Sample records for dc fl ga

  1. Charge and fluence lifetime measurements of a dc high voltage GaAs photogun at high average current

    SciTech Connect (OSTI)

    J. Grames, R. Suleiman, P.A. Adderley, J. Clark, J. Hansknecht, D. Machie, M. Poelker, M.L. Stutzman

    2011-04-01T23:59:59.000Z

    GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, and (d) by applying a relatively low bias voltage to the anode to repel ions created within the downstream beam line. A combination of these techniques provided the best total charge extracted lifetimes in excess of 1000 C at dc beam currents up to 9.5 mA, using green light illumination of bulk GaAs inside a 100 kV photogun.

  2. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04T23:59:59.000Z

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  3. dc field-emission analysis of GaAs and plasma-source ion-implanted stainless steel

    SciTech Connect (OSTI)

    C. Hernandez; T. Wang; T. Siggins; D. Bullard; H. F. Dylla; C. Reece; N. D. Theodore; D. M. Manos

    2003-06-01T23:59:59.000Z

    Field-emission studies have been performed on a GaAs wafer and a sample of its stainless-steel (SS) support electrode that are part of a photocathode gun for the 10 kW Upgrade infrared free electron laser at Jefferson Lab. The objective of the studies presented here is to characterize the effect of both the cleanliness of the wafer and the plasma-source ion-implanted layer on the electrode to suppress field emission. Field emission is the limiting factor to achieve the required 6 MV/m at the surface of the wafer. Potential field emitters are first located on the surface of 1 in. diameter samples with a dc scanning field-emission microscope at 60 MV/m, then each emitter is characterized in a scanning electron microscope equipped with an energy dispersive spectrometer. The GaAs wafer was hydrogen cleaned before the study. The results show three emitters caused by indium contamination during wafer handling. The GaAs wafer thus shows good high-voltage characteristics and the need to maintain cleanliness during handling. The SS sample is hand polished with diamond paste to a 1-m surface finish, then implanted with N2/SiO2 in a plasma-source ion-implantation chamber in preparation for the field-emission studies.

  4. Optical and digital GaAs technologies for signal-processing applications; Proceedings of the Meeting, Orlando, FL, Apr. 16-18, 1990

    SciTech Connect (OSTI)

    Bendett, M.P.; Butler, D.H., Jr.; Prabhakar, A.; Yang, A.; (Honeywell, Inc., Minneapolis, MN; Booz, Allen and Hamilton, Inc., Bethesda, MD; DARPA, Arlington, VA)

    1990-01-01T23:59:59.000Z

    Practical problems that need to be solved for the introduction of optical modules into processing systems are reviewed. Some papers deal with the state of the art in such key devices as Bragg cells, spatial light modulators, and fast CCDs. Issues unique to optical packaging are also highlightened. New architectures to enable real-time operations are demonstrated, and optical interconnects for parallel processors are discussed. Particular attention is given to the status and operational advantages of government-sponsored efforts to upgrade existing military systems with digital GaAs signal processors and the state of the art in computer-aided design and advanced system architectures.

  5. Stochastic dynamic systems fl T. Soderstrom, 1997

    E-Print Network [OSTI]

    Flener, Pierre

    Stochastic dynamic systems Chapter 5 c fl T. S¨oderstr¨om, 1997 1 Optimal estimation ffl The conditional mean ffl Best linear estimate ffl ML estimation c fl T. S¨oderstr¨om, 1997 2 Optimal estimation criterion 2. Symmetric cond pdf c fl T. S¨oderstr¨om, 1997 3 Best linear estimate Given Ex = mx ; Ey = my E

  6. Monolithically Peltier-cooled vertical-cavity surface-emitting lasers Paul FL Berger, Niloy K. Dutta, Kent D. Choquette, Ghulam Hasnain, and Naresh Chand

    E-Print Network [OSTI]

    Monolithically Peltier-cooled vertical-cavity surface-emitting lasers Paul FL Berger, Niloy K. The thermoelectric element is the n + -GaAs substrate based on the Peltier effect. A variation of active region contact on the n + -GaAs substrate. The thermoelectric (Peltier) ef- fect of the n f -GaAs substrate can

  7. Stochastic dynamic systems fl T. Soderstrom, 1997

    E-Print Network [OSTI]

    Flener, Pierre

    Stochastic dynamic systems Chapter 2 c fl T. S¨oderstr¨om, 1997 1 Some probability theory ffl Basic facts ffl Conditional distributions ffl Complex­valued Gaussian variables c fl T. S¨oderstr¨om, 1997 2) increasing ffl limx!1 F(x) = 1 ffl lim x!\\Gamma1 F (x) = 0 c fl T. S¨oderstr¨om, 1997 3 Random variables

  8. Stochastic dynamic systems fl T. Soderstrom, 1997

    E-Print Network [OSTI]

    Flener, Pierre

    Stochastic dynamic systems Chapter 10 c fl T. S¨oderstr¨om, 1997 1 Optimal stochastic control ffl controllers c fl T. S¨oderstr¨om, 1997 2 Optimal stochastic control ­ some illustrative examples System x¨oderstr¨om, 1997 3 Optimal stochastic control ­ Deterministic system Criterion J = x 2 (N) = [ax(N \\Gamma 1) + bu

  9. Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat

    E-Print Network [OSTI]

    Shepelyansky, Dima

    Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

  10. Bi-directional dc-dc Converter

    Broader source: Energy.gov (indexed) [DOE]

    Purpose of Work for FY08 1. Vehicle modeling, simulation, and operation voltages optimization. 2. DC-DC Power converter and control modeling. 3. Silicon Carbide device...

  11. Bi-directional dc-dc Converter

    Broader source: Energy.gov (indexed) [DOE]

    MTBF Dc-dc Fabrication Validation Data Performance Validation BOM and Cost analysis EMIEMC Custom Components Fabrication Components Validation Vehicle System Review Phase-I...

  12. FUPWG Meeting Agenda - Destin, FL | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Destin, FL FUPWG Meeting Agenda - Destin, FL Going coastal for energy efficiency. FUPWG. April 15-16, 2008, Destin, Florida Gulf Power: A Southern Company FEMP logo April 15-16,...

  13. ARIZONA STATE UNIVERSITY STETSON UNIVERSITY Phoenix, AZ Deland, FL

    E-Print Network [OSTI]

    Wu, Shin-Tson

    English Literature English BOWLING GREEN STATE UNIVERSITY Bowling Green, OH SYRACUSE UNIVERSITY IndustrialARIZONA STATE UNIVERSITY STETSON UNIVERSITY Phoenix, AZ Deland, FL Interdisciplinary Studies Leadership FLORIDA STATE UNIVERSITY Instructional Systems Design Tallahassee, FL Interdisciplinary Studies

  14. Radio frequency dc-dc power conversion

    E-Print Network [OSTI]

    Rivas, Juan, 1976-

    2007-01-01T23:59:59.000Z

    THIS THESIS addresses the development of system architectures and circuit topologies for dc-dc power conversion at very high frequencies. The systems architectures that are developed are structured to overcome limitations ...

  15. Stochastic dynamic systems fl T. Soderstrom, 1997

    E-Print Network [OSTI]

    Flener, Pierre

    Stochastic dynamic systems Chapter 9 c fl T. S¨oderstr¨om, 1997 1 Nonlinear filtering ffl Extended(t)H(t)P(tjt \\Gamma 1) ?? x(t + 1jt) = f(t; ?? x(tjt)) F(t) = @f(t;x) @x fi fi fi x=??x(tjt) G(t) = g(t; x)j x=??x(tjt) P

  16. Category:Miami, FL | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty EditCalifornia:Power LPInformationCashtonGo Back toFL" The following 16 files

  17. DC source assemblies

    DOE Patents [OSTI]

    Campbell, Jeremy B; Newson, Steve

    2013-02-26T23:59:59.000Z

    Embodiments of DC source assemblies of power inverter systems of the type suitable for deployment in a vehicle having an electrically grounded chassis are provided. An embodiment of a DC source assembly comprises a housing, a DC source disposed within the housing, a first terminal, and a second terminal. The DC source also comprises a first capacitor having a first electrode electrically coupled to the housing, and a second electrode electrically coupled to the first terminal. The DC source assembly further comprises a second capacitor having a first electrode electrically coupled to the housing, and a second electrode electrically coupled to the second terminal.

  18. AlGaN/GaN High Electron Mobility Transistor degradation under on-and off-state stress

    E-Print Network [OSTI]

    Florida, University of

    power operation of GaN HEMTs can also result in substantial self-heating, which will reduce the 2DEG of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611, United States c Department ATLAS/Blaze simula- tions show that the maximum electric field is similar for all gate lengths

  19. Building Scale DC Microgrids

    E-Print Network [OSTI]

    Marnay, Chris

    2013-01-01T23:59:59.000Z

    resources, a 10 kW vertical axis wind turbine, and Fig. 4AC-grid Fig. 3. Vertical axis wind turbine in the AIT DC

  20. Building Scale DC Microgrids

    E-Print Network [OSTI]

    Marnay, Chris

    2014-01-01T23:59:59.000Z

    resources, a 10 kW vertical axis wind turbine, and Fig. 4the grid Fig. 3. Vertical axis wind turbine in the AIT DC

  1. Multilevel DC link inverter

    DOE Patents [OSTI]

    Su, Gui-Jia

    2003-06-10T23:59:59.000Z

    A multilevel DC link inverter and method for improving torque response and current regulation in permanent magnet motors and switched reluctance motors having a low inductance includes a plurality of voltage controlled cells connected in series for applying a resulting dc voltage comprised of one or more incremental dc voltages. The cells are provided with switches for increasing the resulting applied dc voltage as speed and back EMF increase, while limiting the voltage that is applied to the commutation switches to perform PWM or dc voltage stepping functions, so as to limit current ripple in the stator windings below an acceptable level, typically 5%. Several embodiments are disclosed including inverters using IGBT's, inverters using thyristors. All of the inverters are operable in both motoring and regenerating modes.

  2. 150W.UniversityBlvd. Melbourne,FL32901

    E-Print Network [OSTI]

    Wood, Stephen L.

    150W.UniversityBlvd. Melbourne,FL32901 321-674-8000 NickAbruzzini Junior,Ocean Engineering JanelleBoisvert Junior,Ocean Engineering KatieDobek Junior, Ocean Engineering Anthony Tedeschi Junior,Ocean Engineering

  3. DC attenuation meter

    DOE Patents [OSTI]

    Hargrove, Douglas L.

    2004-09-14T23:59:59.000Z

    A portable, hand-held meter used to measure direct current (DC) attenuation in low impedance electrical signal cables and signal attenuators. A DC voltage is applied to the signal input of the cable and feedback to the control circuit through the signal cable and attenuators. The control circuit adjusts the applied voltage to the cable until the feedback voltage equals the reference voltage. The "units" of applied voltage required at the cable input is the system attenuation value of the cable and attenuators, which makes this meter unique. The meter may be used to calibrate data signal cables, attenuators, and cable-attenuator assemblies.

  4. A global maximum power point tracking DC-DC converter

    E-Print Network [OSTI]

    Duncan, Joseph, 1981-

    2005-01-01T23:59:59.000Z

    This thesis describes the design, and validation of a maximum power point tracking DC-DC converter capable of following the true global maximum power point in the presence of other local maximum. It does this without the ...

  5. SALT-flSH INPUSTRIES FISHERY LEAFLET 240

    E-Print Network [OSTI]

    SALT-flSH INPUSTRIES FISHERY LEAFLET 240 FISH AND WILDLIFE SERVICE UNITED STATES DEPARTMENT, Albert M. Day, Director #12;THE VENEZUKLAN SALT-FISH INDUSTRIES CONTE^fTS Part II Potential Productive and Craft 29 Development of Unused or Underutilized Species 29 Development of New Areas 35 Salt 35 Studies

  6. CPDD 2011 Annual Meeting June 22, 2011 Hollywood, FL

    E-Print Network [OSTI]

    Murphy, Susan A.

    Improve maternal and infant outcomes Conduct clinical research to generate new knowledge to improve Setting CAP Clinical Outcome ResearchNo CAP Treatment (n=100) (n=46) Clinical measure: Prenatal visits 8 4 CPDD 2011 Annual Meeting June 22, 2011 Hollywood, FL Outline 1. Complexities of the Problem 2. Clinical

  7. Lecture #5: The Language FL October 4, 2007

    E-Print Network [OSTI]

    Gifford, David K.

    ' language, that transforms the FL language back down into expres- sions in FLK. And then we can describe you won't fault me for writing it out again here. A question from the back of the room: Is he saying alpha-substitution, and expressions which are the same up to an alpha transformation of their bound

  8. Wet-Nanotechnology: fl id t NIUnanofluids at NIU

    E-Print Network [OSTI]

    Kostic, Milivoje M.

    .kostic.niu.edu 4 Mechanical Engineering NORTHERN ILLINOIS UNIVERSITY #12;One Step Nanofluid Production ImprovementOne-Step Nanofluid Production Improvement Insulated and vertically-adjustable boat- heater evaporator NIU with i fl id heater evaporatorLaboratoryLaboratory S.S. ChoiChoi J. Hull,J. Hull, and othersand others

  9. International Conference on Multiphase Flow, ICMF 2010, Tampa, FL, May 30 June 4, 2010

    E-Print Network [OSTI]

    Dabiri, John O.

    7th International Conference on Multiphase Flow, ICMF 2010, Tampa, FL, May 30 June 4, 2010 Shock Conference on Multiphase Flow, ICMF 2010, Tampa, FL, May 30 June 4, 2010 Us Shock speed (m s-1 ) x Spatial

  10. DC arc weld starter

    DOE Patents [OSTI]

    Campiotti, Richard H. (Tracy, CA); Hopwood, James E. (Oakley, CA)

    1990-01-01T23:59:59.000Z

    A system for starting an arc for welding uses three DC power supplies, a high voltage supply for initiating the arc, an intermediate voltage supply for sustaining the arc, and a low voltage welding supply directly connected across the gap after the high voltage supply is disconnected.

  11. RF Power Degradation of GaN High Electron Mobility Transistors

    E-Print Network [OSTI]

    Joh, Jungwoo

    We have developed a versatile methodology to systematically investigate the RF reliability of GaN High-Electron Mobility Transistors. Our technique utilizes RF and DC figures of merit to diagnose the degradation of RF ...

  12. Auxiliary resonant DC tank converter

    DOE Patents [OSTI]

    Peng, Fang Z. (Knoxville, TN)

    2000-01-01T23:59:59.000Z

    An auxiliary resonant dc tank (ARDCT) converter is provided for achieving soft-switching in a power converter. An ARDCT circuit is coupled directly across a dc bus to the inverter to generate a resonant dc bus voltage, including upper and lower resonant capacitors connected in series as a resonant leg, first and second dc tank capacitors connected in series as a tank leg, and an auxiliary resonant circuit comprising a series combination of a resonant inductor and a pair of auxiliary switching devices. The ARDCT circuit further includes first clamping means for holding the resonant dc bus voltage to the dc tank voltage of the tank leg, and second clamping means for clamping the resonant dc bus voltage to zero during a resonant period. The ARDCT circuit resonantly brings the dc bus voltage to zero in order to provide a zero-voltage switching opportunity for the inverter, then quickly rebounds the dc bus voltage back to the dc tank voltage after the inverter changes state. The auxiliary switching devices are turned on and off under zero-current conditions. The ARDCT circuit only absorbs ripples of the inverter dc bus current, thus having less current stress. In addition, since the ARDCT circuit is coupled in parallel with the dc power supply and the inverter for merely assisting soft-switching of the inverter without participating in real dc power transmission and power conversion, malfunction and failure of the tank circuit will not affect the functional operation of the inverter; thus a highly reliable converter system is expected.

  13. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  14. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

    1998-01-01T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  15. High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

    SciTech Connect (OSTI)

    Koblmueller, G. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Walter Schottky Institut, Technische Universitaet Muenchen, D-85748 Garching (Germany); Chu, R. M.; Raman, A.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Speck, J. S. [Department of Materials, University of California, Santa Barbara, California 93106 (United States)

    2010-02-15T23:59:59.000Z

    We present combined in situ thermal cleaning and intentional doping strategies near the substrate regrowth interface to produce high-quality AlGaN/GaN high electron mobility transistors on semi-insulating (0001) GaN templates with low interfacial impurity concentrations and low buffer leakage. By exposing the GaN templates to an optimized thermal dissociation step in the plasma-assisted molecular beam epitaxy environment, oxygen, carbon, and, to lesser extent, Si impurities were effectively removed from the regrowth interface under preservation of good interface quality. Residual Si was further compensated by C-doped GaN via CBr{sub 4} to yield highly resistive GaN buffer layers. Improved N-rich growth conditions at high growth temperatures were then utilized for subsequent growth of the AlGaN/GaN device structure, yielding smooth surface morphologies and low residual oxygen concentration with large insensitivity to the (Al+Ga)N flux ratio. Room temperature electron mobilities of the two-dimensional electron gas at the AlGaN/GaN interface exceeded >1750 cm{sup 2}/V s and the dc drain current reached {approx}1.1 A/mm at a +1 V bias, demonstrating the effectiveness of the applied methods.

  16. Power flow analysis for DC voltage droop controlled DC microgrids

    E-Print Network [OSTI]

    Chaudhary, Sanjay

    loss, such as photovoltaic panels, batteries, fuel cells, LEDs, and electronic loads, DC microgrids sharing and secondary voltage regulation can now be analytically studied, and specialized optimization of the DC microgrid, in term of systematic analysis, protection coordination design, network optimization

  17. S M Stoller Star Center-WWNA Monthly; Largo, FL

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA groupTuba City, Arizona, DisposalFourthN V O 1 8B100B100WWNA Monthly; Largo, FL

  18. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current- spreading experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN

  19. Triple voltage dc-to-dc converter and method

    DOE Patents [OSTI]

    Su, Gui-Jia (Knoxville, TN)

    2008-08-05T23:59:59.000Z

    A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

  20. DC-DC converter current source fed naturally commutated brushless DC motor drive

    E-Print Network [OSTI]

    Khopkar, Rahul Vijaykumar

    2004-11-15T23:59:59.000Z

    inductor and the huge number of turns needed to achieve these values of the inductances lead to huge resistive losses. Therefore, it is shown that it is possible to replace the controlled rectifier and the large inductor with a suitable dc-dc converter...

  1. DC WRRC REPORT NO. 115 Conference Proceedings

    E-Print Network [OSTI]

    District of Columbia, University of the

    DC WRRC REPORT NO. 115 Conference Proceedings: An Agenda for Black Universities and Colleges. Kargbo Conference Sponsored by The DC Water Resources Research Center University of the District

  2. Bi-Directional DC-DC Converter for PHEV Applications

    SciTech Connect (OSTI)

    Abas Goodarzi

    2011-01-31T23:59:59.000Z

    Plug-In Hybrid Electric Vehicles (PHEV) require high power density energy storage system (ESS) for hybrid operation and high energy density ESS for Electric Vehicle (EV) mode range. However, ESS technologies to maximize power density and energy density simultaneously are not commercially feasible. The use of bi-directional DC-DC converter allows use of multiple energy storage, and the flexible DC-link voltages can enhance the system efficiency and reduce component sizing. This will improve fuel consumption, increase the EV mode range, reduce the total weight, reduce battery initial and life cycle cost, and provide flexibility in system design.

  3. Convergence Analysis of DC Algorithm for DC programming with ...

    E-Print Network [OSTI]

    2010-09-14T23:59:59.000Z

    In this paper, we consider DC programming with subanalytic data. ... Lojasiewicz inequality is an ingredient tool in Subanalytic Geometry as well as in its ... us list some of the elementary properties of subanalytic sets and subanalytic functions...

  4. Directions from MCO to Hilton University of Florida Starting from: Orlando International Airport MCO, Orlando, FL

    E-Print Network [OSTI]

    Slatton, Clint

    Directions from MCO to Hilton University of Florida Starting from: Orlando International Airport MCO, Orlando, FL Arriving at: Hilton University of Florida (1714 SW 34th St. Gainesville, FL 32607-4138) Distance: 120.4 miles Approximate Travel Time: 2 hours 29 min 1. Exit MCO on AIRPORT BLVD E - go 0.7 mi 2

  5. Catalog of DC Appliances and Power Systems

    SciTech Connect (OSTI)

    Garbesi, Karina; Vossos, Vagelis; Shen, Hongxia

    2010-10-13T23:59:59.000Z

    This document catalogs the characteristics of current and potential future DC products and power systems.

  6. Catalog of DC Appliances and Power Systems

    E-Print Network [OSTI]

    Garbesi, Karina

    2012-01-01T23:59:59.000Z

    energy efficient products that utilize DC power internally; the demonstrated energy savings of direct-DC in commercial data centers;energy efficient products that utilize DC power internally, the demonstrated energy savings of direct-DC power use in commercial data centers,

  7. Proceedings of the US Hydrographic Conference, Tampa, FL, 25-28 Apr 2011 THE PORT OF NORFOLK PROJECT

    E-Print Network [OSTI]

    New Hampshire, University of

    Proceedings of the US Hydrographic Conference, Tampa, FL, 25-28 Apr 2011 1 THE PORT OF NORFOLK;Proceedings of the US Hydrographic Conference, Tampa, FL, 25-28 Apr 2011 2 Background Creating raster

  8. American Statistical Association Announces 2011 Award Recipients Awards ceremony to be held at Joint Statistical Meetings in Miami Beach, FL

    E-Print Network [OSTI]

    Washington at Seattle, University of

    American Statistical Association Announces 2011 Award Recipients Awards ceremony to be held at Joint Statistical Meetings in Miami Beach, FL MIAMI BEACH, FL (PRWEB) AUGUST 1, 2011 The American Statistical Association (ASA), the nation's preeminent professional statistical society, today announced

  9. Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application

    SciTech Connect (OSTI)

    Ren, F.; Abernathy, C.R.; Pearton, S.J.; Lothian, J.R.; Wisk, P.W.; Fullowan, T.R.; Youngkai Chen (AT and T Bell Labs., Murray Hill, NJ (United States)); Yang, L.W.; Fu, S.T.; Brozovich, R.S. (General Electric Co., Syracuse, NY (USSR))

    1993-07-01T23:59:59.000Z

    As an alternative to AlGaAs/GaAs heterojunction bipolar transistors (HBT's) for microwave applications, InGaP/ GaAs HBT's with carbon-doped base layers grown by metal organic molecular beam epitaxy (MOMBE) are demonstrated with excellent dc, RF, and microwave performance. As previously reported, with a 700-[angstrom]-thick base layer (135-[Omega]/[open square] sheet resistance), a dc current gain of 25, and cutoff frequency and maximum frequency of oscillation above 70 GHz were measured for a 2 [times] 5-[mu]m[sup 2] emitter area device. A device with 12 cells, each consisting of a 2 [times] 15-[mu] m[sup 2] emitter area device for a total emitter area of 360 [mu] m[sup 2], was power tested at 4 GHz under continuous-wave (CW) bias condition. The device delivered 0.6-W output power with 13-dB linear gain and a power-added efficiency of 50%.

  10. Switching coordination of distributed dc-dc converters for highly efficient photovoltaic power plants

    DOE Patents [OSTI]

    Agamy, Mohammed; Elasser, Ahmed; Sabate, Juan Antonio; Galbraith, Anthony William; Harfman Todorovic, Maja

    2014-09-09T23:59:59.000Z

    A distributed photovoltaic (PV) power plant includes a plurality of distributed dc-dc converters. The dc-dc converters are configured to switch in coordination with one another such that at least one dc-dc converter transfers power to a common dc-bus based upon the total system power available from one or more corresponding strings of PV modules. Due to the coordinated switching of the dc-dc converters, each dc-dc converter transferring power to the common dc-bus continues to operate within its optimal efficiency range as well as to optimize the maximum power point tracking in order to increase the energy yield of the PV power plant.

  11. Light-weight DC to very high voltage DC converter

    DOE Patents [OSTI]

    Druce, Robert L. (Union City, CA); Kirbie, Hugh C. (Dublin, CA); Newton, Mark A. (Livermore, CA)

    1998-01-01T23:59:59.000Z

    A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current.

  12. Light-weight DC to very high voltage DC converter

    DOE Patents [OSTI]

    Druce, R.L.; Kirbie, H.C.; Newton, M.A.

    1998-06-30T23:59:59.000Z

    A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current. 1 fig.

  13. AC and DC power transmission

    SciTech Connect (OSTI)

    Not Available

    1985-01-01T23:59:59.000Z

    The technical and economic assessment of AC and DC transmission systems; long distance transmission, cable transmission, system inter-connection, voltage support, reactive compensation, stabilisation of systems; parallel operation of DC links with AC systems; comparison between alternatives for particular schemes. Design and application equipment: design, testing and application of equipment for HVDC, series and shunt static compensated AC schemes, including associated controls. Installations: overall design of stations and conductor arrangements for HVDC, series and shunt static AC schemes including insulation co-ordination. System analysis and modelling.

  14. DC to DC power converters and methods of controlling the same

    DOE Patents [OSTI]

    Steigerwald, Robert Louis; Elasser, Ahmed; Sabate, Juan Antonio; Todorovic, Maja Harfman; Agamy, Mohammed

    2012-12-11T23:59:59.000Z

    A power generation system configured to provide direct current (DC) power to a DC link is described. The system includes a first power generation unit configured to output DC power. The system also includes a first DC to DC converter comprising an input section and an output section. The output section of the first DC to DC converter is coupled in series with the first power generation unit. The first DC to DC converter is configured to process a first portion of the DC power output by the first power generation unit and to provide an unprocessed second portion of the DC power output of the first power generation unit to the output section.

  15. ASME 2008 Summer Heat transfer Conference August 10-14, 2008, Jacksonville, FL., USA

    E-Print Network [OSTI]

    Bahrami, Majid

    ASME 2008 Summer Heat transfer Conference August 10-14, 2008, Jacksonville, FL., USA HT2008, University of Victoria Victoria, BC , V8W 2Y2, Canada ABSTRACT Accurate information on the temperature eld

  16. ASME Symposium on Modeling and Control Electrohydraulic Systems, Orlando, FL. November, 2000

    E-Print Network [OSTI]

    Li, Perry Y.

    ASME Symposium on Modeling and Control Electrohydraulic Systems, Orlando, FL. November, 2000 1 not present in previous models. The model has been coded in Simulink and experimentally validated. I

  17. Matematik Dnyas>, 2005 K>fl ahit Arf'> tan>ma mutluluuna erdim. ok

    E-Print Network [OSTI]

    Sertz, Ali Sinan

    in tan>m> akl>mda kal- m>fl. nemli bir fley syleyeceinin ayr>m>nda olan insanlar>n tavr>yla bana do

  18. Student Disability Services 240 O'Leary Library , 61 Wilder Street Fl-2

    E-Print Network [OSTI]

    Massachusetts at Lowell, University of

    Student Disability Services 240 O'Leary Library , 61 Wilder Street Fl-2 Lowell, Massachusetts 01854 Disability Services 240 O'Leary Library, 61 Wilder Street Lowell, MA 01854 Disability@uml.edu Phone: (978

  19. DOE Zero Energy Ready Home Case Study, e2Homes, Winterpark, FL...

    Broader source: Energy.gov (indexed) [DOE]

    Winter Park, FL that scored HERS 57 without PV or HERS -7 with PV. This 4,305 ft2 custom home has autoclaved aerated concrete walls, a sealed attic with R-20 spray foam, and...

  20. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N- GaN built-in junctions in the n-GaN layer for InGaN/GaN: N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN

  1. Catalog of DC Appliances and Power Systems

    E-Print Network [OSTI]

    Garbesi, Karina

    2012-01-01T23:59:59.000Z

    main conclusions about off-grid markets for DC appliances,and power systems. Mature Off-Grid Markets for DC Appliancesapplications include off-grid residential, telecom, remote

  2. Catalog of DC Appliances and Power Systems

    E-Print Network [OSTI]

    Garbesi, Karina

    2012-01-01T23:59:59.000Z

    DC Conversion Loss Savings of Appliances Running on DirectConversion Loss Savings of Appliances Running on Direct DCrunning on AC and, in column B, the avoided AC-DC conversions losses

  3. Catalog of DC Appliances and Power Systems

    E-Print Network [OSTI]

    Garbesi, Karina

    2012-01-01T23:59:59.000Z

    DC solar-powered DC air-conditioning heat pump produced byRoom Air Conditioners Geothermal Heat Pumps Lighting-efficiency of an air source electric heat-pump water heater

  4. Catalog of DC Appliances and Power Systems

    E-Print Network [OSTI]

    Garbesi, Karina

    2012-01-01T23:59:59.000Z

    and energy-savings potential of using direct current (DC) generated by on-site renewablepotential, benefits, and barriers of using DC generated by on-site renewable energy

  5. Rare Earth ? N = N* fs fGHZ fp nH fl

    E-Print Network [OSTI]

    Walter, Frederick M.

    Rare Earth ? #12;N to date N = N* fs fGHZ fp nH fl N* = 4 x 1011 fs = 0.2 fGHZ = 0.1 fp = 0.8 nH = 2 fl = 1.0 N = 1.3 x 1010 #12;The Goldilocks Effect Earth is "Just Right" Yes, life on Earth has adapted to Earth, but ... Earth has just the right mass to be Tectonically-active Retain

  6. DC systems with transformerless converters

    SciTech Connect (OSTI)

    Vithayathil, J.J.; Mittlestadt, W. [Bonneville Power Administration, Portland, OR (United States)] [Bonneville Power Administration, Portland, OR (United States); Bjoerklund, P.E. [ABB Power Systems AB, Ludvika (Sweden)] [ABB Power Systems AB, Ludvika (Sweden)

    1995-07-01T23:59:59.000Z

    A technical and economic feasibility study of HVDC systems without converter transformers is presented. The presentation includes proposed solutions to the drawback related to the absence of galvanic separation between the ac and dc systems, if the converter transformers are eliminated. The results show that HVDC systems without converter transformers are both technically and economically feasible. The cost savings can be substantial.

  7. FEDERAL COMMUNICATIONS COMMISSION Washington, DC

    E-Print Network [OSTI]

    Peha, Jon M.

    1 Before the FEDERAL COMMUNICATIONS COMMISSION Washington, DC GN Docket No. 14-28 In the Matter 15213-3890 peha@cmu.edu July 15, 2014 #12;2 Executive Summary It is important for the Commission situated entity. This policy would particularly benefit new entrepreneurial ventures. The Commission should

  8. FC/Battery Power Management for Electric Vehicle Based Interleaved dc-dc Boost Converter Topology

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    FC/Battery Power Management for Electric Vehicle Based Interleaved dc- dc Boost Converter Topology.fr Keywords Fuel cell System (FCS), Electric vehicle, Energy management, Interleaved Boost DC-DC Converter (FC for electric vehicle may not be feasible to satisfy the peak demand changes especially during accelerations

  9. Design and development of a DC-DC converter for a fuel cell inverter system

    E-Print Network [OSTI]

    Gopinath, Rajesh

    2001-01-01T23:59:59.000Z

    This thesis outlines the design and development of a DC-DC converter for a fuel cell inverter application. The proposed DC-DC converter was designed and tested at Texas A&M to meet the specifications laid down for the '2001 Future Energy Challenge...

  10. Analysis and design of a high power dc-dc converter

    E-Print Network [OSTI]

    Husain, Iqbal

    1989-01-01T23:59:59.000Z

    , for example in dc motors, traction motor control, marine hoist~, trolley cars, forklift trucks, mine haulers, dc voltage regulators etc. These choppers can be used for regeneration in the braking mode of a. dc motor pumping energy back to the system.... The elements of a dc-dc SP C are shown in figure 1. 2. The output voltage is usually regulated by pulse width modulation (PAVM) techniques. Input + V, DC Chopper Output V, Control Amp. V, + Ref. Fig. 1. 2 Block diagram of a SPC dc chopper...

  11. Effect of surface passivation by SiN/SiO{sub 2} of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

    SciTech Connect (OSTI)

    Gassoumi, Malek, E-mail: malek.gassoumi@fsm.rnu.tn; Mosbahi, Hana; Zaidi, Mohamed Ali [Universite deMonastir, Laboratoire de Micro-Optoelectroniques et Nanostructures, Faculte des Sciences de Monastir (Tunisia); Gaquiere, Christophe [Universite des Sciences et Technologies de Lille, Institut d'Electronique de Microelectronique et de Nanotechnologie IEMN, Departement hyperfrequences et Semiconducteurs (France); Maaref, Hassen [Universite deMonastir, Laboratoire de Micro-Optoelectroniques et Nanostructures, Faculte des Sciences de Monastir (Tunisia)

    2013-07-15T23:59:59.000Z

    Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO{sub 2} passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO{sub 2} film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device.

  12. Active dc filter for HVDC systems

    SciTech Connect (OSTI)

    Zhang, W. (Royal Inst. of Tech., Stockholm (Sweden)); Asplund, G.

    1994-01-01T23:59:59.000Z

    This article is a case history of the installation of active dc filters for high-performance, low-cost harmonics filtering at the Lindome converter station in the Konti-Skan 2 HVDC transmission link between Denmark and Sweden. The topics of the article include harmonics, interference, and filters, Lindome active dc filter, active dc filter design, digital signal processor, control scheme, protection and fault monitoring, and future applications.

  13. Computer-aided optimization of DC/DC converters for automotive applications

    E-Print Network [OSTI]

    Neugebauer, Timothy C.

    This paper investigates computer-aided optimization of DC/DC converters, with a focus on converters for dual-voltage automotive electrical systems. A new CAD optimization approach based on Monte Carlo search methods is ...

  14. High efficiency resonant dc/dc converter for solar power applications

    E-Print Network [OSTI]

    Inam, Wardah

    2013-01-01T23:59:59.000Z

    This thesis presents a new topology for a high efficiency dc/dc resonant power converter that utilizes a resistance compression network to provide simultaneous zero voltage switching and near zero current switching across ...

  15. New Architectures for Radio-Frequency DC-DC Power Conversion

    E-Print Network [OSTI]

    Rivas, Juan M.

    This document proposes two new architectures for switched-mode dcdc power conversion. The proposed architectures enable dramatic increases in switching frequency to be realized while preserving features critical in practice, ...

  16. Optimization of Integrated Transistors for Very High Frequency DC-DC Converters

    E-Print Network [OSTI]

    Sagneri, Anthony D.

    This paper presents a method to optimize integrated lateral double-diffused MOSFET transistors for use in very high frequency (VHF, 30-300 MHz) dc-dc converters. A transistor model valid at VHF switching frequencies is ...

  17. DC to DC power conversion module for the all-electric ship

    E-Print Network [OSTI]

    Gray, Weston L

    2011-01-01T23:59:59.000Z

    The MIT end to end electric ship model is being developed to study competing electric ship designs. This project produced a model of a Power Conversion Module (PCM)- 4, DC-to-DC converter which interfaces with the MIT ...

  18. Reliability Assessment of Fault-Tolerant Dc-Dc Converters for Photovoltaic Applications

    E-Print Network [OSTI]

    Liberzon, Daniel

    Reliability Assessment of Fault-Tolerant Dc-Dc Converters for Photovoltaic Applications Sairaj V in photovoltaic energy processing applications is presented. The proposed approach acknowledges the influence through several case studies. Index Terms-- Markov reliability modeling, photovoltaic systems, power

  19. High-Efficiency X-Band MMIC GaN Power Amplifiers Operating as Rectifiers

    E-Print Network [OSTI]

    Popovic, Zoya

    High-Efficiency X-Band MMIC GaN Power Amplifiers Operating as Rectifiers Michael Litchfield, Scott two 10 x 100j.Lm power combined devices. The MMICs exhibit 67% and 56% power added efficiency at VDD a RF-to-DC efficiency of 64%. The output powers of the two MMIC PAs are around 3.2W. In rectifier mode

  20. Catalog of DC Appliances and Power Systems

    E-Print Network [OSTI]

    Garbesi, Karina

    2012-01-01T23:59:59.000Z

    resistance heating and incandescent lighting, the technologyresistance heating or by DC-favoring heat pump technology (technology (electronic fluorescent and LED). Similarly, heating

  1. Catalog of DC Appliances and Power Systems

    E-Print Network [OSTI]

    Garbesi, Karina

    2012-01-01T23:59:59.000Z

    48V DC , depending on battery bank configuration. Lifetime:Characteristics: Lead-acid battery banks are composed ofto produce the desired battery bank voltage. Typical battery

  2. Towards Fully Integrated High Temperature Wireless Sensors Using GaN-based HEMT Devices

    SciTech Connect (OSTI)

    Kuruganti, Phani Teja [ORNL; Islam, Syed K [ORNL; Huque, Mohammad A [ORNL

    2008-01-01T23:59:59.000Z

    Wireless sensors which are capable of working at extreme environments can significantly improve the efficiency and performance of industrial processes by facilitating better control systems. GaN, a widely researched wide bandgap material, has the potential to be used both as a sensing material and to fabricate control electronics, making it a prime candidate for high temperature integrated wireless sensor fabrication. In this paper we are presenting an experimental study on AlGaN/GaN HEMT's performance at higher temperature (up to 300 C). From test results, DC and microwave parameters at different temperatures were extracted.

  3. The capacitively coupled converter (C) for high power DC-DC conversion

    E-Print Network [OSTI]

    Khan, Shahriar

    1992-01-01T23:59:59.000Z

    THE CAPACITIVELY COUPLED CONVERTER (C3) FOR HIGH POWER DC-DC CONVERSION A Thesis by SHAHRIAR KHAN Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment of the requirements for the degree of MASTER... OF SCIENCE May 1992 Major Subject: Electrical Engineering THE CAPACITIVELY COUPLED CONVERTER (Cs) FOR HIGH POWER DC-DC CONVERSION A Thesis by SHAHRIAR KHAN Approved as to style and content by: Mehrdad Ehsani (Chair of Committee) Prasad Enjeti...

  4. Digitally Controlled Distributed Multiphase DC-DC Converters Xu Zhang, Luca Corradini and Dragan Maksimovic

    E-Print Network [OSTI]

    Digitally Controlled Distributed Multiphase DC-DC Converters Xu Zhang, Luca Corradini and Dragan, corradin, maksimov}@colorado.edu Abstract -- This paper describes a distributed master-slave multiphase DC V-to-12 V input, 1.3 V, 20 A output two-phase synchronous buck converter. Index Terms-- Multiphase

  5. Department of Ocean and Mechanical Engineering 777 Glades Road, Boca Raton, FL 33431

    E-Print Network [OSTI]

    Fernandez, Eduardo

    Department of Ocean and Mechanical Engineering 777 Glades Road, Boca Raton, FL 33431 561.297.3430, fax 561.297.3885 SeaTech ­ The Institute for Ocean & Systems Engineering 101 North Beach Road, Dania of Ocean and Mechanical Engineering at Florida Atlantic University is pleased to announce fellowship

  6. Eddy-current interaction with an ideal crack. II. The inverse problem John FL Bowler

    E-Print Network [OSTI]

    Bowler, John R.

    Eddy-current interaction with an ideal crack. II. The inverse problem John FL Bowler The University 1994) Eddy-current inversion is the process whereby the geometry of a flaw in a metal is derived from eddy-current probe impedance measurements. The approach is based on an optimization scheme that seeks

  7. Theory of eddy current inversion Stephen:J. Nortona) and John FL Bowler

    E-Print Network [OSTI]

    Bowler, John R.

    Theory of eddy current inversion Stephen:J. Nortona) and John FL Bowler University of Surrey) The inverse eddy current problem can be described as the task of reconstructing an unknown distribution of electrical conductivity from eddy-current probe impedance measurements recorded as a function of probe

  8. DOE Zero Energy Ready Home Case Study, e2Homes, Winterpark, FL, Custom Homes

    Broader source: Energy.gov [DOE]

    Case study of a DOE Zero Energy Ready Home in Winter Park, FL that scored HERS 57 without PV or HERS -7 with PV. This 4,305 ft2 custom home has autoclaved aerated concrete walls, a sealed attic with R-20 spray foam, and ductless mini-split heat pumps.

  9. St. Petersburg, FL: Vehicle Use of Recycled Natural Gas Derived from Wastewater Biosolids

    Broader source: Energy.gov [DOE]

    Breakout Session 3AConversion Technologies III: Energy from Our WasteWill we Be Rich in Fuel or Knee Deep in Trash by 2025? St. Petersburg, FL: Vehicle Use of Recycled Natural Gas Derived from Wastewater Biosolids William Eleazer, Supervising Engineer, Brown and Caldwell

  10. FL47CH15-Goldstein ARI 25 November 2014 9:45 Green Algae as Model

    E-Print Network [OSTI]

    Goldstein, Raymond E.

    FL47CH15-Goldstein ARI 25 November 2014 9:45 Green Algae as Model Organisms for Biological Fluid green algae, spanning from the unicellular Chlamydomonas to multicellular Volvox, have emerged as model of flagellar synchronization. Green algae are well suited to the study of such problems because of their range

  11. ANRV400-FL42-05 ARI 9 August 2009 14:52 Slip on Superhydrophobic

    E-Print Network [OSTI]

    Rothstein, Jonathan

    ANRV400-FL42-05 ARI 9 August 2009 14:52 R E V I E W S IN A D V A N CE Slip on Superhydrophobic, simulations, and theory of flow past superhydrophobic surfaces. In addition, the designs and limitations on a special class of materials called superhydrophobic surfaces that have been used recently to engineer large

  12. DC-based magnetic field controller

    DOE Patents [OSTI]

    Kotter, D.K.; Rankin, R.A.; Morgan, J.P.

    1994-05-31T23:59:59.000Z

    A magnetic field controller is described for laboratory devices and in particular to dc operated magnetic field controllers for mass spectrometers, comprising a dc power supply in combination with improvements to a Hall probe subsystem, display subsystem, preamplifier, field control subsystem, and an output stage. 1 fig.

  13. DC-based magnetic field controller

    DOE Patents [OSTI]

    Kotter, Dale K. (Shelley, ID); Rankin, Richard A. (Ammon, ID); Morgan, John P,. (Idaho Falls, ID)

    1994-01-01T23:59:59.000Z

    A magnetic field controller for laboratory devices and in particular to dc operated magnetic field controllers for mass spectrometers, comprising a dc power supply in combination with improvements to a hall probe subsystem, display subsystem, preamplifier, field control subsystem, and an output stage.

  14. High voltage DC power supply

    DOE Patents [OSTI]

    Droege, Thomas F. (Batavia, IL)

    1989-01-01T23:59:59.000Z

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively.

  15. High voltage DC power supply

    DOE Patents [OSTI]

    Droege, T.F.

    1989-12-19T23:59:59.000Z

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively. 7 figs.

  16. AVTA: Battery Testing - DC Fast Charging's Effects on PEV Batteries...

    Energy Savers [EERE]

    DC Fast Charging's Effects on PEV Batteries AVTA: Battery Testing - DC Fast Charging's Effects on PEV Batteries The Vehicle Technologies Office's Advanced Vehicle Testing Activity...

  17. Vehicle Technologies Office Merit Review 2014: DC Fast Charging...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    DC Fast Charging Effects on Battery Life and EVSE Efficiency and Security Testing Vehicle Technologies Office Merit Review 2014: DC Fast Charging Effects on Battery Life and EVSE...

  18. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer

  19. Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP/GaAs heterostructures

    E-Print Network [OSTI]

    Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP September 2007 Utilizing lattice-matched GaAs/InGaP/GaAs heterostructures, clean micromechanical resonators are fabricated and characterized. The nearly perfect selectivity of GaAs/InGaP is demonstrated by realizing

  20. Ga nanoparticle-enhanced photoluminescence of GaAs

    SciTech Connect (OSTI)

    Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-09-02T23:59:59.000Z

    We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

  1. DC High School Science Bowl Regionals

    Broader source: Energy.gov [DOE]

    This event is the Washington, D.C. High School Regional competition for the US National Science Bowl. The regional competition is run by the Office of Economic Impact and Diversity, and the...

  2. DC readout experiment in Enhanced LIGO

    E-Print Network [OSTI]

    Fricke, Tobin T

    The two 4 km long gravitational wave detectors operated by the Laser Interferometer Gravitational-wave Observatory (LIGO) were modified in 2008 to read out the gravitational wave channel using the DC readout form of homodyne ...

  3. Catalog of DC Appliances and Power Systems

    E-Print Network [OSTI]

    Garbesi, Karina

    2012-01-01T23:59:59.000Z

    www.lunera.com/. Nextek Power Systems. [cited 2010 Dec];data_files/. DC Power Systems. Wholesale Price List. [citedDUS103927W.pdf. Princeton Power Systems. GTIB-480-100 Grid-

  4. American Institute of Aeronautics and Astronautics Active System Identification of a DC-DC Converter Using

    E-Print Network [OSTI]

    American Institute of Aeronautics and Astronautics 1 Active System Identification of a DC and Computer Engineering, UCB 425. #12;American Institute of Aeronautics and Astronautics 2 analysis10

  5. Federal Government Congressional Budget Office, Budget Analysis Division Washington, DC

    E-Print Network [OSTI]

    Shyy, Wei

    Charlotte, NC Gallaher Kazakhstan, Security & Brand Integrity Almaty Oblast, Kazakhstan GMMB Washington, DC

  6. Hydrogen Storage Systems Analysis Working Group Meeting Argonne DC Offices

    E-Print Network [OSTI]

    Hydrogen Storage Systems Analysis Working Group Meeting Argonne DC Offices L'Enfant Plaza, Washington, DC December 4, 2007 SUMMARY REPORT Compiled by Romesh Kumar Argonne National Laboratory Working Group Meeting December 4, 2007 Argonne DC Offices, L'Enfant Plaza, Washington, DC Meeting

  7. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01T23:59:59.000Z

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  8. GaAs/InGaP/AlGaAs quantum-well infrared photodetectors

    SciTech Connect (OSTI)

    Keshagupta, P.; Radpour, F. [Univ. of Cincinnati, OH (United States)

    1994-12-31T23:59:59.000Z

    In this paper, a new quantum-well infrared photodetector (QWIP) based on bound-to-miniband transitions in a GaAs/InGaP quantum well with GaAs/AlGaAs short superlattice barriers is presented and compared with the conventional GaAs/InGaP QWIPs. Results of the theoretical calculations of the detector parameters and the preliminary fabrication results of an embedded-well to miniband (EWTMB) GaAs/InGaP/AlGaAs quantum well/superlattice detector are presented. The advantages of the proposed design include improvement of the material quality, ability to adjust the peak wavelength in 8--12 {micro}m range, and in the lower dark current.

  9. Near Time-Optimal Transient Response in DC-DC Buck Converters Taking into Account the Inductor Current Limit

    E-Print Network [OSTI]

    -load transient responses [1-15]. In its simplest form, the TOC responds to a step load change with a singleNear Time-Optimal Transient Response in DC-DC Buck Converters Taking into Account the Inductor transient response of a DC-DC buck converter. The concept of current- limited, time-optimal control (CL

  10. Phase-Shifted Full Bridge DC-DC Converter with Energy Recovery Clamp and Reduced Circulating Current

    E-Print Network [OSTI]

    of the switch conduction and turn-off losses achieved by an energy recovery secondary clamp circuit an improved PSFB DC-DC converter using only a modified energy recovery clamp circuit attached at the secondaryPhase-Shifted Full Bridge DC-DC Converter with Energy Recovery Clamp and Reduced Circulating

  11. RF Power Degradation of GaN High Electron Mobility Transistors Jungwoo Joh and Jess A. del Alamo

    E-Print Network [OSTI]

    del Alamo, Jess A.

    RF Power Degradation of GaN High Electron Mobility Transistors Jungwoo Joh and Jess A. del Alamo Transistors. Our technique utilizes RF and DC figures of merit to diagnose the degradation of RF stressed and to introduce new degradation modes. At high power level, RF stress induces a prominent trapping

  12. Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well

    SciTech Connect (OSTI)

    Asami, T.; Nosho, H.; Tackeuchi, A. [Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555 (Japan); Li, L. H.; Harmand, J. C. [Laboratory for Photonics and Nanostructures-CNRS, Site Alcatel de Marcoussis, Route de Nozay, 91460 Marcoussis (France); Lu, S. L. [Suzhou Institute of Nano-tech and Nano-bionics, CAS, Dushu, Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou 215125 (China)

    2011-12-23T23:59:59.000Z

    We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn{sub 0.36}N{sub 0.006}AsSb{sub 0.015} well, 5-nm-thick GaN{sub 0.01}AsSb{sub 0.11} intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.

  13. A DC-DC Converter-Based PEM Fuel Cell System Emulator

    E-Print Network [OSTI]

    Boyer, Edmond

    power supplies. Fuel cell systems are characterized by high costs and complex auxiliary devices still impose some drawbacks: the cost of fuel cell system tests are expensive (e.g., hydrogenA DC-DC Converter-Based PEM Fuel Cell System Emulator Daoud Rezzak, Farid Khoucha, Mohamed

  14. DC's Marble ceiling : urban height and its regulation in Washington, DC

    E-Print Network [OSTI]

    Trueblood, Andrew Tyson

    2009-01-01T23:59:59.000Z

    Washington, DC has a unique urban form that is the result of a century-old law. Through the narrow lens of DC's height limit, I survey a range of topics related to urban height, starting with a review of its history of ...

  15. Wide input range DC-DC converter with digital control scheme

    E-Print Network [OSTI]

    Harfman Todorovic, Maja

    2006-04-12T23:59:59.000Z

    In this thesis analysis and design of a wide input range DC-DC converter is proposed along with a robust power control scheme. The proposed converter and its control is designed to be compatible to a fuel cell power source, which exhibits 2...

  16. Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles

    SciTech Connect (OSTI)

    Tsai, Jung-Hui, E-mail: jhtsai@nknucc.nknu.edu.tw [National Kaohsiung Normal University, Department of Electronic Engineering, Taiwan (China); Guo, Der-Feng [Air Force Academy, Department of Electronic Engineering, Taiwan (China); Lour, Wen-Shiung [National Taiwan Ocean University, Department of Electrical Engineering, Taiwan (China)

    2011-09-15T23:59:59.000Z

    In this article, the comparison of DC performance on InGaP/GaAs pseudomorphic field-effect transistors with tripe doped-channel profiles is demonstrated. As compared to the uniform and high-medium-low doped-channel devices, the low-medium-high doped-channel device exhibits the broadest gate voltage swing and the best device linearity because more twodimensional electron gases are formed in the heaviest doped channel to enhance the magnitude of negative threshold voltage. Experimentally, the transconductance within 50% of its maximum value for gate voltage swing is 4.62 V in the low-medium-high doped-channel device, which is greater than 3.58 (3.30) V in the uniform (high-medium-low) doped-channel device.

  17. Cont. Rot. Rot. DC Cont. Rot. Rot. DC Cont. Rot. Rot. DC Corn Corn Beans Wheat Beans Corn Corn Beans Wheat Beans Corn Corn Beans Wheat Beans

    E-Print Network [OSTI]

    Jackson, Scott A.

    Cont. Rot. Rot. DC Cont. Rot. Rot. DC Cont. Rot. Rot. DC Corn Corn Beans Wheat Beans Corn Corn Beans Wheat Beans Corn Corn Beans Wheat Beans Expected yield per acre2 118 126 39 62 23 149 158 49 70 29

  18. Cont. Rot. Rot. DC Cont. Rot. Rot. DC Cont. Rot. Rot. DC Corn Corn Beans Wheat Beans Corn Corn Beans Wheat Beans Corn Corn Beans Wheat Beans

    E-Print Network [OSTI]

    Cont. Rot. Rot. DC Cont. Rot. Rot. DC Cont. Rot. Rot. DC Corn Corn Beans Wheat Beans Corn Corn Beans Wheat Beans Corn Corn Beans Wheat Beans Expected yield per acre2 119 127 39 62 23 149 159 49 70 29

  19. Compositionally-graded InGaAsInGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

    E-Print Network [OSTI]

    Compositionally-graded InGaAsInGaP alloys and GaAsSb alloys for metamorphic InP on GaAs Li Yang a of tandem graded layers of InGaAs and InGaP with compositional grading of the In concentration. This tandem

  20. New Experimental Data in DC745U

    SciTech Connect (OSTI)

    Ortiz-Acosta, Denisse [Los Alamos National Laboratory; Cady, Carl [Los Alamos National Laboratory; Densmore, Crystal [Los Alamos National Laboratory

    2012-06-18T23:59:59.000Z

    The objectives of this project are: (1) study the molecular and mechanical properties of DC745U - (a) DC745U is a silicone elastomer used in several weapons systems, (b) depending on their chemistry and formulation, polymers can be susceptible to damage and failures due to weak chemical linkages and physical interactions, (c) inefficient production processes can generate heterogeneities throughout the material that can contribute negatively to the overall performance and lifetime of the polyer, (d) aging, long-term thermal and radioactive conditions, and mechanical strains can affect the materials network structure and contribute to the degradation of the production; (2) characterization of DC745U materials cured under different conditions to determine possible differences to the polymer structure; and (3) this work is relevant to mission-critical programs and for supporting programmatic work for weapon research.

  1. 8798_FL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del(ANL-IN-03-032) -Less isNFebruaryOctober 2, AlgeriaQ1 Q2 Q3 U . S .1α,RESEARCH

  2. Thermoelectric DC conductivities from black hole horizons

    E-Print Network [OSTI]

    Aristomenis Donos; Jerome P. Gauntlett

    2014-10-14T23:59:59.000Z

    An analytic expression for the DC electrical conductivity in terms of black hole horizon data was recently obtained for a class of holographic black holes exhibiting momentum dissipation. We generalise this result to obtain analogous expressions for the DC thermoelectric and thermal conductivities. We illustrate our results using some holographic Q-lattice black holes as well as for some black holes with linear massless axions, in both $D=4$ and $D=5$ bulk spacetime dimensions, which include both spatially isotropic and anisotropic examples. We show that some recently constructed ground states of holographic Q-lattices, which can be either electrically insulating or metallic, are all thermal insulators.

  3. DOE - Office of Legacy Management -- University of Miami - FL 0-01

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling Corp -K LeDowntownUnited NuclearMiami - FL 0-01

  4. Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors

    E-Print Network [OSTI]

    Pala, Nezih

    Torr and consisted of a 1.4 lm undoped GaN buffer layer on i-SiC substrate, * Corresponding authorLow frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors N. Pala a November 2002 Abstract Low-frequency noise in AlGaN/InGaN/GaN double heterostructure field effect

  5. Design and analysis of a zero-voltage switching scheme for a dc- to-dc converter

    E-Print Network [OSTI]

    Arun, G.

    1992-01-01T23:59:59.000Z

    5S 59 VITA . 65 I. IST OF FICI;RES FIGURE Page Linear versus switch-mode power convers&on Components of a switch-mode dc-to-dc converter 3 A typical dc-to-dc converter system Basic buck converter Basic boost converter Basic buck...-boost converter 7 One leg of a, dc-to-dc converter. Turn-on and turn-off scenartos in switch-mode operation. 16 10 Switching loci in the ur ? ir plane. Circuit for. zero-voltage sw&tching. . Mode 1 17 90 Mode? Mode I Mode 5 oo 93 Typical voltage...

  6. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    E-Print Network [OSTI]

    Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

    2010-08-24T23:59:59.000Z

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  7. achyrocline satureioides dc: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and DC, microgrid, with its definition as a local grid that comprises distributed generation, energy storage systems to the frequency in the AC bulk grid, the DC voltage in the...

  8. DC Students Flex Their Mental Muscles in Regional Science Bowl...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    DC Students Flex Their Mental Muscles in Regional Science Bowl Competition DC Students Flex Their Mental Muscles in Regional Science Bowl Competition February 23, 2015 - 3:12pm...

  9. Halbach array DC motor/generator

    DOE Patents [OSTI]

    Merritt, Bernard T. (Livermore, CA); Dreifuerst, Gary R. (Livermore, CA); Post, Richard F. (Walnut Creek, CA)

    1998-01-01T23:59:59.000Z

    A new configuration of DC motor/generator is based on a Halbach array of permanent magnets. This motor does not use ferrous materials so that the only losses are winding losses and losses due to bearings and windage. An "inside-out" design is used as compared to a conventional motor/generator design. The rotating portion, i.e., the rotor, is on the outside of the machine. The stationary portion, i.e., the stator, is formed by the inside of the machine. The rotor contains an array of permanent magnets that provide a uniform field. The windings of the motor are placed in or on the stator. The stator windings are then "switched" or "commutated" to provide a DC motor/generator much the same as in a conventional DC motor. The commutation can be performed by mechanical means using brushes or by electronic means using switching circuits. The invention is useful in electric vehicles and adjustable speed DC drives.

  10. Halbach array DC motor/generator

    DOE Patents [OSTI]

    Merritt, B.T.; Dreifuerst, G.R.; Post, R.F.

    1998-01-06T23:59:59.000Z

    A new configuration of DC motor/generator is based on a Halbach array of permanent magnets. This motor does not use ferrous materials so that the only losses are winding losses and losses due to bearings and windage. An ``inside-out`` design is used as compared to a conventional motor/generator design. The rotating portion, i.e., the rotor, is on the outside of the machine. The stationary portion, i.e., the stator, is formed by the inside of the machine. The rotor contains an array of permanent magnets that provide a uniform field. The windings of the motor are placed in or on the stator. The stator windings are then ``switched`` or ``commutated`` to provide a DC motor/generator much the same as in a conventional DC motor. The commutation can be performed by mechanical means using brushes or by electronic means using switching circuits. The invention is useful in electric vehicles and adjustable speed DC drives. 17 figs.

  11. FEDERAL COMMUNICATIONS COMMISSION Washington, DC 20554

    E-Print Network [OSTI]

    Bove Jr., V. Michael

    FCC 96207 Before the FEDERAL COMMUNICATIONS COMMISSION Washington, DC 20554 In the Matter to the advancement of digital television and related technologies by the Federal Communications Commission, its 6172530334, fax 6172586264 vmb@media.mit.edu #12; EXECUTIVE SUMMARY The Federal Communications

  12. Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption In this paper, we present four GaN based polar quantum structures grown on c-plane embedded in p-i-n diode GaN/AlGaN quantum structures for operation in the deep-UV spectral region and the other three

  13. Energy Training Session for DC Elementary School Teachers

    Broader source: Energy.gov [DOE]

    Are you an elementary school teacher in Washington, DC, looking for creative ideas to introduce energy curriculum to your students?

  14. New plasma chemistries for dry etching of InGaAlP alloys: BI{sub 3} and BBr{sub 3}

    SciTech Connect (OSTI)

    Hong, J.; Cho, H.; Maeda, T.; Abernathy, C.R.; Pearton, S.J. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Shul, R.J. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Hobson, W.S. [Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)] [Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)

    1998-09-01T23:59:59.000Z

    Inductively coupled plasma etching of InGaP, AlInP and AlGaP in BI{sub 3} or BBr{sub 3} discharges was investigated as a function of source power, dc chuck bias and plasma composition. InGaP etches at the fastest rates ({gt}6000thinsp{Angstrom}thinspmin{sup {minus}1}) in both chemistries, followed by AlGaP. It is found that AlInP provides an excellent etch stop for the other two materials in both mixtures. The InGaP surface morphology improves with increasing BI{sub 3} or BBr{sub 3} content, and with increasing dc chuck bias. The etched features for this material are highly anisotropic. Etch selectivities for InGaP over SiO{sub 2} and SiN{sub x} of {ge}8 are obtained in both plasma chemistries, and there is no etch incubation time with either mixture, indicating that both can scavenge the native oxide on InGaP, AlGaP and AlInP. {copyright} {ital 1998 American Vacuum Society.}

  15. Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1

    E-Print Network [OSTI]

    Nabben, Reinhard

    Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1 , T. Stempel1/37, 01-142 Warsaw, Poland ABSTRACT Time-integrated and time-resolved photoluminescence measurements on InGaN quantum wells grown by MOCVD on two different substrates (sapphire and GaN) show that the lumines- cence

  16. Aalborg Universitet Hierarchical Control for Multiple DC Microgrids Clusters

    E-Print Network [OSTI]

    Vasquez, Juan Carlos

    Aalborg Universitet Hierarchical Control for Multiple DC Microgrids Clusters Shafiee, Qobad Control for Multiple DC Microgrids Clusters. I E E E Transactions on Energy Conversion. General rights, J. C. Vasquez, and J. M. Guerrero, "Hierarchical Control for Multiple DC-Microgrids Clusters," IEEE

  17. Transportation YOU 2013 DC Youth Summit WTS Transportation YOU

    E-Print Network [OSTI]

    Minnesota, University of

    Transportation YOU 2013 DC Youth Summit WTS Transportation YOU CTS Research Conference May 21, 2014 Lisa Rasmussen, WTS / Kimley-Horn and Associates, Inc #12;Transportation YOU 2013 DC Youth SummitTransportation YOU 2013 DC Youth Summit Agenda What is Transportation YOU? Transportation YOU ­ WTS Local Chapter

  18. D.C. Water Resources Research Center Annual Technical Report

    E-Print Network [OSTI]

    D.C. Water Resources Research Center Annual Technical Report FY 2007 D.C. Water Resources Research of the District of Columbia (DC) Water Resources Research Institute (the Institute) for the period of March 1 relevant water resources research results and transfer information to assist policy makers and residents

  19. Low Power DC-DC Converters and a Low Quiescent Power High PSRR Class-D Audio Amplifier

    E-Print Network [OSTI]

    Torres, Joselyn

    2013-12-03T23:59:59.000Z

    High-performance DC-DC voltage converters and high-efficient class-D audio amplifiers are required to extend battery life and reduce cost in portable electronics. This dissertation focuses on new system architectures and design techniques...

  20. Low Power DC-DC Converters and a Low Quiescent Power High PSRR Class-D Audio Amplifier

    E-Print Network [OSTI]

    Torres, Joselyn

    2013-12-03T23:59:59.000Z

    High-performance DC-DC voltage converters and high-efficient class-D audio amplifiers are required to extend battery life and reduce cost in portable electronics. This dissertation focuses on new system architectures and design techniques...

  1. Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers

    SciTech Connect (OSTI)

    Yang, Yujue; Wang, Junxi; Li, Jinmin; Zeng, Yiping, E-mail: ypzeng@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-06-21T23:59:59.000Z

    The effects of InGaN-based light-emitting diodes (LEDs) with Al composition increasing and decreasing GaN-AlGaN barriers along the growth direction are studied numerically. Simulation results suggest that the LEDs with GaN-AlGaN composition-decreased barriers show more significant enhancement of light-output power and internal quantum efficiency than LEDs with composition-increasing GaN-AlGaN barriers when compared with the conventional LED with GaN barriers, due to the improvement in hole injection efficiency and electron blocking capability. Moreover, the optical performance is further improved by replacing GaN-AlGaN barriers with AlGaN-GaN barriers of the same Al composition-decreasing range, which are mainly attributed to the modified band diagrams. In addition, the major causes of the different efficiency droop behaviors for all the designed structures are explained by the electron leakage current and the different increase rates of hole concentration with injection current.

  2. Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers

    E-Print Network [OSTI]

    Keogh, David Martin

    2006-01-01T23:59:59.000Z

    T. Henderson, High- Speed InGaP/GaAs HBTs Using a SimpleA typical AlGaAs/GaAs HBT or InGaP/GaAs HBT has the opposite

  3. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Mreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-07-07T23:59:59.000Z

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  4. Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta

    E-Print Network [OSTI]

    Svane, Axel Torstein

    69,71 Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta Department of Physics properties of wurtzite GaN are studied by Ga nuclear magnetic resonance NMR in a GaN bulk crystal containing GaN is a wide band-gap semiconductor which crystallizes in the hexagonal wurtzite structure

  5. Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions Y Abstract Compositionally abrupt InGaP/GaAs heterojunctions grown by gas-source molecular beam epitaxy have the InGaP layer show non-uniform In and Ga distribution. About 1.5 nm of transition region

  6. Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    del Alamo, Jess A.

    Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs Feng Gao1, USA tpalacios@mit.edu; (617) 324-2395 Keywords: AlGaN/GaN HEMTs, reliability, moisture, electro-chemical reactions Abstract The nature of structural degradation in AlGaN/GaN high electron mobility transistors

  7. Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High

    E-Print Network [OSTI]

    Li, Yat

    Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors, 2006 ABSTRACT We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire-organic chemical vapor deposition (MOCVD). Transmission electron microscopy (TEM) studies reveal that the GaN/ AlN/AlGaN

  8. New leading/trailing edge modulation strategies for two-stage AC/DC PFC adapters to reduce DC-link capacitor ripple current

    E-Print Network [OSTI]

    Sun, Jing

    2007-09-17T23:59:59.000Z

    AC/DC adapters mostly employ two-stage topology: Power Factor Correction (PFC) pre-regulation stage followed by an isolated DC/DC converter stage. Low power AC/DC adapters require a small size to be competitive. Among their components, the bulk DC...

  9. Beta decay of Ga-62

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

  10. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

    SciTech Connect (OSTI)

    Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

    2013-08-19T23:59:59.000Z

    We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

  11. DC side filters for multiterminal HVDC systems

    SciTech Connect (OSTI)

    Shore, N.L.; Adamson, K.; Bard, P. [and others] [and others

    1996-10-01T23:59:59.000Z

    Multiterminal HVDC systems present challenges in the specification and design of suitable dc side filtering. This document examines the existing experience and addresses the particular technical problems posed by multiterminal systems. The filtering requirements of small taps are discussed, as is the potential use of active filters. Aspects of calculation and design are considered and recommendations made to guide the planners and designers of future multiterminal schemes.

  12. Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes

    SciTech Connect (OSTI)

    Zhao, Jingtao; Lin, Zhaojun, E-mail: linzj@sdu.edu.cn; Luan, Chongbiao; Zhou, Yang; Yang, Ming [School of Physics, Shandong University, Jinan 250100 (China); Lv, Yuanjie; Feng, Zhihong [National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051 (China)

    2014-08-25T23:59:59.000Z

    In this study, we investigated the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with Ti/Al/Ni/Au gate electrodes using the measured capacitance-voltage, current-voltage characteristics, and micro-Raman spectroscopy. We found that the uneven distribution of the strain caused by the Schottky metals was a major factor that generates the polarization Coulomb field scattering in AlGaN/AlN/GaN HFETs, and after appropriate rapid thermal annealing (RTA) processes, the polarization Coulomb field scattering was greatly weakened and the two-dimensional electron gas electron mobility was improved. We also found that the Schottky barrier height and the DC characteristics of the devices became better after appropriate RTA. Of course, the electrical performances mentioned above became deteriorated after excessive annealing.

  13. Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN

    SciTech Connect (OSTI)

    Pearton, S.J.; Vartuli, C.B.; Lee, J.W.; Donovan, S.M.; MacKenzie, J.D.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States); Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States); McLane, G.F. [Army Research Lab., Fort Monmouth, NJ (United States); Ren, F. [AT and T Bell Labs., Murray Hill, NJ (United States)

    1996-04-01T23:59:59.000Z

    Etch rates up to 7,000 {angstrom}/min. for GaN are obtained in Cl{sub 2}/H{sub 2}/Ar or BCl{sub 3}/Ar ECR discharges at 1--3mTorr and moderate dc biases. Typical rates with HI/H{sub 2} are about a factor of three lower under the same conditions, while CH{sub 4}/H{sub 2} produces maximum rates of only {approximately}2,000 {angstrom}/min. The role of additives such as SF{sub 6}, N{sub 2}, H{sub 2} or Ar to the basic chlorine, bromine, iodine or methane-hydrogen plasma chemistries are discussed. Their effect can be either chemical (in forming volatile products with N) or physical (in breaking bonds or enhancing desorption of the etch products). The nitrides differ from conventional III-V`s in that bond-breaking to allow formation of the etch products is a critical factor. Threshold ion energies for the onset of etching of GaN, InGaN and InAlN are {ge} 75 eV.

  14. By Joseph M. Gambogi Titanium (Ti) is a lightweight metal well Springs, FL; E. I. du Pont de Nemours & Co.

    E-Print Network [OSTI]

    1 TITANIUM By Joseph M. Gambogi Titanium (Ti) is a lightweight metal well Springs, FL; E. I. du mineral strength-to-weight ratio. Titanium comprises sands deposits; and P. W. Gillibrand Co., Simi about, rutile, and producer of natural rutile. Kerr-McGee sphene. Although titanium is best known for its

  15. A High Power Density DC-DC Converter for Distributed PV Architectures

    SciTech Connect (OSTI)

    Mohammed S. Agamy; Song Chi; Ahmed Elasser; Maja Harfman-Todorovic; Yan Jiang; Frank Mueller; Fengfeng Tao

    2012-06-01T23:59:59.000Z

    In order to maximize solar energy harvesting capabilities, power converters have to be designed for high efficiency and good MPPT and voltage/current performance. When many converters are used in distributed systems, power density also becomes an important factor as it allows for simpler system integration. In this paper a high power density string dc-dc converter suitable for distributed medium to large scale PV installation is presented. A simple partial power processing topology, implemented with all silicon carbide devices provides high efficiency as well as high power density. A 3.5kW, 100kHz converter is designed and tested to verify the proposed methods.

  16. DC-DC Converter Topology Assessment for Large Scale Distributed Photovoltaic Plant Architectures

    SciTech Connect (OSTI)

    Mohammed S. Agamy; Maja Harfman-Todorovic; Ahmed Elasser; Juan A. Sabate; Robert L. Steigerwald; Yan Jiang; Somasundaram Essakiappan

    2011-07-01T23:59:59.000Z

    Distributed photovoltaic (PV) plant architectures are emerging as a replacement for the classical central inverter based systems. However, power converters of smaller ratings may have a negative impact on system efficiency, reliability and cost. Therefore, it is necessary to design converters with very high efficiency and simpler topologies in order not to offset the benefits gained by using distributed PV systems. In this paper an evaluation of the selection criteria for dc-dc converters for distributed PV systems is performed; this evaluation includes efficiency, simplicity of design, reliability and cost. Based on this evaluation, recommendations can be made as to which class of converters is best fit for this application.

  17. Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system

    E-Print Network [OSTI]

    Coldren, Larry A.

    Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system Erik J InGaAs/InGaAsP/InGaP material system. 2005 American Institute of Physics. DOI: 10 of achieving QWI in such active regions.3,4 However, InGaAs/InGaAsP/InGaP-based de- vices offer numerous

  18. DC Breakdown Experiments with Iridium Cathode

    E-Print Network [OSTI]

    Profatilova, Iaroslava; Korsback, Anders; Muranaka, Tomoko; Wuensch, Walter

    2015-01-01T23:59:59.000Z

    Electrical breakdown occurring in rf accelerating structures is one of the major disruptions of the accelerated beam in CLIC. At CERN, as complements to rf facilities, DC-spark systems have been used to study breakdown properties of many candidate materials for making rf components. In this note, measurements of conditioning speed, breakdown field and field enhancement factor of iridium are presented comparing with previously tested materials. The average breakdown field after conditioning reached 238 MV/m, which places iridium next to copper. By comparison with results and properties of other metals, the low breakdown field of iridium could be explained by its face-centred-cubic crystal structure.

  19. DC Survey 2013 | National Nuclear Security Administration

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisitingContract Management Fermi Site OfficeCoursePublicCurrentCurtis110 1 ofDC

  20. User:Dc | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-fTri Global Energy LLCEnergy) RedirectCwebber Jump to: navigation,DbowersDc

  1. Dc's blog | OpenEI Community

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOE Facility Database DataDatatechnicNew Jersey: Energy ResourcesDc's blog Home

  2. Washington DC | OpenEI Community

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlin BaxinUmweltVillageGraph HomeWarana Group of CooperativesDC Home

  3. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23T23:59:59.000Z

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  4. XL-DC/Mark V Options You can customize the XL-DC and Mark V

    E-Print Network [OSTI]

    Berns, Hans-Gerd

    administrator with the NTP Time Server Protocol, network status, and statistics. This feature implements SNMP. XL-DC Mark V Network Time Server Telecommunications Interface Frequency Measurement STD Time Interface Low Phase Noise Output Network Interface Loss of Lock Alarm STD Programmable Pulse Output

  5. A Reachability-Based Method for Large-Signal Behavior Verification of DC-DC Converters

    E-Print Network [OSTI]

    Liberzon, Daniel

    -loop, large-signal system behavior verification, and iv) switching detail modeling. In open-loop, largeinguez-Garcia, Member, IEEE Abstract--A method for large-signal behavior verification of power electronics DC behavior verification, lengthy time-domain simula- tions are conducted to analyze the system response

  6. Development of a 55 kW 3X DC-DC Converter for HEV Systems

    E-Print Network [OSTI]

    Tolbert, Leon M.

    converter and a traction motor to drive the vehicle. In most commercial HEV systems, the power converter one of the hottest parts in the system. Hence, with the trend of higher coolant temperatures, those-dc converter and the continuous control of the modulation index of the inverter, it is sufficient to operate

  7. Energy Challenge Two: The WeatherizeDC Campaign | Department...

    Broader source: Energy.gov (indexed) [DOE]

    economic and environmental justice by creating clean energy career opportunities for people who need them most. The DC Project applies cutting-edge organizing tools and tactics...

  8. assisted dc magnetron: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    resistivity exceeding 1020 .cm 2. However, native defects (most Mekki, Abdelkarim 23 Optimization of DC reactive magnetron sputtering deposition process for efficient YSZ...

  9. DC Bus Capacitor Manufacturing Facility for Electric Drive Vehicles...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    0 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C. apearravt028boan2010...

  10. average current dc: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ??Permanent magnet Brushless DC motor drives are being employed in newlinemany variable speed applications due to their high efficiency, silent operation, newlinecompact size,...

  11. ac to dc converters: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to use solid state Inverters(DC to AC converters) to have a variable voltage, fixed or variable frequency power source available for industrial applications. With advancements...

  12. PHOTOVOLTAIC DC ARC FAULT DETECTOR TESTING AT SANDIA NATIONAL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    PHOTOVOLTAIC DC ARC FAULT DETECTOR TESTING AT SANDIA NATIONAL LABORATORIES Jay Johnson 1 , Birger Pahl 2 , Charles Luebke 2 , Tom Pier 2 , Theodore Miller 3 , Jason Strauch 1 ,...

  13. Identifying semiconductors by d.c. ionization conductivity

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    expected from high-Z semiconductor detectors? , IEEE Transand binary compound semiconductors and insulators, J PhysIdentifying Semiconductors by D.C. Ionization Conductivity

  14. DC Resistivity Survey (Wenner Array) At Mt Princeton Hot Springs...

    Open Energy Info (EERE)

    2008 - 2010 Usefulness useful DOE-funding Unknown Exploration Basis Determination of groundwater flux patterns Notes Researchers measured DC resistivity and produced 12 resistivity...

  15. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01T23:59:59.000Z

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  16. Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

    SciTech Connect (OSTI)

    Deen, David A., E-mail: david.deen@alumni.nd.edu; Storm, David F.; Meyer, David J.; Bass, Robert; Binari, Steven C. [Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375-5347 (United States); Gougousi, Theodosia [Physics Department, University of Maryland Baltimore County, Baltimore, Maryland 21250 (United States); Evans, Keith R. [Kyma Technologies, Raleigh, North Carolina 27617 (United States)

    2014-09-01T23:59:59.000Z

    A series of six ultrathin AlN/GaN heterostructures with varied AlN thicknesses from 1.56?nm have been grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. High electron mobility transistors (HEMTs) were fabricated from the set in order to assess the impact of barrier thickness and homo-epitaxial growth on transistor performance. Room temperature Hall characteristics revealed mobility of 1700?cm{sup 2}/V s and sheet resistance of 130 ?/? for a 3?nm thick barrier, ranking amongst the lowest room-temperature sheet resistance values reported for a polarization-doped single heterostructure in the III-Nitride family. DC and small signal HEMT electrical characteristics from submicron gate length HEMTs further elucidated the effect of the AlN barrier thickness on device performance.

  17. AlGaAs/InGaAs/AlGaAs Double Barrier

    E-Print Network [OSTI]

    Perera, A. G. Unil

    -state Er. Tunneling Quantum Dot Sensors for Multi-band Infrared and Terahertz Radiation Detection G radiation detection are demonstrated. In T-QDIP structures, photoabsorption takes place in InGaAs QDs (due

  18. Polarity inversion of N-face GaN by plasma-assisted molecular beam epitaxy

    SciTech Connect (OSTI)

    Wong, M.H.; Mishra, Umesh K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Wu Feng; Mates, Thomas E.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2008-11-01T23:59:59.000Z

    The polarity of GaN grown by plasma-assisted molecular beam epitaxy was inverted from N-face to Ga-face by simultaneously exposing the surface to Mg and activated N fluxes during a growth interruption at a reduced substrate temperature. Growth studies suggested that a Mg{sub x}N{sub y} compound was responsible for inverting the crystal. The change in polarity was verified in situ by reflection high energy electron diffraction via GaN surface reconstructions, and ex situ by convergent beam electron diffraction and KOH etch studies. The surface of the inverted material showed smooth step flow features. Ga-face high electron mobility transistors with good dc and small signal performance were fabricated on the inverted epilayers. A drain-source current of 0.84 A/mm was measured at a gate-source voltage of +1 V. Current-gain cutoff and maximum oscillation frequencies of 22 and 53 GHz, respectively, were measured in these devices. The device performance is similar to that of Ga-face transistors with comparable dimensions.

  19. Design and analysis of a zero-voltage switching scheme for a dc- to-dc converter

    E-Print Network [OSTI]

    Arun, G.

    1992-01-01T23:59:59.000Z

    DESIGN AND ANALYSIS OF A ZERO-VOLTAGE SSVITCHING SCFIE'. tIE FOR A DC-TO-DC CONVERTER A Thesis by G. ARUN Submitted to the Office of Graduate Studies of Texas ARM 1. niversity in partial fulfillment of the requirements for the degree... of MASTER OF SCIENCE December 1992 Major Subject: Electrical Engineering DESIGN AND ANALYSIS OE A ZERO-VOLTAGE SWITCHING SCHEME I'OR A DC-TO-DC CONVERTER A Thesis by G. AR(tN Approved as to style and content by: P. Enjeti (Chair of Cornrnitteel C...

  20. Comparison of Chloroflexus aurantiacus strain J-10-fl proteomes of cells grown chemoheterotrophically and photoheterotrophically

    SciTech Connect (OSTI)

    Cao, Li; Bryant, Donald A.; Schepmoes, Athena A.; Vogl, Kajetan; Smith, Richard D.; Lipton, Mary S.; Callister, Stephen J.

    2012-01-17T23:59:59.000Z

    Chloroflexus aurantiacus J-10-fl is a thermophilic green bacterium, a filamentous anoxygenic phototroph, and the model organism of the phylum Chloroflexi. We applied high-throughput, liquid chromatography-mass spectrometry in a global quantitative proteomics investigation of C. aurantiacus cells grown under oxic (chemoorganoheterotrophically) and anoxic (photoorganoheterotrophically) redox states. Our global analysis identified 13,524 high-confidence peptides that matched to 1,286 annotated proteins, 242 of which were either uniquely identified or significantly increased in abundance under anoxic culture conditions. Fifty-three of the 242 proteins are previously characterized photosynthesis-related proteins, including chlorosome proteins, proteins involved in the bacteriochlorophyll biosynthesis, 3-hydroxypropionate (3-OHP) CO2 fixation pathway, and components of electron transport chains. The remaining 190 proteins have not previously been reported. Of these, five proteins were found to be encoded by genes from a novel operon and observed only in photoheterotrophically grown cells. These proteins candidates may prove useful in further deciphering the phototrophic physiology of C. aurantiacus and other filamentous anoxygenic phototrophs.

  1. Composition and Interface Analysis of InGaN/GaN Multiquantum...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells...

  2. Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors

    SciTech Connect (OSTI)

    Ghosh, Saptarsi, E-mail: saptarsi123@gmail.com; Dinara, Syed Mukulika; Mukhopadhyay, Partha; Jana, Sanjay K.; Bag, Ankush; Kabi, Sanjib [Advanced Technology Development Centre, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India); Chakraborty, Apurba [Department of E and E C E, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India); Chang, Edward Yi [Department of Material Science and Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan (China); Biswas, Dhrubes [Advanced Technology Development Centre, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India); Department of E and E C E, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)

    2014-08-18T23:59:59.000Z

    Current transient analysis combined with response to pulsed bias drives have been used to explore the possibilities of threading dislocations affecting the current dispersion characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs). A growth strategy is developed to modulate the dislocation density among the heterostructures grown on silicon by plasma-assisted molecular-beam epitaxy. Slow pulsed I-V measurements show severe compressions and appear to be significantly dependent on the threading dislocation density. By analyzing the corresponding slow detrapping process, a deep-level trap with emission time constant in the order of seconds was identified as the cause. Among the specimens, both in the epilayers and at the surface, the number of dislocations was found to have a notable influence on the spatial distribution of deep-level trap density. The observations confirm that the commonly observed degraded frequency performance among AlGaN/GaN HFETs in the form of DC-radio frequency dispersions can at least partly be correlated with threading dislocation density.

  3. SoC Energy Savings = Reduce+Reuse+Recycle: A Case Study Using a 660MHz DC-DC Converter with Integrated Output Filter

    E-Print Network [OSTI]

    Lemieux, Guy

    SoC Energy Savings = Reduce+Reuse+Recycle: A Case Study Using a 660MHz DC-DC Converter, mehdia, samad, prp, shahriar } @ ece.ubc.ca Abstract This paper advocates `reduce, reuse, recycle to emphasize reuse and recycling as well. We design a DC-DC buck converter to demonstrate the 3 techniques

  4. FSU Health Compliance Record fax to 8506448958 or mail to 960 Learning Way, Tallahassee, FL 323064178 Part A--Print or type. Illegible forms will not be processed.

    E-Print Network [OSTI]

    Weston, Ken

    323064178 Part A--Print or type. Illegible forms will not be processed. STUDENT NAME, Tallahassee, FL 323064178 Part A--Print or type. Illegible forms will not be processed. STUDENT

  5. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

    2010-10-14T23:59:59.000Z

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  6. Dynamic microscopic theory of fusion using DC-TDHF

    SciTech Connect (OSTI)

    Umar, A. S.; Oberacker, V. E.; Keser, R.; Maruhn, J. A.; Reinhard, P.-G. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); RTE University, Science and Arts Faculty, Department of Physics, 53100, Rize (Turkey); Institut fuer Theoretische Physik, Goethe-Universitaet, D-60438 Frankfurt am Main (Germany); Institut fur Theoretische Physik, Universitat Erlangen, D-91054 Erlangen (Germany)

    2012-10-20T23:59:59.000Z

    The density-constrained time-dependent Hartree-Fock (DC-TDHF) theory is a fully microscopic approach for calculating heavy-ion interaction potentials and fusion cross sections below and above the fusion barrier. We discuss recent applications of DC-TDHF method to fusion of light and heavy systems.

  7. ELECTROMAGNETIC RADIATION FROM A STRONG DC ELECTRIC FIELD

    E-Print Network [OSTI]

    Guedel, Manuel

    ELECTROMAGNETIC RADIATION FROM A STRONG DC ELECTRIC FIELD Manuel Gudel 1 and Donat G. Wentzel 2 1 accelerated by a strong dc electric field show not only very efficient generation of beam waves but also emission of omode radiation. We present a set of particle simulations for which we study the behavior

  8. Read-out electronics for DC squid magnetic measurements

    DOE Patents [OSTI]

    Ganther, Jr., Kenneth R. (Olathe, KS); Snapp, Lowell D. (Independence, MO)

    2002-01-01T23:59:59.000Z

    Read-out electronics for DC SQUID sensor systems, the read-out electronics incorporating low Johnson noise radio-frequency flux-locked loop circuitry and digital signal processing algorithms in order to improve upon the prior art by a factor of at least ten, thereby alleviating problems caused by magnetic interference when operating DC SQUID sensor systems in magnetically unshielded environments.

  9. National Small Business Federal Contracting Summit-DC Fall Conference

    Broader source: Energy.gov [DOE]

    The 2014 National Small Business Federal Contracting Summit - DC Fall Conference is presented jointly by the National Association of Small Business Contractors (the Supplier Council of The American Small Business Chamber of Commerce) and the U.S. Women's Chamber of Commerce in Washington DC.

  10. PRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS

    E-Print Network [OSTI]

    McCluskey, Matthew

    -m thick GaN layer deposited on a sapphire substrate, and it is capped by a 0.2-m GaN:Mg pPRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS W. Shan,* J.W. Ager pressure on optical transitions in InGaN/GaN multiple quantum wells (MQWs) has been studied

  11. Free carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1

    E-Print Network [OSTI]

    As, Donat Josef

    ) substrate,7 with GaN and AlGaN layer thickness of 600 nm and 30 nm, respectively. The layer thicknessFree carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1 T. Li,1 J. Y. Huang,1 F. A (Received 24 February 2012; accepted 19 March 2012; published online 3 April 2012) Cubic Al0.3Ga0.7N/GaN

  12. Historical Material Analysis of DC745U Pressure Pads

    SciTech Connect (OSTI)

    Ortiz-Acosta, Denisse [Los Alamos National Laboratory

    2012-07-30T23:59:59.000Z

    As part of the Enhance Surveillance mission, it is the goal to provide suitable lifetime assessment of stockpile materials. This report is an accumulation of historical publication on the DC745U material and their findings. It is the intention that the B61 LEP program uses this collection of data to further develop their understanding and potential areas of study. DC745U is a commercially available silicone elastomer consisting of dimethyl, methyl-phenyl, and methyl-vinyl siloxane repeat units. Originally, this material was manufactured by Dow Corning as Silastic{reg_sign} DC745U at their manufacturing facility in Kendallville, IN. Recently, Dow Corning shifted this material to the Xiameter{reg_sign} brand product line. Currently, DC745U is available through Xiameter{reg_sign} or Dow Corning's distributor R. D. Abbott Company. DC745U is cured using 0.5 wt% vinyl-specific peroxide curing agent known as Luperox 101 or Varox DBPH-50. This silicone elastomer is used in numerous parts, including two major components (outer pressure pads and aft cap support) in the W80 and as pressure pads on the B61. DC745U is a proprietary formulation, thus Dow Corning provides limited information on its composition and properties. Based on past experience with Dow Corning, DC745U is at risk of formulation changes without notification to the costumer. A formulation change for DC745U may have a significant impact because the network structure is a key variable in determining material properties. The purpose of this report is to provide an overview of historical DC745U studies and identify gaps that need to be addressed in future work. Some of the previous studies include the following: 1. Spectroscopic characterization of raw gum stock. 2. Spectroscopic, thermal, and mechanical studies on cured DC745U. 3. Nuclear Magnetic Resonance (NMR) and solvent swelling studies on DC745U with different crosslink densities. 4. NMR, solvent swelling, thermal, and mechanical studies on thermally aged DC745U. 5. NMR, solvent swelling, thermal, and mechanical studies on radiolytically aged DC745U. Each area is reviewed and further work is suggested to improve our understanding of DC745U for systems engineering, surveillance, aging assessments, and lifetime assessment.

  13. InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker

    E-Print Network [OSTI]

    Woodall, Jerry M.

    InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular; accepted 17 November 1995 The growth and device characterization of an InGaP/GaAs double-quality phosphorus-containing compounds.14 The growth of high-performance InGaP/ GaAs and InGaAs/InP single

  14. DC, AC and advanced EV propulsion systems

    SciTech Connect (OSTI)

    O'Neil, W.

    1983-08-01T23:59:59.000Z

    Battery development and liquid fuel availability and cost are still the pacing factors in wide scale electric vehicle introduction. Propulsion systems also require technical development, however, if electric vehicles are to be acceptable in the marketplace in competition against ICE vehicles. Eaton Corporation has undertaken a program designed to identify and investigate three broad types of propulsion systems in identical test vehicles on the same test track under conditions as similar as possible. Characteristics of dc, ac and advanced systems are compared to date, and projections of anticipated results and further work are provided. The compelling advantages of multiple mechanical ratios in EV propulsion systems are reviewed. An emerging, but less obvious, advantage is higher overall system efficiency.

  15. InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P. C. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Baca, A. G. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Li, N. Y. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Xie, X. M. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Hou, H. Q. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Armour, E. [Emcore Corporation, Somerset, New Jersey 08873 (United States)] [Emcore Corporation, Somerset, New Jersey 08873 (United States)

    2000-04-17T23:59:59.000Z

    We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the breakdown voltage (BV{sub CEO}) is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with {delta} doping is inserted at the base-collector junction. The improved device has a peak current gain of seven with ideal current-voltage characteristics. (c) 2000 American Institute of Physics.

  16. InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-10T23:59:59.000Z

    The authors have demonstrated a functional NpN double heterojunction bipolar transistor (DHBT) using InGaAsN for base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs HBT. The lower V{sub ON} is attributed to the smaller bandgap (E{sub g}=1.20eV) of MOCVD grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the BV{sub CEO} is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs Hbts of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger {triangle}E{sub C} between InGaAsN and GaAs, a graded InGaAs layer with {delta}-doping is inserted at the base-collector junction. The improved device has a peak current gain of 7 with ideal IV characteristics.

  17. Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction

    E-Print Network [OSTI]

    Sirenko, Andrei

    Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied for x-ray diffraction and reciprocal space mapping of InGaN/GaN multiple-quantum-well MQW structures grown on the sidewalls of 10- m-wide triangular GaN ridges with 1-1.1 facets. Samples were produced

  18. GaN0.011P0.989GaP Double-Heterostructure Red Light-Emitting Diodes Directly Grown on GaP Substrates

    E-Print Network [OSTI]

    Tu, Charles W

    2000-01-01T23:59:59.000Z

    and C. W. Tu, GaN diodes on GaP substrates, 2000. [7] J. W.on a GaN directly grown on a GaP substrate was successfullyDH) directly a GaN grown on a (100) GaP substrate. Fig. 1(a)

  19. Abstract --A systematic framework for reliability assessment and fault-tolerant design of multiphase dc-dc

    E-Print Network [OSTI]

    Liberzon, Daniel

    reliability. Index Terms--Markov reliability modeling, maximum power point tracking, photovoltaics, switch1 Abstract -- A systematic framework for reliability assessment and fault-tolerant design of multiphase dc-dc converters deployed in photovoltaic applications is presented. System-level steady

  20. 3X DC-DC Multiplier/Divider for HEV Systems Wei Qian, Fang Z. Peng, Miaosen Shen

    E-Print Network [OSTI]

    Tolbert, Leon M.

    -dc converter, this converter can have three output/input voltage ratios with smooth transition. The control motor to drive the vehicle. The power converter could be just a traditional inverter or a dc, the inductor is bulky, heavy, costly, and always one of the hottest components. With the trend of higher

  1. Annual Meeting of Energy Recovery Council, W hi DC D b 3 2011Washington DC, December 3. 2011

    E-Print Network [OSTI]

    Columbia University

    Annual Meeting of Energy Recovery Council, W hi DC D b 3 2011Washington DC, December 3. 2011 to the recyclers (e.g. metal smelters; secondary paper mills).(e.g. metal smelters; secondary paper mills). All, recovery (called WastetoEnergy; WTE) gy, , y ( gy; ) · All countries (and communities) who rely on WTE also

  2. Development of a Novel Bi-Directional Isolated Multiple-Input DC-DC Converter

    SciTech Connect (OSTI)

    Li, H.

    2005-10-24T23:59:59.000Z

    There is vital need for a compact, lightweight, and efficient energy-storage system that is both affordable and has an acceptable cycle life for the large-scale production of electric vehicles (EVs) and hybrid electric vehicles (HEVs). Most of the current research employs a battery-storage unit (BU) combined with a fuel cell (FC) stack in order to achieve the operating voltage-current point of maximum efficiency for the FC system. A system block diagram is shown in Fig.1.1. In such a conventional arrangement, the battery is sized to deliver the difference between the energy required by the traction drive and the energy supplied by the FC system. Energy requirements can increase depending on the drive cycle over which the vehicle is expected to operate. Peak-power transients result in an increase of losses and elevated temperatures which result in a decrease in the lifetime of the battery. This research will propose a novel two-input direct current (dc) dc to dc converter to interface an additional energy-storage element, an ultracapacitor (UC), which is shown in Fig.1.2. It will assist the battery during transients to reduce the peak-power requirements of the battery.

  3. AlGaAs/InGaAsN/GaAs PnP double heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Sharps, P.R.; Hou, H.Q.; Laroche, J.R.; Ren, F.

    2000-01-11T23:59:59.000Z

    The authors have demonstrated a functional MOCVD-grown AlGaAs/InGaAsN/GaAsPnP DHBT that is lattice matched to GaAs and has a peak current gain ({beta}) of 25. Because of the smaller bandgap (E{sub g}=1.20eV)of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. The BV{sub CEO} is 12 V, consistent with its GaAs collector thickness and doping level.

  4. Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Mazumder, B.; Hurni, C. A.; Zhang, J. Y.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, M. H.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2012-08-27T23:59:59.000Z

    In this letter, we report on the interfacial abruptness of GaN/AlN/GaN heterostructures with pulsed laser atom probe tomography (APT). The samples were grown by plasma-assisted molecular beam epitaxy (MBE) under both metal-rich and N-rich conditions on both Ga-polar (0001) GaN templates and N-polar (0001) GaN substrates. An NH{sub 3} assisted MBE technique was involved to grow similar Ga-polar and N-polar structures on GaN:Fe substrates and GaN/Al{sub 2}O{sub 3} templates, respectively, for a comparison study. We find in all cases the interface with net positive polarization charge was chemically abrupt, whereas the interface with net negative polarization charge was diffuse. We discuss the implications on device design and performance. These data validate the efficiency of APT in studying interfaces for better performance in devices.

  5. Superior radiation-resistant properties of InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Yamaguchi, M.; Okuda, T.; Taylor, S.J.; Takamoto, T. [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan)] [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan); Ikeda, E.; Kurita, H. [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)

    1997-03-01T23:59:59.000Z

    The observation of minority-carrier injection-enhanced annealing of radiation damage to InGa{sub 0.5}P{sub 0.5}/GaAs tandem solar cells is reported. Radiation resistance of InGaP/GaAs tandem solar cells as is similar with GaAs-on-Ge cells have been confirmed with 1 MeV electron irradiations. Moreover, minority-carrier injection under light illumination and forward bias conditions is shown to enhance defect annealing in InGaP and to result in the recovery of InGaP/GaAs tandem solar cell properties. These results suggest that the InGaP/GaAs(/Ge) multijunction solar cells and InGaP-based devices have great potential for space applications. {copyright} {ital 1997 American Institute of Physics.}

  6. This document is the preprint version of the paper: L. Meng, T. Dragicevic, J.M. Guerrero, and J.C. Vasquez, "Stability constrained efficiency optimization for droop controlled dc-dc conversion

    E-Print Network [OSTI]

    Vasquez, Juan Carlos

    .C. Vasquez, "Stability constrained efficiency optimization for droop controlled dc-dc conversion system, Austria, Nov 2013. Stability Constrained Efficiency Optimization for Droop Controlled DC-DC Conversion a hierarchical control in a droop-controlled dc-dc conversion system with special focus on improving system

  7. Beta decay of Ga-62

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...

  8. Implementing the DC Mode in Cosmological Simulations with Supercomoving Variables

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gnedin, Nickolay Y.; Kravtsov, Andrey V.; Rudd, Douglas H.

    2011-06-02T23:59:59.000Z

    As emphasized by previous studies, proper treatment of the density fluctuation on the fundamental scale of a cosmological simulation volume - the 'DC mode' - is critical for accurate modeling of spatial correlations on scales ~> 10% of simulation box size. We provide further illustration of the effects of the DC mode on the abundance of halos in small boxes and show that it is straightforward to incorporate this mode in cosmological codes that use the 'supercomoving' variables. The equations governing evolution of dark matter and baryons recast with these variables are particularly simple and include the expansion factor, and hence the effect of the DC mode, explicitly only in the Poisson equation.

  9. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    Logo GaN nanowires show more 3D piezoelectricity than bulk GaN admin / January 11, 2012 individual gallium nitride (GaN) nanowires showing strong piezoelectric effect in 3D. This is in spite of the fact that each nanowire only measures 100nm in diameter. While GaN is ubiquitous in optoelectronic

  10. Self-aligned AlGaN/GaN transistors for sub-mm wave applications

    E-Print Network [OSTI]

    Saadat, Omair I

    2010-01-01T23:59:59.000Z

    This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

  11. Invited Paper GaN HEMT reliability

    E-Print Network [OSTI]

    del Alamo, Jess A.

    Invited Paper GaN HEMT reliability J.A. del Alamo *, J. Joh Microsystems Technology Laboratories mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier

  12. SPEAR3 LARGE DC MAGNET POWER SUPPLIES

    SciTech Connect (OSTI)

    de Lira, A

    2004-06-23T23:59:59.000Z

    The Stanford Synchrotron Radiation Laboratory (SSRL) has successfully commissioned SPEAR3, its newly upgraded 3-GeV synchrotron light source. First stored beam occurred December 15, 2003 and 100mA operation was reached on January 20, 2004. This paper describes the specification, design, and performance of the SPEAR3 DC magnet large power supplies (LGPS) that consist of tightly-regulated (better than {+-}10 ppm) current sources ranging from 100A to 225A and output powers ranging from 70kW to 135kW. A total of 6 LGPS are in successful operation and are used to power strings of quadrupoles and sextupoles. The LGPS are isolated by a delta/delta-wye 60Hz step-down transformer that provides power to 2 series-connected chopper stages operating phase-shifted at a switching frequency of 18-kHz to provide for fast output response and high efficiency. Also described are outside procurement aspects, installation, in-house testing, and operation of the power supplies.

  13. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01T23:59:59.000Z

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  14. InAs=InGaP=GaAs heterojunction power Schottky rectifiers

    E-Print Network [OSTI]

    Woodall, Jerry M.

    InAs=InGaP=GaAs heterojunction power Schottky rectifiers A. Chen, M. Young and J.M. Woodall A low-matched InGaP on GaAs, to make a high-temperature power rectifier. The LT molecular beam epitaxy technique enables the formation of an abrupt interface between InAs and InGaP. This heterojunction rectifier

  15. Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs Rajkumar Santhakumar, Yi have been designed and fabricated using AlGaN/GaN HEMTs. One of them uses a standard HEMT for the unit-gate distributed amplifier achieves a CW peak output power of 1W and a PAE of about 16% at 4GHz. Index Terms -- GaN

  16. Role of strain in polarization switching in semipolar InGaN/GaN quantum wells

    E-Print Network [OSTI]

    Role of strain in polarization switching in semipolar InGaN/GaN quantum wells Qimin Yan,1,a Patrick November 2010 The effect of strain on the valence-band structure of 112¯2 semipolar InGaN grown on GaN D6 is calculated for GaN and InN using density functional theory with the Heyd­Scuseria­ Ernzerhof

  17. GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges

    E-Print Network [OSTI]

    Perera, A. G. Unil

    GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges G. Ariyawansa, M October 2006 A GaN/AlGaN heterojunction interfacial work function internal photoemission infrared detector, the work demonstrates 54 m 5.5 THz operation of the detector based on 1s2p transition of Si donors in GaN

  18. Radiofrequency amplifier based on a dc superconducting quantum interference device

    DOE Patents [OSTI]

    Hilbert, Claude (Berkeley, CA); Martinis, John M. (Berkeley, CA); Clarke, John (Berkeley, CA)

    1986-01-01T23:59:59.000Z

    A low noise radiofrequency amplifier (10), using a dc SQUID (superconducting quantum interference device) as the input amplifying element. The dc SQUID (11) and an input coil (12) are maintained at superconductivity temperatures in a superconducting shield (13), with the input coil (12) inductively coupled to the superconducting ring (17) of the dc SQUID (11). A radiofrequency signal from outside the shield (13) is applied to the input coil (12), and an amplified radiofrequency signal is developed across the dc SQUID ring (17) and transmitted to exteriorly of the shield (13). A power gain of 19.5.+-.0.5 dB has been achieved with a noise temperature of 1.0.+-.0.4 K. at a frequency of 100 MHz.

  19. Radiofrequency amplifier based on a dc superconducting quantum interference device

    DOE Patents [OSTI]

    Hilbert, C.; Martinis, J.M.; Clarke, J.

    1984-04-27T23:59:59.000Z

    A low noise radiofrequency amplifer, using a dc SQUID (superconducting quantum interference device) as the input amplifying element. The dc SQUID and an input coil are maintained at superconductivity temperatures in a superconducting shield, with the input coil inductively coupled to the superconducting ring of the dc SQUID. A radiofrequency signal from outside the shield is applied to the input coil, and an amplified radiofrequency signal is developed across the dc SQUID ring and transmitted to exteriorly of the shield. A power gain of 19.5 +- 0.5 dB has been achieved with a noise temperature of 1.0 +- 0.4 K at a frequency of 100 MHz.

  20. Mitigation of geomagnetically induced and dc stray currents. Final report

    SciTech Connect (OSTI)

    Kappenman, J.G.

    1983-12-01T23:59:59.000Z

    This report primarily describes several approaches to mitigate the effects of Geomagnetic Induced Currents (GIC) and dc stray currents in power systems; the engineering and design considerations for a neutral capacitor blocking device; and development and testing of a prototype device of this type. Modeling of the power system for computation of GIC are described. Results from three field tests, for documenting the effects of GIC by injecting direct current (dc) into the neutrals of the transformers, are presented. Several mitigation concepts are discussed and evaluated. The concept of blocking GIC and dc stray currents by a neutral capacitor is addressed in detail. The development and testing of the prototype blocking device is described. The technical requirements and specifications for the application of these devices are also included. A perspective on the economics of GIC mitigation is included. The effect of GIC and dc stray currents on HVdc converter operation, supported by computer simulations, is also discussed.

  1. Thermoelectric DC conductivities with momentum dissipation from higher derivative gravity

    E-Print Network [OSTI]

    Long Cheng; Xian-Hui Ge; Zu-Yao Sun

    2015-04-28T23:59:59.000Z

    We present a mechanism of momentum relaxation in higher derivative gravity by adding linear scalar fields to the Gauss-Bonnet theory. We analytically computed all of the DC thermoelectric conductivities in this theory by adopting the method given by Donos and Gauntlett in [arXiv:1406.4742]. The results show that the DC electric conductivity is not a monotonic function of the effective impurity parameter $\\beta$: in the small $\\beta$ limit, the DC conductivity is dominated by the coherent phase, while for larger $\\beta$, pair creation contribution to the conductivity becomes dominant, signaling an incoherent phase. In addition, the DC heat conductivity is found independent of the Gauss-Bonnet coupling constant.

  2. National Science Bowl Brings Best and Brightest to DC

    Broader source: Energy.gov [DOE]

    The National Science Bowl Finals in Washington D.C. April 27 to 30 pit 113 high and middle school teams against one another answering questions Jeopardy-style about biology, chemistry, earth science, physics, astronomy, and math.

  3. Reactive DC magnetron sputtering of ultrathin superconducting niobium nitride films

    E-Print Network [OSTI]

    Dane, Andrew E. (Andrew Edward)

    2015-01-01T23:59:59.000Z

    DC reactive magnetron sputtering was used to deposit few-nanometer-thick films of niobium nitride for fabrication of superconducting devices. Over 1000 samples were deposited on a variety of substrates, under various chamber ...

  4. Low Cost, High Temperature, High Ripple Current DC Bus Capacitors...

    Broader source: Energy.gov (indexed) [DOE]

    2010 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C. ape031liu2010p.pdf More Documents &...

  5. Fractal Inspired Models of Quark and Gluon Distributions and Longitudinal Structure Function FL(x, Q2) at small x

    E-Print Network [OSTI]

    Akbari Jahan; D. K. Choudhury

    2010-12-30T23:59:59.000Z

    In recent years, Fractal Inspired Models of quark and gluon densities at small x have been proposed. In this paper, we investigate longitudinal structure function F-L (x, Q2) within this approach. We make predictions using the QCD based approximate relation between the longitudinal structure function and the gluon density. As the Altarelli-Martinelli equation for the longitudinal structure function cannot be applied to Model I due to the presence of a singularity in the Bjorken x-space we consider Model II only. The qualitative feature of the prediction of Model II is found to be compatible with the QCD expectation.

  6. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

    SciTech Connect (OSTI)

    Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

    2012-01-01T23:59:59.000Z

    AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

  7. Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer

    SciTech Connect (OSTI)

    Chen, Z.; Denbaars, S. P. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106 (United States); Pei, Y.; Newman, S.; Chu, R.; Brown, D.; Keller, S.; Mishra, U. K. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Chung, R.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2009-03-16T23:59:59.000Z

    Semi-insulating (SI) GaN layers were grown on 4H-SiC substrates by inserting an AlGaN layer between the AlN buffer and the GaN layer. Secondary ion mass spectroscopy measurements showed that the AlGaN layer prevented Si from diffusing from the substrate into the GaN layer. X-ray diffraction and atomic force microscopy analyses showed that an optimized AlGaN interlayer does not degrade the crystal quality or surface morphology of the SI GaN. The room temperature mobility of an AlGaN/GaN heterostructure using this SI GaN was 2200 cm{sup 2}/V s. High electron mobility transistors (HEMTs) with 0.65 {mu}m long gates were also fabricated on these SI GaN buffers. A power density of 19.0 W/mm with a power added efficiency of 48% was demonstrated at 10 GHz at a drain bias of 78 V. These HEMTs also exhibited sharp pinch off, low leakage, and negligible dispersion.

  8. Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy Huajie Chen, Kista, Sweden Abstract Strain-compensated InGaAsP/InGaP superlattices are studied in cross- section. The strain compensated InGaAsP/InGaP/InP superlattices studied here have application for light sources

  9. AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN 1 epitaxially on AlGaN/GaN HFET structures by molecular beam epitaxy (MBE). Growth was first performed on GaN templates to establish epitaxial growth conditions. X-ray diffraction showed [001] TiO2 || [1010]GaN

  10. AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium; published 13 October 2004) Use of high-k gate dielectrics in AlGaN/GaN heterostructure field transconductance and pinchoff voltage. To achieve this, AlGaN/GaN metal-oxide-semiconductor heterostructure field

  11. In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device based on a

    E-Print Network [OSTI]

    Yang, Kyounghoon

    205 Abstract In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device basedBm at 2 GHz have been demonstrated from the fabricated device. 1. Introduction In recent years, AlGaN/GaN noise amplifier and switch. Superior results have been reported in microwave power performance of AlGaN/GaN

  12. A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design presents a new architecture for an AlGaN/GaN HEMT frequency doubler using the active integrated antenna. The antenna operates as a fundamental frequency reflector in this circuit. Using AlGaN/GaN with 1mm gate

  13. Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate,

    E-Print Network [OSTI]

    Boyer, Edmond

    Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Aristide Briand, 92.195 Meudon, France Abstract. Wide bandgap devices such as AlGaN/GaN High Electron of GR- bulges related respectively to AlGaN/GaN interface and quantum well are identified. Each GR

  14. Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2012-12-24T23:59:59.000Z

    Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

  15. A Multiphase, Modular, Bidirectional, Triple-Voltage DC-DC Converter Power Systems

    SciTech Connect (OSTI)

    Su, Gui-Jia [ORNL; Tang, Lixin [ORNL

    2008-01-01T23:59:59.000Z

    Electrical power systems in future hybrid and fuel cell vehicles may employ three voltage [14 V, 42 V, and high voltage (HV)] nets. These will be necessary to accommodate existing 14-V loads as well as efficiently handle new heavy loads at the 42-V net and a traction drive on the HV bus. A low-cost DC-DC converter was proposed for connecting the three voltage nets. It minimizes the number of switches and their associated gate driver components by using two half-bridges and a high-frequency transformer. Another salient feature is that the half bridge on the 42-V bus is also utilized to provide the 14-V bus by operating at duty ratios around an atypical value of 1/3. Moreover, it makes use of the parasitic capacitance of the switches and the transformer leakage inductance for soft switching. The use of half bridges makes the topology well suited for interleaved multiphase modular configurations as a means to increase the power level because the capacitor legs can be shared. This paper presents simulation and experimental results on an interleaved two-phase arrangement rated at 4.5 kW. Also discussed are the benefits of operating with an atypical duty ratio on the transformer and a preferred multiphase configuration to minimize capacitor ripple currents.

  16. Analysis of a transformer-less, multi-level DC-DC converter for HVDC operation

    SciTech Connect (OSTI)

    Karady, G.G.; Devarajan, S. [Arizona State Univ., Tempe, AZ (United States)

    1998-12-31T23:59:59.000Z

    HVDC systems require DC step up and DC step down units. The traditional approach is the application of twelve-pulse thyristor bridges with transformers. The developments of fast switching IGBT devices permit the development of transformer-less, multi-level converters. A multi-level circuit was suggested by Limpaecher. This paper presents a detailed simulation of the proposed circuit together with the analysis of its performance. The converter consists of a set of capacitors, air core inductors and solid state switches arranged in a ladder network. In the step-up mode, the closing of solid state switches resonantly charges the capacitors in parallel through an air-cored inductor. Then solid state switches resonantly charges the capacitors in parallel through an air-cored inductor. Then solid state switches connect the capacitors in series and discharge them through an air-core inductor to the load. In the step-down mode the capacitors are charged in series and discharged in parallel. The circuit has three modes of operation in each cycle: charge, inversion, and discharge. The circuit operation is analyzed in each mode using SPICE simulations. The selection of the components is discussed and output voltage regulation is analyzed. The results show that the proposed circuit promises significant reduction of losses, because of the zero current switching. The investment cost is reduced because of the elimination of transformers.

  17. High efficiency InGaP solar cells for InGaP/GaAs tandem cell application

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Kurita, H.; Ohmori, M. [Japan Energy Corp., Toda, Saitama (Japan). Central Research Lab.

    1994-12-31T23:59:59.000Z

    In this paper, high conversion efficiency single junction InGaP solar cells with n-p-p{sup +} structure are presented and their application to InGaP/GaAs monolithic tandem cells is discussed. In the InGaP cells, a best conversion efficiency of 18.48% was achieved by introducing the p{sup +} peak back surface field (BSF) layer with a high carrier concentration of 2 {times} 10{sup 18} cm{sup {minus}3}, which improved both short circuit current (Isc) and open circuit voltage (Voc). However, in the case of InGaP/GaAs tandem cells, a decrease in carrier concentration of the InGaP BSF layer, which was caused by the diffusion of Zn, was found to reduce the Isc and Voc of the tandem cell. The reduction in the carrier concentration was suppressed by using a thicker BSF layer of 0.5 {micro}m, which reduced the current density in the GaAs bottom cell. An InGaP/GaAs tandem cell with 27.3% efficiency and a high Voc of 2.418 V was obtained.

  18. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation

    E-Print Network [OSTI]

    Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phaseAs was 70% of that on bulk InP at both temperatures. To achieve this, graded buffers in the InGaAs, InGaP

  19. AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates

    E-Print Network [OSTI]

    Manfra, Michael J.

    PS-4 AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates Nils ABSTRACT Molecular Beam Epitaxy of GaN and related alloys is becoming a rival to the more established, and HVPE SI-GaN templates on sapphire. While sapphire and SI-Sic are established substrates for the growth

  20. ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    MOSCAP process ?ow: n-GaN substrate; Ohmic metallization andtion for a AlGaN/ GaN HEMT on a substrate which has a poorsapphire substrate, a well-passivated AlGaN/ GaN HEMT grown

  1. Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown

    SciTech Connect (OSTI)

    Kuzmik, J., E-mail: jan.kuzmik@savba.sk; Jurkovi?, M.; Greguov, D.; ?apajna, M. [Institute of Electrical Engineering SAS, Dubravska cesta 9, 841 04 Bratislava (Slovakia); Brunner, F.; Cho, M.; Wrfl, J. [Ferdinand-Braun-Institute, Leibnitz Institute fr Hchfrequenztechnik, Gustav-Kirchoff-Strasse 4, 12489 Berlin (Germany); Meneghesso, G. [Department of Information Engineering, University of Padova, via Gradenigo, 6/B 35131 Padova (Italy)

    2014-04-28T23:59:59.000Z

    We investigate degradation mechanisms in AlGaN/GaN HEMTs which were repeatedly driven into the current-controlled off-state breakdown or subject to 60 s voltage- or current-controlled off state stresses. The current-controlled sweep in to the breakdown allows the sustainability of breakdown that can not be observed in the voltage controlled sweep. Only temporal changes were observed in the HEMT dc performance after repetitive sweeps, which were explained by charging/discharging of the HEMT surface at the gate-to-drain access region and in the GaN buffer below the gate. Similar changes were observed also if high-voltage stress has been applied on the drain; however, permanent degradation appears after 60 s current-controlled breakdown stress. In this case, the drain leakage current, as well as the breakdown current, increases significantly. On the other hand, the breakdown voltage, as well as the gate characteristics, remains unaltered. We suggest that the avalanche-injection process is governing the off-state breakdown event with a dominant role of the potential barrier at the channel-buffer interface.

  2. Analysis and design of a saturable reactor assisted soft-switching full-bridge dc-dc converter

    SciTech Connect (OSTI)

    Hamada, Satoshi (Sansha Electric Manufacturing Co., Ltd., Osaka (Japan)); Nakaoka, Mutsuo (Kobe Univ. (Japan). Dept. of Electrical and Electronics Engineering)

    1994-05-01T23:59:59.000Z

    Analysis and design considerations for a saturable reactor assisted soft-switching full-bridge dc-dc converter are presented. The converter has advantages such as low switching losses with no substantial increase in conduction losses, wide load range, and constant frequency operation. To show how to utilize the analysis results, a 350-W, 500-kHz converter is chosen as a design example. The results are verified experimentally on a prototype converter.

  3. A High Efficiency DC-DC Converter Topology Suitable for Distributed Large Commercial and Utility Scale PV Systems

    SciTech Connect (OSTI)

    Mohammed S. Agamy; Maja Harfman-Todorovic; Ahmed Elasser; Robert L. Steigerwald; Juan A. Sabate; Song Chi; Adam J. McCann; Li Zhang; Frank Mueller

    2012-09-01T23:59:59.000Z

    In this paper a DC-DC power converter for distributed photovoltaic plant architectures is presented. The proposed converter has the advantages of simplicity, high efficiency, and low cost. High efficiency is achieved by having a portion of the input PV power directly fed forward to the output without being processed by the converter. The operation of this converter also allows for a simplified maximum power point tracker design using fewer measurements

  4. Green light emission by InGaN/GaN multiple-quantum-well microdisks

    SciTech Connect (OSTI)

    Hsu, Yu-Chi; Lo, Ikai, E-mail: ikailo@mail.phys.nsysu.edu.tw; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Tsai, Cheng-Da; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)] [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China); Hsu, Gary Z. L. [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)] [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)

    2014-03-10T23:59:59.000Z

    The high-quality In{sub x}Ga{sub 1?x}N/GaN multiple quantum wells were grown on GaN microdisks with ?-LiAlO{sub 2} substrate by using low-temperature two-step technique of plasma-assisted molecular beam epitaxy. We demonstrated that the hexagonal GaN microdisk can be used as a strain-free substrate to grow the advanced In{sub x}Ga{sub 1?x}N/GaN quantum wells for the optoelectronic applications. We showed that the green light of 566-nm wavelength (2.192?eV) emitted from the In{sub x}Ga{sub 1?x}N/GaN quantum wells was tremendously enhanced in an order of amplitude higher than the UV light of 367-nm wavelength (3.383?eV) from GaN.

  5. Reid Rosnick/DC/USEPA/US 10/25/2012 11:54 AM

    E-Print Network [OSTI]

    EPA-694 Reid Rosnick/DC/USEPA/US 10/25/2012 11:54 AM To Philip Egidi cc bcc Subject Re: Subpart W Pennsylvania Ave., NW Washington, DC 20460 202.343.9563 rosnick.reid@epa.gov -----Philip Egidi/DC/USEPA/US wrote: ----- To: Reid Rosnick/DC/USEPA/US@EPA From: Philip Egidi/DC/USEPA/US Date: 10/25/2012 11:41AM Cc

  6. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01T23:59:59.000Z

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  7. InGaP/GaAs and InGaAs mechanically-stacked triple-junction solar cells

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Agui, T. [Japan Energy Corp., Toda, Saitama (Japan)] [and others

    1997-12-31T23:59:59.000Z

    Triple-junction cells with AM1.5 efficiencies of over 33% have been demonstrated. A planar type InGaP/GaAs monolithic dual-junction cell was fabricated on a semi-insulating FaAs substrate, which has high infra-red transparency. Then a dual-junction cell, with efficiency of 27--28%, was mechanically stacked on an InGaAs cell fabricated on an InP substrate. The bottom InGaAs cell showed an efficiency of 6.2% under the InGaP/GaAs cell, and a total efficiency of 33--34% was achieved for the four-terminal triple-junction cell.

  8. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20T23:59:59.000Z

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  9. Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

    SciTech Connect (OSTI)

    Roul, Basanta; Kumar, Mahesh [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Rajpalke, Mohana K.; Bhat, Thirumaleshwara N.; Krupanidhi, S. B. [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Kalghatgi, A. T. [Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Kumar, Nitesh; Sundaresan, A. [Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bangalore 560064 (India)

    2011-10-17T23:59:59.000Z

    We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm{sup -1} in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy.

  10. Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2007-02-01T23:59:59.000Z

    The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

  11. September 16-21, 2007 Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN as etch-stop layer

    E-Print Network [OSTI]

    Pala, Nezih

    0 2 V(V) C(pF) Before etching (material) After etching (device) G AlGaN substrate i-GaN DS AlN AlGaN substrate AlN i-GaN AlGaN S G DAlGaNAlGaN InGaNInGaN Standard gate recess InGaN stop layer gate recess InGaNICNS 7 September 16-21, 2007 Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN

  12. Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen

    E-Print Network [OSTI]

    York, Robert A.

    Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen Materials Department March 2005 Titanium dioxide TiO2, with the rutile structure was grown on 0001 oriented GaN and 0001 Al0.33Ga0.67N/GaN heterostructure field effect transistor HFET structures by molecular beam epitaxy. X

  13. Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells

    E-Print Network [OSTI]

    Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN based on radial pin multi quantum well (QW) junctions have been realized from GaN wires grown by catalyst- free metal organic vapor phase epitaxy. The Inx Ga1x N/GaN undoped QW system is coated over both

  14. High density plasma damage in InGaP/GaAs as AlGaAs/GaAs high electron mobility transistors

    SciTech Connect (OSTI)

    Lee, J.W.; Pearton, S.J. [Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering; Ren, F.; Kopf, R.F.; Kuo, J.M. [Bell Labs., Murray Hill, NJ (United States). Lucent Technologies; Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States); Constantine, C.; Johnson, D. [Plasma-Therm Inc., St. Petersburg, FL (United States)

    1998-11-01T23:59:59.000Z

    The introduction of plasma damage in InGaP/GaAs and AlGaAs/GaAs high electron mobility transistors (HEMTs) has been investigated using both inductively coupled plasma and electron cyclotron resonance Ar discharges. The saturated drain-source current is found to be decreased through introduction of compensating deep levels into the InGaP or AlGaAs donor layer. The degradation of device performance is a strong function of ion energy and ion flux, and an advantage of both high density plasma tools is that ion energy can be reduced by increasing the plasma density. Increasing process pressure and source power, and decreasing radio-frequency chuck power produce the lowest amounts of plasma damage in HEMTs.

  15. Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates

    E-Print Network [OSTI]

    Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates, around 104 cm-2 . The structures, grown on GaP or GaAs, consist of graded In-fraction InGaP and AlInGaP. High surface roughness and branch defects in Al InGaP lead to the lowest quality virtual substrates we

  16. Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method

    E-Print Network [OSTI]

    Okamoto, Koichi

    Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method; 78.55.Cr; 78.67.De; S7.14 Carrier dynamics in GaN and InGaN/GaN SQW structures were observed by using inhomogeneity of In composition. Recently, InGaN/GaN-based light emitting diodes (LEDs) have been commercialized

  17. Surface science analysis of GaAs photocathodes following sustained electron beam delivery

    SciTech Connect (OSTI)

    Carlos Hernandez-Garcia, Fay Hannon, Marcy Stutzman, V. Shutthanandan, Z. Zhu, M. Nandasri, S. V. Kuchibhatla, S. Thevuthasan, W. P. Hess

    2012-06-01T23:59:59.000Z

    Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power Free Electron Lasers (FEL). Photocathode quantum efficiency (QE) degradation is due to residual gasses in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes, which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include Helium Ion Microscopy (HIM), Rutherford Backscattering Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the Continuous Electron Beam Accelerator Facility (CEBAF) photoinjector and one unused, were also analyzed using Transmission Electron Microscopy (TEM) and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but shows evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.

  18. N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

    E-Print Network [OSTI]

    Chung, Jinwook

    We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier ...

  19. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of InGaNGaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture Development and Industrialization of InGaNGaN LEDs on Patterned Sapphire...

  20. Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate

    E-Print Network [OSTI]

    Lu, Bin

    AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for power electronics applications. Despite the low cost of the Si substrate, the breakdown voltage (V[subscript ...

  1. Entertainment Technology Center, CMU Internship Survey Results, Dec 2013, May 2014, and Dec 2014

    E-Print Network [OSTI]

    Matsuda, Noboru

    Developer Mount Pleasant SC Visionary Works LLC UX Designer, Game Programmer Washington DC VOCI Technology, NM, OK, TX 2 West: CA, HI, NV 16 Southeast: AL, AR, FL, GA, KY, LA, MS, NC, PR, SC, TN 1 Midwest: IA Emails 28 Faculty Contacts 22 Personal Network 17 Interviews Arranged by Career Services 9 Intern Search

  2. Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA

    E-Print Network [OSTI]

    McGaughey, Alan

    Industrial Design ­ Shanghai, China Eaton Corporation ­ Pittsburgh, PA CMU, CTTEC ­ PittsburghSiemens ­ Pittsburgh, PA Novelis Corporation ­ Atlanta, GA Expense

  3. Strain-balanced InGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Van Den Broeck, D. M.; Hosalli, A. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-07-21T23:59:59.000Z

    InGaN/GaN multiple quantum well (MQW) structures suffer from a high amount of compressive strain in the InGaN wells and the accompanied piezoelectric field resulting in both a blue shift in emission and a reduction of emission intensity. We report the growth of In{sub x}Ga{sub 1?x}N/GaN strain-balanced multiple quantum wells (SBMQWs) grown on thick In{sub y}Ga{sub 1?y}N templates for x?>?y by metal organic chemical vapor deposition. SBMQWs consist of alternating layers of In{sub x}Ga{sub 1?x}N wells and GaN barriers under compressive and tensile stress, respectively, which have been lattice matched to a thick In{sub y}Ga{sub 1?y}N template. Growth of the In{sub y}Ga{sub 1?y}N template is also detailed in order to achieve thick, relaxed In{sub y}Ga{sub 1?y}N grown on GaN without the presence of V-grooves. When compared to conventional In{sub x}Ga{sub 1?x}N/GaN MQWs grown on GaN, the SBMQW structures exhibit longer wavelength emission and higher emission intensity for the same InN mole fraction due to a reduction in the well strain and piezoelectric field. By matching the average lattice constant of the MQW active region to the lattice constant of the In{sub y}Ga{sub 1?y}N template, essentially an infinite number of periods can be grown using the SBMQW growth method without relaxation-related effects. SBMQWs can be utilized to achieve longer wavelength emission in light emitting diodes without the use of excess indium and can be advantageous in addressing the green gap..

  4. High current gain InGaN=GaN HBTs with C operating temperature

    E-Print Network [OSTI]

    Asbeck, Peter M.

    with an $20 nm low-temperature (Tg 550 C) GaN buffer layer on a (0001) sapphire substrate. The layer 1018 cm3 Buffer GaN 2.5 mm Substrate Sapphire HBT device processing began by depositing a 100 nmHigh current gain InGaN=GaN HBTs with 300 C operating temperature D.M. Keogh, P.M. Asbeck, T. Chung

  5. Characterization of the PvdS-regulated promoter motif in Pseudomonas syringae pv. tomato DC3000 reveals

    E-Print Network [OSTI]

    Myers, Chris

    Characterization of the PvdS-regulated promoter motif in Pseudomonas syringae pv. tomato DC3000S, a group IV sigma factor encoded by Pseudomonas syringae pv. tomato DC3000 (DC3000), a plant pathogen, 2002; Potvin et al., 2008). The model plant pathogen Pseudomonas syringae pv. tomato DC3000 (DC3000

  6. DESIGN OF A DC/RF PHOTOELECTRON GUN.

    SciTech Connect (OSTI)

    YU,D.NEWSHAM,Y.SMIRONOV,A.YU,J.SMEDLEY,J.SRINIVASAN RAU,T.LEWELLEN,J.ZHOLENTS,A.

    2003-05-12T23:59:59.000Z

    An integrated dc/rf photoelectron gun produces a low-emittance beam by first rapidly accelerating electrons at a high gradient during a short ({approx}1 ns), high-voltage pulse, and then injecting the electrons into an rf cavity for subsequent acceleration. Simulations show that significant improvement of the emittance appears when a high field ({approx} 0.5-1 GV/m) is applied to the cathode surface. An adjustable dc gap ({le} 1 mm) which can be integrated with an rf cavity is designed for initial testing at the Injector Test Stand at Argonne National Laboratory using an existing 70-kV pulse generator. Plans for additional experiments of an integrated dc/rf gun with a 250-kV pulse generator are being made.

  7. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  8. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  9. Active dc filter for HVDC system--A test installation in the Konti-Skan DC link at Lindome converter station

    SciTech Connect (OSTI)

    Zhang, Wenyan; Asplund, G. (ABB Power Systems, Ludvika (Sweden). HVDC Division); Aberg, A. (ABB Corporate Research, Lund (Sweden). Dept. of Man-Machine Communication); Jonsson, U. (Svenska Kraftnaet, Vaellingby (Sweden)); Loeoef, O. (Vattenfall AB, Trollhaettan (Sweden). Region Vaestsverige)

    1993-07-01T23:59:59.000Z

    The purpose of introducing active dc filters is to meet the more and more stringent requirement from power utilities on limiting telephone interference caused by harmonic currents from HVdc transmission lines, without unnecessarily increasing the cost of HVdc stations. An active dc filter installed in the Konti-Skan HVdc link is described. The active dc filter is connected at the bottom of an existing passive dc filter at the Lindome station. The active dc filter includes optic harmonic current measuring unit, control system, protection and supervision system, PWM power amplifier, high-frequency transformer, surge arrester, and coupling apparatuses. The active dc filter has small physical size and occupies small ground area. The performance of the active dc filter for eliminating the disturbing harmonics is excellent. To achieve comparable results by passive filters would require something like ten times more high voltage equipment.

  10. Application of direct pulsewidth modulation scheme to AC-DC converters: - a way to reduce ripple

    E-Print Network [OSTI]

    Zhang, Yuemin

    1993-01-01T23:59:59.000Z

    Modulation (ISPWM), 4 Direct Pulsewidth Modulation (DPWM). 15 5 Single Phase Half Controlled PWM ac-dc Converter . 6 Single Phase Full controlled PWM ac-dc Converter . 18 18 7 Simulation of SPWM ac-dc Converter. 20 8 Output Voltage Spectra of SPWM ac... 30 Balanced Three Phase Inputs 31 Output Voltage of A Three Phase Full Controlled ac-dc SPWM Converter. 42 32 Output Voltage of A Three Phase Full Controlled ac-dc EPWM Con- verter 33 Output Voltage of A Three Phase Full Controlled ac-dc ISPWM Con...

  11. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01T23:59:59.000Z

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  12. Graphite electrode DC arc furnace. Innovative technology summary report

    SciTech Connect (OSTI)

    NONE

    1999-05-01T23:59:59.000Z

    The Graphite Electrode DC Arc Furnace (DC Arc) is a high-temperature thermal process, which has been adapted from a commercial technology, for the treatment of mixed waste. A DC Arc Furnace heats waste to a temperature such that the waste is converted into a molten form that cools into a stable glassy and/or crystalline waste form. Hazardous organics are destroyed through combustion or pyrolysis during the process and the majority of the hazardous metals and radioactive components are incorporated in the molten phase. The DC Arc Furnace chamber temperature is approximately 593--704 C and melt temperatures are as high as 1,500 C. The DC Arc system has an air pollution control system (APCS) to remove particulate and volatiles from the offgas. The advantage of the DC Arc is that it is a single, high-temperature thermal process that minimizes the need for multiple treatment systems and for extensive sorting/segregating of large volumes of waste. The DC Arc has the potential to treat a wide range of wastes, minimize the need for sorting, reduce the final waste volumes, produce a leach resistant waste form, and destroy organic contaminants. Although the DC arc plasma furnace exhibits great promise for treating the types of mixed waste that are commonly present at many DOE sites, several data and technology deficiencies were identified by the Mixed Waste Focus Area (MWFA) regarding this thermal waste processing technique. The technology deficiencies that have been addressed by the current studies include: establishing the partitioning behavior of radionuclides, surrogates, and hazardous metals among the product streams (metal, slag, and offgas) as a function of operating parameters, including melt temperature, plenum atmosphere, organic loading, chloride concentration, and particle size; demonstrating the efficacy of waste product removal systems for slag and metal phases; determining component durability through test runs of extended duration, evaluating the effect of feed composition variations on process operating conditions and slag product performance; and collecting mass balance and operating data to support equipment and instrument design.

  13. Fine structure of Fe-Co-Ga and Fe-Cr-Ga alloys with low Ga content

    SciTech Connect (OSTI)

    Kleinerman, Nadezhda M., E-mail: kleinerman@imp.uran.ru; Serikov, Vadim V., E-mail: kleinerman@imp.uran.ru; Vershinin, Aleksandr V., E-mail: kleinerman@imp.uran.ru; Mushnikov, Nikolai V., E-mail: kleinerman@imp.uran.ru; Stashkova, Liudmila A., E-mail: kleinerman@imp.uran.ru [Institute of Metal Physics UB RAS, S. Kovalevskaya str. 18, 620990 Ekaterinburg (Russian Federation)

    2014-10-27T23:59:59.000Z

    Investigation of Ga influence on the structure of Fe-Cr and Fe-Co alloys was performed with the use of {sup 57}Fe Mssbauer spectroscopy and X-ray diffraction methods. In the alloys of the Fe-Cr system, doping with Ga handicaps the decomposition of solid solutions, observed in the binary alloys, and increases its stability. In the alloys with Co, Ga also favors the uniformity of solid solutions. The analysis of Mssbauer experiments gives some grounds to conclude that if, owing to liquation, clusterization, or initial stages of phase separation, there exist regions enriched in iron, some amount of Ga atoms prefer to enter the nearest surroundings of iron atoms, thus forming binary Fe-Ga regions (or phases)

  14. TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer

    SciTech Connect (OSTI)

    Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

    2008-01-01T23:59:59.000Z

    It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

  15. Excitonic properties of strained wurtzite and zinc-blende GaNAlxGa1xN quantum dots

    E-Print Network [OSTI]

    Fonoberov, Vladimir

    Excitonic properties of strained wurtzite and zinc-blende GaNAlxGa1xN quantum dots Vladimir A 2003 We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite WZ of GaN QDs.18 Molecu- lar beam epitaxial growth in the StranskiKrastanov mode of wurtzite WZ Ga

  16. Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices

    E-Print Network [OSTI]

    Feenstra, Randall

    Morphological and compositional variations in strain- compensated InGaAsP/InGaP superlattices R of Technology, Kista, Sweden Abstract We have investigated the properties of strain-compensated InGaAsP/In- GaP superlattices, grown by metalorganic vapor phase epitaxy, with and without InP interlayers inserted in the InGaP

  17. Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1

    E-Print Network [OSTI]

    Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1 , Kristian of GaAs based self-aligned lasers based upon a single overgrowth. A lattice matched n-doped InGaP layer were exposed to oxygen. True buried heterostructures devices utilising InGaP clad- ding layers have

  18. Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates

    E-Print Network [OSTI]

    Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates M. J of unconventional alloys of InGaP with In fraction of 0.20.4 grown on fully relaxed GaAsP virtual substrates demonstrate growth of extremely high quality InGaP heterostructures which hold promise for fabrication

  19. Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M Abstract Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP band gap

  20. Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1

    E-Print Network [OSTI]

    Dietz, Nikolaus

    Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1 G. Ariyawansa,1 online 2 September 2009 A study of trap states in n+ -GaN/AlGaN heterostructures using electrical related absorption centers attributed to shallow Si-donor pinned to the AlGaN barrier , N-vacancy/ C

  1. High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop

    E-Print Network [OSTI]

    Itoh, Tatsuo

    High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop amplifier module using AlGaN/GaN high electron mobility transistor (HEMT) has been developed that covers radars and communications systems. GaN-based HEMT's for high power applications at microwave frequencies

  2. Embracing and Empowering Women to Serve Central Florida PO BOX 2895 Orlando FL 32802 ! wecOrlando.com ! facebook.com/wecOrlando ! scholarships@wecOrlando.com

    E-Print Network [OSTI]

    Van Stryland, Eric

    Orlando.com ! facebook.com/wecOrlando ! scholarships@wecOrlando.com 42nd ANNUAL WOMEN'S ACHIEVEMENT AWARDS EVENT Monday Orlando FL 32802 ! wecOrlando.com ! facebook.com/wecOrlando ! scholarships@wecOrlando.com All information 32802 ! wecOrlando.com ! facebook.com/wecOrlando ! scholarships@wecOrlando.com Please provide three (3

  3. Proceedings of the 1997 IEEE International Conference on Systems, Man, and Cybernetics (SMC'97) . Orlando, FL . Oct. 1215, 1997 DATA REPRESENTATION AND ORGANIZATION FOR AN INDUSTRIAL MULTISENSOR

    E-Print Network [OSTI]

    Naish, Michael D.

    INTEGRATION ARCHITECTURE Michael D. Naish and Elizabeth A. Croft Industrial Automation Laboratory Department) . Orlando, FL . Oct. 1215, 1997 DATA REPRESENTATION AND ORGANIZATION FOR AN INDUSTRIAL MULTISENSOR@mech.ubc.ca ABSTRACT An open architecture for intelligent multisensor integra tion in an industrial environment

  4. High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    DOE Patents [OSTI]

    Shimer, D.W.; Lange, A.C.

    1995-05-23T23:59:59.000Z

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

  5. High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    DOE Patents [OSTI]

    Shimer, Daniel W. (Danville, CA); Lange, Arnold C. (Livermore, CA)

    1995-01-01T23:59:59.000Z

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  6. Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Uren, M. J.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Keller, S.; Kolluri, S.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of Santa Barbara California, Santa Barbara, California 93106 (United States)

    2014-08-11T23:59:59.000Z

    The existence of impact ionization as one of the open questions for GaN device reliability was studied in N-polar AlGaN/GaN high electron mobility transistors. Electroluminescence (EL) imaging and spectroscopy from underneath the device gate contact revealed the presence of hot electrons in excess of the GaN bandgap energy even at moderate on-state bias conditions, enabling impact ionization with hole currents up to several hundreds of pA/mm. The detection of high energy luminescence from hot electrons demonstrates that EL analysis is a highly sensitive tool to study degradation mechanisms in GaN devices.

  7. Michael J. Poston Atlanta, GA 30307

    E-Print Network [OSTI]

    Orlando, Thomas

    Page | 1 Michael J. Poston Atlanta, GA 30307 Michael.Poston@gatech.edu Cell: 770.561.4756 U.S. Citizen Education PhD Candidate in Chemistry Georgia Institute of Technology, Atlanta, GA August 2007 with Application to Lunar Observations," JGR Planets, 118, 105, doi: 10.1002/jgre.20025. Poston, M. J

  8. Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor

    E-Print Network [OSTI]

    Peale, Robert E.

    of materials systems such as GaAs/AlGaAs,3 InGaP/InGaAs/GaAs,4 GaN/AlGaN,2,5 and Si Ref. 1 have been explored

  9. FUPWG Meeting Agenda - Atlanta, GA | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...

  10. Efficient Switches for Solar Power Conversion: Four Quadrant GaN Switch Enabled Three Phase Grid-Tied Microinverters

    SciTech Connect (OSTI)

    None

    2012-02-13T23:59:59.000Z

    Solar ADEPT Project: Transphorm is developing power switches for new types of inverters that improve the efficiency and reliability of converting energy from solar panels into useable electricity for the grid. Transistors act as fast switches and control the electrical energy that flows in an electrical circuit. Turning a transistor off opens the circuit and stops the flow of electrical current; turning it on closes the circuit and allows electrical current to flow. In this way a transistor can be used to convert DC from a solar panel into AC for use in a home. Transphorms transistors will enable a single semiconductor device to switch electrical currents at high-voltage in both directionsmaking the inverter more compact and reliable. Transphorm is using Gallium Nitride (GaN) as a semiconductor material in its transistors instead of silicon, which is used in most conventional transistors, because GaN transistors have lower losses at higher voltages and switching frequencies.

  11. Cl{sub 2}-based dry etching of the AlGaInN system in inductively coupled plasmas

    SciTech Connect (OSTI)

    Cho, Hyun; Vartuli, C.B.; Abernathy, C.R.; Donovan, S.M.; Pearton, S.J. [Florida Univ., Gainesville, FL (United States). Dept. of Materials Science and Engineering; Shul, R.J.; Han, J. [Sandia National Labs., NM (United States)

    1997-12-01T23:59:59.000Z

    Cl{sub 2}-based Inductively Coupled Plasmas with low additional dc self- biases(-100V) produce convenient etch rates(500-1500 A /min) for GaN, AlN, InN, InAlN and InGaN. A systematic study of the effects of additive gas(Ar, N{sub 2}, H{sub 2}), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent Cl{sub 2} in the discharge for all three mixtures, and to have an increase(decrease) in etch rate with source power(pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained.

  12. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Fujioka, H., E-mail: hfujioka@iis.u-tokyo.ac.jp [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); CREST, Japan Science and Technology Corporation (JST), 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 (Japan)

    2014-05-05T23:59:59.000Z

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  13. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar bandgap range. Index Terms--Epitaxy, GaAsP, InGaP, metamorphic. I. INTRODUCTION TODAY'S highest efficiency

  14. BEAM DYNAMICS SIMULATIONS FOR A DC GUN BASED INJECTOR FOR PERL...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DC gun. The schematic layout of a PERL DC gun based injector and its preliminary beam dynamics are presented in this paper. The transverse and longitudinal emittance of photo-...

  15. Analysis of Fe Nanoparticles Using XPS Measurements Under D.C...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Fe Nanoparticles Using XPS Measurements Under D.C. or Pulsed-Voltage Bias. Analysis of Fe Nanoparticles Using XPS Measurements Under D.C. or Pulsed-Voltage Bias. Abstract: The...

  16. If you reside in WASHINGTON, DC - MD -VA - WV your salary will...

    National Nuclear Security Administration (NNSA)

    If you are employed in the WASHINGTON, DC Metropolitan Area (D.C., Baltimore, Northern VA, Eastern WV, and Southern PA) your salary will range from: Pay Band Pay Plan(s) Minimum...

  17. Energy Secretary Moniz's Remarks at CSIS in Washington D.C. on...

    Energy Savers [EERE]

    Moniz's Remarks at CSIS in Washington D.C. on Energy Security 40 Years after the Embargo - As Delivered Energy Secretary Moniz's Remarks at CSIS in Washington D.C. on Energy...

  18. U.S. Department of Energy - Washington, DC | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Photovoltaic System at the Forrestal Building in Washington, DC The U.S. Department of Energy (DOE) is housed in the Forrestal Building in Washington, DC. A photovoltaic (PV)...

  19. Electrostatic coalescence system with independent AC and DC hydrophilic electrodes

    DOE Patents [OSTI]

    Hovarongkura, A. David (Arlington, VA); Henry, Jr., Joseph D. (Morgantown, WV)

    1981-01-01T23:59:59.000Z

    An improved electrostatic coalescence system is provided in which independent AC and DC hydrophilic electrodes are employed to provide more complete dehydration of an oil emulsion. The AC field is produced between an AC electrode array and the water-oil interface wherein the AC electrode array is positioned parallel to the interface which acts as a grounded electrode. The emulsion is introduced into the AC field in an evenly distributed manner at the interface. The AC field promotes drop-drop and drop-interface coalescence of the water phase in the entering emulsion. The continuous oil phase passes upward through the perforated AC electrode array and enters a strong DC field produced between closely spaced DC electrodes in which small dispersed droplets of water entrained in the continuous phase are removed primarily by collection at hydrophilic DC electrodes. Large droplets of water collected by the electrodes migrate downward through the AC electrode array to the interface. All phase separation mechanisms are utilized to accomplish more complete phase separation.

  20. DC WRRC Report No. 126 GROUND WATER RESOURCE ASSESSMENT STUDY

    E-Print Network [OSTI]

    District of Columbia, University of the

    DRILLING AND FIELD OPERATIONS REPORT FOR THE GROUP A WELLS D.C. WATER RESOURCES RESEARCH CENTER University No. 126 GROUND WATER RESOURCE ASSESSMENT STUDY FOR THE DISTRICT OF COLUMBIA WELL DRILLING AND FIELDDC WRRC Report No. 126 GROUND WATER RESOURCE ASSESSMENT STUDY FOR THE DISTRICT OF COLUMBIA WELL

  1. D.C. Water Resources Research Center Annual Technical Report

    E-Print Network [OSTI]

    and among agencies, universities, and other area researchers; and to support the development and Guidelines under the Water Resources Development Act, and other federal spending and activities relatedD.C. Water Resources Research Center Annual Technical Report FY 2009 D.C. Water Resources Research

  2. EE443L Lab 2: Modeling a DC Motor Introduction

    E-Print Network [OSTI]

    Wedeward, Kevin

    and add conversion factors. Copy the LabVIEW VI lab2.vi and its associated subVI Altera the four conversion factors. Motor voltage is measured with a voltage divider to ensure DAQ card analog: The DC motor is a common actuator in control systems that converts electrical energy into rotational

  3. DC Optimal Power Flow: Uniqueness and Chee Wei Tan

    E-Print Network [OSTI]

    Tan, Chee Wei

    and are computationally fast for practical smart power grids. I. BACKGROUND The Optimal Power Flow (OPF) problem network. The DC-OPF can be practically important in a smart grid, where there are renewables, e.g., solar implications on how algorithms can be designed to solve the OPF in a smart grid. Different from prior work

  4. D.C. Water Resources Research Institute Annual Technical Report

    E-Print Network [OSTI]

    projects that address the three components of integrated urban water system: storm water runoff and sewer developing and maintaining new environmental quality testing and modeling tools to advance water researchD.C. Water Resources Research Institute Annual Technical Report FY 2013 D.C. Water Resources

  5. Natural Gas Pipeline Leaks Across Washington, DC Robert B. Jackson,,,

    E-Print Network [OSTI]

    Jackson, Robert B.

    Natural Gas Pipeline Leaks Across Washington, DC Robert B. Jackson,,, * Adrian Down, Nathan G increased in recent decades, but incidents involving natural gas pipelines still cause an average of 17 fatalities and $133 M in property damage annually. Natural gas leaks are also the largest anthropogenic

  6. High Voltage DC Transmission 1.0 Introduction

    E-Print Network [OSTI]

    McCalley, James D.

    1 High Voltage DC Transmission 1.0 Introduction HVDC has been applied in electric power systems for many years now. Figure 1 illustrates worldwide many of the HVDC applications [1]. Fig. 1 ABB provides a webpage which summarizes HVDC projects by type and capacity or by commissioning year [2]. Wikipedia [3

  7. High Voltage DC Transmission 2 1.0 Introduction

    E-Print Network [OSTI]

    McCalley, James D.

    1 High Voltage DC Transmission 2 1.0 Introduction Interconnecting HVDC within an AC system requires on use of switching devices collectively referred to in the HVDC community as valves. Valves may be non. Fig. 1 There have been three types of devices for implementing HVDC converter circuits: mercury

  8. WASHINGTON TECHNICAL INSTITUTE WASHINGTON, D.C. 20008

    E-Print Network [OSTI]

    District of Columbia, University of the

    WASHINGTON TECHNICAL INSTITUTE WASHINGTON, D.C. 20008 WRRC REPORT NO. 9 CHARACTERIZATION-379, as amended. Agreement No. 14-34-0001-6066 Water Resources Research Center Washington Technical Institute Analysis of Composite Samples Before Concentration............ 16 5. Organic Losses During Concentration

  9. Reprint & Copyright by Aerospace Medical Association, Washington, DC

    E-Print Network [OSTI]

    Reprint & Copyright by Aerospace Medical Association, Washington, DC TECHNICAL NOTE Reflectance.EPICS Biomedical Engineering and Science Institute and Department of Electrical and Computer Engineering, Drexel and pulsatile and mean Doppler velocities were examined as predictors of impending peripheral light loss (PLL

  10. Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers

    SciTech Connect (OSTI)

    Ueda, O.; Wakao, K.; Yamaguchi, A.; Isozumi, S.; Komiya, S.

    1985-03-01T23:59:59.000Z

    Rapidly degraded InGaAsP/InGaP double-heterostructure lasers grown on (001)-oriented GaAs substrates by liquid phase epitaxy have been investigated by photolumi

  11. Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well

    SciTech Connect (OSTI)

    Zvonkov, B. N.; Nekorkin, S. M.; Vikhrova, O. V.; Dikareva, N. V., E-mail: dikareva@nifti.unn.ru [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

    2013-09-15T23:59:59.000Z

    The specific features of the emission characteristics of GaAs-based heterostructures with a GaAs{sub 1-x}Sb{sub x}-In{sub y}Ga{sub 1-y}As bilayer quantum well are studied. The heterostructures are grown by metal-organic chemical vapor deposition (MOCVD). With an analysis of previously reported data on the MOCVD growth process taken into account, the temperature range (560-580 Degree-Sign C), the relation between the fluxes emitted by the sources of Group-V and -III elements ( Less-Than-Or-Equivalent-To 1), and the order of layer growth for the production of the active region of a GaAs/InGaP laser heterostructure are determined experimentally. The active region is a GaAs{sub 0.75}Sb{sub 0.25}-In{sub 0.2}Ga{sub 0.8}As bilayer quantum well. For the structure, a 1075-nm electroluminescence signal attributed to indirect transitions between the valence band of the GaAs{sub 0.75}Sb{sub 0.25} layer and the conduction band of the In{sub 0.2}Ga{sub 0.8}As layer is observed. An increase in the continuous-wave pump current yields a decrease in the 1075-nm emission intensity and initiates stable lasing at a wavelength of 1022 nm at a threshold current density of 1.4 kA cm{sup -2} at room temperature. Lasing occurs at transitions direct in coordinate space.

  12. Building Scale DC Microgrids Chris Marnay, Steven Lanzisera, Michael Stadler, and Judy Lai

    E-Print Network [OSTI]

    of building loads are either native DC, such as electronics and compact fluorescent and light emitting diode

  13. Interviews in Washington, DC for Albert Einstein Fellowship Semi-Finalists

    Broader source: Energy.gov [DOE]

    Selected semi-finalists in the Albert Einstein Distinguished Educator Fellowship are invited to DC for interviews.

  14. A Decentralized Protection Scheme for Converters Utilizing a DC-link Inductor

    E-Print Network [OSTI]

    Lipo, Thomas

    - as in HVDC transmission for example - as well as in DC-links for high-power current source inverters

  15. AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh

    E-Print Network [OSTI]

    Itoh, Tatsuo

    AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh Department-mail: ykchung@ee.ucla.edu Abstract - This paper presents the first single-ended AlGaN/GaN heterojunction field, respectively. For the frequency doubler with 1mm gate periphery AlGaN/GaN HFET, conversion gain of 0.17 d

  16. Materials Science and Engineering B59 (1999) 319322 Microcalorimetric absorption spectroscopy in GaNAlGaN

    E-Print Network [OSTI]

    Nabben, Reinhard

    1999-01-01T23:59:59.000Z

    Microcalorimetric measurements of small absorption coefficients have been performed on thin GaNAlGaN quantum wells in GaNAlGaN quantum wells Axel Goldner a, *, Axel Hoffmann a , Bernard Gil b , Pierre Lefebvre b at the energy of the GaN buffer and at the energy of the thick AlGaN barrier layers, we could also readily

  17. Al fraction induced effects on the capacitance characteristics -GaN/AlxGa1-xN IR detectors

    E-Print Network [OSTI]

    Dietz, Nikolaus

    substrate. As shown in Fig. 1(a), the device structures consist of a 0.2 m n+ -GaN top contact (emitter.1117/12.828156 Proc. of SPIE Vol. 7467 74670W-1 #12;(a) Sapphire Substrate n GaN Bottom Contact AlxGa1-xN Barrier n GaNAl fraction induced effects on the capacitance characteristics of n+ -GaN/AlxGa1-xN IR detectors

  18. Improvement of breakdown voltage in InGaP/InGaAs/GaAs heterostructure MESFETs for MMICs

    SciTech Connect (OSTI)

    Koh, Inoue; Yamane, Yasuro; Shiojima, Kenji [NTT LSI Lab., Kanagawa (Japan)] [and others

    1995-12-31T23:59:59.000Z

    This paper describes the trade-off between breakdown voltage and RF performance of InGaP/InGaAs/GaAs heterostructure MESFETs for power amplifiers and oscillators in multi-function MMICs in the millimeter-wave range. The authors successfully improved both gate-drain and drain-source breakdown voltages while maintaining excellent high-frequency performance by using a double-layered gate consisting of WSiN with different nitrogen contents, and by varying epitaxial layer thickness and implantation dose.

  19. Control of a Fuel-Cell Powered DC Electric Vehicle Motor

    E-Print Network [OSTI]

    Skogestad, Sigurd

    Control of a Fuel-Cell Powered DC Electric Vehicle Motor Federico Zenith Sigurd Skogestad Meeting, 2005 www.ntnu.no Federico Zenith, Sigurd Skogestad, Control of a Fuel-Cell Powered DC Electric Vehicle Motor #12;2 Outline 1) Control of Fuel Cells--Status 2) Dynamic Modelling of Fuel Cells 3) DC

  20. Development of 13-V, 5000-A DC Power Supply with High-Frequency Transformer Coupling

    E-Print Network [OSTI]

    Fujimoto, Hiroshi

    -voltage and large-current DC power supply with a high-frequency transformer coupling, which is applied to electric. Keywords-DC power supply; low-voltage and large-current; high-frequency transformer; Schottky diodeDevelopment of 13-V, 5000-A DC Power Supply with High-Frequency Transformer Coupling Applied

  1. FLATNESS BASED CONTROL OF A BUCK-CONVERTER DRIVEN DC MOTOR

    E-Print Network [OSTI]

    Knobloch,Jrgen

    FLATNESS BASED CONTROL OF A BUCK-CONVERTER DRIVEN DC MOTOR Felix Antritter ,1 Peter Maurer Johann on the circuit and control design of a buck converter driven DC motor. The steps of design, as for example objective: tracking control of the DC motor's shaft angular velocity. The dynamic system composed from

  2. A Noise-Shaped Switched-Capacitor DC-DC Voltage Regulator A. Rao, W.McIntyre 1

    E-Print Network [OSTI]

    Moon, Un-Ku

    -dc converter with fractional gains. The charge pump used to convert the input voltage acts as a D/A converter the inductive conversion topology has been the standard solution to providing a constant and stable voltage from a battery. With the continued shrinking of the hand-held devices as cell phones, PDA's, pagers and laptops

  3. 164 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 21, NO. 1, JANUARY 2006 A Digitally Controlled DC/DC Converter

    E-Print Network [OSTI]

    Popovic, Zoya

    164 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 21, NO. 1, JANUARY 2006 A Digitally Controlled DC of power, dynamic control of the drain supply voltage has been proposed [1][6]. The technique of adjusting-loop implementation of the RFPA power control through the drain supply voltage. The ob- jectives are to improve

  4. Necessity of Ga prelayers in GaAs/Ge growth using gas-source molecular beam epitaxy

    E-Print Network [OSTI]

    in a highly defective GaAs layer.as5 Recently, InGaP light-emitting diodes have been fabricated on Si using

  5. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

    2011-01-07T23:59:59.000Z

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  6. High-efficiency radiation-resistant InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Takamoto, T. [Toyota Technological Inst., Tempaku, Nagoya (Japan); [Japan Energy Corp., Toda, Saitama (Japan); Yamaguchi, M.; Taylor, S.J. [Toyota Technological Inst., Tempaku, Nagoya (Japan); Ikeda, E.; Agui, T.; Kurita, H. [Japan Energy Corp., Toda, Saitama (Japan)

    1997-12-31T23:59:59.000Z

    A world-record efficiency of 26.9% (AM0, 28 C) has been obtained for InGaP/GaAs tandem solar cells fabricated by the MOCVD method. The radiation resistance of the InGaP/GaAs tandem solar cells has also been evaluated following 1 MeV electron irradiation. Degradation in the tandem cell performance has been confirmed to be mainly attributed to large degradation in the GaAs bottom cell, which features a highly doped base layer. Similar radiation-resistance with GaAs-on-Ge cells has been observed for the InGaP/GaAs tandem cell. However, some recovery of the tandem cell performance has been found due to minority-carrier injection under light illumination of forward bias, which causes defect annealing in InGaP cells. The optimal design of the InGaP base layer thickness for current matching at end of life (EOL) (after irradiation with 10{sup 15} electrons cm{sup {minus}2}) has been examined.

  7. Recovery Act: Integrated DC-DC Conversion for Energy-Efficient Multicore Processors

    SciTech Connect (OSTI)

    Shepard, Kenneth L

    2013-03-31T23:59:59.000Z

    In this project, we have developed the use of thin-film magnetic materials to improve in energy efficiency of digital computing applications by enabling integrated dc-dc power conversion and management with on-chip power inductors. Integrated voltage regulators also enables fine-grained power management, by providing dynamic scaling of the supply voltage in concert with the clock frequency of synchronous logic to throttle power consumption at periods of low computational demand. The voltage converter generates lower output voltages during periods of low computational performance requirements and higher output voltages during periods of high computational performance requirements. Implementation of integrated power conversion requires high-capacity energy storage devices, which are generally not available in traditional semiconductor processes. We achieve this with integration of thin-film magnetic materials into a conventional complementary metal-oxide-semiconductor (CMOS) process for high-quality on-chip power inductors. This project includes a body of work conducted to develop integrated switch-mode voltage regulators with thin-film magnetic power inductors. Soft-magnetic materials and inductor topologies are selected and optimized, with intent to maximize efficiency and current density of the integrated regulators. A custom integrated circuit (IC) is designed and fabricated in 45-nm CMOS silicon-on-insulator (SOI) to provide the control system and power-train necessary to drive the power inductors, in addition to providing a digital load for the converter. A silicon interposer is designed and fabricated in collaboration with IBM Research to integrate custom power inductors by chip stacking with the 45-nm CMOS integrated circuit, enabling power conversion with current density greater than 10A/mm2. The concepts and designs developed from this work enable significant improvements in performance-per-watt of future microprocessors in servers, desktops, and mobile devices. These new approaches to scaled voltage regulation for computing devices also promise significant impact on electricity consumption in the United States and abroad by improving the efficiency of all computational platforms. In 2006, servers and datacenters in the United States consumed an estimated 61 billion kWh or about 1.5% of the nation's total energy consumption. Federal Government servers and data centers alone accounted for about 10 billion kWh, for a total annual energy cost of about $450 million. Based upon market growth and efficiency trends, estimates place current server and datacenter power consumption at nearly 85 billion kWh in the US and at almost 280 billion kWh worldwide. Similar estimates place national desktop, mobile and portable computing at 80 billion kWh combined. While national electricity utilization for computation amounts to only 4% of current usage, it is growing at a rate of about 10% a year with volume servers representing one of the largest growth segments due to the increasing utilization of cloud-based services. The percentage of power that is consumed by the processor in a server varies but can be as much as 30% of the total power utilization, with an additional 50% associated with heat removal. The approaches considered here should allow energy efficiency gains as high as 30% in processors for all computing platforms, from high-end servers to smart phones, resulting in a direct annual energy savings of almost 15 billion kWh nationally, and 50 billion kWh globally. The work developed here is being commercialized by the start-up venture, Ferric Semiconductor, which has already secured two Phase I SBIR grants to bring these technologies to the marketplace.

  8. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

    2014-09-08T23:59:59.000Z

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  9. Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells

    E-Print Network [OSTI]

    Alpay, S. Pamir

    Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple InxGa1-xN(InGaN)/GaN multilayers on the In composition and misfit strain. The results indicate that for non-polar m-plane configurations with 1210InGaN//1210GaN and 0001InGaN//0001GaN epitaxial

  10. Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2014-04-28T23:59:59.000Z

    Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

  11. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. [National Kaohsiung Normal University, Department of Electronic Engineering (China)], E-mail: jhtsai@nknucc.nknu.edu.tw; Chiu, S.-Y.; Lour, W.-S. [National Taiwan Ocean University, Department of Electrical Engineering (China); Guo, D.-F. [Air Force Academy, Department of Electronic Engineering (China)

    2009-07-15T23:59:59.000Z

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  12. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

    2014-04-24T23:59:59.000Z

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  13. Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Li, Z. L.; Wang, X. Q.; Huang, C. C.; Rong, X.; Xu, F. J.; Tang, N.; Qin, Z. X.; Shen, B. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)] [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Sang, L. W.; Sumiya, M. [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)] [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Chen, Y. H. [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China)] [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)] [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2013-05-13T23:59:59.000Z

    Intersubband transitions (ISBT) of AlGaN/GaN multiple quantum wells (MQWs) with wavelength towards atmospheric window (3-5 {mu}m) have been investigated. A Ga-excess epitaxial method is used in the molecular beam epitaxy leading to ultra-sharp interface and negligible elements inter-diffusion. The absorption peak wavelength of the ISBT was successfully tuned in the range of 3-4 {mu}m by modifying the GaN well thickness from 2.8 to 5.5 nm. It was further found that the polarization charge density of the AlGaN/GaN MQWs was about -0.034 C/m{sup 2} which gave rise to blueshift of the ISBT wavelength and thus partially compensated its redshift with increasing well thickness.

  14. InGaN/GaN single-quantum-well microdisks

    SciTech Connect (OSTI)

    Hsu, Yu-Chi; Lo, Ikai; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)

    2012-06-11T23:59:59.000Z

    We have grown In{sub x}Ga{sub 1-x}N/GaN quantum wells atop GaN microdisk with {gamma}-LiAlO{sub 2} substrate by using plasma-assisted molecular beam epitaxy. The structural and optical properties of the samples were analyzed by transmission electron microscopy, x-ray diffraction, cathodoluminescence, and photoluminescence measurements. Based on the measured results, we obtained the indium concentration of the In{sub x}Ga{sub 1-x}N/GaN single quantum well to be x = 0.25 with a band-gap energy of 2.31 eV, which is consistent with the bowing effect of bulk In{sub x}Ga{sub 1-x}N: E{sub g}(x) = [3.42 - x * 2.65 - x * (1 - x) * 2.4] eV.

  15. Atomic layer deposition of GaN using GaCl3 and NH3 Oh Hyun Kim, Dojun Kim, and Tim Andersona

    E-Print Network [OSTI]

    Anderson, Timothy J.

    be grown at lower temperature than by CVD. As example, ALD growth of device quality GaAs, GaP, and InGaP

  16. Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures

    SciTech Connect (OSTI)

    Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

    2014-01-13T23:59:59.000Z

    In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

  17. AlGaN/GaN field effect transistors for power electronicsEffect of finite GaN layer thickness on thermal characteristics

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Anaya Calvo, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)] [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom); Stoffels, S.; Marcon, D. [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)] [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)

    2013-11-11T23:59:59.000Z

    AlGaN/GaN heterostructure field effect transistors with a 150?nm thick GaN channel within stacked Al{sub x}Ga{sub 1?x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60?W m{sup ?1} K{sup ?1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.

  18. InGaAsP/InGaP buried heterostructure lasers at 810 nm

    SciTech Connect (OSTI)

    Wakao, K.; Isozumi, S.; Nishi, H.; Ohsaka, S.

    1984-12-01T23:59:59.000Z

    InGaAsP/InGaP buried heterostructure lasers emitting at 810 nm have been grown on GaAs substrates using two-step liquid-phase epitaxy. A threshold current of 79 mA and an external differential quantum efficiency of 26% are obtained. Fundamental transverse mode operation up to 3 mW is achieved in the laser with the active region of 3.5 ..mu..m wide.

  19. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

    2014-04-24T23:59:59.000Z

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  20. Ohmic contacts to n-GaSb

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01T23:59:59.000Z

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  1. The structure of GaAs/Si(211) heteroepitaxial layers

    SciTech Connect (OSTI)

    Liliental-Weber, Z.; Weber, E.R.; Washburn, J.; Liu, T.Y.; Kroemer, H.

    1985-05-01T23:59:59.000Z

    Gallium arsenide films grown on (211)Si by molecular-beam epitaxy have been investigated using transmission electron microscopy. The main defects observed in the alloy were of misfit dislocations, stacking faults, and microtwin lamellas. Silicon surface preparation was found to play an important role on the density of defects formed at the Si/GaAs interface. Two different types of strained-layer superlattices, InGaAs/InGaP and InGaAs/GaAs, were applied either directly to the Si substrate, to a graded layer (GaP-InGaP), or to a GaAs buffer layer to stop the defect propagation into the GaAs films. Applying InGaAs/GaAs instead of InGaAs/InGaP was found to be more effective in blocking defect propagation. In all cases of strained-layer superlattices investigated, dislocation propagation was stopped primarily at the top interface between the superlattice package and GaAs. Graded layers and unstrained AlGaAs/GaAs superlattices did not significantly block dislocations propagating from the interface with Si. Growing of a 50 nm GaAs buffer layer at 505/sup 0/C followed by 10 strained-layer superlattices of InGaAs/GaAs (5 nm each) resulted in the lowest dislocation density in the GaAs layer (approx.5 x 10/sup 7//cm/sup 2/) among the structures investigated. This value is comparable to the recently reported density of dislocations in the GaAs layers grown on (100)Si substrates. Applying three sets of the same strained layers decreased the density of dislocations an additional approx.2 to 3 times.

  2. Low DC-power Ku-band RTD VCO based on an InP monolithic RTD/HBT technology

    E-Print Network [OSTI]

    Yang, Kyounghoon

    device technologies such as InGaP/GaAs HBT [1], GaAs HFET [2], GaAs pHEMT [3], and Si CMOS [4]. Along

  3. Over 30{percent} efficient InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Kurita, H. [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan); Ohmori, M. [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)] [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)

    1997-01-01T23:59:59.000Z

    A two-terminal monolithic InGaP/GaAs tandem solar cell with a new efficiency record of 30.28{percent} is realized with a practical large area of 4 cm{sup 2} under one-sun air-mass 1.5 global illumination. We report improvements of the tandem cell performance by introducing a double-hetero (hereafter DH) structure InGaP tunnel junction, in which the InGaP layers are surrounded by high band gap AlInP barriers. The DH structure by AlInP barriers increase the peak current of InGaP tunnel junction. The AlInP barrier directly below the InGaP top cell, which takes the part of a back surface field (hereafter BSF) layer, is found to be considerably effective in reflecting minority carriers in the top cell. The AlInP BSF layer does not only form a high potential barrier but also prevents the diffusion of zinc from a high doped tunnel junction toward the top cell during epitaxial growth. Furthermore, an InGaP tunnel junction reduces the absorption loss, which exists in a GaAs tunnel junction, and increases the photogenerated current in the GaAs bottom cell. {copyright} {ital 1997 American Institute of Physics.}

  4. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23T23:59:59.000Z

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  5. Dependence of plasma characteristics on dc magnetron sputter parameters

    SciTech Connect (OSTI)

    Wu, S.Z. [Recording Media Operation, Seagate Technology, 47010 Kato Road, Fremont, California 94538 (United States)

    2005-10-15T23:59:59.000Z

    Plasma discharge characteristics of a dc magnetron system were measured by a single Langmuir probe at the center axis of the dual-side process chamber. Plasma potential, floating potential, electron and ion densities, and electron temperature were extracted with varying dc power and gas pressure during sputter deposition of a metal target; strong correlations were shown between these plasma parameters and the sputter parameters. The electron density was controlled mostly by secondary electron generation in constant power mode, while plasma potential reflects the confinement space variation due to change of discharge voltage. When discharge pressure was varied, plasma density increases with the increased amount of free stock molecules, while electron temperature inversely decreased, due to energy-loss collision events. In low-pressure discharges, the electron energy distribution function measurements show more distinctive bi-Maxwellian distribution, with the fast electron temperature gradually decreases with increased gas pressure.

  6. Multilevel cascade voltage source inverter with seperate DC sources

    DOE Patents [OSTI]

    Peng, Fang Zheng (Knoxville, TN); Lai, Jih-Sheng (Blacksburg, VA)

    2002-01-01T23:59:59.000Z

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  7. Multilevel cascade voltage source inverter with seperate DC sources

    DOE Patents [OSTI]

    Peng, Fang Zheng (Oak Ridge, TN); Lai, Jih-Sheng (Knoxville, TN)

    1997-01-01T23:59:59.000Z

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  8. Multilevel cascade voltage source inverter with seperate DC sources

    DOE Patents [OSTI]

    Peng, Fang Zheng; Lai, Jih-Sheng

    2001-04-03T23:59:59.000Z

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  9. Multilevel cascade voltage source inverter with separate DC sources

    DOE Patents [OSTI]

    Peng, F.Z.; Lai, J.S.

    1997-06-24T23:59:59.000Z

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations. 15 figs.

  10. This document is a preprint of the paper: L. Meng, T. Dragicevic, J.M. Guerrero, and J.C Vasquez, "Optimization with system damping restoration for droop controlled dc-dc converters," in

    E-Print Network [OSTI]

    Vasquez, Juan Carlos

    , "Optimization with system damping restoration for droop controlled dc-dc converters," in Proc. IEEE Energy Restoration for Droop Controlled DC-DC Converters Lexuan Meng, Tomislav Dragicevic, Josep M. Guerrero, Juan C systems and uninterruptable power supply systems. Droop control along with virtual resistance (VR

  11. Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Pomeroy, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)

    2014-02-14T23:59:59.000Z

    We demonstrate the ability of confocal Raman thermography using a spatial filter and azimuthal polarization to probe vertical temperature gradients within the GaN buffer layer of operating AlGaN/GaN high electron mobility transistors. Temperature gradients in the GaN layer are measured by using offset focal planes to minimize the contribution from different regions of the GaN buffer. The measured temperature gradient is in good agreement with a thermal simulation treating the GaN thermal conductivity as homogeneous throughout the layer and including a low thermal conductivity nucleation layer to model the heat flow between the buffer and substrate.

  12. USCOMM-WB-DC PRELIMZNARY REPORT OH HURRICANE DAISY

    E-Print Network [OSTI]

    QC 945.2 .D3 H8 1958 c.2 #12;#12;USCOMM-WB-DC #12;PRELIMZNARY REPORT OH HURRICANE DAISY AWGUST 24-29, 1958 Hurricane "Daisy", intense but small in area, was detected as a tropical storm about 300 miles into a hurricane on August 25. A u g u s t 27 it drifted very slowly northward. coast increased. the Atlantic off

  13. Disc rotors with permanent magnets for brushless dc motor

    SciTech Connect (OSTI)

    Hawsey, R.A.; Bailery, J.M.

    1992-05-26T23:59:59.000Z

    This patent describes a brushless dc permanent magnet motor for driving an autonomous underwater vehicle. It comprises first and second substantially flat, generally cylindrical stators disposed in side by side relation; a first substantially flat, generally cylindrical rotor; a first shaft connected to the first rotor and a second, concentric shaft connected to the second rotor; and means for providing rotation of the first and second shafts in opposite directions.

  14. The Use of DC Glow Discharges as Undergraduate Educational Tools

    SciTech Connect (OSTI)

    Stephanie A. Wissel and Andrew Zwicker, Jerry Ross, and Sophia Gershman

    2012-10-09T23:59:59.000Z

    Plasmas have a beguiling way of getting students excited and interested in physics. We argue that plasmas can and should be incorporated into the undergraduate curriculum as both demonstrations and advanced investigations of electromagnetism and quantum effects. Our device, based on a direct current (DC) glow discharge tube, allows for a number of experiments into topics such as electrical breakdown, spectroscopy, magnetism, and electron temperature.

  15. DC and RF Measurements of Serial Bi-SQUID Arrays

    E-Print Network [OSTI]

    Prokopenko, G V; de Escobar, A Leese; Taylor, B; de Andrade, M C; Berggren, S; Longhini, P; Palacios, A; Nisenoff, M; Fagaly, R L

    2012-01-01T23:59:59.000Z

    SQUID arrays are promising candidates for low profile antennas and low noise amplifier applications. We present the integrated circuit designs and results of DC and RF measurements of the wideband serial arrays based on integration of linear bi-SQUID cells forming a Superconducting Quantum Interference Filter (bi-SQUID SQIF). Various configurations of serial arrays designs are described. The measured linearity, power gain, and noise temperature are analyzed and compared. The experimental results are matched to results of mathematical modeling. A serial bi-SQUID SQIF arrays are mounted into a coplanar waveguide (CPW) and symmetrically grounded to corresponding sides of CPW. The RF output comes out from the central common line, which is also used for DC biasing and forms a symmetrical balanced output. The signal and DC flux biasing line is designed as coplanar lines passed in parallel over each bi-SQUID cell in a bidirectional fashion concentrating magnetic flux inside of each cell. Serial bi-SQUID SQIF arrays ...

  16. Summary of electric vehicle dc motor-controller tests

    SciTech Connect (OSTI)

    McBrien, E F; Tryon, H B

    1982-09-01T23:59:59.000Z

    Available performance data for production motors are usually of marginal value to the electric vehicle designer. To provide at least a partial remedy to this situation, tests of typical dc propulsion motors and controllers were conducted as part of the DOE Electric Vehicle Program. The objectives of this program were to evaluate the differences in the performance of dc motors when operating with chopper-type controllers and when operating on direct current; and to gain an understanding of the interactions between the motor and the controller which cause these differences. Toward this end, motor-controller tests performed by the NASA Lewis Research Center provided some of the first published data that quantified motor efficiency variations for both ripple-free (straight dc) and chopper modes of operation. Test and analysis work at the University of Pittsburgh explored motor-controller relationships in greater depth. And to provide additional data, 3E Vehicles tested two small motors, both on a dynamometer and in a vehicle, and the Eaton Corporation tested larger motors, using sophisticated instrumentation and digital processing techniques. All the motors tested were direct-current types. Of the separately excited types, seven were series wound and two were shunt wound. One self-excited permanent magnet type was also tested. Four of the series wound motors used brush shifting to obtain good commutation. In almost all cases, controller limitations constrained the test envelope so that the full capability of the motors could not be explored.

  17. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    with the active thermoelectric cooling implemented on the same material system can improve the device performance, for the pro- posed cooling system should also be based on GaN. To real- ize this, the high-efficiency Ga,6 Great progress has been achieved in GaN-based microwave technology. GaN transistors with very high

  18. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01T23:59:59.000Z

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  19. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

    E-Print Network [OSTI]

    The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs 1. Introduction, performance of these devices has been limited by self-heating [1] [6]. Thus, accurate modeling of heat diffusion and self-heating effects in AlGaN/GaN heterostructures and device optimization based

  20. InAsGaPInGaP high-temperature power Schottky rectifier and J. M. Woodall

    E-Print Network [OSTI]

    Woodall, Jerry M.

    C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion is thought to be due to strong covalent bonding at the InAs/GaP interface. The InAs/GaP heterointerface effectively blocks impurity diffusion. Since InGaP is superior to GaP for high-power applica- tions, as shown

  1. GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

    E-Print Network [OSTI]

    GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer K.M. Groom, B fabrication, is demonstrated. An n-doped InGaP layer is utilised for both electrical and optical confinement-doped InGaP current blocking layer that also provides optical confinement. This tech- nology relies

  2. GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization

    E-Print Network [OSTI]

    Wetzel, Christian M.

    GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical 12180-3590, U.S.A. ABSTRACT The wide bandgap polar semiconductors GaN and ZnO and their related alloys fields, and surface terminations. With a small lattice mismatch of ~1.8 % between GaN and Zn

  3. Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates

    E-Print Network [OSTI]

    Nabben, Reinhard

    Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates: time-resolved photoluminescence, quantum dots, InGaN, Si substrate There exists a strong continuous expensive and are limited in size. Thus, heteroepitaxial growth of GaN on silicon substrates seems

  4. Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    -emitting diodes LEDs on low-defect density bulk GaN substrate, but not in green LEDs on sapphire substrate an ideal substrate for homoepitaxial growth. Here we study the microstructural properties of green GaInN/GaN-Koehler force10 resulting from a macroscopic relaxation of strain. II. CRYSTAL GROWTH c plane bulk GaN substrate

  5. Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    quantum well (QW) light-emitting diodes (LEDs) grown on sapphire and bulk GaN substrate by micro efficiency in dies grown on GaN substrates with a thermal resistance of 75 K/W. For dies on sapphire of GaN-based blue and green LEDs grown on sapphire and GaN substrates using micro-Raman spectroscopy

  6. Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy

    E-Print Network [OSTI]

    Nabben, Reinhard

    . The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate-grown heterostructures can drastically be reduced by using a template of MOVPE-GaN on the sapphire substrate, which leadsCorrelation between structural properties and optical amplification in InGaN/GaN heterostructures

  7. Abstract -This paper presents the coordinated control of distributed energy storage systems (DESSs) in DC micro-grids.

    E-Print Network [OSTI]

    Vasquez, Juan Carlos

    ) in DC micro-grids. In order to balance the state-of-charge (SoC) of each energy storage unit (ESU--Droop control; distributed energy storage system (DESS); DC micro-grids; state-of-charge (SoC) I. INTRODUCTION and more popularity [1]. Nowadays DC micro-grids are becoming more attractive with the raise of DC power

  8. Optimal Demand Response in DC Distribution Networks Hamed Mohsenian-Rad, Member, IEEE and Ali Davoudi, Member, IEEE

    E-Print Network [OSTI]

    Mohsenian-Rad, Hamed

    such as photovoltaic systems are essentially DC sources. Battery storage devices are also easier H. Mohsenian

  9. Multiphase soft switched DC/DC converter and active control technique for fuel cell ripple current elimination

    DOE Patents [OSTI]

    Lai, Jih-Sheng (Blacksburg, VA); Liu, Changrong (Sunnyvale, CA); Ridenour, Amy (Salem, VA)

    2009-04-14T23:59:59.000Z

    DC/DC converter has a transformer having primary coils connected to an input side and secondary coils connected to an output side. Each primary coil connects a full-bridge circuit comprising two switches on two legs, the primary coil being connected between the switches on each leg, each full-bridge circuit being connected in parallel wherein each leg is disposed parallel to one another, and the secondary coils connected to a rectifying circuit. An outer loop control circuit that reduces ripple in a voltage reference has a first resistor connected in series with a second resistor connected in series with a first capacitor which are connected in parallel with a second capacitor. An inner loop control circuit that reduces ripple in a current reference has a third resistor connected in series with a fourth resistor connected in series with a third capacitor which are connected in parallel with a fourth capacitor.

  10. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04T23:59:59.000Z

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  11. Metastable states in InGaN/GaN MQW structures doped with Sm, Eu, and Eu + Sm

    SciTech Connect (OSTI)

    Mezdrogina, M. M., E-mail: Margaret.M@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Kozhanova, Yu. V. [St. Petersburg State Polytechnical University (Russian Federation)

    2013-04-15T23:59:59.000Z

    Measurements of the microphotoluminescence (microPL) spectra of InGaN/GaN:Sm and InGaN/GaN:Eu quantum well (QW) structures show that the action of a magnetic field gives rise to Van Vleck paramagnetism for Eu{sup 3+} and Sm{sup 3+}. The macrophotoluminescence (macroPL) spectra recorded after measuring the microPL spectra of InGaN/GaN QW structures doped with Sm or Eu + Sm at a high excitation level (>10{sup 23} photons cm{sup -2} s{sup -1}) in magnetic fields contain no QW emission lines which are present in the macroPL spectra recorded before these microPL measurements. This is indicative of the presence of photoinduced defects. Annealing of the InGaN/GaN:Sm and InGaN/GaN:(Eu + Sm) structures reduces the concentration of photoinduced defects.

  12. Gas-source molecular beam epitaxial growth and characterization of the (Al,In,Ga)NP/GaP material system and Its applications to light-emitting diodes

    E-Print Network [OSTI]

    Odnoblyudov, Vladimir

    2006-01-01T23:59:59.000Z

    on metamorphic growth of InGaP layers on GaP substrates, astemperature amber photoluminescence from InGaP QWs, grownon a metamorphic InGaP layer. References: Fred Shubert E. ,

  13. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06T23:59:59.000Z

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  14. Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    BastaniNejad, Mahzad; Elmustafa, Abdelmageed A.; Forman, Eric; Covert, Steven; Hansknecht, John; Hernandez-Garcia, Carlos; Poelker, Matthew; Das, Lopa; Kelley, Michael; Williams, Phillip

    2015-07-01T23:59:59.000Z

    DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (~nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>?A) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolishedmoreby conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.less

  15. ccsd-00000821(version1):6Nov2003 Alloy effects in Ga1-xInxN/GaN heterostructures

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    ccsd-00000821(version1):6Nov2003 Alloy effects in Ga1-xInxN/GaN heterostructures Duc-Phuong Nguyen, France We show that the large band offsets between GaN and InN and the heavy carrier effec- tive masses preclude the use of the Virtual Crystal Approximation to describe the electronic structure of Ga1-xInxN/GaN

  16. DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS

    E-Print Network [OSTI]

    Honsberg, Christiana

    DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS Omkar Jani1 with a band gap of 2.4 eV or greater. InxGa1-xN is one of a few alloys that can meet this key requirement. InGaN.4 eV. InGaN has the appropriate optical properties and has been well demonstrated for light

  17. AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD

    E-Print Network [OSTI]

    Boyer, Edmond

    AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD R. Meunier1 , A, 38054 Grenoble Cedex 9, France 2 LAAS-CNRS, 7 Avenue du Colonel Roche, 31400 Toulouse, France AlGaN /GaN behavior. Those trapped charges can be associated to the carbon contamination of the AlGaN surface

  18. Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

    E-Print Network [OSTI]

    Bowers, John

    Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth S for publication 5 January 1999 The emission mechanisms of bulk GaN and InGaN quantum wells QWs were studied suggest that TDs simply reduce the net volume of light-emitting area. This effect is less pronounced in InGaN

  19. Comparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities

    E-Print Network [OSTI]

    Boyer, Edmond

    , transmission and absorption spectra of bulk GaAs, GaN and ZnO microcavities, in order to compareComparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities SAs and GaN microcavities. PACS numbers: 78.67.-n, 71.36.+c, 78.20.Ci, 78.55.Cr, 78.55.Et Keywords: polariton

  20. Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells

    E-Print Network [OSTI]

    As, Donat Josef

    molecular beam epitaxy on free standing 3C-SiC 001 substrates. During growth of Al0.15Ga0.85N/GaN quantum growth of the quantum structures an 800 nm thick GaN buffer layer was deposited on the 3C-SiC substrate. The buffer and the c-AlGaN/GaN quantum wells were grown at a substrate temperature of 720 C. The layers were

  1. Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template

    SciTech Connect (OSTI)

    Wang, Y.D.; Zang, K.Y.; Chua, S.J.; Tripathy, S.; Chen, P.; Fonstad, C.G. [Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2005-12-19T23:59:59.000Z

    We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

  2. AlGaN/GaN HEMT With 300-GHz fmax

    E-Print Network [OSTI]

    Chung, Jinwook W.

    We report on a gate-recessed AlGaN/GaN high-electron mobility transistor (HEMT) on a SiC substrate with a record power-gain cutoff frequency (f[subscript max]). To achieve this high f[subscript max], we combined a low-damage ...

  3. Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

    E-Print Network [OSTI]

    Piner, Edwin L.

    This letter describes a gate-first AlGaN/GaN high-electron mobility transistor (HEMT) with a W/high-k dielectric gate stack. In this new fabrication technology, the gate stack is deposited before the ohmic contacts, and ...

  4. High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

    E-Print Network [OSTI]

    Hartono, Haryono

    The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. ...

  5. Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors

    E-Print Network [OSTI]

    Lu, Bin

    In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...

  6. Investigation of Strain in AlGaN/GaN Multi Quantum Wells by Complementary Techniques

    SciTech Connect (OSTI)

    Devaraju, G.; Sathish, N.; Pathak, A. P. [School of Physics, University of Hyderabad, Central University (P.0), Hyderabad 500 046 (India); Dhamodaran, S. [Department of Physics, Indian Institute of Technology, IIT P O, Kanpur UP 208016 (India); Gaca, J.; Wojcik, M. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Turos, A. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Soltan Institute for Nuclear Studies, Swierk/Otwock, Warsaw (Poland); Arora, B. M. [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai-400 005 (India)

    2009-03-10T23:59:59.000Z

    Al{sub 0.49}Ga{sub 0.51}N(12 nm)/GaN (13 nm) Multi Quantum Wells of 15 periods are grown on sapphire by MOCVD technique. GaN/AlN, each of thickness 200 nm and 20 nm respectively, are used as buffer layers between substrate and epilayer to incorporate the strain in epilayers. It is a well established technique to engineer the band gap in Al{sub x}Ga{sub 1-x}N by adjusting alloy composition. These samples are used in visible and UV light emitters. In the present study, we employ a photoluminescence technique to estimate the composition and luminescence peak positions of AlGaN and GaN. Crystallinity and quality of interfaces have been studied by Rocking curve scan. The Threading Dislocations formed at the GaN buffer layer travel across the entire layers to the surface to form good quality films. Photo-luminescence results show a very sharp GaN peak at 3.4 eV, as observed and reported by others, which shows that samples are free from point defects.

  7. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [LNESS and Dipartimento di Scienza dei Materiali, Universit di Milano Bicocca, Via Cozzi 55, I20125 Milano (Italy); Fedorov, Alexey [LNESS and CNRIFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21T23:59:59.000Z

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nanodisks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.310.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(2.11) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III adatoms on IIIV crystal surfaces and the fabrication of designable nanostructures.

  8. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

    1997-05-01T23:59:59.000Z

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  9. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02T23:59:59.000Z

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  10. Large internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko, Gerald Hnig, Christian Kindel, Sven Rodt, Andr Strittmatter et al.

    E-Print Network [OSTI]

    Nabben, Reinhard

    Large internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko, Gerald Hnig, Christian transitions in wurtzite InGaN/GaN coupled quantum dot nanowire heterostructures with polarization internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko,a Gerald Hnig, Christian Kindel, Sven

  11. Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Guibao Xu, Guan Sun, Yujie J. Ding, Hongping Zhao, Guangyu Liu et al.

    E-Print Network [OSTI]

    Gilchrist, James F.

    Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Guibao Xu, Guan Sun, Yujie overgrowth on residual strain and In incorporation in a-plane InGaN/GaN quantum wells on r- sapphire substrates J. Appl. Phys. 113, 023506 (2013) Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple

  12. Quantum confinement in GaP nanoclusters

    SciTech Connect (OSTI)

    Laurich, B.K.; Smith, D.C.; Healy, M.D.

    1994-06-01T23:59:59.000Z

    We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.

  13. UID-GaN doping1016 cm-3 2 m 5 m2 m

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    2 m Drain Silicon UID-GaN doping1016 cm-3 1.1 m 2 m GateSource 2 m 5 m2 m AirAir Al0.25GaN doping1015 cm-3 30 nm Drain Silicon UID-GaN P-GaNSource AirAir AlxGaN Drain Silicon UID-GaN GateSource AirAir AlxGaN Gate (a) (b) (c) Drain Silicon UID-GaN P-GaNSource AirAir AlxGaN Gate (d) P-GaN P-GaN 30

  14. Hardwired Control Changes For NSTX DC Power Feeds

    SciTech Connect (OSTI)

    Ramakrishnan, S.

    2013-06-28T23:59:59.000Z

    The National Spherical Torus Experiment (NSTX) has been designed and installed in the existing facilities at Princeton Plasma Physics Laboratory (PPPL). Most of the hardware, plant facilities, auxiliary sub-systems, and power systems originally used for the Tokamak Fusion Test Reactor (TFTR) have been used with suitable modifications to reflect NSTX needs. The original TFTR Hardwired Control System (HCS) with electromechanical relays was used for NSTX DC Power loop control and protection during NSTX operations. As part of the NSTX Upgrade, the HCS is being changed to a PLC-based system with the same control logic. This paper gives a description of the changeover to the new PLC-based system __________________________________________________

  15. Superconducting DC and RF Properties of Ingot Niobium

    E-Print Network [OSTI]

    Dhakal, Pashupati; Kneisel, Peter; Myneni, Ganapati Rao

    2012-01-01T23:59:59.000Z

    The thermal conductivity, DC magnetization and penetration depth of large-grain niobium hollow cylindrical rods fabricated from ingots, manufactured by CBMM subjected to chemical and heat treatment were measured. The results confirm the influence of chemical and heat-treatment processes on the superconducting properties, with no significant dependence on the impurity concentrations in the original ingots. Furthermore, RF properties, such as the surface resistance and quench field of the niobium rods were measured using a TE011 cavity. The hollow niobium rod is the center conductor of this cavity, converting it to a coaxial cavity. The quench field is limited by the critical heat flux through the rods' cooling channel.

  16. The dc modeling program (DCMP): Version 2. 0

    SciTech Connect (OSTI)

    Chapman, D.G. (Manitoba HVDC Research Centre, Winnipeg, MB (Canada))

    1990-08-01T23:59:59.000Z

    In this project one of the main objectives was the refinement of tools for the study of HVDC systems. The original software was prepared in project RP1964-2 (EL-4365) as power flow and stability program models for HVDC systems. In this project new modeling capabilities were added to both the power flow and stability models. Additionally, the HVDC specific model capabilities were integrated into a new program, termed the Standalone program, for use in the development and testing of HVDC models. This manual provides technical background for programmers and those interested in understanding, augmenting or transporting the dc models.

  17. Positron lifetime spectrometer using a DC positron beam

    DOE Patents [OSTI]

    Xu, Jun; Moxom, Jeremy

    2003-10-21T23:59:59.000Z

    An entrance grid is positioned in the incident beam path of a DC beam positron lifetime spectrometer. The electrical potential difference between the sample and the entrance grid provides simultaneous acceleration of both the primary positrons and the secondary electrons. The result is a reduction in the time spread induced by the energy distribution of the secondary electrons. In addition, the sample, sample holder, entrance grid, and entrance face of the multichannel plate electron detector assembly are made parallel to each other, and are arranged at a tilt angle to the axis of the positron beam to effectively separate the path of the secondary electrons from the path of the incident positrons.

  18. Category:DC Resistivity Survey (Wenner Array) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, click here. Category:Conceptual Model Add.png Add a newpage?InformationDC

  19. EA-327-A DC Energy, LLC | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't Your Destiny:Revised Finding of No53197EFindingEA-257-CEA-296-B22 Emera EnergyEA-326327-A DC

  20. PowerCentsDC Program Final Report | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn'tOrigin of Contamination in235-1Department of60Power Purchase Agreements PowerPowerCentsDC Program

  1. EA-327-A DC Energy, LLC | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742Energy China 2015 Business42.1Energy |Final Site-WideBPAPowerEE US No.Subsidary No. 5 LLCtoDC

  2. EA-377 DC Energy Texas | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the YouTube|6721 Federal Register / Vol. 73, No.Plant for5: Finding7:11:D3 EDF Trading67 DC

  3. DC Resistivity Survey (Dipole-Dipole Array) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty EditCalifornia:PowerCER.pngRoofs andCrops Ltd Jump to: navigation, searchDC

  4. Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers

    SciTech Connect (OSTI)

    Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

    2013-05-28T23:59:59.000Z

    Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

  5. Epitaxial GaN films by hyperthermal ion-beam nitridation of Ga droplets

    SciTech Connect (OSTI)

    Gerlach, J. W.; Ivanov, T.; Neumann, L.; Hoeche, Th.; Hirsch, D.; Rauschenbach, B. [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), D-04318 Leipzig (Germany)

    2012-06-01T23:59:59.000Z

    Epitaxial GaN film formation on bare 6H-SiC(0001) substrates via the process of transformation of Ga droplets into a thin GaN film by applying hyperthermal nitrogen ions is investigated. Pre-deposited Ga atoms in well defined amounts form large droplets on the substrate surface which are subsequently nitridated at a substrate temperature of 630 Degree-Sign C by a low-energy nitrogen ion beam from a constricted glow-discharge ion source. The Ga deposition and ion-beam nitridation process steps are monitored in situ by reflection high-energy electron diffraction. Ex situ characterization by x-ray diffraction and reflectivity techniques, Rutherford backscattering spectrometry, and electron microscopy shows that the thickness of the resulting GaN films depends on the various amounts of pre-deposited gallium. The films are epitaxial to the substrate, exhibit a mosaic like, smooth surface topography and consist of coalesced large domains of low defect density. Possible transport mechanisms of reactive nitrogen species during hyperthermal nitridation are discussed and the formation of GaN films by an ion-beam assisted process is explained.

  6. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09T23:59:59.000Z

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  7. Sustainable Energy Utility- D.C. Home Performance (District of Columbia)

    Broader source: Energy.gov [DOE]

    The District of Columbia Sustainable Energy Utility currently offers the D.C. Home Performance program (DCHP). DCHP provides a $500 incentive to properties which successfully complete qualifying...

  8. Washington DC Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Washington DC Regions National Science Bowl (NSB) NSB Home About High School Middle School Middle School Students Middle School Coaches Middle School Regionals Middle School...

  9. Optimizing Energy Savings from Direct-DC in U.S. Residential Buildings

    E-Print Network [OSTI]

    Garbesi, Karina

    2012-01-01T23:59:59.000Z

    currently being entirely off-grid is much more costly andcan operate off the DC Flexzone Grid [20] and are developing

  10. Harnessing the Power of the Sun, Solar Impulse Plane Lands in DC Area

    Broader source: Energy.gov [DOE]

    Today, Secretary Moniz spoke at an event welcoming the arrival of the solar-powered Solar Impulse plane at Dulles International Airport near Washington, D.C.

  11. We Have a Winner - DC High School Regional Science Bowl Competition...

    Broader source: Energy.gov (indexed) [DOE]

    We Have a Winner - DC High School Regional Science Bowl Competition Held Last Saturday Annie Whatley Annie Whatley Deputy Director, Office of Minority Education and Community...

  12. Optimization of spin-torque switching using AC and DC pulses

    SciTech Connect (OSTI)

    Dunn, Tom [Department of Physics, University of Minnesota, Minneapolis, Minnesota 55455 (United States); Kamenev, Alex [Department of Physics, University of Minnesota, Minneapolis, Minnesota 55455 (United States); Fine Theoretical Physics Institute, University of Minnesota, Minneapolis, Minnesota 55455 (United States)

    2014-06-21T23:59:59.000Z

    We explore spin-torque induced magnetic reversal in magnetic tunnel junctions using combined AC and DC spin-current pulses. We calculate the optimal pulse times and current strengths for both AC and DC pulses as well as the optimal AC signal frequency, needed to minimize the Joule heat lost during the switching process. The results of this optimization are compared against numeric simulations. Finally, we show how this optimization leads to different dynamic regimes, where switching is optimized by either a purely AC or DC spin-current, or a combination AC/DC spin-current, depending on the anisotropy energies and the spin-current polarization.

  13. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01T23:59:59.000Z

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  14. PHYSICAL REVIEW B 85, 045319 (2012) Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities

    E-Print Network [OSTI]

    Vuckovic, Jelena

    2012-01-01T23:59:59.000Z

    in materials systems, including InP/InGaP,69 InP/GaP,10,11 InP/AlGaInP,12,13 GaInP/GaP,14 InAs/GaP,15 and Al have been observed only in the InP/InGaP and InP/AlGaInP systems. GaP-based materials, by contrastP compared to InGaP is preferable for on-chip frequency downconversion to telecom wavelengths. Recently,17

  15. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States); Yarrison-Rice, Jan [Department of Physics, Miami University, Oxford, OH 45056 (United States); Gao, Qiang; Tan, Hoe; Jagadish, Chennupati [Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Etheridge, Joanne [Monash Centre for Electron Microscopy, Monash University, Victoria, 3800 (Australia); Wong, Bryan M. [Materials Chemistry Department, Sandia National Laboratories, Livermore, CA 94551 (United States)

    2013-12-04T23:59:59.000Z

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  16. Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

    SciTech Connect (OSTI)

    Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Universit Europenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Cosmes, 35708 Rennes (France)] [Universit Europenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Cosmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)] [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Fsica, Universidade Federal do Cear, P.O. Box 6030, FortalezaCE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain)] [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Llus Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Universit de Rennes 1, F-35042 Rennes Cedex (France)] [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Universit de Rennes 1, F-35042 Rennes Cedex (France)

    2014-01-06T23:59:59.000Z

    The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

  17. Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates

    SciTech Connect (OSTI)

    Kandaswamy, P. K.; Monroy, E. [CEA/CNRS group 'Nanophysique et semiconducteurs', INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Machhadani, H.; Sakr, S.; Tchernycheva, M.; Julien, F. H. [Photis, Institut d'Electronique Fondamentale, Universite Paris-Sud, 91405 Orsay Cedex (France); Bougerol, C. [CEA/CNRS group 'Nanophysique et semiconducteurs', Institut Neel, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)

    2009-10-05T23:59:59.000Z

    We report on the observation of midinfrared intersubband absorption in Si-doped GaN/AlGaN superlattices grown by plasma-assisted molecular-beam epitaxy on semi-insulating GaN-on-Si(111) templates. TM-polarized absorption attributed to transition between the first two electronic levels in the quantum wells peaked in the range from 2 to 9 {mu}m. The relative spectral width remains around 20% in the whole midinfrared spectral range. Doping is predicted to have a large influence on the intersubband absorption energy due to screening of polarization-induced internal electric field.

  18. Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN

    SciTech Connect (OSTI)

    Sheu, J.K.; Lee, M.L.; Tun, C.J.; Lin, S.W. [Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Electro-Optical Engineering, Southern Taiwan University of Technology, No.1, Nantai St, Yung-Kang City, Tainan 710, Taiwan (China); Institute of Optical Science, National Central University, Jhongli 32001, Taiwan (China)

    2006-01-23T23:59:59.000Z

    This work prepared Al-doped ZnO(AZO) films using dc sputtering to form Schottky contacts onto GaN films with low-temperature-grown GaN cap layer. Application of ultraviolet photodetector showed that spectral responsivity exhibits a narrow bandpass characteristic ranging from 345 to 375 nm. Moreover, unbiased peak responsivity was estimated to be around 0.12 A/W at 365 nm, which corresponds to a quantum efficiency of around 40%. In our study, relatively low responsivity can be explained by the marked absorption of the AZO contact layer. When the reverse biases were below 5 V, the study revealed that dark currents were well below 5x10{sup -12} A even though the samples were annealed at increased temperatures.

  19. PMCI'Fl.

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    not limited to: programmed lowering of thermostat settings, placement of timers on hot water heaters, installation of solar hot water systems. installation of efficient...

  20. FL J. Smith, Jr.

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling CorpNew 1325.8.Enaineer;/:4,4ct. B. Duillap

  1. Waste form development for a DC arc furnace

    SciTech Connect (OSTI)

    Feng, X.; Bloomer, P.E.; Chantaraprachoom, N.; Gong, M.; Lamar, D.A.

    1996-09-01T23:59:59.000Z

    A laboratory crucible study was conducted to develop waste forms to treat nonradioactive simulated {sup 238}Pu heterogeneous debris waste from Savannah River, metal waste from the Idaho National Engineering Laboratory (INEL), and nominal waste also from INEL using DC arc melting. The preliminary results showed that the different waste form compositions had vastly different responses for each processing effect. The reducing condition of DC arc melting had no significant effects on the durability of some waste forms while it decreased the waste form durability from 300 to 700% for other waste forms, which resulted in the failure of some TCLP tests. The right formulations of waste can benefit from devitrification and showed an increase in durability by 40%. Some formulations showed no devitrification effects while others decreased durability by 200%. Increased waste loading also affected waste form behavior, decreasing durability for one waste, increasing durability by 240% for another, and showing no effect for the third waste. All of these responses to the processing and composition variations were dictated by the fundamental glass chemistry and can be adjusted to achieve maximal waste loading, acceptable durability, and desired processing characteristics if each waste formulation is designed for the result according to the glass chemistry.

  2. DC switching regulated power supply for driving an inductive load

    DOE Patents [OSTI]

    Dyer, G.R.

    1983-11-29T23:59:59.000Z

    A dc switching regulated power supply for driving an inductive load is provided. The regulator basic circuit is a bridge arrangement of diodes and transistors. First and second opposite legs of the bridge are formed by first and second parallel-connected transistor arrays, respectively, while the third and fourth legs of the bridge are formed by appropriately connected first and second parallel connected diode arrays, respectively. A dc power supply is connected to the input of the bridge and the output is connected to the load. A servo controller is provided to control the switching rate of the transistors to maintain a desired current to the load. The regulator may be operated in three stages or modes: (1) for current runup in the load, both first and second transistor switch arrays are turned on and current is supplied to the load through both transistor arrays. (2) When load current reaches the desired level, the first switch is turned off, and load current flywheels through the second switch array and the fourth leg diode array connecting the second switch array in series with the load. Current is maintained by alternating between modes 1 and 2 at a suitable duty cycle and switching rate set by the controller. (3) Rapid current rundown is accomplished by turning both switch arrays off, allowing load current to be dumped back into the source through the third and fourth diode arrays connecting the source in series opposition with the load to recover energy from the inductive load.

  3. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01T23:59:59.000Z

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  4. Degradation mechanisms of GaN high electron mobility transistors

    E-Print Network [OSTI]

    Joh, Jungwoo

    2007-01-01T23:59:59.000Z

    In spite of their extraordinary performance, GaN high electron mobility transistors (HEMT) have still limited reliability. In RF power applications, GaN HEMTs operate at high voltage where good reliability is essential. ...

  5. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgl Okur [Department of Statistics, Giresun University, Giresun (Turkey); Akdemir, Hande Gnay; ??can, ?mdat [Department of Mathematics, Giresun University, Giresun (Turkey)

    2014-08-20T23:59:59.000Z

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  6. TEM-Untersuchungen an GaN basierten Halbleiterheterostrukturen fur

    E-Print Network [OSTI]

    Schubart, Christoph

    TEM-Untersuchungen an GaN basierten Halbleiterheterostrukturen fur optoelektronische Anwendungen . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 5.1.2 Versetzungen bei Homoapitaxie auf GaN-Substraten . . . . 79 5.2 Versetzungsreduktion durch

  7. GaN Nanopore Arrays: Fabrication and Characterization

    E-Print Network [OSTI]

    Wang, Yadong

    GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...

  8. Height stabilization of GaSb/GaAs quantum dots by Al-rich capping

    SciTech Connect (OSTI)

    Smakman, E. P., E-mail: e.p.smakman@tue.nl; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands); DeJarld, M.; Martin, A. J.; Millunchick, J. [Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Luengo-Kovac, M.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2014-09-01T23:59:59.000Z

    GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

  9. 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly ...

  10. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A. [Institute of Physics, NASU, Pr. Nauki 46, Kiev 03028 (Ukraine); Belyaev, A. E. [Institute of Semiconductor Physics, NASU, Pr. Nauki 45, Kiev 03028 (Ukraine); Vitusevich, S. A., E-mail: s.vitusevich@fz-juelich.de; Hardtdegen, H.; Lth, H. [Peter Grnberg Institute (PGI-8,PGI-9), Forschungszentrum Jlich, Jlich D-52425 (Germany)

    2014-02-17T23:59:59.000Z

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  11. Quercetin 3-O-methyl ether protects FL83B cells from copper induced oxidative stress through the PI3K/Akt and MAPK/Erk pathway

    SciTech Connect (OSTI)

    Tseng, Hsiao-Ling, E-mail: lily1001224@gmail.com [Department of Life Sciences, Tzu Chi University, Hualien, Taiwan (China)] [Department of Life Sciences, Tzu Chi University, Hualien, Taiwan (China); Li, Chia-Jung, E-mail: 97751101@stmail.tcu.edu.tw [Institute of Medical Sciences, Tzu Chi University, Hualien, Taiwan (China)] [Institute of Medical Sciences, Tzu Chi University, Hualien, Taiwan (China); Huang, Lin-Huang, E-mail: yg1236@yahoo.com.tw [School of Medicine, Institute of Traditional Medicine, National Yang-Ming University, Taipei, Taiwan (China)] [School of Medicine, Institute of Traditional Medicine, National Yang-Ming University, Taipei, Taiwan (China); Chen, Chun-Yao, E-mail: cychen@mail.tcu.edu.tw [Department of Life Sciences, Tzu Chi University, Hualien, Taiwan (China)] [Department of Life Sciences, Tzu Chi University, Hualien, Taiwan (China); Tsai, Chun-Hao, E-mail: 100726105@stmail.tcu.edu.tw [Department of Life Sciences, Tzu Chi University, Hualien, Taiwan (China)] [Department of Life Sciences, Tzu Chi University, Hualien, Taiwan (China); Lin, Chun-Nan, E-mail: lincna@cc.kmu.edu.tw [Faculty of Pharmacy, College of Pharmacy, Kaohsiung Medical University, Kaohsiung, Taiwan (China) [Faculty of Pharmacy, College of Pharmacy, Kaohsiung Medical University, Kaohsiung, Taiwan (China); Department of Biological Science and Technology, School of Medicine, China Medical University, Taichung, Taiwan (China); Hsu, Hsue-Yin, E-mail: hsueyin@mail.tcu.edu.tw [Department of Life Sciences, Tzu Chi University, Hualien, Taiwan (China)] [Department of Life Sciences, Tzu Chi University, Hualien, Taiwan (China)

    2012-10-01T23:59:59.000Z

    Quercetin is a bioflavonoid that exhibits several biological functions in vitro and in vivo. Quercetin 3-O-methyl ether (Q3) is a natural product reported to have pharmaceutical activities, including antioxidative and anticancer activities. However, little is known about the mechanism by which it protects cells from oxidative stress. This study was designed to investigate the mechanisms by which Q3 protects against Cu{sup 2+}-induced cytotoxicity. Exposure to Cu{sup 2+} resulted in the death of mouse liver FL83B cells, characterized by apparent apoptotic features, including DNA fragmentation and increased nuclear condensation. Q3 markedly suppressed Cu{sup 2+}-induced apoptosis and mitochondrial dysfunction, characterized by reduced mitochondrial membrane potential, caspase-3 activation, and PARP cleavage, in Cu{sup 2+}-exposed cells. The involvement of PI3K, Akt, Erk, FOXO3A, and Mn-superoxide dismutase (MnSOD) was shown to be critical to the survival of Q3-treated FL83B cells. The liver of both larval and adult zebrafish showed severe damage after exposure to Cu{sup 2+} at a concentration of 5 ?M. Hepatic damage induced by Cu{sup 2+} was reduced by cotreatment with Q3. Survival of Cu{sup 2+}-exposed larval zebrafish was significantly increased by cotreatment with 15 ?M Q3. Our results indicated that Cu{sup 2+}-induced apoptosis in FL83B cells occurred via the generation of ROS, upregulation and phosphorylation of Erk, overexpression of 14-3-3, inactivation of Akt, and the downregulation of FOXO3A and MnSOD. Hence, these results also demonstrated that Q3 plays a protective role against oxidative damage in zebrafish liver and remarked the potential of Q3 to be used as an antioxidant for hepatocytes. Highlights: ? Protective effects of Q3 on Cu{sup 2+}-induced oxidative stress in vitro and in vivo. ? Cu{sup 2+} induced apoptosis in FL83B cells via ROS and the activation of Erk. ? Q3 abolishes Cu{sup 2+}-induced apoptosis through the PI3K/Akt and MAPK/Erk pathway.

  12. AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications

    E-Print Network [OSTI]

    Seo, Kwang Seok

    AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching 16, 2004; accepted May 10, 2005; published September 8, 2005) We have proposed and fabricated an AlGaN/GaN: GaN, AlGaN, HEMT, switch 1. Introduction GaN has attracted attention for high-power and high

  13. Cubic AlGaN/GaN Hetero-Junction Field-Effect Transistors with Normally-on and Normally-off

    E-Print Network [OSTI]

    As, Donat Josef

    Cubic AlGaN/GaN Hetero-Junction Field-Effect Transistors with Normally-on and Normally-effect transistors (HFETs) in GaN technology. HFET structures were fabricated of non-polar cubic AlGaN/GaN hetero insulation of 3C-SiC was realized by Ar+ implantation before c-AlGaN/GaN growth. HFETs with normally

  14. A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    WE4A-5 A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs Jane J a GaN-based broadband power amplifier using AlGaN/GaN-HEMTs, grown on sapphire substrates amplifier using GaN- HEMTs-on-Sapphire. I INTRODUCTION GaN HEMTs have enormous potential for realizing high

  15. IPAP Conference Series 1: IWN2000, Nov., 2000 1 Morphology Dependent Growth Kinetics of Ga-polar GaN(0001)

    E-Print Network [OSTI]

    Cohen, Philip I.

    IPAP Conference Series 1: IWN2000, Nov., 2000 1 Morphology Dependent Growth Kinetics of Ga-polar GaN, cohen@ece.umn.edu GaN grown on Ga polar GaN templates prepared by metal-organic vapor deposition shows to equilibrium models of the growth. The results indicate that Ga-polar GaN(0001) has a step energy of the order

  16. Engineering of AlGaN-Delta-GaN Quantum-Well Gain Media for Mid-and Deep-Ultraviolet Lasers

    E-Print Network [OSTI]

    Gilchrist, James F.

    Engineering of AlGaN-Delta-GaN Quantum-Well Gain Media for Mid- and Deep-Ultraviolet Lasers Volume.1109/JPHOT.2013.2248705 1943-0655/$31.00 2013 IEEE #12;Engineering of AlGaN-Delta-GaN Quantum-Well Gain@Lehigh.Edu). Abstract: The gain characteristics of AlGaN-delta-GaN quantum wells (QWs) with varying delta-GaN positions

  17. Recent progress in InGaAsSb/GaSb TPV devices

    SciTech Connect (OSTI)

    Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

    1996-05-01T23:59:59.000Z

    AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

  18. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

    2014-09-26T23:59:59.000Z

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  19. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Haj?asz, M., E-mail: m.hajlasz@m2i.nl [Materials innovation institute (M2i), Mekelweg 2, 2628 CD, Delft (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); Gravesteijn, D. J. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Rietveld, F. J. R. [NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen (Netherlands); Schmitz, J. [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)

    2014-06-16T23:59:59.000Z

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  20. TEM and HRXRD Analysis of LP MOVPE Grown InGaP/GaAs epilayers

    SciTech Connect (OSTI)

    Pelosi, Claudio; Bosi, Matteo; Attolini, Giovanni; Germini, Fabrizio; Frigeri, Cesare [CNR-IMEM Institute, Parco Area delle Scienze 37a, Loc Fontanini 43010 Parma (Italy); Prutskij, Tatiana [Instituto de Ciencias, BUAP, Privada 17 Norte, no. 3417, colSanMiguel Hueyotlipan, 72050 Puebla, Pue. (Mexico)

    2007-04-10T23:59:59.000Z

    The diffusion phenomena at interfaces between GaAs/InGaP layers grown by low pressure MOVPE have been studied by dark field (DF) transmission Electron Microscopy (TEM) and High resolution X-ray Diffractometry (HRXRD). By comparing the results of the two techniques a mismatched layer containing P or P and In has been evidenced. The causes of this behavior are briefly discussed.

  1. Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes

    E-Print Network [OSTI]

    Cornelius S. Bausch; Aune Koitme; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

    2013-05-06T23:59:59.000Z

    We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

  2. InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening

    SciTech Connect (OSTI)

    Glauser, Marlene; Mounir, Christian; Rossbach, Georg; Feltin, Eric; Carlin, Jean-Franois; Butt, Raphal; Grandjean, Nicolas [cole Polytechnique Fdrale de Lausanne (EPFL), Institute of Condensed Matter Physics, CH-1015 Lausanne (Switzerland)

    2014-06-21T23:59:59.000Z

    Contrary to the case of III-nitride based visible light-emitting diodes for which the inhomogeneous linewidth broadening characteristic of InGaN-based multiple quantum well (MQW) heterostructures does not appear as a detrimental parameter, such a broadening issue can prevent a microcavity (MC) system entering into the strong light-matter coupling regime (SCR). The impact of excitonic disorder in low indium content (x???0.1) In{sub x}Ga{sub 1x}N/GaN MQW active regions is therefore investigated for the subsequent realization of polariton laser diodes by considering both simulations and optical characterizations. It allows deriving the requirements for such MQWs in terms of absorption, emission linewidth, and Stokes shift. Systematic absorption-like and photoluminescence (PL) spectroscopy experiments are performed on single and multiple In{sub 0.1}Ga{sub 0.9}N/GaN quantum wells (QWs). Micro-PL mappings reveal a low temperature PL linewidth of ?30?meV, compatible with SCR requirements, for single QWs for which the microscopic origin responsible for this broadening is qualitatively discussed. When stacking several InGaN/GaN QWs, a departure from such a narrow linewidth value and an increase in the Stokes shift are observed. Various possible reasons for this degradation such as inhomogeneous built-in field distribution among the QWs are then identified. An alternative solution for the MC design to achieve the SCR with the InGaN alloy is briefly discussed.

  3. Rapid Communications Strong piezoelectricity in individual GaN nanowires

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    Rapid Communications Strong piezoelectricity in individual GaN nanowires Majid Minary@northwestern.edu (Received 12 July 2011; accepted 15 September 2011) Abstract GaN nanowires are promising building blocks piezoelectricity in individual single-crystal GaN nanowires revealed by direct measurement of the piezoelectric

  4. GaN Radiation Detectors for Particle Physics and

    E-Print Network [OSTI]

    Glasgow, University of

    GaN Radiation Detectors for Particle Physics and Synchrotron Applications James Paul Grant and monitoring applications. Gallium nitride (GaN) was investigated as a radiation hard particle detector diameter on three epitaxial GaN wafers grown on a sapphire sub- strate. Two of the wafers were obtained

  5. New Faces of GaN: Growth, Doping and Devices

    E-Print Network [OSTI]

    California at Santa Barbara, University of

    New Faces of GaN: Growth, Doping and Devices James S. Speck Materials Department University of California Santa Barbara, CA LEO of a-GaN from circular opening Engineering Insights 2006 #12;#12;Personnel. Wraback (ARL) $$$ JST ERATO UCSB SSLDC AFOSR ONR #12;Reversed direction of polarization Bulk GaN

  6. SECONDARY MINERALS FOUND IN CORES DC2 Al AND DC2 TAKEN FROM THE GRANDE RONDE BASALT FORMATION, PASCO BASIN, WASHINGTON

    E-Print Network [OSTI]

    Teague, L.S.

    2010-01-01T23:59:59.000Z

    of secondary and primary mineral phases in basalts of theB. , 1975. Perched silia minerals on mordenite fibers. Jour.lt;. UC70 I SECONDARY MINERALS FOUND IN CORES DC2 AI AND

  7. Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

    SciTech Connect (OSTI)

    Perez-Tomas, A.; Fontsere, A.; Llobet, J. [IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, CAT (Spain); Placidi, M. [IREC, Jardins Dones de Negre 1, 08930 Sant Adria de Besos, Barcelona (Spain); Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Baron, N. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); PICOGIGA International, Pl M. Rebuffat, Courtaboeuf 7, 91140 Villejust (France)

    2013-05-07T23:59:59.000Z

    The vertical bulk (drain-bulk) current (I{sub db}) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I{sub db} (25-300 Degree-Sign C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E{sub a}), the (soft or destructive) vertical breakdown voltage (V{sub B}), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E{sub a} = 0.35 eV at T = 25-300 Degree-Sign C; V{sub B} = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E{sub a} = 2.5 eV at T > 265 Degree-Sign C; V{sub B} > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E{sub a} = 0.35 eV at T > 150 Degree-Sign C; V{sub B} = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

  8. A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+

    E-Print Network [OSTI]

    McKittrick, Joanna

    A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

  9. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

    E-Print Network [OSTI]

    improve the room-temperature carrier mobility in wurtzite AlN/GaN/AlN heterostructures, which is limited consider a narrow groove made of InxGa1-xN with small In content x inside a wurtzite AlN/GaN/AlN heteroN 2 nm /GaN 3 nm /AlN 3 nm . A well-known feature of wurtzite heterostructures is a strong buit

  10. Growth of GaN on porous SiC and GaN substrates C. K. Inoki1

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Growth of GaN on porous SiC and GaN substrates C. K. Inoki1 , T. S. Kuan1 , Ashutosh Sagar2 , C, Albuquerque, NM 87185 4 Beckman Institute, University of Illinois, Urbana, IL 61801 GaN films were grown on porous SiC and GaN templates using both plasma-assisted molecular beam epitaxy (PAMBE) and metal

  11. Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer

    E-Print Network [OSTI]

    Ozbay, Ekmel

    N buffer layer BL grown on an Al2O3 substrate and an AlN IL grown under the AlGaN ternary layer TL. In the present study, we investigate the effects of an AlN BL on an Al2O3 substrate and an AlN IL between an AlGaNStructural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer

  12. DC H2O: What's on Tap? Annual Progress Report for FY 2004

    E-Print Network [OSTI]

    District of Columbia, University of the

    for distributing treated water to DC residents has taken the brunt of the blame and has developed mechanisms. Project resources have secured a GPS unit and additional resources have already been allocated for GIS as a part of the 4-H Youth Cyber Camp. And as such, will incorporate the technological aspects of the DC H2O

  13. Towards Building an Optimal Demand Response Framework for DC Distribution Networks

    E-Print Network [OSTI]

    Mohsenian-Rad, Hamed

    . There- fore, in this paper, the first steps are taken towards designing de- mand response programs, such as photovoltaic (PV) systems, batteries, and fuel cells, that are natively DC sources. H. MohsenianTowards Building an Optimal Demand Response Framework for DC Distribution Networks Hamed Mohsenian

  14. Smith, D.C., et al., 2000 ODP Technical Note 28

    E-Print Network [OSTI]

    Smith, D.C., et al., 2000 ODP Technical Note 28 METHODS FOR QUANTIFYING POTENTIAL MICROBIAL CONTAMINATION DURING DEEP OCEAN CORING 1,2 David C. Smith,3 Arthur J. Spivack,4 Martin R. Fisk,5 Shelley A that these contamination tests be routinely conducted when coring for microbiological studies. 1Smith, D.C., Spivack, A

  15. Genomic Plasticity Enables Phenotypic Variation of Pseudomonas syringae pv. tomato DC3000

    E-Print Network [OSTI]

    Myers, Chris

    Genomic Plasticity Enables Phenotypic Variation of Pseudomonas syringae pv. tomato DC3000 Zhongmeng of a genomic anomaly in the region of 4.7 to 4.9 Mb of the Pseudomonas syringae pv. tomato (Pst) DC3000 genome in P. syringae. Citation: Bao Z, Stodghill PV, Myers CR, Lam H, Wei H-L, et al. (2014) Genomic

  16. Zeroing Transformer's DC Current in Resonant Converters with No Series Capacitors

    E-Print Network [OSTI]

    Gertsman, Student Member, IEEE and Sam Ben-Yaakov ,Fellow, IEEE Power Electronics Laboratory Department: www.ee.bgu.ac.il/~pel Abstract - DC current unbalance in the windings of a transformer may initiate the transformer's DC current to zero by correcting the asymmetry of the drive. This balancing control

  17. Control of Parallel-Connected Bidirectional AC-DC Converters in Stationary Frame for Microgrid

    E-Print Network [OSTI]

    Teodorescu, Remus

    Sistemes Automtica i Informtica Industrial Universitat Politcnica de Catalunya Abstract. In this paper, parallel-connected bidirectional converters for AC and DC hybrid microgrid application energy sources [3-6]. A hybrid microgrid can be made up of distributed renewable source, AC and DC common

  18. The Data Center (DC) Genome project is a collaborative effort with Microsoft Research

    E-Print Network [OSTI]

    Amir, Yair

    that IT equipment needs abundant cooling to operate reliably, the CRAC systems in many data centers are set to very, Project Genome: Wireless Sensor Network for Data Center Cooling , The Architecture Journal volume 18, 2009DC Genome The Data Center (DC) Genome project is a collaborative effort with Microsoft Research

  19. PID Control with Derivative Filtering Integral Anti-Windup for a DC Servo

    E-Print Network [OSTI]

    PID Control with Derivative Filtering and Integral Anti-Windup for a DC Servo Nicanor Quijano in the prelab for PID controllers. For that, we use the DC motor for the SRV-02ET to do position control. You . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2.4 PID Controller with Derivative Filtering

  20. Supervisory Control of an Adaptive-Droop Regulated DC Microgrid with Battery Management

    E-Print Network [OSTI]

    Vasquez, Juan Carlos

    such as photovoltaic (PV) systems and secondary batteries. In this paper, several distributed generators (DGs) have1 Supervisory Control of an Adaptive-Droop Regulated DC Microgrid with Battery Management been merged together with a pair of batteries and loads to form an autonomous dc Microgrid (MG

  1. A nonlinear robust HVDC control for a parallel AC/DC power system

    E-Print Network [OSTI]

    Qu, Zhihua

    A nonlinear robust HVDC control for a parallel AC/DC power system Hongzhi Cai a , Zhihua Qu b. Keywords: Robust control; HVDC; Power system; Stability; Lyapunov method 1. Introduction It has been recognized that, through an HVDC transmission line, fast electronic control can be applied on the DC power

  2. CTMCONTROL: Addressing the MC/DC Objective for Safety-Critical Automotive Software

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    CTMCONTROL: Addressing the MC/DC Objective for Safety-Critical Automotive Software Anila Mjeda.mjeda,mike.hinchey}@lero.ie Abstract. We propose a method tailored to the requirements of safety-critical embedded automotive software/DC) objective for automotive safety-critical software. CTMCONTROL is validated via a controlled experiment which

  3. Fabrication of Superhydrophobic Fiber Coatings by DC-Biased AC-Electrospinning

    E-Print Network [OSTI]

    Tafreshi, Hooman Vahedi

    Fabrication of Superhydrophobic Fiber Coatings by DC-Biased AC-Electrospinning Fredrick O. Ochanda DC-biased AC-electrospinning. Superhydrophobic surfaces with water contact angles greater than 150 on superhydrophobicity. VC 2011 Wiley Periodicals, Inc. J Appl Polym Sci 123: 11121119, 2012 Key words: superhydrophobic

  4. Fabrication of Superhydrophobic Fiber Coatings by DC-Biased AC-Electrospinning

    E-Print Network [OSTI]

    Tafreshi, Hooman Vahedi

    Fabrication of Superhydrophobic Fiber Coatings by DC-Biased AC-Electrospinning Fredrick O. Ochanda DC-biased AC-electrospinning. Superhydrophobic surfaces with water contact angles greater than 150 Superhydrophobicity is achieved by combining nano- or microscale roughness with a low-surface free energy material

  5. From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

    SciTech Connect (OSTI)

    Fisichella, G. [CNR-IMM, Strada VIII, 5, 95121 Catania (Italy); Department of Electronic Engineering, University of Catania, 95124 Catania (Italy); Greco, G.; Roccaforte, F.; Giannazzo, F. [CNR-IMM, Strada VIII, 5, 95121 Catania (Italy)

    2014-08-11T23:59:59.000Z

    The electrical behaviour of graphene (Gr) contacts to Al{sub x}Ga{sub 1?x}N/GaN heterostructures has been investigated, focusing, in particular, on the impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface. Two Al{sub 0.25}Ga{sub 0.75}N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, as evaluated by atomic force microscopy (AFM) and transmission electron microscopy, were compared in this study, i.e., a uniform and defect-free sample and a sample with a high density of typical V-defects, which locally cause a reduction of the AlGaN thickness. Nanoscale resolution current voltage (I-V) measurements by an Au coated conductive AFM tip were carried out at several positions both on the bare and Gr-coated AlGaN surfaces. Rectifying contacts were found onto both bare AlGaN surfaces, but with a more inhomogeneous and lower Schottky barrier height (?{sub B}???0.6?eV) for AlGaN with V-defects, with respect to the case of the uniform AlGaN (?{sub B}???0.9?eV). Instead, very different electrical behaviours were observed in the presence of the Gr interlayer between the Au tip and AlGaN, i.e., a Schottky contact with reduced barrier height (?{sub B} ? 0.4?eV) for the uniform AlGaN and an Ohmic contact for the AlGaN with V-defects. Interestingly, excellent lateral uniformity of the local I-V characteristics was found in both cases and can be ascribed to an averaging effect of the Gr electrode over the AlGaN interfacial inhomogeneities. Due to the locally reduced AlGaN layer thickness, V defect act as preferential current paths from Gr to the 2DEG and can account for the peculiar Ohmic behaviour of Gr contacts on defective AlGaN.

  6. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01T23:59:59.000Z

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  7. X-ray diffraction analysis of InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition

    SciTech Connect (OSTI)

    Nittono, T.; Hyuga, F. [NTT System Electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01 (Japan)] [NTT System Electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01 (Japan)

    1997-03-01T23:59:59.000Z

    InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition have been characterized by a high-resolution x-ray diffraction analysis of multiple quantum well structures. The flow of AsH{sub 3} to InGaP surface produces an InGaAs-like interfacial layer at the GaAs-on-InGaP interface, indicating P atoms of the InGaP surface are easily replaced by As atoms. The flow of PH{sub 3} to GaAs surface, on the other hand, does not make any detectable interfacial layer, indicating that almost no As atoms of the GaAs surface are replaced by P atoms. It is also found that the flow of trimethylgallium (TMG) to the InGaP surface produces a GaP-like interfacial layer. This interfacial layer is probably formed by the reaction between TMG and excessive P atoms on the InGaP surface or residual PH{sub 3} in the growth chamber. {copyright} {ital 1997 American Institute of Physics.}

  8. Physica B 376377 (2006) 486490 Preferential substitution of Fe on physically equivalent Ga sites in GaN

    E-Print Network [OSTI]

    Nabben, Reinhard

    2006-01-01T23:59:59.000Z

    in GaN W. Gehlhoff, D. Azamat1 , U. Haboeck, A. Hoffmann Institute for Solid State Physics, Technical freestanding hydride vapor phase grown GaN have been studied in the X- and Q-band. A complex resonance pattern with C3v symmetry in the wurtzite structure of GaN. Aside from the displacement of their magnetic axis

  9. Superluminescence in Green Emission GaInN/GaN Quantum Well Structures under Pulsed Laser Excitation

    E-Print Network [OSTI]

    Wetzel, Christian M.

    and bulk GaN substrates, respectively. Under intense pulsed photo excitation, we observed strong the same excitation conditions, the blue shift for the m-axis grown structure on bulk GaN substrate is less-plane sapphire substrate and along the non-polar m-axis on m-plane bulk GaN substrate. The frequently used

  10. Composition and Interface Analysis of InGaN/GaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography

    SciTech Connect (OSTI)

    Liu, Fang; Huang, Li; Davis, Robert F.; Porter, Lisa M.; Schreiber, Daniel K.; Kuchibhatla, S. V. N. T.; Shutthanandan, V.; Thevuthasan, Suntharampillai; Preble, Edward; Paskova, Tanya; Evans, K. R.

    2014-09-04T23:59:59.000Z

    In0.20Ga0.80N/GaN multi-quantum wells grown on [0001]-oriented GaN substrates with and without an InGaN buffer layer were characterized using three-dimensional atom probe tomography. In all samples, the upper interfaces of the QWs were slightly more diffuse than the lower interfaces. The buffer layers did not affect the roughness of the interfaces within the quantum well structure, a result attributed to planarization of the surface of the 1st GaN barrier layer which had an average root-mean-square roughness of 0.177 nm. The In and Ga distributions within the MQWs followed the expected distributions for a random alloy with no indications of In clustering.

  11. Dynamics of Three-Dimensional Vesicles in DC Electric fields

    E-Print Network [OSTI]

    Ebrahim M. Kolahdouz; David Salac

    2015-03-02T23:59:59.000Z

    A numerical and systematic parameter study of three-dimensional vesicle electrohydrodynamics is presented to investigate the effects of different fluid and membrane properties. The dynamics of vesicles in the presence of DC electric fields is considered, both in the presence and absence of linear shear flow. For suspended vesicles it is shown that the conductivity ratio and viscosity ratio between the interior and exterior fluids, as well as the vesicle membrane capacitance, substantially affect the minimum electric field strength required to induce a full Prolate-Oblate-Prolate transition.In addition, there exists a critical electric field strength above which a vesicle will no longer tumble when exposed to linear shear flow.

  12. Possible temperature control DC switch effect between two superconductors

    E-Print Network [OSTI]

    Tian De Cao

    2011-08-11T23:59:59.000Z

    The lifetime of an electron pair could not be unlimited long, on the basis of this, we suggest a model. The model means that the movements of charge carriers in a superconductor should have three forms: the single-electron movement, the single-pair movement, and the revolving around the mass center of two electrons in a pair. Thus the current in a superconductor has three possible parts. Similarly, there should be three possible effects in a SIS junction: the tunneling of single electron, the tunneling of single pair, and the pair-forming following the pair-breaking. This paper will discuss these problems and present a possible temperature control DC switch effect between two superconductors.

  13. Generating expansion model incorporating compact DC power flow equations

    SciTech Connect (OSTI)

    Nderitu, D.G.; Sparrow, F.T.; Yu, Z. [Purdue Inst. for Interdisciplinary Engineering Studies, West Lafayette, IN (United States)

    1998-12-31T23:59:59.000Z

    This paper presents a compact method of incorporating the spatial dimension into the generation expansion problem. Compact DC power flow equations are used to provide real-power flow coordination equations. Using these equations the marginal contribution of a generator to th total system loss is formulated as a function of that generator`s output. Incorporating these flow equations directly into the MIP formulation of the generator expansion problem results in a model that captures a generator`s true net marginal cost, one that includes both the cost of generation and the cost of transport. This method contrasts with other methods that iterate between a generator expansion model and an optimal power flow model. The proposed model is very compact and has very good convergence performance. A case study with data from Kenya is used to provide a practical application to the model.

  14. Superconducting DC and RF Properties of Ingot Niobium

    SciTech Connect (OSTI)

    Pashupati Dhakal, Gianluigi Ciovati, Peter Kneisel, Ganapati Rao Myneni

    2011-07-01T23:59:59.000Z

    The thermal conductivity, DC magnetization and penetration depth of large-grain niobium hollow cylindrical rods fabricated from ingots, manufactured by CBMM subjected to chemical and heat treatment were measured. The results confirm the influence of chemical and heat-treatment processes on the superconducting properties, with no significant dependence on the impurity concentrations in the original ingots. Furthermore, RF properties, such as the surface resistance and quench field of the niobium rods were measured using a TE{sub 011} cavity. The hollow niobium rod is the center conductor of this cavity, converting it to a coaxial cavity. The quench field is limited by the critical heat flux through the rods' cooling channel.

  15. Thermal cum DC Camouflage in Duet with Undecorated Natural Materials

    E-Print Network [OSTI]

    Yang, Tian-Zhi; Gao, Dongliang; Wu, Linzhi; Li, Baowen; Thong, John T L; Qiu, Cheng-Wei

    2015-01-01T23:59:59.000Z

    To manipulate various types of physical signals in one single device has long captivated the attention of scientists and engineers. This however is very challenging, if not impossible, even for emerging metamaterials. Up to date, many artificial materials have been proposed, theoretically and (or) experimentally, for manipulating various waves/signals on a one-function-one-device basis. In this work, for the very first time, we employ undecorated natural materials to experimentally demonstrate a simultaneous camouflage for thermal current and electric dc current on the same device. It demonstrates how ingenuity can overcome the limitations of natural material systems without the need for complex decoration to impart inhomogeneous and (or) anisotropic properties, which was previously considered impossible to accomplish except by using metamaterials.

  16. Discharging a DC bus capacitor of an electrical converter system

    DOE Patents [OSTI]

    Kajouke, Lateef A; Perisic, Milun; Ransom, Ray M

    2014-10-14T23:59:59.000Z

    A system and method of discharging a bus capacitor of a bidirectional matrix converter of a vehicle are presented here. The method begins by electrically shorting the AC interface of the converter after an AC energy source is disconnected from the AC interface. The method continues by arranging a plurality of switching elements of a second energy conversion module into a discharge configuration to establish an electrical current path from a first terminal of an isolation module, through an inductive element, and to a second terminal of the isolation module. The method also modulates a plurality of switching elements of a first energy conversion module, while maintaining the discharge configuration of the second energy conversion module, to at least partially discharge a DC bus capacitor.

  17. Point defect balance in epitaxial GaSb

    SciTech Connect (OSTI)

    Segercrantz, N., E-mail: natalie.segercrantz@aalto.fi; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland); Song, Y.; Wang, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gteborg (Sweden); State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 (China)

    2014-08-25T23:59:59.000Z

    Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the ptype conductivity is caused by different defects in GaSb grown with different methods.

  18. Room-temperature cw operation of InGaAsP/InGaP lasers at 727 nm grown on GaAs substrates by liquid phase epitaxy

    SciTech Connect (OSTI)

    Wakao, K.; Nishi, H.; Kusunoki, T.; Isozumi, S.; Ohsaka, S.

    1984-06-01T23:59:59.000Z

    InGaAsP/InGaP lasers emitting at 724--727 nm have been fabricated on GaAs substrates using liquid phase epitaxy. The threshold current is reduced to 8 kA/cm/sup 2/ by thinning the active layer. Room-temperature cw operation is achieved for the first time in the lasing wavelength range below 760 nm in this quaternary system.

  19. Self-assembled In0.5Ga0.5As quantum dots on GaP Yuncheng Song,a

    E-Print Network [OSTI]

    Haller, Gary L.

    SAQDs . Several groups have investigated the growth of both InP and In-rich InGaP SAQDs on GaP.712 Most temperature operation of vis- ible light emitting diodes LEDs using InP/GaP and InGaP/ GaP SAQDs, respectively

  20. Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns

    E-Print Network [OSTI]

    Jahns, Jrgen

    Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J spreading in a mesa-structure GaN-based LED grown on an insulating or semi-insulating substrate. (b. Jahns Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating

  1. Gas-source molecular beam epitaxial growth and characterization of the (Al,In,Ga)NP/GaP material system and Its applications to light-emitting diodes

    E-Print Network [OSTI]

    Odnoblyudov, Vladimir

    2006-01-01T23:59:59.000Z

    ? G, Kcal/mol GaP GaN AlN o Substrate temperature, C Figurenm-thick GaN 0.006 P 0.994 layer on substrate temperature.substrate temperature for Reactions formation of AlP, GaP, GaN and

  2. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 51, NO. 2, FEBRUARY 2003 653 AlGaN/GaN HFET Power Amplifier Integrated With

    E-Print Network [OSTI]

    Itoh, Tatsuo

    the first demonstration of a GaN-based HFET was done on a sapphire substrate in 1993 [1][3]. This is due crystal quality compared to that of the sapphire substrate. Thanks to steadfast progress in AlGaN/GaN HFETIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 51, NO. 2, FEBRUARY 2003 653 AlGaN/GaN

  3. Tunable THz plasmon resonances in InGaAs/InP HEMT R. E. Peale*a

    E-Print Network [OSTI]

    Peale, Robert E.

    , high ns, and small m*. A variety of materials systems such as GaAs/AlGaAs [3], InGaP/InGaAs/GaAs [4

  4. Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    fabricated on freestanding GaN substrates T. Koyama and T.on freestanding m-plane GaN substrates. Although the ? inton the freestanding GaN substrate. cause the current was

  5. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12T23:59:59.000Z

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  6. Influence of Ga content on the structure and anomalous Hall effect of Fe{sub 1?x}Ga{sub x} thin films on GaSb(100)

    SciTech Connect (OSTI)

    Anh Tuan, Duong; Shin, Yooleemi; Viet Cuong, Tran; Cho, Sunglae, E-mail: slcho@ulsan.ac.kr [Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Phan, The-Long [Department of Physics, Chungbuk National University, Cheongju 361-763 (Korea, Republic of)

    2014-05-07T23:59:59.000Z

    The Fe{sub 1?x}Ga{sub x} thin films (x?=?0.4, 0.5) have been grown on GaSb(100) substrate using molecular beam epitaxy. An epitaxial film with bcc ?-Fe crystal structure (A2) is observed in Fe{sub 0.6}Ga{sub 0.4} film, while an impure Fe{sub 3}Ga phase with DO{sub 3} structure is appeared in Fe{sub 0.5}Ga{sub 0.5} film. The saturated magnetizations at room temperature are observed to be 570?emu/cm{sup 3} and 180?emu/cm{sup 3} and the coercivities to be 170 and 364?Oe for Fe{sub 0.6}Ga{sub 0.4} and Fe{sub 0.5}Ga{sub 0.5}, respectively. A hysteresis trend in Hall resistance vs. magnetic field is observed for Fe{sub 0.5}Ga{sub 0.5} film. However, there is a weak hysteresis noticed in Fe{sub 0.4}Ga{sub 0.6} thin film.

  7. Catastrophic degradation of InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy

    SciTech Connect (OSTI)

    Ueda, O.; Wakao, K.; Komiya, S.; Yamaguchi, A.; Isozumi, S.; Umebu, I.

    1985-12-01T23:59:59.000Z

    Catastrophically degraded InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy, emitting at 727 and 810 nm are investigated by photoluminescence topography, scanning electron microscopy, transmission electron microscopy, and energy dispersive x-ray spectroscopy. The degradation is mainly due to catastrophic optical damage at the facet, i.e., development of <110> dark-line defects from the facet, and rarely due to catastrophic optical damage at some defects, i.e., development of <110> dark-line defects from the defects inside the stripe region. These <110> dark-line defects correspond to complicated dislocation networks connected with dark knots, and are quite similar to those observed in catastrophically degraded GaAlAs/GaAs double-heterostructure lasers. The degradation characteristics of the InGaAsP/InGaP double-heterostructure lasers are rather similar to those in GaAlAs/GaAs double-heterostructure lasers concerning the catastrophic degradation.

  8. Reduction of DC-link Capacitor in Case of Cascade Multilevel Converters by means of Reactive Power

    E-Print Network [OSTI]

    Teodorescu, Remus

    to integrate wind generator to multi- terminal dc collection network are few such examples. The basic block

  9. Dynamics of thermalization in GaInN/GaN quantum wells grown on ammonothermal GaN

    SciTech Connect (OSTI)

    Binder, J.; Korona, K. P.; Wysmo?ek, A.; Kami?ska, M. [Faculty of Physics, University of Warsaw, ul. Hoza 69, 00-681 Warsaw (Poland); Khler, K.; Kirste, L.; Ambacher, O. [Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg (Germany); Zaj?c, M.; Dwili?ski, R. [AMMONO SA, Czerwonego Krzy?a 2/31, 00-377 Warsaw (Poland)

    2013-12-14T23:59:59.000Z

    In this work, we present measurements of the dynamics of photoexcited carriers in GaInN/GaN quantum wells (QWs) grown on ammonothermal GaN, especially thermalization and recombination rates. Emission properties were measured by time-resolved photoluminescence (PL) and electroluminescence spectroscopy. Due to the use of high quality homoepitaxial material, we were able to obtain very valuable data on carrier thermalization. The temperature dependence of the QW energy observed in PL shows characteristic S-shape with a step of about 10?meV. Such a behavior (related to thermalization and localization at potential fluctuations) is often reported for QWs; but in our samples, the effect is smaller than in heteroepitaxial InGaN/GaN QWs due to lower potential fluctuation in our material. Absorption properties were studied by photocurrent spectroscopy measurements. A comparison of emission and absorption spectra revealed a shift in energy of about 60?meV. Contrary to PL, the QW energy observed in absorption decreases monotonically with temperature, which can be described by a Bose-like dependence E(T)?=?E(0) ? ?/(exp(?/T) ? 1), with parameters ??=?(0.11??0.01) eV, ??=?(355??20)?K, or by a Varshni dependence with coefficients ??=?(10??3) 10{sup ?4}?eV/K and ??=?(1500??500) K. Taking into account absorption and emission, the fluctuation amplitude (according to Eliseev theory) was ??=?14?meV. The time resolved PL revealed that in a short period (<1?ns) after excitation, the PL peaks were broadened because of the thermal distribution of carriers. We interpreted this distribution in terms of quasi-temperature (T{sub q}) of the carriers. The initial T{sub q} was of the order of 500?K. The thermalization led to a fast decrease of T{sub q}. The obtained cooling time in the QW was ?{sub C}?=?0.3?ns, which was faster than the observed recombination time ?{sub R}?=?2.2?ns (at 4?K)

  10. Development of Low-Voltage and Large Current DC Power Supply with High-Frequency Transformer Coupling

    E-Print Network [OSTI]

    Fujimoto, Hiroshi

    Development of Low-Voltage and Large Current DC Power Supply with High-Frequency Transformer excellent performance. Keywords DC power supply, low-voltage and large-current, high-frequency transformer Iobe (MACOHO Co., Ltd.) Abstract This paper describes low-voltage and large-current DC power supplies

  11. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure

    SciTech Connect (OSTI)

    Barbosa, B. G.; Arakaki, H.; Souza, C. A. de; Pusep, Yu. A. [Instituto de Fisica de So Carlos, Universidade de So Paulo, 13560-970 Sao Carlos, SP (Brazil)

    2014-03-21T23:59:59.000Z

    Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures. We demonstrated that manipulation of the emission energy may be achieved by appropriate choice of the shell structure. The emission at highest energy is generated in the NWs with tunneling thin AlGaAs inner shell and thin GaAs outer shell due to recombination of the photoexcited electrons confined in the outer shell with the holes in the core. Lower energy emission was shown to occur in the NWs with thick outer shell grown in the form of a short-period GaAs/AlGaAs multiple quantum well structure. In this case, the tunneling probability through the multiple quantum wells controls the energy emitted by the NWs. The doping of core results in dominated low energy emission from the GaAs core.

  12. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01T23:59:59.000Z

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  13. Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and reflection high-energy electron diffraction

    E-Print Network [OSTI]

    Brown, J S; Koblmuller, G; Wu, F; Averbeck, R; Riechert, H; Speck, J S

    2006-01-01T23:59:59.000Z

    PA-MBE GaN growth conditions, with substrate temperatures ofthe GaN surface roughness evolution, substrate vicinality,vapor and substrate temperature could form the basis for GaN

  14. Table 1 -ESTIMATED REDUCTION IN 1985 COTTON YIELDS RESULTING FROM INSECTDAMAGE TOTAL YIELD 13,622 bales INSECTS Loss in AL AZ AR CA FL GA LA MS MO NM NC OK SC TN TX VA No.

    E-Print Network [OSTI]

    Ray, David

    Average cost for all states nTotal yield for all states o Total acres for all states *Does not include BWE cost

  15. Refractive index of erbium doped GaN thin films

    SciTech Connect (OSTI)

    Alajlouni, S.; Sun, Z. Y.; Li, J.; Lin, J. Y.; Jiang, H. X., E-mail: hx.jiang@ttu.edu [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States); Zavada, J. M. [Department of Electrical and Computer Engineering, Polytechnic Institute of New York University, Brooklyn, New York 11201 (United States)

    2014-08-25T23:59:59.000Z

    GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540?nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300?arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers and represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540?nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.

  16. Impact of quasi-dc currents on three-phase distribution transformer installations

    SciTech Connect (OSTI)

    McConnell, B.W.; Barnes, P.R. (Oak Ridge National Lab., TN (United States)); Tesche, F.M. (Tesche (F.M.), Dallas, TX (United States)); Schafer, D.A. (Mission Research Corp., Albuquerque, NM (United States))

    1992-06-01T23:59:59.000Z

    This report summarizes a series of tests designed to determine the response of quasi-dc currents on three-phase power distribution transformers for electric power systems. In general, if the dc injection is limited to the primary side of a step-down transformer, significant harmonic distortion is noted and an increase in the reactive power demand results. For dc injection on the secondary (load) side of the step-down transformer the harmonic content at the secondary side is quite high and saturation occurs with a relatively low level of dc injection; however, the reactive power demand is significantly lower. These tests produced no apparent damage to the transformers. Transformer damage is dependent on the duration of the dc excitation, the level of the excitation, and on thermal characteristics of the transfer. The transformer response time is found to be much shorter than seen in power transformer tests at lower dc injection levels. This shorter response time suggests that the response time is strongly dependent on the injected current levels, and that higher levels of dc injection for shorter durations could produce very high reactive power demands and harmonic distortion within a few tenths of a second. The added reactive power load could result in the blowing of fuses on the primary side of the transformer for even moderate dc injection levels, and neutral currents are quite large under even low-level dc injection. This smoking neutral'' results in high-level harmonic injection into equipment via the neutral and in possible equipment failure.

  17. Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors

    SciTech Connect (OSTI)

    Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

    1998-10-14T23:59:59.000Z

    GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

  18. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-05-26T23:59:59.000Z

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  19. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Carrington, P. J.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

    2014-01-07T23:59:59.000Z

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  20. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

    2014-02-03T23:59:59.000Z

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.