Sample records for dave gates generating

  1. Digital gate pulse generator for cycloconverter control

    DOE Patents [OSTI]

    Klein, Frederick F. (Monroeville, PA); Mutone, Gioacchino A. (Pleasant Hills, PA)

    1989-01-01T23:59:59.000Z

    The present invention provides a digital gate pulse generator which controls the output of a cycloconverter used for electrical power conversion applications by determining the timing and delivery of the firing pulses to the switching devices in the cycloconverter. Previous gate pulse generators have been built with largely analog or discrete digital circuitry which require many precision components and periodic adjustment. The gate pulse generator of the present invention utilizes digital techniques and a predetermined series of values to develop the necessary timing signals for firing the switching device. Each timing signal is compared with a reference signal to determine the exact firing time. The present invention is significantly more compact than previous gate pulse generators, responds quickly to changes in the output demand and requires only one precision component and no adjustments.

  2. Efficient polarization gating of high-order harmonic generation by polarization-shaped ultrashort pulses

    E-Print Network [OSTI]

    Silberberg, Yaron

    Polarization gating of high-order harmonic generation takes advantage of the significant reduction of har for generation of polarization gated pulses using wave-plate combinations is inefficient, and propose photon energy radiation from the harmonic spectrum. Need- less to say, the generation of near single

  3. Dave Cowley | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  4. Employee Spotlight: Dave Keller

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  5. Conservation of Bumblebees Dave Goulson

    E-Print Network [OSTI]

    1 Conservation of Bumblebees Dave Goulson School of Biological & Environmental Sciences, University landscapes. 1 Chapter 27 27. Conservation of Bumblebees #12;27.1 Introduction The world bumblebee (Bombus., 2008). Aside from the implications for conservation, there are good financial reasons for conserving

  6. On Monday, January 14th , 2013, our colleague, Dr. Dave Pariser, passed away unexpectedly. Dave was a

    E-Print Network [OSTI]

    On Monday, January 14th , 2013, our colleague, Dr. Dave Pariser, passed away unexpectedly. Dave policy. We'll miss Dave, but he lives on in all of the lives he impacted. The Dave Pariser Memorial of the donation and choose the designated fund, the Dave Pariser Memorial Scholarship Fund. http

  7. Dave Kaminsky Charles L. Black

    E-Print Network [OSTI]

    Edwin D. McKay Thomas L. McNeely Jean C. Persons Neysa P. Pickens Armant C. Touchy Jack S. Zoller 19511935 $50.00 Dave Kaminsky 1938 $200.00 Charles L. Black 1940 $50.00 Harold S. Miropol 1941 $67. Tennison Ben Thompson 1945 $250.00 Paul Finkelstein Harold J. Jacobs Lawrence Kahn 1946 $2,250.00 David W

  8. Risk analysis study of non-routine turbine/generator shutdown events and intake gate evaluation

    SciTech Connect (OSTI)

    Bardy, D.M. [Hydroelectric Design Center, Portland, OR (United States)

    1995-12-31T23:59:59.000Z

    The Corps of Engineers has undertaken a study to perform a reliability and risk analysis for evaluating non-routine turbine/generator shutdown scenarios. The study will evaluate the risks associated with events that would require a powerhouse to shut down a turbine/generator by using intake gates. The goal of this project is to estimate any potential damage that could occur for various intake gate configurations and closure times. The data obtained can also be used to evaluate any of the systems that affect reliability of the turbine/generator using established methods of risk analysis. This paper will briefly outline the study objectives and describe the progress of the study to this point.

  9. Attosecond x-ray source generation from two-color polarized gating plasmonic field enhancement

    SciTech Connect (OSTI)

    Feng, Liqiang [College of Science, Liaoning University of Technology, Jinzhou 121000 (China) [College of Science, Liaoning University of Technology, Jinzhou 121000 (China); State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Yuan, Minghu [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China)] [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Chu, Tianshu [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China) [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Institute for Computational Sciences and Engineering, Laboratory of New Fiber Materials and Modern Textile, The Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China)

    2013-12-15T23:59:59.000Z

    The plasmonic field enhancement from the vicinity of metallic nanostructures as well as the polarization gating technique has been utilized to the generation of the high order harmonic and the single attosecond x-ray source. Through numerical solution of the time-dependent Schrödinger equation, for moderate the inhomogeneity and the polarized angle of the two fields, we find that not only the harmonic plateau has been extended and enhanced but also the single short quantum path has been selected to contribute to the harmonic. As a result, a series of 50 as pulses around the extreme ultraviolet and the x-ray regions have been obtained. Furthermore, by investigating the other parameters effects on the harmonic emission, we find that this two-color polarized gating plasmonic field enhancement scheme can also be achieved by the multi-cycle pulses, which is much better for experimental realization.

  10. The susceptibility of silicon-ion implanted gate insulators to x-ray radiation-induced defect generation

    SciTech Connect (OSTI)

    Reisman, A.; Sune, C.T.; Williams, C.K. (MCNC, Research Triangle Park, NC (US))

    1991-03-01T23:59:59.000Z

    This paper examines the x-ray susceptibility of silicon-ion implanted gate insulators of insulated gate-field effect transistors (IGFETs). It is found that silicon-ion implanted gate insulators appear to be much more susceptible to x-ray radiation induced defect generation than unimplanted devices. The residual defect density in silicon-implanted devices, following x-ray radiation, and subsequent postmetal annealing for up to 60 min is found to be greater than that in unimplanted devices. The results with silicon ions indicate that if the insulator is damaged by such a species during processing, as might occur due to knock-on from the gate electrode during source/drain formation, unannealable defects will form which would also tend to make the device structure more susceptible to radiation damage in a hostile environment, or to large hot- electron drift in conventional use.

  11. C. David (Dave) Warren Field Technical Manager

    E-Print Network [OSTI]

    , Processing Technologies 1B lbs/year Wind Energy Enables Longer Blade Designs and More EfficientC. David (Dave) Warren Field Technical Manager Transportation Materials Research Oak Ridge National by UT-Battelle for the U.S. Department of Energy Presentation_name Questions for Today Materials How can

  12. Carbon dioxide and methane in karst systems Supervisors: Prof Dave Mattey, Dr Dave Lowry and Dr. Rebecca Fisher

    E-Print Network [OSTI]

    Royal Holloway, University of London

    Carbon dioxide and methane in karst systems Supervisors: Prof Dave Mattey, Dr Dave Lowry and Dr in the carbon cycle and very little is known about the behavior of methane in karst systems. Methane carbon isotopic evidence for oxidation of atmospheric methane in a dynamically ventilated cave

  13. Dave, Corbus, Energy Reliability in a Changing Landscape

    Broader source: Energy.gov (indexed) [DOE]

    Energy Reliability in a Changing Landscape Dave Corbus Laboratory Program Manager, Electricity Systems Federal U )lity P artnership Working G roup M ee)ng January 1 415 th , 2 014...

  14. "Ask Argonne" - Dave Grabaskas, Nuclear Engineer, Part 2

    SciTech Connect (OSTI)

    Grabaskas, Dave

    2013-09-13T23:59:59.000Z

    Part 1 (http://www.youtube.com/watch?v=Vs_0wXoSL8M) of Dr. Dave Grabaskas' "Ask Argonne" video set drew many questions from the public. In Part 2, Grabaskas answers three of those questions.

  15. "Ask Argonne" - Dave Grabaskas, Nuclear Engineer, Part 2

    ScienceCinema (OSTI)

    Grabaskas, Dave

    2014-11-24T23:59:59.000Z

    Part 1 (http://www.youtube.com/watch?v=Vs_0wXoSL8M) of Dr. Dave Grabaskas' "Ask Argonne" video set drew many questions from the public. In Part 2, Grabaskas answers three of those questions.

  16. Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement

    SciTech Connect (OSTI)

    Katsuno, Takashi, E-mail: e1417@mosk.tytlabs.co.jp; Ishikawa, Tsuyoshi; Ueda, Hiroyuki; Uesugi, Tsutomu [Toyota Central R and D Laboratories Inc., Nagakute, Aichi 480-1192 (Japan); Manaka, Takaaki; Iwamoto, Mitsumasa [Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552 (Japan)

    2014-06-23T23:59:59.000Z

    Two-dimensional current collapse imaging of a Schottky gate AlGaN/GaN high electron mobility transistor device was achieved by optical electric field-induced second-harmonic generation (EFISHG) measurements. EFISHG measurements can detect the electric field produced by carriers trapped in the on-state of the device, which leads to current collapse. Immediately after (e.g., 1, 100, or 800??s) the completion of drain-stress voltage (200?V) in the off-state, the second-harmonic (SH) signals appeared within 2??m from the gate edge on the drain electrode. The SH signal intensity became weak with time, which suggests that the trapped carriers are emitted from the trap sites. The SH signal location supports the well-known virtual gate model for current collapse.

  17. Organic Electronics and Photovoltaics CopyrightDaveWhite2008

    E-Print Network [OSTI]

    ENERGY Organic Electronics and Photovoltaics Objective CopyrightDaveWhite2008 Organic electronics and photovoltaic technology are reaching critical mass with the establishment of a U.S. consortium and the recent an inte- grated suite of measurement methods to tie the electrical and photovoltaic performance of organic

  18. Optical XOR gate

    DOE Patents [OSTI]

    Vawter, G. Allen

    2013-11-12T23:59:59.000Z

    An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  19. DAVE: A plug and play model for distributed multimedia application development

    SciTech Connect (OSTI)

    Mines, R.F.; Friesen, J.A.; Yang, C.L.

    1994-07-01T23:59:59.000Z

    This paper presents a model being used for the development of distributed multimedia applications. The Distributed Audio Video Environment (DAVE) was designed to support the development of a wide range of distributed applications. The implementation of this model is described. DAVE is unique in that it combines a simple ``plug and play`` programming interface, supports both centralized and fully distributed applications, provides device and media extensibility, promotes object reuseability, and supports interoperability and network independence. This model enables application developers to easily develop distributed multimedia applications and create reusable multimedia toolkits. DAVE was designed for developing applications such as video conferencing, media archival, remote process control, and distance learning.

  20. Dave Patterson President of Intel Federal LLC Vice President, Intel Data Center Group

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed Newcatalyst phasesData Files Data Files 1 EIA Best Estimate ofandDatabasesTopDaveDave

  1. Effect of Oxygen on Ni-Silicided FUSI Metal Gate

    E-Print Network [OSTI]

    Yu, H.P.

    Continual evolution of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-65 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...

  2. Program B.S. in Geology Assessment Coordinator for the program Dave Kreamer

    E-Print Network [OSTI]

    Hemmers, Oliver

    1 Program B.S. in Geology Assessment Coordinator for the program Dave Kreamer Department. Student Learning Outcomes for the program. By the end of the Geology program students will be able, and the environments in which they lived. 4. Recognize, in the field, various types of geologic structures, and be able

  3. Measurement of Infrasound Emissions from Wind Turbines Dave Pepyne, Michael Zink and Jamyang Tenzin

    E-Print Network [OSTI]

    Mountziaris, T. J.

    Measurement of Infrasound Emissions from Wind Turbines Dave Pepyne, Michael Zink and Jamyang Tenzin energy has made wind turbine technology a suitable candidate for pollution-free energy. With its great that received many complaints from the residents living near the large wind turbine poles. Many scientists

  4. Billiards Digest February, 2010 David Alciatore, PhD ("Dr. Dave") ILLUSTRATED PRINCIPLES

    E-Print Network [OSTI]

    Alciatore, David G.

    Billiards Digest February, 2010 David Alciatore, PhD ("Dr. Dave") ILLUSTRATED PRINCIPLES "VEPS GEMS the 12-ball or 13-ball, or both, as demonstrated in NV B.68. #12;Billiards Digest February, 2010 8 11 Digest February, 2010 8 11 12 13 stun shot 90º tangent line "good-action" draw trisect direction medium

  5. Billiards Digest January, 2010 David Alciatore, PhD ("Dr. Dave") ILLUSTRATED PRINCIPLES

    E-Print Network [OSTI]

    Alciatore, David G.

    Billiards Digest January, 2010 David Alciatore, PhD ("Dr. Dave") ILLUSTRATED PRINCIPLES "VEPS GEMS" (i.e., "canned"). Now I feel like I have Billiards Digest "tenure." I can't believe it has been six and Position 1. cut shots 2. stun shots 3. follow shots #12;Billiards Digest January, 2010 4. draw shots 5. CB

  6. Billiards Digest April, 2011 David Alciatore, PhD ("Dr. Dave") ILLUSTRATED PRINCIPLES

    E-Print Network [OSTI]

    Alciatore, David G.

    Billiards Digest April, 2011 David Alciatore, PhD ("Dr. Dave") ILLUSTRATED PRINCIPLES "VEPS GEMS shots, Coriolis' system is a good place to start. #12;Billiards Digest April, 2011 a) side view b) top shot speed effects #12;Billiards Digest April, 2011 Diagram 3 (similar t

  7. A STARMA MODEL FOR SOLAR RADIATION Chris Glasbey & Dave Allcroft

    E-Print Network [OSTI]

    Glasbey, Chris

    stabilizing the intermittency of wind power. If the car has installed solar panel, it may further generate

  8. Voltage-gated Ion Channels and Gating Modifier Toxins William A. Catterall,* Sandrine Cestle,

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    ;2 Abstract Voltage-gated sodium, calcium, and potassium channels generate electrical signals required and a pore loop. Their pores are formed by the S5/S6 segments and the pore loop between them and are gated and participate in calcium signaling pathways in nonexcitable cells. Because of their importance in many aspects

  9. From: Dave Ulery To: Congestion Study Comments Subject: 2014 Congestion Study Comment...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

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  10. From: McCurdy, Dave [mailto:DMcCurdy@aga.org]

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensional Electrical Resistivityconnie0:59 PM I34KerynMCKEOWNMcCurdy, Dave

  11. Workfunction Tuning of n-Channel MOSFETs Using Interfacial Yttrium Layer in Fully Silicided Nickel Gate

    E-Print Network [OSTI]

    Yu, Hongpeng

    Continual scaling of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-45 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...

  12. Layered Organic Structure at the Carbon Tetrachloride-Water Interface Dennis K. Hore, Dave S. Walker, and Geraldine L. Richmond*

    E-Print Network [OSTI]

    Richmond, Geraldine L.

    Layered Organic Structure at the Carbon Tetrachloride-Water Interface Dennis K. Hore, Dave S remediation. The carbon tetrachloride-water interface in particular has been the subject of numerous the density profile across the interface. No detailed studies of the carbon tetrachloride structure

  13. The Sting Racing Team's Entry to the Urban Matthew Powers, Dave Wooden, Magnus Egerstedt, Henrik Christensen, and

    E-Print Network [OSTI]

    Egerstedt, Magnus

    The Sting Racing Team's Entry to the Urban Challenge Matthew Powers, Dave Wooden, Magnus Egerstedt/Crusher, the LAGR project [2, 3])in which the world is static and the robot itself is the primary moving object. Externally, perception processes provide fused sensing information based on a wide array of sensing

  14. Optical NAND gate

    SciTech Connect (OSTI)

    Skogen, Erik J. (Albuquerque, NM); Raring, James (Goleta, CA); Tauke-Pedretti, Anna (Albuquerque, NM)

    2011-08-09T23:59:59.000Z

    An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  15. A p-cell approach to integer gate sizing

    E-Print Network [OSTI]

    Doddannagari, Uday

    2009-05-15T23:59:59.000Z

    cell (p-cell) approach to the generation of layouts of standard gates is presented. The use of constant delay model for gate delay estimation is proposed which eliminates the need for maintaining huge volumes of delay tables in the standard cell library...

  16. Optical NOR gate

    DOE Patents [OSTI]

    Skogen, Erik J. (Albuquerque, NM); Tauke-Pedretti, Anna (Albuquerque, NM)

    2011-09-06T23:59:59.000Z

    An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  17. Advanced insulated gate bipolar transistor gate drive

    DOE Patents [OSTI]

    Short, James Evans (Monongahela, PA); West, Shawn Michael (West Mifflin, PA); Fabean, Robert J. (Donora, PA)

    2009-08-04T23:59:59.000Z

    A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

  18. Use of high-level design information for enabling automation of fine-grained power gating

    E-Print Network [OSTI]

    Agarwal, Abhinav

    2014-01-01T23:59:59.000Z

    Leakage power reduction through power gating requires considerable design and verification effort. Conventionally, extensive analysis is required for dividing a heterogeneous design into power domains and generating control ...

  19. Cardiac gated ventilation

    SciTech Connect (OSTI)

    Hanson, C.W. III [Hospital of the Univ. of Pennsylvania, Philadelphia, PA (United States). Dept. Anesthesia; Hoffman, E.A. [Univ. of Iowa College of Medicine, Iowa City, IA (United States). Div. of Physiologic Imaging

    1995-12-31T23:59:59.000Z

    There are several theoretic advantages to synchronizing positive pressure breaths with the cardiac cycle, including the potential for improving distribution of pulmonary and myocardial blood flow and enhancing cardiac output. The authors evaluated the effects of synchronizing respiration to the cardiac cycle using a programmable ventilator and electron beam CT (EBCT) scanning. The hearts of anesthetized dogs were imaged during cardiac gated respiration with a 50 msec scan aperture. Multi slice, short axis, dynamic image data sets spanning the apex to base of the left ventricle were evaluated to determine the volume of the left ventricular chamber at end-diastole and end-systole during apnea, systolic and diastolic cardiac gating. The authors observed an increase in cardiac output of up to 30% with inspiration gated to the systolic phase of the cardiac cycle in a non-failing model of the heart.

  20. Golden Gate Park Marina Blvd.

    E-Print Network [OSTI]

    Derisi, Joseph

    St. Eureka S.VanNessAve. M arket St. Broadway St. To Golden Gate Bridge H ow ard St. Folsom St. Bryant St. 10 North / Golden Gate Bridge 2. Exit I­280 North toward Downtown San Francisco 3. Exit Mariposa St. toward80 280 Presidio Golden Gate Park Lincoln Park Buena Vista Park 101 101 101 101 1 1 Marina Blvd. Bay

  1. Gated x-ray detector for the National Ignition Facility

    SciTech Connect (OSTI)

    Oertel, John A.; Aragonez, Robert; Archuleta, Tom; Barnes, Cris; Casper, Larry; Fatherley, Valerie; Heinrichs, Todd; King, Robert; Landers, Doug; Lopez, Frank; Sanchez, Phillip; Sandoval, George; Schrank, Lou; Walsh, Peter; Bell, Perry; Brown, Matt; Costa, Robert; Holder, Joe; Montelongo, Sam; Pederson, Neal [Los Alamos National Laboratory, Los Alamos, New Mexico 87544 (United States); Lawrence Livermore National Laboratory, Livermore, California 94551-0808 (United States); VI Control Systems Ltd., Los Alamos, New Mexico 87544 (United States)

    2006-10-15T23:59:59.000Z

    Two new gated x-ray imaging cameras have recently been designed, constructed, and delivered to the National Ignition Facility in Livermore, CA. These gated x-Ray detectors are each designed to fit within an aluminum airbox with a large capacity cooling plane and are fitted with an array of environmental housekeeping sensors. These instruments are significantly different from earlier generations of gated x-ray images due, in part, to an innovative impedance matching scheme, advanced phosphor screens, pulsed phosphor circuits, precision assembly fixturing, unique system monitoring, and complete remote computer control. Preliminary characterization has shown repeatable uniformity between imaging strips, improved spatial resolution, and no detectable impedance reflections.

  2. THE THISL SDR SYSTEM AT TREC8 Dave Abberley (1), Steve Renals (1), Dan Ellis (2) and Tony Robinson (3,4)

    E-Print Network [OSTI]

    Edinburgh, University of

    (20077). was the task of the retrieval system to find the location of the news stories contained withinTHE THISL SDR SYSTEM AT TREC­8 Dave Abberley (1), Steve Renals (1), Dan Ellis (2) and Tony Robinson of Engineering, University of Cambridge, UK (4) SoftSound, UK Email: fd.abberley, s.renalsg@dcs.shef.ac.uk, dpwe

  3. THE THISL SDR SYSTEM AT TREC-8 Dave Abberley (1), Steve Renals (1), Dan Ellis (2) and Tony Robinson (3,4)

    E-Print Network [OSTI]

    Ellis, Dan

    (20077). was the task of the retrieval system to find the location of the news stories contained withinTHE THISL SDR SYSTEM AT TREC-8 Dave Abberley (1), Steve Renals (1), Dan Ellis (2) and Tony Robinson of Engineering, University of Cambridge, UK (4) SoftSound, UK Email: fd.abberley, s.renalsg@dcs.shef.ac.uk, dpwe

  4. THE THISL SDR SYSTEM AT TREC-8 Dave Abberley (1), Steve Renals (1), Dan Ellis (2) and Tony Robinson (3,4)

    E-Print Network [OSTI]

    Edinburgh, University of

    stories contained within it. The TREC-8 SDR track was designed to test how SDR systems perform with a muchTHE THISL SDR SYSTEM AT TREC-8 Dave Abberley (1), Steve Renals (1), Dan Ellis (2) and Tony Robinson of Engineering, University of Cambridge, UK (4) SoftSound, UK Email: d.abberley, s.renals¡ @dcs

  5. Penn State DOE GATE Program

    SciTech Connect (OSTI)

    Anstrom, Joel

    2012-08-31T23:59:59.000Z

    The Graduate Automotive Technology Education (GATE) Program at The Pennsylvania State University (Penn State) was established in October 1998 pursuant to an award from the U.S. Department of Energy (U.S. DOE). The focus area of the Penn State GATE Program is advanced energy storage systems for electric and hybrid vehicles.

  6. Developing Language Processing Components with GATE

    E-Print Network [OSTI]

    Maynard, Diana

    Developing Language Processing Components with GATE (a User Guide) For GATE version 3 beta 1 (July.3 Troubleshooting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 3.4 [D] Get Started

  7. Locally observable conditions for the successful implementation of entangling multi-qubit quantum gates

    E-Print Network [OSTI]

    Holger F. Hofmann; Ryo Okamoto; Shigeki Takeuchi

    2005-09-01T23:59:59.000Z

    The information obtained from the operation of a quantum gate on only two complementary sets of input states is sufficient to estimate the quantum process fidelity of the gate. In the case of entangling gates, these conditions can be used to predict the multi qubit entanglement capability from the fidelities of two non-entangling local operations. It is then possible to predict highly non-classical features of the gate such as violations of local realism from the fidelities of two completely classical input-output relations, without generating any actual entanglement.

  8. A proposal for the realization of universal quantum gates via superconducting qubits inside a cavity

    SciTech Connect (OSTI)

    Obada, A.-S.F. [Faculty of Science, Al-Azhar University, Nasr City, Cairo (Egypt)] [Faculty of Science, Al-Azhar University, Nasr City, Cairo (Egypt); Hessian, H.A. [Faculty of Science, Assiut University, Assiut (Egypt)] [Faculty of Science, Assiut University, Assiut (Egypt); Mohamed, A.-B.A. [Faculty of Science, Assiut University, Assiut (Egypt) [Faculty of Science, Assiut University, Assiut (Egypt); Community College, Salman Bin Abdulaziz University, Al-Aflaj (Saudi Arabia); Homid, Ali H., E-mail: alihimad@yahoo.com [Faculty of Science, Al-Azhar University, Assiut (Egypt)

    2013-07-15T23:59:59.000Z

    A family of quantum logic gates is proposed via superconducting (SC) qubits coupled to a SC-cavity. The Hamiltonian for SC-charge qubits inside a single mode cavity is considered. Three- and two-qubit operations are generated by applying a classical magnetic field with the flux. Therefore, a number of quantum logic gates are realized. Numerical simulations and calculation of the fidelity are used to prove the success of these operations for these gates. -- Highlights: •A family of quantum logic gates is proposed via SC-qubits coupled to a cavity. •Three- and two-qubit operations are generated via a classical field with the flux. •Numerical simulations and calculation of the fidelity are used to prove the success of these operations for these gates.

  9. Non-Hermitian quantum gates are more common than Hermitian quantum gates

    E-Print Network [OSTI]

    Anirban Pathak

    2013-09-16T23:59:59.000Z

    Most of the frequently used quantum gates (e.g., NOT, Hadamard, CNOT, SWAP, Toffoli, Fredkin and Pauli gates) are self-inverse (Hermitian). However, with a simple minded argument it is established that most of the allowed quantum gates are non-Hermitian (non-self-inverse). It is also shown that the % of non-Hermitian gates increases with the dimension. For example, 58.33% of the 2-qubit gates, 98.10% of the 3-qubit gates and 99.99% of the 4-qubit gates are non-Hermitian. As classical reversible gates are essentially permutation gates so the above statistics is strictly valid for classical reversible gates. Further, since Hermiticity is not of much interest in context of the classical reversible gate, hence the result implies that most of the allowed classical reversible gates are non-self-inverse.

  10. Single qubit, two qubit gates and no signalling principle

    E-Print Network [OSTI]

    Indranil Chakrabarty

    2009-01-31T23:59:59.000Z

    In this work we investigate that whether one can construct single and two qubit gates for arbitrary quantum states from the principle of no signalling. We considered the problem for Pauli gates, Hadamard gate, C-Not gate.

  11. Repeat-until-success cubic phase gate for universal continuous-variable quantum computation

    E-Print Network [OSTI]

    Kevin Marshall; Raphael Pooser; George Siopsis; Christian Weedbrook

    2014-12-01T23:59:59.000Z

    In order to achieve universal quantum computation using continuous variables, one needs to jump out of the set of Gaussian operations and have a non-Gaussian element, such as the cubic phase gate. However, such a gate is currently very difficult to implement in practice. Here we introduce an experimentally viable 'repeat-until-success' approach to generating the cubic phase gate, which is achieved using sequential photon subtractions and Gaussian operations. We find that our scheme offers benefits in terms of the expected time until success, although we require a primitive quantum memory.

  12. Composite two-qubit quantum gates

    E-Print Network [OSTI]

    Svetoslav S. Ivanov; Nikolay V. Vitanov

    2015-03-30T23:59:59.000Z

    We design composite two-qubit gates, based on the Ising-type interaction. The gates are robust against systematic errors in the qubits' interaction strength and the gate's implementation time. We give composite sequences, which cancel the error up to 6th order, and give a method to achieve even higher accuracy. Our sequences can compensate either relative or absolute errors. For relative error compensation the number of the ingredient gates grows linearly with the desired accuracy, while for absolute compensation only two gates are required to achieve infinitely accurate gates. We also consider an ion-trap implementation of our composite gates, where our sequences achieve simultaneous cancellation of the error in both the pulse area and the detuning.

  13. Advanced Gate Drive for the SNS High Voltage Converter Modulator

    SciTech Connect (OSTI)

    Nguyen, M.N.; Burkhart, C.; Kemp, M.A.; /SLAC; Anderson, D.E.; /Oak Ridge

    2009-05-07T23:59:59.000Z

    SLAC National Accelerator Laboratory is developing a next generation H-bridge switch plate [1], a critical component of the SNS High Voltage Converter Modulator [2]. As part of that effort, a new IGBT gate driver has been developed. The drivers are an integral part of the switch plate, which are essential to ensuring fault-tolerant, high-performance operation of the modulator. The redesigned driver improves upon the existing gate drive in several ways. The new gate driver has improved fault detection and suppression capabilities; suppression of shoot-through and over-voltage conditions, monitoring of dI/dt and Vce(sat) for fast over-current detection and suppression, and redundant power isolation are some of the added features. In addition, triggering insertion delay is reduced by a factor of four compared to the existing driver. This paper details the design and performance of the new IGBT gate driver. A simplified schematic and description of the construction are included. The operation of the fast over-current detection circuits, active IGBT over-voltage protection circuit, shoot-through prevention circuitry, and control power isolation breakdown detection circuit are discussed.

  14. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Gate Oxide Formation in Real Time Looking at Transistor Gate Oxide Formation in Real Time Print Wednesday, 25 June 2008 00:00 The oxide gate layer is critical to every transistor,...

  15. Quantum logic gates for superconducting resonator qudits

    SciTech Connect (OSTI)

    Strauch, Frederick W. [Williams College, Williamstown, Massachusetts 01267 (United States)

    2011-11-15T23:59:59.000Z

    We study quantum information processing using superpositions of Fock states in superconducting resonators as quantum d-level systems (qudits). A universal set of single and coupled logic gates is theoretically proposed for resonators coupled by superconducting circuits of Josephson junctions. These gates use experimentally demonstrated interactions and provide an attractive route to quantum information processing using harmonic oscillator modes.

  16. Automatically closing swing gate closure assembly

    DOE Patents [OSTI]

    Chang, Shih-Chih (Richland, WA); Schuck, William J. (Richland, WA); Gilmore, Richard F. (Kennewick, WA)

    1988-01-01T23:59:59.000Z

    A swing gate closure assembly for nuclear reactor tipoff assembly wherein the swing gate is cammed open by a fuel element or spacer but is reliably closed at a desired closing rate primarily by hydraulic forces in the absence of a fuel charge.

  17. GATE Center of Excellence at UAB in Lightweight Materials for...

    Broader source: Energy.gov (indexed) [DOE]

    GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications 2011 DOE...

  18. PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR 2009 DOE Hydrogen Program and...

  19. GATE Center of Excellence at UAB in Lightweight Materials for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    & Publications GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications GATE Center of Excellence at UAB in Lightweight Materials for...

  20. Vehicle Technologies Office Merit Review 2014: GATE Center of...

    Broader source: Energy.gov (indexed) [DOE]

    GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit. ti026vaidya2014p.pdf More Documents & Publications GATE...

  1. Penn State DOE Graduate Automotive Technology Education (Gate...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    DOE Graduate Automotive Technology Education (Gate) Program for In-Vehicle, High-Power Energy Storage Systems Penn State DOE Graduate Automotive Technology Education (Gate)...

  2. University of Illinois at Urbana-Champaign's GATE Center for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Urbana-Champaign's GATE Center for Advanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana-Champaign's GATE Center for Advanced Automotive Bio-Fuel...

  3. GATE Center of Excellence at UAB in Lightweight Materials for...

    Broader source: Energy.gov (indexed) [DOE]

    vaidya.pdf More Documents & Publications GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications GATE Center of Excellence at UAB in Lightweight...

  4. Gating of Permanent Molds for ALuminum Casting

    SciTech Connect (OSTI)

    David Schwam; John F. Wallace; Tom Engle; Qingming Chang

    2004-03-30T23:59:59.000Z

    This report summarizes a two-year project, DE-FC07-01ID13983 that concerns the gating of aluminum castings in permanent molds. The main goal of the project is to improve the quality of aluminum castings produced in permanent molds. The approach taken was determine how the vertical type gating systems used for permanent mold castings can be designed to fill the mold cavity with a minimum of damage to the quality of the resulting casting. It is evident that somewhat different systems are preferred for different shapes and sizes of aluminum castings. The main problems caused by improper gating are entrained aluminum oxide films and entrapped gas. The project highlights the characteristic features of gating systems used in permanent mold aluminum foundries and recommends gating procedures designed to avoid common defects. The study also provides direct evidence on the filling pattern and heat flow behavior in permanent mold castings.

  5. A Stochastic Approach for the Analysis of Fault Trees with Priority AND Gates

    E-Print Network [OSTI]

    Han, Jie

    dependency gate PAND priority AND gate SEQ sequence enforcing gate WSP warm spare gate CSP cold spare gate time [1]. Failures can be disastrous for systems such as chemical plants, nuclear reactors, airplane gates that include the warm spare gate (WSP) and cold spare gate (CSP), and the functional dependency

  6. Dave Kaminsky Herbert Derman

    E-Print Network [OSTI]

    P. Incaprera Ralph Levin Burton Lindau Thomas L. McNeely Neysa P. Pickens Armant C. Touchy 1951 $550. Bryan Luikart 1945 $350.00 Harold P. Chastant Paul Finkelstein Lawrence I. Kahn 1946 $230.00 David W. Toniette Harold M. Voss 1956 $3,625.00 Joseph P. Barreca Quinn H. Becker R. Luke Bordelon Albert H

  7. Dave Brawn | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed Newcatalyst phasesData Files Data Files 1 EIA Best Estimate ofandDatabasesTop

  8. Dave Roberts POBox

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed Newcatalyst phasesData Files Data Files 1 EIA Best Estimate

  9. Dave Brawn | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series to UserProduct: CrudeOffice ofINL is aID Service FirstMeetings -Brawn

  10. Dave Cowley | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series to UserProduct: CrudeOffice ofINL is aID Service FirstMeetings

  11. Employee Spotlight: Dave Keller

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series toESnet4: Networking for37 East and West OtherEmployeeLosAli

  12. GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications

    SciTech Connect (OSTI)

    None

    2011-07-31T23:59:59.000Z

    This report summarizes the accomplishments of the UAB GATE Center of Excellence in Lightweight Materials for Automotive Applications. The first Phase of the UAB DOE GATE center spanned the period 2005-2011. The UAB GATE goals coordinated with the overall goals of DOE's FreedomCAR and Vehicles Technologies initiative and DOE GATE program. The FCVT goals are: (1) Development and validation of advanced materials and manufacturing technologies to significantly reduce automotive vehicle body and chassis weight without compromising other attributes such as safety, performance, recyclability, and cost; (2) To provide a new generation of engineers and scientists with knowledge and skills in advanced automotive technologies. The UAB GATE focused on both the FCVT and GATE goals in the following manner: (1) Train and produce graduates in lightweight automotive materials technologies; (2) Structure the engineering curricula to produce specialists in the automotive area; (3) Leverage automotive related industry in the State of Alabama; (4) Expose minority students to advanced technologies early in their career; (5) Develop innovative virtual classroom capabilities tied to real manufacturing operations; and (6) Integrate synergistic, multi-departmental activities to produce new product and manufacturing technologies for more damage tolerant, cost-effective, and lighter automotive structures.

  13. Correlation of gross tumor volume excursion with potential benefits of respiratory gating

    SciTech Connect (OSTI)

    Starkschall, George [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States)]. E-mail: gstarksc@mdanderson.org; Forster, Kenneth M. [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Kitamura, Kei [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Department of Radiology, Hokkaido University, Graduate School of Medicine, Sapporo (Japan); Cardenas, Alex [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Tucker, Susan L. [Department of Biomathematics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Stevens, Craig W. [Department of Radiation Oncology, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States)

    2004-11-15T23:59:59.000Z

    Purpose: To test the hypothesis that the magnitude of thoracic tumor motion can be used to determine the desirability of respiratory gating. Methods and materials: Twenty patients to be treated for lung tumors had computed tomography image data sets acquired under assisted breath hold at normal inspiration (100% tidal volume), at full expiration (0% tidal volume), and under free breathing. A radiation oncologist outlined gross tumor volumes (GTVs) on the breath-hold computed tomographic images. These data sets were registered to the free-breathing image data set. Two sets of treatment plans were generated: one based on an internal target volume explicitly formed from assessment of the excursion of the clinical target volume (CTV) through the respiratory cycle, representing an ungated treatment, and the other based on the 0% tidal volume CTV, representing a gated treatment with little margin for residual motion. Dose-volume statistics were correlated to the magnitude of the motion of the center of the GTV during respiration. Results: Patients whose GTVs were >100 cm{sup 3} showed little decrease in lung dose under gating. The other patients showed a correlation between the excursion of the center of the GTV and a reduction in potential lung toxicity. As residual motion increased, the benefits of respiratory gating increased. Conclusion: Gating seems to be advantageous for patients whose GTVs are <100 cm{sup 3} and for whom the center of the GTV exhibits significant motion, provided residual motion under gating is kept small.

  14. Locking apparatus for gate valves

    DOE Patents [OSTI]

    Fabyan, Joseph (Livermore, CA); Williams, Carl W. (Manteca, CA)

    1988-01-01T23:59:59.000Z

    A locking apparatus for fluid operated valves having a piston connected to the valve actuator which moves in response to applied pressure within a cylinder housing having a cylinder head, a catch block is secured to the piston, and the cylinder head incorporates a catch pin. Pressure applied to the cylinder to open the valve moves the piston adjacent to the cylinder head where the catch pin automatically engages the catch block preventing futher movement of the piston or premature closure of the valve. Application of pressure to the cylinder to close the valve, retracts the catch pin, allowing the valve to close. Included are one or more selector valves, for selecting pressure application to other apparatus depending on the gate valve position, open or closed, protecting such apparatus from damage due to premature closing caused by pressure loss or operational error.

  15. Anticipatory control of turbine generators

    E-Print Network [OSTI]

    Messec, Freddie Laurel

    1971-01-01T23:59:59.000Z

    of Turbine Generators. (Nay 1971) Freddie Laurel Nessec, B. S. E. E, , Texas Tech University; Directed by: Professor J. S . Denison An investigation is made of the use of predicted loads in controlling turbine generators. A perturbation model of a turbine... generator is presented along with typical parameter values. A study is made of the effects of applying control action before a load change occurs. Two predictive control schemes are investi- gated using a load cycle which incorporates both ramp and step...

  16. Graduate Automotive Technology Education (GATE) Center

    SciTech Connect (OSTI)

    Jeffrey Hodgson; David Irick

    2005-09-30T23:59:59.000Z

    The Graduate Automotive Technology Education (GATE) Center at the University of Tennessee, Knoxville has completed its sixth year of operation. During this period the Center has involved thirteen GATE Fellows and ten GATE Research Assistants in preparing them to contribute to advanced automotive technologies in the center's focus area: hybrid drive trains and control systems. Eighteen GATE students have graduated, and three have completed their course work requirements. Nine faculty members from three departments in the College of Engineering have been involved in the GATE Center. In addition to the impact that the Center has had on the students and faculty involved, the presence of the center has led to the acquisition of resources that probably would not have been obtained if the GATE Center had not existed. Significant industry interaction such as internships, equipment donations, and support for GATE students has been realized. The value of the total resources brought to the university (including related research contracts) exceeds $4,000,000. Problem areas are discussed in the hope that future activities may benefit from the operation of the current program.

  17. SiC Power MOSFET with Improved Gate Dielectric

    SciTech Connect (OSTI)

    Sbrockey, Nick M; Tompa, Gary S; Spencer, Michael G; Chandrashekhar, Chandra MVS

    2010-08-23T23:59:59.000Z

    In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.

  18. Gate potential control of nanofluidic devices

    E-Print Network [OSTI]

    Le Coguic, Arnaud

    2005-01-01T23:59:59.000Z

    The effect of an external gate potential control on the nanofluidic nanochannels was experimentally investigated in this work. Like in the field effect transistors (FET) in microelectronics, molecular transport in ...

  19. Yuanmingyuan East Gate of Peking University

    E-Print Network [OSTI]

    Gu, Jin

    Dingxiangyuan Cafeteria SupermarketI Parking 32 Northeast Gate C Building C Swimming Hall East Playground and New Energy Technology 32 Institute of Education Schools & Departments A Foreign Student Affairs

  20. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23T23:59:59.000Z

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  1. Gate fidelity fluctuations and quantum process invariants

    SciTech Connect (OSTI)

    Magesan, Easwar; Emerson, Joseph [Institute for Quantum Computing and Department of Applied Mathematics, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Blume-Kohout, Robin [Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2011-07-15T23:59:59.000Z

    We characterize the quantum gate fidelity in a state-independent manner by giving an explicit expression for its variance. The method we provide can be extended to calculate all higher order moments of the gate fidelity. Using these results, we obtain a simple expression for the variance of a single-qubit system and deduce the asymptotic behavior for large-dimensional quantum systems. Applications of these results to quantum chaos and randomized benchmarking are discussed.

  2. A proposal for the implementation of quantum gates with photonic-crystal coupled cavity waveguides

    E-Print Network [OSTI]

    Dimitris G. Angelakis; Marcelo Franca Santos; Vassilis Yannopapas; Artur Ekert

    2007-04-12T23:59:59.000Z

    Quantum computers require technologies that offer both sufficient control over coherent quantum phenomena and minimal spurious interactions with the environment. We show, that photons confined to photonic crystals, and in particular to highly efficient waveguides formed from linear chains of defects doped with atoms can generate strong non-linear interactions which allow to implement both single and two qubit quantum gates. The simplicity of the gate switching mechanism, the experimental feasibility of fabricating two dimensional photonic crystal structures and integrability of this device with optoelectronics offers new interesting possibilities for optical quantum information processing networks.

  3. Engineering a C-Phase quantum gate: optical design and experimental realization

    E-Print Network [OSTI]

    Andrea Chiuri; Chiara Greganti; Paolo Mataloni

    2012-04-12T23:59:59.000Z

    A two qubit quantum gate, namely the C-Phase, has been realized by exploiting the longitudinal momentum (i.e. the optical path) degree of freedom of a single photon. The experimental setup used to engineer this quantum gate represents an advanced version of the high stability closed-loop interferometric setup adopted to generate and characterize 2-photon 4-qubit Phased Dicke states. Some experimental results, dealing with the characterization of multipartite entanglement of the Phased Dicke states are also discussed in detail.

  4. Paying the Toll: A Political History of the Golden Gate Bridge and Highway District, 1923-1971

    E-Print Network [OSTI]

    Dyble, Amy Louise Nelson

    2003-01-01T23:59:59.000Z

    Gate: the Construction of the Golden Gate Bridge and HighwayCommittee on Golden Gate Bridge and Highway District,versus the Golden Gate Bridge . . . . . . . . . . . . . . .

  5. The Defeat of the Golden Gate Authority: Regional Planning and Local Power

    E-Print Network [OSTI]

    Dyble, Louise Nelson

    2012-01-01T23:59:59.000Z

    Regional Politics and the Golden Gate Bridge, Philadelphia:Politics and the Golden Gate Bridge, won the Abel WolmanBridge and the Golden Gate Bridge. Moreover, interregional

  6. Heralded quantum gates with integrated error detection in optical cavitites

    E-Print Network [OSTI]

    J. Borregaard; P. Kómár; E. M. Kessler; A. S. Sørensen; M. D. Lukin

    2015-01-05T23:59:59.000Z

    We propose and analyze heralded quantum gates between qubits in optical cavities. They employ an auxiliary qubit to report if a successful gate occurred. In this manner, the errors, which would have corrupted a deterministic gate, are converted into a non-unity probability of success: once successful the gate has a much higher fidelity than a similar deterministic gate. Specifically, we describe that a heralded , near-deterministic controlled phase gate (CZ-gate) with the conditional error arbitrarily close to zero and the success probability that approaches unity as the cooperativity of the system, C, becomes large. Furthermore, we describe an extension to near-deterministic N- qubit Toffoli gate with a favorable error scaling. These gates can be directly employed in quantum repeater networks to facilitate near-ideal entanglement swapping, thus greatly speeding up the entanglement distribution.

  7. UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence

    SciTech Connect (OSTI)

    Erickson, Paul

    2012-05-31T23:59:59.000Z

    This is the final report of the UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence which spanned from 2005-2012. The U.S. Department of Energy (DOE) established the Graduate Automotive Technology Education (GATE) Program, to provide a new generation of engineers and scientists with knowledge and skills to create advanced automotive technologies. The UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence established in 2005 is focused on research, education, industrial collaboration and outreach within automotive technology. UC Davis has had two independent GATE centers with separate well-defined objectives and research programs from 1998. The Fuel Cell Center, administered by ITS-Davis, has focused on fuel cell technology. The Hybrid-Electric Vehicle Design Center (HEV Center), administered by the Department of Mechanical and Aeronautical Engineering, has focused on the development of plug-in hybrid technology using internal combustion engines. The merger of these two centers in 2005 has broadened the scope of research and lead to higher visibility of the activity. UC Davisâ??s existing GATE centers have become the campusâ??s research focal points on fuel cells and hybrid-electric vehicles, and the home for graduate students who are studying advanced automotive technologies. The centers have been highly successful in attracting, training, and placing top-notch students into fuel cell and hybrid programs in both industry and government.

  8. Engineering integrated photonics for heralded quantum gates

    E-Print Network [OSTI]

    T. Meany; D. N. Biggerstaff; M. A. Broome; A. Fedrizzi; M. Delanty; A. Gilchrist; G. D. Marshall; M. J. Steel; A. G. White; M. J. Withford

    2015-02-11T23:59:59.000Z

    Scaling up linear-optics quantum computing will require multi-photon gates which are compact, phase-stable, exhibit excellent quantum interference, and have success heralded by the detection of ancillary photons. We investigate implementation of the optimal known gate design which meets these requirements: the Knill controlled-Z gate, implemented in integrated laser-written waveguide arrays. We show that device performance is more sensitive to the small deviations in the coupler reflectivity, arising due to the tolerance values of the fabrication method, than phase variations in the circuit. The mode fidelity was also shown to be less sensitive to reflectivity and phase errors than process fidelity. Our best device achieves a fidelity of 0.931+/-0.001 with the ideal 4x4 unitary circuit and a process fidelity of 0.680+/-0.005 with the ideal computational-basis process.

  9. Sandia National Laboratories: i-GATE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1development Sandia,evaluatingfullhigher-performancestoragei-GATE ECIS and i-GATE:

  10. Efficient Generation of Generic Entanglement

    E-Print Network [OSTI]

    R. Oliveira; O. C. O. Dahlsten; M. B. Plenio

    2007-04-03T23:59:59.000Z

    We find that generic entanglement is physical, in the sense that it can be generated in polynomial time from two-qubit gates picked at random. We prove as the main result that such a process generates the average entanglement of the uniform (Haar) measure in at most $O(N^3)$ steps for $N$ qubits. This is despite an exponentially growing number of such gates being necessary for generating that measure fully on the state space. Numerics furthermore show a variation cut-off allowing one to associate a specific time with the achievement of the uniform measure entanglement distribution. Various extensions of this work are discussed. The results are relevant to entanglement theory and to protocols that assume generic entanglement can be achieved efficiently.

  11. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 range (1-2...

  12. abnormal sensorimotor gating: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    double dots can be effectively tuned from weak to strong regime by both the in-plane plunger gates and back gate. All the relevant energy scales and parameters of the bilayer...

  13. GATE Center of Excellence at UAB for Lightweight Materials and...

    Broader source: Energy.gov (indexed) [DOE]

    Constante (PhD candidate) and Samuel Jasper (PhD candidate) working on composite beams 9 Accomplishments and Progress: GATE Directly Funded Students (2005-2011) GATE SCHOLAR...

  14. Electroluminescence in ion gel gated organic polymer semiconductor transistors

    E-Print Network [OSTI]

    Bhat, Shrivalli

    2011-07-12T23:59:59.000Z

    This thesis reports the light emission in ion gel gated, thin film organic semiconductor transistors and investigates the light emission mechanism behind these devices. We report that ion gel gated organic polymer semiconductor transistors emit...

  15. Negative quantum capacitance in graphene nanoribbons with lateral gates

    E-Print Network [OSTI]

    Florian, Libisch

    Negative quantum capacitance in graphene nanoribbons with lateral gates R. Reiter1, , U. Derra2 , S numerical simulations of the capacitive coupling between graphene nanoribbons of various widths and gate electrodes in different configurations. We compare the influence of lateral metallic or graphene side gate

  16. Clustering of cyclic-nucleotide-gated channels in olfactory cilia

    E-Print Network [OSTI]

    French, Donald A.

    Clustering of cyclic-nucleotide-gated channels in olfactory cilia Richard J. Flannery* , Donald A channel clusters in olfactory cilia Key words: olfaction, receptor neuron, cyclic-nucleotide-gated channel of olfactory signal transduction, including a high density of cyclic-nucleotide-gated (CNG) channels. CNG

  17. Quantum Logic Gates using q-deformed Oscillators

    E-Print Network [OSTI]

    Debashis Gangopadhyay; Mahendra Nath Sinha Roy

    2006-07-14T23:59:59.000Z

    We show that the quantum logic gates, {\\it viz.} the single qubit Hadamard and Phase Shift gates, can also be realised using q-deformed angular momentum states constructed via the Jordan-Schwinger mechanism with two q-deformed oscillators. {\\it Keywords :} quantum logic gates ; q-deformed oscillators ; quantum computation {\\it PACS:} 03.67.Lx ; 02.20.Uw

  18. Accuracy and Consistency of Respiratory Gating in Abdominal Cancer Patients

    SciTech Connect (OSTI)

    Ge, Jiajia; Santanam, Lakshmi; Yang, Deshan [Department of Radiation Oncology, Washington University School of Medicine, St Louis, Missouri (United States)] [Department of Radiation Oncology, Washington University School of Medicine, St Louis, Missouri (United States); Parikh, Parag J., E-mail: pparikh@radonc.wustl.edu [Department of Radiation Oncology, Washington University School of Medicine, St Louis, Missouri (United States)

    2013-03-01T23:59:59.000Z

    Purpose: To evaluate respiratory gating accuracy and intrafractional consistency for abdominal cancer patients treated with respiratory gated treatment on a regular linear accelerator system. Methods and Materials: Twelve abdominal patients implanted with fiducials were treated with amplitude-based respiratory-gated radiation therapy. On the basis of daily orthogonal fluoroscopy, the operator readjusted the couch position and gating window such that the fiducial was within a setup margin (fiducial-planning target volume [f-PTV]) when RPM indicated “beam-ON.” Fifty-five pre- and post-treatment fluoroscopic movie pairs with synchronized respiratory gating signal were recorded. Fiducial motion traces were extracted from the fluoroscopic movies using a template matching algorithm and correlated with f-PTV by registering the digitally reconstructed radiographs with the fluoroscopic movies. Treatment was determined to be “accurate” if 50% of the fiducial area stayed within f-PTV while beam-ON. For movie pairs that lost gating accuracy, a MATLAB program was used to assess whether the gating window was optimized, the external-internal correlation (EIC) changed, or the patient moved between movies. A series of safety margins from 0.5 mm to 3 mm was added to f-PTV for reassessing gating accuracy. Results: A decrease in gating accuracy was observed in 44% of movie pairs from daily fluoroscopic movies of 12 abdominal patients. Three main causes for inaccurate gating were identified as change of global EIC over time (?43%), suboptimal gating setup (?37%), and imperfect EIC within movie (?13%). Conclusions: Inconsistent respiratory gating accuracy may occur within 1 treatment session even with a daily adjusted gating window. To improve or maintain gating accuracy during treatment, we suggest using at least a 2.5-mm safety margin to account for gating and setup uncertainties.

  19. Gate-controlled ultraviolet photo-etching of graphene edges

    SciTech Connect (OSTI)

    Mitoma, Nobuhiko; Nouchi, Ryo [Nanoscience and Nanotechnology Research Center, Osaka Prefecture University, Sakai, Osaka 599-8570 (Japan)] [Nanoscience and Nanotechnology Research Center, Osaka Prefecture University, Sakai, Osaka 599-8570 (Japan)

    2013-11-11T23:59:59.000Z

    The chemical reactivity of graphene under ultraviolet (UV) light irradiation is investigated under positive and negative gate electric fields. Graphene edges are selectively etched when negative gate voltages are applied while the reactivity is significantly suppressed for positive gate voltages. Oxygen adsorption onto graphene is significantly affected by the Fermi level of the final state achieved during previous electrical measurements. UV irradiation after negative-to-positive gate sweeps causes predominant oxygen desorption while UV irradiation after gate sweeps in the opposite direction causes etching of graphene edges.

  20. Classification of transversal gates in qubit stabilizer codes

    E-Print Network [OSTI]

    Jonas T. Anderson; Tomas Jochym-O'Connor

    2014-09-29T23:59:59.000Z

    This work classifies the set of diagonal gates that can implement a single or two-qubit transversal logical gate for qubit stabilizer codes. We show that individual physical gates on the underlying qubits that compose the code are restricted to have entries of the form $e^{i \\pi c/2^k}$ along their diagonal, resulting in a similarly restricted class of logical gates that can be implemented in this manner. Moreover, we show that all diagonal logical gates that can be implemented transversally by individual physical diagonal gates must belong to the Clifford hierarchy. Furthermore, we can use this result to prove a conjecture about transversal gates made by Zeng et al. in 2007.

  1. Arbitrary two-qubit computation in 23 elementary gates

    SciTech Connect (OSTI)

    Bullock, Stephen S.; Markov, Igor L. [Department of Mathematics, The University of Michigan, Ann Arbor, Michigan 48109-2122, USA (United States); Mathematical and Computational Sciences Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8910, USA (United States); Department of Electrical Engineering and Computer Science, The University of Michigan, 1301 Beal Avenue-EECS, Ann Arbor, Michigan 48109-2122, USA (United States)

    2003-07-01T23:59:59.000Z

    We address the problem of constructing quantum circuits to implement an arbitrary two-qubit quantum computation. We pursue circuits without ancilla qubits and as small a number of elementary quantum gates as possible. Our lower bound for worst-case optimal two-qubit circuits calls for at least 17 gates: 15 one-qubit rotations and 2 controlled-NOT (CNOT) gates. We also constructively prove a worst-case upper bound of 23 elementary gates, of which at most four (CNOT gates) entail multiqubit interactions. Our analysis shows that synthesis algorithms suggested in previous work, although more general, entail larger quantum circuits than ours in the special case of two qubits. One such algorithm has a worst case of 61 gates, of which 18 may be CNOT gates.

  2. Performance of a 512 x 512 Gated CMOS Imager with a 250 ps Exposure Time

    SciTech Connect (OSTI)

    Teruya, A T; Moody, J D; Hsing, W W; Brown, C G; Griffin, M; Mead, A S

    2012-10-01T23:59:59.000Z

    We describe the performance of a 512x512 gated CMOS read out integrated circuit (ROIC) with a 250 ps exposure time. A low-skew, H-tree trigger distribution system is used to locally generate individual pixel gates in each 8x8 neighborhood of the ROIC. The temporal width of the gate is voltage controlled and user selectable via a precision potentiometer. The gating implementation was first validated in optical tests of a 64x64 pixel prototype ROIC developed as a proof-of-concept during the early phases of the development program. The layout of the H-Tree addresses each quadrant of the ROIC independently and admits operation of the ROIC in two modes. If “common mode” triggering is used, the camera provides a single 512x512 image. If independent triggers are used, the camera can provide up to four 256x256 images with a frame separation set by the trigger intervals. The ROIC design includes small (sub-pixel) optical photodiode structures to allow test and characterization of the ROIC using optical sources prior to bump bonding. Reported test results were obtained using short pulse, second harmonic Ti:Sapphire laser systems operating at ?~ 400 nm at sub-ps pulse widths.

  3. Method for voltage-gated protein fractionation

    DOE Patents [OSTI]

    Hatch, Anson (Tracy, CA); Singh, Anup K. (Danville, CA)

    2012-04-24T23:59:59.000Z

    We report unique findings on the voltage dependence of protein exclusion from the pores of nanoporous polymer exclusion membranes. The pores are small enough that proteins are excluded from passage with low applied electric fields, but increasing the field enables proteins to pass through. The requisite field necessary for a change in exclusion is protein-specific with a correlation to protein size. The field-dependence of exclusion is important to consider for preconcentration applications. The ability to selectively gate proteins at exclusion membranes is also a promising means for manipulating and characterizing proteins. We show that field-gated exclusion can be used to selectively remove proteins from a mixture, or to selectively trap protein at one exclusion membrane in a series.

  4. An elementary optical gate for expanding entanglement web

    E-Print Network [OSTI]

    Toshiyuki Tashima; Sahin Kaya Ozdemir; Takashi Yamamoto; Masato Koashi; Nobuyuki Imoto

    2008-03-13T23:59:59.000Z

    We introduce an elementary optical gate for expanding polarization entangled W states, in which every pair of photons are entangled alike. The gate is composed of a pair of 50:50 beamsplitters and ancillary photons in the two-photon Fock state. By seeding one of the photons in an $n$-photon W state into this gate, we obtain an $(n+2)$-photon W state after post-selection. This gate gives a better efficiency and a simpler implementation than previous proposals for $\\rm W$-state preparation.

  5. Vehicle Technologies Office Merit Review 2014: GATE Center of...

    Broader source: Energy.gov (indexed) [DOE]

    GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit. lm081vaidya2014o.pdf More Documents & Publications...

  6. GATE Center of Excellence at UAB for Lightweight Materials and...

    Broader source: Energy.gov (indexed) [DOE]

    at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for...

  7. High Temperature, High Voltage Fully Integrated Gate Driver Circuit

    Broader source: Energy.gov (indexed) [DOE]

    temperature gate drive is being developed for use with future wide band gap (silicon carbide and gallium nitride) switching devices. * Universal drive that is capable of driving...

  8. PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational...

    Office of Environmental Management (EM)

    Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate...

  9. GATE Center of Excellence at UAB for Lightweight Materials and...

    Broader source: Energy.gov (indexed) [DOE]

    Constante (PhD candidate) and Samuel Jasper (PhD candidate) working on composite beams GATE courses (some newly developed, some based on tailoring content in existing...

  10. Sandia National Laboratories: ECIS and i-GATE: Innovation Hub...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    support system to accelerate the commercialization of innovative technologies related to green transportation and clean energy. There are now eight i-GATE clients developing fuel...

  11. Gate Fidelities, Quantum Broadcasting, and Assessing Experimental Realization

    E-Print Network [OSTI]

    Hyang-Tag Lim; Young-Sik Ra; Yong-Su Kim; Yoon-Ho Kim; Joonwoo Bae

    2011-06-29T23:59:59.000Z

    We relate gate fidelities of experimentally realized quantum operations to the broadcasting property of their ideal operations, and show that the more parties a given quantum operation can broadcast to, the higher gate fidelities of its experimental realization are in general. This is shown by establishing the correspondence between two operational quantities, quantum state shareability and quantum broadcasting. This suggests that, to assess an experimental realization using gate fidelities, the worst case of realization such as noisy operations should be taken into account and then compared to obtained gate fidelities. In addition, based on the correspondence, we also translate results in quantum state shareability to their counterparts in quantum operations.

  12. Optical Determination of Gate--Tunable Bandgap in Bilayer Graphene

    E-Print Network [OSTI]

    Zhang, Yuanbo

    2010-01-01T23:59:59.000Z

    Tunable Bandgap in Bilayer Graphene Yuanbo Zhang* 1 , Tsung-gate-tunable bandgap in graphene bilayers with magnitude asbands. In two- dimensional graphene bilayers this bandgap

  13. 2012 ARPA-E Energy Innovation Summit: Fireside Chat with Steven Chu and Bill Gates

    ScienceCinema (OSTI)

    Chu, Steven (U.S. Department of Energy Secretary); Gates, Bill (Microsoft, Chairman); Podesta, John (Center for American Progress, Chair and Counselor)

    2012-03-21T23:59:59.000Z

    The third annual ARPA-E Energy Innovation Summit was held in Washington D.C. in February, 2012. The event brought together key players from across the energy ecosystem - researchers, entrepreneurs, investors, corporate executives, and government officials - to share ideas for developing and deploying the next generation of energy technologies. This video captures a session called 'Fireside Chat' that featured Steven Chu, the Secretary of Energy, and Bill Gates, Chairman of Microsoft Corporation. The session is moderated by John Podesta, Chair of the Center for American Progress. Energy Secretary Steven Chu and Microsoft Founder and Chairman Bill Gates exchanged ideas about how small businesses and innovators can overcome the challenges that face many startups.

  14. Cavity-QED-based quantum phase gate

    E-Print Network [OSTI]

    Zubairy, M. Suhail; Kim, M.; Scully, Marlan O.

    2003-01-01T23:59:59.000Z

    are detuned by an amount D from the cavity mode 1, i.e., vbc5n11D . A quantum phase gate with a p phase shift is implemented if the atom in its ground state uc& passes through the cavity such that ~1! the detuning D is equal to g2, and ~2! the interaction...- lowing. The effective Hamiltonian for the interaction, in the di- pole and rotating-wave approximations, is H5H01H1 , ~3! where H05\

  15. Gate-teleportation-based blind quantum computation

    E-Print Network [OSTI]

    Mear M. R. Koochakie

    2014-12-25T23:59:59.000Z

    Blind quantum computation (BQC) is a model in which a computation is performed on a server by a client such that the server is kept blind about the input, the algorithm, and the output of the computation. Here we layout a general framework for BQC which, unlike the previous BQC models, does not constructed on specific computational model. A main ingredient of our construction is gate teleportation. We demonstrate that our framework can be straightforwardly implemented on circuit-based models as well as measurement-based models of quantum computation. We illustrate our construction by showing that universal BQC is possible on correlation-space measurement-based quantum computation models.

  16. David A Gates | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series to UserProduct: CrudeOffice ofINL is aID Service FirstMeetingsA Gates

  17. Optical AND and NOT gates at 40 Gbps using electro-absorption modulator/photodiode pairs.

    SciTech Connect (OSTI)

    Tauke-Pedretti, Anna; Overberg, Mark E.; Skogen, Erik J.; Alford, Charles Fred; Sullivan, Charles Thomas; Vawter, Gregory Allen; Peake, Gregory Merwin; Torres, David L.

    2010-06-01T23:59:59.000Z

    We demonstrate an optical gate architecture using electro-absorption modulator/photodiode pairs to perform AND and NOT functions. Optical bandwidth for both gates reach 40 GHz. Also shown are AND gate waveforms at 40 Gbps.

  18. Modeling gated neutron images of THD capsules

    SciTech Connect (OSTI)

    Wilson, Douglas Carl [Los Alamos National Laboratory; Grim, Gary P [Los Alamos National Laboratory; Tregillis, Ian L [Los Alamos National Laboratory; Wilke, Mark D [Los Alamos National Laboratory; Morgan, George L [Los Alamos National Laboratory; Loomis, Eric N [Los Alamos National Laboratory; Wilde, Carl H [Los Alamos National Laboratory; Oertel, John A [Los Alamos National Laboratory; Fatherley, Valerie E [Los Alamos National Laboratory; Clark, David D [Los Alamos National Laboratory; Schmitt, Mark J [Los Alamos National Laboratory; Merrill, Frank E [Los Alamos National Laboratory; Wang, Tai - Sen F [Los Alamos National Laboratory; Danly, Christopher R [Los Alamos National Laboratory; Batha, Steven H [Los Alamos National Laboratory; Patel, M [LLNL; Sepke, S [LLNL; Hatarik, R [LLNL; Fittinghoff, D [LLNL; Bower, D [LLNL; Marinak, M [LLNL; Munro, D [LLNL; Moran, M [LLNL; Hilko, R [NSTEC; Frank, M [LLNL; Buckles, R [NSTEC

    2010-01-01T23:59:59.000Z

    Time gating a neutron detector 28m from a NIF implosion can produce images at different energies. The brighter image near 14 MeV reflects the size and symmetry of the capsule 'hot spot'. Scattered neutrons, {approx}9.5-13 MeV, reflect the size and symmetry of colder, denser fuel, but with only {approx}1-7% of the neutrons. The gated detector records both the scattered neutron image, and, to a good approximation, an attenuated copy of the primary image left by scintillator decay. By modeling the imaging system the energy band for the scattered neutron image (10-12 MeV) can be chosen, trading off the decayed primary image and the decrease of scattered image brightness with energy. Modeling light decay from EJ399, BC422, BCF99-55, Xylene, DPAC-30, and Liquid A leads to a preference from BCF99-55 for the first NIF detector, but DPAC 30 and Liquid A would be preferred if incorporated into a system. Measurement of the delayed light from the NIF scintillator using implosions at the Omega laser shows BCF99-55 to be a good choice for down-scattered imaging at 28m.

  19. Sizing sliding gate valves for steam service

    SciTech Connect (OSTI)

    Bollinger, R. [Jordan Value, Cincinnati, OH (United States)

    1995-11-06T23:59:59.000Z

    Sliding gate valves have been used in thousands of applications during the past 40 yr. While steam control is a common application for these valves, thy are also used to control other gases and liquids. The sliding gate design provides straight-through flow, which minimizes turbulence, vibration, and noise. Seats are self-cleaning and self-lapping to provide a tight, long-lasting shutoff. A correctly sized valve is essential for accurate control. Valve size should be determined by service and system requirements, not by the size of the existing pipeline. Sizing a valve on the basis of pipeline size usually results in an oversized valve and poor control. Generally, regulator size is smaller than pipe size. Whenever complete information is known (inlet pressure, outlet pressure, or pressure drop, and required flow), determine the valve flow coefficient (C{sub v}) using the equations in ANSI/ISA S75.01 or a flow sizing chart. Tables of values for various types of valves are available from manufacturers. However, when complete system requirements are not known, valve oversizing is prevented by determining the design capacity of piping downstream from the valve. The valve should not be sized to pass more flow than the maximum amount the pipe can handle at a reasonable velocity. An example calculation is given.

  20. A SIMULATION MODEL FOR FLOATING-GATE MOS SYNAPSE TRANSISTORS

    E-Print Network [OSTI]

    Diorio, Chris

    A SIMULATION MODEL FOR FLOATING-GATE MOS SYNAPSE TRANSISTORS Kambiz Rahimi, Chris Diorio, Cecilia, Seattle, Washington ABSTRACT We propose an empirical simulation model for p-channel floating-gate MOS and accurate simulation model for the synaptic devices, many of these circuits were designed using equation

  1. E-Print Network 3.0 - aluminum oxide gate Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2 Charge Trapping Characteristics of SONOS Capacitors with Control Gates of Different Work Functions during ProgramErase Operations Summary: ABSTRACT The control gate...

  2. University of Illinois at Urbana-Champaigns GATE Center for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Urbana-Champaigns GATE Center for Advanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana-Champaigns GATE Center for Advanced Automotive Bio-Fuel...

  3. University of Illinois at Urbana Champaigns GATE Center forAdvanced...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Urbana Champaigns GATE Center forAdvanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana Champaigns GATE Center forAdvanced Automotive Bio-Fuel...

  4. Paying the Toll: A Political History of the Golden Gate Bridge and Highway District, 1923-1971

    E-Print Network [OSTI]

    Dyble, Amy Louise Nelson

    2003-01-01T23:59:59.000Z

    Final Environmental Statement Golden Gate Bridge, HighwayGolden Gate Bridge Highway and Transportation District, Draft Environmental

  5. Dave Kaminsky Thurmond D. Boaz

    E-Print Network [OSTI]

    . Incaprera Mignon W. Jumel Ralph Levin Burton Lindau Jorge I. Martinez-Lopez Thomas L. McNeely Armant C Harold M. Voss 1956 $2,700.00 Robert E. Ball Joseph P. Barreca Quinn H. Becker Ethel H. Boagni R. Luke

  6. Dave Kaminsky Virginia B. Connally

    E-Print Network [OSTI]

    Burton Lindau Jorge I. Martinez-Lopez Thomas L. McNeely Armant C. Touchy Jack S. Zoller 1951 $275. Scott Wilbur G. Wells 1945 $300.00 Harold P. Chastant Paul Finkelstein Lawrence I. Kahn 1946 $100 John C. Passman Felix G. Rabito B. Glenn Smith Charles M. Smith Sallye J. Toniette Harold M. Voss 1956

  7. Optimum performance investigation of LYSO crystal pixels: A comparison between GATE simulation and experimental data

    E-Print Network [OSTI]

    Chen, Ze; Chen, Jin-Da; Zhang, Xiu-Ling; Sun, Zhi-Yu; Huang, Wen-Xue; Wang, Jian-Song; Guo, Zhong-Yan; Xiao, Guo-Qing

    2013-01-01T23:59:59.000Z

    Monte Carlo simulation plays an important role in the study of time of flight (TOF) positron emission tomography (PET) prototype. As it can incorporate accurate physical modeling of scintillation detection process, from scintillation light generation, the transport of scintillation photos through the crystal(s), to the conversion of these photons into electronic signals. The Geant4 based simulation software GATE can provide a user-friendly simulation platform containing the properties needed. In this work, we developed a dedicated module in GATE simulation tool. Using this module, we simulated the light yield, energy resolution, time resolution of LYSO pixels with the same cross-section ($4\\times4 mm^{2}$) of different lengths: 5 mm, 10 mm, 15 mm, 20 mm, 25 mm, coupled to a PMT. The experiments were performed to validate the GATE simulation results. The results indicate that the best time resolution (484.0$\\pm$67.5 ps) and energy resolution (13.3$\\pm$0.4 %) could be produced by using pixel with length of 5 mm...

  8. Optimum performance investigation of LYSO crystal pixels: A comparison between GATE simulation and experimental data

    E-Print Network [OSTI]

    Ze Chen; Zheng-Guo Hu; Jin-Da Chen; Xiu-Ling Zhang; Zhi-Yu Sun; Wen-Xue Huang; Jian-Song Wang; Zhong-Yan Guo; Guo-Qing Xiao

    2013-09-15T23:59:59.000Z

    Monte Carlo simulation plays an important role in the study of time of flight (TOF) positron emission tomography (PET) prototype. As it can incorporate accurate physical modeling of scintillation detection process, from scintillation light generation, the transport of scintillation photos through the crystal(s), to the conversion of these photons into electronic signals. The Geant4 based simulation software GATE can provide a user-friendly simulation platform containing the properties needed. In this work, we developed a dedicated module in GATE simulation tool. Using this module, we simulated the light yield, energy resolution, time resolution of LYSO pixels with the same cross-section ($4\\times4 mm^{2}$) of different lengths: 5 mm, 10 mm, 15 mm, 20 mm, 25 mm, coupled to a PMT. The experiments were performed to validate the GATE simulation results. The results indicate that the best time resolution (484.0$\\pm$67.5 ps) and energy resolution (13.3$\\pm$0.4 %) could be produced by using pixel with length of 5 mm. The module can also be applied to other cases for precisely simulating optical photons propagating in scintillators.

  9. Ballistic Imaging of High-Pressure Fuel Sprays using Incoherent, Ultra- short Pulsed Illumination with an Ultrafast OKE-based Time Gating

    E-Print Network [OSTI]

    Purwar, Harsh; Rozé, Claude; Blaisot, Jean-Bernard

    2015-01-01T23:59:59.000Z

    We present an optical Kerr effect based time-gate with the collinear incidence of the pump and probe beams at the Kerr medium, liquid carbon disulfide, for ballistic imaging of the high-pressure fuel sprays. The probe pulse used to illuminate the object under study is extracted from the supercontinuum generated by tightly focusing intense femtosecond laser pulses inside water, thereby destroying their coherence. The optical imaging spatial resolution and gate timings are investigated and compared with a similar setup without supercontinuum generation, where the probe is still coherent. And finally, a few ballistic images of the fuel sprays using coherent and incoherent illumination with the proposed time-gate are presented and compared qualitatively.

  10. Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks

    SciTech Connect (OSTI)

    Goncharova, L. V.; Dalponte, M.; Gustafsson, T.; Celik, O.; Garfunkel, E.; Lysaght, P. S.; Bersuker, G. [Department of Physics and Astronomy, and Laboratory for Surface Modification, Rutgers University, 136 Frelinghuysen Rd., Piscataway, New Jersey 08854 (United States); Department of Chemistry and Chemical Biology, and Laboratory for Surface Modification, Rutgers University, 610 Taylor Rd., Piscataway, New Jersey 08854 (United States); SEMATECH, 2705 Montopolis Dr., Austin, Texas 78741 (United States)

    2007-03-15T23:59:59.000Z

    The properties of high-{kappa} metal oxide gate stacks are often determined in the final processing steps following dielectric deposition. We report here results from medium energy ion scattering and x-ray photoelectron spectroscopy studies of oxygen and silicon diffusion and interfacial layer reactions in multilayer gate stacks. Our results show that Ti metallization of HfO{sub 2}/SiO{sub 2}/Si stacks reduces the SiO{sub 2} interlayer and (to a more limited extent) the HfO{sub 2} layer. We find that Si atoms initially present in the interfacial SiO{sub 2} layer incorporate into the bottom of the high-{kappa} layer. Some evidence for Ti-Si interdiffusion through the high-{kappa} film in the presence of a Ti gate in the crystalline HfO{sub 2} films is also reported. This diffusion is likely to be related to defects in crystalline HfO{sub 2} films, such as grain boundaries. High-resolution transmission electron microscopy and corresponding electron energy loss spectroscopy scans show aggressive Ti-Si intermixing and oxygen diffusion to the outermost Ti layer, given high enough annealing temperature. Thermodynamic calculations show that the driving forces exist for some of the observed diffusion processes.

  11. Diophantine Generation,

    E-Print Network [OSTI]

    Shlapentokh, Alexandra

    Diophantine Generation, Horizontal and Vertical Problems, and the Weak Vertical Method Alexandra Shlapentokh Diophantine Sets, Definitions and Generation Diophantine Sets Diophantine Generation Properties of Diophantine Generation Diophantine Family of Z Diophantine Family of a Polynomial Ring Going Down Horizontal

  12. An Area Efficien Low Power High Speed S-Box Implementation Using Power-Gated PLA

    E-Print Network [OSTI]

    Ayers, Joseph

    An Area Efficien Low Power High Speed S-Box Implementation Using Power-Gated PLA Ho Joon Lee- sign of Rijndael S-Box for the SubByte transformation using power-gating and PLA design techniques arrays,VLSI General Terms Cryptography, Power Gate, Low Power Keywords AES, PLA, Power Gate, S-Box 1

  13. Parameter Mismatches, Chaos Synchronization and Fast Dynamic Logic Gates

    E-Print Network [OSTI]

    E. M. Shahverdiev

    2009-07-02T23:59:59.000Z

    By using chaos synchronization between non-identical multiple time delay semiconductor lasers with optoelectronic feedbacks, we demonstrate numerically how fast dynamic logic gates can be constructed. The results may be helpful to obtain a computational hardware with reconfigurable properties.

  14. Micro-mechanical logic for field produceable gate arrays

    E-Print Network [OSTI]

    Prakash, Manu

    2005-01-01T23:59:59.000Z

    A paradigm of micro-mechanical gates for field produceable logic is explored. A desktop manufacturing system is sought after which is capable of printing functional logic devices in the field. A logic scheme which induces ...

  15. Single-Step Implementation of Universal Quantum Gates

    SciTech Connect (OSTI)

    Grigorenko, I.A.; Khveshchenko, D.V. [Department of Physics and Astronomy, University of North Carolina, Chapel Hill, North Carolina 27599 (United States)

    2005-09-09T23:59:59.000Z

    We construct optimized implementations of the controlled-NOT and other universal two-qubit gates that, unlike many of the previously proposed protocols, are carried out in a single step. The new protocols require tunable interqubit couplings but, in return, show a significant improvement in the quality of gate operations. We make specific predictions for coupled Josephson junction qubits and compare them with the results of recent experiments.

  16. Rapidly reconfigurable all-optical universal logic gate

    DOE Patents [OSTI]

    Goddard, Lynford L. (Hayward, CA); Bond, Tiziana C. (Livermore, CA); Kallman, Jeffrey S. (Pleasanton, CA)

    2010-09-07T23:59:59.000Z

    A new reconfigurable cascadable all-optical on-chip device is presented. The gate operates by combining the Vernier effect with a novel effect, the gain-index lever, to help shift the dominant lasing mode from a mode where the laser light is output at one facet to a mode where it is output at the other facet. Since the laser remains above threshold, the speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal optical modulation speed of the laser, which can be on the order of up to about tens of GHz. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog optical or electrical signal at the gate selection port. Other all-optical functionality includes wavelength conversion, signal duplication, threshold switching, analog to digital conversion, digital to analog conversion, signal routing, and environment sensing. Since each gate can perform different operations, the functionality of such a cascaded circuit grows exponentially.

  17. Ultrafast gating of proximity-focused microchannel-plate intensifiers

    SciTech Connect (OSTI)

    Lundy, A.S.; Iverson, A.E.

    1982-01-01T23:59:59.000Z

    Proximity-focused, microchannel-plate (MCP) image intensifiers have been used at Los Alamos for many years to allow single frame film and video exposure times in the range of 2.5 to 10 ns. There is now a program to reduce gating times to < 1 ns. This paper reviews previous work and the problems in achieving good resolution with gating times of < 1 ns. The key problems involve applying fast electrical gating signals to the tube elements. We present computer modeling studies of the combined tube, tube connection, and pulser system and show that low photocathode surface resistivity must be obtained to permit fast gating between the photocathode and the MCP input. We discuss ways of making low-resistivity S20 photocathodes, using gallium arsenide photocathodes, and various means of gating the tubes. A variety of pulser designs are being experimentally evaluated including spark gaps, avalanche transistors, Krytron tubes with sharpening gaps, step recovery diodes, and photoconductive elements (PCEs). The results of these studies are presented. Because of the high capacitances involved in most gating schemes, the tube connection geometry must be of low-impedance design, and our solution is presented. Finally, ways of testing these high-speed camera systems are discussed.

  18. Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors

    E-Print Network [OSTI]

    Florida, University of

    energy loss spectroscopy [23]. In contrast, HEMTs utilizing a Pt liner layer did not show the same gate electrical contact to the 2DEG. However, when stressing occurs in O2 or air, the O2 present reacts

  19. The gated community: residents' crime experience and perception of safety behind gates and fences in the urban area

    E-Print Network [OSTI]

    Kim, Suk Kyung

    2006-10-30T23:59:59.000Z

    The primary purpose of the study is to explore the connections between residents' perception of safety and their crime experience, and the existence of gates and fences in multi-family housing communities in urban areas. For cultivating discussions...

  20. 1. Generation 1 1. Generation

    E-Print Network [OSTI]

    Berlin,Technische Universität

    1. Generation 1 _________________________________________________________________________ 1. Generation Sound and vibrations or, in more general terms, oscillations of matter (solids or fluids) are generated in many different dynamic processes. The basic mechanisms which underlie these oscillations

  1. Thyristor stack for pulsed inductive plasma generation

    SciTech Connect (OSTI)

    Teske, C.; Jacoby, J.; Schweizer, W.; Wiechula, J. [Plasmaphysics Group, Institute of Applied Physics, Johann-Wolfgang-Goethe University, 60438 Frankfurt am Main (Germany)

    2009-03-15T23:59:59.000Z

    A thyristor stack for pulsed inductive plasma generation has been developed and tested. The stack design includes a free wheeling diode assembly for current reversal. Triggering of the device is achieved by a high side biased, self supplied gate driver unit using gating energy derived from a local snubber network. The structure guarantees a hard firing gate pulse for the required high dI/dt application. A single fiber optic command is needed to achieve a simultaneous turn on of the thyristors. The stack assembly is used for switching a series resonant circuit with a ringing frequency of 30 kHz. In the prototype pulsed power system described here an inductive discharge has been generated with a pulse duration of 120 {mu}s and a pulse energy of 50 J. A maximum power transfer efficiency of 84% and a peak power of 480 kW inside the discharge were achieved. System tests were performed with a purely inductive load and an inductively generated plasma acting as a load through transformer action at a voltage level of 4.1 kV, a peak current of 5 kA, and a current switching rate of 1 kA/{mu}s.

  2. Method and infrastructure for cycle-reproducible simulation on large scale digital circuits on a coordinated set of field-programmable gate arrays (FPGAs)

    DOE Patents [OSTI]

    Asaad, Sameh W; Bellofatto, Ralph E; Brezzo, Bernard; Haymes, Charles L; Kapur, Mohit; Parker, Benjamin D; Roewer, Thomas; Tierno, Jose A

    2014-01-28T23:59:59.000Z

    A plurality of target field programmable gate arrays are interconnected in accordance with a connection topology and map portions of a target system. A control module is coupled to the plurality of target field programmable gate arrays. A balanced clock distribution network is configured to distribute a reference clock signal, and a balanced reset distribution network is coupled to the control module and configured to distribute a reset signal to the plurality of target field programmable gate arrays. The control module and the balanced reset distribution network are cooperatively configured to initiate and control a simulation of the target system with the plurality of target field programmable gate arrays. A plurality of local clock control state machines reside in the target field programmable gate arrays. The local clock state machines are configured to generate a set of synchronized free-running and stoppable clocks to maintain cycle-accurate and cycle-reproducible execution of the simulation of the target system. A method is also provided.

  3. Efficient Path Delay Test Generation with Boolean Satisfiability

    E-Print Network [OSTI]

    Bian, Kun

    2013-12-10T23:59:59.000Z

    delay test generator CodGen. A mixed structural-functional approach was implemented in CodGen where longest paths were detected using the K Longest Path Per Gate (KLPG) algorithm and path justification and dynamic compaction were handled with the SAT...

  4. Identification of a reversible quantum gate: assessing the resources

    E-Print Network [OSTI]

    Giulio Chiribella; Giacomo Mauro D'Ariano; Martin Roetteler

    2014-09-12T23:59:59.000Z

    We assess the resources needed to identify a reversible quantum gate among a finite set of alternatives, including in our analysis both deterministic and probabilistic strategies. Among the probabilistic strategies we consider unambiguous gate discrimination, where errors are not tolerated but inconclusive outcomes are allowed, and we prove that parallel strategies are sufficient to unambiguously identify the unknown gate with minimum number of queries. This result is used to provide upper and lower bounds on the query complexity and on the minimum ancilla dimension. In addition, we introduce the notion of generalized t-designs, which includes unitary t-designs and group representations as special cases. For gates forming a generalized t-design we give an explicit expression for the maximum probability of correct gate identification and we prove that there is no gap between the performances of deterministic strategies an those of probabilistic strategies. Hence, evaluating of the query complexity of perfect deterministic discrimination is reduced to the easier problem of evaluating the query complexity of unambiguous discrimination. Finally, we consider discrimination strategies where the use of ancillas is forbidden, providing upper bounds on the number of additional queries needed to make up for the lack of entanglement with the ancillas.

  5. A dose point kernel database using GATE Monte Carlo simulation toolkit for nuclear medicine applications: Comparison with other Monte Carlo codes

    SciTech Connect (OSTI)

    Papadimitroulas, Panagiotis; Loudos, George; Nikiforidis, George C.; Kagadis, George C. [Department of Medical Physics, School of Medicine, University of Patras, Rion, GR 265 04 (Greece) and Department of Medical Instruments Technology, Technological Educational institute of Athens, Ag. Spyridonos Street, Egaleo GR 122 10, Athens (Greece); Department of Medical Instruments Technology, Technological Educational institute of Athens, Ag. Spyridonos Street, Egaleo GR 122 10, Athens (Greece); Department of Medical Physics, School of Medicine, University of Patras, Rion, GR 265 04 (Greece)

    2012-08-15T23:59:59.000Z

    Purpose: GATE is a Monte Carlo simulation toolkit based on the Geant4 package, widely used for many medical physics applications, including SPECT and PET image simulation and more recently CT image simulation and patient dosimetry. The purpose of the current study was to calculate dose point kernels (DPKs) using GATE, compare them against reference data, and finally produce a complete dataset of the total DPKs for the most commonly used radionuclides in nuclear medicine. Methods: Patient-specific absorbed dose calculations can be carried out using Monte Carlo simulations. The latest version of GATE extends its applications to Radiotherapy and Dosimetry. Comparison of the proposed method for the generation of DPKs was performed for (a) monoenergetic electron sources, with energies ranging from 10 keV to 10 MeV, (b) beta emitting isotopes, e.g., {sup 177}Lu, {sup 90}Y, and {sup 32}P, and (c) gamma emitting isotopes, e.g., {sup 111}In, {sup 131}I, {sup 125}I, and {sup 99m}Tc. Point isotropic sources were simulated at the center of a sphere phantom, and the absorbed dose was stored in concentric spherical shells around the source. Evaluation was performed with already published studies for different Monte Carlo codes namely MCNP, EGS, FLUKA, ETRAN, GEPTS, and PENELOPE. A complete dataset of total DPKs was generated for water (equivalent to soft tissue), bone, and lung. This dataset takes into account all the major components of radiation interactions for the selected isotopes, including the absorbed dose from emitted electrons, photons, and all secondary particles generated from the electromagnetic interactions. Results: GATE comparison provided reliable results in all cases (monoenergetic electrons, beta emitting isotopes, and photon emitting isotopes). The observed differences between GATE and other codes are less than 10% and comparable to the discrepancies observed among other packages. The produced DPKs are in very good agreement with the already published data, which allowed us to produce a unique DPKs dataset using GATE. The dataset contains the total DPKs for {sup 67}Ga, {sup 68}Ga, {sup 90}Y, {sup 99m}Tc, {sup 111}In, {sup 123}I, {sup 124}I, {sup 125}I, {sup 131}I, {sup 153}Sm, {sup 177}Lu {sup 186}Re, and {sup 188}Re generated in water, bone, and lung. Conclusions: In this study, the authors have checked GATE's reliability for absorbed dose calculation when transporting different kind of particles, which indicates its robustness for dosimetry applications. A novel dataset of DPKs is provided, which can be applied in patient-specific dosimetry using analytical point kernel convolution algorithms.

  6. Self-aligned submicron gate length gallium arsenide MESFET

    E-Print Network [OSTI]

    Huang, Hsien-Ching

    2012-06-07T23:59:59.000Z

    -biaserl saturation currents of 396. 67 + 83. 984 IzA were obtained for the transistors. Built- in voltages of 0. 8198 6 0. 007 V and ideality factors of 1. 456 6 0. 0079 were obtained for the Schottky diodes. The effect of gate length on transcond ictance... Geometrical and physical origins for the small signal equivalent circuit of FET Developed fabrication process for submicron gate length GaAs MESFET Transistor and Schottky diode mask patterns 10 13 15 16 18 19 21 23 23 25 25 32 34 18. Process...

  7. Radiation-damage phenomena in insulated-gate field-effect transistors

    SciTech Connect (OSTI)

    Sune, Chingtzong.

    1990-01-01T23:59:59.000Z

    This study reports on investigation of the electrical influences of ionizing radiation on the characteristics of Insulated Gate Field Effect Transistors. It includes two major parts, i.e., (A) The electrical effects of device characteristics of the defect generated by silicon or oxygen ion implantation has been examined in detail. Surprisingly, large quantities of neutral electron traps (NET) are generated, and only small quantities of fixed positive charge (FPC) is observed. These studies also raise the issue of the correlation between E{sub {gamma}}{prime} centers and FPC. A similar correlation can be made between E{sub {gamma}}{prime} centers and NET since processes that annihilate FPC tend to create fixed negative charge (FNC) from NET, and processes that would tend to generate FPC would tend to create NET from FNC. It was found that silicon or oxygen implanted gate insulators are more susceptible to X-ray radiation than unimplanted devices and that insulator damage due to silicon or oxygen ion implantation is essentially unannealable. (B) A new electron trapping model has been proposed to model experimental data better than is accomplished by existing first-order trapping kinetic approaches. This model includes a continuous decrease of the trapping cross section, {sigma}{sub 0}, as a function of the number of filled traps, N{sub D}. The dependency of {sigma}{sub 0} is believed to be related physically to the annihilation, or buildup of coulombic charge, which repulsive effect has heretofore been neglected in first-order trapping kinetics that describe the entire defect concentration range. It was found that an injection current density dependency of electron trapping at constant total injected charge occurs only when NETs are being filled.

  8. E-Print Network 3.0 - alternative gate dielectric Sample Search...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    poor quality Ge native dielectrics for gate insulator and field... of the optimum ALD HfO on thin Ge oxynitride (GeO N ) gate ... Source: Chui, Chi On - Electrical Engineering...

  9. UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE...

    Energy Savers [EERE]

    UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence Presentation...

  10. Penn State DOE GATE Center of Exellence for In-Vehicle, High...

    Energy Savers [EERE]

    Penn State DOE GATE Center of Exellence for In-Vehicle, High-Power Energy Storage Systems Penn State DOE GATE Center of Exellence for In-Vehicle, High-Power Energy Storage Systems...

  11. Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors

    SciTech Connect (OSTI)

    Tolbert, Leon M [ORNL; Huque, Mohammad A [ORNL; Blalock, Benjamin J [ORNL; Islam, Syed K [ORNL

    2010-01-01T23:59:59.000Z

    Silicon carbide (SiC)-based field effect transistors (FETs) are gaining popularity as switching elements in power electronic circuits designed for high-temperature environments like hybrid electric vehicle, aircraft, well logging, geothermal power generation etc. Like any other power switches, SiC-based power devices also need gate driver circuits to interface them with the logic units. The placement of the gate driver circuit next to the power switch is optimal for minimising system complexity. Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling, can increase the power-to-volume ratio as well as the power-to-weight ratio for power conversion modules such as a DC-DC converter, inverter etc. A silicon-on-insulator (SOI)-based high-voltage, high-temperature integrated circuit (IC) gate driver for SiC power FETs has been designed and fabricated using a commercially available 0.8--m, 2-poly and 3-metal bipolar-complementary metal oxide semiconductor (CMOS)-double diffused metal oxide semiconductor (DMOS) process. The prototype circuit-s maximum gate drive supply can be 40-V with peak 2.3-A sourcing/sinking current driving capability. Owing to the wide driving range, this gate driver IC can be used to drive a wide variety of SiC FET switches (both normally OFF metal oxide semiconductor field effect transistor (MOSFET) and normally ON junction field effect transistor (JFET)). The switching frequency is 20-kHz and the duty cycle can be varied from 0 to 100-. The circuit has been successfully tested with SiC power MOSFETs and JFETs without any heat sink and cooling mechanism. During these tests, SiC switches were kept at room temperature and ambient temperature of the driver circuit was increased to 200-C. The circuit underwent numerous temperature cycles with negligible performance degradation.

  12. Electrical gating effects on the magnetic properties of (Ga,Mn)As diluted magnetic semiconductors

    E-Print Network [OSTI]

    Owen, Man Hon Samuel

    2010-11-16T23:59:59.000Z

    -effect transistor (FET) based on low-doped Ga0.975Mn0.025As was fabricated. It has an in-built n-GaAs back-gate, which, in addition to being a normal gate, enhances the gating effects, especially in the depletion of the epilayer, by decreasing the effective channel...

  13. Compressed sensing quantum process tomography for superconducting quantum gates

    E-Print Network [OSTI]

    Andrey V. Rodionov; Andrzej Veitia; R. Barends; J. Kelly; Daniel Sank; J. Wenner; John M. Martinis; Robert L. Kosut; Alexander N. Korotkov

    2014-07-03T23:59:59.000Z

    We apply the method of compressed sensing (CS) quantum process tomography (QPT) to characterize quantum gates based on superconducting Xmon and phase qubits. Using experimental data for a two-qubit controlled-Z gate, we obtain an estimate for the process matrix $\\chi$ with reasonably high fidelity compared to full QPT, but using a significantly reduced set of initial states and measurement configurations. We show that the CS method still works when the amount of used data is so small that the standard QPT would have an underdetermined system of equations. We also apply the CS method to the analysis of the three-qubit Toffoli gate with numerically added noise, and similarly show that the method works well for a substantially reduced set of data. For the CS calculations we use two different bases in which the process matrix $\\chi$ is approximately sparse, and show that the resulting estimates of the process matrices match each ther with reasonably high fidelity. For both two-qubit and three-qubit gates, we characterize the quantum process by not only its process matrix and fidelity, but also by the corresponding standard deviation, defined via variation of the state fidelity for different initial states.

  14. Quantum phase gate for optical qubits with cavity quantum optomechanics

    E-Print Network [OSTI]

    Muhammad Asjad; Paolo Tombesi; David Vitali

    2015-01-16T23:59:59.000Z

    We show that a cavity optomechanical system formed by a mechanical resonator simultaneously coupled to two modes of an optical cavity can be used for the implementation of quantum phase gate between optical qubits associated with the two intracavity modes. The scheme is realizable for sufficiently strong single-photon optomechanical coupling in the resolved sideband regime, and is robust against cavity losses.

  15. ECG Gated Tomographic reconstruction for 3-D Rotational Coronary Angiography

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    imaging techniques to improve both the safety and the efficacy of coronary angiography interventions the ground for a platform dedicated to the planning and execution of percutaneous coronary inter- ventionsECG Gated Tomographic reconstruction for 3-D Rotational Coronary Angiography Yining HU, Lizhe XIE

  16. An overview of the gate and panel industry

    E-Print Network [OSTI]

    Fisher, C. West

    2000-01-01T23:59:59.000Z

    acquiring raw materials, its pre-fabrication, welding, touch-up, and delivery of the product. My first major responsibility for Texas Gate and Panel was to expand its sales territory. It soon became obvious that a thorough knowledge of my competitors...

  17. Design, Simulation and Modeling of Insulated Gate Bipolar Transistor

    E-Print Network [OSTI]

    Gupta, Kaustubh

    2013-07-09T23:59:59.000Z

    The market for Insulated Gate Bipolar Transistor (IGBT) is growing and there is a need for techniques to improve the design, modeling and simulation of IGBT. In this thesis, we first developed a new method to optimize the layout and dimensions...

  18. Controlling attosecond electron dynamics by phase-stabilized polarization gating

    E-Print Network [OSTI]

    Loss, Daniel

    LETTERS Controlling attosecond electron dynamics by phase-stabilized polarization gating I. J. SOLA the signature of a single return of the electron wavepacket over a large range of energies. This temporally (low energy) and cut-off (high energy) harmonics, specific focusing conditions ensure that only

  19. Optical gating of perylene bisimide fluorescence using dithienylcyclopentene photochromic switches

    SciTech Connect (OSTI)

    Pärs, Martti; Köhler, Jürgen, E-mail: juergen.koehler@uni-bayreuth.de [Experimental Physics IV, University of Bayreuth, 95440 Bayreuth (Germany)] [Experimental Physics IV, University of Bayreuth, 95440 Bayreuth (Germany); Gräf, Katja; Bauer, Peter; Thelakkat, Mukundan [Applied Functional Polymers, University of Bayreuth, 95440 Bayreuth (Germany)] [Applied Functional Polymers, University of Bayreuth, 95440 Bayreuth (Germany)

    2013-11-25T23:59:59.000Z

    The emission of millions of fluorescence photons from a chromophore is controlled by the absorption of a few tens of photons in a photochromic molecule. The parameters that determine the efficiency of this process are investigated, providing insights for the development of an all-optical gate.

  20. Controlling Wild Mobile Robots Using Virtual Gates and Discrete Transitions

    E-Print Network [OSTI]

    LaValle, Steven M.

    Controlling Wild Mobile Robots Using Virtual Gates and Discrete Transitions Leonardo Bobadilla purposely design them to execute wild motions, which means each will strike every open set infinitely often, "wildly behaving" robots that move more-or-less straight until a wall is contacted. They then pick

  1. TECH FORUM: [VERIFIED RTL TO GATES] Efficient RC power grid

    E-Print Network [OSTI]

    Najm, Farid N.

    TECH FORUM: [VERIFIED RTL TO GATES] Efficient RC power grid verification using node elimination proposes a novel approach to systematically reduce the power grid and accurately compute an upper bound on the voltage drops at power grid nodes that are retained. Furthermore, acriterion for the safety of nodes

  2. Distributed Generation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    come a long way in addressing interconnection standards for distributed generation, utilities have largely overlooked the untapped potential of these resources. Under certain...

  3. Short range, ultra-wideband radar with high resolution swept range gate

    DOE Patents [OSTI]

    McEwan, Thomas E. (Livermore, CA)

    1998-05-26T23:59:59.000Z

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control.

  4. Molecular doping for control of gate bias stress in organic thin film transistors

    SciTech Connect (OSTI)

    Hein, Moritz P., E-mail: hein@iapp.de; Lüssem, Björn; Jankowski, Jens; Tietze, Max L.; Riede, Moritz K. [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany)] [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany); Zakhidov, Alexander A. [Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany)] [Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany); Leo, Karl [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany) [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany); Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany)

    2014-01-06T23:59:59.000Z

    The key active devices of future organic electronic circuits are organic thin film transistors (OTFTs). Reliability of OTFTs remains one of the most challenging obstacles to be overcome for broad commercial applications. In particular, bias stress was identified as the key instability under operation for numerous OTFT devices and interfaces. Despite a multitude of experimental observations, a comprehensive mechanism describing this behavior is still missing. Furthermore, controlled methods to overcome these instabilities are so far lacking. Here, we present the approach to control and significantly alleviate the bias stress effect by using molecular doping at low concentrations. For pentacene and silicon oxide as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias stress behavior is explained in terms of the shift of Fermi Level and, thus, exponentially reduced proton generation at the pentacene/oxide interface.

  5. Short range, ultra-wideband radar with high resolution swept range gate

    DOE Patents [OSTI]

    McEwan, T.E.

    1998-05-26T23:59:59.000Z

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control. 14 figs.

  6. Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

    E-Print Network [OSTI]

    D. J. Carrad; A. M. Burke; R. W. Lyttleton; H. J. Joyce; H. H. Tan; C. Jagadish; K. Storm; H. Linke; L. Samuelson; A. P. Micolich

    2014-04-08T23:59:59.000Z

    We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.

  7. A real-time respiration position based passive breath gating equipment for gated radiotherapy: A preclinical evaluation

    SciTech Connect (OSTI)

    Hu Weigang; Xu Anjie; Li Guichao; Zhang Zhen; Housley, Dave; Ye Jinsong [Department of Radiation Oncology, Fudan University Shanghai Cancer Center and Department of Oncology, Shanghai Medical College, Fudan University, Shanghai 200032 (China); Department of Radiation Oncology, Swedish Cancer Institute, Seattle, Washington 98104 (United States)

    2012-03-15T23:59:59.000Z

    Purpose: To develop a passive gating system incorporating with the real-time position management (RPM) system for the gated radiotherapy. Methods: Passive breath gating (PBG) equipment, which consists of a breath-hold valve, a controller mechanism, a mouthpiece kit, and a supporting frame, was designed. A commercial real-time positioning management system was implemented to synchronize the target motion and radiation delivery on a linear accelerator with the patient's breathing cycle. The respiratory related target motion was investigated by using the RPM system for correlating the external markers with the internal target motion while using PBG for passively blocking patient's breathing. Six patients were enrolled in the preclinical feasibility and efficiency study of the PBG system. Results: PBG equipment was designed and fabricated. The PBG can be manually triggered or released to block or unblock patient's breathing. A clinical workflow was outlined to integrate the PBG with the RPM system. After implementing the RPM based PBG system, the breath-hold period can be prolonged to 15-25 s and the treatment delivery efficiency for each field can be improved by 200%-400%. The results from the six patients showed that the diaphragm motion caused by respiration was reduced to less than 3 mm and the position of the diaphragm was reproducible for difference gating periods. Conclusions: A RPM based PBG system was developed and implemented. With the new gating system, the patient's breath-hold time can be extended and a significant improvement in the treatment delivery efficiency can also be achieved.

  8. A Comparison of Amplitude-Based and Phase-Based Positron Emission Tomography Gating Algorithms for Segmentation of Internal Target Volumes of Tumors Subject to Respiratory Motion

    SciTech Connect (OSTI)

    Jani, Shyam S., E-mail: sjani@mednet.ucla.edu [Department of Radiation Oncology, David Geffen School of Medicine, University of California, Los Angeles, California (United States); Robinson, Clifford G. [Department of Radiation Oncology, Siteman Cancer Center, Washington University in St Louis, St Louis, Missouri (United States); Dahlbom, Magnus [Department of Molecular and Medical Pharmacology, David Geffen School of Medicine, University of California, Los Angeles, California (United States); White, Benjamin M.; Thomas, David H.; Gaudio, Sergio; Low, Daniel A.; Lamb, James M. [Department of Radiation Oncology, David Geffen School of Medicine, University of California, Los Angeles, California (United States)

    2013-11-01T23:59:59.000Z

    Purpose: To quantitatively compare the accuracy of tumor volume segmentation in amplitude-based and phase-based respiratory gating algorithms in respiratory-correlated positron emission tomography (PET). Methods and Materials: List-mode fluorodeoxyglucose-PET data was acquired for 10 patients with a total of 12 fluorodeoxyglucose-avid tumors and 9 lymph nodes. Additionally, a phantom experiment was performed in which 4 plastic butyrate spheres with inner diameters ranging from 1 to 4 cm were imaged as they underwent 1-dimensional motion based on 2 measured patient breathing trajectories. PET list-mode data were gated into 8 bins using 2 amplitude-based (equal amplitude bins [A1] and equal counts per bin [A2]) and 2 temporal phase-based gating algorithms. Gated images were segmented using a commercially available gradient-based technique and a fixed 40% threshold of maximum uptake. Internal target volumes (ITVs) were generated by taking the union of all 8 contours per gated image. Segmented phantom ITVs were compared with their respective ground-truth ITVs, defined as the volume subtended by the tumor model positions covering 99% of breathing amplitude. Superior-inferior distances between sphere centroids in the end-inhale and end-exhale phases were also calculated. Results: Tumor ITVs from amplitude-based methods were significantly larger than those from temporal-based techniques (P=.002). For lymph nodes, A2 resulted in ITVs that were significantly larger than either of the temporal-based techniques (P<.0323). A1 produced the largest and most accurate ITVs for spheres with diameters of ?2 cm (P=.002). No significant difference was shown between algorithms in the 1-cm sphere data set. For phantom spheres, amplitude-based methods recovered an average of 9.5% more motion displacement than temporal-based methods under regular breathing conditions and an average of 45.7% more in the presence of baseline drift (P<.001). Conclusions: Target volumes in images generated from amplitude-based gating are larger and more accurate, at levels that are potentially clinically significant, compared with those from temporal phase-based gating.

  9. Presented at the 2003 USSD Annual Lecture, Charleston, South Carolina. April 2003. SPILLWAY GATE RELIABILITY IN THE CONTEXT OF

    E-Print Network [OSTI]

    Bowles, David S.

    and operations are listed and illustrated through their application to the Thames Flood Barrier gates

  10. Thermoelectric Generators 1. Thermoelectric generator

    E-Print Network [OSTI]

    Lee, Ho Sung

    . Cold Hot I - -- - - - - -- Figure 1 Electron concentration in a thermoelectric material. #12;2 A large1 Thermoelectric Generators HoSung Lee 1. Thermoelectric generator 1.1 Basic Equations In 1821 on the direction of current and material [3]. This is called the Thomson effect (or Thomson heat). These three

  11. Improved phase gate reliability in systems with neutral Ising anyons

    E-Print Network [OSTI]

    David J. Clarke; Kirill Shtengel

    2010-09-01T23:59:59.000Z

    Recent proposals using heterostructures of superconducting and either topologically insulating or semiconducting layers have been put forth as possible platforms for topological quantum computation. These systems are predicted to contain Ising anyons and share the feature of having only neutral edge excitations. In this note, we show that these proposals can be combined with the recently proposed "sack geometry" for implementation of a phase gate in order to conduct robust universal quantum computation. In addition, we propose a general method for adjusting edge tunneling rates in such systems, which is necessary for the control of interferometric devices. The error rate for the phase gate in neutral Ising systems is parametrically smaller than for a similar geometry in which the edge modes carry charge: it goes as $T^3$ rather than $T$ at low temperatures. At zero temperature, the phase variance becomes constant at long times rather than carrying a logarithmic divergence.

  12. Photon-photon gates in Bose-Einstein condensates

    E-Print Network [OSTI]

    Arnaud Rispe; Bing He; Christoph Simon

    2010-09-30T23:59:59.000Z

    It has recently been shown that light can be stored in Bose-Einstein condensates for over a second. Here we propose a method for realizing a controlled phase gate between two stored photons. The photons are both stored in the ground state of the effective trapping potential inside the condensate. The collision-induced interaction is enhanced by adiabatically increasing the trapping frequency and by using a Feshbach resonance. A controlled phase shift of $\\pi$ can be achieved in one second.

  13. GATE Center for Automotive Fuel Cell Systems at Virginia Tech

    SciTech Connect (OSTI)

    Douglas Nelson

    2011-05-31T23:59:59.000Z

    The Virginia Tech GATE Center for Automotive Fuel Cell Systems (CAFCS) achieved the following objectives in support of the domestic automotive industry: â?¢ Expanded and updated fuel cell and vehicle technologies education programs; â?¢ Conducted industry directed research in three thrust areas â?? development and characterization of materials for PEM fuel cells; performance and durability modeling for PEM fuel cells; and fuel cell systems design and optimization, including hybrid and plug-in hybrid fuel cell vehicles; â?¢ Developed MS and Ph.D. engineers and scientists who are pursuing careers related to fuel cells and automotive applications; â?¢ Published research results that provide industry with new knowledge which contributes to the advancement of fuel cell and vehicle systems commercialization. With support from the Dept. of Energy, the CAFCS upgraded existing graduate course offerings; introduced a hands-on laboratory component that make use of Virginia Techâ??s comprehensive laboratory facilities, funded 15 GATE Fellowships over a five year period; and expanded our program of industry interaction to improve student awareness of challenges and opportunities in the automotive industry. GATE Center graduate students have a state-of-the-art research experience preparing them for a career to contribute to the advancement fuel cell and vehicle technologies.

  14. Optical Determination of Gate--Tunable Bandgap in Bilayer Graphene

    SciTech Connect (OSTI)

    Zhang, Yuanbo; Tang, Tsung-Ta; Girit, Caglar; Hao, Zhao; Martin, Michael C.; Zettl, Alex; Crommie, Michael F.; Shen, Y. Ron; Wang, Feng

    2009-08-11T23:59:59.000Z

    The electronic bandgap is an intrinsic property of semiconductors and insulators that largely determines their transport and optical properties. As such, it has a central role in modern device physics and technology and governs the operation of semiconductor devices such as p-n junctions, transistors, photodiodes and lasers. A tunable bandgap would be highly desirable because it would allow great flexibility in design and optimization of such devices, in particular if it could be tuned by applying a variable external electric field. However, in conventional materials, the bandgap is fixed by their crystalline structure, preventing such bandgap control. Here we demonstrate the realization of a widely tunable electronic bandgap in electrically gated bilayer graphene. Using a dual-gate bilayer graphene field-effect transistor (FET) and infrared microspectroscopy, we demonstrate a gate-controlled, continuously tunable bandgap of up to 250 meV. Our technique avoids uncontrolled chemical doping and provides direct evidence of a widely tunable bandgap -- spanning a spectral range from zero to mid-infrared -- that has eluded previous attempts. Combined with the remarkable electrical transport properties of such systems, this electrostatic bandgap control suggests novel nanoelectronic and nanophotonic device applications based on graphene.

  15. Fast and reliable automated ventriculography for gated blood-pool studies

    SciTech Connect (OSTI)

    Lima, M.G.

    1984-01-01T23:59:59.000Z

    A set of algorithms, requiring only one single operator-interaction and minimal running time, has been generated to analyze left-ventricular function from cardiac gated Tc-99m Blood-pool Nuclear Medicine scintigrams (CBPS). The process depends mainly on an optimal edge enhancement filter derived in the frequency domain and applied to the study via FFT. The bandpass filter is based on Prolate Spheroidal wave functions and was described by Shanmugam et al in 1979. It maximizes output in the vicinity of edges, and is adapted here to enhance the ventricular region of interest (ROI) yielding images with sharp edges and good signal-to-noise ratio (SNR). This procedure does not require previous background subtraction from initial images in order to adequately define left-ventricular contours. A filter format has been chosen which will allow successful performance of the technique over a wide range of CBPS. The filtered image is then scanned and, on the original frame edges around ROI are marked and counts within ROI are defined. It will automatically run for any allowed number or size of frames. Processing time averages less than one minute when employing an Array Processor for a set of 32 64x64 pixel frames. Nuclear Medicine image processing applications of such filter have not been reported to date. This process has been tested on variable rate, variable ejection fraction, known volume Vanderbilt cardiac phantom; with maximum deviation of 3.5% and estimated standard deviation (SD) of 1.7%. When compared to other processes currently available, this technique is clearly more reliable due to its accuracy, speed and simplicity. It has also been used to determine ventricular volumes from gated SPECT images, with a respectable SD of 2.8%.

  16. Microwave generator

    DOE Patents [OSTI]

    Kwan, T.J.T.; Snell, C.M.

    1987-03-31T23:59:59.000Z

    A microwave generator is provided for generating microwaves substantially from virtual cathode oscillation. Electrons are emitted from a cathode and accelerated to an anode which is spaced apart from the cathode. The anode has an annular slit there through effective to form the virtual cathode. The anode is at least one range thickness relative to electrons reflecting from the virtual cathode. A magnet is provided to produce an optimum magnetic field having the field strength effective to form an annular beam from the emitted electrons in substantial alignment with the annular anode slit. The magnetic field, however, does permit the reflected electrons to axially diverge from the annular beam. The reflected electrons are absorbed by the anode in returning to the real cathode, such that substantially no reflexing electrons occur. The resulting microwaves are produced with a single dominant mode and are substantially monochromatic relative to conventional virtual cathode microwave generators. 6 figs.

  17. Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices

    DOE Patents [OSTI]

    Morse, Jeffrey D. (Martinez, CA); Contolini, Robert J. (Lake Oswego, OR)

    2001-01-01T23:59:59.000Z

    A process for fabricating a nanofilament field emission device in which a via in a dielectric layer is self-aligned to gate metal via structure located on top of the dielectric layer. By the use of a hard mask layer located on top of the gate metal layer, inert to the etch chemistry for the gate metal layer, and in which a via is formed by the pattern from etched nuclear tracks in a trackable material, a via is formed by the hard mask will eliminate any erosion of the gate metal layer during the dielectric via etch. Also, the hard mask layer will protect the gate metal layer while the gate structure is etched back from the edge of the dielectric via, if such is desired. This method provides more tolerance for the electroplating of a nanofilament in the dielectric via and sharpening of the nanofilament.

  18. Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO{sub 2} gate dielectrics

    SciTech Connect (OSTI)

    Samanta, Piyas, E-mail: piyas@vcfw.org [Department of Physics, Vidyasagar College for Women, 39 Sankar Ghosh Lane, Kolkata 700 006 (India); Huang, Heng-Sheng; Chen, Shuang-Yuan [Institute of Mechatronic Engineering, National Taipei University of Technology, No. 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan (China); Liu, Chuan-Hsi [Department of Mechatronic Technology, National Taiwan Normal University, No. 162, Sec. 1, He-Ping E. Rd., Taipei 106, Taiwan (China); Cheng, Li-Wei [Central R and D Division, United Microelectronics Corporation, No. 3, Li-Hsin Rd. II, Hsinchu 300, Taiwan (China)

    2014-02-21T23:59:59.000Z

    We present a detailed investigation on positive-bias temperature stress (PBTS) induced degradation of nitrided hafnium silicate (HfSiON)/SiO{sub 2} gate stack in n{sup +}-poly crystalline silicon (polySi) gate p-type metal-oxide-semiconductor (pMOS) devices. The measurement results indicate that gate dielectric degradation is a composite effect of electron trapping in as-fabricated as well as newly generated neutral traps, resulting a significant amount of stress-induced leakage current and generation of surface states at the Si/SiO{sub 2} interface. Although, a significant amount of interface states are created during PBTS, the threshold voltage (V{sub T}) instability of the HfSiON based pMOS devices is primarily caused by electron trapping and detrapping. It is also shown that PBTS creates both acceptor- and donor-like interface traps via different depassivation mechanisms of the Si{sub 3}???SiH bonds at the Si/SiO{sub 2} interface in pMOS devices. However, the number of donor-like interface traps ?N{sub it}{sup D} is significantly greater than that of acceptor-like interface traps ?N{sup A}{sub it}, resulting the PBTS induced net interface traps as donor-like.

  19. Simple trapped-ion architecture for high-fidelity Toffoli gates

    SciTech Connect (OSTI)

    Borrelli, Massimo [CM-DTC, SUPA, EPS/School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom); Mazzola, Laura [Turku Centre for Quantum Physics, Department of Physics and Astronomy, University of Turku, FI-20014 Turun yliopisto (Finland); School of Mathematics and Physics, Queen's University, BT7 1NN Belfast (United Kingdom); Paternostro, Mauro [School of Mathematics and Physics, Queen's University, BT7 1NN Belfast (United Kingdom); Maniscalco, Sabrina [CM-DTC, SUPA, EPS/School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom); Turku Centre for Quantum Physics, Department of Physics and Astronomy, University of Turku, FI-20014 Turun yliopisto (Finland)

    2011-07-15T23:59:59.000Z

    We discuss a simple architecture for a quantum toffoli gate implemented using three trapped ions. The gate, which, in principle, can be implemented with a single laser-induced operation, is effective under rather general conditions and is strikingly robust (within any experimentally realistic range of values) against dephasing, heating, and random fluctuations of the Hamiltonian parameters. We provide a full characterization of the unitary and noise-affected gate using three-qubit quantum process tomography.

  20. Bill Gates and Deputy Secretary Poneman Discuss the Energy Technology Landscape

    Broader source: Energy.gov [DOE]

    Bill Gates and Deputy Secretary of Energy Daniel Poneman discuss the future of energy technology during the twenty-second Plenary Meeting of the Nuclear Suppliers Group.

  1. Rapid optimization of working parameters of microwave-driven multilevel qubits for minimal gate leakage

    E-Print Network [OSTI]

    Zhou, Zhongyuan; Han, Siyuan; Chu, Shih-I

    2005-09-16T23:59:59.000Z

    .0134 is the interaction between the qubits, .0020 .0136 M=L is the coupling constant, and x i , x ei , and h.0133x i .0134 (i .0136 1 and 2) are the canonical coordinate, normal- ized external flux, and Hamiltonian of the ith single qubit. Note... for the gate at the point B. The quality of a gate can be described by gate fidelity F .0017 Trace.0137.0026 P .0026 I .0138, where .0026 P and.0026 I are the physical and ideal density matrices after gate operation and the overline denotes averaging over all...

  2. Error Compensation of Single-Qubit Gates in a Surface Electrode Ion Trap Using Composite Pulses

    E-Print Network [OSTI]

    Emily Mount; Chingiz Kabytayev; Stephen Crain; Robin Harper; So-Young Baek; Geert Vrijsen; Steven Flammia; Kenneth R. Brown; Peter Maunz; Jungsang Kim

    2015-04-06T23:59:59.000Z

    The trapped atomic ion qubits feature desirable properties for use in a quantum computer such as long coherence times (Langer et al., 2005), high qubit measurement fidelity (Noek et al., 2013), and universal logic gates (Home et al., 2009). The quality of quantum logic gate operations on trapped ion qubits has been limited by the stability of the control fields at the ion location used to implement the gate operations. For this reason, the logic gates utilizing microwave fields (Brown et al., 2011; Shappert et al., 2013; Harty et al., 2014) have shown gate fidelities several orders of magnitude better than those using laser fields (Knill et al., 2008; Benhelm et al., 2008; Ballance et al., 2014). Here, we demonstrate low-error single-qubit gates performed using stimulated Raman transitions on an ion qubit trapped in a microfabricated chip trap. Gate errors are measured using a randomized benchmarking protocol (Knill et al., 2008; Wallman et al., 2014; Magesan et al., 2012), where amplitude error in the control beam is compensated using various pulse sequence techniques (Wimperis, 1994; Low et al., 2014). Using B2 compensation (Wimperis, 1994), we demonstrate single qubit gates with an average error per randomized Clifford group gate of $3.6(3)\\times10^{-4}$. We also show that compact palindromic pulse compensation sequences (PD$n$) (Low et al., 2014) compensate for amplitude errors as designed.

  3. 2006-2010 GATE program at Ohio State University Center for Automotive...

    Broader source: Energy.gov (indexed) [DOE]

    DOE Office of Vehicle Technologies "Mega" Merit Review 2008 on February 25, 2008 in Bethesda, Maryland. merit08guezennec.pdf More Documents & Publications GATE: Energy Efficient...

  4. Alternative Gate Dielectrics on Semiconductors for MOSFET Device Applications

    SciTech Connect (OSTI)

    Norton, D.P.; Budai, J.D.; Chisholm, M.F.; Pennycook, S.J.; McKee, R.; Walker, F.; Lee, Y.; Park, C.

    1999-12-06T23:59:59.000Z

    We have investigated the synthesis and properties of deposited oxides on Si and Ge for use as alternative gate dielectrics in MOSFET applications. The capacitance and leakage current behavior of polycrystalline Y{sub 2}O{sub 3} films synthesized by pulsed-laser deposition is reported. In addition, we also discuss the growth of epitaxial oxide structures. In particular, we have investigated the use of silicide termination for oxide growth on (001) Si using laser-molecular beam epitaxy. In addition, we discuss a novel approach involving the use of hydrogen to eliminate native oxide during initial dielectric oxide nucleation on (001) Ge.

  5. Three-qubit phase gate based on cavity quantum electrodynamics

    E-Print Network [OSTI]

    Chang, Jun-Tao; Zubairy, M. Suhail

    2008-01-01T23:59:59.000Z

    - mentation, such as linear ion traps #4;1#5;, liquid-state nuclear magnetic resonance #1;NMR#2; #4;2#5;, and cavity QED systems #4;3,4#5;. There are three requirements for implementing a quantum computer: Efficient manipulation and read out of an indi.... #4;6#5;, a scheme to implement a two-qubit quantum phase gate and one-qubit unitary operation implementation based on cavity QED was described. They choose the Fock states #6;0#7; and #6;1#7; of a high Q cavity mode as the two logical states of a...

  6. Gate Hours & Services | Stanford Synchrotron Radiation Lightsource

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickr Flickr Editor'sshort version) Thelong version)shortGate Hours &

  7. Generation Technologies

    E-Print Network [OSTI]

    Green Power

    2005-01-01T23:59:59.000Z

    Many local governments are using green power in their facilities and providing assistance to local businesses and residents to do the same. Green power is a subset of renewable energy that is produced with no GHG emissions, typically from solar, wind, geothermal, biogas, biomass, or low-impact small hydroelectric sources, includes three types of products: utility products (i.e., green power purchased from the utility through the electricity grid), renewable energy certificates (RECs), and on-site generation. Opportunities to purchase these products are increasing significantly, with annual green power market growth rates

  8. Coherent molecular transistor: Control through variation of the gate wave function

    SciTech Connect (OSTI)

    Ernzerhof, Matthias, E-mail: Matthias.Ernzerhof@UMontreal.ca [Département de Chimie, Université de Montréal, C.P. 6128 Succursale A, Montréal, Quebec H3C 3J7 (Canada)] [Département de Chimie, Université de Montréal, C.P. 6128 Succursale A, Montréal, Quebec H3C 3J7 (Canada)

    2014-03-21T23:59:59.000Z

    In quantum interference transistors (QUITs), the current through the device is controlled by variation of the gate component of the wave function that interferes with the wave function component joining the source and the sink. Initially, mesoscopic QUITs have been studied and more recently, QUITs at the molecular scale have been proposed and implemented. Typically, in these devices the gate lead is subjected to externally adjustable physical parameters that permit interference control through modifications of the gate wave function. Here, we present an alternative model of a molecular QUIT in which the gate wave function is directly considered as a variable and the transistor operation is discussed in terms of this variable. This implies that we specify the gate current as well as the phase of the gate wave function component and calculate the resulting current through the source-sink channel. Thus, we extend on prior works that focus on the phase of the gate wave function component as a control parameter while having zero or certain discrete values of the current. We address a large class of systems, including finite graphene flakes, and obtain analytic solutions for how the gate wave function controls the transistor.

  9. Gate Reliability Assessment for a Spillway Upgrade Design in Queensland, Australia USSD 2006 Conference Page 1

    E-Print Network [OSTI]

    Bowles, David S.

    Gate Reliability Assessment for a Spillway Upgrade Design in Queensland, Australia USSD 2006 Conference Page 1 RELIABILITY ASSESSMENT FOR A SPILLWAY GATE UPGRADE DESIGN IN QUEENSLAND, AUSTRALIA Malcolm of reliability analysis, and how the results influenced the spillway system design and overall risk evaluation

  10. Controlling the Performance of a Three-Terminal Molecular Transistor: Conformational versus Conventional Gating

    E-Print Network [OSTI]

    Pandey, Ravi

    University, Houghton, Michigan 49931, United States Shashi P. Karna* U.S. Army Research Laboratory, Weapons *S Supporting Information ABSTRACT: The effect of conformational changes in the gate arm of a three of the gate field. The current modulation is found to reach its maximum only under exclusive effect of voltage

  11. Ambipolar silicon nanowire FETs with stenciled-deposited metal gate Davide Sacchetto

    E-Print Network [OSTI]

    De Micheli, Giovanni

    Ambipolar silicon nanowire FETs with stenciled-deposited metal gate Davide Sacchetto , Veronica Keywords: Schottky barrier Ambipolarity Si nanowire Stencil lithography FET Silicide a b s t r a c t We chemical vapor deposition (LPCVD) of amorphous Si (a-Si) and SiO2 layers as well as metal gate patterning

  12. Surface application of molybdenum silicide onto gated poly-Si emitters for enhanced field emission performance

    E-Print Network [OSTI]

    Lee, Jong Duk

    the merits of molybdenum Mo silicide formation on gated polycrystalline silicon poly-Si field emitters. Metal, any metal silicide can be adopted without reSurface application of molybdenum silicide onto gated poly-Si emitters for enhanced field emission

  13. Probabilistic quantum gates between remote atoms through interference of optical frequency qubits

    E-Print Network [OSTI]

    Madsen, Martin John

    Probabilistic quantum gates between remote atoms through interference of optical frequency qubits L gates on remote trapped atom qubits through interference of optical frequency qubits. The method does be localized well under the Lamb-Dicke limit through laser cooling in a strong trap, the elimination

  14. Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films

    E-Print Network [OSTI]

    Lin, Chen-Han

    2012-10-19T23:59:59.000Z

    nanoparticles. These results can be important to the novel metal gate/high-k/Si MOS structure. The Ru-modified ZrHfO gate dielectric film showed a large breakdown voltage and a long lifetime. The conventional polycrystalline Si (poly-Si) charge trapping layer...

  15. Directions to USC, Gate 6 (Parking Structure A) 110 (Harbor Freeway) North

    E-Print Network [OSTI]

    Valero-Cuevas, Francisco

    on Vermont Avenue Turn right at 36th Place/Downey Way and enter USC at Gate 6 5 (Golden State/Santa AnaDirections to USC, Gate 6 (Parking Structure A) 110 (Harbor Freeway) North Take the Exposition Boulevard exit Go straight through the 37th Street light. Keep left Go under the freeway bridge and across

  16. Electrochemical gating of individual single-wall carbon nanotubes observed by electron transport measurements and resonant

    E-Print Network [OSTI]

    , the Fermi energy of a nanotube can be changed, as ions from the solution accu- mulate on the surface gating of nanotubes has been shown previously to effectively shift the Fermi energy of semiconducting with the laser energy, we can observe the Raman spectrum from a single SWNT.7 Electrochemical gating of nanotubes

  17. New Silicon Carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET)

    E-Print Network [OSTI]

    Kumar, M. Jagadesh

    New Silicon Carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET) without PN. In this paper, we propose a novel Schottky-gate BMFET (SBMFET) using P- type 4H Silicon-Carbide 13,41, a wide, Silicon Carbide, Field effect transistor, Simulation. I. INTRODUCTION TH E BMFET operates in bipolar mode

  18. Optimal Control of Airport Operations with Gate Capacity Constraints Harshad Khadilkar and Hamsa Balakrishnan

    E-Print Network [OSTI]

    Gummadi, Ramakrishna

    at Boston's Logan International Airport in the US are used to illustrate the advantages of the proposed for Boston Logan International Airport (BOS) is shown in Fig. 1. Gates at each of the four main terminalsOptimal Control of Airport Operations with Gate Capacity Constraints Harshad Khadilkar and Hamsa

  19. Classification : Original Article VOLTAGE-GATED SODIUM CHANNELS POTENTIATE THE INVASIVE

    E-Print Network [OSTI]

    Boyer, Edmond

    - gated sodium channels in non-small-cell lung cancer cell lines. Functional voltage-gated sodium channels cancerous cell lines H23, H460 and Calu-1 possess functional sodium channels while normal and weakly metastatic cell lines do not. While all the cell lines expressed mRNA for numerous sodium channel isoforms

  20. Microfluidic logic gates and timers{ Michael W. Toepke, Vinay V. Abhyankar and David J. Beebe*

    E-Print Network [OSTI]

    Beebe, David J.

    Microfluidic logic gates and timers{ Michael W. Toepke, Vinay V. Abhyankar and David J. Beebe to create a number of microfluidic analogs to electronic circuit components. Three classes of components are demonstrated: (1) OR/AND, NOR/NAND, and XNOR digital microfluidic logic gates; (2) programmable, autonomous

  1. Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1

    E-Print Network [OSTI]

    Shepard, Kenneth

    Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1 , Cory Dean1, 10027 Tel: (212) 854-2529, Fax: (212) 932-9421, Email: shepard@ee.columbia.edu Abstract Graphene field of graphene, as the gate dielectric. The devices ex- hibit mobility values exceeding 10,000 cm2 /V

  2. Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chip

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate transformer integrated in a CMOS silicon die together with the gate driver and other required functions frequency through the coreless transformer. The chosen design methodology will be explained and experimental

  3. Analytical approach to swift non-leaky entangling gates in superconducting qubits

    E-Print Network [OSTI]

    Sophia E. Economou; Edwin Barnes

    2014-11-03T23:59:59.000Z

    We develop schemes for designing pulses that implement fast and precise entangling quantum gates in superconducting qubit systems despite the presence of nearby harmful transitions. Our approach is based on purposely involving the nearest harmful transition in the quantum evolution instead of trying to avoid it. Using analytical tools, we design simple microwave control fields that implement maximally entangling gates with fidelities exceeding 99% in times as low as 40 ns. We demonstrate our approach in a two-qubit circuit QED system by designing the two most important quantum entangling gates: a conditional-NOT gate and a conditional-Z gate. Our results constitute an important step toward overcoming the problem of spectral crowding, one of the primary challenges in controlling multi-qubit systems.

  4. Experimental Estimation of Average Fidelity of a Clifford Gate on a 7-qubit Quantum Processor

    E-Print Network [OSTI]

    Dawei Lu; Hang Li; Denis-Alexandre Trottier; Jun Li; Aharon Brodutch; Anthony P. Krismanich; Ahmad Ghavami; Gary I. Dmitrienko; Guilu Long; Jonathan Baugh; Raymond Laflamme

    2014-11-28T23:59:59.000Z

    Quantum gates in experiment are inherently prone to errors that need to be characterized before they can be corrected. Full characterization via quantum process tomography is impractical and often unnecessary. For most practical purposes, it is enough to estimate more general quantities such as the average fidelity. Here we use a unitary 2-design and twirling protocol for efficiently estimating the average fidelity of Clifford gates, to certify a 7-qubit entangling gate in a nuclear magnetic resonance quantum processor. Compared with more than $10^8$ experiments required by full process tomography, we conducted 1656 experiments to satisfy a statistical confidence level of 99%. The average fidelity of this Clifford gate in experiment is 55.1%, and rises to 87.5% if the infidelity due to decoherence is removed. The entire protocol of certifying Clifford gates is efficient and scalable, and can easily be extended to any general quantum information processor with minor modifications.

  5. DAVE MCBEAIN Senior Director, Innovation & Technical Excellence

    E-Print Network [OSTI]

    Minnesota, University of

    as the Senior Project Manager for Solvay Animal Health. In 1995 he joined Malt-O-Meal (MOM, as employees

  6. SKELL, Specifically Dave Clarke and Andres Loh

    E-Print Network [OSTI]

    Löh, Andres

    = Unit gmap{|:+:|} gmapA gmapB (Inl a) = Inl (gmapA a) gmap{|:+:|} gmapA gmapB (Inr b) = Inr (gmapB b gmap Sum :: a b c d . (a c) (b d) a:+:b c:+:d case gmap Sum gmapA gmapB (Inl a) = Inl (gmapA a = Inl a | Inr b data a :*: b = a :*: b data Unit = Unit data Con a = Con a data Label a = Label

  7. A CAD tool for the power estimation of CMOS, BiCMOS and BiNMOS gates

    E-Print Network [OSTI]

    Islam, Kazi Inamul

    1995-01-01T23:59:59.000Z

    This thesis describes a CAD tool for the power estimation of CMOS, BiCMOS and BiNMOS gates. Using analytical models for the transient behavior of the gates, accurate estimates of the power dissipated by each type of gate during a typical transition...

  8. New insights into self-heating in double-gate transistors by solving Boltzmann transport equations

    SciTech Connect (OSTI)

    Thu Trang Nghiêm, T., E-mail: tthutrang.nghiem@gmail.com [Institute of Fundamental Electronics, UMR 8622, CNRS-University of Paris-Sud, Orsay (France); The Center for Thermal Sciences of Lyon, UMR 5008, CNRS–INSA–University of Lyon 1, Villeurbanne (France); Saint-Martin, J.; Dollfus, P. [Institute of Fundamental Electronics, UMR 8622, CNRS-University of Paris-Sud, Orsay (France)

    2014-08-21T23:59:59.000Z

    Electro-thermal effects become one of the most critical issues for continuing the downscaling of electron devices. To study this problem, a new efficient self-consistent electron-phonon transport model has been developed. Our model of phonon Boltzmann transport equation (pBTE) includes the decay of optical phonons into acoustic modes and a generation term given by electron-Monte Carlo simulation. The solution of pBTE uses an analytic phonon dispersion and the relaxation time approximation for acoustic and optical phonons. This coupled simulation is applied to investigate the self-heating effects in a 20?nm-long double gate MOSFET. The temperature profile per mode and the comparison between Fourier temperature and the effective temperature are discussed. Some significant differences occur mainly in the hot spot region. It is shown that under the influence of self-heating effects, the potential profile is modified and both the drain current and the electron ballisticity are reduced because of enhanced electron-phonon scattering rates.

  9. After-gate attack on a quantum cryptosystem

    E-Print Network [OSTI]

    Carlos Wiechers; Lars Lydersen; Christoffer Wittmann; Dominique Elser; Johannes Skaar; Christoph Marquardt; Vadim Makarov; Gerd Leuchs

    2010-09-14T23:59:59.000Z

    We present a method to control the detection events in quantum key distribution systems that use gated single-photon detectors. We employ bright pulses as faked states, timed to arrive at the avalanche photodiodes outside the activation time. The attack can remain unnoticed, since the faked states do not increase the error rate per se. This allows for an intercept-resend attack, where an eavesdropper transfers her detection events to the legitimate receiver without causing any errors. As a side effect, afterpulses, originating from accumulated charge carriers in the detectors, increase the error rate. We have experimentally tested detectors of the system id3110 (Clavis2) from ID Quantique. We identify the parameter regime in which the attack is feasible despite the side effect. Furthermore, we outline how simple modifications in the implementation can make the device immune to this attack.

  10. Electrically-gated near-field radiative thermal transistor

    E-Print Network [OSTI]

    Yang, Yue

    2015-01-01T23:59:59.000Z

    In this work, we propose a near-field radiative thermal transistor made of two graphene-covered silicon carbide (SiC) plates separated by a nanometer vacuum gap. Thick SiC plates serve as the thermal "source" and "drain", while graphene sheets function as the "gate" to modulate the near-field photon tunneling by tuning chemical potential with applied voltage biases symmetrically or asymmetrically. The radiative heat flux calculated from fluctuational electrodynamics significantly varies with graphene chemical potentials, which can tune the coupling between graphene plasmon across the vacuum gap. Thermal modulation, switching, and amplification, which are the key features required for a thermal transistor, are theoretically realized and analyzed. This work will pave the way to active thermal management, thermal circuits, and thermal computing.

  11. Gas-controlled dynamic vacuum insulation with gas gate

    DOE Patents [OSTI]

    Benson, D.K.; Potter, T.F.

    1994-06-07T23:59:59.000Z

    Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber. 25 figs.

  12. Gas-controlled dynamic vacuum insulation with gas gate

    DOE Patents [OSTI]

    Benson, David K. (Golden, CO); Potter, Thomas F. (Denver, CO)

    1994-06-07T23:59:59.000Z

    Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber.

  13. Thermoelectric generator

    SciTech Connect (OSTI)

    Shakun, W.; Bearden, J.H.; Henderson, D.R.

    1988-03-29T23:59:59.000Z

    A thermoelectric generator unit is described comprising: a hot side heat exchanger including a plate having extruded retention posts projecting from one surface of the plate, and fins adapted for contact with a heating source. The fins are positioned between two of the retention posts. Retention rods are inserted between the retention posts and the base of the fins to retain the fin in thermal contact with the plate surface upon insertion of the retention rod between the engaging surface of the post and the corresponding fin. Thermoelectric semi-conductor modules are in thermal contact with the opposite side of the hot side heat exchanger plate from the contact with the fins. The modules are arranged in a grid pattern so that heat flow is directed into each of the modules from the hot side heat exchanger. The modules are connected electrically so as to combine their electrical output; and a cold side heat exchanger is in thermal contact with the modules acting as a heat sink on the opposite side of the module from the hot side heat exchanger plate so as to produce a thermal gradient across the modules.

  14. Introduction Minimal generation

    E-Print Network [OSTI]

    St Andrews, University of

    Introduction Minimal generation Random generation Minimal and probabilistic generation of finite generation of finite groups #12;Introduction Minimal generation Random generation Some motivation Let x1 random elements of G = x1, . . . , xk . (G is the group generated by x1, . . . , xk : all possible

  15. Demonstration of a fully tuneable entangling gate for continuous-variable one-way quantum computation

    E-Print Network [OSTI]

    Shota Yokoyama; Ryuji Ukai; Seiji C. Armstrong; Jun-ichi Yoshikawa; Peter van Loock; Akira Furusawa

    2014-10-02T23:59:59.000Z

    We introduce a fully tuneable entangling gate for continuous-variable one-way quantum computation. We present a proof-of-principle demonstration by propagating two independent optical inputs through a three-mode linear cluster state and applying the gate in various regimes. The genuine quantum nature of the gate is confirmed by verifying the entanglement strength in the output state. Our protocol can be readily incorporated into efficient multi-mode interaction operations in the context of large-scale one-way quantum computation, as our tuning process is the generalisation of cluster state shaping.

  16. Stripline microchannel plate image intensifier tubes (MCPTS) for nanosecond optical gating applications

    SciTech Connect (OSTI)

    Yates, G.J.; Jaramillo, S.A.; Zagarino, P.; Thomas, M.

    1986-01-01T23:59:59.000Z

    Shuttering characteristics of low impedance stripline geometry microchannel plate image intensifier tubes (MCPTs) with 50% transmissive nickel undercoated S-20 photocathodes are discussed. Iris-free shutter sequences with 50 to 75 micron resolution at optical gate times of 500ps to 2ns were measured for typical samples from two manufacturers. Shutter sequences clearly showing gate pulse propagation velocities for this MCPT design when externally driven by impedance matched circuitry are contrasted with non-directional sequences obtained from unmatched coupling of the gate pulse. 7 refs., 7 figs.

  17. Gates controlled parallel-coupled double quantum dot on both single layer and bilayer graphene

    E-Print Network [OSTI]

    Lin-Jun Wang; Guo-Ping Guo; Da Wei; Gang Cao; Tao Tu; Ming Xiao; Guang-Can Guo; A. M. Chang

    2011-04-22T23:59:59.000Z

    Here we report the fabrication and quantum transport measurements of gates controlled parallel-coupled double quantum dot on both bilayer and single layer graphene. It is shown that the interdot coupling strength of the parallel double dots can be effectively tuned from weak to strong regime by both the in-plane plunger gates and back gate. All the relevant energy scales and parameters of the graphene parallel-coupled double dot can be extracted from the honeycomb charge stability diagrams revealed through the transport measurements.

  18. SRP4760R List of Lots By Purchaser As at :-13-feb-2013:08:07 CENTRAL ENGLAND (Wharncliffe Plank Gate)

    E-Print Network [OSTI]

    ENGLAND (Wharncliffe Plank Gate) CENTRAL ENGLAND (Coach Road) NORTH ENGLAND (Guns Crag (Redesdale)) NORTH

  19. A linear programming solution to the gate assignment problem at airport terminals

    E-Print Network [OSTI]

    Mangoubi, Rami

    1980-01-01T23:59:59.000Z

    This research solves the flight-to-gate assignment problem at airports in such a way as to minimize, or at least reduce, walking distances for passengers inside terminals. Two solution methods are suggested. The first is ...

  20. E-Print Network 3.0 - arbitrary phase gates Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    << < 1 2 3 4 5 > >> Page: << < 1 2 3 4 5 > >> 41 Optical simulation of quantum logic N. J. Cerf,1 Summary: of universal quantum gates using simple optical components beam...

  1. The civic forum in ancient Israel : the form, function, and symbolism of city gates

    E-Print Network [OSTI]

    Frese, Daniel Allan

    2012-01-01T23:59:59.000Z

    of City Gates by Daniel Allan Frese Doctor of Philosophy inC. Michael Hall, and Allan M. Williams. Oxford: Blackwell,in History by Daniel Allan Frese Committee in Charge:

  2. All-Optical Switch and Transistor Gated by One Stored Photon

    E-Print Network [OSTI]

    Chen, Wenlan

    The realization of an all-optical transistor, in which one “gate” photon controls a “source” light beam, is a long-standing goal in optics. By stopping a light pulse in an atomic ensemble contained inside an optical ...

  3. E-Print Network 3.0 - affects voltage-gated calcium Sample Search...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    , 1115-1118 3 Dolphin, A.C. (2003) b subunits of voltage-gated calcium channels. J. Bioenerg. Biomembr... . 35, 599-620 4 Van Petegem, F. et al. (2004) Structure of a complex...

  4. Thermosensitive gating effect and selective gas adsorption in a porous coordination nanocage

    SciTech Connect (OSTI)

    Zhao, Dan; Yuan, Daqiang; Krishna, Rajamani; van Baten, Jasper M.; Zhou, Hong-Cai (TAM); (U. Amsterdam)

    2010-10-22T23:59:59.000Z

    A porous coordination nanocage functionalized with 24 triisopropylsilyl groups exhibits a remarkable thermosensitive gate opening phenomenon and demonstrates a molecular sieving effect at a certain temperature range, which can be used for gas separation purposes.

  5. Thermosensitive gating effect and selective gas adsorption in a porous coordination nanocage

    SciTech Connect (OSTI)

    Zhao, Dan; Yuan, Daqiang; Krishna, Rajamani; van Baten, Jasper M; Zhou, Hong-Cai

    2010-01-01T23:59:59.000Z

    A porous coordination nanocage functionalized with 24 triisopropylsilyl groups exhibits a remarkable thermosensitive gate opening phenomenon and demonstrates a molecular sieving effect at a certain temperature range, which can be used for gas separation purposes.

  6. Process fidelity estimation of linear optical quantum CZ gate: A comparative study

    E-Print Network [OSTI]

    M. Micuda; M. Sedlak; I. Straka; M. Mikova; M. Dusek; M. Jezek; J. Fiurasek

    2014-03-19T23:59:59.000Z

    We present a systematic comparison of different methods of fidelity estimation of a linear optical quantum controlled-Z gate implemented by two-photon interference on a partially polarizing beam splitter. We have utilized a linear fidelity estimator based on the Monte Carlo sampling technique as well as a non-linear estimator based on maximum likelihood reconstruction of a full quantum process matrix. In addition, we have also evaluated lower bound on quantum gate fidelity determined by average quantum state fidelities for two mutually unbiased bases. In order to probe various regimes of operation of the gate we have introduced a tunable delay line between the two photons. This allowed us to move from high-fidelity operation to a regime where the photons become distinguishable and the success probability of the scheme significantly depends on input state. We discuss in detail possible systematic effects that could influence the gate fidelity estimation.

  7. Ligand-Gated Chloride Channels Are Receptors for Biogenic Amines in C. elegans

    E-Print Network [OSTI]

    Ringstad, Niels

    Biogenic amines such as serotonin and dopamine are intercellular signaling molecules that function widely as neurotransmitters and neuromodulators. We have identified in the nematode Caenorhabditis elegans three ligand-gated ...

  8. Transient Turbulent Flow Simulation with Water Model Validation and Application to Slide Gate Dithering

    E-Print Network [OSTI]

    Thomas, Brian G.

    ) 244-6534 Email: bgthomas@illinois.edu Bruce Forman and Hongbin Yin ArcelorMittal Global R&D East) 399-3899 Email: bruce.forman@arcelormittal.com, Hongbin.Yin@arcelormittal.com ABSTRACT Slide gate

  9. pH sensing properties of graphene solution-gated field-effect transistors

    E-Print Network [OSTI]

    Mailly-Giacchetti, Benjamin

    2013-01-01T23:59:59.000Z

    The use of graphene grown by chemical vapor deposition to fabricate solution-gated field-effect transistors (SGFET) on different substrates is reported. SGFETs were fabricated using graphene transferred on poly(ethylene ...

  10. Vehicle Technologies Office Merit Review 2014: GATE: Energy Efficient Vehicles for Sustainable Mobility

    Broader source: Energy.gov [DOE]

    Presentation given by Ohio State University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE: energy efficient...

  11. Vehicle Technologies Office Merit Review 2014: DOE GATE Center of Excellence in Sustainable Vehicle Systems

    Broader source: Energy.gov [DOE]

    Presentation given by Clemson University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about DOE GATE Center of...

  12. Optimized Generation of Data-path from C Codes for FPGAs Zhi Guo Betul Buyukkurt Walid Najjar

    E-Print Network [OSTI]

    Najjar, Walid A.

    on FPGAs, more specifically on CSoCs. It generates RTL level HDLs from frequently executing kernels System- on-a-Chip (CSoC), which has one or more microprocessors integrated with a field-programmable gate in the way of wider acceptance of CSoC platforms is their programmability. Application developers must have

  13. AN AUTOZEROING FLOATING-GATE BANDPASS FILTER Paul Hasler, Bradley A. Minch, and Chris Diorio

    E-Print Network [OSTI]

    Diorio, Chris

    is the thermal Figure 1: An autozeroing oating-gate ampli er AFGA that uses pFET hot-electron injection a bandpass oating-gate ampli er that uses tunneling and pFET hot-electron injection to set its DC operating the current through the pFET. Steady state occurs when the injection current is equal to the tunneling current

  14. A review of "Gate of Heaven." by Abraham Cohen de Herrera

    E-Print Network [OSTI]

    William E. Engel

    2003-01-01T23:59:59.000Z

    , and always with a complex sensation compounded of affinity with, and unbridgeable distance from, the man whose pen marked the pages so idiosyncratically. Abraham Cohen de Herrera. Gate of Heaven. Translated from the Spanish with Introduction and Notes... ready access to Herrera?s Gate of Heaven. Not only is this the first English translation of Puerta del Cielo, but it is also the first complete annotated edition of 198 SEVENTEENTH-CENTURY NEWS this important work of Jewish mysticism in any language...

  15. Logic gates at the surface code threshold: Superconducting qubits poised for fault-tolerant quantum computing

    E-Print Network [OSTI]

    R. Barends; J. Kelly; A. Megrant; A. Veitia; D. Sank; E. Jeffrey; T. C. White; J. Mutus; A. G. Fowler; B. Campbell; Y. Chen; Z. Chen; B. Chiaro; A. Dunsworth; C. Neill; P. O`Malley; P. Roushan; A. Vainsencher; J. Wenner; A. N. Korotkov; A. N. Cleland; John M. Martinis

    2014-02-19T23:59:59.000Z

    A quantum computer can solve hard problems - such as prime factoring, database searching, and quantum simulation - at the cost of needing to protect fragile quantum states from error. Quantum error correction provides this protection, by distributing a logical state among many physical qubits via quantum entanglement. Superconductivity is an appealing platform, as it allows for constructing large quantum circuits, and is compatible with microfabrication. For superconducting qubits the surface code is a natural choice for error correction, as it uses only nearest-neighbour coupling and rapidly-cycled entangling gates. The gate fidelity requirements are modest: The per-step fidelity threshold is only about 99%. Here, we demonstrate a universal set of logic gates in a superconducting multi-qubit processor, achieving an average single-qubit gate fidelity of 99.92% and a two-qubit gate fidelity up to 99.4%. This places Josephson quantum computing at the fault-tolerant threshold for surface code error correction. Our quantum processor is a first step towards the surface code, using five qubits arranged in a linear array with nearest-neighbour coupling. As a further demonstration, we construct a five-qubit Greenberger-Horne-Zeilinger (GHZ) state using the complete circuit and full set of gates. The results demonstrate that Josephson quantum computing is a high-fidelity technology, with a clear path to scaling up to large-scale, fault-tolerant quantum circuits.

  16. Magic State Distillation and Gate Compilation in Quantum Algorithms for Quantum Chemistry

    E-Print Network [OSTI]

    Colin J. Trout; Kenneth R. Brown

    2015-01-29T23:59:59.000Z

    Quantum algorithms for quantum chemistry map the dynamics of electrons in a molecule to the dynamics of a coupled spin system. To reach chemical accuracy for interesting molecules, a large number of quantum gates must be applied which implies the need for quantum error correction and fault-tolerant quantum computation. Arbitrary fault-tolerant operations can be constructed from a small, universal set of fault-tolerant operations by gate compilation. Quantum chemistry algorithms are compiled by decomposing the dynamics of the coupled spin-system using a Trotter formula, synthesizing the decomposed dynamics using Clifford operations and single-qubit rotations, and finally approximating the single-qubit rotations by a sequence of fault-tolerant single-qubit gates. Certain fault-tolerant gates rely on the preparation of specific single-qubit states referred to as magic states. As a result, gate compilation and magic state distillation are critical for solving quantum chemistry problems on a quantum computer. We review recent progress that has improved the efficiency of gate compilation and magic state distillation by orders of magnitude.

  17. Magic State Distillation and Gate Compilation in Quantum Algorithms for Quantum Chemistry

    E-Print Network [OSTI]

    Colin J. Trout; Kenneth R. Brown

    2015-01-07T23:59:59.000Z

    Quantum algorithms for quantum chemistry map the dynamics of electrons in a molecule to the dynamics of a coupled spin system. To reach chemical accuracy for interesting molecules, a large number of quantum gates must be applied which implies the need for quantum error correction and fault-tolerant quantum computation. Arbitrary fault-tolerant operations can be constructed from a small, universal set of fault-tolerant operations by gate compilation. Quantum chemistry algorithms are compiled by decomposing the dynamics of the coupled spin-system using a Trotter formula, synthesizing the decomposed dynamics using Clifford operations and single-qubit rotations, and finally approximating the single-qubit rotations by a sequence of fault-tolerant single-qubit gates. Certain fault-tolerant gates rely on the preparation of specific single-qubit states referred to as magic states. As a result, gate compilation and magic state distillation are critical for solving quantum chemistry problems on a quantum computer. We review recent progress that has improved the efficiency of gate compilation and magic state distillation by orders of magnitude.

  18. New VLSI complexity results for threshold gate comparison

    SciTech Connect (OSTI)

    Beiu, V.

    1996-12-31T23:59:59.000Z

    The paper overviews recent developments concerning optimal (from the point of view of size and depth) implementations of COMPARISON using threshold gates. We detail a class of solutions which also covers another particular solution, and spans from constant to logarithmic depths. These circuit complexity results are supplemented by fresh VLSI complexity results having applications to hardware implementations of neural networks and to VLSI-friendly learning algorithms. In order to estimate the area (A) and the delay (T), as well as the classical AT{sup 2}, we shall use the following {open_quote}cost functions{close_quote}: (i) the connectivity (i.e., sum of fan-ins) and the number-of-bits for representing the weights and thresholds are used as closer approximations of the area; while (ii) the fan-ins and the length of the wires are used for closer estimates of the delay. Such approximations allow us to compare the different solutions-which present very interesting fan-in dependent depth-size and area-delay tradeoffs - with respect to AT{sup 2}.

  19. Understanding and Managing Generation Y

    E-Print Network [OSTI]

    Wallace, Kevin

    2007-12-14T23:59:59.000Z

    There are four generations in the workplace today; they consist of the Silent Generation, Baby Boom Generation, Generation X, and Generation Y. Generation Y, being the newest generation, is the least understood generation although marketers...

  20. Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain

    SciTech Connect (OSTI)

    Tuokedaerhan, K.; Natori, K.; Iwai, H. [Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Kakushima, K., E-mail: kakushima@ep.titech.ac.jp; Kataoka, Y.; Nishiyama, A.; Sugii, N.; Wakabayashi, H.; Tsutsui, K. [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan)

    2014-01-13T23:59:59.000Z

    Interface properties of La-silicate gate dielectrics on Si substrates with W or nano-sized grain W{sub 2}C gate electrodes have been investigated. A low interface state density of 2.5?×?10{sup 11}?cm{sup ?2}/eV has been achieved with W{sub 2}C gate electrodes, which is one third of those with W gate electrode. An interface roughness of 0.33?nm with spatial frequency comparable to the grain size of W gate electrode has been observed. Besides, an atomically flat interface of 0.12?nm has been obtained with W{sub 2}C gate electrode. The origin of flat interface may be attributed to the elimination of inhomogeneous stress by grains in metal electrode.

  1. Compressed Gated Range Sensing Grigorios Tsagkatakisa, Arnaud Woiselleb, George Tzagkarakisc,

    E-Print Network [OSTI]

    Tsakalides, Panagiotis

    emitting diode (LED), and an imaging sensor in order to generate a 2D depth map of a scene. Time. INTRODUCTION Active Range Imaging systems employ an active illumination source, typically a laser or a light

  2. Part I:Part I: Degradation in 3.2 nm Gate Oxides:Degradation in 3.2 nm Gate Oxides: Effects on Inverter Performance and MOSFETEffects on Inverter Performance and MOSFET

    E-Print Network [OSTI]

    Anlage, Steven

    on Inverter Performance and MOSFETEffects on Inverter Performance and MOSFET Characteristics.2 nm Gate Oxides: Effects on Inverter Performance and MOSFETEffects on Inverter Performance and MOSFET

  3. Exact solutions for a universal set of quantum gates on a family of iso-spectral spin chains

    E-Print Network [OSTI]

    V. Karimipour; N. Majd

    2005-09-25T23:59:59.000Z

    We find exact solutions for a universal set of quantum gates on a scalable candidate for quantum computers, namely an array of two level systems. The gates are constructed by a combination of dynamical and geometrical (non-Abelian) phases. Previously these gates have been constructed mostly on non-scalable systems and by numerical searches among the loops in the manifold of control parameters of the Hamiltonian.

  4. Generation gaps in engineering?

    E-Print Network [OSTI]

    Kim, David J. (David Jinwoo)

    2008-01-01T23:59:59.000Z

    There is much enthusiastic debate on the topic of generation gaps in the workplace today; what the generational differences are, how to address the apparent challenges, and if the generations themselves are even real. ...

  5. CONSULTANT REPORT DISTRIBUTED GENERATION

    E-Print Network [OSTI]

    CONSULTANT REPORT DISTRIBUTED GENERATION INTEGRATION COST STUDY Analytical Framework energy development, or distributed generation, in California. In May 2012, Southern California Edison Southern California Edison's approach to evaluating distributed generation impacts, and to conduct

  6. Water gate array for current flow or tidal movement pneumatic harnessing system

    DOE Patents [OSTI]

    Gorlov, Alexander M. (Brookline, MA)

    1991-01-01T23:59:59.000Z

    The invention, which provides a system for harnessing power from current flow or tidal movement in a body of water, comprises first and second hydro-pneumatic chambers each having ingress and egress below the water surface near the river or ocean floor and water gates operative to open or seal the ports to the passage of water. In an exemplary embodiment, the gates are sychronized by shafts so that the ingress ports of each chamber are connected to the egress ports of each other chamber. Thus, one set of gates is closed, while the other is open, thereby allowing water to flow into one chamber and build air pressure therein and allowing water to flow out of the other chamber and create a partial vacuum therein. A pipe connects the chambers, and an air turbine harnesses the air movement within the pipe. When water levels are equilibrated, the open set of gates is closed by a counterweight, and the other set is allowed to open by natural force of the water differential. The water gates may be comprised of a plurality of louvers which are ganged for simultaneous opening and closing. The system is designed to operate with air turbines or other pneumatic devices. Its design minimizes construction cost and environmental impact, yet provides a clean renewable energy source.

  7. Small Generator Aggregation (Maine)

    Broader source: Energy.gov [DOE]

    This section establishes requirements for electricity providers to purchase electricity from small generators, with the goal of ensuring that small electricity generators (those with a nameplate...

  8. Next Generation Reactors

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nuclear Advances We are coordinating the Generation IV Nuclear Systems Initiative - an international effort to develop the next generation of nuclear power reactors. Skip...

  9. Concentrated Solar Power Generation.

    E-Print Network [OSTI]

    Jin, Zhilei

    2013-01-01T23:59:59.000Z

    ??Solar power generation is the most promising technology to transfer energy consumption reliance from fossil fuel to renewable sources. Concentrated solar power generation is a… (more)

  10. Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment

    SciTech Connect (OSTI)

    Lim, Taekyung; Kim, Dongchool; Ju, Sanghyun [Department of Physics, Kyonggi University, Suwon, Gyeonggi-Do 443-760 (Korea, Republic of)

    2013-07-01T23:59:59.000Z

    Deposition of high-quality dielectric on a graphene channel is an essential technology to overcome structural constraints for the development of nano-electronic devices. In this study, we investigated a method for directly depositing aluminum oxide (Al{sub 2}O{sub 3}) on a graphene channel through nitrogen plasma treatment. The deposited Al{sub 2}O{sub 3} thin film on graphene demonstrated excellent dielectric properties with negligible charge trapping and de-trapping in the gate insulator. A top-gate-structural graphene transistor was fabricated using Al{sub 2}O{sub 3} as the gate dielectric with nitrogen plasma treatment on graphene channel region, and exhibited p-type transistor characteristics.

  11. Optical imaging through turbid media with a degenerate four-wave mixing correlation time gate

    DOE Patents [OSTI]

    Sappey, Andrew D. (Golden, CO)

    1998-04-14T23:59:59.000Z

    Optical imaging through turbid media is demonstrated using a degenerate four-wave mixing correlation time gate. An apparatus and method for detecting ballistic and/or snake light while rejecting unwanted diffusive light for imaging structures within highly scattering media are described. Degenerate four-wave mixing (DFWM) of a doubled YAG laser in rhodamine 590 is used to provide an ultrafast correlation time gate to discriminate against light that has undergone multiple scattering and therefore has lost memory of the structures within the scattering medium. Images have been obtained of a test cross-hair pattern through highly turbid suspensions of whole milk in water that are opaque to the naked eye, which demonstrates the utility of DFWM for imaging through turbid media. Use of DFWM as an ultrafast time gate for the detection of ballistic and/or snake light in optical mammography is discussed.

  12. Coherent motion of stereocilia assures the concerted gating of hair-cell transduction channels

    E-Print Network [OSTI]

    Andrei S. Kozlov; Thomas Risler; A. J. Hudspeth

    2009-02-16T23:59:59.000Z

    The hair cell's mechanoreceptive organelle, the hair bundle, is highly sensitive because its transduction channels open over a very narrow range of displacements. The synchronous gating of transduction channels also underlies the active hair-bundle motility that amplifies and tunes responsiveness. The extent to which the gating of independent transduction channels is coordinated depends on how tightly individual stereocilia are constrained to move as a unit. Using dual-beam interferometry in the bullfrog's sacculus, we found that thermal movements of stereocilia located as far apart as a bundle's opposite edges display high coherence and negligible phase lag. Because the mechanical degrees of freedom of stereocilia are strongly constrained, a force applied anywhere in the hair bundle deflects the structure as a unit. This feature assures the concerted gating of transduction channels that maximizes the sensitivity of mechanoelectrical transduction and enhances the hair bundle's capacity to amplify its inputs.

  13. Resilience of gated avalanche photodiodes against bright illumination attacks in quantum cryptography

    E-Print Network [OSTI]

    Z. L. Yuan; J. F. Dynes; A. J. Shields

    2011-06-14T23:59:59.000Z

    Semiconductor avalanche photodiodes (APDs) are commonly used for single photon detection in quantum key distribution. Recently, many attacks using bright illumination have been proposed to manipulate gated InGaAs APDs. In order to devise effective counter-measures, careful analysis of these attacks must be carried out to distinguish between incorrect operation and genuine loopholes. Here, we show that correctly-operated, gated APDs are immune to continuous-wave illumination attacks, while monitoring the photocurrent for anomalously high values is a straightforward counter-measure against attacks using temporally tailored light.

  14. Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays

    SciTech Connect (OSTI)

    Clément, N., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr; Han, X. L. [Institute of Electronics, Microelectronics and Nanotechnology, CNRS, Avenue Poincaré, 59652 Villeneuve d'Ascq (France)] [Institute of Electronics, Microelectronics and Nanotechnology, CNRS, Avenue Poincaré, 59652 Villeneuve d'Ascq (France); Larrieu, G., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr [Laboratory for Analysis and Architecture of Systems (LAAS), CNRS, Universite de Toulouse, 7 Avenue Colonel Roche, 31077 Toulouse (France)

    2013-12-23T23:59:59.000Z

    Low-frequency noise is used to study the electronic transport in arrays of 14?nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the heart of the wire, and the extremely low noise level is comparable to that of high quality epitaxial layers. Although contact noise can already be a source of poor transistor operation above threshold voltage for few nanowires, nanowire parallelization drastically reduces its impact.

  15. Noise-Protected Gate for Six-Electron Double-Dot Qubits

    E-Print Network [OSTI]

    Sebastian Mehl; David P. DiVincenzo

    2014-08-05T23:59:59.000Z

    Singlet-triplet spin qubits in six-electron double quantum dots, in moderate magnetic fields, can show superior immunity to charge noise. This immunity results from the symmetry of orbitals in the second energy shell of circular quantum dots: singlet and triplet states in this shell have identical charge distributions. Our phase-gate simulations, which include $1/f$ charge noise from fluctuating traps, show that this symmetry is most effectively exploited if the gate operation switches rapidly between sweet spots deep in the (3,3) and (4,2) charge stability regions; fidelities very close to one are predicted if subnanosecond switching can be performed.

  16. ENERGY GENERATION RESEARCH PIER Energy Generation Research

    E-Print Network [OSTI]

    ENERGY GENERATION RESEARCH PIER Energy Generation Research www.energy.ca.gov/research/ renewable/ November 2010 Sonoma County RESCO A Local Level Approach to Renewable Energy Portfolios. The Issue To address energy usage that contributes to climate change, California has enacted legislation to guide

  17. Crystal Structure of the Mammalian GIRK2 KplusChannel and Gating Regulation by G Proteins PIP2 and Sodium

    SciTech Connect (OSTI)

    M Whorton; R MacKinnon

    2011-12-31T23:59:59.000Z

    G protein-gated K{sup +} channels (Kir3.1--Kir3.4) control electrical excitability in many different cells. Among their functions relevant to human physiology and disease, they regulate the heart rate and govern a wide range of neuronal activities. Here, we present the first crystal structures of a G protein-gated K{sup +} channel. By comparing the wild-type structure to that of a constitutively active mutant, we identify a global conformational change through which G proteins could open a G loop gate in the cytoplasmic domain. The structures of both channels in the absence and presence of PIP{sub 2} suggest that G proteins open only the G loop gate in the absence of PIP{sub 2}, but in the presence of PIP{sub 2} the G loop gate and a second inner helix gate become coupled, so that both gates open. We also identify a strategically located Na{sup +} ion-binding site, which would allow intracellular Na{sup +} to modulate GIRK channel activity. These data provide a structural basis for understanding multiligand regulation of GIRK channel gating.

  18. Dominant-Negative Synthesis Suppression of Voltage-Gated Calcium Channel Cav2.2 Induced by Truncated Constructs

    E-Print Network [OSTI]

    Dolphin, Annette C.

    Dominant-Negative Synthesis Suppression of Voltage-Gated Calcium Channel Cav2.2 Induced, United Kingdom Voltage-gated calcium channel 1 subunits consist of four domains (I­IV), each with six by the cytoplasmic I-II loop of Cav2.2. It requires transmembrane seg- ments, because the isolated Cav2.2 N terminus

  19. High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor

    E-Print Network [OSTI]

    Lu, Bin

    In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

  20. Trapping in deep defects under substrate hot electron stress in TiN/Hf-silicate based gate stacks

    E-Print Network [OSTI]

    Misra, Durgamadhab "Durga"

    Trapping in deep defects under substrate hot electron stress in TiN/Hf-silicate based gate stacks N. Zaslavsky Abstract Substrate hot electron stress was applied on n+ -ringed n-channel MOS capacitors with TiN/Hf-silicate. Introduction Hafnium silicate based high-j gate dielectrics have been put forth as the leading candidates

  1. ECG-GATED C-ARM COMPUTED TOMOGRAPHY USING L1 REGULARIZATION Cyril Mory 1,3

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    ECG-GATED C-ARM COMPUTED TOMOGRAPHY USING L1 REGULARIZATION Cyril Mory 1,3 , Bo Zhang 3 , Vincent of the algorithm used for the minimization. Index Terms -- C-Arm, computed tomography, ECG- gating, augmented arises from the synchronization with the patient's electrocardiogram (ECG), which is necessary to avoid

  2. Gamma ray generator

    DOE Patents [OSTI]

    Firestone, Richard B; Reijonen, Jani

    2014-05-27T23:59:59.000Z

    An embodiment of a gamma ray generator includes a neutron generator and a moderator. The moderator is coupled to the neutron generator. The moderator includes a neutron capture material. In operation, the neutron generator produces neutrons and the neutron capture material captures at least some of the neutrons to produces gamma rays. An application of the gamma ray generator is as a source of gamma rays for calibration of gamma ray detectors.

  3. Generation to Generation: The Heart of Family Medicine

    E-Print Network [OSTI]

    Winter, Robin O

    2012-01-01T23:59:59.000Z

    Ageism in the Workplace. Generations Spring, 5. Westman,of caring for multiple generations simultaneously. StronglyGeneration to Generation: The Heart of Family Medicine

  4. An energy relaxation tolerant approach to quantum entanglement, information transfer, and gates with superconducting-quantum-interference-device qubits in cavity QED

    E-Print Network [OSTI]

    Yang, Chuiping; Chu, Shih-I; Han, Siyuan

    2004-03-31T23:59:59.000Z

    A scheme is proposed for realizing quantum entanglement, information transfer, CNOT gates, and SWAP gates with supercoiiducting-quantum-interference-device (SQUID) qubits in cavity QED. In the scheme, the two logical states ...

  5. Possible realization of entanglement, logical gates, and quantum-information transfer with superconducting-quantum-interference-device qubits in cavity QED

    E-Print Network [OSTI]

    Yang, Chui-Ping; Chu, Shih-I; Han, Siyuan

    2003-04-17T23:59:59.000Z

    We present a scheme to achieve maximally entangled states, controlled phase-shift gate, and SWAP gate for two superconducting-quantum-interference-device (SQUID) qubits, by placing SQUIDs in a microwave cavity. We also ...

  6. Cylindrical neutron generator

    DOE Patents [OSTI]

    Leung, Ka-Ngo

    2005-06-14T23:59:59.000Z

    A cylindrical neutron generator is formed with a coaxial RF-driven plasma ion source and target. A deuterium (or deuterium and tritium) plasma is produced by RF excitation in a cylindrical plasma ion generator using an RF antenna. A cylindrical neutron generating target is coaxial with the ion generator, separated by plasma and extraction electrodes which contain many slots. The plasma generator emanates ions radially over 360.degree. and the cylindrical target is thus irradiated by ions over its entire circumference. The plasma generator and target may be as long as desired. The plasma generator may be in the center and the neutron target on the outside, or the plasma generator may be on the outside and the target on the inside. In a nested configuration, several concentric targets and plasma generating regions are nested to increase the neutron flux.

  7. Cylindrical neutron generator

    DOE Patents [OSTI]

    Leung, Ka-Ngo (Hercules, CA)

    2008-04-22T23:59:59.000Z

    A cylindrical neutron generator is formed with a coaxial RF-driven plasma ion source and target. A deuterium (or deuterium and tritium) plasma is produced by RF excitation in a cylindrical plasma ion generator using an RF antenna. A cylindrical neutron generating target is coaxial with the ion generator, separated by plasma and extraction electrodes which contain many slots. The plasma generator emanates ions radially over 360.degree. and the cylindrical target is thus irradiated by ions over its entire circumference. The plasma generator and target may be as long as desired. The plasma generator may be in the center and the neutron target on the outside, or the plasma generator may be on the outside and the target on the inside. In a nested configuration, several concentric targets and plasma generating regions are nested to increase the neutron flux.

  8. Cylindrical neutron generator

    DOE Patents [OSTI]

    Leung, Ka-Ngo (Hercules, CA)

    2009-12-29T23:59:59.000Z

    A cylindrical neutron generator is formed with a coaxial RF-driven plasma ion source and target. A deuterium (or deuterium and tritium) plasma is produced by RF excitation in a cylindrical plasma ion generator using an RF antenna. A cylindrical neutron generating target is coaxial with the ion generator, separated by plasma and extraction electrodes which contain many slots. The plasma generator emanates ions radially over 360.degree. and the cylindrical target is thus irradiated by ions over its entire circumference. The plasma generator and target may be as long as desired. The plasma generator may be in the center and the neutron target on the outside, or the plasma generator may be on the outside and the target on the inside. In a nested configuration, several concentric targets and plasma generating regions are nested to increase the neutron flux.

  9. Circadian gating of the psbAIII high light response in Synechococcus sp. strain PCC 7942

    E-Print Network [OSTI]

    Shelton, Jeffrey Lyn

    2000-01-01T23:59:59.000Z

    (1-5 fold) during the peaks of the cycle. We also found that in a clock null strain the lack of an oscillator does not entirely negate the light response of PpsbAIII::luxAB; however, this response does not demonstrate gating. In contrast...

  10. Elsevier Science 1 Use of the GATE Monte Carlo package for dosimetry

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Elsevier Science 1 Use of the GATE Monte Carlo package for dosimetry applications D. Visvikis, a* M Angeles, USA Abstract One of the roles for MC simulation studies is in the area of dosimetry. A number of different codes dedicated to dosimetry applications are available and widely used today, such as MCNP

  11. How to Successfully Implement a Knowledge Management System for the Mechanical Engineering Department at Gating Incorporated

    E-Print Network [OSTI]

    Mudd, John

    2009-05-15T23:59:59.000Z

    . With this explosive growth, it has become imperative that Gating Incorporated instill a Knowledge Management System to retain the vast amount of tacit knowledge. New products are critical for consumer product companies, so finding ways to capture the knowledge of a...

  12. Passivation effect on gate-bias stress instability of carbon nanotube thin film transistors

    SciTech Connect (OSTI)

    Won Lee, Sang [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Suh, Dongseok, E-mail: energy.suh@skku.edu [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science and Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Young Lee, Si [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Physics, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Hee Lee, Young, E-mail: leeyoung@skku.edu [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science and Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Physics, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2014-04-21T23:59:59.000Z

    A prior requirement of any developed transistor for practical use is the stability test. Random network carbon nanotube-thin film transistor (CNT-TFT) was fabricated on SiO{sub 2}/Si. Gate bias stress stability was investigated with various passivation layers of HfO{sub 2} and Al{sub 2}O{sub 3}. Compared to the threshold voltage shift without passivation layer, the measured values in the presence of passivation layers were reduced independent of gate bias polarity except HfO{sub 2} under positive gate bias stress (PGBS). Al{sub 2}O{sub 3} capping layer was found to be the best passivation layer to prevent ambient gas adsorption, while gas adsorption on HfO{sub 2} layer was unavoidable, inducing surface charges to increase threshold voltage shift in particular for PGBS. This high performance in the gate bias stress test of CNT-TFT even superior to that of amorphous silicon opens potential applications to active TFT industry for soft electronics.

  13. Needle-based reflection refractometry of scattering samples using coherence-gated

    E-Print Network [OSTI]

    Boppart, Stephen

    effects of internal refractive index variation in near-infrared optical tomography: a finite element, and K. D. Paulsen, "Effects of refractive index on near- infrared tomography of the breast," Appl. OptNeedle-based reflection refractometry of scattering samples using coherence-gated detection Adam M

  14. Unique Functional Properties of a Sensory Neuronal P2X ATP-Gated Channel from Zebrafish

    E-Print Network [OSTI]

    Séguéla, Philippe

    of native P2X receptor channels evokes a fast inward current carried by mono- valent and calcium ions in a broad range of calcium- dependent signaling events from the neurogenic control of smooth muscle, and a cysteine-rich extracellular loop resembles that of recently discovered proton-gated channels (Wald- mann

  15. Ligand Gated Ion Channel Functionality Assays Robert P. Hayes, Kumud Raj Poudel and James A. Brozik

    E-Print Network [OSTI]

    Collins, Gary S.

    was to devise a method suitable to test the functionality of the entire family of cysteine-loop ligand gated ion substrate was infused with calcium ions that were trapped by the POPC bilayer. Once the assembly was formed. Electrochemical measurements were taken using a calcium ion sensitive electrode. The assemblies were interrogated

  16. International Agriculture Fellowship: A Gates Foundation Grand Challenges Exploration in Endophytic Biological Control

    E-Print Network [OSTI]

    Ferrara, Katherine W.

    International Agriculture Fellowship: A Gates Foundation Grand Challenges Exploration in Endophytic Biological Control Who we are: The International Center for Tropical Agriculture (CIAT) is a member institute of the Consultative Group on International Agricultural Research (CIAR). Based in Cali, Colombia, we focus

  17. Accuracy of gates in a quantum computer based on vibrational eigenstates Dmitri Babikov

    E-Print Network [OSTI]

    Reid, Scott A.

    of quantum gates in such a system. Optimal control theory and numerical time-propagation of vibrational wave the computational sciences:2 ``Quantum computing would be to ordinary com- puting what nuclear energy is to fire'' consisting of two states 0 and 1 that have been harnessed for running quantum computing algorithms, setting

  18. Spin transistor operation driven by the Rashba spin-orbit coupling in the gated nanowire

    SciTech Connect (OSTI)

    Wójcik, P.; Adamowski, J., E-mail: adamowski@fis.agh.edu.pl; Spisak, B. J.; Wo?oszyn, M. [Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, Kraków (Poland)

    2014-03-14T23:59:59.000Z

    A theoretical description has been proposed for the operation of the spin transistor in the gate-controlled InAs nanowire. The calculated current-voltage characteristics show that the electron current flowing from the source (spin injector) to the drain (spin detector) oscillates as a function of the gate voltage, which results from the precession of the electron spin caused by the Rashba spin-orbit interaction in the vicinity of the gate. We have studied the operation of the spin transistor under the following conditions: (A) the full spin polarization of electrons in the contacts, zero temperature, and the single conduction channel corresponding to the lowest-energy subband of the transverse motion and (B) the partial spin polarization of the electrons in the contacts, the room temperature, and the conduction via many transverse subbands taken into account. For case (A), the spin-polarized current can be switched on/off by the suitable tuning of the gate voltage, for case (B) the current also exhibits the pronounced oscillations but with no-zero minimal values. The computational results obtained for case (B) have been compared with the recent experimental data and a good agreement has been found.

  19. Influence of Electrolyte Composition on Liquid-Gated Carbon Nanotube and Graphene Transistors

    E-Print Network [OSTI]

    Dekker, Cees

    Influence of Electrolyte Composition on Liquid-Gated Carbon Nanotube and Graphene Transistors Iddo-walled carbon nanotubes (SWNTs) and graphene can function as highly sensitive nanoscale (bio)sensors in solution. Here, we compare experimentally how SWNT and graphene transistors respond to changes in the composition

  20. 7-Gate Kinetic AMPA Model Kinetics to match EPSCs from calyx of Held

    E-Print Network [OSTI]

    Graham, Bruce

    7-Gate Kinetic AMPA Model · Kinetics to match EPSCs from calyx of Held · Multiple closed, open and EPSC amplitude Bruce Graham Department of Computing Science and Mathematics, University of Stirling, U, including the calyx of Held in the mammalian auditory system. Such depression may be mediated

  1. REAL-TIME DUAL-MICROPHONE SPEECH ENHANCEMENT USING FIELD PROGRAMMABLE GATE ARRAYS

    E-Print Network [OSTI]

    Sheikholeslami, Ali

    REAL-TIME DUAL-MICROPHONE SPEECH ENHANCEMENT USING FIELD PROGRAMMABLE GATE ARRAYS David Halupka@eecg}.toronto.edu ABSTRACT This paper discusses an implementation of a dual- microphone phase-based speech enhancement or irrelevant conversations, are present has fueled research interest in the areas of speech enhancement

  2. Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology

    E-Print Network [OSTI]

    Lu, Jiang

    2007-04-25T23:59:59.000Z

    of the doped films were explained by their compositions and bond structures. The Hf-doped TaOx film is a potential high-k gate dielectric for future MOS transistors. A 5 Ã?Â? tantalum nitride (TaNx) interface layer has been inserted between the Hf-doped Ta...

  3. Method and system for measuring gate valve clearances and seating force

    DOE Patents [OSTI]

    Casada, Donald A. (Knoxville, TN); Haynes, Howard D. (Knoxville, TN); Moyers, John C. (Oak Ridge, TN); Stewart, Brian K. (Burns, TN)

    1996-01-01T23:59:59.000Z

    Valve clearances and seating force, as well as other valve operational parameters, are determined by measuring valve stem rotation during opening and closing operations of a translatable gate valve. The magnitude of the stem rotation, and the relative difference between the stem rotation on opening and closing provides valuable data on the valve internals in a non-intrusive manner.

  4. Gate Voltage Control of Oxygen Diffusion on Graphene Dr. Jorge O. Sofo

    E-Print Network [OSTI]

    Bjørnstad, Ottar Nordal

    Gate Voltage Control of Oxygen Diffusion on Graphene Dr. Jorge O. Sofo Associate Professor conductivity (twice that of diamond). Due to Carbon's affinity for tetrahedral bonding, its surface is amenable atoms. Our research focuses on the attachment and diffusion of different atomic species to the surface

  5. Economic Congestion Relief Across Multiple Regions Requires Tradable Physical Flow-gate Rights

    E-Print Network [OSTI]

    California at Berkeley. University of

    PWP-076 Economic Congestion Relief Across Multiple Regions Requires Tradable Physical Flow.ucei.berkeley.edu/ucei #12;Economic Congestion Relief Across Multiple Regions Requires Tradable Physical Flow-gate Rights- mission use. The North American Electric Reliability Council NERC is in the process of implementing

  6. Effects of Magnesium on Inactivation of the Voltage-gated Calcium Current in

    E-Print Network [OSTI]

    Effects of Magnesium on Inactivation of the Voltage-gated Calcium Current in Cardiac Myocytes H-dependent inactivation can be modulated by changes in cytoplasmic Mg~+. INTRODUCTION Magnesium is an important constituent of the intracellular milieu. Despite the importance of magnesium as an essential cofactor

  7. Photothermal Response in Dual-Gated Bilayer Graphene M.-H. Kim,1

    E-Print Network [OSTI]

    Murphy, Thomas E.

    Photothermal Response in Dual-Gated Bilayer Graphene M.-H. Kim,1 J. Yan,1,2 R. J. Suess,3 T. E photoresponse in gapped bilayer graphene was investigated by optical and transport measurements. A pulse There is growing recognition that graphene has excep- tional potential as a new optoelectronic material, which has

  8. Current transport, gate dielectrics and band gap engineering in graphene devices

    E-Print Network [OSTI]

    Perebeinos, Vasili

    Current transport, gate dielectrics and band gap engineering in graphene devices Wenjuan Zhu In this work, we studied current transport in mono-, bi- and tri-layer graphene. We find that both of the electrical field of the substrate surface polar phonons in bi-layer/tri-layer graphenes. We also find

  9. Gate-modulated thermoelectric conversion in disordered nanowires: I. Low temperature coherent regime

    E-Print Network [OSTI]

    Recanati, Catherine

    Gate-modulated thermoelectric conversion in disordered nanowires: I. Low temperature coherent as promising thermoelectric devices1 . In comparison to their bulk counterparts, they provide opportunities of thermoelectric conversion at a given temperature T . Indeed, they allow to reduce the phonon contribution ph

  10. Title: Hydraulic modeling of a mixed water level control hydro-mechanical gate

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Title: Hydraulic modeling of a mixed water level control hydro-mechanical gate Ludovic Cassan1 Abstract: The article describes the hydraulic functioning of a mixed water level control hydro- mechanical of the model to reproduce the functioning of this complex hydro-mechanical system. CE database Subject headings

  11. Finding the Energy Efficient Curve: Gate Sizing for Minimum Power under Delay Constraints

    E-Print Network [OSTI]

    Kolodny, Avinoam

    Finding the Energy Efficient Curve: Gate Sizing for Minimum Power under Delay Constraints Yoni in a fast circuit by the same factor does not yield an energy-efficient design, and we characterize efficient. A design implementation is considered to be energy efficient when it has the highest performance

  12. Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction

    E-Print Network [OSTI]

    Garfunkel, Eric

    Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing-8087 Received 13 April 2005; accepted 6 June 2005; published online 26 July 2005 A silicate reaction between process route to interface elimination, while producing a silicate dielectric with a higher temperature

  13. Sulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensor

    E-Print Network [OSTI]

    Tobin, Roger G.

    monitoring, solid-oxide fuel cells, and coal gasification, require operation at much higher temperatures thanSulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensor Yung Ho to hydrogen sulfide, even in the presence of hydrogen or oxygen at partial pressures of 20­600 times greater

  14. Short range micro-power impulse radar with high resolution swept range gate with damped transmit and receive cavities

    DOE Patents [OSTI]

    McEwan, Thomas E. (Livermore, CA)

    1998-01-01T23:59:59.000Z

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with atypical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive and transmit cavities by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings.

  15. Synchronized operation by field programmable gate array based signal controller for the Thomson scattering diagnostic system in KSTAR

    SciTech Connect (OSTI)

    Lee, W. R.; Park, M. K.; Lee, J. H. [National Fusion Research Institute, Gwahangno 113, Daejeon 305-333 (Korea, Republic of); Kim, H. S. [Chungnam National University, Daehak-ro 99, Daejeon 305-764 (Korea, Republic of); Kim, K. H. [Seed Core Co., Ltd., Daehak-ro 99, Daejeon 305-764 (Korea, Republic of)

    2012-09-15T23:59:59.000Z

    The Thomson scattering diagnostic system is successfully installed in the Korea Superconducting Tokamak Advanced Research (KSTAR) facility. We got the electron temperature and electron density data for the first time in 2011, 4th campaign using a field programmable gate array (FPGA) based signal control board. It operates as a signal generator, a detector, a controller, and a time measuring device. This board produces two configurable trigger pulses to operate Nd:YAG laser system and receives a laser beam detection signal from a photodiode detector. It allows a trigger pulse to be delivered to a time delay module to make a scattered signal measurement, measuring an asynchronous time value between the KSTAR timing board and the laser system injection signal. All functions are controlled by the embedded processor running on operating system within a single FPGA. It provides Ethernet communication interface and is configured with standard middleware to integrate with KSTAR. This controller has operated for two experimental campaigns including commissioning and performed the reconfiguration of logic designs to accommodate varying experimental situation without hardware rebuilding.

  16. Short range micro-power impulse radar with high resolution swept range gate with damped transmit and receive cavities

    DOE Patents [OSTI]

    McEwan, T.E.

    1998-06-30T23:59:59.000Z

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with atypical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive and transmit cavities by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings. 20 figs.

  17. Computational Research Challenges and Opportunities for the Optimization of Fossil Energy Power Generation System

    SciTech Connect (OSTI)

    Zitney, S.E.

    2007-06-01T23:59:59.000Z

    Emerging fossil energy power generation systems must operate with unprecedented efficiency and near-zero emissions, while optimizing profitably amid cost fluctuations for raw materials, finished products, and energy. To help address these challenges, the fossil energy industry will have to rely increasingly on the use advanced computational tools for modeling and simulating complex process systems. In this paper, we present the computational research challenges and opportunities for the optimization of fossil energy power generation systems across the plant lifecycle from process synthesis and design to plant operations. We also look beyond the plant gates to discuss research challenges and opportunities for enterprise-wide optimization, including planning, scheduling, and supply chain technologies.

  18. New wave generation

    E-Print Network [OSTI]

    Mercier, Matthieu J.

    We present the results of a combined experimental and numerical study of the generation of internal waves using the novel internal wave generator design of Gostiaux et al. (Exp. Fluids, vol. 42, 2007, pp. 123–130). This ...

  19. On the electrical stress-induced oxide-trapped charges in thin HfO{sub 2}/SiO{sub 2} gate dielectric stack

    SciTech Connect (OSTI)

    Samanta, Piyas; Zhu Chunxiang; Chan, Mansun [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay Road, Kowloon, Hong Kong (China); Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 (Singapore); Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay Road, Kowloon, Hong Kong (China)

    2007-09-10T23:59:59.000Z

    Oxide charge buildup and its generation kinetics during constant voltage stress in TaN/HfO{sub 2}/SiO{sub 2}/p-Si structures have been experimentally investigated. From the oxide charge relaxation experiments, nature and energy location of the as-fabricated intrinsic hole traps in the gate stack have also been determined. Our measurement results indicate that the dispersive proton transport through the interfacial SiO{sub 2} contributes larger than hole trapping in positive charge buildup in the stack. From the bias temperature stress measurement results in both control oxide and HfO{sub 2}/SiO{sub 2} stacks, we have identified overcoordinated [Si{sub 2}=OH]{sup +} centers as the proton-induced defects located in the interfacial SiO{sub 2} layer of the stack. Finally, an empirical equation is proposed to explain the stress-induced oxide positive charge buildup.

  20. Robust quantum gates and a bus architecture for quantum computing with rare-earth-ion doped crystals

    E-Print Network [OSTI]

    Janus Wesenberg; Klaus Moelmer

    2003-01-09T23:59:59.000Z

    We present a composite pulse controlled phase gate which together with a bus architecture improves the feasibility of a recent quantum computing proposal based on rare-earth-ion doped crystals. Our proposed gate operation is tolerant to variations between ions of coupling strengths, pulse lengths, and frequency shifts, and it achieves worst case fidelities above 0.999 with relative variations in coupling strength as high as 10% and frequency shifts up to several percent of the resonant Rabi frequency of the laser used to implement the gate. We outline an experiment to demonstrate the creation and detection of maximally entangled states in the system.

  1. 8/1/14 Google Maps https://www.google.com/maps/dir/Golden+Gate+Bridge,+San+Francisco,+CA+94129/UCSF%2FMission+Bay,+San+Francisco,+CA/@37.7996107,-122.4363906,... 1/2

    E-Print Network [OSTI]

    Derisi, Joseph

    8/1/14 Google Maps https://www.google.com/maps/dir/Golden+Gate+Bridge,+San+Francisco,+CA+94129/UCSF has tolls. Directions from Golden Gate Bridge to UCSF/Mission Bay San Francisco, CA 94129 Golden Gate;8/1/14 Google Maps https://www.google.com/maps/dir/Golden+Gate+Bridge,+San+Francisco,+CA+94129/UCSF%2FMission

  2. Creating a Cognitive Agent in a Virtual World: Planning, Navigation, and Natural Language Generation

    E-Print Network [OSTI]

    Hewlett, William

    2013-01-01T23:59:59.000Z

    Generation . . . . . . . . . . . . . . . . . . . . .Language Generation . . . . . . . . . . . . . . . . .Language Generation . . . . . . . . . . . . . . . . . . . .

  3. Steam generator support system

    DOE Patents [OSTI]

    Moldenhauer, J.E.

    1987-08-25T23:59:59.000Z

    A support system for connection to an outer surface of a J-shaped steam generator for use with a nuclear reactor or other liquid metal cooled power source is disclosed. The J-shaped steam generator is mounted with the bent portion at the bottom. An arrangement of elongated rod members provides both horizontal and vertical support for the steam generator. The rod members are interconnected to the steam generator assembly and a support structure in a manner which provides for thermal distortion of the steam generator without the transfer of bending moments to the support structure and in a like manner substantially minimizes forces being transferred between the support structure and the steam generator as a result of seismic disturbances. 4 figs.

  4. Steam generator support system

    DOE Patents [OSTI]

    Moldenhauer, James E. (Simi Valley, CA)

    1987-01-01T23:59:59.000Z

    A support system for connection to an outer surface of a J-shaped steam generator for use with a nuclear reactor or other liquid metal cooled power source. The J-shaped steam generator is mounted with the bent portion at the bottom. An arrangement of elongated rod members provides both horizontal and vertical support for the steam generator. The rod members are interconnected to the steam generator assembly and a support structure in a manner which provides for thermal distortion of the steam generator without the transfer of bending moments to the support structure and in a like manner substantially minimizes forces being transferred between the support structure and the steam generator as a result of seismic disturbances.

  5. Method of grid generation

    DOE Patents [OSTI]

    Barnette, Daniel W. (Veguita, NM)

    2002-01-01T23:59:59.000Z

    The present invention provides a method of grid generation that uses the geometry of the problem space and the governing relations to generate a grid. The method can generate a grid with minimized discretization errors, and with minimal user interaction. The method of the present invention comprises assigning grid cell locations so that, when the governing relations are discretized using the grid, at least some of the discretization errors are substantially zero. Conventional grid generation is driven by the problem space geometry; grid generation according to the present invention is driven by problem space geometry and by governing relations. The present invention accordingly can provide two significant benefits: more efficient and accurate modeling since discretization errors are minimized, and reduced cost grid generation since less human interaction is required.

  6. Vehicle Technologies Office Merit Review 2014: GATE Center for Electric Drive Transportation at the University of Michigan- Dearborn

    Broader source: Energy.gov [DOE]

    Presentation given by Regents University of Michigan at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center...

  7. Regulation of N-type Voltage-Gated Calcium Channels and Presynaptic Function by Cyclin-Dependent Kinase 5

    E-Print Network [OSTI]

    Su, Susan C.

    N-type voltage-gated calcium channels localize to presynaptic nerve terminals and mediate key events including synaptogenesis and neurotransmission. While several kinases have been implicated in the modulation of calcium ...

  8. Abstract----Recently, a novel multi-bit nonvolatile memory based on double gate (DG) MOSFET is

    E-Print Network [OSTI]

    Lee, Jong Duk

    and the negative control gate voltages applied for read operation. We used Silvaco Atlas, a 2- D numerical. The quantitative analysis were conducted by Silvaco Atlas, a 2-D numerical device simulator [4]. We read

  9. E-Print Network 3.0 - atp-gated p2x4 ion Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ion Search Powered by Explorit Topic List Advanced Search Sample search results for: atp-gated p2x4 ion Page: << < 1 2 3 4 5 > >> 1 introduction browse basic search advanced...

  10. Optimization of Enzymatic Biochemical Logic for Noise Reduction and Scalability: How Many Biocomputing Gates Can Be Interconnected in a Circuit?

    E-Print Network [OSTI]

    V. Privman; G. Strack; D. Solenov; M. Pita; E. Katz

    2008-09-13T23:59:59.000Z

    We report an experimental evaluation of the "input-output surface" for a biochemical AND gate. The obtained data are modeled within the rate-equation approach, with the aim to map out the gate function and cast it in the language of logic variables appropriate for analysis of Boolean logic for scalability. In order to minimize "analog" noise, we consider a theoretical approach for determining an optimal set for the process parameters to minimize "analog" noise amplification for gate concatenation. We establish that under optimized conditions, presently studied biochemical gates can be concatenated for up to order 10 processing steps. Beyond that, new paradigms for avoiding noise build-up will have to be developed. We offer a general discussion of the ideas and possible future challenges for both experimental and theoretical research for advancing scalable biochemical computing.

  11. Hybrid Photonic Hyper-Controlled-Not Gate with the Dipole Induced Transparency in Weak-Coupling Regime

    E-Print Network [OSTI]

    Bao-Cang Ren; Fu-Guo Deng

    2014-11-02T23:59:59.000Z

    We present a hybrid hyper-controlled-not (hyper-CNOT) gate for hyperparallel photonic quantum computing based on both the polarization and spatial-mode degrees of freedom (DOFs) of a two-photon system, which is identical to two CNOT gates operating at the same time on four photons in one DOF. This proposal is implemented with the optical reflection-transmission property of a diamond nitrogen-vacancy center embedded in a photonic crystal cavity coupled to two waveguides, which is suitable for the robust and flexible quantum information processing based on both the spatial-mode and polarization DOFs of photon systems in Purcell regime. With the hybrid hyper-CNOT gate, more quantum logic gate operations can be accomplished with less resources in a definite period of time, and the influence from photonic dissipation and environment noise can be suppressed.

  12. Talkin’ Bout Wind Generation

    Broader source: Energy.gov [DOE]

    The amount of electricity generated by the wind industry started to grow back around 1999, and since 2007 has been increasing at a rapid pace.

  13. SNE TRAFIC GENERATOR

    Energy Science and Technology Software Center (OSTI)

    003027MLTPL00 Network Traffic Generator for Low-rate Small Network Equipment Software  http://eln.lbl.gov/sne_traffic_gen.html 

  14. Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes

    E-Print Network [OSTI]

    Jun Zhang; Rob Thew; Claudio Barreiro; Hugo Zbinden

    2009-08-16T23:59:59.000Z

    We present a practical and easy-to-implement method for high-speed near infrared single-photon detection based on InGaAs/InP single-photon avalanche photodiodes (SPADs), combining aspects of both sine gating and self-differencing techniques. At a gating frequency of 921 MHz and temperature of -30 $^{\\circ}$C we achieve: a detection efficiency of 9.3 %, a dark count probability of 2.8$\\times10^{-6}$ ns$^{-1}$, while the afterpulse probability is 1.6$\\times10^{-4}$ ns$^{-1}$, with a 10 ns "count-off time" setting. In principle, the maximum count rate of the SPAD can approach 100 MHz, which can significantly improve the performance for diverse applications.

  15. A communication-efficient nonlocal measurement with application to communication complexity and bipartite gate capacities

    E-Print Network [OSTI]

    Aram W. Harrow; Debbie W. Leung

    2011-03-04T23:59:59.000Z

    Two dual questions in quantum information theory are to determine the communication cost of simulating a bipartite unitary gate, and to determine their communication capacities. We present a bipartite unitary gate with two surprising properties: 1) simulating it with the assistance of unlimited EPR pairs requires far more communication than with a better choice of entangled state, and 2) its communication capacity is far lower than its capacity to create entanglement. This suggests that 1) unlimited EPR pairs are not the most general model of entanglement assistance for two-party communication tasks, and 2) the entangling and communicating abilities of a unitary interaction can vary nearly independently. The technical contribution behind these results is a communication-efficient protocol for measuring whether an unknown shared state lies in a specified rank-one subspace or its orthogonal complement.

  16. Next-generation transcriptome assembly

    E-Print Network [OSTI]

    Martin, Jeffrey A.

    2012-01-01T23:59:59.000Z

    technologies - the next generation. Nat Rev Genet 11, 31-algorithms for next-generation sequencing data. Genomicsassembly from next- generation sequencing data. Genome Res

  17. Probing spin entanglement by gate-voltage-controlled interference of current correlation in quantum spin Hall insulators

    E-Print Network [OSTI]

    Wei Chen; Z. D. Wang; R. Shen; D. Y. Xing

    2014-05-21T23:59:59.000Z

    We propose an entanglement detector composed of two quantum spin Hall insulators and a side gate deposited on one of the edge channels. For an ac gate voltage, the differential noise contributed from the entangled electron pairs exhibits the nontrivial step structures, from which the spin entanglement concurrence can be easily obtained. The possible spin dephasing effects in the quantum spin Hall insulators are also included.

  18. Tri-Gate Bulk CMOS Technology for Improved SRAM Scalability Changhwan Shin, Borivoje Nikoli, Tsu-Jae King Liu

    E-Print Network [OSTI]

    Nikolic, Borivoje

    ] is an example of such a design; it utilizes a gate electrode that is physically wrapped around the top portion along a poly-Si gate electrode in an SRAM array, for 15nm nominal STI recess depth. The sequence), pull- 570nm 263nm 570nm 263nm PG1 PD1 PU1 PU2 PD2 PG2 (a) 570nm 263nm 570nm 263nm PG1 PD1 PU1 PU2 PD2

  19. A comparison of the full custom, standard cell and gate array design methodologies

    E-Print Network [OSTI]

    Kwan, King-Wai

    1990-01-01T23:59:59.000Z

    A COMPARISON OF THE FULL CUSTOM, STANDARD CELL AND GATE ARRAY DESIGN METHODOLOGIES A Thesis by KING-WAI I&WAN Submitted to the Office of Graduate Studies of Texas A&M University in partial fulffllment of the requirements for the degree... approaches, the designers can select appropriate cells in the libraries which meet their specific requirements such as driving capability and power consumption. But standard cell designs can be used to implement specialized macros such as multi-port...

  20. Highly enhanced avalanche probability using sinusoidally-gated silicon avalanche photodiode

    SciTech Connect (OSTI)

    Suzuki, Shingo; Namekata, Naoto, E-mail: nnao@phys.cst.nihon-u.ac.jp; Inoue, Shuichiro [Institute of Quantum Science, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Tsujino, Kenji [Tokyo Women's Medical University, 8-1 Kawada-cho, Shinjuku-ku, Tokyo 162-8666 (Japan)

    2014-01-27T23:59:59.000Z

    We report on visible light single photon detection using a sinusoidally-gated silicon avalanche photodiode. Detection efficiency of 70.6% was achieved at a wavelength of 520?nm when an electrically cooled silicon avalanche photodiode with a quantum efficiency of 72.4% was used, which implies that a photo-excited single charge carrier in a silicon avalanche photodiode can trigger a detectable avalanche (charge) signal with a probability of 97.6%.

  1. A 200 C Universal Gate Driver Integrated Circuit for Extreme Environment Applications

    SciTech Connect (OSTI)

    Tolbert, Leon M [ORNL; Huque, Mohammad A [ORNL; Islam, Syed K [ORNL; Blalock, Benjamin J [ORNL

    2012-01-01T23:59:59.000Z

    High-temperature power converters (dc-dc, dc-ac, etc.) have enormous potential in extreme environment applications, including automotive, aerospace, geothermal, nuclear, and well logging. For successful realization of such high-temperature power conversion modules, the associated control electronics also need to perform at high temperature. This paper presents a silicon-on-insulator (SOI) based high-temperature gate driver integrated circuit (IC) incorporating an on-chip low-power temperature sensor and demonstrating an improved peak output current drive over our previously reported work. This driver IC has been primarily designed for automotive applications, where the underhood temperature can reach 200 C. This new gate driver prototype has been designed and implemented in a 0.8 {micro}m, 2-poly, and 3-metal bipolar CMOS-DMOS (Double-Diffused Metal-Oxide Semiconductor) on SOI process and has been successfully tested for up to 200 C ambient temperature driving a SiC MOSFET and a SiC normally-ON JFET. The salient feature of the proposed universal gate driver is its ability to drive power switches over a wide range of gate turn-ON voltages such as MOSFET (0 to 20 V), normally-OFF JFET (-7 to 3 V), and normally-ON JFET (-20 to 0 V). The measured peak output current capability of the driver is around 5 A and is thus capable of driving several power switches connected in parallel. An ultralow-power on-chip temperature supervisory circuit has also been integrated into the die to safeguard the driver circuit against excessive die temperature ({ge}220 C). This approach utilizes increased diode leakage current at higher temperature to monitor the die temperature. The power consumption of the proposed temperature sensor circuit is below 10 {micro}W for operating temperature up to 200 C.

  2. Modeling the current behavior of the digital BiCMOS gate

    E-Print Network [OSTI]

    Tang, Zhilong

    1995-01-01T23:59:59.000Z

    CMOS gate showing the pull-up and pull-down sections 6 Schematics of the pull-up section Pull-up equivalent circuit model . Equivalent circuit model 10 Simplified equivalent circuit model Equivalent circuit model neglecting ATF Collector current... with ATF effect vs without ATF effect 14 Modified circuit model 16 10 Comparison of this work versus SPICE simulation Typical collector current response 17 12 13 Equivalent circuit for 0 ? t0 Equivalent circuit after t0 21 14 Base current...

  3. Case Studies on Variation Tolerant and Low Power Design Using Planar Asymmetric Double Gate Transistor

    E-Print Network [OSTI]

    Singh, Amrinder

    2011-10-21T23:59:59.000Z

    new circuit topology for IGFET, which on average shows 33.8% lower leakage and 34.9% lower area at the cost of 2.8% increase in total active mode power, for basic logic gates. Finally, we showed a technique for reducing leakage of minimum sized... ????????????????????????????????????????????????? 5 III.1 Power-delay product for FO4 inverter ????????????????????????????????????? 12 III.2 Power-delay product for 51 Stage ring oscillator ??????????????????????????? 12 IV.1 Delay distribution histogram...

  4. Touch sensors based on planar liquid crystal-gated-organic field-effect transistors

    SciTech Connect (OSTI)

    Seo, Jooyeok; Lee, Chulyeon; Han, Hyemi; Lee, Sooyong; Nam, Sungho; Kim, Youngkyoo, E-mail: ykimm@knu.ac.kr [Organic Nanoelectronics Laboratory, Department of Chemical Engineering and Graduate School of Applied Chemical Engineering, Kyungpook National University, Daegu, 702-701 (Korea, Republic of); Kim, Hwajeong [Organic Nanoelectronics Laboratory, Department of Chemical Engineering and Graduate School of Applied Chemical Engineering, Kyungpook National University, Daegu, 702-701 (Korea, Republic of); Priority Research Center, Research Institute of Advanced Energy Technology, Kyungpook National University, Daegu, 702-701 (Korea, Republic of); Lee, Joon-Hyung [School of Materials Science and Engineering, Kyungpook National University, Daegu, 702-701 (Korea, Republic of); Park, Soo-Young; Kang, Inn-Kyu [Department of Polymer Science and Engineering and Graduate School of Applied Chemical Engineering, Kyungpook National University, Daegu, 702-701 (Korea, Republic of)

    2014-09-15T23:59:59.000Z

    We report a tactile touch sensor based on a planar liquid crystal-gated-organic field-effect transistor (LC-g-OFET) structure. The LC-g-OFET touch sensors were fabricated by forming the 10 ?m thick LC layer (4-cyano-4{sup ?}-pentylbiphenyl - 5CB) on top of the 50 nm thick channel layer (poly(3-hexylthiophene) - P3HT) that is coated on the in-plane aligned drain/source/gate electrodes (indium-tin oxide - ITO). As an external physical stimulation to examine the tactile touch performance, a weak nitrogen flow (83.3 ?l/s) was employed to stimulate the LC layer of the touch device. The LC-g-OFET device exhibited p-type transistor characteristics with a hole mobility of 1.5 cm{sup 2}/Vs, but no sensing current by the nitrogen flow touch was measured at sufficiently high drain (V{sub D}) and gate (V{sub G}) voltages. However, a clear sensing current signal was detected at lower voltages, which was quite sensitive to the combination of V{sub D} and V{sub G}. The best voltage combination was V{sub D} = ?0.2 V and V{sub G} = ?1 V for the highest ratio of signal currents to base currents (i.e., signal-to-noise ratio). The change in the LC alignment upon the nitrogen flow touch was assigned as the mechanism for the present LC-g-OFET touch sensors.

  5. Second generation PFB for advanced power generation

    SciTech Connect (OSTI)

    Robertson, A.; Van Hook, J.

    1995-11-01T23:59:59.000Z

    Research is being conducted under a United States Department of Energy (USDOE) contract to develop a new type of coal-fueled plant for electric power generation. This new type of plant-called an advanced or second-generation pressurized fluidized bed combustion (APFBC) plant-offers the promise of 45-percent efficiency (HHV), with emissions and a cost of electricity that are significantly lower than conventional pulverized-coal-fired plants with scrubbers. This paper summarizes the pilot plant R&D work being conducted to develop this new type of plant. Although pilot plant testing is still underway, preliminary estimates indicate the commercial plant Will perform better than originally envisioned. Efficiencies greater than 46 percent are now being predicted.

  6. Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

    SciTech Connect (OSTI)

    Sanne, A.; Movva, H. C. P.; Kang, S.; McClellan, C.; Corbet, C. M.; Banerjee, S. K. [Microelectronics Research Center, University of Texas, Austin, Texas 78758 (United States)

    2014-02-24T23:59:59.000Z

    We investigate poly(methyl methacrylate) (PMMA) as a low thermal budget organic gate dielectric for graphene field effect-transistors (GFETs) based on a simple process flow. We show that high temperature baking steps above the glass transition temperature (?130?°C) can leave a self-assembled, thin PMMA film on graphene, where we get a gate dielectric almost for “free” without additional atomic layer deposition type steps. Electrical characterization of GFETs with PMMA as a gate dielectric yields a dielectric constant of k?=?3.0. GFETs with thinner PMMA dielectrics have a lower dielectric constant due to decreased polarization arising from neutralization of dipoles and charged carriers as baking temperatures increase. The leakage through PMMA gate dielectric increases with decreasing dielectric thickness and increasing electric field. Unlike conventional high-k gate dielectrics, such low-k organic gate dielectrics are potentially attractive for devices such as the proposed Bilayer pseudoSpin Field-Effect Transistor or flexible high speed graphene electronics.

  7. Bit error rate tester using fast parallel generation of linear recurring sequences

    DOE Patents [OSTI]

    Pierson, Lyndon G.; Witzke, Edward L.; Maestas, Joseph H.

    2003-05-06T23:59:59.000Z

    A fast method for generating linear recurring sequences by parallel linear recurring sequence generators (LRSGs) with a feedback circuit optimized to balance minimum propagation delay against maximal sequence period. Parallel generation of linear recurring sequences requires decimating the sequence (creating small contiguous sections of the sequence in each LRSG). A companion matrix form is selected depending on whether the LFSR is right-shifting or left-shifting. The companion matrix is completed by selecting a primitive irreducible polynomial with 1's most closely grouped in a corner of the companion matrix. A decimation matrix is created by raising the companion matrix to the (n*k).sup.th power, where k is the number of parallel LRSGs and n is the number of bits to be generated at a time by each LRSG. Companion matrices with 1's closely grouped in a corner will yield sparse decimation matrices. A feedback circuit comprised of XOR logic gates implements the decimation matrix in hardware. Sparse decimation matrices can be implemented with minimum number of XOR gates, and therefore a minimum propagation delay through the feedback circuit. The LRSG of the invention is particularly well suited to use as a bit error rate tester on high speed communication lines because it permits the receiver to synchronize to the transmitted pattern within 2n bits.

  8. Design and optimisation of quantum logic circuits for a three-qubit Deutsch-Jozsa algorithm implemented with optically-controlled, solid-state quantum logic gates

    E-Print Network [OSTI]

    A. Del Duce; S. Savory; P. Bayvel

    2009-10-09T23:59:59.000Z

    We analyse the design and optimisation of quantum logic circuits suitable for the experimental demonstration of a three-qubit quantum computation prototype based on optically-controlled, solid-state quantum logic gates. In these gates, the interaction between two qubits carried by the electron-spin of donors is mediated by the optical excitation of a control particle placed in their proximity. First, we use a geometrical approach for analysing the entangling characteristics of these quantum gates. Then, using a genetic programming algorithm, we develop circuits for the refined Deutsch-Jozsa algorithm investigating different strategies for obtaining short total computational times. We test two separate approaches based on using different sets of entangling gates with the shortest possible gate computation time which, however, does not introduce leakage of quantum information to the control particles. The first set exploits fast approximations of controlled-phase gates as entangling gates, while the other one arbitrary entangling gates with a shorter gate computation time compared to the first set. We have identified circuits with consistently shorter total computation times when using controlled-phase gates.

  9. Laser beam generating apparatus

    DOE Patents [OSTI]

    Warner, B.E.; Duncan, D.B.

    1993-12-28T23:59:59.000Z

    Laser beam generating apparatus including a septum segment disposed longitudinally within the tubular structure of the apparatus. The septum provides for radiatively dissipating heat buildup within the tubular structure and for generating relatively uniform laser beam pulses so as to minimize or eliminate radial pulse delays (the chevron effect). 11 figures.

  10. Laser beam generating apparatus

    DOE Patents [OSTI]

    Warner, B.E.; Duncan, D.B.

    1994-02-15T23:59:59.000Z

    Laser beam generating apparatus including a septum segment disposed longitudinally within the tubular structure of the apparatus is described. The septum provides for radiatively dissipating heat buildup within the tubular structure and for generating relatively uniform laser beam pulses so as to minimize or eliminate radial pulse delays (the chevron effect). 7 figures.

  11. features Utility Generator

    E-Print Network [OSTI]

    Chang, Shih-Fu

    #12;#12;#12;#12;features function utility Training Pool Utility Generator Per-frame function content utility classes utility classes utility Tree Decision Generator Module Utility Clustering Adaptive Content Classification Loop features content VO selection & Utility Selector content features Real

  12. Event generator overview

    SciTech Connect (OSTI)

    Pang, Y.

    1997-12-01T23:59:59.000Z

    Due to their ability to provide detailed and quantitative predictions, the event generators have become an important part of studying relativistic heavy ion physics and of designing future experiments. In this talk, the author will briefly summarize recent progress in developing event generators for the relativistic heavy ion collisions.

  13. Improved solid aerosol generator

    DOE Patents [OSTI]

    Prescott, D.S.; Schober, R.K.; Beller, J.

    1988-07-19T23:59:59.000Z

    An improved solid aerosol generator used to produce a gas borne stream of dry, solid particles of predetermined size and concentration. The improved solid aerosol generator nebulizes a feed solution of known concentration with a flow of preheated gas and dries the resultant wet heated aerosol in a grounded, conical heating chamber, achieving high recovery and flow rates. 2 figs.

  14. Internal split field generator

    DOE Patents [OSTI]

    Thundat; Thomas George (Knoxville, TN); Van Neste, Charles W. (Kingston, TN); Vass, Arpad Alexander (Oak Ridge, TN)

    2012-01-03T23:59:59.000Z

    A generator includes a coil of conductive material. A stationary magnetic field source applies a stationary magnetic field to the coil. An internal magnetic field source is disposed within a cavity of the coil to apply a moving magnetic field to the coil. The stationary magnetic field interacts with the moving magnetic field to generate an electrical energy in the coil.

  15. Dual amplitude pulse generator for radiation detectors

    DOE Patents [OSTI]

    Hoggan, Jerry M. (Idaho Falls, ID); Kynaston, Ronnie L. (Blackfoot, ID); Johnson, Larry O. (Island Park, ID)

    2001-01-01T23:59:59.000Z

    A pulsing circuit for producing an output signal having a high amplitude pulse and a low amplitude pulse may comprise a current source for providing a high current signal and a low current signal. A gate circuit connected to the current source includes a trigger signal input that is responsive to a first trigger signal and a second trigger signal. The first trigger signal causes the gate circuit to connect the high current signal to a pulse output terminal whereas the second trigger signal causes the gate circuit to connect the low current signal to the pulse output terminal.

  16. On the interest of carbon-coated plasma reactor for advanced gate stack etching processes

    SciTech Connect (OSTI)

    Ramos, R.; Cunge, G.; Joubert, O. [Freescale Semiconductor Inc., 850 Rue Jean Monnet, 38921 Crolles Cedex (France) and Laboratoire des Technologies de la Microelectronique, CNRS, 17 Rue des Martyrs (c/o CEA-LETI), 38054 Grenoble Cedex 9 (France); Laboratoire des Technologies de la Microelectronique, CNRS, 17 Rue des Martyrs (c/o CEA-LETI), 38054 Grenoble Cedex 9 (France)

    2007-03-15T23:59:59.000Z

    In integrated circuit fabrication the most wide spread strategy to achieve acceptable wafer-to-wafer reproducibility of the gate stack etching process is to dry-clean the plasma reactor walls between each wafer processed. However, inherent exposure of the reactor walls to fluorine-based plasma leads to formation and accumulation of nonvolatile fluoride residues (such as AlF{sub x}) on reactor wall surfaces, which in turn leads to process drifts and metallic contamination of wafers. To prevent this while keeping an Al{sub 2}O{sub 3} reactor wall material, a coating strategy must be used, in which the reactor is coated by a protective layer between wafers. It was shown recently that deposition of carbon-rich coating on the reactor walls allows improvements of process reproducibility and reactor wall protection. The authors show that this strategy results in a higher ion-to-neutral flux ratio to the wafer when compared to other strategies (clean or SiOCl{sub x}-coated reactors) because the carbon walls load reactive radical densities while keeping the same ion current. As a result, the etching rates are generally smaller in a carbon-coated reactor, but a highly anisotropic etching profile can be achieved in silicon and metal gates, whose etching is strongly ion assisted. Furthermore, thanks to the low density of Cl atoms in the carbon-coated reactor, silicon etching can be achieved almost without sidewall passivation layers, allowing fine critical dimension control to be achieved. In addition, it is shown that although the O atom density is also smaller in the carbon-coated reactor, the selectivity toward ultrathin gate oxides is not reduced dramatically. Furthermore, during metal gate etching over high-k dielectric, the low level of parasitic oxygen in the carbon-coated reactor also allows one to minimize bulk silicon reoxidation through HfO{sub 2} high-k gate dielectric. It is then shown that the BCl{sub 3} etching process of the HfO{sub 2} high-k material is highly selective toward the substrate in the carbon-coated reactor, and the carbon-coating strategy thus allows minimizing the silicon recess of the active area of transistors. The authors eventually demonstrate that the carbon-coating strategy drastically reduces on-wafer metallic contamination. Finally, the consumption of carbon from the reactor during the etching process is discussed (and thus the amount of initial deposit that is required to protect the reactor walls) together with the best way of cleaning the reactor after a silicon etching process.

  17. Respiration Induced Heart Motion and Indications of Gated Delivery for Left-Sided Breast Irradiation

    SciTech Connect (OSTI)

    Qi, X. Sharon, E-mail: xiangrong.qi@ucdenver.edu [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Hu, Angela [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Wang Kai [Department of Radiation Oncology, Medical College of Wisconsin, Milwaukee, WI (United States); Newman, Francis [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Crosby, Marcus; Hu Bin; White, Julia; Li, X. Allen [Department of Radiation Oncology, Medical College of Wisconsin, Milwaukee, WI (United States)

    2012-04-01T23:59:59.000Z

    Purpose: To investigate respiration-induced heart motion for left-sided breast irradiation using a four-dimensional computed tomography (4DCT) technique and to determine novel indications to assess heart motion and identify breast patients who may benefit from a gated treatment. Methods and Materials: Images of 4DCT acquired during free breathing for 20 left-sided breast cancer patients, who underwent whole breast irradiation with or without regional nodal irradiation, were analyzed retrospectively. Dose distributions were reconstructed in the phases of 0%, 20%, and 50%. The intrafractional heart displacement was measured in three selected transverse CT slices using D{sub LAD} (the distance from left ascending aorta to a fixed line [connecting middle point of sternum and the body] drawn on each slice) and maximum heart depth (MHD, the distance of the forefront of the heart to the line). Linear regression analysis was used to correlate these indices with mean heart dose and heart dose volume at different breathing phases. Results: Respiration-induced heart displacement resulted in observable variations in dose delivered to the heart. During a normal free-breathing cycle, heart-induced motion D{sub LAD} and MHD changed up to 9 and 11 mm respectively, resulting in up to 38% and 39% increases of mean doses and V{sub 25.2} for the heart. MHD and D{sub LAD} were positively correlated with mean heart dose and heart dose volume. Respiratory-adapted gated treatment may better spare heart and ipsilateral-lung compared with the conventional non-gated plan in a subset of patients with large D{sub LAD} or MHD variations. Conclusion: Proposed indices offer novel assessment of heart displacement based on 4DCT images. MHD and D{sub LAD} can be used independently or jointly as selection criteria for respiratory gating procedure before treatment planning. Patients with great intrafractional MHD variations or tumor(s) close to the diaphragm may particularly benefit from the gated treatment.

  18. Shaft generator transmissions

    SciTech Connect (OSTI)

    NONE

    1995-11-01T23:59:59.000Z

    Economical on-board power can be generated from two-stroke, low-speed engines by installing a multistage hollow-shaft gearbox on the propeller intermediate shaft to drive the generator. Gearbox manufacturer Asug, based in Dessau, Germany, has designed units specifically for this purpose. The Asug shaft generator drive concept for generator drives at the front end of the engine is designed to reduce installation costs and uses an integrated engine-gearbox foundation. The complete propulsion system, consisting of the diesel engine, gear with coupling and generator, can be completely or partially preassembled outside the ship`s engine room to reduce onboard assembly time. A separate foundation for this arrangement is not necessary. The company offers a full range of gearboxes to generate power from 500 kW up to 5000 kW. Gearboxes driven from the forward engine end often incorporate an additional gear stage to gain energy from an exhaust turbine. This arrangement feeds part of the exhaust energy back into the system to increase efficiency. Latest installations of Asug shaft generator gears are in container ships and cargo/container ships built in Turkey and China.

  19. Wind power generating system

    SciTech Connect (OSTI)

    Schachle, Ch.; Schachle, E. C.; Schachle, J. R.; Schachle, P. J.

    1985-03-12T23:59:59.000Z

    Normally feathered propeller blades of a wind power generating system unfeather in response to the actuation of a power cylinder that responds to actuating signals. Once operational, the propellers generate power over a large range of wind velocities. A maximum power generation design point signals a feather response of the propellers so that once the design point is reached no increase in power results, but the system still generates power. At wind speeds below this maximum point, propeller speed and power output optimize to preset values. The propellers drive a positive displacement pump that in turn drives a positive displacement motor of the swash plate type. The displacement of the motor varies depending on the load on the system, with increasing displacement resulting in increasing propeller speeds, and the converse. In the event of dangerous but not clandestine problems developing in the system, a control circuit dumps hydraulic pressure from the unfeathering cylinder resulting in a predetermined, lower operating pressure produced by the pump. In the event that a problem of potentially cladestine consequence arises, the propeller unfeathering cylinder immediately unloads. Upon startup, a bypass around the motor is blocked, applying a pressure across the motor. The motor drives the generator until the generator reaches a predetermined speed whereupon the generator is placed in circuit with a utility grid and permitted to motor up to synchronous speed.

  20. Compact neutron generator

    DOE Patents [OSTI]

    Leung, Ka-Ngo; Lou, Tak Pui

    2005-03-22T23:59:59.000Z

    A compact neutron generator has at its outer circumference a toroidal shaped plasma chamber in which a tritium (or other) plasma is generated. A RF antenna is wrapped around the plasma chamber. A plurality of tritium ion beamlets are extracted through spaced extraction apertures of a plasma electrode on the inner surface of the toroidal plasma chamber and directed inwardly toward the center of neutron generator. The beamlets pass through spaced acceleration and focusing electrodes to a neutron generating target at the center of neutron generator. The target is typically made of titanium tubing. Water is flowed through the tubing for cooling. The beam can be pulsed rapidly to achieve ultrashort neutron bursts. The target may be moved rapidly up and down so that the average power deposited on the surface of the target may be kept at a reasonable level. The neutron generator can produce fast neutrons from a T-T reaction which can be used for luggage and cargo interrogation applications. A luggage or cargo inspection system has a pulsed T-T neutron generator or source at the center, surrounded by associated gamma detectors and other components for identifying explosives or other contraband.

  1. Use of Slip Ring Induction Generator for Wind Power Generation

    E-Print Network [OSTI]

    K Y Patil; D S Chavan

    Wind energy is now firmly established as a mature technology for electricity generation. There are different types of generators that can be used for wind energy generation, among which Slip ring Induction generator proves to be more advantageous. To analyse application of Slip ring Induction generator for wind power generation, an experimental model is developed and results are studied. As power generation from natural sources is the need today and variable speed wind energy is ample in amount in India, it is necessary to study more beneficial options for wind energy generating techniques. From this need a model is developed by using Slip ring Induction generator which is a type of Asynchronous generator.

  2. Graph Generator Survey

    SciTech Connect (OSTI)

    Lothian, Josh [ORNL; Powers, Sarah S [ORNL; Sullivan, Blair D [ORNL; Baker, Matthew B [ORNL; Schrock, Jonathan [ORNL; Poole, Stephen W [ORNL

    2013-12-01T23:59:59.000Z

    The benchmarking effort within the Extreme Scale Systems Center at Oak Ridge National Laboratory seeks to provide High Performance Computing benchmarks and test suites of interest to the DoD sponsor. The work described in this report is a part of the effort focusing on graph generation. A previously developed benchmark, SystemBurn, allowed the emulation of dierent application behavior profiles within a single framework. To complement this effort, similar capabilities are desired for graph-centric problems. This report examines existing synthetic graph generator implementations in preparation for further study on the properties of their generated synthetic graphs.

  3. Synthetic guide star generation

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA) [Castro Valley, CA; Page, Ralph H. (Castro Valley, CA) [Castro Valley, CA; Ebbers, Christopher A. (Livermore, CA) [Livermore, CA; Beach, Raymond J. (Livermore, CA) [Livermore, CA

    2008-06-10T23:59:59.000Z

    A system for assisting in observing a celestial object and providing synthetic guide star generation. A lasing system provides radiation at a frequency at or near 938 nm and radiation at a frequency at or near 1583 nm. The lasing system includes a fiber laser operating between 880 nm and 960 nm and a fiber laser operating between 1524 nm and 1650 nm. A frequency-conversion system mixes the radiation and generates light at a frequency at or near 589 nm. A system directs the light at a frequency at or near 589 nm toward the celestial object and provides synthetic guide star generation.

  4. Generating electricity from viruses

    SciTech Connect (OSTI)

    Lee, Seung-Wuk

    2013-10-31T23:59:59.000Z

    Berkeley Lab's Seung-Wuk Lee discusses "Generating electricity from viruses" in this Oct. 28, 2013 talk, which is part of a Science at the Theater event entitled Eight Big Ideas.

  5. Energy and Mass Generation

    E-Print Network [OSTI]

    Burra G. Sidharth

    2010-03-11T23:59:59.000Z

    Modifications in the energy momentum dispersion laws due to a noncommutative geometry, have been considered in recent years. We examine the oscillations of extended objects in this perspective and find that there is now a "generation" of energy.

  6. Contextualizing generative design

    E-Print Network [OSTI]

    Arida, Saeed, 1977-

    2004-01-01T23:59:59.000Z

    Generative systems have been widely used to produce two- and three-dimensional constructs, in an attempt to escape from our preconceptions and pre-existing spatial language. The challenge is to use this mechanism in ...

  7. Monte Carlo event generators

    SciTech Connect (OSTI)

    Frixione, Stefano [INFN, Sezione di Genova, Via Dodecaneso 33, 16146 Genova (Italy)

    2005-10-06T23:59:59.000Z

    I review recent progress in the physics of parton shower Monte Carlos, emphasizing the ideas which allow the inclusion of higher-order matrix elements into the framework of event generators.

  8. Generating electricity from viruses

    ScienceCinema (OSTI)

    Lee, Seung-Wuk

    2014-06-23T23:59:59.000Z

    Berkeley Lab's Seung-Wuk Lee discusses "Generating electricity from viruses" in this Oct. 28, 2013 talk, which is part of a Science at the Theater event entitled Eight Big Ideas.

  9. Oscillating fluid power generator

    SciTech Connect (OSTI)

    Morris, David C

    2014-02-25T23:59:59.000Z

    A system and method for harvesting the kinetic energy of a fluid flow for power generation with a vertically oriented, aerodynamic wing structure comprising one or more airfoil elements pivotably attached to a mast. When activated by the moving fluid stream, the wing structure oscillates back and forth, generating lift first in one direction then in the opposite direction. This oscillating movement is converted to unidirectional rotational movement in order to provide motive power to an electricity generator. Unlike other oscillating devices, this device is designed to harvest the maximum aerodynamic lift forces available for a given oscillation cycle. Because the system is not subjected to the same intense forces and stresses as turbine systems, it can be constructed less expensively, reducing the cost of electricity generation. The system can be grouped in more compact clusters, be less evident in the landscape, and present reduced risk to avian species.

  10. Vector generator scan converter

    DOE Patents [OSTI]

    Moore, J.M.; Leighton, J.F.

    1988-02-05T23:59:59.000Z

    High printing speeds for graphics data are achieved with a laser printer by transmitting compressed graphics data from a main processor over an I/O channel to a vector generator scan converter which reconstructs a full graphics image for input to the laser printer through a raster data input port. The vector generator scan converter includes a microprocessor with associated microcode memory containing a microcode instruction set, a working memory for storing compressed data, vector generator hardware for drawing a full graphic image from vector parameters calculated by the microprocessor, image buffer memory for storing the reconstructed graphics image and an output scanner for reading the graphics image data and inputting the data to the printer. The vector generator scan converter eliminates the bottleneck created by the I/O channel for transmitting graphics data from the main processor to the laser printer, and increases printer speed up to thirty fold. 7 figs.

  11. Vector generator scan converter

    DOE Patents [OSTI]

    Moore, James M. (Livermore, CA); Leighton, James F. (Livermore, CA)

    1990-01-01T23:59:59.000Z

    High printing speeds for graphics data are achieved with a laser printer by transmitting compressed graphics data from a main processor over an I/O (input/output) channel to a vector generator scan converter which reconstructs a full graphics image for input to the laser printer through a raster data input port. The vector generator scan converter includes a microprocessor with associated microcode memory containing a microcode instruction set, a working memory for storing compressed data, vector generator hardward for drawing a full graphic image from vector parameters calculated by the microprocessor, image buffer memory for storing the reconstructed graphics image and an output scanner for reading the graphics image data and inputting the data to the printer. The vector generator scan converter eliminates the bottleneck created by the I/O channel for transmitting graphics data from the main processor to the laser printer, and increases printer speed up to thirty fold.

  12. Steam generator tube failures

    SciTech Connect (OSTI)

    MacDonald, P.E.; Shah, V.N.; Ward, L.W.; Ellison, P.G.

    1996-04-01T23:59:59.000Z

    A review and summary of the available information on steam generator tubing failures and the impact of these failures on plant safety is presented. The following topics are covered: pressurized water reactor (PWR), Canadian deuterium uranium (CANDU) reactor, and Russian water moderated, water cooled energy reactor (VVER) steam generator degradation, PWR steam generator tube ruptures, the thermal-hydraulic response of a PWR plant with a faulted steam generator, the risk significance of steam generator tube rupture accidents, tubing inspection requirements and fitness-for-service criteria in various countries, and defect detection reliability and sizing accuracy. A significant number of steam generator tubes are defective and are removed from service or repaired each year. This wide spread damage has been caused by many diverse degradation mechanisms, some of which are difficult to detect and predict. In addition, spontaneous tube ruptures have occurred at the rate of about one every 2 years over the last 20 years, and incipient tube ruptures (tube failures usually identified with leak detection monitors just before rupture) have been occurring at the rate of about one per year. These ruptures have caused complex plant transients which have not always been easy for the reactor operators to control. Our analysis shows that if more than 15 tubes rupture during a main steam line break, the system response could lead to core melting. Although spontaneous and induced steam generator tube ruptures are small contributors to the total core damage frequency calculated in probabilistic risk assessments, they are risk significant because the radionuclides are likely to bypass the reactor containment building. The frequency of steam generator tube ruptures can be significantly reduced through appropriate and timely inspections and repairs or removal from service.

  13. Implementation of controlled phase shift gates and Collins version of Deutsch-Jozsa algorithm on a quadrupolar spin-7/2 nucleus using non-adiabatic geometric phases

    E-Print Network [OSTI]

    T. Gopinath; Anil Kumar

    2009-09-22T23:59:59.000Z

    In this work Controlled phase shift gates are implemented on a qaudrupolar system, by using non-adiabatic geometric phases. A general procedure is given, for implementing controlled phase shift gates in an 'N' level system. The utility of such controlled phase shift gates, is demonstrated here by implementing 3-qubit Deutsch-Jozsa algorithm on a 7/2 quadrupolar nucleus oriented in a liquid crystal matrix.

  14. Patient radiation dose in prospectively gated axial CT coronary angiography and retrospectively gated helical technique with a 320-detector row CT scanner

    SciTech Connect (OSTI)

    Seguchi, Shigenobu; Aoyama, Takahiko; Koyama, Shuji; Fujii, Keisuke; Yamauchi-Kawaura, Chiyo [Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan) and Department of Medical Technology, Nagoya Daini Red Cross Hospital, Myouken-chou, Showa-ku, Nagoya 466-8650 (Japan); Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan); Section of Radiological Protection, National Institute of Radiological Sciences, Anagawa, Inage-ku, Chiba 263-8555 (Japan); Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan)

    2010-11-15T23:59:59.000Z

    Purpose: The aim of this study was to evaluate radiation dose to patients undergoing computed tomography coronary angiography (CTCA) for prospectively gated axial (PGA) technique and retrospectively gated helical (RGH) technique. Methods: Radiation doses were measured for a 320-detector row CT scanner (Toshiba Aquilion ONE) using small sized silicon-photodiode dosimeters, which were implanted at various tissue and organ positions within an anthropomorphic phantom for a standard Japanese adult male. Output signals from photodiode dosimeters were read out on a personal computer, from which organ and effective doses were computed according to guidelines published in the International Commission on Radiological Protection Publication 103. Results: Organs that received high doses were breast, followed by lung, esophagus, and liver. Breast doses obtained with PGA technique and a phase window width of 16% at a simulated heart rate of 60 beats per minute were 13 mGy compared to 53 mGy with RGH technique using electrocardiographically dependent dose modulation at the same phase window width as that in PGA technique. Effective doses obtained in this case were 4.7 and 20 mSv for the PGA and RGH techniques, respectively. Conversion factors of dose length product to the effective dose in PGA and RGH were 0.022 and 0.025 mSv mGy{sup -1} cm{sup -1} with a scan length of 140 mm. Conclusions: CTCA performed with PGA technique provided a substantial effective dose reduction, i.e., 70%-76%, compared to RGH technique using the dose modulation at the same phase windows as those in PGA technique. Though radiation doses in CTCA with RGH technique were the same level as, or some higher than, those in conventional coronary angiography (CCA), the use of PGA technique reduced organ and effective doses to levels less than CCA except for breast dose.

  15. Perfect Computational Equivalence between Quantum Turing Machines and Finitely Generated Uniform Quantum Circuit Families

    E-Print Network [OSTI]

    Harumichi Nishimura; Masanao Ozawa

    2008-12-05T23:59:59.000Z

    In order to establish the computational equivalence between quantum Turing machines (QTMs) and quantum circuit families (QCFs) using Yao's quantum circuit simulation of QTMs, we previously introduced the class of uniform QCFs based on an infinite set of elementary gates, which has been shown to be computationally equivalent to the polynomial-time QTMs (with appropriate restriction of amplitudes) up to bounded error simulation. This result implies that the complexity class BQP introduced by Bernstein and Vazirani for QTMs equals its counterpart for uniform QCFs. However, the complexity classes ZQP and EQP for QTMs do not appear to equal their counterparts for uniform QCFs. In this paper, we introduce a subclass of uniform QCFs, the finitely generated uniform QCFs, based on finite number of elementary gates and show that the class of finitely generated uniform QCFs is perfectly equivalent to the class of polynomial-time QTMs; they can exactly simulate each other. This naturally implies that BQP as well as ZQP and EQP equal the corresponding complexity classes of the finitely generated uniform QCFs.

  16. MHD Generating system

    DOE Patents [OSTI]

    Petrick, Michael (Joliet, IL); Pierson, Edward S. (Chicago, IL); Schreiner, Felix (Mokena, IL)

    1980-01-01T23:59:59.000Z

    According to the present invention, coal combustion gas is the primary working fluid and copper or a copper alloy is the electrodynamic fluid in the MHD generator, thereby eliminating the heat exchangers between the combustor and the liquid-metal MHD working fluids, allowing the use of a conventional coalfired steam bottoming plant, and making the plant simpler, more efficient and cheaper. In operation, the gas and liquid are combined in a mixer and the resulting two-phase mixture enters the MHD generator. The MHD generator acts as a turbine and electric generator in one unit wherein the gas expands, drives the liquid across the magnetic field and thus generates electrical power. The gas and liquid are separated, and the available energy in the gas is recovered before the gas is exhausted to the atmosphere. Where the combustion gas contains sulfur, oxygen is bubbled through a side loop to remove sulfur therefrom as a concentrated stream of sulfur dioxide. The combustor is operated substoichiometrically to control the oxide level in the copper.

  17. Superconducting thermoelectric generator

    DOE Patents [OSTI]

    Metzger, J.D.; El-Genk, M.S.

    1994-01-01T23:59:59.000Z

    Thermoelectricity is produced by applying a temperature differential to dissimilar electrically conducting or semiconducting materials, thereby producing a voltage that is proportional to the temperature difference. Thermoelectric generators use this effect to directly convert heat into electricity; however, presently-known generators have low efficiencies due to the production of high currents which in turn cause large resistive heating losses. Some thermoelectric generators operate at efficiencies between 4% and 7% in the 800{degrees} to 1200{degrees}C range. According to its major aspects and bradly stated, the present invention is an apparatus and method for producing electricity from heat. In particular, the invention is a thermoelectric generator that juxtaposes a superconducting material and a semiconducting material - so that the superconducting and the semiconducting materials touch - to convert heat energy into electrical energy without resistive losses in the temperature range below the critical temperature of the superconducting material. Preferably, an array of superconducting material is encased in one of several possible configurations within a second material having a high thermal conductivity, preferably a semiconductor, to form a thermoelectric generator.

  18. Universal conductance fluctuations in electrolyte-gated SrTiO{sub 3} nanostructures

    SciTech Connect (OSTI)

    Stanwyck, Sam W. [Department of Applied Physics, Stanford University, Stanford, California 94305 (United States)] [Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Gallagher, P.; Williams, J. R.; Goldhaber-Gordon, David [Department of Physics, Stanford University, Stanford, California 94305 (United States)] [Department of Physics, Stanford University, Stanford, California 94305 (United States)

    2013-11-18T23:59:59.000Z

    We report low-temperature magnetoconductance measurements of a patterned two-dimensional electron system at the surface of strontium titanate, gated by an ionic liquid electrolyte. We observe universal conductance fluctuations, a signature of phase-coherent transport in mesoscopic devices. From the universal conductance fluctuations, we extract an electron dephasing rate linear in temperature, characteristic of electron-electron interaction in a disordered conductor. The dephasing rate has a temperature-independent offset, which could possibly be explained by the presence of unscreened local magnetic moments in the sample.

  19. Excitation spectrum as a resource for efficient two-qubit entangling gates

    E-Print Network [OSTI]

    Dmitry Solenov; Sophia E. Economou; Thomas L. Reinecke

    2014-04-03T23:59:59.000Z

    Physical systems representing qubits typically have one or more accessible quantum states in addition to the two states that encode the qubit. We demonstrate that active involvement of such auxiliary states can be beneficial in constructing entangling two-qubit operations. We investigate the general case of two multi-state quantum systems coupled via a quantum resonator. The approach is illustrated with the examples of three systems: self-assembled InAs/GaAs quantum dots, NV-centers in diamond, and superconducting transmon qubits. Fidelities of the gate operations are calculated based on numerical simulations of each system.

  20. Field programmable gate array-assigned complex-valued computation and its limits

    SciTech Connect (OSTI)

    Bernard-Schwarz, Maria, E-mail: maria.bernardschwarz@ni.com [National Instruments, Ganghoferstrasse 70b, 80339 Munich (Germany); Institute of Applied Physics, TU Wien, Wiedner Hauptstrasse 8, 1040 Wien (Austria); Zwick, Wolfgang; Klier, Jochen [National Instruments, Ganghoferstrasse 70b, 80339 Munich (Germany); Wenzel, Lothar [National Instruments, 11500 N MOPac Expy, Austin, Texas 78759 (United States); Gröschl, Martin [Institute of Applied Physics, TU Wien, Wiedner Hauptstrasse 8, 1040 Wien (Austria)

    2014-09-15T23:59:59.000Z

    We discuss how leveraging Field Programmable Gate Array (FPGA) technology as part of a high performance computing platform reduces latency to meet the demanding real time constraints of a quantum optics simulation. Implementations of complex-valued operations using fixed point numeric on a Virtex-5 FPGA compare favorably to more conventional solutions on a central processing unit. Our investigation explores the performance of multiple fixed point options along with a traditional 64 bits floating point version. With this information, the lowest execution times can be estimated. Relative error is examined to ensure simulation accuracy is maintained.

  1. Spherical neutron generator

    DOE Patents [OSTI]

    Leung, Ka-Ngo

    2006-11-21T23:59:59.000Z

    A spherical neutron generator is formed with a small spherical target and a spherical shell RF-driven plasma ion source surrounding the target. A deuterium (or deuterium and tritium) ion plasma is produced by RF excitation in the plasma ion source using an RF antenna. The plasma generation region is a spherical shell between an outer chamber and an inner extraction electrode. A spherical neutron generating target is at the center of the chamber and is biased negatively with respect to the extraction electrode which contains many holes. Ions passing through the holes in the extraction electrode are focused onto the target which produces neutrons by D-D or D-T reactions.

  2. Thermoacoustic magnetohydrodynamic electrical generator

    DOE Patents [OSTI]

    Wheatley, J.C.; Swift, G.W.; Migliori, A.

    1984-11-16T23:59:59.000Z

    A thermoacoustic magnetohydrodynamic electrical generator includes an intrinsically irreversible thermoacoustic heat engine coupled to a magnetohydrodynamic electrical generator. The heat engine includes an electrically conductive liquid metal as the working fluid and includes two heat exchange and thermoacoustic structure assemblies which drive the liquid in a push-pull arrangement to cause the liquid metal to oscillate at a resonant acoustic frequency on the order of 1000 Hz. The engine is positioned in the field of a magnet and is oriented such that the liquid metal oscillates in a direction orthogonal to the field of the magnet, whereby an alternating electrical potential is generated in the liquid metal. Low-loss, low-inductance electrical conductors electrically connected to opposite sides of the liquid metal conduct an output signal to a transformer adapted to convert the low-voltage, high-current output signal to a more usable higher voltage, lower current signal.

  3. Hyperbolic Graph Generator

    E-Print Network [OSTI]

    Aldecoa, Rodrigo; Krioukov, Dmitri

    2015-01-01T23:59:59.000Z

    Networks representing many complex systems in nature and society share some common structural properties like heterogeneous degree distributions and strong clustering. Recent research on network geometry has shown that those real networks can be adequately modeled as random geometric graphs in hyperbolic spaces. In this paper, we present a computer program to generate such graphs. Besides real-world-like networks, the program can generate random graphs from other well-known graph ensembles, such as the soft configuration model, random geometric graphs on a circle, or Erd\\H{o}s-R\\'enyi random graphs. The simulations show a good match between the expected values of different network structural properties and the corresponding empirical values measured in generated graphs, confirming the accurate behavior of the program.

  4. Thermoacoustic magnetohydrodynamic electrical generator

    DOE Patents [OSTI]

    Wheatley, John C. (Los Alamos, NM); Swift, Gregory W. (Los Alamos, NM); Migliori, Albert (Santa Fe, NM)

    1986-01-01T23:59:59.000Z

    A thermoacoustic magnetohydrodynamic electrical generator includes an intrinsically irreversible thermoacoustic heat engine coupled to a magnetohydrodynamic electrical generator. The heat engine includes an electrically conductive liquid metal as the working fluid and includes two heat exchange and thermoacoustic structure assemblies which drive the liquid in a push-pull arrangement to cause the liquid metal to oscillate at a resonant acoustic frequency on the order of 1,000 Hz. The engine is positioned in the field of a magnet and is oriented such that the liquid metal oscillates in a direction orthogonal to the field of the magnet, whereby an alternating electrical potential is generated in the liquid metal. Low-loss, low-inductance electrical conductors electrically connected to opposite sides of the liquid metal conduct an output signal to a transformer adapted to convert the low-voltage, high-current output signal to a more usable higher voltage, lower current signal.

  5. External split field generator

    DOE Patents [OSTI]

    Thundat, Thomas George (Knoxville, TN); Van Neste, Charles W. (Kingston, TN); Vass, Arpad Alexander (Oak Ridge, TN)

    2012-02-21T23:59:59.000Z

    A generator includes a coil disposed about a core. A first stationary magnetic field source may be disposed on a first end portion of the core and a second stationary magnetic field source may be disposed on a second end portion of core. The first and second stationary magnetic field sources apply a stationary magnetic field to the coil. An external magnetic field source may be disposed outside the coil to apply a moving magnetic field to the coil. Electrical energy is generated in response to an interaction between the coil, the moving magnetic field, and the stationary magnetic field.

  6. Options for Generating Steam Efficiently

    E-Print Network [OSTI]

    Ganapathy, V.

    This paper describes how plant engineers can efficiently generate steam when there are steam generators and Heat Recovery Steam Generators in their plant. The process consists of understanding the performance characteristics of the various equipment...

  7. The Generation Effect and Memory

    E-Print Network [OSTI]

    Rosner, Zachary Alexander

    2012-01-01T23:59:59.000Z

    M. A. (2007). The generation effect: A meta- analyticBjork, R. A. (1988). The generation effect: Support for aE. J. (2012). The next generation: The value of reminding.

  8. Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors

    SciTech Connect (OSTI)

    Goswami, Arunesh; Trew, Robert J.; Bilbro, Griff L. [ECE Department, Box 7911, North Carolina State University, Raleigh, North Carolina 27695-7911 (United States)

    2014-10-28T23:59:59.000Z

    A physics based model of the gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors is demonstrated. The model is based on the space charge limited current flow dominated by the effects of deep traps in the InAlN surface layer. The model predicts accurately the gate-leakage measurement data of the N-polar InAlN/GaN device with InAlN cap layer. In the pinch-off state, the gate leakage current conduction through the surface of the device in the drain access region dominates the current flow through the two dimensional electron gas channel. One deep trap level and two levels of shallow traps are extracted by fitting the model results with measurement data.

  9. Electron Transport Behavior on Gate Length Scaling in Sub-50 nm GaAs Metal Semiconductor Field Effect Transistors

    SciTech Connect (OSTI)

    Han, Jaeheon [Department of Electronic Engineering, Kangnam University, 111 Gugal-dong, Giheung-gu, Yongin-city, Gyeonggi-do, Korea 446-702 (Korea, Republic of)

    2011-12-23T23:59:59.000Z

    Short channel GaAs Metal Semiconductor Field Effect Transistors (MESFETs) have been fabricated with gate length to 20 nm, in order to examine the characteristics of sub-50 nm MESFET scaling. Here the rise in the measured transconductance is mainly attributed to electron velocity overshoot. For gate lengths below 40 nm, however, the transconductance drops suddenly. The behavior of velocity overshoot and its degradation is investigated and simulated by using a transport model based on the retarded Langevin equation (RLE). This indicates the existence of a minimum acceleration length needed for the carriers to reach the overshoot velocity. The argument shows that the source resistance must be included as an internal element, or appropriate boundary condition, of relative importance in any model where the gate length is comparable to the inelastic mean free path of the carriers.

  10. Gate Access

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert Southwest Region service area. TheEPSCIResearch to sponsor Brazilianmaterials

  11. Gate Access

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickr Flickr Editor'sshort version) Thelong version)short

  12. Code Generation on Steroids: Enhancing COTS Code Generators via Generative Aspects

    E-Print Network [OSTI]

    Ryder, Barbara G.

    Code Generation on Steroids: Enhancing COTS Code Generators via Generative Aspects Cody Henthorne tilevich@cs.vt.edu Abstract Commercial of-the-shelf (COTS) code generators have become an integral part of modern commercial software development. Programmers use code generators to facilitate many tedious

  13. Generating Resources Advisory Committee

    E-Print Network [OSTI]

    Capital and O&M Cost Estimates 10:15 am Reciprocating Engine Technologies John Robbins of Wartsila North) Capital Cost ($/kW) Heat Rate (Btu/kWh) Ramp Rate (Minutes) Biggest Most expensive Least Efficient SlowestGenerating Resources Advisory Committee February 27, 2014 Steven Simmons and Gillian Charles

  14. New wave generation

    E-Print Network [OSTI]

    Mercier, Matthieu J; Mathur, Manikandan; Gostiaux, Louis; Peacock, Thomas; Dauxois, Thierry

    2015-01-01T23:59:59.000Z

    We present the results of a combined experimental and numerical study of the generation of internal waves using the novel internal wave generator design of Gostiaux et al. (2007). This mechanism, which involves a tunable source comprised of oscillating plates, has so far been used for a few fundamental studies of internal waves, but its full potential has yet to be realized. Our studies reveal that this approach is capable of producing a wide variety of two-dimensional wave fields, including plane waves, wave beams and discrete vertical modes in finite-depth stratifications. The effects of discretization by a finite number of plates, forcing amplitude and angle of propagation are investigated, and it is found that the method is remarkably efficient at generating a complete wave field despite forcing only one velocity component in a controllable manner. We furthermore find that the nature of the radiated wave field is well predicted using Fourier transforms of the spatial structure of the wave generator.

  15. Iridium 191-M generator

    DOE Patents [OSTI]

    Treves, Salvador (Newton, MA); Cheng, Chris C. (Brookline, MA)

    1988-03-08T23:59:59.000Z

    Potassium osmate, of the formula K.sub.2 Os O.sub.2 (OH).sub.4), used to make a column for the generation of Ir-191 m, which is used in first pass angiography to detect cardiac defects in patients.

  16. Energy generation in stars

    E-Print Network [OSTI]

    B. V. Vasiliev

    2001-10-29T23:59:59.000Z

    It is a current opinion that thermonuclear fusion is the main source of the star activity. It is shown below that this source is not unique. There is another electrostatic mechanism of the energy generation which accompanies thermonuclear fusion. Probably, this approach can solve the solar neutrino problem.

  17. Fuel cell generator

    DOE Patents [OSTI]

    Isenberg, Arnold O. (Forest Hills, PA)

    1983-01-01T23:59:59.000Z

    High temperature solid oxide electrolyte fuel cell generators which allow controlled leakage among plural chambers in a sealed housing. Depleted oxidant and fuel are directly reacted in one chamber to combust remaining fuel and preheat incoming reactants. The cells are preferably electrically arranged in a series-parallel configuration.

  18. Nuclear Power Generating Facilities (Maine)

    Broader source: Energy.gov [DOE]

    The first subchapter of the statute concerning Nuclear Power Generating Facilities provides for direct citizen participation in the decision to construct any nuclear power generating facility in...

  19. Next-Generation Photovoltaic Technologies

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Next-Generation Photovoltaic Technologies Next-Generation Photovoltaic Technologies Print Monday, 06 February 2012 15:48 Organic solar cells based on the polymerfullerene bulk...

  20. Arnold Schwarzenegger DISTRIBUTED GENERATION DRIVETRAIN

    E-Print Network [OSTI]

    Arnold Schwarzenegger Governor DISTRIBUTED GENERATION DRIVETRAIN FOR WINDPOWER APPLICATION Prepared GENERATION DRIVETRAIN FOR WINDPOWER APPLICATION EISG AWARDEE Dehlsen Associates, LLC 7985 Armas Canyon Road

  1. Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

    SciTech Connect (OSTI)

    Pud, S.; Li, J.; Offenhäusser, A.; Vitusevich, S. A., E-mail: s.vitusevich@fz-juelich.de [Peter Grünberg Institute (PGI-8), Forschungszentrum Jülich, 52425 Jülich (Germany); Gasparyan, F. [Peter Grünberg Institute (PGI-8), Forschungszentrum Jülich, 52425 Jülich (Germany); Department of Semiconductor Physics and Microelectronics, Yerevan State University, 1 Alex Manoogian St., 0025 Yerevan (Armenia); Petrychuk, M. [Radiophysics Faculty, T. Shevchenko National University of Kyiv, 60 Volodymyrska St., 01601 Kyiv (Ukraine)

    2014-06-21T23:59:59.000Z

    Liquid-gated silicon nanowire (NW) field effect transistors (FETs) are fabricated and their transport and dynamic properties are investigated experimentally and theoretically. Random telegraph signal (RTS) fluctuations were registered in the nanolength channel FETs and used for the experimental and theoretical analysis of transport properties. The drain current and the carrier interaction processes with a single trap are analyzed using a quantum-mechanical evaluation of carrier distribution in the channel and also a classical evaluation. Both approaches are applied to treat the experimental data and to define an appropriate solution for describing the drain current behavior influenced by single trap resulting in RTS fluctuations in the Si NW FETs. It is shown that quantization and tunneling effects explain the behavior of the electron capture time on the single trap. Based on the experimental data, parameters of the single trap were determined. The trap is located at a distance of about 2?nm from the interface Si/SiO{sub 2} and has a repulsive character. The theory of dynamic processes in liquid-gated Si NW FET put forward here is in good agreement with experimental observations of transport in the structures and highlights the importance of quantization in carrier distribution for analyzing dynamic processes in the nanostructures.

  2. Gate Metal-Induced Diffusion and Interface Reactions in Hf Oxide Films on Si

    SciTech Connect (OSTI)

    Goncharova, Lyudmila V.; Dalponte, Mateus; Celik, Ozgur; Garfunkel, Eric; Gustafsson, Torgny [Departments of Physics and Chemistry, and Laboratory for Surface Modification, Rutgers University, Piscataway, NJ 08854 (United States); Lysaght, Pat S.; Bersuker, Gennadi I. [Sematech, Austin, Texas 78741 (United States)

    2007-09-26T23:59:59.000Z

    When metal electrodes are deposited on a high-{kappa} metal-oxide/SiO{sub 2}/Si stack, chemical interactions may occur both at the metal/high-{kappa} and the high-{kappa}/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO{sub 2}/SiO{sub 2}/Si stacks causes reduction of the SiO{sub 2} interfacial layer and (to a lesser extent) the HfO{sub 2} layer. Silicon atoms initially present in the interfacial SiO{sub 2} layer incorporate into the bottom of the high-{kappa} layer. Some evidence for titanium-silicon interdiffusion through the high-{kappa} film in the presence of a titanium gate in crystalline HfO{sub 2} films is also reported.

  3. Characterization of a gated fiber-optic-coupled detector for application in clinical electron beam dosimetry

    SciTech Connect (OSTI)

    Tanyi, James A.; Nitzling, Kevin D.; Lodwick, Camille J.; Huston, Alan L.; Justus, Brian L. [Department of Radiation Medicine, Oregon Health and Science University, Portland, Oregon 97239 (United States) and Department of Nuclear Engineering and Radiation Health Physics, Oregon State University, Corvallis, Oregon 97331 (United States); Department of Nuclear Engineering and Radiation Health Physics, Oregon State University, Corvallis, Oregon 97331 (United States); Optical Sciences Division, Naval Research Laboratory, Washington, DC 20375 (United States)

    2011-02-15T23:59:59.000Z

    Purpose: Assessment of the fundamental dosimetric characteristics of a novel gated fiber-optic-coupled dosimetry system for clinical electron beam irradiation. Methods: The response of fiber-optic-coupled dosimetry system to clinical electron beam, with nominal energy range of 6-20 MeV, was evaluated for reproducibility, linearity, and output dependence on dose rate, dose per pulse, energy, and field size. The validity of the detector system's response was assessed in correspondence with a reference ionization chamber. Results: The fiber-optic-coupled dosimetry system showed little dependence to dose rate variations (coefficient of variation {+-}0.37%) and dose per pulse changes (with 0.54% of reference chamber measurements). The reproducibility of the system was {+-}0.55% for dose fractions of {approx}100 cGy. Energy dependence was within {+-}1.67% relative to the reference ionization chamber for the 6-20 MeV nominal electron beam energy range. The system exhibited excellent linear response (R{sup 2}=1.000) compared to reference ionization chamber in the dose range of 1-1000 cGy. The output factors were within {+-}0.54% of the corresponding reference ionization chamber measurements. Conclusions: The dosimetric properties of the gated fiber-optic-coupled dosimetry system compare favorably to the corresponding reference ionization chamber measurements and show considerable potential for applications in clinical electron beam radiotherapy.

  4. Nucleotide-induced conformational motions and transmembrane gating dynamics in a bacterial ABC transporter

    E-Print Network [OSTI]

    Holger Flechsig

    2014-02-07T23:59:59.000Z

    ATP-binding cassette (ABC) transporters are integral membrane proteins that mediate the exchange of diverse substrates across membranes powered by ATP hydrolysis. We report results of coarse-grained dynamical simulations performed for the bacterial heme transporter HmuUV. Based on the nucleotide-free structure, we have constructed a ligand-elastic-network description for this protein and investigated ATP-induced conformational motions in structurally resolved computer experiments. As we found, interactions with nucleotides resulted in generic motions which are functional and robust. Upon binding of ATP-mimicking ligands the structure changed from a conformation in which the nucleotide-binding domains formed an open shape, to a conformation in which they were found in tight contact and the transmembrane domains were rotated. The heme channel was broadened in the ligand-bound complex and the gate to the cytoplasm, which was closed in the nucleotide-free conformation, was rendered open by a mechanism that involved tilting motions of essential transmembrane helices. Based on our findings we propose that the HmuUV transporter behaves like a `simple' mechanical device in which, induced by binding of ATP ligands, linear motions of the nucleotide-binding domains are translated into rotational motions and internal tilting dynamics of the transmembrane domains that control gating inside the heme pathway.

  5. Conductance modulation in topological insulator Bi{sub 2}Se{sub 3} thin films with ionic liquid gating

    SciTech Connect (OSTI)

    Son, Jaesung; Banerjee, Karan; Yang, Hyunsoo, E-mail: eleyang@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)] [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Brahlek, Matthew; Koirala, Nikesh; Oh, Seongshik [Department of Physics and Astronomy, Rutgers, The State University of New Jersey, 136 Frelinghuysen Road, Piscataway, New Jersey 08854 (United States)] [Department of Physics and Astronomy, Rutgers, The State University of New Jersey, 136 Frelinghuysen Road, Piscataway, New Jersey 08854 (United States); Lee, Seoung-Ki [School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of) [School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Ahn, Jong-Hyun [School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)] [School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)

    2013-11-18T23:59:59.000Z

    A Bi{sub 2}Se{sub 3} topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material.

  6. P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology

    E-Print Network [OSTI]

    Boyer, Edmond

    is obtained. P-type and N-type vertical TFTs have shown symmetric electrical characteristics. DifferentP-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low) ABSTRACT P-type and N-type multi-gate vertical thin film transistors (vertical TFTs) have been fabricated

  7. In Proceedings of the 8th IEEE International Conference on Tools with Artificial Intelligence, Toulouse, France, 1996. GATE: An Environment to Support Research and Development

    E-Print Network [OSTI]

    Gaizauskas, Rob

    describe a software environment to support research and development in natural language (NL) engineering, Toulouse, France, 1996. GATE: An Environment to Support Research and Development in Natural Language. This environment ­ GATE (General Architecture for Text Engineering) ­ aims to advance research in the area

  8. In Proceedings of the 8th IEEE International Conference on Tools with Artificial Intelligence, Toulouse, France, 1996. GATE: An Environment to Support Research and Development

    E-Print Network [OSTI]

    Gaizauskas, Rob

    describe a software environment to support research and development in natural language (NL) engineering, Toulouse, France, 1996. GATE: An Environment to Support Research and Development in Natural Language. This environment -- GATE (General Architecture for Text Engineering) -- aims to advance research in the area

  9. GENERATION AND RANDOM GENERATION: FROM SIMPLE GROUPS TO MAXIMAL SUBGROUPS

    E-Print Network [OSTI]

    Burness, Tim

    GENERATION AND RANDOM GENERATION: FROM SIMPLE GROUPS TO MAXIMAL SUBGROUPS TIMOTHY C. BURNESS of generators for G. It is well known that d(G) = 2 for all (non-abelian) finite simple groups. We prove that d investigate the random generation of maximal subgroups of simple and almost simple groups. By applying

  10. GASIFICATION FOR DISTRIBUTED GENERATION

    SciTech Connect (OSTI)

    Ronald C. Timpe; Michael D. Mann; Darren D. Schmidt

    2000-05-01T23:59:59.000Z

    A recent emphasis in gasification technology development has been directed toward reduced-scale gasifier systems for distributed generation at remote sites. The domestic distributed power generation market over the next decade is expected to be 5-6 gigawatts per year. The global increase is expected at 20 gigawatts over the next decade. The economics of gasification for distributed power generation are significantly improved when fuel transport is minimized. Until recently, gasification technology has been synonymous with coal conversion. Presently, however, interest centers on providing clean-burning fuel to remote sites that are not necessarily near coal supplies but have sufficient alternative carbonaceous material to feed a small gasifier. Gasifiers up to 50 MW are of current interest, with emphasis on those of 5-MW generating capacity. Internal combustion engines offer a more robust system for utilizing the fuel gas, while fuel cells and microturbines offer higher electric conversion efficiencies. The initial focus of this multiyear effort was on internal combustion engines and microturbines as more realistic near-term options for distributed generation. In this project, we studied emerging gasification technologies that can provide gas from regionally available feedstock as fuel to power generators under 30 MW in a distributed generation setting. Larger-scale gasification, primarily coal-fed, has been used commercially for more than 50 years to produce clean synthesis gas for the refining, chemical, and power industries. Commercial-scale gasification activities are under way at 113 sites in 22 countries in North and South America, Europe, Asia, Africa, and Australia, according to the Gasification Technologies Council. Gasification studies were carried out on alfalfa, black liquor (a high-sodium waste from the pulp industry), cow manure, and willow on the laboratory scale and on alfalfa, black liquor, and willow on the bench scale. Initial parametric tests evaluated through reactivity and product composition were carried out on thermogravimetric analysis (TGA) equipment. These tests were evaluated and then followed by bench-scale studies at 1123 K using an integrated bench-scale fluidized-bed gasifier (IBG) which can be operated in the semicontinuous batch mode. Products from tests were solid (ash), liquid (tar), and gas. Tar was separated on an open chromatographic column. Analysis of the gas product was carried out using on-line Fourier transform infrared spectroscopy (FT-IR). For selected tests, gas was collected periodically and analyzed using a refinery gas analyzer GC (gas chromatograph). The solid product was not extensively analyzed. This report is a part of a search into emerging gasification technologies that can provide power under 30 MW in a distributed generation setting. Larger-scale gasification has been used commercially for more than 50 years to produce clean synthesis gas for the refining, chemical, and power industries, and it is probable that scaled-down applications for use in remote areas will become viable. The appendix to this report contains a list, description, and sources of currently available gasification technologies that could be or are being commercially applied for distributed generation. This list was gathered from current sources and provides information about the supplier, the relative size range, and the status of the technology.

  11. COMMITTEE ON APPROPRIATIONS DAVE OBEY (D-WI), CHAIRMAN

    E-Print Network [OSTI]

    and grant competitions and awards, and formula grant allocations must be posted on a special website created. · The Government Accountabilit

  12. Dave Thomson, 29th September 2010 Crown copyright Met Office

    E-Print Network [OSTI]

    Office #12;NN A MM E Developed by the Met Office following the Chernobyl accident to give emergency response dispersion predictions for nuclear incidentsfor nuclear incidents Model now has much wider range of applications Nuclear and chemical releases Volcanic ash Disease spread (foot and mouth, blue tongue disease

  13. A Perspective on MGI Dave McDowell, Executive Director

    E-Print Network [OSTI]

    Nair, Sankar

    for Universities · Innovation infrastructure (shared resources and cyber infrastructure for materials data, infrastructure, communications, security · Economic Impact ­ future workforce, 21st century economy #12;Cabinet · Strategic Industry Relations · Distributed facilities · Web portal, search/access · Teaming #12;Some

  14. Topical Lunch Minutes 1. Dave Dieterich: the mission of CCSF

    E-Print Network [OSTI]

    Angenent, Lars T.

    are not equal to healthy buildings a. Is green housing actually healthy housing? i. Asthma 1. Mold and dust

  15. SPATIO-TEMPORAL WEATHER MODELS Chris Glasbey & Dave Allcroft

    E-Print Network [OSTI]

    Glasbey, Chris

    #12;QUESTION 1: If the Pentland Hills were covered with solar panels how would energy output vary? Solar radiation was measured at 10 sites every 10 minutes for a month 2 #12;All data 3 #12;QUESTION 2 variables · Gaussian or non-Gaussian · univariate or multivariate For example: Solar data 6 #12;Spatio

  16. Dr. Dave Moody to Lead the Carlsbad Field Office

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed Newcatalyst phasesDataTranslocationDiurnal CycleDonald1 Jul 20022 InPress) Dr.

  17. Dr. Dave Moody to Lead the Carlsbad Field Office

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed Newcatalyst phasesDataTranslocationDiurnal CycleDonald1 Jul 20022 InPress) Dr.DOENews

  18. Dr. Dave Moody to Lead the Carlsbad Field Office

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed Newcatalyst phasesDataTranslocationDiurnal CycleDonald1 Jul 20022 InPress)

  19. Eshan V. Dave,1 Andrew F. Braham,2

    E-Print Network [OSTI]

    Paulino, Glaucio H.

    of a Flattened Indirect Tension Test for Asphalt Concrete ABSTRACT: The indirect tension test (IDT) is frequently is proposed for indirect tension testing of asphalt concrete. In place of the standard loading heads of three asphalt concrete mixtures in two flattened configurations. This integrated modeling and testing

  20. David P. Feldman hornacek.coa.edu/dave

    E-Print Network [OSTI]

    Feldman, David P.

    Grant Consortium Education and Seed Research Program. "A Project- based Class in Residential Windpower

  1. Microsoft Word - QER Dave Caldwell 21 April 2014.doc

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector General Office0-72.pdfGeorgeDoesn't32 MasterAcquisiti ---- Contra See Acqu ion Guide No.Notice

  2. Update and Expansion of the Center of Automotive Technology Excellence Under the Graduate Automotive Technology Education (GATE) Program at the University of Tennessee, Knoxville

    SciTech Connect (OSTI)

    Irick, David

    2012-08-30T23:59:59.000Z

    The Graduate Automotive Technology Education (GATE) Center at the University of Tennessee, Knoxville has completed its seventh year of operation under this agreement, its thirteenth year in total. During this period the Center has involved eleven GATE Fellows and three GATE Research Assistants in preparing them to contribute to advanced automotive technologies in the center’s focus area: Advanced Hybrid Propulsion and Control Systems. In addition to the impact that the Center has had on the students and faculty involved, the presence of the center has led to the acquisition of resources that probably would not have been obtained if the GATE Center had not existed. Significant industry interaction such as equipment donations, and support for GATE students has been realized. The value of the total resources brought to the university (including related research contracts) exceeds $2,000,000.

  3. Calibrated vapor generator source

    DOE Patents [OSTI]

    Davies, J.P.; Larson, R.A.; Goodrich, L.D.; Hall, H.J.; Stoddard, B.D.; Davis, S.G.; Kaser, T.G.; Conrad, F.J.

    1995-09-26T23:59:59.000Z

    A portable vapor generator is disclosed that can provide a controlled source of chemical vapors, such as, narcotic or explosive vapors. This source can be used to test and calibrate various types of vapor detection systems by providing a known amount of vapors to the system. The vapor generator is calibrated using a reference ion mobility spectrometer. A method of providing this vapor is described, as follows: explosive or narcotic is deposited on quartz wool, placed in a chamber that can be heated or cooled (depending on the vapor pressure of the material) to control the concentration of vapors in the reservoir. A controlled flow of air is pulsed over the quartz wool releasing a preset quantity of vapors at the outlet. 10 figs.

  4. High power microwave generator

    DOE Patents [OSTI]

    Ekdahl, C.A.

    1983-12-29T23:59:59.000Z

    A microwave generator efficiently converts the energy of an intense relativistic electron beam (REB) into a high-power microwave emission using the Smith-Purcell effect which is related to Cerenkov radiation. Feedback for efficient beam bunching and high gain is obtained by placing a cylindrical Smith-Purcell transmission grating on the axis of a toroidal resonator. High efficiency results from the use of a thin cold annular highly-magnetized REB that is closely coupled to the resonant structure.

  5. QCD (&) event generators

    SciTech Connect (OSTI)

    Skands, Peter Z.; /Fermilab

    2005-07-01T23:59:59.000Z

    Recent developments in QCD phenomenology have spurred on several improved approaches to Monte Carlo event generation, relative to the post-LEP state of the art. In this brief review, the emphasis is placed on approaches for (1) consistently merging fixed-order matrix element calculations with parton shower descriptions of QCD radiation, (2) improving the parton shower algorithms themselves, and (3) improving the description of the underlying event in hadron collisions.

  6. Fuel cell generator energy dissipator

    DOE Patents [OSTI]

    Veyo, Stephen Emery (Murrysville, PA); Dederer, Jeffrey Todd (Valencia, PA); Gordon, John Thomas (Ambridge, PA); Shockling, Larry Anthony (Pittsburgh, PA)

    2000-01-01T23:59:59.000Z

    An apparatus and method are disclosed for eliminating the chemical energy of fuel remaining in a fuel cell generator when the electrical power output of the fuel cell generator is terminated. During a generator shut down condition, electrically resistive elements are automatically connected across the fuel cell generator terminals in order to draw current, thereby depleting the fuel

  7. Milliwatt Generator Project

    SciTech Connect (OSTI)

    Latimer, T.W.; Rinehart, G.H.

    1992-05-01T23:59:59.000Z

    This report covers progress on the Milliwatt Generator Project from April 1986 through March 1988. Activities included fuel processing and characterization, production of heat sources, fabrication of pressure-burst test units, compatibility studies, impact testing, and examination of surveillance units. The major task of the Los Alamos Milliwatt Generator Project is to fabricate MC2893A heat sources (4.0 W) for MC2730A radioisotope thermoelectric generators (RTGS) and MC3599 heat sources (4.5 W) for MC3500 RTGs. The MWG Project interfaces with the following contractors: Sandia National Laboratories, Albuquerque (designer); E.I. du Pont de Nemours and Co. (Inc.), Savannah River Plant (fuel); Monsanto Research Corporation, Mound Facility (metal hardware); and General Electric Company, Neutron Devices Department (RTGs). In addition to MWG fabrication activities, Los Alamos is involved in (1) fabrication of pressure-burst test units, (2) compatibility testing and evaluation, (3) examination of surveillance units, and (4) impact testing and subsequent examination of compatibility and surveillance units.

  8. Modular Isotopic Thermoelectric Generator

    SciTech Connect (OSTI)

    Schock, Alfred

    1981-04-03T23:59:59.000Z

    Advanced RTG concepts utilizing improved thermoelectric materials and converter concepts are under study at Fairchild for DOE. The design described here is based on DOE's newly developed radioisotope heat source, and on an improved silicon-germanium material and a multicouple converter module under development at Syncal. Fairchild's assignment was to combine the above into an attractive power system for use in space, and to assess the specific power and other attributes of that design. The resultant design is highly modular, consisting of standard RTG slices, each producing ~24 watts at the desired output voltage of 28 volt. Thus, the design could be adapted to various space missions over a wide range of power levels, with little or no redesign. Each RTG slice consists of a 250-watt heat source module, eight multicouple thermoelectric modules, and standard sections of insulator, housing, radiator fins, and electrical circuit. The design makes it possible to check each thermoelectric module for electrical performance, thermal contact, leaktightness, and performance stability, after the generator is fully assembled; and to replace any deficient modules without disassembling the generator or perturbing the others. The RTG end sections provide the spring-loaded supports required to hold the free-standing heat source stack together during launch vibration. Details analysis indicates that the design offers a substantial improvement in specific power over the present generator of RTGs, using the same heat source modules. There are three copies in the file.

  9. Optical harmonic generator

    DOE Patents [OSTI]

    Summers, Mark A. (Livermore, CA); Eimerl, David (Pleasanton, CA); Boyd, Robert D. (Livermore, CA)

    1985-01-01T23:59:59.000Z

    A pair of uniaxial birefringent crystal elements are fixed together to form a serially arranged, integral assembly which, alternatively, provides either a linearly or elliptically polarized second-harmonic output wave or a linearly polarized third-harmonic output wave. The "extraordinary" or "e" directions of the crystal elements are oriented in the integral assembly to be in quadrature (90.degree.). For a second-harmonic generation in the Type-II-Type-II angle tuned case, the input fundamental wave has equal amplitude "o" and "e" components. For a third-harmonic generation, the input fundamental wave has "o" and "e" components whose amplitudes are in a ratio of 2:1 ("o":"e" reference first crystal). In the typical case of a linearly polarized input fundamental wave this can be accomplished by simply rotating the crystal assembly about the input beam direction by 10.degree.. For both second and third harmonic generation input precise phase-matching is achieved by tilting the crystal assembly about its two sensitive axes ("o").

  10. Optical harmonic generator

    DOE Patents [OSTI]

    Summers, M.A.; Eimerl, D.; Boyd, R.D.

    1982-06-10T23:59:59.000Z

    A pair of uniaxial birefringent crystal elements are fixed together to form a serially arranged, integral assembly which, alternatively, provides either a linearly or elliptically polarized second-harmonic output wave or a linearly polarized third-harmonic output wave. The extraordinary or e directions of the crystal elements are oriented in the integral assembly to be in quadrature (90/sup 0/). For a second-harmonic generation in the Type-II-Type-II angle tuned case, the input fundamental wave has equal amplitude o and e components. For a third-harmonic generation, the input fundamental wave has o and e components whose amplitudes are in a ratio of 2:1 (o:e reference first crystal). In the typical case of a linearly polarized input fundamental wave this can be accomplished by simply rotating the crystal assembly about the input beam direction by 10/sup 0/. For both second and third harmonic generation input precise phase-matching is achieved by tilting the crystal assembly about its two sensitive axeses (o).

  11. Ignition distributor voltage generator

    SciTech Connect (OSTI)

    Boyer, J.A.

    1986-11-04T23:59:59.000Z

    This patent describes a voltage pulse generator and ignition distributor comprising, a base, a shaft rotatably supported by the base, a distributor cap supported by the base having a center electrode and circumferentially spaced outer electrodes. The pulse generator and ignition distribution also include a first rotor driven by the shaft formed of electrical insulating material having electrically conductive means connected to the center terminal and a portion that rotates past the outer electrodes. The portion of the electrically conductive means that rotates past the outer electrodes is spaced from the outer electrodes to form a gap therebetween. A voltage pulse generator comprises a second rotor driven by the shaft, at least one permanent magnet and an annular pickup coil supported by the base. The pickup coil has inner turns and outer turns, the beginning turn of the inner turns connected to a first lead and the last turn of the outer turns connected to a second lead, the outer turns enclosing the inner turns. The pickup coil also has a circuit connected directly between the second lead and ground which is operative to provide a direct conductive path to ground for high frequency energy capacitively coupled to the outer turns from the gap discharge between the electrically conductive means of the first rotor and an outer electrode, the outer turns forming a grounded shield for the inner turns.

  12. 1.800.ASK.DTFA www.DaveThomasFoundationForAdoption.org Dave Thomas Foundation for Adoption

    E-Print Network [OSTI]

    Jones, Michelle

    as victims of child abuse, neglect or abandonment. More than 129,000 children in foster care are available Care Adoption Awareness FACT SHEET THE CAUSE: November is National Adoption Awareness Month. It has in America's foster care system who are available for adoption and wait for permanent families. THE NEED

  13. Characterization of the pentacene thin-film transistors with an epoxy resin-based polymeric gate insulator

    E-Print Network [OSTI]

    Boyer, Edmond

    Characterization of the pentacene thin-film transistors with an epoxy resin-based polymeric gate seeking desirable semi- conductor/insulator combinations [3]. In this study, we adopted an epoxy resin fabricated and characterized. SU-8, a reliable epoxy-based pho- toresist, is tested as a potential highly

  14. Voltage-and calcium-dependent gating of TMEM16A/Ano1 chloride channels are physically

    E-Print Network [OSTI]

    Voltage- and calcium-dependent gating of TMEM16A/Ano1 chloride channels are physically coupled by the first intracellular loop Qinghuan Xiaoa , Kuai Yua , Patricia Perez-Cornejob , Yuanyuan Cuia , Jorge in the first intracellular loop that is crucial for both Ca2+ and voltage sensing. Deleting 448EAVK

  15. IEEE ELECTRON DEVICE LETTERS, VOL. 29, NO. 2, FEBRUARY 2008 183 Externally Assembled Gate-All-Around Carbon

    E-Print Network [OSTI]

    -All-Around Carbon Nanotube Field-Effect Transistor Zhihong Chen, Member, IEEE, Damon Farmer, Sheng Xu, Roy Gordon USA (e-mail: zchen@us.ibm.com; avouris@ us.ibm.com). D. Farmer is with the School of Engineering demonstrate a gate-all-around single- wall carbon nanotube field-effect transistor. This is the first suc

  16. Graduate Automotive Technology Education (GATE) Program: Center of Automotive Technology Excellence in Advanced Hybrid Vehicle Technology at West Virginia University

    SciTech Connect (OSTI)

    Nigle N. Clark

    2006-12-31T23:59:59.000Z

    This report summarizes the technical and educational achievements of the Graduate Automotive Technology Education (GATE) Center at West Virginia University (WVU), which was created to emphasize Advanced Hybrid Vehicle Technology. The Center has supported the graduate studies of 17 students in the Department of Mechanical and Aerospace Engineering and the Lane Department of Computer Science and Electrical Engineering. These students have addressed topics such as hybrid modeling, construction of a hybrid sport utility vehicle (in conjunction with the FutureTruck program), a MEMS-based sensor, on-board data acquisition for hybrid design optimization, linear engine design and engine emissions. Courses have been developed in Hybrid Vehicle Design, Mobile Source Powerplants, Advanced Vehicle Propulsion, Power Electronics for Automotive Applications and Sensors for Automotive Applications, and have been responsible for 396 hours of graduate student coursework. The GATE program also enhanced the WVU participation in the U.S. Department of Energy Student Design Competitions, in particular FutureTruck and Challenge X. The GATE support for hybrid vehicle technology enhanced understanding of hybrid vehicle design and testing at WVU and encouraged the development of a research agenda in heavy-duty hybrid vehicles. As a result, WVU has now completed three programs in hybrid transit bus emissions characterization, and WVU faculty are leading the Transportation Research Board effort to define life cycle costs for hybrid transit buses. Research and enrollment records show that approximately 100 graduate students have benefited substantially from the hybrid vehicle GATE program at WVU.

  17. Test Set Reordering Using the Gate Exhaustive Test Metric Kyoung Youn Cho and Edward J. McCluskey

    E-Print Network [OSTI]

    Stanford University

    Test Set Reordering Using the Gate Exhaustive Test Metric Kyoung Youn Cho and Edward J. Mc kycho@crc.stanford.edu Abstract When a test set size is larger than desired, some patterns must be dropped. This paper presents a systematic method to reduce test set size; the method reorders a test set

  18. IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 27, NO. 9, SEPTEMBER 2012 4153 C Universal Gate Driver Integrated Circuit

    E-Print Network [OSTI]

    Tolbert, Leon M.

    IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 27, NO. 9, SEPTEMBER 2012 4153 A 200 C Universal Gate in extreme environment applica- tions, including automotive, aerospace, geothermal, nuclear, and well logging. For successful realization of such high-temperature power conversion modules, the associated control electronics

  19. The role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh vacuum study

    E-Print Network [OSTI]

    Tobin, Roger G.

    The role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh conditions that elucidate the role of oxygen in the functioning of silicon carbide field-effect gas sensors hydrogen-depleted state; competition between hydrogen oxidation and hydrogen diffusion to metal/ oxide

  20. Abstract--Bias temperature instability, hot-carrier injection, and gate-oxide wearout will cause severe lifetime degradation in

    E-Print Network [OSTI]

    Lipasti, Mikko H.

    Abstract--Bias temperature instability, hot-carrier injection, and gate-oxide wearout will cause mechanisms are bias temperature instability (BTI) [1] and hot-carrier injection (HCI) [2], both of which can is compounded by thermal feedback, since active devices located at die hot spots operate at an elevated

  1. International Conference on Internet Computing. Las Vegas, Nevada, p. 620 626. 23 26 June MONSTERS AT THE GATE

    E-Print Network [OSTI]

    Jansen, James

    , (2) Web agents are searching for a wide variety of information, with 60% of the terms used being: terms exactly as entered by the given user. Data Analysis With these three fields, we located initial June 2003. MONSTERS AT THE GATE: WHEN SOFTBOTS VISIT WEB SEARCH ENGINES Bernard J. Jansen and Amanda S

  2. 210 nature neuroscience volume 5 no 3 march 2002 Calcium entry into cells through voltage-gated Ca2+ channels

    E-Print Network [OSTI]

    Palczewski, Krzysztof

    voltage-gated Ca2+ channels initiates a wide range of cellular processes including protein phosphorylation, gene expression and neurotransmitter release1. Neuronal Ca2+ channels consist of a pore-forming 1 by neurotransmitters inhibits Cav2.1 and Cav2.2 channels, which mediate P/Q-type and N- type Ca2+ currents

  3. Design of a scanning gate microscope for mesoscopic electron systems in a cryogen-free dilution refrigerator

    E-Print Network [OSTI]

    Goldhaber-Gordon, David

    for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park report on our design of a scanning gate microscope housed in a cryogen-free dilution refrigera- tor for improved energy resolution for spec- troscopic measurements, as well as for investigating physical effects

  4. 250 IEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMS, VOL. 4, NO. 4, AUGUST 2010 Digital Microfluidic Logic Gates and Their

    E-Print Network [OSTI]

    Chakrabarty, Krishnendu

    Microfluidic Logic Gates and Their Application to Built-in Self-Test of Lab-on-Chip Yang Zhao, Student Member for microfluidic lab-on-chip. Robust testing methods are therefore needed to ensure correct results. Previously prone. We present a built-in self-test (BIST) method for digital microfluidic lab-on-chip. This method

  5. Built-in Self-Test and Fault Diagnosis for Lab-on-Chip Using Digital Microfluidic Logic Gates

    E-Print Network [OSTI]

    Chakrabarty, Krishnendu

    Built-in Self-Test and Fault Diagnosis for Lab-on-Chip Using Digital Microfluidic Logic Gates Yang University, Durham, NC 27708, USA Abstract Dependability is an important system attribute for microfluidic are cumbersome and error-prone. We present a built-in self-test (BIST) method for digital microfluidic lab

  6. ANALOG-DECODER EXPERIMENTS WITH SUBTHRESHOLD CMOS SOFT-GATES Matthias Frey, Hans-Andrea Loeliger, Felix Lustenberger

    E-Print Network [OSTI]

    Loeliger, Hans-Andrea

    in a low-cost semi-custom 0.8 µm technology. These soft-gates allow, in particular, the real- ization given in [6] and [7, 8]; see also [9]. Since 1998, much effort has been spent towards turning BiCMOS technology. Winstead et al. [11] have fabricated a decoder of the (8,4,4) Hamming code in 0

  7. Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature

    SciTech Connect (OSTI)

    Hopf, T.; Vassilevski, K. V., E-mail: k.vasilevskiy@ncl.ac.uk; Escobedo-Cousin, E.; King, P. J.; Wright, N. G.; O'Neill, A. G.; Horsfall, A. B.; Goss, J. P. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Wells, G. H.; Hunt, M. R. C. [Department of Physics, Durham University, Durham DH1 3LE (United Kingdom)

    2014-10-21T23:59:59.000Z

    Top-gated graphene field-effect transistors (GFETs) have been fabricated using bilayer epitaxial graphene grown on the Si-face of 4H-SiC substrates by thermal decomposition of silicon carbide in high vacuum. Graphene films were characterized by Raman spectroscopy, Atomic Force Microscopy, Scanning Tunnelling Microscopy, and Hall measurements to estimate graphene thickness, morphology, and charge transport properties. A 27?nm thick Al{sub 2}O{sub 3} gate dielectric was grown by atomic layer deposition with an e-beam evaporated Al seed layer. Electrical characterization of the GFETs has been performed at operating temperatures up to 100?°C limited by deterioration of the gate dielectric performance at higher temperatures. Devices displayed stable operation with the gate oxide dielectric strength exceeding 4.5 MV/cm at 100?°C. Significant shifting of the charge neutrality point and an increase of the peak transconductance were observed in the GFETs as the operating temperature was elevated from room temperature to 100?°C.

  8. Assesment of Riverbed Change Due to the Operation of a Series of Gates in a Natural River

    E-Print Network [OSTI]

    Kim, Zooho

    2013-03-13T23:59:59.000Z

    the Mesh .............................................................. 87 Figure 63 Study Area in 2-D Model ......................................................................... 88 viii Figure 64 Comparison of Cross Sections between 1-D... Characteristics from Estuary to Bakje Weir ........................... 123 Figure 88 Temporal Comparison of Hydraulic Characteristics ............................... 125 Figure 89 Mass Change from Sejong Weir to Daechung Dam by Gate Operation . 129...

  9. Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability

    E-Print Network [OSTI]

    Misra, Durgamadhab "Durga"

    Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability N 2007; published online 17 January 2008 This work investigates the role of hydrogen and nitrogen in a Ge. Virtually unchanged interface state density as a function of NBTI indicates no atomic hydrogen release from

  10. Linguistic Alignment in Natural Language Generation

    E-Print Network [OSTI]

    Halberg, Gabrielle Manya

    2013-01-01T23:59:59.000Z

    that are instantiated at generation time. . . . . . . . .that are instantiated at generation time. . Illustration ofin Natural Language Generation by Gabrielle Halberg

  11. A New Gated X-Ray Detector for the Orion Laser Facility

    SciTech Connect (OSTI)

    Clark, David D. [Los Alamos National Laboratory; Aragonez, Robert J. [Los Alamos National Laboratory; Archuleta, Thomas N. [Los Alamos National Laboratory; Fatherley, Valerie E. [Los Alamos National Laboratory; Hsu, Albert H. [Los Alamos National Laboratory; Jorgenson, H. J. [Los Alamos National Laboratory; Mares, Danielle [Los Alamos National Laboratory; Oertel, John A. [Los Alamos National Laboratory; Oades, Kevin [Atomic Weapons Establishment; Kemshall, Paul [Atomic Weapons Establishment; Thomas, Philip [Atomic Weapons Establishment; Young, Trevor [Atomic Weapons Establishment; Pederson, Neal [VI Control Systems

    2012-08-08T23:59:59.000Z

    Gated X-Ray Detectors (GXD) are considered the work-horse target diagnostic of the laser based inertial confinement fusion (ICF) program. Recently, Los Alamos National Laboratory (LANL) has constructed three new GXDs for the Orion laser facility at the Atomic Weapons Establishment (AWE) in the United Kingdom. What sets these three new instruments apart from the what has previously been constructed for the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) is: improvements in detector head microwave transmission lines, solid state embedded hard drive and updated control software, and lighter air box design and other incremental mechanical improvements. In this paper we will present the latest GXD design enhancements and sample calibration data taken on the Trident laser facility at Los Alamos National Laboratory using the newly constructed instruments.

  12. A digital optical phase-locked loop for diode lasers based on field programmable gate array

    SciTech Connect (OSTI)

    Xu Zhouxiang; Zhang Xian; Huang Kaikai; Lu Xuanhui [Physics Department, Zhejiang University, Hangzhou, 310027 (China)

    2012-09-15T23:59:59.000Z

    We have designed and implemented a highly digital optical phase-locked loop (OPLL) for diode lasers in atom interferometry. The three parts of controlling circuit in this OPLL, including phase and frequency detector (PFD), loop filter and proportional integral derivative (PID) controller, are implemented in a single field programmable gate array chip. A structure type compatible with the model MAX9382/MCH12140 is chosen for PFD and pipeline and parallelism technology have been adapted in PID controller. Especially, high speed clock and twisted ring counter have been integrated in the most crucial part, the loop filter. This OPLL has the narrow beat note line width below 1 Hz, residual mean-square phase error of 0.14 rad{sup 2} and transition time of 100 {mu}s under 10 MHz frequency step. A main innovation of this design is the completely digitalization of the whole controlling circuit in OPLL for diode lasers.

  13. Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics

    SciTech Connect (OSTI)

    Sangwan, Vinod K.; Jariwala, Deep; McMorrow, Julian J.; He, Jianting; Lauhon, Lincoln J. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Everaerts, Ken [Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States); Grayson, Matthew [Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 (United States); Marks, Tobin J., E-mail: t-marks@northwestern.edu, E-mail: m-hersam@northwestern.edu; Hersam, Mark C., E-mail: t-marks@northwestern.edu, E-mail: m-hersam@northwestern.edu [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States)

    2014-02-24T23:59:59.000Z

    Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2?V), negligible hysteresis, current saturation with intrinsic gain >1.0 in vacuum (pressure?gate dielectrics. Statistical analysis of the field-effect mobility and residual carrier concentration demonstrate high spatial uniformity of the dielectric interfacial properties and graphene transistor characteristics over full 3 in. wafers. This work thus establishes SANDs as an effective platform for large-area, high-performance graphene electronics.

  14. Nucleotide-induced conformational motions and transmembrane gating dynamics in a bacterial ABC transporter

    E-Print Network [OSTI]

    Flechsig, Holger

    2014-01-01T23:59:59.000Z

    ATP-binding cassette (ABC) transporters are integral membrane proteins that mediate the exchange of diverse substrates across membranes powered by ATP hydrolysis. We report results of coarse-grained dynamical simulations performed for the bacterial heme transporter HmuUV. Based on the nucleotide-free structure, we have constructed a ligand-elastic-network description for this protein and investigated ATP-induced conformational motions in structurally resolved computer experiments. As we found, interactions with nucleotides resulted in generic motions which are functional and robust. Upon binding of ATP-mimicking ligands the structure changed from a conformation in which the nucleotide-binding domains formed an open shape, to a conformation in which they were found in tight contact and the transmembrane domains were rotated. The heme channel was broadened in the ligand-bound complex and the gate to the cytoplasm, which was closed in the nucleotide-free conformation, was rendered open by a mechanism that involv...

  15. Ultrafast control of nuclear spins using only microwave pulses: towards switchable solid-state quantum gates

    E-Print Network [OSTI]

    George Mitrikas; Yiannis Sanakis; Georgios Papavassiliou

    2009-10-13T23:59:59.000Z

    We demonstrate the control of the alpha-proton nuclear spin, I=1/2, coupled to the stable radical CH(COOH)2, S=1/2, in a gamma-irradiated malonic acid single crystal using only microwave pulses. We show that, depending on the state of the electron spin mS=+/-1/2, the nuclear spin can be locked in a desired state or oscillate between mI=+1/2 and mI=-1/2 on the nanosecond time scale. This approach provides a fast and efficient way of controlling nuclear spin qubits and also enables the design of switchable spin-based quantum gates by addressing only the electron spin.

  16. Calibration of a gated flat field spectrometer as a function of x-ray intensity

    SciTech Connect (OSTI)

    Xiong, Gang; Yang, Guohong; Li, Hang; Zhang, Jiyan, E-mail: zhangjiyanzjy@sina.com; Zhao, Yang; Hu, Zhimin; Wei, Minxi; Qing, Bo; Yang, Jiamin; Liu, Shenye; Jiang, Shaoen [Research Center of Laser Fusion, China Academy of Engineering Physics, P. O. Box 919-986, Mianyang 621900 (China)] [Research Center of Laser Fusion, China Academy of Engineering Physics, P. O. Box 919-986, Mianyang 621900 (China)

    2014-04-15T23:59:59.000Z

    We present an experimental determination of the response of a gated flat-field spectrometer at the Shenguang-II laser facility. X-rays were emitted from a target that was heated by laser beams and then were divided into different intensities with a step aluminum filter and collected by a spectrometer. The transmission of the filter was calibrated using the Beijing Synchrotron Radiation Facility. The response characteristics of the spectrometer were determined by comparing the counts recorded by the spectrometer with the relative intensities of the x-rays transmitted through the step aluminum filter. The response characteristics were used to correct the transmission from two shots of an opacity experiment using the same samples. The transmissions from the two shots are consistent with corrections, but discrepant without corrections.

  17. A Strained Organic Field-Effect-Transistor with a Gate-Tunable Superconducting Channel

    E-Print Network [OSTI]

    Hiroshi M. Yamamoto; Masaki Nakano; Masayuki Suda; Yoshihiro Iwasa; Masashi Kawasaki; Reizo Kato

    2013-09-02T23:59:59.000Z

    In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high performance computing and should be valid for electric-field-induced superconducting devices, too. However, so far, the carrier density is the sole parameter for field-induced superconducting interfaces. Here we show an active organic superconducting field-effect-transistor whose lattice is modulated by the strain from the substrate. The soft organic lattice allows tuning of the strain by a choice of the back substrate to make an induced superconducting state accessible at low temperature with a paraelectric solid gate. An active three terminal Josephson junction device thus realized is useful both in advanced computing and in elucidating a direct connection between filling-controlled and bandwidth-controlled superconducting phases in correlated materials.

  18. Highly stable aerosol generator

    DOE Patents [OSTI]

    DeFord, H.S.; Clark, M.L.

    1981-11-03T23:59:59.000Z

    An improved compressed air nebulizer has been developed such that a uniform aerosol particle size and concentration may be produced over long time periods. This result is achieved by applying a vacuum pressure to the makeup assembly and by use of a vent tube between the atmosphere and the makeup solution. By applying appropriate vacuum pressures to the makeup solution container and by proper positioning of the vent tube, a constant level of aspirating solution may be maintained within the aspirating assembly with aspirating solution continuously replaced from the makeup solution supply. This device may also be adapted to have a plurality of aerosol generators and only one central makeup assembly. 2 figs.

  19. Hermetic turbine generator

    DOE Patents [OSTI]

    Meacher, John S. (Ballston Lake, NY); Ruscitto, David E. (Ballston Spa, NY)

    1982-01-01T23:59:59.000Z

    A Rankine cycle turbine drives an electric generator and a feed pump, all on a single shaft, and all enclosed within a hermetically sealed case. The shaft is vertically oriented with the turbine exhaust directed downward and the shaft is supported on hydrodynamic fluid film bearings using the process fluid as lubricant and coolant. The selection of process fluid, type of turbine, operating speed, system power rating, and cycle state points are uniquely coordinated to achieve high turbine efficiency at the temperature levels imposed by the recovery of waste heat from the more prevalent industrial processes.

  20. Computer generated holographic microtags

    DOE Patents [OSTI]

    Sweatt, W.C.

    1998-03-17T23:59:59.000Z

    A microlithographic tag comprising an array of individual computer generated holographic patches having feature sizes between 250 and 75 nanometers is disclosed. The tag is a composite hologram made up of the individual holographic patches and contains identifying information when read out with a laser of the proper wavelength and at the proper angles of probing and reading. The patches are fabricated in a steep angle Littrow readout geometry to maximize returns in the -1 diffracted order. The tags are useful as anti-counterfeiting markers because of the extreme difficulty in reproducing them. 5 figs.

  1. Generation | Department of Energy

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelinesProvedDecember 2005DepartmentDecember U.S.FinancialofFuelDepartment ofGeneralGeneration

  2. Next Generation Materials:

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "of EnergyEnergyENERGY TAXBalanced Scorecard Federal2EnergyDepartment ofNews News RecentNext Generation

  3. Mechanisms for plasma etching of HfO{sub 2} gate stacks with Si selectivity and photoresist trimming

    SciTech Connect (OSTI)

    Shoeb, Juline; Kushner, Mark J. [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

    2009-11-15T23:59:59.000Z

    To minimize leakage currents resulting from the thinning of the insulator in the gate stack of field effect transistors, high-dielectric constant (high-k) metal oxides, and HfO{sub 2} in particular, are being implemented as a replacement for SiO{sub 2}. To speed the rate of processing, it is desirable to etch the gate stack (e.g., metal gate, antireflection layers, and dielectric) in a single process while having selectivity to the underlying Si. Plasma etching using Ar/BCl{sub 3}/Cl{sub 2} mixtures effectively etches HfO{sub 2} while having good selectivity to Si. In this article, results from integrated reactor and feature scale modeling of gate-stack etching in Ar/BCl{sub 3}/Cl{sub 2} plasmas, preceded by photoresist trimming in Ar/O{sub 2} plasmas, are discussed. It was found that BCl{sub n} species react with HfO{sub 2}, which under ion impact, form volatile etch products such as B{sub m}OCl{sub n} and HfCl{sub n}. Selectivity to Si is achieved by creating Si-B bonding as a precursor to the deposition of a BCl{sub n} polymer which slows the etch rate relative to HfO{sub 2}. The low ion energies required to achieve this selectivity then challenge one to obtain highly anisotropic profiles in the metal gate portion of the stack. Validation was performed with data from literature. The effect of bias voltage and key reactant probabilities on etch rate, selectivity, and profile are discussed.

  4. Development of a super high speed motor-generator and controller

    SciTech Connect (OSTI)

    Hong, Do-Kwan, E-mail: dkhong@keri.re.kr; Ahn, Min-Hyuk; Joo, Dae-Suk; Woo, Byung-Chul; Koo, Dae-Hyun [Korea Electrotechnology Research Institute, Changwon 641-120 (Korea, Republic of)

    2014-05-07T23:59:59.000Z

    To develop a super high speed motor-generator, it is essential to deal with magnetic analysis, dynamic analysis, and experimental evaluation of the heart of the MTG (Microturbine Generator) system, the motor-generator. An amorphous core is applied to a stator core for reduction of iron loss at high speed, and the motor-generator is analyzed with considerations focused on magnetic losses and the statistical optimum design. The performance of the amorphous core is validated by the analysis and experiment by back-to-back tests considering the AC load. Rotor dynamics is performed for dynamic stability at high speed using transient analysis orbit diagrams and compared with the experimental results. The simulation results of the generator are compared with the experiment. Also a super high speed controller of the MTG system is developed using a sensorless algorithm, power stack, gate driver, digital signal processing, analog circuit, and radiation heat design. Based on these results, a high speed motor-generator and controller are successfully developed.

  5. Energy Generation by State and Technology (2009) - Energy Generation...

    Open Energy Info (EERE)

    Energy Generation by Fuel ... Download Energy Generation by Fuel Source and State, 2009 URL: http:en.openei.orgdatasetsdataset03f65dc9-ddc9-41ce-806f-edafad486a1fresource...

  6. Direct observation of bias-dependence potential distribution in metal/HfO{sub 2} gate stack structures by hard x-ray photoelectron spectroscopy under device operation

    SciTech Connect (OSTI)

    Yamashita, Y. [National Institute for Materials Science, Advanced Electric Materials Center, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); National Institute for Materials Science, NIMS Beamline Station at SPring-8, 1-1-1 Kôto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Yoshikawa, H.; Kobayashi, K. [National Institute for Materials Science, NIMS Beamline Station at SPring-8, 1-1-1 Kôto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Chikyo, T. [National Institute for Materials Science, Advanced Electric Materials Center, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2014-01-28T23:59:59.000Z

    Although gate stack structures with high-k materials have been extensively investigated, there are some issues to be solved for the formation of high quality gate stack structures. In the present study, we employed hard x-ray photoelectron spectroscopy in operating devices. This method allows us to investigate bias dependent electronic states, while keeping device structures intact. Using this method, we have investigated electronic states and potential distribution in gate metal/HfO{sub 2} gate stack structures under device operation. Analysis of the core levels shifts as a function of the bias voltage indicated that a potential drop occurred at the Pt/HfO{sub 2} interface for a Pt/HfO{sub 2} gate structure, while a potential gradient was not observed at the Ru/HfO{sub 2} interface for a Ru/HfO{sub 2} gate structure. Angle resolved photoelectron spectroscopy revealed that a thicker SiO{sub 2} layer was formed at the Pt/HfO{sub 2} interface, indicating that the origin of potential drop at Pt/HfO{sub 2} interface is formation of the thick SiO{sub 2} layer at the interface. The formation of the thick SiO{sub 2} layer at the metal/high-k interface might concern the Fermi level pinning, which is observed in metal/high-k gate stack structures.

  7. Energy Replacement Generation Tax Exemption

    Broader source: Energy.gov [DOE]

    Iowa imposes a replacement generation tax of 0.06 cents ($0.0006) per kilowatt-hour (kWh) on various forms of electricity generated within the state. This tax is imposed in lieu of a property tax...

  8. Steam generator tube rupture study

    E-Print Network [OSTI]

    Free, Scott Thomas

    1986-01-01T23:59:59.000Z

    This report describes our investigation of steam generator behavior during a postulated tube rupture accident. Our study was performed using the steam generator, thermal-hydraulic analysis code THERMIT-UTSG. The purpose ...

  9. Energy Generation Project Permitting (Vermont)

    Broader source: Energy.gov [DOE]

    The Vermont Energy Generation Siting Policy Commission is mandated to survey best practices for siting approval of electric generation projects (all facilities except for net- and group-net-metered...

  10. Transition-fault test generation

    E-Print Network [OSTI]

    Cobb, Bradley Douglas

    2013-02-22T23:59:59.000Z

    . One way to detect these timing defects is to apply test patterns to the integrated circuit that are generated using the transition-fault model. Unfortunately, industry's current transition-fault test generation schemes produce test sets that are too...

  11. Peak power ratio generator

    DOE Patents [OSTI]

    Moyer, Robert D. (Albuquerque, NM)

    1985-01-01T23:59:59.000Z

    A peak power ratio generator is described for measuring, in combination with a conventional power meter, the peak power level of extremely narrow pulses in the gigahertz radio frequency bands. The present invention in a preferred embodiment utilizes a tunnel diode and a back diode combination in a detector circuit as the only high speed elements. The high speed tunnel diode provides a bistable signal and serves as a memory device of the input pulses for the remaining, slower components. A hybrid digital and analog loop maintains the peak power level of a reference channel at a known amount. Thus, by measuring the average power levels of the reference signal and the source signal, the peak power level of the source signal can be determined.

  12. Downhole hydraulic seismic generator

    DOE Patents [OSTI]

    Gregory, Danny L. (Corrales, NM); Hardee, Harry C. (Albuquerque, NM); Smallwood, David O. (Albuquerque, NM)

    1992-01-01T23:59:59.000Z

    A downhole hydraulic seismic generator system for transmitting energy wave vibrations into earth strata surrounding a borehole. The system contains an elongated, unitary housing operably connected to a well head aboveground by support and electrical cabling, and contains clamping apparatus for selectively clamping the housing to the walls of the borehole. The system further comprises a hydraulic oscillator containing a double-actuating piston whose movement is controlled by an electro-servovalve regulating a high pressure hydraulic fluid flow into and out of upper and lower chambers surrounding the piston. The spent hydraulic fluid from the hydraulic oscillator is stored and pumped back into the system to provide high pressure fluid for conducting another run at the same, or a different location within the borehole.

  13. MHD Generation Code

    E-Print Network [OSTI]

    Frutos-Alfaro, Francisco

    2015-01-01T23:59:59.000Z

    A program to generate codes in Fortran and C of the full Magnetohydrodynamic equations is shown. The program used the free computer algebra system software REDUCE. This software has a package called EXCALC, which is an exterior calculus program. The advantage of this program is that it can be modified to include another complex metric or spacetime. The output of this program is modified by means of a LINUX script which creates a new REDUCE program to manipulate the MHD equations to obtain a code that can be used as a seed for a MHD code for numerical applications. As an example, we present part of output of our programs for Cartesian coordinates and how to do the discretization.

  14. Superconducting thermoelectric generator

    DOE Patents [OSTI]

    Metzger, J.D.; El-Genk, M.S.

    1996-01-01T23:59:59.000Z

    An apparatus and method for producing electricity from heat. The present invention is a thermoelectric generator that uses materials with substantially no electrical resistance, often called superconductors, to efficiently convert heat into electrical energy without resistive losses. Preferably, an array of superconducting elements is encased within a second material with a high thermal conductivity. The second material is preferably a semiconductor. Alternatively, the superconducting material can be doped on a base semiconducting material, or the superconducting material and the semiconducting material can exist as alternating, interleaved layers of waferlike materials. A temperature gradient imposed across the boundary of the two materials establishes an electrical potential related to the magnitude of the temperature gradient. The superconducting material carries the resulting electrical current at zero resistivity, thereby eliminating resistive losses. The elimination of resistive losses significantly increases the conversion efficiency of the thermoelectric device.

  15. Stratified vapor generator

    DOE Patents [OSTI]

    Bharathan, Desikan (Lakewood, CO); Hassani, Vahab (Golden, CO)

    2008-05-20T23:59:59.000Z

    A stratified vapor generator (110) comprises a first heating section (H.sub.1) and a second heating section (H.sub.2). The first and second heating sections (H.sub.1, H.sub.2) are arranged so that the inlet of the second heating section (H.sub.2) is operatively associated with the outlet of the first heating section (H.sub.1). A moisture separator (126) having a vapor outlet (164) and a liquid outlet (144) is operatively associated with the outlet (124) of the second heating section (H.sub.2). A cooling section (C.sub.1) is operatively associated with the liquid outlet (144) of the moisture separator (126) and includes an outlet that is operatively associated with the inlet of the second heating section (H.sub.2).

  16. Tailpulse signal generator

    DOE Patents [OSTI]

    Baker, John (Walnut Creek, CA); Archer, Daniel E. (Knoxville, TN); Luke, Stanley John (Pleasanton, CA); Decman, Daniel J. (Livermore, CA); White, Gregory K. (Livermore, CA)

    2009-06-23T23:59:59.000Z

    A tailpulse signal generating/simulating apparatus, system, and method designed to produce electronic pulses which simulate tailpulses produced by a gamma radiation detector, including the pileup effect caused by the characteristic exponential decay of the detector pulses, and the random Poisson distribution pulse timing for radioactive materials. A digital signal process (DSP) is programmed and configured to produce digital values corresponding to pseudo-randomly selected pulse amplitudes and pseudo-randomly selected Poisson timing intervals of the tailpulses. Pulse amplitude values are exponentially decayed while outputting the digital value to a digital to analog converter (DAC). And pulse amplitudes of new pulses are added to decaying pulses to simulate the pileup effect for enhanced realism in the simulation.

  17. Superconducting thermoelectric generator

    DOE Patents [OSTI]

    Metzger, John D. (Eaton's Neck, NY); El-Genk, Mohamed S. (Albuquerque, NM)

    1998-01-01T23:59:59.000Z

    An apparatus and method for producing electricity from heat. The present invention is a thermoelectric generator that uses materials with substantially no electrical resistance, often called superconductors, to efficiently convert heat into electrical energy without resistive losses. Preferably, an array of superconducting elements is encased within a second material with a high thermal conductivity. The second material is preferably a semiconductor. Alternatively, the superconducting material can be doped on a base semiconducting material, or the superconducting material and the semiconducting material can exist as alternating, interleaved layers of waferlike materials. A temperature gradient imposed across the boundary of the two materials establishes an electrical potential related to the magnitude of the temperature gradient. The superconducting material carries the resulting electrical current at zero resistivity, thereby eliminating resistive losses. The elimination of resistive losses significantly increases the conversion efficiency of the thermoelectric device.

  18. Superconducting thermoelectric generator

    DOE Patents [OSTI]

    Metzger, J.D.; El-Genk, M.S.

    1998-05-05T23:59:59.000Z

    An apparatus and method for producing electricity from heat is disclosed. The present invention is a thermoelectric generator that uses materials with substantially no electrical resistance, often called superconductors, to efficiently convert heat into electrical energy without resistive losses. Preferably, an array of superconducting elements is encased within a second material with a high thermal conductivity. The second material is preferably a semiconductor. Alternatively, the superconducting material can be doped on a base semiconducting material, or the superconducting material and the semiconducting material can exist as alternating, interleaved layers of waferlike materials. A temperature gradient imposed across the boundary of the two materials establishes an electrical potential related to the magnitude of the temperature gradient. The superconducting material carries the resulting electrical current at zero resistivity, thereby eliminating resistive losses. The elimination of resistive losses significantly increases the conversion efficiency of the thermoelectric device. 4 figs.

  19. Self-assembling software generator

    DOE Patents [OSTI]

    Bouchard, Ann M. (Albuquerque, NM); Osbourn, Gordon C. (Albuquerque, NM)

    2011-11-25T23:59:59.000Z

    A technique to generate an executable task includes inspecting a task specification data structure to determine what software entities are to be generated to create the executable task, inspecting the task specification data structure to determine how the software entities will be linked after generating the software entities, inspecting the task specification data structure to determine logic to be executed by the software entities, and generating the software entities to create the executable task.

  20. Generational Policy Laurence J. Kotlikoff

    E-Print Network [OSTI]

    Spence, Harlan Ernest

    Generational Policy by Laurence J. Kotlikoff Boston University The National Bureau of Economic;1 Abstract Generational policy is a fundamental aspect of a nation's fiscal affairs. The policy involves generational policy works, how it's measured, and how much it matters to virtual as well as real economies

  1. Second Harmonic Generation From Surfaces

    E-Print Network [OSTI]

    Botti, Silvana

    Second Harmonic Generation From Surfaces Nicolas Tancogne-Dejean, Valérie Véniard Condensed Matter/DSM European Theoretical Spectroscopy Facility #12;2 Outline Nonlinear optic and second harmonic generation;4 Second harmonic generation First nonlinear term Centrosymmetric material : (2) = 0 (3)First nonlinear

  2. Electricity Generation by Rhodopseudomonas palustris

    E-Print Network [OSTI]

    ,6). Shewanella oneidensis MR-1 and Geobacter sulfurreducens PCA are two DMRB capable of electricity generationElectricity Generation by Rhodopseudomonas palustris DX-1 D E F E N G X I N G , , Y I Z U O manuscript received March 20, 2008. Accepted March 25, 2008. Bacteria able to generate electricity

  3. Generation of strongly chaotic beats

    E-Print Network [OSTI]

    I. Sliwa; P. Szlachetka; K. Grygiel

    2007-04-25T23:59:59.000Z

    The letter proposes a procedure for generation of strongly chaotic beats that have been hardly obtainable hitherto. The beats are generated in a nonlinear optical system governing second-harmonic generation of light. The proposition is based on the concept of an optical coupler but can be easily adopted to other nonlinear systems and Chua's circuits.

  4. ransmission, rather than generation, is

    E-Print Network [OSTI]

    T ransmission, rather than generation, is generally the con- straint preventing cus- tomers from to expand transmission capacity adequately: Over 40 years, the amount of electricity generated in the United customers, with a few ties to neighbors in case a generator went down. That system was never designed for

  5. DISTRIBUTED GENERATION AND COGENERATION POLICY

    E-Print Network [OSTI]

    CALIFORNIA ENERGY COMMISSION DISTRIBUTED GENERATION AND COGENERATION POLICY ROADMAP FOR CALIFORNIA to the development of this report by the Energy Commission's Distributed Generation Policy Advisory Team; Melissa;ABSTRACT This report defines a year 2020 policy vision for distributed generation and cogeneration

  6. GEOTHERMAL POWER GENERATION PLANT

    SciTech Connect (OSTI)

    Boyd, Tonya

    2013-12-01T23:59:59.000Z

    Oregon Institute of Technology (OIT) drilled a deep geothermal well on campus (to 5,300 feet deep) which produced 196oF resource as part of the 2008 OIT Congressionally Directed Project. OIT will construct a geothermal power plant (estimated at 1.75 MWe gross output). The plant would provide 50 to 75 percent of the electricity demand on campus. Technical support for construction and operations will be provided by OIT’s Geo-Heat Center. The power plant will be housed adjacent to the existing heat exchange building on the south east corner of campus near the existing geothermal production wells used for heating campus. Cooling water will be supplied from the nearby cold water wells to a cooling tower or air cooling may be used, depending upon the type of plant selected. Using the flow obtained from the deep well, not only can energy be generated from the power plant, but the “waste” water will also be used to supplement space heating on campus. A pipeline will be construction from the well to the heat exchanger building, and then a discharge line will be construction around the east and north side of campus for anticipated use of the “waste” water by facilities in an adjacent sustainable energy park. An injection well will need to be drilled to handle the flow, as the campus existing injection wells are limited in capacity.

  7. High performance organic field-effect transistors with ultra-thin HfO{sub 2} gate insulator deposited directly onto the organic semiconductor

    SciTech Connect (OSTI)

    Ono, S., E-mail: shimpei@criepi.denken.or.jp [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan); Häusermann, R. [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan) [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan); Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland); Chiba, D. [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan) [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 322-0012 (Japan); Department of Applied Physics, University of Tokyo, Tokyo 113-8656 (Japan); Shimamura, K.; Ono, T. [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)] [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); Batlogg, B. [Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland)] [Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland)

    2014-01-06T23:59:59.000Z

    We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO{sub 2} gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm{sup 2}/V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO{sub 2} layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor.

  8. Comparison Of Intake Gate Closure Methods At Lower Granite, Little Goose, Lower Monumental, And Mcnary Dams Using Risk-Based Analysis

    SciTech Connect (OSTI)

    Gore, Bryan F.; Blackburn, Tyrone R.; Heasler, Patrick G.; Mara, Neil L.; Phan, Hahn K.; Bardy, David M.; Hollenbeck, Robert E.

    2001-01-19T23:59:59.000Z

    The objective of this report is to compare the benefits and costs of modifications proposed for intake gate closure systems at four hydroelectric stations on the Lower Snake and Upper Columbia Rivers in the Walla Walla District that are unable to meet the COE 10-minute closure rule due to the installation of fish screens. The primary benefit of the proposed modifications is to reduce the risk of damage to the station and environs when emergency intake gate closure is required. Consequently, this report presents the results and methodology of an extensive risk analysis performed to assess the reliability of powerhouse systems and the costs and timing of potential damages resulting from events requiring emergency intake gate closure. As part of this analysis, the level of protection provided by the nitrogen emergency closure system was also evaluated. The nitrogen system was the basis for the original recommendation to partially disable the intake gate systems. The risk analysis quantifies this protection level.

  9. Vehicle Technologies Office Merit Review 2014: GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit

    Broader source: Energy.gov [DOE]

    Presentation given by University of Alabama at Birmingham at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE...

  10. Vehicle Technologies Office Merit Review 2014: GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit

    Broader source: Energy.gov [DOE]

    Presentation given by University of Alabama at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center of...

  11. Interfacial Layer Growth Condition Dependent Carrier Transport Mechanisms in HfO2/SiO2 Gate Stacks

    SciTech Connect (OSTI)

    Sahoo, S. K.; Misra, D.

    2012-06-04T23:59:59.000Z

    The temperature and field dependent leakage current in HfO{sub 2}/SiO{sub 2} gate stack for in situ steam grown and chemical interfacial layers (ILs) are studied in the temperature range of 20 C to 105 C. Poole-Frenkel mechanism in high field whereas Ohmic conduction in low field region are dominant for both devices. Leakage current decreases whereas both trap energy level ({phi}{sub t}) and activation energy (E{sub a}) increase for chemically grown IL devices. The trap level energy, ({phi}{sub t}) -0.2 eV, indicates that doubly charged oxygen vacancies (V{sup 2-}) are the active electron traps which contribute to the leakage current in these gate stacks.

  12. Schottky barrier source-gated ZnO thin film transistors by low temperature atomic layer deposition

    SciTech Connect (OSTI)

    Ma, Alex M.; Gupta, Manisha; Shoute, Gem; Tsui, Ying Y.; Barlage, Douglas W., E-mail: barlage@ualberta.ca [Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada); Afshar, Amir; Cadien, Kenneth C. [Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada)] [Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada)

    2013-12-16T23:59:59.000Z

    We have fabricated ZnO source-gated thin film transistors (SGTFTs) with a buried TiW source Schottky barrier and a top gate contact. The ZnO active channel and thin high-? HfO{sub 2} dielectric utilized are both grown by atomic layer deposition at temperatures less than 130?°C, and their material and electronic properties are characterized. These SGTFTs demonstrate enhancement-mode operation with a threshold voltage of 0.91?V, electron mobility of 3.9 cm{sup 2} V{sup ?1} s{sup ?1}, and low subthreshold swing of 192?mV/decade. The devices also exhibit a unique combination of high breakdown voltages (>20?V) with low output conductances.

  13. Enhancing controllability and stability of bottom-gated graphene thin-film transistors by passivation with methylamine

    SciTech Connect (OSTI)

    Drapeko, Maksim, E-mail: maksim.drapeko.10@ucl.ac.uk, E-mail: md584@cam.ac.uk [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, WC1H 0AH London, United Kingdom and Centre for Advanced Photonics and Electronics, Department of Engineering, Cambridge University, 9 J J Thomson Avenue, CB3 0HE Cambridge (United Kingdom)

    2014-06-02T23:59:59.000Z

    This paper is intended to aid to bridge the gap between chemistry and electronic engineering. In this work, the fabrication of chemical vapour deposited graphene field-effect transistors employing silicon-nitride (Si{sub 3}N{sub 4}) gate dielectric is presented, showing originally p-type channel conduction due to ambient impurities yielding uncontrollable behaviour. Vacuum annealing has been performed to balance off hole and electron conduction in the channel, leading to the observation of the Dirac point and therefore improving controllability. Non-covalent functionalisation by methylamine has been performed for passivation and stability reasons yielding electron mobility of 4800?cm{sup 2}/V?s and hole mobility of 3800?cm{sup 2}/V?s as well as stabilised controllable behaviour of a bottom-gated transistor. The introduction of interface charge following the non-covalent functionalisation as well as the charge balance have been discussed and analysed.

  14. Dilation x-ray imager a new/faster gated x-ray imager for the NIF

    SciTech Connect (OSTI)

    Nagel, S. R.; Bell, P. M.; Bradley, D. K.; Ayers, M. J.; Barrios, M. A.; Felker, B.; Smith, R. F.; Collins, G. W.; Jones, O. S.; Piston, K.; Raman, K. S. [Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, California 94550 (United States); Hilsabeck, T. J.; Kilkenny, J. D.; Chung, T.; Sammuli, B. [General Atomics, P.O. Box 85608, San Diego, California 92186-5608 (United States); Hares, J. D.; Dymoke-Bradshaw, A. K. L. [Kentech Instruments Ltd., Wallingford, Oxfordshire OX10 (United Kingdom)

    2012-10-15T23:59:59.000Z

    As the yield on implosion shots increases it is expected that the peak x-ray emission reduces to a duration with a FWHM as short as 20 ps for {approx}7 Multiplication-Sign 10{sup 18} neutron yield. However, the temporal resolution of currently used gated x-ray imagers on the NIF is 40-100 ps. We discuss the benefits of the higher temporal resolution for the NIF and present performance measurements for dilation x-ray imager, which utilizes pulse-dilation technology [T. J. Hilsabeck et al., Rev. Sci. Instrum. 81, 10E317 (2010)] to achieve x-ray imaging with temporal gate times below 10 ps. The measurements were conducted using the COMET laser, which is part of the Jupiter Laser Facility at the Lawrence Livermore National Laboratory.

  15. Daily targeting of liver tumors: Screening patients with a mock treatment and using a combination of internal and external fiducials for image-guided respiratory-gated radiotherapy

    SciTech Connect (OSTI)

    Krishnan, Sunil; Briere, Tina Marie; Dong Lei; Murthy, Ravi; Ng, Chaan; Balter, Peter; Mohan, Radhe; Gillin, Michael T.; Beddar, A. Sam [Department of Radiation Oncology, MD Anderson Cancer Center, Houston, Texas 77030 (United States); Department of Radiation Physics, MD Anderson Cancer Center, Houston, Texas 77030 (United States); Department of Diagnostic Radiology, MD Anderson Cancer Center, Houston, Texas 77030 (United States); Department of Radiation Physics, MD Anderson Cancer Center, Houston, Texas 77030 (United States)

    2007-12-15T23:59:59.000Z

    The feasibility and accuracy of using a mock treatment to screen suitable patients for respiratory-gated image-guided radiotherapy was investigated. Radio-opaque fiducials implanted adjacent to the liver tumor were used for online positioning to minimize the systematic error in patient positioning. The consistency in the degree of correlation between the external and internal fiducials was analyzed during a mock treatment. This technique could screen patients for gated therapy, reduce setup inaccuracy, and possibly individualize treatment margins.

  16. Nondestructive characterization of a TiN metal gate: Chemical and structural properties by means of standing-wave hard x-ray

    E-Print Network [OSTI]

    Fadley, Charles

    Nondestructive characterization of a TiN metal gate: Chemical and structural properties by means (HXPS, HAXPES) is applied to a thick (100 A° ) film of a metal gate TiN grown on top of a Si/MoSi2 of TiN, as well as the buried interface between TiN and the native oxide on top of the mirror

  17. Pulsed-gate measurements of the singlet-triplet relaxation time in a two-electron double quantum dot

    E-Print Network [OSTI]

    Petta, Jason

    -gate technique with charge sensing is used to measure the singlet-triplet relaxation time for nearly degenerate spin states in a two-electron double quantum dot. Transitions from the 1,1 charge occupancy state. At dilution refrigerator temperatures, this implies that EZeeman kBT 10 eV, or B 0.5 T. For B 0.5 T, T1 shows

  18. NEXT GENERATION TURBINE PROGRAM

    SciTech Connect (OSTI)

    William H. Day

    2002-05-03T23:59:59.000Z

    The Next Generation Turbine (NGT) Program's technological development focused on a study of the feasibility of turbine systems greater than 30 MW that offer improvement over the 1999 state-of-the-art systems. This program targeted goals of 50 percent turndown ratios, 15 percent reduction in generation cost/kW hour, improved service life, reduced emissions, 400 starts/year with 10 minutes to full load, and multiple fuel usage. Improvement in reliability, availability, and maintainability (RAM), while reducing operations, maintenance, and capital costs by 15 percent, was pursued. This program builds on the extensive low emissions stationary gas turbine work being carried out by Pratt & Whitney (P&W) for P&W Power Systems (PWPS), which is a company under the auspices of the United Technologies Corporation (UTC). This study was part of the overall Department of Energy (DOE) NGT Program that extends out to the year 2008. A follow-on plan for further full-scale component hardware testing is conceptualized for years 2002 through 2008 to insure a smooth and efficient transition to the marketplace for advanced turbine design and cycle technology. This program teamed the National Energy Technology Laboratory (NETL), P&W, United Technologies Research Center (UTRC), kraftWork Systems Inc., a subcontractor on-site at UTRC, and Multiphase Power and Processing Technologies (MPPT), an off-site subcontractor. Under the auspices of the NGT Program, a series of analyses were performed to identify the NGT engine system's ability to serve multiple uses. The majority were in conjunction with a coal-fired plant, or used coal as the system fuel. Identified also was the ability of the NGT system to serve as the basis of an advanced performance cycle: the humid air turbine (HAT) cycle. The HAT cycle is also used with coal gasification in an integrated cycle HAT (IGHAT). The NGT systems identified were: (1) Feedwater heating retrofit to an existing coal-fired steam plant, which could supply both heat and peaking power (Block 2 engine); (2) Repowering of an older coal-fired plant (Block 2 engine); (3) Gas-fired HAT cycle (Block 1 and 2 engines); (4) Integrated gasification HAT (Block 1 and 2 engines). Also under Phase I of the NGT Program, a conceptual design of the combustion system has been completed. An integrated approach to cycle optimization for improved combustor turndown capability has been employed. The configuration selected has the potential for achieving single digit NO{sub x}/CO emissions between 40 percent and 100 percent load conditions. A technology maturation plan for the combustion system has been proposed. Also, as a result of Phase I, ceramic vane technology will be incorporated into NGT designs and will require less cooling flow than conventional metallic vanes, thereby improving engine efficiency. A common 50 Hz and 60 Hz power turbine was selected due to the cost savings from eliminating a gearbox. A list of ceramic vane technologies has been identified for which the funding comes from DOE, NASA, the U.S. Air Force, and P&W.

  19. Gate-Dependent Carrier Diffusion Length in Lead Selenide Quantum Dot Field-Effect Transistors

    E-Print Network [OSTI]

    Yu, Dong

    -generation solar panels. Strongly confined QDs such as lead selenide (PbSe) also have the potential to benefit from- generation photovoltaic devices and sensitive photodetec- tors.1-3 The potential for low fabrication cost improvements are still necessary for QD solar cells to compete with commercial technologies. In particular

  20. Development of a Microchannel Plate-Based Gated X-ray Imager for Imaging and Spectroscopy Experiments on Z

    SciTech Connect (OSTI)

    Wu, M., Kruschwitz, C. A., Tibbitts, A., Rochau, G.

    2011-06-24T23:59:59.000Z

    This poster describes a microchannelplate (MCP)–based, gated x-ray imager developed by National Security Technologies, LLC (NSTec), and Sandia National Laboratories(SNL) over the past several years. The camera consists of a 40 mm × 40 mm MCP, coated with eight 4 mm wide microstrips. The camera is gated by sending subnanosecond high-voltage pulses across the striplines. We have performed an extensive characterization of the camera, the results of which we present here. The camera has an optical gate profile width (time resolution) as narrow as 150 ps and detector uniformity of better than 30% along the length of a strip, far superior than what was achieved in previous designs. The spatial resolution is on the order of 40 microns for imaging applications and a dynamic range of between ~100 and ~1000. We also present results from a Monte Carlo simulation code developed by NSTec over the last several years. Agreement between the simulation results and the experimental measurements is very good.

  1. A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

    SciTech Connect (OSTI)

    Lamichhane, Ranjan [University of Arkansas; Ericson, Milton Nance [ORNL; Frank, Steven Shane [ORNL; BRITTONJr., CHARLES L. [Oak Ridge National Laboratory (ORNL); Marlino, Laura D [ORNL; Mantooth, Alan [University of Arkansas; Francis, Matt [APEI, Inc.; Shepherd, Dr. Paul [University of Arkansas; Glover, Dr. Michael [University of Arkansas; Podar, Mircea [ORNL; Perez, M [University of Arkansas; Mcnutt, Tyler [APEI, Inc.; Whitaker, Mr. Bret [APEI, Inc.; Cole, Mr. Zach [APEI, Inc.

    2014-01-01T23:59:59.000Z

    Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz to 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.

  2. Cryogenic on-chip multiplexer for the study of quantum transport in 256 split-gate devices

    SciTech Connect (OSTI)

    Al-Taie, H., E-mail: ha322@cam.ac.uk; Kelly, M. J. [Centre for Advanced Photonics and Electronics, Electrical Engineering Division, Department of Engineering, 9 J. J. Thomson Avenue, University of Cambridge, Cambridge CB3 0FA (United Kingdom) [Centre for Advanced Photonics and Electronics, Electrical Engineering Division, Department of Engineering, 9 J. J. Thomson Avenue, University of Cambridge, Cambridge CB3 0FA (United Kingdom); Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Smith, L. W.; Xu, B.; Griffiths, J. P.; Beere, H. E.; Jones, G. A. C.; Ritchie, D. A.; Smith, C. G. [Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom)] [Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); See, P. [National Physical Laboratory, Hampton Road, Teddington, Middlesex TW11 0LW (United Kingdom)] [National Physical Laboratory, Hampton Road, Teddington, Middlesex TW11 0LW (United Kingdom)

    2013-06-17T23:59:59.000Z

    We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plateaux at intervals of 2e{sup 2}/h. A fabrication-limited yield of 94% is achieved for the array, and a “quantum yield” is also defined, to account for disorder affecting the quantum behaviour of the devices. The quantum yield rose from 55% to 86% after illuminating the sample, explained by the corresponding increase in carrier density and mobility of the two-dimensional electron gas. The multiplexer is a scalable architecture, and can be extended to other forms of mesoscopic devices. It overcomes previous limits on the number of devices that can be fabricated on a single chip due to the number of electrical contacts available, without the need to alter existing experimental set ups.

  3. Droplet minimizers for the Gates-Lebowitz-Penrose free energy functional

    E-Print Network [OSTI]

    E. A. Carlen; M. C. Carvalho; R. Esposito; J. L. Lebowitz; R. Marra

    2009-05-21T23:59:59.000Z

    We study the structure of the constrained minimizers of the Gates-Lebowitz-Penrose free-energy functional ${\\mathcal F}_{\\rm GLP}(m)$, non-local functional of a density field $m(x)$, $x\\in {\\mathcal T}_L$, a $d$-dimensional torus of side length $L$. At low temperatures, ${\\mathcal F}_{\\rm GLP}$ is not convex, and has two distinct global minimizers, corresponding to two equilibrium states. Here we constrain the average density $L^{-d}\\int_{{\\cal T}_L}m(x)\\dd x$ to be a fixed value $n$ between the densities in the two equilibrium states, but close to the low density equilibrium value. In this case, a "droplet" of the high density phase may or may not form in a background of the low density phase, depending on the values $n$ and $L$. We determine the critical density for droplet formation, and the nature of the droplet, as a function of $n$ and $L$. The relation between the free energy and the large deviations functional for a particle model with long-range Kac potentials, proven in some cases, and expected to be true in general, then provides information on the structure of typical microscopic configurations of the Gibbs measure when the range of the Kac potential is large enough.

  4. HfO{sub x}N{sub y} gate dielectric on p-GaAs

    SciTech Connect (OSTI)

    Dalapati, G. K.; Sridhara, A.; Wong, A. S. W.; Chia, C. K.; Chi, D. Z. [Institute of Materials Research and Engineering, A-STAR - Agency for Science, Technology and Research, 3 Research Link, Singapore 117602 (Singapore)

    2009-02-16T23:59:59.000Z

    Plasma nitridation method is used for nitrogen incorporation in HfO{sub 2} based gate dielectrics for future GaAs-based devices. The nitrided HfO{sub 2} (HfO{sub x}N{sub y}) films on p-GaAs improve metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, hysteresis, and leakage current. An equivalent oxide thickness of 3.6 nm and a leakage current density of 10{sup -6} A cm{sup -2} have been achieved at V{sub FB}-1 V for nitrided HfO{sub 2} films. A nitride interfacial layer (GaAsO:N) was observed at HfO{sub 2}-GaAs interface, which can reduce the outdiffusion of elemental Ga and As during post-thermal annealing process. Such suppression of outdiffusion led to a substantial enhancement in the overall dielectric properties of the HfO{sub 2} film.

  5. SNM neutron detection using a time-gated synthetic aperture hybrid approach

    SciTech Connect (OSTI)

    Molinar, M.; Yi, C.; Edgar, C. A.; Manalo, K.; Chin, M.; Sjoden, G. [Nuclear and Radiological Engineering Program, George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 770 State Street, Atlanta GA 30332-0745 (United States)

    2013-07-01T23:59:59.000Z

    This work focuses on using forward and adjoint transport in a hybrid application of 3-D deterministic (PENTRAN) and Monte Carlo (MCNP5) codes to model a series of neutron detector blocks. These blocks, or 'channels, ' contain a unique set of moderators with 4 atm He-3 detectors tuned to detect and profile a gross energy spectrum of a passing neutron (SNM) source. Ganging the units together as a large area system enables one to apply time gating the source-detector response to maximize signal to noise responses from a passing source with minimal background; multiple units may be positioned as a collective synthetic aperture detector array to be used as a way of performing real time neutron spectroscopy for detecting special nuclear materials in moving vehicles. The initial design, detector response coupling, confirmation of initial design functionality using adjoint transport calculations, and realistic simulation using PENTRAN and MCNP5 are presented. Future work will include optimization and application to realistic scenarios and additional sources. (authors)

  6. Evaluation of soft-core processors on a Xilinx Virtex-5 field programmable gate array.

    SciTech Connect (OSTI)

    Learn, Mark Walter

    2011-04-01T23:59:59.000Z

    Node-based architecture (NBA) designs for future satellite projects hold the promise of decreasing system development time and costs, size, weight, and power and positioning the laboratory to address other emerging mission opportunities quickly. Reconfigurable field programmable gate array (FPGA)-based modules will comprise the core of several of the NBA nodes. Microprocessing capabilities will be necessary with varying degrees of mission-specific performance requirements on these nodes. To enable the flexibility of these reconfigurable nodes, it is advantageous to incorporate the microprocessor into the FPGA itself, either as a hard-core processor built into the FPGA or as a soft-core processor built out of FPGA elements. This document describes the evaluation of three reconfigurable FPGA-based soft-core processors for use in future NBA systems: the MicroBlaze (uB), the open-source Leon3, and the licensed Leon3. Two standard performance benchmark applications were developed for each processor. The first, Dhrystone, is a fixed-point operation metric. The second, Whetstone, is a floating-point operation metric. Several trials were run at varying code locations, loop counts, processor speeds, and cache configurations. FPGA resource utilization was recorded for each configuration.

  7. Model for cradle-to-gate life cycle assessment of clinker production

    SciTech Connect (OSTI)

    Michael Elias Boesch; Annette Koehler; Stefanie Hellweg [ETH Zurich, Zurich (Switzerland). Institute of Environmental Engineering

    2009-10-01T23:59:59.000Z

    A model for input- and technology-dependent cradle-to-gate life cycle assessments (LCA) was constructed to quantify emissions and resource consumption of various clinker production options. The model was compiled using data of more than 100 clinker production lines and complemented with literature data and best judgment from experts. It can be applied by the cement industry for the selection of alternative fuels and raw materials (AFR) and by authorities for decision-support regarding the permission of waste co-processing in cement kilns. In the field of sustainable construction, the model can be used to compare clinker production options. Two case studies are presented. First, co-processing of four different types of waste is analyzed at a modern precalciner kiln system. Second, clinker production is compared between five kiln systems. Results show that the use of waste (tires, prepared industrial waste, dried sewage sludge, blast furnace slag) led to reduced greenhouse gas emissions, decreased resource consumption, and mostly to reduced aggregated environmental impacts. Regarding the different kiln systems, the environmental impact generally increased with decreasing energy efficiency. 35 refs., 2 figs., 2 tabs.

  8. Response of left ventricular ejection fraction to recovery from general anesthesia: measurement by gated radionuclide angiography

    SciTech Connect (OSTI)

    Coriat, P.; Mundler, O.; Bousseau, D.; Fauchet, M.; Rous, A.C.; Echter, E.; Viars, P.

    1986-06-01T23:59:59.000Z

    To test the hypothesis that, after anesthesia for noncardiac surgical procedures, the increased cardiac work during recovery induces wall motion and ejection fraction (EF) abnormalities in patients with mild angina pectoris, gated radionuclide angiography was performed in patients undergoing simple cholecystectomy under narcotic-relaxant general anesthesia. The ejection fraction was determined during anesthesia at the end of surgery, and then determined 3 min and 3 hr after extubation. A new angiography was performed 24 hr later, and a myocardial scintigraphy (Thallium 201) was performed during infusion of the coronary vasodilator, dipyridamole. In the first part of the investigation, eight patients without coronary artery disease (CAD) (group 1) and 20 patients with mild angina (group 2) were studied. In the second part of the study, seven patients (group 3) with mild angina pectoris received an intravenous infusion of 0.4 microgram X kg-1 X min-1 of nitroglycerin started before surgery and gradually decreased 4 hr after extubation. In group 1, EF remained unchanged at recovery. In contrast in group 2, EF responded abnormally to recovery: EF decreased from 55% during anesthesia to 45% 3 min after extubation (P less than 0.001). Patients in group 3, who received intravenous nitroglycerin, showed no change of EF at recovery. This study demonstrates that recovery from general anesthesia causes abnormalities in left ventricular function in patients suffering from CAD. These abnormalities are prevented by prophylactic intravenous nitroglycerin.

  9. Natural fourth generation of leptons

    E-Print Network [OSTI]

    Oleg Antipin; Matti Heikinheimo; Kimmo Tuominen

    2009-09-14T23:59:59.000Z

    We consider implications of a fourth generation of leptons, allowing for the most general mass patterns for the fourth generation neutrino. We determine the constraints due to the precision electroweak measurements and outline the signatures to search for at the LHC experiments. As a concrete framework to apply these results we consider the minimal walking technicolor (MWTC) model where the matter content, regarding the electroweak quantum numbers, corresponds to a fourth generation.

  10. Submersible Generator for Marine Hydrokinetics

    SciTech Connect (OSTI)

    Robert S. Cinq-Mars; Timothy Burke; Dr. James Irish; Brian Gustafson; Dr. James Kirtley; Dr. Aiman Alawa

    2011-09-01T23:59:59.000Z

    A submersible generator was designed as a distinct and critical subassembly of marine hydrokinetics systems, specifically tidal and stream energy conversion. The generator is designed to work with both vertical and horizontal axis turbines. The final product is a high-pole-count, radial-flux, permanent magnet, rim mounted generator, initially rated at twenty kilowatts in a two-meter-per-second flow, and designed to leverage established and simple manufacturing processes. The generator was designed to work with a 3 meter by 7 meter Gorlov Helical Turbine or a marine hydrokinetic version of the FloDesign wind turbine. The team consisted of experienced motor/generator design engineers with cooperation from major US component suppliers (magnetics, coil winding and electrical steel laminations). Support for this effort was provided by Lucid Energy Technologies and FloDesign, Inc. The following tasks were completed: � Identified the conditions and requirements for MHK generators. � Defined a methodology for sizing and rating MHK systems. � Selected an MHK generator topology and form factor. � Completed electromechanical design of submersible generator capable of coupling to multiple turbine styles. � Investigated MHK generator manufacturing requirements. � Reviewed cost implications and financial viability. � Completed final reporting and deliverables

  11. Next-Generation Wind Technology

    Broader source: Energy.gov [DOE]

    The Wind Program works with industry partners to increase the performance and reliability of next-generation wind technologies while lowering the cost of wind energy.

  12. Registration of Electric Generators (Connecticut)

    Broader source: Energy.gov [DOE]

    All electric generating facilities operating in the state, with the exception of hydroelectric and nuclear facilities, must obtain a certificate of registration from the Department of Public...

  13. Solid oxide fuel cell generator

    DOE Patents [OSTI]

    Draper, R.; George, R.A.; Shockling, L.A.

    1993-04-06T23:59:59.000Z

    A solid oxide fuel cell generator has a pair of spaced apart tubesheets in a housing. At least two intermediate barrier walls are between the tubesheets and define a generator chamber between two intermediate buffer chambers. An array of fuel cells have tubes with open ends engaging the tubesheets. Tubular, axially elongated electrochemical cells are supported on the tubes in the generator chamber. Fuel gas and oxidant gas are preheated in the intermediate chambers by the gases flowing on the other side of the tubes. Gas leakage around the tubes through the tubesheets is permitted. The buffer chambers reentrain the leaked fuel gas for reintroduction to the generator chamber.

  14. Renewable Electricity Generation (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2012-09-01T23:59:59.000Z

    This document highlights DOE's Office of Energy Efficiency and Renewable Energy's advancements in renewable electricity generation technologies including solar, water, wind, and geothermal.

  15. Interconnection Agreements for Onsite Generation

    Broader source: Energy.gov [DOE]

    Presentation covers Interconnection Agreements for Onsite Generation and is given at the Spring 2011 Federal Utility Partnership Working Group (FUPWG) meeting.

  16. Interconnection Standards for Small Generators

    Broader source: Energy.gov [DOE]

    The Federal Energy Regulatory Commission (FERC) adopted "small generator" interconnection standards for distributed energy resources up to 20 megawatts (MW) in capacity in May 2005.* The FERC's...

  17. Next Generation Nuclear Plant Phenomena

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and passive heat dissipation to withstand design basis events with minimal fuel damage and source term generation. As such, the NGNP places a burden on the designer to...

  18. Selected Topics in Column Generation

    E-Print Network [OSTI]

    2002-12-02T23:59:59.000Z

    Dec 2, 2002 ... Page 1. Selected Topics in Column Generation. Marco E. Lübbecke ... is an ever recurring concept in our “selected topics.” OR/MS Subject ...

  19. Modulation compression for short wavelength harmonic generation

    E-Print Network [OSTI]

    Qiang, J.

    2010-01-01T23:59:59.000Z

    Wavelength Harmonic Generation Ji Qiang Lawrence Berkeleyform a basis for fourth generation light source. Currently,e?ciency was proposed for generation of short wavelength

  20. Distributed Generation with Heat Recovery and Storage

    E-Print Network [OSTI]

    Siddiqui, Afzal S.; Marnay, Chris; Firestone, Ryan M.; Zhou, Nan

    2008-01-01T23:59:59.000Z

    selection of on-site power generation with combined heat andTotal Electricity Generation Figure 13. Small MercantileWeekday Total Electricity Generation (No Storage Adoption