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Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

0.00-1.99 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 1996 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 1996 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." Note: In 1996, consumption of natural gas for agricultural use

2

Characterization of the CEBAF 100 kV DC GaAs Photoelectron Gun Vacuum System  

SciTech Connect

A vacuum system with pressure in the low ultra-high vacuum (UHV) range is essential for long photocathode lifetimes in DC high voltage GaAs photoguns. A discrepancy between predicted and measured base pressure in the CEBAF photoguns motivated this study of outgassing rates of three 304 stainless steel chambers with different pretreatments and pump speed measurements of non-evaporable getter (NEG) pumps. Outgassing rates were measured using two independent techniques. Lower outgassing rates were achieved by electropolishing and vacuum firing the chamber. The second part of the paper describes NEG pump speed measurements as a function of pressure through the lower part of the UHV range. Measured NEG pump speed is high at pressures above 5×10^?11 Torr, but may decrease at lower pressures depending on the interpretation of the data. The final section investigates the pump speed of a locally produced NEG coating applied to the vacuum chamber walls. These studies represent the first detailed vacuum measurements of CEBAF photogun vacuum chambers.

M.L. Stutzman; P. Adderley; J. Brittian; J. Clark; J. Grames; J. Hansknecht; G.R. Myneni; M. Poelker

2007-05-01T23:59:59.000Z

3

Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors  

SciTech Connect

The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 21011 to 21015 cm2. The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 21015 cm2, both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 21011 to 21015 cm2 exhibited minimal degradation of the saturation drain current and extrinsic trans- conductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present. VC 2011 American Vacuum Society. [DOI: 10.1116/1.3644480

Lo, C. F. [University of Florida; Liu, L. [University of Florida, Gainesville; Ren, F. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2011-01-01T23:59:59.000Z

4

PMC·I'Fl.  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

I'Fl. I'Fl. 1)··1.0) , u.s. DEPARTUENT OF ENERGY EERE PROJECT M ANAGEMENT CENTER NEPA DETERl\IINATION RECIPIENT:Escambia County PROJECT TITLE: Landfill Gas Extraction and Control System Expansion and Modernization Page I of2 STATE: FL Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number DE-FOA-0000013 DE-EE0000784 0 Based on my review of the information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 451.1A), I have made the following determination: CX, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling). document preparation (such as conceptual design or feasibility studies, analytical energy supply

5

Category:Tampa, FL | Open Energy Information  

Open Energy Info (EERE)

Tampa, FL" Tampa, FL" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Tampa FL Florida Power & Light Co..png SVFullServiceRestauran... 77 KB SVHospital Tampa FL Florida Power & Light Co..png SVHospital Tampa FL Fl... 80 KB SVLargeHotel Tampa FL Florida Power & Light Co..png SVLargeHotel Tampa FL ... 77 KB SVLargeOffice Tampa FL Florida Power & Light Co..png SVLargeOffice Tampa FL... 76 KB SVMediumOffice Tampa FL Florida Power & Light Co..png SVMediumOffice Tampa F... 78 KB SVMidriseApartment Tampa FL Florida Power & Light Co..png SVMidriseApartment Tam... 78 KB SVOutPatient Tampa FL Florida Power & Light Co..png SVOutPatient Tampa FL ... 77 KB SVPrimarySchool Tampa FL Florida Power & Light Co..png SVPrimarySchool Tampa ...

6

Category:Miami, FL | Open Energy Information  

Open Energy Info (EERE)

Miami, FL" Miami, FL" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Miami FL Florida Power & Light Co..png SVFullServiceRestauran... 77 KB SVHospital Miami FL Florida Power & Light Co..png SVHospital Miami FL Fl... 80 KB SVLargeHotel Miami FL Florida Power & Light Co..png SVLargeHotel Miami FL ... 78 KB SVLargeOffice Miami FL Florida Power & Light Co..png SVLargeOffice Miami FL... 76 KB SVMediumOffice Miami FL Florida Power & Light Co..png SVMediumOffice Miami F... 79 KB SVMidriseApartment Miami FL Florida Power & Light Co..png SVMidriseApartment Mia... 78 KB SVOutPatient Miami FL Florida Power & Light Co..png SVOutPatient Miami FL ... 77 KB SVPrimarySchool Miami FL Florida Power & Light Co..png SVPrimarySchool Miami ...

7

FL J. Smith, Jr.  

Office of Legacy Management (LM)

ct. B. Duillap ct. B. Duillap (THPJJs L. Kassel) FL J. Smith, Jr. c c Kelley from R. 1. Cook, Kslley from R. 1. Cook, J J cit cit In accordawe with Secret memorandum dated October , 1951 ta IA. E. In accordawe with Secret rwmorandnn dated October , 1951 ta IA. E. Qapletad Uranium for HAA and ML," we are Ylepletad Uranium for HAA and ML," we are obligated to fill the following orders obligated to fill the following orders North American Aviation North American Aviation . . One Inch roes One Inch roes a. Depleted U nrptalj U-235 content= 0.&9 f O.O& Meterial must be homogenemsj uniformity of assay, O&Q5%. : b. Diemeterc 0.99P (1( O.ooOn, - 0.003")j de-hrmd. YI E ,g C* pwh b" f1/32" Classification Cancelled d. Humber of rods: 1800

8

RECIPIENT:Lake County, FL  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Lake County, FL Lake County, FL u.s. DEPARTIIIEN T OF ENERGY EERE PROJECT MANAGEMENT CEN T ER NEPA DETERlIJJNATION PROJECf TITLE: Lake County, FL EECBG SOW (S) Page lof2 STATE: FL Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Numbcr CID Numbtr OE·FOA-OOOOO13 DE·EE00Q0786.001 0 Based on my review of the information concerning the proposed adion, as NEPA Compliance Officer (authorized undtr DOE Order 451.IA), I have made the following determination: ex. EA, EIS APPENDIX AND NUMBER: Description: 65.1 Actions to conserve energy, demonstrate potential energy conserva tion, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical

9

DOE - Office of Legacy Management -- Gardinier Inc - FL 05  

Office of Legacy Management (LM)

Gardinier Inc - FL 05 Gardinier Inc - FL 05 FUSRAP Considered Sites Site: GARDINIER, INC. ( FL.05 ) Eliminated from consideration under FUSRAP - Referred to EPA and State of Florida Designated Name: Not Designated Alternate Name: U. S. Phosphoric Products FL.05-1 Location: Tampa , Florida FL.05-2 Evaluation Year: 1984 FL.05-3 Site Operations: U. S. Phosphoric Products constructed and operated a small scale pilot plant for uranium recovery; and Gardinier investigated a process for the recovery of by-product uranium from wet process phosphoric acid. FL.05-1 FL.05-6 FL.05-7 Site Disposition: Eliminated - No Authority FL.05-3 FL.05-8 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium FL.05-6 FL.05-7 Radiological Survey(s): Yes FL.05-2

10

St. Petersburg, FL: Vehicle Use of Recycled Natural Gas Derived...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

St. Petersburg, FL: Vehicle Use of Recycled Natural Gas Derived from Wastewater Biosolids St. Petersburg, FL: Vehicle Use of Recycled Natural Gas Derived from Wastewater Biosolids...

11

DOE - Office of Legacy Management -- University of Florida - FL 09  

NLE Websites -- All DOE Office Websites (Extended Search)

Florida - FL 09 Florida - FL 09 FUSRAP Considered Sites Site: UNIVERSITY OF FLORIDA (FL.09) Eliminated from consideration under FUSRAP - Referred to NRC Designated Name: Not Designated Alternate Name: None Location: Gainesville , Florida FL.09-1 Evaluation Year: 1995 FL.09-1 Site Operations: Research and development using test quantities of radioactive metal. FL.09-2 Site Disposition: Eliminated - No Authority - NRC licensed FL.09-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Test Quantities of Uranium and Plutonium FL.09-2 Radiological Survey(s): None Indicated Site Status: Eliminated from consideration under FUSRAP - Referred to NRC FL.09-2 Also see Documents Related to UNIVERSITY OF FLORIDA FL.09-1 - DOE Letter; Wagoner to DeLaney; Subject: University of

12

DOE - Office of Legacy Management -- Humphreys Gold Co - FL 08  

Office of Legacy Management (LM)

Humphreys Gold Co - FL 08 Humphreys Gold Co - FL 08 FUSRAP Considered Sites Site: Humphreys Gold Co. (FL.08 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Jacksonville , Florida FL.08-1 Evaluation Year: 1987 FL.08-2 FL.08-3 Site Operations: Processed monazite ore in the 1950s. FL.08-3 Site Disposition: Eliminated - No Authority - No AEC involvement at the site FL.08-2 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Thorium FL.08-1 Radiological Survey(s): No Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to Humphreys Gold Co. FL.08-1 - AEC Memorandum; Edmonds to McCarvill; Subject: Monazite Dredging Operations and Placer Deposits Containing Thorium Minerals; June

13

Fl YO Co -op E athea lectric  

E-Print Network (OSTI)

are based on a false premise that the cost and usage pattern for energy in the Pacific Northwest should and Energy Efficiency The High Level indicator of "Regional Electricity Use per Person vs. US Average" shouldFl YO Co -op E athea lectric Community...Integrity...Reliability 2510 U.S. Highway 2 East

14

Washington, DC'  

Office of Legacy Management (LM)

of. Energy of. Energy Washington, DC' 26585 , The Honorable Gene Eriquez .~ City Hall I55 Deer Hill Avenue + Danbury/Connecticut 06180 .. -r. - Dear Mayor Eriquez: Secretary of Energy Hazel O!Leary has .announced a knew approach -to openness in. the Department of Energy (DOE) and its communications with the public. In support of th,is initiative, we are,pleased to forward the enclosed information, related to the former Sperry Products,'.Inc. site in your jurisdiction ,that performed,work for DOE or its predecessor agencies. Th,is informatipn is provided,for your information, use, and retenti~oh. DOE's Formeily Utilized Sites Remedial Action Program is responsible for. identification of sites used by'DOE's predecessor agencies, determining their current radiological condition and,

15

Bi-directional dc-dc Converter  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Nov Dec Phase II, Timeline 2009 Jan Feb Mar Apr May Jun Jul Aug Sep Vehicle Interface, FMEA and MTBF Dc-dc Fabrication Validation Data Performance Validation BOM and Cost analysis...

16

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

WWNA Monthly; Largo, FL WWNA Monthly; Largo, FL 7031-226 Accutest Job Number: F36361 Sampling Date: 11/03/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

17

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

Quarterly Sampling, STAR Center, Largo, FL Quarterly Sampling, STAR Center, Largo, FL 110406202 Accutest Job Number: F33211 Sampling Dates: 07/13/05 - 07/14/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable.

18

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

Quarterly Sampling, STAR Center, Largo, FL Quarterly Sampling, STAR Center, Largo, FL 7030-226 Accutest Job Number: F27229 Sampling Date: 10/07/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable.

19

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

WWNA Monthly; Largo, FL WWNA Monthly; Largo, FL 110406202 Accutest Job Number: F25982 Sampling Date: 08/10/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

20

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

WWNA Monthly; Largo, FL WWNA Monthly; Largo, FL 7030-226 Accutest Job Number: F33038 Sampling Date: 07/06/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Bi-directional dc-dc Converter  

Energy.gov (U.S. Department of Energy (DOE))

2009 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C.

22

Bi-directional dc-dc Converter  

Energy.gov (U.S. Department of Energy (DOE))

2010 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C.

23

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

2/04 2/04 Technical Report for S M Stoller Quarterly Sampling, STAR Center, Largo, FL 110406202 Accutest Job Number: F25409 Sampling Dates: 07/13/04 - 07/14/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable.

24

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

0/06 0/06 Technical Report for S M Stoller Quarterly Sampling, STAR Center, Largo, FL 110406202 Accutest Job Number: F39137 Sampling Dates: 03/08/06 - 03/09/06 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable.

25

FUPWG Meeting Agenda - Cape Canaveral, FL | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Cape Canaveral, FL Cape Canaveral, FL FUPWG Meeting Agenda - Cape Canaveral, FL October 7, 2013 - 3:00pm Addthis FUPWG Spring 2007 - Cocoa Beach, FL: Launching a New Era of Energy Efficiency" Hosted by: Florida Power and Light Company logo FEMP logo May 1-2, 2007 Hosted by Florida Power and Light Company Monday, April 30, 2007 5:00 - 6:30 Steering Committee meeting at Skylab/Atlas Conference Room, Doubletree Hotel 6:30 until... Networking dinner at 3 Wishes Restaurant, Doubletree Hotel Tuesday, May 1, 2007 7:45 - 8:30 Registration/Continental Breakfast 8:30 - 8:45 Florida Power & Light Welcome Marlene Santos, FPL Vice President of Customer Service 8:45 - 9:00 FEMP Welcome David McAndrew, FEMP 9:00 - 9:30 Washington Update David McAndrew, FEMP National Defense 2007 Authorization

26

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

7170 7170 Sampling Date: 10/05/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D. Laboratory Director e-Hardcopy 2.0 Automated Report 12 1 of 12

27

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

227 227 Sampling Dates: 03/31/04 - 04/01/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D. Laboratory Director e-Hardcopy 2.0 Automated Report

28

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

124 124 Sampling Date: 01/06/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D. Laboratory Director e-Hardcopy 2.0 Automated Report 18 1 of 18

29

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

531 531 Sampling Date: 04/16/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D. Laboratory Director e-Hardcopy 2.0 Automated Report 21 1 of 21

30

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

8014 8014 Sampling Date: 11/09/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D. Laboratory Director e-Hardcopy 2.0 Automated Report 12 1 of 12

31

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

623 Sampling Date: 020205 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ...

32

City of Quincy, FL Smart Grid Project | Open Energy Information  

Open Energy Info (EERE)

FL Smart Grid Project FL Smart Grid Project Jump to: navigation, search Project Lead City of Quincy, FL Country United States Headquarters Location Quincy, Florida Recovery Act Funding $2,471,041.00 Total Project Value $4,942,082.00 Coverage Area Coverage Map: City of Quincy, FL Smart Grid Project Coordinates 30.5871392°, -84.5832453° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[]}

33

RES D.C.  

Energy.gov (U.S. Department of Energy (DOE))

RES DC, hosted by the National Center for American Indian Enterprise Development (The National Center), will feature access to respected tribal leaders, members of congress, federal agency...

34

DOE - Office of Legacy Management -- Virginia-Carolina Chemical Corp - FL  

Office of Legacy Management (LM)

Virginia-Carolina Chemical Corp - Virginia-Carolina Chemical Corp - FL 06 FUSRAP Considered Sites Site: Virginia-Carolina Chemical Corp. (FL.06 ) Eliminated from consideration under FUSRAP - Referred to US EPA and State of Florida Designated Name: Not Designated Alternate Name: Conserv Corporation FL.06-1 Location: Nichols , Florida FL.06-2 Evaluation Year: 1985 FL.06-1 Site Operations: Process development studies and pilot plant testing of uranium recovery from phosphoric acid during the mid-1950s. Site Disposition: Eliminated - No Authority FL.06-1 FL.06-4 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium Radiological Survey(s): Yes FL.06-2 Site Status: Eliminated from consideration under FUSRAP - Referred to US EPA and State of Florida FL.06-1

35

DOE - Office of Legacy Management -- University of Miami - FL 0-01  

Office of Legacy Management (LM)

Miami - FL 0-01 Miami - FL 0-01 FUSRAP Considered Sites Site: UNIVERSITY OF MIAMI (FL.0-01 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Miami , Florida FL.0-01-1 Evaluation Year: 1987 FL.0-01-1 Site Operations: Research. FL.0-01-1 Site Disposition: Eliminated - Potential for contamination considered remote based on nature of the operations FL.0-01-1 Radioactive Materials Handled: None Indicated Primary Radioactive Materials Handled: None Indicated FL.0-01-1 Radiological Survey(s): No Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to UNIVERSITY OF MIAMI FL.0-01-1 - Aerospace Letter; Young to Wallo; Subject: Elimination Recommendation -- Colleges and Universities; September 23, 1987

36

FUPWG Meeting Agenda - Destin, FL | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Destin, FL Destin, FL FUPWG Meeting Agenda - Destin, FL October 7, 2013 - 2:56pm Addthis Going coastal for energy efficiency. FUPWG. April 15-16, 2008, Destin, Florida Gulf Power: A Southern Company FEMP logo April 15-16, 2008 Hosted by Gulf Power Monday, April 14, 2008 6:30 pm Steering Committee Meeting & Networking Dinner Ocean Club 8955 US Highway 98 W Miramar Beach, FL 32550 Tuesday, April 15, 2008 7:45 - 8:30 am Registration and Continental Breakfast 8:30 - 8:45 am Gulf Power Welcome P. Bernard Jacob, Customer Operations Vice President 8:45 - 9:15 am FEMP Welcome David McAndrew, FEMP 9:15 - 10:00 am Washington Update David McAndrew, FEMP 10:00 - 10:30 am Technology Update Paul Kistler 10:30 - 11:00 am Networking Break & New Member Mentor Introductions 11:00 - 11:30 am Gulf Power Success Story - NAS Chiller Replacement

37

The Florida State University Panama City, FL 32405-1099  

E-Print Network (OSTI)

The Florida State University Panama City, FL 32405-1099 Office of Student Affairs · 4750 Collegiate their October 3, 2005 MEMORANDUM TO: Faculty and Students, Panama City FROM: Melissa A. Jones, Director, Office of Student Affairs, Panama City RE: Special Instructions for Panama City Campus pertaining to the FSU

38

TRIBAL ISSUES TOPIC GROUP MEETING SUMMARY JACKSONVILLE, FL  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

JACKSONVILLE, FL JACKSONVILLE, FL JANUARY 20, 1999 Mr. Kevin Blackwell (USDOT/FRA) updated the group on the status of the DOT response to DOE's inquiry about the tribal right to inspect rail shipments. The response was in the final stages of review in the General Counsel's office and is expected by July 1999. The Group has added a representative from the NRC General Counsel's office, as a topic group member, to help keep abreast of developments in the NRC's upcoming draft rulemaking regarding tribes and advanced notification. The group also discussed the research that has been conducted on the issue of developing a "umbrella grant" from DOE to states and tribes. Tribes concerns differ from State concerns because of disparities in available infrastructure to administer grants and funding equity issues.

39

Multiplatform Dynamic System Simulation of a DC-DC Converter.  

E-Print Network (OSTI)

??The work presented in this paper focuses on the usability testing for the Open-Modelica. The modeling and simulation of the BMR450 DC-DC converter is also… (more)

Song, Wenpeng

2012-01-01T23:59:59.000Z

40

Washington. DC,20585  

Office of Legacy Management (LM)

Washington. DC,20585 Washington. DC,20585 MAY' i 1995 .- The Honorable Freeman R. Bosley, Jr. ' r City Hall 1200 Narket Street St. Louis, Missouri 63103 Dear Mayor Bosley: ,'~ ,. : !' Secretary of Energy Hazel O'Leary'has announced a new approach to'openness'in " the Department of,Energy"(DOE) and its communications with the pu~blic. In 'support of this initiative, we are pleased to forward the enclosed information rel,ated to the former Petrolite Corp. site in your jurisdiction that,performed, work for DDE or,i.ts predecessor agencies. your information, use, and retention. This information is provided for DDE's Formerly Utilized Sites Remedial Action Program is responsible for identification of sites used by DDE's predecessor agencies, determining their

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

I ' Washington, DC'  

Office of Legacy Management (LM)

' Washington, DC' ' Washington, DC' 20585 The.Honorable Don Trotter, 102' Public Square Clarksville, Tennessee '37040 '_ _' ' Dear Mayor Trotter: '. Secretary of Energy Hazel .O'Leary has announced a new the Department of Energy (DOE) and its communications support of this initiative, we are pleased to forward related to the Clarksville Foundry.& Machine Co. site approach to openness in with the publ,ic'. In " the~enclosed~information in your'jurisdiction that performed work for DOE or its predecessor'agencies. This information. is provided, for.your information, use, and retention. remedial action conservative' set of technical investigations to assure environment. If'you have any questions, please feel free~to call DrI W. Alexander Uilliams 301-427-1719 of my staff.

42

S M Stoller Star Center-B100 Monthly/Effluent; Largo, FL  

Office of Legacy Management (LM)

B100 Monthly/Effluent; Largo, FL B100 Monthly/Effluent; Largo, FL 7030-226 Accutest Job Number: F30882 Sampling Date: 04/06/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

43

S M Stoller Star Center-B100 Monthly/Effluent; Largo, FL  

Office of Legacy Management (LM)

B100 Monthly/Effluent; Largo, FL B100 Monthly/Effluent; Largo, FL 7030-226 Accutest Job Number: F29123 Sampling Date: 01/06/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

44

S M Stoller STAR Center- 4.5 Acre Site, Largo, FL  

Office of Legacy Management (LM)

STAR Center- 4.5 Acre Site, Largo, FL STAR Center- 4.5 Acre Site, Largo, FL 110406202 Accutest Job Number: F25243 Sampling Date: 07/06/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

45

S M Stoller STAR Center- 4.5 Acre Site, Largo, FL  

Office of Legacy Management (LM)

STAR Center- 4.5 Acre Site, Largo, FL STAR Center- 4.5 Acre Site, Largo, FL 7030-226/Monthly Accutest Job Number: F27168 Sampling Date: 10/05/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable.

46

S M Stoller Star Center-B100 Monthly/Effluent; Largo, FL  

Office of Legacy Management (LM)

B100 Monthly/Effluent; Largo, FL B100 Monthly/Effluent; Largo, FL 7031-226 Accutest Job Number: F35493 Sampling Date: 10/04/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

47

S M Stoller STAR Center- 4.5 Acre Site, Largo, FL  

Office of Legacy Management (LM)

STAR Center- 4.5 Acre Site, Largo, FL STAR Center- 4.5 Acre Site, Largo, FL 110406202 Accutest Job Number: F23552 Sampling Date: 04/20/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

48

E-Print Network 3.0 - aurigae fl lyrae Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Search Sample search results for: aurigae fl lyrae Page: << < 1 2 3 4 5 > >> 1 Astronomy C Tiger Invitational February 20, 2010 Summary: Astronomy C Tiger Invitational...

49

Performance Study of K2CsSb Photocathode inside a DC High Voltage Gun  

SciTech Connect

In the past decade, there has been considerable interest in the generation of tens of mA average current in a photoinjector. Until recently, GaAs:Cs cathodes and K2CsSb cathodes have been tested successfully in DC and RF injectors respectively for this application. Our goal is to test the GaAs:Cs in RF injector and the K2CsSb cathode in the DC gun in order to widen our choices. Since the multialkali cathode is a compound with uniform stochiometry over its entire thickness, we anticipate that the life time issues seen in GaAs:Cs due surface damage by ion bombardment would be minimized with this material. Hence successful operation of the K2CsSb cathode in DC gun could lead to a relatively robust electron source capable of delivering ampere level currents. In order to test the performance of K2CsSb cathode in a DC gun, we have designed and built a load lock system that would allow the fabrication of the cathode at BNL and its testing at JLab. In this paper, we will present the design of the load-lock system, cathode fabrication, and the cathode performance in the preparation chamber and in the DC gun.

T. Rao, J. Smedley, J.M. Grames, R. Mammei, J.L. McCarter, M. Poelker, R. Suleiman

2011-03-01T23:59:59.000Z

50

Departmentaf Energy Washington, DC  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Departmentaf Departmentaf Energy Washington, DC 20585 MAR 4 1998 MEMORANDUM FOR: James H. Chafin, AL Robert Fisher, CH Steven Hamel, OR William Daubenspeck, LL James Hanley, SAN Robert Southworth, RL Harold Dixon, SR \ Lisa Jarr, FETC"/"',,,-' ( ~ ( ) ( I C{ \'"~V FROM: Paul A. Gottlieb'<,. ~ ' \ Assistant General Counsel . for Technology Transfer / and Intellectual Property SUBJECT: U.S. Competitiveness Provision. Except for the cases discussed further below, attached is the U.S. Competitiveness provision which you should begin providing as our initial negotiating position to inventors/contractors requesting identified and, advance patent waivers. Of course, it is not· expected that every inventor/contractor will agree to the exact language in the provision, in which case modifications to the provision can be made. In those cases where substantial changes are contemplated,

51

Washington, DC,20585  

Office of Legacy Management (LM)

>/gGq ' >/gGq ' ,, ' .. Department of Edgy Washington, DC,20585 ,I ' , APR 0 4 1995 The Honorable Patrick Ungaro 26 S. Phelps Street Youngstown, Ohio 44503 .' Dear );layor.Ungaro: Secretary of'Energy Hazel O'Leary has announced a new approach to openness in the Oepartment of Energy (DOE) and its coannunications with the public. In support of this initiative, we are pleased to forward the,enclosed information related to the former Ajax-Hagnethermic C,orp. site in your jurisdiction that performed work for DOE's predecessoragencies. This information is~provided for your information, use, and retention. DOE's Formerly Utilized Sites Remedial Action Program is responsible for identificationof sites used by DOE's predecessor agencies, determining their current radiological condition and, where it has authority, performing-

52

D.C.  

NLE Websites -- All DOE Office Websites (Extended Search)

Future scientists advance to national Future scientists advance to national level April 3, 2012 Science Bowl winners represent NM in Washington, D.C. A team from Los Alamos bested 39 other teams from around New Mexico in the 10- hour New Mexico Regional Science Bowl, held recently at Albuquerque Academy. The team went on to represent New Mexico in the 22nd Annual Department of Energy (DOE) National Science Bowl. In addition to their travel expenses, the team also won $5,000 for their school. The team consists of students, Alexander Wang, Micha Ben-Naim, Scott Carlsten, Lorenzo Venneri and Kevin Gao, and Coach, Paolo Venneri. - 2 - Albuquerque Academy took second place and La Cueva High School in Albuquerque placed third in the "Jeopardy!"-style event. During the competition, students are asked

53

J25097-1 Fl_L2 Final Report  

Office of Legacy Management (LM)

5097-1 5097-1 Job Description: Star Center For: S.M. Stoller Corporation 2597 B 3/4 Road Grand Junction, CO 81503 Attention: Mr. Charles Tabor _____________________________________________ Nancy Robertson Project Manager II nancy.robertson@testamericainc.com 09/19/2008 Methods: FDEP, DOH Certification #: E84282, E81005, E81010 These test results meet all the requirements of NELAC unless specified in the case narrative. All questions regarding this test report should be directed to the TestAmerica Project Manager who signed this test report. The estimated uncertainty associated with these reported results is available upon request. The results contained in this test report relate only to these samples included herein. TestAmerica Laboratories, Inc. TestAmerica Tampa 6712 Benjamin Road, Suite 100, Tampa, FL 33634

54

Triple voltage dc-to-dc converter and method  

DOE Patents (OSTI)

A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

Su, Gui-Jia (Knoxville, TN)

2008-08-05T23:59:59.000Z

55

Catalog of DC Appliances and Power Systems  

E-Print Network (OSTI)

Appliance Efficient DC compatible replacement technology variable-speed compressor and fans run by brushless DC motor in place of single-speed compressors

Garbesi, Karina

2012-01-01T23:59:59.000Z

56

Dc's blog | OpenEI Community  

Open Energy Info (EERE)

The U.S. Department of Energy put out this short inspirational video about Women in Science, Technology, Engineering, and Mathematics (STEM). Dc's picture Submitted by Dc(55)...

57

Catalog of DC Appliances and Power Systems  

E-Print Network (OSTI)

by DC-indifferent electric resistance heating or by DC-and LED lamps Electric resistance heater Incandescentfluorescent or LED) Electric resistance Cooling Motors

Garbesi, Karina

2012-01-01T23:59:59.000Z

58

Mechanism of Nitric Oxide Reactivity and Fluorescence Enhancement of the NO-Specific Probe CuFL1  

E-Print Network (OSTI)

The mechanism of the reaction of CuFL1 (FL1 = 2-{2-chloro-6-hydroxy-5-[(2-methylquinolin-8-ylamino)methyl]-3-oxo-3H-xanthen-9-yl}benzoic acid) with nitric oxide (NO) to form the N-nitrosated product FL1-NO in buffered ...

McQuade, Lindsey E.

59

Performance Study of K2CsSb Photocathode Inside a DC High Voltage Gun  

SciTech Connect

In the past decade, there has been considerable interest in the generation of tens of mA average current in a photoinjector. Until recently, GaAs:Cs cathodes and K{sub 2}CsSb cathodes have been tested successfully in DC and RF injectors respectively for this application. Our goal is to test the K{sub 2}CsSb photocathode inside a DC gun. Since the multialkali cathode is a compound with constant characteristics over its entire thickness, we anticipate that the lifetime issues seen in GaAs:Cs due to surface damage by ion bombardment would be minimized. Hence successful operation of the K{sub 2}CsSb cathode in a DC gun could lead to a relatively robust electron source capable of delivering ampere level currents. In order to test the performance of a K{sub 2}CsSb cathode in a DC gun, we have designed and built a load lock system that allows the fabrication of the cathode at Brookhaven National Lab (BNL) and its testing at Jefferson Lab (JLab). In this paper, we will present the performance of the K{sub 2}CsSb photocathode in the preparation chamber and in the DC gun.

McCarter J. L.; Rao T.; Smedley, J.; Grames, J.; Mammei, R.; Poelker, M.; Suleiman, R.

2011-09-01T23:59:59.000Z

60

International Journal of Foundations of Computer Science fl World Scientific Publishing Company  

E-Print Network (OSTI)

International Journal of Foundations of Computer Science c fl World Scientific Publishing Company Science, University of Idaho Moscow, Idaho 83844­1010, USA and MOSHE DROR MIS Department, University

Krings, Axel W.

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design  

SciTech Connect

The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

2000-04-25T23:59:59.000Z

62

Light-weight DC to very high voltage DC converter  

DOE Patents (OSTI)

A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current.

Druce, Robert L. (Union City, CA); Kirbie, Hugh C. (Dublin, CA); Newton, Mark A. (Livermore, CA)

1998-01-01T23:59:59.000Z

63

Light-weight DC to very high voltage DC converter  

DOE Patents (OSTI)

A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current. 1 fig.

Druce, R.L.; Kirbie, H.C.; Newton, M.A.

1998-06-30T23:59:59.000Z

64

Switching coordination of distributed dc-dc converters for highly efficient photovoltaic power plants  

DOE Patents (OSTI)

A distributed photovoltaic (PV) power plant includes a plurality of distributed dc-dc converters. The dc-dc converters are configured to switch in coordination with one another such that at least one dc-dc converter transfers power to a common dc-bus based upon the total system power available from one or more corresponding strings of PV modules. Due to the coordinated switching of the dc-dc converters, each dc-dc converter transferring power to the common dc-bus continues to operate within its optimal efficiency range as well as to optimize the maximum power point tracking in order to increase the energy yield of the PV power plant.

Agamy, Mohammed; Elasser, Ahmed; Sabate, Juan Antonio; Galbraith, Anthony William; Harfman Todorovic, Maja

2014-09-09T23:59:59.000Z

65

Character of states near the Fermi level in (Ga,Mn)As: Impurity to valence band crossover RID E-6453-2010  

E-Print Network (OSTI)

We discuss the character of states near the Fermi level in Mn-doped GaAs, as revealed by a survey of dc transport and optical studies over a wide range of Mn concentrations. A thermally activated valence-band contribution to dc transport, a...

Jungwirth, T.; Sinova, Jairo; MacDonald, A. H.; Gallagher, B. L.; Novak, V.; Edmonds, K. W.; Rushforth, A. W.; Campion, R. P.; Foxon, C. T.; Eaves, L.; Olejnik, E.; Masek, J.; Yang, S-R Eric; Wunderlich, J.; Gould, C.; Molenkamp, L. W.; Dietl, T.; Ohno, H.

2007-01-01T23:59:59.000Z

66

High efficiency resonant dc/dc converter for solar power applications .  

E-Print Network (OSTI)

??This thesis presents a new topology for a high efficiency dc/dc resonant power converter that utilizes a resistance compression network to provide simultaneous zero voltage… (more)

Inam, Wardah

2013-01-01T23:59:59.000Z

67

DC systems with transformerless converters  

SciTech Connect

A technical and economic feasibility study of HVDC systems without converter transformers is presented. The presentation includes proposed solutions to the drawback related to the absence of galvanic separation between the ac and dc systems, if the converter transformers are eliminated. The results show that HVDC systems without converter transformers are both technically and economically feasible. The cost savings can be substantial.

Vithayathil, J.J.; Mittlestadt, W. [Bonneville Power Administration, Portland, OR (United States)] [Bonneville Power Administration, Portland, OR (United States); Bjoerklund, P.E. [ABB Power Systems AB, Ludvika (Sweden)] [ABB Power Systems AB, Ludvika (Sweden)

1995-07-01T23:59:59.000Z

68

NASA DC-8 Airborne Scanning Lidar System  

Science Journals Connector (OSTI)

A scanning lidar system is being developed for installation on the NASA DC-8 atmospheric research aircraft to support...in-situ aerosol and gas measurements. Design and objectives of the DC-8 scanning lidar are p...

Norman B. Nielsen; Edward E. Uthe…

1997-01-01T23:59:59.000Z

69

ARM - Campaign Instrument - dc8-nasa  

NLE Websites -- All DOE Office Websites (Extended Search)

govInstrumentsdc8-nasa Comments? We would love to hear from you Send us a note below or call us at 1-888-ARM-DATA. Send Campaign Instrument : NASA DC-8 (DC8-NASA) Instrument...

70

DC-DC converter current source fed naturally commutated brushless DC motor drive  

E-Print Network (OSTI)

, thereby generating switching losses and entail the use of large heatsinks. VSI needs a huge dc link capacitor that is inherently unreliable and is one of the most expensive components of a drive. Hence, a Current Source Inverter (CSI) is used to replace...

Khopkar, Rahul Vijaykumar

2004-11-15T23:59:59.000Z

71

Catalog of DC Appliances and Power Systems  

NLE Websites -- All DOE Office Websites (Extended Search)

Catalog of DC Appliances and Power Systems Catalog of DC Appliances and Power Systems Title Catalog of DC Appliances and Power Systems Publication Type Report LBNL Report Number LBNL-5364E Year of Publication 2011 Authors Garbesi, Karina, Vagelis Vossos, and Hongxia Shen Document Number LBNL-5364E Date Published October Publisher Lawrence Berkeley National Laboratory Abstract This document catalogs the characteristics of current and potential future direct current (DC) products and power systems. It is part of a larger U.S. Department of Energy-funded project, "Direct-DC Power Systems for Energy Efficiency and Renewable Energy Integration with a Residential and Small Commercial Focus". That project is investigating the energy-savings potential, benefits, and barriers of using DC generated by on-site renewable energy systems directly in its DC form, rather than converting it first to alternating current (AC) for distribution to loads. Two related reports resulted from this work: this Catalog and a companion report that addresses direct-DC energy savings in U.S. residential buildings.Interest in 'direct-DC' is motivated by a combination of factors: the very rapid increase in residential and commercial photovoltaic (PV) power systems in the United States; the rapid expansion in the current and expected future use of energy efficient products that utilize DC power internally; the demonstrated energy savings of direct-DC in commercial data centers; and the current emergence of direct-DC power standards and products designed for grid-connected residential and commercial products. Based on an in-depth study of DC appliances and power systems, we assessed off-grid markets for DC appliances, the DC compatibility of mainstream electricity end-uses, and the emerging mainstream market for direct-DC appliances and power systems.

72

Ecological benefits of dc power transmission  

SciTech Connect

The environmental effects of dc overhead transmission lines are examined. The major effects of ac and dc transmission lines are compared. Dc lines have advantages compared to ac lines in terms of electrical safety for people under the lines, biological effects, corona losses, and clearance width.

Kutuzova, N. B. [JSC 'NIIPT' (Russian Federation)

2011-05-15T23:59:59.000Z

73

Design and development of a DC-DC converter for a fuel cell inverter system  

E-Print Network (OSTI)

This thesis outlines the design and development of a DC-DC converter for a fuel cell inverter application. The proposed DC-DC converter was designed and tested at Texas A&M to meet the specifications laid down for the '2001 Future Energy Challenge...

Gopinath, Rajesh

2001-01-01T23:59:59.000Z

74

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

SciTech Connect

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

75

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

accomplishments accomplishments are impressive in themselves, and associ- ated with each milestone is the expansion of future produc- tion opportunities as another technical barrier is overcome. The extension of recovery opportunities into deep water has established the deep offshore as an area of considerable national significance. A second source of increased supply is gas from coalbed formations. Natural gas production from coalbed methane fields continued to grow in 1996 as projects initiated mainly in the early to mid 1990's matured through the dewatering phase into higher rates of gas production. Coalbed forma- tions contribute almost 1 trillion cubic feet, roughly 5 per- cent, to total U.S. production. Continued production growth from coalbeds is not likely in light of the precipitous drop in new wells completed in coalbed formations since the termination of the production tax

76

INTRODUCTION Since Zadeh [20] introduced Fuzzy Sets, many discussions have taken place whether Fuzzy Logic (FL) deserves a place  

E-Print Network (OSTI)

Fuzzy Logic (FL) deserves a place in control theory. Three properties speak in favour of FL control larger than the true maximal input for a system, Fuzzy Logic Controllers (FLC) by nature restrict A j x µ j x ( ) NLQ THEORY BASED STABILITY ANALYSIS OF SISO FUZZY LOGIC CONTROLLERS J�RGEN VAN GORP

77

THE FLORIDA STATE UNIVERSITY * THE GRADUATE SCHOOL * 314 WESTCOTT * TALLAHASSEE, FL. 32306-1410 Florida State University  

E-Print Network (OSTI)

THE FLORIDA STATE UNIVERSITY * THE GRADUATE SCHOOL * 314 WESTCOTT * TALLAHASSEE, FL. 32306 to gs-drg@admin.fsu.edu: Florida State University The Graduate School 314 Westcott Building Tallahassee be carried over. #12;THE FLORIDA STATE UNIVERSITY * THE GRADUATE SCHOOL * 314 WESTCOTT * TALLAHASSEE, FL

78

THE FLORIDA STATE UNIVERSITY * THE GRADUATE SCHOOL * 408 WESTCOTT * TALLAHASSEE, FL. 32306-1410 Florida State University  

E-Print Network (OSTI)

THE FLORIDA STATE UNIVERSITY * THE GRADUATE SCHOOL * 408 WESTCOTT * TALLAHASSEE, FL. 32306 Fellowship ­ Fall 2011 408 Westcott Building Tallahassee, Florida 32306-1410 Deadline The application STATE UNIVERSITY * THE GRADUATE SCHOOL * 408 WESTCOTT * TALLAHASSEE, FL. 32306-1410 Fall 2011 ***FOUR

Bowers, Philip L.

79

25th AIAA Applied Aerodynamics Conference June 2528, 2007/Miami, FL  

E-Print Network (OSTI)

25th AIAA Applied Aerodynamics Conference June 25­28, 2007/Miami, FL Validation Study of Aerodynamic Analysis Tools for Design Optimization of Helicopter Rotors Seongim Choi , Juan J. Alonso , Edwin current aerodynamic analysis tools in predicting the unsteady flow field generated by helicopter rotors

Alonso, Juan J.

80

St. Petersburg, FL: Vehicle Use of Recycled Natural Gas Derived from Wastewater Biosolids  

Energy.gov (U.S. Department of Energy (DOE))

Breakout Session 3A—Conversion Technologies III: Energy from Our Waste—Will we Be Rich in Fuel or Knee Deep in Trash by 2025? St. Petersburg, FL: Vehicle Use of Recycled Natural Gas Derived from Wastewater Biosolids William Eleazer, Supervising Engineer, Brown and Caldwell

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Deciduous Fruit Options for North FL Landscapes by Terry DelValle, Urban Horticulture Extension Agent  

E-Print Network (OSTI)

Deciduous Fruit Options for North FL Landscapes by Terry DelValle, Urban Horticulture Extension your homework first. Site Selection: Here is a list of criteria. Fruit require an open sunny spot/variety will get at matur- ity. Selecting Varieties: Select varieties adapted to our area. Deciduous fruit, also

Watson, Craig A.

82

Machine Learning, ??, 1--6 (1994) fl 1994 Kluwer Academic Publishers, Boston. Manufactured in The Netherlands.  

E-Print Network (OSTI)

Machine Learning, ??, 1--6 (1994) c fl 1994 Kluwer Academic Publishers, Boston. Manufactured in The Netherlands. Book Review: C4.5: Programs for Machine Learning by J. Ross Quinlan. Morgan Kaufmann Publishers are among the most well known and widely used of all machine learning methods. Among decision tree

Salzberg, Steven

83

DOE Zero Energy Ready Home Case Study: Southeast Volusia Habitat for Humanity, Edgewater, FL  

Energy.gov (U.S. Department of Energy (DOE))

Case study of a DOE Zero Energy Ready affordable home in Edgewater, FL, that achieves a HERS score of 49 without PV. The one-story, 1,250-ft2 home has 2x4 walls with fiberglass batt inside plus R-3...

84

DOE Zero Energy Ready Home Case Study, Manatee County Habitat for Humanity, Ellenton, FL, Affordable  

Energy.gov (U.S. Department of Energy (DOE))

Case-study of a DOE Zero Energy Ready Home in Ellenton, FL that scored HERS 53 without PV, HERS 23 with PV. This 1,143 ft2 affordable home has R-23 ICF walls, a spray-foamed sealed attic, solar hot water, and a ducted mini-split heat pump.

85

DOE Zero Energy Ready Home Case Study, e2Homes, Winterpark, FL, Custom Homes  

Energy.gov (U.S. Department of Energy (DOE))

Case study of a DOE Zero Energy Ready Home in Winter Park, FL that scored HERS 57 without PV or HERS -7 with PV. This 4,305 ft2 custom home has autoclaved aerated concrete walls, a sealed attic with R-20 spray foam, and ductless mini-split heat pumps.

86

ARTM E. MASUNOV 12424 Research Parkway, Suite 400, Orlando, FL 32826 USA  

E-Print Network (OSTI)

Professor, NanoScience Technology Center, Department of Chemistry, Department of Physics & Florida Solar Energy Center, University of Central Florida, FL (UCF) 2002-2005: Postdoctoral Research Associate, Russia (with Prof. P. M. Zorkii) #12;Dr. Artëm E. Masunov, UCF NSTC 2 Professional Societies: - American

Kik, Pieter

87

DC Distribution: The Power To Change Buildings  

NLE Websites -- All DOE Office Websites (Extended Search)

DC Distribution: The Power To Change Buildings DC Distribution: The Power To Change Buildings Speaker(s): Brian Patterson Dennis Symanski Liang Downey Date: July 14, 2011 - 12:00pm Location: 90-3122 Seminar Host/Point of Contact: Chris Marnay This seminar presents an overview of the effort to create new applications standards to drive the distribution and use of native direct current (dc) in net zero energy commercial and residential buildings. From the early days of electric power generation, distribution and use there's been a debate over which form of power, AC or DC, is best. Edison set the stage for this argument in the late 1800's with his invention of DC powered lighting systems. Tesla's system of AC dynamos, transformers and motors all but stopped the growing use of DC by the turn of the century. With the

88

Map Locating Berkeley Lab Washington, DC Office  

NLE Websites -- All DOE Office Websites (Extended Search)

WASHINGTON, DC PROJECTS OFFICE WASHINGTON, DC PROJECTS OFFICE Map LEGEND: A:Berkeley Lab DC Office; PNNL; NREL; ORNL | B: EPA Waterside Mall C: Metrorail Station: Smithsonian | D: Metrorail Station: L'Enfant Plaza Notice: Due to security requirements in the building, all visitors to the Berkeley Lab DC Projects Office must check in at the ground floor entrance. If you do not have a DOE access badge, you will need to obtain a building visitor badge. To expedite this process, visitors are encouraged to RSVP to their meeting host or call (202) 488-2250 ahead of time. Metal detectors and x-ray screening of personal items are required for all visitors and staff entering the building. Directions to the Lab's Washington, DC Projects Office 901 D Street, SW Suite 950 Washington, DC 20024 Phone/Fax: (202) 488-2250

89

Active dc filter for HVDC systems  

SciTech Connect

This article is a case history of the installation of active dc filters for high-performance, low-cost harmonics filtering at the Lindome converter station in the Konti-Skan 2 HVDC transmission link between Denmark and Sweden. The topics of the article include harmonics, interference, and filters, Lindome active dc filter, active dc filter design, digital signal processor, control scheme, protection and fault monitoring, and future applications.

Zhang, W. (Royal Inst. of Tech., Stockholm (Sweden)); Asplund, G.

1994-01-01T23:59:59.000Z

90

26 Tesla DC Magnet for Neutron Scattering  

NLE Websites -- All DOE Office Websites (Extended Search)

Previously, DC Magnets located at Neutron-Scattering Beamlines were commercially-manufactured superconducting magnets and limited to 17 T. A few pulsed magnet systems have been...

91

Glass Ceramic Dielectrics for DC Bus Capacitors  

Energy.gov (U.S. Department of Energy (DOE))

2010 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C.

92

Reliability Assessment of Fault-Tolerant Dc-Dc Converters for Photovoltaic Applications  

E-Print Network (OSTI)

Reliability Assessment of Fault-Tolerant Dc-Dc Converters for Photovoltaic Applications Sairaj V in photovoltaic energy processing applications is presented. The proposed approach acknowledges the influence through several case studies. Index Terms-- Markov reliability modeling, photovoltaic systems, power

Liberzon, Daniel

93

Radio frequency dc-dc converters : device characterization, topology evaluation, and design  

E-Print Network (OSTI)

High frequency power conversion is attractive for the opportunities it affords for improved performance. Dc-dc converters operating at high frequencies use smaller-valued energy storage elements, which tend to be physically ...

Leitermann, Olivia

2008-01-01T23:59:59.000Z

94

DC to DC power conversion module for the all-electric ship  

E-Print Network (OSTI)

The MIT end to end electric ship model is being developed to study competing electric ship designs. This project produced a model of a Power Conversion Module (PCM)- 4, DC-to-DC converter which interfaces with the MIT ...

Gray, Weston L

2011-01-01T23:59:59.000Z

95

Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption ''grading'' and multiplication regions  

SciTech Connect

We have measured the frequency response of InP/ InGaAsP/InGaAs photodiodes with separate absorption, ''grading,'' and multiplication regions (SAGM-APD's) for a wide range (2 less than or equal to M/sub 0/ less than or equal to 35) of dc gains. The results are explained in terms of a theoretical model which incorporates the transit time of carriers through the depletion region, the RC time constant, the accumulation of holes at the valence band discontinuity of the heterojunction interfaces, and the gainbandwidth limit.

Campbell, J.C.; Dentai, A.G.; Holden, W.S.; Qua, G.J.

1985-11-01T23:59:59.000Z

96

Washington, DC~ZO585  

Office of Legacy Management (LM)

jpfl.3%2' jpfl.3%2' ) .,Departhent of Eikrgj! : Washington, DC~ZO585 .-, , , Lf; I: ~.1,' .Yj4 , The Honorable Louis Barlup 55 ,E. Main Street Waynesboro;,Pennsy,lvania 17268 '~ Dear Mayor Barl,up:' Secretary of Energy Hazel O'Leary has'announced' a new approach to openness,in the Department of Energy-(DOE) and its communications with the public. In support-of this initiative, we are pleased.to forward the enclosed information related to the former Landis Machine Tool Co. site in your jurisdiction that performed work for DOE or its predecessor agencies. This information:is provided for your information< use, and retention. DOE's Formerly Utilized Sites Remedial Action Program is responsible for identification of sites used by DOE's predecessor agencies, determining their

97

High voltage DC power supply  

DOE Patents (OSTI)

A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively. 7 figs.

Droege, T.F.

1989-12-19T23:59:59.000Z

98

High voltage DC power supply  

DOE Patents (OSTI)

A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively.

Droege, Thomas F. (Batavia, IL)

1989-01-01T23:59:59.000Z

99

DOE - Office of Legacy Management -- Naval Research Laboratory - DC 02  

Office of Legacy Management (LM)

Research Laboratory - DC 02 Research Laboratory - DC 02 FUSRAP Considered Sites Site: NAVAL RESEARCH LABORATORY (DC.02 ) Eliminated from consideration under FUSRAP - Referred to DOD Designated Name: Not Designated Alternate Name: None Location: Washington , D.C. DC.02-4 Evaluation Year: 1987 DC.02-4 Site Operations: Research and development on thermal diffusion. DC.02-4 Site Disposition: Eliminated - No Authority - AEC licensed - Military facility DC.02-4 DC.02-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium, Thorium DC.02-2 DC.02-3 Radiological Survey(s): None Indicated Site Status: Eliminated from consideration under FUSRAP - Referred to DOD DC.02-4 Also see Documents Related to NAVAL RESEARCH LABORATORY DC.02-1 - AEC Memorandum and Source Material License No. C-3393;

100

GY EERE PROJECT MANAGEMENT CENTER NEPA DETERMINATION RECIPIENT:County of Escambia. FL  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

, , ... ~. u.s. DEPAR n-IENT OF ENER GY EERE PROJECT MANAGEMENT CENTER NEPA DETERMINATION RECIPIENT:County of Escambia. FL PROJECT TITLE: Road Prison Geothermal Earth Coupled HVAC Upgrade Page 1 of2 STATE: FL Funding Opportunity Announcement Numbtr Procurement Instrument Number NEPA Control Number CID Number DE-FOA-OOOOO13 DE-EEOOOO764.oo1 0 Based on my review of the information concerning the proposed action. as NEPA Compliance Officer (authorized under DOE Order 451.IA), I have made the following determination; ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

File:USDA-CE-Production-GIFmaps-FL.pdf | Open Energy Information  

Open Energy Info (EERE)

FL.pdf FL.pdf Jump to: navigation, search File File history File usage Florida Ethanol Plant Locations Size of this preview: 463 × 599 pixels. Other resolution: 464 × 600 pixels. Full resolution ‎(1,275 × 1,650 pixels, file size: 274 KB, MIME type: application/pdf) Description Florida Ethanol Plant Locations Sources United States Department of Agriculture Related Technologies Biomass, Biofuels, Ethanol Creation Date 2010-01-19 Extent State Countries United States UN Region Northern America States Florida External links http://www.nass.usda.gov/Charts_and_Maps/Ethanol_Plants/ File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 16:12, 27 December 2010 Thumbnail for version as of 16:12, 27 December 2010 1,275 × 1,650 (274 KB) MapBot (Talk | contribs) Automated bot upload

102

u.s. DEPARTMENT OF ENERGY EERE PROJECT MANAGEMENT CENTER NFPA DETElU.flNATION  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

DETElU.flNATION DETElU.flNATION RECIPIENT: lowa State University PROJE(.T TITLE: An Undergraduate Minor in Wind Energy Science, Engineering, and Policy Page 1 of2 STATE : IA Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number DE-FOA..()()()()()9() DE-EEOOO3549 GFO-l0-497 0 Based on my review orlhe inrormation concerning the proposed action, 85 NEPA Compliance Officer (authorized under DOE Order 451.IA), I have made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply and

103

Washington, DC | Building Energy Codes Program  

NLE Websites -- All DOE Office Websites (Extended Search)

Washington, DC Washington, DC Last updated on 2013-08-02 Current News In December, the DC CCCB voted 7-1 to adopt the 2012 IECC. The code will now enter administrative review and legislative process with likely adoption in the second half of 2013. Commercial Residential Code Change Current Code ASHRAE Standard 90.1-2007 with Amendments Amendments / Additional State Code Information Based on 2008 DC Construction Code with several amendments. State Specific Research Impacts of ASHRAE 90.1-2007 for Commercial Buildings in the District of Columbia (BECP Report, Sept. 2009) Approximate Energy Efficiency Equivalent to ASHRAE 90.1-2007 Effective Date 12/26/2009 Adoption Date 12/26/2008 Code Enforcement Mandatory DOE Determination ASHRAE 90.1-2007: Yes ASHRAE 90.1-2010: No DC DOE Determination Letter, May 31, 2013

104

Design Concepts for RF-DC Conversion in Particle Accelerator Systems  

E-Print Network (OSTI)

In many particle accelerators considerable amounts of RF power reaching the megawatt level are converted into heat in dummy loads. After an overview of RF power in the range 200 MHz to 1 GHz dissipated at CERN we discuss several developments that have come up in the past using vacuum tube technology for RF-DC conversion. Amongst those the developments of the cyclotron wave converter CWC appears most suitable. With the availability of powerful Schottky diodes the solid state converter aspect has to be addressed as well. One of the biggest problems of Schottky diode based structures is the junction capacity. GaAs and GaN Schottky diodes show a significant reduction of this junction capacity as compared to silicon. Small rectenna type converter units which have been already developed for microwave powered helicopters can be used in waveguides or with coaxial power dividers.

Caspers, F; Grudiev, A; Sapotta, H

2010-01-01T23:59:59.000Z

105

A Review of DC Micro-grid Protection  

Science Journals Connector (OSTI)

In this paper, an overview of DC micro-grid is described, which includes the status of DC micro-grid protection and its future development. The paper presents the key techniques of DC micro-grid protection. So fa...

Yuhong Xie; Jia Ning; Yanquan Huang…

2013-01-01T23:59:59.000Z

106

Research on Energy Efficiency of DC Distribution System  

Science Journals Connector (OSTI)

Abstract Energy efficiency of DC distribution systems is researched in this paper. Efficiency calculation models of feeders and loads are established, efficiencies of AC/DC, DC/DC and DC/AC are analyzed. Moreover, energy efficiencies of an AC system and two DC systems, monopole and bipolar, are calculated and compared. The efficiency improvement of office building supplied by DC power system compared to supply by AC power system is demonstrated. From analysis, it is showed that the energy efficiency is higher in DC distribution system than AC distribution system.

Zifa Liu; Mengyu Li

2014-01-01T23:59:59.000Z

107

8798_FL  

NLE Websites -- All DOE Office Websites (Extended Search)

The Movie . . . . . . . . . . . . . . . . . 8 Simulation Matches Historic Gamma-Ray Burst. . . . . . . . . . . . . . . . 11 Nearby Supernova Factory Churns Out Discoveries...

108

News From the D.C. Office  

NLE Websites -- All DOE Office Websites (Extended Search)

3 Aerial view of Washington D.C. 3 Aerial view of Washington D.C. News From the D.C. Office The federal government is the largest single purchaser in the world for many energy-related products. Federal buying power-along with that of state and local agencies-represents a largely untapped resource to increase the energy efficiency of consumer products and commercial equipment. LBL is helping the DOE Federal Energy Management Program (FEMP) develop and lead a government-wide initiative to capture this market-transforming opportunity. Jeff Harris and others in LBL's D.C. office are heading FEMP's efforts to identify how future federal purchases can be more energy-efficient. The U.S. government spends more than $70 billion a year to purchase supplies and equipment, of which an estimated $10-20 billion are energy-

109

D.C. | OpenEI Community  

Open Energy Info (EERE)

94 94 Varnish cache server Home Groups Community Central Green Button Applications Developer Utility Rate FRED: FRee Energy Database More Public Groups Private Groups Features Groups Blog posts Content Stream Documents Discussions Polls Q & A Events Notices My stuff Energy blogs 429 Throttled (bot load) Error 429 Throttled (bot load) Throttled (bot load) Guru Meditation: XID: 2142234494 Varnish cache server D.C. Home Kyoung's picture Submitted by Kyoung(155) Contributor 6 September, 2012 - 08:51 GRR Update Meeting scheduled for 9/13 in D.C. D.C. GRR meeting update The next Geothermal Regulatory Roadmap update meeting will be held in Washington, D.C. on Thursday, September 13 from 2-4 p.m. Syndicate content 429 Throttled (bot load) Error 429 Throttled (bot load) Throttled (bot load) Guru Meditation:

110

DC readout experiment in Enhanced LIGO  

E-Print Network (OSTI)

The two 4 km long gravitational wave detectors operated by the Laser Interferometer Gravitational-wave Observatory (LIGO) were modified in 2008 to read out the gravitational wave channel using the DC readout form of homodyne ...

Fricke, Tobin T

111

Sandia National Laboratories: DC power optimizers  

NLE Websites -- All DOE Office Websites (Extended Search)

DC power optimizers Sandia R&D Funded under New DOE SunShot Program On November 27, 2013, in Energy, News, News & Events, Partnership, Photovoltaic, Renewable Energy, Solar,...

112

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

NLE Websites -- All DOE Office Websites (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

113

Recovery Act State Memos Washington, DC  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Washington, DC Washington, DC For questions about DOE's Recovery Act activities, please contact the DOE Recovery Act Clearinghouse: 1-888-DOE-RCVY (888-363-7289), Monday through Friday, 9 a.m. to 7 p.m. Eastern Time https://recoveryclearinghouse.energy.gov/contactUs.htm. All numbers and projects listed as of June 1, 2010 TABLE OF CONTENTS RECOVERY ACT SNAPSHOT................................................................................... 1 FUNDING ALLOCATION TABLE.............................................................................. 2 ENERGY EFFICIENCY ............................................................................................... 3 RENEWABLE ENERGY ............................................................................................. 5

114

GaN High Power Devices  

SciTech Connect

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

115

Simulations for preliminary design of a multi-cathode DC electron gun for eRHIC  

SciTech Connect

The proposed electron ion collider, eRHIC, requires a large average polarized electron current of 50 mA, which is more than 20 times higher than the present experimental output of a single, highly polarized electron source, based on cesiated super-lattice GaAs. To meet eRHIC's requirement for current, we designed a multicathode DC electron gun for injection. The twenty-four GaAs cathodes emit electrons in sequence, then are combined on axis by a rotating field (or 'funnelled'). In addition to its ultra-high vacuum requirements, the multicathode DC electron gun will place high demand on the electric field symmetry, the magnetic field shielding, and on preventing arcing. In this paper, we discuss our results from a 3D simulation of the latest model for this gun. The findings will guide the actual design in future. Their preliminary design of a multi-cathode electron source for eRHIC demonstrated tolerable fields and reasonable results in both field and particle simulations.

Wu, Q.; Ben-Zvi, I.; Chang, X.; Skaritka, J.

2010-05-23T23:59:59.000Z

116

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

117

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

118

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name: GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and...

119

DC's Marble ceiling : urban height and its regulation in Washington, DC  

E-Print Network (OSTI)

Washington, DC has a unique urban form that is the result of a century-old law. Through the narrow lens of DC's height limit, I survey a range of topics related to urban height, starting with a review of its history of ...

Trueblood, Andrew Tyson

2009-01-01T23:59:59.000Z

120

FC/Battery Power Management for Electric Vehicle Based Interleaved dc-dc Boost Converter Topology  

E-Print Network (OSTI)

FC/Battery Power Management for Electric Vehicle Based Interleaved dc- dc Boost Converter Topology power systems in electric vehicle application, in order to decrease the FC current ripple. Therefore the performance of the FC system during transient and instantaneous peak power demands in electric vehicle

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Method to Improve Total Dose Radiation Hardness in a CMOS dc-dc Boost  

E-Print Network (OSTI)

in a wide range of radiation environment, with increasing total dose radiation, The efticieney also greatlyMethod to Improve Total Dose Radiation Hardness in a CMOS dc-dc Boost Converter Huadian Pan to natural radiation in space. Among the effects of ionizing radiation are shiftsin threshold voltageand

Wilamowski, Bogdan Maciej

122

5 kW Multilevel DC-DC Converter for Hybrid Electric and Fuel Cell Automotive  

E-Print Network (OSTI)

automobile, there are many electrical loads grouped into two main categories depending on the voltages5 kW Multilevel DC-DC Converter for Hybrid Electric and Fuel Cell Automotive Applications Faisal H. Khan1,2 Leon M. Tolbert2 fkhan3@utk.edu tolbert@utk.edu 1 Electric Power Research Institute (EPRI) 2

Tolbert, Leon M.

123

E&nr Ph. S. W.. Wahhgt~n. D.C. 200242174, TIkpbnc (202) 48a60uo  

Office of Legacy Management (LM)

75' 75' 00.955 L' E&nr Ph. S. W.. Wahhgt~n. D.C. 200242174, TIkpbnc (202) 48a60uo 7117-03.87.cdy.43 23 September 1987 CR CA.d M r. Andrew Wallo, III, NE-23 Division of Facility & Site Decoaunissioning Projects U.S. Department of Energy Germantown, Maryland 20545 Dear M r. Wallo: ELIMINATION RECOMMENDATION -- COLLEGES AND UNIVERSITIES M /4.0-03 kl 77.0% I - The attached elimination reconunendation was prepared in accordance rlL.0~ with your suggestion during our meeting on 22 September. The recommendation flO.o-02 includes 26 colleges and universities identified.in Enclosure 4 to Aerospace letter subject: Status of Actions - FUSRAP Site List, dated N0.03. 27 May 1987; three institutions (Tufts College, University of Virginia, rJCDCJ/ and the University of Washington) currently identified on the FUSRAP

124

Pulsed dc self-sustained magnetron sputtering  

SciTech Connect

The magnetron sputtering has become one of the commonly used techniques for industrial deposition of thin films and coatings due to its simplicity and reliability. At standard magnetron sputtering conditions (argon pressure of {approx}0.5 Pa) inert gas particles (necessary to sustain discharge) are often entrapped in the deposited films. Inert gas contamination can be eliminated during the self-sustained magnetron sputtering (SSS) process, where the presence of the inert gas is not a necessary requirement. Moreover the SSS process that is possible due to the high degree of ionization of the sputtered material also gives a unique condition during the transport of sputtered particles to the substrate. So far it has been shown that the self-sustained mode of magnetron operation can be obtained using dc powering (dc-SSS) only. The main disadvantage of the dc-SSS process is its instability related to random arc formation. In such case the discharge has to be temporarily extinguished to prevent damaging both the magnetron source and power supply. The authors postulate that pulsed powering could protect the SSS process against arcs, similarly to reactive pulsed magnetron deposition processes of insulating thin films. To put this concept into practice, (i) the high enough plasma density has to be achieved and (ii) the type of pulsed powering has to be chosen taking plasma dynamics into account. In this article results of pulsed dc self-sustained magnetron sputtering (pulsed dc-SSS) are presented. The planar magnetron equipped with a 50 mm diameter and 6 mm thick copper target was used during the experiments. The maximum target power was about 11 kW, which corresponded to the target power density of {approx}560 W/cm{sup 2}. The magnetron operation was investigated as a function of pulse frequency (20-100 kHz) and pulse duty factor (50%-90%). The discharge (argon) extinction pressure level was determined for these conditions. The plasma emission spectra (400-410 nm range) and deposition rates were observed for both dc and pulsed dc self-sustained sputtering processes. The pulse characteristics of the voltage and current of the magnetron source during pulsed dc-SSS operation are shown. The presented results illustrate that a stable pulsed dc-SSS process can be obtained at a pulsing frequency in the range of 60-90 kHz and duty factor of 80%-90%.

Wiatrowski, A.; Posadowski, W. M.; Radzimski, Z. J. [Faculty of Microsystems, Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Silicon Quest International, Santa Clara, California (United States)

2008-09-15T23:59:59.000Z

125

Good Energies (Washington DC) | Open Energy Information  

Open Energy Info (EERE)

Energies (Washington DC) Energies (Washington DC) Name Good Energies (Washington DC) Address 1250 24th St., NW, Suite 250 Place Washington, District of Columbia Zip 20037 Product Global investor in renewable energy and energy efficiency industries Year founded 2001 Phone number (202) 747-2550 Website http://www.goodenergies.com/ Coordinates 38.90649°, -77.051534° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":38.90649,"lon":-77.051534,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

126

New Experimental Data in DC745U  

SciTech Connect

The objectives of this project are: (1) study the molecular and mechanical properties of DC745U - (a) DC745U is a silicone elastomer used in several weapons systems, (b) depending on their chemistry and formulation, polymers can be susceptible to damage and failures due to weak chemical linkages and physical interactions, (c) inefficient production processes can generate heterogeneities throughout the material that can contribute negatively to the overall performance and lifetime of the polyer, (d) aging, long-term thermal and radioactive conditions, and mechanical strains can affect the materials network structure and contribute to the degradation of the production; (2) characterization of DC745U materials cured under different conditions to determine possible differences to the polymer structure; and (3) this work is relevant to mission-critical programs and for supporting programmatic work for weapon research.

Ortiz-Acosta, Denisse [Los Alamos National Laboratory; Cady, Carl [Los Alamos National Laboratory; Densmore, Crystal [Los Alamos National Laboratory

2012-06-18T23:59:59.000Z

127

DC transformer for DC/DC connection in HVDC network M. Jimenez Carrizosa1, A. Benchaib2, P. Alou3, G. Damm4  

E-Print Network (OSTI)

DC transformer for DC/DC connection in HVDC network M. Jim´enez Carrizosa1, A. Benchaib2, P. Alou3>>, >, HVDC>>, > . Abstract This paper presents the modeling and control for the integration of an offshore wind farm in a High Voltage Direct Current (HVDC). Until developed of VSC (voltage

Paris-Sud XI, Université de

128

Beta decay of Ga-62  

E-Print Network (OSTI)

We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

129

J14252-1 FL Level 2 Rpt PQL Final Report.pdf  

Office of Legacy Management (LM)

660-14252-1 660-14252-1 Job Description: Pinellas Annual Sampling For: S.M. Stoller Corporation 2597 B 3/4 Road Grand Junction, CO 81503 Attention: Mr. Charles Tabor Nancy Robertson Project Manager II nrobertson@stl-inc.com 03/29/2007 Methods: FDEP, DOH Certification #: E84282 These test results meet all the requirements of NELAC unless specified in the case narrative. All questions regarding this test report should be directed to the STL Project Manager who signed this test report. The estimated uncertainty associated with these reported results is available upon request. Project Manager: Nancy Robertson STL Tampa 6712 Benjamin Road Suite 100, Tampa, FL 33634 Tel (813) 885-7427 Fax (813) 885-7049 www.stl-inc.com Severn Trent Laboratories, Inc. Page 1 of 37 Page 2 of 37

130

DOE Challenge Home Case Study, Manatee County Habitat for Humanity, Ellenton, FL, Affordable  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Manatee County Manatee County Habitat for Humanity Ellenton, FL BUILDING TECHNOLOGIES OFFICE DOE Challenge Home builders are in the top 1% of builders in the country meeting the extraordinary levels of excellence and quality specifi ed by the U.S. Department of Energy. Every DOE Challenge Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Then, even more advanced technologies are designed in for a home that goes above and beyond current code to give you the superior quality construction, HVAC, appliances, indoor air quality, safety, durability, comfort, and solar-ready components along with ultra-low or no utility bills. This provides homeowners with a quality home that will last for generations to come.

131

Eliza Liu Leader Electronics Inc. 4FL, No.3, Lane 45, Pao Hsin Rd.  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Eliza Liu Eliza Liu Leader Electronics Inc. 4FL, No.3, Lane 45, Pao Hsin Rd. Hsin Tein, Taipei, (23 1) Taiwan, R.O.C Dear Ms. Liu: The attached notice advises you of the Department of Energy's (DOE) determination that certain products manufactured by Leader Electronics Inc. (L-E-I) do not comply with applicable energy conservation standards in the United States. The notice also advises you of your legal obligations. This determination stems from the certification reports filed by L-E-I pursuant to 10 C.F.R. § 430.62 (a)(4)(ix) regarding the performance of external power supplies manufactured by L-E-I. Violations of the applicable energy efficiency standards may be subject to civil penalties. Separate from this notice, DOE may issue a notice of civil penalty for such penalties as

132

Perseus LLC (Washington DC) | Open Energy Information  

Open Energy Info (EERE)

DC) DC) Jump to: navigation, search Logo: Perseus LLC (Washington DC) Name Perseus LLC (Washington DC) Address 2099 Pennsylvania Avenue, N.W., 9th Floor Place Washington, District of Columbia Zip 20006 Product Private equity fund Year founded 1995 Phone number (202) 452-0101 Website http://www.perseusllc.com/ Coordinates 38.901462°, -77.046347° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":38.901462,"lon":-77.046347,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

133

FEDERAL ENERGY WASHINGTON, D.C. 20426  

E-Print Network (OSTI)

FEDERAL ENERGY REGULATORY COMMISSION WASHINGTON, D.C. 20426 NEWS RELEASE NEWS MEDIA CONTACT judge, the Federal Energy Regulatory Commission today ordered an expedited fact-finding hearing of the discussions. #12;Chairman Curt L. Hébert, Jr. stated as follows: "At some point, regulatory and R-01-33 (more

Laughlin, Robert B.

134

Halbach array DC motor/generator  

DOE Patents (OSTI)

A new configuration of DC motor/generator is based on a Halbach array of permanent magnets. This motor does not use ferrous materials so that the only losses are winding losses and losses due to bearings and windage. An "inside-out" design is used as compared to a conventional motor/generator design. The rotating portion, i.e., the rotor, is on the outside of the machine. The stationary portion, i.e., the stator, is formed by the inside of the machine. The rotor contains an array of permanent magnets that provide a uniform field. The windings of the motor are placed in or on the stator. The stator windings are then "switched" or "commutated" to provide a DC motor/generator much the same as in a conventional DC motor. The commutation can be performed by mechanical means using brushes or by electronic means using switching circuits. The invention is useful in electric vehicles and adjustable speed DC drives.

Merritt, Bernard T. (Livermore, CA); Dreifuerst, Gary R. (Livermore, CA); Post, Richard F. (Walnut Creek, CA)

1998-01-01T23:59:59.000Z

135

Proceedings of the US Hydrographic Conference, Tampa, FL, 25-28 Apr 2011 THE PORT OF NORFOLK PROJECT  

E-Print Network (OSTI)

Proceedings of the US Hydrographic Conference, Tampa, FL, 25-28 Apr 2011 1 THE PORT OF NORFOLK for the Port of Norfolk Project are to explore viable methods of improvement with respect to both the process intuitive fashion, or providing it in a format that is inherently more useful. The Port of Norfolk Project

New Hampshire, University of

136

Machine Learning, 30, 241--273 (1998) fl 1998 Kluwer Academic Publishers, Boston. Manufactured in The Netherlands.  

E-Print Network (OSTI)

Machine Learning, 30, 241--273 (1998) c fl 1998 Kluwer Academic Publishers, Boston. Manufactured of a machine­aided knowledge discovery process within the general area of drug design. Within drug design study reported in this paper supports four general lessons for machine learning and knowledge discovery

Page Jr., C. David

137

A Three-Phase Bidirectional DC-DC Converter for Automotive Applications  

SciTech Connect

This paper presents a three-phase soft-switching, bidirectional dc-dc converter for high-power automotive applications. The converter employs dual three-phase active bridges and operates with a novel asymmetrical but fixed duty cycle for the top and bottom switches of each phase leg. Simulation and experimental data on a 6-kW prototype are included to verify the novel operating and power flow control principles.

Su, Gui-Jia [ORNL; Tang, Lixin [ORNL

2008-01-01T23:59:59.000Z

138

Federal Government Congressional Budget Office, Budget Analysis Division Washington, DC  

E-Print Network (OSTI)

Administration, Center for Drug Evaluation and Research Washington, DC Federal Energy Regulatory CommissionFederal Government Congressional Budget Office, Budget Analysis Division Washington, DC Department Environmental Protection Agency, Office of Transportation & Air Quality Ann Arbor, MI Federal Drug

Shyy, Wei

139

National Small Business Federal Contracting Summit-DC Fall Conference...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

National Small Business Federal Contracting Summit-DC Fall Conference National Small Business Federal Contracting Summit-DC Fall Conference November 6, 2014 8:00AM to 4:00PM EST...

140

DC High School Science Bowl Regionals | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

DC High School Science Bowl Regionals DC High School Science Bowl Regionals February 22, 2014 1:15PM to 8:15PM EST Department of Energy headquarters - 1000 Independence Ave SW,...

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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141

GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study  

SciTech Connect

The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

2010-10-14T23:59:59.000Z

142

A Cascade Multilevel Inverter Using a Single DC Source  

E-Print Network (OSTI)

A Cascade Multilevel Inverter Using a Single DC Source Zhong Du1, Leon M. Tolbert2 3, John N inverter can be implemented using only a single DC power source and capacitors. A standard cascade multilevel inverter requires DC sources for 2 + 1 levels. Without requiring transformers, the scheme proposed

Tolbert, Leon M.

143

Data:2e82dc6a-a54a-4043-8315-13718801ef05 | Open Energy Information  

Open Energy Info (EERE)

dc6a-a54a-4043-8315-13718801ef05 dc6a-a54a-4043-8315-13718801ef05 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Modesto Irrigation District Effective date: 2011/01/01 End date if known: Rate name: Schedule FL Flat Rate Service-Not Exceeding 50% Load Factor 1001 - 1200 Watt Sector: Commercial Description: Applicability This Schedule is applicable to small, constant, non-metered incidental loads for utilities, communication agencies, state agencies, and applicable special districts where the customer owns and maintains the equipment. The customer must supply equipment wattage to the District. Such loads would include: Cathodic Protection Stations Motor Radial Gates Pressure Point Automatic Watering Systems Flashing Beacons Sign Illumination Communication Power Booster Devices Monthly Usage: 282kWh

144

Notices 888 First Street, NE., Washington, DC  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

11 Federal Register 11 Federal Register / Vol. 76, No. 122 / Friday, June 24, 2011 / Notices 888 First Street, NE., Washington, DC 20426. The filings in the above-referenced proceeding are accessible in the Commission's eLibrary system by clicking on the appropriate link in the above list. They are also available for review in the Commission's Public Reference Room in Washington, DC. There is an eSubscription link on the Web site that enables subscribers to receive e-mail notification when a document is added to a subscribed docket(s). For assistance with any FERC Online service, please e-mail FERCOnlineSupport@ferc.gov or call (866) 208-3676 (toll free). For TTY, call (202) 502-8659. Dated: June 20, 2011. Kimberly D. Bose, Secretary. [FR Doc. 2011-15859 Filed 6-23-11; 8:45 am]

145

Notices 888 First Street NE., Washington, DC  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

53 Federal Register 53 Federal Register / Vol. 78, No. 56 / Friday, March 22, 2013 / Notices 888 First Street NE., Washington, DC 20426. This filing is accessible on-line at http://www.ferc.gov, using the ''eLibrary'' link and is available for review in the Commission's Public Reference Room in Washington, DC. There is an ''eSubscription'' link on the Web site that enables subscribers to receive email notification when a document is added to a subscribed docket(s). For assistance with any FERC Online service, please email FERCOnlineSupport@ferc.gov, or call (866) 208-3676 (toll free). For TTY, call (202) 502-8659. Comment Date: 5:00 p.m. Eastern Time on April 2, 2013. Dated: March 15, 2013. Kimberly D. Bose, Secretary. [FR Doc. 2013-06602 Filed 3-21-13; 8:45 am] BILLING CODE 6717-01-P

146

RECIPIENT:Gwinnett Co, GA  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

147

Novel GaAs Devices  

Science Journals Connector (OSTI)

As the dimensions of GaAs devices shrink, the effective electron velocity should increase, leading to a shorter transit time and to a ballistic or near-ballistic mode of operation (see Chapter 2). At the same ...

Michael Shur

1987-01-01T23:59:59.000Z

148

AVTA: Hasdec DC Fast Charging Testing Results  

Energy.gov (U.S. Department of Energy (DOE))

The Vehicle Technologies Office's Advanced Vehicle Testing Activity carries out testing on a wide range of advanced vehicles and technologies on dynamometers, closed test tracks, and on-the-road. These results provide benchmark data that researchers can use to develop technology models and guide future research and development. The following report describes results from testing done on the Hasdec DC fast charging system for plug-in electric vehicles. This research was conducted by Idaho National Laboratory.

149

DC side filters for multiterminal HVDC systems  

SciTech Connect

Multiterminal HVDC systems present challenges in the specification and design of suitable dc side filtering. This document examines the existing experience and addresses the particular technical problems posed by multiterminal systems. The filtering requirements of small taps are discussed, as is the potential use of active filters. Aspects of calculation and design are considered and recommendations made to guide the planners and designers of future multiterminal schemes.

Shore, N.L.; Adamson, K.; Bard, P. [and others] [and others

1996-10-01T23:59:59.000Z

150

Energy Incentive Programs, Washington DC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Washington DC Washington DC Energy Incentive Programs, Washington DC October 29, 2013 - 11:29am Addthis Updated August 2013 What public-purpose-funded energy efficiency programs are available in the District of Columbia? In 2008, the Council of the District of Columbia passed the Clean and Affordable Energy Act (CAEA), establishing the DC Sustainable Energy Utility (DC SEU), whose mission is to provide energy assistance to low-income residents and support energy efficiency and renewable energy programs. The DC SEU, funded by the Sustainable Energy Trust Fund (also created by the CAEA) and under contract to the District Department of the Environment (DDOE), helps District residents, businesses, and institutions save energy and money. The DC SEU provides comprehensive energy services to targeted, prioritized

151

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

152

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

153

NOT SPECIFIED IOTHER AMINDMENT 01' SOUCITAnONIMOD1FlCAnON OF CONTRACT I  

NLE Websites -- All DOE Office Websites (Extended Search)

SPECIFIED IOTHER SPECIFIED IOTHER AMINDMENT 01' SOUCITAnONIMOD1FlCAnON OF CONTRACT I I COH'IRACT ID COOl! I PAGE OF PAGU 1 1 2 2. AIIPDMENTlMOOIRCAlION NO. ~. EFFECTIVE DATI! 4 R£QUISmoNIPURCHASE REa. NO. IS.PR04CTNO.tII~' 068 See Block 16C 09SCOOl502 .~ .. , ClOIHI 00518 '.110 BY (I1G111Or """ Qfftt e) cooa 100518 Oak Ridge Oak Ridge U.S. Department of Energy U.S. Department of Energy P.O. Box 2001 P.O. Box 2001 oak Ridge TN 37831 Oak Ridge TN 37831 * IWIIi AHD ADQIWi5 OF COHrRACrn)RINO. _~ ao.IIPCOIIU ~ IIA. ANlHaawn OF ICUClTA'hOH HO. o AX RIDGE ASSOCIATED UNIVERSITIES, INC. P.O. BOX 117 II.DA1m(SEEne.u H, AX RIDGE TN 37830-6218 o " 1M. ~!!.CA~ OF COH1RACfIOAIlERHO. DE-ACOS-060R23100 lOB. DATED (Ull "

154

Comparison of Chloroflexus aurantiacus strain J-10-fl proteomes of cells grown chemoheterotrophically and photoheterotrophically  

SciTech Connect

Chloroflexus aurantiacus J-10-fl is a thermophilic green bacterium, a filamentous anoxygenic phototroph, and the model organism of the phylum Chloroflexi. We applied high-throughput, liquid chromatography-mass spectrometry in a global quantitative proteomics investigation of C. aurantiacus cells grown under oxic (chemoorganoheterotrophically) and anoxic (photoorganoheterotrophically) redox states. Our global analysis identified 13,524 high-confidence peptides that matched to 1,286 annotated proteins, 242 of which were either uniquely identified or significantly increased in abundance under anoxic culture conditions. Fifty-three of the 242 proteins are previously characterized photosynthesis-related proteins, including chlorosome proteins, proteins involved in the bacteriochlorophyll biosynthesis, 3-hydroxypropionate (3-OHP) CO2 fixation pathway, and components of electron transport chains. The remaining 190 proteins have not previously been reported. Of these, five proteins were found to be encoded by genes from a novel operon and observed only in photoheterotrophically grown cells. These proteins candidates may prove useful in further deciphering the phototrophic physiology of C. aurantiacus and other filamentous anoxygenic phototrophs.

Cao, Li; Bryant, Donald A.; Schepmoes, Athena A.; Vogl, Kajetan; Smith, Richard D.; Lipton, Mary S.; Callister, Stephen J.

2012-01-17T23:59:59.000Z

155

New leading/trailing edge modulation strategies for two-stage AC/DC PFC adapters to reduce DC-link capacitor ripple current  

E-Print Network (OSTI)

AC/DC adapters mostly employ two-stage topology: Power Factor Correction (PFC) pre-regulation stage followed by an isolated DC/DC converter stage. Low power AC/DC adapters require a small size to be competitive. Among their components, the bulk DC...

Sun, Jing

2007-09-17T23:59:59.000Z

156

US. DEPARTMENT OF ENERGY EE RE PROJ ECT MANAGEMENT CENTER NEPA DE'l'flU..nNATION  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

!. !. US. DEPARTMENT OF ENERGY EE RE PROJ ECT MANAGEMENT CENTER NEPA DE'l'flU..nNATION Page 1 of2 RECIPIENT:Pineitas County Board of County Commissioners STATE: Fl PROJEc.T TITLE: Clearwater Campus District Cooling - Activity 3 Geothermal Test Bores Funding Opportunity Announ~ement Number DE-FOA-OOOOO13-000002 Procurement Instrument Number DE -EEOOOO795.003 NEPA Control Number GF0-0000795-003 cm Number G0795 Based on my review of the information ~oncerning the propos~ action, as NE PA Compliance Officer (authorized under DOE Order 451.IA), I have made t he following determination: ex, EA, [IS APPENDIX AND NUMBER: Description: 8 3. 1 Site characterizatio n .n. en vironmental monit oring A9 Information gathering, analysis, and

157

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

SciTech Connect

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

158

High Efficiency Large Area AlGaAs/GaAs Concentrator Solar Cells  

Science Journals Connector (OSTI)

A 1-kWp ( peak at 100 mw/cm2 incident power dencity ) concentrating photovoltaic array with 180 square Presnel plastic lenses and AlGaAs/GaAs concentrator solar cells has been constructed. The AlGaAs/GaAs concetr...

S. Yoshida; K. Mitsui; T. Oda; Y. Yukimoto…

1981-01-01T23:59:59.000Z

159

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response  

E-Print Network (OSTI)

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 Received 27 infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

Jalali. Bahram

160

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network (OSTI)

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Fun D.C. Jobs for Physicists  

SciTech Connect

Physicists make valuable contributions in a wide variety of careers, including those in Washington. Many national challenges, including energy, innovation, and security, create a demand for technically-competent individuals across government. Clark will discuss some of the many programs in D.C. designed to attract the best and brightest minds, from grad-students to professors, from short-term assignments to whole new careers. These are great opportunities to use your expertise and enrich your knowledge of the broader scientific enterprise, all while serving society.

Clark Cully

2009-09-30T23:59:59.000Z

162

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network (OSTI)

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

Atwater, Harry

163

A miniature transformer/dc?dc converter for implantable medical devices  

Science Journals Connector (OSTI)

This paper presents a new technique for the design of a miniature dc?dc converter used in energy producing implantable devices such as defibrillators and advanced pacemakers. This converter is inserted in such a device and is used to boost the voltage from a low voltage implanted battery to high voltage energy storage capacitors in a short period of time. The stored energy is then delivered when needed through an energy delivery circuit in order to stimulate or defibrillate the heart. The converter takes the form of a flyback topology which includes a miniature transformer and a specialized control circuit. The transformer was designed using a new numerical synthesis method which utilizes finite elements and dynamic programming for predicting the geometries of the transformer’s magnetic circuit. The final transformer design satisfied the performance criteria and provided means for selecting the converter components. The obtained performance results for the transformer and the dc?dc converter were in excellent agreement with laboratory performance tests.

Osama A. Mohammed; W. Kinzy Jones

1988-01-01T23:59:59.000Z

164

Wide input range DC-DC converter with digital control scheme  

E-Print Network (OSTI)

boost converter a battery or ultracapacitor energy storage is connected to take care of the fuel cell slow transient response (200 watts/min). The robust features of the proposed control system ensure a constant output DC voltage for a variety of load...

Harfman Todorovic, Maja

2006-04-12T23:59:59.000Z

165

Washington DC's First Electric Vehicle Charging Station | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Washington DC's First Electric Vehicle Charging Station Washington DC's First Electric Vehicle Charging Station Washington DC's First Electric Vehicle Charging Station November 17, 2010 - 11:28am Addthis Street signage for Washington, DC's first electric vehicle charging station located on the northwest corner of the intersection of U and 14th streets. | Department of Energy Photo | Street signage for Washington, DC's first electric vehicle charging station located on the northwest corner of the intersection of U and 14th streets. | Department of Energy Photo | Shannon Brescher Shea Communications Manager, Clean Cities Program It's always exciting to attend a grand opening, especially when it represents a "first" for an entire region. Yesterday, the U.S. Department of Energy and the city of Washington, DC joined together to

166

GaAs–based quantum cascade lasers  

Science Journals Connector (OSTI)

...N. Murdin GaAs-based quantum cascade lasers Sirtori H. Page C. Becker...state-of-the-art of GaAs-based quantum cascade lasers. These new light sources...2000.0739 GaAs-based quantum cascade lasers By C. Sirtori, H. Page...

2001-01-01T23:59:59.000Z

167

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

168

DC Bus Capacitor Manufacturing Facility for Electric Drive Vehicles  

Energy.gov (U.S. Department of Energy (DOE))

2010 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C.

169

DC Resistivity Survey (Wenner Array) At Mt Princeton Hot Springs...  

Open Energy Info (EERE)

Determination of groundwater flux patterns Notes Researchers measured DC resistivity and produced 12 resistivity profiles, each approximately 1.3 km in length. Equilibrium...

170

Low Cost, High Temperature, High Ripple Current DC Bus Capacitors  

Energy.gov (U.S. Department of Energy (DOE))

2010 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C.

171

Exploring the Raft River geothermal area, Idaho, with the dc...  

Open Energy Info (EERE)

geothermal area, Idaho, with the dc resistivity method (Abstract) Abstract GEOTHERMAL ENERGY; GEOTHERMAL FIELDS; ELECTRICAL SURVEYS; IDAHO; GEOTHERMAL EXPLORATION; RAFT RIVER...

172

Coulomb excitation of 73Ga  

E-Print Network (OSTI)

The B(E2; Ii -> If) values for transitions in 71Ga and 73Ga were deduced from a Coulomb excitation experiment at the safe energy of 2.95 MeV/nucleon using post-accelerated beams of 71,73Ga at the REX-ISOLDE on-line isotope mass separator facility. The emitted gamma rays were detected by the MINIBALL-detector array and B(E2; Ii->If) values were obtained from the yields normalized to the known strength of the 2+ -> 0+ transition in the 120Sn target. The comparison of these new results with the data of less neutron-rich gallium isotopes shows a shift of the E2 collectivity towards lower excitation energy when adding neutrons beyond N = 40. This supports conclusions from previous studies of the gallium isotopes which indicated a structural change in this isotopical chain between N = 40 and N = 42. Combined with recent measurements from collinear laser spectroscopy showing a 1/2- spin and parity for the ground state, the extracted results revealed evidence for a 1/2-; 3/2- doublet near the ground state in 73 31Ga42 differing by at most 0.8 keV in energy.

J. Diriken; I. Stefanescu; D. Balabanski; N. Blasi; A. Blazhev; N. Bree; J. Cederkäll; T. E. Cocolios; T. Davinson; J. Eberth; A. Ekström; D. V. Fedorov; V. N. Fedosseev; L. M. Fraile; S. Franchoo; G. Georgiev; K. Gladnishki; M. Huyse; O. V. Ivanov; V. S. Ivanov; J. Iwanicki; J. Jolie; T. Konstantinopoulos; Th. Kröll; R. Krücken; U. Köster; A. Lagoyannis; G. Lo Bianco; P. Maierbeck; B. A. Marsh; P. Napiorkowski; N. Patronis; D. Pauwels; P. Reiter; M. Seliverstov; G. Sletten; J. Van de Walle; P. Van Duppen; D. Voulot; W. B. Walters; N. Warr; F. Wenander; K. Wrzosek

2010-10-13T23:59:59.000Z

173

Department.,of Energy Washington; DC'  

Office of Legacy Management (LM)

,of Energy ,of Energy Washington; DC' 20585 JAN 1 1 1995 / .,, .- L ., The Honorable Thomas Menino ', 1 City Hall Square Boston, Massachusetts 02201 ,'. " p' ifi.. ' . .' b I,' \ Dear.Mayor.Me$ino: DOE's Formerly Util,ized for identification of sites.used by*DOEfs predecessor' agencies, determining, their current radiological condition and, where it has authority, performing remedial action to cleanup sites to meet current radiologicalprotection requirements.~ A conservative set of.technical evaluation guidelines4s used in these investigat~ions' toTassure protection of public health, safety and the .environment. Where DOE does not have authority.for proceeding, the available site information is forwarded to the appropriate Federal or State Agency,. DOE studied the historical records of the former ,Tracerlab, Inc. sitei'and it

174

National Press Club Washington, D.C.  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Is the Energy Race our new Is the Energy Race our new "Sputnik" Moment? National Press Club Washington, D.C. 29 November, 2010 1 October 4, 1957, the Soviet Union placed a 184 pound satellite into orbit. "The Soviet Union now has - in the combined category of scientists and engineers - a greater number than the United States. And it is producing graduates in these fields at a much faster rate ... This trend is disturbing. Indeed, according to my scientific advisers, this is for the American people the most critical problem of all. My scientific advisers place this problem above all other immediate tasks of producing missiles, of developing new techniques in the Armed Services. We need scientists in the ten years ahead..." On November 13, 1957, President Eisenhower

175

Dissipative Cryogenic Filters with Zero DC Resistance  

SciTech Connect

The authors designed, implemented and tested cryogenic RF filters with zero DC resistance, based on wires with a superconducting core inside a resistive sheath. The superconducting core allows low frequency currents to pass with negligible dissipation. Signals above the cutoff frequency are dissipated in the resistive part due to their small skin depth. The filters consist of twisted wire pairs shielded with copper tape. Above approximately 1 GHz, the attenuation is exponential in {radical}{omega}, as typical for skin depth based RF filters. By using additional capacitors of 10 nF per line, an attenuation of at least 45 dB above 10 MHz can be obtained. Thus, one single filter stage kept at mixing chamber temperature in a dilution refrigerator is sufficient to attenuate room temperature black body radiation to levels corresponding to 10 mK above about 10 MHz.

Bluhm, Hendrik; Moler, Kathryn A.; /Stanford U., Appl. Phys. Dept

2008-04-22T23:59:59.000Z

176

Charakterisierung und Präparation von GaN und Herstellung von In-Plane-Gate Transistoren in AlxGa1-xN/GaN Heterostrukturen.  

E-Print Network (OSTI)

??Gegenstand der Arbeit sind GaN-Volumenmaterial und AlxGa1-xN/GaN HEMTs (high electron mobility transistor), welche ein zweidimensionales Elektronengas (2DEG) besitzen. Die Materialien wurden durch elektrische Messungen, insbesondere… (more)

Ebbers, André

2003-01-01T23:59:59.000Z

177

D.C. Water Resources Research Center Annual Technical Report  

E-Print Network (OSTI)

years. We are in negotiation with BenTen Inc., a Japanese water purification system manufacturerD.C. Water Resources Research Center Annual Technical Report FY 2007 D.C. Water Resources Research of the District of Columbia (DC) Water Resources Research Institute (the Institute) for the period of March 1

178

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

179

Stabilization of unstable periodic orbits in dc drives  

E-Print Network (OSTI)

Electric drive using dc shunt motor or permanent magnet dc (PMDC) motor as prime mover exhibits bifurcation and chaos. The characteristics of dc shunt and PMDC motors are linear in nature. These motors are controlled by pulse width modulation (PWM) technique with the help of semiconductor switches. These switches are nonlinear element that introduces nonlinear characteristics in the drive. Any nonlinear system can exhibit bifurcation and chaos. dc shunt or PMDC drives show normal behavior with certain range of parameter values. It is also observed that these drive show chaos for significantly large ranges of parameter values. In this paper we present a method for controlling chaos applicable to dc shunt and PMDC drives. The results of numerical investigation are presented.

Krishnendu Chakrabarty; Urmila Kar

2014-02-22T23:59:59.000Z

180

Definition: DC Resistivity Survey (Dipole-Dipole Array) | Open Energy  

Open Energy Info (EERE)

DC Resistivity Survey (Dipole-Dipole Array) DC Resistivity Survey (Dipole-Dipole Array) Jump to: navigation, search Dictionary.png DC Resistivity Survey (Dipole-Dipole Array) The Dipole-Dipole array is a type of electrode configuration for a Direct-Current Resistivity Survey and is defined by its electrode array geometry.[1] View on Wikipedia Wikipedia Definition References ↑ http://appliedgeophysics.berkeley.edu/dc/EM46.pdf Ret LikeLike UnlikeLike You like this.Sign Up to see what your friends like. rieved from "http://en.openei.org/w/index.php?title=Definition:DC_Resistivity_Survey_(Dipole-Dipole_Array)&oldid=596974" Category: Definitions What links here Related changes Special pages Printable version Permanent link Browse properties 429 Throttled (bot load) Error 429 Throttled (bot load) Throttled (bot load)

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
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We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys  

Science Journals Connector (OSTI)

Using large (512-atom) pseudopotential supercell calculations, we have investigated the composition dependence of the momentum matrix element Mv,c for transitions between the valence-band maximum and the conduction-band minimum of three semiconductor alloys:?GaP1-xNx and GaAs1-xNx, exhibiting large chemical and size differences between their alloyed elements, and GaP1-xAsx, which is a weakly perturbed alloy. In the composition ranges where these alloys have a direct band gap, we find that (i) in GaP1-xAsx, Mv,c is large (like the virtual-crystal value) and nearly composition independent; (ii) in GaAs1-xNx, Mv,c is strongly composition dependent: large for small x and small for large x; and (iii) in GaP1-xNx, Mv,c is only slightly composition dependent and is significantly reduced relative to the virtual-crystal value. The different behavior of GaP1-xAsx, GaP1-xNx, and GaAs1-xNx is traced to the existence/absence of impurity levels at the dilute alloy limits: (a) there are no gap-level impurity states at the x?1 or x?0 limits of GaP1-xAsx, (b) an isolated As impurity in GaN (GaN?:As) has a deep band gap impurity level but no deep impurity state is found for N in GaAs, and (c) GaN?:P exhibits a P-localized deep band-gap impurity state and GaP?:N has an N-localized resonant state. The existence of deep levels leads to wave-function localization in real space, thus to a spectral spread in momentum space and to a reduction of Mv,c. These impurity levels are facilitated by atomic relaxations, as evident by the fact that unrelaxed GaN?:As and GaN?:P, show no deep levels, have extended wave functions, and have large interband transition elements.

L. Bellaiche; Su-Huai Wei; Alex Zunger

1997-10-15T23:59:59.000Z

182

Data:4a6dc4d3-60de-422a-a2bd-da5815194aa5 | Open Energy Information  

Open Energy Info (EERE)

dc4d3-60de-422a-a2bd-da5815194aa5 dc4d3-60de-422a-a2bd-da5815194aa5 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Washington Elec Member Corp Effective date: End date if known: Rate name: Rate-14 (MS) Sector: Description: Available in all territory served by the Cooperative, subject to the Cooperative's established Service Rules and Regulations, and subject to the execution of a contract for service mutually agreed upon by the Cooperative and the consumer. Source or reference: http://facts.psc.state.ga.us/Public/GetDocument.aspx?ID=129296 Source Parent: Comments rates have been redacted

183

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

184

Ferromagnetic behavior of the Kondo lattice compound Np2PtGa3  

Science Journals Connector (OSTI)

Here we report on a study of the ternary Np2PtGa3 compound. The x-ray-powder diffraction analysis reveals that the compound crystallizes in the orthorhombic CeCu2-type crystal structure (space group Imma) with lattice parameters a=0.4409(2) nm, b=0.7077(3) nm, and c=0.7683(3) nm at room temperature. The measurements of dc magnetization, specific heat, and electron transport properties in the temperature range 1.7–300 K and in magnetic fields up to 9 T imply that this intermetallic compound belongs to a class of ferromagnetic Kondo systems. The Curie temperature of TC? 26 K is determined from the magnetization and specific-heat data. An enhanced coefficient of the electronic specific heat ? = 180 mJ/(mol at. Np K2) and a ?lnT dependence of the electrical resistivity indicate the presence of a Kondo effect, which can be described in terms of the S=1 underscreened Kondo-lattice model. The estimated Kondo temperature TK?24 K, Hall mobility of ?16.8 cm2/V s, and effective mass of ?83me are consistent with an assumption that the heavy-fermion state develops in Np2PtGa3 at low temperatures. We compare the observed properties of Np2PtGa3 to that found in Np2PdGa3 and discuss their difference in regard to change in the exchange interaction between the conduction and localized 5f electrons. We have used the Fermi wave vector kF to evaluate the Rudermann-Kittel-Kasuya-Yosida (RKKY) exchange. Based on experimental data of the (U, Np)2(Pd, Pt)Ga3 compounds we suggest that the evolution of the magnetic ground states in these actinide compounds can be explained within the RKKY formalism.

V. H. Tran; J.-C. Griveau; R. Eloirdi; E. Colineau

2014-02-21T23:59:59.000Z

185

Data:64340f38-6dc2-4fbb-b11e-2ae816e3baed | Open Energy Information  

Open Energy Info (EERE)

40f38-6dc2-4fbb-b11e-2ae816e3baed 40f38-6dc2-4fbb-b11e-2ae816e3baed No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Cobb Electric Membership Corp Effective date: 2006/01/01 End date if known: Rate name: Outdoor Lighting Overhead Service HPS 1000 W FL Additional Fixture Sector: Lighting Description: Pole Contributions Wood 30' $246.00 Wood 35' $297.00 Wood 40' $382.00 Wood 45' $424.00 Source or reference: https://www.cobbemc.com/~/media/Files/CEMC/PDFs/2012%20PDF/233%20Lighting%20Rates%202012.pdf Source Parent: Comments Applicability Demand (kW) Minimum (kW): Maximum (kW): History (months): Energy (kWh)

186

Data:D89dc81e-628b-4221-b91d-a8a7761be095 | Open Energy Information  

Open Energy Info (EERE)

dc81e-628b-4221-b91d-a8a7761be095 dc81e-628b-4221-b91d-a8a7761be095 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: City of Concord, North Carolina (Utility Company) Effective date: 2012/10/01 End date if known: Rate name: REPS Rider- Residential Sector: Residential Description: Service supplied to the City's retail customers is subject to a REPS Monthly Charge applied to each customer agreement for service on a residential, general service, or industrial service rate schedule. This charge is adjusted annually, pursuant to North Carolina General Statute 62-133.8 and North Carolina Utilities Commission Rule R8-67 as ordered by the North Carolina Utilities Commission. This Rider is not applicable to agreements for the City's outdoor lighting rate schedules, OL, PL, or FL, nor for services defined as auxiliary to another agreement. An auxiliary service is defined as a non-demand metered, nonresidential service, at the same premises, and with the same service address and same account name as the customer of record.

187

Data:61fa820f-07d1-4241-a53a-6dc1bce26e20 | Open Energy Information  

Open Energy Info (EERE)

fa820f-07d1-4241-a53a-6dc1bce26e20 fa820f-07d1-4241-a53a-6dc1bce26e20 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Cobb Electric Membership Corp Effective date: 2006/01/01 End date if known: Rate name: Outdoor Lighting Overhead Service MH 1000 W FL Additional Fixture Sector: Lighting Description: Pole Contributions Wood 30' $246.00 Wood 35' $297.00 Wood 40' $382.00 Wood 45' $424.00 Source or reference: https://www.cobbemc.com/~/media/Files/CEMC/PDFs/2012%20PDF/233%20Lighting%20Rates%202012.pdf Source Parent: Comments Applicability Demand (kW) Minimum (kW): Maximum (kW): History (months): Energy (kWh)

188

Counterrotating brushless dc permanent magnet motor  

SciTech Connect

An brushless DC permanent magnet motor is provided for driving an autonomous underwater vehicle. In one embodiment, the motor comprises four substantially flat stators disposed in stacked relationship, with pairs of the stators being axially spaced and each of the stators comprising a tape-wound stator coil; and a first and second substantially flat rotors disposed between the spaced pairs of stators. Each of the rotors includes an annular array of permanent magnets embedded therein. A first shaft is connected to the first rotor and a second, concentric shaft is connected to the second rotor, and drive unit causes rotation of the two shafts in opposite directions. The second shaft comprises a hollow tube having a central bore therein in which the first shaft is disposed. Two different sets of bearings support the first and second shAfts. In another embodiment, the motor comprises two ironless stators and pairs and rotors mounted no opposite sides of the stators and driven by counterrotating shafts.

Hawsey, R.A.; Bailey, J.M.

1990-12-31T23:59:59.000Z

189

Counterrotating brushless dc permanent magnet motor  

SciTech Connect

An brushless DC permanent magnet motor is provided for driving an autonomous underwater vehicle. In one embodiment, the motor comprises four substantially flat stators disposed in stacked relationship, with pairs of the stators being axially spaced and each of the stators comprising a tape-wound stator coil; and a first and second substantially flat rotors disposed between the spaced pairs of stators. Each of the rotors includes an annular array of permanent magnets embedded therein. A first shaft is connected to the first rotor and a second, concentric shaft is connected to the second rotor, and drive unit causes rotation of the two shafts in opposite directions. The second shaft comprises a hollow tube having a central bore therein in which the first shaft is disposed. Two different sets of bearings support the first and second shAfts. In another embodiment, the motor comprises two ironless stators and pairs and rotors mounted no opposite sides of the stators and driven by counterrotating shafts.

Hawsey, R.A.; Bailey, J.M.

1990-01-01T23:59:59.000Z

190

We Have a Winner - DC High School Regional Science Bowl Competition...  

Office of Environmental Management (EM)

We Have a Winner - DC High School Regional Science Bowl Competition Held Last Saturday We Have a Winner - DC High School Regional Science Bowl Competition Held Last Saturday...

191

DC Resistivity Survey (Dipole-Dipole Array) | Open Energy Information  

Open Energy Info (EERE)

DC Resistivity Survey (Dipole-Dipole Array) DC Resistivity Survey (Dipole-Dipole Array) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Technique: DC Resistivity Survey (Dipole-Dipole Array) Details Activities (1) Areas (1) Regions (0) NEPA(0) Exploration Technique Information Exploration Group: Geophysical Techniques Exploration Sub Group: Electrical Techniques Parent Exploration Technique: Electrical Profiling Configurations Information Provided by Technique Lithology: Rock composition, mineral and clay content Stratigraphic/Structural: Detection of permeable pathways, fracture zones, faults Hydrological: Resistivity influenced by porosity, grain size distribution, permeability, fluid saturation, fluid type and phase state of the pore water Thermal: Resistivity influenced by temperature

192

DC Hazardous Waste Management (District of Columbia) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

DC Hazardous Waste Management (District of Columbia) DC Hazardous Waste Management (District of Columbia) DC Hazardous Waste Management (District of Columbia) < Back Eligibility Utility Fed. Government Commercial Agricultural Investor-Owned Utility State/Provincial Govt Industrial Construction Municipal/Public Utility Local Government Residential Installer/Contractor Rural Electric Cooperative Tribal Government Low-Income Residential Schools Retail Supplier Institutional Multi-Family Residential Systems Integrator Fuel Distributor Nonprofit General Public/Consumer Transportation Program Info State District of Columbia Program Type Environmental Regulations Provider District Department of the Environment This regulation regulates the generation, storage, transportation, treatment, and disposal of hazardous waste, and wherever feasible, reduces

193

Implementing the DC Mode in Cosmological Simulations with Supercomoving Variables  

As emphasized by previous studies, proper treatment of the density fluctuation on the fundamental scale of a cosmological simulation volume - the 'DC mode' - is critical for accurate modeling of spatial correlations on scales ~> 10% of simulation box size. We provide further illustration of the effects of the DC mode on the abundance of halos in small boxes and show that it is straightforward to incorporate this mode in cosmological codes that use the 'supercomoving' variables. The equations governing evolution of dark matter and baryons recast with these variables are particularly simple and include the expansion factor, and hence the effect of the DC mode, explicitly only in the Poisson equation.

Gnedin, Nickolay Y.; Kravtsov, Andrey V.; Rudd, Douglas H.

2011-06-02T23:59:59.000Z

194

Princeton Plasma Physics Lab - General Atomics (GA)  

NLE Websites -- All DOE Office Websites (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
195

DOE - Office of Legacy Management -- National Bureau of Standards - DC 01  

Office of Legacy Management (LM)

Bureau of Standards - DC Bureau of Standards - DC 01 FUSRAP Considered Sites Site: NATIONAL BUREAU OF STANDARDS (DC.01) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Van Ness Street , Washington , D.C. DC.01-1 Evaluation Year: 1987 DC.01-2 DC.01-3 Site Operations: Performed quality analysis lab work for the MED during the 1940s; decontamination efforts were completed in 1952 and the building was demolished in 1976 DC.01-3 Site Disposition: Eliminated - Radiation levels Below criteria DC.01-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Radium DC.01-4 Radiological Survey(s): Yes DC.01-1 Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to NATIONAL BUREAU OF STANDARDS

196

Washington DC Reliability Requirements and the Need to Operate Mirant's  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Washington DC Reliability Requirements and the Need to Operate Washington DC Reliability Requirements and the Need to Operate Mirant's Potomac River Generation Station to Support Local Area Reliability (Oak Ridge National Laboratory 2005) Washington DC Reliability Requirements and the Need to Operate Mirant's Potomac River Generation Station to Support Local Area Reliability (Oak Ridge National Laboratory 2005) Pursuant to Docket No. EO-05-01: Oak Ridge National Laboratory provided an analysis of the Mirant Potomac River Generation Station in 2005 and discussed the reliability requirements of the local area and the potential impacts on reliability of changing operation of the Potomac River Generating Station in this paper. Washington DC Reliability Requirements and the Need to Operate Mirant's Potomac River Generation Station to Support Local Area Reliability.pdf

197

Categorical Exclusion Determinations: Washington, D.C. | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Washington, D.C. Washington, D.C. Categorical Exclusion Determinations: Washington, D.C. Location Categorical Exclusion Determinations issued for actions in Washington, D.C. DOCUMENTS AVAILABLE FOR DOWNLOAD June 11, 2013 CX-010460: Categorical Exclusion Determination Novel Low Cost Environmentally Friendly Synthetic Approaches toward Core-Shell Structured Micro CX(s) Applied: B3.6 Date: 06/11/2013 Location(s): District of Columbia Offices(s): National Energy Technology Laboratory March 28, 2013 CX-010567: Categorical Exclusion Determination Lawrence Berkeley National Laboratory - Rapid Automated Modeling and Simulation of Existing Buildings for Energy Efficiency CX(s) Applied: B3.6 Date: 02/28/2013 Location(s): California, District of Columbia Offices(s): Advanced Research Projects Agency-Energy

198

Electric Compressor With High-Speed Brushless DC Motor  

Science Journals Connector (OSTI)

Moving Magnet Technologies (MMT) from Besançon in France has developed a highly efficient brushless DC motor that is especially suitable for use in ... The following report presents technical details of the electric

Dr.-Ing. Stephan Biwersi; Dipl.-Ing. Stephan Tavernier; M.Sc. Samuel Equoy

2012-12-01T23:59:59.000Z

199

A Multilevel Voltage-Source Inverter with Separate DC Sources  

Office of Scientific and Technical Information (OSTI)

directly to a 13 kV power line. The corresponding parameters have been mentioned in Section IILC. The capacitances for the ten FBI units' dc capacitors are C,, C2, -,...

200

DC Resistivity Survey (Schlumberger Array) At Coso Geothermal Area (1977) |  

Open Energy Info (EERE)

DC Resistivity Survey (Schlumberger Array) At Coso DC Resistivity Survey (Schlumberger Array) At Coso Geothermal Area (1977) Exploration Activity Details Location Coso Geothermal Area Exploration Technique DC Resistivity Survey (Schlumberger Array) Activity Date 1977 Usefulness not indicated DOE-funding Unknown Exploration Basis To investigate electrical properties of rocks associated with thermal phenomena of the Devil's Kitchen-Coso Hot Springs area Notes 18 USGS Schlumberger soundings and 6 Schlumberger soundings by Furgerson (1973) were plotted and automatically processed and interpreted References Jackson, D.B. ODonnell, J.E.; Gregory, D. I. (1 January 1977) Schlumberger soundings, audio-magnetotelluric soundings and telluric mapping in and around the Coso Range, California Retrieved from "http://en.openei.org/w/index.php?title=DC_Resistivity_Survey_(Schlumberger_Array)_At_Coso_Geothermal_Area_(1977)&oldid=591389

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
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201

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

SciTech Connect

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

202

Analysis of a transformer-less, multi-level DC-DC converter for HVDC operation  

SciTech Connect

HVDC systems require DC step up and DC step down units. The traditional approach is the application of twelve-pulse thyristor bridges with transformers. The developments of fast switching IGBT devices permit the development of transformer-less, multi-level converters. A multi-level circuit was suggested by Limpaecher. This paper presents a detailed simulation of the proposed circuit together with the analysis of its performance. The converter consists of a set of capacitors, air core inductors and solid state switches arranged in a ladder network. In the step-up mode, the closing of solid state switches resonantly charges the capacitors in parallel through an air-cored inductor. Then solid state switches resonantly charges the capacitors in parallel through an air-cored inductor. Then solid state switches connect the capacitors in series and discharge them through an air-core inductor to the load. In the step-down mode the capacitors are charged in series and discharged in parallel. The circuit has three modes of operation in each cycle: charge, inversion, and discharge. The circuit operation is analyzed in each mode using SPICE simulations. The selection of the components is discussed and output voltage regulation is analyzed. The results show that the proposed circuit promises significant reduction of losses, because of the zero current switching. The investment cost is reduced because of the elimination of transformers.

Karady, G.G.; Devarajan, S. [Arizona State Univ., Tempe, AZ (United States)

1998-12-31T23:59:59.000Z

203

Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy  

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

204

Modeling and Simulation of Series DC Motors in Electric Car  

Science Journals Connector (OSTI)

Abstract The objective of this paper is assessing use of series DC motor in electric car with its rotation speed controller, and evaluating its performances when different running cases of electric car with different loads. The mathematical equations model of series DC motor and electronic inverter in dynamic state with reference frame d – q were considered. Computer model of these equations was implemented using MATLAB/SIMPOWER facilities obtaining a complete model for motor and controller. Series DC motor is considered and its parameters were used for simulation. The electronic controller operates based on PWM control technique. Simulation of series DC motor performances was conducted within presumptions of changing car load and different resistant torques. Changing loads was realised changing number of passengers when electric car is running on normal streets, when running on streets with slope, when car is accelerate to reach a stead speed and when car is changing speed rigidly and suddenly running on country road having some holes and small slopes. Some conclusions and remarks about performances and behaviour of series DC motor were concluded. The simulated series DC motor was tested and mounted experimentally in a small truck car in Faculty of Mechanical & Electrical Engineering at Damascus University.

Zeina Bitar; Samih Al Jabi; Imad Khamis

2014-01-01T23:59:59.000Z

205

Microsoft Word - figure_99.doc  

Gasoline and Diesel Fuel Update (EIA)

Liquids Production." IN OH TN WV VA KY MD PA NY VT NH MA CT ME RI DE DC NC SC GA FL NJ AL MS LA MO AR TX NM OK CO KS UT AZ WY NE IL IA MN WI ND SD ID MT WA OR NV CA HI AK MI Gulf...

206

Data:Eec988f9-dc0d-45ef-9789-a7781dc1934b | Open Energy Information  

Open Energy Info (EERE)

f9-dc0d-45ef-9789-a7781dc1934b f9-dc0d-45ef-9789-a7781dc1934b No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: El Paso Electric Co (New Mexico) Effective date: 2010/01/01 End date if known: Rate name: LGS (Large General Service Secondary) Sector: Commercial Description: This rate is available to all Customers for lighting,power, and heating service. All service will be taken at one point of delivery designated by the Company and at one of the Company's standard types of service. Service under this rate shall be limited to Customers whose expected monthly demand will exceed 800 kilowatts (kW).

207

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network (OSTI)

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

208

A Low-Cost Soft-Switched DC/DC Converter for Solid-Oxide Fuel Cells  

SciTech Connect

A highly efficient DC to DC converter has been developed for low-voltage high-current solid oxide fuel cells. The newly developed 'V6' converter resembles what has been done in internal combustion engine that split into multiple cylinders to increase the output capacity without having to increase individual cell size and to smooth out the torque with interleaving operation. The development was started with topology overview to ensure that all the DC to DC converter circuits were included in the study. Efficiency models for different circuit topologies were established, and computer simulations were performed to determine the best candidate converter circuit. Through design optimization including topology selection, device selection, magnetic component design, thermal design, and digital controller design, a bench prototype rated 5-kW, with 20 to 50V input and 200/400V output was fabricated and tested. Efficiency goal of 97% was proven achievable through hardware experiment. This DC to DC converter was then modified in the later stage to converter 35 to 63 V input and 13.8 V output for automotive charging applications. The complete prototype was tested at Delphi with their solid oxide fuel cell test stand to verify the performance of the modified DC to DC converter. The output was tested up to 3-kW level, and the efficiency exceeded 97.5%. Multiple-phase interleaving operation design was proved to be reliable and ripple free at the output, which is desirable for the battery charging. Overall this is a very successful collaboration project between the SECA Core Technology Team and Industrial Team.

Jason Lai

2009-03-03T23:59:59.000Z

209

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

210

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

211

Cl{sub 2}-based dry etching of the AlGaInN system in inductively coupled plasmas  

SciTech Connect

Cl{sub 2}-based Inductively Coupled Plasmas with low additional dc self- biases(-100V) produce convenient etch rates(500-1500 A /min) for GaN, AlN, InN, InAlN and InGaN. A systematic study of the effects of additive gas(Ar, N{sub 2}, H{sub 2}), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent Cl{sub 2} in the discharge for all three mixtures, and to have an increase(decrease) in etch rate with source power(pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained.

Cho, Hyun; Vartuli, C.B.; Abernathy, C.R.; Donovan, S.M.; Pearton, S.J. [Florida Univ., Gainesville, FL (United States). Dept. of Materials Science and Engineering; Shul, R.J.; Han, J. [Sandia National Labs., NM (United States)

1997-12-01T23:59:59.000Z

212

Efficient Switches for Solar Power Conversion: Four Quadrant GaN Switch Enabled Three Phase Grid-Tied Microinverters  

SciTech Connect

Solar ADEPT Project: Transphorm is developing power switches for new types of inverters that improve the efficiency and reliability of converting energy from solar panels into useable electricity for the grid. Transistors act as fast switches and control the electrical energy that flows in an electrical circuit. Turning a transistor off opens the circuit and stops the flow of electrical current; turning it on closes the circuit and allows electrical current to flow. In this way a transistor can be used to convert DC from a solar panel into AC for use in a home. Transphorm’s transistors will enable a single semiconductor device to switch electrical currents at high-voltage in both directions—making the inverter more compact and reliable. Transphorm is using Gallium Nitride (GaN) as a semiconductor material in its transistors instead of silicon, which is used in most conventional transistors, because GaN transistors have lower losses at higher voltages and switching frequencies.

None

2012-02-13T23:59:59.000Z

213

40th Joint Propulsion Conference, Fort Lauderdale, FL, July 11-14, 2004 Effect of Segmented Anodes On the Beam Profile of a  

E-Print Network (OSTI)

40th Joint Propulsion Conference, Fort Lauderdale, FL, July 11-14, 2004 Effect of Segmented Anodes was investigated. A BPT-2000 magnetic circuit was retrofitted with a segmented anode with thermal measurement capabilities. Current was shared between shims and main anode by changing the voltage on the shim. A Faraday

King, Lyon B.

214

Zarillo, G. A., and Brehin, F. G. A. 2007. Hydrodynamic and Morphologic Modeling at Sebastian Inlet, FL. Proceedings Coastal Sediments '07 Conference, ASCE Press, Reston,  

E-Print Network (OSTI)

Inlet, FL. Proceedings Coastal Sediments '07 Conference, ASCE Press, Reston, VA, 1297-1310. HYDRODYNAMIC Modeling System (CMS) to investigate the morphological response to time varying forcing, sediment texture evolution of tidal inlet shoals is an important management tool, since they control sediment budgets. Inlet

US Army Corps of Engineers

215

de dimensions diffrentes, l'unit lumineuse n'exigeai t que 3oo fl ergs, et dans l'arc voltaque l'unit de lumire correspond  

E-Print Network (OSTI)

précédente. C. DAGUENET. A. MACFARLANE. 2014 The disruptive discharge of electricity (Décharge disruptive. MACFARLANE and P.-M. PLAYFAIR. 2014 On the disruptive discharge of electricity through liquid dielectriesI38 de dimensions différentes, l'unité lumineuse n'exigeai t que 3oo fl ergs, et dans l'arc

Paris-Sud XI, Université de

216

FY 2013 Small Business Awards Bestowed on 12 Companies at DOE's 2014 Small Business Forum & Expo, Tampa FL, June 12, 2014  

Energy.gov (U.S. Department of Energy (DOE))

The U.S. Department of Energy's (DOE) Office of Small and Disadvantaged Business Utilization presented 12 companies with awards at their annual Small Business Forum & Expo, held this year in Tampa, FL, from June 10-12, 2014. Awards were presented by DOE's Chief of Staff Kevin Knobloch and OSDBU Director John Hale III.

217

Q&A: Kristen Psaki of WeatherizeDC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Q&A: Kristen Psaki of WeatherizeDC Q&A: Kristen Psaki of WeatherizeDC Q&A: Kristen Psaki of WeatherizeDC April 15, 2010 - 3:45pm Addthis Roughly 20 percent of carbon emissions come from inefficient homes. The DC Project says it has found a way to mitigate emissions and create jobs, a winning combination. WeatherizeDC is the non-profit's effort to use a community engagement model to help DC residents find green jobs and live a more energy efficient lifestyle. Energy Empowers recently spoke with DC Project co-founder and creative director Kristen Psaki about WeatherizeDC's approach to climate change. WeatherizeDC is a nonprofit community engagement program. What's the background of it, the story of how and why it was founded? The DC Project was founded over a year ago in January 2009.

218

Q&A: Kristen Psaki of WeatherizeDC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Q&A: Kristen Psaki of WeatherizeDC Q&A: Kristen Psaki of WeatherizeDC Q&A: Kristen Psaki of WeatherizeDC April 15, 2010 - 3:45pm Addthis Roughly 20 percent of carbon emissions come from inefficient homes. The DC Project says it has found a way to mitigate emissions and create jobs, a winning combination. WeatherizeDC is the non-profit's effort to use a community engagement model to help DC residents find green jobs and live a more energy efficient lifestyle. Energy Empowers recently spoke with DC Project co-founder and creative director Kristen Psaki about WeatherizeDC's approach to climate change. WeatherizeDC is a nonprofit community engagement program. What's the background of it, the story of how and why it was founded? The DC Project was founded over a year ago in January 2009.

219

A frequency domain model for 3 kV dc traction dc-side resonance identification  

SciTech Connect

Frequency-dependent effects in railway traction power systems arise from the impedance of substation and locomotive line filters and the traction line. Harmonic noise from traction drives and substations can excite resonances and produce overcurrent or overvoltage conditions at critical points in the network. In this paper, the harmonic feeding impedances of a 3 kV DC traction system seen from the rectifier substation, locomotive drive converter and pantograph terminals are presented. Several substation and locomotive filters are considered with a frequency-dependent traction line. Resonances attributed to the substation filter, locomotive filter and traction line are separate and distinct, the line introducing poles and zeros in the audio frequency (AF) range which vary in frequency and magnitude with locomotive position.

Hill, R.J. [Univ. of Bath (United Kingdom). School of Electronic and Electrical Engineering] [Univ. of Bath (United Kingdom). School of Electronic and Electrical Engineering; Fracchia, M.; Pozzobon, P.; Sciutto, G. [Univ. degli Studi di Genova (Italy). Dipt. di Ingegneria Elettrica] [Univ. degli Studi di Genova (Italy). Dipt. di Ingegneria Elettrica

1995-08-01T23:59:59.000Z

220

Record of Decision for the Orlando Gasification Project, Orlando, Orange County, FL (DOE/EIS-0383)(04/06/07)  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

43 Federal Register 43 Federal Register / Vol. 72, No. 66 / Friday, April 6, 2007 / Notices c. Submission of Paper Applications by Hand Delivery. If you submit your application in paper format by hand delivery, you (or a courier service) must deliver the original and two copies of your application by hand, on or before the application deadline date, to the Department at the following address: U.S. Department of Education, Application Control Center, Attention: (CFDA Number 84.184E), 550 12th Street, SW., Room 7041, Potomac Center Plaza, Washington, DC 20202-4260. The Application Control Center accepts hand deliveries daily between 8 a.m. and 4:30 p.m., Washington, DC time, except Saturdays, Sundays, and Federal holidays. Note for Mail or Hand Delivery of Paper Applications: If you mail or hand deliver

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network (OSTI)

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

222

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

223

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

224

Ohmic contacts to n-GaSb  

E-Print Network (OSTI)

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

225

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

226

Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy  

SciTech Connect

GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-04T23:59:59.000Z

227

Energy Department Completes Cool Roof Installation on DC Headquarters  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Completes Cool Roof Installation on DC Completes Cool Roof Installation on DC Headquarters Building to Save Money by Saving Energy Energy Department Completes Cool Roof Installation on DC Headquarters Building to Save Money by Saving Energy December 14, 2010 - 12:00am Addthis Washington - Secretary Steven Chu today announced the completion of a new cool roof installation on the Department of Energy's Headquarters West Building. There was no incremental cost to adding the cool roof as part of the roof replacement project and it will save taxpayers $2,000 every year in building energy costs. Cool roofs use lighter-colored roofing surfaces or special coatings to reflect more of the sun's heat, helping improve building efficiency, reduce cooling costs and offset carbon emissions. The cool roof and increased insulation at the facility were

228

News From the D.C. Office: Efficient Office Equipment  

NLE Websites -- All DOE Office Websites (Extended Search)

3 Aerial view of Washington D.C. 3 Aerial view of Washington D.C. News From the D.C. Office Efficient Office Equipment: Update and a Look Ahead An extended version of this article is available here. We are now well aware of the large amount of energy consumed by "plug-in loads" such as personal computers (PCs) and other office electronics. Office equipment is often cited as the fastest-growing end-use of electricity in the fastest-growing sector of demand (commercial buildings). According to Dataquest figures, world growth of PCs will average 14 to 15 percent per year through 1999. Only ten years ago, office equipment was not even part of the "map" of non-residential energy end-uses. There were virtually no data on office equipment energy use, nor an awareness of the

229

Argonne TTRDC - TTR Goes to D.C.  

NLE Websites -- All DOE Office Websites (Extended Search)

Argonne's Through-the-Road Hybrid goes to Washington, D.C., Auto Show Argonne's Through-the-Road Hybrid goes to Washington, D.C., Auto Show Argonne's Through the Road Vehicle Argonne's Through-the-Road Hybrid Vehicle Argonne's Through-the-Road hybrid vehicle (TTR) will be on display at the Washington Auto Show at Walter E. Washington Convention Center, February 4-8, 2009, in Washington, D.C. The TTR will be in the combined U.S. Department of Energy, Environmental Protection Agency, and Department of Transportation exhibit booth that features advanced vehicle technologies that are safe, clean, and efficient. Due to power-split limitations, no plug-in hybrid electric vehicle (PHEV) exists that can complete an Urban Dynamometer Driving Schedule (UDDS) cycle without starting the engine. Argonne created the TTR, an in-house PHEV development platform with an open

230

DOE Solar Decathlon: News Blog » Team Capitol DC  

NLE Websites -- All DOE Office Websites (Extended Search)

Capitol DC Capitol DC Below you will find Solar Decathlon news from the Team Capitol DC archive, sorted by date. Hangout With Solar Decathlon 2013 Teams on Sept. 18! Wednesday, September 11, 2013 By Rebecca Matulka Editor's Note: This entry has been cross-posted from DOE's Energy Blog. Photo of a Solar Decathlon house at night. Superimposed is the following text: "Solar Decathlon 2013: The Path to a Brighter Future. Energy.gov/live. Wednesday, Sept. 18, at p.m. ET. #askSD." Mark your calendars for a Google+ Hangout on Solar Decathlon 2013: The Path to a Brighter Future on Wednesday, Sept. 18, at 2 p.m. ET. For more than 10 years, the U.S. Department of Energy Solar Decathlon has been preparing the next wave of energy leaders-providing hands-on experience in designing and building energy-efficient, solar-powered

231

2012 Race to DC | ENERGY STAR Buildings & Plants  

NLE Websites -- All DOE Office Websites (Extended Search)

12 Race to DC 12 Race to DC Secondary menu About us Press room Contact Us Portfolio Manager Login Facility owners and managers Existing buildings Commercial new construction Industrial energy management Small business Service providers Service and product providers Verify applications for ENERGY STAR certification Design commercial buildings Energy efficiency program administrators Commercial and industrial program sponsors Associations State and local governments Federal agencies Tools and resources Training In this section Why you should design to earn the ENERGY STAR Follow EPA's step-by-step process ENERGY STAR Challenge for Architects 2013 Race to Denver 2012 Race to DC 2011 Race to New Orleans 2010 Race to Miami 2009 Race to San Francisco 2008 Race to Boston 2007 Race to San Antonio

232

SAIL Venture Partners (Washington DC) | Open Energy Information  

Open Energy Info (EERE)

DC) DC) Name SAIL Venture Partners (Washington DC) Address 2900 S. Quincy St, Suite 375 Place Arlington, Virginia Zip 22206 Product Venture capital fund focusing on clean energy Year founded 2002 Phone number (703) 379-2713 Website http://www.sailvc.com/ Coordinates 38.839975°, -77.087781° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":38.839975,"lon":-77.087781,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

233

NREL: Energy Analysis - Washington D.C. Office Staff  

NLE Websites -- All DOE Office Websites (Extended Search)

Washington D.C. Office Washington D.C. Office The following SEAC staff are based in our Washington D.C. Office. They support a variety of programs and activities, and often are the liaison between the U.S. Department of Energy and staff based in Golden, Colorado. Team Lead: Margaret Mann (Golden) Administrative Support: JoAnn Weaver (Golden) Thomas Jenkin Austin Brown David J. Feldman Tom Schneider Robert Margolis Kathleen Nawaz Monisha Shah Photo of Austin Brown. Austin Brown Senior Analyst (Strategic Planning) Areas of expertise Crosscutting low-carbon strategies Clean transportation technologies and policies Primary research interests Clean energy research portfolio planning Energy and society Sustainable transportation systems More information on Austin Brown Photo of David J. Feldman

234

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

235

Nuclear magnetic resonance experiments with dc SQUID amplifiers  

SciTech Connect

The development and fabrication of dc SQUIDs (Superconducting QUantum Interference Devices) with Nb/Al{sub 2}O{sub 3}/Nb Josephson junctions is described. A theory of the dc SQUID as a radio-frequency amplifier is presented, with an optimization strategy that accounts for the loading and noise contributions of the postamplifier and maximizes the signal-to-noise ratio of the total system. The high sensitivity of the dc SQUID is extended to high field NMR. A dc SQUID is used as a tuned radio-frequency amplifier to detect pulsed nuclear magnetic resonance at 32 MHz from a metal film in a 3.5 Tesla static field. A total system noise temperature of 11 K has been achieved, at a bath temperature of 4.2 K. The minimum number of nuclear Bohr magnetons observable from a free precession signal after a single pulse is about 2 {times} 10{sup 17} in a bandwidth of 25 kHz. In a separate experiment, a dc SQUID is used as a rf amplifier in a NQR experiment to observe a new resonance response mechanism. The net electric polarization of a NaClO{sub 3} crystal due to the precessing electric quadrupole moments of the Cl nuclei is detected at 30 MHz. The sensitivity of NMR and NQR spectrometers using dc SQUID amplifiers is compared to the sensitivity of spectrometers using conventional rf amplifiers. A SQUID-based spectrometer has a voltage sensitivity which is comparable to the best achieved by a FET-based spectrometer, at these temperatures and operating frequencies.

Heaney, M.B. (California Univ., Berkeley, CA (USA). Dept. of Physics Lawrence Berkeley Lab., CA (USA))

1990-11-01T23:59:59.000Z

236

Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction  

Science Journals Connector (OSTI)

We report a nondestructive large-area method to characterize dislocation formation at a highly lattice-mismatched interface. The analysis is based on x-ray diffraction and reciprocal space mapping using a standard lab-based diffractometer. We use this technique to identify and analyze a two-dimensional array of 90° misfit dislocations at a GaSb/GaAs interface. The full width at half maximum of the GaSb 004 reciprocal lattice point is shown to decrease with increasing GaSb epilayer thickness as expected from theoretical models. Based on these measurements the variation in the spatial dislocation frequency is calculated to be 1%.

Charles J. Reyner; Jin Wang; Kalyan Nunna; Andrew Lin; Baolai Liang; Mark S. Goorsky; D. L. Huffaker

2011-01-01T23:59:59.000Z

237

DETEW!INATION OF THE NEUTRON MAGNETIC FlONENT G.L. Greene and N.F. Ramsey  

NLE Websites -- All DOE Office Websites (Extended Search)

DETEW!INATION OF THE NEUTRON MAGNETIC FlONENT DETEW!INATION OF THE NEUTRON MAGNETIC FlONENT * G.L. Greene and N.F. Ramsey Harvard U n i v e r s i t y , Cambridge, N a s s a c h u s e t t s 02138 h W. Plampe i - I n s t i t u t Laue-Langevin, 38042 Grenoble, France' 9/ \ P J . M . P e n d l e b u r y and K. Smith " ' , \30ddb * A , 4 U n i v e r s i t y o f S u s s e x , Falmer, B r i g h t o n , B N I 9 Q H , U n i t e d Kingdom W . B . Dress and P.D. Miller -3 Oak Ridge N a t i o n a l L a b o r a t o r y , Oak Ridge, Tennessee 37838 P a u l P e r r i n C e n t r e d ' E t u d e s N u c l e a i r e s , 38042 C r e n o b l e , F r a n c e The n e u t r o n m a g n e t i c moment h a s been measured w i t h an improvement of a f a c t o r of 100 o v e r t h e p r e v i o u s b e s t measurement. s p e c t r o m e t e r o f t h e s e p a r a t e d o s c i l l a t o r y f i e l d t y p e c a p a b l e o f d e t e r m i n i n g a r e s o n a n c e s i g n a l f o r b o t h n e u t r o n s and p r o t o n s ( i n f l o w i n g H20), we f i n d u n / p p = 0.68497935(17)

238

Quantum efficiency temporal response and lifetime of a GaAs cathode in SRF electron gun  

SciTech Connect

RF electron guns with a strained super lattice GaAs cathode can generate polarized electron beam of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface. In a normal conducting RF gun, the extremely high vaccum required by these cathodes can not be met. We report on an experiment with a superconducting SRF gun, which can maintain a vacuum of nearly 10-12 torr because of cryo-pumping at the temperature of 4.2K. With conventional activation, we obtained a QE of 3% at 532 nm, with lifetime of nearly 3 days in the preparation chamber. We plan to use this cathode in a 1.3 GHz 1/2 cell SRF gun to study its performance. In addition, we studied the multipacting at the location of cathode. A new model based on the Forkker-Planck equation which can estimate the bunch length of the electron beam is discussed in this paper. Future particle accelerators such as eRHIC and ILC require high brightness, high current polarized electrons Recently, using a superlattice crystal, the maximum polarization of 95% was reached. Activation with Cs,O lowers the electron affinity and makes it energetically possible for all the electrons excited in to the conduction band and reach the surface to escape into the vacuum. Presently the polarized electron sources are based on DC gun, such as that at the CEBAF at Jlab. In these devices, the life time of the cathode is extended due to the reduced back bombardment in their UHV conditions. However, the low accelerating gradient of the DC guns lead to poor longitudinal emittance. The higher accelerating gradient of the RF gun generates low emittance beams. Superconducting RF guns combine the excellent vacuum conditions of the DC guns with the higher accelerating gradients of the RF guns and provide potentially a long lived cathode with very low transverse and longitudinal emittance. In our work at BNL, we successfully activated the GaAs. The quantum efficient is 3% at 532 nm and is expected to improve further. In addition, we studied the multipacting at the location of cathode. A new model based on the Forkker-Planck equation which can estimate the bunch length of the electron beam is discussed in this paper.

Wang, E.; Ben-Zvi, I.; Kewisch, J.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

2010-05-23T23:59:59.000Z

239

GaN–InGaN LED efficiency reduction from parasitic electron currents in p-GaN  

Science Journals Connector (OSTI)

Abstract This paper presents observations of a previously unidentified source of performance limitation for GaN–InGaN LED devices. While most studies focus on output saturation known as ‘current droop’ from InGaN layer effects, we show an alike influence from p-type GaN’s inherent background electron concentration. p-GaN material was investigated to confirm that, even though the material had an excess of holes, the background electrons were indeed present and were influencing the charge flow across device electrodes. This current does not cross LED heterojunctions but rather drifts toward its proximal device electrode, causing a source of heating while providing no carriers for light emitting recombination. The effects of this current were explored in an LED configuration, whose output showed weak efficiency at very low biases in addition to that from current droop. While the shortcoming under small currents has previously been attributed to electron tunneling across the junction, we propose that the background electrons inside p-GaN could be another explanation.

G. Togtema; V. Georgiev; D. Georgieva; R. Gergova; K.S.A. Butcher; D. Alexandrov

2015-01-01T23:59:59.000Z

240

Graphite electrode DC arc furnace. Innovative technology summary report  

SciTech Connect

The Graphite Electrode DC Arc Furnace (DC Arc) is a high-temperature thermal process, which has been adapted from a commercial technology, for the treatment of mixed waste. A DC Arc Furnace heats waste to a temperature such that the waste is converted into a molten form that cools into a stable glassy and/or crystalline waste form. Hazardous organics are destroyed through combustion or pyrolysis during the process and the majority of the hazardous metals and radioactive components are incorporated in the molten phase. The DC Arc Furnace chamber temperature is approximately 593--704 C and melt temperatures are as high as 1,500 C. The DC Arc system has an air pollution control system (APCS) to remove particulate and volatiles from the offgas. The advantage of the DC Arc is that it is a single, high-temperature thermal process that minimizes the need for multiple treatment systems and for extensive sorting/segregating of large volumes of waste. The DC Arc has the potential to treat a wide range of wastes, minimize the need for sorting, reduce the final waste volumes, produce a leach resistant waste form, and destroy organic contaminants. Although the DC arc plasma furnace exhibits great promise for treating the types of mixed waste that are commonly present at many DOE sites, several data and technology deficiencies were identified by the Mixed Waste Focus Area (MWFA) regarding this thermal waste processing technique. The technology deficiencies that have been addressed by the current studies include: establishing the partitioning behavior of radionuclides, surrogates, and hazardous metals among the product streams (metal, slag, and offgas) as a function of operating parameters, including melt temperature, plenum atmosphere, organic loading, chloride concentration, and particle size; demonstrating the efficacy of waste product removal systems for slag and metal phases; determining component durability through test runs of extended duration, evaluating the effect of feed composition variations on process operating conditions and slag product performance; and collecting mass balance and operating data to support equipment and instrument design.

NONE

1999-05-01T23:59:59.000Z

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241

High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs  

DOE Patents (OSTI)

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

Shimer, D.W.; Lange, A.C.

1995-05-23T23:59:59.000Z

242

High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs  

DOE Patents (OSTI)

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

Shimer, Daniel W. (Danville, CA); Lange, Arnold C. (Livermore, CA)

1995-01-01T23:59:59.000Z

243

Active dc filter for HVDC system--A test installation in the Konti-Skan DC link at Lindome converter station  

SciTech Connect

The purpose of introducing active dc filters is to meet the more and more stringent requirement from power utilities on limiting telephone interference caused by harmonic currents from HVdc transmission lines, without unnecessarily increasing the cost of HVdc stations. An active dc filter installed in the Konti-Skan HVdc link is described. The active dc filter is connected at the bottom of an existing passive dc filter at the Lindome station. The active dc filter includes optic harmonic current measuring unit, control system, protection and supervision system, PWM power amplifier, high-frequency transformer, surge arrester, and coupling apparatuses. The active dc filter has small physical size and occupies small ground area. The performance of the active dc filter for eliminating the disturbing harmonics is excellent. To achieve comparable results by passive filters would require something like ten times more high voltage equipment.

Zhang, Wenyan; Asplund, G. (ABB Power Systems, Ludvika (Sweden). HVDC Division); Aberg, A. (ABB Corporate Research, Lund (Sweden). Dept. of Man-Machine Communication); Jonsson, U. (Svenska Kraftnaet, Vaellingby (Sweden)); Loeoef, O. (Vattenfall AB, Trollhaettan (Sweden). Region Vaestsverige)

1993-07-01T23:59:59.000Z

244

GaTe semiconductor for radiation detection  

DOE Patents (OSTI)

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

245

Monolithically Peltier-cooled vertical-cavity surface-emitting lasers Paul FL Berger, Niloy K. Dutta, Kent D. Choquette, Ghulam Hasnain, and Naresh Chand  

E-Print Network (OSTI)

GaAs laser. Also, in a monolithically integrated thermo- electric cooled InGaAsP/InP laser diode, Dutta et ~1 temperature of f 7.5 "C has been achieved using f 100 mA of thermoelectric cooler current. The observed" thermoelectric cooler, or a mono- lithically integrated thermoelectric cooler. Hava et ~1.~ ob- served a 2 "C

246

Design and analysis of a zero-voltage switching scheme for a dc- to-dc converter  

E-Print Network (OSTI)

. Singh (Member) (Memberl E. G. guak (Member) A. 3. Pat, ton Head of Department) December 199'2 ABSTRA('T Design and Analysis of a Zero-4'oltage Switching Si. heme for a. Dc-to-Dc Converter. (December Iq'3'd) G. Arun, H. S. , College Of Engg...&rt~RV, Page 40 Voltage across inain switch in a clc cliopper clrive with zeio-voltage s w 1 't C 1 1 i l1 g , &g CHAPTER I INTRODUCTION A. Introduction In general terms, power electronics is concerned wit, h the conversion and control of electrical...

Arun, G.

2012-06-07T23:59:59.000Z

247

Electromagnetic Coupling in a dc Motor and Tachometer Assembly  

E-Print Network (OSTI)

-pole permanent magnet stator devices. A shaft of finite stiffness connects the tachometer and motor armatures machines. The experimental test setup consists of an integrated permanent magnet dc motor-tachometer unit-tachometer shaft or a flexible mechanical coupling, this exercise in servo-control design becomes quite challenging

Awtar, Shorya

248

Natural Gas Pipeline Leaks Across Washington, DC Robert B. Jackson,,,  

E-Print Network (OSTI)

Natural Gas Pipeline Leaks Across Washington, DC Robert B. Jackson,,, * Adrian Down, Nathan G increased in recent decades, but incidents involving natural gas pipelines still cause an average of 17 fatalities and $133 M in property damage annually. Natural gas leaks are also the largest anthropogenic

Jackson, Robert B.

249

Hybrid Multilevel Inverter with Single DC Haiwen Liu1  

E-Print Network (OSTI)

Hybrid Multilevel Inverter with Single DC Source Haiwen Liu1 , Leon M. Tolbert1, 2 , Burak Ozpineci Knoxville, TN 37932 3. Parker-Hannifin Corp. Olive Branch, MI 38654 Abstract- A hybrid multilevel inverter inverter (one leg for each phase) and H-bridge in series with each inverter leg. The inverter can be used

Tolbert, Leon M.

250

Decomposition of Naphthalene by dc Gliding Arc Gas Discharge  

Science Journals Connector (OSTI)

Decomposition of Naphthalene by dc Gliding Arc Gas Discharge ... In the air and oxygen gliding arc discharges, the naphthalene degradation is mainly governed by reactions with oxygen-derived radicals. ... Therefore, the local electric field strength is relatively low in argon gliding arc plasma. ...

Liang Yu; Xiaodong Li; Xin Tu; Yu Wang; Shengyong Lu; Jianhua Yan

2009-12-11T23:59:59.000Z

251

Fuzzy Estimation of DC Motor Winding Currents Innovatia Software  

E-Print Network (OSTI)

stator windings. an attractive alternative to current estimation using In order to implement an eFuzzy Estimation of DC Motor Winding Currents Dan Simon Innovatia Software 775 Rothrock Circle °ux is rotated in the desired direction of ofuzzy ¯ltering to motor winding current estimation

Simon, Dan

252

Electrostatic coalescence system with independent AC and DC hydrophilic electrodes  

DOE Patents (OSTI)

An improved electrostatic coalescence system is provided in which independent AC and DC hydrophilic electrodes are employed to provide more complete dehydration of an oil emulsion. The AC field is produced between an AC electrode array and the water-oil interface wherein the AC electrode array is positioned parallel to the interface which acts as a grounded electrode. The emulsion is introduced into the AC field in an evenly distributed manner at the interface. The AC field promotes drop-drop and drop-interface coalescence of the water phase in the entering emulsion. The continuous oil phase passes upward through the perforated AC electrode array and enters a strong DC field produced between closely spaced DC electrodes in which small dispersed droplets of water entrained in the continuous phase are removed primarily by collection at hydrophilic DC electrodes. Large droplets of water collected by the electrodes migrate downward through the AC electrode array to the interface. All phase separation mechanisms are utilized to accomplish more complete phase separation.

Hovarongkura, A. David (Arlington, VA); Henry, Jr., Joseph D. (Morgantown, WV)

1981-01-01T23:59:59.000Z

253

Hydrogen Storage Systems Analysis Working Group Meeting Argonne DC Offices  

E-Print Network (OSTI)

Hydrogen Storage Systems Analysis Working Group Meeting Argonne DC Offices L'Enfant Plaza and Kristin Deason Sentech, Inc. January 16, 2008 #12;SUMMARY REPORT Hydrogen Storage Systems Analysis Objectives This meeting was one of a continuing series of biannual meetings of the Hydrogen Storage Systems

254

EE443L Lab 2: Modeling a DC Motor Introduction  

E-Print Network (OSTI)

and add conversion factors. Copy the LabVIEW VI lab2.vi and its associated subVI Altera the four conversion factors. Motor voltage is measured with a voltage divider to ensure DAQ card analog: The DC motor is a common actuator in control systems that converts electrical energy into rotational

Wedeward, Kevin

255

National Energy Education Summit to Electrify D.C.  

Office of Energy Efficiency and Renewable Energy (EERE)

On January 26, energy educators from across the country will convene in Washington, D.C., to address the need for nationwide energy literacy. Join us for the National Energy Education Summit, hosted by the Council of Energy Research and Education Leaders.

256

High Voltage DC Transmission 2 1.0 Introduction  

E-Print Network (OSTI)

1 High Voltage DC Transmission 2 1.0 Introduction Interconnecting HVDC within an AC system requires on use of switching devices collectively referred to in the HVDC community as valves. Valves may be non. Fig. 1 There have been three types of devices for implementing HVDC converter circuits: mercury

McCalley, James D.

257

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a  

E-Print Network (OSTI)

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a Anna Fontcuberta i Morral,b and Harry, Pasadena, California 91125 Daniel J. Aiken Emcore Photovoltaics, Albuquerque, New Mexico 87123 Mark W. Wanlass National Renewable Energy Laboratory, Golden, Colorado 80401 Received 19 March 2006; accepted 26

Atwater, Harry

258

Recovery Act: Integrated DC-DC Conversion for Energy-Efficient Multicore Processors  

SciTech Connect

In this project, we have developed the use of thin-film magnetic materials to improve in energy efficiency of digital computing applications by enabling integrated dc-dc power conversion and management with on-chip power inductors. Integrated voltage regulators also enables fine-grained power management, by providing dynamic scaling of the supply voltage in concert with the clock frequency of synchronous logic to throttle power consumption at periods of low computational demand. The voltage converter generates lower output voltages during periods of low computational performance requirements and higher output voltages during periods of high computational performance requirements. Implementation of integrated power conversion requires high-capacity energy storage devices, which are generally not available in traditional semiconductor processes. We achieve this with integration of thin-film magnetic materials into a conventional complementary metal-oxide-semiconductor (CMOS) process for high-quality on-chip power inductors. This project includes a body of work conducted to develop integrated switch-mode voltage regulators with thin-film magnetic power inductors. Soft-magnetic materials and inductor topologies are selected and optimized, with intent to maximize efficiency and current density of the integrated regulators. A custom integrated circuit (IC) is designed and fabricated in 45-nm CMOS silicon-on-insulator (SOI) to provide the control system and power-train necessary to drive the power inductors, in addition to providing a digital load for the converter. A silicon interposer is designed and fabricated in collaboration with IBM Research to integrate custom power inductors by chip stacking with the 45-nm CMOS integrated circuit, enabling power conversion with current density greater than 10A/mm2. The concepts and designs developed from this work enable significant improvements in performance-per-watt of future microprocessors in servers, desktops, and mobile devices. These new approaches to scaled voltage regulation for computing devices also promise significant impact on electricity consumption in the United States and abroad by improving the efficiency of all computational platforms. In 2006, servers and datacenters in the United States consumed an estimated 61 billion kWh or about 1.5% of the nation's total energy consumption. Federal Government servers and data centers alone accounted for about 10 billion kWh, for a total annual energy cost of about $450 million. Based upon market growth and efficiency trends, estimates place current server and datacenter power consumption at nearly 85 billion kWh in the US and at almost 280 billion kWh worldwide. Similar estimates place national desktop, mobile and portable computing at 80 billion kWh combined. While national electricity utilization for computation amounts to only 4% of current usage, it is growing at a rate of about 10% a year with volume servers representing one of the largest growth segments due to the increasing utilization of cloud-based services. The percentage of power that is consumed by the processor in a server varies but can be as much as 30% of the total power utilization, with an additional 50% associated with heat removal. The approaches considered here should allow energy efficiency gains as high as 30% in processors for all computing platforms, from high-end servers to smart phones, resulting in a direct annual energy savings of almost 15 billion kWh nationally, and 50 billion kWh globally. The work developed here is being commercialized by the start-up venture, Ferric Semiconductor, which has already secured two Phase I SBIR grants to bring these technologies to the marketplace.

Shepard, Kenneth L

2013-03-31T23:59:59.000Z

259

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

260

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Dynamic Resistance of YBCO-Coated Conductors in Applied AC Fields with DC Transport Currents and DC Background Fields  

SciTech Connect

In order to predict heat loads in future saturable core fault-current-limiting devices due to ac fringing fields, dynamic resistance in YBCO-coated conductors was measured at 77 K in peak ac fields up to 25 mT at 60 Hz and in dc fields up to 1 T. With the sample orientation set such that the conductor face was either parallel or perpendicular to the ac and dc applied fields, the dynamic resistance was measured at different fractions of the critical current to determine the relationship between the dc transport current and the applied fields. With respect to field orientation, the dynamic resistance for ac fields that were perpendicular to the conductor face was significantly higher than when the ac fields were parallel to the conductor face. It was also observed that the dynamic resistance: (1) increased with increasing fraction of the dc transport current to the critical current, (2) was proportional to the inverse of the critical current, and (3) demonstrated a linear dependence with the applied ac field once a threshold field was exceeded. This functional behavior was consistent with a critical state model for the dynamic resistance, but discrepancies in absolute value of the dynamic resistance suggested that further theoretical development is needed.

Duckworth, Robert C [ORNL] [ORNL; Zhang, Yifei [ORNL] [ORNL; Ha, Tam T [ORNL] [ORNL; Gouge, Michael J [ORNL] [ORNL

2011-01-01T23:59:59.000Z

262

Train the Teacher - Energy Workshops for DC-area Elementary School...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Train the Teacher - Energy Workshops for DC-area Elementary School Teachers Train the Teacher - Energy Workshops for DC-area Elementary School Teachers May 2, 2014 1:00PM to 4:15PM...

263

Policy Flash 2013-76 Term Assignments of Contractors to the DC...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

6 Term Assignments of Contractors to the DC Area Policy Flash 2013-76 Term Assignments of Contractors to the DC Area Questions concerning this policy flash should be directed to A...

264

A Segmented Drive System with a Small DC Bus Capacitor | Department...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

-- Washington D.C. apep08su.pdf More Documents & Publications A Segmented Drive Inverter Topology with a Small DC Bus Capacitor A Segmented Drive Inverter Topology with a...

265

D.C. Middle and High School Students Get a Chance to Experience...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

D.C. Middle and High School Students Get a Chance to Experience the Regional Science Bowl Competition Setting D.C. Middle and High School Students Get a Chance to Experience the...

266

Energy Secretary Moniz's Remarks at CSIS in Washington D.C. on...  

Office of Environmental Management (EM)

Energy Secretary Moniz's Remarks at CSIS in Washington D.C. on Energy Security 40 Years after the Embargo - As Delivered Energy Secretary Moniz's Remarks at CSIS in Washington D.C....

267

DC powerline communication system using a transmission line transformer for high degree of freedom applications  

E-Print Network (OSTI)

A new type of powerline communication is developed to reduce cable requirements for robotic, electromechanical, and vehicular systems. A DC power bus line connecting a DC power supply to motor drives and sensor units is ...

Wade, Eric R. (Eric Randolph), 1978-

2004-01-01T23:59:59.000Z

268

Defect studies in low-temperature-grown GaAs  

SciTech Connect

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

269

Defect studies in low-temperature-grown GaAs  

SciTech Connect

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

270

Interviews in Washington, DC for Albert Einstein Fellowship Semi-Finalists  

Energy.gov (U.S. Department of Energy (DOE))

Selected semi-finalists in the Albert Einstein Distinguished Educator Fellowship are invited to DC for interviews.

271

Proceedings of the National Hydrogen Energy Roadmap Workshop: Washington, DC; April 2-3, 2002  

Energy.gov (U.S. Department of Energy (DOE))

Summary of the Proceedings of the National Hydrogen Energy Roadmap Workshop held April 2-3, 2002 in Washington, DC.

272

Secretary Moniz's Remarks at the Powering Africa Summit in Washington, D.C.-- As Delivered  

Energy.gov (U.S. Department of Energy (DOE))

Secretary Moniz's remarks, as delivered, at the Power Africa Summit in Washington, D.C. on January 29, 2015.

273

A Decentralized Protection Scheme for Converters Utilizing a DC-link Inductor  

E-Print Network (OSTI)

- as in HVDC transmission for example - as well as in DC-links for high-power current source inverters

Lipo, Thomas

274

211 Westcott Building, 222 S. Copeland Avenue, P.O. Box 3061480, Tallahassee, FL 32306-1480 Telephone 850.644.6876, Fax 850.644.3375 http://fda.fsu.edu  

E-Print Network (OSTI)

211 Westcott Building, 222 S. Copeland Avenue, P.O. Box 3061480, Tallahassee, FL 32306 in the Office of the Vice President for Faculty Development and Advancement in Westcott 115 by Monday, October 7

Sura, Philip

275

408 Westcott Building, Florida State University, P.O. Box 3061410, Tallahassee, FL 32306-1410 Telephone 850.644.3501 Fax 850.644.2969 www.gradschool.fsu.edu  

E-Print Network (OSTI)

408 Westcott Building, Florida State University, P.O. Box 3061410, Tallahassee, FL 32306 Westcott. Student deadline to departments is February 1, 2011. Folders for all nominees are due

Bowers, Philip L.

276

Speed control of DC motor based on neural net and fuzzy logic  

Science Journals Connector (OSTI)

This paper presented the speed control of DC motor based on neural net and fuzzy logic. To bypass the difficulties caused by system constraints and modelling uncertainties of the speed control of DC motor a neural network approach for on-line speed control ... Keywords: DC motor, fuzzy logic, neural network, speed control

Zahra Moravej

2005-09-01T23:59:59.000Z

277

BEAM DYNAMICS SIMULATIONS FOR A DC GUN BASED INJECTOR F.Zhou 1,2,  

E-Print Network (OSTI)

BEAM DYNAMICS SIMULATIONS FOR A DC GUN BASED INJECTOR FOR PERL* F.Zhou 1,2, , I.Ben-Zvi2 , X for this machine are being extensively investigated at BNL. One of the possible options is photocathode DC gun. The schematic layout of a PERL DC gun based injector and its preliminary beam dynamics are presented

Brookhaven National Laboratory

278

November 2002 15th TOFE, Washington, D.C. 1 Thermal Behavior and Operating  

E-Print Network (OSTI)

November 2002 15th TOFE, Washington, D.C. 1 Thermal Behavior and Operating Requirements of IFE Washington, D.C. November 2002 #12;November 2002 15th TOFE, Washington, D.C. 2 Abstract During injection the thermal behavior of the target under such conditions and explores possible ways of extending the target

Raffray, A. René

279

Control of a Fuel-Cell Powered DC Electric Vehicle Motor  

E-Print Network (OSTI)

Control of a Fuel-Cell Powered DC Electric Vehicle Motor Federico Zenith Sigurd Skogestad of a Fuel-Cell Powered DC Electric Vehicle Motor #12;3 Currently Available Models and Control Strategies Skogestad, Control of a Fuel-Cell Powered DC Electric Vehicle Motor #12;3 Currently Available Models

Skogestad, Sigurd

280

Towards Building an Optimal Demand Response Framework for DC Distribution Networks  

E-Print Network (OSTI)

Towards Building an Optimal Demand Response Framework for DC Distribution Networks Hamed Mohsenian, an optimization-based foundation is proposed for demand response in DC distribution networks in presence to assess the performance and to gain insights into the proposed demand-response paradigm. Keywords: DC

Mohsenian-Rad, Hamed

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

DSP IMPLEMENTATION OF DC VOLTAGE REGULATION USING ADAPTIVE CONTROL FOR 200 KW 62000 RPM  

E-Print Network (OSTI)

to control the DC voltage for 200 kW induction generator rated at a speed of 62000 RPM under different load to regulate the DC voltage for high speed induction generators rated from 5 kW to 200 kW. ii #12DSP IMPLEMENTATION OF DC VOLTAGE REGULATION USING ADAPTIVE CONTROL FOR 200 KW 62000 RPM INDUCTION

Wu, Thomas

282

On the optimization of a dc arcjet diamond chemical vapor deposition reactor  

E-Print Network (OSTI)

On the optimization of a dc arcjet diamond chemical vapor deposition reactor S. W. Reevea) and W. A precursor in our dc arcjet reactor.1 Based on conclusions drawn from that work, an optimization strategy diamond film growth in a dc arcjet chemical vapor deposition reactor has been developed. Introducing

Dandy, David

283

A direct AC-to-DC converter topology with high-frequency isolation  

E-Print Network (OSTI)

-to-ac converter eliminating the acto-dc rectification stage, power factor correction boost stage, and dc-dc converter stage present in the conventional system. The output of the high-frequency isolation transformer is rectified and processed via a filtering stage...

Sulistyono, Widodo

2012-06-07T23:59:59.000Z

284

Data:B5ebf44c-eb8c-42d6-9fb5-703a79d2e3dc | Open Energy Information  

Open Energy Info (EERE)

ebf44c-eb8c-42d6-9fb5-703a79d2e3dc ebf44c-eb8c-42d6-9fb5-703a79d2e3dc No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Cobb Electric Membership Corp Effective date: 2006/01/01 End date if known: Rate name: Outdoor Lighting Overhead Service MH 400 W FL Pole Contribution Not Paid Sector: Lighting Description: Pole Contributions Wood 30' $246.00 Wood 35' $297.00 Wood 40' $382.00 Wood 45' $424.00 Source or reference: https://www.cobbemc.com/~/media/Files/CEMC/PDFs/2012%20PDF/233%20Lighting%20Rates%202012.pdf Source Parent: Comments Applicability Demand (kW) Minimum (kW): Maximum (kW): History (months):

285

Energy absorption in Ni-Mn-Ga/ polymer composites  

E-Print Network (OSTI)

In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

Feuchtwanger, Jorge

2006-01-01T23:59:59.000Z

286

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

287

DC Resistivity Survey (Schlumberger Array) At Raft River Geothermal Area  

Open Energy Info (EERE)

Area Area (1974-1975) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: DC Resistivity Survey (Schlumberger Array) At Raft River Geothermal Area (1974-1975) Exploration Activity Details Location Raft River Geothermal Area Exploration Technique DC Resistivity Survey (Schlumberger Array) Activity Date 1974 - 1975 Usefulness not indicated DOE-funding Unknown Exploration Basis Hydrogeologic study of the area Notes In 1975, the U.S. Geological Survey made 70 Schlumberger resistivity soundings in the Upper Raft River Valley and in parts of the Raft River Valley. These soundings complement the 79 soundings made previously in the Raft River Valley and bring the total number of soundings to 149. This work was done as part of a hydrogeologic study of the area. The location,

288

GA-AL-SC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

289

Low Efficiency Droop Green Nano-Pyramid {10 -11} InGaN/GaN Multiple Quantum Well LED  

Science Journals Connector (OSTI)

We report a low efficiency droop 520 nm green nano-pyramid InGaN/GaN multiple quantum well (MQW) LED. MQWs were grown on the semipolar {10 1} nano-pyramid facets. The device physics...

Cheng, Yuh-Jen; Chang, Shih-Pang; Lin, Da-Wei; Kuo, Hao-chung; Xiong, Kang-lin

290

InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting  

Science Journals Connector (OSTI)

Hydrogen generation through water splitting by n-InGaN working electrodes with bias generated from GaAs solar cell was studied. Instead of using an external bias provided by power...

Liu, Shu-Yen; Sheu, J K; Lin, Yu-Chuan; Chen, Yu-Tong; Tu, S J; Lee, M L; Lai, W C

2013-01-01T23:59:59.000Z

291

Reaktive Molekularstrahlepitaxie und Charakterisierung von GaN/(Al,Ga)N-Heterostrukturen auf SiC(0001).  

E-Print Network (OSTI)

??Thema dieser Arbeit ist die Synthese von hexagonalen GaN/(Al,Ga)N-Heterostrukturen mittels reaktiver Molekularstrahlepitaxie (MBE) auf SiC(0001)-Substraten. Der Einfluß der Wachstumsbedingungen auf die strukturellen, morphologischen, optischen und… (more)

Thamm, Andreas

2001-01-01T23:59:59.000Z

292

Disc rotors with permanent magnets for brushless dc motor  

SciTech Connect

This patent describes a brushless dc permanent magnet motor for driving an autonomous underwater vehicle. It comprises first and second substantially flat, generally cylindrical stators disposed in side by side relation; a first substantially flat, generally cylindrical rotor; a first shaft connected to the first rotor and a second, concentric shaft connected to the second rotor; and means for providing rotation of the first and second shafts in opposite directions.

Hawsey, R.A.; Bailery, J.M.

1992-05-26T23:59:59.000Z

293

Synthesis of silicon nanotubes by DC arc plasma method  

SciTech Connect

Plasma synthesis is a novel technique of synthesis of nanomaterials as they provide high rate of production and promote metastable reactions. Very thin walled silicon nanotubes were synthesized in a DC direct arc thermal plasma reactor. The effect of parameters of synthesis i.e. arc current and presence of hydrogen on the morphology of Si nanoparticles is reported. Silicon nanotubes were characterized by Transmission Electron Microscopy (TEM), Local Energy Dispersive X-ray analysis (EDAX), and Scanning Tunneling Microscopy (STM).

Tank, C. M.; Bhoraskar, S. V.; Mathe, V. L. [Department of Physics, University of Pune, Pune-7, Maharashtra (India)

2012-06-05T23:59:59.000Z

294

!#"%$'&)(02130546708913@A4B0DC Scott Schaefer, Joe Warren  

E-Print Network (OSTI)

¢¡¤£¦¥¨§©©¡ !#"%$'&)(¤02130546708913£@¡A4B0DC Scott Schaefer, Joe Warren Rice UniversityE: for each edge in the grid that contains a sign change (i.e.; the vertices on its end- points these methods primal methods. i e-mail: p sschaefe,jwarrenq @rice.edu Figure 1: A sphere contoured using

Warren, Joe

295

Basic DC Meter Design ECE 2100 Circuit Analysis Laboratory  

E-Print Network (OSTI)

Basic DC Meter Design ECE 2100 Circuit Analysis Laboratory updated 8 January 2008 Pre-Laboratory Assignment 1. Design an ammeter with full scale current IFS equal to 5 mA using a meter movement rated at 0.5 mA and 100 mV. 2. Design a voltmeter with a full scale voltage VFS equal to 10 V using the meter

Miller, Damon A.

296

A dc superconducting fault current limiter using die-pressed  

Science Journals Connector (OSTI)

A model of a superconducting fault current limiter on a polycrystalline high-temperature superconductor basis is checked in the dc short circuit regime. Protection of load takes place under the conditions described in this paper. The use of ceramic materials with superconducting-normal metal-superconducting Josephson junction network having an S-type current-voltage characteristic (CVC) is shown to be effective for fault current limiter devices.

A G Mamalis; M I Petrov; D A Balaev; K A; D M Gohfeld; S V Militsyn; S G; V I Kirko; I N Vottea

2001-01-01T23:59:59.000Z

297

Report on Non-Contact DC Electric Field Sensors  

SciTech Connect

This document reports on methods used to measure DC electrostatic fields in the range of 100 to 4000 V/m using a non-contact method. The project for which this report is written requires this capability. Non-contact measurements of DC fields is complicated by the effect of the accumulation of random space-charges near the sensors which interfere with the measurement of the field-of-interest and consequently, many forms of field measurements are either limited to AC measurements or use oscillating devices to create pseudo-AC fields. The intent of this document is to report on methods discussed in the literature for non-contact measurement of DC fields. Electric field meters report either the electric field expressed in volts per distance or the voltage measured with respect to a ground reference. Common commercial applications for measuring static (DC) electric fields include measurement of surface charge on materials near electronic equipment to prevent arcing which can destroy sensitive electronic components, measurement of the potential for lightning to strike buildings or other exposed assets, measurement of the electric fields under power lines to investigate potential health risks from exposure to EM fields and measurement of fields emanating from the brain for brain diagnostic purposes. Companies that make electric field sensors include Trek (Medina, NY), MKS Instruments, Boltek, Campbell Systems, Mission Instruments, Monroe Electronics, AlphaLab, Inc. and others. In addition to commercial vendors, there are research activities continuing in the MEMS and optical arenas to make compact devices using the principles applied to the larger commercial sensors.

Miles, R; Bond, T; Meyer, G

2009-06-16T23:59:59.000Z

298

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

299

Maryland DC Virginia Solar Energy Industries Association MDV SEIA | Open  

Open Energy Info (EERE)

DC Virginia Solar Energy Industries Association MDV SEIA DC Virginia Solar Energy Industries Association MDV SEIA Jump to: navigation, search Name Maryland-DC-Virginia Solar Energy Industries Association (MDV-SEIA) Place Bethesda, Maryland Zip 20814-3954 Sector Solar Product Trade associaton to promote solar equipment in the Mid-Atlantic region in US. Coordinates 40.020185°, -81.073819° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.020185,"lon":-81.073819,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

300

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
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301

Multiphase soft switched DC/DC converter and active control technique for fuel cell ripple current elimination  

DOE Patents (OSTI)

DC/DC converter has a transformer having primary coils connected to an input side and secondary coils connected to an output side. Each primary coil connects a full-bridge circuit comprising two switches on two legs, the primary coil being connected between the switches on each leg, each full-bridge circuit being connected in parallel wherein each leg is disposed parallel to one another, and the secondary coils connected to a rectifying circuit. An outer loop control circuit that reduces ripple in a voltage reference has a first resistor connected in series with a second resistor connected in series with a first capacitor which are connected in parallel with a second capacitor. An inner loop control circuit that reduces ripple in a current reference has a third resistor connected in series with a fourth resistor connected in series with a third capacitor which are connected in parallel with a fourth capacitor.

Lai, Jih-Sheng (Blacksburg, VA); Liu, Changrong (Sunnyvale, CA); Ridenour, Amy (Salem, VA)

2009-04-14T23:59:59.000Z

302

Growth and characterization of M-plane GaN and (In,Ga)N/GaN multiple quantum wells.  

E-Print Network (OSTI)

??Thema dieser Arbeit ist die Synthese von Wurtzit M-plane (In,Ga)N(1-100)-Heterostrukturen auf g-LiAlO2(100) mittels plasmaunterstützter Molekularstrahlepitaxie (MBE). Der Einfluß der Wachstumsbedingungen auf die strukturellen, morphologischen, und… (more)

Sun, Yue-Jun

2004-01-01T23:59:59.000Z

303

Development of Polarized Electron Source of GaAs-AlGaAs Superlattice and Strained GaAs  

Science Journals Connector (OSTI)

At Nagoya University, we have continued the development of GaAs polarized electron source (PES) for several years. Our test ... a gun producing (1–5) KeV polarized electrons and a standard 100 KeV Mott polarimete...

T. Nakanishi; S. Nakamura

1991-01-01T23:59:59.000Z

304

DC Regional High School Science Bowl | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

DC Regions » DC Regional High DC Regions » DC Regional High School Science Bowl National Science Bowl® (NSB) NSB Home About High School High School Students High School Coaches High School Regionals High School Rules, Forms, and Resources Middle School Attending National Event Volunteers 2013 Competition Results News Media WDTS Home Contact Information National Science Bowl® U.S. Department of Energy SC-27/ Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: 202-586-6702 E: National.Science.Bowl@science.doe.gov Washington DC Regions DC Regional High School Science Bowl Print Text Size: A A A RSS Feeds FeedbackShare Page Regional Coordinator Information Name: Jamie T. Scipio Email: jamie.scipio@hq.doe.gov Regional Event Information Date: Saturday, February 22, 2014 Maximum Number of Teams: 12

305

News From the D.C. Office: Energy-Saving Office Equipment Part 2  

NLE Websites -- All DOE Office Websites (Extended Search)

3 Aerial view of Washington D.C. 3 Aerial view of Washington D.C. News From the D.C. Office Energy-Saving Office Equipment Part 2: Making the "Virtual Office" Real More on the DC Office efficiency up-grade: Lighting, Office Equipment: Part 1 Regular readers of the Center for Building Science News know that energy-efficient lighting and office equipment can have significant environmental and economic benefits. Previous articles ("Monitored Savings from Energy-Efficient Lighting in D.C. Office" [Spring 1997, p. 3] and "Energy-Saving Office equipment" [Summer 1997, p. 3]) discussed these features of Berkeley Lab's Washington, D.C. office. The D.C. office also serves as a demonstration site for telecommunications technologies, which have energy and environmental benefits of their own.

306

Energy Challenge Two: The WeatherizeDC Campaign | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Energy Challenge Two: The WeatherizeDC Campaign Energy Challenge Two: The WeatherizeDC Campaign Energy Challenge Two: The WeatherizeDC Campaign June 14, 2010 - 9:15am Addthis John Lippert In my quest to learn what other local groups are doing to help the environment and hopefully avoid reinventing the wheel, I attended a meeting of the Greenbelt Climate Action Network, a local chapter of the grassroots, nonprofit organization Chesapeake Climate Action Network. There I met two WeatherizeDC field organizers who described the work they are doing. Terrance and Heather explained that WeatherizeDC is a campaign of The DC Project, a nonprofit based in Washington, D.C., founded by former leaders of the Obama for America campaign around a mission to advance economic and environmental justice by creating clean energy career opportunities for

307

DC Regional Middle School Science Bowl | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

DC Regions » DC Regional Middle DC Regions » DC Regional Middle School Science Bowl National Science Bowl® (NSB) NSB Home About High School Middle School Middle School Students Middle School Coaches Middle School Regionals Middle School Rules, Forms, and Resources Attending National Event Volunteers 2013 Competition Results News Media WDTS Home Contact Information National Science Bowl® U.S. Department of Energy SC-27/ Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: 202-586-6702 E: National.Science.Bowl@science.doe.gov Washington DC Regions DC Regional Middle School Science Bowl Print Text Size: A A A RSS Feeds FeedbackShare Page Regional Coordinator Information Name: Chester Scott Email: chester.scott@hq.doe.gov Regional Event Information Date: Saturday, February 8, 2014 Maximum Number of Teams: 12

308

Solar Decathlon at Home in the D.C. Community | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Solar Decathlon at Home in the D.C. Community Solar Decathlon at Home in the D.C. Community Solar Decathlon at Home in the D.C. Community Addthis A New Energy-Efficient Home in the D.C. Community 1 of 27 A New Energy-Efficient Home in the D.C. Community On December 4, 2012, the Empowerhouse team, along with partners and community members, completed the installation of a permanent, two-family home in Washington, D.C. The home was originally showcased as part of the U.S Department of Energy's Solar Decathlon 2011. Image: Sarah Gerrity Date taken: 2012-12-04 12:22 2 of 27 The house is located in the D.C. neighborhood of Deanwood, which is just 10 miles from the National Mall. By installing the house nearby, the team was able to minimize shipping costs, therefore reducing the house's carbon footprint. Image: Sarah Gerrity

309

Data:D28923dc-45dc-45e5-b62b-3ca789517591 | Open Energy Information  

Open Energy Info (EERE)

923dc-45dc-45e5-b62b-3ca789517591 923dc-45dc-45e5-b62b-3ca789517591 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Northern States Power Co - Minnesota Effective date: 2012/05/01 End date if known: Rate name: SMALL GENERAL TIME OF DAY SERVICE Low Wattage (A22) Sector: Commercial Description: Customer Charge per Month (Please see page 5-24.1) Available to any non-residential customer for single or three phase electric service supplied through one meter. DETERMINATION OF CUSTOMER BILLS Customer bills shall reflect energy charges (if applicable) based on customer's kWh usage, plus a customer charge (if applicable), plus demand charges (if applicable) based on customer's kW billing demand as defined. INTERIM RATE ADJUSTMENT A 4.49% Interim Rate Surcharge will be applied to rate components specified in the "Interim Rate Surcharge Rider." In addition, customer bills under this rate are subject to the following adjustments and/or charges. FUEL CLAUSE Bills are subject to the adjustments provided for in the Fuel Clause Rider. RESOURCE ADJUSTMENT Bills are subject to the adjustments provided for in the Conservation Improvement Program Adjustment Rider, the State Energy Policy Rate Rider, the Renewable Development Fund Rider, the Transmission Cost Recovery Rider, the Renewable Energy Standard Rider and the Mercury Cost Recovery Rider. ENVIRONMENTAL IMPROVEMENT RIDER Bills are subject to the adjustments provided for in the Environmental Improvement Rider.

310

Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures  

SciTech Connect

Using a combination of experimental and theoretical techniques we present the dependence of the bandgap E{sub g} and the spin orbit splitting energy ?{sub so}, with Bi concentration in GaAsBi/GaAs samples. We find that the concentration at which ?{sub so},> E{sub g} occurs at 9%. Both spectroscopic as well as first device results indicate a type I alignment.

Hild, K.; Batool, Z.; Jin, S. R.; Hossain, N.; Marko, I. P.; Sweeney, S. J. [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Hosea, T. JC. [1 Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, UK and also, Ibnu Sina Institute, Universiti Teknologi Malaysia, Johor Bahru, 81310 (Malaysia); Lu, X. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6, Canada and now VarianSemiconductor Equipment Associates, Gloucester, MA 01930 (United States); Tiedje, T. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6 (Canada)

2013-12-04T23:59:59.000Z

311

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

312

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

313

Multiband GaNAsP Quaternary Alloys  

SciTech Connect

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

2005-12-08T23:59:59.000Z

314

Implantation of carbon in GaAs  

SciTech Connect

Carbon implanted into GaAs and thermally annealed typically exhibits very low (<3%) electrical activity. It has been demonstrated that the electrical activity of C can be significantly enhanced by co-implantation with Ga. Improved activation may result from either additional damage of the crystal lattice or from stoichiometric changes, forcing the C atoms onto As sites. To determine the relative importance of each of these effects, I have undertaken a systematic study of carbon activation in GaAs. A range of co-implants have been used: group III (B, Ga), group V (N, P, As) and noble gases (Ar, Kr). The damage introduced to the substrate will depend on the mass of the ion implanted. The group III and group V co-implants will affect the crystal stoichiometry. The results indicate that both lattice damage and crystal stoichiometry are important for high electrical activity of C. Increasing the damage will increase the activation due to the increased number of As vacancies but maximum activation can be obtained only by a co-implant which not only damages the lattice but also forces the C to occupy an As site.

Moll, A.J.

1992-03-01T23:59:59.000Z

315

O?[]O? nuclear ?-decay of ?²Ga  

E-Print Network (OSTI)

The branching ratio for the ?-Decay of ?²Ga to the first excited O? state in ?²Zn has been measured. It is possible to use this branching ratio to test the theoretical method of calculating the [] component of the charge correction term [], which...

Hyman, Bruce Carl

2012-06-07T23:59:59.000Z

316

Communication accepte: Healthy Buildings/IAQ'97 Washington DC, septembre 1997Communication accepte: Healthy Buildings/IAQ'97 Washington DC, septembre 1997 DISCRIMINATION OF VOLATILE ORGANIC COMPOUNDS  

E-Print Network (OSTI)

Communication acceptée: Healthy Buildings/IAQ'97 Washington DC, septembre 1997Communication acceptée: Healthy Buildings/IAQ'97 Washington DC, septembre 1997 DISCRIMINATION OF VOLATILE ORGANIC manuscript, published in "4th International Conference on Healthy Buildings'97, Washington : United States

Paris-Sud XI, Université de

317

Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction  

SciTech Connect

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16° from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

2014-03-17T23:59:59.000Z

318

Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells  

SciTech Connect

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arès, R. [Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, Québec (Canada)] [Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, Québec (Canada); Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K. [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada)] [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Fafard, S. [Cyrium Technologies Inc., Ottawa, ON (Canada)] [Cyrium Technologies Inc., Ottawa, ON (Canada)

2013-09-27T23:59:59.000Z

319

Data:Dde6ed62-e484-4ffc-a3dc-f6680a6b86c5 | Open Energy Information  

Open Energy Info (EERE)

Dde6ed62-e484-4ffc-a3dc-f6680a6b86c5 Dde6ed62-e484-4ffc-a3dc-f6680a6b86c5 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: City of LaFayette, Georgia (Utility Company) Effective date: 2013/04/08 End date if known: Rate name: Economic Development Rate - ED1 Sector: Description: Source or reference: https://cas.sharepoint.illinoisstate.edu/grants/Sunshot/Lists/DATA%20ENTRY%20Additional%20Information%20Obtained/Attachments/72/City%20of%20LaFayette%20GA%20rates.pdf Source Parent: Comments Applicability Demand (kW) Minimum (kW): Maximum (kW): History (months): Energy (kWh) Minimum (kWh): Maximum (kWh): History (months):

320

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors  

SciTech Connect

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

Yang, Jie, E-mail: jie.yang@yale.edu; Cui, Sharon; Ma, T. P. [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)] [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)] [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

2013-11-25T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Proposal of DC shield reactor type superconducting fault current limiter  

Science Journals Connector (OSTI)

Saturated DC reactor type superconducting fault current limiter (SFCL) had been proposed two years ago. It was classified to rectifier type SFCL. The changing inductance value with the operating mode has superior characteristics to reduce voltage sag during step increase of the load current. But it has the disadvantage of its weight. In this paper, rectifier type SFCL with shielded reactor has been proposed. The reactor which has superconducting ring or tube inside its winding is substituted to the DC link of the rectifier. The configuration looks like an air core transformer with secondary short winding. When the current through the bulk shield-ring reaches to a certain level, the flux penetrates to the shield body and finite impedance appears in the primary winding. In other words, when the surface flux density exceeds its critical flux density, the flux penetrates into the bulk superconductor, and increases equivalent inductance. The equivalent transient resistance of the shield was represented as a function of exponential of the time. Using this equivalent transient resistance, the transient impedance was expressed. The transient wave analysis using EMTDC (electro-magnetic transients in DC systems) has been described. Simulated waveforms are shown considering the source inductance, the leakage inductance, the coupling coefficient and the forward voltage drop of the semiconductor. And voltage sag was also investigated with 50% step load increase. Preliminary design was also performed. The coil size and number of turns are designed to obtain adequate inductance for the current limitation, and the central magnetic field of the coils are calculated. There is optimal aspect ratio to minimize the magnetic field with restriction in outer diameter of the coil.

Itsuya Muta; Tsutomu Hoshino; Khosru Mohammad Salim; Akio Kawasaki; Taketsune Nakamura; Masato Yamada

2004-01-01T23:59:59.000Z

322

DC Resistivity Survey (Wenner Array) | Open Energy Information  

Open Energy Info (EERE)

Wenner Array) Wenner Array) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Technique: DC Resistivity Survey (Wenner Array) Details Activities (0) Areas (0) Regions (0) NEPA(0) Exploration Technique Information Exploration Group: Geophysical Techniques Exploration Sub Group: Electrical Techniques Parent Exploration Technique: Vertical Electrical Sounding Configurations Information Provided by Technique Lithology: Rock composition, mineral and clay content Stratigraphic/Structural: Detection of permeable pathways, fracture zones, faults Hydrological: Resistivity influenced by porosity, grain size distribution, permeability, fluid saturation, fluid type and phase state of the pore water Thermal: Resistivity influenced by temperature Dictionary.png

323

DC Resistivity Survey (Pole-Dipole Array) | Open Energy Information  

Open Energy Info (EERE)

Pole-Dipole Array) Pole-Dipole Array) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Technique: DC Resistivity Survey (Pole-Dipole Array) Details Activities (0) Areas (0) Regions (0) NEPA(0) Exploration Technique Information Exploration Group: Geophysical Techniques Exploration Sub Group: Electrical Techniques Parent Exploration Technique: Electrical Profiling Configurations Information Provided by Technique Lithology: Rock composition, mineral and clay content Stratigraphic/Structural: Detection of permeable pathways, fracture zones, faults Hydrological: Resistivity influenced by porosity, grain size distribution, permeability, fluid saturation, fluid type and phase state of the pore water Thermal: Resistivity influenced by temperature Dictionary.png

324

DC Resistivity Survey (Schlumberger Array) | Open Energy Information  

Open Energy Info (EERE)

Schlumberger Array) Schlumberger Array) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Technique: DC Resistivity Survey (Schlumberger Array) Details Activities (2) Areas (2) Regions (0) NEPA(0) Exploration Technique Information Exploration Group: Geophysical Techniques Exploration Sub Group: Electrical Techniques Parent Exploration Technique: Vertical Electrical Sounding Configurations Information Provided by Technique Lithology: Rock composition, mineral and clay content Stratigraphic/Structural: Detection of permeable pathways, fracture zones, faults Hydrological: Resistivity influenced by porosity, grain size distribution, permeability, fluid saturation, fluid type and phase state of the pore water Thermal: Resistivity influenced by temperature

325

Heteroepitaxial Ge-on-Si by DC magnetron sputtering  

SciTech Connect

The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany)] [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany); Patzig, Christian; Berthold, Lutz; Höche, Thomas [Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Straße 1, 06120 Halle (Germany)] [Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Straße 1, 06120 Halle (Germany); Tünnermann, Andreas [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany) [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany); Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena (Germany)

2013-07-15T23:59:59.000Z

326

The dc modeling program (DCMP): Version 2. 0  

SciTech Connect

In this project one of the main objectives was the refinement of tools for the study of HVDC systems. The original software was prepared in project RP1964-2 (EL-4365) as power flow and stability program models for HVDC systems. In this project new modeling capabilities were added to both the power flow and stability models. Additionally, the HVDC specific model capabilities were integrated into a new program, termed the Standalone program, for use in the development and testing of HVDC models. This manual provides technical background for programmers and those interested in understanding, augmenting or transporting the dc models.

Chapman, D.G. (Manitoba HVDC Research Centre, Winnipeg, MB (Canada))

1990-08-01T23:59:59.000Z

327

Infrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a  

E-Print Network (OSTI)

GaP single QW surrounded by AlGaInP waveguide WG and cladding layers, whereas the NIR laser incorporates a GaInfrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a Robert in GaAs-based broad-area laser diodes. Spectrally and spatially resolved scanning optical microscopy

Peinke, Joachim

328

News From the D.C. Office: Monitored Savings from Energy-Efficient Lighting  

NLE Websites -- All DOE Office Websites (Extended Search)

3 Aerial view of Washington D.C. 3 Aerial view of Washington D.C. News From the D.C. Office Monitored Savings from Energy-Efficient Lighting in D.C. Office More on the DC Office efficiency up-grade: Office Equipment: Part 1, Part 2 Figure 1: Lighting energy use profile for a typical exterior office. Berkeley Lab's office in Washington, D.C. is located a few blocks from DOE headquarters, in a five-year-old office building constructed mainly for lease to Federal agencies and their contractors. Despite its recent vintage, the building's standard lighting specifications were far from today's best, cost-effective practice. In designing the build-out plans for offices and meeting rooms in our 7,500-square-foot suite, we wanted to showcase some of the energy-efficient lighting and office equipment developed for DOE's Building Technologies

329

Edison Revisited: Should we use DC Circuits for Lighting in Commercial  

NLE Websites -- All DOE Office Websites (Extended Search)

Edison Revisited: Should we use DC Circuits for Lighting in Commercial Edison Revisited: Should we use DC Circuits for Lighting in Commercial Buildings? Speaker(s): Brinda Thomas Date: March 7, 2012 - 12:30pm Location: 90-3122 Seminar Host/Point of Contact: Chris Marnay This seminar summarizes work from a forthcoming Energy Policy paper and thoughts on future work to understand the economics of DC building circuits. We examined the economic feasibility of a general application of DC building circuits to operate commercial lighting systems. We compare light-emitting diodes (LEDs) and fluorescents that are powered by either a central DC power supply or traditional AC grid electricity, with and without solar photovoltaics (PV) and battery back-up. We find that there are limited life-cycle ownership cost and capital cost benefits of DC

330

Inductively coupled plasma–reactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl{sub 3} pretreatment in Cl{sub 2}/Ar plasma chemistry  

SciTech Connect

Inductively coupled plasma (ICP)–reactive ion etching (RIE) patterning is a standard processing step for UV and optical photonic devices based on III-nitride materials. There is little research on ICP-RIE of high Al-content AlGaN alloys and for nonpolar nitride orientations. The authors present a comprehensive study of the ICP-RIE of c- and a-plane AlGaN in Cl{sub 2}/Ar plasma over the entire Al composition range. The authors find that the etch rate decreases in general with increasing Al content, with different behavior for c- and a-plane AlGaN. They also study the effect of BCl{sub 3} deoxidizing plasma pretreatment. An ICP deoxidizing BCl{sub 3} plasma with the addition of argon is more efficient in removal of surface oxides from Al{sub x}Ga{sub 1?x}N than RIE alone. These experiments show that Al{sub x}Ga{sub 1?x}N etching is affected by the higher binding energy of AlN and the higher affinity of oxygen to aluminum compared to gallium, with oxides on a-plane AlGaN more difficult to etch as compared to oxides on c-plane AlGaN, specifically for high Al composition materials. The authors achieve reasonably high etch rate (?350 nm/min) for high Al-content materials with a smooth surface morphology at a low DC bias of ??45 VDC.

Shah, Amit P.; Laskar, Masihhur R.; Azizur Rahman, A.; Gokhale, Maheshwar R.; Bhattacharya, Arnab [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005 (India)] [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005 (India)

2013-11-15T23:59:59.000Z

331

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell  

SciTech Connect

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-01-01T23:59:59.000Z

332

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network (OSTI)

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

333

Monolithic integration of GaAs and h~~~~Ga~.~Aslasers by molecular epitaxy on GaAs  

E-Print Network (OSTI)

where the thick cladding layer below the active laser region acts as a buffer layer to-yield comparable epitaxial regrowth of Ino.aGaesAs lasers through dielectric masks between GaAs laser stripes on a GaAs substrate has been used for the -first time- to monolithically integrate these two lasers emitting near 1

334

Kohlenstoffhaltige ternäre Verbindungen (V-Ge-C, Nb-Ga-C, Ta-Ga-C, Ta-Ge-C, Cr-Ga-C und Cr-Ge-C)  

Science Journals Connector (OSTI)

Die ternären Phasen V2GeC, Cr2GaC und Cr2GeC werden aus den Komponenten hergestellt und als H-Phasen identifiziert. Ferner dürften auch die H-Phasen Ti2GaC, und Ti2GeC existieren. In gleicher Weise hergestellte L...

W. Jeitschko; H. Nowotny; F. Benesovsky

1963-01-01T23:59:59.000Z

335

Washington, D.C. and Indiana: Allison Hybrid Technology Achieves Commercial Success  

Office of Energy Efficiency and Renewable Energy (EERE)

EERE partner, Allison Transmission, Inc., has achieved commercial success in the greater Washington, D.C. area, with 1,480 hybrid buses on the road.

336

Optimizing Energy Savings from Direct-DC in U.S. Residential Buildings  

E-Print Network (OSTI)

Appliance type Standard technology DC-internal best technology Lighting Incandescent, fluorescent, LED Incandescent Electronic Heating Heater Electric resistance Cooling Motor (& compressor,

Garbesi, Karina

2012-01-01T23:59:59.000Z

337

An Active Filter Approach to the Reduction of the DC Link Capacitor  

Energy.gov (U.S. Department of Energy (DOE))

2009 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C.

338

Design and Modeling of Centralized Distribution Network for the DC House Project.  

E-Print Network (OSTI)

?? This thesis focuses on the design, modeling, simulation, and performance evaluation of Centralized Distribution Network for the DC House Project. Power System Computer Aided… (more)

Bassi, Harpreet S.

2013-01-01T23:59:59.000Z

339

A Segmented Drive Inverter Topology with a Small DC Bus Capacitor  

Energy.gov (U.S. Department of Energy (DOE))

2010 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C.

340

Variations of energies and line shapes of the electroreflectance spectra of epitaxial Al x Ga1?x As  

Science Journals Connector (OSTI)

The electrolyte electroreflectance (EER) spectra of Al x Ga1?x As have been obtained in the E 0 and E 1 regions and for Al concentrations ranging from x=0 to 0.65. From the spectra obtained under low field conditions the variations of the interband energies with Al concentrations have been established. Following Aspnes [Surf. Sci. 3 7 419 (1973)] we have made detailed analyses of the complex resonance line shapes of the experimentally observed modulated reflectance spectra. The parameters ? and E g have been calculated and these have been used to generate theoretically the spectra for comparison with experimental results. In addition we have also examined the effects of dc bias on the EER spectra. Variations of E 0 E 0+?0 E 1 and E 1+?1 have been discussed and results on the line?shape parameters have been presented.

J. M. Wrobel; L. C. Bassett; J. L. Aubel; S. Sundaram; John L. Davis; James Comas

1987-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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341

Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes[Multiple Quantum Wells  

SciTech Connect

AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

Hansen, M.; Abare, A.C.; Kozodoy, P.; Katona, T.M.; Craven, M.D.; Speck, J.S.; Mishra, U.K.; Coldren, L.A.; DenBaars, S.P.

2000-07-01T23:59:59.000Z

342

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

343

Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures  

SciTech Connect

The influence of cladding doping level on the characteristics of laser diodes, which are based on an AlGaInP/GaInP/GaAs system and emit at wavelengths of 670-680 nm, is studied. It is shown experimentally that, as the ratio of the cladding doping levels P/N increases, the inversion current density J{sub 0} and the differential gain {beta} also increase. A monotonic increase in the characteristic temperature T{sub 0} accompanies this process. The internal quantum yield {eta}{sub 0} of stimulated recombination has a maximum at P/N=2.1. Laser diodes with a mesastripe width of 100 {mu}m are manufactured. The cw radiation power emitted by them is as high as 1000 mW at an efficiency of 1.55 W A{sup -1}. (active media. lasers)

Chel'nyi, A A; Aluev, A V; Maslov, S V [M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)

2004-01-31T23:59:59.000Z

344

Graphene in ohmic contact for both n-GaN and p-GaN  

SciTech Connect

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26T23:59:59.000Z

345

Efficiency enhancement of InGaN/GaN solar cells with nanostructures  

SciTech Connect

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

2014-02-03T23:59:59.000Z

346

Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN  

Science Journals Connector (OSTI)

Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN...

Yu, Chun-Ta; Lai, Wei-Chih; Yen, Cheng-Hsiung; Hsu, Hsu-Cheng; Chang, Shoou-Jinn

2014-01-01T23:59:59.000Z

347

In: Proceedings of the 1995 International environmental conference; 1995 May 7-10; Atlanta, GA. Atlanta, GA: TAPPI PRESS: 445-448; 1995.  

E-Print Network (OSTI)

. Atlanta, GA: TAPPI PRESS: 445-448; 1995. ENVIRONMENTALLY SOUND ALTERNATIVES FOR UPGRADING MIXED OFFICE

Abubakr, Said

348

Surface Science Analysis of GaAs Photocathodes Following Sustained...  

NLE Websites -- All DOE Office Websites (Extended Search)

Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, strained super-lattice GaAs photocathode samples, removed from the CEBAF...

349

P-type doping of GaN  

SciTech Connect

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

Wong, R.K.

2000-04-10T23:59:59.000Z

350

Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance  

Science Journals Connector (OSTI)

A contacted electroreflectance technique was used to investigate AlGaN/GaN heterostructures and their intrinsic electric field-induced properties. By studying variations in the electroreflectance with applied field spectral features associated with the AlGaN barrier the two-dimensional electron gas at the interface and bulk GaN were identified. Barrier-layer composition and electric field were determined from the AlGaN Franz–Keldysh oscillations. For a high mobilityheterostructure grown on SiC measured AlGaN polarizationelectric field and two-dimensional electron gas density approached values predicted by a standard bandstructure model. The two-dimensional electron gas produced a broad field-tunable first derivative electroreflectance feature. With a dielectric function calculation we describe the line shape and relative amplitude of the two-dimensional electron gas electroreflectance feature for a wide range of electron density and applied field values.

S. R. Kurtz; A. A. Allerman; D. D. Koleske; A. G. Baca; R. D. Briggs

2004-01-01T23:59:59.000Z

351

Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 {mu}m  

SciTech Connect

The spectral-kinetic properties of heterostructures with GaAs/GaAsSb-based and GaAsSb/InGaAs/GaAs-based quantum wells, emitting in the range of 1.0-1.2 {mu}m are studied with picosecond and nanosecond temporal resolution. Intense photoluminescence in the GaAsSb/InGaAs/GaAs structure, as well as an increase in the photoluminescence wavelength by a factor of 2.5 and a shift of the location of the maximum of the peak ({approx}100 meV) to the longer-wavelength region were observed up to room temperature. It is established that as the molar fraction of Sb and the thickness of the InGaAs layer increase, the energy of the fundamental transition decreases by a factor of 140 meV compared with the GaAsSb/InGaAs/GaAs structure with a lower Sb content and a smaller thickness of the InGaAs layer. At 300 K, the emission wavelength of such a structure was 1.18 {mu}m. In addition, an increase in the thickness of the InGaAs layer led to an increase in the room-temperature photoluminescence intensity by a factor of 60, which is associated with a decrease in the energy of the fundamental state for electrons in the InGaAs layer and, consequently, to larger electron localization and smaller temperature quenching of photoluminescence.

Morozov, S. V., E-mail: more@ipm.sci.-nnov.ru; Kryzhkov, D. I.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N.; Vikhrova, O. I. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)] [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

2013-11-15T23:59:59.000Z

352

Vacancy-Induced 2×2 Reconstruction of the Ga(111) Surface of GaAs  

Science Journals Connector (OSTI)

Vacancy formation on the GaAs(111) surface is calculated to be strongly exothermic in character. The creation of one vacancy in each 2×2 cell allows the remaining Ga surface atoms to have a large inward relaxation, resulting in a 2.3-eV reduction in energy. It also transforms the polar (111) surface into a nonpolar (110)-like surface. The calculations provide strong support for the vacancy model of Tong et al., which is determined from analysis of low-energy-electron-diffraction data.

D. J. Chadi

1984-05-21T23:59:59.000Z

353

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Néel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

354

Observation of photo darkening in self assembled InGaAs/GaAs quantum dots  

SciTech Connect

Photo darkening was observed in epitaxial InGaAs/GaAs quantum dots (QDs). The photoluminescence (PL) intensity of the QDs showed a non-reversible decrease under continuous laser irradiation. The time constants varied from tens of minutes to several hours, depending on the applied laser power. Based on the spectral evolution, it was concluded that the observed phenomenon should originate from laser induced structural damage and a sustained increase of non-radiative recombination rate in the wetting layer. Additionally, according to the PL decay dynamics at different laser powers, it is argued that there should exist other processes that hinder PL degradation at a high laser power.

Zhang Hongyi; Chen Yonghai; Zhou Xiaolong; Jia Yanan; Ye Xiaoling; Xu Bo; Wang Zhanguo [Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

2013-05-07T23:59:59.000Z

355

Data:32e71087-dc4e-4f67-a64d-c27cf8411705 | Open Energy Information  

Open Energy Info (EERE)

-dc4e-4f67-a64d-c27cf8411705 -dc4e-4f67-a64d-c27cf8411705 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: City of Rockwood, Tennessee (Utility Company) Effective date: 2012/12/01 End date if known: Rate name: Outdoor Lighting HPS 200w Sector: Lighting Description: ROCKWOOD ELECRIC UTILITY can install a private security light on your residential or commercial property under most conditions. All new requests for outdoor lighting require the applicant to sign a minimum two year contract for security lighting service. If you have security concerns and would like to discuss outdoor lighting options, please contact our Engineering Department to look at the situation with you.

356

Data:692a2dc0-44ed-44ef-a5d9-f42dc3f27436 | Open Energy Information  

Open Energy Info (EERE)

dc0-44ed-44ef-a5d9-f42dc3f27436 dc0-44ed-44ef-a5d9-f42dc3f27436 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Tri-County Elec Member Corp (Tennessee) Effective date: 2013/06/01 End date if known: Rate name: 400 Watt MV Sector: Lighting Description: Source or reference: http://www.tcemc.org/index.php/residential-information/ Source Parent: Comments Applicability Demand (kW) Minimum (kW): Maximum (kW): History (months): Energy (kWh) Minimum (kWh): Maximum (kWh): History (months): Service Voltage Minimum (V): Maximum (V): Character of Service Voltage Category: Phase Wiring: << Previous 1 2 3 Next >>

357

Data:5df914dc-748a-4757-980d-c7fa8bd9d9fe | Open Energy Information  

Open Energy Info (EERE)

dc-748a-4757-980d-c7fa8bd9d9fe dc-748a-4757-980d-c7fa8bd9d9fe No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Sumter Electric Member Corp Effective date: 2012/01/01 End date if known: Rate name: Outdoor Lighting Off- Roadway HPS 250 W Sector: Lighting Description: * Fixed Monthly Charge does not include monthly pole rate charges Source or reference: http://www.sumteremc.com/pdfs/OL-9.pdf Source Parent: Comments Applicability Demand (kW) Minimum (kW): Maximum (kW): History (months): Energy (kWh) Minimum (kWh): Maximum (kWh): History (months): Service Voltage Minimum (V): Maximum (V): Character of Service

358

Data:73d310b4-d5f4-48dc-b4dc-9aca99090e47 | Open Energy Information  

Open Energy Info (EERE)

0b4-d5f4-48dc-b4dc-9aca99090e47 0b4-d5f4-48dc-b4dc-9aca99090e47 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Village of Black Earth, Wisconsin (Utility Company) Effective date: 1999/08/01 End date if known: Rate name: Ms-1 Outdoor Lighting Service: Athletic Field Lighting Sector: Lighting Description: Application: This schedule will be applied to municipal street lighting. The utility will furnish, install, and maintain street lighting units. Fixed Monthly Charge includes Commitment to Community Rider: $1.33 per customer per month. Power Cost Adjustment Clause: Charge per all kWh varies monthly.

359

Tunneling in a linear B2H6-HCI dimer Carl Chuang, T. D. Klots, FL S. Ruoff, Tryggvi Emilsson, and H. S. Gutowsky  

E-Print Network (OSTI)

February 1991; accepted 23 April 1991) Rotational spectra have been observed for eight isotopic species homonuclear in the boron were observed to tunnel while those with "B"BH, or DC1 did not. The tunneling splits?, DJ, H, (B-C), and DJK constants determined for '`B,H,-H3'C1 are for the A, tunneling state 1273

360

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Research, Washington, DC (United States) Sandia National Labs.,  

Office of Scientific and Technical Information (OSTI)

584878 SAND--95-2914 GeoEnergy technology 1980-12-31 USDOE Office of Energy 584878 SAND--95-2914 GeoEnergy technology 1980-12-31 USDOE Office of Energy Research, Washington, DC (United States) Sandia National Labs., Albuquerque, NM (United States) English 2010-02-18 Technical Report http://www.osti.gov/geothermal/servlets/purl/584878-P1qAuZ/webviewable/ http://www.osti.gov/energycitations/product.biblio.jsp?osti_id=584878 29 ENERGY PLANNING AND POLICY; RESEARCH PROGRAMS; COAL; PETROLEUM; NATURAL GAS; SYNTHETIC PETROLEUM; GEOTHERMAL ENERGY; ENERGY CONVERSION; PRODUCTION; HEAT EXTRACTION; US DOE; IN-SITU GASIFICATION; ENHANCED RECOVERY; COAL LIQUEFACTION; GEOTHERMAL WELLS Geothermal Legacy 894529 894529 Use of Geothermal Energy for Aquaculture Purposes - Phase III Johnson, W.C.; Smith, K.C. 1981-09-01 USDOE Geo-Heat Center, Klamath Falls, OR English

362

Disc rotors with permanent magnets for brushless DC motor  

SciTech Connect

A brushless dc permanent magnet motor drives an autonomous underwater vehe. In one embodiment, the motor comprises four substantially flat stators in stacked relationship, with pairs of the stators axially spaced, each of the stators comprising a tape-wound stator coil, and first and second substantially flat rotors disposed between the spaced pairs of stators. Each of the rotors includes an annular array of permanent magnets embedded therein. A first shaft is connected to the first rotor and a second, concentric shaft is connected to the second rotor, and a drive unit causes rotation of the two shafts in opposite directions. The second shaft comprises a hollow tube having a central bore in which the first shaft is disposed. Two different sets of bearings support the first and second shafts. In another embodiment, the motor comprises two ironless stators and pairs of rotors mounted on opposite sides of the stators and driven by counterrotating shafts.

Hawsey, Robert A. (Oak Ridge, TN); Bailey, J. Milton (Knoxville, TN)

1992-01-01T23:59:59.000Z

363

FLUXCAP: A flux-coupled ac/dc magnetizing device  

E-Print Network (OSTI)

We report on an instrument for applying ac and dc magnetic fields by capturing the flux from a rotating permanent magnet and projecting it between two adjustable pole pieces. This can be an alternative to standard electromagnets for experiments with small samples or in probe stations in which an applied magnetic field is needed locally, with advantages that include a compact form-factor, very low power requirements and dissipation as well as fast field sweep rates. This flux capture instrument (FLUXCAP) can produce fields from -400 to +400 mT, with field resolution less than 1 mT. It generates static magnetic fields as well as ramped fields, with ramping rates as high as 10 T/s. We demonstrate the use of this apparatus for studying the magnetotransport properties of spin-valve nanopillars, a nanoscale device that exhibits giant magnetoresistance.

Gopman, Daniel B; Kent, Andrew D

2012-01-01T23:59:59.000Z

364

Prismatic Algorithm for Discrete D.C. Programming Problems  

E-Print Network (OSTI)

In this paper, we propose the first exact algorithm for minimizing the difference of two submodular functions (D.S.), i.e., the discrete version of the D.C. programming problem. The developed algorithm is a branch-and-bound-based algorithm which responds to the structure of this problem through the relationship between submodularity and convexity. The D.S. programming problem covers a broad range of applications in machine learning because this generalizes the optimization of a wide class of set functions. We empirically investigate the performance of our algorithm, and illustrate the difference between exact and approximate solutions respectively obtained by the proposed and existing algorithms in feature selection and discriminative structure learning.

Kawahara, Yoshinobu

2011-01-01T23:59:59.000Z

365

Effect of DC voltage pulses on memristor behavior.  

SciTech Connect

Current knowledge of memristor behavior is limited to a few physical models of which little comprehensive data collection has taken place. The purpose of this research is to collect data in search of exploitable memristor behavior by designing and implementing tests on a HP Labs Rev2 Memristor Test Board. The results are then graphed in their optimal format for conceptualizing behavioral patterns. This series of experiments has concluded the existence of an additional memristor state affecting the behavior of memristors when pulsed with positively polarized DC voltages. This effect has been observed across multiple memristors and data sets. The following pages outline the process that led to the hypothetical existence and eventual proof of this additional state of memristor behavior.

Evans, Brian R.

2013-10-01T23:59:59.000Z

366

Discharging a DC bus capacitor of an electrical converter system  

DOE Patents (OSTI)

A system and method of discharging a bus capacitor of a bidirectional matrix converter of a vehicle are presented here. The method begins by electrically shorting the AC interface of the converter after an AC energy source is disconnected from the AC interface. The method continues by arranging a plurality of switching elements of a second energy conversion module into a discharge configuration to establish an electrical current path from a first terminal of an isolation module, through an inductive element, and to a second terminal of the isolation module. The method also modulates a plurality of switching elements of a first energy conversion module, while maintaining the discharge configuration of the second energy conversion module, to at least partially discharge a DC bus capacitor.

Kajouke, Lateef A; Perisic, Milun; Ransom, Ray M

2014-10-14T23:59:59.000Z

367

Multi-terminal Subsystem Model Validation for Pacific DC Intertie  

SciTech Connect

this paper proposes to validate dynamic model of Pacific DC Intertie with the concept of hybrid simulation by combing simulation with PMU measurements. The Playback function available in GE PSLF is adopted for hybrid simulation. It is demonstrated for the first time the feasibility of using Playback function on multi-terminal subsystem. Sensitivity studies are also presented as a result of common PMU measurement quality problem, ie, offset noise and time synchronization. Results indicate a good tolerance of PDCI model generally. It is recommended that requirements should apply to phasor measurements in model validation work to ensure better analysis. Key parameters are identified based on impact of value change to model behavior. Two events are employed for preliminary model validation with PMU measurements. Suggestions are made for PDCI model validation work in the future.

Yang, Bo; Huang, Zhenyu; Kosterev, Dmitry

2008-07-20T23:59:59.000Z

368

Piezoelectric surface acoustical phonon amplification in graphene on a GaAs substrate  

SciTech Connect

We study the interaction of Dirac Fermions in monolayer graphene on a GaAs substrate in an applied electric field by the combined action of the extrinsic potential of piezoelectric surface acoustical phonons of GaAs (piezoelectric acoustical (PA)) and of the intrinsic deformation potential of acoustical phonons in graphene (deformation acoustical (DA)). We find that provided the dc field exceeds a threshold value, emission of piezoelectric (PA) and deformation (DA) acoustical phonons can be obtained in a wide frequency range up to terahertz at low and high temperatures. We found that the phonon amplification rate R{sup PA,DA} scales with T{sub BG}{sup S?1} (S=PA,DA), T{sub BG}{sup S} being the Block?Gru{sup ¨}neisen temperature. In the high-T Block?Gru{sup ¨}neisen regime, extrinsic PA phonon scattering is suppressed by intrinsic DA phonon scattering, where the ratio R{sup PA}/R{sup DA} scales with ?1/?(n), n being the carrier concentration. We found that only for carrier concentration n?10{sup 10}cm{sup ?2}, R{sup PA}/R{sup DA}>1. In the low-T Block?Gru{sup ¨}neisen regime, and for n=10{sup 10}cm{sup ?2}, the ratio R{sup PA}/R{sup DA} scales with T{sub BG}{sup DA}/T{sub BG}{sup PA}?7.5 and R{sup PA}/R{sup DA}>1. In this regime, PA phonon dominates the electron scattering and R{sup PA}/R{sup DA}<1 otherwise. This study is relevant to the exploration of the acoustic properties of graphene and to the application of graphene as an acoustical phonon amplifier and a frequency-tunable acoustical phonon device.

Nunes, O. A. C., E-mail: oacn@unb.br [Institute of Physics, University of Brasilia, Brasilia, 70910-900 DF (Brazil)

2014-06-21T23:59:59.000Z

369

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells  

SciTech Connect

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

2014-01-21T23:59:59.000Z

370

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

371

EE443L: Intermediate Control Lab Lab2: Modeling a DC motor  

E-Print Network (OSTI)

will develop and validate a basic model of a permanent magnet DC motor (Yaskawa Electric, Mini-series, Minertia of a permanent magnet DC motor, the field current is constant (i.e. a constant magnetic field). It can be shown(t) = input voltage eb(t) = back emf if(t) = field current (t) = shaft angle (t) = torque J = moment

Wedeward, Kevin

372

High Dynamic Performance Programmed PWM Control of a Multilevel Inverter with Capacitor DC Sources  

E-Print Network (OSTI)

High Dynamic Performance Programmed PWM Control of a Multilevel Inverter with Capacitor DC Sources inverter consisting of a stan- dard 3-leg inverter supplied by a DC source and three full H-bridges each reactive voltage to the motor while the standard three leg inverter can supply both reactive and active

Tolbert, Leon M.

373

DC WRRC Report No. 127 GROUND WATER RESOURCE ASSESSMENT STUDY FOR  

E-Print Network (OSTI)

of the District of Columbia 4200 Connecticut Ave, NW Building 50, MB 5004 Washington, DC 20008 #12;ABSTRACT TITLE pollution on the District of Columbia's ground water. 'PROJECT STAFF *GOURND WATER RESOURCE ASSESSMENT STUDY Affairs Environmental Regulation Administration Water Resources Management Division Washington, DC 20020

District of Columbia, University of the

374

Superconducting Cables for a.c. and d.c. Power Transmission  

Science Journals Connector (OSTI)

...1973 research-article Superconducting Cables for a.c. and d.c. Power Transmission...power transmission lines. Some present cables are water cooled to increase their current...both a.c. and d.c. superconducting cables are described, with particular attention...

1973-01-01T23:59:59.000Z

375

A new technique to reject dc-link voltage ripple in PWM inverters  

E-Print Network (OSTI)

on the rlc-link, is numerically calculated. Let us assume, Inverfer output frequency f, ? 60 Hz Vs, = 1 pu Dc ? link voltage rrpple = k Vs, ? 0. 2 x Vge = . 2 pu Dc ? link voltage ripple frequency f, = 120 Hz :tfodulation index ? 0. 5 Frequency spectrum...

Shireen, Wajiha

1990-01-01T23:59:59.000Z

376

A nonlinear robust HVDC control for a parallel AC/DC power system  

E-Print Network (OSTI)

A nonlinear robust HVDC control for a parallel AC/DC power system Hongzhi Cai a , Zhihua Qu b. Keywords: Robust control; HVDC; Power system; Stability; Lyapunov method 1. Introduction It has been recognized that, through an HVDC transmission line, fast electronic control can be applied on the DC power

Qu, Zhihua

377

Allele and haplotype distribution for 16 Y-STRs (AmpFlSTR® Y-filer™ kit) in the state of Chihuahua at North Center of Mexico  

Science Journals Connector (OSTI)

The AmpFlSTR® Y-filer™ kit, including 16 Y-STRs was analyzed in 326 males from Chihuahua, at North Central, Mexico. Allele frequencies and gene diversity for each locus were estimated. Four allele duplications, namely DYS389II, DYS390, DYS391 and DYS439; and one allele null at DYS448 were observed in the sample. The haplotype diversity was 99.97 ± 0.3%. The AMOVA results, including a previous report from West of Mexico (Jalisco), showed that most of the genetic variability between these Mexican populations is attributable to intrapopulational differences (99.87%). This result supports a low-genetic differentiation between males from North and West regions of Mexico.

A.B. Gutiérrez-Alarcón; M. Moguel-Torres; A.K. León-Jiménez; G.E. Cuéllar-Nevárez; H. Rangel-Villalobos

2007-01-01T23:59:59.000Z

378

Targeting Metal-A? Aggregates with Bifunctional Radioligand [11C]L2-b and a Fluorine-18 Analogue [18F]FL2-b  

Science Journals Connector (OSTI)

Autoradiography experiments with AD positive and healthy control brain samples were used to determine the specificity of binding for the radioligands compared to [11C]PiB, a known imaging agent for ?-amyloid (A?) aggregates. ... Displacement studies of [11C]L2-b and [18F]FL2-b with PiB and AV-45 determined that L2-b binds to A? aggregates differently from known radiopharmaceuticals. Finally, brain uptake of [11C]L2-b was examined through microPET imaging in healthy rhesus macaque, which revealed a maximum uptake at 2.5 min (peak SUV = 2.0) followed by rapid egress (n = 2). ...

Brian P. Cary; Allen F. Brooks; Maria V. Fawaz; Xia Shao; Timothy J. Desmond; Garrett M. Carpenter; Phillip Sherman; Carole A. Quesada; Roger L. Albin; Peter J. H. Scott

2014-11-09T23:59:59.000Z

379

Measurement of the Inclusive e{\\pm}p Scattering Cross Section at High Inelasticity y and of the Structure Function FL  

E-Print Network (OSTI)

A measurement is presented of the inclusive neutral current e\\pm p scattering cross section using data collected by the H1 experiment at HERA during the years 2003 to 2007 with proton beam energies Ep of 920, 575, and 460 GeV. The kinematic range of the measurement covers low absolute four-momentum transfers squared, 1.5 GeV2 < Q2 < 120 GeV2, small values of Bjorken x, 2.9 \\cdot 10-5 < x < 0.01, and extends to high inelasticity up to y = 0.85. The structure function FL is measured by combining the new results with previously published H1 data at Ep = 920 GeV and Ep = 820 GeV. The new measurements are used to test several phenomenological and QCD models applicable in this low Q2 and low x kinematic domain.

Aaron, F D; Andreev, V; Backovic, S; Baghdasaryan, A; Baghdasaryan, S; Barrelet, E; Bartel, W; Behrend, O; Belov, P; Begzsuren, K; Belousov, A; Bizot, J C; Boudry, V; Bozovic-Jelisavcic, I; Bracinik, J; Brandt, G; Brinkmann, M; Brisson, V; Britzger, D; Bruncko, D; Bunyatyan, A; Buschhorn, G; Bylinkin, A; Bystritskaya, L; Campbell, A J; Cantun Avila, K B; Ceccopieri, F; Cerny, K; Cerny, V; Chekelian, V; Cholewa, A; Contreras, J G; Coughlan, J A; Cvach, J; Dainton, J B; Daum, K; Delcourt, B; Delvax, J; De Wolf, E A; Diaconu, C; Dobre, M; Dodonov, V; Dossanov, A; Dubak, A; Eckerlin, G; Egli, S; Eliseev, A; Elsen, E; Favart, L; Fedotov, A; Felst, R; Feltesse, J; Ferencei, J; Fischer, D J; Fleischer, M; Fomenko, A; Gabathuler, E; Gayler, J; Ghazaryan, S; Glazov, A; Goerlich, L; Gogitidze, N; Gouzevitch, M; Grab, C; Grebenyuk, A; Greenshaw, T; Grell, B R; Grindhammer, G; Habib, S; Haidt, D; Helebrant, C; Henderson, R C.W; Hennekemper, E; Henschel, H; Herbst, M; Herrera, G; Hildebrandt, M; Hiller, K H; Hoffmann, D; Horisberger, R; Hreus, T; Huber, F; Jacquet, M; Janssen, X; Jonsson, L; Jung, A W; Jung, H; Kapichine, M; Katzy, J; Kenyon, I R; Kiesling, C; Klein, M; Kleinwort, C; Kluge, T; Knutsson, A; Kogler, R; Kostka, P; Kraemer, M; Kretzschmar, J; Kruger, K; Kutak, K; Landon, M P.J; Lange, W; Lastovicka-Medin, G; Laycock, P; Lebedev, A; Lendermann, V; Levonian, S; Lipka, K; List, B; List, J; Loktionova, N; Lopez-Fernandez, R; Lubimov, V; Makankine, A; Malinovski, E; Marage, P; Martyn, H U; Maxfield, S J; Mehta, A; Meyer, A B; Meyer, H; Meyer, J; Mikocki, S; Milcewicz-Mika, I; Moreau, F; Morozov, A; Morris, J V; Mozer, M U; Mudrinic, M; Muller, K; Naumann, Th; Newman, P R; Niebuhr, C; Nikiforov, A; Nikitin, D; Nowak, G; Nowak, K; Olsson, J E; Osman, S; Ozerov, D; Pahl, P; Palichik, V; Panagoulias, I; Pandurovic, M; Papadopoulou, Th; Pascaud, C; Patel, G D; Perez, E; Petrukhin, A; Picuric, I; Piec, S; Pirumov, H; Pitzl, D; Placakyte, R; Pokorny, B; Polifka, R; Povh, B; Radescu, V; Raicevic, N; Ravdandorj, T; Reimer, P; Rizvi, E; Robmann, P; Roosen, R; Rostovtsev, A; Rotaru, M; Ruiz Tabasco, J E; Rusakov, S; Salek, D; Sankey, D P.C; Sauter, M; Sauvan, E; Schmitt, S; Schoeffel, L; Schoning, A; Schultz-Coulon, H C; Sefkow, F; Shtarkov, L N; Shushkevich, S; Sloan, T; Smiljanic, I; Soloviev, Y; Sopicki, P; South, D; Spaskov, V; Specka, A; Staykova, Z; Steder, M; Stella, B; Stoicea, G; Straumann, U; Sykora, T; Thompson, P D; Toll, T; Tran, T H; Traynor, D; Truol, P; Tsakov, I; Tseepeldorj, B; Tsurin, I; Turnau, J; Urban, K; Valkarova, A; Vallee, C; Van Mechelen, P; Vargas, A; Vazdik, Y; von den Driesch, M; Wegener, D; Wunsch, E; Zacek, J; Zalesak, J; Zhang, Z; Zhokin, A; Zohrabyan, H; Zomer, F

2011-01-01T23:59:59.000Z

380

Washington DC Regions | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Washington DC Regions Washington DC Regions National Science Bowl® (NSB) NSB Home About High School Middle School Middle School Students Middle School Coaches Middle School Regionals Middle School Rules, Forms, and Resources Attending National Event Volunteers 2013 Competition Results News Media WDTS Home Contact Information National Science Bowl® U.S. Department of Energy SC-27/ Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: 202-586-6702 E: National.Science.Bowl@science.doe.gov Middle School Regionals Washington DC Regions Print Text Size: A A A RSS Feeds FeedbackShare Page Washington, DC Coaches can review the middle school regional locations listed below. Please note: Registrations are based on the location of your school. Please be sure to select the regional that is designated for your

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Washington DC Regions | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Washington DC Regions Washington DC Regions National Science Bowl® (NSB) NSB Home About High School High School Students High School Coaches High School Regionals High School Rules, Forms, and Resources Middle School Attending National Event Volunteers 2013 Competition Results News Media WDTS Home Contact Information National Science Bowl® U.S. Department of Energy SC-27/ Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P: 202-586-6702 E: National.Science.Bowl@science.doe.gov High School Regionals Washington DC Regions Print Text Size: A A A RSS Feeds FeedbackShare Page Washington, DC Coaches can review the high school regional locations listed below. Please note: Registrations are based on the location of your school. Please be sure to select the regional that is designated for your

382

D.C. Community Comes Together in the Name of Sustainability, Affordability  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

D.C. Community Comes Together in the Name of Sustainability, D.C. Community Comes Together in the Name of Sustainability, Affordability D.C. Community Comes Together in the Name of Sustainability, Affordability July 1, 2011 - 1:02pm Addthis Community leaders and members of the The New School for Design and Stevens Institute of Technology Solar Decathlon team.| Courtesy of Lisa Bleich Community leaders and members of the The New School for Design and Stevens Institute of Technology Solar Decathlon team.| Courtesy of Lisa Bleich Erin R. Pierce Erin R. Pierce Digital Communications Specialist, Office of Public Affairs What are the key facts? This 2011 Solar Decathlon team is partnering with D.C. community members and Habitat for Humanity to build an energy efficient home that will be moved to the Deanwood neighborhood of Washington, D.C. following

383

Harnessing the Power of the Sun, Solar Impulse Plane Lands in DC Area |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Harnessing the Power of the Sun, Solar Impulse Plane Lands in DC Harnessing the Power of the Sun, Solar Impulse Plane Lands in DC Area Harnessing the Power of the Sun, Solar Impulse Plane Lands in DC Area June 17, 2013 - 6:15pm Addthis Watch Energy Secretary Ernest Moniz give remarks at the Solar Impulse Press Conference in Washington, D.C. Erin R. Pierce Erin R. Pierce Digital Communications Specialist, Office of Public Affairs More on Solar Impulse View a slideshow of photos from today's event on Secretary Moniz's Facebook Page. Today, Secretary Moniz spoke at an event welcoming the arrival of the solar-powered Solar Impulse plane at Dulles International Airport near Washington, D.C. During the event, held at the National Air and Space Museum's Steven F. Udvar-Hazy Center, Secretary Moniz highlighted the rapid expansion of the solar industry in the United States over the past

384

Using Direct-DC Power Distribution in U.S. Residential Buildings Can Save  

NLE Websites -- All DOE Office Websites (Extended Search)

Using Direct-DC Power Distribution in U.S. Residential Buildings Can Save Using Direct-DC Power Distribution in U.S. Residential Buildings Can Save Energy October 2013 October-November Special Focus: Energy Efficiency, Buildings and the Electric Grid An increasing fraction of the most efficient appliances on the market operate on direct current (DC) internally, making it possible to use DC from renewable energy systems directly and avoid the losses inherent in converting power to alternating current (AC) and back, as is current practice. Products are also emerging on the commercial market that take advantage of that possibility. Lawrence Berkeley National Laboratory researchers Vagelis Vossos, Karina Garbesi, and Hongxia Shen investigated the potential savings of direct-DC power distribution in net-metered residences with on-site photovoltaics

385

2D Joint Inversion Of Dc And Scalar Audio-Magnetotelluric Data In The  

Open Energy Info (EERE)

Joint Inversion Of Dc And Scalar Audio-Magnetotelluric Data In The Joint Inversion Of Dc And Scalar Audio-Magnetotelluric Data In The Evaluation Of Low Enthalpy Geothermal Fields Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Journal Article: 2D Joint Inversion Of DC And Scalar Audio-Magnetotelluric Data In The Evaluation Of Low Enthalpy Geothermal Fields Details Activities (0) Areas (0) Regions (0) Abstract: Audio-magnetotelluric (AMT) and resistivity (dc) surveys are often used in environmental, hydrological and geothermal evaluation. The separate interpretation of those geophysical data sets assuming two-dimensional models frequently produces ambiguous results. The joint inversion of AMT and dc data is advocated by several authors as an efficient method for reducing the ambiguity inherent to each of those

386

Persons Who Received the DC PSC's Emergency Petition and Complaint via  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Persons Who Received the DC PSC's Emergency Petition and Complaint Persons Who Received the DC PSC's Emergency Petition and Complaint via E-mail on August 24, 2005 Persons Who Received the DC PSC's Emergency Petition and Complaint via E-mail on August 24, 2005 Docket No. EO-05-01: In response to your August 29, 2005 letter, attached please find a list of all entities and organizations to whom we served the District of Columbia Public Service Commission's (HOC PSC") Petition and Complaint filed on August 24, 2005, in the above-referenced proceeding. In addition, attached is the Federal Energy Regulatory Conmlission ("FERC") service list which contains some additional entities that have intervened before the FERC and that have apparently viewed the DC PSC's Petition and Complaint. Persons Who Received the DC PSC's Emergency Petition and Complaint via

387

Grid Modernization Highlighted in Washington DC in September with the Solar  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Grid Modernization Highlighted in Washington DC in September with Grid Modernization Highlighted in Washington DC in September with the Solar Decathlon Grid Modernization Highlighted in Washington DC in September with the Solar Decathlon September 9, 2011 - 4:40pm Addthis Smart Grid is on display at the U.S. Department of Energy 2011 Solar Decathlon, held September 23 through October 2 on the National Mall, West Potomac Park, Washington, DC. The decathlon challenges collegiate teams to design, build, and operate solar-powered houses that are cost-effective, energy-efficient, and attractive. The Office of Electricity Delivery and Energy Reliability will be hosting a booth providing information on grid modernization and smart meters. From Monday September 12 through Thursday September 15, the GridWeek conference was held in Washington, DC. The Office of Electricity Delivery

388

We Have a Winner - DC High School Regional Science Bowl Competition Held  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

We Have a Winner - DC High School Regional Science Bowl Competition We Have a Winner - DC High School Regional Science Bowl Competition Held Last Saturday We Have a Winner - DC High School Regional Science Bowl Competition Held Last Saturday February 11, 2013 - 10:30am Addthis We Have a Winner - DC High School Regional Science Bowl Competition Held Last Saturday Annie Whatley Annie Whatley Deputy Director, Office of Minority Economic Impact As part of the National Science Bowl, more than 9,500 high school students take place in 70 high school regional competitions around the United States and Puerto Rico. The winners of these regions advance to the National Science Bowl competition held every April in Chevy Chase, Maryland. On Saturday, February 9, the Office of Economic Impact and Diversity hosted the Washington, D.C. High School Regional Science Bowl competition at Cesar

389

Small wind turbine emulator with armature controlled separately excited DC motor via analogue electronic circuit  

Science Journals Connector (OSTI)

In this paper, a small wind turbine emulator (WTE) using separately excited DC motor is modelled, designed, simulated, implemented and tested. A 1 HP separately excited DC motor is used to emulate the characteristics of the rotor of small wind turbine. The DC motor is driven by a thyristor bridge with closed-loop cascaded PI controller for armature control. A separately excited DC generator with a variable resistive load is directly coupled to the DC motor. A small cheap analogue electronic circuit, with less interfacing, is used to generate a specific reference wind turbine speed based on the wind turbine rotor characteristics and the mechanical wind power available. Simulation and experimental results are compared to proof the validity and accuracy of the WTE.

A. Mahdy; S.M. El-Hakim; Hanafy Hassan Hanafy

2012-01-01T23:59:59.000Z

390

Adaptive Selective Harmonic Minimization Based on ANNs for Cascade Multilevel Inverters With Varying DC Sources  

SciTech Connect

A new approach for modulation of an 11-level cascade multilevel inverter using selective harmonic elimination is presented in this paper. The dc sources feeding the multilevel inverter are considered to be varying in time, and the switching angles are adapted to the dc source variation. This method uses genetic algorithms to obtain switching angles offline for different dc source values. Then, artificial neural networks are used to determine the switching angles that correspond to the real-time values of the dc sources for each phase. This implies that each one of the dc sources of this topology can have different values at any time, but the output fundamental voltage will stay constant and the harmonic content will still meet the specifications. The modulating switching angles are updated at each cycle of the output fundamental voltage. This paper gives details on the method in addition to simulation and experimental results.

Filho, Faete [ORNL; Maia, Helder Z [UFMS, Department of Electrical Engineering; Mateus, Tiago Henrique D [ORNL; Ozpineci, Burak [ORNL; Tolbert, Leon M [ORNL; Pinto, Joao Onofre P [ORNL

2013-01-01T23:59:59.000Z

391

Harnessing the Power of the Sun, Solar Impulse Plane Lands in DC Area |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Harnessing the Power of the Sun, Solar Impulse Plane Lands in DC Harnessing the Power of the Sun, Solar Impulse Plane Lands in DC Area Harnessing the Power of the Sun, Solar Impulse Plane Lands in DC Area June 17, 2013 - 6:15pm Addthis Watch Energy Secretary Ernest Moniz give remarks at the Solar Impulse Press Conference in Washington, D.C. Erin R. Pierce Erin R. Pierce Digital Communications Specialist, Office of Public Affairs More on Solar Impulse View a slideshow of photos from today's event on Secretary Moniz's Facebook Page. Today, Secretary Moniz spoke at an event welcoming the arrival of the solar-powered Solar Impulse plane at Dulles International Airport near Washington, D.C. During the event, held at the National Air and Space Museum's Steven F. Udvar-Hazy Center, Secretary Moniz highlighted the rapid expansion of the solar industry in the United States over the past

392

Sustainable Energy Utility - D.C. Home Performance (District of Columbia) |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

D.C. Home Performance (District of D.C. Home Performance (District of Columbia) Sustainable Energy Utility - D.C. Home Performance (District of Columbia) < Back Eligibility Multi-Family Residential Residential Savings Category Other Program Info Start Date 06/14/2012 State District of Columbia Program Type Utility Rebate Program Rebate Amount $500 The District of Columbia Sustainable Energy Utility currently offers the D.C. Home Performance program (DCHP). DCHP provides a $500 incentive to properties which successfully complete qualifying home energy upgrades. This incentive is available to D.C. residents living in single-family homes, rowhomes (each unit is ground to sky) or converted (1 to 4 unit) apartments and rowhomes. Both owner-occupied homes and rental properties with the property owners' authorization are eligible to participate.

393

Localized corrosion of GaAs surfaces and formation of porous GaAs  

SciTech Connect

The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

Schmuki, P.; Vitus, C.M.; Isaacs, H.S. [Brookhaven National Lab., Upton, NY (United States); Fraser, J.; Graham, M.J. [National Research Council of Canada, Ottawa, ON (Canada). Inst. for Microstructural Sciences

1995-12-01T23:59:59.000Z

394

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network (OSTI)

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

395

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

396

High energy electron fluxes in dc-augmented capacitively coupled plasmas I. Fundamental characteristics  

SciTech Connect

Power deposition from electrons in capacitively coupled plasmas (CCPs) has components from stochastic heating, Joule heating, and from the acceleration of secondary electrons through sheaths produced by ion, electron, or photon bombardment of electrodes. The sheath accelerated electrons can produce high energy beams which, in addition to producing excitation and ionization in the gas can penetrate through the plasma and be incident on the opposite electrode. In the use of CCPs for microelectronics fabrication, there may be an advantage to having these high energy electrons interact with the wafer. To control the energy and increase the flux of the high energy electrons, a dc bias can be externally imposed on the electrode opposite the wafer, thereby producing a dc-augmented CCP (dc-CCP). In this paper, the characteristics of dc-CCPs will be discussed using results from a computational study. We found that for a given rf bias power, beams of high energy electrons having a narrow angular spread (<1 deg. ) can be produced incident on the wafer. The maximum energy in the high energy electron flux scales as {epsilon}{sub max}=-V{sub dc}+V{sub rf}+V{sub rf0}, for a voltage on the dc electrode of V{sub dc}, rf voltage of V{sub rf}, and dc bias on the rf electrode of V{sub rf0}. The dc current from the biased electrode must return to ground through surfaces other than the rf electrode and so seeks out a ground plane, typically the side walls. If the side wall is coated with a poorly conducting polymer, the surface will charge to drive the dc current through.

Wang Mingmei [Department of Chemical and Biological Engineering, Iowa State University, Ames, Iowa 50010 (United States); Kushner, Mark J. [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

2010-01-15T23:59:59.000Z

397

The development of integrated chemical microsensors in GaAs  

SciTech Connect

Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

1999-11-01T23:59:59.000Z

398

CoNiGa High Temperature Shape Memory Alloys  

E-Print Network (OSTI)

commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

Dogan, Ebubekir

2011-10-21T23:59:59.000Z

399

The Essentials for GA Water Planning The Relationship  

E-Print Network (OSTI)

Water Plan and the Alabama-Florida-Georgia Water Sharing Dispute (The failure to agree on the two Management F. Conservation & Reuse a. Programs for Water Use Efficiency b. Consumptive Use & Return Flows GThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

Rosemond, Amy Daum

400

211 Westcott Building, 222 S. Copeland Avenue, P.O. Box 3061480, Tallahassee, FL 32306-1480 Telephone 850.644.6876, Fax 850.644.3375 http://fda.fsu.edu  

E-Print Network (OSTI)

211 Westcott Building, 222 S. Copeland Avenue, P.O. Box 3061480, Tallahassee, FL 32306 Development and Advancement in Westcott 115 by Friday, March 21, 2014, for submission to the President and Advancement in Westcott 115 for each specialized faculty. Article 14 (and Appendix J of the FSU-BOT UFF

Sura, Philip

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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to obtain the most current and comprehensive results.


401

A. Kusiak, Data Mining and Decision Making, in B.V. Dasarathy (Ed.), Proceedings of the SPIE Conference on Data Mining and Knowledge Discovery: Theory, Tools, and Technology IV, Vol. 4730, SPIE, Orlando, FL, April 2002, pp. 155-165.  

E-Print Network (OSTI)

A. Kusiak, Data Mining and Decision Making, in B.V. Dasarathy (Ed.), Proceedings of the SPIE Conference on Data Mining and Knowledge Discovery: Theory, Tools, and Technology IV, Vol. 4730, SPIE, Orlando, FL, April 2002, pp. 155-165. Data Mining and Decision Making Andrew Kusiak Department of Mechanical

Kusiak, Andrew

402

Structure of a Si(100)2×2-Ga surface  

Science Journals Connector (OSTI)

The 2×2 structure formed on a Ga-adsorbed Si(100) surface is determined using tensor low-energy electron diffraction. I-V curves of the parallel dimer model are in excellent agreement with those of the experiment, indicating that the actual surface has parallel dimer structure. Specific displacements of the topmost two surface layers (the protrusion of the Ga dimer toward the vacuum, the increase of the bond length of the Ga dimer, the stretching of the Si dimer, and the movement of the Si dimer toward the Ga dimer) with the elongation of the Si dimer back bond are observed in the optimized geometry. The Ga-Si bond angle measured from the Si(100) surface plane is recovered with these displacements from that of the ideal geometry where each bond length is assumed to be the sum of Pauling covalent radii. Subsurface layers are also deformed to keep the bond lengths near their bulk values.

H. Sakama; K. Murakami; K. Nishikata; A. Kawazu

1994-11-15T23:59:59.000Z

403

Electronic structure of metallic antiperovskite compound GaCMn3  

Science Journals Connector (OSTI)

We have investigated the electronic structures of antiperovskite GaCMn3 and related Mn compounds SnCMn3, ZnCMn3, and ZnNMn3. In the paramagnetic state of GaCMn3, the Fermi surface nesting feature along the ?R direction is observed, which induces the antiferromagnetic (AFM) spin ordering with the nesting vector Q??R. Calculated susceptibilities confirm the nesting scenario for GaCMn3, and also explain various magnetic structures of other antiperovskite compounds. Through the band folding effect, the AFM phase of GaCMn3 is stabilized. Nearly equal densities of states at the Fermi level in the ferromagnetic and AFM phases of GaCMn3 indicate that two phases are competing in the ground state.

J. H. Shim; S. K. Kwon; B. I. Min

2002-07-10T23:59:59.000Z

404

Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers  

Science Journals Connector (OSTI)

In0.135Ga0.865N/GaN p–i–n solar cells are fabricated and investigated with three types of transparent current spreading layers (TCSLs): Ni/Au layer type (Ni/Au-L), Ni/Au grid type (Ni/Au-G), and ITO layer type (I...

X. M. Cai; Y. Wang; Z. D. Li; X. Q. Lv; J. Y. Zhang; L. Y. Ying…

2013-05-01T23:59:59.000Z

405

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics  

E-Print Network (OSTI)

injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

Klotzkin, David

406

Surface roughening during depth profiling by Secondary Ion Mass Spectrometry (SIMS) in GaAlAs and GaAs  

Science Journals Connector (OSTI)

During bombardment of Ga1?xAlxAs and GaAs with oxygen we found an abrupt transition to higher sputter rates, change of the useful yield and significant increase of surface roughness at a well defined depth, which...

M. Gericke; T. Lill; M. Trapp; C. -E. Richter…

407

GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization  

E-Print Network (OSTI)

radiation hardness than Si, GaAs, CdS and GaN, therefore it should be suitable for space applications. Last novel optoelectronic devices circumventing the problem of p-type doping of ZnO. In such Al devices become reality: the problem of p-type doping of ZnO. So far, there is no way to reliably produce

Wetzel, Christian M.

408

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network (OSTI)

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

409

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network (OSTI)

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm GaN-on-Si...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

410

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network (OSTI)

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

411

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network (OSTI)

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

412

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1  

E-Print Network (OSTI)

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1 Jie Lian,2,3 Wei Lu,4 and Lumin Wang1,5,* 1 Department of Materials Science and Engineering, University Arbor, Michigan 48109, USA 3 Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer

Lu, Wei

413

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network (OSTI)

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

414

Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics  

SciTech Connect

In this letter we report on the inductively coupled plasma reactive ion etching (ICP-RIE) of InGaAsSb and AlGaAsSb for the fabrication of quaternary monolithic interconnected module (MIM) thermophotovoltaic (TPV) devices. A rapid dry etch process is described that produces smooth surfaces using BCl[sub]3 for AlGaAsSb and InGaAsSb capped with GaSb. Uncapped InGaAsSb was etched by adding an H[sub]2 plasma preclean to reduce surface oxides. InGaAsSb etch rate was studied as a function of accelerating voltage, RF power, temperature and pressure. The etch conditions found for InGaAsSb were used for AlGaAsSb etching to determine the effectiveness for isolation of the MIM cells.

Palmisiano, M. N.; Peake, G. M.; Shul, R. J.; Ashby, C. I.; Cederberg, J. G.; Hafich, M. J.; Biefeld, R. M.

2002-10-01T23:59:59.000Z

415

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

416

Magnetic-field effects on quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells  

Science Journals Connector (OSTI)

We have used the variational procedure in the effective-mass and nondegenerate parabolic band approximations in order to investigate the effects of a magnetic field on the exciton effective mass and dispersion in semiconductor heterostructures. Calculations are performed for bulk GaAs, and two-dimensional and quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells for applied magnetic fields perpendicular to the layers. A simple hydrogenlike envelope wave function provides the expected behavior for the exciton dispersion in a wide range of the center-of-mass momenta, and an analytical expression for the exciton effective mass is obtained. Present results lead to a magnetic-field dependent exciton effective mass and dispersion in quite good agreement with available experimental measurements in coupled GaAs?(Ga,Al)As quantum wells.

E. Reyes-Gómez, L. E. Oliveira, and M. de Dios-Leyva

2005-01-14T23:59:59.000Z

417

Solar Decathlon at Home in the D.C. Community | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

at Home in the D.C. Community at Home in the D.C. Community Solar Decathlon at Home in the D.C. Community Addthis A New Energy-Efficient Home in the D.C. Community 1 of 27 A New Energy-Efficient Home in the D.C. Community On December 4, 2012, the Empowerhouse team, along with partners and community members, completed the installation of a permanent, two-family home in Washington, D.C. The home was originally showcased as part of the U.S Department of Energy's Solar Decathlon 2011. Image: Sarah Gerrity Date taken: 2012-12-04 12:22 2 of 27 The house is located in the D.C. neighborhood of Deanwood, which is just 10 miles from the National Mall. By installing the house nearby, the team was able to minimize shipping costs, therefore reducing the house's carbon footprint. Image: Sarah Gerrity Date taken: 2012-12-04 09:00

418

Investigation of the semiconductor–oxide electrolyte interface in GaAs utilizing electrolyte electroreflectance  

Science Journals Connector (OSTI)

We have investigated the electrolyte electroreflectance (EER) spectra of N–GaAs in the vicinity of the E o transition (direct gap at k?=0). A pronounced interference phenomenon sensitive to the d c b i a s e l e c t r i c f i e l d has been observed which we identify with an exciton quenching effect within the semiconductor space–charge region (SCR). We have utilized this excitonic feature to interferometrically probe the dynamic and steady?state properties of the SCR during electrochemical anodization procedures. The same EER spectra also exhibit Franz–Keldysh oscillations the period of which is explicitly dependent on the a c e l e c t r i c f i e l d. Using these phenomena we have shown that the interfacial and oxide electric fields under steady?state conditions are just sufficient to continue growing the oxide in compensation for slow dissolution. If the dc bias voltage is suddenly reduced the SCR temporarily collapses due to transient effects which we attribute to very slow interface states in the oxide. These techniques are applicable to the study of the SCR in a variety of semiconductor–electrolyte systems as well as in the Schottky barrier configuration.

R. P. Silberstein; F. H. Pollak

1980-01-01T23:59:59.000Z

419

Sputtering of Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN by electrosprayed nanodroplets  

SciTech Connect

This article presents a characterization of the damage caused by energetic beams of electrosprayed nanodroplets striking the surfaces of single-crystal semiconductors including Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN. The sputtering yield (number of atoms ejected per projectile's molecule), sputtering rate, and surface roughness are measured as functions of the beam acceleration potential. The maximum values of the sputtering yields range between 1.9 and 2.2 for the technological important but difficult to etch SiC and GaN respectively, and 4.5 for Ge. The maximum sputtering rates for the non-optimized beam flux conditions used in our experiments vary between 409?nm/min for SiC and 2381?nm/min for GaSb. The maximum sputtering rate for GaN is 630?nm/min. Surface roughness increases modestly with acceleration voltage, staying within 2?nm and 20?nm for all beamlet acceleration potentials and materials except Si. At intermediate acceleration potentials, the surface of Si is formed by craters orders of magnitude larger than the projectiles, yielding surface roughness in excess of 60?nm. The effect of projectile dose is studied in the case of Si. This parameter is correlated with the formation of the large craters typical of Si, which suggests that the accumulation of damage following consecutive impacts plays an important role in the interaction between beamlet and target.

Borrajo-Pelaez, Rafael; Grustan-Gutierrez, Enric; Gamero-Castaño, Manuel, E-mail: mgameroc@uci.edu [Department of Mechanical and Aerospace Engineering, University of California, Irvine, California 92697 (United States)

2013-11-14T23:59:59.000Z

420

Energy savings from direct-DC in U.S. residential buildings  

NLE Websites -- All DOE Office Websites (Extended Search)

savings from direct-DC in U.S. residential buildings savings from direct-DC in U.S. residential buildings Title Energy savings from direct-DC in U.S. residential buildings Publication Type Journal Article Year of Publication 2013 Authors Vossos, Vagelis, Karina Garbesi, and Hongxia Shen Journal Energy and Buildings Volume Volume 68, Part A Pagination 223-231 Date Published 09/2013 Keywords Direct current (DC), energy conservation, Photovoltaics (PV), residential buildings Abstract An increasing number of energy-efficient appliances operate on direct current (DC) internally, offering the potential to use DC directly from renewable energy systems, thereby avoiding the energy losses inherent in converting power to alternating current (AC) and back. This paper investigates that potential for net-metered residences with on-site photovoltaics (PV) by modeling the net power draw of a 'direct-DC house' compared to that of a typical net-metered house with AC distribution, assuming identical DC-internal loads. The model comparisons were run for 14 cities in the United States, using hourly, simulated PV-system output and residential loads. The model tested the effects of climate and battery storage. A sensitivity analysis was conducted to determine how future changes in the efficiencies of power system components might affect potential energy savings. Based on this work, we estimate that net-metered PV residences could save 5% of their total electricity load for houses without storage and 14% for houses with storage. Direct-DC energy savings are sensitive to power system and appliance conversion efficiencies but are not significantly influenced by climate.

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Impact of quasi-dc currents on three-phase distribution transformer installations  

SciTech Connect

This report summarizes a series of tests designed to determine the response of quasi-dc currents on three-phase power distribution transformers for electric power systems. In general, if the dc injection is limited to the primary side of a step-down transformer, significant harmonic distortion is noted and an increase in the reactive power demand results. For dc injection on the secondary (load) side of the step-down transformer the harmonic content at the secondary side is quite high and saturation occurs with a relatively low level of dc injection; however, the reactive power demand is significantly lower. These tests produced no apparent damage to the transformers. Transformer damage is dependent on the duration of the dc excitation, the level of the excitation, and on thermal characteristics of the transfer. The transformer response time is found to be much shorter than seen in power transformer tests at lower dc injection levels. This shorter response time suggests that the response time is strongly dependent on the injected current levels, and that higher levels of dc injection for shorter durations could produce very high reactive power demands and harmonic distortion within a few tenths of a second. The added reactive power load could result in the blowing of fuses on the primary side of the transformer for even moderate dc injection levels, and neutral currents are quite large under even low-level dc injection. This smoking neutral'' results in high-level harmonic injection into equipment via the neutral and in possible equipment failure.

McConnell, B.W.; Barnes, P.R. (Oak Ridge National Lab., TN (United States)); Tesche, F.M. (Tesche (F.M.), Dallas, TX (United States)); Schafer, D.A. (Mission Research Corp., Albuquerque, NM (United States))

1992-06-01T23:59:59.000Z

422

Observation and cancellation of the dc Stark shift in strontium optical lattice clocks  

E-Print Network (OSTI)

We report on the observation of a dc Stark frequency shift at the $10^{-13}$ level by comparing two strontium optical lattice clocks. This frequency shift arises from the presence of electric charges trapped on dielectric surfaces placed under vacuum close to the atomic sample. We show that these charges can be eliminated by shining UV light on the dielectric surfaces, and characterize the residual dc Stark frequency shift on the clock transition at the $10^{-18}$ level by applying an external electric field. This study shows that the dc Stark shift can play an important role in the accuracy budget of lattice clocks, and should be duly taken into account.

Lodewyck, Jérôme; Lorini, Luca; Gurov, Mikhail; Lemonde, Pierre

2011-01-01T23:59:59.000Z

423

Application of direct pulsewidth modulation scheme to AC-DC converters: - a way to reduce ripple  

E-Print Network (OSTI)

and Problems . 2 Switching Transfer Function . 3 General Theory of PWM 4 Performance Measurement of PWM sc-dc Coverters 1 5 8 12 ALGORITHM OF DIRECT PULSEWIDTH MODULATION USED IN AC- DC COVERTER 14 SINGLE PHASE AC-DC PWM CONVERTERS . . 17 ac..., and ISPWM. 3. 1 Sinusoidal Pulsewidth Modulation (SPWM) SPWM is the most commonly used PWM technique. In SPWM as shown in Figure 1, the pulse widths are generated by comparing a carrier signal which is made of CARRIER REFERENCE 0 0 I . 0 1. 5 20 2. 5...

Zhang, Yuemin

2012-06-07T23:59:59.000Z

424

The smoothing transformer, a new concept in dc side harmonic reduction of HVdc schemes  

SciTech Connect

Direct connection schemes have been a subject of recent investigation, offering operational flexibility and substantial reductions in ac components. In these schemes the use of active dc filters has been suggested to replace the conventional tuned passive filter design. This paper presents the smoothing transformer as a new means for reducing dc harmonics at characteristic and non-characteristic frequencies using only passive components. A realistic smoothing transformer design is examined using the New Zealand HVdc system operating in the direct connection mode. The steady-state and transient performance of the smoothing transformer design is compared with that of the existing dc smoothing reactor and filter bank.

Enright, W.; Arrillaga, J.; Wood, A.R.; Hidalgo, F.P.

1996-10-01T23:59:59.000Z

425

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

426

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

427

Exciton recombination dynamics in InxGa1-xAs/GaAs quantum wells  

Science Journals Connector (OSTI)

Low-temperature decay times ?PL are reported for a series of InxGa1-xAs/GaAs quantum wells. These show a nearly linear increase with increasing thickness (4?Lz?10 nm, x=0.15) but recombination in the widest well (12 nm) is dominated by nonradiative effects. The decay time increases almost linearly with temperature up to 50 K, as expected for free excitons. An increase in ?PL with increasing In composition (0.05?x?0.25, Lz=8 nm) is also observed. Wells with different In compositions exhibit a similar temperature behavior and there is a weak influence of strain on the decay time. Additional peaks in the photoluminescence spectra occur to the low-energy side of the free-exciton peaks. These features, which exhibit longer decay times, are attributed to excitons localized in In-rich islands arising from indium segregation.

Haiping Yu; Christine Roberts; Ray Murray

1995-07-15T23:59:59.000Z

428

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes  

SciTech Connect

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07T23:59:59.000Z

429

Photovoltaic properties of GaAs:Be nanowire arrays  

SciTech Connect

Arrays of GaAs:Be nanowires are synthesized by molecular beam epitaxy on GaAs(111)B substrates. Prototypes of photovoltaic converters in which the grown nanowire arrays are used as active layers are produced by means of successive photolithography, etching, and metallization processes. Studying the photovoltaic properties of the fabricated structures using a solar radiation simulator demonstrates that the solarenergy conversion efficiency is about 0.1%. The value of the efficiency recalculated with the area occupied by the p-type nanowires on the surface of the n-type GaAs substrate taken into account amounts to 1.1%.

Bouravleuv, A. D.; Beznasyuk, D. V.; Gilstein, E. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Tchernycheva, M.; Luna Bugallo, A. De; Rigutti, L. [University Paris Sud 11, Institut d'Electronique Fondamentale UMR CNRS 8622 (France); Yu, L. [CNRS, Laboratoire de Physique des Interfaces et des Couches Minces (LPICM), Ecole Polytechnique (France); Proskuryakov, Yu. [University of Liverpool, Stephenson Institute for Renewable Energy (United Kingdom); Shtrom, I. V.; Timofeeva, M. A. [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation); Samsonenko, Yu. B.; Khrebtov, A. I.; Cirlin, G. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-06-15T23:59:59.000Z

430

Photocurrent Spectroscopy of Single Wurtzite GaAs Nanowires  

SciTech Connect

Photocurrent of single wurtzite GaAs nanowires grown by Au-assisted molecular beam epitaxy is measured at room and low temperature (10 K). At room temperature a high photo-response with more than two orders of magnitude increase of current is observed. The wavelength dependence of the photocurrent shows a sharp change near the zinc blende GaAs band gap. The absence of the free exciton peak in the low temperature photocurrent spectrum, and problems related to determining the exact position of the energy bandgap of wurtzite GaAs from the observed data are discussed.

Kim, D. C.; Ahtapodov, L.; Boe, A. B.; Moses, A. F.; Dheeraj, D. L.; Fimland, B. O.; Weman, H. [Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway); Choi, J. W.; Ji, H.; Kim, G. T. [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

2011-12-23T23:59:59.000Z

431

Effects of Ga ion-beam irradiation on monolayer graphene  

SciTech Connect

The effects of Ga ion on the single layer graphene (SLG) have been studied by Raman spectroscopy (RS), SEM, and field-effect characterization. Under vacuum conditions, Ga ion-irradiation can induce disorders and cause red shift of 2D band of RS, rather than lattice damage in high quality SLG. The compressive strain induced by Ga ion decreases the crystalline size in SLG, which is responsible for the variation of Raman scattering and electrical properties. Nonlinear out-put characteristic and resistance increased are also found in the I-V measurement. The results have important implications during CVD graphene characterization and related device fabrication.

Wang, Quan; Mao, Wei; Zhang, Yanmin; Shao, Ying; Ren, Naifei [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China)] [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Ge, Daohan [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China) [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2013-08-12T23:59:59.000Z

432

Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs  

Science Journals Connector (OSTI)

Electrolyte electroreflectance (EER) experiments were performed on In 0.22 Ga 0.78 As/GaAs single quantum wells grown by the conventional molecular-beam-epitaxy (MBE) shutter operation and also by modified MBE shutter operation intended to form more compositionally abrupt normal and inverted interfaces. The latter included controlled thermal desorption of the surface segregated In at the InGaAs layer surface (flash off) and the deposition of In at the InGaAs/GaAs interface to eliminate compositional broadening (predeposition). The fundamental energy gap and subband transitions were determined experimentally and compared with an accurate calculation of the potential well problem including strain. These results confirmed the segregation of In atoms near the interface. The segregation was maximum in the conventional (normal) MBE sample and least with the modified growth incorporating predeposition and flash off as expected. The segregated atoms are observed to act as dopants and form junctions near the InGaAs/GaAs interface. This study shows that EER can be used as an effective tool for studying the segregation process in MBE growth.

K. Chattopadhyay; J. Aubel; S. Sundaram; J. E. Ehret; R. Kaspi; Keith R. Evans

1997-01-01T23:59:59.000Z

433

BERAC Meeting, February 16-17, 2012, Washington, DC| U.S. DOE Office of  

Office of Science (SC) Website

February 16-17, 2012, Washington, DC February 16-17, 2012, Washington, DC Biological and Environmental Research Advisory Committee (BERAC) BERAC Home Meetings BERAC Minutes BERAC Minutes Archive Members Charges/Reports Charter .pdf file (40KB) BER Committees of Visitors BER Home Meetings BERAC Meeting, February 16-17, 2012, Washington, DC Print Text Size: A A A RSS Feeds FeedbackShare Page BERAC Meeting February 16-17, 2012 Washington, DC Agenda .pdf file (25KB) Presentations William Brinkman, Comments from the Director, Office of Science .pdf file (24.4MB) Sharlene Weatherwax, State of BER Report .pdf file (4.3MB) Eddy Rubin, Joint Genome Institute Update .ppt file (18.0MB) Allison Campbell, Environmental Molecular Sciences Laboratory (EMSL) Update .pdf file (17.8MB) Adam Arkin, Knowledgebase Discussion .pdf file (8.9MB)

434

BERAC Meeting April 30 - May 1, 2003 Washington DC | U.S. DOE Office of  

Office of Science (SC) Website

30 - May 1, 2003 Washington DC 30 - May 1, 2003 Washington DC Biological and Environmental Research Advisory Committee (BERAC) BERAC Home Meetings BERAC Minutes BERAC Minutes Archive Members Charges/Reports Charter .pdf file (40KB) BER Committees of Visitors BER Home Meetings BERAC Meeting April 30 - May 1, 2003 Washington DC Print Text Size: A A A RSS Feeds FeedbackShare Page BERAC Meeting April 30 - May 1, 2003 Washington, DC Agenda .pdf file (8KB) Presentations Teresa Fryberger .ppt file (5.9MB), Director, Environmental Remediation Sciences Division, Division and Draft Strategic Plan Overview Anna Palmisano .ppt file (16.6MB), Natural and Accelerated Bioremediation Research Program Update Roland Hirsch .ppt file (740KB), Environmental Management Science Program Bill Rogers .ppt file (10.6MB), Environmental Molecular Sciences

435

BERAC Meeting April 25-26, 2002 Washington, DC | U.S. DOE Office of Science  

Office of Science (SC) Website

25-26, 2002 Washington, DC 25-26, 2002 Washington, DC Biological and Environmental Research Advisory Committee (BERAC) BERAC Home Meetings BERAC Minutes BERAC Minutes Archive Members Charges/Reports Charter .pdf file (40KB) BER Committees of Visitors BER Home Meetings BERAC Meeting April 25-26, 2002 Washington, DC Print Text Size: A A A RSS Feeds FeedbackShare Page BERAC Meeting April 25-26, 2002 Washington DC Agenda .pdf file (6KB) Available Presentations James Decker .ppt file (22.1MB), Principal Deputy Director, Office of Science Rod Brown .ppt file (70KB), Deputy Undersecretary for Research, Education and Economics, USDA Ari Patrinos .ppt file (64KB), Associate Director for Biological & Environmental Research Dick Swaja .ppt file (74KB), National Institute of Biomedical Imaging and

436

BERAC Meeting December 3-4, 2002 Washington, DC | U.S. DOE Office of  

Office of Science (SC) Website

3-4, 2002 Washington, DC 3-4, 2002 Washington, DC Biological and Environmental Research Advisory Committee (BERAC) BERAC Home Meetings BERAC Minutes BERAC Minutes Archive Members Charges/Reports Charter .pdf file (40KB) BER Committees of Visitors BER Home Meetings BERAC Meeting December 3-4, 2002 Washington, DC Print Text Size: A A A RSS Feeds FeedbackShare Page BERAC Meeting December 3-4, 2002 Washington, DC Agenda .pdf file (6KB) Presentations Genomes to Life Facilities Marvin Frazier, DOE .ppt file (5.0MB), User Facilities for 21st Century Systems Biology Eric Ackerman, PNNL .ppt file (1.9MB), Facility I: Production and Characterization of Proteins Michelle Buchanan, ORNL .ppt file (4.3MB), Facility II: Whole Proteome Analysis Lee Makowski, ANL .ppt file (8.5MB), Characterization and Imaging of

437

BERAC Meeting July 10-11, 2006 Washington, DC | U.S. DOE Office of Science  

Office of Science (SC) Website

July 10-11, 2006 Washington, DC July 10-11, 2006 Washington, DC Biological and Environmental Research Advisory Committee (BERAC) BERAC Home Meetings BERAC Minutes BERAC Minutes Archive Members Charges/Reports Charter .pdf file (40KB) BER Committees of Visitors BER Home Meetings BERAC Meeting July 10-11, 2006 Washington, DC Print Text Size: A A A RSS Feeds FeedbackShare Page BERAC Meeting July 10-11, 2006 Washington, DC Agenda .pdf file (14KB) Presentations James Tiedje .ppt file (123KB), Discussion of Final Report of the BERAC Review of the JGI Jim Bristow .ppt file (2.8MB), JGI, Progress in addressing BERAC Recommendations Jeff Gaffney .pdf file (6.6MB), ANL, Reconfigured Atmospheric Science Program and the 2006 Mexico City Campaign David Thomassen .ppt file (119KB), State of BER Mike Kuperberg .ppt file (9.8MB), Introduction to EMSL

438

BERAC Meeting November 29-30, 2007 Washington, DC | U.S. DOE Office of  

Office of Science (SC) Website

November 29-30, 2007 Washington, DC November 29-30, 2007 Washington, DC Biological and Environmental Research Advisory Committee (BERAC) BERAC Home Meetings BERAC Minutes BERAC Minutes Archive Members Charges/Reports Charter .pdf file (40KB) BER Committees of Visitors BER Home Meetings BERAC Meeting November 29-30, 2007 Washington, DC Print Text Size: A A A RSS Feeds FeedbackShare Page BERAC Meeting November 29-30, 2007 Washington, DC Agenda .pdf file (9KB) Presentations BER Updates on BERAC Reports Jeff Amthor .ppt file (11.5MB), Free Air Carbon Dioxide Enrichment (FACE) Report Bob Vallario .ppt file (749KB), Integrated Assessment Program Report David Thomassen .ppt file (651KB), Climate Change Committee of Visitors Report Update on BERAC Charges Jim Adelstein .ppt file (785KB), Low Dose Program Review

439

News From the D.C. Office: Seminars Explore Energy Policies & Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

3 Aerial view of Washington D.C. 3 Aerial view of Washington D.C. News From the D.C. Office Seminars Explore Energy Policies & Technologies As part of our effort to communicate with customers and colleagues in the Washington area, the LBNL-D.C. office sponsors a series of breakfast seminars on research and policy topics of current interest. We've held six seminars this spring, each attended by 15 to 25 invited guests from the Department of Energy, the Environmental Protection Agency, the Agency for International Development, nongovernmental organizations, Congressional committee staff, and D.C. staff of other national laboratories. On March 2, Jim McMahon of LBNL's Energy Analysis Program described LBNL's important contribution to national energy-efficiency standards for appliances. LBNL has provided analytical support to DOE for more than 15

440

BERAC Meeting November 13-14, 2003 Washington, DC | U.S. DOE Office of  

Office of Science (SC) Website

13-14, 2003 Washington, DC 13-14, 2003 Washington, DC Biological and Environmental Research Advisory Committee (BERAC) BERAC Home Meetings BERAC Minutes BERAC Minutes Archive Members Charges/Reports Charter .pdf file (40KB) BER Committees of Visitors BER Home Meetings BERAC Meeting November 13-14, 2003 Washington, DC Print Text Size: A A A RSS Feeds FeedbackShare Page BERAC Meeting November 13-14, 2003 Washington, DC Agenda .pdf file (12KB) Presentations Mark Humayun .ppt file (8.4MB), The Artificial Retina Project Chris Stubbs .ppt file (10.7MB), Computational Aspects of Medical Imaging Pat Dehmer .ppt file (34.2MB), Nanoscience and Hydrogen Initiatives Jim Mahoney .ppt file (761KB), The U.S. Climate Change Science Program: Strategic Planning to Implementation David Conover .ppt file (573KB), U.S. Climate Change Technology Program

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441

BERAC Meeting April 20-21, 2005 Washington DC | U.S. DOE Office of Science  

Office of Science (SC) Website

April 20-21, 2005 Washington DC April 20-21, 2005 Washington DC Biological and Environmental Research Advisory Committee (BERAC) BERAC Home Meetings BERAC Minutes BERAC Minutes Archive Members Charges/Reports Charter .pdf file (40KB) BER Committees of Visitors BER Home Meetings BERAC Meeting April 20-21, 2005 Washington DC Print Text Size: A A A RSS Feeds FeedbackShare Page BERAC Meeting April 20-21, 2005 Washington DC Agenda .pdf file (15KB) Presentations Ray Orbach .ppt file (134KB), Advancing Energy, Economic and National Security... Dave Bader .ppt file (36KB), Subcommittee Report on the Need for Enhanced Research on Cloud Parameterization Methods... Peter Lunn .ppt file (215KB), Status Report on Restructuring of Aerosol Research Program Jerry Elwood .ppt file (552KB), New Charge to Review Terrestrial Carbon

442

BERAC Meeting April 29-30, 2004 Washington DC | U.S. DOE Office of Science  

Office of Science (SC) Website

29-30, 2004 Washington DC 29-30, 2004 Washington DC Biological and Environmental Research Advisory Committee (BERAC) BERAC Home Meetings BERAC Minutes BERAC Minutes Archive Members Charges/Reports Charter .pdf file (40KB) BER Committees of Visitors BER Home Meetings BERAC Meeting April 29-30, 2004 Washington DC Print Text Size: A A A RSS Feeds FeedbackShare Page BERAC Meeting April 29-30, 2004 Washington, DC Agenda .pdf file (15KB) Presentations Ray Orbach .ppt file (1.5MB) Ari Patrinos .ppt file (72.2MB), The State of BER Jill Banfield .ppt file (20.5MB), Structure, Reactivity, and Behavior of Nanoparticles in the Environment Steve Larson .ppt file (420KB), Radiopharmaceutical Subcommittee Report Joel Parriott/Bill Valdez .ppt file (710KB), Program Plans and Program Assessment Rating Tool (PART) Roadmaps

443

BERAC Meeting December 5-6, 2005 Washington, DC| U.S. DOE Office of Science  

Office of Science (SC) Website

5-6, 2005 Washington, DC 5-6, 2005 Washington, DC Biological and Environmental Research Advisory Committee (BERAC) BERAC Home Meetings BERAC Minutes BERAC Minutes Archive Members Charges/Reports Charter .pdf file (40KB) BER Committees of Visitors BER Home Meetings BERAC Meeting December 5-6, 2005 Washington, DC Print Text Size: A A A RSS Feeds FeedbackShare Page BERAC Meeting December 5-6, 2005 Washington, DC Agenda .pdf file (14KB) Presentations Mike Kuperberg .ppt file (68KB) and Andy Felmy .ppt file (9.8MB), EMSL Update: Reviews, Action Plan & Progress Ari Patrinos .ppt file (80KB), State of BER Warren Washington .ppt file (152KB), Discussion of the TCCRP subcommittee Report George Sgouros .pdf file (42KB), SNM, Public Comment Dan Hitchcock .ppt file (848KB), Dinner Talk, High Performance Computing

444

BERAC Meeting March 9-11, 2011 Washington, DC | U.S. DOE Office of Science  

Office of Science (SC) Website

March 9-11, 2011 Washington, DC March 9-11, 2011 Washington, DC Biological and Environmental Research Advisory Committee (BERAC) BERAC Home Meetings BERAC Minutes BERAC Minutes Archive Members Charges/Reports Charter .pdf file (40KB) BER Committees of Visitors BER Home Meetings BERAC Meeting March 9-11, 2011 Washington, DC Print Text Size: A A A RSS Feeds FeedbackShare Page BERAC Meeting March 9-10, 2011 Washington, DC Agenda .pdf file (7KB) Presentations Warren Washington .pptx file (29.0MB), The Present and Future of Climate Modeling William Brinkman .pptx file (25.3MB), Office of Science Report Sharlene Weatherwax .pdf file (446KB), State of BER Report Paul Bryan .pptx file (2.4MB), Activities in DOE's Office of Biomass Programs Gary Geernaert .pptx file (8.3MB), Climate and Environmental Sciences

445

103 Teams to Head to DOE's National Science Bowl in Washington, D.C. |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3 Teams to Head to DOE's National Science Bowl in Washington, 3 Teams to Head to DOE's National Science Bowl in Washington, D.C. 103 Teams to Head to DOE's National Science Bowl in Washington, D.C. April 23, 2009 - 12:00am Addthis WASHINGTON, DC- Students from 67 high school teams and 36 middle school teams from across the nation will compete next weekend for championship titles in the U.S. Department of Energy's (DOE) National Science Bowl in Washington D.C. The National Science Bowl is the nation's largest academic competition of its kind and the only one sponsored by a federal agency. The National Finals will be held from May 2 through May 4. Each of the participating teams emerged from a regional competition to earn an all-expense-paid trip to the event. The participating teams represent 42 states, the District of Columbia, the U.S. Virgin Islands and Puerto

446

EETD Researchers Contribute to Efficient DC-Power Data Center at UC San  

NLE Websites -- All DOE Office Websites (Extended Search)

EETD Researchers Contribute to Efficient DC-Power Data Center at UC San EETD Researchers Contribute to Efficient DC-Power Data Center at UC San Diego Interior of the GreenLight Instrument October 2010 The California Institute for Telecommunications and Information Technology (Calit2) at UC San Diego is operating a set of servers in a campus data center on 380-volt DC (direct current) power. The new modular data center on campus has sensors and other instruments to measure the energy efficiency of information and communication technologies, the infrastructure that supports it - and to help researchers build greener IT systems and software. The direct current technology in the center eliminates the need for multiple conversions back and forth between AC to DC power, which are used in AC-based data centers that are in common use today. This technology

447

News From the D.C. Office: New Work With Motor Systems  

NLE Websites -- All DOE Office Websites (Extended Search)

3 Aerial view of Washington D.C. 3 Aerial view of Washington D.C. News From the D.C. Office New Work With Motor Systems The Energy Analyis Program has recently started a project for the DOE Office of Industrial Technologies Motor Challenge Program. This project, to be carried out in the Washington D.C. office, extends the office's work to an exciting new area of electric motor system efficiency. Motor systems consume about 70 percent of the electric energy used in the U.S. industrial sector. Emphasis on motor efficiency in recent years has led to passage of efficiency standards, to become effective in 1997, for most common types of motors. This is extremely important because the cost of energy consumed by a motor during its useful life typically far exceeds its acquisition cost. Frequently, significant system-level opportunities

448

GRR Update Meeting scheduled for 9/13 in D.C. | OpenEI Community  

Open Energy Info (EERE)

GRR Update Meeting scheduled for 9/13 in D.C. GRR Update Meeting scheduled for 9/13 in D.C. Home > Groups > Geothermal Regulatory Roadmap Kyoung's picture Submitted by Kyoung(155) Contributor 6 September, 2012 - 08:51 D.C. GRR meeting update The next Geothermal Regulatory Roadmap update meeting will be held in Washington, D.C. on Thursday, September 13 from 2-4 p.m. (ET). We will be reviewing the progress to date, giving a demonstration on accessing the roadmap on OpenEI, and presenting preliminary analysis of the roadmapping effort. If you are interesting in attending this workshop, please e-mail Stacee Foster to receive an official invitation. Groups: Geothermal Regulatory Roadmap Login to post comments Kyoung's blog Latest blog posts Kyoung Geothermal NEPA Workshop at GRC Posted: 14 Oct 2013 - 20:19 by Kyoung

449

News From the D.C. Office: Greenhouse Gas Mitigation Workshops  

NLE Websites -- All DOE Office Websites (Extended Search)

Aerial view of Washington D.C. Aerial view of Washington D.C. News From the D.C. Office Greenhouse Gas Mitigation Workshops LBNL brought technical training to four continents this summer with a series of regional greenhouse gas mitigation workshops. As part of LBNL's continued work on the U.S. Country Studies Program (USCSP), staff members of the Energy Analysis Program from Washington, D.C. and Berkeley worked together to put on workshops in Warsaw, Poland; Cancun, Mexico; Arusha, Tanzania; and Seoul, Korea. LBNL began working with USCSP more than a year and a half ago, when it was awarded the contract to provide mitigation assistance to some 35 countries. The Program grew out of the U.S.'s commitment to help developing and transitional countries address climate-change issues- specifically to

450

News From the D.C. Office: Presidential Mission on Energy Investment in  

NLE Websites -- All DOE Office Websites (Extended Search)

3 Aerial view of Washington D.C. 3 Aerial view of Washington D.C. News From the D.C. Office Presidential Mission on Energy Investment in Pakistan Secretary of Energy Hazel O'Leary led a presidential mission on energy investment in the Islamic Republic of Pakistan September 19-25, 1994. Stephen Wiel, who heads the Energy and Environment Division's Washington D.C. Project Office, participated in the mission. It was the first visit to Pakistan by a U.S. cabinet member for a nonmilitary purpose: to build economic bridges and an enhanced business relationship between the two countries. Members of the mission were assigned to work on oil and natural gas, coal, rural development and renewables, energy efficiency and environment, and electricity (including generation, transmission, and distribution). Stephen

451

OLENDER REPORTING, INC. 1100 Connecticut Ave., NW, Suite 810, Washington, DC  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

100 Connecticut Ave., NW, Suite 810, Washington, DC 100 Connecticut Ave., NW, Suite 810, Washington, DC 20036 Washington: (202) 898-1108 / Baltimore: (410) 752-3376 Toll Free: (888) 445-3376 1 Electricity Advisory Committee Meeting 8:33 a.m. through 2:49 p.m. October 29, 2010 OLENDER REPORTING, INC. 1100 Connecticut Ave., NW, Suite 810, Washington, DC 20036 Washington: (202) 898-1108 / Baltimore: (410) 752-3376 Toll Free: (888) 445-3376 2 National Rural Electric Cooperative Conference Center 4301 Wilson Boulevard Arlington, VA 22203 OLENDER REPORTING, INC. 1100 Connecticut Ave., NW, Suite 810, Washington, DC 20036 Washington: (202) 898-1108 / Baltimore: (410) 752-3376 Toll Free: (888) 445-3376 3 ELECTRICITY ADVISORY MEMBERS PRESENT: Richard Cowart

452

Dean's Report from DC (Nov 2011) 1: Federal Science Funding PerspecAve  

E-Print Network (OSTI)

Dean's Report from DC (Nov 2011) 1: Federal Science Funding Perspec (AdministraAon's) FY12 PrioriAes Ã? Moving toward a clean energy future to reduce dependence on energy imports while curbing greenhouse gas emissions Ã? Understanding

Wang, Yuqing

453

DC Pro Software Tool Suite, Data Center Fact Sheet, Industrial Technologies Program  

SciTech Connect

This fact sheet describes how DOE's Data Center Energy Profiler (DC Pro) Software Tool Suite and other resources can help U.S. companies identify ways to improve the efficiency of their data centers.

Not Available

2009-04-01T23:59:59.000Z

454

Design of Brushless DC Motor Control System Based on Back Electric Motive Force (EMF)  

Science Journals Connector (OSTI)

Brushless dc motor uses electronic commutation technology instead of mechanical commutation brush for electric motor with new types of mechanical and electrical integration. It has the ac motor simple structure, ...

Ran Dong; Hongqi Wang; Weiwei Xue

2012-01-01T23:59:59.000Z

455

Measured Savings of DC to AC Drive Retrofit in Plastic Extrusion  

E-Print Network (OSTI)

This paper presents the potential electrical energy efficiency improvements for utilizing alternating current (AC) motors controlled by variable frequency drives (VFD) in place of direct current (DC) motors to drive plastic extrusion machines. A...

Sfeir, R. A.

2008-01-01T23:59:59.000Z

456

Vehicle Technologies Office Merit Review 2014: High Performance DC Bus Film Capacitor  

Energy.gov (U.S. Department of Energy (DOE))

Presentation given by GE Global Research at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about high performance DC bus...

457

Multilevel-Dc-Bus Inverter For Providing Sinusoidal And Pwm Electrical Machine Voltages  

DOE Patents (OSTI)

A circuit for controlling an ac machine comprises a full bridge network of commutation switches which are connected to supply current for a corresponding voltage phase to the stator windings, a plurality of diodes, each in parallel connection to a respective one of the commutation switches, a plurality of dc source connections providing a multi-level dc bus for the full bridge network of commutation switches to produce sinusoidal voltages or PWM signals, and a controller connected for control of said dc source connections and said full bridge network of commutation switches to output substantially sinusoidal voltages to the stator windings. With the invention, the number of semiconductor switches is reduced to m+3 for a multi-level dc bus having m levels. A method of machine control is also disclosed.

Su, Gui-Jia [Knoxville, TN

2005-11-29T23:59:59.000Z

458

Strontium Titanate DC Electric Field Switchable and Tunable Bulk Acoustic Wave Solidly Mounted Resonator  

E-Print Network (OSTI)

Strontium Titanate DC Electric Field Switchable and Tunable Bulk Acoustic Wave Solidly Mounted Abstract - A voltage switchable/tunable strontium titanate solidly mounted BAW resonator was implemented films, piezoelectric resonators. I. INTRODUCTION Strontium titanate (STO) and barium strontium titanate

York, Robert A.

459

Area Efficient D/A Converters For Accurate DC Operation Brandon Royce Greenley  

E-Print Network (OSTI)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 6.2 Mismatch Modeling For Area Optimization . . . . . . . . . . . . . . . . . . . . . . . 51 6Area Efficient D/A Converters For Accurate DC Operation by Brandon Royce Greenley A THESIS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 5.1 Measurement Setup

Moon, Un-Ku

460

U.S. Department of Energy - Washington, DC | Department of Energy  

Energy Savers (EERE)

Washington, DC. A photovoltaic (PV) system was installed as part of the DOE's support of alternative energy and the Federal initiatives to lower energy usage. The 3 kW AC PV...

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

DC Connected Hybrid Offshore-Wind and Tidal Turbine Generation System  

Science Journals Connector (OSTI)

“Hybrid Offshore-wind and Tidal Turbine” (HOTT) generation system (Rahman and ... interconnecting method for a DC side cluster of wind and tidal turbine generators system are proposed. This method can be achieved...

Mohammad Lutfur Rahman; Yasuyuki Shirai

2010-01-01T23:59:59.000Z

462

N–O mix optimisation in low energy dense DC glow surface Ti conditioning  

Science Journals Connector (OSTI)

Samples of pure titanium have been treated by means a plasma immersed ion implantation (PIII) process in a DC glow discharge in pure oxygen and in different nitrogen-oxygen mixtures. In contrast with conventio...

E. E. Granda-Gutiérrez; R. López-Callejas…

2009-08-01T23:59:59.000Z

463

Development and evaluation of an implantable chronic DC stimulation and measurement probe for nerve regeneration studies  

E-Print Network (OSTI)

DEVELOPMENT AND EVALUATION OF AN IMPLANTABLE CHRONIC DC STIMULATION AND MEASUREMENT PROBE FOR NERVE REGENERATION STUDIES A Thesis by DOUGLAS BRYAN MACHA Submitted to the Office of Graduate Studies of Texas A&M University in partial... fulfillment of the requirements for the degree of MASTER OF SCIENCE August 1995 Major Subject: Bioengineering DEVELOPMENT AND EVALUATION OF AN IMPLANTABLE CHRONIC DC STIMULATION AND MEASUREMENT PROBE FOR NERVE REGENERATION STUDIES A Thesis by DOUGLAS...

Macha, Douglas Bryan

2012-06-07T23:59:59.000Z

464

Nonlinear modal interaction in HVDC/AC power systems with dc power modulation  

SciTech Connect

In this paper investigation of nonlinear modal interaction using the normal form of vector fields technique is extended to HVDC/AC power systems with dc power modulation. The ac-dc interface equations are solved to form a state space model with second order approximation. Using the normal form technique, the system`s nonlinear dynamic characteristics are obtained. The proposed approach is applied to a 4-generator HVDC/AC test power system, and compare with the time domain solution.

Ni, Y.X. [Tsinghua Univ., Beijing (China)] [Tsinghua Univ., Beijing (China); Vittal, V.; Kliemann, W.; Fouad, A.A. [Iowa State Univ., Ames, IA (United States)] [Iowa State Univ., Ames, IA (United States)

1996-11-01T23:59:59.000Z

465

The effect of CdS QDs structure on the InGaP/GaAs/Ge triple junction solar cell efficiency  

Science Journals Connector (OSTI)

This work describes optical and electrical characteristics of InGaP/GaAs/Ge triple-junction (T-J) solar cells with CdS quantum dots (QDs) ... quantum dot effectively enhance the overall power conversion efficiency

Chen-Chen Chung; Binh Tinh Tran; Hau-Vei Han; Yen-Teng Ho…

2014-03-01T23:59:59.000Z

466

Improvement of orange ii photobleaching by moderate Ga3+ doping of titania and detrimental effect of structural disorder on Ga overloading  

Science Journals Connector (OSTI)

Highly photoactive Ga3+-doped anatase modification of titania was prepared by homogeneous hydrolysis of aqueous solutions mixture of titanium oxo-sulphate TiOSO4 and gallium(III) nitrate with urea. Incorporation of Ga3+ ...

Václav Štengl, Jilí Henych, Michaela Slušná, Tomáš Matys Grygar, Jana Velická, Martin Kormunda

2014-01-01T23:59:59.000Z

467

Kinetics of indirect photoluminescence in GaAs/AlxGa1?x As double quantum wells in a random potential with a large amplitude  

Science Journals Connector (OSTI)

The kinetics of indirect photoluminescence of GaAs/AlxGa1?x As double quantum wells, characterized by a random potential with a large amplitude (the linewidth of the indirect photoluminescence is ...

L. V. Butov; A. V. Mintsev; A. I. Filin…

1999-05-01T23:59:59.000Z

468

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices  

SciTech Connect

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy); Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio [University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

2014-02-21T23:59:59.000Z

469

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells  

SciTech Connect

GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

2013-05-15T23:59:59.000Z

470

Edison Revisited: Should we use DC circuits for lighting in commercial buildings?  

Science Journals Connector (OSTI)

We examine the economic feasibility of using dedicated DC circuits to operate lighting in commercial buildings. We compare light-emitting diodes (LEDs) and fluorescents that are powered by either a central DC power supply or traditional AC grid electricity, with and without solar photovoltaics (PV) and battery back-up. Using DOE performance targets for \\{LEDs\\} and solar PV, we find that by 2012 \\{LEDs\\} have the lowest levelized annualized cost (LAC). If a DC voltage standard were developed, so that each LED fixture's driver could be eliminated, \\{LACs\\} could decrease, on average, by 5% compared to AC \\{LEDs\\} with a driver in each fixture. DC circuits in grid-connected PV-powered LED lighting systems can lower the total unsubsidized capital costs by 4–21% and \\{LACs\\} by 2–21% compared to AC grid-connected PV LEDs. Grid-connected PV \\{LEDs\\} may match the LAC of grid-powered fluorescents by 2013. This outcome depends more on manufacturers' ability to produce \\{LEDs\\} that follow DOE's lamp production cost and efficacy targets, than on reducing power electronics costs for DC building circuits and voltage standardization. Further work is needed to better understand potential safety risks with DC distribution and to remove design, installation, permitting, and regulatory barriers.

Brinda A. Thomas; Inês L. Azevedo; Granger Morgan

2012-01-01T23:59:59.000Z

471

AC Loss of Ripple Current in Superconducting DC Power Transmission Cable  

Science Journals Connector (OSTI)

Abstract As a method of largely reducing the transmission loss in the electric power grid, superconducting direct current (DC) power transmission cable has been investigated. Using superconducting DC power transmission cables, large amounts of current and energy can be transferred compared to conventional copper cables. In this case, an alternating current (AC) is converted to DC and superposed AC which is known as ripple current, and the energy loss by the ripple current is generated. Therefore it is desired to estimate the energy loss density for the case of DC current and superposed AC current for a design of DC transmission cable system. In this study, the hysteresis loss for DC current of 2 kA rectified from 60 Hz alternating current is calculated using the Bean model, and coupling loss was also estimated. The diameter of the cable was 40 mm. The ripple currents generated by multi-pulse rectifiers, 6-pulse, 12-pulse, and 24-pulse were considered. It is found that the total AC loss including the hysteresis loss and the coupling loss is considerably smaller than the supposed heat loss of 0.5 W/m which is obtained with a newly developed cable.

K. Yoshitomi; E.S. Otabe; V.S. Vyatkin; M. Kiuchi; T. Matsushita; M. Hamabe; S. Yamaguchi; R. Inada

2014-01-01T23:59:59.000Z

472

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy  

Science Journals Connector (OSTI)

Time-resolved photoluminescence(TRPL) and positron annihilation measurements as well as Al0.23Ga0.77N/GaN heterostructuregrowth by metalorganic vapor phase epitaxy were carried out on very low defect density polar c-plane and nonpolar m-plane freestanding GaN (FS-GaN) substrates grown by hydride vapor phase epitaxy. Room-temperature photoluminescence(PL) lifetime for the near-band-edge (NBE) excitonic emission of the FS-GaN substrates increases with increasing positron diffusion length (L +); i.e. decreasing gross concentration of charged and neutral point defects and complexes. The best undoped c-plane FS-GaN exhibits record-long L + being 116?nm. The fast component of the PL lifetime for its NBE emission increases with temperature rise up to 100?K and levels off at approximately 1.1?ns. The result implies a saturation in thermal activation of nonradiative recombination centers. The surface and interface roughnesses for a Si-doped Al0.23Ga0.77N/GaN/Al0.18Ga0.82N/GaN heterostructure are improved by the use of FS-GaN substrates in comparison with the structure fabricated on a standard GaN template. The emission signals related to the recombination of a two-dimensional electron gas and excited holes are recognized for an Al0.23Ga0.77N/GaN single heterostructuregrown on the c-plane FS-GaN substrate.

S. F. Chichibu; K. Hazu; Y. Ishikawa; M. Tashiro; H. Namita; S. Nagao; K. Fujito; A. Uedono

2012-01-01T23:59:59.000Z

473

Polarization charges and polarization-induced barriers in AlxGa1xNGaN and InyGa1yNGaN heterostructures  

E-Print Network (OSTI)

N�GaN heterostructures L. Jia,a) E. T. Yu, D. Keogh, and P. M. Asbeck Department of Electrical and Computer EngineeringGa1 yN surrounded by n-GaN, capacitance­ voltage profiling studies combined with elementary will most likely require further improvements in p-type GaN conduc- tivity and fabrication of low-resistance

Yu, Edward T.

474

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta, GA Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA October 7, 2013 - 3:16pm Addthis Energy on My Mind / FUPWG / Atlanta, GA / May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta, Georgia Tuesday, May 2, 2006 5:00 - 6:30 Steering Committee meeting in the Danube Tigris Room 6:30 until... Networking dinner at the Marriott Wednesday, May 3, 2006 7:45 am Registration/Continental Breakfast 8:30 - 8:45 Welcome from Suzanne Sitherwood, SVP, Southern Operations, President, Atlanta Gas Light, Chattanooga Gas & Florida City Gas 8:45 - 9:00 FEMP Southeast Regional Office Welcome Traci Leath, FEMP 9:00 - 9:45 Washington Update David McAndrew, FEMP 9:45 - 10:15 Break - Networking 10:15 - 11:20 Navy Technical Program Update Paul Kistler, U.S. Navy

475

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780...

476

Lattice vibrations of pure and doped GaSe  

SciTech Connect

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

477

GaAs solar cells close to the thermodynamic limit  

Science Journals Connector (OSTI)

The efficiency of GaAs solar cells can be increased by applying angularly selective filters. It is shown in terms of detailed balance model, why this happens and the concept is proven...

Hoehn, Oliver; Kraus, Tobias; Bauhuis, Gerard; Schwarz, Ulrich T; Bläsi, Benedikt

478

Transverse acoustic actuation of Ni-Mn-Ga single crystals  

E-Print Network (OSTI)

Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

Simon, Jesse Matthew

2007-01-01T23:59:59.000Z

479

Modeling of InGaN/Si tandem solar cells  

Science Journals Connector (OSTI)

We investigate theoretically the characteristics of monolithic InGaN/Si two-junction series-connected solar cells using the air mass 1.5 global irradiance spectrum. The addition of an InGaN junction is found to produce significant increases in the energy conversion efficiency of the solar cell over that of one-junction Si cells. Even when Si is not of high quality such two-junction cells could achieve efficiencies high enough to be practically feasible. We also show that further though smaller improvements of the efficiency can be achieved by adding another junction to form an InGaN/InGaN/Si three-junction cell.

L. Hsu; W. Walukiewicz

2008-01-01T23:59:59.000Z

480

Exciton front propagation in photoexcited GaAs quantum wells  

E-Print Network (OSTI)

We report on the study of spatiotemporal self-organization of carriers in photoexcited GaAs quantum wells. Propagating interfaces between electron-rich and hole-rich regions are seen as expanding and collapsing exciton ...

Yang, Sen

Note: This page contains sample records for the topic "dc fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents (OSTI)

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

482

Homogeneous AlGaN/GaN superlattices grown on free-standing (1100) GaN substrates by plasma-assisted molecular beam epitaxy  

SciTech Connect

Two-dimensional and homogeneous growth of m-plane AlGaN by plasma-assisted molecular beam epitaxy has been realized on free-standing (1100) GaN substrates by implementing high metal-to-nitrogen (III/N) flux ratio. AlN island nucleation, often reported for m-plane AlGaN under nitrogen-rich growth conditions, is suppressed at high III/N flux ratio, highlighting the important role of growth kinetics for adatom incorporation. The homogeneity and microstructure of m-plane AlGaN/GaN superlattices are assessed via a combination of scanning transmission electron microscopy and high resolution transmission electron microscopy (TEM). The predominant defects identified in dark field TEM characterization are short basal plane stacking faults (SFs) bounded by either Frank-Shockley or Frank partial dislocations. In particular, the linear density of SFs is approximately 5 × 10{sup ?5} cm{sup ?1}, and the length of SFs is less than 15 nm.

Shao, Jiayi; Malis, Oana [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Zakharov, Dmitri N. [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)] [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States); Edmunds, Colin [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States)] [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, Michael J. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 49707 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 49707 (United States)

2013-12-02T23:59:59.000Z

483

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy  

Science Journals Connector (OSTI)

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular- ... (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as ... back surface field la...

Shulong Lu; Lian Ji; Wei He; Pan Dai; Hui Yang…

2011-10-01T23:59:59.000Z

484

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

485

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network (OSTI)

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

486

The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers  

E-Print Network (OSTI)

have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

487

Data:634ec885-b5dc-4eaa-a681-60dc6f11cc99 | Open Energy Information  

Open Energy Info (EERE)

ec885-b5dc-4eaa-a681-60dc6f11cc99 ec885-b5dc-4eaa-a681-60dc6f11cc99 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Village of New Glarus, Wisconsin (Utility Company) Effective date: 2010/03/01 End date if known: Rate name: Cp-1 Small Power Service Primary Metering Discount with Parallel Generation(20kW or less) Sector: Industrial Description: Power Cost Adjustment Clause - All metered rates shall be subject to a positive or negative power cost adjustment charge equivalent to the amount by which the current cost of power (per kilowatt-hour of sales) is greater or lesser than the base cost of power purchased (per kilowatt-hour of sales). The base cost of power (U) is $0.0721 per kilowatt-hour.

488

Data:5d0b965d-a4cb-440c-b8dc-7fea4c4dc573 | Open Energy Information  

Open Energy Info (EERE)

d-a4cb-440c-b8dc-7fea4c4dc573 d-a4cb-440c-b8dc-7fea4c4dc573 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: City of Escanaba, Michigan (Utility Company) Effective date: 2012/07/01 End date if known: Rate name: Suburban Water Heating Energy Rate Commercial Sector: Commercial Description: To any customer for separately metered controlled water heating, subject to such wiring rules and regulations as are established by the utility. For as long as the City has costs associated with the ownership of the power plant, these costs shall be recovered through the following power plant cost adjustment factor:$0.01000 for all kWh, all service classes. State of Michigan P.A. 295, of Public Acts 2008, commonly referred to as the Clean, Renewable and Efficient Energy Act mandates the electric utility collect the following charges from each electric utility customer: Commercial $0.00200/kWh. The sum of these charges is reflected in adjustments to the energy charge.

489

Data:C20dc812-2e59-42a7-bb52-819a35ab8dc4 | Open Energy Information  

Open Energy Info (EERE)

dc812-2e59-42a7-bb52-819a35ab8dc4 dc812-2e59-42a7-bb52-819a35ab8dc4 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: City of College Station, Texas (Utility Company) Effective date: 2009/07/23 End date if known: Rate name: Medium Commercial - Schedule LP -1 - Primary Service Sector: Commercial Description: Applicable to all commercial or industrial customers where service is taken through one (1) meter at one (1) point of delivery and where the monthly kilowatt demand is equal to or greater than fifteen (15) kW and less than three hundred (300) kW. Before service is furnished hereunder, an individual service agreement contract between the customer and the City may be required outlining all details of the service to be supplied, the terms of the contract, and the obligations of each party.

490

Data:7f136b27-83c9-4c37-9dc2-e580d90dc602 | Open Energy Information  

Open Energy Info (EERE)

7-83c9-4c37-9dc2-e580d90dc602 7-83c9-4c37-9dc2-e580d90dc602 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Public Service Co of NH Effective date: 2012/01/01 End date if known: Rate name: 40W HIGH PRESSURE SODIUM LAMP Sector: Lighting Description: Source or reference: http://www.nu.com/PSNHTariffPDFs/tariff070107.pdf Source Parent: Comments Applicability Demand (kW) Minimum (kW): Maximum (kW): History (months): Energy (kWh) Minimum (kWh): Maximum (kWh): History (months): Service Voltage Minimum (V): Maximum (V): Character of Service Voltage Category: Phase Wiring: << Previous 1 2 3 Next >> << Previous

491

Data:81aaee9c-289f-4511-a9dc-df063dc6a89c | Open Energy Information  

Open Energy Info (EERE)

aaee9c-289f-4511-a9dc-df063dc6a89c aaee9c-289f-4511-a9dc-df063dc6a89c No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Hawley Public Utilities Comm Effective date: 2012/05/01 End date if known: Rate name: MINNKOTA WIND SURCHARGE - RESIDENTIAL Sector: Residential Description: Source or reference: http://www.hawley.govoffice.com/vertical/sites/%7B8CCD72A8-7BD3-4824-833E-37DBC780B17F%7D/uploads/may_2012_rate_sheet.pdf Source Parent: Comments Applicability Demand (kW) Minimum (kW): Maximum (kW): History (months): Energy (kWh) Minimum (kWh): Maximum (kWh): History (months): Service Voltage Minimum (V): Maximum (V):

492

Data:957ec156-bbe9-4d2c-925e-dc1880dc481d | Open Energy Information  

Open Energy Info (EERE)

ec156-bbe9-4d2c-925e-dc1880dc481d ec156-bbe9-4d2c-925e-dc1880dc481d No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: Jemez Mountains Elec Coop, Inc Effective date: End date if known: Rate name: Residential Time of Use Rates Sector: Residential Description: In order to benefit from Time of Use you MUST be able to coordinate most of your electric usage during the Off-Peak Hours. This means using your major appliances such as Electric Thermal Storage Heating Units, baseboard heating (if possible), electric clothes dryers, electric ovens, irons, compressors, power tools, etc. during the Off-Peak hours. Also placing timers on electric appliances like water heaters, hot tubs, saunas and freezers to only use power during Off-Peak hours will help. Any appliance you can operate during the Off-Peak hours will lower your electric utility bill.

493

Data:9910e9da-d3dc-4dc7-b69a-3616121268f7 | Open Energy Information  

Open Energy Info (EERE)

e9da-d3dc-4dc7-b69a-3616121268f7 e9da-d3dc-4dc7-b69a-3616121268f7 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: City of Lodi, Wisconsin (Utility Company) Effective date: 2010/03/01 End date if known: Rate name: Cp-2 Large Power Time-of-Day Service above 200kW Demand 8am-8pm Primary Metering Discount with Parallel Generation(20kW or less) Sector: Industrial Description: Power Cost Adjustment Clause - All metered rates shall be subject to a positive or negative power cost adjustment charge equivalent to the amount by which the current cost of power (per kilowatt-hour of sales) is greater or lesser than the base cost of power purchased (per kilowatt-hour of sales). The base cost of power (U) is $0.0811 per kilowatt-hour.

494

Data:20897232-72c1-4dc1-a001-d1b55c0dc4f8 | Open Energy Information  

Open Energy Info (EERE)

97232-72c1-4dc1-a001-d1b55c0dc4f8 97232-72c1-4dc1-a001-d1b55c0dc4f8 No revision has been approved for this page. It is currently under review by our subject matter experts. Jump to: navigation, search Loading... 1. Basic Information 2. Demand 3. Energy << Previous 1 2 3 Next >> Basic Information Utility name: City of Bonners Ferry, Idaho (Utility Company) Effective date: 2009/10/01 End date if known: Rate name: Large Commercial: B3PO Sector: Commercial Description: Note: $10.00 added to Fixed monthly charge if Remote Read Device is used. Source or reference: Rates Binder 1, Illinois State University Source Parent: Comments Applicability Demand (kW) Minimum (kW): Maximum (kW): History (months): Energy (kWh) Minimum (kWh): Maximum (kWh): History (months): Service Voltage Minimum (V): Maximum (V):

495

An Analysis of Wintertime Winds in Washington, D.C.  

SciTech Connect

This report consists of a description of the wintertime climatology of wind speed and wind direction around the National Mall in Washington, D.C. Meteorological data for this study were collected at Ronald Reagan Washington National Airport (Reagan National), Dulles International Airport (Dulles), and a set of surface meteorological stations that are located on a number of building tops around the National Mall. A five-year wintertime climatology of wind speed and wind direction measured at Reagan National and Dulles are presented. A more detailed analysis was completed for the period December 2003 through February 2004 using data gathered from stations located around the National Mall, Reagan National, and Dulles. Key findings of our study include the following: * There are systematic differences between the wind speed and wind direction observed at Reagan National and the wind speed and wind direction measured by building top weather stations located in the National Mall. Although Dulles is located much further from the National Mall than Reagan National, there is better agreement between the wind speed and wind direction measured at Dulles and the weather stations in the National Mall. * When the winds are light (less than 3 ms-1 or 7 mph), there are significant differences in the wind directions reported at the various weather stations within the Mall. * Although the mean characteristics of the wind are similar at the various locations, significant, short-term differences are found when the time series are compared. These differences have important implications for the dispersion of airborne contaminants. In support of wintertime special events in the area of the National Mall, we recommend placing four additional meteorological instruments: three additional surface stations, one on the east bank of the Potomac River, one south of the Reflecting Pool (to better define the flow within the Mall), and a surface station near the Herbert C. Hoover Building; and wind-profiling instrument located along the southern