National Library of Energy BETA

Sample records for bulk heterojunction solar

  1. Solar Cells: Spin-Cast Bulk Heterojunction Solar Cells: A Dynamical...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Cells: Spin-Cast Bulk Heterojunction Solar Cells: A Dynamical Investigation Solar Cells: Spin-Cast Bulk Heterojunction Solar Cells: A Dynamical Investigation Print Wednesday,...

  2. The influence of molecular orientation on organic bulk heterojunction solar

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    cells The influence of molecular orientation on organic bulk heterojunction solar cells The influence of molecular orientation on organic bulk heterojunction solar cells Print Monday, 28 April 2014 09:03 Work done on ALS Beamlines 11.0.1.2, 7.3.3, and 5.3.2.2. reveals that preferential orientation of polymer chains with respect to the fullerene domain leads to a high photovoltaic performance. Featured on the cover of Nature Photonics 8. Article link

  3. Nanostructured Electrodes For Organic Bulk Heterojunction Solar Cells:

    Office of Scientific and Technical Information (OSTI)

    Model Study Using Carbon Nanotube Dispersed Polythiophene-fullerene Blend Devices (Journal Article) | SciTech Connect Nanostructured Electrodes For Organic Bulk Heterojunction Solar Cells: Model Study Using Carbon Nanotube Dispersed Polythiophene-fullerene Blend Devices Citation Details In-Document Search Title: Nanostructured Electrodes For Organic Bulk Heterojunction Solar Cells: Model Study Using Carbon Nanotube Dispersed Polythiophene-fullerene Blend Devices We test the feasibility of

  4. Nanostructured Electrodes For Organic Bulk Heterojunction Solar...

    Office of Scientific and Technical Information (OSTI)

    solar cells to improve their photovoltaic performance by enhancing their charge ... circuit current density and photovoltaic device efficiency by as much as approx10%. ...

  5. Solar Cells: Spin-Cast Bulk Heterojunction Solar Cells: A Dynamical

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Investigation Solar Cells: Spin-Cast Bulk Heterojunction Solar Cells: A Dynamical Investigation Solar Cells: Spin-Cast Bulk Heterojunction Solar Cells: A Dynamical Investigation Print Wednesday, 03 April 2013 13:32 Spin-coating is extensively used in the lab-based manufacturing of organic solar cells, including most of the record-setting cells. Aram Amassian and co-workers report in this study the first direct observation of photoactive layer formation as it occurs during spin-coating. The

  6. "Plastic" Solar Cells: Self-Assembly of Bulk Heterojunction

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nano-Materials by Spontaneous Phase Separation | MIT-Harvard Center for Excitonics "Plastic" Solar Cells: Self-Assembly of Bulk Heterojunction Nano-Materials by Spontaneous Phase Separation October 20, 2009 at 3pm/36-428 Alan Heeger Department of Chemistry, University of California, Santa Barbara heeger abstract: Solar cells - Power from the Sun - can provide and must provide - a significant contribution to our future energy needs. The challenge is clear; we must create the

  7. Molecular helices as electron acceptors in high-performance bulk heterojunction solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yu M. Zhong; Nam, Chang -Yong; Trinh, M. Tuan; Chen, Rongsheng; Purdum, Geoffrey E.; Khlyabich, Petr P.; Sezen, Melda; Oh, Seokjoon; Zhu, Haiming; Fowler, Brandon; et al

    2015-09-18

    Despite numerous organic semiconducting materials synthesized for organic photovoltaics in the past decade, fullerenes are widely used as electron acceptors in highly efficient bulk-heterojunction solar cells. None of the non-fullerene bulk heterojunction solar cells have achieved efficiencies as high as fullerene-based solar cells. Design principles for fullerene-free acceptors remain unclear in the field. Here we report examples of helical molecular semiconductors as electron acceptors that are on par with fullerene derivatives in efficient solar cells. We achieved an 8.3% power conversion efficiency in a solar cell, which is a record high for non-fullerene bulk heterojunctions. Femtosecond transient absorption spectroscopy revealedmore » both electron and hole transfer processes at the donor–acceptor interfaces. Atomic force microscopy reveals a mesh-like network of acceptors with pores that are tens of nanometres in diameter for efficient exciton separation and charge transport. As a result, this study describes a new motif for designing highly efficient acceptors for organic solar cells.« less

  8. Molecular helices as electron acceptors in high-performance bulk heterojunction solar cells

    SciTech Connect (OSTI)

    Yu M. Zhong; Nam, Chang -Yong; Trinh, M. Tuan; Chen, Rongsheng; Purdum, Geoffrey E.; Khlyabich, Petr P.; Sezen, Melda; Oh, Seokjoon; Zhu, Haiming; Fowler, Brandon; Zhang, Boyuan; Wang, Wei; Sfeir, Matthew Y.; Black, Charles T.; Steigerwald, Michael L.; Loo, Yueh -Lin; Ng, Fay; Zhu, X. -Y.; Nuckolls, Colin

    2015-09-18

    Despite numerous organic semiconducting materials synthesized for organic photovoltaics in the past decade, fullerenes are widely used as electron acceptors in highly efficient bulk-heterojunction solar cells. None of the non-fullerene bulk heterojunction solar cells have achieved efficiencies as high as fullerene-based solar cells. Design principles for fullerene-free acceptors remain unclear in the field. Here we report examples of helical molecular semiconductors as electron acceptors that are on par with fullerene derivatives in efficient solar cells. We achieved an 8.3% power conversion efficiency in a solar cell, which is a record high for non-fullerene bulk heterojunctions. Femtosecond transient absorption spectroscopy revealed both electron and hole transfer processes at the donor–acceptor interfaces. Atomic force microscopy reveals a mesh-like network of acceptors with pores that are tens of nanometres in diameter for efficient exciton separation and charge transport. As a result, this study describes a new motif for designing highly efficient acceptors for organic solar cells.

  9. High-Performance All Air-Processed Polymer-Fullerene Bulk Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Black, C.T.; Nam, C.-Y.; Su, D.

    2009-10-23

    High photovoltaic device performance is demonstrated in ambient-air-processed bulk heterojunction solar cells having an active blend layer of organic poly(3-hexylthiophene) (P3HT): [6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM), with power conversion efficiencies as high as 4.1%, which is comparable to state-of-the-art bulk heterojunction devices fabricated in air-free environments. High-resolution transmission electron microscopy is combined with detailed analysis of electronic carrier transport in order to quantitatively understand the effects of oxygen exposure and different thermal treatments on electronic conduction through the highly nanostructured active blend network. Improvement in photovoltaic device performance by suitable post-fabrication thermal processing results from the reduced oxygen charge trap density in the active blend layer and is consistent with a corresponding slight increase in thickness of an {approx}4 nm aluminum oxide hole-blocking layer present at the electron-collecting contact interface.

  10. The influence of molecular orientation on organic bulk heterojunction...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on organic bulk heterojunction solar cells The influence of molecular orientation on organic bulk heterojunction solar cells Print Monday, 28 April 2014 09:03 Work done on ALS...

  11. Effects of Magnetic Nanoparticles and External Magnetostatic Field on the Bulk Heterojunction Polymer Solar Cells

    SciTech Connect (OSTI)

    Wang, Kai; Yi, Chao; Liu, Chang; Hu, Xiaowen; Chuang, Steven; Gong, Xiong

    2015-03-18

    The price of energy to separate tightly bound electron-hole pair (or charge-transfer state) and extract freely movable charges from low-mobility materials represents fundamental losses for many low-cost photovoltaic devices. In bulk heterojunction (BHJ) polymer solar cells (PSCs), approximately 50% of the total efficiency lost among all energy loss pathways is due to the photogenerated charge carrier recombination within PSCs and low charge carrier mobility of disordered organic materials. To address these issues, we introduce magnetic nanoparticles (MNPs) and orientate these MNPS within BHJ composite by an external magnetostatic field. Over 50% enhanced efficiency was observed from BHJ PSCs incorporated with MNPs and an external magnetostatic field alignment when compared to the control BHJ PSCs. The optimization of BHJ thin film morphology, suppression of charge carrier recombination, and enhancement in charge carrier collection result in a greatly increased short-circuit current density and fill factor, as a result, enhanced power conversion efficiency.

  12. Polydimethylsiloxane as a Macromolecular Additive for Enhanced Performance of Molecular Bulk Heterojunction Organic Solar Cells

    SciTech Connect (OSTI)

    Graham, Kenneth R.; Mei, Jianguo; Stalder, Romain; Shim, Jae Won; Cheun, Hyeunseok; Steffy, Fred; So, Franky; Kippelen, Bernard; Reynolds, John R.

    2011-03-15

    The effect of the macromolecular additive, polydimethylsiloxane (PDMS), on the performance of solution processed molecular bulk heterojunction solar cells is investigated, and the addition of PDMS is shown to improve device power conversion efficiency by ~70% and significantly reduce cell-to-cell variation, from a power conversion efficiency of 1.25 0.37% with no PDMS to 2.16 0.09% upon the addition of 0.1 mg/mL PDMS to the casting solution. The cells are based on a thiophene and isoindigo containing oligomer as the electron donor and [6,6]-phenyl-C61 butyric acid methyl ester (PC61BM) as the electron acceptor. PDMS is shown to have a strong influence on film morphology, with a significant decrease in film roughness and feature size observed. The morphology change leads to improved performance parameters, most notably an increase in the short circuit current density from 4.3 to 6.8 mA/cm2 upon addition of 0.1 mg/mL PDMS. The use of PDMS is of particular interest, as this additive appears frequently as a lubricant in plastic syringes commonly used in device fabrication; therefore, PDMS may unintentionally be incorporated into device active layers.

  13. Effects of Magnetic Nanoparticles and External Magnetostatic Field on the Bulk Heterojunction Polymer Solar Cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Kai; Yi, Chao; Liu, Chang; Hu, Xiaowen; Chuang, Steven; Gong, Xiong

    2015-03-18

    The price of energy to separate tightly bound electron-hole pair (or charge-transfer state) and extract freely movable charges from low-mobility materials represents fundamental losses for many low-cost photovoltaic devices. In bulk heterojunction (BHJ) polymer solar cells (PSCs), approximately 50% of the total efficiency lost among all energy loss pathways is due to the photogenerated charge carrier recombination within PSCs and low charge carrier mobility of disordered organic materials. To address these issues, we introduce magnetic nanoparticles (MNPs) and orientate these MNPS within BHJ composite by an external magnetostatic field. Over 50% enhanced efficiency was observed from BHJ PSCs incorporated withmore » MNPs and an external magnetostatic field alignment when compared to the control BHJ PSCs. The optimization of BHJ thin film morphology, suppression of charge carrier recombination, and enhancement in charge carrier collection result in a greatly increased short-circuit current density and fill factor, as a result, enhanced power conversion efficiency.« less

  14. Efficient solution-processed small molecule: Cadmium selenide quantum dot bulk heterojunction solar cells

    SciTech Connect (OSTI)

    Gupta, Vinay; Department of Physics, University of California, Santa Barbara, California 93106 ; Upreti, Tanvi; Chand, Suresh

    2013-12-16

    We report bulk heterojunction solar cells based on blends of solution-processed small molecule [7,7?-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b?]dithiophene-2,6-diyl) bis(6-fluoro-4-(5?-hexyl-[2,2?-bithiophen]-5yl)benzo[c] [1,2,5] thiadiazole)] p-DTS(FBTTh{sub 2}){sub 2}: Cadmium Selenide (CdSe) (70:30, 60:40, 50:50, and 40:60) in the device configuration: Indium Tin Oxide /poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/p-DTS(FBTTh{sub 2}){sub 2}: CdSe/Ca/Al. The optimized ratio of p-DTS(FBTTh{sub 2}){sub 2}:CdSe::60:40 leads to a short circuit current density (J{sub sc})?=?5.45?mA/cm{sup 2}, open circuit voltage (V{sub oc})?=?0.727?V, and fill factor (FF)?=?51%, and a power conversion efficiency?=?2.02% at 100 mW/cm{sup 2} under AM1.5G illumination. The J{sub sc} and FF are sensitive to the ratio of p-DTS(FBTTh{sub 2}){sub 2}:CdSe, which is a crucial factor for the device performance.

  15. Thermal annealing study on P3HT: PCBM based bulk heterojunction organic solar cells using impedance spectroscopy

    SciTech Connect (OSTI)

    Gollu, Sankara Rao; Sharma, Ramakant G, Srinivas Gupta, Dipti

    2014-10-15

    Recently, Thermal annealing is an important process for bulk heterojunction organic solar cells (BHJ OSCs) to improve the device efficiency and performance of the organic solar cells. Here in, we have examined the changes in the efficiency and morphology of P3HT: PCBM film according to the thermal annealing temperature to find the changes during the annealing process by measuring the optical absorption, atomic force microscope and X-ray diffraction. We also investigated the effect of different annealing process conditions (without, pre- and post-annealing) on the device performance of the inverted bulk heterojunction organic solar cells consist the structure of ITO/ ZnO / P3HT: PCBM / MoO{sub 3}/ Al by measuring AC impedance characteristics. Particularly, the power conversion efficiency (PCE), crystalline nature of the polymer, light absorption and the surface smoothness of P3HT: PCBM films are significantly improved after the annealing process. These results indicated the improvement in terms of PCE, interface smoothness between the P3HT: PCBM and MoO{sub 3} layers of the post annealed device originated from the decrease of series resistance between P3HT: PCBM layer and Al electrodes, which could be due to decrease in the effective life time of charge carriers.

  16. Heterojunction solar cell

    DOE Patents [OSTI]

    Olson, Jerry M.

    1994-01-01

    A high-efficiency single heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. The conversion effiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer.

  17. Heterojunction solar cell

    DOE Patents [OSTI]

    Olson, J.M.

    1994-08-30

    A high-efficiency single heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer. 1 fig.

  18. Perovskite solar cells with near 100% internal quantum efficiency based on large single crystalline grains and vertical bulk heterojunctions

    SciTech Connect (OSTI)

    Yang, Bin; Dyck, Ondrej; Poplawsky, Jonathan; Keum, Jong; Puretzky, Alexander; Das, Sanjib; Ivanov, Ilia; Rouleau, Christopher; Duscher, Gerd; Geohegan, David; Xiao, Kai

    2015-07-09

    Grain boundaries (GBs) as defects in the crystal lattice detrimentally impact the power conversion efficiency (PCE) of polycrystalline solar cells, particularly in recently emerging hybrid perovskites where non-radiative recombination processes lead to significant carrier losses. Here, the beneficial effects of activated vertical GBs are demonstrated by first growing large, vertically-oriented methylammonium lead tri-iodide (CH3NH3PbI3) single-crystalline grains. We show that infiltration of p-type doped 2 -7,7 -tetrakis(N,Ndi-p-methoxyphenylamine)-9,9-spirobifluorene (Spiro-OMeTAD) into CH3NH3PbI3 films along the GBs creates space charge regions to suppress non-radiative recombination and enhance carrier collection efficiency. Solar cells with such activated GBs yielded average PCE of 16.3 0.9%, which are among the best solution-processed perovskite devices. As an important alternative to growing ideal CH3NH3PbI3 single crystal films, which is difficult to achieve for such fast-crystallizing perovskites, activating GBs paves a way to design a new type of bulk heterojunction hybrid perovskite photovoltaics toward theoretical maximum PCE.

  19. Perovskite solar cells with near 100% internal quantum efficiency based on large single crystalline grains and vertical bulk heterojunctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yang, Bin; Dyck, Ondrej; Poplawsky, Jonathan; Keum, Jong; Puretzky, Alexander; Das, Sanjib; Ivanov, Ilia; Rouleau, Christopher; Duscher, Gerd; Geohegan, David; et al

    2015-01-01

    Grain boundaries (GBs) as defects in the crystal lattice detrimentally impact the power conversion efficiency (PCE) of polycrystalline solar cells, particularly in recently emerging hybrid perovskites where non-radiative recombination processes lead to significant carrier losses. Here, the beneficial effects of activated vertical GBs are demonstrated by first growing large, vertically-oriented methylammonium lead tri-iodide (CH3NH3PbI3) single-crystalline grains. We show that infiltration of p-type doped 2 -7,7 -tetrakis(N,Ndi-p-methoxyphenylamine)-9,9-spirobifluorene (Spiro-OMeTAD) into CH3NH3PbI3 films along the GBs creates space charge regions to suppress non-radiative recombination and enhance carrier collection efficiency. Solar cells with such activated GBs yielded average PCE of 16.3 ± 0.9%, whichmore » are among the best solution-processed perovskite devices. As an important alternative to growing ideal CH3NH3PbI3 single crystal films, which is difficult to achieve for such fast-crystallizing perovskites, activating GBs paves a way to design a new type of bulk heterojunction hybrid perovskite photovoltaics toward theoretical maximum PCE.« less

  20. Enhanced performance of polymer:fullerene bulk heterojunction solar cells upon graphene addition

    SciTech Connect (OSTI)

    Robaeys, Pieter Dierckx, Wouter; Dexters, Wim; Spoltore, Donato; Drijkoningen, Jeroen; Bonaccorso, Francesco; Bourgeois, Emilie; D'Haen, Jan; Haenen, Ken; Manca, Jean V.; Nesladek, Milos; Liesenborgs, Jori; Van Reeth, Frank; Lombardo, Antonio; Ferrari, Andrea C.

    2014-08-25

    Graphene has potential for applications in solar cells. We show that the short circuit current density of P3HT (Poly(3-hexylthiophene-2,5-diyl):PCBM((6,6)-Phenyl C61 butyric acid methyl ester) solar cells is enhanced by 10% upon the addition of graphene, with a 15% increase in the photon to electric conversion efficiency. We discuss the performance enhancement by studying the crystallization of P3HT, as well as the electrical transport properties. We show that graphene improves the balance between electron and hole mobilities with respect to a standard P3HT:PCBM solar cell.

  1. Factors influencing photocurrent generation in organic bulk heterojunction

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    solar cells: interfacial energetics and blend microstructure | MIT-Harvard Center for Excitonics Factors influencing photocurrent generation in organic bulk heterojunction solar cells: interfacial energetics and blend microstructure April 29, 2009 at 3pm/36-428 Jenny Nelson Department of Physics Imperial College London jenny-nelson_000 abstract: The efficiency of photocurrent generation in conjugated polymer:small molecule blend solar is strongly influenced both by the energy level alignment

  2. Organic hybrid planar-nanocrystalline bulk heterojunctions

    DOE Patents [OSTI]

    Forrest, Stephen R.; Yang, Fan

    2011-03-01

    A photosensitive optoelectronic device having an improved hybrid planar bulk heterojunction includes a plurality of photoconductive materials disposed between the anode and the cathode. The photoconductive materials include a first continuous layer of donor material and a second continuous layer of acceptor material. A first network of donor material or materials extends from the first continuous layer toward the second continuous layer, providing continuous pathways for conduction of holes to the first continuous layer. A second network of acceptor material or materials extends from the second continuous layer toward the first continuous layer, providing continuous pathways for conduction of electrons to the second continuous layer. The first network and the second network are interlaced with each other. At least one other photoconductive material is interspersed between the interlaced networks. This other photoconductive material or materials has an absorption spectra different from the donor and acceptor materials.

  3. Organic hybrid planar-nanocrystalline bulk heterojunctions

    DOE Patents [OSTI]

    Forrest, Stephen R.; Yang, Fan

    2013-04-09

    A photosensitive optoelectronic device having an improved hybrid planar bulk heterojunction includes a plurality of photoconductive materials disposed between the anode and the cathode. The photoconductive materials include a first continuous layer of donor material and a second continuous layer of acceptor material. A first network of donor material or materials extends from the first continuous layer toward the second continuous layer, providing continuous pathways for conduction of holes to the first continuous layer. A second network of acceptor material or materials extends from the second continuous layer toward the first continuous layer, providing continuous pathways for conduction of electrons to the second continuous layer. The first network and the second network are interlaced with each other. At least one other photoconductive material is interspersed between the interlaced networks. This other photoconductive material or materials has an absorption spectra different from the donor and acceptor materials.

  4. p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells

    DOE Patents [OSTI]

    Irwin, Michael D; Buchholz, Donald B; Marks, Tobin J; Chang, Robert P. H.

    2014-11-25

    The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.

  5. High open-circuit voltage small-molecule p-DTS(FBTTh 2 )2.ICBA bulk heterojunction solar cells – morphology, excited-state dynamics, and photovoltaic performance

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ko Kyaw, Aung Ko; Gehrig, Dominik; Zhang, Jie; Huang, Ye; Bazan, Guillermo C.; Laquai, Frédéric; Nguyen, Thuc -Quyen

    2014-11-27

    The photovoltaic performance of bulk heterojunction solar cells using the solution-processable small molecule donor 7,7'-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b']dithiophene-2,6-diyl)bis(6-fluoro-4-(5'-hexyl-[2,2'-bithiophene]-5-yl)benzo[c][1,2,5]thiadiazole) (p-DTS(FBTTh2)2 in combination with indene-C60 bis-adduct (ICBA) as an acceptor is systematically optimized by altering the processing conditions. A high open-circuit voltage of 1 V, more than 0.2 V higher than that of a p-DTS(FBTTh2)2:PC70BM blend, is achieved. However, the power conversion efficiency remains around 5% and thus is lower than ~8% previously reported for p-DTS(FBTTh2)2:PC70BM. Transient absorption (TA) pump–probe spectroscopy over a wide spectral (Vis-NIR) and dynamic (fs to μs) range in combination with multivariate curve resolution analysis of the TA data reveals thatmore » generation of free charges is more efficient in the blend with PC70BM as an acceptor. In contrast, blends with ICBA create more coulombically bound interfacial charge transfer (CT) states, which recombine on the sub-nanosecond timescale by geminate recombination. Furthermore, the ns to μs charge carrier dynamics in p-DTS(FBTTh2)2:ICBA blends are only weakly intensity dependent implying a significant contribution of recombination from long-lived CT states and trapped charges, while those in p-DTS(FBTTh2)2:PC70BM decay via an intensity-dependent recombination mechanism indicating that spatially separated (free) charge carriers are observed, which can be extracted as photocurrent from the device.« less

  6. Mixed ternary heterojunction solar cell

    DOE Patents [OSTI]

    Chen, Wen S.; Stewart, John M.

    1992-08-25

    A thin film heterojunction solar cell and a method of making it has a p-type layer of mixed ternary I-III-VI.sub.2 semiconductor material in contact with an n-type layer of mixed binary II-VI semiconductor material. The p-type semiconductor material includes a low resistivity copper-rich region adjacent the back metal contact of the cell and a composition gradient providing a minority carrier mirror that improves the photovoltaic performance of the cell. The p-type semiconductor material preferably is CuInGaSe.sub.2 or CuIn(SSe).sub.2.

  7. Effect of simultaneous electrical and thermal treatment on the performance of bulk heterojunction organic solar cell blended with organic salt

    SciTech Connect (OSTI)

    Sabri, Nasehah Syamin; Yap, Chi Chin; Yahaya, Muhammad; Salleh, Muhamad Mat

    2013-11-27

    This work presents the influence of simultaneous electrical and thermal treatment on the performance of organic solar cell blended with organic salt. The organic solar cells were composed of indium tin oxide as anode, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]: (6,6)-phenyl-C61 butyric acid methyl ester: tetrabutylammonium hexafluorophosphate blend as organic active layer and aluminium as cathode. The devices underwent a simultaneous fixed-voltage electrical and thermal treatment at different temperatures of 25, 50 and 75 °C. It was found that photovoltaic performance improved with the thermal treatment temperature. Accumulation of more organic salt ions in the active layer leads to broadening of p-n doped regions and hence higher built-in electric field across thin intrinsic layer. The simultaneous electrical and thermal treatment has been shown to be able to reduce the electrical treatment voltage.

  8. Bulk- and layer-heterojunction phototransistors based on poly

    Office of Scientific and Technical Information (OSTI)

    [2-methoxy-5-(2'-ethylhexyloxy-p-phenylenevinylene)] and PbS quantum dot hybrids (Journal Article) | SciTech Connect Bulk- and layer-heterojunction phototransistors based on poly [2-methoxy-5-(2'-ethylhexyloxy-p-phenylenevinylene)] and PbS quantum dot hybrids Citation Details In-Document Search Title: Bulk- and layer-heterojunction phototransistors based on poly [2-methoxy-5-(2'-ethylhexyloxy-p-phenylenevinylene)] and PbS quantum dot hybrids The responsivity (R) of a thin film photodetector

  9. Heterojunction solar cell with passivated emitter surface

    DOE Patents [OSTI]

    Olson, J.M.; Kurtz, S.R.

    1994-05-31

    A high-efficiency heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer. 1 fig.

  10. Heterojunction solar cell with passivated emitter surface

    DOE Patents [OSTI]

    Olson, Jerry M.; Kurtz, Sarah R.

    1994-01-01

    A high-efficiency heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer.

  11. Method of fabricating an optoelectronic device having a bulk heterojunction

    DOE Patents [OSTI]

    Shtein, Max (Ann Arbor, MI); Yang, Fan (Princeton, NJ); Forrest, Stephen R. (Princeton, NJ)

    2008-10-14

    A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.

  12. Indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom; Ghosh, Amal K.

    1982-12-28

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  13. Recent progress in the morphology of bulk heterojunction photovoltaics

    SciTech Connect (OSTI)

    Brady, Michael A.; Su, Gregory M.; Chabinyc, Michael L.

    2011-10-06

    A review of current research in the characterization of the morphology of semiconducting polymer:fullerene bulk heterojunctions (BHJs) is presented. BHJs are complex blends of polymers and fullerenes with nanostructures that are highly dependent on materials, processing conditions, and post-treatments to films. Recent work on the study of the morphology of BHJs is surveyed. Emphasis is placed on emerging work on BHJs of poly(3-hexylthiophene), P3HT, and [6,6]-phenyl-C61-butyric acid methyl ester, PCBM, along with BHJs of donoracceptor polymers that have high power conversion efficiency.

  14. Method of fabricating an optoelectronic device having a bulk heterojunction

    DOE Patents [OSTI]

    Shtein, Max (Princeton, NJ); Yang, Fan (Princeton, NJ); Forrest, Stephen R. (Princeton, NJ)

    2008-09-02

    A method of fabricating an organic optoelectronic device having a bulk heterojunction comprises the steps of: depositing a first layer over a first electrode by organic vapor phase deposition, wherein the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer, wherein the interface of the second layer on the first layer forms a bulk heterojunction; and depositing a second electrode over the second layer to form the optoelectronic device. In another embodiment, a first layer having protrusions is deposited over the first electrode, wherein the first layer comprises a first organic small molecule material. For example, when the first layer is an electron donor layer, the first electrode is an anode, the second layer is an electron acceptor layer, and the second electrode is a cathode. As a further example, when the first layer is an electron acceptor layer, the first electrode is a cathode, the second layer is an electron donor layer, and the second electrode is an anode.

  15. Modeling of Silicon Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Luppina, P.; Lugli, P.; Goodnick, S.

    2015-06-14

    Here we present modeling results on crystalline Si/amorphous Si (a-Si) heterojunction solar cells using Sentaurus including various models for defect states in the a-Si barriers, as well as explicit models for the ITO emitter contact. We investigate the impact of the band offsets and barrier heights of the a-Si/c-Si interface, particularly in terms of the open circuit voltage. It is also shown that the solar cell performance is sensitively dependent on the quality of the a-Si in terms of defect states and their distribution, particularly on the emitter side. Finally, we have investigate the role of tunneling and thermionic emission across the heterointerface in terms of transport from the Si to the ITO contact layer

  16. Heterojunction for Multi-Junction Solar Cells - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Photovoltaic Solar Photovoltaic Advanced Materials Advanced Materials Find More Like This Return to Search Heterojunction for Multi-Junction Solar Cells Sandia National Laboratories Contact SNL About This Technology Publications: PDF Document Publication Market Sheet (1,250 KB) Technology Marketing SummarySandia National Laboratories has created a semiconductor p-n heterojunction for use in forming a photodetector that has applications for use in a multi-junction solar cell and detecting light

  17. GaP/Si heterojunction Solar Cells

    SciTech Connect (OSTI)

    Saive, R.; Chen, C.; Emmer, H.; Atwater, H.

    2015-05-11

    Improving the efficiency of solar cells requires the introduction of novel device concepts. Recent developments have shown that in Si solar cell technology there is still room for tremendous improvement. Using the heterojunction with intrinsic thin layer (HIT) approach 25.6 % power conversion efficiency was achieved. However, a-Si as a window and passivation layer comes with disadvantages as a-Si shows low conductivity and high parasitic absorption. Therefore, it is likely that using a crystalline material as window layer with high band gab and high mobility can further improve efficiency. We have studied GaP grown by MOCVD on Si with (001) and (112) orientation. We obtained crystalline layers with carrier mobility around 100 cm2/Vs and which passivate Si as confirmed by carrier lifetime measurements. We performed band alignment studies by X-ray photoelectron spectroscopy yielding a valence band offset of 0.3 eV. Comparing this value with the Schottky-model leads to an interface dipole of 0.59 eV. The open circuit voltage increases with increasing doping and is consistent with the theoretical open circuit voltage deduced from work function difference and interface dipole. We obtain an open circuit voltage of 0.38 V for n-doped GaP with doping levels in the order of 10^17 1/cm^3. In our next steps we will increase the doping level further in order to gain higher open circuit voltage. We will discuss the implications of these findings for GaP/Si heterojunction solar cells.

  18. High open-circuit voltage small-molecule p-DTS(FBTTh 2 )2.ICBA bulk heterojunction solar cells – morphology, excited-state dynamics, and photovoltaic performance

    SciTech Connect (OSTI)

    Ko Kyaw, Aung Ko; Gehrig, Dominik; Zhang, Jie; Huang, Ye; Bazan, Guillermo C.; Laquai, Frédéric; Nguyen, Thuc -Quyen

    2014-11-27

    The photovoltaic performance of bulk heterojunction solar cells using the solution-processable small molecule donor 7,7'-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b']dithiophene-2,6-diyl)bis(6-fluoro-4-(5'-hexyl-[2,2'-bithiophene]-5-yl)benzo[c][1,2,5]thiadiazole) (p-DTS(FBTTh2)2 in combination with indene-C60 bis-adduct (ICBA) as an acceptor is systematically optimized by altering the processing conditions. A high open-circuit voltage of 1 V, more than 0.2 V higher than that of a p-DTS(FBTTh2)2:PC70BM blend, is achieved. However, the power conversion efficiency remains around 5% and thus is lower than ~8% previously reported for p-DTS(FBTTh2)2:PC70BM. Transient absorption (TA) pump–probe spectroscopy over a wide spectral (Vis-NIR) and dynamic (fs to μs) range in combination with multivariate curve resolution analysis of the TA data reveals that generation of free charges is more efficient in the blend with PC70BM as an acceptor. In contrast, blends with ICBA create more coulombically bound interfacial charge transfer (CT) states, which recombine on the sub-nanosecond timescale by geminate recombination. Furthermore, the ns to μs charge carrier dynamics in p-DTS(FBTTh2)2:ICBA blends are only weakly intensity dependent implying a significant contribution of recombination from long-lived CT states and trapped charges, while those in p-DTS(FBTTh2)2:PC70BM decay via an intensity-dependent recombination mechanism indicating that spatially separated (free) charge carriers are observed, which can be extracted as photocurrent from the device.

  19. The effect of confinement on the crystalline microstructure of polymer: fullerene bulk heterojunctions

    SciTech Connect (OSTI)

    Ashraf, A.; Dissanayake, D. M. N. M.; Eisaman, M. D.

    2015-07-01

    We investigate the effect of confinement on the coherence length and the crystalline microstructure of the polymer component of polymer: fullerene bulk heterojunction thin films using grazing incidence wide angle x-ray scattering. We find that the polymer crystallite size decreases and the alignment of the molecules along the surface normal increases, as the thin-film thickness is reduced from 920nm to < 20nm and approaches the thin-film confinement regime. Furthermore, we find that the polymer crystallite size near the surface (air interface) is lower than the crystallite size in the bulk or the bottom (substrate interface) of bulk heterojunction films thicker than the confinement regime. Variation in polymer crystallite size can cause changes in charge carrier mobility and recombination rates, which in turn affect the performance of bulk heterojunction thin film devices such as photovoltaics and photodetectors

  20. The effect of confinement on the crystalline microstructure of polymer: fullerene bulk heterojunctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ashraf, A.; Dissanayake, D. M. N. M.; Eisaman, M. D.

    2015-07-01

    We investigate the effect of confinement on the coherence length and the crystalline microstructure of the polymer component of polymer: fullerene bulk heterojunction thin films using grazing incidence wide angle x-ray scattering. We find that the polymer crystallite size decreases and the alignment of the molecules along the surface normal increases, as the thin-film thickness is reduced from 920nm to < 20nm and approaches the thin-film confinement regime. Furthermore, we find that the polymer crystallite size near the surface (air interface) is lower than the crystallite size in the bulk or the bottom (substrate interface) of bulk heterojunction films thickermore » than the confinement regime. Variation in polymer crystallite size can cause changes in charge carrier mobility and recombination rates, which in turn affect the performance of bulk heterojunction thin film devices such as photovoltaics and photodetectors« less

  1. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-01-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n{sup ++} Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  2. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    SciTech Connect (OSTI)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  3. Final Report - High efficiency heterojunction solar cell on 30μm...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    c-Si substrates using novel exfoliation technology Final Report - High efficiency heterojunction solar cell on 30m thin c-Si substrates using novel exfoliation technology ...

  4. Method for forming indium oxide/n-silicon heterojunction solar cells

    DOE Patents [OSTI]

    Feng, Tom; Ghosh, Amal K.

    1984-03-13

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  5. In situ current voltage measurements for optimization of a novel fullerene acceptor in bulk heterojunction photovoltaics

    SciTech Connect (OSTI)

    Shuttle, Christopher G.; Treat, Neil D.; Fan, Jian; Varotto, Alessandro; Hawker, Craig J.; Wudl, Fred; Chabinyc, Michael L.

    2011-10-31

    The evaluation of the power conversion efficiency (PCE) of new materials for organic bulk heterojunction (BHJ) photovoltaics is difficult due to the large number of processing parameters possible. An efficient procedure to determine the optimum conditions for thermal treatment of polymer-based bulk heterojunction photovoltaic devices using in situ current-voltage measurements is presented. The performance of a new fullerene derivative, 1,9-dihydro-64,65-dihexyloxy-1,9-(methano[1,2] benzomethano)fullerene[60], in BHJ photovolatics with poly(3-hexylthiophene) (P3HT) was evaluated using this methodology. The device characteristics of BHJs obtained from the in situ method were found to be in good agreement with those from BHJs annealed using a conventional process. This fullerene has similar performance to 1-(3-methoxycarbonyl)propyl-1-phenyl-[6,6]-methano fullerene in BHJs with P3HT after thermal annealing. For devices with thickness of 70 nm, the short circuit current was 6.24 mA/cm with a fill factor of 0.53 and open circuit voltage of 0.65 V. The changes in the current-voltage measurements during thermal annealing suggest that the ordering process in P3HT dominates the improvement in power conversion efficiency.

  6. Quantitative comparison of organic photovoltaic bulk heterojunction photostability under laser illumination

    SciTech Connect (OSTI)

    Lesoine, Michael D.; Bobbitt, Jonathan M.; Carr, John A.; Elshobaki, Moneim; Chaudhary, Sumit; Smith, Emily A.

    2014-11-20

    The photostability of bulk heterojunction organic photovoltaic films containing a polymer donor and a fullerene-derivative acceptor was examined using resonance Raman spectroscopy and controlled laser power densities. The polymer donors were poly(3-hexylthiophene-2,5-diyl) (P3HT), poly[[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl] (PCDTBT), or poly({4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl}{3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl}) (PTB7). Four sample preparation methods were studied: (i) thin or (ii) thick films with fast solvent evaporation under nitrogen, (iii) thick films with slow solvent evaporation under nitrogen, and (iv) thin films dried under nitrogen followed by thermal annealing. Polymer order was assessed by monitoring a Raman peak’s full width at half-maximum and location as a function of illumination time and laser power densities from 2.5 × 103 to 2.5 × 105 W cm–2. Resonance Raman spectroscopy measurements show that before prolonged illumination, PCDTBT and PTB7 have the same initial order for all preparation conditions, while P3HT order improves with slow solvent drying or thermal annealing. All films exhibited changes to bulk heterojunction structure with 2.5 × 105 Wcm–2 laser illumination as measured by resonance Raman spectroscopy, and atomic force microscopy images show evidence of sample heating that affects the polymer over an area greater than the illumination profile. Furthermore, photostability data are important for proper characterization by techniques involving illumination and the development of devices suitable for real-world applications.

  7. Quantitative comparison of organic photovoltaic bulk heterojunction photostability under laser illumination

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lesoine, Michael D.; Bobbitt, Jonathan M.; Carr, John A.; Elshobaki, Moneim; Chaudhary, Sumit; Smith, Emily A.

    2014-11-20

    The photostability of bulk heterojunction organic photovoltaic films containing a polymer donor and a fullerene-derivative acceptor was examined using resonance Raman spectroscopy and controlled laser power densities. The polymer donors were poly(3-hexylthiophene-2,5-diyl) (P3HT), poly[[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl] (PCDTBT), or poly({4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl}{3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl}) (PTB7). Four sample preparation methods were studied: (i) thin or (ii) thick films with fast solvent evaporation under nitrogen, (iii) thick films with slow solvent evaporation under nitrogen, and (iv) thin films dried under nitrogen followed by thermal annealing. Polymer order was assessed by monitoring a Raman peak’s full width at half-maximum and location as a function of illumination time and laser powermore » densities from 2.5 × 103 to 2.5 × 105 W cm–2. Resonance Raman spectroscopy measurements show that before prolonged illumination, PCDTBT and PTB7 have the same initial order for all preparation conditions, while P3HT order improves with slow solvent drying or thermal annealing. All films exhibited changes to bulk heterojunction structure with 2.5 × 105 Wcm–2 laser illumination as measured by resonance Raman spectroscopy, and atomic force microscopy images show evidence of sample heating that affects the polymer over an area greater than the illumination profile. Furthermore, photostability data are important for proper characterization by techniques involving illumination and the development of devices suitable for real-world applications.« less

  8. Light Trapping for High Efficiency Heterojunction Crystalline Si Solar Cells: Preprint

    SciTech Connect (OSTI)

    Wang, Q.; Xu, Y.; Iwaniczko, E.; Page, M.

    2011-04-01

    Light trapping plays an important role to achieve high short circuit current density (Jsc) and high efficiency for amorphous/crystalline Si heterojunction solar cells. Si heterojunction uses hydrogenated amorphous Si for emitter and back contact. This structure of solar cell posses highest open circuit voltage of 0.747 V at one sun for c-Si based solar cells. It also suggests that over 25% record-high efficiency is possible with further improvement of Jsc. Light trapping has two important tasks. The first one is to reduce the surface reflectance of light to zero for the solar spectrum that Si has a response. The second one is to increase the effective absorption length to capture all the photon. For Si heterojunction solar cell, surface texturing, anti-reflectance indium tin oxides (ITO) layer at the front and back are the key area to improve the light trapping.

  9. High-efficiency silicon heterojunction solar cells: Status and perspectives

    SciTech Connect (OSTI)

    De Wolf, S.; Geissbuehler, J.; Loper, P.; Martin de Nicholas, S.; Seif, J.; Tomasi, A.; Ballif, C.

    2015-05-11

    Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups are reporting devices with conversion efficiencies well over 20 % on both-sides contacted n-type cells, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short-wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long- wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metallization grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical transport requirements. The validity of this approach was convincingly demonstrated by Panasonic, Japan in 2014, reporting on an interdigitated back-contacted HJT cell with an efficiency of 25.6%, setting the new single-junction c-Si record. Finally, given the virtually perfect surface passivation and excellent red response of HJT solar cells, we anticipate these devices will also become the preferred bottom cell in ultra-high efficiency c-Si-based tandem devices, exploiting better the solar spectrum. Such tandem cells have the potential to overcome the fundamental single-junction limit of silicon solar cells (29.4%). Combining HJT cells with perovskite solar cells as top cell appears to be particularly appealing.

  10. High-efficiency silicon heterojunction solar cells: Status and perspectives

    SciTech Connect (OSTI)

    De Wolf, S.

    2015-04-27

    Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups are reporting devices with conversion efficiencies well over 20 % on n-type wafers, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short- wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long-wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metalisation grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical transport requirements. The validity of this approach was convincingly demonstrated by Panasonic, Japan in 2014, reporting on an interdigitated back-contacted HJT cell with an efficiency of 25.6%, setting the new single-junction c-Si record. Finally, given the virtually perfect surface passivation and excellent red response of HJT solar cells, we anticipate these devices will also become the preferred bottom cell in ultra-high efficiency c-Si-based tandem devices, exploiting better the solar spectrum. Such tandem cells have the potential to overcome the fundamental single-junction limit of silicon solar cells (29.4%). Combining HJT cells with perovskite solar cells as top cell appears to be particularly appealing.

  11. Structural and Optical Investigations of GaN-Si Interface for a Heterojunction Solar Cell

    SciTech Connect (OSTI)

    Williams, Joshua J.; Jeffries, April M.; Bertoni, Mariana I.; Williamson, Todd L.; Bowden, Stuart G.; Honsberg, Christiana B.

    2014-06-08

    In recent years the development of heterojunction silicon based solar cells has gained much attention, lea largely by the efforts of Panasonic’s HIT cell. The success of the HIT cell prompts the scientific exploration of other thin film layers, besides the industrially accepted amorphous silicon. In this paper we report upon the use of gallium nitride, grown by MBE at “low temperatures” (~200°C), on silicon wafers as one possible candidate for making a heterojunction solar cell; the first approximation of band alignments between GaN and Si; and the material quality as determined by X-ray diffraction.

  12. The Role of Additive in Diketopyrrolopyrrole-based Small Molecular Bulk

    Office of Scientific and Technical Information (OSTI)

    Heterojunction Solar Cells (Journal Article) | SciTech Connect Journal Article: The Role of Additive in Diketopyrrolopyrrole-based Small Molecular Bulk Heterojunction Solar Cells Citation Details In-Document Search Title: The Role of Additive in Diketopyrrolopyrrole-based Small Molecular Bulk Heterojunction Solar Cells Authors: Wang, Hongyu ; Liu, Feng ; Bu, Laju ; Gao, Jun ; Wang, Cheng ; Wei, Wei ; Russell, Thomas P. Publication Date: 2013-08-29 OSTI Identifier: 1160446 DOE Contract

  13. Transparent electrodes in silicon heterojunction solar cells: Influence on contact passivation

    SciTech Connect (OSTI)

    Tomasi, Andrea; Sahli, Florent; Seif, Johannes Peter; Fanni, Lorenzo; de Nicolas Agut, Silvia Martin; Geissbuhler, Jonas; Paviet-Salomon, Bertrand; Nicolay, Sylvain; Barraud, Loris; Niesen, Bjoern; De Wolf, Stefaan; Ballif, Christophe

    2015-10-26

    Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solar cells. As a result, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.

  14. Transparent electrodes in silicon heterojunction solar cells: Influence on contact passivation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Tomasi, Andrea; Sahli, Florent; Seif, Johannes Peter; Fanni, Lorenzo; de Nicolas Agut, Silvia Martin; Geissbuhler, Jonas; Paviet-Salomon, Bertrand; Nicolay, Sylvain; Barraud, Loris; Niesen, Bjoern; et al

    2015-10-26

    Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solarmore » cells. As a result, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.« less

  15. Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

    DOE Patents [OSTI]

    Feng, Tom (Morris Plains, NJ); Ghosh, Amal K. (New Providence, NJ)

    1980-01-01

    Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

  16. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  17. Dominance of interface chemistry over the bulk properties in determining the electronic structure of epitaxial metal/perovskite oxide heterojunctions

    SciTech Connect (OSTI)

    Chambers, Scott A.; Du, Yingge; Gu, Meng; Droubay, Timothy C.; Hepplestone, Steven; Sushko, Petr

    2015-06-09

    We show that despite very similar crystallographic properties and work function values in the bulk, epitaxial Fe and Cr metallizations on Nb:SrTiO3(001) generate completely different heterojunction electronic properties. Cr is Ohmic whereas Fe forms a Schottky barrier with a barrier height of 0.50 eV. This contrast arises because of differences in interface chemistry. In contrast to Cr [Chambers, S. A. et al., Adv. Mater. 2013, 25, 4001.], Fe exhibits a +2 oxidation state and occupies Ti sites in the perovskite lattice, resulting in negligible charge transfer to Ti, upward band bending, and Schottky barrier formation. The differences between Cr and Fe are understood by performing first-principles calculations of the energetics of defect formation which corroborate the observed interface chemistry and structure.

  18. Indium tin oxide and indium phosphide heterojunction nanowire array solar cells

    SciTech Connect (OSTI)

    Yoshimura, Masatoshi Nakai, Eiji; Fukui, Takashi; Tomioka, Katsuhiro; PRESTO, Japan Science and Technology Agency , Honcho Kawaguchi, 3320012 Saitama

    2013-12-09

    Heterojunction solar cells were formed with a position-controlled InP nanowire array sputtered with indium tin oxide (ITO). The ITO not only acted as a transparent electrode but also as forming a photovoltaic junction. The devices exhibited an open-circuit voltage of 0.436?V, short-circuit current of 24.8?mA/cm{sup 2}, and fill factor of 0.682, giving a power conversion efficiency of 7.37% under AM1.5?G illumination. The internal quantum efficiency of the device was higher than that of the world-record InP cell in the short wavelength range.

  19. High efficiency solar cells combining a perovskite and a silicon heterojunction solar cells via an optical splitting system

    SciTech Connect (OSTI)

    Uzu, Hisashi E-mail: npark@skku.edu; Ichikawa, Mitsuru; Hino, Masashi; Nakano, Kunihiro; Meguro, Tomomi; Yamamoto, Kenji; Hernández, José Luis; Kim, Hui-Seon; Park, Nam-Gyu E-mail: npark@skku.edu

    2015-01-05

    We have applied an optical splitting system in order to achieve very high conversion efficiency for a full spectrum multi-junction solar cell. This system consists of multiple solar cells with different band gap optically coupled via an “optical splitter.” An optical splitter is a multi-layered beam splitter with very high reflection in the shorter-wave-length range and very high transmission in the longer-wave-length range. By splitting the incident solar spectrum and distributing it to each solar cell, the solar energy can be managed more efficiently. We have fabricated optical splitters and used them with a wide-gap amorphous silicon (a-Si) solar cell or a CH{sub 3}NH{sub 3}PbI{sub 3} perovskite solar cell as top cells, combined with mono-crystalline silicon heterojunction (HJ) solar cells as bottom cells. We have achieved with a 550 nm cutoff splitter an active area conversion efficiency of over 25% using a-Si and HJ solar cells and 28% using perovskite and HJ solar cells.

  20. Silicon Heterojunction Solar Cells: Temperature Impact on Passivation and Performance

    SciTech Connect (OSTI)

    Seif, J.; Krishnamani, G.; Demaurex, B.; Martin de Nicholas, S.; Holm, N.; Ballif, C.; De Wolf, S.

    2015-03-23

    Photovoltaic devices deployed in the field can reach operation temperatures (T) as high as 90 °C [1]. Hence, their temperature coefficients (TC1) are of great practical importance as they determine their energy yield. In this study we concentrate on T-related lifetime variations of amorphous/crystalline interfaces and study their influence on the TCs of the individual solar cell parameters. We find that both the open-circuit voltage (Voc) and fill factor (FF) are influenced by these lifetime variations. However, this is only a minor effect compared to the dominant increase of the intrinsic carrier density and the related increase in dark saturation current density. Additionally, in this paper we will show that the TCVoc does not depend solely on the initial value of the Voc [2, 3], but that the structure of the device has to be considered as well.

  1. Copper migration in CdTe heterojunction solar cells

    SciTech Connect (OSTI)

    Chou, H.C.; Rohatgi, A.; Jokerst, N.M.; Thomas, E.W.; Kamra, S.

    1996-07-01

    CdTe solar cells were fabricated by depositing a Au/Cu contact with Cu thickness in the range of 50 to 150A on polycrystalline CdTe/CdS/SnO{sub 2} glass structures. The increase in Cu thickness improves ohmic contact and reduces series resistance (R{sub s}), but the excess Cu tends to diffuse into CdTe and lower shunt resistance (R{sub sh}) and cell performance. Light I-V and secondary ion mass spectroscopy (SIMS) measurements were performed to understand the correlations between the Cu contact thickness, the extent of Cu incorporation in the CdTe cells, and its impact on the cell performance. The CdTe/CdS/SnO{sub 2} glass, CdTe/CdS/GaAs, and CdTe/GaAs structures were prepared in an attempt to achieve CdTe films with different degrees of crystallinity and grain size. A large grain polycrystalline CdTe thin film solar cell was obtained for the first time by selective etching the GaAs substrate coupled with the film transfer onto a glass substrate. SIMS measurement showed that poor crystallinity and smaller grain size of the CdTe film promotes Cu diffusion and decreases the cell performance. Therefore, grain boundaries are the main conduits for Cu migration and larger CdTe grain size or alternate method of contact formation can mitigate the adverse effect of Cu and improve the cell performance. 15 refs., 1 fig.,6 tabs.

  2. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-11-01

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing,more » between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.« less

  3. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-11-01

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.

  4. Evaluation of transition metal oxide as carrier-selective contacts for silicon heterojunction solar cells

    SciTech Connect (OSTI)

    Ding, L.; Boccard, Matthieu; Holman, Zachary; Bertoni, M.

    2015-04-06

    "Reducing light absorption in the non-active solar cell layers, while enabling the extraction of the photogenerated minority carriers at quasi-Fermi levels are two key factors to improve current generation and voltage, and therefore efficiency of silicon heterojunction solar devices. To address these two critical aspects, transition metal oxide materials have been proposed as alternative to the n- and p-type amorphous silicon used as electron and hole selective contacts, respectively. Indeed, transition metal oxides such as molybdenum oxide, titanium oxide, nickel oxide or tungsten oxide combine a wide band gap typically over 3 eV with a band structure and theoretical band alignment with silicon that results in high transparency to the solar spectrum and in selectivity for the transport of only one carrier type. Improving carrier extraction or injection using transition metal oxide has been a topic of investigation in the field of organic solar cells and organic LEDs; from these pioneering works a lot of knowledge has been gained on materials properties, ways to control these during synthesis and deposition, and their impact on device performance. Recently, the transfer of some of this knowledge to silicon solar cells and the successful application of some metal oxide to contact heterojunction devices have gained much attention. In this contribution, we investigate the suitability of various transition metal oxide films (molybdenum oxide, titanium oxide, and tungsten oxide) deposited either by thermal evaporation or sputtering as transparent hole or electron selective transport layer for silicon solar cells. In addition to systematically characterize their optical and structural properties, we use photoemission spectroscopy to relate compound stoichiometry to band structure and characterize band alignment to silicon. The direct silicon/metal oxide interface is further analyzed by quasi-steady state photoconductance decay method to assess the quality of surface passivation. In complement, we construct full device structures incorporating in some cases surface passivation schemes, with measured initial conversion efficiency over 15% and evaluate the carrier transport properties using temperature-dependent current-voltage and capacitance-voltage measurements. With this detailed characterization study, we aim at providing the framework to assess the potential of a material as a carrier selective contact and the understanding of how each of the aforementioned parameters on the metal oxide films influence the full solar cell operating performances.

  5. Interfacial Engineering for Highly Efficient-Conjugated Polymer-Based Bulk Heterojunction Photovoltaic Devices

    SciTech Connect (OSTI)

    Alex Jen; David Ginger; Christine Luscombe; Hong Ma

    2012-04-02

    The aim of our proposal is to apply interface engineering approach to improve charge extraction, guide active layer morphology, improve materials compatibility, and ultimately allow the fabrication of high efficiency tandem cells. Specifically, we aim at developing: i. Interfacial engineering using small molecule self-assembled monolayers ii. Nanostructure engineering in OPVs using polymer brushes iii. Development of efficient light harvesting and high mobility materials for OPVs iv. Physical characterization of the nanostructured systems using electrostatic force microscopy, and conducting atomic force microscopy v. All-solution processed organic-based tandem cells using interfacial engineering to optimize the recombination layer currents vi. Theoretical modeling of charge transport in the active semiconducting layer The material development effort is guided by advanced computer modeling and surface/ interface engineering tools to allow us to obtain better understanding of the effect of electrode modifications on OPV performance for the investigation of more elaborate device structures. The materials and devices developed within this program represent a major conceptual advancement using an integrated approach combining rational molecular design, material, interface, process, and device engineering to achieve solar cells with high efficiency, stability, and the potential to be used for large-area roll-to-roll printing. This may create significant impact in lowering manufacturing cost of polymer solar cells for promoting clean renewable energy use and preventing the side effects from using fossil fuels to impact environment.

  6. Doped hole transport layer for efficiency enhancement in planar heterojunction organolead trihalide perovskite solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Qi; Bi, Cheng; Huang, Jinsong

    2015-05-06

    We demonstrated the efficiency of a solution-processed planar heterojunction organometallic trihalide perovskite solar cell can be increased to 17.5% through doping the hole transporting layer for reducing the resistivity. Doped Poly(triaryl amine) (PTAA) by 2,3,5,6-Tetrafluoro-7,7,8,8-Tetracyanoquinodimethane (F4-TCNQ) reduced device series resistance by three-folds, increasing the device fill factor to 74%, open circuit voltage to 1.09 V without sacrificing the short circuit current. As a result, this study reveals that the high resistivity of currently broadly applied polymer hole transport layer limits the device efficiency, and points a new direction to improve the device efficiency.

  7. Low temperature front surface passivation of interdigitated back contact silicon heterojunction solar cell

    SciTech Connect (OSTI)

    Shu, Brent; Das, Ujjwal; Jani, Omkar; Hegedus, Steve; Birkmire, Robert

    2009-06-08

    The interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell requires a low temperature front surface passivation/anti-reflection structure. Conventional silicon surface passivation using SiO2 or a-SiNx is performed at temperature higher than 400C, which is not suitable for the IBC-SHJ cell. In this paper, we propose a PECVD a-Si:H/a-SiNx:H/a-SiC:H stack structure to passivate the front surface of crystalline silicon at low temperature. The optical properties and passivation quality of this structure are characterized and solar cells using this structure are fabricated. With 2 nm a-Si:H layer, the stack structure exhibits stable passivation with effective minority carrier lifetime higher than 2 ms, and compatible with IBC-SHJ solar cell processing. A critical advantage of this structure is that the SiC allows it to be HF resistant, thus it can be deposited as the first step in the process. This protects the a-Si/c-Si interface and maintains a low surface recombination velocity.

  8. Low-temperature high-mobility amorphous IZO for silicon heterojunction solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Morales-Masis, Monica; Martin De Nicolas, Silvia; Holovsky, Jakub; De Wolf, Stefaan; Ballif, Christophe

    2015-07-13

    Parasitic absorption in the transparent conductive oxide (TCO) front electrode is one of the limitations of silicon heterojunction (SHJ) solar cells efficiency. To avoid such absorption while retaining high conductivity, TCOs with high electron mobility are preferred over those with high carrier density. Here, we demonstrate improved SHJ solar cell efficiencies by applying high-mobility amorphous indium zinc oxide (a-IZO) as the front TCO. We sputtered a-IZO at low substrate temperature and low power density and investigated the optical and electrical properties, as well as subband tail formation-quantified by the Urbach energy (EU)-as a function of the sputtering oxygen partial pressure.more » We obtain an EU as low as 128 meV for films with the highest Hall mobility of 60 cm2/Vs. When comparing the performance of a-IZO films with indium tin oxide (ITO) and hydrogenated indium oxide (IO:H), we find that IO:H (115 cm2/Vs) exhibits a similar EU of 130 meV, while ITO (25 cm2/Vs) presents a much larger EU of up to 270 meV. The high film quality, indicated by the low EU, the high mobility, and low free carrier absorption of the developed a-IZO electrodes, result in a significant current improvement, achieving conversion efficiencies over 21.5%, outperforming those with standard ITO.« less

  9. Well-Passivated a-Si:H Back Contacts for Double-Heterojunction Silicon Solar Cells: Preprint

    SciTech Connect (OSTI)

    Page, M. R.; Iwaniczko, E.; Xu, Y.; Wang, Q.; Yan, Y.; Roybal, L.; Branz, H. M.; Wang, T. H.

    2006-05-01

    We have developed hydrogenated amorphous silicon (a Si:H) back contacts to both p- and n-type silicon wafers, and employed them in double-heterojunction solar cells. These contacts are deposited entirely at low temperature (<250 C) and replace the standard diffused or alloyed back-surface-field contacts used in single-heterojunction (front-emitter only) cells. High-quality back contacts require excellent surface passivation, indicated by a low surface recombination velocity of minority-carriers (S) or a high open-circuit voltage (Voc). The back contact must also provide good conduction for majority carriers to the external circuit, as indicated by a high light I-V fill factor. We use hot-wire chemical vapor deposition (HWCVD) to grow a-Si:H layers for both the front emitters and back contacts. Our improved a-Si:H back contacts contribute to our recent achievement of a confirmed 18.2% efficiency in double-heterojunction silicon solar cells on p type textured silicon wafers.

  10. Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}

    DOE Patents [OSTI]

    Mickelsen, R.A.; Chen, W.S.

    1985-08-13

    An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.

  11. Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

    DOE Patents [OSTI]

    Mickelsen, Reid A.; Chen, Wen S.

    1985-08-13

    An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

  12. Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

    DOE Patents [OSTI]

    Mickelsen, Reid A.; Chen, Wen S.

    1982-01-01

    An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5.mu.m to .congruent.5.0.mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

  13. Methods for forming thin-film heterojunction solar cells from I-III-VI[sub 2

    DOE Patents [OSTI]

    Mickelsen, R.A.; Chen, W.S.

    1982-06-15

    An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (1) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI[sub 2] chalcopyrite ternary materials which is vacuum deposited in a thin composition-graded'' layer ranging from on the order of about 2.5 microns to about 5.0 microns ([approx equal]2.5[mu]m to [approx equal]5.0[mu]m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (2), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, is allowed.

  14. Low-temperature high-mobility amorphous IZO for silicon heterojunction solar cells

    SciTech Connect (OSTI)

    Morales-Masis, Monica; Martin De Nicolas, Silvia; Holovsky, Jakub; De Wolf, Stefaan; Ballif, Christophe

    2015-07-13

    Parasitic absorption in the transparent conductive oxide (TCO) front electrode is one of the limitations of silicon heterojunction (SHJ) solar cells efficiency. To avoid such absorption while retaining high conductivity, TCOs with high electron mobility are preferred over those with high carrier density. Here, we demonstrate improved SHJ solar cell efficiencies by applying high-mobility amorphous indium zinc oxide (a-IZO) as the front TCO. We sputtered a-IZO at low substrate temperature and low power density and investigated the optical and electrical properties, as well as subband tail formation-quantified by the Urbach energy (EU)-as a function of the sputtering oxygen partial pressure. We obtain an EU as low as 128 meV for films with the highest Hall mobility of 60 cm2/Vs. When comparing the performance of a-IZO films with indium tin oxide (ITO) and hydrogenated indium oxide (IO:H), we find that IO:H (115 cm2/Vs) exhibits a similar EU of 130 meV, while ITO (25 cm2/Vs) presents a much larger EU of up to 270 meV. The high film quality, indicated by the low EU, the high mobility, and low free carrier absorption of the developed a-IZO electrodes, result in a significant current improvement, achieving conversion efficiencies over 21.5%, outperforming those with standard ITO.

  15. Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell

    SciTech Connect (OSTI)

    Nagamatsu, Ken A. Man, Gabriel; Jhaveri, Janam; Berg, Alexander H.; Kahn, Antoine; Wagner, Sigurd; Sturm, James C.; Avasthi, Sushobhan; Sahasrabudhe, Girija; Schwartz, Jeffrey

    2015-03-23

    In this work, we use an electron-selective titanium dioxide (TiO{sub 2}) heterojunction contact to silicon to block minority carrier holes in the silicon from recombining at the cathode contact of a silicon-based photovoltaic device. We present four pieces of evidence demonstrating the beneficial effect of adding the TiO{sub 2} hole-blocking layer: reduced dark current, increased open circuit voltage (V{sub OC}), increased quantum efficiency at longer wavelengths, and increased stored minority carrier charge under forward bias. The importance of a low rate of recombination of minority carriers at the Si/TiO{sub 2} interface for effective blocking of minority carriers is quantitatively described. The anode is made of a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) heterojunction to silicon which forms a hole selective contact, so that the entire device is made at a maximum temperature of 100 °C, with no doping gradients or junctions in the silicon. A low rate of recombination of minority carriers at the Si/TiO{sub 2} interface is crucial for effective blocking of minority carriers. Such a pair of complementary carrier-selective heterojunctions offers a path towards high-efficiency silicon solar cells using relatively simple and near-room temperature fabrication techniques.

  16. Efficient Crystalline Si Solar Cell with Amorphous/Crystalline Silicon Heterojunction as Back Contact: Preprint

    SciTech Connect (OSTI)

    Nemeth, B.; Wang, Q.; Shan, W.

    2012-06-01

    We study an amorphous/crystalline silicon heterojunction (Si HJ) as a back contact in industrial standard p-type five-inch pseudo-square wafer to replace Al back surface field (BSF) contact. The best efficiency in this study is over 17% with open-circuit (Voc) of 0.623 V, which is very similar to the control cell with Al BSF. We found that Voc has not been improved with the heterojunction structure in the back. The typical minority carrier lifetime of these wafers is on the order of 10 us. We also found that the doping levels of p-layer affect the FF due to conductivity and band gap shifting, and an optimized layer is identified. We conclude that an amorphous/crystalline silicon heterojunction can be a very promising structure to replace Al BSF back contact.

  17. Amorphous Silicon Carbide Passivating Layers to Enable Higher Processing Temperature in Crystalline Silicon Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Boccard, Mathieu; Holman, Zachary

    2015-04-06

    "Very efficient crystalline silicon (c-Si) solar cells have been demonstrated when thin layers of intrinsic and doped hydrogenated amorphous silicon (a-Si:H) are used for passivation and carrier selectivity in a heterojunction device. One limitation of this device structure is the (parasitic) absorption in the front passivation/collection a-Si:H layers; another is the degradation of the a-Si:H-based passivation upon temperature, limiting the post-processes to approximately 200°C thus restricting the contacting possibilities and potential tandem device fabrication. To alleviate these two limitations, we explore the potential of amorphous silicon carbide (a-SiC:H), a widely studied material in use in standard a-Si:H thin-film solar cells, which is known for its wider bandgap, increased hydrogen content and stronger hydrogen bonding compared to a-Si:H. We study the surface passivation of solar-grade textured n-type c-Si wafers for symmetrical stacks of 10-nm-thick intrinsic a-SiC:H with various carbon content followed by either p-doped or n-doped a-Si:H (referred to as i/p or i/n stacks). For both doping types, passivation (assessed through carrier lifetime measurements) is degraded by increasing the carbon content in the intrinsic a-SiC:H layer. Yet, this hierarchy is reversed after annealing at 350°C or more due to drastic passivation improvements upon annealing when an a-SiC:H layer is used. After annealing at 350°C, lifetimes of 0.4 ms and 2.0 ms are reported for i/p and i/n stacks, respectively, when using an intrinsic a-SiC:H layer with approximately 10% of carbon (initial lifetimes of 0.3 ms and 0.1 ms, respectively, corresponding to a 30% and 20-fold increase, respectively). For stacks of pure a-Si:H material the lifetimes degrade from 1.2 ms and 2.0 ms for i/p and i/n stacks, respectively, to less than 0.1 ms and 1.1 ms (12-fold and 2-fold decrease, respectively). For complete solar cells using pure a-Si:H i/p and i/n stacks, the open-circuit voltage (Voc) drops from 720 mV to 600 mV when annealing the device at 350°C. Yet, the Voc of devices using an intrinsic a-SiC:H layer with around 10% carbon content in the i/p stack is more resilient to such process, dropping from 710 mV to 690 mV. Also, irrespective of annealing, the slightly improved transparency of a-SiC:H layers allows about 1% current gain due to a better blue-light response. Active-area efficiencies above 20% are thus obtained for particular carbon content conditions, slightly higher than for devices using only a-Si:H. Even for a-SiC:H layers with bandgaps of up to 2.1 eV, good hole collection is maintained (with fill factors of 67% for devices using intrinsic a-SiC:H in the i/p stack, compared to 73% for the reference device). However, S-shaped current-voltage curves were obtained for devices using such a-SiC:H layers in the i/n stack, indicating impeded transport, which would suggest that most of the bandgap increase translates in a conduction-band offset.

  18. Formation of BaSi{sub 2} heterojunction solar cells using transparent MoO{sub x} hole transport layers

    SciTech Connect (OSTI)

    Du, W.; Takabe, R.; Baba, M.; Takeuchi, H.; Toko, K.; Hara, K. O.; Usami, N.; Suemasu, T.

    2015-03-23

    Heterojunction solar cells that consist of 15?nm thick molybdenum trioxide (MoO{sub x}, x?solar cell applications.

  19. "Plastic" Solar Cells: Self-Assembly of Bulk HeterojunctionNano...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Academy of Science. Prof. Heeger founded UNIAX Corporation in 1990; UNIAX was acquired by DuPont in 2000. Prof. Heeger is Chairman and Co-founder of CBrite Inc. in Santa Barbara.

  20. Structural and optoelectronic properties of hybrid bulk-heterojunction materials based on conjugated small molecules and mesostructured TiO{sub 2}

    SciTech Connect (OSTI)

    Phan, Hung [Department of Chemistry and Biochemistry, University of California, Santa Barbara, California 93106 (United States); Jahnke, Justin P.; Chmelka, Bradley F. [Department of Chemical Engineering, University of California, Santa Barbara, California 93106 (United States); Nguyen, Thuc-Quyen, E-mail: quyen@chem.ucsb.edu [Department of Chemistry and Biochemistry, University of California, Santa Barbara, California 93106 (United States); Department of Chemistry, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia)

    2014-06-09

    Improved hybrid bulk-heterojunction materials was fabricated by spin-casting a benchmark conjugated small molecule, namely, 3,6-bis(5-(benzofuran-2-yl)thiophen-2-yl)-2,5-bis(2-ethylhexyl) pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione (DPP(TBFu){sub 2}), into mesostructured TiO{sub 2}. Due to both a reduced molecular size and less hydrophobic nature of the conjugated molecules (relative to conjugated polymers), homogeneous and improved infiltration into the mesoporous TiO{sub 2} are achieved without the need for pre-treatment of the TiO{sub 2}. Remarkably, this small molecule can realize loadings of up to 25% of the total pore volume2.5 the typical loadings achieved for conjugated polymers. The small molecule loading was determined using dynamic secondary ion mass spectroscopy and absorption spectroscopy. Further characterization such as charge transfer and nanoscale conducting atomic force microscopy helps to demonstrate the promise and viability of small molecule donors for hybrid optoelectronic devices.

  1. Low cost back contact heterojunction solar cells on thin c-Si wafers. integrating laser and thin film processing for improved manufacturability

    SciTech Connect (OSTI)

    Hegedus, Steven S.

    2015-09-08

    An interdigitated back contact (IBC) Si wafer solar cell with deposited a-Si heterojunction (HJ) emitter and contacts is considered the ultimate single junction Si solar cell design. This was confirmed in 2014 by both Panasonic and Sharp Solar producing IBC-HJ cells breaking the previous record Si solar cell efficiency of 25%. But manufacturability at low cost is a concern for the complex IBC-HJ device structure. In this research program, our goals were to addressed the broad industry need for a high-efficiency c-Si cell that overcomes the dominant module cost barriers by 1) developing thin Si wafers synthesized by innovative, kerfless techniques; 2) integrating laser-based processing into most aspects of solar cell fabrication, ensuring high speed and low thermal budgets ; 3) developing an all back contact cell structure compatible with thin wafers using a simplified, low-temperature fabrication process; and 4) designing the contact patterning to enable simplified module assembly. There were a number of significant achievements from this 3 year program. Regarding the front surface, we developed and applied new method to characterize critical interface recombination parameters including interface defect density Dit and hole and electron capture cross-section for use as input for 2D simulation of the IBC cell to guide design and loss analysis. We optimized the antireflection and passivation properties of the front surface texture and a-Si/a-SiN/a-SiC stack depositions to obtain a very low (< 6 mA/cm2) front surface optical losses (reflection and absorption) while maintaining excellent surface passivation (SRV<5 cm/s). We worked with kerfless wafer manufacturers to apply defect-engineering techniques to improve bulk minority-carrier lifetime of thin kerfless wafers by both reducing initial impurities during growth and developing post-growth gettering techniques. This led insights about the kinetics of nickel, chromium, and dislocations in PV-grade silicon and to achieving millisecond lifetimes in kerfless silicon materials. Laser fired contacts to n-Si were developed for the first time using a Al/Sb/Ti metal stack giving contact resistances < 5 mOhm-cm2 when fired through several different dielectric layers. A new 2 step laser+chemical etch isolation technique was developed using a sacrificial top coating which avoids laser damage to Si passivation. Regarding the heterojunction emitter, analysis of front FHJ (1D) and IBC (2D) cells with range of p-layer conditions found that a 2-stage high/low doped p-layer was optimum: the low doped region has lower defects giving higher Voc and the high doped region gave a better contact to the metal. A significant effort was spent studying the patterning process and its contribution to degradation of passivation and reproducibility. Several promising new cleaning, contact and deposition patterning and processing approaches were implemented leading to fabrication of several runs with cells having 19-20% efficiency which were stable over several months. This program resulted in the training and support of 12 graduate students, publication of 21 journal papers and 14 conference papers.

  2. Low cost back contact heterojunction solar cells on thin c-Si wafers. Integrating laser and thin film processing for improved manufacturability

    SciTech Connect (OSTI)

    Hegedus, Steven S.

    2015-09-08

    An interdigitated back contact (IBC) Si wafer solar cell with deposited a-Si heterojunction (HJ) emitter and contacts is considered the ultimate single junction Si solar cell design. This was confirmed in 2014 by both Panasonic and Sharp Solar producing IBC-HJ cells breaking the previous record Si solar cell efficiency of 25%. But manufacturability at low cost is a concern for the complex IBC-HJ device structure. In this research program, our goals were to addressed the broad industry need for a high-efficiency c-Si cell that overcomes the dominant module cost barriers by 1) developing thin Si wafers synthesized by innovative, kerfless techniques; 2) integrating laser-based processing into most aspects of solar cell fabrication, ensuring high speed and low thermal budgets ; 3) developing an all back contact cell structure compatible with thin wafers using a simplified, low-temperature fabrication process; and 4) designing the contact patterning to enable simplified module assembly. There were a number of significant achievements from this 3 year program. Regarding the front surface, we developed and applied new method to characterize critical interface recombination parameters including interface defect density Dit and hole and electron capture cross-section for use as input for 2D simulation of the IBC cell to guide design and loss analysis. We optimized the antireflection and passivation properties of the front surface texture and a-Si/a-SiN/a-SiC stack depositions to obtain a very low (< 6 mA/cm2) front surface optical losses (reflection and absorption) while maintaining excellent surface passivation (SRV<5 cm/s). We worked with kerfless wafer manufacturers to apply defect-engineering techniques to improve bulk minority-carrier lifetime of thin kerfless wafers by both reducing initial impurities during growth and developing post-growth gettering techniques. This led insights about the kinetics of nickel, chromium, and dislocations in PV-grade silicon and to achieving millisecond lifetimes in kerfless silicon materials. Laser fired contacts to n-Si were developed for the first time using a Al/Sb/Ti metal stack giving contact resistances < 5 mOhm-cm2 when fired through several different dielectric layers. A new 2 step laser+chemical etch isolation technique was developed using a sacrificial top coating which avoids laser damage to Si passivation. Regarding the heterojunction emitter, analysis of front FHJ (1D) and IBC (2D) cells with range of p-layer conditions found that a 2-stage high/low doped p-layer was optimum: the low doped region has lower defects giving higher Voc and the high doped region gave a better contact to the metal. A significant effort was spent studying the patterning process and its contribution to degradation of passivation and reproducibility. Several promising new cleaning, contact and deposition patterning and processing approaches were implemented leading to fabrication of several runs with cells having 19-20% efficiency which were stable over several months. This program resulted in the training and support of 12 graduate students, publication of 21 journal papers and 14 conference papers.

  3. Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor–insulator–semiconductor heterojunction solar cell

    SciTech Connect (OSTI)

    Talkenberg, Florian Illhardt, Stefan; Schmidl, Gabriele; Schleusener, Alexander; Sivakov, Vladimir; Radnóczi, György Zoltán; Pécz, Béla; Dikhanbayev, Kadyrjan; Mussabek, Gauhar; Gudovskikh, Alexander

    2015-07-15

    Semiconductor–insulator–semiconductor heterojunction solar cells were prepared using atomic layer deposition (ALD) technique. The silicon surface was treated with oxygen and hydrogen plasma in different orders before dielectric layer deposition. A plasma-enhanced ALD process was applied to deposit dielectric Al{sub 2}O{sub 3} on the plasma pretreated n-type Si(100) substrate. Aluminum doped zinc oxide (Al:ZnO or AZO) was deposited by thermal ALD and serves as transparent conductive oxide. Based on transmission electron microscopy studies the presence of thin silicon oxide (SiO{sub x}) layer was detected at the Si/Al{sub 2}O{sub 3} interface. The SiO{sub x} formation depends on the initial growth behavior of Al{sub 2}O{sub 3} and has significant influence on solar cell parameters. The authors demonstrate that a hydrogen plasma pretreatment and a precursor dose step repetition of a single precursor improve the initial growth behavior of Al{sub 2}O{sub 3} and avoid the SiO{sub x} generation. Furthermore, it improves the solar cell performance, which indicates a change of the Si/Al{sub 2}O{sub 3} interface states.

  4. Impact of Improved Solar Forecasts on Bulk Power System Operations in ISO-NE (Presentation)

    SciTech Connect (OSTI)

    Brancucci Martinez-Anido, C.; Florita, A.; Hodge, B.M.

    2014-11-01

    The diurnal nature of solar power is made uncertain by variable cloud cover and the influence of atmospheric conditions on irradiance scattering processes. Its forecasting has become increasingly important to the unit commitment and dispatch process for efficient scheduling of generators in power system operations. This presentation is an overview of a study that examines the value of improved solar forecasts on Bulk Power System Operations.

  5. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    SciTech Connect (OSTI)

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-14

    With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.

  6. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-14

    With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

  7. A way for studying the impact of PEDOT:PSS interface layer on carrier transport in PCDTBT:PC{sub 71}BM bulk hetero junction solar cells by electric field induced optical second harmonic generation measurement

    SciTech Connect (OSTI)

    Ahmad, Zubair Abdullah, Shahino Mah; Sulaiman, Khaulah; Taguchi, Dai; Iwamoto, Mitsumasa

    2015-04-28

    Electric-field-induced optical second-harmonic generation (EFISHG) measurement was employed to study the impact of poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate (PEDOT:PSS) interface layer on the carrier transport mechanism of the PCDTBT:PC{sub 71}BM bulk heterojunction (BHJ) organic solar cells (OSCs). We revealed that the electric fields in the PCDTBT and PC{sub 71}BM were allowed to be measured individually by choosing fundamental laser wavelengths of 1000 nm and 1060 nm, respectively, in dark and under illumination. The results showed that the direction of the internal electric fields in the PCDTBT:PC{sub 71}BM BHJ layer is reversed by introducing the PEDOT:PSS layer, and this results in longer electron transport time in the BHJ layer. We conclude that TR-EFISHG can be used as a novel way for studying the impact of interfacial layer on the transport of electrons and holes in the bulk-heterojunction OSCs.

  8. Enhanced optoelectronic quality of perovskite thin films with hypophosphorous acid for planar heterojunction solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhang, Wei; Pathak, Sandeep; Sakai, Nobuya; Stergiopoulos, Thomas; Nayak, Pabitra K.; Noel, Nakita K.; Haghighirad, Amir A.; Burlakov, Victor M.; deQuilettes, Dane W.; Sadhanala, Aditya; et al

    2015-11-30

    Solution-processed metal halide perovskite semiconductors, such as CH3NH3PbI3, have exhibited remarkable performance in solar cells, despite having non-negligible density of defect states. A likely candidate is halide vacancies within the perovskite crystals, or the presence of metallic lead, both generated due to the imbalanced I/Pb stoichiometry which could evolve during crystallization. Herein, we show that the addition of hypophosphorous acid (HPA) in the precursor solution can significantly improve the film quality, both electronically and topologically, and enhance the photoluminescence intensity, which leads to more efficient and reproducible photovoltaic devices. We demonstrate that the HPA can reduce the oxidized I2 backmore » into I-, and our results indicate that this facilitates an improved stoichiometry in the perovskite crystal and a reduced density of metallic lead.« less

  9. Enhanced optoelectronic quality of perovskite thin films with hypophosphorous acid for planar heterojunction solar cells

    SciTech Connect (OSTI)

    Zhang, Wei; Pathak, Sandeep; Sakai, Nobuya; Stergiopoulos, Thomas; Nayak, Pabitra K.; Noel, Nakita K.; Haghighirad, Amir A.; Burlakov, Victor M.; deQuilettes, Dane W.; Sadhanala, Aditya; Li, Wenzhe; Wang, Liduo; Ginger, David S.; Friend, Richard H.; Snaith, Henry J.

    2015-11-30

    Solution-processed metal halide perovskite semiconductors, such as CH3NH3PbI3, have exhibited remarkable performance in solar cells, despite having non-negligible density of defect states. A likely candidate is halide vacancies within the perovskite crystals, or the presence of metallic lead, both generated due to the imbalanced I/Pb stoichiometry which could evolve during crystallization. Herein, we show that the addition of hypophosphorous acid (HPA) in the precursor solution can significantly improve the film quality, both electronically and topologically, and enhance the photoluminescence intensity, which leads to more efficient and reproducible photovoltaic devices. We demonstrate that the HPA can reduce the oxidized I2 back into I-, and our results indicate that this facilitates an improved stoichiometry in the perovskite crystal and a reduced density of metallic lead.

  10. Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI.sub.2 chalcopyrite compounds

    DOE Patents [OSTI]

    Mickelsen, Reid A.; Chen, Wen S.

    1983-01-01

    Apparatus for forming thin-film, large area solar cells having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n-type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in the first semiconductor layer to evolve into p-type material, thereby defining a thin layer heterojunction device characterized by the absence of voids, vacancies and nodules which tend to reduce the energy conversion efficiency of the system.

  11. An easy-to-fabricate low-temperature TiO{sub 2} electron collection layer for high efficiency planar heterojunction perovskite solar cells

    SciTech Connect (OSTI)

    Conings, B.; Baeten, L.; Jacobs, T.; Dera, R.; D’Haen, J.; Manca, J.; Boyen, H.-G.

    2014-08-01

    Organometal trihalide perovskite solar cells arguably represent the most auspicious new photovoltaic technology so far, as they possess an astonishing combination of properties. The impressive and brisk advances achieved so far bring forth highly efficient and solution processable solar cells, holding great promise to grow into a mature technology that is ready to be embedded on a large scale. However, the vast majority of state-of-the-art perovskite solar cells contains a dense TiO{sub 2} electron collection layer that requires a high temperature treatment (>450 °C), which obstructs the road towards roll-to-roll processing on flexible foils that can withstand no more than ∼150 °C. Furthermore, this high temperature treatment leads to an overall increased energy payback time and cumulative energy demand for this emerging photovoltaic technology. Here we present the implementation of an alternative TiO{sub 2} layer formed from an easily prepared nanoparticle dispersion, with annealing needs well within reach of roll-to-roll processing, making this technology also appealing from the energy payback aspect. Chemical and morphological analysis allows to understand and optimize the processing conditions of the TiO{sub 2} layer, finally resulting in a maximum obtained efficiency of 13.6% for a planar heterojunction solar cell within an ITO/TiO{sub 2}/CH{sub 3}NH{sub 3}PbI{sub 3-x}Cl{sub x}poly(3-hexylthiophene)/Ag architecture.

  12. Evidence for near-Surface NiOOH Species in Solution-Processed NiOx Selective Interlayer Materials: Impact on Energetics and the Performance of Polymer Bulk Heterojunction Photovoltaics

    SciTech Connect (OSTI)

    Ratcliff, Erin L.; Meyer, Jens; Steirer, K. Xerxes; Garcia, Andres; Berry, Joseph J.; Ginley, David S.; Olson, Dana C.; Kahn, Antoine; Armstrong, Neal R.

    2011-11-22

    The characterization and implementation of solution-processed, wide bandgap nickel oxide (NiO{sub x}) hole-selective interlayer materials used in bulk-heterojunction (BHJ) organic photovoltaics (OPVs) are discussed. The surface electrical properties and charge selectivity of these thin films are strongly dependent upon the surface chemistry, band edge energies, and midgap state concentrations, as dictated by the ambient conditions and film pretreatments. Surface states were correlated with standards for nickel oxide, hydroxide, and oxyhydroxide components, as determined using monochromatic X-ray photoelectron spectroscopy. Ultraviolet and inverse photoemission spectroscopy measurements show changes in the surface chemistries directly impact the valence band energies. O?-plasma treatment of the as-deposited NiO{sub x} films was found to introduce the dipolar surface species nickel oxyhydroxide (NiOOH), rather than the p-dopant Ni?O?, resulting in an increase of the electrical band gap energy for the near-surface region from 3.1 to 3.6 eV via a vacuum level shift. Electron blocking properties of the as-deposited and O?-plasma treated NiO{sub x} films are compared using both electron-only and BHJ devices. O?-plasma-treated NiO{sub x} interlayers produce electron-only devices with lower leakage current and increased turn on voltages. The differences in behavior of the different pretreated interlayers appears to arise from differences in local density of states that comprise the valence band of the NiO{sub x} interlayers and changes to the band gap energy, which influence their hole-selectivity. The presence of NiOOH states in these NiO{sub x} films and the resultant chemical reactions at the oxide/organic interfaces in OPVs is predicted to play a significant role in controlling OPV device efficiency and lifetime.

  13. Comparing Multiple Exciton Generation in Quantum Dots To Impact Ionization in Bulk Semiconductors: Implications for Enhancement of Solar Energy Conversion

    SciTech Connect (OSTI)

    Beard, Matthew C.; Midgett, Aaron G.; Hanna, Mark C.; Luther, Joseph M.; Hughes, Barbara K.; Nozik, Arthur J.

    2010-07-26

    Multiple exciton generation (MEG) in quantum dots (QDs) and impact ionization (II) in bulk semiconductors are processes that describe producing more than one electron-hole pair per absorbed photon. We derive expressions for the proper way to compare MEG in QDs with II in bulk semiconductors and argue that there are important differences in the photophysics between bulk semiconductors and QDs. Our analysis demonstrates that the fundamental unit of energy required to produce each electron-hole pair in a given QD is the band gap energy. We find that the efficiency of the multiplication process increases by at least 2 in PbSe QDs compared to bulk PbSe, while the competition between cooling and multiplication favors multiplication by a factor of 3 in QDs. We also demonstrate that power conversion efficiencies in QD solar cells exhibiting MEG can greatly exceed conversion efficiencies of their bulk counterparts, especially if the MEG threshold energy can be reduced toward twice the QD band gap energy, which requires a further increase in the MEG efficiency. Finally, we discuss the research challenges associated with achieving the maximum benefit of MEG in solar energy conversion since we show the threshold and efficiency are mathematically related.

  14. Impact of Improved Solar Forecasts on Bulk Power System Operations in ISO-NE: Preprint

    SciTech Connect (OSTI)

    Brancucci Martinez-Anido, C.; Florita, A.; Hodge, B. M.

    2014-09-01

    The diurnal nature of solar power is made uncertain by variable cloud cover and the influence of atmospheric conditions on irradiance scattering processes. Its forecasting has become increasingly important to the unit commitment and dispatch process for efficient scheduling of generators in power system operations. This study examines the value of improved solar power forecasting for the Independent System Operator-New England system. The results show how 25% solar power penetration reduces net electricity generation costs by 22.9%.

  15. Adhesion in flexible organic and hybrid organic/inorganic light emitting device and solar cells

    SciTech Connect (OSTI)

    Yu, D.; Kwabi, D.; Akogwu, O.; Du, J.; Oyewole, O. K.; Tong, T.; Anye, V. C.; Rwenyagila, E.; Asare, J.; Fashina, A.; Soboyejo, W. O.

    2014-08-21

    This paper presents the results of an experimental study of the adhesion between bi-material pairs that are relevant to organic light emitting devices, hybrid organic/inorganic light emitting devices, organic bulk heterojunction solar cells, and hybrid organic/inorganic solar cells on flexible substrates. Adhesion between the possible bi-material pairs is measured using force microscopy (AFM) techniques. These include: interfaces that are relevant to organic light emitting devices, hybrid organic/inorganic light emitting devices, bulk heterojunction solar cells, and hybrid combinations of titanium dioxide (TiO{sub 2}) and poly(3-hexylthiophene). The results of AFM measurements are incorporated into the Derjaguin-Muller-Toporov model for the determination of adhesion energies. The implications of the results are then discussed for the design of robust organic and hybrid organic/inorganic electronic devices.

  16. High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy

    SciTech Connect (OSTI)

    Lang, J. R.; Neufeld, C. J.; Hurni, C. A.; Cruz, S. C.; Matioli, E.; Mishra, U. K.; Speck, J. S.

    2011-04-01

    High external quantum efficiency (EQE) p-i-n heterojunction solar cellsgrown by NH3 -based molecular beam epitaxy are presented. EQE values including optical losses are greater than 50% with fill-factors over 72% when illuminated with a 1 sun AM0 spectrum. Optical absorptionmeasurements in conjunction with EQE measurements indicate an internal quantum efficiency greater than 90% for the InGaN absorbing layer. By adjusting the thickness of the top p-type GaN window contact layer, it is shown that the short-wavelength (<365 nm) quantum efficiency is limited by the minority carrier diffusion length in highly Mg-doped p-GaN.

  17. Markets to Facilitate Wind and Solar Energy Integration in the Bulk Power Supply: An IEA Task 25 Collaboration; Preprint

    SciTech Connect (OSTI)

    Milligan, M.; Holttinen, H.; Soder, L.; Clark, C.; Pineda, I.

    2012-09-01

    Wind and solar power will give rise to challenges in electricity markets regarding flexibility, capacity adequacy, and the participation of wind and solar generators to markets. Large amounts of wind power will have impacts on bulk power system markets and electricity prices. If the markets respond to increased wind power by increasing investments in low-capital, high-cost or marginal-cost power, the average price may remain in the same range. However, experiences so far from Denmark, Germany, Spain, and Ireland are such that the average market prices have decreased because of wind power. This reduction may result in additional revenue insufficiency, which may be corrected with a capacity market, yet capacity markets are difficult to design. However, the flexibility attributes of the capacity also need to be considered. Markets facilitating wind and solar integration will include possibilities for trading close to delivery (either by shorter gate closure times or intraday markets). Time steps chosen for markets can enable more flexibility to be assessed. Experience from 5- and 10-minute markets has been encouraging.

  18. The Impact of Improved Solar Forecasts on Bulk Power System Operations in ISO-NE (Presentation), NREL (National Renewable Energy Laboratory)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Improved Solar Forecasts on Bulk Power System Operations in ISO-NE 4 th Solar Integration Workshop Carlo Brancucci Martinez-Anido, Anthony Florita, and Bri-Mathias Hodge Berlin, Germany November 10, 2014 NREL/PR-5000-63082 2 Motivation and Scope * The economic benefits from renewable energy forecasting are largely unquantified in the power community o Current renewable energy penetration levels in the United States are often too low to appreciably quantify the value of improving renewable energy

  19. Nanocrystalline heterojunction materials

    DOE Patents [OSTI]

    Elder, Scott H.; Su, Yali; Gao, Yufei; Heald, Steve M.

    2003-07-15

    Mesoporous nanocrystalline titanium dioxide heterojunction materials are disclosed. In one disclosed embodiment, materials comprising a core of titanium dioxide and a shell of a molybdenum oxide exhibit a decrease in their photoadsorption energy as the size of the titanium dioxide core decreases.

  20. Nanocrystalline Heterojunction Materials

    DOE Patents [OSTI]

    Elder, Scott H. (Portland, OR); Su, Yali (Richland, WA); Gao, Yufei (Blue Bell, PA); Heald, Steve M. (Downers Grove, IL)

    2004-02-03

    Mesoporous nanocrystalline titanium dioxide heterojunction materials and methods of making the same are disclosed. In one disclosed embodiment, materials comprising a core of titanium dioxide and a shell of a molybdenum oxide exhibit a decrease in their photoadsorption energy as the size of the titanium dioxide core decreases.

  1. Copper oxide/N-silicon heterojunction photovoltaic device

    DOE Patents [OSTI]

    Feng, Tom; Ghosh, Amal K.

    1982-01-01

    A photovoltaic device having characteristics of a high efficiency solar cell comprising a Cu.sub.x O/n-Si heterojunction. The Cu.sub.x O layer is formed by heating a deposited copper layer in an oxygen containing ambient.

  2. Origin and elimination of photocurrent hysteresis by fullerene passivation in CH3NH3PbI3 planar heterojunction solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shao, Yuchuan; Xiao, Zhengguo; Bi, Cheng; Yuan, Yongbo; Huang, Jinsong

    2014-12-15

    The large photocurrent hysteresis observed in many organometal trihalide perovskite solar cells has become a major hindrance impairing the ultimate performance and stability of these devices, while its origin was unknown. Here we demonstrate the trap states on the surface and grain boundaries of the perovskite materials to be the origin of photocurrent hysteresis and that the fullerene layers deposited on perovskites can effectively passivate these charge trap states and eliminate the notorious photocurrent hysteresis. Fullerenes deposited on the top of the perovskites reduce the trap density by two orders of magnitude and double the power conversion efficiency of CH3NH3PbI3more » solar cells. As a result, the elucidation of the origin of photocurrent hysteresis and its elimination by trap passivation in perovskite solar cells provides important directions for future enhancements to device efficiency.« less

  3. Integrating Wind and Solar Energy in the U.S. Bulk Power System: Lessons from Regional Integration Studies

    SciTech Connect (OSTI)

    Bird, L.; Lew, D.

    2012-09-01

    Two recent studies sponsored by the U.S. Department of Energy (DOE) and the National Renewable Energy Laboratory (NREL) have examined the impacts of integrating high penetrations of wind and solar energy on the Eastern and Western electric grids. The Eastern Wind Integration and Transmission Study (EWITS), initiated in 2007, examined the impact on power system operations of reaching 20% to 30% wind energy penetration in the Eastern Interconnection. The Western Wind and Solar Integration Study (WWSIS) examined the operational implications of adding up to 35% wind and solar energy penetration to the Western Interconnect. Both studies examined the costs of integrating variable renewable energy generation into the grid and transmission and operational changes that might be necessary to address higher penetrations of wind or solar generation. This paper identifies key insights from these regional studies for integrating high penetrations of renewables in the U.S. electric grid. The studies share a number of key findings, although in some instances the results vary due to differences in grid operations and markets, the geographic location of the renewables, and the need for transmission.

  4. RAPID/BulkTransmission/Exploration | Open Energy Information

    Open Energy Info (EERE)

    search RAPID Regulatory and Permitting Information Desktop Toolkit BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us RAPID Bulk Transmission ...

  5. Tellurium-Containing Conjugated Materials for Solar Cells: From Sulfur to Tellurium

    SciTech Connect (OSTI)

    Park Y. S.; Kale, T.; Wu, Q.; Ocko, B.M.; Black, C.T., Grubbs, R.B.

    2013-04-03

    A series of diketopyrrolopyrrole(DPP)-based small molecules have been synthesized by palladium-catalyzed coupling reactions. Electron-donating moieties (benzothiophene, benzoselenophene, and benzotellurophene) are bridged by an electron-withdrawing DPP unit to generate donor-acceptor-donor (D-A-D) type molecules. We observe red-shifts in absorption spectra of these compounds by varying heteroatoms from sulfur to tellurium. In bulk heterojunction solar cells with [6,6]phenyl-C61-butyric acid methyl ester (PC61BM) as acceptor, we obtain power conversion efficiencies of 2.4% (benzothiophene), 4.1% (benzoselenophene), and 3.0% (benzotellurophene), respectively.

  6. Interface engineering for efficient fullerene-free organic solar cells

    SciTech Connect (OSTI)

    Shivanna, Ravichandran; Narayan, K. S. E-mail: narayan@jncasr.ac.in; Rajaram, Sridhar E-mail: narayan@jncasr.ac.in

    2015-03-23

    We demonstrate the role of zinc oxide (ZnO) morphology and addition of an acceptor interlayer to achieve high efficiency fullerene-free bulk heterojunction inverted organic solar cells. Nanopatterning of the ZnO buffer layer enhances the effective light absorption in the active layer, and the insertion of a twisted perylene acceptor layer planarizes and decreases the electron extraction barrier. Along with an increase in current homogeneity, the reduced work function difference and selective transport of electrons prevent the accumulation of charges and decrease the electron-hole recombination at the interface. These factors enable an overall increase of efficiency to 4.6%, which is significant for a fullerene-free solution-processed organic solar cell.

  7. Current and lattice matched tandem solar cell

    DOE Patents [OSTI]

    Olson, Jerry M. (Lakewood, CO)

    1987-01-01

    A multijunction (cascade) tandem photovoltaic solar cell device is fabricated of a Ga.sub.x In.sub.1-x P (0.505.ltoreq.X.ltoreq.0.515) top cell semiconductor lattice matched to a GaAs bottom cell semiconductor at a low-resistance heterojunction, preferably a p+/n+ heterojunction between the cells. The top and bottom cells are both lattice matched and current matched for high efficiency solar radiation conversion to electrical energy.

  8. Solar

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power ... comprehensively recording solar irradiance data to accompany its outdoor PV testing. ...

  9. Photovoltaic properties and morphology of organic solar cells based on liquid-crystal semiconducting polymer with additive

    SciTech Connect (OSTI)

    Suzuki, Atsushi; Zushi, Masahito; Suzuki, Hisato; Ogahara, Shinichi; Akiyama, Tsuyoshi; Oku, Takeo

    2014-02-20

    Bulk heterojunction organic solar cell based on liquid crystal semiconducting polymers of poly[9,9-dioctylfluorene-co-bithiophene] (F8T2) as p-type semiconductors and fullerenes (C{sub 60}) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) as electron donor and acceptor has been fabricated and characterized for improving photovoltaic and optical properties. The photovoltaic performance including current voltage curves in the dark and illumination of the F8T2/C{sub 60} conventional and inverted bulk heterojunction solar cells were investigated. Relationship between the photovoltaic properties and morphological behavior was focused on tuning for optimization of photo-voltaic performance under annealing condition near glass transition temperature. Additive-effect of diiodooctane (DIO) and poly(3-hexylthiophene-2,5-diyl) (P3HT) on the photovoltaic performance and optical properties was investigated. Mechanism of the photovoltaic properties of the conventional and inverted solar cells will be discussed by the experimental results.

  10. Panchromatic polymer-polymer ternary solar cells enhanced by Forster resonance energy transfer and solvent vapor annealing

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Goh, Tenghooi; Sfeir, Matthew Y.; Huang, Jing -Shun; Bartolome, Benjamin; Vaisman, Michelle; Lee, Minjoo L.; Taylor, Andre D.

    2015-08-04

    Thanks to the bulk-heterojunction (BHJ) feature of polymer solar cells (PSC), additional light active components can be added with ease to form ternary solar cells. This strategy has achieved great success largely due to expanded spectral response range and improved power conversion efficiency (PCE) without incurring excessive processing costs. Here, we report ternary blend polymer–polymer solar cells comprised of PTB7, P3HT, and PC71BM with PCE as high as 8.2%. Analyses of femtosecond time resolved photoluminescence and transient absorption spectroscopy data confirm that P3HT is effective in transferring energy non-radiatively by inducing excitons and prolonging their overall lifetime in PTB7. Asmore » a result, solvent vapor annealing (SVA) treatment was employed to rectify the overly-coarse morphology, thus enhancing the fill factor, reducing interfacial recombination, and boosting the PCE to 8.7%.« less

  11. Panchromatic polymer-polymer ternary solar cells enhanced by Forster resonance energy transfer and solvent vapor annealing

    SciTech Connect (OSTI)

    Goh, Tenghooi; Sfeir, Matthew Y.; Huang, Jing -Shun; Bartolome, Benjamin; Vaisman, Michelle; Lee, Minjoo L.; Taylor, Andre D.

    2015-08-04

    Thanks to the bulk-heterojunction (BHJ) feature of polymer solar cells (PSC), additional light active components can be added with ease to form ternary solar cells. This strategy has achieved great success largely due to expanded spectral response range and improved power conversion efficiency (PCE) without incurring excessive processing costs. Here, we report ternary blend polymer–polymer solar cells comprised of PTB7, P3HT, and PC71BM with PCE as high as 8.2%. Analyses of femtosecond time resolved photoluminescence and transient absorption spectroscopy data confirm that P3HT is effective in transferring energy non-radiatively by inducing excitons and prolonging their overall lifetime in PTB7. As a result, solvent vapor annealing (SVA) treatment was employed to rectify the overly-coarse morphology, thus enhancing the fill factor, reducing interfacial recombination, and boosting the PCE to 8.7%.

  12. Transparent conductor-Si pillars heterojunction photodetector

    SciTech Connect (OSTI)

    Yun, Ju-Hyung; Kim, Joondong; Park, Yun Chang

    2014-08-14

    We report a high-performing heterojunction photodetector by enhanced surface effects. Periodically, patterned Si substrates were used to enlarge the photo-reactive regions and yield proportionally improved photo-responses. An optically transparent indium-tin-oxide (ITO) was deposited on a Si substrate and spontaneously formed an ITO/Si heterojunction. Due to an electrical conductive ITO film, ITO/Si heterojunction device can be operated at zero-bias, which effectively suppresses the dark current, resulting in better performances than those by a positive or a negative bias operation. This zero-bias operating heterojunction device exhibits a short response time (? 22.5?ms) due to the physical reaction to the incident light. We revealed that the location of the space charge region (SCR) is crucial for a specific photon-wavelength response. The SCR space has the highest collection efficiency of the photo-generated carriers. The photo-response can be maximized when we design the photodetector by superposing the SCR space over a corresponding photon-absorption length. The surface enhanced Si pillar devices significantly improved the photo-responses ratios from that of a planar Si device. According to this design scheme, a high photo-response ratio of 5560% was achieved at a wavelength of 600?nm. This surfaced-enhanced heterojunction design scheme would be a promising approach for various photoelectric applications.

  13. Development and characterization of PCDTBT:CdSe QDs hybrid solar cell

    SciTech Connect (OSTI)

    Dixit, Shiv Kumar Bhatnagar, Chhavi Kumari, Anita Madhwal, Devinder Bhatnagar, P. K. Mathur, P. C.

    2014-10-15

    Solar cell consisting of low band gap polymer poly[N-900-hepta-decanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10, 30-benzothiadiazole)] (PCDTBT) as donor and cadmium selenide/zinc sulphide (CdSe/ZnS) core shell quantum dots (QDs) as an acceptor has been developed. The absorption measurements show that the absorption coefficient increases in bulk heterojunction (BHJ) structure covering broad absorption spectrum (200nm–700nm). Also, the photoluminescence (PL) of the PCDTBT:QDs film is found to decrease by an order of magnitude showing a significant transfer of electrons to the QDs. With this approach and under broadband white light with an irradiance of 8.19 mW/cm{sup 2}, we have been able to achieve a power conversion efficiency (PCE) of 3.1 % with fill factor 0.42 for our typical solar cell.

  14. Origin and elimination of photocurrent hysteresis by fullerene passivation in CH3NH3PbI3 planar heterojunction solar cells

    SciTech Connect (OSTI)

    Shao, Yuchuan; Xiao, Zhengguo; Bi, Cheng; Yuan, Yongbo; Huang, Jinsong

    2014-12-15

    The large photocurrent hysteresis observed in many organometal trihalide perovskite solar cells has become a major hindrance impairing the ultimate performance and stability of these devices, while its origin was unknown. Here we demonstrate the trap states on the surface and grain boundaries of the perovskite materials to be the origin of photocurrent hysteresis and that the fullerene layers deposited on perovskites can effectively passivate these charge trap states and eliminate the notorious photocurrent hysteresis. Fullerenes deposited on the top of the perovskites reduce the trap density by two orders of magnitude and double the power conversion efficiency of CH3NH3PbI3 solar cells. As a result, the elucidation of the origin of photocurrent hysteresis and its elimination by trap passivation in perovskite solar cells provides important directions for future enhancements to device efficiency.

  15. Electrodeposited cobalt sulfide hole collecting layer for polymer solar cells

    SciTech Connect (OSTI)

    Zampetti, Andrea; De Rossi, Francesca; Brunetti, Francesca; Reale, Andrea; Di Carlo, Aldo; Brown, Thomas M., E-mail: thomas.brown@uniroma2.it [CHOSE (Centre for Hybrid and Organic Solar Energy), Department of Electronic Engineering, University of Rome Tor Vergata, Via del Politecnico 1, 00133 Rome (Italy)

    2014-08-11

    In polymer solar cells based on the blend of regioregular poly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester, the hole collecting layer has to be endowed with its ionization potential close to or greater than that of P3HT (?5?eV). Conductive polymer blends such as poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) and metal oxides such as vanadium pentoxide (V{sub 2}O{sub 5}) and molybdenum trioxide (MoO{sub 3}) satisfy this requirement and have been the most common materials used so far in bulk heterojunction structures. We report here cobalt sulfide (CoS) to be a promising hole collecting material deposited by convenient and room temperature electrodeposition. By simply tuning the CoS electrodeposition parameters, power conversion efficiencies similar (within 15%) to a reference structure with PEDOT:PSS were obtained.

  16. RAPID/BulkTransmission/Federal | Open Energy Information

    Open Energy Info (EERE)

    Permitting Information Desktop Toolkit BETA About Bulk Transmission Geothermal Hydropower Solar Tools Contribute Contact Us Regulatory Information Overviews Search for other...

  17. solar

    National Nuclear Security Administration (NNSA)

    2%2A en Solar power purchase for DOE laboratories http:nnsa.energy.govmediaroompressreleasessolarpower

  18. Varying cadmium telluride growth temperature during deposition to increase solar cell reliability

    DOE Patents [OSTI]

    Albin, David S.; Johnson, James Neil; Zhao, Yu; Korevaar, Bastiaan Arie

    2016-04-26

    A method for forming thin films or layers of cadmium telluride (CdTe) for use in photovoltaic modules or solar cells. The method includes varying the substrate temperature during the growth of the CdTe layer by preheating a substrate (e.g., a substrate with a cadmium sulfide (CdS) heterojunction or layer) suspended over a CdTe source to remove moisture to a relatively low preheat temperature. Then, the method includes directly heating only the CdTe source, which in turn indirectly heats the substrate upon which the CdTe is deposited. The method improves the resulting CdTe solar cell reliability. The resulting microstructure exhibits a distinct grain size distribution such that the initial region is composed of smaller grains than the bulk region portion of the deposited CdTe. Resulting devices exhibit a behavior suggesting a more n-like CdTe material near the CdS heterojunction than devices grown with substrate temperatures held constant during CdTe deposition.

  19. Constructing Ordered Sensitized Heterojunctions: Bottom-Up Electrochemical Synthesis of p-Type Semiconductors in Oriented n-TiO2 Nanotube Arrays

    SciTech Connect (OSTI)

    Wang, Q.; Zhu, K.; Neale, N. R.; Frank. A. J.

    2009-01-01

    Fabrication of efficient semiconductor-sensitized bulk heterojunction solar cells requires the complete filling of the pore system of one semiconductor (host) material with nanoscale dimensions (<100 nm) with a different semiconductor (guest) material. Because of the small pore size and electrical conductivity of the host material, it is challenging to employ electrochemical approaches to fill the entire pore network. Typically, during the electrochemical deposition process, the guest material blocks the pores of the host, precluding complete pore filling. We describe a general synthetic strategy for spatially controlling the growth of p-type semiconductors in the nanopores of electrically conducting n-type materials. As an illustration of this strategy, we report on the facile electrochemical deposition of p-CuInSe{sub 2} in nanoporous anatase n-TiO{sub 2} oriented nanotube arrays and nanoparticle films. We show that by controlling the ambipolar diffusion length the p-type semiconductors can be deposited from the bottom-up, resulting in complete pore filling.

  20. Large rectification in molecular heterojunctions | Argonne National

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laboratory Large rectification in molecular heterojunctions April 19, 2016 Tweet EmailPrint The outstanding challenge in using molecules in optoelectronics devices is to create electrical functionality through molecular design and to go beyond the use of molecules as mere light absorbers and/or resistive elements. The earliest proposal for such non-linear electrical behavior is the Aviram-Ratner molecular diode model, proposed in 1974. However, more than forty years later, the electrical

  1. Solar

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    3 - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Fuel Cycle Defense Waste Management Programs Advanced Nuclear Energy Nuclear

  2. Solar

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Fuel Cycle Defense Waste Management Programs Advanced Nuclear Energy Nuclear

  3. Rotary bulk solids divider

    DOE Patents [OSTI]

    Maronde, Carl P. (McMurray, PA); Killmeyer, Jr., Richard P. (Pittsburgh, PA)

    1992-01-01

    An apparatus for the disbursement of a bulk solid sample comprising, a gravity hopper having a top open end and a bottom discharge end, a feeder positioned beneath the gravity hopper so as to receive a bulk solid sample flowing from the bottom discharge end, and a conveyor receiving the bulk solid sample from the feeder and rotating on an axis that allows the bulk solid sample to disperse the sample to a collection station.

  4. Graphene composite for improvement in the conversion efficiency of flexible poly 3-hexyl-thiophene:[6,6]-phenyl C{sub 71} butyric acid methyl ester polymer solar cells

    SciTech Connect (OSTI)

    Chauhan, A. K., E-mail: akchau@barc.gov.in, E-mail: akc.barc@gmail.com; Gusain, Abhay; Jha, P.; Koiry, S. P.; Saxena, Vibha; Veerender, P.; Aswal, D. K.; Gupta, S. K. [Technical Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai-400085 (India)

    2014-03-31

    The solution of thin graphene-sheets obtained from a simple ultrasonic exfoliation process was found to chemically interact with [6,6]-phenyl C{sub 71} butyric acid methyl ester (PCBM) molecules. The thinner graphene-sheets have significantly altered the positions of highest occupied molecular orbital and lowest unoccupied molecular orbital of PCBM, which is beneficial for the enhancement of the open circuit voltage of the solar cells. Flexible bulk heterojunction solar cells fabricated using poly 3-hexylthiophene (P3HT):PCBM-graphene exhibited a power conversion efficiency of 2.51%, which is a ?2-fold increase as compared to those fabricated using P3HT:PCBM. Inclusion of graphene-sheets not only improved the open-circuit voltage but also enhanced the short-circuit current density owing to an improved electron transport.

  5. Photochemical charges separation and photoelectric properties of flexible solar cells with two types of heterostructures

    SciTech Connect (OSTI)

    Liu, Xiangyang E-mail: yzgu@henu.edu.cn; Wang, Shun; Zheng, Haiwu; Cheng, Xiuying; Gu, Yuzong E-mail: yzgu@henu.edu.cn

    2015-12-14

    Photochemical charges generation, separation, and transport at nanocrystal interfaces are central to energy conversion for solar cells. Here, Zn{sub 2}SnO{sub 4} nanowires/Cu{sub 4}Bi{sub 4}S{sub 9} (ZTO/CBS), ZTO nanowires/CBS-reduced graphene oxide (ZTO/CBS-RGO), and bulk heterojunction (BHJ) solar cells were measured. The signals of steady state and electric field-induced surface photovoltage indicate that RGO with high electron mobility can evidently improve the photovoltaic response. Besides, ZTO/CBS and ZTO/CBS-RGO cells exhibit the excellent performance and the highest efficiencies of 1.2% and 2.8%, respectively. The internal relations of photoelectric properties to some factors, such as film thickness, direct paths, RGO conductive network, energy level matching, etc., were discussed in detail. Qualitative and quantitative analyses further verified the comprehensive effect of RGO and other factors. Importantly, the fine bendable characteristic of BHJ solar cells with excellent efficiency and facile, scalable production gives the as-made flexible solar cells device potential for practical application in future.

  6. Flow-enhanced solution printing of all-polymer solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Diao, Ying; Zhou, Yan; Kurosawa, Tadanori; Shaw, Leo; Wang, Cheng; Park, Steve; Guo, Yikun; Reinspach, Julia A.; Gu, Kevin; Gu, Xiaodan; et al

    2015-08-12

    Morphology control of solution coated solar cell materials presents a key challenge limiting their device performance and commercial viability. Here we present a new concept for controlling phase separation during solution printing using an all-polymer bulk heterojunction solar cell as a model system. The key aspect of our method lies in the design of fluid flow using a microstructured printing blade, on the basis of the hypothesis of flow-induced polymer crystallization. Our flow design resulted in a similar to 90% increase in the donor thin film crystallinity and reduced microphase separated donor and acceptor domain sizes. The improved morphology enhancedmore » all metrics of solar cell device performance across various printing conditions, specifically leading to higher short-circuit current, fill factor, open circuit voltage and significantly reduced device-to-device variation. However, we expect our design concept to have broad applications beyond all-polymer solar cells because of its simplicity and versatility.« less

  7. Current- and lattice-matched tandem solar cell

    DOE Patents [OSTI]

    Olson, J.M.

    1985-10-21

    A multijunction (cascade) tandem photovoltaic solar cell device is fabricated of a Ga/sub x/In/sub 1-x/P (0.505 equal to or less than x equal to or less than 0.515) top cell semiconductor lattice-matched to a GaAs bottom cell semiconductor at a low resistance heterojunction, preferably a p/sup +//n/sup +/ heterojunction between the cells. The top and bottom cells are both lattice-matched and current-matched for high efficiency solar radiation conversion to electrical energy.

  8. Electronic Structure of Fullerene Acceptors in Organic Bulk-Heterojunctions. A Combined EPR and DFT Study

    SciTech Connect (OSTI)

    Mardis, Kristy L.; Webb, J.; Holloway, Tarita; Niklas, Jens; Poluektov, Oleg G.

    2015-11-16

    Organic photovoltaic (OPV) devices are a promising alternative energy source. Attempts to improve their performance have focused on the optimization of electron-donating polymers, while electron-accepting fullerenes have received less attention. Here, we report an electronic structure study of the widely used soluble fullerene derivatives PC61BM and PC71BM in their singly reduced state, that are generated in the polymer:fullerene blends upon light-induced charge separation. Density functional theory (DFT) calculations characterize the electronic structures of the fullerene radical anions through spin density distributions and magnetic resonance parameters. The good agreement of the calculated magnetic resonance parameters with those determined experimentally by advanced electron paramagnetic resonance (EPR) allows the validation of the DFT calculations. Thus, for the first time, the complete set of magnetic resonance parameters including directions of the principal g-tensor axes were determined. For both molecules, no spin density is present on the PCBM side chain, and the axis of the largest g-value lies along the PCBM molecular axis. While the spin density distribution is largely uniform for PC61BM, it is not evenly distributed for PC71BM.

  9. P3HT/PCBM Bulk Heterojunction Organic Photovoltaics. Correlating Efficiency and Morphology

    SciTech Connect (OSTI)

    Chen, Dian; Nakahara, Atsuhiro; Wei, Dongguang; Nordlund, Dennis; Russell, Thomas P.

    2010-12-21

    Controlling thin film morphology is key in optimizing the efficiency of polymer-based photovoltaic (PV) devices. We show that morphology and interfacial behavior of the multicomponent active layers confined between electrodes are strongly influenced by the preparation conditions. Here, we provide detailed descriptions of the morphologies and interfacial behavior in thin film mixtures of regioregular poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM), a typical active layer in a polymer-based PV device, in contact with an anode layer of PEDOT-PSS and either unconfined or confined by an Al cathode during thermal treatment. Small angle neutron scattering and electron microscopy show that a nanoscopic, bicontinuous morphology develops within seconds of annealing at 150 C and coarsens slightly with further annealing. P3HT and PCBM are shown to be highly miscible, to exhibit a rapid, unusual interdiffusion, and to display a preferential segregation of one component to the electrode interfaces. The ultimate morphology is related to device efficiency.

  10. Hanford ETR Bulk Vitrification System - Demonstration Bulk Vitrification

    Energy Savers [EERE]

    System (DBVS) Review Report | Department of Energy Hanford ETR Bulk Vitrification System - Demonstration Bulk Vitrification System (DBVS) Review Report Hanford ETR Bulk Vitrification System - Demonstration Bulk Vitrification System (DBVS) Review Report Full Document and Summary Versions are available for download PDF icon Hanford ETR Bulk Vitrification System - Demonstration Bulk Vitrification System (DBVS) Review Report PDF icon Summary - Demonstration Bulk Vitrification System (DBVS) for

  11. RAPID/Solar/Environment/California | Open Energy Information

    Open Energy Info (EERE)

    SolarEnvironmentCalifornia < RAPID | Solar | Environment Jump to: navigation, search RAPID Regulatory and Permitting Information Desktop Toolkit BETA About Bulk...

  12. Patterned Arrays of Lateral Heterojunctions within Monolayer 2D Semiconductors

    SciTech Connect (OSTI)

    Mahjouri-Samani, Masoud; Lin, Ming-Wei; Wang, Kai; Lupini, Andrew R; Lee, Jaekwang; Basile Carrasco, Leonardo A; Rouleau, Christopher M; Boulesbaa, Abdelaziz; Puretzky, Alexander A; Ivanov, Ilia N; Xiao, Kai; Yoon, Mina; Geohegan, David B

    2015-01-01

    The formation of semiconductor heterojunctions and their high density integration are foundations of modern electronics and optoelectronics. To enable two-dimensional (2D) crystalline semiconductors as building blocks in next generation electronics, developing methods to deterministically form lateral heterojunctions is crucial. Here we demonstrate a process strategy for the formation of lithographically-patterned lateral semiconducting heterojunctions within a single 2D crystal. E-beam lithography is used to pattern MoSe2 monolayer crystals with SiO2, and the exposed locations are selectively and totally converted to MoS2 using pulsed laser deposition (PLD) of sulfur in order to form MoSe2/MoS2 heterojunctions in predefined patterns. The junctions and conversion process are characterized by atomically resolved scanning transmission electron microscopy, photoluminescence, and Raman spectroscopy. This demonstration of lateral semiconductor heterojunction arrays within a single 2D crystal is an essential step for the lateral integration of 2D semiconductor building blocks with different electronic and optoelectronic properties for high-density, ultrathin circuitry.

  13. Patterned Arrays of Lateral Heterojunctions within Monolayer 2D Semiconductors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mahjouri-Samani, Masoud; Lin, Ming-Wei; Wang, Kai; Lupini, Andrew R; Lee, Jaekwang; Basile Carrasco, Leonardo A; Rouleau, Christopher M; Boulesbaa, Abdelaziz; Puretzky, Alexander A; Ivanov, Ilia N; et al

    2015-01-01

    The formation of semiconductor heterojunctions and their high density integration are foundations of modern electronics and optoelectronics. To enable two-dimensional (2D) crystalline semiconductors as building blocks in next generation electronics, developing methods to deterministically form lateral heterojunctions is crucial. Here we demonstrate a process strategy for the formation of lithographically-patterned lateral semiconducting heterojunctions within a single 2D crystal. E-beam lithography is used to pattern MoSe2 monolayer crystals with SiO2, and the exposed locations are selectively and totally converted to MoS2 using pulsed laser deposition (PLD) of sulfur in order to form MoSe2/MoS2 heterojunctions in predefined patterns. The junctions and conversionmoreprocess are characterized by atomically resolved scanning transmission electron microscopy, photoluminescence, and Raman spectroscopy. This demonstration of lateral semiconductor heterojunction arrays within a single 2D crystal is an essential step for the lateral integration of 2D semiconductor building blocks with different electronic and optoelectronic properties for high-density, ultrathin circuitry.less

  14. Large area bulk superconductors

    DOE Patents [OSTI]

    Miller, Dean J.; Field, Michael B.

    2002-01-01

    A bulk superconductor having a thickness of not less than about 100 microns is carried by a polycrystalline textured substrate having misorientation angles at the surface thereof not greater than about 15.degree.; the bulk superconductor may have a thickness of not less than about 100 microns and a surface area of not less than about 50 cm.sup.2. The textured substrate may have a thickness not less than about 10 microns and misorientation angles at the surface thereof not greater than about 15.degree.. Also disclosed is a process of manufacturing the bulk superconductor and the polycrystalline biaxially textured substrate material.

  15. Past Events | Center for Energy Efficient Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Semiconductor Materials for High-Efficiency Multijunction ... bulk Heterojunction Solar Cells Seminar Series Azita Emami: ... Perspectives on Advancing Energy Sustainability Seminar ...

  16. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    ... The Role of Additive in Diketopyrrolopyrrole-based Small Molecular Bulk Heterojunction Solar Cells Wang, Hongyu ; Liu, Feng ; Bu, Laju ; Gao, Jun ; Wang, Cheng ; Wei, Wei ; ...

  17. Charge Recombination, Transport Dynamics, and Interfacial Effects in Organic Solar Cells

    SciTech Connect (OSTI)

    Heeger, Alan; Bazan, Guillermo; Nguyen, Thuc-Quyen; Wudl, Fred

    2015-02-27

    The need for renewable sources of energy is well known. Conversion of sunlight to electricity using solar cells is one of the most important opportunities for creating renewable energy sources. The research carried out under DE-FG02-08ER46535 focused on the science and technology of “Plastic” solar cells comprised of organic (i.e. carbon based) semiconductors. The Bulk Heterojunction concept involves a phase separated blend of two organic semiconductors each with dimensions in the nano-meter length scale --- one a material that functions as a donor for electrons and the other a material that functions as an acceptor for electrons. The nano-scale inter-penetrating network concept for “Plastic” solar cells was created at UC Santa Barbara. A simple measure of the impact of this concept can be obtained from a Google search which gives 244,000 “hits” for the Bulk Heterojunction solar cell. Research funded through this program focused on four major areas: 1. Interfacial effects in organic photovoltaics, 2. Charge transfer and photogeneration of mobile charge carriers in organic photovoltaics, 3. Transport and recombination of the photogenerated charge carriers in organic photovoltaics, 4. Synthesis of novel organic semiconducting polymers and semiconducting small molecules, including conjugated polyelectrolytes. Following the discovery of ultrafast charge transfer at UC Santa Barbara in 1992, the nano-organic (Bulk Heterojunction) concept was formulated. The need for a morphology comprising two interpenetrating bicontinuous networks was clear: one network to carry the photogenerated electrons (negative charge) to the cathode and one network to carry the photo-generated holes (positive charge) to the anode. This remarkable self-assembled network morphology has now been established using Transmission electron Microscopy (TEM) either in the Phase Contrast mode or via TEM-Tomography. The steps involved in delivering power from a solar cell to an external circuit are the following: • Photo-excitation of the donor (or the acceptor). • Charge transfer with holes in the donor domain and electrons in the acceptor domain. • Sweep-out to electrodes prior to recombination by the internal electric field. • Energy delivered to the external circuit. Each of these four steps was studied in detail using a wide variety of organic semiconductors with different molecular structures. This UC Santa Barbara group was the first to clarify the origin and the mechanism involved in the ultrafast charge transfer process. The ultrafast charge transfer (time scale approximately 100 times faster than the first step in the photo-synthesis of green plants) is the fundamental reason for the potential for high power conversion efficiency of sunlight to electricity from plastic solar cells. The UCSB group was the first to emphasize, clarify and demonstrate the need for sweep-out to electrodes prior to recombination by the internal electric field. The UCSB group was the first to synthesize small molecule organic semiconductors capable of high power conversion efficiencies. The results of this research were published in high impact peer-reviewed journals. Our published papers (40 in number) provide answers to fundamental questions that have been heavily discussed and debated in the field of Bulk Heterojunction Solar Cells; scientific questions that must be resolved before this technology can be ready for commercialization in large scale for production of renewable energy. Of the forty publications listed, nineteen were co-authored by two or more of the PIs, consistent with the multi-investigator approach described in the original proposal. The specific advantages of this “plastic” solar cell technology are the following: a. Manufacturing by low-cost printing technology using soluble organic semiconductors; this approach can be implemented in large scale by roll-to-roll printing on plastic substrates. b. Low energy cost in manufacturing; all steps carried out at room temperature (approx. a factor of ten less than the use of Silicon which requires high temperature processing). c. Low carbon footprint d. Lightweight, flexible and rugged Because of the resolution of many scientific issues, a significant fraction of which were addressed in the research results of DE-FG02-08ER46535, the power conversion efficiencies are improving at an ever increasing rate. During the funding period of DE-FG02-08ER46535, the power conversion efficiencies of plastic solar cells improved from just a few per cent to values greater than 11% with contributions from our group and from researchers all over the world.

  18. Cross-sectional electrostatic force microscopy of thin-film solar cells

    SciTech Connect (OSTI)

    Ballif, C.; Moutinho, H. R.; Al-Jassim, M. M.

    2001-01-15

    In a recent work, we showed that atomic force microscopy (AFM) is a powerful technique to image cross sections of polycrystalline thin films. In this work, we apply a modification of AFM, namely, electrostatic force microscopy (EFM), to investigate the electronic properties of cleaved II--VI and multijunction thin-film solar cells. We cleave the devices in such a way that they are still working with their nominal photovoltaic efficiencies and can be polarized for the measurements. This allows us to differentiate between surface effects (work function and surface band bending) and bulk device properties. In the case of polycrystalline CdTe/CdS/SnO{sub 2}/glass solar cells, we find a drop of the EFM signal in the area of the CdTe/CdS interface ({+-}50 nm). This drop varies in amplitude and sign according to the applied external bias and is compatible with an n-CdS/p-CdTe heterojunction model, thereby invalidating the possibility of a deeply buried n-p CdTe homojunction. In the case of a triple-junction GaInP/GaAs/Ge device, we observe a variation of the EFM signal linked to both the material work-function differences and to the voltage bias applied to the cell. We attempt a qualitative explanation of the results and discuss the implications and difficulties of the EFM technique for the study of such thin-film devices.

  19. Science Highlights- Center for Solar and Thermal Energy Conversion

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Highlight Slides Abstracts (Click on Title) and Science Highlight Slides (Click on Image) Highlights From 2014 Comparison of Ultrafast Pulse Measurement Methods Low-temperature Physical Properties of Cu2Se Modeling the Role of Donor/Acceptor Interface in Charge Transfer in SubPc/C60-based Solar Cells Universal Design Principles for Cascade Heterojunction Solar Cells with High Fill Factors and Internal Quantum Efficiencies Approaching 100% Exciton Management in Organic Photovoltaic Multi-donor

  20. 15.01.16 RH Perovskite Solar Cells - JCAP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Fabrication of High Efficiency Perovskite Solar Cells Li, Y., Cooper, J. K., Buonsanti, R., Giannini, G., Liu, Y., Toma, F. M. & Sharp, I. D. Fabrication of Planar Heterojunction Perovskite Solar Cells by Controlled Low-Pressure Vapor Annealing. J. Phys. Chem. Lett ., 6, 493-499, DOI: 10.1021/jz502720a (2015). Scientific Achievement A new synthetic method based on low-pressure and reduced-temperature vapor annealing was developed and demonstrated to yield efficient hybrid halide perovskites

  1. Photovoltaic devices based on high density boron-doped single-walled carbon nanotube/n-Si heterojunctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Saini, Viney; Li, Zhongrui; Bourdo, Shawn; Kunets, Vasyl P.; Trigwell, Steven; Couraud, Arthur; Rioux, Julien; Boyer, Cyril; Nteziyaremye, Valens; Dervishi, Enkeleda; et al

    2011-01-13

    A simple and easily processible photovoltaic device has been developed based on borondoped single-walled carbon nanotubes (B-SWNTs) and n-type silicon (n-Si) heterojunctions. The single-walled carbon nanotubes (SWNTs) were substitutionally doped with boron atoms by thermal annealing, in the presence of B2O3. The samples used for these studies were characterized by Raman spectroscopy, thermal gravimetric analysis (TGA), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS). The fully functional solar cell devices were fabricated by airbrush deposition that generated uniform B-SWNT films on top of the n-Si substrates. The carbon nanotube films acted as exciton-generation sites, charge collection and transportation, whilemore » the heterojunctions formed between B-SWNTs and n-Si acted as charge dissociation centers. The current-voltage characteristics in the absence of light and under illumination, as well as optical transmittance spectrum are reported here. It should be noted that the device fabrication process can be made amenable to scalability by depositing direct and uniform films using airbrushing, inkjet printing, or spin-coating techniques.« less

  2. Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

    SciTech Connect (OSTI)

    Chowdhury, Zahidur R. Kherani, Nazir P.

    2014-12-29

    This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxideplasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparent passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are V{sub OC} of 666?mV, J{sub SC} of 29.5?mA-cm{sup ?2}, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.

  3. Explosive bulk charge

    DOE Patents [OSTI]

    Miller, Jacob Lee

    2015-04-21

    An explosive bulk charge, including: a first contact surface configured to be selectively disposed substantially adjacent to a structure or material; a second end surface configured to selectively receive a detonator; and a curvilinear side surface joining the first contact surface and the second end surface. The first contact surface, the second end surface, and the curvilinear side surface form a bi-truncated hemispherical structure. The first contact surface, the second end surface, and the curvilinear side surface are formed from an explosive material. Optionally, the first contact surface and the second end surface each have a substantially circular shape. Optionally, the first contact surface and the second end surface consist of planar structures that are aligned substantially parallel or slightly tilted with respect to one another. The curvilinear side surface has one of a smooth curved geometry, an elliptical geometry, and a parabolic geometry.

  4. Creating bulk nanocrystalline metal.

    SciTech Connect (OSTI)

    Fredenburg, D. Anthony; Saldana, Christopher J.; Gill, David D.; Hall, Aaron Christopher; Roemer, Timothy John; Vogler, Tracy John; Yang, Pin

    2008-10-01

    Nanocrystalline and nanostructured materials offer unique microstructure-dependent properties that are superior to coarse-grained materials. These materials have been shown to have very high hardness, strength, and wear resistance. However, most current methods of producing nanostructured materials in weapons-relevant materials create powdered metal that must be consolidated into bulk form to be useful. Conventional consolidation methods are not appropriate due to the need to maintain the nanocrystalline structure. This research investigated new ways of creating nanocrystalline material, new methods of consolidating nanocrystalline material, and an analysis of these different methods of creation and consolidation to evaluate their applicability to mesoscale weapons applications where part features are often under 100 {micro}m wide and the material's microstructure must be very small to give homogeneous properties across the feature.

  5. Microfabricated bulk wave acoustic bandgap device (Patent) |...

    Office of Scientific and Technical Information (OSTI)

    Microfabricated bulk wave acoustic bandgap device Title: Microfabricated bulk wave acoustic bandgap device A microfabricated bulk wave acoustic bandgap device comprises a periodic ...

  6. Bulk Data Mover

    Energy Science and Technology Software Center (OSTI)

    2011-01-03

    Bulk Data Mover (BDM) is a high-level data transfer management tool. BDM handles the issue of large variance in file sizes and a big portion of small files by managing the file transfers with optimized transfer queue and concurrency management algorithms. For example, climate simulation data sets are characterized by large volume of files with extreme variance in file sizes. The BDN achieves high performance using a variety of techniques, including multi-thraded concurrent transfer connections,more » data channel caching, load balancing over multiple transfer servers, and storage i/o pre-fetching. Logging information from the BDM is collected and analyzed to study the effectiveness of the transfer management algorithms. The BDM can accept a request composed of multiple files or an entire directory. The request also contains the target site and directory where the replicated files will reside. If a directory is provided at the source, then the BDM will replicate the structure of the source directory at the target site. The BDM is capable of transferring multiple files concurrently as well as using parallel TCP streams. The optimal level of concurrency or parallel streams depends on the bandwidth capacity of the storage systems at both ends of the transfer as well as achievable bandwidth of the wide-area network. Hardware req.-PC, MAC, Multi-platform & Workstation; Software req.: Compile/version-Java 1.50_x or ablove; Type of files: source code, executable modules, installation instructions other, user guide; URL: http://sdm.lbl.gov/bdm/« less

  7. Performance optimization of solar cells based on colloidal lead sulfide nanocrystals

    SciTech Connect (OSTI)

    Ulfa, Maria

    2014-02-24

    Colloidal semiconducting quantum dot nanocrystals (NCs) have attracted extensive interest as active building-block for low-cost solution-processed photovoltaic due to their size tunable absorption from the visible to near IR. Among various nanocrystal composition, lead sulfide (PbS), having a bulk bandgap of 0.41 eV, are particularly attractive for photovoltaic applications due to their excellent photosensitivity in the near IR. Starting from colloidal synthesis, in this project functional solar cells are fabricated and characterized based on the nearly monodispersed colloidal PbS nanocrystals that we synthesized. These NC-solar cells are fabricated under a “depleted heterojunction” device architecture containing a planar “tipe II” heretojunction formed by a layer of electron-transporting TiO{sub 2} and a layer of PbS NCs. Relevant structural, optical, and electrical characterizations are performed on NCs and their devices. To understand the operational mechanism of these NC-based solar cells, various material and device aspects are investigated in this work aiming for optimized photovoltaic performance. These aspects include the effect of: (1) NC dimensions (and thus their band gaps); (2) passivation of surface traps through post-synthesis treatments; (3) NC surface ligand-exchange; and (4) interfacial modifications at the heterojunction. The most optimized photovoltaic performance is found after combining the surface trap passivation strategy by halides, ligand-exchange by 3-mercaptopropionic acids, and interfacial TiCl4 treatment, leading to a peak open-circuit voltage of 0.53 V, a short-circuit current density of 14.03 mAcm{sup −2}, and a power conversion efficiency of 3.25%.

  8. Commercialization of Bulk Thermoelectric Materials for Power...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Commercialization of Bulk Thermoelectric Materials for Power Generation Commercialization of Bulk Thermoelectric Materials for Power Generation Critical aspects of technology ...

  9. Layered insulator hexagonal boron nitride for surface passivation in quantum dot solar cell

    SciTech Connect (OSTI)

    Shanmugam, Mariyappan; Jain, Nikhil; Jacobs-Gedrim, Robin; Yu, Bin; Xu, Yang

    2013-12-09

    Single crystalline, two dimensional (2D) layered insulator hexagonal boron nitride (h-BN), is demonstrated as an emerging material candidate for surface passivation on mesoporous TiO{sub 2}. Cadmium selenide (CdSe) quantum dot based bulk heterojunction (BHJ) solar cell employed h-BN passivated TiO{sub 2} as an electron acceptor exhibits photoconversion efficiency ?46% more than BHJ employed unpassivated TiO{sub 2}. Dominant interfacial recombination pathways such as electron capture by TiO{sub 2} surface states and recombination with hole at valence band of CdSe are efficiently controlled by h-BN enabled surface passivation, leading to improved photovoltaic performance. Highly crystalline, confirmed by transmission electron microscopy, dangling bond-free 2D layered h-BN with self-terminated atomic planes, achieved by chemical exfoliation, enables efficient passivation on TiO{sub 2}, allowing electronic transport at TiO{sub 2}/h-BN/CdSe interface with much lower recombination rate compared to an unpassivated TiO{sub 2}/CdSe interface.

  10. Imaging the Solar Cell P-N Junction and Depletion Region Using Secondary Electron Contrast

    SciTech Connect (OSTI)

    Heath, J. T.; Jiang, C. S.; Al-Jassim, M. M.

    2011-01-01

    We report on secondary electron (SE) images of cross-sectioned multicrystalline Si and GaAs/GaInP solar cell devices, focusing on quantifying the relationship between the apparent n{sup +}-p contrast and characteristic electronic features of the device. These samples allow us to compare the SE signal from devices which have very different physical characteristics: differing materials, diffused junction versus abrupt junction, heterojunction versus homojunction. Despite these differences, we find that the SE image contrast for both types of sample, and as a function of reverse bias across the diode, closely agrees with PC1D simulations of the bulk electrostatic potential in the device, accurately yielding the depletion edge and width. A spatial derivative of the SE data shows a local maximum at the metallurgical junction. Such data are valuable, for example, in studying the conformity of a diffused junction to the textured surface topography. These data also extend our understanding of the origin of the SE contrast.

  11. Experimental determination of band offsets of NiO-based thin film heterojunctions

    SciTech Connect (OSTI)

    Kawade, Daisuke; Sugiyama, Mutsumi, E-mail: mutsumi@rs.noda.tus.ac.jp [Faculty of Science and Technology/Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Chichibu, Shigefusa F. [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 9808577 (Japan)

    2014-10-28

    The energy band diagrams of NiO-based solar cell structures that use various n-type oxide semiconductors such as ZnO, Mg{sub 0.3}Zn{sub 0.7}O, Zn{sub 0.5}Sn{sub 0.5}O, In{sub 2}O{sub 3}:Sn (ITO), SnO{sub 2}, and TiO{sub 2} were evaluated by photoelectron yield spectroscopy. The valence band discontinuities were estimated to be 1.6?eV for ZnO/NiO and Mg{sub 0.3}Zn{sub 0.7}O/NiO, 1.7?eV for Zn{sub 0.5}Sn{sub 0.5}O/NiO and ITO/NiO, and 1.8?eV for SnO{sub 2}/NiO and TiO{sub 2}/NiO heterojunctions. By using the valence band discontinuity values and corresponding energy bandgaps of the layers, energy band diagrams were developed. Judging from the band diagram, an appropriate solar cell consisting of p-type NiO and n-type ZnO layers was deposited on ITO, and a slight but noticeable photovoltaic effect was obtained with an open circuit voltage (V{sub oc}) of 0.96?V, short circuit current density (J{sub sc}) of 2.2??A/cm{sup 2}, and fill factor of 0.44.

  12. Solar collection

    SciTech Connect (OSTI)

    Cole, S.L.

    1984-08-01

    This report contains summaries and pictures of projects funded by the Appropriate Technology Small Grants Program which include the following solar technologies: solar dish; photovoltaics; passive solar building and solar hot water system; Trombe wall; hot air panel; hybrid solar heating system; solar grain dryer; solar greenhouse; solar hot water workshops; and solar workshops.

  13. RAPID/Solar/Land Access/Nevada | Open Energy Information

    Open Energy Info (EERE)

    RAPIDSolarLand AccessNevada < RAPID | Solar | Land Access Jump to: navigation, search RAPID Regulatory and Permitting Information Desktop Toolkit BETA About Bulk...

  14. Thin film cadmium telluride and zinc phosphide solar cells

    SciTech Connect (OSTI)

    Chu, T.

    1984-10-01

    This report describes research performed from June 1982 to October 1983 on the deposition of cadmium telluride films by direct combination of the cadmium and tellurium vapor on foreign substrates. Nearly stoichiometric p-type cadmium telluride films and arsenic-doped p-type films have been prepared reproducibly. Major efforts were directed to the deposition and characterization of heterojunction window materials, indium tin oxide, fluorine-doped tin oxide, cadmium oxide, and zinc oxide. A number of heterojunction solar cells were prepared, and the best thin-film ITO/CdTe solar cells had an AMl efficiency of about 7.2%. Zinc phosphide films were deposited on W/steel substrates by the reaction of zinc and phosphine in a hydrogen flow. Films without intentional doping had an electrical resistivity on the order of 10/sup 6/ ohm-cm, and this resistivity may be reduced to about 5 x 10/sup 4/ ohm-cm by adding hydrogen chloride or hydrogen bromide to the reaction mixture. Lower resistivity films were deposited by adding a controlled amount of silver nitrate solution on to the substrate surface. Major efforts were directed to the deposition of low-resistivity zinc selenide in order to prepare ZnSe/An/sub 3/P/sub 2/ heterojunction thin-film solar cells. However, zinc selenide films deposited by vacuum evaporation and chemical vapor deposition techniques were all of high resistivity.

  15. Band alignment and interfacial structure of ZnO/Si heterojunction...

    Office of Scientific and Technical Information (OSTI)

    of ZnOSi heterojunction with Alsub 2Osub 3 and HfOsub 2 as interlayers Citation Details In-Document Search Title: Band alignment and interfacial structure of ZnOSi ...

  16. Influence of oriented topological defects on the mechanical properties of carbon nanotube heterojunctions

    SciTech Connect (OSTI)

    Lee, We-Jay [National Center for High-Performance Computing; Chang, Jee-Gong [National Center for High-Performance Computing; Yang, An-Cheng [National Center for High-Performance Computing; Wang, Yeng-Tseng [National Center for High-Performance Computing; Su, Wan-Sheng [National Center for High-Performance Computing; Wang, Cai-Zhuang [Ames Laboratory; Ho, Kai-Ming [Ames Laboratory

    2013-10-10

    The mechanical properties of finite-length (5,0)/(8,0) single-walled carbon nanotube (SWCNT) heterojunctions with manipulated topological defects are investigated using molecular dynamics simulation calculations. The results show that the mechanical properties and deformation behavior of SWCNT heterojunctions are mainly affected not only by the diameter of the thinner segment of the SWCNT heterojunction but also by the orientation of the heptagon-heptagon (7-7) pair in the junction region. Moreover, the orientation of the 7-7 pair strongly affects those properties in the compression loading than those in tensile loading. Finally, it is found that the location of buckling deformation in the heterojunctions is dependent on the orientation of the 7-7 pair in the compression.

  17. Community Shared Solar with Solarize | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Community Shared Solar with Solarize Community Shared Solar with Solarize

  18. Substantial bulk photovoltaic effect enhancement via nanolayering

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Fenggong; Young, Steve M.; Zheng, Fan; Grinberg, Ilya; Rappe, Andrew M.

    2016-01-21

    Spontaneous polarization and inversion symmetry breaking in ferroelectric materials lead to their use as photovoltaic devices. However, further advancement of their applications are hindered by the paucity of ways of reducing bandgaps and enhancing photocurrent. By unravelling the correlation between ferroelectric materials’ responses to solar irradiation and their local structure and electric polarization landscapes, here we show from first principles that substantial bulk photovoltaic effect enhancement can be achieved by nanolayering PbTiO3 with nickel ions and oxygen vacancies ((PbNiO2)x(PbTiO3)1–x). The enhancement of the total photocurrent for different spacings between the Ni-containing layers can be as high as 43 times duemore » to a smaller bandgap and photocurrent direction alignment for all absorption energies. This is due to the electrostatic effect that arises from nanolayering. Lastly, this opens up the possibility for control of the bulk photovoltaic effect in ferroelectric materials by nanoscale engineering of their structure and composition.« less

  19. Switching behaviors of graphene-boron nitride nanotube heterojunctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Parashar, Vyom; Durand, Corentin P.; Hao, Boyi; Amorim, Rodrigo G.; Pandey, Ravindra; Tiwari, Bishnu; Zhang, Dongyan; Liu, Yang; Li, An -Ping; Yap, Yoke Khin

    2015-07-20

    High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digital switches. These graphene-BNNT heterojunctions were characterized at room temperature by four-probe scanning tunneling microscopy (4-probe STM) under real-time monitoring of scanning electron microscopy (SEM). A switching ratio as high as 105 at a turn-on voltage as low as 0.5more » V were recorded. Simulation by density functional theory (DFT) suggests that mismatch of the density of states (DOS) is responsible for these novel switching behaviors.« less

  20. Switching behaviors of graphene-boron nitride nanotube heterojunctions

    SciTech Connect (OSTI)

    Parashar, Vyom; Durand, Corentin P.; Hao, Boyi; Amorim, Rodrigo G.; Pandey, Ravindra; Tiwari, Bishnu; Zhang, Dongyan; Liu, Yang; Li, An -Ping; Yap, Yoke Khin

    2015-07-20

    High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digital switches. These graphene-BNNT heterojunctions were characterized at room temperature by four-probe scanning tunneling microscopy (4-probe STM) under real-time monitoring of scanning electron microscopy (SEM). A switching ratio as high as 105 at a turn-on voltage as low as 0.5 V were recorded. Simulation by density functional theory (DFT) suggests that mismatch of the density of states (DOS) is responsible for these novel switching behaviors.

  1. Optimizing the fabrication process and interplay of device components of polymer solar cells using a field-based multiscale solar-cell algorithm

    SciTech Connect (OSTI)

    Donets, Sergii; Pershin, Anton; Baeurle, Stephan A.

    2015-05-14

    Both the device composition and fabrication process are well-known to crucially affect the power conversion efficiency of polymer solar cells. Major advances have recently been achieved through the development of novel device materials and inkjet printing technologies, which permit to improve their durability and performance considerably. In this work, we demonstrate the usefulness of a recently developed field-based multiscale solar-cell algorithm to investigate the influence of the material characteristics, like, e.g., electrode surfaces, polymer architectures, and impurities in the active layer, as well as post-production treatments, like, e.g., electric field alignment, on the photovoltaic performance of block-copolymer solar-cell devices. Our study reveals that a short exposition time of the polymer bulk heterojunction to the action of an external electric field can lead to a low photovoltaic performance due to an incomplete alignment process, leading to undulated or disrupted nanophases. With increasing exposition time, the nanophases align in direction to the electric field lines, resulting in an increase of the number of continuous percolation paths and, ultimately, in a reduction of the number of exciton and charge-carrier losses. Moreover, we conclude by modifying the interaction strengths between the electrode surfaces and active layer components that a too low or too high affinity of an electrode surface to one of the components can lead to defective contacts, causing a deterioration of the device performance. Finally, we infer from the study of block-copolymer nanoparticle systems that particle impurities can significantly affect the nanostructure of the polymer matrix and reduce the photovoltaic performance of the active layer. For a critical volume fraction and size of the nanoparticles, we observe a complete phase transformation of the polymer nanomorphology, leading to a drop of the internal quantum efficiency. For other particle-numbers and -sizes, we observe only a local perturbation of the nanostructure, diminishing the number of continuous percolation paths to the electrodes and, therefore, reducing the device performance. From these investigations, we conclude that our multiscale solar-cell algorithm is an effective approach to investigate the impact of device materials and post-production treatments on the photovoltaic performance of polymer solar cells.

  2. Bulk Electronic Structure of Quasicrystals (Journal Article)...

    Office of Scientific and Technical Information (OSTI)

    Bulk Electronic Structure of Quasicrystals Prev Next Title: Bulk Electronic Structure of Quasicrystals Authors: Nayak, J. ; Maniraj, M. ; Rai, Abhishek ; Singh, Sanjay ; ...

  3. Bulk Electronic Structure of Quasicrystals (Journal Article)...

    Office of Scientific and Technical Information (OSTI)

    Bulk Electronic Structure of Quasicrystals Citation Details In-Document Search Title: Bulk Electronic Structure of Quasicrystals Authors: Nayak, J. ; Maniraj, M. ; Rai, Abhishek ; ...

  4. Recent Device Developments with Advanced Bulk Thermoelectric...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Recent Device Developments with Advanced Bulk Thermoelectric Materials at RTI Reviews work in engineered thin-film nanoscale thermoelectric materials and nano-bulk materials with ...

  5. RAPID/BulkTransmission | Open Energy Information

    Open Energy Info (EERE)

    regulatory processes and requirements by searching our regulatory flowchart library. Learn more about bulk transmission. BulkTransCoverage.png Regulations and permitting...

  6. Nanostructured High Temperature Bulk Thermoelectric Energy Conversion...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    High Temperature Bulk Thermoelectric Energy Conversion for Efficient Waste Heat Recovery Nanostructured High Temperature Bulk Thermoelectric Energy Conversion for Efficient Waste ...

  7. Method for making graded I-III-VI.sub.2 semiconductors and solar cell obtained thereby

    DOE Patents [OSTI]

    Devaney, Walter E.

    1987-08-04

    Improved cell photovoltaic conversion efficiencies are obtained by the simultaneous elemental reactive evaporation process of Mickelsen and Chen for making semiconductors by closer control of the evaporation rates and substrate temperature during formation of the near contact, bulk, and near junction regions of a graded I-III-VI.sub.2, thin film, semiconductor, such as CuInSe.sub.2 /(Zn,Cd)S or another I-III-VI.sub.2 /II-VI heterojunction.

  8. Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mahjouri-Samani, Masoud; Lin, Ming-Wei; Wang, Kai; Lupini, Andrew R.; Lee, Jaekwang; Basile, Leonardo; Boulesbaa, Abdelaziz; Rouleau, Christopher M.; Puretzky, Alexander A.; Ivanov, Ilia N.; et al

    2015-01-01

    The formation of semiconductor heterojunctions and their high density integration are foundations of modern electronics and optoelectronics. To enable two-dimensional (2D) crystalline semiconductors as building blocks in next generation electronics, developing methods to deterministically form lateral heterojunctions is crucial. Here we demonstrate a process strategy for the formation of lithographically-patterned lateral semiconducting heterojunctions within a single 2D crystal. E-beam lithography is used to pattern MoSe2 monolayer crystals with SiO2, and the exposed locations are selectively and totally converted to MoS2 using pulsed laser deposition (PLD) of sulfur in order to form MoSe2/MoS2 heterojunctions in predefined patterns. The junctions and conversionmore » process are characterized by atomically resolved scanning transmission electron microscopy, photoluminescence, and Raman spectroscopy. This demonstration of lateral semiconductor heterojunction arrays within a single 2D crystal is an essential step for the lateral integration of 2D semiconductor building blocks with different electronic and optoelectronic properties for high-density, ultrathin circuitry.« less

  9. A small-signal generator based on a multi-layer graphene/molybdenum disulfide heterojunction

    SciTech Connect (OSTI)

    Tan, Zhen; Tian, He; Feng, Tingting; Zhao, Lianfeng; Xie, Dan; Yang, Yi; Xiao, Lei; Wang, Jing; Ren, Tian-Ling E-mail: JunXu@tsinghua.edu.cn; Xu, Jun E-mail: JunXu@tsinghua.edu.cn

    2013-12-23

    In this work, we fabricate a heterojunction small-signal generator (HSSG) based on a graphene-molybdenum disulfide (MoS{sub 2}) heterojunction. The HSSG is fundamentally different from any analog device developed previously. The HSSG is composed of two quasi-2D heterojunctions and has three terminals named injector (I), recombinator (R), and generator (G). MoS{sub 2} serves as I and G, and graphene works as R in the HSSG. The scale coefficient (??=?I{sub G}/I{sub R}) of the HSSG is 1.14??10{sup ?4} (V{sub IG,?IR}?=?0.2?V) to 1.95??10{sup ?4} (V{sub IG,?IR}?=?1?V). The current generated from G could be as low as pA scale, which reveals the good performance of the HSSG.

  10. Band alignment and interfacial structure of ZnO/Si heterojunction with

    Office of Scientific and Technical Information (OSTI)

    Al{sub 2}O{sub 3} and HfO{sub 2} as interlayers (Journal Article) | SciTech Connect Band alignment and interfacial structure of ZnO/Si heterojunction with Al{sub 2}O{sub 3} and HfO{sub 2} as interlayers Citation Details In-Document Search Title: Band alignment and interfacial structure of ZnO/Si heterojunction with Al{sub 2}O{sub 3} and HfO{sub 2} as interlayers Energy band alignment of ZnO/Si heterojunction with thin interlayers Al{sub 2}O{sub 3} and HfO{sub 2} grown by atomic layer

  11. Solar Newsletter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power ... Sciences Applications National Solar Thermal Test Facility Nuclear Energy ...

  12. Visualizing the photovoltaic behavior of a type-II p-n heterojunction superstructure

    SciTech Connect (OSTI)

    Xing, Juanjuan; Takeguchi, Masaki; Hashimoto, Ayako; Cao, Junyu; Ye, Jinhua

    2014-04-21

    Photovoltaic behavior of a CaFe{sub 2}O{sub 4}/ZnFe{sub 2}O{sub 4} p-n multi-junction was investigated with electron holography combined with an in situ light irradiation system. Potential profiles of the samples with and without light irradiation were extracted to measure the open circuit photovoltage generated either by the whole heterojunction superstructure or from each p-n junction. Investigation on the variation in the energy band configuration under light irradiation revealed the mechanism involved in the photoelectric effect, with respect to the properties of the heterojunction and its periodic quantum structure.

  13. Self-Propagating Molecular Assemblies as Interlayers for Efficient Inverted Build-Heterojunction Solar Cells

    SciTech Connect (OSTI)

    Motiei, L.; Yao, Y.; Choudhury, J.; Yan, Hao; Marks, Tobin J.; Van de Boom, M. E.; Facchetti, Antonio

    2010-09-15

    Here we report the first use of self-propagating molecule-based assemblies (SPMAs) as efficient electron-transporting layers for inverted organic photovoltaic (OPV) cells. P3HT-PCBM cells functionalized with optimized SPMAs exhibit power conversion efficiencies approaching 3.6% (open circuit voltage = 0.6 V) vs 1.5% and 2.4% for the bare ITO and Cs{sub 2}CO{sub 3}-coated devices, respectively. The dependence of cell response parameters on interlayer thickness is investigated, providing insight into how to further optimize device performance.

  14. Thermoelectric Bulk Materials from the Explosive Consolidation...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Thermoelectric Bulk Materials from the Explosive Consolidation of Nanopowders Describes technique of explosively consolidating nanopowders to yield fully dense, consolidated, ...

  15. Bulk Tritium Shipping Package | Department of Energy

    Office of Environmental Management (EM)

    Package Bulk Tritium Shipping Package Presentation from the 32nd Tritium Focus Group Meeting held in Germantown, Maryland on April 23-25, 2013. PDF icon Bulk Tritium Shipping Package More Documents & Publications Bulk Tritium Shipping Package Overview and Status Managing Legacy Materials at WETF FAQS Reference Guide - NNSA Package Certification Engineer

  16. Solar Easements

    Broader source: Energy.gov [DOE]

    New Hampshire's "solar skyspace easement" provisions allow property owners to create solar easements in order to create and preserve a right to unobstructed access to solar energy. Easements remain...

  17. Solar Power

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Power Solar Power Project Opportunities Abound in the Region The WIPP site is receives abundant solar energy with 6-7 kWhsq meter power production potential As the ...

  18. Center for Energy Nanoscience at USC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    L. Improving open circuit potential in hybrid P3HT:CdSe bulk heterojunction solar cells via colloidal tert-butylthiol ligand exchange ACS Nano, 6(5), 4222-30 (2012). DOI:...

  19. Solar Newsletter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy Goes Big: Launching the California Valley Solar Ranch Solar Goes Big: Launching the California Valley Solar Ranch October 31, 2013 - 4:14pm Addthis The California Valley Solar Ranch produces clean, renewable electricity at the scale of traditional power plants. | Photo courtesy of SunPower. The California Valley Solar Ranch produces clean, renewable electricity at the scale of traditional power plants. | Photo courtesy of SunPower. Aerial shot of the California Valley Solar Ranch in

  20. Solar Decathlon

    Broader source: Energy.gov [DOE]

    The Energy Department's Solar Decathlon challenges collegiate teams to design, build and operate solar-powered houses that are cost effective, energy efficient and attractive.

  1. Solar Newsletter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Events, Photovoltaic, Renewable Energy, Research & Capabilities, Solar, Solar Newsletter, SunShot, ... The system will be monitored and tested to collect a range of data ...

  2. Solar Decathlon

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... and workforce development opportunity for ... around the world: Solar Decathlon China 2013, Solar Decathlon ... and two-way power flow for operation of ...

  3. Single Molecule Spectroelectrochemistry of Interfacial Charge Transfer Dynamics In Hybrid Organic Solar Cell

    SciTech Connect (OSTI)

    Pan, Shanlin

    2014-11-16

    Our research under support of this DOE grant is focused on applied and fundamental aspects of model organic solar cell systems. Major accomplishments are: 1) we developed a spectroelectorchemistry technique of single molecule single nanoparticle method to study charge transfer between conjugated polymers and semiconductor at the single molecule level. The fluorescence of individual fluorescent polymers at semiconductor surfaces was shown to exhibit blinking behavior compared to molecules on glass substrates. Single molecule fluorescence excitation anisotropy measurements showed the conformation of the polymer molecules did not differ appreciably between glass and semiconductor substrates. The similarities in molecular conformation suggest that the observed differences in blinking activity are due to charge transfer between fluorescent polymer and semiconductor, which provides additional pathways between states of high and low fluorescence quantum efficiency. Similar spectroelectrochemistry work has been done for small organic dyes for understand their charge transfer dynamics on various substrates and electrochemical environments; 2) We developed a method of transferring semiconductor nanoparticles (NPs) and graphene oxide (GO) nanosheets into organic solvent for a potential electron acceptor in bulk heterojunction organic solar cells which employed polymer semiconductor as the electron donor. Electron transfer from the polymer semiconductor to semiconductor and GO in solutions and thin films was established through fluorescence spectroscopy and electroluminescence measurements. Solar cells containing these materials were constructed and evaluated using transient absorption spectroscopy and dynamic fluorescence techniques to understand the charge carrier generation and recombination events; 3) We invented a spectroelectorchemistry technique using light scattering and electroluminescence for rapid size determination and studying electrochemistry of single NPs in an electrochemical cell. For example, we are able to use this technique to track electroluminescence of single Au NPs, and the electrodeposition of individual Ag NPs in-situ. These metallic NPs are useful to enhance light harvesting in organic photovoltaic systems. The scattering at the surface of an indium tin oxide (ITO) working electrode was measured during a potential sweep. Utilizing Mie scattering theory and high resolution scanning electron microscopy (SEM), the scattering data were used to calculate current-potential curves depicting the electrodeposition of individual Ag NPs. The oxidation of individual presynthesized and electrodeposited Ag NPs was also investigated using fluorescence and DFS microscopies. Our work has produced 1 US provisional patent, 15 published manuscripts, 1 submitted and two additional in-writing manuscripts. 5 graduate students, 1 postdoctoral student, 1 visiting professor, and two undergraduate students have received research training in the area of electrochemistry and optical spectroscopy under support of this award.

  4. Heterojunction band offsets and dipole formation at BaTiO{sub 3}/SrTiO{sub 3} interfaces

    SciTech Connect (OSTI)

    Balaz, Snjezana; Zeng, Zhaoquan; Brillson, Leonard J.; Department of Physics, The Ohio State University, 191 West Woodruff, Columbus, Ohio 43210

    2013-11-14

    We used a complement of photoemission and cathodoluminescence techniques to measure formation of the BaTiO{sub 3} (BTO) on SrTiO{sub 3} (STO) heterojunction band offset grown monolayer by monolayer by molecular beam epitaxy. X-ray photoemission spectroscopy (XPS) provided core level and valence band edge energies to monitor the valence band offset in-situ as the first few crystalline BTO monolayers formed on the STO substrate. Ultraviolet photoemission spectroscopy (UPS) measured Fermi level positions within the band gap, work functions, and ionization potentials of the growing BTO film. Depth-resolved cathodoluminescence spectroscopy measured energies and densities of interface states at the buried heterojunction. Kraut-based XPS heterojunction band offsets provided evidence for STO/BTO heterojunction linearity, i.e., commutativity and transitivity. In contrast, UPS and XPS revealed a large dipole associated either with local charge transfer or strain-induced polarization within the BTO epilayer.

  5. Low voltage tunneling magnetoresistance in CuCrO{sub 2}-based semiconductor heterojunctions at room temperature

    SciTech Connect (OSTI)

    Li, X. R.; Han, M. J.; Shan, C.; Hu, Z. G. Zhu, Z. Q.; Chu, J. H.; Wu, J. D.

    2014-12-14

    CuCrO{sub 2}-based heterojunction diodes with rectifying characteristics have been fabricated by combining p-type Mg-doped CuCrO{sub 2} and n-type Al-doped ZnO. It was found that the current for the heterojunction in low bias voltage region is dominated by the trap-assisted tunneling mechanism. Positive magnetoresistance (MR) effect for the heterojunction can be observed at room temperature due to the tunneling-induced antiparallel spin polarization near the heterostructure interface. The MR effect becomes enhanced with the magnetic field, and shows the maximum at a bias voltage around 0.5 V. The phenomena indicate that the CuCrO{sub 2}-based heterojunction is a promising candidate for low-power semiconductor spintronic devices.

  6. Synthesis of bulk superhard semiconducting B-C material (Journal...

    Office of Scientific and Technical Information (OSTI)

    Synthesis of bulk superhard semiconducting B-C material Citation Details In-Document Search Title: Synthesis of bulk superhard semiconducting B-C material A bulk composite ...

  7. RAPID/BulkTransmission/Air Quality | Open Energy Information

    Open Energy Info (EERE)

    BulkTransmissionAir Quality < RAPID | BulkTransmission Jump to: navigation, search RAPID Regulatory and Permitting Information Desktop Toolkit BETA About Bulk Transmission...

  8. Region Solar Inc Solar Inc California Renewable Energy Solar...

    Open Energy Info (EERE)

    Point Drive Fort Collins Colorado Solar Solar cell passive solar architectural glass solar grid tie inverter semiconductor flat panel display data storage http www advanced...

  9. RAPID/Bulk Transmission | Open Energy Information

    Open Energy Info (EERE)

    Page Edit History RAPIDBulk Transmission < RAPID(Redirected from RAPIDOverviewBulkTransmission) Redirect page Jump to: navigation, search REDIRECT RAPIDBulkTransmission...

  10. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  11. Thin-layer black phosphorous/GaAs heterojunction p-n diodes

    SciTech Connect (OSTI)

    Gehring, Pascal; Urcuyo, Roberto; Duong, Dinh Loc; Burghard, Marko; Kern, Klaus

    2015-06-08

    Owing to its high carrier mobility and thickness-tunable direct band gap, black phosphorous emerges as a promising component of optoelectronic devices. Here, we evaluate the device characteristics of p-n heterojunction diodes wherein thin black phosphorous layers are interfaced with an underlying, highly n-doped GaAs substrate. The p-n heterojunctions exhibit close-to-ideal diode behavior at low bias, while under illumination they display a photoresponse that is evenly distributed over the entire junction area, with an external quantum efficiency of up to 10% at zero bias. Moreover, the observed maximum open circuit voltage of 0.6 V is consistent with the band gap estimated for a black phosphorous sheet with a thickness on the order of 10?nm. Further analysis reveals that the device performance is limited by the structural quality of the black phosphorous surface.

  12. Thin-film polycrystalline n-ZnO/p-CuO heterojunction

    SciTech Connect (OSTI)

    Lisitski, O. L.; Kumekov, M. E.; Kumekov, S. E. Terukov, E. I.

    2009-06-15

    Results of X-ray diffraction and spectral-optical studies of n-ZnO and p-CuO films deposited by gas-discharge sputtering with subsequent annealing are presented. It is shown that, despite the difference in the crystal systems, the polycrystallinity of n-ZnO and p-CuO films enables fabrication of a heterojunction from this pair of materials.

  13. Mojave Solar Park Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Solar Park Solar Power Plant Jump to: navigation, search Name Mojave Solar Park Solar Power Plant Facility Mojave Solar Park Sector Solar Facility Type Concentrating Solar Power...

  14. Nevada Solar One Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Solar One Solar Power Plant Jump to: navigation, search Name Nevada Solar One Solar Power Plant Facility Nevada Solar One Sector Solar Facility Type Concentrating Solar Power...

  15. Starwood Solar I Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Starwood Solar I Solar Power Plant Jump to: navigation, search Name Starwood Solar I Solar Power Plant Facility Starwood Solar I Sector Solar Facility Type Concentrating Solar...

  16. Correlating High Power Conversion Efficiency of PTB7:PC71BM Inverted Organic Solar Cells with Nanoscale Structures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Das, Sanjib; Keum, Jong Kahk; Browning, Jim; Gu, Gong; Yang, Bin; Do, Changwoo; Chen, Wei; Chen, Jihua; Ivanov, Ilia N; Hong, Kunlun; et al

    2015-01-01

    Advances in materials design and device engineering led to inverted organic solar cells (i-OSCs) with superior power conversion efficiencies (PCEs) to their conventional counterparts, in addition to the well-known better ambient stability. Despite the significant progress, however, it has so far been unclear how the morphologies of the photoactive layer and its interface with the cathode modifying layer impact device performance. Here, we report an in-depth morphology study of the i-OSC active and cathode modifying layers, employing a model system with the well-established bulk-heterojunction, PTB7:PC71BM as the active layer and poly-[(9,9-bis(3 -(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) as the cathode surface modifying layer. Wemore » have also identified the role of a processing additive, 1,8-diiodooctane (DIO), used in the spin-casting of the active layer to increase PCE. Using a variety of characterization techniques, we demonstrate that the high PCEs of i-OSCs are due to the smearing (diffusion) of electron-accepting PC71BM into the PFN layer, resulting in improved electron transport. The PC71BM diffusion occurs after spin-casting the active layer onto the PFN layer, when residual solvent molecules act as a plasticizer. The DIO additive, with a higher boiling point than the host solvent, has a longer residence time in the spin-cast active layer, resulting in more PC71BM smearing and therefore more efficient electron transport. This work provides important insight and guidance to further enhancement of i-OSC performance by materials and interface engineering.« less

  17. Correlating High Power Conversion Efficiency of PTB7:PC71BM Inverted Organic Solar Cells to Nanoscale Structure

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Das, Sanjib; Keum, Jong Kahk; Browning, Jim; Gu, Gong; Yang, Bin; Do, Changwoo; Chen, Wei; Chen, Jihua; Ivanov, Ilia N; Hong, Kunlun; et al

    2015-07-16

    Advances in materials design and device engineering led to inverted organic solar cells (i-OSCs) with superior power conversion efficiencies (PCEs) to their conventional counterparts, in addition to the well-known better ambient stability. Despite the significant progress, however, it has so far been unclear how the morphologies of the photoactive layer and its interface with the cathode modifying layer impact device performance. Here, we report an in-depth morphology study of the i-OSC active and cathode modifying layers, employing a model system with the well-established bulk-heterojunction, PTB7:PC71BM as the active layer and poly-[(9,9-bis(3 -(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) as the cathode surface modifying layer. Wemorehave also identified the role of a processing additive, 1,8-diiodooctane (DIO), used in the spin-casting of the active layer to increase PCE. Using a variety of characterization techniques, we demonstrate that the high PCEs of i-OSCs are due to the smearing (diffusion) of electron-accepting PC71BM into the PFN layer, resulting in improved electron transport. The PC71BM diffusion occurs after spin-casting the active layer onto the PFN layer, when residual solvent molecules act as a plasticizer. The DIO additive, with a higher boiling point than the host solvent, has a longer residence time in the spin-cast active layer, resulting in more PC71BM smearing and therefore more efficient electron transport. This work provides important insight and guidance to further enhancement of i-OSC performance by materials and interface engineering.less

  18. ImagineSolar | Open Energy Information

    Open Energy Info (EERE)

    Workforce training, Corporate consulting - Solar projects, Solar sales, Solar marketing, Solar business development, Solar policy, Solar advocacy, Solar government...

  19. Solar Manufacturing Projects | Department of Energy

    Energy Savers [EERE]

    Solar Manufacturing Projects Solar Manufacturing Projects Solar Manufacturing Projects Solar Manufacturing Projects Solar Manufacturing Projects Solar Manufacturing Projects SOLAR ...

  20. Solar Rights

    Broader source: Energy.gov [DOE]

    In the context of this law, a solar energy device is a system "manufactured and sold for the sole purpose of facilitating the collection and beneficial use of solar energy, including passive...

  1. Solar Blog

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    96426 Solar Blog en Solar Energy Jobs Outpace U.S. Economy http:energy.govarticlessolar-energy-jobs-outpace-us-economy

  2. Solar Rights

    Broader source: Energy.gov [DOE]

    Cities and counties in North Carolina generally may not adopt ordinances prohibiting the installation of "a solar collector that gathers solar radiation as a substitute for traditional energy for...

  3. Solar Rights

    Broader source: Energy.gov [DOE]

    A solar energy system is defined as "a system affixed to a building or buildings that uses solar devices, which are thermally isolated from living space or any other area where the energy is used...

  4. Solar Forecasting

    Broader source: Energy.gov [DOE]

    On December 7, 2012, DOE announced $8 million to fund two solar projects that are helping utilities and grid operators better forecast when, where, and how much solar power will be produced at U.S....

  5. Wind and Solar Curtailment: Preprint

    SciTech Connect (OSTI)

    Lew, D.; Bird, L.; Milligan, M.; Speer, B.; Wang, X.; Carlini, E. M.; Estanqueiro, A.; Flynn, D.; Gomez-Lazaro, E.; Menemenlis, N.; Orths, A.; Pineda, I.; Smith, J. C.; Soder, L.; Sorensen, P.; Altiparmakis, A.; Yoh, Y.

    2013-09-01

    High penetrations of wind and solar generation on power systems are resulting in increasing curtailment. Wind and solar integration studies predict increased curtailment as penetration levels grow. This paper examines experiences with curtailment on bulk power systems internationally. It discusses how much curtailment is occurring, how it is occurring, why it is occurring, and what is being done to reduce curtailment. This summary is produced as part of the International Energy Agency Wind Task 25 on Design and Operation of Power Systems with Large Amounts of Wind Power.

  6. Solar synthesis of advanced materials: A solar industrial program initiative

    SciTech Connect (OSTI)

    Lewandowski, A.

    1992-06-01

    This is an initiative for accelerating the use of solar energy in the advanced materials manufacturing industry in the United States. The initiative will be based on government-industry collaborations that will develop the technology and help US industry compete in the rapidly expanding global advanced materials marketplace. Breakthroughs in solar technology over the last 5 years have created exceptional new tools for developing advanced materials. Concentrated sunlight from solar furnaces can produce intensities that approach those on the surface of the sun and can generate temperatures well over 2000{degrees}C. Very thin layers of illuminated surfaces can be driven to remarkably high temperatures in a fraction of a second. Concentrated solar energy can be delivered over large areas, allowing for rapid processing and high production rates. By using this technology, researchers are transforming low-cost raw materials into high-performance products. Solar synthesis of advanced materials uses bulk materials and energy more efficiently, lowers processing costs, and reduces the need for strategic materials -- all with a technology that does not harm the environment. The Solar Industrial Program has built a unique, world class solar furnace at NREL to help meet the growing need for applied research in advanced materials. Many new advanced materials processes have been successfully demonstrated in this facility, including the following: Metalorganic deposition, ceramic powders, diamond-like carbon materials, rapid heat treating, and cladding (hard coating).

  7. Solar collectors

    SciTech Connect (OSTI)

    Cassidy, V.M.

    1981-11-01

    Practical applications of solar energy in commercial, industrial and institutional buildings are considered. Two main types of solar collectors are described: flat plate collectors and concentrating collectors. Efficiency of air and hydronic collectors among the flat plate types are compared. Also several concentrators are described, including their sun tracking mechanisms. Descriptions of some recent solar installations are presented and a list representing the cross section of solar collector manufacturers is furnished.

  8. Solar Easements

    Broader source: Energy.gov [DOE]

    In addition, the state’s local zoning ordinances must address access to air and light, views, and solar access.

  9. Solar Newsletter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Facilities Battery Abuse Testing Laboratory Cylindrical Boiling Facility Distributed Energy Technology Lab Microsystems and Engineering Sciences Applications National Solar ...

  10. Solar Newsletter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    National Solar Thermal Test Facility Nuclear ... Climate & Earth Systems Climate Measurement & Modeling ... Tribal Energy Program Intellectual Property Current EC ...

  11. Doped Interlayers for Improved Selectivity in Bulk Herterojunction Organic Photovoltaic Devices

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mauger, Scott A.; Glasser, Melodie P.; Tremolet de Villers, Bertrand J.; Duong, Vincent V.; Ayzner, Alexander L.; Olson, Dana C.

    2016-01-21

    Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is less selective for holes in inverted-architecture organic photovoltaic (OPV) than it is in a conventional-architecture OPV device due differences between the interfacial-PSS concentration at the top and bottom of the PEDOT:PSS layer. In this work, thin layers of polysulfonic acids are inserted between the P3HT:ICBA bulk heterojunction (BHJ) active layer and PEDOT:PSS to create a higher concentration of acid at this interface and, therefore, mimic the distribution of materials present in a conventional device. Upon thermal annealing, this acid layer oxidizes P3HT, creating a thin p-type interlayer of P3HT+/acid- on top of the BHJ. Using x-raymore » absorption spectroscopy, Kelvin probe and ellipsometry measurements, this P3HT+/acid- layer is shown to be insoluble in water, indicating it remains intact during the subsequent deposition of PEDOT:PSS. Current density - voltage measurements show this doped interlayer reduces injected dark current while increasing both open-circuit voltage and fill factor through the creation of a more hole selective BHJ-PEDOT:PSS interface.« less

  12. bulk power system | OpenEI Community

    Open Energy Info (EERE)

    Dc(266) Contributor 31 October, 2014 - 10:58 What do you know about the grid? black out brown out bulk power system electricity grid future grid grid history security Smart Grid...

  13. RAPID/BulkTransmission/Transmission Siting & Interconnection...

    Open Energy Info (EERE)

    federal review). Bulk Transmission Transmission Siting & Interconnection in New Mexico New Mexico Statutes (N.M.S.) 62-9-1, 62-9-3(B), and 62-9-3.2 No Location Permit may be...

  14. Overview of Western's Interconnected Bulk Electric System

    Energy Savers [EERE]

    Western's Interconnected Bulk Electric System Western Area Power Admin. Objectives * Describe Western Area Power Administration Region and Facilities Overview * Explain Fundamentals of Electricity, Power Transformers and Transmission Lines * Discuss Overview of the Bulk Electric System (BES) * Objectives Review Western's Service Area Western marketing areas and offices 3 Wholesale Power Services * Markets 10,479 MW from 56 Federal hydropower projects owned by Bureau of Reclamation (BOR) , Army

  15. Numerical simulation: Toward the design of high-efficiency planar perovskite solar cells

    SciTech Connect (OSTI)

    Liu, Feng; Zhu, Jun E-mail: sydai@ipp.ac.cn; Wei, Junfeng; Li, Yi; Lv, Mei; Yang, Shangfeng; Zhang, Bing; Yao, Jianxi; Dai, Songyuan E-mail: sydai@ipp.ac.cn

    2014-06-23

    Organo-metal halide perovskite solar cells based on planar architecture have been reported to achieve remarkably high power conversion efficiency (PCE, >16%), rendering them highly competitive to the conventional silicon based solar cells. A thorough understanding of the role of each component in solar cells and their effects as a whole is still required for further improvement in PCE. In this work, the planar heterojunction-based perovskite solar cells were simulated with the program AMPS (analysis of microelectronic and photonic structures)-1D. Simulation results revealed a great dependence of PCE on the thickness and defect density of the perovskite layer. Meanwhile, parameters including the work function of the back contact as well as the hole mobility and acceptor density in hole transport materials were identified to significantly influence the performance of the device. Strikingly, an efficiency over 20% was obtained under the moderate simulation conditions.

  16. Methods for improving solar cell open circuit voltage

    DOE Patents [OSTI]

    Jordan, John F.; Singh, Vijay P.

    1979-01-01

    A method for producing a solar cell having an increased open circuit voltage. A layer of cadmium sulfide (CdS) produced by a chemical spray technique and having residual chlorides is exposed to a flow of hydrogen sulfide (H.sub.2 S) heated to a temperature of 400.degree.-600.degree. C. The residual chlorides are reduced and any remaining CdCl.sub.2 is converted to CdS. A heterojunction is formed over the CdS and electrodes are formed. Application of chromium as the positive electrode results in a further increase in the open circuit voltage available from the H.sub.2 S-treated solar cell.

  17. El Dorado Solar Project Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Solar Project Solar Power Plant Jump to: navigation, search Name El Dorado Solar Project Solar Power Plant Facility El Dorado Solar Project Sector Solar Facility Type Photovoltaic...

  18. Beacon Solar Energy Project Solar Power Plant | Open Energy Informatio...

    Open Energy Info (EERE)

    Solar Energy Project Solar Power Plant Jump to: navigation, search Name Beacon Solar Energy Project Solar Power Plant Facility Beacon Solar Energy Project Sector Solar Facility...

  19. Deming Solar Plant Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Deming Solar Plant Solar Power Plant Jump to: navigation, search Name Deming Solar Plant Solar Power Plant Facility Deming Solar Plant Sector Solar Facility Type Photovoltaic...

  20. SES Calico Solar One Project Solar Power Plant | Open Energy...

    Open Energy Info (EERE)

    Calico Solar One Project Solar Power Plant Jump to: navigation, search Name SES Calico Solar One Project Solar Power Plant Facility SES Calico Solar One Project Sector Solar...

  1. Nvision.Solar - Ravnishte Solar PV Plant | Open Energy Information

    Open Energy Info (EERE)

    Solar - Ravnishte Solar PV Plant Jump to: navigation, search Name Nvision.Solar - Ravnishte Solar PV Plant Facility Ravishte roof and facade mounted solar power plant Sector Solar...

  2. Solar Millenium Palen Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Palen Solar Power Plant Jump to: navigation, search Name Solar Millenium Palen Solar Power Plant Facility Solar Millenium Palen Sector Solar Facility Type Concentrating Solar Power...

  3. SES Solar Two Project Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Two Project Solar Power Plant Jump to: navigation, search Name SES Solar Two Project Solar Power Plant Facility SES Solar Two Project Sector Solar Facility Type Concentrating Solar...

  4. Prescott Airport Solar Plant Solar Power Plant | Open Energy...

    Open Energy Info (EERE)

    Prescott Airport Solar Plant Solar Power Plant Jump to: navigation, search Name Prescott Airport Solar Plant Solar Power Plant Facility Prescott Airport Solar Plant Sector Solar...

  5. Carrizo Energy Solar Farm Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Carrizo Energy Solar Farm Solar Power Plant Jump to: navigation, search Name Carrizo Energy Solar Farm Solar Power Plant Facility Carrizo Energy Solar Farm Sector Solar Facility...

  6. Mechanisms of charge transport in anisotype n-TiO{sub 2}/p-CdTe heterojunctions

    SciTech Connect (OSTI)

    Brus, V. V.; Ilashchuk, M. I.; Kovalyuk, Z. D.; Maryanchuk, P. D.; Ulyanytsky, K. S.; Gritsyuk, B. N.

    2011-08-15

    Surface-barrier anisotype n-TiO{sub 2}/p-CdTe heterojunctions are fabricated by depositing thin titanium-dioxide films on a freshly cleaved surface of single-crystalline cadmium-telluride wafers by reactive magnetron sputtering. It is established that the electric current through the heterojunctions under investigation is formed by generation-recombination processes in the space-charge region via a deep energy level and tunneling through the potential barrier. The depth and nature of the impurity centers involved in the charge transport are determined.

  7. Research Program - Center for Solar and Thermal Energy Conversion

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    In the Inorganic PV thrust, we develop nanostructured materials architectures for solar energy conversion by engineering absorption and transport properties not available in the bulk. In particular, we aim to exploit unique quantum effects at the nanoscale which are promising for the realization of new paradigms in solar energy conversion such as intermediate band or hot carrier solar cells. Thrust Leaders: Prof. Rachel Goldman (MSE)&nbspand Prof. Jamie Phillips (EECS) Recent Publications -

  8. NREL: Concentrating Solar Power Research - Concentrating Solar...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Concentrating Solar Power Resource Maps These direct-normal solar radiation maps-filtered by solar resource and land availability-identify the most economically suitable lands ...

  9. Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate Presenter: Arpan Chakraborty, Soraa Inc. This ...

  10. A new class of high ZT doped bulk nanothermoelectrics through...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    bulk nanothermoelectrics through bottom-up synthesis A new class of high ZT doped bulk nanothermoelectrics through bottom-up synthesis Reports on synthesis of large quantities of ...

  11. Lithium Ion Solvation and Diffusion in Bulk Organic Electrolytes...

    Office of Scientific and Technical Information (OSTI)

    in Bulk Organic Electrolytes from First Principles Molecular Dynamics Citation Details In-Document Search Title: Lithium Ion Solvation and Diffusion in Bulk Organic ...

  12. CMI Unique Facility: Bulk Combinatoric Materials Synthesis Facility...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bulk Combinatoric Materials Synthesis Facility The Bulk Combinatoric Materials Synthesis Facility is one of half a dozen unique facilities developed by the Critical Materials...

  13. RAPID/Overview/BulkTransmission/Siting/Colorado | Open Energy...

    Open Energy Info (EERE)

    Colorado < RAPID | Overview | BulkTransmission | Siting(Redirected from RAPIDAtlasBulkTransmissionSitingColorado) Redirect page Jump to: navigation, search REDIRECT...

  14. Regulatory Roadmap Workshop for Federal Bulk Transmission Regulations...

    Open Energy Info (EERE)

    for bulk transmission. Date: Tuesday, 29 July, 2014 - 09:30 - 15:30 Location: NREL Education Center Auditorium Golden, Colorado Groups: Federal Bulk Transmission Regulatory...

  15. RAPID/BulkTransmission/Land Use | Open Energy Information

    Open Energy Info (EERE)

    RAPIDBulkTransmissionLand Use < RAPID | BulkTransmission Jump to: navigation, search RAPID Regulatory and Permitting Information Desktop Toolkit BETA About Bulk Transmission...

  16. April 5 PSERC Webinar: Seamless Bulk Electric Grid Management...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    5 PSERC Webinar: Seamless Bulk Electric Grid Management: A Platform for Designing the Next Generation EMS April 5 PSERC Webinar: Seamless Bulk Electric Grid Management: A Platform ...

  17. RAPID/BulkTransmission/General Construction | Open Energy Information

    Open Energy Info (EERE)

    RAPIDBulkTransmissionGeneral Construction < RAPID | BulkTransmission Jump to: navigation, search RAPID Regulatory and Permitting Information Desktop Toolkit BETA About Bulk...

  18. RAPID/BulkTransmission/Water Use | Open Energy Information

    Open Energy Info (EERE)

    RAPIDBulkTransmissionWater Use < RAPID | BulkTransmission Jump to: navigation, search RAPID Regulatory and Permitting Information Desktop Toolkit BETA About Bulk Transmission...

  19. RAPID/BulkTransmission/Power Plant | Open Energy Information

    Open Energy Info (EERE)

    RAPIDBulkTransmissionPower Plant < RAPID | BulkTransmission Jump to: navigation, search RAPID Regulatory and Permitting Information Desktop Toolkit BETA About Bulk...

  20. Micro benchtop optics by bulk silicon micromachining

    DOE Patents [OSTI]

    Lee, Abraham P.; Pocha, Michael D.; McConaghy, Charles F.; Deri, Robert J.

    2000-01-01

    Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

  1. Correlating High Power Conversion Efficiency of PTB7:PC71BM Inverted Organic Solar Cells with Nanoscale Structures

    SciTech Connect (OSTI)

    Das, Sanjib; Keum, Jong Kahk; Browning, Jim; Gu, Gong; Yang, Bin; Do, Changwoo; Chen, Wei; Chen, Jihua; Ivanov, Ilia N; Hong, Kunlun; Rondinone, Adam J.; Joshi, Pooran C.; Geohegan, David B.; Xiao, Kai

    2015-07-16

    Advances in materials design and device engineering led to inverted organic solar cells (i-OSCs) with superior power conversion efficiencies (PCEs) to their conventional counterparts, in addition to the well-known better ambient stability. Despite the significant progress, however, it has so far been unclear how the morphologies of the photoactive layer and its interface with the cathode modifying layer impact device performance. Here, we report an in-depth morphology study of the i-OSC active and cathode modifying layers, employing a model system with the well-established bulk-heterojunction, PTB7:PC71BM as the active layer and poly-[(9,9-bis(3 -(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) as the cathode surface modifying layer. We have also identified the role of a processing additive, 1,8-diiodooctane (DIO), used in the spin-casting of the active layer to increase PCE. Using a variety of characterization techniques, we demonstrate that the high PCEs of i-OSCs are due to the smearing (diffusion) of electron-accepting PC71BM into the PFN layer, resulting in improved electron transport. The PC71BM diffusion occurs after spin-casting the active layer onto the PFN layer, when residual solvent molecules act as a plasticizer. The DIO additive, with a higher boiling point than the host solvent, has a longer residence time in the spin-cast active layer, resulting in more PC71BM smearing and therefore more efficient electron transport. This work provides important insight and guidance to further enhancement of i-OSC performance by materials and interface engineering.

  2. Solar Newsletter

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas ...

  3. Solar Rights

    Broader source: Energy.gov [DOE]

    Ordinances, bylaws, or regulations may reasonably restrict the installation and use of solar energy devices to protect public health and safety, buildings from damage, historic/aesthetic values (...

  4. Solar Mapper

    Broader source: Energy.gov [DOE]

    Interactive, online mapping tool providing access to spatial data related to siting utility-scale solar facilities in the southwestern United States.

  5. Photovoltaic Solar Projects | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Photovoltaic Solar Projects Photovoltaic Solar Projects Photovoltaic Solar Projects Photovoltaic Solar Projects Photovoltaic Solar Projects Photovoltaic Solar Projects Photovoltaic ...

  6. Unified Solar

    Broader source: Energy.gov [DOE]

    Unified Solar is an MIT startup that is commercializing an integrated circuit solution that eliminates most of the adverse effects caused by partial shading in photovoltaic power systems. With its patent-pending design, Unified Solar's solution is smaller, cheaper and more powerful than any competing power optimizer in the market.

  7. Boston, Massachusetts: Solar in Action (Brochure)

    SciTech Connect (OSTI)

    Not Available

    2011-10-01

    This brochure provides an overview of the challenges and successes of Boston, MA, a 2007 Solar America City awardee, on the path toward becoming a solar-powered community. Accomplishments, case studies, key lessons learned, and local resource information are given. The City of Boston and its Solar America Cities program, Solar Boston, are helping to debunk the myth that solar energy is only feasible in the southern latitudes. Boston has some of the highest energy prices in the country and will likely be one of the first locations where solar power achieves grid parity with conventional energy technologies. Solar Boston is facilitating the rapid development of solar energy projects and infrastructure in the short-term, and is preparing for the rapid market growth that is expected with the imminent arrival of grid parity over the long-term. Solar Boston developed the strategy for achieving Mayor Menino's goal of installing 25 MW of solar energy throughout Boston by 2015. Through Solar Boston, the city has developed a strategy for the installation of solar technology throughout Boston, including mapping feasible locations, preparing a permitting guide, and planning the citywide bulk purchase, financing, and installation of solar technology. The city has also worked with local organizations to maximize Boston's participation in state incentive programs and innovative financing initiatives. The resulting accomplishments include the following: (1) Created an online map of current local renewable energy projects with a tool to allow building owners to calculate their rooftop solar potential. The map is currently live at http://gis.cityofboston.gov/solarboston/. (2) Supported the city's Green Affordable Housing Program (GAHP), in partnership with the Department of Neighborhood Development (DND). Under GAHP, the city is installing more than 150 kW of PV on 200 units of affordable housing. DND requires that all new city-funded affordable housing be LEED silver certified and built solar-ready. (3) Defined solar's role in emergency preparedness with the Boston Mayor's Office of Emergency Preparedness. (4) Worked with local organizations to maximize Boston's participation in state incentive programs and innovative financing mechanisms. Solar Boston partners include DOE, MTC, local utilities and unions, an anonymous foundation, and a broad range of local, regional, and national clean-energy stakeholders. Solar Boston kicked off its partner program on January 10, 2008, sponsoring a workshop on 'Thinking BIG about Boston's Solar Energy Future,' to discuss how state, utility, and municipal programs can work together. Presentations were given by Solar Boston, Keyspan/National Grid, NSTAR, and MTC.

  8. STATIONARITY IN SOLAR WIND FLOWS

    SciTech Connect (OSTI)

    Perri, S.; Balogh, A. E-mail: a.balogh@imperial.ac.u

    2010-05-01

    By using single-point measurements in space physics it is possible to study a phenomenon only as a function of time. This means that we cannot have direct access to information about spatial variations of a measured quantity. However, the investigation of the properties of turbulence and of related phenomena in the solar wind widely makes use of an approximation frequently adopted in hydrodynamics under certain conditions, the so-called Taylor hypothesis; indeed, the solar wind flow has a bulk velocity along the radial direction which is much higher than the velocity of a single turbulent eddy embedded in the main flow. This implies that the time of evolution of the turbulent features is longer than the transit time of the flow through the spacecraft position, so that the turbulent field can be considered frozen into the solar wind flow. This assumption allows one to easily associate time variations with spatial variations and stationarity to homogeneity. We have investigated, applying criteria for weak stationarity to Ulysses magnetic field data in different solar wind regimes, at which timescale and under which conditions the hypothesis of stationarity, and then of homogeneity, of turbulence in the solar wind is well justified. We extend the conclusions of previous studies by Matthaeus and Goldstein to different parameter ranges in the solar wind. We conclude that the stationarity assumption in the inertial range of turbulence on timescales of 10 minutes to 1 day is reasonably satisfied in fast and uniform solar wind flows, but that in mixed, interacting fast, and slow solar wind streams the assumption is frequently only marginally valid.

  9. Sandia Energy - Solar Resource Assessment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Resource Assessment Home Stationary Power Energy Conversion Efficiency Solar Energy Photovoltaics Solar Resource Assessment Solar Resource AssessmentTara...

  10. Sandia Energy - Solar Market Transformation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Market Transformation Home Stationary Power Energy Conversion Efficiency Solar Energy Photovoltaics Solar Market Transformation Solar Market TransformationTara...

  11. Thin-film solar cell fabricated on a flexible metallic substrate

    DOE Patents [OSTI]

    Tuttle, John R.; Noufi, Rommel; Hasoon, Falah S.

    2006-05-30

    A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

  12. Development of Highly-Efficient GaInP/Si Tandem Solar Cells

    SciTech Connect (OSTI)

    Essig, Stephanie; Geisz, John F.; Steiner, Myles A.; Merkle, Agnes; Peibst, Robby; Schmidt, Jan; Brendel, Rolf; Ward, Scott; Friedman, Daniel J.; Stradins, Paul; Young, David L.

    2015-06-14

    Dual-junction solar cells consisting of rear-heterojunction GaInP top cells and back-junction, back-contacted crystalline Si bottom cells were fabricated and characterized. Our calculations show that theoretical efficiencies up to 38.9% can be achieved with Si-based tandem devices. In our experiments, the two subcells were fabricated separately and stacked with an index matching fluid. In contrast to conventional mechanically stacked solar cells, that contain two metal grids at the interface, our concept includes a fully back contacted bottom cell which reduces the shadow losses in the device. A 1-sun AM1.5g cumulative efficiency of (26.2 +/- 0.6)% has been achieved with this novel GaInP/Si 4-terminal tandem solar cell.

  13. New concepts for high efficiency energy conversion: The avalanche heterostructure and superlattice solar cells

    SciTech Connect (OSTI)

    Summers, C.J.; Rohatgi, A.; Torabi, A.; Harris, H.M. )

    1993-01-01

    This report describes investigation into the theory and technology of a novel heterojunction or superlattice, single-junction solar cell, which injects electrons across the heterointerface to produce highly efficient impact ionization of carriers in the lowband-gap side of the junction, thereby conserving their total energy. Also, the superlattice structure has the advantage of relaxing the need for perfect lattice matching at the p-n interface and will inhibit the cross diffusion of dopant atoms that typically occurs in heavy doping. This structure avoids the use of tunnel junctions that make it very difficult to achieve the predicted efficiencies in cascade cells, thus making it possible to obtain energy efficiencies that are competitive with those predicted for cascade solar cells with reduced complexity and cost. This cell structure could also be incorporated into other solar cell structures designed for wider spectral coverage.

  14. Thin-Film Solar Cell Fabricated on a Flexible Metallic Substrate

    DOE Patents [OSTI]

    Tuttle, J. R.; Noufi, R.; Hasoon, F. S.

    2006-05-30

    A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

  15. Solar Two

    SciTech Connect (OSTI)

    Not Available

    1998-04-01

    Solar Two is a concentrating solar power plant that can supply electric power on demand to the local utility, Southern California Edison Company. It can do so because it operates not only during sunny parts of the day, but it can store enough thermal energy from the sun to operate during cloudy periods and after dark, for up to three hours, at its rated output of 10 megawatts (MW). For the first time ever, a utility scale solar power plant can supply electricity when the utility needs it most, to satisfy the energy requirements of its customers.

  16. Control of morphology and function of low band gap polymer bis-fullerene mixed heterojunctions in organic photovoltaics with selective solvent vapor annealing.

    SciTech Connect (OSTI)

    Chen, Huipeng; Hsiao, Yu-Che; Dadmun, Mark D

    2014-01-01

    Replacing PCBM with a bis-adduct fullerene (i.e. ICBA) has been reported to significantly improve the open circuit voltage (VOC) and power conversion efficiency (PCE) in P3HT bulk heterojunctions. However, for the most promising low band-gap polymer (LBP) systems, replacing PCBM with ICBA results in very poor shortcircuit current (JSC) and PCE although the VOC is significantly improved. Therefore, in this work, we have completed small angle neutron scattering and neutron reflectometry experiments to study the impact of post-deposition solvent annealing (SA) with control of solvent quality on the morphology and performance of LBP bis-fullerene BHJ photovoltaics. The results show that SA in a solvent that is selective for the LBP results in a depletion of bis-fullerene near the air surface, which limits device performance. SA in a solvent vapor which has similar solubility for polymer and bis-fullerene results in a higher degree of polymer ordering, bis-fullerene phase separation, and segregation of the bis-fullerene to the air surface, which facilitates charge transport and increases power conversion efficiency (PCE) by 100%. The highest degree of polymer ordering combined with significant bis-fullerene phase separation and segregation of bis-fullerene to the air surface is obtained by SA in a solvent vapor that is selective for the bis-fullerene. The resultant morphology increases PCE by 190%. These results indicate that solvent annealing with judicious solvent choice provides a unique tool to tune the morphology of LBP bisfullerene BHJ system, providing sufficient polymer ordering, formation of a bis-fullerene pure phase, and segregation of bis-fullerene to the air surface to optimize the morphology of the active layer. Moreover, this process is broadly applicable to improving current disappointing LBP bis-fullerene systems to optimize their morphology and OPV performance post-deposition, including higher VOC and power conversion efficiency.

  17. Control of morphology and function of low band gap polymer-bis-fullerene mixed heterojunctions in organic photovoltaics with selection solvent vapor annealing

    SciTech Connect (OSTI)

    Chen, Huipeng; Hsiao, Yu-Che; Hu, Bin; Dadmun, Mark D

    2014-01-01

    Replacing PCBM with a bis-adduct fullerene (i.e. ICBA) has been reported to significantly improve the open circuit voltage (VOC) and power conversion efficiency (PCE) in P3HT bulk heterojunctions. However, for the most promising low band-gap polymer (LBP) systems, replacing PCBM with ICBA results in very poor shortcircuit current (JSC) and PCE although the VOC is significantly improved. Therefore, in this work, we have completed small angle neutron scattering and neutron reflectometry experiments to study the impact of post-deposition solvent annealing (SA) with control of solvent quality on the morphology and performance of LBP bis-fullerene BHJ photovoltaics. The results show that SA in a solvent that is selective for the LBP results in a depletion of bis-fullerene near the air surface, which limits device performance. SA in a solvent vapor which has similar solubility for polymer and bis-fullerene results in a higher degree of polymer ordering, bis-fullerene phase separation, and segregation of the bis-fullerene to the air surface, which facilitates charge transport and increases power conversion efficiency (PCE) by 100%. The highest degree of polymer ordering combined with significant bis-fullerene phase separation and segregation of bis-fullerene to the air surface is obtained by SA in a solvent vapor that is selective for the bis-fullerene. The resultant morphology increases PCE by 190%. These results indicate that solvent annealing with judicious solvent choice provides a unique tool to tune the morphology of LBP bisfullerene BHJ system, providing sufficient polymer ordering, formation of a bis-fullerene pure phase, and segregation of bis-fullerene to the air surface to optimize the morphology of the active layer. Moreover, this process is broadly applicable to improving current disappointing LBP bis-fullerene systems to optimize their morphology and OPV performance post-deposition, including higher VOC and power conversion efficiency.

  18. PROJECT PROFILE: Solar Electric Power Association (Solar Market...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Solar Electric Power Association (Solar Market Pathways) PROJECT PROFILE: Solar Electric Power Association (Solar Market Pathways) Title: Community Solar Design Models for ...

  19. Solar Millenium Ridgecrest Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Ridgecrest Solar Power Plant Jump to: navigation, search Name Solar Millenium Ridgecrest Solar Power Plant Facility Solar Millenium Ridgecrest Sector Solar Facility Type...

  20. SES Solar Three Project Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Three Project Solar Power Plant Jump to: navigation, search Name SES Solar Three Project Solar Power Plant Facility SES Solar Three Project Sector Solar Facility Type Photovoltaics...

  1. Renewable Energy Concepts Solar Inc REC Solar | Open Energy Informatio...

    Open Energy Info (EERE)

    Concepts Solar Inc REC Solar Jump to: navigation, search Name: Renewable Energy Concepts Solar Inc (REC Solar) Place: San Luis Obispo, California Zip: 93401 Sector: Solar Product:...

  2. Microfabricated bulk wave acoustic bandgap device

    DOE Patents [OSTI]

    Olsson, Roy H.; El-Kady, Ihab F.; McCormick, Frederick; Fleming, James G.; Fleming, Carol

    2010-06-08

    A microfabricated bulk wave acoustic bandgap device comprises a periodic two-dimensional array of scatterers embedded within the matrix material membrane, wherein the scatterer material has a density and/or elastic constant that is different than the matrix material and wherein the periodicity of the array causes destructive interference of the acoustic wave within an acoustic bandgap. The membrane can be suspended above a substrate by an air or vacuum gap to provide acoustic isolation from the substrate. The device can be fabricated using microelectromechanical systems (MEMS) technologies. Such microfabricated bulk wave phononic bandgap devices are useful for acoustic isolation in the ultrasonic, VHF, or UHF regime (i.e., frequencies of order 1 MHz to 10 GHz and higher, and lattice constants of order 100 .mu.m or less).

  3. Microfabricated bulk wave acoustic bandgap device

    DOE Patents [OSTI]

    Olsson, Roy H.; El-Kady, Ihab F.; McCormick, Frederick; Fleming, James G.; Fleming, legal representative, Carol

    2010-11-23

    A microfabricated bulk wave acoustic bandgap device comprises a periodic two-dimensional array of scatterers embedded within the matrix material membrane, wherein the scatterer material has a density and/or elastic constant that is different than the matrix material and wherein the periodicity of the array causes destructive interference of the acoustic wave within an acoustic bandgap. The membrane can be suspended above a substrate by an air or vacuum gap to provide acoustic isolation from the substrate. The device can be fabricated using microelectromechanical systems (MEMS) technologies. Such microfabricated bulk wave phononic bandgap devices are useful for acoustic isolation in the ultrasonic, VHF, or UHF regime (i.e., frequencies of order 1 MHz to 10 GHz and higher, and lattice constants of order 100 .mu.m or less).

  4. Modeling direct interband tunneling. I. Bulk semiconductors

    SciTech Connect (OSTI)

    Pan, Andrew; Chui, Chi On

    2014-08-07

    Interband tunneling is frequently studied using the semiclassical Kane model, despite uncertainty about its validity. Revisiting the physical basis of this formula, we find that it neglects coupling to other bands and underestimates transverse tunneling. As a result, significant errors can arise at low and high fields for small and large gap materials, respectively. We derive a simple multiband tunneling model to correct these defects analytically without arbitrary parameters. Through extensive comparison with band structure and quantum transport calculations for bulk InGaAs, InAs, and InSb, we probe the accuracy of the Kane and multiband formulas and establish the superiority of the latter. We also show that the nonlocal average electric field should be used when applying either of these models to nonuniform potentials. Our findings are important for efficient analysis and simulation of bulk semiconductor devices involving tunneling.

  5. DEMONSTRATION BULK VITRIFICATION SYSTEM (DBVS) EXTERNAL REVIEW

    SciTech Connect (OSTI)

    HONEYMAN, J.O.

    2007-02-08

    The Hanford mission to retrieve and immobilize 53 million gallons of radioactive waste from 177 underground storage tanks will be accomplished using a combination of processing by the waste treatment plant currently under construction, and a supplemental treatment that would process low-activity waste. Under consideration for this treatment is bulk vitrification, a versatile joule-heated melter technology which could be deployed in the tank farms. The Department proposes to demonstrate this technology under a Research, Development and Demonstration (RD and D) permit issued by the Washington State Department of Ecology using both non-radioactive simulant and blends of actual tank waste. From the demonstration program, data would be obtained on cost and technical performance to enable a decision on the potential use of bulk vitrification as the supplemental treatment technology for Hanford. An independent review by sixteen subject matter experts was conducted to assure that the technical basis of the demonstration facility design would be adequate to meet the objectives of the Demonstration Bulk Vitrification System (DBVS) program. This review explored all aspects of the program, including flowsheet chemistry, project risk, vitrification, equipment design and nuclear safety, and was carried out at a time when issues can be identified and corrected. This paper describes the mission need, review approach, technical recommendations and follow-on activities for the DBVS program.

  6. Hydrogen isotope separation utilizing bulk getters

    DOE Patents [OSTI]

    Knize, R.J.; Cecchi, J.L.

    1991-08-20

    Tritium and deuterium are separated from a gaseous mixture thereof, derived from a nuclear fusion reactor or some other source, by providing a casing with a bulk getter therein for absorbing the gaseous mixture to produce an initial loading of the getter, partially desorbing the getter to produce a desorbed mixture which is tritium-enriched, pumping the desorbed mixture into a separate container, the remaining gaseous loading in the getter being deuterium-enriched, desorbing the getter to a substantially greater extent to produce a deuterium-enriched gaseous mixture, and removing the deuterium-enriched mixture into another container. The bulk getter may comprise a zirconium-aluminum alloy, or a zirconium-vanadium-iron alloy. The partial desorption may reduce the loading by approximately fifty percent. The basic procedure may be extended to produce a multistage isotope separator, including at least one additional bulk getter into which the tritium-enriched mixture is absorbed. The second getter is then partially desorbed to produce a desorbed mixture which is further tritium-enriched. The last-mentioned mixture is then removed from the container for the second getter, which is then desorbed to a substantially greater extent to produce a desorbed mixture which is deuterium-enriched. The last-mentioned mixture is then removed so that the cycle can be continued and repeated. The method of isotope separation is also applicable to other hydrogen isotopes, in that the method can be employed for separating either deuterium or tritium from normal hydrogen. 4 figures.

  7. Hydrogen isotope separation utilizing bulk getters

    DOE Patents [OSTI]

    Knize, Randall J. (Los Angeles, CA); Cecchi, Joseph L. (Lawrenceville, NJ)

    1990-01-01

    Tritium and deuterium are separated from a gaseous mixture thereof, derived from a nuclear fusion reactor or some other source, by providing a casing with a bulk getter therein for absorbing the gaseous mixture to produce an initial loading of the getter, partially desorbing the getter to produce a desorbed mixture which is tritium-enriched, pumping the desorbed mixture into a separate container, the remaining gaseous loading in the getter being deuterium-enriched, desorbing the getter to a substantially greater extent to produce a deuterium-enriched gaseous mixture, and removing the deuterium-enriched mixture into another container. The bulk getter may comprise a zirconium-aluminum alloy, or a zirconium-vanadium-iron alloy. The partial desorption may reduce the loading by approximately fifty percent. The basic procedure may be extended to produce a multistage isotope separator, including at least one additional bulk getter into which the tritium-enriched mixture is absorbed. The second getter is then partially desorbed to produce a desorbed mixture which is further tritium-enriched. The last-mentioned mixture is then removed from the container for the second getter, which is then desorbed to a substantially greater extent to produce a desorbed mixture which is deuterium-enriched. The last-mentioned mixture is then removed so that the cycle can be continued and repeated. The method of isotope separation is also applicable to other hydrogen isotopes, in that the method can be employed for separating either deuterium or tritium from normal hydrogen.

  8. Hydrogen isotope separation utilizing bulk getters

    DOE Patents [OSTI]

    Knize, Randall J. (Los Angeles, CA); Cecchi, Joseph L. (Lawrenceville, NJ)

    1991-01-01

    Tritium and deuterium are separated from a gaseous mixture thereof, derived from a nuclear fusion reactor or some other source, by providing a casing with a bulk getter therein for absorbing the gaseous mixture to produce an initial loading of the getter, partially desorbing the getter to produce a desorbed mixture which is tritium-enriched, pumping the desorbed mixture into a separate container, the remaining gaseous loading in the getter being deuterium-enriched, desorbing the getter to a substantially greater extent to produce a deuterium-enriched gaseous mixture, and removing the deuterium-enriched mixture into another container. The bulk getter may comprise a zirconium-aluminum alloy, or a zirconium-vanadium-iron alloy. The partial desorption may reduce the loading by approximately fifty percent. The basic procedure may be extended to produce a multistage isotope separator, including at least one additional bulk getter into which the tritium-enriched mixture is absorbed. The second getter is then partially desorbed to produce a desorbed mixture which is further tritium-enriched. The last-mentioned mixture is then removed from the container for the second getter, which is then desorbed to a substantially greater extent to produce a desorbed mixture which is deuterium-enriched. The last-mentioned mixture is then removed so that the cycle can be continued and repeated. The method of isotope separation is also applicable to other hydrogen isotopes, in that the method can be employed for separating either deuterium or tritium from normal hydrogen.

  9. Solar Circuitry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Time: 4 to 5 class periods Summary: Students will learn how the solar cell changes light energy to electrical energy. Students will work in small groups and construct different ...

  10. solar energy

    National Nuclear Security Administration (NNSA)

    8%2A en Solar power purchase for DOE laboratories http:nnsa.energy.govmediaroompressreleasessolarpower

  11. solar power

    National Nuclear Security Administration (NNSA)

    9%2A en Solar power purchase for DOE laboratories http:nnsa.energy.govmediaroompressreleasessolarpower

  12. Solar Rights

    Broader source: Energy.gov [DOE]

    In June of 2015, SB 1626 was signed into law. It provides that during the development period, the developer may only prohibit  a property owner from installing solar in developments with 50 or...

  13. Oxford Solar | Open Energy Information

    Open Energy Info (EERE)

    Oxford Solar Jump to: navigation, search Name: Oxford Solar Place: Randolph, New Jersey Zip: 7869 Sector: Solar Product: Oxford Solar provides solar energy consulting and...

  14. Akeena Solar | Open Energy Information

    Open Energy Info (EERE)

    Akeena Solar Jump to: navigation, search Logo: Akeena Solar Name: Akeena Solar Address: 16005 Los Gatos Blvd. Place: Los Gatos, California Zip: 95032 Sector: Solar Product: Solar...

  15. Adobe Solar | Open Energy Information

    Open Energy Info (EERE)

    Adobe Solar Jump to: navigation, search Logo: Adobe Solar Name: Adobe Solar Place: Denver, Colorado Region: Rockies Area Sector: Solar Product: solar electric systems Phone Number:...

  16. Climatic Solar | Open Energy Information

    Open Energy Info (EERE)

    Climatic Solar Jump to: navigation, search Logo: Climatic Solar Name: Climatic Solar Address: 650 2nd Lane Place: Vero Beach, Florida Zip: 32962 Sector: Solar Product: solar energy...

  17. Tejas Solares | Open Energy Information

    Open Energy Info (EERE)

    Tejas Solares Jump to: navigation, search Name: Tejas Solares Place: Spain Sector: Solar Product: Tejas Solares is a Spain-based company focused on providing solar solutions for...

  18. SBM Solar | Open Energy Information

    Open Energy Info (EERE)

    search Name: SBM Solar Place: North Carolina Sector: Solar Product: SBM Solar is a solar panel manufacturer based in North Carolina. References: SBM Solar1 This article is...

  19. Quantum wells on 3C-SiC/NH-SiC heterojunctions. Calculation of spontaneous polarization and electric field strength in experiments

    SciTech Connect (OSTI)

    Sbruev, I. S.; Sbruev, S. B.

    2010-10-15

    The results of experiments with quantum wells on 3C-SiC/4H-SiC and 3C-SiC/6H-SiC heterojunctions obtained by various methods are reconsidered. Spontaneous polarizations, field strengths, and energies of local levels in quantum wells on 3C-SiC/NH-SiC heterojunctions were calculated within a unified model. The values obtained are in agreement with the results of all considered experiments. Heterojunction types are determined. Approximations for valence band offsets on heterojunctions between silicon carbide polytypes and the expression for calculating local levels in quantum wells on the 3C-SiC/NH-SiC heterojunction are presented. The spontaneous polarizations and field strengths induced by spontaneous polarization on 3C-SiC/4H-SiC and 3C-SiC/6H-SiC heterojunctions were calculated as 0.71 and 0.47 C/m{sup 2} and 0.825 and 0.55 MV/cm, respectively.

  20. Photocurrent enhancement of perovskite heterojunction by plasmonic nanoparticles and ferroelectric polarization

    SciTech Connect (OSTI)

    Shieh, J. Chen, S. W.; Fang, C. Y.; Chen, C. H.

    2014-02-17

    Perovskite oxidesPb{sub 0.86}La{sub 0.14}TiO{sub 3} (PLT), AgNbO{sub 3} (ANO), and SrTiO{sub 3} (STO)were deposited consecutively on ITO/glass substrates to form layered composite photoelectrodes. These materials were chosen for their specific electronic band structures to form efficient photocatalytic heterojunctions and similar crystalline structures to minimize interface defects. Two additional methods were adopted to increase the photocurrent density of the composites: (1) plasmonic gold nanoparticles were introduced at the PLT/ITO interface to enhance light scattering and absorption while not becoming electron trapping centers and (2) the ferroelectric PLT layer was electrically poled toward the ANO layer to create a favorable band bending for electron transfer.

  1. Thin film heterojunction photovoltaic cells and methods of making the same

    DOE Patents [OSTI]

    Basol, Bulent M.; Tseng, Eric S.; Rod, Robert L.

    1983-06-14

    A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of Class II B of the Periodic Table of Elements and at least tellurium and then heating said film at a temperature between about 250.degree. C. and 500.degree. C. for a time sufficient to convert said film to a suitably low resistivity p-type semiconductor compound. Such film may be deposited initially on the surface of an n-type semiconductor substrate. Alternatively, there may be deposited on the converted film a layer of n-type semiconductor compound different from the film semiconductor compound. The resulting photovoltaic cell exhibits a substantially increased power output over similar cells not subjected to the method of the present invention.

  2. CdS/PbSe heterojunction for high temperature mid-infrared photovoltaic detector applications

    SciTech Connect (OSTI)

    Weng, Binbin E-mail: shi@ou.edu; Qiu, Jijun; Zhao, Lihua; Chang, Caleb; Shi, Zhisheng E-mail: shi@ou.edu

    2014-03-24

    n-CdS/p-PbSe heterojunction is investigated. A thin CdS film is deposited by chemical bath deposition on top of epitaxial PbSe film by molecular beam epitaxy on Silicon. Current-voltage measurements demonstrate very good junction characteristics with rectifying ratio of ∼178 and ideality factor of 1.79 at 300 K. Detectors made with such structure exhibit mid-infrared spectral photoresponse at room temperature. The peak responsivity R{sub λ} and specific detectivity D{sup *} are 0.055 A/W and 5.482 × 10{sup 8} cm·Hz{sup 1/2}/W at λ = 4.7 μm under zero-bias photovoltaic mode. Temperature-dependent photoresponse measurements show abnormal intensity variation below ∼200 K. Possible reasons for this phenomenon are also discussed.

  3. NREL: Solar STAT Blog -

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Outreach Policy Basics Publications Request Assistance Technical Assistance Project Map Solar STAT Blog The Solar STAT blog discusses state and local efforts to develop solar...

  4. Solar Resource Assessment

    Broader source: Energy.gov [DOE]

    DOE solar resource research focuses on understanding historical solar resource patterns and making future predictions, both of which are needed to support reliable power system operation. As solar...

  5. Process Optimization for High Efficiency Heterojunction c-Si Solar Cells Fabrication Using Hot-Wire Chemical Vapor Deposition: Preprint

    SciTech Connect (OSTI)

    Ai, Y.; Yuan, H. C.; Page, M.; Nemeth, W.; Roybal, L.; Wang, Q.

    2012-06-01

    The researchers extensively studied the effects of annealing or thermal history of cell process on the minority carrier lifetimes of FZ n-type c-Si wafers with various i-layer thicknesses from 5 to 60 nm, substrate temperatures from 100 to 350 degrees C, doped layers both p- and n-types, and transparent conducting oxide (TCO).

  6. Intrinsic carrier multiplication efficiency in bulk Si crystals...

    Office of Scientific and Technical Information (OSTI)

    We estimated the carrier multiplication efficiency in the most common solar-cell material, ... of carriers quantitatively, which are crucial for the design of the solar cells. ...

  7. Improving the bulk data transfer experience

    SciTech Connect (OSTI)

    Guok, Chin; Guok, Chin; Lee, Jason R.; Berket, Karlo

    2008-05-07

    Scientific computations and collaborations increasingly rely on the network to provide high-speed data transfer, dissemination of results, access to instruments, support for computational steering, etc. The Energy Sciences Network is establishing a science data network to provide user driven bandwidth allocation. In a shared network environment, some reservations may not be granted due to the lack of available bandwidth on any single path. In many cases, the available bandwidth across multiple paths would be sufficient to grant the reservation. In this paper we investigate how to utilize the available bandwidth across multiple paths in the case of bulk data transfer.

  8. Towards bulk based preconditioning for quantum dotcomputations

    SciTech Connect (OSTI)

    Dongarra, Jack; Langou, Julien; Tomov, Stanimire; Channing,Andrew; Marques, Osni; Vomel, Christof; Wang, Lin-Wang

    2006-05-25

    This article describes how to accelerate the convergence of Preconditioned Conjugate Gradient (PCG) type eigensolvers for the computation of several states around the band gap of colloidal quantum dots. Our new approach uses the Hamiltonian from the bulk materials constituent for the quantum dot to design an efficient preconditioner for the folded spectrum PCG method. The technique described shows promising results when applied to CdSe quantum dot model problems. We show a decrease in the number of iteration steps by at least a factor of 4 compared to the previously used diagonal preconditioner.

  9. Solar resources

    SciTech Connect (OSTI)

    Hulstrom, R.L.

    1989-01-01

    Following the 1973 oil embargo, the US government initiated a program to develop and use solar energy. This led to individual programs devoted to developing various solar radiation energy conversion technologies: photovoltaic and solar-thermal conversion devices. Nearly concurrently, it was recognized that understanding the available insolation resources was required to develop and deploy solar energy devices and systems. It was also recognized that the insolation information available at that time (1973) was not adequate to meet the specific needs of the solar energy community. Federal efforts were initiated and conducted to produce new and more extensive information and data. The primary federal agencies that undertook such efforts were the Department of Energy (DOE) and the National Oceanic and Atmospheric Administration (NOAA). NOAA's efforts included activities performed by the National Weather Service (NWS) and the National Climatic Data Center (NCDC). This book has two man objectives: to report some of the insolation energy data, information, and products produced by the federal efforts and to describe how they were produced. Products include data bases, models and algorithms, monitoring networks, instrumentation, and scientific techniques. The scope of products and results does not include all those produced by past federal efforts. The book's scope and subject matter are oriented to support the intent and purpose of the other volumes in this series. In some cases, other pertinent material is presented to provide a more complete coverage of a given subject. 385 refs., 149 figs., 50 tabs.

  10. Boundary Entropy Can Increase Under Bulk RG Flow (Journal Article...

    Office of Scientific and Technical Information (OSTI)

    Boundary Entropy Can Increase Under Bulk RG Flow Citation Details In-Document Search Title: Boundary Entropy Can Increase Under Bulk RG Flow You are accessing a document from ...

  11. Residential Solar Valuation Rates

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Solar Valuation Rates Karl R. Rbago Rbago Energy LLC 1 The Ideal Residential Solar Tariff Fair to the utility and non-solar customers Fair compensation to the solar ...

  12. Solar Equipment Certification

    Broader source: Energy.gov [DOE]

    Under the Solar Energy Standards Act of 1976, the Florida Solar Energy Center (FSEC) is responsible for certifying all solar equipment sold in Florida. A manufacturer who wishes to have their solar...

  13. Designing of spin-filtering devices in zigzag graphene nanoribbons heterojunctions by asymmetric hydrogenation and B-N doping

    SciTech Connect (OSTI)

    Zhang, Dan; Zhang, Xiaojiao; Ouyang, Fangping; Li, Mingjun; Xu, Hui; Long, Mengqiu

    2015-01-07

    Using nonequilibrium Green's function in combination with the spin-polarized density functional theory, the spin-dependent transport properties of boron and nitrogen doped zigzag graphene nanoribbons (ZGNRs) heterojunctions with single or double edge-saturated hydrogen have been investigated. Our results show that the perfect spin-filtering effect (100%), rectifying behavior and negative differential resistance can be realized in the ZGNRs-based systems. And the corresponding physical analysis has been given.

  14. Solar ADEPT: Efficient Solar Energy Systems

    SciTech Connect (OSTI)

    2011-01-01

    Solar ADEPT Project: The 7 projects that make up ARPA-E's Solar ADEPT program, short for 'Solar Agile Delivery of Electrical Power Technology,' aim to improve the performance of photovoltaic (PV) solar energy systems, which convert the sun's rays into electricity. Solar ADEPT projects are integrating advanced electrical components into PV systems to make the process of converting solar energy to electricity more efficient.

  15. MoS{sub 2}@ZnO nano-heterojunctions with enhanced photocatalysis and field emission properties

    SciTech Connect (OSTI)

    Tan, Ying-Hua; Yu, Ke Li, Jin-Zhu; Fu, Hao; Zhu, Zi-Qiang

    2014-08-14

    The molybdenum disulfide (MoS{sub 2})@ZnO nano-heterojunctions were successfully fabricated through a facile three-step synthetic process: prefabrication of the ZnO nanoparticles, the synthesis of MoS{sub 2} nanoflowers, and the fabrication of MoS{sub 2}@ZnO heterojunctions, in which ZnO nanoparticles were uniformly self-assembled on the MoS{sub 2} nanoflowers by utilizing polyethyleneimine as a binding agent. The photocatalytic activities of the composite samples were evaluated by monitoring the photodegradation of methylene blue (MB). Compared with pure MoS{sub 2} nanoflowers, the composites show higher adsorption capability in dark and better photocatalytic efficiency due to the increased specific surface area and improved electron-hole pair separation. After irradiation for 100?min, the remaining MB in solution is about 7.3%. Moreover, the MoS{sub 2}@ZnO heterojunctions possess enhanced field emission properties with lower turn-on field of 3.08?V ?m{sup ?1}and lower threshold field of 6.9?V ?m{sup ?1} relative to pure MoS{sub 2} with turn-on field of 3.65?V ?m{sup ?1} and threshold field of 9.03?V ?m{sup ?1}.

  16. Concentrating Solar Power

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power ... Sciences Applications National Solar Thermal Test Facility Nuclear Energy ...

  17. Concentrating Solar Power

    SciTech Connect (OSTI)

    Not Available

    2008-09-01

    Summarizes the goals and activities of the DOE Solar Energy Technologies Program efforts within its concentrating solar power subprogram.

  18. VISUAL-SOLAR

    Energy Science and Technology Software Center (OSTI)

    003661IBMPC00 Visual-SOLAR: Modeling and Visualization of Solar Radiation Potential on Individual Building Rooftops

  19. Solar Easements & Local Option Solar Rights Laws

    Broader source: Energy.gov [DOE]

    Utah's solar easement provision is similar to easement provisions in many other states. Parties may voluntarily enter into written solar easement contracts that are enforceable by law. An...

  20. Solar Energy Technologies Program: Concentrating Solar Power

    SciTech Connect (OSTI)

    2009-10-26

    Fact sheet summarizing the goals and activities of the DOE Solar Energy Technologies Program efforts within its concentrating solar power subprogram.

  1. AV Solar Ranch I Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    AV Solar Ranch I Solar Power Plant Jump to: navigation, search Name AV Solar Ranch I Solar Power Plant Facility AV Solar Ranch I Sector Solar Facility Type Photovoltaic Developer...

  2. DEVELOPMENT OF THE BULK TRITIUM SHIPPING PACKAGING

    SciTech Connect (OSTI)

    Blanton, P.; Eberl, K.

    2008-09-14

    A new radioactive shipping packaging for transporting bulk quantities of tritium, the Bulk Tritium Shipping Package (BTSP), has been designed for the Department of Energy (DOE) as a replacement for a package designed in the early 1970s. This paper summarizes significant design features and describes how the design satisfies the regulatory safety requirements of the Code of Federal Regulations and the International Atomic Energy Agency. The BTSP design incorporates many improvements over its predecessor by implementing improved testing, handling, and maintenance capabilities, while improving manufacturability and incorporating new engineered materials. This paper also discusses the results from testing of the BTSP to 10 CFR 71 Normal Conditions of Transport and Hypothetical Accident Condition events. The programmatic need of the Department of Energy (DOE) to ship bulk quantities of tritium has been satisfied since the late 1970s by the UC-609 shipping package. The current Certificate of Conformance for the UC-609, USA/9932/B(U) (DOE), will expire in late 2011. Since the UC-609 was not designed to meet current regulatory requirements, it will not be recertified and thereby necessitates a replacement Type B shipping package for continued DOE tritium shipments in the future. A replacement tritium packaging called the Bulk Tritium Shipping Package (BTSP) is currently being designed and tested by Savannah River National Laboratory (SRNL). The BTSP consists of two primary assemblies, an outer Drum Assembly and an inner Containment Vessel Assembly (CV), both designed to mitigate damage and to protect the tritium contents from leaking during the regulatory Hypothetical Accident Condition (HAC) events and during Normal Conditions of Transport (NCT). During transport, the CV rests on a silicone pad within the Drum Liner and is covered with a thermal insulating disk within the insulated Drum Assembly. The BTSP packaging weighs approximately 500 lbs without contents and is 50-1/2 inches high by 24-1/2 inches in outside diameter. With contents the gross weight of the BTSP is 650 lbs. The BTSP is designed for the safe shipment of 150 grams of tritium in a solid or gaseous state. To comply with the federal regulations that govern Type B shipping packages, the BTSP is designed so that it will not lose tritium at a rate greater than the limits stated in 10CFR 71.51 of 10{sup -6} A2 per hour for the 'Normal Conditions of Transport' (NCT) and an A2 in 1 week under 'Hypothetical Accident Conditions' (HAC). Additionally, since the BTSP design incorporates a valve as part of the tritium containment boundary, secondary containment features are incorporated in the CV Lid to protect against gas leakage past the valve as required by 10CFR71.43(e). This secondary containment boundary is designed to provide the same level of containment as the primary containment boundary when subjected to the HAC and NCT criteria.

  3. DEPLOYMENT OF THE BULK TRITIUM SHIPPING PACKAGE

    SciTech Connect (OSTI)

    Blanton, P.

    2013-10-10

    A new Bulk Tritium Shipping Package (BTSP) was designed by the Savannah River National Laboratory to be a replacement for a package that has been used to ship tritium in a variety of content configurations and forms since the early 1970s. The BTSP was certified by the National Nuclear Safety Administration in 2011 for shipments of up to 150 grams of Tritium. Thirty packages were procured and are being delivered to various DOE sites for operational use. This paper summarizes the design features of the BTSP, as well as associated engineered material improvements. Fabrication challenges encountered during production are discussed as well as fielding requirements. Current approved tritium content forms (gas and tritium hydrides), are reviewed, as well as, a new content, tritium contaminated water on molecular sieves. Issues associated with gas generation will also be discussed.

  4. Rotary adsorbers for continuous bulk separations

    DOE Patents [OSTI]

    Baker, Frederick S.

    2011-11-08

    A rotary adsorber for continuous bulk separations is disclosed. The rotary adsorber includes an adsorption zone in fluid communication with an influent adsorption fluid stream, and a desorption zone in fluid communication with a desorption fluid stream. The fluid streams may be gas streams or liquid streams. The rotary adsorber includes one or more adsorption blocks including adsorbent structure(s). The adsorbent structure adsorbs the target species that is to be separated from the influent fluid stream. The apparatus includes a rotary wheel for moving each adsorption block through the adsorption zone and the desorption zone. A desorption circuit passes an electrical current through the adsorbent structure in the desorption zone to desorb the species from the adsorbent structure. The adsorbent structure may include porous activated carbon fibers aligned with their longitudinal axis essentially parallel to the flow direction of the desorption fluid stream. The adsorbent structure may be an inherently electrically-conductive honeycomb structure.

  5. Bulk amorphous steels based on Fe alloys

    DOE Patents [OSTI]

    Lu, ZhaoPing; Liu, Chain T.

    2006-05-30

    A bulk amorphous alloy has the approximate composition: Fe.sub.(100-a-b-c-d-e)Y.sub.aMn.sub.bT.sub.cM.sub.dX.sub.e wherein: T includes at least one of the group consisting of: Ni, Cu, Cr and Co; M includes at least one of the group consisting of W, Mo, Nb, Ta, Al and Ti; X includes at least one of the group consisting of Co, Ni and Cr; a is an atomic percentage, and a<5; b is an atomic percentage, and b.ltoreq.25; c is an atomic percentage, and c.ltoreq.25; d is an atomic percentage, and d.ltoreq.25; and e is an atomic percentage, and 5.ltoreq.e.ltoreq.30.

  6. Amorphous/crystalline silicon interface passivation: Ambient-temperature dependence and implications for solar cell performance

    SciTech Connect (OSTI)

    Seif, Johannes P.; Krishnamani, Gopal; Demaurex, Benedicte; Ballif, Christophe; Wolf, Stefaan De

    2015-03-02

    Silicon heterojunction (SHJ) solar cells feature amorphous silicon passivation films, which enable very high voltages. We report how such passivation increases with operating temperature for amorphous silicon stacks involving doped layers and decreases for intrinsic-layer-only passivation. We discuss the implications of this phenomenon on the solar cell's temperature coefficient, which represents an important figure-of-merit for the energy yield of devices deployed in the field. We show evidence that both open-circuit voltage (Voc) and fill factor (FF) are affected by these variations in passivation and quantify these temperature-mediated effects, compared with those expected from standard diode equations. We confirm that devices with high Voc values at 25C show better high-temperature performance. Thus, we also argue that the precise device architecture, such as the presence of charge-transport barriers, may affect the temperature-dependent device performance as well.

  7. Amorphous/crystalline silicon interface passivation: Ambient-temperature dependence and implications for solar cell performance

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Seif, Johannes P.; Krishnamani, Gopal; Demaurex, Benedicte; Ballif, Christophe; Wolf, Stefaan De

    2015-03-02

    Silicon heterojunction (SHJ) solar cells feature amorphous silicon passivation films, which enable very high voltages. We report how such passivation increases with operating temperature for amorphous silicon stacks involving doped layers and decreases for intrinsic-layer-only passivation. We discuss the implications of this phenomenon on the solar cell's temperature coefficient, which represents an important figure-of-merit for the energy yield of devices deployed in the field. We show evidence that both open-circuit voltage (Voc) and fill factor (FF) are affected by these variations in passivation and quantify these temperature-mediated effects, compared with those expected from standard diode equations. We confirm that devicesmore » with high Voc values at 25°C show better high-temperature performance. Thus, we also argue that the precise device architecture, such as the presence of charge-transport barriers, may affect the temperature-dependent device performance as well.« less

  8. More stable hybrid organic solar cells deposited on amorphous Si electron transfer layer

    SciTech Connect (OSTI)

    Samiee, Mehran; Modtland, Brian; Dalal, Vikram L.; Aidarkhanov, Damir

    2014-05-26

    We report on defect densities, performance, and stability of organic/inorganic hybrid solar cells produced using n-doped inorganic amorphous silicon-carbide layers as the electron transport layer (ETL). The organic material was poly-3-hexyl-thiophene (P3HT) and heterojunction was formed using phenyl-C{sub 71}-Butyric-Acid-Methyl Ester (PCBM). For comparison, inverted solar cells fabricated using Cs{sub 2}CO{sub 3} as ETL were fabricated. Defect densities and subgap quantum efficiency curves were found to be nearly identical for both types of cells. The cells were subjected to 2xsun illumination and it was found that the cells produced using doped a-Si as ETL were much more stable than the cells produced using Cs{sub 2}CO{sub 3}.

  9. Amorphous/crystalline silicon interface passivation: Ambient-temperature dependence and implications for solar cell performance

    SciTech Connect (OSTI)

    Seif, Johannes P.; Krishnamani, Gopal; Demaurex, Benedicte; Ballif, Christophe; Wolf, Stefaan De

    2015-03-02

    Silicon heterojunction (SHJ) solar cells feature amorphous silicon passivation films, which enable very high voltages. We report how such passivation increases with operating temperature for amorphous silicon stacks involving doped layers and decreases for intrinsic-layer-only passivation. We discuss the implications of this phenomenon on the solar cell's temperature coefficient, which represents an important figure-of-merit for the energy yield of devices deployed in the field. We show evidence that both open-circuit voltage (Voc) and fill factor (FF) are affected by these variations in passivation and quantify these temperature-mediated effects, compared with those expected from standard diode equations. We confirm that devices with high Voc values at 25°C show better high-temperature performance. Thus, we also argue that the precise device architecture, such as the presence of charge-transport barriers, may affect the temperature-dependent device performance as well.

  10. Solar Impulse's Solar-Powered Plane

    SciTech Connect (OSTI)

    Moniz, Ernest; Piccard, Bertrand; Reicher, Dan

    2013-07-08

    Solar Impulse lands in Washington, DC at Washington Dulles International Airport as part of its journey across the United States. Secretary Ernest Moniz speaks about how advancements like those at the Department of Energy are leading the way for innovations like the solar-powered plane. Footage of the solar-powered plane courtesy of Solar Impulse.

  11. Solar Impulse's Solar-Powered Plane

    ScienceCinema (OSTI)

    Moniz, Ernest; Piccard, Bertrand; Reicher, Dan

    2014-01-07

    Solar Impulse lands in Washington, DC at Washington Dulles International Airport as part of its journey across the United States. Secretary Ernest Moniz speaks about how advancements like those at the Department of Energy are leading the way for innovations like the solar-powered plane. Footage of the solar-powered plane courtesy of Solar Impulse.

  12. San Francisco, California: Solar in Action (Brochure), Solar...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Francisco, California: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) San Francisco, California: Solar in Action (Brochure), Solar ...

  13. Space Coast Next Generation Solar Energy Center Solar Power Plant...

    Open Energy Info (EERE)

    Coast Next Generation Solar Energy Center Solar Power Plant Jump to: navigation, search Name Space Coast Next Generation Solar Energy Center Solar Power Plant Facility Space Coast...

  14. Martin Next Generation Solar Energy Center Solar Power Plant...

    Open Energy Info (EERE)

    Next Generation Solar Energy Center Solar Power Plant Jump to: navigation, search Name Martin Next Generation Solar Energy Center Solar Power Plant Facility Martin Next Generation...

  15. Seattle, Washington: Solar in Action (Brochure), Solar America...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Seattle, Washington: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Seattle, Washington: Solar in Action (Brochure), Solar America ...

  16. Houston, Texas: Solar in Action (Brochure), Solar America Cities...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Houston, Texas: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Houston, Texas: Solar in Action (Brochure), Solar America Cities, ...

  17. San Antonio, Texas: Solar in Action (Brochure), Solar America...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Antonio, Texas: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) San Antonio, Texas: Solar in Action (Brochure), Solar America Cities, ...

  18. EE Solar Energy Efficiency Solar | Open Energy Information

    Open Energy Info (EERE)

    EE Solar Energy Efficiency Solar Jump to: navigation, search Name: EE Solar (Energy Efficiency Solar) Place: Ponoma, California Zip: 91768 Product: PV systems installer based in...

  19. Willard Kelsey Solar Group WK Solar | Open Energy Information

    Open Energy Info (EERE)

    Willard Kelsey Solar Group WK Solar Jump to: navigation, search Name: Willard & Kelsey Solar Group (WK Solar) Place: Perrysburg, Ohio Zip: 43551 Product: Manufacturer of CdTe...

  20. Innotech Solar AS formerly known as Solar Cell Repower | Open...

    Open Energy Info (EERE)

    Innotech Solar AS formerly known as Solar Cell Repower Jump to: navigation, search Name: Innotech Solar AS (formerly known as Solar Cell Repower) Place: Narvik, Norway Zip: 8512...

  1. Wuxi Jiacheng Solar Energy Technology Co JC Solar | Open Energy...

    Open Energy Info (EERE)

    JC Solar Jump to: navigation, search Name: Wuxi Jiacheng Solar Energy Technology Co (JC Solar) Place: Yixing, Jiangsu Province, China Zip: 214200 Sector: Solar Product: A Chinese...

  2. Innovative Systems Engineering Solar LLC ISE Solar LLC | Open...

    Open Energy Info (EERE)

    Systems Engineering Solar LLC ISE Solar LLC Jump to: navigation, search Name: Innovative Systems Engineering Solar LLC (ISE Solar LLC) Place: Warminster, Pennsylvania Zip:...

  3. First Solar Electric LLC formerly DT Solar | Open Energy Information

    Open Energy Info (EERE)

    Electric LLC formerly DT Solar Jump to: navigation, search Name: First Solar Electric LLC (formerly DT Solar) Place: Branchburg, New Jersey Zip: 8876 Sector: Solar Product: PV...

  4. Aide Solar Jiangsu Aide Solar Energy Technology Co Ltd | Open...

    Open Energy Info (EERE)

    Aide Solar Jiangsu Aide Solar Energy Technology Co Ltd Jump to: navigation, search Name: Aide Solar (Jiangsu Aide Solar Energy Technology Co Ltd) Place: Xuzhou, Jiangsu Province,...

  5. AET Solar formerly solar division of GGAM Electrical Services...

    Open Energy Info (EERE)

    Solar formerly solar division of GGAM Electrical Services Jump to: navigation, search Name: AET Solar (formerly solar division of GGAM Electrical Services) Place: Limassol, Cyprus...

  6. Creative Energy Solar Investments SA formerly Hellenic Solar...

    Open Energy Info (EERE)

    Solar Investments SA formerly Hellenic Solar Jump to: navigation, search Name: Creative Energy Solar Investments SA (formerly Hellenic Solar) Place: 18538 Piraeus, Greece Product:...

  7. China Glass Solar aka CG Solar formerly Weihai Bluestar Terra...

    Open Energy Info (EERE)

    Glass Solar aka CG Solar formerly Weihai Bluestar Terra Photovoltaic Co Ltd Jump to: navigation, search Name: China Glass Solar (aka CG Solar, formerly Weihai Bluestar Terra...

  8. Siemens Solar formerly ARCO Solar Corporation | Open Energy Informatio...

    Open Energy Info (EERE)

    Solar formerly ARCO Solar Corporation Jump to: navigation, search Name: Siemens Solar (formerly ARCO Solar Corporation) Place: Arizona Product: Built a 6MW CPV project in 1984,...

  9. Siemens Concentrated Solar Power Ltd previously Solel Solar Systems...

    Open Energy Info (EERE)

    Siemens Concentrated Solar Power Ltd previously Solel Solar Systems Jump to: navigation, search Name: Siemens Concentrated Solar Power Ltd (previously Solel Solar Systems) Place:...

  10. Guodian Jintech Solar Energy formerly Yixing Jintech Solar Energy...

    Open Energy Info (EERE)

    Jintech Solar Energy formerly Yixing Jintech Solar Energy Co Ltd Jump to: navigation, search Name: Guodian Jintech Solar Energy (formerly Yixing Jintech Solar Energy Co Ltd) Place:...

  11. Shanghai Comtec Solar Technology Ltd aka Comtec Solar System...

    Open Energy Info (EERE)

    Comtec Solar Technology Ltd aka Comtec Solar System Group Ltd Jump to: navigation, search Name: Shanghai Comtec Solar Technology Ltd (aka Comtec Solar System Group Ltd) Place:...

  12. Ecosystem Solar Electric Corp aka Solar MW Energy Inc | Open...

    Open Energy Info (EERE)

    Solar Electric Corp aka Solar MW Energy Inc Jump to: navigation, search Name: Ecosystem Solar Electric Corp, aka Solar MW Energy Inc Place: Ontario, California Zip: 91761 Product:...

  13. ET Solar Group Formerly CNS Solar Industry | Open Energy Information

    Open Energy Info (EERE)

    Solar Group Formerly CNS Solar Industry Jump to: navigation, search Name: ET Solar Group (Formerly CNS Solar Industry) Place: Nanjing, Jiangsu Province, China Zip: 210009 Sector:...

  14. Entech Solar Inc formerly WorldWater Solar Technologies | Open...

    Open Energy Info (EERE)

    Solar Inc formerly WorldWater Solar Technologies Jump to: navigation, search Name: Entech Solar Inc. (formerly WorldWater & Solar Technologies) Place: Fort Worth, Texas Zip: 76177...

  15. EIS-0449: Solar Millennium Blythe Solar Power Project in Riverside...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    9: Solar Millennium Blythe Solar Power Project in Riverside County, CA EIS-0449: Solar Millennium Blythe Solar Power Project in Riverside County, CA December 10, 2010 EIS-0449: ...

  16. EA-1683: Abengoa Solar's Solana Concentrating Solar Power Facility...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    83: Abengoa Solar's Solana Concentrating Solar Power Facility, Gila Bend, AZ EA-1683: Abengoa Solar's Solana Concentrating Solar Power Facility, Gila Bend, AZ May 3, 2010 EA-1683: ...

  17. Orlando, Florida: Solar in Action (Brochure), Solar America Cities...

    Office of Environmental Management (EM)

    Orlando, Florida: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Orlando, Florida: Solar in Action (Brochure), Solar America Cities,...

  18. Denver, Colorado: Solar in Action (Brochure), Solar America Cities...

    Office of Environmental Management (EM)

    Denver, Colorado: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Denver, Colorado: Solar in Action (Brochure), Solar America Cities,...

  19. EA-1798: Abengoa Solar's Mojave Solar Project near Barstow, CA...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    8: Abengoa Solar's Mojave Solar Project near Barstow, CA EA-1798: Abengoa Solar's Mojave Solar Project near Barstow, CA July 1, 2011 EA-1798: Final Environmental Assessment Loan ...

  20. Kings River Conservation District (KRCD) Solar Farm Solar Power...

    Open Energy Info (EERE)

    River Conservation District (KRCD) Solar Farm Solar Power Plant Jump to: navigation, search Name Kings River Conservation District (KRCD) Solar Farm Solar Power Plant Facility...

  1. edition Not Available 14 SOLAR ENERGY; SOLAR ENERGY; EDUCATIONAL...

    Office of Scientific and Technical Information (OSTI)

    Home economics: student activities. Field test edition Not Available 14 SOLAR ENERGY; SOLAR ENERGY; EDUCATIONAL TOOLS; CURRICULUM GUIDES; GLAZING; HOUSES; SOLAR COOKERS; SOLAR...

  2. Concentrating Solar Power Projects | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects Concentrating Solar Power Projects

  3. Solar collector

    SciTech Connect (OSTI)

    Wilhelm, W.G.

    1982-05-04

    The field of this invention is solar collectors, and more particularly, the invention pertains to a flat plate collector that employs high performance thin films. The solar collector of this invention overcomes several problems in this field, such as excessive hardware, cost and reliability, and other prior art drawbacks outlined in the specification. In the preferred form, the apparatus features a substantially rigid planar frame. A thin film window is bonded to one planar side of the frame. An absorber of laminate construction is comprised of two thin film layers that are sealed perimetrically. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. Absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  4. Solar PST | Open Energy Information

    Open Energy Info (EERE)

    search Name: Solar PST Place: Bergondo, Spain Zip: 15 165 Sector: Solar Product: Spanish company producing thermodynamic solar panels. References: Solar PST1 This article...

  5. Immodo Solar | Open Energy Information

    Open Energy Info (EERE)

    Jump to: navigation, search Name: Immodo Solar Place: Spain Sector: Solar Product: Spanish company which installs and maintains solar panels. References: Immodo Solar1 This...

  6. Shell Solar | Open Energy Information

    Open Energy Info (EERE)

    Solar Jump to: navigation, search Name: Shell Solar Place: The Hague, Netherlands Zip: 2501 AN Sector: Solar Product: Shell Solar is developing non-crystalline PV technology,...

  7. Preussen Solar | Open Energy Information

    Open Energy Info (EERE)

    Preussen Solar Jump to: navigation, search Name: Preussen Solar Place: Berlin, Germany Zip: 10711 Sector: Solar Product: Involved in solar projects. Coordinates: 52.516074,...

  8. Genesis Solar | Open Energy Information

    Open Energy Info (EERE)

    Genesis Solar Facility Genesis Solar Sector Solar Facility Type Concentrating solar power Facility Status Under Construction Owner NextEra Developer NextEra Location Blythe,...

  9. Solar Energy | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Resource Library Solar Energy Solar Energy Below are resources for Tribes on solar energy technologies. A Guide to Community Solar: Utility, Private, and Nonprofit ...

  10. Declination Solar | Open Energy Information

    Open Energy Info (EERE)

    San Francisco, California Sector: Solar Product: San Francisco solar installation firm acquired by SolarCity in September 2006. References: Declination Solar1 This article...

  11. AS Solar | Open Energy Information

    Open Energy Info (EERE)

    Solar Jump to: navigation, search Name: AS Solar Address: Am Tnniesberg 4A Place: Hannover, Germany Sector: Solar Product: PV, solar thermal Phone Number: +49 511 475578 - 0...

  12. Abengoa Solar | Open Energy Information

    Open Energy Info (EERE)

    Solar Jump to: navigation, search Logo: Abengoa Solar Name: Abengoa Solar Address: 11500 W 13th Ave Place: Lakewood, Colorado Zip: 80215 Region: Rockies Area Sector: Solar Product:...

  13. First Solar | Open Energy Information

    Open Energy Info (EERE)

    First Solar Name: First Solar Address: 350 West Washington Street, Suite 600 Place: Tempe, Arizona Zip: 85281 Sector: Solar Product: Solar energy systems Year Founded: 1999 Phone...

  14. Solar Systems | Open Energy Information

    Open Energy Info (EERE)

    Logo: Solar Systems Name: Solar Systems Address: 45 Grosvenor Street Place: Abbotsford, Australia Sector: Solar Product: Solar concentrators Phone Number: +61 3 9413 8000 Website:...

  15. Ascent Solar | Open Energy Information

    Open Energy Info (EERE)

    Solar Jump to: navigation, search Logo: Ascent Solar Name: Ascent Solar Address: 12300 Grant Street Place: Thornton, Colorado Zip: 80241 Region: Rockies Area Sector: Solar Product:...

  16. Borrego Solar | Open Energy Information

    Open Energy Info (EERE)

    Borrego Solar Jump to: navigation, search Logo: Borrego Solar Name: Borrego Solar Address: 2560 9th Street Place: Berkeley, California Zip: 94710 Region: Bay Area Sector: Solar...

  17. DPW Solar | Open Energy Information

    Open Energy Info (EERE)

    DPW Solar Jump to: navigation, search Logo: DPW Solar Name: DPW Solar Address: 4000 B Vassar Dr. NE Place: Albuquerque, New Mexico Zip: 87107 Sector: Solar Product: Renewable...

  18. Inovateus Solar | Open Energy Information

    Open Energy Info (EERE)

    Inovateus Solar Jump to: navigation, search Logo: Inovateus Solar Name: Inovateus Solar Address: 19890 State Line Rd. Place: South Bend, Indiana Zip: 46637 Sector: Solar Product:...

  19. Standard Solar | Open Energy Information

    Open Energy Info (EERE)

    Standard Solar Name: Standard Solar Address: 202 Perry Parkway Place: Gaithersburg, Maryland Zip: 20877 Region: Northeast - NY NJ CT PA Area Sector: Solar Product: Solar...

  20. Wasatch Solar | Open Energy Information

    Open Energy Info (EERE)

    Solar Jump to: navigation, search Name: Wasatch Solar Address: 4417 S 2950 E Place: Salt Lake City, Utah Zip: 84124 Sector: Solar Product: Solar Year Founded: 2009 Phone...

  1. Scaled Solar | Open Energy Information

    Open Energy Info (EERE)

    Solar Product: Scaled Solar manufacturers and markets utility-grade, concentrated photovoltaic solar energy systems to commercial customers References: Scaled Solar1 This...

  2. Corona Solar | Open Energy Information

    Open Energy Info (EERE)

    Solar Jump to: navigation, search Name: Corona Solar Place: Tholey-Theley, Germany Zip: D 66636 Sector: Solar Product: Engaged in solar passive large-size collectors. References:...

  3. Sylcom Solar | Open Energy Information

    Open Energy Info (EERE)

    Sylcom Solar provides the design, research, distribution, construction, operation, maintenance of products and of Photovoltaic Solar, Thermal Solar and Solar Thermoelectric...

  4. Apex Solar | Open Energy Information

    Open Energy Info (EERE)

    Name: Apex Solar Place: Sofia, Bulgaria Zip: 1616 Sector: Solar Product: Bulgarian PV and solar thermal project developer and installer. References: Apex Solar1 This article is a...

  5. Atlantic Solar | Open Energy Information

    Open Energy Info (EERE)

    navigation, search Logo: Atlantic Solar Name: Atlantic Solar Place: Cape Town, South Africa Sector: Solar Product: Solar Thermal Technology Year Founded: 1985 Phone Number:...

  6. Solar Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Fuel Cycle Defense Waste Management Programs Advanced Nuclear Energy

  7. Hetero-junction photovoltaic device and method of fabricating the device

    DOE Patents [OSTI]

    Aytug, Tolga; Christen, David K; Paranthaman, Mariappan Parans; Polat, Ozgur

    2014-02-10

    A hetero-junction device and fabrication method in which phase-separated n-type and p-type semiconductor pillars define vertically-oriented p-n junctions extending above a substrate. Semiconductor materials are selected for the p-type and n-type pillars that are thermodynamically stable and substantially insoluble in one another. An epitaxial deposition process is employed to form the pillars on a nucleation layer and the mutual insolubility drives phase separation of the materials. During the epitaxial deposition process, the orientation is such that the nucleation layer initiates propagation of vertical columns resulting in a substantially ordered, three-dimensional structure throughout the deposited material. An oxidation state of at least a portion of one of the p-type or the n-type semiconductor materials is altered relative to the other, such that the band-gap energy of the semiconductor materials differ with respect to stoichiometric compositions and the device preferentially absorbs particular selected bands of radiation.

  8. Asymmetric Electron Transport at Monolayer-Bilayer Heterojunctions of Epitaxial Graphene

    SciTech Connect (OSTI)

    Li, An-Ping [ORNL] [ORNL; Clark, Kendal W [ORNL] [ORNL; Zhang, Xiaoguang [ORNL] [ORNL; Gu, Gong [University of Tennessee, Knoxville (UTK)] [University of Tennessee, Knoxville (UTK); He, Guowei [Carnegie Mellon University (CMU)] [Carnegie Mellon University (CMU); Feenstra, Randall [Carnegie Mellon University (CMU)] [Carnegie Mellon University (CMU)

    2014-01-01

    The symmetry of the graphene honeycomb lattice is a key element determining many of graphene s unique electronic properties, such as the linear energy-momentum dispersion and the suppressed backscattering 1,2. However, line defects in large-scale epitaxial graphene films, such as grain boundaries, edges, surface steps, and changes in layer thickness, often break the sublatttice symmetry and can impact transport properties of graphene profoundly 3-6. Here we report asymmetric electron transport upon polarity reversal at individual monolayer-bilayer (ML-BL) boundaries in epitaxial graphene on SiC (0001), revealed by scanning tunneling potentiometry. A greater voltage drop is observed when the current flows from BL to ML graphene than in the reverse direction, and the difference remains nearly unchanged with increasing current. This is not a typical nonlinear conductance due to electron transmission through an asymmetric potential. Rather, it indicates the opening of a dynamic energy gap at the Fermi energy due to the Coulomb interaction between the injected nonequilibrium electron density and the pseudospin polarized Friedel oscillation charge density at the boundary. This intriguing heterojunction transport behavior opens a new avenue towards novel quantum functions such as quantum switching.

  9. Electroluminescence from ZnO/Si heterojunctions fabricated by PLD with bias voltage application

    SciTech Connect (OSTI)

    Seno, Yuuki; Konno, Daisuke; Komiyama, Takao; Chonan, Yasunori; Yamaguchi, Hiroyuki; Aoyama, Takashi

    2014-02-21

    Electroluminescence (EL) for ZnO films has been investigated by fabricating n-ZnO/p-Si heterojunctions and changing the VI/II (O/Zn) ratio of the films. In the photoluminescence (PL) spectra, both the near band edge (NBE) emission and the defect-related emission were observed, while in the EL spectra only defect-related emission was observed. The EL spectra were divided into three components: green (550 nm), yellow (618 nm) and red (700 nm) bands; and their intensities were compared. As the VI/II (O/Zn) ratio was increased, the red band emission intensity decreased and the green band emission intensity increased. This implies that the oxygen and the zinc vacancies are related to the red and the green band emissions, respectively. Electron transitions from the conduction band minimum (Ec) to the deep energy levels of these vacancies are suggested to cause the red and the green luminescences while the energy levels of the Zn interstitials are close to the Ec in the band gap and no NBE emission is observed.

  10. Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors

    SciTech Connect (OSTI)

    Rajamohanan, Bijesh Mohata, Dheeraj; Hollander, Matthew; Datta, Suman; Zhu, Yan; Hudait, Mantu; Jiang, Zhengping; Klimeck, Gerhard

    2014-01-28

    In this paper, we demonstrate InAs/GaSb hetero-junction (hetJ) and GaSb homo-junction (homJ) p-channel tunneling field effect transistors (pTFET) employing a low temperature atomic layer deposited high-κ gate dielectric. HetJ pTFET exhibited drive current of 35 μA/μm in comparison to homJ pTFET, which exhibited drive current of 0.3 μA/μm at V{sub DS} = −0.5 V under DC biasing conditions. Additionally, with pulsing of 1 μs gate voltage, hetJ pTFET exhibited enhanced drive current of 85 μA/μm at V{sub DS} = −0.5 V, which is the highest reported in the category of III-V pTFET. Detailed device characterization was performed through analysis of the capacitance-voltage characteristics, pulsed current-voltage characteristics, and x-ray diffraction studies.

  11. Solar Contractor Licensing | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    < Back Eligibility InstallersContractors Savings Category Solar - Passive Solar Water Heat Solar Space Heat Solar Thermal Electric Solar Thermal Process Heat Solar Photovoltaics...

  12. Measurement of the valence band-offset in a PbSe/ZnO heterojunction by x-ray photoelectron spectroscopy

    SciTech Connect (OSTI)

    Li Lin; Qiu Jijun; Weng Binbin; Yuan Zijian; Shi Zhisheng; Li Xiaomin; Gan Xiaoyan; Sellers, Ian R.

    2012-12-24

    A heterojunction of PbSe/ZnO has been grown by molecular beam epitaxy. X-ray photoelectron spectroscopy was used to directly measure the valence-band offset (VBO) of the heterojunction. The VBO, {Delta}E{sub V}, was determined as 2.51 {+-} 0.05 eV using the Pb 4p{sup 3/2} and Zn 2p{sup 3/2} core levels as a reference. The conduction-band offset, {Delta}E{sub C}, was, therefore, determined to be 0.59 {+-} 0.05 eV based on the above {Delta}E{sub V} value. This analysis indicates that the PbSe/ZnO heterojunction forms a type I (Straddling Gap) heterostructure.

  13. Determination of Bulk Dimensional Variation in Castings

    SciTech Connect (OSTI)

    Dr. James F. Cuttino Dr. Edward P. Morse

    2005-04-14

    The purpose of this work is to improve the efficiency of green sand foundries so that they may continue to compete as the most cost-effective method of fabrication while meeting tightening constraints on near-net shape manufacturing. In order to achieve this objective, the study is divided into two major components. The first component concentrated on identifying which processes control surface finish on the castings and which provide potential reductions in variations. The second component identified metrological methods that effectively discern between the geometry of bulk material versus surface finish in order to more accurately determine the quality of a part. The research resulted in the determination of an empirical relationship relating pouring parameters to dimensional variation, with an R2 value of greater than 0.79. A significant difference in variations obtained from vertical vs. horizontal molding machines was also noticed. When analyzed separately, however, the resulting empirical relationships for horizontal and vertical machines had reduced R2 values, probably due to the reduced data sets. Significant parameters when considering vertical and horizontal molding machines together included surface roughness, pattern type, iron type, pouring rate, copper content, amount of Western Bentonite, and permeability.

  14. Excitonic exchange splitting in bulk semiconductors

    SciTech Connect (OSTI)

    Fu, H.; Wang, L.; Zunger, A.

    1999-02-01

    We present an approach to calculate the excitonic fine-structure splittings due to electron-hole short-range exchange interactions using the local-density approximation pseudopotential method, and apply it to bulk semiconductors CdSe, InP, GaAs, and InAs. Comparing with previous theoretical results, the current calculated splittings agree well with experiments. Furthermore, we provide an approximate relationship between the short-range exchange splitting and the exciton Bohr radius, which can be used to estimate the exchange splitting for other materials. The current calculation indicates that a commonly used formula for exchange splitting in quantum dot is not valid. Finally, we find a very large pressure dependence of the exchange splitting: a factor of 4.5 increase as the lattice constant changes by 3.5{percent}. This increase is mainly due to the decrease of the Bohr radius via the change of electron effective mass. {copyright} {ital 1999} {ital The American Physical Society}

  15. Thermodynamic properties of bulk and confined water

    SciTech Connect (OSTI)

    Mallamace, Francesco; Corsaro, Carmelo; Mallamace, Domenico; Vasi, Sebastiano; Vasi, Cirino; Stanley, H. Eugene

    2014-11-14

    The thermodynamic response functions of water display anomalous behaviors. We study these anomalous behaviors in bulk and confined water. We use nuclear magnetic resonance (NMR) to examine the configurational specific heat and the transport parameters in both the thermal stable and the metastable supercooled phases. The data we obtain suggest that there is a behavior common to both phases: that the dynamics of water exhibit two singular temperatures belonging to the supercooled and the stable phase, respectively. One is the dynamic fragile-to-strong crossover temperature (T{sub L} ? 225K). The second, T{sup *} ? 315 5K, is a special locus of the isothermal compressibility K{sub T}(T, P) and the thermal expansion coefficient ?{sub P}(T, P) in the PT plane. In the case of water confined inside a protein, we observe that these two temperatures mark, respectively, the onset of protein flexibility from its low temperature glass state (T{sub L}) and the onset of the unfolding process (T{sup *})

  16. Solar energy collector

    DOE Patents [OSTI]

    Brin, Raymond L.; Pace, Thomas L.

    1978-01-01

    The invention relates to a solar energy collector comprising solar energy absorbing material within chamber having a transparent wall, solar energy being transmitted through the transparent wall, and efficiently absorbed by the absorbing material, for transfer to a heat transfer fluid. The solar energy absorbing material, of generally foraminous nature, absorbs and transmits the solar energy with improved efficiency.

  17. Solar Innovator | Alta Devices

    ScienceCinema (OSTI)

    Mattos, Laila; Le, Minh

    2013-05-29

    Selected to participate in the Energy Department's SunShot Initiative, Alta Devices produces solar cells that convert sunlight into electricity at world record-breaking levels of efficiency. Through its innovative solar technology Alta is helping bring down the cost of solar. Learn more about the Energy Department's efforts to advance solar technology at energy.gov/solar .

  18. ARM - Campaign Instrument - ec-convair580-bulk

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govInstrumentsec-convair580-bulk Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign Instrument : Environment Canada Convair 580 Bulk Parameters (EC-CONVAIR580-BULK) Instrument Categories Aerosols, Airborne Observations, Cloud Properties Campaigns Indirect and Semi-Direct Aerosol Campaign (ISDAC) [ Download Data ] North Slope Alaska, 2008.04.01 - 2008.04.30 Primary Measurements Taken The following measurements are those considered

  19. Highly efficient visible-light-induced photocatalytic activity of Bi{sub 2}WO{sub 6}/BiVO{sub 4} heterojunction photocatalysts

    SciTech Connect (OSTI)

    Chaiwichian, Saranyoo; Inceesungvorn, Burapat; Wetchakun, Khatcharin; Phanichphant, Sukon; Kangwansupamonkon, Wiyong; Wetchakun, Natda

    2014-06-01

    Highlights: Bi{sub 2}WO{sub 6}/BiVO{sub 4} heterojunction photocatalysts were obtained using hydrothermal method. Physicochemical properties played a significant role on photocatalytic efficiency. Bi{sub 2}WO{sub 6}/BiVO{sub 4} heterogeneous structures were greatly enhanced for degradation of MB. A tentative mechanism of charge transfer process in MB degradation was proposed. - Abstract: The Bi{sub 2}WO{sub 6}/BiVO{sub 4} heterojunction photocatalysts were synthesized by hydrothermal method. Physical properties of the heterojunction photocatalyst samples were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques. The XRD results indicated that BiVO{sub 4} retain monoclinic and tetragonal structures, while Bi{sub 2}WO{sub 6} presented as orthorhombic structure. The Brunauer, Emmett and Teller (BET) adsorptiondesorption of nitrogen gas for specific surface area determination at the temperature of liquid nitrogen was performed on all samples. UVvis diffuse reflectance spectra (UVvis DRS) were used to identify the absorption range and band gap energy of the heterojunction photocatalysts. The photocatalytic performance of Bi{sub 2}WO{sub 6}/BiVO{sub 4} heterojunction photocatalysts was studied via the photodegradation of methylene blue (MB) under visible light irradiation. The results indicated that the heterojunction photocatalyst at 0.5:0.5 mole ratio of Bi{sub 2}WO{sub 6}:BiVO{sub 4} shows the highest photocatalytic activity.

  20. Ensuring a Reliable Bulk Electric System | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Electric Reliability Corporation (NERC): Ensuring a Reliable Bulk Electric System Cooling Tower Report, October 2008 Transmission Constraints and Congestion in the Western...

  1. Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate

    Broader source: Energy.gov [DOE]

    This project is producing high-efficiency semipolar light-emitting diodes (LEDs) on low-defect bulk gallium nitride (GaN) substrates.

  2. Nanostructured High-Temperature Bulk Thermoelectric Energy Conversion...

    Broader source: Energy.gov (indexed) [DOE]

    Energy Conversion for Efficient Waste Heat Recovery Nanostructured High-Temperature Bulk Thermoelectric Energy Conversion for Efficient Automotive Waste Heat Recovery ...

  3. Federal Bulk Transmission Regulatory Roadmapping | OpenEI Community

    Open Energy Info (EERE)

    Federal Bulk Transmission Regulatory Roadmapping Home > Features > Groups Content Group Activity By term Q & A Feeds Content type Blog entry Discussion Document Event Poll...

  4. Strategies for High Thermoelectric zT in Bulk Materials

    Broader source: Energy.gov [DOE]

    Zintl principle in chemistry, complex electronic band structures, and incorporation of nanometer sized particles were used to explore, optimize and improve bulk thermoelectric materials

  5. Economic manufacturing of bulk metallic glass compositions by microalloying

    DOE Patents [OSTI]

    Liu, Chain T.

    2003-05-13

    A method of making a bulk metallic glass composition includes the steps of:a. providing a starting material suitable for making a bulk metallic glass composition, for example, BAM-11; b. adding at least one impurity-mitigating dopant, for example, Pb, Si, B, Sn, P, to the starting material to form a doped starting material; and c. converting the doped starting material to a bulk metallic glass composition so that the impurity-mitigating dopant reacts with impurities in the starting material to neutralize deleterious effects of the impurities on the formation of the bulk metallic glass composition.

  6. RAPID/BulkTransmission/Environment | Open Energy Information

    Open Energy Info (EERE)

    Policy Act (HEPA) Hawaii Department of Health Office of Environmental Quality Control Bulk Transmission Environment in Idaho Varies by local municipality Varies by...

  7. Enhancing covalent mechanochemistry in bulk polymers using electrospun...

    Office of Scientific and Technical Information (OSTI)

    Enhancing covalent mechanochemistry in bulk polymers using electrospun ABA triblock copolymers Citation Details In-Document Search Title: Enhancing covalent mechanochemistry in ...

  8. Recent Device Developments with Advanced Bulk Thermoelectric Materials at RTI

    Broader source: Energy.gov [DOE]

    Reviews work in engineered thin-film nanoscale thermoelectric materials and nano-bulk materials with high ZT undertaken by RTI in collaboration with its research partners

  9. RAPID/BulkTransmission/Site Considerations | Open Energy Information

    Open Energy Info (EERE)

    and comparison for Bulk Transmission Site Considerations across various states. To learn more detailed information about Site Considerations in a state, click on the...

  10. RAPID/BulkTransmission/About | Open Energy Information

    Open Energy Info (EERE)

    Current Topics in Bulk Transmission West-Wide Energy Corridor Programmatic Environmental Impact Statement The West-Wide Energy Corridor Programmatic Environmental Impact Statement...

  11. RAPID/BulkTransmission/Land Access | Open Energy Information

    Open Energy Info (EERE)

    RAPIDBulkTransmissionLand Access < RAPID | BulkTransmission(Redirected from RAPIDBulkTransmissionLeasing) Jump to: navigation, search RAPID Regulatory and Permitting...

  12. RAPID/BulkTransmission/Hawaii | Open Energy Information

    Open Energy Info (EERE)

    information about BulkTransmission in Hawaii. Use the Edit with form button to editupdate. Planning Organizations not provided Hawaii Owners not provided Current Projects not...

  13. RAPID/BulkTransmission/Alaska | Open Energy Information

    Open Energy Info (EERE)

    information about BulkTransmission in Alaska. Use the Edit with form button to editupdate. Planning Organizations not provided Alaska Owners not provided Current Projects not...

  14. RAPID/BulkTransmission/Texas | Open Energy Information

    Open Energy Info (EERE)

    information about BulkTransmission in Texas. Use the Edit with form button to editupdate. Planning Organizations not provided Texas Owners not provided Current Projects not...

  15. Investigation of Interfacial and Bulk Dissociation of HBr, HCl...

    Office of Scientific and Technical Information (OSTI)

    Investigation of Interfacial and Bulk Dissociation of HBr, HCl, and HNO3 Using Density Functional Theory-Based Molecular Dynamics Simulations Citation Details In-Document Search...

  16. RAPID/BulkTransmission/Colorado | Open Energy Information

    Open Energy Info (EERE)

    the Regional Entity responsible for coordinating and promoting Bulk Electric System reliability in the Western Interconnection, including in Colorado. In addition, WECC provides...

  17. RAPID/BulkTransmission/Idaho | Open Energy Information

    Open Energy Info (EERE)

    the Regional Entity responsible for coordinating and promoting Bulk Electric System reliability in the Western Interconnection, including in Idaho. In addition, WECC provides an...

  18. RAPID/BulkTransmission/Washington | Open Energy Information

    Open Energy Info (EERE)

    the Regional Entity responsible for coordinating and promoting Bulk Electric System reliability in the Western Interconnection, including in Washington. In addition, WECC provides...

  19. RAPID/BulkTransmission/Nevada | Open Energy Information

    Open Energy Info (EERE)

    the Regional Entity responsible for coordinating and promoting Bulk Electric System reliability in the Western Interconnection, including in Nevada. WECC also provides an...

  20. RAPID/BulkTransmission/Arizona | Open Energy Information

    Open Energy Info (EERE)

    the Regional Entity responsible for coordinating and promoting Bulk Electric System reliability in the Western Interconnection, including Arizona. WECC also provides an...

  1. RAPID/BulkTransmission/Oregon | Open Energy Information

    Open Energy Info (EERE)

    the Regional Entity responsible for coordinating and promoting Bulk Electric System reliability in the Western Interconnection, including Oregon. WECC also provides an environment...

  2. Category:Bulk Transmission Regulatory Roadmap Sections | Open...

    Open Energy Info (EERE)

    Login | Sign Up Search Category Edit History Category:Bulk Transmission Regulatory Roadmap Sections Jump to: navigation, search GRR-logo.png Looking for the RAPIDRoadmap?...

  3. Lithium Ion Solvation and Diffusion in Bulk Organic Electrolytes...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Lithium Ion Solvation and Diffusion in Bulk Organic Electrolytes from First Principles and ... Resource Relation: Journal Name: Journal of Physical Chemistry B, vol. ...

  4. High Heat Flux Thermoelectric Module Using Standard Bulk Material

    Office of Energy Efficiency and Renewable Energy (EERE)

    Presents high heat flux thermoelectric module design for cooling using a novel V-shaped shunt configuration with bulk TE elements achieving high area packing fractions

  5. The Best of Both Worlds: Bulk Diamond Properties Realized at...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    a level of crystallographic and electronic ordering in purified HPHT nanodiamonds that matches fundamental properties of bulk diamond to the nanoscale while retaining its...

  6. Increasing the efficiency of organic solar cells by photonic and electrostatic-field enhancements

    SciTech Connect (OSTI)

    Nalwa, Kanwar

    2012-11-03

    Organic photovoltaic (OPV) technology is an attractive solar-electric conversion paradigm due to the promise of low cost roll-to-roll production and amenability to flexible substrates. Power conversion efficiency (PCE) exceeding 7% has recently been achieved. OPV cells suffer from low charge carrier mobilities of polymers, leading to recombination losses, higher series resistances and lower fill-factors. Thus, it is imperative to develop fabrication methodologies that can enable efficient optical absorption in films thinner than optical absorption length. Active layers conformally deposited on light-trapping, microscale textured, grating-type surfaces is one possible approach to achieve this objective. In this study, 40% theoretical increase in photonic absorption over flat OPVs is shown for devices with textured geometry by the simulation results. For verifying this theoretical result and improving the efficiency of OPVs by light trapping, OPVs were fabricated on grating-type textured substrates possessing t pitch and -coat PV active-layer on these textured substrates led to over filling of the valleys and shunts at the crest, which severely affected the performance of the resultant PV devices. Thus, it is established that although the optical design is important for OPV performance but the potential of light trapping can only be effectively tapped if the textures are amenable for realizing a conformal active layer. It is discovered that if the height of the underlying topographical features is reduced to sub-micron regime (e.g. 300 nm) and the pitch is increased to more than a micron (e.g. 2 μm), the textured surface becomes amenable to coating a conformal PV active-layer. The resultant PV cells showed 100% increase in average light absorption near the band edge due to trapping of higher wavelength photons, and 20% improvement in power conversion efficiency as compared with the flat PV cell. Another factor that severely limits the performance of OPVs is recombination of charge carriers. Thus it becomes imperative to understand the effect of processing conditions such as spin coating speed and drying rate on defect density and hence induced carrier recombination mechanism. In this study, It is shown that slow growth (longer drying time) of the active-layer leads to reduction of sub-bandgap traps by an order of magnitude as compared to fast grown active-layer. By coupling the experimental results with simulations, it is demonstrated that at one sun condition, slow grown device has bimolecular recombination as the major loss mechanism while in the fast grown device with high trap density, the trap assisted recombination dominates. It has been estimated that non-radiative recombination accounts nearly 50% of efficiency loss in modern OPVs. Generally, an external bias (electric field) is required to collect all the photogenerated charges and thus prevent their recombination. The motivation is to induce additional electric field in otherwise low mobility conjugated polymer based active layer by incorporating ferroelectric dipoles. This is expected to facilitate singlet exciton dissociation in polymer matrix and impede charge transfer exciton (CTE) recombination at polymer:fullerene interface. For the first time, it is shown that the addition of ferroelectric dipoles to modern bulk heterojunction (BHJ) can significantly improve exciton dissociation, resulting in a ~50% enhancement of overall solar cell efficiency. The devices also exhibit the unique ferroelectric-photovoltaic effect with polarization-controlled power conversion efficiency.

  7. Structural and photovoltaic properties of a-Si (SNc)/c-Si heterojunction fabricated by EBPVD technique

    SciTech Connect (OSTI)

    Demiro?lu, D.; Kazmanli, K.; Urgen, M.; Tatar, B.

    2013-12-16

    In last two decades sculptured thin films are very attractive for researches. Some properties of these thin films, like high porosity correspondingly high large surface area, controlled morphology; bring into prominence on them. Sculptured thin films have wide application areas as electronics, optics, mechanics, magnetic and chemistry. Slanted nano-columnar (SnC) thin films are a type of sculptured thin films. In this investigation SnC thin films were growth on n-type crystalline Si(100) and p-type crystalline Si(111) via ultra-high vacuum electron beam evaporation technique. The structural and morphological properties of the amorphous silicon thin films were investigated by XRD, Raman and FE-SEM analysis. According to the XRD and Raman analysis the structure of thin film was amorphous and FE-SEM analysis indicated slanted nano-columns were formed smoothly. Slanted nano-columns a-Si/c-Si heterojunction were prepared as using a photovoltaic device. In this regard we were researched photovoltaic properties of these heterojunction with current-voltage characterization under dark and illumination conditions. Electrical parameters were determined from the current-voltage characteristic in the dark conditions zero-bias barrier height ?{sub B0}?=?0.83?1.00eV; diode ideality factor ??=?11.71?10.73; series resistance R{sub s}?=?260?31.1 k? and shunt resistance R{sub sh}?=?25.71?63.5 M? SnC a-Si/n-Si and SnC a-Si/p-Si heterojunctions shows a pretty good photovoltaic behavior about 10{sup 3}- 10{sup 4} times. The obtained photovoltaic parameters are such as short circuit current density J{sub sc} 83-40 mA/m{sup 2}, open circuit voltage V{sub oc} 900-831 mV.

  8. Bulk Vitrification Castable Refractory Block Protection Study

    SciTech Connect (OSTI)

    Hrma, Pavel R.; Bagaasen, Larry M.; Beck, Andrew E.; Brouns, Thomas M.; Caldwell, Dustin D.; Elliott, Michael L.; Matyas, Josef; Minister, Kevin BC; Schweiger, Michael J.; Strachan, Denis M.; Tinsley, Bronnie P.; Hollenberg, Glenn W.

    2005-05-01

    Bulk vitrification (BV) was selected for a pilot-scale test and demonstration facility for supplemental treatment to accelerate the cleanup of low-activity waste (LAW) at the Hanford U.S. DOE Site. During engineering-scale (ES) tests, a small fraction of radioactive Tc (and Re, its nonradioactive surrogate) were transferred out of the LAW glass feed and molten LAW glass, and deposited on the surface and within the pores of the castable refractory block (CRB). Laboratory experiments were undertaken to understand the mechanisms of the transport Tc/Re into the CRB during vitrification and to evaluate various means of CRB protection against the deposition of leachable Tc/Re. The tests used Re as a chemical surrogate for Tc. The tests with the baseline CRB showed that the molten LAW penetrates into CRB pores before it converts to glass, leaving deposits of sulfates and chlorides when the nitrate components decompose. Na2O from the LAW reacts with the CRB to create a durable glass phase that may contain Tc/Re. Limited data from a single CRB sample taken from an ES experiment indicate that, while a fraction of Tc/Re is present in the CRB in a readily leachable form, most of the Tc/Re deposited in the refractory is retained in the form of a durable glass phase. In addition, the molten salts from the LAW, mainly sulfates, chlorides, and nitrates, begin to evaporate from BV feeds at temperatures below 800 C and condense on solid surfaces at temperatures below 530 C. Three approaches aimed at reducing or preventing the deposition of soluble Tc/Re within the CRB were proposed: metal lining, sealing the CRB surface with a glaze, and lining the CRB with ceramic tiles. Metal liners were deemed unsuitable because evaluations showed that they can cause unacceptable distortions of the electric field in the BV system. Sodium silicate and a low-alkali borosilicate glaze were selected for testing. The glazes slowed down molten salt condensate penetration, but did little to reduce the penetration of molten salt. Out of several refractory tile candidates, only greystone and fused-cast alumina-zirconia-silica (AZS) refractory remained intact and well bonded to the CRB after firing to 1000 C. The deformation of the refractory-tile composite was avoided by prefiring the greystone tile to 800 C. Condensed vapors did not penetrate the tiles, but Re salts condensed on their surface. Refractory corrosion tests indicated that a 0.25-inch-thick greystone tile would not corrode during a BV melt. Tiles can reduce both vapor penetration and molten salt penetration, but vapor deposition above the melt line will occur even on tiles. The Tc/Re transport scenario was outlined as follows. At temperatures below 700 C, molten ionic salt (MIS) that includes all the Tc/Re penetrates, by capillarity, from the feed into the CRB open porosity. At approximately 750 C, the MIS decomposes through the loss of NOx, leaving mainly sulfate and chloride salts. The Na2O formed in the decomposition of the nitrates reacts with insoluble grains in the feed and with the aluminosilicates in the CRB to form more viscous liquids that reduce further liquid penetration into the CRB. At 800 to 1000 C, a continuous glass phase traps the remains of the MIS in the form of inclusions in the bulk glass melt. At 1000 to 1200 C, the salt inclusions in the glass slowly dissolve but also rise to the surface. The Tc/Re salts also evaporate from the free surface of the glass melt that is rapidly renewed by convective currents. The vapors condense on cooler surfaces in the upper portion of the CRB, the box lid, and the off-gas system.

  9. Silicon bulk micromachined hybrid dimensional artifact.

    SciTech Connect (OSTI)

    Claudet, Andre A.; Tran, Hy D.; Bauer, Todd Marks; Shilling, Katherine Meghan; Oliver, Andrew David

    2010-03-01

    A mesoscale dimensional artifact based on silicon bulk micromachining fabrication has been developed and manufactured with the intention of evaluating the artifact both on a high precision coordinate measuring machine (CMM) and video-probe based measuring systems. This hybrid artifact has features that can be located by both a touch probe and a video probe system with a k=2 uncertainty of 0.4 {micro}m, more than twice as good as a glass reference artifact. We also present evidence that this uncertainty could be lowered to as little as 50 nm (k=2). While video-probe based systems are commonly used to inspect mesoscale mechanical components, a video-probe system's certified accuracy is generally much worse than its repeatability. To solve this problem, an artifact has been developed which can be calibrated using a commercially available high-accuracy tactile system and then be used to calibrate typical production vision-based measurement systems. This allows for error mapping to a higher degree of accuracy than is possible with a glass reference artifact. Details of the designed features and manufacturing process of the hybrid dimensional artifact are given and a comparison of the designed features to the measured features of the manufactured artifact is presented and discussed. Measurement results from vision and touch probe systems are compared and evaluated to determine the capability of the manufactured artifact to serve as a calibration tool for video-probe systems. An uncertainty analysis for calibration of the artifact using a CMM is presented.

  10. Solar Energy Glossary

    Broader source: Energy.gov [DOE]

    The solar glossary contains definitions for technical terms related to solar power and photovoltaic (PV) technologies, including terms having to do with electricity, power generation, and concentrating solar power (CSP).

  11. Solar | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    How much do you know about solar power? Take our quiz and test your solar energy IQ. | Photo courtesy of NREL. How much do you know about solar power? Take our quiz and test your...

  12. Solar Easements & Rights Laws

    Broader source: Energy.gov [DOE]

    The Solar Recordation Act describes the procedures for filing a solar right through the County Clerk's Office. The property owner seeking the solar right must give advanced notice to the adjacent...

  13. Balance of optical, structural, and electrical properties of textured liquid phase crystallized Si solar cells

    SciTech Connect (OSTI)

    Preidel, V. Amkreutz, D.; Haschke, J.; Wollgarten, M.; Rech, B.; Becker, C.

    2015-06-14

    Liquid phase crystallized Si thin-film solar cells on nanoimprint textured glass substrates exhibiting two characteristic, but distinct different surface structures are presented. The impact of the substrate texture on light absorption, the structural Si material properties, and the resulting solar cell performance is analyzed. A pronounced periodic substrate texture with a vertical feature size of about 1 μm enables excellent light scattering and light trapping. However, it also gives rise to an enhanced Si crystal defect formation deteriorating the solar cell performance. In contrast, a random pattern with a low surface roughness of 45 nm allows for the growth of Si thin films being comparable to Si layers on planar reference substrates. Amorphous Si/crystalline Si heterojunction solar cells fabricated on the low-roughness texture exhibit a maximum open circuit voltage of 616 mV and internal quantum efficiency peak values exceeding 90%, resulting in an efficiency potential of 13.2%. This demonstrates that high quality crystalline Si thin films can be realized on nanoimprint patterned glass substrates by liquid phase crystallization inspiring the implementation of tailor-made nanophotonic light harvesting concepts into future liquid phase crystallized Si thin film solar cells on glass.

  14. ISOTOPIC MASS FRACTIONATION OF SOLAR WIND: EVIDENCE FROM FAST AND SLOW SOLAR WIND COLLECTED BY THE GENESIS MISSION

    SciTech Connect (OSTI)

    Heber, Veronika S.; Baur, Heinrich; Wieler, Rainer; Bochsler, Peter; McKeegan, Kevin D.; Neugebauer, Marcia; Reisenfeld, Daniel B.; Wiens, Roger C.

    2012-11-10

    NASA's Genesis space mission returned samples of solar wind collected over {approx}2.3 years. We present elemental and isotopic compositions of He, Ne, and Ar analyzed in diamond-like carbon targets from the slow and fast solar wind collectors to investigate isotopic fractionation processes during solar wind formation. The solar wind provides information on the isotopic composition for most volatile elements for the solar atmosphere, the bulk Sun and hence, on the solar nebula from which it formed 4.6 Ga ago. Our data reveal a heavy isotope depletion in the slow solar wind compared to the fast wind composition by 63.1 {+-} 2.1 per mille for He, 4.2 {+-} 0.5 per mille amu{sup -1} for Ne and 2.6 {+-} 0.5 per mille amu{sup -1} for Ar. The three Ne isotopes suggest that isotopic fractionation processes between fast and slow solar wind are mass dependent. The He/H ratios of the collected slow and fast solar wind samples are 0.0344 and 0.0406, respectively. The inefficient Coulomb drag model reproduces the measured isotopic fractionation between fast and slow wind. Therefore, we apply this model to infer the photospheric isotopic composition of He, Ne, and Ar from our solar wind data. We also compare the isotopic composition of oxygen and nitrogen measured in the solar wind with values of early solar system condensates, probably representing solar nebula composition. We interpret the differences between these samples as being due to isotopic fractionation during solar wind formation. For both elements, the magnitude and sign of the observed differences are in good agreement with the values predicted by the inefficient Coulomb drag model.

  15. Compound Solar Technology CompSolar | Open Energy Information

    Open Energy Info (EERE)

    Solar Technology CompSolar Jump to: navigation, search Name: Compound Solar Technology (CompSolar) Place: Jhunan, Taiwan Zip: 350 Sector: Solar Product: Producer of glass-based...

  16. Silicon Valley Solar Inc SV Solar | Open Energy Information

    Open Energy Info (EERE)

    Solar Inc SV Solar Jump to: navigation, search Name: Silicon Valley Solar Inc (SV Solar) Place: Santa Clara, California Zip: 95051 Sector: Solar Product: A US-based manufacturer of...

  17. Solar skylight

    DOE Patents [OSTI]

    Adamson, James C.

    1984-01-01

    A reflective shutter rotates within a skylight housing in such a fashion as to control solar energy thereby providing a combination of heating, lighting, and ventilation. The skylight housing has three faces: a glazed southern face, a glazed northern face, and an open downwardly oriented face to the interior of the structure. Counter-weighted pivot arms support the shutter at either end causing the center of rotation to pass through the center of gravity. The shutter has three basic positions: In the first position, during the winter day, the shutter closes off the northern face, allowing solar energy to enter directly into the supporting structure providing heat gain and daylighting. In the second position, during the winter night, the shutter closes off the open face to the interior, providing insulation between the structure and the skylight housing. In the third position, during the non-heating season, the shutter closes off the southern face blocking unwanted heat gain but allowing diffuse northern light to penetrate for daylighting. In this last position, a means is provided for ventilating by natural convection. The apparatus can be operated either manually or by motor.

  18. Solar collector

    DOE Patents [OSTI]

    Wilhelm, William G.

    1982-01-01

    The field of this invention is solar collectors, and more particularly, the invention pertains to a flat plate collector that employs high performance thin films. The solar collector of this invention overcomes several problems in this field, such as excessive hardware, cost and reliability, and other prior art drawbacks outlined in the specification. In the preferred form, the apparatus features a substantially rigid planar frame (14). A thin film window (42) is bonded to one planar side of the frame. An absorber (24) of laminate construction is comprised of two thin film layers (24a, 24b) that are sealed perimetrically. The layers (24a, 24b) define a fluid-tight planar envelope (24c) of large surface area to volume through which a heat transfer fluid flows. Absorber (24) is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  19. Your Solar Home

    Broader source: Energy.gov [DOE]

    Solar Schoolhouse Education supplement for the Sacramento Bee to introduce solar to elementary school children and introduce the design and AD contest for local students.

  20. Solar | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Solar Solar How much do you know about solar power? Take our quiz and test your solar energy IQ. | Photo courtesy of NREL. How much do you know about solar power? Take our quiz and test your solar energy IQ. | Photo courtesy of NREL. The tremendous growth in the U.S. solar industry is helping to pave the way to a cleaner, more sustainable energy future. Over the past few years, the cost of a solar energy system has dropped significantly -- helping to give more American families and business

  1. Solar Contractor Licensing

    Broader source: Energy.gov [DOE]

    Hawaii offers several specialty licenses for solar contractors through Hawaii’s Department of Commerce and Consumer Affairs. The following specialty licenses are available: Solar Power Systems...

  2. Solar Photovoltaic SPECIFICATION, CHECKLIST...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Ready Home SOLAR PHOTOVOLTAIC SPECIFICATION, CHECKLIST AND GUIDE i Table of Contents About the Renewable Energy Ready Home Specifications Assumptions of the RERH Solar ...

  3. Concentrating Solar Power

    SciTech Connect (OSTI)

    Solar Energy Technologies Program

    2010-09-28

    The fact sheet summarizes the goals and activities of the DOE Solar Energy Technologies Program efforts within its concentrating solar power subprogram.

  4. CPS Energy Solar Committee

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Large Scale Solar * Combine large-scale solar energy PPA with local economic development - ... transformer 1 Includes CAISO connection, data measuring, weather, etc. 1 Distribution ...

  5. Solar Power International

    Broader source: Energy.gov [DOE]

    Solar Power International in Anaheim, CA, received Vice President Joe Biden on Sept. 16. He announced more than $102 million in new solar funding.

  6. TVA- Solar Solutions Initiative

    Broader source: Energy.gov [DOE]

    Solar Solutions Initiative (SSI) is a pilot program that offers additional financial incentives for Solar PV systems participating in the Renewable Standard Offer program. Applications for new...

  7. Scattering Solar Thermal Concentrators

    Office of Environmental Management (EM)

    sunshot DOEGO-102012-3669 * September 2012 MOTIVATION All thermal concentrating solar power (CSP) systems use solar tracking, which involves moving large mirror surfaces...

  8. Solar Thermoelectric Energy Conversion

    Broader source: Energy.gov [DOE]

    Efficiencies of different types of solar thermoelectric generators were predicted using theoretical modeling and validated with measurements using constructed prototypes under different solar intensities

  9. Making a Solar Oven

    K-12 Energy Lesson Plans and Activities Web site (EERE)

    Students make solar ovens. Student background information is provided. The expected outcome is that students will learn about solar energy transfer.

  10. Solar Energy Technologies Office

    Broader source: Energy.gov [DOE]

    In 2011, the Energy Department's Solar Energy Technologies Office (SETO) became the SunShot Initiative, a collaborative national effort that aggressively drives innovation to make solar energy...

  11. Solarity | Open Energy Information

    Open Energy Info (EERE)

    Solarity Jump to: navigation, search Name: Solarity Address: 200 Innovation Blvd Suite 260A Place: State College, Pennsylvania Zip: 16801 Region: Northeast - NY NJ CT PA Area...

  12. Solar in Cold, Cloudy Climates

    Broader source: Energy.gov [DOE]

    Presentation delivered by Chuck Marken during the 2009 Northeastern Solar Cities Conference Solar Survey session.

  13. SunShot Solar PV | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Solar PV SunShot Solar PV

  14. Solar Easements & Local Option Solar Rights Laws

    Broader source: Energy.gov [DOE]

    The New York General City, Town, and Village codes also allow local zoning districts to make regulations regarding solar access that provide for "the accommodation of solar energy systems and...

  15. Bulk Hauling Equipment for CHG | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Bulk Hauling Equipment for CHG Bulk Hauling Equipment for CHG This presentation by Don Baldwin of Hexagon Composites was given at the DOE Hydrogen Compression, Storage, and Dispensing Workshop in March 2013. PDF icon csd_workshop_8_baldwin.pdf More Documents & Publications Tank Manufacturing, Testing, Deployment and Field Performance Hydrogen Delivery Roadmap US DRIVE Hydrogen Delivery Technical Team Roadmap

  16. Flix Solar | Open Energy Information

    Open Energy Info (EERE)

    Flix Solar Jump to: navigation, search Name: Flix Solar Place: Spain Sector: Solar Product: Flix solar is developing a 12MW solar park in Flix, Tarragona, Spain. References: Flix...

  17. Carbon nanotubes grown on bulk materials and methods for fabrication

    DOE Patents [OSTI]

    Menchhofer, Paul A.; Montgomery, Frederick C.; Baker, Frederick S.

    2011-11-08

    Disclosed are structures formed as bulk support media having carbon nanotubes formed therewith. The bulk support media may comprise fibers or particles and the fibers or particles may be formed from such materials as quartz, carbon, or activated carbon. Metal catalyst species are formed adjacent the surfaces of the bulk support material, and carbon nanotubes are grown adjacent the surfaces of the metal catalyst species. Methods employ metal salt solutions that may comprise iron salts such as iron chloride, aluminum salts such as aluminum chloride, or nickel salts such as nickel chloride. Carbon nanotubes may be separated from the carbon-based bulk support media and the metal catalyst species by using concentrated acids to oxidize the carbon-based bulk support media and the metal catalyst species.

  18. New concepts for high efficiency energy conversion: The avalanche heterostructure and superlattice solar cells. Subcontract report, 1 June 1987--31 January 1990

    SciTech Connect (OSTI)

    Summers, C.J.; Rohatgi, A.; Torabi, A.; Harris, H.M.

    1993-01-01

    This report describes investigation into the theory and technology of a novel heterojunction or superlattice, single-junction solar cell, which injects electrons across the heterointerface to produce highly efficient impact ionization of carriers in the lowband-gap side of the junction, thereby conserving their total energy. Also, the superlattice structure has the advantage of relaxing the need for perfect lattice matching at the p-n interface and will inhibit the cross diffusion of dopant atoms that typically occurs in heavy doping. This structure avoids the use of tunnel junctions that make it very difficult to achieve the predicted efficiencies in cascade cells, thus making it possible to obtain energy efficiencies that are competitive with those predicted for cascade solar cells with reduced complexity and cost. This cell structure could also be incorporated into other solar cell structures designed for wider spectral coverage.

  19. Sunshot Rooftop Solar Challenge | Department of Energy

    Energy Savers [EERE]

    Sunshot Rooftop Solar Challenge Sunshot Rooftop Solar Challenge Sunshot Rooftop Solar Challenge

  20. Solar collector

    DOE Patents [OSTI]

    Wilhelm, W.G.

    The invention pertains to a flat plate collector that employs high performance thin films. The solar collector of this invention overcomes several problems in this field, such as excessive hardware, cost and reliability, and other prior art drawbacks outlined in the specification. In the preferred form, the apparatus features a substantially rigid planar frame. A thin film window is bonded to one planar side of the frame. An absorber of laminate construction is comprised of two thin film layers that are sealed perimetrically. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. Absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  1. Heterojunction metal-oxide-metal Au-Fe{sub 3}O{sub 4}-Au single nanowire device for spintronics

    SciTech Connect (OSTI)

    Reddy, K. M. Punnoose, Alex; Hanna, Charles; Padture, Nitin P.

    2015-05-07

    In this report, we present the synthesis of heterojunction magnetite nanowires in alumina template and describe magnetic and electrical properties from a single nanowire device for spintronics applications. Heterojunction Au-Fe-Au nanowire arrays were electrodeposited in porous aluminum oxide templates, and an extensive and controlled heat treatment process converted Fe segment to nanocrystalline cubic magnetite phase with well-defined Au-Fe{sub 3}O{sub 4} interfaces as confirmed by the transmission electron microscopy. Magnetic measurements revealed Verwey transition shoulder around 120 K and a room temperature coercive field of 90 Oe. Current–voltage (I-V) characteristics of a single Au-Fe{sub 3}O{sub 4}-Au nanowire have exhibited Ohmic behavior. Anomalous positive magnetoresistance of about 0.5% is observed on a single nanowire, which is attributed to the high spin polarization in nanowire device with pure Fe{sub 3}O{sub 4} phase and nanocontact barrier. This work demonstrates the ability to preserve the pristine Fe{sub 3}O{sub 4} and well defined electrode contact metal (Au)–magnetite interface, which helps in attaining high spin polarized current.

  2. Tunable Polarity Behavior and Self-Driven Photoswitching in p-WSe2/n-WS2 Heterojunctions

    SciTech Connect (OSTI)

    Huo, Nengjie; Yang, Juehan; Huang, Le; Wei, Zhongming; Li, Shu-Shen; Wei, Su-Huai; Li, Jingbo

    2015-08-21

    In Van der Waals (vdW) p–n heterojunctions consisting of various 2D layer compounds are fascinating new artificial materials that can possess novel physics and functionalities enabling the next-generation of electronics and optoelectronics devices. Here, it is reported that the WSe2/WS2 p–n heterojunctions perform novel electrical transport properties such as distinct rectifying, ambipolar, and hysteresis characteristics. Intriguingly, the novel tunable polarity transition along a route of n-“anti-bipolar”–p-ambipolar is observed in the WSe2/WS2 heterojunctions owing to the successive work of conducting channels of junctions, p-WSe2 and n-WS2 on the electrical transport of the whole systems. Moreover, the type-II band alignment we obtained from first principle calculations and built-in potential in this vdW heterojunction can also facilitate the efficient electron–hole separation, thus enabling the significant photovoltaic effect and a much enhanced self-driven photoswitching response in this system.

  3. Applications of solar reforming technology

    SciTech Connect (OSTI)

    Spiewak, I.; Tyner, C.E.; Langnickel, U.

    1993-11-01

    Research in recent years has demonstrated the efficient use of solar thermal energy for driving endothermic chemical reforming reactions in which hydrocarbons are reacted to form synthesis gas (syngas). Closed-loop reforming/methanation systems can be used for storage and transport of process heat and for short-term storage for peaking power generation. Open-loop systems can be used for direct fuel production; for production of syngas feedstock for further processing to specialty chemicals and plastics and bulk ammonia, hydrogen, and liquid fuels; and directly for industrial processes such as iron ore reduction. In addition, reforming of organic chemical wastes and hazardous materials can be accomplished using the high-efficiency destruction capabilities of steam reforming. To help identify the most promising areas for future development of this technology, we discuss in this paper the economics and market potential of these applications.

  4. Solar Policy Environment: Sacramento

    Broader source: Energy.gov [DOE]

    The City of Sacramento and the greater Sacramento region is the home of a long standing history of commitment to solar. Sacramento Solar Access seeks to further widespread adoption of solar energy by addressing current market barriers and preparing, through design guidelines and education, the infrastructure that will optimize solar production in the future.

  5. Solar Policy Environment: Houston

    Broader source: Energy.gov [DOE]

    The City of Houston is committed to achieving a sustainable solar infrastructure through strategic partnerships that address market barriers for solar energy through the Houston Solar Initiative. The initiative is dedicated to this long-term goal while focusing on near- and mid-term results that go beyond demonstration solar projects.

  6. Photovoltaic solar concentrator

    DOE Patents [OSTI]

    Nielson, Gregory N.; Cruz-Campa, Jose Luis; Okandan, Murat; Resnick, Paul J.; Sanchez, Carlos Anthony; Clews, Peggy J.; Gupta, Vipin P.

    2015-09-08

    A process including forming a photovoltaic solar cell on a substrate, the photovoltaic solar cell comprising an anchor positioned between the photovoltaic solar cell and the substrate to suspend the photovoltaic solar cell from the substrate. A surface of the photovoltaic solar cell opposite the substrate is attached to a receiving substrate. The receiving substrate may be bonded to the photovoltaic solar cell using an adhesive force or a metal connecting member. The photovoltaic solar cell is then detached from the substrate by lifting the receiving substrate having the photovoltaic solar cell attached thereto and severing the anchor connecting the photovoltaic solar cell to the substrate. Depending upon the type of receiving substrate used, the photovoltaic solar cell may be removed from the receiving substrate or remain on the receiving substrate for use in the final product.

  7. Bulk Energy Storage Webinar Rescheduled for February 9, 2012 | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Energy Bulk Energy Storage Webinar Rescheduled for February 9, 2012 Bulk Energy Storage Webinar Rescheduled for February 9, 2012 February 1, 2012 - 12:48pm Addthis The U.S. Department of Energy (DOE) and the Iowa Stored Energy Park (ISEP) are conducting a free, 1-hour webinar, Lessons from Iowa: The Economic, Market, and Organizational Issues in Making Bulk Energy Storage Work, on Thursday, February 9, 2012 at 1 p.m. ET. Presenters include Dr. Imre Gyuk of DOE's Office of Electricity

  8. Boundary Entropy Can Increase Under Bulk RG Flow (Journal Article) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Boundary Entropy Can Increase Under Bulk RG Flow Citation Details In-Document Search Title: Boundary Entropy Can Increase Under Bulk RG Flow The boundary entropy log(g) of a critical one-dimensional quantum system (or two-dimensional conformal field theory) is known to decrease under renormalization group (RG) flow of the boundary theory. We study instead the behavior of the boundary entropy as the bulk theory flows between two nearby critical points. We use conformal

  9. NREL: Innovation Impact - Solar

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Energy Menu Home Home Solar Solar Wind Wind Analysis Analysis Bioenergy Bioenergy Buildings Buildings Transportation Transportation Manufacturing Manufacturing Energy Systems Integration Energy Systems Integration What is a quantum dot? Close Quantum dots are tiny spheres of semiconductor material measuring only about 2-10 billionths of a meter in diameter. Quantum dots are a leading candidate for a third generation of solar-cell technologies. Close Achieving significant gains in solar

  10. Solar Energy in Alaska

    Energy Savers [EERE]

    Evolution and Diffusion Studies Solar Energy Evolution and Diffusion Studies Solar Energy Evolution and Diffusion Studies Through the Solar Energy Evolution and Diffusion Studies, or SEEDS, program, seven projects are investigating strategies to accelerate the pace of change for solar energy technologies as they are developed and deployed. The projects integrate the use of cutting-edge analytical and computational tools with real-world market data and pilot tests to speed the pace of solar

  11. Solar collector array

    DOE Patents [OSTI]

    Hall, John Champlin; Martins, Guy Lawrence

    2015-09-06

    A method and apparatus for efficient manufacture, assembly and production of solar energy. In one aspect, the apparatus may include a number of modular solar receiver assemblies that may be separately manufactured, assembled and individually inserted into a solar collector array housing shaped to receive a plurality of solar receivers. The housing may include optical elements for focusing light onto the individual receivers, and a circuit for electrically connecting the solar receivers.

  12. Solar Policy Environment: Pittsburgh

    Office of Energy Efficiency and Renewable Energy (EERE)

    In this project, Pittsburgh plans to build on its reputation as a national leader in green practices. Its Solar America Cities project will develop a distributed approach to adoption of solar energy technologies. Pittsburgh’s partnership includes universities, non-profit organizations, and business, labor and foundation communities. The city plans to transform the solar energy market and stimulate early adoption of solar technology, to show that solar technology works in a northern city.

  13. Hetero-junctions of Boron Nitride and Carbon Nanotubes: Synthesis and Characterization

    SciTech Connect (OSTI)

    Yap, Yoke Khin

    2013-03-14

    Hetero-junctions of boron nitride nanotubes (BNNTs) and carbon nanotubes (CNTs) are expected to have appealing new properties that are not available from pure BNNTs and CNTs. Theoretical studies indicate that BNNT/CNT junctions could be multifunctional and applicable as memory, spintronic, electronic, and photonics devices with tunable band structures. This will lead to energy and material efficient multifunctional devices that will be beneficial to the society. However, experimental realization of BNNT/CNT junctions was hindered by the absent of a common growth technique for BNNTs and CNTs. In fact, the synthesis of BNNTs was very challenging and may involve high temperatures (up to 3000 degree Celsius by laser ablation) and explosive chemicals. During the award period, we have successfully developed a simple chemical vapor deposition (CVD) technique to grow BNNTs at 1100-1200 degree Celsius without using dangerous chemicals. A series of common catalyst have then been identified for the synthesis of BNNTs and CNTs. Both of these breakthroughs have led to our preliminary success in growing two types of BNNT/CNT junctions and two additional new nanostructures: 1) branching BNNT/CNT junctions and 2) co-axial BNNT/CNT junctions, 3) quantum dots functionalized BNNTs (QDs-BNNTs), 4) BNNT/graphene junctions. We have started to understand their structural, compositional, and electronic properties. Latest results indicate that the branching BNNT/CNT junctions and QDs-BNNTs are functional as room-temperature tunneling devices. We have submitted the application of a renewal grant to continue the study of these new energy efficient materials. Finally, this project has also strengthened our collaborations with multiple Department of Energy’s Nanoscale Science Research Centers (NSRCs), including the Center for Nanophase Materials Sciences (CNMS) at Oak Ridge National Laboratory, and the Center for Integrated Nanotechnologies (CINTs) at Sandia National Laboratories and Los Alamos National Laboratory. Results obtained during the current funding period have led to the publication of twelve peer reviewed articles, three review papers, two book and one encyclopedia chapters, and thirty eight conference/seminar presentation. One US provisional patent and one international patent have also been filed.

  14. Topaz Solar Farm Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Topaz Solar Farm Sector Solar Facility Type Photovoltaic Developer OptiSolar Location San Luis Obispo County, California Coordinates 35.3102296, -120.4357631 Show Map...

  15. SolarIsland aka Yinghua Taian Dazheng Hengyuan Solar Technology...

    Open Energy Info (EERE)

    China Zip: 271000 Sector: Solar Product: Manufacturer and exporter of solar passive water heating systems and PV-powered solar road lighting, torches and lamps. References:...

  16. Amargosa Farm Road Solar Energy Project Solar Power Plant | Open...

    Open Energy Info (EERE)

    Sector Solar Facility Type Concentrating Solar Power Developer Solar Millenium, LLC, MAN Ferrostaal Inc Location Nye County, Nevada Coordinates 38.5807111, -116.0413889...

  17. China Solar Clean Energy Solutions Inc formerly Deli Solar USA...

    Open Energy Info (EERE)

    Inc formerly Deli Solar USA Inc Jump to: navigation, search Name: China Solar & Clean Energy Solutions Inc ( formerly Deli Solar (USA) Inc) Place: Connecticut Zip: 6039 Sector:...

  18. EPOD Solar Wales Ltd formerly ICP Solar Technologies Ltd | Open...

    Open Energy Info (EERE)

    Wales Ltd formerly ICP Solar Technologies Ltd Jump to: navigation, search Name: EPOD Solar (Wales) Ltd (formerly ICP Solar Technologies Ltd) Place: Mid Glamorgan, United Kingdom...

  19. United Solar Systems Corp USSC aka Bekaert ECD Solar Systems...

    Open Energy Info (EERE)

    Systems Corp USSC aka Bekaert ECD Solar Systems LLC Jump to: navigation, search Name: United Solar Systems Corp (USSC) (aka Bekaert ECD Solar Systems LLC) Place: Middletown...

  20. Solar Energy Sources SES Solar Inc formerly Electric Network...

    Open Energy Info (EERE)

    SES Solar Inc formerly Electric Network com Jump to: navigation, search Name: Solar Energy Sources - SES Solar Inc (formerly Electric Network.com) Place: Vancouver, British...

  1. Solar Systems and Solutions Soluciones Sistemas Solares 3S |...

    Open Energy Info (EERE)

    Systems and Solutions Soluciones Sistemas Solares 3S Jump to: navigation, search Name: Solar Systems and Solutions Soluciones Sistemas Solares (3S) Place: Navarre, Spain Sector:...

  2. DE-EE0005690 Developing Solar Friendly Communities Colorado Solar...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    EE0005690 Developing Solar Friendly Communities Colorado Solar Energy Industries ... A. PROJECT OBJECTIVES The goal of the Solar Friendly Communities project is to achieve ...

  3. Vaillant Solar Systems | Open Energy Information

    Open Energy Info (EERE)

    Zip: 92075 Sector: Solar Product: California-based solar company specializing in solar water heating, solar pool heating and solar space heating systems for residential and...

  4. MSM Solar India | Open Energy Information

    Open Energy Info (EERE)

    Solar India Jump to: navigation, search Name: MSM Solar India Place: India Sector: Solar Product: JV company to develop solar projects. References: MSM Solar India1 This article...

  5. Ener Solar Technology srl | Open Energy Information

    Open Energy Info (EERE)

    Ener Solar Technology srl Jump to: navigation, search Name: Ener Solar Technology srl Place: Italy Sector: Solar Product: Solar project developer. References: Ener Solar Technology...

  6. Solar Reflection Panels - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Thermal Solar Thermal Solar Photovoltaic Solar Photovoltaic Find More Like This Return to Search Solar Reflection Panels Sandia National Laboratories Contact SNL About This ...

  7. Solar Selective Absorption Coatings - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Thermal Solar Thermal Solar Photovoltaic Solar Photovoltaic Find More Like This Return to Search Solar Selective Absorption Coatings Sandia National Laboratories Contact SNL ...

  8. Mohave Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Solar Power Plant Jump to: navigation, search Name Mohave Solar Power Plant Facility Mojave Solar Sector Solar Facility Type Concentrating Solar Power Facility Status Under...

  9. Solar and Wind Rights | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    - Passive Solar Water Heat Solar Space Heat Solar Thermal Electric Solar Thermal Process Heat Solar Photovoltaics Wind (All) Wind (Small) Program Info Sector Name State State...

  10. Solar Easements & Rights Laws | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Nonprofit Residential Schools State Government Federal Government Savings Category Solar - Passive Solar Water Heat Solar Space Heat Solar Thermal Electric Solar Thermal Process...

  11. Sun Shine Solar | Open Energy Information

    Open Energy Info (EERE)

    Shine Solar Jump to: navigation, search Logo: Sun Shine Solar Name: Sun Shine Solar Place: Norwich, United Kingdom Sector: Solar Product: Solar energy products Phone Number: 01508...

  12. Sandia Energy - Solar Glare Hazard Analysis Tool

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Glare Hazard Analysis Tool Home Stationary Power Energy Conversion Efficiency Solar Energy Photovoltaics Solar Market Transformation Solar Glare Hazard Analysis Tool Solar...

  13. Bulk viscosity of anisotropically expanding hot QCD plasma

    SciTech Connect (OSTI)

    Chandra, Vinod

    2011-11-01

    The bulk viscosity, {zeta} and its ratio with the shear viscosity, {zeta}/{eta} have been studied in an anisotropically expanding pure glue plasma in the presence of turbulent color fields. It has been shown that the anisotropy in the momentum distribution function of gluons, which has been determined from a linearized transport equation eventually leads to the bulk viscosity. For the isotropic (equilibrium) state, a recently proposed quasiparticle model of pure SU(3) lattice QCD equation of state has been employed where the interactions are encoded in the effective fugacity. It has been argued that the interactions present in the equation of state, significantly contribute to the bulk viscosity. Its ratio with the shear viscosity is significant even at 1.5T{sub c}. Thus, one needs to take in account the effects of the bulk viscosity while studying the hydrodynamic expansion of quark-gluon plasma in the Relativistic Heavy Ion Collider and the Large Hadron Collider.

  14. Interplay of topological surface and bulk electronic states in...

    Office of Scientific and Technical Information (OSTI)

    Title: Interplay of topological surface and bulk electronic states in Bi2Se3 Authors: Romanowich, Megan ; Lee, Mal-Soon ; Chung, Duck-Young ; Mahanti, S. D. ; Kanatzidis, Mercouri ...

  15. Development of a Wet Logistics System for Bulk Corn Stover

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    a Wet Logistics System for Bulk Corn Stover March 25, 2015 Lynn M. Wendt, William A. Smith, Austin Murphy, and Ian J. Bonner Idaho National Laboratory This presentation does not ...

  16. Enhancing covalent mechanochemistry in bulk polymers using electrospun ABA

    Office of Scientific and Technical Information (OSTI)

    triblock copolymers (Journal Article) | SciTech Connect Enhancing covalent mechanochemistry in bulk polymers using electrospun ABA triblock copolymers Citation Details In-Document Search Title: Enhancing covalent mechanochemistry in bulk polymers using electrospun ABA triblock copolymers Authors: Black Ramirez, A. L. ; Schmitt, A. K. ; Mahanthappa, M. K. ; Craig, S. L. [1] ; Duke) [2] + Show Author Affiliations UW ( Publication Date: 2016-01-20 OSTI Identifier: 1235465 Resource Type: Journal

  17. Linux Kernel Co-Scheduling For Bulk Synchronous Parallel Applications

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Linux Kernel Co-Scheduling For Bulk Synchronous Parallel Applications Citation Details In-Document Search Title: Linux Kernel Co-Scheduling For Bulk Synchronous Parallel Applications This paper describes a kernel scheduling algorithm that is based on co-scheduling principles and that is intended for parallel applications running on 1000 cores or more where inter-node scalability is key. Experimental results for a Linux implementation on a Cray XT5 machine are

  18. Linux Kernel Co-Scheduling and Bulk Synchronous Parallelism (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Linux Kernel Co-Scheduling and Bulk Synchronous Parallelism Citation Details In-Document Search Title: Linux Kernel Co-Scheduling and Bulk Synchronous Parallelism This paper describes a kernel scheduling algorithm that is based on coscheduling principles and that is intended for parallel applications running on 1000 cores or more. Experimental results for a Linux implementation on a Cray XT5 machine are presented. The results indicate that Linux is a suitable

  19. Compositional ordering and stability in nanostructured, bulk thermoelectric alloys.

    SciTech Connect (OSTI)

    Hekmaty, Michelle A.; Faleev, S.; Medlin, Douglas L.; Leonard, F.; Lensch-Falk, J.; Sharma, Peter Anand; Sugar, J. D.

    2009-09-01

    Thermoelectric materials have many applications in the conversion of thermal energy to electrical power and in solid-state cooling. One route to improving thermoelectric energy conversion efficiency in bulk material is to embed nanoscale inclusions. This report summarize key results from a recently completed LDRD project exploring the science underpinning the formation and stability of nanostructures in bulk thermoelectric and the quantitative relationships between such structures and thermoelectric properties.

  20. THRESHOLD RADIOACTIVITY FOR BULK FOOD SAMPLES BY GAMMA SPECTROSCOPY

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect THRESHOLD RADIOACTIVITY FOR BULK FOOD SAMPLES BY GAMMA SPECTROSCOPY Citation Details In-Document Search Title: THRESHOLD RADIOACTIVITY FOR BULK FOOD SAMPLES BY GAMMA SPECTROSCOPY Authors: Yakabe, H.M. ; Neilson, H. Publication Date: 1965-02-01 OSTI Identifier: 4654936 Resource Type: Journal Article Resource Relation: Journal Name: J. Assoc. Offic. Agr. Chemists; Journal Volume: Vol: 48; Other Information: Orig. Receipt Date: 31-DEC-65 Research Org: Div. of

  1. Correlation Between Structure and Thermoelectric Properties of Bulk High

    Broader source: Energy.gov (indexed) [DOE]

    Performance Materials for Energy Conversion | Department of Energy Rapid solidified precursor converted into crystalline bulks under pressure produced thermoelectric materials of nano-sized grains with strongly coupled grain boundaries, achieving reduced lattice thermal conductivity and increased power factor PDF icon li.pdf More Documents & Publications Correlation Between Structure and Thermoelectric Properties of Bulk High Performance Materials for Energy Conversion Integrated Design

  2. Sun Solar | Open Energy Information

    Open Energy Info (EERE)

    Sun Solar Jump to: navigation, search Name: Sun Solar Place: San Diego, California Zip: 92019 Sector: Services, Solar Product: String representation "Established in ... e...

  3. Paz Solar | Open Energy Information

    Open Energy Info (EERE)

    Paz Solar Jump to: navigation, search Name: Paz Solar Place: Israel Product: Israel-based engineering and installation contractor. References: Paz Solar1 This article is a stub....

  4. Aztec Solar | Open Energy Information

    Open Energy Info (EERE)

    Rancho Cordova, California Zip: 95742 Sector: Solar Product: Installer of solar hot water and pool heating systems. References: Aztec Solar1 This article is a stub. You can...

  5. ESPEE Solar | Open Energy Information

    Open Energy Info (EERE)

    Karnataka, India Zip: 560 091 Sector: Solar Product: Distributor of solar thermal water heating systems and PV lights. References: ESPEE Solar1 This article is a stub....

  6. Apros Solar | Open Energy Information

    Open Energy Info (EERE)

    Apros Solar Jump to: navigation, search Name: Apros Solar Place: Prague 2, Czech Republic Zip: 120 00 Product: Czech developer of PV projects. References: Apros Solar1 This...

  7. Solar Mimizan | Open Energy Information

    Open Energy Info (EERE)

    Mimizan Jump to: navigation, search Name: Solar Mimizan Place: PARIS, France Zip: 75002 Sector: Solar Product: Paris-based, building-integrated solar power plant developer....

  8. Tessera Solar | Open Energy Information

    Open Energy Info (EERE)

    search Logo: Tessera Solar Name: Tessera Solar Address: 2600 10th Street Place: Berkeley, California Zip: 94710 Region: Bay Area Sector: Solar Product: Developer of utility...

  9. Harvest Solar | Open Energy Information

    Open Energy Info (EERE)

    Harvest Solar Energy Name: Harvest Solar Energy Address: 1571 East 22 Place Place: Tulsa, Oklahoma Zip: 74114 Sector: Solar Product: Renewable energy systems Phone Number:...

  10. Abound Solar | Open Energy Information

    Open Energy Info (EERE)

    Abound Solar Jump to: navigation, search Logo: Abound Solar Name: Abound Solar Address: 2695 Rocky Mountain Avenue, Suite 100 Place: Loveland, Colorado Zip: 80538 Region: Rockies...

  11. Select Solar | Open Energy Information

    Open Energy Info (EERE)

    Solar Jump to: navigation, search Logo: Select Solar Name: Select Solar Address: Unit 5 Blakehill Business Park Chelworth Road Cricklade SN6 6JD Place: Cricklade, United Kingdom...

  12. Solar Community | Open Energy Information

    Open Energy Info (EERE)

    Community Jump to: navigation, search Name: Solar Community Address: 4704 E Cesar Chavez St Place: Austin, Texas Zip: 78702 Region: Texas Area Sector: Solar Product: Solar sales...

  13. Solar Monkey | Open Energy Information

    Open Energy Info (EERE)

    Monkey Jump to: navigation, search Name: Solar Monkey Place: Irvine, California Zip: 92618 Sector: Solar Product: Solar Monkey installs PV systems for commercial and industrial...

  14. Solar Power | Open Energy Information

    Open Energy Info (EERE)

    Get Involved Help Apps Datasets Community Login | Sign Up Search Gateway Edit History Solar Power (Redirected from Solar energy) Jump to: navigation, search Solar Energy...

  15. Solar Wind | Open Energy Information

    Open Energy Info (EERE)

    Wind Jump to: navigation, search Name: Solar Wind Place: Krasnodar, Romania Zip: 350000 Sector: Solar, Wind energy Product: Russia-based PV product manufacturer. Solar Wind...

  16. Solar Junction | Open Energy Information

    Open Energy Info (EERE)

    Junction Jump to: navigation, search Name: Solar Junction Place: San Jose, California Zip: CA 95131 Sector: Efficiency, Solar Product: Solar Junction is developing high efficiency...

  17. Solar Power | Open Energy Information

    Open Energy Info (EERE)

    Get Involved Help Apps Datasets Community Login | Sign Up Search Gateway Edit History Solar Power (Redirected from Solar) Jump to: navigation, search Solar Energy Companies...

  18. Activ Solar | Open Energy Information

    Open Energy Info (EERE)

    Activ Solar Jump to: navigation, search Name: Activ Solar Address: Vienna, Wipplingerstrasse 35 Place: Austria Zip: 1010 Sector: Solar Product: The company's main business areas...

  19. Agrupacion Solar | Open Energy Information

    Open Energy Info (EERE)

    Solar Jump to: navigation, search Name: Agrupacion Solar Place: Spain Product: Spanish PV project developer, or finance arranger. References: Agrupacion Solar1 This article is a...

  20. EMPE Solar | Open Energy Information

    Open Energy Info (EERE)

    EMPE Solar Jump to: navigation, search Name: EMPE Solar Place: Spain Product: Developing projects using new module technology, in Spain. References: EMPE Solar1 This article is a...