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Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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1

Fitzgerald Wtr Lgt & Bond Comm | Open Energy Information  

Open Energy Info (EERE)

Fitzgerald Wtr Lgt & Bond Comm Fitzgerald Wtr Lgt & Bond Comm Jump to: navigation, search Name Fitzgerald Wtr Lgt & Bond Comm Place Georgia Utility Id 6380 Utility Location Yes Ownership M NERC Location SERC NERC RFC Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Commercial Industrial Industrial Residential City Residential Residential Rural Residential Average Rates Residential: $0.1000/kWh Commercial: $0.1140/kWh Industrial: $0.0817/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a"

2

comm022  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

3 Comm 22.10 3 Comm 22.10 DEPARTMENT OF COMMERCE Unofficial Text (See Printed Volume). Current through date and Register shown on Title Page. Register, March, 2009, No. 639 Chapter Comm 22 ENERGY CONSERVATION Subchapter I - Scope and Application Comm 22.01 Scope. Comm 22.02 Application. Subchapter II - Definitions Comm 22.10 Definitions. Subchapter III - Insulation Materials and Installation Comm 22.20 Basic requirements. Comm 22.21 Protection of insulation. Subchapter IV - Dwelling Thermal Envelope Comm 22.30 General design requirements. Comm 22.31 Prescriptive insulation and fenestration criteria. Comm 22.32 Specific insulation requirements. Comm 22.33 Slab floors. Comm 22.34 Crawl spaces. Comm 22.35 Thermally isolated sunrooms. Comm 22.36 Fenestration. Comm 22.37 Air leakage. Comm 22.38

3

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a  

E-Print Network [OSTI]

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a Anna Fontcuberta i Morral,b and Harry, Pasadena, California 91125 Daniel J. Aiken Emcore Photovoltaics, Albuquerque, New Mexico 87123 Mark W. Wanlass National Renewable Energy Laboratory, Golden, Colorado 80401 Received 19 March 2006; accepted 26

Atwater, Harry

4

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect (OSTI)

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

5

COMM REF  

Office of Legacy Management (LM)

4 4 COMM REF _ ADMIN RCD _ TECHNICAL SERVICES DIVISION (TSD) BACKFIT (Documents dated prior to 1 November 1988) FUSRAP COMMUNICATIONS DISTRIBUTION DOEJORO TECHNICAL SERVICES DIVISION (CE-53) BECHTEL NATIONAL., INC. - JOB 14501 RESPONSE TRACKING INFORMAnON I lOWED BY: (ORG) I TARGET DATE I I CLOSING CCN COMPL DATE I CLOSING REF SECONDARY: I I OWED TO: lOWED BY: (ORG) I / I I I TARGET DATE I CLOSING CCN COMPL DATE CLOSING REF _ _~_.::..:~ TO_---i!on~/:....:.$uT'__ COMM DATaO..8//3/il ADDR CODE I I I I CLOSES CCN WBS _~/_=I.!>_.:.../ __ ......!/:....l>.:.._.....¥'__ _ NUMBER ST SUBJECT CODE If~ 0 DOE FILE NO. _ AFFECTED DOCUMENT &0 tA59i< c:eN:f:I: ~~~..:lII...3o...3lo...3~~~:lo..3..~..:lII...3o...3lo...3~~~:lo..3..~.3o..Jl,..JIrt..3I~~~~:lo..3..~.JIo.:CCN _

6

Improved electrical properties of wafer-bonded p-GaAs/n-InP interfaces with sulfide passivation  

E-Print Network [OSTI]

subcells InGaAsP, InGaAs via direct wafer bonding.8 In order to monolithically interconnect between the top materials, enable increased conversion efficiency due to the higher absorption efficiency obtained from. The additional layer reduces the incident light inten- sity because of the free carrier absorption. A wafer

Atwater, Harry

7

Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices  

SciTech Connect (OSTI)

GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

C.A. Wang; D.A. Shiau; P.G. Murphy; P.W. O'brien; R.K. Huang; M.K. Connors; A.C. Anderson; D. Donetsky; S. Anikeev; G. Belenky; D.M. Depoy; G. Nichols

2003-06-16T23:59:59.000Z

8

The influence of bond flexibility and molecular size on the chemically selective bonding of In 2 O and Ga 2 O on GaAs (001)-c(28)/(24)  

Science Journals Connector (OSTI)

The surface structures formed upon deposition of In 2 O and Ga 2 O by molecular beam epitaxy onto the arsenic-rich GaAs (001)-c(28)/(24) surface have been studied using scanning tunneling microscopy and density functional theory. In 2 O initially bonds with indium atoms bonding to second layer gallium atoms within the trough and proceeds to insert into or between first layer arsenic dimer pairs. In contrast Ga 2 O only inserts into or between arsenic dimer pairs due to chemical site constraints. The calculated energy needed to bend a Ga 2 O molecule approximately 70 so that it can fit into an arsenic dimer pair is 0.6 eV less than that required for In 2 O . The greater flexibility of the Ga 2 O molecule causes its insertion site to be 0.77 eV more exothermic than the In 2 O insertion site. This result shows that although trends in the periodic table can be used to predict some surface reactions small changes in atomic size can play a significant role in the chemistry of gas/surface reactions through the indirect effects of bond angle flexibility and bond length stiffness.

M. J. Hale; J. Z. Sexton; D. L. Winn; A. C. Kummel; M. Erbudak; M. Passlack

2004-01-01T23:59:59.000Z

9

GaInAsSb/A1GaAsSb/Sb Thermophotovoltaic Devices With an Internal Back-Surface Reflector Formed by Wafer Bonding  

SciTech Connect (OSTI)

A novel implementation for GAInAsSb/AlGaAsSb/GaSb TPV cells with an internal back-surface reflector (BSR) formed by wafer bonding to GaAs is demonstrated. The SiO{sub x}/Ti/Au internal BSR enhances optical absorption within the device, while the dielectric layer provides electrical isolation. This configuration has the potential to improve TPV device performance; is compatible with monolithic series-interconnection of TPV cells for building voltage; and can mitigate the requirements of filters used for front-surface spectral control. At a short-circuit density of 0.4 A/cm{sup 2}, the open-circuit voltage of a single TPV cell is 0.2 V, compared to 0.37 and 1.8 V for 2- and 10-junction series-interconnected TPV cells, respectively.

C.A. Wang; R.K. Huang; D.A. Shiau; M.K. Connors; P.G. Murphy; P.W. O'brien; A.C. Anderson; D.M. DePoy; G. Nichols; M.N. Palmasiano

2002-12-18T23:59:59.000Z

10

Tuntutuliak Comm Services Assn | Open Energy Information  

Open Energy Info (EERE)

Tuntutuliak Comm Services Assn Tuntutuliak Comm Services Assn Jump to: navigation, search Name Tuntutuliak Comm Services Assn Place Alaska Utility Id 19267 Utility Location Yes Ownership C NERC Location AK Operates Generating Plant Yes Activity Generation Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png All Other Community Facilities Residential Residential Residential Washeteria Residential Average Rates Residential: $0.7200/kWh Commercial: $0.6820/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from "http://en.openei.org/w/index.php?title=Tuntutuliak_Comm_Services_Assn&oldid=411884

11

Lanesboro Public Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Lanesboro Public Utility Comm Lanesboro Public Utility Comm Jump to: navigation, search Name Lanesboro Public Utility Comm Place Minnesota Utility Id 10685 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial- Phase 2 Commercial Commercial- Three Phase Commercial Residential Residential Average Rates Residential: $0.1140/kWh Commercial: $0.1090/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from "http://en.openei.org/w/index.php?title=Lanesboro_Public_Utility_Comm&oldid=410975

12

Truman Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Truman Public Utilities Comm Truman Public Utilities Comm Jump to: navigation, search Name Truman Public Utilities Comm Place Minnesota Utility Id 19237 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Operates Generating Plant Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png No rate schedules available. Average Rates Residential: $0.1360/kWh Commercial: $0.1410/kWh Industrial: $0.1150/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from "http://en.openei.org/w/index.php?title=Truman_Public_Utilities_Comm&oldid=411881"

13

Adrian Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Public Utilities Comm Public Utilities Comm Jump to: navigation, search Name Adrian Public Utilities Comm Place Minnesota Utility Id 150 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Large Commercial - LC Commercial Residential - RL Residential Residential Electric Heat Residential Security Lights - SL Commercial Small Commercial - SC Single-Phase Commercial Small Commercial - SC Three-Phase Commercial Average Rates Residential: $0.0955/kWh Commercial: $0.0980/kWh Industrial: $0.1120/kWh References

14

Hawley Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Hawley Public Utilities Comm Hawley Public Utilities Comm Jump to: navigation, search Name Hawley Public Utilities Comm Place Minnesota Utility Id 8307 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png 3 PHASE COMMERCIAL ELECTRIC Commercial COMMERCIAL ELECTRIC Commercial ELECTRIC VARIANCE Commercial GENERATOR RATE Commercial GROUND SOURCE HEAT PUMP - RESIDENTIAL Residential LARGE COMMERCIAL ELECTRIC Commercial MINNKOTA WIND SURCHARGE - COMMERCIAL Commercial MINNKOTA WIND SURCHARGE - RESIDENTIAL Residential

15

Barbourville Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Barbourville Utility Comm Barbourville Utility Comm Jump to: navigation, search Name Barbourville Utility Comm Place Kentucky Utility Id 1201 Utility Location Yes Ownership M NERC Location RFC NERC RFC Yes Activity Transmission Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Electric Rate Commercial Large Power Electric Commercial Residential Electric Service Residential Average Rates Residential: $0.0778/kWh Commercial: $0.0757/kWh Industrial: $0.0626/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from

16

Shakopee Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Shakopee Public Utilities Comm Shakopee Public Utilities Comm Jump to: navigation, search Name Shakopee Public Utilities Comm Place Minnesota Website www.ci.shakopee.mn.us/ind Utility Id 16971 Utility Location Yes Ownership M NERC Location MRO Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial service rate Commercial Large general service rate Industrial Large industrial service rate Industrial Residential service rate Residential Residential service rate - senior citizens Residential Average Rates Residential: $0.1080/kWh Commercial: $0.0946/kWh Industrial: $0.0805/kWh

17

Springfield Public Utils Comm | Open Energy Information  

Open Energy Info (EERE)

Springfield Public Utils Comm Springfield Public Utils Comm Place Minnesota Utility Id 17836 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Commercial Power Commercial Residential Residential Residential with Electric Heating Residential Street Lighting Lighting Average Rates Residential: $0.1180/kWh Commercial: $0.0998/kWh Industrial: $0.0979/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a" Retrieved from "http://en.openei.org/w/index.php?title=Springfield_Public_Utils_Comm&oldid=411601

18

Hutchinson Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Hutchinson Utilities Comm Hutchinson Utilities Comm Jump to: navigation, search Name Hutchinson Utilities Comm Place Minnesota Utility Id 9130 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Wholesale Marketing Yes Activity Retail Marketing Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png LARGE GENERAL ELECTRIC SERVICE Industrial LARGE GENERAL ELECTRIC SERVICE - PRIMARY VOLTAGE (CUSTOMER OWNED) Industrial

19

Juneau Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Comm Comm Jump to: navigation, search Name Juneau Utility Comm Place Wisconsin Utility Id 9936 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Cp-1 Small Power Service between 50kW and 200kW Demand Primary Metering and Transformer Ownership Discount with Parallel Generation(20kW or less) Industrial Cp-1 Small Power Service between 50kW and 200kW Demand Primary Metering and Transformer Ownership Discount Industrial Cp-1 Small Power Service between 50kW and 200kW Demand Primary Metering

20

Corbin City Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Corbin City Utilities Comm Corbin City Utilities Comm Jump to: navigation, search Name Corbin City Utilities Comm Place Kentucky Utility Id 4341 Utility Location Yes Ownership M NERC Location RFC NERC RFC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png LGS-1 Large General Service Industrial LGS-2 Large General Srvice V2 Industrial RS-1 Residential Service Residential SGS-1 Small General Service Commercial SLS-1 Security Lighting Service-100 Watt Open Bottom Lighting SLS-1 Security Lighting Service-250 Watt Cobra Lighting SLS-1 Security Lighting Service-250 Watt Directional Flood Lighting

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Easton Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Utilities Comm Utilities Comm Jump to: navigation, search Name Easton Utilities Comm Place Maryland Utility Id 5625 Utility Location Yes Ownership M NERC Location RFC NERC RFC Yes RTO PJM Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png LARGE GENERAL SERVICE Commercial LARGE GENERAL SERVICE(Primary Metering) Commercial PRIMARY GENERAL SERVICE Commercial RESIDENTIAL RATE Residential SMALL GENERAL SERVICE Commercial SMALL GENERAL SERVICE(Primary Metering) Commercial

22

Reedsburg Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Reedsburg Utility Comm Reedsburg Utility Comm Jump to: navigation, search Name Reedsburg Utility Comm Place Wisconsin Utility Id 15804 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Cp-1 Small Power Service Industrial Cp-1 Small Power Service Primary Metering Discount with Parallel Generation(20kW or less) Industrial Cp-1 Small Power Service Primary Metering and Transformer Ownership Discount Industrial Cp-1 Small Power Service Primary Metering and Transformer Ownership

23

Fort Valley Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Utility Comm Utility Comm Jump to: navigation, search Name Fort Valley Utility Comm Place Georgia Utility Id 6617 Utility Location Yes Ownership M NERC Location SERC NERC SERC Yes Operates Generating Plant Yes Activity Buying Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png COMMERCIAL: #20 Commercial INDUSTRIAL LARGE POWER: #26/28 Industrial INSTITUTIONAL: #14 Commercial Industrial Small Power Industrial RESIDENTIAL: #10 Residential SMALL COMMERCIAL: #22 Commercial Average Rates Residential: $0.0787/kWh Commercial: $0.1030/kWh Industrial: $0.0772/kWh References

24

Aitkin Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Aitkin Public Utilities Comm Aitkin Public Utilities Comm Jump to: navigation, search Name Aitkin Public Utilities Comm Place Minnesota Utility Id 174 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Commercial Industrial Industrial Residential (Peak 08:00 a.m. - 12:00 p.m.) Residential Residential (Peak 12:00 p.m. - 5:00 p.m.) Residential Residential (Peak 5:00 p.m. - 9:00 p.m.) Residential Residential Dual Fuel Residential Security Lights 150 Watt Lighting Security Lights 250 Watt Lighting

25

Bagley Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Bagley Public Utilities Comm Bagley Public Utilities Comm Jump to: navigation, search Name Bagley Public Utilities Comm Place Minnesota Utility Id 1101 Utility Location Yes Ownership M NERC Location MRO Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Electric Commercial Commercial Electric Demand Commercial Commercial Electric Demand Three Phase Commercial Commercial Electric Three Phase Commercial Electric Heat Non Ripple New Residential Electric Heat Non Ripple Old Residential Electric Heat Ripple Plan 1 Residential Electric Heat Ripple Plan 2 Residential

26

Greenville Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Utilities Comm Utilities Comm Jump to: navigation, search Name Greenville Utilities Comm Place North Carolina Utility Id 7639 Utility Location Yes Ownership M NERC Location SERC NERC SERC Yes ISO Other Yes Activity Transmission Yes Activity Distribution Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png County, Municipal, or Housing Authority Outdoor Lighting- 175W Mercury Vapor Lighting County, Municipal, or Housing Authority Outdoor Lighting- 250W Mercury Vapor Lighting County, Municipal, or Housing Authority Outdoor Lighting- 250W Sodium Vapor

27

Proctor Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Proctor Public Utilities Comm Proctor Public Utilities Comm Jump to: navigation, search Name Proctor Public Utilities Comm Place Minnesota Utility Id 15460 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Electric- Demand Metering Commercial Commercial Electric- Single Phase Commercial Commercial Electric- Three Phase Commercial Residential Electric Residential Residential- Duel Fuel Residential Residential- ETS Residential Average Rates Residential: $0.0866/kWh Commercial: $0.0849/kWh Industrial: $0.0825/kWh

28

Algoma Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Algoma Utility Comm Algoma Utility Comm Jump to: navigation, search Name Algoma Utility Comm Place Wisconsin Utility Id 307 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Controlled Interdepartmental Service Commercial Customer Owner Generation Systems (Greater than 20kW) Industrial General Service - Optional Time-of-Day Single Phase less than 100kW 7am-7pm Industrial General Service - Optional Time-of-Day Single Phase less than 100kW 9am-9pm Industrial General Service - Optional Time-of-Day Single Phase less than 100kW 8am-8pm

29

Orlando Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Orlando Utilities Comm Orlando Utilities Comm (Redirected from OUC) Jump to: navigation, search Name Orlando Utilities Comm Place Florida Utility Id 14610 Utility Location Yes Ownership M NERC Location FRCC NERC FRCC Yes NERC SERC Yes Operates Generating Plant Yes Activity Generation Yes Activity Transmission Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Buying Distribution Yes Activity Wholesale Marketing Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Firm General Service Demand Primary Service Standby Service Industrial

30

Henderson City Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Henderson City Utility Comm Henderson City Utility Comm Jump to: navigation, search Name Henderson City Utility Comm Place Kentucky Utility Id 8449 Utility Location Yes Ownership M NERC Location serc NERC RFC Yes Operates Generating Plant Yes Activity Generation Yes Activity Transmission Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Demand Rate Schedule Schedule D Industrial General Service Rate Schedule Schedule GS-Single Phase- Commercial Commercial General Service Rate Schedule Schedule GS-Single Phase- Industrial Industrial General Service Rate Schedule Schedule GS-Three Phase- Commercial

31

Fairmont Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Public Utilities Comm Public Utilities Comm Jump to: navigation, search Name Fairmont Public Utilities Comm Place Minnesota Utility Id 6151 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png ALL ELECTRIC RATE Industrial COMMERCIAL SERVICE Commercial GENERAL SERVICE Industrial INDUSTRIAL SERVICE Industrial INDUSTRIAL SERVICE - PRIMARY VOLTAGE Industrial RESIDENTIAL HEAT Residential RESIDENTIAL SERVICE Residential RURAL SERVICE Residential

32

Mohawk Municipal Comm | Open Energy Information  

Open Energy Info (EERE)

Municipal Comm Municipal Comm Jump to: navigation, search Name Mohawk Municipal Comm Place New York Utility Id 12759 Utility Location Yes Ownership M NERC Location NPCC Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Industrial Rate Industrial Large Commercial Commercial Public Street Lighting Lighting Security Lighting 150 w lamp Lighting Security Lighting 175 w lamp Lighting Security Lighting 250 w lamp Lighting Security Lighting 400 w lamp Lighting Single-Phase Residential Residential Small Commercial Business Commercial Average Rates Residential: $0.0366/kWh

33

Williamstown Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Williamstown Utility Comm Williamstown Utility Comm Jump to: navigation, search Name Williamstown Utility Comm Place Kentucky Utility Id 20731 Utility Location Yes Ownership M NERC Location RFC NERC RFC Yes ISO MISO Yes Activity Buying Transmission Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png 100 Watt High Pressure Sodium Area Light Lighting 150 Watt High Pressure Sodium Floodlight Lighting 175 Watt Mercury Vapor Area Light Lighting 250 Watt High Pressure Sodium Area Light Lighting 250 Watt High Pressure Sodium Floodlight Lighting 400 Watt High Pressure Sodium Area Light Lighting

34

Crisp County Power Comm | Open Energy Information  

Open Energy Info (EERE)

Crisp County Power Comm Crisp County Power Comm Jump to: navigation, search Name Crisp County Power Comm Place Georgia Utility Id 4538 Utility Location Yes Ownership P NERC Location SERC NERC SERC Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes Activity Retail Marketing Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Agriculture Process Service Commercial Farm Service Commercial Fuel Cost Recovery Schedule- Primary Distribution Commercial Fuel Cost Recovery Schedule- Secondary Distribution Commercial Fuel Cost Recovery Schedule- Transmission Commercial

35

Hibbing Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Hibbing Public Utilities Comm Hibbing Public Utilities Comm Jump to: navigation, search Name Hibbing Public Utilities Comm Place Minnesota Utility Id 8543 Utility Location Yes Ownership M NERC Location MRO NERC FRCC Yes Operates Generating Plant Yes Activity Generation Yes Activity Transmission Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png -POWER SERVICE Commercial Commercial Security Lighting Rate - 100 Watt H.P.S Lighting Commercial Security Lighting Rate - 250 Watt H.P.S Lighting General Service - Single Phase Commercial General Service - Three Phase Commercial

36

Greenwood Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Comm Comm Jump to: navigation, search Name Greenwood Utilities Comm Place Mississippi Utility Id 7651 Utility Location Yes Ownership M NERC Location SERC NERC SERC Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial All Electric - Single Phase Commercial Commercial All Electric - Three Phase Commercial Cotton Gin Power Commercial General Lighting and Power - Single Phase Commercial General Lighting and Power - Three Phase Commercial Large General Service Commercial

37

New Prague Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Comm Comm Jump to: navigation, search Name New Prague Utilities Comm Place Minnesota Utility Id 13480 Utility Location Yes Ownership M NERC Location MRO NERC RFC Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial - Single Phase Commercial Commercial - Three Phase Commercial Industrial Industrial Interruptible Commercial Large Industrial Industrial Residential service rates Residential Security Lights - Rental Lighting Small Industrial Industrial

38

Preston Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Comm Comm Jump to: navigation, search Name Preston Public Utilities Comm Place Minnesota Utility Id 15348 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png All Electric Residential Area of Security Lighting- (175W Mercury) Lighting Area of Security Lighting- (400W Lucalox) Lighting Area of Security Lighting- (400W Mercury) Lighting Commercial All Electric- Rate 27 Commercial Commercial All Electric- Rate 28 Commercial

39

Princeton Public Utils Comm | Open Energy Information  

Open Energy Info (EERE)

Princeton Public Utils Comm Princeton Public Utils Comm Place Minnesota Utility Id 15387 Utility Location Yes Ownership M NERC Location MAPP NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png 100W High Pressure Sodium Lighting 1500W Quartz Commercial 250W High Pressure Sodium Lighting 250W Spot Commercial 400W High Pressure Sodium Lighting Large General Service Commercial Large General Service- Time of Use Commercial Large Power Service Industrial Large Power Service- Time of Use Industrial Residential Service Residential

40

Wyandotte Municipal Serv Comm | Open Energy Information  

Open Energy Info (EERE)

Wyandotte Municipal Serv Comm Wyandotte Municipal Serv Comm Place Michigan Utility Id 21048 Utility Location Yes Ownership M NERC Location RFC NERC RFC Yes Operates Generating Plant Yes Activity Generation Yes Activity Transmission Yes Activity Buying Transmission Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png HEATING STEAM RATE Residential HOT WATER DISTRICT HEATING RATE Commercial LARGE GENERAL SERVICE RATE Commercial Commercial LARGE GENERAL SERVICE RATE Commercial (Time-Differentiated Meter) Commercial LARGE GENERAL SERVICE RATE Industrial (Time-Differentiated Meter)

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Florence Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Florence Utility Comm Florence Utility Comm Jump to: navigation, search Name Florence Utility Comm Place Wisconsin Utility Id 6424 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Cp-1 Small Power Service between 50kW and 200kW Demand with Parallel Generation (20 kW or less) Industrial Cp-1 Small Power Service between 50kW and 200kW Demand Industrial Cp-1 TOD Small Power Optional Time-of-Day Service between 50kW and 200kW Demand 7am-9pm with Parallel Generation(20 kW or less) Industrial

42

Orlando Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search Jump to: navigation, search Name Orlando Utilities Comm Place Florida Utility Id 14610 Utility Location Yes Ownership M NERC Location FRCC NERC FRCC Yes NERC SERC Yes Operates Generating Plant Yes Activity Generation Yes Activity Transmission Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Buying Distribution Yes Activity Wholesale Marketing Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Firm General Service Demand Primary Service Standby Service Industrial Firm General Service Demand Standby Service Industrial

43

Hydrogen-Bond Networks: Strengths of Different Types of Hydrogen...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

energetic driving force for enzyme catalysis and conformational changes such as in protein folding due to multiple hydrogen bonds in a HBN. Citation: Shokri A, Y Wang, GA...

44

Cedarburg Light & Water Comm | Open Energy Information  

Open Energy Info (EERE)

Cedarburg Light & Water Comm Cedarburg Light & Water Comm Jump to: navigation, search Name Cedarburg Light & Water Comm Place Wisconsin Utility Id 3208 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png General Service - Regular Rate - Single Phase Commercial General Service - Regular rate - Three Phase Commercial General Service Optional Time-of-Day Rate - Single Phase 7am-7pm Commercial General Service Optional Time-of-Day Rate - Single Phase 8am-8pm Commercial

45

Brodhead Water & Lighting Comm | Open Energy Information  

Open Energy Info (EERE)

Brodhead Water & Lighting Comm Brodhead Water & Lighting Comm Jump to: navigation, search Name Brodhead Water & Lighting Comm Place Wisconsin Utility Id 2273 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png General Service - GS-1 - Single Phase Commercial General Service - GS-1 Three Phase Commercial General-OTD 1-Three Phase Commercial General-OTD- Single Phase Commercial Industrial Power Time of day CP-3 above 1,000kW Demand Primary Metering and Transformer Discount Industrial Industrial Power Time of day CP-3 above 1,000kW Demand Industrial

46

Sleepy Eye Public Utility Comm | Open Energy Information  

Open Energy Info (EERE)

Eye Public Utility Comm Eye Public Utility Comm Jump to: navigation, search Name Sleepy Eye Public Utility Comm Place Minnesota Utility Id 17320 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Electric Heat Residential Industrial Industrial Large General Commercial Residential Residential Security Lighting- 150W Lighting Security Lighting- 175W Lighting Security Lighting- 250W Lighting

47

Newnan Wtr, Sewer & Light Comm | Open Energy Information  

Open Energy Info (EERE)

Newnan Wtr, Sewer & Light Comm Newnan Wtr, Sewer & Light Comm Jump to: navigation, search Name Newnan Wtr, Sewer & Light Comm Place Georgia Utility Id 13547 Utility Location Yes Ownership M NERC Location SERC NERC SERC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Power Rates Commercial Large Power Service Industrial Residential Power Rates Residential Security Lighting - 100 Watt (Decorative) Lighting Security Lighting - 1000 Watt (Directional Flood) Lighting Security Lighting - 1000 Watt (Metal Halide Flood) Lighting Security Lighting - 100W (Cobra or Open) Lighting

48

City of Public Works Comm- Fayetteville, North Carolina (Utility Company) |  

Open Energy Info (EERE)

Works Comm- Fayetteville, North Carolina (Utility Company) Works Comm- Fayetteville, North Carolina (Utility Company) Jump to: navigation, search Name Public Works Comm-City of Fayetteville Place North Carolina Utility Id 6235 Utility Location Yes Ownership M NERC Location SERC NERC SERC Yes ISO Other Yes Operates Generating Plant Yes Activity Generation Yes Activity Buying Transmission Yes Activity Distribution Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png 108 Medium Power Service Industrial 108 Medium Power Service Primary Discount Industrial 110 Small Power Service Commercial

49

Glencoe Light & Power Comm | Open Energy Information  

Open Energy Info (EERE)

Glencoe Light & Power Comm Glencoe Light & Power Comm Jump to: navigation, search Name Glencoe Light & Power Comm Place Minnesota Utility Id 7292 Utility Location Yes Ownership M NERC Location MRO ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes Activity Buying Transmission Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Area/Security Lighting-175 Watt Lighting Area/Security Lighting-400 Watt Lighting Large Industrial Service-Primary Voltage Industrial Large industrial Service-secondary volatge Industrial Residential Service Residential

50

Paragould Light & Water Comm | Open Energy Information  

Open Energy Info (EERE)

Paragould Light & Water Comm Paragould Light & Water Comm Jump to: navigation, search Name Paragould Light & Water Comm Place Arkansas Utility Id 14446 Utility Location Yes Ownership M NERC Location SPP NERC SPP Yes Operates Generating Plant Yes Activity Generation Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Wholesale Marketing Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png General Single Phase Commercial General Three Phase Commercial Industrial Industrial Residential Residential Security Lighting 100 W HPS Lighting

51

Spring Valley Pub Utils Comm | Open Energy Information  

Open Energy Info (EERE)

Comm Comm Jump to: navigation, search Name Spring Valley Pub Utils Comm Place Minnesota Utility Id 17824 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png General Service Commercial Large Commercial (Demand) Commercial Primary Metering Demand Industrial Residential Residential Residential- All Electric Residential Small Commercial (Demand) Commercial Average Rates Residential: $0.1190/kWh Commercial: $0.0964/kWh

52

Wisconsin Rapids W W & L Comm | Open Energy Information  

Open Energy Info (EERE)

Rapids W W & L Comm Rapids W W & L Comm Jump to: navigation, search Name Wisconsin Rapids W W & L Comm Place Wisconsin Utility Id 20862 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Athletic Field Lighting Service Lighting General Service Three Phase Commercial General Service Single Phase Commercial General Service TOU Single Phase (8am to 8pm) Commercial General Service TOU Single Phase(7am to 7pm) Commercial General Service TOU Single Phase(9 am to 9pm) Commercial

53

Public Serv Comm of Yazoo City | Open Energy Information  

Open Energy Info (EERE)

Serv Comm of Yazoo City Serv Comm of Yazoo City Jump to: navigation, search Name Public Serv Comm of Yazoo City Place Mississippi Utility Id 21095 Utility Location Yes Ownership P NERC Location SERC NERC SERC Yes NERC SPP Yes RTO SPP Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Electric - City Commercial Electric - PSC Commercial Electric - Schools Commercial Electric Commercial - Large Commercial Electric Commercial - Seasonal Commercial Electric Commercial - Small Commercial

54

Moose Lake Water & Light Comm | Open Energy Information  

Open Energy Info (EERE)

Lake Water & Light Comm Lake Water & Light Comm Jump to: navigation, search Name Moose Lake Water & Light Comm Place Minnesota Utility Id 12897 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png 2-250HPS-FRO Lighting 250 HPS ELEOLY Lighting 3-250 HPS Lighting 4-250 HPS Lighting 400 HPS Rent Lighting BEST OIL CO Commercial BIKE TRAIL Commercial CIP Commercial Commercial Demand Commercial Commercial Electricity Commercial Demand 1 Phase Industrial

55

Colorado River Comm of Nevada | Open Energy Information  

Open Energy Info (EERE)

Comm of Nevada Comm of Nevada Jump to: navigation, search Name Colorado River Comm of Nevada Place Nevada Utility Id 4356 Utility Location Yes Ownership S NERC Location WECC NERC WECC Yes Activity Transmission Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Buying Distribution Yes Activity Wholesale Marketing Yes Activity Retail Marketing Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] Energy Information Administration Form 826[2] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png No rate schedules available. Average Rates Commercial: $0.0656/kWh The following table contains monthly sales and revenue data for Colorado

56

Waterloo Light & Water Comm | Open Energy Information  

Open Energy Info (EERE)

Waterloo Light & Water Comm Waterloo Light & Water Comm Jump to: navigation, search Name Waterloo Light & Water Comm Place Wisconsin Utility Id 20182 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png General Service Three Phase Commercial General Service Single Phase Commercial General Service TOU Single Phase Commercial General Service TOU Three Phase Commercial Industrial TOU Industrial Large Power TOU Industrial Renewable Energy Rider 1 Commercial Renewable Energy Rider 2 Industrial

57

New Ulm Public Utilities Comm | Open Energy Information  

Open Energy Info (EERE)

Ulm Public Utilities Comm Ulm Public Utilities Comm Jump to: navigation, search Name New Ulm Public Utilities Comm Place Minnesota Utility Id 13488 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png INDUSTRIAL SERVICE RATE Industrial LARGE COMMERCIAL SERVICE RATE Commercial MUNICIPAL-CITY SERVICE RATE Commercial MUNICIPAL-PUC SERVICE RATE Commercial RESIDENTIAL SERVICE RATE Residential SMALL COMMERCIAL SERVICE RATE Commercial WHOLE HOUSE HEATING RATE Residential

58

Grand Rapids Public Util Comm | Open Energy Information  

Open Energy Info (EERE)

Rapids Public Util Comm Rapids Public Util Comm Jump to: navigation, search Name Grand Rapids Public Util Comm Place Minnesota Utility Id 7489 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png CITY COMMERCIAL Commercial CITY LIGHT & POWER Lighting CITY RESIDENTIAL Residential CONTROLLED WATER HEATING (CITY) Commercial CONTROLLED WATER HEATING (RURAL) Commercial ENTERTAINMENT LIGHTING RATE (CITY) Lighting ENTERTAINMENT LIGHTING RATE (RURAL) Lighting INDUSTRIAL (CITY) Industrial

59

Albany Water Gas & Light Comm | Open Energy Information  

Open Energy Info (EERE)

Water Gas & Light Comm Water Gas & Light Comm Jump to: navigation, search Name Albany Water Gas & Light Comm Place Georgia Utility Id 230 Utility Location Yes Ownership M NERC Location SERC NERC SERC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Demand Commercial Commercial Non-Demand Commercial Large Commercial Demand Commercial Residential Residential Security Lights 1000 Watt Metal Halide Metal Pole Lighting Security Lights 1000 Watt Metal Halide Wooden Pole Lighting Security Lights 150 HPSV Fixtures Metal Pole Lighting Security Lights 150 HPSV Fixtures Wooden Pole Lighting

60

Redwood Falls Public Util Comm | Open Energy Information  

Open Energy Info (EERE)

Public Util Comm Public Util Comm Jump to: navigation, search Name Redwood Falls Public Util Comm Place Minnesota Utility Id 15793 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Operates Generating Plant Yes Activity Generation Yes Activity Buying Transmission Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Area lighting 100 watt Lighting Area lighting 1000 watt Lighting Area lighting 150 watt Lighting Area lighting 250 watt Lighting Area lighting 400 watt Lighting Industrial service rate Industrial Large commercial service rate Commercial

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Sun Prairie Water & Light Comm | Open Energy Information  

Open Energy Info (EERE)

Sun Prairie Water & Light Comm Sun Prairie Water & Light Comm Jump to: navigation, search Name Sun Prairie Water & Light Comm Place Wisconsin Utility Id 18312 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Area Lighting 1000w Halide existing poles Lighting Area Lighting 1000w Halide provided poles Lighting Area Lighting 100w HPS existing poles Lighting Area Lighting 100w HPS provided poles Lighting Area Lighting 150w HPS existing poles Lighting

62

Les Roms comme minorit ethnique ? Un questionnement roumain.  

E-Print Network [OSTI]

1 Les Roms comme « minorité ethnique » ? Un questionnement roumain. Martin Olivera Article publié dans Roms et Gens du Voyage, nouvelles perspectives de recherche, Etudes tsiganes, n°39-40, 3ème acquis : les « Roms et Voyageurs » (Roma and Travellers) forment une minorité européenne, comptant entre

Paris-Sud XI, Université de

63

Structure of a Si(100)22-Ga surface  

Science Journals Connector (OSTI)

The 22 structure formed on a Ga-adsorbed Si(100) surface is determined using tensor low-energy electron diffraction. I-V curves of the parallel dimer model are in excellent agreement with those of the experiment, indicating that the actual surface has parallel dimer structure. Specific displacements of the topmost two surface layers (the protrusion of the Ga dimer toward the vacuum, the increase of the bond length of the Ga dimer, the stretching of the Si dimer, and the movement of the Si dimer toward the Ga dimer) with the elongation of the Si dimer back bond are observed in the optimized geometry. The Ga-Si bond angle measured from the Si(100) surface plane is recovered with these displacements from that of the ideal geometry where each bond length is assumed to be the sum of Pauling covalent radii. Subsurface layers are also deformed to keep the bond lengths near their bulk values.

H. Sakama; K. Murakami; K. Nishikata; A. Kawazu

1994-11-15T23:59:59.000Z

64

North Branch Water & Light Comm | Open Energy Information  

Open Energy Info (EERE)

North Branch Water & Light Comm North Branch Water & Light Comm Place Minnesota Utility Id 13681 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes Operates Generating Plant Yes Activity Generation Yes Activity Distribution Yes Activity Bundled Services Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Commercial Large General Service Industrial Residential Residential Residential- Seasonal Residential Average Rates Residential: $0.1250/kWh Commercial: $0.1140/kWh Industrial: $0.0750/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File1_a"

65

Oconto Falls Water & Light Comm | Open Energy Information  

Open Energy Info (EERE)

Oconto Falls Water & Light Comm Oconto Falls Water & Light Comm Place Wisconsin Utility Id 13965 Utility Location Yes Ownership M NERC Location MRO NERC MRO Yes ISO MISO Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Cp-1 Small Power Service Industrial Cp-1 Small Power Service Primary Metering Discount with Parallel Generation(20kW or less) Industrial Cp-1 Small Power Service Primary Metering Discount Industrial Cp-1 Small Power Service with Parallel Generation(20kW or less) Industrial Cp-1 TOD Small Power Optional Time-of-Day Service Primary Metering Discount

66

New Castle Municipal Serv Comm | Open Energy Information  

Open Energy Info (EERE)

New Castle Municipal Serv Comm New Castle Municipal Serv Comm Place Delaware Utility Id 13424 Utility Location Yes Ownership M NERC Location RFC NERC RFC Yes Activity Distribution Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png Commercial Space Heating (Grandfathered) Commercial Large General Service Commercial Demand Rate (Primary) Commercial Large General Service Commercial Demand Rate (Secondary) Commercial Medium General Service Commercial Demand Rate Commercial Residential Service Residential Residential Space Heating Residential Small General Service Commercial Non-Demand Rate Commercial

67

Bonding Tools  

Broader source: Energy.gov [DOE]

Bonds are one of the most common forms of financing used by state and local governments, because they are a low-cost source of capital available to most entities. State and local officials may consider using bonds for a variety of clean energy purposes, including...

68

Four-Junction Solar Cell with 40% Target Efficiency Fabricated by Wafer Bonding and Layer Transfer: Final Technical Report, 1 January 2005 - 31 December 2007  

SciTech Connect (OSTI)

We realized high-quality InGaP/GaAs 2-junction top cells on Ge/Si, InGaAs/InP bottom cells, direct-bond series interconnection of tandem cells, and modeling of bonded 3- and 4-junction device performance.

Atwater, H. A.

2008-11-01T23:59:59.000Z

69

Hydrogen Bonded Arrays: The Power of Multiple Hydrogen Bonds...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Bonded Arrays: The Power of Multiple Hydrogen Bonds. Hydrogen Bonded Arrays: The Power of Multiple Hydrogen Bonds. Abstract: Hydrogen bond interactions in small covalent model...

70

Wafer-Bonded Internal Back-Surface Reflectors for Enhanced TPV Performance  

SciTech Connect (OSTI)

This paper discusses recent efforts to realize GaInAsSb/GaSb TPV cells with an internal back-surface reflector (BSR). The cells are fabricated by wafer bonding the GaInAsSb/GaSb device layers to GaAs substrates with a dielectric/Au reflector, and subsequently removing the GaSb substrate. The internal BSR enhances optical absorption within the device while the dielectric layer provides electrical isolation. This approach is compatible with monolithic integration of series-connected TPV cells and can mitigate the requirements of filters used for front-surface spectral control.

C.A. Wang; P.G. Murphy; P.W. O'Brien; D.A. Shiau; A.C. Anderson; Z.L. Liau; D.M. Depoy; G. Nichols

2002-08-12T23:59:59.000Z

71

Wafer Bonding and Layer Transfer Processes for High Efficiency Solar Cells  

SciTech Connect (OSTI)

A wafer-bonded four-junction cell design consisting of InGaAs, InGaAsP, GaAs, and Ga0.5In0.5P subcells that could reach one-sun AM0 efficiencies of 35.4% is described. The design relies on wafer-bonding and layer transfer for integration of non-lattice-matched subcells. Wafer bonding and layer transfer processes have shown promise in the fabrication of InP/Si epitaxial templates for growth of the bottom InGaAs and InGaAsP subcells on a Si support substrate. Subsequent wafer bonding and layer transfer of a thin Ge layer onto the lower subcell stack can serve as an epitaxial template for GaAs and Ga0.5In0.5P subcells. Additionally, wafer bonded Ge/Si substrates offer the possibility to improve the mechanical performance of existing triple-junction solar cell designs, while simultaneously reducing their cost. Present results indicate that optically active III/V compound semiconductors can be grown on both Ge/Si and InP/Si heterostructures. Current-voltage electrical characterization of the interfaces of these structures indicates that both InP/Si and Ge/Si interfaces have specific resistances lower than 0.1 W?cm2 for heavily doped wafer bonded interfaces, enabling back surface power extraction from the finished cell structure.

Zahler, J. M.; Fontcuberta i Morral, A.; Ahn, C. G.; Atwater, H. A.; Wanlass, M. W.; Chu, C.; Iles, P. A.

2003-05-01T23:59:59.000Z

72

CONOMIE ET STATISTIQUE N 457-458, 201298 L'automobile est parfois perue comme  

E-Print Network [OSTI]

#12;?CONOMIE ET STATISTIQUE N° 457-458, 201298 L'automobile est parfois perçue comme emblématique d'équipement et aux consommations matérielles (Gartman, 1991). Il est ainsi parfois avancé que l'automobile ne- nismes socio-économiques. L'automobile est de ce fait souvent prise comme exemple d'un bien dont les

Paris-Sud XI, Université de

73

de l'manation du thorium, on peut considrer le nombre 9,5 ions comme reprsentant assez bien,  

E-Print Network [OSTI]

75 de l'émanation du thorium, on peut considérer le nombre 9,5 ions comme représentant assez bien

Boyer, Edmond

74

GaN quantum dot superlattices grown by molecular beam epitaxy at high temperature  

E-Print Network [OSTI]

P-based optoelectronic devices with Si microelectronic devices. This method uses a Au-Ge eutectic alloy as the bonding. The realization of integrafion of GaAs- and InP-based optoelectronic devices with Si microelectronic components

75

Electronic properties of the Ga vacancy in GaP(110) surfaces determined by scanning tunneling microscopy  

Science Journals Connector (OSTI)

The electronic properties of uncharged Ga monovacancies in GaP(110) surfaces are determined from voltage-dependent scanning tunneling microscopy images. The signatures of localized defect states in the band gap are analyzed and their spatial location is determined. Empty and occupied defect states exist. Depressed dangling bonds in the occupied-state images indicate an inward relaxation of the neighboring P atoms. The results agree with recent theoretical work.

Ph. Ebert and K. Urban

1998-07-15T23:59:59.000Z

76

Comm. Nonlin. Sci Numer. Simul. 13, (2008), 1256-1263. Discrepancy principle for DSM II  

E-Print Network [OSTI]

Comm. Nonlin. Sci Numer. Simul. 13, (2008), 1256-1263. 1 #12;Discrepancy principle for DSM II A versions of discrepancy principles for the DSM (dynamical systems method) for finding the stopping time of the discrepancy principle for DSM was proved. This version con- sisted in solving the equation for t: ||T-1 a

77

Ontologies et classifications descriptives psychiatriques Au del du DSM : les ontologies comme aide  

E-Print Network [OSTI]

Ontologies et classifications descriptives psychiatriques Au delà du DSM : les ontologies comme'hospi- talisation issus du centre hospitalier Sainte-Anne, les ressources structurées seront la CIM-10, le DSM et problèmes de santé connexes (CIM - World Health Organization (1992)) dont le Chapitre 05 ­ « Troubles men

Paris-Sud XI, Université de

78

Cite this: CrystEngComm, 2013, 15, Calcite formation by hydrothermal carbonation of  

E-Print Network [OSTI]

Cite this: CrystEngComm, 2013, 15, 3392 Calcite formation by hydrothermal carbonation by hydrothermal carbonation of calcium hydroxide by a simulation strategy, in which both the chemical evolution calcite formation by hydrothermal carbonation of portlandite. Calcite is an important ubiquitous mineral

Montes-Hernandez, German

79

Lug A Mug Marketing Campaign One Less Cup Page 1 of 54 COMM 468-202  

E-Print Network [OSTI]

Lug A Mug Marketing Campaign ­ One Less Cup Page 1 of 54 COMM 468-202 Marketing Applications Lug A Mug Marketing Campaign Jasmine Teh Randy Pan Sami Dong Stephanie Gozali Steven Eng Willson Wong Yulichia Ong #12;Lug A Mug Marketing Campaign ­ One Less Cup Page 2 of 54 EXECUTIVE SUMMARY 5 PART I : AMS

80

Ga configurations in hydrogenated amorphous silicon as studied by x-ray photoemission spectroscopy  

Science Journals Connector (OSTI)

Samples of crystalline silicon and glow-discharge-deposited hydrogenated amorphous silicon were doped with gallium by low-energy (4-keV) ion implantation. X-ray photoemission spectroscopy was used to study the chemical-bonding states of the Ga. From Ga 3d core-level studies, we found that elementary interstitial, threefold-coordinated, and fourfold-coordinated Ga coexist in the ion-implanted and annealed amorphous silicon network. The percentage of activated threefold- and fourfold-coordinated Ga atoms is found to increase with increasing annealing temperature, prior to crystallization. The energy released by the amorphous silicon lattice upon annealing contributes to the activation of the gallium from the elementary state to the threefold- or fourfold-coordinated state. No evidence of Ga-H bond formation is found. The percentage of fourfold-coordinated Ga, which we call the doping efficiency, ranges from 5% to 10%, depending upon the thermal treatment.

Z. H. Lu; S. Poulin-Dandurand; E. Sacher; A. Yelon

1990-09-15T23:59:59.000Z

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Analytic bond-order potential for the gallium arsenide system  

Science Journals Connector (OSTI)

An analytic, bond-order potential (BOP) is proposed and parametrized for the gallium arsenide system. The potential addresses primary (?) and secondary (?) bonding and the valence-dependent character of heteroatomic bonding, and it can be combined with an electron counting potential to address the distribution of electrons on the GaAs surface. The potential was derived from a tight-binding description of covalent bonding by retaining the first two levels of an expanded Greens function for the ? and ? bond-order terms. Predictions using the potential were compared with independent estimates for the structures and binding energy of small clusters (dimers, trimers, and tetramers) and for various bulk lattices with coordinations varying from 4 to 12. The structure and energies of simple point defects and melting transitions were also investigated. The relative stabilities of the (001) surface reconstructions of GaAs were well predicted, especially under high-arsenic-overpressure conditions. The structural and binding energy trends of this GaAs BOP generally match experimental observations and ab initio calculations.

D. A. Murdick; X. W. Zhou; H. N. G. Wadley; D. Nguyen-Manh; R. Drautz; D. G. Pettifor

2006-01-20T23:59:59.000Z

82

Hydrogen-bridge bonding on semiconductor surfaces:?Density-functional calculations  

Science Journals Connector (OSTI)

The relative stabilities of hydrogen bridge bonds on diamond C(001), Si(001), Ge(001), and GaAs(001) surfaces have been studied within the framework of density functional theory. Hydrogen-bridge bonds are found to be stable on cation terminated GaAs(001) and almost stable on p-type doped Si(001) surfaces with an excess energy of 0.08eV per bridge. Bridge bonds are unstable on n-type doped Si(001) and anion terminated GaAs(001). H-bridges are metastable on intrinsic group IV surfaces, and the excess energy cost diminishes monotonically across the C-Si-Ge series. In stark contrast with group IV semiconductors, the (21) monohydride dimer structure is not stable on GaAs(001).

J. M. Ripalda; J. D. Gale; T. S. Jones

2004-12-16T23:59:59.000Z

83

AdhesiveBonding.qrk  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Adhesive Bonding Adhesive Bonding Manufacturing Technologies Understanding and controlling the factors that affect adhesion is vital for ensuring consistent successful bonding operations. The Manufacturing Science and Technology Center's research into adhesion is focused on achieving a good initial bond and then understanding the mechanisms leading to eventual bond failure. The department is working to understand crack propagation at the interface and has developed a variety of mechanical testing techniques to evalu- ate this failure mode. The factors affecting wetting and formation of the bond (e.g., contamination, surface roughness) are being explored to further our knowledge. In addition to research into adhesion, we bond and join components for our cus- tomers. Researchers have formulated new

84

Private Activity Revenue Bonds (Maryland)  

Broader source: Energy.gov [DOE]

Private Activity Revenue Bonds are available in the form of both taxable bonds and tax-exempt bonds. Both types of bonds provide access to long-term capital markets for fixed asset financing....

85

Trending: Metal Oxo Bonds  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Trending: Metal Oxo Bonds Trending: Metal Oxo Bonds Trending: Metal Oxo Bonds Print Wednesday, 29 May 2013 00:00 Metal oxides are important for scientific and technical applications in a variety of disciplines, including materials science, chemistry, and biology. Highly covalent metal-oxygen multiple bonds (metal oxos) are the building blocks of metal oxides and have a bearing on the oxide's desirable chemical, magnetic, electronic, and thermal properties. The lack of a more sophisticated grasp of bonding in metal oxides constitutes a roadblock to innovation in a wide variety of important emergent technologies, including industrial catalysis, biomimetic transformations, and artificial photosynthesis. To address this problem, a research team from four national laboratories, three Department of Energy synchrotron user facilities, and the University of Washington has applied spectroscopic and computational analyses to a number of metal oxides, quantifying trends in metal oxo bonding for groups of metals across the periodic table.

86

Qualified Energy Conservation Bonds  

Broader source: Energy.gov [DOE]

A Qualified Energy Conservation Bond (QECB) is a bond that enables qualified state, tribal, and local government issuers to borrow money at attractive rates to fund energy conservation projects (it is important to note that QECBs are not grants). A QECB is among the lowest-cost public financing tools because the U.S. Department of the Treasury subsidizes the issuer's borrowing costs.

87

Trending: Metal Oxo Bonds  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Trending: Metal Oxo Bonds Print Trending: Metal Oxo Bonds Print Metal oxides are important for scientific and technical applications in a variety of disciplines, including materials science, chemistry, and biology. Highly covalent metal-oxygen multiple bonds (metal oxos) are the building blocks of metal oxides and have a bearing on the oxide's desirable chemical, magnetic, electronic, and thermal properties. The lack of a more sophisticated grasp of bonding in metal oxides constitutes a roadblock to innovation in a wide variety of important emergent technologies, including industrial catalysis, biomimetic transformations, and artificial photosynthesis. To address this problem, a research team from four national laboratories, three Department of Energy synchrotron user facilities, and the University of Washington has applied spectroscopic and computational analyses to a number of metal oxides, quantifying trends in metal oxo bonding for groups of metals across the periodic table.

88

Trending: Metal Oxo Bonds  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Trending: Metal Oxo Bonds Print Trending: Metal Oxo Bonds Print Metal oxides are important for scientific and technical applications in a variety of disciplines, including materials science, chemistry, and biology. Highly covalent metal-oxygen multiple bonds (metal oxos) are the building blocks of metal oxides and have a bearing on the oxide's desirable chemical, magnetic, electronic, and thermal properties. The lack of a more sophisticated grasp of bonding in metal oxides constitutes a roadblock to innovation in a wide variety of important emergent technologies, including industrial catalysis, biomimetic transformations, and artificial photosynthesis. To address this problem, a research team from four national laboratories, three Department of Energy synchrotron user facilities, and the University of Washington has applied spectroscopic and computational analyses to a number of metal oxides, quantifying trends in metal oxo bonding for groups of metals across the periodic table.

89

Trending: Metal Oxo Bonds  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Trending: Metal Oxo Bonds Print Trending: Metal Oxo Bonds Print Metal oxides are important for scientific and technical applications in a variety of disciplines, including materials science, chemistry, and biology. Highly covalent metal-oxygen multiple bonds (metal oxos) are the building blocks of metal oxides and have a bearing on the oxide's desirable chemical, magnetic, electronic, and thermal properties. The lack of a more sophisticated grasp of bonding in metal oxides constitutes a roadblock to innovation in a wide variety of important emergent technologies, including industrial catalysis, biomimetic transformations, and artificial photosynthesis. To address this problem, a research team from four national laboratories, three Department of Energy synchrotron user facilities, and the University of Washington has applied spectroscopic and computational analyses to a number of metal oxides, quantifying trends in metal oxo bonding for groups of metals across the periodic table.

90

Trending: Metal Oxo Bonds  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Trending: Metal Oxo Bonds Print Trending: Metal Oxo Bonds Print Metal oxides are important for scientific and technical applications in a variety of disciplines, including materials science, chemistry, and biology. Highly covalent metal-oxygen multiple bonds (metal oxos) are the building blocks of metal oxides and have a bearing on the oxide's desirable chemical, magnetic, electronic, and thermal properties. The lack of a more sophisticated grasp of bonding in metal oxides constitutes a roadblock to innovation in a wide variety of important emergent technologies, including industrial catalysis, biomimetic transformations, and artificial photosynthesis. To address this problem, a research team from four national laboratories, three Department of Energy synchrotron user facilities, and the University of Washington has applied spectroscopic and computational analyses to a number of metal oxides, quantifying trends in metal oxo bonding for groups of metals across the periodic table.

91

Wafer-Level Thermocompression Bonds  

E-Print Network [OSTI]

Thermocompression bonding of gold is a promising technique for achieving low temperature, wafer-level bonding without the application of an electric field or complicated pre-bond cleaning procedure. The presence of a ductile ...

Tsau, Christine H.

92

Characterization of anodic bonding  

E-Print Network [OSTI]

Anodic bonding is a common process used in MicroElectroMechanical Systems (MEMS) device fabrication and packaging. Polycrystalline chemical vapor deposited (CVD) silicon carbide (SiC) is emerging as a new MEMS device and ...

Tudryn, Carissa Debra, 1978-

2004-01-01T23:59:59.000Z

93

The New Chemical Bond  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

off when the first convincing experimental evidence of the phi bond showed up for the thorium sandwich complex, as revealed by its elaborate, never-before-seen symmetry. The...

94

Qualified Energy Conservation Bonds  

Broader source: Energy.gov [DOE]

Provides an in-depth description of qualified energy conservation bonds, including process and mechanics, case studies, utilization trends, barriers, and regulatory and legal issues. Author: Energy Programs Consortium

95

Water's Hydrogen Bond Strength  

E-Print Network [OSTI]

Water is necessary both for the evolution of life and its continuance. It possesses particular properties that cannot be found in other materials and that are required for life-giving processes. These properties are brought about by the hydrogen bonded environment particularly evident in liquid water. Each liquid water molecule is involved in about four hydrogen bonds with strengths considerably less than covalent bonds but considerably greater than the natural thermal energy. These hydrogen bonds are roughly tetrahedrally arranged such that when strongly formed the local clustering expands, decreasing the density. Such low density structuring naturally occurs at low and supercooled temperatures and gives rise to many physical and chemical properties that evidence the particular uniqueness of liquid water. If aqueous hydrogen bonds were actually somewhat stronger then water would behave similar to a glass, whereas if they were weaker then water would be a gas and only exist as a liquid at sub-zero temperatures. The overall conclusion of this investigation is that water's hydrogen bond strength is poised centrally within a narrow window of its suitability for life.

Martin Chaplin

2007-06-10T23:59:59.000Z

96

Stocks, bonds and the  

Science Journals Connector (OSTI)

In this paper, we investigate the relative performance of stocks and bonds for various investment horizons on the French market. We use a new matched block bootstrap approach to take account of estimation risk. Furthermore, in the light of non-normality of returns, we use two different risk approaches as inputs in portfolio optimization: the traditional variance, and a downside risk measure, the semi-variance. Our results suggest that an investor should avoid bonds in the long run due to the time diversification effect.

Gilles Sanfilippo

2003-01-01T23:59:59.000Z

97

Wafer bonded epitaxial templates for silicon heterostructures  

DOE Patents [OSTI]

A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

Atwater, Jr., Harry A. (So. Pasadena, CA); Zahler, James M. (Pasadena, CA); Morral, Anna Fontcubera I (Paris, FR)

2008-03-11T23:59:59.000Z

98

Vacancy-Buckling Model for the (22) GaAs(111) Surface  

Science Journals Connector (OSTI)

A vacancy-buckling model is proposed for the (22) structure of the GaAs(111) surface. The model is confirmed by analysis of low-energy electron diffraction spectra. A reconstruction mechanism, basic to III-V compound surfaces, is proposed which favors equal numbers of dangling bonds on the nearest Ga and As neighbors. This model explains the (22) and (11) periodicities observed on (111) and (110) surfaces, respectively.

S. Y. Tong; G. Xu; W. N. Mei

1984-05-07T23:59:59.000Z

99

Photochemical tissue bonding  

DOE Patents [OSTI]

Photochemical tissue bonding methods include the application of a photosensitizer to a tissue and/or tissue graft, followed by irradiation with electromagnetic energy to produce a tissue seal. The methods are useful for tissue adhesion, such as in wound closure, tissue grafting, skin grafting, musculoskeletal tissue repair, ligament or tendon repair and corneal repair.

Redmond, Robert W. (Brookline, MA); Kochevar, Irene E. (Charlestown, MA)

2012-01-10T23:59:59.000Z

100

Thread bonds in molecules  

E-Print Network [OSTI]

Unusual chemical bonds are proposed. Each bond is almost covalent but is characterized by the thread of a small radius $\\sim 0.6\\times 10^{-11}$cm, between two nuclei in a molecule. The main electron density is concentrated outside the thread as in a covalent bond. The thread is formed by the electron wave function which has a tendency to be singular on it. The singularity along the thread is cut off by electron "vibrations" due to the interaction with zero point electromagnetic oscillations. The electron energy has its typical value of (1-10)eV. Due to the small tread radius the uncertainty of the electron momentum inside the thread is large resulting in a large electron kinetic energy $\\sim 1 MeV$. This energy is compensated by formation of a potential well due to the reduction of the energy of electromagnetic zero point oscillations. This is similar to formation of a negative van der Waals potential. Thread bonds are stable and cannot be created or destructed in chemical or optical processes.

Ivlev, B

2015-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

La fraude scientifique au CNRS Le CNRS, comme tous les tablissements de recherche, est confront la question de la  

E-Print Network [OSTI]

La fraude scientifique au CNRS Le CNRS, comme tous les établissements de recherche, est confronté à la question de la fraude scientifique. Qu'est-ce que la fraude ? trucage, manipulation des données cas individuels)? Il faut distinguer deux situations : - Le cas de fraude peut être découvert par l

van Tiggelen, Bart

102

Lattice dynamics of GaN: Effects of 3d electrons  

Science Journals Connector (OSTI)

We perform first-principles calculations of structural, dielectric, and lattice-dynamical properties of cubic GaN. The equilibrium structure is obtained using the plane-wave pseudopotential approach within the density-functional theory and local-density approximation. The dielectric and vibrational properties are computed within the density-functional perturbation theory. The effect of the Ga 3d electrons is treated by taking into account the nonlinear core corrections for the exchange and correlation energy. The importance of 3d electrons for the bonding strength is determined, and their influence on the dielectric and dynamical properties of GaN is analyzed and discussed.

K. Karch; F. Bechstedt; T. Pletl

1997-08-15T23:59:59.000Z

103

Integration of inverted InGaAs MSM array on Si substrate through low temperature  

E-Print Network [OSTI]

to reduce thermal stress at the interface. Huang et al. [2] presented a thin-film InGaAs MSM PD bonded to Si layers including those on InGaAs MSMs and Si/SiO2 is 860 nm. eching window InP epi-layer SiO2 Si Ti Au Au HCl:H3PO4 (1:1) to open a photodetection window. Citric acid was used to remove the InGaAs etching

Huang, Zhaoran "Rena"

104

Albert Bond | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Bond - Project Officer, Golden Field Office Albert Bond is a Project Officer at the Golden Field Office. Most Recent New Choctaw Nation Recycling Center Posts Quick Results March 8...

105

Opportunities in Bond Financing  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Opportunities in Bond Financing Opportunities in Bond Financing James Dack Vice President Alternative Energy Finance Group Stern Brothers & Co. Seattle, WA 98101 Biogas and Fuel Cells Workshop National Renewable Energy Laboratory Golden, Colorado June 11-13, 2012 2 INTRODUCTION * Stern Brothers, founded in 1917 and headquartered in St. Louis, is an investment banking firm that is focused on project financing (taxable and tax-exempt) for renewable energy, real estate, higher education and healthcare. * Stern's Alternative Energy Finance Group structures and places tax- exempt and taxable debt, and provides financial advisory services for renewable energy projects in the U.S. * Waste-to-energy, second generation biofuels, biochemicals, biomass, solar, wind, landfill gas-to-energy, cogen, CHP, hydro,

106

Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory  

SciTech Connect (OSTI)

Effects of GaSb doping on phase change characteristics of Ge-Sb-Te material are investigated by in situ resistance and x-ray diffraction measurement, optical spectroscopy, and x-ray photoelectron spectroscopy. The crystallization temperature and data retention of Ge-Sb-Te material increase significantly by the addition of GaSb, which results from the high thermal stability of amorphous GaSb. In addition, GaSb-doped Ge-Sb-Te material exhibits faster crystallization speed due to the change in electronic states as a result of the formation of chemical bonds with Ga element. Incorporation of GaSb is highly effective way to enhance the comprehensive performance of Ge-Sb-Te material for phase change memory.

Lu, Yegang [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China) [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Graduate School of Chinese Academy of Sciences, Beijing 100049 (China); Zhang, Zhonghua; Song, Sannian; Cheng, Limin; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)] [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Shen, Xiang; Wang, Guoxiang; Dai, Shixun [Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China)] [Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China)

2013-06-17T23:59:59.000Z

107

Theoretical study of defect formation during the initial stages of native-oxide growth on GaSb (001)  

SciTech Connect (OSTI)

The formation of defects during the initial stages of native-oxide growth on the GaSb (001)-?(4??3) surface has been studied computationally using spin-unrestricted density functional theory. It is found that insertion into a Ga-Sb adatom dimer to form a peroxo Ga-O-O-Sb bridge is the most energetically favorable process with insertion into Ga-Sb back-bonds being somewhat less so. A Ga-O-O-Ga bridge between dimers is also favorable, but Sb-O-O-Sb bridges show little if any stability. In the course of analyzing molecular adsorption, a particularly reactive site has been identified that leads to O{sub 2} dissociation with little or no barrier. This process is initiated in the vicinity of an Sb-Sb dimer in the terminating layer and leads to sub-surface Ga and Sb defect sites (i.e., coordinatively unsaturated atoms) and to strained Ga-Sb bonds that may be susceptible to further O{sub 2} attack. However, the defects formed in these reactions do not produce states in the gap.

Bermudez, V. M., E-mail: victor.bermudez@nrl.navy.mil [Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375 (United States)

2014-04-07T23:59:59.000Z

108

Dire le rel. Let Us Now Praise Famous Men de James Agee et Walker Evans , comme exprience de la reprsentation  

E-Print Network [OSTI]

1 Dire le réel. Let Us Now Praise Famous Men de James Agee et Walker Evans (1941) 1 , comme laisse un excès d'oxygène, excès au sens où Agee 1 James Agee, Walker Evans, Let Us Now Praise Famous Men participaient aux actions du New Deal. Ils commandent donc à l'écrivain James Agee (1909-1955) un reportage

Paris-Sud XI, Université de

109

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

110

Tax credits, exempt bonds hit  

Science Journals Connector (OSTI)

Tax credits, exempt bonds hit ... A tax credit permits a taxpayer to deduct a certain amount from his final tax bill. ...

1967-03-06T23:59:59.000Z

111

Dire le rel. Let Us Now Praise Famous Men de James Agee et Walker Evans (1941)1 comme exprience de la reprsentation  

E-Print Network [OSTI]

1 Dire le réel. Let Us Now Praise Famous Men de James Agee et Walker Evans (1941)1 , comme rédacteurs avaient commandé du sens comme l'on commande un meuble à un 1 James Agee, Walker Evans, Let Us Now participaient aux actions du New Deal. Ils commandent donc à l'écrivain James Agee (1909-1955) un reportage

Paris-Sud XI, Université de

112

GaN High Power Devices  

SciTech Connect (OSTI)

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

113

Bond Programs | Open Energy Information  

Open Energy Info (EERE)

source source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Page Edit History Facebook icon Twitter icon » Bond Programs Jump to: navigation, search Bonds allow governments (and corporations) to raise money by borrowing. A few states and local governments have established bond programs to support energy efficiency and renewable energy for government-owned facilities. After a government has raised an authorized sum of money through the sale of bonds, the money collected is used to improve energy efficiency or to install renewable energy systems on government facilities. The bonding authority is usually reimbursed using the energy savings resulting from these projects. [1]

114

Quantum Confinement in Hydrogen Bond  

E-Print Network [OSTI]

In this work, the quantum confinement effect is proposed as the cause of the displacement of the vibrational spectrum of molecular groups that involve hydrogen bonds. In this approach the hydrogen bond imposes a space barrier to hydrogen and constrains its oscillatory motion. We studied the vibrational transitions through the Morse potential, for the NH and OH molecular groups inside macromolecules in situation of confinement (when hydrogen bonding is formed) and non-confinement (when there is no hydrogen bonding). The energies were obtained through the variational method with the trial wave functions obtained from Supersymmetric Quantum Mechanics (SQM) formalism. The results indicate that it is possible to distinguish the emission peaks related to the existence of the hydrogen bonds. These analytical results were satisfactorily compared with experimental results obtained from infrared spectroscopy.

Santos, Carlos da Silva dos; Ricotta, Regina Maria

2015-01-01T23:59:59.000Z

115

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

116

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

117

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name: GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and...

118

Method for vacuum fusion bonding  

DOE Patents [OSTI]

An improved vacuum fusion bonding structure and process for aligned bonding of large area glass plates, patterned with microchannels and access holes and slots, for elevated glass fusion temperatures. Vacuum pumpout of all components is through the bottom platform which yields an untouched, defect free top surface which greatly improves optical access through this smooth surface. Also, a completely non-adherent interlayer, such as graphite, with alignment and location features is located between the main steel platform and the glass plate pair, which makes large improvements in quality, yield, and ease of use, and enables aligned bonding of very large glass structures.

Ackler, Harold D. (Sunnyvale, CA); Swierkowski, Stefan P. (Livermore, CA); Tarte, Lisa A. (Livermore, CA); Hicks, Randall K. (Stockton, CA)

2001-01-01T23:59:59.000Z

119

Fusion bonding and alignment fixture  

DOE Patents [OSTI]

An improved vacuum fusion bonding structure and process for aligned bonding of large area glass plates, patterned with microchannels and access holes and slots, for elevated glass fusion temperatures. Vacuum pumpout of all the components is through the bottom platform which yields an untouched, defect free top surface which greatly improves optical access through this smooth surface. Also, a completely non-adherent interlayer, such as graphite, with alignment and location features is located between the main steel platform and the glass plate pair, which makes large improvements in quality, yield, and ease of use, and enables aligned bonding of very large glass structures.

Ackler, Harold D. (Sunnyvale, CA); Swierkowski, Stefan P. (Livermore, CA); Tarte, Lisa A. (Livermore, CA); Hicks, Randall K. (Stockton, CA)

2000-01-01T23:59:59.000Z

120

Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy  

SciTech Connect (OSTI)

A GaSb film was grown on a Si(211) substrate using molecular beam epitaxy indicating full lattice relaxation as well as full lattice registration and dislocation-free growth in the plane perpendicular to the [01 - 1]-direction. Heteroepitaxy of GaSb on a Si(211) substrate is dominated by numerous first order and multiple higher order micro-twins. The atomic-resolved structural study of GaSb films by high-angle annular dark-field scanning transmission electron microscopy reveals that slight tilt, along with twinning, favors the lattice registry to Si(211) substrates. Preferential bonding of impinging Ga and Sb atoms at the interface due to two distinctive bonding sites on the Si(211) surface enables growth that is sublattice-ordered and free of anti-phase boundaries. The role of the substrate orientation on the strain distribution of GaSb epilayers is further elucidated by investigating the local change in the lattice parameter using the geometric phase analysis method and hence effectiveness of the lattice tilting in reducing the interfacial strain was confirmed further.

Hosseini Vajargah, S.; Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Ghanad-Tavakoli, S. [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Preston, J. S.; Kleiman, R. N. [Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

2012-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

New Clean Renewable Energy Bonds | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

New Clean Renewable Energy Bonds New Clean Renewable Energy Bonds New clean renewable energy bonds (CREBs) are tax credit bonds, the proceeds of which are used for capital...

122

Qualified Energy Conservation Bonds (QECBs) & New Clean Renewable...  

Energy Savers [EERE]

Qualified Energy Conservation Bonds (QECBs) & New Clean Renewable Energy Bonds (New CREBs) Qualified Energy Conservation Bonds (QECBs) & New Clean Renewable Energy Bonds (New...

123

Covalent Bonding in Actinide Sandwich Molecules  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Covalent Bonding in Actinide Sandwich Molecules Print Glenn Seaborg was one of the first scientists to recognize that differences in the degree of covalent bonding in lanthanide...

124

Beta decay of Ga-62  

E-Print Network [OSTI]

We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

125

Magnetic Testing of Bonded Magnets  

Science Journals Connector (OSTI)

Many techniques exist to characterize the magnetic properties of bonded magnets. We will review the common and not so common techniques in use, with emphasis on the advantages and disadvantages of each one, an...

S. R. Trout

2003-01-01T23:59:59.000Z

126

GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study  

SciTech Connect (OSTI)

The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

2010-10-14T23:59:59.000Z

127

RECIPIENT:Gwinnett Co, GA  

Broader source: Energy.gov (indexed) [DOE]

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

128

Novel GaAs Devices  

Science Journals Connector (OSTI)

As the dimensions of GaAs devices shrink, the effective electron velocity should increase, leading to a shorter transit time and to a ballistic or near-ballistic mode of operation (see Chapter 2). At the same ...

Michael Shur

1987-01-01T23:59:59.000Z

129

The Effect of Offcut Angle on Electrical Conductivity of Direct Wafer-Bonded n-GaAs/n-GaAs Structures for Wafer-Bonded Tandem Solar Cells  

E-Print Network [OSTI]

9: Current vs voltage for various electrical test points of9. Current vs voltage for various electrical test points ofvs voltage (J-V) curves in Figure 11. Our observations indicated that sulfur passivation improves the electrical

Yeung, King Wah Sunny

2012-01-01T23:59:59.000Z

130

Non-bonded ultrasonic transducer  

DOE Patents [OSTI]

A mechanically assembled non-bonded ultrasonic transducer includes a substrate, a piezoelectric film, a wetting agent, a thin metal electrode, and a lens held in intimate contact by a mechanical clamp. No epoxy or glue is used in the assembly of this device.

Eoff, J.M.

1984-07-06T23:59:59.000Z

131

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect (OSTI)

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

132

Electrical characteristics and thermal stability of HfO{sub 2} metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces  

SciTech Connect (OSTI)

HfO{sub 2}/GaSb interfaces fabricated by high-vacuum HfO{sub 2} deposition on clean reconstructed GaSb surfaces were examined to explore a thermally stable GaSb metal-oxide-semiconductor structure with low interface-state density (D{sub it}). Interface Sb-O bonds were electrically and thermally unstable, and post-metallization annealing at temperatures higher than 200?C was required to stabilize the HfO{sub 2}/GaSb interfaces. However, the annealing led to large D{sub it} in the upper-half band gap. We propose that the decomposition products that are associated with elemental Sb atoms act as interface states, since a clear correlation between the D{sub it} and the Sb coverage on the initial GaSb surfaces was observed.

Miyata, Noriyuki, E-mail: nori.miyata@aist.go.jp; Mori, Takahiro; Yasuda, Tetsuji [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Ohtake, Akihiro [National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Ichikawa, Masakazu [The University of Tokyo, Tokyo 113-8656 (Japan)

2014-06-09T23:59:59.000Z

133

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect (OSTI)

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

134

Long Range Bond-Bond Correlations in Dense Polymer Solutions  

Science Journals Connector (OSTI)

The scaling of the bond-bond correlation function P1(s) along linear polymer chains is investigated with respect to the curvilinear distance s along the flexible chain and the monomer density ? via Monte Carlo and molecular dynamics simulations. Surprisingly, the correlations in dense three-dimensional solutions are found to decay with a power law P1(s)?s-? with ?=3/2 and the exponential behavior commonly assumed is clearly ruled out for long chains. In semidilute solutions, the density dependent scaling of P1(s)?g-?0(s/g)-? with ?0=2-2?=0.824 (?=0.588 being Flory's exponent) is set by the number of monomers g(?) in an excluded volume blob. Our computational findings compare well with simple scaling arguments and perturbation calculation. The power-law behavior is due to self-interactions of chains caused by the chain connectivity and the incompressibility of the melt.

J. P. Wittmer; H. Meyer; J. Baschnagel; A. Johner; S. Obukhov; L. Mattioni; M. Mller; A. N. Semenov

2004-09-29T23:59:59.000Z

135

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

SciTech Connect (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

136

State Bond Program | Open Energy Information  

Open Energy Info (EERE)

Bonds allow governments (and corporations) to raise money by borrowing. A Bonds allow governments (and corporations) to raise money by borrowing. A few states and local governments have established bond programs to support energy efficiency and renewable energy for government-owned facilities. After a government has raised an authorized sum of money through the sale of bonds, the money collected is used to improve energy efficiency or to install renewable energy systems on government facilities. The bonding authority is usually reimbursed using the energy savings resulting from these projects. [1] State Bond Program Incentives CSV (rows 1 - 7) Incentive Incentive Type Place Applicable Sector Eligible Technologies Active Energy Efficiency & Renewable Energy Bond Program (New Mexico) State Bond Program New Mexico Schools

137

The Market for Borrowing Corporate Bonds  

E-Print Network [OSTI]

This paper describes the market for borrowing corporate bonds using a comprehensive data set from a major lender. The cost of borrowing corporate bonds is comparable to the cost of borrowing stock, between 10 and 20 basis ...

Asquith, Paul

138

High Efficiency Large Area AlGaAs/GaAs Concentrator Solar Cells  

Science Journals Connector (OSTI)

A 1-kWp ( peak at 100 mw/cm2 incident power dencity ) concentrating photovoltaic array with 180 square Presnel plastic lenses and AlGaAs/GaAs concentrator solar cells has been constructed. The AlGaAs/GaAs concetr...

S. Yoshida; K. Mitsui; T. Oda; Y. Yukimoto

1981-01-01T23:59:59.000Z

139

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response  

E-Print Network [OSTI]

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 Received 27 infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

Jalali. Bahram

140

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network [OSTI]

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network [OSTI]

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

Atwater, Harry

142

Study of bump bonding technology  

SciTech Connect (OSTI)

Pixel detectors proposed for the new generation of hadron collider experiments will use bump-bonding technology based on either indium or Pb/Sn solder to connect the front-end readout chips to the silicon pixel sensors. We have previously reported large-scale tests of the yield using both indium and Pb/Sn solder bump [1]. The conclusion is that both seem to be viable for pixel detectors. We have also carried out studies of various effects (e.g. storage over long period, effect of heating and cooling, and radiation) on both types of bump bonds using daisy-chained parts on a small scale [2], [3]. Overall, these tests showed little changes in the integrity of the bump connections. Nevertheless, questions still remain on the long-term reliability of the bumps due to thermal cycle effects, attachment to a substrate with a different coefficient of thermal expansion (CTE), and radiation.

Selcuk Cihangir et al.

2003-10-17T23:59:59.000Z

143

Bonded, walk-off compensated optical elements  

DOE Patents [OSTI]

A bonded, walk-off compensated crystal, for use with optical equipment, and methods of making optical components including same.

Ebbers, Christopher A. (Livermore, CA)

2003-04-08T23:59:59.000Z

144

Structural properties of Bi-terminated GaAs(001) surface  

Science Journals Connector (OSTI)

Electronic and structural properties of Bi-terminated reconstructions on GaAs(001) surface have been studied by scanning tunneling microscopy (STM) and synchrotron radiation core-level spectroscopy. A 23 monolayer thick Bi-layer was evaporated on a Ga-terminated GaAs(001) surface. By heating the surface, the reconstruction changed from (2נ1) to (2נ4). The ?2 phase with one top Bi dimer and one As or Bi dimer in the third atomic layer per surface unit cell is proposed to explain the STM images of the Bi/GaAs(001)(2נ4) surface heated at 400C. Bi 5d photoemission from the Bi/GaAs(2נ4) consisted of two components suggesting two different bonding sites for Bi atoms on the (2נ4) surface. The variation of the surface sensitivity of the photoemission induced no changes in the intensities of the components indicating that the origins of both components lie in the first surface layer.

M. Ahola-Tuomi; P. Laukkanen; R.E. Perl; M. Kuzmin; J. Pakarinen; I.J. Vyrynen; M. Adell

2006-01-01T23:59:59.000Z

145

Dual passivation of GaAs (110) surfaces using O{sub 2}/H{sub 2}O and trimethylaluminum  

SciTech Connect (OSTI)

The nucleation and passivation of oxide deposition was studied on defect-free GaAs (110) surfaces to understand passivation of surfaces containing only III-V heterobonds. The passivation process on GaAs (110) was studied at the atomic level using scanning tunneling microscopy while the electronic structure was determined by scanning tunneling spectroscopy (STS). The bonding of the oxidant and reductant were modeled with density functional theory. To avoid Fermi level pinning during gate oxide atomic layer deposition, a dual passivation procedure was required using both a reductant, trimethylaluminum (TMA), and an oxidant, O{sub 2} or H{sub 2}O. Dosing GaAs (110) with TMA resulted in the formation of an ordered complete monolayer of dimethylaluminum which passivates the group V dangling bonds but also forms metal-metal bonds with conduction band edge states. These edge states were suppressed by dosing the surface with oxidants O{sub 2} or H{sub 2}O which selectively react with group III-aluminum bonds. The presence of an ordered Al monolayer with a high nucleation density was indirectly confirmed by XPS and STS.

Kent, Tyler J.; Edmonds, Mary [Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093 (United States)] [Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093 (United States); Chagarov, Evgueni [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Droopad, Ravi [Department of Physics, Texas State University, San Marcos, Texas 78666 (United States)] [Department of Physics, Texas State University, San Marcos, Texas 78666 (United States); Kummel, Andrew C. [Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093 (United States) [Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093 (United States); Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States)

2013-12-28T23:59:59.000Z

146

GaAsbased quantum cascade lasers  

Science Journals Connector (OSTI)

...N. Murdin GaAs-based quantum cascade lasers Sirtori H. Page C. Becker...state-of-the-art of GaAs-based quantum cascade lasers. These new light sources...2000.0739 GaAs-based quantum cascade lasers By C. Sirtori, H. Page...

2001-01-01T23:59:59.000Z

147

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

148

Metallic bonding in magnesium microclusters  

Science Journals Connector (OSTI)

We investigate the size evolution of bonding in magnesium clusters Mgn, with n?20. Computations are performed in the density-functional scheme with two prescriptions for the exchange-correlation energy: the local-density approximation (LDA), and an improved scheme including gradient corrections (GC). The LDA results show that Mg10 clusters already have acquired several of the characteristic features of metallic aggregates. GC significantly decrease the cohesive energies, and predict a slower convergence with n to the bulk, without changing, however, the qualitative picture given by LDA.

P. Delaly; P. Ballone; J. Buttet

1992-02-15T23:59:59.000Z

149

Coulomb excitation of 73Ga  

E-Print Network [OSTI]

The B(E2; Ii -> If) values for transitions in 71Ga and 73Ga were deduced from a Coulomb excitation experiment at the safe energy of 2.95 MeV/nucleon using post-accelerated beams of 71,73Ga at the REX-ISOLDE on-line isotope mass separator facility. The emitted gamma rays were detected by the MINIBALL-detector array and B(E2; Ii->If) values were obtained from the yields normalized to the known strength of the 2+ -> 0+ transition in the 120Sn target. The comparison of these new results with the data of less neutron-rich gallium isotopes shows a shift of the E2 collectivity towards lower excitation energy when adding neutrons beyond N = 40. This supports conclusions from previous studies of the gallium isotopes which indicated a structural change in this isotopical chain between N = 40 and N = 42. Combined with recent measurements from collinear laser spectroscopy showing a 1/2- spin and parity for the ground state, the extracted results revealed evidence for a 1/2-; 3/2- doublet near the ground state in 73 31Ga42 differing by at most 0.8 keV in energy.

J. Diriken; I. Stefanescu; D. Balabanski; N. Blasi; A. Blazhev; N. Bree; J. Cederkll; T. E. Cocolios; T. Davinson; J. Eberth; A. Ekstrm; D. V. Fedorov; V. N. Fedosseev; L. M. Fraile; S. Franchoo; G. Georgiev; K. Gladnishki; M. Huyse; O. V. Ivanov; V. S. Ivanov; J. Iwanicki; J. Jolie; T. Konstantinopoulos; Th. Krll; R. Krcken; U. Kster; A. Lagoyannis; G. Lo Bianco; P. Maierbeck; B. A. Marsh; P. Napiorkowski; N. Patronis; D. Pauwels; P. Reiter; M. Seliverstov; G. Sletten; J. Van de Walle; P. Van Duppen; D. Voulot; W. B. Walters; N. Warr; F. Wenander; K. Wrzosek

2010-10-13T23:59:59.000Z

150

Charakterisierung und Prparation von GaN und Herstellung von In-Plane-Gate Transistoren in AlxGa1-xN/GaN Heterostrukturen.  

E-Print Network [OSTI]

??Gegenstand der Arbeit sind GaN-Volumenmaterial und AlxGa1-xN/GaN HEMTs (high electron mobility transistor), welche ein zweidimensionales Elektronengas (2DEG) besitzen. Die Materialien wurden durch elektrische Messungen, insbesondere (more)

Ebbers, Andr

2003-01-01T23:59:59.000Z

151

Contact Information Updated: June 17, 2014 Co. Comm/Sealer Address Telephone/Fax General County E-Mail/Office Hours  

E-Print Network [OSTI]

Contact Information Updated: June 17, 2014 Co. Comm/Sealer Address Telephone/Fax General County E-F: 8-5 El Centro, 92243-2850 Inyo/Mono County Srvs Bldg, 207 W South St (760) 873-7860 inyomonoag-6300 agcomm@co.kern.ca.us Ruben Arroyo Bakersfield, 93307-2857 (661) 868-6301 M-F: 8-5 Kings 680 N Campus

152

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect (OSTI)

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

153

Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys  

Science Journals Connector (OSTI)

Using large (512-atom) pseudopotential supercell calculations, we have investigated the composition dependence of the momentum matrix element Mv,c for transitions between the valence-band maximum and the conduction-band minimum of three semiconductor alloys:?GaP1-xNx and GaAs1-xNx, exhibiting large chemical and size differences between their alloyed elements, and GaP1-xAsx, which is a weakly perturbed alloy. In the composition ranges where these alloys have a direct band gap, we find that (i) in GaP1-xAsx, Mv,c is large (like the virtual-crystal value) and nearly composition independent; (ii) in GaAs1-xNx, Mv,c is strongly composition dependent: large for small x and small for large x; and (iii) in GaP1-xNx, Mv,c is only slightly composition dependent and is significantly reduced relative to the virtual-crystal value. The different behavior of GaP1-xAsx, GaP1-xNx, and GaAs1-xNx is traced to the existence/absence of impurity levels at the dilute alloy limits: (a) there are no gap-level impurity states at the x?1 or x?0 limits of GaP1-xAsx, (b) an isolated As impurity in GaN (GaN?:As) has a deep band gap impurity level but no deep impurity state is found for N in GaAs, and (c) GaN?:P exhibits a P-localized deep band-gap impurity state and GaP?:N has an N-localized resonant state. The existence of deep levels leads to wave-function localization in real space, thus to a spectral spread in momentum space and to a reduction of Mv,c. These impurity levels are facilitated by atomic relaxations, as evident by the fact that unrelaxed GaN?:As and GaN?:P, show no deep levels, have extended wave functions, and have large interband transition elements.

L. Bellaiche; Su-Huai Wei; Alex Zunger

1997-10-15T23:59:59.000Z

154

Public Bonding Options | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

While the revenue stream need not be directly related to the financed project, capital lease revenue bonds entail a third party guaranteeing an energy savings revenue stream,...

155

Hydrogen Adsorption Induces Interlayer Carbon Bond Formation...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Hydrogen Adsorption Induces Interlayer Carbon Bond Formation in Supported Few-Layer Graphene Friday, February 28, 2014 Among the allotropes of carbon, diamond has some of the most...

156

Nuclear reactor multiphysics via bond graph formalism  

E-Print Network [OSTI]

This work proposes a simple and effective approach to modeling nuclear reactor multiphysics problems using bond graphs. Conventional multiphysics simulation paradigms normally use operator splitting, which treats the ...

Sosnovsky, Eugeny

2014-01-01T23:59:59.000Z

157

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect (OSTI)

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

158

Princeton Plasma Physics Lab - General Atomics (GA)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
159

EPARTMENT OF COMM NATIONALOCEA  

E-Print Network [OSTI]

T M E N T O F C O M M E R C E fact sheet | NOAA.gov (continued on next page) SEAFOOD & HUMAN HEALTH Seafood inspectors T he connection between seafood and health is undeniable, yet information available of Commerce, NOAA and NOAA's Fisheries Service have an obligation to help make information about seafood

160

EPARTMENT OF COMM NATIONALOCEA  

E-Print Network [OSTI]

to use aquaculture to become more self-sufficient in the production of seafood--also known as fish domestic supply to meet the nation's growing demand for seafood; · Establish aquaculture as a viable: · The United States will need an additional two million metric tons of seafood by 2025, even with wild caught

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

EPARTMENT OF COMM NATIONALOCEA  

E-Print Network [OSTI]

dangerous weather conditions, from hurricanes and tornadoes, to floods and snowstorms. Satellites also watch satellites it operates and sends the information to its key user ­ NOAA's National Weather Service. The National Weather Service uses this satellite data to help create weather and climate forecasts and models

162

Bond Strength of Grade 100 Reinforcing Steel  

E-Print Network [OSTI]

The bond strength of Grade 100 ASTM A 1035 reinforcing steel manufactured by MMFX Technologies Corp. is evaluated with respect to bond strength equations found in ACI 318-05 and ACI 408R-03. Test specimens are fullscale beam-splice specimens tested...

Miller, Shelby

2007-12-14T23:59:59.000Z

163

Initiation of a passivated interface between hafnium oxide and In(Ga)As(0 0 1)-(4x2)  

SciTech Connect (OSTI)

Hafnium oxide interfaces were studied on two related group III rich semiconductor surfaces, InAs(0 0 1)-(4x2) and In{sub 0.53}Ga{sub 0.47}As(0 0 1)-(4x2), via two different methods: reactive oxidation of deposited Hf metal and electron beam deposition of HfO{sub 2}. The interfaces were investigated with scanning tunneling microscopy and spectroscopy (STS). Single Hf atom chemisorption sites were identified that are resistant to oxidation by O{sub 2}, but Hf islands are reactive to O{sub 2}. After e{sup -} beam deposition of <<1 ML of HfO{sub 2}, single chemisorption sites were identified. At low coverage (<1 ML), the n-type and p-type HfO{sub 2}/InGaAs(0 0 1)-(4x2) interfaces show p-type character in STS, which is typical of clean InGaAs(0 0 1)-(4x2). After annealing below 200 deg. C, full coverage HfO{sub 2}/InGaAs(0 0 1)-(4x2) (1-3 ML) has the surface Fermi level shifted toward the conduction band minimum for n-type InGaAs, but near the valence band maximum for p-type InGaAs. This is consistent with the HfO{sub 2}/InGaAs(0 0 1)-(4x2) interface being at least partially unpinned, i.e., a low density of states in the band gap. The partially unpinned interface results from the modest strength of the bonding between HfO{sub 2} and InGaAs(0 0 1)-(4x2) that prevents substrate atom disruption. The fortuitous structure of HfO{sub 2} on InAs(0 0 1)-(4x2) and InGaAs(0 0 1)-(4x2) allows for the elimination of the partially filled dangling bonds on the surface, which are usually responsible for Fermi level pinning.

Clemens, Jonathon B.; Bishop, Sarah R.; Kummel, Andrew C. [Department of Chemistry and Biochemistry, University of California, San Diego, 9500 Gilman Dr., 0358, La Jolla, California 92093-0358 (United States); Lee, Joon Sung [Department of Chemistry and Biochemistry/Materials Science and Engineering Program, University of California, San Diego, 9500 Gilman Dr., 0358, La Jolla, California 92093-0358 (United States); Droopad, Ravi [Department of Physics, Texas State University-San Marcos, San Marcos, Texas 78666 (United States)

2010-06-28T23:59:59.000Z

164

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

SciTech Connect (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

165

Effect of nanoscale surface roughness on the bonding energy of direct-bonded silicon wafers  

Science Journals Connector (OSTI)

Direct wafer bonding of silicon wafers is a promising technology for manufacturing three-dimensional complex microelectromechanical systems as well as silicon-on-insulator substrates. Previous work has reported that the bond quality declines with increasing surface roughness however this relationship has not been quantified. This article explicitly correlates the bond quality which is quantified by the apparent bonding energy and the surface morphology via the bearing ratio which describes the area of surface lying above a given depth. The apparent bonding energy is considered to be proportional to the real area of contact. The effective area of contact is defined as the area sufficiently close to contribute to the attractive force between the two bonding wafers. Experiments were conducted with silicon wafers whose surfaces were roughened by a buffered oxide etch solution (BOE HF:NH 4 F =1:7) and/or a potassium hydroxide solution. The surface roughness was measured by atomic force microscopy. The wafers were direct bonded to polished monitor wafers following a standard RCA cleaning and the resulting bonding energy was measured by the crack-opening method. The experimental results revealed a clear correlation between the bonding energy and the bearing ratio. A bearing depth of ?1.4 nm was found to be appropriate for the characterization of direct-bonded silicon at room temperature which is consistent with the thickness of the water layer at the interface responsible for the hydrogen bonds that link the mating wafers.

N. Miki; S. M. Spearing

2003-01-01T23:59:59.000Z

166

Solving the Mystery of the Billion-Dollar Bond, Double Bond | Department of  

Broader source: Energy.gov (indexed) [DOE]

Solving the Mystery of the Billion-Dollar Bond, Double Bond Solving the Mystery of the Billion-Dollar Bond, Double Bond Solving the Mystery of the Billion-Dollar Bond, Double Bond October 26, 2011 - 4:56pm Addthis John Shanklin, biochemist at Brookhaven National Laboratory, and Ed Whittle, research assistant in Shanklin's lab, with a fatty acid molecule model and plant seeds and casings in the foreground. | Courtesy of Brookhaven National Laboratory John Shanklin, biochemist at Brookhaven National Laboratory, and Ed Whittle, research assistant in Shanklin's lab, with a fatty acid molecule model and plant seeds and casings in the foreground. | Courtesy of Brookhaven National Laboratory Charles Rousseaux Charles Rousseaux Senior Writer, Office of Science What are the key facts? Understanding how proteins exert precise control over double bond

167

Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

168

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network [OSTI]

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

169

Determinants of bond market development in Asia  

Science Journals Connector (OSTI)

One of the major reasons behind the Asian financial crisis in 1997 was the excessive dependence of the Asian economies on commercial banks for domestic financing. The region failed to diversify its sources of corporate financing as it relied mainly on banks since its other types of financing, namely bond markets, were still underdeveloped and their sizes were quite small. On the other hand, the 2008 global financial crisis and the ongoing European debt crisis have led to constraints in acquiring local currency and foreign currency liquidity in the corporate sector in Asia as foreign banks withdrew investments from Asia. Furthermore, Asia needs large long term capital (US$ 750 billion per year for 20102020) for developing infrastructure connectivity within and across its economies. Local and regional capital can be channeled for long-term infrastructure projects and other productive investment through bond markets. Having a well-developed local currency bond markets can enhance the resilience of domestic financial sector to external shocks and it can facilitate better intermediation of savings into productive investments in Asia. To enhance corporate bond financing, it is important to examine factors that affect the effective development of bond markets in Asia. The study attempts to identify the determinants of bond market development in Asian economies through examining the relationship of bond issuance with selected key financial and economic factors. It also intends to provide policy recommendations for the further development of the Asian bond market. Major determinants for bond market development in Asia include the size of an economy, the stage of economic development, the openness of an economy, the exchange rate variability, the size of the banking system, and interest rate variability.

Biswa Nath Bhattacharyay

2013-01-01T23:59:59.000Z

170

Process Of Bonding Copper And Tungsten  

DOE Patents [OSTI]

Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by sintering a stack of individual copper and tungsten powder blend layers having progressively higher copper content/tungsten content, by volume, ratio values in successive powder blend layers in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.

Slattery, Kevin T. (St. Charles, MO); Driemeyer, Daniel E. (Manchester, MO); Davis, John W. (Ballwin, MO)

2000-07-18T23:59:59.000Z

171

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

172

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

173

Municipal Bond - Power Purchase Agreement Model Continues to...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Municipal Bond - Power Purchase Agreement Model Continues to Provide Low-Cost Solar Energy Municipal Bond - Power Purchase Agreement Model Continues to Provide Low-Cost Solar...

174

Hydrogen-bond acidic functionalized carbon nanotubes (CNTs) with...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Hydrogen-bond acidic functionalized carbon nanotubes (CNTs) with covalently-bound hexafluoroisopropanol groups. Hydrogen-bond acidic functionalized carbon nanotubes (CNTs) with...

175

Atomistic modeling of amorphous silicon carbide using a bond...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

modeling of amorphous silicon carbide using a bond-order potential. Atomistic modeling of amorphous silicon carbide using a bond-order potential. Abstract: Molecular dynamics...

176

Bond Energies in Models of the Schrock Metathesis Catalyst. ...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Energies in Models of the Schrock Metathesis Catalyst. Bond Energies in Models of the Schrock Metathesis Catalyst. Abstract: Heats of formation, adiabatic and diabatic bond...

177

Atoms in Valence Bond. Method, implementation and application.  

E-Print Network [OSTI]

??The Atoms in Valence Bond (AiVB) approach is presented. The main goal was to develop a new and innovative approach, within the existing Valence Bond (more)

Zielinski, M.L.

2012-01-01T23:59:59.000Z

178

Energetics of Hydrogen Bond Network Rearrangements in Liquid...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Energetics of Hydrogen Bond Network Rearrangements in Liquid Water Energetics of Hydrogen Bond Network Rearrangements in Liquid Water Print Wednesday, 25 May 2005 00:00 The unique...

179

Three Hydrogen Bond Donor Catalysts: Oxyanion Hole Mimics and...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Hydrogen Bond Donor Catalysts: Oxyanion Hole Mimics and Transition State Analogues. Three Hydrogen Bond Donor Catalysts: Oxyanion Hole Mimics and Transition State Analogues....

180

IRS Announces New Tribal Economic Development Bond Allocation...  

Broader source: Energy.gov (indexed) [DOE]

IRS Announces New Tribal Economic Development Bond Allocation Guidance IRS Announces New Tribal Economic Development Bond Allocation Guidance July 18, 2012 - 3:46pm Addthis To...

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Hydrogen-Bond Acidic Polymers for Chemical Vapor Sensing. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Acidic Polymers for Chemical Vapor Sensing. Hydrogen-Bond Acidic Polymers for Chemical Vapor Sensing. Abstract: A review with 171 references. Hydrogen-bond acidic polymers for...

182

Covalency in Metal-Oxygen Multiple Bonds Evaluated Using Oxygen...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Covalency in Metal-Oxygen Multiple Bonds Evaluated Using Oxygen K-edge Spectroscopy and Electronic Structure Theory . Covalency in Metal-Oxygen Multiple Bonds Evaluated Using...

183

International political risk and government bond pricing  

Science Journals Connector (OSTI)

Abstract This paper investigates the impact of international political risk on government bond yields in 34 debtor countries using a comprehensive database of 109 international political crises from 1988 through 2007. After employing the total number of international political crises as a proxy for political risk and controlling for country-specific economic conditions, we establish a positive and significant link between international political risk and government bond yields. This is consistent with global bond investors demanding higher returns at times of high political uncertainty. In addition, we show that international political risk has a reduced adverse effect on bond prices when the debtor country has a stable political system and strong investor protection.

Tao Huang; Fei Wu; Jing Yu; Bohui Zhang

2014-01-01T23:59:59.000Z

184

Industrial Revenue Bond Program (District of Columbia)  

Broader source: Energy.gov [DOE]

The District provides below market bond financing to lower the costs of borrowing for qualified capital construction and renovation projects. The program is available to non-profits, institutions,...

185

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network [OSTI]

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

186

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect (OSTI)

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

187

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect (OSTI)

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

188

Ohmic contacts to n-GaSb  

E-Print Network [OSTI]

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

189

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect (OSTI)

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

190

Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy  

SciTech Connect (OSTI)

GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-04T23:59:59.000Z

191

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

192

Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction  

Science Journals Connector (OSTI)

We report a nondestructive large-area method to characterize dislocation formation at a highly lattice-mismatched interface. The analysis is based on x-ray diffraction and reciprocal space mapping using a standard lab-based diffractometer. We use this technique to identify and analyze a two-dimensional array of 90 misfit dislocations at a GaSb/GaAs interface. The full width at half maximum of the GaSb 004 reciprocal lattice point is shown to decrease with increasing GaSb epilayer thickness as expected from theoretical models. Based on these measurements the variation in the spatial dislocation frequency is calculated to be 1%.

Charles J. Reyner; Jin Wang; Kalyan Nunna; Andrew Lin; Baolai Liang; Mark S. Goorsky; D. L. Huffaker

2011-01-01T23:59:59.000Z

193

GaNInGaN LED efficiency reduction from parasitic electron currents in p-GaN  

Science Journals Connector (OSTI)

Abstract This paper presents observations of a previously unidentified source of performance limitation for GaNInGaN LED devices. While most studies focus on output saturation known as current droop from InGaN layer effects, we show an alike influence from p-type GaNs inherent background electron concentration. p-GaN material was investigated to confirm that, even though the material had an excess of holes, the background electrons were indeed present and were influencing the charge flow across device electrodes. This current does not cross LED heterojunctions but rather drifts toward its proximal device electrode, causing a source of heating while providing no carriers for light emitting recombination. The effects of this current were explored in an LED configuration, whose output showed weak efficiency at very low biases in addition to that from current droop. While the shortcoming under small currents has previously been attributed to electron tunneling across the junction, we propose that the background electrons inside p-GaN could be another explanation.

G. Togtema; V. Georgiev; D. Georgieva; R. Gergova; K.S.A. Butcher; D. Alexandrov

2015-01-01T23:59:59.000Z

194

Qualified Energy Conservation Bond State-by-State Summary Tables  

Broader source: Energy.gov [DOE]

Provides a list of qualified energy conservation bond state summary tables. Author: Energy Programs Consortium

195

Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy  

SciTech Connect (OSTI)

The atomic-resolved reversal of the polarity across an antiphase boundary (APB) was observed in GaSb films grown on Si by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The investigation of the interface structure at the origin of the APB reveals that coalescence of two domains with Ga-prelayer and Sb-prelayer causes the sublattice reversal. The local strain and lattice rotation distributions of the APB, attributed to the discordant bonding length at the APB with the surrounding GaSb lattice, were further studied using the geometric phase analysis technique. The crystallographic characteristics of the APBs and their interaction with other planar defects were observed with HAADF-STEM. The quantitative agreement between experimental and simulated images confirms the observed polarities in the acquired HAADF-STEM data. The self-annihilation mechanism of the APBs is addressed based on the rotation induced by anti-site bonds and APBs' faceting.

Hosseini Vajargah, S.; Woo, S. Y.; Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Brockhouse Institute for Material Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Ghanad-Tavakoli, S. [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Kleiman, R. N.; Preston, J. S. [Brockhouse Institute for Material Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

2012-11-01T23:59:59.000Z

196

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

197

Hydrogen Bond Networks: Structure and Evolution after Hydrogen Bond Breaking John B. Asbury, Tobias Steinel, and M. D. Fayer*  

E-Print Network [OSTI]

Hydrogen Bond Networks: Structure and Evolution after Hydrogen Bond Breaking John B. Asbury, TobiasVed: September 1, 2003; In Final Form: December 18, 2003 The nature of hydrogen bonding networks following hydrogen bond breaking is investigated using vibrational echo correlation spectroscopy of the hydroxyl

Fayer, Michael D.

198

Qualified Energy Conservation Bond (QECB) Update: New  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

8, 2012 8, 2012 Qualified Energy Conservation Bond (QECB) Update: New Guidance from the U.S. Department of Treasury and the Internal Revenue Service Qualified Energy Conservation Bonds (QECBs) are federally-subsidized bonds that enable state, tribal, and local government issuers to borrow money to fund a range of energy conservation projects at very attractive borrowing rates over long contract terms. In June 2012, the U.S. Department of the Treasury (Treasury) and the Internal Revenue Service (IRS) published a notice to clarify what constitutes a qualified project for potential issuers of the approximately $2.5 billion of remaining QECB issuance capacity. The guidance addresses two qualified uses of QECB proceeds-how issuers should measure energy use reductions in publicly-owned buildings and what constitutes a green community program.

199

Bonded ultrasonic transducer and method for making  

DOE Patents [OSTI]

An ultrasonic transducer is formed as a diffusion bonded assembly of piezoelectric crystal, backing material, and, optionally, a ceramic wear surface. The mating surfaces of each component are silver films that are diffusion bonded together under the application of pressure and heat. Each mating surface may also be coated with a reactive metal, such as hafnium, to increase the adhesion of the silver films to the component surfaces. Only thin silver films are deposited, e.g., a thickness of about 0.00635 mm, to form a substantially non-compliant bond between surfaces. The resulting transducer assembly is substantially free of self-resonances over normal operating ranges for taking resonant ultrasound measurements. 12 figs.

Dixon, R.D.; Roe, L.H.; Migliori, A.

1995-11-14T23:59:59.000Z

200

Epoxy bond and stop etch fabrication method  

DOE Patents [OSTI]

A class of epoxy bond and stop etch (EBASE) microelectronic fabrication techniques is disclosed. The essence of such techniques is to grow circuit components on top of a stop etch layer grown on a first substrate. The first substrate and a host substrate are then bonded together so that the circuit components are attached to the host substrate by the bonding agent. The first substrate is then removed, e.g., by a chemical or physical etching process to which the stop etch layer is resistant. EBASE fabrication methods allow access to regions of a device structure which are usually blocked by the presence of a substrate, and are of particular utility in the fabrication of ultrafast electronic and optoelectronic devices and circuits.

Simmons, Jerry A. (Sandia Park, NM); Weckwerth, Mark V. (Pleasanton, CA); Baca, Wes E. (Albuquerque, NM)

2000-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Bonded ultrasonic transducer and method for making  

DOE Patents [OSTI]

An ultrasonic transducer is formed as a diffusion bonded assembly of piezoelectric crystal, backing material, and, optionally, a ceramic wear surface. The mating surfaces of each component are silver films that are diffusion bonded together under the application of pressure and heat. Each mating surface may also be coated with a reactive metal, such as hafnium, to increase the adhesion of the silver films to the component surfaces. Only thin silver films are deposited, e.g., a thickness of about 0.00635 mm, to form a substantially non-compliant bond between surfaces. The resulting transducer assembly is substantially free of self-resonances over normal operating ranges for taking resonant ultrasound measurements.

Dixon, Raymond D. (Los Alamos, NM); Roe, Lawrence H. (Los Alamos, NM); Migliori, Albert (Santa Fe, NM)

1995-01-01T23:59:59.000Z

202

Process Of Bonding Copper And Tungsten  

DOE Patents [OSTI]

Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by thermal plasma spraying mixtures of copper powder and tungsten powder in a varied blending ratio such that the blending ratio of the copper powder and the tungsten powder that is fed to a plasma torch is intermittently adjusted to provide progressively higher copper content/tungsten content, by volume, ratio values in the interlayer in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.

Slattery, Kevin T. (St. Charles, MO); Driemeyer, Daniel E. (Manchester, MO)

1999-11-23T23:59:59.000Z

203

Adhesive bonding using variable frequency microwave energy  

DOE Patents [OSTI]

Methods of facilitating the adhesive bonding of various components with variable frequency microwave energy are disclosed. The time required to cure a polymeric adhesive is decreased by placing components to be bonded via the adhesive in a microwave heating apparatus having a multimode cavity and irradiated with microwaves of varying frequencies. Methods of uniformly heating various articles having conductive fibers disposed therein are provided. Microwave energy may be selectively oriented to enter an edge portion of an article having conductive fibers therein. An edge portion of an article having conductive fibers therein may be selectively shielded from microwave energy.

Lauf, Robert J. (Oak Ridge, TN); McMillan, April D. (Knoxville, TN); Paulauskas, Felix L. (Oak Ridge, TN); Fathi, Zakaryae (Cary, NC); Wei, Jianghua (Raleigh, NC)

1998-01-01T23:59:59.000Z

204

Adhesive bonding using variable frequency microwave energy  

DOE Patents [OSTI]

Methods of facilitating the adhesive bonding of various components with variable frequency microwave energy are disclosed. The time required to cure a polymeric adhesive is decreased by placing components to be bonded via the adhesive in a microwave heating apparatus having a multimode cavity and irradiated with microwaves of varying frequencies. Methods of uniformly heating various articles having conductive fibers disposed therein are provided. Microwave energy may be selectively oriented to enter an edge portion of an article having conductive fibers therein. An edge portion of an article having conductive fibers therein may be selectively shielded from microwave energy. 26 figs.

Lauf, R.J.; McMillan, A.D.; Paulauskas, F.L.; Fathi, Z.; Wei, J.

1998-09-08T23:59:59.000Z

205

Adhesive bonding using variable frequency microwave energy  

DOE Patents [OSTI]

Methods of facilitating the adhesive bonding of various components with variable frequency microwave energy are disclosed. The time required to cure a polymeric adhesive is decreased by placing components to be bonded via the adhesive in a microwave heating apparatus having a multimode cavity and irradiated with microwaves of varying frequencies. Methods of uniformly heating various articles having conductive fibers disposed therein are provided. Microwave energy may be selectively oriented to enter an edge portion of an article having conductive fibers therein. An edge portion of an article having conductive fibers therein may be selectively shielded from microwave energy. 26 figs.

Lauf, R.J.; McMillan, A.D.; Paulauskas, F.L.; Fathi, Z.; Wei, J.

1998-08-25T23:59:59.000Z

206

Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of InGaAlP Compound Semiconductor System  

SciTech Connect (OSTI)

Current and future generations of sophisticated compound semiconductor devices require the ability for submicron scale patterning. The situation is being complicated since some of the new devices are based on a wider diversity of materials to be etched. Conventional IUE (Reactive Ion Etching) has been prevalent across the industry so far, but has limitations for materials with high bond strengths or multiple elements. IrI this paper, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma), for the etching of ternary compound semiconductors (InGaP, AIInP, AlGaP) which are employed for electronic devices like heterojunction bipolar transistors (HBTs) or high electron mobility transistors (HEMTs), and photonic devices such as light-emitting diodes (LEDs) and lasers. High density plasma sources, opeiating at lower pressure, are expected to meet target goals determined in terms of etch rate, surface morphology, surface stoichiometry, selectivity, etc. The etching mechanisms, which are described in this paper, can also be applied to other III-V (GaAs-based, InP-based) as well as III-Nitride since the InGaAIP system shares many of the same properties.

Abernathy, C.R.; Hobson, W.S.; Hong, J.; Lambers, E.S.; Pearton, S.J.; Shul, R.J.

1998-11-04T23:59:59.000Z

207

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

208

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect (OSTI)

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

209

Bond Underwriter Costs: Texas School Districts and the Hidden Cost of Issuing Bonds  

E-Print Network [OSTI]

dramatically across Texas school districts, both in total and as a percentage of the total amount borrowed. As an example, in 2008 Alto ISD issued $6.3 million in bonds and Glen Rose ISD borrowed $6.2 million. The underwriter for Glen Rose earned $38...,936 in fees; the underwriter on the Alto deal earned $193,712, nearly five times that amount. On a per bond basis, Glen Rose paid .628%, while Alto paid more than 3%. An examination of bond issues across the state demonstrates similar variations...

Stasny, Mary Knetsar

2011-02-22T23:59:59.000Z

210

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

211

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

212

Tax-Exempt Industrial Revenue Bonds (Kansas) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Industrial Revenue Bonds (Kansas) Industrial Revenue Bonds (Kansas) Tax-Exempt Industrial Revenue Bonds (Kansas) < Back Eligibility Agricultural Commercial Construction Industrial Utility Savings Category Alternative Fuel Vehicles Hydrogen & Fuel Cells Buying & Making Electricity Water Home Weatherization Solar Wind Program Info State Kansas Program Type Bond Program Provider Revenue Tax-Exempt Industrial Revenue Bonds are issued by cities and counties for the purchase, construction, improvement or remodeling of a facility for agricultural, commercial, hospital, industrial, natural resources, recreational development or manufacturing purposes. The board of county commissioners of any county or the governing body of any city may approve an exemption of property funded by industrial revenue bonds (IRB's). Some

213

Dynamic force spectroscopy on multiple bonds: experiments and model  

E-Print Network [OSTI]

We probe the dynamic strength of multiple biotin-streptavidin adhesion bonds under linear loading using the biomembrane force probe setup for dynamic force spectroscopy. Measured rupture force histograms are compared to results from a master equation model for the stochastic dynamics of bond rupture under load. This allows us to extract the distribution of the number of initially closed bonds. We also extract the molecular parameters of the adhesion bonds, in good agreement with earlier results from single bond experiments. Our analysis shows that the peaks in the measured histograms are not simple multiples of the single bond values, but follow from a superposition procedure which generates different peak positions.

T. Erdmann; S. Pierrat; P. Nassoy; U. S. Schwarz

2007-12-18T23:59:59.000Z

214

Private Activity Bond Allocation (Missouri) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Bond Allocation (Missouri) Bond Allocation (Missouri) Private Activity Bond Allocation (Missouri) < Back Eligibility Investor-Owned Utility Local Government Municipal/Public Utility Rural Electric Cooperative Systems Integrator Utility Savings Category Alternative Fuel Vehicles Hydrogen & Fuel Cells Buying & Making Electricity Water Home Weatherization Solar Wind Maximum Rebate Total Program Cap 2012: $571,015,360 Program Info State Missouri Program Type Bond Program Provider Missouri Department of Economic Development The Private Activity Bond Allocation Program provides low-interest financing through tax-exempt bonds for certain types of projects, including electric and gas utility projects. Eligible applicants include certain state agencies, cities, counties and industrial development authorities

215

Energy absorption in Ni-Mn-Ga/ polymer composites  

E-Print Network [OSTI]

In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

Feuchtwanger, Jorge

2006-01-01T23:59:59.000Z

216

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect (OSTI)

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

217

Interfacial characterization of nickelyttria-stabilized zirconia cermet anode/interconnect joints with AgPdGa active filler for use in solid-oxide fuel cells  

Science Journals Connector (OSTI)

Abstract Nickelyttria-stabilized zirconia cermet anode (NiYSZ)/interconnect joints with silverpalladiumgallium (Ag9Pd9Ga) active fillers are prepared by vacuum brazing. The joint structure and microstructure are analyzed by X-ray diffraction (XRD) and scanning electron microscopy coupled with energy dispersive spectroscopy (SEM/EDS), and by using an electron probe microanalyzer (EPMA). SEM observations of the joint show no cracks near the interface, confirming the compatibility of the Ag9Pd9Ga filler with a different anode and interconnect. The XRD pattern of the joint specimens oxidized at 800C for 250h shows Cr2O3 and (Mn,Cr)3O4 surface layers. EPMA analysis of the cell/Ag9Pd9Ga/alloys joint at the cross section shows Cr, O, Fe, Zr, Ni, Ag, Pd, Ga, Y, and Mn. Overall, the results indicate that the bonding between metal and cermet is well established and the interface is smooth. By correlating the XRD and EPMA analysis results, we also analyzed the possible stages during joint oxidation. The joint strength was evaluated at 25 and 800C under shear and tensile loading conditions, respectively, and the brazed Ag9Pd9Ga sealant compared favorably with the commercially available glass-ceramic GC-9 counterpart.

Chih-Long Chao; Chun-Lin Chu; Yiin-Kuen Fuh; Ray-Quen Hsu; Shyong Lee; Yung-Neng Cheng

2014-01-01T23:59:59.000Z

218

GA-AL-SC | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

219

Low Efficiency Droop Green Nano-Pyramid {10 -11} InGaN/GaN Multiple Quantum Well LED  

Science Journals Connector (OSTI)

We report a low efficiency droop 520 nm green nano-pyramid InGaN/GaN multiple quantum well (MQW) LED. MQWs were grown on the semipolar {10 1} nano-pyramid facets. The device physics...

Cheng, Yuh-Jen; Chang, Shih-Pang; Lin, Da-Wei; Kuo, Hao-chung; Xiong, Kang-lin

220

InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting  

Science Journals Connector (OSTI)

Hydrogen generation through water splitting by n-InGaN working electrodes with bias generated from GaAs solar cell was studied. Instead of using an external bias provided by power...

Liu, Shu-Yen; Sheu, J K; Lin, Yu-Chuan; Chen, Yu-Tong; Tu, S J; Lee, M L; Lai, W C

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Reaktive Molekularstrahlepitaxie und Charakterisierung von GaN/(Al,Ga)N-Heterostrukturen auf SiC(0001).  

E-Print Network [OSTI]

??Thema dieser Arbeit ist die Synthese von hexagonalen GaN/(Al,Ga)N-Heterostrukturen mittels reaktiver Molekularstrahlepitaxie (MBE) auf SiC(0001)-Substraten. Der Einflu der Wachstumsbedingungen auf die strukturellen, morphologischen, optischen und (more)

Thamm, Andreas

2001-01-01T23:59:59.000Z

222

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect (OSTI)

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

223

Local Government Revenue Bonds (Montana) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Government Revenue Bonds (Montana) Government Revenue Bonds (Montana) Local Government Revenue Bonds (Montana) < Back Eligibility Utility Commercial Investor-Owned Utility Municipal/Public Utility Local Government Rural Electric Cooperative Tribal Government Savings Category Alternative Fuel Vehicles Hydrogen & Fuel Cells Buying & Making Electricity Water Home Weatherization Solar Wind Program Info State Montana Program Type Bond Program Provider Any interested county or municipality. Limited obligation local government bonds ("special revenue bonds") may be issued for qualified electric energy generation facilities, including those powered by renewables. These bonds generally are secured by the project itself. The taxing power or general credit of the government may not be used to secure the bonds. Local governments may not operate any project

224

Major Business Expansion Bond Program (Maine) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Expansion Bond Program (Maine) Expansion Bond Program (Maine) Major Business Expansion Bond Program (Maine) < Back Eligibility Commercial Savings Category Alternative Fuel Vehicles Hydrogen & Fuel Cells Buying & Making Electricity Water Home Weatherization Solar Wind Program Info State Maine Program Type Bond Program Provider Finance Authority of Maine The Major Business Expansion Bond Program provides long-term, credit-enhanced financing up to $25,000,000 at taxable bond rates for businesses creating or retaining at least 50 jobs; up to $10,000,000 is available for businesses which expand their manufacturing services. The bond proceeds may be used to acquire real estate, machinery, equipment, or rehabilitate or expand an existing facility. The interest rate is determined by market forces at the time of the bond sale

225

Imaging Intrinsic Diffusion of Bridge-Bonded Oxygen Vacancies...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Intrinsic Diffusion of Bridge-Bonded Oxygen Vacancies on TiO2(110). Imaging Intrinsic Diffusion of Bridge-Bonded Oxygen Vacancies on TiO2(110). Abstract: Since oxygen atom...

226

Ge-Au eutectic bonding of Ge {100} single crystals  

Science Journals Connector (OSTI)

We present preliminary results on the eutectic bonding between two {100} Ge single crystal surfaces using thin films of ... Au sample show epitaxial growth of Ge. In sections of the bond, lattice continuity...

W. B. Knowlton; K. M. Itoh; J. W. Beeman; J. H. Emes

1993-11-01T23:59:59.000Z

227

Pooled Bond Program (South Dakota) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Pooled Bond Program (South Dakota) Pooled Bond Program (South Dakota) Pooled Bond Program (South Dakota) < Back Eligibility Commercial Savings Category Alternative Fuel Vehicles Hydrogen & Fuel Cells Buying & Making Electricity Water Home Weatherization Solar Wind Program Info State South Dakota Program Type Bond Program Provider South Dakota Governor's Office of Economic Development The Pooled Bond Program offered by the Economic Development Finance Authority is designed for capital intensive projects, providing small businesses access to larger capital markets for tax-exempt or taxable bond issuances. Bond proceeds can be used to finance 80 percent of new construction, and 75 percent of new equipment costs, with no greater than 25 percent of the bond proceeds being used for ancillary activities such as

228

Industrial Revenue Bond Issuance Cost Assistance (Wisconsin) | Department  

Broader source: Energy.gov (indexed) [DOE]

Revenue Bond Issuance Cost Assistance (Wisconsin) Revenue Bond Issuance Cost Assistance (Wisconsin) Industrial Revenue Bond Issuance Cost Assistance (Wisconsin) < Back Eligibility Local Government Savings Category Alternative Fuel Vehicles Hydrogen & Fuel Cells Buying & Making Electricity Water Home Weatherization Wind Solar Program Info State Wisconsin Program Type Bond Program Provider Wisconsin Economic Development Corporation Industrial Revenue Bonds (IRB) are tax-exempt bonds that can be used to stimulate capital investment and job creation by providing private borrowers with access to financing at interest rates that are lower than conventional bank loans. The IRB process involves five separate entities - the borrower, lender, bond attorney, issuer, and WEDC. WEDC allocates the bonding authority or the volume cap for the program under Wis. Stat. §

229

Article coated with flash bonded superhydrophobic particles  

DOE Patents [OSTI]

A method of making article having a superhydrophobic surface includes: providing a solid body defining at least one surface; applying to the surface a plurality of diatomaceous earth particles and/or particles characterized by particle sizes ranging from at least 100 nm to about 10 .mu.m, the particles being further characterized by a plurality of nanopores, wherein at least some of the nanopores provide flow through porosity, the particles being further characterized by a plurality of spaced apart nanostructured features that include a contiguous, protrusive material; flash bonding the particles to the surface so that the particles are adherently bonded to the surface; and applying a hydrophobic coating layer to the surface and the particles so that the hydrophobic coating layer conforms to the nanostructured features.

Simpson, John T (Clinton, TN) [Clinton, TN; Blue, Craig A (Knoxville, TN) [Knoxville, TN; Kiggans, Jr., James O [Oak Ridge, TN

2010-07-13T23:59:59.000Z

230

Definition: Cement Bond Log | Open Energy Information  

Open Energy Info (EERE)

Definition Definition Edit with form History Facebook icon Twitter icon » Definition: Cement Bond Log Jump to: navigation, search Dictionary.png Cement Bond Log A representation of the integrity of the cement job, especially whether the cement is adhering solidly to the outside of the casing. The log is typically obtained from one of a variety of sonic-type tools. The newer versions, called cement evaluation logs, along with their processing software, can give detailed, 360-degree representations of the integrity of the cement job, whereas older versions may display a single line representing the integrated integrity around the casing.[1] Related Terms Acoustic Logs References ↑ Schlumberger Oilfield Glossary Ret LikeLike UnlikeLike You like this.Sign Up to see what your friends like.

231

A New Hydrogen Bond in Coal  

Science Journals Connector (OSTI)

During our study on hydrogen bond in coal by diffuse reflectance IR, we found that a weak peak at 2514 cm-1 always occurred for some coals. ... Infrared absorption spectra of coals and coal extracts ... The FTIR spectra during the heat-up of eight coals (seven Argonne premium coals and an Australian brown coal), an ion-exchange resin, and a lignin were measured every 20 C from room temp. ...

Dongtao Li; Wen Li; Baoqing Li

2003-04-30T23:59:59.000Z

232

Effects of Bond Stretching on Polymer Statistics  

Science Journals Connector (OSTI)

Effects of Bond Stretching on Polymer Statistics ... When a system becomes strained, longer chain end-to-end separations become more probable and the assumptions that go into the Gaussian chain model are no longer valid. ... The associated probability distribution attaches too much weight to the probabilities at larger end-to-end separations, and a statistical analysis based on this distribution would unrealistically overemphasize the contributions of these longer chains. ...

Gary G. Hoffman

1999-08-10T23:59:59.000Z

233

Bonding on the corrugator; The energy aspects  

SciTech Connect (OSTI)

This paper discusses what new features are needed on the corrugator of the future. The author analyzes trends in the industry of the last 15-20 years. The trends point to more automation and more process and quality control, but new designs will react to new market needs such as just-in-time production and product flexibility. In this paper, the author focuses on the bonding process.

Bradatsch, E. (BHS-Werk Weiherhammer, D-8481 Weiherhammer (DE))

1990-01-01T23:59:59.000Z

234

Cement Bond Log | Open Energy Information  

Open Energy Info (EERE)

Cement Bond Log Cement Bond Log Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Technique: Cement Bond Log Details Activities (0) Areas (0) Regions (0) NEPA(0) Exploration Technique Information Exploration Group: Downhole Techniques Exploration Sub Group: Well Log Techniques Parent Exploration Technique: Acoustic Logs Information Provided by Technique Lithology: Stratigraphic/Structural: Hydrological: Thermal: Cost Information Low-End Estimate (USD): 0.8585 centUSD 8.5e-4 kUSD 8.5e-7 MUSD 8.5e-10 TUSD / foot Median Estimate (USD): 1.25125 centUSD 0.00125 kUSD 1.25e-6 MUSD 1.25e-9 TUSD / foot High-End Estimate (USD): 3.00300 centUSD 0.003 kUSD 3.0e-6 MUSD 3.0e-9 TUSD / foot Time Required Low-End Estimate: 0.35 days9.582478e-4 years 8.4 hours 0.05 weeks 0.0115 months / job

235

Vacuum fusion bonding of glass plates  

DOE Patents [OSTI]

An improved apparatus and method for vacuum fusion bonding of large, patterned glass plates. One or both glass plates are patterned with etched features such as microstructure capillaries and a vacuum pumpout moat, with one plate having at least one hole therethrough for communication with a vacuum pumpout fixture. High accuracy alignment of the plates is accomplished by a temporary clamping fixture until the start of the fusion bonding heat cycle. A complete, void-free fusion bond of seamless, full-strength quality is obtained through the plates; because the glass is heated well into its softening point and because of a large, distributed force that is developed that presses the two plates together from the difference in pressure between the furnace ambient (high pressure) and the channeling and microstructures in the plates (low pressure) due to the vacuum drawn. The apparatus and method may be used to fabricate microcapillary arrays for chemical electrophoresis; for example, any apparatus using a network of microfluidic channels embedded between plates of glass or similar moderate melting point substrates with a gradual softening point curve, or for assembly of glass-based substrates onto larger substrates, such as in flat panel display systems.

Swierkowski, Steve P. (Livermore, CA); Davidson, James C. (Livermore, CA); Balch, Joseph W. (Livermore, CA)

2001-01-01T23:59:59.000Z

236

Vacuum fusion bonding of glass plates  

DOE Patents [OSTI]

An improved apparatus and method for vacuum fusion bonding of large, patterned glass plates. One or both glass plates are patterned with etched features such as microstructure capillaries and a vacuum pumpout moat, with one plate having at least one hole therethrough for communication with a vacuum pumpout fixture. High accuracy alignment of the plates is accomplished by a temporary clamping fixture until the start of the fusion bonding heat cycle. A complete, void-free fusion bond of seamless, full-strength quality is obtained through the plates; because the glass is heated well into its softening point and because of a large, distributed force that is developed that presses the two plates together from the difference in pressure between the furnace ambient (high pressure) and the channeling and microstructures in the plates (low pressure) due to the vacuum drawn. The apparatus and method may be used to fabricate microcapillary arrays for chemical electrophoresis; for example, any apparatus using a network of microfluidic channels embedded between plates of glass or similar moderate melting point substrates with a gradual softening point curve, or for assembly of glass-based substrates onto larger substrates, such as in flat panel display systems.

Swierkowski, Steve P. (Livermore, CA); Davidson, James C. (Livermore, CA); Balch, Joseph W. (Livermore, CA)

2000-01-01T23:59:59.000Z

237

Hydrogen Bonding Penalty upon Ligand Binding Hongtao Zhao, Danzhi Huang*  

E-Print Network [OSTI]

Hydrogen Bonding Penalty upon Ligand Binding Hongtao Zhao, Danzhi Huang* Department of Biochemistry, University of Zurich, Zurich, Switzerland Abstract Ligand binding involves breakage of hydrogen bonds with water molecules and formation of new hydrogen bonds between protein and ligand. In this work, the change

Caflisch, Amedeo

238

Analysis of C H...O hydrogen bonds  

E-Print Network [OSTI]

1 Analysis of C H...O hydrogen bonds in high resolution protein crystal structures from the PDB 1.4 Identification of C-H...O hydrogen bonds............................................. 1.4.1 The definition of a C-H...O hydrogen bond.................................... 1.4.2 Fixing the hydrogen and measuring the parameters

Babu, M. Madan

239

Oil prices and government bond risk premiums Herv Alexandre*  

E-Print Network [OSTI]

Oil prices and government bond risk premiums By Hervé Alexandre*º Antonin de Benoist * Abstract : This article analyses the impact of oil price on bond risk premiums issued by emerging economies. No empirical study has yet focussed on the effects of the oil price on government bond risk premiums. We develop

Boyer, Edmond

240

Growth and characterization of M-plane GaN and (In,Ga)N/GaN multiple quantum wells.  

E-Print Network [OSTI]

??Thema dieser Arbeit ist die Synthese von Wurtzit M-plane (In,Ga)N(1-100)-Heterostrukturen auf g-LiAlO2(100) mittels plasmauntersttzter Molekularstrahlepitaxie (MBE). Der Einflu der Wachstumsbedingungen auf die strukturellen, morphologischen, und (more)

Sun, Yue-Jun

2004-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Development of Polarized Electron Source of GaAs-AlGaAs Superlattice and Strained GaAs  

Science Journals Connector (OSTI)

At Nagoya University, we have continued the development of GaAs polarized electron source (PES) for several years. Our test ... a gun producing (15) KeV polarized electrons and a standard 100 KeV Mott polarimete...

T. Nakanishi; S. Nakamura

1991-01-01T23:59:59.000Z

242

Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures  

SciTech Connect (OSTI)

Using a combination of experimental and theoretical techniques we present the dependence of the bandgap E{sub g} and the spin orbit splitting energy ?{sub so}, with Bi concentration in GaAsBi/GaAs samples. We find that the concentration at which ?{sub so},> E{sub g} occurs at 9%. Both spectroscopic as well as first device results indicate a type I alignment.

Hild, K.; Batool, Z.; Jin, S. R.; Hossain, N.; Marko, I. P.; Sweeney, S. J. [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Hosea, T. JC. [1 Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, UK and also, Ibnu Sina Institute, Universiti Teknologi Malaysia, Johor Bahru, 81310 (Malaysia); Lu, X. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6, Canada and now VarianSemiconductor Equipment Associates, Gloucester, MA 01930 (United States); Tiedje, T. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6 (Canada)

2013-12-04T23:59:59.000Z

243

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

244

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect (OSTI)

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

245

Hydrogen Bond Breaking and Reformation in Alcohol Oligomers Following Vibrational Relaxation of a Non-Hydrogen-Bond Donating Hydroxyl Stretch  

E-Print Network [OSTI]

Hydrogen Bond Breaking and Reformation in Alcohol Oligomers Following Vibrational Relaxation of a Non-Hydrogen-Bond Donating Hydroxyl Stretch K. J. Gaffney, I. R. Piletic, and M. D. Fayer* Department measured with ultrafast infrared pump-probe experiments. Non-hydrogen-bond donating OD stretches (2690 cm-1

Fayer, Michael D.

246

Synchrotron radiation photoemission study of interfacial electronic structure of HfO{sub 2} on In{sub 0.53}Ga{sub 0.47}As(001)-4??2 from atomic layer deposition  

SciTech Connect (OSTI)

The growth of a passivating layer on a In{sub 0.53}Ga{sub 0.47}As(001)-4??2 surface by atomic-layer deposition of tetrakis[ethylmethylamino]Hafnium (TEMAHf)) followed by the water pulse was investigated by synchrotron radiation photoemission. The Hf atoms maintain four-fold coordination, both after the initial TEMAHf deposition and the subsequent water pulse. The Hf atoms initially bond to the As dangling bonds of the surface As atom located on the edges of the raised ridges. One EMA ligand is removed in this process. Subsequent water exposure substitutes OH ligand for one or more remaining EMA ligands. These in turn react with TEMAHf to form Hf-O-Hf bonds allowing the hafnium oxides to grow. The surface In atoms on the terrace of the raised ridges were partially removed, but none bonded of the precursor atoms. Correlations between the interfacial electronic structure and the electric performance are discussed.

Pi, T. W., E-mail: pi@nsrrc.org.tw, E-mail: gkwer@verizon.net, E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China); Lin, T. D.; Chang, Y. C.; Hong, M., E-mail: pi@nsrrc.org.tw, E-mail: gkwer@verizon.net, E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Lin, H. Y.; Kwo, J., E-mail: pi@nsrrc.org.tw, E-mail: gkwer@verizon.net, E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Wertheim, G. K., E-mail: pi@nsrrc.org.tw, E-mail: gkwer@verizon.net, E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Woodland Consulting, 175 Woodland Ave., Morristown, New Jersey 07960 (United States)

2014-01-27T23:59:59.000Z

247

Multiband GaNAsP Quaternary Alloys  

SciTech Connect (OSTI)

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

2005-12-08T23:59:59.000Z

248

Implantation of carbon in GaAs  

SciTech Connect (OSTI)

Carbon implanted into GaAs and thermally annealed typically exhibits very low (<3%) electrical activity. It has been demonstrated that the electrical activity of C can be significantly enhanced by co-implantation with Ga. Improved activation may result from either additional damage of the crystal lattice or from stoichiometric changes, forcing the C atoms onto As sites. To determine the relative importance of each of these effects, I have undertaken a systematic study of carbon activation in GaAs. A range of co-implants have been used: group III (B, Ga), group V (N, P, As) and noble gases (Ar, Kr). The damage introduced to the substrate will depend on the mass of the ion implanted. The group III and group V co-implants will affect the crystal stoichiometry. The results indicate that both lattice damage and crystal stoichiometry are important for high electrical activity of C. Increasing the damage will increase the activation due to the increased number of As vacancies but maximum activation can be obtained only by a co-implant which not only damages the lattice but also forces the C to occupy an As site.

Moll, A.J.

1992-03-01T23:59:59.000Z

249

O?[]O? nuclear ?-decay of ?Ga  

E-Print Network [OSTI]

The branching ratio for the ?-Decay of ?Ga to the first excited O? state in ?Zn has been measured. It is possible to use this branching ratio to test the theoretical method of calculating the [] component of the charge correction term [], which...

Hyman, Bruce Carl

2012-06-07T23:59:59.000Z

250

Tax-Exempt Bond Financing (Delaware) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Bond Financing (Delaware) Bond Financing (Delaware) Tax-Exempt Bond Financing (Delaware) < Back Eligibility Utility Commercial Agricultural Investor-Owned Utility State/Provincial Govt Industrial Construction Municipal/Public Utility Local Government Installer/Contractor Rural Electric Cooperative Tribal Government Retail Supplier Systems Integrator Fuel Distributor Transportation Savings Category Alternative Fuel Vehicles Hydrogen & Fuel Cells Buying & Making Electricity Water Home Weatherization Solar Wind Program Info State Delaware Program Type Bond Program Provider Delaware Economic Development Office The Delaware Economic Development Authority provides tax-exempt bond financing for financial assistance to new or expanding businesses, governmental units and certain organizations that are exempt from federal

251

Bond and Loan Program (Arkansas) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Bond and Loan Program (Arkansas) Bond and Loan Program (Arkansas) Bond and Loan Program (Arkansas) < Back Eligibility Agricultural Commercial Construction Fed. Government Fuel Distributor General Public/Consumer Industrial Installer/Contractor Institutional Investor-Owned Utility Local Government Low-Income Residential Multi-Family Residential Municipal/Public Utility Nonprofit Residential Retail Supplier Rural Electric Cooperative Schools State/Provincial Govt Systems Integrator Transportation Tribal Government Utility Savings Category Alternative Fuel Vehicles Hydrogen & Fuel Cells Buying & Making Electricity Water Home Weatherization Solar Program Info State Arkansas Program Type Bond Program Loan Program Provider Department of Finance and Administration The Bond and Loan programs of Arkansas are four programs designed to

252

Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction  

SciTech Connect (OSTI)

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16 from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

2014-03-17T23:59:59.000Z

253

Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells  

SciTech Connect (OSTI)

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R. [Institut Interdisciplinaire d'Innovation Technologique (3IT), Universit de Sherbrooke, Sherbrooke, Qubec (Canada)] [Institut Interdisciplinaire d'Innovation Technologique (3IT), Universit de Sherbrooke, Sherbrooke, Qubec (Canada); Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K. [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada)] [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Fafard, S. [Cyrium Technologies Inc., Ottawa, ON (Canada)] [Cyrium Technologies Inc., Ottawa, ON (Canada)

2013-09-27T23:59:59.000Z

254

Economic Development Bond Program (Iowa) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Bond Program (Iowa) Bond Program (Iowa) Economic Development Bond Program (Iowa) < Back Eligibility Agricultural Commercial Industrial Institutional Investor-Owned Utility Low-Income Residential Multi-Family Residential Municipal/Public Utility Nonprofit Rural Electric Cooperative Schools Utility Savings Category Alternative Fuel Vehicles Hydrogen & Fuel Cells Buying & Making Electricity Water Home Weatherization Solar Wind Program Info Funding Source Iowa Finance Authority State Iowa Program Type Bond Program Provider Iowa Finance Authority Through its Economic Development Bond Program, the Iowa Finance Authority (IFA) issues tax-exempt bonds on behalf of private entities or organizations for eligible purposes. The responsibility for repayment of the bonds rests with the applicant. Neither IFA nor the State of Iowa has

255

Single-Issue Industrial Revenue Bond Program (Missouri) | Department of  

Broader source: Energy.gov (indexed) [DOE]

Single-Issue Industrial Revenue Bond Program (Missouri) Single-Issue Industrial Revenue Bond Program (Missouri) Single-Issue Industrial Revenue Bond Program (Missouri) < Back Eligibility Commercial Construction Industrial Retail Supplier Systems Integrator Utility Savings Category Alternative Fuel Vehicles Hydrogen & Fuel Cells Buying & Making Electricity Water Home Weatherization Solar Program Info State Missouri Program Type Bond Program Provider Missouri Development Finance Board The Missouri Development Finance Board administers a Single-Issue Tax-Exempt Industrial Revenue Bond Program as well as a Taxable Industrial Revenue Bond Program. The Tax-Exempt Program finances (i) the acquisition, construction and equipping of qualified manufacturing production facilities and/or equipment, and (ii) refinances outstanding tax-exempt bonds. It

256

Qualified Energy Conservation Bonds (Ohio) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Qualified Energy Conservation Bonds (Ohio) Qualified Energy Conservation Bonds (Ohio) Qualified Energy Conservation Bonds (Ohio) < Back Eligibility Agricultural Institutional Local Government Municipal/Public Utility Rural Electric Cooperative Schools Savings Category Buying & Making Electricity Water Home Weatherization Solar Wind Program Info State Ohio Program Type Bond Program Provider Ohio Air Quality Development Authority The Ohio Air Quality Development Authority (OAQDA) administers the Qualified Energy Conservation Bonds (QECB) program in Ohio. QECBs have been used by local governments and public universities to finance the installation of energy conserving equipment in publicly owned buildings. Under a QECB financing package, OAQDA authorizes Air Quality Development Bonds for issuance as a Series A federally tax-exempt bond and a Series B

257

Dual-bonded catalyst layer structure cathode for PEMFC  

Science Journals Connector (OSTI)

Novel electrode structure based on dual-bonded catalyst layer structure is reported to elevate proton exchange membrane fuel cell (PEMFC) cathode performance. Differing from conventional cathode with simplex PTFE or ionomer as binder material in catalyst layer (CL), dual-bonded CL combines those two types of binders, respectively, in a composite structure. In order to develop a cathode possessing the superior merits of both mass transport and proton transfer, a PTFE-rich CL and an ionomer-rich CL were fabricated on gas diffusion layer in proper order. Polarization characteristic of cathodes with dual-bonded CL, conventional PTFE-bonded CL and ionomer-bonded CL were evaluated at ambient pressure in oxygen/air. Better performance of cathode was achieved with dual-bonded, compared with conventional structures. Electric yield rate of dual-bonded cathode was about 50%, whilst that of conventional cathodes was about 40%.

Xuewei Zhang; Pengfei Shi

2006-01-01T23:59:59.000Z

258

Method for bonding a transmission line to a downhole tool  

DOE Patents [OSTI]

An apparatus for bonding a transmission line to the central bore of a downhole tool includes a pre-formed interface for bonding a transmission line to the inside diameter of a downhole tool. The pre-formed interface includes a first surface that substantially conforms to the outside contour of a transmission line and a second surface that substantially conforms to the inside diameter of a downhole tool. In another aspect of the invention, a method for bonding a transmission line to the inside diameter of a downhole tool includes positioning a transmission line near the inside wall of a downhole tool and placing a mold near the transmission line and the inside wall. The method further includes injecting a bonding material into the mold and curing the bonding material such that the bonding material bonds the transmission line to the inside wall.

Hall, David R. (Provo, UT); Fox, Joe (Spanish Fork, UT)

2007-11-06T23:59:59.000Z

259

Ultrasonic evaluation of beryllium-copper diffusion bonds  

SciTech Connect (OSTI)

A study was performed to compare the effectiveness of several advanced ultrasonic techniques when used to determine the strength of diffusion bonded beryllium-copper, which heretofore have each been applied to only a few material systems. The use of integrated backscatter calculations, frequency domain reflection coefficients, and time-of-flight variance was compared in their ability to characterize the bond strength in a series of beryllium-copper diffusion bond samples having a wide variation in bond quality. Correlation of integrated backscatter calculations and time-of-flight variance with bond strength was good. Some correlation of the slope of the frequency based reflection coefficient was shown for medium and high strength bonds, while its Y-intercept showed moderate correlation for all bond strengths.

Jamieson, E.E.

2000-06-08T23:59:59.000Z

260

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors  

SciTech Connect (OSTI)

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

Yang, Jie, E-mail: jie.yang@yale.edu; Cui, Sharon; Ma, T. P. [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)] [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)] [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

2013-11-25T23:59:59.000Z

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Bond energy effects on strength, cooperativity and robustness of molecular structures  

Science Journals Connector (OSTI)

...robustness at smaller bond energy lower strength at smaller bond energy bond spacing L 0 higher...biology of the cell. New York, NY: Taylor Francis...Cracks and fracture. New York, NY: Academic Press. Bond energy effects on strength...

2011-01-01T23:59:59.000Z

262

Le travail comme capacit : de la subordination la libert ?1 Sen met au centre de sa conception du dveloppement, l'institution d'un "libre march de l'emploi", par  

E-Print Network [OSTI]

capacité repose en premier lieu, dans l'analyse d'Amartya Sen, sur la liberté réelle de choix en se1 Le travail comme « capacité » : de la subordination à la liberté ?1 Résumé : Sen met au centre de conception du « libre marché de l'emploi » dans la réflexion de Sen, à partir de sa conception du

Paris-Sud XI, Université de

263

Bond selective chemistry beyond the adiabatic approximation  

SciTech Connect (OSTI)

One of the most important challenges in chemistry is to develop predictive ability for the branching between energetically allowed chemical reaction pathways. Such predictive capability, coupled with a fundamental understanding of the important molecular interactions, is essential to the development and utilization of new fuels and the design of efficient combustion processes. Existing transition state and exact quantum theories successfully predict the branching between available product channels for systems in which each reaction coordinate can be adequately described by different paths along a single adiabatic potential energy surface. In particular, unimolecular dissociation following thermal, infrared multiphoton, or overtone excitation in the ground state yields a branching between energetically allowed product channels which can be successfully predicted by the application of statistical theories, i.e. the weakest bond breaks. (The predictions are particularly good for competing reactions in which when there is no saddle point along the reaction coordinates, as in simple bond fission reactions.) The predicted lack of bond selectivity results from the assumption of rapid internal vibrational energy redistribution and the implicit use of a single adiabatic Born-Oppenheimer potential energy surface for the reaction. However, the adiabatic approximation is not valid for the reaction of a wide variety of energetic materials and organic fuels; coupling between the electronic states of the reacting species play a a key role in determining the selectivity of the chemical reactions induced. The work described below investigated the central role played by coupling between electronic states in polyatomic molecules in determining the selective branching between energetically allowed fragmentation pathways in two key systems.

Butler, L.J. [Univ. of Chicago, IL (United States)

1993-12-01T23:59:59.000Z

264

Repairable chip bonding/interconnect process  

DOE Patents [OSTI]

A repairable, chip-to-board interconnect process which addresses cost and testability issues in the multi-chip modules. This process can be carried out using a chip-on-sacrificial-substrate technique, involving laser processing. This process avoids the curing/solvent evolution problems encountered in prior approaches, as well is resolving prior plating problems and the requirements for fillets. For repairable high speed chip-to-board connection, transmission lines can be formed on the sides of the chip from chip bond pads, ending in a gull wing at the bottom of the chip for subsequent solder.

Bernhardt, Anthony F. (Berkeley, CA); Contolini, Robert J. (Livermore, CA); Malba, Vincent (Livermore, CA); Riddle, Robert A. (Tracy, CA)

1997-01-01T23:59:59.000Z

265

Infrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a  

E-Print Network [OSTI]

GaP single QW surrounded by AlGaInP waveguide WG and cladding layers, whereas the NIR laser incorporates a GaInfrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a Robert in GaAs-based broad-area laser diodes. Spectrally and spatially resolved scanning optical microscopy

Peinke, Joachim

266

GaN-based micro-LED arrays on flexible substrates for optical cochlear implants  

Science Journals Connector (OSTI)

Currently available cochlear implants are based on electrical stimulation of the spiral ganglion neurons. Optical stimulation with arrays of micro-sized light-emitting diodes (LEDs) promises to increase the number of distinguishable frequencies. Here, the development of a flexible GaN-based micro-LED array as an optical cochlear implant is reported for application in a mouse model. The fabrication of 15m thin and highly flexible devices is enabled by a laser-based layer transfer process of the GaN-LEDs from sapphire to a polyimide-on-silicon carrier wafer. The fabricated 50?50m2 LEDs are contacted via conducting paths on both p- and n-sides of the LEDs. Up to three separate channels could be addressed. The probes, composed of a linear array of the said LEDs bonded to the flexible polyimide substrate, are peeled off the carrier wafer and attached to flexible printed circuit boards. Probes with four LEDs and a width of 230m are successfully implanted in the mouse cochlea both in vitro and in vivo. The LEDs emit 60W at 1mA after peel-off, corresponding to a radiant emittance of 6mWmm?2.

Christian Goler; Colin Bierbrauer; Rdiger Moser; Michael Kunzer; Katarzyna Holc; Wilfried Pletschen; Klaus Khler; Joachim Wagner; Michael Schwaerzle; Patrick Ruther; Oliver Paul; Jakob Neef; Daniel Keppeler; Gerhard Hoch; Tobias Moser; Ulrich T Schwarz

2014-01-01T23:59:59.000Z

267

Nuclear Magnetic Resonance Inverse Spectra of InGaAs Quantum Dots: Atomistic Level Structural Information  

E-Print Network [OSTI]

A wealth of atomistic information is buried within a self-assembled quantum dot (QD), carrying the legacy of its chemical composition and the growth history. In the presence of quadrupolar nuclei, as in InGaAs QDs, much of this is inherited to nuclear spins. With this computational study, we identify what sorts of atomistic information can be tapped from a single InGaAs QD, as probed optically by the recently introduced highly sensitive inverse spectra nuclear magnetic resonance technique. To capture the fingerprints of alloying in the spectra, we compare In0.2Ga0.8As QD with the compound InAs QD of the same shape, as well as performing a search over the parameter space of the inverse spectra technique. We display how both the elemental nuclear properties and local bonding take roles. The arsenic nuclei with their small gyromagnetic ratio are the most vulnerable to strain at a given magnetic field. Furthermore, because of their large S44 gradient elastic tensor components, the deviation of the major electric field gradient axis from the static magnetic field is also the largest. Moreover, this axial tilting has a big variance caused by the availability of various arsenic-centric nearest-neighbor configurations under cation alloying. We identify that a signature of alloying as opposed to segregated binaries within the QD is a peak that appears like an additional satellite transition of 75As. The local chemical and strain environment distinctly affect the isotopic line profiles, in particular the central transitions, for which we provide an in-depth analysis. We demonstrate the possibility of restoring to a large extend a monoenergetic distribution of isotopic nuclear spins by simply tilting the sample within a range of angles with respect to static magnetic field.

Ceyhun Bulutay; E. A. Chekhovich; A. I. Tartakovskii

2014-08-02T23:59:59.000Z

268

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell  

SciTech Connect (OSTI)

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-01-01T23:59:59.000Z

269

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network [OSTI]

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

270

Monolithic integration of GaAs and h~~~~Ga~.~Aslasers by molecular epitaxy on GaAs  

E-Print Network [OSTI]

where the thick cladding layer below the active laser region acts as a buffer layer to-yield comparable epitaxial regrowth of Ino.aGaesAs lasers through dielectric masks between GaAs laser stripes on a GaAs substrate has been used for the -first time- to monolithically integrate these two lasers emitting near 1

271

Kohlenstoffhaltige ternre Verbindungen (V-Ge-C, Nb-Ga-C, Ta-Ga-C, Ta-Ge-C, Cr-Ga-C und Cr-Ge-C)  

Science Journals Connector (OSTI)

Die ternren Phasen V2GeC, Cr2GaC und Cr2GeC werden aus den Komponenten hergestellt und als H-Phasen identifiziert. Ferner drften auch die H-Phasen Ti2GaC, und Ti2GeC existieren. In gleicher Weise hergestellte L...

W. Jeitschko; H. Nowotny; F. Benesovsky

1963-01-01T23:59:59.000Z

272

The Ohio Enterprise Bond Fund (Ohio) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Bond Fund (Ohio) Bond Fund (Ohio) The Ohio Enterprise Bond Fund (Ohio) < Back Eligibility Commercial State/Provincial Govt Industrial Local Government Nonprofit Savings Category Alternative Fuel Vehicles Hydrogen & Fuel Cells Buying & Making Electricity Water Home Weatherization Solar Wind Maximum Rebate $10 million Program Info Funding Source Ohio Treasurer of State Start Date 1988 State Ohio Program Type Bond Program The Ohio Enterprise Bond Fund (OEBF) was created in 1988 to promote economic development, create and retain quality jobs and assist governmental operations. The program enables non-profit and for-profit borrowers to access the national capital markets through bonds issued through OEBF. The program is administered by the Ohio Department of Development and financing is provided by the Ohio Treasurer of State.

273

A Surprising Path for Proton Transfer Without Hydrogen Bonds  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A Surprising Path for Proton Transfer Without Hydrogen Bonds Print A Surprising Path for Proton Transfer Without Hydrogen Bonds Print Hydrogen bonds are found everywhere in chemistry and biology and are critical in DNA and RNA. A hydrogen bond results from the attractive dipolar interaction of a chemical group containing a hydrogen atom with a group containing an electronegative atom, such as nitrogen, oxygen, or fluorine, in the same or a different molecule. Conventional wisdom has it that proton transfer from one molecule to another can only happen via hydrogen bonds. Recently, a team of Berkeley Lab and University of Southern California researchers, using the ALS, discovered to their surprise that in some cases, protons can find ways to transfer even when hydrogen bonds are blocked. Sometimes You Have to

274

Ultrasonic NDT of titanium diffusion bonding with guided waves  

SciTech Connect (OSTI)

An ultrasonic guided wave technique is developed for the NDT of diffusion bonded titanium-to-titanium structures. A three-layer model based on the normal beam experimental results has been proposed. Dispersion curves and wave structure are analyzed to direct the experimental study. Two features related to Lamb waves propagating in diffusion bonded titanium plates, the spectral peak to peak ratios and the wave mode frequency shift, are extracted from the guided wave experimental results for both 2 mm (0.08 in.) and 4 mm (0.16 in.) diffusion bond panels. It is found for some specific modes and frequencies that these two features are sensitive to the diffusion bonding states and, therefore, could be used to distinguish good bond panels from poor bond ones.

Rose, J.L.; Zhu, W. [Pennsylvania State Univ., University Park, PA (United States). Dept. of Engineering Science and Mechanics; Zaidi, M. [Boeing Co., Long Beach, CA (United States)

1998-04-01T23:59:59.000Z

275

A Surprising Path for Proton Transfer Without Hydrogen Bonds  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A Surprising Path for Proton Transfer Without Hydrogen Bonds Print A Surprising Path for Proton Transfer Without Hydrogen Bonds Print Hydrogen bonds are found everywhere in chemistry and biology and are critical in DNA and RNA. A hydrogen bond results from the attractive dipolar interaction of a chemical group containing a hydrogen atom with a group containing an electronegative atom, such as nitrogen, oxygen, or fluorine, in the same or a different molecule. Conventional wisdom has it that proton transfer from one molecule to another can only happen via hydrogen bonds. Recently, a team of Berkeley Lab and University of Southern California researchers, using the ALS, discovered to their surprise that in some cases, protons can find ways to transfer even when hydrogen bonds are blocked. Sometimes You Have to

276

Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes[Multiple Quantum Wells  

SciTech Connect (OSTI)

AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

Hansen, M.; Abare, A.C.; Kozodoy, P.; Katona, T.M.; Craven, M.D.; Speck, J.S.; Mishra, U.K.; Coldren, L.A.; DenBaars, S.P.

2000-07-01T23:59:59.000Z

277

Bond formation at the Ni/ZrO2 interface  

Science Journals Connector (OSTI)

We report on the formation of strong chemical bonds at the Ni(100)/cubic-ZrO2(100) polar interfaces. Ab initio density functional theory calculations demonstrate that both Zr/Ni and O/Ni junctions are energetically stable, and predict that two different interactions determine the interface adhesion. Our results reveal that O-Ni ionic bonds are formed by Ni electron donation, while the Zr-Ni bonds show a mixed character with ionic and electron hybridization contributions.

J. I. Beltrn; S. Gallego; J. Cerd; J. S. Moya; M. C. Muoz

2003-08-07T23:59:59.000Z

278

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

279

Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures  

SciTech Connect (OSTI)

The influence of cladding doping level on the characteristics of laser diodes, which are based on an AlGaInP/GaInP/GaAs system and emit at wavelengths of 670-680 nm, is studied. It is shown experimentally that, as the ratio of the cladding doping levels P/N increases, the inversion current density J{sub 0} and the differential gain {beta} also increase. A monotonic increase in the characteristic temperature T{sub 0} accompanies this process. The internal quantum yield {eta}{sub 0} of stimulated recombination has a maximum at P/N=2.1. Laser diodes with a mesastripe width of 100 {mu}m are manufactured. The cw radiation power emitted by them is as high as 1000 mW at an efficiency of 1.55 W A{sup -1}. (active media. lasers)

Chel'nyi, A A; Aluev, A V; Maslov, S V [M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)

2004-01-31T23:59:59.000Z

280

Graphene in ohmic contact for both n-GaN and p-GaN  

SciTech Connect (OSTI)

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26T23:59:59.000Z

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Efficiency enhancement of InGaN/GaN solar cells with nanostructures  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

2014-02-03T23:59:59.000Z

282

Torsion Testing of Diffusion Bonded LIGA Formed Nickel  

SciTech Connect (OSTI)

A test technique has been devised which is suitable for the testing of the bond strength of batch diffusion bonded LIGA or DXRL defined structures. The method uses a torsion tester constructed with the aid of LIGA fabrication and distributed torsion specimens which also make use of the high aspect ratio nature of DXRL based processing. Measurements reveal achieved bond strengths of 130MPa between electroplated nickel with a bond temperature of 450 C at 7 ksi pressure which is a sufficiently low temperature to avoid mechanical strength degradation.

Buchheit, T.E.; Christenson, T.R.; Schmale, D.T.

1999-01-27T23:59:59.000Z

283

Shear strength of composite bonded to laser-pretreated dentin  

SciTech Connect (OSTI)

As research progresses, laser energy moves closer to acceptable usefulness. Laser application to prepare dentin creates a more retentive surface for composite bonding.

Cooper, L.F.; Myers, M.L.; Nelson, D.G.; Mowery, A.S.

1988-07-01T23:59:59.000Z

284

Intramolecular hydrogen bonding as a synthetic tool to induce...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Intramolecular hydrogen bonding as a synthetic tool to induce chemical selectivity in acid catalyzed porphyrin synthesis Authors: Megiatto, J. D., Patterson, D., Sherman, B. D.,...

285

Low-Cost Direct Bonded Aluminum (DBA) Substrates | Department...  

Energy Savers [EERE]

(DBA) Substrates Low-Cost Direct Bonded Aluminum (DBA) Substrates 2012 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation...

286

Low-Cost Direct Bonded Aluminum (DBA) Substrates | Department...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Aluminum (DBA) Substrates Low-Cost Direct Bonded Aluminum (DBA) Substrates 2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program Annual Merit Review and...

287

ORNL: Low-Cost Direct Bonded Aluminum (DBA) Substrates (Agreement...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Direct Bonded Aluminum (DBA) Substrates (Agreement ID:23278) 2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer...

288

ORNL: Low-Cost Direct Bonded Aluminum (DBA) Substrates (Agreement...  

Broader source: Energy.gov (indexed) [DOE]

Low-Cost Direct Bonded Aluminum (DBA) Substrates H. -T. Lin, A. A. Wereszczak, and S. Waters Oak Ridge National Laboratory This presentation does not contain any proprietary,...

289

Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN  

Science Journals Connector (OSTI)

Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN...

Yu, Chun-Ta; Lai, Wei-Chih; Yen, Cheng-Hsiung; Hsu, Hsu-Cheng; Chang, Shoou-Jinn

2014-01-01T23:59:59.000Z

290

In: Proceedings of the 1995 International environmental conference; 1995 May 7-10; Atlanta, GA. Atlanta, GA: TAPPI PRESS: 445-448; 1995.  

E-Print Network [OSTI]

. Atlanta, GA: TAPPI PRESS: 445-448; 1995. ENVIRONMENTALLY SOUND ALTERNATIVES FOR UPGRADING MIXED OFFICE

Abubakr, Said

291

Digital Bond Fact Sheet.cdr  

Broader source: Energy.gov (indexed) [DOE]

cost-shared effort between industry and cost-shared effort between industry and Cyber Security Audit and Attack Detection Toolkit Cyber Security Audit and Attack Detection Toolkit Bandolier Audit Files for optimizing security configurations and the Portaledge event detection capability for energy control systems Bandolier Audit Files for optimizing security configurations and the Portaledge event detection capability for energy control systems Cyber Security for Energy Delivery Systems Electricity Delivery & Energy Reliability Project Lead: Digital Bond Partners: OSIsoft Tenable Network Security PacifiCorp Tennessee Valley Authority Other Participating Vendors: ABB AREVA Emerson Matrikon SNC Telvent Bandolier and Portaledge The Concept Bandolier-The Approach By building configuration audit and attack detection capabilities into tools already

292

Surface Science Analysis of GaAs Photocathodes Following Sustained...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, strained super-lattice GaAs photocathode samples, removed from the CEBAF...

293

P-type doping of GaN  

SciTech Connect (OSTI)

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

Wong, R.K.

2000-04-10T23:59:59.000Z

294

Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance  

Science Journals Connector (OSTI)

A contacted electroreflectance technique was used to investigate AlGaN/GaN heterostructures and their intrinsic electric field-induced properties. By studying variations in the electroreflectance with applied field spectral features associated with the AlGaN barrier the two-dimensional electron gas at the interface and bulk GaN were identified. Barrier-layer composition and electric field were determined from the AlGaN FranzKeldysh oscillations. For a high mobilityheterostructure grown on SiC measured AlGaN polarizationelectric field and two-dimensional electron gas density approached values predicted by a standard bandstructure model. The two-dimensional electron gas produced a broad field-tunable first derivative electroreflectance feature. With a dielectric function calculation we describe the line shape and relative amplitude of the two-dimensional electron gas electroreflectance feature for a wide range of electron density and applied field values.

S. R. Kurtz; A. A. Allerman; D. D. Koleske; A. G. Baca; R. D. Briggs

2004-01-01T23:59:59.000Z

295

Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 {mu}m  

SciTech Connect (OSTI)

The spectral-kinetic properties of heterostructures with GaAs/GaAsSb-based and GaAsSb/InGaAs/GaAs-based quantum wells, emitting in the range of 1.0-1.2 {mu}m are studied with picosecond and nanosecond temporal resolution. Intense photoluminescence in the GaAsSb/InGaAs/GaAs structure, as well as an increase in the photoluminescence wavelength by a factor of 2.5 and a shift of the location of the maximum of the peak ({approx}100 meV) to the longer-wavelength region were observed up to room temperature. It is established that as the molar fraction of Sb and the thickness of the InGaAs layer increase, the energy of the fundamental transition decreases by a factor of 140 meV compared with the GaAsSb/InGaAs/GaAs structure with a lower Sb content and a smaller thickness of the InGaAs layer. At 300 K, the emission wavelength of such a structure was 1.18 {mu}m. In addition, an increase in the thickness of the InGaAs layer led to an increase in the room-temperature photoluminescence intensity by a factor of 60, which is associated with a decrease in the energy of the fundamental state for electrons in the InGaAs layer and, consequently, to larger electron localization and smaller temperature quenching of photoluminescence.

Morozov, S. V., E-mail: more@ipm.sci.-nnov.ru; Kryzhkov, D. I.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N.; Vikhrova, O. I. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)] [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

2013-11-15T23:59:59.000Z

296

Vacancy-Induced 22 Reconstruction of the Ga(111) Surface of GaAs  

Science Journals Connector (OSTI)

Vacancy formation on the GaAs(111) surface is calculated to be strongly exothermic in character. The creation of one vacancy in each 22 cell allows the remaining Ga surface atoms to have a large inward relaxation, resulting in a 2.3-eV reduction in energy. It also transforms the polar (111) surface into a nonpolar (110)-like surface. The calculations provide strong support for the vacancy model of Tong et al., which is determined from analysis of low-energy-electron-diffraction data.

D. J. Chadi

1984-05-21T23:59:59.000Z

297

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect (OSTI)

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Nel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

298

Observation of photo darkening in self assembled InGaAs/GaAs quantum dots  

SciTech Connect (OSTI)

Photo darkening was observed in epitaxial InGaAs/GaAs quantum dots (QDs). The photoluminescence (PL) intensity of the QDs showed a non-reversible decrease under continuous laser irradiation. The time constants varied from tens of minutes to several hours, depending on the applied laser power. Based on the spectral evolution, it was concluded that the observed phenomenon should originate from laser induced structural damage and a sustained increase of non-radiative recombination rate in the wetting layer. Additionally, according to the PL decay dynamics at different laser powers, it is argued that there should exist other processes that hinder PL degradation at a high laser power.

Zhang Hongyi; Chen Yonghai; Zhou Xiaolong; Jia Yanan; Ye Xiaoling; Xu Bo; Wang Zhanguo [Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

2013-05-07T23:59:59.000Z

299

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect (OSTI)

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

300

Method of bonding single crystal quartz by field-assisted bonding  

DOE Patents [OSTI]

The method of producing a hermetic stable structural bond between quartz crystals includes providing first and second quartz crystals and depositing thin films of borosilicate glass and silicon on portions of the first and second crystals, respectively. The portions of the first and second crystals are then juxtaposed in a surface contact relationship and heated to a temperature for a period sufficient to cause the glass and silicon films to become electrically conductive. An electrical potential is then applied across the first and second crystals for creating an electrostatic field between the adjoining surfaces and causing the juxtaposed portions to be attracted into an intimate contact and form a bond for joining the adjoining surfaces of the crystals.

Curlee, Richard M. (Tijeras, NM); Tuthill, Clinton D. (Edgewood, NM); Watkins, Randall D. (Albuquerque, NM)

1991-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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301

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells  

SciTech Connect (OSTI)

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

2014-01-21T23:59:59.000Z

302

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect (OSTI)

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

303

Metal-on-Metal Bonding and Rebonding Revisited  

Science Journals Connector (OSTI)

Density-functional calculations for a wide variety of metals show that, contrary to rebonding theory, ad-dimers do not have notably longer surface bonds than adatoms, do not reside farther above the surface, and do not meet the rebonding arguments for augmented mobility. Rebonding contributes to destabilize ad-dimers, but does not explain inherently weak ad-dimer bonds.

Alexander Bogicevic

1999-06-28T23:59:59.000Z

304

Localized corrosion of GaAs surfaces and formation of porous GaAs  

SciTech Connect (OSTI)

The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

Schmuki, P.; Vitus, C.M.; Isaacs, H.S. [Brookhaven National Lab., Upton, NY (United States); Fraser, J.; Graham, M.J. [National Research Council of Canada, Ottawa, ON (Canada). Inst. for Microstructural Sciences

1995-12-01T23:59:59.000Z

305

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network [OSTI]

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

306

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect (OSTI)

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; zgr, .; Morko, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

307

Clean Renewable Energy Bonds (CREBs) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Clean Renewable Energy Bonds (CREBs) Clean Renewable Energy Bonds (CREBs) Clean Renewable Energy Bonds (CREBs) < Back Eligibility Local Government Municipal Utility Rural Electric Cooperative Schools State Government Tribal Government Savings Category Bioenergy Buying & Making Electricity Water Solar Wind Program Info Start Date 09/01/2010 (New CREBs Electric Cooperatives Solicitation) Expiration Date 11/01/2010 Program Type Federal Loan Program Rebate Amount Varies Provider U.S. Internal Revenue Service '''''Note: The IRS is not currently accepting applications for New CREB bond volume. The deadline for New CREB applications from electric cooperatives under IRS Announcement 2010-54 expired November 1, 2010. Bond volume for other eligible sectors (government entities and public power providers) was fully allocated in October 2009.

308

Renewable Energy Project Bond Program | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Project Bond Program Project Bond Program Renewable Energy Project Bond Program < Back Eligibility Commercial Savings Category Bioenergy Commercial Heating & Cooling Manufacturing Buying & Making Electricity Alternative Fuel Vehicles Hydrogen & Fuel Cells Water Solar Wind Program Info State Idaho Program Type State Bond Program Provider Idaho Energy Resources Authority Legislation enacted in Idaho in April 2005 ([http://legislature.idaho.gov/legislation/2005/S1192.html Senate Bill 1192]) allows independent (non-utility) developers of renewable energy projects in the state to request financing from the Idaho Energy Resources Authority, a state bonding authority created in March 2005 by the Environment, Energy and Technology Energy Resources Authority Act (House Bill 106). The authority was created to finance the construction of

309

Energetics of Hydrogen Bond Network Rearrangements in Liquid Water  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Energetics of Hydrogen Bond Network Rearrangements in Liquid Water Print Energetics of Hydrogen Bond Network Rearrangements in Liquid Water Print The unique chemical and physical properties of liquid water are thought to result from the highly directional hydrogen bonding (H-bonding) network structure and its associated dynamics. However, despite intense experimental and theoretical scrutiny, a complete description of this structure has been elusive. Recently, with the help of their novel liquid microjet apparatus, a University of California, Berkeley, group derived a new energy criterion for H-bonds based on experimental data. With this new criterion based on analysis of the temperature dependence of the x-ray absorption spectra of normal and supercooled liquid water, they concluded that the traditional structural model of water is valid.

310

Energetics of Hydrogen Bond Network Rearrangements in Liquid Water  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Energetics of Hydrogen Bond Network Rearrangements in Liquid Water Print Energetics of Hydrogen Bond Network Rearrangements in Liquid Water Print The unique chemical and physical properties of liquid water are thought to result from the highly directional hydrogen bonding (H-bonding) network structure and its associated dynamics. However, despite intense experimental and theoretical scrutiny, a complete description of this structure has been elusive. Recently, with the help of their novel liquid microjet apparatus, a University of California, Berkeley, group derived a new energy criterion for H-bonds based on experimental data. With this new criterion based on analysis of the temperature dependence of the x-ray absorption spectra of normal and supercooled liquid water, they concluded that the traditional structural model of water is valid.

311

Energetics of Hydrogen Bond Network Rearrangements in Liquid Water  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Energetics of Hydrogen Bond Network Rearrangements in Liquid Water Print Energetics of Hydrogen Bond Network Rearrangements in Liquid Water Print The unique chemical and physical properties of liquid water are thought to result from the highly directional hydrogen bonding (H-bonding) network structure and its associated dynamics. However, despite intense experimental and theoretical scrutiny, a complete description of this structure has been elusive. Recently, with the help of their novel liquid microjet apparatus, a University of California, Berkeley, group derived a new energy criterion for H-bonds based on experimental data. With this new criterion based on analysis of the temperature dependence of the x-ray absorption spectra of normal and supercooled liquid water, they concluded that the traditional structural model of water is valid.

312

The development of integrated chemical microsensors in GaAs  

SciTech Connect (OSTI)

Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

1999-11-01T23:59:59.000Z

313

CoNiGa High Temperature Shape Memory Alloys  

E-Print Network [OSTI]

commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

Dogan, Ebubekir

2011-10-21T23:59:59.000Z

314

The Essentials for GA Water Planning The Relationship  

E-Print Network [OSTI]

Water Plan and the Alabama-Florida-Georgia Water Sharing Dispute (The failure to agree on the two Management F. Conservation & Reuse a. Programs for Water Use Efficiency b. Consumptive Use & Return Flows GThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

Rosemond, Amy Daum

315

Measuring Electrostatic Fields in Both Hydrogen-Bonding and Non-Hydrogen-Bonding Environments Using Carbonyl Vibrational Probes  

E-Print Network [OSTI]

of the probe's difference dipole, which is determined by measuring the vibrational Stark effect and definesMeasuring Electrostatic Fields in Both Hydrogen-Bonding and Non- Hydrogen-Bonding Environments Using Carbonyl Vibrational Probes Stephen D. Fried, Sayan Bagchi, and Steven G. Boxer* Department

Boxer, Steven G.

316

Electronic structure of metallic antiperovskite compound GaCMn3  

Science Journals Connector (OSTI)

We have investigated the electronic structures of antiperovskite GaCMn3 and related Mn compounds SnCMn3, ZnCMn3, and ZnNMn3. In the paramagnetic state of GaCMn3, the Fermi surface nesting feature along the ?R direction is observed, which induces the antiferromagnetic (AFM) spin ordering with the nesting vector Q??R. Calculated susceptibilities confirm the nesting scenario for GaCMn3, and also explain various magnetic structures of other antiperovskite compounds. Through the band folding effect, the AFM phase of GaCMn3 is stabilized. Nearly equal densities of states at the Fermi level in the ferromagnetic and AFM phases of GaCMn3 indicate that two phases are competing in the ground state.

J. H. Shim; S. K. Kwon; B. I. Min

2002-07-10T23:59:59.000Z

317

Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers  

Science Journals Connector (OSTI)

In0.135Ga0.865N/GaN pin solar cells are fabricated and investigated with three types of transparent current spreading layers (TCSLs): Ni/Au layer type (Ni/Au-L), Ni/Au grid type (Ni/Au-G), and ITO layer type (I...

X. M. Cai; Y. Wang; Z. D. Li; X. Q. Lv; J. Y. Zhang; L. Y. Ying

2013-05-01T23:59:59.000Z

318

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics  

E-Print Network [OSTI]

injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

Klotzkin, David

319

Surface roughening during depth profiling by Secondary Ion Mass Spectrometry (SIMS) in GaAlAs and GaAs  

Science Journals Connector (OSTI)

During bombardment of Ga1?xAlxAs and GaAs with oxygen we found an abrupt transition to higher sputter rates, change of the useful yield and significant increase of surface roughness at a well defined depth, which...

M. Gericke; T. Lill; M. Trapp; C. -E. Richter

320

GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization  

E-Print Network [OSTI]

radiation hardness than Si, GaAs, CdS and GaN, therefore it should be suitable for space applications. Last novel optoelectronic devices circumventing the problem of p-type doping of ZnO. In such Al devices become reality: the problem of p-type doping of ZnO. So far, there is no way to reliably produce

Wetzel, Christian M.

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network [OSTI]

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

322

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network [OSTI]

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm GaN-on-Si...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

323

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network [OSTI]

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

324

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network [OSTI]

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

325

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1  

E-Print Network [OSTI]

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1 Jie Lian,2,3 Wei Lu,4 and Lumin Wang1,5,* 1 Department of Materials Science and Engineering, University Arbor, Michigan 48109, USA 3 Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer

Lu, Wei

326

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network [OSTI]

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

327

Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics  

SciTech Connect (OSTI)

In this letter we report on the inductively coupled plasma reactive ion etching (ICP-RIE) of InGaAsSb and AlGaAsSb for the fabrication of quaternary monolithic interconnected module (MIM) thermophotovoltaic (TPV) devices. A rapid dry etch process is described that produces smooth surfaces using BCl[sub]3 for AlGaAsSb and InGaAsSb capped with GaSb. Uncapped InGaAsSb was etched by adding an H[sub]2 plasma preclean to reduce surface oxides. InGaAsSb etch rate was studied as a function of accelerating voltage, RF power, temperature and pressure. The etch conditions found for InGaAsSb were used for AlGaAsSb etching to determine the effectiveness for isolation of the MIM cells.

Palmisiano, M. N.; Peake, G. M.; Shul, R. J.; Ashby, C. I.; Cederberg, J. G.; Hafich, M. J.; Biefeld, R. M.

2002-10-01T23:59:59.000Z

328

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect (OSTI)

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

329

Magnetic-field effects on quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells  

Science Journals Connector (OSTI)

We have used the variational procedure in the effective-mass and nondegenerate parabolic band approximations in order to investigate the effects of a magnetic field on the exciton effective mass and dispersion in semiconductor heterostructures. Calculations are performed for bulk GaAs, and two-dimensional and quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells for applied magnetic fields perpendicular to the layers. A simple hydrogenlike envelope wave function provides the expected behavior for the exciton dispersion in a wide range of the center-of-mass momenta, and an analytical expression for the exciton effective mass is obtained. Present results lead to a magnetic-field dependent exciton effective mass and dispersion in quite good agreement with available experimental measurements in coupled GaAs?(Ga,Al)As quantum wells.

E. Reyes-Gmez, L. E. Oliveira, and M. de Dios-Leyva

2005-01-14T23:59:59.000Z

330

Sputtering of Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN by electrosprayed nanodroplets  

SciTech Connect (OSTI)

This article presents a characterization of the damage caused by energetic beams of electrosprayed nanodroplets striking the surfaces of single-crystal semiconductors including Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN. The sputtering yield (number of atoms ejected per projectile's molecule), sputtering rate, and surface roughness are measured as functions of the beam acceleration potential. The maximum values of the sputtering yields range between 1.9 and 2.2 for the technological important but difficult to etch SiC and GaN respectively, and 4.5 for Ge. The maximum sputtering rates for the non-optimized beam flux conditions used in our experiments vary between 409?nm/min for SiC and 2381?nm/min for GaSb. The maximum sputtering rate for GaN is 630?nm/min. Surface roughness increases modestly with acceleration voltage, staying within 2?nm and 20?nm for all beamlet acceleration potentials and materials except Si. At intermediate acceleration potentials, the surface of Si is formed by craters orders of magnitude larger than the projectiles, yielding surface roughness in excess of 60?nm. The effect of projectile dose is studied in the case of Si. This parameter is correlated with the formation of the large craters typical of Si, which suggests that the accumulation of damage following consecutive impacts plays an important role in the interaction between beamlet and target.

Borrajo-Pelaez, Rafael; Grustan-Gutierrez, Enric; Gamero-Castao, Manuel, E-mail: mgameroc@uci.edu [Department of Mechanical and Aerospace Engineering, University of California, Irvine, California 92697 (United States)

2013-11-14T23:59:59.000Z

331

E-Print Network 3.0 - adhesively bonded lap Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

The lap-shear strengths of adhesively bonded polystyrene (PS), high-density polyethylene (HDPE... bonded in a lap-shear geometry. The bonded area of adhesion was nominally...

332

Hydrogen Bond Dynamics Probed with Ultrafast Infrared Heterodyne-Detected Multidimensional Vibrational Stimulated Echoes  

E-Print Network [OSTI]

Hydrogen Bond Dynamics Probed with Ultrafast Infrared Heterodyne-Detected Multidimensional, USA (Received 24 February 2003; published 3 December 2003) Hydrogen bond dynamics are explicated hydrogen bonded network are measured with ultrashort (

Fayer, Michael D.

333

Hydrogen-Bond Networks: Strengths of Different Types of Hydrogen Bonds and An Alternative to the Low Barrier Hydrogen-Bond Proposal  

SciTech Connect (OSTI)

We report quantifying the strengths of different types of hydrogen bonds in hydrogen bond networks (HBNs) via measurement of the adiabatic electron detachment energy of the conjugate base of a small covalent polyol model compound (i.e., (HOCH2CH2CH(OH)CH2)2CHOH) in the gas phase and the pKa of the corresponding acid in DMSO. The latter result reveals that the hydrogen bonds to the charged center and those that are one solvation shell further away (i.e., primary and secondary) provide 5.3 and 2.5 pKa units of stabilization per hydrogen bond in DMSO. Computations indicate that these energies increase to 8.4 and 3.9 pKa units in benzene and that the total stabilizations are 16 (DMSO) and 25 (benzene) pKa units. Calculations on a larger linear heptaol (i.e., (HOCH2CH2CH(OH)CH2CH(OH)CH2)2CHOH) reveal that the terminal hydroxyl groups each contribute 0.6 pKa units of stabilization in DMSO and 1.1 pKa units in benzene. All of these results taken together indicate that the presence of a charged center can provide a powerful energetic driving force for enzyme catalysis and conformational changes such as in protein folding due to multiple hydrogen bonds in a HBN.

Shokri, Alireza; Wang, Yanping; O'Doherty, George A.; Wang, Xue B.; Kass, Steven R.

2013-11-27T23:59:59.000Z

334

Semi-flexible hydrogen-bonded and non-hydrogen bonded lattice polymers  

E-Print Network [OSTI]

We investigate the addition of stiffness to the lattice model of hydrogen-bonded polymers in two and three dimensions. We find that, in contrast to polymers that interact via a homogeneous short-range interaction, the collapse transition is unchanged by any amount of stiffness: this supports the physical argument that hydrogen bonding already introduces an effective stiffness. Contrary to possible physical arguments, favouring bends in the polymer does not return the model's behaviour to that comparable to the semi-flexible homogeneous interaction model, where the canonical $\\theta$-point occurs for a range of parameter values. In fact, for sufficiently large bending energies the crystal phase disappears altogether, and no phase transition of any type occurs. We also compare the order-disorder transition from the globule phase to crystalline phase in the semi-flexible homogeneous interaction model to that for the fully-flexible hybrid model with both hydrogen and non-hydrogen like interactions. We show that these phase transitions are of the same type and are a novel polymer critical phenomena in two dimensions. That is, it is confirmed that in two dimensions this transition is second-order, unlike in three dimensions where it is known to be first order. We also estimate the crossover exponent and show that there is a divergent specific heat, finding $\\phi=0.7(1)$ or equivalently $\\alpha=0.6(2)$. This is therefore different from the $\\theta$ transition, for which $\\alpha=-1/3$.

J Krawczyk; AL Owczarek; T Prellberg

2008-07-06T23:59:59.000Z

335

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect (OSTI)

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

336

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect (OSTI)

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

337

Exciton recombination dynamics in InxGa1-xAs/GaAs quantum wells  

Science Journals Connector (OSTI)

Low-temperature decay times ?PL are reported for a series of InxGa1-xAs/GaAs quantum wells. These show a nearly linear increase with increasing thickness (4?Lz?10 nm, x=0.15) but recombination in the widest well (12 nm) is dominated by nonradiative effects. The decay time increases almost linearly with temperature up to 50 K, as expected for free excitons. An increase in ?PL with increasing In composition (0.05?x?0.25, Lz=8 nm) is also observed. Wells with different In compositions exhibit a similar temperature behavior and there is a weak influence of strain on the decay time. Additional peaks in the photoluminescence spectra occur to the low-energy side of the free-exciton peaks. These features, which exhibit longer decay times, are attributed to excitons localized in In-rich islands arising from indium segregation.

Haiping Yu; Christine Roberts; Ray Murray

1995-07-15T23:59:59.000Z

338

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes  

SciTech Connect (OSTI)

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07T23:59:59.000Z

339

E-Print Network 3.0 - adhesive bond strength Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

The lap-shear strengths of adhesively bonded polystyrene (PS), high-density polyethylene (HDPE... 12;strength of the substrate, or the adhesive strength of the bond 9....

340

E-Print Network 3.0 - affects durably bonding Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

adhesive layers are less affected, creep behavior of adhesively bonded joints... ABSTRACT SMITH, GLEN. Bond Characteristics and Qualifications of Adhesives for ... Source:...

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

E-Print Network 3.0 - alteredintramolecular hydrogen-bonding...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

alteredintramolecular hydrogen-bonding pattern Search Powered by Explorit Topic List Advanced Search Sample search results for: alteredintramolecular hydrogen-bonding pattern Page:...

342

E-Print Network 3.0 - amide bonds stabilize Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Amide-Amide and Amide-Water Hydrogen Bonds Summary: Bonds: Implicationsfor Protein Folding and Stability Eric S.Eberhardt and Ronald T. Rained Department... folds, many of...

343

Do Main Chain Hydrogen Bonds Create Dominant Electron Transfer Pathways?  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Main Chain Hydrogen Bonds Create Dominant Electron Transfer Pathways? An Main Chain Hydrogen Bonds Create Dominant Electron Transfer Pathways? An Investigation in Designed Proteins Yongjian Zheng, Martin A. Case, James F. Wishart, and George L. McLendon J. Phys. Chem. B, 107, 7288-7292 (2003). [Find paper at ACS Publications] Abstract: We have investigated the contribution of main chain hydrogen bond (H-bond) pathways to the tunneling matrix elements which control electron transfer (ET) rates across an alpha-helical protein matrix. The paradigm system for these investigations is a metal ion-assembled parallel three-helix bundle protein that contains a ruthenium(II) tris(bipyridyl) electron donor and a ruthenium(III) pentammine electron acceptor separated by a direct metal to metal distance of ca. 19 Å, requiring tunneling through 15 Å of

344

Laser surface roughening of PTFE for increased bonding strength  

Science Journals Connector (OSTI)

Treatment of pure Teflon (PTFE) with UV laser pulses (193nm) produces area-selective rough surfaces. These irradiated areas are bondable with ordinary adhesives. The stability of the bonds is about one order ...

M. Rauh; J. Ihlemann; A. Koch

2007-08-01T23:59:59.000Z

345

Ultrafast structural fluctuations and rearrangements of water's hydrogen bonded network  

E-Print Network [OSTI]

Aqueous chemistry is strongly influenced by water's ability to form an extended network of hydrogen bonds. It is the fluctuations and rearrangements of this network that stabilize reaction products and drive the transport ...

Loparo, Joseph J. (Joseph John)

2007-01-01T23:59:59.000Z

346

Economic Significance, Survey of Applications, and Six Bonding Functions  

Science Journals Connector (OSTI)

The following remarks will review the uses of phenolic resins and their distribution throughout the various areas of application, making reference to the six bonding functions that phenolic resins mainly ass...

Dr. Arno Gardziella; Dr. Louis A. Pilato; Dr. Andre Knop

2000-01-01T23:59:59.000Z

347

Bond resonance energy and verification of the isolated pentagon rule  

SciTech Connect (OSTI)

The isolated pentagon rule (IPR) states that fullerenes with isolated pentagons are kinetically much more stable than their fused pentagon counterparts. This rule can be verified in terms of a graph-theoretically defined bond resonance energy. In general, a {pi} bond shared by two pentagons has a large negative bond resonance energy, thus contributing significantly to the increase in kinetic instability or chemical reactivity of the molecule. The existence of such highly antiaromatic local structures sharply distinguishes IPR-violating fullerenes from isolated-pentagon isomers. {pi}bonds shared by two pentagons are shared by many antiaromatic conjugated circuits but not by relatively small aromatic conjugated circuits. 39 refs., 3 figs., 5 tabs.

Aihara, Jun Ichi [Shizuoka Univ. (Japan)

1995-04-12T23:59:59.000Z

348

Surface Modification by Atmospheric Pressure Plasma for Improved Bonding  

E-Print Network [OSTI]

prepared using (a) the IPA wipe (control), (b) sanding, (c)of aluminum alloy 2024: a) IPA wiped, b) sanded with 180bond primer with a) the IPA wipe (control), b) sanding, c)

Williams, Thomas Scott

2013-01-01T23:59:59.000Z

349

Low-Cost Financing with Clean Renewable Energy Bonds  

Broader source: Energy.gov [DOE]

Contains information from the TAP Webcast on June 24, 2009 on clean renewable energy bonds from Claire Kreycik on feed-in tariffs, an economic resource for developing renewable energy.

350

Nature of Bridging Bonds in Lithium and Potassium Acetate Dimers  

Science Journals Connector (OSTI)

The structures of lithium and potassium acetates were studied by the RHF/6-31G*...3COOLi)2 and (CH3COOK)2 are electrostatic in nature. The bridging lithium bond is intermediate between hydrogen and ionic, ... of ...

I. A. Panteleev; S. G. Semenov; D. N. Glebovskii

351

Mpemba paradox: Hydrogen bond memory and water-skin supersolidity  

E-Print Network [OSTI]

Numerical reproduction of measurements, experimental evidence for skin super-solidity and hydrogen-bond memory clarified that Mpemba paradox integrates the heat emission-conduction-dissipation dynamics in the source-path-drain cycle system.

Chang Q Sun

2015-01-05T23:59:59.000Z

352

Conservation of bond lengths in strained Ge-Si layers  

Science Journals Connector (OSTI)

The combined techniques of x-ray-absorption fine structure and x-ray diffraction have been used to study the strain and bond distortions in epitaxial Ge-Si on Si(001). In a 31% Ge, 340- pseudomorphic Ge-Si film, the Ge-Ge and Ge-Si first-neighbor bond lengths have been found to be 2.440.02 and 2.380.02 , respectively. The lattice parameter perpendicular to the Ge-Si/Si(001) interface has been found to be a?=5.5520.002 , in agreement with the predictions of macroscopic elastic theory. These results show that the bond-length strain in the epitaxial layer appears in the second and higher coordination shells, rather than in the nearest-neighbor bond lengths, which remain the same as in unstrained Ge-Si. A microscopic model is presented that accounts for these findings.

J. C. Woicik; C. E. Bouldin; M. I. Bell; J. O. Cross; D. J. Tweet; B. D. Swanson; T. M. Zhang; L. B. Sorensen; C. A. King; J. L. Hoyt; P. Pianetta; J. F. Gibbons

1991-01-15T23:59:59.000Z

353

Low-Cost Direct Bonded Aluminum (DBA) Substrates  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Managed by UT-Battelle for the Department of Energy Low-Cost Direct Bonded Aluminum (DBA) Substrates H. -T. Lin, A. A. Wereszczak, and S. Waters Oak Ridge National Laboratory This...

354

Low-Cost Direct Bonded Aluminum (DBA) Substrates  

Broader source: Energy.gov (indexed) [DOE]

Low-Cost Direct Bonded Aluminum (DBA) Substrates H. -T. Lin, A. A. Wereszczak, M. L. Santella, and G. Muralidharan Oak Ridge National Laboratory (ORNL) This presentation does not...

355

Application of Social Impact Bonds in Built Infrastructure Sustainability Projects  

E-Print Network [OSTI]

This study examines a first look at the implementation of Social Impact Bonds (SIB) for sustainability projects by comparing two cases. The cases are described using System Dynamic (SD) modeling to portray the feedback structures and characteristics...

White, Robert Joseph

2014-05-01T23:59:59.000Z

356

IRS Announces New Tribal Economic Development Bond Allocation Guidance |  

Broader source: Energy.gov (indexed) [DOE]

IRS Announces New Tribal Economic Development Bond Allocation IRS Announces New Tribal Economic Development Bond Allocation Guidance IRS Announces New Tribal Economic Development Bond Allocation Guidance July 18, 2012 - 3:46pm Addthis To promote economic growth in tribal communities, Treasury and the Internal Revenue Service (IRS) published new guidance on July 18, 2012, allocating Tribal Economic Development Bonds (TEDBs). The TEDB program was established under the American Reinvestment and Recovery Act, and provides Tribes with the authority to issue tax-exempt debt for a wider range of activities to spur job creation and promote economic growth in Indian country. Providing Tribes with the ability to issue tax-exempt debt for a broader scope of activities similar to that available to states and local governments lowers

357

MODE II FRACTURE BEHAVIOR OF BONDED VISCOELASTIC THERMAL COMPRESSED WOOD  

E-Print Network [OSTI]

MODE II FRACTURE BEHAVIOR OF BONDED VISCOELASTIC THERMAL COMPRESSED WOOD Andreja Kutnar* Graduate Student Department of Wood Science and Technology Biotechnical Faculty University of Ljubljana 1000 Ljubljana, Slovenia Frederick A. Kamke Professor John A. Nairn Professor Department of Wood Science

Nairn, John A.

358

Photovoltaic properties of GaAs:Be nanowire arrays  

SciTech Connect (OSTI)

Arrays of GaAs:Be nanowires are synthesized by molecular beam epitaxy on GaAs(111)B substrates. Prototypes of photovoltaic converters in which the grown nanowire arrays are used as active layers are produced by means of successive photolithography, etching, and metallization processes. Studying the photovoltaic properties of the fabricated structures using a solar radiation simulator demonstrates that the solarenergy conversion efficiency is about 0.1%. The value of the efficiency recalculated with the area occupied by the p-type nanowires on the surface of the n-type GaAs substrate taken into account amounts to 1.1%.

Bouravleuv, A. D.; Beznasyuk, D. V.; Gilstein, E. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Tchernycheva, M.; Luna Bugallo, A. De; Rigutti, L. [University Paris Sud 11, Institut d'Electronique Fondamentale UMR CNRS 8622 (France); Yu, L. [CNRS, Laboratoire de Physique des Interfaces et des Couches Minces (LPICM), Ecole Polytechnique (France); Proskuryakov, Yu. [University of Liverpool, Stephenson Institute for Renewable Energy (United Kingdom); Shtrom, I. V.; Timofeeva, M. A. [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation); Samsonenko, Yu. B.; Khrebtov, A. I.; Cirlin, G. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-06-15T23:59:59.000Z

359

Photocurrent Spectroscopy of Single Wurtzite GaAs Nanowires  

SciTech Connect (OSTI)

Photocurrent of single wurtzite GaAs nanowires grown by Au-assisted molecular beam epitaxy is measured at room and low temperature (10 K). At room temperature a high photo-response with more than two orders of magnitude increase of current is observed. The wavelength dependence of the photocurrent shows a sharp change near the zinc blende GaAs band gap. The absence of the free exciton peak in the low temperature photocurrent spectrum, and problems related to determining the exact position of the energy bandgap of wurtzite GaAs from the observed data are discussed.

Kim, D. C.; Ahtapodov, L.; Boe, A. B.; Moses, A. F.; Dheeraj, D. L.; Fimland, B. O.; Weman, H. [Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway); Choi, J. W.; Ji, H.; Kim, G. T. [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

2011-12-23T23:59:59.000Z

360

Effects of Ga ion-beam irradiation on monolayer graphene  

SciTech Connect (OSTI)

The effects of Ga ion on the single layer graphene (SLG) have been studied by Raman spectroscopy (RS), SEM, and field-effect characterization. Under vacuum conditions, Ga ion-irradiation can induce disorders and cause red shift of 2D band of RS, rather than lattice damage in high quality SLG. The compressive strain induced by Ga ion decreases the crystalline size in SLG, which is responsible for the variation of Raman scattering and electrical properties. Nonlinear out-put characteristic and resistance increased are also found in the I-V measurement. The results have important implications during CVD graphene characterization and related device fabrication.

Wang, Quan; Mao, Wei; Zhang, Yanmin; Shao, Ying; Ren, Naifei [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China)] [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Ge, Daohan [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China) [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2013-08-12T23:59:59.000Z

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Bonded Bracket Assmebly for Frameless Solar Panels  

SciTech Connect (OSTI)

In February 2011 the US Department of Energy announced their new Sunshot Initiative. The Sunshot goal is to reduce the total cost of solar energy systems by about 75 percent before the end of the decade. The DOE estimated that a total installed cost of $1 per watt for photovoltaic systems would be equivalent to 6???¢/kilowatt hour (kWh) for energy available from the grid. The DOE also estimated that to meet the $1 per watt goal, PV module costs would need to be reduced to $.50 per watt, balance of systems costs would need to be reduced to $.40 per watt, and power electronic costs would need to reach $.10 per watt. To address the BOS balance of systems cost component of the $1 per watt goal, the DOE announced a funding opportunity called (BOS-X) Extreme Balance of System Hardware Cost Reductions. The DOE identified eight areas within the total BOS costs: 1) installation labor, 2) installation materials, 3) installation overhead and profit, 4) tracker, 5) permitting and commissioning, 6) site preparation, 7) land acquisition, 8) sales tax. The BOS-X funding announcement requested applications in four specific topics: Topic 1: Transformational Building Integrated Photovoltaic (BIPV) Modules Topic 2: Roof and Ground Mount Innovations Topic 3: Transformational Photovoltaic System Designs Topic 4: Development of New Wind Load Codes for PV Systems The application submitted by ARaymond Tinnerman reflected the requirements listed in Topic #2, Roof and Ground Mount Innovations. The goal of topic #2 was to develop technologies that would result in the extreme reduction of material and labor costs associated with applications that require physical connections and attachments to roof and ground mount structures. The topics researched in this project included component cost reduction, labor reduction, weight reduction, wiring innovations, and alternative material utilization. The project objectives included: 1) The development of an innovative quick snap bracket assembly that would be bonded to frameless PV modules for commercial rooftop installations. 2) The development of a composite pultruded rail to replace traditional racking materials. 3) In partnership with a roofing company, pilot the certification of a commercial roof to be solar panel compliant, eliminating the need for structural analysis and government oversight resulting in significantly decreased permitting costs. 4) Reduce the sum of all cost impacts in topic #2 from a baseline total of $2.05/watt to $.34/watt.

Murray, Todd

2013-01-30T23:59:59.000Z

362

New Bond Helps Toledo, Ohio, Expand Financing Pool  

Broader source: Energy.gov [DOE]

The BetterBuildings Northwest Ohio (BBNWO) Program, in conjunction with the Toledo Ohio Advanced Energy Improvement Corporationa pioneering Energy Special Improvement District in Ohio that allows energy efficiency improvements to be funded and paid for through property special assessmentshas received a second bond from the Toledo-Lucas County Port Authority. This bond is in the amount of $6,435,000.

363

Bond Distortions in Armchair Type Single Wall Carbon Nanotubes  

E-Print Network [OSTI]

The energy band gap structure and stability of (3,3) and (10,10) nanotubes have been comparatively investigated in the frameworks of the traditional form of the Su-Schrieffer-Heeger (SSH) model and a toy model including the contributions of bonds of different types to the SSH Hamiltonian differently. Both models give the same energy band gap structure but bond length distortions in different characters for the nanotubes.

N. Sunel; E. Rizaoglu; K. Harigaya; O. Ozsoy

2005-03-03T23:59:59.000Z

364

Method of making sintered ductile intermetallic-bonded ceramic composites  

DOE Patents [OSTI]

A method of making an intermetallic-bonded ceramic composite involves combining a particulate brittle intermetallic precursor with a particulate reactant metal and a particulate ceramic to form a mixture and heating the mixture in a non-oxidizing atmosphere at a sufficient temperature and for a sufficient time to react the brittle intermetallic precursor and the reactant metal to form a ductile intermetallic and sinter the mixture to form a ductile intermetallic-bonded ceramic composite. 2 figs.

Plucknett, K.; Tiegs, T.N.; Becher, P.F.

1999-05-18T23:59:59.000Z

365

BN Bonded BN fiber article and method of manufacture  

DOE Patents [OSTI]

A boron nitride bonded boron nitride fiber article and the method for its manufacture which comprises forming a shaped article with a composition comprising a bonding compound selected from boron oxide and boric acid and a structural fiber selected from the group consisting of boron oxide, boron nitride and partially nitrided boron oxide fibers, heating the composition in an anhydrous gas to a temperature above the melting point of the compound and nitriding the resulting article in ammonia gas.

Hamilton, Robert S. (Youngstown, NY)

1981-08-18T23:59:59.000Z

366

Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs  

Science Journals Connector (OSTI)

Electrolyte electroreflectance (EER) experiments were performed on In 0.22 Ga 0.78 As/GaAs single quantum wells grown by the conventional molecular-beam-epitaxy (MBE) shutter operation and also by modified MBE shutter operation intended to form more compositionally abrupt normal and inverted interfaces. The latter included controlled thermal desorption of the surface segregated In at the InGaAs layer surface (flash off) and the deposition of In at the InGaAs/GaAs interface to eliminate compositional broadening (predeposition). The fundamental energy gap and subband transitions were determined experimentally and compared with an accurate calculation of the potential well problem including strain. These results confirmed the segregation of In atoms near the interface. The segregation was maximum in the conventional (normal) MBE sample and least with the modified growth incorporating predeposition and flash off as expected. The segregated atoms are observed to act as dopants and form junctions near the InGaAs/GaAs interface. This study shows that EER can be used as an effective tool for studying the segregation process in MBE growth.

K. Chattopadhyay; J. Aubel; S. Sundaram; J. E. Ehret; R. Kaspi; Keith R. Evans

1997-01-01T23:59:59.000Z

367

Electronic and transport properties of polycrystalline Ba{sub 8}Ga{sub 15}Ge{sub 31} type I clathrate prepared by SPS method  

SciTech Connect (OSTI)

Samples of germanium Ba{sub 8}Ga{sub 15}Ge{sub 31} clathrate of type I were prepared using standard metallurgy methods. The structure, microstructure and phase composition of the prepared samples were analyzed by powder X-ray diffraction XRD and scanning electron microscope SEM combined with energy dispersive X-ray analysis EDX. Scanning thermoelectric microprobe STMP was used to characterize uniformity of Seebeck coefficient distribution at different stages of the material synthesis in order to optimize the synthesis method. Electrical conductivity, Seebeck coefficient and thermal conductivity were measured in the temperature range 20-450 Degree-Sign C. Based on the measured electrical properties and Hall carrier concentration n=5-9{center_dot}10{sup 20} cm{sup -3} at room temperature, electron effective mass m{sup Low-Asterisk} was estimated to be between 2.1-3 m{sub 0}. Preliminary FP-LAPW DFT calculations were performed for two chosen high symmetry superstructures Ba{sub 8}Ga{sub 16}Ge{sub 30} and Ba{sub 8}Ga{sub 6}Ge{sub 40} by means of WIEN2K package. Additionally topological analysis of total electron density according to Bader's Quantum Theory of Atoms in Molecules was carried out. The energy band gaps were calculated to be 0.3 eV for Ba{sub 8}Ga{sub 16}Ge{sub 30} and 0.38 eV for Ba{sub 8}Ga{sub 6}Ge{sub 40} which was close to the experimental results for Ba{sub 8}Ga{sub 16}Ge{sub 30}. The observed electrical properties were compared with the electronic band structure calculations, showing good qualitative correlation between the measured transport properties and the theoretical predictions. - Graphical abstract: Scanning thermoelectric microprobe STMP was used to investigate uniformity of the prepared polycrystalline Ba{sub 8}Ga{sub 15}Ge{sub 31} clathrate samples at different synthesis stages. Maps and histograms of the Seebeck coefficient distribution (presented in the picture) for Ba{sub 8}Ga{sub 15}Ge{sub 31} ingot after the first synthesis stage showed it is not uniform. The Seebeck coefficient distribution in the ingot was bimodal. The same analysis for the sample after annealing and sintering showed that the Seebeck coefficient distribution is unimodal. Compared to the ingot from I synthesis stage a significant improvement of material uniformity was observed. Highlights: Black-Right-Pointing-Pointer Scanning thermoelectric microprobe STMP measurements show important uniformity change during sample annealing. Black-Right-Pointing-Pointer Calculated band gap E{sub g} values are close to the reported E{sub g}. Black-Right-Pointing-Pointer Ga/Ge ratio change doesn't affect significantly the bonding properties. Black-Right-Pointing-Pointer Band structure calculations show that bond's character agrees with the Zintl concept.

Leszczynski, J., E-mail: Juliusz.Leszczynski@agh.edu.pl [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Department of Inorganic Chemistry, Thermoelectric Research Laboratory, Krakow (Poland); Kolezynski, A. [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Department of Silicate Chemistry and Macromolecular Compounds, Krakow (Poland)] [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Department of Silicate Chemistry and Macromolecular Compounds, Krakow (Poland); Wojciechowski, K.T. [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Department of Inorganic Chemistry, Thermoelectric Research Laboratory, Krakow (Poland)] [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Department of Inorganic Chemistry, Thermoelectric Research Laboratory, Krakow (Poland)

2012-09-15T23:59:59.000Z

368

Time-Resolved Study of Bonding in Liquid Carbon  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Time-Resolved Study of Bonding Time-Resolved Study of Bonding in Liquid Carbon Time-Resolved Study of Bonding in Liquid Carbon Print Wednesday, 28 September 2005 00:00 We are accustomed to observing carbon in its elemental form as a solid, ranging from the soft "lead" in pencils to the precious gemstone in diamond rings. While considerable attention has been focused on solid forms of carbon, the properties of liquid carbon are much more difficult to measure accurately. The very strong bonding between carbon atoms that gives diamonds their hardness also makes carbon very difficult to melt, requiring temperatures above 5000 K at pressures above 100 bar. Maintaining such conditions in a laboratory is a challenge that has hampered efforts to fully understand the chemical bonding properties of this biologically, industrially, and environmentally important element. At the ALS, researchers have found a way to rapidly heat a carbon sample and contain the resulting liquid long enough to perform picosecond time-resolved x-ray absorption spectroscopy. The technique provides a way to measure the bonding properties of liquid carbon at near-solid densities that can then be compared with results from molecular dynamics simulations.

369

Transient liquid phase bonding of structural intermetallic compounds  

Science Journals Connector (OSTI)

The intermetallic compound NiAl is a candidate material for high-temperature structural applications, for example in the hot-zone of aero gas turbine engines. However, if this material is to find significant structural applications, methodologies for primary fabrication of complex components and post-service repair will be required. In particular, joining technologies suitable for bonding NiAl to nickel-base alloys are required. This paper examines transient liquid phase (TLP) bonding as a method of joining NiAl to nickel-base alloys. The focus of the paper is microstructural development at the bond-line and in the adjacent (nickel-base and NiAl) substrates. Two different interlayer materials are considered in this paper, namely: Ni 4.5 wt.% Si 3.2 wt.%B (designated by the American Welding Society as 'BNi-3') and commercially pure copper. Bonds between binary, nominally-stoichiometric NiAl and both commercially pure nickel and Martin Marietta 247 are examined using edge-on transmission electron microscopy. The paper considers the character of the isothermal solidification process, the formation of second-phases at the bond-line and in the adjacent substrates and the extent to which NiAl-Ni-base alloy TLP bonds obey the assumptions implicit in standard models of the TLP process.

W.F. Gale; Y. Guan; S.V. Orel

1998-01-01T23:59:59.000Z

370

Theory of bonding of transition metals to nontransition metals  

Science Journals Connector (OSTI)

We present a theory of the chemical bond in compounds consisting of both transition metals and nontransition metals. Chemical trends in the bonding properties are established by directly comparing the total energies of a large number of such compounds with the total energies of their constituents. These chemical trends are analyzed in terms of the s-, p-, and d-like state densities of the compounds and the constituents. Rather different types of bonding are shown to result when the atomic s and p levels of the nontransition metal lie above, below, and near the energy of the transition-metal d level. The heat of compound formation is shown to result from a competition between two simple physical effects: (1) the weakening of the transition-metal bonds by the lattice dilatation required for the accommodation of the nontransition metal, and (2) the increased bonding which results from the occupation of the bonding members of the hybrid states formed from the interaction between the transition-metal d states and the s-p states on the nontransition metal. Our theoretical values for the heats of formation of these compounds are generally similar to those given by Miedema's empirical formula. Distinctive aspects of the variation of the heat of formation with the number of valence electrons reveal, however, that the microscopic picture on which the empirical formula is based is quite different from that given by our self-consistent energy-band theory.

C. D. Gelatt; Jr.; A. R. Williams; V. L. Moruzzi

1983-02-15T23:59:59.000Z

371

The effect of CdS QDs structure on the InGaP/GaAs/Ge triple junction solar cell efficiency  

Science Journals Connector (OSTI)

This work describes optical and electrical characteristics of InGaP/GaAs/Ge triple-junction (T-J) solar cells with CdS quantum dots (QDs) ... quantum dot effectively enhance the overall power conversion efficiency

Chen-Chen Chung; Binh Tinh Tran; Hau-Vei Han; Yen-Teng Ho

2014-03-01T23:59:59.000Z

372

Improvement of orange ii photobleaching by moderate Ga3+ doping of titania and detrimental effect of structural disorder on Ga overloading  

Science Journals Connector (OSTI)

Highly photoactive Ga3+-doped anatase modification of titania was prepared by homogeneous hydrolysis of aqueous solutions mixture of titanium oxo-sulphate TiOSO4 and gallium(III) nitrate with urea. Incorporation of Ga3+ ...

Vclav tengl, Jil Henych, Michaela Slun, Tom Matys Grygar, Jana Velick, Martin Kormunda

2014-01-01T23:59:59.000Z

373

Kinetics of indirect photoluminescence in GaAs/AlxGa1?x As double quantum wells in a random potential with a large amplitude  

Science Journals Connector (OSTI)

The kinetics of indirect photoluminescence of GaAs/AlxGa1?x As double quantum wells, characterized by a random potential with a large amplitude (the linewidth of the indirect photoluminescence is ...

L. V. Butov; A. V. Mintsev; A. I. Filin

1999-05-01T23:59:59.000Z

374

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices  

SciTech Connect (OSTI)

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy); Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio [University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

2014-02-21T23:59:59.000Z

375

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells  

SciTech Connect (OSTI)

GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

2013-05-15T23:59:59.000Z

376

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy  

Science Journals Connector (OSTI)

Time-resolved photoluminescence(TRPL) and positron annihilation measurements as well as Al0.23Ga0.77N/GaN heterostructuregrowth by metalorganic vapor phase epitaxy were carried out on very low defect density polar c-plane and nonpolar m-plane freestanding GaN (FS-GaN) substrates grown by hydride vapor phase epitaxy. Room-temperature photoluminescence(PL) lifetime for the near-band-edge (NBE) excitonic emission of the FS-GaN substrates increases with increasing positron diffusion length (L +); i.e. decreasing gross concentration of charged and neutral point defects and complexes. The best undoped c-plane FS-GaN exhibits record-long L + being 116?nm. The fast component of the PL lifetime for its NBE emission increases with temperature rise up to 100?K and levels off at approximately 1.1?ns. The result implies a saturation in thermal activation of nonradiative recombination centers. The surface and interface roughnesses for a Si-doped Al0.23Ga0.77N/GaN/Al0.18Ga0.82N/GaN heterostructure are improved by the use of FS-GaN substrates in comparison with the structure fabricated on a standard GaN template. The emission signals related to the recombination of a two-dimensional electron gas and excited holes are recognized for an Al0.23Ga0.77N/GaN single heterostructuregrown on the c-plane FS-GaN substrate.

S. F. Chichibu; K. Hazu; Y. Ishikawa; M. Tashiro; H. Namita; S. Nagao; K. Fujito; A. Uedono

2012-01-01T23:59:59.000Z

377

Polarization charges and polarization-induced barriers in AlxGa1xNGaN and InyGa1yNGaN heterostructures  

E-Print Network [OSTI]

N?GaN heterostructures L. Jia,a) E. T. Yu, D. Keogh, and P. M. Asbeck Department of Electrical and Computer EngineeringGa1 yN surrounded by n-GaN, capacitance­ voltage profiling studies combined with elementary will most likely require further improvements in p-type GaN conduc- tivity and fabrication of low-resistance

Yu, Edward T.

378

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Atlanta, GA Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA October 7, 2013 - 3:16pm Addthis Energy on My Mind / FUPWG / Atlanta, GA / May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta, Georgia Tuesday, May 2, 2006 5:00 - 6:30 Steering Committee meeting in the Danube Tigris Room 6:30 until... Networking dinner at the Marriott Wednesday, May 3, 2006 7:45 am Registration/Continental Breakfast 8:30 - 8:45 Welcome from Suzanne Sitherwood, SVP, Southern Operations, President, Atlanta Gas Light, Chattanooga Gas & Florida City Gas 8:45 - 9:00 FEMP Southeast Regional Office Welcome Traci Leath, FEMP 9:00 - 9:45 Washington Update David McAndrew, FEMP 9:45 - 10:15 Break - Networking 10:15 - 11:20 Navy Technical Program Update Paul Kistler, U.S. Navy

379

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780...

380

Lattice vibrations of pure and doped GaSe  

SciTech Connect (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

GaAs solar cells close to the thermodynamic limit  

Science Journals Connector (OSTI)

The efficiency of GaAs solar cells can be increased by applying angularly selective filters. It is shown in terms of detailed balance model, why this happens and the concept is proven...

Hoehn, Oliver; Kraus, Tobias; Bauhuis, Gerard; Schwarz, Ulrich T; Blsi, Benedikt

382

Transverse acoustic actuation of Ni-Mn-Ga single crystals  

E-Print Network [OSTI]

Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

Simon, Jesse Matthew

2007-01-01T23:59:59.000Z

383

Modeling of InGaN/Si tandem solar cells  

Science Journals Connector (OSTI)

We investigate theoretically the characteristics of monolithic InGaN/Si two-junction series-connected solar cells using the air mass 1.5 global irradiance spectrum. The addition of an InGaN junction is found to produce significant increases in the energy conversion efficiency of the solar cell over that of one-junction Si cells. Even when Si is not of high quality such two-junction cells could achieve efficiencies high enough to be practically feasible. We also show that further though smaller improvements of the efficiency can be achieved by adding another junction to form an InGaN/InGaN/Si three-junction cell.

L. Hsu; W. Walukiewicz

2008-01-01T23:59:59.000Z

384

Exciton front propagation in photoexcited GaAs quantum wells  

E-Print Network [OSTI]

We report on the study of spatiotemporal self-organization of carriers in photoexcited GaAs quantum wells. Propagating interfaces between electron-rich and hole-rich regions are seen as expanding and collapsing exciton ...

Yang, Sen

385

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents [OSTI]

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

386

Homogeneous AlGaN/GaN superlattices grown on free-standing (1100) GaN substrates by plasma-assisted molecular beam epitaxy  

SciTech Connect (OSTI)

Two-dimensional and homogeneous growth of m-plane AlGaN by plasma-assisted molecular beam epitaxy has been realized on free-standing (1100) GaN substrates by implementing high metal-to-nitrogen (III/N) flux ratio. AlN island nucleation, often reported for m-plane AlGaN under nitrogen-rich growth conditions, is suppressed at high III/N flux ratio, highlighting the important role of growth kinetics for adatom incorporation. The homogeneity and microstructure of m-plane AlGaN/GaN superlattices are assessed via a combination of scanning transmission electron microscopy and high resolution transmission electron microscopy (TEM). The predominant defects identified in dark field TEM characterization are short basal plane stacking faults (SFs) bounded by either Frank-Shockley or Frank partial dislocations. In particular, the linear density of SFs is approximately 5 10{sup ?5} cm{sup ?1}, and the length of SFs is less than 15 nm.

Shao, Jiayi; Malis, Oana [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Zakharov, Dmitri N. [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)] [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States); Edmunds, Colin [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States)] [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, Michael J. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 49707 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 49707 (United States)

2013-12-02T23:59:59.000Z

387

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy  

Science Journals Connector (OSTI)

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular- ... (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as ... back surface field la...

Shulong Lu; Lian Ji; Wei He; Pan Dai; Hui Yang

2011-10-01T23:59:59.000Z

388

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect (OSTI)

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

389

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network [OSTI]

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

390

The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers  

E-Print Network [OSTI]

have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

391

PROPOSED MODIFICATION TO THE ACI 318-02 CODE EQUATION ON BOND STRENGTH FOR MMFX STEEL  

E-Print Network [OSTI]

ST-263-1 PROPOSED MODIFICATION TO THE ACI 318-02 CODE EQUATION ON BOND STRENGTH FOR MMFX STEEL R the bond characteristics of Micro-composite Multi-structural Formable reinforcing steel rebars of the current equation of the ACI 318-02 Code on bond to predict the bond capacity of the MMFX steel rebars

392

A new hydrogen-bonding potential for the design of proteinRNA interactions predicts specific  

E-Print Network [OSTI]

A new hydrogen-bonding potential for the design of protein­RNA interactions predicts specific-dependent hydrogen-bonding potential based on the statistical analysis of hydrogen-bonding geometries of hydrogen-bonding atom pairs at protein­ nucleic acid interfaces. A scoring function based on the hydrogen

Baker, David

393

Hydrogen Bond Migration between Molecular Sites Observed with Ultrafast 2D IR Chemical Exchange Spectroscopy  

E-Print Network [OSTI]

Hydrogen Bond Migration between Molecular Sites Observed with Ultrafast 2D IR Chemical ExchangeVed: January 12, 2010 Hydrogen-bonded complexes between phenol and phenylacetylene are studied using ultrafast hydrogen bonding acceptor sites (phenyl or acetylene) that compete for hydrogen bond donors in solution

Fayer, Michael D.

394

The C OH O hydrogen bond: A determinant of stability and specificity  

E-Print Network [OSTI]

recovered by hydro- gen bond formation, so hydrogen bonds provide a small or even unfavorable net energy hydro- gen bond has been unclear and its interaction energy has been believed to be small. Recently that apparent carbon hydro- gen bonds cluster frequently at glycine-, serine-, and threonine-rich packing

Senes, Alessandro

395

Time-Resolved Study of Bonding in Liquid Carbon  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Time-Resolved Study of Bonding in Liquid Carbon Print Time-Resolved Study of Bonding in Liquid Carbon Print We are accustomed to observing carbon in its elemental form as a solid, ranging from the soft "lead" in pencils to the precious gemstone in diamond rings. While considerable attention has been focused on solid forms of carbon, the properties of liquid carbon are much more difficult to measure accurately. The very strong bonding between carbon atoms that gives diamonds their hardness also makes carbon very difficult to melt, requiring temperatures above 5000 K at pressures above 100 bar. Maintaining such conditions in a laboratory is a challenge that has hampered efforts to fully understand the chemical bonding properties of this biologically, industrially, and environmentally important element. At the ALS, researchers have found a way to rapidly heat a carbon sample and contain the resulting liquid long enough to perform picosecond time-resolved x-ray absorption spectroscopy. The technique provides a way to measure the bonding properties of liquid carbon at near-solid densities that can then be compared with results from molecular dynamics simulations.

396

Time-Resolved Study of Bonding in Liquid Carbon  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Time-Resolved Study of Bonding in Liquid Carbon Print Time-Resolved Study of Bonding in Liquid Carbon Print We are accustomed to observing carbon in its elemental form as a solid, ranging from the soft "lead" in pencils to the precious gemstone in diamond rings. While considerable attention has been focused on solid forms of carbon, the properties of liquid carbon are much more difficult to measure accurately. The very strong bonding between carbon atoms that gives diamonds their hardness also makes carbon very difficult to melt, requiring temperatures above 5000 K at pressures above 100 bar. Maintaining such conditions in a laboratory is a challenge that has hampered efforts to fully understand the chemical bonding properties of this biologically, industrially, and environmentally important element. At the ALS, researchers have found a way to rapidly heat a carbon sample and contain the resulting liquid long enough to perform picosecond time-resolved x-ray absorption spectroscopy. The technique provides a way to measure the bonding properties of liquid carbon at near-solid densities that can then be compared with results from molecular dynamics simulations.

397

Time-Resolved Study of Bonding in Liquid Carbon  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Time-Resolved Study of Bonding in Liquid Carbon Print Time-Resolved Study of Bonding in Liquid Carbon Print We are accustomed to observing carbon in its elemental form as a solid, ranging from the soft "lead" in pencils to the precious gemstone in diamond rings. While considerable attention has been focused on solid forms of carbon, the properties of liquid carbon are much more difficult to measure accurately. The very strong bonding between carbon atoms that gives diamonds their hardness also makes carbon very difficult to melt, requiring temperatures above 5000 K at pressures above 100 bar. Maintaining such conditions in a laboratory is a challenge that has hampered efforts to fully understand the chemical bonding properties of this biologically, industrially, and environmentally important element. At the ALS, researchers have found a way to rapidly heat a carbon sample and contain the resulting liquid long enough to perform picosecond time-resolved x-ray absorption spectroscopy. The technique provides a way to measure the bonding properties of liquid carbon at near-solid densities that can then be compared with results from molecular dynamics simulations.

398

From an insulating to a superfluid pair-bond liquid  

Science Journals Connector (OSTI)

We study an exchange coupled system of itinerant electrons and localized fermion pairs resulting in a resonant pairing formation. This system inherently contains resonating fermion pairs on bonds that lead to a superconducting phase, provided that long-range phase coherence between their constituents can be established. The prerequisite is that the resonating fermion pairs can become itinerant. This is rendered possible through the emergence of two kinds of bond fermions: individual and composite fermions made of one individual electron attached to a bound pair on a bond. If the strength of the exchange coupling exceeds a certain value, then the superconducting ground state undergoes a quantum phase transition into an insulating pair-bond liquid state. The gap of the superfluid phase thereby goes over continuously into a charge gap of the insulator. The changeover from the superconducting to the insulating phase is accompanied by a corresponding qualitative modification of the dispersion of the two kinds of fermionic excitations. Using a bond operator formalism, we derive the phase diagram of such a scenario together with the elementary excitations characterizing the various phases as a function of the exchange coupling and the temperature.

M. Cuoco and J. Ranninger

2006-09-20T23:59:59.000Z

399

New Insights into Hydrogen Bonding and Stacking Interactions in Cellulose  

SciTech Connect (OSTI)

In this quantum chemical study, we explore hydrogen bonding (H-bonding) and stacking interactions in different crystalline cellulose allomorphs, namely cellulose I and cellulose IIII. We consider a model system representing a cellulose crystalline core, made from six cellobiose units arranged in three layers with two chains per layer. We calculate the contributions of intrasheet and intersheet interactions to the structure and stability in both cellulose I and cellulose IIII crystalline cores. Reference structures for this study were generated from molecular dynamics simulations of water-solvated cellulose I and IIII fibrils. A systematic analysis of various conformations describing different mutual orientations of cellobiose units is performed using the hybrid density functional theory (DFT) with the M06-2X with 6-31+G (d, p) basis sets. We dissect the nature of the forces that stabilize the cellulose I and cellulose IIII crystalline cores and quantify the relative strength of H-bonding and stacking interactions. Our calculations demonstrate that individual H-bonding interactions are stronger in cellulose I than in cellulose IIII. We also observe a significant contribution from cooperative stacking interactions to the stabilization of cellulose I . In addition, the theory of atoms-in-molecules (AIM) has been employed to characterize and quantify these intermolecular interactions. AIM analyses highlight the role of nonconventional CH O H-bonding in the cellulose assemblies. Finally, we calculate molecular electrostatic potential maps for the cellulose allomorphs that capture the differences in chemical reactivity of the systems considered in our study.

Langan, Paul [ORNL

2011-01-01T23:59:59.000Z

400

Microscopic identification of the compensation mechanisms in Si-doped GaAs  

Science Journals Connector (OSTI)

The compensation mechanisms of SiGa donors in GaAs are determined by scanning tunneling microscopy. With increasing Si concentration the SiGa donors are consecutively electrically deactivated by SiAs acceptors, Si clusters, and SiGa-Ga-vacancy complexes. A microscopic model based on the screened Coulomb interaction between charged dopants, the amphoteric nature of Si, and the Fermi-level effect is proposed. It explains the observed defects, the critical Si concentrations of each identified mechanism, and predicts the solubility limit of Si in GaAs. 1996 The American Physical Society.

C. Domke, Ph. Ebert, M. Heinrich, and K. Urban

1996-10-15T23:59:59.000Z

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network [OSTI]

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

402

Business Incentive Loans and Bonds (Georgia) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

You are here You are here Home » Business Incentive Loans and Bonds (Georgia) Business Incentive Loans and Bonds (Georgia) < Back Eligibility Agricultural Commercial Construction Developer Fuel Distributor General Public/Consumer Industrial Installer/Contractor Investor-Owned Utility Local Government Municipal/Public Utility Retail Supplier Rural Electric Cooperative Systems Integrator Transportation Utility Savings Category Alternative Fuel Vehicles Hydrogen & Fuel Cells Buying & Making Electricity Water Home Weatherization Solar Wind Maximum Rebate Unlimited but generally should not exceed 20% of the asset needs of the company's Gerogia location. Program Info State Georgia Program Type Bond Program Loan Program Provider Georgia Department of Community Affairs The Strategic Industries Loan Fund (SILF) is a program offered by the

403

Students' Interdisciplinary Reasoning about "High-Energy Bonds" and ATP  

E-Print Network [OSTI]

Students' sometimes contradictory ideas about ATP (adenosine triphosphate) and the nature of chemical bonds have been studied in the biology and chemistry education literatures, but these topics are rarely part of the introductory physics curriculum. We present qualitative data from an introductory physics course for undergraduate biology majors that seeks to build greater interdisciplinary coherence and therefore includes these topics. In these data, students grapple with the apparent contradiction between the energy released when the phosphate bond in ATP is broken and the idea that an energy input is required to break a bond. We see that students' perceptions of how each scientific discipline bounds the system of interest can influence how they justify their reasoning about a topic that crosses disciplines. This has consequences for a vision of interdisciplinary education that respects disciplinary perspectives while bringing them into interaction in ways that demonstrate consistency amongst the perspectiv...

Dreyfus, Benjamin W; Sawtelle, Vashti; Svoboda, Julia; Turpen, Chandra; Redish, Edward F

2012-01-01T23:59:59.000Z

404

Metal-bonded, carbon fiber-reinforced composites  

DOE Patents [OSTI]

Metal bonded carbon fiber-reinforced composites are disclosed in which the metal and the composite are strongly bound by (1) providing a matrix-depleted zone in the composite of sufficient depth to provide a binding site for the metal to be bonded and then (2) infiltrating the metal into the matrix-free zone to fill a substantial portion of the zone and also provide a surface layer of metal, thereby forming a strong bond between the composite and the metal. The invention also includes the metal-bound composite itself, as well as the provision of a coating over the metal for high-temperature performance or for joining to other such composites or to other substrates.

Sastri, Suri A. (Lexington, MA); Pemsler, J. Paul (Lexington, MA); Cooke, Richard A. (Framingham, MA); Litchfield, John K. (Bedford, MA); Smith, Mark B. (Ipswich, MA)

1996-01-01T23:59:59.000Z

405

Metal-bonded, carbon fiber-reinforced composites  

DOE Patents [OSTI]

Metal bonded carbon fiber-reinforced composites are disclosed in which the metal and the composite are strongly bound by (1) providing a matrix-depleted zone in the composite of sufficient depth to provide a binding site for the metal to be bonded and then (2) infiltrating the metal into the matrix-free zone to fill a substantial portion of the zone and also provide a surface layer of metal, thereby forming a strong bond between the composite and the metal. The invention also includes the metal-bound composite itself, as well as the provision of a coating over the metal for high-temperature performance or for joining to other such composites or to other substrates. 2 figs.

Sastri, S.A.; Pemsler, J.P.; Cooke, R.A.; Litchfield, J.K.; Smith, M.B.

1996-03-05T23:59:59.000Z

406

Reduction of Thermal Conductivity in Wafer-Bonded Silicon  

SciTech Connect (OSTI)

Blocks of silicon up to 3-mm thick have been formed by directly bonding stacks of thin wafer chips. These stacks showed significant reductions in the thermal conductivity in the bonding direction. In each sample, the wafer chips were obtained by polishing a commercial wafer to as thin as 36 {micro}m, followed by dicing. Stacks whose starting wafers were patterned with shallow dots showed greater reductions in thermal conductivity. Diluted-HF treatment of wafer chips prior to bonding led to the largest reduction of the effective thermal conductivity, by approximately a factor of 50. Theoretical modeling based on restricted conduction through the contacting dots and some conduction across the planar nanometer air gaps yielded fair agreement for samples fabricated without the HF treatment.

ZL Liau; LR Danielson; PM Fourspring; L Hu; G Chen; GW Turner

2006-11-27T23:59:59.000Z

407

Bond Amendment, Security Clearances - January 1, 2008 | Department of  

Broader source: Energy.gov (indexed) [DOE]

Bond Amendment, Security Clearances - January 1, 2008 Bond Amendment, Security Clearances - January 1, 2008 Bond Amendment, Security Clearances - January 1, 2008 January 1, 2008 In General.-Title III of the Intelligence Reform and Terrorism Prevention Act of 2004 (50 U.S.C. 435b) is amended by adding at the end the following new section: "SEC. 3002. SECURITY CLEARANCES; LIMITATIONS SEC. 1072. SECURITY CLEARANCES; LIMITATIONS. (a) In General.-Title III of the Intelligence Reform and Terrorism Prevention Act of 2004 (50 U.S.C. 435b) is amended by adding at the end the following new section: "SEC. 3002. SECURITY CLEARANCES; LIMITATIONS. "(a) Definitions.-In this section: "(1) Controlled substance.-The term `controlled substance' has the meaning given that term in section 102 of the Controlled Substances Act (21 U.S.C.

408

Water molecules insert into N-HCl-M hydrogen bonds while M-ClX-C halogen bonds remain intact in dihydrates of halopyridinium hexachloroplatinates  

Science Journals Connector (OSTI)

Crystals of the dihydrates of three halopyridinium hexachloroplatinate salts form networks that are propagated via N-HO and O-HCl-Pt hydrogen bonds and Pt-ClX-C halogen bonds. The water molecules can be considered to have been inserted into N-HCl-Pt hydrogen bonds anticipated in the anyhdrous form of such salts.

Zordan, F.

2004-09-15T23:59:59.000Z

409

Hydrogen Bonds in Crystals. X. The Isotope Effect and Thermal Expansion of Non-Co-Operative Hydrogen Bonds in Furoic Acid  

Science Journals Connector (OSTI)

24 April 1956 research-article Hydrogen Bonds in Crystals. X. The Isotope Effect...Thermal Expansion of Non-Co-Operative Hydrogen Bonds in Furoic Acid J. McC. Pollock...Ubbelohde Ida Woodward Thermal effects in the hydrogen bonds in crystalline furoic acid have...

1956-01-01T23:59:59.000Z

410

Intramolecular Hydrogen Bonding in Disubstituted Ethanes. A Comparison of NH,,,O-and OH,,,O-Hydrogen Bonding through Conformational Analysis of 4-Amino-4-oxobutanoate  

E-Print Network [OSTI]

Intramolecular Hydrogen Bonding in Disubstituted Ethanes. A Comparison of NH,,,O- and OH,,,O- Hydrogen Bonding through Conformational Analysis of 4-Amino-4-oxobutanoate (succinamate) and Monohydrogen 1 of amide NH,,,O- and carboxyl OH,,,O- hydrogen bonds were investigated via conformational analysis

Goddard III, William A.

411

High- and low-temperature bonding techniques for microstructures  

SciTech Connect (OSTI)

The ability to bond together two or more silicon wafers greatly expands the variety and complexity of silicon microstructures that can be designed and fabricated. At LLNL, microstructures have been used for many years as hardware in scientific experiments. The activity has recently been expanded into other areas to include microinstruments for biomedical applications and for chemical analysis. Both high temperature (1100{degrees}C) bonding techniques have been used, depending on the application. This paper discusses these applications with emphasis on the most extensive which is the fabrication of microchannel coolers for diode arrays.

Ciarlo, D.R.

1993-06-22T23:59:59.000Z

412

Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer  

SciTech Connect (OSTI)

Time-dependent responses of drain current (I{sub d}) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I{sub d} by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10{sup 12} cm{sup ?2}. When UV light is turned off at 300 K, a part of increased I{sub d} decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I{sub d} at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light.

Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H. [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan); Kachi, T. [Toyota Central R and D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Sugimoto, M. [Toyota Motor Corporation, 543 Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309 (Japan)

2013-12-04T23:59:59.000Z

413

Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well  

E-Print Network [OSTI]

Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico, New Mexico 87545 Received 26 February 2007; accepted 1 June 2007; published online 28 June 2007 intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

Jalali. Bahram

414

Growth of Core?Shell Ga?GaN Nanostructures via a Conventional Reflux Method and the Formation of Hollow GaN Spheres  

Science Journals Connector (OSTI)

Gallium nitride (GaN) is an important III?V semiconductor with a wide direct band gap of ?3.4 eV. ... LiHMDS exhibits good solubility in TOA. ... The products were collected by centrifugation twice at 7000 rpm for 2 min in hexane, isopropanol, ethanol, and then deionized water. ...

Tz-Jun Kuo; Chi-Liang Kuo; Chun-Hong Kuo; Michael H. Huang

2009-02-05T23:59:59.000Z

415

Maskless lateral epitaxial overgrowth of GaN on sapphire  

SciTech Connect (OSTI)

The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

1999-07-01T23:59:59.000Z

416

Metal contacts on ZnSe and GaN  

SciTech Connect (OSTI)

Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

Duxstad, K.J. [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering; [Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

1997-05-01T23:59:59.000Z

417

Resummed thermodynamic perturbation theory for bond cooperativity in associating fluids with small bond angles: Effects of steric hindrance and ring formation  

E-Print Network [OSTI]

In this paper we develop a thermodynamic perturbation theory for two site associating fluids which exhibit bond cooperativity. We include both steric hindrance and ring formation such that the equation of state is bond angle dependent. Here the bond angle is the angle separating the centers of the two association sites. As a test, new Monte Carlo simulations are performed, and the theory is found to accurately predict the internal energy as well as the distribution of associated clusters as a function of bond angle and bond cooperativity.

B. D. Marshall; Amin Haghmoradi; W. G. Chapman

2014-04-03T23:59:59.000Z

418

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions  

E-Print Network [OSTI]

We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity ...

Hisaka, Takayuki

419

Site-controlled fabrication of Ga nanodroplets by focused ion beam  

SciTech Connect (OSTI)

Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

Xu, Xingliang; Wang, Zhiming M., E-mail: zhmwang@gmail.com [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Wu, Jiang; Li, Handong; Zhou, Zhihua [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Xiaodong [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2014-03-31T23:59:59.000Z

420

Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN  

E-Print Network [OSTI]

. Hasama, "Subpicosecond saturation of intersubband absorption in (CdS/ZnSe)/BeTe quantum well waveguides. Cho, "Intersubband absorption at ~ 1.55 m in well- and modulation-doped GaN/AlGaN multiple quantum

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Atomic-Level Study of Melting Behavior of GaN Nanotubes. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Melting Behavior of GaN Nanotubes. Atomic-Level Study of Melting Behavior of GaN Nanotubes. Abstract: Molecular dynamics simulations with a Stillinger-Weber potential have been...

422

Electric field engineering in GaN high electron mobility transistors  

E-Print Network [OSTI]

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

423

Device-level thermal analysis of GaN-based electronics  

E-Print Network [OSTI]

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

Bagnall, Kevin Robert

2013-01-01T23:59:59.000Z

424

Structural ordering and interface morphology in symmetrically strained(GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)  

Science Journals Connector (OSTI)

In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor-phase epitaxy on (001) GaAs substrates intentionally off-oriented towards one of the nearest ?110? directions. High-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. Moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. Thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. In this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation. A semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. Two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. The same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface.

C. Giannini; L. Tapfer; Y. Zhuang; L. De Caro; T. Marschner; W. Stolz

1997-02-15T23:59:59.000Z

425

Using Qualified Energy Conservation Bonds (QECBs) to Fund a Residential  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Using Qualified Energy Conservation Bonds (QECBs) to Fund a Residential Using Qualified Energy Conservation Bonds (QECBs) to Fund a Residential Energy Efficiency Loan Program: Case Study on Saint Louis County, MO Title Using Qualified Energy Conservation Bonds (QECBs) to Fund a Residential Energy Efficiency Loan Program: Case Study on Saint Louis County, MO Publication Type Policy Brief Authors Zimring, Mark Secondary Title Clean Energy Program Policy Brief Publisher LBNL Place Published Berkeley Year of Publication 2011 Pagination 7 Date Published 06/2011 Abstract Qualified Energy Conservation Bonds (QECBs) are federally-subsidized debt instruments that enable state, tribal, and local government issuers to borrow money to fund a range of qualified energy conservation projects. QECBs offer issuers very attractive borrowing rates and long terms, and can fund low-interest energy efficiency loans for home and commercial property owners. Saint Louis County, MO recently issued over $10 million of QECBs to finance the Saint Louis County SAVES residential energy efficiency loan program. The county's experience negotiating QECB regulations and restrictions can inform future issuers.

426

Describing bond graph models of hydraulic components in Modelica  

Science Journals Connector (OSTI)

In this paper we discuss an object oriented description of bond graph models of hydraulic components by means of the unified modeling language Modelica. A library which is still under development is briefly described and models of some standard hydraulic components are given for illustration. In particular we address the modeling of hydraulic orifices.

W. Borutzky; B. Barnard; J.U. Thoma

2000-01-01T23:59:59.000Z

427

Type II halogen???halogen contacts are halogen bonds  

Science Journals Connector (OSTI)

Cl/Br/I alternative substitutions in a series of dihalophenols indicate that type I and type II halogen???halogen contacts have different chemical nature. Only the latter ones qualify as true halogen bonds, according to the recent IUPAC definition.

Metrangolo, P.

2013-12-31T23:59:59.000Z

428

Vibrational Signature of Water Molecules in Asymmetric Hydrogen Bonding Environments  

E-Print Network [OSTI]

Vibrational Signature of Water Molecules in Asymmetric Hydrogen Bonding Environments Chao Zhang contributions of each of the two hydrogen atoms to the vibrational modes 1 and 3 of water molecules the early works on the molecular structure of water, it has been accepted that a water molecule

Guidoni, Leonardo

429

Simulation of an Electrical Substation Using the Bond Graph Technique  

Science Journals Connector (OSTI)

Simulation and especially computer simulation, is a basic tool since it enables engineers to understand how systems work without actually needing to see them. They can learn how they work in different circumstances and optimize their design with considerably ... Keywords: simulation, electrical substations, elements, electricity, bond graph

Gregorio Romero; Jesus Felez; Joaquin Maroto; Jose Manuel Mera

2008-04-01T23:59:59.000Z

430

Structural and bonding trends in platinum-carbon clusters  

E-Print Network [OSTI]

. Trends in stability, Pt+-Cx binding energy, doublet-quartet excitation energy, and Pt-C bond lengths were investigated. Explanations for these patterns are provided in terms of orbital interactions and changes imposed on the carbon-chain by the metal...

Miller, Thomas F

2013-02-22T23:59:59.000Z

431

Hydrogen Bond Networks in Graphene Oxide Composite Paper: Structure and  

E-Print Network [OSTI]

a precur- sor for graphene, GO itself can be useful in flexible electronics,7 in battery electrodes,8Hydrogen Bond Networks in Graphene Oxide Composite Paper: Structure and Mechanical Properties Engineering, University of Texas, Austin, Texas 78712 I n recent years, grapheneOa single layer of carbon

432

Bonding and Electronic Properties of Ice at High Pressure  

E-Print Network [OSTI]

between the nearest oxygen atoms. All ice structures that we discussed so far are insulators. Militzer 1 Bonding and Electronic Properties of Ice at High Pressure B. Militzer Department of Earth of water ice at megabar pressure are characterized with ab initio computer simulations. The focus lies

Militzer, Burkhard

433

WHAT'S GRAPHENE? Mono or few layers of sp2 bonded  

E-Print Network [OSTI]

WHAT'S GRAPHENE? · Mono or few layers of sp2 bonded carbon atoms in a honeycomb lattice 105cm2/Vs at RT. 1 Due to its unique transport properties, graphene is suitable for implementation sampling (EOS) timeresolved spectroscopy to optically pump and THz probe exfoliated graphene ribbons (GR

Mellor-Crummey, John

434

Hydrogen Bonding Increases Packing Density in the Protein Interior  

E-Print Network [OSTI]

Hydrogen Bonding Increases Packing Density in the Protein Interior David Schell,1,2 Jerry Tsai,1 J System Health Science Center, College Station, Texas 77843-1114 ABSTRACT The contribution of hydrogen to the stability, but experimental studies show that bury- ing polar groups, especially those that are hydrogen

435

Method of preparation of bonded polyimide fuel cell package  

DOE Patents [OSTI]

Described herein are processes for fabricating microfluidic fuel cell systems with embedded components in which micron-scale features are formed by bonding layers of DuPont Kapton.TM. polyimide laminate. A microfluidic fuel cell system fabricated using this process is also described.

Morse, Jeffrey D. (Martinez, CA); Jankowski, Alan (Livermore, CA); Graff, Robert T. (Modesto, CA); Bettencourt, Kerry (Dublin, CA)

2011-04-26T23:59:59.000Z

436

Bonded labour The Dalits of Nepal are a marginalised  

E-Print Network [OSTI]

Bonded labour The Dalits of Nepal are a marginalised group of people who have suffered systematic that, while illegal, is still widespread in remote rural areas of Nepal. To meet their basic needs in their neighbour- hood. Referred to in Nepal as Haliya/ Haruwa and Charuwa, they have to plough the landlords' land

Richner, Heinz

437

Water inertial reorientation: Hydrogen bond strength and the angular potential  

E-Print Network [OSTI]

Water inertial reorientation: Hydrogen bond strength and the angular potential David E. Moilanen) The short-time orientational relaxation of water is studied by ultrafast infrared pump-probe spectroscopy with recent molecular dynamics simulations employing the simple point charge-extended water model at room

Fayer, Michael D.

438

Quantum nuclear effects on surfaces and dispersion bonded systems  

E-Print Network [OSTI]

Quantum nuclear effects on surfaces and dispersion bonded systems Erlend Davidson A dissertation all system types. In particular long range van der Waals dispersion forces and quantum nuclear effects of the art methods to include van der Waals dispersion and quantum nuclear effects on a range of well defined

Guillas, Serge

439

Resummed thermodynamic perturbation theory for bond cooperativity in associating fluids  

E-Print Network [OSTI]

We develop a resummed thermodynamic perturbation theory for bond cooperativity in associating fluids by extension of Wertheim's multi - density formalism. We specifically consider the case of an associating hard sphere with two association sites and both pairwise and triplet contributions to the energy. To test the theory we perform new monte carlo simulations. Theory and simulation are found to be in excellent agreement.

B. D. Marshall; W. G. Chapman

2013-09-18T23:59:59.000Z

440

Concept generation of dynamic systems using bond graphs  

E-Print Network [OSTI]

REPRESENTATIONS OF IMMITTANCES . . . Immittance synthesis in design Conventional immit tance synthesis techniques by Foster and Cauer Immittance synthesis with bond graphs . . . . . . . . . . . . . Example - Synthesis of two frequency absorber... . . . . . . . . . 35 . 35 . 38 . . . . . . 40 . . . . . . 49 TABLE OF CONTENTS (Continued) CHAPTER Page V PHYSICAL REPRESENTATIONS OF TRANSFER FUNCTIONS Transfer function synthesis in design . . . . . . . . . . . General procedure Conditions for passive...

Krishnan, S

1990-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Measuring Interfacial Stiffness of Adhesively-Bonded Wood  

E-Print Network [OSTI]

1 Measuring Interfacial Stiffness of Adhesively-Bonded Wood Edward A. Le FPInnovations - Engineered Wood Products Manufacturing 2665 East Mall Vancouver, BC V6T 1W5 Canada Email: Edward.Le@FPInnovations.ca John A. Nairn Wood Science & Engineering Oregon State University Corvallis, OR 97330, USA Email: John

Nairn, John A.

442

THERMAL STUDY OF A GaN-BASED HEMT A Dissertation  

E-Print Network [OSTI]

of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) under bias conditions. An experimental

Sen, Mihir

443

Substrate-dependent wetting layer formation during GaN growth: Impact on the morphology of the films  

SciTech Connect (OSTI)

We have compared epitaxial growth of GaN films on 6H-SiC(0001)-({radical}(3)x{radical}(3))R30 deg. -Ga and on (0001)-sapphire. Predeposited Ga layers were nitrided by ion beam assisted molecular beam epitaxy. Whereas on SiC the initially deposited Ga covers the substrate surface completely, on sapphire only Ga droplets are present. The different distribution of the predeposited Ga affects the morphology of GaN significantly. Scanning electron microscopy and atomic force microscopy analysis of the grown films show that the complete wetting of the SiC substrate with Ga enhances finally the size and the flatness of GaN terraces and thus the quality of the film. X-ray photoelectron spectroscopy measurements reveal that metallic Ga resides also on top of the GaN films during the growth.

Sidorenko, A.; Peisert, H.; Neumann, H.; Chasse, T. [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany); Leibniz-Institut fuer Oberflaechenmodifizierung e.V. Permoserstrasse 15, D-04318 Leipzig (Germany); Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany)

2007-08-15T23:59:59.000Z

444

Doping and isolation of GaN, InGaN and InAlN using ion implantation  

SciTech Connect (OSTI)

Both n- and p-type doping have been achieved in GaN using Si{sup +} or Mg{sup +}/P{sup +} implantation, respectively, followed annealing at {ge} 1050{degrees}C. Using proximity rapid thermal annealing (10sec) the GaN surface retains both smooth morphology and its original stoichiometry. Variable temperature Hall measurements reveal approximate energy levels of 62meV for the implanted Si and 171meV for the Mg, which are similar to their values in epitaxially grown GaN. Implant isolation of both n- and p-type GaN, and n-type In{sub 0.75}Al{sub 0.25}N with multiple energy inert species (e.g. N{sup +} or F{sup +}) produces high resistivity ({ge}10{sup 8}{omega}/{open_square}) after subsequent annealing in the range 600-700{degrees}C. Smaller increases in sheet resistance are observed for In{sub x}Ga{sup 1-x}N (x=0.33-0.75) under the same conditions due to the smaller energy bandgaps and the shallower energy levels of the damage-related states controlling the resistivity.

Pearton, S.J.; Vartuli, C.B.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States)] [and others

1995-08-01T23:59:59.000Z

445

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design  

SciTech Connect (OSTI)

The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

2000-04-25T23:59:59.000Z

446

Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer  

SciTech Connect (OSTI)

We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Universit, BP 239, 54506 Vandoeuvre (France)

2014-04-07T23:59:59.000Z

447

Novel photoaffinity ligands for the GA-receptor  

SciTech Connect (OSTI)

Previous studies from this laboratory have shown that certain N-substituted phthalimides (NSPs) exhibit GA-like activity in a range of specific bioassays and that bioactive NSPs compete with ({sup 3}H)-GA{sub 4} for soluble binding sites in cucumber homogenates. As such, these compounds may prove useful in the purification and characterization of GA receptor proteins. To this end, five azido-NSPs have been synthesized and are currently being screened for biological activity and photochemical stability. Three azido-NSPs elicit {alpha}-amylase production in barley half-seeds and stimulate tissue elongation in d{sub 5} maize, lettuce, sunflower, and soybean. Further evaluations are in progress and these data as well as the utility of these compounds as photo-affinity ligands will be discussed.

Suttle, J.C.; Hultstrand, J.F.; Tanaka, F.S. (USDA/ARS Biosciences Research Laboratory, Fargo, ND (USA))

1990-05-01T23:59:59.000Z

448

The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.  

SciTech Connect (OSTI)

Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

2012-03-01T23:59:59.000Z

449

Invited Paper GaAs/A1O photonic bandgap material fabrication and characterization  

E-Print Network [OSTI]

semiconductor crystals, photonic crystals do not occur naturally. There are, therefore, several seemingly direct bandgap semiconductors, such as GaAs, A1GaAs, InP, InGaAsP, etc., in which the radiative-dimensional photonic bandgaps for microwave and millimeter-wave radiation, and for shorter optical wavelengths in one

Zhou, Weidong

450

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a  

E-Print Network [OSTI]

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a , Guohua Li b , Jerry MP photodiodes fabricated on GaP substrate with unique drift dominated design, which can build an electric field throughout the active region by varying the doping concentration. The InP/GaP photodiodes have been grown

Woodall, Jerry M.

451

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

452

Free carrier induced spectral shift for GaAs filled metallic hole arrays  

E-Print Network [OSTI]

. Soref, and J. A. D. Alamo, "Carrier-induced change in refractive index of InP, GaAs, and InGaAsP," IEEE-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave

New Mexico, University of

453

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy  

E-Print Network [OSTI]

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy A. J. Ptak, L. J-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity

Myers, Tom

454

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

GENERAL ATOMICS GENERAL ATOMICS HOT CELL FACILITY DECONTAMINATION & DECOMMISSIONING PROJECT FINAL PROJECT CLOSEOUT REPORT prepared for GA HOT CELL D&D PROJECT CONTRACT NUMBERS DE-AC03-84SF11962 and DE-AC03-95SF20798 PBS VL-GA-0012 Approvals Prepared by: James Davis, III Date Project Manager, Oakland Environmental Programs Office Reviewed by: John Lee Date Deputy, Oakland Environmental Programs Office Approved by: Laurence McEwen Date Acting Director, Oakland Environmental Programs Office General Atomics Hot Cell Facility D&D Project Closeout Report Contents Page i CONTENTS CONTENTS.....................................................................................................................................

455

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect (OSTI)

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

456

Surface morphology and magnetic anisotropy in (Ga,Mn)As  

E-Print Network [OSTI]

Atomic Force Microscopy and Grazing incidence X-ray diffraction measurements have revealed the presence of ripples aligned along the $[1\\bar{1}0]$ direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers, with periodicity of about 50 nm in all samples that have been studied. These samples show the strong symmetry breaking uniaxial magnetic anisotropy normally observed in such materials. We observe a clear correlation between the amplitude of the surface ripples and the strength of the uniaxial magnetic anisotropy component suggesting that these ripples might be the source of such anisotropy.

S. Piano; X. Marti; A. W. Rushforth; K. W. Edmonds; R. P. Campion; O. Caha; T. U. Schulli; V. Holy; B. L. Gallagher

2010-10-01T23:59:59.000Z

457

Operating experience with a GaAs photoemission electron source  

SciTech Connect (OSTI)

We report on the development of several operating procedures that promise to make GaAs photoemission electron sources easier to construct, more reliable to operate, and more amenable to use in dynamic vacuum systems. We describe in particular a method for ''ohmically'' heating a <100> crystal of GaAs under vacuum to approximately 600 /sup 0/C. We also discuss our observations of the role of oxygen in the activation of the crystal surface, the use of continuous cesiation, and of the performance of the crystal under varying vacuum conditions.

Tang, F.C.; Lubell, M.S.; Rubin, K.; Vasilakis, A.; Eminyan, M.; Slevin, J.

1986-12-01T23:59:59.000Z

458

An investigation on reliable passivation of GaP  

E-Print Network [OSTI]

reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index... reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index...

Greaves King, Carlos A.

2012-06-07T23:59:59.000Z

459

Interband transitions in molecular?beam?epitaxial Al x Ga1?x As/GaAs  

Science Journals Connector (OSTI)

Interband transition energies for Al x Ga1?x As layers grown by molecular?beam epitaxy(MBE) techniques have been determined using the electrolyte electroreflectance (EER) technique. The observed data fit quadratic relations for E 0 E 0+?0 E 1 and E 1+?1 to describe variations of energy with composition. Although the x values were not accurately known the internal consistency of the data is excellent. Given a single bowing parameter we show that accurate values of x can be determined. The EER technique can provide x values with an accuracy better than 0.02 and information on changes in x as small as 0.002. It is thus ideally suited for studying MBE materials.

J. L. Aubel; U. K. Reddy; S. Sundaram; W. T. Beard; James Comas

1985-01-01T23:59:59.000Z

460

Ultralow damage depth by electron cyclotron resonance plasma etching of GaAs/InGaAs quantum wells  

Science Journals Connector (OSTI)

Dry etch induced damage of GaAs/InGaAs/GaAs heterostructures in an electron cyclotron resonance (ECR) argon discharge has been investigated as a function of additional radio frequency self?biasing of the sample and process pressure in argon ECR discharges. We used depth resolved photoluminescence measurements to determine the influence of the etch process on the samples. We observe a decreasing damage depth for smaller bias voltages reaching its lowest value of 1.7 nm at 20 V bias and a pressure of 0.15 Pa. For lower pressures we observe a strong increase of the damage which is attributed predominantly to high energetic vacuum ultraviolet radiation from the ECR region.

T. Bickl; B. Jacobs; J. Straka; A. Forchel

1993-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "bond comm ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

Young, N. G., E-mail: ngyoung@engineering.ucsb.edu; Farrell, R. M.; Iza, M.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Perl, E. E.; Keller, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Bowers, J. E.; Nakamura, S.; DenBaars, S. P. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2014-04-21T23:59:59.000Z

462

Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures  

SciTech Connect (OSTI)

We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel [National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101 (Philippines); Garcia, Alipio [Department of Physical Sciences, University of the Philippines, Baguio City 2600 (Philippines)

2009-06-08T23:59:59.000Z

463

Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy  

Science Journals Connector (OSTI)

The mechanisms of Ga-assisted GaAs nanowires grown by molecular beam epitaxy are addressed. The axial and radial growth rates as a function of the Ga rate and As pressure indicate that on the opposite of what is observed in thin film epitaxy, the growth rate of the nanowires is arsenic limited. As a consequence, the axial growth rate of the wires can be controlled by the As4 pressure. Additionally, due to the small As4 pressure leading to nanowire growth, the deposition on the facets is very slow, leading to a much lower radial growth rate. Finally, we present a model that is able to accurately describe the presented observations and predicts a maximum length of nontapered nanowires of 40?m.

C. Colombo; D. Spirkoska; M. Frimmer; G. Abstreiter; A. Fontcuberta i Morral

2008-04-28T23:59:59.000Z

464

Carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well structures  

Science Journals Connector (OSTI)

The carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well heterostructures have been determined as a function of the incorporated compressive strain in the (GaIn)As quantum-well layer by applying magneto-optical studies. The precise structural parameters, i.e., individual layer thicknesses, strain values, and crystalline perfection, have been determined independently by high-resolution x-ray diffraction and transmission electron microscopy. By analyzing both the allowed and forbidden optical transitions as a function of the magnetic field, detected by polarization-dependent magnetophotoluminescence excitation spectroscopy, the exciton binding energy as well as the effective in-plane electron and heavy-hole masses have been determined quantitatively as a function of strain. The theoretically predicted significant decrease of the in-plane heavy-hole mass with increasing strain has been observed. The obtained results are discussed and compared with the contradictory results reported in the literature.

M. Volk; S. Lutgen; T. Marschner; W. Stolz; E. O. Gbel; P. C. M. Christianen; J. C. Maan

1995-10-15T23:59:59.000Z

465

Determination of subband energies and 2DEG characteristics of Al{sub x}Ga{sub 1?x}N/GaN heterojunctions using variational method  

SciTech Connect (OSTI)

A physics-based model based on the variational method for analyzing the two dimensional electron gas (2DEG) characteristics of polar AlGaN/GaN heterojunctions is developed. The 2DEG carrier concentration, the first and second energy subbands, and the position of the Fermi energy level are calculated for various barrier thicknesses, Al mole fractions, background dopant concentrations, and gate voltages for gated AlGaN/GaN heterojunctions. The results are in good agreement with the data reported based on self-consistent method. Whereas the aforementioned report has dealt with specific values of Al mole fraction, barrier thickness, and unintentional doping level, the present work provides a basis for calculating the 2DEG characteristics for the full range of these parameters. Furthermore, according to the proposed model, the applicability of the triangular approximation of the quantum well in AlGaN/GaN heterojunctions is evaluated.

Manouchehri, Farzin; Valizadeh, Pouya; Kabir, M. Z., E-mail: kabir@encs.concordia.ca [Department of Electrical and Computer Engineering, Concordia University, Montreal, H3G 1M8 (Canada)

2014-03-15T23:59:59.000Z

466

InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy  

SciTech Connect (OSTI)

We investigate axial GaAs/InGaAs/GaAs heterostructures embedded in GaAs nanopillars via catalyst-free selective-area metal-organic chemical vapor deposition. Structural characterization by transmission electron microscopy with energy dispersive x-ray spectroscopy (EDS) indicates formation of axial In{sub x}Ga{sub 1-x}As (x{approx}0.20) inserts with thicknesses from 36 to 220 nm with {+-}10% variation and graded Ga:In transitions controlled by In segregation. Using the heterointerfaces as markers, the vertical growth rate is determined to increase linearly during growth. Photoluminescence from 77 to 290 K and EDS suggest the presence of strain in the shortest inserts. This capability to control the formation of axial nanopillar heterostructures is crucial for optimized device integration.

Shapiro, J. N.; Lin, A.; Wong, P. S.; Scofield, A. C.; Tu, C.; Senanayake, P. N.; Mariani, G.; Liang, B. L.; Huffaker, D. L. [Department of Electrical Engineering and California Nano-Systems Institute, University of California at Los Angeles, Los Angeles, California 90095 (United States)

2010-12-13T23:59:59.000Z

467

Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system.  

SciTech Connect (OSTI)

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a unique flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected two-dimensional (2D)-2D tunneling results, we have found additional tunneling features that are related to the one-dimensional quantum wires.

Seamons, John Andrew; Lilly, Michael Patrick; Reno, John Louis; Bielejec, Edward Salvador

2004-11-01T23:59:59.000Z

468

Structure of negatively charged muonium in n-type GaAs  

Science Journals Connector (OSTI)

Muon level-crossing resonance and muon-spin-rotation measurements on heavily doped n-type GaAs:Si and GaAs:Te show that the majority of positive muons implanted at room temperature form an isolated diamagnetic muonium center located at a high-symmetry site with Ga neighbors along the ?111? direction(s). These experiments, together with theoretical considerations, imply that negatively charged muonium is at or near the tetrahedral interstitial site with four Ga nearest-neighbor atoms. Except for zero-point energy differences, these results should model negatively charged isolated hydrogen in GaAs.

K.H. Chow; R.F. Kiefl; W.A. MacFarlane; J.W. Schneider; D.W. Cooke; M. Leon; M. Paciotti; T.L. Estle; B. Hitti; R.L. Lichti; S.F.J. Cox; C. Schwab; E.A. Davis; A. Morrobel-Sosa; L. Zavieh

1995-05-15T23:59:59.000Z

469

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density  

E-Print Network [OSTI]

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density Zhi Chen properties of in situ deposited Si3N4 /Si/p-GaAs metal-insulator-semiconductor structures have been offered by a low gate leakage technology in GaAs, such as metal insulator structures, func- tional Ga

Chen, Zhi

470

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network [OSTI]

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

Atwater, Harry

471

Role of interatomic bonding in the mechanical anisotropy and interlayer cohesion of CSH crystals  

SciTech Connect (OSTI)

Atomic scale properties of calcium silicate hydrate (CSH), the main binding phase of hardened Portland cement, are not well understood. Over a century of intense research has identified almost 50 different crystalline CSH minerals which are mainly categorized by their Ca/Si ratio. The electronic structure and interatomic bonding in four major CSH crystalline phases with structures close to those found in hardened cement are investigated via ab initio methods. Our result reveals the critical role of hydrogen bonding and importance of specifying precise locations for water molecules. Quantitative analysis of contributions from different bond types to the overall cohesion shows that while the Si-O covalent bonds dominate, the hydrogen bonding and Ca-O bonding are also very significant. Calculated results reveal the correlation between bond topology and interlayer cohesion. The overall bond order density (BOD) is found to be a more critical measure than the Ca/Si ratio in classifying different CSH crystals.

Dharmawardhana, C.C. [Department of Physics and Astronomy, University of MissouriKansas City, Kansas City, MO 64110 (United States)] [Department of Physics and Astronomy, University of MissouriKansas City, Kansas City, MO 64110 (United States); Misra, A. [Department of Civil, Environmental, and Architectural Engineering, University of Kansas, Lawrence, KS 66045 (United States)] [Department of Civil, Environmental, and Architectural Engineering, University of Kansas, Lawrence, KS 66045 (United States); Aryal, S.; Rulis, P. [Department of Physics and Astronomy, University of MissouriKansas City, Kansas City, MO 64110 (United States)] [Department of Physics and Astronomy, University of MissouriKansas City, Kansas City, MO 64110 (United States); Ching, W.Y., E-mail: ccdxz8@mail.umkc.edu [Department of Physics and Astronomy, University of MissouriKansas City, Kansas City, MO 64110 (United States)

2013-10-15T23:59:59.000Z

472

Chemical Bonding In Amorphous Si Coated-carbon Nanotube As Anodes...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Bonding In Amorphous Si Coated-carbon Nanotube As Anodes For Li ion Batteries: A XANES Study. Chemical Bonding In Amorphous Si Coated-carbon Nanotube As Anodes For Li ion...

473

Imaging Adsorbate O-H Bond Cleavage: Methanol on TiO2(110). ...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Adsorbate O-H Bond Cleavage: Methanol on TiO2(110). Imaging Adsorbate O-H Bond Cleavage: Methanol on TiO2(110). Abstract: We investigated methanol adsorption and dissociation on...

474

Experimental method to find weak bond distribution functions in a high-temperature superconductor  

Science Journals Connector (OSTI)

A simple phenomenological model of a weakly bonded superconductor is suggested. The model considers the transition from a single weak dangling bond to a disruptive two-dimensional structure in taking the IV char...

M. A. Vasyutin

2013-11-01T23:59:59.000Z

475

Hydrogen Bonding Interactions Between Ions: A Powerful Tool in Molecular Crystal Engineering  

Science Journals Connector (OSTI)

Hydrogen bonding interactions are the strongest of the non-covalent interactions and are highly directional (hence transportable and reproducible). With respect to hydrogen bonds between neutral molecules the hyd...

Dario Braga; Lucia Maini; Marco Polito

2004-01-01T23:59:59.000Z

476

Hydrogen Bonding, H-D Exchange, and Molecular Mobility in Thin...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Bonding, H-D Exchange, and Molecular Mobility in Thin Water Films on TiO2(110). Hydrogen Bonding, H-D Exchange, and Molecular Mobility in Thin Water Films on TiO2(110). Abstract:...

477

E-Print Network 3.0 - aryl-metal bond chemistry Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

metal bond chemistry Search Powered by Explorit Topic List Advanced Search Sample search results for: aryl-metal bond chemistry Page: << < 1 2 3 4 5 > >> 1 Subscriber access...

478

Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy  

SciTech Connect (OSTI)

We report on the studies of optical phonon modes in nearly defect-free GaN nanowires embedded with intrinsic InGaN quantum dots by using oblique angle transmission infrared spectroscopy. These phonon modes are dependent on the nanowire fill-factor, doping densities of the nanowires, and the presence of InGaN dots. These factors can be applied for potential phonon based photodetectors whose spectral responses can be tailored by varying a combination of these three parameters. The optical anisotropy along the growth (c-) axis of the GaN nanowire contributes to the polarization agility of such potential photodetectors.

Titus, J.; Perera, A. G. U. [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States)] [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States); Nguyen, H. P. T.; Mi, Z. [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7 (Canada)] [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7 (Canada)

2013-03-25T23:59:59.000Z

479

Bond County, Illinois: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Bond County, Illinois: Energy Resources Bond County, Illinois: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 38.902985°, -89.4742177° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":38.902985,"lon":-89.4742177,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

480

Wafer bonded virtual substrate and method for forming the same  

DOE Patents [OSTI]

A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle substrate, improving or increasing the mechanical strength of the device and handle substrates, and thinning the device substrate to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. The handle substrate is typically Si or other inexpensive common substrate material, while the optoelectronic device substrate is formed of more expensive and specialized electro-optic material. Using the methodology of the invention a wide variety of thin film electro-optic materials of high quality can be bonded to inexpensive substrates which serve as the mechanical support for an optoelectronic device layer fabricated in the thin film electro-optic material.

Atwater, Jr., Harry A. (So. Pasadena, CA); Zahler, James M. (Pasadena, CA); Morral, Anna Fontcuberta i (Paris, FR)

2007-07-03T23:59:59.000Z

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481

Characterization of Fuel-Cladding Bond Strength Using Laser Shock  

SciTech Connect (OSTI)

This paper describes new laser-based capabilities for characterization of fuel-cladding bond strength in nuclear fuels, and presents preliminary results obtained from studies on as-fabricated monolithic fuel consisting of uranium-10 wt.% molybdenum alloys clad in 6061 aluminum by hot isostatic pressing. Two complementary experimental methods are employed, laser-shock testing and laser-ultrasonic imaging. Measurements are spatially localized, non-contacting and require minimum specimen preparation, and are therefore ideally suited for applications involving radioactive materials, including irradiated materials. The theoretical principles and experimental approaches employed in characterization of nuclear fuel plates are described. The ability to measure layer thicknesses, elastic properties of the constituents, and the location and nature of laser-shock induced debonds is demonstrated, and preliminary bond strength measurement results are discussed.

James A. Smith; David L. Cottle; Barry H. Rabin

2014-04-01T23:59:59.000Z

482

Bond strength and stress measurements in thermal barrier coatings  

SciTech Connect (OSTI)

Thermal barrier coatings have been used extensively in aircraft gas turbines for more than 15 years to insulate combustors and turbine vanes from the hot gas stream. Plasma sprayed thermal barrier coatings (TBCs) provide metal temperature reductions as much as 300{degrees}F, with improvements in durability of two times or more being achieved. The introduction of TBCs deposited by electron beam physical vapor deposition (EB-PVD) processes in the last five years has provided a major improvement in durability and also enabled TBCs to be applied to turbine blades for improved engine performance. This program evaluates the bond strength of yttria stabilized zirconia coatings with MCrAlY and Pt-Al bond coats utilizing diffraction and fluorescence methods.

Gell, M.; Jordan, E.

1995-12-31T23:59:59.000Z

483

Effect of nuclear ownership on utility bond ratings and yields  

SciTech Connect (OSTI)

The major objective of this study was to test the hypothesis that investors have required an additional interest rate premium before purchasing bonds of utilities with large investments in nuclear facilities. The study required several tasks. First, the literature relating to firm bankruptcy and default was reviewed. Second, the failing financial health of the electric utility industry was assessed in terms of construction problems, the impact of federal and state regulations, and the impact of Three Mile Island. Finally, data were collected on 63 electric utilities. This allowed statistical estimation of the magnitude of the risk premium associated with utility involvement in nuclear power. The effect of this involvement on a utility's bond ratings was also examined. Multiple regression was the statistical tool used for the statistical testing and estimation.

Nesse, R.J.

1982-02-01T23:59:59.000Z

484

Performance and Reliability of Bonded Interfaces for High-Temperature Packaging (Presentation)  

SciTech Connect (OSTI)

This presentation reviews the status of the performance and reliability of bonded interfaces for high-temperature packaging.

Devoto, D.

2014-06-01T23:59:59.000Z

485

Human-animal interactions, relationships and bonds: a review and analysis of the literature  

E-Print Network [OSTI]

human-animal bond: health implications across the lifespan.H. (2012). Mental health implications of human attachment to

Hosey, Geoff; Melfi, Vicky

2014-01-01T23:59:59.000Z

486

GA103 a microprogrammable processor for online filtering  

E-Print Network [OSTI]

GA103 is a 16 bit microprogrammable processor, which emulates the PDP 11 instruction set. It is based on the Am2900 slices. It allows user- implemented microinstructions and addition of hardwired processors. It will perform online filtering tasks in the NA14 experiment at CERN, based on the reconstruction of transverse momentum of photons detected in a lead glass calorimeter. (3 refs).

Calzas, A; Danon, G

1981-01-01T23:59:59.000Z

487

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical  

E-Print Network [OSTI]

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical Higher Education: An XP Report. Epema, An Experience Report on Using Gamification in Technical Higher Education, ACM SIGCSE'14. http's not you, it's me · New ambition of GamificationU (Top-20 Eng/Tech*) ·

Iosup, Alexandru

488

Response of GaAs to fast intense laser pulses  

E-Print Network [OSTI]

Motivated by recent experiments, we have performed simulations which show in detail how the electrons and ions in GaAs respond to fast intense laser pulses (with durations of order 100 fs and intensities of order 1-10 TW/cm(2)). The method of tight...

Graves, JS; Allen, Roland E.

1998-01-01T23:59:59.000Z

489

Recombination in Low-Bandgap InGaAs  

SciTech Connect (OSTI)

We review our investigation of recombination in In{sub x}Ga{sub 1-x}As with indium concentrations ranging between x=0.53 (i.e., lattice-matched to InP) and x=0.78. External radiative efficiency measurements were used to study how defect-related and Auger mechanisms compete with radiative recombination. The results indicated that deep mid-gap levels facilitate defect-related recombination in lattice-matched InGaAs while shallower levels play a more important role in the indium-rich alloys. Subsequent sub-bandgap photoluminescence measurements confirmed the presence of deep levels in the lattice-matched InGaAs. The superlinear excitation dependence of the sub-gap emission led to a defect-related deep-donor/shallow-acceptor pair model. Recent cathodoluminescence measurements of the subgap transitions show no spatial contrast, supporting the assignment of this mechanism to evenly distributed point defects. We hypothesize that the deep states observed in lattice-matched InGaAs are related to imperfections in the incorporation of indium or gallium, which become less likely as the indium concentration is increased.

Gfroerer, T. H.; Wanlass, M. W.

2006-01-01T23:59:59.000Z

490

High-quality InP on GaAs  

E-Print Network [OSTI]

In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

Quitoriano, Nathaniel Joseph

2006-01-01T23:59:59.000Z

491

MOCVD Growth of AlGaInN for UV Emitters  

SciTech Connect (OSTI)

Issues related to the growth of nitride-based UV emitters are investigated in this work. More than 100 times of improved in the optical efficiency of the GaN active region can be attained with a combination of raising the growth pressure and introducing a small amount of indium. The unique issue in the UV emitter concerning the use of AlGaN for confinement and the associated tensile cracking is also investigated. They showed that the quaternary AlGaInN is potentially capable of providing confinement to GaN and GaN:In active regions while maintaining lattice matching to GaN, unlike the AlGaN ternary system.

Crawford, Mary; Han, Jung

1999-07-07T23:59:59.000Z

492

Flip chip electrical interconnection by selective electroplating and bonding  

E-Print Network [OSTI]

on a glass substrate made of 500/2000 A° of Cr/Au with 3150 lm in length and 10 lm in width. Two silicon. The interconnection chip has 102 Cr/Au interconnection lines with 3150 lm in length and 10 lm in width. The bonding pads on the ends of the interconnection lines are 40 lm by 40 lm. A 0.8 lm thick layer of aluminum

Lin, Liwei

493

Compacting Plastic-Bonded Explosive Molding Powders to Dense Solids  

SciTech Connect (OSTI)

Dense solid high explosives are made by compacting plastic-bonded explosive molding powders with high pressures and temperatures for extended periods of time. The density is influenced by manufacturing processes of the powders, compaction temperature, the magnitude of compaction pressure, pressure duration, and number of repeated applications of pressure. The internal density variation of compacted explosives depends on method of compaction and the material being compacted.

B. Olinger

2005-04-15T23:59:59.000Z

494

Quantum Confinement in Hydrogen Bond of DNA and RNA  

E-Print Network [OSTI]

The hydrogen bond is a fundamental ingredient to stabilize the DNA and RNA macromolecules. The main contribution of this work is to describe quantitatively this interaction as a consequence of the quantum confinement of the hydrogen. The results for the free and confined system are compared with experimental data. The formalism to compute the energy gap of the vibration motion used to identify the spectrum lines is the Variational Method allied to Supersymmetric Quantum Mechanics.

Santos, da Silva dos; Ricotta, Regina Maria

2015-01-01T23:59:59.000Z

495

A Very Short Ruthenium(II) - Nitrogen Heterocycle Bond  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Very Short Ruthenium(II) - Nitrogen Heterocycle Bond: The Crystal Very Short Ruthenium(II) - Nitrogen Heterocycle Bond: The Crystal Structures of Pentaammine(N-methylpyrazinium)ruthenium(II) Iodide and Pentaammine(N-methylpyrazinium)ruthenium(III) p-Toluenesulfonate Pentahydrate James F. Wishart, Avi Bino and Henry Taube Inorg. Chem. 25, 3318-3321 (1986) Abstract: The crystal structures of [(NH3)5Ru(NC4H4NCH3)] I3 and [(NH3)5Ru(NC4H4NCH3)] (CH3C6H4SO3)4°5H2O have been solved to weighted R factors of 0.053 and 0.083, respectively. For the former structure, the space group is Pmma with a = 10.655(2)Å, b = 7.704(1)Å, c = 21.488(3)Å, and Z = 4. The Ru(II)-N(Mepyz) distance of 1.95(1)Å in this complex is the shortest yet reported for a ruthenium(II) to heteroctclic nitrogen bond. A difference of 0.04(1)Å between the cis (2.122(7)Å and 2.136(8)Å) and

496

Vacuum fusion bonded glass plates having microstructures thereon  

DOE Patents [OSTI]

An improved apparatus and method for vacuum fusion bonding of large, patterned glass plates. One or both glass plates are patterned with etched features such as microstructure capillaries and a vacuum pumpout moat, with one plate having at least one hole therethrough for communication with a vacuum pumpout fixture. High accuracy alignment of the plates is accomplished by a temporary clamping fixture until the start of the fusion bonding heat cycle. A complete, void-free fusion bond of seamless, full-strength quality is obtained through the plates; because the glass is heated well into its softening point and because of a large, distributed force that is developed that presses the two plates together from the difference in pressure between the furnace ambient (high pressure) and the channeling and microstructures in the plates (low pressure) due to the vacuum drawn. The apparatus and method may be used to fabricate microcapillary arrays for chemical electrophoresis; for example, any apparatus using a network of microfluidic channels embedded between plates of glass or similar moderate melting point substrates with a gradual softening point curve, or for assembly of glass-based substrates onto larger substrates, such as in flat panel display systems.

Swierkowski, Steve P. (Livermore, CA); Davidson, James C. (Livermore, CA); Balch, Joseph W. (Livermore, CA)

2001-01-01T23:59:59.000Z

497

Scanning white light interferometry in quality control of single-point tape automated bonding  

Science Journals Connector (OSTI)

We report on applying a scanning white light interferometry (SWLI) for quality control of aluminum lead single-point tape automated bonding (spTAB). A spTAB process was used to connect Al leads on a thin polyimide flex to Al bond pads on a flexible Al-polyimide ... Keywords: Bonding, Interferometry

Ivan Vl. Kassamakov; Henri O. Seppnen; Markku J. Oinonen; Edward O. Hggstrm; J. Mathias sterberg; Juha P. Aaltonen; Heimo Saarikko; Zoran P. Radivojevic

2007-01-01T23:59:59.000Z

498

AN INVESTIGATION OF THE BONDING AT THE CONCRETE POLYMER COMPOSITE INTERFACE  

E-Print Network [OSTI]

AN INVESTIGATION OF THE BONDING AT THE CONCRETE POLYMER COMPOSITE INTERFACE Wai How Soong, S, USA. ABSTRACT Bonding between the concrete and polymer composite (reinforcement) tendon was studied) and surface roughness of composite reinforcement tendons on the two types of bond strengths were investigated

499

Bonding in Sodium Chloride Nanotubes: A New Analysis via Madelung Constants and Cohesive Energies  

E-Print Network [OSTI]

1 Bonding in Sodium Chloride Nanotubes: A New Analysis via Madelung Constants and Cohesive Energies is introduced which employs a linear relationship between nanotube cohesive energies determined via Density between ionic and cohesive bonding energies indicate that, as the nanotubes become longer, ionic bonding

Hanusa, Christopher

500

Proton transfer reactions and hydrogen-bond networks in protein environments  

Science Journals Connector (OSTI)

...recognized that a salt bridge is a strong H-bond and plays a...pronounced in salt bridges owing to the large pK a difference for the H-bond donor and acceptor...for single-well H-bond formation is...required for salt-bridge formation, which...

2014-01-01T23:59:59.000Z