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Sample records for bulk heterojunction solar

  1. Solar Cells: Spin-Cast Bulk Heterojunction Solar Cells: A Dynamical...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Cells: Spin-Cast Bulk Heterojunction Solar Cells: A Dynamical Investigation Solar Cells: Spin-Cast Bulk Heterojunction Solar Cells: A Dynamical Investigation Print Wednesday,...

  2. The influence of molecular orientation on organic bulk heterojunction solar

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    cells The influence of molecular orientation on organic bulk heterojunction solar cells The influence of molecular orientation on organic bulk heterojunction solar cells Print Monday, 28 April 2014 09:03 Work done on ALS Beamlines 11.0.1.2, 7.3.3, and 5.3.2.2. reveals that preferential orientation of polymer chains with respect to the fullerene domain leads to a high photovoltaic performance. Featured on the cover of Nature Photonics 8. Article link

  3. Solar Cells: Spin-Cast Bulk Heterojunction Solar Cells: A Dynamical

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigation Solar Cells: Spin-Cast Bulk Heterojunction Solar Cells: A Dynamical Investigation Solar Cells: Spin-Cast Bulk Heterojunction Solar Cells: A Dynamical Investigation Print Wednesday, 03 April 2013 13:32 Spin-coating is extensively used in the lab-based manufacturing of organic solar cells, including most of the record-setting cells. Aram Amassian and co-workers report in this study the first direct observation of photoactive layer formation as it occurs during spin-coating. The

  4. "Plastic" Solar Cells: Self-Assembly of Bulk HeterojunctionNano...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Self-Assembly of Bulk Heterojunction Nano-Materials by Spontaneous Phase Separation ... self-assembly of bulk heterojunction (BHJ) nano-materials by spontaneous phase separation. ...

  5. "Plastic" Solar Cells: Self-Assembly of Bulk Heterojunction

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nano-Materials by Spontaneous Phase Separation | MIT-Harvard Center for Excitonics "Plastic" Solar Cells: Self-Assembly of Bulk Heterojunction Nano-Materials by Spontaneous Phase Separation October 20, 2009 at 3pm/36-428 Alan Heeger Department of Chemistry, University of California, Santa Barbara heeger abstract: Solar cells - Power from the Sun - can provide and must provide - a significant contribution to our future energy needs. The challenge is clear; we must create the

  6. Molecular helices as electron acceptors in high-performance bulk heterojunction solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yu M. Zhong; Nam, Chang -Yong; Trinh, M. Tuan; Chen, Rongsheng; Purdum, Geoffrey E.; Khlyabich, Petr P.; Sezen, Melda; Oh, Seokjoon; Zhu, Haiming; Fowler, Brandon; et al

    2015-09-18

    Despite numerous organic semiconducting materials synthesized for organic photovoltaics in the past decade, fullerenes are widely used as electron acceptors in highly efficient bulk-heterojunction solar cells. None of the non-fullerene bulk heterojunction solar cells have achieved efficiencies as high as fullerene-based solar cells. Design principles for fullerene-free acceptors remain unclear in the field. Here we report examples of helical molecular semiconductors as electron acceptors that are on par with fullerene derivatives in efficient solar cells. We achieved an 8.3% power conversion efficiency in a solar cell, which is a record high for non-fullerene bulk heterojunctions. Femtosecond transient absorption spectroscopy revealedmore » both electron and hole transfer processes at the donor–acceptor interfaces. Atomic force microscopy reveals a mesh-like network of acceptors with pores that are tens of nanometres in diameter for efficient exciton separation and charge transport. As a result, this study describes a new motif for designing highly efficient acceptors for organic solar cells.« less

  7. Molecular helices as electron acceptors in high-performance bulk heterojunction solar cells

    SciTech Connect (OSTI)

    Yu M. Zhong; Nam, Chang -Yong; Trinh, M. Tuan; Chen, Rongsheng; Purdum, Geoffrey E.; Khlyabich, Petr P.; Sezen, Melda; Oh, Seokjoon; Zhu, Haiming; Fowler, Brandon; Zhang, Boyuan; Wang, Wei; Sfeir, Matthew Y.; Black, Charles T.; Steigerwald, Michael L.; Loo, Yueh -Lin; Ng, Fay; Zhu, X. -Y.; Nuckolls, Colin

    2015-09-18

    Despite numerous organic semiconducting materials synthesized for organic photovoltaics in the past decade, fullerenes are widely used as electron acceptors in highly efficient bulk-heterojunction solar cells. None of the non-fullerene bulk heterojunction solar cells have achieved efficiencies as high as fullerene-based solar cells. Design principles for fullerene-free acceptors remain unclear in the field. Here we report examples of helical molecular semiconductors as electron acceptors that are on par with fullerene derivatives in efficient solar cells. We achieved an 8.3% power conversion efficiency in a solar cell, which is a record high for non-fullerene bulk heterojunctions. Femtosecond transient absorption spectroscopy revealed both electron and hole transfer processes at the donor–acceptor interfaces. Atomic force microscopy reveals a mesh-like network of acceptors with pores that are tens of nanometres in diameter for efficient exciton separation and charge transport. As a result, this study describes a new motif for designing highly efficient acceptors for organic solar cells.

  8. High-Performance All Air-Processed Polymer-Fullerene Bulk Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Black, C.T.; Nam, C.-Y.; Su, D.

    2009-10-23

    High photovoltaic device performance is demonstrated in ambient-air-processed bulk heterojunction solar cells having an active blend layer of organic poly(3-hexylthiophene) (P3HT): [6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM), with power conversion efficiencies as high as 4.1%, which is comparable to state-of-the-art bulk heterojunction devices fabricated in air-free environments. High-resolution transmission electron microscopy is combined with detailed analysis of electronic carrier transport in order to quantitatively understand the effects of oxygen exposure and different thermal treatments on electronic conduction through the highly nanostructured active blend network. Improvement in photovoltaic device performance by suitable post-fabrication thermal processing results from the reduced oxygen charge trap density in the active blend layer and is consistent with a corresponding slight increase in thickness of an {approx}4 nm aluminum oxide hole-blocking layer present at the electron-collecting contact interface.

  9. Effects of Magnetic Nanoparticles and External Magnetostatic Field on the Bulk Heterojunction Polymer Solar Cells

    SciTech Connect (OSTI)

    Wang, Kai; Yi, Chao; Liu, Chang; Hu, Xiaowen; Chuang, Steven; Gong, Xiong

    2015-03-18

    The price of energy to separate tightly bound electron-hole pair (or charge-transfer state) and extract freely movable charges from low-mobility materials represents fundamental losses for many low-cost photovoltaic devices. In bulk heterojunction (BHJ) polymer solar cells (PSCs), approximately 50% of the total efficiency lost among all energy loss pathways is due to the photogenerated charge carrier recombination within PSCs and low charge carrier mobility of disordered organic materials. To address these issues, we introduce magnetic nanoparticles (MNPs) and orientate these MNPS within BHJ composite by an external magnetostatic field. Over 50% enhanced efficiency was observed from BHJ PSCs incorporated with MNPs and an external magnetostatic field alignment when compared to the control BHJ PSCs. The optimization of BHJ thin film morphology, suppression of charge carrier recombination, and enhancement in charge carrier collection result in a greatly increased short-circuit current density and fill factor, as a result, enhanced power conversion efficiency.

  10. Effects of Magnetic Nanoparticles and External Magnetostatic Field on the Bulk Heterojunction Polymer Solar Cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Kai; Yi, Chao; Liu, Chang; Hu, Xiaowen; Chuang, Steven; Gong, Xiong

    2015-03-18

    The price of energy to separate tightly bound electron-hole pair (or charge-transfer state) and extract freely movable charges from low-mobility materials represents fundamental losses for many low-cost photovoltaic devices. In bulk heterojunction (BHJ) polymer solar cells (PSCs), approximately 50% of the total efficiency lost among all energy loss pathways is due to the photogenerated charge carrier recombination within PSCs and low charge carrier mobility of disordered organic materials. To address these issues, we introduce magnetic nanoparticles (MNPs) and orientate these MNPS within BHJ composite by an external magnetostatic field. Over 50% enhanced efficiency was observed from BHJ PSCs incorporated withmore » MNPs and an external magnetostatic field alignment when compared to the control BHJ PSCs. The optimization of BHJ thin film morphology, suppression of charge carrier recombination, and enhancement in charge carrier collection result in a greatly increased short-circuit current density and fill factor, as a result, enhanced power conversion efficiency.« less

  11. Polydimethylsiloxane as a Macromolecular Additive for Enhanced Performance of Molecular Bulk Heterojunction Organic Solar Cells

    SciTech Connect (OSTI)

    Graham, Kenneth R.; Mei, Jianguo; Stalder, Romain; Shim, Jae Won; Cheun, Hyeunseok; Steffy, Fred; So, Franky; Kippelen, Bernard; Reynolds, John R.

    2011-03-15

    The effect of the macromolecular additive, polydimethylsiloxane (PDMS), on the performance of solution processed molecular bulk heterojunction solar cells is investigated, and the addition of PDMS is shown to improve device power conversion efficiency by ~70% and significantly reduce cell-to-cell variation, from a power conversion efficiency of 1.25 0.37% with no PDMS to 2.16 0.09% upon the addition of 0.1 mg/mL PDMS to the casting solution. The cells are based on a thiophene and isoindigo containing oligomer as the electron donor and [6,6]-phenyl-C61 butyric acid methyl ester (PC61BM) as the electron acceptor. PDMS is shown to have a strong influence on film morphology, with a significant decrease in film roughness and feature size observed. The morphology change leads to improved performance parameters, most notably an increase in the short circuit current density from 4.3 to 6.8 mA/cm2 upon addition of 0.1 mg/mL PDMS. The use of PDMS is of particular interest, as this additive appears frequently as a lubricant in plastic syringes commonly used in device fabrication; therefore, PDMS may unintentionally be incorporated into device active layers.

  12. Efficient solution-processed small molecule: Cadmium selenide quantum dot bulk heterojunction solar cells

    SciTech Connect (OSTI)

    Gupta, Vinay; Department of Physics, University of California, Santa Barbara, California 93106 ; Upreti, Tanvi; Chand, Suresh

    2013-12-16

    We report bulk heterojunction solar cells based on blends of solution-processed small molecule [7,7?-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b?]dithiophene-2,6-diyl) bis(6-fluoro-4-(5?-hexyl-[2,2?-bithiophen]-5yl)benzo[c] [1,2,5] thiadiazole)] p-DTS(FBTTh{sub 2}){sub 2}: Cadmium Selenide (CdSe) (70:30, 60:40, 50:50, and 40:60) in the device configuration: Indium Tin Oxide /poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/p-DTS(FBTTh{sub 2}){sub 2}: CdSe/Ca/Al. The optimized ratio of p-DTS(FBTTh{sub 2}){sub 2}:CdSe::60:40 leads to a short circuit current density (J{sub sc})?=?5.45?mA/cm{sup 2}, open circuit voltage (V{sub oc})?=?0.727?V, and fill factor (FF)?=?51%, and a power conversion efficiency?=?2.02% at 100 mW/cm{sup 2} under AM1.5G illumination. The J{sub sc} and FF are sensitive to the ratio of p-DTS(FBTTh{sub 2}){sub 2}:CdSe, which is a crucial factor for the device performance.

  13. Thermal annealing study on P3HT: PCBM based bulk heterojunction organic solar cells using impedance spectroscopy

    SciTech Connect (OSTI)

    Gollu, Sankara Rao; Sharma, Ramakant G, Srinivas Gupta, Dipti

    2014-10-15

    Recently, Thermal annealing is an important process for bulk heterojunction organic solar cells (BHJ OSCs) to improve the device efficiency and performance of the organic solar cells. Here in, we have examined the changes in the efficiency and morphology of P3HT: PCBM film according to the thermal annealing temperature to find the changes during the annealing process by measuring the optical absorption, atomic force microscope and X-ray diffraction. We also investigated the effect of different annealing process conditions (without, pre- and post-annealing) on the device performance of the inverted bulk heterojunction organic solar cells consist the structure of ITO/ ZnO / P3HT: PCBM / MoO{sub 3}/ Al by measuring AC impedance characteristics. Particularly, the power conversion efficiency (PCE), crystalline nature of the polymer, light absorption and the surface smoothness of P3HT: PCBM films are significantly improved after the annealing process. These results indicated the improvement in terms of PCE, interface smoothness between the P3HT: PCBM and MoO{sub 3} layers of the post annealed device originated from the decrease of series resistance between P3HT: PCBM layer and Al electrodes, which could be due to decrease in the effective life time of charge carriers.

  14. Heterojunction solar cell

    DOE Patents [OSTI]

    Olson, J.M.

    1994-08-30

    A high-efficiency single heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer. 1 fig.

  15. Heterojunction solar cell

    DOE Patents [OSTI]

    Olson, Jerry M.

    1994-01-01

    A high-efficiency single heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. The conversion effiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer.

  16. Selective observation of photo-induced electric fields inside different material components in bulk-heterojunction organic solar cell

    SciTech Connect (OSTI)

    Chen, Xiangyu; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

    2014-01-06

    By using electric-field-induced optical second-harmonic generation (EFISHG) measurement at two laser wavelengths of 1000 nm and 860 nm, we investigated carrier behavior inside the pentacene and C{sub 60} component of co-deposited pentacene:C{sub 60} bulk-heterojunctions (BHJs) organic solar cells (OSCs). The EFISHG experiments verified the presence of two carrier paths for electrons and holes in BHJs OSCs. That is, two kinds of electric fields pointing in opposite directions are identified as a result of the selectively probing of SHG activation from C{sub 60} and pentacene. Also, under open-circuit conditions, the transient process of the establishment of open-circuit voltage inside the co-deposited layer has been directly probed, in terms of photovoltaic effect. The EFISHG provides an additional promising method to study carrier path of electrons and holes as well as dissociation of excitons in BHJ OSCs.

  17. Perovskite solar cells with near 100% internal quantum efficiency based on large single crystalline grains and vertical bulk heterojunctions

    SciTech Connect (OSTI)

    Yang, Bin; Dyck, Ondrej; Poplawsky, Jonathan; Keum, Jong; Puretzky, Alexander; Das, Sanjib; Ivanov, Ilia; Rouleau, Christopher; Duscher, Gerd; Geohegan, David; Xiao, Kai

    2015-07-09

    Grain boundaries (GBs) as defects in the crystal lattice detrimentally impact the power conversion efficiency (PCE) of polycrystalline solar cells, particularly in recently emerging hybrid perovskites where non-radiative recombination processes lead to significant carrier losses. Here, the beneficial effects of activated vertical GBs are demonstrated by first growing large, vertically-oriented methylammonium lead tri-iodide (CH3NH3PbI3) single-crystalline grains. We show that infiltration of p-type doped 2 -7,7 -tetrakis(N,Ndi-p-methoxyphenylamine)-9,9-spirobifluorene (Spiro-OMeTAD) into CH3NH3PbI3 films along the GBs creates space charge regions to suppress non-radiative recombination and enhance carrier collection efficiency. Solar cells with such activated GBs yielded average PCE of 16.3 0.9%, which are among the best solution-processed perovskite devices. As an important alternative to growing ideal CH3NH3PbI3 single crystal films, which is difficult to achieve for such fast-crystallizing perovskites, activating GBs paves a way to design a new type of bulk heterojunction hybrid perovskite photovoltaics toward theoretical maximum PCE.

  18. Perovskite Solar Cells with Near 100% Internal Quantum Efficiency Based on Large Single Crystalline Grains and Vertical Bulk Heterojunctions

    SciTech Connect (OSTI)

    Yang, Bin; Dyck, Ondrej; Poplawsky, Jonathan; Keum, Jong; Puretzky, Alexander; Das, Sanjib; Ivanov, Ilia; Rouleau, Christopher; Duscher, Gerd; Geohegan, David; Xiao, Kai

    2015-07-09

    Grain boundaries (GBs) as defects in the crystal lattice detrimentally impact the power conversion efficiency (PCE) of polycrystalline solar cells, particularly in recently emerging hybrid perovskites where non-radiative recombination processes lead to significant carrier losses. Here, the beneficial effects of activated vertical GBs are demonstrated by first growing large, vertically-oriented methylammonium lead tri-iodide (CH3NH3PbI3) single-crystalline grains. We show that infiltration of p-type doped 2 -7,7 -tetrakis(N,Ndi-p-methoxyphenylamine)-9,9-spirobifluorene (Spiro-OMeTAD) into CH3NH3PbI3 films along the GBs creates space charge regions to suppress non-radiative recombination and enhance carrier collection efficiency. Solar cells with such activated GBs yielded average PCE of 16.3 ± 0.9%, which are among the best solution-processed perovskite devices. As an important alternative to growing ideal CH3NH3PbI3 single crystal films, which is difficult to achieve for such fast-crystallizing perovskites, activating GBs paves a way to design a new type of bulk heterojunction hybrid perovskite photovoltaics toward theoretical maximum PCE.

  19. Perovskite Solar Cells with Near 100% Internal Quantum Efficiency Based on Large Single Crystalline Grains and Vertical Bulk Heterojunctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yang, Bin; Dyck, Ondrej; Poplawsky, Jonathan; Keum, Jong; Puretzky, Alexander; Das, Sanjib; Ivanov, Ilia; Rouleau, Christopher; Duscher, Gerd; Geohegan, David; et al

    2015-07-09

    Grain boundaries (GBs) as defects in the crystal lattice detrimentally impact the power conversion efficiency (PCE) of polycrystalline solar cells, particularly in recently emerging hybrid perovskites where non-radiative recombination processes lead to significant carrier losses. Here, the beneficial effects of activated vertical GBs are demonstrated by first growing large, vertically-oriented methylammonium lead tri-iodide (CH3NH3PbI3) single-crystalline grains. We show that infiltration of p-type doped 2 -7,7 -tetrakis(N,Ndi-p-methoxyphenylamine)-9,9-spirobifluorene (Spiro-OMeTAD) into CH3NH3PbI3 films along the GBs creates space charge regions to suppress non-radiative recombination and enhance carrier collection efficiency. Solar cells with such activated GBs yielded average PCE of 16.3 ± 0.9%, whichmore » are among the best solution-processed perovskite devices. As an important alternative to growing ideal CH3NH3PbI3 single crystal films, which is difficult to achieve for such fast-crystallizing perovskites, activating GBs paves a way to design a new type of bulk heterojunction hybrid perovskite photovoltaics toward theoretical maximum PCE.« less

  20. Material Profile Influences in Bulk-Heterojunctions (Journal...

    Office of Scientific and Technical Information (OSTI)

    Material Profile Influences in Bulk-Heterojunctions Citation Details In-Document Search Title: Material Profile Influences in Bulk-Heterojunctions he morphology in mixed ...

  1. Enhanced performance of polymer:fullerene bulk heterojunction solar cells upon graphene addition

    SciTech Connect (OSTI)

    Robaeys, Pieter Dierckx, Wouter; Dexters, Wim; Spoltore, Donato; Drijkoningen, Jeroen; Bonaccorso, Francesco; Bourgeois, Emilie; D'Haen, Jan; Haenen, Ken; Manca, Jean V.; Nesladek, Milos; Liesenborgs, Jori; Van Reeth, Frank; Lombardo, Antonio; Ferrari, Andrea C.

    2014-08-25

    Graphene has potential for applications in solar cells. We show that the short circuit current density of P3HT (Poly(3-hexylthiophene-2,5-diyl):PCBM((6,6)-Phenyl C61 butyric acid methyl ester) solar cells is enhanced by 10% upon the addition of graphene, with a 15% increase in the photon to electric conversion efficiency. We discuss the performance enhancement by studying the crystallization of P3HT, as well as the electrical transport properties. We show that graphene improves the balance between electron and hole mobilities with respect to a standard P3HT:PCBM solar cell.

  2. Factors influencing photocurrent generation in organic bulk heterojunction

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    solar cells: interfacial energetics and blend microstructure | MIT-Harvard Center for Excitonics Factors influencing photocurrent generation in organic bulk heterojunction solar cells: interfacial energetics and blend microstructure April 29, 2009 at 3pm/36-428 Jenny Nelson Department of Physics Imperial College London jenny-nelson_000 abstract: The efficiency of photocurrent generation in conjugated polymer:small molecule blend solar is strongly influenced both by the energy level alignment

  3. Schottky diodes between Bi{sub 2}S{sub 3} nanorods and metal nanoparticles in a polymer matrix as hybrid bulk-heterojunction solar cells

    SciTech Connect (OSTI)

    Saha, Sudip K.; Pal, Amlan J.

    2015-07-07

    We report the use of metal-semiconductor Schottky junctions in a conjugated polymer matrix as solar cells. The Schottky diodes, which were formed between Bi{sub 2}S{sub 3} nanorods and gold nanoparticles, efficiently dissociated photogenerated excitons. The bulk-heterojunction (BHJ) devices based on such metal-semiconductor Schottky diodes in a polymer matrix therefore acted as an efficient solar cell as compared to the devices based on only the semiconductor nanorods in the polymer matrix or when gold nanoparticles were added separately to the BHJs. In the latter device, gold nanoparticles offered plasmonic enhancement due to an increased cross-section of optical absorption. We report growth and characteristics of the Schottky junctions formed through an intimate contact between Bi{sub 2}S{sub 3} nanorods and gold nanoparticles. We also report fabrication and characterization of BHJ solar cells based on such heterojunctions. We highlight the benefit of using metal-semiconductor Schottky diodes over only inorganic semiconductor nanorods or quantum dots in a polymer matrix in forming hybrid BHJ solar cells.

  4. Organic hybrid planar-nanocrystalline bulk heterojunctions

    DOE Patents [OSTI]

    Forrest, Stephen R.; Yang, Fan

    2011-03-01

    A photosensitive optoelectronic device having an improved hybrid planar bulk heterojunction includes a plurality of photoconductive materials disposed between the anode and the cathode. The photoconductive materials include a first continuous layer of donor material and a second continuous layer of acceptor material. A first network of donor material or materials extends from the first continuous layer toward the second continuous layer, providing continuous pathways for conduction of holes to the first continuous layer. A second network of acceptor material or materials extends from the second continuous layer toward the first continuous layer, providing continuous pathways for conduction of electrons to the second continuous layer. The first network and the second network are interlaced with each other. At least one other photoconductive material is interspersed between the interlaced networks. This other photoconductive material or materials has an absorption spectra different from the donor and acceptor materials.

  5. Organic hybrid planar-nanocrystalline bulk heterojunctions

    DOE Patents [OSTI]

    Forrest, Stephen R.; Yang, Fan

    2013-04-09

    A photosensitive optoelectronic device having an improved hybrid planar bulk heterojunction includes a plurality of photoconductive materials disposed between the anode and the cathode. The photoconductive materials include a first continuous layer of donor material and a second continuous layer of acceptor material. A first network of donor material or materials extends from the first continuous layer toward the second continuous layer, providing continuous pathways for conduction of holes to the first continuous layer. A second network of acceptor material or materials extends from the second continuous layer toward the first continuous layer, providing continuous pathways for conduction of electrons to the second continuous layer. The first network and the second network are interlaced with each other. At least one other photoconductive material is interspersed between the interlaced networks. This other photoconductive material or materials has an absorption spectra different from the donor and acceptor materials.

  6. p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells

    DOE Patents [OSTI]

    Irwin, Michael D; Buchholz, Donald B; Marks, Tobin J; Chang, Robert P. H.

    2014-11-25

    The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.

  7. High open-circuit voltage small-molecule p-DTS(FBTTh 2 )2.ICBA bulk heterojunction solar cells – morphology, excited-state dynamics, and photovoltaic performance

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ko Kyaw, Aung Ko; Gehrig, Dominik; Zhang, Jie; Huang, Ye; Bazan, Guillermo C.; Laquai, Frédéric; Nguyen, Thuc -Quyen

    2014-11-27

    The photovoltaic performance of bulk heterojunction solar cells using the solution-processable small molecule donor 7,7'-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b']dithiophene-2,6-diyl)bis(6-fluoro-4-(5'-hexyl-[2,2'-bithiophene]-5-yl)benzo[c][1,2,5]thiadiazole) (p-DTS(FBTTh2)2 in combination with indene-C60 bis-adduct (ICBA) as an acceptor is systematically optimized by altering the processing conditions. A high open-circuit voltage of 1 V, more than 0.2 V higher than that of a p-DTS(FBTTh2)2:PC70BM blend, is achieved. However, the power conversion efficiency remains around 5% and thus is lower than ~8% previously reported for p-DTS(FBTTh2)2:PC70BM. Transient absorption (TA) pump–probe spectroscopy over a wide spectral (Vis-NIR) and dynamic (fs to μs) range in combination with multivariate curve resolution analysis of the TA data reveals thatmore » generation of free charges is more efficient in the blend with PC70BM as an acceptor. In contrast, blends with ICBA create more coulombically bound interfacial charge transfer (CT) states, which recombine on the sub-nanosecond timescale by geminate recombination. Furthermore, the ns to μs charge carrier dynamics in p-DTS(FBTTh2)2:ICBA blends are only weakly intensity dependent implying a significant contribution of recombination from long-lived CT states and trapped charges, while those in p-DTS(FBTTh2)2:PC70BM decay via an intensity-dependent recombination mechanism indicating that spatially separated (free) charge carriers are observed, which can be extracted as photocurrent from the device.« less

  8. Mixed ternary heterojunction solar cell

    SciTech Connect (OSTI)

    Chen, Wen S.; Stewart, John M.

    1992-08-25

    A thin film heterojunction solar cell and a method of making it has a p-type layer of mixed ternary I-III-VI.sub.2 semiconductor material in contact with an n-type layer of mixed binary II-VI semiconductor material. The p-type semiconductor material includes a low resistivity copper-rich region adjacent the back metal contact of the cell and a composition gradient providing a minority carrier mirror that improves the photovoltaic performance of the cell. The p-type semiconductor material preferably is CuInGaSe.sub.2 or CuIn(SSe).sub.2.

  9. Effect of simultaneous electrical and thermal treatment on the performance of bulk heterojunction organic solar cell blended with organic salt

    SciTech Connect (OSTI)

    Sabri, Nasehah Syamin; Yap, Chi Chin; Yahaya, Muhammad; Salleh, Muhamad Mat

    2013-11-27

    This work presents the influence of simultaneous electrical and thermal treatment on the performance of organic solar cell blended with organic salt. The organic solar cells were composed of indium tin oxide as anode, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]: (6,6)-phenyl-C61 butyric acid methyl ester: tetrabutylammonium hexafluorophosphate blend as organic active layer and aluminium as cathode. The devices underwent a simultaneous fixed-voltage electrical and thermal treatment at different temperatures of 25, 50 and 75 °C. It was found that photovoltaic performance improved with the thermal treatment temperature. Accumulation of more organic salt ions in the active layer leads to broadening of p-n doped regions and hence higher built-in electric field across thin intrinsic layer. The simultaneous electrical and thermal treatment has been shown to be able to reduce the electrical treatment voltage.

  10. Material Profile Influences in Bulk-Heterojunctions

    SciTech Connect (OSTI)

    Roehling, John D.; Rochester, Christopher W.; Ro, Hyun W.; Wang, Peng; Majewski, Jaroslaw; Batenburg, Kees J.; Arslan, Ilke; Delongchamp, Dean M.; Moule, Adam J.

    2014-10-01

    he morphology in mixed bulk-heterojunction films are compared using three different quantitative measurement techniques. We compare the vertical composition changes using high-angle annular dark-field scanning transmission electron microscopy with electron tomography and neutron and x-ray reflectometry. The three measurement techniques yield qualita-tively comparable vertical concentration measurements. The presence of a metal cathode during thermal annealing is observed to alter the fullerene concentration throughout the thickness of the film for all measurements. However, the abso-lute vertical concentration of fullerene is quantitatively different for the three measurements. The origin of the quantitative measurement differences is discussed. The authors thank Luna Innovations, Inc. for donating the endohedral fullerenes used in this study and Plextronics for the P3HT. They are gratefully thank the National Science Foundation Energy for Sustainability Program, Award No. 0933435. This work benefited from the use of the Lujan Neutron Scattering Center at Los Alamos Neutron Science Center funded by the DOE Office of Basic Energy Sciences and Los Alamos National Laboratory under DOE Contract DE-AC52-06NA25396. This research was also supported in part by Laboratory Directed Research & Development program at PNNL. The Pacific Northwest National Laboratory is operated by Battelle for the US Department of Energy under contract DE-AC05-76RL01830.

  11. Heterojunction solar cell with passivated emitter surface

    DOE Patents [OSTI]

    Olson, J.M.; Kurtz, S.R.

    1994-05-31

    A high-efficiency heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer. 1 fig.

  12. Heterojunction solar cell with passivated emitter surface

    DOE Patents [OSTI]

    Olson, Jerry M.; Kurtz, Sarah R.

    1994-01-01

    A high-efficiency heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer.

  13. Method of fabricating an optoelectronic device having a bulk heterojunction

    DOE Patents [OSTI]

    Shtein, Max (Ann Arbor, MI); Yang, Fan (Princeton, NJ); Forrest, Stephen R. (Princeton, NJ)

    2008-10-14

    A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.

  14. Indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom; Ghosh, Amal K.

    1982-12-28

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  15. Recent progress in the morphology of bulk heterojunction photovoltaics

    SciTech Connect (OSTI)

    Brady, Michael A.; Su, Gregory M.; Chabinyc, Michael L.

    2011-10-06

    A review of current research in the characterization of the morphology of semiconducting polymer:fullerene bulk heterojunctions (BHJs) is presented. BHJs are complex blends of polymers and fullerenes with nanostructures that are highly dependent on materials, processing conditions, and post-treatments to films. Recent work on the study of the morphology of BHJs is surveyed. Emphasis is placed on emerging work on BHJs of poly(3-hexylthiophene), P3HT, and [6,6]-phenyl-C61-butyric acid methyl ester, PCBM, along with BHJs of donoracceptor polymers that have high power conversion efficiency.

  16. Method of fabricating an optoelectronic device having a bulk heterojunction

    DOE Patents [OSTI]

    Shtein, Max (Princeton, NJ); Yang, Fan (Princeton, NJ); Forrest, Stephen R. (Princeton, NJ)

    2008-09-02

    A method of fabricating an organic optoelectronic device having a bulk heterojunction comprises the steps of: depositing a first layer over a first electrode by organic vapor phase deposition, wherein the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer, wherein the interface of the second layer on the first layer forms a bulk heterojunction; and depositing a second electrode over the second layer to form the optoelectronic device. In another embodiment, a first layer having protrusions is deposited over the first electrode, wherein the first layer comprises a first organic small molecule material. For example, when the first layer is an electron donor layer, the first electrode is an anode, the second layer is an electron acceptor layer, and the second electrode is a cathode. As a further example, when the first layer is an electron acceptor layer, the first electrode is a cathode, the second layer is an electron donor layer, and the second electrode is an anode.

  17. Modeling of Silicon Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Luppina, P.; Lugli, P.; Goodnick, S.

    2015-06-14

    Here we present modeling results on crystalline Si/amorphous Si (a-Si) heterojunction solar cells using Sentaurus including various models for defect states in the a-Si barriers, as well as explicit models for the ITO emitter contact. We investigate the impact of the band offsets and barrier heights of the a-Si/c-Si interface, particularly in terms of the open circuit voltage. It is also shown that the solar cell performance is sensitively dependent on the quality of the a-Si in terms of defect states and their distribution, particularly on the emitter side. Finally, we have investigate the role of tunneling and thermionic emission across the heterointerface in terms of transport from the Si to the ITO contact layer

  18. Heterojunction for Multi-Junction Solar Cells - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Photovoltaic Solar Photovoltaic Advanced Materials Advanced Materials Find More Like This Return to Search Heterojunction for Multi-Junction Solar Cells Sandia National Laboratories Contact SNL About This Technology Publications: PDF Document Publication Market Sheet (1,250 KB) Technology Marketing SummarySandia National Laboratories has created a semiconductor p-n heterojunction for use in forming a photodetector that has applications for use in a multi-junction solar cell and detecting light

  19. GaP/Si heterojunction Solar Cells

    SciTech Connect (OSTI)

    Saive, R.; Chen, C.; Emmer, H.; Atwater, H.

    2015-05-11

    Improving the efficiency of solar cells requires the introduction of novel device concepts. Recent developments have shown that in Si solar cell technology there is still room for tremendous improvement. Using the heterojunction with intrinsic thin layer (HIT) approach 25.6 % power conversion efficiency was achieved. However, a-Si as a window and passivation layer comes with disadvantages as a-Si shows low conductivity and high parasitic absorption. Therefore, it is likely that using a crystalline material as window layer with high band gab and high mobility can further improve efficiency. We have studied GaP grown by MOCVD on Si with (001) and (112) orientation. We obtained crystalline layers with carrier mobility around 100 cm2/Vs and which passivate Si as confirmed by carrier lifetime measurements. We performed band alignment studies by X-ray photoelectron spectroscopy yielding a valence band offset of 0.3 eV. Comparing this value with the Schottky-model leads to an interface dipole of 0.59 eV. The open circuit voltage increases with increasing doping and is consistent with the theoretical open circuit voltage deduced from work function difference and interface dipole. We obtain an open circuit voltage of 0.38 V for n-doped GaP with doping levels in the order of 10^17 1/cm^3. In our next steps we will increase the doping level further in order to gain higher open circuit voltage. We will discuss the implications of these findings for GaP/Si heterojunction solar cells.

  20. High open-circuit voltage small-molecule p-DTS(FBTTh 2 )2.ICBA bulk heterojunction solar cells – morphology, excited-state dynamics, and photovoltaic performance

    SciTech Connect (OSTI)

    Ko Kyaw, Aung Ko; Gehrig, Dominik; Zhang, Jie; Huang, Ye; Bazan, Guillermo C.; Laquai, Frédéric; Nguyen, Thuc -Quyen

    2014-11-27

    The photovoltaic performance of bulk heterojunction solar cells using the solution-processable small molecule donor 7,7'-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b']dithiophene-2,6-diyl)bis(6-fluoro-4-(5'-hexyl-[2,2'-bithiophene]-5-yl)benzo[c][1,2,5]thiadiazole) (p-DTS(FBTTh2)2 in combination with indene-C60 bis-adduct (ICBA) as an acceptor is systematically optimized by altering the processing conditions. A high open-circuit voltage of 1 V, more than 0.2 V higher than that of a p-DTS(FBTTh2)2:PC70BM blend, is achieved. However, the power conversion efficiency remains around 5% and thus is lower than ~8% previously reported for p-DTS(FBTTh2)2:PC70BM. Transient absorption (TA) pump–probe spectroscopy over a wide spectral (Vis-NIR) and dynamic (fs to μs) range in combination with multivariate curve resolution analysis of the TA data reveals that generation of free charges is more efficient in the blend with PC70BM as an acceptor. In contrast, blends with ICBA create more coulombically bound interfacial charge transfer (CT) states, which recombine on the sub-nanosecond timescale by geminate recombination. Furthermore, the ns to μs charge carrier dynamics in p-DTS(FBTTh2)2:ICBA blends are only weakly intensity dependent implying a significant contribution of recombination from long-lived CT states and trapped charges, while those in p-DTS(FBTTh2)2:PC70BM decay via an intensity-dependent recombination mechanism indicating that spatially separated (free) charge carriers are observed, which can be extracted as photocurrent from the device.

  1. Nanostructured Electrodes For Organic Bulk Heterojunction Solar...

    Office of Scientific and Technical Information (OSTI)

    The nanotube addition leads to a 22% increase in the optimal blend layer thickness from 90 nm to 110 nm, enhancing the short circuit current density and photovoltaic device ...

  2. The effect of confinement on the crystalline microstructure of polymer: fullerene bulk heterojunctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ashraf, A.; Dissanayake, D. M. N. M.; Eisaman, M. D.

    2015-07-01

    We investigate the effect of confinement on the coherence length and the crystalline microstructure of the polymer component of polymer: fullerene bulk heterojunction thin films using grazing incidence wide angle x-ray scattering. We find that the polymer crystallite size decreases and the alignment of the molecules along the surface normal increases, as the thin-film thickness is reduced from 920nm to < 20nm and approaches the thin-film confinement regime. Furthermore, we find that the polymer crystallite size near the surface (air interface) is lower than the crystallite size in the bulk or the bottom (substrate interface) of bulk heterojunction films thickermore » than the confinement regime. Variation in polymer crystallite size can cause changes in charge carrier mobility and recombination rates, which in turn affect the performance of bulk heterojunction thin film devices such as photovoltaics and photodetectors« less

  3. The effect of confinement on the crystalline microstructure of polymer: fullerene bulk heterojunctions

    SciTech Connect (OSTI)

    Ashraf, A.; Dissanayake, D. M. N. M.; Eisaman, M. D.

    2015-07-01

    We investigate the effect of confinement on the coherence length and the crystalline microstructure of the polymer component of polymer: fullerene bulk heterojunction thin films using grazing incidence wide angle x-ray scattering. We find that the polymer crystallite size decreases and the alignment of the molecules along the surface normal increases, as the thin-film thickness is reduced from 920nm to < 20nm and approaches the thin-film confinement regime. Furthermore, we find that the polymer crystallite size near the surface (air interface) is lower than the crystallite size in the bulk or the bottom (substrate interface) of bulk heterojunction films thicker than the confinement regime. Variation in polymer crystallite size can cause changes in charge carrier mobility and recombination rates, which in turn affect the performance of bulk heterojunction thin film devices such as photovoltaics and photodetectors

  4. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-01-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n{sup ++} Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  5. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    SciTech Connect (OSTI)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  6. Method for forming indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom; Ghosh, Amal K.

    1984-03-13

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  7. In situ current voltage measurements for optimization of a novel fullerene acceptor in bulk heterojunction photovoltaics

    SciTech Connect (OSTI)

    Shuttle, Christopher G.; Treat, Neil D.; Fan, Jian; Varotto, Alessandro; Hawker, Craig J.; Wudl, Fred; Chabinyc, Michael L.

    2011-10-31

    The evaluation of the power conversion efficiency (PCE) of new materials for organic bulk heterojunction (BHJ) photovoltaics is difficult due to the large number of processing parameters possible. An efficient procedure to determine the optimum conditions for thermal treatment of polymer-based bulk heterojunction photovoltaic devices using in situ current-voltage measurements is presented. The performance of a new fullerene derivative, 1,9-dihydro-64,65-dihexyloxy-1,9-(methano[1,2] benzomethano)fullerene[60], in BHJ photovolatics with poly(3-hexylthiophene) (P3HT) was evaluated using this methodology. The device characteristics of BHJs obtained from the in situ method were found to be in good agreement with those from BHJs annealed using a conventional process. This fullerene has similar performance to 1-(3-methoxycarbonyl)propyl-1-phenyl-[6,6]-methano fullerene in BHJs with P3HT after thermal annealing. For devices with thickness of 70 nm, the short circuit current was 6.24 mA/cm with a fill factor of 0.53 and open circuit voltage of 0.65 V. The changes in the current-voltage measurements during thermal annealing suggest that the ordering process in P3HT dominates the improvement in power conversion efficiency.

  8. Quantitative comparison of organic photovoltaic bulk heterojunction photostability under laser illumination

    SciTech Connect (OSTI)

    Lesoine, Michael D.; Bobbitt, Jonathan M.; Carr, John A.; Elshobaki, Moneim; Chaudhary, Sumit; Smith, Emily A.

    2014-11-20

    The photostability of bulk heterojunction organic photovoltaic films containing a polymer donor and a fullerene-derivative acceptor was examined using resonance Raman spectroscopy and controlled laser power densities. The polymer donors were poly(3-hexylthiophene-2,5-diyl) (P3HT), poly[[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl] (PCDTBT), or poly({4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl}{3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl}) (PTB7). Four sample preparation methods were studied: (i) thin or (ii) thick films with fast solvent evaporation under nitrogen, (iii) thick films with slow solvent evaporation under nitrogen, and (iv) thin films dried under nitrogen followed by thermal annealing. Polymer order was assessed by monitoring a Raman peak’s full width at half-maximum and location as a function of illumination time and laser power densities from 2.5 × 103 to 2.5 × 105 W cm–2. Resonance Raman spectroscopy measurements show that before prolonged illumination, PCDTBT and PTB7 have the same initial order for all preparation conditions, while P3HT order improves with slow solvent drying or thermal annealing. All films exhibited changes to bulk heterojunction structure with 2.5 × 105 Wcm–2 laser illumination as measured by resonance Raman spectroscopy, and atomic force microscopy images show evidence of sample heating that affects the polymer over an area greater than the illumination profile. Furthermore, photostability data are important for proper characterization by techniques involving illumination and the development of devices suitable for real-world applications.

  9. Quantitative comparison of organic photovoltaic bulk heterojunction photostability under laser illumination

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lesoine, Michael D.; Bobbitt, Jonathan M.; Carr, John A.; Elshobaki, Moneim; Chaudhary, Sumit; Smith, Emily A.

    2014-11-20

    The photostability of bulk heterojunction organic photovoltaic films containing a polymer donor and a fullerene-derivative acceptor was examined using resonance Raman spectroscopy and controlled laser power densities. The polymer donors were poly(3-hexylthiophene-2,5-diyl) (P3HT), poly[[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl] (PCDTBT), or poly({4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl}{3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl}) (PTB7). Four sample preparation methods were studied: (i) thin or (ii) thick films with fast solvent evaporation under nitrogen, (iii) thick films with slow solvent evaporation under nitrogen, and (iv) thin films dried under nitrogen followed by thermal annealing. Polymer order was assessed by monitoring a Raman peak’s full width at half-maximum and location as a function of illumination time and laser powermore » densities from 2.5 × 103 to 2.5 × 105 W cm–2. Resonance Raman spectroscopy measurements show that before prolonged illumination, PCDTBT and PTB7 have the same initial order for all preparation conditions, while P3HT order improves with slow solvent drying or thermal annealing. All films exhibited changes to bulk heterojunction structure with 2.5 × 105 Wcm–2 laser illumination as measured by resonance Raman spectroscopy, and atomic force microscopy images show evidence of sample heating that affects the polymer over an area greater than the illumination profile. Furthermore, photostability data are important for proper characterization by techniques involving illumination and the development of devices suitable for real-world applications.« less

  10. Light Trapping for High Efficiency Heterojunction Crystalline Si Solar Cells: Preprint

    SciTech Connect (OSTI)

    Wang, Q.; Xu, Y.; Iwaniczko, E.; Page, M.

    2011-04-01

    Light trapping plays an important role to achieve high short circuit current density (Jsc) and high efficiency for amorphous/crystalline Si heterojunction solar cells. Si heterojunction uses hydrogenated amorphous Si for emitter and back contact. This structure of solar cell posses highest open circuit voltage of 0.747 V at one sun for c-Si based solar cells. It also suggests that over 25% record-high efficiency is possible with further improvement of Jsc. Light trapping has two important tasks. The first one is to reduce the surface reflectance of light to zero for the solar spectrum that Si has a response. The second one is to increase the effective absorption length to capture all the photon. For Si heterojunction solar cell, surface texturing, anti-reflectance indium tin oxides (ITO) layer at the front and back are the key area to improve the light trapping.

  11. High-efficiency silicon heterojunction solar cells: Status and perspectives

    SciTech Connect (OSTI)

    De Wolf, S.

    2015-04-27

    Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups are reporting devices with conversion efficiencies well over 20 % on n-type wafers, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short- wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long-wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metalisation grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical transport requirements. The

  12. High-efficiency silicon heterojunction solar cells: Status and perspectives

    SciTech Connect (OSTI)

    De Wolf, S.; Geissbuehler, J.; Loper, P.; Martin de Nicholas, S.; Seif, J.; Tomasi, A.; Ballif, C.

    2015-05-11

    Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups are reporting devices with conversion efficiencies well over 20 % on both-sides contacted n-type cells, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short-wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long- wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metallization grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical

  13. 22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

    SciTech Connect (OSTI)

    Geissbühler, Jonas Werner, Jérémie; Martin de Nicolas, Silvia; Hessler-Wyser, Aïcha; Tomasi, Andrea; Niesen, Bjoern; De Wolf, Stefaan; Barraud, Loris; Despeisse, Matthieu; Nicolay, Sylvain; Ballif, Christophe

    2015-08-24

    Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

  14. Structural and Optical Investigations of GaN-Si Interface for a Heterojunction Solar Cell

    SciTech Connect (OSTI)

    Williams, Joshua J.; Jeffries, April M.; Bertoni, Mariana I.; Williamson, Todd L.; Bowden, Stuart G.; Honsberg, Christiana B.

    2014-06-08

    In recent years the development of heterojunction silicon based solar cells has gained much attention, lea largely by the efforts of Panasonic’s HIT cell. The success of the HIT cell prompts the scientific exploration of other thin film layers, besides the industrially accepted amorphous silicon. In this paper we report upon the use of gallium nitride, grown by MBE at “low temperatures” (~200°C), on silicon wafers as one possible candidate for making a heterojunction solar cell; the first approximation of band alignments between GaN and Si; and the material quality as determined by X-ray diffraction.

  15. Petascale Simulations of the Morphology and the Molecular Interface of Bulk Heterojunctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Carrillo, Jan-Michael Y.; Seibers, Zach; Kumar, Rajeev; Matheson, Michael A.; Ankner, John F.; Goswami, Monojoy; Bhaskaran-Nair, Kiran; Shelton, William A.; Sumpter, Bobby G.; Kilbey, S. Michael

    2016-07-14

    Understanding how additives interact and segregate within bulk heterojunction (BHJ) thin films is critical for exercising control over structure at multiple length scales and delivering improvements in photovoltaic performance. The morphological evolution of poly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) blends that are commensurate with the size of a BHJ thin film is examined using petascale coarse-grained molecular dynamics simulations. When comparing 2 component and 3 component systems containing short P3HT chains as additives undergoing thermal annealing we demonstrate that the short chains alter the morphol- ogy in apparently useful ways: They efficiently migrate to the P3HT/PCBM interface, increasingmore » the P3HT domain size and interfacial area. Simulation results agree with depth profiles determined from neutron reflectometry measurements that reveal PCBM enrichment near substrate and air interfaces, but a decrease in that PCBM enrich- ment when a small amount of short P3HT chains are integrated into the BHJ blend. Atomistic simulations of the P3HT/PCBM blend interfaces show a non-monotonic dependence of the interfacial thickness as a function of number of repeat units in the oligomeric P3HT additive, and the thiophene rings orient parallel to the interfacial plane as they approach the PCBM domain. Using the nanoscale geometries of the P3HT oligomers, LUMO and HOMO energy levels calculated by density functional theory are found to be invariant across the donor/acceptor interface. Finally, these connections between additives, processing, and morphology at all length scales are generally useful for efforts to improve device performance.« less

  16. Transparent electrodes in silicon heterojunction solar cells: Influence on contact passivation

    SciTech Connect (OSTI)

    Tomasi, Andrea; Sahli, Florent; Seif, Johannes Peter; Fanni, Lorenzo; de Nicolas Agut, Silvia Martin; Geissbuhler, Jonas; Paviet-Salomon, Bertrand; Nicolay, Sylvain; Barraud, Loris; Niesen, Bjoern; De Wolf, Stefaan; Ballif, Christophe

    2015-10-26

    Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solar cells. As a result, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.

  17. Transparent electrodes in silicon heterojunction solar cells: Influence on contact passivation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Tomasi, Andrea; Sahli, Florent; Seif, Johannes Peter; Fanni, Lorenzo; de Nicolas Agut, Silvia Martin; Geissbuhler, Jonas; Paviet-Salomon, Bertrand; Nicolay, Sylvain; Barraud, Loris; Niesen, Bjoern; et al

    2015-10-26

    Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solarmore » cells. As a result, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.« less

  18. Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

    DOE Patents [OSTI]

    Feng, Tom; Ghosh, Amal K.

    1980-01-01

    Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

  19. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  20. Electronic properties of Mn-phthalocyanine–C{sub 60} bulk heterojunctions: Combining photoemission and electron energy-loss spectroscopy

    SciTech Connect (OSTI)

    Roth, Friedrich; Lupulescu, Cosmin; Darlatt, Erik; Gottwald, Alexander; Eberhardt, Wolfgang

    2015-11-14

    The electronic properties of co-evaporated mixtures (blends) of manganese phthalocyanine and the fullerene C{sub 60} (MnPc:C{sub 60}) have been studied as a function of the concentration of the two constituents using two supplementary electron spectroscopic methods, photoemission spectroscopy (PES) and electron energy-loss spectroscopy (EELS) in transmission. Our PES measurements provide a detailed picture of the electronic structure measured with different excitation energies as well as different mixing ratios between MnPc and C{sub 60}. Besides a relative energy shift, the occupied electronic states of the two materials remain essentially unchanged. The observed energy level alignment is different compared to that of the related CuPc:C{sub 60} bulk heterojunction. Moreover, the results from our EELS investigations show that, despite the rather small interface interaction, the MnPc related electronic excitation spectrum changes significantly by admixing C{sub 60} to MnPc thin films.

  1. Dominance of interface chemistry over the bulk properties in determining the electronic structure of epitaxial metal/perovskite oxide heterojunctions

    SciTech Connect (OSTI)

    Chambers, Scott A.; Du, Yingge; Gu, Meng; Droubay, Timothy C.; Hepplestone, Steven; Sushko, Petr

    2015-06-09

    We show that despite very similar crystallographic properties and work function values in the bulk, epitaxial Fe and Cr metallizations on Nb:SrTiO3(001) generate completely different heterojunction electronic properties. Cr is Ohmic whereas Fe forms a Schottky barrier with a barrier height of 0.50 eV. This contrast arises because of differences in interface chemistry. In contrast to Cr [Chambers, S. A. et al., Adv. Mater. 2013, 25, 4001.], Fe exhibits a +2 oxidation state and occupies Ti sites in the perovskite lattice, resulting in negligible charge transfer to Ti, upward band bending, and Schottky barrier formation. The differences between Cr and Fe are understood by performing first-principles calculations of the energetics of defect formation which corroborate the observed interface chemistry and structure.

  2. Indium tin oxide and indium phosphide heterojunction nanowire array solar cells

    SciTech Connect (OSTI)

    Yoshimura, Masatoshi Nakai, Eiji; Fukui, Takashi; Tomioka, Katsuhiro; PRESTO, Japan Science and Technology Agency , Honcho Kawaguchi, 3320012 Saitama

    2013-12-09

    Heterojunction solar cells were formed with a position-controlled InP nanowire array sputtered with indium tin oxide (ITO). The ITO not only acted as a transparent electrode but also as forming a photovoltaic junction. The devices exhibited an open-circuit voltage of 0.436?V, short-circuit current of 24.8?mA/cm{sup 2}, and fill factor of 0.682, giving a power conversion efficiency of 7.37% under AM1.5?G illumination. The internal quantum efficiency of the device was higher than that of the world-record InP cell in the short wavelength range.

  3. High efficiency solar cells combining a perovskite and a silicon heterojunction solar cells via an optical splitting system

    SciTech Connect (OSTI)

    Uzu, Hisashi E-mail: npark@skku.edu; Ichikawa, Mitsuru; Hino, Masashi; Nakano, Kunihiro; Meguro, Tomomi; Yamamoto, Kenji; Hernández, José Luis; Kim, Hui-Seon; Park, Nam-Gyu E-mail: npark@skku.edu

    2015-01-05

    We have applied an optical splitting system in order to achieve very high conversion efficiency for a full spectrum multi-junction solar cell. This system consists of multiple solar cells with different band gap optically coupled via an “optical splitter.” An optical splitter is a multi-layered beam splitter with very high reflection in the shorter-wave-length range and very high transmission in the longer-wave-length range. By splitting the incident solar spectrum and distributing it to each solar cell, the solar energy can be managed more efficiently. We have fabricated optical splitters and used them with a wide-gap amorphous silicon (a-Si) solar cell or a CH{sub 3}NH{sub 3}PbI{sub 3} perovskite solar cell as top cells, combined with mono-crystalline silicon heterojunction (HJ) solar cells as bottom cells. We have achieved with a 550 nm cutoff splitter an active area conversion efficiency of over 25% using a-Si and HJ solar cells and 28% using perovskite and HJ solar cells.

  4. Silicon Heterojunction Solar Cells: Temperature Impact on Passivation and Performance

    SciTech Connect (OSTI)

    Seif, J.; Krishnamani, G.; Demaurex, B.; Martin de Nicholas, S.; Holm, N.; Ballif, C.; De Wolf, S.

    2015-03-23

    Photovoltaic devices deployed in the field can reach operation temperatures (T) as high as 90 °C [1]. Hence, their temperature coefficients (TC1) are of great practical importance as they determine their energy yield. In this study we concentrate on T-related lifetime variations of amorphous/crystalline interfaces and study their influence on the TCs of the individual solar cell parameters. We find that both the open-circuit voltage (Voc) and fill factor (FF) are influenced by these lifetime variations. However, this is only a minor effect compared to the dominant increase of the intrinsic carrier density and the related increase in dark saturation current density. Additionally, in this paper we will show that the TCVoc does not depend solely on the initial value of the Voc [2, 3], but that the structure of the device has to be considered as well.

  5. Copper migration in CdTe heterojunction solar cells

    SciTech Connect (OSTI)

    Chou, H.C.; Rohatgi, A.; Jokerst, N.M.; Thomas, E.W.; Kamra, S.

    1996-07-01

    CdTe solar cells were fabricated by depositing a Au/Cu contact with Cu thickness in the range of 50 to 150A on polycrystalline CdTe/CdS/SnO{sub 2} glass structures. The increase in Cu thickness improves ohmic contact and reduces series resistance (R{sub s}), but the excess Cu tends to diffuse into CdTe and lower shunt resistance (R{sub sh}) and cell performance. Light I-V and secondary ion mass spectroscopy (SIMS) measurements were performed to understand the correlations between the Cu contact thickness, the extent of Cu incorporation in the CdTe cells, and its impact on the cell performance. The CdTe/CdS/SnO{sub 2} glass, CdTe/CdS/GaAs, and CdTe/GaAs structures were prepared in an attempt to achieve CdTe films with different degrees of crystallinity and grain size. A large grain polycrystalline CdTe thin film solar cell was obtained for the first time by selective etching the GaAs substrate coupled with the film transfer onto a glass substrate. SIMS measurement showed that poor crystallinity and smaller grain size of the CdTe film promotes Cu diffusion and decreases the cell performance. Therefore, grain boundaries are the main conduits for Cu migration and larger CdTe grain size or alternate method of contact formation can mitigate the adverse effect of Cu and improve the cell performance. 15 refs., 1 fig.,6 tabs.

  6. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-11-01

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.

  7. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-11-01

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing,more » between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.« less

  8. Evaluation of transition metal oxide as carrier-selective contacts for silicon heterojunction solar cells

    SciTech Connect (OSTI)

    Ding, L.; Boccard, Matthieu; Holman, Zachary; Bertoni, M.

    2015-04-06

    "Reducing light absorption in the non-active solar cell layers, while enabling the extraction of the photogenerated minority carriers at quasi-Fermi levels are two key factors to improve current generation and voltage, and therefore efficiency of silicon heterojunction solar devices. To address these two critical aspects, transition metal oxide materials have been proposed as alternative to the n- and p-type amorphous silicon used as electron and hole selective contacts, respectively. Indeed, transition metal oxides such as molybdenum oxide, titanium oxide, nickel oxide or tungsten oxide combine a wide band gap typically over 3 eV with a band structure and theoretical band alignment with silicon that results in high transparency to the solar spectrum and in selectivity for the transport of only one carrier type. Improving carrier extraction or injection using transition metal oxide has been a topic of investigation in the field of organic solar cells and organic LEDs; from these pioneering works a lot of knowledge has been gained on materials properties, ways to control these during synthesis and deposition, and their impact on device performance. Recently, the transfer of some of this knowledge to silicon solar cells and the successful application of some metal oxide to contact heterojunction devices have gained much attention. In this contribution, we investigate the suitability of various transition metal oxide films (molybdenum oxide, titanium oxide, and tungsten oxide) deposited either by thermal evaporation or sputtering as transparent hole or electron selective transport layer for silicon solar cells. In addition to systematically characterize their optical and structural properties, we use photoemission spectroscopy to relate compound stoichiometry to band structure and characterize band alignment to silicon. The direct silicon/metal oxide interface is further analyzed by quasi-steady state photoconductance decay method to assess the quality of surface

  9. Interfacial Engineering for Highly Efficient-Conjugated Polymer-Based Bulk Heterojunction Photovoltaic Devices

    SciTech Connect (OSTI)

    Alex Jen; David Ginger; Christine Luscombe; Hong Ma

    2012-04-02

    The aim of our proposal is to apply interface engineering approach to improve charge extraction, guide active layer morphology, improve materials compatibility, and ultimately allow the fabrication of high efficiency tandem cells. Specifically, we aim at developing: i. Interfacial engineering using small molecule self-assembled monolayers ii. Nanostructure engineering in OPVs using polymer brushes iii. Development of efficient light harvesting and high mobility materials for OPVs iv. Physical characterization of the nanostructured systems using electrostatic force microscopy, and conducting atomic force microscopy v. All-solution processed organic-based tandem cells using interfacial engineering to optimize the recombination layer currents vi. Theoretical modeling of charge transport in the active semiconducting layer The material development effort is guided by advanced computer modeling and surface/ interface engineering tools to allow us to obtain better understanding of the effect of electrode modifications on OPV performance for the investigation of more elaborate device structures. The materials and devices developed within this program represent a major conceptual advancement using an integrated approach combining rational molecular design, material, interface, process, and device engineering to achieve solar cells with high efficiency, stability, and the potential to be used for large-area roll-to-roll printing. This may create significant impact in lowering manufacturing cost of polymer solar cells for promoting clean renewable energy use and preventing the side effects from using fossil fuels to impact environment.

  10. Doped hole transport layer for efficiency enhancement in planar heterojunction organolead trihalide perovskite solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Qi; Bi, Cheng; Huang, Jinsong

    2015-05-06

    We demonstrated the efficiency of a solution-processed planar heterojunction organometallic trihalide perovskite solar cell can be increased to 17.5% through doping the hole transporting layer for reducing the resistivity. Doped Poly(triaryl amine) (PTAA) by 2,3,5,6-Tetrafluoro-7,7,8,8-Tetracyanoquinodimethane (F4-TCNQ) reduced device series resistance by three-folds, increasing the device fill factor to 74%, open circuit voltage to 1.09 V without sacrificing the short circuit current. As a result, this study reveals that the high resistivity of currently broadly applied polymer hole transport layer limits the device efficiency, and points a new direction to improve the device efficiency.

  11. Low temperature front surface passivation of interdigitated back contact silicon heterojunction solar cell

    SciTech Connect (OSTI)

    Shu, Brent; Das, Ujjwal; Jani, Omkar; Hegedus, Steve; Birkmire, Robert

    2009-06-08

    The interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell requires a low temperature front surface passivation/anti-reflection structure. Conventional silicon surface passivation using SiO2 or a-SiNx is performed at temperature higher than 400C, which is not suitable for the IBC-SHJ cell. In this paper, we propose a PECVD a-Si:H/a-SiNx:H/a-SiC:H stack structure to passivate the front surface of crystalline silicon at low temperature. The optical properties and passivation quality of this structure are characterized and solar cells using this structure are fabricated. With 2 nm a-Si:H layer, the stack structure exhibits stable passivation with effective minority carrier lifetime higher than 2 ms, and compatible with IBC-SHJ solar cell processing. A critical advantage of this structure is that the SiC allows it to be HF resistant, thus it can be deposited as the first step in the process. This protects the a-Si/c-Si interface and maintains a low surface recombination velocity.

  12. Low-temperature high-mobility amorphous IZO for silicon heterojunction solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Morales-Masis, Monica; Martin De Nicolas, Silvia; Holovsky, Jakub; De Wolf, Stefaan; Ballif, Christophe

    2015-07-13

    Parasitic absorption in the transparent conductive oxide (TCO) front electrode is one of the limitations of silicon heterojunction (SHJ) solar cells efficiency. To avoid such absorption while retaining high conductivity, TCOs with high electron mobility are preferred over those with high carrier density. Here, we demonstrate improved SHJ solar cell efficiencies by applying high-mobility amorphous indium zinc oxide (a-IZO) as the front TCO. We sputtered a-IZO at low substrate temperature and low power density and investigated the optical and electrical properties, as well as subband tail formation-quantified by the Urbach energy (EU)-as a function of the sputtering oxygen partial pressure.more » We obtain an EU as low as 128 meV for films with the highest Hall mobility of 60 cm2/Vs. When comparing the performance of a-IZO films with indium tin oxide (ITO) and hydrogenated indium oxide (IO:H), we find that IO:H (115 cm2/Vs) exhibits a similar EU of 130 meV, while ITO (25 cm2/Vs) presents a much larger EU of up to 270 meV. The high film quality, indicated by the low EU, the high mobility, and low free carrier absorption of the developed a-IZO electrodes, result in a significant current improvement, achieving conversion efficiencies over 21.5%, outperforming those with standard ITO.« less

  13. Well-Passivated a-Si:H Back Contacts for Double-Heterojunction Silicon Solar Cells: Preprint

    SciTech Connect (OSTI)

    Page, M. R.; Iwaniczko, E.; Xu, Y.; Wang, Q.; Yan, Y.; Roybal, L.; Branz, H. M.; Wang, T. H.

    2006-05-01

    We have developed hydrogenated amorphous silicon (a Si:H) back contacts to both p- and n-type silicon wafers, and employed them in double-heterojunction solar cells. These contacts are deposited entirely at low temperature (<250 C) and replace the standard diffused or alloyed back-surface-field contacts used in single-heterojunction (front-emitter only) cells. High-quality back contacts require excellent surface passivation, indicated by a low surface recombination velocity of minority-carriers (S) or a high open-circuit voltage (Voc). The back contact must also provide good conduction for majority carriers to the external circuit, as indicated by a high light I-V fill factor. We use hot-wire chemical vapor deposition (HWCVD) to grow a-Si:H layers for both the front emitters and back contacts. Our improved a-Si:H back contacts contribute to our recent achievement of a confirmed 18.2% efficiency in double-heterojunction silicon solar cells on p type textured silicon wafers.

  14. Methods for forming thin-film heterojunction solar cells from I-III-VI[sub 2

    DOE Patents [OSTI]

    Mickelsen, R.A.; Chen, W.S.

    1982-06-15

    An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (1) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI[sub 2] chalcopyrite ternary materials which is vacuum deposited in a thin composition-graded'' layer ranging from on the order of about 2.5 microns to about 5.0 microns ([approx equal]2.5[mu]m to [approx equal]5.0[mu]m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (2), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, is allowed.

  15. Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

    DOE Patents [OSTI]

    Mickelsen, Reid A.; Chen, Wen S.

    1985-08-13

    An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

  16. Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

    DOE Patents [OSTI]

    Mickelsen, Reid A.; Chen, Wen S.

    1982-01-01

    An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5.mu.m to .congruent.5.0.mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

  17. Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}

    DOE Patents [OSTI]

    Mickelsen, R.A.; Chen, W.S.

    1985-08-13

    An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.

  18. Low-temperature high-mobility amorphous IZO for silicon heterojunction solar cells

    SciTech Connect (OSTI)

    Morales-Masis, Monica; Martin De Nicolas, Silvia; Holovsky, Jakub; De Wolf, Stefaan; Ballif, Christophe

    2015-07-13

    Parasitic absorption in the transparent conductive oxide (TCO) front electrode is one of the limitations of silicon heterojunction (SHJ) solar cells efficiency. To avoid such absorption while retaining high conductivity, TCOs with high electron mobility are preferred over those with high carrier density. Here, we demonstrate improved SHJ solar cell efficiencies by applying high-mobility amorphous indium zinc oxide (a-IZO) as the front TCO. We sputtered a-IZO at low substrate temperature and low power density and investigated the optical and electrical properties, as well as subband tail formation-quantified by the Urbach energy (EU)-as a function of the sputtering oxygen partial pressure. We obtain an EU as low as 128 meV for films with the highest Hall mobility of 60 cm2/Vs. When comparing the performance of a-IZO films with indium tin oxide (ITO) and hydrogenated indium oxide (IO:H), we find that IO:H (115 cm2/Vs) exhibits a similar EU of 130 meV, while ITO (25 cm2/Vs) presents a much larger EU of up to 270 meV. The high film quality, indicated by the low EU, the high mobility, and low free carrier absorption of the developed a-IZO electrodes, result in a significant current improvement, achieving conversion efficiencies over 21.5%, outperforming those with standard ITO.

  19. Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell

    SciTech Connect (OSTI)

    Nagamatsu, Ken A. Man, Gabriel; Jhaveri, Janam; Berg, Alexander H.; Kahn, Antoine; Wagner, Sigurd; Sturm, James C.; Avasthi, Sushobhan; Sahasrabudhe, Girija; Schwartz, Jeffrey

    2015-03-23

    In this work, we use an electron-selective titanium dioxide (TiO{sub 2}) heterojunction contact to silicon to block minority carrier holes in the silicon from recombining at the cathode contact of a silicon-based photovoltaic device. We present four pieces of evidence demonstrating the beneficial effect of adding the TiO{sub 2} hole-blocking layer: reduced dark current, increased open circuit voltage (V{sub OC}), increased quantum efficiency at longer wavelengths, and increased stored minority carrier charge under forward bias. The importance of a low rate of recombination of minority carriers at the Si/TiO{sub 2} interface for effective blocking of minority carriers is quantitatively described. The anode is made of a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) heterojunction to silicon which forms a hole selective contact, so that the entire device is made at a maximum temperature of 100 °C, with no doping gradients or junctions in the silicon. A low rate of recombination of minority carriers at the Si/TiO{sub 2} interface is crucial for effective blocking of minority carriers. Such a pair of complementary carrier-selective heterojunctions offers a path towards high-efficiency silicon solar cells using relatively simple and near-room temperature fabrication techniques.

  20. Determination of heterojunction band offsets between CdS bulk and PbS quantum dots using photoelectron spectroscopy

    SciTech Connect (OSTI)

    Bhandari, Khagendra P.; Mahabaduge, Hasitha; Ellingson, Randy J.; Choi, Hyekyoung; Jeong, Sohee

    2014-09-29

    Photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (ΔE{sub V}) of a CdS/PbS quantum dot (QD) heterojunction for which the PbS QD layer was deposited using solution based layer-by-layer dip coating method on top of RF magnetron sputtered CdS. A value of ΔE{sub V} = 1.73 eV was obtained using the Cd 3d and Pb 4f energy levels as references. Given the band gap energies of the CdS and PbS-QD layers, the conduction band offset ΔE{sub C} was determined to be 0.71 eV.

  1. Efficient Crystalline Si Solar Cell with Amorphous/Crystalline Silicon Heterojunction as Back Contact: Preprint

    SciTech Connect (OSTI)

    Nemeth, B.; Wang, Q.; Shan, W.

    2012-06-01

    We study an amorphous/crystalline silicon heterojunction (Si HJ) as a back contact in industrial standard p-type five-inch pseudo-square wafer to replace Al back surface field (BSF) contact. The best efficiency in this study is over 17% with open-circuit (Voc) of 0.623 V, which is very similar to the control cell with Al BSF. We found that Voc has not been improved with the heterojunction structure in the back. The typical minority carrier lifetime of these wafers is on the order of 10 us. We also found that the doping levels of p-layer affect the FF due to conductivity and band gap shifting, and an optimized layer is identified. We conclude that an amorphous/crystalline silicon heterojunction can be a very promising structure to replace Al BSF back contact.

  2. Amorphous Silicon Carbide Passivating Layers to Enable Higher Processing Temperature in Crystalline Silicon Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Boccard, Mathieu; Holman, Zachary

    2015-04-06

    "Very efficient crystalline silicon (c-Si) solar cells have been demonstrated when thin layers of intrinsic and doped hydrogenated amorphous silicon (a-Si:H) are used for passivation and carrier selectivity in a heterojunction device. One limitation of this device structure is the (parasitic) absorption in the front passivation/collection a-Si:H layers; another is the degradation of the a-Si:H-based passivation upon temperature, limiting the post-processes to approximately 200°C thus restricting the contacting possibilities and potential tandem device fabrication. To alleviate these two limitations, we explore the potential of amorphous silicon carbide (a-SiC:H), a widely studied material in use in standard a-Si:H thin-film solar cells, which is known for its wider bandgap, increased hydrogen content and stronger hydrogen bonding compared to a-Si:H. We study the surface passivation of solar-grade textured n-type c-Si wafers for symmetrical stacks of 10-nm-thick intrinsic a-SiC:H with various carbon content followed by either p-doped or n-doped a-Si:H (referred to as i/p or i/n stacks). For both doping types, passivation (assessed through carrier lifetime measurements) is degraded by increasing the carbon content in the intrinsic a-SiC:H layer. Yet, this hierarchy is reversed after annealing at 350°C or more due to drastic passivation improvements upon annealing when an a-SiC:H layer is used. After annealing at 350°C, lifetimes of 0.4 ms and 2.0 ms are reported for i/p and i/n stacks, respectively, when using an intrinsic a-SiC:H layer with approximately 10% of carbon (initial lifetimes of 0.3 ms and 0.1 ms, respectively, corresponding to a 30% and 20-fold increase, respectively). For stacks of pure a-Si:H material the lifetimes degrade from 1.2 ms and 2.0 ms for i/p and i/n stacks, respectively, to less than 0.1 ms and 1.1 ms (12-fold and 2-fold decrease, respectively). For complete solar cells using pure a-Si:H i/p and i/n stacks, the open-circuit voltage (Voc

  3. Formation of BaSi{sub 2} heterojunction solar cells using transparent MoO{sub x} hole transport layers

    SciTech Connect (OSTI)

    Du, W.; Takabe, R.; Baba, M.; Takeuchi, H.; Toko, K.; Hara, K. O.; Usami, N.; Suemasu, T.

    2015-03-23

    Heterojunction solar cells that consist of 15?nm thick molybdenum trioxide (MoO{sub x}, x?solar cell applications.

  4. 19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

    2014-09-25

    We demonstrate an InP heterojunction solar cell employing an ultrathin layer (~10 nm) of amorphous TiO2 deposited at 120°C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. Lastly, a hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm2 and a high power conversion efficiency of 19.2%.

  5. Structural and optoelectronic properties of hybrid bulk-heterojunction materials based on conjugated small molecules and mesostructured TiO{sub 2}

    SciTech Connect (OSTI)

    Phan, Hung [Department of Chemistry and Biochemistry, University of California, Santa Barbara, California 93106 (United States); Jahnke, Justin P.; Chmelka, Bradley F. [Department of Chemical Engineering, University of California, Santa Barbara, California 93106 (United States); Nguyen, Thuc-Quyen, E-mail: quyen@chem.ucsb.edu [Department of Chemistry and Biochemistry, University of California, Santa Barbara, California 93106 (United States); Department of Chemistry, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia)

    2014-06-09

    Improved hybrid bulk-heterojunction materials was fabricated by spin-casting a benchmark conjugated small molecule, namely, 3,6-bis(5-(benzofuran-2-yl)thiophen-2-yl)-2,5-bis(2-ethylhexyl) pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione (DPP(TBFu){sub 2}), into mesostructured TiO{sub 2}. Due to both a reduced molecular size and less hydrophobic nature of the conjugated molecules (relative to conjugated polymers), homogeneous and improved infiltration into the mesoporous TiO{sub 2} are achieved without the need for pre-treatment of the TiO{sub 2}. Remarkably, this small molecule can realize loadings of up to 25% of the total pore volume2.5 the typical loadings achieved for conjugated polymers. The small molecule loading was determined using dynamic secondary ion mass spectroscopy and absorption spectroscopy. Further characterization such as charge transfer and nanoscale conducting atomic force microscopy helps to demonstrate the promise and viability of small molecule donors for hybrid optoelectronic devices.

  6. Low cost back contact heterojunction solar cells on thin c-Si wafers. Integrating laser and thin film processing for improved manufacturability

    SciTech Connect (OSTI)

    Hegedus, Steven S.

    2015-09-08

    An interdigitated back contact (IBC) Si wafer solar cell with deposited a-Si heterojunction (HJ) emitter and contacts is considered the ultimate single junction Si solar cell design. This was confirmed in 2014 by both Panasonic and Sharp Solar producing IBC-HJ cells breaking the previous record Si solar cell efficiency of 25%. But manufacturability at low cost is a concern for the complex IBC-HJ device structure. In this research program, our goals were to addressed the broad industry need for a high-efficiency c-Si cell that overcomes the dominant module cost barriers by 1) developing thin Si wafers synthesized by innovative, kerfless techniques; 2) integrating laser-based processing into most aspects of solar cell fabrication, ensuring high speed and low thermal budgets ; 3) developing an all back contact cell structure compatible with thin wafers using a simplified, low-temperature fabrication process; and 4) designing the contact patterning to enable simplified module assembly. There were a number of significant achievements from this 3 year program. Regarding the front surface, we developed and applied new method to characterize critical interface recombination parameters including interface defect density Dit and hole and electron capture cross-section for use as input for 2D simulation of the IBC cell to guide design and loss analysis. We optimized the antireflection and passivation properties of the front surface texture and a-Si/a-SiN/a-SiC stack depositions to obtain a very low (< 6 mA/cm2) front surface optical losses (reflection and absorption) while maintaining excellent surface passivation (SRV<5 cm/s). We worked with kerfless wafer manufacturers to apply defect-engineering techniques to improve bulk minority-carrier lifetime of thin kerfless wafers by both reducing initial impurities during growth and developing post-growth gettering techniques. This led insights about the kinetics of nickel, chromium, and dislocations in PV-grade silicon and to

  7. Low cost back contact heterojunction solar cells on thin c-Si wafers. integrating laser and thin film processing for improved manufacturability

    SciTech Connect (OSTI)

    Hegedus, Steven S.

    2015-09-08

    An interdigitated back contact (IBC) Si wafer solar cell with deposited a-Si heterojunction (HJ) emitter and contacts is considered the ultimate single junction Si solar cell design. This was confirmed in 2014 by both Panasonic and Sharp Solar producing IBC-HJ cells breaking the previous record Si solar cell efficiency of 25%. But manufacturability at low cost is a concern for the complex IBC-HJ device structure. In this research program, our goals were to addressed the broad industry need for a high-efficiency c-Si cell that overcomes the dominant module cost barriers by 1) developing thin Si wafers synthesized by innovative, kerfless techniques; 2) integrating laser-based processing into most aspects of solar cell fabrication, ensuring high speed and low thermal budgets ; 3) developing an all back contact cell structure compatible with thin wafers using a simplified, low-temperature fabrication process; and 4) designing the contact patterning to enable simplified module assembly. There were a number of significant achievements from this 3 year program. Regarding the front surface, we developed and applied new method to characterize critical interface recombination parameters including interface defect density Dit and hole and electron capture cross-section for use as input for 2D simulation of the IBC cell to guide design and loss analysis. We optimized the antireflection and passivation properties of the front surface texture and a-Si/a-SiN/a-SiC stack depositions to obtain a very low (< 6 mA/cm2) front surface optical losses (reflection and absorption) while maintaining excellent surface passivation (SRV<5 cm/s). We worked with kerfless wafer manufacturers to apply defect-engineering techniques to improve bulk minority-carrier lifetime of thin kerfless wafers by both reducing initial impurities during growth and developing post-growth gettering techniques. This led insights about the kinetics of nickel, chromium, and dislocations in PV-grade silicon and to

  8. Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor–insulator–semiconductor heterojunction solar cell

    SciTech Connect (OSTI)

    Talkenberg, Florian Illhardt, Stefan; Schmidl, Gabriele; Schleusener, Alexander; Sivakov, Vladimir; Radnóczi, György Zoltán; Pécz, Béla; Dikhanbayev, Kadyrjan; Mussabek, Gauhar; Gudovskikh, Alexander

    2015-07-15

    Semiconductor–insulator–semiconductor heterojunction solar cells were prepared using atomic layer deposition (ALD) technique. The silicon surface was treated with oxygen and hydrogen plasma in different orders before dielectric layer deposition. A plasma-enhanced ALD process was applied to deposit dielectric Al{sub 2}O{sub 3} on the plasma pretreated n-type Si(100) substrate. Aluminum doped zinc oxide (Al:ZnO or AZO) was deposited by thermal ALD and serves as transparent conductive oxide. Based on transmission electron microscopy studies the presence of thin silicon oxide (SiO{sub x}) layer was detected at the Si/Al{sub 2}O{sub 3} interface. The SiO{sub x} formation depends on the initial growth behavior of Al{sub 2}O{sub 3} and has significant influence on solar cell parameters. The authors demonstrate that a hydrogen plasma pretreatment and a precursor dose step repetition of a single precursor improve the initial growth behavior of Al{sub 2}O{sub 3} and avoid the SiO{sub x} generation. Furthermore, it improves the solar cell performance, which indicates a change of the Si/Al{sub 2}O{sub 3} interface states.

  9. Impact of Improved Solar Forecasts on Bulk Power System Operations in ISO-NE (Presentation)

    SciTech Connect (OSTI)

    Brancucci Martinez-Anido, C.; Florita, A.; Hodge, B.M.

    2014-11-01

    The diurnal nature of solar power is made uncertain by variable cloud cover and the influence of atmospheric conditions on irradiance scattering processes. Its forecasting has become increasingly important to the unit commitment and dispatch process for efficient scheduling of generators in power system operations. This presentation is an overview of a study that examines the value of improved solar forecasts on Bulk Power System Operations.

  10. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    SciTech Connect (OSTI)

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-14

    With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide being shown to surpass amorphous silicon for temperatures above 300C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.

  11. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    SciTech Connect (OSTI)

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-14

    With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.

  12. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-14

    With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

  13. A way for studying the impact of PEDOT:PSS interface layer on carrier transport in PCDTBT:PC{sub 71}BM bulk hetero junction solar cells by electric field induced optical second harmonic generation measurement

    SciTech Connect (OSTI)

    Ahmad, Zubair Abdullah, Shahino Mah; Sulaiman, Khaulah; Taguchi, Dai; Iwamoto, Mitsumasa

    2015-04-28

    Electric-field-induced optical second-harmonic generation (EFISHG) measurement was employed to study the impact of poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate (PEDOT:PSS) interface layer on the carrier transport mechanism of the PCDTBT:PC{sub 71}BM bulk heterojunction (BHJ) organic solar cells (OSCs). We revealed that the electric fields in the PCDTBT and PC{sub 71}BM were allowed to be measured individually by choosing fundamental laser wavelengths of 1000 nm and 1060 nm, respectively, in dark and under illumination. The results showed that the direction of the internal electric fields in the PCDTBT:PC{sub 71}BM BHJ layer is reversed by introducing the PEDOT:PSS layer, and this results in longer electron transport time in the BHJ layer. We conclude that TR-EFISHG can be used as a novel way for studying the impact of interfacial layer on the transport of electrons and holes in the bulk-heterojunction OSCs.

  14. Enhanced optoelectronic quality of perovskite thin films with hypophosphorous acid for planar heterojunction solar cells

    SciTech Connect (OSTI)

    Zhang, Wei; Pathak, Sandeep; Sakai, Nobuya; Stergiopoulos, Thomas; Nayak, Pabitra K.; Noel, Nakita K.; Haghighirad, Amir A.; Burlakov, Victor M.; deQuilettes, Dane W.; Sadhanala, Aditya; Li, Wenzhe; Wang, Liduo; Ginger, David S.; Friend, Richard H.; Snaith, Henry J.

    2015-11-30

    Solution-processed metal halide perovskite semiconductors, such as CH3NH3PbI3, have exhibited remarkable performance in solar cells, despite having non-negligible density of defect states. A likely candidate is halide vacancies within the perovskite crystals, or the presence of metallic lead, both generated due to the imbalanced I/Pb stoichiometry which could evolve during crystallization. Herein, we show that the addition of hypophosphorous acid (HPA) in the precursor solution can significantly improve the film quality, both electronically and topologically, and enhance the photoluminescence intensity, which leads to more efficient and reproducible photovoltaic devices. We demonstrate that the HPA can reduce the oxidized I2 back into I-, and our results indicate that this facilitates an improved stoichiometry in the perovskite crystal and a reduced density of metallic lead.

  15. Electrodeposited copper front metallization for silicon heterojunction solar cells: materials and processes

    SciTech Connect (OSTI)

    Geissbühler, J.; Martin de Nicolas, S.; Faes, A.; Lachowicz, A.; Tomasi, A.; Paviet-Salomon, B.; Lachenal, D.; Papet, P.; Badel, N.; Barraud, L.; Descoeudres, A.; Despeisse, M.; De Wolf, S.; Ballif, C.

    2014-10-20

    Even though screen-printing of low-temperature silver paste remains the state-of-the-art technique for the front-metallization of SHJ solar cells, recent studies have demonstrated large efficiency improvements when copper-electroplated contacts are used instead of screen-printed ones. However, due to the new materials and the new processes introduced by this technique, it is crucial to individually investigate their compatibility with the SHJ cell structure. In this study, we present a detailed analysis of how the performances of SHJ devices may be modified by these new materials and processes. First, effects on the amorphous silicon (a-Si:H) passivation have been studied for various processes such as DI water rinsing, dips in a copper removal solution and direct evaporation of copper on the a-Si:H. Finally, copper electroplating technique has been adapted in order to be applied to more complex cell structures such as high-efficiency IBC-SHJ.

  16. Enhanced optoelectronic quality of perovskite thin films with hypophosphorous acid for planar heterojunction solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhang, Wei; Pathak, Sandeep; Sakai, Nobuya; Stergiopoulos, Thomas; Nayak, Pabitra K.; Noel, Nakita K.; Haghighirad, Amir A.; Burlakov, Victor M.; deQuilettes, Dane W.; Sadhanala, Aditya; et al

    2015-11-30

    Solution-processed metal halide perovskite semiconductors, such as CH3NH3PbI3, have exhibited remarkable performance in solar cells, despite having non-negligible density of defect states. A likely candidate is halide vacancies within the perovskite crystals, or the presence of metallic lead, both generated due to the imbalanced I/Pb stoichiometry which could evolve during crystallization. Herein, we show that the addition of hypophosphorous acid (HPA) in the precursor solution can significantly improve the film quality, both electronically and topologically, and enhance the photoluminescence intensity, which leads to more efficient and reproducible photovoltaic devices. We demonstrate that the HPA can reduce the oxidized I2 backmore » into I-, and our results indicate that this facilitates an improved stoichiometry in the perovskite crystal and a reduced density of metallic lead.« less

  17. Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI.sub.2 chalcopyrite compounds

    DOE Patents [OSTI]

    Mickelsen, Reid A.; Chen, Wen S.

    1983-01-01

    Apparatus for forming thin-film, large area solar cells having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n-type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in the first semiconductor layer to evolve into p-type material, thereby defining a thin layer heterojunction device characterized by the absence of voids, vacancies and nodules which tend to reduce the energy conversion efficiency of the system.

  18. An easy-to-fabricate low-temperature TiO{sub 2} electron collection layer for high efficiency planar heterojunction perovskite solar cells

    SciTech Connect (OSTI)

    Conings, B.; Baeten, L.; Jacobs, T.; Dera, R.; D’Haen, J.; Manca, J.; Boyen, H.-G.

    2014-08-01

    Organometal trihalide perovskite solar cells arguably represent the most auspicious new photovoltaic technology so far, as they possess an astonishing combination of properties. The impressive and brisk advances achieved so far bring forth highly efficient and solution processable solar cells, holding great promise to grow into a mature technology that is ready to be embedded on a large scale. However, the vast majority of state-of-the-art perovskite solar cells contains a dense TiO{sub 2} electron collection layer that requires a high temperature treatment (>450 °C), which obstructs the road towards roll-to-roll processing on flexible foils that can withstand no more than ∼150 °C. Furthermore, this high temperature treatment leads to an overall increased energy payback time and cumulative energy demand for this emerging photovoltaic technology. Here we present the implementation of an alternative TiO{sub 2} layer formed from an easily prepared nanoparticle dispersion, with annealing needs well within reach of roll-to-roll processing, making this technology also appealing from the energy payback aspect. Chemical and morphological analysis allows to understand and optimize the processing conditions of the TiO{sub 2} layer, finally resulting in a maximum obtained efficiency of 13.6% for a planar heterojunction solar cell within an ITO/TiO{sub 2}/CH{sub 3}NH{sub 3}PbI{sub 3-x}Cl{sub x}poly(3-hexylthiophene)/Ag architecture.

  19. Peculiarity of two thermodynamically-stable morphologies and their impact on the efficiency of small molecule bulk heterojunction solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Herath, Nuradhika; Das, Sanjib; Keum, Jong K.; Zhu, Jiahua; Kumar, Rajeev; Ivanov, Ilia N.; Sumpter, Bobby G.; Browning, James F.; Xiao, Kai; Gu, Gong; et al

    2015-08-28

    Structural characteristics of the active layers in organic photovoltaic (OPV) devices play a critical role in charge generation, separation and transport. Here we report on morphology and structural control of p-DTS(FBTTh2)2:PC71BM films by means of thermal annealing and 1,8-diiodooctane (DIO) solvent additive processing, and correlate it to the device performance. By combining surface imaging with nanoscale depth-sensitive neutron reflectometry (NR) and X-ray diffraction, three-dimensional morphologies of the films are reconstituted with information extending length scales from nanometers to microns. DIO promotes the formation of a well-mixed donor-acceptor vertical phase morphology with a large population of small p-DTS(FBTTh2)2 nanocrystals arranged inmore » an elongated domain network of the film, thereby enhancing the device performance. In contrast, films without DIO exhibit three-sublayer vertical phase morphology with phase separation in agglomerated domains. Our findings are supported by thermodynamic description based on the Flory-Huggins theory with quantitative evaluation of pairwise interaction parameters that explain the morphological changes resulting from thermal and solvent treatments. Our study reveals that vertical phase morphology of small-molecule based OPVs is significantly different from polymer-based systems. Lastly, the significant enhancement of morphology and information obtained from theoretical modeling may aid in developing an optimized morphology to enhance device performance for OPVs.« less

  20. Peculiarity of two thermodynamically-stable morphologies and their impact on the efficiency of small molecule bulk heterojunction solar cells

    SciTech Connect (OSTI)

    Herath, Nuradhika; Das, Sanjib; Keum, Jong K.; Zhu, Jiahua; Kumar, Rajeev; Ivanov, Ilia N.; Sumpter, Bobby G.; Browning, James F.; Xiao, Kai; Gu, Gong; Joshi, Pooran; Smith, Sean; Lauter, Valeria

    2015-08-28

    Structural characteristics of the active layers in organic photovoltaic (OPV) devices play a critical role in charge generation, separation and transport. Here we report on morphology and structural control of p-DTS(FBTTh2)2:PC71BM films by means of thermal annealing and 1,8-diiodooctane (DIO) solvent additive processing, and correlate it to the device performance. By combining surface imaging with nanoscale depth-sensitive neutron reflectometry (NR) and X-ray diffraction, three-dimensional morphologies of the films are reconstituted with information extending length scales from nanometers to microns. DIO promotes the formation of a well-mixed donor-acceptor vertical phase morphology with a large population of small p-DTS(FBTTh2)2 nanocrystals arranged in an elongated domain network of the film, thereby enhancing the device performance. In contrast, films without DIO exhibit three-sublayer vertical phase morphology with phase separation in agglomerated domains. Our findings are supported by thermodynamic description based on the Flory-Huggins theory with quantitative evaluation of pairwise interaction parameters that explain the morphological changes resulting from thermal and solvent treatments. Our study reveals that vertical phase morphology of small-molecule based OPVs is significantly different from polymer-based systems. Lastly, the significant enhancement of morphology and information obtained from theoretical modeling may aid in developing an optimized morphology to enhance device performance for OPVs.

  1. Demonstration of solar-blind Al{sub x}Ga{sub 1−x}N-based heterojunction phototransistors

    SciTech Connect (OSTI)

    Zhang, Lingxia; Tang, Shaoji; Liu, Changshan; Li, Bin; Wu, Hualong; Wang, Hailong; Wu, Zhisheng; Jiang, Hao

    2015-12-07

    Al{sub 0.4}Ga{sub 0.6}N/Al{sub 0.65}Ga{sub 0.35}N heterojunction phototransistors have been fabricated from the epi-structure grown by low-pressure metal organic chemical vapor deposition on c-plane sapphire substrates. P-type conductivity of the AlGaN base layer was realized by using indium surfactant-assisted Mg-delta doping method. Regrowth technique was used to suppress the Mg memory effect on the n-type emitter. The fabricated devices with a 150-μm-diameter active area exhibited a bandpass spectral response between 235 and 285 nm. Dark current was measured to be less than 10 pA for bias voltages below 2.0 V. A high optical gain of 1.9 × 10{sup 3} was obtained at 6 V bias.

  2. Evidence for near-Surface NiOOH Species in Solution-Processed NiOx Selective Interlayer Materials: Impact on Energetics and the Performance of Polymer Bulk Heterojunction Photovoltaics

    SciTech Connect (OSTI)

    Ratcliff, Erin L.; Meyer, Jens; Steirer, K. Xerxes; Garcia, Andres; Berry, Joseph J.; Ginley, David S.; Olson, Dana C.; Kahn, Antoine; Armstrong, Neal R.

    2011-11-22

    The characterization and implementation of solution-processed, wide bandgap nickel oxide (NiO{sub x}) hole-selective interlayer materials used in bulk-heterojunction (BHJ) organic photovoltaics (OPVs) are discussed. The surface electrical properties and charge selectivity of these thin films are strongly dependent upon the surface chemistry, band edge energies, and midgap state concentrations, as dictated by the ambient conditions and film pretreatments. Surface states were correlated with standards for nickel oxide, hydroxide, and oxyhydroxide components, as determined using monochromatic X-ray photoelectron spectroscopy. Ultraviolet and inverse photoemission spectroscopy measurements show changes in the surface chemistries directly impact the valence band energies. O?-plasma treatment of the as-deposited NiO{sub x} films was found to introduce the dipolar surface species nickel oxyhydroxide (NiOOH), rather than the p-dopant Ni?O?, resulting in an increase of the electrical band gap energy for the near-surface region from 3.1 to 3.6 eV via a vacuum level shift. Electron blocking properties of the as-deposited and O?-plasma treated NiO{sub x} films are compared using both electron-only and BHJ devices. O?-plasma-treated NiO{sub x} interlayers produce electron-only devices with lower leakage current and increased turn on voltages. The differences in behavior of the different pretreated interlayers appears to arise from differences in local density of states that comprise the valence band of the NiO{sub x} interlayers and changes to the band gap energy, which influence their hole-selectivity. The presence of NiOOH states in these NiO{sub x} films and the resultant chemical reactions at the oxide/organic interfaces in OPVs is predicted to play a significant role in controlling OPV device efficiency and lifetime.

  3. Comparing Multiple Exciton Generation in Quantum Dots To Impact Ionization in Bulk Semiconductors: Implications for Enhancement of Solar Energy Conversion

    SciTech Connect (OSTI)

    Beard, Matthew C.; Midgett, Aaron G.; Hanna, Mark C.; Luther, Joseph M.; Hughes, Barbara K.; Nozik, Arthur J.

    2010-07-26

    Multiple exciton generation (MEG) in quantum dots (QDs) and impact ionization (II) in bulk semiconductors are processes that describe producing more than one electron-hole pair per absorbed photon. We derive expressions for the proper way to compare MEG in QDs with II in bulk semiconductors and argue that there are important differences in the photophysics between bulk semiconductors and QDs. Our analysis demonstrates that the fundamental unit of energy required to produce each electron-hole pair in a given QD is the band gap energy. We find that the efficiency of the multiplication process increases by at least 2 in PbSe QDs compared to bulk PbSe, while the competition between cooling and multiplication favors multiplication by a factor of 3 in QDs. We also demonstrate that power conversion efficiencies in QD solar cells exhibiting MEG can greatly exceed conversion efficiencies of their bulk counterparts, especially if the MEG threshold energy can be reduced toward twice the QD band gap energy, which requires a further increase in the MEG efficiency. Finally, we discuss the research challenges associated with achieving the maximum benefit of MEG in solar energy conversion since we show the threshold and efficiency are mathematically related.

  4. The Impact of Improved Solar Forecasts on Bulk Power System Operations...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    120 140 Generation (TWh) Imports Nuclear Coal Gas Oil Biomass Hydro Pumped H. Wind Solar ... Costs + Start-Up and Shutdown Costs + Import Costs - Export Revenues 8 Solar Power ...

  5. Impact of Improved Solar Forecasts on Bulk Power System Operations in ISO-NE: Preprint

    SciTech Connect (OSTI)

    Brancucci Martinez-Anido, C.; Florita, A.; Hodge, B. M.

    2014-09-01

    The diurnal nature of solar power is made uncertain by variable cloud cover and the influence of atmospheric conditions on irradiance scattering processes. Its forecasting has become increasingly important to the unit commitment and dispatch process for efficient scheduling of generators in power system operations. This study examines the value of improved solar power forecasting for the Independent System Operator-New England system. The results show how 25% solar power penetration reduces net electricity generation costs by 22.9%.

  6. Adhesion in flexible organic and hybrid organic/inorganic light emitting device and solar cells

    SciTech Connect (OSTI)

    Yu, D.; Kwabi, D.; Akogwu, O.; Du, J.; Oyewole, O. K.; Tong, T.; Anye, V. C.; Rwenyagila, E.; Asare, J.; Fashina, A.; Soboyejo, W. O.

    2014-08-21

    This paper presents the results of an experimental study of the adhesion between bi-material pairs that are relevant to organic light emitting devices, hybrid organic/inorganic light emitting devices, organic bulk heterojunction solar cells, and hybrid organic/inorganic solar cells on flexible substrates. Adhesion between the possible bi-material pairs is measured using force microscopy (AFM) techniques. These include: interfaces that are relevant to organic light emitting devices, hybrid organic/inorganic light emitting devices, bulk heterojunction solar cells, and hybrid combinations of titanium dioxide (TiO{sub 2}) and poly(3-hexylthiophene). The results of AFM measurements are incorporated into the Derjaguin-Muller-Toporov model for the determination of adhesion energies. The implications of the results are then discussed for the design of robust organic and hybrid organic/inorganic electronic devices.

  7. High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy

    SciTech Connect (OSTI)

    Lang, J. R.; Neufeld, C. J.; Hurni, C. A.; Cruz, S. C.; Matioli, E.; Mishra, U. K.; Speck, J. S.

    2011-04-01

    High external quantum efficiency (EQE) p-i-n heterojunction solar cellsgrown by NH3 -based molecular beam epitaxy are presented. EQE values including optical losses are greater than 50% with fill-factors over 72% when illuminated with a 1 sun AM0 spectrum. Optical absorptionmeasurements in conjunction with EQE measurements indicate an internal quantum efficiency greater than 90% for the InGaN absorbing layer. By adjusting the thickness of the top p-type GaN window contact layer, it is shown that the short-wavelength (<365 nm) quantum efficiency is limited by the minority carrier diffusion length in highly Mg-doped p-GaN.

  8. Markets to Facilitate Wind and Solar Energy Integration in the Bulk Power Supply: An IEA Task 25 Collaboration; Preprint

    SciTech Connect (OSTI)

    Milligan, M.; Holttinen, H.; Soder, L.; Clark, C.; Pineda, I.

    2012-09-01

    Wind and solar power will give rise to challenges in electricity markets regarding flexibility, capacity adequacy, and the participation of wind and solar generators to markets. Large amounts of wind power will have impacts on bulk power system markets and electricity prices. If the markets respond to increased wind power by increasing investments in low-capital, high-cost or marginal-cost power, the average price may remain in the same range. However, experiences so far from Denmark, Germany, Spain, and Ireland are such that the average market prices have decreased because of wind power. This reduction may result in additional revenue insufficiency, which may be corrected with a capacity market, yet capacity markets are difficult to design. However, the flexibility attributes of the capacity also need to be considered. Markets facilitating wind and solar integration will include possibilities for trading close to delivery (either by shorter gate closure times or intraday markets). Time steps chosen for markets can enable more flexibility to be assessed. Experience from 5- and 10-minute markets has been encouraging.

  9. Nanocrystalline heterojunction materials

    DOE Patents [OSTI]

    Elder, Scott H.; Su, Yali; Gao, Yufei; Heald, Steve M.

    2003-07-15

    Mesoporous nanocrystalline titanium dioxide heterojunction materials are disclosed. In one disclosed embodiment, materials comprising a core of titanium dioxide and a shell of a molybdenum oxide exhibit a decrease in their photoadsorption energy as the size of the titanium dioxide core decreases.

  10. Nanocrystalline Heterojunction Materials

    DOE Patents [OSTI]

    Elder, Scott H. (Portland, OR); Su, Yali (Richland, WA); Gao, Yufei (Blue Bell, PA); Heald, Steve M. (Downers Grove, IL)

    2004-02-03

    Mesoporous nanocrystalline titanium dioxide heterojunction materials and methods of making the same are disclosed. In one disclosed embodiment, materials comprising a core of titanium dioxide and a shell of a molybdenum oxide exhibit a decrease in their photoadsorption energy as the size of the titanium dioxide core decreases.

  11. Copper oxide/N-silicon heterojunction photovoltaic device

    DOE Patents [OSTI]

    Feng, Tom; Ghosh, Amal K.

    1982-01-01

    A photovoltaic device having characteristics of a high efficiency solar cell comprising a Cu.sub.x O/n-Si heterojunction. The Cu.sub.x O layer is formed by heating a deposited copper layer in an oxygen containing ambient.

  12. Origin and elimination of photocurrent hysteresis by fullerene passivation in CH3NH3PbI3 planar heterojunction solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shao, Yuchuan; Xiao, Zhengguo; Bi, Cheng; Yuan, Yongbo; Huang, Jinsong

    2014-12-15

    The large photocurrent hysteresis observed in many organometal trihalide perovskite solar cells has become a major hindrance impairing the ultimate performance and stability of these devices, while its origin was unknown. Here we demonstrate the trap states on the surface and grain boundaries of the perovskite materials to be the origin of photocurrent hysteresis and that the fullerene layers deposited on perovskites can effectively passivate these charge trap states and eliminate the notorious photocurrent hysteresis. Fullerenes deposited on the top of the perovskites reduce the trap density by two orders of magnitude and double the power conversion efficiency of CH3NH3PbI3more » solar cells. As a result, the elucidation of the origin of photocurrent hysteresis and its elimination by trap passivation in perovskite solar cells provides important directions for future enhancements to device efficiency.« less

  13. Ultra-violet absorption induced modifications in bulk and nanoscale electrical transport properties of Al-doped ZnO thin films

    SciTech Connect (OSTI)

    Kumar, Mohit; Basu, Tanmoy; Som, Tapobrata

    2015-08-07

    Using conductive atomic force microscopy and Kelvin probe force microscopy, we study local electrical transport properties in aluminum-doped zinc oxide (ZnO:Al or AZO) thin films. Current mapping shows a spatial variation in conductivity which corroborates well with the local mapping of donor concentration (∼10{sup 20 }cm{sup −3}). In addition, a strong enhancement in the local current at grains is observed after exposing the film to ultra-violet (UV) light which is attributed to persistent photocurrent. Further, it is shown that UV absorption gives a smooth conduction in AZO film which in turn gives rise to an improvement in the bulk photoresponsivity of an n-AZO/p-Si heterojunction diode. This finding is in contrast to the belief that UV absorption in an AZO layer leads to an optical loss for the underneath absorbing layer of a heterojunction solar cell.

  14. 15.01.16 RH Perovskite Solar Cells - JCAP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Fabrication of High Efficiency Perovskite Solar Cells Li, Y., Cooper, J. K., Buonsanti, R., Giannini, G., Liu, Y., Toma, F. M. & Sharp, I. D. Fabrication of Planar Heterojunction ...

  15. Integrating Wind and Solar Energy in the U.S. Bulk Power System: Lessons from Regional Integration Studies

    SciTech Connect (OSTI)

    Bird, L.; Lew, D.

    2012-09-01

    Two recent studies sponsored by the U.S. Department of Energy (DOE) and the National Renewable Energy Laboratory (NREL) have examined the impacts of integrating high penetrations of wind and solar energy on the Eastern and Western electric grids. The Eastern Wind Integration and Transmission Study (EWITS), initiated in 2007, examined the impact on power system operations of reaching 20% to 30% wind energy penetration in the Eastern Interconnection. The Western Wind and Solar Integration Study (WWSIS) examined the operational implications of adding up to 35% wind and solar energy penetration to the Western Interconnect. Both studies examined the costs of integrating variable renewable energy generation into the grid and transmission and operational changes that might be necessary to address higher penetrations of wind or solar generation. This paper identifies key insights from these regional studies for integrating high penetrations of renewables in the U.S. electric grid. The studies share a number of key findings, although in some instances the results vary due to differences in grid operations and markets, the geographic location of the renewables, and the need for transmission.

  16. Bulk- and layer-heterojunction phototransistors based on poly...

    Office of Scientific and Technical Information (OSTI)

    of magnitude higher than that of BH-FEpTs (10sup -1AW) under the same conditions. ... (Tianjin University), Ministry of Education, Tianjin 300072 (China) Tianjin Key ...

  17. The influence of molecular orientation on organic bulk heterojunction...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    preferential orientation of polymer chains with respect to the fullerene domain leads to a high photovoltaic performance. Featured on the cover of Nature Photonics 8. Article link

  18. RAPID/BulkTransmission/Exploration | Open Energy Information

    Open Energy Info (EERE)

    search RAPID Regulatory and Permitting Information Desktop Toolkit BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us RAPID Bulk Transmission ...

  19. Flow-enhanced solution printing of all-polymer solar cells

    SciTech Connect (OSTI)

    Diao, Ying; Zhou, Yan; Kurosawa, Tadanori; Shaw, Leo; Wang, Cheng; Park, Steve; Guo, Yikun; Reinspach, Julia A.; Gu, Kevin; Gu, Xiaodan; Tee, Benjamin C. K.; Pang, Changhyun; Yan, Hongping; Zhao, Dahui; Toney, Michael F.; Mannsfeld, Stefan C. B.; Bao, Zhenan

    2015-08-12

    Morphology control of solution coated solar cell materials presents a key challenge limiting their device performance and commercial viability. Here we present a new concept for controlling phase separation during solution printing using an all-polymer bulk heterojunction solar cell as a model system. The key aspect of our method lies in the design of fluid flow using a microstructured printing blade, on the basis of the hypothesis of flow-induced polymer crystallization. Our flow design resulted in a similar to 90% increase in the donor thin film crystallinity and reduced microphase separated donor and acceptor domain sizes. The improved morphology enhanced all metrics of solar cell device performance across various printing conditions, specifically leading to higher short-circuit current, fill factor, open circuit voltage and significantly reduced device-to-device variation. However, we expect our design concept to have broad applications beyond all-polymer solar cells because of its simplicity and versatility.

  20. Tellurium-Containing Conjugated Materials for Solar Cells: From Sulfur to Tellurium

    SciTech Connect (OSTI)

    Park Y. S.; Kale, T.; Wu, Q.; Ocko, B.M.; Black, C.T., Grubbs, R.B.

    2013-04-03

    A series of diketopyrrolopyrrole(DPP)-based small molecules have been synthesized by palladium-catalyzed coupling reactions. Electron-donating moieties (benzothiophene, benzoselenophene, and benzotellurophene) are bridged by an electron-withdrawing DPP unit to generate donor-acceptor-donor (D-A-D) type molecules. We observe red-shifts in absorption spectra of these compounds by varying heteroatoms from sulfur to tellurium. In bulk heterojunction solar cells with [6,6]phenyl-C61-butyric acid methyl ester (PC61BM) as acceptor, we obtain power conversion efficiencies of 2.4% (benzothiophene), 4.1% (benzoselenophene), and 3.0% (benzotellurophene), respectively.

  1. Interface engineering for efficient fullerene-free organic solar cells

    SciTech Connect (OSTI)

    Shivanna, Ravichandran; Narayan, K. S. E-mail: narayan@jncasr.ac.in; Rajaram, Sridhar E-mail: narayan@jncasr.ac.in

    2015-03-23

    We demonstrate the role of zinc oxide (ZnO) morphology and addition of an acceptor interlayer to achieve high efficiency fullerene-free bulk heterojunction inverted organic solar cells. Nanopatterning of the ZnO buffer layer enhances the effective light absorption in the active layer, and the insertion of a twisted perylene acceptor layer planarizes and decreases the electron extraction barrier. Along with an increase in current homogeneity, the reduced work function difference and selective transport of electrons prevent the accumulation of charges and decrease the electron-hole recombination at the interface. These factors enable an overall increase of efficiency to 4.6%, which is significant for a fullerene-free solution-processed organic solar cell.

  2. Current and lattice matched tandem solar cell

    DOE Patents [OSTI]

    Olson, Jerry M.

    1987-01-01

    A multijunction (cascade) tandem photovoltaic solar cell device is fabricated of a Ga.sub.x In.sub.1-x P (0.505.ltoreq.X.ltoreq.0.515) top cell semiconductor lattice matched to a GaAs bottom cell semiconductor at a low-resistance heterojunction, preferably a p+/n+ heterojunction between the cells. The top and bottom cells are both lattice matched and current matched for high efficiency solar radiation conversion to electrical energy.

  3. Photovoltaic properties and morphology of organic solar cells based on liquid-crystal semiconducting polymer with additive

    SciTech Connect (OSTI)

    Suzuki, Atsushi; Zushi, Masahito; Suzuki, Hisato; Ogahara, Shinichi; Akiyama, Tsuyoshi; Oku, Takeo

    2014-02-20

    Bulk heterojunction organic solar cell based on liquid crystal semiconducting polymers of poly[9,9-dioctylfluorene-co-bithiophene] (F8T2) as p-type semiconductors and fullerenes (C{sub 60}) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) as electron donor and acceptor has been fabricated and characterized for improving photovoltaic and optical properties. The photovoltaic performance including current voltage curves in the dark and illumination of the F8T2/C{sub 60} conventional and inverted bulk heterojunction solar cells were investigated. Relationship between the photovoltaic properties and morphological behavior was focused on tuning for optimization of photo-voltaic performance under annealing condition near glass transition temperature. Additive-effect of diiodooctane (DIO) and poly(3-hexylthiophene-2,5-diyl) (P3HT) on the photovoltaic performance and optical properties was investigated. Mechanism of the photovoltaic properties of the conventional and inverted solar cells will be discussed by the experimental results.

  4. Panchromatic polymer-polymer ternary solar cells enhanced by Forster resonance energy transfer and solvent vapor annealing

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Goh, Tenghooi; Sfeir, Matthew Y.; Huang, Jing -Shun; Bartolome, Benjamin; Vaisman, Michelle; Lee, Minjoo L.; Taylor, Andre D.

    2015-08-04

    Thanks to the bulk-heterojunction (BHJ) feature of polymer solar cells (PSC), additional light active components can be added with ease to form ternary solar cells. This strategy has achieved great success largely due to expanded spectral response range and improved power conversion efficiency (PCE) without incurring excessive processing costs. Here, we report ternary blend polymer–polymer solar cells comprised of PTB7, P3HT, and PC71BM with PCE as high as 8.2%. Analyses of femtosecond time resolved photoluminescence and transient absorption spectroscopy data confirm that P3HT is effective in transferring energy non-radiatively by inducing excitons and prolonging their overall lifetime in PTB7. Asmore » a result, solvent vapor annealing (SVA) treatment was employed to rectify the overly-coarse morphology, thus enhancing the fill factor, reducing interfacial recombination, and boosting the PCE to 8.7%.« less

  5. Panchromatic polymer-polymer ternary solar cells enhanced by Forster resonance energy transfer and solvent vapor annealing

    SciTech Connect (OSTI)

    Goh, Tenghooi; Sfeir, Matthew Y.; Huang, Jing -Shun; Bartolome, Benjamin; Vaisman, Michelle; Lee, Minjoo L.; Taylor, Andre D.

    2015-08-04

    Thanks to the bulk-heterojunction (BHJ) feature of polymer solar cells (PSC), additional light active components can be added with ease to form ternary solar cells. This strategy has achieved great success largely due to expanded spectral response range and improved power conversion efficiency (PCE) without incurring excessive processing costs. Here, we report ternary blend polymer–polymer solar cells comprised of PTB7, P3HT, and PC71BM with PCE as high as 8.2%. Analyses of femtosecond time resolved photoluminescence and transient absorption spectroscopy data confirm that P3HT is effective in transferring energy non-radiatively by inducing excitons and prolonging their overall lifetime in PTB7. As a result, solvent vapor annealing (SVA) treatment was employed to rectify the overly-coarse morphology, thus enhancing the fill factor, reducing interfacial recombination, and boosting the PCE to 8.7%.

  6. Panchromatic polymer-polymer ternary solar cells enhanced by Forster resonance energy transfer and solvent vapor annealing

    SciTech Connect (OSTI)

    Goh, Tenghooi; Sfeir, Matthew Y.; Huang, Jing -Shun; Bartolome, Benjamin; Vaisman, Michelle; Lee, Minjoo L.; Taylor, Andre D.

    2015-08-04

    Thanks to the bulk-heterojunction (BHJ) feature of polymer solar cells (PSC), additional light active components can be added with ease to form ternary solar cells. This strategy has achieved great success largely due to expanded spectral response range and improved power conversion efficiency (PCE) without incurring excessive processing costs. Here, we report ternary blend polymerpolymer solar cells comprised of PTB7, P3HT, and PC71BM with PCE as high as 8.2%. Analyses of femtosecond time resolved photoluminescence and transient absorption spectroscopy data confirm that P3HT is effective in transferring energy non-radiatively by inducing excitons and prolonging their overall lifetime in PTB7. As a result, solvent vapor annealing (SVA) treatment was employed to rectify the overly-coarse morphology, thus enhancing the fill factor, reducing interfacial recombination, and boosting the PCE to 8.7%.

  7. Transparent conductor-Si pillars heterojunction photodetector

    SciTech Connect (OSTI)

    Yun, Ju-Hyung; Kim, Joondong; Park, Yun Chang

    2014-08-14

    We report a high-performing heterojunction photodetector by enhanced surface effects. Periodically, patterned Si substrates were used to enlarge the photo-reactive regions and yield proportionally improved photo-responses. An optically transparent indium-tin-oxide (ITO) was deposited on a Si substrate and spontaneously formed an ITO/Si heterojunction. Due to an electrical conductive ITO film, ITO/Si heterojunction device can be operated at zero-bias, which effectively suppresses the dark current, resulting in better performances than those by a positive or a negative bias operation. This zero-bias operating heterojunction device exhibits a short response time (? 22.5?ms) due to the physical reaction to the incident light. We revealed that the location of the space charge region (SCR) is crucial for a specific photon-wavelength response. The SCR space has the highest collection efficiency of the photo-generated carriers. The photo-response can be maximized when we design the photodetector by superposing the SCR space over a corresponding photon-absorption length. The surface enhanced Si pillar devices significantly improved the photo-responses ratios from that of a planar Si device. According to this design scheme, a high photo-response ratio of 5560% was achieved at a wavelength of 600?nm. This surfaced-enhanced heterojunction design scheme would be a promising approach for various photoelectric applications.

  8. Development and characterization of PCDTBT:CdSe QDs hybrid solar cell

    SciTech Connect (OSTI)

    Dixit, Shiv Kumar Bhatnagar, Chhavi Kumari, Anita Madhwal, Devinder Bhatnagar, P. K. Mathur, P. C.

    2014-10-15

    Solar cell consisting of low band gap polymer poly[N-900-hepta-decanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10, 30-benzothiadiazole)] (PCDTBT) as donor and cadmium selenide/zinc sulphide (CdSe/ZnS) core shell quantum dots (QDs) as an acceptor has been developed. The absorption measurements show that the absorption coefficient increases in bulk heterojunction (BHJ) structure covering broad absorption spectrum (200nm–700nm). Also, the photoluminescence (PL) of the PCDTBT:QDs film is found to decrease by an order of magnitude showing a significant transfer of electrons to the QDs. With this approach and under broadband white light with an irradiance of 8.19 mW/cm{sup 2}, we have been able to achieve a power conversion efficiency (PCE) of 3.1 % with fill factor 0.42 for our typical solar cell.

  9. 08.30.16 Stable Planar Solar Cells - JCAP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Defective TiO2 with high photoconductive gain for efficient and stable planar heterojunction perovskite solar cells Li, Y. et al. Defective TiO2 with high photoconductive gain for efficient and stable planar heterojunction perovskite solar cells. Nature Communications, 7, 12446, DOI: 10.1038/ncomms12446 (2016). Defects in TiO2 electron selective contacts to halide perovskite light absorbers are engineered to beneficially reduce photocatalytic degradation and enable a high photoconductive gain.

  10. Origin and elimination of photocurrent hysteresis by fullerene passivation in CH3NH3PbI3 planar heterojunction solar cells

    SciTech Connect (OSTI)

    Shao, Yuchuan; Xiao, Zhengguo; Bi, Cheng; Yuan, Yongbo; Huang, Jinsong

    2014-12-15

    The large photocurrent hysteresis observed in many organometal trihalide perovskite solar cells has become a major hindrance impairing the ultimate performance and stability of these devices, while its origin was unknown. Here we demonstrate the trap states on the surface and grain boundaries of the perovskite materials to be the origin of photocurrent hysteresis and that the fullerene layers deposited on perovskites can effectively passivate these charge trap states and eliminate the notorious photocurrent hysteresis. Fullerenes deposited on the top of the perovskites reduce the trap density by two orders of magnitude and double the power conversion efficiency of CH3NH3PbI3 solar cells. As a result, the elucidation of the origin of photocurrent hysteresis and its elimination by trap passivation in perovskite solar cells provides important directions for future enhancements to device efficiency.

  11. Electrodeposited cobalt sulfide hole collecting layer for polymer solar cells

    SciTech Connect (OSTI)

    Zampetti, Andrea; De Rossi, Francesca; Brunetti, Francesca; Reale, Andrea; Di Carlo, Aldo; Brown, Thomas M., E-mail: thomas.brown@uniroma2.it [CHOSE (Centre for Hybrid and Organic Solar Energy), Department of Electronic Engineering, University of Rome Tor Vergata, Via del Politecnico 1, 00133 Rome (Italy)

    2014-08-11

    In polymer solar cells based on the blend of regioregular poly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester, the hole collecting layer has to be endowed with its ionization potential close to or greater than that of P3HT (?5?eV). Conductive polymer blends such as poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) and metal oxides such as vanadium pentoxide (V{sub 2}O{sub 5}) and molybdenum trioxide (MoO{sub 3}) satisfy this requirement and have been the most common materials used so far in bulk heterojunction structures. We report here cobalt sulfide (CoS) to be a promising hole collecting material deposited by convenient and room temperature electrodeposition. By simply tuning the CoS electrodeposition parameters, power conversion efficiencies similar (within 15%) to a reference structure with PEDOT:PSS were obtained.

  12. Solar

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas ...

  13. Solar

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water ...

  14. Solar

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & ...

  15. RAPID/BulkTransmission/Federal | Open Energy Information

    Open Energy Info (EERE)

    Permitting Information Desktop Toolkit BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Regulatory Information Overviews Search for other...

  16. Varying cadmium telluride growth temperature during deposition to increase solar cell reliability

    DOE Patents [OSTI]

    Albin, David S.; Johnson, James Neil; Zhao, Yu; Korevaar, Bastiaan Arie

    2016-04-26

    A method for forming thin films or layers of cadmium telluride (CdTe) for use in photovoltaic modules or solar cells. The method includes varying the substrate temperature during the growth of the CdTe layer by preheating a substrate (e.g., a substrate with a cadmium sulfide (CdS) heterojunction or layer) suspended over a CdTe source to remove moisture to a relatively low preheat temperature. Then, the method includes directly heating only the CdTe source, which in turn indirectly heats the substrate upon which the CdTe is deposited. The method improves the resulting CdTe solar cell reliability. The resulting microstructure exhibits a distinct grain size distribution such that the initial region is composed of smaller grains than the bulk region portion of the deposited CdTe. Resulting devices exhibit a behavior suggesting a more n-like CdTe material near the CdS heterojunction than devices grown with substrate temperatures held constant during CdTe deposition.

  17. solar

    National Nuclear Security Administration (NNSA)

    2%2A en Solar power purchase for DOE laboratories http:nnsa.energy.govmediaroompressreleasessolarpower

  18. Constructing Ordered Sensitized Heterojunctions: Bottom-Up Electrochemical Synthesis of p-Type Semiconductors in Oriented n-TiO2 Nanotube Arrays

    SciTech Connect (OSTI)

    Wang, Q.; Zhu, K.; Neale, N. R.; Frank. A. J.

    2009-01-01

    Fabrication of efficient semiconductor-sensitized bulk heterojunction solar cells requires the complete filling of the pore system of one semiconductor (host) material with nanoscale dimensions (<100 nm) with a different semiconductor (guest) material. Because of the small pore size and electrical conductivity of the host material, it is challenging to employ electrochemical approaches to fill the entire pore network. Typically, during the electrochemical deposition process, the guest material blocks the pores of the host, precluding complete pore filling. We describe a general synthetic strategy for spatially controlling the growth of p-type semiconductors in the nanopores of electrically conducting n-type materials. As an illustration of this strategy, we report on the facile electrochemical deposition of p-CuInSe{sub 2} in nanoporous anatase n-TiO{sub 2} oriented nanotube arrays and nanoparticle films. We show that by controlling the ambipolar diffusion length the p-type semiconductors can be deposited from the bottom-up, resulting in complete pore filling.

  19. Large rectification in molecular heterojunctions | Argonne National

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laboratory Large rectification in molecular heterojunctions April 19, 2016 Tweet EmailPrint The outstanding challenge in using molecules in optoelectronics devices is to create electrical functionality through molecular design and to go beyond the use of molecules as mere light absorbers and/or resistive elements. The earliest proposal for such non-linear electrical behavior is the Aviram-Ratner molecular diode model, proposed in 1974. However, more than forty years later, the electrical

  20. Hanford ETR Bulk Vitrification System - Demonstration Bulk Vitrificati...

    Office of Environmental Management (EM)

    Hanford ETR Bulk Vitrification System - Demonstration Bulk Vitrification System (DBVS) Review Report Hanford ETR Bulk Vitrification System - Demonstration Bulk Vitrification System ...

  1. Rotary bulk solids divider

    DOE Patents [OSTI]

    Maronde, Carl P.; Killmeyer, Jr., Richard P.

    1992-01-01

    An apparatus for the disbursement of a bulk solid sample comprising, a gravity hopper having a top open end and a bottom discharge end, a feeder positioned beneath the gravity hopper so as to receive a bulk solid sample flowing from the bottom discharge end, and a conveyor receiving the bulk solid sample from the feeder and rotating on an axis that allows the bulk solid sample to disperse the sample to a collection station.

  2. ROTARY BULK SOLIDS DIVIDER

    DOE Patents [OSTI]

    Maronde, Carl P.; Killmeyer JR., Richard P.

    1992-03-03

    An apparatus for the disbursement of a bulk solid sample comprising, a gravity hopper having a top open end and a bottom discharge end, a feeder positioned beneath the gravity hopper so as to receive a bulk solid sample flowing from the bottom discharge end, and a conveyor receiving the bulk solid sample from the feeder and rotating on an axis that allows the bulk solid sample to disperse the sample to a collection station.

  3. Graphene composite for improvement in the conversion efficiency of flexible poly 3-hexyl-thiophene:[6,6]-phenyl C{sub 71} butyric acid methyl ester polymer solar cells

    SciTech Connect (OSTI)

    Chauhan, A. K., E-mail: akchau@barc.gov.in, E-mail: akc.barc@gmail.com; Gusain, Abhay; Jha, P.; Koiry, S. P.; Saxena, Vibha; Veerender, P.; Aswal, D. K.; Gupta, S. K. [Technical Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai-400085 (India)

    2014-03-31

    The solution of thin graphene-sheets obtained from a simple ultrasonic exfoliation process was found to chemically interact with [6,6]-phenyl C{sub 71} butyric acid methyl ester (PCBM) molecules. The thinner graphene-sheets have significantly altered the positions of highest occupied molecular orbital and lowest unoccupied molecular orbital of PCBM, which is beneficial for the enhancement of the open circuit voltage of the solar cells. Flexible bulk heterojunction solar cells fabricated using poly 3-hexylthiophene (P3HT):PCBM-graphene exhibited a power conversion efficiency of 2.51%, which is a ?2-fold increase as compared to those fabricated using P3HT:PCBM. Inclusion of graphene-sheets not only improved the open-circuit voltage but also enhanced the short-circuit current density owing to an improved electron transport.

  4. Flow-enhanced solution printing of all-polymer solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Diao, Ying; Zhou, Yan; Kurosawa, Tadanori; Shaw, Leo; Wang, Cheng; Park, Steve; Guo, Yikun; Reinspach, Julia A.; Gu, Kevin; Gu, Xiaodan; et al

    2015-08-12

    Morphology control of solution coated solar cell materials presents a key challenge limiting their device performance and commercial viability. Here we present a new concept for controlling phase separation during solution printing using an all-polymer bulk heterojunction solar cell as a model system. The key aspect of our method lies in the design of fluid flow using a microstructured printing blade, on the basis of the hypothesis of flow-induced polymer crystallization. Our flow design resulted in a similar to 90% increase in the donor thin film crystallinity and reduced microphase separated donor and acceptor domain sizes. The improved morphology enhancedmore » all metrics of solar cell device performance across various printing conditions, specifically leading to higher short-circuit current, fill factor, open circuit voltage and significantly reduced device-to-device variation. However, we expect our design concept to have broad applications beyond all-polymer solar cells because of its simplicity and versatility.« less

  5. Photochemical charges separation and photoelectric properties of flexible solar cells with two types of heterostructures

    SciTech Connect (OSTI)

    Liu, Xiangyang E-mail: yzgu@henu.edu.cn; Wang, Shun; Zheng, Haiwu; Cheng, Xiuying; Gu, Yuzong E-mail: yzgu@henu.edu.cn

    2015-12-14

    Photochemical charges generation, separation, and transport at nanocrystal interfaces are central to energy conversion for solar cells. Here, Zn{sub 2}SnO{sub 4} nanowires/Cu{sub 4}Bi{sub 4}S{sub 9} (ZTO/CBS), ZTO nanowires/CBS-reduced graphene oxide (ZTO/CBS-RGO), and bulk heterojunction (BHJ) solar cells were measured. The signals of steady state and electric field-induced surface photovoltage indicate that RGO with high electron mobility can evidently improve the photovoltaic response. Besides, ZTO/CBS and ZTO/CBS-RGO cells exhibit the excellent performance and the highest efficiencies of 1.2% and 2.8%, respectively. The internal relations of photoelectric properties to some factors, such as film thickness, direct paths, RGO conductive network, energy level matching, etc., were discussed in detail. Qualitative and quantitative analyses further verified the comprehensive effect of RGO and other factors. Importantly, the fine bendable characteristic of BHJ solar cells with excellent efficiency and facile, scalable production gives the as-made flexible solar cells device potential for practical application in future.

  6. Current- and lattice-matched tandem solar cell

    DOE Patents [OSTI]

    Olson, J.M.

    1985-10-21

    A multijunction (cascade) tandem photovoltaic solar cell device is fabricated of a Ga/sub x/In/sub 1-x/P (0.505 equal to or less than x equal to or less than 0.515) top cell semiconductor lattice-matched to a GaAs bottom cell semiconductor at a low resistance heterojunction, preferably a p/sup +//n/sup +/ heterojunction between the cells. The top and bottom cells are both lattice-matched and current-matched for high efficiency solar radiation conversion to electrical energy.

  7. Electronic Structure of Fullerene Acceptors in Organic Bulk-Heterojunctions. A Combined EPR and DFT Study

    SciTech Connect (OSTI)

    Mardis, Kristy L.; Webb, J.; Holloway, Tarita; Niklas, Jens; Poluektov, Oleg G.

    2015-11-16

    Organic photovoltaic (OPV) devices are a promising alternative energy source. Attempts to improve their performance have focused on the optimization of electron-donating polymers, while electron-accepting fullerenes have received less attention. Here, we report an electronic structure study of the widely used soluble fullerene derivatives PC61BM and PC71BM in their singly reduced state, that are generated in the polymer:fullerene blends upon light-induced charge separation. Density functional theory (DFT) calculations characterize the electronic structures of the fullerene radical anions through spin density distributions and magnetic resonance parameters. The good agreement of the calculated magnetic resonance parameters with those determined experimentally by advanced electron paramagnetic resonance (EPR) allows the validation of the DFT calculations. Thus, for the first time, the complete set of magnetic resonance parameters including directions of the principal g-tensor axes were determined. For both molecules, no spin density is present on the PCBM side chain, and the axis of the largest g-value lies along the PCBM molecular axis. While the spin density distribution is largely uniform for PC61BM, it is not evenly distributed for PC71BM.

  8. P3HT/PCBM Bulk Heterojunction Organic Photovoltaics. Correlating Efficiency and Morphology

    SciTech Connect (OSTI)

    Chen, Dian; Nakahara, Atsuhiro; Wei, Dongguang; Nordlund, Dennis; Russell, Thomas P.

    2010-12-21

    Controlling thin film morphology is key in optimizing the efficiency of polymer-based photovoltaic (PV) devices. We show that morphology and interfacial behavior of the multicomponent active layers confined between electrodes are strongly influenced by the preparation conditions. Here, we provide detailed descriptions of the morphologies and interfacial behavior in thin film mixtures of regioregular poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM), a typical active layer in a polymer-based PV device, in contact with an anode layer of PEDOT-PSS and either unconfined or confined by an Al cathode during thermal treatment. Small angle neutron scattering and electron microscopy show that a nanoscopic, bicontinuous morphology develops within seconds of annealing at 150 C and coarsens slightly with further annealing. P3HT and PCBM are shown to be highly miscible, to exhibit a rapid, unusual interdiffusion, and to display a preferential segregation of one component to the electrode interfaces. The ultimate morphology is related to device efficiency.

  9. Effects of Active Layer Thickness and Thermal Annealing on Polythiophene: Fullerene Bulk Heterojunction Photovoltaic Devices

    SciTech Connect (OSTI)

    Zeng, L.; Tang, C.W.; Chen, S.H.

    2010-08-10

    The effect of thermal annealing on photovoltaic devices comprising poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PCBM) with thicknesses up to 1200 nm was investigated. Without thermal annealing, the efficiency of the as-prepared devices decreased with increasing active layer thickness, reflecting largely a reduction in the short-circuit current density and an inverse photocurrent spectral response. Thermal annealing of the full devices was found to substantially recover thick-film device efficiencies while reducing the thin-film device efficiencies. The profound variations in photovoltaic characteristics were interpreted in terms of vertical phase separation in the P3HT:PCBM blend film and Li+ diffusion from the LiF/Al contact.

  10. Patterned Arrays of Lateral Heterojunctions within Monolayer 2D Semiconductors

    SciTech Connect (OSTI)

    Mahjouri-Samani, Masoud; Lin, Ming-Wei; Wang, Kai; Lupini, Andrew R; Lee, Jaekwang; Basile Carrasco, Leonardo A; Rouleau, Christopher M; Boulesbaa, Abdelaziz; Puretzky, Alexander A; Ivanov, Ilia N; Xiao, Kai; Yoon, Mina; Geohegan, David B

    2015-01-01

    The formation of semiconductor heterojunctions and their high density integration are foundations of modern electronics and optoelectronics. To enable two-dimensional (2D) crystalline semiconductors as building blocks in next generation electronics, developing methods to deterministically form lateral heterojunctions is crucial. Here we demonstrate a process strategy for the formation of lithographically-patterned lateral semiconducting heterojunctions within a single 2D crystal. E-beam lithography is used to pattern MoSe2 monolayer crystals with SiO2, and the exposed locations are selectively and totally converted to MoS2 using pulsed laser deposition (PLD) of sulfur in order to form MoSe2/MoS2 heterojunctions in predefined patterns. The junctions and conversion process are characterized by atomically resolved scanning transmission electron microscopy, photoluminescence, and Raman spectroscopy. This demonstration of lateral semiconductor heterojunction arrays within a single 2D crystal is an essential step for the lateral integration of 2D semiconductor building blocks with different electronic and optoelectronic properties for high-density, ultrathin circuitry.

  11. Patterned Arrays of Lateral Heterojunctions within Monolayer 2D Semiconductors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mahjouri-Samani, Masoud; Lin, Ming-Wei; Wang, Kai; Lupini, Andrew R; Lee, Jaekwang; Basile Carrasco, Leonardo A; Rouleau, Christopher M; Boulesbaa, Abdelaziz; Puretzky, Alexander A; Ivanov, Ilia N; et al

    2015-01-01

    The formation of semiconductor heterojunctions and their high density integration are foundations of modern electronics and optoelectronics. To enable two-dimensional (2D) crystalline semiconductors as building blocks in next generation electronics, developing methods to deterministically form lateral heterojunctions is crucial. Here we demonstrate a process strategy for the formation of lithographically-patterned lateral semiconducting heterojunctions within a single 2D crystal. E-beam lithography is used to pattern MoSe2 monolayer crystals with SiO2, and the exposed locations are selectively and totally converted to MoS2 using pulsed laser deposition (PLD) of sulfur in order to form MoSe2/MoS2 heterojunctions in predefined patterns. The junctions and conversionmoreprocess are characterized by atomically resolved scanning transmission electron microscopy, photoluminescence, and Raman spectroscopy. This demonstration of lateral semiconductor heterojunction arrays within a single 2D crystal is an essential step for the lateral integration of 2D semiconductor building blocks with different electronic and optoelectronic properties for high-density, ultrathin circuitry.less

  12. Large area bulk superconductors

    DOE Patents [OSTI]

    Miller, Dean J.; Field, Michael B.

    2002-01-01

    A bulk superconductor having a thickness of not less than about 100 microns is carried by a polycrystalline textured substrate having misorientation angles at the surface thereof not greater than about 15.degree.; the bulk superconductor may have a thickness of not less than about 100 microns and a surface area of not less than about 50 cm.sup.2. The textured substrate may have a thickness not less than about 10 microns and misorientation angles at the surface thereof not greater than about 15.degree.. Also disclosed is a process of manufacturing the bulk superconductor and the polycrystalline biaxially textured substrate material.

  13. RAPID/Solar/Environment/California | Open Energy Information

    Open Energy Info (EERE)

    SolarEnvironmentCalifornia < RAPID | Solar | Environment Jump to: navigation, search RAPID Regulatory and Permitting Information Desktop Toolkit BETA About Bulk...

  14. Comprehensive Solutions for Integration of Solar Resources into...

    Broader source: Energy.gov (indexed) [DOE]

    tool by incorporating accurate forecasting of solar generation, and then integrate ... and hence the costs of system integration of solar generation into the bulk power system. ...

  15. Investigation of heterojunction photocells with an intermediate energy conversion stage at high illumination intensities

    SciTech Connect (OSTI)

    Alferov, Z.I.; Aripov, K.K.; Egorov, B.V.; Larionov, V.R.; Fedorova, V.D.; Ernandes, L.

    1980-04-01

    The current-voltage characteristics and sensitivity spectra were determined for high-current AlGaAs heterojunction photocells with a built-in luminescence wavelength converter. A study was made of the influence of the degree of doping of the p-type converter layer on the sensitivity spectrum and on the internal resistance. Photocells with the optimal degree of doping (N/sub A/approx.5 x 10/sup 17/ cm/sup -3/) illuminated with concentrated solar radiation had a power output up to 14.2 W (diameter 10 mm, degree of concentration K=1800, efficiency=15%). In the case of samples 4 mm in diameter a specific output power of 34 W/cm/sup 2/ and an efficiency of 18.2% (for K=2600) were achieved.

  16. Investigation of heterojunction photocells with an intermediate energy conversion stage at high illumination intensities

    SciTech Connect (OSTI)

    Alferov, Z.I.; Aripov, K.K.; Egorov, B.V.; Larinov, V.R.; Fedorova, V.D.; Ernandes, L.

    1980-04-01

    The current-voltage characteristics and sensitivity spectra were determined for high-current AlGaAs heterojunction photocells with a built-in luminescence wavelength converter. A study was made of the influence of the degree of doping of the p-type converter layer on the sensitivity spectrum and on the internal resistance. Photocells with the optimal degree of doping (N/sub A/ = x 10/sup 17/ cm/sup -3/) illuminated with concentrated solar radiation had a power output up to 14.2 W (diameter 10 mm, degree of concentration K = 1800, efficiency = 15%). In the case of samples 4 mm in diameter a specified output power of 34 W/cm/sup 2/ and an efficiency of 18.2% (for K = 2600) were achieved.

  17. MoS2 Heterojunctions by Thickness Modulation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Tosun, Mahmut; Fu, Deyi; Desai, Sujay B.; Ko, Changhyun; Seuk Kang, Jeong; Lien, Der-Hsien; Najmzadeh, Mohammad; Tongay, Sefaattin; Wu, Junqiao; Javey, Ali

    2015-06-30

    In this work, we report lateral heterojunction formation in as-exfoliated MoS2 flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurrent microscopy is performed to investigate the spatial photocurrent response along the length of the device including the source and the drain contacts as well as the monolayer-multilayer junction. The peak photocurrent is measured at the monolayer-multilayer interface, which is attributed to the formation of a type-I heterojunction. Finally, the work presents experimental and theoretical understanding of the band alignment andmore » photoresponse of thickness modulated MoS2 junctions with important implications for exploring novel optoelectronic devices.« less

  18. ALSNews Vol. 354

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    bulk heterojunction solar cells A stable three-dimensional topological Dirac semimetal Cd3As2 The Structural Basis of Pathogenic Subgenomic Flavivirus RNA (sfRNA) Production...

  19. Peculiarity of two thermodynamically-stable morphologies and...

    Office of Scientific and Technical Information (OSTI)

    of small molecule bulk heterojunction solar cells You are accessing a document from the Department of Energy's (DOE) Public Access Gateway for Energy & Science (PAGES). ...

  20. Charge Recombination, Transport Dynamics, and Interfacial Effects in Organic Solar Cells

    SciTech Connect (OSTI)

    Heeger, Alan; Bazan, Guillermo; Nguyen, Thuc-Quyen; Wudl, Fred

    2015-02-27

    The need for renewable sources of energy is well known. Conversion of sunlight to electricity using solar cells is one of the most important opportunities for creating renewable energy sources. The research carried out under DE-FG02-08ER46535 focused on the science and technology of “Plastic” solar cells comprised of organic (i.e. carbon based) semiconductors. The Bulk Heterojunction concept involves a phase separated blend of two organic semiconductors each with dimensions in the nano-meter length scale --- one a material that functions as a donor for electrons and the other a material that functions as an acceptor for electrons. The nano-scale inter-penetrating network concept for “Plastic” solar cells was created at UC Santa Barbara. A simple measure of the impact of this concept can be obtained from a Google search which gives 244,000 “hits” for the Bulk Heterojunction solar cell. Research funded through this program focused on four major areas: 1. Interfacial effects in organic photovoltaics, 2. Charge transfer and photogeneration of mobile charge carriers in organic photovoltaics, 3. Transport and recombination of the photogenerated charge carriers in organic photovoltaics, 4. Synthesis of novel organic semiconducting polymers and semiconducting small molecules, including conjugated polyelectrolytes. Following the discovery of ultrafast charge transfer at UC Santa Barbara in 1992, the nano-organic (Bulk Heterojunction) concept was formulated. The need for a morphology comprising two interpenetrating bicontinuous networks was clear: one network to carry the photogenerated electrons (negative charge) to the cathode and one network to carry the photo-generated holes (positive charge) to the anode. This remarkable self-assembled network morphology has now been established using Transmission electron Microscopy (TEM) either in the Phase Contrast mode or via TEM-Tomography. The steps involved in delivering power from a solar cell to an external circuit

  1. Cross-sectional electrostatic force microscopy of thin-film solar cells

    SciTech Connect (OSTI)

    Ballif, C.; Moutinho, H. R.; Al-Jassim, M. M.

    2001-01-15

    In a recent work, we showed that atomic force microscopy (AFM) is a powerful technique to image cross sections of polycrystalline thin films. In this work, we apply a modification of AFM, namely, electrostatic force microscopy (EFM), to investigate the electronic properties of cleaved II--VI and multijunction thin-film solar cells. We cleave the devices in such a way that they are still working with their nominal photovoltaic efficiencies and can be polarized for the measurements. This allows us to differentiate between surface effects (work function and surface band bending) and bulk device properties. In the case of polycrystalline CdTe/CdS/SnO{sub 2}/glass solar cells, we find a drop of the EFM signal in the area of the CdTe/CdS interface ({+-}50 nm). This drop varies in amplitude and sign according to the applied external bias and is compatible with an n-CdS/p-CdTe heterojunction model, thereby invalidating the possibility of a deeply buried n-p CdTe homojunction. In the case of a triple-junction GaInP/GaAs/Ge device, we observe a variation of the EFM signal linked to both the material work-function differences and to the voltage bias applied to the cell. We attempt a qualitative explanation of the results and discuss the implications and difficulties of the EFM technique for the study of such thin-film devices.

  2. Science Highlights- Center for Solar and Thermal Energy Conversion

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Highlight Slides Abstracts (Click on Title) and Science Highlight Slides (Click on Image) Highlights From 2014 Comparison of Ultrafast Pulse Measurement Methods Low-temperature Physical Properties of Cu2Se Modeling the Role of Donor/Acceptor Interface in Charge Transfer in SubPc/C60-based Solar Cells Universal Design Principles for Cascade Heterojunction Solar Cells with High Fill Factors and Internal Quantum Efficiencies Approaching 100% Exciton Management in Organic Photovoltaic Multi-donor

  3. 15.01.16 RH Perovskite Solar Cells - JCAP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Fabrication of High Efficiency Perovskite Solar Cells Li, Y., Cooper, J. K., Buonsanti, R., Giannini, G., Liu, Y., Toma, F. M. & Sharp, I. D. Fabrication of Planar Heterojunction Perovskite Solar Cells by Controlled Low-Pressure Vapor Annealing. J. Phys. Chem. Lett ., 6, 493-499, DOI: 10.1021/jz502720a (2015). Scientific Achievement A new synthetic method based on low-pressure and reduced-temperature vapor annealing was developed and demonstrated to yield efficient hybrid halide perovskites

  4. Photovoltaic devices based on high density boron-doped single-walled carbon nanotube/n-Si heterojunctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Saini, Viney; Li, Zhongrui; Bourdo, Shawn; Kunets, Vasyl P.; Trigwell, Steven; Couraud, Arthur; Rioux, Julien; Boyer, Cyril; Nteziyaremye, Valens; Dervishi, Enkeleda; et al

    2011-01-13

    A simple and easily processible photovoltaic device has been developed based on borondoped single-walled carbon nanotubes (B-SWNTs) and n-type silicon (n-Si) heterojunctions. The single-walled carbon nanotubes (SWNTs) were substitutionally doped with boron atoms by thermal annealing, in the presence of B2O3. The samples used for these studies were characterized by Raman spectroscopy, thermal gravimetric analysis (TGA), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS). The fully functional solar cell devices were fabricated by airbrush deposition that generated uniform B-SWNT films on top of the n-Si substrates. The carbon nanotube films acted as exciton-generation sites, charge collection and transportation, whilemore » the heterojunctions formed between B-SWNTs and n-Si acted as charge dissociation centers. The current-voltage characteristics in the absence of light and under illumination, as well as optical transmittance spectrum are reported here. It should be noted that the device fabrication process can be made amenable to scalability by depositing direct and uniform films using airbrushing, inkjet printing, or spin-coating techniques.« less

  5. Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

    SciTech Connect (OSTI)

    Chowdhury, Zahidur R. Kherani, Nazir P.

    2014-12-29

    This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide–plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparent passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are V{sub OC} of 666 mV, J{sub SC} of 29.5 mA-cm{sup −2}, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.

  6. Creating bulk nanocrystalline metal.

    SciTech Connect (OSTI)

    Fredenburg, D. Anthony; Saldana, Christopher J.; Gill, David D.; Hall, Aaron Christopher; Roemer, Timothy John; Vogler, Tracy John; Yang, Pin

    2008-10-01

    Nanocrystalline and nanostructured materials offer unique microstructure-dependent properties that are superior to coarse-grained materials. These materials have been shown to have very high hardness, strength, and wear resistance. However, most current methods of producing nanostructured materials in weapons-relevant materials create powdered metal that must be consolidated into bulk form to be useful. Conventional consolidation methods are not appropriate due to the need to maintain the nanocrystalline structure. This research investigated new ways of creating nanocrystalline material, new methods of consolidating nanocrystalline material, and an analysis of these different methods of creation and consolidation to evaluate their applicability to mesoscale weapons applications where part features are often under 100 {micro}m wide and the material's microstructure must be very small to give homogeneous properties across the feature.

  7. Explosive bulk charge

    SciTech Connect (OSTI)

    Miller, Jacob Lee

    2015-04-21

    An explosive bulk charge, including: a first contact surface configured to be selectively disposed substantially adjacent to a structure or material; a second end surface configured to selectively receive a detonator; and a curvilinear side surface joining the first contact surface and the second end surface. The first contact surface, the second end surface, and the curvilinear side surface form a bi-truncated hemispherical structure. The first contact surface, the second end surface, and the curvilinear side surface are formed from an explosive material. Optionally, the first contact surface and the second end surface each have a substantially circular shape. Optionally, the first contact surface and the second end surface consist of planar structures that are aligned substantially parallel or slightly tilted with respect to one another. The curvilinear side surface has one of a smooth curved geometry, an elliptical geometry, and a parabolic geometry.

  8. 2016 Solar Forecasting Workshop

    Office of Energy Efficiency and Renewable Energy (EERE)

    On August 3, 2016, the SunShot Initiative's systems integration subprogram hosted the Solar Forecasting Workshop to convene experts in the areas of bulk power system operations, distribution system operations, weather and solar irradiance forecasting, and photovoltaic system operation and modeling. The goal was to identify the technical challenges and opportunities in solar forecasting as a capability that can significantly reduce the integration cost of high levels of solar energy into the electricity grid. This will help SunShot to assess current technology and practices in this field and identify the gaps and needs for further research.

  9. Microfabricated bulk wave acoustic bandgap device (Patent) |...

    Office of Scientific and Technical Information (OSTI)

    Microfabricated bulk wave acoustic bandgap device Title: Microfabricated bulk wave acoustic bandgap device A microfabricated bulk wave acoustic bandgap device comprises a periodic ...

  10. Bulk Data Mover

    SciTech Connect (OSTI)

    2011-01-03

    Bulk Data Mover (BDM) is a high-level data transfer management tool. BDM handles the issue of large variance in file sizes and a big portion of small files by managing the file transfers with optimized transfer queue and concurrency management algorithms. For example, climate simulation data sets are characterized by large volume of files with extreme variance in file sizes. The BDN achieves high performance using a variety of techniques, including multi-thraded concurrent transfer connections, data channel caching, load balancing over multiple transfer servers, and storage i/o pre-fetching. Logging information from the BDM is collected and analyzed to study the effectiveness of the transfer management algorithms. The BDM can accept a request composed of multiple files or an entire directory. The request also contains the target site and directory where the replicated files will reside. If a directory is provided at the source, then the BDM will replicate the structure of the source directory at the target site. The BDM is capable of transferring multiple files concurrently as well as using parallel TCP streams. The optimal level of concurrency or parallel streams depends on the bandwidth capacity of the storage systems at both ends of the transfer as well as achievable bandwidth of the wide-area network. Hardware req.-PC, MAC, Multi-platform & Workstation; Software req.: Compile/version-Java 1.50_x or ablove; Type of files: source code, executable modules, installation instructions other, user guide; URL: http://sdm.lbl.gov/bdm/

  11. Bulk Data Mover

    Energy Science and Technology Software Center (OSTI)

    2011-01-03

    Bulk Data Mover (BDM) is a high-level data transfer management tool. BDM handles the issue of large variance in file sizes and a big portion of small files by managing the file transfers with optimized transfer queue and concurrency management algorithms. For example, climate simulation data sets are characterized by large volume of files with extreme variance in file sizes. The BDN achieves high performance using a variety of techniques, including multi-thraded concurrent transfer connections,more » data channel caching, load balancing over multiple transfer servers, and storage i/o pre-fetching. Logging information from the BDM is collected and analyzed to study the effectiveness of the transfer management algorithms. The BDM can accept a request composed of multiple files or an entire directory. The request also contains the target site and directory where the replicated files will reside. If a directory is provided at the source, then the BDM will replicate the structure of the source directory at the target site. The BDM is capable of transferring multiple files concurrently as well as using parallel TCP streams. The optimal level of concurrency or parallel streams depends on the bandwidth capacity of the storage systems at both ends of the transfer as well as achievable bandwidth of the wide-area network. Hardware req.-PC, MAC, Multi-platform & Workstation; Software req.: Compile/version-Java 1.50_x or ablove; Type of files: source code, executable modules, installation instructions other, user guide; URL: http://sdm.lbl.gov/bdm/« less

  12. Performance optimization of solar cells based on colloidal lead sulfide nanocrystals

    SciTech Connect (OSTI)

    Ulfa, Maria

    2014-02-24

    Colloidal semiconducting quantum dot nanocrystals (NCs) have attracted extensive interest as active building-block for low-cost solution-processed photovoltaic due to their size tunable absorption from the visible to near IR. Among various nanocrystal composition, lead sulfide (PbS), having a bulk bandgap of 0.41 eV, are particularly attractive for photovoltaic applications due to their excellent photosensitivity in the near IR. Starting from colloidal synthesis, in this project functional solar cells are fabricated and characterized based on the nearly monodispersed colloidal PbS nanocrystals that we synthesized. These NC-solar cells are fabricated under a “depleted heterojunction” device architecture containing a planar “tipe II” heretojunction formed by a layer of electron-transporting TiO{sub 2} and a layer of PbS NCs. Relevant structural, optical, and electrical characterizations are performed on NCs and their devices. To understand the operational mechanism of these NC-based solar cells, various material and device aspects are investigated in this work aiming for optimized photovoltaic performance. These aspects include the effect of: (1) NC dimensions (and thus their band gaps); (2) passivation of surface traps through post-synthesis treatments; (3) NC surface ligand-exchange; and (4) interfacial modifications at the heterojunction. The most optimized photovoltaic performance is found after combining the surface trap passivation strategy by halides, ligand-exchange by 3-mercaptopropionic acids, and interfacial TiCl4 treatment, leading to a peak open-circuit voltage of 0.53 V, a short-circuit current density of 14.03 mAcm{sup −2}, and a power conversion efficiency of 3.25%.

  13. Commercialization of Bulk Thermoelectric Materials for Power...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Commercialization of Bulk Thermoelectric Materials for Power Generation Commercialization of Bulk Thermoelectric Materials for Power Generation Critical aspects of technology ...

  14. Experimental determination of band offsets of NiO-based thin film heterojunctions

    SciTech Connect (OSTI)

    Kawade, Daisuke; Sugiyama, Mutsumi, E-mail: mutsumi@rs.noda.tus.ac.jp [Faculty of Science and Technology/Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Chichibu, Shigefusa F. [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 9808577 (Japan)

    2014-10-28

    The energy band diagrams of NiO-based solar cell structures that use various n-type oxide semiconductors such as ZnO, Mg{sub 0.3}Zn{sub 0.7}O, Zn{sub 0.5}Sn{sub 0.5}O, In{sub 2}O{sub 3}:Sn (ITO), SnO{sub 2}, and TiO{sub 2} were evaluated by photoelectron yield spectroscopy. The valence band discontinuities were estimated to be 1.6?eV for ZnO/NiO and Mg{sub 0.3}Zn{sub 0.7}O/NiO, 1.7?eV for Zn{sub 0.5}Sn{sub 0.5}O/NiO and ITO/NiO, and 1.8?eV for SnO{sub 2}/NiO and TiO{sub 2}/NiO heterojunctions. By using the valence band discontinuity values and corresponding energy bandgaps of the layers, energy band diagrams were developed. Judging from the band diagram, an appropriate solar cell consisting of p-type NiO and n-type ZnO layers was deposited on ITO, and a slight but noticeable photovoltaic effect was obtained with an open circuit voltage (V{sub oc}) of 0.96?V, short circuit current density (J{sub sc}) of 2.2??A/cm{sup 2}, and fill factor of 0.44.

  15. Layered insulator hexagonal boron nitride for surface passivation in quantum dot solar cell

    SciTech Connect (OSTI)

    Shanmugam, Mariyappan; Jain, Nikhil; Jacobs-Gedrim, Robin; Yu, Bin; Xu, Yang

    2013-12-09

    Single crystalline, two dimensional (2D) layered insulator hexagonal boron nitride (h-BN), is demonstrated as an emerging material candidate for surface passivation on mesoporous TiO{sub 2}. Cadmium selenide (CdSe) quantum dot based bulk heterojunction (BHJ) solar cell employed h-BN passivated TiO{sub 2} as an electron acceptor exhibits photoconversion efficiency ?46% more than BHJ employed unpassivated TiO{sub 2}. Dominant interfacial recombination pathways such as electron capture by TiO{sub 2} surface states and recombination with hole at valence band of CdSe are efficiently controlled by h-BN enabled surface passivation, leading to improved photovoltaic performance. Highly crystalline, confirmed by transmission electron microscopy, dangling bond-free 2D layered h-BN with self-terminated atomic planes, achieved by chemical exfoliation, enables efficient passivation on TiO{sub 2}, allowing electronic transport at TiO{sub 2}/h-BN/CdSe interface with much lower recombination rate compared to an unpassivated TiO{sub 2}/CdSe interface.

  16. Imaging the Solar Cell P-N Junction and Depletion Region Using Secondary Electron Contrast

    SciTech Connect (OSTI)

    Heath, J. T.; Jiang, C. S.; Al-Jassim, M. M.

    2011-01-01

    We report on secondary electron (SE) images of cross-sectioned multicrystalline Si and GaAs/GaInP solar cell devices, focusing on quantifying the relationship between the apparent n{sup +}-p contrast and characteristic electronic features of the device. These samples allow us to compare the SE signal from devices which have very different physical characteristics: differing materials, diffused junction versus abrupt junction, heterojunction versus homojunction. Despite these differences, we find that the SE image contrast for both types of sample, and as a function of reverse bias across the diode, closely agrees with PC1D simulations of the bulk electrostatic potential in the device, accurately yielding the depletion edge and width. A spatial derivative of the SE data shows a local maximum at the metallurgical junction. Such data are valuable, for example, in studying the conformity of a diffused junction to the textured surface topography. These data also extend our understanding of the origin of the SE contrast.

  17. Solar Circuitry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Circuitry" with the Solar Powered Energy Kit Curriculum: Solar Power- (lightelectromagnetic radiation, electricity, circuitry, efficiency, energy transformation, subatomic ...

  18. RAPID/Solar/Land Access/Nevada | Open Energy Information

    Open Energy Info (EERE)

    RAPIDSolarLand AccessNevada < RAPID | Solar | Land Access Jump to: navigation, search RAPID Regulatory and Permitting Information Desktop Toolkit BETA About Bulk...

  19. Solar collection

    SciTech Connect (OSTI)

    Cole, S.L.

    1984-08-01

    This report contains summaries and pictures of projects funded by the Appropriate Technology Small Grants Program which include the following solar technologies: solar dish; photovoltaics; passive solar building and solar hot water system; Trombe wall; hot air panel; hybrid solar heating system; solar grain dryer; solar greenhouse; solar hot water workshops; and solar workshops.

  20. Thin film cadmium telluride and zinc phosphide solar cells

    SciTech Connect (OSTI)

    Chu, T.

    1984-10-01

    This report describes research performed from June 1982 to October 1983 on the deposition of cadmium telluride films by direct combination of the cadmium and tellurium vapor on foreign substrates. Nearly stoichiometric p-type cadmium telluride films and arsenic-doped p-type films have been prepared reproducibly. Major efforts were directed to the deposition and characterization of heterojunction window materials, indium tin oxide, fluorine-doped tin oxide, cadmium oxide, and zinc oxide. A number of heterojunction solar cells were prepared, and the best thin-film ITO/CdTe solar cells had an AMl efficiency of about 7.2%. Zinc phosphide films were deposited on W/steel substrates by the reaction of zinc and phosphine in a hydrogen flow. Films without intentional doping had an electrical resistivity on the order of 10/sup 6/ ohm-cm, and this resistivity may be reduced to about 5 x 10/sup 4/ ohm-cm by adding hydrogen chloride or hydrogen bromide to the reaction mixture. Lower resistivity films were deposited by adding a controlled amount of silver nitrate solution on to the substrate surface. Major efforts were directed to the deposition of low-resistivity zinc selenide in order to prepare ZnSe/An/sub 3/P/sub 2/ heterojunction thin-film solar cells. However, zinc selenide films deposited by vacuum evaporation and chemical vapor deposition techniques were all of high resistivity.

  1. Band alignment and interfacial structure of ZnO/Si heterojunction...

    Office of Scientific and Technical Information (OSTI)

    Band alignment and interfacial structure of ZnOSi heterojunction with Alsub 2Osub 3 and HfOsub 2 as interlayers Citation Details In-Document Search Title: Band alignment and ...

  2. Influence of oriented topological defects on the mechanical properties of carbon nanotube heterojunctions

    SciTech Connect (OSTI)

    Lee, We-Jay [National Center for High-Performance Computing; Chang, Jee-Gong [National Center for High-Performance Computing; Yang, An-Cheng [National Center for High-Performance Computing; Wang, Yeng-Tseng [National Center for High-Performance Computing; Su, Wan-Sheng [National Center for High-Performance Computing; Wang, Cai-Zhuang [Ames Laboratory; Ho, Kai-Ming [Ames Laboratory

    2013-10-10

    The mechanical properties of finite-length (5,0)/(8,0) single-walled carbon nanotube (SWCNT) heterojunctions with manipulated topological defects are investigated using molecular dynamics simulation calculations. The results show that the mechanical properties and deformation behavior of SWCNT heterojunctions are mainly affected not only by the diameter of the thinner segment of the SWCNT heterojunction but also by the orientation of the heptagon-heptagon (7-7) pair in the junction region. Moreover, the orientation of the 7-7 pair strongly affects those properties in the compression loading than those in tensile loading. Finally, it is found that the location of buckling deformation in the heterojunctions is dependent on the orientation of the 7-7 pair in the compression.

  3. Substantial bulk photovoltaic effect enhancement via nanolayering

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Fenggong; Young, Steve M.; Zheng, Fan; Grinberg, Ilya; Rappe, Andrew M.

    2016-01-21

    Spontaneous polarization and inversion symmetry breaking in ferroelectric materials lead to their use as photovoltaic devices. However, further advancement of their applications are hindered by the paucity of ways of reducing bandgaps and enhancing photocurrent. By unravelling the correlation between ferroelectric materials’ responses to solar irradiation and their local structure and electric polarization landscapes, here we show from first principles that substantial bulk photovoltaic effect enhancement can be achieved by nanolayering PbTiO3 with nickel ions and oxygen vacancies ((PbNiO2)x(PbTiO3)1–x). The enhancement of the total photocurrent for different spacings between the Ni-containing layers can be as high as 43 times duemore » to a smaller bandgap and photocurrent direction alignment for all absorption energies. This is due to the electrostatic effect that arises from nanolayering. Lastly, this opens up the possibility for control of the bulk photovoltaic effect in ferroelectric materials by nanoscale engineering of their structure and composition.« less

  4. Community Shared Solar with Solarize | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Community Shared Solar with Solarize Community Shared Solar with Solarize

  5. Switching behaviors of graphene-boron nitride nanotube heterojunctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Parashar, Vyom; Durand, Corentin P.; Hao, Boyi; Amorim, Rodrigo G.; Pandey, Ravindra; Tiwari, Bishnu; Zhang, Dongyan; Liu, Yang; Li, An -Ping; Yap, Yoke Khin

    2015-07-20

    High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digital switches. These graphene-BNNT heterojunctions were characterized at room temperature by four-probe scanning tunneling microscopy (4-probe STM) under real-time monitoring of scanning electron microscopy (SEM). A switching ratio as high as 105 at a turn-on voltage as low as 0.5more » V were recorded. Simulation by density functional theory (DFT) suggests that mismatch of the density of states (DOS) is responsible for these novel switching behaviors.« less

  6. Switching behaviors of graphene-boron nitride nanotube heterojunctions

    SciTech Connect (OSTI)

    Parashar, Vyom; Durand, Corentin P.; Hao, Boyi; Amorim, Rodrigo G.; Pandey, Ravindra; Tiwari, Bishnu; Zhang, Dongyan; Liu, Yang; Li, An -Ping; Yap, Yoke Khin

    2015-07-20

    High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digital switches. These graphene-BNNT heterojunctions were characterized at room temperature by four-probe scanning tunneling microscopy (4-probe STM) under real-time monitoring of scanning electron microscopy (SEM). A switching ratio as high as 105 at a turn-on voltage as low as 0.5 V were recorded. Simulation by density functional theory (DFT) suggests that mismatch of the density of states (DOS) is responsible for these novel switching behaviors.

  7. Optimizing the fabrication process and interplay of device components of polymer solar cells using a field-based multiscale solar-cell algorithm

    SciTech Connect (OSTI)

    Donets, Sergii; Pershin, Anton; Baeurle, Stephan A.

    2015-05-14

    Both the device composition and fabrication process are well-known to crucially affect the power conversion efficiency of polymer solar cells. Major advances have recently been achieved through the development of novel device materials and inkjet printing technologies, which permit to improve their durability and performance considerably. In this work, we demonstrate the usefulness of a recently developed field-based multiscale solar-cell algorithm to investigate the influence of the material characteristics, like, e.g., electrode surfaces, polymer architectures, and impurities in the active layer, as well as post-production treatments, like, e.g., electric field alignment, on the photovoltaic performance of block-copolymer solar-cell devices. Our study reveals that a short exposition time of the polymer bulk heterojunction to the action of an external electric field can lead to a low photovoltaic performance due to an incomplete alignment process, leading to undulated or disrupted nanophases. With increasing exposition time, the nanophases align in direction to the electric field lines, resulting in an increase of the number of continuous percolation paths and, ultimately, in a reduction of the number of exciton and charge-carrier losses. Moreover, we conclude by modifying the interaction strengths between the electrode surfaces and active layer components that a too low or too high affinity of an electrode surface to one of the components can lead to defective contacts, causing a deterioration of the device performance. Finally, we infer from the study of block-copolymer nanoparticle systems that particle impurities can significantly affect the nanostructure of the polymer matrix and reduce the photovoltaic performance of the active layer. For a critical volume fraction and size of the nanoparticles, we observe a complete phase transformation of the polymer nanomorphology, leading to a drop of the internal quantum efficiency. For other particle-numbers and -sizes

  8. Nanostructured High Temperature Bulk Thermoelectric Energy Conversion...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    High Temperature Bulk Thermoelectric Energy Conversion for Efficient Waste Heat Recovery Nanostructured High Temperature Bulk Thermoelectric Energy Conversion for Efficient Waste ...

  9. RAPID/BulkTransmission | Open Energy Information

    Open Energy Info (EERE)

    regulatory processes and requirements by searching our regulatory flowchart library. Learn more about bulk transmission. BulkTransCoverage.png Regulations and permitting...

  10. Bulk Electronic Structure of Quasicrystals (Journal Article)...

    Office of Scientific and Technical Information (OSTI)

    Bulk Electronic Structure of Quasicrystals Prev Next Title: Bulk Electronic Structure of Quasicrystals Authors: Nayak, J. ; Maniraj, M. ; Rai, Abhishek ; Singh, Sanjay ; ...

  11. Bulk Electronic Structure of Quasicrystals (Journal Article)...

    Office of Scientific and Technical Information (OSTI)

    Bulk Electronic Structure of Quasicrystals Citation Details In-Document Search Title: Bulk Electronic Structure of Quasicrystals Authors: Nayak, J. ; Maniraj, M. ; Rai, Abhishek ; ...

  12. Method for making graded I-III-VI.sub.2 semiconductors and solar cell obtained thereby

    DOE Patents [OSTI]

    Devaney, Walter E.

    1987-08-04

    Improved cell photovoltaic conversion efficiencies are obtained by the simultaneous elemental reactive evaporation process of Mickelsen and Chen for making semiconductors by closer control of the evaporation rates and substrate temperature during formation of the near contact, bulk, and near junction regions of a graded I-III-VI.sub.2, thin film, semiconductor, such as CuInSe.sub.2 /(Zn,Cd)S or another I-III-VI.sub.2 /II-VI heterojunction.

  13. Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mahjouri-Samani, Masoud; Lin, Ming-Wei; Wang, Kai; Lupini, Andrew R.; Lee, Jaekwang; Basile, Leonardo; Boulesbaa, Abdelaziz; Rouleau, Christopher M.; Puretzky, Alexander A.; Ivanov, Ilia N.; et al

    2015-07-22

    The formation of semiconductor heterojunctions and their high density integration are foundations of modern electronics and optoelectronics. To enable two-dimensional (2D) crystalline semiconductors as building blocks in next generation electronics, developing methods to deterministically form lateral heterojunctions is crucial. Here we demonstrate a process strategy for the formation of lithographically-patterned lateral semiconducting heterojunctions within a single 2D crystal. E-beam lithography is used to pattern MoSe2 monolayer crystals with SiO2, and the exposed locations are selectively and totally converted to MoS2 using pulsed laser deposition (PLD) of sulfur in order to form MoSe2/MoS2 heterojunctions in predefined patterns. The junctions and conversionmore » process are characterized by atomically resolved scanning transmission electron microscopy, photoluminescence, and Raman spectroscopy. This demonstration of lateral semiconductor heterojunction arrays within a single 2D crystal is an essential step for the lateral integration of 2D semiconductor building blocks with different electronic and optoelectronic properties for high-density, ultrathin circuitry.« less

  14. Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors

    SciTech Connect (OSTI)

    Mahjouri-Samani, Masoud; Lin, Ming-Wei; Wang, Kai; Lupini, Andrew R.; Lee, Jaekwang; Basile, Leonardo; Boulesbaa, Abdelaziz; Rouleau, Christopher M.; Puretzky, Alexander A.; Ivanov, Ilia N.; Xiao, Kai; Yoon, Mina; Geohegan, David B.

    2015-07-22

    The formation of semiconductor heterojunctions and their high density integration are foundations of modern electronics and optoelectronics. To enable two-dimensional (2D) crystalline semiconductors as building blocks in next generation electronics, developing methods to deterministically form lateral heterojunctions is crucial. Here we demonstrate a process strategy for the formation of lithographically-patterned lateral semiconducting heterojunctions within a single 2D crystal. E-beam lithography is used to pattern MoSe2 monolayer crystals with SiO2, and the exposed locations are selectively and totally converted to MoS2 using pulsed laser deposition (PLD) of sulfur in order to form MoSe2/MoS2 heterojunctions in predefined patterns. The junctions and conversion process are characterized by atomically resolved scanning transmission electron microscopy, photoluminescence, and Raman spectroscopy. This demonstration of lateral semiconductor heterojunction arrays within a single 2D crystal is an essential step for the lateral integration of 2D semiconductor building blocks with different electronic and optoelectronic properties for high-density, ultrathin circuitry.

  15. Solar Newsletter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sandia Labs Contributes to Solar Industry Innovation: A Partnership Story Customers & Partners, News, Partnership, Photovoltaic, Renewable Energy, Solar, Solar Newsletter Sandia ...

  16. A small-signal generator based on a multi-layer graphene/molybdenum disulfide heterojunction

    SciTech Connect (OSTI)

    Tan, Zhen; Tian, He; Feng, Tingting; Zhao, Lianfeng; Xie, Dan; Yang, Yi; Xiao, Lei; Wang, Jing; Ren, Tian-Ling E-mail: JunXu@tsinghua.edu.cn; Xu, Jun E-mail: JunXu@tsinghua.edu.cn

    2013-12-23

    In this work, we fabricate a heterojunction small-signal generator (HSSG) based on a graphene-molybdenum disulfide (MoS{sub 2}) heterojunction. The HSSG is fundamentally different from any analog device developed previously. The HSSG is composed of two quasi-2D heterojunctions and has three terminals named injector (I), recombinator (R), and generator (G). MoS{sub 2} serves as I and G, and graphene works as R in the HSSG. The scale coefficient (??=?I{sub G}/I{sub R}) of the HSSG is 1.14??10{sup ?4} (V{sub IG,?IR}?=?0.2?V) to 1.95??10{sup ?4} (V{sub IG,?IR}?=?1?V). The current generated from G could be as low as pA scale, which reveals the good performance of the HSSG.

  17. Visualizing the photovoltaic behavior of a type-II p-n heterojunction superstructure

    SciTech Connect (OSTI)

    Xing, Juanjuan; Takeguchi, Masaki; Hashimoto, Ayako; Cao, Junyu; Ye, Jinhua

    2014-04-21

    Photovoltaic behavior of a CaFe{sub 2}O{sub 4}/ZnFe{sub 2}O{sub 4} p-n multi-junction was investigated with electron holography combined with an in situ light irradiation system. Potential profiles of the samples with and without light irradiation were extracted to measure the open circuit photovoltage generated either by the whole heterojunction superstructure or from each p-n junction. Investigation on the variation in the energy band configuration under light irradiation revealed the mechanism involved in the photoelectric effect, with respect to the properties of the heterojunction and its periodic quantum structure.

  18. Critical role of domain crystallinity, domain purity and domain interface sharpness for reduced bimolecular recombination in polymer solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Venkatesan, Swaminathan; Chen, Jihua; Ngo, Evan C.; Dubey, Ashish; Khatiwada, Devendra; Zhang, Cheng; Qiao, Qiquan

    2014-12-31

    In this study, inverted bulk heterojunction solar cells were fabricated using poly(3-hexylthiophene) (P3HT) blended with two different fullerene derivatives namely phenyl-C61-butyric acid methyl ester (PC60BM) and indene-C60 bis-adduct (IC60BA). The effects of annealing temperatures on the morphology, optical and structural properties were studied and correlated to differences in photovoltaic device performance. It was observed that annealing temperature significantly improved the performance of P3HT:IC60BA solar cells while P3HT:PC60BM cells showed relatively less improvement. The performance improvement is attributed to the extent of fullerene mixing with polymer domains. Energy filtered transmission electron microscopy (EFTEM) and x-ray diffraction (XRD) results showed that ICBAmore » mixes with disordered P3HT much more readily than PC60BM which leads to lower short circuit current density and fill factor for P3HT:IC60BA cells annealed below 120°C. Annealing above 120°C improves the crystallinity of P3HT in case of P3HT:IC60BA whereas in P3HT:PC60BM films, annealing above 80°C leads to negligible change in crystallinity. Crystallization of P3HT also leads to higher domain purity as seen EFTEM. Further it is seen that cells processed with additive nitrobenzene (NB) showed enhanced short circuit current density and power conversion efficiency regardless of the fullerene derivative used. Addition of NB led to nanoscale phase separation between purer polymer and fullerene domains. Kelvin probe force microscopy (KPFM) images showed that enhanced domain purity in additive casted films led to a sharper interface between polymer and fullerene. Lastly, enhanced domain purity and interfacial sharpness led to lower bimolecular recombination and higher mobility and charge carrier lifetime in NB modified devices.« less

  19. Bulk Hauling Equipment for CHG

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    BULK HAULING EQUIPMENT FOR CHG Don Baldwin Director of Product Development - Hexagon Lincoln HEXAGON LINCOLN TITAN(tm) Module System Compressed Hydrogen Gas * Capacity 250 bar - 616 kg 350 bar - 809 kg 540 bar - 1155 kg * Gross Vehicle Weight (with prime mover) 250 bar - 28 450 kg 350 bar - 30 820 kg 540 bar - 39 440 kg * Purchase Cost 250 bar - $510,000 350 bar - $633,750 540 bar - $1,100,000 Compressed Natural Gas * Capacity (250 bar at 15 C) - 7412 kg * GVW (With prime mover) - 35 250 kg *

  20. Self-Propagating Molecular Assemblies as Interlayers for Efficient Inverted Build-Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Motiei, L.; Yao, Y.; Choudhury, J.; Yan, Hao; Marks, Tobin J.; Van de Boom, M. E.; Facchetti, Antonio

    2010-09-15

    Here we report the first use of self-propagating molecule-based assemblies (SPMAs) as efficient electron-transporting layers for inverted organic photovoltaic (OPV) cells. P3HT-PCBM cells functionalized with optimized SPMAs exhibit power conversion efficiencies approaching 3.6% (open circuit voltage = 0.6 V) vs 1.5% and 2.4% for the bare ITO and Cs{sub 2}CO{sub 3}-coated devices, respectively. The dependence of cell response parameters on interlayer thickness is investigated, providing insight into how to further optimize device performance.

  1. Final Report - High efficiency heterojunction solar cell on 30μm...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    To achieve grid parity, photovoltaic (PV) technologies must reduce the production cost of ... The SunShot Swerve Retrospective Benefit-Cost Evaluation of DOE Investment in Photovoltaic ...

  2. Thermoelectric Bulk Materials from the Explosive Consolidation...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Thermoelectric Bulk Materials from the Explosive Consolidation of Nanopowders Describes technique of explosively consolidating nanopowders to yield fully dense, consolidated, ...

  3. Center for Energy Nanoscience at USC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    L. Improving open circuit potential in hybrid P3HT:CdSe bulk heterojunction solar cells via colloidal tert-butylthiol ligand exchange ACS Nano, 6(5), 4222-30 (2012). DOI:...

  4. Heterojunction band offsets and dipole formation at BaTiO{sub 3}/SrTiO{sub 3} interfaces

    SciTech Connect (OSTI)

    Balaz, Snjezana; Zeng, Zhaoquan; Brillson, Leonard J.; Department of Physics, The Ohio State University, 191 West Woodruff, Columbus, Ohio 43210

    2013-11-14

    We used a complement of photoemission and cathodoluminescence techniques to measure formation of the BaTiO{sub 3} (BTO) on SrTiO{sub 3} (STO) heterojunction band offset grown monolayer by monolayer by molecular beam epitaxy. X-ray photoemission spectroscopy (XPS) provided core level and valence band edge energies to monitor the valence band offset in-situ as the first few crystalline BTO monolayers formed on the STO substrate. Ultraviolet photoemission spectroscopy (UPS) measured Fermi level positions within the band gap, work functions, and ionization potentials of the growing BTO film. Depth-resolved cathodoluminescence spectroscopy measured energies and densities of interface states at the buried heterojunction. Kraut-based XPS heterojunction band offsets provided evidence for STO/BTO heterojunction linearity, i.e., commutativity and transitivity. In contrast, UPS and XPS revealed a large dipole associated either with local charge transfer or strain-induced polarization within the BTO epilayer.

  5. Low voltage tunneling magnetoresistance in CuCrO{sub 2}-based semiconductor heterojunctions at room temperature

    SciTech Connect (OSTI)

    Li, X. R.; Han, M. J.; Shan, C.; Hu, Z. G. Zhu, Z. Q.; Chu, J. H.; Wu, J. D.

    2014-12-14

    CuCrO{sub 2}-based heterojunction diodes with rectifying characteristics have been fabricated by combining p-type Mg-doped CuCrO{sub 2} and n-type Al-doped ZnO. It was found that the current for the heterojunction in low bias voltage region is dominated by the trap-assisted tunneling mechanism. Positive magnetoresistance (MR) effect for the heterojunction can be observed at room temperature due to the tunneling-induced antiparallel spin polarization near the heterostructure interface. The MR effect becomes enhanced with the magnetic field, and shows the maximum at a bias voltage around 0.5 V. The phenomena indicate that the CuCrO{sub 2}-based heterojunction is a promising candidate for low-power semiconductor spintronic devices.

  6. Solar Newsletter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stationary Power/Energy Conversion Efficiency/Solar Energy/Solar Newsletter Solar Newsletter Tara Camacho-Lopez 2016-07-11T20:14:36+00:00

  7. Solar Easements

    Broader source: Energy.gov [DOE]

    New Hampshire's "solar skyspace easement" provisions allow property owners to create solar easements in order to create and preserve a right to unobstructed access to solar energy. Easements remain...

  8. Single Molecule Spectroelectrochemistry of Interfacial Charge Transfer Dynamics In Hybrid Organic Solar Cell

    SciTech Connect (OSTI)

    Pan, Shanlin

    2014-11-16

    Our research under support of this DOE grant is focused on applied and fundamental aspects of model organic solar cell systems. Major accomplishments are: 1) we developed a spectroelectorchemistry technique of single molecule single nanoparticle method to study charge transfer between conjugated polymers and semiconductor at the single molecule level. The fluorescence of individual fluorescent polymers at semiconductor surfaces was shown to exhibit blinking behavior compared to molecules on glass substrates. Single molecule fluorescence excitation anisotropy measurements showed the conformation of the polymer molecules did not differ appreciably between glass and semiconductor substrates. The similarities in molecular conformation suggest that the observed differences in blinking activity are due to charge transfer between fluorescent polymer and semiconductor, which provides additional pathways between states of high and low fluorescence quantum efficiency. Similar spectroelectrochemistry work has been done for small organic dyes for understand their charge transfer dynamics on various substrates and electrochemical environments; 2) We developed a method of transferring semiconductor nanoparticles (NPs) and graphene oxide (GO) nanosheets into organic solvent for a potential electron acceptor in bulk heterojunction organic solar cells which employed polymer semiconductor as the electron donor. Electron transfer from the polymer semiconductor to semiconductor and GO in solutions and thin films was established through fluorescence spectroscopy and electroluminescence measurements. Solar cells containing these materials were constructed and evaluated using transient absorption spectroscopy and dynamic fluorescence techniques to understand the charge carrier generation and recombination events; 3) We invented a spectroelectorchemistry technique using light scattering and electroluminescence for rapid size determination and studying electrochemistry of single NPs in an

  9. Synthesis of bulk superhard semiconducting B-C material (Journal...

    Office of Scientific and Technical Information (OSTI)

    Synthesis of bulk superhard semiconducting B-C material Citation Details In-Document Search Title: Synthesis of bulk superhard semiconducting B-C material A bulk composite ...

  10. RAPID/BulkTransmission/Air Quality | Open Energy Information

    Open Energy Info (EERE)

    BulkTransmissionAir Quality < RAPID | BulkTransmission Jump to: navigation, search RAPID Regulatory and Permitting Information Desktop Toolkit BETA About Bulk Transmission...

  11. First Solar Manufacturing Solar Modules

    Broader source: Energy.gov [DOE]

    In this photograph, a First Solar associate handles photovoltaic materials at the company's Ohio manufacturing plant. First Solar is an industry partner with the U.S. Department of Energy Solar...

  12. Summary - Demonstration Bulk Vitrification System (DBVS) for...

    Office of Environmental Management (EM)

    External Technical Review of the Demonstration Bulk Vitrification System (DBVS) for ... What the ETR Team Recommended Additional cold testing and demonstration is needed for ...

  13. RAPID/Bulk Transmission | Open Energy Information

    Open Energy Info (EERE)

    Page Edit History RAPIDBulk Transmission < RAPID(Redirected from RAPIDOverviewBulkTransmission) Redirect page Jump to: navigation, search REDIRECT RAPIDBulkTransmission...

  14. Region Solar Inc Solar Inc California Renewable Energy Solar...

    Open Energy Info (EERE)

    Point Drive Fort Collins Colorado Solar Solar cell passive solar architectural glass solar grid tie inverter semiconductor flat panel display data storage http www advanced...

  15. NREL: Solar Research - Solar Newsletter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Newsletter Subscribe: To receive new issues by email, subscribe to the newsletter. The Solar Newsletter is a monthly electronic newsletter that provides information on NREL's ...

  16. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  17. Thin-layer black phosphorous/GaAs heterojunction p-n diodes

    SciTech Connect (OSTI)

    Gehring, Pascal; Urcuyo, Roberto; Duong, Dinh Loc; Burghard, Marko; Kern, Klaus

    2015-06-08

    Owing to its high carrier mobility and thickness-tunable direct band gap, black phosphorous emerges as a promising component of optoelectronic devices. Here, we evaluate the device characteristics of p-n heterojunction diodes wherein thin black phosphorous layers are interfaced with an underlying, highly n-doped GaAs substrate. The p-n heterojunctions exhibit close-to-ideal diode behavior at low bias, while under illumination they display a photoresponse that is evenly distributed over the entire junction area, with an external quantum efficiency of up to 10% at zero bias. Moreover, the observed maximum open circuit voltage of 0.6 V is consistent with the band gap estimated for a black phosphorous sheet with a thickness on the order of 10?nm. Further analysis reveals that the device performance is limited by the structural quality of the black phosphorous surface.

  18. Thin-film polycrystalline n-ZnO/p-CuO heterojunction

    SciTech Connect (OSTI)

    Lisitski, O. L.; Kumekov, M. E.; Kumekov, S. E. Terukov, E. I.

    2009-06-15

    Results of X-ray diffraction and spectral-optical studies of n-ZnO and p-CuO films deposited by gas-discharge sputtering with subsequent annealing are presented. It is shown that, despite the difference in the crystal systems, the polycrystallinity of n-ZnO and p-CuO films enables fabrication of a heterojunction from this pair of materials.

  19. Correlating High Power Conversion Efficiency of PTB7:PC71BM Inverted Organic Solar Cells to Nanoscale Structure

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Das, Sanjib; Keum, Jong Kahk; Browning, Jim; Gu, Gong; Yang, Bin; Do, Changwoo; Chen, Wei; Chen, Jihua; Ivanov, Ilia N; Hong, Kunlun; et al

    2015-07-16

    Advances in materials design and device engineering led to inverted organic solar cells (i-OSCs) with superior power conversion efficiencies (PCEs) to their conventional counterparts, in addition to the well-known better ambient stability. Despite the significant progress, however, it has so far been unclear how the morphologies of the photoactive layer and its interface with the cathode modifying layer impact device performance. Here, we report an in-depth morphology study of the i-OSC active and cathode modifying layers, employing a model system with the well-established bulk-heterojunction, PTB7:PC71BM as the active layer and poly-[(9,9-bis(3 -(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) as the cathode surface modifying layer. Wemorehave also identified the role of a processing additive, 1,8-diiodooctane (DIO), used in the spin-casting of the active layer to increase PCE. Using a variety of characterization techniques, we demonstrate that the high PCEs of i-OSCs are due to the smearing (diffusion) of electron-accepting PC71BM into the PFN layer, resulting in improved electron transport. The PC71BM diffusion occurs after spin-casting the active layer onto the PFN layer, when residual solvent molecules act as a plasticizer. The DIO additive, with a higher boiling point than the host solvent, has a longer residence time in the spin-cast active layer, resulting in more PC71BM smearing and therefore more efficient electron transport. This work provides important insight and guidance to further enhancement of i-OSC performance by materials and interface engineering.less

  20. Correlating High Power Conversion Efficiency of PTB7:PC71BM Inverted Organic Solar Cells with Nanoscale Structures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Das, Sanjib; Keum, Jong Kahk; Browning, Jim; Gu, Gong; Yang, Bin; Do, Changwoo; Chen, Wei; Chen, Jihua; Ivanov, Ilia N; Hong, Kunlun; et al

    2015-01-01

    Advances in materials design and device engineering led to inverted organic solar cells (i-OSCs) with superior power conversion efficiencies (PCEs) to their conventional counterparts, in addition to the well-known better ambient stability. Despite the significant progress, however, it has so far been unclear how the morphologies of the photoactive layer and its interface with the cathode modifying layer impact device performance. Here, we report an in-depth morphology study of the i-OSC active and cathode modifying layers, employing a model system with the well-established bulk-heterojunction, PTB7:PC71BM as the active layer and poly-[(9,9-bis(3 -(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) as the cathode surface modifying layer. Wemore » have also identified the role of a processing additive, 1,8-diiodooctane (DIO), used in the spin-casting of the active layer to increase PCE. Using a variety of characterization techniques, we demonstrate that the high PCEs of i-OSCs are due to the smearing (diffusion) of electron-accepting PC71BM into the PFN layer, resulting in improved electron transport. The PC71BM diffusion occurs after spin-casting the active layer onto the PFN layer, when residual solvent molecules act as a plasticizer. The DIO additive, with a higher boiling point than the host solvent, has a longer residence time in the spin-cast active layer, resulting in more PC71BM smearing and therefore more efficient electron transport. This work provides important insight and guidance to further enhancement of i-OSC performance by materials and interface engineering.« less

  1. Nevada Solar One Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Solar One Solar Power Plant Jump to: navigation, search Name Nevada Solar One Solar Power Plant Facility Nevada Solar One Sector Solar Facility Type Concentrating Solar Power...

  2. Mojave Solar Park Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Solar Park Solar Power Plant Jump to: navigation, search Name Mojave Solar Park Solar Power Plant Facility Mojave Solar Park Sector Solar Facility Type Concentrating Solar Power...

  3. Starwood Solar I Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Starwood Solar I Solar Power Plant Jump to: navigation, search Name Starwood Solar I Solar Power Plant Facility Starwood Solar I Sector Solar Facility Type Concentrating Solar...

  4. Solar Power

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Power Solar Power Project Opportunities Abound in the Region The WIPP site is receives abundant solar energy with 6-7 kWh/sq meter power production potential As the accompanying map of New Mexico shows, the WIPP site enjoys abundant year-round sunshine. With an average solar power production potential of 6-7 kWh/sq meter per day, one exciting project being studied for location at WIPP is a 30-50 MW Solar Power Tower: The American Solar Energy Society (ASES) is is a national trade

  5. ImagineSolar | Open Energy Information

    Open Energy Info (EERE)

    Workforce training, Corporate consulting - Solar projects, Solar sales, Solar marketing, Solar business development, Solar policy, Solar advocacy, Solar government...

  6. Solar Manufacturing Projects | Department of Energy

    Office of Environmental Management (EM)

    Solar Manufacturing Projects Solar Manufacturing Projects Solar Manufacturing Projects Solar Manufacturing Projects Solar Manufacturing Projects Solar Manufacturing Projects SOLAR ...

  7. Doped Interlayers for Improved Selectivity in Bulk Herterojunction Organic Photovoltaic Devices

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mauger, Scott A.; Glasser, Melodie P.; Tremolet de Villers, Bertrand J.; Duong, Vincent V.; Ayzner, Alexander L.; Olson, Dana C.

    2016-01-21

    Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is less selective for holes in inverted-architecture organic photovoltaic (OPV) than it is in a conventional-architecture OPV device due differences between the interfacial-PSS concentration at the top and bottom of the PEDOT:PSS layer. In this work, thin layers of polysulfonic acids are inserted between the P3HT:ICBA bulk heterojunction (BHJ) active layer and PEDOT:PSS to create a higher concentration of acid at this interface and, therefore, mimic the distribution of materials present in a conventional device. Upon thermal annealing, this acid layer oxidizes P3HT, creating a thin p-type interlayer of P3HT+/acid- on top of the BHJ. Using x-raymore » absorption spectroscopy, Kelvin probe and ellipsometry measurements, this P3HT+/acid- layer is shown to be insoluble in water, indicating it remains intact during the subsequent deposition of PEDOT:PSS. Current density - voltage measurements show this doped interlayer reduces injected dark current while increasing both open-circuit voltage and fill factor through the creation of a more hole selective BHJ-PEDOT:PSS interface.« less

  8. Wind and Solar Curtailment: Preprint

    SciTech Connect (OSTI)

    Lew, D.; Bird, L.; Milligan, M.; Speer, B.; Wang, X.; Carlini, E. M.; Estanqueiro, A.; Flynn, D.; Gomez-Lazaro, E.; Menemenlis, N.; Orths, A.; Pineda, I.; Smith, J. C.; Soder, L.; Sorensen, P.; Altiparmakis, A.; Yoh, Y.

    2013-09-01

    High penetrations of wind and solar generation on power systems are resulting in increasing curtailment. Wind and solar integration studies predict increased curtailment as penetration levels grow. This paper examines experiences with curtailment on bulk power systems internationally. It discusses how much curtailment is occurring, how it is occurring, why it is occurring, and what is being done to reduce curtailment. This summary is produced as part of the International Energy Agency Wind Task 25 on Design and Operation of Power Systems with Large Amounts of Wind Power.

  9. Solar Rights

    Broader source: Energy.gov [DOE]

    A solar energy system is defined as "a system affixed to a building or buildings that uses solar devices, which are thermally isolated from living space or any other area where the energy is used...

  10. Solar Blog

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    96426 Solar Blog en Solar Energy Jobs Outpace U.S. Economy http:energy.govarticlessolar-energy-jobs-outpace-us-economy

  11. Solar Rights

    Broader source: Energy.gov [DOE]

    Cities and counties in North Carolina generally may not adopt ordinances prohibiting the installation of "a solar collector that gathers solar radiation as a substitute for traditional energy for...

  12. Solar Rights

    Broader source: Energy.gov [DOE]

    In the context of this law, a solar energy device is a system "manufactured and sold for the sole purpose of facilitating the collection and beneficial use of solar energy, including passive...

  13. Solar Forecasting

    Broader source: Energy.gov [DOE]

    On December 7, 2012, DOE announced $8 million to fund two solar projects that are helping utilities and grid operators better forecast when, where, and how much solar power will be produced at U.S....

  14. Imprinting bulk amorphous alloy at room temperature

    SciTech Connect (OSTI)

    Kim, Song-Yi; Park, Eun-Soo; Ott, Ryan T.; Lograsso, Thomas A.; Huh, Moo-Young; Kim, Do-Hyang; Eckert, Jürgen; Lee, Min-Ha

    2015-11-13

    We present investigations on the plastic deformation behavior of a brittle bulk amorphous alloy by simple uniaxial compressive loading at room temperature. A patterning is possible by cold-plastic forming of the typically brittle Hf-based bulk amorphous alloy through controlling homogenous flow without the need for thermal energy or shaping at elevated temperatures. The experimental evidence suggests that there is an inconsistency between macroscopic plasticity and deformability of an amorphous alloy. Moreover, imprinting of specific geometrical features on Cu foil and Zr-based metallic glass is represented by using the patterned bulk amorphous alloy as a die. These results demonstrate the ability of amorphous alloys or metallic glasses to precisely replicate patterning features onto both conventional metals and the other amorphous alloys. In conclusion, our work presents an avenue for avoiding the embrittlement of amorphous alloys associated with thermoplastic forming and yields new insight the forming application of bulk amorphous alloys at room temperature without using heat treatment.

  15. bulk power system | OpenEI Community

    Open Energy Info (EERE)

    Dc(266) Contributor 31 October, 2014 - 10:58 What do you know about the grid? black out brown out bulk power system electricity grid future grid grid history security Smart Grid...

  16. Recent Device Developments with Advanced Bulk Thermoelectric...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and nano-bulk materials with high ZT undertaken by RTI in collaboration with its research partners venkatasubramanian.pdf (1.82 MB) More Documents & Publications Nano-structur...

  17. RAPID/BulkTransmission/Transmission Siting & Interconnection...

    Open Energy Info (EERE)

    federal review). Bulk Transmission Transmission Siting & Interconnection in New Mexico New Mexico Statutes (N.M.S.) 62-9-1, 62-9-3(B), and 62-9-3.2 No Location Permit may be...

  18. Solar synthesis of advanced materials: A solar industrial program initiative

    SciTech Connect (OSTI)

    Lewandowski, A.

    1992-06-01

    This is an initiative for accelerating the use of solar energy in the advanced materials manufacturing industry in the United States. The initiative will be based on government-industry collaborations that will develop the technology and help US industry compete in the rapidly expanding global advanced materials marketplace. Breakthroughs in solar technology over the last 5 years have created exceptional new tools for developing advanced materials. Concentrated sunlight from solar furnaces can produce intensities that approach those on the surface of the sun and can generate temperatures well over 2000{degrees}C. Very thin layers of illuminated surfaces can be driven to remarkably high temperatures in a fraction of a second. Concentrated solar energy can be delivered over large areas, allowing for rapid processing and high production rates. By using this technology, researchers are transforming low-cost raw materials into high-performance products. Solar synthesis of advanced materials uses bulk materials and energy more efficiently, lowers processing costs, and reduces the need for strategic materials -- all with a technology that does not harm the environment. The Solar Industrial Program has built a unique, world class solar furnace at NREL to help meet the growing need for applied research in advanced materials. Many new advanced materials processes have been successfully demonstrated in this facility, including the following: Metalorganic deposition, ceramic powders, diamond-like carbon materials, rapid heat treating, and cladding (hard coating).

  19. Solar collectors

    SciTech Connect (OSTI)

    Cassidy, V.M.

    1981-11-01

    Practical applications of solar energy in commercial, industrial and institutional buildings are considered. Two main types of solar collectors are described: flat plate collectors and concentrating collectors. Efficiency of air and hydronic collectors among the flat plate types are compared. Also several concentrators are described, including their sun tracking mechanisms. Descriptions of some recent solar installations are presented and a list representing the cross section of solar collector manufacturers is furnished.

  20. Overview of Western's Interconnected Bulk Electric System

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Western's Interconnected Bulk Electric System Western Area Power Admin. Objectives * Describe Western Area Power Administration Region and Facilities Overview * Explain Fundamentals of Electricity, Power Transformers and Transmission Lines * Discuss Overview of the Bulk Electric System (BES) * Objectives Review Western's Service Area Western marketing areas and offices 3 Wholesale Power Services * Markets 10,479 MW from 56 Federal hydropower projects owned by Bureau of Reclamation (BOR) , Army

  1. Numerical simulation: Toward the design of high-efficiency planar perovskite solar cells

    SciTech Connect (OSTI)

    Liu, Feng; Zhu, Jun E-mail: sydai@ipp.ac.cn; Wei, Junfeng; Li, Yi; Lv, Mei; Yang, Shangfeng; Zhang, Bing; Yao, Jianxi; Dai, Songyuan E-mail: sydai@ipp.ac.cn

    2014-06-23

    Organo-metal halide perovskite solar cells based on planar architecture have been reported to achieve remarkably high power conversion efficiency (PCE, >16%), rendering them highly competitive to the conventional silicon based solar cells. A thorough understanding of the role of each component in solar cells and their effects as a whole is still required for further improvement in PCE. In this work, the planar heterojunction-based perovskite solar cells were simulated with the program AMPS (analysis of microelectronic and photonic structures)-1D. Simulation results revealed a great dependence of PCE on the thickness and defect density of the perovskite layer. Meanwhile, parameters including the work function of the back contact as well as the hole mobility and acceptor density in hole transport materials were identified to significantly influence the performance of the device. Strikingly, an efficiency over 20% was obtained under the moderate simulation conditions.

  2. Purchasing Solar Collectively with Solarize

    Broader source: Energy.gov [DOE]

    This video provides an overview of the concept behind The Solarize Guidebook, which offers neighborhoods a plan for getting volume discounts when making group purchases of rooftop solar energy...

  3. Methods for improving solar cell open circuit voltage

    DOE Patents [OSTI]

    Jordan, John F.; Singh, Vijay P.

    1979-01-01

    A method for producing a solar cell having an increased open circuit voltage. A layer of cadmium sulfide (CdS) produced by a chemical spray technique and having residual chlorides is exposed to a flow of hydrogen sulfide (H.sub.2 S) heated to a temperature of 400.degree.-600.degree. C. The residual chlorides are reduced and any remaining CdCl.sub.2 is converted to CdS. A heterojunction is formed over the CdS and electrodes are formed. Application of chromium as the positive electrode results in a further increase in the open circuit voltage available from the H.sub.2 S-treated solar cell.

  4. Mechanisms of charge transport in anisotype n-TiO{sub 2}/p-CdTe heterojunctions

    SciTech Connect (OSTI)

    Brus, V. V.; Ilashchuk, M. I.; Kovalyuk, Z. D.; Maryanchuk, P. D.; Ulyanytsky, K. S.; Gritsyuk, B. N.

    2011-08-15

    Surface-barrier anisotype n-TiO{sub 2}/p-CdTe heterojunctions are fabricated by depositing thin titanium-dioxide films on a freshly cleaved surface of single-crystalline cadmium-telluride wafers by reactive magnetron sputtering. It is established that the electric current through the heterojunctions under investigation is formed by generation-recombination processes in the space-charge region via a deep energy level and tunneling through the potential barrier. The depth and nature of the impurity centers involved in the charge transport are determined.

  5. Beacon Solar Energy Project Solar Power Plant | Open Energy Informatio...

    Open Energy Info (EERE)

    Solar Energy Project Solar Power Plant Jump to: navigation, search Name Beacon Solar Energy Project Solar Power Plant Facility Beacon Solar Energy Project Sector Solar Facility...

  6. Prescott Airport Solar Plant Solar Power Plant | Open Energy...

    Open Energy Info (EERE)

    Prescott Airport Solar Plant Solar Power Plant Jump to: navigation, search Name Prescott Airport Solar Plant Solar Power Plant Facility Prescott Airport Solar Plant Sector Solar...

  7. ARM: Baseline Solar Radiation Network (BSRN): solar irradiances...

    Office of Scientific and Technical Information (OSTI)

    Baseline Solar Radiation Network (BSRN): solar irradiances Title: ARM: Baseline Solar Radiation Network (BSRN): solar irradiances Baseline Solar Radiation Network (BSRN): solar ...

  8. Deming Solar Plant Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Deming Solar Plant Solar Power Plant Jump to: navigation, search Name Deming Solar Plant Solar Power Plant Facility Deming Solar Plant Sector Solar Facility Type Photovoltaic...

  9. SES Calico Solar One Project Solar Power Plant | Open Energy...

    Open Energy Info (EERE)

    Calico Solar One Project Solar Power Plant Jump to: navigation, search Name SES Calico Solar One Project Solar Power Plant Facility SES Calico Solar One Project Sector Solar...

  10. Nvision.Solar - Ravnishte Solar PV Plant | Open Energy Information

    Open Energy Info (EERE)

    Solar - Ravnishte Solar PV Plant Jump to: navigation, search Name Nvision.Solar - Ravnishte Solar PV Plant Facility Ravishte roof and facade mounted solar power plant Sector Solar...

  11. Solar Millenium Palen Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Palen Solar Power Plant Jump to: navigation, search Name Solar Millenium Palen Solar Power Plant Facility Solar Millenium Palen Sector Solar Facility Type Concentrating Solar Power...

  12. SES Solar Two Project Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Two Project Solar Power Plant Jump to: navigation, search Name SES Solar Two Project Solar Power Plant Facility SES Solar Two Project Sector Solar Facility Type Concentrating Solar...

  13. Carrizo Energy Solar Farm Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Carrizo Energy Solar Farm Solar Power Plant Jump to: navigation, search Name Carrizo Energy Solar Farm Solar Power Plant Facility Carrizo Energy Solar Farm Sector Solar Facility...

  14. El Dorado Solar Project Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Solar Project Solar Power Plant Jump to: navigation, search Name El Dorado Solar Project Solar Power Plant Facility El Dorado Solar Project Sector Solar Facility Type Photovoltaic...

  15. Solar | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Science & Innovation Energy Sources Renewable Energy Solar Solar How much do you know about solar power? Take our quiz and test your solar energy IQ. | Photo courtesy of ...

  16. Research Program - Center for Solar and Thermal Energy Conversion

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    In the Inorganic PV thrust, we develop nanostructured materials architectures for solar energy conversion by engineering absorption and transport properties not available in the bulk. In particular, we aim to exploit unique quantum effects at the nanoscale which are promising for the realization of new paradigms in solar energy conversion such as intermediate band or hot carrier solar cells. Thrust Leaders: Prof. Rachel Goldman (MSE)&nbspand Prof. Jamie Phillips (EECS) Recent Publications -

  17. ,"Finished Motor Gasoline Refinery, Bulk Terminal, and Natural...

    U.S. Energy Information Administration (EIA) Indexed Site

    AM" "Back to Contents","Data 1: Finished Motor Gasoline Refinery, Bulk Terminal, and ... "Date","U.S. Finished Motor Gasoline Stocks at Refineries, Bulk ...

  18. Design of Bulk Nanocomposites as High Efficiency Thermoelectric...

    Office of Science (SC) Website

    Design of Bulk Nanocomposites as High Efficiency Thermoelectric Materials Energy Frontier ... News & Events Publications History Contact BES Home 04.27.12 Design of Bulk Nanocomposites ...

  19. RAPID/BulkTransmission/General Construction | Open Energy Information

    Open Energy Info (EERE)

    RAPIDBulkTransmissionGeneral Construction < RAPID | BulkTransmission Jump to: navigation, search RAPID Regulatory and Permitting Information Desktop Toolkit BETA About Bulk...

  20. Regulatory Roadmap Workshop for Federal Bulk Transmission Regulations...

    Open Energy Info (EERE)

    for bulk transmission. Date: Tuesday, 29 July, 2014 - 09:30 - 15:30 Location: NREL Education Center Auditorium Golden, Colorado Groups: Federal Bulk Transmission Regulatory...

  1. RAPID/BulkTransmission/Water Use | Open Energy Information

    Open Energy Info (EERE)

    RAPIDBulkTransmissionWater Use < RAPID | BulkTransmission Jump to: navigation, search RAPID Regulatory and Permitting Information Desktop Toolkit BETA About Bulk Transmission...

  2. Lithium Ion Solvation and Diffusion in Bulk Organic Electrolytes...

    Office of Scientific and Technical Information (OSTI)

    in Bulk Organic Electrolytes from First Principles Molecular Dynamics Citation Details In-Document Search Title: Lithium Ion Solvation and Diffusion in Bulk Organic ...

  3. Linux Kernel Co-Scheduling For Bulk Synchronous Parallel Applications...

    Office of Scientific and Technical Information (OSTI)

    Linux Kernel Co-Scheduling For Bulk Synchronous Parallel Applications Citation Details In-Document Search Title: Linux Kernel Co-Scheduling For Bulk Synchronous Parallel ...

  4. Stability analysis of 5D gravitational solutions with N bulk...

    Office of Scientific and Technical Information (OSTI)

    Stability analysis of 5D gravitational solutions with N bulk scalar fields Prev Next Title: Stability analysis of 5D gravitational solutions with N bulk scalar fields ...

  5. RAPID/Overview/BulkTransmission/Siting/Colorado | Open Energy...

    Open Energy Info (EERE)

    Colorado < RAPID | Overview | BulkTransmission | Siting(Redirected from RAPIDAtlasBulkTransmissionSitingColorado) Redirect page Jump to: navigation, search REDIRECT...

  6. RAPID/BulkTransmission/Land Use | Open Energy Information

    Open Energy Info (EERE)

    RAPIDBulkTransmissionLand Use < RAPID | BulkTransmission Jump to: navigation, search RAPID Regulatory and Permitting Information Desktop Toolkit BETA About Bulk Transmission...

  7. RAPID/BulkTransmission/Power Plant | Open Energy Information

    Open Energy Info (EERE)

    RAPIDBulkTransmissionPower Plant < RAPID | BulkTransmission Jump to: navigation, search RAPID Regulatory and Permitting Information Desktop Toolkit BETA About Bulk...

  8. Bulk-memory processor for data acquisition

    SciTech Connect (OSTI)

    Nelson, R.O.; McMillan, D.E.; Sunier, J.W.; Meier, M.; Poore, R.V.

    1981-01-01

    To meet the diverse needs and data rate requirements at the Van de Graaff and Weapons Neutron Research (WNR) facilities, a bulk memory system has been implemented which includes a fast and flexible processor. This bulk memory processor (BMP) utilizes bit slice and microcode techniques and features a 24 bit wide internal architecture allowing direct addressing of up to 16 megawords of memory and histogramming up to 16 million counts per channel without overflow. The BMP is interfaced to the MOSTEK MK 8000 bulk memory system and to the standard MODCOMP computer I/O bus. Coding for the BMP both at the microcode level and with macro instructions is supported. The generalized data acquisition system has been extended to support the BMP in a manner transparent to the user.

  9. Orchestrating Bulk Data Movement in Grid Environments

    SciTech Connect (OSTI)

    Vazhkudai, SS

    2005-01-25

    Data Grids provide a convenient environment for researchers to manage and access massively distributed bulk data by addressing several system and transfer challenges inherent to these environments. This work addresses issues involved in the efficient selection and access of replicated data in Grid environments in the context of the Globus Toolkit{trademark}, building middleware that (1) selects datasets in highly replicated environments, enabling efficient scheduling of data transfer requests; (2) predicts transfer times of bulk wide-area data transfers using extensive statistical analysis; and (3) co-allocates bulk data transfer requests, enabling parallel downloads from mirrored sites. These efforts have demonstrated a decentralized data scheduling architecture, a set of forecasting tools that predict bandwidth availability within 15% error and co-allocation architecture, and heuristics that expedites data downloads by up to 2 times.

  10. Micro benchtop optics by bulk silicon micromachining

    DOE Patents [OSTI]

    Lee, Abraham P.; Pocha, Michael D.; McConaghy, Charles F.; Deri, Robert J.

    2000-01-01

    Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

  11. Correlating High Power Conversion Efficiency of PTB7:PC71BM Inverted Organic Solar Cells with Nanoscale Structures

    SciTech Connect (OSTI)

    Das, Sanjib; Keum, Jong Kahk; Browning, Jim; Gu, Gong; Yang, Bin; Do, Changwoo; Chen, Wei; Chen, Jihua; Ivanov, Ilia N; Hong, Kunlun; Rondinone, Adam J.; Joshi, Pooran C.; Geohegan, David B.; Xiao, Kai

    2015-07-16

    Advances in materials design and device engineering led to inverted organic solar cells (i-OSCs) with superior power conversion efficiencies (PCEs) to their conventional counterparts, in addition to the well-known better ambient stability. Despite the significant progress, however, it has so far been unclear how the morphologies of the photoactive layer and its interface with the cathode modifying layer impact device performance. Here, we report an in-depth morphology study of the i-OSC active and cathode modifying layers, employing a model system with the well-established bulk-heterojunction, PTB7:PC71BM as the active layer and poly-[(9,9-bis(3 -(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) as the cathode surface modifying layer. We have also identified the role of a processing additive, 1,8-diiodooctane (DIO), used in the spin-casting of the active layer to increase PCE. Using a variety of characterization techniques, we demonstrate that the high PCEs of i-OSCs are due to the smearing (diffusion) of electron-accepting PC71BM into the PFN layer, resulting in improved electron transport. The PC71BM diffusion occurs after spin-casting the active layer onto the PFN layer, when residual solvent molecules act as a plasticizer. The DIO additive, with a higher boiling point than the host solvent, has a longer residence time in the spin-cast active layer, resulting in more PC71BM smearing and therefore more efficient electron transport. This work provides important insight and guidance to further enhancement of i-OSC performance by materials and interface engineering.

  12. NREL: Concentrating Solar Power Research - Concentrating Solar...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Concentrating Solar Power Resource Maps These direct-normal solar radiation maps-filtered by solar resource and land availability-identify the most economically suitable lands ...

  13. Solar Newsletter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas ...

  14. Solar Mapper

    Broader source: Energy.gov [DOE]

    Interactive, online mapping tool providing access to spatial data related to siting utility-scale solar facilities in the southwestern United States.

  15. Solar Newsletter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water ...

  16. Solar Newsletter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & ...

  17. Solar Decathlon

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... Administration and DOE EERE International Program: Solar Decathlon China 2013 16 | Building Technologies Office eere.energy.gov Project Integration, Collaboration & Market Impact ...

  18. Solar Rights

    Broader source: Energy.gov [DOE]

    Ordinances, bylaws, or regulations may reasonably restrict the installation and use of solar energy devices to protect public health and safety, buildings from damage, historic/aesthetic values (...

  19. A stereoscopic look into the bulk

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Czech, Bartlomiej; Lamprou, Lampros; McCandlish, Samuel; Mosk, Benjamin; Sully, James

    2016-07-26

    Here, we present the foundation for a holographic dictionary with depth perception. The dictionary consists of natural CFT operators whose duals are simple, diffeomorphisminvariant bulk operators. The CFT operators of interest are the “OPE blocks,” contributions to the OPE from a single conformal family. In holographic theories, we show that the OPE blocks are dual at leading order in 1/N to integrals of effective bulk fields along geodesics or homogeneous minimal surfaces in anti-de Sitter space. One widely studied example of an OPE block is the modular Hamiltonian, which is dual to the fluctuation in the area of a minimalmore » surface. Thus, our operators pave the way for generalizing the Ryu-Takayanagi relation to other bulk fields. Although the OPE blocks are non-local operators in the CFT, they admit a simple geometric description as fields in kinematic space — the space of pairs of CFT points. We develop the tools for constructing local bulk operators in terms of these non-local objects. The OPE blocks also allow for conceptually clean and technically simple derivations of many results known in the literature, including linearized Einstein’s equations and the relation between conformal blocks and geodesic Witten diagrams.« less

  20. Imprinting bulk amorphous alloy at room temperature

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kim, Song-Yi; Park, Eun-Soo; Ott, Ryan T.; Lograsso, Thomas A.; Huh, Moo-Young; Kim, Do-Hyang; Eckert, Jürgen; Lee, Min-Ha

    2015-11-13

    We present investigations on the plastic deformation behavior of a brittle bulk amorphous alloy by simple uniaxial compressive loading at room temperature. A patterning is possible by cold-plastic forming of the typically brittle Hf-based bulk amorphous alloy through controlling homogenous flow without the need for thermal energy or shaping at elevated temperatures. The experimental evidence suggests that there is an inconsistency between macroscopic plasticity and deformability of an amorphous alloy. Moreover, imprinting of specific geometrical features on Cu foil and Zr-based metallic glass is represented by using the patterned bulk amorphous alloy as a die. These results demonstrate the abilitymore » of amorphous alloys or metallic glasses to precisely replicate patterning features onto both conventional metals and the other amorphous alloys. In conclusion, our work presents an avenue for avoiding the embrittlement of amorphous alloys associated with thermoplastic forming and yields new insight the forming application of bulk amorphous alloys at room temperature without using heat treatment.« less

  1. Critical role of domain crystallinity, domain purity and domain interface sharpness for reduced bimolecular recombination in polymer solar cells

    SciTech Connect (OSTI)

    Venkatesan, Swaminathan; Chen, Jihua; Ngo, Evan C.; Dubey, Ashish; Khatiwada, Devendra; Zhang, Cheng; Qiao, Qiquan

    2014-12-31

    In this study, inverted bulk heterojunction solar cells were fabricated using poly(3-hexylthiophene) (P3HT) blended with two different fullerene derivatives namely phenyl-C61-butyric acid methyl ester (PC60BM) and indene-C60 bis-adduct (IC60BA). The effects of annealing temperatures on the morphology, optical and structural properties were studied and correlated to differences in photovoltaic device performance. It was observed that annealing temperature significantly improved the performance of P3HT:IC60BA solar cells while P3HT:PC60BM cells showed relatively less improvement. The performance improvement is attributed to the extent of fullerene mixing with polymer domains. Energy filtered transmission electron microscopy (EFTEM) and x-ray diffraction (XRD) results showed that ICBA mixes with disordered P3HT much more readily than PC60BM which leads to lower short circuit current density and fill factor for P3HT:IC60BA cells annealed below 120°C. Annealing above 120°C improves the crystallinity of P3HT in case of P3HT:IC60BA whereas in P3HT:PC60BM films, annealing above 80°C leads to negligible change in crystallinity. Crystallization of P3HT also leads to higher domain purity as seen EFTEM. Further it is seen that cells processed with additive nitrobenzene (NB) showed enhanced short circuit current density and power conversion efficiency regardless of the fullerene derivative used. Addition of NB led to nanoscale phase separation between purer polymer and fullerene domains. Kelvin probe force microscopy (KPFM) images showed that enhanced domain purity in additive casted films led to a sharper interface between polymer and fullerene. Lastly, enhanced domain purity and interfacial sharpness led to lower bimolecular recombination and higher mobility and charge carrier lifetime in NB modified devices.

  2. Intrinsic slow charge response in the perovskite solar cells: Electron and ion transport

    SciTech Connect (OSTI)

    Shi, Jiangjian; Xu, Xin; Zhang, Huiyin; Luo, Yanhong; Li, Dongmei; Meng, Qingbo

    2015-10-19

    The intrinsic charge response and hysteresis characteristic in the perovskite solar cell has been investigated by an electrically modulated transient photocurrent technology. An ultraslow charge response process in the timescale of seconds is observed, which can be well explained by the ion migration in the perovskite CH{sub 3}NH{sub 3}PbI{sub 3} film driven by multiple electric fields derived from the heterojunction depletion charge, the external modulation, and the accumulated ion charge. Furthermore, theoretical calculation of charge transport reveals that the hysteresis behavior is also significantly influenced by the interfacial charge extraction velocity and the carrier transport properties inside the cell.

  3. Unified Solar

    Broader source: Energy.gov [DOE]

    Unified Solar is an MIT startup that is commercializing an integrated circuit solution that eliminates most of the adverse effects caused by partial shading in photovoltaic power systems. With its patent-pending design, Unified Solar's solution is smaller, cheaper and more powerful than any competing power optimizer in the market.

  4. Boston, Massachusetts: Solar in Action (Brochure)

    SciTech Connect (OSTI)

    Not Available

    2011-10-01

    This brochure provides an overview of the challenges and successes of Boston, MA, a 2007 Solar America City awardee, on the path toward becoming a solar-powered community. Accomplishments, case studies, key lessons learned, and local resource information are given. The City of Boston and its Solar America Cities program, Solar Boston, are helping to debunk the myth that solar energy is only feasible in the southern latitudes. Boston has some of the highest energy prices in the country and will likely be one of the first locations where solar power achieves grid parity with conventional energy technologies. Solar Boston is facilitating the rapid development of solar energy projects and infrastructure in the short-term, and is preparing for the rapid market growth that is expected with the imminent arrival of grid parity over the long-term. Solar Boston developed the strategy for achieving Mayor Menino's goal of installing 25 MW of solar energy throughout Boston by 2015. Through Solar Boston, the city has developed a strategy for the installation of solar technology throughout Boston, including mapping feasible locations, preparing a permitting guide, and planning the citywide bulk purchase, financing, and installation of solar technology. The city has also worked with local organizations to maximize Boston's participation in state incentive programs and innovative financing initiatives. The resulting accomplishments include the following: (1) Created an online map of current local renewable energy projects with a tool to allow building owners to calculate their rooftop solar potential. The map is currently live at http://gis.cityofboston.gov/solarboston/. (2) Supported the city's Green Affordable Housing Program (GAHP), in partnership with the Department of Neighborhood Development (DND). Under GAHP, the city is installing more than 150 kW of PV on 200 units of affordable housing. DND requires that all new city-funded affordable housing be LEED silver certified and

  5. STATIONARITY IN SOLAR WIND FLOWS

    SciTech Connect (OSTI)

    Perri, S.; Balogh, A. E-mail: a.balogh@imperial.ac.u

    2010-05-01

    By using single-point measurements in space physics it is possible to study a phenomenon only as a function of time. This means that we cannot have direct access to information about spatial variations of a measured quantity. However, the investigation of the properties of turbulence and of related phenomena in the solar wind widely makes use of an approximation frequently adopted in hydrodynamics under certain conditions, the so-called Taylor hypothesis; indeed, the solar wind flow has a bulk velocity along the radial direction which is much higher than the velocity of a single turbulent eddy embedded in the main flow. This implies that the time of evolution of the turbulent features is longer than the transit time of the flow through the spacecraft position, so that the turbulent field can be considered frozen into the solar wind flow. This assumption allows one to easily associate time variations with spatial variations and stationarity to homogeneity. We have investigated, applying criteria for weak stationarity to Ulysses magnetic field data in different solar wind regimes, at which timescale and under which conditions the hypothesis of stationarity, and then of homogeneity, of turbulence in the solar wind is well justified. We extend the conclusions of previous studies by Matthaeus and Goldstein to different parameter ranges in the solar wind. We conclude that the stationarity assumption in the inertial range of turbulence on timescales of 10 minutes to 1 day is reasonably satisfied in fast and uniform solar wind flows, but that in mixed, interacting fast, and slow solar wind streams the assumption is frequently only marginally valid.

  6. New concepts for high efficiency energy conversion: The avalanche heterostructure and superlattice solar cells

    SciTech Connect (OSTI)

    Summers, C.J.; Rohatgi, A.; Torabi, A.; Harris, H.M. )

    1993-01-01

    This report describes investigation into the theory and technology of a novel heterojunction or superlattice, single-junction solar cell, which injects electrons across the heterointerface to produce highly efficient impact ionization of carriers in the lowband-gap side of the junction, thereby conserving their total energy. Also, the superlattice structure has the advantage of relaxing the need for perfect lattice matching at the p-n interface and will inhibit the cross diffusion of dopant atoms that typically occurs in heavy doping. This structure avoids the use of tunnel junctions that make it very difficult to achieve the predicted efficiencies in cascade cells, thus making it possible to obtain energy efficiencies that are competitive with those predicted for cascade solar cells with reduced complexity and cost. This cell structure could also be incorporated into other solar cell structures designed for wider spectral coverage.

  7. Thin-Film Solar Cell Fabricated on a Flexible Metallic Substrate

    DOE Patents [OSTI]

    Tuttle, J. R.; Noufi, R.; Hasoon, F. S.

    2006-05-30

    A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

  8. Thin-film solar cell fabricated on a flexible metallic substrate

    DOE Patents [OSTI]

    Tuttle, John R.; Noufi, Rommel; Hasoon, Falah S.

    2006-05-30

    A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

  9. Development of Highly-Efficient GaInP/Si Tandem Solar Cells

    SciTech Connect (OSTI)

    Essig, Stephanie; Geisz, John F.; Steiner, Myles A.; Merkle, Agnes; Peibst, Robby; Schmidt, Jan; Brendel, Rolf; Ward, Scott; Friedman, Daniel J.; Stradins, Paul; Young, David L.

    2015-06-14

    Dual-junction solar cells consisting of rear-heterojunction GaInP top cells and back-junction, back-contacted crystalline Si bottom cells were fabricated and characterized. Our calculations show that theoretical efficiencies up to 38.9% can be achieved with Si-based tandem devices. In our experiments, the two subcells were fabricated separately and stacked with an index matching fluid. In contrast to conventional mechanically stacked solar cells, that contain two metal grids at the interface, our concept includes a fully back contacted bottom cell which reduces the shadow losses in the device. A 1-sun AM1.5g cumulative efficiency of (26.2 +/- 0.6)% has been achieved with this novel GaInP/Si 4-terminal tandem solar cell.

  10. Sandia Energy - Solar Resource Assessment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Resource Assessment Home Stationary Power Energy Conversion Efficiency Solar Energy Photovoltaics Solar Resource Assessment Solar Resource AssessmentTara...

  11. Sandia Energy - Solar Market Transformation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Market Transformation Home Stationary Power Energy Conversion Efficiency Solar Energy Photovoltaics Solar Market Transformation Solar Market TransformationTara...

  12. Control of morphology and function of low band gap polymer bis-fullerene mixed heterojunctions in organic photovoltaics with selective solvent vapor annealing.

    SciTech Connect (OSTI)

    Chen, Huipeng; Hsiao, Yu-Che; Dadmun, Mark D

    2014-01-01

    Replacing PCBM with a bis-adduct fullerene (i.e. ICBA) has been reported to significantly improve the open circuit voltage (VOC) and power conversion efficiency (PCE) in P3HT bulk heterojunctions. However, for the most promising low band-gap polymer (LBP) systems, replacing PCBM with ICBA results in very poor shortcircuit current (JSC) and PCE although the VOC is significantly improved. Therefore, in this work, we have completed small angle neutron scattering and neutron reflectometry experiments to study the impact of post-deposition solvent annealing (SA) with control of solvent quality on the morphology and performance of LBP bis-fullerene BHJ photovoltaics. The results show that SA in a solvent that is selective for the LBP results in a depletion of bis-fullerene near the air surface, which limits device performance. SA in a solvent vapor which has similar solubility for polymer and bis-fullerene results in a higher degree of polymer ordering, bis-fullerene phase separation, and segregation of the bis-fullerene to the air surface, which facilitates charge transport and increases power conversion efficiency (PCE) by 100%. The highest degree of polymer ordering combined with significant bis-fullerene phase separation and segregation of bis-fullerene to the air surface is obtained by SA in a solvent vapor that is selective for the bis-fullerene. The resultant morphology increases PCE by 190%. These results indicate that solvent annealing with judicious solvent choice provides a unique tool to tune the morphology of LBP bisfullerene BHJ system, providing sufficient polymer ordering, formation of a bis-fullerene pure phase, and segregation of bis-fullerene to the air surface to optimize the morphology of the active layer. Moreover, this process is broadly applicable to improving current disappointing LBP bis-fullerene systems to optimize their morphology and OPV performance post-deposition, including higher VOC and power conversion efficiency.

  13. Control of morphology and function of low band gap polymer-bis-fullerene mixed heterojunctions in organic photovoltaics with selection solvent vapor annealing

    SciTech Connect (OSTI)

    Chen, Huipeng; Hsiao, Yu-Che; Hu, Bin; Dadmun, Mark D

    2014-01-01

    Replacing PCBM with a bis-adduct fullerene (i.e. ICBA) has been reported to significantly improve the open circuit voltage (VOC) and power conversion efficiency (PCE) in P3HT bulk heterojunctions. However, for the most promising low band-gap polymer (LBP) systems, replacing PCBM with ICBA results in very poor shortcircuit current (JSC) and PCE although the VOC is significantly improved. Therefore, in this work, we have completed small angle neutron scattering and neutron reflectometry experiments to study the impact of post-deposition solvent annealing (SA) with control of solvent quality on the morphology and performance of LBP bis-fullerene BHJ photovoltaics. The results show that SA in a solvent that is selective for the LBP results in a depletion of bis-fullerene near the air surface, which limits device performance. SA in a solvent vapor which has similar solubility for polymer and bis-fullerene results in a higher degree of polymer ordering, bis-fullerene phase separation, and segregation of the bis-fullerene to the air surface, which facilitates charge transport and increases power conversion efficiency (PCE) by 100%. The highest degree of polymer ordering combined with significant bis-fullerene phase separation and segregation of bis-fullerene to the air surface is obtained by SA in a solvent vapor that is selective for the bis-fullerene. The resultant morphology increases PCE by 190%. These results indicate that solvent annealing with judicious solvent choice provides a unique tool to tune the morphology of LBP bisfullerene BHJ system, providing sufficient polymer ordering, formation of a bis-fullerene pure phase, and segregation of bis-fullerene to the air surface to optimize the morphology of the active layer. Moreover, this process is broadly applicable to improving current disappointing LBP bis-fullerene systems to optimize their morphology and OPV performance post-deposition, including higher VOC and power conversion efficiency.

  14. Modeling direct interband tunneling. I. Bulk semiconductors

    SciTech Connect (OSTI)

    Pan, Andrew; Chui, Chi On

    2014-08-07

    Interband tunneling is frequently studied using the semiclassical Kane model, despite uncertainty about its validity. Revisiting the physical basis of this formula, we find that it neglects coupling to other bands and underestimates transverse tunneling. As a result, significant errors can arise at low and high fields for small and large gap materials, respectively. We derive a simple multiband tunneling model to correct these defects analytically without arbitrary parameters. Through extensive comparison with band structure and quantum transport calculations for bulk InGaAs, InAs, and InSb, we probe the accuracy of the Kane and multiband formulas and establish the superiority of the latter. We also show that the nonlocal average electric field should be used when applying either of these models to nonuniform potentials. Our findings are important for efficient analysis and simulation of bulk semiconductor devices involving tunneling.

  15. Microfabricated bulk wave acoustic bandgap device

    DOE Patents [OSTI]

    Olsson, Roy H.; El-Kady, Ihab F.; McCormick, Frederick; Fleming, James G.; Fleming, legal representative, Carol

    2010-11-23

    A microfabricated bulk wave acoustic bandgap device comprises a periodic two-dimensional array of scatterers embedded within the matrix material membrane, wherein the scatterer material has a density and/or elastic constant that is different than the matrix material and wherein the periodicity of the array causes destructive interference of the acoustic wave within an acoustic bandgap. The membrane can be suspended above a substrate by an air or vacuum gap to provide acoustic isolation from the substrate. The device can be fabricated using microelectromechanical systems (MEMS) technologies. Such microfabricated bulk wave phononic bandgap devices are useful for acoustic isolation in the ultrasonic, VHF, or UHF regime (i.e., frequencies of order 1 MHz to 10 GHz and higher, and lattice constants of order 100 .mu.m or less).

  16. Microfabricated bulk wave acoustic bandgap device

    DOE Patents [OSTI]

    Olsson, Roy H.; El-Kady, Ihab F.; McCormick, Frederick; Fleming, James G.; Fleming, Carol

    2010-06-08

    A microfabricated bulk wave acoustic bandgap device comprises a periodic two-dimensional array of scatterers embedded within the matrix material membrane, wherein the scatterer material has a density and/or elastic constant that is different than the matrix material and wherein the periodicity of the array causes destructive interference of the acoustic wave within an acoustic bandgap. The membrane can be suspended above a substrate by an air or vacuum gap to provide acoustic isolation from the substrate. The device can be fabricated using microelectromechanical systems (MEMS) technologies. Such microfabricated bulk wave phononic bandgap devices are useful for acoustic isolation in the ultrasonic, VHF, or UHF regime (i.e., frequencies of order 1 MHz to 10 GHz and higher, and lattice constants of order 100 .mu.m or less).

  17. Structural rejuvenation in bulk metallic glasses

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Tong, Yang; Iwashita, T.; Dmowski, Wojciech; Bei, Hongbin; Yokoyama, Y.; Egami, Takeshi

    2015-01-05

    Using high-energy X-ray diffraction we study structural changes in bulk metallic glasses after uniaxial compressive homogeneous deformation at temperatures slightly below the glass transition. We observe that deformation results in structural disordering corresponding to an increase in the fictive, or effective, temperature. However, the structural disordering saturates after yielding. Lastly, examination of the experimental structure and molecular dynamics simulation suggests that local changes in the atomic connectivity network are the main driving force of the structural rejuvenation.

  18. DEMONSTRATION BULK VITRIFICATION SYSTEM (DBVS) EXTERNAL REVIEW

    SciTech Connect (OSTI)

    HONEYMAN, J.O.

    2007-02-08

    The Hanford mission to retrieve and immobilize 53 million gallons of radioactive waste from 177 underground storage tanks will be accomplished using a combination of processing by the waste treatment plant currently under construction, and a supplemental treatment that would process low-activity waste. Under consideration for this treatment is bulk vitrification, a versatile joule-heated melter technology which could be deployed in the tank farms. The Department proposes to demonstrate this technology under a Research, Development and Demonstration (RD and D) permit issued by the Washington State Department of Ecology using both non-radioactive simulant and blends of actual tank waste. From the demonstration program, data would be obtained on cost and technical performance to enable a decision on the potential use of bulk vitrification as the supplemental treatment technology for Hanford. An independent review by sixteen subject matter experts was conducted to assure that the technical basis of the demonstration facility design would be adequate to meet the objectives of the Demonstration Bulk Vitrification System (DBVS) program. This review explored all aspects of the program, including flowsheet chemistry, project risk, vitrification, equipment design and nuclear safety, and was carried out at a time when issues can be identified and corrected. This paper describes the mission need, review approach, technical recommendations and follow-on activities for the DBVS program.

  19. Hydrogen isotope separation utilizing bulk getters

    DOE Patents [OSTI]

    Knize, Randall J. (Los Angeles, CA); Cecchi, Joseph L. (Lawrenceville, NJ)

    1990-01-01

    Tritium and deuterium are separated from a gaseous mixture thereof, derived from a nuclear fusion reactor or some other source, by providing a casing with a bulk getter therein for absorbing the gaseous mixture to produce an initial loading of the getter, partially desorbing the getter to produce a desorbed mixture which is tritium-enriched, pumping the desorbed mixture into a separate container, the remaining gaseous loading in the getter being deuterium-enriched, desorbing the getter to a substantially greater extent to produce a deuterium-enriched gaseous mixture, and removing the deuterium-enriched mixture into another container. The bulk getter may comprise a zirconium-aluminum alloy, or a zirconium-vanadium-iron alloy. The partial desorption may reduce the loading by approximately fifty percent. The basic procedure may be extended to produce a multistage isotope separator, including at least one additional bulk getter into which the tritium-enriched mixture is absorbed. The second getter is then partially desorbed to produce a desorbed mixture which is further tritium-enriched. The last-mentioned mixture is then removed from the container for the second getter, which is then desorbed to a substantially greater extent to produce a desorbed mixture which is deuterium-enriched. The last-mentioned mixture is then removed so that the cycle can be continued and repeated. The method of isotope separation is also applicable to other hydrogen isotopes, in that the method can be employed for separating either deuterium or tritium from normal hydrogen.

  20. Hydrogen isotope separation utilizing bulk getters

    DOE Patents [OSTI]

    Knize, Randall J. (Los Angeles, CA); Cecchi, Joseph L. (Lawrenceville, NJ)

    1991-01-01

    Tritium and deuterium are separated from a gaseous mixture thereof, derived from a nuclear fusion reactor or some other source, by providing a casing with a bulk getter therein for absorbing the gaseous mixture to produce an initial loading of the getter, partially desorbing the getter to produce a desorbed mixture which is tritium-enriched, pumping the desorbed mixture into a separate container, the remaining gaseous loading in the getter being deuterium-enriched, desorbing the getter to a substantially greater extent to produce a deuterium-enriched gaseous mixture, and removing the deuterium-enriched mixture into another container. The bulk getter may comprise a zirconium-aluminum alloy, or a zirconium-vanadium-iron alloy. The partial desorption may reduce the loading by approximately fifty percent. The basic procedure may be extended to produce a multistage isotope separator, including at least one additional bulk getter into which the tritium-enriched mixture is absorbed. The second getter is then partially desorbed to produce a desorbed mixture which is further tritium-enriched. The last-mentioned mixture is then removed from the container for the second getter, which is then desorbed to a substantially greater extent to produce a desorbed mixture which is deuterium-enriched. The last-mentioned mixture is then removed so that the cycle can be continued and repeated. The method of isotope separation is also applicable to other hydrogen isotopes, in that the method can be employed for separating either deuterium or tritium from normal hydrogen.

  1. Hydrogen isotope separation utilizing bulk getters

    DOE Patents [OSTI]

    Knize, R.J.; Cecchi, J.L.

    1991-08-20

    Tritium and deuterium are separated from a gaseous mixture thereof, derived from a nuclear fusion reactor or some other source, by providing a casing with a bulk getter therein for absorbing the gaseous mixture to produce an initial loading of the getter, partially desorbing the getter to produce a desorbed mixture which is tritium-enriched, pumping the desorbed mixture into a separate container, the remaining gaseous loading in the getter being deuterium-enriched, desorbing the getter to a substantially greater extent to produce a deuterium-enriched gaseous mixture, and removing the deuterium-enriched mixture into another container. The bulk getter may comprise a zirconium-aluminum alloy, or a zirconium-vanadium-iron alloy. The partial desorption may reduce the loading by approximately fifty percent. The basic procedure may be extended to produce a multistage isotope separator, including at least one additional bulk getter into which the tritium-enriched mixture is absorbed. The second getter is then partially desorbed to produce a desorbed mixture which is further tritium-enriched. The last-mentioned mixture is then removed from the container for the second getter, which is then desorbed to a substantially greater extent to produce a desorbed mixture which is deuterium-enriched. The last-mentioned mixture is then removed so that the cycle can be continued and repeated. The method of isotope separation is also applicable to other hydrogen isotopes, in that the method can be employed for separating either deuterium or tritium from normal hydrogen. 4 figures.

  2. Solar Two

    SciTech Connect (OSTI)

    Not Available

    1998-04-01

    Solar Two is a concentrating solar power plant that can supply electric power on demand to the local utility, Southern California Edison Company. It can do so because it operates not only during sunny parts of the day, but it can store enough thermal energy from the sun to operate during cloudy periods and after dark, for up to three hours, at its rated output of 10 megawatts (MW). For the first time ever, a utility scale solar power plant can supply electricity when the utility needs it most, to satisfy the energy requirements of its customers.

  3. Solar Millenium Ridgecrest Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Ridgecrest Solar Power Plant Jump to: navigation, search Name Solar Millenium Ridgecrest Solar Power Plant Facility Solar Millenium Ridgecrest Sector Solar Facility Type...

  4. SES Solar Three Project Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Three Project Solar Power Plant Jump to: navigation, search Name SES Solar Three Project Solar Power Plant Facility SES Solar Three Project Sector Solar Facility Type Photovoltaics...

  5. Renewable Energy Concepts Solar Inc REC Solar | Open Energy Informatio...

    Open Energy Info (EERE)

    Concepts Solar Inc REC Solar Jump to: navigation, search Name: Renewable Energy Concepts Solar Inc (REC Solar) Place: San Luis Obispo, California Zip: 93401 Sector: Solar Product:...

  6. Quantum wells on 3C-SiC/NH-SiC heterojunctions. Calculation of spontaneous polarization and electric field strength in experiments

    SciTech Connect (OSTI)

    Sbruev, I. S.; Sbruev, S. B.

    2010-10-15

    The results of experiments with quantum wells on 3C-SiC/4H-SiC and 3C-SiC/6H-SiC heterojunctions obtained by various methods are reconsidered. Spontaneous polarizations, field strengths, and energies of local levels in quantum wells on 3C-SiC/NH-SiC heterojunctions were calculated within a unified model. The values obtained are in agreement with the results of all considered experiments. Heterojunction types are determined. Approximations for valence band offsets on heterojunctions between silicon carbide polytypes and the expression for calculating local levels in quantum wells on the 3C-SiC/NH-SiC heterojunction are presented. The spontaneous polarizations and field strengths induced by spontaneous polarization on 3C-SiC/4H-SiC and 3C-SiC/6H-SiC heterojunctions were calculated as 0.71 and 0.47 C/m{sup 2} and 0.825 and 0.55 MV/cm, respectively.

  7. Photocurrent enhancement of perovskite heterojunction by plasmonic nanoparticles and ferroelectric polarization

    SciTech Connect (OSTI)

    Shieh, J. Chen, S. W.; Fang, C. Y.; Chen, C. H.

    2014-02-17

    Perovskite oxidesPb{sub 0.86}La{sub 0.14}TiO{sub 3} (PLT), AgNbO{sub 3} (ANO), and SrTiO{sub 3} (STO)were deposited consecutively on ITO/glass substrates to form layered composite photoelectrodes. These materials were chosen for their specific electronic band structures to form efficient photocatalytic heterojunctions and similar crystalline structures to minimize interface defects. Two additional methods were adopted to increase the photocurrent density of the composites: (1) plasmonic gold nanoparticles were introduced at the PLT/ITO interface to enhance light scattering and absorption while not becoming electron trapping centers and (2) the ferroelectric PLT layer was electrically poled toward the ANO layer to create a favorable band bending for electron transfer.

  8. Thin film heterojunction photovoltaic cells and methods of making the same

    DOE Patents [OSTI]

    Basol, Bulent M.; Tseng, Eric S.; Rod, Robert L.

    1983-06-14

    A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of Class II B of the Periodic Table of Elements and at least tellurium and then heating said film at a temperature between about 250.degree. C. and 500.degree. C. for a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively, there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The resulting photovoltaic cell exhibits a substantially increased power output over similar cells not subjected to the method of the present invention.

  9. Time-dependent behavior of a localized electron at a heterojunction boundary of graphene

    SciTech Connect (OSTI)

    Jang, Min S.; Kim, Hyungjun; Atwater, Harry A.; Goddard, William A.

    2010-01-01

    We develop a finite-difference time-domain(FDTD) method for simulating the dynamics of graphene electrons, denoted GraFDTD. We then use GraFDTD to study the temporal behavior of a single localized electron wave packet, showing that it exhibits optical-like dynamics including the Goos–Hänchen effect [F. Goos and H. Hänchen, Ann. Phys.436, 333 (1947)] at a heterojunction, but the behavior is quantitatively different than for electromagnetic waves. This suggests issues that must be addressed in designing graphene-based electronic devices analogous to optical devices. GraFDTD should be useful for studying such complex time-dependent behavior of a quasiparticle in graphene.

  10. CdS/PbSe heterojunction for high temperature mid-infrared photovoltaic detector applications

    SciTech Connect (OSTI)

    Weng, Binbin E-mail: shi@ou.edu; Qiu, Jijun; Zhao, Lihua; Chang, Caleb; Shi, Zhisheng E-mail: shi@ou.edu

    2014-03-24

    n-CdS/p-PbSe heterojunction is investigated. A thin CdS film is deposited by chemical bath deposition on top of epitaxial PbSe film by molecular beam epitaxy on Silicon. Current-voltage measurements demonstrate very good junction characteristics with rectifying ratio of ∼178 and ideality factor of 1.79 at 300 K. Detectors made with such structure exhibit mid-infrared spectral photoresponse at room temperature. The peak responsivity R{sub λ} and specific detectivity D{sup *} are 0.055 A/W and 5.482 × 10{sup 8} cm·Hz{sup 1/2}/W at λ = 4.7 μm under zero-bias photovoltaic mode. Temperature-dependent photoresponse measurements show abnormal intensity variation below ∼200 K. Possible reasons for this phenomenon are also discussed.

  11. Solar Rights

    Broader source: Energy.gov [DOE]

    In June of 2015, SB 1626 was signed into law. It provides that during the development period, the developer may only prohibit  a property owner from installing solar in developments with 50 or...

  12. solar energy

    National Nuclear Security Administration (NNSA)

    8%2A en Solar power purchase for DOE laboratories http:nnsa.energy.govmediaroompressreleasessolarpower

  13. solar power

    National Nuclear Security Administration (NNSA)

    9%2A en Solar power purchase for DOE laboratories http:nnsa.energy.govmediaroompressreleasessolarpower

  14. Solar interior and atmosphere

    SciTech Connect (OSTI)

    Cox, A.N.; Livingston, W.C.; Matthews, M.S. National Solar Observatory, Tucson, AZ )

    1991-01-01

    The present work discusses nuclear energy generation in the solar interior, solar neutrino experiments, solar premain-sequence evolution, the computation of standard solar models, radiative-zone mixing, solar element separation by atomic diffusion, the observation and theory of solar oscillations, the solar internal rotation and magnetism implications of oscillations, solar gravity modes, and solar oscillation-mode excitation. Also discussed are the solar spectrum, the role of the solar photosphere and a radiative boundary, high spatial-resolution techniques for solar study, high-resolution observations of the solar granulation, large-scale velocity fields, the solar activity cycle, the magnetic fields of active regions and sunspots, the physics of flux tubes and filigrees, the heating of the solar chromosphere, the fine structure of the solar transition region, coronal activity, the coronal origins of the solar winds, and postmain sequence solar evolution.

  15. Oxford Solar | Open Energy Information

    Open Energy Info (EERE)

    Oxford Solar Jump to: navigation, search Name: Oxford Solar Place: Randolph, New Jersey Zip: 7869 Sector: Solar Product: Oxford Solar provides solar energy consulting and...

  16. SBM Solar | Open Energy Information

    Open Energy Info (EERE)

    search Name: SBM Solar Place: North Carolina Sector: Solar Product: SBM Solar is a solar panel manufacturer based in North Carolina. References: SBM Solar1 This article is...

  17. Akeena Solar | Open Energy Information

    Open Energy Info (EERE)

    Akeena Solar Jump to: navigation, search Logo: Akeena Solar Name: Akeena Solar Address: 16005 Los Gatos Blvd. Place: Los Gatos, California Zip: 95032 Sector: Solar Product: Solar...

  18. Adobe Solar | Open Energy Information

    Open Energy Info (EERE)

    Adobe Solar Jump to: navigation, search Logo: Adobe Solar Name: Adobe Solar Place: Denver, Colorado Region: Rockies Area Sector: Solar Product: solar electric systems Phone Number:...

  19. Climatic Solar | Open Energy Information

    Open Energy Info (EERE)

    Climatic Solar Jump to: navigation, search Logo: Climatic Solar Name: Climatic Solar Address: 650 2nd Lane Place: Vero Beach, Florida Zip: 32962 Sector: Solar Product: solar energy...

  20. Tejas Solares | Open Energy Information

    Open Energy Info (EERE)

    Tejas Solares Jump to: navigation, search Name: Tejas Solares Place: Spain Sector: Solar Product: Tejas Solares is a Spain-based company focused on providing solar solutions for...

  1. Solar Kit Lessons

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Kit Lessons Middle School Curriculum Created by Northeast Sustainable Energy Association (NESEA) Click on the links below to take you to the Chapter heading: Solar Cell Inquiry Sunshine Timer Parts of a Solar Panel Part 1 Parts of a Solar Panel Part 2 Build a Simple Ammeter Solar-Powered Battery Charger Positioning Solar Panels 1 Positioning Solar Panels 2 Properties of Solar Radiation: Reflection, Transmission, and Absorption Properties of Solar Radiation: Direct and Diffuse Light Power

  2. NREL: Solar STAT Blog -

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Outreach Policy Basics Publications Request Assistance Technical Assistance Project Map Solar STAT Blog The Solar STAT blog discusses state and local efforts to develop solar...

  3. Solar Resource Assessment

    Broader source: Energy.gov [DOE]

    DOE solar resource research focuses on understanding historical solar resource patterns and making future predictions, both of which are needed to support reliable power system operation. As solar...

  4. Intrinsic carrier multiplication efficiency in bulk Si crystals...

    Office of Scientific and Technical Information (OSTI)

    We estimated the carrier multiplication efficiency in the most common solar-cell material, ... of carriers quantitatively, which are crucial for the design of the solar cells. ...

  5. Process Optimization for High Efficiency Heterojunction c-Si Solar Cells Fabrication Using Hot-Wire Chemical Vapor Deposition: Preprint

    SciTech Connect (OSTI)

    Ai, Y.; Yuan, H. C.; Page, M.; Nemeth, W.; Roybal, L.; Wang, Q.

    2012-06-01

    The researchers extensively studied the effects of annealing or thermal history of cell process on the minority carrier lifetimes of FZ n-type c-Si wafers with various i-layer thicknesses from 5 to 60 nm, substrate temperatures from 100 to 350 degrees C, doped layers both p- and n-types, and transparent conducting oxide (TCO).

  6. Improving the bulk data transfer experience

    SciTech Connect (OSTI)

    Guok, Chin; Guok, Chin; Lee, Jason R.; Berket, Karlo

    2008-05-07

    Scientific computations and collaborations increasingly rely on the network to provide high-speed data transfer, dissemination of results, access to instruments, support for computational steering, etc. The Energy Sciences Network is establishing a science data network to provide user driven bandwidth allocation. In a shared network environment, some reservations may not be granted due to the lack of available bandwidth on any single path. In many cases, the available bandwidth across multiple paths would be sufficient to grant the reservation. In this paper we investigate how to utilize the available bandwidth across multiple paths in the case of bulk data transfer.

  7. Towards bulk based preconditioning for quantum dotcomputations

    SciTech Connect (OSTI)

    Dongarra, Jack; Langou, Julien; Tomov, Stanimire; Channing,Andrew; Marques, Osni; Vomel, Christof; Wang, Lin-Wang

    2006-05-25

    This article describes how to accelerate the convergence of Preconditioned Conjugate Gradient (PCG) type eigensolvers for the computation of several states around the band gap of colloidal quantum dots. Our new approach uses the Hamiltonian from the bulk materials constituent for the quantum dot to design an efficient preconditioner for the folded spectrum PCG method. The technique described shows promising results when applied to CdSe quantum dot model problems. We show a decrease in the number of iteration steps by at least a factor of 4 compared to the previously used diagonal preconditioner.

  8. Active neutron multiplicity counting of bulk uranium

    SciTech Connect (OSTI)

    Ensslin, N.; Krick, M.S.; Langner, D.G.; Miller, M.C. )

    1991-01-01

    This paper describes a new nondestructive assay technique being developed to assay bulk uranium containing kilogram quantities of {sup 235}U. The new technique uses neutron multiplicity analysis of data collected with a coincidence counter outfitted with AmLi neutron sources. The authors have calculated the expected neutron multiplicity count rate and assay precision for this technique and will report on its expected performance as a function of detector design characteristics, {sup 235}U sample mass, AmLi source strength, and source-to-sample coupling.

  9. Boundary Entropy Can Increase Under Bulk RG Flow (Journal Article...

    Office of Scientific and Technical Information (OSTI)

    Boundary Entropy Can Increase Under Bulk RG Flow Citation Details In-Document Search Title: Boundary Entropy Can Increase Under Bulk RG Flow The boundary entropy log(g) of a critical ...

  10. Boundary Entropy Can Increase Under Bulk RG Flow (Journal Article...

    Office of Scientific and Technical Information (OSTI)

    Boundary Entropy Can Increase Under Bulk RG Flow Citation Details In-Document Search Title: Boundary Entropy Can Increase Under Bulk RG Flow You are accessing a document from ...

  11. Designing of spin-filtering devices in zigzag graphene nanoribbons heterojunctions by asymmetric hydrogenation and B-N doping

    SciTech Connect (OSTI)

    Zhang, Dan; Zhang, Xiaojiao; Ouyang, Fangping; Li, Mingjun; Xu, Hui; Long, Mengqiu

    2015-01-07

    Using nonequilibrium Green's function in combination with the spin-polarized density functional theory, the spin-dependent transport properties of boron and nitrogen doped zigzag graphene nanoribbons (ZGNRs) heterojunctions with single or double edge-saturated hydrogen have been investigated. Our results show that the perfect spin-filtering effect (100%), rectifying behavior and negative differential resistance can be realized in the ZGNRs-based systems. And the corresponding physical analysis has been given.

  12. Solar resources

    SciTech Connect (OSTI)

    Hulstrom, R.L.

    1989-01-01

    Following the 1973 oil embargo, the US government initiated a program to develop and use solar energy. This led to individual programs devoted to developing various solar radiation energy conversion technologies: photovoltaic and solar-thermal conversion devices. Nearly concurrently, it was recognized that understanding the available insolation resources was required to develop and deploy solar energy devices and systems. It was also recognized that the insolation information available at that time (1973) was not adequate to meet the specific needs of the solar energy community. Federal efforts were initiated and conducted to produce new and more extensive information and data. The primary federal agencies that undertook such efforts were the Department of Energy (DOE) and the National Oceanic and Atmospheric Administration (NOAA). NOAA's efforts included activities performed by the National Weather Service (NWS) and the National Climatic Data Center (NCDC). This book has two man objectives: to report some of the insolation energy data, information, and products produced by the federal efforts and to describe how they were produced. Products include data bases, models and algorithms, monitoring networks, instrumentation, and scientific techniques. The scope of products and results does not include all those produced by past federal efforts. The book's scope and subject matter are oriented to support the intent and purpose of the other volumes in this series. In some cases, other pertinent material is presented to provide a more complete coverage of a given subject. 385 refs., 149 figs., 50 tabs.

  13. Negative ion extraction from hydrogen plasma bulk

    SciTech Connect (OSTI)

    Oudini, N.; Taccogna, F.; Minelli, P.

    2013-10-15

    A two-dimensional particle-in-cell/Monte Carlo collision model has been developed and used to study low electronegative magnetized hydrogen plasma. A configuration characterized by four electrodes is used: the left electrode is biased at V{sub l} = −100 V, the right electrode is grounded, while the upper and lower transversal electrodes are biased at an intermediate voltage V{sub ud} between 0 and −100 V. A constant and homogeneous magnetic field is applied parallel to the lateral (left/right) electrodes. It is shown that in the magnetized case, the bulk plasma potential is close to the transversal electrodes bias inducing then a reversed sheath in front of the right electrode. The potential drop within the reversed sheath is controlled by the transversal electrodes bias allowing extraction of negative ions with a significant reduction of co-extracted electron current. Furthermore, introducing plasma electrodes, between the transversal electrodes and the right electrode, biased with a voltage just above the plasma bulk potential, increases the negative ion extracted current and decreases significantly the co-extracted electron current. The physical mechanism on basis of this phenomenon has been discussed.

  14. MoS{sub 2}@ZnO nano-heterojunctions with enhanced photocatalysis and field emission properties

    SciTech Connect (OSTI)

    Tan, Ying-Hua; Yu, Ke Li, Jin-Zhu; Fu, Hao; Zhu, Zi-Qiang

    2014-08-14

    The molybdenum disulfide (MoS{sub 2})@ZnO nano-heterojunctions were successfully fabricated through a facile three-step synthetic process: prefabrication of the ZnO nanoparticles, the synthesis of MoS{sub 2} nanoflowers, and the fabrication of MoS{sub 2}@ZnO heterojunctions, in which ZnO nanoparticles were uniformly self-assembled on the MoS{sub 2} nanoflowers by utilizing polyethyleneimine as a binding agent. The photocatalytic activities of the composite samples were evaluated by monitoring the photodegradation of methylene blue (MB). Compared with pure MoS{sub 2} nanoflowers, the composites show higher adsorption capability in dark and better photocatalytic efficiency due to the increased specific surface area and improved electron-hole pair separation. After irradiation for 100?min, the remaining MB in solution is about 7.3%. Moreover, the MoS{sub 2}@ZnO heterojunctions possess enhanced field emission properties with lower turn-on field of 3.08?V ?m{sup ?1}and lower threshold field of 6.9?V ?m{sup ?1} relative to pure MoS{sub 2} with turn-on field of 3.65?V ?m{sup ?1} and threshold field of 9.03?V ?m{sup ?1}.

  15. Solar Equipment Certification

    Broader source: Energy.gov [DOE]

    Under the Solar Energy Standards Act of 1976, the Florida Solar Energy Center (FSEC) is responsible for certifying all solar equipment sold in Florida. A manufacturer who wishes to have their solar...

  16. Solar Neutrinos

    DOE R&D Accomplishments [OSTI]

    Davis, R. Jr.; Harmer, D. S.

    1964-12-01

    The prospect of studying the solar energy generation process directly by observing the solar neutrino radiation has been discussed for many years. The main difficulty with this approach is that the sun emits predominantly low energy neutrinos, and detectors for observing low fluxes of low energy neutrinos have not been developed. However, experimental techniques have been developed for observing neutrinos, and one can foresee that in the near future these techniques will be improved sufficiently in sensitivity to observe solar neutrinos. At the present several experiments are being designed and hopefully will be operating in the next year or so. We will discuss an experiment based upon a neutrino capture reaction that is the inverse of the electron-capture radioactive decay of argon-37. The method depends upon exposing a large volume of a chlorine compound, removing the radioactive argon-37 and observing the characteristic decay in a small low-level counter.

  17. Creating solar media nets solar tools, publicity

    SciTech Connect (OSTI)

    Brewer, B.

    1980-01-01

    The utilization of locally produced solar tool to gain more access to commercial media is discussed. Central is a strategy of (1) giving commercial media something to report, (2) helping educate the media, and (3) simultaneously impacting that portion of the public which is likely to be most interested. Methods for reaching several target audiences include a Solar Calendar, a Passive Solar Film, a local Solar Directory, a local Solar Information Center, an Emergency Coolth brochure and a Conservation/Solar Retrofit Guide.

  18. Solar ADEPT: Efficient Solar Energy Systems

    SciTech Connect (OSTI)

    2011-01-01

    Solar ADEPT Project: The 7 projects that make up ARPA-E's Solar ADEPT program, short for 'Solar Agile Delivery of Electrical Power Technology,' aim to improve the performance of photovoltaic (PV) solar energy systems, which convert the sun's rays into electricity. Solar ADEPT projects are integrating advanced electrical components into PV systems to make the process of converting solar energy to electricity more efficient.

  19. Concentrating Solar Power

    SciTech Connect (OSTI)

    Not Available

    2008-09-01

    Summarizes the goals and activities of the DOE Solar Energy Technologies Program efforts within its concentrating solar power subprogram.

  20. VISUAL-SOLAR

    Energy Science and Technology Software Center (OSTI)

    003661IBMPC00 Visual-SOLAR: Modeling and Visualization of Solar Radiation Potential on Individual Building Rooftops

  1. Solar Easements & Local Option Solar Rights Laws

    Broader source: Energy.gov [DOE]

    Utah's solar easement provision is similar to easement provisions in many other states. Parties may voluntarily enter into written solar easement contracts that are enforceable by law. An...

  2. Solar Energy Technologies Program: Concentrating Solar Power

    SciTech Connect (OSTI)

    2009-10-26

    Fact sheet summarizing the goals and activities of the DOE Solar Energy Technologies Program efforts within its concentrating solar power subprogram.

  3. Concentrating Solar Power Projects | Concentrating Solar Power...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SolarPACES, an international program of the International Energy Agency, furthers collaborative development, testing, and marketing of concentrating solar power plants. Activities ...

  4. Bulk amorphous steels based on Fe alloys

    DOE Patents [OSTI]

    Lu, ZhaoPing; Liu, Chain T.

    2006-05-30

    A bulk amorphous alloy has the approximate composition: Fe.sub.(100-a-b-c-d-e)Y.sub.aMn.sub.bT.sub.cM.sub.dX.sub.e wherein: T includes at least one of the group consisting of: Ni, Cu, Cr and Co; M includes at least one of the group consisting of W, Mo, Nb, Ta, Al and Ti; X includes at least one of the group consisting of Co, Ni and Cr; a is an atomic percentage, and a<5; b is an atomic percentage, and b.ltoreq.25; c is an atomic percentage, and c.ltoreq.25; d is an atomic percentage, and d.ltoreq.25; and e is an atomic percentage, and 5.ltoreq.e.ltoreq.30.

  5. Rotary adsorbers for continuous bulk separations

    DOE Patents [OSTI]

    Baker, Frederick S.

    2011-11-08

    A rotary adsorber for continuous bulk separations is disclosed. The rotary adsorber includes an adsorption zone in fluid communication with an influent adsorption fluid stream, and a desorption zone in fluid communication with a desorption fluid stream. The fluid streams may be gas streams or liquid streams. The rotary adsorber includes one or more adsorption blocks including adsorbent structure(s). The adsorbent structure adsorbs the target species that is to be separated from the influent fluid stream. The apparatus includes a rotary wheel for moving each adsorption block through the adsorption zone and the desorption zone. A desorption circuit passes an electrical current through the adsorbent structure in the desorption zone to desorb the species from the adsorbent structure. The adsorbent structure may include porous activated carbon fibers aligned with their longitudinal axis essentially parallel to the flow direction of the desorption fluid stream. The adsorbent structure may be an inherently electrically-conductive honeycomb structure.

  6. DEPLOYMENT OF THE BULK TRITIUM SHIPPING PACKAGE

    SciTech Connect (OSTI)

    Blanton, P.

    2013-10-10

    A new Bulk Tritium Shipping Package (BTSP) was designed by the Savannah River National Laboratory to be a replacement for a package that has been used to ship tritium in a variety of content configurations and forms since the early 1970s. The BTSP was certified by the National Nuclear Safety Administration in 2011 for shipments of up to 150 grams of Tritium. Thirty packages were procured and are being delivered to various DOE sites for operational use. This paper summarizes the design features of the BTSP, as well as associated engineered material improvements. Fabrication challenges encountered during production are discussed as well as fielding requirements. Current approved tritium content forms (gas and tritium hydrides), are reviewed, as well as, a new content, tritium contaminated water on molecular sieves. Issues associated with gas generation will also be discussed.

  7. DEVELOPMENT OF THE BULK TRITIUM SHIPPING PACKAGING

    SciTech Connect (OSTI)

    Blanton, P.; Eberl, K.

    2008-09-14

    A new radioactive shipping packaging for transporting bulk quantities of tritium, the Bulk Tritium Shipping Package (BTSP), has been designed for the Department of Energy (DOE) as a replacement for a package designed in the early 1970s. This paper summarizes significant design features and describes how the design satisfies the regulatory safety requirements of the Code of Federal Regulations and the International Atomic Energy Agency. The BTSP design incorporates many improvements over its predecessor by implementing improved testing, handling, and maintenance capabilities, while improving manufacturability and incorporating new engineered materials. This paper also discusses the results from testing of the BTSP to 10 CFR 71 Normal Conditions of Transport and Hypothetical Accident Condition events. The programmatic need of the Department of Energy (DOE) to ship bulk quantities of tritium has been satisfied since the late 1970s by the UC-609 shipping package. The current Certificate of Conformance for the UC-609, USA/9932/B(U) (DOE), will expire in late 2011. Since the UC-609 was not designed to meet current regulatory requirements, it will not be recertified and thereby necessitates a replacement Type B shipping package for continued DOE tritium shipments in the future. A replacement tritium packaging called the Bulk Tritium Shipping Package (BTSP) is currently being designed and tested by Savannah River National Laboratory (SRNL). The BTSP consists of two primary assemblies, an outer Drum Assembly and an inner Containment Vessel Assembly (CV), both designed to mitigate damage and to protect the tritium contents from leaking during the regulatory Hypothetical Accident Condition (HAC) events and during Normal Conditions of Transport (NCT). During transport, the CV rests on a silicone pad within the Drum Liner and is covered with a thermal insulating disk within the insulated Drum Assembly. The BTSP packaging weighs approximately 500 lbs without contents and is 50

  8. AV Solar Ranch I Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    AV Solar Ranch I Solar Power Plant Jump to: navigation, search Name AV Solar Ranch I Solar Power Plant Facility AV Solar Ranch I Sector Solar Facility Type Photovoltaic Developer...

  9. Amorphous/crystalline silicon interface passivation: Ambient-temperature dependence and implications for solar cell performance

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Seif, Johannes P.; Krishnamani, Gopal; Demaurex, Benedicte; Ballif, Christophe; Wolf, Stefaan De

    2015-03-02

    Silicon heterojunction (SHJ) solar cells feature amorphous silicon passivation films, which enable very high voltages. We report how such passivation increases with operating temperature for amorphous silicon stacks involving doped layers and decreases for intrinsic-layer-only passivation. We discuss the implications of this phenomenon on the solar cell's temperature coefficient, which represents an important figure-of-merit for the energy yield of devices deployed in the field. We show evidence that both open-circuit voltage (Voc) and fill factor (FF) are affected by these variations in passivation and quantify these temperature-mediated effects, compared with those expected from standard diode equations. We confirm that devicesmore » with high Voc values at 25°C show better high-temperature performance. Thus, we also argue that the precise device architecture, such as the presence of charge-transport barriers, may affect the temperature-dependent device performance as well.« less

  10. More stable hybrid organic solar cells deposited on amorphous Si electron transfer layer

    SciTech Connect (OSTI)

    Samiee, Mehran; Modtland, Brian; Dalal, Vikram L.; Aidarkhanov, Damir

    2014-05-26

    We report on defect densities, performance, and stability of organic/inorganic hybrid solar cells produced using n-doped inorganic amorphous silicon-carbide layers as the electron transport layer (ETL). The organic material was poly-3-hexyl-thiophene (P3HT) and heterojunction was formed using phenyl-C{sub 71}-Butyric-Acid-Methyl Ester (PCBM). For comparison, inverted solar cells fabricated using Cs{sub 2}CO{sub 3} as ETL were fabricated. Defect densities and subgap quantum efficiency curves were found to be nearly identical for both types of cells. The cells were subjected to 2xsun illumination and it was found that the cells produced using doped a-Si as ETL were much more stable than the cells produced using Cs{sub 2}CO{sub 3}.

  11. Amorphous/crystalline silicon interface passivation: Ambient-temperature dependence and implications for solar cell performance

    SciTech Connect (OSTI)

    Seif, Johannes P.; Krishnamani, Gopal; Demaurex, Benedicte; Ballif, Christophe; Wolf, Stefaan De

    2015-03-02

    Silicon heterojunction (SHJ) solar cells feature amorphous silicon passivation films, which enable very high voltages. We report how such passivation increases with operating temperature for amorphous silicon stacks involving doped layers and decreases for intrinsic-layer-only passivation. We discuss the implications of this phenomenon on the solar cell's temperature coefficient, which represents an important figure-of-merit for the energy yield of devices deployed in the field. We show evidence that both open-circuit voltage (Voc) and fill factor (FF) are affected by these variations in passivation and quantify these temperature-mediated effects, compared with those expected from standard diode equations. We confirm that devices with high Voc values at 25°C show better high-temperature performance. Thus, we also argue that the precise device architecture, such as the presence of charge-transport barriers, may affect the temperature-dependent device performance as well.

  12. Amorphous/crystalline silicon interface passivation: Ambient-temperature dependence and implications for solar cell performance

    SciTech Connect (OSTI)

    Seif, Johannes P.; Krishnamani, Gopal; Demaurex, Benedicte; Ballif, Christophe; Wolf, Stefaan De

    2015-03-02

    Silicon heterojunction (SHJ) solar cells feature amorphous silicon passivation films, which enable very high voltages. We report how such passivation increases with operating temperature for amorphous silicon stacks involving doped layers and decreases for intrinsic-layer-only passivation. We discuss the implications of this phenomenon on the solar cell's temperature coefficient, which represents an important figure-of-merit for the energy yield of devices deployed in the field. We show evidence that both open-circuit voltage (Voc) and fill factor (FF) are affected by these variations in passivation and quantify these temperature-mediated effects, compared with those expected from standard diode equations. We confirm that devices with high Voc values at 25C show better high-temperature performance. Thus, we also argue that the precise device architecture, such as the presence of charge-transport barriers, may affect the temperature-dependent device performance as well.

  13. Orlando, Florida: Solar in Action (Brochure), Solar America Cities...

    Office of Environmental Management (EM)

    Orlando, Florida: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Orlando, Florida: Solar in Action (Brochure), Solar America Cities,...

  14. Denver, Colorado: Solar in Action (Brochure), Solar America Cities...

    Office of Environmental Management (EM)

    Denver, Colorado: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Denver, Colorado: Solar in Action (Brochure), Solar America Cities,...

  15. Kings River Conservation District (KRCD) Solar Farm Solar Power...

    Open Energy Info (EERE)

    River Conservation District (KRCD) Solar Farm Solar Power Plant Jump to: navigation, search Name Kings River Conservation District (KRCD) Solar Farm Solar Power Plant Facility...

  16. Space Coast Next Generation Solar Energy Center Solar Power Plant...

    Open Energy Info (EERE)

    Coast Next Generation Solar Energy Center Solar Power Plant Jump to: navigation, search Name Space Coast Next Generation Solar Energy Center Solar Power Plant Facility Space Coast...

  17. Martin Next Generation Solar Energy Center Solar Power Plant...

    Open Energy Info (EERE)

    Next Generation Solar Energy Center Solar Power Plant Jump to: navigation, search Name Martin Next Generation Solar Energy Center Solar Power Plant Facility Martin Next Generation...

  18. Portland, Oregon: Solar in Action (Brochure), Solar America Cities...

    Office of Environmental Management (EM)

    Portland, Oregon: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Portland, Oregon: Solar in Action (Brochure), Solar America Cities, ...

  19. Solar Position Algorithm for Solar Radiation Applications (Revised...

    Office of Scientific and Technical Information (OSTI)

    Solar Position Algorithm for Solar Radiation Applications (Revised) Citation Details In-Document Search Title: Solar Position Algorithm for Solar Radiation Applications (Revised) ...

  20. EE Solar Energy Efficiency Solar | Open Energy Information

    Open Energy Info (EERE)

    EE Solar Energy Efficiency Solar Jump to: navigation, search Name: EE Solar (Energy Efficiency Solar) Place: Ponoma, California Zip: 91768 Product: PV systems installer based in...

  1. Willard Kelsey Solar Group WK Solar | Open Energy Information

    Open Energy Info (EERE)

    Willard Kelsey Solar Group WK Solar Jump to: navigation, search Name: Willard & Kelsey Solar Group (WK Solar) Place: Perrysburg, Ohio Zip: 43551 Product: Manufacturer of CdTe...

  2. Innotech Solar AS formerly known as Solar Cell Repower | Open...

    Open Energy Info (EERE)

    Innotech Solar AS formerly known as Solar Cell Repower Jump to: navigation, search Name: Innotech Solar AS (formerly known as Solar Cell Repower) Place: Narvik, Norway Zip: 8512...

  3. Wuxi Jiacheng Solar Energy Technology Co JC Solar | Open Energy...

    Open Energy Info (EERE)

    JC Solar Jump to: navigation, search Name: Wuxi Jiacheng Solar Energy Technology Co (JC Solar) Place: Yixing, Jiangsu Province, China Zip: 214200 Sector: Solar Product: A Chinese...

  4. Innovative Systems Engineering Solar LLC ISE Solar LLC | Open...

    Open Energy Info (EERE)

    Systems Engineering Solar LLC ISE Solar LLC Jump to: navigation, search Name: Innovative Systems Engineering Solar LLC (ISE Solar LLC) Place: Warminster, Pennsylvania Zip:...

  5. First Solar Electric LLC formerly DT Solar | Open Energy Information

    Open Energy Info (EERE)

    Electric LLC formerly DT Solar Jump to: navigation, search Name: First Solar Electric LLC (formerly DT Solar) Place: Branchburg, New Jersey Zip: 8876 Sector: Solar Product: PV...

  6. Aide Solar Jiangsu Aide Solar Energy Technology Co Ltd | Open...

    Open Energy Info (EERE)

    Aide Solar Jiangsu Aide Solar Energy Technology Co Ltd Jump to: navigation, search Name: Aide Solar (Jiangsu Aide Solar Energy Technology Co Ltd) Place: Xuzhou, Jiangsu Province,...

  7. AET Solar formerly solar division of GGAM Electrical Services...

    Open Energy Info (EERE)

    Solar formerly solar division of GGAM Electrical Services Jump to: navigation, search Name: AET Solar (formerly solar division of GGAM Electrical Services) Place: Limassol, Cyprus...

  8. Creative Energy Solar Investments SA formerly Hellenic Solar...

    Open Energy Info (EERE)

    Solar Investments SA formerly Hellenic Solar Jump to: navigation, search Name: Creative Energy Solar Investments SA (formerly Hellenic Solar) Place: 18538 Piraeus, Greece Product:...

  9. China Glass Solar aka CG Solar formerly Weihai Bluestar Terra...

    Open Energy Info (EERE)

    Glass Solar aka CG Solar formerly Weihai Bluestar Terra Photovoltaic Co Ltd Jump to: navigation, search Name: China Glass Solar (aka CG Solar, formerly Weihai Bluestar Terra...

  10. Siemens Solar formerly ARCO Solar Corporation | Open Energy Informatio...

    Open Energy Info (EERE)

    Solar formerly ARCO Solar Corporation Jump to: navigation, search Name: Siemens Solar (formerly ARCO Solar Corporation) Place: Arizona Product: Built a 6MW CPV project in 1984,...

  11. Siemens Concentrated Solar Power Ltd previously Solel Solar Systems...

    Open Energy Info (EERE)

    Siemens Concentrated Solar Power Ltd previously Solel Solar Systems Jump to: navigation, search Name: Siemens Concentrated Solar Power Ltd (previously Solel Solar Systems) Place:...

  12. Guodian Jintech Solar Energy formerly Yixing Jintech Solar Energy...

    Open Energy Info (EERE)

    Jintech Solar Energy formerly Yixing Jintech Solar Energy Co Ltd Jump to: navigation, search Name: Guodian Jintech Solar Energy (formerly Yixing Jintech Solar Energy Co Ltd) Place:...

  13. Shanghai Comtec Solar Technology Ltd aka Comtec Solar System...

    Open Energy Info (EERE)

    Comtec Solar Technology Ltd aka Comtec Solar System Group Ltd Jump to: navigation, search Name: Shanghai Comtec Solar Technology Ltd (aka Comtec Solar System Group Ltd) Place:...

  14. Ecosystem Solar Electric Corp aka Solar MW Energy Inc | Open...

    Open Energy Info (EERE)

    Solar Electric Corp aka Solar MW Energy Inc Jump to: navigation, search Name: Ecosystem Solar Electric Corp, aka Solar MW Energy Inc Place: Ontario, California Zip: 91761 Product:...

  15. ET Solar Group Formerly CNS Solar Industry | Open Energy Information

    Open Energy Info (EERE)

    Solar Group Formerly CNS Solar Industry Jump to: navigation, search Name: ET Solar Group (Formerly CNS Solar Industry) Place: Nanjing, Jiangsu Province, China Zip: 210009 Sector:...

  16. Entech Solar Inc formerly WorldWater Solar Technologies | Open...

    Open Energy Info (EERE)

    Solar Inc formerly WorldWater Solar Technologies Jump to: navigation, search Name: Entech Solar Inc. (formerly WorldWater & Solar Technologies) Place: Fort Worth, Texas Zip: 76177...

  17. Milwaukee, Wisconsin: Solar in Action (Brochure), Solar America...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Milwaukee, Wisconsin: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Milwaukee, Wisconsin: Solar in Action (Brochure), Solar America ...

  18. Houston, Texas: Solar in Action (Brochure), Solar America Cities...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Houston, Texas: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Houston, Texas: Solar in Action (Brochure), Solar America Cities, ...

  19. edition Not Available 14 SOLAR ENERGY; SOLAR ENERGY; EDUCATIONAL...

    Office of Scientific and Technical Information (OSTI)

    Home economics: student activities. Field test edition Not Available 14 SOLAR ENERGY; SOLAR ENERGY; EDUCATIONAL TOOLS; CURRICULUM GUIDES; GLAZING; HOUSES; SOLAR COOKERS; SOLAR...

  20. Solar Utility Networks: Replicable Innovations in Solar Energy...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Solar Utility Networks: Replicable Innovations in Solar Energy (SUNRISE) Funding Opportunity Solar Utility Networks: Replicable Innovations in Solar Energy (SUNRISE) Funding ...

  1. PROJECT PROFILE: The Solar Foundation - Solar Training Network...

    Energy Savers [EERE]

    Training Network PROJECT PROFILE: The Solar Foundation - Solar Training Network Project Name: Solar Training Network Funding Opportunity: Solar Training and Education for ...

  2. Seattle, Washington: Solar in Action (Brochure), Solar America...

    Energy Savers [EERE]

    Seattle, Washington: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Seattle, Washington: Solar in Action (Brochure), Solar America ...

  3. EIS-0449: Solar Millennium Blythe Solar Power Project in Riverside...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    9: Solar Millennium Blythe Solar Power Project in Riverside County, CA EIS-0449: Solar Millennium Blythe Solar Power Project in Riverside County, CA December 10, 2010 EIS-0449: ...

  4. Early solar mass loss, opacity uncertainties, and the solar abundance...

    Office of Scientific and Technical Information (OSTI)

    Early solar mass loss, opacity uncertainties, and the solar abundance problem Citation Details In-Document Search Title: Early solar mass loss, opacity uncertainties, and the solar ...

  5. EA-1798: Abengoa Solar's Mojave Solar Project near Barstow, CA...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    8: Abengoa Solar's Mojave Solar Project near Barstow, CA EA-1798: Abengoa Solar's Mojave Solar Project near Barstow, CA July 1, 2011 EA-1798: Final Environmental Assessment Loan ...

  6. San Antonio, Texas: Solar in Action (Brochure), Solar America...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Antonio, Texas: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) San Antonio, Texas: Solar in Action (Brochure), Solar America Cities, ...

  7. Solar Impulse's Solar-Powered Plane

    ScienceCinema (OSTI)

    Moniz, Ernest; Piccard, Bertrand; Reicher, Dan

    2014-01-07

    Solar Impulse lands in Washington, DC at Washington Dulles International Airport as part of its journey across the United States. Secretary Ernest Moniz speaks about how advancements like those at the Department of Energy are leading the way for innovations like the solar-powered plane. Footage of the solar-powered plane courtesy of Solar Impulse.

  8. Solar Impulse's Solar-Powered Plane

    SciTech Connect (OSTI)

    Moniz, Ernest; Piccard, Bertrand; Reicher, Dan

    2013-07-08

    Solar Impulse lands in Washington, DC at Washington Dulles International Airport as part of its journey across the United States. Secretary Ernest Moniz speaks about how advancements like those at the Department of Energy are leading the way for innovations like the solar-powered plane. Footage of the solar-powered plane courtesy of Solar Impulse.

  9. Concentrating Solar Power Projects | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects

  10. Electroluminescence from ZnO/Si heterojunctions fabricated by PLD with bias voltage application

    SciTech Connect (OSTI)

    Seno, Yuuki; Konno, Daisuke; Komiyama, Takao; Chonan, Yasunori; Yamaguchi, Hiroyuki; Aoyama, Takashi

    2014-02-21

    Electroluminescence (EL) for ZnO films has been investigated by fabricating n-ZnO/p-Si heterojunctions and changing the VI/II (O/Zn) ratio of the films. In the photoluminescence (PL) spectra, both the near band edge (NBE) emission and the defect-related emission were observed, while in the EL spectra only defect-related emission was observed. The EL spectra were divided into three components: green (550 nm), yellow (618 nm) and red (700 nm) bands; and their intensities were compared. As the VI/II (O/Zn) ratio was increased, the red band emission intensity decreased and the green band emission intensity increased. This implies that the oxygen and the zinc vacancies are related to the red and the green band emissions, respectively. Electron transitions from the conduction band minimum (Ec) to the deep energy levels of these vacancies are suggested to cause the red and the green luminescences while the energy levels of the Zn interstitials are close to the Ec in the band gap and no NBE emission is observed.

  11. Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors

    SciTech Connect (OSTI)

    Rajamohanan, Bijesh Mohata, Dheeraj; Hollander, Matthew; Datta, Suman; Zhu, Yan; Hudait, Mantu; Jiang, Zhengping; Klimeck, Gerhard

    2014-01-28

    In this paper, we demonstrate InAs/GaSb hetero-junction (hetJ) and GaSb homo-junction (homJ) p-channel tunneling field effect transistors (pTFET) employing a low temperature atomic layer deposited high-κ gate dielectric. HetJ pTFET exhibited drive current of 35 μA/μm in comparison to homJ pTFET, which exhibited drive current of 0.3 μA/μm at V{sub DS} = −0.5 V under DC biasing conditions. Additionally, with pulsing of 1 μs gate voltage, hetJ pTFET exhibited enhanced drive current of 85 μA/μm at V{sub DS} = −0.5 V, which is the highest reported in the category of III-V pTFET. Detailed device characterization was performed through analysis of the capacitance-voltage characteristics, pulsed current-voltage characteristics, and x-ray diffraction studies.

  12. Asymmetric Electron Transport at Monolayer-Bilayer Heterojunctions of Epitaxial Graphene

    SciTech Connect (OSTI)

    Li, An-Ping [ORNL] [ORNL; Clark, Kendal W [ORNL] [ORNL; Zhang, Xiaoguang [ORNL] [ORNL; Gu, Gong [University of Tennessee, Knoxville (UTK)] [University of Tennessee, Knoxville (UTK); He, Guowei [Carnegie Mellon University (CMU)] [Carnegie Mellon University (CMU); Feenstra, Randall [Carnegie Mellon University (CMU)] [Carnegie Mellon University (CMU)

    2014-01-01

    The symmetry of the graphene honeycomb lattice is a key element determining many of graphene s unique electronic properties, such as the linear energy-momentum dispersion and the suppressed backscattering 1,2. However, line defects in large-scale epitaxial graphene films, such as grain boundaries, edges, surface steps, and changes in layer thickness, often break the sublatttice symmetry and can impact transport properties of graphene profoundly 3-6. Here we report asymmetric electron transport upon polarity reversal at individual monolayer-bilayer (ML-BL) boundaries in epitaxial graphene on SiC (0001), revealed by scanning tunneling potentiometry. A greater voltage drop is observed when the current flows from BL to ML graphene than in the reverse direction, and the difference remains nearly unchanged with increasing current. This is not a typical nonlinear conductance due to electron transmission through an asymmetric potential. Rather, it indicates the opening of a dynamic energy gap at the Fermi energy due to the Coulomb interaction between the injected nonequilibrium electron density and the pseudospin polarized Friedel oscillation charge density at the boundary. This intriguing heterojunction transport behavior opens a new avenue towards novel quantum functions such as quantum switching.

  13. Hetero-junction photovoltaic device and method of fabricating the device

    DOE Patents [OSTI]

    Aytug, Tolga; Christen, David K; Paranthaman, Mariappan Parans; Polat, Ozgur

    2014-02-10

    A hetero-junction device and fabrication method in which phase-separated n-type and p-type semiconductor pillars define vertically-oriented p-n junctions extending above a substrate. Semiconductor materials are selected for the p-type and n-type pillars that are thermodynamically stable and substantially insoluble in one another. An epitaxial deposition process is employed to form the pillars on a nucleation layer and the mutual insolubility drives phase separation of the materials. During the epitaxial deposition process, the orientation is such that the nucleation layer initiates propagation of vertical columns resulting in a substantially ordered, three-dimensional structure throughout the deposited material. An oxidation state of at least a portion of one of the p-type or the n-type semiconductor materials is altered relative to the other, such that the band-gap energy of the semiconductor materials differ with respect to stoichiometric compositions and the device preferentially absorbs particular selected bands of radiation.

  14. Solar engineering 1991

    SciTech Connect (OSTI)

    Mancini, T.R. ); Watanabe, K. ); Klett, D.E. )

    1991-01-01

    This book contains paper presented at the second ASME-JSES-JSME international solar energy conference. It is organized under the following headings: Solar ponds, Energy fundamentals in solar systems, General solar energy, Solar powered cars, Distributed receiver components and systems, Central receiver components and systems, Chemical processes and waste destruction, High flux and innovative applications, Solar thermal space propulsion, Solar dynamic power systems, Analysis methods for monitored building use. Photovoltaics, Testing and measurement.

  15. Solar collector

    SciTech Connect (OSTI)

    Wilhelm, W.G.

    1982-05-04

    The field of this invention is solar collectors, and more particularly, the invention pertains to a flat plate collector that employs high performance thin films. The solar collector of this invention overcomes several problems in this field, such as excessive hardware, cost and reliability, and other prior art drawbacks outlined in the specification. In the preferred form, the apparatus features a substantially rigid planar frame. A thin film window is bonded to one planar side of the frame. An absorber of laminate construction is comprised of two thin film layers that are sealed perimetrically. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. Absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  16. Shell Solar | Open Energy Information

    Open Energy Info (EERE)

    Solar Jump to: navigation, search Name: Shell Solar Place: The Hague, Netherlands Zip: 2501 AN Sector: Solar Product: Shell Solar is developing non-crystalline PV technology,...

  17. Apex Solar | Open Energy Information

    Open Energy Info (EERE)

    Name: Apex Solar Place: Sofia, Bulgaria Zip: 1616 Sector: Solar Product: Bulgarian PV and solar thermal project developer and installer. References: Apex Solar1 This article is a...

  18. Atlantic Solar | Open Energy Information

    Open Energy Info (EERE)

    navigation, search Logo: Atlantic Solar Name: Atlantic Solar Place: Cape Town, South Africa Sector: Solar Product: Solar Thermal Technology Year Founded: 1985 Phone Number:...

  19. Declination Solar | Open Energy Information

    Open Energy Info (EERE)

    San Francisco, California Sector: Solar Product: San Francisco solar installation firm acquired by SolarCity in September 2006. References: Declination Solar1 This article...

  20. Solar Energy | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Resource Library Solar Energy Solar Energy Below are resources for Tribes on solar energy technologies. A Guide to Community Solar: Utility, Private, and Nonprofit ...

  1. Corona Solar | Open Energy Information

    Open Energy Info (EERE)

    Solar Jump to: navigation, search Name: Corona Solar Place: Tholey-Theley, Germany Zip: D 66636 Sector: Solar Product: Engaged in solar passive large-size collectors. References:...

  2. AS Solar | Open Energy Information

    Open Energy Info (EERE)

    Solar Jump to: navigation, search Name: AS Solar Address: Am Tnniesberg 4A Place: Hannover, Germany Sector: Solar Product: PV, solar thermal Phone Number: +49 511 475578 - 0...

  3. Abengoa Solar | Open Energy Information

    Open Energy Info (EERE)

    Solar Jump to: navigation, search Logo: Abengoa Solar Name: Abengoa Solar Address: 11500 W 13th Ave Place: Lakewood, Colorado Zip: 80215 Region: Rockies Area Sector: Solar Product:...

  4. First Solar | Open Energy Information

    Open Energy Info (EERE)

    First Solar Name: First Solar Address: 350 West Washington Street, Suite 600 Place: Tempe, Arizona Zip: 85281 Sector: Solar Product: Solar energy systems Year Founded: 1999 Phone...

  5. Solar Systems | Open Energy Information

    Open Energy Info (EERE)

    Logo: Solar Systems Name: Solar Systems Address: 45 Grosvenor Street Place: Abbotsford, Australia Sector: Solar Product: Solar concentrators Phone Number: +61 3 9413 8000 Website:...

  6. Ascent Solar | Open Energy Information

    Open Energy Info (EERE)

    Solar Jump to: navigation, search Logo: Ascent Solar Name: Ascent Solar Address: 12300 Grant Street Place: Thornton, Colorado Zip: 80241 Region: Rockies Area Sector: Solar Product:...

  7. Borrego Solar | Open Energy Information

    Open Energy Info (EERE)

    Borrego Solar Jump to: navigation, search Logo: Borrego Solar Name: Borrego Solar Address: 2560 9th Street Place: Berkeley, California Zip: 94710 Region: Bay Area Sector: Solar...

  8. DPW Solar | Open Energy Information

    Open Energy Info (EERE)

    DPW Solar Jump to: navigation, search Logo: DPW Solar Name: DPW Solar Address: 4000 B Vassar Dr. NE Place: Albuquerque, New Mexico Zip: 87107 Sector: Solar Product: Renewable...

  9. Inovateus Solar | Open Energy Information

    Open Energy Info (EERE)

    Inovateus Solar Jump to: navigation, search Logo: Inovateus Solar Name: Inovateus Solar Address: 19890 State Line Rd. Place: South Bend, Indiana Zip: 46637 Sector: Solar Product:...

  10. Standard Solar | Open Energy Information

    Open Energy Info (EERE)

    Standard Solar Name: Standard Solar Address: 202 Perry Parkway Place: Gaithersburg, Maryland Zip: 20877 Region: Northeast - NY NJ CT PA Area Sector: Solar Product: Solar...

  11. Wasatch Solar | Open Energy Information

    Open Energy Info (EERE)

    Solar Jump to: navigation, search Name: Wasatch Solar Address: 4417 S 2950 E Place: Salt Lake City, Utah Zip: 84124 Sector: Solar Product: Solar Year Founded: 2009 Phone...

  12. Sylcom Solar | Open Energy Information

    Open Energy Info (EERE)

    Sylcom Solar provides the design, research, distribution, construction, operation, maintenance of products and of Photovoltaic Solar, Thermal Solar and Solar Thermoelectric...

  13. Genesis Solar | Open Energy Information

    Open Energy Info (EERE)

    Genesis Solar Facility Genesis Solar Sector Solar Facility Type Concentrating solar power Facility Status Under Construction Owner NextEra Developer NextEra Location Blythe,...

  14. Solar Easements | Department of Energy

    Office of Environmental Management (EM)

    Process Heat Solar Photovoltaics Daylighting Solar Pool Heating Program Info Sector Name State State Kentucky Program Type SolarWind Access Policy Summary In Kentucky, solar ...

  15. Preussen Solar | Open Energy Information

    Open Energy Info (EERE)

    Preussen Solar Jump to: navigation, search Name: Preussen Solar Place: Berlin, Germany Zip: 10711 Sector: Solar Product: Involved in solar projects. Coordinates: 52.516074,...

  16. Scaled Solar | Open Energy Information

    Open Energy Info (EERE)

    Solar Product: Scaled Solar manufacturers and markets utility-grade, concentrated photovoltaic solar energy systems to commercial customers References: Scaled Solar1 This...

  17. Solar PST | Open Energy Information

    Open Energy Info (EERE)

    search Name: Solar PST Place: Bergondo, Spain Zip: 15 165 Sector: Solar Product: Spanish company producing thermodynamic solar panels. References: Solar PST1 This article...

  18. Immodo Solar | Open Energy Information

    Open Energy Info (EERE)

    Jump to: navigation, search Name: Immodo Solar Place: Spain Sector: Solar Product: Spanish company which installs and maintains solar panels. References: Immodo Solar1 This...

  19. Solarize Guidebook | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Solarize Guidebook Solarize Guidebook This guidebook is intended to be a roadmap for project planners and solar advocates who want to create their own successful Solarize ...

  20. Measurement of the valence band-offset in a PbSe/ZnO heterojunction by x-ray photoelectron spectroscopy

    SciTech Connect (OSTI)

    Li Lin; Qiu Jijun; Weng Binbin; Yuan Zijian; Shi Zhisheng; Li Xiaomin; Gan Xiaoyan; Sellers, Ian R.

    2012-12-24

    A heterojunction of PbSe/ZnO has been grown by molecular beam epitaxy. X-ray photoelectron spectroscopy was used to directly measure the valence-band offset (VBO) of the heterojunction. The VBO, {Delta}E{sub V}, was determined as 2.51 {+-} 0.05 eV using the Pb 4p{sup 3/2} and Zn 2p{sup 3/2} core levels as a reference. The conduction-band offset, {Delta}E{sub C}, was, therefore, determined to be 0.59 {+-} 0.05 eV based on the above {Delta}E{sub V} value. This analysis indicates that the PbSe/ZnO heterojunction forms a type I (Straddling Gap) heterostructure.

  1. Solar Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Energy Defense Waste Management Programs Advanced Nuclear Energy

  2. Solar cogeneration

    SciTech Connect (OSTI)

    Not Available

    1982-04-01

    After a brief introduction to the operational principles and advantages of solar cogeneration, seven cogeneration studies are summarized covering such applications as sulfur mining, copper smelting, enhanced oil recovery, natural gas processing, sugar mill operations, and space heating and cooling. For each plant is given a brief site description, project summary, conceptual design, and functional description, including a picture of the facility and a flow chart. Also listed are the addresses of the companies involved for obtaining additional information. (LEW)

  3. Solar Newsletter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2 - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Energy Defense Waste Management Programs Advanced Nuclear Energy Nuclear

  4. Determination of Bulk Dimensional Variation in Castings

    SciTech Connect (OSTI)

    Dr. James F. Cuttino Dr. Edward P. Morse

    2005-04-14

    The purpose of this work is to improve the efficiency of green sand foundries so that they may continue to compete as the most cost-effective method of fabrication while meeting tightening constraints on near-net shape manufacturing. In order to achieve this objective, the study is divided into two major components. The first component concentrated on identifying which processes control surface finish on the castings and which provide potential reductions in variations. The second component identified metrological methods that effectively discern between the geometry of bulk material versus surface finish in order to more accurately determine the quality of a part. The research resulted in the determination of an empirical relationship relating pouring parameters to dimensional variation, with an R2 value of greater than 0.79. A significant difference in variations obtained from vertical vs. horizontal molding machines was also noticed. When analyzed separately, however, the resulting empirical relationships for horizontal and vertical machines had reduced R2 values, probably due to the reduced data sets. Significant parameters when considering vertical and horizontal molding machines together included surface roughness, pattern type, iron type, pouring rate, copper content, amount of Western Bentonite, and permeability.

  5. Excitonic exchange splitting in bulk semiconductors

    SciTech Connect (OSTI)

    Fu, H.; Wang, L.; Zunger, A.

    1999-02-01

    We present an approach to calculate the excitonic fine-structure splittings due to electron-hole short-range exchange interactions using the local-density approximation pseudopotential method, and apply it to bulk semiconductors CdSe, InP, GaAs, and InAs. Comparing with previous theoretical results, the current calculated splittings agree well with experiments. Furthermore, we provide an approximate relationship between the short-range exchange splitting and the exciton Bohr radius, which can be used to estimate the exchange splitting for other materials. The current calculation indicates that a commonly used formula for exchange splitting in quantum dot is not valid. Finally, we find a very large pressure dependence of the exchange splitting: a factor of 4.5 increase as the lattice constant changes by 3.5{percent}. This increase is mainly due to the decrease of the Bohr radius via the change of electron effective mass. {copyright} {ital 1999} {ital The American Physical Society}

  6. Thermodynamic properties of bulk and confined water

    SciTech Connect (OSTI)

    Mallamace, Francesco; Corsaro, Carmelo; Mallamace, Domenico; Vasi, Sebastiano; Vasi, Cirino; Stanley, H. Eugene

    2014-11-14

    The thermodynamic response functions of water display anomalous behaviors. We study these anomalous behaviors in bulk and confined water. We use nuclear magnetic resonance (NMR) to examine the configurational specific heat and the transport parameters in both the thermal stable and the metastable supercooled phases. The data we obtain suggest that there is a behavior common to both phases: that the dynamics of water exhibit two singular temperatures belonging to the supercooled and the stable phase, respectively. One is the dynamic fragile-to-strong crossover temperature (T{sub L} ? 225K). The second, T{sup *} ? 315 5K, is a special locus of the isothermal compressibility K{sub T}(T, P) and the thermal expansion coefficient ?{sub P}(T, P) in the PT plane. In the case of water confined inside a protein, we observe that these two temperatures mark, respectively, the onset of protein flexibility from its low temperature glass state (T{sub L}) and the onset of the unfolding process (T{sup *})

  7. ARM - Campaign Instrument - ec-convair580-bulk

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govInstrumentsec-convair580-bulk Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign Instrument : Environment Canada Convair 580 Bulk Parameters (EC-CONVAIR580-BULK) Instrument Categories Aerosols, Airborne Observations, Cloud Properties Campaigns Indirect and Semi-Direct Aerosol Campaign (ISDAC) [ Download Data ] North Slope Alaska, 2008.04.01 - 2008.04.30 Primary Measurements Taken The following measurements are those considered

  8. Solar Contractor Licensing | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    < Back Eligibility InstallersContractors Savings Category Solar - Passive Solar Water Heat Solar Space Heat Solar Thermal Electric Solar Thermal Process Heat Solar Photovoltaics...

  9. Highly efficient visible-light-induced photocatalytic activity of Bi{sub 2}WO{sub 6}/BiVO{sub 4} heterojunction photocatalysts

    SciTech Connect (OSTI)

    Chaiwichian, Saranyoo; Inceesungvorn, Burapat; Wetchakun, Khatcharin; Phanichphant, Sukon; Kangwansupamonkon, Wiyong; Wetchakun, Natda

    2014-06-01

    Highlights: Bi{sub 2}WO{sub 6}/BiVO{sub 4} heterojunction photocatalysts were obtained using hydrothermal method. Physicochemical properties played a significant role on photocatalytic efficiency. Bi{sub 2}WO{sub 6}/BiVO{sub 4} heterogeneous structures were greatly enhanced for degradation of MB. A tentative mechanism of charge transfer process in MB degradation was proposed. - Abstract: The Bi{sub 2}WO{sub 6}/BiVO{sub 4} heterojunction photocatalysts were synthesized by hydrothermal method. Physical properties of the heterojunction photocatalyst samples were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques. The XRD results indicated that BiVO{sub 4} retain monoclinic and tetragonal structures, while Bi{sub 2}WO{sub 6} presented as orthorhombic structure. The Brunauer, Emmett and Teller (BET) adsorptiondesorption of nitrogen gas for specific surface area determination at the temperature of liquid nitrogen was performed on all samples. UVvis diffuse reflectance spectra (UVvis DRS) were used to identify the absorption range and band gap energy of the heterojunction photocatalysts. The photocatalytic performance of Bi{sub 2}WO{sub 6}/BiVO{sub 4} heterojunction photocatalysts was studied via the photodegradation of methylene blue (MB) under visible light irradiation. The results indicated that the heterojunction photocatalyst at 0.5:0.5 mole ratio of Bi{sub 2}WO{sub 6}:BiVO{sub 4} shows the highest photocatalytic activity.

  10. RAPID/BulkTransmission/Environment | Open Energy Information

    Open Energy Info (EERE)

    Policy Act (HEPA) Hawaii Department of Health Office of Environmental Quality Control Bulk Transmission Environment in Idaho Varies by local municipality Varies by...

  11. Economic manufacturing of bulk metallic glass compositions by microalloying

    DOE Patents [OSTI]

    Liu, Chain T.

    2003-05-13

    A method of making a bulk metallic glass composition includes the steps of:a. providing a starting material suitable for making a bulk metallic glass composition, for example, BAM-11; b. adding at least one impurity-mitigating dopant, for example, Pb, Si, B, Sn, P, to the starting material to form a doped starting material; and c. converting the doped starting material to a bulk metallic glass composition so that the impurity-mitigating dopant reacts with impurities in the starting material to neutralize deleterious effects of the impurities on the formation of the bulk metallic glass composition.

  12. Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate

    Broader source: Energy.gov [DOE]

    This project is producing high-efficiency semipolar light-emitting diodes (LEDs) on low-defect bulk gallium nitride (GaN) substrates.

  13. ,"Finished Motor Gasoline Refinery, Bulk Terminal, and Natural...

    U.S. Energy Information Administration (EIA) Indexed Site

    and Natural Gas Plants (Thousand Barrels)","East Coast (PADD 1) Finished Motor Gasoline Stocks at Refineries, Bulk Terminals, and Natural Gas Plants (Thousand ...

  14. RAPID/BulkTransmission/About | Open Energy Information

    Open Energy Info (EERE)

    Current Topics in Bulk Transmission West-Wide Energy Corridor Programmatic Environmental Impact Statement The West-Wide Energy Corridor Programmatic Environmental Impact Statement...

  15. Federal Bulk Transmission Regulatory Roadmapping | OpenEI Community

    Open Energy Info (EERE)

    Federal Bulk Transmission Regulatory Roadmapping Home > Features > Groups Content Group Activity By term Q & A Feeds Content type Blog entry Discussion Document Event Poll...

  16. Enhancing covalent mechanochemistry in bulk polymers using electrospun...

    Office of Scientific and Technical Information (OSTI)

    Enhancing covalent mechanochemistry in bulk polymers using electrospun ABA triblock copolymers Citation Details In-Document Search Title: Enhancing covalent mechanochemistry in ...

  17. High-Quality, Low-Cost Bulk Gallium Nitride Substrates

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    achieving GaN bulk growth without the limitations of tradi- tional crystal growth methods. ... MEMC technology transfer and marketing staff are coordinating with the research team to ...

  18. Lithium Ion Solvation and Diffusion in Bulk Organic Electrolytes...

    Office of Scientific and Technical Information (OSTI)

    Title: Lithium Ion Solvation and Diffusion in Bulk Organic Electrolytes from First Principles and Classical Reactive Molecular Dynamics Authors: Ong, M T ; Verners, O ; Draeger, E ...

  19. RAPID/BulkTransmission/Hawaii | Open Energy Information

    Open Energy Info (EERE)

    information about BulkTransmission in Hawaii. Use the Edit with form button to editupdate. Planning Organizations not provided Hawaii Owners not provided Current Projects not...

  20. RAPID/BulkTransmission/Alaska | Open Energy Information

    Open Energy Info (EERE)

    information about BulkTransmission in Alaska. Use the Edit with form button to editupdate. Planning Organizations not provided Alaska Owners not provided Current Projects not...

  1. RAPID/BulkTransmission/Texas | Open Energy Information

    Open Energy Info (EERE)

    information about BulkTransmission in Texas. Use the Edit with form button to editupdate. Planning Organizations not provided Texas Owners not provided Current Projects not...

  2. Investigation of Interfacial and Bulk Dissociation of HBr, HCl...

    Office of Scientific and Technical Information (OSTI)

    Investigation of Interfacial and Bulk Dissociation of HBr, HCl, and HNO3 Using Density Functional Theory-Based Molecular Dynamics Simulations Citation Details In-Document Search...

  3. Category:Bulk Transmission Regulatory Roadmap Sections | Open...

    Open Energy Info (EERE)

    Login | Sign Up Search Category Edit History Category:Bulk Transmission Regulatory Roadmap Sections Jump to: navigation, search GRR-logo.png Looking for the RAPIDRoadmap?...

  4. RAPID/BulkTransmission/Colorado | Open Energy Information

    Open Energy Info (EERE)

    the Regional Entity responsible for coordinating and promoting Bulk Electric System reliability in the Western Interconnection, including in Colorado. In addition, WECC provides...

  5. RAPID/BulkTransmission/Idaho | Open Energy Information

    Open Energy Info (EERE)

    the Regional Entity responsible for coordinating and promoting Bulk Electric System reliability in the Western Interconnection, including in Idaho. In addition, WECC provides an...

  6. RAPID/BulkTransmission/Washington | Open Energy Information

    Open Energy Info (EERE)

    the Regional Entity responsible for coordinating and promoting Bulk Electric System reliability in the Western Interconnection, including in Washington. In addition, WECC provides...

  7. RAPID/BulkTransmission/Nevada | Open Energy Information

    Open Energy Info (EERE)

    the Regional Entity responsible for coordinating and promoting Bulk Electric System reliability in the Western Interconnection, including in Nevada. WECC also provides an...

  8. RAPID/BulkTransmission/Arizona | Open Energy Information

    Open Energy Info (EERE)

    the Regional Entity responsible for coordinating and promoting Bulk Electric System reliability in the Western Interconnection, including Arizona. WECC also provides an...

  9. RAPID/BulkTransmission/Oregon | Open Energy Information

    Open Energy Info (EERE)

    the Regional Entity responsible for coordinating and promoting Bulk Electric System reliability in the Western Interconnection, including Oregon. WECC also provides an environment...

  10. Recent Device Developments with Advanced Bulk Thermoelectric Materials at RTI

    Broader source: Energy.gov [DOE]

    Reviews work in engineered thin-film nanoscale thermoelectric materials and nano-bulk materials with high ZT undertaken by RTI in collaboration with its research partners

  11. High Heat Flux Thermoelectric Module Using Standard Bulk Material

    Broader source: Energy.gov [DOE]

    Presents high heat flux thermoelectric module design for cooling using a novel V-shaped shunt configuration with bulk TE elements achieving high area packing fractions

  12. Ensuring a Reliable Bulk Electric System | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Electric Reliability Corporation (NERC): Ensuring a Reliable Bulk Electric System Cooling Tower Report, October 2008 Transmission Constraints and Congestion in the Western...

  13. Strategies for High Thermoelectric zT in Bulk Materials

    Office of Energy Efficiency and Renewable Energy (EERE)

    Zintl principle in chemistry, complex electronic band structures, and incorporation of nanometer sized particles were used to explore, optimize and improve bulk thermoelectric materials

  14. RAPID/BulkTransmission/Site Considerations | Open Energy Information

    Open Energy Info (EERE)

    and comparison for Bulk Transmission Site Considerations across various states. To learn more detailed information about Site Considerations in a state, click on the...

  15. RAPID/BulkTransmission/Land Access | Open Energy Information

    Open Energy Info (EERE)

    RAPIDBulkTransmissionLand Access < RAPID | BulkTransmission(Redirected from RAPIDBulkTransmissionLeasing) Jump to: navigation, search RAPID Regulatory and Permitting...

  16. The Best of Both Worlds: Bulk Diamond Properties Realized at...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    a level of crystallographic and electronic ordering in purified HPHT nanodiamonds that matches fundamental properties of bulk diamond to the nanoscale while retaining its...

  17. Nanostructured High-Temperature Bulk Thermoelectric Energy Conversion...

    Broader source: Energy.gov (indexed) [DOE]

    Energy Conversion for Efficient Waste Heat Recovery Nanostructured High-Temperature Bulk Thermoelectric Energy Conversion for Efficient Automotive Waste Heat Recovery ...

  18. Solar energy collector

    DOE Patents [OSTI]

    Brin, Raymond L.; Pace, Thomas L.

    1978-01-01

    The invention relates to a solar energy collector comprising solar energy absorbing material within chamber having a transparent wall, solar energy being transmitted through the transparent wall, and efficiently absorbed by the absorbing material, for transfer to a heat transfer fluid. The solar energy absorbing material, of generally foraminous nature, absorbs and transmits the solar energy with improved efficiency.

  19. Solar Innovator | Alta Devices

    ScienceCinema (OSTI)

    Mattos, Laila; Le, Minh

    2013-05-29

    Selected to participate in the Energy Department's SunShot Initiative, Alta Devices produces solar cells that convert sunlight into electricity at world record-breaking levels of efficiency. Through its innovative solar technology Alta is helping bring down the cost of solar. Learn more about the Energy Department's efforts to advance solar technology at energy.gov/solar .

  20. Bulk Vitrification Castable Refractory Block Protection Study

    SciTech Connect (OSTI)

    Hrma, Pavel R.; Bagaasen, Larry M.; Beck, Andrew E.; Brouns, Thomas M.; Caldwell, Dustin D.; Elliott, Michael L.; Matyas, Josef; Minister, Kevin BC; Schweiger, Michael J.; Strachan, Denis M.; Tinsley, Bronnie P.; Hollenberg, Glenn W.

    2005-05-01

    Bulk vitrification (BV) was selected for a pilot-scale test and demonstration facility for supplemental treatment to accelerate the cleanup of low-activity waste (LAW) at the Hanford U.S. DOE Site. During engineering-scale (ES) tests, a small fraction of radioactive Tc (and Re, its nonradioactive surrogate) were transferred out of the LAW glass feed and molten LAW glass, and deposited on the surface and within the pores of the castable refractory block (CRB). Laboratory experiments were undertaken to understand the mechanisms of the transport Tc/Re into the CRB during vitrification and to evaluate various means of CRB protection against the deposition of leachable Tc/Re. The tests used Re as a chemical surrogate for Tc. The tests with the baseline CRB showed that the molten LAW penetrates into CRB pores before it converts to glass, leaving deposits of sulfates and chlorides when the nitrate components decompose. Na2O from the LAW reacts with the CRB to create a durable glass phase that may contain Tc/Re. Limited data from a single CRB sample taken from an ES experiment indicate that, while a fraction of Tc/Re is present in the CRB in a readily leachable form, most of the Tc/Re deposited in the refractory is retained in the form of a durable glass phase. In addition, the molten salts from the LAW, mainly sulfates, chlorides, and nitrates, begin to evaporate from BV feeds at temperatures below 800 C and condense on solid surfaces at temperatures below 530 C. Three approaches aimed at reducing or preventing the deposition of soluble Tc/Re within the CRB were proposed: metal lining, sealing the CRB surface with a glaze, and lining the CRB with ceramic tiles. Metal liners were deemed unsuitable because evaluations showed that they can cause unacceptable distortions of the electric field in the BV system. Sodium silicate and a low-alkali borosilicate glaze were selected for testing. The glazes slowed down molten salt condensate penetration, but did little to reduce the

  1. Concentrating Solar Power Projects - Nevada Solar One | Concentrating Solar

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Power | NREL Nevada Solar One This page provides information on Nevada Solar One, a concentrating solar power (CSP) project, with data organized by background, participants, and power plant configuration. Acciona Energy's Nevada Solar One is the third largest CSP plant in the world and the first plant built in the United States since 1999. Located in Boulder City, Nevada, about 40 miles southeast of Las Vegas, this parabolic trough system has been operating since June 2007. The US$260

  2. Structural and photovoltaic properties of a-Si (SNc)/c-Si heterojunction fabricated by EBPVD technique

    SciTech Connect (OSTI)

    Demiro?lu, D.; Kazmanli, K.; Urgen, M.; Tatar, B.

    2013-12-16

    In last two decades sculptured thin films are very attractive for researches. Some properties of these thin films, like high porosity correspondingly high large surface area, controlled morphology; bring into prominence on them. Sculptured thin films have wide application areas as electronics, optics, mechanics, magnetic and chemistry. Slanted nano-columnar (SnC) thin films are a type of sculptured thin films. In this investigation SnC thin films were growth on n-type crystalline Si(100) and p-type crystalline Si(111) via ultra-high vacuum electron beam evaporation technique. The structural and morphological properties of the amorphous silicon thin films were investigated by XRD, Raman and FE-SEM analysis. According to the XRD and Raman analysis the structure of thin film was amorphous and FE-SEM analysis indicated slanted nano-columns were formed smoothly. Slanted nano-columns a-Si/c-Si heterojunction were prepared as using a photovoltaic device. In this regard we were researched photovoltaic properties of these heterojunction with current-voltage characterization under dark and illumination conditions. Electrical parameters were determined from the current-voltage characteristic in the dark conditions zero-bias barrier height ?{sub B0}?=?0.83?1.00eV; diode ideality factor ??=?11.71?10.73; series resistance R{sub s}?=?260?31.1 k? and shunt resistance R{sub sh}?=?25.71?63.5 M? SnC a-Si/n-Si and SnC a-Si/p-Si heterojunctions shows a pretty good photovoltaic behavior about 10{sup 3}- 10{sup 4} times. The obtained photovoltaic parameters are such as short circuit current density J{sub sc} 83-40 mA/m{sup 2}, open circuit voltage V{sub oc} 900-831 mV.

  3. Silicon bulk micromachined hybrid dimensional artifact.

    SciTech Connect (OSTI)

    Claudet, Andre A.; Tran, Hy D.; Bauer, Todd Marks; Shilling, Katherine Meghan; Oliver, Andrew David

    2010-03-01

    A mesoscale dimensional artifact based on silicon bulk micromachining fabrication has been developed and manufactured with the intention of evaluating the artifact both on a high precision coordinate measuring machine (CMM) and video-probe based measuring systems. This hybrid artifact has features that can be located by both a touch probe and a video probe system with a k=2 uncertainty of 0.4 {micro}m, more than twice as good as a glass reference artifact. We also present evidence that this uncertainty could be lowered to as little as 50 nm (k=2). While video-probe based systems are commonly used to inspect mesoscale mechanical components, a video-probe system's certified accuracy is generally much worse than its repeatability. To solve this problem, an artifact has been developed which can be calibrated using a commercially available high-accuracy tactile system and then be used to calibrate typical production vision-based measurement systems. This allows for error mapping to a higher degree of accuracy than is possible with a glass reference artifact. Details of the designed features and manufacturing process of the hybrid dimensional artifact are given and a comparison of the designed features to the measured features of the manufactured artifact is presented and discussed. Measurement results from vision and touch probe systems are compared and evaluated to determine the capability of the manufactured artifact to serve as a calibration tool for video-probe systems. An uncertainty analysis for calibration of the artifact using a CMM is presented.

  4. Increasing the efficiency of organic solar cells by photonic and electrostatic-field enhancements

    SciTech Connect (OSTI)

    Nalwa, Kanwar

    2012-11-03

    recombination of charge carriers. Thus it becomes imperative to understand the effect of processing conditions such as spin coating speed and drying rate on defect density and hence induced carrier recombination mechanism. In this study, It is shown that slow growth (longer drying time) of the active-layer leads to reduction of sub-bandgap traps by an order of magnitude as compared to fast grown active-layer. By coupling the experimental results with simulations, it is demonstrated that at one sun condition, slow grown device has bimolecular recombination as the major loss mechanism while in the fast grown device with high trap density, the trap assisted recombination dominates. It has been estimated that non-radiative recombination accounts nearly 50% of efficiency loss in modern OPVs. Generally, an external bias (electric field) is required to collect all the photogenerated charges and thus prevent their recombination. The motivation is to induce additional electric field in otherwise low mobility conjugated polymer based active layer by incorporating ferroelectric dipoles. This is expected to facilitate singlet exciton dissociation in polymer matrix and impede charge transfer exciton (CTE) recombination at polymer:fullerene interface. For the first time, it is shown that the addition of ferroelectric dipoles to modern bulk heterojunction (BHJ) can significantly improve exciton dissociation, resulting in a ~50% enhancement of overall solar cell efficiency. The devices also exhibit the unique ferroelectric-photovoltaic effect with polarization-controlled power conversion efficiency.

  5. Balance of optical, structural, and electrical properties of textured liquid phase crystallized Si solar cells

    SciTech Connect (OSTI)

    Preidel, V. Amkreutz, D.; Haschke, J.; Wollgarten, M.; Rech, B.; Becker, C.

    2015-06-14

    Liquid phase crystallized Si thin-film solar cells on nanoimprint textured glass substrates exhibiting two characteristic, but distinct different surface structures are presented. The impact of the substrate texture on light absorption, the structural Si material properties, and the resulting solar cell performance is analyzed. A pronounced periodic substrate texture with a vertical feature size of about 1 μm enables excellent light scattering and light trapping. However, it also gives rise to an enhanced Si crystal defect formation deteriorating the solar cell performance. In contrast, a random pattern with a low surface roughness of 45 nm allows for the growth of Si thin films being comparable to Si layers on planar reference substrates. Amorphous Si/crystalline Si heterojunction solar cells fabricated on the low-roughness texture exhibit a maximum open circuit voltage of 616 mV and internal quantum efficiency peak values exceeding 90%, resulting in an efficiency potential of 13.2%. This demonstrates that high quality crystalline Si thin films can be realized on nanoimprint patterned glass substrates by liquid phase crystallization inspiring the implementation of tailor-made nanophotonic light harvesting concepts into future liquid phase crystallized Si thin film solar cells on glass.

  6. Copper Mountain Solar Farm

    Broader source: Energy.gov [DOE]

    This b-roll shows a large-scale solar farm in Nevada that generates renewable solar energy using parabolic troughs, a form of concentrating solar power (CSP) technology, and photovoltaic technology.

  7. Smart Solar Marketing Strategies

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... e Cost. Consumers report high up-front and out-of-pocket costs and long payback periods deter them from installing solar ... While state solar pro- grams do not produce solar panels, ...

  8. Solar Neutrino Problem

    DOE R&D Accomplishments [OSTI]

    Davis, R. Jr.; Evans, J. C.; Cleveland, B. T.

    1978-04-28

    A summary of the results of the Brookhaven solar neutrino experiment is given and discussed in relation to solar model calculations. A review is given of the merits of various new solar neutrino detectors that were proposed.

  9. Solar Easements & Rights Laws

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Solar Recordation Act describes the procedures for filing a solar right through the County Clerk's Office. The property owner seeking the solar right must give advanced notice to the adjacent...

  10. ISOTOPIC MASS FRACTIONATION OF SOLAR WIND: EVIDENCE FROM FAST AND SLOW SOLAR WIND COLLECTED BY THE GENESIS MISSION

    SciTech Connect (OSTI)

    Heber, Veronika S.; Baur, Heinrich; Wieler, Rainer; Bochsler, Peter; McKeegan, Kevin D.; Neugebauer, Marcia; Reisenfeld, Daniel B.; Wiens, Roger C.

    2012-11-10

    NASA's Genesis space mission returned samples of solar wind collected over {approx}2.3 years. We present elemental and isotopic compositions of He, Ne, and Ar analyzed in diamond-like carbon targets from the slow and fast solar wind collectors to investigate isotopic fractionation processes during solar wind formation. The solar wind provides information on the isotopic composition for most volatile elements for the solar atmosphere, the bulk Sun and hence, on the solar nebula from which it formed 4.6 Ga ago. Our data reveal a heavy isotope depletion in the slow solar wind compared to the fast wind composition by 63.1 {+-} 2.1 per mille for He, 4.2 {+-} 0.5 per mille amu{sup -1} for Ne and 2.6 {+-} 0.5 per mille amu{sup -1} for Ar. The three Ne isotopes suggest that isotopic fractionation processes between fast and slow solar wind are mass dependent. The He/H ratios of the collected slow and fast solar wind samples are 0.0344 and 0.0406, respectively. The inefficient Coulomb drag model reproduces the measured isotopic fractionation between fast and slow wind. Therefore, we apply this model to infer the photospheric isotopic composition of He, Ne, and Ar from our solar wind data. We also compare the isotopic composition of oxygen and nitrogen measured in the solar wind with values of early solar system condensates, probably representing solar nebula composition. We interpret the differences between these samples as being due to isotopic fractionation during solar wind formation. For both elements, the magnitude and sign of the observed differences are in good agreement with the values predicted by the inefficient Coulomb drag model.

  11. Concentrating Solar Power Projects - Xina Solar One | Concentrating Solar

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Power | NREL Xina Solar One Abengoa has been selected by the Department of Energy (DOE) of South Africa to develop Xina Solar One, a 100 MW parabolic trough plant with a five-hour thermal energy storage system using molten salts. This project will form the largest solar complex in Africa together with Abengoa's plant KaXu Solar One that is currently under construction in the country. Xina Solar One was awarded to Abengoa in the third round of renewable energy projects organized by the

  12. Bulk Hauling Equipment for CHG | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Bulk Hauling Equipment for CHG Bulk Hauling Equipment for CHG This presentation by Don Baldwin of Hexagon Composites was given at the DOE Hydrogen Compression, Storage, and Dispensing Workshop in March 2013. csd_workshop_8_baldwin.pdf (1.2 MB) More Documents & Publications Tank Manufacturing, Testing, Deployment and Field Performance Hydrogen Delivery Roadmap US DRIVE Hydrogen Delivery Technical Team Roadmap

  13. Compound Solar Technology CompSolar | Open Energy Information

    Open Energy Info (EERE)

    Solar Technology CompSolar Jump to: navigation, search Name: Compound Solar Technology (CompSolar) Place: Jhunan, Taiwan Zip: 350 Sector: Solar Product: Producer of glass-based...

  14. Silicon Valley Solar Inc SV Solar | Open Energy Information

    Open Energy Info (EERE)

    Solar Inc SV Solar Jump to: navigation, search Name: Silicon Valley Solar Inc (SV Solar) Place: Santa Clara, California Zip: 95051 Sector: Solar Product: A US-based manufacturer of...

  15. First Solar AVSR Solar Ranch Technical Eligibility Re-Evaluation...

    Office of Environmental Management (EM)

    First Solar AVSR Solar Ranch Technical Eligibility Re-Evaluation Memo First Solar AVSR Solar Ranch Technical Eligibility Re-Evaluation Memo FirstSolarAVSRSolarRanchOneTechnic...

  16. SunShot Solar PV | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Solar PV SunShot Solar PV

  17. Carbon nanotubes grown on bulk materials and methods for fabrication

    DOE Patents [OSTI]

    Menchhofer, Paul A.; Montgomery, Frederick C.; Baker, Frederick S.

    2011-11-08

    Disclosed are structures formed as bulk support media having carbon nanotubes formed therewith. The bulk support media may comprise fibers or particles and the fibers or particles may be formed from such materials as quartz, carbon, or activated carbon. Metal catalyst species are formed adjacent the surfaces of the bulk support material, and carbon nanotubes are grown adjacent the surfaces of the metal catalyst species. Methods employ metal salt solutions that may comprise iron salts such as iron chloride, aluminum salts such as aluminum chloride, or nickel salts such as nickel chloride. Carbon nanotubes may be separated from the carbon-based bulk support media and the metal catalyst species by using concentrated acids to oxidize the carbon-based bulk support media and the metal catalyst species.

  18. Solar in Cold, Cloudy Climates

    Broader source: Energy.gov [DOE]

    Presentation delivered by Chuck Marken during the 2009 Northeastern Solar Cities Conference Solar Survey session.

  19. Tribal Solar Energy Partnerships

    Broader source: Energy.gov (indexed) [DOE]

    SOLAR ENERGY PARTNERSHIPS Chairman Timothy Williams - Fort Mojave Indian Tribe Perry Fontana - First Solar Fort Mojave Indian Reservation Fort Mojave Project Site Mohave Generating ...

  20. Making a Solar Oven

    K-12 Energy Lesson Plans and Activities Web site (EERE)

    Students make solar ovens. Student background information is provided. The expected outcome is that students will learn about solar energy transfer.

  1. Solar PV Incentive Programs

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PV Program (greater than 50 kW) * LIPA Solar Pioneer (homeowner) & Solar Entrepreneur (business - up to 50 kW) Research & Development collaborations on BOS cost ...

  2. Your Solar Home

    Broader source: Energy.gov [DOE]

    Solar Schoolhouse Education supplement for the Sacramento Bee to introduce solar to elementary school children and introduce the design and AD contest for local students.

  3. TVA- Solar Solutions Initiative

    Broader source: Energy.gov [DOE]

    Solar Solutions Initiative (SSI) is a pilot program that offers additional financial incentives for Solar PV systems participating in the Renewable Standard Offer program. Applications for new...

  4. Solar Photovoltaic SPECIFICATION, CHECKLIST...

    Energy Savers [EERE]

    Ready Home SOLAR PHOTOVOLTAIC SPECIFICATION, CHECKLIST AND GUIDE i Table of Contents About the Renewable Energy Ready Home Specifications Assumptions of the RERH Solar ...

  5. Solar Power Basics

    Broader source: Energy.gov [DOE]

    This video summarizes the process of generating solar electricity from photovoltaic and concentrating solar power technologies. Research, manufacturing, and usage across the United States is also...

  6. Scattering Solar Thermal Concentrators

    Office of Environmental Management (EM)

    sunshot DOEGO-102012-3669 * September 2012 MOTIVATION All thermal concentrating solar power (CSP) systems use solar tracking, which involves moving large mirror surfaces...

  7. Solar Energy Technologies Office

    Office of Energy Efficiency and Renewable Energy (EERE)

    In 2011, the Energy Department's Solar Energy Technologies Office (SETO) became the SunShot Initiative, a collaborative national effort that aggressively drives innovation to make solar energy...

  8. Solar Thermoelectric Energy Conversion

    Office of Energy Efficiency and Renewable Energy (EERE)

    Efficiencies of different types of solar thermoelectric generators were predicted using theoretical modeling and validated with measurements using constructed prototypes under different solar intensities

  9. Solar Contractor Licensing

    Broader source: Energy.gov [DOE]

    Hawaii offers several specialty licenses for solar contractors through Hawaii’s Department of Commerce and Consumer Affairs. The following specialty licenses are available: Solar Power Systems...

  10. Solar Energy in Alaska

    Broader source: Energy.gov (indexed) [DOE]

    Solar Energy in Alaska Photo by: Cassandra Cerny, GVEA David Lockard, Solar Program Manager Alaska Energy Authority BIA Providers Conference December 2, 2015 Alaska Energy ...

  11. Concentrating Solar Power

    SciTech Connect (OSTI)

    Solar Energy Technologies Program

    2010-09-28

    The fact sheet summarizes the goals and activities of the DOE Solar Energy Technologies Program efforts within its concentrating solar power subprogram.

  12. Solarity | Open Energy Information

    Open Energy Info (EERE)

    Solarity Jump to: navigation, search Name: Solarity Address: 200 Innovation Blvd Suite 260A Place: State College, Pennsylvania Zip: 16801 Region: Northeast - NY NJ CT PA Area...

  13. Solar Research at BNL

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    LIPA Issued Solar RFP on April 22, 2008 which sought: * 50 MW or more of capacity, energy, and Renewable Energy Credits (RECs) from solar photovoltaic generating ...

  14. Solar Affordable Housing Program

    Office of Environmental Management (EM)

    Solar Affordable Housing Program Why Solar for Tribes ... from a clean, renewable energy source Green jobs training ... with Other Tribal Communities The Great Plains Montana ...

  15. Rooftop Solar Challenge

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Rooftop Solar Challenge aims to reduce the cost of rooftop solar energy systems through improved permitting, financing, zoning, net metering, and interconnection processes for residential and...

  16. Solar Two Tower System

    Broader source: Energy.gov [DOE]

    In this photograph of a concentrating solar power (CSP) technology, stretched membrane heliostats with silvered polymer reflectors will be used as demonstration units at the Solar Two central...

  17. Solar collector

    DOE Patents [OSTI]

    Wilhelm, William G.

    1982-01-01

    The field of this invention is solar collectors, and more particularly, the invention pertains to a flat plate collector that employs high performance thin films. The solar collector of this invention overcomes several problems in this field, such as excessive hardware, cost and reliability, and other prior art drawbacks outlined in the specification. In the preferred form, the apparatus features a substantially rigid planar frame (14). A thin film window (42) is bonded to one planar side of the frame. An absorber (24) of laminate construction is comprised of two thin film layers (24a, 24b) that are sealed perimetrically. The layers (24a, 24b) define a fluid-tight planar envelope (24c) of large surface area to volume through which a heat transfer fluid flows. Absorber (24) is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  18. Solar skylight

    DOE Patents [OSTI]

    Adamson, James C.

    1984-01-01

    A reflective shutter rotates within a skylight housing in such a fashion as to control solar energy thereby providing a combination of heating, lighting, and ventilation. The skylight housing has three faces: a glazed southern face, a glazed northern face, and an open downwardly oriented face to the interior of the structure. Counter-weighted pivot arms support the shutter at either end causing the center of rotation to pass through the center of gravity. The shutter has three basic positions: In the first position, during the winter day, the shutter closes off the northern face, allowing solar energy to enter directly into the supporting structure providing heat gain and daylighting. In the second position, during the winter night, the shutter closes off the open face to the interior, providing insulation between the structure and the skylight housing. In the third position, during the non-heating season, the shutter closes off the southern face blocking unwanted heat gain but allowing diffuse northern light to penetrate for daylighting. In this last position, a means is provided for ventilating by natural convection. The apparatus can be operated either manually or by motor.

  19. Efficient organic solar cells using copper(I) iodide (CuI) hole transport layers

    SciTech Connect (OSTI)

    Peng, Ying; Yaacobi-Gross, Nir; Perumal, Ajay K.; Faber, Hendrik A.; Bradley, Donal D. C.; Anthopoulos, Thomas D. E-mail: t.anthopoulos@imperial.ac.uk; Vourlias, George; Patsalas, Panos A.; He, Zhiqun E-mail: t.anthopoulos@imperial.ac.uk

    2015-06-15

    We report the fabrication of high power conversion efficiency (PCE) polymer/fullerene bulk heterojunction (BHJ) photovoltaic cells using solution-processed Copper (I) Iodide (CuI) as hole transport layer (HTL). Our devices exhibit a PCE value of ∼5.5% which is equivalent to that obtained for control devices based on the commonly used conductive polymer poly(3,4-ethylenedioxythiophene): polystyrenesulfonate as HTL. Inverted cells with PCE >3% were also demonstrated using solution-processed metal oxide electron transport layers, with a CuI HTL evaporated on top of the BHJ. The high optical transparency and suitable energetics of CuI make it attractive for application in a range of inexpensive large-area optoelectronic devices.

  20. Solar Easements & Local Option Solar Rights Laws

    Broader source: Energy.gov [DOE]

    The New York General City, Town, and Village codes also allow local zoning districts to make regulations regarding solar access that provide for "the accommodation of solar energy systems and...