cm2 exhibited minimal degradation of the saturation drain current and extrinsic trans- conductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present. VC 2011 American Vacuum Society. [DOI: 10.1116/1.3644480

Lo, C. F. [University of Florida; Liu, L. [University of Florida, Gainesville; Ren, F. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2011-01-01T23:59:59.000Z

10

Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation energy on dc and rf characteristics of InAlN/GaN high electron mobility transistors (HEMTs) were investigated. A fixed proton dose of 51015 cm2 with 5, 10, and 15 MeV irradiation energies was used in this study. For the dc characteristics, degradation was observed for sheet resistance, transfer resistance, contact resistivity, saturation drain current, maximum transconductance, reverse-bias gate leakage current, and sub-threshold drain leakage current for all the irradiated HEMTs; however, the degree of the degradation was decreased as the irradiation energy increased. Similar trends were obtained for the rf performance of the devices, with 10% degradation of the unity gain cut-off frequency (fT) and maximum oscillation frequency ( fmax) for the HEMTs irradiated with 15 MeV protons but 30% for 5 MeV proton irradiation. The carrier removal rate was in the range 0.66 1.24 cm1 over the range of proton energies investigated

Lo, C. F. [University of Florida; Liu, L. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Gila, Brent P. [University of Florida, Gainesville; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

11

Status of High Polarization DC High Voltage GaAs Photoguns  

SciTech Connect

This talk will review the state of the art of high polarization GaAs photoguns used worldwide. Subject matter will include drive laser technology, photocathode material, gun design, vacuum requirements and photocathode lifetime as a function of beam current. Recent results have demonstrated high current, 85% polarized beams with high reliability and long lifetime under operational conditions. Research initiatives for ensuring production of high average and peak current beams for future accelerator facilities such as ELIC and the ILC will be also discussed.

P. A. Adderley; J. Brittian; J. Clark; J. Grames; J. Hansknecht; J. McCarter; M. Poelker; M. L. Stutzman; R. Suleiman; K. E. L. Surles-Law

2007-08-01T23:59:59.000Z

12

Category:Miami, FL | Open Energy Information  

Open Energy Info (EERE)

Miami, FL" Miami, FL" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Miami FL Florida Power & Light Co..png SVFullServiceRestauran... 77 KB SVHospital Miami FL Florida Power & Light Co..png SVHospital Miami FL Fl... 80 KB SVLargeHotel Miami FL Florida Power & Light Co..png SVLargeHotel Miami FL ... 78 KB SVLargeOffice Miami FL Florida Power & Light Co..png SVLargeOffice Miami FL... 76 KB SVMediumOffice Miami FL Florida Power & Light Co..png SVMediumOffice Miami F... 79 KB SVMidriseApartment Miami FL Florida Power & Light Co..png SVMidriseApartment Mia... 78 KB SVOutPatient Miami FL Florida Power & Light Co..png SVOutPatient Miami FL ... 77 KB SVPrimarySchool Miami FL Florida Power & Light Co..png SVPrimarySchool Miami ...

13

Category:Tampa, FL | Open Energy Information  

Open Energy Info (EERE)

Tampa, FL" Tampa, FL" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Tampa FL Florida Power & Light Co..png SVFullServiceRestauran... 77 KB SVHospital Tampa FL Florida Power & Light Co..png SVHospital Tampa FL Fl... 80 KB SVLargeHotel Tampa FL Florida Power & Light Co..png SVLargeHotel Tampa FL ... 77 KB SVLargeOffice Tampa FL Florida Power & Light Co..png SVLargeOffice Tampa FL... 76 KB SVMediumOffice Tampa FL Florida Power & Light Co..png SVMediumOffice Tampa F... 78 KB SVMidriseApartment Tampa FL Florida Power & Light Co..png SVMidriseApartment Tam... 78 KB SVOutPatient Tampa FL Florida Power & Light Co..png SVOutPatient Tampa FL ... 77 KB SVPrimarySchool Tampa FL Florida Power & Light Co..png SVPrimarySchool Tampa ...

14

FL J. Smith, Jr.  

Office of Legacy Management (LM)

ct. B. Duillap ct. B. Duillap (THPJJs L. Kassel) FL J. Smith, Jr. c c Kelley from R. 1. Cook, Kslley from R. 1. Cook, J J cit cit In accordawe with Secret memorandum dated October , 1951 ta IA. E. In accordawe with Secret rwmorandnn dated October , 1951 ta IA. E. Qapletad Uranium for HAA and ML," we are Ylepletad Uranium for HAA and ML," we are obligated to fill the following orders obligated to fill the following orders North American Aviation North American Aviation . . One Inch roes One Inch roes a. Depleted U nrptalj U-235 content= 0.&9 f O.O& Meterial must be homogenemsj uniformity of assay, O&Q5%. : b. Diemeterc 0.99P (1( O.ooOn, - 0.003")j de-hrmd. YI E ,g C* pwh b" f1/32" Classification Cancelled d. Humber of rods: 1800

15

RECIPIENT:Lake County, FL  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Lake County, FL Lake County, FL u.s. DEPARTIIIEN T OF ENERGY EERE PROJECT MANAGEMENT CEN T ER NEPA DETERlIJJNATION PROJECf TITLE: Lake County, FL EECBG SOW (S) Page lof2 STATE: FL Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Numbcr CID Numbtr OE·FOA-OOOOO13 DE·EE00Q0786.001 0 Based on my review of the information concerning the proposed adion, as NEPA Compliance Officer (authorized undtr DOE Order 451.IA), I have made the following determination: ex. EA, EIS APPENDIX AND NUMBER: Description: 65.1 Actions to conserve energy, demonstrate potential energy conserva tion, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical

16

DOE - Office of Legacy Management -- Gardinier Inc - FL 05  

Office of Legacy Management (LM)

Gardinier Inc - FL 05 Gardinier Inc - FL 05 FUSRAP Considered Sites Site: GARDINIER, INC. ( FL.05 ) Eliminated from consideration under FUSRAP - Referred to EPA and State of Florida Designated Name: Not Designated Alternate Name: U. S. Phosphoric Products FL.05-1 Location: Tampa , Florida FL.05-2 Evaluation Year: 1984 FL.05-3 Site Operations: U. S. Phosphoric Products constructed and operated a small scale pilot plant for uranium recovery; and Gardinier investigated a process for the recovery of by-product uranium from wet process phosphoric acid. FL.05-1 FL.05-6 FL.05-7 Site Disposition: Eliminated - No Authority FL.05-3 FL.05-8 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium FL.05-6 FL.05-7 Radiological Survey(s): Yes FL.05-2

17

DOE - Office of Legacy Management -- University of Florida - FL 09  

NLE Websites -- All DOE Office Websites (Extended Search)

Florida - FL 09 Florida - FL 09 FUSRAP Considered Sites Site: UNIVERSITY OF FLORIDA (FL.09) Eliminated from consideration under FUSRAP - Referred to NRC Designated Name: Not Designated Alternate Name: None Location: Gainesville , Florida FL.09-1 Evaluation Year: 1995 FL.09-1 Site Operations: Research and development using test quantities of radioactive metal. FL.09-2 Site Disposition: Eliminated - No Authority - NRC licensed FL.09-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Test Quantities of Uranium and Plutonium FL.09-2 Radiological Survey(s): None Indicated Site Status: Eliminated from consideration under FUSRAP - Referred to NRC FL.09-2 Also see Documents Related to UNIVERSITY OF FLORIDA FL.09-1 - DOE Letter; Wagoner to DeLaney; Subject: University of

18

DOE - Office of Legacy Management -- Humphreys Gold Co - FL 08  

Office of Legacy Management (LM)

Humphreys Gold Co - FL 08 Humphreys Gold Co - FL 08 FUSRAP Considered Sites Site: Humphreys Gold Co. (FL.08 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Jacksonville , Florida FL.08-1 Evaluation Year: 1987 FL.08-2 FL.08-3 Site Operations: Processed monazite ore in the 1950s. FL.08-3 Site Disposition: Eliminated - No Authority - No AEC involvement at the site FL.08-2 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Thorium FL.08-1 Radiological Survey(s): No Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to Humphreys Gold Co. FL.08-1 - AEC Memorandum; Edmonds to McCarvill; Subject: Monazite Dredging Operations and Placer Deposits Containing Thorium Minerals; June

19

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

Quarterly Sampling, STAR Center, Largo, FL Quarterly Sampling, STAR Center, Largo, FL 7030-226 Accutest Job Number: F27229 Sampling Date: 10/07/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable.

20

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

WWNA Monthly; Largo, FL WWNA Monthly; Largo, FL 110406202 Accutest Job Number: F25982 Sampling Date: 08/10/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

WWNA Monthly; Largo, FL WWNA Monthly; Largo, FL 7030-226 Accutest Job Number: F33038 Sampling Date: 07/06/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

22

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

WWNA Monthly; Largo, FL WWNA Monthly; Largo, FL 7031-226 Accutest Job Number: F36361 Sampling Date: 11/03/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

23

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

Quarterly Sampling, STAR Center, Largo, FL Quarterly Sampling, STAR Center, Largo, FL 110406202 Accutest Job Number: F33211 Sampling Dates: 07/13/05 - 07/14/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable.

24

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel:...

25

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

0/06 0/06 Technical Report for S M Stoller Quarterly Sampling, STAR Center, Largo, FL 110406202 Accutest Job Number: F39137 Sampling Dates: 03/08/06 - 03/09/06 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable.

26

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

2/04 2/04 Technical Report for S M Stoller Quarterly Sampling, STAR Center, Largo, FL 110406202 Accutest Job Number: F25409 Sampling Dates: 07/13/04 - 07/14/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable.

27

Properties of double-layered Ga-doped Al-zinc-oxide/titanium-doped indium-tin-oxide thin films prepared by dc magnetron sputtering applied for Si-based thin film solar cells  

Science Conference Proceedings (OSTI)

In this article, Ga-doped Al-zinc-oxide (GAZO)/titanium-doped indium-tin-oxide (ITIO) bi-layer films were deposited onto glass substrates by direct current (dc) magnetron sputtering. The bottom ITIO film, with a thickness of 200 nm, was sputtered onto the glass substrate. The ITIO film was post-annealed at 350 deg. C for 10-120 min as a seed layer. The effect of post-annealing conditions on the morphologies, electrical, and optical properties of ITIO films was investigated. A GAZO layer with a thickness of 1200 nm was continuously sputtered onto the ITIO bottom layer. The results show that the properties of the GAZO/ITIO films were strongly dependent on the post-annealed conditions. The spectral haze (T{sub diffuse}/T{sub total}) of the GAZO/ITIO bi-layer films increases upon increasing the post-annealing time. The haze and resistivity of the GAZO/ITIO bi-layer films were improved with the post-annealed process. After optimizing the deposition and annealing parameters, the GAZO/ITIO bi-layer film has an average transmittance of 83.20% at the 400-800 nm wavelengths, a maximum haze of 16%, and the lowest resistivity of 1.04 x 10{sup -3}{Omega} cm. Finally, the GAZO/ITIO bi-layer films, as a front electrode for silicon-based thin film solar cells, obtained a maximum efficiency of 7.10%. These encouraging experimental results have potential applications in GAZO/ITIO bi-layer film deposition by in-line sputtering without the wet-etching process and enable the production of highly efficient, low-cost thin film solar cells.

Wang, Chao-Chun; Wuu, Dong-Sing; Lin, Yang-Shih; Lien, Shui-Yang; Huang, Yung-Chuan; Liu, Chueh-Yang; Chen, Chia-Fu; Nautiyal, Asheesh; Lee, Shuo-Jen [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Department of Materials Science and Engineering, MingDao University, Changhua 52345, Taiwan (China); Department of Mechanical Engineering, Yuan Ze University, Taoyuan 320, Taiwan (China)

2011-11-15T23:59:59.000Z

28

City of Quincy, FL Smart Grid Project | Open Energy Information  

Open Energy Info (EERE)

FL Smart Grid Project FL Smart Grid Project Jump to: navigation, search Project Lead City of Quincy, FL Country United States Headquarters Location Quincy, Florida Recovery Act Funding $2,471,041.00 Total Project Value $4,942,082.00 Coverage Area Coverage Map: City of Quincy, FL Smart Grid Project Coordinates 30.5871392°, -84.5832453° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[]}

29

FUPWG Meeting Agenda - Cape Canaveral, FL | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Cape Canaveral, FL Cape Canaveral, FL FUPWG Meeting Agenda - Cape Canaveral, FL October 7, 2013 - 3:00pm Addthis FUPWG Spring 2007 - Cocoa Beach, FL: Launching a New Era of Energy Efficiency" Hosted by: Florida Power and Light Company logo FEMP logo May 1-2, 2007 Hosted by Florida Power and Light Company Monday, April 30, 2007 5:00 - 6:30 Steering Committee meeting at Skylab/Atlas Conference Room, Doubletree Hotel 6:30 until... Networking dinner at 3 Wishes Restaurant, Doubletree Hotel Tuesday, May 1, 2007 7:45 - 8:30 Registration/Continental Breakfast 8:30 - 8:45 Florida Power & Light Welcome Marlene Santos, FPL Vice President of Customer Service 8:45 - 9:00 FEMP Welcome David McAndrew, FEMP 9:00 - 9:30 Washington Update David McAndrew, FEMP National Defense 2007 Authorization

30

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

7170 7170 Sampling Date: 10/05/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D. Laboratory Director e-Hardcopy 2.0 Automated Report 12 1 of 12

31

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

227 227 Sampling Dates: 03/31/04 - 04/01/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D. Laboratory Director e-Hardcopy 2.0 Automated Report

32

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

124 124 Sampling Date: 01/06/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D. Laboratory Director e-Hardcopy 2.0 Automated Report 18 1 of 18

33

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

531 531 Sampling Date: 04/16/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D. Laboratory Director e-Hardcopy 2.0 Automated Report 21 1 of 21

34

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

8014 8014 Sampling Date: 11/09/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D. Laboratory Director e-Hardcopy 2.0 Automated Report 12 1 of 12

35

S M Stoller Monthly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

applicable: * Chain of Custody 16 of 18 4 -- ADDRESS ' Lx',, ' fL' -wt-q3 MiSy STATE ZIP PROJECT NO. CHAIN OF CUSTO ACCUTEST 4405 VINELAND ROAD l SUITE C-15 STANDARD 7 48 HOUR...

36

Ga Air Compressor, Ga Air Compressor Products, Ga Air ...  

U.S. Energy Information Administration (EIA)

Ga Air Compressor, You Can Buy Various High Quality Ga Air Compressor Products from Global Ga Air Compressor Suppliers and Ga Air Compressor ...

37

DOE - Office of Legacy Management -- Virginia-Carolina Chemical Corp - FL  

Office of Legacy Management (LM)

Virginia-Carolina Chemical Corp - Virginia-Carolina Chemical Corp - FL 06 FUSRAP Considered Sites Site: Virginia-Carolina Chemical Corp. (FL.06 ) Eliminated from consideration under FUSRAP - Referred to US EPA and State of Florida Designated Name: Not Designated Alternate Name: Conserv Corporation FL.06-1 Location: Nichols , Florida FL.06-2 Evaluation Year: 1985 FL.06-1 Site Operations: Process development studies and pilot plant testing of uranium recovery from phosphoric acid during the mid-1950s. Site Disposition: Eliminated - No Authority FL.06-1 FL.06-4 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium Radiological Survey(s): Yes FL.06-2 Site Status: Eliminated from consideration under FUSRAP - Referred to US EPA and State of Florida FL.06-1

38

DOE - Office of Legacy Management -- University of Miami - FL 0-01  

Office of Legacy Management (LM)

Miami - FL 0-01 Miami - FL 0-01 FUSRAP Considered Sites Site: UNIVERSITY OF MIAMI (FL.0-01 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Miami , Florida FL.0-01-1 Evaluation Year: 1987 FL.0-01-1 Site Operations: Research. FL.0-01-1 Site Disposition: Eliminated - Potential for contamination considered remote based on nature of the operations FL.0-01-1 Radioactive Materials Handled: None Indicated Primary Radioactive Materials Handled: None Indicated FL.0-01-1 Radiological Survey(s): No Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to UNIVERSITY OF MIAMI FL.0-01-1 - Aerospace Letter; Young to Wallo; Subject: Elimination Recommendation -- Colleges and Universities; September 23, 1987

39

Washington, DC'  

Office of Legacy Management (LM)

of. Energy of. Energy Washington, DC' 26585 , The Honorable Gene Eriquez .~ City Hall I55 Deer Hill Avenue + Danbury/Connecticut 06180 .. -r. - Dear Mayor Eriquez: Secretary of Energy Hazel O!Leary has .announced a knew approach -to openness in. the Department of Energy (DOE) and its communications with the public. In support of th,is initiative, we are,pleased to forward the enclosed information, related to the former Sperry Products,'.Inc. site in your jurisdiction ,that performed,work for DOE or its predecessor agencies. Th,is informatipn is provided,for your information, use, and retenti~oh. DOE's Formeily Utilized Sites Remedial Action Program is responsible for. identification of sites used by'DOE's predecessor agencies, determining their current radiological condition and,

40

Current Trends, DC, 3/24-28/03Progress towards Energy Supported by  

E-Print Network (OSTI)

Current Trends, DC, 3/24-28/03Progress towards Energy Supported by Columbia U Comp-X GA INEL JHU-term research plan #12;Current Trends, DC, 3/24-28/03Progress towards Energy Spherical Torus Offers High Trends, DC, 3/24-28/03Progress towards Energy NSTX Is to Prove Scientific Principle (PoP) of the Extended

Princeton Plasma Physics Laboratory

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

FUPWG Meeting Agenda - Destin, FL | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Destin, FL Destin, FL FUPWG Meeting Agenda - Destin, FL October 7, 2013 - 2:56pm Addthis Going coastal for energy efficiency. FUPWG. April 15-16, 2008, Destin, Florida Gulf Power: A Southern Company FEMP logo April 15-16, 2008 Hosted by Gulf Power Monday, April 14, 2008 6:30 pm Steering Committee Meeting & Networking Dinner Ocean Club 8955 US Highway 98 W Miramar Beach, FL 32550 Tuesday, April 15, 2008 7:45 - 8:30 am Registration and Continental Breakfast 8:30 - 8:45 am Gulf Power Welcome P. Bernard Jacob, Customer Operations Vice President 8:45 - 9:15 am FEMP Welcome David McAndrew, FEMP 9:15 - 10:00 am Washington Update David McAndrew, FEMP 10:00 - 10:30 am Technology Update Paul Kistler 10:30 - 11:00 am Networking Break & New Member Mentor Introductions 11:00 - 11:30 am Gulf Power Success Story - NAS Chiller Replacement

42

Radio frequency dc-dc power conversion  

E-Print Network (OSTI)

THIS THESIS addresses the development of system architectures and circuit topologies for dc-dc power conversion at very high frequencies. The systems architectures that are developed are structured to overcome limitations ...

Rivas, Juan, 1976-

2007-01-01T23:59:59.000Z

43

Building Scale DC Microgrids  

NLE Websites -- All DOE Office Websites (Extended Search)

Scale DC Microgrids Title Building Scale DC Microgrids Publication Type Conference Proceedings LBNL Report Number LBNL-5729E Year of Publication 2012 Authors Marnay, Chris, Steven...

44

TRIBAL ISSUES TOPIC GROUP MEETING SUMMARY JACKSONVILLE, FL  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

JACKSONVILLE, FL JACKSONVILLE, FL JANUARY 20, 1999 Mr. Kevin Blackwell (USDOT/FRA) updated the group on the status of the DOT response to DOE's inquiry about the tribal right to inspect rail shipments. The response was in the final stages of review in the General Counsel's office and is expected by July 1999. The Group has added a representative from the NRC General Counsel's office, as a topic group member, to help keep abreast of developments in the NRC's upcoming draft rulemaking regarding tribes and advanced notification. The group also discussed the research that has been conducted on the issue of developing a "umbrella grant" from DOE to states and tribes. Tribes concerns differ from State concerns because of disparities in available infrastructure to administer grants and funding equity issues.

45

S M Stoller STAR Center- 4.5 Acre Site, Largo, FL  

Office of Legacy Management (LM)

STAR Center- 4.5 Acre Site, Largo, FL STAR Center- 4.5 Acre Site, Largo, FL 110406202 Accutest Job Number: F23552 Sampling Date: 04/20/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

46

S M Stoller Star Center-B100 Monthly/Effluent; Largo, FL  

Office of Legacy Management (LM)

B100 Monthly/Effluent; Largo, FL B100 Monthly/Effluent; Largo, FL 7030-226 Accutest Job Number: F30882 Sampling Date: 04/06/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

47

S M Stoller Star Center-B100 Monthly/Effluent; Largo, FL  

Office of Legacy Management (LM)

B100 Monthly/Effluent; Largo, FL B100 Monthly/Effluent; Largo, FL 7030-226 Accutest Job Number: F29123 Sampling Date: 01/06/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

48

S M Stoller STAR Center- 4.5 Acre Site, Largo, FL  

Office of Legacy Management (LM)

STAR Center- 4.5 Acre Site, Largo, FL STAR Center- 4.5 Acre Site, Largo, FL 110406202 Accutest Job Number: F25243 Sampling Date: 07/06/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

49

S M Stoller STAR Center- 4.5 Acre Site, Largo, FL  

Office of Legacy Management (LM)

STAR Center- 4.5 Acre Site, Largo, FL STAR Center- 4.5 Acre Site, Largo, FL 7030-226/Monthly Accutest Job Number: F27168 Sampling Date: 10/05/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable.

50

S M Stoller Star Center-B100 Monthly/Effluent; Largo, FL  

Office of Legacy Management (LM)

B100 Monthly/Effluent; Largo, FL B100 Monthly/Effluent; Largo, FL 7031-226 Accutest Job Number: F35493 Sampling Date: 10/04/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

51

DC source assemblies  

SciTech Connect

Embodiments of DC source assemblies of power inverter systems of the type suitable for deployment in a vehicle having an electrically grounded chassis are provided. An embodiment of a DC source assembly comprises a housing, a DC source disposed within the housing, a first terminal, and a second terminal. The DC source also comprises a first capacitor having a first electrode electrically coupled to the housing, and a second electrode electrically coupled to the first terminal. The DC source assembly further comprises a second capacitor having a first electrode electrically coupled to the housing, and a second electrode electrically coupled to the second terminal.

Campbell, Jeremy B; Newson, Steve

2013-02-26T23:59:59.000Z

52

J25097-1 Fl_L2 Final Report  

Office of Legacy Management (LM)

5097-1 5097-1 Job Description: Star Center For: S.M. Stoller Corporation 2597 B 3/4 Road Grand Junction, CO 81503 Attention: Mr. Charles Tabor _____________________________________________ Nancy Robertson Project Manager II nancy.robertson@testamericainc.com 09/19/2008 Methods: FDEP, DOH Certification #: E84282, E81005, E81010 These test results meet all the requirements of NELAC unless specified in the case narrative. All questions regarding this test report should be directed to the TestAmerica Project Manager who signed this test report. The estimated uncertainty associated with these reported results is available upon request. The results contained in this test report relate only to these samples included herein. TestAmerica Laboratories, Inc. TestAmerica Tampa 6712 Benjamin Road, Suite 100, Tampa, FL 33634

53

25th AIAA Applied Aerodynamics Conference 25 -28 June 2007, Miami, FL AIAA 2007-4442  

E-Print Network (OSTI)

25th AIAA Applied Aerodynamics Conference 25 - 28 June 2007, Miami, FL AIAA 2007-4442 Copyright , Diego Saer3 and Ge-Cheng Zha4 University of Miami, Coral Gables, Florida 33124 A flying wing personal and Aerospace Engineering A #12;25th AIAA Applied Aerodynamics Conference 25 - 28 June 2007, Miami, FL AIAA 2007

Zha, Gecheng

54

Building Scale DC Microgrids  

E-Print Network (OSTI)

a 10 kW vertical axis wind turbine, and Fig. 4 shows one ofgrid Fig. 3. Vertical axis wind turbine in the AIT DC grid

Marnay, Chris

2013-01-01T23:59:59.000Z

55

AC-DC Difference  

Science Conference Proceedings (OSTI)

... The NIST ac-dc Difference Project provides US industry with the essential link between ac ... Facilities/Tools Used: ... NIST CNST Nanofabrication facility. ...

2012-08-09T23:59:59.000Z

56

Building Scale DC Microgrids  

E-Print Network (OSTI)

an increasingly familiar generation source and elec- tronicssource of ancillary services either to buffer local variable generation,sources, e.g. photovoltaic modules (PV), from other direct current (DC) generation,

Marnay, Chris

2013-01-01T23:59:59.000Z

57

Adaptive decentralised control of parallel DC-DC converter systems  

Science Conference Proceedings (OSTI)

In this paper, we develop a robust controller for parallel DC-DC converter system by combining the adaptive backstepping technique and decentralised control. The voltages and currents of all converters are coupled with each other. The parallel DC-DC ...

Jing Zhou

2012-08-01T23:59:59.000Z

58

RF Power Degradation of GaN High Electron Mobility Transistors  

E-Print Network (OSTI)

We have developed a versatile methodology to systematically investigate the RF reliability of GaN High-Electron Mobility Transistors. Our technique utilizes RF and DC figures of merit to diagnose the degradation of RF ...

Joh, Jungwoo

59

International Technical Conference on Coal Utilization & Fuel Systems Clearwater (FL), USA, March 4-7, 2002  

E-Print Network (OSTI)

27th International Technical Conference on Coal Utilization & Fuel Systems Clearwater (FL), USA is a legitimate demand for more base-load energy which can be covered only by additional nuclear power the USA, i.e. Los Alamos

Zevenhoven, Ron

60

S M Stoller Star Center-B100 Monthly/Effluent; Largo, FL  

Office of Legacy Management (LM)

* Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http:www.accutest.com Test results contained within this data package meet the requirements of the National...

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

GaAs photoconductive semiconductor switch  

DOE Patents (OSTI)

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

1998-01-01T23:59:59.000Z

62

Dc arc weld starter  

DOE Patents (OSTI)

A system for starting an arc for welding uses three DC power supplies, a high voltage supply for initiating the arc, an intermediate voltage supply for sustaining the arc, and a low voltage welding supply directly connected across the gap after the high voltage supply is disconnected.

Campiotti, R.H.; Hopwood, J.E.

1989-02-17T23:59:59.000Z

63

DC arc weld starter  

SciTech Connect

A system for starting an arc for welding uses three DC power supplies, a high voltage supply for initiating the arc, an intermediate voltage supply for sustaining the arc, and a low voltage welding supply directly connected across the gap after the high voltage supply is disconnected.

Campiotti, Richard H. (Tracy, CA); Hopwood, James E. (Oakley, CA)

1990-01-01T23:59:59.000Z

64

A dc transformer  

Science Conference Proceedings (OSTI)

Although conventional transformers are ac, a device that may be termed a dc transformer has been constructed by using superconductors. To provide an understanding of how such a transformer would operate, some of the properties of type I and type II superconductors ...

I. Giaever

1966-09-01T23:59:59.000Z

65

Electromagnetics - DC/Low Frequency  

Science Conference Proceedings (OSTI)

... GA [200403- 0] ID. Idaho National Laboratory -Calibration Services Dept., Idaho Falls, ID [200115- 0] IL. S. Himmelstein ...

2013-07-26T23:59:59.000Z

66

China Ga Air Compressor, China Ga Air Compressor Products ...  

U.S. Energy Information Administration (EIA)

China Ga Air Compressor, China Ga Air Compressor Suppliers and Manufacturers Directory - Source a Large Selection of Ga Air Compressor Products at ...

67

Washington. DC,20585  

Office of Legacy Management (LM)

Washington. DC,20585 Washington. DC,20585 MAY' i 1995 .- The Honorable Freeman R. Bosley, Jr. ' r City Hall 1200 Narket Street St. Louis, Missouri 63103 Dear Mayor Bosley: ,'~ ,. : !' Secretary of Energy Hazel O'Leary'has announced a new approach to'openness'in " the Department of,Energy"(DOE) and its communications with the pu~blic. In 'support of this initiative, we are pleased to forward the enclosed information rel,ated to the former Petrolite Corp. site in your jurisdiction that,performed, work for DDE or,i.ts predecessor agencies. your information, use, and retention. This information is provided for DDE's Formerly Utilized Sites Remedial Action Program is responsible for identification of sites used by DDE's predecessor agencies, determining their

68

I ' Washington, DC'  

Office of Legacy Management (LM)

' Washington, DC' ' Washington, DC' 20585 The.Honorable Don Trotter, 102' Public Square Clarksville, Tennessee '37040 '_ _' ' Dear Mayor Trotter: '. Secretary of Energy Hazel .O'Leary has announced a new the Department of Energy (DOE) and its communications support of this initiative, we are pleased to forward related to the Clarksville Foundry.& Machine Co. site approach to openness in with the publ,ic'. In " the~enclosed~information in your'jurisdiction that performed work for DOE or its predecessor'agencies. This information. is provided, for.your information, use, and retention. remedial action conservative' set of technical investigations to assure environment. If'you have any questions, please feel free~to call DrI W. Alexander Uilliams 301-427-1719 of my staff.

69

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

accomplishments accomplishments are impressive in themselves, and associ- ated with each milestone is the expansion of future produc- tion opportunities as another technical barrier is overcome. The extension of recovery opportunities into deep water has established the deep offshore as an area of considerable national significance. A second source of increased supply is gas from coalbed formations. Natural gas production from coalbed methane fields continued to grow in 1996 as projects initiated mainly in the early to mid 1990's matured through the dewatering phase into higher rates of gas production. Coalbed forma- tions contribute almost 1 trillion cubic feet, roughly 5 per- cent, to total U.S. production. Continued production growth from coalbeds is not likely in light of the precipitous drop in new wells completed in coalbed formations since the termination of the production tax

70

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Annual Energy Outlook 2012 (EIA)

857, "Monthly Report of Natural Gas Purchases and Deliveries to Consumers." 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 15. Average City Gate Price of Natural...

71

Auxiliary resonant DC tank converter  

SciTech Connect

An auxiliary resonant dc tank (ARDCT) converter is provided for achieving soft-switching in a power converter. An ARDCT circuit is coupled directly across a dc bus to the inverter to generate a resonant dc bus voltage, including upper and lower resonant capacitors connected in series as a resonant leg, first and second dc tank capacitors connected in series as a tank leg, and an auxiliary resonant circuit comprising a series combination of a resonant inductor and a pair of auxiliary switching devices. The ARDCT circuit further includes first clamping means for holding the resonant dc bus voltage to the dc tank voltage of the tank leg, and second clamping means for clamping the resonant dc bus voltage to zero during a resonant period. The ARDCT circuit resonantly brings the dc bus voltage to zero in order to provide a zero-voltage switching opportunity for the inverter, then quickly rebounds the dc bus voltage back to the dc tank voltage after the inverter changes state. The auxiliary switching devices are turned on and off under zero-current conditions. The ARDCT circuit only absorbs ripples of the inverter dc bus current, thus having less current stress. In addition, since the ARDCT circuit is coupled in parallel with the dc power supply and the inverter for merely assisting soft-switching of the inverter without participating in real dc power transmission and power conversion, malfunction and failure of the tank circuit will not affect the functional operation of the inverter; thus a highly reliable converter system is expected.

Peng, Fang Z. (Knoxville, TN)

2000-01-01T23:59:59.000Z

72

Low-voltage-swing Monolithic DC-DC Conversion  

E-Print Network (OSTI)

AbstractA low-voltage-swing MOSFET gate drive technique is proposed in this paper for enhancing the efficiency characteristics of high-frequency-switching dcdc converters. The parasitic power dissipation of a dcdc converter is reduced by lowering the voltage swing of the power transistor gate drivers. A comprehensive circuit model of the parasitic impedances of a monolithic buck converter is presented. Closed-form expressions for the total power dissipation of a low-swing buck converter are proposed. The effect of reducing the MOSFET gate voltage swings is explored with the proposed circuit model. A range of design parameters is evaluated, permitting the development of a design space for full integration of active and passive devices of a low-swing buck converter on the same die, for a target CMOS technology. The optimum gate voltage swing of a power MOSFET that maximizes efficiency is lower than a standard full voltage swing. An efficiency of 88 % at a switching frequency of 102 MHz is achieved for a voltage conversion from 1.8 to 0.9 V with a low-swing dcdc converter based on a 0.18- m CMOS technology. The power dissipation of a low-swing dcdc converter is reduced by 27.9 % as compared to a standard full-swing dcdc converter. Index TermsBuck converter, dcdc converters, enhanced efficiency, high frequency, low power, low swing, monolithic integration, on-chip voltage conversion, parameter optimization, parasitic impedances, power dissipation modeling, power supply, reduced energy dissipation, reduced voltage swing, switching voltage regulator. I.

Volkan Kursun; Siva G. Narendra; Vivek K. De; Eby G. Friedman

2004-01-01T23:59:59.000Z

73

Improved DC Gun Insulator  

SciTech Connect

Many user facilities such as synchrotron light sources and free electron lasers require accelerating structures that support electric fields of 10-100 MV/m, especially at the start of the accelerator chain where ceramic insulators are used for very high gradient DC guns. These insulators are difficult to manufacture, require long commissioning times, and have poor reliability, in part because energetic electrons bury themselves in the ceramic, creating a buildup of charge and causing eventual puncture. A novel ceramic manufacturing process is proposed. It will incorporate bulk resistivity in the region where it is needed to bleed off accumulated charge caused by highly energetic electrons. This process will be optimized to provide an appropriate gradient in bulk resistivity from the vacuum side to the air side of the HV standoff ceramic cylinder. A computer model will be used to determine the optimum cylinder dimensions and required resistivity gradient for an example RF gun application. A ceramic material example with resistivity gradient appropriate for use as a DC gun insulator will be fabricated by glazing using doping compounds and tested.

M.L. Neubauer, K.B. Beard, R. Sah, C. Hernandez-Garcia, G. Neil

2009-05-01T23:59:59.000Z

74

Departmentaf Energy Washington, DC  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Departmentaf Departmentaf Energy Washington, DC 20585 MAR 4 1998 MEMORANDUM FOR: James H. Chafin, AL Robert Fisher, CH Steven Hamel, OR William Daubenspeck, LL James Hanley, SAN Robert Southworth, RL Harold Dixon, SR \ Lisa Jarr, FETC"/"',,,-' ( ~ ( ) ( I C{ \'"~V FROM: Paul A. Gottlieb'<,. ~ ' \ Assistant General Counsel . for Technology Transfer / and Intellectual Property SUBJECT: U.S. Competitiveness Provision. Except for the cases discussed further below, attached is the U.S. Competitiveness provision which you should begin providing as our initial negotiating position to inventors/contractors requesting identified and, advance patent waivers. Of course, it is not· expected that every inventor/contractor will agree to the exact language in the provision, in which case modifications to the provision can be made. In those cases where substantial changes are contemplated,

75

Washington, DC,20585  

Office of Legacy Management (LM)

>/gGq ' >/gGq ' ,, ' .. Department of Edgy Washington, DC,20585 ,I ' , APR 0 4 1995 The Honorable Patrick Ungaro 26 S. Phelps Street Youngstown, Ohio 44503 .' Dear );layor.Ungaro: Secretary of'Energy Hazel O'Leary has announced a new approach to openness in the Oepartment of Energy (DOE) and its coannunications with the public. In support of this initiative, we are pleased to forward the,enclosed information related to the former Ajax-Hagnethermic C,orp. site in your jurisdiction that performed work for DOE's predecessoragencies. This information is~provided for your information, use, and retention. DOE's Formerly Utilized Sites Remedial Action Program is responsible for identificationof sites used by DOE's predecessor agencies, determining their current radiological condition and, where it has authority, performing-

76

D.C.  

NLE Websites -- All DOE Office Websites (Extended Search)

Future scientists advance to national Future scientists advance to national level April 3, 2012 Science Bowl winners represent NM in Washington, D.C. A team from Los Alamos bested 39 other teams from around New Mexico in the 10- hour New Mexico Regional Science Bowl, held recently at Albuquerque Academy. The team went on to represent New Mexico in the 22nd Annual Department of Energy (DOE) National Science Bowl. In addition to their travel expenses, the team also won $5,000 for their school. The team consists of students, Alexander Wang, Micha Ben-Naim, Scott Carlsten, Lorenzo Venneri and Kevin Gao, and Coach, Paolo Venneri. - 2 - Albuquerque Academy took second place and La Cueva High School in Albuquerque placed third in the "Jeopardy!"-style event. During the competition, students are asked

77

GY EERE PROJECT MANAGEMENT CENTER NEPA DETERMINATION RECIPIENT:County of Escambia. FL  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

, , ... ~. u.s. DEPAR n-IENT OF ENER GY EERE PROJECT MANAGEMENT CENTER NEPA DETERMINATION RECIPIENT:County of Escambia. FL PROJECT TITLE: Road Prison Geothermal Earth Coupled HVAC Upgrade Page 1 of2 STATE: FL Funding Opportunity Announcement Numbtr Procurement Instrument Number NEPA Control Number CID Number DE-FOA-OOOOO13 DE-EEOOOO764.oo1 0 Based on my review of the information concerning the proposed action. as NEPA Compliance Officer (authorized under DOE Order 451.IA), I have made the following determination; ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply

78

File:USDA-CE-Production-GIFmaps-FL.pdf | Open Energy Information  

Open Energy Info (EERE)

FL.pdf FL.pdf Jump to: navigation, search File File history File usage Florida Ethanol Plant Locations Size of this preview: 463 × 599 pixels. Other resolution: 464 × 600 pixels. Full resolution ‎(1,275 × 1,650 pixels, file size: 274 KB, MIME type: application/pdf) Description Florida Ethanol Plant Locations Sources United States Department of Agriculture Related Technologies Biomass, Biofuels, Ethanol Creation Date 2010-01-19 Extent State Countries United States UN Region Northern America States Florida External links http://www.nass.usda.gov/Charts_and_Maps/Ethanol_Plants/ File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 16:12, 27 December 2010 Thumbnail for version as of 16:12, 27 December 2010 1,275 × 1,650 (274 KB) MapBot (Talk | contribs) Automated bot upload

79

u.s. DEPARTMENT OF ENERGY EERE PROJECT MANAGEMENT CENTER NFPA DETElU.flNATION  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

DETElU.flNATION DETElU.flNATION RECIPIENT: lowa State University PROJE(.T TITLE: An Undergraduate Minor in Wind Energy Science, Engineering, and Policy Page 1 of2 STATE : IA Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number DE-FOA..()()()()()9() DE-EEOOO3549 GFO-l0-497 0 Based on my review orlhe inrormation concerning the proposed action, 85 NEPA Compliance Officer (authorized under DOE Order 451.IA), I have made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply and

80

Triple voltage dc-to-dc converter and method  

DOE Patents (OSTI)

A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

Su, Gui-Jia (Knoxville, TN)

2008-08-05T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

DC's Marble ceiling : urban height and its regulation in Washington, DC; Urban height and its regulation in Washington, DC.  

E-Print Network (OSTI)

??Washington, DC has a unique urban form that is the result of a century-old law. Through the narrow lens of DC's height limit, I survey (more)

Trueblood, Andrew Tyson

2009-01-01T23:59:59.000Z

82

Bi-Directional DC-DC Converter for PHEV Applications  

DOE Green Energy (OSTI)

Plug-In Hybrid Electric Vehicles (PHEV) require high power density energy storage system (ESS) for hybrid operation and high energy density ESS for Electric Vehicle (EV) mode range. However, ESS technologies to maximize power density and energy density simultaneously are not commercially feasible. The use of bi-directional DC-DC converter allows use of multiple energy storage, and the flexible DC-link voltages can enhance the system efficiency and reduce component sizing. This will improve fuel consumption, increase the EV mode range, reduce the total weight, reduce battery initial and life cycle cost, and provide flexibility in system design.

Abas Goodarzi

2011-01-31T23:59:59.000Z

83

Washington DC | OpenEI Community  

Open Energy Info (EERE)

Washington DC Home Linked Open Data Workshop in Washington, D.C. Description: A group organizing the LOD workshop in Washington, D.C. in fall 2012 A follow-up event to the...

84

Catalog of DC Appliances and Power Systems  

E-Print Network (OSTI)

Brushless DC permanent magnet motor EV electric vehicle Btubrushless DC permanent magnet motors [11]. We note that themotor 2 Same VSD = variable speed drive BDCPM = brushless DC permanent magnet

Garbesi, Karina

2012-01-01T23:59:59.000Z

85

8798_FL  

NLE Websites -- All DOE Office Websites (Extended Search)

the entire bay, the right one of the area around the Golden Gate. Image: Mike Barad (UC Davis) and Peter Schwartz (Berkeley Lab). RESEARCH NEWS 47 This section of the Annual...

86

Definition: DC Resistivity Survey (Schlumberger Array) | Open...  

Open Energy Info (EERE)

Schlumberger Array) Jump to: navigation, search Dictionary.png DC Resistivity Survey (Schlumberger Array) The Schlumberger array is a type of electrode configuration for a DC...

87

Catalog of DC Appliances and Power Systems  

E-Print Network (OSTI)

by end use and appliance type. 217. Functions embodied in appliances and DC technologies thatthat both the standard appliance and the DC-internal

Garbesi, Karina

2012-01-01T23:59:59.000Z

88

Figure 23. Average price of natural gas delivered to U.S. commercial...  

Annual Energy Outlook 2012 (EIA)

Natural and Supplemental Gas Supply and Disposition," and Form EIA-910, "Monthly Natural Gas Marketer Survey." IN OH TN WV VA KY MD PA NY VT NH MA CT ME RI DE DC NC SC GA FL NJ AL...

89

Microsoft Word - figure_22.doc  

Gasoline and Diesel Fuel Update (EIA)

Natural and Supplemental Gas Supply and Disposition," and Form EIA-910, "Monthly Natural Gas Marketer Survey." IN OH TN WV VA KY MD PA NY VT NH MA CT ME RI DE DC NC SC GA FL NJ AL...

90

Performance Study of K2CsSb Photocathode Inside a DC High Voltage Gun  

SciTech Connect

In the past decade, there has been considerable interest in the generation of tens of mA average current in a photoinjector. Until recently, GaAs:Cs cathodes and K{sub 2}CsSb cathodes have been tested successfully in DC and RF injectors respectively for this application. Our goal is to test the K{sub 2}CsSb photocathode inside a DC gun. Since the multialkali cathode is a compound with constant characteristics over its entire thickness, we anticipate that the lifetime issues seen in GaAs:Cs due to surface damage by ion bombardment would be minimized. Hence successful operation of the K{sub 2}CsSb cathode in a DC gun could lead to a relatively robust electron source capable of delivering ampere level currents. In order to test the performance of a K{sub 2}CsSb cathode in a DC gun, we have designed and built a load lock system that allows the fabrication of the cathode at Brookhaven National Lab (BNL) and its testing at Jefferson Lab (JLab). In this paper, we will present the performance of the K{sub 2}CsSb photocathode in the preparation chamber and in the DC gun.

McCarter J. L.; Rao T.; Smedley, J.; Grames, J.; Mammei, R.; Poelker, M.; Suleiman, R.

2011-09-01T23:59:59.000Z

91

Ba-Ga (Barium - Gallium)  

Science Conference Proceedings (OSTI)

Ba-Ga crystallographic data...Ba-Ga crystallographic data Phase Composition, wt% Ga Pearson symbol Space group (Ba) 0 cI 2 Im m Ba 10 Ga 4.8 cF 176 Fd m Ba 8 Ga 7 30.8 cP 60 P 2 1 3 BaGa 2 50.4 hP 3 P 6/ mmm BaGa 4 67 tI 10 I 4/ mmm (Ga) 100 hP 2 P 6 3 / mmc...

92

SPARSE APERTURE MASKING OBSERVATIONS OF THE FL Cha PRE-TRANSITIONAL DISK  

Science Conference Proceedings (OSTI)

We present deep Sparse Aperture Masking (SAM) observations obtained with the ESO Very Large Telescope of the pre-transitional disk object FL Cha (SpT = K8, d = 160 pc), the disk of which is known to have a wide optically thin gap separating optically thick inner and outer disk components. We find non-zero closure phases, indicating a significant flux asymmetry in the K{sub S} -band emission (e.g., a departure from a single point source detection). We also present radiative transfer modeling of the spectral energy distribution of the FL Cha system and find that the gap extends from 0.06{sup +0.05}{sub -0.01} AU to 8.3 {+-} 1.3 AU. We demonstrate that the non-zero closure phases can be explained almost equally well by starlight scattered off the inner edge of the outer disk or by a (sub)stellar companion. Single-epoch, single-wavelength SAM observations of transitional disks with large cavities that could become resolved should thus be interpreted with caution, taking the disk and its properties into consideration. In the context of a binary model, the signal is most consistent with a high-contrast ({Delta}K{sub S} {approx} 4.8 mag) source at a {approx}40 mas (6 AU) projected separation. However, the flux ratio and separation parameters remain highly degenerate and a much brighter source ({Delta}K{sub S} {approx} 1 mag) at 15 mas (2.4 AU) can also reproduce the signal. Second-epoch, multi-wavelength observations are needed to establish the nature of the SAM detection in FL Cha.

Cieza, Lucas A.; Mathews, Geoffrey S.; Kraus, Adam L. [Institute for Astronomy, University of Hawaii at Manoa, Honolulu, HI 96822 (United States); Lacour, Sylvestre [LESIA, CNRS/UMR-8109, Observatoire de Paris, UPMC, Universite Paris Diderot, 5 place Jules Janssen, F-92195, Meudon (France); Schreiber, Matthias R.; Canovas, Hector [Departamento de Fisica y Astronomia, Universidad de Valparaiso, Valparaiso (Chile); Casassus, Simon; Jordan, Andres; Menard, Francois [Millenium Nucleus 'Protoplanetary Disks in ALMA Early Science', Universidad de Chile, Casilla 36-D, Santiago (Chile); Perez, Sebastian [Departamento de Astronomia, Universidad de Chile, Camino del Observatorio 1515, Las Condes, Santiago (Chile); Tuthill, Peter [School of Physics, University of Sydney, NSW 2006 (Australia); Ireland, Michael J., E-mail: lcieza@ifa.hawaii.edu [Department of Physics and Astronomy, Macquarie University, NSW 2109 (Australia)

2013-01-01T23:59:59.000Z

93

Catalog of DC Appliances and Power Systems  

SciTech Connect

This document catalogs the characteristics of current and potential future DC products and power systems.

Garbesi, Karina; Vossos, Vagelis; Shen, Hongxia

2010-10-13T23:59:59.000Z

94

Light-weight DC to very high voltage DC converter  

DOE Patents (OSTI)

A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current.

Druce, Robert L. (Union City, CA); Kirbie, Hugh C. (Dublin, CA); Newton, Mark A. (Livermore, CA)

1998-01-01T23:59:59.000Z

95

Light-weight DC to very high voltage DC converter  

DOE Patents (OSTI)

A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current. 1 fig.

Druce, R.L.; Kirbie, H.C.; Newton, M.A.

1998-06-30T23:59:59.000Z

96

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

97

Convergence Analysis of DC Algorithm for DC programming with ...  

E-Print Network (OSTI)

programs to which it gave almost always global solutions and proved to be more robust ... In this paper, we consider DC programming with subanalytic data. .... open ball with the center x ? Rn and radius ? > 0 is denoted by B(x, ?); while the unit ... and C ? Rn is a nonempty convex set, we can equivalently transform it into a.

98

DC systems with transformerless converters  

Science Conference Proceedings (OSTI)

A technical and economic feasibility study of HVDC systems without converter transformers is presented. The presentation includes proposed solutions to the drawback related to the absence of galvanic separation between the ac and dc systems, if the converter transformers are eliminated. The results show that HVDC systems without converter transformers are both technically and economically feasible. The cost savings can be substantial.

Vithayathil, J.J.; Mittlestadt, W. [Bonneville Power Administration, Portland, OR (United States); Bjoerklund, P.E. [ABB Power Systems AB, Ludvika (Sweden)

1995-07-01T23:59:59.000Z

99

DC to DC power converters and methods of controlling the same  

DOE Patents (OSTI)

A power generation system configured to provide direct current (DC) power to a DC link is described. The system includes a first power generation unit configured to output DC power. The system also includes a first DC to DC converter comprising an input section and an output section. The output section of the first DC to DC converter is coupled in series with the first power generation unit. The first DC to DC converter is configured to process a first portion of the DC power output by the first power generation unit and to provide an unprocessed second portion of the DC power output of the first power generation unit to the output section.

Steigerwald, Robert Louis; Elasser, Ahmed; Sabate, Juan Antonio; Todorovic, Maja Harfman; Agamy, Mohammed

2012-12-11T23:59:59.000Z

100

Eliza Liu Leader Electronics Inc. 4FL, No.3, Lane 45, Pao Hsin Rd.  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Eliza Liu Eliza Liu Leader Electronics Inc. 4FL, No.3, Lane 45, Pao Hsin Rd. Hsin Tein, Taipei, (23 1) Taiwan, R.O.C Dear Ms. Liu: The attached notice advises you of the Department of Energy's (DOE) determination that certain products manufactured by Leader Electronics Inc. (L-E-I) do not comply with applicable energy conservation standards in the United States. The notice also advises you of your legal obligations. This determination stems from the certification reports filed by L-E-I pursuant to 10 C.F.R. § 430.62 (a)(4)(ix) regarding the performance of external power supplies manufactured by L-E-I. Violations of the applicable energy efficiency standards may be subject to civil penalties. Separate from this notice, DOE may issue a notice of civil penalty for such penalties as

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

J14252-1 FL Level 2 Rpt PQL Final Report.pdf  

Office of Legacy Management (LM)

660-14252-1 660-14252-1 Job Description: Pinellas Annual Sampling For: S.M. Stoller Corporation 2597 B 3/4 Road Grand Junction, CO 81503 Attention: Mr. Charles Tabor Nancy Robertson Project Manager II nrobertson@stl-inc.com 03/29/2007 Methods: FDEP, DOH Certification #: E84282 These test results meet all the requirements of NELAC unless specified in the case narrative. All questions regarding this test report should be directed to the STL Project Manager who signed this test report. The estimated uncertainty associated with these reported results is available upon request. Project Manager: Nancy Robertson STL Tampa 6712 Benjamin Road Suite 100, Tampa, FL 33634 Tel (813) 885-7427 Fax (813) 885-7049 www.stl-inc.com Severn Trent Laboratories, Inc. Page 1 of 37 Page 2 of 37

102

DOE Challenge Home Case Study, Manatee County Habitat for Humanity, Ellenton, FL, Affordable  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Manatee County Manatee County Habitat for Humanity Ellenton, FL BUILDING TECHNOLOGIES OFFICE DOE Challenge Home builders are in the top 1% of builders in the country meeting the extraordinary levels of excellence and quality specifi ed by the U.S. Department of Energy. Every DOE Challenge Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Then, even more advanced technologies are designed in for a home that goes above and beyond current code to give you the superior quality construction, HVAC, appliances, indoor air quality, safety, durability, comfort, and solar-ready components along with ultra-low or no utility bills. This provides homeowners with a quality home that will last for generations to come.

103

Power Conversion Efficiency of AlGaAs/GaAs Schottky Diode for Low-Power On-Chip Rectenna Device Application  

Science Conference Proceedings (OSTI)

A Schottky diode has been designed and fabricated on n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences of Schottky barrier height from theoretical value are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are well rectified by the fabricated Schottky diodes and stable DC output voltage is obtained. Power conversion efficiency up to 50% is obtained at 1 GHz with series connection between diode and load. The fabricated the n-AlGaAs/GaAs Schottky diode provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd [Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai (Malaysia); Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, 81310 Skudai Johor Malaysia (Malaysia); Osman, Mohd Nizam [Telekom Research and Development, TM Innovation Centre, 63000 Cyberjaya (Malaysia)

2011-05-25T23:59:59.000Z

104

Ga-Zr (Gallium - Zirconium)  

Science Conference Proceedings (OSTI)

Ga-Zr crystallographic data...Ga 5 Zr 3 44.0 oC 32 Cmcm Ga 3 Zr 2 47 oF 40 Fdd 2 βGaZr 56.7 ? ? αGaZr 56.7 tI 16 I 4 1 / amd Ga 4 Zr 5 62.1 hP 18 P 6 3 / mcm Ga 2 Zr 3 66 tP 10 P 4/ mbm Ga 3 Zr 5 68.6 hP 16 P 6 3 / mcm GaZr 2 72.4 tI 12 I 4/ mcm (βZr) ~94 to 100 cI 2 Im m (αZr) 99.4 to 100 hP 2 P 6 3 / mmc...

105

Catalog of DC Appliances and Power Systems  

NLE Websites -- All DOE Office Websites (Extended Search)

Catalog of DC Appliances and Power Systems Catalog of DC Appliances and Power Systems Title Catalog of DC Appliances and Power Systems Publication Type Report LBNL Report Number LBNL-5364E Year of Publication 2011 Authors Garbesi, Karina, Vagelis Vossos, and Hongxia Shen Document Number LBNL-5364E Date Published October Publisher Lawrence Berkeley National Laboratory Abstract This document catalogs the characteristics of current and potential future direct current (DC) products and power systems. It is part of a larger U.S. Department of Energy-funded project, "Direct-DC Power Systems for Energy Efficiency and Renewable Energy Integration with a Residential and Small Commercial Focus". That project is investigating the energy-savings potential, benefits, and barriers of using DC generated by on-site renewable energy systems directly in its DC form, rather than converting it first to alternating current (AC) for distribution to loads. Two related reports resulted from this work: this Catalog and a companion report that addresses direct-DC energy savings in U.S. residential buildings.Interest in 'direct-DC' is motivated by a combination of factors: the very rapid increase in residential and commercial photovoltaic (PV) power systems in the United States; the rapid expansion in the current and expected future use of energy efficient products that utilize DC power internally; the demonstrated energy savings of direct-DC in commercial data centers; and the current emergence of direct-DC power standards and products designed for grid-connected residential and commercial products. Based on an in-depth study of DC appliances and power systems, we assessed off-grid markets for DC appliances, the DC compatibility of mainstream electricity end-uses, and the emerging mainstream market for direct-DC appliances and power systems.

106

FL44CH17-Chang ARI 18 October 2011 18:22 Nanoscale Electrokinetics  

E-Print Network (OSTI)

, depletion front, rectification Abstract When a direct current (DC) electric field is applied across an ion and Microvortices: How Microhydrodynamics Affects Nanofluidic Ion Flux Hsueh-Chia Chang,1 Gilad Yossifon,2 0066-4189/12/0115-0401$20.00 Keywords overlimiting current, nanoslot ion current, extended polarization

Chang, Hsueh-Chia

107

Ecological benefits of dc power transmission  

Science Conference Proceedings (OSTI)

The environmental effects of dc overhead transmission lines are examined. The major effects of ac and dc transmission lines are compared. Dc lines have advantages compared to ac lines in terms of electrical safety for people under the lines, biological effects, corona losses, and clearance width.

Kutuzova, N. B. [JSC 'NIIPT' (Russian Federation)

2011-05-15T23:59:59.000Z

108

NIF-0607-13692.ppt NIF Town Hall Meeting, June 16, 2007 1 Title page -APS, Orlando, FL, November 13,  

E-Print Network (OSTI)

NIF-0607-13692.ppt NIF Town Hall Meeting, June 16, 2007 1 Title page - APS, Orlando, FL, November, December 4, 2007, Edward I. Moses, NIC Director #12;NIF-0607-13692.ppt NIF Town Hall Meeting, June 16, 2007 on the Cosmos Limitless Clean Energy Eye on the Cosmos #12;NIF-0607-13692.ppt NIF Town Hall Meeting, June 16

109

A high-voltage low-power DC-DC buck regulator for automotive applications  

Science Conference Proceedings (OSTI)

This work presents a High-Voltage Low-Power CMOS DC-DC buck regulator for automotive applications. The overall system, including the high and low voltage analog devices, the power MOS and the low voltage digital devices, was realized in the Austriamicrosystems ... Keywords: DC-DC regulator, buck converter, current control, low quiscent current, pulse frequency modulation

G. Pasetti; L. Fanucci; R. Serventi

2010-03-01T23:59:59.000Z

110

DC picogrids: a case for local energy storage for uninterrupted power to DC appliances  

Science Conference Proceedings (OSTI)

An increasing number of appliances now operate on DC and providing uninterrupted power supply (UPS) to them through outages requires two conversions: first from an energy store, typically a DC battery, to AC mains and then from AC mains to the DC input ... Keywords: DC picogrid, conversion losses, power source identification

Sunil Kumar Ghai, Zainul Charbiwala, Swarnalatha Mylavarapu, Deva P. Seetharamakrishnan, Rajesh Kunnath

2013-01-01T23:59:59.000Z

111

Multiport DC/DC Converter for Stand-alone Photovoltaic Lighting System with Battery Storage  

Science Conference Proceedings (OSTI)

Photovoltaic energy has nowadays an increased importance in electrical power applications. However, the output power provided via the photovoltaic conversion process depends on solar irradiation and temperature. Therefore a multiple-input DC/DC converter ... Keywords: Multiport DC/DC Converter, photovoltaic (PV), battery, charge/discharge

Shengyong Liu; Xing Zhang; Haibin Guo; Jun Xie

2010-06-01T23:59:59.000Z

112

AlGaN/GaN-based power semiconductor switches  

E-Print Network (OSTI)

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

113

EA-327-A DC Energy, LLC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7-A DC Energy, LLC EA-327-A DC Energy, LLC Order authorizing DC Energy to export electric energy to Canada. EA-327-A DC Energy.pdf More Documents & Publications Application to...

114

EA-377 DC Energy Texas LLC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

EA-377 DC Energy Texas LLC EA-377 DC Energy Texas LLC Order authorizing DC Energy Texas LLC to export electric energy to Mexico. EA-377 DC Energy Texas LLC More Documents &...

115

EA-351 DC Energy Dakota, LLC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

51 DC Energy Dakota, LLC EA-351 DC Energy Dakota, LLC Order authorizing DC Energy Dakota, LLC to export electric energy to Canada EA-351 DC Energy Dakota, LLC More Documents &...

116

Phase-Shifted Full Bridge DC-DC Converter with Energy Recovery Clamp and Reduced Circulating Current  

E-Print Network (OSTI)

Phase-Shifted Full Bridge DC-DC Converter with Energy Recovery Clamp and Reduced Circulating an improved PSFB DC-DC converter using only a modified energy recovery clamp circuit attached at the secondary and/or output voltage changes. Section II describes the PSFB DC-DC circuit with the proposed energy

117

NOT SPECIFIED IOTHER AMINDMENT 01' SOUCITAnONIMOD1FlCAnON OF CONTRACT I  

NLE Websites -- All DOE Office Websites (Extended Search)

SPECIFIED IOTHER SPECIFIED IOTHER AMINDMENT 01' SOUCITAnONIMOD1FlCAnON OF CONTRACT I I COH'IRACT ID COOl! I PAGE OF PAGU 1 1 2 2. AIIPDMENTlMOOIRCAlION NO. ~. EFFECTIVE DATI! 4 R£QUISmoNIPURCHASE REa. NO. IS.PR04CTNO.tII~' 068 See Block 16C 09SCOOl502 .~ .. , ClOIHI 00518 '.110 BY (I1G111Or """ Qfftt e) cooa 100518 Oak Ridge Oak Ridge U.S. Department of Energy U.S. Department of Energy P.O. Box 2001 P.O. Box 2001 oak Ridge TN 37831 Oak Ridge TN 37831 * IWIIi AHD ADQIWi5 OF COHrRACrn)RINO. _~ ao.IIPCOIIU ~ IIA. ANlHaawn OF ICUClTA'hOH HO. o AX RIDGE ASSOCIATED UNIVERSITIES, INC. P.O. BOX 117 II.DA1m(SEEne.u H, AX RIDGE TN 37830-6218 o " 1M. ~!!.CA~ OF COH1RACfIOAIlERHO. DE-ACOS-060R23100 lOB. DATED (Ull "

118

Comparison of Chloroflexus aurantiacus strain J-10-fl proteomes of cells grown chemoheterotrophically and photoheterotrophically  

SciTech Connect

Chloroflexus aurantiacus J-10-fl is a thermophilic green bacterium, a filamentous anoxygenic phototroph, and the model organism of the phylum Chloroflexi. We applied high-throughput, liquid chromatography-mass spectrometry in a global quantitative proteomics investigation of C. aurantiacus cells grown under oxic (chemoorganoheterotrophically) and anoxic (photoorganoheterotrophically) redox states. Our global analysis identified 13,524 high-confidence peptides that matched to 1,286 annotated proteins, 242 of which were either uniquely identified or significantly increased in abundance under anoxic culture conditions. Fifty-three of the 242 proteins are previously characterized photosynthesis-related proteins, including chlorosome proteins, proteins involved in the bacteriochlorophyll biosynthesis, 3-hydroxypropionate (3-OHP) CO2 fixation pathway, and components of electron transport chains. The remaining 190 proteins have not previously been reported. Of these, five proteins were found to be encoded by genes from a novel operon and observed only in photoheterotrophically grown cells. These proteins candidates may prove useful in further deciphering the phototrophic physiology of C. aurantiacus and other filamentous anoxygenic phototrophs.

Cao, Li; Bryant, Donald A.; Schepmoes, Athena A.; Vogl, Kajetan; Smith, Richard D.; Lipton, Mary S.; Callister, Stephen J.

2012-01-17T23:59:59.000Z

119

DC Distribution: The Power To Change Buildings  

NLE Websites -- All DOE Office Websites (Extended Search)

DC Distribution: The Power To Change Buildings DC Distribution: The Power To Change Buildings Speaker(s): Brian Patterson Dennis Symanski Liang Downey Date: July 14, 2011 - 12:00pm Location: 90-3122 Seminar Host/Point of Contact: Chris Marnay This seminar presents an overview of the effort to create new applications standards to drive the distribution and use of native direct current (dc) in net zero energy commercial and residential buildings. From the early days of electric power generation, distribution and use there's been a debate over which form of power, AC or DC, is best. Edison set the stage for this argument in the late 1800's with his invention of DC powered lighting systems. Tesla's system of AC dynamos, transformers and motors all but stopped the growing use of DC by the turn of the century. With the

120

Map Locating Berkeley Lab Washington, DC Office  

NLE Websites -- All DOE Office Websites (Extended Search)

WASHINGTON, DC PROJECTS OFFICE WASHINGTON, DC PROJECTS OFFICE Map LEGEND: A:Berkeley Lab DC Office; PNNL; NREL; ORNL | B: EPA Waterside Mall C: Metrorail Station: Smithsonian | D: Metrorail Station: L'Enfant Plaza Notice: Due to security requirements in the building, all visitors to the Berkeley Lab DC Projects Office must check in at the ground floor entrance. If you do not have a DOE access badge, you will need to obtain a building visitor badge. To expedite this process, visitors are encouraged to RSVP to their meeting host or call (202) 488-2250 ahead of time. Metal detectors and x-ray screening of personal items are required for all visitors and staff entering the building. Directions to the Lab's Washington, DC Projects Office 901 D Street, SW Suite 950 Washington, DC 20024 Phone/Fax: (202) 488-2250

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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121

US. DEPARTMENT OF ENERGY EE RE PROJ ECT MANAGEMENT CENTER NEPA DE'l'flU..nNATION  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

!. !. US. DEPARTMENT OF ENERGY EE RE PROJ ECT MANAGEMENT CENTER NEPA DE'l'flU..nNATION Page 1 of2 RECIPIENT:Pineitas County Board of County Commissioners STATE: Fl PROJEc.T TITLE: Clearwater Campus District Cooling - Activity 3 Geothermal Test Bores Funding Opportunity Announ~ement Number DE-FOA-OOOOO13-000002 Procurement Instrument Number DE -EEOOOO795.003 NEPA Control Number GF0-0000795-003 cm Number G0795 Based on my review of the information ~oncerning the propos~ action, as NE PA Compliance Officer (authorized under DOE Order 451.IA), I have made t he following determination: ex, EA, [IS APPENDIX AND NUMBER: Description: 8 3. 1 Site characterizatio n .n. en vironmental monit oring A9 Information gathering, analysis, and

122

Active dc filter for HVDC systems  

SciTech Connect

This article is a case history of the installation of active dc filters for high-performance, low-cost harmonics filtering at the Lindome converter station in the Konti-Skan 2 HVDC transmission link between Denmark and Sweden. The topics of the article include harmonics, interference, and filters, Lindome active dc filter, active dc filter design, digital signal processor, control scheme, protection and fault monitoring, and future applications.

Zhang, W. (Royal Inst. of Tech., Stockholm (Sweden)); Asplund, G.

1994-01-01T23:59:59.000Z

123

Polarity inversion of N-face GaN using an aluminum oxide interlayer  

Science Conference Proceedings (OSTI)

The polarity of GaN grown by plasma-assisted molecular beam epitaxy was inverted from N-face to Ga-face by inserting a composite AlN/aluminum oxide (AlO{sub x}) interlayer structure at the inversion interface. The change in polarity was verified in situ by reflection high energy electron diffraction via intensity transients and postgrowth surface reconstructions, and ex situ by convergent beam electron diffraction and etch studies in an aqueous potassium hydroxide solution. The inverted materials showed smooth surfaces and good electrical properties. AlGaN/GaN high electron mobility transistors fabricated on the inverted epilayers showed good dc and high frequency performance. A current-gain cutoff frequency (f{sub T}) of 21 GHz and maximum oscillation frequency (f{sub max}) of 61 GHz were measured in devices with a gate length of 0.7 {mu}m. These data compare favorably to those of Ga-face AlGaN/GaN devices with a similar structure grown on Si-face SiC substrates.

Wong, Man Hoi; Mishra, Umesh K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 (United States); Wu, Feng; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

2010-12-15T23:59:59.000Z

124

AOCS Official Method Dc 1-59  

Science Conference Proceedings (OSTI)

Sampling and Preparation of Laboratory Sample AOCS Official Method Dc 1-59 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads AOCS DEFINITION Not applica

125

Catalog of DC Appliances and Power Systems  

E-Print Network (OSTI)

Savings in the Residential and Commercial Sectors with High- Efficiency Electric Motors,savings of 30% from switching to the use of variable speed brushless DC motors. Electric

Garbesi, Karina

2012-01-01T23:59:59.000Z

126

Polarization-engineered GaN/InGaN/GaN tunnel diodes  

E-Print Network (OSTI)

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

2010-08-24T23:59:59.000Z

127

High efficiency resonant dc/dc converter for solar power applications  

E-Print Network (OSTI)

This thesis presents a new topology for a high efficiency dc/dc resonant power converter that utilizes a resistance compression network to provide simultaneous zero voltage switching and near zero current switching across ...

Inam, Wardah

2013-01-01T23:59:59.000Z

128

Radio frequency dc-dc converters : device characterization, topology evaluation, and design  

E-Print Network (OSTI)

High frequency power conversion is attractive for the opportunities it affords for improved performance. Dc-dc converters operating at high frequencies use smaller-valued energy storage elements, which tend to be physically ...

Leitermann, Olivia

2008-01-01T23:59:59.000Z

129

Design and evaluation of a very high frequency dc/dc converter  

E-Print Network (OSTI)

This thesis presents a resonant boost topology suitable for very high frequency (VHF, 30-300 MHz) dc-dc power conversion. The proposed design is a fixed frequency, fixed duty ratio resonant converter featuring low device ...

Pilawa-Podgurski, Robert C. N

2007-01-01T23:59:59.000Z

130

Design and characterization of a radio-frequency dc/dc power converter  

E-Print Network (OSTI)

The use of radio-frequency (RF) amplifier topologies in dc/dc power converters allows the operating frequency to be increased by more than two orders of magnitude over the frequency of conventional converters. This enables ...

Jackson, David A. (David Alexander)

2005-01-01T23:59:59.000Z

131

GaN High Power Devices  

SciTech Connect

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

132

Washington, DC~ZO585  

Office of Legacy Management (LM)

jpfl.3%2' jpfl.3%2' ) .,Departhent of Eikrgj! : Washington, DC~ZO585 .-, , , Lf; I: ~.1,' .Yj4 , The Honorable Louis Barlup 55 ,E. Main Street Waynesboro;,Pennsy,lvania 17268 '~ Dear Mayor Barl,up:' Secretary of Energy Hazel O'Leary has'announced' a new approach to openness,in the Department of Energy-(DOE) and its communications with the public. In support-of this initiative, we are pleased.to forward the enclosed information related to the former Landis Machine Tool Co. site in your jurisdiction that performed work for DOE or its predecessor agencies. This information:is provided for your information< use, and retention. DOE's Formerly Utilized Sites Remedial Action Program is responsible for identification of sites used by DOE's predecessor agencies, determining their

133

High voltage DC power supply  

DOE Patents (OSTI)

A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively. 7 figs.

Droege, T.F.

1989-12-19T23:59:59.000Z

134

DOE - Office of Legacy Management -- Naval Research Laboratory - DC 02  

Office of Legacy Management (LM)

Research Laboratory - DC 02 Research Laboratory - DC 02 FUSRAP Considered Sites Site: NAVAL RESEARCH LABORATORY (DC.02 ) Eliminated from consideration under FUSRAP - Referred to DOD Designated Name: Not Designated Alternate Name: None Location: Washington , D.C. DC.02-4 Evaluation Year: 1987 DC.02-4 Site Operations: Research and development on thermal diffusion. DC.02-4 Site Disposition: Eliminated - No Authority - AEC licensed - Military facility DC.02-4 DC.02-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium, Thorium DC.02-2 DC.02-3 Radiological Survey(s): None Indicated Site Status: Eliminated from consideration under FUSRAP - Referred to DOD DC.02-4 Also see Documents Related to NAVAL RESEARCH LABORATORY DC.02-1 - AEC Memorandum and Source Material License No. C-3393;

135

Washington, DC | Building Energy Codes Program  

NLE Websites -- All DOE Office Websites (Extended Search)

Washington, DC Washington, DC Last updated on 2013-08-02 Current News In December, the DC CCCB voted 7-1 to adopt the 2012 IECC. The code will now enter administrative review and legislative process with likely adoption in the second half of 2013. Commercial Residential Code Change Current Code ASHRAE Standard 90.1-2007 with Amendments Amendments / Additional State Code Information Based on 2008 DC Construction Code with several amendments. State Specific Research Impacts of ASHRAE 90.1-2007 for Commercial Buildings in the District of Columbia (BECP Report, Sept. 2009) Approximate Energy Efficiency Equivalent to ASHRAE 90.1-2007 Effective Date 12/26/2009 Adoption Date 12/26/2008 Code Enforcement Mandatory DOE Determination ASHRAE 90.1-2007: Yes ASHRAE 90.1-2010: No DC DOE Determination Letter, May 31, 2013

136

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

137

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

138

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name GA-SNC Solar Place Nevada Sector Solar Product Nevada-based PV project developer and joint venture of GA-Solar North America and...

139

State Energy Program Assurances - Washington D.C. Mayor Fenty...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

State Energy Program Assurances - Washington D.C. Mayor Fenty State Energy Program Assurances - Washington D.C. Mayor Fenty Letter from Washington D.C. Mayor Fenty providing...

140

EA-377 DC Energy Texas | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7 DC Energy Texas EA-377 DC Energy Texas Order authorizing DC Energy Texas to export electric energy to Mexico. EA-377 DCE Texas Order.pdf More Documents & Publications Application...

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

EA-377 DC Energy Texas | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

EA-377 DC Energy Texas EA-377 DC Energy Texas Order authorizing DC Energy Texas to export electric energy to Mexico. EA-377 DCE Texas Order.pdf More Documents & Publications...

142

E&nr Ph. S. W.. Wahhgt~n. D.C. 200242174, TIkpbnc (202) 48a60uo  

Office of Legacy Management (LM)

75' 75' 00.955 L' E&nr Ph. S. W.. Wahhgt~n. D.C. 200242174, TIkpbnc (202) 48a60uo 7117-03.87.cdy.43 23 September 1987 CR CA.d M r. Andrew Wallo, III, NE-23 Division of Facility & Site Decoaunissioning Projects U.S. Department of Energy Germantown, Maryland 20545 Dear M r. Wallo: ELIMINATION RECOMMENDATION -- COLLEGES AND UNIVERSITIES M /4.0-03 kl 77.0% I - The attached elimination reconunendation was prepared in accordance rlL.0~ with your suggestion during our meeting on 22 September. The recommendation flO.o-02 includes 26 colleges and universities identified.in Enclosure 4 to Aerospace letter subject: Status of Actions - FUSRAP Site List, dated N0.03. 27 May 1987; three institutions (Tufts College, University of Virginia, rJCDCJ/ and the University of Washington) currently identified on the FUSRAP

143

National Petroleum Council Washington, DC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

National Petroleum Council Washington, DC National Petroleum Council Washington, DC Remarks by Secretary of Energy Spencer Abraham on the national energy plan. National Petroleum...

144

January 6, 2004 ORNL/TM-2003/286 Retrofit Best Practices Guide  

E-Print Network (OSTI)

. Bakersfield, CA. Chicago, IL. Atlanta, GA. Washington, DC Fort Worth, TX. Minneapolis, MN Miami, FL. air Phoenix and Bakersfield Dallas and Miami Boulder, Chicago, and Minneapolis Seattle, Atlanta, Washington DC a house "work"? 1 Inspecting your house 2 Moisture 4 Walls 4 Windows 4 Step 2: Your Options 5 Replacement

Oak Ridge National Laboratory

145

News From the D.C. Office  

NLE Websites -- All DOE Office Websites (Extended Search)

3 Aerial view of Washington D.C. 3 Aerial view of Washington D.C. News From the D.C. Office The federal government is the largest single purchaser in the world for many energy-related products. Federal buying power-along with that of state and local agencies-represents a largely untapped resource to increase the energy efficiency of consumer products and commercial equipment. LBL is helping the DOE Federal Energy Management Program (FEMP) develop and lead a government-wide initiative to capture this market-transforming opportunity. Jeff Harris and others in LBL's D.C. office are heading FEMP's efforts to identify how future federal purchases can be more energy-efficient. The U.S. government spends more than $70 billion a year to purchase supplies and equipment, of which an estimated $10-20 billion are energy-

146

D.C. | OpenEI Community  

Open Energy Info (EERE)

94 94 Varnish cache server Home Groups Community Central Green Button Applications Developer Utility Rate FRED: FRee Energy Database More Public Groups Private Groups Features Groups Blog posts Content Stream Documents Discussions Polls Q & A Events Notices My stuff Energy blogs 429 Throttled (bot load) Error 429 Throttled (bot load) Throttled (bot load) Guru Meditation: XID: 2142234494 Varnish cache server D.C. Home Kyoung's picture Submitted by Kyoung(155) Contributor 6 September, 2012 - 08:51 GRR Update Meeting scheduled for 9/13 in D.C. D.C. GRR meeting update The next Geothermal Regulatory Roadmap update meeting will be held in Washington, D.C. on Thursday, September 13 from 2-4 p.m. Syndicate content 429 Throttled (bot load) Error 429 Throttled (bot load) Throttled (bot load) Guru Meditation:

147

AOCS Official Method Dc 3b-59  

Science Conference Proceedings (OSTI)

Alcohol-Insoluble Matter AOCS Official Method Dc 3b-59 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION The residue from the alcohol-soluble determination (AOCS O

148

AOCS Official Method Dc 5-59  

Science Conference Proceedings (OSTI)

Combined Alcohols AOCS Official Method Dc 5-59 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION This method determines total fatty alcohols and permits estimation

149

AOCS Official Method Dc 6-59  

Science Conference Proceedings (OSTI)

Alkalinity AOCS Official Method Dc 6-59 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION This method determines the alkalinity or acidity of fatty alkyl sulfates.

150

AOCS Official Method Dc 7-59  

Science Conference Proceedings (OSTI)

Sodium Sulfate AOCS Official Method Dc 7-59 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION This method determines the sodium sulfate in fatty alkyl sulfates by

151

AOCS Official Method Dc 3a-59  

Science Conference Proceedings (OSTI)

Alcohol-Soluble Matter AOCS Official Method Dc 3a-59 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION This method determines the total alcohol-soluble matter in a

152

AOCS Official Method Dc 8-59  

Science Conference Proceedings (OSTI)

Unsulfated Material AOCS Official Method Dc 8-59 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION This method determines unsulfated fatty alcohols in fatty alkyl

153

AOCS Official Method Dc 4-59  

Science Conference Proceedings (OSTI)

Ester Sulfites AOCS Official Method Dc 4-59 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION The determination of ester SO 3 is dependent upon the hydro

154

Catalog of DC Appliances and Power Systems  

E-Print Network (OSTI)

produce a DC-compatible dishwasher that uses 51% less energyCooking Equipments Dishwashers Lighting Electric Other Waterby end-Use ( TWh) Dishwashers DVDs/VCRs DVDs/VCRs Freezers

Garbesi, Karina

2012-01-01T23:59:59.000Z

155

AOCS Official Method Dc 2-59  

Science Conference Proceedings (OSTI)

Moisture by Distillation Method AOCS Official Method Dc 2-59 Methods Methods and Analyses Analytical Chemistry Methods Downloads Methods Downloads DEFINITION This method determines moisture by distillation with

156

Recovery Act State Memos Washington, DC  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Washington, DC Washington, DC For questions about DOE's Recovery Act activities, please contact the DOE Recovery Act Clearinghouse: 1-888-DOE-RCVY (888-363-7289), Monday through Friday, 9 a.m. to 7 p.m. Eastern Time https://recoveryclearinghouse.energy.gov/contactUs.htm. All numbers and projects listed as of June 1, 2010 TABLE OF CONTENTS RECOVERY ACT SNAPSHOT................................................................................... 1 FUNDING ALLOCATION TABLE.............................................................................. 2 ENERGY EFFICIENCY ............................................................................................... 3 RENEWABLE ENERGY ............................................................................................. 5

157

Development and Demonstration of DC Photovoltaic Applications  

Science Conference Proceedings (OSTI)

This report documents a field demonstration performed at Bowling Green State University (BGSU) as part of an Electric Power Research Institute (EPRI) research project on improving the economics of photovoltaic (PV) power generation with innovative direct current (dc) applications. Unlike conventional dc uses for PV energy, this project aimed to demonstrate the powering of specific loads in grid-connected buildings without interference to the ac distribution system or other building loads.

2009-10-28T23:59:59.000Z

158

Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN  

DOE Green Energy (OSTI)

Etch rates up to 7,000 {angstrom}/min. for GaN are obtained in Cl{sub 2}/H{sub 2}/Ar or BCl{sub 3}/Ar ECR discharges at 1--3mTorr and moderate dc biases. Typical rates with HI/H{sub 2} are about a factor of three lower under the same conditions, while CH{sub 4}/H{sub 2} produces maximum rates of only {approximately}2,000 {angstrom}/min. The role of additives such as SF{sub 6}, N{sub 2}, H{sub 2} or Ar to the basic chlorine, bromine, iodine or methane-hydrogen plasma chemistries are discussed. Their effect can be either chemical (in forming volatile products with N) or physical (in breaking bonds or enhancing desorption of the etch products). The nitrides differ from conventional III-V`s in that bond-breaking to allow formation of the etch products is a critical factor. Threshold ion energies for the onset of etching of GaN, InGaN and InAlN are {ge} 75 eV.

Pearton, S.J.; Vartuli, C.B.; Lee, J.W.; Donovan, S.M.; MacKenzie, J.D.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States); Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States); McLane, G.F. [Army Research Lab., Fort Monmouth, NJ (United States); Ren, F. [AT and T Bell Labs., Murray Hill, NJ (United States)

1996-04-01T23:59:59.000Z

159

Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures  

Science Conference Proceedings (OSTI)

The atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures were studied. It was shown that the deposition of GaAs of the same nominal thickness leads to the formation of pseudomorphic GaAs/GaP quantum wells (QW), fully relaxed GaAs/GaP self-assembled quantum dots (SAQDs), or pseudomorphic GaAsP/GaP SAQDs depending on the growth temperature. We demonstrate that the atomic structure of Ga(As,P)/GaP heterostructures is ruled by the temperature dependence of adatom diffusion rate and GaAs-GaP intermixing. The band alignment of pseudomorphic GaAs/GaP QW and GaAsP/GaP SAQDs is shown to be of type II, in contrast to that of fully relaxed GaAs/GaP SAQDs, which have the band alignment of type I with the lowest electronic states at the indirect L valley of the GaAs conduction band.

Abramkin, D. S.; Putyato, M. A.; Budennyy, S. A.; Gutakovskii, A. K.; Semyagin, B. R.; Preobrazhenskii, V. V.; Shamirzaev, T. S. [A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Pr. Lavrentyeva 13, 630090 Novosibirsk (Russian Federation); Kolomys, O. F.; Strelchuk, V. V. [V. E. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, Pr. Nauki 41, 03028 Kiev (Ukraine)

2012-10-15T23:59:59.000Z

160

AC/DC Smart Control and Power Sharing of DC Distribution Systems.  

E-Print Network (OSTI)

?? The purpose of this research is to develop a grid connected DC distribution system to ensure efficient integration of different alternate sources to the (more)

Elshaer, Mohamed A

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

A review of DC micro-grid protection  

Science Conference Proceedings (OSTI)

In this paper, an overview of DC micro-grid is described, which includes the status of DC micro-grid protection and its future development. The paper presents the key techniques of DC micro-grid protection. So far, standards, guidelines and techniques ... Keywords: DC micro-grid, protection, protective devices, structures, technological gaps

Yuhong Xie, Jia Ning, Yanquan Huang, Junbo Jia, Zhihui Jian

2013-06-01T23:59:59.000Z

162

A single inductor dual input dual output DC-DC converter with hybrid supplies for solar energy harvesting applications  

Science Conference Proceedings (OSTI)

A single inductor dual input dual output (SIDIDO) DC-DC converter is proposed for solar energy harvesting applications. The converter supports hybrid power supplies from both the photovoltaic (PV) cells and the rechargeable battery. Apart from the conventional ... Keywords: DC-DC converter, MPPT, PV cells, dual-input-dual-output, energy harvesting, single inductor

Hui Shao; Chi-Ying Tsui; Wing-Hung Ki

2009-08-01T23:59:59.000Z

163

General Atomics (GA) Fusion News: A New Spin on Understanding...  

NLE Websites -- All DOE Office Websites (Extended Search)

General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New...

164

Rodefeld Landfill Ga Biomass Facility | Open Energy Information  

Open Energy Info (EERE)

Rodefeld Landfill Ga Biomass Facility Jump to: navigation, search Name Rodefeld Landfill Ga Biomass Facility Facility Rodefeld Landfill Ga Sector Biomass Facility Type Landfill Gas...

165

RECIPIENT:Gwinnett Co, GA  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

166

DC's Marble ceiling : urban height and its regulation in Washington, DC  

E-Print Network (OSTI)

Washington, DC has a unique urban form that is the result of a century-old law. Through the narrow lens of DC's height limit, I survey a range of topics related to urban height, starting with a review of its history of ...

Trueblood, Andrew Tyson

2009-01-01T23:59:59.000Z

167

Brief paper: Optimal switching instants for a switched-capacitor DC/DC power converter  

Science Conference Proceedings (OSTI)

We consider a switched-capacitor DC/DC power converter with variable switching instants. The determination of optimal switching instants giving low output ripple and strong load regulation is posed as a non-smooth dynamic optimization problem. By introducing ... Keywords: Control parametrization enhancing transform, Impulsive dynamical system, Power converter, Semi-infinite programming, Switched linear system

R. C. Loxton; K. L. Teo; V. Rehbock; W. K. Ling

2009-04-01T23:59:59.000Z

168

Good Energies (Washington DC) | Open Energy Information  

Open Energy Info (EERE)

Energies (Washington DC) Energies (Washington DC) Name Good Energies (Washington DC) Address 1250 24th St., NW, Suite 250 Place Washington, District of Columbia Zip 20037 Product Global investor in renewable energy and energy efficiency industries Year founded 2001 Phone number (202) 747-2550 Website http://www.goodenergies.com/ Coordinates 38.90649°, -77.051534° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":38.90649,"lon":-77.051534,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

169

Data:2e82dc6a-a54a-4043-8315-13718801ef05 | Open Energy Information  

Open Energy Info (EERE)

dc6a-a54a-4043-8315-13718801ef05 dc6a-a54a-4043-8315-13718801ef05 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Modesto Irrigation District Effective date: 2011/01/01 End date if known: Rate name: Schedule FL Flat Rate Service-Not Exceeding 50% Load Factor 1001 - 1200 Watt Sector: Commercial Description: Applicability This Schedule is applicable to small, constant, non-metered incidental loads for utilities, communication agencies, state agencies, and applicable special districts where the customer owns and maintains the equipment. The customer must supply equipment wattage to the District. Such loads would include: Cathodic Protection Stations Motor Radial Gates Pressure Point Automatic Watering Systems Flashing Beacons Sign Illumination Communication Power Booster Devices Monthly Usage: 282kWh

170

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

171

Optical modulation at around 1550 nm in a InGaAlAs optical waveguide containing a InGaAs/AlAs resonant tunnelling diode  

E-Print Network (OSTI)

We report electro-absorption modulation of light at around 1550 nm in a unipolar InGaAlAs optical waveguide containing a InGaAs/AlAs double-barrier resonant tunneling diode (DB-RTD). The RTD peak-to-valley transition increases the electric field across the waveguide, which shifts the core material absorption band-edge to longer wavelengths via the Franz-Keldysh effect, thus changing the light-guiding characteristics of the waveguide. Low-frequency characterisation of a device shows modulation up to 28 dB at 1565 nm. When dc biased close to the negative differential conductance (NDC) region, the RTD optical waveguide behaves as an electro-absorption modulator integrated with a wide bandwidth electrical amplifier, offering a potential advantage over conventional pn modulators.

Figueiredo, J M L; Stanley, C R; Ironside, C N; McMeekin, S G; Leite, A M P

1999-01-01T23:59:59.000Z

172

Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures  

Science Conference Proceedings (OSTI)

GaAsBi/GaAs/AlGaAs separate confinement heterostructures are grown using an asymmetric temperature profile due to the low optimal growth temperature of GaAsBi; the bottom AlGaAs barrier is grown at 610 Degree-Sign C, while the GaAsBi quantum well and the top AlGaAs barrier are grown at 320 Degree-Sign C. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that this approach results in samples with excellent structural and optical properties. The high quality of the low temperature AlGaAs barrier is attributed to the presence of Bi on the surface as indicated by a (1 Multiplication-Sign 3) surface reconstruction persisting throughout the low temperature growth.

Fan Dongsheng; Yu Shuiqing [Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Zeng Zhaoquan; Hu Xian; Dorogan, Vitaliy G.; Li Chen; Benamara, Mourad; Hawkridge, Michael E.; Mazur, Yuriy I.; Salamo, Gregory J. [Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Johnson, Shane R. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287-6206 (United States); Wang, Zhiming M. [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)

2012-10-29T23:59:59.000Z

173

SoC Energy Savings = Reduce+Reuse+Recycle: A Case Study Using a 660MHz DC-DC Converter with Integrated Output Filter  

E-Print Network (OSTI)

SoC Energy Savings = Reduce+Reuse+Recycle: A Case Study Using a 660MHz DC-DC Converter will use all 3 of these techniques in the DC-DC buck converter shown in Fig. 1. Energy reduction of the DC-DC converter front-end drivers. Power Converter supplied energy reused energy recycled energy

Lemieux, Guy

174

Perseus LLC (Washington DC) | Open Energy Information  

Open Energy Info (EERE)

DC) DC) Jump to: navigation, search Logo: Perseus LLC (Washington DC) Name Perseus LLC (Washington DC) Address 2099 Pennsylvania Avenue, N.W., 9th Floor Place Washington, District of Columbia Zip 20006 Product Private equity fund Year founded 1995 Phone number (202) 452-0101 Website http://www.perseusllc.com/ Coordinates 38.901462°, -77.046347° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":38.901462,"lon":-77.046347,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

175

Halbach array DC motor/generator  

DOE Patents (OSTI)

A new configuration of DC motor/generator is based on a Halbach array of permanent magnets. This motor does not use ferrous materials so that the only losses are winding losses and losses due to bearings and windage. An "inside-out" design is used as compared to a conventional motor/generator design. The rotating portion, i.e., the rotor, is on the outside of the machine. The stationary portion, i.e., the stator, is formed by the inside of the machine. The rotor contains an array of permanent magnets that provide a uniform field. The windings of the motor are placed in or on the stator. The stator windings are then "switched" or "commutated" to provide a DC motor/generator much the same as in a conventional DC motor. The commutation can be performed by mechanical means using brushes or by electronic means using switching circuits. The invention is useful in electric vehicles and adjustable speed DC drives.

Merritt, Bernard T. (Livermore, CA); Dreifuerst, Gary R. (Livermore, CA); Post, Richard F. (Walnut Creek, CA)

1998-01-01T23:59:59.000Z

176

Halbach array DC motor/generator  

DOE Patents (OSTI)

A new configuration of DC motor/generator is based on a Halbach array of permanent magnets. This motor does not use ferrous materials so that the only losses are winding losses and losses due to bearings and windage. An ``inside-out`` design is used as compared to a conventional motor/generator design. The rotating portion, i.e., the rotor, is on the outside of the machine. The stationary portion, i.e., the stator, is formed by the inside of the machine. The rotor contains an array of permanent magnets that provide a uniform field. The windings of the motor are placed in or on the stator. The stator windings are then ``switched`` or ``commutated`` to provide a DC motor/generator much the same as in a conventional DC motor. The commutation can be performed by mechanical means using brushes or by electronic means using switching circuits. The invention is useful in electric vehicles and adjustable speed DC drives. 17 figs.

Merritt, B.T.; Dreifuerst, G.R.; Post, R.F.

1998-01-06T23:59:59.000Z

177

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

DOE Green Energy (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

178

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells  

E-Print Network (OSTI)

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells I. Friel, C online 20 June 2005 An ultraviolet electroabsorption modulator based on AlGaN/GaN quantum wells is demonstrated. Enhanced excitonic absorption in the quantum wells at around 3.48 eV was achieved using

Moustakas, Theodore

179

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network (OSTI)

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

180

SUBCONTRACT REPORT: DC-DC Converter for Fuel Cell and Hybrid Vehicles  

DOE Green Energy (OSTI)

The goal of this project is to develop and fabricate a 5kW dc-dc converter with a baseline 14V output capability for fuel cell and hybrid vehicles. The major objectives for this dc-dc converter technology are to meet: Higher efficiency (92%); High coolant temperature,e capability (105 C); High reliability (15 Years/150,000miles); Smaller volume (5L); Lower weight (6kg); and Lower cost ($75/kW). The key technical challenge for these converters is the 105 C coolant temperatures. The power switches and magnetics must be designed to sustain these operating temperatures reliably, without a large cost/mass/volume penalty.

Marlino, Laura D [ORNL; Zhu, Lizhi [Ballard Power Systems/Siemens VDO

2007-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Optimizing Energy Savings from Direct-DC in U.S. Residential Buildings  

E-Print Network (OSTI)

and S.P. Jamieson, DC Microgrids: Benefits and Barriers.of direct-DC and DC microgrids in residential and commercial

Garbesi, Karina

2012-01-01T23:59:59.000Z

182

Custom DC-DC converters for distributing power in SLHC trackers  

E-Print Network (OSTI)

A power distribution scheme based on the use of on-board DC-DC converters is proposed to efficiently distribute power to the on-detector electronics of SLHC trackers. A comparative analysis of different promising converter topologies is presented, leading to the choice of a magneticbased buck converter as a first conversion stage followed by an on-chip switched capacitors converter. An overall efficiency above 80% is estimated for the practical implementation proposed.

Allongue, B; Blanchot, G; Faccio, F; Fuentes, C; Mattavelli, P; Michelis, S; Orlandis, S; Spiazzi, G

2008-01-01T23:59:59.000Z

183

Utility Direct Medium Voltage DC Fast Charger Update: DC Fast Charger Characterization  

Science Conference Proceedings (OSTI)

EPRI developed a fact charging technology for electric vehicles based on a solid state transformer technology known as the Intelligent Universal Transformer (IUT). The IUT technology replaces both the independent power conversion units as well as the conventional transformer with a single interface system which can be used for fast charging of electric vehicles. The versatility of the IUT provides an intermediate DC bus voltage at the 400-V level that can be directly used for a DC distribution ...

2012-12-31T23:59:59.000Z

184

PowerCentsDC Program Final Report | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

initiated PowerCentsDC to test the reactions and impacts on consumer behavior of smart prices, smart meters, and smart thermostats in the District of Columbia. PowerCentsDC Program...

185

Definition: DC Resistivity Survey (Wenner Array) | Open Energy...  

Open Energy Info (EERE)

Wenner Array) Jump to: navigation, search Dictionary.png DC Resistivity Survey (Wenner Array) The Wenner array is a type of electrode configuration for a DC resistivity survey and...

186

Definition: DC Resistivity Survey (Pole-Dipole Array) | Open...  

Open Energy Info (EERE)

Pole-Dipole Array) Jump to: navigation, search Dictionary.png DC Resistivity Survey (Pole-Dipole Array) The Pole-Dipole array is a type of electrode configuration for a DC...

187

User Science Exhibition March 28-29 in Washington DC  

NLE Websites -- All DOE Office Websites (Extended Search)

User Science Exhibition March 28-29 in Washington DC User Science Exhibition March 28-29 in Washington DC February 17, 2012 by Francesca Verdier (0 Comments) This March 28 and 29...

188

D.C. WRRC Report No. GLOSSARY OF USEFUL  

E-Print Network (OSTI)

#12;#12;D.C. WRRC Report No. GLOSSARY OF USEFUL WATER RESEARCH TERMS The D.C. Water Resources PREFACE The glossary of water research terms was prepared from a compilation of glossaries from various

District of Columbia, University of the

189

System Tests with DC-DC Converters for the CMS Silicon Strip Tracker at SLHC  

E-Print Network (OSTI)

The delivery of power is considered to be one of the major challenges for the upgrade of the CMS silicon strip tracker for SLHC. The inevitable increase in granularity and complexity of the device is expected to result in a power consumption comparable or even higher than the power consumption of todays' strip tracker. However, the space available for cables will remain the same. In addition, a further increase of the tracker material budget due to cables and cooling is considered inacceptable, as the performance of the CMS detector must not be compromised for the upgrade. Novel powering schemes such as serial powering or usage of DC-DC converters have been proposed to solve the problem. To test the second option, substructures of the current CMS silicon strip tracker have been operated for the first time with off-the-shelf DC-DC buck converters as well as with first prototypes of custom-designed DC-DC converters. The tests are described and the results are discussed.

Klein, K; Karpinski, W; Merz, J; Sammet, J

2008-01-01T23:59:59.000Z

190

DETEW!INATION OF THE NEUTRON MAGNETIC FlONENT G.L. Greene and N.F. Ramsey  

NLE Websites -- All DOE Office Websites (Extended Search)

DETEW!INATION OF THE NEUTRON MAGNETIC FlONENT DETEW!INATION OF THE NEUTRON MAGNETIC FlONENT * G.L. Greene and N.F. Ramsey Harvard U n i v e r s i t y , Cambridge, N a s s a c h u s e t t s 02138 h W. Plampe i - I n s t i t u t Laue-Langevin, 38042 Grenoble, France' 9/ \ P J . M . P e n d l e b u r y and K. Smith " ' , \30ddb * A , 4 U n i v e r s i t y o f S u s s e x , Falmer, B r i g h t o n , B N I 9 Q H , U n i t e d Kingdom W . B . Dress and P.D. Miller -3 Oak Ridge N a t i o n a l L a b o r a t o r y , Oak Ridge, Tennessee 37838 P a u l P e r r i n C e n t r e d ' E t u d e s N u c l e a i r e s , 38042 C r e n o b l e , F r a n c e The n e u t r o n m a g n e t i c moment h a s been measured w i t h an improvement of a f a c t o r of 100 o v e r t h e p r e v i o u s b e s t measurement. s p e c t r o m e t e r o f t h e s e p a r a t e d o s c i l l a t o r y f i e l d t y p e c a p a b l e o f d e t e r m i n i n g a r e s o n a n c e s i g n a l f o r b o t h n e u t r o n s and p r o t o n s ( i n f l o w i n g H20), we f i n d u n / p p = 0.68497935(17)

191

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

Science Conference Proceedings (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

192

A DC CIRCUIT BREAKER FOR AN ELECTRIC VEHICLE BATTERY PACK  

E-Print Network (OSTI)

A DC CIRCUIT BREAKER FOR AN ELECTRIC VEHICLE BATTERY PACK Geoff Walker Dept of Computer Science vehicle battery packs require DC circuit breakers for safety. These must break thousands of Amps DC at hundreds of Volts. The Sunshark solar racing car has a 140V 17Ahr battery box which needs such a breaker

Walker, Geoff

193

EE443L Lab 2: Modeling a DC Motor Introduction  

E-Print Network (OSTI)

: In this lab we will develop and validate a basic model of a permanent magnet DC motor (Yaskawa Electric MINI'll discuss a permanent magnet DC motor whose stator consists of a permanent magnet. In this case, we can take in the empty blocks. Figure 2: A block diagram of a permanent magnet DC motor. Prelab Questions: 1) From your

Wedeward, Kevin

194

Record of Decision for the Orlando Gasification Project, Orlando, Orange County, FL (DOE/EIS-0383)(04/06/07)  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

43 Federal Register 43 Federal Register / Vol. 72, No. 66 / Friday, April 6, 2007 / Notices c. Submission of Paper Applications by Hand Delivery. If you submit your application in paper format by hand delivery, you (or a courier service) must deliver the original and two copies of your application by hand, on or before the application deadline date, to the Department at the following address: U.S. Department of Education, Application Control Center, Attention: (CFDA Number 84.184E), 550 12th Street, SW., Room 7041, Potomac Center Plaza, Washington, DC 20202-4260. The Application Control Center accepts hand deliveries daily between 8 a.m. and 4:30 p.m., Washington, DC time, except Saturdays, Sundays, and Federal holidays. Note for Mail or Hand Delivery of Paper Applications: If you mail or hand deliver

195

Design of a step-down DC-DC controller integrated circuit with adaptive dead-time control  

E-Print Network (OSTI)

A constant-frequency peak current mode synchronous step-down DC-DC controller integrated circuit has been designed with adaptive dead-time control. The adaptive dead-time control circuitry is implemented as digital ...

Li, Zhipeng, M. Eng. Massachusetts Institute of Technology

2010-01-01T23:59:59.000Z

196

A fully integrated switched-capacitor DC-DC converter with dual output for low power application  

Science Conference Proceedings (OSTI)

This paper presents a fully integrated on-chip switched-capacitor (SC) DC-DC converter that supports two regulated power supply voltages of 2.2V and 3.2V from 5V input supply and delivers the maximum load currents up to 8mA at both of the outputs. The ... Keywords: dc-dc converter, dual output, switched-capacitor

Heungjun Jeon; Yong-Bin Kim

2012-05-01T23:59:59.000Z

197

Notices 888 First Street, NE., Washington, DC  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

11 Federal Register 11 Federal Register / Vol. 76, No. 122 / Friday, June 24, 2011 / Notices 888 First Street, NE., Washington, DC 20426. The filings in the above-referenced proceeding are accessible in the Commission's eLibrary system by clicking on the appropriate link in the above list. They are also available for review in the Commission's Public Reference Room in Washington, DC. There is an eSubscription link on the Web site that enables subscribers to receive e-mail notification when a document is added to a subscribed docket(s). For assistance with any FERC Online service, please e-mail FERCOnlineSupport@ferc.gov or call (866) 208-3676 (toll free). For TTY, call (202) 502-8659. Dated: June 20, 2011. Kimberly D. Bose, Secretary. [FR Doc. 2011-15859 Filed 6-23-11; 8:45 am]

198

Notices 888 First Street NE., Washington, DC  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

53 Federal Register 53 Federal Register / Vol. 78, No. 56 / Friday, March 22, 2013 / Notices 888 First Street NE., Washington, DC 20426. This filing is accessible on-line at http://www.ferc.gov, using the ''eLibrary'' link and is available for review in the Commission's Public Reference Room in Washington, DC. There is an ''eSubscription'' link on the Web site that enables subscribers to receive email notification when a document is added to a subscribed docket(s). For assistance with any FERC Online service, please email FERCOnlineSupport@ferc.gov, or call (866) 208-3676 (toll free). For TTY, call (202) 502-8659. Comment Date: 5:00 p.m. Eastern Time on April 2, 2013. Dated: March 15, 2013. Kimberly D. Bose, Secretary. [FR Doc. 2013-06602 Filed 3-21-13; 8:45 am] BILLING CODE 6717-01-P

199

DC side filters for multiterminal HVDC systems  

SciTech Connect

Multiterminal HVDC systems present challenges in the specification and design of suitable dc side filtering. This document examines the existing experience and addresses the particular technical problems posed by multiterminal systems. The filtering requirements of small taps are discussed, as is the potential use of active filters. Aspects of calculation and design are considered and recommendations made to guide the planners and designers of future multiterminal schemes.

Shore, N.L.; Adamson, K.; Bard, P. [and others

1996-10-01T23:59:59.000Z

200

Band offsets in ZrO{sub 2}/InGaZnO{sub 4} heterojunction  

SciTech Connect

X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band ( White-Up-Pointing-Triangle E{sub V}) of amorphous InGaZnO{sub 4} (a-IGZO)/ZrO{sub 2} heterostructure deposited by DC and RF sputtering at room temperature, respectively. A value of White-Up-Pointing-Triangle E{sub V}= 0 eV was obtained by using the Ga and Zn 2p{sup 3} and In 3d{sup 3} energy levels as references. Given the experimental band gap of 3.1 eV and 5.8 eV for the a-IGZO and ZrO{sub 2}, respectively, this would indicate a conduction band offset of 2.7 eV in the system.

Yao Jianke [School of Computer and Information Engineering, Shenzhen Graduate School, Peking University, Shenzhen 518055 (China); Zhang Shengdong [School of Computer and Information Engineering, Shenzhen Graduate School, Peking University, Shenzhen 518055 (China); Institute of Microelectronics, Peking University, Beijing 100871 (China); Gong Li [Instrumental Analysis and Research Center, Sun Yat-Sen University, Guangzhou 510275 (China)

2012-08-27T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures  

Science Conference Proceedings (OSTI)

Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

2012-12-24T23:59:59.000Z

202

AC-to-DC Power Transmission Line Conversion  

Science Conference Proceedings (OSTI)

System planners have grown more interest in the prospect of converting ac transmission lines to dc as transfer constraints become more severe and they increasingly recognize dc as a means to improve ac system performance. Two factors have influenced the economic case for conversion. The first is development of a new (tripole) dc configuration that allows dc to make full use of all three ac phase positions without the need for earth return. The second is the realization that converting an ac line to dc ma...

2010-11-10T23:59:59.000Z

203

Program on Technology Innovation: A Superconducting DC Cable  

Science Conference Proceedings (OSTI)

Shortly after the beginning of the twentieth century, dc power transmission was replaced by ac in order to achieve efficient transmission of electric power over long distances with available conductors and at safe distribution voltages. However, dc power was not completely abandoned, and the advent of solid-state power electronic ac-to-dc conversion equipment has reinvigorated its application. High-voltage dc power is more desirable for long-range transmission than ac in many ways: dc uses two wires rath...

2009-12-15T23:59:59.000Z

204

InGaAsN/GaAs heterojunction for multi-junction solar cells  

DOE Patents (OSTI)

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

2001-01-01T23:59:59.000Z

205

Energy Incentive Programs, Washington DC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Washington DC Washington DC Energy Incentive Programs, Washington DC October 29, 2013 - 11:29am Addthis Updated August 2013 What public-purpose-funded energy efficiency programs are available in the District of Columbia? In 2008, the Council of the District of Columbia passed the Clean and Affordable Energy Act (CAEA), establishing the DC Sustainable Energy Utility (DC SEU), whose mission is to provide energy assistance to low-income residents and support energy efficiency and renewable energy programs. The DC SEU, funded by the Sustainable Energy Trust Fund (also created by the CAEA) and under contract to the District Department of the Environment (DDOE), helps District residents, businesses, and institutions save energy and money. The DC SEU provides comprehensive energy services to targeted, prioritized

206

Wide input range DC-DC converter with digital control scheme  

E-Print Network (OSTI)

In this thesis analysis and design of a wide input range DC-DC converter is proposed along with a robust power control scheme. The proposed converter and its control is designed to be compatible to a fuel cell power source, which exhibits 2:1 voltage variation as well as a slow transient response. The proposed approach consists of two stages: a primary three-level boost converter stage cascaded with a high frequency, isolated boost converter topology, which provides a higher voltage gain and isolation from the input source. The function of the first boost converter stage is to maintain a constant voltage at the input of the cascaded DC-DC converter to ensure optimal performance characteristics with high efficiency. At the output of the first boost converter a battery or ultracapacitor energy storage is connected to take care of the fuel cell slow transient response (200 watts/min). The robust features of the proposed control system ensure a constant output DC voltage for a variety of load fluctuations, thus limiting the power being delivered by the fuel cell during a load transient. Moreover, the proposed configuration simplifies the power control management and can interact with the fuel cell controller. The simulation results and the experimental results confirm the feasibility of the proposed system.

Harfman Todorovic, Maja

2004-12-01T23:59:59.000Z

207

Connectivity and Bidirectional Energy Transfer in DC Microgrid Featuring Different Voltage Characteristics  

Science Conference Proceedings (OSTI)

In this paper, the connectivity issues related to linking two DC buses featuring different voltage characteristics, in terms of voltage level and ripple, in a DC micro grid are identified, analyzed and discussed. A controlled DC-DC converter was used ... Keywords: Bidirectional energy transfer, buck-boost converter, DC distribution systems, DC microgrids, voltage ripple

Mustafa Farhadi, Ahmed Mohamed, Osama Mohammed

2013-04-01T23:59:59.000Z

208

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

209

System Integration Issues of DC to DC converters in the sLHC Trackers  

E-Print Network (OSTI)

The upgrade of the trackers at the sLHC experiments requires implementing new powering schemes that will provide an increased power density with reduced losses and material budget. A scheme based on buck and switched capacitors DC to DC converters has been proposed as an optimal solution. The buck converter is based on a power ASIC, connected to a custom made air core inductor. The arrangement of the parts and the board layout of the power module are designed to minimize the emissions of EMI in a compact volume, enabling its integration on the tracker modules and staves.

Allongue, B; Faccio, F; Fuentes, c; Michelisa, S; Orlandia, S

2009-01-01T23:59:59.000Z

210

passivation of InGaN/GaN nanopillar light emitting diodes.  

E-Print Network (OSTI)

??Recently, InGaN/GaN based blue light emitting diodes (LEDs) have become widely available commercially, but their efficiency is reduced due to the quantum confined Stark effect (more)

Choi, Won

2013-01-01T23:59:59.000Z

211

Detailed Analysis of Temperature Characteristics of InGaP/InGaAs ...  

Science Conference Proceedings (OSTI)

The current-voltage (I-V) characteristics of single-junction solar cells (InGaP, InGaAs, Ge solar cells) were measured at various temperatures. The structures of ...

212

AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy  

SciTech Connect

The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

C.A. Wang; C.J. Vineis; D.R. Calawa

2002-02-13T23:59:59.000Z

213

GA 30+-90 / GA 37-90 VSD: Oil-injected rotary screw ...  

U.S. Energy Information Administration (EIA)

GA 30+-90 / GA 37-90 VSD: Oil-injected rotary screw compressors, 30-90 kW / 40-125 hp,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading air ...

214

GA 11+-30/GA 15-30 VSD: Oil-injected rotary screw compressors ...  

U.S. Energy Information Administration (EIA)

GA 11+-30/GA 15-30 VSD: Oil-injected rotary screw compressors, 11-30 kW / 15-40 hp,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading air ...

215

GA 90+-160+ / GA 110-160 VSD: Oil-injected rotary screw ...  

U.S. Energy Information Administration (EIA)

GA 90+-160+ / GA 110-160 VSD: Oil-injected rotary screw compressors, 90-160 kW / 125-200 hp.,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading ...

216

Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells  

E-Print Network (OSTI)

Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells Shunfeng Li Cubic InGaN/GaN multi-quantum-wells MQWs with high structural and optical quality are achieved by utilizing freestanding 3C-SiC 001 substrates and optimizing InGaN quantum well growth. Superlattice peaks up

As, Donat Josef

217

Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT  

Science Conference Proceedings (OSTI)

Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

Lenka, T. R., E-mail: trlenka@gmail.com; Panda, A. K., E-mail: akpanda62@hotmail.com [National Institute of Science and Technology, Palur Hills (India)

2011-05-15T23:59:59.000Z

218

Washington DC's First Electric Vehicle Charging Station | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Washington DC's First Electric Vehicle Charging Station Washington DC's First Electric Vehicle Charging Station Washington DC's First Electric Vehicle Charging Station November 17, 2010 - 11:28am Addthis Street signage for Washington, DC's first electric vehicle charging station located on the northwest corner of the intersection of U and 14th streets. | Department of Energy Photo | Street signage for Washington, DC's first electric vehicle charging station located on the northwest corner of the intersection of U and 14th streets. | Department of Energy Photo | Shannon Brescher Shea Communications Manager, Clean Cities Program It's always exciting to attend a grand opening, especially when it represents a "first" for an entire region. Yesterday, the U.S. Department of Energy and the city of Washington, DC joined together to

219

Quantized states in homogenous polarized GaInN GaN quantum wells  

E-Print Network (OSTI)

Quantized states in homogenous polarized GaInN GaN quantum wells C. Wetzel1, S. Kamiyama1, H. Amano wells is calculated in a single particle model. The act- ing electric eld in the wells and the band gap-dimensional well layers our approach is based on induction from results obtained at the binary GaN barri- ers

Wetzel, Christian M.

220

PIEZOELECTRIC LEVEL SPLITTING IN GaInN/GaN QUANTUM WELLS  

E-Print Network (OSTI)

PIEZOELECTRIC LEVEL SPLITTING IN GaInN/GaN QUANTUM WELLS C. Wetzel, T. Takeuchi, H. Amano, and IInN/GaN multiple quantum well samples in a large set of variable composition a clear correspondence of transitions in photo- and electroreflection, as well as photoluminescence is found. The effective band offset across

Wetzel, Christian M.

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221

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells  

E-Print Network (OSTI)

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells Marcus Eickhoff* and Dieter Suter, nanometer-sized quantum wells possible with excellent sensitivity and selectivity while avoiding.60.-k; 78.55.Cr; 78.67.De Keywords: ODNMR; Pulsed excitation; Quantum well; GaAs 1. Introduction Nuclear

Suter, Dieter

222

Spontaneous emission in GaN/InGaN photonic crystal nanopillars  

E-Print Network (OSTI)

. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

Recanati, Catherine

223

Princeton Plasma Physics Lab - General Atomics (GA)  

NLE Websites -- All DOE Office Websites (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
224

TMS P&GA Wired to Washington  

Science Conference Proceedings (OSTI)

P & GA COMMITTEE HOME ... the connection between MSE and such key U.S. initiatives as national security, energy independence, and economic growth.

225

Y2, Threading Defect Elimination in GaN Nanostructures  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

226

Surface science analysis of GaAs photocathodes following sustained electron beam delivery  

DOE Green Energy (OSTI)

Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power Free Electron Lasers (FEL). Photocathode quantum efficiency (QE) degradation is due to residual gasses in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes, which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include Helium Ion Microscopy (HIM), Rutherford Backscattering Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the Continuous Electron Beam Accelerator Facility (CEBAF) photoinjector and one unused, were also analyzed using Transmission Electron Microscopy (TEM) and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but shows evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.

Carlos Hernandez-Garcia, Fay Hannon, Marcy Stutzman, V. Shutthanandan, Z. Zhu, M. Nandasri, S. V. Kuchibhatla, S. Thevuthasan, W. P. Hess

2012-06-01T23:59:59.000Z

227

On DC. optimization algorithms for solving minmax flow problems ?  

E-Print Network (OSTI)

Jun 17, 2011 ... Email: ldmuu@math.ac.vn. Le Quang Thuy ..... programming and DCA revisited with DC models of real world nonconvex optimization problems...

228

On DC. optimization algorithms for solving minmax flow problems  

E-Print Network (OSTI)

Jun 16, 2011 ... math.ac.vn) ... (Difference of convex functions) programming and DCA revisited with DC models of real world nonconvex optimization problems,...

229

UNITED STATES OFFICE OF PERSONNEL MANAGEMENT Washington, DC  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

OFFICE OF PERSONNEL MANAGEMENT Washington, DC 20415 The Director November 8, 2010 MEMORANDUM FOR HEADS OF DEPARTMENTS AND AGENCIES FROM: JOHN BERRY ( . .. (t"t-.. DIRECTOR...

230

Simultaneous distribution of AC and DC power - Energy ...  

... Alternating Current) as well as the elimination of equipment normally used to reconvert AC back to DC for components of HVAC systems, ...

231

DC Hazardous Waste Management (District of Columbia) | Open Energy...  

Open Energy Info (EERE)

District of Columbia Applies to Municipality District of Columbia Name DC Hazardous Waste Management (District of Columbia) Policy Type Environmental Regulations Affected...

232

Calibrated Broadband DC-Coupled High Impedance Pickoff ...  

Craig E. Deibele, Brian Link, and Vladimir V. Peplov, Calibrated Broadband DC-Coupled High Impedance Pickoff Circuit for Remote Monitoring

233

AC vs DC Wizard Version 1.0  

Science Conference Proceedings (OSTI)

AC vs DC Wizard compares the use of HVDC to HVAC in both new and existing overhead lines and in new underground cable ...

2012-12-04T23:59:59.000Z

234

DC Resistivity Survey (Gradient Array) | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Technique: DC Resistivity Survey (Gradient Array) edit Details Activities (0) Areas (0) Regions (0)...

235

Exploring the Raft River geothermal area, Idaho, with the dc...  

Open Energy Info (EERE)

Home Journal Article: Exploring the Raft River geothermal area, Idaho, with the dc resistivity method (Abstract) edit Details Activities (1) Areas (1) Regions (0)...

236

DC Resistivity Survey (Schlumberger Array) At Raft River Geothermal...  

Open Energy Info (EERE)

Community Login | Sign Up Search Page Edit History Facebook icon Twitter icon DC Resistivity Survey (Schlumberger Array) At Raft River Geothermal Area (1974-1975) Jump...

237

DOE Solar Decathlon: Team Capitol DC: The Catholic University...  

NLE Websites -- All DOE Office Websites (Extended Search)

Capitol DC: The Catholic University of America, George Washington University, and American University Team website: www.teamcapitoldc.org Photo of members of the Catholic...

238

Microsoft PowerPoint - NETL Pittsburgh, PA to Washington, DC...  

NLE Websites -- All DOE Office Websites (Extended Search)

PA. 2. Merge RIGHT via Exit 161 onto I-70 EAST toward BREEZEWOODUS-30 BALTIMOREWASHINGTON, DC (follow US-30 through Breezewood). , ( g ) 3. At FREDERICKSBURG, merge...

239

Embassy of Cuba in Washington, DC: Image, Site, Program.  

E-Print Network (OSTI)

??This thesis postulates the design of an official Embassy of Cuba in Washington, DC, following the resumption of diplomatic relations between the two countries. An (more)

Fishman, Ian C

2008-01-01T23:59:59.000Z

240

Washington DC Reliability Requirements and the Need to Operate...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Washington DC Reliability Requirements and the Need to Operate Mirant's Potomac River Generation Station to Support Local Area Reliability (Oak Ridge National Laboratory 2005)...

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Participatory Music Making and Affinity in Washington, DC Irish Sessions.  

E-Print Network (OSTI)

??The Washington, DC metropolitan area hosts a vibrant Irish music scene. Like those in many Irish sessions found throughout the world, the District's network of (more)

Flynn, Erin Michele

2011-01-01T23:59:59.000Z

242

Communications: NREL Letterhead Template for DC General Use ...  

What NREL technology (ies) are you interested in? What type of license ... Communications: NREL Letterhead Template for DC General Use - Black and White

243

Communications: NREL Letterhead Template for DC General Use ...  

What NREL technology are you interested in? Why? 2. ... Communications: NREL Letterhead Template for DC General Use - Black and White Subject:

244

Gas Prices  

NLE Websites -- All DOE Office Websites (Extended Search)

Prices Gasoline Prices for U.S. Cities Click on the map to view gas prices for cities in your state. AK VT ME NH NH MA MA RI CT CT DC NJ DE DE NY WV VA NC SC FL GA AL MS TN KY IN...

245

C:\\ANNUAL\\VENTCHAP.V8\\NGA.VP  

Gasoline and Diesel Fuel Update (EIA)

4 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99...

246

Microsoft Word - NGAMaster_State_TablesNov12.doc  

Gasoline and Diesel Fuel Update (EIA)

WI NE IA KS MO TX IL IN OH MI OK AR TN WV VA KY MD PA WI NY VT NH MA CT ME RI NJ DC NC SC GA AL MS LA FL HI AK DE 0 2 4 6 8 10 1980 1982 1984 1986 1988 1990 1992 1994 1996 1998...

247

C:\\ANNUAL\\VENTCHAP.V8\\NewNGA02.vp  

Gasoline and Diesel Fuel Update (EIA)

NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK 15. Marketed Production of Natural Gas in the United States, 2001...

248

C:\\ANNUAL\\VENTCHAP.V8\\NGAla1109.vp  

Gasoline and Diesel Fuel Update (EIA)

0 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Sources: Energy...

249

NGA98fin5.vp  

Annual Energy Outlook 2012 (EIA)

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99...

250

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

DOE Green Energy (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

251

Data:61fa820f-07d1-4241-a53a-6dc1bce26e20 | Open Energy Information  

Open Energy Info (EERE)

fa820f-07d1-4241-a53a-6dc1bce26e20 fa820f-07d1-4241-a53a-6dc1bce26e20 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Cobb Electric Membership Corp Effective date: 2006/01/01 End date if known: Rate name: Outdoor Lighting Overhead Service MH 1000 W FL Additional Fixture Sector: Lighting Description: Pole Contributions Wood 30' $246.00 Wood 35' $297.00 Wood 40' $382.00 Wood 45' $424.00 Source or reference: https://www.cobbemc.com/~/media/Files/CEMC/PDFs/2012%20PDF/233%20Lighting%20Rates%202012.pdf Source Parent: Comments Applicability Demand (kW) Minimum (kW): Maximum (kW): History (months): Energy (kWh)

252

Data:64340f38-6dc2-4fbb-b11e-2ae816e3baed | Open Energy Information  

Open Energy Info (EERE)

40f38-6dc2-4fbb-b11e-2ae816e3baed 40f38-6dc2-4fbb-b11e-2ae816e3baed No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Cobb Electric Membership Corp Effective date: 2006/01/01 End date if known: Rate name: Outdoor Lighting Overhead Service HPS 1000 W FL Additional Fixture Sector: Lighting Description: Pole Contributions Wood 30' $246.00 Wood 35' $297.00 Wood 40' $382.00 Wood 45' $424.00 Source or reference: https://www.cobbemc.com/~/media/Files/CEMC/PDFs/2012%20PDF/233%20Lighting%20Rates%202012.pdf Source Parent: Comments Applicability Demand (kW) Minimum (kW): Maximum (kW): History (months): Energy (kWh)

253

Data:D89dc81e-628b-4221-b91d-a8a7761be095 | Open Energy Information  

Open Energy Info (EERE)

dc81e-628b-4221-b91d-a8a7761be095 dc81e-628b-4221-b91d-a8a7761be095 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: City of Concord, North Carolina (Utility Company) Effective date: 2012/10/01 End date if known: Rate name: REPS Rider- Residential Sector: Residential Description: Service supplied to the City's retail customers is subject to a REPS Monthly Charge applied to each customer agreement for service on a residential, general service, or industrial service rate schedule. This charge is adjusted annually, pursuant to North Carolina General Statute 62-133.8 and North Carolina Utilities Commission Rule R8-67 as ordered by the North Carolina Utilities Commission. This Rider is not applicable to agreements for the City's outdoor lighting rate schedules, OL, PL, or FL, nor for services defined as auxiliary to another agreement. An auxiliary service is defined as a non-demand metered, nonresidential service, at the same premises, and with the same service address and same account name as the customer of record.

254

Price of Elba Island, GA Liquefied Natural Gas Total Imports...  

Annual Energy Outlook 2012 (EIA)

Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per Thousand Cubic Feet) Price of Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per Thousand Cubic Feet)...

255

National Press Club Washington, D.C.  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Is the Energy Race our new Is the Energy Race our new "Sputnik" Moment? National Press Club Washington, D.C. 29 November, 2010 1 October 4, 1957, the Soviet Union placed a 184 pound satellite into orbit. "The Soviet Union now has - in the combined category of scientists and engineers - a greater number than the United States. And it is producing graduates in these fields at a much faster rate ... This trend is disturbing. Indeed, according to my scientific advisers, this is for the American people the most critical problem of all. My scientific advisers place this problem above all other immediate tasks of producing missiles, of developing new techniques in the Armed Services. We need scientists in the ten years ahead..." On November 13, 1957, President Eisenhower

256

Department.,of Energy Washington; DC'  

Office of Legacy Management (LM)

,of Energy ,of Energy Washington; DC' 20585 JAN 1 1 1995 / .,, .- L ., The Honorable Thomas Menino ', 1 City Hall Square Boston, Massachusetts 02201 ,'. " p' ifi.. ' . .' b I,' \ Dear.Mayor.Me$ino: DOE's Formerly Util,ized for identification of sites.used by*DOEfs predecessor' agencies, determining, their current radiological condition and, where it has authority, performing remedial action to cleanup sites to meet current radiologicalprotection requirements.~ A conservative set of.technical evaluation guidelines4s used in these investigat~ions' toTassure protection of public health, safety and the .environment. Where DOE does not have authority.for proceeding, the available site information is forwarded to the appropriate Federal or State Agency,. DOE studied the historical records of the former ,Tracerlab, Inc. sitei'and it

257

Dissipative Cryogenic Filters with Zero DC Resistance  

SciTech Connect

The authors designed, implemented and tested cryogenic RF filters with zero DC resistance, based on wires with a superconducting core inside a resistive sheath. The superconducting core allows low frequency currents to pass with negligible dissipation. Signals above the cutoff frequency are dissipated in the resistive part due to their small skin depth. The filters consist of twisted wire pairs shielded with copper tape. Above approximately 1 GHz, the attenuation is exponential in {radical}{omega}, as typical for skin depth based RF filters. By using additional capacitors of 10 nF per line, an attenuation of at least 45 dB above 10 MHz can be obtained. Thus, one single filter stage kept at mixing chamber temperature in a dilution refrigerator is sufficient to attenuate room temperature black body radiation to levels corresponding to 10 mK above about 10 MHz.

Bluhm, Hendrik; Moler, Kathryn A.; /Stanford U., Appl. Phys. Dept

2008-04-22T23:59:59.000Z

258

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

259

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

260

Read-out electronics for DC squid magnetic measurements  

DOE Patents (OSTI)

Read-out electronics for DC SQUID sensor systems, the read-out electronics incorporating low Johnson noise radio-frequency flux-locked loop circuitry and digital signal processing algorithms in order to improve upon the prior art by a factor of at least ten, thereby alleviating problems caused by magnetic interference when operating DC SQUID sensor systems in magnetically unshielded environments.

Ganther, Jr., Kenneth R. (Olathe, KS); Snapp, Lowell D. (Independence, MO)

2002-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Dynamic microscopic theory of fusion using DC-TDHF  

Science Conference Proceedings (OSTI)

The density-constrained time-dependent Hartree-Fock (DC-TDHF) theory is a fully microscopic approach for calculating heavy-ion interaction potentials and fusion cross sections below and above the fusion barrier. We discuss recent applications of DC-TDHF method to fusion of light and heavy systems.

Umar, A. S.; Oberacker, V. E.; Keser, R.; Maruhn, J. A.; Reinhard, P.-G. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); RTE University, Science and Arts Faculty, Department of Physics, 53100, Rize (Turkey); Institut fuer Theoretische Physik, Goethe-Universitaet, D-60438 Frankfurt am Main (Germany); Institut fur Theoretische Physik, Universitat Erlangen, D-91054 Erlangen (Germany)

2012-10-20T23:59:59.000Z

262

Data:4a6dc4d3-60de-422a-a2bd-da5815194aa5 | Open Energy Information  

Open Energy Info (EERE)

dc4d3-60de-422a-a2bd-da5815194aa5 dc4d3-60de-422a-a2bd-da5815194aa5 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Washington Elec Member Corp Effective date: End date if known: Rate name: Rate-14 (MS) Sector: Description: Available in all territory served by the Cooperative, subject to the Cooperative's established Service Rules and Regulations, and subject to the execution of a contract for service mutually agreed upon by the Cooperative and the consumer. Source or reference: http://facts.psc.state.ga.us/Public/GetDocument.aspx?ID=129296 Source Parent: Comments rates have been redacted

263

Historical Material Analysis of DC745U Pressure Pads  

SciTech Connect

As part of the Enhance Surveillance mission, it is the goal to provide suitable lifetime assessment of stockpile materials. This report is an accumulation of historical publication on the DC745U material and their findings. It is the intention that the B61 LEP program uses this collection of data to further develop their understanding and potential areas of study. DC745U is a commercially available silicone elastomer consisting of dimethyl, methyl-phenyl, and methyl-vinyl siloxane repeat units. Originally, this material was manufactured by Dow Corning as Silastic{reg_sign} DC745U at their manufacturing facility in Kendallville, IN. Recently, Dow Corning shifted this material to the Xiameter{reg_sign} brand product line. Currently, DC745U is available through Xiameter{reg_sign} or Dow Corning's distributor R. D. Abbott Company. DC745U is cured using 0.5 wt% vinyl-specific peroxide curing agent known as Luperox 101 or Varox DBPH-50. This silicone elastomer is used in numerous parts, including two major components (outer pressure pads and aft cap support) in the W80 and as pressure pads on the B61. DC745U is a proprietary formulation, thus Dow Corning provides limited information on its composition and properties. Based on past experience with Dow Corning, DC745U is at risk of formulation changes without notification to the costumer. A formulation change for DC745U may have a significant impact because the network structure is a key variable in determining material properties. The purpose of this report is to provide an overview of historical DC745U studies and identify gaps that need to be addressed in future work. Some of the previous studies include the following: 1. Spectroscopic characterization of raw gum stock. 2. Spectroscopic, thermal, and mechanical studies on cured DC745U. 3. Nuclear Magnetic Resonance (NMR) and solvent swelling studies on DC745U with different crosslink densities. 4. NMR, solvent swelling, thermal, and mechanical studies on thermally aged DC745U. 5. NMR, solvent swelling, thermal, and mechanical studies on radiolytically aged DC745U. Each area is reviewed and further work is suggested to improve our understanding of DC745U for systems engineering, surveillance, aging assessments, and lifetime assessment.

Ortiz-Acosta, Denisse [Los Alamos National Laboratory

2012-07-30T23:59:59.000Z

264

Development of a Novel Bi-Directional Isolated Multiple-Input DC-DC Converter  

DOE Green Energy (OSTI)

There is vital need for a compact, lightweight, and efficient energy-storage system that is both affordable and has an acceptable cycle life for the large-scale production of electric vehicles (EVs) and hybrid electric vehicles (HEVs). Most of the current research employs a battery-storage unit (BU) combined with a fuel cell (FC) stack in order to achieve the operating voltage-current point of maximum efficiency for the FC system. A system block diagram is shown in Fig.1.1. In such a conventional arrangement, the battery is sized to deliver the difference between the energy required by the traction drive and the energy supplied by the FC system. Energy requirements can increase depending on the drive cycle over which the vehicle is expected to operate. Peak-power transients result in an increase of losses and elevated temperatures which result in a decrease in the lifetime of the battery. This research will propose a novel two-input direct current (dc) dc to dc converter to interface an additional energy-storage element, an ultracapacitor (UC), which is shown in Fig.1.2. It will assist the battery during transients to reduce the peak-power requirements of the battery.

Li, H.

2005-10-24T23:59:59.000Z

265

Definition: DC Resistivity Survey (Dipole-Dipole Array) | Open Energy  

Open Energy Info (EERE)

DC Resistivity Survey (Dipole-Dipole Array) DC Resistivity Survey (Dipole-Dipole Array) Jump to: navigation, search Dictionary.png DC Resistivity Survey (Dipole-Dipole Array) The Dipole-Dipole array is a type of electrode configuration for a Direct-Current Resistivity Survey and is defined by its electrode array geometry.[1] View on Wikipedia Wikipedia Definition References ↑ http://appliedgeophysics.berkeley.edu/dc/EM46.pdf Ret LikeLike UnlikeLike You like this.Sign Up to see what your friends like. rieved from "http://en.openei.org/w/index.php?title=Definition:DC_Resistivity_Survey_(Dipole-Dipole_Array)&oldid=596974" Category: Definitions What links here Related changes Special pages Printable version Permanent link Browse properties 429 Throttled (bot load) Error 429 Throttled (bot load) Throttled (bot load)

266

Energy Recovery from High-frequency Clocks using DC-DC Converters M. Alimadadi, S. Sheikhaei, G. Lemieux, S. Mirabbasi, W. Dunford, P. Palmer.  

E-Print Network (OSTI)

Energy Recovery from High-frequency Clocks using DC-DC Converters M. Alimadadi, S. Sheikhaei, G Power Supply) PWM Controller PWM clock Rload Figure 1. Recycling clock energy with a DC-DC converter a significant amount of energy to distribute a multi-GHz clock. By discharging the clock network to ground every

Lemieux, Guy

267

AlGaAs/GaAs nano-hetero-epitaxy on a patterned GaAs substrate by MBE  

SciTech Connect

An AlGaAs/GaAs resonant tunneling diode (RTD) with submicron size was fabricated on {l_brace}111{r_brace} oblique facets of GaAs with selective MBE. The method is based on the fact that a certain facet structure is formed on a patterned substrate in selective MBE because the growth rate depends strongly on the facet structure. The fabrication of a double-barrier structure was attempted on a {l_brace}111{r_brace}B facet. The current-voltage characteristics of the sample showed negative differential resistance at 77K demonstrating that we have achieved an RTD on a submicron facet.

Nishiwaki, T.; Yamaguchi, M.; Sawaki, N. [Department of Electronics, Nagoya University, Chikusa-ku, Nagoya, 464-8603 (Japan)

2007-04-10T23:59:59.000Z

268

Optimizing Energy Savings from Direct-DC in U.S. Residential Buildings  

E-Print Network (OSTI)

Torchiere Source: [6]. Energy AC-DC Savings Conv.Effand fans unchanged Energy AC-DC Savings Conv.Eff Solar WaterFigure 10. Appliances energy savings versus direct-DC energy

Garbesi, Karina

2012-01-01T23:59:59.000Z

269

Application to Export Electric Energy OE Docket No. EA-351 DC...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1 DC Energy Dakota, LLC Application to Export Electric Energy OE Docket No. EA-351 DC Energy Dakota, LLC Application from DC Energy Dakota, LLC to export electric energy to Canada...

270

News From the D.C. Office: Energy-Saving Office Equipment, Part...  

NLE Websites -- All DOE Office Websites (Extended Search)

Aerial view of Washington D.C. News From the D.C. Office Energy-Saving Office Equipment, Part 1 More on the DC Office efficiency up-grade: Lighting, Office Equipment: Part 2...

271

Optimizing Energy Savings from Direct-DC in U.S. Residential Buildings  

E-Print Network (OSTI)

brushless DC permanent magnet motor EV electric vehicle BtuBrushless DC permanent magnet motors can save 5-15% of theBrushless DC permanent magnet motor; VSD: Variable-speed

Garbesi, Karina

2012-01-01T23:59:59.000Z

272

Efficient Switches for Solar Power Conversion: Four Quadrant GaN Switch Enabled Three Phase Grid-Tied Microinverters  

Science Conference Proceedings (OSTI)

Solar ADEPT Project: Transphorm is developing power switches for new types of inverters that improve the efficiency and reliability of converting energy from solar panels into useable electricity for the grid. Transistors act as fast switches and control the electrical energy that flows in an electrical circuit. Turning a transistor off opens the circuit and stops the flow of electrical current; turning it on closes the circuit and allows electrical current to flow. In this way a transistor can be used to convert DC from a solar panel into AC for use in a home. Transphorms transistors will enable a single semiconductor device to switch electrical currents at high-voltage in both directionsmaking the inverter more compact and reliable. Transphorm is using Gallium Nitride (GaN) as a semiconductor material in its transistors instead of silicon, which is used in most conventional transistors, because GaN transistors have lower losses at higher voltages and switching frequencies.

None

2012-02-13T23:59:59.000Z

273

Cl{sub 2}-based dry etching of the AlGaInN system in inductively coupled plasmas  

DOE Green Energy (OSTI)

Cl{sub 2}-based Inductively Coupled Plasmas with low additional dc self- biases(-100V) produce convenient etch rates(500-1500 A /min) for GaN, AlN, InN, InAlN and InGaN. A systematic study of the effects of additive gas(Ar, N{sub 2}, H{sub 2}), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent Cl{sub 2} in the discharge for all three mixtures, and to have an increase(decrease) in etch rate with source power(pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained.

Cho, Hyun; Vartuli, C.B.; Abernathy, C.R.; Donovan, S.M.; Pearton, S.J. [Florida Univ., Gainesville, FL (United States). Dept. of Materials Science and Engineering; Shul, R.J.; Han, J. [Sandia National Labs., NM (United States)

1997-12-01T23:59:59.000Z

274

Accelerated aging of GaAs concentrator solar cells  

DOE Green Energy (OSTI)

An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

Gregory, P.E.

1982-04-01T23:59:59.000Z

275

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence  

E-Print Network (OSTI)

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence October 1997; accepted for publication 5 January 1998 Recombination in single quantum well and multiquantum well InGaN/GaN structures is studied using time-resolved photoluminescence and pulsed

Bowers, John

276

Optical injection and coherent control of a ballistic charge current in GaAsAlGaAs quantum wells  

E-Print Network (OSTI)

Optical injection and coherent control of a ballistic charge current in GaAs?AlGaAs quantum wells of Hache´ et al.,2,3 but in this article we report injection into the plane of GaAs/AlGaAs quantum wells specific to quantum wells. Although we expect the underlying physics of injection and control of currents

Sipe,J. E.

277

Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting  

E-Print Network (OSTI)

of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Wetzel, Christian M.

278

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures  

E-Print Network (OSTI)

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode and GaInN/GaN heterostructures typically used for high efficiency light emitting diodes is of high materials for green, blue, and UV light emitting diodes (LED) [1-2]. It is known that huge piezoelectric

Wetzel, Christian M.

279

Analysis of Schottky gate electron tunneling in polarization induced AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

( gate=nickel)/(barrier=GaN/Al (y) Ga (1?y) N)/(buffer=GaN)/(substrate=SiC ) polarizationinduced high electron mobility transistors (PI-HEMTs) show promise for ultrahigh power microwave amplification. The polarization fields in these Ga-face

Lester F. Eastman

1999-01-01T23:59:59.000Z

280

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Counterrotating brushless dc permanent magnet motor  

DOE Patents (OSTI)

An brushless DC permanent magnet motor is provided for driving an autonomous underwater vehicle. In one embodiment, the motor comprises four substantially flat stators disposed in stacked relationship, with pairs of the stators being axially spaced and each of the stators comprising a tape-wound stator coil; and a first and second substantially flat rotors disposed between the spaced pairs of stators. Each of the rotors includes an annular array of permanent magnets embedded therein. A first shaft is connected to the first rotor and a second, concentric shaft is connected to the second rotor, and drive unit causes rotation of the two shafts in opposite directions. The second shaft comprises a hollow tube having a central bore therein in which the first shaft is disposed. Two different sets of bearings support the first and second shAfts. In another embodiment, the motor comprises two ironless stators and pairs and rotors mounted no opposite sides of the stators and driven by counterrotating shafts.

Hawsey, R.A.; Bailey, J.M.

1990-12-31T23:59:59.000Z

282

Counterrotating brushless dc permanent magnet motor  

DOE Patents (OSTI)

An brushless DC permanent magnet motor is provided for driving an autonomous underwater vehicle. In one embodiment, the motor comprises four substantially flat stators disposed in stacked relationship, with pairs of the stators being axially spaced and each of the stators comprising a tape-wound stator coil; and a first and second substantially flat rotors disposed between the spaced pairs of stators. Each of the rotors includes an annular array of permanent magnets embedded therein. A first shaft is connected to the first rotor and a second, concentric shaft is connected to the second rotor, and drive unit causes rotation of the two shafts in opposite directions. The second shaft comprises a hollow tube having a central bore therein in which the first shaft is disposed. Two different sets of bearings support the first and second shAfts. In another embodiment, the motor comprises two ironless stators and pairs and rotors mounted no opposite sides of the stators and driven by counterrotating shafts.

Hawsey, R.A.; Bailey, J.M.

1990-01-01T23:59:59.000Z

283

J1, MBE Growth of Metamorphic InGaP on GaAs and GaP for Wide ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

284

AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO2 dielectrics  

Science Conference Proceedings (OSTI)

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) based on InGaN/GaN multi-quantum-well (MQW) structure has been fabricated with SiO"2 dielectric deposited via photo-chemical vapor deposition (PHCVD) using a deuterium lamp ... Keywords: GaN, HEMT, MQW, Photo-chemical vapor deposition, SiO 2

Kai-Hsuan Lee; Ping-Chuan Chang; Shoou-Jinn Chang

2013-04-01T23:59:59.000Z

285

We Have a Winner - DC High School Regional Science Bowl Competition...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

We Have a Winner - DC High School Regional Science Bowl Competition Held Last Saturday We Have a Winner - DC High School Regional Science Bowl Competition Held Last Saturday...

286

DC Regional Middle School Science Bowl | U.S. DOE Office of Science...  

Office of Science (SC) Website

Washington DC Regions DC Regional Middle School Science Bowl National Science Bowl (NSB) NSB Home About High School Middle School Middle School Students Middle School Coaches...

287

Optimizing Energy Savings from Direct-DC in U.S. Residential Buildings  

E-Print Network (OSTI)

The Feasibility of Small-Scale Residential DC Distributionof a DC microgrid for residential houses. In Transmission &energy storage with PV for residential and commercial use.

Garbesi, Karina

2012-01-01T23:59:59.000Z

288

DC Resistivity Survey (Dipole-Dipole Array) | Open Energy Information  

Open Energy Info (EERE)

DC Resistivity Survey (Dipole-Dipole Array) DC Resistivity Survey (Dipole-Dipole Array) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Technique: DC Resistivity Survey (Dipole-Dipole Array) Details Activities (1) Areas (1) Regions (0) NEPA(0) Exploration Technique Information Exploration Group: Geophysical Techniques Exploration Sub Group: Electrical Techniques Parent Exploration Technique: Electrical Profiling Configurations Information Provided by Technique Lithology: Rock composition, mineral and clay content Stratigraphic/Structural: Detection of permeable pathways, fracture zones, faults Hydrological: Resistivity influenced by porosity, grain size distribution, permeability, fluid saturation, fluid type and phase state of the pore water Thermal: Resistivity influenced by temperature

289

DC Hazardous Waste Management (District of Columbia) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

DC Hazardous Waste Management (District of Columbia) DC Hazardous Waste Management (District of Columbia) DC Hazardous Waste Management (District of Columbia) < Back Eligibility Utility Fed. Government Commercial Agricultural Investor-Owned Utility State/Provincial Govt Industrial Construction Municipal/Public Utility Local Government Residential Installer/Contractor Rural Electric Cooperative Tribal Government Low-Income Residential Schools Retail Supplier Institutional Multi-Family Residential Systems Integrator Fuel Distributor Nonprofit General Public/Consumer Transportation Program Info State District of Columbia Program Type Environmental Regulations Provider District Department of the Environment This regulation regulates the generation, storage, transportation, treatment, and disposal of hazardous waste, and wherever feasible, reduces

290

Experimental power reactor dc generator energy storage study  

DOE Green Energy (OSTI)

This study covers the use of dc generators for meeting the Experimental Power Reactor Ohmic Heating Energy Storage Requirements. The dc generators satisfy these requirements which are the same as defined in WFPS-TME-038 which covered the use of ac generators and homopolar generators. The costs of the latter two systems have been revised to eliminate first-of-a-kind factors. The cost figures for dc generators indicate a need to develop larger machines in order to take advantage of the economy-of-scale that the large ac machines have. Each of the systems has its own favorable salient features on which to base a system selection.

Heck, F.M.; Smeltzer, G.S.; Myers, E.H.; Kilgore, L.

1978-08-25T23:59:59.000Z

291

Free carrier accumulation at cubic AlGaN/GaN heterojunctions  

Science Conference Proceedings (OSTI)

Cubic Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructures were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001) substrates. A profile of the electrostatic potential across the cubic-AlGaN/GaN heterojunction was obtained using electron holography in the transmission electron microscope. The experimental potential profile indicates that the unintentionally doped layers show n-type behavior and accumulation of free electrons at the interface with a density of 5.1 x 10{sup 11}/cm{sup 2}, about one order of magnitude less than in wurtzite AlGaN/GaN junctions. A combination of electron holography and cathodoluminescence measurements yields a conduction-to-valence band offset ratio of 5:1 for the cubic AlGaN/GaN interface, which also promotes the electron accumulation. Band diagram simulations show that the donor states in the AlGaN layer provide the positive charges that to a great extent balance the two-dimensional electron gas.

Wei, Q. Y.; Li, T.; Huang, J. Y.; Ponce, F. A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Tschumak, E.; Zado, A.; As, D. J. [Department of Physics, Universitaet Paderborn, D-33098 Paderborn (Germany)

2012-04-02T23:59:59.000Z

292

L1, Formation of Structural Defects in AlGaN/GaN High Electron ...  

Science Conference Proceedings (OSTI)

Transmission electron microscope (TEM) cross sectional image has shown that electrical degradation is closely related to structural damage in the GaN cap and ...

293

Plasma Damage in p-GaN  

SciTech Connect

The effect of Inductively Coupled Plasma H{sub 2} or Ar discharges on the breakdown voltage of p-GaN diodes was measured over a range of ion energies and fluxes. The main effect of plasma exposure is a decrease in net acceptor concentration to depths of 400-550{angstrom}. At high ion fluxes or energies there can be type conversion of the initially p-GaN surface. Post etch annealing at 900 C restores the initial conductivity.

Cao, X.A.; Dang, G.T.; Hickman, R.A.; Pearton, S.J.; Ren, F.; Shul, R.J.; Van Hove, J.M.; Zhang, A.P.; Zhang, L.

1999-06-30T23:59:59.000Z

294

GaTe semiconductor for radiation detection  

SciTech Connect

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

295

DOE - Office of Legacy Management -- National Bureau of Standards - DC 01  

Office of Legacy Management (LM)

Bureau of Standards - DC Bureau of Standards - DC 01 FUSRAP Considered Sites Site: NATIONAL BUREAU OF STANDARDS (DC.01) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Van Ness Street , Washington , D.C. DC.01-1 Evaluation Year: 1987 DC.01-2 DC.01-3 Site Operations: Performed quality analysis lab work for the MED during the 1940s; decontamination efforts were completed in 1952 and the building was demolished in 1976 DC.01-3 Site Disposition: Eliminated - Radiation levels Below criteria DC.01-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Radium DC.01-4 Radiological Survey(s): Yes DC.01-1 Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to NATIONAL BUREAU OF STANDARDS

296

Fault Detection and Isolation in Low-Voltage DC Distribution ...  

A University of Colorado research team led by Jae-Do Park has developed a fault detection and isolation scheme for a low-voltage DC-bus microgrid system, ...

297

DC Resistivity Survey (Schlumberger Array) At Coso Geothermal Area (1977) |  

Open Energy Info (EERE)

DC Resistivity Survey (Schlumberger Array) At Coso DC Resistivity Survey (Schlumberger Array) At Coso Geothermal Area (1977) Exploration Activity Details Location Coso Geothermal Area Exploration Technique DC Resistivity Survey (Schlumberger Array) Activity Date 1977 Usefulness not indicated DOE-funding Unknown Exploration Basis To investigate electrical properties of rocks associated with thermal phenomena of the Devil's Kitchen-Coso Hot Springs area Notes 18 USGS Schlumberger soundings and 6 Schlumberger soundings by Furgerson (1973) were plotted and automatically processed and interpreted References Jackson, D.B. ODonnell, J.E.; Gregory, D. I. (1 January 1977) Schlumberger soundings, audio-magnetotelluric soundings and telluric mapping in and around the Coso Range, California Retrieved from "http://en.openei.org/w/index.php?title=DC_Resistivity_Survey_(Schlumberger_Array)_At_Coso_Geothermal_Area_(1977)&oldid=591389

298

Washington DC Reliability Requirements and the Need to Operate Mirant's  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Washington DC Reliability Requirements and the Need to Operate Washington DC Reliability Requirements and the Need to Operate Mirant's Potomac River Generation Station to Support Local Area Reliability (Oak Ridge National Laboratory 2005) Washington DC Reliability Requirements and the Need to Operate Mirant's Potomac River Generation Station to Support Local Area Reliability (Oak Ridge National Laboratory 2005) Pursuant to Docket No. EO-05-01: Oak Ridge National Laboratory provided an analysis of the Mirant Potomac River Generation Station in 2005 and discussed the reliability requirements of the local area and the potential impacts on reliability of changing operation of the Potomac River Generating Station in this paper. Washington DC Reliability Requirements and the Need to Operate Mirant's Potomac River Generation Station to Support Local Area Reliability.pdf

299

Categorical Exclusion Determinations: Washington, D.C. | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Washington, D.C. Washington, D.C. Categorical Exclusion Determinations: Washington, D.C. Location Categorical Exclusion Determinations issued for actions in Washington, D.C. DOCUMENTS AVAILABLE FOR DOWNLOAD June 11, 2013 CX-010460: Categorical Exclusion Determination Novel Low Cost Environmentally Friendly Synthetic Approaches toward Core-Shell Structured Micro CX(s) Applied: B3.6 Date: 06/11/2013 Location(s): District of Columbia Offices(s): National Energy Technology Laboratory March 28, 2013 CX-010567: Categorical Exclusion Determination Lawrence Berkeley National Laboratory - Rapid Automated Modeling and Simulation of Existing Buildings for Energy Efficiency CX(s) Applied: B3.6 Date: 02/28/2013 Location(s): California, District of Columbia Offices(s): Advanced Research Projects Agency-Energy

300

Microsoft PowerPoint - NETL Morgantown, WV to Washington, DC...  

NLE Websites -- All DOE Office Websites (Extended Search)

Morgantown, WV Site to Washington, DC Headquarters 1. Take I-68 EAST toward CUMBERLAND, MD. 2 M t I 70 EASTUS 40 EUS 522 S E it EXIT 82AB t d HAGERSTOWN 2. Merge onto I-70 EAST...

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Microsoft PowerPoint - Washington, DC to NETL Pittsburgh Directions...  

NLE Websites -- All DOE Office Websites (Extended Search)

Pittsburgh, PA Site 1. Leave WASHINGTON, DC on I-270 NORTH. 2. Take the I-70 WEST exit toward HAGERSTOWN. Merge onto I-70 WEST. 3. At HANCOCK, MD exit RIGHT onto I-70 WEST I-76...

302

Microsoft PowerPoint - NETL Pittsburgh, PA to Washington, DC...  

NLE Websites -- All DOE Office Websites (Extended Search)

Washington, DC Headquarters 1. COCHRANS MILL RD. becomes BROWNSVILLE RD. 2. Stay STRAIGHT to go onto CURRY HOLLOW RDYELLOW BELT. 3 T k th PA 51 SOUTH t d CLAIRTON 3. Take the...

303

Local Economic Investment and Crime: Neighborhood Change in Washington, DC.  

E-Print Network (OSTI)

??The purpose of this analysis is to shed light on the relationship between large-scale economic investment and crime in Washington, DC neighborhood clusters (N=39) from (more)

Matsuda, Mauri

2009-01-01T23:59:59.000Z

304

EETD Researchers Contribute to Efficient DC-Power Data Center...  

NLE Websites -- All DOE Office Websites (Extended Search)

(Calit2) at UC San Diego is operating a set of servers in a campus data center on 380-volt DC (direct current) power. The new modular data center on campus has sensors and other...

305

Halbach array DC motor/generator - Energy Innovation Portal  

A new configuration of DC motor/generator is based on a Halbach array of permanent magnets. This motor does not use ferrous materials so that the only losses are ...

306

Production EVSE Fact Sheet: DC Fast Charger: Hasetec  

NLE Websites -- All DOE Office Websites (Extended Search)

38 x 69 x 21 Charge level DC Fast Charge Input voltage 480 VAC - 3 Phase Isolation Transformer 1 75 kVA Maximum input current 2 120 Amp Test Conditions Test date 10232012...

307

Properties of dc magnetron reactively sputtered TiN  

Science Conference Proceedings (OSTI)

Titanium nitride is of interest for IC fabrication because of its excellent performance as a metallic diffusion barrier. TiN films have been deposited in a batch sputtering system equipped with dc magnetron cathodes

Jim Stimmell

1986-01-01T23:59:59.000Z

308

Anisotropy and Forming Limit Diagram Comparison of DC and CC ...  

Science Conference Proceedings (OSTI)

Presentation Title, Anisotropy and Forming Limit Diagram Comparison of DC and CC ... Advanced Experimental Grid Pattern Techniques Coupled with FE-analysis ... Effect of Exploitation Overhead Power Lines on the Evolution of Mechanical...

309

Energy Storage for DC Fast Chargers Development and Demonstration...  

NLE Websites -- All DOE Office Websites (Extended Search)

INLEXT-13-28684 Energy Storage for DC Fast Chargers Development and Demonstration of Operating Protocols for 20-kWh and 200-kWh Field Sites Russell Newnham a Sally (Xiaolei) Sun a...

310

Radiofrequency amplifier based on a dc superconducting quantum interference device  

DOE Patents (OSTI)

A low noise radiofrequency amplifer, using a dc SQUID (superconducting quantum interference device) as the input amplifying element. The dc SQUID and an input coil are maintained at superconductivity temperatures in a superconducting shield, with the input coil inductively coupled to the superconducting ring of the dc SQUID. A radiofrequency signal from outside the shield is applied to the input coil, and an amplified radiofrequency signal is developed across the dc SQUID ring and transmitted to exteriorly of the shield. A power gain of 19.5 +- 0.5 dB has been achieved with a noise temperature of 1.0 +- 0.4 K at a frequency of 100 MHz.

Hilbert, C.; Martinis, J.M.; Clarke, J.

1984-04-27T23:59:59.000Z

311

Radiofrequency amplifier based on a dc superconducting quantum interference device  

DOE Patents (OSTI)

A low noise radiofrequency amplifier (10), using a dc SQUID (superconducting quantum interference device) as the input amplifying element. The dc SQUID (11) and an input coil (12) are maintained at superconductivity temperatures in a superconducting shield (13), with the input coil (12) inductively coupled to the superconducting ring (17) of the dc SQUID (11). A radiofrequency signal from outside the shield (13) is applied to the input coil (12), and an amplified radiofrequency signal is developed across the dc SQUID ring (17) and transmitted to exteriorly of the shield (13). A power gain of 19.5.+-.0.5 dB has been achieved with a noise temperature of 1.0.+-.0.4 K. at a frequency of 100 MHz.

Hilbert, Claude (Berkeley, CA); Martinis, John M. (Berkeley, CA); Clarke, John (Berkeley, CA)

1986-01-01T23:59:59.000Z

312

A Multiphase, Modular, Bidirectional, Triple-Voltage DC-DC Converter Power Systems  

Science Conference Proceedings (OSTI)

Electrical power systems in future hybrid and fuel cell vehicles may employ three voltage [14 V, 42 V, and high voltage (HV)] nets. These will be necessary to accommodate existing 14-V loads as well as efficiently handle new heavy loads at the 42-V net and a traction drive on the HV bus. A low-cost DC-DC converter was proposed for connecting the three voltage nets. It minimizes the number of switches and their associated gate driver components by using two half-bridges and a high-frequency transformer. Another salient feature is that the half bridge on the 42-V bus is also utilized to provide the 14-V bus by operating at duty ratios around an atypical value of 1/3. Moreover, it makes use of the parasitic capacitance of the switches and the transformer leakage inductance for soft switching. The use of half bridges makes the topology well suited for interleaved multiphase modular configurations as a means to increase the power level because the capacitor legs can be shared. This paper presents simulation and experimental results on an interleaved two-phase arrangement rated at 4.5 kW. Also discussed are the benefits of operating with an atypical duty ratio on the transformer and a preferred multiphase configuration to minimize capacitor ripple currents.

Su, Gui-Jia [ORNL; Tang, Lixin [ORNL

2008-01-01T23:59:59.000Z

313

DC Drive Ride-Through Technology Alternatives and Development  

Science Conference Proceedings (OSTI)

Adjustable speed drive (ASD) ride-through issues have caused increased concerns due to drive susceptibility to power disturbances and the costly results of process disruptions. Losses incurred due to DC drive trips can be avoided for critical production processes by employing ride-through alternatives. The purpose of this study is to determine the DC drive ride-through requirements of industrial customers and match those ride-through needs with possible solutions.

1998-12-19T23:59:59.000Z

314

Effect of DC Load Currents on Solid State Residential Meters  

Science Conference Proceedings (OSTI)

This report presents results of an extensive laboratory assessment of the impact of DC load currents (including half-wave rectified loads) on the metrological accuracy of residential solid state electricity meters. Sampled surveys were conducted to determine whether products producing DC currents are prevalent in residential premises. In addition, regulations and codes were studied to determine whether such products could naturally appear in the marketplace going forward. Two each of six brands of socket...

2011-12-22T23:59:59.000Z

315

Charge Lifetime Study of K2CsSb Photocathode Inside a JLAB DC High Voltage Gun  

SciTech Connect

Two photocathodes are frequently considered for generating high average current electron beams and/or beams with high brightness for current and future accelerator applications: GaAs:Cs and K2CsSb. Each photocathode has advantages and disadvantages, and need to demonstrate performance at 'production' accelerator facilities. To this end a K2CsSb photocathode was manufactured at Brookhaven National Lab and delivered to Jefferson Lab within a compact vacuum apparatus at pressure {approx} 5 x 10{sup -11} Torr. This photocathode was installed inside a dc high voltage photogun biased at voltages up to 200 kV, and illuminated with laser light at 440 or 532 nm, to generate beams up to 20 mA. Photocathode charge lifetime measurements indicate that under some conditions this cathode has exceptionally high charge lifetime, without measurable QE decay, even from the center of the photocathode where operation using GaAs photocathodes is precluded due to ion bombardment. These studies also suggest a complex QE decay mechanism likely related to chemistry and localized heating via the laser beam.

Mammei, R.; Rao, T.; Suleiman, R.; Poelker, M.; Smedley, J.; McCarter, J.L.

2011-10-01T23:59:59.000Z

316

Data:Eec988f9-dc0d-45ef-9789-a7781dc1934b | Open Energy Information  

Open Energy Info (EERE)

f9-dc0d-45ef-9789-a7781dc1934b f9-dc0d-45ef-9789-a7781dc1934b No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: El Paso Electric Co (New Mexico) Effective date: 2010/01/01 End date if known: Rate name: LGS (Large General Service Secondary) Sector: Commercial Description: This rate is available to all Customers for lighting,power, and heating service. All service will be taken at one point of delivery designated by the Company and at one of the Company's standard types of service. Service under this rate shall be limited to Customers whose expected monthly demand will exceed 800 kilowatts (kW).

317

From MC/DC to RC/DC: formalization and analysis of control-flow testing criteria  

Science Conference Proceedings (OSTI)

This chapter describes an approach to the formalization of existing criteria used in computer systems software testing and proposes a Reinforced Condition/Decision Coverage (RC/DC) criterion. This criterion has been developed from the well-known Modified ...

Sergiy A. Vilkomir; Jonathan P. Bowen

2008-01-01T23:59:59.000Z

318

Enhancement of AC/DC system performance by modulation of a proposed multiterminal DC system in the Southwestern U. S  

SciTech Connect

Modulation of power transmitted over a proposed multiterminal dc system to provide effective stability enhancement of a large ac system in the Southwestern U.S. is demonstrated in this paper. This proposed multiterminal dc system connecting the Phoenix, Mead and Los Angeles areas could be in parallel with an Extra High-Voltage (EHV) ac transmission network which could be operating at heavy loading conditions. Studies indicated that the utilization of large power and reactive power modulation on the dc system can provide transient stability enhancements and ac system damping. The resultant system damping can be significantly improved when compared to the performance of the ac system prior to the addition of the dc system. The application of modulation permits the release of converter station vars to support the ac system voltage and thus reduces the required capability of voltage support devices.

Lee, R.L.; Zollman, D.; Tang, J.F.; Hsu, J.C.; Hunt, J.R.; Burton, R.S.; Fletcher, D.E.

1986-01-01T23:59:59.000Z

319

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors  

E-Print Network (OSTI)

In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...

Lu, Bin

320

Simulation and Design Analysis of (A1Ga)As/GaAs MODFET Integrated Circuits  

Science Conference Proceedings (OSTI)

A new (AlGa)As/GaAs MODFET integrated circuit simulator is described. Our simulator is a customized version of SPICE incorporating the extended charge control model for MODFET's and the velocity saturation model for ungated FET's used as the load devices. ...

Choong H. Hyun; M. S. Shur; N. C. Cirillo

2006-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Nanocrystals cylindrical microcavities exploiting thin-walled InGaAs/GaAs microtubes  

Science Conference Proceedings (OSTI)

This paper relies on the design and fabrication of CdSe/ZnS core/shell colloidal nanocrystals (NCs) cylindrical microcavities for microphotonics applications. The fabrication technology relies on the release of the strain in strained heterostructures, ... Keywords: Colloidal nanocrystals, InGaAs/GaAs microtubes, Strained multilayer

C. Giordano; M. T. Todaro; A. Salhi; L. Martiradonna; I. Viola; A. Passab; L. Carbone; G. Gigli; A. Passaseo; M. De Vittorio

2007-05-01T23:59:59.000Z

322

Compound semiconductor field-effect transistors with improved dc and high frequency performance  

DOE Patents (OSTI)

A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is deposited. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region the Si-channel tail, but does not contribute substantially to the acceptor concentration in the region of the buried p-implant. As a result, the invention provides for improved field effect transistor devices with enhancement of both DC and high-frequency performance.

Zolper, J.C.; Sherwin, M.E.; Baca, A.G.

1995-12-31T23:59:59.000Z

323

Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance  

DOE Patents (OSTI)

A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is formed and a single anneal at moderate temperature is then performed. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions co-implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region of the Si-channel tail, but does not contribute substantially to the acceptor concentration in the buried p region. As a result, the invention provides for improved field effect semiconductor and related devices with enhancement of both DC and high-frequency performance.

Zolper, John C. (Vienna, VA); Sherwin, Marc E. (Rockville, MD); Baca, Albert G. (Albuquerque, NM)

2000-01-01T23:59:59.000Z

324

A Low-Cost Soft-Switched DC/DC Converter for Solid-Oxide Fuel Cells  

DOE Green Energy (OSTI)

A highly efficient DC to DC converter has been developed for low-voltage high-current solid oxide fuel cells. The newly developed 'V6' converter resembles what has been done in internal combustion engine that split into multiple cylinders to increase the output capacity without having to increase individual cell size and to smooth out the torque with interleaving operation. The development was started with topology overview to ensure that all the DC to DC converter circuits were included in the study. Efficiency models for different circuit topologies were established, and computer simulations were performed to determine the best candidate converter circuit. Through design optimization including topology selection, device selection, magnetic component design, thermal design, and digital controller design, a bench prototype rated 5-kW, with 20 to 50V input and 200/400V output was fabricated and tested. Efficiency goal of 97% was proven achievable through hardware experiment. This DC to DC converter was then modified in the later stage to converter 35 to 63 V input and 13.8 V output for automotive charging applications. The complete prototype was tested at Delphi with their solid oxide fuel cell test stand to verify the performance of the modified DC to DC converter. The output was tested up to 3-kW level, and the efficiency exceeded 97.5%. Multiple-phase interleaving operation design was proved to be reliable and ripple free at the output, which is desirable for the battery charging. Overall this is a very successful collaboration project between the SECA Core Technology Team and Industrial Team.

Jason Lai

2009-03-03T23:59:59.000Z

325

Two-dimensional electron gas in AlGaN/GaN heterostructures  

Science Conference Proceedings (OSTI)

The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system. {copyright} {ital 1997 American Vacuum Society.}

Li, J.Z.; Lin, J.Y.; Jiang, H.X. [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)] [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States); Khan, M.A.; Chen, Q. [APA Optics, Inc., Blaine, Minnesota 55449 (United States)] [APA Optics, Inc., Blaine, Minnesota 55449 (United States)

1997-07-01T23:59:59.000Z

326

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

DOE Green Energy (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

327

Study on Online Insulation Monitoring System for Working DC Power of Power Plants and Substations  

Science Conference Proceedings (OSTI)

The measurement of insulation resistance between DC power supply and ground is important in a DC operating power supply system. We proved a new model for measuring insulating resistance between ground and DC system. A lots of actual application shows ... Keywords: Insulation resistance, DC power system, Insulation monitor, Leakage current

Yunqing Liu; Xichao Wang

2010-06-01T23:59:59.000Z

328

Q&A: Kristen Psaki of WeatherizeDC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Q&A: Kristen Psaki of WeatherizeDC Q&A: Kristen Psaki of WeatherizeDC Q&A: Kristen Psaki of WeatherizeDC April 15, 2010 - 3:45pm Addthis Roughly 20 percent of carbon emissions come from inefficient homes. The DC Project says it has found a way to mitigate emissions and create jobs, a winning combination. WeatherizeDC is the non-profit's effort to use a community engagement model to help DC residents find green jobs and live a more energy efficient lifestyle. Energy Empowers recently spoke with DC Project co-founder and creative director Kristen Psaki about WeatherizeDC's approach to climate change. WeatherizeDC is a nonprofit community engagement program. What's the background of it, the story of how and why it was founded? The DC Project was founded over a year ago in January 2009.

329

Q&A: Kristen Psaki of WeatherizeDC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Q&A: Kristen Psaki of WeatherizeDC Q&A: Kristen Psaki of WeatherizeDC Q&A: Kristen Psaki of WeatherizeDC April 15, 2010 - 3:45pm Addthis Roughly 20 percent of carbon emissions come from inefficient homes. The DC Project says it has found a way to mitigate emissions and create jobs, a winning combination. WeatherizeDC is the non-profit's effort to use a community engagement model to help DC residents find green jobs and live a more energy efficient lifestyle. Energy Empowers recently spoke with DC Project co-founder and creative director Kristen Psaki about WeatherizeDC's approach to climate change. WeatherizeDC is a nonprofit community engagement program. What's the background of it, the story of how and why it was founded? The DC Project was founded over a year ago in January 2009.

330

A frequency domain model for 3 kV dc traction dc-side resonance identification  

SciTech Connect

Frequency-dependent effects in railway traction power systems arise from the impedance of substation and locomotive line filters and the traction line. Harmonic noise from traction drives and substations can excite resonances and produce overcurrent or overvoltage conditions at critical points in the network. In this paper, the harmonic feeding impedances of a 3 kV DC traction system seen from the rectifier substation, locomotive drive converter and pantograph terminals are presented. Several substation and locomotive filters are considered with a frequency-dependent traction line. Resonances attributed to the substation filter, locomotive filter and traction line are separate and distinct, the line introducing poles and zeros in the audio frequency (AF) range which vary in frequency and magnitude with locomotive position.

Hill, R.J. [Univ. of Bath (United Kingdom). School of Electronic and Electrical Engineering; Fracchia, M.; Pozzobon, P.; Sciutto, G. [Univ. degli Studi di Genova (Italy). Dipt. di Ingegneria Elettrica

1995-08-01T23:59:59.000Z

331

Randomized PWM for conductive EMI reduction in DC-DC choppers  

E-Print Network (OSTI)

In this paper, a comparative investigation of different random modulation schemes against the normal pulsewidth modulation (PWM) for the DC motor drive with step-down chopper (buck) and half-bridge configuration is presented. For this purpose, an experimental setup with DSP2 board has been developed. The board consists of the signal processor TMS320C32 which is suitable for verifying the different modulations strategies. The effectiveness of randomization on spreading the dominating frequencies that normally exist in constantfrequency PWM schemes is evaluated by the power spectral density (PSD) estimations in the low-frequency range. Finally, one universal demo board with two power converters configuration (driven by the micro controller PICF16F876) has been used in EMI measurements to comply with the CISPR 25 (or EN 55025) regulations. 1

Franc Mihali?; Dejan Kos

2005-01-01T23:59:59.000Z

332

Multi-port DC-DC Power Converter for Renewable Energy Application  

E-Print Network (OSTI)

In recent years, there has been lots of emphasis put on the development of renewable energy. While considerable improvement on renewable energy has been made, there are some inherent limitations for these renewable energies. For example, for solar and wind power, there is an intermittent nature. For the fuel cell, the dynamics of electro-chemical reaction is quite slow compared to the electric load. This will not be acceptable for modern electric application, which requires constant voltage of constant frequency. This work proposed and evaluated a new power circuit that can deal with the problem of the intermittent nature and slow response of the renewable energy. The proposed circuit integrates different renewable energy sources as well as energy storage. By integrating renewable energy sources with statistical tendency to compensate each other, the effect of the intermittent nature can be greatly reduced. This integration will increase the reliability and utilization of the overall system. Moreover, the integration of energy storage solves the problem of the slow response of renewable energy. It can provide the extra energy required by load or absorb the excessive energy provided by the energy sources, greatly improving the dynamics of overall system. To better understand the proposed circuit, "Dual Active Bridge" and "Triple Active Bridge" were reviewed first. The operation principles and the modeling were presented. Analysis and design of the overall system were discussed. Controller design and stability issues were investigated. Furthermore, the function of the central controller was explained. In the end, different simulations were made and discussed. Results from the simulations showed that the proposed multi-port DC-DC power converter had satisfactory performance under different scenarios encountered in practical renewable energy application. The proposed circuit is an effective solution to the problem due to the intermittent nature and slow response of the renewable energy.

Chou, Hung-Ming

2009-08-01T23:59:59.000Z

333

MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED  

Science Conference Proceedings (OSTI)

We have grown 2DEG AlGaN/GaN heterostructures by molecular beam epitaxy (MBE) with electron mobilities up to 21500 cm{sup 2}V{sup -1}s{sup -1} at 2 K. In-situ RHEED was applied to optimize different aspects of Ga-rich growth. This paper gives a compact overview of the experimental key aspects that significantly affect the low temperature electron mobility in AlGaN/GaN heterostructures. Growth at the transition towards Ga droplet formation produced the best results. A quantitative analysis of the magnetoresistance confirmes scattering at dislocations as the dominant scattering process at low temperature.

Broxtermann, D.; Sivis, M.; Malindretos, J.; Rizzi, A. [IV. physikalisches Institut, Georg-August-Universitaet Goettingen (Germany)

2012-03-15T23:59:59.000Z

334

Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures  

Science Conference Proceedings (OSTI)

Double pulse doped ({delta}-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm{sup 2}/(V s) at sheet electron densities of 3.00 x 10{sup 12} and 3.36 x 10{sup 12} cm{sup -2}, respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A. [Russian Academy of Sciences, St. Petersburg Physics and Technology Center for Research and Education (Russian Federation)

2010-07-15T23:59:59.000Z

335

Panel: Microgrid Research and Field Testing IEEE PES General Meeting, 24-28 June 2007, Tampa, FL 1 In general, a microgrid can operate in both the grid-connected  

E-Print Network (OSTI)

Panel: Microgrid Research and Field Testing IEEE PES General Meeting, 24-28 June 2007, Tampa, FL 1 Abstract In general, a microgrid can operate in both the grid-connected mode and the islanded mode where the microgrid is interfaced to the main power system by a fast semiconductor switch called static switch, (SS

336

Tariff-based analysis of commercial building electricity prices  

E-Print Network (OSTI)

the Wholesale Market Edison Electric Institute, ElectricCo Southern California Edison Co State NC FL FL GA GA GA WVCode Company Name Boston Edison Co Central Vermont Pub Serv

Coughlin, Katie M.; Bolduc, Chris A.; Rosenquist, Greg J.; Van Buskirk, Robert D.; McMahon, James E.

2008-01-01T23:59:59.000Z

337

AC versus DC distribution systems- Did we get it right?  

DOE Green Energy (OSTI)

We presently enjoy a predominantly ac electrical distribution system, the engineering basis for which was designed over 100 years ago. While ac distribution systems have served us well, we should periodically pause to assess what opportunities we have accepted or been denied by the overwhelming predominance of ac electrical power distribution systems. What opportunities could be obtained by engineering dc distribution into at least portions of our present system? What advantages of the present ac distribution system should be recognized and protected? This paper will focus on distribution within premise and low-voltage distribution systems. Specifically, we will address the conversion efficiency costs of adopting various premise ac and dc distribution system topologies. According to a simple predictive model formulated in this paper, premise residential dc distribution will incur unfavorable total conversion efficiency compared with existing ac premise distribution. However, if a residence is supplied by a fuel cell or another dc generator, the total conversion efficiency within a residential dc distribution system could be similar to, or even better than, that for ac distribution.

Hammerstrom, Donald J.

2007-06-28T23:59:59.000Z

338

GaN Nanopore Arrays: Fabrication and Characterization  

E-Print Network (OSTI)

GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...

Wang, Yadong

339

GA-AL-SC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

340

Magnetoelastic Coupling in NiMnGa Ferromagnetic Shape ...  

Science Conference Proceedings (OSTI)

... Magnetoelastic Coupling in NiMnGa Ferromagnetic Shape Memory Alloys. Peng Zhao (Dept. of Materials Science and ...

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

Chung, Jinwook W. (Jinwook Will)

2008-01-01T23:59:59.000Z

342

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

We have investigated the surface morphology of electrically stressed AlGaN/GaN high electron mobility transistors using atomic force microscopy and scanning electron microscopy after removing the gate metallization by ...

Makaram, Prashanth

343

Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment  

E-Print Network (OSTI)

Enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are highly desirable for power and digital electronic circuits. Several technologies have been demonstrated in the last few years to fabricate ...

Palacios, Tomas

344

Argonne TTRDC - TTR Goes to D.C.  

NLE Websites -- All DOE Office Websites (Extended Search)

Argonne's Through-the-Road Hybrid goes to Washington, D.C., Auto Show Argonne's Through-the-Road Hybrid goes to Washington, D.C., Auto Show Argonne's Through the Road Vehicle Argonne's Through-the-Road Hybrid Vehicle Argonne's Through-the-Road hybrid vehicle (TTR) will be on display at the Washington Auto Show at Walter E. Washington Convention Center, February 4-8, 2009, in Washington, D.C. The TTR will be in the combined U.S. Department of Energy, Environmental Protection Agency, and Department of Transportation exhibit booth that features advanced vehicle technologies that are safe, clean, and efficient. Due to power-split limitations, no plug-in hybrid electric vehicle (PHEV) exists that can complete an Urban Dynamometer Driving Schedule (UDDS) cycle without starting the engine. Argonne created the TTR, an in-house PHEV development platform with an open

345

DOE Solar Decathlon: News Blog » Team Capitol DC  

NLE Websites -- All DOE Office Websites (Extended Search)

Capitol DC Capitol DC Below you will find Solar Decathlon news from the Team Capitol DC archive, sorted by date. Hangout With Solar Decathlon 2013 Teams on Sept. 18! Wednesday, September 11, 2013 By Rebecca Matulka Editor's Note: This entry has been cross-posted from DOE's Energy Blog. Photo of a Solar Decathlon house at night. Superimposed is the following text: "Solar Decathlon 2013: The Path to a Brighter Future. Energy.gov/live. Wednesday, Sept. 18, at p.m. ET. #askSD." Mark your calendars for a Google+ Hangout on Solar Decathlon 2013: The Path to a Brighter Future on Wednesday, Sept. 18, at 2 p.m. ET. For more than 10 years, the U.S. Department of Energy Solar Decathlon has been preparing the next wave of energy leaders-providing hands-on experience in designing and building energy-efficient, solar-powered

346

2012 Race to DC | ENERGY STAR Buildings & Plants  

NLE Websites -- All DOE Office Websites (Extended Search)

12 Race to DC 12 Race to DC Secondary menu About us Press room Contact Us Portfolio Manager Login Facility owners and managers Existing buildings Commercial new construction Industrial energy management Small business Service providers Service and product providers Verify applications for ENERGY STAR certification Design commercial buildings Energy efficiency program administrators Commercial and industrial program sponsors Associations State and local governments Federal agencies Tools and resources Training In this section Why you should design to earn the ENERGY STAR Follow EPA's step-by-step process ENERGY STAR Challenge for Architects 2013 Race to Denver 2012 Race to DC 2011 Race to New Orleans 2010 Race to Miami 2009 Race to San Francisco 2008 Race to Boston 2007 Race to San Antonio

347

SAIL Venture Partners (Washington DC) | Open Energy Information  

Open Energy Info (EERE)

DC) DC) Name SAIL Venture Partners (Washington DC) Address 2900 S. Quincy St, Suite 375 Place Arlington, Virginia Zip 22206 Product Venture capital fund focusing on clean energy Year founded 2002 Phone number (703) 379-2713 Website http://www.sailvc.com/ Coordinates 38.839975°, -77.087781° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":38.839975,"lon":-77.087781,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

348

NREL: Energy Analysis - Washington D.C. Office Staff  

NLE Websites -- All DOE Office Websites (Extended Search)

Washington D.C. Office Washington D.C. Office The following SEAC staff are based in our Washington D.C. Office. They support a variety of programs and activities, and often are the liaison between the U.S. Department of Energy and staff based in Golden, Colorado. Team Lead: Margaret Mann (Golden) Administrative Support: JoAnn Weaver (Golden) Thomas Jenkin Austin Brown David J. Feldman Tom Schneider Robert Margolis Kathleen Nawaz Monisha Shah Photo of Austin Brown. Austin Brown Senior Analyst (Strategic Planning) Areas of expertise Crosscutting low-carbon strategies Clean transportation technologies and policies Primary research interests Clean energy research portfolio planning Energy and society Sustainable transportation systems More information on Austin Brown Photo of David J. Feldman

349

Energy Department Completes Cool Roof Installation on DC Headquarters  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Completes Cool Roof Installation on DC Completes Cool Roof Installation on DC Headquarters Building to Save Money by Saving Energy Energy Department Completes Cool Roof Installation on DC Headquarters Building to Save Money by Saving Energy December 14, 2010 - 12:00am Addthis Washington - Secretary Steven Chu today announced the completion of a new cool roof installation on the Department of Energy's Headquarters West Building. There was no incremental cost to adding the cool roof as part of the roof replacement project and it will save taxpayers $2,000 every year in building energy costs. Cool roofs use lighter-colored roofing surfaces or special coatings to reflect more of the sun's heat, helping improve building efficiency, reduce cooling costs and offset carbon emissions. The cool roof and increased insulation at the facility were

350

News From the D.C. Office: Efficient Office Equipment  

NLE Websites -- All DOE Office Websites (Extended Search)

3 Aerial view of Washington D.C. 3 Aerial view of Washington D.C. News From the D.C. Office Efficient Office Equipment: Update and a Look Ahead An extended version of this article is available here. We are now well aware of the large amount of energy consumed by "plug-in loads" such as personal computers (PCs) and other office electronics. Office equipment is often cited as the fastest-growing end-use of electricity in the fastest-growing sector of demand (commercial buildings). According to Dataquest figures, world growth of PCs will average 14 to 15 percent per year through 1999. Only ten years ago, office equipment was not even part of the "map" of non-residential energy end-uses. There were virtually no data on office equipment energy use, nor an awareness of the

351

GaN: Defect and Device Issues  

SciTech Connect

The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

1998-11-09T23:59:59.000Z

352

Fabrication and characterization of GaN junction field effect transistors  

SciTech Connect

Junction field effect transistors (JFET) were fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition. The DC and microwave characteristics, as well as the high temperature performance of the devices were studied. These devices exhibited excellent pinch-off and a breakdown voltage that agreed with theoretical predictions. An extrinsic transconductance (g{sub m}) of 48 mS/mm was obtained with a maximum drain current (I{sub D}) of 270 mA/mm. The microwave measurement showed an f{sub T} of 6 GHz and an f{sub max} of 12 GHz. Both the I{sub D} and the g{sub m} were found to decrease with increasing temperature, possibly due to lower electron mobility at elevated temperatures. These JFETs exhibited a significant current reduction after a high drain bias was applied, which was attributed to a partially depleted channel caused by trapped electrons in the semi-insulating GaN buffer layer.

Zhang, L.; Lester, L.F.; Baca, A.G.; Shul, R.J.; Chang, P.C.; Willison, C.L.; Mishra, U.K.; Denbaars, S.P.; Zolper, J.C.

2000-01-11T23:59:59.000Z

353

Heat load of a P-doped GaAs photocathode in SRF electron gun  

Science Conference Proceedings (OSTI)

Many efforts were made over the last decades to develop a better polarized electron source for the high energy physics. Several laboratories operate DC guns with the Gallium-Arsenide photo-cathode, which yield a highly polarized electron beam. However, the beam's emittance might well be improved using a Superconducting RF electron gun, which delivers beams of higher brightness than DC guns does, because the field gradient at the cathode is higher. SRF guns with metal cathodes and CsTe cathodes have been tested successfully. To produce polarized electrons, a Gallium-Arsenide photo-cathode must be used: an experiment to do so in a superconducting RF gun is under way at BNL. Since the cathode will be normal conducting, the problem about the heat load stemming from the cathode arises. We present our measurements of the electrical resistance of GaAs at cryogenic temperatures, a prediction of the heat load and the verification by measuring the quality factor of the gun with and without cathode.

Wang, E.; Ben-Zvi, I.; Kewisch, J.; Burrill, A.; Rao, T.; Wu, Q.; Jain, A.; Gupta, R.; Holmes, D.

2010-05-23T23:59:59.000Z

354

Data:B5ebf44c-eb8c-42d6-9fb5-703a79d2e3dc | Open Energy Information  

Open Energy Info (EERE)

ebf44c-eb8c-42d6-9fb5-703a79d2e3dc ebf44c-eb8c-42d6-9fb5-703a79d2e3dc No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Cobb Electric Membership Corp Effective date: 2006/01/01 End date if known: Rate name: Outdoor Lighting Overhead Service MH 400 W FL Pole Contribution Not Paid Sector: Lighting Description: Pole Contributions Wood 30' $246.00 Wood 35' $297.00 Wood 40' $382.00 Wood 45' $424.00 Source or reference: https://www.cobbemc.com/~/media/Files/CEMC/PDFs/2012%20PDF/233%20Lighting%20Rates%202012.pdf Source Parent: Comments Applicability Demand (kW) Minimum (kW): Maximum (kW): History (months):

355

Nuclear magnetic resonance experiments with dc SQUID amplifiers  

Science Conference Proceedings (OSTI)

The development and fabrication of dc SQUIDs (Superconducting QUantum Interference Devices) with Nb/Al{sub 2}O{sub 3}/Nb Josephson junctions is described. A theory of the dc SQUID as a radio-frequency amplifier is presented, with an optimization strategy that accounts for the loading and noise contributions of the postamplifier and maximizes the signal-to-noise ratio of the total system. The high sensitivity of the dc SQUID is extended to high field NMR. A dc SQUID is used as a tuned radio-frequency amplifier to detect pulsed nuclear magnetic resonance at 32 MHz from a metal film in a 3.5 Tesla static field. A total system noise temperature of 11 K has been achieved, at a bath temperature of 4.2 K. The minimum number of nuclear Bohr magnetons observable from a free precession signal after a single pulse is about 2 {times} 10{sup 17} in a bandwidth of 25 kHz. In a separate experiment, a dc SQUID is used as a rf amplifier in a NQR experiment to observe a new resonance response mechanism. The net electric polarization of a NaClO{sub 3} crystal due to the precessing electric quadrupole moments of the Cl nuclei is detected at 30 MHz. The sensitivity of NMR and NQR spectrometers using dc SQUID amplifiers is compared to the sensitivity of spectrometers using conventional rf amplifiers. A SQUID-based spectrometer has a voltage sensitivity which is comparable to the best achieved by a FET-based spectrometer, at these temperatures and operating frequencies.

Heaney, M.B. (California Univ., Berkeley, CA (USA). Dept. of Physics Lawrence Berkeley Lab., CA (USA))

1990-11-01T23:59:59.000Z

356

Thermoelectric properties and impedance spectroscopy of polycrystalline samples of the beta-gallia rutile intergrowth, (Ga,In){sub 4}(Sn,Ti){sub 5}O{sub 16}  

Science Conference Proceedings (OSTI)

Polycrystalline samples of Ga{sub 3}In(Sn{sub 1-y}Ti{sub y}){sub 5}O{sub 16}, y{thermoelectric properties and electrical impedance. Using diffuse reflectance data and assuming a direct band gap, the band gap of the material ranges from 3.58 eV for y=0 to 3.74 eV for y=0.2. The dc conductivity decreased with increasing Ti content and was thermally activated, ranging from {thermoelectric materials. A comparison of dc conductivity and impedance data indicated a substantial ionic contribution for samples containing titanium. - Graphical abstract: The thermoelectric properties of polycrystalline Ga{sub 3}In(Sn{sub 1-y}Ti{sub y}){sub 5}O{sub 16}, y{materials are broad-band n-type semiconductors with non-negligible ionic conduction for samples prepared with y>0. The thermoelectric figure of merit is much lower than desired for practical thermoelectric devices. Highlights: Black-Right-Pointing-Pointer Ga{sub 3}In(Sn{sub 1-y}Ti{sub y}){sub 5}O{sub 16}, y{thermoelectric figure of merit for Ga{sub 3}In(Sn{sub 1-y}Ti{sub y}){sub 5}O{sub 16} is lower than desired for practical thermoelectric devices.

Grover, Jeffrey; Arrasmith, Steven [Alfred University, Kazuo Inamori School of Engineering, 2 Pine Street, Alfred, NY 14802 (United States); Edwards, Doreen D., E-mail: dedwards@alfred.edu [Alfred University, Kazuo Inamori School of Engineering, 2 Pine Street, Alfred, NY 14802 (United States)

2012-07-15T23:59:59.000Z

357

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+  

E-Print Network (OSTI)

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

McKittrick, Joanna

358

High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs  

DOE Patents (OSTI)

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

Shimer, Daniel W. (Danville, CA); Lange, Arnold C. (Livermore, CA)

1995-01-01T23:59:59.000Z

359

High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs  

DOE Patents (OSTI)

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

Shimer, D.W.; Lange, A.C.

1995-05-23T23:59:59.000Z

360

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network (OSTI)

Fainman, "Influence of chlorine on etched sidewalls inFainman, Influence of chlorine on etched sidewalls inthe RIBE of GaAs with chlorine (Cl 2 ), ion beam sputtering

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

JJ2, Optical Polarization of Non-Polar GaInN/GaN LEDs  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

362

K1, Molecular Beam Epitaxy of Catalyst-Free InGaN/GaN Nanowires ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

363

Active dc filter for HVDC system--A test installation in the Konti-Skan DC link at Lindome converter station  

Science Conference Proceedings (OSTI)

The purpose of introducing active dc filters is to meet the more and more stringent requirement from power utilities on limiting telephone interference caused by harmonic currents from HVdc transmission lines, without unnecessarily increasing the cost of HVdc stations. An active dc filter installed in the Konti-Skan HVdc link is described. The active dc filter is connected at the bottom of an existing passive dc filter at the Lindome station. The active dc filter includes optic harmonic current measuring unit, control system, protection and supervision system, PWM power amplifier, high-frequency transformer, surge arrester, and coupling apparatuses. The active dc filter has small physical size and occupies small ground area. The performance of the active dc filter for eliminating the disturbing harmonics is excellent. To achieve comparable results by passive filters would require something like ten times more high voltage equipment.

Zhang, Wenyan; Asplund, G. (ABB Power Systems, Ludvika (Sweden). HVDC Division); Aberg, A. (ABB Corporate Research, Lund (Sweden). Dept. of Man-Machine Communication); Jonsson, U. (Svenska Kraftnaet, Vaellingby (Sweden)); Loeoef, O. (Vattenfall AB, Trollhaettan (Sweden). Region Vaestsverige)

1993-07-01T23:59:59.000Z

364

Performance Evaluation of a Multi-Port DC-DC Current Source Converter for High Power Applications  

E-Print Network (OSTI)

With the ever-growing developments of sustainable energy sources such as fuel cells, photovoltaics, and other distributed generation, the need for a reliable power conversion system that interfaces these sources is in great demand. In order to provide the highest degree of flexibility in a truly distributed network, it is desired to not only interface multiple sources, but to also interface multiple loads. Modern multi-port converters use high frequency transformers to deliver the different power levels, which add to the size and complexity of the system. The different topological variations of the proposed multi-port dc-dc converter have the potential to solve these problems. This thesis proposes a unique dc-dc current source converter for multi-port power conversion. The presented work will explain the proposed multi-port dc-dc converter's operating characteristics, control algorithms, design and a proof of application. The converter will be evaluated to determine its functionality and applicability. Also, it will be shown that our converter has advantages over modern multi-port converters in its ease of scalability from kW to MW, low cost, high power density and adaption to countless combinations of multiple sources. Finally we will present modeling and simulation of the proposed converter using the PSIM software. This research will show that this new converter topology is unstable without feedback control. If the operating point is moved, one of the source ports of the multiport converter becomes unstable and dies off supplying very little or no power to the load while the remaining source port supplies all of the power the load demands. In order to prevent this and add stability to the converter a simple yet unique control method was implemented. This control method allowed for the load power demanded to be shared between the two sources as well as regulate the load voltage about its desired value.

Yancey, Billy Ferrall

2010-05-01T23:59:59.000Z

365

Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes  

E-Print Network (OSTI)

We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

Cornelius S. Bausch; Aune Koitme; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

2013-05-06T23:59:59.000Z

366

Recent progress in InGaAsSb/GaSb TPV devices  

DOE Green Energy (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

367

GaNPAs Solar Cells Lattice-Matched To GaP: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

Geisz, J. F.; Friedman, D. J.; Kurtz, S.

2002-05-01T23:59:59.000Z

368

GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP  

Science Conference Proceedings (OSTI)

We report on the epitaxial growth of an AlSb/InAs heterostructure on a (001) GaP substrate. We investigate the conditions for the most efficient relaxation of GaSb islands on GaP. In particular, we show that the GaP surface treatment and the growth temperature are crucial for the formation of a two-dimensional periodic array of 90 deg. misfit dislocations at the episubstrate interface. With this relaxation process, an AlSb/InAs heterostructure exhibiting a room temperature mobility of 25 500 cm{sup 2} V{sup -1} s{sup -1} on GaP is demonstrated. This result paves the way to the integration of Sb-based devices on Si substrates through the use of GaP/Si templates.

El Kazzi, S.; Desplanque, L.; Coinon, C.; Wallart, X. [Institut d'Electronique, de Microelectronique, et de Nanotechnologie, UMR-CNRS 8520, BP 60069, 59652 Villeneuve d'Ascq Cedex (France); Wang, Y.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6, Boulevard du Marechal Juin, 14050 Caen Cedex (France)

2010-11-08T23:59:59.000Z

369

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents (OSTI)

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

370

International Fertilizer Development Center (IFDC) Employment Opportunity in Washington, DC  

E-Print Network (OSTI)

International Fertilizer Development Center (IFDC) Employment Opportunity in Washington, DC Science and Technology Officer - VFRC IFDC has launched the Virtual Fertilizer Research Center (VFRC), a global research, website, other media) 5. Liaison with VFRC BoA Science Committee, IFDC RDD and other technical bodies

Ma, Lena

371

1730 RHODE ISLAND AVENUE, NW WASHINGTON, DC 20036  

E-Print Network (OSTI)

1730 RHODE ISLAND AVENUE, NW SUITE 700 WASHINGTON, DC 20036 WWW.ENERGYRECOVERYCOUNCIL.ORG renewable energy from waste Testimony of Ted Michaels President, Energy Recovery Council Before the Connecticut the reclassification of trash-to-energy facilities as Class 1 renewable energy sources. Chairman Meyer, Chairman Roy

Columbia University

372

Electrostatic coalescence system with independent AC and DC hydrophilic electrodes  

DOE Patents (OSTI)

An improved electrostatic coalescence system is provided in which independent AC and DC hydrophilic electrodes are employed to provide more complete dehydration of an oil emulsion. The AC field is produced between an AC electrode array and the water-oil interface wherein the AC electrode array is positioned parallel to the interface which acts as a grounded electrode. The emulsion is introduced into the AC field in an evenly distributed manner at the interface. The AC field promotes drop-drop and drop-interface coalescence of the water phase in the entering emulsion. The continuous oil phase passes upward through the perforated AC electrode array and enters a strong DC field produced between closely spaced DC electrodes in which small dispersed droplets of water entrained in the continuous phase are removed primarily by collection at hydrophilic DC electrodes. Large droplets of water collected by the electrodes migrate downward through the AC electrode array to the interface. All phase separation mechanisms are utilized to accomplish more complete phase separation.

Hovarongkura, A. David (Arlington, VA); Henry, Jr., Joseph D. (Morgantown, WV)

1981-01-01T23:59:59.000Z

373

Naval Research Laboratory Washington, DC 20375-5320  

E-Print Network (OSTI)

Laboratory, Washington, DC M. Wolford, Science Applications International, Corporation, McLean, VA F. Hegeler resolution along the laser axis to account for the change in gain from mirror to front window. The code) Pulsed Power System Amplifier Window BZ Laser Input Electron Beam Foil Support (Hibachi) Cathode Laser

374

Recovery Act: Integrated DC-DC Conversion for Energy-Efficient Multicore Processors  

SciTech Connect

In this project, we have developed the use of thin-film magnetic materials to improve in energy efficiency of digital computing applications by enabling integrated dc-dc power conversion and management with on-chip power inductors. Integrated voltage regulators also enables fine-grained power management, by providing dynamic scaling of the supply voltage in concert with the clock frequency of synchronous logic to throttle power consumption at periods of low computational demand. The voltage converter generates lower output voltages during periods of low computational performance requirements and higher output voltages during periods of high computational performance requirements. Implementation of integrated power conversion requires high-capacity energy storage devices, which are generally not available in traditional semiconductor processes. We achieve this with integration of thin-film magnetic materials into a conventional complementary metal-oxide-semiconductor (CMOS) process for high-quality on-chip power inductors. This project includes a body of work conducted to develop integrated switch-mode voltage regulators with thin-film magnetic power inductors. Soft-magnetic materials and inductor topologies are selected and optimized, with intent to maximize efficiency and current density of the integrated regulators. A custom integrated circuit (IC) is designed and fabricated in 45-nm CMOS silicon-on-insulator (SOI) to provide the control system and power-train necessary to drive the power inductors, in addition to providing a digital load for the converter. A silicon interposer is designed and fabricated in collaboration with IBM Research to integrate custom power inductors by chip stacking with the 45-nm CMOS integrated circuit, enabling power conversion with current density greater than 10A/mm2. The concepts and designs developed from this work enable significant improvements in performance-per-watt of future microprocessors in servers, desktops, and mobile devices. These new approaches to scaled voltage regulation for computing devices also promise significant impact on electricity consumption in the United States and abroad by improving the efficiency of all computational platforms. In 2006, servers and datacenters in the United States consumed an estimated 61 billion kWh or about 1.5% of the nation's total energy consumption. Federal Government servers and data centers alone accounted for about 10 billion kWh, for a total annual energy cost of about $450 million. Based upon market growth and efficiency trends, estimates place current server and datacenter power consumption at nearly 85 billion kWh in the US and at almost 280 billion kWh worldwide. Similar estimates place national desktop, mobile and portable computing at 80 billion kWh combined. While national electricity utilization for computation amounts to only 4% of current usage, it is growing at a rate of about 10% a year with volume servers representing one of the largest growth segments due to the increasing utilization of cloud-based services. The percentage of power that is consumed by the processor in a server varies but can be as much as 30% of the total power utilization, with an additional 50% associated with heat removal. The approaches considered here should allow energy efficiency gains as high as 30% in processors for all computing platforms, from high-end servers to smart phones, resulting in a direct annual energy savings of almost 15 billion kWh nationally, and 50 billion kWh globally. The work developed here is being commercialized by the start-up venture, Ferric Semiconductor, which has already secured two Phase I SBIR grants to bring these technologies to the marketplace.

Shepard, Kenneth L

2013-03-31T23:59:59.000Z

375

DC powerline communication system using a transmission line transformer for high degree of freedom applications  

E-Print Network (OSTI)

A new type of powerline communication is developed to reduce cable requirements for robotic, electromechanical, and vehicular systems. A DC power bus line connecting a DC power supply to motor drives and sensor units is ...

Wade, Eric R. (Eric Randolph), 1978-

2004-01-01T23:59:59.000Z

376

If you reside in WASHINGTON, DC - MD -VA - WV your salary will...  

National Nuclear Security Administration (NNSA)

If you are employed in the WASHINGTON, DC Metropolitan Area (D.C., Baltimore, Northern VA, Eastern WV, and Southern PA) your salary will range from: Pay Band Pay Plan(s) Minimum...

377

News From the D.C. Office: Federal Procurement of Efficient Chillers  

NLE Websites -- All DOE Office Websites (Extended Search)

3 Aerial view of Washington D.C. News From the D.C. Office Federal Procurement of Efficient Chillers The replacement of large electric chillers in government facilities, driven by...

378

Building Scale DC Microgrids Chris Marnay, Steven Lanzisera, Michael Stadler, and Judy Lai  

E-Print Network (OSTI)

of building loads are either native DC, such as electronics and compact fluorescent and light emitting diode

379

Accurate Load and Generation Scheduling for Linearized DC Models with Contingencies  

SciTech Connect

The power restoration timeline suggested by the DC power flow and the Angle Constrained DC power flow is shown. Unfortunately, the suggested generator dispatch does not always lead to feasible AC power flow solutions. Even when the AC solution is feasible, the inaccuracies of the DC power flow can lead to significant line overloads.

Bent, Russell W. [Los Alamos National Laboratory; Coffrin, Carleton J. [Los Alamos National Laboratory; van Hentenryc, Pascal [NICTA

2012-07-13T23:59:59.000Z

380

Solar Decathlon at Home in the D.C. Community | Department of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Decathlon at Home in the D.C. Community Solar Decathlon at Home in the D.C. Community Addthis A New Energy-Efficient Home in the D.C. Community 1 of 27 A New Energy-Efficient Home...

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

H? robust control of DC-AC interfaced microsource in microgrids  

Science Conference Proceedings (OSTI)

This paper focuses on the direct current -- alternating current (DC-AC) interfaced microsource based H robust control strategies in microgrids. It presents detail of a DC-AC interfaced microsource model which is connected to the ... Keywords: DC-AC interfaced microsource, H? robust control, Microgrid, f-v droop characteristic, smooth switching

Chun-Xia Dou; Fang Zhao; Xing-Bei Jia; Dong-Le Liu

2013-02-01T23:59:59.000Z

382

Speed control of DC motor based on neural net and fuzzy logic  

Science Conference Proceedings (OSTI)

This paper presented the speed control of DC motor based on neural net and fuzzy logic. To bypass the difficulties caused by system constraints and modelling uncertainties of the speed control of DC motor a neural network approach for on-line speed control ... Keywords: DC motor, fuzzy logic, neural network, speed control

Zahra Moravej

2005-09-01T23:59:59.000Z

383

High energy electron fluxes in dc-augmented capacitively coupled plasmas I. Fundamental characteristics  

E-Print Network (OSTI)

as max=-Vdc+Vrf+Vrf0, for a voltage on the dc electrode of Vdc, rf voltage of Vrf, and dc bias on the rf electrode of Vrf0. The dc current from the biased electrode must return to ground through surfaces other

Kushner, Mark

384

VOLTAGE COLLAPSE AND TRANSIENT ENERGY FUNCTION ANALYSES OF AC/DC SYSTEMS  

E-Print Network (OSTI)

VOLTAGE COLLAPSE AND TRANSIENT ENERGY FUNCTION ANALYSES OF AC/DC SYSTEMS by Claudio A. Ca AND TRANSIENT ENERGY FUNCTION ANALYSES OF AC/DC SYSTEMS by Claudio A. Ca~nizares A dissertation submitted . . . . . . . . . . . . . 4 1.3.2 AC/DC Transient Energy Functions . . . . . . . . . . . . . . 6 2 System Modelling 8 2

Cañizares, Claudio A.

385

Design of Electric Vehicles DC Traction Motor Drive System Based on Optimal Control  

Science Conference Proceedings (OSTI)

The traditional electric vehicle DC motor drive system can not automatically weaken magnetic field. This paper designs DC motor drive system which control optimally the motor to meet the requirement. The study results show that: the drive system can ... Keywords: electric vehicles, DC motor, controller, optimal control

Yan Jun

2012-12-01T23:59:59.000Z

386

EE443L: Intermediate Control Lab Lab2: Modeling a DC motor  

E-Print Network (OSTI)

will develop and validate a basic model of a permanent magnet DC motor (Yaskawa Electric, Mini-series, Minertia of a permanent magnet DC motor, the field current is constant (i.e. a constant magnetic field). It can be shownEE443L: Intermediate Control Lab Lab2: Modeling a DC motor Introduction: In this lab we

Wedeward, Kevin

387

Aalborg Universitet Supervisory Control of an Adaptive-Droop Regulated DC Microgrid with Battery  

E-Print Network (OSTI)

Aalborg Universitet Supervisory Control of an Adaptive-Droop Regulated DC Microgrid with Battery Control of an Adaptive-Droop Regulated DC Microgrid with Battery Management Capability. I E E E, 2013 #12;1 Supervisory Control of an Adaptive-Droop Regulated DC Microgrid with Battery Management

Vasquez, Juan Carlos

388

Solar Decathlon at Home in the D.C. Community | Department of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

at Home in the D.C. Community Solar Decathlon at Home in the D.C. Community Addthis A New Energy-Efficient Home in the D.C. Community 1 of 27 A New Energy-Efficient Home in the...

389

Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy  

Science Conference Proceedings (OSTI)

We report a study on self-catalyzed GaP/GaNP core/shell nanowires (NWs) grown on Si(111) by gas-source molecular beam epitaxy. Scanning electron microscopy images show that vertical and uniform GaP NWs and GaP/GaNP core/shell NWs are grown on Si(111). The density ranges from {approx}1 x 10{sup 7} to {approx}5 x 10{sup 8} cm{sup -2} across the substrate. Typical diameters are {approx}110 nm for GaP NWs and {approx}220 nm for GaP/GaNP NWs. Room temperature photoluminescence (PL) signal from the GaP/GaNP core/shell NWs confirms that N is incorporated in the shell and the average N content is {approx}0.9%. The PL low-energy tail is significantly reduced, compared to bulk GaNP.

Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Sukrittanon, S. [Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Li, H. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Tu, C. W. [Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2012-01-30T23:59:59.000Z

390

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network (OSTI)

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, GaP, or (Al,Ga)As, which opens a wide area of possibilities for optimizing the host composition towards higher ferromagnetic Curie temperatures. Here we explore theoretically hole-mediated ferromagnetism and Mn incorporation in Ga(As,P) and (Al,Ga)As ternary hosts. While alloying (Ga,Mn)As with Al has only a small effect on the Curie temperature we predict a sizable enhancement of Curie temperatures in the smaller lattice constant Ga(As,P) hosts. Mn-doped Ga(As,P) is also favorable, as compared to (Al,Ga)As, with respect to the formation of carrier and moment compensating interstitial Mn impurities. In (Ga,Mn) (As,P) we find a marked decrease of the partial concentration of these detrimental impurities with increasing P content.

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

391

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates  

E-Print Network (OSTI)

5221, 34095 Montpellier, France E-mail: pmc53@cam.ac.uk Received October 12, 2012; accepted November 22, 2012; published online May 20, 2013 This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various...

Corfdir, Pierre; Dussaigne, Amlie; Teisseyre, Henryk; Suski, Tadeusz; Grzegory, Izabella; Lefebvre, Pierre; Giraud, Etienne; Shahmohammadi, Mehran; Phillips, Richard; Ganire, Jean-Daniel; Grandjean, Nicolas; Deveaud, Benot

392

DC Resistivity Survey (Schlumberger Array) At Raft River Geothermal Area  

Open Energy Info (EERE)

Area Area (1974-1975) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: DC Resistivity Survey (Schlumberger Array) At Raft River Geothermal Area (1974-1975) Exploration Activity Details Location Raft River Geothermal Area Exploration Technique DC Resistivity Survey (Schlumberger Array) Activity Date 1974 - 1975 Usefulness not indicated DOE-funding Unknown Exploration Basis Hydrogeologic study of the area Notes In 1975, the U.S. Geological Survey made 70 Schlumberger resistivity soundings in the Upper Raft River Valley and in parts of the Raft River Valley. These soundings complement the 79 soundings made previously in the Raft River Valley and bring the total number of soundings to 149. This work was done as part of a hydrogeologic study of the area. The location,

393

Multilevel cascade voltage source inverter with seperate DC sources  

SciTech Connect

A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

Peng, Fang Zheng (Oak Ridge, TN); Lai, Jih-Sheng (Knoxville, TN)

1997-01-01T23:59:59.000Z

394

Multilevel cascade voltage source inverter with seperate DC sources  

DOE Patents (OSTI)

A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

Peng, Fang Zheng (Knoxville, TN); Lai, Jih-Sheng (Blacksburg, VA)

2002-01-01T23:59:59.000Z

395

Multilevel cascade voltage source inverter with separate DC sources  

DOE Patents (OSTI)

A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations. 15 figs.

Peng, F.Z.; Lai, J.S.

1997-06-24T23:59:59.000Z

396

ReHABit : claiming endangered structures in Washington DC to rethink subsidized housing; Claiming endangered structures in Washington DC to rethink subsidized housing.  

E-Print Network (OSTI)

??There is an affordable housing crisis today in Washington D.C. that is the result of a uniquely complicated history of a capital city and a (more)

Fowlkes, Catherine Kuhnle

2007-01-01T23:59:59.000Z

397

Growth orientation dependent photoluminescence of GaAsN alloys  

SciTech Connect

We report photoluminescence (PL) studies of both as-grown and electron-irradiated GaAsN epilayers on (311)A/B and (100) GaAs substrates. A long room-temperature (RT) PL lifetime, as well as an enhanced N incorporation, is observed in (311)B GaAsN epilayers as compared with (311)A and (100) samples. There is no direct correlation between the RT PL lifetime and the emission intensity from Ga vacancy complex detected at low temperature. The lifetime damage coefficient is relatively low for (311)B GaAsN. The irradiation-induced nonradiative recombination defects are suggested to be N- and/or As-related according to a geometrical analysis based on the tetrahedral coordination of GaAsN crystal.

Han, Xiuxun; Tanaka, Tomohiro; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan); Sato, Shinichiro [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)

2012-01-16T23:59:59.000Z

398

dc-plasma-sprayed electronic-tube device  

DOE Patents (OSTI)

An electronic tube and associated circuitry which is produced by dc plasma arc spraying techniques is described. The process is carried out in a single step automated process whereby both active and passive devices are produced at very low cost. The circuitry is extremely reliable and is capable of functioning in both high radiation and high temperature environments. The size of the electronic tubes produced are more than an order of magnitude smaller than conventional electronic tubes.

Meek, T.T.

1982-01-29T23:59:59.000Z

399

Program on Technology Innovation: Superconducting DC Cable Workshop  

Science Conference Proceedings (OSTI)

This report is a summary of discussions and conclusion from a workshop on the technology of superconducting DC transmission cables. The workshop was held at EPRI in Palo Alto, California on October 12, 13, and 14, 2005. The purpose of the meeting was to bring a small group of experts in technologies relevant to the development of such a cable and to enumerate potential issues, technical challenges, and a timetable for development. The first half of the workshop consisted of short technical presentations,...

2006-03-31T23:59:59.000Z

400

The Use of DC Glow Discharges as Undergraduate Educational Tools  

SciTech Connect

Plasmas have a beguiling way of getting students excited and interested in physics. We argue that plasmas can and should be incorporated into the undergraduate curriculum as both demonstrations and advanced investigations of electromagnetism and quantum effects. Our device, based on a direct current (DC) glow discharge tube, allows for a number of experiments into topics such as electrical breakdown, spectroscopy, magnetism, and electron temperature.

Stephanie A. Wissel and Andrew Zwicker, Jerry Ross, and Sophia Gershman

2012-10-09T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Basic DC Meter Design ECE 2100 Circuit Analysis Laboratory  

E-Print Network (OSTI)

Basic DC Meter Design ECE 2100 Circuit Analysis Laboratory updated 8 January 2008 Pre-Laboratory Assignment 1. Design an ammeter with full scale current IFS equal to 5 mA using a meter movement rated at 0.5 mA and 100 mV. 2. Design a voltmeter with a full scale voltage VFS equal to 10 V using the meter

Miller, Damon A.

402

Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

1998-10-14T23:59:59.000Z

403

Growth and Fabrication of GaN/AlGaN Heterojunction Bipolar Transistor  

SciTech Connect

A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si Doping in the emitter and collector regions was grown by Metal Organic Chemical Vapor Deposition in c-axis Al(2)O(3). Secondary Ion Mass Spectrometry measurements showed no increase in the O concentration (2-3x10(18) cm(-3)) in the AlGaN emitter and fairly low levels of C (~4-5x10(17) cm (-3)) throughout the structure. Due to the non-ohmic behavior of the base contact at room temperature, the current gain of large area (~90 um diameter) devices was <3. Increasing the device operating temperature led to higher ionization fractions of the mg acceptors in the base, and current gains of ~10 were obtained at 300 degree C.

Abernathy, C.R.; Baca, A.G.; Cao, X.A.; Cho, H.; Dang, G.T.; Donovan, S.M.; Han, J.; Jung, K.B.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Wilson, R.G.; Zhang, A.P.; Zhang, L

1999-03-16T23:59:59.000Z

404

A InGaN/GaN quantum dot green ({lambda}=524 nm) laser  

SciTech Connect

The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab [Department of Electrical Engineering and Computer Science, Center for Nanoscale Photonics and Spintronics, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2011-05-30T23:59:59.000Z

405

Evaluation of defects and degradation in GaAs-GaAlAs wafers using transmission cathodoluminescence  

Science Conference Proceedings (OSTI)

A large number of GaAs substrates GaAlAs double-heterostructure (DH) wafers, and high-radiance GaAlAs DH light-emitting diodes (LEDS) were evaluated using transmission cathodoluminescence (TCL). We show that only epitaxial wafers with a high defect density as revealed by TCL readily develop dark line defects (DLDs) with current injection, optical excitation, or electron beam excitation. Furthermore, in agreement with the previous work, the electron-beam-induced DLDs originate at dislocations and their growth requires minority-carrier injection. Based on these results, it is inferred that TCL can serve as a nondestructive screening technique for the selection of materials that produces a high yield of reliable LEDs.

Chin, A.K.; Keramidas, V.G.; Johnston, W.D. Jr.; Mahajan, S.; Roccasecca, D.D.

1980-02-01T23:59:59.000Z

406

GaInSb and GaInAsSb thermophotovoltaic device fabrication and characterization  

DOE Green Energy (OSTI)

Thermophotovoltaic (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. The GaInSb layers were grown by organometallic vapor phase epitaxy (OMVPE) and the InGaAsSb lattice-matched layers were grown by liquid phase epitaxy (LPE). Device fabrication steps include unannealed p-type ohmic contacts, annealed Sn/Au n-type ohmic contacts, and a thick Ag top-surface contact using a lift-off process. Devices are characterized primarily by dark I-V, photo I-V, and quantum efficiency measurements, which are correlated to microscopic and macroscopic material properties. Particular emphasis has been on material enhancements to increase quantum efficiency and decrease dark saturation current density. TPV device performance is presently limited by the base diffusion length, typically 1 to 2 microns.

Hitchcock, C.; Gutmann, R.; Borrego, J.; Ehsani, H.; Bhat, I. [Rensselaer Polytechnic Inst., Troy, NY (United States); Freeman, M.; Charache, G. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

407

Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells  

Science Conference Proceedings (OSTI)

The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

Baidus, N. V. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation); Vainberg, V. V. [National Academy of Sciences of Ukraine, Institute of Physics (Ukraine); Zvonkov, B. N. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation); Pylypchuk, A. S., E-mail: pylypchuk@iop.kiev.ua; Poroshin, V. N.; Sarbey, O. G. [National Academy of Sciences of Ukraine, Institute of Physics (Ukraine)

2012-05-15T23:59:59.000Z

408

Maryland DC Virginia Solar Energy Industries Association MDV SEIA | Open  

Open Energy Info (EERE)

DC Virginia Solar Energy Industries Association MDV SEIA DC Virginia Solar Energy Industries Association MDV SEIA Jump to: navigation, search Name Maryland-DC-Virginia Solar Energy Industries Association (MDV-SEIA) Place Bethesda, Maryland Zip 20814-3954 Sector Solar Product Trade associaton to promote solar equipment in the Mid-Atlantic region in US. Coordinates 40.020185°, -81.073819° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.020185,"lon":-81.073819,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

409

Summary of electric vehicle dc motor-controller tests  

DOE Green Energy (OSTI)

Available performance data for production motors are usually of marginal value to the electric vehicle designer. To provide at least a partial remedy to this situation, tests of typical dc propulsion motors and controllers were conducted as part of the DOE Electric Vehicle Program. The objectives of this program were to evaluate the differences in the performance of dc motors when operating with chopper-type controllers and when operating on direct current; and to gain an understanding of the interactions between the motor and the controller which cause these differences. Toward this end, motor-controller tests performed by the NASA Lewis Research Center provided some of the first published data that quantified motor efficiency variations for both ripple-free (straight dc) and chopper modes of operation. Test and analysis work at the University of Pittsburgh explored motor-controller relationships in greater depth. And to provide additional data, 3E Vehicles tested two small motors, both on a dynamometer and in a vehicle, and the Eaton Corporation tested larger motors, using sophisticated instrumentation and digital processing techniques. All the motors tested were direct-current types. Of the separately excited types, seven were series wound and two were shunt wound. One self-excited permanent magnet type was also tested. Four of the series wound motors used brush shifting to obtain good commutation. In almost all cases, controller limitations constrained the test envelope so that the full capability of the motors could not be explored.

McBrien, E F; Tryon, H B

1982-09-01T23:59:59.000Z

410

Radiation Hard AlGaN Detectors and Imager  

Science Conference Proceedings (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

411

InGaAs and Ge MOSFETs with high ? dielectrics  

Science Conference Proceedings (OSTI)

InGaAs and Ge MOSFETs with high @k's are now the leading candidates for technology beyond the 15nm node CMOS. The UHV-Al"2O"3/Ga"2O"3(Gd"2O"3) [GGO]/InGaAs has low electrical leakage current densities, C-V characteristics with low interfacial densities ... Keywords: Atomic layer deposition, Germanium, High ? dielectrics, III-V Compound semiconductor, MOSFETs, Molecular beam epitaxy

W. C. Lee; P. Chang; T. D. Lin; L. K. Chu; H. C. Chiu; J. Kwo; M. Hong

2011-04-01T23:59:59.000Z

412

Atomistic Modeling of Thermodynamic Properties of Pu-Ga Alloys ...  

Science Conference Proceedings (OSTI)

Atomistic Modeling of Thermodynamic Properties of Pu-Ga Alloys Based on the ... Resources for the Selection and Use of Interatomic Potentials in Atomistic...

413

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

contractors supported the dismantlement including asbestos removal and concrete cutting, electrical, and HVAC. Project support functions were provided by GA organizations...

414

fl5HER}l  

E-Print Network (OSTI)

.':....... E ::tl:-;,1 tCl ..:. it~~L~i i~1\\]\\.. ::! tJ_G:.~'-;jOl··S is f\\l;....!liE~ >~:ci ):..r u:~"~E ot'1

415

22209_HPC_cvr_FL  

NLE Websites -- All DOE Office Websites (Extended Search)

of acquisition, installation, integration, testing and operation. Previous High Performance Computing (HPC) Best Practice Workshops focused on System Integration in 2007 (http:...

416

Multiphase soft switched DC/DC converter and active control technique for fuel cell ripple current elimination  

DOE Green Energy (OSTI)

DC/DC converter has a transformer having primary coils connected to an input side and secondary coils connected to an output side. Each primary coil connects a full-bridge circuit comprising two switches on two legs, the primary coil being connected between the switches on each leg, each full-bridge circuit being connected in parallel wherein each leg is disposed parallel to one another, and the secondary coils connected to a rectifying circuit. An outer loop control circuit that reduces ripple in a voltage reference has a first resistor connected in series with a second resistor connected in series with a first capacitor which are connected in parallel with a second capacitor. An inner loop control circuit that reduces ripple in a current reference has a third resistor connected in series with a fourth resistor connected in series with a third capacitor which are connected in parallel with a fourth capacitor.

Lai, Jih-Sheng (Blacksburg, VA); Liu, Changrong (Sunnyvale, CA); Ridenour, Amy (Salem, VA)

2009-04-14T23:59:59.000Z

417

Optimization of DC-DC Converters for Improved Electromagnetic Compatibility With High Energy Physics Front-End Electronics  

E-Print Network (OSTI)

The upgrade of the Large Hadron Collider (LHC) experiments at CERN sets new challenges for the powering of the detectors. One of the powering schemes under study is based on DC-DC buck converters mounted on the front-end modules. The hard environmental conditions impose strict restrictions to the converters in terms of low volume, radiation and magnetic field tolerance. Furthermore, the noise emission of the switching converters must not affect the performance of the powered systems. A study of the sources and paths of noise of a synchronous buck converter has been made for identifying the critical parameters to reduce their emissions. As proof of principle, a converter was designed following the PCB layout considerations proposed and then used for powering a silicon strip module prototype for the ATLAS upgrade, in order to evaluate their compatibility.

Fuentes, C; Michelis, S; Blanchot, G; Allongue, B; Faccio, F; Orlandi, S; Kayal, M; Pontt, J

2011-01-01T23:59:59.000Z

418

Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 {mu}m  

Science Conference Proceedings (OSTI)

Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecular beam epitaxy (MBE). Photoluminescence (PL) reveals strong improvements in the optical properties evidenced by 10 times enhancement in PL intensity and extended emission wavelength up to 1.29 {mu}m when Bi is introduced to InGaAs/GaAs QWs. The improved optical quality results from the Bi surfactant effect as well as the Bi incorporation. Post growth thermal annealing shows that Bi atoms in InGaAs/GaAs QWs do not show good thermal stability at 650 Degree-Sign C and tend to diffuse out of the QWs resulting in large wavelength blue-shifts.

Ye Hong; Song Yuxin; Wang Shumin [Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE-41296 (Sweden); Gu Yi [Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2012-12-15T23:59:59.000Z

419

Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots  

Science Conference Proceedings (OSTI)

In this work, we demonstrate the dependence of the nitrogen incorporation on the Ga/In content into (In,Ga)(As,N) quantum dots (QDs) grown on GaAs (100) by radio-frequency plasma assisted molecular beam epitaxy (MBE). Morphological analysis by atomic force microscopy and cross-sectional transmission electron microscopy, together with an estimation of the transition thickness, monitored in situ during the growth, predict a maximum in the N incorporation for 30% Ga content. This result is confirmed by photoluminescence measurements of the as-grown and post-growth annealed samples. We attribute this behavior to a trade off between two mechanisms depending on the Ga/In content: one related to the stability of the Ga-N bond, and the other related to the surface strain and/or In segregation.

Gargallo-Caballero, R.; Guzman, A.; Ulloa, J. M.; Hierro, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM)-Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Hopkinson, M. [Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom); Luna, E.; Trampert, A. [Paul Drude Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2012-04-15T23:59:59.000Z

420

Bulk growth of GaSb and Ga{sub 1{minus}x}In{sub x}Sb  

DOE Green Energy (OSTI)

GaSb and InGaSb have been demonstrated to be suitable choices for high efficiency thermophotovoltaic (TPV) cells. Synthesis and growth of bulk GaSb single crystals and GaInSb polycrystals have been carried out by the vertical Bridgman technique, with a baffle immersed in the melt and by complete encapsulation of the melt by low melting temperature alkali halides or oxides. The critical roles of the baffle and the encapsulation are discussed. Efforts in obtaining device grade GaSb with superior structural and electrical properties and compositionally homogeneous GaInSb are described, emphasizing the key steps in the growth cycle developed to obtain good crystalline quality.

Dutta, P.S.; Ostrogorsky, A.G.; Gutmann, R.J.

1997-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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421

P8, Fabrication of Subwavelength Pillar Arrays on GaAs by Confined ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

422

II4, Compositionally-Graded Layers Composed of Tandem InGaAs ...  

Science Conference Proceedings (OSTI)

The specification of the 6 miscut is important because it provides step ..... of Metamorphic InGaP on GaAs and GaP for Wide-Bandgap Photovoltaic Junctions.

423

Solar Decathlon at Home in the D.C. Community | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Solar Decathlon at Home in the D.C. Community Solar Decathlon at Home in the D.C. Community Solar Decathlon at Home in the D.C. Community Addthis A New Energy-Efficient Home in the D.C. Community 1 of 27 A New Energy-Efficient Home in the D.C. Community On December 4, 2012, the Empowerhouse team, along with partners and community members, completed the installation of a permanent, two-family home in Washington, D.C. The home was originally showcased as part of the U.S Department of Energy's Solar Decathlon 2011. Image: Sarah Gerrity Date taken: 2012-12-04 12:22 2 of 27 The house is located in the D.C. neighborhood of Deanwood, which is just 10 miles from the National Mall. By installing the house nearby, the team was able to minimize shipping costs, therefore reducing the house's carbon footprint. Image: Sarah Gerrity

424

DC Regional High School Science Bowl | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

DC Regions » DC Regional High DC Regions » DC Regional High School Science Bowl National Science Bowl® (NSB) NSB Home About High School High School Students High School Coaches High School Regionals High School Rules, Forms, and Resources Middle School Attending National Event Volunteers 2013 Competition Results News Media WDTS Home Contact Information National Science Bowl® U.S. Department of Energy SC-27/ Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: 202-586-6702 E: National.Science.Bowl@science.doe.gov Washington DC Regions DC Regional High School Science Bowl Print Text Size: A A A RSS Feeds FeedbackShare Page Regional Coordinator Information Name: Jamie T. Scipio Email: jamie.scipio@hq.doe.gov Regional Event Information Date: Saturday, February 22, 2014 Maximum Number of Teams: 12

425

News From the D.C. Office: Energy-Saving Office Equipment Part 2  

NLE Websites -- All DOE Office Websites (Extended Search)

3 Aerial view of Washington D.C. 3 Aerial view of Washington D.C. News From the D.C. Office Energy-Saving Office Equipment Part 2: Making the "Virtual Office" Real More on the DC Office efficiency up-grade: Lighting, Office Equipment: Part 1 Regular readers of the Center for Building Science News know that energy-efficient lighting and office equipment can have significant environmental and economic benefits. Previous articles ("Monitored Savings from Energy-Efficient Lighting in D.C. Office" [Spring 1997, p. 3] and "Energy-Saving Office equipment" [Summer 1997, p. 3]) discussed these features of Berkeley Lab's Washington, D.C. office. The D.C. office also serves as a demonstration site for telecommunications technologies, which have energy and environmental benefits of their own.

426

Energy Challenge Two: The WeatherizeDC Campaign | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Energy Challenge Two: The WeatherizeDC Campaign Energy Challenge Two: The WeatherizeDC Campaign Energy Challenge Two: The WeatherizeDC Campaign June 14, 2010 - 9:15am Addthis John Lippert In my quest to learn what other local groups are doing to help the environment and hopefully avoid reinventing the wheel, I attended a meeting of the Greenbelt Climate Action Network, a local chapter of the grassroots, nonprofit organization Chesapeake Climate Action Network. There I met two WeatherizeDC field organizers who described the work they are doing. Terrance and Heather explained that WeatherizeDC is a campaign of The DC Project, a nonprofit based in Washington, D.C., founded by former leaders of the Obama for America campaign around a mission to advance economic and environmental justice by creating clean energy career opportunities for

427

DC Regional Middle School Science Bowl | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

DC Regions » DC Regional Middle DC Regions » DC Regional Middle School Science Bowl National Science Bowl® (NSB) NSB Home About High School Middle School Middle School Students Middle School Coaches Middle School Regionals Middle School Rules, Forms, and Resources Attending National Event Volunteers 2013 Competition Results News Media WDTS Home Contact Information National Science Bowl® U.S. Department of Energy SC-27/ Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: 202-586-6702 E: National.Science.Bowl@science.doe.gov Washington DC Regions DC Regional Middle School Science Bowl Print Text Size: A A A RSS Feeds FeedbackShare Page Regional Coordinator Information Name: Chester Scott Email: chester.scott@hq.doe.gov Regional Event Information Date: Saturday, February 8, 2014 Maximum Number of Teams: 12

428

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm, Mingwei Zhu  

E-Print Network (OSTI)

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm in nonpolar light-emitting diodes (LEDs) covering the blue to green spectral range. In photo- luminescence, m's overall power efficiency. Linearly polarized light can be efficiently generated in GaInN/GaN-based light-emitting

Wetzel, Christian M.

429

Data:D28923dc-45dc-45e5-b62b-3ca789517591 | Open Energy Information  

Open Energy Info (EERE)

923dc-45dc-45e5-b62b-3ca789517591 923dc-45dc-45e5-b62b-3ca789517591 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Northern States Power Co - Minnesota Effective date: 2012/05/01 End date if known: Rate name: SMALL GENERAL TIME OF DAY SERVICE Low Wattage (A22) Sector: Commercial Description: Customer Charge per Month (Please see page 5-24.1) Available to any non-residential customer for single or three phase electric service supplied through one meter. DETERMINATION OF CUSTOMER BILLS Customer bills shall reflect energy charges (if applicable) based on customer's kWh usage, plus a customer charge (if applicable), plus demand charges (if applicable) based on customer's kW billing demand as defined. INTERIM RATE ADJUSTMENT A 4.49% Interim Rate Surcharge will be applied to rate components specified in the "Interim Rate Surcharge Rider." In addition, customer bills under this rate are subject to the following adjustments and/or charges. FUEL CLAUSE Bills are subject to the adjustments provided for in the Fuel Clause Rider. RESOURCE ADJUSTMENT Bills are subject to the adjustments provided for in the Conservation Improvement Program Adjustment Rider, the State Energy Policy Rate Rider, the Renewable Development Fund Rider, the Transmission Cost Recovery Rider, the Renewable Energy Standard Rider and the Mercury Cost Recovery Rider. ENVIRONMENTAL IMPROVEMENT RIDER Bills are subject to the adjustments provided for in the Environmental Improvement Rider.

430

A high efficiency, soft switching dc-dc converter with adaptive current-ripple control for portable applications  

E-Print Network (OSTI)

AbstractA novel control scheme for improving the power efficiency of low-voltage dcdc converters for battery-powered, portable applications is presented. In such applications, light-load efficiency is crucial for extending battery life, since mobile devices operate in stand-by mode for most of the time. The proposed technique adaptively reduces the inductor current ripple with decreasing load current while soft switching the converter to also reduce switching losses, thereby significantly improving light-load efficiency and therefore extending the operation life of battery-powered devices. A load-dependent, mode-hopping strategy is employed to maintain high efficiency over a wide load range. Hysteretic (sliding-mode) control with user programmable hysteresis is implemented to adaptively regulate the current ripple and therefore optimize conduction and switching losses. Experimental results show that for a 1-A, 5- to 1.8-V buck regulator, the proposed technique achieved 5 % power efficiency improvement (from 72 % to 77%) at 100 mA of load current and a 1.5% improvement (from 84 % to 85.5%) at 300 mA, which constitute light-load efficiency improvements, when compared to the best reported, state-of-the-art techniques. As a result, the battery life in a typical digital signalr processing microprocessor application is improved by 7%, which demonstrates the effectiveness of the proposed solution. Index TermsBattery life, buck converter, dcdc converter, efficiency, hysteretic control, sliding-mode control, soft switching, switching regulator.

Siyuan Zhou; Student Member; Gabriel A. Rincn-mora; Senior Member

2006-01-01T23:59:59.000Z

431

An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell  

DOE Green Energy (OSTI)

This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

Venkatasubramanian, R. (Research Triangle Inst., Research Triangle Park, NC (United States))

1993-01-01T23:59:59.000Z

432

Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor  

Science Conference Proceedings (OSTI)

Keywords: Ga vacancies, GaN growth, gas feeding method, optical property, rapid thermal chemical vapor deposition (RTCVD), yellow luminescence

Sun Jung Kim; Young Hun Seo; Kee Suk Nahm; Yun Bong Hahn; Hyun Wook Shim; Eun-Kyung Suh; Kee Young Lim; Hyung Jae Lee

1999-08-01T23:59:59.000Z

433

Data:Dde6ed62-e484-4ffc-a3dc-f6680a6b86c5 | Open Energy Information  

Open Energy Info (EERE)

Dde6ed62-e484-4ffc-a3dc-f6680a6b86c5 Dde6ed62-e484-4ffc-a3dc-f6680a6b86c5 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: City of LaFayette, Georgia (Utility Company) Effective date: 2013/04/08 End date if known: Rate name: Economic Development Rate - ED1 Sector: Description: Source or reference: https://cas.sharepoint.illinoisstate.edu/grants/Sunshot/Lists/DATA%20ENTRY%20Additional%20Information%20Obtained/Attachments/72/City%20of%20LaFayette%20GA%20rates.pdf Source Parent: Comments Applicability Demand (kW) Minimum (kW): Maximum (kW): History (months): Energy (kWh) Minimum (kWh): Maximum (kWh): History (months):

434

Functional Imprinting Structures on GaN-Based Light-Emitting ...  

Science Conference Proceedings (OSTI)

Keywords: GaN, light-emitting diode (LED), imprinting technology, far-field pattern modulation, light extraction. 1. Introduction. GaN-based light-emitting diodes...

435

Bonding and gap states at GaAs-oxide interfaces  

Science Conference Proceedings (OSTI)

The nature of bonding and possible causes of Fermi level pinning at high mobility-high dielectric constant oxide GaAs:HfO"2 interfaces are discussed. It is argued that these are atoms with defective bonding, rather than states due to the bulk semiconductor ... Keywords: GaAs, bonding, interface

John Robertson; Liang Lin

2011-04-01T23:59:59.000Z

436

DC Resistivity Survey (Schlumberger Array) | Open Energy Information  

Open Energy Info (EERE)

Schlumberger Array) Schlumberger Array) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Technique: DC Resistivity Survey (Schlumberger Array) Details Activities (2) Areas (2) Regions (0) NEPA(0) Exploration Technique Information Exploration Group: Geophysical Techniques Exploration Sub Group: Electrical Techniques Parent Exploration Technique: Vertical Electrical Sounding Configurations Information Provided by Technique Lithology: Rock composition, mineral and clay content Stratigraphic/Structural: Detection of permeable pathways, fracture zones, faults Hydrological: Resistivity influenced by porosity, grain size distribution, permeability, fluid saturation, fluid type and phase state of the pore water Thermal: Resistivity influenced by temperature

437

DC Resistivity Survey (Wenner Array) | Open Energy Information  

Open Energy Info (EERE)

Wenner Array) Wenner Array) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Technique: DC Resistivity Survey (Wenner Array) Details Activities (0) Areas (0) Regions (0) NEPA(0) Exploration Technique Information Exploration Group: Geophysical Techniques Exploration Sub Group: Electrical Techniques Parent Exploration Technique: Vertical Electrical Sounding Configurations Information Provided by Technique Lithology: Rock composition, mineral and clay content Stratigraphic/Structural: Detection of permeable pathways, fracture zones, faults Hydrological: Resistivity influenced by porosity, grain size distribution, permeability, fluid saturation, fluid type and phase state of the pore water Thermal: Resistivity influenced by temperature Dictionary.png

438

DC Resistivity Survey (Pole-Dipole Array) | Open Energy Information  

Open Energy Info (EERE)

Pole-Dipole Array) Pole-Dipole Array) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Technique: DC Resistivity Survey (Pole-Dipole Array) Details Activities (0) Areas (0) Regions (0) NEPA(0) Exploration Technique Information Exploration Group: Geophysical Techniques Exploration Sub Group: Electrical Techniques Parent Exploration Technique: Electrical Profiling Configurations Information Provided by Technique Lithology: Rock composition, mineral and clay content Stratigraphic/Structural: Detection of permeable pathways, fracture zones, faults Hydrological: Resistivity influenced by porosity, grain size distribution, permeability, fluid saturation, fluid type and phase state of the pore water Thermal: Resistivity influenced by temperature Dictionary.png

439

The dc modeling program (DCMP): Version 2. 0  

Science Conference Proceedings (OSTI)

In this project one of the main objectives was the refinement of tools for the study of HVDC systems. The original software was prepared in project RP1964-2 (EL-4365) as power flow and stability program models for HVDC systems. In this project new modeling capabilities were added to both the power flow and stability models. Additionally, the HVDC specific model capabilities were integrated into a new program, termed the Standalone program, for use in the development and testing of HVDC models. This manual provides technical background for programmers and those interested in understanding, augmenting or transporting the dc models.

Chapman, D.G. (Manitoba HVDC Research Centre, Winnipeg, MB (Canada))

1990-08-01T23:59:59.000Z

440

Hardwired Control Changes For NSTX DC Power Feeds  

SciTech Connect

The National Spherical Torus Experiment (NSTX) has been designed and installed in the existing facilities at Princeton Plasma Physics Laboratory (PPPL). Most of the hardware, plant facilities, auxiliary sub-systems, and power systems originally used for the Tokamak Fusion Test Reactor (TFTR) have been used with suitable modifications to reflect NSTX needs. The original TFTR Hardwired Control System (HCS) with electromechanical relays was used for NSTX DC Power loop control and protection during NSTX operations. As part of the NSTX Upgrade, the HCS is being changed to a PLC-based system with the same control logic. This paper gives a description of the changeover to the new PLC-based system __________________________________________________

Ramakrishnan, S.

2013-06-28T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Feasibility of dc transmission with forced commutation to remote loads  

SciTech Connect

Previous researchers have analysed the forced commutated HVDC inverter and have concluded that it could be used to meet the reactive power at the inverter terminals. This investigation is a further technical appraisal involving a two terminal transmission scheme to a remote load with no ac generation at the load. Several possible inverter configurations are discussed. An electromagnetic transients program is used to model the system and simulate such aspects as start up, ac and dc faults and speed of response to voltage and frequency controls. The results indicate that such a scheme is indeed technically feasible and may be quite attractive from an economic and reliability point of view.

Turanli, H.M.; Menzies, R.W.; Woodford, D.A.

1984-06-01T23:59:59.000Z

442

dc-to-ac power converter for fuel cell system  

SciTech Connect

As the interface between fuel cells and the utility line, a self-commutated inverter is preferred to a line-commutated inverter because of its easy controllability. Using the gate turn off (GTO) thyristors, this inverter can have high efficiency and simple circuit configurations. This paper describes the design features and test results of the dc-to-ac power converter, which is principally composed of four-phase transistor chopper and 12-pulse GTO inverter, for a 50kW experimental fuel cell power system. Furthermore, new GTO inverter which improves the circuit efficiency is presented. Special emphasis is placed on a detailed analysis and evaluation of this GTO inverter.

Kawabata, T.; Asaeda, T.; Hamasaki, Y.; Yutani, T.

1983-10-01T23:59:59.000Z

443

Elastic properties of Pu metal and Pu-Ga alloys  

Science Conference Proceedings (OSTI)

We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

2010-01-05T23:59:59.000Z

444

Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well  

E-Print Network (OSTI)

be applicable to light sources in fiber-optic communication systems.13 However, there have been no reports intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

Jalali. Bahram

445

Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells  

E-Print Network (OSTI)

Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells J. Schörmann,a S and multiple quantum wells. The well widths ranged from 2.5 to 7.5 nm. Samples were grown by rf-plasma assisted wells clear reflection high energy electron diffraction oscillations were observed indicating a two

As, Donat Josef

446

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network (OSTI)

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

447

Development of high power green light emitting diode dies in piezoelectric GaInN/GaN  

E-Print Network (OSTI)

Development of high power green light emitting diode dies in piezoelectric GaInN/GaN Christian in green light emitting diodes is one of the big challenges towards all-solid- state lighting. The prime,3], and commercialization [4,5] of high brightness light emitting diodes LEDs has led to a 1.82 Billion-$/year world market

Detchprohm, Theeradetch

448

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes  

E-Print Network (OSTI)

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

Wetzel, Christian M.

449

Edison Revisited: Should we use DC Circuits for Lighting in Commercial  

NLE Websites -- All DOE Office Websites (Extended Search)

Edison Revisited: Should we use DC Circuits for Lighting in Commercial Edison Revisited: Should we use DC Circuits for Lighting in Commercial Buildings? Speaker(s): Brinda Thomas Date: March 7, 2012 - 12:30pm Location: 90-3122 Seminar Host/Point of Contact: Chris Marnay This seminar summarizes work from a forthcoming Energy Policy paper and thoughts on future work to understand the economics of DC building circuits. We examined the economic feasibility of a general application of DC building circuits to operate commercial lighting systems. We compare light-emitting diodes (LEDs) and fluorescents that are powered by either a central DC power supply or traditional AC grid electricity, with and without solar photovoltaics (PV) and battery back-up. We find that there are limited life-cycle ownership cost and capital cost benefits of DC

450

News From the D.C. Office: Monitored Savings from Energy-Efficient Lighting  

NLE Websites -- All DOE Office Websites (Extended Search)

3 Aerial view of Washington D.C. 3 Aerial view of Washington D.C. News From the D.C. Office Monitored Savings from Energy-Efficient Lighting in D.C. Office More on the DC Office efficiency up-grade: Office Equipment: Part 1, Part 2 Figure 1: Lighting energy use profile for a typical exterior office. Berkeley Lab's office in Washington, D.C. is located a few blocks from DOE headquarters, in a five-year-old office building constructed mainly for lease to Federal agencies and their contractors. Despite its recent vintage, the building's standard lighting specifications were far from today's best, cost-effective practice. In designing the build-out plans for offices and meeting rooms in our 7,500-square-foot suite, we wanted to showcase some of the energy-efficient lighting and office equipment developed for DOE's Building Technologies

451

Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells  

Science Conference Proceedings (OSTI)

We investigate the incorporation of nitrogen into (Ga,In)Sb grown on GaSb and report room temperature photoluminescence from GaInSb(N) quantum wells. X-ray diffraction and channeling nuclear reaction analysis, together with Rutherford backscattering, were employed to identify the optimal molecular beam epitaxial growth conditions that minimized the incorporation of non-substitutional nitrogen into GaNSb. Consistent with this hypothesis, GaInSb(N) quantum wells grown under the conditions that minimized non-substitutional nitrogen exhibited room temperature photoluminescence, indicative of significantly improved radiative efficiency. Further development of this material system could enable type-I laser diodes emitting throughout the (3-5 {mu}m) wavelength range.

Nair, Hari P.; Crook, Adam M.; Bank, Seth R. [Microelectronics Research Center, Electrical and Computer Engineering, University of Texas at Austin, 10100 Burnet Rd, Austin, Texas 78712 (United States); Yu, Kin M. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2012-01-09T23:59:59.000Z

452

GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy  

Science Conference Proceedings (OSTI)

We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum dots grown by molecular beam epitaxy. Various nanostructures are observed as a function of the growth parameters. During growth, relaxation of the high local strain fields of the nanostructures plays an important role in their formation. Pyramidal dots with a high Sb content are often accompanied by threading dislocations above them. GaSb ring formation is favored by the use of a thin GaAs first cap layer and a high growth temperature of the second cap layer. At these capping conditions, strain-driven Sb diffusion combined with As/Sb exchange and Sb segregation remove the center of a nanostructure, creating a ring. Clusters of GaSb without a well defined morphology also appear regularly, often with a highly inhomogeneous structure which is sometimes divided up in fragments.

Smakman, E. P.; Garleff, J. K.; Rambabu, P.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Eindhoven 5612 AZ (Netherlands); Young, R. J.; Hayne, M. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2012-04-02T23:59:59.000Z

453

AC to DC Line Conversion: DConvert Program Version 1.0  

Science Conference Proceedings (OSTI)

The past several years have seen renewed interest in the prospect of converting ac lines to dc operation interest spurred both by the ongoing need to make greater use of existing transmission assets and advances in HVDC converter technology. EPRI has sponsored two major studies dealing with the conversion prospect. The first, 8220Tools for Assessing Conversion of AC Power Transmission Lines to DC,(Product ID # 1020651) and the second, 8220Dc Capability of AC Transmission Lines,(Product ID #1013979). Cont...

2010-10-26T23:59:59.000Z

454

Technology Assessment and Application Guide for Active Power's CoolAir DC  

Science Conference Proceedings (OSTI)

This report describes and documents the construction and performance of a novel battery free backup power product, CoolAir (DC) based upon TACAS (Thermal Compressed Air Storage) technology and manufactured by Active Power of Austin, Texas. Comprised of compressed air tanks, thermal storage unit, high-speed air turbine, flywheel, and power electronics, the CoolAir DC is designed to deliver DC power to devices such as an uninterruptible power supply or adjustable speed drive while producing cool air during...

2005-11-15T23:59:59.000Z

455

Study of power transfer capability of dc systems incorporating ac loads and a parallel ac line  

Science Conference Proceedings (OSTI)

Concepts of maximum power transfer of dc systems and associated ac voltage variations, particularly at inverter stations having low short-circuit ratios, have been extended to include various ac load models and an ac line in parallel with the dc line. The operating capabilities are shown to vary from those predicted from either a Thevenin ac source model or the corresponding short-circuit ratio. The study used an ac/dc load flow program.

Reeve, J.; Uzunovic, E. [Univ. of Waterloo, Ontario (Canada)

1997-01-01T23:59:59.000Z

456

Reduction of 1/fnoise in high-T dc superconducting quantum ...  

Reduction of 1/fnoise in high-Tc dc superconducting quantum interference devices cooled in an ambient magnetic ?eld E. Dantsker, S. Tanaka, P.-A?.

457

2D Joint Inversion Of Dc And Scalar Audio-Magnetotelluric Data...  

Open Energy Info (EERE)

D Joint Inversion Of Dc And Scalar Audio-Magnetotelluric Data In The Evaluation Of Low Enthalpy Geothermal Fields Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home...

458

Characterization of Fir-tree Zones in AA1050 DC Cast Ingot  

Science Conference Proceedings (OSTI)

Using combination of electron backscattered diffraction, energy dispersive ... of Fe-bearing intermetallics throughout the fir-tree zones of AA1050 DC ingot were ...

459

BERAC Meeting November 3-4, 2004 Washington, DC | U.S. DOE Office...  

Office of Science (SC) Website

3-4, 2004 Washington, DC Biological and Environmental Research Advisory Committee (BERAC) BERAC Home Meetings BERAC Minutes BERAC Minutes Archive Members Charges Reports Charter...

460

Water | Desire: Design of a Responsible Urban Retreat in Georgetown, Washington, DC.  

E-Print Network (OSTI)

??The design of an urban retreat within an industrial building in Georgetown, DC provides an opportunity to experience water in the built environment. The location (more)

Zimmerli, Tanya

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Optimizing Energy Savings from Direct-DC in U.S. Residential Buildings  

E-Print Network (OSTI)

for Renewables and Efficiency: Net Metering Policies SummaryDC residential distribution. Net-Metering Because the gridgrid-connected [33]. Net metering makes grid-connected PV

Garbesi, Karina

2012-01-01T23:59:59.000Z

462

Effect of Sb on the Properties of GaInP Top Cells (Presentation)  

DOE Green Energy (OSTI)

The summary of this report is that: (1) Sb can be used to increase V{sub oc} of a GaInP top cell; (2) the photovoltaic quality of GaInP is relatively unaffected by the presence of Sb; and (3) Sb-doped GaInP/GaAs tandem cells show promise for achieving efficiencies over 32%.

Olson, J. M.; McMahon, W. E.; Kurtz, S.

2006-05-01T23:59:59.000Z

463

Dielectrics for GaN based MIS-diodes  

SciTech Connect

GaN MIS diodes were demonstrated utilizing AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as insulators. A 345 {angstrom} of AlN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a wavemat ECR N2 plasma. For the Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) growth, a multi MBE chamber was used and a 195 {angstrom} oxide is E-beam evaporated from a single crystal source of Ga{sub 5}Gd{sub 3}O{sub 12}. The forward breakdown voltage of AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) diodes are 5V and 6V, respectively, which are significantly improved from {approximately} 1.2 V of schottky contact. From the C-V measurements, both kinds of diodes showed good charge modulation from accumulation to depletion at different frequencies. The insulator GaN interface roughness and the thickness of the insulator were measured with x-ray reflectivity.

Ren, F.; Abernathy, C.R.; MacKenzie, J.D. [Univ. of Florida, Gainesville, FL (United States)] [and others

1998-02-01T23:59:59.000Z

464

Atomic hydrogen cleaning of polarized GaAs photocathodes  

DOE Green Energy (OSTI)

Atomic hydrogen cleaning followed by heat cleaning at 450 C was used to prepare negative-electron-affinity GaAs photocathodes. When hydrogen ions were eliminated, quantum efficiencies of 15% were obtained for bulk GaAs cathodes, higher than the results obtained using conventional 600 C heat cleaning. The low-temperature cleaning technique was successfully applied to thin, strained GaAs cathodes used for producing highly polarized electrons. No depolarization was observed even when the optimum cleaning time of about 30 seconds was extended by a factor of 100.

Maruyama, Takashi

2003-04-03T23:59:59.000Z

465

Data:73d310b4-d5f4-48dc-b4dc-9aca99090e47 | Open Energy Information  

Open Energy Info (EERE)

0b4-d5f4-48dc-b4dc-9aca99090e47 0b4-d5f4-48dc-b4dc-9aca99090e47 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Village of Black Earth, Wisconsin (Utility Company) Effective date: 1999/08/01 End date if known: Rate name: Ms-1 Outdoor Lighting Service: Athletic Field Lighting Sector: Lighting Description: Application: This schedule will be applied to municipal street lighting. The utility will furnish, install, and maintain street lighting units. Fixed Monthly Charge includes Commitment to Community Rider: $1.33 per customer per month. Power Cost Adjustment Clause: Charge per all kWh varies monthly.

466

Data:32e71087-dc4e-4f67-a64d-c27cf8411705 | Open Energy Information  

Open Energy Info (EERE)

-dc4e-4f67-a64d-c27cf8411705 -dc4e-4f67-a64d-c27cf8411705 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: City of Rockwood, Tennessee (Utility Company) Effective date: 2012/12/01 End date if known: Rate name: Outdoor Lighting HPS 200w Sector: Lighting Description: ROCKWOOD ELECRIC UTILITY can install a private security light on your residential or commercial property under most conditions. All new requests for outdoor lighting require the applicant to sign a minimum two year contract for security lighting service. If you have security concerns and would like to discuss outdoor lighting options, please contact our Engineering Department to look at the situation with you.

467

Data:692a2dc0-44ed-44ef-a5d9-f42dc3f27436 | Open Energy Information  

Open Energy Info (EERE)

dc0-44ed-44ef-a5d9-f42dc3f27436 dc0-44ed-44ef-a5d9-f42dc3f27436 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Tri-County Elec Member Corp (Tennessee) Effective date: 2013/06/01 End date if known: Rate name: 400 Watt MV Sector: Lighting Description: Source or reference: http://www.tcemc.org/index.php/residential-information/ Source Parent: Comments Applicability Demand (kW) Minimum (kW): Maximum (kW): History (months): Energy (kWh) Minimum (kWh): Maximum (kWh): History (months): Service Voltage Minimum (V): Maximum (V): Character of Service Voltage Category: Phase Wiring: << Previous 1 2 3 Next >>

468

Data:5df914dc-748a-4757-980d-c7fa8bd9d9fe | Open Energy Information  

Open Energy Info (EERE)

dc-748a-4757-980d-c7fa8bd9d9fe dc-748a-4757-980d-c7fa8bd9d9fe No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Sumter Electric Member Corp Effective date: 2012/01/01 End date if known: Rate name: Outdoor Lighting Off- Roadway HPS 250 W Sector: Lighting Description: * Fixed Monthly Charge does not include monthly pole rate charges Source or reference: http://www.sumteremc.com/pdfs/OL-9.pdf Source Parent: Comments Applicability Demand (kW) Minimum (kW): Maximum (kW): History (months): Energy (kWh) Minimum (kWh): Maximum (kWh): History (months): Service Voltage Minimum (V): Maximum (V): Character of Service

469

Outdoor Testing of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied  

DOE Green Energy (OSTI)

In this study, we measure the performance of GaInP2/GaAs tandem cells under direct beam sunlight outdoors in order to quantify their sensitivity to both spectral variation and GaInP2 top-cell thickness. A set of cells with five different top-cell thicknesses was mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for either the ASTM G-173 direct (G-173D) spectrum or the "air mass 1.5 global" (AM1.5G) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra with the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

McMahon, W. E.; Emergy, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

2005-08-01T23:59:59.000Z

470

On-Sun Comparison of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied  

DOE Green Energy (OSTI)

This study compares the on-sun performance of a set of GaInP2/GaAs tandem cells with different GaInP2 top-cell thicknesses. Because high-efficiency III-V cells are best suited to concentrating photovoltaic (CPV) applications, the cells were mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for an ''air mass 1.5 global'' (AM 1.5G) or a ''low aerosol optical depth'' (Low AOD) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra to predict the correct result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

McMahon, W. E.; Emery, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

2005-02-01T23:59:59.000Z

471

lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells  

E-Print Network (OSTI)

lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells H. C. Chui, S. M. Lord report the first observation of intersubband transitions in In,Ga, -#s(y=O.3,0.5)/ AlGaAs quantum wells. These quantum wells were grown on a GaAs substrate with a linearly graded InGaAs buffer to achieve strain

Fejer, Martin M.

472

Research, Washington, DC (United States) Sandia National Labs.,  

Office of Scientific and Technical Information (OSTI)

584878 SAND--95-2914 GeoEnergy technology 1980-12-31 USDOE Office of Energy 584878 SAND--95-2914 GeoEnergy technology 1980-12-31 USDOE Office of Energy Research, Washington, DC (United States) Sandia National Labs., Albuquerque, NM (United States) English 2010-02-18 Technical Report http://www.osti.gov/geothermal/servlets/purl/584878-P1qAuZ/webviewable/ http://www.osti.gov/energycitations/product.biblio.jsp?osti_id=584878 29 ENERGY PLANNING AND POLICY; RESEARCH PROGRAMS; COAL; PETROLEUM; NATURAL GAS; SYNTHETIC PETROLEUM; GEOTHERMAL ENERGY; ENERGY CONVERSION; PRODUCTION; HEAT EXTRACTION; US DOE; IN-SITU GASIFICATION; ENHANCED RECOVERY; COAL LIQUEFACTION; GEOTHERMAL WELLS Geothermal Legacy 894529 894529 Use of Geothermal Energy for Aquaculture Purposes - Phase III Johnson, W.C.; Smith, K.C. 1981-09-01 USDOE Geo-Heat Center, Klamath Falls, OR English

473

Disc rotors with permanent magnets for brushless DC motor  

DOE Patents (OSTI)

A brushless dc permanent magnet motor drives an autonomous underwater vehe. In one embodiment, the motor comprises four substantially flat stators in stacked relationship, with pairs of the stators axially spaced, each of the stators comprising a tape-wound stator coil, and first and second substantially flat rotors disposed between the spaced pairs of stators. Each of the rotors includes an annular array of permanent magnets embedded therein. A first shaft is connected to the first rotor and a second, concentric shaft is connected to the second rotor, and a drive unit causes rotation of the two shafts in opposite directions. The second shaft comprises a hollow tube having a central bore in which the first shaft is disposed. Two different sets of bearings support the first and second shafts. In another embodiment, the motor comprises two ironless stators and pairs of rotors mounted on opposite sides of the stators and driven by counterrotating shafts.

Hawsey, Robert A. (Oak Ridge, TN); Bailey, J. Milton (Knoxville, TN)

1992-01-01T23:59:59.000Z

474

Analog Integrated Circuits and Signal Processing, 42, 231238, 2005 c ? 2005 Springer Science + Business Media, Inc. Manufactured in The Netherlands. Cascode Monolithic DC-DC Converter for Reliable Operation at High Input Voltages  

E-Print Network (OSTI)

Abstract. A cascode bridge circuit for monolithic switching DC-DC converters operating at high input voltages is proposed in this paper. The proposed circuit can also be used as an I/O buffer to interface circuits operating at significantly different voltages. The circuit technique permits the full integration of the active and passive devices of a switching DC-DC converter with a high voltage conversion ratio in a standard low voltage CMOS technology. The cascode bridge structure guarantees the reliable operation of deep submicrometer MOSFETs without exposure to high voltage stress while operating at high input and output voltages. With the proposed circuit technique, steady-state voltage differences between the terminals of all of the MOSFETs in a switching DC-DC converter are maintained within a range imposed by a target low voltage CMOS technology. High-to-low DC-DC converters operating at input voltages up to three times as high as the maximum voltage that can be directly applied across the terminals of a MOSFET are described. An efficiency of 79.6 % is achieved for 5.4 volts to 0.9 volts conversion assuming a 0.18 m CMOS technology. The DC-DC converter operates at a switching frequency of 97 MHz while supplying a DC current of 250 mA to the load. Key Words: low voltage DC-DC converters, monolithic voltage regulators, low voltage CMOS technology, MOSFET reliability issues, high voltage stress 1.

Volkan Kursun; Siva G. Narendra; Vivek K. De; Eby G. Friedman

2004-01-01T23:59:59.000Z

475

Realization of compressively strained GaN films grown on Si(110) substrates by inserting a thin AlN/GaN superlattice interlayer  

Science Conference Proceedings (OSTI)

We investigate the strain properties of GaN films grown by plasma-assisted molecular beam epitaxy on Si(110) substrates. It is found that the strain of the GaN film can be converted from a tensile to a compressive state simply by inserting a thin AlN/GaN superlattice structure (SLs) within the GaN film. The GaN layers seperated by the SLs can have different strain states, which indicates that the SLs plays a key role in the strain modulation during the growth and the cooling down processes. Using this simple technique, we grow a crack-free GaN film exceeding 2-{mu}m-thick. The realization of the compressively strained GaN film makes it possible to grow thick GaN films without crack generation on Si substrates for optic and electronic device applications.

Shen, X. Q.; Takahashi, T.; Kawashima, H.; Ide, T.; Shimizu, M. [Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Central 2, Tsukuba-shi, Ibaraki 305-8568 (Japan)

2012-07-16T23:59:59.000Z

476

Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching  

E-Print Network (OSTI)

The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...

Chen, A.

477

A new arrangement of AC/DC converters for high direct-current applications  

Science Conference Proceedings (OSTI)

A novel AC/DC converter designed for high-output direct currents and tight output voltage regulations is introduced. The proposed converter exhibits good efficiency and very low output voltage ripple. In order to verify the performances of the four-stage ... Keywords: AC/DC converter, FFT, electrical distribution systems, high direct-current

Francesco Muzi; Luigi Passacantando

2008-04-01T23:59:59.000Z

478

Improvements in power quality and efficiency with a new AC/DC high current converter  

Science Conference Proceedings (OSTI)

A very flexible AC/DC converter featuring high-output current, reduced voltage ripple and highly adjustable current control is described. The whole system consists of four stages and uses a proper switching technique in conjunction with a feedback control ... Keywords: AC/DC converter, FFT, electrical distribution systems, high direct-current, power quality

Francesco Muzi; Luigi Passacantando

2008-05-01T23:59:59.000Z

479

The GreenIT DC-benchmarking tool: from scientific theory to real life  

Science Conference Proceedings (OSTI)

Energy efficiency is one of the topics in achieving the goal of reducing the CO2 output in the next years. Data centers (DC) are big polluters. GreenIT DC-Benchmarking is the first neutral benchmarking tool that shows the specific energy and ... Keywords: data center benchmarking, energy consumption, energy efficiency & monitoring, key performance indicator, power usage effectiveness (PUE)

Ywes Israel; Thomas Leitert

2012-05-01T23:59:59.000Z

480

Stabilizing technique for AC-DC boost PFC converter based on time delay feedback  

Science Conference Proceedings (OSTI)

It is well known that the ac-dc power factor correction (PFC) boost preregulator can present instability at the line frequency. This nonlinear phenomenon can jeopardize the system performances by increasing the total harmonic distortion and decreasing ... Keywords: ac-dc converters, line frequency instability, power factor correction (PFC), time delay feedback (TDF)

Abdelali El Aroudi; Mohamed Orabi

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

EPRI HVDC Reference Book: Chapter 13 - DC Transmission with Voltage Sourced Converters  

Science Conference Proceedings (OSTI)

DC Transmission with voltage sourced converters (VSC) is a relatively new development in DC transmission. This report covers circuits, theory and capabilities of this new development in HVDC transmission. The report will be a Chapter in the comprehensive HVDC reference guide that EPRI is preparing.

2009-12-21T23:59:59.000Z

482

Abstract. Doxycycline (Dc) has been demonstrated to inhibit cell growth and induce apoptosis in tumor cells,  

E-Print Network (OSTI)

Abstract. Doxycycline (Dc) has been demonstrated to inhibit cell growth and induce apoptosis of apoptosis, whereas the role of the caspase-9 was limited. Keywords. Doxycycline, apoptosis, mitochondria by inhibiting bacterial protein syn- thesis. Doxycycline (Dc) is a semi-synthetic tetracycline made by modifying

Tian, Weidong

483

Design and Verification of Smart and Scalable DC Microgrids for Emerging Regions  

E-Print Network (OSTI)

Design and Verification of Smart and Scalable DC Microgrids for Emerging Regions P. Achintya solutions that displace fossil fuels and are financially viable for developing regions. A novel DC microgrid-testing of the technical and economic viability of the microgrid system are presented. I. INTRODUCTION Millions

Sanders, Seth

484

Control of Parallel-Connected Bidirectional AC-DC Converters in Stationary Frame for Microgrid  

E-Print Network (OSTI)

Control of Parallel-Connected Bidirectional AC-DC Converters in Stationary Frame for Microgrid-- With the penetration of renewable energy in modern power system, microgrid has become a popular application worldwide. In this paper, parallel-connected bidirectional converters for AC and DC hybrid microgrid application

Teodorescu, Remus

485

A high-power switch-mode dc power supply for dynamic loads  

SciTech Connect

High-voltage dc power supplies are often required to operate with highly dynamic loads, such as arcs. A switch-mode dc power supply can offer significant advantages over conventional thyristor-based dc power supplies under such conditions. It can quickly turn off the supply to extinguish the arc, and it can quickly recover after the arc. It has a relatively small output filter capacitance, which results in small stored energy available to the arc. A 400-kW, 50-kV switch-mode dc power supply for an electron-beam gun that exploits these advantages was designed and tested. It uses four 100-kW, current-source-type dc-dc converters with inputs in parallel and outputs in series. The dc-dc converters operate at 20 kHz in the voltage regulator part and 10 kHz in the inverter, transformer, and output rectifier part of the circuit. Insulated gate bipolar transistors (IGBTs) are used as the power switches. Special techniques are used to protect the power supply and load against arcs and hard shorts. The power supply has an efficiency of 93%, an output voltage ripple of 1%, and fast dynamic response. In addition, it is nearly one-third the size of conventional power supplies.

Shimer, D.W.; Lange, A.C. [Lawrence Livermore National Lab., CA (United States); Bombay, J.N. [Kaiser Engineers, Oakland, CA (United States)

1994-06-23T23:59:59.000Z

486

Design and analysis of an electronic ballast with a secondary DC output  

Science Conference Proceedings (OSTI)

An electronic ballast circuit for a high-frequency operated fluorescent lamp, which uses switched-capacitor techniques, is presented in this paper. A part of energy in the electronic ballast is derived to a secondary DC output as a power supply. All ... Keywords: DC power supply, electronic ballast, energy recovery, resonant converter

K. W. E. Cheng; H. Y. Wang; D. K. W. Cheng

2008-11-01T23:59:59.000Z

487

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta, GA Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA October 7, 2013 - 3:16pm Addthis Energy on My Mind / FUPWG / Atlanta, GA / May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta, Georgia Tuesday, May 2, 2006 5:00 - 6:30 Steering Committee meeting in the Danube Tigris Room 6:30 until... Networking dinner at the Marriott Wednesday, May 3, 2006 7:45 am Registration/Continental Breakfast 8:30 - 8:45 Welcome from Suzanne Sitherwood, SVP, Southern Operations, President, Atlanta Gas Light, Chattanooga Gas & Florida City Gas 8:45 - 9:00 FEMP Southeast Regional Office Welcome Traci Leath, FEMP 9:00 - 9:45 Washington Update David McAndrew, FEMP 9:45 - 10:15 Break - Networking 10:15 - 11:20 Navy Technical Program Update Paul Kistler, U.S. Navy

488

Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep...

489

Lattice vibrations of pure and doped GaSe  

Science Conference Proceedings (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

490

HH5, Antiferromagnetic Interlayer Exchange Couplings in Ga  

Science Conference Proceedings (OSTI)

Author(s), Sun Jae Chung, Sanghoon Lee, Brian J. Kirby, Julie A. Borchers, ... LATE NEWS: KK3, Non-Catalytic Synthesis of GaN Nanostructures at Low...

491

Preparation of GaAs photocathodes at low temperature  

SciTech Connect

The preparation of an atomically clean surface is a necessary step in the formation of negative electron affinity (NEA) GaAs. Traditional methods to this end include cleaving, heat cleaning and epitaxial growth. Cleaving has the advantage of yielding a fresh surface after each cleave, but is limited to small areas and is not suitable for specialized structures. Heat cleaning is both simple and highly successful, so it is used as a preparation method in virtually all laboratories employing a NEA source on a regular basis. Due to its high cost and complexity, epitaxial growth of GaAs with subsequent in vacuo transfer is not a practical solution for most end users of GaAs as a NEA electron source. While simple, the heating cleaning process has a number of disadvantages. Here, a variety of cleaning techniques related to preparation of an atomically clean GaAs surface without heating to 600 C are discussed and evaluated.

Mulhollan, G.; Clendenin, J.; Tang, H.

1996-10-01T23:59:59.000Z

492

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

Gasoline and Diesel Fuel Update (EIA)

Trinidad and Tobago (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul...

493

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

Gasoline and Diesel Fuel Update (EIA)

Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780...

494

Elba Island, GA Liquefied Natural Gas Total Imports (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

Liquefied Natural Gas Total Imports (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Total Imports (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5...

495

GaAs Films Prepared by RF-Magnetron Sputtering  

DOE Green Energy (OSTI)

The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25 {micro}m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34 {+-} 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm{sup -1} for wavelengths greater than about 1.25 {micro}m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.

L.H. Ouyang; D.L. Rode; T. Zulkifli; B. Abraham-Shrauner; N. Lewis; M.R. Freeman

2001-08-01T23:59:59.000Z

496

Micro Raman Spectroscopy of Annealed Erbium Implanted GaN  

E-Print Network (OSTI)

Wurtzite GaN epilayers grown by metal organic chemical vapor deposition on sapphire substrates were subsequently ion implanted with Er to a dose of 510? cm?. The implanted samples were annealed in nitrogen atmosphere ...

Vajpeyi, Agam P.

497

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Equatorial Guinea (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Equatorial Guinea (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3...

498

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Nigeria (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Nigeria (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6...

499

Cathodoluminescence Microanalysis of Suspended GaN Nano ...  

Science Conference Proceedings (OSTI)

CL from bulk GaN is dominated by the ~3.4 eV near-band-edge emission. In contrast, the suspended nano-membranes emit a broad defect associated emission...

500

BB2, Novel Cs-Free GaN Photocathodes  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [