National Library of Energy BETA

Sample records for bulk gallium nitride

  1. Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate Presenter: Arpan Chakraborty, Soraa Inc. This...

  2. P-type gallium nitride

    DOE Patents [OSTI]

    Rubin, Michael (Berkeley, CA); Newman, Nathan (Montara, CA); Fu, Tracy (Berkeley, CA); Ross, Jennifer (Pleasanton, CA); Chan, James (Berkeley, CA)

    1997-01-01

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

  3. P-type gallium nitride

    DOE Patents [OSTI]

    Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

    1997-08-12

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

  4. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, J.C.; Shul, R.J.

    1999-02-02

    An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

  5. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, John C. (Albuquerque, NM); Shul, Randy J. (Albuquerque, NM)

    1999-01-01

    An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

  6. Delta-phase manganese gallium on gallium nitride: a magnetically tunable spintronic system

    E-Print Network [OSTI]

    Delta-phase manganese gallium on gallium nitride: a magnetically tunable spintronic system Kangkang to their potential for novel spintronics applications such as spin light-emitting diodes[1] . Delta phase manganese slightly the Mn:Ga atom concentration. While many important spintronics properties, such as spin injection

  7. Pyrolysis approach to the synthesis of gallium nitride nanorods Wei-Qiang Han and Alex Zettla)

    E-Print Network [OSTI]

    Zettl, Alex

    Pyrolysis approach to the synthesis of gallium nitride nanorods Wei-Qiang Han and Alex Zettla for publication 26 October 2001 Herein we describe a pyrolysis route to the synthesis of gallium nitride GaN nanorods. GaN nanorods have been grown by the pyrolysis of gallium dimethylamide and ferrocene under

  8. Neutron detection using boron gallium nitride semiconductor material

    SciTech Connect (OSTI)

    Atsumi, Katsuhiro [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Inoue, Yoku; Nakano, Takayuki, E-mail: ttnakan@ipc.shizuoka.ac.jp [Department of Electrical and Materials Science, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Mimura, Hidenori; Aoki, Toru [Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011 (Japan)

    2014-03-01

    In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to ?-rays but poor sensitivity to ?-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after ?-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

  9. Au-free Ohmic Contacts to Gallium Nitride and Graphene 

    E-Print Network [OSTI]

    Ravikirthi, Pradhyumna

    2014-08-10

    -sputtered contact. 20 3. AU-FREE SCHEME FOR GALLIUM NITRIDE 3.1. Survey of Au-free contacts in literature and scope for improvement For n-type GaN, it was observed that aluminium and gold form poor ohmic contacts (resistances in the order of 10-3 ?/cm2...] used Ti/Al and found better results for ohmic resistance compared to GaN[17]. However, Ti/Al contacts lost its stability at high temperatures due to formation of aluminium lumps on the surface, increasing its roughness and resistance. Fan et al [20...

  10. Smooth cubic commensurate oxides on gallium nitride

    SciTech Connect (OSTI)

    Paisley, Elizabeth A.; Gaddy, Benjamin E.; LeBeau, James M.; Shelton, Christopher T.; Losego, Mark D.; Mita, Seiji; Collazo, Ramón; Sitar, Zlatko; Irving, Douglas L.; Maria, Jon-Paul; Biegalski, Michael D.; Christen, Hans M.

    2014-02-14

    Smooth, commensurate alloys of ?111?-oriented Mg{sub 0.52}Ca{sub 0.48}O (MCO) thin films are demonstrated on Ga-polar, c+ [0001]-oriented GaN by surfactant-assisted molecular beam epitaxy and pulsed laser deposition. These are unique examples of coherent cubic oxide|nitride interfaces with structural and morphological perfection. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100× reduction in leakage current density for the surfactant-assisted samples. HAADF-STEM images of the MCO|GaN interface show commensurate alignment of atomic planes with minimal defects due to lattice mismatch. STEM and DFT calculations show that GaN c/2 steps create incoherent boundaries in MCO over layers which manifest as two in-plane rotations and determine consequently the density of structural defects in otherwise coherent MCO. This new understanding of interfacial steps between HCP and FCC crystals identifies the steps needed to create globally defect-free heterostructures.

  11. In vitro bio-functionality of gallium nitride sensors for radiation biophysics

    SciTech Connect (OSTI)

    Hofstetter, Markus; Howgate, John; Schmid, Martin; Schoell, Sebastian; Sachsenhauser, Matthias; Adiguezel, Denis; Stutzmann, Martin; Sharp, Ian D.; Thalhammer, Stefan

    2012-07-27

    Highlights: Black-Right-Pointing-Pointer Gallium nitride based sensors show promising characteristics to monitor cellular parameters. Black-Right-Pointing-Pointer Cell growth experiments reveal excellent biocompatibiltiy of the host GaN material. Black-Right-Pointing-Pointer We present a biofunctionality assay using ionizing radiation. Black-Right-Pointing-Pointer DNA repair is utilized to evaluate material induced alterations in the cellular behavior. Black-Right-Pointing-Pointer GaN shows no bio-functional influence on the cellular environment. -- Abstract: There is an increasing interest in the integration of hybrid bio-semiconductor systems for the non-invasive evaluation of physiological parameters. High quality gallium nitride and its alloys show promising characteristics to monitor cellular parameters. Nevertheless, such applications not only request appropriate sensing capabilities but also the biocompatibility and especially the biofunctionality of materials. Here we show extensive biocompatibility studies of gallium nitride and, for the first time, a biofunctionality assay using ionizing radiation. Analytical sensor devices are used in medical settings, as well as for cell- and tissue engineering. Within these fields, semiconductor devices have increasingly been applied for online biosensing on a cellular and tissue level. Integration of advanced materials such as gallium nitride into these systems has the potential to increase the range of applicability for a multitude of test devices and greatly enhance sensitivity and functionality. However, for such applications it is necessary to optimize cell-surface interactions and to verify the biocompatibility of the semiconductor. In this work, we present studies of mouse fibroblast cell activity grown on gallium nitride surfaces after applying external noxa. Cell-semiconductor hybrids were irradiated with X-rays at air kerma doses up to 250 mGy and the DNA repair dynamics, cell proliferation, and cell growth dynamics of adherent cells were compared to control samples. The impact of ionizing radiation on DNA, along with the associated cellular repair mechanisms, is well characterized and serves as a reference tool for evaluation of substrate effects. The results indicate that gallium nitride does not require specific surface treatments to ensure biocompatibility and suggest that cell signaling is not affected by micro-environmental alterations arising from gallium nitride-cell interactions. The observation that gallium nitride provides no bio-functional influence on the cellular environment confirms that this material is well suited for future biosensing applications without the need for additional chemical surface modification.

  12. Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting

    E-Print Network [OSTI]

    Rogers, John A.

    -state lighting Hoon-sik Kima,1 , Eric Bruecknerb,1 , Jizhou Songc,1 , Yuhang Lid,e , Seok Kima , Chaofeng Lud with advanced, blue indium gallium nitride light emitting diodes (LEDs) lead to their potential as replacements this materials technology into light- ing modules that manage light conversion, extraction, and distri- bution

  13. Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices

    SciTech Connect (OSTI)

    Patibandla, Nag; Agrawal, Vivek

    2012-12-01

    Over the course of this program, Applied Materials, Inc., with generous support from the United States Department of Energy, developed a world-class three chamber III-Nitride epi cluster tool for low-cost, high volume GaN growth for the solid state lighting industry. One of the major achievements of the program was to design, build, and demonstrate the world’s largest wafer capacity HVPE chamber suitable for repeatable high volume III-Nitride template and device manufacturing. Applied Materials’ experience in developing deposition chambers for the silicon chip industry over many decades resulted in many orders of magnitude reductions in the price of transistors. That experience and understanding was used in developing this GaN epi deposition tool. The multi-chamber approach, which continues to be unique in the ability of the each chamber to deposit a section of the full device structure, unlike other cluster tools, allows for extreme flexibility in the manufacturing process. This robust architecture is suitable for not just the LED industry, but GaN power devices as well, both horizontal and vertical designs. The new HVPE technology developed allows GaN to be grown at a rate unheard of with MOCVD, up to 20x the typical MOCVD rates of 3{micro}m per hour, with bulk crystal quality better than the highest-quality commercial GaN films grown by MOCVD at a much cheaper overall cost. This is a unique development as the HVPE process has been known for decades, but never successfully commercially developed for high volume manufacturing. This research shows the potential of the first commercial-grade HVPE chamber, an elusive goal for III-V researchers and those wanting to capitalize on the promise of HVPE. Additionally, in the course of this program, Applied Materials built two MOCVD chambers, in addition to the HVPE chamber, and a robot that moves wafers between them. The MOCVD chambers demonstrated industry-leading wavelength yield for GaN based LED wafers and industry-leading uptime enabled in part by a novel in-situ cleaning process developed in this program.

  14. High Quality, Low Cost Bulk Gallium Nitride Substrates Grown...

    Broader source: Energy.gov (indexed) [DOE]

    Project deliverables Reproducible monocrystalline growth process with sustainable film growth rate of at least 0.5mmhr scalable to >100mm substrate diameter and film...

  15. High-Quality, Low-Cost Bulk Gallium Nitride Substrates

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    could accelerate the adoption of energy-efficient GaN-based lighting and high-voltage power switching devices, ignite new market applications, and reduce U.S. power...

  16. Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:Financing Tool Fits the BillDepartment ofEnergyJoe25,

  17. GALLIUM NITRIDE INTEGRATED GAS/TEMPERATURE SENSORS FOR FUEL CELL SYSTEM MONITORING FOR HYDROGEN AND CARBON MONOXIDE

    E-Print Network [OSTI]

    GALLIUM NITRIDE INTEGRATED GAS/TEMPERATURE SENSORS FOR FUEL CELL SYSTEM MONITORING FOR HYDROGEN on field effect devices using catalytic metal gates on silicon carbide substrates has been reviewed (Spetz) and prototype silicon carbide (SiC) FET based sensors show enhanced sensitivity at high temperature

  18. Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide A. J. Kerr, E. Chagarov, S. Gu, T. Kaufman-Osborn, S. Madisetti, J. Wu, P. M. Asbeck, S. Oktyabrsky, and A. C.

    E-Print Network [OSTI]

    Kummel, Andrew C.

    Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide A. J. Kerr, E of plasma enhanced atomic layer deposited dielectrics on Ga- and N- face gallium nitride J. Appl. Phys. 116, 123702 (2014); 10.1063/1.4895985 Atomic layer deposited passivation layers for superlattice

  19. Atomic layer structure of manganese atoms on wurtzite gallium nitride Abhijit Chinchore, Kangkang Wang, Wenzhi Lin, Jeongihm Pak, and Arthur R. Smitha

    E-Print Network [OSTI]

    This surface forms the starting point for Mn deposition. The Mn atomic layer was prepared by depositing MnAtomic layer structure of manganese atoms on wurtzite gallium nitride ,,0001Ż... Abhijit Chinchore stage of growth. Certainly, a thin well-ordered layer of Mn atoms on GaN could be of great interest

  20. Surface Preparation of Gallium Nitride for Atomic Layer Deposition of Aluminum Oxide /

    E-Print Network [OSTI]

    Kerr, Amanda J.

    2014-01-01

    Nitride for Atomic Layer Deposition of Aluminum Oxide AForce Microscopy Atomic Layer Deposition Capacitance-VoltageSurfaces for Atomic Layer Deposition of Aluminum Oxide” x

  1. Radiation tolerance of piezoelectric bulk single-crystal aluminum nitride

    SciTech Connect (OSTI)

    David A. Parks; Bernhard R. Tittmann

    2014-07-01

    For practical use in harsh radiation environments, we pose selection criteria for piezoelectric materials for nondestructive evaluation (NDE) and material characterization. Using these criteria, piezoelectric aluminum nitride is shown to be an excellent candidate. The results of tests on an aluminumnitride-based transducer operating in a nuclear reactor are also presented. We demonstrate the tolerance of single-crystal piezoelectric aluminum nitride after fast and thermal neutron fluences of 1.85 × 1018 neutron/cm2 and 5.8 × 1018 neutron/cm2, respectively, and a gamma dose of 26.8 MGy. The radiation hardness of AlN is most evident from the unaltered piezoelectric coefficient d33, which measured 5.5 pC/N after a fast and thermal neutron exposure in a nuclear reactor core for over 120 MWh, in agreement with the published literature value. The results offer potential for improving reactor safety and furthering the understanding of radiation effects on materials by enabling structural health monitoring and NDE in spite of the high levels of radiation and high temperatures, which are known to destroy typical commercial ultrasonic transducers.

  2. High Quality, Low Cost Bulk Gallium Nitride Substrates Grown by the Electrochemical Solution Growth Method

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergyTher i nA Guide to TappingWORK BREAKDOWNEnergy howBuilding America TopofSeacrist,

  3. High-Quality, Low-Cost Bulk Gallium Nitride Substrates | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,ExecutiveFinancing

  4. GALLIUM--2001 29.1 By Deborah A. Kramer

    E-Print Network [OSTI]

    GALLIUM--2001 29.1 GALLIUM By Deborah A. Kramer Domestic survey data and tables were prepared, a significant consumer of gallium arsenide (GaAs)-based devices. As the gallium demand declined during 2001 capacity expansions, very few additional expansions were announced in 2001. Because gallium nitride (Ga

  5. Growth of gallium nitride films via the innovative technique of atomic-layer epitaxy. Annual progress report, 1 June 1987-31 May 1988

    SciTech Connect (OSTI)

    Davis, R.F.; Paisley, M.J.; Sitar, Z.

    1988-06-01

    Gallium nitride (GaN) is a wide-bandgap (3.45 eV at 300K) III-V compound semiconductor. The large direct bandgap and high electron-drift velocity of GaN are important properties in the performance of short-wavelength optical devices and high-power microwave devices. Immediate applications that would be greatly enhanced by the availability of GaN and/or Al/sub x/Ga/sub 1-x/N devices include threat warning systems (based on the ultraviolet (UV) emission from the exhaust plumes of missiles) and radar systems (which require high-power microwave generation). Important future applications for devices produced from these materials include blue and ultraviolet semiconductor lasers, blue-light-emitting diodes (LEDs) and high temperature electronic devices. This report discusses this material.

  6. IIl-nitride nanowires and heterostructures : growth and optical properties on nanoscale

    E-Print Network [OSTI]

    Zhou, Xiang, Ph. D. Massachusetts Institute of Technology

    2014-01-01

    Gallium nitride (GaN) and indium gallium nitride (InGaN) nanowires promise potential for further improving the electricity-to-light energy conversion efficiencies in light emitting diodes due to strain relaxation, reduced ...

  7. OXIDE / LPCVD NITRIDE STACKS ON SILICON: THE EFFECTS OF HIGH TEMPERATURE TREATMENTS ON BULK LIFETIME AND ON SURFACE PASSIVATION.

    E-Print Network [OSTI]

    for Sustainable Energy Systems, Engineering Department, The Australian National University, Acton 0200, Australia. ABSTRACT: Silicon dioxide / silicon nitride stacks are potentially useful for solar cell applications due significantly increased process flexibility and hence the realisation of novel cell structures. We used LPCVD

  8. Superconducting structure with layers of niobium nitride and aluminum nitride

    DOE Patents [OSTI]

    Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

    1989-07-04

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs.

  9. Superconducting structure with layers of niobium nitride and aluminum nitride

    DOE Patents [OSTI]

    Murduck, James M. (Lisle, IL); Lepetre, Yves J. (Lauris, FR); Schuller, Ivan K. (Woodridge, IL); Ketterson, John B. (Evanston, IL)

    1989-01-01

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources.

  10. Electronic properties of gallium nitride nanowires

    E-Print Network [OSTI]

    Yoon, Joonah

    2008-01-01

    This thesis presents a systematic study of the electrical transport in GaN nanowires. Particularly, the effect of the surrounding dielectric on the conductivity of GaN nanowires is experimentally shown for the first time. ...

  11. Efficient wireless charging with gallium nitride FETs

    E-Print Network [OSTI]

    Yeh, Theresa (Theresa I.)

    2014-01-01

    Though wireless charging is more convenient than traditional wired charging methods, it is currently less efficient. This not only wastes power but can also result in a longer charging time. Improving the efficiency of ...

  12. Growth process for gallium nitride porous nanorods

    DOE Patents [OSTI]

    Wildeson, Isaac Harshman; Sands, Timothy David

    2015-03-24

    A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiN.sub.x on the GaN film, etching a growth opening through the SiN.sub.x and into the GaN film, growing a GaN nanorod through the growth opening, the nanorod having a nanopore running substantially through its centerline. Focused ion beam etching can be used. The growing can be done using organometallic vapor phase epitaxy. The nanopore diameter can be controlled using the growth opening diameter or the growing step duration. The GaN nanorods can be removed from the substrate. The SiN.sub.x layer can be removed after the growing step. A SiO.sub.x template can be formed on the GaN film and the GaN can be grown to cover the SiO.sub.x template before depositing SiN.sub.x on the GaN film. The SiO.sub.x template can be removed after growing the nanorods.

  13. Electron transport in the III-V nitride alloys

    SciTech Connect (OSTI)

    Foutz, B.E.; O'Leary, S.K.; Shur, M.S.; Eastman, L.F.

    1999-07-01

    The authors study electron transport in the alloys of aluminum nitride and gallium nitride and alloys of indium nitride and gallium nitride. In particular, employing Monte Carlo simulations they determine the velocity-field characteristics associated with these alloys for various alloy compositions. They also determine the dependence of the low-field mobility on the alloy composition. They find that while the low-field mobility is a strong function of the alloy composition, the peak and saturation drift velocities exhibit a more mild dependence. Transient electron transport is also considered. They find that the velocity overshoot characteristic is a strong function of the alloy composition. The device implications of these results are discussed.

  14. Copper Indium Gallium Diselenide

    Broader source: Energy.gov [DOE]

    DOE supports innovative research focused on overcoming the current technological and commercial barreirs for copper indium gallium diselenide [Cu(InxGa1-x)Se2], or CIGS, solar cells. A list of...

  15. This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

    DOE Patents [OSTI]

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  16. Optical properties of bulk semiconductors and graphene/boron-nitride: The Bethe-Salpeter equation with derivative discontinuity-corrected DFT energies

    E-Print Network [OSTI]

    Yan, Jun; Thygesen, Kristian S; 10.1103/PhysRevB.86.045208

    2012-01-01

    We present an efficient implementation of the Bethe-Salpeter equation (BSE) for optical properties of materials in the projector augmented wave method GPAW. Single-particle energies and wave functions are obtained from the GLLBSC functional which explicitly includes the derivative discontinuity, is computationally inexpensive, and yields excellent fundamental gaps. Electron-hole interactions are included through the BSE using the statically screened interaction evaluated in the random phase approximation. For a representative set of semiconductors and insulators we find excellent agreement with experiments for the dielectric functions, onset of absorption, and lowest excitonic features. For the two-dimensional systems of graphene and hexagonal boron-nitride (h-BN) we find good agreement with previous many-body calculations. For the graphene/h-BN interface, we find that the fundamental and optical gaps of the h-BN layer are reduced by 2.0 eV and 0.7 eV, respectively, compared to freestanding h-BN. This reducti...

  17. The Hardest Superconducting Metal Nitride

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Shanmin; Antonio, Daniel; Yu, Xiaohui; Zhang, Jianzhong; Cornelius, Andrew L.; He, Duanwei; Zhao, Yusheng

    2015-09-03

    Transition–metal (TM) nitrides are a class of compounds with a wide range of properties and applications. Hard superconducting nitrides are of particular interest for electronic applications under working conditions such as coating and high stress (e.g., electromechanical systems). However, most of the known TM nitrides crystallize in the rock–salt structure, a structure that is unfavorable to resist shear strain, and they exhibit relatively low indentation hardness, typically in the range of 10–20?GPa. Here, we report high–pressure synthesis of hexagonal ?–MoN and cubic ?–MoN through an ion–exchange reaction at 3.5?GPa. The final products are in the bulk form with crystallite sizesmore »of 50 – 80??m. Based on indentation testing on single crystals, hexagonal ?–MoN exhibits excellent hardness of ~30?GPa, which is 30% higher than cubic ?–MoN (~23?GPa) and is so far the hardest among the known metal nitrides. The hardness enhancement in hexagonal phase is attributed to extended covalently bonded Mo–N network than that in cubic phase. The measured superconducting transition temperatures for ?–MoN and cubic ?–MoN are 13.8 and 5.5?K, respectively, in good agreement with previous measurements.« less

  18. The Hardest Superconducting Metal Nitride

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Shanmin; Antonio, Daniel; Yu, Xiaohui; Zhang, Jianzhong; Cornelius, Andrew L.; He, Duanwei; Zhao, Yusheng

    2015-09-03

    Transition–metal (TM) nitrides are a class of compounds with a wide range of properties and applications. Hard superconducting nitrides are of particular interest for electronic applications under working conditions such as coating and high stress (e.g., electromechanical systems). However, most of the known TM nitrides crystallize in the rock–salt structure, a structure that is unfavorable to resist shear strain, and they exhibit relatively low indentation hardness, typically in the range of 10–20 GPa. Here, we report high–pressure synthesis of hexagonal ?–MoN and cubic ?–MoN through an ion–exchange reaction at 3.5 GPa. The final products are in the bulk form withmore »crystallite sizes of 50 – 80 ?m. Based on indentation testing on single crystals, hexagonal ?–MoN exhibits excellent hardness of ~30 GPa, which is 30% higher than cubic ?–MoN (~23 GPa) and is so far the hardest among the known metal nitrides. The hardness enhancement in hexagonal phase is attributed to extended covalently bonded Mo–N network than that in cubic phase. The measured superconducting transition temperatures for ?–MoN and cubic ?–MoN are 13.8 and 5.5 K, respectively, in good agreement with previous measurements.« less

  19. Ultra-low threshold Gallium Nitride photonic crystal nanobeam laser

    E-Print Network [OSTI]

    Niu, Nan; Woolf, Alexander; Wang, Danquing; Zhu, Tongtong; Quan, Qimin; Oliver, Rachel A.; Hu, Evelyn L.

    2015-06-10

    to achieve lasing in the QW structures, heating of the nanobeam structures and effects such as free carrier absorption may explain the lower percentage of successful lasing in the QW devices. For 5 fQW nanobeams that were analyzed in detail, the lasing... with excellent performance. Because of their compact size and low thresholds, these devices are excellent candidates for efficient, on-chip optical sources in the blue portion of the spectrum. Corresponding Author *email: nanniu...

  20. Electrochemical Solution Growth: Gallium Nitride Crystal Growth - Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submitKansas Nuclear ProfileMultiferroic 2015ProgramWoodwardand

  1. Nitride fuel performance 

    E-Print Network [OSTI]

    Reynaud, Sylvie Marie Aurel?ie

    2002-01-01

    The purpose of this work was to assess the potential of nitride fuels in the current context of the nuclear industry. Nitride fuels systems have indeed been for the past decade the subject of new interest from the international community...

  2. Potential effects of gallium on cladding materials

    SciTech Connect (OSTI)

    Wilson, D.F.; Beahm, E.C.; Besmann, T.M.; DeVan, J.H.; DiStefano, J.R.; Gat, U.; Greene, S.R.; Rittenhouse, P.L.; Worley, B.A.

    1997-10-01

    This paper identifies and examines issues concerning the incorporation of gallium in weapons derived plutonium in light water reactor (LWR) MOX fuels. Particular attention is given to the more likely effects of the gallium on the behavior of the cladding material. The chemistry of weapons grade (WG) MOX, including possible consequences of gallium within plutonium agglomerates, was assessed. Based on the calculated oxidation potentials of MOX fuel, the effect that gallium may have on reactions involving fission products and possible impact on cladding performance were postulated. Gallium transport mechanisms are discussed. With an understanding of oxidation potentials and assumptions of mechanisms for gallium transport, possible effects of gallium on corrosion of cladding were evaluated. Potential and unresolved issues and suggested research and development (R and D) required to provide missing information are presented.

  3. Synthesis, characterization, and biotemplated assembly of indium nitride and indium gallium nitride nanoparticles

    E-Print Network [OSTI]

    Hsieh, Jennifer Chia-Jen

    2010-01-01

    A low-temperature, ambient pressure solution synthesis of colloidal InN nanoparticles is presented. This synthesis utilizes a previously dismissed precursor and results in individual, non-aggregated nanoparticles with ...

  4. Hard superconducting nitrides Xiao-Jia Chen*, Viktor V. Struzhkin*, Zhigang Wu*, Maddury Somayazulu

    E-Print Network [OSTI]

    Wu, Zhigang

    Hard superconducting nitrides Xiao-Jia Chen*, Viktor V. Struzhkin*, Zhigang Wu*, Maddury Somayazulu, and hardness of selected superconducting transition-metal nitrides reveals inter- esting correlations among with the neutron scattering data. The cubic -NbN superconducting phase possesses a bulk modulus of 348 GPa

  5. Synthesis and characterization of visible emission from rare-earth doped aluminum nitride, gallium nitride and gallium aluminum nitride powders and thin films

    E-Print Network [OSTI]

    Tao, Jonathan Huai-Tse

    2010-01-01

    Development of White LED Based PV Lighting Systems," Solarstate Lighting: Failure Analysis of White LEDs," J. Cryst.scale indicator lighting, to using green LEDs for traffic

  6. Synthesis and characterization of visible emission from rare-earth doped aluminum nitride, gallium nitride and gallium aluminum nitride powders and thin films

    E-Print Network [OSTI]

    Tao, Jonathan Huai-Tse

    2010-01-01

    Converted White-Light-Emitting Diodes," Jap. J. Appl.in Packaging High Power Light Emitting Diode Arrays," Appl.doped III-N Light-Emitting Diodes," Appl. Phys. Lett. , 84 (

  7. Boron nitride nanotubes

    DOE Patents [OSTI]

    Smith, Michael W. (Newport News, VA); Jordan, Kevin (Newport News, VA); Park, Cheol (Yorktown, VA)

    2012-06-06

    Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

  8. Charge decay characteristics of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures and extraction of the nitride

    E-Print Network [OSTI]

    Lee, Jong Duk

    , respectively. T­B is the time constant associated with trap-to-band tunneling of an electron,10 T­T is the time constant associated with trap-to-trap tunneling of an electron, B­T is the time constant associated bulk electron trapping rates for silicon nitrides are 102 ­105 times larger than deposited oxides

  9. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect (OSTI)

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  10. Generator for gallium-68 and compositions obtained therefrom

    DOE Patents [OSTI]

    Neirinckx, Rudi D. (Medfield, MA); Davis, Michael A. (Westwood, MA)

    1981-01-01

    A generator for obtaining radioactive gallium-68 from germanium-68 bound in a resin containing unsubstituted phenolic hydroxyl groups. The germanium-68 is loaded into the resin from an aqueous solution of the germanium-68. A physiologically acceptable solution of gallium-68 having an activity of 0.1 to 50 millicuries per milliliter of gallium-68 solution is obtained. The solution is obtained from the bound germanium-68 which forms gallium-68 in situ by eluting the column with a hydrochloric acid solution to form an acidic solution of gallium-68. The acidic solution of gallium-68 can be neutralized.

  11. Cubic nitride templates

    DOE Patents [OSTI]

    Burrell, Anthony K; McCleskey, Thomas Mark; Jia, Quanxi; Mueller, Alexander H; Luo, Hongmei

    2013-04-30

    A polymer-assisted deposition process for deposition of epitaxial cubic metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be used as templates for the development of high quality cubic GaN based electronic devices.

  12. Nitride semiconductor Surface and interface characterization and device design

    E-Print Network [OSTI]

    Zhang, Hongtao

    2006-01-01

    piezoelectric polarization effects in nitride heterostructures," in III-V Nitride Semiconductors: Applications

  13. High-Efficiency Nitride-Based Photonic Crystal Light Sources

    Broader source: Energy.gov [DOE]

    The University of California Santa Barbara (UCSB) is maximizing the efficiency of a white LED by enhancing the external quantum efficiency using photonic crystals to extract light that would normally be confined in a conventional structure. Ultimate efficiency can only be achieved by looking at the internal structure of light. To do this, UCSB is focusing on maximizing the light extraction efficiency and total light output from light engines driven by Gallium Nitride (GaN)-based LEDs. The challenge is to engineer large overlap (interaction) between modes and photonic crystals. The project is focused on achieving high extraction efficiency in LEDs, controlled directionality of emitted light, integrated design of vertical device structure, and nanoscale patterning of lateral structure.

  14. Sandia Energy - III-Nitride Nanowires

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    III-Nitride Nanowires Home Energy Research EFRCs Solid-State Lighting Science EFRC III-Nitride Nanowires III-Nitride NanowiresTara Camacho-Lopez2015-03-25T21:58:18+00:00...

  15. Superplastic forging nitride ceramics

    DOE Patents [OSTI]

    Panda, Prakash C. (Ithaca, NY); Seydel, Edgar R. (Ithaca, NY); Raj, Rishi (Ithaca, NY)

    1988-03-22

    The invention relates to producing relatively flaw free silicon nitride ceramic shapes requiring little or no machining by superplastic forging This invention herein was made in part under Department of Energy Grant DE-AC01-84ER80167, creating certain rights in the United States Government. The invention was also made in part under New York State Science and Technology Grant SB1R 1985-10.

  16. High Efficiency m-plane LEDs on Low Defect Density Bulk GaN Substrates

    SciTech Connect (OSTI)

    David, Aurelien

    2012-10-15

    Solid-state lighting is a key technology for reduction of energy consumption in the US and worldwide. In principle, by replacing standard incandescent bulbs and other light sources with sources based on light-emitting diodes (LEDs), ultimate energy efficiency can be achieved. The efficiency of LEDs has improved tremendously over the past two decades, however further progress is required for solid- state lighting to reach its full potential. The ability of an LED at converting electricity to light is quantified by its internal quantum efficiency (IQE). The material of choice for visible LEDs is Gallium Nitride (GaN), which is at the basis of blue-emitting LEDs. A key factor limiting the performance of GaN LEDs is the so-called efficiency droop, whereby the IQE of the LED decreases significantly at high current density. Despite decades of research, efficiency droop remains a major issue. Since high-current operation is necessary for practical lighting applications, reducing droop is a major challenge for the scientific community and the LED industry. Our approach to solving the droop issue is the use of newly available low-defect-density bulk GaN non-polar substrates. In contrast to the standard foreign substrates (sapphire, silicon carbide, silicon) used in the industry, we have employed native bulk GaN substrates with very low defect density, thus ensuring exquisite material quality and high IQE. Whereas all commercial LEDs are grown along the c-plane crystal direction of GaN, we have used m-plane non-polar substrates; these drastically modify the physical properties of the LED and enable a reduction of droop. With this approach, we have demonstrated very high IQE performance and low droop. Our results focused on violet and blue LEDs. For these, we have demonstrated very high peak IQEs and current droops of 6% and 10% respectively (up to a high current density of 200A.cm-2). All these results were obtained under electrical operation. These high IQE and low droop values are in line with the program’s milestones. They demonstrate that bulk non-polar GaN substrates represent a disruptive technology for LED performance. Application of this technology to real-world products is feasible, provided that the cost of GaN substrates is compatible with the market’s requirement.

  17. Electrochemical nitridation of metal surfaces

    DOE Patents [OSTI]

    Wang, Heli; Turner, John A.

    2015-06-30

    Electrochemical nitridation of metals and the produced metals are disclosed. An exemplary method of electrochemical nitridation of metals comprises providing an electrochemical solution at low temperature. The method also comprises providing a three-electrode potentiostat system. The method also comprises stabilizing the three-electrode potentiostat system at open circuit potential. The method also comprises applying a cathodic potential to a metal.

  18. Novel ethylenediamine-gallium phosphate containing 6-fold coordinated gallium atoms with unusual four equatorial Ga–N bonds

    SciTech Connect (OSTI)

    Torre-Fernández, Laura [Departamentos de Química Física y Analítica y Química Orgánica e Inorgánica, Universidad de Oviedo-CINN, 33006 Oviedo (Spain); Espina, Aránzazu; Khainakov, Sergei A.; Amghouz, Zakariae [Servicios Científico Técnicos, Universidad de Oviedo, 33006 Oviedo (Spain); García, José R. [Departamentos de Química Física y Analítica y Química Orgánica e Inorgánica, Universidad de Oviedo-CINN, 33006 Oviedo (Spain); García-Granda, Santiago, E-mail: sgg@uniovi.es [Departamentos de Química Física y Analítica y Química Orgánica e Inorgánica, Universidad de Oviedo-CINN, 33006 Oviedo (Spain)

    2014-07-01

    A novel ethylenediamine-gallium phosphate, formulated as Ga(H{sub 2}NCH{sub 2}CH{sub 2}NH{sub 2}){sub 2}PO{sub 4}·2H{sub 2}O, was synthesized under hydrothermal conditions. The crystal structure, including hydrogen positions, was determined using single-crystal X-ray diffraction data (monoclinic, a=9.4886(3) Ĺ, b=6.0374(2) Ĺ, c=10.2874(3) Ĺ, and ?=104.226(3)°, space group Pc) and the bulk was characterized by chemical (Ga–P–C–H–N) and thermal analysis (TG–MS and DSC), including activation energy data of its thermo-oxidative degradation, powder X-ray diffraction (PXRD), solid-state nuclear magnetic resonance (SS-NMR) measurements, and transmission electron microscopy (TEM, SAED/NBD, and STEM BF-EDX). The crystal structure is built up of infinite zig-zag chains running along the c-axis, formed by vertex-shared (PO{sub 4}) and (GaO{sub 2}N{sub 4}) polyhedra. The new compound is characterized by unusual four equatorial Ga–N bonds coming from two nonequivalent ethylenediamine molecules and exhibits strong blue emission at 430 nm (?{sub ex}=350 nm) in the solid state at room temperature. - Graphical abstract: Single crystals of a new ethylenediamine-gallium phosphate, Ga(H{sub 2}NCH{sub 2}CH{sub 2}NH{sub 2}){sub 2}PO{sub 4}·2H{sub 2}O, were obtained and the structural features presented. This structure is one of the scarce examples of GaPO with Ga–N bonds reported. - Highlights: • A novel ethylenediamine-gallium phosphate was hydrothermally synthesized. • The new compound is characterized by unusual four equatorial Ga–N bonds. • Void-volume analysis shows cages and channels with sizes ideally suited to accommodate small molecules. • The new compound exhibits strong blue emission.

  19. Gallium hole traps in irradiated KTiOPO{sub 4}:Ga crystals

    SciTech Connect (OSTI)

    Grachev, V.; Meyer, M.; Malovichko, G.; Hunt, A. W.

    2014-12-07

    Nominally pure and gallium doped single crystals of potassium titanyl phosphate (KTiOPO{sub 4}) have been studied by Electron Paramagnetic Resonance at low temperatures before and after irradiation. Irradiation with 20?MeV electrons performed at room temperature and liquid nitrogen temperature caused an appearance of electrons and holes. Gallium impurities act as hole traps in KTiOPO{sub 4} creating Ga{sup 4+} centers. Two different Ga{sup 4+} centers were observed, Ga1 and Ga2. The Ga1 centers are dominant in Ga-doped samples. For the Ga1 center, a superhyperfine structure with one nucleus with nuclear spin ˝ was registered and attributed to the interaction of gallium electrons with a phosphorus nucleus or proton in its surrounding. In both Ga1 and Ga2 centers, Ga{sup 4+} ions substitute for Ti{sup 4+} ions, but with a preference to one of two electrically distinct crystallographic positions (site selective substitution). The Ga doping eliminates one of the shortcomings of KTP crystals—ionic conductivity of bulk crystals. However, this does not improve significantly the resistance of the crystals to electron and ?-radiation.

  20. Functionalized boron nitride nanotubes

    DOE Patents [OSTI]

    Sainsbury, Toby; Ikuno, Takashi; Zettl, Alexander K

    2014-04-22

    A plasma treatment has been used to modify the surface of BNNTs. In one example, the surface of the BNNT has been modified using ammonia plasma to include amine functional groups. Amine functionalization allows BNNTs to be soluble in chloroform, which had not been possible previously. Further functionalization of amine-functionalized BNNTs with thiol-terminated organic molecules has also been demonstrated. Gold nanoparticles have been self-assembled at the surface of both amine- and thiol-functionalized boron nitride Nanotubes (BNNTs) in solution. This approach constitutes a basis for the preparation of highly functionalized BNNTs and for their utilization as nanoscale templates for assembly and integration with other nanoscale materials.

  1. Cordierite silicon nitride filters

    SciTech Connect (OSTI)

    Sawyer, J.; Buchan, B. ); Duiven, R.; Berger, M. ); Cleveland, J.; Ferri, J. )

    1992-02-01

    The objective of this project was to develop a silicon nitride based crossflow filter. This report summarizes the findings and results of the project. The project was phased with Phase I consisting of filter material development and crossflow filter design. Phase II involved filter manufacturing, filter testing under simulated conditions and reporting the results. In Phase I, Cordierite Silicon Nitride (CSN) was developed and tested for permeability and strength. Target values for each of these parameters were established early in the program. The values were met by the material development effort in Phase I. The crossflow filter design effort proceeded by developing a macroscopic design based on required surface area and estimated stresses. Then the thermal and pressure stresses were estimated using finite element analysis. In Phase II of this program, the filter manufacturing technique was developed, and the manufactured filters were tested. The technique developed involved press-bonding extruded tiles to form a filter, producing a monolithic filter after sintering. Filters manufactured using this technique were tested at Acurex and at the Westinghouse Science and Technology Center. The filters did not delaminate during testing and operated and high collection efficiency and good cleanability. Further development in areas of sintering and filter design is recommended.

  2. Hard carbon nitride and method for preparing same

    DOE Patents [OSTI]

    Haller, Eugene E. (Berkeley, CA); Cohen, Marvin L. (Berkeley, CA); Hansen, William L. (Walnut Creek, CA)

    1992-01-01

    Novel crystalline .alpha. (silicon nitride-like)-carbon nitride and .beta. (silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate.

  3. Method for producing refractory nitrides

    DOE Patents [OSTI]

    Quinby, Thomas C. (Kingston, TN)

    1989-01-24

    A process for making fine, uniform metal nitride powders that can be hot pressed or sintered. A metal salt is placed in a solvent with Melamine and warmed until a metal-Melamine compound forms. The solution is cooled and the metal-Melamine precipitate is calcined at a temperature below 700.degree. C. to form the metal nitrides and to avoid formation of the metal oxide.

  4. Superplastic forging nitride ceramics

    DOE Patents [OSTI]

    Panda, P.C.; Seydel, E.R.; Raj, R.

    1988-03-22

    A process is disclosed for preparing silicon nitride ceramic parts which are relatively flaw free and which need little or no machining, said process comprising the steps of: (a) preparing a starting powder by wet or dry mixing ingredients comprising by weight from about 70% to about 99% silicon nitride, from about 1% to about 30% of liquid phase forming additive and from 1% to about 7% free silicon; (b) cold pressing to obtain a preform of green density ranging from about 30% to about 75% of theoretical density; (c) sintering at atmospheric pressure in a nitrogen atmosphere at a temperature ranging from about 1,400 C to about 2,200 C to obtain a density which ranges from about 50% to about 100% of theoretical density and which is higher than said preform green density, and (d) press forging workpiece resulting from step (c) by isothermally uniaxially pressing said workpiece in an open die without initial contact between said workpiece and die wall perpendicular to the direction of pressing and so that pressed workpiece does not contact die wall perpendicular to the direction of pressing, to substantially final shape in a nitrogen atmosphere utilizing a temperature within the range of from about 1,400 C to essentially 1,750 C and strain rate within the range of about 10[sup [minus]7] to about 10[sup [minus]1] seconds[sup [minus]1], the temperature and strain rate being such that surface cracks do not occur, said pressing being carried out to obtain a shear deformation greater than 30% whereby superplastic forging is effected.

  5. Laser photochemistry of gallium-containing compounds. [Trimethylgallium

    SciTech Connect (OSTI)

    Baughcum, S.L.; Oldenborg, R.C.

    1986-01-01

    The production of gas-phase gallium atoms in the photolysis of trimethylgallium has been investigated at 193 nm and at other laser wavelengths. Ground state (4 /sup 2/P/sup 0//sub 1/2) and metastable (4 /sup 2/P/sup 0//sub 3/2/) gallium atoms are detected using laser-induced fluorescence techniques. Our results indicate that gallium atoms continue to be produced at long times after the laser pulse. The observed dependence on photolysis laser fluence, trimethylgallium pressure, and buffer gas pressure are consistent with a mechanism in which highly excited gallium methyl radicals undergo unimolecular decomposition to produce gallium atoms. Since this process is observed to happen on the time scale of hundreds of microseconds, these results have important implications for studies of metal deposition and direct laser writing by laser photolysis of organometallic compounds. 31 refs., 5 figs.

  6. Commercialization of gallium nitride nanorod arrays on silicon for solid-state lighting

    E-Print Network [OSTI]

    Wee, Qixun

    2008-01-01

    One important component in energy usage is lighting, which is currently dominated by incandescent and fluorescent lamps. However, due to potentially higher efficiencies and thus higher energy savings, solid-state lighting ...

  7. Luminescence dynamics and waveguide applications of europium doped gallium nitride powder

    E-Print Network [OSTI]

    Lipson, Michal

    of obtaining a powder form of RE doped GaN involve a combustion reaction15 or an ammonolysis of freeze onto the Si substrate, obtained using a HeCd laser 325 nm . A pulsed N2 laser 337.1 nm with 4 ns pulse

  8. Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

    SciTech Connect (OSTI)

    Esposto, Michele; Krishnamoorthy, Sriram; Nath, Digbijoy N.; Bajaj, Sanyam; Hung, Ting-Hsiang; Rajan, Siddharth

    2011-09-26

    We report on our investigation of the electrical properties of metal/Al{sub 2}O{sub 3}/GaN metal-insulator-semiconductor capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing the capacitance-voltage characteristics of atomic layer deposited Al{sub 2}O{sub 3} films on GaN substrates. The conduction band offset at the Al{sub 2}O{sub 3}/GaN interface was calculated to be 2.13 eV, in agreement with theoretical predications. A non-zero field of 0.93 MV/cm in the oxide under flat-band conditions in the GaN was inferred, which we attribute to a fixed net positive charge density of magnitude 4.60 x 10{sup 12 }cm{sup -2} at the Al{sub 2}O{sub 3}/GaN interface. We provide hypotheses to explain the origin of this charge by analyzing the energy band line-up.

  9. Outphasing Control of Gallium Nitride based Very High Frequency Resonant Converters

    E-Print Network [OSTI]

    Madsen, Mickey P.

    In this paper an outphasing modulation control method suitable for line regulation of very high frequency resonant converters is described.

  10. Efficiency Optimization for a Power Factor Correction (PFC) Rectifier with Gallium Nitride

    E-Print Network [OSTI]

    Paderborn, Universität

    and utilized to identify the best design by numeric optimization of switching frequency, number of turns) and to increase the power density. Despite of the comparable low switching losses of GaN transistors circuit that achieves negative voltage at switch-off with a unipolar power supply is described in Section

  11. Sandia Energy - BES Web Highlight: Single-mode gallium nitride nanowire

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust, High-Throughput Analysis ofSample SULI ProgramPhysical Societylasers BES Web

  12. Process for making transition metal nitride whiskers

    DOE Patents [OSTI]

    Bamberger, C.E.

    1988-04-12

    A process for making metal nitrides, particularly titanium nitride whiskers, using a cyanide salt as a reducing agent for a metal compound in the presence of an alkali metal oxide. Sodium cyanide, various titanates and titanium oxide mixed with sodium oxide react to provide titanium nitride whiskers that can be used as reinforcement to ceramic composites. 1 fig., 1 tab.

  13. Investigation into nitrided spur gears

    SciTech Connect (OSTI)

    Yilbas, B.S.; Coban, A.; Nickel, J.; Sunar, M.; Sami, M.; Abdul Aleem, B.J. [King Fahd Univ. of Petroleum and Minerals, Dhahran (Saudi Arabia)

    1996-12-01

    The cold forging method has been widely used in industry to produce machine parts. In general, gears are produced by shaping or hobbing. One of the shaping techniques is precision forging, which has several advantages over hobbing. In the present study, cold forging of spur gears from Ti-6Al-4V material is introduced. To improve the surface properties of the resulting gears, plasma nitriding was carried out. Nuclear reaction analysis was carried out to obtain the nitrogen concentration, while the micro-PIXE technique was used to determine the elemental distribution in the matrix after forging and nitriding processes. Scanning electron microscopy and x-ray powder diffraction were used to investigate the metallurgical changes and formation of nitride components in the surface region. Microhardness and friction tests were carried out to measure the hardness depth profile and friction coefficient at the surface. Finally, scoring failure tests were conducted to determine the rotational speed at which the gears failed. Three distinct regions were obtained in the nitride region, and at the initial stages of the scoring tests, failure in surface roughness was observed in the vicinity of the tip of the gear tooth. This occurred at a particular rotational speed and work input.

  14. Reversible expansion of gallium-stabilized (delta)-plutonium

    SciTech Connect (OSTI)

    Wolfer, W G; Oudot, B; Baclet, N

    2006-02-27

    It is shown that the transient expansion of plutonium-gallium alloys observed both in the lattice parameter as well as in the dimension of a sample held at ambient temperature can be explained by assuming incipient precipitation of Pu{sub 3}Ga. However, this ordered {zeta}-phase is also subject to radiation-induced disordering. As a result, the gallium-stabilized {delta}-phase, being metastable at ambient temperature, is driven towards thermodynamic equilibrium by radiation-enhanced diffusion of gallium and at the same time reverted back to its metastable state by radiation-induced disordering. A steady state is reached in which only a modest fraction of the gallium present is arranged in ordered {zeta}-phase regions.

  15. Generator for ionic gallium-68 based on column chromatography

    DOE Patents [OSTI]

    Neirinckx, Rudi D. (Medfield, MA); Davis, Michael A. (Westwood, MA)

    1981-01-01

    A physiologically acceptable solution of gallium-68 fluorides, having an activity of 0.1 to 50 millicuries per milliliter of solution is provided. The solution is obtained from a generator comprising germanium-68 hexafluoride bound to a column of an anion exchange resin which forms gallium-68 in situ by eluting the column with an acid solution to form a solution containing .sup.68 Ga-fluorides. The solution then is neutralized prior to administration.

  16. Cavity optomechanics in gallium phosphide microdisks

    SciTech Connect (OSTI)

    Mitchell, Matthew; Barclay, Paul E.; Hryciw, Aaron C.

    2014-04-07

    We demonstrate gallium phosphide (GaP) microdisk optical cavities with intrinsic quality factors >2.8?×?10{sup 5} and mode volumes <10(?/n){sup 3}, and study their nonlinear and optomechanical properties. For optical intensities up to 8.0?×?10{sup 4} intracavity photons, we observe optical loss in the microcavity to decrease with increasing intensity, indicating that saturable absorption sites are present in the GaP material, and that two-photon absorption is not significant. We observe optomechanical coupling between optical modes of the microdisk around 1.5??m and several mechanical resonances, and measure an optical spring effect consistent with a theoretically predicted optomechanical coupling rate g{sub 0}/2??30?kHz for the fundamental mechanical radial breathing mode at 488?MHz.

  17. Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

    SciTech Connect (OSTI)

    Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.

    1990-12-01

    Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

  18. CX-010873: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Ammonothermal Bulk Gallium Nitride Crystal Growth for Energy Efficient Lightning and Power Electronics CX(s) Applied: B3.6 Date: 05/22/2013 Location(s): California Offices(s): Advanced Research Projects Agency-Energy

  19. Rotary bulk solids divider

    DOE Patents [OSTI]

    Maronde, Carl P. (McMurray, PA); Killmeyer, Jr., Richard P. (Pittsburgh, PA)

    1992-01-01

    An apparatus for the disbursement of a bulk solid sample comprising, a gravity hopper having a top open end and a bottom discharge end, a feeder positioned beneath the gravity hopper so as to receive a bulk solid sample flowing from the bottom discharge end, and a conveyor receiving the bulk solid sample from the feeder and rotating on an axis that allows the bulk solid sample to disperse the sample to a collection station.

  20. Design and Implementation of Silicon Nitride Valves for Heavy...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Implementation of Silicon Nitride Valves for Heavy Duty Diesel Engines Design and Implementation of Silicon Nitride Valves for Heavy Duty Diesel Engines Poster presentation at the...

  1. Boron nitride ablation studies in arc jet facilities (Conference...

    Office of Scientific and Technical Information (OSTI)

    Boron nitride ablation studies in arc jet facilities Citation Details In-Document Search Title: Boron nitride ablation studies in arc jet facilities You are accessing a document...

  2. High density hexagonal boron nitride prepared by hot isostatic pressing in refractory metal containers

    DOE Patents [OSTI]

    Hoenig, Clarence L. (Livermore, CA)

    1992-01-01

    Boron nitride powder with less than or equal to the oxygen content of starting powder (down to 0.5% or less) is hot isostatically pressed in a refractory metal container to produce hexagonal boron nitride with a bulk density greater than 2.0 g/cc. The refractory metal container is formed of tantalum, niobium, tungsten, molybdenum or alloys thereof in the form of a canister or alternatively plasma sprayed or chemical vapor deposited onto a powder compact. Hot isostatic pressing at 1800.degree. C. and 30 KSI (206.8 MPa) argon pressure for four hours produces a bulk density of 2.21 g/cc. Complex shapes can be made.

  3. Nanostructure, Chemistry and Crystallography of Iron Nitride...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Nanostructure, Chemistry and Crystallography of Iron Nitride Magnetic Materials by Ultra-High-Resolution Electron Microscopy and Related Methods Nanostructure, Chemistry and...

  4. Gallium based low-interaction anions

    DOE Patents [OSTI]

    King, Wayne A. (Santa Fe, NM); Kubas, Gregory J. (Santa Fe, NM)

    2000-01-01

    The present invention provides: a composition of the formula M.sup.+x (Ga(Y).sub.4.sup.-).sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; a composition of the formula (R).sub.x Q.sup.+ Ga(Y).sub.4.sup.- where Q is selected from the group consisting of carbon, nitrogen, sulfur, phosphorus and oxygen, each R is a ligand selected from the group consisting of alkyl, aryl, and hydrogen, x is an integer selected from the group consisting of 3 and 4 depending upon Q, and each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; an ionic polymerization catalyst composition including an active cationic portion and a gallium based weakly coordinating anion; and bridged anion species of the formula M.sup.+x.sub.y [X(Ga(Y.sub.3).sub.z ].sup.-y.sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, magnesium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, X is a bridging group between two gallium atoms, y is an integer selected from the group consisting 1 and 2, z is an integer of at least 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide.

  5. Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials

    DOE Patents [OSTI]

    Hogan, S.J.

    1983-03-13

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

  6. Method of preparation of uranium nitride

    DOE Patents [OSTI]

    Kiplinger, Jaqueline Loetsch; Thomson, Robert Kenneth James

    2013-07-09

    Method for producing terminal uranium nitride complexes comprising providing a suitable starting material comprising uranium; oxidizing the starting material with a suitable oxidant to produce one or more uranium(IV)-azide complexes; and, sufficiently irradiating the uranium(IV)-azide complexes to produce the terminal uranium nitride complexes.

  7. Hard carbon nitride and method for preparing same

    DOE Patents [OSTI]

    Haller, E.E.; Cohen, M.L.; Hansen, W.L.

    1992-05-05

    Novel crystalline [alpha](silicon nitride-like)-carbon nitride and [beta](silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate. 1 figure.

  8. Boron nitride ablation studies in arc jet facilities (Conference...

    Office of Scientific and Technical Information (OSTI)

    NITRIDES; NITROGEN COMPOUNDS; OPENINGS; PNICTIDES; SPACE VEHICLES 360205* -- Ceramics, Cermets, & Refractories-- Corrosion & Erosion; 320201 -- Energy Conservation,...

  9. First results from the Soviet-American Gallium Experiment

    SciTech Connect (OSTI)

    Abazov, A.I.; Abdurashitov, D.N.; Anosov, O.L.; Eroshkina, L.A.; Faizov, E.L.; Gavrin, V.N.; Kalikhov, A.V.; Knodel, T.V.; Knyshenko, I.I.; Kornoukhov, V.N.; Mezentseva, S.A.; Mirmov, I.N.; Ostrinsky, A.I.; Petukhov, V.V.; Pshukov, A.M.; Revzin, N.Y.; Shikhin, A.A.; Timofeyev, P.V.; Veretenkin, E.P.; Vermul, V.M.; Zakharov, Y.; Zatsepin, G.T.; Zhandarov, V.I. . Inst. Yadernykh Issledovanij); Bowl

    1990-01-01

    The Soviet-American Gallium Experiment is the first experiment able to measure the dominant flux of low energy p-p solar neutrinos. Four extractions made during January to May 1990 from 30 tons of gallium have been counted and indicate that the flux is consistent with 0 SNU and is less than 72 SNU (68% CL) and less than 138 SNU (95% CL). This is to be compared with the flux of 132 SNU predicted by the Standard Solar Model. 10 refs., 4 figs., 1 tab.

  10. Boron Nitride Nanoribbons Becomes Metallic

    SciTech Connect (OSTI)

    Huang, Jingsong [ORNL; Terrones Maldonado, Humberto [ORNL; Sumpter, Bobby G [ORNL; Lopez-Benzanilla, Alejandro [Oak Ridge National Laboratory (ORNL)

    2011-01-01

    Standard spin-polarized density functional theory calculations have been conducted to study the electronic structures and magnetic properties of O and S functionalized zigzag boron nitride nanoribbons (zBNNRs). Unlike the semiconducting and nonmagnetic H edge-terminated zBNNRs, the O edge-terminated zBNNRs have two energetically degenerate magnetic ground states with a ferrimagnetic character on the B edge, both of which are metallic. In contrast, the S edge-terminated zBNNRs are nonmagnetic albeit still metallic. An intriguing coexistence of two different Peierls-like distortions is observed for S edge-termination that manifests as a strong S dimerization at the B zigzag edge and a weak S trimerization at the N zigzag edge, dictated by the band fillings at the vicinity of the Fermi level. Nevertheless, metallicity is retained along the S wire on theNedge due to the partial filling of the band derived from the pz orbital of S. A second type of functionalization with O or S atoms embedded in the center of zBNNRs yields semiconducting features. Detailed examination of both types of functionalized zBNNRs reveals that the p orbitals on O or S play a crucial role in mediating the electronic structures of the ribbons.We suggest that O and S functionalization of zBNNRs may open new routes toward practical electronic devices based on boron nitride materials.

  11. Multifunctional bulk plasma source based on discharge with electron injection

    SciTech Connect (OSTI)

    Klimov, A. S.; Medovnik, A. V.; Tyunkov, A. V.; Savkin, K. P.; Shandrikov, M. V.; Vizir, A. V.

    2013-01-15

    A bulk plasma source, based on a high-current dc glow discharge with electron injection, is described. Electron injection and some special design features of the plasma arc emitter provide a plasma source with very long periods between maintenance down-times and a long overall lifetime. The source uses a sectioned sputter-electrode array with six individual sputter targets, each of which can be independently biased. This discharge assembly configuration provides multifunctional operation, including plasma generation from different gases (argon, nitrogen, oxygen, acetylene) and deposition of composite metal nitride and oxide coatings.

  12. Empirical modeling of uranium nitride fuels 

    E-Print Network [OSTI]

    Brozak, Daniel Edward

    1987-01-01

    of this work was to develop an irradiation performance data base for nitride fuels and to provide empirical modeling capabilities for fuel swelling and fission gas release in nitride fuels. The nitride fuels data base represents the most extensive effort... the formation of a empirical fit based upon consistent data. The forms of the recommended correlations for fuel swelling and fission gas release are shown on the following page; AV/V = a(Tb) (BUc)(FDd) (SDe) FGR = a(T )(BU )(FD ) where: AV/V FGR T BU FD...

  13. Design of Integrated III-Nitride/Non-III-Nitride Tandem Photovoltaic Devices

    SciTech Connect (OSTI)

    Toledo, N. G.; Friedman, D.J.; Farrell, R. M.; Perl, E. E.; Lin, C. T.; Bowers, J. E.; Speck, J. S.; Mishra, U. K.

    2012-03-01

    The integration of III-nitride and non-III-nitride materials for tandem solar cell applications can improve the efficiency of the photovoltaic device due to the added power contributed by the III-nitride top cell to that of high-efficiency multi-junction non-III-nitride solar cells if the device components are properly designed and optimized. The proposed tandem solar cell is comprised of a III-nitride top cell bonded to a non-III-nitride, series-constrained, multi-junction subcell. The top cell is electrically isolated, but optically coupled to the underlying subcell. The use of a III-nitride top cell is potentially beneficial when the top junction of a stand-alone non-III-nitride subcell generates more photocurrent than the limiting current of the non-III-nitride subcell. Light producing this excess current can either be redirected to the III-nitride top cell through high energy photon absorption, redirected to the lower junctions through layer thickness optimization, or a combination of both, resulting in improved total efficiency. When the non-III-nitride cell's top junction is the limiting junction, the minimum power conversion efficiency that the III-nitride top cell must contribute should compensate for the spectrum filtered from the multi-junction subcell for this design to be useful. As the III-nitride absorption edge wavelength, {lambda}{sub N}, increases, the performance of the multi-junction subcell decreases due to spectral filtering. In the most common spectra of interest (AM1.5G, AM1.5 D, and AM0), the technology to grow InGaN cells with {lambda}{sub N}<520 nm is found to be sufficient for III-nitride top cell applications. The external quantum efficiency performance, however, of state-of-the-art InGaN solar cells still needs to be improved. The effects of surface/interface reflections are also presented. The management of these reflection issues determines the feasibility of the integrated III-nitride/non-III-nitride design to improve overall cell efficiency.

  14. Discovery of Gallium, Germanium, Lutetium, and Hafnium Isotopes

    E-Print Network [OSTI]

    Gross, J L

    2011-01-01

    Currently, twenty-eight gallium, thirty-one germanium, thirty-five lutetium, and thirty-six hafnium isotopes have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented.

  15. Discovery of Gallium, Germanium, Lutetium, and Hafnium Isotopes

    E-Print Network [OSTI]

    J. L. Gross; M. Thoennessen

    2011-09-28

    Currently, twenty-eight gallium, thirty-one germanium, thirty-five lutetium, and thirty-six hafnium isotopes have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented.

  16. Aluminum Nitride Thin Films on Titanium for Piezoelectric MEMS Applications Seth Boeshore, Emily Parker, Vanni Lughi, Noel C. MacDonald

    E-Print Network [OSTI]

    MacDonald, Noel C.

    Aluminum Nitride Thin Films on Titanium for Piezoelectric MEMS Applications Seth Boeshore, Emily piezoelectric MEMS. Titanium is a new and attractive platform for MEMS because of its corrosion resistance with standard silicon MEMS processing and has found widespread use in film bulk acoustic resonators (FBARs

  17. Self- and zinc diffusion in gallium antimonide

    SciTech Connect (OSTI)

    Nicols, Samuel Piers

    2002-03-26

    The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT) [Dvorak, (2001)]. Many of the findings which will be reported here were previously published in three journal articles. Hartmut Bracht was the lead author on two articles on self-diffusion studies in GaSb [Bracht, (2001), (2000)], while this report's author was the lead author on Zn diffusion results [Nicols, (2001)]. Much of the information contained herein can be found in those articles, but a more detailed treatment is presented here.

  18. Method of nitriding refractory metal articles

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN); Holcombe, Cressie E. (Knoxville, TN); Dykes, Norman L. (Oak Ridge, TN); Omatete, Ogbemi O. (Lagos, NG); Young, Albert C. (Flushing, NY)

    1994-01-01

    A method of nitriding a refractory-nitride forming metal or metalloid articles and composite articles. A consolidated metal or metalloid article or composite is placed inside a microwave oven and nitrogen containing gas is introduced into the microwave oven. The metal or metalloid article or composite is heated to a temperature sufficient to react the metal or metalloid with the nitrogen by applying a microwave energy within the microwave oven. The metal or metalloid article or composite is maintained at that temperature for a period of time sufficient to convert the article of metal or metalloid or composite to an article or composite of refractory nitride. In addition, a method of applying a coating, such as a coating of an oxide, a carbide, or a carbo-nitride, to an article of metal or metalloid by microwave heating.

  19. Low temperature route to uranium nitride

    DOE Patents [OSTI]

    Burrell, Anthony K. (Los Alamos, NM); Sattelberger, Alfred P. (Darien, IL); Yeamans, Charles (Berkeley, CA); Hartmann, Thomas (Idaho Falls, ID); Silva, G. W. Chinthaka (Las Vegas, NV); Cerefice, Gary (Henderson, NV); Czerwinski, Kenneth R. (Henderson, NV)

    2009-09-01

    A method of preparing an actinide nitride fuel for nuclear reactors is provided. The method comprises the steps of a) providing at least one actinide oxide and optionally zirconium oxide; b) mixing the oxide with a source of hydrogen fluoride for a period of time and at a temperature sufficient to convert the oxide to a fluoride salt; c) heating the fluoride salt to remove water; d) heating the fluoride salt in a nitrogen atmosphere for a period of time and at a temperature sufficient to convert the fluorides to nitrides; and e) heating the nitrides under vacuum and/or inert atmosphere for a period of time sufficient to convert the nitrides to mononitrides.

  20. Silicon nitride having a high tensile strength

    DOE Patents [OSTI]

    Pujari, V.K.; Tracey, D.M.; Foley, M.R.; Paille, N.I.; Pelletier, P.J.; Sales, L.C.; Willkens, C.A.; Yeckley, R.L.

    1998-06-02

    A ceramic body is disclosed comprising at least about 80 w/o silicon nitride and having a mean tensile strength of at least about 800 MPa. 4 figs.

  1. Band anticrossing in dilute nitrides

    SciTech Connect (OSTI)

    Shan, W.; Yu, K.M.; Walukiewicz, W.; Wu, J.; Ager III, J.W.; Haller, E.E.

    2003-12-23

    Alloying III-V compounds with small amounts of nitrogen leads to dramatic reduction of the fundamental band-gap energy in the resulting dilute nitride alloys. The effect originates from an anti-crossing interaction between the extended conduction-band states and localized N states. The interaction splits the conduction band into two nonparabolic subbands. The downward shift of the lower conduction subband edge is responsible for the N-induced reduction of the fundamental band-gap energy. The changes in the conduction band structure result in significant increase in electron effective mass and decrease in the electron mobility, and lead to a large enhance of the maximum doping level in GaInNAs doped with group VI donors. In addition, a striking asymmetry in the electrical activation of group IV and group VI donors can be attributed to mutual passivation process through formation of the nearest neighbor group-IV donor nitrogen pairs.

  2. The Nitrogen-Nitride Anode.

    SciTech Connect (OSTI)

    Delnick, Frank M.

    2014-10-01

    Nitrogen gas N 2 can be reduced to nitride N -3 in molten LiCl-KCl eutectic salt electrolyte. However, the direct oxidation of N -3 back to N 2 is kinetically slow and only occurs at high overvoltage. The overvoltage for N -3 oxidation can be eliminated by coordinating the N -3 with BN to form the dinitridoborate (BN 2 -3 ) anion which forms a 1-D conjugated linear inorganic polymer with -Li-N-B-N- repeating units. This polymer precipitates out of solution as Li 3 BN 2 which becomes a metallic conductor upon delithiation. Li 3 BN 2 is oxidized to Li + + N 2 + BN at about the N 2 /N -3 redox potential with very little overvoltage. In this report we evaluate the N 2 /N -3 redox couple as a battery anode for energy storage.

  3. Vibronic fine structure in high-resolution x-ray absorption spectra from ion-bombarded boron nitride nanotubes

    SciTech Connect (OSTI)

    Petravic, Mladen; Peter, Robert; Varasanec, Marijana; Li Luhua; Chen Ying; Cowie, Bruce C. C.

    2013-05-15

    The authors have applied high-resolution near-edge x-ray absorption fine structure measurements around the nitrogen K-edge to study the effects of ion-bombardment on near-surface properties of boron nitride nanotubes. A notable difference has been observed between surface sensitive partial electron yield (PEY) and bulk sensitive total electron yield (TEY) fine-structure measurements. The authors assign the PEY fine structure to the coupling of excited molecular vibrational modes to electronic transitions in NO molecules trapped just below the surface. Oxidation resistance of the boron nitride nanotubes is significantly reduced by low energy ion bombardment, as broken B-N bonds are replaced by N-O bonds involving oxygen present in the surface region. In contrast to the PEY spectra, the bulk sensitive TEY measurements on as-grown samples do not exhibit any fine structure while the ion-bombarded samples show a clear vibronic signature of molecular nitrogen.

  4. Boron-Nitride Nanotubes Show Potential in Cancer Treatment |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Boron-Nitride Nanotubes Show Potential in Cancer Treatment NEWPORT NEWS, VA, April 26 - A new study has shown that adding boron-nitride nanotubes to the surface of cancer cells can...

  5. Method of manufacture of atomically thin boron nitride

    SciTech Connect (OSTI)

    Zettl, Alexander K

    2013-08-06

    The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.

  6. Silicon nitride zoneplates and packaging for extreme ultraviolet instruments

    E-Print Network [OSTI]

    Anderson, Erik H.

    2014-01-01

    nitride zoneplates and packaging for extreme ultravioletphase. IV. MECHANICAL PACKAGING WITH BALLS AND GROOVESoverall efficiency. Packaging using kinematic configurations

  7. Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO), Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

    1998-08-08

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

  8. Superconductive silicon nanowires using gallium beam lithography.

    SciTech Connect (OSTI)

    Henry, Michael David; Jarecki, Robert Leo,

    2014-01-01

    This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

  9. Silicon nitride ceramic having high fatigue life and high toughness

    DOE Patents [OSTI]

    Yeckley, Russell L. (Oakham, MA)

    1996-01-01

    A sintered silicon nitride ceramic comprising between about 0.6 mol % and about 3.2 mol % rare earth as rare earth oxide, and between about 85 w/o and about 95 w/o beta silicon nitride grains, wherein at least about 20% of the beta silicon nitride grains have a thickness of greater than about 1 micron.

  10. Influence of Microstructure and Temperature on the Interfacial Fracture Energy of Silicon Nitride/Boron Nitride Fibrous Monolithic Ceramics

    E-Print Network [OSTI]

    Trice, Rodney W.

    Influence of Microstructure and Temperature on the Interfacial Fracture Energy of Silicon Nitride and interfacial fracture energy of sili- con nitride/boron nitride fibrous monoliths, BN, were de- termined the fracture energy with increasing amounts of glass. Similar trends in the interfacial fracture energy

  11. DESIGN AND ANALYSIS OF AN INTEGRATED PULSE MODULATED S-BAND POWER AMPLIFIER IN GALLIUM NITRIDE PROCESS

    SciTech Connect (OSTI)

    STEVE SEDLOCK

    2012-04-04

    The design of power amplifiers in any semi-conductor process is not a trivia exercise and it is often encountered that the simulated solution is qualitatively different than the results obtained. Phenomena such as oscillation occurring either in-band or out of band and sometimes at subharmonic intervals, continuous spectrum noticed in some frequency bands, often referred to as chaos, and jumps and hysteresis effects can all be encountered and render a design useless. All of these problems might have been identified through a more rigorous approach to stability analysis. Designing for stability is probably the one area of amplifier design that receives the least amount of attention but incurs the most catastrophic of effects if it is not performed properly. Other parameters such as gain, power output, frequency response and even matching may suitable mitigation paths. But the lack of stability in an amplifier has no mitigating path. In addition to of loss of the design completely there are the increased production cycle costs, costs involved with investigating and resolving the problem and the costs involved with schedule slips or delays resulting from it. The Linville or Rollett stability criteria that many microwave engineers follow and rely exclusively on is not sufficient by itself to ensure a stable and robust design. It will be shown that the universal belief that unconditional stability is obtained through an analysis of the scattering matrix S to determine if 1 and |{Delta}{sub S}| < 1 is only part of the procedure and other tools must be used to validate the criteria. The research shown contributes to the state of the art by developing a more thorough stability design technique for designing amplifiers of any class, whether that be current mode or switch mode, than is currently undertaken with the goal of obtaining first pass design success.

  12. Journal of Crystal Growth 310 (2008) 579583 Red shift in the photoluminescence of indium gallium arsenide nitride

    E-Print Network [OSTI]

    Hicks, Robert F.

    2008-01-01

    in multi-junction solar cells, and in long-wavelength solid- state lasers and detectors [2­4]. Nonetheless

  13. The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

    SciTech Connect (OSTI)

    Yang, Tsung-Jui; Wu, Yuh-Renn; Shivaraman, Ravi; Speck, James S.

    2014-09-21

    In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

  14. Silicon-nitride and metal composite

    DOE Patents [OSTI]

    Landingham, Richard L. (Livermore, CA); Huffsmith, Sarah A. (Urbana, IL)

    1981-01-01

    A composite and a method for bonding the composite. The composite includes a ceramic portion of silicon nitride, a refractory metal portion and a layer of MoSi.sub.2 indirectly bonding the composite together. The method includes contacting the layer of MoSi.sub.2 with a surface of the silicon nitride and with a surface of the metal; heating the layer to a temperature below 1400.degree. C.; and, simultaneously with the heating, compressing the layer such that the contacting is with a pressure of at least 30 MPa. This composite overcomes useful life problems in the fabrication of parts for a helical expander for use in power generation.

  15. Two-photon photovoltaic effect in gallium arsenide Jeff Chiles,1

    E-Print Network [OSTI]

    Fathpour, Sasan

    Two-photon photovoltaic effect in gallium arsenide Jichi Ma,1 Jeff Chiles,1 Yagya D. Sharma,2 214669); published September 4, 2014 The two-photon photovoltaic effect is demonstrated in gallium; (230.0250) Optoelectronics; (040.5350) Photovoltaic; (130.4310) Nonlinear. http://dx.doi.org/10.1364/OL

  16. Preliminary survey report: control technology for gallium arsenide processing at Morgan Semiconductor Division, Garland, Texas

    SciTech Connect (OSTI)

    Lenihan, K.L.

    1987-03-01

    The report covers a walk through survey made of the Morgan Semiconductor Facility in Garland, Texas, to evaluate control technology for gallium-arsenide dust in the semiconductor industry. Engineering controls included the synthesis of gallium-arsenide outside the crystal pullers to reduce arsenic residues in the pullers, also reducing worker exposure to arsenic during cleaning of the crystal pullers.

  17. IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 2, APRIL 2012 123 Gallium Arsenide Solar Cell Absorption

    E-Print Network [OSTI]

    Grandidier, Jonathan

    the cost of a solar cell compared with first-generation solar cells, usually at the expense of efficiencyIEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 2, APRIL 2012 123 Gallium Arsenide Solar Cell Absorption flat gallium arsenide solar cell, we show that it is possible to modify the flow of light and enhance

  18. Gallium-rich reconstructions on GaAs(001) M. Pristovsek*; 1

    E-Print Network [OSTI]

    Schmidt, Wolf Gero

    - tion High-Energy Electron Diffraction. Annealing or dosing gallium above about 800 K invariably re- layer of gallium, it transforms into a (4 Â 6) reconstruction. The observed translational symmetries, and to contribute to their microscopic understanding. To this end we combine in-situ Reflection High-Energy Electron

  19. High-Efficiency Nitride-Based Solid-State Lighting

    SciTech Connect (OSTI)

    Paul T. Fini; Shuji Nakamura

    2005-07-30

    In this final technical progress report we summarize research accomplished during Department of Energy contract DE-FC26-01NT41203, entitled ''High-Efficiency Nitride-Based Solid-State Lighting''. Two teams, from the University of California at Santa Barbara (Principle Investigator: Dr. Shuji Nakamura) and the Lighting Research Center at Rensselaer Polytechnic Institute (led by Dr. N. Narendran), pursued the goals of this contract from thin film growth, characterization, and packaging/luminaire design standpoints. The UCSB team initially pursued the development of blue gallium nitride (GaN)-based vertical-cavity surface-emitting lasers, as well as ultraviolet GaN-based light emitting diodes (LEDs). In Year 2, the emphasis shifted to resonant-cavity light emitting diodes, also known as micro-cavity LEDs when extremely thin device cavities are fabricated. These devices have very directional emission and higher light extraction efficiency than conventional LEDs. Via the optimization of thin-film growth and refinement of device processing, we decreased the total cavity thickness to less than 1 {micro}m, such that micro-cavity effects were clearly observed and a light extraction efficiency of over 10% was reached. We also began the development of photonic crystals for increased light extraction, in particular for so-called ''guided modes'' which would otherwise propagate laterally in the device and be re-absorbed. Finally, we pursued the growth of smooth, high-quality nonpolar a-plane and m-plane GaN films, as well as blue light emitting diodes on these novel films. Initial nonpolar LEDs showed the expected behavior of negligible peak wavelength shift with increasing drive current. M-plane LEDs in particular show promise, as unpackaged devices had unsaturated optical output power of {approx} 3 mW at 200 mA drive current. The LRC's tasks were aimed at developing the subcomponents necessary for packaging UCSB's light emitting diodes, and packaging them to produce a white light fixture. During the third and final year of the project, the LRC team investigated alternate packaging methods for the white LED device to achieve at least 25 percent more luminous efficacy than traditional white LEDs; conducted optical ray-tracing analyses and human factors studies to determine the best form factor for the white light source under development, in terms of high luminous efficacy and greater acceptance by subjects; and developed a new die encapsulant using silicone-epoxy resins that showed less yellowing and slower degradation. At the conclusion of this project, the LRC demonstrated a new packaging method, called scattered photon extraction (SPE), that produced an average luminous flux and corresponding average efficacy of 90.7 lm and 36.3 lm/W, respectively, compared with 56.5 lm and 22.6 lm/W for a similar commercial white LED package. At low currents, the SPE package emitted white light with an efficacy of over 80 lm/W and had chromaticity values very close to the blackbody locus. The SPE package showed an overall improvement of 61% for this particular comparison, exceeding the LRC's third-year goal of 25% improvement.

  20. Anisotropic Hexagonal Boron Nitride Nanomaterials - Synthesis and Applications

    SciTech Connect (OSTI)

    Han,W.Q.

    2008-08-01

    Boron nitride (BN) is a synthetic binary compound located between III and V group elements in the Periodic Table. However, its properties, in terms of polymorphism and mechanical characteristics, are rather close to those of carbon compared with other III-V compounds, such as gallium nitride. BN crystallizes into a layered or a tetrahedrally linked structure, like those of graphite and diamond, respectively, depending on the conditions of its preparation, especially the pressure applied. Such correspondence between BN and carbon readily can be understood from their isoelectronic structures [1, 2]. On the other hand, in contrast to graphite, layered BN is transparent and is an insulator. This material has attracted great interest because, similar to carbon, it exists in various polymorphic forms exhibiting very different properties; however, these forms do not correspond strictly to those of carbon. Crystallographically, BN is classified into four polymorphic forms: Hexagonal BN (h-BN) (Figure 1(b)); rhombohedral BN (r-BN); cubic BN (c-BN); and wurtzite BN (w-BN). BN does not occur in nature. In 1842, Balmain [3] obtained BN as a reaction product between molten boric oxide and potassium cyanide under atmospheric pressure. Thereafter, many methods for its synthesis were reported. h-BN and r-BN are formed under ambient pressure. c-BN is synthesized from h-BN under high pressure at high temperature while w-BN is prepared from h-BN under high pressure at room temperature [1]. Each BN layer consists of stacks of hexagonal plate-like units of boron and nitrogen atoms linked by SP{sup 2} hybridized orbits and held together mainly by Van der Waals force (Fig 1(b)). The hexagonal polymorph has two-layered repeating units: AA'AA'... that differ from those in graphite: ABAB... (Figure 1(a)). Within the layers of h-BN there is coincidence between the same phases of the hexagons, although the boron atoms and nitrogen atoms are alternatively located along the c-axis. The rhombohedral system consists of three-layered units: ABCABC..., whose honeycomb layers are arranged in a shifted phase, like as those of graphite. Reflecting its weak interlayer bond, the h-BN can be cleaved easily along its layers, and hence, is widely used as a lubricant material. The material is stable up to a high temperature of 2300 C before decomposition sets in [2] does not fuse a nitrogen atmosphere of 1 atm, and thus, is applicable as a refractory material. Besides having such properties, similar to those of graphite, the material is transparent, and acts as a good electric insulator, especially at high temperatures (10{sup 6} {Omega}m at 1000 C) [1]. c-BN and w-BN are tetrahedrally linked BN. The former has a cubic sphalerite-type structure, and the latter has a hexagonal wurtzite-type structure. c-BN is the second hardest known material (the hardest is diamond), the so-called white diamond. It is used mainly for grinding and cutting industrial ferrous materials because it does not react with molten iron, nickel, and related alloys at high temperatures whereas diamond does [1]. It displays the second highest thermal conductivity (6-9 W/cm.deg) after diamond. This chapter focuses principally upon information about h-BN nanomaterials, mainly BN nanotubes (BNNTs), porous BN, mono- and few-layer-BN sheets. There are good reviews book chapters about c-BN in [1, 4-6].

  1. Intrinsic ferromagnetism in hexagonal boron nitride nanosheets

    SciTech Connect (OSTI)

    Si, M. S.; Gao, Daqiang E-mail: xueds@lzu.edu.cn; Yang, Dezheng; Peng, Yong; Zhang, Z. Y.; Xue, Desheng E-mail: xueds@lzu.edu.cn; Liu, Yushen; Deng, Xiaohui; Zhang, G. P.

    2014-05-28

    Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized ? states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstrate such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.

  2. Communications CVD Growth of Boron Nitride Nanotubes

    E-Print Network [OSTI]

    in dense thickets on and about nickel boride catalyst particles at 1100 °C. The BN nanotubes resemble thoseCommunications CVD Growth of Boron Nitride Nanotubes Oleg R. Lourie, Carolyn R. Jones, Bart M Manuscript Received May 9, 2000 We describe BN-nanotube growth by chemical vapor deposition (CVD) using

  3. Boron nitride solid state neutron detector

    DOE Patents [OSTI]

    Doty, F. Patrick

    2004-04-27

    The present invention describes an apparatus useful for detecting neutrons, and particularly for detecting thermal neutrons, while remaining insensitive to gamma radiation. Neutrons are detected by direct measurement of current pulses produced by an interaction of the neutrons with hexagonal pyrolytic boron nitride.

  4. Titanium nitride electrodes for thermoelectric generators

    DOE Patents [OSTI]

    Novak, Robert F. (Farmington Hills, MI); Schmatz, Duane J. (Dearborn Heights, MI); Hunt, Thomas K. (Ann Arbor, MI)

    1987-12-22

    The invention is directed to a composite article suitable for use in thermoelectric generators. The article comprises a thin film of titanium nitride as an electrode deposited onto solid electrolyte. The invention is also directed to the method of making same.

  5. Fabrication of a gated gallium arsenide heterostructure resonant tunneling diode 

    E-Print Network [OSTI]

    Kinard, William Brian

    1989-01-01

    , . ' 'CONTACT PAD' PLANAR I ZED POLYAM I DE RECTIFYI CONTACT N DBHS Pig. 2. f'utavvay vieiv of a gated gallium arsenide heterostructure resonant tunneling diode 1018 graded from 10 18 io" 10? (lightly doped) units=cm 8 ?graded from 10 to 18...FABRICATION OF A GATED GALLIL". tl ARSEXIDE HETEROSTRL CTL RF. RESONANT TF'XXELI'XG DIODE A Thesis bt ttrILLIAAI BRIA'. s KI'iARD Subnut ted to the Office of Graduate Studies of Texas AE;M Eniverstty tn partial fulfillment of the requirements...

  6. High-Yield Synthesis of Stoichiometric Boron Nitride Nanostructures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Nocua, José E.; Piazza, Fabrice; Weiner, Brad R.; Morell, Gerardo

    2009-01-01

    Boron nitride (BN) nanostructures are structural analogues of carbon nanostructures but have completely different bonding character and structural defects. They are chemically inert, electrically insulating, and potentially important in mechanical applications that include the strengthening of light structural materials. These applications require the reliable production of bulk amounts of pure BN nanostructures in order to be able to reinforce large quantities of structural materials, hence the need for the development of high-yield synthesis methods of pure BN nanostructures. Using borazine ( B 3 N 3 H 6 ) asmore »chemical precursor and the hot-filament chemical vapor deposition (HFCVD) technique, pure BN nanostructures with cross-sectional sizes ranging between 20 and 50?nm were obtained, including nanoparticles and nanofibers. Their crystalline structure was characterized by (XRD), their morphology and nanostructure was examined by (SEM) and (TEM), while their chemical composition was studied by (EDS), (FTIR), (EELS), and (XPS). Taken altogether, the results indicate that all the material obtained is stoichiometric nanostructured BN with hexagonal and rhombohedral crystalline structure. « less

  7. Low-loss binder for hot pressing boron nitride

    DOE Patents [OSTI]

    Maya, Leon (Oak Ridge, TN)

    1991-01-01

    Borazine derivatives used as low-loss binders and precursors for making ceramic boron nitride structures. The derivative forms the same composition as the boron nitride starting material, thereby filling the voids with the same boron nitride material upon forming and hot pressing. The derivatives have a further advantage of being low in carbon thus resulting in less volatile byproduct that can result in bubble formation during pressing.

  8. Synthesis and characterization of nitrides of iridium and palladiums

    SciTech Connect (OSTI)

    Crowhurst, Jonathan C.; Goncharov, Alexander F.; Sadigh, B.; Zaug, J.M.; Aberg, D.; Meng, Yue; Prakapenka, Vitali B. (LLNL); (CIW); (UC)

    2008-08-14

    We describe the synthesis of nitrides of iridium and palladium using the laser-heated diamond anvil cell. We have used the in situ techniques of x-ray powder diffraction and Raman scattering to characterize these compounds and have compared our experimental findings where possible to the results of first-principles theoretical calculations. We suggest that palladium nitride is isostructural with pyrite, while iridium nitride has a monoclinic symmetry and is isostructural with baddeleyite.

  9. Method for locating metallic nitride inclusions in metallic alloy ingots

    DOE Patents [OSTI]

    White, Jack C. (Albany, OR); Traut, Davis E. (Corvallis, OR); Oden, Laurance L. (Albany, OR); Schmitt, Roman A. (Corvallis, OR)

    1992-01-01

    A method of determining the location and history of metallic nitride and/or oxynitride inclusions in metallic melts. The method includes the steps of labeling metallic nitride and/or oxynitride inclusions by making a coreduced metallic-hafnium sponge from a mixture of hafnium chloride and the chloride of a metal, reducing the mixed chlorides with magnesium, nitriding the hafnium-labeled metallic-hafnium sponge, and seeding the sponge to be melted with hafnium-labeled nitride inclusions. The ingots are neutron activated and the hafnium is located by radiometric means. Hafnium possesses exactly the proper metallurgical and radiochemical properties for this use.

  10. Building a linker library for silicon nitride window membrane...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Building a linker library for silicon nitride window membrane functionalization The research in the Emergent Magnetic and Atomic Structures Group is aimed at determining the nature...

  11. Commercialization of Bulk Thermoelectric Materials for Power...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Commercialization of Bulk Thermoelectric Materials for Power Generation Commercialization of Bulk Thermoelectric Materials for Power Generation Critical aspects of technology...

  12. Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

    DOE Patents [OSTI]

    Lowden, Richard A. (Powell, TN)

    1994-01-01

    A process for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.

  13. Nitrided Metallic Bipolar Plates M.P. Brady (project lead)

    E-Print Network [OSTI]

    Nitrided Metallic Bipolar Plates M.P. Brady (project lead) P. F. Tortorelli Oak Ridge National - $2480 K · ORNL (Lead) · Allegheny Ludlum · Funding for Year 2 · Arizona State University - $2050 K wt.% ­ pre-oxidation key to protective surface nitride formation ­ V segregation into Cr-oxide makes

  14. Process for producing ceramic nitrides anc carbonitrides and their precursors

    DOE Patents [OSTI]

    Brown, G.M.; Maya, L.

    1987-02-25

    A process for preparing ceramic nitrides and carbon nitrides in the form of very pure, fine particulate powder. Appropriate precursors is prepared by reaching a transition metal alkylamide with ammonia to produce a mixture of metal amide and metal imide in the form of an easily pyrolyzable precipitate.

  15. Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides

    E-Print Network [OSTI]

    Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides Jill S. Becker, Esther Kim, and conformal coatings of higher nitrides of hafnium and zirconium were produced by atomic layer deposition from-colored, and highly conducting. I. Introduction The mononitrides of hafnium and zirconium of stoi- chiometry MN (M

  16. The role of gallium in the catalytic activity of zeolite [Si,Ga]-ZSM-5 for methanol conversion

    SciTech Connect (OSTI)

    Lalik, E.; Xinsheng Liu; Klinowski, J. [Univ. of Cambridge (United Kingdom)

    1992-01-23

    The authors report results from use of aluminium-free zeolytic catalysts, loaded with gallium to different levels, for the conversion of methanol. Work was done for temperatures up to 400{degrees}C. They find a strong dependence and selectivity for conversion to dimethyl ether with gallium content between 150 and 300{degrees}C. At higher temperatures they observe enhanced conversion of alkanes into aromatics. The graded gallium content allowed the authors to distinguish the gallium activity from that due to any trace aluminium impurities.

  17. Nanowire-templated lateral epitaxial growth of non-polar group III nitrides

    DOE Patents [OSTI]

    Wang, George T. (Albuquerque, NM); Li, Qiming (Albuquerque, NM); Creighton, J. Randall (Albuquerque, NM)

    2010-03-02

    A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.

  18. (Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2009. One company in Utah

    E-Print Network [OSTI]

    diselenide (CIGS) thin film solar cell. The company's CIGS material utilizes a flexible substrate that allows), photodetectors, and solar cells, represented 31% of gallium demand. The remaining 2% was used in research in the United States decreased to between $450 and $500 per kilogram. Several records for solar cell efficiency

  19. Modelling of bulk superconductor magnetization

    E-Print Network [OSTI]

    Ainslie, M. D.; Fujishiro, H.

    2015-03-30

    the physical mechanisms of their magnetization, to assist in interpretation of experimental results, and to predict the performance of practical bulk superconductor-based devices, which is particularly important as many superconducting applications head towards...

  20. Cordierite silicon nitride filters. Final report

    SciTech Connect (OSTI)

    Sawyer, J.; Buchan, B.; Duiven, R.; Berger, M.; Cleveland, J.; Ferri, J.

    1992-02-01

    The objective of this project was to develop a silicon nitride based crossflow filter. This report summarizes the findings and results of the project. The project was phased with Phase I consisting of filter material development and crossflow filter design. Phase II involved filter manufacturing, filter testing under simulated conditions and reporting the results. In Phase I, Cordierite Silicon Nitride (CSN) was developed and tested for permeability and strength. Target values for each of these parameters were established early in the program. The values were met by the material development effort in Phase I. The crossflow filter design effort proceeded by developing a macroscopic design based on required surface area and estimated stresses. Then the thermal and pressure stresses were estimated using finite element analysis. In Phase II of this program, the filter manufacturing technique was developed, and the manufactured filters were tested. The technique developed involved press-bonding extruded tiles to form a filter, producing a monolithic filter after sintering. Filters manufactured using this technique were tested at Acurex and at the Westinghouse Science and Technology Center. The filters did not delaminate during testing and operated and high collection efficiency and good cleanability. Further development in areas of sintering and filter design is recommended.

  1. IEEE Spectrum: Thin-Film Trick Makes Gallium Arsenide Devices Cheap http://spectrum.ieee.org/semiconductors/materials/thinfilm-trick-makes-gallium-arsenide-devices-cheap[5/22/2010 1:39:13 PM

    E-Print Network [OSTI]

    Rogers, John A.

    to man," says Rogers, a materials engineer. Some GaAs solar cells can convert about 40 percent of the sun // MATERIALS NEWS Thin-Film Trick Makes Gallium Arsenide Devices Cheap Rubber-stamping makes creating solarIEEE Spectrum: Thin-Film Trick Makes Gallium Arsenide Devices Cheap http://spectrum.ieee.org

  2. High efficiency III-nitride light-emitting diodes

    DOE Patents [OSTI]

    Crawford, Mary; Koleske, Daniel; Cho, Jaehee; Zhu, Di; Noemaun, Ahmed; Schubert, Martin F; Schubert, E. Fred

    2013-05-28

    Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

  3. Conductive and robust nitride buffer layers on biaxially textured substrates

    DOE Patents [OSTI]

    Sankar, Sambasivan; Goyal, Amit; Barnett, Scott A.; Kim, Ilwon; Kroeger, Donald M.

    2004-08-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metal and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layers. In some embodiments the article further comprises electromagnetic devices which may be super conducting properties.

  4. Conductive and robust nitride buffer layers on biaxially textured substrates

    DOE Patents [OSTI]

    Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

    2009-03-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

  5. Silicon nitride protective coatings for silvered glass mirrors

    DOE Patents [OSTI]

    Tracy, C.E.; Benson, D.K.

    1984-07-20

    A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate prior to metal deposition thereon to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

  6. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2001-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  7. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2002-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  8. The design, construction, and testing of a nuclear fuel rod thermal simulation system to study gallium/Zircaloy interactions 

    E-Print Network [OSTI]

    Allison, Christopher Curtis

    1999-01-01

    The presence of gallium in weapons grade plutonium has raised many questions concerning its use in light water reactor (LWR) fuel rods. The biggest concern is that the gallium will migrate down the thermal gradient in the fuel rod and deposit...

  9. Iron-Nitride Alloy Magnets: Transformation Enabled Nitride Magnets Absent Rare Earths (TEN Mare)

    SciTech Connect (OSTI)

    2012-01-01

    REACT Project: Case Western is developing a highly magnetic iron-nitride alloy to use in the magnets that power electric motors found in EVs and renewable power generators. This would reduce the overall price of the motor by eliminating the expensive imported rare earth minerals typically found in today’s best commercial magnets. The iron-nitride powder is sourced from abundant and inexpensive materials found in the U.S. The ultimate goal of this project is to demonstrate this new magnet system, which contains no rare earths, in a prototype electric motor. This could significantly reduce the amount of greenhouse gases emitted in the U.S. each year by encouraging the use of clean alternatives to oil and coal.

  10. Spin-phonon coupling in scandium doped gallium ferrite

    SciTech Connect (OSTI)

    Chakraborty, Keka R. E-mail: smyusuf@barc.gov.in; Mukadam, M. D.; Basu, S.; Yusuf, S. M. E-mail: smyusuf@barc.gov.in; Paul, Barnita; Roy, Anushree; Grover, Vinita; Tyagi, A. K.

    2015-03-28

    We embarked on a study of Scandium (Sc) doped (onto Ga site) gallium ferrite (GaFeO{sub 3}) and found remarkable magnetic properties. In both doped as well as parent compounds, there were three types of Fe{sup 3+} ions (depending on the symmetry) with the structure conforming to space group Pna2{sub 1} (Sp. Grp. No. 33) below room temperature down to 5?K. We also found that all Fe{sup 3+} ions occupy octahedral sites, and carry high spin moment. For the higher Sc substituted sample (Ga{sub 1?x}Sc{sub x}FeO{sub 3}: x?=?0.3), a canted magnetic ordered state is found. Spin-phonon coupling below Néel temperature was observed in doped compounds. Our results indicated that Sc doping in octahedral site modifies spin-phonon interactions of the parent compound. The spin-phonon coupling strength was estimated for the first time in these Sc substituted compounds.

  11. Hydrogenation of palladium rich compounds of aluminium, gallium and indium

    SciTech Connect (OSTI)

    Kohlmann, H.

    2010-02-15

    Palladium rich intermetallic compounds of aluminium, gallium and indium have been studied before and after hydrogenation by powder X-ray diffraction and during hydrogenation by in situ thermal analysis (DSC) at hydrogen gas pressures up to 39 MPa and temperatures up to 700 K. Very weak DSC signals and small unit cell increases of below 1% for AlPd{sub 2}, AlPd{sub 3}, GaPd{sub 2}, Ga{sub 5}Pd{sub 13}, In{sub 3}Pd{sub 5}, and InPd{sub 2} suggest negligible hydrogen uptake. In contrast, for both tetragonal modifications of InPd{sub 3} (ZrAl{sub 3} and TiAl{sub 3} type), heating to 523 K at 2 MPa hydrogen pressure leads to a rearrangement of the intermetallic structure to a cubic AuCu{sub 3} type with an increase in unit cell volume per formula unit by 3.6-3.9%. Gravimetric analysis suggests a composition InPd{sub 3}H{sub a}pprox{sub 0.8} for the hydrogenation product. Very similar behaviour is found for the deuteration of InPd{sub 3}. - Graphical abstract: In situ differential scanning calorimetry of the hydrogenation of tetragonal InPd{sub 3} (ZrAl{sub 3} type) at 1.3 MPa hydrogen pressure.

  12. Recent Device Developments with Advanced Bulk Thermoelectric...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    with Advanced Bulk Thermoelectric Materials at RTI Reviews work in engineered thin-film nanoscale thermoelectric materials and nano-bulk materials with high ZT undertaken by...

  13. INVESTIGATION OF BULK POWER MIDWEST REGION

    E-Print Network [OSTI]

    Laughlin, Robert B.

    INVESTIGATION OF BULK POWER MARKETS MIDWEST REGION November 1, 2000 The analyses and conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-11 1. Bulk Power Prices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-24 D. Retail Access

  14. Thermoelectric Bulk Materials from the Explosive Consolidation...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Bulk Materials from the Explosive Consolidation of Nanopowders Thermoelectric Bulk Materials from the Explosive Consolidation of Nanopowders Describes technique of explosively...

  15. Deposition of metallic gallium on re-crystallized ceramic material during focused ion beam milling

    SciTech Connect (OSTI)

    Muńoz-Tabares, J.A.; Reyes-Gasga, J.

    2013-12-15

    We report a new kind of artifact observed in the preparation of a TEM sample of zirconia by FIB, which consists in the deposition of metallic gallium nano-dots on the TEM sample surface. High resolution TEM images showed a microstructure of fine equiaxed grains of ? 5 nm, with some of them possessing two particular characteristics: high contrast and well-defined fast Fourier transform. These grains could not be identified as any phase of zirconia but it was possible to identify them as gallium crystals in the zone axis [110]. Based on HRTEM simulations, the possible orientations between zirconia substrate and deposited gallium are discussed in terms of lattice mismatch and oxygen affinity. - Highlights: • We show a new type of artifact induced during preparation of TEM samples by FIB. • Deposition of Ga occurs due to its high affinity for oxygen. • Materials with small grain size (? 5 nm) could promote Ga deposition. • Small grain size permits the elastic accommodation of deposited Ga.

  16. Failure of silicon nitride under uniaxial compression at high temperature

    E-Print Network [OSTI]

    Gei, Massimiliano

    nitride cylinders have been investigated under uniaxial compression at 1200 °C in air. Samples has been carried out in order to de- scribe the onset of the specific failure mode. The first failure

  17. NOVEL SALTS OF GRAPHITE AND A BORON NITRIDE SALT

    E-Print Network [OSTI]

    Bartlett, Neil

    2011-01-01

    ~ i\\f'{y AND DOCUMENTS SECTION NOVEL SALTS OF GRAPHITE ANDA BORON NITRIDE SALT Neil Bartlett, R. N. Biagioni, B. W.privately owned rights. Novel Salts of Graphite and a Boron

  18. Single-layer graphene on silicon nitride micromembrane resonators

    E-Print Network [OSTI]

    Schmid, Silvan

    Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization ...

  19. III-Nitride Nanowires: Emerging Materials for Lighting and Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    III-Nitride Nanowires: Emerging Materials for Lighting and Energy Applications March 20, 2012 at 3pm36-428 George T. Wang Advanced Materials Science, Sandia National Laboratories...

  20. Process for manufacture of semipermeable silicon nitride membranes

    DOE Patents [OSTI]

    Galambos, Paul Charles; Shul, Randy J.; Willison, Christi Gober

    2003-12-09

    A new class of semipermeable membranes, and techniques for their fabrication, have been developed. These membranes, formed by appropriate etching of a deposited silicon nitride layer, are robust, easily manufacturable, and compatible with a wide range of silicon micromachining techniques.

  1. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    SciTech Connect (OSTI)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

    2015-05-15

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm˛ with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  2. Crystal chemistry and self-lubricating properties of monochalcogenides gallium selenide and tin selenide

    SciTech Connect (OSTI)

    Erdemir, A.

    1993-02-01

    This paper describes the fundamentals of the crystal chemistry and self-lubricating mechanisms of two monochalcogenides; tin selenide and gallium selenide. Specifically, it enumerates their inter-atomic array and bond structure in crystalline states, and correlates this fundamental knowledge with their self-lubricating capacity. Friction tests assessing the self-lubricating performance of gallium and tin selenides were carried out on a pin-on-disk machine. Specifically, large crystalline pieces of gallium selenide and tin selenide were cut and cleaved into flat squares and subsequently rubbed against the sapphire balls. In another case, the fine powders (particle size {approx} 50--100 {mu}m) of gallium selenide and tin selenide were manually fed into the sliding interfaces of 440C pins and 440C disks. For the specific test conditions explored, it was found that the friction coefficients of the sapphire/gallium selenide and sapphire/tin selenide pairs were {approx} 0.23 and {approx} 0.35, respectively. The friction coefficients of 440C pin/440C disk test pairs with gallium selenide and tin selenide powders were on the orders of {approx} 0.22 and {approx} 0.38, respectively. For comparison, a number of parallel friction tests were performed with MoS{sub 2} powders and compacts and the results of these tests were also reported. The friction data together with the crystal-chemical knowledge and the electron microscopic evidence supported the conclusion that the lubricity and self-lubricating mechanisms of these solids are closely related to their crystal chemistry and the nature of interlayer bonding.

  3. Apparatus for the production of boron nitride nanotubes

    SciTech Connect (OSTI)

    Smith, Michael W; Jordan, Kevin

    2014-06-17

    An apparatus for the large scale production of boron nitride nanotubes comprising; a pressure chamber containing; a continuously fed boron containing target; a source of thermal energy preferably a focused laser beam; a cooled condenser; a source of pressurized nitrogen gas; and a mechanism for extracting boron nitride nanotubes that are condensed on or in the area of the cooled condenser from the pressure chamber.

  4. Method for silicon nitride precursor solids recovery

    DOE Patents [OSTI]

    Crosbie, Gary M. (Dearborn, MI); Predmesky, Ronald L. (Livonia, MI); Nicholson, John M. (Wayne, MI)

    1992-12-15

    Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

  5. Apparatus for silicon nitride precursor solids recovery

    DOE Patents [OSTI]

    Crosbie, Gary M. (Dearborn, MI); Predmesky, Ronald L. (Livonia, MI); Nicholson, John M. (Wayne, MI)

    1995-04-04

    Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

  6. A boron nitride nanotube peapod thermal rectifier

    SciTech Connect (OSTI)

    Loh, G. C., E-mail: jgloh@mtu.edu [Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Institute of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore); Baillargeat, D. [CNRS-International-NTU-Thales Research Alliance (CINTRA), 50 Nanyang Drive, Singapore 637553 (Singapore)

    2014-06-28

    The precise guidance of heat from one specific location to another is paramount in many industrial and commercial applications, including thermal management and thermoelectric generation. One of the cardinal requirements is a preferential conduction of thermal energy, also known as thermal rectification, in the materials. This study introduces a novel nanomaterial for rectifying heat—the boron nitride nanotube peapod thermal rectifier. Classical non-equilibrium molecular dynamics simulations are performed on this nanomaterial, and interestingly, the strength of the rectification phenomenon is dissimilar at different operating temperatures. This is due to the contingence of the thermal flux on the conductance at the localized region around the scatterer, which varies with temperature. The rectification performance of the peapod rectifier is inherently dependent on its asymmetry. Last but not least, the favourable rectifying direction in the nanomaterial is established.

  7. Percolation of gallium dominates the electrical resistance of focused ion beam deposited metals

    SciTech Connect (OSTI)

    Faraby, H. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States); DiBattista, M. [Qualcomm Technologies Incorporated, San Diego, California 92121 (United States); Bandaru, P. R., E-mail: pbandaru@ucsd.edu [Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

    2014-04-28

    Metal deposition through focused ion beam (FIB) based systems is thought to result in material composed of the primary metal from the metallo-organic precursor in addition to carbon, oxygen, and gallium. We determined, through electrical resistance and chemical composition measurements on a wide range of FIB deposited platinum and tungsten lines, that the gallium ion (Ga{sup +}) concentration in the metal lines plays the dominant role in controlling the electrical resistivity. Effective medium theory, based on McLachlan's formalisms, was used to describe the relationship between the Ga{sup +} concentration and the corresponding resistivity.

  8. Results of the Gallium-Clad Phase 3 and Phase 4 tasks (canceled prior to completion)

    SciTech Connect (OSTI)

    Morris, R.N.

    1998-08-01

    This report summarizes the results of the Gallium-Clad interactions Phase 3 and 4 tasks. Both tasks were to involve examining the out-of-pile stability of residual gallium in short fuel rods with an imposed thermal gradient. The thermal environment was to be created by an electrical heater in the center of the fuel rod and coolant flow on the rod outer cladding. Both tasks were canceled due to difficulties with fuel pellet fabrication, delays in the preparation of the test apparatus, and changes in the Fissile Materials Disposition program budget.

  9. Superconductivity in gallium-substituted Ba8Si46 clathrates 

    E-Print Network [OSTI]

    Li, Yang; Zhang, Ruihong; Liu, Yang; Chen, Ning; Luo, Z. P.; Ma, Xingqiao; Cao, Guohui; Feng, Z. S.; Hu, Chia-Ren; Ross, Joseph H., Jr.

    2007-01-01

    We report a joint experimental and theoretical investigation of superconductivity in Ga-substituted type-I silicon clathrates. We prepared samples of the general formula Ba8Si46-xGax, with different values of x. We show that Ba8Si40Ga6 is a bulk...

  10. Synthesis of III-V nitride nanowires with controlled structure, morphology, and composition

    E-Print Network [OSTI]

    Crawford, Samuel Curtis

    2014-01-01

    The III-V nitride materials system offers tunable electronic and optical properties that can be tailored for specific electronic and optoelectronic applications by varying the (In,Ga,Al)N alloy composition. While nitride ...

  11. Feasibility of breeding in hard spectrum boiling water reactors with oxide and nitride fuels

    E-Print Network [OSTI]

    Feng, Bo, Ph. D. Massachusetts Institute of Technology

    2011-01-01

    This study assesses the neutronic, thermal-hydraulic, and fuel performance aspects of using nitride fuel in place of oxides in Pu-based high conversion light water reactor designs. Using the higher density nitride fuel ...

  12. Modification of surface properties on a nitride based coating films through mirror-quality finish grinding

    E-Print Network [OSTI]

    Katahira, K.; H. Ohmori; J. Komotori; Dornfeld, David; H. Kotani; M. Mizutani

    2010-01-01

    on a nitride based coating ?lms through mirror-quality ?nishA B S T R A C T Keywords: Coating Grinding Tribology In thistitanium nitride based coating ?lms ( TiN, TiCN, and TiAIN).

  13. Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells

    E-Print Network [OSTI]

    Rockett, Angus

    Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A conversion efficiency of solar cells made from this material [1]. One of the special qualities of the CIGS improve the solar cell performance. In many of the different CIGS fabrication techniques, an in depth

  14. Optical, electrical, and solar energy-conversion properties of gallium arsenide nanowire-array

    E-Print Network [OSTI]

    Zhou, Chongwu

    Optical, electrical, and solar energy-conversion properties of gallium arsenide nanowire, and will aid in the design and optimization of nanowire-based systems for solar energy-conversion applications, and the photoelectrochemical energy-conversion properties of GaAs nanowire arrays were evaluated in contact with one

  15. HIGH-TEMPERATURE THERMODYNAMIC ACTIVITIES OF ZIRCONIUM IN PLATINUM ALLOYS DETERMINED BY NITROGEN-NITRIDE EQUILIBRIA

    E-Print Network [OSTI]

    Goodman, David Alan

    2010-01-01

    powders could not be accurately A mixture of 87 volume percent zirconium nitride and 13 volume percent -325 mesh palladium

  16. CHARGE STABILITY IN LPCVD SILICON NITRIDE FOR SURFACE PASSIVATION OF SILICON SOLAR CELLS

    E-Print Network [OSTI]

    to be mainly concentrated at the oxide/nitride interface. The thermal stability of the charge is shown silicon nitride layers can lead to a significant improvement in surface recombination at lightly doped of a tunnel oxide, a silicon nitride layer and optionally, a barrier oxide or other dielectric material. As

  17. DETERMINING OPTICAL CONSTANTS OF URANIUM NITRIDE THIN FILMS IN THE EXTREME

    E-Print Network [OSTI]

    Hart, Gus

    deposition and characterization of reactively-sputtered uranium nitride thin films. I also report opticalDETERMINING OPTICAL CONSTANTS OF URANIUM NITRIDE THIN FILMS IN THE EXTREME ULTRAVIOLET (1.6-35 NM.1 Application 1 1.2 Optical Constants 2 1.3 Project Focus 7 2 Uranium Nitride Thin Films 8 2.1 Sputtering 8 2

  18. Half-metallic to insulating behavior of rare-earth nitrides C. M. Aerts,1

    E-Print Network [OSTI]

    Svane, Axel Torstein

    Half-metallic to insulating behavior of rare-earth nitrides C. M. Aerts,1 P. Strange,1 M. Horne,1 W in the literature that rare-earth nitrides may form half-metallic ferromagnets.6­8 This is sur- prising because 30 January 2004 The electronic structure of the rare-earth nitrides is studied systematically using

  19. INVESTIGATION OF BULK POWER ERCOT (Texas)

    E-Print Network [OSTI]

    Laughlin, Robert B.

    INVESTIGATION OF BULK POWER MARKETS ERCOT (Texas) November 1, 2000 The analyses and conclusions . . . . . . . . . . . . . . . . . . . . . . . . 4-4 D. The New Wholesale Market and the Move Toward Retail Choice . . . . . . . . . . 4-6 3-8 A. The Bulk Power Transmission System

  20. Active Control of Nitride Plasmonic Dispersion in the Far Infrared.

    SciTech Connect (OSTI)

    Shaner, Eric A.; Dyer, Gregory Conrad; Seng, William Francis; Bethke, Donald Thomas; Grine, Albert Dario,; Baca, Albert G.; Allerman, Andrew A.

    2014-11-01

    We investigate plasmonic structures in nitride-based materials for far-infrared (IR) applications. The two dimensional electron gas (2DEG) in the GaN/AlGaN material system, much like metal- dielectric structures, is a patternable plasmonic medium. However, it also permits for direct tunability via an applied voltage. While there have been proof-of-principle demonstrations of plasma excitations in nitride 2DEGs, exploration of the potential of this material system has thus far been limited. We recently demonstrated coherent phenomena such as the formation of plasmonic crystals, strong coupling of tunable crystal defects to a plasmonic crystal, and electromagnetically induced transparency in GaAs/AlGaAs 2DEGs at sub-THz frequencies. In this project, we explore whether these effects can be realized in nitride 2DEG materials above 1 THz and at temperatures exceeding 77 K.

  1. Cooled silicon nitride stationary turbine vane risk reduction. Final report

    SciTech Connect (OSTI)

    Holowczak, John

    1999-12-31

    The purpose of this program was to reduce the technical risk factors for demonstration of air cooled silicon nitride turbine vanes. The effort involved vane prototype fabrication efforts at two U.S. based gas turbine grade silicon nitride component manufacturers. The efficacy of the cooling system was analyzed via a thermal time/temperature flow test technique previously at UTRC. By having multiple vendors work on parts fabrication, the chance of program success increased for producing these challenging components. The majority of the effort under this contract focused on developing methods for, and producing, the complex thin walled silicon nitride vanes. Components developed under this program will undergo engine environment testing within N00014-96-2-0014.

  2. Structural studies of magnesium nitride fluorides by powder neutron diffraction

    SciTech Connect (OSTI)

    Brogan, Michael A.; Hughes, Robert W.; Smith, Ronald I.; Gregory, Duncan H.

    2012-01-15

    Samples of ternary nitride fluorides, Mg{sub 3}NF{sub 3} and Mg{sub 2}NF have been prepared by solid state reaction of Mg{sub 3}N{sub 2} and MgF{sub 2} at 1323-1423 K and investigated by powder X-ray and powder neutron diffraction techniques. Mg{sub 3}NF{sub 3} is cubic (space group: Pm3m) and has a structure related to rock-salt MgO, but with one cation site vacant. Mg{sub 2}NF is tetragonal (space group: I4{sub 1}/amd) and has an anti-LiFeO{sub 2} related structure. Both compounds are essentially ionic and form structures in which nitride and fluoride anions are crystallographically ordered. The nitride fluorides show temperature independent paramagnetic behaviour between 5 and 300 K. - Graphical abstract: Definitive structures of the ternary magnesium nitride fluorides Mg{sub 3}NF{sub 3} and the lower temperature polymorph of Mg{sub 2}NF have been determined from powder neutron diffraction data. The nitride halides are essentially ionic and exhibit weak temperature independent paramagnetic behaviour. Highlights: Black-Right-Pointing-Pointer Definitive structures of Mg{sub 3}NF{sub 3} and Mg{sub 2}NF were determined by neutron diffraction. Black-Right-Pointing-Pointer Nitride and fluoride anions are crystallographically ordered in both structures. Black-Right-Pointing-Pointer Both compounds exhibit weak, temperature independent paramagnetic behaviour. Black-Right-Pointing-Pointer The compounds are essentially ionic with ionicity increasing with F{sup -} content.

  3. Synthesis and Optimization of the Sintering Kinetics of Actinide Nitrides

    SciTech Connect (OSTI)

    Drryl P. Butt; Brian Jaques

    2009-03-31

    Research conducted for this NERI project has advanced the understanding and feasibility of nitride nuclear fuel processing. In order to perform this research, necessary laboratory infrastructure was developed; including basic facilities and experimental equipment. Notable accomplishments from this project include: the synthesis of uranium, dysprosium, and cerium nitrides using a novel, low-cost mechanical method at room temperature; the synthesis of phase pure UN, DyN, and CeN using thermal methods; and the sintering of UN and (Ux, Dy1-x)N (0.7 ? X ? 1) pellets from phase pure powder that was synthesized in the Advanced Materials Laboratory at Boise State University.

  4. Process for synthesizing titanium carbide, titanium nitride and titanium carbonitride

    DOE Patents [OSTI]

    Koc, Rasit (Lakewood, CO); Glatzmaier, Gregory C. (Boulder, CO)

    1995-01-01

    A process for synthesizing titanium carbide, titanium nitride or titanium carbonitride. The process comprises placing particles of titanium, a titanium salt or titanium dioxide within a vessel and providing a carbon-containing atmosphere within the vessel. The vessel is heated to a pyrolysis temperature sufficient to pyrolyze the carbon to thereby coat the particles with a carbon coating. Thereafter, the carbon-coated particles are heated in an inert atmosphere to produce titanium carbide, or in a nitrogen atmosphere to produce titanium nitride or titanium carbonitride, with the heating being of a temperature and time sufficient to produce a substantially complete solid solution.

  5. Fast neutron scattering on Gallium target at 14.8 MeV

    E-Print Network [OSTI]

    R. Han; R. Wada; Z. Chen; Y. Nie; X. Liu; S. Zhang; P. Ren; B. Jia; G. Tian; F. Luo; W. Lin; J. Liu; F. Shi; M. Huang; X. Ruan; J. Ren; Z. Zhou; H. Huang; J. Bao; K. Zhang; B. Hu

    2014-11-03

    Benchmarking of evaluated nuclear data libraries was performed for $\\sim 14.8$ MeV neutrons on Gallium targets. The experiments were performed at China Institute of Atomic Energy(CIAE). Solid samples of natural Gallium (3.2 cm and 6.4 cm thick) were bombarded by $\\sim 14.8$ MeV neutrons and leakage neutron energy spectra were measured at 60$^{\\circ}$ and 120$^{\\circ}$. The measured spectra are rather well reproduced by MCNP-4C simulations with the CENDL-3.1, ENDF/B-VII and JENDL-4.0 evaluated nuclear data libraries, except for the inelastic contributions around $E_{n} = 10-13$ MeV. All three libraries significantly underestimate the inelastic contributions. The inelastic contributions are further studied, using the Talys simulation code and the experimental spectra are reproduced reasonably well in the whole energy range by the Talys calculation, including the inelastic contributions.

  6. Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

    SciTech Connect (OSTI)

    Hosalli, A. M.; Van Den Broeck, D. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)

    2013-12-02

    We demonstrate a metalorganic chemical vapor deposition growth approach for inverting N-polar to Ga-polar GaN by using a thin inversion layer grown with high Mg flux. The introduction of this inversion layer allowed us to grow p-GaN films on N-polar GaN thin film. We have studied the dependence of hole concentration, surface morphology, and degree of polarity inversion for the inverted Ga-polar surface on the thickness of the inversion layer. We then use this approach to grow a light emitting diode structure which has the MQW active region grown on the advantageous N-polar surface and the p-layer grown on the inverted Ga-polar surface.

  7. BORON NITRIDE CAPACITORS FOR ADVANCED POWER ELECTRONIC DEVICES

    SciTech Connect (OSTI)

    N. Badi; D. Starikov; C. Boney; A. Bensaoula; D. Johnstone

    2010-11-01

    This project fabricates long-life boron nitride/boron oxynitride thin film -based capacitors for advanced SiC power electronics with a broad operating temperature range using a physical vapor deposition (PVD) technique. The use of vapor deposition provides for precise control and quality material formation.

  8. Lattice matched crystalline substrates for cubic nitride semiconductor growth

    DOE Patents [OSTI]

    Norman, Andrew G; Ptak, Aaron J; McMahon, William E

    2015-02-24

    Disclosed embodiments include methods of fabricating a semiconductor layer or device and devices fabricated thereby. The methods include, but are not limited to, providing a substrate having a cubic crystalline surface with a known lattice parameter and growing a cubic crystalline group III-nitride alloy layer on the cubic crystalline substrate by coincident site lattice matched epitaxy. The cubic crystalline group III-nitride alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter of the substrate (a). The group III-nitride alloy may be a cubic crystalline In.sub.xGa.sub.yAl.sub.1-x-yN alloy. The lattice parameter of the In.sub.xGa.sub.yAl.sub.1-x-yN or other group III-nitride alloy may be related to the substrate lattice parameter by (a')= 2(a) or (a')=(a)/ 2. The semiconductor alloy may be prepared to have a selected band gap.

  9. Boron nitride substrates for high-quality graphene electronics

    E-Print Network [OSTI]

    Shepard, Kenneth

    Boron nitride substrates for high-quality graphene electronics C. R. Dean1,2 *, A. F. Young3 , I and J. Hone2 * Graphene devices on standard SiO2 substrates are highly disor- dered, exhibiting characteristics that are far inferior to the expected intrinsic properties of graphene1­12 . Although suspend- ing

  10. Methods for improved growth of group III nitride buffer layers

    DOE Patents [OSTI]

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  11. Evaluation and silicon nitride internal combustion engine components

    SciTech Connect (OSTI)

    Voldrich, W. (Allied-Signal Aerospace Co., Torrance, CA (United States). Garrett Ceramic Components Div.)

    1992-04-01

    The feasibility of silicon nitride (Si[sub 3]N[sub 4]) use in internal combustion engines was studied by testing three different components for wear resistance and lower reciprocating mass. The information obtained from these preliminary spin rig and engine tests indicates several design changes are necessary to survive high-stress engine applications. The three silicon nitride components tested were valve spring retainers, tappet rollers, and fuel pump push rod ends. Garrett Ceramic Components' gas-pressure sinterable Si[sub 3]N[sub 4] (GS-44) was used to fabricate the above components. Components were final machined from densified blanks that had been green formed by isostatic pressing of GS-44 granules. Spin rig testing of the valve spring retainers indicated that these Si[sub 3]N[sub 4] components could survive at high RPM levels (9,500) when teamed with silicon nitride valves and lower spring tension than standard titanium components. Silicon nitride tappet rollers showed no wear on roller O.D. or I.D. surfaces, steel axles and lifters; however, due to the uncrowned design of these particular rollers the cam lobes indicated wear after spin rig testing. Fuel pump push rod ends were successful at reducing wear on the cam lobe and rod end when tested on spin rigs and in real-world race applications.

  12. Continuous Fiber Ceramic Composite (CFCC) Program: Gaseous Nitridation

    SciTech Connect (OSTI)

    R. Suplinskas G. DiBona; W. Grant

    2001-10-29

    Textron has developed a mature process for the fabrication of continuous fiber ceramic composite (CFCC) tubes for application in the aluminum processing and casting industry. The major milestones in this project are System Composition; Matrix Formulation; Preform Fabrication; Nitridation; Material Characterization; Component Evaluation

  13. First-principles study on the interaction of nitrogen atom with ?–uranium: From surface adsorption to bulk diffusion

    SciTech Connect (OSTI)

    Su, Qiulei; Deng, Huiqiu, E-mail: hqdeng@hnu.edu.cn, E-mail: hqdeng@gmail.com; Xiao, Shifang; Li, Xiaofan; Hu, Wangyu [Department of Applied Physics, Hunan University, Changsha 410082 (China); Ao, Bingyun; Chen, Piheng [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China)

    2014-04-28

    Experimental studies of nitriding on uranium surfaces show that the modified layers provide considerable protection against air corrosion. The bimodal distribution of nitrogen is affected by both its implantation and diffusion, and the diffusion of nitrogen during implantation is also governed by vacancy trapping. In the present paper, nitrogen adsorption, absorption, diffusion, and vacancy trapping on the surface of and in the bulk of ?–uranium are studied with a first-principles density functional theory approach and the climbing image nudged elastic band method. The calculated results indicate that, regardless of the nitrogen coverage, a nitrogen atom prefers to reside at the hollow1 site and octahedral (Oct) site on and below the surface, respectively. The lowest energy barriers for on-surface and penetration diffusion occur at a coverage of 1/2 monolayer. A nitrogen atom prefers to occupy the Oct site in bulk ?–uranium. High energy barriers are observed during the diffusion between neighboring Oct sites. A vacancy can capture its nearby interstitial nitrogen atom with a low energy barrier, providing a significant attractive nitrogen-vacancy interaction at the trapping center site. This study provides a reference for understanding the nitriding process on uranium surfaces.

  14. Gallium suboxide vapor attack on chromium, cobalt, molybdenum, tungsten and their alloys at 1200 [degrees] C

    SciTech Connect (OSTI)

    Kolman, D. G. (David G.); Taylor, T. N. (Thomas N.); Park, Y. (Youngsoo); Stan, M. (Marius); Butt, D. P. (Darryl P.); Maggiore, C. J. (Carl J.); Tesmer, Joseph R.; Havrilla, G. J. (George J.)

    2004-01-01

    Our prior work elucidated the failure mechanism of furnace materi als (304 SS, 316 SS, and Hastelloy C-276) exposed to gallium suboxide (Ga{sub 2}O) and/or gallium oxide (Ga{sub 2}O{sub 3}) during plutonium - gallium compound processing. Failure was hypothesized to result from concurrent alloy oxidation/Ga compound reduction followed by Ga uptake. The aim of the current work is to screen candidate replacement materials. Alloys Haynes 25 (49 Co - 20 Cr - 15 W - 10 Ni - 3 Fe - 2 Mn - 0.4 Si, wt%), 52 Mo - 48 Re (wt%), 62 W - 38 Cu (wt%), and commercially pure Cr, Co, Mo, W, and alumina were examined. Preliminary assessments of commercially pure W and Mo - Re suggest that these materials may be suitable for furnace construction. Thermodynamics calculations indicating that materials containing Al, Cr, Mn, Si, and V would be susceptible to oxidation in the presence of Ga{sub 2}O were validated by experimental results. In contrast to that reported previously, an alternate reaction mechanism for Ga uptake, which does not require concurrent alloy oxidation, controls Ga uptake for certain materials. A correlation between Ga solubility and uptake was noted.

  15. Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-

    E-Print Network [OSTI]

    Lee, Jong Duk

    Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative at elevated temperatures 150 °C , which can be used for extracting the electron trap density distribution tunneling, Eox t is the internal electric field induced by the trapped charges in the silicon nitride layer

  16. Li3PX4: Bulk and Surface

    E-Print Network [OSTI]

    Holzwarth, Natalie

    show considerable promise for advancing battery technology · Improved safety characteristics · Allow properties are: · Stability · Inteface stability · Ionic Conductivity Tesla Model S #12;Li3PX4: Bulk

  17. Nanostructured High Temperature Bulk Thermoelectric Energy Conversion...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    stage expected to show a 5% fuel efficiency improvement in vehicle platform under US06 drive cycle caylor.pdf More Documents & Publications Nanostructured High-Temperature Bulk...

  18. (Polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2001-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interefere in the ethylene polymerization process, while affecting the the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  19. Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications

    DOE Patents [OSTI]

    Hui, Rongqing (Lenexa, KS); Jiang,Hong-Xing (Manhattan, KS); Lin, Jing-Yu (Manhattan, KS)

    2008-03-18

    The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

  20. Synthesis and Functionalization of Carbon and Boron Nitride Nanomaterials and Their Applications

    E-Print Network [OSTI]

    Erickson, Kristopher John

    2012-01-01

    Carbon Nitrides for Hydrogen Storage. Adv. Funct. Mater.N compounds for chemical hydrogen storage. Chemical SocietyT. , High-Pressure Hydrogen Storage in Zeolite-Templated

  1. Premelting at Defects Within Bulk Colloidal Crystals

    E-Print Network [OSTI]

    Collings, Peter

    Premelting at Defects Within Bulk Colloidal Crystals A. M. Alsayed,1 M. F. Islam,1 J. Zhang,1 P. J at grain boundaries and dislocations within bulk colloidal crystals using real- time video microscopy. The crystals are equilibrium close-packed, three- dimensional colloidal structures made from thermally

  2. The phase diagram and hardness of carbon nitrides

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dong, Huafeng; Oganov, Artem R.; Moscow Inst. of Physics and Technology; Northwestern Polytechnical Univ., Xi'an; Zhu, Qiang; Qian, Guang-Rui

    2015-05-06

    Novel superhard materials, especially those with superior thermal and chemical stability, are needed to replace diamond. Carbon nitrides (C-N), which are likely to possess these characteristics and have even been expected to be harder than diamond, are excellent candidates. Here we report three new superhard and thermodynamically stable carbon nitride phases. Based on a systematic evolutionary structure searches, we report a complete phase diagram of the C-N system at 0–300 GPa and analyze the hardest metastable structures. Surprisingly, we find that at zero pressure, the earlier proposed graphitic-C3N4 structure (P6-bar m2) is dynamically unstable, and we find the lowest-energy structuremore »based on s-triazine unit and s-heptazine unit.« less

  3. The phase diagram and hardness of carbon nitrides

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dong, Huafeng; Oganov, Artem R.; Zhu, Qiang; Qian, Guang-Rui

    2015-05-06

    Novel superhard materials, especially those with superior thermal and chemical stability, are needed to replace diamond. Carbon nitrides (C-N), which are likely to possess these characteristics and have even been expected to be harder than diamond, are excellent candidates. Here we report three new superhard and thermodynamically stable carbon nitride phases. Based on a systematic evolutionary structure searches, we report a complete phase diagram of the C-N system at 0–300 GPa and analyze the hardest metastable structures. Surprisingly, we find that at zero pressure, the earlier proposed graphitic-C3N4 structure (P_6m2) is dynamically unstable, and we find the lowest-energy structure based on s-triazine unit and s-heptazine unit.

  4. Bulk equations of motion from CFT correlators

    E-Print Network [OSTI]

    Daniel Kabat; Gilad Lifschytz

    2015-07-27

    To O(1/N) we derive, purely from CFT data, the bulk equations of motion for interacting scalar fields and for scalars coupled to gauge fields and gravity. We first uplift CFT operators to mimic local AdS fields by imposing bulk microcausality. This requires adding an infinite tower of smeared higher-dimension double-trace operators to the CFT definition of a bulk field, with coefficients that we explicitly compute. By summing the contribution of the higher-dimension operators we derive the equations of motion satisfied by these uplifted CFT operators and show that we precisely recover the expected bulk equations of motion. We exhibit the freedom in the CFT construction which corresponds to bulk field redefinitions.

  5. Bulk equations of motion from CFT correlators

    E-Print Network [OSTI]

    Kabat, Daniel

    2015-01-01

    To O(1/N) we derive, purely from CFT data, the bulk equations of motion for interacting scalar fields and for scalars coupled to gauge fields and gravity. We first uplift CFT operators to mimic local AdS fields by imposing bulk microcausality. This requires adding an infinite tower of smeared higher-dimension double-trace operators to the CFT definition of a bulk field, with coefficients that we explicitly compute. By summing the contribution of the higher-dimension operators we derive the equations of motion satisfied by these uplifted CFT operators and show that we precisely recover the expected bulk equations of motion. We exhibit the freedom in the CFT construction which corresponds to bulk field redefinitions.

  6. Charge carrier transport properties in layer structured hexagonal boron nitride

    SciTech Connect (OSTI)

    Doan, T. C.; Li, J.; Lin, J. Y.; Jiang, H. X., E-mail: hx.jiang@ttu.edu [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

    2014-10-15

    Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (~ 6.4 eV), hexagonal boron nitride (hBN) has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700?°K). The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of ? ? (T/T{sub 0}){sup ??} with ? = 3.02, satisfying the two-dimensional (2D) carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ?? = 192 meV (or 1546 cm{sup -1}), which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

  7. Study the gas sensing properties of boron nitride nanosheets

    SciTech Connect (OSTI)

    Sajjad, Muhammad; Feng, Peter, E-mail: p.feng@upr.edu

    2014-01-01

    Graphical abstract: - Highlights: • We synthesized boron nitride nanosheets (BNNSs) on silicon substrate. • We analyzed gas sensing properties of BNNSs-based gas-sensor device. • CH{sub 4} gas is used to measure gas-sensing properties of the device. • Quick response and recovery time of the device is recorded. • BNNSs showed excellent sensitivity to the working gas. - Abstract: In the present communication, we report on the synthesis of boron nitride nanosheets (BNNSs) and study of their gas sensing properties. BNNSs are synthesized by irradiating pyrolytic hexagonal boron nitride (h-BN) target using CO{sub 2} laser pulses. High resolution transmission electron microscopic measurements (HRTEM) revealed 2-dientional honeycomb crystal lattice structure of BNNSs. HRTEM, electron diffraction, XRD and Raman scattering measurements clearly identified h-BN. Gas sensing properties of synthesized BNNSs were analyzed with prototype gas sensor using methane as working gas. A systematic response curve of the sensor is recorded in each cycle of gas “in” and “out”; suggesting excellent sensitivity and high performance of BNNSs-based gas-sensor.

  8. Nitridation under ammonia of high surface area vanadium aerogels

    SciTech Connect (OSTI)

    Merdrignac-Conanec, Odile [Laboratoire Verres et Ceramiques, UMR CNRS 6512, Institut de Chimie de Rennes, Universite de Rennes 1, Campus de Beaulieu, F-35042 Rennes Cedex (France)]. E-mail: odile.merdrignac@univ-rennes1.fr; El Badraoui, Khadija [Laboratoire Verres et Ceramiques, UMR CNRS 6512, Institut de Chimie de Rennes, Universite de Rennes 1, Campus de Beaulieu, F-35042 Rennes Cedex (France); L'Haridon, Paul [Laboratoire Verres et Ceramiques, UMR CNRS 6512, Institut de Chimie de Rennes, Universite de Rennes 1, Campus de Beaulieu, F-35042 Rennes Cedex (France)

    2005-01-15

    Vanadium pentoxide gels have been obtained from decavanadic acid prepared by ion exchange on a resin from ammonium metavanadate solution. The progressive removal of water by solvent exchange in supercritical conditions led to the formation of high surface area V{sub 2}O{sub 5}, 1.6H{sub 2}O aerogels. Heat treatment under ammonia has been performed on these aerogels in the 450-900 deg. C temperature range. The oxide precursors and oxynitrides have been characterized by XRD, SEM, TGA, BET. Nitridation leads to divided oxynitride powders in which the fibrous structure of the aerogel is maintained. The use of both very low heating rates and high surface area aerogel precursors allows a higher rate and a lower threshold of nitridation than those reported in previous works. By adjusting the nitridation temperature, it has been possible to prepare oxynitrides with various nitrogen enrichment and vanadium valency states. Whatever the V(O,N) composition, the oxidation of the oxynitrides in air starts between 250 and 300 deg. C. This determines their potential use as chemical gas sensors at a maximum working temperature of 250 deg. C.

  9. Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors

    SciTech Connect (OSTI)

    Yang, Jyun-Bao; Chen, Yu-Ting; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Huang, Jheng-Jie; Chen, Yu-Chun; Tseng, Hsueh-Chih [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Sze, Simon M. [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China)

    2014-04-14

    In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

  10. Modification of the crystal structure of gadolinium gallium garnet by helium ion irradiation

    SciTech Connect (OSTI)

    Ostafiychuk, B. K.; Yaremiy, I. P. Yaremiy, S. I.; Fedoriv, V. D.; Tomyn, U. O.; Umantsiv, M. M.; Fodchuk, I. M.; Kladko, V. P.

    2013-12-15

    The structure of gadolinium gallium garnet (GGG) single crystals before and after implantation by He{sup +} ions has been investigated using high-resolution X-ray diffraction methods and the generalized dynamic theory of X-ray scattering. The main types of growth defects in GGG single crystals and radiation-induced defects in the ion-implanted layer have been determined. It is established that the concentration of dislocation loops in the GGG surface layer modified by ion implantation increases and their radius decreases with an increase in the implantation dose.

  11. Application of the bounds-analysis approach to arsenic and gallium antisite

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield MunicipalTechnicalInformation4563AbuseConnectJournal Article:(Journalthedefects in gallium

  12. The Bulk Viscosity of a Pion Gas

    E-Print Network [OSTI]

    Egang Lu; Guy D. Moore

    2011-01-31

    We compute the bulk viscosity of a gas of pions at temperatures below the QCD crossover temperature, for the physical value of pion mass, to lowest order in chiral perturbation theory. Bulk viscosity is controlled by number-changing processes which become exponentially slow at low temperatures when the pions become exponentially dilute, leading to an exponentially large bulk viscosity zeta ~ (F_0^8/m_\\pi^5) exp(2m_\\pi/T), where F_0 = 93 MeV is the pion decay constant.

  13. Orogenic movement mechanism for the formation of symmetrical relief features in copper nitride thin films

    E-Print Network [OSTI]

    Zexian, Cao

    Orogenic movement mechanism for the formation of symmetrical relief features in copper nitride thin heterogeneity, etc. In preparing thin films of the thermally unstable copper nitride Cu3N, growth proceeds-gap semiconduc- tors such as SiC and GaN that are expected to operate at temperatures over 300 °C demand both

  14. Field emission and current-voltage properties of boron nitride nanotubes

    E-Print Network [OSTI]

    Rubloff, Gary W.

    Field emission and current-voltage properties of boron nitride nanotubes John Cumings*, A. Zettl microscope. Stable currents were measured in a field emission geometry, but in contact the nanotubes Published by Elsevier Ltd. PACS: 79.70. ţ q Keywords: A. Boron nitride; B. Nanotubes; C. Field emission

  15. Production of defects in hexagonal boron nitride monolayer under ion irradiation O. Lehtinen a,

    E-Print Network [OSTI]

    Krasheninnikov, Arkady V.

    Production of defects in hexagonal boron nitride monolayer under ion irradiation O. Lehtinen a, , E: Hexagonal boron nitride monolayer Ion irradiation Defect a b s t r a c t Atomistic computer simulations monolayer to irradiation with noble gas ions having energies from 35 eV up to 10 MeV. Probabilities

  16. Ultra-thin ohmic contacts for p-type nitride light emitting devices

    DOE Patents [OSTI]

    Raffetto, Mark (Raleigh, NC); Bharathan, Jayesh (Cary, NC); Haberern, Kevin (Cary, NC); Bergmann, Michael (Chapel Hill, NC); Emerson, David (Chapel Hill, NC); Ibbetson, James (Santa Barbara, CA); Li, Ting (Ventura, CA)

    2012-01-03

    A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 .ANG. and a specific contact resistivity less than about 10.sup.-3 ohm-cm.sup.2.

  17. David Niedzwiecki 3/2/2012 2:37:42 PM Protocol for Ultrathin Nitride Membranes

    E-Print Network [OSTI]

    Movileanu, Liviu

    as the thickness of the oxide layer. Patterning of TEM grid pattern: -Coat the wafer using S1813 photoresist using of the wafer to the other. These squares are free- standing oxide and nitride. The oxide layer underneath effective. -Use the Oxford 81 to remove about half of the oxide layer by placing the wafer nitride- side

  18. Tunneling characteristics in chemical vapor deposited graphene hexagonal boron nitride graphene junctions

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Tunneling characteristics in chemical vapor deposited graphene ­ hexagonal boron nitride ­ graphene junctions T. Roy1 , L. Liu2 , S. de la Barrera,3 B. Chakrabarti1,4 , Z. R. Hesabi1 , C. A. Joiner1 Abstract: Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate

  19. Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes

    E-Print Network [OSTI]

    Gilchrist, James F.

    Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes, IEEE DOI: 10.1109/JPHOT.2011.2150745 1943-0655/$26.00 ©2011 IEEE #12;Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect

  20. Effect of swift heavy ion irradiations in polycrystalline aluminum nitride J.C. Nappa,*

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    conductivity, aluminum nitride may be a serious candidate as fuel coating for the Gas Fast Reactor. However-temperature (1100-1300 K). These working conditions led to the selection of non-oxide refractory ceramics as fuel coating; the remarkable thermo-mechanical properties of carbides and nitrides make them great candidates

  1. Thermo-chemical Modelling of Uranium-free Nitride Fuels Mikael JOLKKONEN1;;y

    E-Print Network [OSTI]

    Haviland, David

    be applied to modelling of oxide and carbide fuels as well. In this paper we give a brief introductionThermo-chemical Modelling of Uranium-free Nitride Fuels Mikael JOLKKONEN1;Ă;y , Marco STREIT2 and accepted December 22, 2003) A production process for americium-bearing, uranium-free nitride fuels

  2. Super hard cubic phases of period VI transition metal nitrides: First principles investigation

    E-Print Network [OSTI]

    Khare, Sanjay V.

    and shear modulus for stable phases, potential hard coating materials for cutting tools have been identified July 2008 Keywords: Coatings Elastic properties Hardness Nitrides We report a systematic study B.V. All rights reserved. 1. Introduction Hard coatings of many transition metal nitrides have

  3. Summary - Demonstration Bulk Vitrification System (DBVS) for...

    Office of Environmental Management (EM)

    of the Demonstration Bulk Vitrification System (DBVS) for Low Activity Waste (LAW) at Hanford Why DOE-EM Did This Review The Department of Energy (DOE) is charged with the safe...

  4. Dynamics of formation of photoresponse in a detector structure made of gallium arsenide

    SciTech Connect (OSTI)

    Ayzenshtat, G. I., E-mail: ayzen@mail.tomsknet.ru; Lelekov, M. A.; Tolbanov, O. P. [Tomsk State University (Russian Federation)

    2008-04-15

    The influence of capture effects on the characteristics of detectors of the ionizing radiation based on semi-insulating gallium arsenide is considered. Generation of nonequilibrium electrons and holes along the entire thickness of the active region was performed under illumination with an infrared light-emitting diode with a wavelength of 0.9 {mu}m. In this case, the situation emerging in the device structure under the effect of X-ray radiation or a high-energy electron beam was simulated. It is shown that the variation in the shape of the output signal with time in this case is caused by variation in the electric field profile due to the capture of holes at deep centers in gallium arsenide. An absolutely different distribution of the electric field emerges in the structure under irradiation of a semitransparent cathode of the structure with a red light-emitting diode, emission of which penetrates into the active region for mere 1 {mu}m. In this case, the transformation of the electric field is caused by the capture of electrons. Under the prolonged effect of such radiation, a space-charge-limited current mode emerges in the device.

  5. Iron-based alloy and nitridation treatment for PEM fuel cell bipolar plates

    DOE Patents [OSTI]

    Brady, Michael P. (Oak Ridge, TN) [Oak Ridge, TN; Yang, Bing (Oak Ridge, TN) [Oak Ridge, TN; Maziasz, Philip J. (Oak Ridge, TN) [Oak Ridge, TN

    2010-11-09

    A corrosion resistant electrically conductive component that can be used as a bipolar plate in a PEM fuel cell application is composed of an alloy substrate which has 10-30 wt. % Cr, 0.5 to 7 wt. % V, and base metal being Fe, and a continuous surface layer of chromium nitride and vanadium nitride essentially free of base metal. A oxide layer of chromium vanadium oxide can be disposed between the alloy substrate and the continuous surface nitride layer. A method to prepare the corrosion resistant electrically conductive component involves a two-step nitridization sequence by exposing the alloy to a oxygen containing gas at an elevated temperature, and subsequently exposing the alloy to an oxygen free nitrogen containing gas at an elevated temperature to yield a component where a continuous chromium nitride layer free of iron has formed at the surface.

  6. Nitrided iron catalysts for the Fischer-Tropsch synthesis in the eighties

    SciTech Connect (OSTI)

    Anderson, R.B.

    1980-01-01

    Nitrided iron catalysts are active and durable and have an unusal selectivity. They do not produce significant amounts of wax, which should be advantageous in situations where gasoline is the desired product. The low yield of wax permits operation of nitrided iron in fluidized fixed-bed or entrained reactors at 230 to 255/sup 0/C. Conventional reduced iron catalysts in these reactors must be operated at about 325/sup 0/C to prevent formation of higher hydrocarbon that leads to agglomeration of the fluidized particles. At 325/sup 0/C carbon deposition and other processes leading to catalyst deterioration proceed rapidly. The yields of methane and ethane from nitrided iron are larger than desired for most purposes. Possibly promoters may be found to improve the selectivity of nitrided iron catalysts. The Bureau of Mines did not conduct a systematic catalyst development program on iron nitrides. (DP) 5 fgures, 6 tables.

  7. An assessment of the validity of cerium oxide as a surrogate for plutonium oxide gallium removal studies

    SciTech Connect (OSTI)

    Kolman, D.G.; Park, Y.; Stan, M.; Hanrahan, R.J. Jr.; Butt, D.P.

    1999-03-01

    Methods for purifying plutonium metal have long been established. These methods use acid solutions to dissolve and concentrate the metal. However, these methods can produce significant mixed waste, that is, waste containing both radioactive and chemical hazards. The volume of waste produced from the aqueous purification of thousands of weapons would be expensive to treat and dispose. Therefore, a dry method of purification is highly desirable. Recently, a dry gallium removal research program commenced. Based on initial calculations, it appeared that a particular form of gallium (gallium suboxide, Ga{sub 2}O) could be evaporated from plutonium oxide in the presence of a reducing agent, such as small amounts of hydrogen dry gas within an inert environment. Initial tests using ceria-based material (as a surrogate for PuO{sub 2}) showed that thermally-induced gallium removal (TIGR) from small samples (on the order of one gram) was indeed viable. Because of the expense and difficulty of optimizing TIGR from plutonium dioxide, TIGR optimization tests using ceria have continued. This document details the relationship between the ceria surrogate tests and those conducted using plutonia.

  8. Materials Science and Engineering B54 (1998) 207209 Growth of gallium phosphide layers by chemical beam epitaxy on

    E-Print Network [OSTI]

    Dietz, Nikolaus

    1998-01-01

    Materials Science and Engineering B54 (1998) 207­209 Letter Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates V. Narayanan a, *, N. Sukidi c , Chimin Hu b , N. Dietz c , K.J. Bachmann c , S. Mahajan a , S. Shingubara d a Department of Chemical, Bio

  9. Scanning Tunneling Microscopy and Surface Simulation of Zinc-Blende GaN(001) Intrinsic 4 Reconstruction: Linear Gallium Tetramers?

    E-Print Network [OSTI]

    Reconstruction: Linear Gallium Tetramers? Hamad A. AL-Brithen, Rong Yang, Muhammad B. Haider, Costel Constantin and occupied states, in agreement with surface simulations based on the 4 1 linear tetramer model the existence of linear Ga tetramers. DOI: PACS numbers: 68.35.Bs, 68.37.Ef, 73.20.At Based on both fundamental

  10. Boron nitride nanosheets as oxygen-atom corrosion protective coatings

    SciTech Connect (OSTI)

    Yi, Min; Shen, Zhigang; Zhao, Xiaohu; Liang, Shuaishuai; Liu, Lei

    2014-04-07

    The research of two-dimensional nanomaterials for anticorrosion applications is just recently burgeoning. Herein, we demonstrate the boron nitride nanosheets (BNNSs) coatings for protecting polymer from oxygen-atom corrosion. High-quality BNNSs, which are produced by an effective fluid dynamics method with multiple exfoliation mechanisms, can be assembled into coatings with controlled thickness by vacuum filtration. After exposed in atom oxygen, the naked polymer is severely corroded with remarkable mass loss, while the BNNSs-coated polymer remains intact. Barrier and bonding effects of the BNNSs are responsible for the coating's protective performance. These preliminary yet reproducible results pave a way for resisting oxygen-atom corrosion.

  11. Preparation of superhydrophobic nanodiamond and cubic boron nitride films

    SciTech Connect (OSTI)

    Zhou, Y. B.; Liu, W. M.; Wang, P. F.; Yang, Y.; Ye, Q.; He, B.; Pan, X. J.; Zhang, W. J.; Bello, I.; Lee, S. T.; Zou, Y. S.

    2010-09-27

    Superhydrophobic surfaces were achieved on the hardest and the second hardest materials, diamond and cubic boron nitride (cBN) films. Various surface nanostructures of nanocrystalline diamond (ND) and cBN films were constructed by carrying out bias-assisted reactive ion etching in hydrogen/argon plasmas; and it is shown that surface nanostructuring may enhance dramatically the hydrophobicity of ND and cBN films. Together with surface fluorination, superhydrophobic ND and cBN surfaces with a contact angle greater than 150 deg. and a sliding angle smaller than 10 deg. were demonstrated. The origin of hydrophobicity enhancement is discussed based on the Cassie model.

  12. Field emission characteristics from graphene on hexagonal boron nitride

    SciTech Connect (OSTI)

    Yamada, Takatoshi, E-mail: takatoshi-yamada@aist.go.jp [National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan); Masuzawa, Tomoaki; Ebisudani, Taishi; Okano, Ken [International Christian University, 3-10-2 Osawa, Mitaka, Tokyo 181-8585 (Japan); Taniguchi, Takashi [National Institute for Material Science (NIMS), 1-1-1 Namiki, Tsukuba 305-0044 (Japan)

    2014-06-02

    An attempt has been made to utilize uniquely high electron mobility of graphene on hexagonal boron nitride (h-BN) to electron emitter. The field emission property of graphene/h-BN/Si structure has shown enhanced threshold voltage and emission current, both of which are key to develop novel vacuum nanoelectronics devices. The field emission property was discussed along with the electronic structure of graphene investigated by Fowler-Nordheim plot and ultraviolet photoelectron spectroscopy. The result suggested that transferring graphene on h-BN modified its work function, which changed field emission mechanism. Our report opens up a possibility of graphene-based vacuum nanoelectronics devices with tuned work function.

  13. Method of nitriding niobium to form a superconducting surface

    DOE Patents [OSTI]

    Kelley, Michael J.; Klopf, John Michael; Singaravelu, Senthilaraja

    2014-08-19

    A method of forming a delta niobium nitride .delta.-NbN layer on the surface of a niobium object including cleaning the surface of the niobium object; providing a treatment chamber; placing the niobium object in the treatment chamber; evacuating the chamber; passing pure nitrogen into the treatment chamber; focusing a laser spot on the niobium object; delivering laser fluences at the laser spot until the surface of the niobium object reaches above its boiling temperature; and rastering the laser spot over the surface of the niobium object.

  14. The influence of molecular orientation on organic bulk heterojunction...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The influence of molecular orientation on organic bulk heterojunction solar cells The influence of molecular orientation on organic bulk heterojunction solar cells Print Monday, 28...

  15. THRESHOLD RADIOACTIVITY FOR BULK FOOD SAMPLES BY GAMMA SPECTROSCOPY...

    Office of Scientific and Technical Information (OSTI)

    THRESHOLD RADIOACTIVITY FOR BULK FOOD SAMPLES BY GAMMA SPECTROSCOPY Citation Details In-Document Search Title: THRESHOLD RADIOACTIVITY FOR BULK FOOD SAMPLES BY GAMMA SPECTROSCOPY...

  16. Nanostructured High-Temperature Bulk Thermoelectric Energy Conversion...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    High-Temperature Bulk Thermoelectric Energy Conversion for Efficient Automotive Waste Heat Recovery Nanostructured High-Temperature Bulk Thermoelectric Energy Conversion for...

  17. High Heat Flux Thermoelectric Module Using Standard Bulk Material...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Heat Flux Thermoelectric Module Using Standard Bulk Material High Heat Flux Thermoelectric Module Using Standard Bulk Material Presents high heat flux thermoelectric module design...

  18. Micro benchtop optics by bulk silicon micromachining

    DOE Patents [OSTI]

    Lee, Abraham P. (Walnut Creek, CA); Pocha, Michael D. (Livermore, CA); McConaghy, Charles F. (Livermore, CA); Deri, Robert J. (Pleasanton, CA)

    2000-01-01

    Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

  19. Nitride and Oxynitride Based Phosphors for Solid State Lighting

    SciTech Connect (OSTI)

    Tian, Yongchi

    2011-10-15

    The objective of the project is to advance the technology of the Lightscape Materials Inc. (Lightscape) proprietary nitride and oxynitride phosphors for solid state lighting (SSL) from the current level of maturity of applied research to advanced engineering development. This objective will be accomplished by optimizing the novel nitride and oxynitride phosphors, whose formulations are listed in Table 1, and establishing cost-effective preparation processes for the phosphors. The target performances of the phosphors are: • High luminescence efficiency: Quantum Yield = 90%. • Superior thermal stability of luminescence: Thermal Quenching Loss <10% at 150 °C. • Superior environmental stability: Luminescence Maintenance >90% after 5,000 hours at 85 °C and 85% relative humidity. • Scattering loss <10%. • Cost-effective preparation processes. The resulting phosphor materials and their preparation processes are anticipated to be a drop-in component for product development paths undertaken by LED lamp makers in the SSL industry. Upon program completion, Lightscape will target market insertion that enables high efficacy, high color rendering index (CRI), high thermal stability and long lifetime LED-based lighting products for general illumination that realizes substantial energy savings.

  20. High upper critical field in disordered niobium nitride superconductor

    SciTech Connect (OSTI)

    Baskaran, R., E-mail: baskaran@igcar.gov.in; Thanikai Arasu, A. V.; Amaladass, E. P.; Janawadkar, M. P. [Materials Science Group, IGCAR, Kalpakkam-603102 (India)

    2014-10-28

    Superconducting Niobium Nitride thin films have been deposited on glass, aluminum nitride buffered glass, and oxidized silicon substrates by reactive DC magnetron sputtering at ambient substrate temperatures. The crystal structure of these thin films has been determined to be cubic fcc B1 structure by Glancing Incidence X-Ray Diffraction analysis. The superconducting transition temperatures of the thin films were measured to be greater than 11.6?K with a maximum of 13.4?K. The negative temperature coefficient of resistance observed in these thin films indicates the presence of disorder. Magneto-resistance measurements have been carried out on these thin films patterned into standard four probe geometry upto a maximum magnetic field of 12?T for two films and upto 15?T for the other two films. The dependence of transition temperature on the applied field is analyzed to estimate the upper critical field. The upper critical field for most of the films was estimated to exceed 35?T, while one of the most disordered films had an estimated upper critical field greater than 70?T.

  1. Thermal relics in cosmology with bulk viscosity

    E-Print Network [OSTI]

    A. Iorio; G. Lambiase

    2014-11-28

    In this paper we discuss some consequences of cosmological models in which the primordial cosmic matter is described by a relativistic imperfect fluid. The latter takes into account the dissipative effects (bulk viscosity) arising from different cooling rates of the fluid components in the expanding Universe. We discuss, in particular, the effects of the bulk viscosity on Big Bang Nucleosynthesis and on the thermal relic abundance of particles, looking at recent results of PAMELA experiment. The latter has determined an anomalous excess of positron events, that cannot be explained by the conventional cosmology and particle physics.

  2. Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen

    SciTech Connect (OSTI)

    Sallis, S.; Williams, D. S.; Butler, K. T.; Walsh, A.; Quackenbush, N. F.; Junda, M.; Podraza, N. J.; Fischer, D. A.; Woicik, J. C.; White, B. E.; Piper, L. F. J.

    2014-06-09

    The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

  3. Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module

    SciTech Connect (OSTI)

    Silverman, T. J.; Deceglie, M. G.; Marion, B.; Cowley, S.; Kayes, B.; Kurtz, S.

    2013-06-01

    We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.

  4. Optoelectronic and low temperature thermoelectric studies on nanostructured thin films of silver gallium selenide

    SciTech Connect (OSTI)

    Jacob, Rajani, E-mail: reenatara@rediffmail.com; Philip, Rachel Reena, E-mail: reenatara@rediffmail.com; Nazer, Sheeba, E-mail: reenatara@rediffmail.com; Abraham, Anitha, E-mail: reenatara@rediffmail.com; Nair, Sinitha B., E-mail: reenatara@rediffmail.com [Thin film research lab, U.C. College, Aluva, Kerala (India); Pradeep, B.; Urmila, K. S. [Solid State Physics Laboratory, Cochin University of Science and Technology, Cochin (India); Okram, G. S. [UGC-DAE CSR, Khandwa Road, Indore-452 001, Madhya Pradesh (India)

    2014-01-28

    Polycrystalline thin films of silver gallium selenide were deposited on ultrasonically cleaned soda lime glass substrates by multi-source vacuum co-evaporation technique. The structural analysis done by X-ray diffraction ascertained the formation of nano structured tetragonal chalcopyrite thin films. The compound formation was confirmed by X-ray photo-electron spectroscopy. Atomic force microscopic technique has been used for surface morphological analysis. Direct allowed band gap ?1.78eV with high absorption coefficient ?10{sup 6}/m was estimated from absorbance spectra. Low temperature thermoelectric effects has been investigated in the temperature range 80–330K which manifested an unusual increase in Seebeck coefficient with negligible phonon drag toward the very low and room temperature regime. The electrical resistivity of these n-type films was assessed to be ?2.6?m and the films showed good photo response.

  5. Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters

    SciTech Connect (OSTI)

    Muhammad, R.; Ahamad, R.; Ibrahim, Z.; Othaman, Z.

    2014-03-05

    Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity.

  6. Tunneling characteristics in chemical vapor deposited graphene–hexagonal boron nitride–graphene junctions

    SciTech Connect (OSTI)

    Roy, T.; Hesabi, Z. R.; Joiner, C. A.; Vogel, E. M. [School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332 (United States); Liu, L.; Gu, G. [Department of Electrical Engineering and Computer Science, University of Tennessee, 1520 Middle Drive, Knoxville, Tennessee 37996 (United States); Barrera, S. de la; Feenstra, R. M. [Department of Physics, Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, Pennsylvania 15213 (United States); Chakrabarti, B. [School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332 (United States); Department of Materials Science and Engineering, University of Texas at Dallas, 800 West Campbell Rd., Richardson, Texas 75080 (United States)

    2014-03-24

    Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate graphene–hexagonal boron nitride–graphene symmetric field effect transistors. Gate control of the tunneling characteristics is observed similar to previously reported results for exfoliated graphene–hexagonal boron nitride–graphene devices. Density-of-states features are observed in the tunneling characteristics of the devices, although without large resonant peaks that would arise from lateral momentum conservation. The lack of distinct resonant behavior is attributed to disorder in the devices, and a possible source of the disorder is discussed.

  7. Decision Models for Bulk Energy Transportation

    E-Print Network [OSTI]

    Tesfatsion, Leigh

    Decision Models for Bulk Energy Transportation Networks James D. McCalley August 23, 2005 #12, and Electric Transportation Systems (1) What energy flow patterns would yield significantly improved energy (ISU - Randy Larabee) · City of Ames (Ames - Merlin Hove) · MidAmerican Energy (Des Moines - Alan O

  8. Decision Models for Bulk Energy Transportation Networks

    E-Print Network [OSTI]

    Tesfatsion, Leigh

    natural gas pipeline capacity from gulf to NE? Production: How would major investment in a specific/trading restrictions? What would be impacts on fuel and electricity markets? How do high natural gas prices drive1 Decision Models for Bulk Energy Transportation Networks Electrical Engineering Professor Jim Mc

  9. INVESTIGATION OF BULK POWER NORTHEAST REGION

    E-Print Network [OSTI]

    Laughlin, Robert B.

    INVESTIGATION OF BULK POWER MARKETS NORTHEAST REGION November 1, 2000 The analyses and conclusions Activities and Retail Competition . . . . . . . . . . . . . . . . . . 1-49 5. Prices, Market Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-13 A. Overview of Product Markets, Market Design and Pricing Rules . . . . . . . 1-15 1. Energy

  10. Proton exchange membrane fuel cells with chromium nitride nanocrystals as electrocatalysts

    E-Print Network [OSTI]

    Zhong, Hexiang; Chen, Xiaobo; Zhang, Huamin; Wang, Meiri; Mao, Samuel S.

    2007-01-01

    S. Srinivasan, V. Antonucci, Fuel Cells 1, 133 (2001). 15 Y.Proton exchange membrane fuel cells with chromium nitridePolymer electrolyte membrane fuel cells (PEMFCs) are energy

  11. Photon-induced tunneling in graphene-boron nitride-graphene heterostructures

    E-Print Network [OSTI]

    Nair, Nityan

    2013-01-01

    Graphene is a material that has generated much interest due to its many unique electronic and optical properties. In this work, we present optoelectronic measurements performed on ultrathin graphene-boron nitride-graphene ...

  12. Method of nitriding, carburizing, or oxidizing refractory metal articles using microwaves

    DOE Patents [OSTI]

    Holcombe, Cressie E. (Knoxville, TN); Dykes, Norman L. (Oak Ridge, TN); Tiegs, Terry N. (Lenoir City, TN)

    1992-01-01

    A method of nitriding an article of refractory-nitride-forming metal or metalloids. A consolidated metal or metalloid article is placed inside a microwave oven and nitrogen containing gas is introduced into the microwave oven. The metal or metalloid article is heated to a temperature sufficient to react the metal or metalloid with the nitrogen by applying a microwave energy within the microwave oven. The metal or metalloid article is maintained at that temperature for a period of time sufficient to convert the article of metal or metalloid to an article of refractory nitride. in addition, a method of applying a coating, such as a coating of an oxide, a carbide, or a carbo-nitride, to an article of metal or metalloid by microwave heating.

  13. Single-Crystalline Mesoporous Molybdenum Nitride Nanowires with Improved Electrochemical Properties

    E-Print Network [OSTI]

    Cao, Guozhong

    , and catalytic properties.1­4 Among the transition-metal com- pounds, transition-metal nitrides are regarded, reforming catalyst, energy storage devices, and electrical applications.5­7 In particular, the molybdenum

  14. Electronic structure analyses and activation studies of a dinitrogen-derived terminal nitride of molybdenum

    E-Print Network [OSTI]

    Sceats, Emma Louise, 1978-

    2004-01-01

    Chapter 1: Complexes obtained by electrophilic attack on a dinitrogen-derived terminal molybdenum nitride: Electronic structure analysis by solid state CP/MAS ą?N NMR in combination ... Chapter 2. Carbene chemistry in the ...

  15. Process for preparing transition metal nitrides and transition metal carbonitrides and their reaction intermediates

    DOE Patents [OSTI]

    Maya, Leon (Oak Ridge, TN)

    1988-05-24

    A process for making ammonolytic precursors to nitride and carbonitride ceramics. Extreme reaction conditions are not required and the precursor is a powder-like substance that produces ceramics of improved purity and morphology upon pyrolysis.

  16. Precursors in the preparation of transition metal nitrides and transition metal carbonitrides and their reaction intermediates

    DOE Patents [OSTI]

    Maya, Leon (Oak Ridge, TN)

    1991-01-01

    A process for making ammonolytic precursors to nitride and carbonitride ceramics. Extreme reaction conditions are not required and the precursor is a powder-like substance that produces ceramics of improved purity and morphology upon pyrolysis.

  17. Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N. (Littleton, CO); Hasoon, Falah S. (Arvada, CO); Wiesner, Holm (Golden, CO); Keane, James (Lakewood, CO); Noufi, Rommel (Golden, CO); Ramanathan, Kannan (Golden, CO)

    1999-02-16

    A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

  18. Impurity-induced disorder in III-nitride materials and devices

    DOE Patents [OSTI]

    Wierer, Jr., Jonathan J; Allerman, Andrew A

    2014-11-25

    A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces.

  19. The electron beam hole drilling of silicon nitride thin films

    SciTech Connect (OSTI)

    Howitt, D. G.; Chen, S. J.; Gierhart, B. C.; Smith, R. L.; Collins, S. D.

    2008-01-15

    The mechanism by which an intense electron beam can produce holes in thin films of silicon nitride has been investigated using a combination of in situ electron energy loss spectrometry and electron microscopy imaging. A brief review of electron beam interactions that lead to material loss in different materials is also presented. The loss of nitrogen and silicon decreases with decreasing beam energy and although still observable at a beam energy of 150 keV ceases completely at 120 keV. The linear behavior of the loss rate coupled with the energy dependency indicates that the process is primarily one of direct displacement, involving the sputtering of atoms from the back surface of the specimen with the rate controlling mechanism being the loss of nitrogen.

  20. Enhanced thermoelectric properties in hybrid graphene-boron nitride nanoribbons

    E-Print Network [OSTI]

    Kaike Yang; Yuanping Chen; Roberto D'Agosta; Yuee Xie; Jianxin Zhong; Angel Rubio

    2012-04-06

    The thermoelectric properties of hybrid graphene-boron nitride nanoribbons (BCNNRs) are investigated using the non-equilibrium Green's function (NEGF) approach. We find that the thermoelectric figure of merit (ZT) can be remarkably enhanced by periodically embedding hexagonal BN (h-BN) into graphene nanoribbons (GNRs). Compared to pristine GNRs, the ZT for armchair-edged BCNNRs with width index 3p+2 is enhanced up to 10~20 times while the ZT of nanoribbons with other widths is enhanced just by 1.5~3 times. As for zigzag-edge nanoribbons, the ZT is enhanced up to 2~3 times. This improvement comes from the combined increase in the Seebeck coefficient and the reduction in the thermal conductivity outweighing the decrease in the electrical conductance. In addition, the effect of component ratio of h-BN on the thermoelectric transport properties is discussed. These results qualify BCNNRs as a promising candidate for building outstanding thermoelectric devices.

  1. Use of additives to improve microstructures and fracture resistance of silicon nitride ceramics

    DOE Patents [OSTI]

    Becher, Paul F. (Oak Ridge, TN); Lin, Hua-Tay (Oak Ridge, TN)

    2011-06-28

    A high-strength, fracture-resistant silicon nitride ceramic material that includes about 5 to about 75 wt-% of elongated reinforcing grains of beta-silicon nitride, about 20 to about 95 wt-% of fine grains of beta-silicon nitride, wherein the fine grains have a major axis of less than about 1 micron; and about 1 to about 15 wt-% of an amorphous intergranular phase comprising Si, N, O, a rare earth element and a secondary densification element. The elongated reinforcing grains have an aspect ratio of 2:1 or greater and a major axis measuring about 1 micron or greater. The elongated reinforcing grains are essentially isotropically oriented within the ceramic microstructure. The silicon nitride ceramic exhibits a room temperature flexure strength of 1,000 MPa or greater and a fracture toughness of 9 MPa-m.sup.(1/2) or greater. The silicon nitride ceramic exhibits a peak strength of 800 MPa or greater at 1200 degrees C. Also included are methods of making silicon nitride ceramic materials which exhibit the described high flexure strength and fracture-resistant values.

  2. Microfabricated bulk wave acoustic bandgap device

    DOE Patents [OSTI]

    Olsson, Roy H. (Albuquerque, NM); El-Kady, Ihab F. (Albuquerque, NM); McCormick, Frederick (Albuquerque, NM); Fleming, James G. (Albuquerque, NM); Fleming, legal representative, Carol (Albuquerque, NM)

    2010-11-23

    A microfabricated bulk wave acoustic bandgap device comprises a periodic two-dimensional array of scatterers embedded within the matrix material membrane, wherein the scatterer material has a density and/or elastic constant that is different than the matrix material and wherein the periodicity of the array causes destructive interference of the acoustic wave within an acoustic bandgap. The membrane can be suspended above a substrate by an air or vacuum gap to provide acoustic isolation from the substrate. The device can be fabricated using microelectromechanical systems (MEMS) technologies. Such microfabricated bulk wave phononic bandgap devices are useful for acoustic isolation in the ultrasonic, VHF, or UHF regime (i.e., frequencies of order 1 MHz to 10 GHz and higher, and lattice constants of order 100 .mu.m or less).

  3. Microfabricated bulk wave acoustic bandgap device

    DOE Patents [OSTI]

    Olsson, Roy H.; El-Kady, Ihab F.; McCormick, Frederick; Fleming, James G.; Fleming, Carol

    2010-06-08

    A microfabricated bulk wave acoustic bandgap device comprises a periodic two-dimensional array of scatterers embedded within the matrix material membrane, wherein the scatterer material has a density and/or elastic constant that is different than the matrix material and wherein the periodicity of the array causes destructive interference of the acoustic wave within an acoustic bandgap. The membrane can be suspended above a substrate by an air or vacuum gap to provide acoustic isolation from the substrate. The device can be fabricated using microelectromechanical systems (MEMS) technologies. Such microfabricated bulk wave phononic bandgap devices are useful for acoustic isolation in the ultrasonic, VHF, or UHF regime (i.e., frequencies of order 1 MHz to 10 GHz and higher, and lattice constants of order 100 .mu.m or less).

  4. Modeling direct interband tunneling. I. Bulk semiconductors

    SciTech Connect (OSTI)

    Pan, Andrew; Chui, Chi On

    2014-08-07

    Interband tunneling is frequently studied using the semiclassical Kane model, despite uncertainty about its validity. Revisiting the physical basis of this formula, we find that it neglects coupling to other bands and underestimates transverse tunneling. As a result, significant errors can arise at low and high fields for small and large gap materials, respectively. We derive a simple multiband tunneling model to correct these defects analytically without arbitrary parameters. Through extensive comparison with band structure and quantum transport calculations for bulk InGaAs, InAs, and InSb, we probe the accuracy of the Kane and multiband formulas and establish the superiority of the latter. We also show that the nonlocal average electric field should be used when applying either of these models to nonuniform potentials. Our findings are important for efficient analysis and simulation of bulk semiconductor devices involving tunneling.

  5. DEMONSTRATION BULK VITRIFICATION SYSTEM (DBVS) EXTERNAL REVIEW

    SciTech Connect (OSTI)

    HONEYMAN, J.O.

    2007-02-08

    The Hanford mission to retrieve and immobilize 53 million gallons of radioactive waste from 177 underground storage tanks will be accomplished using a combination of processing by the waste treatment plant currently under construction, and a supplemental treatment that would process low-activity waste. Under consideration for this treatment is bulk vitrification, a versatile joule-heated melter technology which could be deployed in the tank farms. The Department proposes to demonstrate this technology under a Research, Development and Demonstration (RD and D) permit issued by the Washington State Department of Ecology using both non-radioactive simulant and blends of actual tank waste. From the demonstration program, data would be obtained on cost and technical performance to enable a decision on the potential use of bulk vitrification as the supplemental treatment technology for Hanford. An independent review by sixteen subject matter experts was conducted to assure that the technical basis of the demonstration facility design would be adequate to meet the objectives of the Demonstration Bulk Vitrification System (DBVS) program. This review explored all aspects of the program, including flowsheet chemistry, project risk, vitrification, equipment design and nuclear safety, and was carried out at a time when issues can be identified and corrected. This paper describes the mission need, review approach, technical recommendations and follow-on activities for the DBVS program.

  6. Hydrogen isotope separation utilizing bulk getters

    DOE Patents [OSTI]

    Knize, Randall J. (Los Angeles, CA); Cecchi, Joseph L. (Lawrenceville, NJ)

    1991-01-01

    Tritium and deuterium are separated from a gaseous mixture thereof, derived from a nuclear fusion reactor or some other source, by providing a casing with a bulk getter therein for absorbing the gaseous mixture to produce an initial loading of the getter, partially desorbing the getter to produce a desorbed mixture which is tritium-enriched, pumping the desorbed mixture into a separate container, the remaining gaseous loading in the getter being deuterium-enriched, desorbing the getter to a substantially greater extent to produce a deuterium-enriched gaseous mixture, and removing the deuterium-enriched mixture into another container. The bulk getter may comprise a zirconium-aluminum alloy, or a zirconium-vanadium-iron alloy. The partial desorption may reduce the loading by approximately fifty percent. The basic procedure may be extended to produce a multistage isotope separator, including at least one additional bulk getter into which the tritium-enriched mixture is absorbed. The second getter is then partially desorbed to produce a desorbed mixture which is further tritium-enriched. The last-mentioned mixture is then removed from the container for the second getter, which is then desorbed to a substantially greater extent to produce a desorbed mixture which is deuterium-enriched. The last-mentioned mixture is then removed so that the cycle can be continued and repeated. The method of isotope separation is also applicable to other hydrogen isotopes, in that the method can be employed for separating either deuterium or tritium from normal hydrogen.

  7. Hydrogen isotope separation utilizing bulk getters

    DOE Patents [OSTI]

    Knize, R.J.; Cecchi, J.L.

    1991-08-20

    Tritium and deuterium are separated from a gaseous mixture thereof, derived from a nuclear fusion reactor or some other source, by providing a casing with a bulk getter therein for absorbing the gaseous mixture to produce an initial loading of the getter, partially desorbing the getter to produce a desorbed mixture which is tritium-enriched, pumping the desorbed mixture into a separate container, the remaining gaseous loading in the getter being deuterium-enriched, desorbing the getter to a substantially greater extent to produce a deuterium-enriched gaseous mixture, and removing the deuterium-enriched mixture into another container. The bulk getter may comprise a zirconium-aluminum alloy, or a zirconium-vanadium-iron alloy. The partial desorption may reduce the loading by approximately fifty percent. The basic procedure may be extended to produce a multistage isotope separator, including at least one additional bulk getter into which the tritium-enriched mixture is absorbed. The second getter is then partially desorbed to produce a desorbed mixture which is further tritium-enriched. The last-mentioned mixture is then removed from the container for the second getter, which is then desorbed to a substantially greater extent to produce a desorbed mixture which is deuterium-enriched. The last-mentioned mixture is then removed so that the cycle can be continued and repeated. The method of isotope separation is also applicable to other hydrogen isotopes, in that the method can be employed for separating either deuterium or tritium from normal hydrogen. 4 figures.

  8. Hydrogen isotope separation utilizing bulk getters

    DOE Patents [OSTI]

    Knize, Randall J. (Los Angeles, CA); Cecchi, Joseph L. (Lawrenceville, NJ)

    1990-01-01

    Tritium and deuterium are separated from a gaseous mixture thereof, derived from a nuclear fusion reactor or some other source, by providing a casing with a bulk getter therein for absorbing the gaseous mixture to produce an initial loading of the getter, partially desorbing the getter to produce a desorbed mixture which is tritium-enriched, pumping the desorbed mixture into a separate container, the remaining gaseous loading in the getter being deuterium-enriched, desorbing the getter to a substantially greater extent to produce a deuterium-enriched gaseous mixture, and removing the deuterium-enriched mixture into another container. The bulk getter may comprise a zirconium-aluminum alloy, or a zirconium-vanadium-iron alloy. The partial desorption may reduce the loading by approximately fifty percent. The basic procedure may be extended to produce a multistage isotope separator, including at least one additional bulk getter into which the tritium-enriched mixture is absorbed. The second getter is then partially desorbed to produce a desorbed mixture which is further tritium-enriched. The last-mentioned mixture is then removed from the container for the second getter, which is then desorbed to a substantially greater extent to produce a desorbed mixture which is deuterium-enriched. The last-mentioned mixture is then removed so that the cycle can be continued and repeated. The method of isotope separation is also applicable to other hydrogen isotopes, in that the method can be employed for separating either deuterium or tritium from normal hydrogen.

  9. A new class of high ZT doped bulk nanothermoelectrics through...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    new class of high ZT doped bulk nanothermoelectrics through bottom-up synthesis A new class of high ZT doped bulk nanothermoelectrics through bottom-up synthesis Reports on...

  10. Bulk Energy Storage Webinar Rescheduled for February 9, 2012...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Bulk Energy Storage Webinar Rescheduled for February 9, 2012 Bulk Energy Storage Webinar Rescheduled for February 9, 2012 February 1, 2012 - 12:48pm Addthis The U.S. Department of...

  11. Composition, structure, and performance of nanocrystal bulk heterojunction photovoltaics

    E-Print Network [OSTI]

    Huang, Kevin J. (Kevin Joon-Ming)

    2015-01-01

    We describe the fabrication and study of bulk heterojunction solar cells composed of PbS quantum dots and TiO2. In particular, we study the effects that bulk heterojunction composition and structure have on resulting device ...

  12. Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires

    SciTech Connect (OSTI)

    Xia, Minggang, E-mail: xiamg@mail.xjtu.edu.cn [Laboratory of Nanostructure and its Physics Properties, Department of Optical Information Science and Technology, Department of Applied Physics, and MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter, School of Science, Xi'an Jiaotong University, 710049 China (China); Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Cheng, Zhaofang; Han, Jinyun; Zhang, Shengli [Laboratory of Nanostructure and its Physics Properties, Department of Optical Information Science and Technology, Department of Applied Physics, and MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter, School of Science, Xi'an Jiaotong University, 710049 China (China); Zheng, Minrui [Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542 (Singapore); Sow, Chorng-Haur [Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542 (Singapore); National University of Singapore Nanoscience and Nanotechnology Initiative, National University of Singapore, Singapore 117542 (Singapore); Thong, John T. L. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Li, Baowen [Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542 (Singapore); National University of Singapore Nanoscience and Nanotechnology Initiative, National University of Singapore, Singapore 117542 (Singapore); Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

    2014-05-15

    The electrical and thermal conductivities are measured for individual zinc oxide (ZnO) nanowires with and without gallium ion (Ga{sup +}) implantation at room temperature. Our results show that Ga{sup +} implantation enhances electrical conductivity by one order of magnitude from 1.01 × 10{sup 3} ?{sup ?1}m{sup ?1} to 1.46 × 10{sup 4} ?{sup ?1}m{sup ?1} and reduces its thermal conductivity by one order of magnitude from 12.7 Wm{sup ?1}K{sup ?1} to 1.22 Wm{sup ?1}K{sup ?1} for ZnO nanowires of 100 nm in diameter. The measured thermal conductivities are in good agreement with those in theoretical simulation. The increase of electrical conductivity origins in electron donor doping by Ga{sup +} implantation and the decrease of thermal conductivity is due to the longitudinal and transverse acoustic phonons scattering by Ga{sup +} point scattering. For pristine ZnO nanowires, the thermal conductivity decreases only two times when its diameter reduces from 100 nm to 46 nm. Therefore, Ga{sup +}-implantation may be a more effective method than diameter reduction in improving thermoelectric performance.

  13. Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

    SciTech Connect (OSTI)

    Wampler, William R.; Myers, Samuel M.

    2014-02-01

    A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defects within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.

  14. Gallium Solar Neutrino Experiments: Absorption Cross sections, Neutrino spectra, and Predicted Event Rates

    E-Print Network [OSTI]

    John N. Bahcall

    1997-10-28

    Neutrino absorption cross sections for 71Ga are calculated for all solar neutrino sources with standard energy spectra, and for laboratory sources of 51Cr and 37Ar; the calculations include, where appropriate, the thermal energy of fusing solar ions and use improved nuclear and atomic data. The ratio, R, of measured (in GALLEX and SAGE) to calculated 51Cr capture rate is R = 0.95 +/- 0.07 (exp)} + ^{+0.04}_{-0.03} (theory). Cross sections are also calculated for specific neutrino energies chosen so that a spline fit determines accurately the event rates in a gallium detector even if new physics changes the energy spectrum of solar neutrinos. Theoretical uncertainties are estimated for cross sections at specific energies and for standard neutrino energy spectra. Standard energy spectra are presented for pp and CNO neutrino sources in the appendices. Neutrino fluxes predicted by standard solar models, corrected for diffusion, have been in the range 120 SNU to 141 SNU since 1968.

  15. Revealing the Preferred Interlayer Orientations and Stackings of Two-Dimensional Bilayer Gallium Selenide Crystals

    SciTech Connect (OSTI)

    Li, Xufan; Basile Carrasco, Leonardo A; Yoon, Mina; Ma, Cheng; Puretzky, Alexander A; Lee, Jaekwang; Idrobo Tapia, Juan Carlos; Chi, Miaofang; Rouleau, Christopher M; Geohegan, David B; Xiao, Kai

    2015-01-01

    Characterizing and controlling the interlayer orientations and stacking order of bilayer two-dimensional (2D) crystals and van der Waals (vdW) heterostructure is crucial to optimize their electrical and optoelectronic properties. The four polymorphs of layered gallium selenide (GaSe) that result from different layer stacking provide an ideal platform to study the stacking configurations in bilayer 2D crystals. Here, through a controllable vapor-phase deposition method we selectively grow bilayer GaSe crystals and investigate their two preferred 0 or 60 interlayer rotations. The commensurate stacking configurations (AA and AB-stacking) in as-grown 2D bilayer GaSe crystals are clearly observed at the atomic scale and the Ga-terminated edge structure are identified for the first time by using atomic-resolution scanning transmission electron microscopy (STEM). Theoretical analysis of the interlayer coupling energetics vs. interlayer rotation angle reveals that the experimentally-observed orientations are energetically preferred among the bilayer GaSe crystal polytypes. The combined experimental and theoretical characterization of the GaSe bilayers afforded by these growth studies provide a pathway to reveal the atomistic relationships in interlayer orientations responsible for the electronic and optical properties of bilayer 2D crystals and vdW heterostructures.

  16. Improving the bulk data transfer experience

    SciTech Connect (OSTI)

    Guok, Chin; Guok, Chin; Lee, Jason R.; Berket, Karlo

    2008-05-07

    Scientific computations and collaborations increasingly rely on the network to provide high-speed data transfer, dissemination of results, access to instruments, support for computational steering, etc. The Energy Sciences Network is establishing a science data network to provide user driven bandwidth allocation. In a shared network environment, some reservations may not be granted due to the lack of available bandwidth on any single path. In many cases, the available bandwidth across multiple paths would be sufficient to grant the reservation. In this paper we investigate how to utilize the available bandwidth across multiple paths in the case of bulk data transfer.

  17. RAPID/Bulk Transmission | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource HistoryPotentialRuralUtilityScalePVGeneration JumpPublic UtilityQuintasNEPA Timelines <Bulk Transmission

  18. RAPID/BulkTransmission | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource HistoryPotentialRuralUtilityScalePVGeneration JumpPublic UtilityQuintasNEPA Timelines <Bulk

  19. Process for producing silicon nitride based articles of high fracture toughness and strength

    DOE Patents [OSTI]

    Huckabee, M.; Buljan, S.T.; Neil, J.T.

    1991-09-10

    A process for producing a silicon nitride-based article of improved fracture toughness and strength is disclosed. The process involves densifying to at least 98% of theoretical density a mixture including (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 [mu]m and a surface area of about 8-12 m[sup 2]/g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 [mu]m and a surface area of about 2-4 m[sup 2]/g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. Optionally, the mixture may be blended with a binder and injection molded to form a green body, which then may be densified by, for example, hot isostatic pressing.

  20. Process for producing silicon nitride based articles of high fracture toughness and strength

    DOE Patents [OSTI]

    Huckabee, Marvin (Marlboro, MA); Buljan, Sergej-Tomislav (Acton, MA); Neil, Jeffrey T. (Acton, MA)

    1991-01-01

    A process for producing a silicon nitride-based article of improved fracture toughness and strength. The process involves densifying to at least 98% of theoretical density a mixture including (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 .mu.m and a surface area of about 8-12 m.sup.2 /g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 .mu.m and a surface area of about 2-4 m.sup.2 /g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. Optionally, the mixture may be blended with a binder and injection molded to form a green body, which then may be densified by, for example, hot isostatic pressing.

  1. Steady State Sputtering Yields and Surface Compositions of Depleted Uranium and Uranium Carbide bombarded by 30 keV Gallium or 16 keV Cesium Ions.

    SciTech Connect (OSTI)

    Siekhaus, W. J.; Teslich, N. E.; Weber, P. K.

    2014-10-23

    Depleted uranium that included carbide inclusions was sputtered with 30-keV gallium ions or 16-kev cesium ions to depths much greater than the ions’ range, i.e. using steady-state sputtering. The recession of both the uranium’s and uranium carbide’s surfaces and the ion corresponding fluences were used to determine the steady-state target sputtering yields of both uranium and uranium carbide, i.e. 6.3 atoms of uranium and 2.4 units of uranium carbide eroded per gallium ion, and 9.9 uranium atoms and 3.65 units of uranium carbide eroded by cesium ions. The steady state surface composition resulting from the simultaneous gallium or cesium implantation and sputter-erosion of uranium and uranium carbide were calculated to be U??Ga??, (UC)??Ga?? and U??Cs?, (UC)??Cs??, respectively.

  2. The Bulk Channel in Thermal Gauge Theories

    E-Print Network [OSTI]

    Harvey B. Meyer

    2010-02-17

    We investigate the thermal correlator of the trace of the energy-momentum tensor in the SU(3) Yang-Mills theory. Our goal is to constrain the spectral function in that channel, whose low-frequency part determines the bulk viscosity. We focus on the thermal modification of the spectral function, $\\rho(\\omega,T)-\\rho(\\omega,0)$. Using the operator-product expansion we give the high-frequency behavior of this difference in terms of thermodynamic potentials. We take into account the presence of an exact delta function located at the origin, which had been missed in previous analyses. We then combine the bulk sum rule and a Monte-Carlo evaluation of the Euclidean correlator to determine the intervals of frequency where the spectral density is enhanced or depleted by thermal effects. We find evidence that the thermal spectral density is non-zero for frequencies below the scalar glueball mass $m$ and is significantly depleted for $m\\lesssim\\omega\\lesssim 3m$.

  3. Suitability of boron-nitride single-walled nanotubes as fluid-flow conduits in nano-valve applications

    E-Print Network [OSTI]

    Grujicic, Mica

    Suitability of boron-nitride single-walled nanotubes as fluid-flow conduits in nano-valve the suitability of boron-nitride single-walled nanotubes (SWNTs) as fluid- flow conduits in the nano-valve reserved. doi:10.1016/j.apsusc.2004.11.007 #12;control nano-valve based on a silicon nano-beam actuator

  4. Graphitic carbon nitride materials: variation of structure and morphology and their use as metal-free catalysts

    E-Print Network [OSTI]

    properties of carbon nitrides, they show unexpected catalytic activity for a variety of reactions, such as for the activation of benzene, trimerization reactions, and also the activation of carbon dioxide. Model calculationsGraphitic carbon nitride materials: variation of structure and morphology and their use as metal

  5. HIGH-EFFICIENCY NITRIDE-BASED SOLID-STATE LIGHTING

    SciTech Connect (OSTI)

    Paul T. Fini; Shuji Nakamura

    2003-10-30

    In this second annual report we summarize the progress in the second-year period of Department of Energy contract DE-FC26-01NT41203, entitled ''High- Efficiency Nitride-Based Solid-State Lighting''. The two teams, from the University of California at Santa Barbara (Principle Investigator: Dr. Shuji Nakamura) and Rensselaer Polytechnic Institute (led by Dr. N. Narendran), are pursuing the goals of this contract from thin film growth, characterization, and packaging standpoints. The UCSB team has recently made significant progress in the development of light-emitting diodes (LEDs) with AlGaN active regions emitting in the ultraviolet (UV), resonant-cavity LEDs (RCLEDs), as well as lateral epitaxial overgrowth (LEO) techniques to obtain large-area non-polar GaN films with low average dislocation density. The Rensselaer team has benchmarked the performance of commercially available LED systems and has also conducted efforts to develop an optimized RCLED packaging scheme, including development of advanced epoxy encapsulant chemistries.

  6. Silicon-Nitride Platform for Narrowband Entangled Photon Generation

    E-Print Network [OSTI]

    Sven Ramelow; Alessandro Farsi; Stéphane Clemmen; Daniel Orquiza; Kevin Luke; Michal Lipson; Alexander L. Gaeta

    2015-08-18

    CMOS-compatible photonic chips are highly desirable for real-world quantum optics devices due to their scalability, robustness, and integration with electronics. Despite impressive advances using Silicon nanostructures, challenges remain in reducing their linear and nonlinear losses and in creating narrowband photons necessary for interfacing with quantum memories. Here we demonstrate the potential of the silicon nitride (Si3N4) platform by realizing an ultracompact, bright, entangled photon-pair source with selectable photon bandwidths down to 30 MHz, which is unprecedented for an integrated source. Leveraging Si3N4's moderate thermal expansion, simple temperature control of the chip enables precise wavelength stabilization and tunability without active control. Single-mode photon pairs at 1550 nm are generated at rates exceeding 107 s-1 with mW's of pump power and are used to produce time-bin entanglement. Moreover, Si3N4 allows for operation from the visible to the mid-IR, which make it highly promising for a wide range of integrated quantum photonics applications.

  7. Mechanical deformations of boron nitride nanotubes in crossed junctions

    SciTech Connect (OSTI)

    Zhao, Yadong; Chen, Xiaoming; Ke, Changhong; Park, Cheol; Fay, Catharine C.; Stupkiewicz, Stanislaw

    2014-04-28

    We present a study of the mechanical deformations of boron nitride nanotubes (BNNTs) in crossed junctions. The structure and deformation of the crossed tubes in the junction are characterized by using atomic force microscopy. Our results show that the total tube heights are reduced by 20%–33% at the crossed junctions formed by double-walled BNNTs with outer diameters in the range of 2.21–4.67?nm. The measured tube height reduction is found to be in a nearly linear relationship with the summation of the outer diameters of the two tubes forming the junction. The contact force between the two tubes in the junction is estimated based on contact mechanics theories and found to be within the range of 4.2–7.6 nN. The Young's modulus of BNNTs and their binding strengths with the substrate are quantified, based on the deformation profile of the upper tube in the junction, and are found to be 1.07?±?0.11 TPa and 0.18–0.29 nJ/m, respectively. Finally, we perform finite element simulations on the mechanical deformations of the crossed BNNT junctions. The numerical simulation results are consistent with both the experimental measurements and the analytical analysis. The results reported in this paper contribute to a better understanding of the structural and mechanical properties of BNNTs and to the pursuit of their applications.

  8. Silicon-Nitride Platform for Narrowband Entangled Photon Generation

    E-Print Network [OSTI]

    Ramelow, Sven; Clemmen, Stéphane; Orquiza, Daniel; Luke, Kevin; Lipson, Michal; Gaeta, Alexander L

    2015-01-01

    CMOS-compatible photonic chips are highly desirable for real-world quantum optics devices due to their scalability, robustness, and integration with electronics. Despite impressive advances using Silicon nanostructures, challenges remain in reducing their linear and nonlinear losses and in creating narrowband photons necessary for interfacing with quantum memories. Here we demonstrate the potential of the silicon nitride (Si3N4) platform by realizing an ultracompact, bright, entangled photon-pair source with selectable photon bandwidths down to 30 MHz, which is unprecedented for an integrated source. Leveraging Si3N4's moderate thermal expansion, simple temperature control of the chip enables precise wavelength stabilization and tunability without active control. Single-mode photon pairs at 1550 nm are generated at rates exceeding 107 s-1 with mW's of pump power and are used to produce time-bin entanglement. Moreover, Si3N4 allows for operation from the visible to the mid-IR, which make it highly promising fo...

  9. Bulk chemical and Hfâ??W isotopic consequences of incomplete accretion during planet formation

    E-Print Network [OSTI]

    Dwyer, Christina A; Nimmo, Francis; Chambers, John E

    2015-01-01

    Bulk chemical and Hf–W isotopic consequences of incompletestyle affects the bulk chemical and isotopic outcomes ofto investigate the bulk chemical and isotopic consequences

  10. Synthesis of fine-grained .alpha.-silicon nitride by a combustion process

    DOE Patents [OSTI]

    Holt, J. Birch (San Jose, CA); Kingman, Donald D. (Danville, CA); Bianchini, Gregory M. (Livermore, CA)

    1990-01-01

    A combustion synthesis process for the preparation of .alpha.-silicon nitride and composites thereof is disclosed. Preparation of the .alpha.-silicon nitride comprises the steps of dry mixing silicon powder with an alkali metal azide, such as sodium azide, cold-pressing the mixture into any desired shape, or loading the mixture into a fused, quartz crucible, loading the crucible into a combustion chamber, pressurizing the chamber with nitrogen and igniting the mixture using an igniter pellet. The method for the preparation of the composites comprises dry mixing silicon powder (Si) or SiO.sub.2, with a metal or metal oxide, adding a small amount of an alkali metal azide such as sodium azide, introducing the mixture into a suitable combustion chamber, pressurizing the combustion chamber with nitrogen, igniting the mixture within the combustion chamber, and isolating the .alpha.-silicon nitride formed as a reaction product.

  11. Nitrided iron catalysts for the Fischer-Tropsch synthesis in the eighties

    SciTech Connect (OSTI)

    Anderson, R.B.

    1980-01-01

    A survey covers the preparation and structure of nitrided iron catalysts and their activity, selectivity, and stability for the reaction of synthesis gas in comparison with iron catalysts pretreated by various other methods, as measured in laboratory reactors; a comparison of product distributions obtained in fluidized-bed, slurry, and oil-circulation fixed bed pilot plants with nitrided catalysts and by the Kellogg entrained catalyst process SASOL, which uses a reduced iron catalyst; and possible methods for refining the Fischer-Tropsch products from nitrided iron catalysts for producing gasoline, including bauxite treatment, the Mobil process for converting oxygenates to high-octane gasoline and C/sub 3/-C/sub 4/ olefins, and an alkylation-polymerization process for converting the C/sub 3/-C/sub 4/ fraction to high-octane blending stocks.

  12. The different adsorption mechanism of methane molecule onto a boron nitride and a graphene flakes

    SciTech Connect (OSTI)

    Seyed-Talebi, Seyedeh Mozhgan; Neek-Amal, M.

    2014-10-21

    Graphene and single layer hexagonal boron-nitride are two newly discovered 2D materials with wonderful physical properties. Using density functional theory, we study the adsorption mechanism of a methane molecule over a hexagonal flake of single layer hexagonal boron-nitride (h-BN) and compare the results with those of graphene. We found that independent of the used functional in our ab-initio calculations, the adsorption energy in the h-BN flake is larger than that for graphene. Despite of the adsorption energy profile of methane over a graphene flake, we show that there is a long range behavior beyond minimum energy in the adsorption energy of methane over h-BN flake. This result reveals the higher sensitivity of h-BN sheet to the adsorption of a typical closed shell molecule with respect to graphene. The latter gives insight in the recent experiments of graphene over hexagonal boron nitride.

  13. Gallium and indium imaging agents. 2. Complexes of sulfonated catecholyamide sequestering agents

    SciTech Connect (OSTI)

    Pecoraro, V.L.; Wong, G.B.; Raymond, K.N.

    1982-06-01

    The solution equilibria for the reaction of Ga(III) and In(III) with the hexadentate ligands N, N', N''-tris(2,3-dihydroxy-5-sulfonatobenzoyl)-1,3,5-tris(aminomethyl)benzene (MECAMS) and N, N', N''-tris(2,3-dihydroxy-5-sulfonatobenzoyl)-1,5,10-triazadecane (3,4-LICAMS) and the bidentate catechol N,N-dimethyl-2,3-dihydroxy-5-sulfonatobenzamide (DMBS) have been determined on 0.1 M KNO/sub 3/ at 25/sup 0/C. Both Ga(III) and In(III) are coordinated by three catecholate groups at high pH and have formation constants of the order ..beta../sub 110/ = 10/sup 38/ M/sup -1/. As the acidity of the medium is increased, the metal complexes of the hexadentate sequestering agents undergo protonation reactions. For the determination of the nature of the protonated metal chelates, the stretching frequency of the amide carbonyl has been monitored in D/sub 2/O by Fourier transform infrared spectroscopy (FT IR). These data support a series of two one-proton steps to form a mixed salicylate-catecholate coordination about the metal ion. In the salicylate bonding mode the metal is bound through the ortho phenolic oxygen and the amide cabonyl whereas catecholate coordination is via the adjacent phenols. In contrast, protonation of the M/sup III/(DMBS)/sub 3/ complexes results in dissociation of a catechol moiety to form M/sup III/(DMBS)/sub 2/. The potential use of these compounds as tumor-imaging agents in cancer diagnosis is discussed, with specific attention to the role of the gallium transferrin complex.

  14. Organic hybrid planar-nanocrystalline bulk heterojunctions

    DOE Patents [OSTI]

    Forrest, Stephen R.; Yang, Fan

    2013-04-09

    A photosensitive optoelectronic device having an improved hybrid planar bulk heterojunction includes a plurality of photoconductive materials disposed between the anode and the cathode. The photoconductive materials include a first continuous layer of donor material and a second continuous layer of acceptor material. A first network of donor material or materials extends from the first continuous layer toward the second continuous layer, providing continuous pathways for conduction of holes to the first continuous layer. A second network of acceptor material or materials extends from the second continuous layer toward the first continuous layer, providing continuous pathways for conduction of electrons to the second continuous layer. The first network and the second network are interlaced with each other. At least one other photoconductive material is interspersed between the interlaced networks. This other photoconductive material or materials has an absorption spectra different from the donor and acceptor materials.

  15. Organic hybrid planar-nanocrystalline bulk heterojunctions

    DOE Patents [OSTI]

    Forrest, Stephen R. (Ann Arbor, MI); Yang, Fan (Piscataway, NJ)

    2011-03-01

    A photosensitive optoelectronic device having an improved hybrid planar bulk heterojunction includes a plurality of photoconductive materials disposed between the anode and the cathode. The photoconductive materials include a first continuous layer of donor material and a second continuous layer of acceptor material. A first network of donor material or materials extends from the first continuous layer toward the second continuous layer, providing continuous pathways for conduction of holes to the first continuous layer. A second network of acceptor material or materials extends from the second continuous layer toward the first continuous layer, providing continuous pathways for conduction of electrons to the second continuous layer. The first network and the second network are interlaced with each other. At least one other photoconductive material is interspersed between the interlaced networks. This other photoconductive material or materials has an absorption spectra different from the donor and acceptor materials.

  16. DEVELOPMENT OF THE BULK TRITIUM SHIPPING PACKAGING

    SciTech Connect (OSTI)

    Blanton, P.; Eberl, K.

    2008-09-14

    A new radioactive shipping packaging for transporting bulk quantities of tritium, the Bulk Tritium Shipping Package (BTSP), has been designed for the Department of Energy (DOE) as a replacement for a package designed in the early 1970s. This paper summarizes significant design features and describes how the design satisfies the regulatory safety requirements of the Code of Federal Regulations and the International Atomic Energy Agency. The BTSP design incorporates many improvements over its predecessor by implementing improved testing, handling, and maintenance capabilities, while improving manufacturability and incorporating new engineered materials. This paper also discusses the results from testing of the BTSP to 10 CFR 71 Normal Conditions of Transport and Hypothetical Accident Condition events. The programmatic need of the Department of Energy (DOE) to ship bulk quantities of tritium has been satisfied since the late 1970s by the UC-609 shipping package. The current Certificate of Conformance for the UC-609, USA/9932/B(U) (DOE), will expire in late 2011. Since the UC-609 was not designed to meet current regulatory requirements, it will not be recertified and thereby necessitates a replacement Type B shipping package for continued DOE tritium shipments in the future. A replacement tritium packaging called the Bulk Tritium Shipping Package (BTSP) is currently being designed and tested by Savannah River National Laboratory (SRNL). The BTSP consists of two primary assemblies, an outer Drum Assembly and an inner Containment Vessel Assembly (CV), both designed to mitigate damage and to protect the tritium contents from leaking during the regulatory Hypothetical Accident Condition (HAC) events and during Normal Conditions of Transport (NCT). During transport, the CV rests on a silicone pad within the Drum Liner and is covered with a thermal insulating disk within the insulated Drum Assembly. The BTSP packaging weighs approximately 500 lbs without contents and is 50-1/2 inches high by 24-1/2 inches in outside diameter. With contents the gross weight of the BTSP is 650 lbs. The BTSP is designed for the safe shipment of 150 grams of tritium in a solid or gaseous state. To comply with the federal regulations that govern Type B shipping packages, the BTSP is designed so that it will not lose tritium at a rate greater than the limits stated in 10CFR 71.51 of 10{sup -6} A2 per hour for the 'Normal Conditions of Transport' (NCT) and an A2 in 1 week under 'Hypothetical Accident Conditions' (HAC). Additionally, since the BTSP design incorporates a valve as part of the tritium containment boundary, secondary containment features are incorporated in the CV Lid to protect against gas leakage past the valve as required by 10CFR71.43(e). This secondary containment boundary is designed to provide the same level of containment as the primary containment boundary when subjected to the HAC and NCT criteria.

  17. DEPLOYMENT OF THE BULK TRITIUM SHIPPING PACKAGE

    SciTech Connect (OSTI)

    Blanton, P.

    2013-10-10

    A new Bulk Tritium Shipping Package (BTSP) was designed by the Savannah River National Laboratory to be a replacement for a package that has been used to ship tritium in a variety of content configurations and forms since the early 1970s. The BTSP was certified by the National Nuclear Safety Administration in 2011 for shipments of up to 150 grams of Tritium. Thirty packages were procured and are being delivered to various DOE sites for operational use. This paper summarizes the design features of the BTSP, as well as associated engineered material improvements. Fabrication challenges encountered during production are discussed as well as fielding requirements. Current approved tritium content forms (gas and tritium hydrides), are reviewed, as well as, a new content, tritium contaminated water on molecular sieves. Issues associated with gas generation will also be discussed.

  18. Alternative Liquid Fuel Effects on Cooled Silicon Nitride Marine Gas Turbine Airfoils

    SciTech Connect (OSTI)

    Holowczak, J.

    2002-03-01

    With prior support from the Office of Naval Research, DARPA, and U.S. Department of Energy, United Technologies is developing and engine environment testing what we believe to be the first internally cooled silicon nitride ceramic turbine vane in the United States. The vanes are being developed for the FT8, an aeroderivative stationary/marine gas turbine. The current effort resulted in further manufacturing and development and prototyping by two U.S. based gas turbine grade silicon nitride component manufacturers, preliminary development of both alumina, and YTRIA based environmental barrier coatings (EBC's) and testing or ceramic vanes with an EBC coating.

  19. Cubic boron nitride: a new prospective material for ultracold neutron application

    E-Print Network [OSTI]

    Yu. Sobolev; Th. Lauer; Yu. Borisov; M. Daum; N. du Fresne; L. Goeltl; G. Hampel; W. Heil; A. Knecht; M. Keunecke; J. V. Kratz; T. Lang; M. Meister; Ch. Plonka-Spehr; Yu. Pokotilovski; P. Reichert; U. Schmidt; Th. Krist; N. Wiehl; J. Zenner

    2009-01-11

    For the first time, the neutron optical wall-potential of natural cubic boron nitride (cBN) was measured at the ultracold neutron (UCN) source of the research reactor TRIGA Mainz using the time-of-flight method (TOF). The samples investigated had a wall-potential of (305 +/- 15) neV. This value is in good agreement with the result extracted from neutron reflectometry data and theoretical expectations. Because of its high critical velocity for UCN and its good dielectric characteristics, cubic boron nitride coatings (isotopically enriched) will be useful for a number of applications in UCN experiments.

  20. Efficient boron nitride nanotube formation via combined laser-gas flow levitation

    DOE Patents [OSTI]

    Whitney, R. Roy; Jordan, Kevin; Smith, Michael

    2014-03-18

    A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z.

  1. Improved porous mixture of molybdenum nitride and tantalum oxide as a charge storage material

    SciTech Connect (OSTI)

    Deng, C.Z.; Pynenburg, R.A.J.; Tsai, K.C.

    1998-04-01

    High surface area {gamma}-molybdenum nitride has shown promise as a charge storage material. The addition of amorphous tantalum oxide to the molybdenum nitride system not only improves the film cohesion tremendously, but also widens the voltage stability window from 0.8 to 1.1 V. This occurs without adversely effecting the capacitance. Ultracapacitors, also called supercapacitors or electrochemical capacitors, are high power storage devices which have found application in products as diverse as cardiac pacemakers, cellular phones, electric vehicles, and air bags.

  2. Desorption and sublimation kinetics for fluorinated aluminum nitride surfaces

    SciTech Connect (OSTI)

    King, Sean W., E-mail: sean.king@intel.com; Davis, Robert F. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Nemanich, Robert J. [Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-09-01

    The adsorption and desorption of halogen and other gaseous species from surfaces is a key fundamental process for both wet chemical and dry plasma etch and clean processes utilized in nanoelectronic fabrication processes. Therefore, to increase the fundamental understanding of these processes with regard to aluminum nitride (AlN) surfaces, temperature programmed desorption (TPD) and x-ray photoelectron spectroscopy (XPS) have been utilized to investigate the desorption kinetics of water (H{sub 2}O), fluorine (F{sub 2}), hydrogen (H{sub 2}), hydrogen fluoride (HF), and other related species from aluminum nitride thin film surfaces treated with an aqueous solution of buffered hydrogen fluoride (BHF) diluted in methanol (CH{sub 3}OH). Pre-TPD XPS measurements of the CH{sub 3}OH:BHF treated AlN surfaces showed the presence of a variety of Al-F, N-F, Al-O, Al-OH, C-H, and C-O surfaces species in addition to Al-N bonding from the AlN thin film. The primary species observed desorbing from these same surfaces during TPD measurements included H{sub 2}, H{sub 2}O, HF, F{sub 2}, and CH{sub 3}OH with some evidence for nitrogen (N{sub 2}) and ammonia (NH{sub 3}) desorption as well. For H{sub 2}O, two desorption peaks with second order kinetics were observed at 195 and 460?°C with activation energies (E{sub d}) of 51?±?3 and 87?±?5?kJ/mol, respectively. Desorption of HF similarly exhibited second order kinetics with a peak temperature of 475?°C and E{sub d} of 110?±?5?kJ/mol. The TPD spectra for F{sub 2} exhibited two peaks at 485 and 585?°C with second order kinetics and E{sub d} of 62?±?3 and 270?±?10?kJ/mol, respectively. These values are in excellent agreement with previous E{sub d} measurements for desorption of H{sub 2}O from SiO{sub 2} and AlF{sub x} from AlN surfaces, respectively. The F{sub 2} desorption is therefore attributed to fragmentation of AlF{sub x} species in the mass spectrometer ionizer. H{sub 2} desorption exhibited an additional high temperature peak at 910?°C with E{sub d}?=?370?±?10?kJ/mol that is consistent with both the dehydrogenation of surface AlOH species and H{sub 2} assisted sublimation of AlN. Similarly, N{sub 2} exhibited a similar higher temperature desorption peak with E{sub d}?=?535?±?40?kJ/mol that is consistent with the activation energy for direct sublimation of AlN.

  3. Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications

    SciTech Connect (OSTI)

    Russell Dupuis

    2007-06-30

    We report research activities and technical progress on the development of high-efficiency long wavelength ({lambda} {approx} 540nm) green light emitting diodes which covers whole years of the three-year program 'Novel approaches to high-efficiency III-V nitride heterostructure emitters for next-generation lighting applications'. The research activities were focused on the development of p-type layer that has less/no detrimental thermal annealing effect on as well as excellent structural and electrical properties and the development of green LED active region that has superior luminescence quality for {lambda}{approx}540nm green LEDs. We have also studied (1) the thermal annealing effect on blue and green LED active region during the p-type layer growth; (2) the effect of growth parameters and structural factors for LED active region on electroluminescence properties; (3) the effect of substrates and orientation on electrical and electro-optical properties of green LEDs. As a progress highlight, we obtained green-LED-active-region-friendly In{sub 0.04}Ga{sub 0.96}N:Mg exhibiting low resistivity with higher hole concentration (p=2.0 x 10{sup 18} cm{sup -3} and a low resistivity of 0.5 {omega}-cm) and improved optical quality green LED active region emitting at {approx}540nm by electroluminescence. The LEDs with p-InGaN layer can act as a quantum-confined Stark effect mitigation layer by reducing strain in the QW. We also have achieved (projected) peak IQE of {approx}25% at {lambda}{approx}530 nm and of {approx}13% at {lambda}{approx}545 nm. Visible LEDs on a non-polar substrate using (11-20) {alpha}-plane bulk substrates. The absence of quantum-confined Stark effect was confirmed but further improvement in electrical and optical properties is required.

  4. Macroscopic and direct light propulsion of bulk graphene material

    E-Print Network [OSTI]

    Zhang, Tengfei; Wu, Yingpeng; Xiao, Peishuang; Yi, Ningbo; Lu, Yanhong; Ma, Yanfeng; Huang, Yi; Zhao, Kai; Yan, Xiao-Qing; Liu, Zhi-Bo; Tian, Jian-Guo; Chen, Yongsheng

    2015-01-01

    It has been a great challenge to achieve the direct light manipulation of matter on a bulk scale. In this work, the direct light propulsion of matter was observed on a macroscopic scale for the first time using a bulk graphene based material. The unique structure and properties of graphene and the morphology of the bulk graphene material make it capable of not only absorbing light at various wavelengths but also emitting energetic electrons efficiently enough to drive the bulk material following Newtonian mechanics. Thus, the unique photonic and electronic properties of individual graphene sheets are manifested in the response of the bulk state. These results offer an exciting opportunity to bring about bulk scale light manipulation with the potential to realize long-sought proposals in areas such as the solar sail and space transportation driven directly by sunlight.

  5. Hyperon bulk viscosity in the presence of antikaon condensate

    E-Print Network [OSTI]

    Debarati Chatterjee; Debades Bandyopadhyay

    2009-10-31

    We investigate the hyperon bulk viscosity due to the non-leptonic process $n + p \\rightleftharpoons p + \\Lambda $ in $K^-$ condensed matter and its effect on the r-mode instability in neutron stars. We find that the hyperon bulk viscosity coefficient in the presence of antikaon condensate is suppressed compared with the case without the condensate. The suppressed hyperon bulk viscosity in the superconducting phase is still an efficient mechanism to damp the r-mode instability in neutron stars.

  6. RAPID/BulkTransmission/General Construction | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsourceBulkTransmission/Environment/Nevada < RAPID‎ | BulkTransmission‎ |RAPID/BulkTransmission/General

  7. RAPID/BulkTransmission/Idaho | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsourceBulkTransmission/Environment/Nevada < RAPID‎ | BulkTransmission‎RAPID/BulkTransmission/Idaho <

  8. RAPID/BulkTransmission/Land Access | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsourceBulkTransmission/Environment/Nevada < RAPID‎ | BulkTransmission‎RAPID/BulkTransmission/Idaho

  9. Real-time synchrotron x-ray studies of low- and high-temperature nitridation of c-plane sapphire

    SciTech Connect (OSTI)

    Wang Yiyi; Oezcan, Ahmet S.; Ludwig, Karl F. Jr. [Physics Department, Boston University, Boston, Massachusetts 02215 (United States); Oezaydin, Goezde [Department of Aerospace and Mechanical Engineering, Boston University, Boston, Massachusetts 02215 (United States); Bhattacharyya, Anirban; Moustakas, Theodore D. [Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215 (United States); Zhou, Hua; Headrick, Randall L. [Department of Physics, University of Vermont, Burlington, Vermont 05405 (United States); Siddons, D. Peter [National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973 (United States)

    2006-12-15

    The plasma nitridation kinetics of c-plane sapphire at both low (200-300 deg. C) and high (750 deg. C) substrate temperatures was examined using grazing-incidence real-time x-ray diffraction, in situ x-ray reflection and in situ reflection high-energy electron diffraction (RHEED). These monitored the evolution of the nitride thickness, strain, and surface structure during nitridation. The evolution of the AlN(1010) peak showed that the heteroepitaxial strain in the first layer of nitride is already significantly relaxed relative to the substrate. Subsequent layers grow with increasing relaxation. In both the high- and low-temperature nitridation cases, the results suggest that the early stage nitridation is governed by a complex nucleation and growth process. Nitridation at both temperatures apparently proceeds in a two-dimensional growth mode with the initial nucleating islands consisting of several monolayers which grow laterally. At low temperature the growth slows or even stops after impingement of the nucleating islands covering the surface, possibly due to low diffusivities through the existing layer. Initial formation and growth rates of nucleating islands at high temperatures are comparable to those at low temperatures, but subsequent growth into the substrate is significantly enhanced over the low temperature case, consistent with activation energies of 0.1-0.25 eV.

  10. New nano structure approaches for bulk thermoelectric materials

    E-Print Network [OSTI]

    Kim, Jeonghoon

    2010-01-01

    in bulk thermoelectric materials", M. Mater. Res. Soc.Thermoelectricity", Materials Reserach Society Symposium,Johnson, D. C. , Eds. Materials Research Society: Boston,

  11. Synovial fluid homeostasis : bulk flow, lubricant transport, and biophysical restoration

    E-Print Network [OSTI]

    McCarty, William Joseph

    2012-01-01

    of synovial fluid lubricants hyaluronan and proteoglycan 4HOMEOSTASIS: BULK FLOW, LUBRICANT TRANSPORT, AND BIOPHYSICALmodel of synovial fluid lubricant composition in normal and

  12. Optimizing Morphology of Bulk Heterojunction Polymer Solar Cells

    E-Print Network [OSTI]

    Gao, Jing

    2014-01-01

    Heterojunction Polymer Solar Cells A dissertation submittedBulk Heterojunction Polymer Solar Cells by Jing Gao Doctorheterojunction polymer solar cells is profoundly influenced

  13. Discovery of New Alloys by Bulk Combinatorial Synthesis | The...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Discovery of New Alloys by Bulk Combinatorial Synthesis The Critical Materials Institute (CMI) is developing new capabilities in the search for new materials or substitutions in...

  14. Regulatory Roadmap Workshop for Federal Bulk Transmission Regulations...

    Open Energy Info (EERE)

    Regulatory Roadmapping Pgower's picture Submitted by Pgower(50) Contributor 7 August, 2014 - 14:19 One-day workshop to review regulatory roadmaps for bulk transmission. Date:...

  15. Factors influencing photocurrent generation in organic bulk heterojunc...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Factors influencing photocurrent generation in organic bulk heterojunction solar cells: interfacial energetics and blend microstructure April 29, 2009 at 3pm36-428 Jenny Nelson...

  16. Economic manufacturing of bulk metallic glass compositions by microalloying

    DOE Patents [OSTI]

    Liu, Chain T.

    2003-05-13

    A method of making a bulk metallic glass composition includes the steps of:a. providing a starting material suitable for making a bulk metallic glass composition, for example, BAM-11; b. adding at least one impurity-mitigating dopant, for example, Pb, Si, B, Sn, P, to the starting material to form a doped starting material; and c. converting the doped starting material to a bulk metallic glass composition so that the impurity-mitigating dopant reacts with impurities in the starting material to neutralize deleterious effects of the impurities on the formation of the bulk metallic glass composition.

  17. Lithium Ion Solvation and Diffusion in Bulk Organic Electrolytes...

    Office of Scientific and Technical Information (OSTI)

    Lithium Ion Solvation and Diffusion in Bulk Organic Electrolytes from First Principles and Classical Reactive Molecular Dynamics Citation Details In-Document Search Title: Lithium...

  18. Bulk viscosity of QCD matter near the critical temperature

    E-Print Network [OSTI]

    D. Kharzeev; K. Tuchin

    2007-05-29

    Kubo's formula relates bulk viscosity to the retarded Green's function of the trace of the energy-momentum tensor. Using low energy theorems of QCD for the latter we derive the formula which relates the bulk viscosity to the energy density and pressure of hot matter. We then employ the available lattice QCD data to extract the bulk viscosity as a function of temperature. We find that close to the deconfinement temperature bulk viscosity becomes large, with viscosity-to-entropy ratio zeta/s about 1.

  19. Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

    DOE Patents [OSTI]

    Curtis, Calvin J. (Lakewood, CO); Miedaner, Alexander (Boulder, CO); Van Hest, Maikel (Lakewood, CO); Ginley, David S. (Evergreen, CO); Nekuda, Jennifer A. (Lakewood, CO)

    2011-11-15

    Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

  20. X-ray study of the oxidation of liquid-gallium surfaces M. J. Regan,* H. Tostmann, and P. S. Pershan

    E-Print Network [OSTI]

    Pershan, Peter S.

    waves with temperatures up to only 443 K. This is a good indication that the oxide layer provides for the atomic arrangements in the gallium oxide layer and its interface with the underlying liquid. S0163 resistance arises from the natural formation of an inert oxide layer on its free surface.2 The study

  1. Thermodynamic properties of bulk and confined water

    SciTech Connect (OSTI)

    Mallamace, Francesco; Corsaro, Carmelo; Mallamace, Domenico; Vasi, Sebastiano; Vasi, Cirino; Stanley, H. Eugene

    2014-11-14

    The thermodynamic response functions of water display anomalous behaviors. We study these anomalous behaviors in bulk and confined water. We use nuclear magnetic resonance (NMR) to examine the configurational specific heat and the transport parameters in both the thermal stable and the metastable supercooled phases. The data we obtain suggest that there is a behavior common to both phases: that the dynamics of water exhibit two singular temperatures belonging to the supercooled and the stable phase, respectively. One is the dynamic fragile-to-strong crossover temperature (T{sub L} ? 225 K). The second, T{sup *} ? 315 ± 5 K, is a special locus of the isothermal compressibility K{sub T}(T, P) and the thermal expansion coefficient ?{sub P}(T, P) in the P–T plane. In the case of water confined inside a protein, we observe that these two temperatures mark, respectively, the onset of protein flexibility from its low temperature glass state (T{sub L}) and the onset of the unfolding process (T{sup *})

  2. Excitonic exchange splitting in bulk semiconductors

    SciTech Connect (OSTI)

    Fu, H.; Wang, L.; Zunger, A.

    1999-02-01

    We present an approach to calculate the excitonic fine-structure splittings due to electron-hole short-range exchange interactions using the local-density approximation pseudopotential method, and apply it to bulk semiconductors CdSe, InP, GaAs, and InAs. Comparing with previous theoretical results, the current calculated splittings agree well with experiments. Furthermore, we provide an approximate relationship between the short-range exchange splitting and the exciton Bohr radius, which can be used to estimate the exchange splitting for other materials. The current calculation indicates that a commonly used formula for exchange splitting in quantum dot is not valid. Finally, we find a very large pressure dependence of the exchange splitting: a factor of 4.5 increase as the lattice constant changes by 3.5{percent}. This increase is mainly due to the decrease of the Bohr radius via the change of electron effective mass. {copyright} {ital 1999} {ital The American Physical Society}

  3. Determination of Bulk Dimensional Variation in Castings

    SciTech Connect (OSTI)

    Dr. James F. Cuttino Dr. Edward P. Morse

    2005-04-14

    The purpose of this work is to improve the efficiency of green sand foundries so that they may continue to compete as the most cost-effective method of fabrication while meeting tightening constraints on near-net shape manufacturing. In order to achieve this objective, the study is divided into two major components. The first component concentrated on identifying which processes control surface finish on the castings and which provide potential reductions in variations. The second component identified metrological methods that effectively discern between the geometry of bulk material versus surface finish in order to more accurately determine the quality of a part. The research resulted in the determination of an empirical relationship relating pouring parameters to dimensional variation, with an R2 value of greater than 0.79. A significant difference in variations obtained from vertical vs. horizontal molding machines was also noticed. When analyzed separately, however, the resulting empirical relationships for horizontal and vertical machines had reduced R2 values, probably due to the reduced data sets. Significant parameters when considering vertical and horizontal molding machines together included surface roughness, pattern type, iron type, pouring rate, copper content, amount of Western Bentonite, and permeability.

  4. Monolayer Passivation of Ge(100) Surface via Nitridation and Oxidation Joon Sung Leea,b

    E-Print Network [OSTI]

    Kummel, Andrew C.

    Monolayer Passivation of Ge(100) Surface via Nitridation and Oxidation Joon Sung Leea,b , Sarah R passivation of Ge(100) surface via formation of Ge-N and Ge-O surface species was studied using scanning cyclotron resonance (ECR) plasma source formed an ordered Ge-N structure on a Ge(100) surface at 500o C. DFT

  5. Epitaxial ternary nitride thin films prepared by a chemical solution method

    SciTech Connect (OSTI)

    Luo, Hongmei [Los Alamos National Laboratory; Feldmann, David M [Los Alamos National Laboratory; Wang, Haiyan [TEXAS A& M; Bi, Zhenxing [TEXAS A& M

    2008-01-01

    It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

  6. Plasma nitridation of thin Si layers for GaAs dielectrics D. M. Diatezua,b)

    E-Print Network [OSTI]

    Rockett, Angus

    logarithmically with time. A model based on electron tunneling is proposed to explain the results. Capacitance suc- cessful FETs without electron confinement in the ICL and with low midgap trap densities at the Ga to an electron cyclotron resonance nitrogen plasma for varying times. The nitride thickness is shown to increase

  7. Light emission from silicon-rich nitride nanostructures L. Dal Negro,a

    E-Print Network [OSTI]

    Light emission from silicon-rich nitride nanostructures L. Dal Negro,a J. H. Yi, and L. C-infrared emission, large absorption/ emission Stokes shift, and nanosecond recombination. Our results are supported a crucial role in the emission mechanism of SRN films. Light emission from SRN systems can provide

  8. Theory of nitride oxide adsorption on transition metal (111) surfaces: a first-principles investigation

    E-Print Network [OSTI]

    Li, Weixue

    In this work, we report a density functional theory study of nitric oxide (NO) adsorption on close of NO adsorption on TM(111) surfaces in the submonolayer regime. 1. Introduction The catalytic reduction of NOxTheory of nitride oxide adsorption on transition metal (111) surfaces: a first

  9. Supplemental Materials: Effective Cleaning of Hexagonal Boron Nitride for Graphene Devices

    E-Print Network [OSTI]

    Goldhaber-Gordon, David

    Supplemental Materials: Effective Cleaning of Hexagonal Boron Nitride for Graphene Devices Andrei G-mail: ag254@stanford.edu; goldhaber-gordon@stanford.edu We discuss in greater detail the sample preparation procedure and transport measure- ments of our graphene/h-BN devices. Flakes of h-BN were produced

  10. Investigation of mode coupling in normal-dispersion silicon nitride microresonators

    E-Print Network [OSTI]

    Purdue University

    -dispersion devices highlight mode interactions as a beneficial tool for comb initiation and pulse formation. © 2014Investigation of mode coupling in normal- dispersion silicon nitride microresonators for Kerr microresonators are the subject of intense study for potential applications ranging from short pulse generation

  11. Transport of multiply and highly charged ions through nanoscale apertures in silicon nitride membranes

    E-Print Network [OSTI]

    . PACS: 34.50.Dy Keywords: Slow highly charged ions; Capillary transmission; Charge exchange 1-the-barrier model (COB) [4­7]. The model can be used to estimate the critical distance for charge transfer dc exchange of multiply and highly charged ions for transmission of aper- tures in silicon nitride targets

  12. EVALUATION OF MECHANICAL RELIABILITY OF SILICON NITRIDE VANES AFTER FIELD TESTS IN AN INDUSTRIAL GAS TURBINE

    E-Print Network [OSTI]

    Pennycook, Steve

    GAS TURBINE H.-T. Lin and M. K. Ferber Metals and Ceramics Division Oak Ridge National Laboratory Oak field tests in an industrial gas turbine. Two commercially available silicon nitride vanes (i.e., AS800- temperature structural components in advanced gas turbines [1-5]. These materials offer the advantages of (1

  13. Evaluation of Mechanical Reliability of Silicon Nitride Vanes After Field Tests in an Industrial Gas Turbine

    E-Print Network [OSTI]

    Pennycook, Steve

    Vanes Was Successfully Completed by Rolls-Royce Allison in 1999 Model 501K Turbine Exxon - Mobile, AL Dovetail Region Production Billets #12;200 hr Interval - Exxon - 6/29/99 Phase I Testing of Silicon Nitride-sprayed Oxide-based EBC (~ 150-200 µm) 4 µm8 µm #12;Ceramic Vane Turbine Demonstration Details · Exxon turbine

  14. Electron cyclotron wave resonance plasma assisted deposition of cubic boron nitride thin films

    E-Print Network [OSTI]

    Zexian, Cao

    Electron cyclotron wave resonance plasma assisted deposition of cubic boron nitride thin films Z. X-pressure plasma source. The electron-cyclotron-wave resonance ECWR plasma served both to sputter the hBN target the high-resolution TEM image and the arc pattern of the 111 reflection from selected-area electron

  15. Materials Science and Engineering A259 (1999) 6572 Mechanical properties of oxidized silicon nitride ceramics

    E-Print Network [OSTI]

    Gubicza, Jenő

    1999-01-01

    .g. hardness, elastic modulus) has not been studied. In the present paper the oxidation-induced changes of silicon nitride ceramics with four different compositions is studied. Room temperature values of bending strength and elastic modulus of the whole oxidized material and of hardness, the fracture toughness

  16. Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1

    E-Print Network [OSTI]

    Shepard, Kenneth

    Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1 , Cory Dean1, 10027 Tel: (212) 854-2529, Fax: (212) 932-9421, Email: shepard@ee.columbia.edu Abstract Graphene field of graphene, as the gate dielectric. The devices ex- hibit mobility values exceeding 10,000 cm2 /V

  17. Method of chemical vapor deposition of boron nitride using polymeric cyanoborane

    DOE Patents [OSTI]

    Maya, L.

    1994-06-14

    Polymeric cyanoborane is volatilized, decomposed by thermal or microwave plasma energy, and deposited on a substrate as an amorphous film containing boron, nitrogen and carbon. Residual carbon present in the film is removed by ammonia treatment at an increased temperature, producing an adherent, essentially stoichiometric boron nitride film. 11 figs.

  18. Multi-scale modelling of III-nitrides: from dislocations to the electronic structure

    E-Print Network [OSTI]

    Holec, David

    level modelling for the case of the critical thickness of thin epitaxial layers, and covers some issues of simulating the electronic structure of III-nitride alloys by means of the first principle methods. The first part of this work discusses several...

  19. Evaluation and silicon nitride internal combustion engine components. Final report, Phase I

    SciTech Connect (OSTI)

    Voldrich, W. [Allied-Signal Aerospace Co., Torrance, CA (United States). Garrett Ceramic Components Div.

    1992-04-01

    The feasibility of silicon nitride (Si{sub 3}N{sub 4}) use in internal combustion engines was studied by testing three different components for wear resistance and lower reciprocating mass. The information obtained from these preliminary spin rig and engine tests indicates several design changes are necessary to survive high-stress engine applications. The three silicon nitride components tested were valve spring retainers, tappet rollers, and fuel pump push rod ends. Garrett Ceramic Components` gas-pressure sinterable Si{sub 3}N{sub 4} (GS-44) was used to fabricate the above components. Components were final machined from densified blanks that had been green formed by isostatic pressing of GS-44 granules. Spin rig testing of the valve spring retainers indicated that these Si{sub 3}N{sub 4} components could survive at high RPM levels (9,500) when teamed with silicon nitride valves and lower spring tension than standard titanium components. Silicon nitride tappet rollers showed no wear on roller O.D. or I.D. surfaces, steel axles and lifters; however, due to the uncrowned design of these particular rollers the cam lobes indicated wear after spin rig testing. Fuel pump push rod ends were successful at reducing wear on the cam lobe and rod end when tested on spin rigs and in real-world race applications.

  20. Characterization of multilayer nitride coatings by electron microscopy and modulus mapping

    SciTech Connect (OSTI)

    Pemmasani, Sai Pramod [International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Balapur P.O., Hyderabad — 500005 India (India); School of Engineering Sciences and Technology, University of Hyderabad, Gachibowli, Hyderabad — 500046 India (India); Rajulapati, Koteswararao V. [School of Engineering Sciences and Technology, University of Hyderabad, Gachibowli, Hyderabad — 500046 India (India); Ramakrishna, M.; Valleti, Krishna [International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Balapur P.O., Hyderabad — 500005 India (India); Gundakaram, Ravi C., E-mail: ravi.gundakaram@arci.res.in [International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Balapur P.O., Hyderabad — 500005 India (India); Joshi, Shrikant V. [International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Balapur P.O., Hyderabad — 500005 India (India)

    2013-07-15

    This paper discusses multi-scale characterization of physical vapour deposited multilayer nitride coatings using a combination of electron microscopy and modulus mapping. Multilayer coatings with a triple layer structure based on TiAlN and nanocomposite nitrides with a nano-multilayered architecture were deposited by Cathodic arc deposition and detailed microstructural studies were carried out employing Energy Dispersive Spectroscopy, Electron Backscattered Diffraction, Focused Ion Beam and Cross sectional Transmission Electron Microscopy in order to identify the different phases and to study microstructural features of the various layers formed as a result of the deposition process. Modulus mapping was also performed to study the effect of varying composition on the moduli of the nano-multilayers within the triple layer coating by using a Scanning Probe Microscopy based technique. To the best of our knowledge, this is the first attempt on modulus mapping of cathodic arc deposited nitride multilayer coatings. This work demonstrates the application of Scanning Probe Microscopy based modulus mapping and electron microscopy for the study of coating properties and their relation to composition and microstructure. - Highlights: • Microstructure of a triple layer nitride coating studied at multiple length scales. • Phases identified by EDS, EBSD and SAED (TEM). • Nanolayered, nanocomposite structure of the coating studied using FIB and TEM. • Modulus mapping identified moduli variation even in a nani-multilayer architecture.

  1. Carbon-Doped Boron Nitride Nanomesh: Stability and Electronic Properties of Adsorbed Hydrogen and Oxygen

    E-Print Network [OSTI]

    Pandey, Ravi

    solutions for hydrogen storage. On the other hand, oxygen storage is also important in the energy industryCarbon-Doped Boron Nitride Nanomesh: Stability and Electronic Properties of Adsorbed Hydrogen, and at an intermediate siteis investigated with density functional theory. The calculated results find that atomic

  2. Measurements of thermal transport in low stress silicon nitride films W. Holmes,a)

    E-Print Network [OSTI]

    Richards, Paul L.

    Measurements of thermal transport in low stress silicon nitride films W. Holmes,a) J. M. Gildemeister, and P. L. Richardsb) Physics Department, University of California, Berkeley, California 94720 and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 V. Kotsuboc

  3. Alternated high-and low-pressure nitriding of austenitic stainless steel: Mechanisms and results

    E-Print Network [OSTI]

    Alternated high- and low-pressure nitriding of austenitic stainless steel: Mechanisms and results G a gas mixture of (N2 /H2):(50/50) in pressure, was applied to stainless-steel AISI 304. In the first penetrate far beyond the compound layer. These nitrogen atoms, uptaken into the austenitic stainless-steel

  4. Improving Bulk Microphysics Parameterizations in Simulations of Aerosol Effects

    SciTech Connect (OSTI)

    Wang, Yuan; Fan, Jiwen; Zhang, Renyi; Leung, Lai-Yung R.; Franklin, Charmaine N.

    2013-06-05

    To improve the microphysical parameterizations for simulations of the aerosol indirect effect (AIE) in regional and global climate models, a double-moment bulk microphysical scheme presently implemented in the Weather Research and Forecasting (WRF) model is modified and the results are compared against atmospheric observations and simulations produced by a spectral bin microphysical scheme (SBM). Rather than using prescribed aerosols as in the original bulk scheme (Bulk-OR), a prognostic doublemoment aerosol representation is introduced to predict both the aerosol number concentration and mass mixing ratio (Bulk-2M). The impacts of the parameterizations of diffusional growth and autoconversion and the selection of the embryonic raindrop radius on the performance of the bulk microphysical scheme are also evaluated. Sensitivity modeling experiments are performed for two distinct cloud regimes, maritime warm stratocumulus clouds (SC) over southeast Pacific Ocean from the VOCALS project and continental deep convective clouds (DCC) in the southeast of China from the Department of Energy/ARM Mobile Facility (DOE/AMF) - China field campaign. The results from Bulk-2M exhibit a much better agreement in the cloud number concentration and effective droplet radius in both the SC and DCC cases with those from SBM and field measurements than those from Bulk-OR. In the SC case particularly, Bulk-2M reproduces the observed drizzle precipitation, which is largely inhibited in Bulk-OR. Bulk-2M predicts enhanced precipitation and invigorated convection with increased aerosol loading in the DCC case, consistent with the SBM simulation, while Bulk-OR predicts the opposite behaviors. Sensitivity experiments using four different types of autoconversion schemes reveal that the autoconversion parameterization is crucial in determining the raindrop number, mass concentration, and drizzle formation for warm 2 stratocumulus clouds. An embryonic raindrop size of 40 ?m is determined as a more realistic setting in the autoconversion parameterization. The saturation adjustment employed in calculating condensation/evaporation in the bulk scheme is identified as the main factor responsible for the large discrepancies in predicting cloud water in the SC case, suggesting that an explicit calculation of diffusion growth with predicted supersaturation is necessary for further improvements of the bulk microphysics scheme. Lastly, a larger rain evaporation rate below cloud is found in the bulk scheme in comparison to the SBM simulation, which could contribute to a lower surface precipitation in the bulk scheme.

  5. T-duality trivializes bulk-boundary correspondence

    E-Print Network [OSTI]

    Varghese Mathai; Guo Chuan Thiang

    2015-07-26

    Recently we introduced T-duality in the study of topological insulators. In this paper, we study the bulk-boundary correspondence for three phenomena in condensed matter physics, namely, the quantum Hall effect, the Chern insulator, and time reversal invariant topological insulators. In all of these cases, we show that T-duality trivializes the bulk-boundary correspondence.

  6. Bulk Acoustic Resonator Based on Piezoelectric ZnO Belts

    E-Print Network [OSTI]

    Wang, Zhong L.

    Bulk Acoustic Resonator Based on Piezoelectric ZnO Belts Brent A. Buchine, William L. Hughes, F, a bulk acoustic resonator based on ZnO belts is demonstrated. This device shows a great deal of promise-like geometry, making them ideal candidates as SMR, FBAR, and beam resonators.13 However, handling belts can

  7. MORPHOLOGY DEPENDENT SHORT CIRCUIT CURRENT IN BULK HETEROJUNCTION SOLAR CELL

    E-Print Network [OSTI]

    Alam, Muhammad A.

    MORPHOLOGY DEPENDENT SHORT CIRCUIT CURRENT IN BULK HETEROJUNCTION SOLAR CELL Biswajit Ray, Pradeep, West Lafayette, Indiana, USA ABSTRACT Polymer based bulk heterostructure (BH) solar cell offers a relatively inexpensive option for the future solar cell technology, provided its efficiency increases beyond

  8. New results on water in bulk, nanoconfined, and biological environments

    E-Print Network [OSTI]

    Stanley, H. Eugene

    contract as temperature decreases, liquid bulk water begins to expand when its temperature drops below 4°C remains at 4°C while colder layers of 0°C water "float" on top (cf.. Fig. 1 of Ref. [2]). The mysterious properties of liquid bulk water become more pronounced in the supercooled region below 0°C [3-5]. For example

  9. The Economic Case for Bulk Energy Storage in Transmission Systems

    E-Print Network [OSTI]

    of using energy storage, optimized for multiple objectives, including cost, congestion, and emissions: Optimal Generation Expansion Planning with Integration of Variable Re- newables and Bulk Energy Storage Systems Pumped-hydroelectric energy storage has proven to be valuable as bulk energy storage for energy

  10. Inductively Coupled Plasma Etching of Bulk Titanium for MEMS Applications

    E-Print Network [OSTI]

    MacDonald, Noel C.

    Inductively Coupled Plasma Etching of Bulk Titanium for MEMS Applications E. R. Parker,a, * B. J for the bulk micromachining of microelectromechanical MEMS devices. Titanium- based MEMS have the potential for the microfabrication of titanium-based MEMS devices. © 2005 The Electrochemical Society. DOI: 10.1149/1.2006647 All

  11. Short communication Fractal in fracture of bulk metallic glass

    E-Print Network [OSTI]

    Gao, Jianbo

    Short communication Fractal in fracture of bulk metallic glass M.Q. Jiang a,b , J.X. Meng a , J. Bulk metallic glass B. Dynamic fracture C. Nanoscale periodic corrugation C. Fractal a b s t r a c t We investigate the nanoscale periodic corrugation (NPC) structures on the dynamic fracture surface of a typical

  12. Bulk Vitrification Castable Refractory Block Protection Study

    SciTech Connect (OSTI)

    Hrma, Pavel R.; Bagaasen, Larry M.; Beck, Andrew E.; Brouns, Thomas M.; Caldwell, Dustin D.; Elliott, Michael L.; Matyas, Josef; Minister, Kevin BC; Schweiger, Michael J.; Strachan, Denis M.; Tinsley, Bronnie P.; Hollenberg, Glenn W.

    2005-05-01

    Bulk vitrification (BV) was selected for a pilot-scale test and demonstration facility for supplemental treatment to accelerate the cleanup of low-activity waste (LAW) at the Hanford U.S. DOE Site. During engineering-scale (ES) tests, a small fraction of radioactive Tc (and Re, its nonradioactive surrogate) were transferred out of the LAW glass feed and molten LAW glass, and deposited on the surface and within the pores of the castable refractory block (CRB). Laboratory experiments were undertaken to understand the mechanisms of the transport Tc/Re into the CRB during vitrification and to evaluate various means of CRB protection against the deposition of leachable Tc/Re. The tests used Re as a chemical surrogate for Tc. The tests with the baseline CRB showed that the molten LAW penetrates into CRB pores before it converts to glass, leaving deposits of sulfates and chlorides when the nitrate components decompose. Na2O from the LAW reacts with the CRB to create a durable glass phase that may contain Tc/Re. Limited data from a single CRB sample taken from an ES experiment indicate that, while a fraction of Tc/Re is present in the CRB in a readily leachable form, most of the Tc/Re deposited in the refractory is retained in the form of a durable glass phase. In addition, the molten salts from the LAW, mainly sulfates, chlorides, and nitrates, begin to evaporate from BV feeds at temperatures below 800 C and condense on solid surfaces at temperatures below 530 C. Three approaches aimed at reducing or preventing the deposition of soluble Tc/Re within the CRB were proposed: metal lining, sealing the CRB surface with a glaze, and lining the CRB with ceramic tiles. Metal liners were deemed unsuitable because evaluations showed that they can cause unacceptable distortions of the electric field in the BV system. Sodium silicate and a low-alkali borosilicate glaze were selected for testing. The glazes slowed down molten salt condensate penetration, but did little to reduce the penetration of molten salt. Out of several refractory tile candidates, only greystone and fused-cast alumina-zirconia-silica (AZS) refractory remained intact and well bonded to the CRB after firing to 1000 C. The deformation of the refractory-tile composite was avoided by prefiring the greystone tile to 800 C. Condensed vapors did not penetrate the tiles, but Re salts condensed on their surface. Refractory corrosion tests indicated that a 0.25-inch-thick greystone tile would not corrode during a BV melt. Tiles can reduce both vapor penetration and molten salt penetration, but vapor deposition above the melt line will occur even on tiles. The Tc/Re transport scenario was outlined as follows. At temperatures below 700 C, molten ionic salt (MIS) that includes all the Tc/Re penetrates, by capillarity, from the feed into the CRB open porosity. At approximately 750 C, the MIS decomposes through the loss of NOx, leaving mainly sulfate and chloride salts. The Na2O formed in the decomposition of the nitrates reacts with insoluble grains in the feed and with the aluminosilicates in the CRB to form more viscous liquids that reduce further liquid penetration into the CRB. At 800 to 1000 C, a continuous glass phase traps the remains of the MIS in the form of inclusions in the bulk glass melt. At 1000 to 1200 C, the salt inclusions in the glass slowly dissolve but also rise to the surface. The Tc/Re salts also evaporate from the free surface of the glass melt that is rapidly renewed by convective currents. The vapors condense on cooler surfaces in the upper portion of the CRB, the box lid, and the off-gas system.

  13. Silicon bulk micromachined hybrid dimensional artifact.

    SciTech Connect (OSTI)

    Claudet, Andre A.; Tran, Hy D.; Bauer, Todd Marks; Shilling, Katherine Meghan; Oliver, Andrew David

    2010-03-01

    A mesoscale dimensional artifact based on silicon bulk micromachining fabrication has been developed and manufactured with the intention of evaluating the artifact both on a high precision coordinate measuring machine (CMM) and video-probe based measuring systems. This hybrid artifact has features that can be located by both a touch probe and a video probe system with a k=2 uncertainty of 0.4 {micro}m, more than twice as good as a glass reference artifact. We also present evidence that this uncertainty could be lowered to as little as 50 nm (k=2). While video-probe based systems are commonly used to inspect mesoscale mechanical components, a video-probe system's certified accuracy is generally much worse than its repeatability. To solve this problem, an artifact has been developed which can be calibrated using a commercially available high-accuracy tactile system and then be used to calibrate typical production vision-based measurement systems. This allows for error mapping to a higher degree of accuracy than is possible with a glass reference artifact. Details of the designed features and manufacturing process of the hybrid dimensional artifact are given and a comparison of the designed features to the measured features of the manufactured artifact is presented and discussed. Measurement results from vision and touch probe systems are compared and evaluated to determine the capability of the manufactured artifact to serve as a calibration tool for video-probe systems. An uncertainty analysis for calibration of the artifact using a CMM is presented.

  14. Temperature dependence of bulk viscosity in water using acoustic spectroscopy

    E-Print Network [OSTI]

    M. J. Holmes; N. G. Parker; M. J. W. Povey

    2010-02-16

    Despite its fundamental role in the dynamics of compressible fluids, bulk viscosity has received little experimental attention and there remains a paucity of measured data. Acoustic spectroscopy provides a robust and accurate approach to measuring this parameter. Working from the Navier-Stokes model of a compressible fluid one can show that the bulk viscosity makes a significant and measurable contribution to the frequency-squared acoustic attenuation. Here we employ this methodology to determine the bulk viscosity of Millipore water over a temperature range of 7 to 50 degrees Celsius. The measured attenuation spectra are consistent with the theoretical predictions, while the bulk viscosity of water is found to be approximately three times larger than its shear counterpart, reinforcing its significance in acoustic propagation. Moreover, our results demonstrate that this technique can be readily and generally applied to fluids to accurately determine their temperature dependent bulk viscosities.

  15. Carbon nanotubes grown on bulk materials and methods for fabrication

    SciTech Connect (OSTI)

    Menchhofer, Paul A.; Montgomery, Frederick C.; Baker, Frederick S.

    2011-11-08

    Disclosed are structures formed as bulk support media having carbon nanotubes formed therewith. The bulk support media may comprise fibers or particles and the fibers or particles may be formed from such materials as quartz, carbon, or activated carbon. Metal catalyst species are formed adjacent the surfaces of the bulk support material, and carbon nanotubes are grown adjacent the surfaces of the metal catalyst species. Methods employ metal salt solutions that may comprise iron salts such as iron chloride, aluminum salts such as aluminum chloride, or nickel salts such as nickel chloride. Carbon nanotubes may be separated from the carbon-based bulk support media and the metal catalyst species by using concentrated acids to oxidize the carbon-based bulk support media and the metal catalyst species.

  16. Z .Surface and Coatings Technology 127 2000 260 265 Characterization of carbon nitride thin films deposited by

    E-Print Network [OSTI]

    Gao, Hongjun

    in the fields of condensed matter physics, material science, and chemistry. A vari- w xety of techniques 4 10 2. Experimental The carbon nitride thin films were deposited on Z .polished Si 100 in the microwave

  17. Materials Science and Engineering B78 (2000) 1115 On the structure and composition of crystalline carbon nitride

    E-Print Network [OSTI]

    Gao, Hongjun

    2000-01-01

    and properties of such a hypothetical material is also significant to research in the fields of condensed matter-ray diffraction (XRD) technique. 2. Experimental The carbon nitride thin films were deposited on polished Si(100

  18. Theoretical study of physisorption of nucleobases on boron nitride nanotubes: a new class of hybrid nano-biomaterials

    E-Print Network [OSTI]

    Pandey, Ravi

    nano-biomaterials This article has been downloaded from IOPscience. Please scroll down to see the full on boron nitride nanotubes: a new class of hybrid nano-biomaterials Saikat Mukhopadhyay1 , S Gowtham1

  19. Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

    SciTech Connect (OSTI)

    Verma, Jai Islam, S. M.; Protasenko, Vladimir; Kumar Kandaswamy, Prem; Xing, Huili; Jena, Debdeep

    2014-01-13

    Efficient semiconductor optical emitters in the deep-ultraviolet spectral window are encountering some of the most deep rooted problems of semiconductor physics. In III-Nitride heterostructures, obtaining short-wavelength photon emission requires the use of wide bandgap high Al composition AlGaN active regions. High conductivity electron (n-) and hole (p-) injection layers of even higher bandgaps are necessary for electrical carrier injection. This approach requires the activation of very deep dopants in very wide bandgap semiconductors, which is a difficult task. In this work, an approach is proposed and experimentally demonstrated to counter the challenges. The active region of the heterostructure light emitting diode uses ultrasmall epitaxially grown GaN quantum dots. Remarkably, the optical emission energy from GaN is pushed from 365?nm (3.4?eV, the bulk bandgap) to below 240?nm (>5.2?eV) because of extreme quantum confinement in the dots. This is possible because of the peculiar bandstructure and band alignments in the GaN/AlN system. This active region design crucially enables two further innovations for efficient carrier injection: Tunnel injection of carriers and polarization-induced p-type doping. The combination of these three advances results in major boosts in electroluminescence in deep-ultraviolet light emitting diodes and lays the groundwork for electrically pumped short-wavelength lasers.

  20. Molecular Level Assessment of Thermal Transport and Thermoelectricity in Materials: From Bulk Alloys to Nanostructures 

    E-Print Network [OSTI]

    Kinaci, Alper

    2013-05-02

    show that both phonon group velocities and life times are smaller in BN systems. Quantum corrections are also discussed for these classical simulations. The chemical and structural diversity that could be attained by mixing hexagonal boron nitride...

  1. An experiment to test the viability of a gallium-arsenide cathode in a SRF electron gun

    SciTech Connect (OSTI)

    Kewisch,J.; Ben-Zvi, I.; Rao, T.; Burrill, A.; Pate, D.; Wu, Q.; Todd, R.; Wang, E.; Bluem, H.; Holmes, D.; Schultheiss, T.

    2009-05-04

    Strained gallium arsenide cathodes are used in electron guns for the production of polarized electrons. In order to have a sufficient quantum efficiency lifetime of the cathode the vacuum in the gun must be 10{sup -11} Torr or better, so that the cathode is not destroyed by ion back bombardment or through contamination with residual gases. All successful polarized guns are DC guns, because such vacuum levels can not be obtained in normal conducting RF guns. A superconductive RF gun may provide a sufficient vacuum level due to cryo-pumping of the cavity walls. We report on the progress of our experiment to test such a gun with normal GaAs-Cs crystals.

  2. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect (OSTI)

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  3. A study into effects of CO{sub 2} laser melting of nitrided Ti-6Al-4V alloy

    SciTech Connect (OSTI)

    Mohammed, M.A. [Saudi Aramco, Dhahran (Saudi Arabia); Hashmi, M.S.J. [Dublin City Univ. (Ireland); Yilbas, B.S. [KFDUPM, Dhahran (Saudi Arabia)

    1997-10-01

    Multiple treatment of engineering surfaces can provide improved surface properties that cannot be obtained by a single surface treatment. Consequently, this study investigates the effects of laser melting on the microstructures of plasma nitrided Ti-6Al-4V alloy. The study consists of two parts. In the first part, governing equations pertinent to the laser melting process are developed, and temperature variation across the melted zone is predicted. In the second, an experiment is conducted to nitride the surface of the alloy through plasma nitriding process and to melt the plasma nitrided and the untreated alloy surfaces with a CO{sub 2} laser beam. The resulting metallurgical changes are examined using x-ray diffraction (XRD), energy-dispersive spectrometry (EDS), and scanning electron microscopy (SEM) techniques. It is shown that three distinct nitride layers are formed in the vicinity of the alloy surface prior to the laser melting process, and that after the melting process nitrided species are depleted while cellular and dendritic structures are formed. In addition, the structure consisting of transformed {beta} containing coarse and fine acicular {alpha} is observed in the melted regions.

  4. Structure analysis of aluminium silicon manganese nitride precipitates formed in grain-oriented electrical steels

    SciTech Connect (OSTI)

    Bernier, Nicolas, E-mail: n.bernier@yahoo.fr [OCAS N.V., ArcelorMittal Global R and D Gent, Pres. J.F. Kennedylaan 3, 9060 Zelzate (Belgium); Xhoffer, Chris [OCAS N.V., ArcelorMittal Global R and D Gent, Pres. J.F. Kennedylaan 3, 9060 Zelzate (Belgium); Van De Putte, Tom, E-mail: tom.vandeputte@arcelormittal.com [OCAS N.V., ArcelorMittal Global R and D Gent, Pres. J.F. Kennedylaan 3, 9060 Zelzate (Belgium); Galceran, Montserrat [Université Libre de Bruxelles, 4MAT (Materials Engineering, Characterization, Synthesis and Recycling), Avenue F.D. Roosevelt 50, 1050 Brussels (Belgium); CIC Energigune, Albert Einstein 48, 01510 Mińano (Álava) (Spain); Godet, Stéphane [Université Libre de Bruxelles, 4MAT (Materials Engineering, Characterization, Synthesis and Recycling), Avenue F.D. Roosevelt 50, 1050 Brussels (Belgium)

    2013-12-15

    We report a detailed structural and chemical characterisation of aluminium silicon manganese nitrides that act as grain growth inhibitors in industrially processed grain-oriented (GO) electrical steels. The compounds are characterised using energy dispersive X-ray spectrometry (EDX) and energy filtered transmission electron microscopy (EFTEM), while their crystal structures are analysed using X-ray diffraction (XRD) and TEM in electron diffraction (ED), dark-field, high-resolution and automated crystallographic orientation mapping (ACOM) modes. The chemical bonding character is determined using electron energy loss spectroscopy (EELS). Despite the wide variation in composition, all the precipitates exhibit a hexagonal close-packed (h.c.p.) crystal structure and lattice parameters of aluminium nitride. The EDX measurement of ? 900 stoichiometrically different precipitates indicates intermediate structures between pure aluminium nitride and pure silicon manganese nitride, with a constant Si/Mn atomic ratio of ? 4. It is demonstrated that aluminium and silicon are interchangeably precipitated with the same local arrangement, while both Mn{sup 2+} and Mn{sup 3+} are incorporated in the h.c.p. silicon nitride interstitial sites. The oxidation of the silicon manganese nitrides most likely originates from the incorporation of oxygen during the decarburisation annealing process, thus creating extended planar defects such as stacking faults and inversion domain boundaries. The chemical composition of the inhibitors may be written as (AlN){sub x}(SiMn{sub 0.25}N{sub y}O{sub z}){sub 1?x} with x ranging from 0 to 1. - Highlights: • We study the structure of (Al,Si,Mn)N inhibitors in grain oriented electrical steels. • Inhibitors have the hexagonal close-packed symmetry with lattice parameters of AlN. • Inhibitors are intermediate structures between pure AlN and (Si,Mn)N with Si/Mn ? 4. • Al and Si share the same local arrangement; Mn is incorporated in both Mn{sup 2+} and Mn{sup 3+}. • Oxygen incorporation is invoked to account for the thermal stability of (Al,Si,Mn)N.

  5. Brane-Bulk energy exchange and agegraphic dark energy

    E-Print Network [OSTI]

    Ahmad Sheykhi

    2010-02-06

    We consider the agegraphic models of dark energy in a braneworld scenario with brane-bulk energy exchange. We assume that the adiabatic equation for the dark matter is satisfied while it is violated for the agegraphic dark energy due to the energy exchange between the brane and the bulk. Our study shows that with the brane-bulk interaction, the equation of state parameter of agegraphic dark energy on the brane, $w_D$, can have a transition from normal state where $w_D >-1 $ to the phantom regime where $w_D energy always satisfies $w^{\\mathrm{eff}}_D\\geq-1$.

  6. Surface morphology and electronic structure of bulk single crystal -Ga2O3,,100...

    E-Print Network [OSTI]

    Olmstead, Marjorie

    termination contains both gallium and oxygen, and this surface does not exhibit a reconstruction. The valence of main group elements other than Al2O3 exist,4 they are scarce. This is at least partially due-temperature gas sensors whose conductivity varies with the partial pressure of oxidizing or reducing gases

  7. Phase transformations of nano-sized cubic boron nitride to white graphene and white graphite

    SciTech Connect (OSTI)

    Dang, Hongli; Liu, Yingdi; Xue, Wenhua; Anderson, Ryan S.; Sewell, Cody R. [Department of Physics and Engineering Physics, The University of Tulsa, Tulsa, Oklahoma 74104 (United States); Xue, Sha; Crunkleton, Daniel W. [Department of Chemical Engineering, The University of Tulsa, Tulsa, Oklahoma 74104 (United States); Institute of Alternate Energy, The University of Tulsa, Tulsa, Oklahoma 74104 (United States); Shen, Yaogen [Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Kowloon (Hong Kong); Wang, Sanwu, E-mail: sanwu-wang@utulsa.edu [Department of Physics and Engineering Physics, The University of Tulsa, Tulsa, Oklahoma 74104 (United States); Institute of Alternate Energy, The University of Tulsa, Tulsa, Oklahoma 74104 (United States)

    2014-03-03

    We report quantum-mechanical investigations that predict the formation of white graphene and nano-sized white graphite from the first-order phase transformations of nano-sized boron nitride thin-films. The phase transformations from the nano-sized diamond-like structure, when the thickness d?>?1.4?nm, to the energetically more stable nano-sized white graphite involve low activation energies of less than 1.0?eV. On the other hand, the diamond-like structure transforms spontaneously to white graphite when d???1.4?nm. In particular, the two-dimensional structure with single-layer boron nitride, the so-called white graphene, could be formed as a result of such transformation.

  8. A bulk-flow model of angled injection Lomakin bearings 

    E-Print Network [OSTI]

    Soulas, Thomas Antoine Theo

    2001-01-01

    A bulk-flow model for determination of the leakage and dynamic force characteristics of angled injection Lomakin bearings is presented. Zeroth- and first-order equations describe the equilibrium flow for a centered bearing and the perturbed flow...

  9. Supply chain management in the dry bulk shipping industry

    E-Print Network [OSTI]

    Nicholson, Bryan E. (Bryan Edward)

    2006-01-01

    This paper is intended to show the importance of supply chain management in the dry-bulk shipping industry. A hypothetical company, the Texas Grain and Bakery Corporation, was created. The values and calculations used are ...

  10. Structural and economic analysis of capesize bulk carriers

    E-Print Network [OSTI]

    Hadjiyiannis, Nicholas

    2010-01-01

    Structural failures of bulk carriers continue to account for the loss of many lives every year. Capes are particularly vulnerable to cracking because of their large length, their trade in high density cargos, and the high ...

  11. New nano structure approaches for bulk thermoelectric materials

    E-Print Network [OSTI]

    Kim, Jeonghoon

    2010-01-01

    developments in bulk thermoelectric materials", M. Mater.and M. D. Drsselhaus, "Thermoelectric figure of merit of aO'Quinn, " Thin-film thermoelectric devices with high room-

  12. Costs, Savings and Financing Bulk Tanks on Texas Dairy Farms. 

    E-Print Network [OSTI]

    Moore, Donald S.; Stelly, Randall; Parker, Cecil A.

    1958-01-01

    ,s - / cwdh\\@ Costs, Savi~gs;.itd Financing Bulk Tanks on Texas Dairy Farms . ?. I I 1 i I I ! ,:ravings in hauling - 10 cents I \\ \\ 1 \\ savings in hauling - 15 cents -----------____--- 'savings in hauling - 20 cents Annual production..., 1,000 pounds Estimated number of years required for savings from a bulk tank to equal additional costs at different levels of production and savings in hauling costs. TEXAS AGRICULTURAL EXPERIMEN'T STATION R. D. LEWIS. DIRECTOR. COLLEGE STATION...

  13. Enhancement of bulk photovoltaic effect in topological insulators

    E-Print Network [OSTI]

    Tan, Liang Z

    2015-01-01

    We investigate the shift current bulk photovoltaic response of materials close to a band inversion topological phase transition. We find that the bulk photocurrent reverses direction across the band inversion transition, and that its magnitude is enhanced in the vicinity of the phase transition. These results are demonstrated with first principles DFT calculations of BiTeI and CsPbI$_3$ under hydrostatic pressure, and explained with an analytical model, suggesting that this phenomenon remains robust across disparate material systems.

  14. RAPID/BulkTransmission/Environment/Nevada | Open Energy Information

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  15. RAPID/BulkTransmission/Environment/New Mexico | Open Energy Information

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  16. RAPID/BulkTransmission/Environment/Oregon | Open Energy Information

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  17. RAPID/BulkTransmission/Environment/Texas | Open Energy Information

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  18. RAPID/BulkTransmission/Environment/Utah | Open Energy Information

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  19. RAPID/BulkTransmission/Environment/Washington | Open Energy Information

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  20. RAPID/BulkTransmission/Environment/Wyoming | Open Energy Information

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  1. RAPID/BulkTransmission/Exploration | Open Energy Information

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  2. RAPID/BulkTransmission/Federal | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsourceBulkTransmission/Environment/Nevada < RAPID‎ | BulkTransmission‎ |

  3. RAPID/BulkTransmission/Hawaii | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsourceBulkTransmission/Environment/Nevada < RAPID‎ | BulkTransmission‎

  4. RAPID/BulkTransmission/Montana | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsourceBulkTransmission/Environment/Nevada < RAPID‎ |RAPID/BulkTransmission/Montana < RAPID‎ |

  5. RAPID/BulkTransmission/Nevada | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsourceBulkTransmission/Environment/Nevada < RAPID‎ |RAPID/BulkTransmission/Montana < RAPID‎

  6. RAPID/BulkTransmission/New Mexico | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsourceBulkTransmission/Environment/Nevada < RAPID‎ |RAPID/BulkTransmission/Montana <

  7. RAPID/BulkTransmission/Oregon | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsourceBulkTransmission/Environment/Nevada < RAPID‎ |RAPID/BulkTransmission/Montana

  8. RAPID/BulkTransmission/Site Considerations | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsourceBulkTransmission/Environment/Nevada < RAPID‎RAPID/BulkTransmission/Site Considerations < RAPID‎ |

  9. RAPID/BulkTransmission/Texas | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsourceBulkTransmission/Environment/Nevada < RAPID‎RAPID/BulkTransmission/Site Considerations < RAPID‎

  10. RAPID/BulkTransmission/Transmission Siting & Interconnection | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsourceBulkTransmission/Environment/Nevada < RAPID‎RAPID/BulkTransmission/Site Considerations <

  11. RAPID/BulkTransmission/Utah | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsourceBulkTransmission/Environment/Nevada < RAPID‎RAPID/BulkTransmission/Site Considerations

  12. RAPID/BulkTransmission/Washington | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsourceBulkTransmission/Environment/Nevada < RAPID‎RAPID/BulkTransmission/Site

  13. RAPID/BulkTransmission/Water Quality | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsourceBulkTransmission/Environment/Nevada < RAPID‎RAPID/BulkTransmission/SiteWater Quality < RAPID‎ |

  14. RAPID/BulkTransmission/Water Use | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsourceBulkTransmission/Environment/Nevada < RAPID‎RAPID/BulkTransmission/SiteWater Quality < RAPID‎

  15. RAPID/BulkTransmission/Wyoming | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsourceBulkTransmission/Environment/Nevada < RAPID‎RAPID/BulkTransmission/SiteWater Quality <

  16. Amber light-emitting diode comprising a group III-nitride nanowire active region

    DOE Patents [OSTI]

    Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

    2014-07-22

    A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

  17. Integrated rig for the production of boron nitride nanotubes via the pressurized vapor-condenser method

    DOE Patents [OSTI]

    Smith, Michael W; Jordan, Kevin C

    2014-03-25

    An integrated production apparatus for production of boron nitride nanotubes via the pressure vapor-condenser method. The apparatus comprises: a pressurized reaction chamber containing a continuously fed boron containing target having a boron target tip, a source of pressurized nitrogen and a moving belt condenser apparatus; a hutch chamber proximate the pressurized reaction chamber containing a target feed system and a laser beam and optics.

  18. Ligand-Based Reduction of CO2 to CO Mediated by an Anionic Niobium Nitride Complex

    E-Print Network [OSTI]

    Silvia, Jared Scott

    The terminal nitride anion complex [Na][N?Nb(N[tBu]Ar)3] ([Na][1], Ar = 3,5-Me2C6H3) reacts quantitatively with CO2 to give the carbamate complex [Na][O2CN?Nb(N[tBu]Ar)3] ([Na][O2C-1]). The structure of [Na][O2C-1] as the ...

  19. Dispersion engineered high-Q silicon Nitride Ring-Resonators via Atomic Layer Deposition

    E-Print Network [OSTI]

    Riemensberger, Johann; Herr, Tobias; Brasch, Victor; Holzwarth, Ronald; Kippenberg, Tobias J

    2012-01-01

    We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition (ALD). Both, magnitude and bandwidth of anomalous dispersion can be significantly increased. All results are confirmed by high resolution frequency-comb-assisted-diode-laser spectroscopy and are in very good agreement with the simulated modification of the mode spectrum.

  20. Non-Destructive Spent Fuel Characterization with Semi-Conducting Gallium Arsinde Neutron Imaging Arrays

    SciTech Connect (OSTI)

    Douglas S. McGregor; Holly K. Gersch; Jeffrey D. Sanders; John C. Lee; Mark D. Hammig; Michael R. Hartman; Yong Hong Yang; Raymond T. Klann; Brian Van Der Elzen; John T. Lindsay; Philip A. Simpson

    2002-01-30

    High resistivity bulk grown GaAs has been used to produce thermal neutron imaging devices for use in neutron radiography and characterizing burnup in spent fuel. The basic scheme utilizes a portable Sb/Be source for monoenergetic (24 keV) neutron radiation source coupled to an Fe filter with a radiation hard B-coated pixellated GaAs detector array as the primary neutron detector. The coated neutron detectors have been tested for efficiency and radiation hardness in order to determine their fitness for the harsh environments imposed by spent fuel. Theoretical and experimental results are presented, showing detector radiation hardness, expected detection efficiency and the spatial resolution from such a scheme. A variety of advanced neutron detector designs have been explored, with experimental results achieving 13% thermal neutron detection efficiency while projecting the possibility of over 30% thermal neutron detection efficiency.

  1. Waste Form Qualification Compliance Strategy for Bulk Vitrification

    SciTech Connect (OSTI)

    Bagaasen, Larry M.; Westsik, Joseph H.; Brouns, Thomas M.

    2005-01-03

    The Bulk Vitrification System is being pursued to assist in immobilizing the low-activity tank waste from the 53 million gallons of radioactive waste in the 177 underground storage tanks on the Hanford Site. To demonstrate the effectiveness of the bulk vitrification process, a research and development facility known as the Demonstration Bulk Vitrification System (DBVS) is being built to demonstrate the technology. Specific performance requirements for the final packaged bulk vitrification waste form have been identified. In addition to the specific product-performance requirements, performance targets/goals have been identified that are necessary to qualify the waste form but do not lend themselves to specifications that are easily verified through short-term testing. Collectively, these form the product requirements for the DBVS. This waste-form qualification (WFQ) strategy document outlines the general strategies for achieving and demonstrating compliance with the BVS product requirements. The specific objectives of the WFQ activities are discussed, the bulk vitrification process and product control strategy is outlined, and the test strategy to meet the WFQ objectives is described. The DBVS product performance targets/goals and strategies to address those targets/goals are described. The DBVS product-performance requirements are compared to the Waste Treatment and Immobilization Plant immobilized low-activity waste product specifications. The strategies for demonstrating compliance with the bulk vitrification product requirements are presented.

  2. Finsler geometric perspective on the bulk flow in the universe

    E-Print Network [OSTI]

    Zhe Chang; Ming-Hua Li; Sai Wang

    2013-05-09

    Astronomical observations showed that there may exist a bulk flow with peculiar velocities in the universe, which contradicts with the (\\Lambda)CDM model. The bulk flow reveals that the observational universe is anisotropic at large scales. In fact, a more reliable observation on the anisotropy of spacetime comes from the CMB power spectra. The WMAP and Planck satellites both show that there is a hemispherical power asymmetry at large-angular scales. In this paper, we propose a "wind" scenario to the bulk flow (or the anisotropy of spacetime). Under the influence of the "wind", the spacetime metric could become a Finsler structure. By resolving the null geodesic equation, we obtain the modified luminosity distance, which has a dipolar form at the leading order. Thus, the "wind" describes well the bulk flow. In addition, we perform a least-(\\chi^2) fit to the data of type Ia supernovae (SNe Ia) in the Union2.1 compilation. The peculiar velocity of the bulk flow has an upper limit (v_{bulk}\\lesssim 4000 \\rm{km/s}), which is compatible with all the existing observational values.

  3. MOCVD synthesis of group III-nitride heterostructure nanowires for solid-state lighting.

    SciTech Connect (OSTI)

    Wang, George T.; Creighton, James Randall; Talin, Albert Alec

    2006-11-01

    Solid-state lighting (SSL) technologies, based on semiconductor light emitting devices, have the potential to reduce worldwide electricity consumption by more than 10%, which could significantly reduce U.S. dependence on imported energy and improve energy security. The III-nitride (AlGaInN) materials system forms the foundation for white SSL and could cover a wide spectral range from the deep UV to the infrared. For this LDRD program, we have investigated the synthesis of single-crystalline III-nitride nanowires and heterostructure nanowires, which may possess unique optoelectronic properties. These novel structures could ultimately lead to the development of novel and highly efficient SSL nanodevice applications. GaN and III-nitride core-shell heterostructure nanowires were successfully synthesized by metal organic chemical vapor deposition (MOCVD) on two-inch wafer substrates. The effect of process conditions on nanowire growth was investigated, and characterization of the structural, optical, and electrical properties of the nanowires was also performed.

  4. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

    SciTech Connect (OSTI)

    Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

    1994-10-01

    The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  5. Power mixture and green body for producing silicon nitride base articles of high fracture toughness and strength

    DOE Patents [OSTI]

    Huckabee, M.L.; Buljan, S.T.; Neil, J.T.

    1991-09-17

    A powder mixture and a green body for producing a silicon nitride-based article of improved fracture toughness and strength are disclosed. The powder mixture includes (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 [mu]m and a surface area of about 8-12m[sup 2]g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 [mu]m and a surface area of about 2-4 m[sup 2]/g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. The green body is formed from the powder mixture, an effective amount of a suitable oxide densification aid, and an effective amount of a suitable organic binder. No Drawings

  6. GaN-Ready Aluminum Nitride Substrates for Cost-Effective, Very Low Dislocation Density III-Nitride LED's

    SciTech Connect (OSTI)

    Sandra Schujman; Leo Schowalter

    2010-10-15

    The objective of this project was to develop and then demonstrate the efficacy of a costeffective approach for a low defect density substrate on which AlInGaN LEDs can be fabricated. The efficacy of this “GaN-ready” substrate would then be tested by growing high efficiency, long lifetime InxGa1-xN blue LEDs. The approach used to meet the project objectives was to start with low dislocation density AlN single-crystal substrates and grow graded AlxGa1-xN layers on top. Pseudomorphic AlxGa1-xN epitaxial layers grown on bulk AlN substrates were used to fabricate light emitting diodes and demonstrate better device performance as a result of the low defect density in these layers when benched marked against state-of-the-art LEDs fabricated on sapphire substrates. The pseudomorphic LEDs showed excellent output powers compared to similar wavelength devices grown on sapphire substrates, with lifetimes exceeding 10,000 hours (which was the longest time that could reliably be estimated). In addition, high internal quantum efficiencies were demonstrated at high driving current densities even though the external quantum efficiencies were low due to poor photon extraction. Unfortunately, these pseudomorphic LEDs require high Al content so they emit in the ultraviolet. Sapphire based LEDs typically have threading dislocation densities (TDD) > 108 cm-2 while the pseudomorphic LEDs have TDD ? 105 cm-2. The resulting TDD, when grading the AlxGa1-xN layer all the way to pure GaN to produce a “GaN-ready” substrate, has varied between the mid 108 down to the 106 cm-2. These inconsistencies are not well understood. Finally, an approach to improve the LED structures on AlN substrates for light extraction efficiency was developed by thinning and roughening the substrate.

  7. Dark goo: Bulk viscosity as an alternative to dark energy

    E-Print Network [OSTI]

    Jean-Sebastien Gagnon; Julien Lesgourgues

    2011-09-16

    We present a simple (microscopic) model in which bulk viscosity plays a role in explaining the present acceleration of the universe. The effect of bulk viscosity on the Friedmann equations is to turn the pressure into an "effective" pressure containing the bulk viscosity. For a sufficiently large bulk viscosity, the effective pressure becomes negative and could mimic a dark energy equation of state. Our microscopic model includes self-interacting spin-zero particles (for which the bulk viscosity is known) that are added to the usual energy content of the universe. We study both background equations and linear perturbations in this model. We show that a dark energy behavior is obtained for reasonable values of the two parameters of the model (i.e. the mass and coupling of the spin-zero particles) and that linear perturbations are well-behaved. There is no apparent fine tuning involved. We also discuss the conditions under which hydrodynamics holds, in particular that the spin-zero particles must be in local equilibrium today for viscous effects to be important.

  8. Dark goo: Bulk viscosity as an alternative to dark energy

    E-Print Network [OSTI]

    Gagnon, Jean-Sebastien

    2011-01-01

    We present a simple (microscopic) model in which bulk viscosity plays a role in explaining the present acceleration of the universe. The effect of bulk viscosity on the Friedmann equations is to turn the pressure into an "effective" pressure containing the bulk viscosity. For a sufficiently large bulk viscosity, the effective pressure becomes negative and could mimic a dark energy equation of state. Our microscopic model includes self-interacting spin-zero particles (for which the bulk viscosity is known) that are added to the usual energy content of the universe. We study both background equations and linear perturbations in this model. We show that a dark energy behavior is obtained for reasonable values of the two parameters of the model (i.e. the mass and coupling of the spin-zero particles) and that linear perturbations are well-behaved. There is no apparent fine tuning involved. We also discuss the conditions under which hydrodynamics holds, in particular that the spin-zero particles must be in local eq...

  9. Bulk emission of scalars by a rotating black hole

    E-Print Network [OSTI]

    M. Casals; S. R. Dolan; P. Kanti; E. Winstanley

    2008-07-17

    We study in detail the scalar-field Hawking radiation emitted into the bulk by a higher-dimensional, rotating black hole. We numerically compute the angular eigenvalues, and solve the radial equation of motion in order to find transmission factors. The latter are found to be enhanced by the angular momentum of the black hole, and to exhibit the well-known effect of superradiance. The corresponding power spectra for scalar fields show an enhancement with the number of dimensions, as in the non-rotating case. We compute the total mass loss rate of the black hole for a variety of black-hole angular momenta and bulk dimensions, and find that, in all cases, the bulk emission remains significantly smaller than the brane emission. The angular-momentum loss rate is also computed and found to have a smaller value in the bulk than on the brane. We present accurate bulk-to-brane emission ratios for a range of scenarios.

  10. Process for the production of hydrogen and carbonyl sulfide from hydrogen sulfide and carbon monoxide using a metal boride, nitride, carbide and/or silicide catalyst

    SciTech Connect (OSTI)

    McGuiggan, M.F.; Kuch, P.L.

    1984-05-08

    Hydrogen and carbonyl sulfide are produced by a process comprising contacting gaseous hydrogen sulfide with gaseous carbon monoxide in the presence of a metal boride, carbide, nitride and/or silicide catalyst, such as titanium carbide, vanadium boride, manganese nitride or molybdenum silicide.

  11. Applicability of carbon and boron nitride nanotubes as biosensors: Effect of biomolecular adsorption on the transport properties of carbon and boron

    E-Print Network [OSTI]

    Pandey, Ravi

    Applicability of carbon and boron nitride nanotubes as biosensors: Effect of biomolecular;Applicability of carbon and boron nitride nanotubes as biosensors: Effect of biomolecular adsorption transport- ers,10 biosensors,11 and field effect transistors12 (FET) have been reported. DNA has also been

  12. Physics PhD scholarship available in one the worlds top 10 cities Scanning Tunneling Microscopy studies of rare earth nitrides and related materials

    E-Print Network [OSTI]

    Hickman, Mark

    studies of rare earth nitrides and related materials This is an opportunity to explore how new rare earth nitride materials can be made and how they can be probed using scanning tunneling microscopy. Scanning Tunneling Microscopy is a powerful tool to obtain both atomic resolution imaging of the surface of materials

  13. Si3N4 on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure

    E-Print Network [OSTI]

    Rockett, Angus

    from XPS as a function of photoelectron takeoff angle, initially increased rapidly with nitridation either from the higher temperature or from nitridation of all of the Si, leaving the Si3N4 in direct contact with the GaAs. © 1998 American Vacuum Society. S0734-211X 98 00302-3 I. INTRODUCTION Ga

  14. Synthesis and optical properties of CsC1-doped gallium-sodium-sulfide glasses

    SciTech Connect (OSTI)

    Hehlen, Markus P [Los Alamos National Laboratory; Bennett, Bryan L [Los Alamos National Laboratory; Williams, Darrick J [Los Alamos National Laboratory; Muenchausen, Ross E [Los Alamos National Laboratory; Castro, Alonso [Los Alamos National Laboratory; Tornga, Stephanie C [Los Alamos National Laboratory

    2009-01-01

    Ga{sub 2}S{sub 3}-Na{sub 2}S (GNS) glasses doped with CsCl were synthesized in open crucibles under inert atmosphere. The evaporative loss of CsCl during glass melting was measured by energy dispersive X-ray spectroscopy and corrected for by biasing the CsCl concentration in the mixture of starting materials to obtain glasses with accurately controlled stoichiometry. Glass transition temperatures, refractive index dispersions, and band edge energies were measured for four GNS:CsCl glasses, and the respective values were found to significantly improve over earlier studies that did not mitigate CsCl evaporative losses. The refractive index dispersion measurements indicate that the Cs{sup +} and Cl{sup -} radii are 16% larger in GNS:CsCl glass than in bulk crystalline CsCl. The band edge energy increases from 2.97 eV in GNS glass to 3.32 eV in GNS glass doped with 20 mol% CsCl as a result of introducing Cl{sup -} ions having a large optical electronegativity. The large bandgap of 3.32 eV and the low (450 cm{sup -1}) phonon energy make GNS:20%CsCl an attractive host material for rare-earth ions with radiative transitions in the near ultra-violet, visible, and near-infrared spectral regions.

  15. Palladium diffusion into bulk copper via the (100) surface.

    SciTech Connect (OSTI)

    Bussmann, Ezra; Pohl, Karsten; Sun, Jiebing; Kellogg, Gary Lee

    2009-01-01

    Using low-energy electron microscopy, we measure the diffusion of Pd into bulk Cu at the Cu(100) surface. Interdiffusion is tracked by measuring the dissolution of the Cu(100)-c(2 x 2)-Pd surface alloy during annealing (T > 240 C). The activation barrier for Pd diffusion from the surface alloy into the bulk is determined to be (1.8 {+-} 0.6) eV. During annealing, we observe the growth of a new layer of Cu near step edges. Under this new Cu layer, dilute Pd remaining near the surface develops a layered structure similar to the Cu{sub 3}Pd L 1{sub 2} bulk alloy phase.

  16. No evidence for bulk velocity from type Ia supernovae

    E-Print Network [OSTI]

    Huterer, Dragan; Schmidt, Fabian

    2015-01-01

    We revisit the effect of peculiar velocities on low-redshift type Ia supernovae. Velocities introduce an additional guaranteed source of correlations between supernova magnitudes that should be considered in all analyses of nearby supernova samples but has largely been neglected in the past. Applying a likelihood analysis to the latest compilation of nearby supernovae, we find no evidence for the presence of these correlations, although, given the significant noise, the data is also consistent with the correlations predicted for the standard LCDM model. We then consider the dipolar component of the velocity correlations - the frequently studied "bulk velocity" - and explicitly demonstrate that including the velocity correlations in the data covariance matrix is crucial for drawing correct and unambiguous conclusions about the bulk flow. In particular, current supernova data is consistent with no excess bulk flow on top of what is expected in LCDM and effectively captured by the covariance. We further clarify ...

  17. Properties of Bulk Sintered Silver As a Function of Porosity

    SciTech Connect (OSTI)

    Wereszczak, Andrew A; Vuono, Daniel J; Wang, Hsin; Ferber, Mattison K; Liang, Zhenxian

    2012-06-01

    This report summarizes a study where various properties of bulk-sintered silver were investigated over a range of porosity. This work was conducted within the National Transportation Research Center's Power Device Packaging project that is part of the DOE Vehicle Technologies Advanced Power Electronics and Electric Motors Program. Sintered silver, as an interconnect material in power electronics, inherently has porosity in its produced structure because of the way it is made. Therefore, interest existed in this study to examine if that porosity affected electrical properties, thermal properties, and mechanical properties because any dependencies could affect the intended function (e.g., thermal transfer, mechanical stress relief, etc.) or reliability of that interconnect layer and alter how its performance is modeled. Disks of bulk-sintered silver were fabricated using different starting silver pastes and different sintering conditions to promote different amounts of porosity. Test coupons were harvested out of the disks to measure electrical resistivity and electrical conductivity, thermal conductivity, coefficient of thermal expansion, elastic modulus, Poisson's ratio, and yield stress. The authors fully recognize that the microstructure of processed bulk silver coupons may indeed not be identical to the microstructure produced in thin (20-50 microns) layers of sintered silver. However, measuring these same properties with such a thin actual structure is very difficult, requires very specialized specimen preparation and unique testing instrumentation, is expensive, and has experimental shortfalls of its own, so the authors concluded that the herein measured responses using processed bulk sintered silver coupons would be sufficient to determine acceptable values of those properties. Almost all the investigated properties of bulk sintered silver changed with porosity content within a range of 3-38% porosity. Electrical resistivity, electrical conductivity, thermal conductivity, elastic modulus, Poisson's ratio, and yield stress all depended on the porosity content in bulk-sintered silver. The only investigated property that was independent of porosity in that range was coefficient of thermal expansion.

  18. Stress Tensor and Bulk Viscosity in Relativistic Nuclear Collisions

    E-Print Network [OSTI]

    Rainer J. Fries; Berndt Müller; Andreas Schäfer

    2008-08-30

    We discuss the influence of different initial conditions for the stress tensor and the effect of bulk viscosity on the expansion and cooling of the fireball created in relativistic heavy-ion collisions. In particular, we explore the evolution of longitudinal and transverse components of the pressure and the extent of dissipative entropy production in the one-dimensional, boost-invariant hydrodynamic model. We find that a bulk viscosity consistent with recent estimates from lattice QCD further slows the equilibration of the system, however it does not significantly increase the entropy produced.

  19. Strength and fatigue of NT551 silicon nitride and NT551 diesel exhaust valves

    SciTech Connect (OSTI)

    Andrews, M.J.; Werezczak, A.A.; Kirkland, T.P.; Breder, K.

    2000-02-01

    The content of this report is excerpted from Mark Andrew's Ph.D. Thesis (Andrews, 1999), which was funded by a DOE/OTT High Temperature Materials Laboratory Graduate Fellowship. It involves the characterization of NT551 and valves fabricated with it. The motivations behind using silicon nitride (Si{sub 3}N{sub 4}) as an exhaust valve for a diesel engine are presented in this section. There are several economic factors that have encouraged the design and implementation of ceramic components for internal combustion (IC) engines. The reasons for selecting the diesel engine valve for this are also presented.

  20. Silicon-nitride photonic circuits interfaced with monolayer MoS$_2$

    E-Print Network [OSTI]

    Wei, Guohua; Czaplewski, David A; Jung, Il Woong; Stern, Nathaniel P

    2015-01-01

    We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through measurements of cavity transmission. The absorption of the monolayer semiconductor flakes in this geometry is determined to be 850 dB/cm, which is larger than that of graphene and black phosphorus with the same thickness. This technique can be applied to diverse monolayer semiconductors for assembling hybrid optoelectronic devices such as photodetectors and modulators operating over a wide spectral range.

  1. Dual-pumped degenerate Kerr oscillator in a silicon nitride microresonator

    E-Print Network [OSTI]

    Okawachi, Yoshitomo; Luke, Kevin; Carvalho, Daniel O; Ramelow, Sven; Farsi, Alessandro; Lipson, Michal; Gaeta, Alexander L

    2015-01-01

    We demonstrate a degenerate parametric oscillator in a silicon-nitride microresonator. We use two frequency-detuned pump waves to perform parametric four-wave mixing and operate in the normal group-velocity dispersion regime to produce signal and idler fields that are frequency degenerate. Our theoretical modeling shows that this regime enables generation of bimodal phase states, analogous to the \\c{hi}(2)-based degenerate OPO. Our system offers potential for realization of CMOS-chip-based coherent optical computing and an all-optical quantum random number generator.

  2. Computing hypersurfaces which minimize surface energy plus bulk energy

    E-Print Network [OSTI]

    Sullivan, John M.

    [Page 17] Computing hypersurfaces which minimize surface energy plus bulk energy John M. Sullivan this idea to construct an algorithm to find the minimum-energy surface on any boundary, where the surface energy density can depend on position or normal vector. Here we extend this algorithm to allow not only

  3. A phase space analysis for nonlinear bulk viscous cosmology

    E-Print Network [OSTI]

    Giovanni Acquaviva; Aroonkumar Beesham

    2015-05-08

    We consider a Friedmann-Robertson-Walker spacetime filled with both viscous radiation and nonviscous dust. The former has a bulk viscosity which is proportional to an arbitrary power of the energy density, i.e. $\\zeta \\propto \\rho_v^{\

  4. TECHNICAL POLLUTION PREVENTION GUIDE FOR DRY BULK TERMINALS

    E-Print Network [OSTI]

    #12;TECHNICAL POLLUTION PREVENTION GUIDE FOR DRY BULK TERMINALS IN THE LOWER FRASER BASIN DOE FRAP 1996-19 Prepared for: Enviromnent Canada Environmental Protection Fraser Pollution Abatement North's report was fůnded by Environment Canada under the Fraser River Action Plan through its Fraser Pollution

  5. INTERNAL ELECTROSTATIC TRANSDUCTION FOR BULK-MODE MEMS RESONATORS

    E-Print Network [OSTI]

    Afshari, Ehsan

    This paper demonstrates a new approach to electrostatic drive and detection of bulk acoustic resonators coupled into the fundamental bending mode. The approach was deemed inefficient because air-gap capacitive by filling the air-gaps with a low Young's modulus, high- dielectric material. A more practical approach

  6. Synthesis of bulk superhard semiconducting B-C material

    SciTech Connect (OSTI)

    Solozhenko, Vladimir L.; Dubrovinskaia, Natalia A.; Dubrovinsky, Leonid S.

    2004-08-30

    A bulk composite superhard material was synthesized from graphitelike BC{sub 3} at 20 GPa and 2300 K using a multianvil press. The material consists of intergrown boron carbide B{sub 4}C and B-doped diamond with 1.8 at.%B. The material exhibits semiconducting behavior and extreme hardness comparable with that of single-crystal diamond.

  7. Stress tensor and bulk viscosity in relativistic nuclear collisions 

    E-Print Network [OSTI]

    Fries, Rainer J.; Mueller, Berndt; Schaefer, Andreas.

    2008-01-01

    REVIEW C 78, 034913 (2008) Stress tensor and bulk viscosity in relativistic nuclear collisions Rainer J. Fries,1,2,3 Berndt Mu?ller,3,4 and Andreas Scha?fer3,5 1Cyclotron Institute and Department of Physics, Texas A&M University, College Station, Texas...

  8. Permanent magnet with MgB{sub 2} bulk superconductor

    SciTech Connect (OSTI)

    Yamamoto, Akiyasu, E-mail: yamamoto@appchem.t.u-tokyo.ac.jp [The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); JST-PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Ishihara, Atsushi; Tomita, Masaru [Railway Technical Research Institute, 2-8-38 Hikari, Kokubunji, Tokyo 185-8540 (Japan); Kishio, Kohji [The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan)

    2014-07-21

    Superconductors with persistent zero-resistance currents serve as permanent magnets for high-field applications requiring a strong and stable magnetic field, such as magnetic resonance imaging. The recent global helium shortage has quickened research into high-temperature superconductors (HTSs)—materials that can be used without conventional liquid-helium cooling to 4.2?K. Herein, we demonstrate that 40-K-class metallic HTS magnesium diboride (MgB{sub 2}) makes an excellent permanent bulk magnet, maintaining 3?T at 20?K for 1 week with an extremely high stability (<0.1 ppm/h). The magnetic field trapped in this magnet is uniformly distributed, as for single-crystalline neodymium-iron-boron. Magnetic hysteresis loop of the MgB{sub 2} permanent bulk magnet was determined. Because MgB{sub 2} is a simple-binary-line compound that does not contain rare-earth metals, polycrystalline bulk material can be industrially fabricated at low cost and with high yield to serve as strong magnets that are compatible with conventional compact cryocoolers, making MgB{sub 2} bulks promising for the next generation of Tesla-class permanent-magnet applications.

  9. Stresses resulting from compression of bulk cotton lint fibers 

    E-Print Network [OSTI]

    Chimbombi, Ezekiel Maswe

    1998-01-01

    materials to determine if bale tie breakage would occur. Young's modulus of bulk lint cotton was found to be 9 MPa and the Poisson's ratio was 0. 1, while 12 MPa was recorded for the shear modulus. The FEA analysis showed that round steel ties, at six ties...

  10. Small Molecule Solution-Processed Bulk Heterojunction Solar Cells

    E-Print Network [OSTI]

    Candea, George

    Small Molecule Solution-Processed Bulk Heterojunction Solar Cells Arthur Aebersold Supervisors: J in solution processed BHJ solar cells, which are made from a PCBM Squaraine DyeCyanine Dye Absorber Molecules solar cell performance show a trend for better devices with an intemediate active layer thickness

  11. Belt conveyors for bulk materials. 6th ed.

    SciTech Connect (OSTI)

    NONE

    2007-07-01

    The 16 chapters are entitled: Belt conveyor general applications economics; Design considerations; Characteristics and conveyability of bulk materials; Capacities, belt widths and speeds; Belt conveyor idlers; Belt tension and power engineering; Belt selection; Pulleys and shafts; Curves; Steep angle conveying; Belt cleaners and accessories; Transfer points; Conveyor motor drives and controls; Operation, maintenance and safety; Belt takeups; and Emerging technologies. 6 apps.

  12. A COMPREHENSIVE TECHNICAL REVIEW OF THE DEMONSTRATION BULK VITRIFICATION SYSTEM

    SciTech Connect (OSTI)

    SCHAUS, P.S.

    2006-09-29

    In May 2006, CH2M Hill Hanford Group, Inc. chartered an Expert Review Panel (ERP) to review the current status of the Demonstration Bulk Vitrification System (DBVS). It is the consensus of the ERP that bulk vitrification is a technology that requires further development and evaluation to determine its potential for meeting the Hanford waste stabilization mission. No fatal flaws (issues that would jeopardize the overall DBVS mission that cannot be mitigated) were found, given the current state of the project. However, a number of technical issues were found that could significantly affect the project's ability to meet its overall mission as stated in the project ''Justification of Mission Need'' document, if not satisfactorily resolved. The ERP recognizes that the project has changed from an accelerated schedule demonstration project to a formally chartered project that must be in full compliance with DOE 413.3 requirements. The perspective of the ERP presented herein, is measured against the formally chartered project as stated in the approved Justification of Mission Need document. A justification of Mission Need document was approved in July 2006 which defined the objectives for the DBVS Project. In this document, DOE concluded that bulk vitrification is a viable technology that requires additional development to determine its potential applicability to treatment of a portion of the Hanford low activity waste. The DBVS mission need statement now includes the following primary objectives: (1) process approximately 190,000 gallons of Tank S-109 waste into fifty 100 metric ton boxes of vitrified product; (2) store and dispose of these boxes at Hanford's Integrated Disposal Facility (IDF); (3) evaluate the waste form characteristics; (4) gather pilot plant operability data, and (5) develop the overall life cycle system performance of bulk vitrification and produce a comparison of the bulk vitrification process to building a second LAW Immobilization facility or other supplemental treatment alternatives as provided in M-62-08.

  13. CX-010895: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Development and Industrialization of Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Light Emitting Diodes LEDs on Patterned Sapphire Substrate (PSS) for Low Cost Emitter Architecture CX(s) Applied: B3.6 Date: 06/27/2013 Location(s): California Offices(s): National Energy Technology Laboratory

  14. Growth and magnetic property of antiperovskite manganese nitride films doped with Cu by molecular beam epitaxy

    SciTech Connect (OSTI)

    Yu, Fengmei; Ren, Lizhu; Meng, Meng; Wang, Yunjia; Yang, Mei; Wu, Shuxiang; Li, Shuwei

    2014-04-07

    Manganese nitrides thin films on MgO (100) substrates with and without Cu-doping have been fabricated by plasma assisted molecular beam epitaxy. Antiperovskite compounds Mn{sub 3.6}Cu{sub 0.4}N have been grown in the case of Cu-doping, and the pure Mn{sub 3}N{sub 2} single crystal has been obtained without Cu-doping. The Mn{sub 3.6}Cu{sub 0.4}N exhibits ferrimagnetism, and the magnetization of Mn{sub 3.6}Cu{sub 0.4}N increases upon the temperature decreasing from 300?K to 5?K, similar to Mn{sub 4}N. The exchange bias (EB) effects emerge in the Mn{sub 3.6}Cu{sub 0.4}N films. The EB behavior is originated from the interfaces between ferrimagnetic Mn{sub 3.6}Cu{sub 0.4}N and antiferromagnetic metal Mn, which is verified to be formed by the data of x-ray photoelectron spectroscopy. The present results not only provide a strategy for producing functional antiperovskite manganese nitrides, but also shed promising light on fabricating the exchange bias part of spintronic devices.

  15. Critical dimension improvement of plasma enhanced chemical vapor deposition silicon nitride thin films in GaAs devices

    E-Print Network [OSTI]

    Shapira, Yoram

    , Faculty of Engineering, Tel-Aviv University, Ramat-Aviv 69978, Israel Abstract Silicon nitride thin films. This is important since GaAs processing does not tolerate higher temperatures. However, using hydride source gases and Engineering B102 (2003) 352Á/357 www.elsevier.com/locate/mseb 0921-5107/03/$ - see front matter # 2003

  16. Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition

    E-Print Network [OSTI]

    Dietz, Nikolaus

    pressure chemical vapor deposition R. P. Bhatta, B. D. Thoms,a A. Weerasekera, A. G. U. Perera, M. Alevli properties of InN layer grown by high pressure chemical vapor deposition have been studied by high-nitride alloys is challenging under low pressure process conditions due to higher equilibrium vapor pressure

  17. Power mixture and green body for producing silicon nitride base & articles of high fracture toughness and strength

    DOE Patents [OSTI]

    Huckabee, Marvin L. (Marlboro, MA); Buljan, Sergej-Tomislav (Acton, MA); Neil, Jeffrey T. (Acton, MA)

    1991-01-01

    A powder mixture and a green body for producing a silicon nitride-based article of improved fracture toughness and strength. The powder mixture includes 9a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon mitride powder of an average particle size of about 0.2 .mu.m and a surface area of about 8-12m.sup.2 g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 .mu.m and a surface area of about 2-4 m.sup.2 /g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified articel an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. The green body is formed from the powder mixture, an effective amount of a suitable oxide densification aid, and an effective amount of a suitable organic binder.

  18. Theoretical study on interaction of hydrogen with single-walled boron nitride nanotubes. II. Collision, storage, and adsorption

    E-Print Network [OSTI]

    Goddard III, William A.

    of a true hydrogen storage capacity, thus it would be also true that some results of rather high storage storage material or not. Our previous study6 showed that the pristine CNT is not an effective hydrogenTheoretical study on interaction of hydrogen with single-walled boron nitride nanotubes. II

  19. Delta II rocket launching the Mars Exploration Rover,

    E-Print Network [OSTI]

    Torgersen, Christian

    diodes (LEDs), laser diodes, photo detectors, and solar cells. These devices are important of efficient solar cells. Gallium is also used in some unusual applications. Thermal convection in liquidN (gallium nitride), and CIGS (copper-indium-gallium selenide) direct band-gap semiconductors. GaAs and Ga

  20. Observing bulk diamond spin coherence in high-purity nanodiamonds

    E-Print Network [OSTI]

    Helena S. Knowles; Dhiren M. Kara; Mete Atature

    2013-10-03

    Nitrogen-vacancy centres (NVs) in diamond are attractive for research straddling quantum information science and nanoscale magnetometry and thermometry. While ultrapure bulk diamond NVs sustain the longest spin coherence times among optically accessible spins, nanodiamond NVs display persistently poor spin coherence. Here we introduce high-purity nanodiamonds accommodating record-long NV coherence times, >60 us, observed via universal dynamical decoupling. We show that the main contribution to decoherence comes from nearby nitrogen impurities rather than surface states. We protect the NV spin free precession, essential to DC magnetometry, by driving solely these impurities into the motional narrowing regime. This extends the NV free induction decay time from 440 ns, longer than that in type Ib bulk diamond, to 1.27 us, which is comparable to that in type IIa (impurity-free) diamond. These properties allow the simultaneous exploitation of both high sensitivity and nanometre resolution in diamond-based emergent quantum technologies.

  1. Zinc-bromine batteries for bulk energy storage

    SciTech Connect (OSTI)

    Bellows, R.J.; Einstein, H.; Elspass, C.; Grimes, P.; Katner, E.; Malachesky, P.; Newby, K.

    1983-08-01

    The development of a utility bulk energy market has been severely limited by the lack of better energy storage batteries. Lead acid batteries presently dominate the market. However, lead acid batteries suffer various limitations in the area of cost, maintenance, etc. Design projections for zinc-bromine batteries are attractive for bulk energy storage (BES) and electric vehicle (EV) applications in terms of low manufacturing costs and good performance characteristics. Zinc-bromine battery projections compare favorably with both current lead acid batteries and other advanced battery candidates. In recent years, Exxon's zinc-bromine battery program has shown rapid progress in terms of solving system problems and demonstrating both rapid scale-up of the system and competitively low cost manufacturing techniques.

  2. Accelerating cosmological expansion from shear and bulk viscosity

    E-Print Network [OSTI]

    Stefan Floerchinger; Nikolaos Tetradis; Urs Achim Wiedemann

    2015-03-10

    The dissipation of energy from local velocity perturbations in the cosmological fluid affects the time evolution of spatially averaged fluid dynamic fields and the cosmological solution of Einstein's field equations. We show how this backreaction effect depends on shear and bulk viscosity and other material properties of the dark sector, as well as the spectrum of perturbations. If sufficiently large, this effect could account for the acceleration of the cosmological expansion.

  3. RAPID/BulkTransmission/Arizona | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource HistoryPotentialRuralUtilityScalePVGeneration JumpPublic UtilityQuintasNEPARAPID/BulkTransmission/Arizona

  4. RAPID/BulkTransmission/Colorado | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource HistoryPotentialRuralUtilityScalePVGeneration JumpPublicBulkTransmission/Colorado < RAPID‎ |

  5. RAPID/BulkTransmission/Environment | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource HistoryPotentialRuralUtilityScalePVGeneration JumpPublicBulkTransmission/Colorado < RAPID‎

  6. RAPID/BulkTransmission/Environment/Alaska | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource HistoryPotentialRuralUtilityScalePVGeneration JumpPublicBulkTransmission/Colorado <

  7. RAPID/BulkTransmission/Environment/Arizona | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource HistoryPotentialRuralUtilityScalePVGeneration JumpPublicBulkTransmission/Colorado

  8. RAPID/BulkTransmission/Environment/Colorado | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource HistoryPotentialRuralUtilityScalePVGenerationBulkTransmission/Environment/Colorado < RAPID‎ |

  9. RAPID/BulkTransmission/Environment/Federal | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource HistoryPotentialRuralUtilityScalePVGenerationBulkTransmission/Environment/Colorado < RAPID‎

  10. RAPID/BulkTransmission/Environment/Hawaii | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource HistoryPotentialRuralUtilityScalePVGenerationBulkTransmission/Environment/Colorado <

  11. RAPID/BulkTransmission/Environment/Idaho | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource HistoryPotentialRuralUtilityScalePVGenerationBulkTransmission/Environment/Colorado

  12. RAPID/BulkTransmission/Land Use | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsourceBulkTransmission/Environment/Nevada < RAPID‎ |

  13. RAPID/BulkTransmission/Power Plant | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsourceBulkTransmission/Environment/Nevada < RAPID‎

  14. Bulk Hauling Equipment for CHG | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum Based Fuels| Department of EnergyEmergingEnergyBulk Hauling Equipment

  15. EFFECTIVE POROSITY IMPLIES EFFECTIVE BULK DENSITY IN SORBING SOLUTE TRANSPORT

    SciTech Connect (OSTI)

    Flach, G.

    2012-02-27

    The concept of an effective porosity is widely used in solute transport modeling to account for the presence of a fraction of the medium that effectively does not influence solute migration, apart from taking up space. This non-participating volume or ineffective porosity plays the same role as the gas phase in single-phase liquid unsaturated transport: it increases pore velocity, which is useful towards reproducing observed solute travel times. The prevalent use of the effective porosity concept is reflected by its prominent inclusion in popular texts, e.g., de Marsily (1986), Fetter (1988, 1993) and Zheng and Bennett (2002). The purpose of this commentary is to point out that proper application of the concept for sorbing solutes requires more than simply reducing porosity while leaving other material properties unchanged. More specifically, effective porosity implies the corresponding need for an effective bulk density in a conventional single-porosity model. The reason is that the designated non-participating volume is composed of both solid and fluid phases, both of which must be neglected for consistency. Said another way, if solute does not enter the ineffective porosity then it also cannot contact the adjoining solid. Conceptually neglecting the fluid portion of the non-participating volume leads to a lower (effective) porosity. Likewise, discarding the solid portion of the non-participating volume inherently leads to a lower or effective bulk density. In the author's experience, practitioners virtually never adjust bulk density when adopting the effective porosity approach.

  16. Bulk Viscosity and Cavitation in Boost-Invariant Hydrodynamic Expansion

    E-Print Network [OSTI]

    Krishna Rajagopal; Nilesh Tripuraneni

    2010-02-16

    We solve second order relativistic hydrodynamics equations for a boost-invariant 1+1-dimensional expanding fluid with an equation of state taken from lattice calculations of the thermodynamics of strongly coupled quark-gluon plasma. We investigate the dependence of the energy density as a function of proper time on the values of the shear viscosity, the bulk viscosity, and second order coefficients, confirming that large changes in the values of the latter have negligible effects. Varying the shear viscosity between zero and a few times s/(4 pi), with s the entropy density, has significant effects, as expected based on other studies. Introducing a nonzero bulk viscosity also has significant effects. In fact, if the bulk viscosity peaks near the crossover temperature Tc to the degree indicated by recent lattice calculations in QCD without quarks, it can make the fluid cavitate -- falling apart into droplets. It is interesting to see a hydrodynamic calculation predicting its own breakdown, via cavitation, at the temperatures where hadronization is thought to occur in ultrarelativistic heavy ion collisions.

  17. Bulk Viscosity and Cavitation in Boost-Invariant Hydrodynamic Expansion

    E-Print Network [OSTI]

    Rajagopal, Krishna

    2009-01-01

    We solve second order relativistic hydrodynamics equations for a boost-invariant 1+1-dimensional expanding fluid with an equation of state taken from lattice calculations of the thermodynamics of strongly coupled quark-gluon plasma. We investigate the dependence of the energy density as a function of proper time on the values of the shear viscosity, the bulk viscosity, and second order coefficients, confirming that large changes in the values of the latter have negligible effects. Varying the shear viscosity between zero and a few times s/(4 pi), with s the entropy density, has significant effects, as expected based on other studies. Introducing a nonzero bulk viscosity also has significant effects. In fact, if the bulk viscosity peaks near the crossover temperature Tc to the degree indicated by recent lattice calculations in QCD without quarks, it can make the fluid cavitate -- falling apart into droplets. It is interesting to see a hydrodynamic calculation predicting its own breakdown, via cavitation, at th...

  18. Standard practice for bulk sampling of liquid uranium hexafluoride

    E-Print Network [OSTI]

    American Society for Testing and Materials. Philadelphia

    2001-01-01

    1.1 This practice covers methods for withdrawing representative samples of liquid uranium hexafluoride (UF6) from bulk quantities of the material. Such samples are used for determining compliance with the applicable commercial specification, for example Specification C787 and Specification C996. 1.2 It is assumed that the bulk liquid UF6 being sampled comprises a single quality and quantity of material. This practice does not address any special additional arrangements that might be required for taking proportional or composite samples, or when the sampled bulk material is being added to UF6 residues already in a container (“heels recycle”). 1.3 The number of samples to be taken, their nominal sample weight, and their disposition shall be agreed upon between the parties. 1.4 The scope of this practice does not include provisions for preventing criticality incidents. 1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of th...

  19. Dynamics of dendritic polymers in the bulk and under confinement

    SciTech Connect (OSTI)

    Chrissopoulou, K.; Fotiadou, S.; Androulaki, K.; Anastasiadis, S. H.; Tanis, I.; Karatasos, K.; Prevosto, D.; Labardi, M.; Frick, B.

    2014-05-15

    The structure and dynamics of a hyperbranched polyesteramide (Hybrane® S 1200) polymer and its nanocomposites with natural montmorillonite (Na{sup +}-MMT) are investigated by XRD, DSC, QENS, DS and Molecular Dynamics (MD) simulation. In bulk, the energy-resolved elastically scattered intensity from the polymer exhibits two relaxation steps, one attributed to sub-T{sub g} motions and one observed at temperatures above the glass transition, T{sub g}. The QENS spectra measured over the complete temperature range are consistent with the elastic measurements and can be correlated to the results emerging from the detailed description afforded by the atomistic simulations, which predict the existence of three relaxation processes. Moreover, dielectric spectroscopy shows the sub- T{sub g} beta process as well as the segmental relaxation. For the nanocomposites, XRD reveals an intercalated structure for all hybrids with distinct interlayer distances due to polymer chains residing within the galleries of the Na{sup +}-MMT. The polymer chains confined within the galleries show similarities in the behavior with that of the polymer in the bulk for temperatures below the bulk polymer T{sub g}, whereas they exhibit frozen dynamics under confinement at temperatures higher than that.

  20. Measurement of the Solar Neutrino Capture Rate by the Russian-American Gallium Solar Neutrino Experiment During One Half of the 22-Year Cycle of Solar Activity

    E-Print Network [OSTI]

    SAGE Collaboration; J. N. Abdurashitov

    2002-07-09

    We present the results of measurements of the solar neutrino capture rate in gallium metal by the Russian-American Gallium Experiment SAGE during slightly more than half of a 22-year cycle of solar activity. Combined analysis of the data of 92 runs during the 12-year period January 1990 through December 2001 gives a capture rate of solar neutrinos with energy more than 233 keV of 70.8 +5.3/-5.2 (stat.) +3.7/-3.2 (syst.) SNU. This represents only slightly more than half of the predicted standard solar model rate of 128 SNU. We give the results of new runs beginning in April 1998 and the results of combined analysis of all runs since 1990 during yearly, monthly, and bimonthly periods. Using a simple analysis of the SAGE results combined with those from all other solar neutrino experiments, we estimate the electron neutrino pp flux that reaches the Earth to be (4.6 +/- 1.1) E10/(cm^2-s). Assuming that neutrinos oscillate to active flavors the pp neutrino flux emitted in the solar fusion reaction is approximately (7.7 +/- 1.8) E10/(cm^2-s), in agreement with the standard solar model calculation of (5.95 +/- 0.06) E10/(cm^2-s).

  1. FY07 LDRD Final Report Synthesis under High Pressure and Temperature of New Metal Nitrides

    SciTech Connect (OSTI)

    Crowhurst, J C; Sadigh, B; Aberg, D; Zaug, J M; Goncharov, A F

    2008-09-23

    The original aim of this LDRD was to determine with unprecedented precision the melting curve of iron to geophysically relevant pressures. In the course of developing much of the technology and techniques required to obtain this information we have encountered and studied novel chemical reactions some of whose products are stable or metastable under ambient conditions. Specifically we have synthesized nitrides of the platinum group metals including platinum, iridium, and palladium. We have also carried out in depth first principles theoretical investigations into the nature of these materials. We believed that the scientific impact of continuing this work would be greater than that of the original goals of this project. Indeed the work has led to a number of high profile publications with additional publications in preparation. While nitrides of the transition metals are generally of tremendous technological importance, those of the noble metals in particular have enjoyed much experimental and theoretical attention in the very short time since they were first synthesized. The field was and clearly remains open for further study. While the scientific motivation for this research is different from that originally proposed, many of the associated methods in which we have now gained experience are similar or identical. These include use of the diamond anvil cell combined with technologies to generate high temperatures, the in-situ technique of Raman scattering using our purpose-built, state-of-the-art system, analytical techniques for determining the composition of recovered samples such as x-ray photoelectron spectroscopy, and finally synchrotron-based techniques such as x-ray diffraction for structural and equation of state determinations. Close interactions between theorists and experimentalists has and will continue to allow our group to rapidly and reliably interpret complicated results on the structure and dynamics of these compounds and also additional novel materials. Although the purely scientific dividends of this project have been substantial, there remains the possibility of a technological application--now that nitrides with likely desirable properties have been shown to exist, large-scale synthesis techniques can be considered.

  2. Crystalline carbon nitride thin films deposited by microwave plasma chemical vapor deposition This article has been downloaded from IOPscience. Please scroll down to see the full text article.

    E-Print Network [OSTI]

    Gao, Hongjun

    of such a hypothetical ma- terial is also significant to the research in the fields of condensed matter physics compound. II. EXPERIMENTAL The carbon nitride thin films were deposited on polished Si (100) in the MPCVD

  3. Theoretical study of the ammonia nitridation rate on an Fe (100) surface: A combined density functional theory and kinetic Monte Carlo study

    E-Print Network [OSTI]

    Yeo, Sang Chul

    Ammonia (NH[subscript 3]) nitridation on an Fe surface was studied by combining density functional theory (DFT) and kinetic Monte Carlo (kMC) calculations. A DFT calculation was performed to obtain the energy barriers ...

  4. Analysis of Nitrogen Incorporation in Group III-Nitride-Arsenide Materials Using a Magnetic Sector Secondary-Ion Mass Spectrometry (SIMS) Instrument: Preprint

    SciTech Connect (OSTI)

    Reedy, R. C.; Geisz, J. F.; Kurtz, S. R.; Adams, R. O.; Perkins, C. L.

    2001-10-01

    Presented at the 2001 NCPV Program Review Meeting: Group III-nitride-arsenide materials were studied by SIMS, XRD, and Profiler to determine small amounts of nitrogen that can lower the alloys bandgap significantly.

  5. Analysis and forecast of the capesize bulk carriers shipping market using Artificial Neural Networks

    E-Print Network [OSTI]

    Voudris, Athanasios V

    2006-01-01

    Investing in the bulk carrier market constitutes a rather risky investment due to the volatility of the bulk carrier freight rates. In this study it is attempted to uncover the benefits of using Artificial Neural Networks ...

  6. High-Energy, Low-Frequency Risk to the North American Bulk Power...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    High-Energy, Low-Frequency Risk to the North American Bulk Power System (June 2010) High-Energy, Low-Frequency Risk to the North American Bulk Power System (June 2010) A...

  7. Notes 10. A thermohydrodynamic bulk-flow model for fluid film bearings 

    E-Print Network [OSTI]

    San Andres, Luis

    2009-01-01

    The complete set of bulk-flow equations for the analysis of turbulent flow fluid film bearings. Importance of thermal effects in process fluid applications. A CFD method for solution of the bulk-flow equations....

  8. In vitro Corrosion and Haemocompatibility of Bulk Nanocrystalline 304 Stainless Steel by Severe Rolling

    E-Print Network [OSTI]

    Zheng, Yufeng

    In vitro Corrosion and Haemocompatibility of Bulk Nanocrystalline 304 Stainless Steel by Severe; haemocompatibility. Abstract. Bulk nanocrystalline 304 stainless steel (nanocrystalline 304ss) discs had been successfully prepared by the commercial microcrystalline 304 stainless steel (microcrystalline 304ss) plate

  9. The utilization of microwave heating for the fabrication of sintered reaction-bonded silicon nitride

    SciTech Connect (OSTI)

    Kiggans, J.O.; Tiegs, T.N.; Lin, H.T.; Holcombe, C.E.

    1995-12-31

    The results of studies in which microwave heating was used to fabricate sintered reaction-bonded silicon nitride (SRBSN) are reviewed. These results are compared to parallel studies where conventional heating was used for the fabrication of these materials. Microwave fabrication of SRBSN involves a single heating cycle, whereas conventional processing requires two separate furnace runs and sample packaging steps. SRBSN containing high levels of sintering aids which were fabricated by microwave heating showed improved strength and toughness, as compared to those materials fabricated using a conventional resistance-heated furnace. An analysis of the microstructures of the microwave fabricated materials showed enhanced acicular grain growth as compared to conventionally heated material. Results are presented on studies involving the scale-up of the microwave fabrication process.

  10. Electrical properties and electronic structure of Si-implanted hexagonal boron nitride films

    SciTech Connect (OSTI)

    He, B.; Yuen, M. F.; Zhang, W. J., E-mail: apwjzh@cityu.edu.hk [Center of Super-Diamond and Advanced Films (COSDAF), and Department of Physics and Materials Science, City University of Hong Kong (Hong Kong); Qiu, M. [School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114 (China)

    2014-07-07

    Si ion implantation with a set of ion energies and ion doses was carried out to dope hexagonal boron nitride (hBN) thin films synthesized by radio-frequency magnetron sputtering. Hall effect measurements revealed n-type conduction with a low resistivity of 0.5 ? cm at room temperature, corresponding to an electron concentration of 2.0?×?10{sup 19}?cm{sup ?3} and a mobility of 0.6 cm{sup 2}/V s. Temperature-dependent resistivity measurements in a wide temperature range from 50 to 800?K demonstrated two shallow donor levels in the hBN band gap induced by Si doping, which was in consistence with the theoretical calculation by density function theory.

  11. Vacancies in fully hydrogenated boron nitride layer: implications for functional nanodevices

    SciTech Connect (OSTI)

    Zhou, Yungang; Wang, Zhiguo; Nie, JL; Yang, Ping; Sun, Xin; Khaleel, Mohammad A.; Zu, Xiaotao; Gao, Fei

    2012-03-01

    Using density functional theory, a series of calculations of structural and electronic properties of hydrogen vacancies in a fully hydrogenated boron nitride (fH-BN) layer were conducted. By dehydrogenating the fH-BN structure, B-terminated vacancies can be created which induce complete spin polarization around the Fermi level, irrespective of the vacancy size. On the contrary, the fH-BN structure with N-terminated vacancies can be a small-gap semiconductor, a typical spin gapless semiconductor, or a metal depending on the vacancy size. Utilizing such vacancy-induced band gap and magnetism changes, possible applications in spintronics are proposed, and a special fH-BN based quantum dot device is designed.

  12. Contact-induced spin polarization of monolayer hexagonal boron nitride on Ni(111)

    SciTech Connect (OSTI)

    Ohtomo, Manabu; Entani, Shiro; Matsumoto, Yoshihiro; Naramoto, Hiroshi; Sakai, Seiji; Yamauchi, Yasushi; Kuzubov, Alex A.; Eliseeva, Natalya S.; Avramov, Pavel V.

    2014-02-03

    Hexagonal boron nitride (h-BN) is a promising barrier material for graphene spintronics. In this Letter, spin-polarized metastable de-excitation spectroscopy (SPMDS) is employed to study the spin-dependent electronic structure of monolayer h-BN/Ni(111). The extreme surface sensitivity of SPMDS enables us to elucidate a partial filling of the in-gap states of h-BN without any superposition of Ni 3d signals. The in-gap states are shown to have a considerable spin polarization parallel to the majority spin of Ni. The positive spin polarization is attributed to the ?-d hybridization and the effective spin transfer to the nitrogen atoms at the h-BN/Ni(111) interface.

  13. Novel Electronic and Magnetic Properties of Graphene Nanoflakes in a Boron Nitride Layer

    SciTech Connect (OSTI)

    Zhou, Yungang; Wang, Zhiguo; Yang, Ping; Gao, Fei

    2012-04-05

    Novel electronic and magnetic properties of various-sized graphene nanoflakes (GNFs) embedded in a boron nitride (BN) layer are studied using ab initio methods. The feasibility of synthesizing hybrid GNF-BN structure, a desirable quantum dot structure, is explored. In this structure, photoexcited electrons and holes occupy the same spatial region - the GNF region - which offers an effective way to generate a GNF-based light-emitting device and adjust its emitted optical properties by controlling the size and array of GNF in the BN layer. Based on the important magnetism properties of embedded GNF, we propose a specific configuration to obtain a large spin. Together with the high stability of spin alignment, the proposed configuration can be exploited for spintronic devices.

  14. Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures

    SciTech Connect (OSTI)

    Kamalakar, M. Venkata Dankert, André; Bergsten, Johan; Ive, Tommy; Dash, Saroj P.

    2014-11-24

    Hexagonal boron nitride (h-BN) is a large bandgap insulating isomorph of graphene, ideal for atomically thin tunnel barrier applications. In this letter, we demonstrate large area chemical vapor deposited (CVD) h-BN as a promising spin tunnel barrier in graphene spin transport devices. In such structures, the ferromagnetic tunnel contacts with h-BN barrier are found to show robust tunneling characteristics over a large scale with resistances in the favorable range for efficient spin injection into graphene. The non-local spin transport and precession experiments reveal spin lifetime ?500 ps and spin diffusion length ?1.6??m in graphene with tunnel spin polarization ?11% at 100?K. The electrical and spin transport measurements at different injection bias current and gate voltages confirm tunnel spin injection through h-BN barrier. These results open up possibilities for implementation of large area CVD h-BN in spintronic technologies.

  15. Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors

    SciTech Connect (OSTI)

    Lyons, J. L.; Janotti, A.; Van de Walle, C. G. [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2014-01-07

    We examine how hole localization limits the effectiveness of substitutional acceptors in oxide and nitride semiconductors and explain why p-type doping of these materials has proven so difficult. Using hybrid density functional calculations, we find that anion-site substitutional impurities in AlN, GaN, InN, and ZnO lead to atomic-like states that localize on the impurity atom itself. Substitution with cation-site impurities, on the other hand, triggers the formation of polarons that become trapped on nearest-neighbor anions, generally leading to large ionization energies for these acceptors. Unlike shallow effective-mass acceptors, these two types of deep acceptors couple strongly with the lattice, significantly affecting the optical properties and severely limiting prospects for achieving p-type conductivity in these wide-band-gap materials.

  16. A compact and reconfigurable silicon nitride time-bin entanglement circuit

    E-Print Network [OSTI]

    C. Xiong; X. Zhang; A. Mahendra; J. He; D. -Y. Choi; C. J. Chae; D. Marpaung; A. Leinse; R. G. Heideman; M. Hoekman; C. G. H. Roeloffzen; R. M. Oldenbeuving; P. W. L. van Dijk; C. Taddei; P. H. W. Leong; B. J. Eggleton

    2015-06-09

    Photonic chip based time-bin entanglement has attracted significant attention because of its potential for quantum communication and computation. Useful time-bin entanglement systems must be able to generate, manipulate and analyze entangled photons on a photonic chip for stable, scalable and reconfigurable operation. Here we report the first time-bin entanglement photonic chip that integrates time-bin generation, wavelength demultiplexing and entanglement analysis. A two-photon interference fringe with an 88.4% visibility is measured (without subtracting any noise), indicating the high performance of the chip. Our approach, based on a silicon nitride photonic circuit, which combines the low-loss characteristic of silica and tight integration features of silicon, paves the way for scalable real-world quantum information processors.

  17. The synthesis and structure of new transition metal lithium calcium nitride compounds

    SciTech Connect (OSTI)

    Hunting, Janet L.; Szymanski, Marta M.; Kowalsick, Amanda L.; Downie, Craig M.; DiSalvo, Francis J.

    2013-01-15

    Three new nitrides, Li{sub 3}Ca{sub 2}V{sub 0.79}Nb{sub 0.21}N{sub 4}, Li{sub 2}Ca{sub 2.67}Nb{sub 0.33}N{sub 3} and Li{sub 12}Ca{sub 9}W{sub 5}N{sub 20}, were synthesized in sealed niobium tubes using lithium nitride as a flux at temperatures ranging from 800 Degree-Sign C to 1050 Degree-Sign C. In all of these compounds, the transition metals are coordinated tetrahedrally by nitrogen; these tetrahedra are isolated from each other. Bullet Li{sub 3}Ca{sub 2}V{sub 0.79}Nb{sub 0.21}N{sub 4}, space group P2{sub 1}/m (no. 11), cell parameters a=5.7669(8) A, b=6.9123(9) A, c=6.0116(12) A, {beta}=90.727(9) Degree-Sign , Z=2, has a shared vanadium/niobium tetrahedral position which shares vertices with the tetrahedrally-coordinated lithium position. Bullet Li{sub 2}Ca{sub 2.67}Nb{sub 0.33}N{sub 3}, space group Req /o(3, Macron )m (no. 166), cell parameters a=3.6311(2) A, c=29.459(3) A, Z=3, contains a disordered tetrahedral calcium/niobium position, an octahedral calcium position and a triangularly coordinated lithium position. Bullet Li{sub 12}Ca{sub 9}W{sub 5}N{sub 20}, space group C2/c (no. 15), cell parameters a=27.7347(19) A, b=8.6652(6) A, c=10.7685(7) A, {beta}=110.314(2) Degree-Sign , Z=4, contains three crystallographically different tungsten positions as well as one disordered lithium position. - Graphical abstract: Crystal structure of Li{sub 3}Ca{sub 2}V{sub 0.79}Nb{sub 0.21}N{sub 4} depicting the chains of edge-sharing LiN{sub 4} (light hatching) and (V/Nb)N{sub 4} (dark hatching) tetrahedra viewed approximately along the [100] direction. Calcium atoms are shown as open circles and nitrogen atoms are colored black. Highlights: Black-Right-Pointing-Pointer Three new lithium calcium nitrides are synthesized. Black-Right-Pointing-Pointer Lithium nitride flux used in synthesis. Black-Right-Pointing-Pointer Structures contain isolated tetrahedrally coordinated transition metals. Black-Right-Pointing-Pointer Li{sub 12}Ca{sub 9}W{sub 5}N{sub 20} contains three crystallographically different W positions.

  18. Thermal interface conductance across a graphene/hexagonal boron nitride heterojunction

    SciTech Connect (OSTI)

    Chen, Chun-Chung; Li, Zhen; Cronin, Stephen B. [Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089 (United States); Shi, Li [Department of Mechanical Engineering and Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States)

    2014-02-24

    We measure thermal transport across a graphene/hexagonal boron nitride (h-BN) interface by electrically heating the graphene and measuring the temperature difference between the graphene and BN using Raman spectroscopy. Because the temperature of the graphene and BN are measured optically, this approach enables nanometer resolution in the cross-plane direction. A temperature drop of 60?K can be achieved across this junction at high electrical powers (14 mW). Based on the temperature difference and the applied power data, we determine the thermal interface conductance of this junction to be 7.4?×?10{sup 6}?Wm{sup ?2}K{sup ?1}, which is below the 10{sup 7}–10{sup 8}?Wm{sup ?2}K{sup ?1} values previously reported for graphene/SiO{sub 2} interface.

  19. Graphene on boron-nitride: Moiré pattern in the van der Waals energy

    SciTech Connect (OSTI)

    Neek-Amal, M. [Department of Physics, University of Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen (Belgium); Department of Physics, Shahid Rajaee University, Lavizan, Tehran 16788 (Iran, Islamic Republic of); Peeters, F. M. [Department of Physics, University of Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen (Belgium)

    2014-01-27

    The spatial dependence of the van der Waals (vdW) energy between graphene and hexagonal boron-nitride (h-BN) is investigated using atomistic simulations. The van der Waals energy between graphene and h-BN shows a hexagonal superlattice structure identical to the observed Moiré pattern in the local density of states, which depends on the lattice mismatch and misorientation angle between graphene and h-BN. Our results provide atomistic features of the weak van der Waals interaction between graphene and BN which are in agreement with experiment and provide an analytical expression for the size of the spatial variation of the weak van der Waals interaction. We also found that the A-B-lattice symmetry of graphene is broken along the armchair direction.

  20. A cohesive law for interfaces in graphene/hexagonal boron nitride heterostructure

    SciTech Connect (OSTI)

    Zhang, Chenxi [Department of Mechanical and Aerospace Engineering, University of Miami, Coral Gables, Florida 33146 (United States); Lou, Jun [Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77251 (United States); Song, Jizhou, E-mail: jzsong@gmail.com [Department of Engineering Mechanics and Soft Matter Research Center, Zhejiang University, Hangzhou 310027 (China)

    2014-04-14

    Graphene/hexagonal boron nitride (h-BN) heterostructure has showed great potential to improve the performance of graphene device. We have established the cohesive law for interfaces between graphene and monolayer or multi-layer h-BN based on the van der Waals force. The cohesive energy and cohesive strength are given in terms of area density of atoms on corresponding layers, number of layers, and parameters in the van der Waals force. It is found that the cohesive law in the graphene/multi-layer h-BN is dominated by the three h-BN layers which are closest to the graphene. The approximate solution is also obtained to simplify the expression of cohesive law. These results are very useful to study the deformation of graphene/h-BN heterostructure, which may have significant impacts on the performance and reliability of the graphene devices especially in the areas of emerging applications such as stretchable electronics.

  1. Polarization doping and the efficiency of III-nitride optoelectronic devices

    SciTech Connect (OSTI)

    Kivisaari, Pyry; Oksanen, Jani; Tulkki, Jukka [Department of Biomedical Engineering and Computational Science, Aalto University, P.O. Box 12200, FI-00076 Aalto (Finland)] [Department of Biomedical Engineering and Computational Science, Aalto University, P.O. Box 12200, FI-00076 Aalto (Finland)

    2013-11-18

    The intrinsic polarization is generally considered a nuisance in III-nitride devices, but recent studies have shown that it can be used to enhance p- and n-type conductivity and even to replace impurity doping. We show by numerical simulations that polarization-doped light-emitting diode (LED) structures have a significant performance advantage over conventional impurity-doped LED structures. Our results indicate that polarization doping decreases electric fields inside the active region and potential barriers in the depletion region, as well as the magnitude of the quantum-confined Stark effect. The simulations also predict at least an order of magnitude increase in the current density corresponding to the maximum efficiency (i.e., smaller droop) as compared to impurity-doped structures. The obtained high doping concentrations could also enable, e.g., fabrication of III-N resonant tunneling diodes and improved ohmic contacts.

  2. Dilute Group III-V nitride intermediate band solar cells with contact blocking layers

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw (Kensington, CA); Yu, Kin Man (Lafayette, CA)

    2012-07-31

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  3. Dilute group III-V nitride intermediate band solar cells with contact blocking layers

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw; Yu, Kin Man

    2015-02-24

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  4. Pt monolayer shell on nitrided alloy core — A path to highly stable oxygen reduction catalyst

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hu, Jue; Kuttiyiel, Kurian A.; Sasaki, Kotaro; Su, Dong; Yang, Tae -Hyun; Park, Gu -Gon; Zhang, Chengxu; Chen, Guangyu; Adzic, Radoslav R.

    2015-07-22

    The inadequate activity and stability of Pt as a cathode catalyst under the severe operation conditions are the critical problems facing the application of the proton exchange membrane fuel cell (PEMFC). Here we report on a novel route to synthesize highly active and stable oxygen reduction catalysts by depositing Pt monolayer on a nitrided alloy core. The prepared PtMLPdNiN/C catalyst retains 89% of the initial electrochemical surface area after 50,000 cycles between potentials 0.6 and 1.0 V. By correlating electron energy-loss spectroscopy and X-ray absorption spectroscopy analyses with electrochemical measurements, we found that the significant improvement of stability of themore »PtMLPdNiN/C catalyst is caused by nitrogen doping while reducing the total precious metal loading.« less

  5. Vertical coupling of laser glass microspheres to buried silicon nitride ellipses and waveguides

    E-Print Network [OSTI]

    Navarro-Urrios, Daniel; Capuj, Nestor E; Berencen, Yonder; Garrido, Blas; Tredicucci, Alessandro

    2015-01-01

    We demonstrate the integration of Nd3+ doped Barium-Titanium-Silicate microsphere lasers with a Silicon Nitride photonic platform. Devices with two different geometrical configurations for extracting the laser light to buried waveguides have been fabricated and characterized. The first configuration relies on a standard coupling scheme, where the microspheres are placed over strip waveguides. The second is based on a buried elliptical geometry whose working principle is that of an elliptical mirror. In the latter case, the input of a strip waveguide is placed on one focus of the ellipse, while a lasing microsphere is placed on top of the other focus. The fabricated elliptical geometry (ellipticity=0.9) presents a light collecting capacity that is 50% greater than that of the standard waveguide coupling configuration and could be further improved by increasing the ellipticity. Moreover, since the dimensions of the spheres are much smaller than those of the ellipses, surface planarization is not required. On th...

  6. Effective Third-Order Nonlinearities in Metallic Refractory Titanium Nitride Thin Films

    E-Print Network [OSTI]

    Kinsey, Nathaniel; Courtwright, Devon; DeVault, Clayton; Bonner, Carl E; Gavrilenko, Vladimir I; Shalaev, Vladimir M; Hagan, David J; Van Stryland, Eric W; Boltasseva, Alexandra

    2015-01-01

    Nanophotonic devices offer an unprecedented ability to concentrate light into small volumes which can greatly increase nonlinear effects. However, traditional plasmonic materials suffer from low damage thresholds and are not compatible with standard semiconductor technology. Here we study the nonlinear optical properties in the novel refractory plasmonic material titanium nitride using the Z scan method at 1550 nm and 780 nm. We compare the extracted nonlinear parameters for TiN with previous works on noble metals and note a similarly large nonlinear optical response. However, TiN films have been shown to exhibit a damage threshold up to an order of magnitude higher than gold films of a similar thickness, while also being robust, cost-efficient, bio- and CMOS compatible. Together, these properties make TiN a promising material for metal-based nonlinear optics.

  7. Effects of Edge Oxidation on the Structural, Electronic, and Magnetic Properties of Zigzag Boron Nitride Nanoribbons

    E-Print Network [OSTI]

    Krepel, Dana

    2013-01-01

    The effects of edge chemistry on the relative stability and electronic properties of zigzag boron nitride nanoribbons (ZBNNRs) are investigated. Among all functional groups considered, fully hydroxylated ZBNNRs are found to be the most energetically stable. When an in-plane external electric field is applied perpendicular to the axis of both hydrogenated and hydroxylated ZBNNRs, a spin-polarized half-metallic state is induced, whose character is different than that predicted for ZGNRs. The onset field for achieving the half-metallic state is found to mainly depend on the width of the ribbon. Our results indicate that edge functionalization of ZBNNRs may open the way for the design of new nano-electronic and nano-spintronic devices.

  8. Silicon nitride swirl lower-chamber for high power turbocharged diesel engines

    SciTech Connect (OSTI)

    Kamiya, S.; Murachi, M.; Kawamoto, H.; Kato, S.; Kawakami, S.; Suzuki, Y.

    1985-01-01

    This paper describes application of sintered silicon nitride to the swirl lower-chamber in order to improve performance of turbocharged diesel engines. Various stress analyses by finite element method and stress measurements have been applied to determine the design specifications for the component, which compromise brittleness of ceramic materials. Material development was conducted to evaluate strength, fracture toughness, and thermal properties for the sintered bodies. Ceramic injection molding has been employed to fabricate components with large quantities. In the present work. Quality assurance for the components can be made by reliability evaluation methods as well as non-destructive and stress loading inspections. It is found that the engine performance with ceramic component has been increased in the power out put of 9ps as compared to that of conventional engines.

  9. Steel bonded dense silicon nitride compositions and method for their fabrication

    DOE Patents [OSTI]

    Landingham, Richard L. (Livermore, CA); Shell, Thomas E. (Tracy, CA)

    1987-01-01

    A two-stage bonding technique for bonding high density silicon nitride and other ceramic materials to stainless steel and other hard metals, and multilayered ceramic-metal composites prepared by the technique are disclosed. The technique involves initially slurry coating a surface of the ceramic material at about 1500.degree. C. in a vacuum with a refractory material and the stainless steel is then pressure bonded to the metallic coated surface by brazing it with nickel-copper-silver or nickel-copper-manganese alloys at a temperature in the range of about 850.degree. to 950.degree. C. in a vacuum. The two-stage bonding technique minimizes the temperature-expansion mismatch between the dissimilar materials.

  10. Transient fission-gas behavior in uranium nitride fuel under proposed space applications. Doctoral thesis

    SciTech Connect (OSTI)

    Deforest, D.L.

    1991-12-01

    In order to investigate whether fission gas swelling and release would be significant factors in a space based nuclear reactor operating under the Strategic Defense Initiative (SDI) program, the finite element program REDSTONE (Routine For Evaluating Dynamic Swelling in Transient Operational Nuclear Environments) was developed to model the 1-D, spherical geometry diffusion equations describing transient fission gas behavior in a single uranium nitride fuel grain. The equations characterized individual bubbles, rather than bubble groupings. This limits calculations to those scenarios where low temperatures, low burnups, or both were present. Instabilities in the bubble radii calculations forced the implementation of additional constraints limiting the bubble sizes to minimum and maximum (equilibrium) radii. The validity of REDSTONE calculations were checked against analytical solutions for internal consistency and against experimental studies for agreement with swelling and release results.

  11. The cost of silicon nitride powder: What must it be to compete?

    SciTech Connect (OSTI)

    Das, S.; Curlee, T.R.

    1992-02-01

    The ability of advanced ceramic components to compete with similar metallic parts will depend in part on current and future efforts to reduce the cost of ceramic parts. This paper examines the potential reductions in part cost that could result from the development of less expensive advanced ceramic powders. The analysis focuses specifically on two silicon nitride engine components -- roller followers and turbocharger rotors. The results of the process-cost models developed for this work suggest that reductions in the cost of advanced silicon nitride powder from its current level of about $20 per pound to about $5 per pound will not in itself be sufficient to lower the cost of ceramic parts below the current cost of similar metallic components. This work also examines if combinations of lower-cost powders and further improvements in other key technical parameters to which costs are most sensitive could push the cost of ceramics below the cost of metallics. Although these sensitivity analyses are reflective of technical improvements that are very optimistic, the resulting part costs are estimated to remain higher than similar metallic parts. Our findings call into question the widely-held notion that the cost of ceramic components must not exceed the cost of similar metallic parts if ceramics are to be competitive. Economic viability will ultimately be decided not on the basis of which part is less costly, but on an assessment of the marginal costs and benefits provided by ceramics and metallics. This analysis does not consider the benefits side of the equation. Our findings on the cost side of the equation suggest that the competitiveness of advanced ceramics will ultimately be decided by our ability to evaluate and communicate the higher benefits that advanced ceramic parts may offer.

  12. The cost of silicon nitride powder: What must it be to compete

    SciTech Connect (OSTI)

    Das, S.; Curlee, T.R.

    1992-02-01

    The ability of advanced ceramic components to compete with similar metallic parts will depend in part on current and future efforts to reduce the cost of ceramic parts. This paper examines the potential reductions in part cost that could result from the development of less expensive advanced ceramic powders. The analysis focuses specifically on two silicon nitride engine components -- roller followers and turbocharger rotors. The results of the process-cost models developed for this work suggest that reductions in the cost of advanced silicon nitride powder from its current level of about $20 per pound to about $5 per pound will not in itself be sufficient to lower the cost of ceramic parts below the current cost of similar metallic components. This work also examines if combinations of lower-cost powders and further improvements in other key technical parameters to which costs are most sensitive could push the cost of ceramics below the cost of metallics. Although these sensitivity analyses are reflective of technical improvements that are very optimistic, the resulting part costs are estimated to remain higher than similar metallic parts. Our findings call into question the widely-held notion that the cost of ceramic components must not exceed the cost of similar metallic parts if ceramics are to be competitive. Economic viability will ultimately be decided not on the basis of which part is less costly, but on an assessment of the marginal costs and benefits provided by ceramics and metallics. This analysis does not consider the benefits side of the equation. Our findings on the cost side of the equation suggest that the competitiveness of advanced ceramics will ultimately be decided by our ability to evaluate and communicate the higher benefits that advanced ceramic parts may offer.

  13. Low-temperature CVD of iron, cobalt, and nickel nitride thin films from bis[di(tert-butyl)amido]metal(II) precursors and ammonia

    SciTech Connect (OSTI)

    Cloud, Andrew N.; Abelson, John R., E-mail: abelson@illinois.edu [Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 201 Materials Science and Engineering Building, 1304 W. Green St., Urbana, Illinois 61801 (United States); Davis, Luke M.; Girolami, Gregory S., E-mail: girolami@scs.illinois.edu [School of Chemical Sciences, University of Illinois at Urbana-Champaign, 600 S. Mathews Ave., Urbana, Illinois 61801 (United States)

    2014-03-15

    Thin films of late transition metal nitrides (where the metal is iron, cobalt, or nickel) are grown by low-pressure metalorganic chemical vapor deposition from bis[di(tert-butyl)amido]metal(II) precursors and ammonia. These metal nitrides are known to have useful mechanical and magnetic properties, but there are few thin film growth techniques to produce them based on a single precursor family. The authors report the deposition of metal nitride thin films below 300?°C from three recently synthesized M[N(t-Bu){sub 2}]{sub 2} precursors, where M?=?Fe, Co, and Ni, with growth onset as low as room temperature. Metal-rich phases are obtained with constant nitrogen content from growth onset to 200?°C over a range of feedstock partial pressures. Carbon contamination in the films is minimal for iron and cobalt nitride, but similar to the nitrogen concentration for nickel nitride. X-ray photoelectron spectroscopy indicates that the incorporated nitrogen is present as metal nitride, even for films grown at the reaction onset temperature. Deposition rates of up to 18?nm/min are observed. The film morphologies, growth rates, and compositions are consistent with a gas-phase transamination reaction that produces precursor species with high sticking coefficients and low surface mobilities.

  14. Risk-based Maintenance Allocation and Scheduling for Bulk Electric Power Transmission System Equipment

    E-Print Network [OSTI]

    risk of wide-area bulk transmission system failures. The work makes use of two previously developed1 Risk-based Maintenance Allocation and Scheduling for Bulk Electric Power Transmission System for bulk transmission equipment that is based on the cumulative long-term risk caused by each piece

  15. Strontium Titanate DC Electric Field Switchable and Tunable Bulk Acoustic Wave Solidly Mounted Resonator

    E-Print Network [OSTI]

    York, Robert A.

    Strontium Titanate DC Electric Field Switchable and Tunable Bulk Acoustic Wave Solidly Mounted.3 0/0. Index Terms - Acoustic resonators, bulk acoustic wave devices, delay filters, ferroelectric,4] that can be exploited to realize voltage-switchable bulk-acoustic wave (BAW) devices for RF applications [5

  16. dc electric field tunable bulk acoustic wave solidly mounted resonator using SrTiO3

    E-Print Network [OSTI]

    York, Robert A.

    dc electric field tunable bulk acoustic wave solidly mounted resonator using SrTiO3 G. N. SaddikTiO3 solidly mounted bulk acoustic wave resonator has been designed, fabricated, and tested of Physics. DOI: 10.1063/1.2759464 Thin film bulk acoustic wave resonators FBARs have been in use by research

  17. Automatic Bulk Weighing Systems EPO ABWS (Rev. 08/14) DRAFT Page 1

    E-Print Network [OSTI]

    A Description of Test Methods The Automatic Bulk Weighing Systems (ABWS) code of NIST Handbook 44 requires/14) DRAFT Page 2 Proper selection of the best method to use for testing is dependent upon the amount of test bulk material entirely or a combination of bulk material and trim weights.1 Thus, the determination

  18. Automatic Bulk Weighing Systems EPO ABWS (Rev. 08/14) DRAFT Page 1

    E-Print Network [OSTI]

    Automatic Bulk Weighing Systems EPO ABWS (Rev. 08/14) DRAFT Page 1 EPO No. 16 Appendix B amount of scale error (high level steps 2 and 3) #12;Automatic Bulk Weighing Systems EPO ABWS (Rev. 08 step 1: Error = - 3 #12;Automatic Bulk Weighing Systems EPO ABWS (Rev. 08/14) DRAFT Page 3 Evaluating

  19. Automatic Bulk Weighing Systems EPO ABWS (Rev. 08/14) DRAFT Page 1

    E-Print Network [OSTI]

    Automatic Bulk Weighing Systems EPO ABWS (Rev. 08/14) DRAFT Page 1 EPO No. 16 Appendix B of the scale; then remove the error weights. #12;Automatic Bulk Weighing Systems EPO ABWS (Rev. 08/14) DRAFT consecutive digital increments not permitted to be greater than 0.3 d Lower Increment #12;Automatic Bulk

  20. Bulk elastic fingering instability in Hele-Shaw cells

    E-Print Network [OSTI]

    Baudouin Saintyves; Olivier Dauchot; Elisabeth Bouchaud

    2013-08-17

    We demonstrate experimentally the existence of a purely elastic fingering instability which arises when air penetrates into an elastomer confined in a Hele-Shaw cell. Fingers appear sequentially and propagate within the bulk of the material as soon as a critical strain, independent of the elastic modulus, is exceeded. Their width depends non-linearly on the distance between the confining glass plates. A key element in the driving force of the instability is the adhesion of layers of gels to the plates, which results in a considerable expense of elastic energy during the growth of the air bubble.