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Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
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We encourage you to perform a real-time search of NLEBeta
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1

Characterization of the CEBAF 100 kV DC GaAs Photoelectron Gun Vacuum System  

SciTech Connect (OSTI)

A vacuum system with pressure in the low ultra-high vacuum (UHV) range is essential for long photocathode lifetimes in DC high voltage GaAs photoguns. A discrepancy between predicted and measured base pressure in the CEBAF photoguns motivated this study of outgassing rates of three 304 stainless steel chambers with different pretreatments and pump speed measurements of non-evaporable getter (NEG) pumps. Outgassing rates were measured using two independent techniques. Lower outgassing rates were achieved by electropolishing and vacuum firing the chamber. The second part of the paper describes NEG pump speed measurements as a function of pressure through the lower part of the UHV range. Measured NEG pump speed is high at pressures above 5×10^?11 Torr, but may decrease at lower pressures depending on the interpretation of the data. The final section investigates the pump speed of a locally produced NEG coating applied to the vacuum chamber walls. These studies represent the first detailed vacuum measurements of CEBAF photogun vacuum chambers.

M.L. Stutzman; P. Adderley; J. Brittian; J. Clark; J. Grames; J. Hansknecht; G.R. Myneni; M. Poelker

2007-05-01T23:59:59.000Z

2

dc field-emission analysis of GaAs and plasma-source ion-implanted stainless steel  

SciTech Connect (OSTI)

Field-emission studies have been performed on a GaAs wafer and a sample of its stainless-steel (SS) support electrode that are part of a photocathode gun for the 10 kW Upgrade infrared free electron laser at Jefferson Lab. The objective of the studies presented here is to characterize the effect of both the cleanliness of the wafer and the plasma-source ion-implanted layer on the electrode to suppress field emission. Field emission is the limiting factor to achieve the required 6 MV/m at the surface of the wafer. Potential field emitters are first located on the surface of 1 in. diameter samples with a dc scanning field-emission microscope at 60 MV/m, then each emitter is characterized in a scanning electron microscope equipped with an energy dispersive spectrometer. The GaAs wafer was hydrogen cleaned before the study. The results show three emitters caused by indium contamination during wafer handling. The GaAs wafer thus shows good high-voltage characteristics and the need to maintain cleanliness during handling. The SS sample is hand polished with diamond paste to a 1-m surface finish, then implanted with N2/SiO2 in a plasma-source ion-implantation chamber in preparation for the field-emission studies.

C. Hernandez; T. Wang; T. Siggins; D. Bullard; H. F. Dylla; C. Reece; N. D. Theodore; D. M. Manos

2003-06-01T23:59:59.000Z

3

Optical and digital GaAs technologies for signal-processing applications; Proceedings of the Meeting, Orlando, FL, Apr. 16-18, 1990  

SciTech Connect (OSTI)

Practical problems that need to be solved for the introduction of optical modules into processing systems are reviewed. Some papers deal with the state of the art in such key devices as Bragg cells, spatial light modulators, and fast CCDs. Issues unique to optical packaging are also highlightened. New architectures to enable real-time operations are demonstrated, and optical interconnects for parallel processors are discussed. Particular attention is given to the status and operational advantages of government-sponsored efforts to upgrade existing military systems with digital GaAs signal processors and the state of the art in computer-aided design and advanced system architectures.

Bendett, M.P.; Butler, D.H., Jr.; Prabhakar, A.; Yang, A.; (Honeywell, Inc., Minneapolis, MN; Booz, Allen and Hamilton, Inc., Bethesda, MD; DARPA, Arlington, VA)

1990-01-01T23:59:59.000Z

4

Stochastic dynamic systems fl T. Soderstrom, 1997  

E-Print Network [OSTI]

Stochastic dynamic systems Chapter 5 c fl T. S¨oderstr¨om, 1997 1 Optimal estimation ffl The conditional mean ffl Best linear estimate ffl ML estimation c fl T. S¨oderstr¨om, 1997 2 Optimal estimation criterion 2. Symmetric cond pdf c fl T. S¨oderstr¨om, 1997 3 Best linear estimate Given Ex = mx ; Ey = my E

Flener, Pierre

5

Stochastic dynamic systems fl T. Soderstrom, 1997  

E-Print Network [OSTI]

Stochastic dynamic systems Chapter 2 c fl T. S¨oderstr¨om, 1997 1 Some probability theory ffl Basic facts ffl Conditional distributions ffl Complex­valued Gaussian variables c fl T. S¨oderstr¨om, 1997 2) increasing ffl limx!1 F(x) = 1 ffl lim x!\\Gamma1 F (x) = 0 c fl T. S¨oderstr¨om, 1997 3 Random variables

Flener, Pierre

6

Stochastic dynamic systems fl T. Soderstrom, 1997  

E-Print Network [OSTI]

Stochastic dynamic systems Chapter 10 c fl T. S¨oderstr¨om, 1997 1 Optimal stochastic control ffl controllers c fl T. S¨oderstr¨om, 1997 2 Optimal stochastic control ­ some illustrative examples System x¨oderstr¨om, 1997 3 Optimal stochastic control ­ Deterministic system Criterion J = x 2 (N) = [ax(N \\Gamma 1) + bu

Flener, Pierre

7

Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat  

E-Print Network [OSTI]

Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

Shepelyansky, Dima

8

Bi-directional dc-dc Converter  

Broader source: Energy.gov (indexed) [DOE]

MTBF Dc-dc Fabrication Validation Data Performance Validation BOM and Cost analysis EMIEMC Custom Components Fabrication Components Validation Vehicle System Review Phase-I...

9

The Essentials for GA Water Planning The Relationship  

E-Print Network [OSTI]

" FL Water Law Regulated Riparianism "Heavy" Admin Water Law ? #12;Comprehensive Water Resource Study Supply a. Water Allocation ­ Withdrawal Permit Program b. Water Storage & Delivery c. Interbasin TransferThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

Rosemond, Amy Daum

10

Fl YO Co -op E athea lectric  

E-Print Network [OSTI]

are based on a false premise that the cost and usage pattern for energy in the Pacific Northwest should and Energy Efficiency The High Level indicator of "Regional Electricity Use per Person vs. US Average" shouldFl YO Co -op E athea lectric Community...Integrity...Reliability 2510 U.S. Highway 2 East

11

ARIZONA STATE UNIVERSITY STETSON UNIVERSITY Phoenix, AZ Deland, FL  

E-Print Network [OSTI]

English Literature English BOWLING GREEN STATE UNIVERSITY Bowling Green, OH SYRACUSE UNIVERSITY IndustrialARIZONA STATE UNIVERSITY STETSON UNIVERSITY Phoenix, AZ Deland, FL Interdisciplinary Studies Leadership FLORIDA STATE UNIVERSITY Instructional Systems Design Tallahassee, FL Interdisciplinary Studies

Wu, Shin-Tson

12

FUPWG Meeting Agenda - Destin, FL | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Destin, FL FUPWG Meeting Agenda - Destin, FL Going coastal for energy efficiency. FUPWG. April 15-16, 2008, Destin, Florida Gulf Power: A Southern Company FEMP logo April 15-16,...

13

Vision FL LLC | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov PtyInformation UCOpenVerona,HamptonVinland,InformationVirydFL LLC Jump to:

14

US SoAtl FL Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines About U.S. NaturalA. Michael SchaalNovember 26,8,CoalThousandIL SiteMidAtl PANE MA SiteFL

15

DC source assemblies  

DOE Patents [OSTI]

Embodiments of DC source assemblies of power inverter systems of the type suitable for deployment in a vehicle having an electrically grounded chassis are provided. An embodiment of a DC source assembly comprises a housing, a DC source disposed within the housing, a first terminal, and a second terminal. The DC source also comprises a first capacitor having a first electrode electrically coupled to the housing, and a second electrode electrically coupled to the first terminal. The DC source assembly further comprises a second capacitor having a first electrode electrically coupled to the housing, and a second electrode electrically coupled to the second terminal.

Campbell, Jeremy B; Newson, Steve

2013-02-26T23:59:59.000Z

16

Building Scale DC Microgrids  

E-Print Network [OSTI]

resources, a 10 kW vertical axis wind turbine, and Fig. 4AC-grid Fig. 3. Vertical axis wind turbine in the AIT DC µ

Marnay, Chris

2013-01-01T23:59:59.000Z

17

Building Scale DC Microgrids  

E-Print Network [OSTI]

resources, a 10 kW vertical axis wind turbine, and Fig. 4the µgrid Fig. 3. Vertical axis wind turbine in the AIT DC µ

Marnay, Chris

2014-01-01T23:59:59.000Z

18

RES D.C.  

Broader source: Energy.gov [DOE]

RES DC, hosted by the National Center for American Indian Enterprise Development (The National Center), will feature access to respected tribal leaders, members of congress, federal agency...

19

Federal Government Congressional Budget Office, Health & Human Services, Long Term Modeling Washington, DC  

E-Print Network [OSTI]

Manila, Philippines BRAC Dhaka, Bangladesh California Forward San Francisco, CA CARE (WDI) Atlanta, GA and Dhaka, Bangladesh CARE USA Washington, DC SUMMER 2009 INTERNSHIPS #12;Center for Women Policy Studies Educational Resources Africa Kumasi, Ghana Pew Center on Global Climate Change Washington, DC Rick Snyder

Shyy, Wei

20

150W.UniversityBlvd. Melbourne,FL32901  

E-Print Network [OSTI]

150W.UniversityBlvd. Melbourne,FL32901 321-674-8000 NickAbruzzini Junior,Ocean Engineering JanelleBoisvert Junior,Ocean Engineering KatieDobek Junior, Ocean Engineering Anthony Tedeschi Junior,Ocean Engineering

Wood, Stephen L.

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

CPDD 2011 Annual Meeting June 22, 2011 Hollywood, FL  

E-Print Network [OSTI]

Individualized Sequences of Health Interventions Using SMART Design Technology to Develop an Adaptive and When CPDD 2011 Annual Meeting June 22, 2011 Hollywood, FL 2. Clinical Setting Address Barriers to Care Improve maternal and infant outcomes Conduct clinical research to generate new knowledge to improve

Murphy, Susan A.

22

DC attenuation meter  

DOE Patents [OSTI]

A portable, hand-held meter used to measure direct current (DC) attenuation in low impedance electrical signal cables and signal attenuators. A DC voltage is applied to the signal input of the cable and feedback to the control circuit through the signal cable and attenuators. The control circuit adjusts the applied voltage to the cable until the feedback voltage equals the reference voltage. The "units" of applied voltage required at the cable input is the system attenuation value of the cable and attenuators, which makes this meter unique. The meter may be used to calibrate data signal cables, attenuators, and cable-attenuator assemblies.

Hargrove, Douglas L.

2004-09-14T23:59:59.000Z

23

Multiplatform Dynamic System Simulation of a DC-DC Converter.  

E-Print Network [OSTI]

??The work presented in this paper focuses on the usability testing for the Open-Modelica. The modeling and simulation of the BMR450 DC-DC converter is also… (more)

Song, Wenpeng

2012-01-01T23:59:59.000Z

24

A global maximum power point tracking DC-DC converter  

E-Print Network [OSTI]

This thesis describes the design, and validation of a maximum power point tracking DC-DC converter capable of following the true global maximum power point in the presence of other local maximum. It does this without the ...

Duncan, Joseph, 1981-

2005-01-01T23:59:59.000Z

25

DC arc weld starter  

DOE Patents [OSTI]

A system for starting an arc for welding uses three DC power supplies, a high voltage supply for initiating the arc, an intermediate voltage supply for sustaining the arc, and a low voltage welding supply directly connected across the gap after the high voltage supply is disconnected.

Campiotti, Richard H. (Tracy, CA); Hopwood, James E. (Oakley, CA)

1990-01-01T23:59:59.000Z

26

Auxiliary resonant DC tank converter  

DOE Patents [OSTI]

An auxiliary resonant dc tank (ARDCT) converter is provided for achieving soft-switching in a power converter. An ARDCT circuit is coupled directly across a dc bus to the inverter to generate a resonant dc bus voltage, including upper and lower resonant capacitors connected in series as a resonant leg, first and second dc tank capacitors connected in series as a tank leg, and an auxiliary resonant circuit comprising a series combination of a resonant inductor and a pair of auxiliary switching devices. The ARDCT circuit further includes first clamping means for holding the resonant dc bus voltage to the dc tank voltage of the tank leg, and second clamping means for clamping the resonant dc bus voltage to zero during a resonant period. The ARDCT circuit resonantly brings the dc bus voltage to zero in order to provide a zero-voltage switching opportunity for the inverter, then quickly rebounds the dc bus voltage back to the dc tank voltage after the inverter changes state. The auxiliary switching devices are turned on and off under zero-current conditions. The ARDCT circuit only absorbs ripples of the inverter dc bus current, thus having less current stress. In addition, since the ARDCT circuit is coupled in parallel with the dc power supply and the inverter for merely assisting soft-switching of the inverter without participating in real dc power transmission and power conversion, malfunction and failure of the tank circuit will not affect the functional operation of the inverter; thus a highly reliable converter system is expected.

Peng, Fang Z. (Knoxville, TN)

2000-01-01T23:59:59.000Z

27

DOE - Office of Legacy Management -- Armour Fertilizer Works - FL 01  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou are here Home » SitesNJFertilizer Works - FL 01

28

City of Quincy, FL Smart Grid Project | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy Nebraska (UtilityGeorgiaArkansas References: EIA Form EIA-861Quincy, FL

29

Sandia National Laboratories: HeFl Flow Loop  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 -theErik Spoerke SSLS Exhibit at ExploraGlobal SandiaVermontFacilityHeFl Flow Loop

30

Improved DC Gun Insulator  

SciTech Connect (OSTI)

Many user facilities such as synchrotron light sources and free electron lasers require accelerating structures that support electric fields of 10-100 MV/m, especially at the start of the accelerator chain where ceramic insulators are used for very high gradient DC guns. These insulators are difficult to manufacture, require long commissioning times, and have poor reliability, in part because energetic electrons bury themselves in the ceramic, creating a buildup of charge and causing eventual puncture. A novel ceramic manufacturing process is proposed. It will incorporate bulk resistivity in the region where it is needed to bleed off accumulated charge caused by highly energetic electrons. This process will be optimized to provide an appropriate gradient in bulk resistivity from the vacuum side to the air side of the HV standoff ceramic cylinder. A computer model will be used to determine the optimum cylinder dimensions and required resistivity gradient for an example RF gun application. A ceramic material example with resistivity gradient appropriate for use as a DC gun insulator will be fabricated by glazing using doping compounds and tested.

M.L. Neubauer, K.B. Beard, R. Sah, C. Hernandez-Garcia, G. Neil

2009-05-01T23:59:59.000Z

31

Power flow analysis for DC voltage droop controlled DC microgrids  

E-Print Network [OSTI]

loss, such as photovoltaic panels, batteries, fuel cells, LEDs, and electronic loads, DC microgrids sharing and secondary voltage regulation can now be analytically studied, and specialized optimization of the DC microgrid, in term of systematic analysis, protection coordination design, network optimization

Chaudhary, Sanjay

32

E-Print Network 3.0 - aurigae fl lyrae Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Search Sample search results for: aurigae fl lyrae Page: << < 1 2 3 4 5 > >> 1 Astronomy C Tiger Invitational February 20, 2010 Summary: Astronomy C Tiger Invitational...

33

Triple voltage dc-to-dc converter and method  

DOE Patents [OSTI]

A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

Su, Gui-Jia (Knoxville, TN)

2008-08-05T23:59:59.000Z

34

Catalog of DC Appliances and Power Systems  

E-Print Network [OSTI]

Appliance Efficient DC compatible replacement technology variable-speed compressor and fans run by brushless DC motor in place of single-speed compressors

Garbesi, Karina

2012-01-01T23:59:59.000Z

35

Bi-Directional DC-DC Converter for PHEV Applications  

SciTech Connect (OSTI)

Plug-In Hybrid Electric Vehicles (PHEV) require high power density energy storage system (ESS) for hybrid operation and high energy density ESS for Electric Vehicle (EV) mode range. However, ESS technologies to maximize power density and energy density simultaneously are not commercially feasible. The use of bi-directional DC-DC converter allows use of multiple energy storage, and the flexible DC-link voltages can enhance the system efficiency and reduce component sizing. This will improve fuel consumption, increase the EV mode range, reduce the total weight, reduce battery initial and life cycle cost, and provide flexibility in system design.

Abas Goodarzi

2011-01-31T23:59:59.000Z

36

Catalog of DC Appliances and Power Systems  

SciTech Connect (OSTI)

This document catalogs the characteristics of current and potential future DC products and power systems.

Garbesi, Karina; Vossos, Vagelis; Shen, Hongxia

2010-10-13T23:59:59.000Z

37

Mechanism of Nitric Oxide Reactivity and Fluorescence Enhancement of the NO-Specific Probe CuFL1  

E-Print Network [OSTI]

The mechanism of the reaction of CuFL1 (FL1 = 2-{2-chloro-6-hydroxy-5-[(2-methylquinolin-8-ylamino)methyl]-3-oxo-3H-xanthen-9-yl}benzoic acid) with nitric oxide (NO) to form the N-nitrosated product FL1-NO in buffered ...

McQuade, Lindsey E.

38

Switching coordination of distributed dc-dc converters for highly efficient photovoltaic power plants  

DOE Patents [OSTI]

A distributed photovoltaic (PV) power plant includes a plurality of distributed dc-dc converters. The dc-dc converters are configured to switch in coordination with one another such that at least one dc-dc converter transfers power to a common dc-bus based upon the total system power available from one or more corresponding strings of PV modules. Due to the coordinated switching of the dc-dc converters, each dc-dc converter transferring power to the common dc-bus continues to operate within its optimal efficiency range as well as to optimize the maximum power point tracking in order to increase the energy yield of the PV power plant.

Agamy, Mohammed; Elasser, Ahmed; Sabate, Juan Antonio; Galbraith, Anthony William; Harfman Todorovic, Maja

2014-09-09T23:59:59.000Z

39

Light-weight DC to very high voltage DC converter  

DOE Patents [OSTI]

A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current.

Druce, Robert L. (Union City, CA); Kirbie, Hugh C. (Dublin, CA); Newton, Mark A. (Livermore, CA)

1998-01-01T23:59:59.000Z

40

Light-weight DC to very high voltage DC converter  

DOE Patents [OSTI]

A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current. 1 fig.

Druce, R.L.; Kirbie, H.C.; Newton, M.A.

1998-06-30T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

High efficiency resonant dc/dc converter for solar power applications .  

E-Print Network [OSTI]

??This thesis presents a new topology for a high efficiency dc/dc resonant power converter that utilizes a resistance compression network to provide simultaneous zero voltage… (more)

Inam, Wardah

2013-01-01T23:59:59.000Z

42

Ph. 234 --Topics in Theoretical Physics lectures by Dr. f:l. Gell-r.Iann  

E-Print Network [OSTI]

j Ph. 234 -- Topics in Theoretical Physics lectures by Dr. f:l. Gell-r.Iann notes by \\'Jilliam G by Dr. Murray Gell-Ma.nn; vritten by... William G. 'Hagner. September 30, 1958 We shall first reviev

Martin, Alain

43

ASME 2008 Summer Heat transfer Conference August 10-14, 2008, Jacksonville, FL., USA  

E-Print Network [OSTI]

ASME 2008 Summer Heat transfer Conference August 10-14, 2008, Jacksonville, FL., USA HT2008, University of Victoria Victoria, BC , V8W 2Y2, Canada ABSTRACT Accurate information on the temperature eld

Bahrami, Majid

44

International Journal of Foundations of Computer Science fl World Scientific Publishing Company  

E-Print Network [OSTI]

International Journal of Foundations of Computer Science c fl World Scientific Publishing Company Science, University of Idaho Moscow, Idaho 83844­1010, USA and MOSHE DROR MIS Department, University

Krings, Axel W.

45

AC and DC power transmission  

SciTech Connect (OSTI)

The technical and economic assessment of AC and DC transmission systems; long distance transmission, cable transmission, system inter-connection, voltage support, reactive compensation, stabilisation of systems; parallel operation of DC links with AC systems; comparison between alternatives for particular schemes. Design and application equipment: design, testing and application of equipment for HVDC, series and shunt static compensated AC schemes, including associated controls. Installations: overall design of stations and conductor arrangements for HVDC, series and shunt static AC schemes including insulation co-ordination. System analysis and modelling.

Not Available

1985-01-01T23:59:59.000Z

46

DC to DC power converters and methods of controlling the same  

DOE Patents [OSTI]

A power generation system configured to provide direct current (DC) power to a DC link is described. The system includes a first power generation unit configured to output DC power. The system also includes a first DC to DC converter comprising an input section and an output section. The output section of the first DC to DC converter is coupled in series with the first power generation unit. The first DC to DC converter is configured to process a first portion of the DC power output by the first power generation unit and to provide an unprocessed second portion of the DC power output of the first power generation unit to the output section.

Steigerwald, Robert Louis; Elasser, Ahmed; Sabate, Juan Antonio; Todorovic, Maja Harfman; Agamy, Mohammed

2012-12-11T23:59:59.000Z

47

Catalog of DC Appliances and Power Systems  

E-Print Network [OSTI]

DC solar-powered DC air-conditioning heat pump produced byRoom Air Conditioners Geothermal Heat Pumps Lighting-efficiency of an air source electric heat-pump water heater

Garbesi, Karina

2012-01-01T23:59:59.000Z

48

DC systems with transformerless converters  

SciTech Connect (OSTI)

A technical and economic feasibility study of HVDC systems without converter transformers is presented. The presentation includes proposed solutions to the drawback related to the absence of galvanic separation between the ac and dc systems, if the converter transformers are eliminated. The results show that HVDC systems without converter transformers are both technically and economically feasible. The cost savings can be substantial.

Vithayathil, J.J.; Mittlestadt, W. [Bonneville Power Administration, Portland, OR (United States)] [Bonneville Power Administration, Portland, OR (United States); Bjoerklund, P.E. [ABB Power Systems AB, Ludvika (Sweden)] [ABB Power Systems AB, Ludvika (Sweden)

1995-07-01T23:59:59.000Z

49

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design  

SciTech Connect (OSTI)

The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

2000-04-25T23:59:59.000Z

50

Reliability Assessment of Fault-Tolerant Dc-Dc Converters for Photovoltaic Applications  

E-Print Network [OSTI]

Reliability Assessment of Fault-Tolerant Dc-Dc Converters for Photovoltaic Applications Sairaj V performance and reliability analysis of switch-mode, dc-dc power converters employed as front ends of the converter's steady-state operation on device failure rates. Markov reliability models are derived to assess

Liberzon, Daniel

51

Design and development of a DC-DC converter for a fuel cell inverter system  

E-Print Network [OSTI]

This thesis outlines the design and development of a DC-DC converter for a fuel cell inverter application. The proposed DC-DC converter was designed and tested at Texas A&M to meet the specifications laid down for the '2001 Future Energy Challenge...

Gopinath, Rajesh

2001-01-01T23:59:59.000Z

52

DC WRRC Report No. 92 Directory of University Water  

E-Print Network [OSTI]

DC WRRC Report No. 92 Directory of University Water Expertise in the District of Columbia DC Water Avenue, NW Washington, DC 20008 #12;DC WRRC Report No. 92 Directory of University Water Expertise of Columbia 4200 Connecticut Avenue, NW Washington, DC 20008 #12;DC-WRRC Report No. 92 DIRECTORY OF UNIVERSITY

District of Columbia, University of the

53

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Appliances",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total...

54

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Televisions",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total...

55

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Fuels Used and End Uses",,,,"VA","GA","FL",,"NC,...

56

" Million Housing Units, Final...  

U.S. Energy Information Administration (EIA) Indexed Site

U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Household Demographics",,,,"VA","GA","FL",,"NC,...

57

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

SciTech Connect (OSTI)

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

58

Rare Earth ? N = N* fs fGHZ fp nH fl  

E-Print Network [OSTI]

Rare Earth ? #12;N to date N = N* fs fGHZ fp nH fl ·N* = 4 x 1011 ·fs = 0.2 ·fGHZ = 0.1 ·fp = 0.8 ·nH = 2 ·fl = 1.0 N = 1.3 x 1010 #12;The Goldilocks Effect Earth is "Just Right" Yes, life on Earth has adapted to Earth, but ... Earth has just the right mass to be ·Tectonically-active ·Retain

Walter, Frederick M.

59

Active dc filter for HVDC systems  

SciTech Connect (OSTI)

This article is a case history of the installation of active dc filters for high-performance, low-cost harmonics filtering at the Lindome converter station in the Konti-Skan 2 HVDC transmission link between Denmark and Sweden. The topics of the article include harmonics, interference, and filters, Lindome active dc filter, active dc filter design, digital signal processor, control scheme, protection and fault monitoring, and future applications.

Zhang, W. (Royal Inst. of Tech., Stockholm (Sweden)); Asplund, G.

1994-01-01T23:59:59.000Z

60

New Architectures for Radio-Frequency DC-DC Power Conversion  

E-Print Network [OSTI]

This document proposes two new architectures for switched-mode dc–dc power conversion. The proposed architectures enable dramatic increases in switching frequency to be realized while preserving features critical in practice, ...

Rivas, Juan M.

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

DC to DC power conversion module for the all-electric ship  

E-Print Network [OSTI]

The MIT end to end electric ship model is being developed to study competing electric ship designs. This project produced a model of a Power Conversion Module (PCM)- 4, DC-to-DC converter which interfaces with the MIT ...

Gray, Weston L

2011-01-01T23:59:59.000Z

62

Computer-aided optimization of DC/DC converters for automotive applications  

E-Print Network [OSTI]

This paper investigates computer-aided optimization of DC/DC converters, with a focus on converters for dual-voltage automotive electrical systems. A new CAD optimization approach based on Monte Carlo search methods is ...

Neugebauer, Timothy C.

63

Program stat3d.c /* Program: stat3d.c */  

E-Print Network [OSTI]

85 Program stat3d.c /************************************************************************/ /* */ /* Program: stat3d.c */ /* Purpose: To read in a 3-D image and output phase volumes */ /* and report("Phase Volume Surface Volume Surface \

Bentz, Dale P.

64

High efficiency resonant dc/dc converter for solar power applications  

E-Print Network [OSTI]

This thesis presents a new topology for a high efficiency dc/dc resonant power converter that utilizes a resistance compression network to provide simultaneous zero voltage switching and near zero current switching across ...

Inam, Wardah

2013-01-01T23:59:59.000Z

65

THE FLORIDA STATE UNIVERSITY * THE GRADUATE SCHOOL * 314 WESTCOTT * TALLAHASSEE, FL. 32306-1410 Florida State University  

E-Print Network [OSTI]

THE FLORIDA STATE UNIVERSITY * THE GRADUATE SCHOOL * 314 WESTCOTT * TALLAHASSEE, FL. 32306 to gs-drg@admin.fsu.edu: Florida State University The Graduate School 314 Westcott Building Tallahassee be carried over. #12;THE FLORIDA STATE UNIVERSITY * THE GRADUATE SCHOOL * 314 WESTCOTT * TALLAHASSEE, FL

66

THE FLORIDA STATE UNIVERSITY * THE GRADUATE SCHOOL * 408 WESTCOTT * TALLAHASSEE, FL. 32306-1410 Florida State University  

E-Print Network [OSTI]

THE FLORIDA STATE UNIVERSITY * THE GRADUATE SCHOOL * 408 WESTCOTT * TALLAHASSEE, FL. 32306 Fellowship ­ Fall 2011 408 Westcott Building Tallahassee, Florida 32306-1410 Deadline The application STATE UNIVERSITY * THE GRADUATE SCHOOL * 408 WESTCOTT * TALLAHASSEE, FL. 32306-1410 Fall 2011 ***FOUR

Bowers, Philip L.

67

INTRODUCTION Since Zadeh [20] introduced Fuzzy Sets, many discussions have taken place whether Fuzzy Logic (FL) deserves a place  

E-Print Network [OSTI]

Fuzzy Logic (FL) deserves a place in control theory. Three properties speak in favour of FL control larger than the true maximal input for a system, Fuzzy Logic Controllers (FLC) by nature restrict A j x µ j x ( ) NLQ THEORY BASED STABILITY ANALYSIS OF SISO FUZZY LOGIC CONTROLLERS J�RGEN VAN GORP

68

Catalog of DC Appliances and Power Systems  

E-Print Network [OSTI]

48V DC , depending on battery bank configuration. Lifetime:Characteristics: Lead-acid battery banks are composed ofto produce the desired battery bank voltage. Typical battery

Garbesi, Karina

2012-01-01T23:59:59.000Z

69

26 Tesla DC Magnet for Neutron Scattering  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Previously, DC Magnets located at Neutron-Scattering Beamlines were commercially-manufactured superconducting magnets and limited to 17 T. A few pulsed magnet systems have been...

70

Machine Learning, ??, 1--6 (1994) fl 1994 Kluwer Academic Publishers, Boston. Manufactured in The Netherlands.  

E-Print Network [OSTI]

Machine Learning, ??, 1--6 (1994) c fl 1994 Kluwer Academic Publishers, Boston. Manufactured in The Netherlands. Book Review: C4.5: Programs for Machine Learning by J. Ross Quinlan. Morgan Kaufmann Publishers are among the most well known and widely used of all machine learning methods. Among decision tree

Salzberg, Steven

71

FL47CH15-Goldstein ARI 25 November 2014 9:45 Green Algae as Model  

E-Print Network [OSTI]

FL47CH15-Goldstein ARI 25 November 2014 9:45 Green Algae as Model Organisms for Biological Fluid green algae, spanning from the unicellular Chlamydomonas to multicellular Volvox, have emerged as model of flagellar synchronization. Green algae are well suited to the study of such problems because of their range

Goldstein, Raymond E.

72

Deciduous Fruit Options for North FL Landscapes by Terry DelValle, Urban Horticulture Extension Agent  

E-Print Network [OSTI]

Deciduous Fruit Options for North FL Landscapes by Terry DelValle, Urban Horticulture Extension your homework first. Site Selection: Here is a list of criteria. Fruit require an open sunny spot/variety will get at matur- ity. Selecting Varieties: Select varieties adapted to our area. Deciduous fruit, also

Watson, Craig A.

73

Department of Ocean and Mechanical Engineering 777 Glades Road, Boca Raton, FL 33431  

E-Print Network [OSTI]

Department of Ocean and Mechanical Engineering 777 Glades Road, Boca Raton, FL 33431 561.297.3430, fax 561.297.3885 SeaTech ­ The Institute for Ocean & Systems Engineering 101 North Beach Road, Dania of Ocean and Mechanical Engineering at Florida Atlantic University is pleased to announce fellowship

Fernandez, Eduardo

74

DOE Zero Energy Ready Home Case Study, e2Homes, Winterpark, FL, Custom Homes  

Broader source: Energy.gov [DOE]

Case study of a DOE Zero Energy Ready Home in Winter Park, FL that scored HERS 57 without PV or HERS -7 with PV. This 4,305 ft2 custom home has autoclaved aerated concrete walls, a sealed attic with R-20 spray foam, and ductless mini-split heat pumps.

75

ARTM E. MASUNOV 12424 Research Parkway, Suite 400, Orlando, FL 32826 USA  

E-Print Network [OSTI]

Professor, NanoScience Technology Center, Department of Chemistry, Department of Physics & Florida Solar Energy Center, University of Central Florida, FL (UCF) 2002-2005: Postdoctoral Research Associate, Russia (with Prof. P. M. Zorkii) #12;Dr. Artëm E. Masunov, UCF NSTC 2 Professional Societies: - American

Kik, Pieter

76

25th AIAA Applied Aerodynamics Conference June 2528, 2007/Miami, FL  

E-Print Network [OSTI]

25th AIAA Applied Aerodynamics Conference June 25­28, 2007/Miami, FL Validation Study of Aerodynamic Analysis Tools for Design Optimization of Helicopter Rotors Seongim Choi , Juan J. Alonso , Edwin current aerodynamic analysis tools in predicting the unsteady flow field generated by helicopter rotors

Alonso, Juan J.

77

St. Petersburg, FL: Vehicle Use of Recycled Natural Gas Derived from Wastewater Biosolids  

Broader source: Energy.gov [DOE]

Breakout Session 3A—Conversion Technologies III: Energy from Our Waste—Will we Be Rich in Fuel or Knee Deep in Trash by 2025? St. Petersburg, FL: Vehicle Use of Recycled Natural Gas Derived from Wastewater Biosolids William Eleazer, Supervising Engineer, Brown and Caldwell

78

DC-based magnetic field controller  

DOE Patents [OSTI]

A magnetic field controller for laboratory devices and in particular to dc operated magnetic field controllers for mass spectrometers, comprising a dc power supply in combination with improvements to a hall probe subsystem, display subsystem, preamplifier, field control subsystem, and an output stage.

Kotter, Dale K. (Shelley, ID); Rankin, Richard A. (Ammon, ID); Morgan, John P,. (Idaho Falls, ID)

1994-01-01T23:59:59.000Z

79

DC-based magnetic field controller  

DOE Patents [OSTI]

A magnetic field controller is described for laboratory devices and in particular to dc operated magnetic field controllers for mass spectrometers, comprising a dc power supply in combination with improvements to a Hall probe subsystem, display subsystem, preamplifier, field control subsystem, and an output stage. 1 fig.

Kotter, D.K.; Rankin, R.A.; Morgan, J.P.

1994-05-31T23:59:59.000Z

80

Testing a GaAs cathode in SRF gun  

SciTech Connect (OSTI)

RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating gradient of the RF guns, potentially offering a long lived cathode with very low emittance. Testing this concept requires preparation of the cathode, transportation to the SRF gun and evaluation of the performance of the cathode and the gun at cryogenic temperatures. In our work at BNL, we successfully activated the bulk GaAs in the preparation chamber. The highest quantum efficient was 10% at 532 nm that fell to 0.5% after 100 hours. We explored three different ways to activate the GaAs. We verified that the GaAs photocathode remains stable for 30 hours in a 10{sup -11} Torr vacuum. Passing the photocathode through the low 10{sup -9} Torr transfer section in several seconds caused the QE to drop to 0.8%. The photocathode with 0.8% QE can be tested for the SRF gun. The gun and beam pipe were prepared and assembled. After baking at 200 C baking, the vacuum of the gun and beam pipe can sustain a low 10{sup -11} Torr at room temperature. The final test to extract electrons from the gun is ongoing. In this paper, we discuss our progress with this SRF gun and the results of the photocathode in preparation chamber and in magnet transfer line.

Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

2011-03-28T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

High voltage DC power supply  

DOE Patents [OSTI]

A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively. 7 figs.

Droege, T.F.

1989-12-19T23:59:59.000Z

82

High voltage DC power supply  

DOE Patents [OSTI]

A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively.

Droege, Thomas F. (Batavia, IL)

1989-01-01T23:59:59.000Z

83

DC Microgrids Scoping Study: Estimate of Technical and Economic...  

Energy Savers [EERE]

manufacturers, power system designers, and researchers are demonstrating and deploying DC power distribution systems for applications where the end-use loads are natively DC, e.g.,...

84

INL Efficiency and Security Testing of EVSE, DC Fast Chargers...  

Broader source: Energy.gov (indexed) [DOE]

INL Efficiency and Security Testing of EVSE, DC Fast Chargers, and Wireless Charging Systems INL Efficiency and Security Testing of EVSE, DC Fast Chargers, and Wireless Charging...

85

Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption ''grading'' and multiplication regions  

SciTech Connect (OSTI)

We have measured the frequency response of InP/ InGaAsP/InGaAs photodiodes with separate absorption, ''grading,'' and multiplication regions (SAGM-APD's) for a wide range (2 less than or equal to M/sub 0/ less than or equal to 35) of dc gains. The results are explained in terms of a theoretical model which incorporates the transit time of carriers through the depletion region, the RC time constant, the accumulation of holes at the valence band discontinuity of the heterojunction interfaces, and the gainbandwidth limit.

Campbell, J.C.; Dentai, A.G.; Holden, W.S.; Qua, G.J.

1985-11-01T23:59:59.000Z

86

Ga nanoparticle-enhanced photoluminescence of GaAs  

SciTech Connect (OSTI)

We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

2013-09-02T23:59:59.000Z

87

AlGaN/GaN-based power semiconductor switches  

E-Print Network [OSTI]

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

88

National Aeronautics and Space Administration Washington, DC  

E-Print Network [OSTI]

National Aeronautics and Space Administration Washington, DC NASA ADVISORY COUNCIL PLANETARY, including Discovery @15 and Satellites of the Outer Solar System. The next workshop, Planetary Atmospheres (GRAIL)--a lunar mission, Origins Spectral Interpretation, Resource Identification, and Security (OSIRIS

Rathbun, Julie A.

89

DC readout experiment in Enhanced LIGO  

E-Print Network [OSTI]

The two 4 km long gravitational wave detectors operated by the Laser Interferometer Gravitational-wave Observatory (LIGO) were modified in 2008 to read out the gravitational wave channel using the DC readout form of homodyne ...

Fricke, Tobin T

90

Hydrogen Storage Systems Analysis Working Group Meeting Argonne DC Offices  

E-Print Network [OSTI]

Hydrogen Storage Systems Analysis Working Group Meeting Argonne DC Offices L'Enfant Plaza, Washington, DC December 4, 2007 SUMMARY REPORT Compiled by Romesh Kumar Argonne National Laboratory Working Group Meeting December 4, 2007 Argonne DC Offices, L'Enfant Plaza, Washington, DC Meeting

91

DC WRRC Report No. 142 Directory of University Water Expertise  

E-Print Network [OSTI]

DC WRRC Report No. 142 Directory of University Water Expertise in the District of Columbia r DC.B. 5004 Washington, D.C. 20008 #12;DC WRRC Report No. 142 Directory of University Water Expertise ............ 26 FACULTY INDEX .......................................... 29 DIRECTORY UPDATE FORM

District of Columbia, University of the

92

Phase-Shifted Full Bridge DC-DC Converter with Energy Recovery Clamp and Reduced Circulating Current  

E-Print Network [OSTI]

of the switch conduction and turn-off losses achieved by an energy recovery secondary clamp circuit an improved PSFB DC-DC converter using only a modified energy recovery clamp circuit attached at the secondaryPhase-Shifted Full Bridge DC-DC Converter with Energy Recovery Clamp and Reduced Circulating

93

FC/Battery Power Management for Electric Vehicle Based Interleaved dc-dc Boost Converter Topology  

E-Print Network [OSTI]

FC/Battery Power Management for Electric Vehicle Based Interleaved dc- dc Boost Converter Topology power systems in electric vehicle application, in order to decrease the FC current ripple. Therefore the performance of the FC system during transient and instantaneous peak power demands in electric vehicle

Paris-Sud XI, Université de

94

8798_FL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLasDelivered‰PNGExperience hands-onASTROPHYSICSHe β- Decay Evaluated7-IDRESEARCH SCIENTIFIC

95

DOE - Office of Legacy Management -- University of Miami - FL 0-01  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou areDowntown Site -Miami - FL 0-01 FUSRAP Considered

96

DOE - Office of Legacy Management -- Virginia-Carolina Chemical Corp - FL  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou areDowntown Site -Miami - FL06 Virginia-Carolina

97

File:USDA-CE-Production-GIFmaps-FL.pdf | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublicIDAPowerPlantSitingConstruction.pdfNotify98.pdf Jump to: navigation,storage plan reviewformP2.pdfFL.pdf Jump

98

New Experimental Data in DC745U  

SciTech Connect (OSTI)

The objectives of this project are: (1) study the molecular and mechanical properties of DC745U - (a) DC745U is a silicone elastomer used in several weapons systems, (b) depending on their chemistry and formulation, polymers can be susceptible to damage and failures due to weak chemical linkages and physical interactions, (c) inefficient production processes can generate heterogeneities throughout the material that can contribute negatively to the overall performance and lifetime of the polyer, (d) aging, long-term thermal and radioactive conditions, and mechanical strains can affect the materials network structure and contribute to the degradation of the production; (2) characterization of DC745U materials cured under different conditions to determine possible differences to the polymer structure; and (3) this work is relevant to mission-critical programs and for supporting programmatic work for weapon research.

Ortiz-Acosta, Denisse [Los Alamos National Laboratory; Cady, Carl [Los Alamos National Laboratory; Densmore, Crystal [Los Alamos National Laboratory

2012-06-18T23:59:59.000Z

99

Investigation of the GaN-on-GaAs interface for vertical power device applications  

SciTech Connect (OSTI)

GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

2014-07-07T23:59:59.000Z

100

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

DC High School Science Bowl Regionals | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

DC High School Science Bowl Regionals DC High School Science Bowl Regionals February 22, 2014 1:15PM to 8:15PM EST Department of Energy headquarters - 1000 Independence Ave SW,...

102

National Science Bowl Brings Best and Brightest to DC | Department...  

Broader source: Energy.gov (indexed) [DOE]

National Science Bowl Brings Best and Brightest to DC National Science Bowl Brings Best and Brightest to DC April 24, 2012 - 11:14am Addthis The National Science Bowl is the...

103

National Small Business Federal Contracting Summit-DC Fall Conference...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

National Small Business Federal Contracting Summit-DC Fall Conference National Small Business Federal Contracting Summit-DC Fall Conference November 6, 2014 8:00AM to 4:00PM EST...

104

Federal Government Congressional Budget Office, Budget Analysis Division Washington, DC  

E-Print Network [OSTI]

Administration, Center for Drug Evaluation and Research Washington, DC Federal Energy Regulatory CommissionFederal Government Congressional Budget Office, Budget Analysis Division Washington, DC Department Environmental Protection Agency, Office of Transportation & Air Quality Ann Arbor, MI Federal Drug

Shyy, Wei

105

achyrocline satureioides dc: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and DC, microgrid, with its definition as a local grid that comprises distributed generation, energy storage systems to the frequency in the AC bulk grid, the DC voltage in the...

106

Halbach array DC motor/generator  

DOE Patents [OSTI]

A new configuration of DC motor/generator is based on a Halbach array of permanent magnets. This motor does not use ferrous materials so that the only losses are winding losses and losses due to bearings and windage. An "inside-out" design is used as compared to a conventional motor/generator design. The rotating portion, i.e., the rotor, is on the outside of the machine. The stationary portion, i.e., the stator, is formed by the inside of the machine. The rotor contains an array of permanent magnets that provide a uniform field. The windings of the motor are placed in or on the stator. The stator windings are then "switched" or "commutated" to provide a DC motor/generator much the same as in a conventional DC motor. The commutation can be performed by mechanical means using brushes or by electronic means using switching circuits. The invention is useful in electric vehicles and adjustable speed DC drives.

Merritt, Bernard T. (Livermore, CA); Dreifuerst, Gary R. (Livermore, CA); Post, Richard F. (Walnut Creek, CA)

1998-01-01T23:59:59.000Z

107

Halbach array DC motor/generator  

DOE Patents [OSTI]

A new configuration of DC motor/generator is based on a Halbach array of permanent magnets. This motor does not use ferrous materials so that the only losses are winding losses and losses due to bearings and windage. An ``inside-out`` design is used as compared to a conventional motor/generator design. The rotating portion, i.e., the rotor, is on the outside of the machine. The stationary portion, i.e., the stator, is formed by the inside of the machine. The rotor contains an array of permanent magnets that provide a uniform field. The windings of the motor are placed in or on the stator. The stator windings are then ``switched`` or ``commutated`` to provide a DC motor/generator much the same as in a conventional DC motor. The commutation can be performed by mechanical means using brushes or by electronic means using switching circuits. The invention is useful in electric vehicles and adjustable speed DC drives. 17 figs.

Merritt, B.T.; Dreifuerst, G.R.; Post, R.F.

1998-01-06T23:59:59.000Z

108

FEDERAL ENERGY WASHINGTON, D.C. 20426  

E-Print Network [OSTI]

FEDERAL ENERGY REGULATORY COMMISSION WASHINGTON, D.C. 20426 NEWS RELEASE NEWS MEDIA CONTACT judge, the Federal Energy Regulatory Commission today ordered an expedited fact-finding hearing of the discussions. #12;Chairman Curt L. Hébert, Jr. stated as follows: "At some point, regulatory and R-01-33 (more

Laughlin, Robert B.

109

Energy Training Session for DC Elementary School Teachers  

Broader source: Energy.gov [DOE]

Are you an elementary school teacher in Washington, DC, looking for creative ideas to introduce energy curriculum to your students?

110

A Three-Phase Bidirectional DC-DC Converter for Automotive Applications  

SciTech Connect (OSTI)

This paper presents a three-phase soft-switching, bidirectional dc-dc converter for high-power automotive applications. The converter employs dual three-phase active bridges and operates with a novel asymmetrical but fixed duty cycle for the top and bottom switches of each phase leg. Simulation and experimental data on a 6-kW prototype are included to verify the novel operating and power flow control principles.

Su, Gui-Jia [ORNL; Tang, Lixin [ORNL

2008-01-01T23:59:59.000Z

111

Aalborg Universitet Hierarchical Control for Multiple DC Microgrids Clusters  

E-Print Network [OSTI]

Aalborg Universitet Hierarchical Control for Multiple DC Microgrids Clusters Shafiee, Qobad Control for Multiple DC Microgrids Clusters. I E E E Transactions on Energy Conversion. General rights, J. C. Vasquez, and J. M. Guerrero, "Hierarchical Control for Multiple DC-Microgrids Clusters," IEEE

Vasquez, Juan Carlos

112

Transportation YOU 2013 DC Youth Summit WTS Transportation YOU  

E-Print Network [OSTI]

Transportation YOU 2013 DC Youth Summit WTS Transportation YOU CTS Research Conference May 21, 2014 Lisa Rasmussen, WTS / Kimley-Horn and Associates, Inc #12;Transportation YOU 2013 DC Youth SummitTransportation YOU 2013 DC Youth Summit Agenda What is Transportation YOU? Transportation YOU ­ WTS Local Chapter

Minnesota, University of

113

A Cascade Multilevel Inverter Using a Single DC Source  

E-Print Network [OSTI]

A Cascade Multilevel Inverter Using a Single DC Source Zhong Du1, Leon M. Tolbert2 3, John N inverter can be implemented using only a single DC power source and capacitors. A standard cascade multilevel inverter requires DC sources for 2 + 1 levels. Without requiring transformers, the scheme proposed

Tolbert, Leon M.

114

SUBMITTED TO: THE D.C. WATER RESOURCES RESEARCH CENTER  

E-Print Network [OSTI]

chemicals and heavy metals such as lead'. Several published reports have suggested that D.C. public waterMARCH 1996 SUBMITTED TO: THE D.C. WATER RESOURCES RESEARCH CENTER UNIVERSITY OF THE DISTRICT OF COLUMBIA WASHINGTON, D.C. 20008 SUBMITTED BY: DR. KWAMENA OCRAN LEAD IN RESIDENTIAL DRINKING WATER: RISK

District of Columbia, University of the

115

Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets  

SciTech Connect (OSTI)

We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

2013-08-19T23:59:59.000Z

116

Machine Learning, 30, 241--273 (1998) fl 1998 Kluwer Academic Publishers, Boston. Manufactured in The Netherlands.  

E-Print Network [OSTI]

Machine Learning, 30, 241--273 (1998) c fl 1998 Kluwer Academic Publishers, Boston. Manufactured of a machine­aided knowledge discovery process within the general area of drug design. Within drug design study reported in this paper supports four general lessons for machine learning and knowledge discovery

Page Jr., C. David

117

NIF-0607-13692.ppt NIF Town Hall Meeting, June 16, 2007 1 Title page -APS, Orlando, FL, November 13,  

E-Print Network [OSTI]

NIF-0607-13692.ppt NIF Town Hall Meeting, June 16, 2007 1 Title page - APS, Orlando, FL, November 13, 2007 This work performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344 Fusion Power Associates Oak Ridge, Tn

118

Proceedings of the US Hydrographic Conference, Tampa, FL, 25-28 Apr 2011 THE PORT OF NORFOLK PROJECT  

E-Print Network [OSTI]

Proceedings of the US Hydrographic Conference, Tampa, FL, 25-28 Apr 2011 1 THE PORT OF NORFOLK for the Port of Norfolk Project are to explore viable methods of improvement with respect to both the process intuitive fashion, or providing it in a format that is inherently more useful. The Port of Norfolk Project

New Hampshire, University of

119

DC side filters for multiterminal HVDC systems  

SciTech Connect (OSTI)

Multiterminal HVDC systems present challenges in the specification and design of suitable dc side filtering. This document examines the existing experience and addresses the particular technical problems posed by multiterminal systems. The filtering requirements of small taps are discussed, as is the potential use of active filters. Aspects of calculation and design are considered and recommendations made to guide the planners and designers of future multiterminal schemes.

Shore, N.L.; Adamson, K.; Bard, P. [and others] [and others

1996-10-01T23:59:59.000Z

120

Good Energies (Washington DC) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio: Energy Resources Jump to:GloriaGoldenGolden,CookWashington DC) Jump

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Design and implementation of a scalable encryption processor with embedded variable dc/dc converter  

E-Print Network [OSTI]

This work describes the design and implementation of an energy-efficient, scalable encryption processor that utilizes variable voltage supply techniques and a highefficiency embedded variable output DC/DC converter. The resulting implementation dissipates 134nJ/bit @ V DD = 2.5V, when encrypting at its maximum rate of 1Mb/s using a maximum datapath width of 512 bits. The embedded converter achieves an efficiency of 96 % at this peak load. The processor is 2-3 orders of magnitude more energy efficient than optimized assembly code running on a low-power processor such as the StrongARM. 2.

James Goodman; Anantha Chandrakasan; Abram P. Dancy

1999-01-01T23:59:59.000Z

122

DC-DC Converter Topology Assessment for Large Scale Distributed Photovoltaic Plant Architectures  

SciTech Connect (OSTI)

Distributed photovoltaic (PV) plant architectures are emerging as a replacement for the classical central inverter based systems. However, power converters of smaller ratings may have a negative impact on system efficiency, reliability and cost. Therefore, it is necessary to design converters with very high efficiency and simpler topologies in order not to offset the benefits gained by using distributed PV systems. In this paper an evaluation of the selection criteria for dc-dc converters for distributed PV systems is performed; this evaluation includes efficiency, simplicity of design, reliability and cost. Based on this evaluation, recommendations can be made as to which class of converters is best fit for this application.

Mohammed S. Agamy; Maja Harfman-Todorovic; Ahmed Elasser; Juan A. Sabate; Robert L. Steigerwald; Yan Jiang; Somasundaram Essakiappan

2011-07-01T23:59:59.000Z

123

Dc's blog | OpenEI Community  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address:011-DNA Jump to:52c8ff988c1 No38e4011f618b No revision hasDawesCountyNewDc's blog Home

124

RES D.C. | Department of Energy  

Office of Environmental Management (EM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "of Energy Power.pdf11-161-LNG |September 15,2015 | DepartmentLoans |QuerylNuclear Power Plant DocketRES D.C.

125

Fun D.C. Jobs for Physicists  

SciTech Connect (OSTI)

Physicists make valuable contributions in a wide variety of careers, including those in Washington. Many national challenges, including energy, innovation, and security, create a demand for technically-competent individuals across government. Clark will discuss some of the many programs in D.C. designed to attract the best and brightest minds, from grad-students to professors, from short-term assignments to whole new careers. These are great opportunities to use your expertise and enrich your knowledge of the broader scientific enterprise, all while serving society.

Clark Cully

2009-09-30T23:59:59.000Z

126

User:Dc | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revisionEnvReviewNonInvasiveExplorationUT-gTagusparkCalculator JumpUnitedBeowaweColin.mccormick JumpDbowers JumpDc

127

Sandia National Laboratories: DC power optimizers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 -the Mid-Infrared0EnergySandia Involves Wind-FarmCool EarthSafetyCzech RadioactiveDC

128

Wide input range DC-DC converter with digital control scheme  

E-Print Network [OSTI]

boost converter a battery or ultracapacitor energy storage is connected to take care of the fuel cell slow transient response (200 watts/min). The robust features of the proposed control system ensure a constant output DC voltage for a variety of load...

Harfman Todorovic, Maja

2006-04-12T23:59:59.000Z

129

XL-DC/Mark V Options You can customize the XL-DC and Mark V  

E-Print Network [OSTI]

administrator with the NTP Time Server Protocol, network status, and statistics. This feature implements SNMP. XL-DC Mark V Network Time Server Telecommunications Interface Frequency Measurement STD Time Interface Low Phase Noise Output Network Interface Loss of Lock Alarm STD Programmable Pulse Output

Berns, Hans-Gerd

130

Washington DC Reliability Requirements and the Need to Operate...  

Broader source: Energy.gov (indexed) [DOE]

Washington DC Reliability Requirements and the Need to Operate Mirant's Potomac River Generation Station to Support Local Area Reliability (Oak Ridge National Laboratory 2005)...

131

PHOTOVOLTAIC DC ARC FAULT DETECTOR TESTING AT SANDIA NATIONAL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

PHOTOVOLTAIC DC ARC FAULT DETECTOR TESTING AT SANDIA NATIONAL LABORATORIES Jay Johnson 1 , Birger Pahl 2 , Charles Luebke 2 , Tom Pier 2 , Theodore Miller 3 , Jason Strauch 1 ,...

132

DC Resistivity Survey (Wenner Array) At Mt Princeton Hot Springs...  

Open Energy Info (EERE)

Determination of groundwater flux patterns Notes Researchers measured DC resistivity and produced 12 resistivity profiles, each approximately 1.3 km in length. Equilibrium...

133

DC Bus Capacitor Manufacturing Facility for Electric Drive Vehicles...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

0 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C. apearravt028boan2010...

134

Energy Challenge Two: The WeatherizeDC Campaign | Department...  

Broader source: Energy.gov (indexed) [DOE]

economic and environmental justice by creating clean energy career opportunities for people who need them most. The DC Project applies cutting-edge organizing tools and tactics...

135

Comparison of Chloroflexus aurantiacus strain J-10-fl proteomes of cells grown chemoheterotrophically and photoheterotrophically  

SciTech Connect (OSTI)

Chloroflexus aurantiacus J-10-fl is a thermophilic green bacterium, a filamentous anoxygenic phototroph, and the model organism of the phylum Chloroflexi. We applied high-throughput, liquid chromatography-mass spectrometry in a global quantitative proteomics investigation of C. aurantiacus cells grown under oxic (chemoorganoheterotrophically) and anoxic (photoorganoheterotrophically) redox states. Our global analysis identified 13,524 high-confidence peptides that matched to 1,286 annotated proteins, 242 of which were either uniquely identified or significantly increased in abundance under anoxic culture conditions. Fifty-three of the 242 proteins are previously characterized photosynthesis-related proteins, including chlorosome proteins, proteins involved in the bacteriochlorophyll biosynthesis, 3-hydroxypropionate (3-OHP) CO2 fixation pathway, and components of electron transport chains. The remaining 190 proteins have not previously been reported. Of these, five proteins were found to be encoded by genes from a novel operon and observed only in photoheterotrophically grown cells. These proteins candidates may prove useful in further deciphering the phototrophic physiology of C. aurantiacus and other filamentous anoxygenic phototrophs.

Cao, Li; Bryant, Donald A.; Schepmoes, Athena A.; Vogl, Kajetan; Smith, Richard D.; Lipton, Mary S.; Callister, Stephen J.

2012-01-17T23:59:59.000Z

136

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect (OSTI)

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

137

EE443L Lab 2: Modeling a DC Motor Introduction  

E-Print Network [OSTI]

: In this lab we will develop and validate a basic model of a permanent magnet DC motor (Yaskawa Electric MINI: The DC motor is a common actuator in control systems that converts electrical energy into rotational Procedure: Through the following steps, motor parameters for the Yaskawa Electric MINI-Minertia motor

Wedeward, Kevin

138

Read-out electronics for DC squid magnetic measurements  

DOE Patents [OSTI]

Read-out electronics for DC SQUID sensor systems, the read-out electronics incorporating low Johnson noise radio-frequency flux-locked loop circuitry and digital signal processing algorithms in order to improve upon the prior art by a factor of at least ten, thereby alleviating problems caused by magnetic interference when operating DC SQUID sensor systems in magnetically unshielded environments.

Ganther, Jr., Kenneth R. (Olathe, KS); Snapp, Lowell D. (Independence, MO)

2002-01-01T23:59:59.000Z

139

ELECTROMAGNETIC RADIATION FROM A STRONG DC ELECTRIC FIELD  

E-Print Network [OSTI]

ELECTROMAGNETIC RADIATION FROM A STRONG DC ELECTRIC FIELD Manuel G¨udel 1 and Donat G. Wentzel 2 1 accelerated by a strong dc electric field show not only very efficient generation of beam waves but also emission of o­mode radiation. We present a set of particle simulations for which we study the behavior

Guedel, Manuel

140

Dynamic microscopic theory of fusion using DC-TDHF  

SciTech Connect (OSTI)

The density-constrained time-dependent Hartree-Fock (DC-TDHF) theory is a fully microscopic approach for calculating heavy-ion interaction potentials and fusion cross sections below and above the fusion barrier. We discuss recent applications of DC-TDHF method to fusion of light and heavy systems.

Umar, A. S.; Oberacker, V. E.; Keser, R.; Maruhn, J. A.; Reinhard, P.-G. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); RTE University, Science and Arts Faculty, Department of Physics, 53100, Rize (Turkey); Institut fuer Theoretische Physik, Goethe-Universitaet, D-60438 Frankfurt am Main (Germany); Institut fur Theoretische Physik, Universitat Erlangen, D-91054 Erlangen (Germany)

2012-10-20T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

An Economic Impact Analysis of DC Drinking Water Quality  

E-Print Network [OSTI]

An Economic Impact Analysis of DC Drinking Water Quality Annual Progress Report for FY 2005 In January 2004, District of Columbia residents learned the drinking water supplied by the D.C. Water immediately responded by forming the Interagency Task Force on Lead in Drinking Water (The Task Force

District of Columbia, University of the

142

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect (OSTI)

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

143

Historical Material Analysis of DC745U Pressure Pads  

SciTech Connect (OSTI)

As part of the Enhance Surveillance mission, it is the goal to provide suitable lifetime assessment of stockpile materials. This report is an accumulation of historical publication on the DC745U material and their findings. It is the intention that the B61 LEP program uses this collection of data to further develop their understanding and potential areas of study. DC745U is a commercially available silicone elastomer consisting of dimethyl, methyl-phenyl, and methyl-vinyl siloxane repeat units. Originally, this material was manufactured by Dow Corning as Silastic{reg_sign} DC745U at their manufacturing facility in Kendallville, IN. Recently, Dow Corning shifted this material to the Xiameter{reg_sign} brand product line. Currently, DC745U is available through Xiameter{reg_sign} or Dow Corning's distributor R. D. Abbott Company. DC745U is cured using 0.5 wt% vinyl-specific peroxide curing agent known as Luperox 101 or Varox DBPH-50. This silicone elastomer is used in numerous parts, including two major components (outer pressure pads and aft cap support) in the W80 and as pressure pads on the B61. DC745U is a proprietary formulation, thus Dow Corning provides limited information on its composition and properties. Based on past experience with Dow Corning, DC745U is at risk of formulation changes without notification to the costumer. A formulation change for DC745U may have a significant impact because the network structure is a key variable in determining material properties. The purpose of this report is to provide an overview of historical DC745U studies and identify gaps that need to be addressed in future work. Some of the previous studies include the following: 1. Spectroscopic characterization of raw gum stock. 2. Spectroscopic, thermal, and mechanical studies on cured DC745U. 3. Nuclear Magnetic Resonance (NMR) and solvent swelling studies on DC745U with different crosslink densities. 4. NMR, solvent swelling, thermal, and mechanical studies on thermally aged DC745U. 5. NMR, solvent swelling, thermal, and mechanical studies on radiolytically aged DC745U. Each area is reviewed and further work is suggested to improve our understanding of DC745U for systems engineering, surveillance, aging assessments, and lifetime assessment.

Ortiz-Acosta, Denisse [Los Alamos National Laboratory

2012-07-30T23:59:59.000Z

144

Stabilization of unstable periodic orbits in dc drives  

E-Print Network [OSTI]

Electric drive using dc shunt motor or permanent magnet dc (PMDC) motor as prime mover exhibits bifurcation and chaos. The characteristics of dc shunt and PMDC motors are linear in nature. These motors are controlled by pulse width modulation (PWM) technique with the help of semiconductor switches. These switches are nonlinear element that introduces nonlinear characteristics in the drive. Any nonlinear system can exhibit bifurcation and chaos. dc shunt or PMDC drives show normal behavior with certain range of parameter values. It is also observed that these drive show chaos for significantly large ranges of parameter values. In this paper we present a method for controlling chaos applicable to dc shunt and PMDC drives. The results of numerical investigation are presented.

Krishnendu Chakrabarty; Urmila Kar

2014-02-22T23:59:59.000Z

145

Dissipative Cryogenic Filters with Zero DC Resistance  

SciTech Connect (OSTI)

The authors designed, implemented and tested cryogenic RF filters with zero DC resistance, based on wires with a superconducting core inside a resistive sheath. The superconducting core allows low frequency currents to pass with negligible dissipation. Signals above the cutoff frequency are dissipated in the resistive part due to their small skin depth. The filters consist of twisted wire pairs shielded with copper tape. Above approximately 1 GHz, the attenuation is exponential in {radical}{omega}, as typical for skin depth based RF filters. By using additional capacitors of 10 nF per line, an attenuation of at least 45 dB above 10 MHz can be obtained. Thus, one single filter stage kept at mixing chamber temperature in a dilution refrigerator is sufficient to attenuate room temperature black body radiation to levels corresponding to 10 mK above about 10 MHz.

Bluhm, Hendrik; Moler, Kathryn A.; /Stanford U., Appl. Phys. Dept

2008-04-22T23:59:59.000Z

146

DC, AC and advanced EV propulsion systems  

SciTech Connect (OSTI)

Battery development and liquid fuel availability and cost are still the pacing factors in wide scale electric vehicle introduction. Propulsion systems also require technical development, however, if electric vehicles are to be acceptable in the marketplace in competition against ICE vehicles. Eaton Corporation has undertaken a program designed to identify and investigate three broad types of propulsion systems in identical test vehicles on the same test track under conditions as similar as possible. Characteristics of dc, ac and advanced systems are compared to date, and projections of anticipated results and further work are provided. The compelling advantages of multiple mechanical ratios in EV propulsion systems are reviewed. An emerging, but less obvious, advantage is higher overall system efficiency.

O'Neil, W.

1983-08-01T23:59:59.000Z

147

Abstract --A systematic framework for reliability assessment and fault-tolerant design of multiphase dc-dc  

E-Print Network [OSTI]

reliability. Index Terms--Markov reliability modeling, maximum power point tracking, photovoltaics, switch1 Abstract -- A systematic framework for reliability assessment and fault-tolerant design of multiphase dc-dc converters deployed in photovoltaic applications is presented. System-level steady

Liberzon, Daniel

148

Annual Meeting of Energy Recovery Council, W hi DC D b 3 2011Washington DC, December 3. 2011  

E-Print Network [OSTI]

Annual Meeting of Energy Recovery Council, W hi DC D b 3 2011Washington DC, December 3. 2011 to the recyclers (e.g. metal smelters; secondary paper mills).(e.g. metal smelters; secondary paper mills). All, recovery (called WastetoEnergy; WTE) gy, , y ( gy; ) · All countries (and communities) who rely on WTE also

Columbia University

149

GA Solar | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGA SNC Solar Jump to:GA-Solar

150

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network [OSTI]

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

Atwater, Harry

151

Native point defects in GaSb  

SciTech Connect (OSTI)

We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.

Kujala, J.; Segercrantz, N.; Tuomisto, F.; Slotte, J. [Department of Applied Physics, Aalto University School of Science, P.O. Box 14100, FI-00076 AALTO (Finland)

2014-10-14T23:59:59.000Z

152

We Have a Winner - DC High School Regional Science Bowl Competition...  

Office of Environmental Management (EM)

We Have a Winner - DC High School Regional Science Bowl Competition Held Last Saturday We Have a Winner - DC High School Regional Science Bowl Competition Held Last Saturday...

153

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

SciTech Connect (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

154

Beta decay of Ga-62  

E-Print Network [OSTI]

from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

155

Implementing the DC Mode in Cosmological Simulations with Supercomoving Variables  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

As emphasized by previous studies, proper treatment of the density fluctuation on the fundamental scale of a cosmological simulation volume - the 'DC mode' - is critical for accurate modeling of spatial correlations on scales ~> 10% of simulation box size. We provide further illustration of the effects of the DC mode on the abundance of halos in small boxes and show that it is straightforward to incorporate this mode in cosmological codes that use the 'supercomoving' variables. The equations governing evolution of dark matter and baryons recast with these variables are particularly simple and include the expansion factor, and hence the effect of the DC mode, explicitly only in the Poisson equation.

Gnedin, Nickolay Y.; Kravtsov, Andrey V.; Rudd, Douglas H.

2011-06-02T23:59:59.000Z

156

Fractal Inspired Models of Quark and Gluon Distributions and Longitudinal Structure Function FL(x, Q2) at small x  

E-Print Network [OSTI]

In recent years, Fractal Inspired Models of quark and gluon densities at small x have been proposed. In this paper, we investigate longitudinal structure function F-L (x, Q2) within this approach. We make predictions using the QCD based approximate relation between the longitudinal structure function and the gluon density. As the Altarelli-Martinelli equation for the longitudinal structure function cannot be applied to Model I due to the presence of a singularity in the Bjorken x-space we consider Model II only. The qualitative feature of the prediction of Model II is found to be compatible with the QCD expectation.

Akbari Jahan; D. K. Choudhury

2010-12-30T23:59:59.000Z

157

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

158

Counterrotating brushless dc permanent magnet motor  

SciTech Connect (OSTI)

An brushless DC permanent magnet motor is provided for driving an autonomous underwater vehicle. In one embodiment, the motor comprises four substantially flat stators disposed in stacked relationship, with pairs of the stators being axially spaced and each of the stators comprising a tape-wound stator coil; and a first and second substantially flat rotors disposed between the spaced pairs of stators. Each of the rotors includes an annular array of permanent magnets embedded therein. A first shaft is connected to the first rotor and a second, concentric shaft is connected to the second rotor, and drive unit causes rotation of the two shafts in opposite directions. The second shaft comprises a hollow tube having a central bore therein in which the first shaft is disposed. Two different sets of bearings support the first and second shAfts. In another embodiment, the motor comprises two ironless stators and pairs and rotors mounted no opposite sides of the stators and driven by counterrotating shafts.

Hawsey, R.A.; Bailey, J.M.

1990-12-31T23:59:59.000Z

159

Counterrotating brushless dc permanent magnet motor  

SciTech Connect (OSTI)

An brushless DC permanent magnet motor is provided for driving an autonomous underwater vehicle. In one embodiment, the motor comprises four substantially flat stators disposed in stacked relationship, with pairs of the stators being axially spaced and each of the stators comprising a tape-wound stator coil; and a first and second substantially flat rotors disposed between the spaced pairs of stators. Each of the rotors includes an annular array of permanent magnets embedded therein. A first shaft is connected to the first rotor and a second, concentric shaft is connected to the second rotor, and drive unit causes rotation of the two shafts in opposite directions. The second shaft comprises a hollow tube having a central bore therein in which the first shaft is disposed. Two different sets of bearings support the first and second shAfts. In another embodiment, the motor comprises two ironless stators and pairs and rotors mounted no opposite sides of the stators and driven by counterrotating shafts.

Hawsey, R.A.; Bailey, J.M.

1990-01-01T23:59:59.000Z

160

Radiofrequency amplifier based on a dc superconducting quantum interference device  

DOE Patents [OSTI]

A low noise radiofrequency amplifier (10), using a dc SQUID (superconducting quantum interference device) as the input amplifying element. The dc SQUID (11) and an input coil (12) are maintained at superconductivity temperatures in a superconducting shield (13), with the input coil (12) inductively coupled to the superconducting ring (17) of the dc SQUID (11). A radiofrequency signal from outside the shield (13) is applied to the input coil (12), and an amplified radiofrequency signal is developed across the dc SQUID ring (17) and transmitted to exteriorly of the shield (13). A power gain of 19.5.+-.0.5 dB has been achieved with a noise temperature of 1.0.+-.0.4 K. at a frequency of 100 MHz.

Hilbert, Claude (Berkeley, CA); Martinis, John M. (Berkeley, CA); Clarke, John (Berkeley, CA)

1986-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Radiofrequency amplifier based on a dc superconducting quantum interference device  

DOE Patents [OSTI]

A low noise radiofrequency amplifer, using a dc SQUID (superconducting quantum interference device) as the input amplifying element. The dc SQUID and an input coil are maintained at superconductivity temperatures in a superconducting shield, with the input coil inductively coupled to the superconducting ring of the dc SQUID. A radiofrequency signal from outside the shield is applied to the input coil, and an amplified radiofrequency signal is developed across the dc SQUID ring and transmitted to exteriorly of the shield. A power gain of 19.5 +- 0.5 dB has been achieved with a noise temperature of 1.0 +- 0.4 K at a frequency of 100 MHz.

Hilbert, C.; Martinis, J.M.; Clarke, J.

1984-04-27T23:59:59.000Z

162

Washington, D.C. and Indiana: Allison Hybrid Technology Achieves...  

Broader source: Energy.gov (indexed) [DOE]

D.C. region, and demand continues to grow worldwide. The Washington Metropolitan Area Transit Authority (WMATA), with a total fleet of 1,480 buses, has more than 600 of them...

163

Modeling Microinverters and DC Power Optimizers in PVWatts  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and DC Power Optimizers in PVWatts Sara MacAlpine and Chris Deline National Renewable Energy Laboratory Technical Report NRELTP-5J00-63463 February 2015 NREL is a national...

164

InGaAsN/GaAs heterojunction for multi-junction solar cells  

DOE Patents [OSTI]

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

2001-01-01T23:59:59.000Z

165

Analysis of a transformer-less, multi-level DC-DC converter for HVDC operation  

SciTech Connect (OSTI)

HVDC systems require DC step up and DC step down units. The traditional approach is the application of twelve-pulse thyristor bridges with transformers. The developments of fast switching IGBT devices permit the development of transformer-less, multi-level converters. A multi-level circuit was suggested by Limpaecher. This paper presents a detailed simulation of the proposed circuit together with the analysis of its performance. The converter consists of a set of capacitors, air core inductors and solid state switches arranged in a ladder network. In the step-up mode, the closing of solid state switches resonantly charges the capacitors in parallel through an air-cored inductor. Then solid state switches resonantly charges the capacitors in parallel through an air-cored inductor. Then solid state switches connect the capacitors in series and discharge them through an air-core inductor to the load. In the step-down mode the capacitors are charged in series and discharged in parallel. The circuit has three modes of operation in each cycle: charge, inversion, and discharge. The circuit operation is analyzed in each mode using SPICE simulations. The selection of the components is discussed and output voltage regulation is analyzed. The results show that the proposed circuit promises significant reduction of losses, because of the zero current switching. The investment cost is reduced because of the elimination of transformers.

Karady, G.G.; Devarajan, S. [Arizona State Univ., Tempe, AZ (United States)

1998-12-31T23:59:59.000Z

166

A Low-Cost Soft-Switched DC/DC Converter for Solid-Oxide Fuel Cells  

SciTech Connect (OSTI)

A highly efficient DC to DC converter has been developed for low-voltage high-current solid oxide fuel cells. The newly developed 'V6' converter resembles what has been done in internal combustion engine that split into multiple cylinders to increase the output capacity without having to increase individual cell size and to smooth out the torque with interleaving operation. The development was started with topology overview to ensure that all the DC to DC converter circuits were included in the study. Efficiency models for different circuit topologies were established, and computer simulations were performed to determine the best candidate converter circuit. Through design optimization including topology selection, device selection, magnetic component design, thermal design, and digital controller design, a bench prototype rated 5-kW, with 20 to 50V input and 200/400V output was fabricated and tested. Efficiency goal of 97% was proven achievable through hardware experiment. This DC to DC converter was then modified in the later stage to converter 35 to 63 V input and 13.8 V output for automotive charging applications. The complete prototype was tested at Delphi with their solid oxide fuel cell test stand to verify the performance of the modified DC to DC converter. The output was tested up to 3-kW level, and the efficiency exceeded 97.5%. Multiple-phase interleaving operation design was proved to be reliable and ripple free at the output, which is desirable for the battery charging. Overall this is a very successful collaboration project between the SECA Core Technology Team and Industrial Team.

Jason Lai

2009-03-03T23:59:59.000Z

167

Analysis and design of a saturable reactor assisted soft-switching full-bridge dc-dc converter  

SciTech Connect (OSTI)

Analysis and design considerations for a saturable reactor assisted soft-switching full-bridge dc-dc converter are presented. The converter has advantages such as low switching losses with no substantial increase in conduction losses, wide load range, and constant frequency operation. To show how to utilize the analysis results, a 350-W, 500-kHz converter is chosen as a design example. The results are verified experimentally on a prototype converter.

Hamada, Satoshi (Sansha Electric Manufacturing Co., Ltd., Osaka (Japan)); Nakaoka, Mutsuo (Kobe Univ. (Japan). Dept. of Electrical and Electronics Engineering)

1994-05-01T23:59:59.000Z

168

A High Efficiency DC-DC Converter Topology Suitable for Distributed Large Commercial and Utility Scale PV Systems  

SciTech Connect (OSTI)

In this paper a DC-DC power converter for distributed photovoltaic plant architectures is presented. The proposed converter has the advantages of simplicity, high efficiency, and low cost. High efficiency is achieved by having a portion of the input PV power directly fed forward to the output without being processed by the converter. The operation of this converter also allows for a simplified maximum power point tracker design using fewer measurements

Mohammed S. Agamy; Maja Harfman-Todorovic; Ahmed Elasser; Robert L. Steigerwald; Juan A. Sabate; Song Chi; Adam J. McCann; Li Zhang; Frank Mueller

2012-09-01T23:59:59.000Z

169

Reid Rosnick/DC/USEPA/US 10/25/2012 11:54 AM  

E-Print Network [OSTI]

EPA-694 Reid Rosnick/DC/USEPA/US 10/25/2012 11:54 AM To Philip Egidi cc bcc Subject Re: Subpart W Pennsylvania Ave., NW Washington, DC 20460 202.343.9563 rosnick.reid@epa.gov -----Philip Egidi/DC/USEPA/US wrote: ----- To: Reid Rosnick/DC/USEPA/US@EPA From: Philip Egidi/DC/USEPA/US Date: 10/25/2012 11:41AM Cc

170

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect (OSTI)

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

171

Surface science analysis of GaAs photocathodes following sustained electron beam delivery  

SciTech Connect (OSTI)

Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power Free Electron Lasers (FEL). Photocathode quantum efficiency (QE) degradation is due to residual gasses in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes, which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include Helium Ion Microscopy (HIM), Rutherford Backscattering Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the Continuous Electron Beam Accelerator Facility (CEBAF) photoinjector and one unused, were also analyzed using Transmission Electron Microscopy (TEM) and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but shows evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.

Carlos Hernandez-Garcia, Fay Hannon, Marcy Stutzman, V. Shutthanandan, Z. Zhu, M. Nandasri, S. V. Kuchibhatla, S. Thevuthasan, W. P. Hess

2012-06-01T23:59:59.000Z

172

Entertainment Technology Center, CMU Internship Survey Results, Dec 2013, May 2014, and Dec 2014  

E-Print Network [OSTI]

Developer Mount Pleasant SC Visionary Works LLC UX Designer, Game Programmer Washington DC VOCI Technology, NM, OK, TX 2 West: CA, HI, NV 16 Southeast: AL, AR, FL, GA, KY, LA, MS, NC, PR, SC, TN 1 Midwest: IA Emails 28 Faculty Contacts 22 Personal Network 17 Interviews Arranged by Career Services 9 Intern Search

Matsuda, Noboru

173

Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs  

E-Print Network [OSTI]

AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

Gao, Feng, Ph. D. Massachusetts Institute of Technology

2014-01-01T23:59:59.000Z

174

Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA  

E-Print Network [OSTI]

Industrial Design ­ Shanghai, China Eaton Corporation ­ Pittsburgh, PA CMU, CTTEC ­ PittsburghSiemens ­ Pittsburgh, PA Novelis Corporation ­ Atlanta, GA Expense

McGaughey, Alan

175

Spontaneous emission in GaN/InGaN photonic crystal nanopillars  

E-Print Network [OSTI]

. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

Boyer, Edmond

176

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

SciTech Connect (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

177

Zarillo, G. A., and Brehin, F. G. A. 2007. Hydrodynamic and Morphologic Modeling at Sebastian Inlet, FL. Proceedings Coastal Sediments '07 Conference, ASCE Press, Reston,  

E-Print Network [OSTI]

Inlet, FL. Proceedings Coastal Sediments '07 Conference, ASCE Press, Reston, VA, 1297-1310. HYDRODYNAMIC Modeling System (CMS) to investigate the morphological response to time varying forcing, sediment texture evolution of tidal inlet shoals is an important management tool, since they control sediment budgets. Inlet

US Army Corps of Engineers

178

Embracing and Empowering Women to Serve Central Florida PO BOX 2895 Orlando FL 32802 ! wecOrlando.com ! facebook.com/wecOrlando ! scholarships@wecOrlando.com  

E-Print Network [OSTI]

Orlando.com ! facebook.com/wecOrlando ! scholarships@wecOrlando.com 42nd ANNUAL WOMEN'S ACHIEVEMENT AWARDS EVENT Monday Orlando FL 32802 ! wecOrlando.com ! facebook.com/wecOrlando ! scholarships@wecOrlando.com All information 32802 ! wecOrlando.com ! facebook.com/wecOrlando ! scholarships@wecOrlando.com Please provide three (3

Van Stryland, Eric

179

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...

180

DESIGN OF A DC/RF PHOTOELECTRON GUN.  

SciTech Connect (OSTI)

An integrated dc/rf photoelectron gun produces a low-emittance beam by first rapidly accelerating electrons at a high gradient during a short ({approx}1 ns), high-voltage pulse, and then injecting the electrons into an rf cavity for subsequent acceleration. Simulations show that significant improvement of the emittance appears when a high field ({approx} 0.5-1 GV/m) is applied to the cathode surface. An adjustable dc gap ({le} 1 mm) which can be integrated with an rf cavity is designed for initial testing at the Injector Test Stand at Argonne National Laboratory using an existing 70-kV pulse generator. Plans for additional experiments of an integrated dc/rf gun with a 250-kV pulse generator are being made.

YU,D.NEWSHAM,Y.SMIRONOV,A.YU,J.SMEDLEY,J.SRINIVASAN RAU,T.LEWELLEN,J.ZHOLENTS,A.

2003-05-12T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer  

SciTech Connect (OSTI)

It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

2008-01-01T23:59:59.000Z

182

Efficient Switches for Solar Power Conversion: Four Quadrant GaN Switch Enabled Three Phase Grid-Tied Microinverters  

SciTech Connect (OSTI)

Solar ADEPT Project: Transphorm is developing power switches for new types of inverters that improve the efficiency and reliability of converting energy from solar panels into useable electricity for the grid. Transistors act as fast switches and control the electrical energy that flows in an electrical circuit. Turning a transistor off opens the circuit and stops the flow of electrical current; turning it on closes the circuit and allows electrical current to flow. In this way a transistor can be used to convert DC from a solar panel into AC for use in a home. Transphorm’s transistors will enable a single semiconductor device to switch electrical currents at high-voltage in both directions—making the inverter more compact and reliable. Transphorm is using Gallium Nitride (GaN) as a semiconductor material in its transistors instead of silicon, which is used in most conventional transistors, because GaN transistors have lower losses at higher voltages and switching frequencies.

None

2012-02-13T23:59:59.000Z

183

Cl{sub 2}-based dry etching of the AlGaInN system in inductively coupled plasmas  

SciTech Connect (OSTI)

Cl{sub 2}-based Inductively Coupled Plasmas with low additional dc self- biases(-100V) produce convenient etch rates(500-1500 A /min) for GaN, AlN, InN, InAlN and InGaN. A systematic study of the effects of additive gas(Ar, N{sub 2}, H{sub 2}), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent Cl{sub 2} in the discharge for all three mixtures, and to have an increase(decrease) in etch rate with source power(pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained.

Cho, Hyun; Vartuli, C.B.; Abernathy, C.R.; Donovan, S.M.; Pearton, S.J. [Florida Univ., Gainesville, FL (United States). Dept. of Materials Science and Engineering; Shul, R.J.; Han, J. [Sandia National Labs., NM (United States)

1997-12-01T23:59:59.000Z

184

Active dc filter for HVDC system--A test installation in the Konti-Skan DC link at Lindome converter station  

SciTech Connect (OSTI)

The purpose of introducing active dc filters is to meet the more and more stringent requirement from power utilities on limiting telephone interference caused by harmonic currents from HVdc transmission lines, without unnecessarily increasing the cost of HVdc stations. An active dc filter installed in the Konti-Skan HVdc link is described. The active dc filter is connected at the bottom of an existing passive dc filter at the Lindome station. The active dc filter includes optic harmonic current measuring unit, control system, protection and supervision system, PWM power amplifier, high-frequency transformer, surge arrester, and coupling apparatuses. The active dc filter has small physical size and occupies small ground area. The performance of the active dc filter for eliminating the disturbing harmonics is excellent. To achieve comparable results by passive filters would require something like ten times more high voltage equipment.

Zhang, Wenyan; Asplund, G. (ABB Power Systems, Ludvika (Sweden). HVDC Division); Aberg, A. (ABB Corporate Research, Lund (Sweden). Dept. of Man-Machine Communication); Jonsson, U. (Svenska Kraftnaet, Vaellingby (Sweden)); Loeoef, O. (Vattenfall AB, Trollhaettan (Sweden). Region Vaestsverige)

1993-07-01T23:59:59.000Z

185

Application of direct pulsewidth modulation scheme to AC-DC converters: - a way to reduce ripple  

E-Print Network [OSTI]

Modulation (ISPWM), 4 Direct Pulsewidth Modulation (DPWM). 15 5 Single Phase Half Controlled PWM ac-dc Converter . 6 Single Phase Full controlled PWM ac-dc Converter . 18 18 7 Simulation of SPWM ac-dc Converter. 20 8 Output Voltage Spectra of SPWM ac... 30 Balanced Three Phase Inputs 31 Output Voltage of A Three Phase Full Controlled ac-dc SPWM Converter. 42 32 Output Voltage of A Three Phase Full Controlled ac-dc EPWM Con- verter 33 Output Voltage of A Three Phase Full Controlled ac-dc ISPWM Con...

Zhang, Yuemin

1993-01-01T23:59:59.000Z

186

Graphite electrode DC arc furnace. Innovative technology summary report  

SciTech Connect (OSTI)

The Graphite Electrode DC Arc Furnace (DC Arc) is a high-temperature thermal process, which has been adapted from a commercial technology, for the treatment of mixed waste. A DC Arc Furnace heats waste to a temperature such that the waste is converted into a molten form that cools into a stable glassy and/or crystalline waste form. Hazardous organics are destroyed through combustion or pyrolysis during the process and the majority of the hazardous metals and radioactive components are incorporated in the molten phase. The DC Arc Furnace chamber temperature is approximately 593--704 C and melt temperatures are as high as 1,500 C. The DC Arc system has an air pollution control system (APCS) to remove particulate and volatiles from the offgas. The advantage of the DC Arc is that it is a single, high-temperature thermal process that minimizes the need for multiple treatment systems and for extensive sorting/segregating of large volumes of waste. The DC Arc has the potential to treat a wide range of wastes, minimize the need for sorting, reduce the final waste volumes, produce a leach resistant waste form, and destroy organic contaminants. Although the DC arc plasma furnace exhibits great promise for treating the types of mixed waste that are commonly present at many DOE sites, several data and technology deficiencies were identified by the Mixed Waste Focus Area (MWFA) regarding this thermal waste processing technique. The technology deficiencies that have been addressed by the current studies include: establishing the partitioning behavior of radionuclides, surrogates, and hazardous metals among the product streams (metal, slag, and offgas) as a function of operating parameters, including melt temperature, plenum atmosphere, organic loading, chloride concentration, and particle size; demonstrating the efficacy of waste product removal systems for slag and metal phases; determining component durability through test runs of extended duration, evaluating the effect of feed composition variations on process operating conditions and slag product performance; and collecting mass balance and operating data to support equipment and instrument design.

NONE

1999-05-01T23:59:59.000Z

187

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network [OSTI]

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

188

High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs  

DOE Patents [OSTI]

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

Shimer, D.W.; Lange, A.C.

1995-05-23T23:59:59.000Z

189

High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs  

DOE Patents [OSTI]

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

Shimer, Daniel W. (Danville, CA); Lange, Arnold C. (Livermore, CA)

1995-01-01T23:59:59.000Z

190

Quantum efficiency temporal response and lifetime of a GaAs cathode in SRF electron gun  

SciTech Connect (OSTI)

RF electron guns with a strained super lattice GaAs cathode can generate polarized electron beam of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface. In a normal conducting RF gun, the extremely high vaccum required by these cathodes can not be met. We report on an experiment with a superconducting SRF gun, which can maintain a vacuum of nearly 10-12 torr because of cryo-pumping at the temperature of 4.2K. With conventional activation, we obtained a QE of 3% at 532 nm, with lifetime of nearly 3 days in the preparation chamber. We plan to use this cathode in a 1.3 GHz 1/2 cell SRF gun to study its performance. In addition, we studied the multipacting at the location of cathode. A new model based on the Forkker-Planck equation which can estimate the bunch length of the electron beam is discussed in this paper. Future particle accelerators such as eRHIC and ILC require high brightness, high current polarized electrons Recently, using a superlattice crystal, the maximum polarization of 95% was reached. Activation with Cs,O lowers the electron affinity and makes it energetically possible for all the electrons excited in to the conduction band and reach the surface to escape into the vacuum. Presently the polarized electron sources are based on DC gun, such as that at the CEBAF at Jlab. In these devices, the life time of the cathode is extended due to the reduced back bombardment in their UHV conditions. However, the low accelerating gradient of the DC guns lead to poor longitudinal emittance. The higher accelerating gradient of the RF gun generates low emittance beams. Superconducting RF guns combine the excellent vacuum conditions of the DC guns with the higher accelerating gradients of the RF guns and provide potentially a long lived cathode with very low transverse and longitudinal emittance. In our work at BNL, we successfully activated the GaAs. The quantum efficient is 3% at 532 nm and is expected to improve further. In addition, we studied the multipacting at the location of cathode. A new model based on the Forkker-Planck equation which can estimate the bunch length of the electron beam is discussed in this paper.

Wang, E.; Ben-Zvi, I.; Kewisch, J.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

2010-05-23T23:59:59.000Z

191

Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

192

Solar Decathlon at Home in the D.C. Community | Department of...  

Broader source: Energy.gov (indexed) [DOE]

at Home in the D.C. Community Solar Decathlon at Home in the D.C. Community December 4, 2012 - 4:25pm Addthis One of the new homeowners, Layika Culley, and her family cut the...

193

Analysis of Fe Nanoparticles Using XPS Measurements Under D.C...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Fe Nanoparticles Using XPS Measurements Under D.C. or Pulsed-Voltage Bias. Analysis of Fe Nanoparticles Using XPS Measurements Under D.C. or Pulsed-Voltage Bias. Abstract: The...

194

Energy Secretary Moniz's Remarks at CSIS in Washington D.C. on...  

Office of Environmental Management (EM)

Energy Secretary Moniz's Remarks at CSIS in Washington D.C. on Energy Security 40 Years after the Embargo - As Delivered Energy Secretary Moniz's Remarks at CSIS in Washington D.C....

195

D.C. Community Comes Together in the Name of Sustainability,...  

Broader source: Energy.gov (indexed) [DOE]

D.C. Community Comes Together in the Name of Sustainability, Affordability D.C. Community Comes Together in the Name of Sustainability, Affordability July 1, 2011 - 1:02pm Addthis...

196

Train the Teacher - Energy Workshops for DC-area Elementary School...  

Broader source: Energy.gov (indexed) [DOE]

Train the Teacher - Energy Workshops for DC-area Elementary School Teachers Train the Teacher - Energy Workshops for DC-area Elementary School Teachers May 2, 2014 1:00PM to 4:15PM...

197

E-Print Network 3.0 - average current dc Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

tronicsConfrenceAPC 92), Boston,February23-27,pp. 731-7j,. 1;2. A Resonant DC-DC Transformer Summary: State Operation. The steady state voltage and current waveforms when the...

198

Q&A: Kristen Psaki of WeatherizeDC | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Q&A: Kristen Psaki of WeatherizeDC April 15, 2010 - 3:45pm Addthis Roughly 20 percent of carbon emissions come from inefficient homes. The DC Project says it has found a way to...

199

Hybrid Multilevel Inverter with Single DC Haiwen Liu1  

E-Print Network [OSTI]

Hybrid Multilevel Inverter with Single DC Source Haiwen Liu1 , Leon M. Tolbert1, 2 , Burak Ozpineci Knoxville, TN 37932 3. Parker-Hannifin Corp. Olive Branch, MI 38654 Abstract- A hybrid multilevel inverter inverter (one leg for each phase) and H-bridge in series with each inverter leg. The inverter can be used

Tolbert, Leon M.

200

DC Optimal Power Flow: Uniqueness and Chee Wei Tan  

E-Print Network [OSTI]

and are computationally fast for practical smart power grids. I. BACKGROUND The Optimal Power Flow (OPF) problem network. The DC-OPF can be practically important in a smart grid, where there are renewables, e.g., solar implications on how algorithms can be designed to solve the OPF in a smart grid. Different from prior work

Tan, Chee Wei

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201

Natural Gas Pipeline Leaks Across Washington, DC Robert B. Jackson,,,  

E-Print Network [OSTI]

Natural Gas Pipeline Leaks Across Washington, DC Robert B. Jackson,,, * Adrian Down, Nathan G increased in recent decades, but incidents involving natural gas pipelines still cause an average of 17 fatalities and $133 M in property damage annually. Natural gas leaks are also the largest anthropogenic

Jackson, Robert B.

202

D.C. Water Resources Research Institute Annual Technical Report  

E-Print Network [OSTI]

projects that address the three components of integrated urban water system: storm water runoff and sewer developing and maintaining new environmental quality testing and modeling tools to advance water researchD.C. Water Resources Research Institute Annual Technical Report FY 2013 D.C. Water Resources

203

Electrostatic coalescence system with independent AC and DC hydrophilic electrodes  

DOE Patents [OSTI]

An improved electrostatic coalescence system is provided in which independent AC and DC hydrophilic electrodes are employed to provide more complete dehydration of an oil emulsion. The AC field is produced between an AC electrode array and the water-oil interface wherein the AC electrode array is positioned parallel to the interface which acts as a grounded electrode. The emulsion is introduced into the AC field in an evenly distributed manner at the interface. The AC field promotes drop-drop and drop-interface coalescence of the water phase in the entering emulsion. The continuous oil phase passes upward through the perforated AC electrode array and enters a strong DC field produced between closely spaced DC electrodes in which small dispersed droplets of water entrained in the continuous phase are removed primarily by collection at hydrophilic DC electrodes. Large droplets of water collected by the electrodes migrate downward through the AC electrode array to the interface. All phase separation mechanisms are utilized to accomplish more complete phase separation.

Hovarongkura, A. David (Arlington, VA); Henry, Jr., Joseph D. (Morgantown, WV)

1981-01-01T23:59:59.000Z

204

High Voltage DC Transmission 1.0 Introduction  

E-Print Network [OSTI]

1 High Voltage DC Transmission 1.0 Introduction HVDC has been applied in electric power systems for many years now. Figure 1 illustrates worldwide many of the HVDC applications [1]. Fig. 1 ABB provides a webpage which summarizes HVDC projects by type and capacity or by commissioning year [2]. Wikipedia [3

McCalley, James D.

205

High Voltage DC Transmission 2 1.0 Introduction  

E-Print Network [OSTI]

1 High Voltage DC Transmission 2 1.0 Introduction Interconnecting HVDC within an AC system requires on use of switching devices collectively referred to in the HVDC community as valves. Valves may be non. Fig. 1 There have been three types of devices for implementing HVDC converter circuits: mercury

McCalley, James D.

206

Electromagnetic Coupling in a dc Motor and Tachometer Assembly  

E-Print Network [OSTI]

-pole permanent magnet stator devices. A shaft of finite stiffness connects the tachometer and motor armatures machines. The experimental test setup consists of an integrated permanent magnet dc motor-tachometer unit-tachometer shaft or a flexible mechanical coupling, this exercise in servo-control design becomes quite challenging

Awtar, Shorya

207

Building Scale DC Microgrids Chris Marnay, Steven Lanzisera, Michael Stadler, and Judy Lai  

E-Print Network [OSTI]

of building loads are either native DC, such as electronics and compact fluorescent and light emitting diode

208

A Decentralized Protection Scheme for Converters Utilizing a DC-link Inductor  

E-Print Network [OSTI]

- as in HVDC transmission for example - as well as in DC-links for high-power current source inverters

Lipo, Thomas

209

Interviews in Washington, DC for Albert Einstein Fellowship Semi-Finalists  

Broader source: Energy.gov [DOE]

Selected semi-finalists in the Albert Einstein Distinguished Educator Fellowship are invited to DC for interviews.

210

Control of a Fuel-Cell Powered DC Electric Vehicle Motor  

E-Print Network [OSTI]

Control of a Fuel-Cell Powered DC Electric Vehicle Motor Federico Zenith Sigurd Skogestad of a Fuel-Cell Powered DC Electric Vehicle Motor #12;3 Currently Available Models and Control Strategies Skogestad, Control of a Fuel-Cell Powered DC Electric Vehicle Motor #12;3 Currently Available Models

Skogestad, Sigurd

211

November 2002 15th TOFE, Washington, D.C. 1 Thermal Behavior and Operating  

E-Print Network [OSTI]

November 2002 15th TOFE, Washington, D.C. 1 Thermal Behavior and Operating Requirements of IFE Washington, D.C. November 2002 #12;November 2002 15th TOFE, Washington, D.C. 2 Abstract During injection the thermal behavior of the target under such conditions and explores possible ways of extending the target

Raffray, A. René

212

On the optimization of a dc arcjet diamond chemical vapor deposition reactor  

E-Print Network [OSTI]

On the optimization of a dc arcjet diamond chemical vapor deposition reactor S. W. Reevea) and W. A precursor in our dc arcjet reactor.1 Based on conclusions drawn from that work, an optimization strategy diamond film growth in a dc arcjet chemical vapor deposition reactor has been developed. Introducing

Dandy, David

213

Ohmic contacts to n-GaSb  

E-Print Network [OSTI]

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

214

Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures  

SciTech Connect (OSTI)

In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

2014-01-13T23:59:59.000Z

215

Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire  

SciTech Connect (OSTI)

We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2014-09-08T23:59:59.000Z

216

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect (OSTI)

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

217

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect (OSTI)

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

218

Recovery Act: Integrated DC-DC Conversion for Energy-Efficient Multicore Processors  

SciTech Connect (OSTI)

In this project, we have developed the use of thin-film magnetic materials to improve in energy efficiency of digital computing applications by enabling integrated dc-dc power conversion and management with on-chip power inductors. Integrated voltage regulators also enables fine-grained power management, by providing dynamic scaling of the supply voltage in concert with the clock frequency of synchronous logic to throttle power consumption at periods of low computational demand. The voltage converter generates lower output voltages during periods of low computational performance requirements and higher output voltages during periods of high computational performance requirements. Implementation of integrated power conversion requires high-capacity energy storage devices, which are generally not available in traditional semiconductor processes. We achieve this with integration of thin-film magnetic materials into a conventional complementary metal-oxide-semiconductor (CMOS) process for high-quality on-chip power inductors. This project includes a body of work conducted to develop integrated switch-mode voltage regulators with thin-film magnetic power inductors. Soft-magnetic materials and inductor topologies are selected and optimized, with intent to maximize efficiency and current density of the integrated regulators. A custom integrated circuit (IC) is designed and fabricated in 45-nm CMOS silicon-on-insulator (SOI) to provide the control system and power-train necessary to drive the power inductors, in addition to providing a digital load for the converter. A silicon interposer is designed and fabricated in collaboration with IBM Research to integrate custom power inductors by chip stacking with the 45-nm CMOS integrated circuit, enabling power conversion with current density greater than 10A/mm2. The concepts and designs developed from this work enable significant improvements in performance-per-watt of future microprocessors in servers, desktops, and mobile devices. These new approaches to scaled voltage regulation for computing devices also promise significant impact on electricity consumption in the United States and abroad by improving the efficiency of all computational platforms. In 2006, servers and datacenters in the United States consumed an estimated 61 billion kWh or about 1.5% of the nation's total energy consumption. Federal Government servers and data centers alone accounted for about 10 billion kWh, for a total annual energy cost of about $450 million. Based upon market growth and efficiency trends, estimates place current server and datacenter power consumption at nearly 85 billion kWh in the US and at almost 280 billion kWh worldwide. Similar estimates place national desktop, mobile and portable computing at 80 billion kWh combined. While national electricity utilization for computation amounts to only 4% of current usage, it is growing at a rate of about 10% a year with volume servers representing one of the largest growth segments due to the increasing utilization of cloud-based services. The percentage of power that is consumed by the processor in a server varies but can be as much as 30% of the total power utilization, with an additional 50% associated with heat removal. The approaches considered here should allow energy efficiency gains as high as 30% in processors for all computing platforms, from high-end servers to smart phones, resulting in a direct annual energy savings of almost 15 billion kWh nationally, and 50 billion kWh globally. The work developed here is being commercialized by the start-up venture, Ferric Semiconductor, which has already secured two Phase I SBIR grants to bring these technologies to the marketplace.

Shepard, Kenneth L

2013-03-31T23:59:59.000Z

219

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect (OSTI)

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

220

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network [OSTI]

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

InAsGaPInGaP high-temperature power Schottky rectifier and J. M. Woodall  

E-Print Network [OSTI]

°C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion is thought to be due to strong covalent bonding at the InAs/GaP interface. The InAs/GaP heterointerface effectively blocks impurity diffusion. Since InGaP is superior to GaP for high-power applica- tions, as shown

Woodall, Jerry M.

222

Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting  

E-Print Network [OSTI]

of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Wetzel, Christian M.

223

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

224

Heat load of a P-doped GaAs photocathode in SRF electron gun  

SciTech Connect (OSTI)

Many efforts were made over the last decades to develop a better polarized electron source for the high energy physics. Several laboratories operate DC guns with the Gallium-Arsenide photo-cathode, which yield a highly polarized electron beam. However, the beam's emittance might well be improved using a Superconducting RF electron gun, which delivers beams of higher brightness than DC guns does, because the field gradient at the cathode is higher. SRF guns with metal cathodes and CsTe cathodes have been tested successfully. To produce polarized electrons, a Gallium-Arsenide photo-cathode must be used: an experiment to do so in a superconducting RF gun is under way at BNL. Since the cathode will be normal conducting, the problem about the heat load stemming from the cathode arises. We present our measurements of the electrical resistance of GaAs at cryogenic temperatures, a prediction of the heat load and the verification by measuring the quality factor of the gun with and without cathode.

Wang, E.; Ben-Zvi, I.; Kewisch, J.; Burrill, A.; Rao, T.; Wu, Q.; Jain, A.; Gupta, R.; Holmes, D.

2010-05-23T23:59:59.000Z

225

Multilevel cascade voltage source inverter with seperate DC sources  

DOE Patents [OSTI]

A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

Peng, Fang Zheng (Oak Ridge, TN); Lai, Jih-Sheng (Knoxville, TN)

1997-01-01T23:59:59.000Z

226

Multilevel cascade voltage source inverter with separate DC sources  

DOE Patents [OSTI]

A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations. 15 figs.

Peng, F.Z.; Lai, J.S.

1997-06-24T23:59:59.000Z

227

Multilevel cascade voltage source inverter with seperate DC sources  

DOE Patents [OSTI]

A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

Peng, Fang Zheng (Knoxville, TN); Lai, Jih-Sheng (Blacksburg, VA)

2002-01-01T23:59:59.000Z

228

211 Westcott Building, 222 S. Copeland Avenue, P.O. Box 3061480, Tallahassee, FL 32306-1480 Telephone 850.644.6876, Fax 850.644.3375 http://fda.fsu.edu  

E-Print Network [OSTI]

211 Westcott Building, 222 S. Copeland Avenue, P.O. Box 3061480, Tallahassee, FL 32306 in the Office of the Vice President for Faculty Development and Advancement in Westcott 115 by Monday, October 7

Sura, Philip

229

408 Westcott Building, Florida State University, P.O. Box 3061410, Tallahassee, FL 32306-1410 Telephone 850.644.3501 Fax 850.644.2969 www.gradschool.fsu.edu  

E-Print Network [OSTI]

408 Westcott Building, Florida State University, P.O. Box 3061410, Tallahassee, FL 32306 Westcott. Student deadline to departments is February 1, 2011. Folders for all nominees are due

Bowers, Philip L.

230

Basic DC Meter Design ECE 2100 Circuit Analysis Laboratory  

E-Print Network [OSTI]

Basic DC Meter Design ECE 2100 Circuit Analysis Laboratory updated 8 January 2008 Pre-Laboratory Assignment 1. Design an ammeter with full scale current IFS equal to 5 mA using a meter movement rated at 0.5 mA and 100 mV. 2. Design a voltmeter with a full scale voltage VFS equal to 10 V using the meter

Miller, Damon A.

231

Report on Non-Contact DC Electric Field Sensors  

SciTech Connect (OSTI)

This document reports on methods used to measure DC electrostatic fields in the range of 100 to 4000 V/m using a non-contact method. The project for which this report is written requires this capability. Non-contact measurements of DC fields is complicated by the effect of the accumulation of random space-charges near the sensors which interfere with the measurement of the field-of-interest and consequently, many forms of field measurements are either limited to AC measurements or use oscillating devices to create pseudo-AC fields. The intent of this document is to report on methods discussed in the literature for non-contact measurement of DC fields. Electric field meters report either the electric field expressed in volts per distance or the voltage measured with respect to a ground reference. Common commercial applications for measuring static (DC) electric fields include measurement of surface charge on materials near electronic equipment to prevent arcing which can destroy sensitive electronic components, measurement of the potential for lightning to strike buildings or other exposed assets, measurement of the electric fields under power lines to investigate potential health risks from exposure to EM fields and measurement of fields emanating from the brain for brain diagnostic purposes. Companies that make electric field sensors include Trek (Medina, NY), MKS Instruments, Boltek, Campbell Systems, Mission Instruments, Monroe Electronics, AlphaLab, Inc. and others. In addition to commercial vendors, there are research activities continuing in the MEMS and optical arenas to make compact devices using the principles applied to the larger commercial sensors.

Miles, R; Bond, T; Meyer, G

2009-06-16T23:59:59.000Z

232

!#"%$'&)(02130546708913@A4B0DC Scott Schaefer, Joe Warren  

E-Print Network [OSTI]

¢¡¤£¦¥¨§©©¡ !#"%$'&)(¤02130546708913£@¡A4B0DC Scott Schaefer, Joe Warren Rice UniversityE: for each edge in the grid that contains a sign change (i.e.; the vertices on its end- points these methods primal methods. i e-mail: p sschaefe,jwarrenq @rice.edu Figure 1: A sphere contoured using

Warren, Joe

233

The Use of DC Glow Discharges as Undergraduate Educational Tools  

SciTech Connect (OSTI)

Plasmas have a beguiling way of getting students excited and interested in physics. We argue that plasmas can and should be incorporated into the undergraduate curriculum as both demonstrations and advanced investigations of electromagnetism and quantum effects. Our device, based on a direct current (DC) glow discharge tube, allows for a number of experiments into topics such as electrical breakdown, spectroscopy, magnetism, and electron temperature.

Stephanie A. Wissel and Andrew Zwicker, Jerry Ross, and Sophia Gershman

2012-10-09T23:59:59.000Z

234

Disc rotors with permanent magnets for brushless dc motor  

SciTech Connect (OSTI)

This patent describes a brushless dc permanent magnet motor for driving an autonomous underwater vehicle. It comprises first and second substantially flat, generally cylindrical stators disposed in side by side relation; a first substantially flat, generally cylindrical rotor; a first shaft connected to the first rotor and a second, concentric shaft connected to the second rotor; and means for providing rotation of the first and second shafts in opposite directions.

Hawsey, R.A.; Bailery, J.M.

1992-05-26T23:59:59.000Z

235

DC Resistivity Survey (Pole-Dipole Array) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentratingRenewable Solutions LLC JumpCrow Lake Wind JumpCuttings AnalysisDC Resistivity

236

Summary of electric vehicle dc motor-controller tests  

SciTech Connect (OSTI)

Available performance data for production motors are usually of marginal value to the electric vehicle designer. To provide at least a partial remedy to this situation, tests of typical dc propulsion motors and controllers were conducted as part of the DOE Electric Vehicle Program. The objectives of this program were to evaluate the differences in the performance of dc motors when operating with chopper-type controllers and when operating on direct current; and to gain an understanding of the interactions between the motor and the controller which cause these differences. Toward this end, motor-controller tests performed by the NASA Lewis Research Center provided some of the first published data that quantified motor efficiency variations for both ripple-free (straight dc) and chopper modes of operation. Test and analysis work at the University of Pittsburgh explored motor-controller relationships in greater depth. And to provide additional data, 3E Vehicles tested two small motors, both on a dynamometer and in a vehicle, and the Eaton Corporation tested larger motors, using sophisticated instrumentation and digital processing techniques. All the motors tested were direct-current types. Of the separately excited types, seven were series wound and two were shunt wound. One self-excited permanent magnet type was also tested. Four of the series wound motors used brush shifting to obtain good commutation. In almost all cases, controller limitations constrained the test envelope so that the full capability of the motors could not be explored.

McBrien, E F; Tryon, H B

1982-09-01T23:59:59.000Z

237

Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires  

SciTech Connect (OSTI)

The near-surface reduction of the Sb mole fraction during the growth of GaAsSb nanowires (NWs) and GaAs NWs with GaAsSb inserts has been studied using quantitative high-angle annular dark field scanning transmission electron microscopy (STEM). A model for diffusion of Sb in the hexagonal NWs was developed and employed in combination with the quantitative STEM analysis. GaAsSb NWs grown by Ga-assisted molecular beam epitaxy (MBE) and GaAs/GaAsSb NWs grown by Ga- and Au-assisted MBE were investigated. At the high temperatures employed in the NW growth, As-Sb exchange at and outward diffusion of Sb towards the surface take place, resulting in reduction of the Sb concentration at and near the surface in the GaAsSb NWs and the GaAsSb inserts. In GaAsSb NWs, an increasing near-surface depletion of Sb was observed towards the bottom of the NW due to longer exposure to the As beam flux. In GaAsSb inserts, an increasing change in the Sb concentration profile was observed with increasing post-insert axial GaAs growth time, resulting from a combined effect of radial GaAs overgrowth and diffusion of Sb. The effect of growth temperature on the diffusion of Sb in the GaAsSb inserts was identified. The consequences of these findings for growth optimization and the optoelectronic properties of GaAsSb are discussed.

Kauko, H.; Helvoort, A. T. J. van, E-mail: a.helvoort@ntnu.no [Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim (Norway); Fimland, B. O.; Munshi, A. M. [Department of Electronics and Telecommunications, NTNU, Trondheim (Norway); Grieb, T.; Müller, K.; Rosenauer, A. [Institut für Festkörperphysik, Universität Bremen, Bremen (Germany)

2014-10-14T23:59:59.000Z

238

Optimal Demand Response in DC Distribution Networks Hamed Mohsenian-Rad, Member, IEEE and Ali Davoudi, Member, IEEE  

E-Print Network [OSTI]

such as photovoltaic systems are essentially DC sources. Battery storage devices are also easier H. Mohsenian

Mohsenian-Rad, Hamed

239

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template  

SciTech Connect (OSTI)

We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

Wang, Y.D.; Zang, K.Y.; Chua, S.J.; Tripathy, S.; Chen, P.; Fonstad, C.G. [Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2005-12-19T23:59:59.000Z

240

REGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based  

E-Print Network [OSTI]

the metal oxide varistor (MOV) and resistor (R) in a state-of-the-art surge protection circuit), metal oxide varistor (MOV), and transient voltage suppressor (TVS) diodes are the state-of-the- artREGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal­Semiconductor­Metal

Chow, Lee

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Multiphase soft switched DC/DC converter and active control technique for fuel cell ripple current elimination  

DOE Patents [OSTI]

DC/DC converter has a transformer having primary coils connected to an input side and secondary coils connected to an output side. Each primary coil connects a full-bridge circuit comprising two switches on two legs, the primary coil being connected between the switches on each leg, each full-bridge circuit being connected in parallel wherein each leg is disposed parallel to one another, and the secondary coils connected to a rectifying circuit. An outer loop control circuit that reduces ripple in a voltage reference has a first resistor connected in series with a second resistor connected in series with a first capacitor which are connected in parallel with a second capacitor. An inner loop control circuit that reduces ripple in a current reference has a third resistor connected in series with a fourth resistor connected in series with a third capacitor which are connected in parallel with a fourth capacitor.

Lai, Jih-Sheng (Blacksburg, VA); Liu, Changrong (Sunnyvale, CA); Ridenour, Amy (Salem, VA)

2009-04-14T23:59:59.000Z

242

Communication accepte: Healthy Buildings/IAQ'97 Washington DC, septembre 1997Communication accepte: Healthy Buildings/IAQ'97 Washington DC, septembre 1997 DISCRIMINATION OF VOLATILE ORGANIC COMPOUNDS  

E-Print Network [OSTI]

Communication acceptée: Healthy Buildings/IAQ'97 Washington DC, septembre 1997Communication acceptée: Healthy Buildings/IAQ'97 Washington DC, septembre 1997 DISCRIMINATION OF VOLATILE ORGANIC manuscript, published in "4th International Conference on Healthy Buildings'97, Washington : United States

Paris-Sud XI, Université de

243

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

244

Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets  

SciTech Connect (OSTI)

We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(×2.1±1) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

2014-09-21T23:59:59.000Z

245

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect (OSTI)

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

246

Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)  

SciTech Connect (OSTI)

GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

2013-12-02T23:59:59.000Z

247

Monolithically Peltier-cooled vertical-cavity surface-emitting lasers Paul FL Berger, Niloy K. Dutta, Kent D. Choquette, Ghulam Hasnain, and Naresh Chand  

E-Print Network [OSTI]

GaAs laser. Also, in a monolithically integrated thermo- electric cooled InGaAsP/InP laser diode, Dutta et ~1 temperature of f 7.5 "C has been achieved using f 100 mA of thermoelectric cooler current. The observed" thermoelectric cooler, or a mono- lithically integrated thermoelectric cooler. Hava et ~1.~ ob- served a 2 "C

248

Quantum confinement in GaP nanoclusters  

SciTech Connect (OSTI)

We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.

Laurich, B.K.; Smith, D.C.; Healy, M.D.

1994-06-01T23:59:59.000Z

249

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

250

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

251

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect (OSTI)

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

252

FL J. Smith, Jr.  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$ EGcG ENERGY MEASUREMENTS;/:4,4 (; .369s

253

PMC·I'Fl.  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

not limited to: programmed lowering of thermostat settings, placement of timers on hot water heaters, installation of solar hot water systems. installation of efficient...

254

The dc modeling program (DCMP): Version 2. 0  

SciTech Connect (OSTI)

In this project one of the main objectives was the refinement of tools for the study of HVDC systems. The original software was prepared in project RP1964-2 (EL-4365) as power flow and stability program models for HVDC systems. In this project new modeling capabilities were added to both the power flow and stability models. Additionally, the HVDC specific model capabilities were integrated into a new program, termed the Standalone program, for use in the development and testing of HVDC models. This manual provides technical background for programmers and those interested in understanding, augmenting or transporting the dc models.

Chapman, D.G. (Manitoba HVDC Research Centre, Winnipeg, MB (Canada))

1990-08-01T23:59:59.000Z

255

Positron lifetime spectrometer using a DC positron beam  

DOE Patents [OSTI]

An entrance grid is positioned in the incident beam path of a DC beam positron lifetime spectrometer. The electrical potential difference between the sample and the entrance grid provides simultaneous acceleration of both the primary positrons and the secondary electrons. The result is a reduction in the time spread induced by the energy distribution of the secondary electrons. In addition, the sample, sample holder, entrance grid, and entrance face of the multichannel plate electron detector assembly are made parallel to each other, and are arranged at a tilt angle to the axis of the positron beam to effectively separate the path of the secondary electrons from the path of the incident positrons.

Xu, Jun; Moxom, Jeremy

2003-10-21T23:59:59.000Z

256

EA-351 DC Energy Dakota, LLC | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:Year in Review: TopEnergy DOEDealingVehicle1 Closing American Electric0-A S.A.C.94-A-B1 DC

257

Hardwired Control Changes For NSTX DC Power Feeds  

SciTech Connect (OSTI)

The National Spherical Torus Experiment (NSTX) has been designed and installed in the existing facilities at Princeton Plasma Physics Laboratory (PPPL). Most of the hardware, plant facilities, auxiliary sub-systems, and power systems originally used for the Tokamak Fusion Test Reactor (TFTR) have been used with suitable modifications to reflect NSTX needs. The original TFTR Hardwired Control System (HCS) with electromechanical relays was used for NSTX DC Power loop control and protection during NSTX operations. As part of the NSTX Upgrade, the HCS is being changed to a PLC-based system with the same control logic. This paper gives a description of the changeover to the new PLC-based system __________________________________________________

Ramakrishnan, S.

2013-06-28T23:59:59.000Z

258

Energy Incentive Programs, Washington DC | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:Year in Review: TopEnergyIDIQBusinessin Jamaica,Idaho EnergyMontanaOregonTexasWashington DC

259

DC Resistivity Survey (Dipole-Dipole Array) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentratingRenewable Solutions LLC JumpCrow Lake Wind JumpCuttings AnalysisDC Resistivity Survey

260

DC Resistivity Survey (Schlumberger Array) At Coso Geothermal Area (1977) |  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentratingRenewable Solutions LLC JumpCrow Lake Wind JumpCuttings AnalysisDC ResistivityOpen

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

DC Resistivity Survey (Wenner Array) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentratingRenewable Solutions LLC JumpCrow Lake Wind JumpCuttings AnalysisDC ResistivityOpen Jump

262

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots  

SciTech Connect (OSTI)

The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)] [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)] [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Física, Universidade Federal do Ceará, P.O. Box 6030, Fortaleza–CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain)] [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goñi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)] [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)

2014-01-06T23:59:59.000Z

263

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect (OSTI)

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

264

Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes  

SciTech Connect (OSTI)

We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States); Yarrison-Rice, Jan [Department of Physics, Miami University, Oxford, OH 45056 (United States); Gao, Qiang; Tan, Hoe; Jagadish, Chennupati [Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Etheridge, Joanne [Monash Centre for Electron Microscopy, Monash University, Victoria, 3800 (Australia); Wong, Bryan M. [Materials Chemistry Department, Sandia National Laboratories, Livermore, CA 94551 (United States)

2013-12-04T23:59:59.000Z

265

On strongly GA-convex functions and stochastic processes  

SciTech Connect (OSTI)

In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

Bekar, Nurgül Okur [Department of Statistics, Giresun University, Giresun (Turkey); Akdemir, Hande Günay; ??can, ?mdat [Department of Mathematics, Giresun University, Giresun (Turkey)

2014-08-20T23:59:59.000Z

266

Energy absorption in Ni-Mn-Ga/ polymer composites  

E-Print Network [OSTI]

In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

Feuchtwanger, Jorge

2006-01-01T23:59:59.000Z

267

E-Print Network 3.0 - ac-dc power transmission Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Ris Summary: (AEDVESESY) DFIG control Power control loop Speed control loop Wind turbine control Measurement grid point AC DC... reference DFIG control Power control...

268

Optimizing Energy Savings from Direct-DC in U.S. Residential Buildings  

E-Print Network [OSTI]

Appliance type Standard technology DC-internal best technology Lighting Incandescent, fluorescent, LED Incandescent Electronic Heating Heater Electric resistance Cooling Motor (& compressor,

Garbesi, Karina

2012-01-01T23:59:59.000Z

269

Design and Modeling of Centralized Distribution Network for the DC House Project.  

E-Print Network [OSTI]

?? This thesis focuses on the design, modeling, simulation, and performance evaluation of Centralized Distribution Network for the DC House Project. Power System Computer Aided… (more)

Bassi, Harpreet S.

2013-01-01T23:59:59.000Z

270

Sustainable Energy Utility- D.C. Home Performance (District of Columbia)  

Broader source: Energy.gov [DOE]

The District of Columbia Sustainable Energy Utility currently offers the D.C. Home Performance program (DCHP). DCHP provides a $500 incentive to properties which successfully complete qualifying...

271

Accurate characterization and improvement of GaAs microstrip attenuation  

E-Print Network [OSTI]

Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

Carroll, James Mason

2012-06-07T23:59:59.000Z

272

Design and analysis of a zero-voltage switching scheme for a dc- to-dc converter  

E-Print Network [OSTI]

&rt~RV, Page 40 Voltage across inain switch in a clc cliopper clrive with zeio-voltage s w 1 't C 1 1 i l1 g , &g CHAPTER I INTRODUCTION A. Introduction In general terms, power electronics is concerned wit, h the conversion and control of electrical... power (dc or ac) at variable voltage and variable frequency. With the development of power semi- conductor devices such as silicon-controlled rectifiers (SCR's), gate-turn-off thyris- tors (GTO's), bipolar junction transistors (BJT's), metal...

Arun, G.

1992-01-01T23:59:59.000Z

273

Data:Eec988f9-dc0d-45ef-9789-a7781dc1934b | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Pagec-01b596aa1744b55997c1ccEeae2669-ec94-4cc4-bbae-0108084310cc No revision has been approved for this81dc1934b No revision

274

Height stabilization of GaSb/GaAs quantum dots by Al-rich capping  

SciTech Connect (OSTI)

GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

Smakman, E. P., E-mail: e.p.smakman@tue.nl; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands); DeJarld, M.; Martin, A. J.; Millunchick, J. [Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Luengo-Kovac, M.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2014-09-01T23:59:59.000Z

275

Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates  

SciTech Connect (OSTI)

The vertical bulk (drain-bulk) current (I{sub db}) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I{sub db} (25-300 Degree-Sign C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E{sub a}), the (soft or destructive) vertical breakdown voltage (V{sub B}), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E{sub a} = 0.35 eV at T = 25-300 Degree-Sign C; V{sub B} = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E{sub a} = 2.5 eV at T > 265 Degree-Sign C; V{sub B} > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E{sub a} = 0.35 eV at T > 150 Degree-Sign C; V{sub B} = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

Perez-Tomas, A.; Fontsere, A.; Llobet, J. [IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, CAT (Spain); Placidi, M. [IREC, Jardins Dones de Negre 1, 08930 Sant Adria de Besos, Barcelona (Spain); Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Baron, N. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); PICOGIGA International, Pl M. Rebuffat, Courtaboeuf 7, 91140 Villejust (France)

2013-05-07T23:59:59.000Z

276

Waste form development for a DC arc furnace  

SciTech Connect (OSTI)

A laboratory crucible study was conducted to develop waste forms to treat nonradioactive simulated {sup 238}Pu heterogeneous debris waste from Savannah River, metal waste from the Idaho National Engineering Laboratory (INEL), and nominal waste also from INEL using DC arc melting. The preliminary results showed that the different waste form compositions had vastly different responses for each processing effect. The reducing condition of DC arc melting had no significant effects on the durability of some waste forms while it decreased the waste form durability from 300 to 700% for other waste forms, which resulted in the failure of some TCLP tests. The right formulations of waste can benefit from devitrification and showed an increase in durability by 40%. Some formulations showed no devitrification effects while others decreased durability by 200%. Increased waste loading also affected waste form behavior, decreasing durability for one waste, increasing durability by 240% for another, and showing no effect for the third waste. All of these responses to the processing and composition variations were dictated by the fundamental glass chemistry and can be adjusted to achieve maximal waste loading, acceptable durability, and desired processing characteristics if each waste formulation is designed for the result according to the glass chemistry.

Feng, X.; Bloomer, P.E.; Chantaraprachoom, N.; Gong, M.; Lamar, D.A.

1996-09-01T23:59:59.000Z

277

Multiband GaNAsP Quaternary Alloys  

SciTech Connect (OSTI)

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

2005-12-08T23:59:59.000Z

278

Page 1 (AB BAEEDEC?-Lo/i? (?) Al?Dc?QE/???oc, 1. The explicit ...  

E-Print Network [OSTI]

@Moo ib. Wwf-rw AfchOH-?-«Sv c@ vwl C1117 Vf" .gi-?? «IJ/LL* :5 Uilm@ 5:15 C;;0\\3 litio@ :b golggf+|w>fl?= www) ? ¿wm/q a m24 @vom 6,5. Armi?? :b C :_.

279

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+  

E-Print Network [OSTI]

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

McKittrick, Joanna

280

AlGaAs/GaAs photovoltaic converters for high power narrowband radiation  

SciTech Connect (OSTI)

AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

2014-09-26T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

282

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect (OSTI)

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

283

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect (OSTI)

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

284

Point defect balance in epitaxial GaSb  

SciTech Connect (OSTI)

Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

Segercrantz, N., E-mail: natalie.segercrantz@aalto.fi; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland); Song, Y.; Wang, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Göteborg (Sweden); State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 (China)

2014-08-25T23:59:59.000Z

285

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents [OSTI]

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

286

Control of Parallel-Connected Bidirectional AC-DC Converters in Stationary Frame for Microgrid  

E-Print Network [OSTI]

Control of Parallel-Connected Bidirectional AC-DC Converters in Stationary Frame for Microgrid-- With the penetration of renewable energy in modern power system, microgrid has become a popular application worldwide. In this paper, parallel-connected bidirectional converters for AC and DC hybrid microgrid application

Teodorescu, Remus

287

High Dynamic Performance Programmed PWM Control of a Multilevel Inverter with Capacitor DC Sources  

E-Print Network [OSTI]

High Dynamic Performance Programmed PWM Control of a Multilevel Inverter with Capacitor DC Sources inverter consisting of a stan- dard 3-leg inverter supplied by a DC source and three full H-bridges each reactive voltage to the motor while the standard three leg inverter can supply both reactive and active

Tolbert, Leon M.

288

CTMCONTROL: Addressing the MC/DC Objective for Safety-Critical Automotive Software  

E-Print Network [OSTI]

CTMCONTROL: Addressing the MC/DC Objective for Safety-Critical Automotive Software Anila Mjeda.mjeda,mike.hinchey}@lero.ie Abstract. We propose a method tailored to the requirements of safety-critical embedded automotive software/DC) objective for automotive safety-critical software. CTMCONTROL is validated via a controlled experiment which

Paris-Sud XI, Université de

289

Supervisory Control of an Adaptive-Droop Regulated DC Microgrid with Battery Management  

E-Print Network [OSTI]

such as photovoltaic (PV) systems and secondary batteries. In this paper, several distributed generators (DGs) have1 Supervisory Control of an Adaptive-Droop Regulated DC Microgrid with Battery Management been merged together with a pair of batteries and loads to form an autonomous dc Microgrid (MG

Vasquez, Juan Carlos

290

PID Control with Derivative Filtering Integral Anti-Windup for a DC Servo  

E-Print Network [OSTI]

PID Control with Derivative Filtering and Integral Anti-Windup for a DC Servo Nicanor Quijano in the prelab for PID controllers. For that, we use the DC motor for the SRV-02ET to do position control. You . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2.4 PID Controller with Derivative Filtering

291

DC H2O: What's on Tap? Annual Progress Report for FY 2004  

E-Print Network [OSTI]

for distributing treated water to DC residents has taken the brunt of the blame and has developed mechanisms. Project resources have secured a GPS unit and additional resources have already been allocated for GIS as a part of the 4-H Youth Cyber Camp. And as such, will incorporate the technological aspects of the DC H2O

District of Columbia, University of the

292

Smith, D.C., et al., 2000 ODP Technical Note 28  

E-Print Network [OSTI]

Smith, D.C., et al., 2000 ODP Technical Note 28 METHODS FOR QUANTIFYING POTENTIAL MICROBIAL CONTAMINATION DURING DEEP OCEAN CORING 1,2 David C. Smith,3 Arthur J. Spivack,4 Martin R. Fisk,5 Shelley A that these contamination tests be routinely conducted when coring for microbiological studies. 1Smith, D.C., Spivack, A

293

A nonlinear robust HVDC control for a parallel AC/DC power system  

E-Print Network [OSTI]

A nonlinear robust HVDC control for a parallel AC/DC power system Hongzhi Cai a , Zhihua Qu b. Keywords: Robust control; HVDC; Power system; Stability; Lyapunov method 1. Introduction It has been recognized that, through an HVDC transmission line, fast electronic control can be applied on the DC power

Qu, Zhihua

294

EE443L: Intermediate Control Lab Lab2: Modeling a DC motor  

E-Print Network [OSTI]

will develop and validate a basic model of a permanent magnet DC motor (Yaskawa Electric, Mini-series, Minertia of a permanent magnet DC motor, the field current is constant (i.e. a constant magnetic field). It can be shown(t) = input voltage eb(t) = back emf if(t) = field current (t) = shaft angle (t) = torque J = moment

Wedeward, Kevin

295

Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction  

SciTech Connect (OSTI)

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16° from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

2014-03-17T23:59:59.000Z

296

Adaptive Selective Harmonic Minimization Based on ANNs for Cascade Multilevel Inverters With Varying DC Sources  

SciTech Connect (OSTI)

A new approach for modulation of an 11-level cascade multilevel inverter using selective harmonic elimination is presented in this paper. The dc sources feeding the multilevel inverter are considered to be varying in time, and the switching angles are adapted to the dc source variation. This method uses genetic algorithms to obtain switching angles offline for different dc source values. Then, artificial neural networks are used to determine the switching angles that correspond to the real-time values of the dc sources for each phase. This implies that each one of the dc sources of this topology can have different values at any time, but the output fundamental voltage will stay constant and the harmonic content will still meet the specifications. The modulating switching angles are updated at each cycle of the output fundamental voltage. This paper gives details on the method in addition to simulation and experimental results.

Filho, Faete [ORNL; Maia, Helder Z [UFMS, Department of Electrical Engineering; Mateus, Tiago Henrique D [ORNL; Ozpineci, Burak [ORNL; Tolbert, Leon M [ORNL; Pinto, Joao Onofre P [ORNL

2013-01-01T23:59:59.000Z

297

Possible temperature control DC switch effect between two superconductors  

E-Print Network [OSTI]

The lifetime of an electron pair could not be unlimited long, on the basis of this, we suggest a model. The model means that the movements of charge carriers in a superconductor should have three forms: the single-electron movement, the single-pair movement, and the revolving around the mass center of two electrons in a pair. Thus the current in a superconductor has three possible parts. Similarly, there should be three possible effects in a SIS junction: the tunneling of single electron, the tunneling of single pair, and the pair-forming following the pair-breaking. This paper will discuss these problems and present a possible temperature control DC switch effect between two superconductors.

Tian De Cao

2011-08-11T23:59:59.000Z

298

Discharging a DC bus capacitor of an electrical converter system  

DOE Patents [OSTI]

A system and method of discharging a bus capacitor of a bidirectional matrix converter of a vehicle are presented here. The method begins by electrically shorting the AC interface of the converter after an AC energy source is disconnected from the AC interface. The method continues by arranging a plurality of switching elements of a second energy conversion module into a discharge configuration to establish an electrical current path from a first terminal of an isolation module, through an inductive element, and to a second terminal of the isolation module. The method also modulates a plurality of switching elements of a first energy conversion module, while maintaining the discharge configuration of the second energy conversion module, to at least partially discharge a DC bus capacitor.

Kajouke, Lateef A; Perisic, Milun; Ransom, Ray M

2014-10-14T23:59:59.000Z

299

Disc rotors with permanent magnets for brushless DC motor  

SciTech Connect (OSTI)

A brushless dc permanent magnet motor drives an autonomous underwater vehe. In one embodiment, the motor comprises four substantially flat stators in stacked relationship, with pairs of the stators axially spaced, each of the stators comprising a tape-wound stator coil, and first and second substantially flat rotors disposed between the spaced pairs of stators. Each of the rotors includes an annular array of permanent magnets embedded therein. A first shaft is connected to the first rotor and a second, concentric shaft is connected to the second rotor, and a drive unit causes rotation of the two shafts in opposite directions. The second shaft comprises a hollow tube having a central bore in which the first shaft is disposed. Two different sets of bearings support the first and second shafts. In another embodiment, the motor comprises two ironless stators and pairs of rotors mounted on opposite sides of the stators and driven by counterrotating shafts.

Hawsey, Robert A. (Oak Ridge, TN); Bailey, J. Milton (Knoxville, TN)

1992-01-01T23:59:59.000Z

300

FLUXCAP: A flux-coupled ac/dc magnetizing device  

E-Print Network [OSTI]

We report on an instrument for applying ac and dc magnetic fields by capturing the flux from a rotating permanent magnet and projecting it between two adjustable pole pieces. This can be an alternative to standard electromagnets for experiments with small samples or in probe stations in which an applied magnetic field is needed locally, with advantages that include a compact form-factor, very low power requirements and dissipation as well as fast field sweep rates. This flux capture instrument (FLUXCAP) can produce fields from -400 to +400 mT, with field resolution less than 1 mT. It generates static magnetic fields as well as ramped fields, with ramping rates as high as 10 T/s. We demonstrate the use of this apparatus for studying the magnetotransport properties of spin-valve nanopillars, a nanoscale device that exhibits giant magnetoresistance.

Gopman, Daniel B; Kent, Andrew D

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Generating expansion model incorporating compact DC power flow equations  

SciTech Connect (OSTI)

This paper presents a compact method of incorporating the spatial dimension into the generation expansion problem. Compact DC power flow equations are used to provide real-power flow coordination equations. Using these equations the marginal contribution of a generator to th total system loss is formulated as a function of that generator`s output. Incorporating these flow equations directly into the MIP formulation of the generator expansion problem results in a model that captures a generator`s true net marginal cost, one that includes both the cost of generation and the cost of transport. This method contrasts with other methods that iterate between a generator expansion model and an optimal power flow model. The proposed model is very compact and has very good convergence performance. A case study with data from Kenya is used to provide a practical application to the model.

Nderitu, D.G.; Sparrow, F.T.; Yu, Z. [Purdue Inst. for Interdisciplinary Engineering Studies, West Lafayette, IN (United States)

1998-12-31T23:59:59.000Z

302

Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure  

SciTech Connect (OSTI)

Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures. We demonstrated that manipulation of the emission energy may be achieved by appropriate choice of the shell structure. The emission at highest energy is generated in the NWs with tunneling thin AlGaAs inner shell and thin GaAs outer shell due to recombination of the photoexcited electrons confined in the outer shell with the holes in the core. Lower energy emission was shown to occur in the NWs with thick outer shell grown in the form of a short-period GaAs/AlGaAs multiple quantum well structure. In this case, the tunneling probability through the multiple quantum wells controls the energy emitted by the NWs. The doping of core results in dominated low energy emission from the GaAs core.

Barbosa, B. G.; Arakaki, H.; Souza, C. A. de; Pusep, Yu. A. [Instituto de Fisica de São Carlos, Universidade de São Paulo, 13560-970 Sao Carlos, SP (Brazil)

2014-03-21T23:59:59.000Z

303

High energy electron fluxes in dc-augmented capacitively coupled plasmas I. Fundamental characteristics  

SciTech Connect (OSTI)

Power deposition from electrons in capacitively coupled plasmas (CCPs) has components from stochastic heating, Joule heating, and from the acceleration of secondary electrons through sheaths produced by ion, electron, or photon bombardment of electrodes. The sheath accelerated electrons can produce high energy beams which, in addition to producing excitation and ionization in the gas can penetrate through the plasma and be incident on the opposite electrode. In the use of CCPs for microelectronics fabrication, there may be an advantage to having these high energy electrons interact with the wafer. To control the energy and increase the flux of the high energy electrons, a dc bias can be externally imposed on the electrode opposite the wafer, thereby producing a dc-augmented CCP (dc-CCP). In this paper, the characteristics of dc-CCPs will be discussed using results from a computational study. We found that for a given rf bias power, beams of high energy electrons having a narrow angular spread (<1 deg. ) can be produced incident on the wafer. The maximum energy in the high energy electron flux scales as {epsilon}{sub max}=-V{sub dc}+V{sub rf}+V{sub rf0}, for a voltage on the dc electrode of V{sub dc}, rf voltage of V{sub rf}, and dc bias on the rf electrode of V{sub rf0}. The dc current from the biased electrode must return to ground through surfaces other than the rf electrode and so seeks out a ground plane, typically the side walls. If the side wall is coated with a poorly conducting polymer, the surface will charge to drive the dc current through.

Wang Mingmei [Department of Chemical and Biological Engineering, Iowa State University, Ames, Iowa 50010 (United States); Kushner, Mark J. [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

2010-01-15T23:59:59.000Z

304

Reduction of DC-link Capacitor in Case of Cascade Multilevel Converters by means of Reactive Power  

E-Print Network [OSTI]

to integrate wind generator to multi- terminal dc collection network are few such examples. The basic block

Teodorescu, Remus

305

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell  

SciTech Connect (OSTI)

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-01-01T23:59:59.000Z

306

Inductorless DC-AC Cascaded H-bridge Multilevel Boost Inverter for Electric/Hybrid Electric Vehicle  

E-Print Network [OSTI]

Inductorless DC-AC Cascaded H-bridge Multilevel Boost Inverter for Electric/Hybrid Electric Vehicle boost inverter for EV and HEV applications. Currently available power inverter systems for HEVs use a DC- DC boost converter to boost the battery voltage for a traditional 3-phase inverter. The present HEV

Tolbert, Leon M.

307

Minimization of DC Reactor and Operation Characteristics of Direct-Power-Controlled Current-Source PWM Rectifier  

E-Print Network [OSTI]

Minimization of DC Reactor and Operation Characteristics of Direct-Power-Controlled Current control; hence inductance of the DC reactor can be reduced. Feasibility of the strategy is verified characteristics of the direct power control based current-source PWM rectifier with a miniaturized DC reactor

Fujimoto, Hiroshi

308

Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells  

SciTech Connect (OSTI)

In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Carrington, P. J.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2014-01-07T23:59:59.000Z

309

Efficiency enhancement of InGaN/GaN solar cells with nanostructures  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

2014-02-03T23:59:59.000Z

310

Graphene in ohmic contact for both n-GaN and p-GaN  

SciTech Connect (OSTI)

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26T23:59:59.000Z

311

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network [OSTI]

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

312

Piezoelectric surface acoustical phonon amplification in graphene on a GaAs substrate  

SciTech Connect (OSTI)

We study the interaction of Dirac Fermions in monolayer graphene on a GaAs substrate in an applied electric field by the combined action of the extrinsic potential of piezoelectric surface acoustical phonons of GaAs (piezoelectric acoustical (PA)) and of the intrinsic deformation potential of acoustical phonons in graphene (deformation acoustical (DA)). We find that provided the dc field exceeds a threshold value, emission of piezoelectric (PA) and deformation (DA) acoustical phonons can be obtained in a wide frequency range up to terahertz at low and high temperatures. We found that the phonon amplification rate R{sup PA,DA} scales with T{sub BG}{sup S?1} (S=PA,DA), T{sub BG}{sup S} being the Block?Gru{sup ¨}neisen temperature. In the high-T Block?Gru{sup ¨}neisen regime, extrinsic PA phonon scattering is suppressed by intrinsic DA phonon scattering, where the ratio R{sup PA}/R{sup DA} scales with ?1/?(n), n being the carrier concentration. We found that only for carrier concentration n?10{sup 10}cm{sup ?2}, R{sup PA}/R{sup DA}>1. In the low-T Block?Gru{sup ¨}neisen regime, and for n=10{sup 10}cm{sup ?2}, the ratio R{sup PA}/R{sup DA} scales with T{sub BG}{sup DA}/T{sub BG}{sup PA}?7.5 and R{sup PA}/R{sup DA}>1. In this regime, PA phonon dominates the electron scattering and R{sup PA}/R{sup DA}<1 otherwise. This study is relevant to the exploration of the acoustic properties of graphene and to the application of graphene as an acoustical phonon amplifier and a frequency-tunable acoustical phonon device.

Nunes, O. A. C., E-mail: oacn@unb.br [Institute of Physics, University of Brasilia, Brasilia, 70910-900 DF (Brazil)

2014-06-21T23:59:59.000Z

313

Impact of quasi-dc currents on three-phase distribution transformer installations  

SciTech Connect (OSTI)

This report summarizes a series of tests designed to determine the response of quasi-dc currents on three-phase power distribution transformers for electric power systems. In general, if the dc injection is limited to the primary side of a step-down transformer, significant harmonic distortion is noted and an increase in the reactive power demand results. For dc injection on the secondary (load) side of the step-down transformer the harmonic content at the secondary side is quite high and saturation occurs with a relatively low level of dc injection; however, the reactive power demand is significantly lower. These tests produced no apparent damage to the transformers. Transformer damage is dependent on the duration of the dc excitation, the level of the excitation, and on thermal characteristics of the transfer. The transformer response time is found to be much shorter than seen in power transformer tests at lower dc injection levels. This shorter response time suggests that the response time is strongly dependent on the injected current levels, and that higher levels of dc injection for shorter durations could produce very high reactive power demands and harmonic distortion within a few tenths of a second. The added reactive power load could result in the blowing of fuses on the primary side of the transformer for even moderate dc injection levels, and neutral currents are quite large under even low-level dc injection. This smoking neutral'' results in high-level harmonic injection into equipment via the neutral and in possible equipment failure.

McConnell, B.W.; Barnes, P.R. (Oak Ridge National Lab., TN (United States)); Tesche, F.M. (Tesche (F.M.), Dallas, TX (United States)); Schafer, D.A. (Mission Research Corp., Albuquerque, NM (United States))

1992-06-01T23:59:59.000Z

314

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect (OSTI)

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Néel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

315

Wavelength limits for InGaN quantum wells on GaN  

SciTech Connect (OSTI)

The emission wavelength of coherently strained InGaN quantum wells (QW) is limited by the maximum thickness before relaxation starts. For high indium contents x>40% the resulting wavelength decreases because quantum confinement dominates. For low indium content x<40% the electron hole wave function overlap (and hence radiative emission) is strongly reduced with increasing QW thickness due to the quantum confined Stark effect and imposes another limit. This results in a maximum usable emission wavelength at around 600?nm for QWs with 40%-50% indium content. Relaxed InGaN buffer layers could help to push this further, especially on non- and semi-polar orientations.

Pristovsek, Markus, E-mail: markus@pristovsek.de [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)] [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)

2013-06-17T23:59:59.000Z

316

Application of the ASME code in the design of the GA-4 and GA-9 casks  

SciTech Connect (OSTI)

General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

Mings, W.J. (USDOE Idaho Field Office, Idaho Falls, ID (United States)); Koploy, M.A. (General Atomics, San Diego, CA (United States))

1992-01-01T23:59:59.000Z

317

Application of the ASME code in the design of the GA-4 and GA-9 casks  

SciTech Connect (OSTI)

General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

Mings, W.J. [USDOE Idaho Field Office, Idaho Falls, ID (United States); Koploy, M.A. [General Atomics, San Diego, CA (United States)

1992-08-01T23:59:59.000Z

318

Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces  

SciTech Connect (OSTI)

We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

2013-08-12T23:59:59.000Z

319

Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots  

SciTech Connect (OSTI)

In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074, Würzburg (Germany); Igusa, R.; Iwamoto, S.; Arakawa, Y. [University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2014-09-15T23:59:59.000Z

320

AlGaAs/GaAs quantum well infrared detectors and modulators  

E-Print Network [OSTI]

to the quantum well. This optical transition wavelength lies in the mid infrared region of the spectrum. To get a more realistic picture of the optical transition in a 1-D quantum well, the non-parabolicity of the conduction band of GaAs is taken... into consideration. Further it is seen that with the change in temperature and doping concentration the width and peak of the absorption curve also changes. Based on the above calculations and results an AIGaAs/GaAs quantum well infrared photodetector...

Dave, Digant Praful

1990-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Measurement of the Inclusive e{\\pm}p Scattering Cross Section at High Inelasticity y and of the Structure Function FL  

E-Print Network [OSTI]

A measurement is presented of the inclusive neutral current e\\pm p scattering cross section using data collected by the H1 experiment at HERA during the years 2003 to 2007 with proton beam energies Ep of 920, 575, and 460 GeV. The kinematic range of the measurement covers low absolute four-momentum transfers squared, 1.5 GeV2 < Q2 < 120 GeV2, small values of Bjorken x, 2.9 \\cdot 10-5 < x < 0.01, and extends to high inelasticity up to y = 0.85. The structure function FL is measured by combining the new results with previously published H1 data at Ep = 920 GeV and Ep = 820 GeV. The new measurements are used to test several phenomenological and QCD models applicable in this low Q2 and low x kinematic domain.

Aaron, F D; Andreev, V; Backovic, S; Baghdasaryan, A; Baghdasaryan, S; Barrelet, E; Bartel, W; Behrend, O; Belov, P; Begzsuren, K; Belousov, A; Bizot, J C; Boudry, V; Bozovic-Jelisavcic, I; Bracinik, J; Brandt, G; Brinkmann, M; Brisson, V; Britzger, D; Bruncko, D; Bunyatyan, A; Buschhorn, G; Bylinkin, A; Bystritskaya, L; Campbell, A J; Cantun Avila, K B; Ceccopieri, F; Cerny, K; Cerny, V; Chekelian, V; Cholewa, A; Contreras, J G; Coughlan, J A; Cvach, J; Dainton, J B; Daum, K; Delcourt, B; Delvax, J; De Wolf, E A; Diaconu, C; Dobre, M; Dodonov, V; Dossanov, A; Dubak, A; Eckerlin, G; Egli, S; Eliseev, A; Elsen, E; Favart, L; Fedotov, A; Felst, R; Feltesse, J; Ferencei, J; Fischer, D J; Fleischer, M; Fomenko, A; Gabathuler, E; Gayler, J; Ghazaryan, S; Glazov, A; Goerlich, L; Gogitidze, N; Gouzevitch, M; Grab, C; Grebenyuk, A; Greenshaw, T; Grell, B R; Grindhammer, G; Habib, S; Haidt, D; Helebrant, C; Henderson, R C.W; Hennekemper, E; Henschel, H; Herbst, M; Herrera, G; Hildebrandt, M; Hiller, K H; Hoffmann, D; Horisberger, R; Hreus, T; Huber, F; Jacquet, M; Janssen, X; Jonsson, L; Jung, A W; Jung, H; Kapichine, M; Katzy, J; Kenyon, I R; Kiesling, C; Klein, M; Kleinwort, C; Kluge, T; Knutsson, A; Kogler, R; Kostka, P; Kraemer, M; Kretzschmar, J; Kruger, K; Kutak, K; Landon, M P.J; Lange, W; Lastovicka-Medin, G; Laycock, P; Lebedev, A; Lendermann, V; Levonian, S; Lipka, K; List, B; List, J; Loktionova, N; Lopez-Fernandez, R; Lubimov, V; Makankine, A; Malinovski, E; Marage, P; Martyn, H U; Maxfield, S J; Mehta, A; Meyer, A B; Meyer, H; Meyer, J; Mikocki, S; Milcewicz-Mika, I; Moreau, F; Morozov, A; Morris, J V; Mozer, M U; Mudrinic, M; Muller, K; Naumann, Th; Newman, P R; Niebuhr, C; Nikiforov, A; Nikitin, D; Nowak, G; Nowak, K; Olsson, J E; Osman, S; Ozerov, D; Pahl, P; Palichik, V; Panagoulias, I; Pandurovic, M; Papadopoulou, Th; Pascaud, C; Patel, G D; Perez, E; Petrukhin, A; Picuric, I; Piec, S; Pirumov, H; Pitzl, D; Placakyte, R; Pokorny, B; Polifka, R; Povh, B; Radescu, V; Raicevic, N; Ravdandorj, T; Reimer, P; Rizvi, E; Robmann, P; Roosen, R; Rostovtsev, A; Rotaru, M; Ruiz Tabasco, J E; Rusakov, S; Salek, D; Sankey, D P.C; Sauter, M; Sauvan, E; Schmitt, S; Schoeffel, L; Schoning, A; Schultz-Coulon, H C; Sefkow, F; Shtarkov, L N; Shushkevich, S; Sloan, T; Smiljanic, I; Soloviev, Y; Sopicki, P; South, D; Spaskov, V; Specka, A; Staykova, Z; Steder, M; Stella, B; Stoicea, G; Straumann, U; Sykora, T; Thompson, P D; Toll, T; Tran, T H; Traynor, D; Truol, P; Tsakov, I; Tseepeldorj, B; Tsurin, I; Turnau, J; Urban, K; Valkarova, A; Vallee, C; Van Mechelen, P; Vargas, A; Vazdik, Y; von den Driesch, M; Wegener, D; Wunsch, E; Zacek, J; Zalesak, J; Zhang, Z; Zhokin, A; Zohrabyan, H; Zomer, F

2011-01-01T23:59:59.000Z

322

Observation and cancellation of the dc Stark shift in strontium optical lattice clocks  

E-Print Network [OSTI]

We report on the observation of a dc Stark frequency shift at the $10^{-13}$ level by comparing two strontium optical lattice clocks. This frequency shift arises from the presence of electric charges trapped on dielectric surfaces placed under vacuum close to the atomic sample. We show that these charges can be eliminated by shining UV light on the dielectric surfaces, and characterize the residual dc Stark frequency shift on the clock transition at the $10^{-18}$ level by applying an external electric field. This study shows that the dc Stark shift can play an important role in the accuracy budget of lattice clocks, and should be duly taken into account.

Lodewyck, Jérôme; Lorini, Luca; Gurov, Mikhail; Lemonde, Pierre

2011-01-01T23:59:59.000Z

323

The smoothing transformer, a new concept in dc side harmonic reduction of HVdc schemes  

SciTech Connect (OSTI)

Direct connection schemes have been a subject of recent investigation, offering operational flexibility and substantial reductions in ac components. In these schemes the use of active dc filters has been suggested to replace the conventional tuned passive filter design. This paper presents the smoothing transformer as a new means for reducing dc harmonics at characteristic and non-characteristic frequencies using only passive components. A realistic smoothing transformer design is examined using the New Zealand HVdc system operating in the direct connection mode. The steady-state and transient performance of the smoothing transformer design is compared with that of the existing dc smoothing reactor and filter bank.

Enright, W.; Arrillaga, J.; Wood, A.R.; Hidalgo, F.P.

1996-10-01T23:59:59.000Z

324

Macroeconomic Study of Construction Firm's Profitability Using Cluster Analysis  

E-Print Network [OSTI]

# 2 Cluster # 3 Alabama (AL) Alaska (AK) Arizona (AZ) Arkansas (AR) California (CA) Colorado (CO) Delaware (DE) Connecticut (CT) District of Columbia (DC) Idaho (ID) Hawaii (HI) Florida (FL) Iowa (IA) Illinois (IL) Georgia (GA) Kansas (KS... by Average labor productivity, it can be observed that clusters can be easily discerned as shown in figure 2. 20 Table 2: Clustering Results for Model 2 Cluster # 1 Cluster # 2 Cluster # 3 Alabama (AL) Arkansas (AR) Alaska (AK) Arizona (AZ...

Arora, Parth

2012-10-19T23:59:59.000Z

325

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

326

Panel: Microgrid Research and Field Testing IEEE PES General Meeting, 24-28 June 2007, Tampa, FL 1 In general, a microgrid can operate in both the grid-connected  

E-Print Network [OSTI]

Panel: Microgrid Research and Field Testing IEEE PES General Meeting, 24-28 June 2007, Tampa, FL 1 Abstract In general, a microgrid can operate in both the grid-connected mode and the islanded mode where the microgrid is interfaced to the main power system by a fast semiconductor switch called static switch, (SS

327

211 Westcott Building, 222 S. Copeland Avenue, P.O. Box 3061480, Tallahassee, FL 32306-1480 Telephone 850.644.6876, Fax 850.644.3375 http://fda.fsu.edu  

E-Print Network [OSTI]

211 Westcott Building, 222 S. Copeland Avenue, P.O. Box 3061480, Tallahassee, FL 32306 Development and Advancement in Westcott 115 by Friday, March 21, 2014, for submission to the President and Advancement in Westcott 115 for each specialized faculty. Article 14 (and Appendix J of the FSU-BOT UFF

Sura, Philip

328

JOURNAL DE PHYSIQUE Colloque C6, supplkment au no 12, Tome 37, DPcembre 1976,page C6-897 M~SSBAUERSTUDIES OF' lZ9IATOMS IMPLANTED IN a-AND fl-TIN  

E-Print Network [OSTI]

~SSBAUERSTUDIES OF' lZ9IATOMS IMPLANTED IN a- AND fl-TIN H. DE WAARD and G. J. KEMERINK Laboratorium voor Algemene on the basis of a simple model. Implants of 1291 in /3 tin yield two line spectra identicalto those found for implants in a tin converted to /3 tin by heating. Repeated phase transitions show that the impurity

Paris-Sud XI, Université de

329

Greitzer, F.L. April 2000. "Life Extension Analysis and Prognostics Architectures," Laboratory Directed Research and Development Annual Report, Fiscal Year 1999, pp. 85-88. PNNL-13203. U.S. Department of Energy. Richland, Washington.  

E-Print Network [OSTI]

of Energy. Richland, Washington. Life-Extension Analysis and Prognostics Architectures Frank L. GreitzerGreitzer, F.L. April 2000. "Life Extension Analysis and Prognostics Architectures," Laboratory that perform sensor fusion, analysis, reporting and interpreting of results with little or no human

330

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect (OSTI)

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

331

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network [OSTI]

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

332

O?[]O? nuclear ?-decay of ?²Ga  

E-Print Network [OSTI]

information, MARS was focused such that only fully stripped N=Z ions were passed, with the vast majority of them being Ga. The second phase of the experiment was a I3-y coincidence experiment. At the back-end of MARS, a 1" x 1 '!4" x 3" four..., using the Weinberg-Salam model of electroweak interactions, to be [23]: A& ? d, ?= ? [41n(mz/m )+ln(m /m?)+2K+A +" ]. (16) Here mz is the mass of the Z boson, me the proton mass, mx is the low energy cutoff for the second and third terms that arise...

Hyman, Bruce Carl

1999-01-01T23:59:59.000Z

333

General Atomics (GA) | Princeton Plasma Physics Lab  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert Southwest Region service area. TheEPSCIResearch to sponsorGeneral Atomics (GA)

334

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGA SNC Solar Jump to:

335

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells  

SciTech Connect (OSTI)

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

2014-01-21T23:59:59.000Z

336

Vehicle Technologies Office Merit Review 2014: High Performance DC Bus Film Capacitor  

Broader source: Energy.gov [DOE]

Presentation given by GE Global Research at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about high performance DC bus...

337

Strontium Titanate DC Electric Field Switchable and Tunable Bulk Acoustic Wave Solidly Mounted Resonator  

E-Print Network [OSTI]

Strontium Titanate DC Electric Field Switchable and Tunable Bulk Acoustic Wave Solidly Mounted Abstract - A voltage switchable/tunable strontium titanate solidly mounted BAW resonator was implemented films, piezoelectric resonators. I. INTRODUCTION Strontium titanate (STO) and barium strontium titanate

York, Robert A.

338

Optimizing Energy Savings from Direct-DC in U.S. Residential Buildings  

E-Print Network [OSTI]

a-vis the impact of partial loads on power system componentto test the effect of partial load conditions and possibleto direct-DC savings. Partial load effects reduce estimates

Garbesi, Karina

2012-01-01T23:59:59.000Z

339

Over-Current Protection Scheme for SiC Power MOSFET DC Circuit Breaker  

E-Print Network [OSTI]

V. Radun, “SiC based solid state power controller,” in 23tha solid-state circuit breaker based on SiC power MOSFET withSolid-state DC circuit breakers made of the modern wide bandgap power

Zhang, Yuan; Liang, Yung C.

2015-01-01T23:59:59.000Z

340

Application to Export Electric Energy OE Docket No. EA-351 DC...  

Broader source: Energy.gov (indexed) [DOE]

DC Energy Dakota, LLC Application to export electric energy OE Docket No. EA-210-B PPL EnergyPlus, LLC Application to Export Electric Energy OE Docket No. EA-354 Endure...

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Hydrogen Storage Systems Analysis Working Group Meeting Argonne National Laboratory DC Offices  

E-Print Network [OSTI]

Hydrogen Storage Systems Analysis Working Group Meeting Argonne National Laboratory DC Offices 955 by Romesh Kumar Argonne National Laboratory and Laura Verduzco Sentech, Inc. February 28, 2007 #12;SUMMARY

342

Measured Savings of DC to AC Drive Retrofit in Plastic Extrusion  

E-Print Network [OSTI]

This paper presents the potential electrical energy efficiency improvements for utilizing alternating current (AC) motors controlled by variable frequency drives (VFD) in place of direct current (DC) motors to drive plastic extrusion machines. A...

Sfeir, R. A.

2008-01-01T23:59:59.000Z

343

Dean's Report from DC (Nov 2011) 1: Federal Science Funding PerspecAve  

E-Print Network [OSTI]

Dean's Report from DC (Nov 2011) 1: Federal Science Funding Perspec (AdministraAon's) FY12 PrioriAes Ã? Moving toward a clean energy future to reduce dependence on energy imports while curbing greenhouse gas emissions Ã? Understanding

Wang, Yuqing

344

Washington, D.C. : essays on the city form of a capital  

E-Print Network [OSTI]

This thesis is an exploration of the city form of Washington. D.C. through four independent essays. Each essay examines a different aspect of the city: its monumentality as determined by its relationship with the nation ...

Kousoulas, George

1985-01-01T23:59:59.000Z

345

Area Efficient D/A Converters For Accurate DC Operation Brandon Royce Greenley  

E-Print Network [OSTI]

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 6.2 Mismatch Modeling For Area Optimization . . . . . . . . . . . . . . . . . . . . . . . 51 6Area Efficient D/A Converters For Accurate DC Operation by Brandon Royce Greenley A THESIS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 5.1 Measurement Setup

Moon, Un-Ku

346

DC-OPF Formulation with Price-Sensitive Demand Bids Junjie Sun and Leigh Tesfatsion  

E-Print Network [OSTI]

DC-OPF Formulation with Price-Sensitive Demand Bids Junjie Sun and Leigh Tesfatsion Last Revised (TNCS) subject to various transmission constraints. As explained at length in Sun and Tesfation (2007

Tesfatsion, Leigh

347

Multilevel-Dc-Bus Inverter For Providing Sinusoidal And Pwm Electrical Machine Voltages  

DOE Patents [OSTI]

A circuit for controlling an ac machine comprises a full bridge network of commutation switches which are connected to supply current for a corresponding voltage phase to the stator windings, a plurality of diodes, each in parallel connection to a respective one of the commutation switches, a plurality of dc source connections providing a multi-level dc bus for the full bridge network of commutation switches to produce sinusoidal voltages or PWM signals, and a controller connected for control of said dc source connections and said full bridge network of commutation switches to output substantially sinusoidal voltages to the stator windings. With the invention, the number of semiconductor switches is reduced to m+3 for a multi-level dc bus having m levels. A method of machine control is also disclosed.

Su, Gui-Jia [Knoxville, TN

2005-11-29T23:59:59.000Z

348

Optimizing Energy Savings from Direct-DC in U.S. Residential Buildings  

E-Print Network [OSTI]

wind/fuel cell hybrid energy systems. Energy and Buildings,National Energy Modeling System PHEV plug-in hybrid electrica hybrid DC and AC power system that included energy storage

Garbesi, Karina

2012-01-01T23:59:59.000Z

349

High luminosity, slow ejecta and persistent carbon lines: SN 2009dc challenges thermonuclear explosion scenarios .  

E-Print Network [OSTI]

??Extended optical and near-IR observations reveal that SN 2009dc shares a number of similarities with normal Type Ia supernovae (SNe Ia), but is clearly overluminous,… (more)

Taubenberger, S.

2011-01-01T23:59:59.000Z

350

ReHABit : claiming endangered structures in Washington DC to rethink subsidized housing  

E-Print Network [OSTI]

There is an affordable housing crisis today in Washington D.C. that is the result of a uniquely complicated history of a capital city and a current economic boom. This thesis responds to that crisis by proposing a new ...

Fowlkes, Catherine Kuhnle

2007-01-01T23:59:59.000Z

351

Electrical and Optical Gain Lever Effects in InGaAs Double Quantum Well Diode Lasers  

SciTech Connect (OSTI)

In multisection laser diodes, the amplitude or frequency modulation (AM or FM) efficiency can be improved using the gain lever effect. To study gain lever, InGaAs double quantum well (DQW) edge emitting lasers have been fabricated with integrated passive waveguides and dual sections providing a range of split ratios from 1:1 to 9:1. Both the electrical and the optical gain lever have been examined. An electrical gain lever with greater than 7 dB enhancement of AM efficiency was achieved within the range of appropriate DC biasing currents, but this gain dropped rapidly outside this range. We observed a 4 dB gain in the optical AM efficiency under non-ideal biasing conditions. This value agreed with the measured gain for the electrical AM efficiency under similar conditions. We also examined the gain lever effect under large signal modulation for digital logic switching applications. To get a useful gain lever for optical gain quenched logic, a long control section is needed to preserve the gain lever strength and a long interaction length between the input optical signal and the lasing field of the diode must be provided. The gain lever parameter space has been fully characterized and validated against numerical simulations of a semi-3D hybrid beam propagation method (BPM) model for the coupled electron-photon rate equation. We find that the optical gain lever can be treated using the electrical injection model, once the absorption in the sample is known.

Pocha, M D; Goddard, L L; Bond, T C; Nikolic, R J; Vernon, S P; Kallman, J S; Behymer, E M

2007-01-03T23:59:59.000Z

352

Nonlinear modal interaction in HVDC/AC power systems with dc power modulation  

SciTech Connect (OSTI)

In this paper investigation of nonlinear modal interaction using the normal form of vector fields technique is extended to HVDC/AC power systems with dc power modulation. The ac-dc interface equations are solved to form a state space model with second order approximation. Using the normal form technique, the system`s nonlinear dynamic characteristics are obtained. The proposed approach is applied to a 4-generator HVDC/AC test power system, and compare with the time domain solution.

Ni, Y.X. [Tsinghua Univ., Beijing (China)] [Tsinghua Univ., Beijing (China); Vittal, V.; Kliemann, W.; Fouad, A.A. [Iowa State Univ., Ames, IA (United States)] [Iowa State Univ., Ames, IA (United States)

1996-11-01T23:59:59.000Z

353

Development of a Bulk GaN Growth Technique for Low Defect Density...  

Broader source: Energy.gov (indexed) [DOE]

current due to bulk defects GaN is Grown Heteroepitaxially on Sapphire (and Silicon Carbide) Substrates * As grown GaN nucleation layers contain disordered GaN with many...

354

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect (OSTI)

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

355

CoNiGa High Temperature Shape Memory Alloys  

E-Print Network [OSTI]

commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

Dogan, Ebubekir

2011-10-21T23:59:59.000Z

356

Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n-lnGaAs/lnP/p-InGaAs heterostructures  

E-Print Network [OSTI]

Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n (Received 23 November 1992; accepted for publication 4 March 1993) The realization of collector-up light for the collector stripe definition. Electrons, injected over the wide-gap heterostructure barrier (InAlAs or In

Luryi, Serge

357

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect (OSTI)

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

358

Elastic properties of Pu metal and Pu-Ga alloys  

SciTech Connect (OSTI)

We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

2010-01-05T23:59:59.000Z

359

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect (OSTI)

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

360

Optimizing Energy Savings from Direct-DC in U.S. Residential Buildings  

SciTech Connect (OSTI)

An increasing number of energy efficient appliances operate on direct current (DC) internally, offering the potential to use DC from renewable energy systems directly and avoiding the losses inherent in converting power to alternating current (AC) and back. This paper investigates that potential for net-metered residences with on-site photovoltaics (PV) by modeling the net power draw of the ‘direct-DC house’ with respect to today’s typical configuration, assuming identical DC-internal loads. Power draws were modeled for houses in 14 U.S. cities, using hourly, simulated PV-system output and residential loads. The latter were adjusted to reflect a 33% load reduction, representative of the most efficient DC-internal technology, based on an analysis of 32 electricity end-uses. The model tested the effect of climate, electric vehicle (EV) loads, electricity storage, and load shifting on electricity savings; a sensitivity analysis was conducted to determine how future changes in the efficiencies of power system components might affect savings potential. Based on this work, we estimate that net-metered PV residences could save 5% of their total electricity load for houses without storage and 14% for houses with storage. Based on residential PV penetration projections for year 2035 obtained from the National Energy Modeling System (2.7% for the reference case and 11.2% for the extended policy case), direct-DC could save the nation 10 trillion Btu (without storage) or 40 trillion Btu (with storage). Shifting the cooling load by two hours earlier in the day (pre-cooling) has negligible benefits for energy savings. Direct-DC provides no energy savings benefits for EV charging, to the extent that charging occurs at night. However, if charging occurred during the day, for example with employees charging while at work, the benefits would be large. Direct-DC energy savings are sensitive to power system and appliance conversion efficiencies but are not significantly influenced by climate. While direct-DC for residential applications will most likely arise as a spin-off of developments in the commercial sector—because of lower barriers to market entry and larger energy benefits resulting from the higher coincidence between load and insolation—this paper demonstrates that there are substantial benefits in the residential sector as well. Among residential applications, space cooling derives the largest energy savings from being delivered by a direct-DC system. It is the largest load for the average residence on a national basis and is particularly so in high-load regions. It is also the load with highest solar coincidence.

Garbesi, Karina; Vossos, Vagelis; Sanstad, Alan; Burch, Gabriel

2011-10-13T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach  

E-Print Network [OSTI]

Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

Itoh, Tatsuo

362

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network [OSTI]

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

363

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network [OSTI]

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

364

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network [OSTI]

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

365

Fabrication of quantum point contacts by engraving GaAsAlGaAs heterostructures with a diamond tip  

E-Print Network [OSTI]

by hot-filament chemical vapor deposition of polycrystalline diamond onto a prepat- terned siliconFabrication of quantum point contacts by engraving GaAsÕAlGaAs heterostructures with a diamond tip for publication 17 July 2002 We use the all-diamond tip of an atomic force microscope for the direct engraving

Hohls, Frank

366

OPTIMIZATION OF GaN WINDOW LAYER FOR InGaN SOLAR CELLS USING POLARIZATION EFFECT  

E-Print Network [OSTI]

on the design of wide-band gap GaN window layers for InGaN solar cells. Window layers serve to passivate the top into account during design of the solar cell to improve its collection efficiency. Previously, we have. The present work is a subset of the design optimization process for such solar cells, where we focus

Honsberg, Christiana

367

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network [OSTI]

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm Ga...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

368

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics  

E-Print Network [OSTI]

injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

Klotzkin, David

369

Diffusion of a Ga adatom on the GaAs(001)c(44)heterodimer surface: A first principles study  

E-Print Network [OSTI]

Diffusion of a Ga adatom on the GaAs(001)c(4×4)heterodimer surface: A first principles study J Diffusion barriers Reconstruction Density functional calculations The adsorption and diffusion behavior functional theory (DFT) computations in the local density approxima- tion. Structural and bonding features

Khare, Sanjay V.

370

Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields  

E-Print Network [OSTI]

Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures with increasing external electric field, with the radiative component exhibiting weaker field dependence. © 2009 applied electric field in Ref. 12, the electric field dependent radiative recombination in particular has

Demir, Hilmi Volkan

371

Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures M. Geddo,1,a)  

E-Print Network [OSTI]

Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures M. Geddo,1,a) M. Patrini,1 G; accepted 5 May 2011; published online 20 June 2011) The effect of hydrogen irradiation on the optical for fiber optic communications. These promising results in view of the development of waveguides deserve

372

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network [OSTI]

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

373

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes  

E-Print Network [OSTI]

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

Wetzel, Christian M.

374

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers  

E-Print Network [OSTI]

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers C. Wetzel, Nagoya, Japan Received 11 December 1995; accepted for publication 21 February 1996 Infrared reflection, their alloys and potential substrates need to be investigated as well. Here we present a study of the infrared

Wetzel, Christian M.

375

Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings  

SciTech Connect (OSTI)

The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Carrington, P. J. [Department of Electronic and Electrical Engineering, University College London, London (United Kingdom); Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2014-07-28T23:59:59.000Z

376

Single photon emission from site-controlled InGaN/GaN quantum dots  

SciTech Connect (OSTI)

Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90?K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%–25% exhibited single photon emission at 10?K.

Zhang, Lei; Hill, Tyler A.; Deng, Hui, E-mail: dengh@umich.edu [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States)] [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States); Teng, Chu-Hsiang; Lee, Leung-Kway; Ku, Pei-Cheng, E-mail: peicheng@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)] [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

2013-11-04T23:59:59.000Z

377

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect (OSTI)

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

378

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes  

SciTech Connect (OSTI)

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07T23:59:59.000Z

379

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect (OSTI)

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

380

Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well  

SciTech Connect (OSTI)

The relaxation of lattice-mismatched strain by deep postetching was systematically investigated for InGaN/GaN multiple quantum wells (MQWs). A planar heterojunction wafer, which included an In{sub 0.21}Ga{sub 0.79}N (3.2 nm)/GaN (14.8 nm) MQW, was etched by inductively coupled plasma dry etching, to fabricate high-density nanopillar, nanostripe, and nanohole arrays. The etching depth was 570 nm for all nanostructures. The diameter of the nanopillars was varied from 50 to 300 nm, then the mesa stripe width of the nanostripes and the diameter of the nanoholes were varied from 100 nm to 440 nm and 50 nm to 310 nm, respectively. The effect of strain relaxation on various optical properties was investigated. For example, in an array of nanopillars with diameter 130 nm and interval 250 nm, a large blueshift in the photoluminescence (PL) emission peak from 510 nm (as-grown) to 459 nm occurred at room temperature (RT). PL internal quantum efficiency (defined by the ratio of PL integral intensity at 300 K to that at 4.2 K) was enhanced from 34% (as-grown) to 60%, and the PL decay time at 4.2 K was reduced from 22 ns (as-grown) to 4.2 ns. These results clearly indicate the reduction of lattice-mismatched strain by postetching, which enhanced strain reduction with decreasing nanopillar diameter down to a diameter of 130 nm, where the strain reduction became saturated. The dependence of RT-PL decay time on nanopillar diameter was measured, and the surface nonradiative recombination velocity was estimated to be 5.8x10{sup 2} cm/s. This relatively slow rate indicates a little etching damage.

Ramesh, V.; Kikuchi, A.; Kishino, K. [Department of Electrical and Electronics Engineering, Sophia University, Tokyo 102-8554, Japan and Nano-technology Research Center, Sophia University, Tokyo 102-8554 (Japan); CREST, JST, Saitama 332-0012 (Japan); Funato, M.; Kawakami, Y. [CREST, JST, Saitama 332-0012 (Japan); Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)

2010-06-15T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Trapped-ion cell with improved DC potential harmonicity for FT-ICR MS  

SciTech Connect (OSTI)

The trapped-ion cell is a key component critical for optimal performance in Fourier transform ion cyclotron resonance (FT-ICR) mass spectrometry (MS). We have upgraded our 12 Tesla FT-ICR instrument with a new open cylindrical cell that includes four additional cylindrical segments that serve as compensation electrodes. The DC potential on the additional segments can be set to specific pre-calculated values to suppress DC trapping field anharmonicity, in an effort to improve coherence of the ion cyclotron motion and minimize deviations from the calibration function of the ideal cell. Alternatively, the compensation potentials can be set equal to potentials of adjacent cell electrodes, which creates a DC potential distribution equivalent to that of a regular open cylindrical cell. The initial experimental characterization of both the compensated and open cell configurations was performed using ESI direct infusion of a peptide mixture. Operating the compensated cell at increased post-excitation radii resulted in improved mass measurement accuracy together with increased signal intensity, while the regular configuration exhibited peak splitting and reduced signal life time under these operating conditions. The observed improvement of the compensated cell performance was consistent with the expected behavior due to the improved DC potential harmonicity. These results confirm that the trapping DC potential harmonicity is significant for optimizing FT-ICR MS performance.

Tolmachev, Aleksey V.; Robinson, Errol W.; Wu, Si; Kang, Hyuk; Lourette, Natacha M.; Pasa-Tolic, Ljiljana; Smith, Richard D.

2008-04-01T23:59:59.000Z

382

Field dependent emission rates in radiation damaged GaAs  

SciTech Connect (OSTI)

We have measured the temperature and field dependence of emission rates from five traps in electron damaged GaAs. Four of the traps have previously been identified as radiation defects. One of the traps, seen in higher doped diodes, has not been previously identified. We have fit the data to a multiphonon emission theory that allows recombination in GaAs to be characterized over a broad range of temperature and electric field. These results demonstrate an efficient method to calculate field-dependent emission rates in GaAs.

Fleming, R. M.; Myers, S. M.; Wampler, W. R.; Lang, D. V.; Seager, C. H.; Campbell, J. M. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)

2014-07-07T23:59:59.000Z

383

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545*. . : '* FEB1f\l p :.;LIST OFK I

384

Effect of Sb on the Properties of GaInP Top Cells (Presentation)  

SciTech Connect (OSTI)

The summary of this report is that: (1) Sb can be used to increase V{sub oc} of a GaInP top cell; (2) the photovoltaic quality of GaInP is relatively unaffected by the presence of Sb; and (3) Sb-doped GaInP/GaAs tandem cells show promise for achieving efficiencies over 32%.

Olson, J. M.; McMahon, W. E.; Kurtz, S.

2006-05-01T23:59:59.000Z

385

Development of 500 kV DC PPLP-insulated oil-filled submarine cable  

SciTech Connect (OSTI)

This paper outlines the development of a 500 kV DC oil-filled submarine cable capable of transmitting 2,800 MW with {+-} 500 kV 2800A bipole system. Polypropylene Laminated Paper (PPL) was employed as the insulation material, which is the worlds first application to DC cables. The conductor size is 3,000 mm{sup 2}, which is the largest size for submarine cables ever put into practical use. Through various fundamental and prototype tests, the cable proved to have excellent electrical characteristics for DC voltage as well as transient overvoltage. The cable and accessories are currently undergoing a long-term accelerated aging test as the final confirmation of their reliability and stability.

Fujimori, A. [Kansai Electric Power Co., Inc., Osaka (Japan)] [Kansai Electric Power Co., Inc., Osaka (Japan); Tanaka, T. [Electric Power Development Co., Ltd., Tokyo (Japan)] [Electric Power Development Co., Ltd., Tokyo (Japan); Takashima, H. [Shikoku Electric Power Co., Inc., Kagawa (Japan)] [Shikoku Electric Power Co., Inc., Kagawa (Japan); Imajo, T. [Central Research Inst. of Electric Power Industry, Tokyo (Japan)] [Central Research Inst. of Electric Power Industry, Tokyo (Japan); Hata, R. [Sumitomo Electric Industries, Ltd., Osaka (Japan)] [Sumitomo Electric Industries, Ltd., Osaka (Japan); Tanabe, T. [Furukawa Electric Co., Ltd., Tokyo (Japan)] [Furukawa Electric Co., Ltd., Tokyo (Japan); Yoshida, S. [Fujikura, Ltd., Tokyo (Japan)] [Fujikura, Ltd., Tokyo (Japan); Kakihana, T. [Hitachi Cable, Ltd., Tokyo (Japan)] [Hitachi Cable, Ltd., Tokyo (Japan)

1996-01-01T23:59:59.000Z

386

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices  

SciTech Connect (OSTI)

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy); Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio [University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

2014-02-21T23:59:59.000Z

387

Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs  

SciTech Connect (OSTI)

The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm{sup 2} at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.

Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Afonenko, A. A. [Belarussian State University (Belarus)] [Belarussian State University (Belarus); Dikareva, N. V. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation); Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Kudryavtsev, K. E.; Morozov, S. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Nekorkin, S. M. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)

2013-11-15T23:59:59.000Z

388

Electrical spin injection using GaCrN in a GaN based spin light emitting diode  

SciTech Connect (OSTI)

We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

Banerjee, D.; Ganguly, S.; Saha, D., E-mail: dipankarsaha@iitb.ac.in [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); IITB-Monash Research Academy, Indian Institute of Technology Bombay, Mumbai 400076 (India); Adari, R.; Sankaranarayan, S.; Kumar, A. [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India)] [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S. [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)] [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

2013-12-09T23:59:59.000Z

389

Solid Silicone Elastomer Material(DC745U)-Historical Overview and New Experimental Results  

SciTech Connect (OSTI)

DC745U is a silicone elastomer used in several weapon systems. DC745U is manufactured by Dow Corning and its formulation is proprietary. Risk changes without notification to the customer. {sup 1}H and {sup 29}Si{l_brace}{sup 1}H{r_brace} NMR have previously determined that DC745U contains {approx} 98.5% dimethyl siloxane, {approx}1.5% methyl-phenyl siloxane, and a small amount (<1%) of vinyl siloxane repeat units that are converted to crosslinking sites. The polymer is filled with {approx} 38 wt.% of a mixture of fumed silica and quartz. Some conclusions are: (1) DMA shows that crystallization does have an effect on the mechanical properties of DC745U; (2) DMA shows that the crystallization is time and temperature dependent; (3) Mechanical tests show that DC745U undergo a crystalline transition at temperatures below -50 C; (4) Rate and temperature does not have an effect above crystalline transition; (5) Crystalline transition occurs faster at colder temperatures; (6) The material remains responsive and recovers after warming it to temperature above -40 C; (7) We were able to review all previous historical data on DC745U; (8) Identified specific gaps in materials understanding; (9) Developed design of experiments and testing methods to address gaps associated with post-curing and low temperature mechanical behavior; (10) Resolved questions of post-cure and alleviated concerns associated with low temperature mechanical behavior with soak time and temperature; and (11) This work is relevant to mission-critical programs and for supporting programmatic work for weapon research.

Ortiz-Acosta, Denisse [Los Alamos National Laboratory

2012-08-08T23:59:59.000Z

390

Beta-decay branching ratios of 62Ga  

E-Print Network [OSTI]

Beta-decay branching ratios of 62Ga have been measured at the IGISOL facility of the Accelerator Laboratory of the University of Jyvaskyla. 62Ga is one of the heavier Tz = 0, 0+ -> 0+ beta-emitting nuclides used to determine the vector coupling constant of the weak interaction and the Vud quark-mixing matrix element. For part of the experimental studies presented here, the JYFLTRAP facility has been employed to prepare isotopically pure beams of 62Ga. The branching ratio obtained, BR= 99.893(24)%, for the super-allowed branch is in agreement with previous measurements and allows to determine the ft value and the universal Ft value for the super-allowed beta decay of 62Ga.

A. Bey; B. Blank; G. Canchel; C. Dossat; J. Giovinazzo; I. Matea; V. Elomaa; T. Eronen; U. Hager; M. Hakala; A. Jokinen; A. Kankainen; I. Moore; H. Penttila; S. Rinta-Antila; A. Saastamoinen; T. Sonoda; J. Aysto; N. Adimi; G. De France; J. C. Thomas; G. Voltolini; T. Chaventré

2008-04-17T23:59:59.000Z

391

Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot  

SciTech Connect (OSTI)

In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

Emre Kavruk, Ahmet, E-mail: aekavruk@selcuk.edu.tr, E-mail: aekavruk@gmail.com; Koc, Fatih [Physics Department, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Sahin, Mehmet, E-mail: mehmet.sahin@agu.edu.tr, E-mail: mehsahin@gmail.com [Physics Department, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Department of Material Sciences and Nanotechnology Engineering, Abdullah Gul University, Kayseri (Turkey)

2013-11-14T23:59:59.000Z

392

Transverse acoustic actuation of Ni-Mn-Ga single crystals  

E-Print Network [OSTI]

Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

Simon, Jesse Matthew

2007-01-01T23:59:59.000Z

393

Lattice vibrations of pure and doped GaSe  

SciTech Connect (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

394

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents [OSTI]

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

395

Anti-phase domains in cubic GaN  

SciTech Connect (OSTI)

The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {l_brace}111{r_brace} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, {mu}-Raman and cathodoluminescence spectroscopy.

Maria Kemper, Ricarda; Schupp, Thorsten; Haeberlen, Maik; Lindner, Joerg; Josef As, Donat [University of Paderborn, Department of Physics, Warburger Str. 100, D-33098 Paderborn (Germany); Niendorf, Thomas; Maier, Hans-Juergen [University of Paderborn, Lehrstuhl fuer Werkstoffkunde, Pohlweg 47-49, D-33098 Paderborn (Germany); Dempewolf, Anja; Bertram, Frank; Christen, Juergen [University of Magdeburg, Institut fuer Festkoerperphysik, P.O. Box 4120, D-39016 Magdeburg (Germany); Kirste, Ronny; Hoffmann, Axel [Technische Universitaet Berlin, Institute of Solid State Physics, Hardenbergstr. 36, D-10623 Berlin (Germany)

2011-12-15T23:59:59.000Z

396

Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching  

E-Print Network [OSTI]

The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...

Chen, A.

397

p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas  

SciTech Connect (OSTI)

Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

2013-12-23T23:59:59.000Z

398

Epitaxial growth of Cu,,In,Ga...Se2 on GaAs,,110... and A. Rockett  

E-Print Network [OSTI]

. INTRODUCTION The Cu(In, Ga)Se2 CIGS absorber layer in a recent record-efficiency CIGS solar cell1 has a 220.13 Commercially supplied ``epi-ready'' liquid- encapsulated Czo

Rockett, Angus

399

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods  

E-Print Network [OSTI]

Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in nanorod structure of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that the improvement is a combined effect of the amendment contributed by lateral carrier confinement and the deterioration made by surface trapping.

Shi, Chentian; Yang, Fan; Park, Min Joo; Kwak, Joon Seop; Jung, Sukkoo; Choi, Yoon-Ho; Wang, Xiaoyong; Xiao, Min

2013-01-01T23:59:59.000Z

400

Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces  

SciTech Connect (OSTI)

We report on green (550–560?nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (?500?A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (?550?nm at room temperature). At high current densities (>1?kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4?kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14?kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

Ledentsov, N. N., E-mail: nikolay.ledentsov@v-i-systems.com; Shchukin, V. A. [VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany); Lyytikäinen, J.; Okhotnikov, O. [Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland); Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V. [A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation); Schlichting, S.; Nippert, F.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)

2014-11-03T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Control of current and voltage oscillations in a short dc discharge making use of external auxiliary electrode  

E-Print Network [OSTI]

Control of current and voltage oscillations in a short dc discharge making use of external://rsi.aip.org/about/rights_and_permissions #12;REVIEW OF SCIENTIFIC INSTRUMENTS 83, 103502 (2012) Control of current and voltage oscillations October 2012) A dc discharge with a hot cathode is subject to current and voltage plasma oscillations

Kaganovich, Igor

402

The DC field components of horizontal and vertical electric dipole sources immersed in three-layered stratified media  

E-Print Network [OSTI]

for the solution in the case of horizontal electric dipole (HED) radiation source and the single-component HertzThe DC field components of horizontal and vertical electric dipole sources immersed in three- ponents of the static (DC) fields of horizontal electric dipoles ( HEDs) and vertical electric dipoles

Boyer, Edmond

403

Superconductivity for Electric Systems Annual Peer Review Washington, DC July 27-29, 2004. OAK RIDGE NATIONAL LABORATORY  

E-Print Network [OSTI]

Superconductivity for Electric Systems Annual Peer Review Washington, DC ­ July 27-29, 2004. OAK RIDGE NATIONAL LABORATORY U. S. DEPARTMENT OF ENERGY American Superconductor Corporation U. Schoop, M. W&D support #12;Superconductivity for Electric Systems Annual Peer Review Washington, DC ­ July 27-29, 2004

404

New Power Electronics Converter Interfacing a Hybrid Dc/Ac Microgrid M. Alibeik, E. C. dos Santos Jr.  

E-Print Network [OSTI]

New Power Electronics Converter Interfacing a Hybrid Dc/Ac Microgrid M. Alibeik, E. C. dos Santos microgrid is that it has higher efficiency and lesser power conversion. In this work is proposed a new integrated power electronics converter able to connect a Distributed Generation (DG) unit with a hybrid dc

Zhou, Yaoqi

405

Abstract--Environmentally friendly technologies such as photovoltaics and fuel cells are DC sources. In the current power  

E-Print Network [OSTI]

Abstract--Environmentally friendly technologies such as photovoltaics and fuel cells are DC sources in pollution [1]. The most well-known green technologies include photovoltaics and wind turbines. Although fuel, fuel cells and photovoltaics, produce direct current (DC). Currently, power system infrastructures

Tolbert, Leon M.

406

Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk  

SciTech Connect (OSTI)

Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

2014-11-07T23:59:59.000Z

407

The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa  

SciTech Connect (OSTI)

We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

Özduran, Mustafa [Ahi Evran Üniversitesi Fen Edebiyat Fakültesi Fizik Bölümü, K?r?ehir (Turkey); Turgut, Kemal [Yüksek Lisans Ö?rencisi, K?r?ehir (Turkey); Arikan, Nihat [Ahi Evran Üniversitesi E?itim Fakültesi ?lkö?retim Bölümü, K?r?ehir (Turkey); ?yigör, Ahmet; Candan, Abdullah [Ahi Evran Üniversitesi Merkezi Ara?t?rma Laboratuvar?, K?r?ehir (Turkey)

2014-10-06T23:59:59.000Z

408

Reduced lattice temperature high-speed operation of pseudomorphic InGaAdGaAs field-effect transistors  

E-Print Network [OSTI]

,um GaAs buffer, 170 A Ino.zGao,sAs strained channel, 50 A undoped Ale,,,Ga,,,As undoped spacer, S dimensions of 0.25 x 200 pm and 0.5 X 200 pm with a source-drain spacing of 2 ,um. The MODFETs have gate dimensions of 0.35~ 100 pm and 0.47X 100 pm with a source-drain spacing of 1 ,um. The MISFETs have

Kolodzey, James

409

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network [OSTI]

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

410

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect (OSTI)

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

411

The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers  

E-Print Network [OSTI]

have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

412

Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells  

SciTech Connect (OSTI)

We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10?K and 100?K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10?K and 50?K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers.

Badcock, T. J., E-mail: Thomas.badcock@crl.toshiba.co.uk; Dawson, P.; Davies, M. J. [School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

2014-03-21T23:59:59.000Z

413

Testing of ethylene propylene seals for the GA-4/GA-9 casks  

SciTech Connect (OSTI)

The primary O-ring seal of the GA-4 and GA-9 casks was tested for leakage with a full-scale mockup of the cask lid and flange. Tests were performed at temperatures of ambient, {minus}41{degrees}, 121{degrees}, and 193{degrees}C. Shim plates between the lid and flange simulated gaps caused by thermal distortion. The testing used a helium mass spectrometer leak detector (MSLD). Results showed that the primary seal was leaktight for all test conditions. Helium permeation through the seal began in 13--23 minutes for the ambient tests and in 1--2 minutes for the tests at elevated temperatures. After each test several hours of the pumping were typically required to reduce the MSLD background reading to an acceptable level for the next test, indicating that the seal had become saturated with helium. To verify that the test results showed permeation and not real leakage, several response checks were conducted in which a calibrated leak source was inserted in the detector line near the seal. When the leak source was activated the detector responded within seconds.

Boonstra, R.H.

1993-08-01T23:59:59.000Z

414

Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment  

SciTech Connect (OSTI)

The influence of alloy clustering on fluctuations in the ground state energy of the two-dimensional electron gas (2DEG) in AlGaN/GaN and InAlN/GaN heterostructures is studied. We show that because of these fluctuations, alloy clustering degrades the mobility even when the 2DEG wavefunction does not penetrate the alloy barrier unlike alloy disorder scattering. A comparison between the results obtained for AlGaN/GaN and InAlN/GaN heterostructures shows that alloy clustering limits the 2DEG mobility to a greater degree in InAlN/GaN heterostructures. Our study also reveals that the inclusion of an AlN interlayer increases the limiting mobility from alloy clustering. Moreover, Atom probe tomography is used to demonstrate the random nature of the fluctuations in the alloy composition.

Ahmadi, Elaheh; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States); Chalabi, Hamidreza [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Kaun, Stephen W.; Shivaraman, Ravi; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2014-10-07T23:59:59.000Z

415

A Five-Level Three-Phase Hybrid Cascade Multilevel Inverter Using a Single DC Source  

E-Print Network [OSTI]

A Five-Level Three-Phase Hybrid Cascade Multilevel Inverter Using a Single DC Source for a PM to construct a 3-phase 5-level cascade multilevel inverter to be used as a drive for a PM traction motor. The 5-level inverter consists of a standard 3-leg inverter (one leg for each phase) and an H-bridge in series

Tolbert, Leon M.

416

INVESTIGATION OF ELECTRIC CONDITIONS IN THE VICINITY OF CARBON NANOTUBES GROWN IN A DC PLASMA SHEATH  

E-Print Network [OSTI]

nanotubes (CNTs ­ long tubular carbon nanostructures) belong to the best electron field emitting materials, such as nanoelectronics devices or mechanical reinforcement in composite materials [2,3]. The field emission propertiesINVESTIGATION OF ELECTRIC CONDITIONS IN THE VICINITY OF CARBON NANOTUBES GROWN IN A DC PLASMA

Boyer, Edmond

417

Electron-deformation mechanism of photoexcitation of hypersound in semiconductors in a dc electric field  

SciTech Connect (OSTI)

The effect of a dc electric field on photoexcitation of a hypersonic pulse in a semiconductor via an electron-deformation mechanism is studied. The profiles of acoustic pulses are simulated for different directions of the electric field. (laser applications and other topics in quantum electronics)

Chigarev, N V [International Laser Center, M. V. Lomonosov Moscow State University, Moscow (Russian Federation)

2002-09-30T23:59:59.000Z

418

Observation and cancellation of the dc Stark shift in strontium optical lattice clocks  

E-Print Network [OSTI]

1 Observation and cancellation of the dc Stark shift in strontium optical lattice clocks J fre- quency shift at the 10-13 level by comparing two strontium optical lattice clocks. This frequency candidates for future optical frequency references. Among them, the development of strontium lattice clocks

Paris-Sud XI, Université de

419

Rotary Electrodynamics of a DC Motor: Motor as Mechanical Capacitor Lab 2: Modeling and System Identification  

E-Print Network [OSTI]

). · im is the current through the motor. Because the motor is in series with all other electrical). Because power is conserved, m = Kmim (motor efficiency is actually closer to 69%). Here, Km 0.00767 VRotary Electrodynamics of a DC Motor: Motor as Mechanical Capacitor Lab 2: Modeling and System

420

Copyright 2011 American Chemical Society 1155 Sixteenth Street N.W., Washington, DC 20036  

E-Print Network [OSTI]

Copyright © 2011 American Chemical Society 1155 Sixteenth Street N.W., Washington, DC 20036 For Selected: Application of Highly Ordered TiO2 Nanotube Arrays in Flexible Dye-Sensitized Solar Cells Daibin Light-Emitting Diodes on Solution-Processed Graphene Transparent Electrodes Junbo Wu, Mukul Agrawal, H

Aksay, Ilhan A.

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

A Comparison of the AC and DC Power Flow Models for LMP Calculations  

E-Print Network [OSTI]

A Comparison of the AC and DC Power Flow Models for LMP Calculations Thomas J. Overbye, Xu Cheng power flow model for LMP-based market calculations. The paper first provides a general discussion of balanced, three phase, electric power transmission networks is through the solution of the power flow. From

422

Use of Facility Contractor Employees for Services to DOE in the Washington, D.C., Area  

Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

To clarify and modify policies and procedures for management of Department of Energy (DOE), including National Nuclear Security Administration (NNSA), facility contractor employees located in the Washington, D.C., area. Cancels DOE N 350.5. Certified 12-28-06. Canceled by DOE O 350.2A.

2001-07-12T23:59:59.000Z

423

Electrical detection of spin pumping: dc voltage generated by ferromagnetic resonance at ferromagnet/nonmagnet contact  

E-Print Network [OSTI]

Electrical detection of spin pumping: dc voltage generated by ferromagnetic resonance We describe electrical detection of spin pumping in metallic nanostructures. In the spin pumping effect, a precessing ferromagnet attached to a normal metal acts as a pump of spin-polarized current

van der Wal, Caspar H.

424

New Global Alliance Formed to Undercut Illegal WASHINGTON, DC, May 26, 2010 (ENS) -To reduce trade  

E-Print Network [OSTI]

New Global Alliance Formed to Undercut Illegal Logging WASHINGTON, DC, May 26, 2010 (ENS. "Some companies are not aware of the need to ask questions about the wood they are buying than on the performance of individual companies, and will complement existing initiatives that certify

425

Optical Investigations of Dust Particles Distribution in RF and DC Discharges  

SciTech Connect (OSTI)

Optical emission spectroscopy is used to study dust particles movement and conditions of a formation of ordered plasma-dust structures in a capacitively coupled RF discharge. 3D binocular diagnostics of plasma-dust structures in dc discharge was made.

Ramazanov, T. S.; Dosbolayev, M. K.; Jumabekov, A. N.; Amangaliyeva, R. Zh. [Al-Farabi Kazakh National University, IETP, 96a Tole Bi St., Almaty 050012 (Kazakhstan); Filatova, I. I.; Azharonok, V. V. [B. I. Stepanov Institute of Physics NAS of Belarus, Nezavisimosti Ave., 68, 220072, Minsk (Belarus)

2008-09-07T23:59:59.000Z

426

Save the Date for ACES 2014! Washington D.C. | December 811, 2014  

E-Print Network [OSTI]

methods and experiences relating to Ecosystem Services. Specific themes to be ad dressed include that ACES: A Community on Ecosystem Services, in partner ship with the Ecosystem Markets Community and the Ecosystem Services Partnership, will host the ACES 2014 Conference in Washington, DC, December 811, 2014

Watson, Craig A.

427

Proceedings IEEE International Test Conference, Washington, DC, 1990 Generating Pseudo-Exhaustive Vectors for External Testing  

E-Print Network [OSTI]

Proceedings IEEE International Test Conference, Washington, DC, 1990 Generating Pseudo-Exhaustive Vectors for External Testing S. Hellebrand, H.-J. Wunderlich, O. F. Haberl Institute of Computer Design. Germany Abstract In the past years special chips for external test have been suc- cessfully used

Hellebrand, Sybille

428

Investigation of DC distribution by measuring and modelling power supply devices for buildings with PV  

E-Print Network [OSTI]

requiring power transformation components. Since any type of load can be potentially fed with direct current panels without any power transformation seems to be obvious, nevertheless, precise simulations needInvestigation of DC distribution by measuring and modelling power supply devices for buildings

Paris-Sud XI, Université de

429

Performance test results for the Eaton dc developmental power train in an electric test bed vehicle  

SciTech Connect (OSTI)

This report presents the results of the tests performed on a direct current (dc) power train in a test bed vehicle developed by the Eaton Corporation for the US Department of Energy (DOE). The tests were performed by EG and G Idaho, Inc. at the Idaho National Engineering Laboratory (INEL). The purpose of the INEL testing was to provide test results from which an evaluation of the performance capabilities of the Eaton dc power train could be made and compared with other vehicle propulsion systems. The planned tests were primarily oriented toward road testing, chassis dynamometer testing, and associated dynamometer coastdown tests for road loss determination. Range tests of the Eaton dc test bed vehicle using an ALCO 2200 lead acid battery pack, produced ranges of 97 km at 56 km/h (60 miles at 35 mph), 79 km at 72 km/h (49 miles at 45 mph), and 47 km at 88 km/h (29 miles at 55 mph). The corresponding net dc energy consumptions are 135 Wh/km (217 Wh/mile), 145 Wh/km (233 Wh/mile), and 178 Wh/km (287 Wh/mile). The energy consumption for the D-cycle test was 241 Wh/km (387 Wh/mile). 8 refs., 11 figs., 16 tabs.

Crumley, R.L.; Donaldson, M.R.

1987-09-01T23:59:59.000Z

430

D.C. WRRC Report No.41 DIRECTORY OF WATER-RELATED  

E-Print Network [OSTI]

D.C. WRRC Report No.41 #12;#12;DIRECTORY OF WATER-RELATED ORGANIZATIONS IN THE DISTRICT OF COLUMBIA 1982 Preparations of the directory was supported in part by Federal funds from the Office of Water. The directory of water-related organizations in the District of Columbia has been prepared as part

District of Columbia, University of the

431

Control of a Fuel-Cell Powered DC Electric Vehicle Motor Federico Zenith  

E-Print Network [OSTI]

Control of a Fuel-Cell Powered DC Electric Vehicle Motor Federico Zenith Sigurd Skogestad Introduction Research in fuel cells receives currently a lot of interest. Fuel cells can be used, in different. However, the dynamics of fuel cells has received comparatively less attention. Control of fuel cells

Skogestad, Sigurd

432

HIDDEN DAMAGE DETECTION FOR MAIN CABLES OF SUSPENSION BRIDGES INCORPORATING DC MAGNETIZATION WITH A SEARCH COIL-  

E-Print Network [OSTI]

with artificially inflicted broken wires. KEYWORDS : Cable NDE, Search coil, Total flux, DC magnetization, Damage. To overcome this limitation, this study proposes a noncontact cable inspection system incorporating been applied for the inspection of steel cables for ski lifts, elevators, and for other applications

Boyer, Edmond

433

Policy Research Working Paper 4844, World Bank, Washington DC, April 2009 Weakly Relative Poverty  

E-Print Network [OSTI]

Policy Research Working Paper 4844, World Bank, Washington DC, April 2009 Weakly Relative Poverty, 20433, USA Abstract: Prevailing measures of relative poverty are unchanged when all incomes grow that relax these assumptions. On calibrating our measures to national poverty lines and survey data, we find

Krivobokova, Tatyana

434

IEEE Photovoltaic Specialists Conference Washington, D.C., May 13-17, 1996  

E-Print Network [OSTI]

IEEE Photovoltaic Specialists Conference Washington, D.C., May 13-17, 1996 NICHE MARKETS FOR GRID-CONNECTED PHOTOVOLTAICS Howard Wenger Pacific Energy Group Walnut Creek, CA, USA Christy Herig & Roger Taylor National- Sited Photovoltaics (CSPV) in the United States. 1 The intent is to demonstrate markets that are cost

Perez, Richard R.

435

AC PV Modules Take a standard DC PV module and connect a microinverter  

E-Print Network [OSTI]

modules. These inverters range in power from 700 watts up to 1 megawatt. DC maximum system voltages can and up to 13 inverters for the 210 W version to be installed on the same AC output cable. home power 136, and secure a listing to UL1741 for a pre-assembled module/inverter device, and you have an AC PV module

Johnson, Eric E.

436

First National Conference on Carbon Sequestration Washington, DC, May 14-17, 2001  

E-Print Network [OSTI]

First National Conference on Carbon Sequestration Washington, DC, May 14-17, 2001 Caldeira, K for Research on Ocean Carbon Sequestration (DOCS) *Climate and Carbon Cycle Modeling Group, Lawrence Livermore carbon sequestration strategy. Therefore, we want to understand the effectiveness of oceanic injection

437

Living downtown in Washington, D.C. : defining residential community in the city center  

E-Print Network [OSTI]

In Washington D.C., as in many other American cities, a significant section of the downtown is distinguished by boarded-up buildings and vacant lots. In spite of traces of a city plan that could organize and accommodate a ...

Allen, Robin P. (Robin Porter)

1995-01-01T23:59:59.000Z

438

Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence  

SciTech Connect (OSTI)

Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

Schmidt, Gordon, E-mail: Gordon.Schmidt@ovgu.de; Müller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jürgen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg (Germany); Glauser, Marlene; Carlin, Jean-François; Cosendey, Gatien; Butté, Raphaël; Grandjean, Nicolas [Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

2014-07-21T23:59:59.000Z

439

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network [OSTI]

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

440

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes  

SciTech Connect (OSTI)

The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

2010-01-15T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Maskless lateral epitaxial overgrowth of GaN on sapphire  

SciTech Connect (OSTI)

The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

1999-07-01T23:59:59.000Z

442

Pulsed laser annealing of Be-implanted GaN  

SciTech Connect (OSTI)

Postimplantation thermal processing of Be in molecular-beam-epitaxy-grown GaN by rapid thermal annealing (RTA) and pulsed laser annealing (PLA) was investigated. It has been found that the activation of Be dopants and the repair of implantation-induced defects in GaN films cannot be achieved efficiently by conventional RTA alone. On the other hand, good dopant activation and surface morphology and quality were obtained when the Be-implanted GaN film was annealed by PLA with a 248 nm KrF excimer laser. However, observations of off-resonant micro-Raman and high-resolution x-ray-diffraction spectra indicated that crystal defects and strain resulting from Be implantation were still existent after PLA, which probably degraded the carrier mobility and limited the activation efficiency to some extent. This can be attributed to the shallow penetration depth of the 248 nm laser in GaN, which only repaired the crystal defects in a thin near-surface layer, while the deeper defects were not annealed out well. This situation was significantly improved when the Be-implanted GaN was subjected to a combined process of PLA followed by RTA, which produced good activation of the dopants, good surface morphology, and repaired bulk and surface defects well.

Wang, H.T.; Tan, L.S.; Chor, E.F. [Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

2005-11-01T23:59:59.000Z

443

22209_HPC_cvr_FL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLasDelivered‰PNGExperience hands-onASTROPHYSICS H.CarbonMarch Value of the

444

Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors  

SciTech Connect (OSTI)

Two schemes of nucleation and growth of gallium nitride on Si(111) substrates are investigated and the structural and electrical properties of the resulting films are reported. Gallium nitride films grown using a 10{endash}500 nm-thick AlN buffer layer deposited at high temperature ({similar_to}1050{degree}C) are found to be under 260{endash}530 MPa of tensile stress and exhibit cracking, the origin of which is discussed. The threading dislocation density in these films increases with increasing AlN thickness, covering a range of 1.1 to {gt}5.8{times}10{sup 9}cm{sup {minus}2}. Films grown using a thick, AlN-to-GaN graded buffer layer are found to be under compressive stress and are completely crack free. Heterojunction field effect transistors fabricated on such films result in well-defined saturation and pinch-off behavior with a saturated current of {similar_to}525 mA/mm and a transconductance of {similar_to}100 mS/mm in dc operation. {copyright} 2001 American Institute of Physics.

Marchand, H.; Zhao, L.; Zhang, N.; Moran, B.; Coffie, R.; Mishra, U. K.; Speck, J. S.; DenBaars, S. P.; Freitas, J. A.

2001-06-15T23:59:59.000Z

445

Data:5df914dc-748a-4757-980d-c7fa8bd9d9fe | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office695810186 No revision has been approved for this page. It1f847bdc66d-c7fa8bd9d9fe No revision has been approved

446

Data:065fb21d-c75b-4a75-860e-13fd93d1dc6e | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentratingRenewable Solutions6ae4e73fc No revision hasb9e2-8af452ac6862 Noa75-860e-13fd93d1dc6e

447

Data:Dc67dc28-a58d-434e-bd5b-bf00a13198f9 | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Pagec-01b596aa1744 No revisionDbdad3b1-04dc-40cd-843e-921faaade910 No revisionb82a5cccd0d8 No revision has been approved

448

Impact of quasi-dc currents on three-phase distribution transformer installations. Power Systems Technology Program  

SciTech Connect (OSTI)

This report summarizes a series of tests designed to determine the response of quasi-dc currents on three-phase power distribution transformers for electric power systems. In general, if the dc injection is limited to the primary side of a step-down transformer, significant harmonic distortion is noted and an increase in the reactive power demand results. For dc injection on the secondary (load) side of the step-down transformer the harmonic content at the secondary side is quite high and saturation occurs with a relatively low level of dc injection; however, the reactive power demand is significantly lower. These tests produced no apparent damage to the transformers. Transformer damage is dependent on the duration of the dc excitation, the level of the excitation, and on thermal characteristics of the transfer. The transformer response time is found to be much shorter than seen in power transformer tests at lower dc injection levels. This shorter response time suggests that the response time is strongly dependent on the injected current levels, and that higher levels of dc injection for shorter durations could produce very high reactive power demands and harmonic distortion within a few tenths of a second. The added reactive power load could result in the blowing of fuses on the primary side of the transformer for even moderate dc injection levels, and neutral currents are quite large under even low-level dc injection. This ``smoking neutral`` results in high-level harmonic injection into equipment via the neutral and in possible equipment failure.

McConnell, B.W.; Barnes, P.R. [Oak Ridge National Lab., TN (United States); Tesche, F.M. [Tesche (F.M.), Dallas, TX (United States); Schafer, D.A. [Mission Research Corp., Albuquerque, NM (United States)

1992-06-01T23:59:59.000Z

449

GaAs-based high temperature electrically pumped polariton laser  

SciTech Connect (OSTI)

Strong coupling effects and polariton lasing are observed at 155?K with an edge-emitting GaAs-based microcavity diode with a single Al{sub 0.31}Ga{sub 0.69}As/Al{sub 0.41}Ga{sub 0.59}As quantum well as the emitter. The threshold for polariton lasing is observed at 90?A/cm{sup 2}, accompanied by a reduction of the emission linewidth to 0.85?meV and a blueshift of the emission wavelength by 0.89?meV. Polariton lasing is confirmed by the observation of a polariton population redistribution in momentum space and spatial coherence. Conventional photon lasing is recorded in the same device at higher pump powers.

Baten, Md Zunaid; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu; Frost, Thomas; Deshpande, Saniya; Das, Ayan [Center for Photonic and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Lubyshev, Dimitri; Fastenau, Joel M.; Liu, Amy W. K. [IQE, Inc., 119 Technology Drive, Bethlehem, Pennsylvania 18015 (United States)

2014-06-09T23:59:59.000Z

450

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect (OSTI)

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

451

AlP/GaP distributed Bragg reflectors  

SciTech Connect (OSTI)

Distributed Bragg reflectors with high reflectivity bands centered at wavelengths from 530 to 690 nm (green to red) based on AlP/GaP quarter-wave stacks are prepared on (001)GaP using gas-source molecular-beam epitaxy. Additionally, the complex refractive index of AlP is measured using spectroscopic ellipsometry within the range of 330-850 nm in order to facilitate an accurate reflector design. Structures consisting of 15 quarter-wave stacks reach a peak reflectance between 95% and 98%, depending on the spectral position of the maximum.

Emberger, Valentin; Hatami, Fariba; Ted Masselink, W. [Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15, D-12489 Berlin (Germany); Peters, Sven [Sentech Instruments GmbH, Schwarzschildstr. 2, 12489 Berlin (Germany)

2013-07-15T23:59:59.000Z

452

Graphene/GaN diodes for ultraviolet and visible photodetectors  

SciTech Connect (OSTI)

The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

2014-08-18T23:59:59.000Z

453

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions  

E-Print Network [OSTI]

We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity ...

Hisaka, Takayuki

454

Electric field engineering in GaN high electron mobility transistors  

E-Print Network [OSTI]

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

455

Site-controlled fabrication of Ga nanodroplets by focused ion beam  

SciTech Connect (OSTI)

Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

Xu, Xingliang; Wang, Zhiming M., E-mail: zhmwang@gmail.com [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Wu, Jiang; Li, Handong; Zhou, Zhihua [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Xiaodong [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2014-03-31T23:59:59.000Z

456

Device-level thermal analysis of GaN-based electronics  

E-Print Network [OSTI]

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

Bagnall, Kevin Robert

2013-01-01T23:59:59.000Z

457

Light extraction in individual GaN nanowires on Si for LEDs  

E-Print Network [OSTI]

GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

Zhou, Xiang

458

High performance double pulse doped pseudomorphic AlGaAs/InGaAs transistors grown by molecular-beam epitaxy  

SciTech Connect (OSTI)

Double pulse doped AlGaAs/InGaAs pseudomorphic high electron mobility transistors have been grown by molecular-beam epitaxy on GaAs substrates. Hall mobilities in excess of 7100 cm{sup 2}/V s at 300 K and 25000 cm{sup 2}/V s at 77 K are obtained with a sheet density of 3 x 10{sup 12} cm{sup {minus}2}. Photoluminescence measurements indicate that two electronic subbands are occupied, and the subband energies are determined. The doping pulses are resolved in secondary ion mass spectrometry measurements. Using a double recess process, transistors have been fabricated that have produced state of the art microwave performance. At 10 GHz a 1.2 mm device has simultaneously achieved a power added efficiency of 70%, output power of 0.97 W, and gain of 10 dB. 17 refs., 5 figs., 1 tab.

Hoke, W.E.; Lyman, P.S.; Labossier, W.H.; Brierley, S.K.; Hendriks, H.T.; Shanfield, S.R.; Aucoin, L.M.; Kazior, T.E. [Raytheon Research Division, Lexington, MA (United States)] [Raytheon Research Division, Lexington, MA (United States)

1992-05-01T23:59:59.000Z

459

Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures  

SciTech Connect (OSTI)

We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel [National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101 (Philippines); Garcia, Alipio [Department of Physical Sciences, University of the Philippines, Baguio City 2600 (Philippines)

2009-06-08T23:59:59.000Z

460

High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

Young, N. G., E-mail: ngyoung@engineering.ucsb.edu; Farrell, R. M.; Iza, M.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Perl, E. E.; Keller, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Bowers, J. E.; Nakamura, S.; DenBaars, S. P. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2014-04-21T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence  

SciTech Connect (OSTI)

We present an investigation of the degradation of InGaN/GaN laser diodes grown on a GaN substrate. The results indicate that: (i) Ageing induces a significant increase in the threshold current (Ith) of the lasers, which is attributed to an increase in non-radiative recombination; (ii) Ith increase is correlated to a decrease in the micro-cathodoluminescence signal measured (after the removal of the top metallization) in the region under the ridge; (iii) micro-photoluminescence measurements indicate that constant current stress increases non-radiative recombination within the quantum wells (and not only within the barriers), and induces an increase in the emission wavelength of the degraded region.

Meneghini, M., E-mail: matteo.meneghini@dei.unipd.it; Carraro, S.; Meneghesso, G.; Trivellin, N.; Zanoni, E. [Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy)] [Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy); Mura, G. [University of Cagliari, Piazza d'Armi, 09123 Cagliari (Italy)] [University of Cagliari, Piazza d'Armi, 09123 Cagliari (Italy); Rossi, F.; Salviati, G. [IMEM-National Council of Research, Parco Area delle Scienze 37/A, 43124 Parma (Italy)] [IMEM-National Council of Research, Parco Area delle Scienze 37/A, 43124 Parma (Italy); Holc, K.; Weig, T.; Wagner, J. [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany)] [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany); Schade, L.; Karunakaran, M. A. [IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany)] [IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany); Schwarz, U. T. [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany) [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany); IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany)

2013-12-02T23:59:59.000Z

462

Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells  

SciTech Connect (OSTI)

We demonstrate THz intersubband absorption (15.6–26.1?meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14?meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a??40% reduction in the linewidth (from roughly 8 to 5?meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

Edmunds, C.; Malis, O., E-mail: omalis@purdue.edu [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Shao, J. [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Shirazi-HD, M. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, M. J. [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2014-07-14T23:59:59.000Z

463

Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes  

SciTech Connect (OSTI)

The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3?nm–6?nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200?A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelength we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.

Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Zhang, Shuming; Li, Deyao; Zhang, Liqun; Yang, Hui [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Cai, Jin; Wang, Hui; Wang, H. B. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Suzhou Nanojoin Photonics Co., Ltd., Suzhou (China)

2014-10-27T23:59:59.000Z

464

Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer  

SciTech Connect (OSTI)

We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Université, BP 239, 54506 Vandoeuvre (France)

2014-04-07T23:59:59.000Z

465

Ions in solution: Density corrected density functional theory (DC-DFT)  

SciTech Connect (OSTI)

Standard density functional approximations often give questionable results for odd-electron radical complexes, with the error typically attributed to self-interaction. In density corrected density functional theory (DC-DFT), certain classes of density functional theory calculations are significantly improved by using densities more accurate than the self-consistent densities. We discuss how to identify such cases, and how DC-DFT applies more generally. To illustrate, we calculate potential energy surfaces of HO·Cl{sup ?} and HO·H{sub 2}O complexes using various common approximate functionals, with and without this density correction. Commonly used approximations yield wrongly shaped surfaces and/or incorrect minima when calculated self consistently, while yielding almost identical shapes and minima when density corrected. This improvement is retained even in the presence of implicit solvent.

Kim, Min-Cheol; Sim, Eunji, E-mail: esim@yonsei.ac.kr [Department of Chemistry and Institute of Nano-Bio Molecular Assemblies, Yonsei University, 50 Yonsei-ro Seodaemun-gu, Seoul 120-749 (Korea, Republic of)] [Department of Chemistry and Institute of Nano-Bio Molecular Assemblies, Yonsei University, 50 Yonsei-ro Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Burke, Kieron [Department of Chemistry, University of California, Irvine, California 92697 (United States)] [Department of Chemistry, University of California, Irvine, California 92697 (United States)

2014-05-14T23:59:59.000Z

466

Demonstration of Cathode Emittance Dominated High Bunch Charge Beams in a DC gun-based Photoinjector  

E-Print Network [OSTI]

We present the results of transverse emittance and longitudinal current profile measurements of high bunch charge (greater than or equal to 100 pC) beams produced in the DC gun-based Cornell Energy Recovery Linac Photoinjector. In particular, we show that the cathode thermal and core beam emittances dominate the final 95% and core emittance measured at 9-9.5 MeV. Additionally, we demonstrate excellent agreement between optimized 3D space charge simulations and measurement, and show that the quality of the transverse laser distribution limits the optimal simulated and measured emittances. These results, previously thought achievable only with RF guns, demonstrate that DC gun based photoinjectors are capable of delivering beams with sufficient single bunch charge and beam quality suitable for many current and next generation accelerator projects such as Energy Recovery Linacs (ERLs) and Free Electron Lasers (FELs).

Gulliford, Colwyn; Bazarov, Ivan; Dunham, Bruce; Cultrera, Luca

2015-01-01T23:59:59.000Z

467

Switch contact device for interrupting high current, high voltage, AC and DC circuits  

DOE Patents [OSTI]

A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

2005-01-04T23:59:59.000Z

468

Efficiency consideration of DC link soft-switching inverters for motor drive applications  

SciTech Connect (OSTI)

This paper critically evaluates efficiency of soft switching inverters including an actively clamped resonant dc link inverter and a clamped-mode resonant pole inverter. An analytical approach to evaluating efficiency of the clamped-mode soft switching inverter has been developed. The evaluation results are compared with that of the standard pulse-width-modulation (PWM) inverter. A 50-kW induction motor is used as the variable load, and the inverter efficiency is evaluated under different speed and torque conditions. The clamped-mode soft-switching inverter, although eliminating the switching loss, shows poor efficiency over the entire load range. Under low load conditions, the efficiency profile is even worse. The actively clamped resonant dc link inverter shows highest efficiency over the entire speed and torque range. However, its energy saving over the standard PWM inverter is marginal under full load or high speed conditions.

Lai, J.S.; Young, R.W.; McKeever, J.W.

1994-12-31T23:59:59.000Z

469

Parallel 3D Finite Element Numerical Modelling of DC Electron Guns  

SciTech Connect (OSTI)

In this paper we present Gun3P, a parallel 3D finite element application that the Advanced Computations Department at the Stanford Linear Accelerator Center is developing for the analysis of beam formation in DC guns and beam transport in klystrons. Gun3P is targeted specially to complex geometries that cannot be described by 2D models and cannot be easily handled by finite difference discretizations. Its parallel capability allows simulations with more accuracy and less processing time than packages currently available. We present simulation results for the L-band Sheet Beam Klystron DC gun, in which case Gun3P is able to reduce simulation time from days to some hours.

Prudencio, E.; Candel, A.; Ge, L.; Kabel, A.; Ko, K.; Lee, L.; Li, Z.; Ng, C.; Schussman, G.; /SLAC

2008-02-04T23:59:59.000Z

470

DC-like Phase Space Manipulation and Particle Acceleration Using Chirped AC Fields  

SciTech Connect (OSTI)

Waves in plasmas can accelerate particles that are resonant with the wave. A DC electric field also accelerates particles, but without a resonance discrimination, which makes the acceleration mechanism profoundly different. We investigate the effect on a Hamiltonian distribution of an accelerating potential waveform, which could, for example, represent the average ponderomotive effect of two counterpropagating electromagnetic waves. In particular, we examine the apparent DC-like time-asymptotic response of the distribution in regimes where the potential structure is accelerated adiabatically. A highly resonant population within the distribution is always present, and we characterize its nonadiabatic response during wave-particle resonance using an integral method in the noninertial reference frame moving with the wave. Finally, we show that in the limit of infinitely slow acceleration of the wave, these highly resonant particles disappear and the response

P.F. Schmit and N.J. Fisch

2009-06-17T23:59:59.000Z

471

Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system.  

SciTech Connect (OSTI)

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a unique flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected two-dimensional (2D)-2D tunneling results, we have found additional tunneling features that are related to the one-dimensional quantum wires.

Seamons, John Andrew; Lilly, Michael Patrick; Reno, John Louis; Bielejec, Edward Salvador

2004-11-01T23:59:59.000Z

472

1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m?{center_dot}cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW{center_dot}cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

Zhu, Mingda [University of Notre Dame, IN (United States); Song, Bo [Cornell University, Ithaca, NY (United States); Qi, Meng [University of Notre Dame, IN (United States); Hu, Zongyang [University of Notre Dame, IN (United States); Nomoto, Kazuki [University of Notre Dame, IN (United States); Yan, Xiaodong [University of Notre Dame, IN (United States); Cao, Yu [IQE/HRL Labs; Johnson, Wayne [IQE, Westborough, MA (United States); Kohn, Erhard [University of Notre Dame, IN (United States); Jena, Debdeep [Cornell University, Ithaca, NY (United States); Xing, Grace Huili [Cornell University, Ithaca, NY (United States)

2015-04-01T23:59:59.000Z

473

Method of measuring the dc electric field and other tokamak parameters  

DOE Patents [OSTI]

A method including externally imposing an impulsive momentum-space flux to perturb hot tokamak electrons thereby producing a transient synchrotron radiation signal, in frequency-time space, and the inference, using very fast algorithms, of plasma parameters including the effective ion charge state Z.sub.eff, the direction of the magnetic field, and the position and width in velocity space of the impulsive momentum-space flux, and, in particular, the dc toroidal electric field.

Fisch, Nathaniel J. (Princeton, NJ); Kirtz, Arnold H. (Princeton Junction, NJ)

1992-01-01T23:59:59.000Z

474

Round-robin artificial contamination test on high voltage dc insulators  

SciTech Connect (OSTI)

This paper summarizes the results of a worldwide round-robin test of high voltage dc (HVDC) insulators, which was carried out in six laboratories aiming at standardization of the method for artificial contamination tests on HVDC insulators. Flashover characteristics of three kinds of specimens were evaluated by the clean fog and the salt fog procedures. Sufficient information is now available to allow the preparation of provisional international specifications for artificial contamination testing of HVDC insulators.

Naito, K.; Schneider, H.M.

1995-07-01T23:59:59.000Z

475

Development studies of a solid-state d.c. circuit breaker based on the GTO  

E-Print Network [OSTI]

Circuit Breaker . . . . . 37 D. Metal-Oxide Varistors in DC Circuit Breaker Applications 42 E. Variable Resistor Characteristics Implemented with a Semiconductor Device . . . . . . . . . . . 43 VI CAPACITIVE CIRCUIT BREAKER 45 VII SWITCHED SNUBBER... maintenance rate and low reliability. The separation of contacts under load draws an electric arc at a relatively high d. c. voltage which serves to dissipate the circuit stored energy. Because of this, the metal contacts suffer from pitting and erosion...

Kernaghan, William Henry

1986-01-01T23:59:59.000Z

476

Method and apparatus for generating radiation utilizing DC to AC conversion with a conductive front  

DOE Patents [OSTI]

Method and apparatus for generating radiation of high power, variable duration and broad tunability over several orders of magnitude from a laser-ionized gas-filled capacitor array. The method and apparatus convert a DC electric field pattern into a coherent electromagnetic wave train when a relativistic ionization front passes between the capacitor plates. The frequency and duration of the radiation is controlled by the gas pressure and capacitor spacing.

Dawson, John M. (Pacific Palisades, CA); Mori, Warren B. (Hermosa Beach, CA); Lai, Chih-Hsiang (So. Pasadena, CA); Katsouleas, Thomas C. (Malibu, CA)

1998-01-01T23:59:59.000Z

477

Method and apparatus for generating radiation utilizing DC to AC conversion with a conductive front  

DOE Patents [OSTI]

Method and apparatus ar disclosed for generating radiation of high power, variable duration and broad tunability over several orders of magnitude from a laser-ionized gas-filled capacitor array. The method and apparatus convert a DC electric field pattern into a coherent electromagnetic wave train when a relativistic ionization front passes between the capacitor plates. The frequency and duration of the radiation is controlled by the gas pressure and capacitor spacing. 4 figs.

Dawson, J.M.; Mori, W.B.; Lai, C.H.; Katsouleas, T.C.

1998-07-14T23:59:59.000Z

478

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a  

E-Print Network [OSTI]

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a , Guohua Li b , Jerry MP photodiodes fabricated on GaP substrate with unique drift dominated design, which can build an electric field throughout the active region by varying the doping concentration. The InP/GaP photodiodes have been grown

Woodall, Jerry M.

479

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

480

Hexagonal Growth Spirals on GaN Grown by Molecular Beam Epitaxy: Kinetics vs Thermodynamics  

E-Print Network [OSTI]

prepared, Ga-polar GaN(0001) templates. The surface morphology was studied using reflection high-energy-edge energy of 0.26 eV/Ã?. They suggest that local conditions at step edges dominate the growth. 1 conducted ex situ using AFM. Desorption mass spectrometry (DMS) was used to measure the GaN growth rate. Our

Cohen, Philip I.

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a  

E-Print Network [OSTI]

is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

Okamoto, Koichi

482

TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron  

E-Print Network [OSTI]

neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

483

Free carrier induced spectral shift for GaAs filled metallic hole arrays  

E-Print Network [OSTI]

. Soref, and J. A. D. Alamo, "Carrier-induced change in refractive index of InP, GaAs, and InGaAsP," IEEE-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave

New Mexico, University of

484

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy  

E-Print Network [OSTI]

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy A. J. Ptak, L. J-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity

Myers, Tom

485

DC WRRC Report No. 76 Assessment of the Impact of Non-Point Source Pollution on the Anacostia River  

E-Print Network [OSTI]

Model for Urban Water Quality (AMUWQ, Geological Survey, through the D.C. Water Resources Research Center." "The Contents of the publication do of trade names or commercial products constitute their endorsement by the United States Government." #12

District of Columbia, University of the

486

Residential Energy Efficiency Research Planning Meeting Summary Report: Washington, D.C. - October 27-28, 2011  

SciTech Connect (OSTI)

This report summarizes key findings and outcomes from the U.S. Department of Energy's Building America Residential Energy Efficiency Research Planning meeting, held on October 28-29, 2011, in Washington, D.C.

Not Available

2012-02-01T23:59:59.000Z

487

Quantitative study of macroscopic quantum tunneling in a dc SQUID: A system with two degrees of freedom  

E-Print Network [OSTI]

To test whether the theory of macroscopic quantum tunneling (MQT) is applicable to systems with 2 degrees of freedom, we experimentally investigated the switching current distribution of a dc SQUID. Using sample parameters determined from...

Li, Shaoxiong; Yu, Yang; Zhang, Y.; Qiu, W.; Han, Siyuan; Wang, Z.

2002-08-01T23:59:59.000Z

488

Vehicle Technologies Office Merit Review 2014: DC Fast Charging Effects on Battery Life and EVSE Efficiency and Security Testing  

Broader source: Energy.gov [DOE]

Presentation given by Idaho National Laboratory at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about DC fast charging...

489

A High Frequency Isolated Current-fed Bidirectional DC/AC Converter For Grid-Tied Energy Storage System  

E-Print Network [OSTI]

tied energy storage systems (ESS) will be voltage to a high-DC/AC converter to interface ESS based on low voltage cellscharging and discharging of the ESS and the control strategy

King Jet, TSENG

2013-01-01T23:59:59.000Z

490

Hardware model of a shipboard zonal electrical distribution system (ZEDS) : alternating current/direct current (AC/DC)  

E-Print Network [OSTI]

A hardware model of a shipboard electrical distribution system based on aspects of the DDG 51 Flight IIA, Arleigh Burke class, 60Hz Alternating Current (AC) and the future direct current (DC), zonal electrical distribution ...

Tidd, Chad N. (Chad Norman)

2010-01-01T23:59:59.000Z

491

A Generalized Class of Stationary Frame-Current Controllers for Grid-Connected AC–DC Converters  

E-Print Network [OSTI]

Within power systems, high-power pulsewidth-modulated ac-dc converters are used in flexible ac transmission systems controllers and for interfacing renewable energy sources to the grid. These converters traditionally ...

Hwang, J. George

492

Design and performance evaluation of an electric go-kart and custom permanent magnet brushless DC motor  

E-Print Network [OSTI]

This undergraduate thesis documents the design considerations and specifications of building a personal battery-powered go-kart. This includes designing and building a custom brushless DC motor for use in the drivetrain. ...

Davis, Eli Marc

2012-01-01T23:59:59.000Z

493

The design of a hybrid DC motor/SMA actuated robotic hand based on physiological and anatomical synergies  

E-Print Network [OSTI]

A new approach to the design and control of multi-fingered hands using hybrid DC motor-Shape Memory Alloy (SMA) array actuators is presented in this thesis. The fundamental design concept is based on the principle of motor ...

Rosmarin, Josiah Benjamin

2008-01-01T23:59:59.000Z

494

Weatherization Program is a Capital Idea for Washington, D.C.: Weatherization Assistance Close-Up Fact Sheet  

SciTech Connect (OSTI)

Washington, D.C. demonstrates its commitment to technology and efficiency through the Weatherization Program. Weatherization uses advanced technologies and techniques to reduce energy costs for low-income families by increasing the energy efficiency of their homes.

D& R International

2001-10-10T23:59:59.000Z

495

232 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 17, NO. 2, MARCH 2002 Current Control Strategy for Brushless DC Motors  

E-Print Network [OSTI]

synchronous motor (PMSM), which is fed with sinusoidal currents 2) brushless dc motor (BDCM), which is fed, the power-to-weight ratio of PMSM and BDCM is higher than equivalent squirrel cage induction machines

Catholic University of Chile (Universidad Católica de Chile)

496

Properties of H, O and C in GaN  

SciTech Connect (OSTI)

The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

Pearton, S.J.; Abernathy, C.R.; Lee, J.W. [Univ. of Florida, Gainesville, FL (United States)] [and others

1996-04-01T23:59:59.000Z

497

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical  

E-Print Network [OSTI]

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical Higher Education: An XP Report. Epema, An Experience Report on Using Gamification in Technical Higher Education, ACM SIGCSE'14. http's not you, it's me · New ambition of GamificationU (Top-20 Eng/Tech*) ·

Iosup, Alexandru

498

Ohmic contacts to p-type GaP  

E-Print Network [OSTI]

thickness used in this scheme. The samples were annealed for I @n at temperatures ranging from 3 5 0 to 4 5 0 'C. Lower values of the contact resistivity than those of the Si/Pd/Zn/Pd/p-GaP scheme were achieved by depositing an Aluminum layer on the top...

Jorge Estevez, Humberto Angel

1996-01-01T23:59:59.000Z

499

Gallium Arsenide (GaAs) EDWARD D. PALIK  

E-Print Network [OSTI]

constants of pure (semi-insulating) GaAs are derived from a number of papers including the far-infrared at. [4]; the near-IR work of Pikhtin and Yas'kov [5]; the calorim- etry work of Christensen et al. [6 reflection work of Philipp and Ehrenreich [9]; and the synchrotron transmission work of Cardona et al. [10

Pulfrey, David L.

500

Theory of weak localization in ferromagnetic (Ga,Mn)As  

E-Print Network [OSTI]

We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence-band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn...

Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

2009-01-01T23:59:59.000Z