National Library of Energy BETA

Sample records for bond comm ga

  1. Fitzgerald Wtr Lgt & Bond Comm | Open Energy Information

    Open Energy Info (EERE)

    Fitzgerald Wtr Lgt & Bond Comm Jump to: navigation, search Name: Fitzgerald Wtr Lgt & Bond Comm Place: Georgia Phone Number: (229) 426-5400 Website: fitzutilities.com Outage...

  2. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  3. Rigid-body translation and bonding across l brace 110 r brace antiphase boundaries in GaAs

    SciTech Connect (OSTI)

    Rasmussen, D.R.; McKernan, S.; Carter, C.B. )

    1991-05-20

    A transmission-electron-microscope strong-beam technique is used to investigate the rigid-body translation across {l brace}110{r brace} antiphase boundaries in GaAs. The results show a translation in the {l angle}001{r angle} direction parallel to the plane of the boundary. The magnitude of the translation is determined, and the antisite bond lengths are discussed in terms of the tetrahedral radii of Ga and As. Given this knowledge of the rigid-body translation, the absolute polarity of a GaAs grain can be determined immediately from a bright-field image of the {l brace}110{r brace} antiphase boundary.

  4. Greenville Utilities Comm | Open Energy Information

    Open Energy Info (EERE)

    Greenville Utilities Comm Jump to: navigation, search Name: Greenville Utilities Comm Place: North Carolina Phone Number: 1-855-767-2482 Website: www.guc.com Twitter: @gucinfo...

  5. Truman Public Utilities Comm | Open Energy Information

    Open Energy Info (EERE)

    Truman Public Utilities Comm Jump to: navigation, search Name: Truman Public Utilities Comm Place: Minnesota Phone Number: 507-776-7951 Website: trumanmn.usutilities Outage...

  6. Hibbing Public Utilities Comm | Open Energy Information

    Open Energy Info (EERE)

    Hibbing Public Utilities Comm Jump to: navigation, search Name: Hibbing Public Utilities Comm Place: Minnesota Website: www.hpuc.com Outage Hotline: 218-262-7720 References: EIA...

  7. Fairmont Public Utilities Comm | Open Energy Information

    Open Energy Info (EERE)

    Fairmont Public Utilities Comm Jump to: navigation, search Name: Fairmont Public Utilities Comm Place: Minnesota Phone Number: 507-235-6918 Website: fairmont.orgpublic-utilities...

  8. Greenwood Utilities Comm | Open Energy Information

    Open Energy Info (EERE)

    Greenwood Utilities Comm Jump to: navigation, search Name: Greenwood Utilities Comm Place: Mississippi Phone Number: (622) 453-7234 Website: www.greenwoodutilities.com Facebook:...

  9. Shakopee Public Utilities Comm | Open Energy Information

    Open Energy Info (EERE)

    Shakopee Public Utilities Comm Jump to: navigation, search Name: Shakopee Public Utilities Comm Place: Minnesota Website: spucweb.com Outage Hotline: 952-445-1988 References: EIA...

  10. Corbin City Utilities Comm | Open Energy Information

    Open Energy Info (EERE)

    Corbin City Utilities Comm Jump to: navigation, search Name: Corbin City Utilities Comm Place: Kentucky Phone Number: 606-528-4026 Website: corbinutilities.com Outage Hotline:...

  11. Aitkin Public Utilities Comm | Open Energy Information

    Open Energy Info (EERE)

    Aitkin Public Utilities Comm Jump to: navigation, search Name: Aitkin Public Utilities Comm Place: Minnesota Phone Number: 763-576-2750 Website: www.anokaelectric.govoffice3.c...

  12. Preston Public Utilities Comm | Open Energy Information

    Open Energy Info (EERE)

    Preston Public Utilities Comm Jump to: navigation, search Name: Preston Public Utilities Comm Place: Minnesota Phone Number: (507) 765-2491 Website: www.prestonmn.orgpuc1.htm...

  13. Waterloo Light & Water Comm | Open Energy Information

    Open Energy Info (EERE)

    Water Comm Jump to: navigation, search Name: Waterloo Light & Water Comm Place: Wisconsin Phone Number: (920) 478-2260 Website: waterlooutilities.com Facebook: https:...

  14. Cedarburg Light & Water Comm | Open Energy Information

    Open Energy Info (EERE)

    Cedarburg Light & Water Comm Jump to: navigation, search Name: Cedarburg Light & Water Comm Place: Wisconsin Phone Number: (262) 375-7650 Website: www.cedarburglightandwater.com...

  15. Paragould Light & Water Comm | Open Energy Information

    Open Energy Info (EERE)

    Paragould Light & Water Comm Jump to: navigation, search Name: Paragould Light & Water Comm Place: Arkansas Phone Number: (870) 239-7700 Website: www.paragould.com Facebook:...

  16. Brodhead Water & Lighting Comm | Open Energy Information

    Open Energy Info (EERE)

    Brodhead Water & Lighting Comm Jump to: navigation, search Name: Brodhead Water & Lighting Comm Place: Wisconsin Phone Number: 608-897-2505 Website: www.cityofbrodheadwi.usdepart...

  17. Glencoe Light & Power Comm | Open Energy Information

    Open Energy Info (EERE)

    Glencoe Light & Power Comm Jump to: navigation, search Name: Glencoe Light & Power Comm Place: Minnesota Website: glencoelightandpower.com Outage Hotline: 320-864-5184 References:...

  18. Hawley Public Utilities Comm | Open Energy Information

    Open Energy Info (EERE)

    Hawley Public Utilities Comm Jump to: navigation, search Name: Hawley Public Utilities Comm Place: Minnesota Phone Number: 218-483-3331 or 701-361-8219 or 701-361-4803 Website:...

  19. Adrian Public Utilities Comm | Open Energy Information

    Open Energy Info (EERE)

    Adrian Public Utilities Comm Jump to: navigation, search Name: Adrian Public Utilities Comm Address: 20 Maine Ave Place: Adrian, MN Zip: 56110 Phone Number: 507-483-2680 Website:...

  20. Orlando Utilities Comm | Open Energy Information

    Open Energy Info (EERE)

    Orlando Utilities Comm Jump to: navigation, search Name: Orlando Utilities Comm Place: Florida Phone Number: 407.423.9018 or 407.957.7373 Website: www.ouc.com Twitter: https:...

  1. Barbourville Utility Comm | Open Energy Information

    Open Energy Info (EERE)

    Comm Place: Kentucky Phone Number: 1 (606) 546-3187 Website: www.barbourville.comindex-4.h Facebook: https:www.facebook.compagesBarbourville-Utility-Commission185033288196247...

  2. Reedsburg Utility Comm | Open Energy Information

    Open Energy Info (EERE)

    Comm Place: Wisconsin Phone Number: (608) 524-4381 Website: reedsburgutility.com Facebook: https:www.facebook.compagesReedsburg-Utility-Commission136628653195868 Outage...

  3. Wyandotte Municipal Serv Comm | Open Energy Information

    Open Energy Info (EERE)

    Municipal Serv Comm Place: Michigan Phone Number: 734.324.7190 Website: www.wyan.org Twitter: @wyandottemunsvs Facebook: https:www.facebook.comwyandottemunicipalservices...

  4. Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors

    SciTech Connect (OSTI)

    Kim, SangHyeon E-mail: sh-kim@kist.re.kr; Ikku, Yuki; Takenaka, Mitsuru; Takagi, Shinichi; Yokoyama, Masafumi; Nakane, Ryosho; Li, Jian; Kao, Yung-Chung

    2014-07-28

    Heterogeneous integration of III-V devices on Si wafers have been explored for realizing high device performance as well as merging electrical and photonic applications on the Si platform. Existing methodologies have unavoidable drawbacks such as inferior device quality or high cost in comparison with the current Si-based technology. In this paper, we present InGaAs-on-insulator (-OI) fabrication from an InGaAs layer grown on a Si donor wafer with a III-V buffer layer instead of growth on a InP donor wafer. This technology allows us to yield large wafer size scalability of III-V-OI layers up to the Si wafer size of 300?mm with a high film quality and low cost. The high film quality has been confirmed by Raman and photoluminescence spectra. In addition, the fabricated InGaAs-OI transistors exhibit the high electron mobility of 1700?cm{sup 2}/V s and uniform distribution of the leakage current, indicating high layer quality with low defect density.

  5. New Castle Municipal Serv Comm | Open Energy Information

    Open Energy Info (EERE)

    Municipal Serv Comm Jump to: navigation, search Name: New Castle Municipal Serv Comm Place: Delaware Phone Number: 302-323-2333 Website: www.newcastlemsc.comindex.php Outage...

  6. Sun Prairie Water & Light Comm | Open Energy Information

    Open Energy Info (EERE)

    Water & Light Comm Jump to: navigation, search Name: Sun Prairie Water & Light Comm Place: Wisconsin Phone Number: 608.837.5500 Website: www.sunprairieutilities.com Twitter:...

  7. Oconto Falls Water & Light Comm | Open Energy Information

    Open Energy Info (EERE)

    Oconto Falls Water & Light Comm Jump to: navigation, search Name: Oconto Falls Water & Light Comm Place: Wisconsin Phone Number: (920) 846-4507 Website: ofmu.orgaboutus Outage...

  8. Newnan Wtr, Sewer & Light Comm | Open Energy Information

    Open Energy Info (EERE)

    Newnan Wtr, Sewer & Light Comm Jump to: navigation, search Name: Newnan Wtr, Sewer & Light Comm Place: Georgia Website: www.newnanutilities.org Outage Hotline: 770-683-5516...

  9. New Prague Utilities Comm | Open Energy Information

    Open Energy Info (EERE)

    New Prague Utilities Comm Place: Minnesota Phone Number: (952) 758-4401 Website: www.ci.new-prague.mn.usindex. Twitter: @CityofNewPrague Facebook: https:www.facebook.com...

  10. Williamstown Utility Comm | Open Energy Information

    Open Energy Info (EERE)

    Comm Place: Kentucky Phone Number: (859) 824-3633 Website: www.wtownky.orgDepartmentsEl Twitter: @WilliamstownKY Facebook: https:www.facebook.comWilliamstownKY Outage...

  11. Fort Valley Utility Comm | Open Energy Information

    Open Energy Info (EERE)

    Fort Valley Utility Comm Place: Georgia Phone Number: 478-825-7701 Website: fvutil.com Twitter: @fvutil Facebook: https:www.facebook.comfvutil Outage Map: fvutil.comnews...

  12. BioComms Training: Strategic Communications and Message Development

    Broader source: Energy.gov [DOE]

    Strategic Communications and Message Development: Presentation to EERE BioComms Group by Kearns & West.

  13. InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition.

    SciTech Connect (OSTI)

    Crawford, Mary Hagerott; Olson, S. M.; Banas, M.; Park, Y. -B.; Ladous, C.; Russell, Michael J.; Thaler, Gerald; Zahler, J. M.; Pinnington, T.; Koleske, Daniel David; Atwater, Harry A.

    2008-06-01

    We report growth of InGaN/GaN multi-quantum well (MQW) and LED structures on a novel composite substrate designed to eliminate the coefficient of thermal expansion (CTE) mismatch problems which impact GaN growth on bulk sapphire. To form the composite substrate, a thin sapphire layer is wafer-bonded to a polycrystalline aluminum nitride (P-AlN) support substrate. The sapphire layer provides the epitaxial template for the growth; however, the thermo-mechanical properties of the composite substrate are determined by the P-AlN. Using these substrates, thermal stresses associated with temperature changes during growth should be reduced an order of magnitude compared to films grown on bulk sapphire, based on published CTE data. In order to test the suitability of the substrates for GaN LED growth, test structures were grown by metalorganic chemical vapor deposition (MOCVD) using standard process conditions for GaN growth on sapphire. Bulk sapphire substrates were included as control samples in all growth runs. In situ reflectance monitoring was used to compare the growth dynamics for the different substrates. The material quality of the films as judged by X-ray diffraction (XRD), photoluminescence and transmission electron microscopy (TEM) was similar for the composite substrate and the sapphire control samples. Electroluminescence was obtained from the LED structure grown on a P-AlN composite substrate, with a similar peak wavelength and peak width to the control samples. XRD and Raman spectroscopy results confirm that the residual strain in GaN films grown on the composite substrates is dramatically reduced compared to growth on bulk sapphire substrates.

  14. Wisconsin Rapids W W & L Comm | Open Energy Information

    Open Energy Info (EERE)

    W W & L Comm Jump to: navigation, search Name: Wisconsin Rapids W W & L Comm Place: Wisconsin Phone Number: 715.423.6300 Website: wrwwlc.com Twitter: @wrwwlc Outage Hotline: (715)...

  15. North Branch Water & Light Comm | Open Energy Information

    Open Energy Info (EERE)

    North Branch Water & Light Comm Jump to: navigation, search Name: North Branch Water & Light Comm Place: Minnesota Phone Number: 651-674-7100 or 651-674-8113 Website:...

  16. Consortium for Algal Biofuels Commercialization (CAB-Comm)

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Consortium for Algal Biofuels Commercialization (CAB-Comm) March 23, 2015 Biomass Program Algae Peer Review Stephen Mayfield University of California, San Diego This presentation ...

  17. New Ulm Public Utilities Comm | Open Energy Information

    Open Energy Info (EERE)

    New Ulm Public Utilities Comm Place: Minnesota Phone Number: (507) 359-8264 Website: www.ci.new-ulm.mn.usindex.asp Facebook: https:www.facebook.compagesCity-of-New-UlmNew-Ulm-...

  18. Redwood Falls Public Util Comm | Open Energy Information

    Open Energy Info (EERE)

    Comm Place: Minnesota Phone Number: 507-627-1301 Website: www.ci.redwood-falls.mn.uscit Outage Hotline: 507-627-8430 References: EIA Form EIA-861 Final Data File for 2010 -...

  19. Spring Valley Pub Utils Comm | Open Energy Information

    Open Energy Info (EERE)

    Name: Spring Valley Pub Utils Comm Place: Minnesota Website: www.smmpa.orgmembersspring-v Outage Hotline: 507.346.7622 References: EIA Form EIA-861 Final Data File for 2010 -...

  20. Consortium for Algal Biofuel Commercialization (CAB-COMM) Final Report

    SciTech Connect (OSTI)

    Mayfield, Stephen P.

    2015-12-04

    The Consortium for Algal Biofuel Commercialization (CAB-Comm) was established in 2010 to conduct research to enable commercial viability of alternative liquid fuels produced from algal biomass. The main objective of CAB-Comm was to dramatically improve the viability of algae as a source of liquid fuels to meet US energy needs, by addressing several significant barriers to economic viability. To achieve this goal, CAB-Comm took a diverse set of approaches on three key aspects of the algal biofuels value chain: crop protection; nutrient utilization and recycling; and the development of genetic tools. These projects have been undertaken as collaboration between six academic institutions and two industrial partners: University of California, San Diego; Scripps Institution of Oceanography; University of Nebraska, Lincoln; Rutgers University; University of California, Davis; Johns Hopkins University; Sapphire Energy; and Life Technologies.

  1. Q3dComms Version 0.9

    Energy Science and Technology Software Center (OSTI)

    2012-01-05

    Q3dComms provides an interface to the commercial package Quest30 . Quest30 connectors called "channels" can be directly mapped to Umbra connectors using this tool. Furthermore, virtual 30 worlds created in Quest30 can be connected to Umbra with this tool.

  2. CAB-Comm Final Report Documents Accomplishments from Six Years of Algal

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Research | Department of Energy CAB-Comm Final Report Documents Accomplishments from Six Years of Algal Research CAB-Comm Final Report Documents Accomplishments from Six Years of Algal Research May 10, 2016 - 5:40pm Addthis The Consortium for Algal Biofuel Commercialization (CAB-Comm), led by the University of California, San Diego, has just released its final report, detailing the many accomplishments and impactful contributions achieved in its six years of operation. CAB-Comm was

  3. Diffusion bonding

    DOE Patents [OSTI]

    Anderson, Robert C.

    1976-06-22

    1. A method for joining beryllium to beryllium by diffusion bonding, comprising the steps of coating at least one surface portion of at least two beryllium pieces with nickel, positioning a coated surface portion in a contiguous relationship with an other surface portion, subjecting the contiguously disposed surface portions to an environment having an atmosphere at a pressure lower than ambient pressure, applying a force upon the beryllium pieces for causing the contiguous surface portions to abut against each other, heating the contiguous surface portions to a maximum temperature less than the melting temperature of the beryllium, substantially uniformly decreasing the applied force while increasing the temperature after attaining a temperature substantially above room temperature, and maintaining a portion of the applied force at a temperature corresponding to about maximum temperature for a duration sufficient to effect the diffusion bond between the contiguous surface portions.

  4. COMM REF

    Office of Legacy Management (LM)

    facilities will be only the Eberline facility at site. 11. ZIA will nave a safety man on site for at least first two days. ZIA will provide copy of safety manual to G....

  5. Method of bonding metals to ceramics

    DOE Patents [OSTI]

    Maroni, V.A.

    1991-04-23

    A ceramic or glass having a thin layer of silver, gold or alloys thereof at the surface thereof is disclosed. A first metal is bonded to the thin layer and a second metal is bonded to the first metal. The first metal is selected from the class consisting of In, Ga, Sn, Bi, Zn, Cd, Pb, Tl and alloys thereof, and the second metal is selected from the class consisting of Cu, Al, Pb, Au and alloys thereof. 3 figures.

  6. Method of bonding metals to ceramics

    DOE Patents [OSTI]

    Maroni, Victor A.

    1991-01-01

    A ceramic or glass having a thin layer of silver, gold or alloys thereof at the surface thereof. A first metal is bonded to the thin layer and a second metal is bonded to the first metal. The first metal is selected from the class consisting of In, Ga, Sn, Bi, Zn, Cd, Pb, Tl and alloys thereof, and the second metal is selected from the class consisting of Cu, Al, Pb, An and alloys thereof.

  7. Structural transformations in amorphous ↔ crystalline phase change of Ga-Sb alloys

    SciTech Connect (OSTI)

    Edwards, T. G.; Sen, S.; Hung, I.; Gan, Z.; Kalkan, B.; Raoux, S.

    2013-12-21

    Ga-Sb alloys with compositions ranging between ∼12 and 50 at. % Ga are promising materials for phase change random access memory applications. The short-range structures of two such alloys with compositions Ga{sub 14}Sb{sub 86} and Ga{sub 46}Sb{sub 54} are investigated, in their amorphous and crystalline states, using {sup 71}Ga and {sup 121}Sb nuclear magnetic resonance spectroscopy and synchrotron x-ray diffraction. The Ga and Sb atoms are fourfold coordinated in the as-deposited amorphous Ga{sub 46}Sb{sub 54} with nearly 40% of the constituent atoms being involved in Ga-Ga and Sb-Sb homopolar bonding. This necessitates extensive bond switching and elimination of homopolar bonds during crystallization. On the other hand, Ga and Sb atoms are all threefold coordinated in the as-deposited amorphous Ga{sub 14}Sb{sub 86}. Crystallization of this material involves phase separation of GaSb domains in Sb matrix and a concomitant increase in the Ga coordination number from 3 to 4. Results from crystallization kinetics experiments suggest that the melt-quenching results in the elimination of structural “defects” such as the homopolar bonds and threefold coordinated Ga atoms in the amorphous phases of these alloys, thereby rendering them structurally more similar to the corresponding crystalline states compared to the as-deposited amorphous phases.

  8. Four-Junction Solar Cell with 40% Target Efficiency Fabricated by Wafer Bonding and Layer Transfer: Final Technical Report, 1 January 2005 - 31 December 2007

    SciTech Connect (OSTI)

    Atwater, H. A.

    2008-11-01

    We realized high-quality InGaP/GaAs 2-junction top cells on Ge/Si, InGaAs/InP bottom cells, direct-bond series interconnection of tandem cells, and modeling of bonded 3- and 4-junction device performance.

  9. Wafer-Bonded Internal Back-Surface Reflectors for Enhanced TPV Performance

    SciTech Connect (OSTI)

    C.A. Wang; P.G. Murphy; P.W. O'Brien; D.A. Shiau; A.C. Anderson; Z.L. Liau; D.M. Depoy; G. Nichols

    2002-08-12

    This paper discusses recent efforts to realize GaInAsSb/GaSb TPV cells with an internal back-surface reflector (BSR). The cells are fabricated by wafer bonding the GaInAsSb/GaSb device layers to GaAs substrates with a dielectric/Au reflector, and subsequently removing the GaSb substrate. The internal BSR enhances optical absorption within the device while the dielectric layer provides electrical isolation. This approach is compatible with monolithic integration of series-connected TPV cells and can mitigate the requirements of filters used for front-surface spectral control.

  10. Trending: Metal Oxo Bonds

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Trending: Metal Oxo Bonds Trending: Metal Oxo Bonds Print Wednesday, 29 May 2013 00:00 Metal oxides are important for scientific and technical applications in a variety of disciplines, including materials science, chemistry, and biology. Highly covalent metal-oxygen multiple bonds (metal oxos) are the building blocks of metal oxides and have a bearing on the oxide's desirable chemical, magnetic, electronic, and thermal properties. The lack of a more sophisticated grasp of bonding in metal oxides

  11. Method of bonding metals to ceramics

    DOE Patents [OSTI]

    Maroni, Victor A.

    1992-01-01

    A method of forming a composite by providing a ceramic capable of having zero electrical resistance and complete diamagnetism at superconducting temperatures, bonding a thin layer of Ag, Au or alloys thereof with the ceramic. Thereafter, there is bonded a first metal to the ceramic surface at a temperature less than about 400.degree. C., and then a second metal is bonded to the first metal at a temperature less than about 400.degree. C. to form a composite wherein the first metal is selected from the class consisting of In, Ga, Sn, Bi, Zn, Cd, Pb, Ti and alloys thereof and wherein the second metal is selected from the class consisting of Al, Cu, Pb and Zn and alloys thereof.

  12. Bonding thermoplastic polymers

    DOE Patents [OSTI]

    Wallow, Thomas I.; Hunter, Marion C.; Krafcik, Karen Lee; Morales, Alfredo M.; Simmons, Blake A.; Domeier, Linda A.

    2008-06-24

    We demonstrate a new method for joining patterned thermoplastic parts into layered structures. The method takes advantage of case-II permeant diffusion to generate dimensionally controlled, activated bonding layers at the surfaces being joined. It is capable of producing bonds characterized by cohesive failure while preserving the fidelity of patterned features in the bonding surfaces. This approach is uniquely suited to production of microfluidic multilayer structures, as it allows the bond-forming interface between plastic parts to be precisely manipulated at micrometer length scales. The bond enhancing procedure is easily integrated in standard process flows and requires no specialized equipment.

  13. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  14. Qualified Energy Conservation Bonds (QECBs)

    Broader source: Energy.gov [DOE]

    With tax credit bonds, generally the borrower who issues the bond pays back only the principal of the bond, and the bondholder receives federal tax credits in lieu of the traditional bond interest...

  15. Bonded semiconductor substrate

    DOE Patents [OSTI]

    Atwater, Jr.; Harry A. , Zahler; James M.

    2010-07-13

    Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600.degree. C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.

  16. Trending: Metal Oxo Bonds

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Trending: Metal Oxo Bonds Print Metal oxides are important for scientific and technical applications in a variety of disciplines, including materials science, chemistry, and biology. Highly covalent metal-oxygen multiple bonds (metal oxos) are the building blocks of metal oxides and have a bearing on the oxide's desirable chemical, magnetic, electronic, and thermal properties. The lack of a more sophisticated grasp of bonding in metal oxides constitutes a roadblock to innovation in a wide

  17. Trending: Metal Oxo Bonds

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Trending: Metal Oxo Bonds Print Metal oxides are important for scientific and technical applications in a variety of disciplines, including materials science, chemistry, and biology. Highly covalent metal-oxygen multiple bonds (metal oxos) are the building blocks of metal oxides and have a bearing on the oxide's desirable chemical, magnetic, electronic, and thermal properties. The lack of a more sophisticated grasp of bonding in metal oxides constitutes a roadblock to innovation in a wide

  18. Trending: Metal Oxo Bonds

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Trending: Metal Oxo Bonds Print Metal oxides are important for scientific and technical applications in a variety of disciplines, including materials science, chemistry, and biology. Highly covalent metal-oxygen multiple bonds (metal oxos) are the building blocks of metal oxides and have a bearing on the oxide's desirable chemical, magnetic, electronic, and thermal properties. The lack of a more sophisticated grasp of bonding in metal oxides constitutes a roadblock to innovation in a wide

  19. Trending: Metal Oxo Bonds

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Trending: Metal Oxo Bonds Print Metal oxides are important for scientific and technical applications in a variety of disciplines, including materials science, chemistry, and biology. Highly covalent metal-oxygen multiple bonds (metal oxos) are the building blocks of metal oxides and have a bearing on the oxide's desirable chemical, magnetic, electronic, and thermal properties. The lack of a more sophisticated grasp of bonding in metal oxides constitutes a roadblock to innovation in a wide

  20. Trending: Metal Oxo Bonds

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Trending: Metal Oxo Bonds Print Metal oxides are important for scientific and technical applications in a variety of disciplines, including materials science, chemistry, and biology. Highly covalent metal-oxygen multiple bonds (metal oxos) are the building blocks of metal oxides and have a bearing on the oxide's desirable chemical, magnetic, electronic, and thermal properties. The lack of a more sophisticated grasp of bonding in metal oxides constitutes a roadblock to innovation in a wide

  1. BONDING ALUMINUM METALS

    DOE Patents [OSTI]

    Noland, R.A.; Walker, D.E.

    1961-06-13

    A process is given for bonding aluminum to aluminum. Silicon powder is applied to at least one of the two surfaces of the two elements to be bonded, the two elements are assembled and rubbed against each other at room temperature whereby any oxide film is ruptured by the silicon crystals in the interface; thereafter heat and pressure are applied whereby an aluminum-silicon alloy is formed, squeezed out from the interface together with any oxide film, and the elements are bonded.

  2. Public Bonding Options

    Broader source: Energy.gov [DOE]

    State and local governments have had the ability to issue debt, in the form of bonds, to finance construction and/or improvements to public infrastructure.

  3. Qualified Energy Conservation Bonds

    Broader source: Energy.gov [DOE]

    A Qualified Energy Conservation Bond (QECB) is a bond that enables qualified state, tribal, and local government issuers to borrow money at attractive rates to fund energy conservation projects (it is important to note that QECBs are not grants). A QECB is among the lowest-cost public financing tools because the U.S. Department of the Treasury subsidizes the issuer's borrowing costs.

  4. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  5. Bond order potential module for LAMMPS

    Energy Science and Technology Software Center (OSTI)

    2012-09-11

    pair_bop is a module for performing energy calculations using the Bond Order Potential (BOP) for use in the parallel molecular dynamics code LAMMPS. The bop pair style computes BOP based upon quantum mechanical incorporating both sigma and pi bondings. By analytically deriving the BOP pair bop from quantum mechanical theory its transferability to different phases can approach that of quantum mechanical methods. This potential is extremely effective at modeling 111-V and II-VI compounds such asmore » GaAs and CdTe. This potential is similar to the original BOP developed by Pettifor and later updated by Murdock et al. and Ward et al.« less

  6. Bonding aerogels with polyurethanes

    SciTech Connect (OSTI)

    Matthews, F.M.; Hoffman, D.M.

    1989-11-01

    Aerogels, porous silica glasses with ultra-fine cell size (30nm), are made by a solution gelation (sol-gel) process. The resulting gel is critical point dried to densities from 0.15--0.60 g/cc. This material is machinable, homogeneous, transparent, coatable and bondable. To bond aerogel an adhesive should have long cure time, no attack on the aerogel structure, and high strength. Several epoxies and urethanes were examined to determine if they satisfied these conditions. Bond strengths above 13 psi were found with double bubble and DP-110 epoxies and XI-208/ODA-1000 and Castall U-2630 urethanes. Hardman Kalex Tough Stuff'' A-85 hardness urethane gave 18 psi bond strength. Hardman A-85, Tuff-Stuff'' was selected for further evaluation because it produced bond strengths comparable to the adherend cohesive strength. 5 refs., 2 figs.

  7. Qualified Energy Conservation Bonds

    Broader source: Energy.gov [DOE]

    Provides an in-depth description of qualified energy conservation bonds, including process and mechanics, case studies, utilization trends, barriers, and regulatory and legal issues. Author: Energy Programs Consortium

  8. Low temperature material bonding technique

    DOE Patents [OSTI]

    Ramsey, J. Michael (Knoxville, TN); Foote, Robert S. (Oak Ridge, TN)

    2002-02-12

    A method of performing a lower temperature bonding technique to bond together two mating pieces of glass includes applying a sodium silicate aqueous solution between the two pieces.

  9. Low Temperature Material Bonding Technique

    DOE Patents [OSTI]

    Ramsey, J. Michael (Knoxville, TN); Foote, Robert S. (Oak Ridge, TN)

    2000-10-10

    A method of performing a lower temperature bonding technique to bond together two mating pieces of glass includes applying a sodium silicate aqueous solution between the two pieces.

  10. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992

    SciTech Connect (OSTI)

    Venkatasubramanian, R.

    1993-01-01

    This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The ``cycled`` organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al{sub 0.34}Ga{sub 0.66}As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  11. Diffusion Bonding Characterization

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Diffusion Bonding Characterization - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Fuel Cycle Defense Waste Management

  12. Photochemical tissue bonding

    DOE Patents [OSTI]

    Redmond, Robert W.; Kochevar, Irene E.

    2012-01-10

    Photochemical tissue bonding methods include the application of a photosensitizer to a tissue and/or tissue graft, followed by irradiation with electromagnetic energy to produce a tissue seal. The methods are useful for tissue adhesion, such as in wound closure, tissue grafting, skin grafting, musculoskeletal tissue repair, ligament or tendon repair and corneal repair.

  13. GRAPHITE BONDING METHOD

    DOE Patents [OSTI]

    King, L.D.P.

    1964-02-25

    A process for bonding or joining graphite members together in which a thin platinum foil is placed between the members, heated in an inert atmosphere to a temperature of 1800 deg C, and then cooled to room temperature is described. (AEC)

  14. Low temperature reactive bonding

    DOE Patents [OSTI]

    Makowiecki, Daniel M. (Livermore, CA); Bionta, Richard M. (Livermore, CA)

    1995-01-01

    The joining technique requires no external heat source and generates very little heat during joining. It involves the reaction of thin multilayered films deposited on faying surfaces to create a stable compound that functions as an intermediate or braze material in order to create a high strength bond. While high temperatures are reached in the reaction of the multilayer film, very little heat is generated because the films are very thin. It is essentially a room temperature joining process.

  15. New Clean Renewable Energy Bonds

    Broader source: Energy.gov [DOE]

    New clean renewable energy bonds (CREBs) are tax credit bonds, the proceeds of which are used for capital expenditures incurred by governmental bodies (including states and municipalities), public power providers, or cooperative electric companies for a "qualified renewable energy facility."

  16. Bond Program | Open Energy Information

    Open Energy Info (EERE)

    Bond Program Jump to: navigation, search This article is a stub. You can help OpenEI by expanding it. Retrieved from "http:en.openei.orgwindex.php?titleBondProgram&oldid5427...

  17. IMPROVED BONDING METHOD

    DOE Patents [OSTI]

    Padgett, E.V. Jr.; Warf, D.H.

    1964-04-28

    An improved process of bonding aluminum to aluminum without fusion by ultrasonic vibrations plus pressure is described. The surfaces to be bonded are coated with an aqueous solution of alkali metal stearate prior to assembling for bonding. (AEC) O H19504 Present information is reviewed on steady state proliferation, differentiation, and maturation of blood cells in mammals. Data are cited from metabolic tracer studies, autoradiographic studies, cytologic studies, studies of hematopoietic response to radiation injuries, and computer analyses of blood cell production. A 3-step model for erythropoiesis and a model for granulocyte kinetics are presented. New approaches to the study of lymphocytopoiesis described include extracorporeal blood irradiation to deplete lymphocytic tissue without direct injury to the formative tissues as a means to study the stressed system, function control, and rates of proliferation. It is pointed out that present knowledge indicates that lymphocytes comprise a mixed family, with diverse life spans, functions, and migration patterns with apparent aimless recycling from modes to lymph to blood to nodes that has not yet been quantitated. Areas of future research are postulated. (70 references.) (C.H.)

  18. Qualified Energy Conservation Bond Webinars

    Broader source: Energy.gov [DOE]

    Provides a listing of past qualified energy conservation bond webinars and associated files. Author: U.S. Department of Energy

  19. Bonding Tools | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Bonding Tools Bonding Tools Bonds are one of the most common forms of financing used by state and local governments, because they are a low-cost source of capital available to most entities. State and local officials may consider using bonds for a variety of clean energy purposes, including: Financing a specific set of energy upgrades in their own facilities (can be combined with an energy savings performance contract) Capitalizing finance programs (e.g., revolving loan fund) for public sector

  20. Wafer bonded epitaxial templates for silicon heterostructures

    DOE Patents [OSTI]

    Atwater, Jr., Harry A.; Zahler, James M.; Morral, Anna Fontcubera I

    2008-03-11

    A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

  1. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  2. General Atomics (GA) | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's...

  3. Low temperature reactive bonding

    DOE Patents [OSTI]

    Makowiecki, D.M.; Bionta, R.M.

    1995-01-17

    The joining technique is disclosed that requires no external heat source and generates very little heat during joining. It involves the reaction of thin multilayered films deposited on faying surfaces to create a stable compound that functions as an intermediate or braze material in order to create a high strength bond. While high temperatures are reached in the reaction of the multilayer film, very little heat is generated because the films are very thin. It is essentially a room temperature joining process. 5 figures.

  4. Solder extrusion pressure bonding process and bonded products produced thereby

    DOE Patents [OSTI]

    Beavis, L.C.; Karnowsky, M.M.; Yost, F.G.

    1992-06-16

    Disclosed is a process for production of soldered joints which are highly reliable and capable of surviving 10,000 thermal cycles between about [minus]40 C and 110 C. Process involves interposing a thin layer of a metal solder composition between the metal surfaces of members to be bonded and applying heat and up to about 1000 psi compression pressure to the superposed members, in the presence of a reducing atmosphere, to extrude the major amount of the solder composition, contaminants including fluxing gases and air, from between the members being bonded, to form a very thin, strong intermetallic bonding layer having a thermal expansion tolerant with that of the bonded members.

  5. Solder extrusion pressure bonding process and bonded products produced thereby

    DOE Patents [OSTI]

    Beavis, Leonard C.; Karnowsky, Maurice M.; Yost, Frederick G.

    1992-01-01

    Production of soldered joints which are highly reliable and capable of surviving 10,000 thermal cycles between about -40.degree. C. and 110.degree. C. Process involves interposing a thin layer of a metal solder composition between the metal surfaces of members to be bonded and applying heat and up to about 1000 psi compression pressure to the superposed members, in the presence of a reducing atmosphere, to extrude the major amount of the solder composition, contaminants including fluxing gases and air, from between the members being bonded, to form a very thin, strong intermetallic bonding layer having a thermal expansion tolerant with that of the bonded members.

  6. Understanding oxygen adsorption on 9.375 at. % Ga-stabilized δ-Pu (111) surface: A DFT study

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hernandez, Sarah C.; Wilkerson, Marianne P.; Huda, Muhammad N.

    2015-08-30

    Plutonium (Pu) metal reacts rapidly in the presence of oxygen (O), resulting in an oxide layer that will eventually have an olive green rust appearance over time. Recent experimental work suggested that the incorporation of gallium (Ga) as an alloying impurity to stabilize the highly symmetric high temperature δ-phase lattice may also provide resistance against corrosion/oxidation of plutonium. In this paper, we modeled a 9.375 at. % Ga stabilized δ-Pu (111) surface and investigated adsorption of atomic O using all-electron density functional theory. Key findings revealed that the O bonded strongly to a Pu-rich threefold hollow fcc site with amore » chemisorption energy of –5.06 eV. Migration of the O atom to a Pu-rich environment was also highly sensitive to the surface chemistry of the Pu–Ga surface; when the initial on-surface O adsorption site included a bond to a nearest neighboring Ga atom, the O atom relaxed to a Ga deficient environment, thus affirming the O preference for Pu. Only one calculated final on-surface O adsorption site included a Ga-O bond, but this chemisorption energy was energetically unfavorable. Chemisorption energies for interstitial adsorption sites that included a Pu or Pu-Ga environment suggested that over-coordination of the O atom was energetically unfavorable as well. Electronic structure properties of the on-surface sites, illustrated by the partial density of states, implied that the Ga 4p states indirectly but strongly influenced the Pu 6d states strongly to hybridize with the O 2p states, while also weakly influenced the Pu 5f states to hybridize with the O 2p states, even though Ga was not participating in bonding with O.« less

  7. Understanding oxygen adsorption on 9.375 at. % Ga-stabilized δ-Pu (111) surface: A DFT study

    SciTech Connect (OSTI)

    Hernandez, Sarah C.; Wilkerson, Marianne P.; Huda, Muhammad N.

    2015-08-30

    Plutonium (Pu) metal reacts rapidly in the presence of oxygen (O), resulting in an oxide layer that will eventually have an olive green rust appearance over time. Recent experimental work suggested that the incorporation of gallium (Ga) as an alloying impurity to stabilize the highly symmetric high temperature δ-phase lattice may also provide resistance against corrosion/oxidation of plutonium. In this paper, we modeled a 9.375 at. % Ga stabilized δ-Pu (111) surface and investigated adsorption of atomic O using all-electron density functional theory. Key findings revealed that the O bonded strongly to a Pu-rich threefold hollow fcc site with a chemisorption energy of –5.06 eV. Migration of the O atom to a Pu-rich environment was also highly sensitive to the surface chemistry of the Pu–Ga surface; when the initial on-surface O adsorption site included a bond to a nearest neighboring Ga atom, the O atom relaxed to a Ga deficient environment, thus affirming the O preference for Pu. Only one calculated final on-surface O adsorption site included a Ga-O bond, but this chemisorption energy was energetically unfavorable. Chemisorption energies for interstitial adsorption sites that included a Pu or Pu-Ga environment suggested that over-coordination of the O atom was energetically unfavorable as well. Electronic structure properties of the on-surface sites, illustrated by the partial density of states, implied that the Ga 4p states indirectly but strongly influenced the Pu 6d states strongly to hybridize with the O 2p states, while also weakly influenced the Pu 5f states to hybridize with the O 2p states, even though Ga was not participating in bonding with O.

  8. Method of bonding

    DOE Patents [OSTI]

    Saller, deceased, Henry A. (late of Columbus, OH); Hodge, Edwin S. (Columbus, OH); Paprocki, Stanley J. (Columbus, OH); Dayton, Russell W. (Columbus, OH)

    1987-12-01

    1. A method of making a fuel-containing structure for nuclear reactors, comprising providing an assembly comprising a plurality of fuel units; each fuel unit consisting of a core plate containing thermal-neutron-fissionable material, sheets of cladding metal on its bottom and top surfaces, said cladding sheets being of greater width and length than said core plates whereby recesses are formed at the ends and sides of said core plate, and end pieces and first side pieces of cladding metal of the same thickness as the core plate positioned in said recesses, the assembly further comprising a plurality of second side pieces of cladding metal engaging the cladding sheets so as to space the fuel units from one another, and a plurality of filler plates of an acid-dissolvable nonresilient material whose melting point is above 2000.degree. F., each filler plate being arranged between a pair of said second side pieces and the cladding plates of two adjacent fuel units, the filler plates having the same thickness as the second side pieces; the method further comprising enclosing the entire assembly in an envelope; evacuating the interior of the entire assembly through said envelope; applying inert gas under a pressure of about 10,000 psi to the outside of said envelope while at the same time heating the assembly to a temperature above the flow point of the cladding metal but below the melting point of any material of the assembly, whereby the envelope is pressed against the assembly and integral bonds are formed between plates, sheets, first side pieces, and end pieces and between the sheets and the second side pieces; slowly cooling the assembly to room temperature; removing the envelope; and dissolving the filler plates without attacking the cladding metal.

  9. Smart interfacial bonding alloys

    SciTech Connect (OSTI)

    R. Q. Hwang; J. C. Hamilton; J. E. Houston

    1999-04-01

    The goal of this LDRD was to explore the use of the newly discovered strain-stabilized 2-D interfacial alloys as smart interface bonding alloys (SIBA). These materials will be used as templates for the heteroepitaxial growth of metallic thin films. SIBA are formed by two metallic components which mix at an interface to relieve strain and prevent dislocations from forming in subsequent thin film growth. The composition of the SIBA is determined locally by the amount of strain, and therefore can react smartly to areas of the highest strain to relieve dislocations. In this way, SIBA can be used to tailor the dislocation structure of thin films. This project included growth, characterization and modeling of films grown using SIBA templates. Characterization will include atomic imaging of the dislocations structure, measurement of the mechanical properties of the film using interface force microscopy (IFM) and the nanoindenter, and measurement of the electronic structure of the SIBA with synchrotron photoemission. Resistance of films to sulfidation and oxidation will also be examined. The Paragon parallel processing computer will be used to calculate the structure of the SIBA and thin films in order to develop ability to predict and tailor SIBA and thin film behavior. This work will lead to the possible development of a new class of thin film materials with properties tailored by varying the composition of the SIBA, serving as a buffer layer to relieve the strain between the substrate and the thin film. Such films will have improved mechanical and corrosion resistance allowing application as protective barriers for weapons applications. They will also exhibit enhanced electrical conductivity and reduced electromigration making them particularly suitable for application as interconnects and other electronic needs.

  10. Method for vacuum fusion bonding

    DOE Patents [OSTI]

    Ackler, Harold D.; Swierkowski, Stefan P.; Tarte, Lisa A.; Hicks, Randall K.

    2001-01-01

    An improved vacuum fusion bonding structure and process for aligned bonding of large area glass plates, patterned with microchannels and access holes and slots, for elevated glass fusion temperatures. Vacuum pumpout of all components is through the bottom platform which yields an untouched, defect free top surface which greatly improves optical access through this smooth surface. Also, a completely non-adherent interlayer, such as graphite, with alignment and location features is located between the main steel platform and the glass plate pair, which makes large improvements in quality, yield, and ease of use, and enables aligned bonding of very large glass structures.

  11. Fusion bonding and alignment fixture

    DOE Patents [OSTI]

    Ackler, Harold D.; Swierkowski, Stefan P.; Tarte, Lisa A.; Hicks, Randall K.

    2000-01-01

    An improved vacuum fusion bonding structure and process for aligned bonding of large area glass plates, patterned with microchannels and access holes and slots, for elevated glass fusion temperatures. Vacuum pumpout of all the components is through the bottom platform which yields an untouched, defect free top surface which greatly improves optical access through this smooth surface. Also, a completely non-adherent interlayer, such as graphite, with alignment and location features is located between the main steel platform and the glass plate pair, which makes large improvements in quality, yield, and ease of use, and enables aligned bonding of very large glass structures.

  12. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  13. Clean Energy Revenue Bond Program

    Office of Energy Efficiency and Renewable Energy (EERE)

    The bonds are exempt from taxation by the state, and any type of renewable energy system and most energy efficiency measures, including energy recovery and combined heat and power (CHP) systems,...

  14. Activation of small alkanes in Ga-exchanged zeolites: A quantum chemical study of ethane dehydrogenation

    SciTech Connect (OSTI)

    Frash, M.V.; Santen, R.A. van

    2000-03-23

    Quantum chemical calculations on the mechanism of ethane dehydrogenation catalyzed by Ga-exchanged zeolites have been undertaken. Two forms of gallium, adsorbed dihydride gallium ion GaH{sub 2}+Z{sup {minus}} and adsorbed gallyl ion [Ga=O]{sup +}Z{sup {minus}}, were considered. It was found that GaH{sub 2}{sup +}Z{sup {minus}} is the likely active catalyst. On the contrary, [Ga=O]{sup +}Z{sup {minus}} cannot be a working catalyst in nonoxidative conditions, because regeneration of this form is very difficult. Activation of ethane by GaH{sub 2}{sup +}Z{sup {minus}} occurs via an alkyl mechanism and the gallium atom acts as an acceptor of the ethyl group. The carbenium activation of ethane, with gallium abstracting a hydride ion, is much (ca. 51 kcal/mol) more difficult. The catalytic cycle for the alkyl activation consists of three elementary steps: (1) rupture of the ethane C-H bond; (2) formation of dihydrogen from the Bronsted proton and hydrogen bound to Ga; and (3) formation of ethene from the ethyl group bound to Ga. The best estimates (MP2/6--311++G(2df,p)//B3LYP/6--31G*) for the activation energies of these three steps are 36.9, ca. 0, and 57.9 kcal/mol, respectively.

  15. Local Option- Industrial Facilities and Development Bonds

    Broader source: Energy.gov [DOE]

    Under the Utah Industrial Facilities and Development Act, counties, municipalities, and state universities in Utah may issue Industrial Revenue Bonds (IRBs) or Industrial Development Bonds (IDBs)...

  16. Method to improve commercial bonded SOI material

    DOE Patents [OSTI]

    Maris, Humphrey John; Sadana, Devendra Kumar

    2000-07-11

    A method of improving the bonding characteristics of a previously bonded silicon on insulator (SOI) structure is provided. The improvement in the bonding characteristics is achieved in the present invention by, optionally, forming an oxide cap layer on the silicon surface of the bonded SOI structure and then annealing either the uncapped or oxide capped structure in a slightly oxidizing ambient at temperatures greater than 1200.degree. C. Also provided herein is a method for detecting the bonding characteristics of previously bonded SOI structures. According to this aspect of the present invention, a pico-second laser pulse technique is employed to determine the bonding imperfections of previously bonded SOI structures.

  17. Covalent Bonding in Actinide Sandwich Molecules

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    describe bonding in organometallics are at frequently at odds with classical coordination chemistry, in that they invoke a covalent bond between the metal and the carbon-based...

  18. Low Temperature Material Bonding Techniq Ue

    DOE Patents [OSTI]

    Ramsey, J. Michael; Foote, Robert S.

    2002-08-06

    A method of performing a lower temperature bonding technique to bond together two mating pieces of glass includes applying a sodium silicate aqueous solution between the two pieces.

  19. GA SNC Solar | Open Energy Information

    Open Energy Info (EERE)

    GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and Sierra Nevada Corp. References: GA-SNC...

  20. Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

    SciTech Connect (OSTI)

    Daix, N. Uccelli, E.; Czornomaz, L.; Caimi, D.; Rossel, C.; Sousa, M.; Siegwart, H.; Marchiori, C.; Fompeyrine, J.; Hartmann, J. M.; Shiu, K.-T.; Cheng, C.-W.; Krishnan, M.; Lofaro, M.; Kobayashi, M.; Sadana, D.

    2014-08-01

    We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In{sub 0.53}Ga{sub 0.47}As (InGaAs) active layer is equal to 3.5 10{sup 9} cm{sup ?2}, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm{sup 2}/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 20003000 cm{sup 2}/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

  1. Transient liquid phase ceramic bonding

    DOE Patents [OSTI]

    Glaeser, Andreas M. (Berkeley, CA)

    1994-01-01

    Ceramics are joined to themselves or to metals using a transient liquid phase method employing three layers, one of which is a refractory metal, ceramic or alloy. The refractory layer is placed between two metal layers, each of which has a lower melting point than the refractory layer. The three layers are pressed between the two articles to be bonded to form an assembly. The assembly is heated to a bonding temperature at which the refractory layer remains solid, but the two metal layers melt to form a liquid. The refractory layer reacts with the surrounding liquid and a single solid bonding layer is eventually formed. The layers may be designed to react completely with each other and form refractory intermetallic bonding layers. Impurities incorporated into the refractory metal may react with the metal layers to form refractory compounds. Another method for joining ceramic articles employs a ceramic interlayer sandwiched between two metal layers. In alternative embodiments, the metal layers may include sublayers. A method is also provided for joining two ceramic articles using a single interlayer. An alternate bonding method provides a refractory-metal oxide interlayer placed adjacent to a strong oxide former. Aluminum or aluminum alloys are joined together using metal interlayers.

  2. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  3. Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy

    SciTech Connect (OSTI)

    Hosseini Vajargah, S.; Botton, G. A.; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.

    2012-11-01

    A GaSb film was grown on a Si(211) substrate using molecular beam epitaxy indicating full lattice relaxation as well as full lattice registration and dislocation-free growth in the plane perpendicular to the [01 - 1]-direction. Heteroepitaxy of GaSb on a Si(211) substrate is dominated by numerous first order and multiple higher order micro-twins. The atomic-resolved structural study of GaSb films by high-angle annular dark-field scanning transmission electron microscopy reveals that slight tilt, along with twinning, favors the lattice registry to Si(211) substrates. Preferential bonding of impinging Ga and Sb atoms at the interface due to two distinctive bonding sites on the Si(211) surface enables growth that is sublattice-ordered and free of anti-phase boundaries. The role of the substrate orientation on the strain distribution of GaSb epilayers is further elucidated by investigating the local change in the lattice parameter using the geometric phase analysis method and hence effectiveness of the lattice tilting in reducing the interfacial strain was confirmed further.

  4. Bonded polyimide fuel cell package

    SciTech Connect (OSTI)

    Morse, Jeffrey D.; Jankowski, Alan; Graff, Robert T.; Bettencourt, Kerry

    2010-06-08

    Described herein are processes for fabricating microfluidic fuel cell systems with embedded components in which micron-scale features are formed by bonding layers of DuPont Kapton.TM. polyimide laminate. A microfluidic fuel cell system fabricated using this process is also described.

  5. Non-bonded ultrasonic transducer

    DOE Patents [OSTI]

    Eoff, J.M.

    1984-07-06

    A mechanically assembled non-bonded ultrasonic transducer includes a substrate, a piezoelectric film, a wetting agent, a thin metal electrode, and a lens held in intimate contact by a mechanical clamp. No epoxy or glue is used in the assembly of this device.

  6. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  7. Structural and optical properties of (Ag,Cu)(In,Ga)Se{sub 2} polycrystalline thin film alloys

    SciTech Connect (OSTI)

    Boyle, J. H.; Shafarman, W. N.; Birkmire, R. W.; McCandless, B. E.

    2014-06-14

    The structural and optical properties of pentenary alloy (Ag,Cu)(In,Ga)Se{sub 2} polycrystalline thin films were characterized over the entire compositional range at a fixed (Cu + Ag)/(In + Ga) ratio. Films deposited at 550 °C on bare and molybdenum coated soda-lime glass by elemental co-evaporation in a single-stage process with constant incident fluxes exhibit single phase chalcopyrite structure, corresponding to 122 spacegroup (I-42d) over the entire compositional space. Unit cell refinement of the diffraction patterns show that increasing Ag substitution for Cu, the refined a{sub o} lattice constant, (Ag,Cu)-Se bond length, and anion displacement increase in accordance with the theoretical model proposed by Jaffe, Wei, and Zunger. However, the refined c{sub o} lattice constant and (In,Ga)-Se bond length deviated from theoretical expectations for films with mid-range Ag and Ga compositions and are attributed to influences from crystallographic bond chain ordering or cation electronegativity. The optical band gap, derived from transmission and reflection measurements, widened with increasing Ag and Ga content, due to influences from anion displacement and cation electronegativity, as expected from theoretical considerations for pseudo-binary chalcopyrite compounds.

  8. INFORMATION REGARDING PERFORMANCE AND PAYMENT BONDS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    PAYMENT BOND A payment bond assures payments as required by law to all persons supplying labor or material in the prosecution of the work provided for in the Subcontract. A...

  9. Hi Bond Tapes Ltd | Open Energy Information

    Open Energy Info (EERE)

    Hi Bond Tapes Ltd Jump to: navigation, search Name: Hi-Bond Tapes Ltd Place: Northamptonshire, England, United Kingdom Zip: NN17 5TS Product: Northamptonshire-based supplier of...

  10. Qualified Energy Conservation Bond (QECB) Update: New

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Both tax credit and direct payment bonds subsidize borrowing costs; thus far, most QECBs have been issued as direct subsidy bonds, due to lack of investor appetite for tax credit ...

  11. Covalent Bonding in Actinide Sandwich Molecules

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Covalent Bonding in Actinide Sandwich Molecules Covalent Bonding in Actinide Sandwich Molecules Print Wednesday, 28 May 2014 00:00 Glenn Seaborg was one of the first scientists to recognize that differences in the degree of covalent bonding in lanthanide and actinide compounds could have profound consequences for their unique chemical reactivity and physical properties. Now, researchers working at ALS Beamline 11.0.2 have found evidence for unexpected bonding interactions in two organometallic

  12. Taking Advantage of Qualified Energy Conservation Bonds

    Broader source: Energy.gov [DOE]

    This webinar, held on Sept. 22, 2010, provides information on qualified energy conservation bonds. Examples include New York and Colorado.

  13. General Atomics (GA) Fusion News: A New Spin on Understanding...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New ...

  14. Clean Energy and Bond Finance Initiative

    Broader source: Energy.gov [DOE]

    Provides information on Clean Energy and Bond Finance Initiative (CE+BFI). CE+BFI brings together public infrastructure finance agencies, clean energy public fund managers and institutional investors across the country to explore how to raise capital at scale for clean energy development through bond financing. Author: Clean Energy and Bond Finance Initiative

  15. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  16. Electrochemical removal of hydrogen atoms in Mg-doped GaN epitaxial layers

    SciTech Connect (OSTI)

    Lee, June Key E-mail: hskim7@jbnu.ac.kr; Hyeon, Gil Yong; Tawfik, Wael Z.; Choi, Hee Seok; Ryu, Sang-Wan; Jeong, Tak; Jung, Eunjin; Kim, Hyunsoo E-mail: hskim7@jbnu.ac.kr

    2015-05-14

    Hydrogen atoms inside of an Mg-doped GaN epitaxial layer were effectively removed by the electrochemical potentiostatic activation (EPA) method. The role of hydrogen was investigated in terms of the device performance of light-emitting diodes (LEDs). The effect of the main process parameters for EPA such as solution type, voltage, and time was studied and optimized for application to LED fabrication. In optimized conditions, the light output of 385-nm LEDs was improved by about 26% at 30 mA, which was caused by the reduction of the hydrogen concentration by ∼35%. Further removal of hydrogen seems to be involved in the breaking of Ga-H bonds that passivate the nitrogen vacancies. An EPA process with high voltage breaks not only Mg-H bonds that generate hole carriers but also Ga-H bonds that generate electron carriers, thus causing compensation that impedes the practical increase of hole concentration, regardless of the drastic removal of hydrogen atoms. A decrease in hydrogen concentration affects the current-voltage characteristics, reducing the reverse current by about one order and altering the forward current behavior in the low voltage region.

  17. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  18. Covalent Bonding in Actinide Sandwich Molecules

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Covalent Bonding in Actinide Sandwich Molecules Print Glenn Seaborg was one of the first scientists to recognize that differences in the degree of covalent bonding in lanthanide and actinide compounds could have profound consequences for their unique chemical reactivity and physical properties. Now, researchers working at ALS Beamline 11.0.2 have found evidence for unexpected bonding interactions in two organometallic actinide "sandwich" complexes that have been lightning rods in

  19. Covalent Bonding in Actinide Sandwich Molecules

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Covalent Bonding in Actinide Sandwich Molecules Print Glenn Seaborg was one of the first scientists to recognize that differences in the degree of covalent bonding in lanthanide and actinide compounds could have profound consequences for their unique chemical reactivity and physical properties. Now, researchers working at ALS Beamline 11.0.2 have found evidence for unexpected bonding interactions in two organometallic actinide "sandwich" complexes that have been lightning rods in

  20. Covalent Bonding in Actinide Sandwich Molecules

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Covalent Bonding in Actinide Sandwich Molecules Print Glenn Seaborg was one of the first scientists to recognize that differences in the degree of covalent bonding in lanthanide and actinide compounds could have profound consequences for their unique chemical reactivity and physical properties. Now, researchers working at ALS Beamline 11.0.2 have found evidence for unexpected bonding interactions in two organometallic actinide "sandwich" complexes that have been lightning rods in

  1. Covalent Bonding in Actinide Sandwich Molecules

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Covalent Bonding in Actinide Sandwich Molecules Print Glenn Seaborg was one of the first scientists to recognize that differences in the degree of covalent bonding in lanthanide and actinide compounds could have profound consequences for their unique chemical reactivity and physical properties. Now, researchers working at ALS Beamline 11.0.2 have found evidence for unexpected bonding interactions in two organometallic actinide "sandwich" complexes that have been lightning rods in

  2. Covalent Bonding in Actinide Sandwich Molecules

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Covalent Bonding in Actinide Sandwich Molecules Print Glenn Seaborg was one of the first scientists to recognize that differences in the degree of covalent bonding in lanthanide and actinide compounds could have profound consequences for their unique chemical reactivity and physical properties. Now, researchers working at ALS Beamline 11.0.2 have found evidence for unexpected bonding interactions in two organometallic actinide "sandwich" complexes that have been lightning rods in

  3. Covalent Bonding in Actinide Sandwich Molecules

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Covalent Bonding in Actinide Sandwich Molecules Print Glenn Seaborg was one of the first scientists to recognize that differences in the degree of covalent bonding in lanthanide and actinide compounds could have profound consequences for their unique chemical reactivity and physical properties. Now, researchers working at ALS Beamline 11.0.2 have found evidence for unexpected bonding interactions in two organometallic actinide "sandwich" complexes that have been lightning rods in

  4. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  5. Covalent Bonding in Actinide Sandwich Molecules

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    bonds, are vital as industrial or bioinorganic catalysts and as precursors for nanomaterial synthesis. The work at the ALS also provides conclusive evidence for a new form of...

  6. Covalent Bonding in Actinide Sandwich Molecules

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Beamline 11.0.2 have found evidence for unexpected bonding interactions in two organometallic actinide "sandwich" complexes that have been lightning rods in discussions of...

  7. Tire with outer groove containing bonded tube

    DOE Patents [OSTI]

    Welter, Carolin Anna; Chandra, Dinesh; Benedict, Robert Leon

    2016-02-16

    The invention relates generally to a pneumatic rubber tire which contains an outer, annular, circular groove which contains a flexible tube bonded to the walls of the groove.

  8. Metal-bonded graphite foam composites

    DOE Patents [OSTI]

    Menchhofer, Paul A; Klett, James W

    2015-04-28

    A metal-bonded graphite foam composite includes a ductile metal continuous phase and a dispersed phase that includes graphite foam particles.

  9. Green Infrastructure Bonds | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    allowing the Department of Business, Economic Development, and Tourism to issue Green Infrastructure Bonds to secture low-cost financing for clean energy installations,...

  10. Hydrogen Adsorption Induces Interlayer Carbon Bond Formation...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hydrogen Adsorption Induces Interlayer Carbon Bond Formation in Supported Few-Layer Graphene Friday, February 28, 2014 Among the allotropes of carbon, diamond has some of the most...

  11. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  12. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  13. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  14. Qualified Energy Conservation Bonds (QECBs) & New Clean Renewable Energy Bonds (New CREBs)

    Broader source: Energy.gov [DOE]

    Provides a presentation overview of qualified energy conservation bond and new clean renewable energy bonds, including characteristics, mechanics, allocated volume, and other information. Author: U.S. Department of Energy

  15. Identification of products containing {single_bond}COOH, {single_bond}OH, and {single_bond}C{double_bond}O in atmospheric oxidation of hydrocarbons

    SciTech Connect (OSTI)

    Yu, J.; Flagan, R.C.; Seinfeld, J.H.

    1998-08-15

    Atmospheric oxidation of hydrocarbons by hydroxyl radicals and ozone leads to products containing {single_bond}COOH, {single_bond}OH, and {single_bond}C{double_bond}O functional groups. The high polarity of such compounds precludes direct GC-MS analysis. In addition, many such compounds often exist in a single sample at trace levels. An analytical method has been developed to identify compounds containing one or more functional groups of carbonyl, carboxy, and hydroxy in atmospheric samples. In the method, {single_bond}C{double_bond}O groups are derivatized using O-(2,3,4,5,6-pentafluorobenzyl) hydroxy amine(PFBHA), and {single_bond}COOH and {single_bond}OH groups are derivatized using a silylation reagent N,O-bis(trimethylsilyl)-trifluoroacetamide (BSTFA). The derivatives are easily resolved by a GC column. The chemical ionization mass spectra of these derivatives exhibit several pseudomolecular ions, allowing unambiguous determination of molecular weights. Functional group identification is accomplished by monitoring the ions in the electron ionization mass spectra that are characteristic of each functional group derivative: m/z 181 for carbonyl and m/z 73 and 75 for carboxyl and hydroxy groups. The method is used to identify products in laboratory studies of ozone oxidation of {alpha}-pinene and {Delta}{sup 3}-carene.

  16. SOLID STATE BONDING OF THORIUM WITH ALUMINUM

    DOE Patents [OSTI]

    Storchhelm, S.

    1959-12-01

    A method is described for bonding thorium and aluminum by placing clean surfaces of thorium and aluminum in contact with each other and hot pressing the metals together in a protective atmosphere at a temperature of about 375 to 575 deg C and at a pressure of at least 10 tsi to effect a bond.

  17. Hydrogen bond dynamics in bulk alcohols

    SciTech Connect (OSTI)

    Shinokita, Keisuke; Cunha, Ana V.; Jansen, Thomas L. C.; Pshenichnikov, Maxim S.

    2015-06-07

    Hydrogen-bonded liquids play a significant role in numerous chemical and biological phenomena. In the past decade, impressive developments in multidimensional vibrational spectroscopy and combined molecular dynamicsquantum mechanical simulation have established many intriguing features of hydrogen bond dynamics in one of the fundamental solvents in nature, water. The next class of a hydrogen-bonded liquidalcoholshas attracted much less attention. This is surprising given such important differences between water and alcohols as the imbalance between the number of hydrogen bonds, each molecule can accept (two) and donate (one) and the very presence of the hydrophobic group in alcohols. Here, we use polarization-resolved pump-probe and 2D infrared spectroscopy supported by extensive theoretical modeling to investigate hydrogen bond dynamics in methanol, ethanol, and isopropanol employing the OH stretching mode as a reporter. The sub-ps dynamics in alcohols are similar to those in water as they are determined by similar librational and hydrogen-bond stretch motions. However, lower density of hydrogen bond acceptors and donors in alcohols leads to the appearance of slow diffusion-controlled hydrogen bond exchange dynamics, which are essentially absent in water. We anticipate that the findings herein would have a potential impact on fundamental chemistry and biology as many processes in nature involve the interplay of hydrophobic and hydrophilic groups.

  18. 1 mil gold bond wire study.

    SciTech Connect (OSTI)

    Huff, Johnathon; McLean, Michael B.; Jenkins, Mark W.; Rutherford, Brian Milne

    2013-05-01

    In microcircuit fabrication, the diameter and length of a bond wire have been shown to both affect the current versus fusing time ratio of a bond wire as well as the gap length of the fused wire. This study investigated the impact of current level on the time-to-open and gap length of 1 mil by 60 mil gold bond wires. During the experiments, constant current was provided for a control set of bond wires for 250ms, 410ms and until the wire fused; non-destructively pull-tested wires for 250ms; and notched wires. The key findings were that as the current increases, the gap length increases and 73% of the bond wires will fuse at 1.8A, and 100% of the wires fuse at 1.9A within 60ms. Due to the limited scope of experiments and limited data analyzed, further investigation is encouraged to confirm these observations.

  19. US SoAtl GA Site Consumption

    U.S. Energy Information Administration (EIA) Indexed Site

    GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per

  20. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  1. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs...

    Office of Scientific and Technical Information (OSTI)

    irradiated AlGaNGaN HEMTs This content will become publicly available on August 26, 2016 Title: Degradation mechanisms of 2 MeV proton irradiated AlGaNGaN HEMTs Authors: ...

  2. Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN

    Office of Scientific and Technical Information (OSTI)

    HEMTs. (Conference) | SciTech Connect Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Citation Details In-Document Search Title: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Abstract not provided. Authors: Biedermann, Laura Butler ; Kaplar, Robert James ; Marinella, Matthew ; Zavadil, Kevin Robert ; Atcitty, Stanley ; Sun, Min ; Palacios, Tomas Publication Date: 2012-10-01 OSTI Identifier: 1111316 Report Number(s):

  3. Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN

    Office of Scientific and Technical Information (OSTI)

    HEMTs. (Conference) | SciTech Connect Conference: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Citation Details In-Document Search Title: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Abstract not provided. Authors: DasGupta, Sandeepan ; Biedermann, Laura Butler ; Kaplar, Robert ; Marinella, Matthew ; Zavadil, Kevin Robert ; Atcitty, Stanley ; Sun, Min ; Palacios, Tomas Publication Date: 2013-02-01 OSTI Identifier:

  4. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  5. Atomically Bonded Transparent Superhydrophobic Coatings

    SciTech Connect (OSTI)

    Aytug, Tolga

    2015-08-01

    Maintaining clarity and avoiding the accumulation of water and dirt on optically transparent surfaces such as US military vehicle windshields, viewports, periscope optical head windows, and electronic equipment cover glasses are critical to providing a high level of visibility, improved survivability, and much-needed safety for warfighters in the field. Through a combination of physical vapor deposition techniques and the exploitation of metastable phase separation in low-alkali borosilicate, a novel technology was developed for the fabrication of optically transparent, porous nanostructured silica thin film coatings that are strongly bonded to glass platforms. The nanotextured films, initially structurally superhydrophilic, exhibit superior superhydrophobicity, hence antisoiling ability, following a simple but robust modification in surface chemistry. The surfaces yield water droplet contact angles as high as 172°. Moreover, the nanostructured nature of these coatings provides increased light scattering in the UV regime and reduced reflectivity (i.e., enhanced transmission) over a broad range of the visible spectrum. In addition to these functionalities, the coatings exhibit superior mechanical resistance to abrasion and are thermally stable to temperatures approaching 500°C. The overall process technology relies on industry standard equipment and inherently scalable manufacturing processes and demands only nontoxic, naturally abundant, and inexpensive base materials. Such coatings, applied to the optical components of current and future combat equipment and military vehicles will provide a significant strategic advantage for warfighters. The inherent self-cleaning properties of such superhydrophobic coatings will also mitigate biofouling of optical windows exposed to high-humidity conditions and can help decrease repair/replacement costs, reduce maintenance, and increase readiness by limiting equipment downtime.

  6. Boosting investor yields through bond insurance

    SciTech Connect (OSTI)

    Mosbacher, M.L.; Burkhardt, D.A.

    1993-02-01

    The market for utility securities generally tends to be fairly static. Innovative financing techniques are rarely used because of the marketability of utility securities stemming from the companies' generally strong financial credit and the monopoly markets most utilities serve. To many people, utility securities are considered the pillars of the financial world, and innovation is not needed. Further, plain vanilla utility issues are easily understood by investors, as well as by regulators and customers. Over the past several years, however, a new utility bond product has crept into the world of utility securities - insured secondary utility bonds. These insured bonds may possibly be used as an alternative financing technique for newly issued debt. Individual investors often tend to rely on insurance as a tool for reducing credit risk and are willing to take the lower yields as a tradeoff. Insured utility bonds are created by brokerage firms through the acqusition of a portion of an outstanding utility bond issue and subsequent solicitation of the insurance companies for bids. The insurance company then agrees to insure that portion of the issue until maturity for a fee, and the brokerage firm sells those bonds to their customers as a AAA-insured bond. Issuers are encouraged to explore the retail market as a financing alternative. They may find a most cost-effective means of raising capital.

  7. Process Of Bonding Copper And Tungsten

    DOE Patents [OSTI]

    Slattery, Kevin T.; Driemeyer, Daniel E.; Davis, John W.

    2000-07-18

    Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by sintering a stack of individual copper and tungsten powder blend layers having progressively higher copper content/tungsten content, by volume, ratio values in successive powder blend layers in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.

  8. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  9. Density of electronic states and dispersion of optical functions of defect chalcopyrite CdGa{sub 2}X{sub 4} (X = S, Se): DFT study

    SciTech Connect (OSTI)

    Reshak, A.H.; Khan, Saleem Ayaz

    2013-11-15

    Graphical abstract: - Highlights: FPLAPW method is used for calculating the electronic and optical properties of CdGa{sub 2}X{sub 4}. Electronic and optical properties were calculated using LDA, GGA, EVGGA and mBJ. Band gap conformed that CdGa{sub 2}X{sub 4} are semiconductors fit for UV and visible light. The ECD shows that change in the bond length and bond nature affect the band gap. The dielectric tensor components and its derivatives show considerable anisotropy. - Abstract: A density functional theory (DFT) based on full potential linear augmented plane wave (FPLAPW) was used for calculating the electronic structure, charge density and optical properties of CdGa{sub 2}X{sub 4} (X = S, Se) compounds. Local density approximation (LDA), generalized gradient approximation (GGA), Engle Vasko generalized gradient approximation (EVGGA) and recently modified BeckeJohnson (mBJ) were applied to calculate the band structure, total and partial density of states. The investigation of band structures and density of states of CdGa{sub 2}X{sub 4} (X = S, Se) elucidate that mBJ potential show close agreement to the experimental results. The mBJ potential was selected for further explanation of optical properties of CdGa{sub 2}X{sub 4} (X = S, Se). The study of electronic charge density contours shows that change in the bond lengths and bond nature affect the band gap of the compounds. The two non-zero dielectric tensor components and its derivatives show considerable anisotropy between the perpendicular and parallel components. The present work provide accurate information about the combination (hybridization) of orbital, formation of bands and dispersion of non-zero tensor components of CdGa{sub 2}X{sub 4} (X = S, Se)

  10. A hole modulator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2015-02-09

    The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ?332?meV to ?294?meV at 80?A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

  11. A Surprising Path for Proton Transfer Without Hydrogen Bonds

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Surprising Path for Proton Transfer Without Hydrogen Bonds Print Hydrogen bonds are found everywhere in chemistry and biology and are critical in DNA and RNA. A hydrogen bond...

  12. A Surprising Path for Proton Transfer Without Hydrogen Bonds

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Surprising Path for Proton Transfer Without Hydrogen Bonds A Surprising Path for Proton Transfer Without Hydrogen Bonds Print Wednesday, 25 July 2012 00:00 Hydrogen bonds are...

  13. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

    2014-05-05

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  14. Producing microchannels using graduated diffusion bonding of...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of precision machined foils or sheets (laminates) to make a micro-channel reactor A novel multi-step process for the diffusion bonding of laminates National Energy Technology...

  15. Local Option- Energy Efficiency Project Bonds

    Broader source: Energy.gov [DOE]

    On March 2015, the Arkansas legislature passed SB 896 or the “Local Government Energy Efficiency Project Bond Act” which provides enabling legislation for a municipality or a county to issue energy...

  16. Nearly Equivalent Inter- and Intramolecular Hydrogen Bonding...

    Office of Scientific and Technical Information (OSTI)

    Hydrogen Bonding in 1,3,5-Triamino-2,4,6-trinitrobenzene at High Pressure Citation Details In-Document Search Title: Nearly Equivalent Inter- and Intramolecular Hydrogen ...

  17. Reversible Sigma C-C Bond Formation

    Office of Scientific and Technical Information (OSTI)

    ... is shown by the Newman projection down the C(28)C(28') bond, Scheme 2, left-hand drawing. ... The Newman projection of another rotomer of C2 symmetry is shown in the right-hand drawing...

  18. Method for forming or bonding a liner

    DOE Patents [OSTI]

    Prevender, Thomas S.

    1980-01-01

    A process and means for forming or bonding a liner to a shell or element wherein the liner is filled with or immersed in water and a portion of the water is frozen.

  19. Cement Bond Log | Open Energy Information

    Open Energy Info (EERE)

    casing and cement and between cement and borehole wall. Most cement-bond logs are a measurement only of the amplitude of the early arriving casing signal. Although a small...

  20. Stability of S and Se induced reconstructions on GaP(001)(21) surface

    SciTech Connect (OSTI)

    Li , D. F.; Guo, Zhi C.; Xiao, Hai Yan; Zu, Xiaotao T.; Gao, Fei

    2010-10-15

    The structural and electronic properties of S- and Se- passivated GaP(001)(21) surfaces were studied using first-principles simulations. Our calculations showed that the most stable structure consists of a single chalcogen atom (S or Se) in the first crystal layer, which is bonded to two Ga atoms of the second layer, and the third P layer replaced by chalcogen atoms, similar to the passivation of GaAs(001)(21) surface by chalcogen atoms. The structural parameters were determined and the surface band characters and the local density of states were also analyzed. The results showed that the preferable structure has no surface states in the bulk band gap, but the energy band gaps of the S- and Se-adsorbed GaP(001) surfaces are 1.83eV and 1.63eV, respectively. The passivation effects for the S- and Se-adsorbed surfaces are similar to each other.

  1. Neutron Compton Scattering as a Probe of Hydrogen Bonded (and...

    Office of Scientific and Technical Information (OSTI)

    Scattering as a Probe of Hydrogen Bonded (and other) Systems Citation Details In-Document Search Title: Neutron Compton Scattering as a Probe of Hydrogen Bonded (and other) ...

  2. Peer Exchange Call on Financing and Revenue: Bond Funding | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Peer Exchange Call on Financing and Revenue: Bond Funding Peer Exchange Call on Financing and Revenue: Bond Funding Better Buildings Neighborhood Program Peer Exchange Call on...

  3. Taking Advantage of Qualified Energy Conservation Bonds (QECBs...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Advantage of Qualified Energy Conservation Bonds (QECBs) Taking Advantage of Qualified Energy Conservation Bonds (QECBs) This webinar, held on Sept. 22, 2010, provides information ...

  4. Thermal Performance and Reliability of Bonded Interfaces | Department...

    Broader source: Energy.gov (indexed) [DOE]

    ...28narumanchi2011o.pdf More Documents & Publications Thermal Performance and Reliability of Bonded Interfaces Thermal Performance and Reliability of Bonded Interfaces Reliability

  5. FITCH RATES ENERGY NORTHWEST, WA'S ELECTRIC REV RFDG BONDS 'AA...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    debt (4.1 billion). KEY RATING DRIVERS BONNEVILLE'S OBLIGATION SECURES BONDS: The rating on the Energy Northwest bonds reflects the credit quality of Bonneville and its...

  6. Qualified Energy Conservation Bonds (QECBs) & New Clean Renewable...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Provides a presentation overview of qualified energy conservation bond and new clean renewable energy bonds, including characteristics, mechanics, allocated volume, and other ...

  7. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA February 8, 2012 EIS-0476: Final Environmental Impact ...

  8. Guidance for Energy Efficiency and Conservation Block Grant Grantees on Qualified Energy Conservation Bonds and New Clean Renewable Energy Bonds

    Broader source: Energy.gov [DOE]

    Guidance for Energy Efficiency and Conservation Block Grant Program grantees regarding Qualified Energy Conservation Bonds (QECBs) and New Clean Renewable Energy Bonds (New CREBs)

  9. Investigation of optoelectronic properties of cubic perovskite LaGaO{sub 3}

    SciTech Connect (OSTI)

    Babu, K. Ephraim Murali, N. Babu, K. Vijaya Shibeshi, Paulos Taddesse Veeraiah, V.

    2014-10-15

    The structural, electronic, bonding and optical properties of cubic perovskite LaGaO{sub 3} have been calculated using the full-potential linearized augmented plane wave (FP-LAPW) method in the density functional theory (DFT) as embodied in WIEN2k code. The modified Becke-Johnson (mBJ) potential is applied for the calculation of electronic and optical properties. The calculated lattice constant is in good agreement with the experimental result. The predicted band structure shows an indirect (M-X) band gap of 4.22 eV. The bonding in the material is of mixed covalent and ionic nature. Optical properties like dielectric function, refractive index, reflectivity, conductivity and absorption coefficient are presented.

  10. Oxidation of ultrathin GaSe

    SciTech Connect (OSTI)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  11. Oxidation of ultrathin GaSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  12. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  13. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  14. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  15. Princeton Plasma Physics Lab - General Atomics (GA)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http:www.pppl.govnode1132

  16. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  17. Qualified Energy Conservation Bond State-by-State Summary Tables

    Broader source: Energy.gov [DOE]

    Provides a list of qualified energy conservation bond state summary tables. Author: Energy Programs Consortium

  18. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  19. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PDF icon 2015 BTO Peer Review Presentation - Development and Industrialization of InGaNGaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture More Documents & ...

  20. Process Of Bonding Copper And Tungsten

    DOE Patents [OSTI]

    Slattery, Kevin T.; Driemeyer, Daniel E.

    1999-11-23

    Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by thermal plasma spraying mixtures of copper powder and tungsten powder in a varied blending ratio such that the blending ratio of the copper powder and the tungsten powder that is fed to a plasma torch is intermittently adjusted to provide progressively higher copper content/tungsten content, by volume, ratio values in the interlayer in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.

  1. Epoxy bond and stop etch fabrication method

    DOE Patents [OSTI]

    Simmons, Jerry A.; Weckwerth, Mark V.; Baca, Wes E.

    2000-01-01

    A class of epoxy bond and stop etch (EBASE) microelectronic fabrication techniques is disclosed. The essence of such techniques is to grow circuit components on top of a stop etch layer grown on a first substrate. The first substrate and a host substrate are then bonded together so that the circuit components are attached to the host substrate by the bonding agent. The first substrate is then removed, e.g., by a chemical or physical etching process to which the stop etch layer is resistant. EBASE fabrication methods allow access to regions of a device structure which are usually blocked by the presence of a substrate, and are of particular utility in the fabrication of ultrafast electronic and optoelectronic devices and circuits.

  2. Bonded ultrasonic transducer and method for making

    DOE Patents [OSTI]

    Dixon, Raymond D.; Roe, Lawrence H.; Migliori, Albert

    1995-01-01

    An ultrasonic transducer is formed as a diffusion bonded assembly of piezoelectric crystal, backing material, and, optionally, a ceramic wear surface. The mating surfaces of each component are silver films that are diffusion bonded together under the application of pressure and heat. Each mating surface may also be coated with a reactive metal, such as hafnium, to increase the adhesion of the silver films to the component surfaces. Only thin silver films are deposited, e.g., a thickness of about 0.00635 mm, to form a substantially non-compliant bond between surfaces. The resulting transducer assembly is substantially free of self-resonances over normal operating ranges for taking resonant ultrasound measurements.

  3. Bonded ultrasonic transducer and method for making

    DOE Patents [OSTI]

    Dixon, R.D.; Roe, L.H.; Migliori, A.

    1995-11-14

    An ultrasonic transducer is formed as a diffusion bonded assembly of piezoelectric crystal, backing material, and, optionally, a ceramic wear surface. The mating surfaces of each component are silver films that are diffusion bonded together under the application of pressure and heat. Each mating surface may also be coated with a reactive metal, such as hafnium, to increase the adhesion of the silver films to the component surfaces. Only thin silver films are deposited, e.g., a thickness of about 0.00635 mm, to form a substantially non-compliant bond between surfaces. The resulting transducer assembly is substantially free of self-resonances over normal operating ranges for taking resonant ultrasound measurements. 12 figs.

  4. Mutual passivation of group IV donors and isovalent nitrogen in diluted GaN{sub x}As{sub 1-x} alloys

    SciTech Connect (OSTI)

    Yu, K.M.; Wu, J.; Walukiewicz, W.; Shan, W.; Beeman, J.; Mars, D.E.; Chamberlin, D.R.; Scarpulla, M.A.; Dubon, O.D.; Ridgway, M.C.; Geisz, J.F.

    2003-07-23

    We demonstrate the mutual passivation of electrically active group IV donors and isovalent N atoms in the GaN{sub x}As{sub 1-x} alloy system. This phenomenon occurs through the formation of a donor-nitrogen bond in the nearest neighbor IV{sub Ga}-N{sub As} pairs. In Si doped GaInN{sub 0.017}As{sub 0.983} the electron concentration starts to decrease rapidly at an annealing temperature of 700 C from {approx} 3 x 10{sup 19}cm{sup -3} in the as-grown state to less than 10{sup 16}cm{sup -3} after an annealing at 900 C for 10 s. At the same time annealing of this sample at 950 C increases the gap by about 35 meV, corresponding to a reduction of the concentration of the active N atoms by an amount very close to the total Si concentration. We also show that the formation of Si{sub Ga}-N{sub As} pairs is controlled by the diffusion of Si via Ga vacancies to the nearest N{sub As} site. The general nature of this mutual passivation effect is confirmed by our study of Ge doped GaN{sub x}As{sub 1-x} layers formed by N and Ge co-implantation in GaAs followed by pulsed laser melting.

  5. Synthesis, Crystal and Electronic Structures of the Pnictides AE3TrPn3 (AE = Sr, Ba; Tr = Al, Ga; Pn = P, As)

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Stoyko, Stanislav; Voss, Leonard; He, Hua; Bobev, Svilen

    2015-09-24

    New ternary arsenides AE3TrAs3 (AE = Sr, Ba; Tr = Al, Ga) and their phosphide analogs Sr3GaP3 and Ba3AlP3 have been prepared by reactions of the respective elements at high temperatures. Single-crystal X-ray diffraction studies reveal that Sr3AlAs3 and Ba3AlAs3 adopt the Ba3AlSb3-type structure (Pearson symbol oC56, space group Cmce, Z = 8). This structure is also realized for Sr3GaP3 and Ba3AlP3. Likewise, the compounds Sr3GaAs3 and Ba3GaAs3 crystallize with the Ba3GaSb3-type structure (Pearson symbol oP56, space group Pnma, Z = 8). Both structures are made up of isolated pairs of edge-shared AlPn4 and GaPn4 tetrahedra (Pn = pnictogen, i.e.,more » P or As), separated by the alkaline-earth Sr2+ and Ba2+ cations. In both cases, there are no homoatomic bonds, hence, regardless of the slightly different atomic arrangements, both structures can be rationalized as valence-precise [AE2+]3[Tr3+][Pn3-]3, or rather [AE2+]6[Tr2Pn6]12-, i.e., as Zintl phases.« less

  6. Fundamental aspects of recoupled pair bonds. II. Recoupled pair bond dyads in carbon and sulfur difluoride

    SciTech Connect (OSTI)

    Dunning, Thom H. Takeshita, Tyler Y.; Xu, Lu T.

    2015-01-21

    Formation of a bond between a second ligand and a molecule with a recoupled pair bond results in a recoupled pair bond dyad. We examine the recoupled pair bond dyads in the a{sup 3}B{sub 1} states of CF{sub 2} and SF{sub 2}, which are formed by the addition of a fluorine atom to the a{sup 4}?{sup ?} states of CF and SF, both of which possess recoupled pair bonds. The two dyads are very different. In SF{sub 2}, the second FSF bond is very strong (D{sub e} = 106.3 kcal/mol), the bond length is much shorter than that in the SF(a{sup 4}?{sup ?}) state (1.666 versus 1.882 ), and the three atoms are nearly collinear (?{sub e} = 162.7) with only a small barrier to linearity (0.4 kcal/mol). In CF{sub 2}, the second FCF bond is also very strong (D{sub e} = 149.5 kcal/mol), but the bond is only slightly shorter than that in the CF(a{sup 4}?{sup ?}) state (1.314 versus 1.327 ), and the molecule is strongly bent (?{sub e} = 119.0) with an 80.5 kcal/mol barrier to linearity. The a{sup 3}B{sub 1} states of CF{sub 2} and SF{sub 2} illustrate the fundamental differences between recoupled pair bond dyads formed from 2s and 3p lone pairs.

  7. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect (OSTI)

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  8. Phosphate-bonded calcium aluminate cements

    DOE Patents [OSTI]

    Sugama, T.

    1993-09-21

    A method is described for making a rapid-setting phosphate-bonded cementitious material. A powdered aluminous cement is mixed with an aqueous solution of ammonium phosphate. The mixture is allowed to set to form an amorphous cementitious material which also may be hydrothermally treated at a temperature of from about 120 C to about 300 C to form a crystal-containing phosphate-bonded material. Also described are the cementitious products of this method and the cement composition which includes aluminous cement and ammonium polyphosphate. 10 figures.

  9. Phosphate-bonded calcium aluminate cements

    DOE Patents [OSTI]

    Sugama, Toshifumi

    1993-01-01

    A method is described for making a rapid-setting phosphate-bonded cementitious material. A powdered aluminous cement is mixed with an aqueous solution of ammonium phosphate. The mixture is allowed to set to form an amorphous cementitious material which also may be hydrothermally treated at a temperature of from about 120.degree. C. to about 300.degree. C. to form a crystal-containing phosphate-bonded material. Also described are the cementitious products of this method and the cement composition which includes aluminous cement and ammonium polyphosphate.

  10. Adhesive bonding using variable frequency microwave energy

    DOE Patents [OSTI]

    Lauf, R.J.; McMillan, A.D.; Paulauskas, F.L.; Fathi, Z.; Wei, J.

    1998-08-25

    Methods of facilitating the adhesive bonding of various components with variable frequency microwave energy are disclosed. The time required to cure a polymeric adhesive is decreased by placing components to be bonded via the adhesive in a microwave heating apparatus having a multimode cavity and irradiated with microwaves of varying frequencies. Methods of uniformly heating various articles having conductive fibers disposed therein are provided. Microwave energy may be selectively oriented to enter an edge portion of an article having conductive fibers therein. An edge portion of an article having conductive fibers therein may be selectively shielded from microwave energy. 26 figs.

  11. Adhesive bonding using variable frequency microwave energy

    DOE Patents [OSTI]

    Lauf, R.J.; McMillan, A.D.; Paulauskas, F.L.; Fathi, Z.; Wei, J.

    1998-09-08

    Methods of facilitating the adhesive bonding of various components with variable frequency microwave energy are disclosed. The time required to cure a polymeric adhesive is decreased by placing components to be bonded via the adhesive in a microwave heating apparatus having a multimode cavity and irradiated with microwaves of varying frequencies. Methods of uniformly heating various articles having conductive fibers disposed therein are provided. Microwave energy may be selectively oriented to enter an edge portion of an article having conductive fibers therein. An edge portion of an article having conductive fibers therein may be selectively shielded from microwave energy. 26 figs.

  12. Adhesive bonding using variable frequency microwave energy

    DOE Patents [OSTI]

    Lauf, Robert J.; McMillan, April D.; Paulauskas, Felix L.; Fathi, Zakaryae; Wei, Jianghua

    1998-01-01

    Methods of facilitating the adhesive bonding of various components with variable frequency microwave energy are disclosed. The time required to cure a polymeric adhesive is decreased by placing components to be bonded via the adhesive in a microwave heating apparatus having a multimode cavity and irradiated with microwaves of varying frequencies. Methods of uniformly heating various articles having conductive fibers disposed therein are provided. Microwave energy may be selectively oriented to enter an edge portion of an article having conductive fibers therein. An edge portion of an article having conductive fibers therein may be selectively shielded from microwave energy.

  13. Bonded Radii and the Contraction of the Electron Density of the Oxygen Atom by Bonded Interactions

    SciTech Connect (OSTI)

    Gibbs, Gerald V.; Ross, Nancy L.; Cox, David F.; Rosso, Kevin M.; Iversen, Bo B.; Spackman, M. A.

    2013-02-21

    The bonded radii for more than 550 bonded pairs of atoms, comprising more than 50 crystals, determined from experimental and theoretical electron density distributions, are compared with the effective ionic, ri(M), and crystal radii, rc(M), for metal atoms, M, bonded to O atoms. At odds with the fixed ionic radius of 1.40 , assumed for the O atom in the compilation of the ionic radii, the bonded radius for the atom, rb(O), is not fixed but displays a relatively wide range of values as the O atom is progressively polarized by the M-O bonded interactions: as such, rb(O) decreases systematically from 1.40 (the Pauling radius of the oxide anion) as bond lengths decrease when bonded to an electropositive atom like sodium, to 0.64 (Braggs atomic radius of the O atom) when bonded to an electronegative atom like nitrogen. Both rb(M) and rb(O) increase in tandum with the increasing coordination number of the M atom. The bonded radii of the M atoms are highly correlated with both ri(M) and rc(M), but they both depart systematically from rb(M) and become smaller as the electronegativity of the M atom increases and the M-O bond length decreases. The well-developed correlations between both sets of radii and rb(M) testifies to the relative precision of both sets of radii and the fact that both sets are highly correlated the M-O bond 1 lengths. On the other hand, the progressive departure of rb(O) from the fixed ionic radius of the O atom with the increasing electronegativity of the bonded M atom indicates that any compilation of sets of ionic radii, assuming that the radius for the oxygen atom is fixed in value, is problematical and impacts on the accuracy of the resulting sets of ionic and crystal radii thus compiled. The assumption of a fixed O atom radius not only results in a negative ionic radii for several atoms, but it also results in values of rb(M) that are much as ~ 0.6 larger than the ri(M) and rc(M) values, respectively, particularly for the more electronegative M atoms. On the other hand, the ionic radii are in closer agreement with rb(M) for the more electropositive atoms. Notwithstanding that ionic radii are typically smaller than bonded radii, particularly for the more electronegative atoms, they have been used with considerable success in understanding and rationalizing problems and properties in crystal chemistry primarily because both ionic and crystal radii are highly correlated on a one-to-one basis with both the bonded radii and the associated M-O bond lengths. The lack of agreement between the effective ionic and crystal radii and the bonded radii for the more shared bonded interactions is ascribed to the progressive increase in the polarization of the O atom by the bonded atoms with a concomitant decrease in its radius, a factor that was neglected in the compilation of ionic and crystal radii for fluorides, oxides, sulfides and nitrides. This accounts for ionic radii for these materials being smaller than the bonded radii for the more electronegative atoms.

  14. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  15. Thermally stable, plastic-bonded explosives

    DOE Patents [OSTI]

    Benziger, Theodore M.

    1979-01-01

    By use of an appropriate thermoplastic rubber as the binder, the thermal stability and thermal stress characteristics of plastic-bonded explosives may be greatly improved. In particular, an HMX-based explosive composition using an oil-extended styrene-ethylenebutylene-styrene block copolymer as the binder exhibits high explosive energy and thermal stability and good handling safety and physical properties.

  16. METHOD AND ALLOY FOR BONDING TO ZIRCONIUM

    DOE Patents [OSTI]

    McCuaig, F.D.; Misch, R.D.

    1960-04-19

    A brazing alloy can be used for bonding zirconium and its alloys to other metals, ceramics, and cermets, and consists of 6 to 9 wt.% Ni, 6 to 9 wn~.% Cr, Mo, or W, 0 to 7.5 wt.% Fe, and the balance Zr.

  17. Non-bonded piezoelectric ultrasonic transducer

    DOE Patents [OSTI]

    Eoff, James M.

    1985-01-01

    A mechanically assembled non-bonded ultrasonic transducer includes a substrate, a piezoelectric film, a wetting agent, a thin metal electrode, and a lens held in intimate contact by a mechanical clamp. No epoxy or glue is used in the assembly of this device.

  18. Fluorinated diamond bonded in fluorocarbon resin

    DOE Patents [OSTI]

    Taylor, Gene W.

    1982-01-01

    By fluorinating diamond grit, the grit may be readily bonded into a fluorocarbon resin matrix. The matrix is formed by simple hot pressing techniques. Diamond grinding wheels may advantageously be manufactured using such a matrix. Teflon fluorocarbon resins are particularly well suited for using in forming the matrix.

  19. GaP ring-like nanostructures on GaAs (100) with In{sub 0.15}Ga{sub 0.85}As compensation layers

    SciTech Connect (OSTI)

    Prongjit, Patchareewan Pankaow, Naraporn Boonpeng, Poonyasiri Thainoi, Supachok Panyakeow, Somsak Ratanathammaphan, Somchai

    2013-12-04

    We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In{sub 0.15}Ga{sub 0.85}As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In{sub 0.15}Ga{sub 0.85}As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In{sub 0.15}Ga{sub 0.85}As layer thickness.

  20. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  1. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  2. Photo-induced water oxidation at the aqueous GaN (101¯0) interface: Deprotonation kinetics of the first proton-coupled electron-transfer step

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ertem, Mehmed Z.; Kharche, Neerav; Batista, Victor S.; Hybertsen, Mark S.; Tully, John C.; Muckerman, James T.

    2015-03-12

    Photoeclectrochemical water splitting plays a key role in a promising path to the carbon-neutral generation of solar fuels. Wurzite GaN and its alloys (e.g., GaN/ZnO and InGaN) are demonstrated photocatalysts for water oxidation, and they can drive the overall water splitting reaction when coupled with co-catalysts for proton reduction. In the present work, we investigate the water oxidation mechanism on the prototypical GaN (101¯0) surface using a combined ab initio molecular dynamics and molecular cluster model approach taking into account the role of water dissociation and hydrogen bonding within the first solvation shell of the hydroxylated surface. The investigation ofmore » free-energy changes for the four proton-coupled electron-transfer (PCET) steps of the water oxidation mechanism shows that the first PCET step for the conversion of –Ga-OH to –Ga-O˙⁻ requires the highest energy input. We further examine the sequential PCETs, with the proton transfer (PT) following the electron transfer (ET), and find that photo-generated holes localize on surface –NH sites is thermodynamically more favorable than –OH sites. However, proton transfer from –OH sites with subsequent localization of holes on oxygen atoms is kinetically favored owing to hydrogen bonding interactions at the GaN (101¯0)–water interface. We find that the deprotonation of surface –OH sites is the limiting factor for the generation of reactive oxyl radical ion intermediates and consequently for water oxidation.« less

  3. Photo-induced water oxidation at the aqueous GaN (1010) interface: Deprotonation kinetics of the first proton-coupled electron-transfer step

    SciTech Connect (OSTI)

    Ertem, Mehmed Z.; Kharche, Neerav; Batista, Victor S.; Hybertsen, Mark S.; Tully, John C.; Muckerman, James T.

    2015-03-12

    Photoeclectrochemical water splitting plays a key role in a promising path to the carbon-neutral generation of solar fuels. Wurzite GaN and its alloys (e.g., GaN/ZnO and InGaN) are demonstrated photocatalysts for water oxidation, and they can drive the overall water splitting reaction when coupled with co-catalysts for proton reduction. In the present work, we investigate the water oxidation mechanism on the prototypical GaN (1010) surface using a combined ab initio molecular dynamics and molecular cluster model approach taking into account the role of water dissociation and hydrogen bonding within the first solvation shell of the hydroxylated surface. The investigation of free-energy changes for the four proton-coupled electron-transfer (PCET) steps of the water oxidation mechanism shows that the first PCET step for the conversion of Ga-OH to Ga-O?? requires the highest energy input. We further examine the sequential PCETs, with the proton transfer (PT) following the electron transfer (ET), and find that photo-generated holes localize on surface NH sites is thermodynamically more favorable than OH sites. However, proton transfer from OH sites with subsequent localization of holes on oxygen atoms is kinetically favored owing to hydrogen bonding interactions at the GaN (1010)water interface. We find that the deprotonation of surface OH sites is the limiting factor for the generation of reactive oxyl radical ion intermediates and consequently for water oxidation.

  4. Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy

    SciTech Connect (OSTI)

    Hosseini Vajargah, S.; Woo, S. Y.; Botton, G. A.; Ghanad-Tavakoli, S.; Kleiman, R. N.; Preston, J. S.

    2012-11-01

    The atomic-resolved reversal of the polarity across an antiphase boundary (APB) was observed in GaSb films grown on Si by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The investigation of the interface structure at the origin of the APB reveals that coalescence of two domains with Ga-prelayer and Sb-prelayer causes the sublattice reversal. The local strain and lattice rotation distributions of the APB, attributed to the discordant bonding length at the APB with the surrounding GaSb lattice, were further studied using the geometric phase analysis technique. The crystallographic characteristics of the APBs and their interaction with other planar defects were observed with HAADF-STEM. The quantitative agreement between experimental and simulated images confirms the observed polarities in the acquired HAADF-STEM data. The self-annihilation mechanism of the APBs is addressed based on the rotation induced by anti-site bonds and APBs' faceting.

  5. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  6. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  7. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  8. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect (OSTI)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  9. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  10. Article coated with flash bonded superhydrophobic particles

    DOE Patents [OSTI]

    Simpson, John T (Clinton, TN) [Clinton, TN; Blue, Craig A (Knoxville, TN) [Knoxville, TN; Kiggans, Jr., James O [Oak Ridge, TN

    2010-07-13

    A method of making article having a superhydrophobic surface includes: providing a solid body defining at least one surface; applying to the surface a plurality of diatomaceous earth particles and/or particles characterized by particle sizes ranging from at least 100 nm to about 10 .mu.m, the particles being further characterized by a plurality of nanopores, wherein at least some of the nanopores provide flow through porosity, the particles being further characterized by a plurality of spaced apart nanostructured features that include a contiguous, protrusive material; flash bonding the particles to the surface so that the particles are adherently bonded to the surface; and applying a hydrophobic coating layer to the surface and the particles so that the hydrophobic coating layer conforms to the nanostructured features.

  11. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmoreto higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.less

  12. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  13. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; Worschech, L.; Grutzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  14. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  15. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  16. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

    SciTech Connect (OSTI)

    Li, Yi; Liu, Bin E-mail: rzhang@nju.edu.cn; Zhang, Rong E-mail: rzhang@nju.edu.cn; Xie, Zili; Zhuang, Zhe; Dai, JiangPing; Tao, Tao; Zhi, Ting; Zhang, Guogang; Chen, Peng; Ren, Fangfang; Zhao, Hong; Zheng, Youdou

    2015-04-21

    Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620?nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%53% as compared to that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.

  17. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect (OSTI)

    Lekhal, K.; Damilano, B. De Mierry, P.; Venngus, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570600?nm) emitting In{sub x}Ga{sub 1?x}N/Al{sub y}Ga{sub 1?y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1?x}N QWs by the Al{sub y}Ga{sub 1?y}N layers, respectively.

  18. Reversible Sigma C-C Bond Formation Between Phenanthroline Ligands...

    Office of Scientific and Technical Information (OSTI)

    Reversible Sigma C-C Bond Formation Between Phenanthroline Ligands Activated by (C5Me5)2Yb Citation Details In-Document Search Title: Reversible Sigma C-C Bond Formation Between ...

  19. Pre-plated reactive diffusion-bonded battery electrode plaques

    DOE Patents [OSTI]

    Maskalick, Nicholas J.

    1984-01-01

    A high strength, metallic fiber battery plaque is made using reactive diffusion bonding techniques, where a substantial amount of the fibers are bonded together by an iron-nickel alloy.

  20. Vacuum fusion bonding of glass plates

    DOE Patents [OSTI]

    Swierkowski, Steve P.; Davidson, James C.; Balch, Joseph W.

    2001-01-01

    An improved apparatus and method for vacuum fusion bonding of large, patterned glass plates. One or both glass plates are patterned with etched features such as microstructure capillaries and a vacuum pumpout moat, with one plate having at least one hole therethrough for communication with a vacuum pumpout fixture. High accuracy alignment of the plates is accomplished by a temporary clamping fixture until the start of the fusion bonding heat cycle. A complete, void-free fusion bond of seamless, full-strength quality is obtained through the plates; because the glass is heated well into its softening point and because of a large, distributed force that is developed that presses the two plates together from the difference in pressure between the furnace ambient (high pressure) and the channeling and microstructures in the plates (low pressure) due to the vacuum drawn. The apparatus and method may be used to fabricate microcapillary arrays for chemical electrophoresis; for example, any apparatus using a network of microfluidic channels embedded between plates of glass or similar moderate melting point substrates with a gradual softening point curve, or for assembly of glass-based substrates onto larger substrates, such as in flat panel display systems.

  1. Vacuum fusion bonding of glass plates

    DOE Patents [OSTI]

    Swierkowski, Steve P.; Davidson, James C.; Balch, Joseph W.

    2000-01-01

    An improved apparatus and method for vacuum fusion bonding of large, patterned glass plates. One or both glass plates are patterned with etched features such as microstructure capillaries and a vacuum pumpout moat, with one plate having at least one hole therethrough for communication with a vacuum pumpout fixture. High accuracy alignment of the plates is accomplished by a temporary clamping fixture until the start of the fusion bonding heat cycle. A complete, void-free fusion bond of seamless, full-strength quality is obtained through the plates; because the glass is heated well into its softening point and because of a large, distributed force that is developed that presses the two plates together from the difference in pressure between the furnace ambient (high pressure) and the channeling and microstructures in the plates (low pressure) due to the vacuum drawn. The apparatus and method may be used to fabricate microcapillary arrays for chemical electrophoresis; for example, any apparatus using a network of microfluidic channels embedded between plates of glass or similar moderate melting point substrates with a gradual softening point curve, or for assembly of glass-based substrates onto larger substrates, such as in flat panel display systems.

  2. Thermal Modeling of A Friction Bonding Process

    SciTech Connect (OSTI)

    John Dixon; Douglas Burkes; Pavel Medvedev

    2007-10-01

    A COMSOL model capable of predicting temperature evolution during nuclear fuel fabrication is being developed at the Idaho National Laboratory (INL). Fuel plates are fabricated by friction bonding (FB) uranium-molybdenum (U-Mo) alloy foils positioned between two aluminum plates. The ability to predict temperature distribution during fabrication is imperative to ensure good quality bonding without inducing an undesirable chemical reaction between U-Mo and aluminum. A three-dimensional heat transfer model of the FB process implementing shallow pin penetration for cladding monolithic nuclear fuel foils is presented. Temperature distribution during the FB process as a function of fabrication parameters such as weld speed, tool load, and tool rotational frequency are predicted. Model assumptions, settings, and equations are described in relation to standard friction stir welding. Current experimental design for validation and calibration of the model is also demonstrated. Resulting experimental data reveal the accuracy in describing asymmetrical temperature distributions about the tool face. Temperature of the bonded plate drops beneath the pin and is higher on the advancing side than the retreating side of the tool.

  3. Microchannel cooling of face down bonded chips

    DOE Patents [OSTI]

    Bernhardt, A.F.

    1993-06-08

    Microchannel cooling is applied to flip-chip bonded integrated circuits, in a manner which maintains the advantages of flip-chip bonds, while overcoming the difficulties encountered in cooling the chips. The technique is suited to either multi chip integrated circuit boards in a plane, or to stacks of circuit boards in a three dimensional interconnect structure. Integrated circuit chips are mounted on a circuit board using flip-chip or control collapse bonds. A microchannel structure is essentially permanently coupled with the back of the chip. A coolant delivery manifold delivers coolant to the microchannel structure, and a seal consisting of a compressible elastomer is provided between the coolant delivery manifold and the microchannel structure. The integrated circuit chip and microchannel structure are connected together to form a replaceable integrated circuit module which can be easily decoupled from the coolant delivery manifold and the circuit board. The coolant supply manifolds may be disposed between the circuit boards in a stack and coupled to supplies of coolant through a side of the stack.

  4. Microchannel cooling of face down bonded chips

    DOE Patents [OSTI]

    Bernhardt, Anthony F.

    1993-01-01

    Microchannel cooling is applied to flip-chip bonded integrated circuits, in a manner which maintains the advantages of flip-chip bonds, while overcoming the difficulties encountered in cooling the chips. The technique is suited to either multichip integrated circuit boards in a plane, or to stacks of circuit boards in a three dimensional interconnect structure. Integrated circuit chips are mounted on a circuit board using flip-chip or control collapse bonds. A microchannel structure is essentially permanently coupled with the back of the chip. A coolant delivery manifold delivers coolant to the microchannel structure, and a seal consisting of a compressible elastomer is provided between the coolant delivery manifold and the microchannel structure. The integrated circuit chip and microchannel structure are connected together to form a replaceable integrated circuit module which can be easily decoupled from the coolant delivery manifold and the circuit board. The coolant supply manifolds may be disposed between the circuit boards in a stack and coupled to supplies of coolant through a side of the stack.

  5. Energetics of Hydrogen Bond Network Rearrangements in Liquid Water

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energetics of Hydrogen Bond Network Rearrangements in Liquid Water Energetics of Hydrogen Bond Network Rearrangements in Liquid Water Print Wednesday, 25 May 2005 00:00 The unique chemical and physical properties of liquid water are thought to result from the highly directional hydrogen bonding (H-bonding) network structure and its associated dynamics. However, despite intense experimental and theoretical scrutiny, a complete description of this structure has been elusive. Recently, with the

  6. A Surprising Path for Proton Transfer Without Hydrogen Bonds

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Surprising Path for Proton Transfer Without Hydrogen Bonds A Surprising Path for Proton Transfer Without Hydrogen Bonds Print Wednesday, 25 July 2012 00:00 Hydrogen bonds are found everywhere in chemistry and biology and are critical in DNA and RNA. A hydrogen bond results from the attractive dipolar interaction of a chemical group containing a hydrogen atom with a group containing an electronegative atom, such as nitrogen, oxygen, or fluorine, in the same or a different molecule. Conventional

  7. Qualified Energy Conservation Bonds: Updates from the Field

    Broader source: Energy.gov [DOE]

    This webinar, held on March 28, 2011, focuses on qualified energy conservation bond updates, including issuance trends and performance contracting.

  8. Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

    SciTech Connect (OSTI)

    Yang, Weiquan; Becker, Jacob; Liu, Shi; Kuo, Ying-Shen; Li, Jing-Jing; Zhang, Yong-Hang; Landini, Barbara; Campman, Ken

    2014-05-28

    This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In{sub 0.49}Ga{sub 0.51}P/GaAs/In{sub 0.49}Ga{sub 0.51}P double-heterostructure PN junction with an ultra-thin 300?nm thick GaAs absorber, combined with a 5??m thick Al{sub 0.52}In{sub 0.48}P layer with a textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF{sub 2}/ZnS anti-reflective coating demonstrated open-circuit voltages (V{sub oc}) up to 1.00?V, short-circuit current densities (J{sub sc}) up to 24.5?mA/cm{sup 2}, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated J{sub sc} and conversion efficiency of these devices are expected to reach 26.6?mA/cm{sup 2} and 20.7%, respectively.

  9. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgl Okur; Akdemir, Hande Gnay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  10. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M.; Giddings, A. D.; Prosa, T. J.; Larson, D. J.; Mano, T.

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  11. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  12. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  13. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  14. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  15. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  16. Low temperature thermoelastic and structural properties of LaGaO{sub 3} perovskite in the Pbnm phase

    SciTech Connect (OSTI)

    Knight, Kevin S.

    2012-10-15

    The thermoelastic and structural properties of LaGaO{sub 3} perovskite have been studied using high resolution neutron diffractometry at 158 temperatures between 11 K and 548 K. Data collected in 2 K intervals between 410 K and 430 K show no evidence for an intermediate phase between the low temperature phase in space group Pbnm and the high temperature phase in space group F3{sup Macron }2/n. From a simultaneous fit of the unit cell volume and the isochoric heat capacity, the phonon density of states in the Pbnm phase is shown to be approximated by a two-term Debye model, with characteristic temperatures 294(1) K and 831(1) K. Vibrational Debye temperatures, determined from fitting the temperature variation of the atomic displacement parameters, show the cations to be more associated with the lower characteristic temperature, whilst that for the anions, is closer to the higher characteristic temperature. Structural parameters are presented as the amplitudes of the seven symmetry-adapted basis-vectors of the aristotype phase, and a structural basis for the temperature-dependence of the bond lengths is outlined. The phase transition in both temperature and pressure arises when a non-bonded La-O distance approaches the La coordination sphere. - Graphical abstract: The weight fraction of the rhombohedral phase of LaGaO{sub 3} from the onset of the phase transition at 408 K to its completion at 430 K. Highlights: Black-Right-Pointing-Pointer Thermoelastic properties of LaGaO{sub 3} analyzed as a two-term Debye model. Black-Right-Pointing-Pointer Crystal structure and bonding analyzed in terms of symmetry-adapted basis-vectors. Black-Right-Pointing-Pointer Consistency between calorimetric and crystallographic measurements.

  17. Method for bonding a transmission line to a downhole tool

    DOE Patents [OSTI]

    Hall, David R.; Fox, Joe

    2007-11-06

    An apparatus for bonding a transmission line to the central bore of a downhole tool includes a pre-formed interface for bonding a transmission line to the inside diameter of a downhole tool. The pre-formed interface includes a first surface that substantially conforms to the outside contour of a transmission line and a second surface that substantially conforms to the inside diameter of a downhole tool. In another aspect of the invention, a method for bonding a transmission line to the inside diameter of a downhole tool includes positioning a transmission line near the inside wall of a downhole tool and placing a mold near the transmission line and the inside wall. The method further includes injecting a bonding material into the mold and curing the bonding material such that the bonding material bonds the transmission line to the inside wall.

  18. Bond selective chemistry beyond the adiabatic approximation

    SciTech Connect (OSTI)

    Butler, L.J.

    1993-12-01

    One of the most important challenges in chemistry is to develop predictive ability for the branching between energetically allowed chemical reaction pathways. Such predictive capability, coupled with a fundamental understanding of the important molecular interactions, is essential to the development and utilization of new fuels and the design of efficient combustion processes. Existing transition state and exact quantum theories successfully predict the branching between available product channels for systems in which each reaction coordinate can be adequately described by different paths along a single adiabatic potential energy surface. In particular, unimolecular dissociation following thermal, infrared multiphoton, or overtone excitation in the ground state yields a branching between energetically allowed product channels which can be successfully predicted by the application of statistical theories, i.e. the weakest bond breaks. (The predictions are particularly good for competing reactions in which when there is no saddle point along the reaction coordinates, as in simple bond fission reactions.) The predicted lack of bond selectivity results from the assumption of rapid internal vibrational energy redistribution and the implicit use of a single adiabatic Born-Oppenheimer potential energy surface for the reaction. However, the adiabatic approximation is not valid for the reaction of a wide variety of energetic materials and organic fuels; coupling between the electronic states of the reacting species play a a key role in determining the selectivity of the chemical reactions induced. The work described below investigated the central role played by coupling between electronic states in polyatomic molecules in determining the selective branching between energetically allowed fragmentation pathways in two key systems.

  19. Repairable chip bonding/interconnect process

    DOE Patents [OSTI]

    Bernhardt, A.F.; Contolini, R.J.; Malba, V.; Riddle, R.A.

    1997-08-05

    A repairable, chip-to-board interconnect process which addresses cost and testability issues in the multi-chip modules is disclosed. This process can be carried out using a chip-on-sacrificial-substrate technique, involving laser processing. This process avoids the curing/solvent evolution problems encountered in prior approaches, as well is resolving prior plating problems and the requirements for fillets. For repairable high speed chip-to-board connection, transmission lines can be formed on the sides of the chip from chip bond pads, ending in a gull wing at the bottom of the chip for subsequent solder. 10 figs.

  20. Repairable chip bonding/interconnect process

    DOE Patents [OSTI]

    Bernhardt, Anthony F.; Contolini, Robert J.; Malba, Vincent; Riddle, Robert A.

    1997-01-01

    A repairable, chip-to-board interconnect process which addresses cost and testability issues in the multi-chip modules. This process can be carried out using a chip-on-sacrificial-substrate technique, involving laser processing. This process avoids the curing/solvent evolution problems encountered in prior approaches, as well is resolving prior plating problems and the requirements for fillets. For repairable high speed chip-to-board connection, transmission lines can be formed on the sides of the chip from chip bond pads, ending in a gull wing at the bottom of the chip for subsequent solder.

  1. Printability Optimization For Fine Pitch Solder Bonding

    SciTech Connect (OSTI)

    Kwon, Sang-Hyun; Lee, Chang-Woo; Yoo, Sehoon

    2011-01-17

    Effect of metal mask and pad design on solder printability was evaluated by DOE in this study. The process parameters were stencil thickness, squeegee angle, squeegee speed, mask separating speed, and pad angle of PCB. The main process parameters for printability were stencil thickness and squeegee angle. The response surface showed that maximum printability of 1005 chip was achieved at the stencil thickness of 0.12 mm while the maximum printability of 0603 and 0402 chip was obtained at the stencil thickness of 0.05 mm. The bonding strength of the MLCC chips was also directly related with the printability.

  2. METHOD OF MAKING METAL BONDED CARBON BODIES

    DOE Patents [OSTI]

    Goeddel, W.V.; Simnad, M.T.

    1961-09-26

    A method of producing carbon bodies having high structural strength and low permeability is described. The method comprises mixing less than 10 wt.% of a diffusional bonding material selected from the group consisting of zirconium, niobium, molybdenum, titanium, nickel, chromium, silicon, and decomposable compounds thereof with finely divided particles of carbon or graphite. While being maintained at a mechanical pressure over 3,000 psi, the mixture is then heated uniformly to a temperature of 1500 deg C or higher, usually for less than one hour. The resulting carbon bodies have a low diffusion constant, high dimensional stability, and high mechanical strength.

  3. Special purpose revenue bonds: boon or bane

    SciTech Connect (OSTI)

    Taussig, R.A.

    1985-02-21

    Utilities are looking with increasing interest at the advantages offered by industrial development bonds (IDBs), a financing tool made available to investor-owned utilities through provision of federal law. IDBs are not without problems, however, particularly if regulatory agencies account for them improperly in rate cases. Regulatory agencies should allow returns based on the funds-used rather than the total-funds approach or the tariffs will not compensate investors adequately. The author examines both the risks to be avoided and the benefits when using IDBs.

  4. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

    SciTech Connect (OSTI)

    Ji, Hai-Ming; Liang, Baolai Simmonds, Paul J.; Juang, Bor-Chau; Yang, Tao; Young, Robert J.; Huffaker, Diana L.

    2015-03-09

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

  5. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  6. Methylthiol adsorption on GaAs(100)-(2 x 4) surface: Ab initio quantum-chemical analysis

    SciTech Connect (OSTI)

    Lebedev, M. V.

    2008-09-15

    Quantum-chemical cluster calculations within the density functional theory are performed to study the mechanism of adsorption of the methylthiol molecule CH{sub 3}SH on an As-As dimer on a GaAs (100) surface. It is shown that the adsorption of the molecule can proceed through dissociation of either the S-H or C-S bond. The lowest energy has the state of dissociative adsorption with the rupture of the C-S bond resulting in the formation of a methane molecule and sulfur adatom incorporated between surface arsenic atoms constituting the dimer. A somewhat higher energy has the state of dissociative adsorption with the rupture of the S-H bond. In this state the CH{sub 3}S-radical is adsorbed at an arsenic atom constituting dimer and the hydrogen atom is adsorbed at a gallium atom bonded to this arsenic atom. These two states provide chemical and electronic passivation of the semiconductor surface.

  7. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  8. Chemically bonded phospho-silicate ceramics

    DOE Patents [OSTI]

    Wagh, Arun S.; Jeong, Seung Y.; Lohan, Dirk; Elizabeth, Anne

    2003-01-01

    A chemically bonded phospho-silicate ceramic formed by chemically reacting a monovalent alkali metal phosphate (or ammonium hydrogen phosphate) and a sparsely soluble oxide, with a sparsely soluble silicate in an aqueous solution. The monovalent alkali metal phosphate (or ammonium hydrogen phosphate) and sparsely soluble oxide are both in powder form and combined in a stochiometric molar ratio range of (0.5-1.5):1 to form a binder powder. Similarly, the sparsely soluble silicate is also in powder form and mixed with the binder powder to form a mixture. Water is added to the mixture to form a slurry. The water comprises 50% by weight of the powder mixture in said slurry. The slurry is allowed to harden. The resulting chemically bonded phospho-silicate ceramic exhibits high flexural strength, high compression strength, low porosity and permeability to water, has a definable and bio-compatible chemical composition, and is readily and easily colored to almost any desired shade or hue.

  9. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper; Reedy, Robert

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  10. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  11. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  12. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  13. Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

    SciTech Connect (OSTI)

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-09-27

    The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C{sub J}). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n-type and p-type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C{sub J} has shown that GaAs 311B limits the formation of N-H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

  14. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  15. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  16. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  17. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli; Wang, Jianfeng; Ren, Guoqiang; Xu, Ke

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  18. CHARACTERIZATION OF MONOLITHIC FUEL FOIL PROPERTIES AND BOND STRENGTH

    SciTech Connect (OSTI)

    D E Burkes; D D Keiser; D M Wachs; J S Larson; M D Chapple

    2007-03-01

    Understanding fuel foil mechanical properties, and fuel / cladding bond quality and strength in monolithic plates is an important area of investigation and quantification. Specifically, what constitutes an acceptable monolithic fuel – cladding bond, how are the properties of the bond measured and determined, and what is the impact of fabrication process or change in parameters on the level of bonding? Currently, non-bond areas are quantified employing ultrasonic determinations that are challenging to interpret and understand in terms of irradiation impact. Thus, determining mechanical properties of the fuel foil and what constitutes fuel / cladding non-bonds is essential to successful qualification of monolithic fuel plates. Capabilities and tests related to determination of these properties have been implemented at the INL and are discussed, along with preliminary results.

  19. RAMATION V=W Ot TOTS= t sAy VnoffZW COMM1 AV 10i90 2M3 AM=W V A CLSI~LL331M A1N2UW

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    t9, S. nTCmI RAMATION V=W Ot TOTS= t sAy VnoffZW COMM1 AV 10i90 2M3 AM=W V A CLSI~LL331M A1N2UW OMA1ID9 V3 WMM I~UMMIM UU &!% W 2W WT AM 0? ?Ml U&O(1 LW pAM Mr MMW31 T!WOLVSD A GUS =-o &L MCMA I h MMK ON PLUPCMTtft GJ DR P -M~ CAM~ 07 W ULOW~ M *!Ti ~~mum 0sflOY iftJ A SLXQT OUT (Wi M I M ra IJJW MarB~ *~ W? $MOM.~ HMP~ IT V=h MMOTM RW1& 07W O RAttcMUU w~A0AO wAf~ K 43)AN wA BE tluywxwD (b(6 l~U %I S~)6 ASSA~ r 6 AM MWOim~~ SUM v~ DM 'VAT M OM1 IN * M S W IMIEf To MIK Row.

  20. Energetics of Hydrogen Bond Network Rearrangements in Liquid Water

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energetics of Hydrogen Bond Network Rearrangements in Liquid Water Print The unique chemical and physical properties of liquid water are thought to result from the highly directional hydrogen bonding (H-bonding) network structure and its associated dynamics. However, despite intense experimental and theoretical scrutiny, a complete description of this structure has been elusive. Recently, with the help of their novel liquid microjet apparatus, a University of California, Berkeley, group derived

  1. Energetics of Hydrogen Bond Network Rearrangements in Liquid Water

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energetics of Hydrogen Bond Network Rearrangements in Liquid Water Print The unique chemical and physical properties of liquid water are thought to result from the highly directional hydrogen bonding (H-bonding) network structure and its associated dynamics. However, despite intense experimental and theoretical scrutiny, a complete description of this structure has been elusive. Recently, with the help of their novel liquid microjet apparatus, a University of California, Berkeley, group derived

  2. Energetics of Hydrogen Bond Network Rearrangements in Liquid Water

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energetics of Hydrogen Bond Network Rearrangements in Liquid Water Print The unique chemical and physical properties of liquid water are thought to result from the highly directional hydrogen bonding (H-bonding) network structure and its associated dynamics. However, despite intense experimental and theoretical scrutiny, a complete description of this structure has been elusive. Recently, with the help of their novel liquid microjet apparatus, a University of California, Berkeley, group derived

  3. Energetics of Hydrogen Bond Network Rearrangements in Liquid Water

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energetics of Hydrogen Bond Network Rearrangements in Liquid Water Print The unique chemical and physical properties of liquid water are thought to result from the highly directional hydrogen bonding (H-bonding) network structure and its associated dynamics. However, despite intense experimental and theoretical scrutiny, a complete description of this structure has been elusive. Recently, with the help of their novel liquid microjet apparatus, a University of California, Berkeley, group derived

  4. Energetics of Hydrogen Bond Network Rearrangements in Liquid Water

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energetics of Hydrogen Bond Network Rearrangements in Liquid Water Print The unique chemical and physical properties of liquid water are thought to result from the highly directional hydrogen bonding (H-bonding) network structure and its associated dynamics. However, despite intense experimental and theoretical scrutiny, a complete description of this structure has been elusive. Recently, with the help of their novel liquid microjet apparatus, a University of California, Berkeley, group derived

  5. Energetics of Hydrogen Bond Network Rearrangements in Liquid Water

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energetics of Hydrogen Bond Network Rearrangements in Liquid Water Print The unique chemical and physical properties of liquid water are thought to result from the highly directional hydrogen bonding (H-bonding) network structure and its associated dynamics. However, despite intense experimental and theoretical scrutiny, a complete description of this structure has been elusive. Recently, with the help of their novel liquid microjet apparatus, a University of California, Berkeley, group derived

  6. Energetics of Hydrogen Bond Network Rearrangements in Liquid Water

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energetics of Hydrogen Bond Network Rearrangements in Liquid Water Print The unique chemical and physical properties of liquid water are thought to result from the highly directional hydrogen bonding (H-bonding) network structure and its associated dynamics. However, despite intense experimental and theoretical scrutiny, a complete description of this structure has been elusive. Recently, with the help of their novel liquid microjet apparatus, a University of California, Berkeley, group derived

  7. A Surprising Path for Proton Transfer Without Hydrogen Bonds

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Surprising Path for Proton Transfer Without Hydrogen Bonds Print Hydrogen bonds are found everywhere in chemistry and biology and are critical in DNA and RNA. A hydrogen bond results from the attractive dipolar interaction of a chemical group containing a hydrogen atom with a group containing an electronegative atom, such as nitrogen, oxygen, or fluorine, in the same or a different molecule. Conventional wisdom has it that proton transfer from one molecule to another can only happen via

  8. A Surprising Path for Proton Transfer Without Hydrogen Bonds

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Surprising Path for Proton Transfer Without Hydrogen Bonds Print Hydrogen bonds are found everywhere in chemistry and biology and are critical in DNA and RNA. A hydrogen bond results from the attractive dipolar interaction of a chemical group containing a hydrogen atom with a group containing an electronegative atom, such as nitrogen, oxygen, or fluorine, in the same or a different molecule. Conventional wisdom has it that proton transfer from one molecule to another can only happen via

  9. A Surprising Path for Proton Transfer Without Hydrogen Bonds

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Surprising Path for Proton Transfer Without Hydrogen Bonds Print Hydrogen bonds are found everywhere in chemistry and biology and are critical in DNA and RNA. A hydrogen bond results from the attractive dipolar interaction of a chemical group containing a hydrogen atom with a group containing an electronegative atom, such as nitrogen, oxygen, or fluorine, in the same or a different molecule. Conventional wisdom has it that proton transfer from one molecule to another can only happen via

  10. A Surprising Path for Proton Transfer Without Hydrogen Bonds

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Surprising Path for Proton Transfer Without Hydrogen Bonds Print Hydrogen bonds are found everywhere in chemistry and biology and are critical in DNA and RNA. A hydrogen bond results from the attractive dipolar interaction of a chemical group containing a hydrogen atom with a group containing an electronegative atom, such as nitrogen, oxygen, or fluorine, in the same or a different molecule. Conventional wisdom has it that proton transfer from one molecule to another can only happen via

  11. An unusual carbon-carbon bond cleavage reaction during phosphinothricin

    Office of Scientific and Technical Information (OSTI)

    biosynthesis (Journal Article) | SciTech Connect An unusual carbon-carbon bond cleavage reaction during phosphinothricin biosynthesis Citation Details In-Document Search Title: An unusual carbon-carbon bond cleavage reaction during phosphinothricin biosynthesis Natural products containing phosphorus-carbon bonds have found widespread use in medicine and agriculture. One such compound, phosphinothricin tripeptide, contains the unusual amino acid phosphinothricin attached to two alanine

  12. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  13. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Young, M. P.; Woodhead, C. S.; Roberts, J.; Noori, Y. J.; Noble, M. T.; Krier, A.; Hayne, M.; Young, R. J.; Smakman, E. P.; Koenraad, P. M.

    2014-11-15

    We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 ?eV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

  14. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. ); Koploy, M.A. )

    1992-01-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  15. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J.; Koploy, M.A.

    1992-08-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  16. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  17. Peer Exchange Call on Financing and Revenue: Bond Funding

    Broader source: Energy.gov [DOE]

    Better Buildings Neighborhood Program Peer Exchange Call on Financing and Revenue: Bond Funding, call slides and discussion summary, March 28, 2013.

  18. Tax-Exempt Bond Financing for Nonprofit Organizations and Industries

    Broader source: Energy.gov [DOE]

    State-chartered bond authorities exist in every state. They include healthcare facility authorities, housing finance agencies, higher education facility authorities, and industrial development...

  19. Using Qualified Energy Conservation Bonds for Public Building...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Bills in the City of Philadelphia Using Qualified Energy Conservation Bonds for Public Building Upgrades: Reducing Energy Bills in the City of Philadelphia Summarizes ...

  20. Splitting a C-O bond in dialkylethers with

    Office of Scientific and Technical Information (OSTI)

    bis(1,2,4-tri-t-butylcyclopentadienyl) cerium-hydride does not occur by a sigma-bond metathesis pathway: a combined experimental and DFT computational study (Journal Article) | SciTech Connect Splitting a C-O bond in dialkylethers with bis(1,2,4-tri-t-butylcyclopentadienyl) cerium-hydride does not occur by a sigma-bond metathesis pathway: a combined experimental and DFT computational study Citation Details In-Document Search Title: Splitting a C-O bond in dialkylethers with

  1. Intramolecular hydrogen bonding as a synthetic tool to induce...

    Office of Scientific and Technical Information (OSTI)

    chemical selectivity in acid catalyzed porphyrin synthesis Citation Details In-Document Search Title: Intramolecular hydrogen bonding as a synthetic tool to induce chemical ...

  2. Pressure-Induced Hydrogen Bond Symmetrization in Iron Oxyhydroxide...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Pressure-Induced Hydrogen Bond Symmetrization in Iron Oxyhydroxide ... Publication Date: 2014-07-21 OSTI Identifier: 1123936 Resource Type: Journal Article ...

  3. Municipal Bond - Power Purchase Agreement Model Continues to...

    Broader source: Energy.gov (indexed) [DOE]

    power purchase agreement model to provide low-cost solar energy. Author: National Renewable Energy Laboratory Municipal Bond - Power Purchase Agreement Model Continues to Provide...

  4. Site selectivity and bonding in the {beta}-phase aluminides:...

    Office of Scientific and Technical Information (OSTI)

    06269 (United States) Department of Applied Science, Brookhaven National Laboratory, ... BONDS; CRYSTAL STRUCTURE; X-RAY SPECTROSCOPY; DEBYE-WALLER FACTOR; EXPERIMENTAL ...

  5. Microsoft Word - NMN292==CARES--2003 Refunding Bonds Official...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    service to eligible customers and to undertake certain other programs, such as fish and wildlife protection, mitigation and enhancement. The 2003 Bonds are special limited...

  6. Photochemical route to actinide-transition metal bonds: synthesis...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Photochemical route to actinide-transition metal bonds: synthesis, characterization and reactivity of a series of thorium and uranium heterobimetallic complexes ...

  7. Energetics of Hydrogen Bond Network Rearrangements in Liquid...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energetics of Hydrogen Bond Network Rearrangements in Liquid Water Print The unique chemical and physical properties of liquid water are thought to result from the highly...

  8. Qualified Energy Conservation Bond (QECB) Update: New Guidance...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Bonds for Public Building Upgrades: Reducing Energy Bills in the City of Philadelphia Aggregating QECB Allocations and Using QECBs to Support the Private Sector: A Case ...

  9. GaP/Si heterojunction Solar Cells

    SciTech Connect (OSTI)

    Saive, R.; Chen, C.; Emmer, H.; Atwater, H.

    2015-05-11

    Improving the efficiency of solar cells requires the introduction of novel device concepts. Recent developments have shown that in Si solar cell technology there is still room for tremendous improvement. Using the heterojunction with intrinsic thin layer (HIT) approach 25.6 % power conversion efficiency was achieved. However, a-Si as a window and passivation layer comes with disadvantages as a-Si shows low conductivity and high parasitic absorption. Therefore, it is likely that using a crystalline material as window layer with high band gab and high mobility can further improve efficiency. We have studied GaP grown by MOCVD on Si with (001) and (112) orientation. We obtained crystalline layers with carrier mobility around 100 cm2/Vs and which passivate Si as confirmed by carrier lifetime measurements. We performed band alignment studies by X-ray photoelectron spectroscopy yielding a valence band offset of 0.3 eV. Comparing this value with the Schottky-model leads to an interface dipole of 0.59 eV. The open circuit voltage increases with increasing doping and is consistent with the theoretical open circuit voltage deduced from work function difference and interface dipole. We obtain an open circuit voltage of 0.38 V for n-doped GaP with doping levels in the order of 10^17 1/cm^3. In our next steps we will increase the doping level further in order to gain higher open circuit voltage. We will discuss the implications of these findings for GaP/Si heterojunction solar cells.

  10. Method of bonding single crystal quartz by field-assisted bonding

    DOE Patents [OSTI]

    Curlee, Richard M.; Tuthill, Clinton D.; Watkins, Randall D.

    1991-01-01

    The method of producing a hermetic stable structural bond between quartz crystals includes providing first and second quartz crystals and depositing thin films of borosilicate glass and silicon on portions of the first and second crystals, respectively. The portions of the first and second crystals are then juxtaposed in a surface contact relationship and heated to a temperature for a period sufficient to cause the glass and silicon films to become electrically conductive. An electrical potential is then applied across the first and second crystals for creating an electrostatic field between the adjoining surfaces and causing the juxtaposed portions to be attracted into an intimate contact and form a bond for joining the adjoining surfaces of the crystals.

  11. Method of bonding single crystal quartz by field-assisted bonding

    DOE Patents [OSTI]

    Curlee, R.M.; Tuthill, C.D.; Watkins, R.D.

    1991-04-23

    The method of producing a hermetic stable structural bond between quartz crystals includes providing first and second quartz crystals and depositing thin films of borosilicate glass and silicon on portions of the first and second crystals, respectively. The portions of the first and second crystals are then juxtaposed in a surface contact relationship and heated to a temperature for a period sufficient to cause the glass and silicon films to become electrically conductive. An electrical potential is then applied across the first and second crystals for creating an electrostatic field between the adjoining surfaces and causing the juxtaposed portions to be attracted into an intimate contact and form a bond for joining the adjoining surfaces of the crystals. 2 figures.

  12. Distributed bragg reflector using AIGaN/GaN

    DOE Patents [OSTI]

    Waldrip, Karen E.; Lee, Stephen R.; Han, Jung

    2004-08-10

    A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

  13. Bond-bending isomerism of Au2I3-: Competition between covalent bonding and aurophilicity

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Wan -Lu; Liu, Hong -Tao; Jian, Tian; Lopez, Gary V.; Piazza, Zachary A.; Huang, Dao -Ling; Chen, Teng -Teng; Su, Jing; Yang, Ping; Chen, Xin; et al

    2015-10-13

    We report a joint photoelectron spectroscopy and theoretical investigation of the gaseous Au2I3– cluster, which is found to exhibit two types of isomers due to competition between Au–I covalent bonding and Au–Au aurophilic interactions. The covalent bonding favors a bent IAuIAuI– structure with an obtuse Au–I–Au angle (100.7°), while aurophilic interactions pull the two Au atoms much closer, leading to an acutely bent structure (72.0°) with an Au–Au distance of 3.08 Å. The two isomers are separated by a small barrier and are nearly degenerate with the obtuse isomer being slightly more stable. At low temperature, only the obtuse isomermore » is observed; distinct experimental evidence is observed for the co-existence of a combination of isomers with both acute and obtuse bending angles at room temperature. As a result, the two bond-bending isomers of Au2I3– reveal a unique example of one molecule being able to oscillate between different structures as a result of two competing chemical forces.« less

  14. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  15. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  16. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  17. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    SciTech Connect (OSTI)

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  18. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  19. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  20. fe0013961-GaTech | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Performer Georgia Tech Research Corporation, Atlanta GA 30332 Background While earlier research focused on the properties of the hydrate mass per se (Sloan Jr and Koh 2007), ...

  1. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19 }m{sup −2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  2. Photoluminescence from GaAs nanodisks fabricated by using combination...

    Office of Scientific and Technical Information (OSTI)

    GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth Citation Details In-Document Search Title:...

  3. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  4. Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well

    Office of Scientific and Technical Information (OSTI)

    lasers on InP substrate (Journal Article) | SciTech Connect Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well lasers on InP substrate Citation Details In-Document Search Title: Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well lasers on InP substrate We have demonstrated experimentally the InP-based "M"-type GaAsSb/InGaAs quantum-well (QW) laser lasing at 2.41 μm at room temperature by optical pumping. The threshold power density

  5. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  6. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  7. Electrically conductive resinous bond and method of manufacture

    DOE Patents [OSTI]

    Snowden, T.M. Jr.; Wells, B.J.

    1985-01-01

    A method of bonding elements together with a bond of high strength and good electrical conductivity which comprises: applying an unfilled polyimide resin between surfaces of the elements to be bonded, heat treating said unfilled polyimide resin in stages between a temperature range of about 40 to 365/sup 0/C to form a strong adhesive bond between said elements, applying a metal-filled polyimide resin overcoat between said elements so as to provide electrical connection therebetween, and heat treating said metal-filled polyimide resin with substantially the same temperature profile as the unfilled polyimide resin. The present invention is also concerned with an adhesive, resilient, substantially void free bonding combination for providing a high strength, electrically conductive adhesive attachment between electrically conductive elements which comprises a major amount of an unfilled polyimide resin and a minor amount of a metal-filled polyimide resin.

  8. Electrically conductive resinous bond and method of manufacture

    DOE Patents [OSTI]

    Snowden, Jr., Thomas M.; Wells, Barbara J.

    1987-01-01

    A method of bonding elements together with a bond of high strength and good electrical conductivity which comprises: applying an unfilled polyimide resin between surfaces of the elements to be bonded, heat treating said unfilled polyimide resin in stages between a temperature range of about 40.degree. to 365.degree. C. to form a strong adhesive bond between said elements, applying a metal-filled polyimide resin overcoat between said elements so as to provide electrical connection therebetween, and heat treating said metal-filled polyimide resin with substantially the same temperature profile as the unfilled polyimide resin. The present invention is also concerned with an adhesive, resilient, substantially void free bonding combination for providing a high strength, electrically conductive adhesive attachment between electrically conductive elements which comprises a major amount of an unfilled polyimide resin and a minor amount of a metal-filled polyimide resin.

  9. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN.

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN. Citation Details In-Document Search Title: Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN. Abstract not provided. Authors: Ihlefeld, Jon ; Brumbach, Michael T. ; Allerman, Andrew A. ; Wheeler, David Roger ; Atcitty, Stanley Publication Date: 2015-01-01 OSTI Identifier: 1244879 Report Number(s): SAND2015-0073C 558329 DOE Contract Number: AC04-94AL85000 Resource

  10. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  11. Memo_Ex_Parte_Comm.pdf

    Energy Savers [EERE]

  12. Easton Utilities Comm | Open Energy Information

    Open Energy Info (EERE)

    861 Data Utility Id 5625 Utility Location Yes Ownership M NERC Location RFC NERC RFC Yes RTO PJM Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes...

  13. Springfield Public Utils Comm | Open Energy Information

    Open Energy Info (EERE)

    Website: www.springfieldmn.orgindex.as Facebook: https:www.facebook.comspringfieldmn?refhl Outage Hotline: 507-723-3519 References: EIA Form EIA-861 Final Data File for 2010 -...

  14. Bagley Public Utilities Comm | Open Energy Information

    Open Energy Info (EERE)

    index.asp?SEC Twitter: @bagleyminnesota Facebook: https:www.facebook.comBagleyMn?reftntnmn References: EIA Form EIA-861 Final Data File for 2010 - File1a1 EIA Form 861...

  15. Proctor Public Utilities Comm | Open Energy Information

    Open Energy Info (EERE)

    624-4055 Website: www.ci.proctor.mn.us Facebook: https:www.facebook.comCityOfProctor?refhl Outage Hotline: (218) 624-4055 References: EIA Form EIA-861 Final Data File for 2010...

  16. Hutchinson Utilities Comm | Open Energy Information

    Open Energy Info (EERE)

    Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Wholesale Marketing Yes Activity Retail Marketing Yes Activity Bundled Services Yes This article is a...

  17. Crisp County Power Comm | Open Energy Information

    Open Energy Info (EERE)

    2010 - File1a1 EIA Form 861 Data Utility Id 4538 Utility Location Yes Ownership P NERC Location SERC NERC SERC Yes Operates Generating Plant Yes Activity Generation Yes Activity...

  18. Property:CommProtocol | Open Energy Information

    Open Energy Info (EERE)

    Doppler Volume Sampler + RS-232 + MHK ISDBInstrumentsVaisala WINDCAP Ultrasonic Wind Sensor WMT700 + RS-232 + MHK ISDBInstrumentsVector V102 GPS Compass + RS-232 + MHK ISDB...

  19. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N. E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M. E-mail: Martin.Kuball@bristol.ac.uk; Paskova, T.; Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 ; Evans, K. R.; Leach, J.; Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 ; Li, X.; Özgür, Ü.; Morkoç, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  20. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F. Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Kryzhanovskaya, N. V.; Synitsin, M. A.; Sizov, V. S.; Zakgeim, A. L.; Mizerov, M. N.

    2010-06-15

    A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue and yellow-green spectral ranges. The optical properties of structures of this kind have been studied, and it is demonstrated that the use of such a superlattice makes it possible to obtain effective emission from the active region.

  1. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  2. Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.01.2??m due to increased charge carrier's localization

    SciTech Connect (OSTI)

    Kryzhkov, D. I. Yablonsky, A. N.; Morozov, S. V.; Aleshkin, V. Ya.; Krasilnik, Z. F.; Zvonkov, B. N.; Vikhrova, O. V.

    2014-11-28

    In this work, a study of the photoluminescence (PL) temperature dependence in quantum well GaAs/GaAsSb and double quantum well InGaAs/GaAsSb/GaAs heterostructures grown by metalorganic chemical vapor deposition with different parameters of GaAsSb and InGaAs layers has been performed. It has been demonstrated that in double quantum well InGaAs/GaAsSb/GaAs heterostructures, a significant shift of the PL peak to a longer-wavelength region (up to 1.2??m) and a considerable reduction in the PL thermal quenching in comparison with GaAs/GaAsSb structures can be obtained due to better localization of charge carriers in the double quantum well. For InGaAs/GaAsSb/GaAs heterostructures, an additional channel of radiative recombination with participation of the excited energy states in the quantum well, competing with the main ground-state radiative transition, has been revealed.

  3. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  4. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  5. Ultrafast dynamics of type-II GaSb/GaAs quantum dots

    SciTech Connect (OSTI)

    Komolibus, K.; Piwonski, T.; Gradkowski, K.; Reyner, C. J.; Liang, B.; Huffaker, D. L.; Huyet, G.; Houlihan, J.

    2015-01-19

    In this paper, room temperature two-colour pump-probe spectroscopy is employed to study ultrafast carrier dynamics in type-II GaSb/GaAs quantum dots. Our results demonstrate a strong dependency of carrier capture/escape processes on applied reverse bias voltage, probing wavelength and number of injected carriers. The extracted timescales as a function of both forward and reverse bias may provide important information for the design of efficient solar cells and quantum dot memories based on this material. The first few picoseconds of the dynamics reveal a complex behaviour with an interesting feature, which does not appear in devices based on type-I materials, and hence is linked to the unique carrier capture/escape processes possible in type-II structures.

  6. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  7. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-μm transport was observed within an electron spin lifetime of 1.2 ns at room temperature when using an in-plane electric field of 1.75 kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  8. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  9. Reactive codoping of GaAlInP compound semiconductors (Patent...

    Office of Scientific and Technical Information (OSTI)

    Patent: Reactive codoping of GaAlInP compound semiconductors Citation Details In-Document Search Title: Reactive codoping of GaAlInP compound semiconductors A GaAlInP compound ...

  10. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  11. Thermal Design and Characterization of Heterogeneously Integrated InGaP/GaAs HBTs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Choi, Sukwon; Peake, Gregory M.; Keeler, Gordon A.; Geib, Kent M.; Briggs, Ronald D.; Beechem, Thomas E.; Shaffer, Ryan A.; Clevenger, Jascinda; Patrizi, Gary A.; Klem, John F.; et al

    2016-04-21

    Flip-chip heterogeneously integrated n-p-n InGaP/GaAs heterojunction bipolar transistors (HBTs) with integrated thermal management on wide-bandgap AlN substrates followed by GaAs substrate removal are demonstrated. Without thermal management, substrate removal after integration significantly aggravates self-heating effects, causing poor I–V characteristics due to excessive device self-heating. An electrothermal codesign scheme is demonstrated that involves simulation (design), thermal characterization, fabrication, and evaluation. Thermoreflectance thermal imaging, electrical-temperature sensitive parameter-based thermometry, and infrared thermography were utilized to assess the junction temperature rise in HBTs under diverse configurations. In order to reduce the thermal resistance of integrated devices, passive cooling schemes assisted by structural modification, i.e.,more » positioning indium bump heat sinks between the devices and the carrier, were employed. By implementing thermal heat sinks in close proximity to the active region of flip-chip integrated HBTs, the junction-to-baseplate thermal resistance was reduced over a factor of two, as revealed by junction temperature measurements and improvement of electrical performance. In conclusion, the suggested heterogeneous integration method accounts for not only electrical but also thermal requirements providing insight into realization of advanced and robust III–V/Si heterogeneously integrated electronics.« less

  12. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect (OSTI)

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  13. Optical properties of multi-stacked InGaAs/GaNAs quantum dot solar cell fabricated on GaAs (311)B substrate

    SciTech Connect (OSTI)

    Shoji, Yasushi; Akimoto, Katsuhiro; Okada, Yoshitaka

    2012-09-15

    Quantum dot solar cells (QDSCs) comprised of 10 stacked pairs of strain-compensated InGaAs/GaNAs QD structure have been fabricated by atomic hydrogen-assisted molecular beam epitaxy. A homogeneous and high-density QD array structure with improved in-plane ordering and total density of {approx}10{sup 12} cm{sup -2} has been achieved on GaAs (311)B grown at 460 Degree-Sign C after stacking. The external quantum efficiency (EQE) of InGaAs/GaNAs QDSC increases in the longer wavelength range due to additive contribution from QD layers inserted in the intrinsic region. The short-circuit current density measured for QDSC is 17.2 mA/cm{sup 2} compared to 14.8 mA/cm{sup 2} of GaAs reference cell. Further, an increase in EQE due to photocurrent production by 2-step photon absorption has been observed at room temperature though it is still small at around 0.1%.

  14. Time-Resolved Study of Bonding in Liquid Carbon

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Time-Resolved Study of Bonding in Liquid Carbon Time-Resolved Study of Bonding in Liquid Carbon Print Wednesday, 28 September 2005 00:00 We are accustomed to observing carbon in its elemental form as a solid, ranging from the soft "lead" in pencils to the precious gemstone in diamond rings. While considerable attention has been focused on solid forms of carbon, the properties of liquid carbon are much more difficult to measure accurately. The very strong bonding between carbon atoms

  15. Method for joining metal by solid-state bonding

    DOE Patents [OSTI]

    Burkhart, L. Elkin; Fultz, Chester R.; Maulden, Kerry A.

    1979-01-01

    The present development is directed to a method for joining metal at relatively low temperatures by solid-state bonding. Planar surfaces of the metal workpieces are placed in a parallel abutting relationship with one another. A load is applied to at least one of the workpieces for forcing the workpieces together while one of the workpieces is relatively slowly oscillated in a rotary motion over a distance of about 1.degree.. After a preselected number of oscillations, the rotary motion is terminated and the bond between the abutting surfaces is effected. An additional load may be applied to facilitate the bond after terminating the rotary motion.

  16. Pollution-abatement revenue bonds as a source of finance

    SciTech Connect (OSTI)

    Bradley, J.F.; Christofi, P.

    1980-01-31

    The use of pollution-abatement revenue bonds, or environmental improvement bonds, is a comparatively new development in electric-utility financing. It has proven to be a convenient and relatively low-cost source of funds for certain kinds of required capital investment. The authors conducted a study of the extent to which, and manner in which, these instruments have been utilized by utilities, examining and analyzing the contents of 363 pollution-abatement revenue bond issues that appeared from 1971 to 1978. The report on their findings and on the benefits of this form of financing for utilities is presented.

  17. Wire bond vibration of forward pixel tracking detector of CMS

    SciTech Connect (OSTI)

    Atac, M.; Gobbi, B.; Kwan, S.; Pischalnikov, Y.; Spencer, E.; Sellberg, G.; Pavlicek, V.; /Fermilab

    2006-10-01

    Wire bonds of the Forward Pixel (FPix) tracking detectors are oriented in the direction that maximizes Lorentz Forces relative to the 4 Tesla field of the Compact Muon Solenoid (CMS) Detector's magnet. The CMS Experiment is under construction at the Large Hadron Collider at CERN, Geneva, Switzerland. We were concerned about Lorentz Force oscillating the wires at their fundamental frequencies and possibly fracturing or breaking them at their heels, as happened with the CDF wire bonds. This paper reports a study to understand what conditions break such bonds.

  18. Hydrogen-Bond Networks: Strengths of Different Types of Hydrogen Bonds and An Alternative to the Low Barrier Hydrogen-Bond Proposal

    SciTech Connect (OSTI)

    Shokri, Alireza; Wang, Yanping; O'Doherty, George A.; Wang, Xue B.; Kass, Steven R.

    2013-11-27

    We report quantifying the strengths of different types of hydrogen bonds in hydrogen bond networks (HBNs) via measurement of the adiabatic electron detachment energy of the conjugate base of a small covalent polyol model compound (i.e., (HOCH2CH2CH(OH)CH2)2CHOH) in the gas phase and the pKa of the corresponding acid in DMSO. The latter result reveals that the hydrogen bonds to the charged center and those that are one solvation shell further away (i.e., primary and secondary) provide 5.3 and 2.5 pKa units of stabilization per hydrogen bond in DMSO. Computations indicate that these energies increase to 8.4 and 3.9 pKa units in benzene and that the total stabilizations are 16 (DMSO) and 25 (benzene) pKa units. Calculations on a larger linear heptaol (i.e., (HOCH2CH2CH(OH)CH2CH(OH)CH2)2CHOH) reveal that the terminal hydroxyl groups each contribute 0.6 pKa units of stabilization in DMSO and 1.1 pKa units in benzene. All of these results taken together indicate that the presence of a charged center can provide a powerful energetic driving force for enzyme catalysis and conformational changes such as in protein folding due to multiple hydrogen bonds in a HBN.

  19. Bonding Low-density Nanoporous Metal Foams Using Sputtered Solder

    SciTech Connect (OSTI)

    Bono, M; Cervantes, O; Akaba, C; Hamza, A; Foreman, R; Teslich, N

    2007-08-21

    A method has been developed for bonding low-density nanoporous metal foam components to a substrate using solder that is sputtered onto the surfaces. Metal foams have unusual properties that make them excellent choices for many applications, and as technologies for processing these materials are evolving, their use in industry is increasing dramatically. Metal foams are lightweight and have advantageous dynamic properties, which make them excellent choices for many structural applications. They also provide good acoustic damping, low thermal conductivity, and excellent energy absorption characteristics. Therefore, these materials are commonly used in the automotive, aerospace, construction, and biomedical industries. The synthesis of nanoporous metal foams with a cell size of less then 1 {micro}m is an emerging technology that is expected to lead to widespread application of metal foams in microdevices, such as sensors and actuators. One of the challenges to manufacturing components from metal foams is that they can be difficult to attach to other structures without degrading their properties. For example, traditional liquid adhesives cannot be used because they are absorbed into foams. The problem of bonding or joining can be particularly difficult for small-scale devices made from nanoporous foam, due to the requirement for a thin bond layer. The current study addresses this problem and develops a method of soldering a nanoporous metal foam to a substrate with a bond thickness of less than 2 {micro}m. There are many applications that require micro-scale metal foams precisely bonded to substrates. This study was motivated by a physics experiment that used a laser to drive a shock wave through an aluminum foil and into a copper foam, in order to determine the speed of the shock in the copper foam. To avoid disturbing the shock, the interface between the copper foam and the aluminum substrate had to be as thin as possible. There are many other applications that could benefit from the bonding technology developed in this study, such as small-scale lightweight structural members, high-strength thermal insulating layers for electronics, and micro-scale mechanical dampers, to name but a few. Each of these applications requires one or more small metal foam components precisely bonded to a substrate. Several methods for bonding metal foam components have been developed by previous researchers. Macroscopic metal foam parts have been successfully bonded by laser welding to create T-sections and butt joints. Ultrasonic welding has been used to join aluminum sheet metal to aluminum foam for structural applications. These methods work well for bonding large foam components, but reducing these methods to a smaller length scale would be challenging. One method that has shown great potential for bonding layers of metal foams to substrates is a brazing process that uses a sputter-deposited interface material. Shirzadi et al.[9] have demonstrated bonds between stainless steel foam and a stainless steel substrate using a layer of copper-titanium filler metal that is sputtered onto the interface surfaces. The foam pieces that they bonded were approximately 10 mm in diameter and 10 mm thick with a cell size of approximately 200 {micro}m. After depositing the filler material, pressing the materials together, and heating them with an induction heater, bonds were achieved without causing significant damage to the foam. The current study also uses a sputter-deposited interface material to bond foam to a substrate. However, in contrast to previous work, the current study examines bonding microscale pieces of fragile nanoporous metal foam. In this study, a method is developed to bond a thin sheet of fragile, low-density nanoporous copper foam to an aluminum foil substrate of thickness 40 {micro}m. By sputter depositing an indium-silver alloy onto the foam and the substrate, a solder joint with a thickness of less than 2 {micro}m was achieved.

  20. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect (OSTI)

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  1. Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3??m

    SciTech Connect (OSTI)

    Goldmann, Elias Jahnke, Frank; Paul, Matthias; Kettler, Jan; Jetter, Michael; Michler, Peter; Krause, Florian F.; Mller, Knut; Mehrtens, Thorsten; Rosenauer, Andreas

    2014-10-13

    A combined experimental and theoretical study of InGaAs/GaAs quantum dots (QDs) emitting at 1.3??m under the influence of a strain-reducing InGaAs quantum well is presented. We demonstrate a red shift of 2040?nm observed in photoluminescence spectra due to the quantum well. The InGaAs/GaAs QDs grown by metal organic vapor phase epitaxy show a bimodal height distribution (1?nm and 5?nm) and indium concentrations up to 90%. The emission properties are explained with combined tight-binding and configuration-interaction calculations of the emission wavelengths in conjunction with high-resolution scanning transmission electron microscopy investigations of QD geometry and indium concentrations in the QDs, which directly enter the calculations. QD geometries and concentration gradients representative for the ensemble are identified.

  2. GaInN light-emitting diodes using separate epitaxial growth for the p-type region to attain polarization-inverted electron-blocking layer, reduced electron leakage, and improved hole injection

    SciTech Connect (OSTI)

    Meyaard, David S., E-mail: meyaad@rpi.edu; Lin, Guan-Bo; Ma, Ming; Fred Schubert, E. [Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)] [Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Cho, Jaehee [Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Han, Sang-Heon; Kim, Min-Ho; Shim, HyunWook; Sun Kim, Young [LED Business, Samsung Electronics, Yongin 446-920 (Korea, Republic of)] [LED Business, Samsung Electronics, Yongin 446-920 (Korea, Republic of)

    2013-11-11

    A GaInN light-emitting diode (LED) structure is analyzed that employs a separate epitaxial growth for the p-type region, i.e., the AlGaN electron-blocking layer (EBL) and p-type GaN cladding layer, followed by wafer or chip bonding. Such LED structure has a polarization-inverted EBL and allows for uncompromised epitaxial-growth optimization of the p-type region, i.e., without the need to consider degradation of the quantum-well active region during p-type region growth. Simulations show that such an LED structure reduces electron leakage, reduces the efficiency droop, improves hole injection, and has the potential to extend high efficiencies into the green spectral region.

  3. Bonded Bracket Assmebly for Frameless Solar Panels

    SciTech Connect (OSTI)

    Murray, Todd; Jackson, Nick; Dupont, Luc; Moser, Jeff

    2013-01-30

    In February 2011 the US Department of Energy announced their new Sunshot Initiative. The Sunshot goal is to reduce the total cost of solar energy systems by about 75 percent before the end of the decade. The DOE estimated that a total installed cost of $$1 per watt for photovoltaic systems would be equivalent to 5-6¢/kilowatt hour (kWh) for energy available from the grid. The DOE also estimated that to meet the $1 per watt goal, PV module costs would need to be reduced to $ .50 per watt, balance of systems costs would need to be reduced to $.40 per watt, and power electronic costs would need to reach $.10 per watt. To address the BOS balance of systems cost component of the $1 per watt goal, the DOE announced a funding opportunity called (BOS-X) Extreme Balance of System Hardware Cost Reductions. The DOE identified eight areas within the total BOS costs: 1) installation labor, 2) installation materials, 3) installation overhead and profit, 4) tracker, 5) permitting and commissioning, 6) site preparation, 7) land acquisition, 8) sales tax. The BOS-X funding announcement requested applications in four specific topics;Topic 1: Transformational Building Integrated Photovoltaic (BIPV) Modules; Topic 2: Roof and Ground Mount Innovations; Topic 3: Transformational Photovoltaic System Designs; and Topic 4: Development of New Wind Load Codes for PV Systems.The application submitted by ARaymond Tinnerman reflected the requirements listed in Topic #2, Roof and Ground Mount Innovations. The goal of topic #2 was to develop technologies that would result in the extreme reduction of material and labor costs associated with applications that require physical connections and attachments to roof and ground mount structures. The topics researched in this project included component cost reduction, labor reduction, weight reduction, wiring innovations, and alternative material utilization. The project objectives included; 1) The development of an innovative quick snap bracket assembly that would be bonded to frameless PV modules for commercial rooftop installations; 2) The development of a composite pultruded rail to replace traditional racking materials; 3) In partnership with a roofing company, pilot the certification of a commercial roof to be solar panel compliant, eliminating the need for structural analysis and government oversight resulting in significantly decreased permitting costs; and 4) Reduce the sum of all cost impacts in topic #2 from a baseline total of $2.05/watt to $.34/watt.

  4. Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

    SciTech Connect (OSTI)

    Shin, H. S.; SEMATECH, 2706 Montopolis Dr., Austin, Texas 78741; The University of Texas, Austin, Texas 78758 ; Yum, J. H.; The University of Texas, Austin, Texas 78758 ; Johnson, D. W.; Texas A and M University College Station, Texas 77843 ; Harris, H. R.; Hudnall, Todd W.; Oh, J.; Kirsch, P.; Wang, W.-E.; Bielawski, C. W.; Banerjee, S. K.; Lee, J. C.; Lee, H. D.

    2013-11-25

    In this paper, we discuss atomic configuration of atomic layer deposition (ALD) beryllium oxide (BeO) using the quantum chemistry to understand the theoretical origin. BeO has shorter bond length, higher reaction enthalpy, and larger bandgap energy compared with those of ALD aluminum oxide. It is shown that the excellent material properties of ALD BeO can reduce interface defect density due to the self-cleaning reaction and this contributes to the improvement of device performance of InGaAs MOSFETs. The low interface defect density and low leakage current of InGaAs MOSFET were demonstrated using X-ray photoelectron spectroscopy and the corresponding electrical results.

  5. NMSLO Water Lease Damage Bond | Open Energy Information

    Open Energy Info (EERE)

    Water Lease Damage BondLegal Published NA Year Signed or Took Effect 2012 Legal Citation Not provided DOI Not Provided Check for DOI availability: http:crossref.org Online...

  6. Nontypical iodine-halogen bonds in the crystal structure of ...

    Office of Scientific and Technical Information (OSTI)

    Nontypical iodine-halogen bonds in the crystal structure of (3 E )-8-chloro-3-iodomethylidene-2,3-dihydro-1,4-oxazino2,3,4- ij quinolin-4-ium triiodide Citation Details ...

  7. Time-Resolved Study of Bonding in Liquid Carbon

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Lindenberg, O.R. Monteiro, Z. Chang, R.W. Lee, and R.W. Falcone, "Bonding in liquid carbon studied by time-resolved x-ray absorption spectroscopy," Phys. Rev. Lett. 94 057407 (2005...

  8. Multilayer roll bonded aluminium foil: processing, microstructure and flow stress

    SciTech Connect (OSTI)

    Barlow, C.Y.; Nielsen, P.; Hansen, N

    2004-08-02

    Bulk aluminium has been produced by warm-rolling followed by cold-rolling of commercial purity (99% purity) aluminium foil. The bonding appeared perfect from observation with the naked eye, light and transmission electron microscopy. By comparison with bulk aluminium of similar purity (AA1200) rolled to a similar strain (90%RA), the roll-bonded metal showed a much higher density of high-angle grain boundaries, similar strength and improved thermal stability. This study has implications for a number of applications in relation to the processing of aluminium. Roll bonding is of interest as a method for grain size refinement; oxide-containing materials have increased strength, enhanced work-hardening behaviour, and exhibit alterations in recrystallisation behaviour. The behaviour of the hard oxide film is of interest in aluminium processing, and has been investigated by characterising the size and distribution of oxide particles in the roll-bonded samples.

  9. Time-Resolved Study of Bonding in Liquid Carbon

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Time-Resolved Study of Bonding in Liquid Carbon Print We are accustomed to observing carbon in its elemental form as a solid, ranging from the soft "lead" in pencils to the...

  10. Aluminum for bonding Si-Ge alloys to graphite

    DOE Patents [OSTI]

    Eggemann, Robert V.

    1976-01-13

    Improved thermoelectric device and process, comprising the high-temperature, vacuum bonding of a graphite contact and silicon-germanium thermoelectric element by the use of a low void, aluminum, metallurgical shim with low electrical resistance sandwiched therebetween.

  11. IRS Announces New Tribal Economic Development Bond Allocation Guidance

    Broader source: Energy.gov [DOE]

    Treasury and the IRS published new guidance today allocating Tribal Economic Development Bonds (TEDBs) for Tribes that have projects that are in the final stages of going to the market to receive financing.

  12. Low-Cost Financing with Clean Renewable Energy Bonds

    Broader source: Energy.gov [DOE]

    Contains information from the TAP Webcast on June 24, 2009 on clean renewable energy bonds from Claire Kreycik on feed-in tariffs, an economic resource for developing renewable energy.

  13. A Surprising Path for Proton Transfer Without Hydrogen Bonds

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    9.0.2. To examine how the molecules were bonded, the team first created a gaseous molecular beam of methylated uracil monomers and dimers, then ionized them with vacuum...

  14. Time-Resolved Study of Bonding in Liquid Carbon

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Time-Resolved Study of Bonding in Liquid Carbon Print We are accustomed to observing carbon in its elemental form as a solid, ranging from the soft "lead" in pencils to the precious gemstone in diamond rings. While considerable attention has been focused on solid forms of carbon, the properties of liquid carbon are much more difficult to measure accurately. The very strong bonding between carbon atoms that gives diamonds their hardness also makes carbon very difficult to melt,

  15. Time-Resolved Study of Bonding in Liquid Carbon

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Time-Resolved Study of Bonding in Liquid Carbon Print We are accustomed to observing carbon in its elemental form as a solid, ranging from the soft "lead" in pencils to the precious gemstone in diamond rings. While considerable attention has been focused on solid forms of carbon, the properties of liquid carbon are much more difficult to measure accurately. The very strong bonding between carbon atoms that gives diamonds their hardness also makes carbon very difficult to melt,

  16. Time-Resolved Study of Bonding in Liquid Carbon

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Time-Resolved Study of Bonding in Liquid Carbon Print We are accustomed to observing carbon in its elemental form as a solid, ranging from the soft "lead" in pencils to the precious gemstone in diamond rings. While considerable attention has been focused on solid forms of carbon, the properties of liquid carbon are much more difficult to measure accurately. The very strong bonding between carbon atoms that gives diamonds their hardness also makes carbon very difficult to melt,

  17. New Bond Helps Toledo, Ohio, Expand Financing Pool

    Broader source: Energy.gov [DOE]

    The BetterBuildings Northwest Ohio (BBNWO) Program, in conjunction with the Toledo Ohio Advanced Energy Improvement Corporation—a pioneering Energy Special Improvement District in Ohio that allows energy efficiency improvements to be funded and paid for through property special assessments—has received a second bond from the Toledo-Lucas County Port Authority. This bond is in the amount of $6,435,000.

  18. Intramolecular hydrogen bonding as a synthetic tool to induce chemical

    Office of Scientific and Technical Information (OSTI)

    selectivity in acid catalyzed porphyrin synthesis (Journal Article) | SciTech Connect Intramolecular hydrogen bonding as a synthetic tool to induce chemical selectivity in acid catalyzed porphyrin synthesis Citation Details In-Document Search Title: Intramolecular hydrogen bonding as a synthetic tool to induce chemical selectivity in acid catalyzed porphyrin synthesis Authors: Megiatto Jr., Jackson D. ; Patterson, Dustin ; Sherman, Ben ; Moore, Thomas A. ; Gust, Devens ; Moore, Ana L.

  19. Modulating the Bond Strength of DNA-Nanoparticle Superlattices (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Modulating the Bond Strength of DNA-Nanoparticle Superlattices Citation Details In-Document Search Title: Modulating the Bond Strength of DNA-Nanoparticle Superlattices Authors: Seo, Soyoung E. ; Wang, Mary X. ; Shade, Chad M. ; Rouge, Jessica L. ; Brown, Keith A. ; Mirkin, Chad A. [1] + Show Author Affiliations NWU Publication Date: 2016-03-24 OSTI Identifier: 1240175 Resource Type: Journal Article Resource Relation: Journal Name: ACS Nano; Journal Volume: 10;

  20. Time-Resolved Study of Bonding in Liquid Carbon

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Time-Resolved Study of Bonding in Liquid Carbon Print We are accustomed to observing carbon in its elemental form as a solid, ranging from the soft "lead" in pencils to the precious gemstone in diamond rings. While considerable attention has been focused on solid forms of carbon, the properties of liquid carbon are much more difficult to measure accurately. The very strong bonding between carbon atoms that gives diamonds their hardness also makes carbon very difficult to melt,

  1. Time-Resolved Study of Bonding in Liquid Carbon

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Time-Resolved Study of Bonding in Liquid Carbon Print We are accustomed to observing carbon in its elemental form as a solid, ranging from the soft "lead" in pencils to the precious gemstone in diamond rings. While considerable attention has been focused on solid forms of carbon, the properties of liquid carbon are much more difficult to measure accurately. The very strong bonding between carbon atoms that gives diamonds their hardness also makes carbon very difficult to melt,

  2. Time-Resolved Study of Bonding in Liquid Carbon

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Time-Resolved Study of Bonding in Liquid Carbon Print We are accustomed to observing carbon in its elemental form as a solid, ranging from the soft "lead" in pencils to the precious gemstone in diamond rings. While considerable attention has been focused on solid forms of carbon, the properties of liquid carbon are much more difficult to measure accurately. The very strong bonding between carbon atoms that gives diamonds their hardness also makes carbon very difficult to melt,

  3. Spectroscopy and Structure of the Simplest Actinide Bonds (Journal Article)

    Office of Scientific and Technical Information (OSTI)

    | DOE PAGES Published Article: Spectroscopy and Structure of the Simplest Actinide Bonds « Prev Next » Title: Spectroscopy and Structure of the Simplest Actinide Bonds Authors: Heaven, Michael C. ; Barker, Beau J. ; Antonov, Ivan O. Publication Date: 2014-11-20 OSTI Identifier: 1159530 Grant/Contract Number: FG02-01ER15153 Type: Published Article Journal Name: Journal of Physical Chemistry. A, Molecules, Spectroscopy, Kinetics, Environment, and General Theory Additional Journal

  4. BN Bonded BN fiber article and method of manufacture

    DOE Patents [OSTI]

    Hamilton, Robert S.

    1981-08-18

    A boron nitride bonded boron nitride fiber article and the method for its manufacture which comprises forming a shaped article with a composition comprising a bonding compound selected from boron oxide and boric acid and a structural fiber selected from the group consisting of boron oxide, boron nitride and partially nitrided boron oxide fibers, heating the composition in an anhydrous gas to a temperature above the melting point of the compound and nitriding the resulting article in ammonia gas.

  5. Optical and electrochemical properties of hydrogen-bonded

    Office of Scientific and Technical Information (OSTI)

    phenol-pyrrolidino[60]fullerenes (Journal Article) | SciTech Connect Optical and electrochemical properties of hydrogen-bonded phenol-pyrrolidino[60]fullerenes Citation Details In-Document Search Title: Optical and electrochemical properties of hydrogen-bonded phenol-pyrrolidino[60]fullerenes Authors: Moore, Gary F. ; Megiatto Jr., Jackson D. ; Hambourger, Michael ; Gervaldo, Miguel ; Moore, Thomas A. ; Gust, Devens ; Moore, Ana L. Publication Date: 2012-01-01 OSTI Identifier: 1066403 DOE

  6. Photochemical route to actinide-transition metal bonds: synthesis,

    Office of Scientific and Technical Information (OSTI)

    characterization and reactivity of a series of thorium and uranium heterobimetallic complexes (Journal Article) | SciTech Connect Journal Article: Photochemical route to actinide-transition metal bonds: synthesis, characterization and reactivity of a series of thorium and uranium heterobimetallic complexes Citation Details In-Document Search Title: Photochemical route to actinide-transition metal bonds: synthesis, characterization and reactivity of a series of thorium and uranium

  7. Disruption of Hydrogen Bonds between Major Histocompatibility Complex Class

    Office of Scientific and Technical Information (OSTI)

    II and the Peptide NTerminus Is Not Sufficient to Form a Human Leukocyte Antigen-DM Receptive State of Major Histocompatibility Complex Class II (Journal Article) | SciTech Connect Disruption of Hydrogen Bonds between Major Histocompatibility Complex Class II and the Peptide NTerminus Is Not Sufficient to Form a Human Leukocyte Antigen-DM Receptive State of Major Histocompatibility Complex Class II Citation Details In-Document Search Title: Disruption of Hydrogen Bonds between Major

  8. Pressure-Induced Hydrogen Bond Symmetrization in Iron Oxyhydroxide (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Journal Article: Pressure-Induced Hydrogen Bond Symmetrization in Iron Oxyhydroxide Citation Details In-Document Search Title: Pressure-Induced Hydrogen Bond Symmetrization in Iron Oxyhydroxide Authors: Xu, Weiming ; Greenberg, Eran ; Rozenberg, Gregory Kh. ; Pasternak, Moshe P. ; Bykova, Elena ; Boffa-Ballaran, Tiziana ; Dubrovinsky, Leonid ; Prakapenka, Vitali ; Hanfland, Michael ; Vekilova, Olga Yu. ; Simak, Sergei I. ; Abrikosov, Igor A. [1] ; Link) [2] ;

  9. Intramolecular hydrogen bonding as a synthetic tool to induce chemical

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    selectivity in acid catalyzed porphyrin synthesis Intramolecular hydrogen bonding as a synthetic tool to induce chemical selectivity in acid catalyzed porphyrin synthesis Authors: Megiatto, J. D., Patterson, D., Sherman, B. D., Moore, T. A., Gust, D., and Moore, A. L. Title: Intramolecular hydrogen bonding as a synthetic tool to induce chemical selectivity in acid catalyzed porphyrin synthesis Source: Chemical Communications Year: 2012 Volume: 48 Pages: 4558-4560 ABSTRACT: A straightforward

  10. Method of making sintered ductile intermetallic-bonded ceramic composites

    DOE Patents [OSTI]

    Plucknett, Kevin (Sharnbrook, GB); Tiegs, Terry N. (Lenoir City, TN); Becher, Paul F. (Oak Ridge, TN)

    1999-01-01

    A method of making an intermetallic-bonded ceramic composite involves combining a particulate brittle intermetallic precursor with a particulate reactant metal and a particulate ceramic to form a mixture and heating the mixture in a non-oxidizing atmosphere at a sufficient temperature and for a sufficient time to react the brittle intermetallic precursor and the reactant metal to form a ductile intermetallic and sinter the mixture to form a ductile intermetallic-bonded ceramic composite.

  11. Method of making sintered ductile intermetallic-bonded ceramic composites

    DOE Patents [OSTI]

    Plucknett, K.; Tiegs, T.N.; Becher, P.F.

    1999-05-18

    A method of making an intermetallic-bonded ceramic composite involves combining a particulate brittle intermetallic precursor with a particulate reactant metal and a particulate ceramic to form a mixture and heating the mixture in a non-oxidizing atmosphere at a sufficient temperature and for a sufficient time to react the brittle intermetallic precursor and the reactant metal to form a ductile intermetallic and sinter the mixture to form a ductile intermetallic-bonded ceramic composite. 2 figs.

  12. Microbial cleavage of organic C-S bonds

    DOE Patents [OSTI]

    Kilbane, J.J. II.

    1994-10-25

    A microbial process is described for selective cleavage of organic C-S bonds which may be used for reducing the sulfur content of sulfur-containing organic carbonaceous materials. Microorganisms of Rhodococcus rhodochrous and Bacillus sphaericus have been found which have the ability of selective cleavage of organic C-S bonds. Particularly preferred microorganisms are Rhodococcus rhodochrous strain ATCC 53968 and Bacillus sphaericus strain ATCC 53969 and their derivatives.

  13. Microbial cleavage of organic C-S bonds

    DOE Patents [OSTI]

    Kilbane, II, John J.

    1994-01-01

    A microbial process for selective cleavage of organic C--S bonds which may be used for reducing the sulfur content of sulfur-containing organic carbonaceous materials, Microorganisms of Rhodococcus rhodochrous and Bacillus sphaericus have been found which have the ability of selective cleavage of organic C--S bonds. Particularly preferred microorganisms are Rhodococcus rhodochrous strain ATCC 53968 and Bacillus sphaericus strain ATCC 53969 and their derivatives.

  14. Facile fabrication of high-performance InGaZnO thin film transistor using hydrogen ion irradiation at room temperature

    SciTech Connect (OSTI)

    Ahn, Byung Du [School of Electrical and Electronic Engineering, 50, Yonsei University, Seoul 120-749 (Korea, Republic of); Park, Jin-Seong [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Chung, K. B., E-mail: kbchung@dongguk.edu [Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715 (Korea, Republic of)

    2014-10-20

    Device performance of InGaZnO (IGZO) thin film transistors (TFTs) are investigated as a function of hydrogen ion irradiation dose at room temperature. Field effect mobility is enhanced, and subthreshold gate swing is improved with the increase of hydrogen ion irradiation dose, and there is no thermal annealing. The electrical device performance is correlated with the electronic structure of IGZO films, such as chemical bonding states, features of the conduction band, and band edge states below the conduction band. The decrease of oxygen deficient bonding and the changes in electronic structure of the conduction band leads to the improvement of device performance in IGZO TFT with an increase of the hydrogen ion irradiation dose.

  15. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  16. Characterization of Zns-GaP Naon-composites

    SciTech Connect (OSTI)

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  17. Outdoor Testing of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied

    SciTech Connect (OSTI)

    McMahon, W. E.; Emergy, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

    2005-08-01

    In this study, we measure the performance of GaInP2/GaAs tandem cells under direct beam sunlight outdoors in order to quantify their sensitivity to both spectral variation and GaInP2 top-cell thickness. A set of cells with five different top-cell thicknesses was mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for either the ASTM G-173 direct (G-173D) spectrum or the "air mass 1.5 global" (AM1.5G) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra with the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

  18. Making it pay in Athens, GA

    SciTech Connect (OSTI)

    Malloy, M.G.

    1997-04-01

    The materials recovery facility (MRF) in Athens, GA, is a well-fed recycling facility. But, if the local government has its way, it will be even better fed in the near future. The Athens-Clarke County (ACC) regional municipality in which the facility resides has a put-or-pay contract with the plant`s owner/operator, under which the more it feeds the MRF, the more money it receives in return, through the sale of recycled end products. The ACC Solid Waste Department uses a volume-based waste collection system that encourages residents to recycle--the more they recycle, the less trash they have to put out, and the less they pay each month. The Athens facility, which will be a featured site tour at next month`s WasteExpo `97 in nearby Atlanta, had its ground-breaking two years ago, in April 1995. ACC is responsible for delivering material--or seeing that recyclables are delivered--to the MRF, which is owned and operated by Resource Recovery Systems (RRS, Centerbrook, Conn.). Over the past year, ACC has stepped up various incentives for businesses to recycle and send their recyclables to the facility, including instituting pilot programs for commercial interests that offer them versions of volume-based collection similar to that done by residents.

  19. Bond-valence methods for pKa prediction. II. Bond-valence, electrostatic, molecular geometry, and solvation effects

    SciTech Connect (OSTI)

    Bickmore, Barry R.; Rosso, Kevin M.; Tadanier, Christopher J.; Bylaska, Eric J.; Doud, Darrin

    2006-08-15

    In a previous contribution, we outlined a method for predicting (hydr)oxy-acid and oxide surface acidity constants based on three main factors: bond valence, Me?O bond ionicity, and molecular shape. Here electrostatics calculations and ab initio molecular dynamics simulations are used to qualitatively show that Me?O bond ionicity controls the extent to which the electrostatic work of proton removal departs from ideality, bond valence controls the extent of solvation of individual functional groups, and bond valence and molecular shape controls local dielectric response. These results are consistent with our model of acidity, but completely at odds with other methods of predicting acidity constants for use in multisite complexation models. In particular, our ab initio molecular dynamics simulations of solvated monomers clearly indicate that hydrogen bonding between (hydr)oxo-groups and water molecules adjusts to obey the valence sum rule, rather than maintaining a fixed valence based on the coordination of the oxygen atom as predicted by the standard MUSIC model.

  20. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  1. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect (OSTI)

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  2. Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices

    SciTech Connect (OSTI)

    Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna

    2014-02-21

    We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

  3. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect (OSTI)

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing; Chen, Weixi; Ding, Ying

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  4. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed; Whipple, Richard E.; Grant, Patrick M.; O'Brien, Jr., Harold A.

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  5. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  6. Extremely scaled high-k/In?.??Ga?.??As gate stacks with low leakage and low interface trap densities

    SciTech Connect (OSTI)

    Chobpattana, Varistha; Mikheev, Evgeny; Zhang, Jack Y.; Mates, Thomas E.; Stemmer, Susanne

    2014-09-28

    Highly scaled gate dielectric stacks with low leakage and low interface trap densities are required for complementary metal-oxide-semiconductor technology with III-V semiconductor channels. Here, we show that a novel pre-deposition technique, consisting of alternating cycles of nitrogen plasma and tetrakis(dimethylamino)titanium, allows for HfO? and ZrO? gate stacks with extremely high accumulation capacitance densities of more than 5 ?F/cm? at 1 MHz, low leakage current, low frequency dispersion, and low midgap interface trap densities (10cm?eV?range). Using x-ray photoelectron spectroscopy, we show that the interface contains TiO? and small quantities of In?O?, but no detectable Ga- or As-oxides, or As-As bonding. The results allow for insights into the microscopic mechanisms that control leakage and frequency dispersion in high-k/III-V gate stacks.

  7. High Quantum Efficiency AlGaN/InGaN Photodetectors

    SciTech Connect (OSTI)

    Buckley, James H; Leopold, Daniel

    2009-11-24

    High efficiency photon counting detectors in use today for high energy particle detection applications have a significant spectral mismatch with typical sources and have a number of practical problems compared with conventional bialkali photomultiplier tubes. Numerous high energy physics experiments that employ scintillation light detectors or Cherenkov detectors would benefit greatly from photomultipliers with higher quantum efficiencies. The need for extending the sensitivity of photon detectors to the blue and UV wavebands comes from the fact that both Cherenkov light and some scintillators have an emission spectrum which is peaked at short wavelengths. This research involves the development of high quantum efficiency, high gain, UV/blue photon counting detectors based on AlGaN/InGaN photocathode heterostructures grown by molecular beam epitaxy (MBE). The work could eventually lead to nearly ideal light detectors with a number of distinct advantages over existing technologies for numerous applications in high-energy physics and particle astrophysics. Potential advantages include much lower noise detection, better stability and radiation resistance than other cathode structures, very low radioactive background levels for deep underground experiments and high detection efficiency of individual UV-visible photons. We are also working on the development of photocathodes with intrinsic gain, initially improving the detection efficiency of hybrid semiconductor-vacuum tube devices, and eventually leading to an all-solid-state photomultiplier device.

  8. Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells

    SciTech Connect (OSTI)

    Lin, Chien-Hung Lee, Chien-Ping

    2014-10-21

    High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 μm were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5 meV.

  9. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    SciTech Connect (OSTI)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer has the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.

  10. A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT)

    SciTech Connect (OSTI)

    Tsai, Jung-Hui; Lee, Ching-Sung; Lour, Wen-Shiung; Ma, Yung-Chun; Ye, Sheng-Shiun

    2011-05-15

    Excellent characteristics of an InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT) are first demonstrated. The insertion of a thin n-GaAs emitter layer between tynneling confinement and base layers effectivelty eliminates the potential spike at base-emitter junction and reduces the collector-emitter offset voltage, while the thin InGaP tunneling confinement layer is employed to reduce the transporting time across emitter region for electrons and maintain the good confinement effect for holes. Experimentally, the studied T-HEBN exhibits a maximum current gain of 285, a relatively low offset voltage of 40 mW, and a current-gain cutoff frequency of 26.4 GHz.

  11. Quaternary AlInGaN/InGaN quantum well on vicinal c-plane substrate for high emission intensity of green wavelengths

    SciTech Connect (OSTI)

    Park, Seoung-Hwan; Pak, Y. Eugene; Park, Chang Young; Mishra, Dhaneshwar; Yoo, Seung-Hyun; Cho, Yong-Hee Shim, Mun-Bo; Kim, Sungjin

    2015-05-14

    Electronic and optical properties of non-trivial semipolar AlInGaN/InGaN quantum well (QW) structures are investigated by using the multiband effective-mass theory and non-Markovian optical model. On vicinal c-plane GaN substrate miscut by a small angle (??GaN/InGaN system is shown to have ?3 times larger spontaneous emission peak intensity than the conventional InGaN/GaN system at green wavelength. It is attributed to much larger optical matrix element of the quaternary AlInGaN/InGaN system, derived from the reduction of internal electric field induced by polarizations. This effect exceeds the performance-degrading factor of smaller quasi-Fermi-level separation for the quaternary AlInGaN/InGaN system than that for the conventional InGaN/GaN system. Results indicate that the use of quaternary III-nitride QWs on vicinal substrates may be beneficial in improving the performance of optical devices emitting green light.

  12. Thermal Performance and Reliability of Bonded Interfaces for Power Electronics Packaging Applications (Presentation)

    SciTech Connect (OSTI)

    Devoto, D.

    2013-07-01

    This presentation discusses the thermal performance and reliability of bonded interfaces for power electronics packaging applications.

  13. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect (OSTI)

    zduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigr, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  14. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN

    Office of Scientific and Technical Information (OSTI)

    Sandia National Laboratories Exceptional service in the national interest SAND2015-0073C Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN 22 January 2015 Jon Ihlefeld, Michael Brumbach, Andrew A. Allerman, David R. Wheeler, and Stanley Atcitty This work was supported by the U.S. Department of Energy's Office of Electricity Delivery and Energy Reliability Program managed by Dr. Imre Gyuk and the Laboratory Directed Research and Development Program at Sandia National

  15. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  16. Anharmonic Potential Constants and Their Dependence Upon Bond Length

    DOE R&D Accomplishments [OSTI]

    Herschbach, D. R.; Laurie, V. W.

    1961-01-01

    Empirical study of cubic and quartic vibrational force constants for diatomic molecules shows them to be approximately exponential functions of internuclear distance. A family of curves is obtained, determined by the location of the bonded atoms in rows of the periodic table. Displacements between successive curves correspond closely to those in Badger's rule for quadratic force constants (for which the parameters are redetermined to accord with all data now available). Constants for excited electronic and ionic states appear on practically the same curves as those for the ground states. Predictions based on the diatomic correlations agree with the available cubic constants for bond stretching in polyatomic molecules, regardless of the type of bonding involved. Implications of these regularities are discussed. (auth)

  17. Metal-bonded, carbon fiber-reinforced composites

    DOE Patents [OSTI]

    Sastri, Suri A. (Lexington, MA); Pemsler, J. Paul (Lexington, MA); Cooke, Richard A. (Framingham, MA); Litchfield, John K. (Bedford, MA); Smith, Mark B. (Ipswich, MA)

    1996-01-01

    Metal bonded carbon fiber-reinforced composites are disclosed in which the metal and the composite are strongly bound by (1) providing a matrix-depleted zone in the composite of sufficient depth to provide a binding site for the metal to be bonded and then (2) infiltrating the metal into the matrix-free zone to fill a substantial portion of the zone and also provide a surface layer of metal, thereby forming a strong bond between the composite and the metal. The invention also includes the metal-bound composite itself, as well as the provision of a coating over the metal for high-temperature performance or for joining to other such composites or to other substrates.

  18. Metal-bonded, carbon fiber-reinforced composites

    DOE Patents [OSTI]

    Sastri, S.A.; Pemsler, J.P.; Cooke, R.A.; Litchfield, J.K.; Smith, M.B.

    1996-03-05

    Metal bonded carbon fiber-reinforced composites are disclosed in which the metal and the composite are strongly bound by (1) providing a matrix-depleted zone in the composite of sufficient depth to provide a binding site for the metal to be bonded and then (2) infiltrating the metal into the matrix-free zone to fill a substantial portion of the zone and also provide a surface layer of metal, thereby forming a strong bond between the composite and the metal. The invention also includes the metal-bound composite itself, as well as the provision of a coating over the metal for high-temperature performance or for joining to other such composites or to other substrates. 2 figs.

  19. Rhodium-Catalyzed C-C Bond Formation via Heteroatom-Directed C-H Bond Activation

    SciTech Connect (OSTI)

    Colby, Denise; Bergman, Robert; Ellman, Jonathan

    2010-05-13

    Once considered the 'holy grail' of organometallic chemistry, synthetically useful reactions employing C-H bond activation have increasingly been developed and applied to natural product and drug synthesis over the past decade. The ubiquity and relative low cost of hydrocarbons makes C-H bond functionalization an attractive alternative to classical C-C bond forming reactions such as cross-coupling, which require organohalides and organometallic reagents. In addition to providing an atom economical alternative to standard cross - coupling strategies, C-H bond functionalization also reduces the production of toxic by-products, thereby contributing to the growing field of reactions with decreased environmental impact. In the area of C-C bond forming reactions that proceed via a C-H activation mechanism, rhodium catalysts stand out for their functional group tolerance and wide range of synthetic utility. Over the course of the last decade, many Rh-catalyzed methods for heteroatom-directed C-H bond functionalization have been reported and will be the focus of this review. Material appearing in the literature prior to 2001 has been reviewed previously and will only be introduced as background when necessary. The synthesis of complex molecules from relatively simple precursors has long been a goal for many organic chemists. The ability to selectively functionalize a molecule with minimal pre-activation can streamline syntheses and expand the opportunities to explore the utility of complex molecules in areas ranging from the pharmaceutical industry to materials science. Indeed, the issue of selectivity is paramount in the development of all C-H bond functionalization methods. Several groups have developed elegant approaches towards achieving selectivity in molecules that possess many sterically and electronically similar C-H bonds. Many of these approaches are discussed in detail in the accompanying articles in this special issue of Chemical Reviews. One approach that has seen widespread success involves the use of a proximal heteroatom that serves as a directing group for the selective functionalization of a specific C-H bond. In a survey of examples of heteroatom-directed Rh catalysis, two mechanistically distinct reaction pathways are revealed. In one case, the heteroatom acts as a chelator to bind the Rh catalyst, facilitating reactivity at a proximal site. In this case, the formation of a five-membered metallacycle provides a favorable driving force in inducing reactivity at the desired location. In the other case, the heteroatom initially coordinates the Rh catalyst and then acts to stabilize the formation of a metal-carbon bond at a proximal site. A true test of the utility of a synthetic method is in its application to the synthesis of natural products or complex molecules. Several groups have demonstrated the applicability of C-H bond functionalization reactions towards complex molecule synthesis. Target-oriented synthesis provides a platform to test the effectiveness of a method in unique chemical and steric environments. In this respect, Rh-catalyzed methods for C-H bond functionalization stand out, with several syntheses being described in the literature that utilize C-H bond functionalization in a key step. These syntheses are highlighted following the discussion of the method they employ.

  20. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  1. Nearly Equivalent Inter- and Intramolecular Hydrogen Bonding in

    Office of Scientific and Technical Information (OSTI)

    1,3,5-Triamino-2,4,6-trinitrobenzene at High Pressure (Journal Article) | SciTech Connect Nearly Equivalent Inter- and Intramolecular Hydrogen Bonding in 1,3,5-Triamino-2,4,6-trinitrobenzene at High Pressure Citation Details In-Document Search Title: Nearly Equivalent Inter- and Intramolecular Hydrogen Bonding in 1,3,5-Triamino-2,4,6-trinitrobenzene at High Pressure Authors: Manaa, M R ; Fried, L E Publication Date: 2011-10-24 OSTI Identifier: 1226974 Report Number(s): LLNL-JRNL-508473

  2. Bond Amendment, Security Clearances - January 1, 2008 | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Bond Amendment, Security Clearances - January 1, 2008 Bond Amendment, Security Clearances - January 1, 2008 January 1, 2008 In General.-Title III of the Intelligence Reform and Terrorism Prevention Act of 2004 (50 U.S.C. 435b) is amended by adding at the end the following new section: "SEC. 3002. SECURITY CLEARANCES; LIMITATIONS SEC. 1072. SECURITY CLEARANCES; LIMITATIONS. (a) In General.-Title III of the Intelligence Reform and Terrorism Prevention Act of 2004 (50 U.S.C. 435b)

  3. Reversible Sigma C-C Bond Formation Between Phenanthroline Ligands

    Office of Scientific and Technical Information (OSTI)

    Activated by (C5Me5)2Yb (Journal Article) | SciTech Connect Reversible Sigma C-C Bond Formation Between Phenanthroline Ligands Activated by (C5Me5)2Yb Citation Details In-Document Search Title: Reversible Sigma C-C Bond Formation Between Phenanthroline Ligands Activated by (C5Me5)2Yb The electronic structure and associated magnetic properties of the 1,10-phenanthroline adducts of Cp*2Yb are dramatically different from those of the 2,2?-bipyridine adducts. The monomeric phenanthroline adducts

  4. Methods and system for controlled laser-driven explosive bonding

    DOE Patents [OSTI]

    Rubenchik, Alexander M.; Farmer, Joseph C.; Hackel, Lloyd; Rankin, Jon

    2015-11-19

    A technique for bonding two dissimilar materials includes positioning a second material over a first material at an oblique angle and applying a tamping layer over the second martial. A laser beam is directed at the second material that generates a plasma at the location of impact on the second material. The plasma generates pressure that accelerates a portion of the second material to a very high velocity and towards the first material. The second material impacts the first material causing bonding of the two materials.

  5. Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2

    SciTech Connect (OSTI)

    Hongpinyo, V; Ding, Y H; Dimas, C E; Wang, Y; Ooi, B S; Qiu, W; Goddard, L L; Behymer, E M; Cole, G D; Bond, T C

    2008-06-11

    The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.

  6. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore » the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  7. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect (OSTI)

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  8. Laser Gain and Threshold Properties in Compressive-Strained and Lattice-Matched GaInNAs/GaAs Quantum Wells

    SciTech Connect (OSTI)

    Chow, W.W.; Jones, E.D.; Modine, N.A.; Allerman, A.A.; Kurtz, S.R.

    1999-08-04

    The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GAInNAs/GaAs laser structures.

  9. Radiation resistance of GaAs-GaAlAs vertical cavity surface emitting lasers

    SciTech Connect (OSTI)

    Jabbour, J.; Zazoui, M.; Sun, G.C.; Bourgoin, J.C.; Gilard, O.

    2005-02-15

    The variations of the optical and electrical characteristics of a vertical cavity surface emitting laser based on GaAs quantum wells have been monitored versus irradiation with 1 MeV electrons. The results are understood by the introduction of nonradiative recombination centers in the wells whose characteristics, capture cross section for minority carriers times their introduction rate, can be determined. A similar study performed for proton irradiation shows that the results can be explained in the same way when the introduction rate of the defects is replaced by the proton energy loss into atomic collisions. These results allow us to deduce the equivalence between electron and proton irradiations: A flux of 1 proton cm{sup -2} which loses an energy E{sub nl} (eV) into atomic collisions is equivalent to a fluence of about 9x10{sup -2} E{sub nl} cm{sup -2}, 1 MeV electrons.

  10. Vertical zone melt growth of GaAs

    SciTech Connect (OSTI)

    Henry, R.L.; Nordquist, P.E.R.; Gorman, R.J.

    1993-12-31

    A Vertical Zone Melt (VZM) technique has been applied to the single crystal growth of GaAs. A pyrolytic boron nitride crucible and a (100) oriented seed were used along with liquid encapsulation by boric oxide. In the case of GaAs, the ampoule was pressurized with either argon or argensic vapor from elemental arsenic at pressures ranging from 1 to 2 atmospheres. A molten zone length of 22 mm gave a growth interface which is nearly flat and resulted in routine single crystal growth. Temperature gradients of 4{degrees}C/cm. and 9{degrees}C/cm. have produced dislocation densities of <1000/cm{sup 2} and 2000-5000/cm{sup 2} respectively for 34 mm diameter crystals of GaAs. Post growth cooling rates for GaAs have been 35, 160 and 500{degrees}C/hr. The cooling rate has been found to affect the number and size of arsenic precipitates and the EL2 concentration in the GaAs crystal. The effects of these and other growth parameters on the crystalline perfection and electrical properties of the crystals will be discussed.

  11. Bonded polyimide fuel cell package and method thereof

    DOE Patents [OSTI]

    Morse, Jeffrey D.; Jankowski, Alan; Graff, Robert T.; Bettencourt, Kerry

    2005-11-01

    Described herein are processes for fabricating microfluidic fuel cell systems with embedded components in which micron-scale features are formed by bonding layers of DuPont Kapton.TM. polyimide laminate. A microfluidic fuel cell system fabricated using this process is also described.

  12. Method of preparation of bonded polyimide fuel cell package

    SciTech Connect (OSTI)

    Morse, Jeffrey D.; Jankowski, Alan; Graff, Robert T.; Bettencourt, Kerry

    2011-04-26

    Described herein are processes for fabricating microfluidic fuel cell systems with embedded components in which micron-scale features are formed by bonding layers of DuPont Kapton.TM. polyimide laminate. A microfluidic fuel cell system fabricated using this process is also described.

  13. BN Bonded BN fiber article from boric oxide fiber

    DOE Patents [OSTI]

    Hamilton, Robert S.

    1978-12-19

    A boron nitride bonded boron nitride fiber article and the method for its manufacture which comprises forming a shaped article with a composition comprising boron oxide fibers and boric acid, heating the composition in an anhydrous gas to a temperature above the melting point of the boric acid and nitriding the resulting article in ammonia gas.

  14. Process for protecting bonded components from plating shorts

    DOE Patents [OSTI]

    Tarte, Lisa A.; Bonde, Wayne L.; Carey, Paul G.; Contolini, Robert J.; McCarthy, Anthony M.

    2000-01-01

    A method which protects the region between a component and the substrate onto which the components is bonded using an electrically insulating fillet of photoresist. The fillet protects the regions from subsequent plating with metal and therefore shorting the plated conductors which run down the sides of the component and onto the substrate.

  15. Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

    SciTech Connect (OSTI)

    Schmidt, Gordon Mller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jrgen; Glauser, Marlene; Carlin, Jean-Franois; Cosendey, Gatien; Butt, Raphal; Grandjean, Nicolas

    2014-07-21

    Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

  16. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    SciTech Connect (OSTI)

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-26

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency ({eta}{sub TPV}) and a power density (PD) of {eta}{sub TPV} = 19% and PD=0.58 W/cm{sup 2} were measured for T{sub radiator} = 950 C and T{sub diode} = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be {eta}{sub TPV} = 26% and PD = 0.75 W/cm{sup 2}. These limits are extended to {eta}{sub TPV} = 30% and PD = 0.85W/cm{sup 2} if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are {approx}10% lower than the predicted semi-empirical limit to open circuit voltage for a device having absorbing substrate; the voltages are {approx}17% below that for an Auger-limited device having back surface reflector and two-pass optical design.

  17. Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240350?nm emission

    SciTech Connect (OSTI)

    Himwas, C.; Hertog, M. den; Dang, Le Si; Songmuang, R.; Monroy, E.

    2014-12-15

    We present structural and optical studies of AlGaN sections and AlGaN/AlN nanodisks (NDs) in nanowires grown by plasma-assisted molecular beam epitaxy. The Al-Ga intermixing at Al(Ga)N/GaN interfaces and the chemical inhomogeneity in AlGaN NDs evidenced by scanning transmission electron microscopy are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with the Al content, leading to enhanced carrier localization signatures in the luminescence characteristics, i.e., red shift of the emission, s-shaped temperature dependence, and linewidth broadening. Despite these effects, the emission energy of AlGaN/AlN NDs can be tuned in the 240350?nm range with internal quantum efficiencies around 30%.

  18. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect (OSTI)

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  19. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect (OSTI)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  20. Simple intrinsic defects in GaAs : numerical supplement.

    SciTech Connect (OSTI)

    Schultz, Peter Andrew

    2012-04-01

    This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

  1. Electronic contribution to friction on GaAs

    SciTech Connect (OSTI)

    Applied Science and Technology Graduate Group, UC Berkeley; Dept. of Materials Sciences and Engineering, UC Berkeley; Salmeron, Miquel; Qi, Yabing; Park, J.Y.; Hendriksen, B.L.M.; Ogletree, D.F.; Salmeron, Miquel

    2008-04-15

    The electronic contribution to friction at semiconductor surfaces was investigated by using a Pt-coated tip with 50nm radius in an atomic force microscope sliding against an n-type GaAs(100) substrate. The GaAs surface was covered by an approximately 1 nm thick oxide layer. Charge accumulation or depletion was induced by the application of forward or reverse bias voltages. We observed a substantial increase in friction force in accumulation (forward bias) with respect to depletion (reverse bias). We propose a model based on the force exerted by the trapped charges that quantitatively explains the experimental observations of excess friction.

  2. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-01

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

  3. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-15

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

  4. High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

    SciTech Connect (OSTI)

    Young, N. G. Farrell, R. M.; Iza, M.; Speck, J. S.; Perl, E. E.; Keller, S.; Bowers, J. E.; Nakamura, S.; DenBaars, S. P.

    2014-04-21

    We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

  5. Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Edmunds, C.; Malis, O.; Shao, J.; Shirazi-HD, M.; Manfra, M. J.

    2014-07-14

    We demonstrate THz intersubband absorption (15.6–26.1 meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14 meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a ∼40% reduction in the linewidth (from roughly 8 to 5 meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

  6. Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

    SciTech Connect (OSTI)

    Zhang, Jingyun; Si, Mengwei; Wu, Heng; Ye, Peide D.; Lou, Xiabing; Gordon, Roy G.; Shao, Jiayi; Manfra, Michael J.

    2015-02-16

    Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La{sub 2}O{sub 3} as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an I{sub ON}/I{sub OFF} ratio of greater than 10{sup 7}.

  7. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

    SciTech Connect (OSTI)

    Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko; Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel; Garcia, Alipio

    2009-06-08

    We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

  8. Fabrication and Characterization of a Single Hole Transistor in p-type GaAs/AlGaAs Heterostructures

    SciTech Connect (OSTI)

    Tracy, Lisa A; Reno, John L.; Hargett, Terry W.

    2015-09-01

    Most spin qubit research to date has focused on manipulating single electron spins in quantum dots. However, hole spins are predicted to have some advantages over electron spins, such as reduced coupling to host semiconductor nuclear spins and the ability to control hole spins electrically using the large spin-orbit interaction. Building on recent advances in fabricating high-mobility 2D hole systems in GaAs/AlGaAs heterostructures at Sandia, we fabricate and characterize single hole transistors in GaAs. We demonstrate p-type double quantum dot devices with few-hole occupation, which could be used to study the physics of individual hole spins and control over coupling between hole spins, looking towards eventual applications in quantum computing. Intentionally left blank

  9. Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets

    SciTech Connect (OSTI)

    Chu, Kuei-Yi; Chiang, Meng-Hsueh Cheng, Shiou-Ying; Liu, Wen-Chau

    2012-02-15

    Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

  10. Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

    SciTech Connect (OSTI)

    Hu, J. Groeseneken, G.; Stoffels, S.; Lenci, S.; Venegas, R.; Decoutere, S.; Bakeroot, B.

    2015-02-23

    This paper presents a combined technique of high voltage off-state stress and current transient measurements to investigate the trapping/de-trapping characteristics of Au-free AlGaN/GaN Schottky barrier diodes. The device features a symmetric three-terminal structure with a central anode contact surrounded by two separate cathodes. Under the diode off-state stress conditions, the two separate cathodes were electrically shorted. The de-trapping dynamics was studied by monitoring the recovery of the two-dimensional electron gas (2DEG) current at different temperatures by applying 0.5?V at cathode 2 while grounding cathode 1. During the recovery, the anode contact acts as a sensor of changes in diode leakage current. This leakage variation was found to be mainly due to the barrier height variation. With this method, the energy level and capture cross section of different traps in the AlGaN/GaN Schottky barrier diode can be extracted. Furthermore, the physical location of different trapping phenomena is indicated by studying the variation of the diode leakage current during the recovery. We have identified two distinct trapping mechanisms: (i) electron trapping at the AlGaN surface in the vicinity of the Schottky contact which results in the leakage reduction (barrier height ?{sub B} increase) together with R{sub ON} degradation; (ii) the electron trapping in the GaN channel layer which partially depletes the 2DEG. The physical origin of the two different traps is discussed in the text.

  11. Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice

    SciTech Connect (OSTI)

    Sobolev, M. M. Buyalo, M. S.; Nevedomskiy, V. N.; Zadiranov, Yu. M.; Zolotareva, R. V.; Vasil’ev, A. P.; Ustinov, V. M.; Portnoi, E. L.

    2015-10-15

    The spectral characteristics of a laser with an active region based on a ten-layer system of In(Ga)As/GaAs vertically correlated quantum dots with 4.5-nm GaAs spacer layers between InAs quantum dots are studied under the conditions of spontaneous and stimulated emission, depending on the current and the duration of pump pulses. Data obtained by transmission electron microscopy and electroluminescence and absorption polarization anisotropy measurements make it possible to demonstrate that the investigated system of tunnel-coupled InAs quantum dots separated by thin GaAs barriers represents a quantum-dot superlattice. With an increase in the laser pump current, the electroluminescence intensity increases linearly and the spectral position of the electroluminescence maximum shifts to higher energies, which is caused by the dependence of the miniband density-of-states distribution on the pump current. Upon exceeding the threshold current, multimode lasing via the miniband ground state is observed. One of the lasing modes can be attributed to the zero-phonon line, and the other is determined by the longitudinal-optical phonon replica of quantum-dot emission. The results obtained give evidence that, under conditions of the laser pumping of an In(Ga)As/GaAs quantum-dot superlattice, strong coupling between the discrete electron states in the miniband and optical phonons takes place. This leads to the formation of quantum-dot polarons, resulting from the resonant mixing of electronic states whose energy separation is comparable to the optical-phonon energy.

  12. InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

    SciTech Connect (OSTI)

    Alonso-lvarez, D.; Thomas, T.; Fhrer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.

    2014-08-25

    Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6 misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1??s, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

  13. Defect-Reduction Mechanism for Improving Radiative Efficiency in InGaN/GaN Light-Emitting Diodes using InGaN Underlayers

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Armstrong, Andrew M.; Bryant, Benjamin N.; Crawford, Mary H.; Koleske, Daniel D.; Lee, Stephen R.; Wierer, Jr., Jonathan J.

    2015-04-01

    The influence of a dilute InxGa1-xN (x~0.03) underlayer (UL) grown below a single In0.16Ga0.84N quantum well (SQW), within a light-emitting diode(LED), on the radiative efficiency and deep level defect properties was studied using differential carrier lifetime (DCL) measurements and deep level optical spectroscopy (DLOS). DCL measurements found that inclusion of the UL significantly improved LED radiative efficiency. At low current densities, the non-radiative recombination rate of the LED with an UL was found to be 3.9 times lower than theLED without an UL, while the radiative recombination rates were nearly identical. This, then, suggests that the improved radiative efficiency resultedmore » from reduced non-radiative defect concentration within the SQW. DLOS measurement found the same type of defects in the InGaN SQWs with and without ULs. However, lighted capacitance-voltage measurements of the LEDs revealed a 3.4 times reduction in a SQW-related near-mid-gap defect state for the LED with an UL. Furthermore, quantitative agreement in the reduction of both the non-radiative recombination rate (3.9×) and deep level density (3.4×) upon insertion of an UL corroborates deep level defect reduction as the mechanism for improved LED efficiency.« less

  14. Properties of H, O and C in GaN

    SciTech Connect (OSTI)

    Pearton, S.J.; Abernathy, C.R.; Lee, J.W.

    1996-04-01

    The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

  15. Characterization of Fuel-Cladding Bond Strength Using Laser Shock

    SciTech Connect (OSTI)

    James A. Smith; David L. Cottle; Barry H. Rabin

    2014-04-01

    This paper describes new laser-based capabilities for characterization of fuel-cladding bond strength in nuclear fuels, and presents preliminary results obtained from studies on as-fabricated monolithic fuel consisting of uranium-10 wt.% molybdenum alloys clad in 6061 aluminum by hot isostatic pressing. Two complementary experimental methods are employed, laser-shock testing and laser-ultrasonic imaging. Measurements are spatially localized, non-contacting and require minimum specimen preparation, and are therefore ideally suited for applications involving radioactive materials, including irradiated materials. The theoretical principles and experimental approaches employed in characterization of nuclear fuel plates are described. The ability to measure layer thicknesses, elastic properties of the constituents, and the location and nature of laser-shock induced debonds is demonstrated, and preliminary bond strength measurement results are discussed.

  16. Wafer bonded virtual substrate and method for forming the same

    DOE Patents [OSTI]

    Atwater, Jr., Harry A.; Zahler, James M.; Morral, Anna Fontcuberta i

    2007-07-03

    A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle substrate, improving or increasing the mechanical strength of the device and handle substrates, and thinning the device substrate to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. The handle substrate is typically Si or other inexpensive common substrate material, while the optoelectronic device substrate is formed of more expensive and specialized electro-optic material. Using the methodology of the invention a wide variety of thin film electro-optic materials of high quality can be bonded to inexpensive substrates which serve as the mechanical support for an optoelectronic device layer fabricated in the thin film electro-optic material.

  17. Bond strength and stress measurements in thermal barrier coatings

    SciTech Connect (OSTI)

    Gell, M.; Jordan, E.

    1995-12-31

    Thermal barrier coatings have been used extensively in aircraft gas turbines for more than 15 years to insulate combustors and turbine vanes from the hot gas stream. Plasma sprayed thermal barrier coatings (TBCs) provide metal temperature reductions as much as 300{degrees}F, with improvements in durability of two times or more being achieved. The introduction of TBCs deposited by electron beam physical vapor deposition (EB-PVD) processes in the last five years has provided a major improvement in durability and also enabled TBCs to be applied to turbine blades for improved engine performance. This program evaluates the bond strength of yttria stabilized zirconia coatings with MCrAlY and Pt-Al bond coats utilizing diffraction and fluorescence methods.

  18. Hydrogen Adsorption Induces Interlayer Carbon Bond Formation in Supported

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Few-Layer Graphene | Stanford Synchrotron Radiation Lightsource Hydrogen Adsorption Induces Interlayer Carbon Bond Formation in Supported Few-Layer Graphene Friday, February 28, 2014 Among the allotropes of carbon, diamond has some of the most remarkable physical properties of any material in terms of hardness, stiffness, thermal conductivity, transparency and chemical inertness1. Graphite, which is the most thermodynamically stable form of carbon at room temperature and at ambient

  19. Compacting Plastic-Bonded Explosive Molding Powders to Dense Solids

    SciTech Connect (OSTI)

    B. Olinger

    2005-04-15

    Dense solid high explosives are made by compacting plastic-bonded explosive molding powders with high pressures and temperatures for extended periods of time. The density is influenced by manufacturing processes of the powders, compaction temperature, the magnitude of compaction pressure, pressure duration, and number of repeated applications of pressure. The internal density variation of compacted explosives depends on method of compaction and the material being compacted.

  20. Cold bond agglomeration of waste oxides for recycling

    SciTech Connect (OSTI)

    D`Alessio, G.; Lu, W.K.

    1996-12-31

    Recycling of waste oxides has been an on-going challenge for integrated steel plants. The majority of these waste oxides are collected from the cleaning systems of ironmaking and steelmaking processes, and are usually in the form of fine particulates and slurries. In most cases, these waste materials are contaminated by oils and heavy metals and often require treatment at a considerable expense prior to landfill disposal. This contamination also limits the re-use or recycling potential of these oxides as secondary resources of reliable quality. However, recycling of some selected wastes in blast furnaces or steelmaking vessels is possible, but first requires agglomeration of the fine particulate by such methods as cold bond briquetting. Cold bond briquetting technology provides both mechanical compacting and bonding (with appropriate binders) of the particulates. This method of recycling has the potential to be economically viable and environmentally sustainable. The nature of the present study is cold bond briquetting of iron ore pellet fines with a molasses-cement-H{sub 2}O binder for recycling in a blast furnace. The inclusion of molasses is for its contribution to the green strength of briquettes. During the curing stage, significant gains in strength may be credited to molasses in the presence of cement. The interactions of cement (and its substitutes), water and molasses and their effects on the properties of the agglomerates during and after various curing conditions were investigated. Tensile strengths of briquettes made in the laboratory and subjected to experimental conditions which simulated the top part of a blast furnace shaft were also examined.

  1. Fluorinated diamond particles bonded in a filled fluorocarbon resin matrix

    DOE Patents [OSTI]

    Taylor, G.W.; Roybal, H.E.

    1983-11-14

    A method of producing fluorinated diamond particles bonded in a filled fluorocarbon resin matrix. Simple hot pressing techniques permit the formation of such matrices from which diamond impregnated grinding tools and other articles of manufacture can be produced. Teflon fluorocarbon resins filled with Al/sub 2/O/sub 3/ yield grinding tools with substantially improved work-to-wear ratios over grinding wheels known in the art.

  2. Fluorinated diamond particles bonded in a filled fluorocarbon resin matrix

    DOE Patents [OSTI]

    Taylor, Gene W.; Roybal, Herman E.

    1985-01-01

    A method of producing fluorinated diamond particles bonded in a filled fluorocarbon resin matrix. Simple hot pressing techniques permit the formation of such matrices from which diamond impregnated grinding tools and other articles of manufacture can be produced. Teflon fluorocarbon resins filled with Al.sub.2 O.sub.3 yield grinding tools with substantially improved work-to-wear ratios over grinding wheels known in the art.

  3. Oxford Area Community School District (Michigan) Bonds Case Study

    Broader source: Energy.gov [DOE]

    Michigans Oxford Area Community School District entered into an energy savings performance contract and issued limited tax general obligation bonds to fund the up-front costs of almost $3 million of energy-related improvements. Case study is excerpted from Financing Energy Upgrades for K-12 School Districts: A Guide to Tapping into Funding for Energy Efficiency and Renewable Energy Improvements. Author: Merrian Borgeson and Mark Zimring

  4. Testing a GaAs cathode in SRF gun

    SciTech Connect (OSTI)

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-03-28

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating gradient of the RF guns, potentially offering a long lived cathode with very low emittance. Testing this concept requires preparation of the cathode, transportation to the SRF gun and evaluation of the performance of the cathode and the gun at cryogenic temperatures. In our work at BNL, we successfully activated the bulk GaAs in the preparation chamber. The highest quantum efficient was 10% at 532 nm that fell to 0.5% after 100 hours. We explored three different ways to activate the GaAs. We verified that the GaAs photocathode remains stable for 30 hours in a 10{sup -11} Torr vacuum. Passing the photocathode through the low 10{sup -9} Torr transfer section in several seconds caused the QE to drop to 0.8%. The photocathode with 0.8% QE can be tested for the SRF gun. The gun and beam pipe were prepared and assembled. After baking at 200 C baking, the vacuum of the gun and beam pipe can sustain a low 10{sup -11} Torr at room temperature. The final test to extract electrons from the gun is ongoing. In this paper, we discuss our progress with this SRF gun and the results of the photocathode in preparation chamber and in magnet transfer line.

  5. Cu-Cu direct bonding achieved by surface method at room temperature

    SciTech Connect (OSTI)

    Utsumi, Jun [Advanced Technology Research Center, Mitsubishi Heavy Industries, Ltd., 1-8-1 Sachiura, Kanazawa-ku, Yokohama 236-8515 (Japan); Ichiyanagi, Yuko, E-mail: yuko@ynu.ac.jp [Department of Physics, Graduate School of Engineering, Yokohama National University, Tokiwadai, Hodogaya, Yokohama 240-8501 (Japan)

    2014-02-20

    The metal bonding is a key technology in the processes for the microelectromechanical systems (MEMS) devices and the semiconductor devices to improve functionality and higher density integration. Strong adhesion between surfaces at the atomic level is crucial; however, it is difficult to achieve close bonding in such a system. Cu films were deposited on Si substrates by vacuum deposition, and then, two Cu films were bonded directly by means of surface activated bonding (SAB) at room temperature. The two Cu films, with the surface roughness Ra about 1.3nm, were bonded by using SAB at room temperature, however, the bonding strength was very weak in this method. In order to improve the bonding strength between the Cu films, samples were annealed at low temperatures, between 323 and 473 K, in air. As the result, the Cu-Cu bonding strength was 10 times higher than that of the original samples without annealing.

  6. Chemical Bonding In Amorphous Si Coated-carbon Nanotube As Anodes...

    Office of Scientific and Technical Information (OSTI)

    Chemical Bonding In Amorphous Si Coated-carbon Nanotube As Anodes For Li ion Batteries: A XANES Study Citation Details In-Document Search Title: Chemical Bonding In Amorphous Si ...

  7. Contrasting Behavior of GaP(001) and InP(001) at the Interface...

    Office of Scientific and Technical Information (OSTI)

    Contrasting Behavior of GaP(001) and InP(001) at the Interface with Water Citation Details In-Document Search Title: Contrasting Behavior of GaP(001) and InP(001) at the Interface ...

  8. Electron-limiting defect complex in hyperdoped GaAs: The D D...

    Office of Scientific and Technical Information (OSTI)

    Electron-limiting defect complex in hyperdoped GaAs: The D D X center Prev Next Title: Electron-limiting defect complex in hyperdoped GaAs: The D D X center Authors: Ma, Jie ...

  9. Coexistence of charge-density wave and ferromagnetism in Ni2MnGa...

    Office of Scientific and Technical Information (OSTI)

    Coexistence of charge-density wave and ferromagnetism in Ni2MnGa Citation Details In-Document Search Title: Coexistence of charge-density wave and ferromagnetism in Ni2MnGa ...

  10. Bismuth-induced phase control of GaAs nanowires grown by molecular...

    Office of Scientific and Technical Information (OSTI)

    Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy Citation Details In-Document Search Title: Bismuth-induced phase control of GaAs nanowires grown by ...

  11. Site-controlled fabrication of Ga nanodroplets by focused ion beam

    SciTech Connect (OSTI)

    Xu, Xingliang; Wang, Zhiming M.; Wu, Jiang; Li, Handong; Zhou, Zhihua; Wang, Xiaodong

    2014-03-31

    Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

  12. Ge doped GaN with controllable high carrier concentration for...

    Office of Scientific and Technical Information (OSTI)

    Ge doped GaN with controllable high carrier concentration for plasmonic applications Citation Details In-Document Search Title: Ge doped GaN with controllable high carrier...

  13. Reactive codoping of GaAlInP compound semiconductors (Patent...

    Office of Scientific and Technical Information (OSTI)

    This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and ... A GaAlInP compound semiconductor and a method of producing a GaAlInP compound ...

  14. Vacuum fusion bonded glass plates having microstructures thereon

    DOE Patents [OSTI]

    Swierkowski, Steve P.; Davidson, James C.; Balch, Joseph W.

    2001-01-01

    An improved apparatus and method for vacuum fusion bonding of large, patterned glass plates. One or both glass plates are patterned with etched features such as microstructure capillaries and a vacuum pumpout moat, with one plate having at least one hole therethrough for communication with a vacuum pumpout fixture. High accuracy alignment of the plates is accomplished by a temporary clamping fixture until the start of the fusion bonding heat cycle. A complete, void-free fusion bond of seamless, full-strength quality is obtained through the plates; because the glass is heated well into its softening point and because of a large, distributed force that is developed that presses the two plates together from the difference in pressure between the furnace ambient (high pressure) and the channeling and microstructures in the plates (low pressure) due to the vacuum drawn. The apparatus and method may be used to fabricate microcapillary arrays for chemical electrophoresis; for example, any apparatus using a network of microfluidic channels embedded between plates of glass or similar moderate melting point substrates with a gradual softening point curve, or for assembly of glass-based substrates onto larger substrates, such as in flat panel display systems.

  15. Bonding energies and long-range order in the trialuminides

    SciTech Connect (OSTI)

    Sparks, C.J.; Specht, E.D.; Ice, G.E.; Zschack, P.; Schneibel, J.

    1990-01-01

    The degree of long-range order in the trialuminides is determined by X-ray powder diffraction techniques. Long-range order exists to their melting points. For the binary trialuminides Al{sub 3}Ti, Al{sub 73}Ti{sub 27}, and Al{sub 3}Sc, the degree of long-range order is nearly perfect and is a measure of the lack of mixing of the aluminum atoms onto the sublattice occupied by either Ti or Sc. A calculation of the bond energy between neighboring pairs of atoms from the ordering (melting) temperature is made following the Bragg-Williams mean field theory approach. These bond energies compare favorably with more sophisticated calculations. Bond energies are found to be larger than the energy difference between the crystal structure forms DO{sub 22}, Ll{sub 2}, and DO{sub 23}, and therefore, more relevant to understanding the mechanical and chemical behavior of the trialuminides. Ordering or melting temperatures of these intermetallics reflect the strong Al-metal near-neighbor pair potentials and may provide insights to their brittle properties. 11 refs., 2 figs., 2 tabs.

  16. The differnces between bond lengths in biogenic and geologocal calcite.

    SciTech Connect (OSTI)

    Zlotoyabko, E.; Caspi, E. N.; Fieramosca, J. S.; Von Dreele, R. B.; Marin, F.; Mor, G.; Politi, Y.; Addadi, L.; Weiner, S.

    2010-01-01

    We used high-resolution neutron powder diffraction to accurately measure the atomic positions and bond lengths in biogenic and geological calcite. A special procedure for data analysis was developed in order to take into account the considerable amounts of magnesium present in all the investigated samples. As a result, in biogenic calcite we found some atomic bonds to have significantly different lengths as compared to those in geological calcite, after the contribution of magnesium is accounted for. The maximum effect (elongation up to 0.7%) was found for the C-O bonds. We also analyzed changes in frequencies and spectral widths of normal vibrations of carbonate groups in biogenic calcite (as compared to geological calcite) measured by Raman and Fourier transform IR techniques. Surprisingly, the frequency shifts after subtracting the magnesium contribution are close to zero. At the same time, substantial spectral broadening (up to 1.2%) in biogenic calcite as compared to geological samples was detected. Possible explanations for the experimental findings are discussed.

  17. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  18. Influence of Ga content on the structure and anomalous Hall effect of Fe{sub 1−x}Ga{sub x} thin films on GaSb(100)

    SciTech Connect (OSTI)

    Anh Tuan, Duong; Shin, Yooleemi; Viet Cuong, Tran; Cho, Sunglae; Phan, The-Long

    2014-05-07

    The Fe{sub 1−x}Ga{sub x} thin films (x = 0.4, 0.5) have been grown on GaSb(100) substrate using molecular beam epitaxy. An epitaxial film with bcc α-Fe crystal structure (A2) is observed in Fe{sub 0.6}Ga{sub 0.4} film, while an impure Fe{sub 3}Ga phase with DO{sub 3} structure is appeared in Fe{sub 0.5}Ga{sub 0.5} film. The saturated magnetizations at room temperature are observed to be 570 emu/cm{sup 3} and 180 emu/cm{sup 3} and the coercivities to be 170 and 364 Oe for Fe{sub 0.6}Ga{sub 0.4} and Fe{sub 0.5}Ga{sub 0.5}, respectively. A hysteresis trend in Hall resistance vs. magnetic field is observed for Fe{sub 0.5}Ga{sub 0.5} film. However, there is a weak hysteresis noticed in Fe{sub 0.4}Ga{sub 0.6} thin film.

  19. Zirconium Catalyst Follows a Low Energy Pathway for Carbon-Nitrogen Bond

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Formation | The Ames Laboratory Zirconium Catalyst Follows a Low Energy Pathway for Carbon-Nitrogen Bond Formation Chemists have synthesized a highly selective and highly efficient zirconium catalyst that makes new carbon-nitrogen bonds by adding a nitrogen-hydrogen bond to a carbon-carbon double bond. Nitrogen-containing chemicals are important as agrichemicals, pharmaceuticals, and specialty chemicals. These zirconium catalysts are expected to show greater tolerance to other functionality

  20. Zirconium Catalyst Follows a Low Energy Pathway for Carbon-Nitrogen Bond

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Formation | The Ames Laboratory Zirconium Catalyst Follows a Low Energy Pathway for Carbon-Nitrogen Bond Formation Chemists have synthesized a highly selective and highly efficient zirconium catalyst that makes new carbon-nitrogen bonds by adding a nitrogen-hydrogen bond to a carbon-carbon double bond. Nitrogen-containing chemicals are important as agrichemicals, pharmaceuticals, and specialty chemicals. These zirconium catalysts are expected to show greater tolerance to other functionality

  1. Performance and Reliability of Bonded Interfaces for High-Temperature Packaging (Presentation)

    SciTech Connect (OSTI)

    Devoto, D.

    2014-06-01

    This presentation reviews the status of the performance and reliability of bonded interfaces for high-temperature packaging.

  2. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA | Department

    Energy Savers [EERE]

    of Energy 6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA February 8, 2012 EIS-0476: Final Environmental Impact Statement Department of Energy Loan Guarantees for Proposed Units 3 and 4 at the Vogtle Electric Generating Plant, Burke County, GA February 25, 2014 EIS-0476: Record of Decision Department of Energy Loan Guarantees for Proposed Units 3 and 4 at the Vogtle Electric Generating Plant, Burke County, GA

  3. On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Gao, Feng; Chen, Di; Tuller, Harry L.; Thompson, Carl V.; Palacios, Toms

    2014-03-28

    Water-related redox couples in ambient air are identified as an important source of the surface trapping states, dynamic on-resistance, and drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). Through in-situ X-ray photoelectron spectroscopy (XPS), direct signature of the water-related specieshydroxyl groups (OH) was found at the AlGaN surface at room temperature. It was also found that these species, as well as the current collapse, can be thermally removed above 200?C in vacuum conditions. An electron trapping mechanism based on the H{sub 2}O/H{sub 2} and H{sub 2}O/O{sub 2} redox couples is proposed to explain the 0.5?eV energy level commonly attributed to the surface trapping states. Finally, the role of silicon nitride passivation in successfully removing current collapse in these devices is explained by blocking the water molecules away from the AlGaN surface.

  4. Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Bia?ek, M. Witowski, A. M.; Grynberg, M.; ?usakowski, J.; Orlita, M.; Potemski, M.; Czapkiewicz, M.; Umansky, V.

    2014-06-07

    In order to characterize magnetic field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the magnetoplasmon resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

  5. High 400?C operation temperature blue spectrum concentration solar junction in GaInN/GaN

    SciTech Connect (OSTI)

    Zhao, Liang; Detchprohm, Theeradetch; Wetzel, Christian

    2014-12-15

    Transparent wide gap junctions suitable as high temperature, high flux topping cells have been achieved in GaInN/GaN by metal-organic vapor phase epitaxy. In structures of 25 quantum wells (QWs) under AM1.5G illumination, an open circuit voltage of 2.1?V is achieved. Of the photons absorbed in the limited spectral range of <450?nm, 64.2% are converted to electrons collected at the contacts under zero bias. At a fill factor of 45%, they account for a power conversion efficiency of38.6%. Under concentration, the maximum output power density per sun increases from 0.49?mW/cm{sup 2} to 0.51?mW/cm{sup 2} at 40?suns and then falls 0.42?mW/cm{sup 2} at 150?suns. Under external heating, a maximum of 0.59?mW/cm{sup 2} is reached at 250?C. Even at 400?C, the device is fully operational and exceeds room temperature performance. A defect analysis suggests that significantly higher fill factors and extension into longer wavelength ranges are possible with further development. The results prove GaInN/GaN QW solar junctions a viable and rugged topping cell for concentrator photovoltaics with minimal cooling requirements. By capturing the short range spectrum, they reduce the thermal load to any conventional cells stacked behind.

  6. Electrically active Er doping in InAs, In{sub 0.53}Ga{sub 0.47}As, and GaAs

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Electrically active Er doping in InAs, In{sub 0.53}Ga{sub 0.47}As, and GaAs Citation Details In-Document Search Title: Electrically active Er doping in InAs, In{sub 0.53}Ga{sub 0.47}As, and GaAs The electron concentration in dilute alloys of Er in GaAs, In{sub 0.53}Ga{sub 0.47}As, and InAs grown by molecular beam epitaxy is studied as a function of Er concentration and In content. Using first-principles calculations based on hybrid density functional

  7. Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    SciTech Connect (OSTI)

    Cheng, Junjie; Li, Jiadong; Miao, Bin; Wu, Dongmin; Wang, Jine; Pei, Renjun; Wu, Zhengyan

    2014-08-25

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup ?14} to 10{sup ?8} M and a detection limit below 10{sup ?14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

  8. GaN Initiative for Grid Applications (GIGA)

    SciTech Connect (OSTI)

    Turner, George

    2015-07-03

    For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 μm, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and vertical devices were explored, with the conclusion that lateral devices are superior for fundamental thermal reasons, as well as for the demonstration of future generations of monolithic power circuits. As part of the materials and device investigations breakdown mechanisms in GaN-on-Si structures were fully characterized and effective electric field engineering was recognized as critical for achieving even higher voltage operation. Improved device contact technology was demonstrated, including the first gold-free metallizations (to enable processing in CMOS foundries) while maintaining low specific contact resistance needed for high-power operation and 5-order-of magnitude improvement in device leakage currents (essential for high power operation). In addition, initial GaN-on-Si epitaxial growth was performed on 8”/200 mm Si starting substrates.

  9. Electrically active Er doping in InAs, In[sub 0.53]Ga[sub 0.47]As, and GaAs

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Electrically active Er doping in InAs, In[sub 0.53]Ga[sub 0.47]As, and GaAs Citation Details In-Document Search Title: Electrically active Er doping in InAs, In[sub 0.53]Ga[sub 0.47]As, and GaAs Authors: Burke, Peter G. ; Ismer, Lars ; Lu, Hong ; Frantz, Elan ; Janotti, Anderson ; Van de Walle, Chris G. ; Bowers, John E. ; Gossard, Arthur C. Publication Date: 2012-01-01 OSTI Identifier: 1105361 DOE Contract Number: SC0001009 Resource Type: Journal Article

  10. Absorption enhancement through Fabry-Prot resonant modes in a 430?nm thick InGaAs/GaAsP multiple quantum wells solar cell

    SciTech Connect (OSTI)

    Behaghel, B.; Tamaki, R.; Watanabe, K.; Sodabanlu, H.; Vandamme, N.; Dupuis, C.; Bardou, N.; Cattoni, A.; Okada, Y.; Sugiyama, M.; Collin, S.; Guillemoles, J.-F.

    2015-02-23

    We study light management in a 430?nm-thick GaAs p-i-n single junction solar cell with 10 pairs of InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the external quantum efficiency below GaAs bandgap by a factor of four through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 10% conversion efficiency. We demonstrate numerically that this promising result can be further improved by anti-reflection layers. This study paves the way to very thin MQWs solar cells.

  11. Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

    SciTech Connect (OSTI)

    Christy, Dennis; Watanabe, Arata; Egawa, Takashi

    2014-10-15

    The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical measurements, a gradual decrease of two-dimensional electron gas (2DEG) concentration near heterointerface as the function of NL thickness is observed possibly due to the reduction in difference of piezoelectric polarization charge densities between AlGaN and GaN layers. It also indicates that the minimum tensile stress and a relatively less total dislocation density for high pressure grown NL can ensure a 20 % increment in mobility at room temperature irrespective of the interface roughness. The thickness and pressure variations in NL and the subsequent changes in growth mode of AlN contributing to the post growth residual tensile stress are investigated using X-ray diffraction and Raman scattering experiments, respectively. The post growth intrinsic residual stress in top layers of heterostructures arises from lattice mismatches, NL parameters and defect densities in GaN. Hence, efforts to reduce the intrinsic residual stress in current conducting GaN layer give an opportunity to further improve the electrical characteristics of AlGaN/GaN device structures on Si.

  12. Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN

    Office of Scientific and Technical Information (OSTI)

    nanostructure arrays on GaN/sapphire template (Journal Article) | SciTech Connect Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template Citation Details In-Document Search Title: Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template Authors: Sundaram, S. [1] ; Puybaret, R. [2] ; El Gmili, Y. [1] ; Li, X. [2] ; Bonanno, P. L. [1] ; Pantzas, K. [3] Search SciTech

  13. Conductivity based on selective etch for GaN devices and applications thereof

    DOE Patents [OSTI]

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  14. ESR Detection of optical dynamic nuclear polarization in GaAs/Al{sub

    Office of Scientific and Technical Information (OSTI)

    x}Ga{sub 1-x}As quantum wells at unity filling factor in the quantum Hall effect (Journal Article) | SciTech Connect ESR Detection of optical dynamic nuclear polarization in GaAs/Al{sub x}Ga{sub 1-x}As quantum wells at unity filling factor in the quantum Hall effect Citation Details In-Document Search Title: ESR Detection of optical dynamic nuclear polarization in GaAs/Al{sub x}Ga{sub 1-x}As quantum wells at unity filling factor in the quantum Hall effect This paper presents a study of the

  15. Ultra High p-doping Material Research for GaN Based Light Emitters

    SciTech Connect (OSTI)

    Vladimir Dmitriev

    2007-06-30

    The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

  16. D{sub 3h} [A-CE{sub 3}-A]{sup −} (E = Al and Ga, A = Si, Ge, Sn, and Pb): A new class of hexatomic mono-anionic species with trigonal bipyramidal carbon

    SciTech Connect (OSTI)

    Wu, Yan-Bo E-mail: zxwang@ucas.ac.cn; Li, Yan-Qin; Bai, Hui; Lu, Hai-Gang; Li, Si-Dian; Zhai, Hua-Jin; Wang, Zhi-Xiang E-mail: zxwang@ucas.ac.cn

    2014-03-14

    The non-classical trigonal bipyramidal carbon (TBPC) arrangement generally exists as transition states (TSs) in nucleophilic bimolecular substitution (S{sub N}2) reactions. Nevertheless, chemists have been curious about whether such a carbon bonding could be stable in equilibrium structures for decades. As the TBPC arrangement was normally realized as cationic species theoretically and experimentally, only one anionic example ([At-C(CN){sub 3}-At]{sup −}) was computationally devised. Herein, we report the design of a new class of anionic TBPC species by using the strategy similar to that for stabilizing the non-classical planar hypercoordinate carbon. When electron deficient Al and Ga were used as the equatorial ligands, eight D{sub 3h} [A-CE{sub 3}-A]{sup −} (E = Al and Ga, A = Si, Ge, Sn, and Pb) TBPC structures were found to be the energy minima rather than TSs at both the B3LYP and MP2 levels. Remarkably, the energetic results at the CCSD(T) optimization level further identify [Ge-CAl{sub 3}-Ge]{sup −} and [Sn-CGa{sub 3}-Sn]{sup −} even to be the global minima and [Si-CAl{sub 3}-Si]{sup −} and [Ge-CGa{sub 3}-Ge]{sup −} to be the local minima, only slightly higher than their global minima. The electronic structure analyses reveal that the substantial ionic C–E bonding, the peripheral E–A covalent bonding, and the axial mc-2e (multi center-two electrons) bonding play roles in stabilizing these TBPC structures. The structural simplicity and the high thermodynamic stability suggest that some of these species may be generated and captured in the gas phase. Furthermore, as mono-anionic species, their first vertical detachment energies are differentiable from those of their nearest isomers, which would facilitate their characterization via experiments such as the negative ion photoelectron spectroscopy.

  17. Method of plasma etching GA-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2013-01-01

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

  18. Method of plasma etching Ga-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  19. Average Structure Evolution of ?-phase Pu-Ga Alloys

    SciTech Connect (OSTI)

    Smith, Alice Iulia; Page, Katharine L.; Gourdon, Olivier; Siewenie, Joan E.; Richmond, Scott; Saleh, Tarik A.; Ramos, Michael; Schwartz, Daniel S.

    2015-03-30

    [Full Text] Plutonium metal is a highly unusual element, exhibiting six allotropes at ambient pressure, from room temperature to its melting point. Many phases of plutonium metal are unstable with temperature, pressure, chemical additions, and time. This strongly affects structure and properties, and becomes of high importance, particularly when considering effects on structural integrity over long time periods. The fcc ?-phase deserves additional attention, not only in the context of understanding the electronic structure of Pu, but also as one of the few high-symmetry actinide phases that can be stabilized down to ambient pressure and room temperature by alloying it with trivalent elements. We will present results on recent work on aging of Pu-2at.%Ga and Pu-7at.%Ga alloys

  20. Photosensitivity of the Ni-n-GaAs Schottky barriers

    SciTech Connect (OSTI)

    Melebaev, D.; Melebaeva, G. D.; Rud', V. Yu. Rud', Yu. V.

    2009-01-15

    The method of chemical deposition is used to form the structures with the Ni-n-GaAs Schottky barrier. The thickness of the Ni layers with a specular outer surface was varied within the range of 150-220 A. It was experimentally observed for the first time that photosensitivity of the obtained barriers with the semitransparent Ni layers illuminated is practically absent in the Fowler region of the spectrum at hv = 0.9-1.5 eV. This circumstance is related mainly to the fact that, in this case, the Ni layer side of the structure was illuminated, and radiation with the photon energy hv < 1.3 eV was effectively reflected from the nickel surface. It is established that the developed Ni-n-GaAs structures can be used as high-efficiency wide-band photoconverters of both visible and ultraviolet radiation.

  1. Formation and properties of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Lockwood, D.J.; Fraser, J.W.; Graham, M.J.; Isaacs, H.S.

    1996-06-01

    Porous structures on n-type GaAs (100) can be grown electrochemically in chloride-containing solutions. Crystallographic etching of the sample is a precursor stage of the attack. Polarization curves reveal the existanece of a critical onset potential for por formation (PFP). PFP is strongly dependent on the doping level of the sample and presence of surface defects. Good agreement between PFP and breakdown voltage of the space charge layer is found. Surface analysis by EDX, AES, and XPS show that the porous structure consists mainly of GaAs and that anion uptake in the structure can only observed after attackhas been initiated. Photoluminescence measurements reveal (under certain conditions) visible light emission from the porous structure.

  2. AlGaAs diode pumped tunable chromium lasers

    DOE Patents [OSTI]

    Krupke, William F.; Payne, Stephen A.

    1992-01-01

    An all-solid-state laser system is disclosed wherein the laser is pumped in the longwave wing of the pump absorption band. By utilizing a laser material that will accept unusually high dopant concentrations without deleterious effects on the crystal lattice one is able to compensate for the decreased cross section in the wing of the absorption band, and the number of pump sources which can be used with such a material increases correspondingly. In a particular embodiment a chromium doped colquiriite-structure crystal such as Cr:LiSrAlF.sub.6 is the laser material. The invention avoids the problems associated with using AlGaInP diodes by doping the Cr:LiSrAlF.sub.6 heavily to enable efficient pumping in the longwave wing of the absorption band with more practical AlGaAs diodes.

  3. Bond strength of cementitious borehole plugs in welded tuff

    SciTech Connect (OSTI)

    Akgun, H.; Daemen, J.J.K.

    1991-02-01

    Axial loads on plugs or seals in an underground repository due to gas, water pressures and temperature changes induced subsequent to waste and plug emplacement lead to shear stresses at the plug/rock contact. Therefore, the bond between the plug and rock is a critical element for the design and effectiveness of plugs in boreholes, shafts or tunnels. This study includes a systematic investigation of the bond strength of cementitious borehole plugs in welded tuff. Analytical and numerical analysis of borehole plug-rock stress transfer mechanics is performed. The interface strength and deformation are studied as a function of Young`s modulus ratio of plug and rock, plug length and rock cylinder outside-to-inside radius ratio. The tensile stresses in and near an axially loaded plug are analyzed. The frictional interface strength of an axially loaded borehole plug, the effect of axial stress and lateral external stress, and thermal effects are also analyzed. Implications for plug design are discussed. The main conclusion is a strong recommendation to design friction plugs in shafts, drifts, tunnels or boreholes with a minimum length to diameter ratio of four. Such a geometrical design will reduce tensile stresses in the plug and in the host rock to a level which should minimize the risk of long-term deterioration caused by excessive tensile stresses. Push-out tests have been used to determine the bond strength by applying an axial load to cement plugs emplaced in boreholes in welded tuff cylinders. A total of 130 push-out tests have been performed as a function of borehole size, plug length, temperature, and degree of saturation of the host tuff. The use of four different borehole radii enables evaluation of size effects. 119 refs., 42 figs., 20 tabs.

  4. Gallium hole traps in irradiated KTiOPO{sub 4}:Ga crystals

    SciTech Connect (OSTI)

    Grachev, V.; Meyer, M.; Malovichko, G.; Hunt, A. W.

    2014-12-07

    Nominally pure and gallium doped single crystals of potassium titanyl phosphate (KTiOPO{sub 4}) have been studied by Electron Paramagnetic Resonance at low temperatures before and after irradiation. Irradiation with 20?MeV electrons performed at room temperature and liquid nitrogen temperature caused an appearance of electrons and holes. Gallium impurities act as hole traps in KTiOPO{sub 4} creating Ga{sup 4+} centers. Two different Ga{sup 4+} centers were observed, Ga1 and Ga2. The Ga1 centers are dominant in Ga-doped samples. For the Ga1 center, a superhyperfine structure with one nucleus with nuclear spin was registered and attributed to the interaction of gallium electrons with a phosphorus nucleus or proton in its surrounding. In both Ga1 and Ga2 centers, Ga{sup 4+} ions substitute for Ti{sup 4+} ions, but with a preference to one of two electrically distinct crystallographic positions (site selective substitution). The Ga doping eliminates one of the shortcomings of KTP crystalsionic conductivity of bulk crystals. However, this does not improve significantly the resistance of the crystals to electron and ?-radiation.

  5. Characterization and device performance of (AgCu)(InGa)Se2 absorber layers

    SciTech Connect (OSTI)

    Hanket, Gregory; Boyle, Jonathan H.; Shafarman, William N.

    2009-06-08

    The study of (AgCu)(InGa)Se2 absorber layers is of interest in that Ag-chalcopyrites exhibit both wider bandgaps and lower melting points than their Cu counterparts. (AgCu)(InGa)Se2 absorber layers were deposited over the composition range 0 < Ag/(Ag+Cu) < 1 and 0.3 < Ga/(In+Ga) < 1.0 using a variety of elemental co-evaporation processes. Films were found to be singlephase over the entire composition range, in contrast to prior studies. Devices with Ga content 0.3 < Ga/(In+Ga) <0.5 tolerated Ag incorporation up to Ag/(Ag+Cu) = 0.5 without appreciable performance loss. Ag-containing films with Ga/(In+Ga) = 0.8 showed improved device characteristics over Cu-only control samples, in particular a 30-40% increase in short-circuit current. An absorber layer with composition Ag/(Ag+Cu) = 0.75 and Ga/(In+Ga) = 0.8 yielded a device with VOC = 890 mV, JSC = 20.5mA/cm2, fill factor = 71.3%, and ? = 13.0%.

  6. The transputer based GA. SP data acquisition system

    SciTech Connect (OSTI)

    Colombo, D.; Avano, B.; DePoli, M.; Maron, G. ); Negro, A.; Parlati, G. )

    1992-04-01

    In this paper, the new data acquisition for the GA.SP detector is presented. It is a distributed system based on a network of 40 T800 and T222 transputers linked to a VME system used for histogram storage. A 100 MBit/s FDDI ring connects the system to UNIX workstations used for the experiment control, histogram display and second level data analysis.

  7. Fuel cell system with separating structure bonded to electrolyte

    DOE Patents [OSTI]

    Bourgeois, Richard Scott; Gudlavalleti, Sauri; Quek, Shu Ching; Hasz, Wayne Charles; Powers, James Daniel

    2010-09-28

    A fuel cell assembly comprises a separating structure configured for separating a first reactant and a second reactant wherein the separating structure has an opening therein. The fuel cell assembly further comprises a fuel cell comprising a first electrode, a second electrode, and an electrolyte interposed between the first and second electrodes, and a passage configured to introduce the second reactant to the second electrode. The electrolyte is bonded to the separating structure with the first electrode being situated within the opening, and the second electrode being situated within the passage.

  8. ECCENTRIC ROLLING OF POWDER AND BONDING AGENT INTO SPHERICAL PELLETS

    DOE Patents [OSTI]

    Patton, G. Jr.; Zirinsky, S.

    1961-06-01

    A machine is described for pelletizing powder and bonding agent into spherical pellets of high density and uniform size. In this device, the material to be compacted is added to a flat circular pan which is moved in a circular orbit in a horizontal plane about an axis displaced from that of the pan's central axis without rotating the pan about its central axis. This movement causes the material contained therein to roll around the outside wall of the container and build up pellets of uniform shape, size, and density.

  9. Efficiency calculations of thin-film GaAs solar cells on Si substrates

    SciTech Connect (OSTI)

    Yamaguchi, M.; Amano, C.

    1985-11-01

    Dislocation effect upon the efficiency of single-crystal thin-film AlGaAs-GaAs heteroface solar cells on Si substrates is analyzed. Solar-cell properties are calculated based on a simple model; in the model, dislocations act as recombination centers to reduce the minority-carrier diffusion length in each layer and increase the space-charge layer recombination current. Numerical analysis is also carried out to optimize thin-film AlGaAs-GaAs heteroface solar-cell structures. The fabrication of thin-film AlGaAs-GaAs heteroface solar cells with a practical efficiency larger than 18% on Si substrates appears possible if the dislocation density in the thin-film GaAs layer is less than 10/sup 6/ cm/sup -2/.

  10. Optical and quantum efficiency analysis of (Ag,Cu)(In,Ga)Se2 absorber layers

    SciTech Connect (OSTI)

    Boyle, Jonathan; Hanket, Gregory; Shafarman, William

    2009-06-09

    (Ag,Cu)(In,Ga)Se2 thin films have been deposited by elemental co-evaporation over a wide range of compositions and their optical properties characterized by transmission and reflection measurements and by relative shift analysis of quantum efficiency device measurements. The optical bandgaps were determined by performing linear fits of (?h?)2 vs. h?, and the quantum efficiency bandgaps were determined by relative shift analysis of device curves with fixed Ga/(In+Ga) composition, but varying Ag/(Cu+Ag) composition. The determined experimental optical bandgap ranges of the Ga/(In+Ga) = 0.31, 0.52, and 0.82 groups, with Ag/(Cu+Ag) ranging from 0 to 1, were 1.19-1.45 eV, 1.32-1.56 eV, and 1.52-1.76 eV, respectively. The optical bowing parameter of the different Ga/(In+Ga) groups was also determined.

  11. Crystallographically uniform arrays of ordered (In)GaN nanocolumns

    SciTech Connect (OSTI)

    Gačević, Ž. Bengoechea-Encabo, A.; Albert, S.; Calleja, E.

    2015-01-21

    In this work, through a comparative study of self-assembled (SA) and selective area grown (SAG) (In)GaN nanocolumn (NC) ensembles, we first give a detailed insight into improved crystallographic uniformity (homogeneity of crystallographic tilts and twists) of the latter ones. The study, performed making use of: reflective high energy electron diffraction, X-ray diffraction and scanning electron microscopy, reveals that unlike their SA counterparts, the ensembles of SAG NCs show single epitaxial relationship to both sapphire(0001) and Si(111) underlying substrates. In the second part of the article, making use of X-ray diffraction, we directly show that the selective area growth leads to improved compositional uniformity of InGaN NC ensembles. This further leads to improved spectral purity of their luminescence, as confirmed by comparative macro-photoluminescence measurements performed on SA and SAG InGaN NC ensembles. An improved crystallographic uniformity of NC ensembles facilitates their integration into optoelectronic devices, whereas their improved compositional uniformity allows for their employment in single-color optoelectronic applications.

  12. Ga lithography in sputtered niobium for superconductive micro and nanowires

    SciTech Connect (OSTI)

    Henry, M. David; Wolfley, Steve; Monson, Todd; Lewis, Rupert

    2014-08-18

    This work demonstrates the use of focused ion beam (FIB) implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12?nm deep with a 14?nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10??m by 10??m and 100??m by 100??m, demonstrate that doses above than 7.5??10{sup 15?}cm{sup ?2} at 30?kV provide adequate mask protection for a 205?nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75?nm wide by 10??m long connected to 50??m wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature (T{sub c})?=?7.7?K was measured using a magnetic properties measurement system. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.

  13. Terrestrial Concentrator PV Modules Based on GaInP/GaAs/Ge TJ Cells and Minilens Panels

    SciTech Connect (OSTI)

    Rumyantsev, V. D.; Sadchikov, N. A.; Chalov, A. E.; Ionova, E. A.; Friedman, D. J.; Glenn, G.

    2006-01-01

    This paper is a description of research activity in the field of cost-effective modules realizing the concept of very high solar concentration with small-aperture area Fresnel lenses and multijunction III-V cells. Structural simplicity and 'all-glass' design are the guiding principles of the corresponding development. The advanced concentrator modules are made with silicone Fresnel lens panels (from 8 up to 144 lenses, each lens is 4 times 4 cm{sup 2} in aperture area) with composite structure. GaInP/GaAs/Ge triple-junction cells with average efficiencies of 31.1 and 34.7% at 1000 suns were used for the modules. Conversion efficiency as high as 26.3% has been measured indoors in a test module using a newly developed large-area solar simulator.

  14. Passivation of deep level states caused by misfit dislocations in InGaAs on patterned GaAs

    SciTech Connect (OSTI)

    Matragrano, M.J.; Watson, G.P.; Ast, D.G. ); Anderson, T.J.; Pathangey, B. )

    1993-03-22

    Deep level transient spectroscopy (DLTS) and cathodoluminescence (CL) were used to study the hydrogen passivation of misfit dislocations in In[sub 0.06]Ga[sub 0.94]As/GaAs heterostructures. The CL observations indicate that hydrogen plasma exposure passivates most, but not all, of the dark line defects existing in the specimen prior to hydrogenation. The concentration of deep level defect states that cannot be passivated is below the detection limit of the DLTS instrument (approximately 4[times]10[sup 12] cm[sup [minus]3]). We find the passivation is stable after anneals at temperatures as high as 600 [degree]C, indicating that hydrogen passivation of misfit dislocations is at least as stable as that of the isolated point defect studied previously with DLTS [W. C. Dautremont-Smith, J. C. Nabity, V. Swaminathan, M. Stavola, J. Chevalier, C. W. Tu, and S. J. Pearton, Appl. Phys. Lett. [bold 49] 1098 (1986)].

  15. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

    SciTech Connect (OSTI)

    Young, Erin C.; Wu Feng; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.; Romanov, Alexey E.

    2012-10-01

    In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

  16. Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

    SciTech Connect (OSTI)

    Craig, A. P.; Percy, B.; Marshall, A. R. J.; Jain, M.; Wicks, G.; Hossain, K.; Golding, T.; McEwan, K.; Howle, C.

    2015-05-18

    Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In{sub 0.28}Ga{sub 0.72}As{sub 0.25}Sb{sub 0.75} allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×10{sup 10} Jones and 1×10{sup 10} Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures.

  17. Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces

    SciTech Connect (OSTI)

    Li, Huijie E-mail: sh-yyang@semi.ac.cn; Zhao, Guijuan; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Yang, Shaoyan E-mail: sh-yyang@semi.ac.cn; Wang, Lianshan; Zhu, Qinsheng

    2014-05-21

    One dimensional electron gas (1DEG) arrays in vicinal GaN/AlGaN heterostructures have been studied. The steps at the interface would lead to the lateral barriers and limit the electron movement perpendicular to such steps. Through a self-consistent Schrdinger-Poisson approach, the electron energy levels and wave functions were calculated. It was found that when the total electron density was increased, the lateral barriers were lowered due to the screening effects by the electrons, and the electron gas became more two-dimension like. The calculated 1DEG densities were compared to the experimental values and good agreements were found. Moreover, we found that a higher doping density is more beneficial to form 1-D like electron gas arrays.

  18. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda; Song, Bo; Qi, Meng; Hu, Zongyang; Nomoto, Kazuki; Yan, Xiaodong; Cao, Yu; Johnson, Wayne; Kohn, Erhard; Jena, Debdeep; et al

    2015-02-16

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 mΩ · cm2), a low turn-on voltage (<0.7 V) and a high reverse breakdown voltage BV (>1.9 kV), were simultaneously achieved in devices with a 25 μm anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW·cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

  19. Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles

    SciTech Connect (OSTI)

    Tsai, Jung-Hui; Guo, Der-Feng; Lour, Wen-Shiung

    2011-09-15

    In this article, the comparison of DC performance on InGaP/GaAs pseudomorphic field-effect transistors with tripe doped-channel profiles is demonstrated. As compared to the uniform and high-medium-low doped-channel devices, the low-medium-high doped-channel device exhibits the broadest gate voltage swing and the best device linearity because more twodimensional electron gases are formed in the heaviest doped channel to enhance the magnitude of negative threshold voltage. Experimentally, the transconductance within 50% of its maximum value for gate voltage swing is 4.62 V in the low-medium-high doped-channel device, which is greater than 3.58 (3.30) V in the uniform (high-medium-low) doped-channel device.

  20. Electron heating due to microwave photoexcitation in the high mobility GaAs/AlGaAs two dimensional electron system

    SciTech Connect (OSTI)

    Ramanayaka, A. N.; Mani, R. G.; Wegscheider, W.

    2013-12-04

    We extract the electron temperature in the microwave photo-excited high mobility GaAs/AlGaAs two dimensional electron system (2DES) by studying the influence of microwave radiation on the amplitude of Shubnikov-de Haas oscillations (SdHOs) in a regime where the cyclotron frequency, ?{sub c}, and the microwave angular frequency, ?, satisfy 2? ? ?{sub c} ? 3.5? The results indicate that increasing the incident microwave power has a weak effect on the amplitude of the SdHOs and therefore the electron temperature, in comparison to the influence of modest temperature changes on the dark-specimen SdH effect. The results indicate negligible electron heating under modest microwave photo-excitation, in good agreement with theoretical predictions.