National Library of Energy BETA

Sample records for dc fl ga

  1. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; et al

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersionmore » observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

  2. Characterization of the CEBAF 100 kV DC GaAs Photoelectron Gun Vacuum System

    SciTech Connect (OSTI)

    M.L. Stutzman; P. Adderley; J. Brittian; J. Clark; J. Grames; J. Hansknecht; G.R. Myneni; M. Poelker

    2007-05-01

    A vacuum system with pressure in the low ultra-high vacuum (UHV) range is essential for long photocathode lifetimes in DC high voltage GaAs photoguns. A discrepancy between predicted and measured base pressure in the CEBAF photoguns motivated this study of outgassing rates of three 304 stainless steel chambers with different pretreatments and pump speed measurements of non-evaporable getter (NEG) pumps. Outgassing rates were measured using two independent techniques. Lower outgassing rates were achieved by electropolishing and vacuum firing the chamber. The second part of the paper describes NEG pump speed measurements as a function of pressure through the lower part of the UHV range. Measured NEG pump speed is high at pressures above 510^?11 Torr, but may decrease at lower pressures depending on the interpretation of the data. The final section investigates the pump speed of a locally produced NEG coating applied to the vacuum chamber walls. These studies represent the first detailed vacuum measurements of CEBAF photogun vacuum chambers.

  3. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  4. Charge and fluence lifetime measurements of a dc high voltage GaAs photogun at high average current

    SciTech Connect (OSTI)

    J. Grames, R. Suleiman, P.A. Adderley, J. Clark, J. Hansknecht, D. Machie, M. Poelker, M.L. Stutzman

    2011-04-01

    GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, and (d) by applying a relatively low bias voltage to the anode to repel ions created within the downstream beam line. A combination of these techniques provided the best total charge extracted lifetimes in excess of 1000 C at dc beam currents up to 9.5 mA, using green light illumination of bulk GaAs inside a 100 kV photogun.

  5. Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing

    SciTech Connect (OSTI)

    Kim, Byung-Jae; Hwang, Ya-Hsi; Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Lu, Liu; Ren, Fan; Holzworth, M. R.; Jones, Kevin S.; Pearton, Stephen J.; Smith, David J.; Kim, Jihyun; Zhang, Ming-Lan

    2015-04-13

    The recovery effects of thermal annealing on dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors were investigated. After stress, reverse gate leakage current and sub-threshold swing increased and drain current on-off ratio decreased. However, these degradations were completely recovered after thermal annealing at 450?C for 10 mins for devices stressed either once or twice. The trap densities, which were estimated by temperature-dependent drain-current sub-threshold swing measurements, increased after off-state step-stress and were reduced after subsequent thermal annealing. In addition, the small signal rf characteristics of stressed devices were completely recovered after thermal annealing.

  6. FL J. Smith, Jr.

    Office of Legacy Management (LM)

    ct. B. Duillap (THPJJs L. Kassel) FL J. Smith, Jr. c c Kelley from R. 1. Cook, Kslley from R. 1. Cook, J J cit cit In accordawe with Secret memorandum dated October , 1951 ta IA. ...

  7. Vision FL LLC | Open Energy Information

    Open Energy Info (EERE)

    FL LLC Jump to: navigation, search Name: VisionFL, LLC Place: Florida Sector: Biomass Product: Florida-based biomass project developer. References: VisionFL, LLC1 This article...

  8. US SoAtl FL Site Consumption

    U.S. Energy Information Administration (EIA) Indexed Site

    FL Site Consumption kilowatthours 0 500 1,000 1,500 2,000 US SoAtl FL Expenditures dollars ELECTRICITY ONLY ... CONSUMPTION BY END USE More than a quarter (27%) of the ...

  9. Category:Miami, FL | Open Energy Information

    Open Energy Info (EERE)

    are in this category, out of 16 total. SVFullServiceRestaurant Miami FL Florida Power & Light Co..png SVFullServiceRestauran... 77 KB SVHospital Miami FL Florida Power & Light...

  10. Category:Tampa, FL | Open Energy Information

    Open Energy Info (EERE)

    are in this category, out of 16 total. SVFullServiceRestaurant Tampa FL Florida Power & Light Co..png SVFullServiceRestauran... 77 KB SVHospital Tampa FL Florida Power & Light...

  11. US SoAtl FL Site Consumption

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    FL Site Consumption million Btu 0 500 1,000 1,500 2,000 2,500 US SoAtl FL ... 8,000 12,000 16,000 US SoAtl FL Site Consumption kilowatthours 0 500 1,000 1,500 ...

  12. DOE - Office of Legacy Management -- University of Florida - FL 09

    Office of Legacy Management (LM)

    Florida - FL 09 FUSRAP Considered Sites Site: UNIVERSITY OF FLORIDA (FL.09) Eliminated from consideration under FUSRAP - Referred to NRC Designated Name: Not Designated Alternate Name: None Location: Gainesville , Florida FL.09-1 Evaluation Year: 1995 FL.09-1 Site Operations: Research and development using test quantities of radioactive metal. FL.09-2 Site Disposition: Eliminated - No Authority - NRC licensed FL.09-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Test

  13. DOE - Office of Legacy Management -- Humphreys Gold Co - FL 08

    Office of Legacy Management (LM)

    Humphreys Gold Co - FL 08 FUSRAP Considered Sites Site: Humphreys Gold Co. (FL.08 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Jacksonville , Florida FL.08-1 Evaluation Year: 1987 FL.08-2 FL.08-3 Site Operations: Processed monazite ore in the 1950s. FL.08-3 Site Disposition: Eliminated - No Authority - No AEC involvement at the site FL.08-2 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Thorium FL.08-1

  14. FL V1.3

    Energy Science and Technology Software Center (OSTI)

    2009-08-03

    A library of utility classes for computer vision. Contains implementations of various well-known image processing techniques, such as interest point operators and region descriptors. Includes interfaces to various libraries for image and video I/O, as well as an interface to LAPACK/BLAS. FL was developed at the University of Illinois, Urbana-Champaign (UIUC) and released under an open source license. Version 1.2 was a maintenance release provided by SNL under the LGPL license. Version 1.3 is amore » maintenance release, containing the following changes: - Improved image format handling. Now handles strided and planar memory layouts and a wider range of pixel formats. - Improved image file I/O, including better support for metadata, a wider range of stored pixel types, and a couple of new file formats. - Improvements to DOG and SIFT, and efficiency improvements in low-level convolution. - Improvements to networking, including a generic TCP listener. - Various improvements to numerical processing. The HISTORY file included in the distribution contains a more detailed description of the changes.« less

  15. WASHINGTON. DC.

    Office of Legacy Management (LM)

    WASHINGTON. DC. tzr.~Dfak nuf, Ama fall- II* 8. Atoalc l%mqy Camlealnn . . . . ,L:,. ' ,. 8ta loui Are0 offlaa " . . : ' ; ,.' ~. ._ ; . . ..!"C.. ,:. . . ..~.;~..?n:,.;,, ,_ ," .L,: ' ..: ' I I. P.O. Box 36 ,, ,,,,: ,.,.:... . . Brorarw Btotlrn . St. Louis, $105cnlr1 =- %A. WO. LB - FCA Fbn. A. Dfcklooa, V?,ao huralb$

  16. DOE - Office of Legacy Management -- Gardinier Inc - FL 05

    Office of Legacy Management (LM)

    Gardinier Inc - FL 05 FUSRAP Considered Sites Site: GARDINIER, INC. ( FL.05 ) Eliminated from consideration under FUSRAP - Referred to EPA and State of Florida Designated Name: Not Designated Alternate Name: U. S. Phosphoric Products FL.05-1 Location: Tampa , Florida FL.05-2 Evaluation Year: 1984 FL.05-3 Site Operations: U. S. Phosphoric Products constructed and operated a small scale pilot plant for uranium recovery; and Gardinier investigated a process for the recovery of by-product uranium

  17. S M Stoller Quarterly Sampling, STAR Center, Largo, FL

    Office of Legacy Management (LM)

    Quarterly Sampling, STAR Center, Largo, FL 7030-226 Accutest Job Number: F27229 Sampling Date: 10/07/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 *

  18. Bi-directional dc-dc Converter

    Broader source: Energy.gov [DOE]

    2009 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C.

  19. Bi-directional dc-dc Converter

    Broader source: Energy.gov [DOE]

    2010 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C.

  20. S M Stoller Quarterly Sampling, STAR Center, Largo, FL

    Office of Legacy Management (LM)

    0/06 Technical Report for S M Stoller Quarterly Sampling, STAR Center, Largo, FL 110406202 Accutest Job Number: F39137 Sampling Dates: 03/08/06 - 03/09/06 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast *

  1. S M Stoller Quarterly Sampling, STAR Center, Largo, FL

    Office of Legacy Management (LM)

    531 Sampling Date: 04/16/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results

  2. S M Stoller Quarterly Sampling, STAR Center, Largo, FL

    Office of Legacy Management (LM)

    2/04 Technical Report for S M Stoller Quarterly Sampling, STAR Center, Largo, FL 110406202 Accutest Job Number: F25409 Sampling Dates: 07/13/04 - 07/14/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast *

  3. S M Stoller Quarterly Sampling, STAR Center, Largo, FL

    Office of Legacy Management (LM)

    Quarterly Sampling, STAR Center, Largo, FL 110406202 Accutest Job Number: F33211 Sampling Dates: 07/13/05 - 07/14/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 *

  4. S M Stoller Star Center-WWNA Monthly; Largo, FL

    Office of Legacy Management (LM)

    7170 Sampling Date: 10/05/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test

  5. S M Stoller Star Center-WWNA Monthly; Largo, FL

    Office of Legacy Management (LM)

    6/04 Technical Report for S M Stoller Star Center-WWNA Monthly; Largo, FL 110406202 Accutest Job Number: F25242 Sampling Date: 07/06/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road *

  6. S M Stoller Monthly Sampling, STAR Center, Largo, FL

    Office of Legacy Management (LM)

    Sampling, STAR Center, Largo, FL 110406202 Accutest Job Number: F23261 Sampling Date: 04... Test results contained within this data package meet the requirements of the National ...

  7. S M Stoller Quarterly Sampling, STAR Center, Largo, FL

    Office of Legacy Management (LM)

    ... Technical Report for S M Stoller Quarterly Sampling, STAR Center, Largo, FL 110406202 Accutest Job Number: F23505 Sampling Dates: 041504 - 041604 Report to: S M Stoller ...

  8. Quantifying Fl Value of Hydro in Transmission Grid | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Quantifying Fl Value of Hydro in Transmission Grid 72hydrogridserviceseprikey.ppt (3.96 MB) More Documents & Publications Enviro effects of hydrokinetic turbines on fish ...

  9. DC source assemblies

    DOE Patents [OSTI]

    Campbell, Jeremy B; Newson, Steve

    2013-02-26

    Embodiments of DC source assemblies of power inverter systems of the type suitable for deployment in a vehicle having an electrically grounded chassis are provided. An embodiment of a DC source assembly comprises a housing, a DC source disposed within the housing, a first terminal, and a second terminal. The DC source also comprises a first capacitor having a first electrode electrically coupled to the housing, and a second electrode electrically coupled to the first terminal. The DC source assembly further comprises a second capacitor having a first electrode electrically coupled to the housing, and a second electrode electrically coupled to the second terminal.

  10. DOE - Office of Legacy Management -- University of Miami - FL 0-01

    Office of Legacy Management (LM)

    Miami - FL 0-01 FUSRAP Considered Sites Site: UNIVERSITY OF MIAMI (FL.0-01 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Miami , Florida FL.0-01-1 Evaluation Year: 1987 FL.0-01-1 Site Operations: Research. FL.0-01-1 Site Disposition: Eliminated - Potential for contamination considered remote based on nature of the operations FL.0-01-1 Radioactive Materials Handled: None Indicated Primary Radioactive Materials Handled: None Indicated

  11. Washington, DC.20585

    Office of Legacy Management (LM)

    Department of ,En&gy Washington, DC.20585 , ' . The Honorable Thomas, Murphy : ,, 414 Grant.Street Pittsburgh, Pennsylvania 15219 Dear Rayor Murphy:. Secretary of Energy ...

  12. S M Stoller Star Center-WWNA Monthly; Largo, FL

    Office of Legacy Management (LM)

    ... F25982 4 4.1 102504 Technical Report for S M Stoller Star Center-WWNA Monthly; Largo, FL 110406202 Accutest Job Number: F26616 Sampling Date: 090904 Report to: S M Stoller ...

  13. Multilevel DC link inverter

    DOE Patents [OSTI]

    Su, Gui-Jia

    2003-06-10

    A multilevel DC link inverter and method for improving torque response and current regulation in permanent magnet motors and switched reluctance motors having a low inductance includes a plurality of voltage controlled cells connected in series for applying a resulting dc voltage comprised of one or more incremental dc voltages. The cells are provided with switches for increasing the resulting applied dc voltage as speed and back EMF increase, while limiting the voltage that is applied to the commutation switches to perform PWM or dc voltage stepping functions, so as to limit current ripple in the stator windings below an acceptable level, typically 5%. Several embodiments are disclosed including inverters using IGBT's, inverters using thyristors. All of the inverters are operable in both motoring and regenerating modes.

  14. DOE - Office of Legacy Management -- Virginia-Carolina Chemical Corp - FL

    Office of Legacy Management (LM)

    06 Virginia-Carolina Chemical Corp - FL 06 FUSRAP Considered Sites Site: Virginia-Carolina Chemical Corp. (FL.06 ) Eliminated from consideration under FUSRAP - Referred to US EPA and State of Florida Designated Name: Not Designated Alternate Name: Conserv Corporation FL.06-1 Location: Nichols , Florida FL.06-2 Evaluation Year: 1985 FL.06-1 Site Operations: Process development studies and pilot plant testing of uranium recovery from phosphoric acid during the mid-1950s. Site Disposition:

  15. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19 }m{sup −2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  16. S M Stoller Star Center-WWNA Monthly; Largo, FL

    Office of Legacy Management (LM)

    ... F30885 4 4.1 F30885: Chain of Custody Page 2 of 2 18 of 18 F30885 4 4.1 071505 Technical Report for S M Stoller Star Center-WWNA Monthly; Largo, FL 7030-226 Accutest Job Number: ...

  17. S M Stoller Star Center-WWNA Monthly; Largo, FL

    Office of Legacy Management (LM)

    ... F28014 4 4.1 F28014: Chain of Custody Page 2 of 2 12 of 12 F28014 4 4.1 122704 Technical Report for S M Stoller Star Center-WWNA Monthly; Largo, FL 7030-226 Accutest Job Number: ...

  18. DC attenuation meter

    DOE Patents [OSTI]

    Hargrove, Douglas L.

    2004-09-14

    A portable, hand-held meter used to measure direct current (DC) attenuation in low impedance electrical signal cables and signal attenuators. A DC voltage is applied to the signal input of the cable and feedback to the control circuit through the signal cable and attenuators. The control circuit adjusts the applied voltage to the cable until the feedback voltage equals the reference voltage. The "units" of applied voltage required at the cable input is the system attenuation value of the cable and attenuators, which makes this meter unique. The meter may be used to calibrate data signal cables, attenuators, and cable-attenuator assemblies.

  19. DC arc weld starter

    DOE Patents [OSTI]

    Campiotti, Richard H. (Tracy, CA); Hopwood, James E. (Oakley, CA)

    1990-01-01

    A system for starting an arc for welding uses three DC power supplies, a high voltage supply for initiating the arc, an intermediate voltage supply for sustaining the arc, and a low voltage welding supply directly connected across the gap after the high voltage supply is disconnected.

  20. S M Stoller Monthly Sampling (Pinellas Co), STAR Center, Largo, FL

    Office of Legacy Management (LM)

    Sampling (Pinellas Co), STAR Center, Largo, FL 110406202 Accutest Job Number: F23259 Sampling Date: 04/06/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL

  1. S M Stoller STAR Center- 4.5 Acre Site, Largo, FL

    Office of Legacy Management (LM)

    STAR Center- 4.5 Acre Site, Largo, FL 7030-226/Monthly Accutest Job Number: F27168 Sampling Date: 10/05/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811

  2. S M Stoller STAR Center- 4.5 Acre Site, Largo, FL

    Office of Legacy Management (LM)

    STAR Center- 4.5 Acre Site, Largo, FL 110406202 Accutest Job Number: F23552 Sampling Date: 04/20/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel:

  3. S M Stoller STAR Center- 4.5 Acre Site, Largo, FL

    Office of Legacy Management (LM)

    STAR Center- 4.5 Acre Site, Largo, FL 110406202 Accutest Job Number: F25243 Sampling Date: 07/06/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel:

  4. S M Stoller Star Center-B100 Monthly/Effluent; Largo, FL

    Office of Legacy Management (LM)

    B100 Monthly/Effluent; Largo, FL 7030-226 Accutest Job Number: F30882 Sampling Date: 04/06/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel:

  5. S M Stoller Star Center-B100 Monthly/Effluent; Largo, FL

    Office of Legacy Management (LM)

    B100 Monthly/Effluent; Largo, FL 7030-226 Accutest Job Number: F29123 Sampling Date: 01/06/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel:

  6. I ' Washington, DC'

    Office of Legacy Management (LM)

    ' Washington, DC' 20585 The.Honorable Don Trotter, 102' Public Square Clarksville, Tennessee '37040 '_ _' ' Dear Mayor Trotter: '. Secretary of Energy Hazel .O'Leary has announced a new the Department of Energy (DOE) and its communications support of this initiative, we are pleased to forward related to the Clarksville Foundry.& Machine Co. site approach to openness in with the publ,ic'. In " the~enclosed~information in your'jurisdiction that performed work for DOE or its

  7. D.C.

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Future scientists advance to national level April 3, 2012 Science Bowl winners represent NM in Washington, D.C. A team from Los Alamos bested 39 other teams from around New Mexico in the 10- hour New Mexico Regional Science Bowl, held recently at Albuquerque Academy. The team went on to represent New Mexico in the 22nd Annual Department of Energy (DOE) National Science Bowl. In addition to their travel expenses, the team also won $5,000 for their school. The team consists of students, Alexander

  8. Auxiliary resonant DC tank converter

    DOE Patents [OSTI]

    Peng, Fang Z.

    2000-01-01

    An auxiliary resonant dc tank (ARDCT) converter is provided for achieving soft-switching in a power converter. An ARDCT circuit is coupled directly across a dc bus to the inverter to generate a resonant dc bus voltage, including upper and lower resonant capacitors connected in series as a resonant leg, first and second dc tank capacitors connected in series as a tank leg, and an auxiliary resonant circuit comprising a series combination of a resonant inductor and a pair of auxiliary switching devices. The ARDCT circuit further includes first clamping means for holding the resonant dc bus voltage to the dc tank voltage of the tank leg, and second clamping means for clamping the resonant dc bus voltage to zero during a resonant period. The ARDCT circuit resonantly brings the dc bus voltage to zero in order to provide a zero-voltage switching opportunity for the inverter, then quickly rebounds the dc bus voltage back to the dc tank voltage after the inverter changes state. The auxiliary switching devices are turned on and off under zero-current conditions. The ARDCT circuit only absorbs ripples of the inverter dc bus current, thus having less current stress. In addition, since the ARDCT circuit is coupled in parallel with the dc power supply and the inverter for merely assisting soft-switching of the inverter without participating in real dc power transmission and power conversion, malfunction and failure of the tank circuit will not affect the functional operation of the inverter; thus a highly reliable converter system is expected.

  9. Improved DC Gun Insulator

    SciTech Connect (OSTI)

    M.L. Neubauer, K.B. Beard, R. Sah, C. Hernandez-Garcia, G. Neil

    2009-05-01

    Many user facilities such as synchrotron light sources and free electron lasers require accelerating structures that support electric fields of 10-100 MV/m, especially at the start of the accelerator chain where ceramic insulators are used for very high gradient DC guns. These insulators are difficult to manufacture, require long commissioning times, and have poor reliability, in part because energetic electrons bury themselves in the ceramic, creating a buildup of charge and causing eventual puncture. A novel ceramic manufacturing process is proposed. It will incorporate bulk resistivity in the region where it is needed to bleed off accumulated charge caused by highly energetic electrons. This process will be optimized to provide an appropriate gradient in bulk resistivity from the vacuum side to the air side of the HV standoff ceramic cylinder. A computer model will be used to determine the optimum cylinder dimensions and required resistivity gradient for an example RF gun application. A ceramic material example with resistivity gradient appropriate for use as a DC gun insulator will be fabricated by glazing using doping compounds and tested.

  10. TRIBAL ISSUES TOPIC GROUP MEETING SUMMARY JACKSONVILLE, FL

    Office of Environmental Management (EM)

    JACKSONVILLE, FL JANUARY 20, 1999 Mr. Kevin Blackwell (USDOT/FRA) updated the group on the status of the DOT response to DOE's inquiry about the tribal right to inspect rail shipments. The response was in the final stages of review in the General Counsel's office and is expected by July 1999. The Group has added a representative from the NRC General Counsel's office, as a topic group member, to help keep abreast of developments in the NRC's upcoming draft rulemaking regarding tribes and advanced

  11. DC Wafers | Open Energy Information

    Open Energy Info (EERE)

    Wafers Jump to: navigation, search Name: DC Wafers Place: Leon, Spain Product: Spanish manufacturer of multicrystalline silicon wafers. Planning a 30MW wafer slicing line in Leon,...

  12. S M Stoller Star Center-B100 Monthly/Effluent; Largo, FL

    Office of Legacy Management (LM)

    1/06 Technical Report for S M Stoller Star Center-B100 Monthly/Effluent; Largo, FL 7031-226 Accutest Job Number: F37650 Sampling Date: 01/05/06 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland

  13. Triple voltage dc-to-dc converter and method

    DOE Patents [OSTI]

    Su, Gui-Jia

    2008-08-05

    A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

  14. Bi-Directional DC-DC Converter for PHEV Applications

    SciTech Connect (OSTI)

    Abas Goodarzi

    2011-01-31

    Plug-In Hybrid Electric Vehicles (PHEV) require high power density energy storage system (ESS) for hybrid operation and high energy density ESS for Electric Vehicle (EV) mode range. However, ESS technologies to maximize power density and energy density simultaneously are not commercially feasible. The use of bi-directional DC-DC converter allows use of multiple energy storage, and the flexible DC-link voltages can enhance the system efficiency and reduce component sizing. This will improve fuel consumption, increase the EV mode range, reduce the total weight, reduce battery initial and life cycle cost, and provide flexibility in system design.

  15. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  16. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  17. Washington DC | OpenEI Community

    Open Energy Info (EERE)

    DC Home Linked Open Data Workshop in Washington, D.C. Description: A group organizing the LOD workshop in Washington, D.C. in fall 2012 A follow-up event to the successful LOD...

  18. D.C. | OpenEI Community

    Open Energy Info (EERE)

    D.C. Home Kyoung's picture Submitted by Kyoung(150) Contributor 6 September, 2012 - 08:51 GRR Update Meeting scheduled for 913 in D.C. D.C. GRR meeting update The next Geothermal...

  19. Good Energies (Washington DC) | Open Energy Information

    Open Energy Info (EERE)

    Good Energies (Washington DC) Name: Good Energies (Washington DC) Address: 1250 24th St., NW, Suite 250 Place: Washington, District of Columbia Zip: 20037 Product: Global investor...

  20. DC Pro Software Tool Suite

    SciTech Connect (OSTI)

    2009-04-01

    This fact sheet describes how DOE's Data Center Energy Profiler (DC Pro) Software Tool Suite and other resources can help U.S. companies identify ways to improve the efficiency of their data centers.

  1. DOE Zero Energy Ready Home Case Study: e2 Homes, Winter Park, FL, Custom

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Homes | Department of Energy e2 Homes, Winter Park, FL, Custom Homes DOE Zero Energy Ready Home Case Study: e2 Homes, Winter Park, FL, Custom Homes Case study of a DOE Zero Energy Ready Home in Winter Park, FL, that scored HERS 57 without PV or HERS -7 with PV. This 4,305-square-foot custom home has autoclaved aerated concrete walls, a sealed attic with R-20 spray foam, and ductless mini-split heat pumps. DOE ZERH case study: e2 Homes (1.07 MB) More Documents & Publications Building

  2. Catalog of DC Appliances and Power Systems

    SciTech Connect (OSTI)

    Garbesi, Karina; Vossos, Vagelis; Shen, Hongxia

    2010-10-13

    This document catalogs the characteristics of current and potential future DC products and power systems.

  3. Performance Study of K2CsSb Photocathode inside a DC High Voltage Gun

    SciTech Connect (OSTI)

    T. Rao, J. Smedley, J.M. Grames, R. Mammei, J.L. McCarter, M. Poelker, R. Suleiman

    2011-03-01

    In the past decade, there has been considerable interest in the generation of tens of mA average current in a photoinjector. Until recently, GaAs:Cs cathodes and K2CsSb cathodes have been tested successfully in DC and RF injectors respectively for this application. Our goal is to test the GaAs:Cs in RF injector and the K2CsSb cathode in the DC gun in order to widen our choices. Since the multialkali cathode is a compound with uniform stochiometry over its entire thickness, we anticipate that the life time issues seen in GaAs:Cs due surface damage by ion bombardment would be minimized with this material. Hence successful operation of the K2CsSb cathode in DC gun could lead to a relatively robust electron source capable of delivering ampere level currents. In order to test the performance of K2CsSb cathode in a DC gun, we have designed and built a load lock system that would allow the fabrication of the cathode at BNL and its testing at JLab. In this paper, we will present the design of the load-lock system, cathode fabrication, and the cathode performance in the preparation chamber and in the DC gun.

  4. Light-weight DC to very high voltage DC converter

    DOE Patents [OSTI]

    Druce, Robert L.; Kirbie, Hugh C.; Newton, Mark A.

    1998-01-01

    A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current.

  5. Light-weight DC to very high voltage DC converter

    DOE Patents [OSTI]

    Druce, R.L.; Kirbie, H.C.; Newton, M.A.

    1998-06-30

    A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current. 1 fig.

  6. DOE Zero Energy Ready Home Case Study: Habitat for Humanity South Sarasota County, Nokomis, FL

    Broader source: Energy.gov [DOE]

    Case study of a DOE Zero Energy Ready affordable home in Nokomis, FL, achieves a HERS 51 without PV. The 1,290-ft2 1-story home has foam-filled concrete block walls, a sealed attic insulated under...

  7. File:USDA-CE-Production-GIFmaps-FL.pdf | Open Energy Information

    Open Energy Info (EERE)

    FL.pdf Jump to: navigation, search File File history File usage Florida Ethanol Plant Locations Size of this preview: 463 599 pixels. Other resolution: 464 600 pixels. Full...

  8. Switching coordination of distributed dc-dc converters for highly efficient photovoltaic power plants

    DOE Patents [OSTI]

    Agamy, Mohammed; Elasser, Ahmed; Sabate, Juan Antonio; Galbraith, Anthony William; Harfman Todorovic, Maja

    2014-09-09

    A distributed photovoltaic (PV) power plant includes a plurality of distributed dc-dc converters. The dc-dc converters are configured to switch in coordination with one another such that at least one dc-dc converter transfers power to a common dc-bus based upon the total system power available from one or more corresponding strings of PV modules. Due to the coordinated switching of the dc-dc converters, each dc-dc converter transferring power to the common dc-bus continues to operate within its optimal efficiency range as well as to optimize the maximum power point tracking in order to increase the energy yield of the PV power plant.

  9. DC to DC power converters and methods of controlling the same

    DOE Patents [OSTI]

    Steigerwald, Robert Louis; Elasser, Ahmed; Sabate, Juan Antonio; Todorovic, Maja Harfman; Agamy, Mohammed

    2012-12-11

    A power generation system configured to provide direct current (DC) power to a DC link is described. The system includes a first power generation unit configured to output DC power. The system also includes a first DC to DC converter comprising an input section and an output section. The output section of the first DC to DC converter is coupled in series with the first power generation unit. The first DC to DC converter is configured to process a first portion of the DC power output by the first power generation unit and to provide an unprocessed second portion of the DC power output of the first power generation unit to the output section.

  10. ARM - Campaign Instrument - dc8-nasa

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ...strumentsdc8-nasa Comments? We would love to hear from you Send us a note below or call us at 1-888-ARM-DATA. Send Campaign Instrument : NASA DC-8 (DC8-NASA) Instrument Categories ...

  11. What is the deal with DC Microgrids?

    Energy Savers [EERE]

    2015 Acuity Brands What is the deal with DC Microgrids? and why would a Lighting company care? Yan Rodriguez VP Product and Technology 2015 Acuity Brands * Why DC Microgrids? *...

  12. Ecological benefits of dc power transmission

    SciTech Connect (OSTI)

    Kutuzova, N. B.

    2011-05-15

    The environmental effects of dc overhead transmission lines are examined. The major effects of ac and dc transmission lines are compared. Dc lines have advantages compared to ac lines in terms of electrical safety for people under the lines, biological effects, corona losses, and clearance width.

  13. Performance Study of K2CsSb Photocathode Inside a DC High Voltage Gun

    SciTech Connect (OSTI)

    McCarter J. L.; Rao T.; Smedley, J.; Grames, J.; Mammei, R.; Poelker, M.; Suleiman, R.

    2011-09-01

    In the past decade, there has been considerable interest in the generation of tens of mA average current in a photoinjector. Until recently, GaAs:Cs cathodes and K{sub 2}CsSb cathodes have been tested successfully in DC and RF injectors respectively for this application. Our goal is to test the K{sub 2}CsSb photocathode inside a DC gun. Since the multialkali cathode is a compound with constant characteristics over its entire thickness, we anticipate that the lifetime issues seen in GaAs:Cs due to surface damage by ion bombardment would be minimized. Hence successful operation of the K{sub 2}CsSb cathode in a DC gun could lead to a relatively robust electron source capable of delivering ampere level currents. In order to test the performance of a K{sub 2}CsSb cathode in a DC gun, we have designed and built a load lock system that allows the fabrication of the cathode at Brookhaven National Lab (BNL) and its testing at Jefferson Lab (JLab). In this paper, we will present the performance of the K{sub 2}CsSb photocathode in the preparation chamber and in the DC gun.

  14. EA-377 DC Energy Texas LLC | Department of Energy

    Energy Savers [EERE]

    7 DC Energy Texas LLC EA-377 DC Energy Texas LLC Order authorizing DC Energy Texas LLC to export electric energy to Mexico. PDF icon EA-377 DC Energy Texas LLC More Documents & ...

  15. DOE - Office of Legacy Management -- Naval Research Laboratory - DC 02

    Office of Legacy Management (LM)

    Research Laboratory - DC 02 FUSRAP Considered Sites Site: NAVAL RESEARCH LABORATORY (DC.02 ) Eliminated from consideration under FUSRAP - Referred to DOD Designated Name: Not Designated Alternate Name: None Location: Washington , D.C. DC.02-4 Evaluation Year: 1987 DC.02-4 Site Operations: Research and development on thermal diffusion. DC.02-4 Site Disposition: Eliminated - No Authority - AEC licensed - Military facility DC.02-4 DC.02-1 Radioactive Materials Handled: Yes Primary Radioactive

  16. DOE Zero Energy Ready Home Case Study: Manatee County Habitat for Humanity, Ellenton, FL, Affordable

    Broader source: Energy.gov [DOE]

    Case study of a DOE Zero Energy Ready Home in Ellenton, FL, that scored HERS 53 without PV, HERS 23 with PV. This 1,143-square-foot affordable home has R-23 ICF walls, a spray-foamed sealed attic, solar hot water, and a ducted mini-split heat pump.

  17. DOE Zero Energy Ready Home Case Study: Southeast Volusia Habitat for Humanity, Edgewater, FL

    Broader source: Energy.gov [DOE]

    Case study of a DOE Zero Energy Ready affordable home in Edgewater, FL, that achieves a HERS score of 49 without PV. The one-story, 1,250-ft2 home has 2x4 walls with fiberglass batt inside plus R-3...

  18. DOE Zero Energy Ready Home Case Study: e2 Homes, Winter Park, FL, Custom Homes

    Broader source: Energy.gov [DOE]

    Case study of a DOE Zero Energy Ready Home in Winter Park, FL that scored HERS 57 without PV or HERS -7 with PV. This 4,305-square-foot custom home has autoclaved aerated concrete walls, a sealed attic with R-20 spray foam, and ductless mini-split heat pumps.

  19. St. Petersburg, FL: Vehicle Use of Recycled Natural Gas Derived from Wastewater Biosolids

    Broader source: Energy.gov [DOE]

    Breakout Session 3A—Conversion Technologies III: Energy from Our Waste—Will we Be Rich in Fuel or Knee Deep in Trash by 2025? St. Petersburg, FL: Vehicle Use of Recycled Natural Gas Derived from Wastewater Biosolids William Eleazer, Supervising Engineer, Brown and Caldwell

  20. SSL Demonstration: Parking Garage Lighting, Washington, DC

    SciTech Connect (OSTI)

    2013-06-01

    GATEWAY program report brief summarizing an SSL parking garage demonstration at the Dept. of Labor headquarters parking garage in Washington, DC.

  1. Glass Ceramic Dielectrics for DC Bus Capacitors

    Broader source: Energy.gov [DOE]

    2010 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C.

  2. Simultaneous distribution of AC and DC power

    SciTech Connect (OSTI)

    Polese, Luigi Gentile

    2015-09-15

    A system and method for the transport and distribution of both AC (alternating current) power and DC (direct current) power over wiring infrastructure normally used for distributing AC power only, for example, residential and/or commercial buildings' electrical wires is disclosed and taught. The system and method permits the combining of AC and DC power sources and the simultaneous distribution of the resulting power over the same wiring. At the utilization site a complementary device permits the separation of the DC power from the AC power and their reconstruction, for use in conventional AC-only and DC-only devices.

  3. High voltage DC power supply

    DOE Patents [OSTI]

    Droege, Thomas F.

    1989-01-01

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively.

  4. High voltage DC power supply

    DOE Patents [OSTI]

    Droege, T.F.

    1989-12-19

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively. 7 figs.

  5. DC-based magnetic field controller

    DOE Patents [OSTI]

    Kotter, Dale K.; Rankin, Richard A.; Morgan, John P,.

    1994-01-01

    A magnetic field controller for laboratory devices and in particular to dc operated magnetic field controllers for mass spectrometers, comprising a dc power supply in combination with improvements to a hall probe subsystem, display subsystem, preamplifier, field control subsystem, and an output stage.

  6. DC-based magnetic field controller

    DOE Patents [OSTI]

    Kotter, D.K.; Rankin, R.A.; Morgan, J.P.

    1994-05-31

    A magnetic field controller is described for laboratory devices and in particular to dc operated magnetic field controllers for mass spectrometers, comprising a dc power supply in combination with improvements to a Hall probe subsystem, display subsystem, preamplifier, field control subsystem, and an output stage. 1 fig.

  7. EA-351 DC Energy Dakota, LLC | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Order authorizing DC Energy Dakota, LLC to export electric energy to Canada EA-351 DC ... EA-351 DC Energy Dakota, LLC EA-344 Twin Cities Power-Canada, LLC EA-354 Endure Energy, ...

  8. Washington, D.C. Roundtable Summary | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Washington, D.C. Roundtable Summary Washington, D.C. Roundtable Summary Summary of the DOE Office of Indian Energy roundtable held March 30, 2011, in Washington, D.C. PDF icon ...

  9. EA-327-A DC Energy, LLC | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    DC Energy to export electric energy to Canada. EA-327-A DC Energy.pdf More Documents & Publications Application to Export Electric Energy OE Docket No. EA-327-A DC Energy, LLC...

  10. Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ahn, S.; Dong, C.; Zhu, W.; Kim, B. -j.; Hwang, Ya-Hsi; Ren, F.; Pearton, S. J.; Yang, Gwangseok; Kim, J.; Patrick, Erin; et al

    2015-08-18

    The effects of proton irradiation energy on dc characteristics of AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (MOSHEMTs) using Al2O3 as the gate dielectric were studied. Al2O3/AlGaN/GaN MOSHEMTs were irradiated with a fixed proton dose of 5 × 1015 cm-2 at different energies of 5, 10, or 15 MeV. More degradation of the device dc characteristics was observed for lower irradiation energy due to the larger amount of nonionizing energy loss in the active region of the MOSHEMTs under these conditions. The reductions in saturation current were 95.3%, 68.3%, and 59.8% and reductions in maximum transconductance were 88%, 54.4%, andmore » 40.7% after 5, 10, and 15 MeV proton irradiation, respectively. Both forward and reverse gate leakage current were reduced more than one order of magnitude after irradiation. The carrier removal rates for the irradiation energies employed in this study were in the range of 127–289 cm-1. These are similar to the values reported for conventional metal-gate high-electron mobility transistors under the same conditions and show that the gate dielectric does not affect the response to proton irradiation for these energies.« less

  11. Multilevel cascade voltage source inverter with seperate DC sources...

    Office of Scientific and Technical Information (OSTI)

    Multilevel cascade voltage source inverter with seperate DC sources Citation Details In-Document Search Title: Multilevel cascade voltage source inverter with seperate DC sources ...

  12. Multilevel cascade voltage source inverter with seperate DC sources...

    Office of Scientific and Technical Information (OSTI)

    Multilevel cascade voltage source inverter with seperate DC sources Citation Details In-Document Search Title: Multilevel cascade voltage source inverter with seperate DC sources A ...

  13. Washington, D.C. and Indiana: Allison Hybrid Technology Achieves...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Washington, D.C. and Indiana: Allison Hybrid Technology Achieves Commercial Success Washington, D.C. and Indiana: Allison Hybrid Technology Achieves Commercial Success August 21,...

  14. Low Cost, High Temperature, High Ripple Current DC Bus Capacitors...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Low Cost, High Temperature, High Ripple Current DC Bus Capacitors Low Cost, High Temperature, High Ripple Current DC Bus Capacitors 2010 DOE Vehicle Technologies and Hydrogen...

  15. AVTA: Battery Testing - DC Fast Charging's Effects on PEV Batteries...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Vehicle Testing Reports DC Fast Charge Impacts on Battery Life and Vehicle Performance INL Efficiency and Security Testing of EVSE, DC Fast Chargers, and Wireless Charging Systems

  16. INL Efficiency and Security Testing of EVSE, DC Fast Chargers...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    INL Efficiency and Security Testing of EVSE, DC Fast Chargers, and Wireless Charging Systems INL Efficiency and Security Testing of EVSE, DC Fast Chargers, and Wireless Charging ...

  17. Maryland DC Virginia Solar Energy Industries Association MDV...

    Open Energy Info (EERE)

    DC Virginia Solar Energy Industries Association MDV SEIA Jump to: navigation, search Name: Maryland-DC-Virginia Solar Energy Industries Association (MDV-SEIA) Place: Bethesda,...

  18. Report Now Available: DC Microgrids Scoping Study--Estimate of...

    Office of Environmental Management (EM)

    Report Now Available: DC Microgrids Scoping Study--Estimate of Technical and Economic Benefits (March 2015) Report Now Available: DC Microgrids Scoping Study--Estimate of Technical ...

  19. DC High School Science Bowl Regionals

    Broader source: Energy.gov [DOE]

    This event is the Washington, D.C. High School Regional competition for the US National Science Bowl. The regional competition is run by the Office of Economic Impact and Diversity, and the...

  20. Microsoft Word - ivanova-dc.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the large, small and very small modes (named here as mode 3, 2, and 1). Figure 7. Mean dimension measured by the 2DC vs. temperature for this study (CEPEX). Vertical bars are...

  1. 8798_FL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... of nanoscale systems requires ... While there are several types of fuel cells, proton exchange mem- brane (PEM) cells ... side of the fuel cell, a catalyst (usu- ...

  2. Improved DC Gun Insulator Assembly

    SciTech Connect (OSTI)

    Sah, R.; Dudas, A.; Neubauer, M. L.; Poelker, M.; Surles-Law, K. E.L.

    2010-05-23

    Many user fa­cil­i­ties such as syn­chrotron ra­di­a­tion light sources and free elec­tron lasers re­quire ac­cel­er­at­ing struc­tures that sup­port elec­tric fields of 10-100 MV/m, es­pe­cial­ly at the start of the ac­cel­er­a­tor chain where ce­ram­ic in­su­la­tors are used for very high gra­di­ent DC guns. These in­su­la­tors are dif­fi­cult to man­u­fac­ture, re­quire long com­mis­sion­ing times, and often ex­hib­it poor re­li­a­bil­i­ty. Two tech­ni­cal ap­proach­es to solv­ing this prob­lem will be in­ves­ti­gat­ed. First­ly, in­vert­ed ce­ram­ics offer so­lu­tions for re­duced gra­di­ents be­tween the elec­trodes and ground. An in­vert­ed de­sign will be pre­sent­ed for 350 kV, with max­i­mum gra­di­ents in the range of 5-10 MV/m. Sec­ond­ly, novel ce­ram­ic man­u­fac­tur­ing pro­cess­es will be stud­ied, in order to pro­tect triple junc­tion lo­ca­tions from emis­sion, by ap­ply­ing a coat­ing with a bulk re­sis­tiv­i­ty. The pro­cess­es for cre­at­ing this coat­ing will be op­ti­mized to pro­vide pro­tec­tion as well as be used to coat a ce­ram­ic with an ap­pro­pri­ate gra­di­ent in bulk re­sis­tiv­i­ty from the vac­u­um side to the air side of an HV stand­off ce­ram­ic cylin­der. Ex­am­ple in­su­la­tor de­signs are being com­put­er mod­elled, and in­su­la­tor sam­ples are being man­u­fac­tured and test­ed

  3. Testing a GaAs cathode in SRF gun

    SciTech Connect (OSTI)

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-03-28

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high

  4. HIA 2015 DOE Zero Energy Ready Home Case Study: Sunroc Builders, Bates Avenue, Lakeland, FL

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Sunroc Builders Bates Avenue Lakeland, FL DOE ZERO ENERGY READY HOME(tm) The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building science research. Advanced technologies are designed in

  5. General Atomics (GA) | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's...

  6. Halbach array DC motor/generator

    DOE Patents [OSTI]

    Merritt, B.T.; Dreifuerst, G.R.; Post, R.F.

    1998-01-06

    A new configuration of DC motor/generator is based on a Halbach array of permanent magnets. This motor does not use ferrous materials so that the only losses are winding losses and losses due to bearings and windage. An ``inside-out`` design is used as compared to a conventional motor/generator design. The rotating portion, i.e., the rotor, is on the outside of the machine. The stationary portion, i.e., the stator, is formed by the inside of the machine. The rotor contains an array of permanent magnets that provide a uniform field. The windings of the motor are placed in or on the stator. The stator windings are then ``switched`` or ``commutated`` to provide a DC motor/generator much the same as in a conventional DC motor. The commutation can be performed by mechanical means using brushes or by electronic means using switching circuits. The invention is useful in electric vehicles and adjustable speed DC drives. 17 figs.

  7. Halbach array DC motor/generator

    DOE Patents [OSTI]

    Merritt, Bernard T.; Dreifuerst, Gary R.; Post, Richard F.

    1998-01-01

    A new configuration of DC motor/generator is based on a Halbach array of permanent magnets. This motor does not use ferrous materials so that the only losses are winding losses and losses due to bearings and windage. An "inside-out" design is used as compared to a conventional motor/generator design. The rotating portion, i.e., the rotor, is on the outside of the machine. The stationary portion, i.e., the stator, is formed by the inside of the machine. The rotor contains an array of permanent magnets that provide a uniform field. The windings of the motor are placed in or on the stator. The stator windings are then "switched" or "commutated" to provide a DC motor/generator much the same as in a conventional DC motor. The commutation can be performed by mechanical means using brushes or by electronic means using switching circuits. The invention is useful in electric vehicles and adjustable speed DC drives.

  8. SUBCONTRACT REPORT: DC-DC Converter for Fuel Cell and Hybrid Vehicles

    SciTech Connect (OSTI)

    Marlino, Laura D; Zhu, Lizhi

    2007-07-01

    The goal of this project is to develop and fabricate a 5kW dc-dc converter with a baseline 14V output capability for fuel cell and hybrid vehicles. The major objectives for this dc-dc converter technology are to meet: Higher efficiency (92%); High coolant temperature,e capability (105 C); High reliability (15 Years/150,000miles); Smaller volume (5L); Lower weight (6kg); and Lower cost ($75/kW). The key technical challenge for these converters is the 105 C coolant temperatures. The power switches and magnetics must be designed to sustain these operating temperatures reliably, without a large cost/mass/volume penalty.

  9. Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles

    SciTech Connect (OSTI)

    Tsai, Jung-Hui; Guo, Der-Feng; Lour, Wen-Shiung

    2011-09-15

    In this article, the comparison of DC performance on InGaP/GaAs pseudomorphic field-effect transistors with tripe doped-channel profiles is demonstrated. As compared to the uniform and high-medium-low doped-channel devices, the low-medium-high doped-channel device exhibits the broadest gate voltage swing and the best device linearity because more twodimensional electron gases are formed in the heaviest doped channel to enhance the magnitude of negative threshold voltage. Experimentally, the transconductance within 50% of its maximum value for gate voltage swing is 4.62 V in the low-medium-high doped-channel device, which is greater than 3.58 (3.30) V in the uniform (high-medium-low) doped-channel device.

  10. Epitaxial growth of aluminum nitride on AlGaN by reactive sputtering at low temperature

    SciTech Connect (OSTI)

    Duquenne, C.; Djouadi, M. A.; Tessier, P. Y.; Jouan, P. Y.; Besland, M. P.; Brylinski, C.; Aubry, R.; Delage, S.

    2008-08-04

    We report the synthesis of 1 {mu}m thick single crystalline aluminum nitride films by dc magnetron sputtering on AlGaN/GaN layer grown on sapphire substrate at low temperature (substrate temperature <250 deg. C). The microstructure of c-axis oriented AlN films deposited on Si (100) and AlGaN <0001> substrates was studied by x-ray diffraction, selected area electron diffraction, and transmission electron microscopy. The optimization of process parameters, involving low energetic ion bombardment on film surface (20-30 eV) during the growth, leads to an increase in the surface mobility and thus promotes AlN epitaxial growth on AlGaN substrate at 250 deg. C.

  11. Global DC Power System Market Analysis | OpenEI Community

    Open Energy Info (EERE)

    either positive or negative. It can be powered from an AC or DC source. A basic DC power system consists of a transformer, a rectifier, a filter, and a regulator. All these...

  12. Global DC Power System Market Growth | OpenEI Community

    Open Energy Info (EERE)

    either positive or negative. It can be powered from an AC or DC source. A basic DC power system consists of a transformer, a rectifier, a filter, and a regulator. All these...

  13. Global DC Power System Market Space | OpenEI Community

    Open Energy Info (EERE)

    either positive or negative. It can be powered from an AC or DC source. A basic DC power system consists of a transformer, a rectifier, a filter, and a regulator. All these...

  14. Simulations for preliminary design of a multi-cathode DC electron gun for eRHIC

    SciTech Connect (OSTI)

    Wu, Q.; Ben-Zvi, I.; Chang, X.; Skaritka, J.

    2010-05-23

    The proposed electron ion collider, eRHIC, requires a large average polarized electron current of 50 mA, which is more than 20 times higher than the present experimental output of a single, highly polarized electron source, based on cesiated super-lattice GaAs. To meet eRHIC's requirement for current, we designed a multicathode DC electron gun for injection. The twenty-four GaAs cathodes emit electrons in sequence, then are combined on axis by a rotating field (or 'funnelled'). In addition to its ultra-high vacuum requirements, the multicathode DC electron gun will place high demand on the electric field symmetry, the magnetic field shielding, and on preventing arcing. In this paper, we discuss our results from a 3D simulation of the latest model for this gun. The findings will guide the actual design in future. Their preliminary design of a multi-cathode electron source for eRHIC demonstrated tolerable fields and reasonable results in both field and particle simulations.

  15. Energy Training Session for DC Elementary School Teachers

    Broader source: Energy.gov [DOE]

    Are you an elementary school teacher in Washington, DC, looking for creative ideas to introduce energy curriculum to your students?

  16. Washington DC Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    for your school's state, county, city, or district. For more information, please visit the Middle School Coach page. Washington, DC Region Middle School Regional Washington, DC DC...

  17. Washington DC Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    school's state, county, city, or district. For more information, please visit the High School Coach page. Washington, DC Region High School Regional Washington, DC Washington, DC...

  18. Recovery Act State Memos Washington, DC

    Broader source: Energy.gov (indexed) [DOE]

    Washington, DC For questions about DOE's Recovery Act activities, please contact the DOE Recovery Act Clearinghouse: 1-888-DOE-RCVY (888-363-7289), Monday through Friday, 9 a.m. to 7 p.m. Eastern Time https://recoveryclearinghouse.energy.gov/contactUs.htm. All numbers and projects listed as of June 1, 2010 TABLE OF CONTENTS RECOVERY ACT SNAPSHOT................................................................................... 1 FUNDING ALLOCATION

  19. Department.,of Energy Washington; DC'

    Office of Legacy Management (LM)

    ,of Energy Washington; DC' 20585 JAN 1 1 1995 / .,, .- L ., The Honorable Thomas Menino ', 1 City Hall Square Boston, Massachusetts 02201 ,'. " p' ifi.. ' . .' b I,' \ Dear.Mayor.Me$ino: DOE's Formerly Util,ized for identification of sites.used by*DOEfs predecessor' agencies, determining, their current radiological condition and, where it has authority, performing remedial action to cleanup sites to meet current radiologicalprotection requirements.~ A conservative set of.technical

  20. Energy Challenge Two: The WeatherizeDC Campaign

    Broader source: Energy.gov [DOE]

    WeatherizeDC is a campaign of The DC Project, a nonprofit based in Washington, D.C., founded by former leaders of the Obama for America campaign around a mission to advance economic and environmental justice by creating clean energy career opportunities for people who need them most.

  1. Q&A: Kristen Psaki of WeatherizeDC

    Broader source: Energy.gov [DOE]

    Roughly 20 percent of carbon emissions come from inefficient homes. The DC Project says it has found a way to mitigate emissions and create jobs, a winning combination. WeatherizeDC is the non-profit’s effort to use a community engagement model to help DC residents find green jobs and live a more energy efficient lifestyle.

  2. EA-377 DC Energy Texas | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    7 DC Energy Texas EA-377 DC Energy Texas Order authorizing DC Energy Texas to export electric energy to Mexico. EA-377 DCE Texas Order.pdf (1.96 MB) More Documents & Publications Application to export electric energy OE Docket No. EA-377 Alston&Bird LLP EA-403 Frontera Marketing,

  3. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  4. A High Power Density DC-DC Converter for Distributed PV Architectures

    SciTech Connect (OSTI)

    Mohammed S. Agamy; Song Chi; Ahmed Elasser; Maja Harfman-Todorovic; Yan Jiang; Frank Mueller; Fengfeng Tao

    2012-06-01

    In order to maximize solar energy harvesting capabilities, power converters have to be designed for high efficiency and good MPPT and voltage/current performance. When many converters are used in distributed systems, power density also becomes an important factor as it allows for simpler system integration. In this paper a high power density string dc-dc converter suitable for distributed medium to large scale PV installation is presented. A simple partial power processing topology, implemented with all silicon carbide devices provides high efficiency as well as high power density. A 3.5kW, 100kHz converter is designed and tested to verify the proposed methods.

  5. DC-DC Converter Topology Assessment for Large Scale Distributed Photovoltaic Plant Architectures

    SciTech Connect (OSTI)

    Agamy, Mohammed S; Harfman-Todorovic, Maja; Elasser, Ahmed; Sabate, Juan A; Steigerwald, Robert L; Jiang, Yan; Essakiappan, Somasundaram

    2011-07-01

    Distributed photovoltaic (PV) plant architectures are emerging as a replacement for the classical central inverter based systems. However, power converters of smaller ratings may have a negative impact on system efficiency, reliability and cost. Therefore, it is necessary to design converters with very high efficiency and simpler topologies in order not to offset the benefits gained by using distributed PV systems. In this paper an evaluation of the selection criteria for dc-dc converters for distributed PV systems is performed; this evaluation includes efficiency, simplicity of design, reliability and cost. Based on this evaluation, recommendations can be made as to which class of converters is best fit for this application.

  6. National Press Club Washington, D.C.

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Is the Energy Race our new "Sputnik" Moment? National Press Club Washington, D.C. 29 November, 2010 1 October 4, 1957, the Soviet Union placed a 184 pound satellite into orbit. "The Soviet Union now has - in the combined category of scientists and engineers - a greater number than the United States. And it is producing graduates in these fields at a much faster rate ... This trend is disturbing. Indeed, according to my scientific advisers, this is for the American people the most

  7. Fun D.C. Jobs for Physicists

    SciTech Connect (OSTI)

    Clark Cully

    2009-09-30

    Physicists make valuable contributions in a wide variety of careers, including those in Washington. Many national challenges, including energy, innovation, and security, create a demand for technically-competent individuals across government. Clark will discuss some of the many programs in D.C. designed to attract the best and brightest minds, from grad-students to professors, from short-term assignments to whole new careers. These are great opportunities to use your expertise and enrich your knowledge of the broader scientific enterprise, all while serving society.

  8. GA SNC Solar | Open Energy Information

    Open Energy Info (EERE)

    GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and Sierra Nevada Corp. References: GA-SNC...

  9. DOE Zero Energy Ready Home Case Study 2013: Manatee County Habitat for Humanity, Ellenton, FL, Affordable, Hope Landing #2

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Manatee County Habitat for Humanity Ellenton, FL BUILDING TECHNOLOGIES OFFICE The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR for Homes Version 3 for an energy-efficient home built on a solid foundation of building science research. Advanced technologies are designed in to

  10. DC Survey 2013 | National Nuclear Security Administration | (NNSA)

    National Nuclear Security Administration (NNSA)

    Management / Aerial Measuring System DC Survey 2013 DC Background Survey (.zip) DC 2013 survey Related Topics ams Emergency Response Related News Department of Energy's chief risk officer visits Nevada National Security Site NNSA sites prepared for disasters using real-time response management system NNSA emergency response assets highlighted NNSA displays helicopter in Baltimore NNSA to Conduct Aerial Radiation Monitoring Survey over Boston April 17-20

  11. Energy Incentive Programs, Washington DC | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Washington DC Energy Incentive Programs, Washington DC Updated October 2015 What public-purpose-funded energy efficiency programs are available in the District of Columbia? In 2008, the Council of the District of Columbia passed the Clean and Affordable Energy Act (CAEA), establishing the DC Sustainable Energy Utility (DCSEU), whose mission is to provide energy assistance to low-income residents and support energy efficiency and renewable energy programs. The DCSEU, funded by the Sustainable

  12. AVTA: Hasdec DC Fast Charging Testing Results | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Hasdec DC Fast Charging Testing Results AVTA: Hasdec DC Fast Charging Testing Results The Vehicle Technologies Office's Advanced Vehicle Testing Activity carries out testing on a wide range of advanced vehicles and technologies on dynamometers, closed test tracks, and on-the-road. These results provide benchmark data that researchers can use to develop technology models and guide future research and development. The following report describes results from testing done on the Hasdec DC fast

  13. DC OPC Comments. September 17, 2010 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    OPC Comments. September 17, 2010 DC OPC Comments. September 17, 2010 Comments of the office of peoples counsel, washington DC in response to the department of energy's request for information concerning smart grid issues. DC OPC Comments. September 17, 2010 (104.21 KB) More Documents & Publications Addressing Policy and Logistical Challenges to smart grid Implementation: eMeter Response to Department of Energy RFI Comments of DRSG to DOE Smart Grid RFI: Addressing Policy and Logistical

  14. DC Bus Capacitor Manufacturing Facility for Electric Drive Vehicles

    Broader source: Energy.gov [DOE]

    2010 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C.

  15. DC Resistivity Survey (Schlumberger Array) At Raft River Geothermal...

    Open Energy Info (EERE)

    Raft River Geothermal Area (1974-1975) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: DC Resistivity Survey (Schlumberger Array) At Raft River...

  16. PowerCentsDC Program Final Report | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PowerCentsDC Program Final Report PowerCentsDC Program Final Report In 2007 the Smart Meter Pilot Program Inc initiated PowerCentsDC to test the reactions and impacts on consumer behavior of smart prices, smart meters, and smart thermostats in the District of Columbia. PowerCentsDC Program Final Report (2.79 MB) More Documents & Publications Guidebook for ARRA Smart Grid Program Metrics and Benefits Interim Report on Customer Acceptance, Retention, and Response to Time-Based Rates from the

  17. Persons Who Received the DC PSC's Emergency Petition and Complaint...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ("DC PSC") Emergency Petition Comments on Department of Energy's Emergency Order To Resume Limited Operation at Mirant's Potomac River Generating Station and Proposed Mirant ...

  18. DC Resistivity Survey (Dipole-Dipole Array) At Coso Geothermal...

    Open Energy Info (EERE)

    Coso Geothermal Area (1977) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: DC Resistivity Survey (Dipole-Dipole Array) At Coso Geothermal Area...

  19. DC Fast Charge Impacts on Battery Life and Vehicle Performance...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Vehicle Technologies Office Merit Review 2014: DC Fast Charging Effects on Battery Life and EVSE Efficiency and Security Testing AVTA: 2011 Honda CRZ HEV Testing Results AVTA: 2011 ...

  20. Washington DC Reliability Requirements and the Need to Operate...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Washington DC Reliability Requirements and the Need to Operate Mirant's Potomac River Generation Station to Support Local Area Reliability (Oak Ridge National Laboratory 2005) ...

  1. Low Cost, High Temperature, High Ripple Current DC Bus Capacitors

    Broader source: Energy.gov [DOE]

    2010 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C.

  2. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  3. Development of a Novel Bi-Directional Isolated Multiple-Input DC-DC Converter

    SciTech Connect (OSTI)

    Li, H.

    2005-10-24

    There is vital need for a compact, lightweight, and efficient energy-storage system that is both affordable and has an acceptable cycle life for the large-scale production of electric vehicles (EVs) and hybrid electric vehicles (HEVs). Most of the current research employs a battery-storage unit (BU) combined with a fuel cell (FC) stack in order to achieve the operating voltage-current point of maximum efficiency for the FC system. A system block diagram is shown in Fig.1.1. In such a conventional arrangement, the battery is sized to deliver the difference between the energy required by the traction drive and the energy supplied by the FC system. Energy requirements can increase depending on the drive cycle over which the vehicle is expected to operate. Peak-power transients result in an increase of losses and elevated temperatures which result in a decrease in the lifetime of the battery. This research will propose a novel two-input direct current (dc) dc to dc converter to interface an additional energy-storage element, an ultracapacitor (UC), which is shown in Fig.1.2. It will assist the battery during transients to reduce the peak-power requirements of the battery.

  4. Dynamic microscopic theory of fusion using DC-TDHF

    SciTech Connect (OSTI)

    Umar, A. S.; Oberacker, V. E.; Keser, R.; Maruhn, J. A.; Reinhard, P.-G.

    2012-10-20

    The density-constrained time-dependent Hartree-Fock (DC-TDHF) theory is a fully microscopic approach for calculating heavy-ion interaction potentials and fusion cross sections below and above the fusion barrier. We discuss recent applications of DC-TDHF method to fusion of light and heavy systems.

  5. National Small Business Federal Contracting Summit-DC Fall Conference

    Broader source: Energy.gov [DOE]

    The 2014 National Small Business Federal Contracting Summit - DC Fall Conference is presented jointly by the National Association of Small Business Contractors (the Supplier Council of The American Small Business Chamber of Commerce) and the U.S. Women's Chamber of Commerce in Washington DC.

  6. Read-out electronics for DC squid magnetic measurements

    DOE Patents [OSTI]

    Ganther, Jr., Kenneth R.; Snapp, Lowell D.

    2002-01-01

    Read-out electronics for DC SQUID sensor systems, the read-out electronics incorporating low Johnson noise radio-frequency flux-locked loop circuitry and digital signal processing algorithms in order to improve upon the prior art by a factor of at least ten, thereby alleviating problems caused by magnetic interference when operating DC SQUID sensor systems in magnetically unshielded environments.

  7. Historical Material Analysis of DC745U Pressure Pads

    SciTech Connect (OSTI)

    Ortiz-Acosta, Denisse

    2012-07-30

    As part of the Enhance Surveillance mission, it is the goal to provide suitable lifetime assessment of stockpile materials. This report is an accumulation of historical publication on the DC745U material and their findings. It is the intention that the B61 LEP program uses this collection of data to further develop their understanding and potential areas of study. DC745U is a commercially available silicone elastomer consisting of dimethyl, methyl-phenyl, and methyl-vinyl siloxane repeat units. Originally, this material was manufactured by Dow Corning as Silastic{reg_sign} DC745U at their manufacturing facility in Kendallville, IN. Recently, Dow Corning shifted this material to the Xiameter{reg_sign} brand product line. Currently, DC745U is available through Xiameter{reg_sign} or Dow Corning's distributor R. D. Abbott Company. DC745U is cured using 0.5 wt% vinyl-specific peroxide curing agent known as Luperox 101 or Varox DBPH-50. This silicone elastomer is used in numerous parts, including two major components (outer pressure pads and aft cap support) in the W80 and as pressure pads on the B61. DC745U is a proprietary formulation, thus Dow Corning provides limited information on its composition and properties. Based on past experience with Dow Corning, DC745U is at risk of formulation changes without notification to the costumer. A formulation change for DC745U may have a significant impact because the network structure is a key variable in determining material properties. The purpose of this report is to provide an overview of historical DC745U studies and identify gaps that need to be addressed in future work. Some of the previous studies include the following: 1. Spectroscopic characterization of raw gum stock. 2. Spectroscopic, thermal, and mechanical studies on cured DC745U. 3. Nuclear Magnetic Resonance (NMR) and solvent swelling studies on DC745U with different crosslink densities. 4. NMR, solvent swelling, thermal, and mechanical studies on thermally aged

  8. HIA 2015 DOE Zero Energy Ready Home Case Study: Habitat for Humanity South Sarasota, Laurel Gardens #794, Nakomis, FL

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    #794 Nokomis, FL DOE ZERO ENERGY READY HOME(tm) The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building science research. Advanced technologies are designed in to give you superior

  9. AMENDMENT OF SOLlClTATlONlMODlFlCATION OF CONTRACT 1 I . CONTR"CT ID CODE

    National Nuclear Security Administration (NNSA)

    SOLlClTATlONlMODlFlCATION OF CONTRACT 1 I . CONTR"CT ID CODE BWXT Pantex, LLC Route 726, Mt. Athos Road Lynchburg, VA 24506 PAGE 1 OF 2 PAGES Albuquerque, NM 8718Ii4400 I Amarillo, TX 79120 9B. DATED (SEE m M 11) 10A. MODIFICATION OF CONTRACTIORDER NO. 8. NAME AND ADDRESS OF CONTRACTOR (No., street, county, &ate, ZIP Code) I ( DE-ACOCOOAL66620 10B. DATED (SEE / E M 13) 2. AMENDMENT/MODIFICATION NO. M097 9A. AMENDMENT OF SOLICITATION NO. Offera must a d t n d e d p rsceipt of this m e n

  10. DOE Zero Ready Home Case Study: Habitat for Humanity South Sarasota County,Laurel Gardens, Nokomis, FL

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Nokomis, FL DOE ZERO ENERGY READY HOME(tm) The U.S. Department of Energy invites home builders across the country to meet the extraordinary levels of excellence and quality specified in DOE's Zero Energy Ready Home program (formerly known as Challenge Home). Every DOE Zero Energy Ready Home starts with ENERGY STAR Certified Homes Version 3.0 for an energy-efficient home built on a solid foundation of building science research. Advanced technologies are designed in to give you superior

  11. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  12. Solar Decathlon at Home in the D.C. Community | Department of...

    Office of Environmental Management (EM)

    at Home in the D.C. Community Solar Decathlon at Home in the D.C. Community December 4, ... were add by DC Habitat after the Solar Decathlon demonstration home was moved to Deanwood. ...

  13. Linked Open Data Workshop in Washington, D.C. | OpenEI Community

    Open Energy Info (EERE)

    Linked Open Data Workshop in Washington, D.C. Home > Linked Open Data Workshop in Washington, D.C. > Posts by term > Linked Open Data Workshop in Washington, D.C. Content Group...

  14. Application to Export Electric Energy OE Docket No. EA-351 DC...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    1 DC Energy Dakota, LLC Application to Export Electric Energy OE Docket No. EA-351 DC Energy Dakota, LLC Application from DC Energy Dakota, LLC to export electric energy to Canada...

  15. ARM - Field Campaign - DC-8 Cloud Radar Campaign

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govCampaignsDC-8 Cloud Radar Campaign Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : DC-8 Cloud Radar Campaign 1998.06.16 - 1998.06.28 Lead Scientist : Stephen Sekelsky Data Availability Quick-look images and datalogs are available from http://abyss.ecs.umass.edu/CART98DC8/ Data files are available to interested science team members. Contact Lihua Li (lihua@mirsl.ecs.umass.edu) or Steve Sekelsky (sekelsky@mirsl.ecs.umass.edu). Summary

  16. Implementing the DC Mode in Cosmological Simulations with Supercomoving Variables

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gnedin, Nickolay Y; Kravtsov, Andrey V; Rudd, Douglas H

    2011-06-02

    As emphasized by previous studies, proper treatment of the density fluctuation on the fundamental scale of a cosmological simulation volume - the 'DC mode' - is critical for accurate modeling of spatial correlations on scales ~> 10% of simulation box size. We provide further illustration of the effects of the DC mode on the abundance of halos in small boxes and show that it is straightforward to incorporate this mode in cosmological codes that use the 'supercomoving' variables. The equations governing evolution of dark matter and baryons recast with these variables are particularly simple and include the expansion factor, andmorehence the effect of the DC mode, explicitly only in the Poisson equation.less

  17. Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

    SciTech Connect (OSTI)

    Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea

    2015-09-28

    We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

  18. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  19. Electrodeposited Nanolaminated CoNiFe Cores for Ultracompact DC-DC Power Conversion

    SciTech Connect (OSTI)

    Kim, J; Kim, M; Herrault, F; Park, JY; Allen, MG

    2015-09-01

    Laminated metallic alloy cores (i.e., alternating layers of thin film metallic alloy and insulating material) of appropriate lamination thickness enable suppression of eddy current losses at high frequencies. Magnetic cores comprised of many such laminations yield substantial overall magnetic volume, thereby enabling high-power operation. Previously, we reported nanolaminated permalloy (Ni-80 Fe-20) cores based on a sequential electrodeposition technique, demonstrating negligible eddy current losses at peak flux densities up to 0.5 T and operating at megahertz frequencies. This paper demonstrates improved performance of nanolaminated cores comprising tens to hundreds of layers of 300-500-nm-thick CoNiFe films that exhibit superior magnetic properties (e.g., higher saturation flux density and lower coercivity) than permalloy. Nanolaminated CoNiFe cores can be operated up to a peak flux density of 0.9 T, demonstrating improved power handling capacity and exhibiting 30% reduced volumetric core loss, attributed to lowered hysteresis losses compared to the nanolaminated permalloy core of the same geometry. Operating these cores in a buck dc-dc power converter at a switching frequency of 1 MHz, the nanolaminated CoNiFe cores achieved a conversion efficiency exceeding 90% at output power levels up to 7 W, compared to an achieved permalloy core conversion efficiency below 86% at 6 W.

  20. We Have a Winner - DC High School Regional Science Bowl Competition...

    Office of Environmental Management (EM)

    We Have a Winner - DC High School Regional Science Bowl Competition Held Last Saturday We Have a Winner - DC High School Regional Science Bowl Competition Held Last Saturday ...

  1. Improved DC Gun and Insulator Assembly (Technical Report) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    Improved DC Gun and Insulator Assembly Citation Details In-Document Search Title: Improved DC Gun and Insulator Assembly Many user facilities such as synchrotron radiation light ...

  2. The Automotive X Prize rolls into Washington, DC 09/16/10 | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    The Automotive X Prize rolls into Washington, DC 091610 The Automotive X Prize rolls into Washington, DC 091610 Addthis ProgressiveXPrizeEventSeptember162010Peraves187mpg...

  3. National Science Bowl Brings Best and Brightest to DC

    Broader source: Energy.gov [DOE]

    The National Science Bowl Finals in Washington D.C. April 27 to 30 pit 113 high and middle school teams against one another answering questions Jeopardy-style about biology, chemistry, earth science, physics, astronomy, and math.

  4. Fault Detection and Isolation in Low-Voltage DC Distribution...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    PDF Document Publication CU2941D-3222D (DC Microgrid) Marketing Summary.pdf (172 KB) ... Small-scale low-voltage distribution systems, such as a microgrid, have many advantages to ...

  5. The War of the Currents: AC vs. DC Power

    Office of Energy Efficiency and Renewable Energy (EERE)

    Nikola Tesla and Thomas Edison played key roles in the War of the Currents. Learn more about AC and DC power -- and how they affect our electricity use today.

  6. DC Bus Capacitor Manufacturing Facility for Electric Drive Vehicles...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    0 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C. PDF icon apearravt028boan2010...

  7. Radiofrequency amplifier based on a dc superconducting quantum interference device

    DOE Patents [OSTI]

    Hilbert, C.; Martinis, J.M.; Clarke, J.

    1984-04-27

    A low noise radiofrequency amplifer, using a dc SQUID (superconducting quantum interference device) as the input amplifying element. The dc SQUID and an input coil are maintained at superconductivity temperatures in a superconducting shield, with the input coil inductively coupled to the superconducting ring of the dc SQUID. A radiofrequency signal from outside the shield is applied to the input coil, and an amplified radiofrequency signal is developed across the dc SQUID ring and transmitted to exteriorly of the shield. A power gain of 19.5 +- 0.5 dB has been achieved with a noise temperature of 1.0 +- 0.4 K at a frequency of 100 MHz.

  8. Radiofrequency amplifier based on a dc superconducting quantum interference device

    DOE Patents [OSTI]

    Hilbert, Claude; Martinis, John M.; Clarke, John

    1986-01-01

    A low noise radiofrequency amplifier (10), using a dc SQUID (superconducting quantum interference device) as the input amplifying element. The dc SQUID (11) and an input coil (12) are maintained at superconductivity temperatures in a superconducting shield (13), with the input coil (12) inductively coupled to the superconducting ring (17) of the dc SQUID (11). A radiofrequency signal from outside the shield (13) is applied to the input coil (12), and an amplified radiofrequency signal is developed across the dc SQUID ring (17) and transmitted to exteriorly of the shield (13). A power gain of 19.5.+-.0.5 dB has been achieved with a noise temperature of 1.0.+-.0.4 K. at a frequency of 100 MHz.

  9. User Science Exhibition March 28-29 in Washington DC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Science Exhibition March 28-29 in Washington DC User Science Exhibition March 28-29 in Washington DC February 17, 2012 by Francesca Verdier This March 28 and 29 the National User Facilities Organization is holding a User Science Exhibition on Capitol Hill. All major DOE facilities will have posters and representatives there. NERSC users are welcome to attend. This event will highlight the significant and important role that scientific user facilities play in science education, economic

  10. Energy Department Completes Cool Roof Installation on DC Headquarters

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Building to Save Money by Saving Energy | Department of Energy Completes Cool Roof Installation on DC Headquarters Building to Save Money by Saving Energy Energy Department Completes Cool Roof Installation on DC Headquarters Building to Save Money by Saving Energy December 14, 2010 - 12:00am Addthis Washington - Secretary Steven Chu today announced the completion of a new cool roof installation on the Department of Energy's Headquarters West Building. There was no incremental cost to adding

  11. Washington DC Reliability Requirements and the Need to Operate Mirant's

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Potomac River Generation Station to Support Local Area Reliability (Oak Ridge National Laboratory 2005) | Department of Energy Washington DC Reliability Requirements and the Need to Operate Mirant's Potomac River Generation Station to Support Local Area Reliability (Oak Ridge National Laboratory 2005) Washington DC Reliability Requirements and the Need to Operate Mirant's Potomac River Generation Station to Support Local Area Reliability (Oak Ridge National Laboratory 2005) Pursuant to

  12. AVTA: Battery Testing - DC Fast Charging's Effects on PEV Batteries |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Battery Testing - DC Fast Charging's Effects on PEV Batteries AVTA: Battery Testing - DC Fast Charging's Effects on PEV Batteries The Vehicle Technologies Office's Advanced Vehicle Testing Activity carries out testing on a wide range of advanced vehicles and technologies on dynamometers, closed test tracks, and on-the-road. These results provide benchmark data that researchers can use to develop technology models and guide future research and development. The following

  13. Memorandum From: Leo Breton, Founder Energy Innovations Washington, DC

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    From: Leo Breton, Founder Energy Innovations Washington, DC 202-329-6813 Lbreton2000@yahoo.com To: expartecommunications@hq.doe.gov Subj: Complying with DOE's "ex parte communications" requirements Leo Breton, representing Energy Innovations of Washington, DC, a small company engaged in improving the energy efficiency of appliances, automobiles, and HVAC systems, requested a meeting with DOE regarding residential cooktop and range efficiency standards and related test procedures. A

  14. A High Efficiency DC-DC Converter Topology Suitable for Distributed Large Commercial and Utility Scale PV Systems

    SciTech Connect (OSTI)

    Agamy, Mohammed S; Harfman-Todorovic, Maja; Elasser, Ahmed; Steigerwald, Robert L; Sabate, Juan A; Chi, Song; McCann, Adam J; Zhang, Li; Mueller, Frank

    2012-09-01

    In this paper a DC-DC power converter for distributed photovoltaic plant architectures is presented. The proposed converter has the advantages of simplicity, high efficiency, and low cost. High efficiency is achieved by having a portion of the input PV power directly fed forward to the output without being processed by the converter. The operation of this converter also allows for a simplified maximum power point tracker design using fewer measurements

  15. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  16. DOE - Office of Legacy Management -- National Bureau of Standards - DC 01

    Office of Legacy Management (LM)

    Bureau of Standards - DC 01 FUSRAP Considered Sites Site: NATIONAL BUREAU OF STANDARDS (DC.01) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Van Ness Street , Washington , D.C. DC.01-1 Evaluation Year: 1987 DC.01-2 DC.01-3 Site Operations: Performed quality analysis lab work for the MED during the 1940s; decontamination efforts were completed in 1952 and the building was demolished in 1976 DC.01-3 Site Disposition: Eliminated -

  17. DC Microgrids Scoping Study. Estimate of Technical and Economic Benefits

    SciTech Connect (OSTI)

    Backhaus, Scott N.; Swift, Gregory William; Chatzivasileiadis, Spyridon; Tschudi, William; Glover, Steven; Starke, Michael; Wang, Jianhui; Yue, Meng; Hammerstrom, Donald

    2015-03-23

    Microgrid demonstrations and deployments are expanding in US power systems and around the world. Although goals are specific to each site, these microgrids have demonstrated the ability to provide higher reliability and higher power quality than utility power systems and improved energy utilization. The vast majority of these microgrids are based on AC power transfer because this has been the traditionally dominant power delivery scheme. Independently, manufacturers, power system designers and researchers are demonstrating and deploying DC power distribution systems for applications where the end-use loads are natively DC, e.g., computers, solid-state lighting, and building networks. These early DC applications may provide higher efficiency, added flexibility, reduced capital costs over their AC counterparts. Further, when onsite renewable generation, electric vehicles and storage systems are present, DC-based microgrids may offer additional benefits. Early successes from these efforts raises a question - can a combination of microgrid concepts and DC distribution systems provide added benefits beyond what has been achieved individually?

  18. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  19. Al00.3Ga0.7N PN diode with breakdown voltage >1600 V

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Allerman, A. A.; Armstrong, A. M.; Fischer, A. J.; Dickerson, J. R.; Crawford, M. H.; King, M. P.; Moseley, M. W.; Wierer, J. J.; Kaplar, R. J.

    2016-07-21

    Demonstration of Al00.3Ga0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm2 was achieved under DC forward bias and a reverse leakage current <3 nA was measured for voltages <1200 V. The differential on-resistance of 16 mΩ cm2 is limited by the lateral conductivity of the n-type contact layer required by the front-surface contactmore » geometry of the device. An effective critical electric field of 5.9 MV/cm was determined from the epilayer properties and the reverse current–voltage characteristics. To our knowledge, this is the first aluminium gallium nitride (AlGaN)-based PN diode exhibiting a breakdown voltage in excess of 1 kV. Finally, we note that a Baliga figure of merit (Vbr2/Rspec,on) of 150 MW/cm2 found is the highest reported for an AlGaN PN diode and illustrates the potential of larger-bandgap AlGaN alloys for high-voltage devices.« less

  20. An integrated flyback converter for DC uninterruptible power supply

    SciTech Connect (OSTI)

    Ma, K.W.; Lee, Y.S.

    1996-03-01

    An integrated flyback converter performing the combined functions of uninterruptible power supply (UPS) and switch-mode power supply (SMPS) is presented. This converter has a high voltage main power input and a low voltage backup battery input. DC output is obtained form the main input via a flyback converter during normal operation and from the backup battery via another flyback converter when input power fails. High conversion efficiency is achieved in normal, backup, and charging modes as there is only a single dc-dc conversion in each mode. The converter circuit is very simple, with two switching transistors, a relay for mode switching, and a single magnetic structure only. This new design offers substantial improvement in efficiency, size, and cost over the conventional cascade of UPS and SMPS due to single voltage conversion, high frequency switching, and removal of design redundancy. The operation, design, analysis, and experimental results of the converter are presented.

  1. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  2. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  3. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  4. Nuclear magnetic resonance experiments with dc SQUID amplifiers

    SciTech Connect (OSTI)

    Heaney, M.B. . Dept. of Physics Lawrence Berkeley Lab., CA )

    1990-11-01

    The development and fabrication of dc SQUIDs (Superconducting QUantum Interference Devices) with Nb/Al{sub 2}O{sub 3}/Nb Josephson junctions is described. A theory of the dc SQUID as a radio-frequency amplifier is presented, with an optimization strategy that accounts for the loading and noise contributions of the postamplifier and maximizes the signal-to-noise ratio of the total system. The high sensitivity of the dc SQUID is extended to high field NMR. A dc SQUID is used as a tuned radio-frequency amplifier to detect pulsed nuclear magnetic resonance at 32 MHz from a metal film in a 3.5 Tesla static field. A total system noise temperature of 11 K has been achieved, at a bath temperature of 4.2 K. The minimum number of nuclear Bohr magnetons observable from a free precession signal after a single pulse is about 2 {times} 10{sup 17} in a bandwidth of 25 kHz. In a separate experiment, a dc SQUID is used as a rf amplifier in a NQR experiment to observe a new resonance response mechanism. The net electric polarization of a NaClO{sub 3} crystal due to the precessing electric quadrupole moments of the Cl nuclei is detected at 30 MHz. The sensitivity of NMR and NQR spectrometers using dc SQUID amplifiers is compared to the sensitivity of spectrometers using conventional rf amplifiers. A SQUID-based spectrometer has a voltage sensitivity which is comparable to the best achieved by a FET-based spectrometer, at these temperatures and operating frequencies.

  5. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    SciTech Connect (OSTI)

    Kalentyeva, I. L. Zvonkov, B. N.; Vikhrova, O. V.; Danilov, Yu. A.; Demina, P. B.; Dorokhin, M. V.; Zdoroveyshchev, A. V.

    2015-11-15

    InGaAs/GaAsSb/GaAs bilayer quantum-well structures containing a magnetic-impurity δ-layer (Mn) at the GaAs/InGaAs interface are experimentally studied for the first time. The structures are fabricated by metal organic chemical-vapor deposition (MOCVD) and laser deposition on substrates of conducting (n{sup +}) and semi-insulating GaAs in a single growth cycle. The InGaAs-layer thickness is varied from 1.5 to 5 nm. The significant effect of a decrease in the InGaAs quantum-well thickness on the optical and magnetotransport properties of the structures under study is detected. Nonlinear magnetic-field dependence of the Hall resistance and negative magnetoresistance at temperatures of ≤30–40 K, circular polarization of the electroluminescence in a magnetic field, opposite behaviors of the photoluminescence and electroluminescence emission intensities in the structures, and an increase in the contribution of indirect transitions with decreasing InGaAs thickness are observed. Simulation shows that these effects can be caused by the influence of the δ-layer of acceptor impurity (Mn) on the band structure and the hole concentration distribution in the bilayer quantum well.

  6. Graphite electrode DC arc furnace. Innovative technology summary report

    SciTech Connect (OSTI)

    1999-05-01

    The Graphite Electrode DC Arc Furnace (DC Arc) is a high-temperature thermal process, which has been adapted from a commercial technology, for the treatment of mixed waste. A DC Arc Furnace heats waste to a temperature such that the waste is converted into a molten form that cools into a stable glassy and/or crystalline waste form. Hazardous organics are destroyed through combustion or pyrolysis during the process and the majority of the hazardous metals and radioactive components are incorporated in the molten phase. The DC Arc Furnace chamber temperature is approximately 593--704 C and melt temperatures are as high as 1,500 C. The DC Arc system has an air pollution control system (APCS) to remove particulate and volatiles from the offgas. The advantage of the DC Arc is that it is a single, high-temperature thermal process that minimizes the need for multiple treatment systems and for extensive sorting/segregating of large volumes of waste. The DC Arc has the potential to treat a wide range of wastes, minimize the need for sorting, reduce the final waste volumes, produce a leach resistant waste form, and destroy organic contaminants. Although the DC arc plasma furnace exhibits great promise for treating the types of mixed waste that are commonly present at many DOE sites, several data and technology deficiencies were identified by the Mixed Waste Focus Area (MWFA) regarding this thermal waste processing technique. The technology deficiencies that have been addressed by the current studies include: establishing the partitioning behavior of radionuclides, surrogates, and hazardous metals among the product streams (metal, slag, and offgas) as a function of operating parameters, including melt temperature, plenum atmosphere, organic loading, chloride concentration, and particle size; demonstrating the efficacy of waste product removal systems for slag and metal phases; determining component durability through test runs of extended duration, evaluating the effect of

  7. Production EVSE Fact Sheet: DC Fast Charger: Hasetec

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ProGrAM Production EVSE Fact Sheet: DC Fast Charger: Hasetec Specifcations Grid connection Hardwired Connector type CHAdeMo Approximate size (H x W x D inches) 38 x 69 x 21 Charge level DC Fast Charge Input voltage 480 VAC - 3 Phase Isolation Transformer 1 75 kVA Maximum input current 2 120 Amp Test Conditions Test date 10/23/2012 Supply frequency (Hz) 60 Initial ambient temperature (°F) 85 Vehicle Charged Make and model 2011 Nissan Leaf Battery type Li-ion Initial Leaf ESS State of Charge 3 9%

  8. DC Fast Charging at the Workplace | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    DC Fast Charging at the Workplace DC Fast Charging at the Workplace Most employers offering plug-in electric vehicle (PEV) charging install Level 1 or Level 2 charging stations, but there are some cases where employers may want to consider installing DCFC. Level 1 and Level 2 charging can meet the needs of most employees that are parked during an average workday. During one hour of charging, Level 1 charging can replenish 2 to 5 miles of range and Level 2 charging can add about 10-20 miles of

  9. DC Students Take On Regional Science Bowl Competition | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy DC Students Take On Regional Science Bowl Competition DC Students Take On Regional Science Bowl Competition March 10, 2014 - 4:47pm Addthis The high school regional science bowl competition was held on Saturday, February 22, 2014 at the U.S. Department of Energy. The winning team was Woodrow Wilson High School. The high school regional science bowl competition was held on Saturday, February 22, 2014 at the U.S. Department of Energy. The winning team was Woodrow Wilson High School.

  10. High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    DOE Patents [OSTI]

    Shimer, Daniel W.; Lange, Arnold C.

    1995-01-01

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  11. High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    DOE Patents [OSTI]

    Shimer, D.W.; Lange, A.C.

    1995-05-23

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

  12. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs...

    Office of Scientific and Technical Information (OSTI)

    irradiated AlGaNGaN HEMTs This content will become publicly available on August 26, 2016 Title: Degradation mechanisms of 2 MeV proton irradiated AlGaNGaN HEMTs Authors: ...

  13. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  14. (In,Ga)As/GaP electrical injection quantum dot laser

    SciTech Connect (OSTI)

    Heidemann, M. Höfling, S.; Kamp, M.

    2014-01-06

    The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm{sup 2} at a heat-sink temperature of 80 K.

  15. Recovery Act: Integrated DC-DC Conversion for Energy-Efficient Multicore Processors

    SciTech Connect (OSTI)

    Shepard, Kenneth L

    2013-03-31

    In this project, we have developed the use of thin-film magnetic materials to improve in energy efficiency of digital computing applications by enabling integrated dc-dc power conversion and management with on-chip power inductors. Integrated voltage regulators also enables fine-grained power management, by providing dynamic scaling of the supply voltage in concert with the clock frequency of synchronous logic to throttle power consumption at periods of low computational demand. The voltage converter generates lower output voltages during periods of low computational performance requirements and higher output voltages during periods of high computational performance requirements. Implementation of integrated power conversion requires high-capacity energy storage devices, which are generally not available in traditional semiconductor processes. We achieve this with integration of thin-film magnetic materials into a conventional complementary metal-oxide-semiconductor (CMOS) process for high-quality on-chip power inductors. This project includes a body of work conducted to develop integrated switch-mode voltage regulators with thin-film magnetic power inductors. Soft-magnetic materials and inductor topologies are selected and optimized, with intent to maximize efficiency and current density of the integrated regulators. A custom integrated circuit (IC) is designed and fabricated in 45-nm CMOS silicon-on-insulator (SOI) to provide the control system and power-train necessary to drive the power inductors, in addition to providing a digital load for the converter. A silicon interposer is designed and fabricated in collaboration with IBM Research to integrate custom power inductors by chip stacking with the 45-nm CMOS integrated circuit, enabling power conversion with current density greater than 10A/mm2. The concepts and designs developed from this work enable significant improvements in performance-per-watt of future microprocessors in servers, desktops, and mobile

  16. Electrostatic coalescence system with independent AC and DC hydrophilic electrodes

    DOE Patents [OSTI]

    Hovarongkura, A. David; Henry, Jr., Joseph D.

    1981-01-01

    An improved electrostatic coalescence system is provided in which independent AC and DC hydrophilic electrodes are employed to provide more complete dehydration of an oil emulsion. The AC field is produced between an AC electrode array and the water-oil interface wherein the AC electrode array is positioned parallel to the interface which acts as a grounded electrode. The emulsion is introduced into the AC field in an evenly distributed manner at the interface. The AC field promotes drop-drop and drop-interface coalescence of the water phase in the entering emulsion. The continuous oil phase passes upward through the perforated AC electrode array and enters a strong DC field produced between closely spaced DC electrodes in which small dispersed droplets of water entrained in the continuous phase are removed primarily by collection at hydrophilic DC electrodes. Large droplets of water collected by the electrodes migrate downward through the AC electrode array to the interface. All phase separation mechanisms are utilized to accomplish more complete phase separation.

  17. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  18. Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance

    DOE Patents [OSTI]

    Zolper, John C.; Sherwin, Marc E.; Baca, Albert G.

    2000-01-01

    A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is formed and a single anneal at moderate temperature is then performed. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions co-implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region of the Si-channel tail, but does not contribute substantially to the acceptor concentration in the buried p region. As a result, the invention provides for improved field effect semiconductor and related devices with enhancement of both DC and high-frequency performance.

  19. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  20. A hole modulator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2015-02-09

    The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ?332?meV to ?294?meV at 80?A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

  1. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

    2014-05-05

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  2. Smartgrid EV Communication module (SpEC) SAE DC Charging Digital...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DC fast charging enables rapid recharging of electric vehicles along heavy traffic corridors and at public stations. A DC fast charge can add 60 to 80 miles of range to an EV in ...

  3. GRR Update Meeting scheduled for 9/13 in D.C. | OpenEI Community

    Open Energy Info (EERE)

    GRR Update Meeting scheduled for 913 in D.C. Home > Blogs > Kyoung's blog Kyoung's picture Submitted by Kyoung(150) Contributor 6 September, 2012 - 08:51 D.C. GRR meeting update...

  4. Global DC Power System Market Trends, Analysis 2015-2019 | OpenEI...

    Open Energy Info (EERE)

    either positive or negative. It can be powered from an AC or DC source. A basic DC power system consists of a transformer, a rectifier, a filter, and a regulator. All these...

  5. Global DC Power System Market Key Vendors | OpenEI Community

    Open Energy Info (EERE)

    either positive or negative. It can be powered from an AC or DC source. A basic DC power system consists of a transformer, a rectifier, a filter, and a regulator. All these...

  6. Logan Daum > Analyst - DC Energy > Center Alumni > The Energy Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Center at Cornell Logan Daum Analyst - DC Energy lrd56@cornell.edu Formerly a graduate student with the Fennie Group, Logan joined DC Energy in June of 2013.

  7. Interviews in Washington, DC for Albert Einstein Fellowship Semi-Finalists

    Broader source: Energy.gov [DOE]

    Selected semi-finalists in the Albert Einstein Distinguished Educator Fellowship are invited to DC for interviews.

  8. Proceedings of the National Hydrogen Energy Roadmap Workshop: Washington, DC; April 2-3, 2002

    Office of Energy Efficiency and Renewable Energy (EERE)

    Summary of the Proceedings of the National Hydrogen Energy Roadmap Workshop held April 2-3, 2002 in Washington, DC.

  9. Demonstration of LED Retrofit Lamps at the Smithsonian Art Museum, Washington, DC

    SciTech Connect (OSTI)

    Miller, N. J.; Rosenfeld, S. M.

    2012-06-01

    GATEWAY program report on a demonstration of LED retrofit lamps at the Smithsonian American Art Museum in Washington, DC.

  10. Multilevel cascade voltage source inverter with separate DC sources

    DOE Patents [OSTI]

    Peng, F.Z.; Lai, J.S.

    1997-06-24

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations. 15 figs.

  11. Multilevel cascade voltage source inverter with seperate DC sources

    DOE Patents [OSTI]

    Peng, Fang Zheng; Lai, Jih-Sheng

    2001-04-03

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  12. Multilevel cascade voltage source inverter with seperate DC sources

    DOE Patents [OSTI]

    Peng, Fang Zheng; Lai, Jih-Sheng

    1997-01-01

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  13. DC photogun vacuum characterization through photocathode lifetime studies

    SciTech Connect (OSTI)

    Marcy Stutzman; Joseph Grames; Matt Poelker; Kenneth Surles-Law; Philip Adderley

    2007-07-02

    Excellent vacuum is essential for long photocathode lifetimes in DC high voltage photoelectron guns. Vacuum Research at Thomas Jefferson National Accelerator Facility has focused on characterizing the existing vacuum systems at the CEBAF polarized photoinjector and on quantifying improvements for new systems. Vacuum chamber preprocessing, full activation of NEG pumps and NEG coating the chamber walls should improve the vacuum within the electron gun, however, pressure measurement is difficult at pressures approaching the extreme-high-vacuum (XHV) region and extractor gauge readings are not significantly different between the improved and original systems. The ultimate test of vacuum in a DC high voltage photogun is the photocathode lifetime, which is limited by the ionization and back-bombardment of residual gasses. Discussion will include our new load-locked gun design as well as lifetime measurements in both our operational and new photo-guns, and the correlations between measured vacuum and lifetimes will be investigated.

  14. Multilevel cascade voltage source inverter with seperate DC sources

    DOE Patents [OSTI]

    Peng, Fang Zheng (Knoxville, TN); Lai, Jih-Sheng (Blacksburg, VA)

    2002-01-01

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  15. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Final Environmental Impact Statement EIS-0476: ...

  16. The Use of DC Glow Discharges as Undergraduate Educational Tools

    SciTech Connect (OSTI)

    Stephanie A. Wissel and Andrew Zwicker, Jerry Ross, and Sophia Gershman

    2012-10-09

    Plasmas have a beguiling way of getting students excited and interested in physics. We argue that plasmas can and should be incorporated into the undergraduate curriculum as both demonstrations and advanced investigations of electromagnetism and quantum effects. Our device, based on a direct current (DC) glow discharge tube, allows for a number of experiments into topics such as electrical breakdown, spectroscopy, magnetism, and electron temperature.

  17. UNITED STATES DEPARTMENT OF ENERGY Washington, D.C.

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Before the UNITED STATES DEPARTMENT OF ENERGY Washington, D.C. In the Matter of Request for Information ) Regarding Reducing Regulatory Burden ) ''Regulatory Burden RFI" 5 CFR Chapter XXII ) 10 CFR Chapters II, III, and X ) COMMENTS OF THE CONSUMER ELECTRONICS ASSOCIATION Introduction The Consumer Electronics Association (CEA) is the preeminent trade association promoting growth in the $285 billion U.S. consumer electronics industry. CEA represents more than 2,000 corporate members involved

  18. Modeling Microinverters and DC Power Optimizers in PVWatts

    SciTech Connect (OSTI)

    MacAlpine, S.; Deline, C.

    2015-02-01

    Module-level distributed power electronics including microinverters and DC power optimizers are increasingly popular in residential and commercial PV systems. Consumers are realizing their potential to increase design flexibility, monitor system performance, and improve energy capture. It is becoming increasingly important to accurately model PV systems employing these devices. This document summarizes existing published documents to provide uniform, impartial recommendations for how the performance of distributed power electronics can be reflected in NREL's PVWatts calculator (http://pvwatts.nrel.gov/).

  19. dc-plasma-sprayed electronic-tube device

    DOE Patents [OSTI]

    Meek, T.T.

    1982-01-29

    An electronic tube and associated circuitry which is produced by dc plasma arc spraying techniques is described. The process is carried out in a single step automated process whereby both active and passive devices are produced at very low cost. The circuitry is extremely reliable and is capable of functioning in both high radiation and high temperature environments. The size of the electronic tubes produced are more than an order of magnitude smaller than conventional electronic tubes.

  20. Synthesis of silicon nanotubes by DC arc plasma method

    SciTech Connect (OSTI)

    Tank, C. M.; Bhoraskar, S. V.; Mathe, V. L.

    2012-06-05

    Plasma synthesis is a novel technique of synthesis of nanomaterials as they provide high rate of production and promote metastable reactions. Very thin walled silicon nanotubes were synthesized in a DC direct arc thermal plasma reactor. The effect of parameters of synthesis i.e. arc current and presence of hydrogen on the morphology of Si nanoparticles is reported. Silicon nanotubes were characterized by Transmission Electron Microscopy (TEM), Local Energy Dispersive X-ray analysis (EDAX), and Scanning Tunneling Microscopy (STM).

  1. Better Buildings Summit Kicks off in Washington, DC

    Broader source: Energy.gov [DOE]

    The 2016 Better Buildings Summit kicked off today in Washington, DC, bringing together leading organizations across key sectors to showcase solutions to cut energy intensity in their buildings portfolio-wide by 20% over the next ten years. During this three day event, partners and stakeholders will exchange best practices, highlight demonstrated market solutions and discuss future opportunities for greater energy efficiency in America’s homes and buildings.

  2. Simultaneous distribution of AC and DC power - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Electricity Transmission Electricity Transmission Early Stage R&D Early Stage R&D Find More Like This Return to Search Simultaneous distribution of AC and DC power National Renewable Energy Laboratory Contact NREL About This Technology Technology Marketing Summary According to the U.S. Energy Information Administration's 2010 International Energy Outlook, solar energy is expected to grow globally by 12.7% per year until 2035; more than any other renewable energy source. The growth of

  3. Labor-Management Roundtable Forrestal Building, Washington, DC

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Labor-Management Roundtable Forrestal Building, Washington, DC June 27, 2014 10:00 - 11:30 AM (EST) 7E-069 AGENDA Reciprocity Certification Presentation Plaque Presentation by Secretary of Energy Introductory Remarks Ernest J. Moniz, Secretary of Energy Roundtable Remarks/Discussion Union Leadership Closing Remarks Ernest J. Moniz, Secretary of Energy This meeting is about hearing the concerns of the Unions on Safety, Operations, and Communications. Representatives of DOE contractor employees

  4. DC Microgrids Scoping Study: Estimate of Technical and Economic Benefits

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    (March 2015) | Department of Energy Microgrids Scoping Study: Estimate of Technical and Economic Benefits (March 2015) DC Microgrids Scoping Study: Estimate of Technical and Economic Benefits (March 2015) Microgrid demonstrations and deployments have shown the ability of microgrids to provide higher reliability and higher power quality than utility power systems and improved energy utilization. The vast majority of these microgrids are based on AC power, but some manufacturers, power system

  5. A Segmented Drive System with a Small DC Bus Capacitor | Department of

    Broader source: Energy.gov (indexed) [DOE]

    Energy apep_08_su.pdf (346.73 KB) More Documents & Publications A Segmented Drive Inverter Topology with a Small DC Bus Capacitor A Segmented Drive Inverter Topology with a Small DC Bus Capacitor A Segmented Drive Inverter Topology with a Small DC Bus Capacitor

  6. Carrier quenching in InGaP/GaAs double heterostructures

    SciTech Connect (OSTI)

    Wells, Nathan P. Driskell, Travis U.; Hudson, Andrew I.; LaLumondiere, Stephen D.; Lotshaw, William T.; Forbes, David V.; Hubbard, Seth M.

    2015-08-14

    Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm{sup 2} in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes to reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.

  7. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  8. Oxidation of ultrathin GaSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  9. Oxidation of ultrathin GaSe

    SciTech Connect (OSTI)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  10. Enhanced excitonic photoconductivity due to built-in internal electric field in TlGaSe{sub 2} layered semiconductor

    SciTech Connect (OSTI)

    Seyidov, MirHasan Yu. Suleymanov, Rauf A.; ?ale, Yasin; Balaban, Ertan

    2014-12-07

    The strong enhancement, by several orders of magnitude, of the excitonic peak within the photoconductivity spectrum of TlGaSe{sub 2} semiconductor was observed. The samples were polarized in external dc electric field, which was applied prior to the measurements. Due to the accumulation of charges near the surface, an internal electric field was formed. Electron-hole pairs that were created after the absorption of light are fallen in and then separated by the built-in electric field, which prevents radiative recombination process.

  11. Multiphase soft switched DC/DC converter and active control technique for fuel cell ripple current elimination

    DOE Patents [OSTI]

    Lai, Jih-Sheng; Liu, Changrong; Ridenour, Amy

    2009-04-14

    DC/DC converter has a transformer having primary coils connected to an input side and secondary coils connected to an output side. Each primary coil connects a full-bridge circuit comprising two switches on two legs, the primary coil being connected between the switches on each leg, each full-bridge circuit being connected in parallel wherein each leg is disposed parallel to one another, and the secondary coils connected to a rectifying circuit. An outer loop control circuit that reduces ripple in a voltage reference has a first resistor connected in series with a second resistor connected in series with a first capacitor which are connected in parallel with a second capacitor. An inner loop control circuit that reduces ripple in a current reference has a third resistor connected in series with a fourth resistor connected in series with a third capacitor which are connected in parallel with a fourth capacitor.

  12. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  13. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  14. Zinc blende GaAs films grown on wurtzite GaN/sapphire templates

    SciTech Connect (OSTI)

    Chaldyshev, V.V.; Nielsen, B.; Mendez, E.E.; Musikhin, Yu.G.; Bert, N.A.; Ma, Zh.; Holden, Todd

    2005-03-28

    1-{mu}m-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaN/sapphire (0001) templates. In spite of a {approx}20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAs/GaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75-5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.

  15. Effect of temperature on the current (capacitance and conductance)voltage characteristics of Ti/n-GaAs diode

    SciTech Connect (OSTI)

    Ejderha, K.; Duman, S. Urhan, F.; Nuhoglu, C.; Turut, A.

    2014-12-21

    In this study, Ti/n-GaAs Schottky barrier diode has been fabricated by DC magnetron sputtering. The currentvoltage, capacitancevoltage, and conductancevoltage characteristics of Ti/nGaAs diode have been investigated in the temperature range of 80320?K. The ideality factor and barrier height values have been calculated from the forward currentvoltage characteristics. The variation of the diode parameters with the sample temperature has been attributed to the presence of the lateral inhomogeneities of the barrier height. The temperature dependent capacitancevoltage characteristics have been measured to calculate the carrier concentration, diffusion potential, barrier height, and temperature coefficient of the barrier height (??=??0.65?meV K{sup ?1}). The fact that the temperature coefficient of the barrier height changes from metal to metal has been ascribed to the chemical nature of the contact metal or metal electronegativity.

  16. Efficient Switches for Solar Power Conversion: Four Quadrant GaN Switch Enabled Three Phase Grid-Tied Microinverters

    SciTech Connect (OSTI)

    2012-02-13

    Solar ADEPT Project: Transphorm is developing power switches for new types of inverters that improve the efficiency and reliability of converting energy from solar panels into useable electricity for the grid. Transistors act as fast switches and control the electrical energy that flows in an electrical circuit. Turning a transistor off opens the circuit and stops the flow of electrical current; turning it on closes the circuit and allows electrical current to flow. In this way a transistor can be used to convert DC from a solar panel into AC for use in a home. Transphorm’s transistors will enable a single semiconductor device to switch electrical currents at high-voltage in both directions—making the inverter more compact and reliable. Transphorm is using Gallium Nitride (GaN) as a semiconductor material in its transistors instead of silicon, which is used in most conventional transistors, because GaN transistors have lower losses at higher voltages and switching frequencies.

  17. Application to Export Electric Energy OE Docket No. EA-351 DC Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Dakota, LLC | Department of Energy 1 DC Energy Dakota, LLC Application to Export Electric Energy OE Docket No. EA-351 DC Energy Dakota, LLC Application from DC Energy Dakota, LLC to export electric energy to Canada Application to Export Electric Energy OE Docket No. EA-351 DC Energy Dakota, LLC (185.5 KB) More Documents & Publications EA-351 DC Energy Dakota, LLC Application to export electric energy OE Docket No. EA-210-B PPL EnergyPlus, LLC Application to Export Electric Energy OE

  18. Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

    SciTech Connect (OSTI)

    Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu

    2014-11-14

    We present an analysis method for GaN-based metal-insulator-semiconductor (MIS) devices by using capacitance-frequency-temperature (C-f-T) mapping to evaluate the gate-control efficiency and the interface state density, both exhibiting correlations with the linear-region intrinsic transconductance. The effectiveness of the method was exemplified by application to AlN/AlGaN/GaN MIS devices to elucidate the properties of AlN-AlGaN interfaces depending on their formation processes. Using the C-f-T mapping, we extract the gate-bias-dependent activation energy with its derivative giving the gate-control efficiency, from which we evaluate the AlN-AlGaN interface state density through the Lehovec equivalent circuit in the DC limit. It is shown that the gate-control efficiency and the interface state density have correlations with the linear-region intrinsic transconductance, all depending on the interface formation processes. In addition, we give characterization of the AlN-AlGaN interfaces by using X-ray photoelectron spectroscopy, in relation with the results of the analysis.

  19. Princeton Plasma Physics Lab - General Atomics (GA)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http:www.pppl.govnode1132

  20. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  1. Quantum efficiency temporal response and lifetime of a GaAs cathode in SRF electron gun

    SciTech Connect (OSTI)

    Wang, E.; Ben-Zvi, I.; Kewisch, J.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2010-05-23

    RF electron guns with a strained super lattice GaAs cathode can generate polarized electron beam of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface. In a normal conducting RF gun, the extremely high vaccum required by these cathodes can not be met. We report on an experiment with a superconducting SRF gun, which can maintain a vacuum of nearly 10-12 torr because of cryo-pumping at the temperature of 4.2K. With conventional activation, we obtained a QE of 3% at 532 nm, with lifetime of nearly 3 days in the preparation chamber. We plan to use this cathode in a 1.3 GHz 1/2 cell SRF gun to study its performance. In addition, we studied the multipacting at the location of cathode. A new model based on the Forkker-Planck equation which can estimate the bunch length of the electron beam is discussed in this paper. Future particle accelerators such as eRHIC and ILC require high brightness, high current polarized electrons Recently, using a superlattice crystal, the maximum polarization of 95% was reached. Activation with Cs,O lowers the electron affinity and makes it energetically possible for all the electrons excited in to the conduction band and reach the surface to escape into the vacuum. Presently the polarized electron sources are based on DC gun, such as that at the CEBAF at Jlab. In these devices, the life time of the cathode is extended due to the reduced back bombardment in their UHV conditions. However, the low accelerating gradient of the DC guns lead to poor longitudinal emittance. The higher accelerating gradient of the RF gun generates low emittance beams. Superconducting RF guns combine the excellent vacuum conditions of the DC guns with the higher accelerating gradients of the RF guns and provide potentially a long lived cathode with very low transverse and longitudinal emittance. In our work at BNL, we successfully activated the GaAs. The quantum efficient is 3% at 532 nm and is expected

  2. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  3. Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

    SciTech Connect (OSTI)

    Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Charlton, T. R.; Kinane, C. J.; Langridge, S.

    2015-08-07

    We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

  4. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect (OSTI)

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  5. Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

    SciTech Connect (OSTI)

    BastaniNejad, Mahzad; Elmustafa, Abdelmageed A.; Forman, Eric; Covert, Steven; Hansknecht, John; Hernandez-Garcia, Carlos; Poelker, Matthew; Das, Lopa; Kelley, Michael; Williams, Phillip

    2015-07-01

    DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (~nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>μA) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolished by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.

  6. Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

    SciTech Connect (OSTI)

    BastaniNejad, Mahzad Elmustafa, Abdelmageed A.; Forman, Eric; Covert, Steven; Hansknecht, John; Hernandez-Garcia, Carlos; Poelker, Matthew; Das, Lopa; Kelley, Michael; Williams, Phillip

    2015-07-15

    DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (∼nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>μA) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolished by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The authors speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.

  7. Evaluation of electropolished stainless steel electrodes for use in DC high voltage photoelectron guns

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    BastaniNejad, Mahzad; Elmustafa, Abdelmageed A.; Forman, Eric; Covert, Steven; Hansknecht, John; Hernandez-Garcia, Carlos; Poelker, Matthew; Das, Lopa; Kelley, Michael; Williams, Phillip

    2015-07-01

    DC high voltage photoelectron guns are used to produce polarized electron beams for accelerator-based nuclear and high-energy physics research. Low-level field emission (~nA) from the cathode electrode degrades the vacuum within the photogun and reduces the photoelectron yield of the delicate GaAs-based photocathode used to produce the electron beams. High-level field emission (>μA) can cause significant damage the photogun. To minimize field emission, stainless steel electrodes are typically diamond-paste polished, a labor-intensive process often yielding field emission performance with a high degree of variability, sample to sample. As an alternative approach and as comparative study, the performance of electrodes electropolishedmore » by conventional commercially available methods is presented. Our observations indicate the electropolished electrodes exhibited less field emission upon the initial application of high voltage, but showed less improvement with gas conditioning compared to the diamond-paste polished electrodes. In contrast, the diamond-paste polished electrodes responded favorably to gas conditioning, and ultimately reached higher voltages and field strengths without field emission, compared to electrodes that were only electropolished. The best performing electrode was one that was both diamond-paste polished and electropolished, reaching a field strength of 18.7 MV/m while generating less than 100 pA of field emission. The speculate that the combined processes were the most effective at reducing both large and small scale topography. However, surface science evaluation indicates topography cannot be the only relevant parameter when it comes to predicting field emission performance.« less

  8. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect (OSTI)

    Steglich, Martin; Schrempel, Frank; Fchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Hche, Thomas; Tnnermann, Andreas; Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380C. Typical Stransky-Krastanov growth is observed at 410C. At lower temperatures (320C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  9. Design and Performance of the Cornell ERL DC Photoemission Gun

    SciTech Connect (OSTI)

    Smolenski, K.; Bazarov, I.; Dunham, B.; Li, H.; Li, Y.; Liu, X.; Ouzounov, D.; Sinclair, C.

    2009-08-04

    Cornell University is planning to build an Energy Recovery Linac (ERL) X-ray facility. For an ERL, it is well known that the x-ray beam brightness for the users is mainly determined by the initial electron beam emittance provided by the injector. To address technical challenges of producing very low emittance beams at high average current as required for an ERL, Cornell University has proposed a prototype injector with 5-15 MeV beam energy, 100 mA maximum average current and 77 pC/bunch. In this article, we describe the design, construction and initial results for a DC photoemission gun now under operation.

  10. Positron lifetime spectrometer using a DC positron beam

    DOE Patents [OSTI]

    Xu, Jun; Moxom, Jeremy

    2003-10-21

    An entrance grid is positioned in the incident beam path of a DC beam positron lifetime spectrometer. The electrical potential difference between the sample and the entrance grid provides simultaneous acceleration of both the primary positrons and the secondary electrons. The result is a reduction in the time spread induced by the energy distribution of the secondary electrons. In addition, the sample, sample holder, entrance grid, and entrance face of the multichannel plate electron detector assembly are made parallel to each other, and are arranged at a tilt angle to the axis of the positron beam to effectively separate the path of the secondary electrons from the path of the incident positrons.