National Library of Energy BETA

Sample records for bi uup se

  1. Bi-Se doped with Cu, p-type semiconductor

    DOE Patents [OSTI]

    Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

    2013-08-20

    A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

  2. Structural phase transitions in Bi2Se3 under high pressure

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yu, Zhenhai; Gu, Genda; Wang, Lin; Hu, Qingyang; Zhao, Jinggeng; Yan, Shuai; Yang, Ke; Sinogeikin, Stanislav; Mao, Ho -kwang

    2015-11-02

    Raman spectroscopy and angle dispersive X-ray diffraction (XRD) experiments of bismuth selenide (Bi2Se3) have been carried out to pressures of 35.6 and 81.2 GPa, respectively, to explore its pressure-induced phase transformation. The experiments indicate that a progressive structural evolution occurs from an ambient rhombohedra phase (Space group (SG): R-3m) to monoclinic phase (SG: C2/m) and eventually to a high pressure body-centered tetragonal phase (SG: I4/mmm). Evidenced by our XRD data up to 81.2 GPa, the Bi2Se3 crystallizes into body-centered tetragonal structures rather than the recently reported disordered body-centered cubic (BCC) phase. Furthermore, first principles theoretical calculations favor the viewpoint thatmore » the I4/mmm phase Bi2Se3 can be stabilized under high pressure (>30 GPa). Remarkably, the Raman spectra of Bi2Se3 from this work (two independent runs) are still Raman active up to ~35 GPa. Furthermore, it is worthy to note that the disordered BCC phase at 27.8 GPa is not observed here. The remarkable difference in atomic radii of Bi and Se in Bi2Se3 may explain why Bi2Se3 shows different structural behavior than isocompounds Bi2Te3 and Sb2Te3.« less

  3. Electronic structure, irreversibility line and magnetoresistance of Cu0.3Bi2Se3 superconductor

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hemian, Yi; Gu, Genda; Chen, Chao -Yu; Sun, Xuan; Xie, Zhuo -Jin; Feng, Ya; Liang, Ai -Ji; Peng, Ying -Ying; He, Shao -Long; Zhao, Lin; et al

    2015-06-01

    CuxBi2Se3 is a superconductor that is a potential candidate for topological superconductors. We report our laser-based angle-resolved photoemission measurement on the electronic structure of the CuxBi2Se3 superconductor, and a detailed magneto-resistance measurement in both normal and superconducting states. We find that the topological surface state of the pristine Bi2Se3 topological insulator remains robust after the Cu-intercalation, while the Dirac cone location moves downward due to electron doping. Detailed measurements on the magnetic field-dependence of the resistance in the superconducting state establishes an irreversibility line and gives a value of the upper critical field at zero temperature of ~4000 Oe formore » the Cu0.3Bi2Se3 superconductor with a middle point Tc of 1.9K. The relation between the upper critical field Hc2 and temperature T is different from the usual scaling relation found in cuprates and in other kinds of superconductors. Small positive magneto-resistance is observed in Cu0.3Bi2Se3 superconductors up to room temperature. As a result, these observations provide useful information for further study of this possible candidate for topological superconductors.« less

  4. A comparative transport study of Bi{sub 2}Se{sub 3} and Bi{sub 2}Se{sub 3}/yttrium iron garnet

    SciTech Connect (OSTI)

    Jiang, Zilong; Tang, Chi; Shi, Jing; Katmis, Ferhat; Wei, Peng; Moodera, Jagadeesh S.

    2014-06-02

    Bilayers of 20 quintuple layer Bi{sub 2}Se{sub 3} on 30 nm thick yttrium iron garnet (YIG) have been grown with molecular beam epitaxy in conjunction with pulsed laser deposition. The presence of the ferri-magnetic insulator YIG causes additional scattering to the surface states of the Bi{sub 2}Se{sub 3} topological insulator layer, as indicated by the temperature dependence of the resistivity. From the two-channel analysis of the Hall data, we find that the surface contribution in the bilayer samples is greatly reduced. Furthermore, the weak antilocalization effect from the surface states is clearly suppressed due to the presence of the YIG layer.

  5. Tuning thermoelectricity in a Bi2Se3 topological insulator via varied film thickness

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Guo, Minghua; Wang, Zhenyu; Xu, Yong; Huang, Huaqing; Zang, Yunyi; Liu, Chang; Duan, Wenhui; Gan, Zhongxue; Zhang, Shou-Cheng; He, Ke; et al

    2016-01-12

    We report thermoelectric transport studies on Bi2Se3 topological insulator thin films with varied thickness grown by molecular beam epitaxy. We find that the Seebeck coefficient and thermoelectric power factor decrease systematically with the reduction of film thickness. These experimental observations can be explained quantitatively by theoretical calculations based on realistic electronic band structure of the Bi2Se3 thin films. Lastly, this work illustrates the crucial role played by the topological surface states on the thermoelectric transport of topological insulators, and sheds new light on further improvement of their thermoelectric performance.

  6. Molecular beam epitaxial growth of Bi{sub 2}Se{sub 3} nanowires and nanoflakes

    SciTech Connect (OSTI)

    Knebl, G. M. Gessler, J. R.; Kamp, M.; Höfling, S.

    2014-09-29

    Topological Insulators are in focus of immense research efforts and rapid scientific progress is obtained in that field. Bi{sub 2}Se{sub 3} has proven to be a topological insulator material that provides a large band gap and a band structure with a single Dirac cone at the Γ-point. This makes Bi{sub 2}Se{sub 3} one of the most promising three dimensional topological insulator materials. While Bi{sub 2}Se{sub 3} nanowires and nanoflakes so far were fabricated with different methods and for different purposes, we here present the first Bi{sub 2}Se{sub 3} nanowires as well as nanoflakes grown by molecular beam epitaxy. The nanostructures were nucleated on pretreated, silicon (100) wafers. Altering the growth conditions nanoflakes could be fabricated instead of nanowires; both with high crystalline quality, confirmed by scanning electron microscopy as well as transmission electron microscopy. These nanostructures have promise for spintronic devices and Majorana fermion observation in contact to superconductor materials.

  7. Experimental study of the valence band of Bi2Se3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Heremans, Joseph; Gao, Yibin; He, Bin; Androulakis, Yiannis; Parker, David S

    2014-01-01

    The valence band of Bi2Se3 is investigated with Shubnikov - de Haas measurements, galvanomagnetic and thermoelectric transport. At low hole concentration, the hole Fermi surface is closed and box-like, but at higher concentrations it develops tube-like extensions that are open. The experimentally determined density-of-states effective mass is lighter than density-functional theory calculations predict; while we cannot give a definitive explanation for this, we suspect that the theory may lack sufficient precision to compute room-temperature transport properties, such as the Seebeck coefficient, in solids in which there are Van der Waals interlayer bonds.

  8. Structural phase transitions in Bi2Se3 under high pressure

    SciTech Connect (OSTI)

    Yu, Zhenhai; Gu, Genda; Wang, Lin; Hu, Qingyang; Zhao, Jinggeng; Yan, Shuai; Yang, Ke; Sinogeikin, Stanislav; Mao, Ho -kwang

    2015-11-02

    Raman spectroscopy and angle dispersive X-ray diffraction (XRD) experiments of bismuth selenide (Bi2Se3) have been carried out to pressures of 35.6 and 81.2 GPa, respectively, to explore its pressure-induced phase transformation. The experiments indicate that a progressive structural evolution occurs from an ambient rhombohedra phase (Space group (SG): R-3m) to monoclinic phase (SG: C2/m) and eventually to a high pressure body-centered tetragonal phase (SG: I4/mmm). Evidenced by our XRD data up to 81.2 GPa, the Bi2Se3 crystallizes into body-centered tetragonal structures rather than the recently reported disordered body-centered cubic (BCC) phase. Furthermore, first principles theoretical calculations favor the viewpoint that the I4/mmm phase Bi2Se3 can be stabilized under high pressure (>30 GPa). Remarkably, the Raman spectra of Bi2Se3 from this work (two independent runs) are still Raman active up to ~35 GPa. Furthermore, it is worthy to note that the disordered BCC phase at 27.8 GPa is not observed here. The remarkable difference in atomic radii of Bi and Se in Bi2Se3 may explain why Bi2Se3 shows different structural behavior than isocompounds Bi2Te3 and Sb2Te3.

  9. Dependence of superconductivity in CuxBi?Se? on quenching conditions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Schneeloch, J. A.; Zhong, R. D.; Xu, Z. J.; Gu, G. D.; Tranquada, J. M.

    2015-04-20

    Topological superconductivity, implying gapless protected surface states, has recently been proposed to exist in the compound CuxBi?Se?. Unfortunately, low diamagnetic shielding fractions and considerable inhomogeneity have been reported in this compound. In an attempt to understand and improve on the finite superconducting volume fractions, we have investigated the effects of various growth and post-annealing conditions. With a melt-growth (MG) method, diamagnetic shielding fractions of up to 56% in Cu???Bi?Se? have been obtained, the highest value reported for this method. We investigate the efficacy of various quenching and annealing conditions, finding that quenching from temperatures above 560C is essential for superconductivity,morewhereas quenching from lower temperatures or not quenching at all is detrimental. A modified floating zone (FZ) method yielded large single crystals but little superconductivity. Even after annealing and quenching, FZ-grown samples had much less chance of being superconducting than MG-grown samples. From the low shielding fractions in FZ-grown samples and the quenching dependence, we suggest that a metastable secondary phase having a small volume fraction in most of the samples may be responsible for the superconductivity.less

  10. Time-resolved terahertz dynamics in thin films of the topological insulator Bi2Se3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Valdés Aguilar, R.; Qi, J.; Brahlek, M.; Bansal, N.; Azad, A.; Bowlan, J.; Oh, S.; Taylor, A. J.; Prasankumar, R. P.; Yarotski, D. A.

    2015-01-07

    We use optical pump–THz probe spectroscopy at low temperatures to study the hot carrier response in thin Bi2Se3 films of several thicknesses, allowing us to separate the bulk from the surface transient response. We find that for thinner films the photoexcitation changes the transport scattering rate and reduces the THz conductivity, which relaxes within 10 picoseconds (ps). For thicker films, the conductivity increases upon photoexcitation and scales with increasing both the film thickness and the optical fluence, with a decay time of approximately 5 ps as well as a much higher scattering rate. Furthermore, these different dynamics are attributed tomore » the surface and bulk electrons, respectively, and demonstrate that long-lived mobile surface photo-carriers can be accessed independently below certain film thicknesses for possible optoelectronic applications.« less

  11. Benefits of Carrier Pocket Anisotropy to Thermoelectric Performance: The case of p-type AgBiSe2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Parker, David S; May, Andrew F; Singh, David J

    2015-01-01

    We study theoretically the effects of anisotropy on the thermoelectric performance of p-type AgBiSe2. We present an apparent realization of the thermoelectric benefits of one-dimensional plate-like carrier pocket anisotropy in the valence band of this material. Based on first principles calculations we find a substantial anisotropy in the electronic structure, likely favorable for thermoelectric performance, in the valence bands of the hexagonal phase of the silver chalcogenide thermoelectric AgBiSe2, while the conduction bands are more isotropic, and in our experiments do not attain high performance. AgBiSe2 has already exhibited a ZT value of 1.5 in a high-temperature disordered fcc phase,more » but room-temperature performance has not been demonstrated. We develop a theory for the ability of anisotropy to decouple the density-of-states and conductivity effective masses, pointing out the influence of this effect in the high performance thermoelectrics Bi2Te3 and PbTe. From our first principles and Boltzmann transport calculations we find that p-type AgBiSe2 has substantial promise as a room temperature thermoelectric, and estimate its performance.« less

  12. Benefits of Carrier Pocket Anisotropy to Thermoelectric Performance: The case of p-type AgBiSe2

    SciTech Connect (OSTI)

    Parker, David S; May, Andrew F; Singh, David J

    2015-01-01

    We study theoretically the effects of anisotropy on the thermoelectric performance of p-type AgBiSe2. We present an apparent realization of the thermoelectric benefits of one-dimensional plate-like carrier pocket anisotropy in the valence band of this material. Based on first principles calculations we find a substantial anisotropy in the electronic structure, likely favorable for thermoelectric performance, in the valence bands of the hexagonal phase of the silver chalcogenide thermoelectric AgBiSe2, while the conduction bands are more isotropic, and in our experiments do not attain high performance. AgBiSe2 has already exhibited a ZT value of 1.5 in a high-temperature disordered fcc phase, but room-temperature performance has not been demonstrated. We develop a theory for the ability of anisotropy to decouple the density-of-states and conductivity effective masses, pointing out the influence of this effect in the high performance thermoelectrics Bi2Te3 and PbTe. From our first principles and Boltzmann transport calculations we find that p-type AgBiSe2 has substantial promise as a room temperature thermoelectric, and estimate its performance.

  13. Tunable inverse topological heterostructure utilizing (Bi1−xInx)2Se3 and multichannel weak-antilocalization effect

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Brahlek, Matthew J.; Koirala, Nikesh; Liu, Jianpeng; Yusufaly, Tahir I.; Salehi, Maryam; Han, Myung-Geun; Zhu, Yimei; Vanderbilt, David; Oh, Seongshik

    2016-03-10

    In typical topological insulator (TI) systems the TI is bordered by a non-TI insulator, and the surrounding conventional insulators, including vacuum, are not generally treated as part of the TI system. Here, we implement a material system where the roles are reversed, and the topological surface states form around the non-TI (instead of the TI) layers. This is realized by growing a layer of the tunable non-TI (Bi1-xInx)2Se3 in between two layers of the TI Bi2Se3 using the atomically precise molecular beam epitaxy technique. On this tunable inverse topological platform, we systematically vary the thickness and the composition of themore » (Bi1-xInx)2Se3 layer and show that this tunes the coupling between the TI layers from strongly coupled metallic to weakly coupled, and finally to a fully decoupled insulating regime. This system can be used to probe the fundamental nature of coupling in TI materials and provides a tunable insulating layer for TI devices.« less

  14. Acoustic phonon dynamics in thin-films of the topological insulator Bi{sub 2}Se{sub 3}

    SciTech Connect (OSTI)

    Glinka, Yuri D.; Babakiray, Sercan; Johnson, Trent A.; Holcomb, Mikel B.; Lederman, David

    2015-04-28

    Transient reflectivity traces measured for nanometer-sized films (6–40 nm) of the topological insulator Bi{sub 2}Se{sub 3} revealed GHz-range oscillations driven within the relaxation of hot carriers photoexcited with ultrashort (∼100 fs) laser pulses of 1.51 eV photon energy. These oscillations have been suggested to result from acoustic phonon dynamics, including coherent longitudinal acoustic phonons in the form of standing acoustic waves. An increase of oscillation frequency from ∼35 to ∼70 GHz with decreasing film thickness from 40 to 15 nm was attributed to the interplay between two different regimes employing traveling-acoustic-waves for films thicker than 40 nm and the film bulk acoustic wave resonator (FBAWR) modes for films thinner than 40 nm. The amplitude of oscillations decays rapidly for films below 15 nm thick when the indirect intersurface coupling in Bi{sub 2}Se{sub 3} films switches the FBAWR regime to that of the Lamb wave excitation. The frequency range of coherent longitudinal acoustic phonons is in good agreement with elastic properties of Bi{sub 2}Se{sub 3}.

  15. Molecular beam epitaxial growth and characterization of Bi{sub 2}Se{sub 3}/II-VI semiconductor heterostructures

    SciTech Connect (OSTI)

    Chen, Zhiyi Zhao, Lukas; Krusin-Elbaum, Lia; Garcia, Thor Axtmann; Tamargo, Maria C.; Hernandez-Mainet, Luis C.; Deng, Haiming

    2014-12-15

    Surfaces of three-dimensional topological insulators (TIs) have been proposed to host quantum phases at the interfaces with other types of materials, provided that the topological properties of interfacial regions remain unperturbed. Here, we report on the molecular beam epitaxy growth of II-VI semiconductorTI heterostructures using c-plane sapphire substrates. Our studies demonstrate that Zn{sub 0.49}Cd{sub 0.51}Se and Zn{sub 0.23}Cd{sub 0.25}Mg{sub 0.52}Se layers have improved quality relative to ZnSe. The structures exhibit a large relative upward shift of the TI bulk quantum levels when the TI layers are very thin (?6nm), consistent with quantum confinement imposed by the wide bandgap II-VI layers. Our transport measurements show that the characteristic topological signatures of the Bi{sub 2}Se{sub 3} layers are preserved.

  16. Palladium site ordering and the occurrence of superconductivity in Bi{sub 2}Pd{sub 3}Se{sub 2-x}S{sub x}

    SciTech Connect (OSTI)

    Weihrich, R.; Matar, S.F.; Anusca, I.; Pielnhofer, F.; Peter, P.; Bachhuber, F.; Eyert, V.

    2011-04-15

    The crystallographic and electronic structures of compounds related to parkerite (Bi{sub 2}Ni{sub 3}S{sub 2}) are investigated with respect to the recently reported occurrence (Bi{sub 2}Pd{sub 3}Se{sub 2}) and absence (Bi{sub 2}Pd{sub 3}S{sub 2}) of superconductivity. Similarities and differences of the crystal structures are discussed within the series of solid solutions Bi{sub 2}Pd{sub 3}S{sub 2-x}Se{sub x} from powder and single crystal diffraction data. From crystal structure refinements, the question of different structures and settings of parkerite is discussed. Similar and different 2D and 3D partial Pd-Ch (Ch=S, Se) structures are related to half antiperovskite ordering schemes. To investigate the relation of low dimensional structures and the occurrence of superconductivity, electronic structures are analyzed by scalar-relativistic DFT calculations, including site projected DOS, ECOV and Fermi surfaces. -- Graphical abstract: Structure relations for perovskite type BiPd{sub 3}C, BiPd{sub 3/2}Se and BiPd{sub 3/2}S. Display Omitted Research highlights: {yields} Merging crystallographic and electronic structures studies to understand chalcogenides related to parkerite (Bi{sub 2}Ni{sub 3}S{sub 2}). {yields} Investigation in view of recently reported occurrence (Bi{sub 2}Pd{sub 3}Se{sub 2}) and absence (Bi{sub 2}Pd{sub 3}S{sub 2}) of superconductivity. {yields} Relationship of half perovskites with perovskites.

  17. Surface collective modes in the topological insulators Bi2Se3 and Bi0.5Sb1.5Te3-xSex

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kogar, A.; Gu, G.; Vig, S.; Thaler, A.; Wong, M. H.; Xiao, Y.; Reig-i-Plessis, D.; Cho, G. Y.; Valla, T.; Pan, Z.; et al

    2015-12-15

    In this study, we used low-energy, momentum-resolved inelastic electron scattering to study surface collective modes of the three-dimensional topological insulators Bi2Se3 and Bi0.5Sb1.5Te3-xSex. Our goal was to identify the “spin plasmon” predicted by Raghu and co-workers [Phys. Rev. Lett. 104, 116401 (2010)]. Instead, we found that the primary collective mode is a surface plasmon arising from the bulk, free carriers in these materials. This excitation dominates the spectral weight in the bosonic function of the surface χ''(q,ω) at THz energy scales, and is the most likely origin of a quasiparticle dispersion kink observed in previous photoemission experiments. Our study suggestsmore » that the spin plasmon may mix with this other surface mode, calling for a more nuanced understanding of optical experiments in which the spin plasmon is reported to play a role.« less

  18. Effect of sintering in ball-milled K{sub 2}Bi{sub 8}Se{sub 13} thermoelectric nano-composites

    SciTech Connect (OSTI)

    Hatzikraniotis, E.; Ioannou, M.; Chrissafis, K.; Chung, D.Y.; Paraskevopoulos, K.M.; Kyratsi, Th.

    2012-09-15

    K{sub 2}Bi{sub 8}Se{sub 13} has many attractive features for thermoelectric applications. Recently, K{sub 2}Bi{sub 8}Se{sub 13}-based nanocomposite materials, consisting of nano-crystalline, micro-crystalline and amorphous phases, have been fabricated based on powder technology techniques. The Seebeck coefficient has been enhanced while the thermal conductivity has been decreased presenting, thus, interesting behavior. The behavior of the materials under heat treatment conditions is now of interest, as the application of sintering process is necessary for the development of thermoelectric modules. In this work, the crystallization of the K{sub 2}Bi{sub 8}Se{sub 13}-based nano-composites is studied using Differential Scanning Calorimetry. The results show that crystallization follows a multiple-step process with different activation energies. The thermoelectric properties are also discussed in the range that crystallization occurs. - Graphical Abstract: {beta}-K{sub 2}Bi{sub 8}Se{sub 13}-based nanocomposites follow a multiple-step crystallization process. Highlights: Black-Right-Pointing-Pointer K{sub 2}Bi{sub 8}Se{sub 13}-based composites consisting of nanocrystalline and amorphous phases. Black-Right-Pointing-Pointer Sintering results multiple-step crystallization with variable activation energies. Black-Right-Pointing-Pointer Thermoelectric properties follow a step-like behavior during sintering. Black-Right-Pointing-Pointer Properties are attributed to the strain relaxation, nucleation and grain growth.

  19. Electronic structure, irreversibility line and magnetoresistance of Cu0.3Bi2Se3 superconductor

    SciTech Connect (OSTI)

    Hemian, Yi; Gu, Genda; Chen, Chao -Yu; Sun, Xuan; Xie, Zhuo -Jin; Feng, Ya; Liang, Ai -Ji; Peng, Ying -Ying; He, Shao -Long; Zhao, Lin; Liu, Guo -Dong; Dong, Xiao -Li; Zhang, Jun; Chen, Chuang -Tian; Xu, Zu -Yan; Zhou, X. -J.

    2015-06-01

    CuxBi2Se3 is a superconductor that is a potential candidate for topological superconductors. We report our laser-based angle-resolved photoemission measurement on the electronic structure of the CuxBi2Se3 superconductor, and a detailed magneto-resistance measurement in both normal and superconducting states. We find that the topological surface state of the pristine Bi2Se3 topological insulator remains robust after the Cu-intercalation, while the Dirac cone location moves downward due to electron doping. Detailed measurements on the magnetic field-dependence of the resistance in the superconducting state establishes an irreversibility line and gives a value of the upper critical field at zero temperature of ~4000 Oe for the Cu0.3Bi2Se3 superconductor with a middle point Tc of 1.9K. The relation between the upper critical field Hc2 and temperature T is different from the usual scaling relation found in cuprates and in other kinds of superconductors. Small positive magneto-resistance is observed in Cu0.3Bi2Se3 superconductors up to room temperature. As a result, these observations provide useful information for further study of this possible candidate for topological superconductors.

  20. Temperature-dependent carrier–phonon coupling in topological insulator Bi{sub 2}Se{sub 3}

    SciTech Connect (OSTI)

    Lai, Yi-Ping; Liu, Jia-Ming; Chen, Hsueh-Ju; Wu, Kuang-Hsiung

    2014-12-08

    Temperature-dependent (11.0 K−294.5 K) carrier–phonon coupling in Bi{sub 2}Se{sub 3} is investigated by ultrafast pump−probe spectroscopy. The rise time of the differential reflectivity is interpreted by a combined effect of electron temperature relaxation and hot-phonon lifetime. The electron−phonon coupling constant of the bulk state (λ=0.63±0.05) is deduced from theoretical fitting. Increasing hot-phonon lifetime with decreasing temperature is attributed to a decreasing phonon−phonon collision rate. A complete analysis of the thermalization process is presented. Understanding carrier and phonon dynamics is essential for future optoelectronic and spintronic applications of topological insulators.

  1. Comparison of crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te nanocrystalline thin films: Effects of homogeneous irradiation with an electron beam

    SciTech Connect (OSTI)

    Takashiri, Masayuki, E-mail: takashiri@tokai-u.jp; Imai, Kazuo; Uyama, Masato; Nishi, Yoshitake [Department of Materials Science, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Hagino, Harutoshi; Miyazaki, Koji [Department of Mechanical and Control Engineering, Kyushu Institute of Technology, 1-1 Sensui, Tobata-ku, Kitakyushu 804-8550 (Japan); Tanaka, Saburo [Department of Mechanical Engineering, College of Engineering, Nihon University, Nakagawara, Tokusada, Tamuramachi, Koriyama, Fukushima 963-8642 (Japan)

    2014-06-07

    The effects of homogenous electron beam (EB) irradiation on the crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te thin films were investigated. Both types of thin films were prepared by flash evaporation, after which homogeneous EB irradiation was performed at an acceleration voltage of 0.17?MeV. For the n-type thin films, nanodots with a diameter of less than 10?nm were observed on the surface of rice-like nanostructures, and crystallization and crystal orientation were improved by EB irradiation. The resulting enhancement of mobility led to increased electrical conductivity and thermoelectric power factor for the n-type thin films. In contrast, the crystallization and crystal orientation of the p-type thin films were not influenced by EB irradiation. The carrier concentration increased and mobility decreased with increased EB irradiation dose, possibly because of the generation of defects. As a result, the thermoelectric power factor of p-type thin films was not improved by EB irradiation. The different crystallization behavior of the n-type and p-type thin films is attributed to atomic rearrangement during EB irradiation. Selenium in the n-type thin films is more likely to undergo atomic rearrangement than the other atoms present, so only the crystallinity of the n-type Bi-Se-Te thin films was enhanced.

  2. Optimum composition of a Bi{sub 2}Te{sub 3-x}Se{sub x} alloy for the n-type leg of a thermoelectric generator

    SciTech Connect (OSTI)

    Prokofieva, L. V. Pshenay-Severin, D. A.; Konstantinov, P. P.; Shabaldin, A. A.

    2009-08-15

    The reliability of determination of model parameters for the Bi{sub 2}Te{sub 3-x}Se{sub x} alloys is improved by extending the concentration and temperature ranges in experimental studies and, correspondingly, in calculations of kinetic coefficients based on the two-band model of the electronic spectrum. The obtained results served as a motivation for a study of the thermoelectric figure of merit for the above-mentioned alloys with x = 0.3, 0.45, and 0.6 and with the electron concentration varied in the range (1-50) x 10{sup 18} cm{sup -3} at temperatures 300-550 K. Comparison of the results showed that the highest efficiency is exhibited by the Bi{sub 2}Te{sub 2.7}Se{sub 0.3} alloy with the absolute value of the thermoelectric power of about 165 {mu}VK{sup -1} at 300 K, and the dimensionless efficiency is equal to 1.2 at 410 K. An appreciable decrease in thermal conductivity in alloys with x = 0.6 at 410 K is related to a larger band gap and could beneficially affect the figure of merit. However, the magnitude of this effect is found to be too small to compensate a decrease in electrical conductivity due to a large fraction of heavy electrons in the concentration and to a high content of selenium.

  3. Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi{sub 2}Te{sub 2}Se

    SciTech Connect (OSTI)

    Kushwaha, S. K. Gibson, Q. D.; Cava, R. J.; Xiong, J.; Ong, N. P.; Pletikosic, I.; Weber, A. P.; Fedorov, A. V.; Valla, T.

    2014-04-14

    A comparative study of the properties of topological insulator Bi{sub 2}Te{sub 2}Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8??10{sup 14}?cm{sup ?3}. Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (E{sub F}) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, which the Dirac point for the surface states lies approximately 60?meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near E{sub F}. Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed.

  4. Effect of carrier recombination on ultrafast carrier dynamics in thin films of the topological insulator Bi{sub 2}Se{sub 3}

    SciTech Connect (OSTI)

    Glinka, Yuri D.; Babakiray, Sercan; Johnson, Trent A.; Holcomb, Mikel B.; Lederman, David

    2014-10-27

    Transient reflectivity (TR) from thin films (6–40 nm thick) of the topological insulator Bi{sub 2}Se{sub 3} revealed ultrafast carrier dynamics, which suggest the existence of both radiative and non-radiative recombination between electrons residing in the upper cone of initially unoccupied high energy Dirac surface states (SS) and holes residing in the lower cone of occupied low energy Dirac SS. The modeling of measured TR traces allowed us to conclude that recombination is induced by the depletion of bulk electrons in films below ∼20 nm thick due to the charge captured on the surface defects. We predict that such recombination processes can be observed using time-resolved photoluminescence techniques.

  5. X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi{sub 2}Se{sub 3} thin films

    SciTech Connect (OSTI)

    Collins-McIntyre, L. J.; Watson, M. D.; Zhang, S. L.; Coldea, A. I.; Hesjedal, T.; Baker, A. A.; Harrison, S. E.; Pushp, A.; Kellock, A. J.; Parkin, S. S. P.; Laan, G. van der

    2014-12-15

    We report the growth of Mn-doped Bi{sub 2}Se{sub 3} thin films by molecular beam epitaxy (MBE), investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), SQUID magnetometry and x-ray magnetic circular dichroism (XMCD). Epitaxial films were deposited on c-plane sapphire substrates by co-evaporation. The films exhibit a spiral growth mechanism typical of this material class, as revealed by AFM. The XRD measurements demonstrate a good crystalline structure which is retained upon doping up to ?7.5 atomic-% Mn, determined by Rutherford backscattering spectrometry (RBS), and show no evidence of the formation of parasitic phases. However an increasing interstitial incorporation of Mn is observed with increasing doping concentration. A magnetic moment of 5.1 ?{sub B}/Mn is obtained from bulk-sensitive SQUID measurements, and a much lower moment of 1.6 ?{sub B}/Mn from surface-sensitive XMCD. At ?2.5 K, XMCD at the Mn L{sub 2,3} edge, reveals short-range magnetic order in the films and indicates ferromagnetic order below 1.5 K.

  6. Electron-phonon superconductivity in LaO{sub 0.5}F{sub 0.5}BiSe...

    Office of Scientific and Technical Information (OSTI)

    coupling for the newly discovered superconductor LaOsub 0.5Fsub 0.5BiSesub 2. ... 2, this compound is also a conventional electron-phonon coupling induced superconductor. ...

  7. Structural, electrical, and thermoelectrical properties of (Bi{sub 1-x}Sb{sub x}){sub 2}Se{sub 3} alloys prepared by a conventional melting technique

    SciTech Connect (OSTI)

    Shokr, E. Kh.; Ibrahim, E. M. M. Abdel Hakeem, A. M.; Adam, A. M.

    2013-01-15

    Polycrystalline solid solutions of (Bi{sub 1-x}Sb{sub x}){sub 2}Se{sub 3} (x = 0, 0.025, 0.050, 0.075, 0.100) were prepared using a facile method based on the conventional melting technique followed by annealing process. X-ray analysis and Raman spectroscopical measurements revealed formation of Bi{sub 2}Se{sub 3} in single phase. The electrical and thermoelectric properties have been studied on the bulk samples in the temperature range 100-420 K. The electrical conductivity measurements show that the activation energy and room-temperature electrical conductivity dependences on the Sb content respectively exhibit minimum and maximum values at x = 0.05. The thermoelectric power exhibited a maximum value near the room temperature suggesting promising materials for room-temperature applications. The highest power factor value was found to be 13.53 {mu}W K{sup -2} cm{sup -1} and recorded for the x = 0.05 compound.

  8. CsBi4Te6: A High-Performance Thermoelectric Material for Low...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    thermoelectric properties of CsBi(4)Te(6) appear to match or exceed those of Bi(2-x)Sb(x)Te(3-y)Se(y) alloys. URL: Link to article - National Center for Biotechnology Information

  9. BI\it-ï-?

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    BI\it-ï-? Ilovem?:er 1¡ !9/+8 DETECTJTOIq Otr }IEUIIIOI\ÍS I'ÍTTH s c Ï{ TIJ.,IA Tlorl c.oul'r qERq by RO]]EI¡T IIîT'STADTER Fri.ncetcn Uni¡¡ersj-t:,'r Prj¡ce't'on, lJ. J. Consultant at iirool":har,¡en t'lai;ionaL Laboratory Brooi<haven lùational Labor"atol.T fns tlumentatic¡r Ðivision Electronics and DISCLAIMER This work was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency

  10. Bi-Weekly Reports 2014

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Waste Isolation Pilot Plant Hazardous Waste Facility Permit Number: NM4890139088-TSDF Jose R. FrancoCBFO and Robert L. McQuinnNWP dated September 5, 2014 Bi-Weekly Report as...

  11. Bi-stable optical actuator

    DOE Patents [OSTI]

    Holdener, Fred R. (Tracy, CA); Boyd, Robert D. (Livermore, CA)

    2000-01-01

    The present invention is a bi-stable optical actuator device that is depowered in both stable positions. A bearing is used to transfer motion and smoothly transition from one state to another. The optical actuator device may be maintained in a stable position either by gravity or a restraining device.

  12. Midea: Order (2013-SE-1505)

    Broader source: Energy.gov [DOE]

    DOE ordered GD Midea Air-Conditioning Equipment Co. Ltd. to pay a $416,800 civil penalty after finding Midea had manufactured and distributed in commerce in the U.S. atleast 14,968 units of basic model MWJ1-08ERN1-BI8, a noncompliant room air conditioner.

  13. Materials Data on Bi2TeSe2 (SG:166) by Materials Project

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Kristin Persson

    2014-11-02

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  14. Dependence of superconductivity in CuxBi2Se3 on quenching conditions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Schneeloch, J. A.; Zhong, R. D.; Xu, Z. J.; Gu, G. D.; Tranquada, J. M.

    2015-04-20

    Topological superconductivity, implying gapless protected surface states, has recently been proposed to exist in the compound CuxBi₂Se₃. Unfortunately, low diamagnetic shielding fractions and considerable inhomogeneity have been reported in this compound. In an attempt to understand and improve on the finite superconducting volume fractions, we have investigated the effects of various growth and post-annealing conditions. With a melt-growth (MG) method, diamagnetic shielding fractions of up to 56% in Cu₀̣₃Bi₂Se₃ have been obtained, the highest value reported for this method. We investigate the efficacy of various quenching and annealing conditions, finding that quenching from temperatures above 560°C is essential for superconductivity,more » whereas quenching from lower temperatures or not quenching at all is detrimental. A modified floating zone (FZ) method yielded large single crystals but little superconductivity. Even after annealing and quenching, FZ-grown samples had much less chance of being superconducting than MG-grown samples. Thus, from the low shielding fractions in FZ-grown samples and the quenching dependence, we suggest that a metastable secondary phase having a small volume fraction in most of the samples may be responsible for the superconductivity.« less

  15. Materials Data on NaBiSe2 (SG:141) by Materials Project

    SciTech Connect (OSTI)

    Kristin Persson

    2014-11-02

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  16. Materials Data on Bi2(SeO3)3 (SG:14) by Materials Project

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Kristin Persson

    2014-11-02

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  17. Materials Data on Ni3(BiSe)2 (SG:12) by Materials Project

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Kristin Persson

    2015-02-09

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  18. Solon SE | Open Energy Information

    Open Energy Info (EERE)

    to: navigation, search Name: Solon SE Place: Berlin, Berlin, Germany Zip: D-12489 Sector: Solar Product: Manufacturer of PV modules and tracking systems, and integrator of solar...

  19. Superconducting Bi2Te: Pressure-induced universality in the (Bi2)m(Bi2Te3)n series

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Stillwell, Ryan L.; Jeffries, Jason R.; Jenei, Zsolt; Weir, Samuel T.; Vohra, Yogesh K.

    2016-03-09

    Using high-pressure magnetotransport techniques we have discovered superconductivity in Bi2Te, a member of the infinitely adaptive (Bi2)m(Bi2Te3)n series, whose end members, Bi and Bi2Te3, can be tuned to display topological surface states or superconductivity. Bi2Te has a maximum Tc = 8.6 K at P = 14.5 GPa and goes through multiple high pressure phase transitions, ultimately collapsing into a bcc structure that suggests a universal behavior across the series. High-pressure magnetoresistance and Hall measurements suggest a semi-metal to metal transition near 5.4 GPa, which accompanies the hexagonal to intermediate phase transition seen via x-ray diffraction measurements. In addition, the linearitymore » of Hc2 (T) exceeds the Werthamer-Helfand-Hohenberg limit, even in the extreme spin-orbit scattering limit, yet is consistent with other strong spin-orbit materials. Furthermore, considering these results in combination with similar reports on strong spin-orbit scattering materials seen in the literature, we suggest the need for a new theory that can address the unconventional nature of their superconducting states.« less

  20. BiOctane | Open Energy Information

    Open Energy Info (EERE)

    Product: Biofuel start-up planning to design and develop a biodiesel and ethanol refinery. References: BiOctane1 This article is a stub. You can help OpenEI by expanding it....

  1. Midea: Proposed Penalty (2013-SE-1505)

    Broader source: Energy.gov [DOE]

    DOE alleged in a Notice of Proposed Civil Penalty that GD Midea Air-Conditioning Equipment Co. Ltd. manufactured and distributed noncompliant room air conditioner basic model MWJ1-08ERN1-BI8 in the U.S.

  2. Optimization of excess Bi doping to enhance ferroic orders of spin casted BiFeO{sub 3} thin film

    SciTech Connect (OSTI)

    Gupta, Surbhi; Gupta, Vinay; Tomar, Monika; James, A. R.; Pal, Madhuparna; Guo, Ruyan; Bhalla, Amar

    2014-06-21

    Multiferroic Bismuth Ferrite (BiFeO{sub 3}) thin films with varying excess bismuth (Bi) concentration were grown by chemical solution deposition technique. Room temperature multiferroic properties (ferromagnetism, ferroelectricity, and piezoelectricity) of the deposited BiFeO{sub 3} thin films have been studied. High resolution X-ray diffraction and Raman spectroscopy studies reveal that the dominant phases formed in the prepared samples change continuously from a mixture of BiFeO{sub 3} and Fe{sub 2}O{sub 3} to pure BiFeO{sub 3} phase and, subsequently, to a mixture of BiFeO{sub 3} and Bi{sub 2}O{sub 3} with increase in the concentration of excess Bi from 0% to 15%. BiFeO{sub 3} thin films having low content (0% and 2%) of excess Bi showed the traces of ferromagnetic phase (γ-Fe{sub 2}O{sub 3}). Deterioration in ferroic properties of BiFeO{sub 3} thin films is also observed when prepared with higher content (15%) of excess Bi. Single-phased BiFeO{sub 3} thin film prepared with 5% excess Bi concentration exhibited the soft ferromagnetic hysteresis loops and ferroelectric characteristics with remnant polarization 4.2 μC/cm{sup 2} and saturation magnetization 11.66 emu/g. The switching of fine spontaneous domains with applied dc bias has been observed using piezoresponse force microscopy in BiFeO{sub 3} thin films having 5% excess Bi. The results are important to identify optimum excess Bi concentration needed for the formation of single phase BiFeO{sub 3} thin films exhibiting the improved multiferroic properties.

  3. Resources-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Resources This webpage is provided for legacy archive purposes only, as of 30 April 2015. However, the facilities and resources created under PHaSE (thanks to the support of the U.S. Department of Energy) remain available for their original purpose of investigating organic-based electronic materials. Resources As a national and regional center of excellence for energy research, PHaSE has access to many resources linked from the Department of Energy and the greater UMass Amherst campus, as well

  4. News-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    News and Highlights Saxony This page shows highlights and news items about PHaSE activities, research achievements, and people; archived items can be accessed by year at the menu to the left. If you have questions about any items, or want to know more, please contact either Tom Russell or D. Venkataraman. Final archive date: 26 April

  5. Modeling non-equilibrium phase transitions in isentropically compressed Bi

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Conference: Modeling non-equilibrium phase transitions in isentropically compressed Bi Citation Details In-Document Search Title: Modeling non-equilibrium phase transitions in isentropically compressed Bi We report here on modeling of non-equilibrium phase transitions in Bi samples isentropically compressed to 120 GPa by a ramped drive, which is produced using the Janus laser. In the experiments, the Bi samples are attached to windows of LiF or sapphire, and

  6. Superconductivity in strong spin orbital coupling compound Sb2Se3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kong, P. P.; Sun, F.; Xing, L. Y.; Zhu, J.; Zhang, S. J.; Li, W. M.; Liu, Q. Q.; Wang, X. C.; Feng, S. M.; Yu, X. H.; et al

    2014-10-20

    Recently, A2B3 type strong spin orbital coupling compounds such as Bi2Te3, Bi2Se3 and Sb2Te3 were theoretically predicated to be topological insulators and demonstrated through experimental efforts. The counterpart compound Sb2Se3 on the other hand was found to be topological trivial, but theoretical studies indicated that the pressure might induce Sb2Se3 into a topological nontrivial state. We report on the discovery of superconductivity in Sb2Se3 single crystal induced via pressure. Our experiments indicated that Sb2Se3 became superconductive at high pressures above 10 GPa proceeded by a pressure induced insulator to metal like transition at ~3 GPa which should be related tomore » the topological quantum transition. The superconducting transition temperature (TC) increased to around 8.0 K with pressure up to 40 GPa while it keeps ambient structure. As a result, high pressure Raman revealed that new modes appeared around 10 GPa and 20 GPa, respectively, which correspond to occurrence of superconductivity and to the change of TC slop as the function of high pressure in conjunction with the evolutions of structural parameters at high pressures.« less

  7. Method of producing superconducting fibers of bismuth strontium calcium copper oxide (Bi(2212) and Bi(2223))

    DOE Patents [OSTI]

    Schwartzkopf, Louis A.

    1991-10-01

    Fibers of Bi(2212) have been produce by pendant drop melt extraction. This technique involves the end of a rod of Bi(2212) melted with a hydrogen-oxygen torch, followed by lowering onto the edge of a spinning wheel. The fibers are up to 15 cm in length with the usual lateral dimensions, ranging from 20 um to 30 um. The fibers require a heat treatment to make them superconducting.

  8. Systems and methods for bi-directional energy delivery with galvanic isolation

    DOE Patents [OSTI]

    Kajouke, Lateef A.

    2013-06-18

    Systems and methods are provided for bi-directional energy delivery. A charging system comprises a first bi-directional conversion module, a second bi-directional conversion module, and an isolation module coupled between the first bi-directional conversion module and the second bi-directional conversion module. The isolation module provides galvanic isolation between the first bi-directional conversion module and the second bi-directional conversion module.

  9. I2SE | Open Energy Information

    Open Energy Info (EERE)

    I2SE Jump to: navigation, search Name: I2SE Place: Leipzig, Germany Zip: 4103 Sector: Efficiency Product: IT company providing solutions for energy efficiency and data...

  10. SE Project Srl | Open Energy Information

    Open Energy Info (EERE)

    search Name: SE Project Srl Place: San Pietro, Italy Zip: 35010 Sector: Solar Product: Italian manufacturer and supplier of solar modules and solar technology. References: SE...

  11. Green route synthesis of high quality CdSe quantum dots for applications in light emitting devices

    SciTech Connect (OSTI)

    Bera, Susnata, E-mail: susnata.bera@gmail.com [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India); Singh, Shashi B. [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India); Ray, S.K., E-mail: physkr@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)

    2012-05-15

    Investigation was made on light emitting diodes fabricated using CdSe quantum dots. CdSe quantum dots were synthesized chemically using olive oil as the capping agent, instead of toxic phosphine. Room temperature photoluminescence investigation showed sharp 1st excitonic emission peak at 568 nm. Bi-layer organic/inorganic (P3HT/CdSe) hybrid light emitting devices were fabricated by solution process. The electroluminescence study showed low turn on voltage ({approx}2.2 V) .The EL peak intensity was found to increase by increasing the operating current. - Graphical abstract: Light emitting diode was fabricated using CdSe quantum dots using olive oil as the capping agent, instead of toxic phosphine. Bi-layer organic/inorganic (P3HT/CdSe) hybrid light emitting device shows strong electroluminescence in the range 630-661 nm. Highlights: Black-Right-Pointing-Pointer CdSe Quantum dots were synthesized using olive oil as the capping agent. Black-Right-Pointing-Pointer Light emitting device was fabricated using CdSe QDs/P3HT polymer heterojunction. Black-Right-Pointing-Pointer The I-V characteristics study showed low turn on voltage at {approx}2.2 V. Black-Right-Pointing-Pointer The EL peak intensity increases with increasing the operating current.

  12. Midea: Noncompliance Determination (2013-SE-1505)

    Broader source: Energy.gov [DOE]

    DOE issued a Notice of Noncompliance Determination to GD Midea Air-Conditioning Equipment Co. Ltd. finding that Arctic King brand room air conditioner basic model MWJ1-08ERN1-BI8, manufactured by Midea, does not comport with the energy conservation standards.

  13. Process and apparatus for the production of BI-213 cations

    DOE Patents [OSTI]

    Horwitz, E. Philip; Hines, John J.; Chiarizia, Renato; Dietz, Mark

    1998-01-01

    A process for producing substantially impurity-free Bi-213 cations is disclosed. An aqueous acid feed solution containing Ac-225 cations is contacted with an ion exchange medium to bind the Ac-225 cations and form an Ac-225-laden ion exchange medium. The bound Ac-225 incubates on the ion exchange medium to form Bi-213 cations by radioactive decay. The Bi-213 cations are then recovered from the Ac-225-laden ion exchange medium to form a substantially impurity-free aqueous Bi-213 cation acid solution. An apparatus for carrying out this process is also disclosed.

  14. Process and apparatus for the production of Bi-213 cations

    DOE Patents [OSTI]

    Horwitz, E.P.; Hines, J.J.; Chiarizia, R.; Dietz, M.

    1998-12-29

    A process for producing substantially impurity-free Bi-213 cations is disclosed. An aqueous acid feed solution containing Ac-225 cations is contacted with an ion exchange medium to bind the Ac-225 cations and form an Ac-225-laden ion exchange medium. The bound Ac-225 incubates on the ion exchange medium to form Bi-213 cations by radioactive decay. The Bi-213 cations are then recovered from the Ac-225-laden ion exchange medium to form a substantially impurity-free aqueous Bi-213 cation acid solution. An apparatus for carrying out this process is also disclosed. 7 figs.

  15. Application Assessment of Bi-Level LED Parking Lot Lighting

    SciTech Connect (OSTI)

    Johnson, Megan; Cook, Tyson; Shackelford, Jordan; Pang, Terrance

    2009-02-01

    This report summarizes an assessment project conducted to evaluate light-emitting diode (LED) luminaires with bi-level operation in an outdoor parking lot application.

  16. Itinerant effects and enhanced magnetic interactions in Bi-based...

    Office of Scientific and Technical Information (OSTI)

    and enhanced magnetic interactions in Bi-based multilayer cuprates Dean, M. P. M. Brookhaven National Lab. (BNL), Upton, NY (United States). Department of Condensed Matter...

  17. Bi-Con Services Inc | Open Energy Information

    Open Energy Info (EERE)

    Services Inc Jump to: navigation, search Name: Bi-Con Services Inc Address: 10901 Clay Pike Road Place: Derwent, Ohio Zip: 43733 Sector: Buildings, Efficiency, Services Product:...

  18. Synthesis of BiOI flowerlike hierarchical structures toward photocatalytic

    Office of Scientific and Technical Information (OSTI)

    reduction of CO{sub 2} to CH{sub 4} (Journal Article) | SciTech Connect Synthesis of BiOI flowerlike hierarchical structures toward photocatalytic reduction of CO{sub 2} to CH{sub 4} Citation Details In-Document Search Title: Synthesis of BiOI flowerlike hierarchical structures toward photocatalytic reduction of CO{sub 2} to CH{sub 4} BiOI can be used for photocatalytic reduction of CO{sub 2} into hydrocarbon fuels under sunlight. - Highlights: * Room temperature synthesis of BiOI flowerlike

  19. Bi-Directional Fast Charging Study Report

    SciTech Connect (OSTI)

    Tyler Gray

    2012-02-01

    This report details the hardware and software infrastructure needed to demonstrate the possibility of utilizing battery power in plug-in hybrid electric vehicles (PHEVs) and electric vehicles (EVs) with a bi directional fast charger to support/offset peak building loads. This document fulfills deliverable requirements for Tasks 1.2.1.2, 1.2.1.3, and 1.2.1.4 of Statement of Work (SOW) No.5799 for Electric Transportation Engineering Corporation, now ECOtality North America (NA) support for the Idaho National Laboratory (INL).

  20. Bi-directional planar slide mechanism

    DOE Patents [OSTI]

    Bieg, Lothar F.

    2003-11-04

    A bi-directional slide mechanism. A pair of master and slave disks engages opposite sides of the platform. Rotational drivers are connected to master disks so the disks rotate eccentrically about their respective axes of rotation. Opposing slave disks are connected to master disks on opposite sides of the platform by a circuitous mechanical linkage, or are electronically synchronized together using stepper motors, to effect coordinated motion. The synchronized eccentric motion of the pairs of master/slave disks compels smooth linear motion of the platform forwards and backwards without backlash. The apparatus can be incorporated in a MEMS device.

  1. One step synthesis of Bi@Bi{sub 2}O{sub 3}@carboxylate-rich carbon spheres with enhanced photocatalytic performance

    SciTech Connect (OSTI)

    Qu, Lingling; Luo, Zhijun; Tang, Chao

    2013-11-15

    Graphical abstract: Functional groups of sodium gluconate play synergetic roles in the formation of Bi@Bi{sub 2}O{sub 3}@carboxylate-rich carbon coreshell nanosturctures (Bi@Bi{sub 2}O{sub 3}@CRCSs). Bi@Bi{sub 2}O{sub 3}@CRCSs exhibits significant enhanced photocatalytic activity under visible light irradiation. - Highlights: One step synthesis of Bi@Bi{sub 2}O{sub 3}@carboxylate-rich carbon spheres. Functional groups of sodium gluconate play synergetic roles in the formation of Bi@Bi{sub 2}O{sub 3}@CRCSs. Bi@Bi{sub 2}O{sub 3}@CRCSs exhibits enhanced photocatalytic activity under visible light irradiation. - Abstract: Bi@Bi{sub 2}O{sub 3}@carboxylate-rich carbon core-shell nanosturctures (Bi@Bi{sub 2}O{sub 3}@CRCSs) have been synthesized via a one-step method. The coreshell nanosturctures of the as-prepared samples were confirmed by X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and Raman spectroscopy. The formation of Bi@Bi{sub 2}O{sub 3}@CRCSs coreshell nanosturctures should attribute to the synergetic roles of different functional groups of sodium gluconate. Bi@Bi{sub 2}O{sub 3}@CRCSs exhibits significant enhanced photocatalytic activity under visible light irradiation (? > 420 nm) and shows an O{sub 2}-dependent feature. According to trapping experiments of radicals and holes, hydroxyl radicals were not the main active oxidative species in the photocatalytic degradation of MB, but O{sub 2}{sup ?} are the main active oxidative species.

  2. Advanced Precursor Reaction Processing for Cu(InGa)(SeS)2 Solar Cells

    SciTech Connect (OSTI)

    Shafarman, William N.

    2015-10-12

    This project “Advanced Precursor Reaction Processing for Cu(InGa)(SeS)2 Solar Cells”, completed by the Institute of Energy Conversion (IEC) at the University of Delaware in collaboration with the Department of Chemical Engineering at the University of Florida, developed the fundamental understanding and technology to increase module efficiency and improve the manufacturability of Cu(InGa)(SeS)2 films using the precursor reaction approach currently being developed by a number of companies. Key results included: (1) development of a three-step H2Se/Ar/H2S reaction process to control Ga distribution through the film and minimizes back contact MoSe2 formation; (2) Ag-alloying to improve precursor homogeneity by avoiding In phase agglomeration, faster reaction and improved adhesion to allow wider reaction process window; (3) addition of Sb, Bi, and Te interlayers at the Mo/precursor junction to produce more uniform precursor morphology and improve adhesion with reduced void formation in reacted films; (4) a precursor structure containing Se and a reaction process to reduce processing time to 5 minutes and eliminate H2Se usage, thereby increasing throughput and reducing costs. All these results were supported by detailed characterization of the film growth, reaction pathways, thermodynamic assessment and device behavior.

  3. The 209Bi(nth,{gamma})210Bi and 209Bi(nth,{gamma})210m,gBi Cross Sections Determined at the Budapest Neutron Centre

    SciTech Connect (OSTI)

    Borella, A.; Schillebeeckx, P.; Molnar, G.; Belgya, T.; Revay, Zs.; Szentmiklosi, L.; Berthoumieux, E.; Gunsing, F.; Letourneau, A.; Marie, F.

    2005-05-24

    The neutron total capture cross section of 209Bi together with the cross sections to the ground state and the isomeric state were determined at the cold neutron beam PGAA-NIPS facilities at the Budapest Neutron Centre. For the measurements we used a coaxial HPGe detector with Compton suppression. The partial {gamma}-ray production cross sections were deduced relative to the partial capture cross section for the 4055 keV transition following 209Bi(n,{gamma}). This partial cross section was measured with a bismuth nitrate sample with respect to nitrogen as a comparator. The total capture cross section resulting from the primary transitions is lower than the one deduced from the transitions feeding the isomeric and the ground state. Since the multipolarity of the main transition feeding the ground state is not known, the uncertainty on the capture cross section to the ground state is rather large. We also compare the total capture thermal cross section with the value deduced from resonance parameters and discuss the impact of the branching ratio on the analysis of prompt capture cross section measurements using the total energy detection principle.

  4. Extreme solid state refrigeration using nanostructured Bi-Te alloys.

    SciTech Connect (OSTI)

    Lima Sharma, Ana L.; Spataru, Dan Catalin; Medlin, Douglas L.; Sharma, Peter Anand; Morales, Alfredo Martin

    2009-09-01

    Materials are desperately needed for cryogenic solid state refrigeration. We have investigated nanostructured Bi-Te alloys for their potential use in Ettingshausen refrigeration to liquid nitrogen temperatures. These alloys form alternating layers of Bi{sub 2} and Bi{sub 2}Te{sub 3} blocks in equilibrium. The composition Bi{sub 4}Te{sub 3} was identified as having the greatest potential for having a high Ettingshausen figure of merit. Both single crystal and polycrystalline forms of this material were synthesized. After evaluating the Ettingshausen figure of merit for a large, high quality polycrystal, we simulated the limits of practical refrigeration in this material from 200 to 77 K using a simple device model. The band structure was also computed and compared to experiments. We discuss the crystal growth, transport physics, and practical refrigeration potential of Bi-Te alloys.

  5. Superconductivity in strong spin orbital coupling compound Sb2Se3

    SciTech Connect (OSTI)

    Kong, P. P.; Sun, F.; Xing, L. Y.; Zhu, J.; Zhang, S. J.; Li, W. M.; Liu, Q. Q.; Wang, X. C.; Feng, S. M.; Yu, X. H.; Zhu, J. L.; Yu, R. C.; Yang, W. G.; Shen, G. Y.; Zhao, Y. S.; Ahuja, R.; Mao, H. K.; Jin, C. Q.

    2014-10-20

    Recently, A2B3 type strong spin orbital coupling compounds such as Bi2Te3, Bi2Se3 and Sb2Te3 were theoretically predicated to be topological insulators and demonstrated through experimental efforts. The counterpart compound Sb2Se3 on the other hand was found to be topological trivial, but theoretical studies indicated that the pressure might induce Sb2Se3 into a topological nontrivial state. We report on the discovery of superconductivity in Sb2Se3 single crystal induced via pressure. Our experiments indicated that Sb2Se3 became superconductive at high pressures above 10 GPa proceeded by a pressure induced insulator to metal like transition at ~3 GPa which should be related to the topological quantum transition. The superconducting transition temperature (TC) increased to around 8.0 K with pressure up to 40 GPa while it keeps ambient structure. As a result, high pressure Raman revealed that new modes appeared around 10 GPa and 20 GPa, respectively, which correspond to occurrence of superconductivity and to the change of TC slop as the function of high pressure in conjunction with the evolutions of structural parameters at high pressures.

  6. Q Cells SE | Open Energy Information

    Open Energy Info (EERE)

    Name: Q-Cells SE Place: Thalheim, Brandenburg, Germany Zip: 6766 Product: German PV cell manufacturer; also makes strategic venture capital and corporate investments....

  7. Facilities-Resources-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Facilities Glove box photo UMass Amherst PHaSE EFRC participants and collaborators have access to the main Photovoltaic & Optical Spectroscopy Facility in Conte B523524 and its...

  8. Li2Se as a Neutron Scintillator

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Du, Mao-Hua; Shi, Hongliang; Singh, David J.

    2015-06-23

    We show that Li2Se:Te is a potential neutron scintillator material based on density functional calculations. Li2Se exhibits a number of properties favorable for efficient neutron detection, such as a high Li concentration for neutron absorption, a small effective atomic mass and a low density for reduced sensitivity to background gamma rays, and a small band gap for a high light yield. Our calculations show that Te doping should lead to the formation of deep acceptor complex VLi-TeSe, which can facilitate efficient light emission, similar to the emission activation in Te doped ZnSe.

  9. Oxidation of ultrathin GaSe

    SciTech Connect (OSTI)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  10. Oxidation of ultrathin GaSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  11. Templates-Resources-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    templates 36 inch high by 48 inch wide, landscape poster template with PHaSE acknowledgements (PPT file download) 36 inch high by 48 inch wide, landscape poster template with PHaSE acknowledgements, 12-panel layout (typical pattern used by UMass PSE) (PPT file download) 42 inch high by 48 inch wide, landscape poster template with PHaSE acknowledgements (PPT file download) 36 inch high by 48 inch wide, portrait poster template with PHaSE acknowledgements (PPT file download) 16:9 Slide Templates

  12. Improving combustion stability in a bi-fuel engine

    SciTech Connect (OSTI)

    1995-06-01

    This article describes how a new strategy for ignition timing control can reduce NOx emissions from engines using CNG and gasoline. Until a proper fueling infrastructure is established, a certain fraction of vehicles powered by compressed natural gas (CNG) must have bi-fuel capability. A bi-fuel engine, enjoying the longer range of gasoline and the cleaner emissions of CNG, can overcome the problem of having few CNG fueling stations. However, bi-fuel engines must be optimized to run on both fuels since low CNG volumetric efficiency causes power losses compared to gasoline.

  13. Behavior of intruder based states in light Bi and Tl isotopes: the study of {sup 187 Bi} {alpha} decay

    SciTech Connect (OSTI)

    Batchelder, J.C.; Zganjar, E.F.

    1997-01-01

    Intruder state excitation energies in odd-mass nuclei just outside a closed proton shell plotted versus neutron number generally exhibit parabola-shaped curves with minima near neutron mid-shells. The Bi isotopes, however, do not seem to follow this trend. Recent experiments performed at Argonne National Laboratory have identified the previously unobserved {sup 187}Bi ground state (h{sub 9/2}) to {sup 183}TI ground state s{sub 1/2} {alpha} transition. Its energy when combined with those of two earlier known transitions, namely {sup 187}Bi (h{sub 9/2}) {yields} {sup 183m}Tl (h{sub 9/2}) and {sup 187m}Bi (s{sub 1/2}) {yields} {sup 183}Tl(s{sub 1/2}), establishes the excitation energies of the {sup 183m}Tl and {sup 187m}Bi to be 620(20) keV and 110(20) keV, respectively. This value for {sup 187m}Bi is 80 keV lower than the excitation energy of the same intruder level in {sup 189}Bi. Implications of this result with respect to intruder-state systematics are discussed.

  14. Enhanced Superconducting Gaps in Trilayer High-Temperature Bi...

    Office of Scientific and Technical Information (OSTI)

    ...-Temperature Bi (2) Sr (2) Ca (2) Cu (3) O (10+delta) Cuprate Superconductor Citation Details In-Document Search Title: Enhanced Superconducting Gaps in Trilayer High-Temperature ...

  15. Melt processing of Bi--2212 superconductors using alumina

    DOE Patents [OSTI]

    Holesinger, Terry G.

    1999-01-01

    Superconducting articles and a method of forming them, where the superconducting phase of an article is Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.y (Bi-2212). Alumina is combined with Bi-2212 powder or Bi-2212 precursor powder and, in order to form an intimate mixture, the mixture is melted and rapidly cooled to form a glassy solid. The glassy solid is comminuted and the resulting powder is combined with a carrier. An alternative to melting is to form the mixture of nanophase alumina and material having a particle size of less than about 10 microns. The powder, with the carrier, is melt processed to form a superconducting article.

  16. Electrochemically deposited BiTe-based nanowires for thermoelectric applications

    SciTech Connect (OSTI)

    Ng, Inn-Khuan; Kok, Kuan-Ying; Rahman, Che Zuraini Che Ab; Saidin, Nur Ubaidah; Ilias, Suhaila Hani; Choo, Thye-Foo

    2014-02-12

    Nanostructured materials systems such as thin-films and nanowires (NWs) are promising for thermoelectric power generation and refrigeration compared to traditional counterparts in bulk, due to their enhanced thermoelectric figures-of-merit. BiTe and its derivative compounds, in particular, are well-known for their near-room temperature thermoelectric performance. In this work, both the binary and ternary BiTe-based nanowires namely, BiTe and BiSbTe, were synthesized using template-assisted electrodeposition. Diameters of the nanowires were controlled by the pore sizes of the anodised alumina (AAO) templates used. Systematic study on the compositional change as a function of applied potential was carried out via Linear Sweep Voltanmetry (LSV). Chemical compositions of the nanowires were studied using Energy Dispersive X-ray Spectrometry (EDXS) and their microstructures evaluated using diffraction and imaging techniques. Results from chemical analysis on the nanowires indicated that while the Sb content in BiSbTe nanowires increased with more negative deposition potentials, the formation of Te{sup 0} and Bi{sub 2}Te{sub 3} were favorable at more positive potentials.

  17. Contact Us-About-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    contact us The following information is for legacy archival purposes only, as of 30 April 2015! PHaSE EFRC Main Office Conte Research Center A515 (area code=413) Phone 413-577-0041, FAX 413-545-1510 Thomas P. Russell (Conte A515) Polymer Science & Engineering PHaSE EFRC Co-Director 577-1516 Paul M. Lahti (Goessmann 141) Chemistry PHaSE EFRC Co-Director 545-4890 Volodimyr Duzhko (Conte A529) Facility Director Photovoltaic Facility Director 577-0902 External Advisory Board Members Gui Bazan

  18. SE Drive Technik | Open Energy Information

    Open Energy Info (EERE)

    Drive Technik Jump to: navigation, search Name: SE Drive Technik Place: Bochum, Germany Zip: 44791 Product: Germany-based R&D subsidiary of Indian turbine maker Suzlon. References:...

  19. 2013 Archives-News-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    3 Archives Volodimyr Duzhko photo Volodimyr Duzhko promoted to (extension) Assistant Professor of Polymer Science & Engineering. PHaSE is pleased to announce that Facility Director Dr. Volodimyr Duzhko has been promoted to extension Assistant Professor of Polymer Science & Engineering. Volodimyr is a semiconductor physicist with considerable experience in polymer materials. Since joining PHaSE, he has trained over 70 people to use 10 instruments in the Photovoltaic & Optical

  20. A transferable force field for CdS-CdSe-PbS-PbSe solid systems

    SciTech Connect (OSTI)

    Fan, Zhaochuan; Vlugt, Thijs J. H.; Koster, Rik S.; Fang, Changming; Huis, Marijn A. van; Wang, Shuaiwei; Yalcin, Anil O.; Tichelaar, Frans D.; Zandbergen, Henny W.

    2014-12-28

    A transferable force field for the PbSe-CdSe solid system using the partially charged rigid ion model has been successfully developed and was used to study the cation exchange in PbSe-CdSe heteronanocrystals [A. O. Yalcin et al., Atomic resolution monitoring of cation exchange in CdSe-PbSe heteronanocrystals during epitaxial solid-solid-vapor growth, Nano Lett. 14, 36613667 (2014)]. In this work, we extend this force field by including another two important binary semiconductors, PbS and CdS, and provide detailed information on the validation of this force field. The parameterization combines Bader charge analysis, empirical fitting, and ab initio energy surface fitting. When compared with experimental data and density functional theory calculations, it is shown that a wide range of physical properties of bulk PbS, PbSe, CdS, CdSe, and their mixed phases can be accurately reproduced using this force field. The choice of functional forms and parameterization strategy is demonstrated to be rational and effective. This transferable force field can be used in various studies on II-VI and IV-VI semiconductor materials consisting of CdS, CdSe, PbS, and PbSe. Here, we demonstrate the applicability of the force field model by molecular dynamics simulations whereby transformations are initiated by cation exchange.

  1. 2011 Archives-News-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1 Archives solar cells video clip Solar Cells from Plastics? Mission Possible at the PHaSE energy research center, UMass Amherst!, a YouTube video about work at PHaSE, debuted on 24 March 2011. This video is part of our center's contributions to the Energy Frontier Research Centers Summit & Forum on 25-27 May 2011, which is further described below. Many thanks to Harihara Venkatraman (DV group, ERG 1) and Dr. Emily Pentzer (Emrick group, ERG 1) for starring in the video clip, along with

  2. Resonant Level Enhancement of the Thermoelectric Power of Bi2Te3...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Resonant Level Enhancement of the Thermoelectric Power of Bi2Te3 with Tin Resonant Level Enhancement of the Thermoelectric Power of Bi2Te3 with Tin Application to practical p-type...

  3. Design and optimization of a bi-axial vibration-driven electromagnetic...

    Office of Scientific and Technical Information (OSTI)

    Design and optimization of a bi-axial vibration-driven electromagnetic generator Citation Details In-Document Search Title: Design and optimization of a bi-axial vibration-driven ...

  4. Pressure-enhanced superconductivity in Eu 3 Bi 2 S 4 F 4 (Journal...

    Office of Scientific and Technical Information (OSTI)

    The pressure effect on the newly discovered charge-transferred BiS2-based superconductor, Eu3Bi2S4F4, with a Tc of 1.5 K at ambient pressure, is investigated by transport and ...

  5. Pressure-enhanced superconductivity in Eu 3 Bi 2 S 4 F 4 (Journal...

    Office of Scientific and Technical Information (OSTI)

    Title: Pressure-enhanced superconductivity in Eu 3 Bi 2 S 4 F 4 The pressure effect on the newly discovered charge-transferred BiS2-based superconductor, Eu3Bi2S4F4, with a Tc of ...

  6. Variation of lattice constant and cluster formation in GaAsBi

    SciTech Connect (OSTI)

    Puustinen, J.; Schramm, A.; Guina, M.; Wu, M.; Luna, E.; Laukkanen, P.; Laitinen, M.; Sajavaara, T.

    2013-12-28

    We investigate the structural properties of GaAsBi layers grown by molecular beam epitaxy on GaAs at substrate temperatures between 220315 C. Irrespective of the growth temperature, the structures exhibited similar Bi compositions, and good overall crystal quality as deduced from X-Ray diffraction measurements. After thermal annealing at temperatures as low as 500 C, the GaAsBi layers grown at the lowest temperatures exhibited a significant reduction of the lattice constant. The lattice variation was significantly larger for Bi-containing samples than for Bi-free low-temperature GaAs samples grown as a reference. Rutherford backscattering spectrometry gave no evidence of Bi diffusing out of the layer during annealing. However, dark-field and Z-contrast transmission electron microscopy analyses revealed the formation of GaAsBi clusters with a Bi content higher than in the surrounding matrix, as well as the presence of metallic As clusters. The apparent reduction of the lattice constant can be explained by a two-fold process: the diffusion of the excess As incorporated within As{sub Ga} antisites to As clusters, and the reduction of the Bi content in the GaAs matrix due to diffusion of Bi to GaAsBi clusters. Diffusion of both As and Bi are believed to be assisted by the native point defects, which are present in the low-temperature as-grown material.

  7. Anisotropy in CdSe quantum rods

    SciTech Connect (OSTI)

    Li, Liang-shi

    2003-09-01

    The size-dependent optical and electronic properties of semiconductor nanocrystals have drawn much attention in the past decade, and have been very well understood for spherical ones. The advent of the synthetic methods to make rod-like CdSe nanocrystals with wurtzite structure has offered us a new opportunity to study their properties as functions of their shape. This dissertation includes three main parts: synthesis of CdSe nanorods with tightly controlled widths and lengths, their optical and dielectric properties, and their large-scale assembly, all of which are either directly or indirectly caused by the uniaxial crystallographic structure of wurtzite CdSe. The hexagonal wurtzite structure is believed to be the primary reason for the growth of CdSe nanorods. It represents itself in the kinetic stabilization of the rod-like particles over the spherical ones in the presence of phosphonic acids. By varying the composition of the surfactant mixture used for synthesis we have achieved tight control of the widths and lengths of the nanorods. The synthesis of monodisperse CdSe nanorods enables us to systematically study their size-dependent properties. For example, room temperature single particle fluorescence spectroscopy has shown that nanorods emit linearly polarized photoluminescence. Theoretical calculations have shown that it is due to the crossing between the two highest occupied electronic levels with increasing aspect ratio. We also measured the permanent electric dipole moment of the nanorods with transient electric birefringence technique. Experimental results on nanorods with different sizes show that the dipole moment is linear to the particle volume, indicating that it originates from the non-centrosymmetric hexagonal lattice. The elongation of the nanocrystals also results in the anisotropic inter-particle interaction. One of the consequences is the formation of liquid crystalline phases when the nanorods are dispersed in solvent to a high enough concentration. The preparation of the stable liquid crystalline solution of CdSe nanorods is described, as well as the large-scale alignment of the nanorods by taking advantage of the long-range orientational correlation in the liquid crystals. In addition, we investigated the phase diagram of the nanorod solution, as a step toward understanding the possible role of the long-range attractive interaction between the nanorods in the formation of lyotropic liquid crystals.

  8. UMass-Resources-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    UMass Resources UMass logo The following links provide information about important local (UMass Amherst) campus and departmental offices and resources, including major interdepartmental research centers that pursue work closely akin to research that was initiated or expanded under PHaSE. The last four links go to sites with energy or research news of potential interest to scientists interested in organic electronic materails. Major UMass User Facilities Vice-Chancellor for Research UMass

  9. EFRC Resources-Resources-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    EFRC Resources EFRC map Last update 30 April 2015. The following links mostly provide information about accessing specialty equipment and the main instrument facilities that were created by PHaSE during 2009-2015. The last three links guide readers to information that is useful to anyone seriously interested in photovoltaics. Photovoltaic & Spectroscopy Facility Specialty Equipment for Electronic Materials Facility User Reservation Site NREL AM1.5 Solar Radiance Standard NREL Solar Cell

  10. Organization-About-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    About Mission Statement (PDF) Organization Contact Us organization This webpage is provided for legacy archive purposes only, as of 30 April 2015. The day to day operations of the University of Massachusetts Amherst PHaSE EFRC are administered by co-directors. Russell is the Samuel Conte Distingushed Professor of Polymer Science and Engineering, with years of previous experience at IBM Research, over 620 publications and 21 patents for polymer chemistry and physics. Lahti has over 29 years at

  11. 2010 Archives-News-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    0 Archives PHaSE welcomes Dr. Lawrence Friedman as our new Managing Director. Larry comes to us with strong backgrounds in both academic and industrial experience. He is well acquainted with UMass Amherst from his time at Bayer Materials Science, where he was much involved in doctoral level recruiting and in academic/industrial liaison work as Head of University Relations. Before this, he was at Polaroid doing work in flims research as a manager and senior scientist. His academic credentials

  12. 2013 Archives-News-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4 Archives PHaSE EFRC work was featured in an MRS-TV video production, UMASS Amherst -- Optimal Design: Interdisciplinary Teamwork from Synthesis to Production, that was highlighted on electronic signage throughout the Fall 2014 Boston Materials Research Society meeting. Major vignettes were shown from Maroudas group, DV group, Emrick group. Both faculty and undergraduates/graduates/postdocs described EFRC work and work being carried out by closely allied groups interested in energy-related

  13. Highly efficient visible-light-induced photocatalytic activity of Bi{sub 2}WO{sub 6}/BiVO{sub 4} heterojunction photocatalysts

    SciTech Connect (OSTI)

    Chaiwichian, Saranyoo; Inceesungvorn, Burapat; Wetchakun, Khatcharin; Phanichphant, Sukon; Kangwansupamonkon, Wiyong; Wetchakun, Natda

    2014-06-01

    Highlights: Bi{sub 2}WO{sub 6}/BiVO{sub 4} heterojunction photocatalysts were obtained using hydrothermal method. Physicochemical properties played a significant role on photocatalytic efficiency. Bi{sub 2}WO{sub 6}/BiVO{sub 4} heterogeneous structures were greatly enhanced for degradation of MB. A tentative mechanism of charge transfer process in MB degradation was proposed. - Abstract: The Bi{sub 2}WO{sub 6}/BiVO{sub 4} heterojunction photocatalysts were synthesized by hydrothermal method. Physical properties of the heterojunction photocatalyst samples were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques. The XRD results indicated that BiVO{sub 4} retain monoclinic and tetragonal structures, while Bi{sub 2}WO{sub 6} presented as orthorhombic structure. The Brunauer, Emmett and Teller (BET) adsorptiondesorption of nitrogen gas for specific surface area determination at the temperature of liquid nitrogen was performed on all samples. UVvis diffuse reflectance spectra (UVvis DRS) were used to identify the absorption range and band gap energy of the heterojunction photocatalysts. The photocatalytic performance of Bi{sub 2}WO{sub 6}/BiVO{sub 4} heterojunction photocatalysts was studied via the photodegradation of methylene blue (MB) under visible light irradiation. The results indicated that the heterojunction photocatalyst at 0.5:0.5 mole ratio of Bi{sub 2}WO{sub 6}:BiVO{sub 4} shows the highest photocatalytic activity.

  14. Comparison of growth texture in round Bi2212 and flat Bi2223 wires and its relation to high critical current density development

    SciTech Connect (OSTI)

    Kametani, F.; Jiang, J.; Matras, M.; Abraimov, D.; Hellstrom, E. E.; Larbalestier, D. C.

    2015-02-10

    Why Bi₂Sr₂CaCu₂Ox (Bi2212) allows high critical current density Jc in round wires rather than only in the anisotropic tape form demanded by all other high temperature superconductors is important for future magnet applications. Here we compare the local texture of state-of-the-art Bi2212 and Bi2223 ((Bi,Pb)₂Sr₂Ca₂Cu₃O₁₀), finding that round wire Bi2212 generates a dominant a-axis growth texture that also enforces a local biaxial texture (FWHM <15°) while simultaneously allowing the c-axes of its polycrystals to rotate azimuthally along and about the filament axis so as to generate macroscopically isotropic behavior. By contrast Bi2223 shows only a uniaxial (FWHM <15°) c-axis texture perpendicular to the tape plane without any in-plane texture. Consistent with these observations, a marked, field-increasing, field-decreasing Jc(H) hysteresis characteristic of weak-linked systems appears in Bi2223 but is absent in Bi2212 round wire. Growth-induced texture on cooling from the melt step of the Bi2212 Jc optimization process appears to be the key step in generating this highly desirable microstructure.

  15. Superconductivity versus structural phase transition in the closely related Bi2Rh3.5S2 and Bi2Rh3S2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kaluarachchi, Udhara S.; Xie, Weiwei; Lin, Qisheng; Taufour, Valentin; Bud'ko, Sergey L.; Miller, Gordon J.; Canfield, Paul C.

    2015-05-19

    Single crystals of Bi2Rh3S2 and Bi2Rh3.5S2 were synthesized by solution growth, and the crystal structures and thermodynamic and transport properties of both compounds were studied. In the case of Bi2Rh3S2, a structural first-order transition at around 165 K is identified by single-crystal diffraction experiments, with clear signatures visible in resistivity, magnetization, and specific heat data. No superconducting transition for Bi2Rh3S2 was observed down to 0.5 K. In contrast, no structural phase transition at high temperature was observed for Bi2Rh3.5S2; however, bulk superconductivity with a critical temperature, Tc ≈ 1.7 K, was observed. The Sommerfeld coefficient γ and the Debye temperaturemore » (ΘD) were found to be 9.41 mJ mol–1K–2 and 209 K, respectively, for Bi2Rh3S2, and 22 mJ mol–1K–2 and 196 K, respectively, for Bi2Rh3.5S2. As a result, the study of the specific heat in the superconducting state of Bi2Rh3.5S2 suggests that Bi2Rh3.5S2 is a weakly coupled, BCS superconductor.« less

  16. Comparison of growth texture in round Bi2212 and flat Bi2223 wires and its relation to high critical current density development

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kametani, F.; Jiang, J.; Matras, M.; Abraimov, D.; Hellstrom, E. E.; Larbalestier, D. C.

    2015-02-10

    Why Bi₂Sr₂CaCu₂Ox (Bi2212) allows high critical current density Jc in round wires rather than only in the anisotropic tape form demanded by all other high temperature superconductors is important for future magnet applications. Here we compare the local texture of state-of-the-art Bi2212 and Bi2223 ((Bi,Pb)₂Sr₂Ca₂Cu₃O₁₀), finding that round wire Bi2212 generates a dominant a-axis growth texture that also enforces a local biaxial texture (FWHM <15°) while simultaneously allowing the c-axes of its polycrystals to rotate azimuthally along and about the filament axis so as to generate macroscopically isotropic behavior. By contrast Bi2223 shows only a uniaxial (FWHM <15°) c-axis texturemore » perpendicular to the tape plane without any in-plane texture. Consistent with these observations, a marked, field-increasing, field-decreasing Jc(H) hysteresis characteristic of weak-linked systems appears in Bi2223 but is absent in Bi2212 round wire. Growth-induced texture on cooling from the melt step of the Bi2212 Jc optimization process appears to be the key step in generating this highly desirable microstructure.« less

  17. 2009 Archives-News-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    09 Archives U.S. DOE Announces Energy Frontier Research Centers (08/2009) UMass Amherst EFRC Proposal (08/2009) EFRC Funding Distributed to Successful Centers (08/2009) PHaSE co-director Paul Lahti led off a set of presentations organized by the UMass Amherst Research & Liaison office to meet with a delegation of scientists from various technical research centers of the Gipuzkoa province in the Basque region of northern Spain. The delegation was organized through the Tecnalia Corporation,

  18. 2012 Archives-News-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2 Archives Tom Russell photo Joint work by Tom Russell, Alex Briseno, and coworkers describes fabrication and a significant degree of device optimization of a low band polymer pDPP/PCBM solar cell, in an article published in Advanced Materials. Photoconversion efficiency up to 5.6% with a fill factor of 60% were obtained. Morphology control based on solvent mixture tuning was critically important for best electrical output. [read more] PHaSE members D. Venkataraman and Tom Russell have edited a

  19. Haier: Compromise Agreement (2011-SE-1428) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Compromise Agreement (2011-SE-1428) Haier: Compromise Agreement (2011-SE-1428) April 23, 2013 DOE and Haier America Trading, LLC entered into a Compromise Agreement to resolve a ...

  20. SeQuential Pacific Biodiesel LLC | Open Energy Information

    Open Energy Info (EERE)

    Pacific Biodiesel LLC Jump to: navigation, search Name: SeQuential-Pacific Biodiesel LLC Place: Oregon Sector: Biofuels Product: JV between SeQuential Biofuels, Pacific Biodiesel,...

  1. LgCOOleS, Se*&,,

    Office of Legacy Management (LM)

    ; "Ofice Mem . m *" ' ' *IilCl:t Consists of & " ' / Of LgCOOleS, Se*&,, es * UNITED STATES G-OVERNM NT <;$)~~ 3i;t-j /Lj ' , ~~~' jCjC;O c) TO I LT. :s. Clnr!te, ,;or,~~~,~' , -.,,..:-:-Y"' r~-;i~.L.-Z.:r DATE: uL"C!.,?r 6, 1' ?L9 A meting mj: !1:1d in i:1CG bet,. _ ^ .- ',cel representatives 51 ;.2rshz:i sr.3 the A;.35 to nwotiztc .the prices for producing FY-1: (brow oxise), _1 I%-; (green salt and .?T-12 (he::.-iZluoriic) fcr the sc2or.d 3,uarter of

  2. Bi-harmonic cantilever design for improved measurement sensitivity in tapping-mode atomic force microscopy

    SciTech Connect (OSTI)

    Loganathan, Muthukumaran; Bristow, Douglas A.

    2014-04-15

    This paper presents a method and cantilever design for improving the mechanical measurement sensitivity in the atomic force microscopy (AFM) tapping mode. The method uses two harmonics in the drive signal to generate a bi-harmonic tapping trajectory. Mathematical analysis demonstrates that the wide-valley bi-harmonic tapping trajectory is as much as 70% more sensitive to changes in the sample topography than the standard single-harmonic trajectory typically used. Although standard AFM cantilevers can be driven in the bi-harmonic tapping trajectory, they require large forcing at the second harmonic. A design is presented for a bi-harmonic cantilever that has a second resonant mode at twice its first resonant mode, thereby capable of generating bi-harmonic trajectories with small forcing signals. Bi-harmonic cantilevers are fabricated by milling a small cantilever on the interior of a standard cantilever probe using a focused ion beam. Bi-harmonic drive signals are derived for standard cantilevers and bi-harmonic cantilevers. Experimental results demonstrate better than 30% improvement in measurement sensitivity using the bi-harmonic cantilever. Images obtained through bi-harmonic tapping exhibit improved sharpness and surface tracking, especially at high scan speeds and low force fields.

  3. Inorganic resins for clinical use of .sup.213Bi generators

    DOE Patents [OSTI]

    DePaoli, David W. (Knoxville, TN); Hu, Michael Z. (Knoxville, TN); Mirzadeh, Saed (Knoxville, TN); Clavier, John W. (Elizabethton, TN)

    2011-03-29

    Applicant's invention is a radionuclide generator resin material for radiochemical separation of daughter radionuclides, particularly .sup.213Bi, from a solution of parental radionuclides, the resin material capable of providing clinical quantities of .sup.213Bi of at least 20-mCi, wherein the resin material comprises a silica-based structure having at least one bifunctional ligand covalently attached to the surface of the silica-based structure. The bifunctional ligand comprises a chemical group having desirable surface functionality to enable the covalent attachment of the bifunctional ligand thereon the surface of the structure and the bifunctional ligand further comprises a second chemical group capable of binding and holding the parental radionuclides on the resin material while allowing the daughter radionuclides to elute off the resin material. The bifunctional ligand has a carbon chain with a limited number of carbons to maintain radiation stability of the resin material.

  4. Synthesis and optical study of green light emitting polymer coated CdSe/ZnSe core/shell nanocrystals

    SciTech Connect (OSTI)

    Tripathi, S.K.; Sharma, Mamta

    2013-05-15

    Highlights: ► Synthesis of Polymer coated core CdSe and CdSe/ZnSe core/shell NCs. ► From TEM image, the spherical nature of CdSe and CdSe/ZnSe is obtained. ► Exhibiting green band photoemission peak at 541 nm and 549 nm for CdSe core and CdSe/ZnSe core/shell NCs. ► The shell thickness has been calculated by using superposition of quantum confinement energy model. - Abstract: CdSe/ZnSe Core/Shell NCs dispersed in PVA are synthesized by chemical method at room temperature. This is characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), UV/Vis spectra and photoluminescence spectroscopy (PL). TEM image shows the spherical nature of CdSe/ZnSe core/shell NCs. The red shift of absorption and emission peak of CdSe/ZnSe core/shell NCs as compared to CdSe core confirmed the formation of core/shell. The superposition of quantum confinement energy model is used for calculation of thickness of ZnSe shell.

  5. Combined effects of Bi deficiency and Mn substitution on the structural transformation and functionality of BiFeO{sub 3} films

    SciTech Connect (OSTI)

    Chen, Jingyi; Wang, Yao Deng, Yuan

    2014-11-07

    Mn-doped BiFeO{sub 3} films with Mn contents of 5 and 10 mol. % were prepared via a chemical route. A carefully controlled amount of Bi deficiency was introduced to further tune the lattice structure and the functionality of multiferroic BiFeO{sub 3}. The crystal structure of Bi{sub 1−δ}Fe{sub 1−x}Mn{sub x}O{sub 3} films was investigated by X-ray diffraction and Raman spectra; a rhombohedral-to-orthorhombic phase transition was revealed. The observed double hysteresis loops and two capacitance maxima from polarization vs electric field and capacitance-voltage measurements indicate an antiferroelectric-like behavior. Additionally, the coexistence of ferroelectric (FE) and antiferroelectric (AFE) phases in Bi{sub 1−δ}Fe{sub 1−x}Mn{sub x}O{sub 3} films was revealed from the domain structures obtained by piezoelectric force microscopy. The effects of Mn substitution in conjunction with Bi deficiency on the FE-AFE phase transition and electrical behavior of BiFeO{sub 3} films are discussed in detail. Meanwhile, magnetic and photoluminescence measurements on the films illustrate that Mn substitution gives rise to the net magnetic moment and the defects induced by both Bi deficiency and Mn substitution influence the electronic structure of BiFeO{sub 3} films. This study thus shows a simple and effective way to control the functionalities of BiFeO{sub 3} films.

  6. Carbon quantum dots coated BiVO{sub 4} inverse opals for enhanced photoelectrochemical hydrogen generation

    SciTech Connect (OSTI)

    Nan, Feng; Shen, Mingrong; Fang, Liang E-mail: lfang@suda.edu.cn; Kang, Zhenhui E-mail: lfang@suda.edu.cn; Wang, Junling

    2015-04-13

    Carbon quantum dots (CQDs) coated BiVO{sub 4} inverse opal (io-BiVO{sub 4}) structure that shows dramatic improvement of photoelectrochemical hydrogen generation has been fabricated using electrodeposition with a template. The io-BiVO{sub 4} maximizes photon trapping through slow light effect, while maintaining adequate surface area for effective redox reactions. CQDs are then incorporated to the io-BiVO{sub 4} to further improve the photoconversion efficiency. Due to the strong visible light absorption property of CQDs and enhanced separation of the photoexcited electrons, the CQDs coated io-BiVO{sub 4} exhibit a maximum photo-to-hydrogen conversion efficiency of 0.35%, which is 6 times higher than that of the pure BiVO{sub 4} thin films. This work is a good example of designing composite photoelectrode by combining quantum dots and photonic crystal.

  7. Method And Apparatus For Production Of Bi-213 From The Activity Ac-225 Source

    DOE Patents [OSTI]

    Egorov, Oleg B.; O'Hara, Matthew J.

    2005-12-06

    A method and apparatus for isolating and purifying a .sup.213 Bi radioactive isotope from an .sup.225 Ac source using a primary column and a primary sorbent which preferentially retains .sup.225 Ac over .sup.213 Bi when exposed to a compatible solvent in combination with a secondary column having a secondary sorbent which retains .sup.213 Bi when exposed to a mixture of the compatible solvent and .sup.213 Bi. A "compatible solvent" is a solvent which will preferentially remove .sup.213 Bi radioactive isotopes from a primary sorbent without removing .sup.225 Ac radioactive isotopes, and then allow .sup.213 Bi radioactive isotopes removed from the primary sorbent to be retained on a secondary sorbent, without having to dilute or otherwise chemically or physically modify the compatible solvent in between exposure to the primary and secondary sorbents.

  8. Efficient removal rhodamine B over hydrothermally synthesized fishbone like BiVO{sub 4}

    SciTech Connect (OSTI)

    Lin, Xue; Li, Hongji; Yu, Lili; Zhao, Han; Yan, Yongsheng; Liu, Chunbo; Zhai, Hongjv

    2013-10-15

    Graphical abstract: - Highlights: Fishbone like BiVO{sub 4} product was synthesized through hydrothermal method. BiVO{sub 4} sample was characterized by various characterization technologies. Fishbone like BiVO{sub 4} presented outstanding photocatalytic performance. - Abstract: Fishbone like BiVO{sub 4} product has been successfully synthesized by a hydrothermal method without using any surfactant or template. The pH value was found to play an important role in the formation of this morphology. The band gap of the as-prepared fishbone like BiVO{sub 4} sample was estimated to be about 2.36 eV from the onset of UVvis diffuse reflectance spectrum (UVvis DRS) of the photocatalyst. The as-prepared fishbone like BiVO{sub 4} sample exhibited excellent visible-light-driven photocatalytic efficiency. Over this catalyst, the 100% degradation of rhodamine B (Rh B) (0.005 mmol L{sup ?1}) was obtained after visible light irradiation (? > 420 nm) for 180 min. This is much higher than that of bulk BiVO{sub 4} sample prepared by solid-state reaction. The reason for the differences in the photocatalytic activities of fishbone like BiVO{sub 4} sample and bulk BiVO{sub 4} sample was further investigated.

  9. SE-72/AS-72 generator system based on Se extraction/ As reextraction

    DOE Patents [OSTI]

    Fassbender, Michael Ernst; Ballard, Beau D

    2013-09-10

    The preparation of a .sup.72Se/.sup.72As radioisotope generator involves forming an acidic aqueous solution of an irradiated alkali bromide target such as a NaBr target, oxidizing soluble bromide in the solution to elemental bromine, removing the elemental bromine, evaporating the resulting solution to a residue, removing hydrogen chloride from the residue, forming an acidic aqueous solution of the residue, adding a chelator that selectively forms a chelation complex with selenium, and extracting the chelation complex from the acidic aqueous solution into an organic phase. As the .sup.72Se generates .sup.72As in the organic phase, the .sup.72As may be extracted repeatedly from the organic phase with an aqueous acid solution.

  10. MgSe/ZnSe/CdSe coupled quantum wells grown on InP substrate with intersubband absorption covering 1.55??m

    SciTech Connect (OSTI)

    Chen, Guopeng; Shen, Aidong; De Jesus, Joel; Tamargo, Maria C.

    2014-12-08

    The authors report the observation of intersubband (ISB) transitions in the optical communication wavelength region in MgSe/ZnSe/CdSe coupled quantum wells (QWs). The coupled QWs were grown on InP substrates by molecular beam epitaxy. By inserting ZnSe layers to compensate the strain, samples with high structural quality were obtained, as indicated by well resolved satellite peaks in high-resolution x-ray diffraction. The observed ISB transition energies agree well with the calculated values.

  11. SE-MA-NO Electric Coop | Open Energy Information

    Open Energy Info (EERE)

    SE-MA-NO Electric Coop Jump to: navigation, search Name: SE-MA-NO Electric Coop Place: Missouri Phone Number: (417) 924-3291 Website: www.semano.com Facebook: https:...

  12. Goodman Manufacturing: Order (2011-SE-4301) | Department of Energy

    Energy Savers [EERE]

    Goodman Manufacturing: Order (2011-SE-4301) Goodman Manufacturing: Order (2011-SE-4301) March 2, 2012 DOE ordered Goodman Manufacturing Company, L.P., to pay a $14,800 civil penalty after finding Goodman had manufactured and distributed in commerce in the U.S. at least 74 units of commercial package air conditioner basic model CPC180*. PDF icon Goodman Manufacturing: Order (2011-SE-4301) More Documents & Publications Goodman Manufacturing: Proposed Penalty (2011-SE-4301) Goodman

  13. Perlick: Order (2013-SE-14001) | Department of Energy

    Energy Savers [EERE]

    Order (2013-SE-14001) Perlick: Order (2013-SE-14001) May 14, 2015 DOE ordered Perlick Corporation to pay a $168,200 civil penalty after finding Perlick had manufactured and distributed in commerce in the U.S. 841 units of basic model HP24F, a noncompliant freezer. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and Perlick. PDF icon Perlick: Order (2013-SE-14001) More Documents & Publications Perlick: Proposed Penalty (2013-SE-14001) Perlick: Order

  14. Morris: Order (2013-SE-5403) | Department of Energy

    Energy Savers [EERE]

    Order (2013-SE-5403) Morris: Order (2013-SE-5403) July 21, 2015 DOE ordered Morris Products, Inc. to pay a $170,720 civil penalty after finding Morris had manufactured and distributed in commerce in the U.S. a large quantity of noncompliant metal halide lamp fixtures. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and Morris. PDF icon Morris: Order (2013-SE-5403) More Documents & Publications Morris: Proposed Penalty (2013-SE-5403) Morris:

  15. Bi-Directional DC-DC Converter for PHEV Applications

    SciTech Connect (OSTI)

    Abas Goodarzi

    2011-01-31

    Plug-In Hybrid Electric Vehicles (PHEV) require high power density energy storage system (ESS) for hybrid operation and high energy density ESS for Electric Vehicle (EV) mode range. However, ESS technologies to maximize power density and energy density simultaneously are not commercially feasible. The use of bi-directional DC-DC converter allows use of multiple energy storage, and the flexible DC-link voltages can enhance the system efficiency and reduce component sizing. This will improve fuel consumption, increase the EV mode range, reduce the total weight, reduce battery initial and life cycle cost, and provide flexibility in system design.

  16. Experience with Bi-Fuel LPG Pickups in Texas

    SciTech Connect (OSTI)

    Whalen, P.

    1999-05-12

    The State of Texas requires state agencies to purchase alternative fuel vehicles (AFVs). In 1996, Texas Department of Transportation (TxDOT) representatives added about 400 bi-fuel liquefied petroleum gas (LPG) pickup trucks to their fleet. The fleet managers were willing to share information about their fleets and the operation of these vehicles, so a study was launched to collect operations, maintenance, and cost data for selected LPG and gasoline vehicles (as controls) throughout 18 months of vehicle operation. This case study presents the results of that data collection and its subsequent analysis.

  17. Wide emission-tunable CdTeSe/ZnSe/ZnS core-shell quantum dots...

    Office of Scientific and Technical Information (OSTI)

    Title: Wide emission-tunable CdTeSeZnSeZnS core-shell quantum dots and their conjugation with E. coli O-157 Highlights: * QDs with variety morphology were obtained via an ...

  18. Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Xufan; Lin, Ming-Wei; Lin, Junhao; Huang, Bing; Puretzky, Alexander A.; Ma, Cheng; Wang, Kai; Zhou, Wu; Pantelides, Sokrates T.; Chi, Miaofang; et al

    2016-04-01

    Two-dimensional (2D) heterostructures hold the promise for future atomically-thin electronics and optoelectronics due to their diverse functionalities. While heterostructures consisting of different transition metal dichacolgenide monolayers with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) or edge epitaxy, constructing heterostructures from monolayers of layered semiconductors with large lattice misfits still remains challenging. Here, we report the growth of monolayer GaSe/MoSe2 heterostructures with large lattice misfit by two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between themore » two layers, forming an incommensurate vdW heterostructure. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2 monolayer domains in lateral GaSe/MoSe2 heterostructures, GaSe monolayers are found to overgrow MoSe2 during CVD, forming a stripe of vertically stacked vdW heterostructure at the crystal interface. Such vertically-stacked vdW GaSe/MoSe2 heterostructures are shown to form p-n junctions with effective transport and separation of photo-generated charge carriers between layers, resulting in a gate-tunable photovoltaic response. In conclusion, these GaSe/MoSe2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.« less

  19. Spectral photoresponse of ZnSe/GaAs(001) heterostructures with CdSe ultra-thin quantum well insertions

    SciTech Connect (OSTI)

    Valverde-Chvez, D. A.; Sutara, F.; Hernndez-Caldern, I.

    2014-05-15

    We present a study of the spectral photoresponse (SPR) of ZnSe/GaAs(001) heterostructures for different ZnSe film thickness with and without CdSe ultra-thin quantum well (UTQW) insertions. We observe a significant increase of the SPR of heterostructures containing 3 monolayer thick CdSe UTQW insertions; these results encourage their use in photodetectors and solar cells.

  20. Twinning effect on photoluminescence spectra of ZnSe nanowires

    SciTech Connect (OSTI)

    Xu, Jing; Wang, Chunrui Wu, Binhe; Xu, Xiaofeng; Chen, Xiaoshuang; Oh, Hongseok; Baek, Hyeonjun; Yi, Gyu-Chul

    2014-11-07

    Bandgap engineering in a single material along the axial length of nanowires may be realized by arranging periodic twinning, whose twin plane is vertical to the axial length of nanowires. In this paper, we report the effect of twin on photoluminescence of ZnSe nanowires, which refers to the bandgap of it. The exciton-related emission peaks of transverse twinning ZnSe nanowires manifest a 10-meV-blue-shift in comparison with those of longitudinal twinning ZnSe nanowires. The blue-shift is attributed to quantum confinement effect, which is influenced severely by the proportion of wurtzite ZnSe layers in ZnSe nanowires.

  1. The role of the isolated 6s states in BiVO{sub 4} on the electronic and atomic structures

    SciTech Connect (OSTI)

    Ma, Jie; Wang, Lin-Wang

    2014-10-27

    BiVO{sub 4} is one of the most promising photoanodes for water-splitting applications. Similar to many d{sup 10} materials, where the full-shell d electrons are not directly involved in the bonding, the Bi 6s electrons form isolated low-energy bands in BiVO{sub 4}. By systematically altering the energy of the Bi 6s states, we find direct evidences that the isolated s states, through the s-p coupling, affect the BiVO{sub 4} properties, including valence band maximum position, charge density, and atomic structural distortion. We find that many good properties of BiVO{sub 4} for water splitting are related to the s-p coupling due to the existence of Bi 6s states. Based on this understanding, we propose that alloying Bi with Sb can enhance these properties, and hence improve the water-splitting efficiency.

  2. Synthesis of BiPbSrCaCuO superconductor

    DOE Patents [OSTI]

    Hults, W.L.; Kubat-Martin, K.A.; Salazar, K.V.; Phillips, D.S.; Peterson, D.E.

    1994-04-05

    A process and a precursor composition for preparing a lead-doped bismuth-strontium-calcium-copper oxide superconductor of the formula Bi[sub a]Pb[sub b]Sr[sub c]Ca[sub d]Cu[sub e]O[sub f] wherein a is from about 1.7 to about 1.9, b is from about 0.3 to about 0.45, c is from about 1.6 to about 2.2, d is from about 1.6 to about 2.2, e is from about 2.97 to about 3.2 and f is 10[+-]z by reacting a mixture of Bi[sub 4]Sr[sub 3]Ca[sub 3]Cu[sub 4]O[sub 16[+-]z], an alkaline earth metal cuprate, e.g., Sr[sub 9]Ca[sub 5]Cu[sub 24]O[sub 41], and an alkaline earth metal plumbate, e.g., Ca[sub 2[minus]x]Sr[sub x]PbO[sub 4] wherein x is about 0.5, is disclosed.

  3. Synthesis of BiPbSrCaCuO superconductor

    DOE Patents [OSTI]

    Hults, William L.; Kubat-Martin, Kimberly A.; Salazar, Kenneth V.; Phillips, David S.; Peterson, Dean E.

    1994-01-01

    A process and a precursor composition for preparing a lead-doped bismuth-strontium-calcium-copper oxide superconductor of the formula Bi.sub.a Pb.sub.b Sr.sub.c Ca.sub.d Cu.sub.e O.sub.f wherein a is from about 1.7 to about 1.9, b is from about 0.3 to about 0.45, c is from about 1.6 to about 2.2, d is from about 1.6 to about 2.2, e is from about 2.97 to about 3.2 and f is 10.+-.z by reacting a mixture of Bi.sub.4 Sr.sub.3 Ca.sub.3 Cu.sub.4 O.sub.16.+-.z, an alkaline earth metal cuprate, e.g., Sr.sub.9 Ca.sub.5 Cu.sub.24 O.sub.41, and an alkaline earth metal plumbate, e.g., Ca.sub.2-x Sr.sub.x PbO.sub.4 wherein x is about 0.5, is disclosed.

  4. Structural and ferromagnetic properties of an orthorhombic phase of MnBi stabilized with Rh additions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Taufour, Valentin; Thimmaiah, Srinivasa; March, Stephen; Saunders, Scott; Sun, Kewei; Lamichhane, Tej Nath; Kramer, Matthew J.; Bud’ko, Sergey L.; Canfield, Paul C.

    2015-07-28

    The article addresses the possibility of alloy elements in MnBi which may modify the thermodynamic stability of the NiAs-type structure without significantly degrading the magnetic properties. The addition of small amounts of Rh and Mn provides an improvement in the thermal stability with some degradation of the magnetic properties. The small amounts of Rh and Mn additions in MnBi stabilize an orthorhombic phase whose structural and magnetic properties are closely related to the ones of the previously reported high-temperature phase of MnBi (HT MnBi). The properties of the HT MnBi, which is stable between 613 and 719 K, have notmore » been studied in detail because of its transformation to the stable low-temperature MnBi (LT MnBi), making measurements near and below its Curie temperature difficult. The Rh-stabilized MnBi with chemical formula Mn1.0625–xRhxBi [x=0.02(1)] adopts a new superstructure of the NiAs/Ni2In structure family. It is ferromagnetic below a Curie temperature of 416 K. The critical exponents of the ferromagnetic transition are not of the mean-field type but are closer to those associated with the Ising model in three dimensions. The magnetic anisotropy is uniaxial; the anisotropy energy is rather large, and it does not increase when raising the temperature, contrary to what happens in LT MnBi. The saturation magnetization is approximately 3μB/f.u. at low temperatures. Thus, while this exact composition may not be application ready, it does show that alloying is a viable route to modifying the stability of this class of rare-earth-free magnet alloys.« less

  5. Structural and ferromagnetic properties of an orthorhombic phase of MnBi stabilized with Rh additions

    SciTech Connect (OSTI)

    Taufour, Valentin; Thimmaiah, Srinivasa; March, Stephen; Saunders, Scott; Sun, Kewei; Lamichhane, Tej Nath; Kramer, Matthew J.; Bud’ko, Sergey L.; Canfield, Paul C.

    2015-07-28

    The article addresses the possibility of alloy elements in MnBi which may modify the thermodynamic stability of the NiAs-type structure without significantly degrading the magnetic properties. The addition of small amounts of Rh and Mn provides an improvement in the thermal stability with some degradation of the magnetic properties. The small amounts of Rh and Mn additions in MnBi stabilize an orthorhombic phase whose structural and magnetic properties are closely related to the ones of the previously reported high-temperature phase of MnBi (HT MnBi). The properties of the HT MnBi, which is stable between 613 and 719 K, have not been studied in detail because of its transformation to the stable low-temperature MnBi (LT MnBi), making measurements near and below its Curie temperature difficult. The Rh-stabilized MnBi with chemical formula Mn1.0625–xRhxBi [x=0.02(1)] adopts a new superstructure of the NiAs/Ni2In structure family. It is ferromagnetic below a Curie temperature of 416 K. The critical exponents of the ferromagnetic transition are not of the mean-field type but are closer to those associated with the Ising model in three dimensions. The magnetic anisotropy is uniaxial; the anisotropy energy is rather large, and it does not increase when raising the temperature, contrary to what happens in LT MnBi. The saturation magnetization is approximately 3μB/f.u. at low temperatures. Thus, while this exact composition may not be application ready, it does show that alloying is a viable route to modifying the stability of this class of rare-earth-free magnet alloys.

  6. CuInSe/sub 2/-based photoelectrochemical cells: their use in characterization of thin CuInSe/sub 2/ films, and as photovoltaic cells per se

    SciTech Connect (OSTI)

    Cahen, D.; Chen, Y.W.; Ireland, P.J.; Noufi, R.; Turner, J.A.; Rincon, C.; Bachmann, K.J.

    1984-05-01

    Photoelectrochemistry has been employed to characterize the p-CuInSe/sub 2/ component of the CdS/CuInSe/sub 2/ on-metal and a nonaqueous electrolyte containing a redox couple not specifically adsorbed onto the semiconductor, we can test the films for photovoltaic activity and obtain effective electronic properties of them, before CdS deposition, in a nondestructive manner. Electrochemical decomposition of CuInSe/sub 2/ was investigated in acetonitrile solutions to determine the mechanism of decomposition (n and p) in the dark and under illumination. Electrochemical, solution chemical and surface analyses confirmed at the light-assisted decomposition of CuInSe/sub 2/ resulted in metal ions and elemental chalcogen. On the basis of the results from the electrochemical decomposition, and studies on the solid state chemistry of the (Cu/sub 2/Se)/sub x/(In/sub 2/Se/sub 3/)/sub 1-x/ system and surface analyses, the CuInSe/sub 2//polyiodide interface was stabilized and up to 11.7% conversion efficiencies were obtained.

  7. Thermoelectric transport of Se-rich Ag{sub 2}Se in normal phases and phase transitions

    SciTech Connect (OSTI)

    Mi, Wenlong; Lv, Yanhong; Qiu, Pengfei; Shi, Xun E-mail: cld@mail.sic.ac.cn; Chen, Lidong E-mail: cld@mail.sic.ac.cn; Zhang, Tiansong

    2014-03-31

    Small amount of Se atoms are used to tune the carrier concentrations (n{sub H}) and electrical transport in Ag{sub 2}Se. Significant enhancements in power factor and thermoelectric figure of merit (zT) are observed in the compositions of Ag{sub 2}Se{sub 1.06} and Ag{sub 2}Se{sub 1.08}. The excessive Se atoms do not change the intrinsically electron-conducting character in Ag{sub 2}Se. The detailed analysis reveals the experiment optimum carrier concentration in Ag{sub 2}Se is around 5??10{sup 18}?cm{sup ?3}. We also investigate the temperature of maximum zT and the thermoelectric transport during the first order phase transitions using the recently developed measurement system.

  8. Effect of Composition and Heat Treatment on MnBi Magnetic Materials

    SciTech Connect (OSTI)

    Cui, Jun; Choi, Jung-Pyung; Polikarpov, Evgueni; Bowden, Mark E.; Xie, Wei; Li, Guosheng; Nie, Zimin; Zarkevich, Nikolai; Kramer, Matthew J.; Johnson, Duane D.

    2014-08-17

    The metallic compound MnBi is a promising rare-earth-free permanent magnet material. Compare to other rare-earth-free candidates, MnBi stands out for its high intrinsic coercivity (Hci) and its large positive temperature coefficient. Several groups have demonstrated that the Hci of MnBi compound in thin film or in powder form can exceed 12 kOe and 26 kOe at 300 K and 523 K, respectively. Such steep increase in Hci with increasing temperature is unique to MnBi. Consequently, MnBi is a highly sought-after hard phase for exchange coupling nanocomposite magnets. The reaction between Mn and Bi is peritectic, so Mn tends to precipitate out of the MnBi liquid during the solidification process. As result, the composition of the Mn-Bi alloy with the largest amount of the desired LTP (low temperature phase) MnBi and highest saturation magnetization will be over-stoichiometric and rich in Mn. The amount of additional Mn required to compensate the Mn precipitation depends on solidification rate: the faster the quench speed, the less Mn precipitates. Here we report a systematic study of the effect of composition and heat treatments on the phase contents and magnetic properties of Mn-Bi alloys. In this study, Mn-Bi alloys with 14 compositions were prepared using conventional metallurgical methods such as arc melting and vacuum heat treatment, and the obtained alloys were analyzed for compositions, crystal structures, phase content, and magnetic properties. The results show that the composition with 55 at.% Mn exhibits the highest LTP MnBi content and the highest magnetization. The sample with this composition shows >90 wt.% LTP MnBi content. Its measured saturation magnetization is 68 emu/g with 2.3 T applied field at 300 K; its coercivity is 13 kOe and its energy product is 12 MGOe at 300 K. A bulk magnet fabricated using this powder exhibits an energy product of 8.2 MGOe.

  9. Glass formation and the third harmonic generation of Cu{sub 2}SeGeSe{sub 2}As{sub 2}Se{sub 3} glasses

    SciTech Connect (OSTI)

    Reshak, A. H.; Klymovych, O. S.; Zmiy, O. F.; Myronchuk, G. L.; Zamuruyeva, O. V.; Alahmed, Z. A.; Chysk, J.; Bila, Jiri; Kamarudin, H.

    2014-10-14

    We have performed the investigation of the nonlinear optical properties namely the third harmonic generation (THG) of the glass-formation region in the Cu{sub 2}SeGeSe{sub 2}As{sub 2}Se{sub 3} system. The samples were synthesized by direct single-temperature method from high-purity elementary substances. We have found that the value of disorder parameter ? depends on the composition of the glassy alloys. The measurements show that increasing the Cu{sub 2}Se concentration leads to increased slope of the absorption edge, which may be explained by the decrease of the height of random potential relief for the electrons in the tails of the state density which border the band edges. A very sharp increase in the THG at low temperature was observed. Significant enhancement in THG was obtained with decreasing the energy gap, which agreed well with the nonlinear optical susceptibilities obtained from other glasses.

  10. Philips: Order (2014-SE-48006) | Department of Energy

    Energy Savers [EERE]

    Order (2014-SE-48006) Philips: Order (2014-SE-48006) April 14, 2015 DOE ordered Philips Lighting North America Corp. to pay a $75,000 civil penalty after finding Philips had manufactured and distributed in commerce in the U.S. at least 12,275 units of a variety of illuminated exit sign models. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and Philips. PDF icon Philips: Order (2014-SE-48006) More Documents & Publications Philips: Proposed Penalty

  11. Everest Refrigeration: Order (2015-SE-42001) | Department of Energy

    Energy Savers [EERE]

    Order (2015-SE-42001) Everest Refrigeration: Order (2015-SE-42001) June 9, 2015 DOE ordered Bu Sung America Corporation (dba Everest Refrigeration) to pay a $12,080 civil penalty after finding Bu Sung had manufactured and distributed in commerce in the U.S. at least 64 units of noncompliant commercial refrigerator basic model ESGR3. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and Bu Sung. PDF icon Everest Refrigeration: Order (2015-SE-42001) More

  12. Size dependent structural, vibrational and magnetic properties of BiFeO{sub 3} and core-shell structured BiFeO{sub 3}@SiO{sub 2} nanoparticles

    SciTech Connect (OSTI)

    Chauhan, Sunil Kumar, Manoj Chhoker, Sandeep Katyal, S. C.

    2014-04-24

    Bulk BiFeO{sub 3}, BiFeO{sub 3} nanoparticles and core-shell structured BiFeO{sub 3}@SiO{sub 2} nanoparticles were synthesized by solid state reaction method, sol-gel and Stöber process (SiO{sub 2} shell) respectively. Transmission electron microscopy image confirmed the core-shell structure of BiFeO{sub 3}@SiO{sub 2} nanoparticles with BiFeO3 core ∼50-90 nm and SiO{sub 2} shell ∼16 nm. X-ray diffraction and FTIR spectroscopy results showed the presence of distorted rhombohedral structure with R3c space group in all three samples. The magnetic measurement indicated the existence of room-temperature weak ferromagnetism in core-shell BiFeO{sub 3}@SiO{sub 2} nanoparticles and BiFeO3 nanoparticles, whereas bulk BiFeO{sub 3} showed antiferromagnteic nature. Electron Spin Resonance results confirmed the enhancement in magnetic properties of coreshell structured BiFeO{sub 3}@SiO{sub 2} nanoparticles in comparison with BiFeO{sub 3} nanoparticles and bulk BiFeO{sub 3}.

  13. U-105:Oracle Java SE Critical Patch Update Advisory

    Broader source: Energy.gov [DOE]

    Multiple vulnerabilities were reported in Oracle Java SE. A remote user can execute arbitrary code on the target system. A remote user can cause denial of service conditions.

  14. Research Forum Schedule-Research-PHaSe-EFRC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Forum Schedule PHaSE Research Fora and Talks This webpage is provided for legacy archive purposes only, as of 30 April 2015.

  15. SeQuential Biofuels LLC | Open Energy Information

    Open Energy Info (EERE)

    Biofuels LLC Jump to: navigation, search Name: SeQuential Biofuels LLC Place: Portland, Oregon Zip: 97231 Sector: Biofuels Product: A biofuels marketing and distribution company...

  16. SE Idaho Load Service Update - June 10, 2015

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SE-Idaho-Load-Service-Update---June-10,-2015 Sign In About | Careers | Contact | Investors | bpa.gov Search Doing Business Expand Doing Business Customer Involvement Expand...

  17. A novel Bi-based phosphomolybdate photocatalyst K{sub 2}Bi(PO{sub 4})(MoO{sub 4}): Crystal structure, electronic structure and photocatalytic activity

    SciTech Connect (OSTI)

    Huang, Hongwei; Chen, Gong; Wang, Shuobo; Kang, Lei; Lin, Zheshuai; Zhang, Yihe

    2014-03-01

    Graphical abstract: - Highlights: A new type of phosphomolybdate K{sub 2}Bi(PO{sub 4})(MoO{sub 4}) photocatalyst was successfully synthesized. The products synthesized at 600 C were mainly composed of nano-cubes. The indirect band gap of K{sub 2}Bi(PO{sub 4})(MoO{sub 4}) has been determined to be 2.93 eV. K{sub 2}Bi(PO{sub 4})(MoO{sub 4}) synthesized at 600 C exhibits the highest photocatalytic activity. The electronic structure was calculated by density functional calculations. - Abstract: A novel phosphomolybdate photocatalyst K{sub 2}Bi(PO{sub 4})(MoO{sub 4}) has been successfully developed via a solid-state reaction. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), diffuse reflectance spectrum (DRS) and photoluminescence (PL) spectra. The photocatalytic activities of the samples prepared at different temperature were determined by the photooxidative decomposition of methylene blue (MB) in aqueous solution. The results revealed that K{sub 2}Bi(PO{sub 4})(MoO{sub 4}) can be used as an effective photocatalyst under UVvis irradiation and the nanocubes obtained at 600 C exhibits the highest photocatalytic activity. The photodegradation of MB by K{sub 2}Bi(PO{sub 4})(MoO{sub 4}) nanocrystals followed the first-order kinetics. Theoretical calculations on electronic structure confirmed the indirect optical transitions property in the absorption edge region of K{sub 2}Bi(PO{sub 4})(MoO{sub 4}), and the orbital constitutions of CB and VB were also analyzed.

  18. Evidence against a charge density wave on Bi(111)

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kim, T. K.; Wells, J.; Kirkegaard, C.; Li, Z.; Hoffmann, S. V.; Gayone, J. E.; Fernandez-Torrente, I.; Häberle, P.; Pascual, J. I.; Moore, K. T.; et al

    2005-08-18

    The Bi(111) surface was studied by scanning tunneling microscopy (STM), transmission electron microscopy (TEM) and angle-resolved photoemission (ARPES) in order to verify the existence of a recently proposed surface charge density wave (CDW). The STM and TEM results to not support a CDW scenario at low temperatures. Thus the quasiparticle interference pattern observed in STM confirms the spin-orbit split character of the surface states which prevents the formation of a CDW, even in the case of good nesting. The dispersion of the electronic states observed with ARPES agrees well with earlier findings. In particular, the Fermi contour of the electronmore » pocket at the centre of the surface Brillouin zone is found to have a hexagonal shape. However, no gap opening or other signatures of a CDW phase transition can be found in the temperature-dependent data.« less

  19. CdSe self-assembled quantum dots with ZnCdMgSe barriers emitting throughout the visible spectrum

    SciTech Connect (OSTI)

    Perez-Paz, M. Noemi; Zhou Xuecong; Munoz, Martin; Lu Hong; Sohel, Mohammad; Tamargo, Maria C.; Jean-Mary, Fleumingue; Akins, Daniel L.

    2004-12-27

    Self-assembled quantum dots of CdSe with ZnCdMgSe barriers have been grown by molecular beam epitaxy on InP substrates. The optical and microstructural properties were investigated using photoluminescence (PL) and atomic force microscopy (AFM) measurements. Control and reproducibility of the quantum dot (QD) size leading to light emission throughout the entire visible spectrum range has been obtained by varying the CdSe deposition time. Longer CdSe deposition times result in a redshift of the PL peaks as a consequence of an increase of QD size. AFM studies demonstrate the presence of QDs in uncapped structures. A comparison of this QD system with CdSe/ZnSe shows that not only the strain but also the chemical properties of the system play an important role in QD formation.

  20. Effect of composition and heat treatment on MnBi magnetic materials

    SciTech Connect (OSTI)

    Cui, Jun [Pacific Northwest National Laboratory; Choi, Jung-Pyung [Pacific Northwest National Laboratory; Polikarpov, Evgueni [Pacific Northwest National Laboratory; Bowden, Mark E [Pacific Northwest National Laboratory; Xie, Wei [Pacific Northwest National Laboratory; Li, Guosheng [Pacific Northwest National Laboratory; Nie, Zimin [Pacific Northwest National Laboratory; Zarkevich, Nikolai [Ames Laboratory; Kramer, Matthew J [Ames Laboratory; Johnson, Duane [Ames Laboratory

    2014-10-01

    The metallic compound MnBi is a promising rare-earth-free permanent magnet material, unique among all candidates for its high intrinsic coercivity (Hci) and its large positive temperature coefficient. The Hci of MnBi in thin-film or powder form can exceed 12 and 26 kOe at 300 and 523 K, respectively. Such a steep rise in Hci with increasing temperature is unique to MnBi. Consequently, MnBi is a highly sought-after hard phase for exchange coupling nanocomposite magnets. However, the reaction between Mn and Bi is peritectic, and hence Mn tends to precipitate out of the MnBi liquid during the solidification process. As result, when the alloy is prepared using conventional induction or arc-melting casting methods, additional Mn is required to compensate the precipitation of Mn. In addition to composition, post-casting annealing plays an important role in obtaining a high content of MnBi low-temperature phase (LTP) because the annealing encourages the Mn precipitates and the unreacted Bi to react, forming the desired LTP phase. Here we report a systematic study of the effect of composition and heat treatments on the phase content and magnetic properties of MnBi alloys. In this study, 14 compositions were prepared using conventional metallurgical methods, and the compositions, crystal structures, phase content and magnetic properties of the resulting alloys were analyzed. The results show that the composition with 55 at.% Mn exhibits both the highest LTP content (93 wt.%) and magnetization (74 emu g?1 with 9 T applied field at 300 K).

  1. Wide emission-tunable CdTeSe/ZnSe/ZnS core-shell quantum dots and their

    Office of Scientific and Technical Information (OSTI)

    conjugation with E. coli O-157 (Journal Article) | SciTech Connect Wide emission-tunable CdTeSe/ZnSe/ZnS core-shell quantum dots and their conjugation with E. coli O-157 Citation Details In-Document Search Title: Wide emission-tunable CdTeSe/ZnSe/ZnS core-shell quantum dots and their conjugation with E. coli O-157 Highlights: * QDs with variety morphology were obtained via an injection controlled process. * 3-D PL spectra of core-shell QDs show different excitation wavelength dependence. *

  2. Tuning electron-electron correlation in noncentrosymmetric superconductor BiPd

    SciTech Connect (OSTI)

    Joshi, Bhanu Thamizhavel, A. Ramakrishnan, S.

    2014-04-24

    In this work, we have successfully tuned the electron-electron correlation in new noncentrosymmertic superconductor (NCS) BiPd via Pb substitution on one of the inequivalent Bi sites present in BiPd and simultaneously keeping the parent noncentrosymmetric crystal structure intact. Heat capacity data is suggesting a fourfold increase in density of states at Fermi level via Pb substitution while superconducting transition temperature has been suppressed. This work will clearly open up a rare chance to study the effect of electron–electron correlation via selective tuning of DOS at Fermi level in NCS.

  3. The tin impurity in Bi0.5Sb1.5Te3 alloys

    Broader source: Energy.gov [DOE]

    Extends work on tin to p-type thermoelectric alloys of formula Bi(2-x)Sb(x)Te(3) doped with Sn. Both single crystals and polycrystals prepared using powder metallurgical techniques are studied and properties reported.

  4. Waiver of the Bi-Weekly Pay L:imitation for Emergency Response Activities

    Broader source: Energy.gov [DOE]

    Heads of Departmental elements, with the concurrence of their servicing Human Resources staff, are authorized to waive the bi-weekly pay limitation for employees engaged in emergency response...

  5. BI/iPortal Training Opportunities in 2016 | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Lunch and Learn: Tips and Tricks when using the BI Dashboards 12:00 pm - 1:00 pm WebEx All courses are in Eastern Standard Time (EST) For course descriptions, click here Thank ...

  6. Thermodynamic and nonstoichiometric behavior of the lead-doped and lead-free Bi-2212 systems

    SciTech Connect (OSTI)

    Tetenbaum, M.; Hash, M.; Tani, B.S.; Luo, J.S.; Maroni, V.A.

    1997-02-01

    EMF measurements of oxygen fugacities as a function of stoichiometry were made on pb-doped and Pb-free superconducting ceramics at 700-815 C using oxygen titration. Equations of oxygen partial pressure vs composition and temperature were derived from the EMF measurements. Thermodynamic assessments of the partial molar quantities {Delta}{bar H}(O{sub 2}) and {Delta}{bar S}(O{sub 2}) for Pb-doped Bi- 2212 and Pb-free Bi-2212 indicate that the solid-state decomposition of these Bi cuprates at low oxygen partial pressure can be represented by the diphasic CuO-Cu{sub 2}O system. Comparison of these results with Pb-doped Bi-2223 in powder and silver sheath form is presented.

  7. CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor

    SciTech Connect (OSTI)

    Sedova, I. V. Lyublinskaya, O. G.; Sorokin, S. V.; Sitnikova, A. A.; Toropov, A. A.; Donatini, F.; Dang, Si Le; Ivanov, S. V.

    2007-11-15

    A procedure for formation of CdSe quantum dots (QDs) in a ZnSe matrix is suggested. The procedure is based on the introduction of a CdTe submonolayer stressor deposited on the matrix surface just before deposition of the material of the QDs. (For CdTe/ZnSe structure, the relative lattice mismatch is {delta}a/a {approx} 14%.) The stressor forms small strained islands at the ZnSe surface, thus producing local fields of high elastic stresses controlling the process of the self-assembling of the QDs. According to the data of transmission electron microscopy, this procedure allows a considerable increase in the surface density of QDs, with a certain decrease in their lateral dimensions (down to 4.5 {+-} 1.5 nm). In the photoluminescence spectra, a noticeable ({approx}150 meV) shift of the peak to longer wavelengths from the position of the reference CdSe/ZnSe QD structure is observed. The shift is due to some transformation of the morphology of the QDs and an increase in the Cd content in the QDs. Comprehensive studies of the nanostructures by recording and analyzing the excitation spectra of photoluminescence, the time-resolved photoluminescence spectra, and the cathodoluminescence spectra show that the emission spectra involve two types of optical transitions, namely, the type-I transitions in the CdSeTe/ZnSe QDs and the type-II transitions caused mainly by the low cadmium content (Zn,Cd)(Se,Te)/ZnSe layer formed between the QDs.

  8. Traulsen: Order (2015-SE-42002) | Department of Energy

    Energy Savers [EERE]

    Order (2015-SE-42002) Traulsen: Order (2015-SE-42002) August 31, 2015 DOE ordered Traulsen - ITW Food Group LLC to pay a $52,600 civil penalty after finding Traulsen had manufactured and distributed in commerce in the U.S. at least 284 units of commercial refrigerator-freezer basic model RDT132DUT-HHS, a noncompliant product. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and Traulsen. PDF icon Traulsen: Order (2015-SE-42002) More Documents &

  9. Victory: Order (2015-SE-42033) | Department of Energy

    Energy Savers [EERE]

    Order (2015-SE-42033) Victory: Order (2015-SE-42033) October 27, 2015 DOE ordered Victory Refrigeration to pay a $1,600 civil penalty after finding Victory had manufactured and distributed in commerce in the U.S. at least 8 units of commercial refrigerator-freezer basic model RFS-1D-S1-EW-PT-HD, a noncompliant product. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and Victory. PDF icon Victory: Order (2015-SE-42033) More Documents & Publications

  10. Optical Probing of metamagnetic phases in epitaxial EuSe

    SciTech Connect (OSTI)

    Galgano, G. D.; Henriques, A. B.; Bauer, G.; Springholz, G.

    2011-12-23

    EuSe is a wide gap magnetic semiconductors with a potential for applications in proof-of-concept spintronic devices. When the temperature is lowered, EuSe goes through sharp transitions between a variety of magnetic phases and is thus described as metamagnetic. The purpose of the present investigation is to correlate the magnetic order to the sharp dichroic doublet, discovered recently in high quality thin epitaxial layers of EuSe, grown by molecular beam epitaxy. We report detailed measurements of the doublet positions and intensities as a function of magnetic field in low temperatures, covering several magnetic phases.

  11. Design and optimization of a bi-axial vibration-driven electromagnetic

    Office of Scientific and Technical Information (OSTI)

    generator (Journal Article) | SciTech Connect Design and optimization of a bi-axial vibration-driven electromagnetic generator Citation Details In-Document Search Title: Design and optimization of a bi-axial vibration-driven electromagnetic generator To scavenge energy from ambient vibrations with arbitrary in-plane motion directions and over a wide frequency range, a novel electromagnetic vibration energy harvester is designed and optimized. In the harvester, a circular cross-section

  12. Determination of the branching ratio for the {sup 209}Bi (n, {gamma}) {sup 210}Bi reaction from 500 eV to 20 keV

    SciTech Connect (OSTI)

    Borella, A.; Berthomieux, E.; Domingo-Pardo, C.; Gunsing, F.; Marrone, S.; Martinez, T.; Massimi, C.; Mastinu, P. M.; Milazzo, P. M.; Schillebeeckx, P.; Tagliente, G.; Tain, J.; Terlizzi, R.; Wynants, R.

    2006-07-01

    Energy differential neutron capture cross section measurements have been performed to determine the branching ratio for the {sup 209}Bi(n, {gamma}) reaction. The measurements were carried out at the time-of-flight facility GELINA of the IRMM in Geel (Belgium). The capture measurements were performed at a 12 m flight path using three High-Purity Germanium detectors. The experimental set-up was optimized to reduce the prompt background due to scattered neutrons. Several {gamma}-ray spectra corresponding to the {sup 209}Bi + n resonances up to 20 keV were deduced. The results of a preliminary data analysis are given in this paper. (authors)

  13. BiGG Models: A platform for integrating, standardizing and sharing genome-scale models

    SciTech Connect (OSTI)

    King, Zachary A.; Lu, Justin; Drager, Andreas; Miller, Philip; Federowicz, Stephen; Lerman, Joshua A.; Ebrahim, Ali; Palsson, Bernhard O.; Lewis, Nathan E.

    2015-10-17

    In this study, genome-scale metabolic models are mathematically structured knowledge bases that can be used to predict metabolic pathway usage and growth phenotypes. Furthermore, they can generate and test hypotheses when integrated with experimental data. To maximize the value of these models, centralized repositories of high-quality models must be established, models must adhere to established standards and model components must be linked to relevant databases. Tools for model visualization further enhance their utility. To meet these needs, we present BiGG Models (http://bigg.ucsd.edu), a completely redesigned Biochemical, Genetic and Genomic knowledge base. BiGG Models contains more than 75 high-quality, manually-curated genome-scale metabolic models. On the website, users can browse, search and visualize models. BiGG Models connects genome-scale models to genome annotations and external databases. Reaction and metabolite identifiers have been standardized across models to conform to community standards and enable rapid comparison across models. Furthermore, BiGG Models provides a comprehensive application programming interface for accessing BiGG Models with modeling and analysis tools. As a resource for highly curated, standardized and accessible models of metabolism, BiGG Models will facilitate diverse systems biology studies and support knowledge-based analysis of diverse experimental data.

  14. BiGG Models: A platform for integrating, standardizing and sharing genome-scale models

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    King, Zachary A.; Lu, Justin; Drager, Andreas; Miller, Philip; Federowicz, Stephen; Lerman, Joshua A.; Ebrahim, Ali; Palsson, Bernhard O.; Lewis, Nathan E.

    2015-10-17

    In this study, genome-scale metabolic models are mathematically structured knowledge bases that can be used to predict metabolic pathway usage and growth phenotypes. Furthermore, they can generate and test hypotheses when integrated with experimental data. To maximize the value of these models, centralized repositories of high-quality models must be established, models must adhere to established standards and model components must be linked to relevant databases. Tools for model visualization further enhance their utility. To meet these needs, we present BiGG Models (http://bigg.ucsd.edu), a completely redesigned Biochemical, Genetic and Genomic knowledge base. BiGG Models contains more than 75 high-quality, manually-curated genome-scalemore » metabolic models. On the website, users can browse, search and visualize models. BiGG Models connects genome-scale models to genome annotations and external databases. Reaction and metabolite identifiers have been standardized across models to conform to community standards and enable rapid comparison across models. Furthermore, BiGG Models provides a comprehensive application programming interface for accessing BiGG Models with modeling and analysis tools. As a resource for highly curated, standardized and accessible models of metabolism, BiGG Models will facilitate diverse systems biology studies and support knowledge-based analysis of diverse experimental data.« less

  15. Optical Properties of CdSe Nanoparticle Assemblies

    SciTech Connect (OSTI)

    Huser, T; Gerion, D; Zaitseva, N; Krol, D M; Leon, F R

    2003-11-24

    We report on three-dimensional fluorescence imaging of micron-size faceted crystals precipitated from solutions of CdSe nanocrystals. Such crystals have previously been suggested to be superlattices of CdSe quantum dots [1,2]. Possible applications for these materials include their use in optical and optoelectronic devices. The micron-size crystals were grown by slow evaporation from toluene solutions of CdSe nanocrystals in the range of 3-6 nm, produced by traditional wet-chemistry techniques. By using a confocal microscope with laser illumination, three-dimensional raster-scanning and synchronized hyper-spectral detection, we have generated spatial profiles of the fluorescence emission intensity and spectrum. The fluorescence data of the micro-crystals were compared with spectra of individual nanocrystals obtained from the same solution. The results do not support the assertion that these microcrystals consist of CdSe superlattices.

  16. Enhanced thermoelectric power and electronic correlations in RuSe?

    SciTech Connect (OSTI)

    Wang, Kefeng; Wang, Aifeng; Tomic, A.; Wang, Limin; Abeykoon, A. M. Milinda; Dooryhee, E.; Billinge, S. J.L.; Petrovic, C.

    2015-03-03

    We report the electronic structure, electric and thermal transport properties of Ru??xIrxSe? (x ? 0.2). RuSe? is a semiconductor that crystallizes in a cubic pyrite unit cell. The Seebeck coefficient of RuSe? exceeds -200 V/K around 730 K. Ir substitution results in the suppression of the resistivity and the Seebeck coefficient, suggesting the removal of the peaks in density of states near the Fermi level. Ru?.?Ir?.?Se? shows a semiconductor-metal crossover at about 30 K. The magnetic field restores the semiconducting behavior. Our results indicate the importance of the electronic correlations in enhanced thermoelectricity of RuSb?.

  17. Synthesis and properties of new CdSe-AgI-As{sub 2}Se{sub 3} chalcogenide glasses

    SciTech Connect (OSTI)

    Kassem, M.; ULCO, LPCA, EAC CNRS 4493 F-59140 Dunkerque ; Le Coq, D.; Fourmentin, M.; Hindle, F.; Bokova, M.; Cuisset, A.; Masselin, P.; Bychkov, E.; ULCO, LPCA, EAC CNRS 4493 F-59140 Dunkerque

    2011-02-15

    Research highlights: {yields} Determination of the glass-forming region in the pseudo-ternary CdSe-AgI-As{sub 2}Se{sub 3} system. {yields} Characterization of macroscopic properties of the new CdSe-AgI-As{sub 2}Se{sub 3} glasses. {yields} Far infrared transmission of chalcogenide glasses. {yields} Characterization of the total conductivity of CdSe-AgI-As{sub 2}Se{sub 3} glasses. -- Abstract: The glass-forming region in the pseudo-ternary CdSe-AgI-As{sub 2}Se{sub 3} system was determined. Measurements including differential scanning calorimetry (DSC), density, and X-ray diffraction were performed. The effect resulting from the addition of CdSe or AgI has been highlighted by examining three series of different base glasses. The characteristic temperatures of the glass samples, including glass transition (T{sub g}), crystallisation (T{sub x}), and melting (T{sub m}) temperatures are reported and used to calculate their {Delta}T = T{sub x} - T{sub g} and their Hruby, H{sub r} = (T{sub x} - T{sub g})/(T{sub m} - T{sub x}), criteria. Evolution of the total electrical conductivity {sigma} and the room temperature conductivity {sigma}{sub 298} was also studied. The terahertz transparency domain in the 50-600 cm{sup -1} region was pointed for different chalcogenide glasses (ChGs) and the potential of the THz spectroscopy was suggested to obtain structural information on ChGs.

  18. Seaga: Noncompliance Determination (2015-SE-52001) | Department of Energy

    Energy Savers [EERE]

    Seaga: Noncompliance Determination (2015-SE-52001) Seaga: Noncompliance Determination (2015-SE-52001) June 19, 2015 DOE issued a Notice of Noncompliance Determination to Seaga Manufacturing, Inc. finding that the refrigerated bottle and canned beverage vending machine (BVM) basic model with name plate model SP536R does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. Seaga must immediately notify each person (or company) to

  19. Philips: Noncompliance Determination (2014-SE-48006) | Department of Energy

    Energy Savers [EERE]

    Noncompliance Determination (2014-SE-48006) Philips: Noncompliance Determination (2014-SE-48006) March 26, 2015 DOE issued a Notice of Noncompliance Determination to Philips Lighting North America Corp. finding that a variety of illuminated exit sign models do not comport with the energy conservation standards, based on information provided to DOE by Philips. DOE determined the products were noncompliant based on testing information provided by the company. Philips must immediately notify each

  20. The influence of interfaces on properties of thin-film inorganic structural isomers containing SnSeNbSe? Subunits

    SciTech Connect (OSTI)

    Alemayehu, Matti B.; Falmbigl, Matthias; Ta, Kim; Johnson, David C.

    2015-08-28

    Inorganic isomers ([SnSe]1+?)m(NbSe?)n([SnSe]1+?)p(NbSe?)q([SnSe]1+?)r(NbSe?)s where m, n, p, q, r, and s are integers and m + p + r = n + q + s = 4 were prepared using the modulated elemental reactant technique. This series of all six possible isomers provides an opportunity to study the influence of interface density on properties while maintaining the same unit cell size and composition. As expected, all six compounds were observed to have the same atomic compositions and an almost c-axis lattice parameter of ?4.90 (5) nm, with a slight trend in the c-axis lattice parameter correlated with the different number of interfaces in the isomers: two, four and six. The structures of the constituents in the ab-plane were independent of one another, confirming the nonepitaxial relationship between them. The temperature dependent electrical resistivities revealed metallic behavior for all the six compounds. Surprisingly, the electrical resistivity at room temperature decreases with increasing number of interfaces. Hall measurements suggest this results from changes in carrier concentration, which increases with increasing thickness of the thickest SnSe block in the isomer. Carrier mobility scales with the thickness of the thickest NbSe? block due to increased interfacial scattering as the NbSe? blocks become thinner. The observed behavior suggests that the two constituents serve different purposes with respect to electrical transport. SnSe acts as a charge donor and NbSe? acts as the charge transport layer. This separation of function suggests that such heterostructures can be designed to optimize performance through choice of constituent, layer thickness, and layer sequence. A simplistic model, which predicts the properties of the complex isomers from a weighted sum of the properties of building blocks, was developed. A theoretical model is needed to predict the optimal compound for specific properties among the many potential compounds that can be prepared.

  1. First-principles studies on molecular beam epitaxy growth of GaAs1-xBix

    SciTech Connect (OSTI)

    Luo, Guangfu; Yang, Shujiang; Li, Jincheng; Arjmand, Mehrdad; Szlufarska, Izabela; Brown, April S.; Kuech, Thomas F.; Morgan, Dane

    2015-07-14

    We investigate the molecular beam epitaxy (MBE) growth of GaAs1-xBix film using density functional theory with spin-orbit coupling to understand the growth of this film, especially the mechanisms of Bi incorporation. We study the stable adsorption structures and kinetics of the incident molecules (As? molecule, Ga atom, Bi atom, and Bi? molecule) on the (2 x 1)-Gasub||Bi surface and a proposed q(1 x 1)-Gasub||AsAs surface has a quasi-(1 x 1) As layer above the Ga-terminated GaAs substrate and a randomly oriented As dimer layer on top. We obtain the desorption and diffusion barriers of the adsorbed molecules and also the reaction barriers of three key processes related to Bi evolution, namely, Bi incorporation, As/Bi exchange, and Bi clustering. The results help explain the experimentally observed dependence of Bi incorporation on the As/Ga ratio and growth temperature. Furthermore, we find that As? exchange with Bi of the (2 x 1)-Gasub||Bi surface is a key step controlling the kinetics of the Bi incorporation. Finally, we explore two possible methods to enhance the Bi incorporation, namely, replacing the MBE growth mode from codeposition of all fluxes with a sequential deposition of fluxes and applying asymmetric in-plane strain to the substrate.

  2. Heterojunctions of model CdTe/CdSe mixtures

    SciTech Connect (OSTI)

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-03-18

    We report on the strain behavior of compound mixtures of model group IIVI semiconductors. We use the StillingerWeber Hamiltonian that we recently introduced, specifically developed to model binary mixtures of group IIVI compounds such as CdTe and CdSe. We also employ molecular dynamics simulations to examine the behavior of thin sheets of material, bilayers of CdTe and CdSe. The lattice mismatch between the two compounds leads to a strong bending of the entire sheet, with about a 0.5 to 1 deflection between neighboring planes. To further analyze bilayer bending, we introduce a simple one-dimensional model and use energy minimization to find the angle of deflection. The analysis is equivalent to a least-squares straight line fit. We consider the effects of bilayers which are asymmetric with respect to the thickness of the CdTe and CdSe parts. We thus learn that the bending can be subdivided into four kinds depending on the compressive/tensile nature of each outer plane of the sheet. We use this approach to directly compare our findings with experimental results on the bending of CdTe/CdSe rods. To reduce the effects of the lattice mismatch we explore diffuse interfaces, where we mix (i.e. alloy) Te and Se, and estimate the strain response.

  3. Heterojunctions of model CdTe/CdSe mixtures

    SciTech Connect (OSTI)

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-03-18

    We report on the strain behavior of compound mixtures of model group II-VI semiconductors. We use the Stillinger-Weber Hamiltonian that we recently introduced, specifically developed to model binary mixtures of group II-VI compounds such as CdTe and CdSe. We also employ molecular dynamics simulations to examine the behavior of thin sheets of material, bilayers of CdTe and CdSe. The lattice mismatch between the two compounds leads to a strong bending of the entire sheet, with about a 0.5 to 1° deflection between neighboring planes. To further analyze bilayer bending, we introduce a simple one-dimensional model and use energy minimization to find the angle of deflection. The analysis is equivalent to a least-squares straight line fit. We consider the effects of bilayers which are asymmetric with respect to the thickness of the CdTe and CdSe parts. We thus learn that the bending can be subdivided into four kinds depending on the compressive/tensile nature of each outer plane of the sheet. We use this approach to directly compare our findings with experimental results on the bending of CdTe/CdSe rods. To reduce the effects of the lattice mismatch we explore diffuse interfaces, where we mix (i.e. alloy) Te and Se, and estimate the strain response.

  4. EMPaSE: an Extensible Multi-Paradigm Simulation Environment

    Energy Science and Technology Software Center (OSTI)

    2010-08-05

    EMPaSE is a hierarchical, extensible, modular modeling environment for developing and running hybrid simulations of sequential-modular, systems dynamics, discrete-event, and agent-based paradigms. It contains two principle components: a multi-paradigm simulation engine and a graphical user interface. EMPaSE models are defined through a hierarchically-defined set of computational modules that define the simulation logic. Inter-module communication occurs through two complimentary systems: pull-based "ports" for general computation patterns and push-based "plugs" for event processing. Entities (i.e. agents) withinmore » the simulation operate within an abstract multi-network environment. The EMPaSE simulation engine is designed around a flexible plug-in architecture, allowing simulations to import computational modules, engine customizations, and interfaces to external applications from independent plug-in libraries. The EMPaSE GUI environment provides an environment for graphically constructing, executing, and debugging EMPaSE models. As with the simulation engine, the GUI is constructed on top of an extensible architecture that supports rapid customization of the user experience through external plug-in libraries.« less

  5. Heterojunctions of model CdTe/CdSe mixtures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-03-18

    We report on the strain behavior of compound mixtures of model group II-VI semiconductors. We use the Stillinger-Weber Hamiltonian that we recently introduced, specifically developed to model binary mixtures of group II-VI compounds such as CdTe and CdSe. We also employ molecular dynamics simulations to examine the behavior of thin sheets of material, bilayers of CdTe and CdSe. The lattice mismatch between the two compounds leads to a strong bending of the entire sheet, with about a 0.5 to 1° deflection between neighboring planes. To further analyze bilayer bending, we introduce a simple one-dimensional model and use energy minimization tomore » find the angle of deflection. The analysis is equivalent to a least-squares straight line fit. We consider the effects of bilayers which are asymmetric with respect to the thickness of the CdTe and CdSe parts. We thus learn that the bending can be subdivided into four kinds depending on the compressive/tensile nature of each outer plane of the sheet. We use this approach to directly compare our findings with experimental results on the bending of CdTe/CdSe rods. To reduce the effects of the lattice mismatch we explore diffuse interfaces, where we mix (i.e. alloy) Te and Se, and estimate the strain response.« less

  6. GE Appliances: Order (2012-SE-1403) | Department of Energy

    Energy Savers [EERE]

    Appliances: Order (2012-SE-1403) GE Appliances: Order (2012-SE-1403) October 3, 2012 DOE ordered GE Appliances, a Division of General Electric Company to pay a $63,000 civil penalty after finding GE had privately labeled and distributed in commerce in the U.S. the 4-cubic-foot capacity refrigerator basic model SMR04GAZCS, which includes models SMR04GAZACS and SMR04GAZBCS. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and GE. PDF icon GE Appliances: Order

  7. Utility: Order (2016-SE-42003) | Department of Energy

    Energy Savers [EERE]

    SE-42003) Utility: Order (2016-SE-42003) March 1, 2016 DOE ordered Utility Refrigerator to pay a $200 civil penalty after finding Utility manufactured and distributed in commerce in the U.S. 1 unit of a Utility brand commercial refrigerator, model PT-R-75-SS-3S-3S-N. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and Utility. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do

  8. Sunshine Lighting: Order (2014-SE-54008) | Department of Energy

    Energy Savers [EERE]

    Sunshine Lighting: Order (2014-SE-54008) Sunshine Lighting: Order (2014-SE-54008) July 7, 2015 DOE ordered Lighting & Supplies, Inc. d/b/a Sunshine Lighting Company ("Sunshine") to pay a $150,000 civil penalty after finding Sunshine had manufactured and distributed in commerce in the U.S. 1780 units of Sunlite brand basic model 04937-SU and 1134 units of basic model 04952-SU, noncompliant metal halide lamp fixtures. The Order adopted a Compromise Agreement, which reflected

  9. Excited-State Relaxation in PbSe Quantum Dots

    SciTech Connect (OSTI)

    An, J. M.; Califano, M.; Franceschetti, A.; Zunger, A.

    2008-01-01

    In solids the phonon-assisted, nonradiative decay from high-energy electronic excited states to low-energy electronic excited states is picosecond fast. It was hoped that electron and hole relaxation could be slowed down in quantum dots, due to the unavailability of phonons energy matched to the large energy-level spacings ('phonon-bottleneck'). However, excited-state relaxation was observed to be rather fast ({le}1 ps) in InP, CdSe, and ZnO dots, and explained by an efficient Auger mechanism, whereby the excess energy of electrons is nonradiatively transferred to holes, which can then rapidly decay by phonon emission, by virtue of the densely spaced valence-band levels. The recent emergence of PbSe as a novel quantum-dot material has rekindled the hope for a slow down of excited-state relaxation because hole relaxation was deemed to be ineffective on account of the widely spaced hole levels. The assumption of sparse hole energy levels in PbSe was based on an effective-mass argument based on the light effective mass of the hole. Surprisingly, fast intraband relaxation times of 1-7 ps were observed in PbSe quantum dots and have been considered contradictory with the Auger cooling mechanism because of the assumed sparsity of the hole energy levels. Our pseudopotential calculations, however, do not support the scenario of sparse hole levels in PbSe: Because of the existence of three valence-band maxima in the bulk PbSe band structure, hole energy levels are densely spaced, in contradiction with simple effective-mass models. The remaining question is whether the Auger decay channel is sufficiently fast to account for the fast intraband relaxation. Using the atomistic pseudopotential wave functions of Pb{sub 2046}Se{sub 2117} and Pb{sub 260}Se{sub 249} quantum dots, we explicitly calculated the electron-hole Coulomb integrals and the P {yields} S electron Auger relaxation rate. We find that the Auger mechanism can explain the experimentally observed P {yields} S intraband decay time scale without the need to invoke any exotic relaxation mechanisms.

  10. The Usefulness of Bi-Level Switching; Original Technical Note: November 1998. Revised August, 1999

    SciTech Connect (OSTI)

    Building Technologies Department

    1998-11-01

    California's Title 24 Energy Efficiency Building Standard requires multiple lighting level control in all individual offices. Usually, this requirement is fulfilled using bi-level switching. With bi-level switching, each office occupant is provided with two wall switches near the doorway to control their lights. In a typical installation, one switch would control 1/3 of the fluorescent lamps in the ceiling lighting system, while the other switch would control the remaining 2/3 of the lamps. This allows four possible light levels: OFF, 1/3, 2/3 and FULL lighting. Because it has been required by building code since 1983, bi-level switching is common in California office buildings. However, there is no published evidence showing that occupants sometimes use just one switch rather than just switching on both switches when entering the room. Consequently, some have questioned whether bi-level switching is a necessary or desirable requirement for typical office buildings. In fact, the draft national standard, ASHRAE Standard 90.1-1989K apparently does not require bi-level switching at all.

  11. Human papillomavirus 16 E5 induces bi-nucleated cell formation by cell-cell fusion

    SciTech Connect (OSTI)

    Hu Lulin; Plafker, Kendra; Vorozhko, Valeriya; Zuna, Rosemary E.; Hanigan, Marie H.; Gorbsky, Gary J.; Plafker, Scott M.; Angeletti, Peter C.; Ceresa, Brian P.

    2009-02-05

    Human papillomaviruses (HPV) 16 is a DNA virus encoding three oncogenes - E5, E6, and E7. The E6 and E7 proteins have well-established roles as inhibitors of tumor suppression, but the contribution of E5 to malignant transformation is controversial. Using spontaneously immortalized human keratinocytes (HaCaT cells), we demonstrate that expression of HPV16 E5 is necessary and sufficient for the formation of bi-nucleated cells, a common characteristic of precancerous cervical lesions. Expression of E5 from non-carcinogenic HPV6b does not produce bi-nucleate cells. Video microscopy and biochemical analyses reveal that bi-nucleates arise through cell-cell fusion. Although most E5-induced bi-nucleates fail to propagate, co-expression of HPV16 E6/E7 enhances the proliferation of these cells. Expression of HPV16 E6/E7 also increases bi-nucleated cell colony formation. These findings identify a new role for HPV16 E5 and support a model in which complementary roles of the HPV16 oncogenes lead to the induction of carcinogenesis.

  12. Highly Reversible Mg Insertion in Nanostructured Bi for Mg Ion Batteries

    SciTech Connect (OSTI)

    Shao, Yuyan; Gu, Meng; Li, Xiaolin; Nie, Zimin; Zuo, Pengjian; Li, Guosheng; Liu, Tianbiao L.; Xiao, Jie; Cheng, Yingwen; Wang, Chong M.; Zhang, Jiguang; Liu, Jun

    2014-01-08

    Rechargeable magnesium batteries have attracted wide attention for energy storage. Currently, most studies focus on Mg metal as the anode, but this approach is still limited by the properties of the electrolyte and poor control of the Mg plating/stripping processes.1,2 Here we report the synthesis and application of Bi nanotubes as a high performance anode material for rechargeable Mg ion batteries. The nanostructured Bi anode delivers a high reversible specific capacity (350 mAh/gBi, or 3430 mAh/cm3 Bi), excellent stability, and high columbic efficiency (95 % initial and very close to 100% afterwards). The good performance is attributed to the unique properties of in-situ formed, interconnected nanoporous bismuth. Such nanostructures can effectively accommodate the large volume change without losing electric contact and significantly reduce diffusion length for Mg2+. Significantly, the nanostructured Bi anode can be used with conventional electrolytes which will open new opportunities to study Mg ion battery chemistry and further improve the properties. The performance and the stability of a full cell Mg ion battery have been demonstrated with conventional electrolytes. This work suggests that other high energy density alloy compounds may also be considered for Mg-ion chemistry for high capacity electrode materials.

  13. Controlled synthesis of T-shaped BiVO{sub 4} and enhanced visible light responsive photocatalytic activity

    SciTech Connect (OSTI)

    Dong, Shuying; Yu, Chongfei; Li, Yukun; Li, Yihui; Sun, Jianhui; Geng, Xiaofei

    2014-03-15

    A novel T-shaped BiVO{sub 4} microcrystal photocatalyst was successfully synthesized by the hydrothermal method with the aid of a structure-directing surfactant SDBS in the present study. Having received well characterization with the aid of various techniques and the results showed that the SDBS greatly changed the microstructure of BiVO{sub 4}, which had a unique T shape and belonged to the monoclinic family. The fast exchange dynamics between the surfactants bound to the Bi{sup 3+} seed surface and the free VO{sub 3}{sup ?} in the solution significantly increase the rate of heterogeneous nucleation. In addition, the photocatalytic activity of the prepared T-shaped BiVO{sub 4} was evaluated by the degradation of Methylene Blue solution under visible light irradiation, 17% and 47% higher decolorization rates than the commercial P25 and BiVO{sub 4} synthesized without SDBS, respectively. Meanwhile, it has been found that the degradation kinetics of MB fitted the pseudo-first-order kinetics and the T-shaped BiVO{sub 4} also displayed high photocatalytic performance for metronidazole degradation. -- Graphical abstract: H{sub 2}O{sub 2} molecules function as electron trapping reagent to react with e{sup ?} to enhance the photocatalytic degradation efficiency of MB in the BiVO{sub 4}/H{sub 2}O{sub 2} system under visible light irradiation. Highlights: T-shaped BiVO{sub 4} was synthesized using SDBS as a structure-directing surfactant. SDBS greatly changed the microstructure of BiVO{sub 4}. The T-shaped BiVO{sub 4} had a better visible-light photocatalytic activity. Degradation kinetics of MB by BiVO{sub 4} fitted the pseudo-first-order kinetics.

  14. Reverse Monte Carlo simulation of Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} glasses

    SciTech Connect (OSTI)

    Abdel-Baset, A. M.; Rashad, M.; Moharram, A. H.

    2013-12-16

    Two-dimensional Monte Carlo of the total pair distribution functions g(r) is determined for Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} alloys, and then it used to assemble the three-dimensional atomic configurations using the reverse Monte Carlo simulation. The partial pair distribution functions g{sub ij}(r) indicate that the basic structure unit in the Se{sub 80}Te{sub 15}Sb{sub 5} glass is di-antimony tri-selenide units connected together through Se-Se and Se-Te chain. The structure of Se{sub 80}Te{sub 20} alloys is a chain of Se-Te and Se-Se in addition to some rings of Se atoms.

  15. Hydrogen in polar intermetallics: Syntheses and structures of the ternary Ca5Bi3D0.93, Yb5Bi3Hx, and Sm5Bi3H~1 by powder neutron or single crystal X-ray diffraction

    SciTech Connect (OSTI)

    Leon-Escamilla, E. Alejandro; Dervenagas, Panagiotis; Stasis, Constantine; Corbett, John D.

    2010-01-01

    The syntheses of the title compounds are described in detail. Structural characterizations from refinements of single crystal X-ray diffraction data for Yb{sub 5}Bi{sub 3}H{sub x} and Sm{sub 5}Bi{sub 3}H{sub 1} and of powder neutron diffraction data for Ca{sub 5}Bi{sub 3}D{sub 0.93(3)} are reported. These confirm that all three crystallize with the heavy atom structure type of {beta}-Yb{sub 5}Sb{sub 3}, and the third gives the first proof that the deuterium lies in the center of nominal calcium tetrahedra, isostructural with the Ca{sub 5}Sb{sub 3}F-type structure. These Ca and Yb phases are particularly stable with respect to dissociation to Mn{sub 5}Si{sub 3}-type product plus H{sub 2}. Some contradictions in the literature regarding Yb{sub 5}Sb{sub 3} and Yb{sub 5}Sb{sub 3}H{sub x} phases are considered in terms of adventitious hydrogen impurities that are generated during reactions in fused silica containers at elevated temperatures.

  16. Orbitally-driven giant phonon anharmonicity in SnSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Chen W.; Hong, Jiawang; May, Andrew F.; Bansal, Dipanshu; Chi, Songxue; Hong, Tao; Ehlers, Georg; Delaire, Olivier A.

    2015-10-19

    We understand that elementary excitations and their couplings in condensed matter systems is critical to develop better energy-conversion devices. In thermoelectric materials, the heat-to-electricity conversion efficiency is directly improved by suppressing the propagation of phonon quasiparticles responsible for macroscopic thermal transport. The material with the current record for thermoelectric conversion efficiency, SnSe, achieves an ultra-low thermal conductivity, but the mechanism enabling this strong phonon scattering remains largely unknown. Using inelastic neutron scattering measurements and first-principles simulations, we mapped the four-dimensional phonon dispersion surfaces of SnSe, and revealed the origin of ionic-potential anharmonicity responsible for the unique properties of SnSe. Wemore » show that the giant phonon scattering arises from an unstable electronic structure, with orbital interactions leading to a ferroelectric-like lattice instability. Our results provide a microscopic picture connecting electronic structure and phonon anharmonicity in SnSe, and offers precious insights on how electron-phonon and phononphonon interactions may lead to the realization of ultra-low thermal conductivity.« less

  17. Orbitally-driven giant phonon anharmonicity in SnSe

    SciTech Connect (OSTI)

    Li, Chen W.; Hong, Jiawang; May, Andrew F.; Bansal, Dipanshu; Chi, Songxue; Hong, Tao; Ehlers, Georg; Delaire, Olivier A.

    2015-10-19

    We understand that elementary excitations and their couplings in condensed matter systems is critical to develop better energy-conversion devices. In thermoelectric materials, the heat-to-electricity conversion efficiency is directly improved by suppressing the propagation of phonon quasiparticles responsible for macroscopic thermal transport. The material with the current record for thermoelectric conversion efficiency, SnSe, achieves an ultra-low thermal conductivity, but the mechanism enabling this strong phonon scattering remains largely unknown. Using inelastic neutron scattering measurements and first-principles simulations, we mapped the four-dimensional phonon dispersion surfaces of SnSe, and revealed the origin of ionic-potential anharmonicity responsible for the unique properties of SnSe. We show that the giant phonon scattering arises from an unstable electronic structure, with orbital interactions leading to a ferroelectric-like lattice instability. Our results provide a microscopic picture connecting electronic structure and phonon anharmonicity in SnSe, and offers precious insights on how electron-phonon and phononphonon interactions may lead to the realization of ultra-low thermal conductivity.

  18. Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2Te3

    SciTech Connect (OSTI)

    Siemons, W.

    2010-02-24

    Three-dimensional topological insulators are a new state of quantum matter with a bulk gap and odd number of relativistic Dirac fermions on the surface. By investigating the surface state of Bi{sub 2}Te{sub 3} with angle-resolved photoemission spectroscopy, we demonstrate that the surface state consists of a single nondegenerate Dirac cone. Furthermore, with appropriate hole doping, the Fermi level can be tuned to intersect only the surface states, indicating a full energy gap for the bulk states. Our results establish that Bi{sub 2}Te{sub 3} is a simple model system for the three-dimensional topological insulator with a single Dirac cone on the surface. The large bulk gap of Bi{sub 2}Te{sub 3} also points to promising potential for high-temperature spintronics applications.

  19. Enhanced spin Hall effect by electron correlations in CuBi alloys

    SciTech Connect (OSTI)

    Gu, Bo Xu, Zhuo; Mori, Michiyasu; Maekawa, Sadamichi; Ziman, Timothy

    2015-05-07

    A recent experiment in CuBi alloys obtained a large spin Hall angle (SHA) of ?0.24 (Niimi et al., Phys. Rev. Lett. 109, 156602 (2012)). We find that the SHA can be dramatically enhanced by Bi impurities close to the Cu surface. The mechanisms of this enhancement are two-fold. One is that the localized impurity state on surface has a decreased hybridization and combined with Coulomb correlation effect. The other comes from the low-dimensional state of conduction electrons on surface, which results in a further enhancement of skew scattering by impurities. Furthermore, we note that a discrepancy in sign of SHA between the experiment and previous theories is simply caused by different definitions of SHA. This re-establishes skew scattering as the essential mechanism underlying the spin Hall effect in CuBi alloys.

  20. Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Klein, C.; Vollmers, N. J.; Gerstmann, U.; Zahl, P.; Lukermann, D.; Jnawali, G.; Pfnur, H.; Sutter, P.; Tegenkamp, C.; Schmidt, W. G.; et al

    2015-05-27

    By combining scanning tunneling microscopy with density functional theory it is shown that the Bi(111) surface provides a well-defined incorporation site in the first bilayer that traps highly coordinating atoms such as transition metals (TMs) or noble metals. All deposited atoms assume exactly the same specific sevenfold coordinated subsurface interstitial site while the surface topography remains nearly unchanged. Notably, 3d TMs show a barrier-free incorporation. The observed surface modification by barrier-free subsorption helps to suppress aggregation in clusters. Thus, it allows a tuning of the electronic properties not only for the pure Bi(111) surface, but may also be observed formore » topological insulators formed by substrate-stabilized Bi bilayers.« less

  1. Structural and dielectric properties of Nd/Ca co-doped bi-ferrite multiferroics

    SciTech Connect (OSTI)

    Kumar, Ashwini E-mail: ashu.dhanda@gmail.com; Sharma, Poorva E-mail: ashu.dhanda@gmail.com; Varshney, Dinesh E-mail: ashu.dhanda@gmail.com

    2014-04-24

    Single-phase polycrystalline samples of Bi{sub 0.8}Nd{sub 0.2−x}Ca{sub x}FeO{sub 3} (x = 0.0, 0.1) were synthesized by chemical coprecipitation method. X-ray diffraction patterns accompanied by Rietveld-refined crystal structure parameters reveal the phase transition of Bi{sub 0.8}Nd{sub 0.1}Ca{sub 0.1}FeO{sub 3} with rhombohedral R3c symmetry to triclinic structure of Bi{sub 0.8}Nd{sub 0.2}FeO{sub 3} sample. Frequency dependence of dielectric constant (ε') and dielectric loss (tanδ), infers enhancement of both ε' (tanδ) in narrow band gap of Nd/Ca co-doped BFO as compare to wide band pristine BFO.

  2. Field-dependent magnetization of BiFeO3 in ultrathin La0.7Sr0.3MnO3/BiFeO3

    Office of Scientific and Technical Information (OSTI)

    superlattice (Journal Article) | SciTech Connect Journal Article: Field-dependent magnetization of BiFeO3 in ultrathin La0.7Sr0.3MnO3/BiFeO3 superlattice Citation Details In-Document Search This content will become publicly available on December 2, 2016 Title: Field-dependent magnetization of BiFeO3 in ultrathin La0.7Sr0.3MnO3/BiFeO3 superlattice We report the observation of field-induced magnetization of BiFeO3 (BFO) in an ultrathin La0.7Sr0.3MnO3 (LSMO)/BFO superlattice using polarized

  3. Evolution of the electronic structure in ultrathin Bi(111) films (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Evolution of the electronic structure in ultrathin Bi(111) films Citation Details In-Document Search Title: Evolution of the electronic structure in ultrathin Bi(111) films Authors: Miao, Lin ; Yao, Meng-Yu ; Ming, Wenmei ; Zhu, Fengfeng ; Han, C. Q. ; Wang, Z. F. ; Guan, D. D. ; Gao, C. L. ; Liu, Canhua ; Liu, Feng ; Qian, Dong ; Jia, Jin-Feng Publication Date: 2015-05-12 OSTI Identifier: 1179722 Grant/Contract Number: AC02-05CH11231; FG02-04ER46148 Type:

  4. Interfacial effects revealed by ultrafast relaxation dynamics in BiFeO 3 /

    Office of Scientific and Technical Information (OSTI)

    YBa 2 Cu 3 O 7 bilayers (Journal Article) | SciTech Connect Interfacial effects revealed by ultrafast relaxation dynamics in BiFeO 3 / YBa 2 Cu 3 O 7 bilayers Citation Details In-Document Search This content will become publicly available on February 11, 2017 Title: Interfacial effects revealed by ultrafast relaxation dynamics in BiFeO 3 / YBa 2 Cu 3 O 7 bilayers Authors: Springer, D. ; Nair, Saritha K. ; He, Mi ; Lu, C. L. ; Cheong, S. A. ; Wu, T. ; Panagopoulos, C. ; Chia, Elbert E. M. ;

  5. Interplay of octahedral tilts and polar order in BiFeO3 films (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Interplay of octahedral tilts and polar order in BiFeO3 films Citation Details In-Document Search Title: Interplay of octahedral tilts and polar order in BiFeO3 films Authors: Kim, Young Min [1] ; Kumar, Amit [1] ; Hatt, Alison J [2] ; Morozovska, A. N. [3] ; Tselev, Alexander [1] ; Biegalski, Michael D [1] ; Ivanov, Ilia N [1] ; Eliseev, E. A. [3] ; Pennycook, Stephen J [1] ; Rondinelli, James [4] ; Kalinin, Sergei V [1] ; Borisevich, Albina Y [1] + Show Author

  6. Synthesis of highly phase pure (Bi, Pb)-Sr-Ca-Cu-O superconductor

    DOE Patents [OSTI]

    Dorris, Stephen E.; Poeppel, Roger B.; Prorok, Barton C.; Lanagan, Michael T.; Maroni, Victor A.

    1994-01-01

    An article and method of manufacture of (Bi,Pb)-Sr-Ca-Cu-O superconductor. The superconductor is manufactured by preparing a first powdered mixture of bismuth oxide, lead oxide, strontium carbonate, calcium carbonate and copper oxide. A second powdered mixture is then prepared of strontium carbonate, calcium carbonate and copper oxide. The mixtures are calcined separately with the two mixtures then combined. The resulting combined mixture is then subjected to a powder in tube deformation and thermal processing to produce a substantially phase pure (Bi,Pb)-Sr-Ca-Cu-O superconductor.

  7. Synthesis of highly phase pure (Bi, Pb)-Sr-Ca-Cu-O superconductor

    DOE Patents [OSTI]

    Dorris, S.E.; Poeppel, R.B.; Prorok, B.C.; Lanagan, M.T.; Maroni, V.A.

    1994-10-11

    An article and method of manufacture of (Bi,Pb)-Sr-Ca-Cu-O superconductor are disclosed. The superconductor is manufactured by preparing a first powdered mixture of bismuth oxide, lead oxide, strontium carbonate, calcium carbonate and copper oxide. A second powdered mixture is then prepared of strontium carbonate, calcium carbonate and copper oxide. The mixtures are calcined separately with the two mixtures then combined. The resulting combined mixture is then subjected to a powder in tube deformation and thermal processing to produce a substantially phase pure (Bi,Pb)-Sr-Ca-Cu-O superconductor. 5 figs.

  8. Photoinduced changes of the chemical potential in superconducting Bi 2 Sr 2

    Office of Scientific and Technical Information (OSTI)

    CaCu 2 O 8 + δ (Journal Article) | SciTech Connect Photoinduced changes of the chemical potential in superconducting Bi 2 Sr 2 CaCu 2 O 8 + δ Citation Details In-Document Search This content will become publicly available on October 11, 2016 Title: Photoinduced changes of the chemical potential in superconducting Bi 2 Sr 2 CaCu 2 O 8 + δ Authors: Miller, Tristan L. ; Smallwood, Christopher L. ; Zhang, Wentao ; Eisaki, Hiroshi ; Orenstein, Joseph ; Lanzara, Alessandra Publication Date:

  9. Time-reversal-invariant topological superconductivity in n -doped BiH

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Time-reversal-invariant topological superconductivity in n -doped BiH Citation Details In-Document Search Title: Time-reversal-invariant topological superconductivity in n -doped BiH Authors: Yang, Fan ; Liu, Cheng-Cheng ; Zhang, Yu-Zhong ; Yao, Yugui ; Lee, Dung-Hai Publication Date: 2015-04-23 OSTI Identifier: 1178596 Grant/Contract Number: AC02-05CH11231 Type: Publisher's Accepted Manuscript Journal Name: Physical Review B Additional Journal

  10. Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS

    SciTech Connect (OSTI)

    Fei, Ruixiang; Yang, Li; Li, Wenbin; Li, Ju

    2015-10-26

    We predict enormous, anisotropic piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe, and GeS. Using first-principle simulations based on the modern theory of polarization, we find that their piezoelectric coefficients are about one to two orders of magnitude larger than those of other 2D materials, such as MoS{sub 2} and GaSe, and bulk quartz and AlN which are widely used in industry. This enhancement is a result of the unique “puckered” C{sub 2v} symmetry and electronic structure of monolayer group IV monochalcogenides. Given the achieved experimental advances in the fabrication of monolayers, their flexible character, and ability to withstand enormous strain, these 2D structures with giant piezoelectric effects may be promising for a broad range of applications such as nano-sized sensors, piezotronics, and energy harvesting in portable electronic devices.

  11. Bandgap and optical absorption edge of GaAs{sub 1?x}Bi{sub x} alloys with 0?

    SciTech Connect (OSTI)

    Masnadi-Shirazi, M.; Lewis, R. B.; Bahrami-Yekta, V.; Tiedje, T.; Chicoine, M.; Servati, P.

    2014-12-14

    The compositional dependence of the fundamental bandgap of pseudomorphic GaAs{sub 1?x}Bi{sub x} layers on GaAs substrates is studied at room temperature by optical transmission and photoluminescence spectroscopies. All GaAs{sub 1?x}Bi{sub x} films (0???x???17.8%) show direct optical bandgaps, which decrease with increasing Bi content, closely following density functional theory predictions. The smallest measured bandgap is 0.52?eV (?2.4??m) at 17.8% Bi. Extrapolating a fit to the data, the GaAs{sub 1?x}Bi{sub x} bandgap is predicted to reach 0?eV at 35% Bi. Below the GaAs{sub 1?x}Bi{sub x} bandgap, exponential absorption band tails are observed with Urbach energies 36 times larger than that of bulk GaAs. The Urbach parameter increases with Bi content up to 5.5% Bi, and remains constant at higher concentrations. The lattice constant and Bi content of GaAs{sub 1?x}Bi{sub x} layers (0?Bi is estimated to be 6.33??0.05?, from extrapolation of the Rutherford backscattering spectrometry and x-ray diffraction data.

  12. Epitaxial growth of CZT(S,Se) on silicon

    DOE Patents [OSTI]

    Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu

    2016-03-15

    Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

  13. Deformation potentials of CdSe quantum dots

    SciTech Connect (OSTI)

    Li, Jingbo; Wang, Lin-Wang

    2004-06-02

    The size dependent deformation potentials of CdSe quantum dots are studied by first principle and semi-empirical pseudopotentials calculations. They find that the amplitude of the quantum dot deformation potential is only slightly larger than the bulk value, and this increase is mostly caused by the off {Lambda} point deformation potentials in the bulk, which are larger in amplitude than the {Lambda} point deformation potential.

  14. Quantum confined acceptors and donors in InSe nanosheets

    SciTech Connect (OSTI)

    Mudd, G. W.; Patan, A. Makarovsky, O.; Eaves, L.; Kudrynskyi, Z. R.; Kovalyuk, Z. D.; Fay, M. W.; Zlyomi, V.; Falko, V.

    2014-12-01

    We report on the radiative recombination of photo-excited carriers bound at native donors and acceptors in exfoliated nanoflakes of nominally undoped rhombohedral ?-polytype InSe. The binding energies of these states are found to increase with the decrease in flake thickness, L. We model their dependence on L using a two-dimensional hydrogenic model for impurities and show that they are strongly sensitive to the position of the impurities within the nanolayer.

  15. Variable mode bi-directional and uni-directional computer communication system

    DOE Patents [OSTI]

    Cornett, Frank N.; Jenkins, Philip N.; Bowman, Terrance L.; Placek, Joseph M.; Thorson, Gregory M.

    2004-12-14

    A variable communication systems comprising a plurality of transceivers and a control circuit connected to the transceivers to configure the transceivers to operate in a bi-directional mode and a uni-directional mode at different times using different transfer methods to transfer data.

  16. Itinerant effects and enhanced magnetic interactions in Bi-based multilayer cuprates

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dean, M. P. M.; James, A. J. A.; Walters, A. C.; Bisogni, V.; Jarrige, I.; Hücker, M.; Giannini, E.; Fujita, M.; Pelliciari, J.; Huang, Y. B.; et al

    2014-12-04

    The cuprate high temperature superconductors exhibit a pronounced trend in which the superconducting transition temperature, T c, increases with the number of CuO₂ planes, n, in the crystal structure. We compare the magnetic excitation spectrum of Bi₂₊xSr₂₋xCuO₆+δ (Bi-2201) and Bi₂Sr₂Ca₂Cu₃O₁₀₊δ (Bi-2223), with n = 1 and n = 3 respectively, using Cu L₃-edge resonant inelastic x-ray scattering (RIXS). Near the anti-nodal zone boundary we find the paramagnon energy in Bi-2223 is substantially higher than that in Bi-2201, indicating that multilayer cuprates host stronger effective magnetic exchange interactions, providing a possible explanation for the Tc vs. n scaling. In contrast, themore » nodal direction exhibits very strongly damped, almost non-dispersive excitations. As a result, we argue that this implies that the magnetism in the doped cuprates is partially itinerant in nature.« less

  17. Preparation of Bi-Sr-Ca-Cu-O superconductors from oxide-glass precursors

    DOE Patents [OSTI]

    Hinks, David G.; Capone, II, Donald W.

    1992-01-01

    A superconductor and precursor therefor from oxide mixtures of Ca, Sr, Bi and Cu. Glass precursors quenched to elevated temperatures result in glass free of crystalline precipitates having enhanced mechanical properties. Superconductors are formed from the glass precursors by heating in the presence of oxygen to a temperature below the melting point of the glass.

  18. Enhanced irreversibility by crystal defects in the Bi-Sr-Ca-Cu-O system

    SciTech Connect (OSTI)

    Salem-Sugui, S. Jr.; Shi, Donglu; McFarland, S.E.

    1991-04-01

    We measured magnetic irreversibility, H*(T), in liquid-quenched Bi-Sr-Ca-Cu-O samples with various microstructures at high applied field (up to 7 T). We found that H*(T) is considerably increased in the Bi{sub 2}Sr{sub 2}Ca{sub 3}Cu{sub 4}O{sub x} (2234) sample with a large amount of crystal defects, including severe lattice distortion and calcium and copper rich precipitates. We argue that the lattice distortion may affect the degree of anisotropy and the Josephson coupling between the Cu-O layers, which in turn enhance the irreversibility in the Bi-Sr-Ca-Cu-O system. A critical current density, J{sub c}, of 8 {times} 10{sup 4} A/cm{sup 2} at 8 kG and 40 K was obtained in the 2234 sample with many defects, while the J{sub c} dropped significantly at the same temperature and field in the near stoichiometry Bi{sub 2}Sr{sub 2}Ca{sub 2}Cu{sub 3}O{sub x} (2223) sample with a uniform microstructure.

  19. American Ref-Fuel of SE CT Biomass Facility | Open Energy Information

    Open Energy Info (EERE)

    Ref-Fuel of SE CT Biomass Facility Jump to: navigation, search Name American Ref-Fuel of SE CT Biomass Facility Facility American Ref-Fuel of SE CT Sector Biomass Facility Type...

  20. V-181: Oracle Java SE Critical Patch Update Advisory - June 2013...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    1: Oracle Java SE Critical Patch Update Advisory - June 2013 V-181: Oracle Java SE Critical Patch Update Advisory - June 2013 June 19, 2013 - 1:06am Addthis PROBLEM: Oracle Java SE...

  1. Shock compression behavior of bi-material powder composites with disparate melting temperatures

    SciTech Connect (OSTI)

    Sullivan, Kyle T.; Swift, Damian; Barham, Matthew; Stlken, James; Kuntz, Joshua; Kumar, Mukul

    2014-01-14

    Laser driven experiments were used to investigate the shock compression behavior of powder processed Bismuth/Tungsten (Bi/W) composite samples. The constituents provide different functionality to the composite behavior as Bi could be shock melted at the pressures attained in this work, while the W could not. Samples were prepared by uniaxial pressing, and the relative density was measured as a function of particle size, applied pressure, and composition for both hot and cold pressing conditions. This resulted in sample densities between 73% and 99% of the theoretical maximum density, and also noticeable differences in microstructure in the hot and cold pressed samples. The compression waves were generated with a 1.3 1.3?mm square spot directly onto the surface of the sample, using irradiances between 10{sup 12} and 10{sup 13}?W/cm{sup 2}, which resulted in calculated peak pressures between 50 and 150?GPa within a few micrometers. Sample recovery and post-mortem analysis revealed the formation of a crater on the laser drive surface, and the depth of this crater corresponded to the depth to which the Bi had been melted. The melt depth was found to be primarily a function of residual porosity and composition, and ranged from 167 to 528??m. In general, a higher porosity led to a larger melt depth. Direct numerical simulations were performed, and indicated that the observed increase in melt depth for low-porosity samples could be largely attributed to increased heating associated with work done for pore collapse. However, the relative scaling was sensitive to composition, with low volume fraction Bi samples exhibiting a much stronger dependence on porosity than high Bi content samples. Select samples were repeated using an Al foil ablator, but there were no noticeable differences ensuring that the observed melting was indeed pressure-driven and was not a result of direct laser heating. The resultant microstructures and damage near the spall surface were also investigated qualitatively.

  2. Insulation and Heat Treatment of Bi-2212 Wire for Wind-and-React Coils

    SciTech Connect (OSTI)

    Peter K. F. Hwang

    2007-10-22

    Higher Field Magnets demand higher field materials such as Bi-2212 round superconducting wire. The Bi-2212 wire manufacture process depends on the coil fabrication method and wire insulation material. Considering the wind-and-react method, the coil must unifirmly heated to the melt temperature and uniformly cooled to the solidification temperature. During heat treat cycle for tightly wound coils, the leakage melt from conductor can chemically react with insulation on the conductor and creat short turns in the coils. In this research project, conductor, insulation, and coils are made to systemically study the suitable insulation materials, coil fabrication method, and heat treatment cycles. In this phase I study, 800 meters Bi-2212 wire with 3 different insulation materials have been produced. Best insulation material has been identified after testing six small coils for insulation integrity and critical current at 4.2 K. Four larger coils (2" dia) have been also made with Bi-2212 wrapped with best insulation and with different heattreatment cycle. These coils were tested for Ic in a 6T background field and at 4.2 K. The test result shows that Ic from 4 coils are very close to short samples (1 meter) result. It demonstrates that HTS coils can be made with Bi-2212 wire with best insulation consistently. Better wire insulation, improving coil winding technique, and wire manufacture process can be used for a wide range of high field magnet application including acclerators such as Muon Collider, fusion energy research, NMR spectroscopy, MRI, and other industrial magnets.

  3. Magnetic properties of proton irradiated BiFeO{sub 3}

    SciTech Connect (OSTI)

    Han, Seungkyu; Jin Kim, Sam; Sung Kim, Chul

    2013-05-07

    The crystal structure and magnetic properties of BiFeO{sub 3} samples, proton-irradiated with 0, 10, and 20 pC/{mu}m{sup 2}, were investigated with x-ray diffraction (XRD), vibrating sample magnetometer, and Moessbauer spectroscopy measurements. From the Rietveld refinement analysis of the XRD patterns, the crystal structure of BiFeO{sub 3} is determined to be rhombohedral with the space group of R3c. We have observed the decrease in the lattice constant and oxygen occupancy with proton irradiation. The magnetization hysteresis (M-H) curves show the appearance of the weak ferromagnetic behavior in the proton irradiated BiFeO{sub 3} samples. The Moessbauer spectra of proton irradiated BiFeO{sub 3} samples at 295 K were analyzed with two-sextets (B{sub 1} and B{sub 2}) and doublet. From the isomer shift ({delta}) values, ionic states were determined to be Fe{sup 3+}. Compared to non-irradiated sample, having the antiferromagnetic area ratio (two-sextets) of 45.47, 54.53% the antiferromagnetic and paramagnetic area ratios (doublet) of 10 and 20 pC/{mu}m{sup 2} proton irradiated BiFeO{sub 3} samples are 41.36, 51.26, and 7.38% and 41.03, 50.90, and 8.07%, respectively. Our experimental observation suggests that the increase in the paramagnetic area ratio is due to the disappearance of superexchange interaction, resulted from the removal of the oxygen with proton irradiation. Also, the appearance of the weak ferromagnetic behavior is caused by the breaking of the antiferromagnetic coupling.

  4. Future use of BI-GAS facility. Final report, Part II. [Other possible uses

    SciTech Connect (OSTI)

    Not Available

    1981-09-01

    The 120 tpd BI-GAS pilot plant, intended to produce SNG at high pressure, was completed in 1976. For the next three and a half years, the operator, Stearns-Roger Inc., was engaged in operating the plant while overcoming a series of mechanical problems that have prevented the plant from running at design capacity and pressure. Since July 1980, these problems have apparently been corrected and considerable progress was made. In late 1979, the Yates Congressional Committee directed DOE to investigate the possibility of establishing an entrained-bed gasifier test facility at the site. In January 1981, the DOE established a study group composed of DOE and UOP/SDC personnel to determine how best to use the BI-GAS facility. The group considered four possibilities: Continue operation of the facility in accordance with the technical program plan developed by DOE and Stearns-Roger; modify the plant into an entrained-bed facility for testing components and processes; mothball the facility, or dismantle the facility. The group took the view that modifying the plant into a test facility would increase substantially the amount of engineering data available to the designers of commercial gasification plants. Since it appears that syngas plants will be of commercial interest sooner than SNG plants will, it was decided that the facility should test syngas production components and processes at high pressure. Consequently, it was recommended that: Operation of the plant be continued, both to collect data and to prove the BI-GAS process, as long as the schedule of the technical program plan is met; Begin at once to prepare a detailed design for modifying the BI-GAS plant to a high-pressure, entrained flow syngas test facility; and Implement the modification plan as soon as the BI-GAS process is proven or it becomes apparent that progress is unsatisfactory.

  5. Sharp inflaton potentials and bi-spectra: effects of smoothening the discontinuity

    SciTech Connect (OSTI)

    Martin, Jérôme; Sriramkumar, L.; Hazra, Dhiraj Kumar E-mail: sriram@physics.iitm.ac.in

    2014-09-01

    Sharp shapes in the inflaton potentials often lead to short departures from slow roll which, in turn, result in deviations from scale invariance in the scalar power spectrum. Typically, in such situations, the scalar power spectrum exhibits a burst of features associated with modes that leave the Hubble radius either immediately before or during the epoch of fast roll. Moreover, one also finds that the power spectrum turns scale invariant at smaller scales corresponding to modes that leave the Hubble radius at later stages, when slow roll has been restored. In other words, the imprints of brief departures from slow roll, arising out of sharp shapes in the inflaton potential, are usually of a finite width in the scalar power spectrum. Intuitively, one may imagine that the scalar bi-spectrum too may exhibit a similar behavior, i.e. a restoration of scale invariance at small scales, when slow roll has been reestablished. However, in the case of the Starobinsky model (viz. the model described by a linear inflaton potential with a sudden change in its slope) involving the canonical scalar field, it has been found that, a rather sharp, though short, departure from slow roll can leave a lasting and significant imprint on the bi-spectrum. The bi-spectrum in this case is found to grow linearly with the wavenumber at small scales, a behavior which is clearly unphysical. In this work, we study the effects of smoothening the discontinuity in the Starobinsky model on the scalar bi-spectrum. Focusing on the equilateral limit, we analytically show that, for smoother potentials, the bi-spectrum indeed turns scale invariant at suitably large wavenumbers. We also confirm the analytical results numerically using our newly developed code BINGO. We conclude with a few comments on certain related points.

  6. Characterization and visible light photocatalytic mechanism of size-controlled BiFeO{sub 3} nanoparticles

    SciTech Connect (OSTI)

    He, Jian; Guo, Renqing; Fang, Liang; Dong, Wen; Zheng, Fengang; Shen, Mingrong

    2013-09-01

    Graphical abstract: BiFeO{sub 3} nanoparticles showed the size-dependent photocatalytic properties, and the corresponding photocatalytic mechanism for the pollutant degradation was proposed. - Highlights: Size-controlled BiFeO{sub 3} nanoparticles were prepared by solgel method. The hydroxyl radicals were the main reactive species responsible for the pollutant degradation. BiFeO{sub 3} nanoparticles showed the size-dependent photocatalytic properties. - Abstract: BiFeO{sub 3} nanoparticles with controlled particle size were synthesized via solgel method. The samples were characterized by X-ray powder diffraction, transmission electron microscope, Raman spectra, nitrogen adsorption technique and UVvis diffuse reflectance spectra. Photocatalytic activity of BiFeO{sub 3} nanoparticles was further examined by monitoring the degradation of Rhodamine B dye in an aqueous solution under visible light irradiation. Through the calculation of band position and a number of diagnostic experiments, the photocatalytic mechanism of BiFeO{sub 3} nanoparticles was proposed in this study. It was found that the hydroxyl radicals originated from the photogenerated electrons were the main reactive species responsible for the pollutant degradation. Moreover, with the variations of annealing temperature and time, the average crystallite size, specific surface area and crystallinity of BiFeO{sub 3} nanoparticles could be changed, which thus affected the photocatalytic activity of the corresponding samples.

  7. MicroRNAs let-7b/i suppress human glioma cell invasion and migration by targeting IKBKE directly

    SciTech Connect (OSTI)

    Tian, Yuan; Hao, Shaobo; Ye, Minhua; Zhang, Anling; Nan, Yang; Wang, Guangxiu; Jia, Zhifan; Yu, Kai; Guo, Lianmei; Pu, Peiyu; Huang, Qiang; Zhong, Yue

    2015-03-06

    We demonstrated that IKBKE is overexpressed in human gliomas and that the downregulation of IKBKE markedly inhibits the proliferative and invasive abilities of glioma cells, which is consistent with the results reported by several different research groups. Therefore, IKBKE represents a promising therapeutic target for the treatment of glioma. In the present study, we verified that the microRNAs let-7b and let-7i target IKBKE through luciferase assays and found that let-7b/i mimics can knock down IKBKE and upregulate E-cadherin through western blot analysis. Moreover, the expression levels of let-7b/i were significantly lower in glioma cell lines than that in normal brain tissues, as determined by quantitative real-time PCR. Furthermore, let-7b/i inhibit the invasion and migration of glioma cells, as determined through wound healing and Transwell assays. The above-mentioned data suggest that let-7b/i inhibit the invasive ability of glioma cells by directly downregulating IKBKE and indirectly upregulating E-cadherin. - Highlights: • Let-7b and let-7i are downregulated in glioma cell lines. • IKBKE is a target gene of let-7b/i. • Let-7b/i inhibit the invasion and migration of glioma cells. • Let-7b/i upregulate E-cadherin by downregulating IKBKE.

  8. Enhanced photocatalytic performance of g-C{sub 3}N{sub 4} with BiOCl quantum dots modification

    SciTech Connect (OSTI)

    Zheng, Chun-zhi Zhang, Chun-yong Zhang, Guo-hua Zhao, De-jian Wang, Ya-zhen

    2014-07-01

    Highlights: Novel BiOCl quantum dots modified g-C{sub 3}N{sub 4} photocatalyst was synthesized. BiOCl-g-C{sub 3}N{sub 4} showed much higher photocatalytic activity than pure g-C{sub 3}N{sub 4} and BiOCl. High separation efficiency of photoinduced carriers results in the enhanced performance. - Abstract: Novel BiOCl quantum dots modified g-C{sub 3}N{sub 4} photocatalyst was synthesized by a one-step chemical bath method at low temperature. The photocatalyst was characterized using X-ray diffraction, high-resolution transmission microscopy UVvisible light diffusion reflectance spectrometry, and photoluminescence spectroscopy. The results indicated that BiOCl quantum dots were dispersed on g-C{sub 3}N{sub 4} to form heterojunction structures with high specific surface area. BiOCl-g-C{sub 3}N{sub 4} showed much higher photocatalytic activity than pure g-C{sub 3}N{sub 4} and BiOCl for rhodamine B degradation. The enhanced performance was induced by the high separation efficiency of photoinduced carriers.

  9. Pressure-dependent Optical Behaviors of Colloidal CdSe Nanoplatelets...

    Office of Scientific and Technical Information (OSTI)

    dependent Optical Behaviors of Colloidal CdSe Nanoplatelets Citation Details In-Document Search Title: Pressure-dependent Optical Behaviors of Colloidal CdSe Nanoplatelets Authors: ...

  10. Thermodynamic properties of model CdTe/CdSe mixtures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; Martin, James E.

    2015-02-20

    We report on the thermodynamic properties of binary compound mixtures of model groups II–VI semiconductors. We use the recently introduced Stillinger–Weber Hamiltonian to model binary mixtures of CdTe and CdSe. We use molecular dynamics simulations to calculate the volume and enthalpy of mixing as a function of mole fraction. The lattice parameter of the mixture closely follows Vegard's law: a linear relation. This implies that the excess volume is a cubic function of mole fraction. A connection is made with hard sphere models of mixed fcc and zincblende structures. We found that the potential energy exhibits a positive deviation frommore » ideal soluton behaviour; the excess enthalpy is nearly independent of temperatures studied (300 and 533 K) and is well described by a simple cubic function of the mole fraction. Using a regular solution approach (combining non-ideal behaviour for the enthalpy with ideal solution behaviour for the entropy of mixing), we arrive at the Gibbs free energy of the mixture. The Gibbs free energy results indicate that the CdTe and CdSe mixtures exhibit phase separation. The upper consolute temperature is found to be 335 K. Finally, we provide the surface energy as a function of composition. Moreover, it roughly follows ideal solution theory, but with a negative deviation (negative excess surface energy). This indicates that alloying increases the stability, even for nano-particles.« less

  11. Fabrication and testing of diamond-machined gratings in ZnSe, GaP, and bismuth germanate for the near infrared and visible

    SciTech Connect (OSTI)

    Kuzmenko, P J; Little, S L; Ikeda, Y; Kobayashi, N

    2008-06-22

    High quality immersion gratings for infrared applications have been demonstrated in silicon and germanium. To extend this technology to shorter wavelengths other materials must be investigated. We selected three materials, zinc selenide, gallium phosphide and bismuth germanate (Bi{sub 4}Ge{sub 3}O{sub 12}), based on high refractive index, good visible transmission and commercial availability in useful sizes. Crystal samples were diamond turned on an ultra-precision lathe to identify preferred cutting directions. Using this information we diamond-flycut test gratings over a range of feed rates to determine the optimal cutting conditions. For both ZnSe and GaP good surface quality was achieved at feed rates up to 1.0 cm/minute using a special compound angle diamond tool with negative rake angles on both cutting surfaces. The surface roughness of the groove facets was about 4 nm. A Zygo interferometer measured grating wavefront errors in reflection. For the ZnSe the RMS error was < {lambda}/20 at 633nm. More extensive testing was performed with a HeNe laser source and a cooled CCD camera. These measurements demonstrated high relative diffraction efficiency (> 80%), low random groove error (2.0 nm rms), and Rowland ghost intensities at < 0.1%. Preliminary tests on bismuth germanate show high tool wear.

  12. Magnetic Transitions in the Spin-5/2 Frustrated Magnet BiMn2PO6 and Strong Lattice Softening in BiMn2PO6 and BiZn2PO6 Below 200 K

    SciTech Connect (OSTI)

    Nath, R; Ranjith, K M; Roy, B; Johnston, D C; Furukawa, Y; Tsirlin, A A

    2014-07-01

    The crystallographic, magnetic, and thermal properties of polycrystalline BiMn2PO6 and its nonmagnetic analog BiZn2PO6 are investigated by x-ray diffraction, magnetization M, magnetic susceptibility ?, heat capacity Cp, and P31 nuclear magnetic resonance (NMR) measurements versus applied magnetic field H and temperature T as well as by density-functional band theory and molecular-field calculations. Both compounds show a strong monotonic lattice softening on cooling, where the Debye temperature decreases by a factor of two from ?D?650 K at T=300 K to ?D?300 K at T=2 K. The ?(T) data for BiMn2PO6 above 150 K follow a Curie-Weiss law with a Curie constant consistent with a Mn+2 spin S=5/2 with g factor g=2 and an antiferromagnetic (AFM) Weiss temperature ?CW??78 K. The ? data indicate long-range AFM ordering below TN?30 K, confirmed by a sharp ?-shaped peak in Cp(T) at 28.8 K. The magnetic entropy at 100 K extracted from the Cp(T) data is consistent with spin S=5/2 for the Mn+2 cations. The band-theory calculations indicate that BiMn2PO6 is an AFM compound with dominant interactions J1/kB?6.7 K and J3/kB?5.6 K along the legs and rungs of a Mn two-leg spin-ladder, respectively. However, sizable and partially frustrating interladder couplings lead to an anisotropic three-dimensional magnetic behavior with long-range AFM ordering at TN?30 K observed in the ?, Cp, and NMR measurements. A second magnetic transition at ?10 K is observed from the ? and NMR measurements but is not evident in the Cp data. The Cp data at low T suggest a significant contribution from AFM spin waves moving in three dimensions and the absence of a spin-wave gap. A detailed analysis of the NMR spectra indicates commensurate magnetic order between 10 and 30 K, while below 10 K additional features appear that may arise from an incommensurate modulation and/or spin canting. The commensurate order is consistent with microscopic density functional calculations that yield a collinear Nel-type AFM spin arrangement both within and between the ladders, despite the presence of multiple weak interactions frustrating this magnetic structure of the Mn spins. Frustration for AFM ordering and the one-dimensional spatial anisotropy of the three-dimensional spin interactions are manifested in the frustration ratio f=|?CW|/TN?2.6, indicating a suppression of TN from 68 K in the absence of these effects to the observed value of about 30 K in BiMn2PO6.

  13. Temperature-dependent structural property and power factor of n type thermoelectric Bi{sub 0.90}Sb{sub 0.10} and Bi{sub 0.86}Sb{sub 0.14} alloys

    SciTech Connect (OSTI)

    Malik, K.; Das, Diptasikha; Bandyopadhyay, S.; Banerjee, Aritra; Center for Research in Nanoscience and Nanotechnology, University of Calcutta, JD-2, Sector-III, Saltlake City, Kolkata 700 098 ; Mandal, P.; Srihari, Velaga

    2013-12-09

    Thermal variation of structural property, linear thermal expansion coefficient (?), resistivity (?), thermopower (S), and power factor (PF) of polycrystalline Bi{sub 1-x}Sb{sub x} (x?=?0.10 and 0.14) samples are reported. Temperature-dependent powder diffraction experiments indicate that samples do not undergo any structural phase transition. Rietveld refinement technique has been used to perform detailed structural analysis. Temperature dependence of ? is found to be stronger for Bi{sub 0.90}Sb{sub 0.10}. Also, PF for direct band gap Bi{sub 0.90}Sb{sub 0.10} is higher as compared to that for indirect band gap Bi{sub 0.86}Sb{sub 0.14}. Role of electron-electron and electron-phonon scattering on ?, S, and PF has been discussed.

  14. Magnetooptical study of CdSe/ZnMnSe semimagnetic quantum-dot ensembles with n-type modulation doping

    SciTech Connect (OSTI)

    Reshina, I. I. Ivanov, S. V.

    2014-12-15

    Magnetic and polarization investigations of the photoluminescence and resonant electron spin-flip Raman scattering in ensembles of self-organized CdSe/ZnMnSe semimagnetic quantum dots with n-type modulation doping are carried out. It is demonstrated that exciton transitions contribute to the photoluminescence band intensity, along with the transitions of trions in the singlet state. In the Hanle-effect measurements, negative circular polarization in zero magnetic field is observed, which is related to the optical orientation of a trion heavy hole. The lifetime and spin-relaxation time of a heavy hole are estimated as ?3 and ?1 ps, respectively. Such short times are assumed to be due to Auger recombination with the excitation of an intrinsic transition in a Mn{sup 2+} ion. Investigations of the photoluminescence-maximum intensity and shift in a longitudinal magnetic field at the ?{sup ?}?{sup +} and ?{sup ?}?{sup ?} polarizations reveal the pronounced spin polarization of electrons. Under resonant excitation conditions, a sharp increase in the photoluminescence-band maximum intensity at ?{sup ?} excitation polarization over the ?{sup +} one is observed. The Raman scattering peak at the electron spin-flip transition is observed upon resonant excitation in a transverse magnetic field in crossed linear polarizations. This peak is shown to be a Brillouin function of a magnetic field.

  15. Seed-mediated synthesis, properties and application of {gamma}-Fe{sub 2}O{sub 3}-CdSe magnetic quantum dots

    SciTech Connect (OSTI)

    Lin, Alex W.H.; Ang, Chung Yen; Patra, Pranab K.; Han Yu; Gu Hongwei; Le Breton, Jean-Marie; Juraszek, Jean; Chiron, Hubert; Papaefthymiou, Georgia C.; Tamil Selvan, Subramanian; Ying, Jackie Y.

    2011-08-15

    Seed-mediated growth of fluorescent CdSe quantum dots (QDs) around {gamma}-Fe{sub 2}O{sub 3} magnetic cores was performed at high temperature (300 deg. C) in the presence of organic surfactants. Bi-functional magnetic quantum dots (MQDs) with tunable emission properties were successfully prepared. The as-synthesized MQDs were characterized by high-resolution transmission electron microscopy (HRTEM) and dynamic light scattering (DLS), which confirmed the assembly of heterodimers. When a longer growth period was employed, a homogeneous dispersion of QDs around a magnetic nanoparticle was obtained. The magnetic properties of these nanocomposites were examined. The MQDs were superparamagnetic with a saturation magnetization of 0.40 emu/g and a coercivity of 138 Oe at 5 K. To demonstrate their potential application in bio-labeling, these MQDs were coated with a thin silica shell, and functionalized with a polyethylene glycol (PEG) derivative. The functionalized MQDs were effectively used for the labeling of live cell membranes of 4T1 mouse breast cancer cells and HepG2 human liver cancer cells. - Graphical abstract: (a) HRTEM image of oleic acid capped MPs. The size of MPs ranges from 8 to 10 nm. (b) XRD pattern of {gamma}-Fe{sub 2}O{sub 3} MPs. Highlights: > The fabrication of MQDs through a seed-mediated approach has been demonstrated. > The formation and assembly of these bi-functional nanocomposites have been elucidated. > The MQDs exhibit superparamagnetism and tunable emissions characteristic of the components. > MQDs with thin silica coating were successfully employed in the labeling of cancer cell membranes.

  16. Polarization of Bi{sub 2}Te{sub 3} thin film in a floating-gate capacitor structure

    SciTech Connect (OSTI)

    Yuan, Hui E-mail: qli6@gmu.edu; Li, Haitao; Zhu, Hao; Zhang, Kai; Baumgart, Helmut; Bonevich, John E.; Richter, Curt A.; Li, Qiliang E-mail: qli6@gmu.edu

    2014-12-08

    Metal-Oxide-Semiconductor (MOS) capacitors with Bi{sub 2}Te{sub 3} thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi{sub 2}Te{sub 3} thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33?eV for separating the electron and hole pairs in the bulk of Bi{sub 2}Te{sub 3}, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent endurance, and the complementary metaloxidesemiconductor compatibility, the Bi{sub 2}Te{sub 3} embedded MOS structures are very interesting for memory application.

  17. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  18. Local structure underlying anomalous tetragonal distortions in BiFeO{sub 3}-PbTiO{sub 3} ferroelectrics

    SciTech Connect (OSTI)

    Levin, I.; Krayzman, V.; Woicik, J. C.; Tucker, M. G.

    2014-06-16

    The local structure of tetragonal BiFeO{sub 3}-PbTiO{sub 3} solid solutions featuring anomalous lattice distortions has been determined using simultaneous fitting of neutron total scattering and extended X-ray absorption fine structure data. On the local scale, the large tetragonal distortion, promoted by the displacements of the A-cations (Bi and Pb), is accommodated primarily by the [FeO{sub 6}] octahedra, even though both Fe and Ti acquire (5+1)-fold coordination. Bi cations exhibit considerably larger displacements than Pb. The combination of the A-cation displacements and the ability of M-cations to adopt 5-fold coordination is suggested as key for stabilizing the large tetragonality in BiMO{sub 3}-PbTiO{sub 3} systems.

  19. Photoluminescence study of the substitution of Cd by Zn during the growth by atomic layer epitaxy of alternate CdSe and ZnSe monolayers

    SciTech Connect (OSTI)

    Hernndez-Caldern, I.; Salcedo-Reyes, J. C.

    2014-05-15

    We present a study of the substitution of Cd atoms by Zn atoms during the growth of alternate ZnSe and CdSe compound monolayers (ML) by atomic layer epitaxy (ALE) as a function of substrate temperature. Samples contained two quantum wells (QWs), each one made of alternate CdSe and ZnSe monolayers with total thickness of 12 ML but different growth parameters. The QWs were studied by low temperature photoluminescence (PL) spectroscopy. We show that the Cd content of underlying CdSe layers is affected by the exposure of the quantum well film to the Zn flux during the growth of ZnSe monolayers. The amount of Cd of the quantum well film decreases with higher exposures to the Zn flux. A brief discussion about the difficulties to grow the Zn{sub 0.5}Cd{sub 0.5}Se ordered alloy (CuAu-I type) by ALE is presented.

  20. Fragile antiferromagnetism in the heavy-fermion compound YbBiPt

    SciTech Connect (OSTI)

    Ueland, Benjamin G. [Ames Laboratory; Kreyssig, Andreas [Ames Laboratory; Prokes, K. [Helmholtz-Zentrum Berlin fur Materialien und Energie; Lynn, J. W. [NIST Center for Neutron Research; Harriger, L. W. [NIST Center for Neutron Research; Pratt, D. K. [NIST Center for Neutron Research; Singh, D. K. [NIST Center for Neutron Research; Heitmann, T. W. [University of Missouri; Sauerbrei, Samantha [Ames Laboratory; Saunders, Scott M. [Ames Laboratory; Mun, E. D. [Ames Laboratory; Budko, Serguei L. [Ames Laboratory; McQueeney, Robert J. [Ames Laboratory; Canfield, Paul C. [Ames Laboratory; Goldman, Alan I. [Ames Laboratory

    2014-05-08

    We report results from neutron scattering experiments on single crystals of YbBiPt that demonstrate antiferromagnetic order characterized by a propagation vector, ?AFM = (121212), and ordered moments that align along the [1 1 1] direction of the cubic unit cell. We describe the scattering in terms of a two-Gaussian peak fit, which consists of a narrower component that appears below TN?0.4 K and corresponds to a magnetic correlation length of ?n? 80 , and a broad component that persists up to T?? 0.7 K and corresponds to antiferromagnetic correlations extending over ?b? 20 . Our results illustrate the fragile magnetic order present in YbBiPt and provide a path forward for microscopic investigations of the ground states and fluctuations associated with the purported quantum critical point in this heavy-fermion compound.

  1. A Comprehensive Approach to Bi-National Regional Energy Planning in the Pacific Northwest

    SciTech Connect (OSTI)

    Matt Morrison

    2007-12-31

    The Pacific NorthWest Economic Region, a statutory organization chartered by the Northwest states of Alaska, Washington, Idaho, Montana, and Oregon, and the western Canadian provinces of British Columbia, Alberta, and the Yukon through its Energy Working Group launched a bi-national energy planning initiative designed to create a Pacific Northwest energy planning council of regional public/private stakeholders from both Canada and the US. There is an urgent need to deal with the comprehensive energy picture now before our hoped for economic recovery results in energy price spikes which are likely to happen because the current supply will not meet predicted demand. Also recent events of August 14th have shown that our bi-national energy grid system is intricately interdependent, and additional planning for future capacity is desperately needed.

  2. Effective activation energy in the Bi-Sr-Ca-Cu-O systems

    SciTech Connect (OSTI)

    Sengupta, S.; Shi, D.; Wang, Z.; Smith, M.; McGinn, P.J.

    1992-08-01

    Magnetic relaxation in the Bi-Sr-Ca-Cu-O systems has been investigated in a wide temperature regime. Previously reported studies of the effective activation energy, U, have been controversial in terms of temperature and field dependence of the critical current density, j{sub c}. We have considered the temperature dependence of j{sub c} and constructed the U-j (or M) curves for the Bi-Sr-Ca-Cu-O system. We found that at a constant driving force and temperature, U is considerably higher for 2245 samples than for 2223 samples. This enhancement can be attributed to the flux pinning from finely dispersed calcium- and copper- rich precipitates.

  3. Effective activation energy in the Bi-Sr-Ca-Cu-O systems

    SciTech Connect (OSTI)

    Sengupta, S.; Shi, D.; Wang, Z.; Smith, M. ); McGinn, P.J. . Dept. of Electrical Engineering)

    1992-08-01

    Magnetic relaxation in the Bi-Sr-Ca-Cu-O systems has been investigated in a wide temperature regime. Previously reported studies of the effective activation energy, U, have been controversial in terms of temperature and field dependence of the critical current density, j[sub c]. We have considered the temperature dependence of j[sub c] and constructed the U-j (or M) curves for the Bi-Sr-Ca-Cu-O system. We found that at a constant driving force and temperature, U is considerably higher for 2245 samples than for 2223 samples. This enhancement can be attributed to the flux pinning from finely dispersed calcium- and copper- rich precipitates.

  4. Bi-level multilayered microelectronic device package with an integral window

    DOE Patents [OSTI]

    Peterson, Kenneth A.; Watson, Robert D.

    2002-01-01

    A bi-level, multilayered package with an integral window for housing a microelectronic device. The device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The multilayered package can be formed of a low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the window being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded and oriented so that the light-sensitive side is optically accessible through the window. A second chip can be bonded to the backside of the first chip, with the second chip being wirebonded to the second level of the bi-level package. The result is a compact, low-profile package, having an integral window that can be hermetically-sealed.

  5. Nonlinear evolution of the electromagnetic electron-cyclotron instability in bi-Kappa distributed plasma

    SciTech Connect (OSTI)

    Eliasson, B.; Lazar, M.

    2015-06-15

    This paper presents a numerical study of the linear and nonlinear evolution of the electromagnetic electron-cyclotron (EMEC) instability in a bi-Kappa distributed plasma. Distributions with high energy tails described by the Kappa power-laws are often observed in collision-less plasmas (e.g., solar wind and accelerators), where wave-particle interactions control the plasma thermodynamics and keep the particle distributions out of Maxwellian equilibrium. Under certain conditions, the anisotropic bi-Kappa distribution gives rise to plasma instabilities creating low-frequency EMEC waves in the whistler branch. The instability saturates nonlinearly by reducing the temperature anisotropy until marginal stability is reached. Numerical simulations of the Vlasov-Maxwell system of equations show excellent agreement with the growth-rate and real frequency of the unstable modes predicted by linear theory. The wave-amplitude of the EMEC waves at nonlinear saturation is consistent with magnetic trapping of the electrons.

  6. Structure and dynamics in liquid bismuth and Bi{sub n} clusters: A density functional study

    SciTech Connect (OSTI)

    Akola, J.; Atodiresei, N.; Kalikka, J.; Larrucea, J.; Jones, R. O.

    2014-11-21

    Density functional/molecular dynamics simulations with more than 500 atoms have been performed on liquid bismuth at 573, 773, 923, and 1023 K and on neutral Bi clusters with up to 14 atoms. There are similar structural patterns (coordination numbers, bond angles, and ring patterns) in the liquid and the clusters, with significant differences from the rhombohedral crystalline form. We study the details of the structure (structure factor, pair, and cavity distribution functions) and dynamical properties (vibration frequencies, diffusion constants, power spectra), and compare with experimental results where available. While the three short covalent bonds typical to pnictogens are characteristic in both liquid and clusters, the number of large voids and the total cavity volume is much larger in the liquid at 1023 K, with larger local concentration variations. The inclusion of spin-orbit coupling results in a lowering of the cohesive energies in Bi{sub n} clusters of 0.30.5 eV/atom.

  7. Incoherent Bi off-centering in Bi₂Ti₂O₆O' and Bi₂Ru₂O₆O': Insulator versus metal

    SciTech Connect (OSTI)

    Shoemaker, Daniel P.; Seshadri, Ram; Tachibana, Makoto; Hector, Andrew L.

    2011-08-24

    In the cubic, stoichiometric oxide compounds Bi₂Ti₂O₆O' (also written as Bi₂Ti₂O₇) and Bi₂Ru₂O₆O' (also written as Bi₂Ru₂O₇) Bi³⁺ ions on the pyrochlore A site display a propensity to off-center. Unlike Bi₂Ti₂O₆O', Bi₂Ru₂O₆O' is a metal, so it is of interest to ask whether conduction electrons and/or involvement of Bi 6s states at the Fermi energy influence Bi³⁺ displacements. The Bi³⁺ off-centering in Bi₂Ti₂O₆O' has previously been revealed to be incoherent from detailed reverse Monte Carlo analysis of total neutron scattering. Similar analysis of Bi₂Ru₂O₆O' reveals incoherent off-centering as well, but of smaller magnitude and with distinctly different orientational preference. Analysis of the distributions of metal to oxygen distances presented suggests that Bi in both compounds is entirely Bi³⁺. Disorder in Bi₂Ti₂O₆O' has the effect of stabilizing valence while simultaneously satisfying the steric constraint imposed by the presence of the lone pair of electrons. In Bi₂Ru₂O₆O', off-centering is not required to satisfy valence and seems to be driven by the lone pair. Decreased volume of the lone pair may be a result of partial screening by conduction electrons.

  8. Incoherent Bi off-centering in Bi₂Ti₂O₆O' and Bi₂Ru₂O₆O': Insulator versus metal

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shoemaker, Daniel P.; Seshadri, Ram; Tachibana, Makoto; Hector, Andrew L.

    2011-08-24

    In the cubic, stoichiometric oxide compounds Bi₂Ti₂O₆O' (also written as Bi₂Ti₂O₇) and Bi₂Ru₂O₆O' (also written as Bi₂Ru₂O₇) Bi³⁺ ions on the pyrochlore A site display a propensity to off-center. Unlike Bi₂Ti₂O₆O', Bi₂Ru₂O₆O' is a metal, so it is of interest to ask whether conduction electrons and/or involvement of Bi 6s states at the Fermi energy influence Bi³⁺ displacements. The Bi³⁺ off-centering in Bi₂Ti₂O₆O' has previously been revealed to be incoherent from detailed reverse Monte Carlo analysis of total neutron scattering. Similar analysis of Bi₂Ru₂O₆O' reveals incoherent off-centering as well, but of smaller magnitude and with distinctly different orientational preference. Analysismore » of the distributions of metal to oxygen distances presented suggests that Bi in both compounds is entirely Bi³⁺. Disorder in Bi₂Ti₂O₆O' has the effect of stabilizing valence while simultaneously satisfying the steric constraint imposed by the presence of the lone pair of electrons. In Bi₂Ru₂O₆O', off-centering is not required to satisfy valence and seems to be driven by the lone pair. Decreased volume of the lone pair may be a result of partial screening by conduction electrons.« less

  9. The coupling to matter in massive, bi- and multi-gravity

    SciTech Connect (OSTI)

    Noller, Johannes; Melville, Scott E-mail: scott.melville@queens.ox.ac.uk

    2015-01-01

    In this paper we construct a family of ways in which matter can couple to one or more 'metrics'/spin-2 fields in the vielbein formulation. We do so subject to requiring the weak equivalence principle and the absence of ghosts from pure spin-2 interactions generated by the matter action. Results are presented for Massive, Bi- and Multi-Gravity theories and we give explicit expressions for the effective matter metric in all of these cases.

  10. Quantum oscillations in magnetothermopower measurements of topological insulator Bi2Te3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qu, Dong -Xia; Hor, Y. S.; Cava, R. J.

    2012-12-10

    We report the magnetothermopower measurements of the nonmetallic topological insulator Bi2Te3 in magnetic fields up to 35 T. Quantum oscillations arising from surface states are observed in both thermoelectric and conductivity tensors. The inferred surface thermopower has a peak magnitude ~1 mV/K possibly as a result of surface electron and bulk phonon interaction. At the n = 1 Landau level, we resolve additional quantum oscillations signaling Landau sublevels.

  11. CsBi4Te6: A High-Performance Thermoelectric Material for Low-Temperature

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Applications | Energy Frontier Research Centers CsBi4Te6: A High-Performance Thermoelectric Material for Low-Temperature Applications Home Author: D.Y. Chung, T. Hogan, P. Brazis, M. Rocci-Lane, C. Kannawurf, M. Bastea, C. Uher, M. Kanatzidis Year: 2000 Abstract: Thermoelectric (Peltier) heat pumps are capable of refrigerating solid or fluid objects, and unlike conventional vapor compressor systems, they can be miniaturized without loss of efficiency. More efficient thermoelectric materials

  12. Quasi-linear heating and acceleration in bi-Maxwellian plasmas

    SciTech Connect (OSTI)

    Hellinger, Petr; Trvn?ek, Pavel M.

    2013-12-15

    Quasi-linear acceleration and heating rates are derived for drifting bi-Maxwellian distribution functions in a general nonrelativistic case for arbitrary wave vectors, propagation angles, and growth/damping rates. The heating rates in a proton-electron plasma due to ion-cyclotron/kinetic Alfvn and mirror waves for a wide range of wavelengths, directions of propagation, and growth or damping rates are explicitly computed.

  13. Spin-Induced Polarizations and Directional Dichroism of Multiferroic BiFeO3.

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Fishman, Randy Scott; Lee, Jun Hee; Bordacs, S.; Kezsmarki, I.; Nagel, U.; Room, T.

    2015-09-14

    A microscopic model for the room-temperature multiferroic BiFeO3 that includes two Dzyaloshinskii-Moriya interactions and single-ion anisotropy along the ferroelectric polarization predicts both the zero-field spectroscopic modes as well as their splitting and evolution in a magnetic field. Due to simultaneously broken time-reversal and spatial-inversion symmetries, the absorption of light changes as the magnetic field or the direction of light propagation is reversed. We discuss three physical mechanisms that may contribute to this absorption asymmetry known as directional dichroism: the spin current, magnetostriction, and single-ion anisotropy. We conclude that the directional dichroism in BiFeO3 is dominated by the spin-current polarization andmoreis insensitive to the magnetostriction and easy-axis anisotropy. With three independent spin-current parameters, our model accurately describes the directional dichroism observed for magnetic field along [1, 1, 0]. Since some modes are almost transparent to light traveling in one direction but opaque for light traveling in the opposite direction, BiFeO3 can be used as a room-temperature optical diode at certain frequencies in the GHz to THz range. Our work demonstrates that an analysis of the directional dichroism spectra based on an effective spin model supplemented by first-principles calculations can produce a quantitative microscopic theory of the magnetoelectric couplings in multiferroic materials.less

  14. 110K Bi-Sr-Ca-Cu-O superconductor oxide and method for making same

    DOE Patents [OSTI]

    Veal, B.W.; Downey, J.W.; Lam, D.J.; Paulikas, A.P.

    1992-12-22

    A superconductor is disclosed consisting of a sufficiently pure phase of the oxides of Bi, Sr, Ca, and Cu to exhibit a resistive zero near 110K resulting from the process of forming a mixture of Bi[sub 2]O[sub 3], SrCO[sub 3], CaCO[sub 3] and CuO into a particulate compact wherein the atom ratios are Bi[sub 2], Sr[sub 1.2-2.2], Ca[sub 1.8-2.4], Cu[sub 3]. Thereafter, heating the particulate compact rapidly in the presence of oxygen to an elevated temperature near the melting point of the oxides to form a sintered compact, and then maintaining the sintered compact at the elevated temperature for a prolonged period of time. The sintered compact is cooled and reground. Thereafter, the reground particulate material is compacted and heated in the presence of oxygen to an elevated temperature near the melting point of the oxide and maintained at the elevated temperature for a time sufficient to provide a sufficiently pure phase to exhibit a resistive zero near 110K. 7 figs.

  15. 110K Bi-Sr-Ca-Cu-O superconductor oxide and method for making same

    DOE Patents [OSTI]

    Veal, Boyd W.; Downey, John W.; Lam, Daniel J.; Paulikas, Arvydas P.

    1992-01-01

    A superconductor consisting of a sufficiently pure phase of the oxides of Bi, Sr, Ca, and Cu to exhibit a resistive zero near 110K resulting from the process of forming a mixture of Bi.sub.2 O.sub.3, SrCO.sub.3, CaCO.sub.3 and CuO into aparticulate compact wherein the atom ratios are Bi.sub.2, Sr.sub.1.2-2.2, Ca.sub.1.8-2.4, Cu.sub.3. Thereafter, heating the particulate compact rapidly in the presence of oxygen to an elevated temperature near the melting point of the oxides to form a sintered compact, and then maintaining the sintered compact at the elevated temperature for a prolonged period of time. The sintered compact is cooled and reground. Thereafter, the reground particulate material is compacted and heated in the presence of oxygen to an elevated temperature near the melting point of the oxide and maintained at the elevated temperature for a time sufficient to provide a sufficiently pure phase to exhibit a resistive zero near 110K.

  16. Extended magnetic exchange interactions in the high-temperature ferromagnet MnBi

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Christianson, Andrew D.; Hahn, Steven E.; Fishman, Randy Scott; Parker, David S.; McGuire, Michael A.; Sales, Brian C.; Lumsden, Mark D.; Williams, T. J.; Taylor, A. E.

    2016-05-09

    Here, the high-temperature ferromagnet MnBi continues to receive attention as a candidate to replace rare-earth-containing permanent magnets in applications above room temperature. This is due to a high Curie temperature, large magnetic moments, and a coercivity that increases with temperature. The synthesis of MnBi also allows for crystals that are free of interstitial Mn, enabling more direct access to the key interactions underlying the physical properties of binary Mn-based ferromagnets. In this work, we use inelastic neutron scattering to measure the spin waves of MnBi in order to characterize the magnetic exchange at low temperature. Consistent with the spin reorientationmore » that occurs below 140~K, we do not observe a spin gap in this system above our experimental resolution. A Heisenberg model was fit to the spin wave data in order to characterize the long-range nature of the exchange. It was found that interactions up to sixth nearest neighbor are required to fully parameterize the spin waves. Surprisingly, the nearest-neighbor term is antiferromagnetic, and the realization of a ferromagnetic ground state relies on the more numerous ferromagnetic terms beyond nearest neighbor, suggesting that the ferromagnetic ground state arises as a consequence of the long-ranged interactions in the system.« less

  17. Superheating Suppresses Structural Disorder in Layered BiI3 Semiconductors Grown by the Bridgman Method

    SciTech Connect (OSTI)

    Johns, Paul M.; Sulekar, Soumitra; Yeo, Shinyoung; Baciak, James E.; Bliss, Mary; Nino, Juan C.

    2016-01-01

    The susceptibility of layered structures to stacking faults is a problem in some of the more attractive semiconductor materials for ambient-temperature radiation detectors. In the work presented here, Bridgman-grown BiI3 layered single crystals are investigated to understand and eliminate this structural disorder, which reduces radiation detector performance. The use of superheating gradients has been shown to improve crystal quality in non-layered semiconductor crystals; thus the technique was here explored to improve the growth of BiI3. When investigating the homogeneity of non-superheated crystals, highly geometric void defects were found to populate the bulk of the crystals. Applying a superheating gradient to the melt prior to crystal growth improved structural quality and decreased defect density from the order of 4600 voids per cm3 to 300 voids per cm3. Corresponding moderate improvements to electronic properties also resulted from the superheat gradient method of crystal growth. Comparative measurements through infrared microscopy, etch-pit density, x-ray rocking curves, and sheet resistivity readings show that superheat gradients in BiI3 growth led to higher quality crystals.

  18. Pressure-enhanced superconductivity in Eu3Bi2S4F4

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Luo, Yongkang; Zhai, Hui -Fei; Zhang, Pan; Xu, Zhu -An; Cao, Guang -Han; Thompson, J. D.

    2014-12-17

    The pressure effect on the newly discovered charge-transferred BiS2-based superconductor, Eu3Bi2S4F4, with a Tc of 1.5 K at ambient pressure, is investigated by transport and magnetic measurements. Accompanied with the enhancement of metallicity under pressures, the onset superconducting transition temperature increases abruptly around 1.0 GPa, reaching ~10.0 K at 2.26 GPa. Alternating current magnetic susceptibility measurements indicate that a new superconducting phase with a higher Tc emerges and dominates at high pressures. In the broad pressure window of 0.68GPa≤p≤2.00 GPa, the high-Tc phase coexists with the low-Tc phase. Hall effect measurements reveal a significant difference in electronic structures between themore » two superconducting phases. As a result, our work devotes the effort to establish the commonality of pressure effect on the BiS2-based superconductors, and also uncovers the importance of electron carrier density in the high-Tc phase.« less

  19. Interplay between intrinsic and stacking-fault magnetic domains in bi-layered manganites

    SciTech Connect (OSTI)

    Hossain, M.A; Burkhardt, Mark H.; Sarkar, S.; Ohldag, H.; Chuang, Y.-D.; Scholl, A.; Young, A.T.; Doran, A.; Dessau, D.S.; Zheng, H.; Mitchell, J.F.; Durr, H.A.; Stohr, J.

    2012-09-11

    We present a low temperature X-ray photoemission electron microscopy study of the bi-layered manganite compound La{sub 1.2}Sr{sub 1.8}Mn{sub 2}O{sub 7} (BL-LSMO) to investigate the influence of stacking faults, which are structurally and magnetically different from the bi-layered host. In BL-LSMO small magnetic moment persists to T* = 300K, well above the Curie temperature of 120K (T{sub C}). Our magnetic images show that 3D stacking faults are responsible for the T* transition. Furthermore, close to the T{sub C}, stacking faults are well coupled to the bi-layered host with latter magnetic domains controlling the spin direction of the stacking faults. Contrary to recent reports, we find that stacking faults do not seed magnetic domains in the host via an exchange spring mechanism and the intrinsic T{sub C} of the BL-LSMO is not lower than 120K.

  20. Cobalt-doped Bi{sub 26}Mo{sub 10}O{sub 69}: Crystal structure and conductivity

    SciTech Connect (OSTI)

    Mikhailovskaya, Z.A.; Buyanova, E.S.; Petrova, S.A.; Morozova, M.V.; Zhukovskiy, V.M.; Zakharov, R.G.; Tarakina, N.V.; Berger, I.F.

    2013-08-15

    A series of cobalt-doped bismuth molybdates were synthesized and investigated using X-ray powder diffraction, transmission electron microscopy and impedance spectroscopy. The ranges of solid solution were determined. Two new compounds, Bi{sub 1?x}Co{sub x}[Bi{sub 12}O{sub 14}]Mo{sub 5}O{sub 34.5?} (x=0.2) and Bi[Bi{sub 12}O{sub 14}]Mo{sub 5?y}Co{sub y}O{sub 34.5?} (y=0.2), which crystallise in monoclinic unit cells have been examined in detail by diffraction methods. Impedance spectroscopy measurements show that the studied materials are good ionic conductors with conductivity values about 510{sup ?3} Scm{sup ?1} at 973 K and 1.710{sup ?4} Scm{sup ?1} at 623 K, which are similar to conductivity values of yttrium substituted zirconia and (YSZ) gadolinium doped ceria (CGO). - Graphical abstract: Measured and calculated diffraction spectra for Bi{sub 12.8}Co{sub 0.2}Mo{sub 5}O{sub 34?} and projection of the Bi{sub 12.8}Co{sub 0.2}Mo{sub 5}O{sub 34?} crystal structure onto the ac plane. Highlights: The limit of the Bi{sub 1?x}Co{sub x}[Bi{sub 12}O{sub 14}]Mo{sub 5}O{sub 34.5?} homogeneity range is equal to x=0.2. The limit of the Bi[Bi{sub 12}O{sub 14}]Mo{sub 5?y}Co{sub y}O{sub 34.5?} homogeneity range is equal to y=0.2. Solid solutions have monoclinic symmetry. No phase transition is observed. The conductivity at 700 for y=0.2 solid solutions is equal to ?lg ?, Scm{sup ?1}=2.23. The conductivity at 350 for y=0.2 solid solutions is equal to ?lg ?, Scm{sup ?1}=3.74.

  1. Intersubband absorption in CdSe/Zn{sub x}Cd{sub y}Mg{sub 1-x-y}Se self-assembled quantum dot multilayers

    SciTech Connect (OSTI)

    Shen, A.; Lu, H.; Charles, W.; Yokomizo, I.; Tamargo, M. C.; Franz, K. J.; Gmachl, C.; Zhang, S. K.; Zhou, X.; Alfano, R. R.; Liu, H. C.

    2007-02-12

    The authors report the observation of intersubband absorption in multilayers of CdSe/Zn{sub x}Cd{sub y}Mg{sub 1-x-y}Se self-assembled quantum dots. The samples were grown by molecular beam epitaxy on InP substrates. For samples with the CdSe dot layers doped with Cl and with the deposited CdSe equivalent layer thickness between 5.2 and 6.9 ML, peak absorption between 2.5 and 3.5 {mu}m was observed. These materials are promising for intersubband devices operating in the mid- and near-infrared ranges.

  2. Enhancement of photocatalytic properties of Bi{sub 2}WO{sub 6} nanoparticles by Pt deposition

    SciTech Connect (OSTI)

    Mohamed, R.M.; Aazam, E.S.

    2013-09-01

    Graphical abstract: - Highlights: Pt/Bi{sub 2}WO{sub 6} was used for photocatalytic degradation of methyl orange dye. Photocatalytic degradation was dependent on wt% of Pt reaction time, and weight of catalyst. Kinetic study revealed that the photocatalytic degradation of methyl orange dye followed the first order. Catalyst re-use revealed the present photocatalyst remain effective and active after five cycles. - Abstract: Bi{sub 2}WO{sub 6} nanoparticles were prepared using a hydrothermal method, and Pt was immobilized on the surface of Bi{sub 2}WO{sub 6} via a photo-assisted deposition (PAD) method. The samples produced were characterized using X-ray diffraction, ultraviolet and visible spectroscopy, photoluminescence emission spectra, transmission electron microscopy, extended X-ray absorption fine structure, and surface area measurements. Furthermore, the catalytic performance of the Bi{sub 2}WO{sub 6} and Pt/Bi{sub 2}WO{sub 6} samples was examined in the degradation of methyl orange dye (MO) under visible light. The extended X-ray absorption fine structure (EXAFS) results, which showed the presence of peaks assigned to the PtPt at approximately 2.50 ?, indicate the formation of nanoscale Pt features. The UVvis spectral analysis detected a red shift after loading the Pt into the Bi{sub 2}WO{sub 6}. The maximum degradation efficiency achieved was 100% with 0.3 Pt/Bi{sub 2}WO{sub 6} as the photocatalyst after a 30-min reaction time. The catalyst could be reused without any loss in activity for the first five cycles.

  3. Synthesis of BiOI flowerlike hierarchical structures toward photocatalytic reduction of CO{sub 2} to CH{sub 4}

    SciTech Connect (OSTI)

    Zhang, Guojie Su, Aiting; Qu, Jiangwen; Xu, Ying

    2014-07-01

    BiOI can be used for photocatalytic reduction of CO{sub 2} into hydrocarbon fuels under sunlight. - Highlights: Room temperature synthesis of BiOI flowerlike hierarchical structures. BiOI can be used for photocatalytic reduction of CO{sub 2} into hydrocarbon fuels under sunlight. The photocatalytic activity of BiOI is higher than that of P25 TiO{sub 2}. - Abstract: BiOI flowerlike hierarchical structure was synthesized by the direct hydrolysis method hydrolysis at room temperature in the presence of polyvinyl pyrrolidone. As-synthesized BiOI was characterized by powder X-ray diffraction, UVvis diffuse reflectance spectra, X-ray photoelectron spectroscopy spectra, scanning electron microscopy, transmission electron microscopy, and high-resolution transmission electron microscopy. It is a facile way to obtain BiOI flowerlike hierarchical structure photocatalyst for photocatalytic reduction of CO{sub 2} into hydrocarbon fuels under simulated sunlight irradiation without cocatalyst. And the photocatalytic activity of as-synthesized BiOI is higher than that of P25 TiO{sub 2} and bulk BiOI.

  4. Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices

    SciTech Connect (OSTI)

    Peleshchak, R. M.; Guba, S. K.; Kuzyk, O. V.; Kurilo, I. V.; Dankiv, O. O.

    2013-03-15

    The distribution of hydrostatic strains in Bi{sup 3+}-doped InAs quantum dots embedded in a GaAs matrix are calculated in the context of the deformation-potential model. The dependences of strains in the material of spherical InAs quantum dots with substitutional (Bi {yields} As) and interstitial (Bi) impurities on the quantum-dot size are derived. The qualitative correlation of the model with the experiment is discussed. The data on the effect of doping on the morphology of self-assembled InAs:Bi quantum dots in a GaAs matrix are obtained.

  5. Antiferromagnetic Kondo lattice in the layered compound CePd1xBi? and comparison to the superconductor LaPd1xBi?

    SciTech Connect (OSTI)

    Han, Fei; Wan, Xiangang; Phelan, Daniel; Stoumpos, Constantinos C.; Sturza, Mihai; Malliakas, Christos D.; Li, Qing'an; Han, Tian-Heng; Zhao, Qingbiao; Chung, Duck Young; Kanatzidis, Mercouri G.

    2015-07-13

    The layered compound CePd1xBi? with the tetragonal ZrCuSi?-type structure was obtained from excess Bi flux. Magnetic susceptibility data of CePd1xBi? show an antiferromagnetic ordering below 6 K and are anisotropic along the c axis and the ab plane. The anisotropy is attributed to crystal-electric-field (CEF) effects and a CEF model which is able to describe the susceptibility data is given. An enhanced Sommerfeld coefficient ? of 0.191 J mol Ce? K? obtained from specific-heat measurement suggests a moderate Kondo effect in CePd1xBi?. Other than the antiferromagnetic peak at 6 K, the resistivity curve shows a shoulderlike behavior around 75 K which could be attributed to the interplay between Kondo and CEF effects. Magnetoresistance and Hall-effect measurements suggest that the interplay reconstructs the Fermi-surface topology of CePd1xBi? around 75 K. Electronic structure calculations reveal that the Pd vacancies are important to the magnetic structure and enhance the CEF effects which quench the orbital moment of Ce at low temperatures.

  6. Thermochemical and kinetic aspects of the sulfurization of Cu-Sb and Cu-Bi thin films

    SciTech Connect (OSTI)

    Colombara, Diego; Peter, Laurence M.; Rogers, Keith D.; Hutchings, Kyle

    2012-02-15

    CuSbS{sub 2} and Cu{sub 3}BiS{sub 3} are being investigated as part of a search for new absorber materials for photovoltaic devices. Thin films of these chalcogenides were produced by conversion of stacked and co-electroplated metal precursor layers in the presence of elemental sulfur vapour. Ex-situ XRD and SEM/EDS analyses of the processed samples were employed to study the reaction sequence with the aim of achieving compact layer morphologies. A new 'Time-Temperature-Reaction' (TTR) diagram and modified Pilling-Bedworth coefficients have been introduced for the description and interpretation of the reaction kinetics. For equal processing times, the minimum temperature required for CuSbS{sub 2} to appear is substantially lower than for Cu{sub 3}BiS{sub 3}, suggesting that interdiffusion across the interfaces between the binary sulfides is a key step in the formation of the ternary compounds. The effects of the heating rate and sulfur partial pressure on the phase evolution as well as the potential losses of Sb and Bi during the processes have been investigated experimentally and the results related to the equilibrium pressure diagrams obtained via thermochemical computation. - Graphical Abstract: Example of 3D plot showing the equilibrium pressure surfaces of species potentially escaping from chalcogenide films as a function of temperature and sulfur partial pressure. Bi{sub (g)}, Bi{sub 2(g)}, and BiS{sub (g)} are the gaseous species in equilibrium with solid Bi{sub 2}S{sub 3(s)} considered in this specific example. The pressure threshold plane corresponds to the pressure limit above which the elemental losses from 1 {mu}m thick films exceeds 10% of the original content per cm{sup 2} area of film and dm{sup 3} capacity of sulfurization furnace under static atmosphere conditions. The sulfurization temperature/sulfur partial pressure boundaries required to minimise the elemental losses below a given value can be easily read from the 2D projection of the intersection curves into the T-p{sub S2} plane. Highlights: Black-Right-Pointing-Triangle Sulfurization of Sb-Cu and Bi-Cu metal precursors for thin film PV applications. Black-Right-Pointing-Triangle Kinetics shows the rate determining step to be the interdiffusion of binary sulfides. Black-Right-Pointing-Triangle Phase evolution is consistent with Pilling-Bedworth coefficients of Cu, Sb and Bi. Black-Right-Pointing-Triangle Elemental losses can be minimised via the use of equilibrium pressure diagrams.

  7. Theoretical investigation of charge accumulation layer on the Bi-induced InAs(111)-(2??2) surface

    SciTech Connect (OSTI)

    zkaya, S.; Usanmaz, D.; akmak, M.; Alkan, B.; Ellialt?o?lu, ?.

    2014-04-28

    Based on pseudopotential method and density functional theory, we have investigated the stability, atomic geometry, and detailed electronic structures for Bi adsorbates on the InAs(111)-(2??2) surface with three different sites: (i) T{sub 4} (Bi trimer centered on T{sub 4} site), (ii) H{sub 3} (Bi trimer centered on H{sub 3} site), and (iii) T{sub 4}H{sub 3} (which is formed by trimers with opposite orientations: one centered on a T{sub 4} site and the other on a H{sub 3}). Our total energy calculations suggest that adsorption on the T{sub 4}H{sub 3} site is the energetically most stable structure among the proposed structures. The electronic band structure calculations reveal the existence of an accumulation layer between InAs(111) surface and Bi adatoms for T{sub 4}H{sub 3}. Charge density difference results indicate significant amount of the charge accumulation on the Bi/InAs interface.

  8. Enhanced open voltage of BiFeO{sub 3} polycrystalline film by surface modification of organolead halide perovskite

    SciTech Connect (OSTI)

    Zhao, Pengjun; Bian, Liang; Xu, Jinbao Chang, Aimin; Wang, Lei

    2014-07-07

    Inorganic-organolead halide perovskite CH{sub 3}NH{sub 3}PbI{sub 3} modified BiFeO{sub 3} polycrystalline film has been established. The composite photoelectrode presents much larger open voltage and several magnitudes superior photoelectric conversion performance in comparison to the ordinary BiFeO{sub 3} polycrystalline film. The I-V curve shows that the short-circuit current (J{sub sc}) is 1.74?mAcm{sup ?2} and open-circuit voltage (V{sub oc}) is 1.62?V, the device's photon to current efficiency is over 1%. The large open voltage and high photovoltaic efficiency is believed to attributed to the spontaneous polarization of composite perovskite induced by BiFeO{sub 3} lattice and modified reduced work function of the modified BiFeO{sub 3} surface. Our results clearly show that the present BiFeO{sub 3}-CH{sub 3}NH{sub 3}PbI{sub 3} planar device is capable to generate a large voltage in macro scale under visible light, leading an approach to further applications on photodetectors and optoelectronic switch.

  9. Microwave synthesis and electrochemical characterization of mesoporous carbon@Bi{sub 2}O{sub 3} composites

    SciTech Connect (OSTI)

    Xia, Nannan; Yuan, Dingsheng; Zhou, Tianxiang; Chen, Jingxing; Mo, Shanshan; Liu, Yingliang

    2011-05-15

    Graphical abstract: An efficient and quick microwave method has been employed to prepare worm-like mesoporous carbon@Bi{sub 2}O{sub 3} composites for the first time. The electrochemical measurement shows the worm-like mesoporous carbon@Bi{sub 2}O{sub 3} composites exhibits excellent capacitance performance and the maximum specific capacitance is up to 386 F g{sup -1}. Research highlights: {yields} An efficient and quick microwave method has been employed. {yields} A worm-like mesoporous carbon@Bi{sub 2}O{sub 3} composites have been successfully prepared. {yields} This composite exhibits excellent capacitance performance. {yields} This composite could be a potential electrode material for the supercapacitors. -- Abstract: An efficient and quick microwave method has been employed to prepare worm-like mesoporous carbon@Bi{sub 2}O{sub 3} composites for the first time. As-prepared products have been characterized by X-ray diffraction, N{sub 2} adsorption-desorption, scanning electron microscopy, transmission electron microscopy and inductive coupled plasma atomic emission spectroscopy. The electrochemical measurement shows the worm-like mesoporous carbon@Bi{sub 2}O{sub 3} composites exhibits excellent capacitance performance and the maximum specific capacitance reaches 386 F g{sup -1}, three times more than the pure worm-like mesoporous carbon.

  10. Flux pinning by precipitates in the Bi-Sr-Ca-Cu-O system

    DOE Patents [OSTI]

    Shi, Donglu

    1992-01-01

    A fundamental pinning mechanism has been identified in the Bi-Sr-Ca-Cu-O system. The pinning strength has been greatly increased by the introduction of calcium- and copper-rich precipitates into the sample matrix. The calcium and copper are supersaturated in the system by complete melting, and the fine calcium and copper particles precipitated during subsequent crystallization anneal to obtain the superconducting phases. The intragrain critical current density has been increased from the order of 10.sup.5 A/cm.sup.2 to 10.sup.7 A/cm.sup.2 at 5 T.

  11. Synthesis and characterization of Bi-doped Mg{sub 2}Si thermoelectric materials

    SciTech Connect (OSTI)

    Fiameni, S.; Battiston, S.; Boldrini, S.; Famengo, A.; Agresti, F.; Barison, S.; Fabrizio, M.

    2012-09-15

    The Mg{sub 2}Si-based alloys are promising candidates for thermoelectric energy conversion for the middle high range of temperature. They are very attractive as they could replace lead-based compounds due to their low cost and non toxicity. They could also result in thermoelectric generator weight reduction (a key feature for the automotive application field). The high value of thermal conductivity of the silicide-based materials could be reduced by increasing the phonon scattering in the presence of nanosized crystalline grains without heavily interfering with the electrical conductivity of the thermoelectric material. Nanostructured materials were obtained under inert atmosphere through ball milling, thermal treatment and spark plasma sintering processes. In particular, the role of several bismuth doping amounts in Mg{sub 2}Si were investigated (Mg{sub 2}Si:Bi=1:x for x=0.01, 0.02 and 0.04 M ratio). The morphology, the composition and the structure of the samples were characterized by FE-SEM, EDS and XRD analyses after each process step. Moreover, the Seebeck coefficient analyses at high temperature and the electrical and thermal conductivity of the samples are presented in this work. The nanostructuring processes were affect by the MgO amount increase which influenced the thermoelectric properties of the samples mainly by reducing the electrical conductivity. With the aim of further increasing the scattering phenomena by interface or boundary effect, carbon nanostructures named Single Wall Carbon Nanohorns were added to the Mg{sub 2}Si in order to produce a nanocomposite material. The influence of the nanostructured filler on the thermoelectric material properties is also discussed. - Graphical abstract: Figure of merit (ZT) of Bi-doped samples and undoped Mg{sub 2}Si. A maximum ZT value of 0.39 at 600 Degree-Sign C was obtained for the nanocomposite material obtained adding Single Wall Carbon Nanohorns to the Bi 0.02 at% doped silicide. Highlights: Black-Right-Pointing-Pointer Role of Bi doping amounts in Mg{sub 2}Si and thermoelectric characterization up to 600 Degree-Sign C Black-Right-Pointing-Pointer Nanocomposite materials synthesized by ball milling and Spark Plasma Sintering Black-Right-Pointing-Pointer Effect on scattering phenomena of Single Wall Carbon Nanohorns added to Mg{sub 2}Si Black-Right-Pointing-Pointer Importance of oxidation phenomena in nanostructured materials.

  12. Magnetic origin of dielectric transition in BiFeO{sub 3}

    SciTech Connect (OSTI)

    Ray, J.; Biswal, A. K.; Vishwakarma, P. N.; Babu, P. D.; Siruguri, V.

    2014-04-24

    Magnetic relaxation measurements at 5K, 50K and 120K on BiFeO{sub 3} prepared by sol-gel auto combustion method shows stretched -exponential decay. These results shows the two factors viz, cooperative dynamics and rate of dynamics of spin, may be responsible for the low temperature magnetic-glassy behavior, concluded from bifurcation of zero field cooled (ZFC) and field cooled (FC) data of dc magnetization. Temperature dependent dielectric measurement shows a possible phase transition, seen in the dielectric-relaxation time and dielectric constant in the range 200 240K. Comparison of dielectric and magnetization data indicates a possibility of magneto-electric coupling.

  13. Bi-Sr-Ca-Cu-O surface studied by means of scanning tunnelling microscope

    SciTech Connect (OSTI)

    Witek, A.; Dabkowski, A.; Rauluszkiewicz, J.

    1989-03-10

    Surface topography of the high-T/sub c/ superconductor BiSrCaCu/sub 2/O/sub x/ has been investigated by means of scanning tunnelling microscope. The measurements were performed on the natural surface of ceramics material in air at room temperature. It can be deduced from the surface images, that bulk orthorhombic crystal structure extends to the surface. The surface seems to be uniform metallic in character and not drastically contaminated. Regular steps observed on the surface correspond to the dimension of the unit cell in z direction or its multiples.

  14. Valley filter from magneto-tunneling between single and bi-layer graphene

    SciTech Connect (OSTI)

    Pratley, L.; Zülicke, U.

    2014-02-24

    We consider tunneling transport between two parallel graphene sheets; where one is a single-layer sample and the other one a bi-layer. In the presence of an in-plane magnetic field, the interplay between combined energy and momentum conservation in a tunneling event and the distinctive chiral nature of charge carriers in the two systems turns out to favor tunneling of electrons from one of the two valleys in the graphene Brillouin zone. Adjusting the field strength enables manipulation of the valley polarization of the current, which reaches its maximum value of 100% concomitantly with a maximum of the tunneling conductance.

  15. Tunable catalytic properties of bi-functional mixed oxides in ethanol conversion to high value compounds

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ramasamy, Karthikeyan K.; Gray, Michel; Job, Heather; Smith, Colin; Wang, Yong

    2016-02-03

    Here, a highly versatile ethanol conversion process to selectively generate high value compounds is presented here. By changing the reaction temperature, ethanol can be selectively converted to >C2 alcohols/oxygenates or phenolic compounds over hydrotalcite derived bi-functional MgO–Al2O3 catalyst via complex cascade mechanism. Reaction temperature plays a role in whether aldol condensation or the acetone formation is the path taken in changing the product composition. This article contains the catalytic activity comparison between the mono-functional and physical mixture counterpart to the hydrotalcite derived mixed oxides and the detailed discussion on the reaction mechanisms.

  16. Expanding the Repertoire of Chalcogenide Nanocrystal Networks: Ag2Se Gels

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Aerogels by Cation Exchange Reactions | Energy Frontier Research Centers Expanding the Repertoire of Chalcogenide Nanocrystal Networks: Ag2Se Gels and Aerogels by Cation Exchange Reactions Home Author: Q. Yao, I. U. Arachchige, S. L. Brock Year: 2009 Abstract: Cation exchange is shown to be a simple and efficient method to prepare nanostructured Ag2Se gels and aerogels from CdSe gel precursors. Treatment of CdSe wet gels with AgNO3yields, for the first time, Ag2Se gels, and these are

  17. Rapid formation of phase-clean 110 K (Bi-2223) powders derived via freeze-drying process

    DOE Patents [OSTI]

    Balachandran, Uthamalingam

    1996-01-01

    A process for the preparation of amorphous precursor powders for Pb-doped Bi.sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.x (2223) includes a freeze-drying process incorporating a splat-freezing step. The process generally includes splat freezing a nitrate solution of Bi, Pb, Sr, Ca, and Cu to form flakes of the solution without any phase separation; grinding the frozen flakes to form a powder; freeze-drying the frozen powder; heating the dried powder to form a dry green precursor powders; denitrating the green-powders; heating the denitrated powders to form phase-clean Bi-2223 powders. The grain boundaries of the 2223 grains appear to be clean, leading to good intergrain contact between 2223 grains.

  18. Rapid formation of phase-clean 110 K (Bi-2223) powders derived via freeze-drying process

    DOE Patents [OSTI]

    Balachandran, U.

    1996-06-04

    A process for the preparation of amorphous precursor powders for Pb-doped Bi{sub 2}Sr{sub 2} Ca{sub 2}Cu{sub 3}O{sub x} (2223) includes a freeze-drying process incorporating a splat-freezing step. The process generally includes splat freezing a nitrate solution of Bi, Pb, Sr, Ca, and Cu to form flakes of the solution without any phase separation; grinding the frozen flakes to form a powder; freeze-drying the frozen powder; heating the dried powder to form a dry green precursor powders; denitrating the green-powders; heating the denitrated powders to form phase-clean Bi-2223 powders. The grain boundaries of the 2223 grains appear to be clean, leading to good intergrain contact between 2223 grains. 11 figs.

  19. Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films

    SciTech Connect (OSTI)

    Klein, C.; Vollmers, N. J.; Gerstmann, U.; Zahl, P.; Lukermann, D.; Jnawali, G.; Pfnur, H.; Sutter, P.; Tegenkamp, C.; Schmidt, W. G.; Horn-von Hoegen, M.

    2015-05-27

    By combining scanning tunneling microscopy with density functional theory it is shown that the Bi(111) surface provides a well-defined incorporation site in the first bilayer that traps highly coordinating atoms such as transition metals (TMs) or noble metals. All deposited atoms assume exactly the same specific sevenfold coordinated subsurface interstitial site while the surface topography remains nearly unchanged. Notably, 3d TMs show a barrier-free incorporation. The observed surface modification by barrier-free subsorption helps to suppress aggregation in clusters. Thus, it allows a tuning of the electronic properties not only for the pure Bi(111) surface, but may also be observed for topological insulators formed by substrate-stabilized Bi bilayers.

  20. Phonon and magnon scattering of Bi{sub 2}Fe{sub 4}O{sub 9} ceramic

    SciTech Connect (OSTI)

    Sharma, Poorva E-mail: vdinesh33@rediffmail.com; Kumar, Ashwini E-mail: vdinesh33@rediffmail.com; Varshney, Dinesh E-mail: vdinesh33@rediffmail.com

    2014-04-24

    We report the phonon structure of Bi{sub 2}Fe{sub 4}O{sub 9} ceramics as synthesized by solid-state reaction route. Rietveld refined X-ray diffraction patterns confirmed the formation of single-phase perovskite structure and all the peaks of Bi{sub 2}Fe{sub 4}O{sub 9} perfectly indexed to the orthorhombic (space group Pbam). Raman scattering measurements identifies 12A{sub g}+1B{sub 2g}+1B{sub 3g} Raman active optical phonon modes. Apart from phonon scattering, mode at 470 cm{sup ?1} is observed which is due to magnon scattering. The P-E loop infers paraelectric nature of Bi{sub 2}Fe{sub 4}O{sub 9}.

  1. Elastic and surface energies: Two key parameters for CdSe quantum dot formation

    SciTech Connect (OSTI)

    Robin, Ivan-Christophe; Andre, Regis; Bougerol, Catherine; Aichele, Thomas; Tatarenko, Serge

    2006-06-05

    The two-dimensional-three-dimensional transition of a strained CdSe layer on (001) ZnSe induced by the use of amorphous selenium is studied. To precisely control the thickness of the CdSe layer, atomic layer epitaxy growth mode is used. Atomic force microscopy and reflection high-energy electron diffraction measurements reveal the formation of CdSe islands when 3 ML (monolayers) of CdSe, corresponding to the critical thickness, are deposited. When only 2.5 ML of CdSe are deposited another relaxation mechanism is observed, leading to the appearance of strong undulations on the surface. For a 3 ML thick CdSe layer, transmission electron microscopy images indicate that the formation of the islands occurs only after the amorphous selenium desorption.

  2. Method of synthesizing and growing copper-indium-diselenide (CuInSe.sub.2) crystals

    DOE Patents [OSTI]

    Ciszek, Theodore F.

    1987-01-01

    A process for preparing CuInSe.sub.2 crystals includes melting a sufficient quantity of B.sub.2 O.sub.3 along with stoichiometric quantities of Cu, In, and Se in a crucible in a high pressure atmosphere of inert gas to encapsulate the CuInSe.sub.2 melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2 percent over the stoichiometric quantity is preferred to make up for small amounts of Se lost in the process. The crystal is grown by inserting a seed crystal through the B.sub.2 O.sub.3 encapsulate into contact with the CuInSe.sub.2 melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.

  3. Method of synthesizing and growing copper-indium-diselenide (CuInSe/sub 2/) crystals

    DOE Patents [OSTI]

    Ciszek, T.F.

    1984-11-29

    A process for preparing CuInSe/sub 2/ crystals includes melting a sufficient quantity of B/sub 2/O/sub 2/ along with stochiometric quantities of Cu, In, and Se in a crucible in a high-pressure atmosphere of inert gas to encapsulate the CuInSe/sub 2/ melt and confine the Se to the crucible. Additional Se in the range of 1.8 to 2.2% over the stochiometric quantity is preferred to make up for small amounts of Se lost in the process. The melt can then be cooled slowly to form the crystal as direct solidification, or the crystal can be grown by inserting a seed crystal through the B/sub 2/O/sub 3/ encapsulate into contact with the CuInSe/sub 2/ melt and withdrawing the seed upwardly to grow the crystal thereon from the melt.

  4. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  5. Quasiparticle dynamics across the full Brillouin zone of Bi2Sr2CaCu2O8+δ

    Office of Scientific and Technical Information (OSTI)

    traced with ultrafast time and angle-resolved photoemission spectroscopy (Journal Article) | SciTech Connect Quasiparticle dynamics across the full Brillouin zone of Bi2Sr2CaCu2O8+δ traced with ultrafast time and angle-resolved photoemission spectroscopy Citation Details In-Document Search Title: Quasiparticle dynamics across the full Brillouin zone of Bi2Sr2CaCu2O8+δ traced with ultrafast time and angle-resolved photoemission spectroscopy A hallmark in the cuprate family of

  6. Quantum oscillations in the heavy-fermion compound YbPtBi

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mun, E.; Bud'ko, S. L.; Lee, Y.; Martin, C.; Tanatar, M. A.; Prozorov, R.; Canfield, P. C.

    2015-08-01

    We present quantum oscillations observed in the heavy-fermion compound YbPtBi in magnetic fields far beyond its field-tuned, quantum critical point. Quantum oscillations are observed in magnetic fields as low as 60 kOe at 60 mK and up to temperatures as high as 3 K, which confirms the very high quality of the samples as well as the small effective mass of the conduction carriers far from the quantum critical point. Although the electronic specific heat coefficient of YbPtBi reaches ~7.4 J/molK2 in zero field, which is one of the highest effective mass values among heavy-fermion systems, we suppress it quicklymore » by an applied magnetic field. The quantum oscillations were used to extract the quasiparticle effective masses of the order of the bare electron mass, which is consistent with the behavior observed in specific heat measurements. Furthermore, such small effective masses at high fields can be understood by considering the suppression of Kondo screening.« less

  7. Texas Bi-Fuel Liquefied Petroleum Gas Pickup Study: Final Report

    SciTech Connect (OSTI)

    Huang, Y.; Matthews, R. D.; Popova, E. T.

    1999-05-24

    Alternative fuels may be an effective means for decreasing America's dependence on imported oil; creating new jobs; and reducing emissions of greenhouse gases, exhaust toxics, and ozone-forming hydrocarbons. However, data regarding in-use fuel economy and maintenance characteristics of alternative fuel vehicles (AFVs) have been limited in availability. This study was undertaken to compare the operating and maintenance characteristics of bi-fuel vehicles (which use liquefied petroleum gas, or propane, as the primary fuel) to those of nominally identical gasoline vehicles. In Texas, liquefied petroleum gas is one of the most widely used alternative fuels. The largest fleet in Texas, operated by the Texas Department of Transportation (TxDOT), has hundred of bi-fuel (LPG and gasoline) vehicles operating in normal daily service. The project was conducted over a 2-year period, including 18 months (April 1997-September 1998) of data collection on operations, maintenance, and fuel consumption of the vehicles under study. This report summarizes the project and its results.

  8. Understanding strain-induced phase transformations in BiFeO3 thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dixit, Hemant; Beekman, Christianne; Schlepütz, Christian M.; Siemons, Wolter; Yang, Yongsoo; Senabulya, Nancy; Clarke, Roy; Chi, Miaofang; Christen, Hans M.; Cooper, Valentino R.

    2015-05-01

    Experiments demonstrate that under large epitaxial strain a coexisting striped phase emerges in BiFeO₃ thin films, which comprises a tetragonal-like (T´) and an intermediate S´ polymorph. It exhibits a relatively large piezoelectric response when switching between the coexisting phase and a uniform T´ phase. This strain-induced phase transformation is investigated through a synergistic combination of first-principles theory and experiments. The results show that the S´ phase is energetically very close to the T´ phase, but is structurally similar to the bulk rhombohedral (R) phase. By fully characterizing the intermediate S´ polymorph, it is demonstrated that the flat energy landscape resultingmore » in the absence of an energy barrier between the T´ and S´ phases fosters the above-mentioned reversible phase transformation. This ability to readily transform between the S´ and T´ polymorphs, which have very different octahedral rotation patterns and c/a ratios, is crucial to the enhanced piezoelectricity in strained BiFeO3 films. Additionally, a blueshift in the band gap when moving from R to S´ to T´ is observed. These results emphasize the importance of strain engineering for tuning electromechanical responses or, creating unique energy harvesting photonic structures, in oxide thin film architectures.« less

  9. Giant elastic tunability in strained BiFeO3 near an electrically induced phase transition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yu, Pu; Vasudevan, Rama K.; Tselev, Alexander; Xue, Fei; Chen, Long -Qing; Maksymovych, Petro; Kalinin, Sergei V.; Balke, Nina; Li, Q.; Cao, Y.; et al

    2015-01-01

    Elastic anomalies are signatures of phase transitions in condensed matters and have traditionally been studied using various techniques spanning from neutron scattering to static mechanical testing. Here, using band-excitation elastic/piezoresponse spectroscopy, we probed sub-MHz elastic dynamics of a tip bias-induced rhombohedral–tetragonal phase transition of strained (001)-BiFeO3 (rhombohedral) ferroelectric thin films from ~103 nm3 sample volumes. Near this transition, we observed that the Young's modulus intrinsically softens by over 30% coinciding with 2-3 folds enhancement of local piezoresponse. Coupled with phase-field modeling, we also addressed the influence of polarization switching and mesoscopic structural heterogeneities (e.g., domain walls) on the kinetics ofmore » this phase transition, thereby providing fresh insights into the morphotropic phase boundary (MPB) in ferroelectrics. Moreover, the giant electrically tunable elastic stiffness and corresponding electromechanical properties observed here suggest potential applications of BiFeO3 in next-generation frequency-agile electroacoustic devices, based on utilization of the soft modes underlying successive ferroelectric phase transitions.« less

  10. Understanding strain-induced phase transformations in BiFeO3 thin films

    SciTech Connect (OSTI)

    Dixit, Hemant; Beekman, Christianne; Schlepütz, Christian M.; Siemons, Wolter; Yang, Yongsoo; Senabulya, Nancy; Clarke, Roy; Chi, Miaofang; Christen, Hans M.; Cooper, Valentino R.

    2015-05-01

    Experiments demonstrate that under large epitaxial strain a coexisting striped phase emerges in BiFeO₃ thin films, which comprises a tetragonal-like (T´) and an intermediate S´ polymorph. It exhibits a relatively large piezoelectric response when switching between the coexisting phase and a uniform T´ phase. This strain-induced phase transformation is investigated through a synergistic combination of first-principles theory and experiments. The results show that the S´ phase is energetically very close to the T´ phase, but is structurally similar to the bulk rhombohedral (R) phase. By fully characterizing the intermediate S´ polymorph, it is demonstrated that the flat energy landscape resulting in the absence of an energy barrier between the T´ and S´ phases fosters the above-mentioned reversible phase transformation. This ability to readily transform between the S´ and T´ polymorphs, which have very different octahedral rotation patterns and c/a ratios, is crucial to the enhanced piezoelectricity in strained BiFeO3 films. Additionally, a blueshift in the band gap when moving from R to S´ to T´ is observed. These results emphasize the importance of strain engineering for tuning electromechanical responses or, creating unique energy harvesting photonic structures, in oxide thin film architectures.

  11. Quantum oscillations in the heavy-fermion compound YbPtBi

    SciTech Connect (OSTI)

    Mun, E.; Bud'ko, S. L.; Lee, Y.; Martin, C.; Tanatar, M. A.; Prozorov, R.; Canfield, P. C.

    2015-08-01

    We present quantum oscillations observed in the heavy-fermion compound YbPtBi in magnetic fields far beyond its field-tuned, quantum critical point. Quantum oscillations are observed in magnetic fields as low as 60 kOe at 60 mK and up to temperatures as high as 3 K, which confirms the very high quality of the samples as well as the small effective mass of the conduction carriers far from the quantum critical point. Although the electronic specific heat coefficient of YbPtBi reaches ~7.4 J/molK2 in zero field, which is one of the highest effective mass values among heavy-fermion systems, we suppress it quickly by an applied magnetic field. The quantum oscillations were used to extract the quasiparticle effective masses of the order of the bare electron mass, which is consistent with the behavior observed in specific heat measurements. Furthermore, such small effective masses at high fields can be understood by considering the suppression of Kondo screening.

  12. Spin correlations and electron transport in MnBi:Au films

    SciTech Connect (OSTI)

    Kharel, P.; Skomski, R.; Sellmyer, D. J.

    2011-04-01

    The structural, magnetic, and electron transport properties of Mn{sub 55-x}Au{sub x}Bi{sub 45} (x = 0, 4.5) thin films prepared by magnetron sputtering have been investigated. The magnetization of the MnBi films decreases and the coercivity increases due to Au doping. The temperature dependence of resistivity between 2 to 300 K shows that the films are metallic but the 4.5% Au-doped film shows a Kondo behavior with resistance minimum at 10.2 K. The magnetoresistance is anisotropic and the positive transverse magnetoresistance is significantly enhanced (16.3% at 70 kOe) by Au doping. We interpret these data in terms of a model in which Au atoms preferentially substitute for Mn atoms on the Mn lattice, and some Mn atoms are displaced to interstitial sites in the NiAs structure. These interstitial Mn atoms are coupled antiferromagnetically to the Mn atoms on the original Mn lattice leading to the large decrease in magnetization, Kondo effect, and the positive magnetoresistance.

  13. Pushing the Theoretical Limit of Li-CFx Batteries: A Tale of Bi-functional Electrolyte

    SciTech Connect (OSTI)

    Rangasamy, Ezhiylmurugan; Li, Juchuan; Sahu, Gayatri; Dudney, Nancy J; Liang, Chengdu

    2014-01-01

    In a typical battery, electrodes deliver capacities less or equal the theoretical maxima of the electrode materials.1 The inert electrolyte functions solely as the ionic conductor without contribution to the cell capacity because of its distinct mono-function in the concept of conventional batteries. Here we demonstrate that the most energy-dense Li-CFx battery2 delivers a capacity exceeding the theoretical maximum of CFx with a solid electrolyte of Li3PS4 (LPS) that has dual functions: as the inert electrolyte at the anode and the active component at the cathode. Such a bi-functional electrolyte reconciles both inert and active characteristics through a synergistic discharge mechanism of CFx and LPS. Li3PS4 is known as an inactive solid electrolyte with a broad electrochemical window over 5 V.3 The synergy at the cathode is through LiF, the discharge product of CFx, which activates the electrochemical discharge of LPS at a close electrochemical potential of CFx. Therefore, the solid-state Li-CFx batteries output 126.6% energy beyond their theoretic limits without compromising the stability of the cell voltage. The extra energy comes from the electrochemical discharge of LPS, the inert electrolyte. This bi-functional electrolyte revolutionizes the concept of conventional batteries and opens a new avenue for the design of batteries with an unprecedentedly high energy density.

  14. Modification of Bi:YIG film properties by substrate surface ion pre-treatment

    SciTech Connect (OSTI)

    Shaposhnikov, A.N.; Prokopov, A.R.; Karavainikov, A.V.; Berzhansky, V.N.; Mikhailova, T.V.; Kotov, V.A.; Balabanov, D.E.; Sharay, I.V.; Salyuk, O.Y.; Vasiliev, M.; Golub, V.O.

    2014-07-01

    Highlights: Effects of substrates ion beam treatment on magnetoptical properties Bi:YIG films. Substrate surface damage results in sign inversion of the magneto-optical effects. Atomically smooth films growth takes place on low energy ions treated substrates. High energy ions treatment results in selective nucleation mechanism of the growth. - Abstract: The effect of a controlled ion beam pre-treatment of (1 1 1)-oriented Gd{sub 3}Ga{sub 5}O{sub 12} substrates on the magneto-optical properties and surface morphology of the ultrathin bismuth-substituted yttriumiron garnet films with a composition Bi{sub 2.8}Y{sub 0.2}Fe{sub 5}O{sub 12} was studied. It has been shown that the observed sign inversion of magneto-optical effects (Faraday rotation and magnetic circular dichroism) observed in films that were deposited on the GGG substrate pre-treated by 1 keV and 4 keV Ar{sup +} ion beams is a result of the substrate surface amorphization caused by the ion bombardment.

  15. Atomistic tight-binding study of electronic structure and interband optical transitions in GaBi{sub x}As{sub 1?x}/GaAs quantum wells

    SciTech Connect (OSTI)

    Usman, Muhammad; O'Reilly, Eoin P.

    2014-02-17

    Large-supercell tight-binding calculations are presented for GaBi{sub x}As{sub 1?x}/GaAs single quantum wells (QWs) with Bi fractions x of 3.125% and 12.5%. Our results highlight significant distortion of the valence band states due to the alloy disorder. A large full-width-half-maximum (FWHM) is estimated in the ground state interband transition energy (?33?meV) at 3.125% Bi, consistent with recent photovoltage measurements for similar Bi compositions. Additionally, the alloy disorder effects are predicted to become more pronounced as the QW width is increased. However, they are less strong at the higher Bi composition (12.5%) required for the design of temperature-stable lasers, with a calculated FWHM of ?23.5?meV at x?=?12.5%.

  16. Electrical properties of In{sub 2}Se{sub 3} single crystals and photosensitivity of Al/In{sub 2}Se{sub 3} Schottky barriers

    SciTech Connect (OSTI)

    Bodnar, I. V.; Ilchuk, G. A.; Petrus', R. Yu.; Rud', V. Yu.; Rud', Yu. V.; Serginov, M.

    2009-09-15

    In{sub 2}Se{sub 3} single crystals {approx}40 mm long and 14 mm in diameter were grown by the Bridgman method. The composition of grown single crystals and their crystal structure were determined. The conductivity ({sigma}) and Hall constant (R) of grown single crystals were measured and the first Schottky barriers Al/n-In{sub 2}Se{sub 3} were fabricated. Rectification and photovoltaic effect were detected in the new structures. Based on the study of the photosensitivity spectra of Al/n-In{sub 2}Se{sub 3} structures, the nature of the interband transitions and band gap of In{sub 2}Se{sub 3} crystals were determined. It was concluded that the new structures can be applied to develop broadband photoconverters of optical radiation.

  17. Superconducting and magneto-transport properties of BiS{sub 2} based superconductor PrO{sub 1-x}F{sub x}BiS{sub 2} (x?=?0 to 0.9)

    SciTech Connect (OSTI)

    Jha, Rajveer; Kishan, Hari; Awana, V. P. S., E-mail: awana@mail.npindia.org [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India)

    2014-01-07

    We report superconducting properties of PrO{sub 1-x}F{sub x}BiS{sub 2} compounds, synthesized by the vacuum encapsulation technique. The synthesized PrO{sub 1-x}F{sub x}BiS{sub 2} (x?=?0.1, 0.3, 0.5, 0.7, and 0.9) samples are crystallized in a tetragonal P4/nmm space group. Both transport and DC magnetic susceptibility measurements showed bulk superconductivity below 4?K. The maximum T{sub c} is obtained for x?=?0.7 sample. Under applied magnetic field, both T{sub c}{sup onset} and T{sub c} (??=?0) decrease to lower temperatures. We estimated highest upper critical field [H{sub c2}(0)] for PrO{sub 0.3}F{sub 0.7}BiS{sub 2} sample to be above 4?T (Tesla). The thermally activated flux flow activation energy (U{sub 0}) is estimated 54.63?meV in 0.05 T field for PrO{sub 0.3}F{sub 0.7}BiS{sub 2} sample. Hall measurement results showed that electron charge carriers are the dominating ones in these compounds. Thermoelectric effects (Thermal conductivity and Seebeck coefficient) data suggest strong electron-electron correlations in this material.

  18. Pulsed laser deposition of Mn doped CdSe quantum dots for improved solar cell performance

    SciTech Connect (OSTI)

    Dai, Qilin; Wang, Wenyong E-mail: jtang2@uwyo.edu; Tang, Jinke E-mail: jtang2@uwyo.edu; Sabio, Erwin M.

    2014-05-05

    In this work, we demonstrate (1) a facile method to prepare Mn doped CdSe quantum dots (QDs) on Zn{sub 2}SnO{sub 4} photoanodes by pulsed laser deposition and (2) improved device performance of quantum dot sensitized solar cells of the Mn doped QDs (CdSe:Mn) compared to the undoped QDs (CdSe). The band diagram of photoanode Zn{sub 2}SnO{sub 4} and sensitizer CdSe:Mn QD is proposed based on the incident-photon-to-electron conversion efficiency (IPCE) data. Mn-modified band structure leads to absorption at longer wavelengths than the undoped CdSe QDs, which is due to the exchange splitting of the CdSe:Mn conduction band by the Mn dopant. Three-fold increase in the IPCE efficiency has also been observed for the Mn doped samples.

  19. Magnetic BiMn-α phase synthesis prediction: First-principles calculation, thermodynamic modeling and nonequilibrium chemical partitioning

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhou, S. H.; Liu, C.; Yao, Y. X.; Du, Y.; Zhang, L. J.; Wang, C. -Z.; Ho, K. -M.; Kramer, M. J.

    2016-04-29

    BiMn-α is promising permanent magnet. Due to its peritectic formation feature, there is a synthetic challenge to produce single BiMn-α phase. The objective of this study is to assess driving force for crystalline phase pathways under far-from-equilibrium conditions. First-principles calculations with Hubbard U correction are performed to provide a robust description of the thermodynamic behavior. The energetics associated with various degrees of the chemical partitioning are quantified to predict temperature, magnetic field, and time dependence of the phase selection. By assessing the phase transformation under the influence of the chemical partitioning, temperatures, and cooling rate from our calculations, we suggestmore » that it is possible to synthesize the magnetic BiMn-α compound in a congruent manner by rapid solidification. The external magnetic field enhances the stability of the BiMn-α phase. In conclusion, the compositions of the initial compounds from these highly driven liquids can be far from equilibrium.« less

  20. Two-dimensional topological crystalline insulator phase in Sb/Bi planar honeycomb with tunable Dirac gap

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hsu, Chia -Hsiu; Huang, Zhi -Quan; Crisostomo, Christian P.; Yao, Liang -Zi; Chuang, Feng -Chuan; Liu, Yu -Tzu; Wang, Baokai; Hsu, Chuang -Han; Lee, Chi -Cheng; Lin, Hsin; et al

    2016-01-14

    We predict planar Sb/Bi honeycomb to harbor a two-dimensional (2D) topological crystalline insulator (TCI) phase based on first-principles computations. Although buckled Sb and Bi honeycombs support 2D topological insulator (TI) phases, their structure becomes planar under tensile strain. The planar Sb/Bi honeycomb structure restores the mirror symmetry, and is shown to exhibit non-zero mirror Chern numbers, indicating that the system can host topologically protected edge states. Our computations show that the electronic spectrum of a planar Sb/Bi nanoribbon with armchair or zigzag edges contains two Dirac cones within the band gap and an even number of edge bands crossing themore » Fermi level. Lattice constant of the planar Sb honeycomb is found to nearly match that of hexagonal-BN. As a result, the Sb nanoribbon on hexagonal-BN exhibits gapped edge states, which we show to be tunable by an out-of the-plane electric field, providing controllable gating of edge state important for device applications.« less

  1. Thermal conductivity of Bi{sub 2}Te{sub 3} tilted nanowires, a molecular dynamics study

    SciTech Connect (OSTI)

    Li, Shen Lacroix, David; Termentzidis, Konstantinos; Chaput, Laurent; Stein, Nicolas; Frantz, Cedric

    2015-06-08

    Evidence for an excellent compromise between structural stability and low thermal conductivity has been achieved with tilted Bi{sub 2}Te{sub 3} nanowires. The latter ones were recently fabricated and there is a need in modeling and characterization. The structural stability and the thermal conductivity of Bi{sub 2}Te{sub 3} nanowires along the tilted [015]* direction and along the [010] direction have been explored. For the two configurations of nanowires, the effect of the length and the cross section on the thermal conductivity is discussed. The thermal conductivity of infinite size tilted nanowire is 0.34?W/m K, significantly reduced compared to nanowire along the [010] direction (0.59?W/m K). This reveals that in Bi{sub 2}Te{sub 3} nanowires the structural anisotropy can be as important as size effects to reduce the thermal conductivity. The main reason is the reduction of the phonon mean free path which is found to be 1.7?nm in the tilted nanowires, compared to 5.3?nm for the nanowires along the [010] direction. The fact that tilted Bi{sub 2}Te{sub 3} nanowire is mechanically stable and it has extremely low thermal conductivity suggests these nanowires as a promising material for future thermoelectric generation application.

  2. Evidence for the synthesis of {sup 267}110 produced by the {sup 59}Co + {sup 209}Bi reaction

    SciTech Connect (OSTI)

    Ghiorso, A.; Lee, D.; Somerville, L.P. |

    1994-09-01

    An experiment to synthesize element 110 by the {sup 59}Co+{sup 209}Bi reaction has bee performed at the SuperHILAC at the Lawrence Berkeley Laboratory. One event with many of the expected characteristics of a successful of {sup 267}110 was observed. This event corresponds to a production cross section of about one picobarn.

  3. The photocatalysis of Bi{sub 2}MoO{sub 6} under the irradiation of blue LED

    SciTech Connect (OSTI)

    Sun, Yuanyuan; Wang, Wenzhong Zhang, Ling; Sun, Songmei

    2013-10-15

    Graphical abstract: - Highlights: • ·OH trap and hole sink were involved to investigate the active radicals. • Holes play a more important role in the degradation of RhB. • The ·OH were related to the decomposition of phenol. • The ·O{sub 2}-played a leading role in the photodegradation of phenol. • Blue LED is competitive and promising alternative for the future application. - Abstract: Bi{sub 2}MoO{sub 6} has been reported as a promising photocatalyst in wastewater treatment. The active radicals generated over the Bi{sub 2}MoO{sub 6} during the photocatalytic process were thought to be hydroxyl radical (·OH) but have not been proved. Herein, Bi{sub 2}MoO{sub 6} with nanoplate like morphology was synthesized and its photocatalytic performances in the degradation of rhodamine B (RhB) and phenol as colored and colorless model pollutants respectively were evaluated under the irradiation of blue light emitting diode (LED). The tert-butyl alcohol (TBA) as a ·OH trap and ethylene diamine tetraacetic acid (EDTA) as a hole sink were involved to investigate the main active groups that are generated on Bi{sub 2}MoO{sub 6} and function during the photodegradation of RhB and phenol. In addition, it is a competitive and promising alternative plan to use blue LED as light source for the future practical application in environmental remediation.

  4. Magnetic structure and spin excitations in BaMn2Bi2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Calder, Stuart A.; Saparov, Bayrammurad I; Cao, H. B.; Niedziela, Jennifer L.; Lumsden, Mark D.; Sefat, Athena Safa; Christianson, Andrew D.

    2014-02-19

    We present a single crystal neutron scattering study of BaMn2Bi2, a recently synthesized material with the same ThCr2Si2type structure found in several Fe-based unconventional superconducting materials. We show long range magnetic order, in the form of a G-type antiferromagnetic structure, to exist up to 390 K with an indication of a structural transition at 100 K. Utilizing inelastic neutron scattering we observe a spin-gap of 16 meV, with spin-waves extending up to 55 meV. We find these magnetic excitations are well fit to a J1-J2-Jc Heisenberg model and present values for the exchange interactions. The spin wave spectrum appears tomore » be unchanged by the 100 K structural phase transition.« less

  5. Thermal-mechanical properties of epoxy-impregnated Bi-2212/Ag composite

    SciTech Connect (OSTI)

    Li, Pei; Wang, Yang; Godeke, Arno; Ye, Liyang; Flanagan, Gene; Shen, Tengming

    2014-11-26

    In this study, knowledge of the thermal-mechanical properties of epoxy/superconductor/insulation composite is important for designing, fabricating, and operating epoxy impregnated high field superconducting magnets near their ultimate potentials. We report measurements of the modulus of elasticity, Poisson's ratio, and the coefficient of thermal contraction of epoxy-impregnated composite made from the state-of-the-art powder-in-tube multifilamentary Ag/Bi2Sr2CaCu2Ox round wire at room temperature and cryogenic temperatures. Stress-strain curves of samples made from single-strand and Rutherford cables were tested under both monotonic and cyclic compressive loads, with single strands insulated using a thin TiO2 insulation coating and the Rutherford cable insulated with a braided ceramic sleeve.

  6. Thermal-mechanical properties of epoxy-impregnated Bi-2212/Ag composite

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Pei; Wang, Yang; Fermi National Accelerator Lab.; Godeke, Arno; National High Magnetic Field Lab., Tallahassee, FL; Ye, Liyang; Fermi National Accelerator Lab.; Flanagan, Gene; Shen, Tengming

    2014-11-26

    In this study, knowledge of the thermal-mechanical properties of epoxy/superconductor/insulation composite is important for designing, fabricating, and operating epoxy impregnated high field superconducting magnets near their ultimate potentials. We report measurements of the modulus of elasticity, Poisson's ratio, and the coefficient of thermal contraction of epoxy-impregnated composite made from the state-of-the-art powder-in-tube multifilamentary Ag/Bi2Sr2CaCu2Ox round wire at room temperature and cryogenic temperatures. Stress-strain curves of samples made from single-strand and Rutherford cables were tested under both monotonic and cyclic compressive loads, with single strands insulated using a thin TiO2 insulation coating and the Rutherford cable insulated with a braided ceramicmore » sleeve.« less

  7. Growth of bi- and tri-layered graphene on silicon carbide substrate via molecular dynamics simulation

    SciTech Connect (OSTI)

    Min, Tjun Kit; Yoon, Tiem Leong; Lim, Thong Leng

    2015-04-24

    Molecular dynamics (MD) simulation with simulated annealing method is used to study the growth process of bi- and tri-layered graphene on a 6H-SiC (0001) substrate via molecular dynamics simulation. Tersoff-Albe-Erhart (TEA) potential is used to describe the inter-atomic interactions among the atoms in the system. The formation temperature, averaged carbon-carbon bond length, pair correlation function, binding energy and the distance between the graphene formed and the SiC substrate are quantified. The growth mechanism, graphitization of graphene on the SiC substrate and characteristics of the surface morphology of the graphene sheet obtained in our MD simulation compare well to that observed in epitaxially grown graphene experiments and other simulation works.

  8. Electric field control of magnetism using BiFeO{sub 3}-based heterostructures

    SciTech Connect (OSTI)

    Heron, J. T.; Schlom, D. G.; Ramesh, R.

    2014-06-15

    Conventional CMOS based logic and magnetic based data storage devices require the shuttling of electrons for data processing and storage. As these devices are scaled to increasingly smaller dimensions in the pursuit of speed and storage density, significant energy dissipation in the form of heat has become a center stage issue for the microelectronics industry. By taking advantage of the strong correlations between ferroic orders in multiferroics, specifically the coupling between ferroelectric and magnetic orders (magnetoelectricity), new device functionalities with ultra-low energy consumption can be envisioned. In this article, we review the advances and highlight challenges toward this goal with a particular focus on the room temperature magnetoelectric multiferroic, BiFeO{sub 3}, exchange coupled to a ferromagnet. We summarize our understanding of the nature of exchange coupling and the mechanisms of the voltage control of ferromagnetism observed in these heterostructures.

  9. Fracture toughness testing of bi-material joints with high strength mis-match

    SciTech Connect (OSTI)

    Kocak, M.; Hornet, P.; Cornec, A.; Schwalbe, K.H.

    1995-12-31

    This paper deals with the influence of strength mis-match on CTOD ({delta}{sub 5}) R-curves obtained from homogeneous and electron beam (EB) welded bimaterial CT and SENB specimens of two aluminum alloys. The R-curves of metal-metal bimaterial specimens are compared with the R-curves of each alloy to determine the effect of strength mismatch on the locally measured CTOD ({delta}{sub 5}) fracture toughness properties. The homogeneous specimens of two different aluminum alloys, namely 2024-FC and 2024-T351 with yield strengths of 80 and 360 MPa respectively, as well as EB welded bi-material 5 mm thick CT and SENB specimens (a/W = 0.15 and 0.5) have been tested at room temperature. The local CTOD ({delta}{sub 5}) fracture toughness measurements on such composite specimen configurations produced generally strength mis-match and geometry independent R-curves.

  10. Reduced Coercive Field in BiFeO3 Thin Films through Domain Engineering

    SciTech Connect (OSTI)

    Shelke, Vilas K; Mazumdar, Dipanjan; Srinivasan, Dr. Gopalan; Jesse, Stephen; Kalinin, Sergei V; Baddorf, Arthur P; Gupta, Dr. Arunava

    2011-01-01

    The bismuth ferrite (BiFeO3) material offers a comprehensive package of multifunctionality. In addition to the multiferroic behavior, i.e. coexistence of electric and magnetic orderings,[1] it also exhibits photovoltaic effect, [2] metal-insulator transition,[3] electric modulation of conduction,[4] and terahertz radiation emission.[5] The possibility of joint control of electric, magnetic, and optical properties provides several degrees of freedom to design exotic devices. It is a green energy material in the sense that it is lead-free and energy-efficient due to cryogen-less functionality. Therefore, a wide variety of applications in terms of sensors, memories and spintronic devices are foreseen.[6] However, the incipient lower value of magneto-electric coupling has raised skepticism regarding its multiferroic capabilities and allied applications.[6] Nevertheless, the highest value of ferroelectric polarization (~ 100 C.cm-2) is very promising for next generation ferroelectric random access memory devices.

  11. Thermal-mechanical Properties of Epoxy-impregnated Bi-2212/Ag Composite

    SciTech Connect (OSTI)

    Li, Pei [Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States); Wang, Yang [Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States); Godeke, Arno [Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Ye, Liyang [North Carolina State Univ., Raleigh, NC (United States); Flanagan, Gene [Muons Inc., Batavia, IL (United States); Shen, Tengming [Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States)

    2014-11-26

    Knowledge of the thermal-mechanical properties of epoxy/superconductor/insulation composite is important for designing, fabricating, and operating epoxy impregnated high field superconducting magnets near their ultimate potentials. We report measurements of the modulus of elasticity, Poissons ratio, and the coefficient of thermal contraction of epoxy-impregnated composite made from the state-of-the-art powder-in-tube multifilamentary Ag/Bi2Sr2CaCu2Ox round wire at room temperature and cryogenic temperatures. Stress-strain curves of samples made from single-strand and Rutherford cables were tested under both monotonic and cyclic compressive loads, with single strands insulated using a thin TiO2 insulation coating and the Rutherford cable insulated with a braided ceramic sleeve.

  12. Ligand-Mediated Modification of the Electronic Structure of CdSe Quantum Dots

    SciTech Connect (OSTI)

    Lee, Jonathan R.; Whitley, Heather D.; Meulenberg, Robert W.; Wolcott, Abraham; Zhang, Jin Z.; Prendergast, Peter; Lovingood, Derek D.; Strouse, Geoffrey F.; Ogitsu, Tadashi; Schwegler, Eric; Terminello, Louis J.; Van Buuren, Tony W.

    2012-05-18

    X-ray absorption spectroscopy and ab initio modeling of the experimental spectra have been used to investigate the effects of surface passivation on the unoccupied electronic states of CdSe quantum dots (QDs). Significant differences are observed in the unoccupied electronic structure of the CdSe QDs, which are shown to arise from variations in specific ligand-surface bonding interactions.

  13. Development of a Low Cost Insulated Foil Substrate for Cu(InGaSe)2 Photovoltaics

    SciTech Connect (OSTI)

    ERTEN ESER

    2012-01-22

    The project validated the use of stainless steel flexible substrate coated with silicone-based resin dielectric, developed by Dow Corning Corporation, for Cu(InGa)Se2 based photovoltaics. The projects driving force was the high performance of Cu(InGa)Se2 based photovoltaics coupled with potential cost reduction that could be achieved with dielectric coated SS web substrate.

  14. Surface Plasmon Excitation via Au Nanoparticles in CdSe Semiconductor

    SciTech Connect (OSTI)

    Pradhan, A. K.; Konda, R. B.; Mundle, R.; Mustafa, H.; Bamiduro, O.; Roy, U. N.; Cui, Y.; Burger, A.

    2008-10-23

    We present experimental evidence for the large Raman and photoluminescence enhancement in CdSe semiconductor films grown on Si and glass substrates due to excitation of surface plasmon resonances in proximate gold metal nanoparticles deposited on the surface of CdSe film. Heterojunction diodes containing n-CdSe on p-Si semiconductor were fabricated and the surface of the diodes was in situ coated with Au nanoparticles using the ultra-high vacuum pulsed-laser deposition technique. A significant enhancement of the photocurrent was obtained in CdSe/p-Si containing Au nanoparticles on the surface compared to CdSe/p-Si due to the enhanced photo-absorption within the semiconductor by the phenomenon of surface plasmon resonance. These observations suggest a variety of approaches for improving the performance of devices such as photodetectors, photovoltaic, and related devices, including biosensors.

  15. Experimental and theoretical studies of band gap alignment in GaAs{sub 1?x}Bi{sub x}/GaAs quantum wells

    SciTech Connect (OSTI)

    Kudrawiec, R. Kopaczek, J.; Polak, M. P.; Scharoch, P.; Gladysiewicz, M.; Misiewicz, J.; Richards, R. D.; Bastiman, F.; David, J. P. R.

    2014-12-21

    Band gap alignment in GaAs{sub 1?x}Bi{sub x}/GaAs quantum wells (QWs) was studied experimentally by photoreflectance (PR) and theoretically, ab initio, within the density functional theory in which the supercell based calculations are combined with the alchemical mixing approximation applied to a single atom in a supercell. In PR spectra, the optical transitions related to the excited states in the QW (i.e., the transition between the second heavy-hole and the second electron subband) were clearly observed in addition to the ground state QW transition and the GaAs barrier transition. This observation is clear experimental evidence that this is a type I QW with a deep quantum confinement in the conduction and valence bands. From the comparison of PR data with calculations of optical transitions in GaAs{sub 1?x}Bi{sub x}/GaAs QW performed for various band gap alignments, the best agreement between experimental data and theoretical calculations has been found for the valence band offset of 52??5%. A very similar valence band offset was obtained from ab initio calculations. These calculations show that the incorporation of Bi atoms into GaAs host modifies both the conduction and the valence band. For GaAs{sub 1?x}Bi{sub x} with 0?Bi, which only slightly decreases with Bi concentration. Whereas the valance band shift is clearly non-linear. Reducing initially at a rate of ?51?meV per % Bi for low concentrations of Bi and then at a significantly reduced rate of ?20?meV per % Bi near the end of the studied composition range. The overall reduction rate of the band gap is parabolic and the reduction rates change from ?84 to ?53?meV per % Bi for lower and higher Bi concentrations, respectively. The calculated shifts of valence and conduction bands give the variation of valence (conduction) band offset between GaAs{sub 1?x}Bi{sub x} and GaAs in the range of ?60%40% (?40%60%), which is in good agreement with our conclusion derived from PR measurements.

  16. Probing the size and environment induced phase transformation in CdSe quantum dots

    SciTech Connect (OSTI)

    Karakoti, Ajay S.; Sanghavi, Shail P.; Nachimuthu, Ponnusamy; Yang, Ping; Thevuthasan, Suntharampillai

    2011-11-17

    The structural and electronic properties of CdSe quantum dots in toluene and drop-casted on Si wafer were investigated by in-situ micro X-ray diffraction, X-ray photoelectron spectroscopy and UV-Vis absorption and emission spectroscopy. The in-situ micro diffraction data show that the CdSe quantum dots capped with TOPO or hexadecylamine (HDA) in toluene exhibit predominantly wurtzite crystal structure, which undergoes a phase transformation to zinc blende crystal structure following drop casting on Si and this phase transition increases with decreasing the size of the CdSe quantum dots. Decreasing the size of quantum dots also increases the Se vacancies that facilitate the phase transformation. The X-ray photoelectron spectra show a systematic increase in the core level binding energies of Cd 3d and Se 3d, the band gap and the Cd/Se ratio as the size of the quantum dots decreases from 6.6nm to 2.1nm. This is attributed to the quantum confinement of CdSe crystallites by the capping ligands in toluene which increases with decreasing the size of the quantum dots. However, drop-casting quantum dots on Si alter the density and arrangement of capping ligands and solvent molecules on the quantum dots which causes significant phase transformation.

  17. Giant strain with ultra-low hysteresis and high temperature stability in grain oriented lead-free K???Bi???TiO?-BaTiO?-Na???Bi???TiO? piezoelectric materials

    SciTech Connect (OSTI)

    Maurya, Deepam; Zhou, Yuan; Wang, Yaojin; Yan, Yongke; Li, Jiefang; Viehland, Dwight; Priya, Shashank

    2015-02-26

    We synthesized grain-oriented lead-free piezoelectric materials in (K???Bi???TiO?-BaTiO?-xNa???Bi???TiO? (KBT-BT-NBT) system with high degree of texturing along the [001]c (c-cubic) crystallographic orientation. We demonstrate giant field induced strain (~0.48%) with an ultra-low hysteresis along with enhanced piezoelectric response (d?? ~ 190pC/N) and high temperature stability (~160C). Transmission electron microscopy (TEM) and piezoresponse force microscopy (PFM) results demonstrate smaller size highly ordered domain structure in grain-oriented specimen relative to the conventional polycrystalline ceramics. The grain oriented specimens exhibited a high degree of non-180 domain switching, in comparison to the randomly axed ones. These results indicate the effective solution to the lead-free piezoelectric materials.

  18. Near-Unity Quantum Yields of Biexciton Emission from CdSe=CdS Nanocrystals

    Office of Scientific and Technical Information (OSTI)

    Measured Using Single-Particle Spectroscopy (Journal Article) | SciTech Connect Near-Unity Quantum Yields of Biexciton Emission from CdSe=CdS Nanocrystals Measured Using Single-Particle Spectroscopy Citation Details In-Document Search Title: Near-Unity Quantum Yields of Biexciton Emission from CdSe=CdS Nanocrystals Measured Using Single-Particle Spectroscopy Biexciton photoluminescence (PL) quantum yields (Q2X) of individual CdSe/CdS core-shell nanocrystal quantum dots with various shell

  19. Optimal packing size of non-ligated CdSe nanoclusters for microstructure synthesis

    SciTech Connect (OSTI)

    Tefera, Anteneh G.; Mochena, Mogus D.; Johnson, Elijah; Dickerson, James

    2014-09-14

    Structural and electrostatic properties of nanoclusters of CdSe of diameter 1–2 nm are studied with first principle calculations to determine the optimal size for synthesizing microstructures. Based on robustness of the core structure, i.e., the retention of tetrahedral geometry, hexagonal ring structure, and overall wu{sup ¨}rtzite structure to surface relaxations, we conclude that nanoclusters of ~2 nm diameter are the best candidates to form a dense microstructure with minimal interstitial space. Se-terminated surfaces retain a zigzag structure as Se atoms are pulled out and Cd atoms are pulled in due to relaxation, therefore, are best suited for inter-nanocluster formations.

  20. An oleic acid-capped CdSe quantum-dot sensitized solar cell

    SciTech Connect (OSTI)

    Chen Jing; Song, J. L.; Deng, W. Q.; Sun, X. W.; Jiang, C. Y.; Lei, W.; Huang, J. H.; Liu, R. S.

    2009-04-13

    In this letter, we report an oleic acid (OA)-capped CdSe quantum-dot sensitized solar cell (QDSSC) with an improved performance. The TiO{sub 2}/OA-CdSe photoanode in a two-electrode device exhibited a photon-to-current conversion efficiency of 17.5% at 400 nm. At AM1.5G irradiation with 100 mW/cm{sup 2} light intensity, the QDSSCs based on OA-capped CdSe showed a power conversion efficiency of about 1%. The function of OA was to increase QD loading, extend the absorption range and possibly suppress the surface recombination.

  1. Thickness-dependent coherent phonon frequency in ultrathin FeSe/SrTiO3

    Office of Scientific and Technical Information (OSTI)

    films (Journal Article) | SciTech Connect Thickness-dependent coherent phonon frequency in ultrathin FeSe/SrTiO3 films Citation Details In-Document Search Title: Thickness-dependent coherent phonon frequency in ultrathin FeSe/SrTiO3 films Ultrathin FeSe films grown on SrTiO3 substrates are a recent milestone in atomic material engineering due to their important role in understanding unconventional superconductivity in Fe-based materials. By using femtosecond time- and angle-resolved

  2. Electrosprayed heterojunction WO{sub 3}/BiVO{sub 4} films with nanotextured pillar structure for enhanced photoelectrochemical water splitting

    SciTech Connect (OSTI)

    Mali, Mukund G.; Yoon, Hyun; Yoon, Sam S.; Kim, Min-woo; Swihart, Mark T.; Al-Deyab, Salem S.

    2015-04-13

    We demonstrate that the addition of a tungsten oxide (WO{sub 3}) layer beneath a bismuth vanadate (BiVO{sub 4}) photocatalyst layer with a nanotextured pillar morphology significantly increases the photocurrent density in photoelectrochemical water splitting. The WO{sub 3}-BiVO{sub 4} bilayer films produced a photocurrent of up to 3.3?mA/cm{sup 2} under illumination at 100 mW/cm{sup 2} (AM1.5 spectrum). The bilayer film was characterized by scanning electron microscopy, X-ray diffraction, and photoelectrochemical methods, which confirmed the superiority of the bilayer film in terms of its morphology and charge separation and transport ability. Both WO{sub 3} and BiVO{sub 4} were deposited by electrostatic spraying under open-air conditions, which resulted in nanotextured pillars of BiVO{sub 4} atop a smooth WO{sub 3} film. The optimal coating conditions are also reported.

  3. Low-temperature ferromagnetic properties in Co-doped Ag{sub 2}Se nanoparticles

    SciTech Connect (OSTI)

    Yang, Fengxia E-mail: xia9020@hust.edu.cn; Yu, Gen; Han, Chong; Liu, Tingting; Zhang, Duanming; Xia, Zhengcai E-mail: xia9020@hust.edu.cn

    2014-01-06

    β-Ag{sub 2}Se is a topologically nontrivial insulator. The magnetic properties of Co-doped Ag{sub 2}Se nanoparticles with Co concentrations up to 40% were investigated. The cusp of zero-field-cooling magnetization curves and the low-temperature hysteresis loops were observed. With increasing concentration of Co{sup 2+} ions mainly substituting Ag{sub I} sites in the Ag{sub 2}Se structure, the resistivity, Curie temperature T{sub c}, and magnetization increased. At 10 T, a sharp drop of resistance near T{sub c} was detected due to Co dopants. The ferromagnetic behavior in Co-doped Ag{sub 2}Se might result from the intra-layer ferromagnetic coupling and surface spin. This magnetic semiconductor is a promising candidate in electronics and spintronics.

  4. Thermoelectric properties of polycrystalline In4Se3 and In4Te3

    SciTech Connect (OSTI)

    Shi, Xun; Cho, Jung Y; Salvador, James R.; Yang, Jihui; Wang, Hsin

    2010-01-01

    High thermoelectric performance of a single crystal layered compound In{sub 4}Se{sub 3} was reported recently. We present here an electrical and thermal transport property study over a wide temperature range for polycrystalline samples of In{sub 4}Se{sub 3} and In{sub 4}Te{sub 3}. Our data demonstrate that these materials are lightly doped semiconductors, leading to large thermopower and resistivity. Very low thermal conductivity, below 1 W/m K, is observed. The power factors for In{sub 4}Se{sub 3} and In{sub 4}Te{sub 3} are much smaller when compared with state-of-the-art thermoelectric materials. This combined with the very low thermal conductivity results in the maximum ZT value of less than 0.6 at 700 K for In{sub 4}Se{sub 3}.

  5. Enhanced spontaneous emission of CdSe quantum dots in monolithic II-VI pillar microcavities

    SciTech Connect (OSTI)

    Lohmeyer, H.; Kruse, C.; Sebald, K.; Gutowski, J.; Hommel, D.

    2006-08-28

    The emission properties of CdSe/ZnSe quantum dots in ZnSe-based pillar microcavities are studied. All-epitaxial cavities made of ZnSSe and MgS/ZnCdSe superlattices with a single quantum-dot sheet embedded have been grown by molecular beam epitaxy. Pillar structures with diameters down to 500 nm have been realized by focused-ion-beam etching. A pronounced enhancement of the spontaneous emission rate of quantum dots coupling to the fundamental mode of the cavities is found as evidence for the Purcell effect. The enhancement by a factor of up to 3.8 depends systematically on the pillar diameter and thus on the Purcell factor of the individual pillars.

  6. Phonon properties of BaFe?X? (X=S, Se) spin ladder compounds

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Popovicq, Z. V.; Petrovic, C.; Scepanovic, M.; Lazarevic, N.; Opacic, M.; Radonjic, M. M.; Tanaskovic, D.; Lei, Hechang

    2015-02-27

    We present the Raman scattering spectra of the S=2 spin ladder compounds BaFe?X? (X=S,Se) in a temperature range between 20 and 400 K. Although the crystal structures of these two compounds are both orthorhombic and very similar, they are not isostructural. The unit cell of BaFe?S? (BaFe?Se?) is base-centered Cmcm (primitive Pnma), giving 18 (36) modes to be observed in the Raman scattering experiment. We have detected almost all Raman active modes, predicted by factor group analysis, which can be observed from the cleavage planes of these compounds. Assignment of the observed Raman modes of BaFe?S(Se)? is supported by themorelattice dynamics calculations. The antiferromagnetic long-range spin ordering in BaFe?Se? below TN=255K leaves a fingerprint both in the A1g and B3g phonon mode linewidth and energy.less

  7. Super-Poissonian Statistics of Photon Emission from Single CdSe...

    Office of Scientific and Technical Information (OSTI)

    Statistics of Photon Emission from Single CdSe-CdS Core-Shell Nanocrystals Coupled to Metal Nanostructures Citation Details In-Document Search Title: Super-Poissonian Statistics of ...

  8. Flow of US/SE Program Funding to National Laboratories (FY 2014 Enacted)

    Broader source: Energy.gov [DOE]

    This figure illustrates the flow of funding to each of 17 DOE National Laboratories from five of the six US/SE program offices. IE does not directly fund program work at the National Laboratories.

  9. A complete strain temperature phase diagram for BiFeO3 films on SrTiO3 and

    Office of Scientific and Technical Information (OSTI)

    LaAlO3 (0 0 1) (Journal Article) | SciTech Connect A complete strain temperature phase diagram for BiFeO3 films on SrTiO3 and LaAlO3 (0 0 1) Citation Details In-Document Search Title: A complete strain temperature phase diagram for BiFeO3 films on SrTiO3 and LaAlO3 (0 0 1) Authors: Siemons, Wolter [1] ; Beekman, Christianne [1] ; MacDougall, Gregory J [1] ; Zarestky, Jerel L [1] ; Nagler, Stephen E [1] ; Christen, Hans M [1] + Show Author Affiliations ORNL [ORNL Publication Date: 2014-01-01

  10. Electron density and electron temperature measurement in a bi-Maxwellian electron distribution using a derivative method of Langmuir probes

    SciTech Connect (OSTI)

    Choi, Ikjin; Chung, ChinWook [Department of Electrical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of)] [Department of Electrical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Youn Moon, Se [High-Enthalpy Plasma Research Center, Chonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju, Jeollabuk-do 561-756 (Korea, Republic of)] [High-Enthalpy Plasma Research Center, Chonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju, Jeollabuk-do 561-756 (Korea, Republic of)

    2013-08-15

    In plasma diagnostics with a single Langmuir probe, the electron temperature T{sub e} is usually obtained from the slope of the logarithm of the electron current or from the electron energy probability functions of current (I)-voltage (V) curve. Recently, Chen [F. F. Chen, Phys. Plasmas 8, 3029 (2001)] suggested a derivative analysis method to obtain T{sub e} by the ratio between the probe current and the derivative of the probe current at a plasma potential where the ion current becomes zero. Based on this method, electron temperatures and electron densities were measured and compared with those from the electron energy distribution function (EEDF) measurement in Maxwellian and bi-Maxwellian electron distribution conditions. In a bi-Maxwellian electron distribution, we found the electron temperature T{sub e} obtained from the method is always lower than the effective temperatures T{sub eff} derived from EEDFs. The theoretical analysis for this is presented.

  11. Mssbauer investigations of hyperfine interactions features of {sup 57}Fe nuclei in BiFeO{sub 3} ferrite

    SciTech Connect (OSTI)

    Sobolev, Alexey, E-mail: salex12@rambler.ru; Presniakov, Igor, E-mail: salex12@rambler.ru; Rusakov, Vyacheslav, E-mail: salex12@rambler.ru; Matsnev, Mikhail; Gorchakov, Dmitry; Glazkova, Iana [Lomonosov Moscow State University, 119991, Moscow (Russian Federation); Belik, Alexey [International Center for Materials Nanoarchitectonics (MANA), National Institute for Material Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044 (Japan)

    2014-10-27

    New results of {sup 57}Fe Mssbauer studies on BiFeO{sub 3} powder sample performed at various temperatures above and below magnetic phase transitions point T{sub N} ? 640K are reported. We have performed self-consistent calculations of the lattice contributions to the EFG tensor, taking into account dipole moments of the O{sup 2?} and Bi{sup 3+} ions. Low-temperature {sup 57}Fe Mssbauer spectra recorded at T < T{sub N} were analyzed assuming an anharmonic cycloidal modulation of the Fe{sup 3+} magnetic moments. The cycloidal modulation of the iron spin was described with the elliptic Jacobi function sn[(4K(m)/?)x,m]. The good fit of the experimental spectra was obtained for the anharmonicity m = 0.44 0.04 (T = 4.9K) resulting from the easy-axis magnetic anisotropy.

  12. AeroSys: Noncompliance Determination (2010-SE-0302) | Department of Energy

    Energy Savers [EERE]

    Noncompliance Determination (2010-SE-0302) AeroSys: Noncompliance Determination (2010-SE-0302) April 13, 2010 DOE issued a Notice of Noncompliance Determination to AeroSys, Inc. finding that basic model THDC-24SG does not comport with the energy conservation standards. DOE determined the product was noncompliant based on DOE testing. AeroSys must immediately notify each person (or company) to whom AeroSys distributed the noncompliant product that the product does not meet Federal standards. In

  13. Unique Challenges Accompany Thick-Shell CdSe/nCdS (n > 10) Nanocrystal Synthesis

    SciTech Connect (OSTI)

    Guo, Y; Marchuk, K; Abraham, R; Sampat, S; Abraham, R.; Fang, N; Malko, AV; Vela, J

    2011-12-23

    Thick-shell CdSe/nCdS (n {ge} 10) nanocrystals were recently reported that show remarkably suppressed fluorescence intermittency or 'blinking' at the single-particle level as well as slow rates of Auger decay. Unfortunately, whereas CdSe/nCdS nanocrystal synthesis is well-developed up to n {le} 6 CdS monolayers (MLs), reproducible syntheses for n {ge} 10 MLs are less understood. Known procedures sometimes result in homogeneous CdS nucleation instead of heterogeneous, epitaxial CdS nucleation on CdSe, leading to broad and multimodal particle size distributions. Critically, obtained core/shell sizes are often below those desired. This article describes synthetic conditions specific to thick-shell growth (n {ge} 10 and n {ge} 20 MLs) on both small (sub2 nm) and large (>4.5 nm) CdSe cores. We find added secondary amine and low concentration of CdSe cores and molecular precursors give desired core/shell sizes. Amine-induced, partial etching of CdSe cores results in apparent shell-thicknesses slightly beyond those desired, especially for very-thick shells (n {ge} 20 MLs). Thermal ripening and fast precursor injection lead to undesired homogeneous CdS nucleation and incomplete shell growth. Core/shells derived from small CdSe (1.9 nm) have longer PL lifetimes and more pronounced blinking at single-particle level compared with those derived from large CdSe (4.7 nm). We expect our new synthetic approach will lead to a larger throughput of these materials, increasing their availability for fundamental studies and applications.

  14. Synthesis of CdSe quantum dots for quantum dot sensitized solar cell

    SciTech Connect (OSTI)

    Singh, Neetu Kapoor, Avinashi; Kumar, Vinod; Mehra, R. M.

    2014-04-24

    CdSe Quantum Dots (QDs) of size 0.85 nm were synthesized using chemical route. ZnO based Quantum Dot Sensitized Solar Cell (QDSSC) was fabricated using CdSe QDs as sensitizer. The Pre-synthesized QDs were found to be successfully adsorbed on front ZnO electrode and had potential to replace organic dyes in Dye Sensitized Solar Cells (DSSCs). The efficiency of QDSSC was obtained to be 2.06 % at AM 1.5.

  15. Supercharging a Superconductor: Understanding the Tc enhancement of FeSe |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stanford Synchrotron Radiation Lightsource Supercharging a Superconductor: Understanding the Tc enhancement of FeSe Wednesday, April 13, 2016 - 3:00pm SLAC, Redtail Hawk Conference Room 108A Speaker: Rob Moore, SIMES Program Description The recent synthesis of interfaces and heterostructures with atomic precision has revealed numerous new and unexpected phenomena. The order of magnitude enhancement of the superconducting properties of FeSe in the ultrathin 2D limit is an example of such a

  16. Super-Poissonian Statistics of Photon Emission from Single CdSe-CdS

    Office of Scientific and Technical Information (OSTI)

    Core-Shell Nanocrystals Coupled to Metal Nanostructures (Journal Article) | SciTech Connect Super-Poissonian Statistics of Photon Emission from Single CdSe-CdS Core-Shell Nanocrystals Coupled to Metal Nanostructures Citation Details In-Document Search Title: Super-Poissonian Statistics of Photon Emission from Single CdSe-CdS Core-Shell Nanocrystals Coupled to Metal Nanostructures Authors: Park, Young-Shin ; Ghosh, Yagnaseni ; Chen, Yongfen ; Piryatinski, Andrei ; Xu, Ping ; Mack, Nathan H. ;

  17. Quantum oscillations in magnetothermopower measurements of topological insulator Bi2Te3

    SciTech Connect (OSTI)

    Qu, Dong -Xia; Hor, Y. S.; Cava, R. J.

    2012-12-10

    We report the magnetothermopower measurements of the nonmetallic topological insulator Bi2Te3 in magnetic fields up to 35 T. Quantum oscillations arising from surface states are observed in both thermoelectric and conductivity tensors. The inferred surface thermopower has a peak magnitude ~1 mV/K possibly as a result of surface electron and bulk phonon interaction. At the n = 1 Landau level, we resolve additional quantum oscillations signaling Landau sublevels.

  18. Ultrafast terahertz gating of the polarization and giant nonlinear optical response in BiFeO3 thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chen, Frank; Goodfellow, John; Liu, Shi; Grinberg, Ilya; Hoffmann, Matthias; Damodaran, Anoop R.; Zhu, Yi; Zalden, Peter; Zhang, Xiaohang; Takeuchi, Ichiro; et al

    2015-09-21

    Terahertz pulses are applied as an all-optical bias to ferroelectric thin-film BiFeO3 while monitoring the time-dependent ferroelectric polarization through its nonlinear optical response. Modulations in the intensity of the second harmonic light generated by the film correspond to on–off ratios of 220× gateable on femtosecond timescales. Lastly, polarization modulations comparable to the built-in static polarization are observed.

  19. Doping SrTiO3 supported FeSe by excess atoms and oxygen vacancies

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shanavas, Kavungal Veedu; Singh, David J.

    2015-07-24

    Photoemission studies of FeSe monolayer films on SrTiO3 substrate have shown electronic structures that deviate from pristine FeSe, consistent with heavy electron doping. With the help of first-principles calculations we studied the effect of excess Fe and Se atoms on the monolayer and oxygen vacancies in the substrate in order to understand the reported Fermi surface in this system. We find that both excess Fe and Se atoms prefer the same adsorption site above the bottom Se atoms on the monolayer. The adsorbed Fe is strongly magnetic and contributes electrons to the monolayer, while excess Se hybridizes with the monolayermore » Fe-d states and partially opens a gap just above the Fermi energy. We also find that the two-dimensional electron gas generated by the oxygen vacancies is partly transferred to the monolayer and can potentially suppress the hole pockets around the Γ point. Furthermore, both O vacancies in the SrTiO3 substrate and excess Fe over the monolayer can provide high levels of electron doping.« less

  20. CdSe/ZnSe quantum dot with a single Mn{sup 2+} ionA new system for a single spin manipulation

    SciTech Connect (OSTI)

    Smole?ski, T.

    2015-03-21

    We present a magneto-optical study of individual self-assembled CdSe/ZnSe quantum dots doped with single Mn{sup 2+} ions. Properties of the studied dots are analyzed analogously to more explored system of Mn-doped CdTe/ZnTe dots. Characteristic sixfold splitting of the neutral exciton emission line as well as its evolution in the magnetic field are described using a spin Hamiltonian model. Dynamics of both exciton recombination and Mn{sup 2+} spin relaxation are extracted from a series of time-resolved experiments. Presence of a single dopant is shown not to affect the average excitonic lifetime measured for a number of nonmagnetic and Mn-doped dots. On the other hand, non-resonant pumping is demonstrated to depolarize the Mn{sup 2+} spin in a quantum dot placed in external magnetic field. This effect is utilized to determine the ion spin relaxation time in the dark.

  1. Hidden Superlattice in Tl2(SC6H4S) and Tl2(SeC6H4Se) Solved from Powder X-ray Diffraction

    SciTech Connect (OSTI)

    K Stone; D Turner; M Singh; T Vaid; P Stephens

    2011-12-31

    The crystal structures of the isostructural title compounds poly[({mu}-benzene-1,4-dithiolato)dithallium], Tl{sub 2}(SC{sub 6}H{sub 4}S), and poly[({mu}-benzene-1,4-diselenolato)dithallium], Tl{sub 2}(SeC{sub 6}H{sub 4}Se), were solved by simulated annealing from high-resolution synchrotron X-ray powder diffraction. Rietveld refinements of an initial structure with one formula unit per triclinic cell gave satisfactory agreement with the data, but led to a structure with impossibly close non-bonded contacts. A disordered model was proposed to alleviate this problem, but an alternative supercell structure leads to slightly improved agreement with the data. The isostructural superlattice structures were confirmed for both compounds through additional data collection, with substantially better counting statistics, which revealed the presence of very weak superlattice peaks not previously seen. Overall, each structure contains Tl-S or Tl-Se two-dimensional networks, connected by phenylene bridges. The sulfur (or selenium) coordination sphere around each thallium is a highly distorted square pyramid or a 'see-saw' shape, depending upon how many Tl-S or Tl-Se interactions are considered to be bonds. In addition, the two compounds contain pairs of Tl{sup I} ions that interact through a closed-shell 'thallophilic' interaction: in the sulfur compound there are two inequivalent pairs of Tl atoms with Tl-Tl distances of 3.49 and 3.58 {angstrom}, while in the selenium compound those Tl-Tl interactions are at 3.54 and 3.63 {angstrom}.

  2. Non-H{sub 2}Se, ultra-thin CuInSe{sub 2} devices. Annual subcontract report, November 10, 1992--November 9, 1993

    SciTech Connect (OSTI)

    Delahoy, A.E.; Britt, J.; Faras, F.; Kiss, Z.

    1994-09-01

    This report describes advances made during Phase II (November 10, 1992-November 9, 1993) of a three-phase, cost-shared subcontract whose ultimate goal is the demonstration of thin film CuInSe{sub 2} photovoltaic modules prepared by methods adaptable to safe, high yield, high volume manufacturing. At the end of Phase I, EPV became one of the first groups to clear the 10% efficiency barrier for CIS cells prepared by non-H{sub 2}Se selenization. During Phase II a total area efficiency of 12.5% was achieved for a 1 cm{sup 2} cell. The key achievement of Phase II was the production of square foot CIS modules without the use of H{sub 2}Se. This is seen as a crucial step towards the commercialization of CIS. Using a novel interconnect technology, EPV delivered an 8.0% aperture area efficiency mini-module and a 6.2% aperture area efficiency 720 cm{sub 2} module to NREL. On the processing side, advances were made in precursor formation and the selenization profile, both of which contributed to higher quality CIS. The higher band gap quaternary chalcopyrite material CuIn(S{sub x}, Se{sub 1{minus}X}){sub 2} was prepared and 8% cells were fabricated using this material. Device analysis revealed a correlation between long wavelength quantum efficiency and the CIS Cu/In ratio. Temperature dependent studies highlighted the need for high V{sub OC} devices to minimize the impact of the voltage drop at operating temperature. Numerical modeling of module performance was performed in order to identify the correct ZnO sheet resistance for modules. Efforts in Phase III will focus on increase of module efficiency to 9-10%, initiation of an outdoor testing program, preparation of completely uniform CIS plates using second generation selenization equipment, and exploration of alternative precursors for CIS formation.

  3. Spin-Induced Polarizations and Nonreciprocal Directional Dichroism of the Room-Temperature Multiferroic BiFeO3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Fishman, Randy Scott; Lee, Jun Hee; Bordacs, Sandor; Kezsmarki, Istvan; Nagel, Urmas; Room, Toomas

    2015-09-14

    A microscopic model for the room-temperature multiferroic BiFeO3 that includes two Dzyaloshinskii-Moriya interactions and single-ion anisotropy along the ferroelectric polarization predicts both the zero-field spectroscopic modes as well as their splitting and evolution in a magnetic field. Due to simultaneously broken time-reversal and spatial-inversion symmetries, the absorption of light changes as the magnetic field or the direction of light propagation is reversed. We discuss three physical mechanisms that may contribute to this absorption asymmetry known as directional dichroism: the spin current, magnetostriction, and single-ion anisotropy. We conclude that the directional dichroism in BiFeO3 is dominated by the spin-current polarization andmore » is insensitive to the magnetostriction and easy-axis anisotropy. With three independent spin-current parameters, our model accurately describes the directional dichroism observed for magnetic field along [1, -1, 0]. Since some modes are almost transparent to light traveling in one direction but opaque for light traveling in the opposite direction, BiFeO3 can be used as a room-temperature optical diode at certain frequencies in the GHz to THz range. This work demonstrates that an analysis of the directional dichroism spectra based on an effective spin model supplemented by first-principles calculations can produce a quantitative microscopic theory of the magnetoelectric couplings in multiferroic materials.« less

  4. Using galvanostatic electroforming of Bi1–xSbx nanowires to control composition, crystallinity, and orientation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limmer, Steven J.; Medlin, Douglas L.; Siegal, Michael P.; Hekmaty, Michelle; Lensch-Falk, Jessica L.; Erickson, Kristopher; Pillars, Jamin; Yelton, W. Graham

    2014-12-03

    When using galvanostatic pulse deposition, we studied the factors influencing the quality of electroformed Bi1–xSbx nanowires with respect to composition, crystallinity, and preferred orientation for high thermoelectric performance. Two nonaqueous baths with different Sb salts were investigated. The Sb salts used played a major role in both crystalline quality and preferred orientations. Nanowire arrays electroformed using an SbI3 -based chemistry were polycrystalline with no preferred orientation, whereas arrays electroformed from an SbCl3-based chemistry were strongly crystallographically textured with the desired trigonal orientation for optimal thermoelectric performance. From the SbCl3 bath, the electroformed nanowire arrays were optimized to have nanocompositionalmore » uniformity, with a nearly constant composition along the nanowire length. Moreover, nanowires harvested from the center of the array had an average composition of Bi0.75 Sb0.25. However, the nanowire compositions were slightly enriched in Sb in a small region near the edges of the array, with the composition approaching Bi0.70Sb0.30.« less

  5. Magnetic field and field orientation dependence of the critical current density in Bi-2212 round wires and other HTS conductors

    SciTech Connect (OSTI)

    Willis, J.O.; Holesinger, T.G.; Coulter, J.Y.; Maley, M.P.

    1996-10-01

    The authors have performed measurements of the magnetic field dependence of the critical current density J{sub c} of Bi-2212/Ag round wire produced by isothermal melt processing. In contrast to the case for flat tape, there is very little dependence of J{sub c} on the direction of the magnetic field as it is rotated normal to the wire axis, which is the direction of the nominal current flow. However, when the angle of the magnetic field direction is rotated from normal to the wire axis to parallel to that axis, J{sub c} at 64 K and 0.2 T increases by more than a factor of four. Again, this is in contrast to the results observed for Bi-2212/Ag and Bi-2223/Ag flat tapes, which show no anisotropy under similar experimental conditions. They can explain these differences in angular anisotropy by referring to the microstructure of these two conductor types, which have distinctly different types of grain alignment. They discuss the general behavior of the dependence of J{sub c} on the orientation of a magnetic field for high temperature superconductors.

  6. The abnormal electrical and optical properties in Na and Ni codoped BiFeO{sub 3} nanoparticles

    SciTech Connect (OSTI)

    Xu, Xunling; Liu, Weifang E-mail: shouyu.wang@yahoo.com; Zhang, Hong; Guo, Minchen; Wu, Ping; Wang, Shouyu E-mail: shouyu.wang@yahoo.com; Gao, Ju; Rao, Guanghui

    2015-05-07

    Bi{sub 0.97}Na{sub 0.03}Fe{sub 1−x}Ni{sub x}O{sub 3} (x = 0, 0.005, 0.01, 0.015) nanoparticles are prepared via a sol-gel method. Weak ferromagnetism and exchange bias phenomenon without field cooling are observed in the samples. The oxygen vacancy concentration and leakage current density are increased with increasing the Ni content. However, with the increase of Ni content, the band gap of Bi{sub 0.97}Na{sub 0.03}Fe{sub 1−x}Ni{sub x}O{sub 3} nanoparticles first decreases and then increases. To explain the abnormal phenomenon, the interplay of oxygen vacancy donor and hole acceptor is analyzed and a phenomenological qualitative model based on the electronic energy band is proposed. Additionally, the threshold switching behavior appears in Bi{sub 0.97}Na{sub 0.03}Fe{sub 1−x}Ni{sub x}O{sub 3} samples with x = 0.01, 0.015 and the effect is qualitatively explained by introducing a conducting channel model based on the high-density mobile charges.

  7. Manufacturing of High-Efficiency Bi-Facial Tandem Concentrator Solar Cells: February 20, 2009--August 20, 2010

    SciTech Connect (OSTI)

    Wojtczuk , S.

    2011-06-01

    Spire Semiconductor made concentrator photovoltaic (CPV) cells using a new bi-facial growth process and met both main program goals: a) 42.5% efficiency 500X (AM1.5D, 25C, 100mW/cm2); and b) Ready to supply at least 3MW/year of such cells at end of program. We explored a unique simple fabrication process to make a N/P 3-junction InGaP/GaAs/InGaAs tandem cells . First, the InGaAs bottom cell is grown on the back of a GaAs wafer. The wafers are then loaded into a cassette, spin-rinsed to remove particles, dipped in dilute NH4OH and spin-dried. The wafers are then removed from the cassette loaded the reactor for GaAs middle and InGaP top cell growth on the opposite wafer face (bi-facial growth). By making the epitaxial growth process a bit more complex, we are able to avoid more complex processing (such as large area wafer bonding or epitaxial liftoff) used in the inverted metamorphic (IMM) approach to make similar tandem stacks. We believe the yield is improved compared to an IMM process. After bi-facial epigrowth, standard III-V cell steps (back metal, photolithography for front grid, cap etch, AR coat, dice) are used in the remainder of the process.

  8. Performance of Anode-Supported Solid Oxide Fuel Cell with Thin Bi-Layer Electrolyte by Pulsed Laser Deposition

    SciTech Connect (OSTI)

    Lu, Zigui; Hardy, John S.; Templeton, Jared W.; Stevenson, Jeffry W.; Fisher, Daniel; Wu, Naijuan; Ignatiev, Alex

    2012-07-15

    Anode-supported yttria stabilized zirconia (YSZ)/samaria doped ceria (SDC) bi-layer electrolytes with uniform thickness and high density were fabricated by pulsed laser deposition at 1000 degrees C. Fuel cells with such bi-layer electrolytes were fabricated and tested, yielding open circuit voltages from 0.94 to 1.0 V at 600-700 degrees C. Power densities from 0.4 to 1.0 W cm{sup -2} at 0.7 V were achieved in air at temperatures of 600-700 degrees C. Cell performance was improved in flowing oxygen, with an estimated peak power density of over 2 W cm{sup -2} at 650 degrees C, assuming the same overall resistance over the entire range of current density. The high cell performance was attributed to the very low ohmic resistance of the fuel cell, owing to the small thickness of the electrolyte. Stable performance was also demonstrated in that the voltage of the fuel cell showed very little change at a constant current density of 1 A cm{sup -2} during more than 400 hours of operation at 650 degrees C in flowing oxygen. SEM analysis of the fuel cell after testing showed that the bi-layer electrolyte had retained its chemical and mechanical integrity.

  9. Conduction and magnetization improvement of BiFeO{sub 3} multiferroic nanoparticles by Ag{sup +} doping

    SciTech Connect (OSTI)

    Ahmed, M.A.; Mansour, S.F.; El-Dek, S.I.; Abu-Abdeen, M.

    2014-01-01

    Graphical abstract: HRTEM micrographs of the samples BiFeO{sub 3}. - Highlights: Flash auto combustion method was successful in the preparation of Ag doped BiFeO{sub 3} in nanosize. Ag doping results in hexagonal platelet shapes up to x = 0.10, at x ? 0.15 needle shape predominates. Mixed conduction is obtained in Ag doped samples. This nanometric multiferroic could be recommended as attractive cathode for solid oxide fuel cell. - Abstract: Nanometric multiferroic namely Ag doped (BiFeO{sub 3}) was synthesized using flash auto combustion technique and glycine as a fuel. Single phase rhombohedralhexagonal perovskite structure was obtained by annealing at 550 C, as determined from XRD. High resolution transmission electron microscope (HRTEM) clarifies the hexagonal platelet shape with size 17.9 nm. Maximum room temperature AC conductivity was obtained at Ag content of x = 0.10. The results of this study promote the use of such multiferroic in solid oxide fuel cell applications.

  10. Persistent photoconductivity in two-dimensional Mo1-xW xSe2–MoSe2 van der Waals heterojunctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Puretzky, Alexander A.; Basile, Leonardo; Idrobo, Juan Carlos; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai; Li, Xufan; Lin, Ming -Wei; Wang, Kei

    2016-02-16

    Van der Waals (vdW) heterojunctions consisting of vertically-stacked individual or multiple layers of two-dimensional (2D) layered semiconductors, especially the transition metal dichalcogenides (TMDs), are fascinating new artificial solids just nanometers-thin that promise novel optoelectronic functionalities due to the sensitivity of their electronic and optical properties to strong quantum confinement and interfacial interactions. Here, monolayers of n-type MoSe2 and p-type Mo1-xW xSe2–MoSe2 are grown by vapor transport methods, then transferred and stamped to form artificial vdW heterostructures with different interlayer orientations. Atomic-resolution Z-contrast electron microscopy and electron diffraction are used to characterize both the individual monolayers and the atomic registry betweenmore » layers in the bilayer vdW heterostructures. These measurements are compared with photoluminescence and low-frequency Raman spectroscopy, which indicates strong interlayer coupling in heterostructures. Remarkably, the heterojunctions exhibit an unprecedented photoconductivity effect that persists at room temperature for several days. This persistent photoconductivity is shown to be tunable by applying a gate bias that equilibrates the charge distribution. Furthermore, these measurements indicate that such ultrathin vdW heterojunctions can function as rewritable optoelectronic switches or memory elements under time-dependent photo-illumination, an effect which appears promising for new monolayer TMDs-based optoelectronic devices applications.« less

  11. Piezoelectricity and local structural distortions in (Na{sub 0.5}Bi{sub 0.5}){sub 1-x}Sr{sub x}TiO{sub 3}-Bi{sub 12}TiO{sub 20} flexoelectric-type polar ceramics

    SciTech Connect (OSTI)

    Wang, L. H.; Zhao, M. L.; Wang, C. L.; Wang, J.; Kuai, W. J.; Tao, X. T.

    2012-08-06

    We have previously described sintered Na{sub 0.5}Bi{sub 0.5}TiO{sub 3}-Bi{sub 12}TiO{sub 20} composites as flexoelectric-type polar ceramics because they have a net macroscopic flexoelectric polarization. Here, we report on the universal existence of the macroscopic flexoelectric polarization in the (Na{sub 0.5}Bi{sub 0.5}){sub 1-x}Sr{sub x}TiO{sub 3}-Bi{sub 12}TiO{sub 20} system, in which enhanced piezoelectricity is observed. By combining Raman spectroscopy and x-ray photoelectron spectroscopy techniques, we have identified the local flexoelectric polarization as distorted BiO{sub 5} polyhedra and TiO{sub 6} octahedra in the SrTiO{sub 3}-Bi{sub 12}TiO{sub 20} ceramic. The macroscopic polarization may be due to the partial alignment of these distorted units located within the grain boundary amorphous phases. Bi{sub 12}TiO{sub 20} could have an important role in these flexoelectric-type polar ceramics.

  12. Particle-Hole Symmetry Breaking in the Pseudogap State of Bi2201

    SciTech Connect (OSTI)

    Hashimoto, M.; He, R.-H.; Tanaka, K.; Testaud, J.P.; Meevasana1, W.; Moore, R.G.; Lu, D.H.; Yao, H.; Yoshida, Y.; Eisaki, H.; Devereaux, T.P.; Hussain, Z.; Shen, Z.-X.; /SIMES, Stanford /Stanford U., Geballe Lab.

    2011-08-19

    In conventional superconductors, a gap exists in the energy absorption spectrum only below the transition temperature (T{sub c}), corresponding to the energy price to pay for breaking a Cooper pair of electrons. In high-T{sub c} cuprate superconductors above T{sub c}, an energy gap called the pseudogap exists, and is controversially attributed either to pre-formed superconducting pairs, which would exhibit particle-hole symmetry, or to competing phases which would typically break it. Scanning tunnelling microscopy (STM) studies suggest that the pseudogap stems from lattice translational symmetry breaking and is associated with a different characteristic spectrum for adding or removing electrons (particle-hole asymmetry). However, no signature of either spatial or energy symmetry breaking of the pseudogap has previously been observed by angle-resolved photoemission spectroscopy (ARPES). Here we report ARPES data from Bi2201 which reveals both particle-hole symmetry breaking and dramatic spectral broadening indicative of spatial symmetry breaking without long range order, upon crossing through T* into the pseudogap state. This symmetry breaking is found in the dominant region of the momentum space for the pseudogap, around the so-called anti-node near the Brillouin zone boundary. Our finding supports the STM conclusion that the pseudogap state is a broken-symmetry state that is distinct from homogeneous superconductivity.

  13. Capturing ultrafast photoinduced local structural distortions of BiFeO3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wen, Haidan; Sassi, Michel JPC; Luo, Zhenlin; Adamo, Carolina; Schlom, Darrell; Rosso, Kevin M.; Zhang, Xiaoyi

    2015-10-14

    The interaction of light with materials is an intensively studied research forefront, in which the coupling of radiation energy to selective degrees of freedom offers contact-free tuning of functionalities on ultrafast time scales. Capturing the fundamental processes and understanding the mechanism of photoinduced structural rearrangement are essential to applications such as photo-active actuators and efficient photovoltaic devices. Using ultrafast x-ray absorption spectroscopy aided by density functional theory calculations, we reveal the local structural arrangement around the transition metal atom in a unit cell of the photoferroelectric archetype BiFeO3 film. The out-of-plane elongation of the unit cell is accompanied by themore » in-plane shrinkage with minimal change of interaxial lattice angles upon photoexcitation. This uniaxial elastic deformation of the unit cell is driven by localized electric field as a result of photoinduced charge separation, in contrast to a global lattice constant increase and lattice angle variations as a result of heating. The finding of a photoinduced elastic unit cell deformation elucidates a microscopic picture of photocarrier-mediated nonequilibrium processes in polar materials.« less

  14. Bi-radiant oven: a low-energy oven system. Volume I. Development and assessment

    SciTech Connect (OSTI)

    DeWitt, D.P.; Peart, M.V.

    1980-04-01

    The Bi-Radiant Oven system has three important features which provide improved performance. First, the cavity walls are highly reflective rather than absorptive thereby allowing these surfaces to operate at cooler temperatures. Second, the heating elements, similar in construction to those in a conventional oven, but operating at much lower temperatures, provide a prescribed, balanced radiant flux to the top and bottom surfaces of the food product. And third, the baking and roasting utensil has a highly absorptive finish. Instrumentation and methods of measurements have been developed for obtaining the important oven and food parameters during baking: wall, oven air, food and element temperatures; food mass loss rate; irradiance distribution; and convection heat flux. Observations on an experimental oven are presented and discussed. Thermal models relating the irradiance distribution to oven parameters have been compared with measurements using a new heat flux gage developed for the project. Using the DOE recommended test procedures, oven efficiencies of 20 to 23% have been measured. The heating requirements have been determined for seven food types: biscuits, meat loaf, baked foods, apple crisp, cornbread, macaroni and cheese casserole, and cheese souffle. Comparison of energy use with a conventional electric oven shows that energy savings greater than 50% can be realized. Detailed energy balances have been performed on two foods - beef roasts and yellow cake. Consideration of consumer acceptability of this new oven concept have been addressed.

  15. Anisotropic small-polaron hopping in W:BiVO{sub 4} single crystals

    SciTech Connect (OSTI)

    Rettie, Alexander J. E.; Chemelewski, William D.; Zhou, Jianshi; Lindemuth, Jeffrey; McCloy, John S.; Marshall, Luke G.; Emin, David; Mullins, C. Buddie

    2015-01-12

    DC electrical conductivity, Seebeck and Hall coefficients are measured between 300 and 450 K on single crystals of monoclinic bismuth vanadate that are doped n-type with 0.3% tungsten donors (W:BiVO{sub 4}). Strongly activated small-polaron hopping is implied by the activation energies of the Arrhenius conductivities (about 300 meV) greatly exceeding the energies characterizing the falls of the Seebeck coefficients' magnitudes with increasing temperature (about 50 meV). Small-polaron hopping is further evidenced by the measured Hall mobility in the ab-plane (10{sup −1 }cm{sup 2 }V{sup −1 }s{sup −1} at 300 K) being larger and much less strongly activated than the deduced drift mobility (about 5 × 10{sup −5 }cm{sup 2 }V{sup −1 }s{sup −1} at 300 K). The conductivity and n-type Seebeck coefficient is found to be anisotropic with the conductivity larger and the Seebeck coefficient's magnitude smaller and less temperature dependent for motion within the ab-plane than that in the c-direction. These anisotropies are addressed by considering highly anisotropic next-nearest-neighbor (≈5 Å) transfers in addition to the somewhat shorter (≈4 Å), nearly isotropic nearest-neighbor transfers.

  16. Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications

    DOE Patents [OSTI]

    Albin, David S.; Carapella, Jeffrey J.; Tuttle, John R.; Contreras, Miguel A.; Gabor, Andrew M.; Noufi, Rommel; Tennant, Andrew L.

    1995-07-25

    A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se.sub.2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550.degree. C.) at which Cu(In,Ga)Se.sub.2 is solid and Cu.sub.x Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cu.sub.x Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cu.sub.x (In,Ga).sub.y Se.sub.z. The initial Cu-rich, phase separated large grain mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se can be made by sequentially depositing or co-depositing the metal precursors, Cu and (In, Ga), on the substrate at room temperature, ramping up the thin-film temperature in the presence of Se overpressure to a moderate anneal temperature (about 450.degree. C.) and holding that temperature and the Se overpressure for an annealing period. A nonselenizing, low temperature anneal at about 100.degree. C. can also be used to homogenize the precursors on the substrates before the selenizing, moderate temperature anneal.

  17. Breast Imaging Reporting and Data System (BI-RADS) breast composition descriptors: Automated measurement development for full field digital mammography

    SciTech Connect (OSTI)

    Fowler, E. E.; Sellers, T. A.; Lu, B.; Heine, J. J.

    2013-11-15

    Purpose: The Breast Imaging Reporting and Data System (BI-RADS) breast composition descriptors are used for standardized mammographic reporting and are assessed visually. This reporting is clinically relevant because breast composition can impact mammographic sensitivity and is a breast cancer risk factor. New techniques are presented and evaluated for generating automated BI-RADS breast composition descriptors using both raw and calibrated full field digital mammography (FFDM) image data.Methods: A matched case-control dataset with FFDM images was used to develop three automated measures for the BI-RADS breast composition descriptors. Histograms of each calibrated mammogram in the percent glandular (pg) representation were processed to create the new BR{sub pg} measure. Two previously validated measures of breast density derived from calibrated and raw mammograms were converted to the new BR{sub vc} and BR{sub vr} measures, respectively. These three measures were compared with the radiologist-reported BI-RADS compositions assessments from the patient records. The authors used two optimization strategies with differential evolution to create these measures: method-1 used breast cancer status; and method-2 matched the reported BI-RADS descriptors. Weighted kappa (?) analysis was used to assess the agreement between the new measures and the reported measures. Each measure's association with breast cancer was evaluated with odds ratios (ORs) adjusted for body mass index, breast area, and menopausal status. ORs were estimated as per unit increase with 95% confidence intervals.Results: The three BI-RADS measures generated by method-1 had ? between 0.250.34. These measures were significantly associated with breast cancer status in the adjusted models: (a) OR = 1.87 (1.34, 2.59) for BR{sub pg}; (b) OR = 1.93 (1.36, 2.74) for BR{sub vc}; and (c) OR = 1.37 (1.05, 1.80) for BR{sub vr}. The measures generated by method-2 had ? between 0.420.45. Two of these measures were significantly associated with breast cancer status in the adjusted models: (a) OR = 1.95 (1.24, 3.09) for BR{sub pg}; (b) OR = 1.42 (0.87, 2.32) for BR{sub vc}; and (c) OR = 2.13 (1.22, 3.72) for BR{sub vr}. The radiologist-reported measures from the patient records showed a similar association, OR = 1.49 (0.99, 2.24), although only borderline statistically significant.Conclusions: A general framework was developed and validated for converting calibrated mammograms and continuous measures of breast density to fully automated approximations for the BI-RADS breast composition descriptors. The techniques are general and suitable for a broad range of clinical and research applications.

  18. Novel Approaches to Wide Bandgap CuInSe2 Based Absorbers

    SciTech Connect (OSTI)

    William N. Shafarman

    2011-04-28

    This project targeted the development of high performance wide bandgap solar cells based on thin film alloys of CuInSe2 to relax constraints on module design and enable tandem solar cell structures. This addressed goals of the Solar Energy Technologies Program for Next Generation PV to develop technology needed for higher thin film module efficiency as a means to reduce costs. Specific objectives of the research project were: 1) to develop the processes and materials required to improve the performance of wide bandgap thin film solar cells based on alloys of CuInSe2, and 2) to provide the fundamental science and engineering basis for the material, electronic, and device properties required to effectively apply these processes and materials to commercial manufacture. CuInSe2-based photovoltaics have established the highest efficiencies of the thin film materials at both the cell and module scales and are actively being scaled up to commercialization. In the highest efficiency cells and modules, the optical bandgap, a function of the CuInSe2-based alloy composition, is relatively low compared to the optimum match to the solar spectrum. Wider bandgap alloys of CuInSe2 produce higher cell voltages which can improve module performance and enable the development of tandem solar cells to boost the overall efficiency. A focus for the project was alloying with silver to form (AgCu)(InGa)Se2 pentenary thin films deposited by elemental co-evaporation which gives the broadest range of control of composition and material properties. This alloy has a lower melting temperature than Ag-free, Cu-based chalcopyrite compounds, which may enable films to be formed with lower defect densities and the (AgCu)(InGa)Se2 films give improved material properties and better device performance with increasing bandgap. A comprehensive characterization of optical, structural, and electronic properties of (AgCu)(InGa)Se2 was completed over the complete compositional range 0 ≤ Ga/(In+Ga) ≤ 1 and 0 ≤ Ag/(Ag+Cu) ≤ 1. Evidence of improved material quality includes reduced sub-bandgap optical absorption, sharper bandtails, and increased grain size with Ag addition. The Ag alloying was shown to increase the range of bandgaps over which solar cells can be fabricated without any drop-off in performance. With bandgap greater than 1.6 eV, in the range needed for tandem solar cells, (AgCu)(InGa)Se2 gave higher efficiency than other CuInSe2-based alloys. Using a simple single-stage co-evaporation process, a solar cell with 17.6% efficiency using a film with bandgap = 1.3 eV was achieved, demonstrating the viability of (AgCu)(InGa)Se2 for high efficiency devices. With a three-stage co-evaporation process for (AgCu)(InGa)Se2 deposition a device with efficiency = 13.0 % and VOC = 890 mV with JSC = 20.5 mA/cm2, FF = 71.3% was achieved. This surpasses the performance of other wide bandgap CuInSe2-based solar cells. Detailed characterization of the electronic properties of the materials and devices including the application of advanced admittance-based easements was completed.

  19. In-situ surface composition measurements of CuGaSe{sub 2} thin films

    SciTech Connect (OSTI)

    Fons, P.; Yamada, A.; Niki, S.; Oyanagi, H.

    1998-12-31

    Two CuGaSe{sub 2} films were grown by molecular beam epitaxy onto GaAs (001) substrates with varying Cu/Ga flux ratios under Se overpressure conditions. Growth was interrupted at predetermined times and the surface composition was measured using Auger electron spectroscopy after which growth was continued. After growth, the film composition was analyzed using voltage dependent electron microprobe spectroscopy. Film structure and morphology were also analyzed using x-ray diffraction and atomic force microscopy. The film with a Cu/Ga ratio larger than unity showed evidence of surface segregation of a second Cu-rich phase with a Cu/Se composition ratio slightly greater than unity. A second CuGaSe{sub 2} film with a Cu/Ga ratio of less than unity showed no change in surface composition with time and was also consistent with bulk composition measurements. Diffraction measurements indicated a high concentration of twins as well as the presence of domains with mixed c and a axes in the Ga-rich film. The Cu-rich films by contrast were single domain and had a narrower mosaics. High sensitivity scans along the [001] reciprocal axis did not exhibit any new peaks not attributable to either the substrate or the CuGaSe{sub 2} thin film.

  20. Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells

    DOE Patents [OSTI]

    Noufi, R.; Gabor, A.M.; Tuttle, J.R.; Tennant, A.L.; Contreras, M.A.; Albin, D.S.; Carapella, J.J.

    1995-08-15

    A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S){sub 2} comprises depositing a first layer of (In,Ga){sub x} (Se,S){sub y} followed by depositing just enough Cu+(Se,S) or Cu{sub x} (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga){sub x} (Se,S){sub y} is deposited first, followed by deposition of all the Cu+(Se,S) or Cu{sub x} (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu{sub x} (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga){sub x} (Se,S){sub y} to go slightly Cu-poor in the final Cu(In,Ga)(Se,S){sub 2} thin film. 5 figs.

  1. Method of fabricating high-efficiency Cu(In,Ga)(SeS).sub.2 thin films for solar cells

    DOE Patents [OSTI]

    Noufi, Rommel; Gabor, Andrew M.; Tuttle, John R.; Tennant, Andrew L.; Contreras, Miguel A.; Albin, David S.; Carapella, Jeffrey J.

    1995-01-01

    A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S).sub.2 comprises depositing a first layer of (In,Ga).sub.x (Se,S).sub.y followed by depositing just enough Cu+(Se,S) or Cu.sub.x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga).sub.x (Se,S).sub.y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu.sub.x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu.sub.x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga).sub.x (Se,S).sub.y to go slightly Cu-poor in the final Cu(In,Ga)(Se,S).sub.2 thin film.

  2. Synthesis of mesoporous Bi{sub 2}O{sub 3}/CeO{sub 2} microsphere for photocatalytic degradation of Orange II dye

    SciTech Connect (OSTI)

    Hsieh, Shu-Han; Manivel, Arumugam; Lee, Gang-Juan; Wu, Jerry J.

    2013-10-15

    Graphical abstract: - Highlights: Bi{sub 2}O{sub 3}/CeO{sub 2} microspheres were successfully synthesized by a hydrothermal procedure. Bi{sub 2}O{sub 3}/CeO{sub 2} microspheres were used to remove wastewater pollutant containing azo dye. The activity of Bi{sub 2}O{sub 3}/CeO{sub 2} is synergically enhanced compared to its pristine forms. - Abstract: We report on the visible-light responsive porous assembly of Bi{sub 2}O{sub 3}/CeO{sub 2} microspheres, which were synthesized via a simple hydrothermal reaction between Bi(NO{sub 3}){sub 3}5H{sub 2}O and Ce(NO{sub 3}){sub 3}6H{sub 2}O in the presence of ethylene glycol and ethanol. Systematic structural (X-ray diffraction (XRD)), morphological (field emission scanning electron microscopy (FE-SEM) and transmission electron microscopic (TEM)), BET surface area and diffuse reflectance spectral (DRS) analyses were carried out to characterize the formed product. The effects of experimental parameters on the microstructural and morphological behavior of Bi{sub 2}O{sub 3}/CeO{sub 2} composites were discussed. The semiconductor material as obtained was evaluated as a heterogeneous photocatalyst for the photolytic degradation of an azo dye in water and the degradation was found to follow pseudo-first-order rate kinetics. The study compares the rate constants of the new hybrid catalyst to a pristine Bi{sub 2}O{sub 3} and CeO{sub 2}, which has excellent catalytic properties under visible light irradiation for the degradation of Orange II dye.

  3. Charge-transfer dynamics in multilayered PbS and PbSe quantum dot architectures

    SciTech Connect (OSTI)

    Xu, F.; Ma, X.; Haughn, C. R.; Doty, M. F.; Cloutier, S. G.

    2014-02-03

    We demonstrate control of the charge transfer process in PbS and PbSe quantum dot assemblies. We first demonstrate efficient charge transfer from donor quantum dots to acceptor quantum dots in a multi-layer PbSe cascade structure. Then, we assemble type-I and type-II heterostructures using both PbS and PbSe quantum dots via careful control of the band alignment. In type-I structures, photo-generated carriers are transferred and localized in the smaller bandgap (acceptor) quantum dots, resulting in a significant luminescence enhancement. In contrast, a significant luminescence quenching and shorter emission lifetime confirms an efficient separation of photo-generated carriers in the type-II architecture.

  4. Luminescence of CdSe/ZnS quantum dots infiltrated into an opal matrix

    SciTech Connect (OSTI)

    Gruzintsev, A. N. Emelchenko, G. A.; Masalov, V. M.; Yakimov, E. E.; Barthou, C.; Maitre, A.

    2009-02-15

    The effect of the photonic band gap in the photonic crystal, the synthesized SiO{sub 2} opal with embedded CdSe/ZnS quantum dots, on its luminescence in the visible spectral region is studied. It is shown that the position of the photonic band gap in the luminescence and reflectance spectra for the infiltrated opal depends on the diameter of the constituent nanospheres and on the angle of recording the signal. The optimal conditions for embedding the CdSe/ZnS quantum dots from the solution into the opal matrix are determined. It is found that, for the opal-CdSe/ZnS nanocomposites, the emission intensity decreases and the luminescence decay time increases in the spatial directions, in which the spectral positions of the photonic band gap and the luminescence peak of the quantum dots coincide.

  5. Role of polycrystallinity in CdTe and CuInSe sub 2 photovoltaic cells

    SciTech Connect (OSTI)

    Sites, J.R. )

    1991-01-01

    The polycrystalline nature of thin-film CdTe and CuInSe{sub 2} solar cells continues to be a major factor in several individual losses that limit overall cell efficiency. This report describes progress in the quantitative separation of these losses, including both measurement and analysis procedures. It also applies these techniques to several individual cells to help document the overall progress with CdTe and CuInSe{sub 2} cells. Notably, CdTe cells from Photon Energy have reduced window photocurrent losses to 1 mA/Cm{sup 2}; those from the University of South Florida have achieved a maximum power voltage of 693 mV; and CuInSe{sub 2} cells from International Solar Electric Technology have shown a hole density as high as 7 {times} 10{sup 16} cm{sup {minus}3}, implying a significant reduction in compensation. 9 refs.

  6. A Novel and Functional Single Layer Sheet of ZnSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhou, Jia; Sumpter, Bobby G; Kent, Paul R; Huang, Jingsong

    2015-01-01

    In this Communication, we report a novel singlelayer sheet of ZnSe, with a three-atomic thickness, which demonstrates a strong quantum confinement effect by exhibiting a large blue shift of 2.0 eV in its absorption edge relative to the zinc blende (ZB) bulk phase. Theoretical optical absorbance shows that the largest absorption of this ultrathin single-layer sheet of ZnSe occurs at a wavelength similar to its four-atom-thick doublelayer counterpart but with higher photoabsorption efficiency, suggesting a superior behavior on incident photon-to-current conversion efficiency for solar water splitting, among other potential applications. The results presented herein for ZnSe may be generalized tomore » other group II-VI analogues.« less

  7. Two-step growth of two-dimensional WSe2/MoSe2 heterostructures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gong, Yongji; Lei, Sidong; Lou, Jun; Liu, Zheng; Vajtai, Robert; Zhou, Wu; Ajayan, Pullikel M.

    2015-08-03

    Two dimensional (2D) materials have attracted great attention due to their unique properties and atomic thickness. Although various 2D materials have been successfully synthesized with different optical and electrical properties, a strategy for fabricating 2D heterostructures must be developed in order to construct more complicated devices for practical applications. Here we demonstrate for the first time a two-step chemical vapor deposition (CVD) method for growing transition-metal dichalcogenide (TMD) heterostructures, where MoSe2 was synthesized first and followed by an epitaxial growth of WSe2 on the edge and on the top surface of MoSe2. Compared to previously reported one-step growth methods, thismore » two-step growth has the capability of spatial and size control of each 2D component, leading to much larger (up to 169 μm) heterostructure size, and cross-contamination can be effectively minimized. Furthermore, this two-step growth produces well-defined 2H and 3R stacking in the WSe2/MoSe2 bilayer regions and much sharper in-plane interfaces than the previously reported MoSe2/WSe2 heterojunctions obtained from one-step growth methods. The resultant heterostructures with WSe2/MoSe2 bilayer and the exposed MoSe2 monolayer display rectification characteristics of a p-n junction, as revealed by optoelectronic tests, and an internal quantum efficiency of 91% when functioning as a photodetector. As a result, a photovoltaic effect without any external gates was observed, showing incident photon to converted electron (IPCE) efficiencies of approximately 0.12%, providing application potential in electronics and energy harvesting.« less

  8. Direct Observation of Energy-Gap Scaling Law in CdSe Quantum Dots with Positrons

    SciTech Connect (OSTI)

    Denison, Arthur Blanchard; Weber, M. H.; Lynn, K. G.; Barbiellini, B.; Sterne, P. A.

    2002-07-01

    CdSe quantum dot samples with sizes in the range of 1.8~6 nm in diameter were examined by positron annihilation spectroscopy. The results were compared to data obtained for single-crystal bulk CdSe. Evidence is provided that the positrons annihilate within the nanospheres. The annihilation line shape shows a smearing at the boundary of the Jones zone proportional to the widening of the band gap due to a reduction in the size of the quantum dots. The data confirm that the change in the band gap is inversely proportional to the square of the quantum dot diameter.

  9. Thickness-dependent coherent phonon frequency in ultrathin FeSe/SrTiO3

    Office of Scientific and Technical Information (OSTI)

    films (Journal Article) | SciTech Connect Thickness-dependent coherent phonon frequency in ultrathin FeSe/SrTiO3 films Citation Details In-Document Search Title: Thickness-dependent coherent phonon frequency in ultrathin FeSe/SrTiO3 films × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional information

  10. Ordering mechanism of stacked CdSe/ZnS{sub x}Se{sub 1-x} quantum dots: A combined reciprocal-space and real-space approach

    SciTech Connect (OSTI)

    Schmidt, Th.; Roventa, E.; Clausen, T.; Flege, J. I.; Alexe, G.; Rosenauer, A.; Hommel, D.; Falta, J.; Bernstorff, S.; Kuebel, C.

    2005-11-15

    The vertical and lateral ordering of stacked CdSe quantum dot layers embedded in ZnS{sub x}Se{sub 1-x} has been investigated by means of grazing incidence small angle x-ray scattering and transmission electron microscopy. Different growth parameters have been varied in order to elucidate the mechanisms leading to quantum dot correlation. From the results obtained for different numbers of quantum dot layers, we conclude on a self-organized process which leads to increasing ordering for progressive stacking. The dependence on the spacer layer thickness indicates that strain induced by lattice mismatch drives the ordering process, which starts to break down for too thick spacer layers in a thickness range from 45 to 80 A. Typical quantum dot distances in a range from about 110 to 160 A have been found. A pronounced anisotropy of the quantum dot correlation has been observed, with the strongest ordering along the [110] direction. Since an increased ordering is found with increasing growth temperature, the formation of stacking faults as an additional mechanism for quantum dot alignment can be ruled out.

  11. Influence of Sn on the thermoelectric properties of (Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals

    SciTech Connect (OSTI)

    Kulbachinskii, V.A.; Kytin, V.G.; Kudryashov, A.A.; Lunin, R.A.

    2012-09-15

    The influence of tin on the thermoelectric properties of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals (x=0; 0.25; 0.5) has been investigated. The temperature dependence of the Seebeck coefficient S, the electrical conductivity {sigma}, the heat conductivity k and the thermoelectric figure of merit of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals were measured in the temperature range 7-300 K. By an increase the Sn content, the hole concentration increases in p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3}. The heat conductivity k of the p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3} crystals decreases due to the Sn doping, while the electrical conductivity {sigma} increases in the temperature interval about 200Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals (x=0; 0.25; 0.5) has been investigated. Temperature dependence of Seebeck coefficient S, electrical conductivity {sigma}, thermal conductivity k and figure of merit of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals were measured in the temperature range 7-300 K. Electrical conductivity increases in the temperature interval 150KBi content x increases in solid solution (Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} as shown in figure. By increasing the Sn content, the hole concentration increases in p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3}. The thermal conductivity k of the p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3} crystals decreases due to Sn doping. The Seebeck coefficient S for all compositions is positive and decreases due to Sn doping in the whole temperature range due to increase of the hole concentration under Sn doping. Highlights: Black-Right-Pointing-Pointer thermoelectric figure of merit for p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} investigated at 7-300 K. Black-Right-Pointing-Pointer preferential scattering is ionized impurity scattering in Sn doped samples. Black-Right-Pointing-Pointer electrical conductivity increases at 150 KBi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3} with Sn doping. Black-Right-Pointing-Pointer the thermal conductivity of (Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3} decreases due to Sn doping.

  12. Fabrication, characterization and photocatalytic properties of Ag/AgI/BiOI heteronanostructures supported on rectorite via a cation-exchange method

    SciTech Connect (OSTI)

    Chen, Yunfang; Fang, Jianzhang; Lu, Shaoyou; Wu, Yan; Chen, Dazhi; Huang, Liyan; Xu, Weicheng; Zhu, Ximiao; Fang, Zhanqiang

    2015-04-15

    Highlights: • Ag/AgI/BiOI-rectorite was prepared by twice cation-exchange process. • Ag/AgI/BiOI-rectorite photocatalyst possessed SPR and adsorption capacity. • Ag/AgI/BiOI-rectorite exhibited highly photocatalytic activity. • Trapped holes and ·O{sub 2}{sup −} were formed active species in the photocatalytic system. - Abstract: In this work, a new plasmonic photocatalyst Ag/AgI/BiOI-rectorite was prepared via a cation exchange process. The photocatalyst had been characterized by X-ray powder diffraction (XRD), Raman spectra, nitrogen sorption (BET), field-emission scanning electron microscope (FE-SEM), X-ray photoelectron spectroscopy (XPS) and UV–vis diffuse reflectance spectroscopy (DRS). The photocatalytic activity, which was evaluated by degradation of rhodamine B (RhB) and bisphenol A (BPA) under visible light irradiation, was enhanced significantly by loading Ag/AgI/BiOI nanoparticles onto rectorite. The photogenerated holes and superoxide radical (·O{sub 2}{sup −}) were both formed as active species for the photocatalytic reactions under visible light irradiation. The existence of metallic Ag particles, which possess the surface plasmon resonance effect, acted as an indispensable role in the photocatalytic reaction.

  13. Ferromagnetism of magnetically doped topological insulators in Cr{sub x}Bi{sub 2−x}Te{sub 3} thin films

    SciTech Connect (OSTI)

    Ni, Y.; Zhang, Z. Hadimani, R. L.; Tuttle, G.; Jiles, D. C.; Nlebedim, I. C.

    2015-05-07

    We investigated the effect of magnetic doping on magnetic and transport properties of Bi{sub 2}Te{sub 3} thin films. Cr{sub x}Bi{sub 2−x}Te{sub 3} thin films with x = 0.03, 0.14, and 0.29 were grown epitaxially on mica substrate with low surface roughness (∼0.4 nm). It is found that Cr is an electron acceptor in Bi{sub 2}Te{sub 3} and increases the magnetization of Cr{sub x}Bi{sub 2−x}Te{sub 3}. When x = 0.14 and 0.29, ferromagnetism appears in Cr{sub x}Bi{sub 2−x}Te{sub 3} thin films, where anomalous Hall effect and weak localization of magnetoconductance were observed. The Curie temperature, coercivity, and remnant Hall resistance of thin films increase with increasing Cr concentration. The Arrott-Noakes plot demonstrates that the critical mechanism of the ferromagnetism can be described better with 3D-Heisenberg model than with mean field model. Our work may benefit for the practical applications of magnetic topological insulators in spintronics and magnetoelectric devices.

  14. T-641: Oracle Java SE Critical Patch Update Advisory- June 2011

    Broader source: Energy.gov [DOE]

    This Critical Patch Update contains 17 new security fixes for Oracle Java SE - 5 apply to client and server deployments of Java SE, 11 apply to client deployments of Java SE only, and 1 applies to server deployments of Java SE only. All of these vulnerabilities may be remotely exploitable without authentication, i.e., may be exploited over a network without the need for a username and password. Oracle CVSS scores assume that a user running a Java applet or Java Web Start application has administrator privileges (typical on Windows). Where the user does not run with administrator privileges (typical on Solaris and Linux), the corresponding CVSS impact scores for Confidentiality, Integrity, and Availability are "Partial" instead of "Complete", and the corresponding CVSS Base score is 7.5 instead of 10 respectively. For issues in Deployment, fixes are only made available for JDK and JRE 6. Users should use the Java Web Start in JRE 6 and the new Java Plug-in introduced in 6 Update 10. CVE-2011-0862, CVE-2011-0873, CVE-2011-0815, CVE-2011-0817, CVE-2011-0863, CVE-2011-0864, CVE-2011-0802, CVE-2011-0814, CVE-2011-0871, CVE-2011-0786, CVE-2011-0788, CVE-2011-0866, CVE-2011-0868, CVE-2011-0872, CVE-2011-0867, CVE-2011-0869, and CVE-2011-0865

  15. Low-temperature photoluminescence analysis of CdTeSe crystals for radiation-detector applications

    SciTech Connect (OSTI)

    YANG G.; Roy, U. N.; Bolotnikov, A. E.; Cui, Y.; Camarda, G.S.; Hossain, A.; and James, R. B.

    2015-10-05

    Goal: Understanding the changes of material defects in CdTeSe following annealing. Experimental results and discussions: Infrared (IR) transmission microscopy; current-voltage measurements (Highlight: Improvement of resistivity of un-doped crystals after annealing); low-temperature photoluminescence (PL) spectrum of as-grown and annealed samples.

  16. Stability of S and Se induced reconstructions on GaP(001)(21) surface

    SciTech Connect (OSTI)

    Li , D. F.; Guo, Zhi C.; Xiao, Hai Yan; Zu, Xiaotao T.; Gao, Fei

    2010-10-15

    The structural and electronic properties of S- and Se- passivated GaP(001)(21) surfaces were studied using first-principles simulations. Our calculations showed that the most stable structure consists of a single chalcogen atom (S or Se) in the first crystal layer, which is bonded to two Ga atoms of the second layer, and the third P layer replaced by chalcogen atoms, similar to the passivation of GaAs(001)(21) surface by chalcogen atoms. The structural parameters were determined and the surface band characters and the local density of states were also analyzed. The results showed that the preferable structure has no surface states in the bulk band gap, but the energy band gaps of the S- and Se-adsorbed GaP(001) surfaces are 1.83eV and 1.63eV, respectively. The passivation effects for the S- and Se-adsorbed surfaces are similar to each other.

  17. T-558: Oracle Java SE and Java for Business Critical Patch Update Advisory- February 2011

    Broader source: Energy.gov [DOE]

    This Critical Patch Update contains 21 new security fixes for Oracle Java SE and Java for Business. 19 of these vulnerabilities may be remotely exploitable without authentication, i.e., may be exploited over a network without the need for a username and password.

  18. Experimental Cross Sections for Reactions of Heavy Ions and 208Pb, 209Bi, 238U, and 248Cm Targets

    SciTech Connect (OSTI)

    Patin, Joshua B.

    2002-05-24

    The study of the reactions between heavy ions and {sup 208}Pb, {sup 209}Bi, {sup 238}U, and {sup 248} Cm targets was performed to look at the differences between the cross sections of hot and cold fusion reactions. Experimental cross sections were compared with predictions from statistical computer codes to evaluate the effectiveness of the computer code in predicting production cross sections. Hot fusion reactions were studied with the MG system, catcher foil techniques and the Berkeley Gas-filled Separator (BGS). 3n- and 4n-exit channel production cross sections were obtained for the {sup 238}U({sup 18}O,xn){sup 256-x}Fm, {sup 238}U({sup 22}Ne,xn){sup 260-x}No, and {sup 248}Cm({sup 15}N,xn){sup 263-x}Lr reactions and are similar to previous experimental results. The experimental cross sections were accurately modeled by the predictions of the HIVAP code using the Reisdorf and Schaedel parameters and are consistent with the existing systematics of 4n exit channel reaction products. Cold fusion reactions were examined using the BGS. The {sup 208}Pb({sup 48}Ca,xn){sup 256-x}No, {sup 208}Pb({sup 50}Ti,xn){sup 258-x}Rf, {sup 208}Pb({sup 51}V,xn){sup 259-x}Db, {sup 209}Bi({sup 50}Ti,xn){sup 259-x}Db, and {sup 209}Bi({sup 51}V,xn){sup 260-x}Sg reactions were studied. The experimental production cross sections are in agreement with the results observed in previous experiments. It was necessary to slightly alter the Reisdorf and Schaedel parameters for use in the HIVAP code in order to more accurately model the experimental data. The cold fusion experimental results are in agreement with current 1n- and 2n-exit channel systematics.

  19. Crystal structural study of ternary molybdate LiRbBi{sub 2}(MoO{sub 4}){sub 4}

    SciTech Connect (OSTI)

    Klevtsova, R.F.; Glinskaya, L.A.; Alekseev, V.I.

    1994-03-01

    Single crystals of the title compound have been synthesized and its crystal structure has been determined. The compound crystallizes in the monoclinic system, space group C2/c, Z = 2 (a = 5.3056, b = 12.976, c = 19.578 {angstrom}, {beta} = 92.583{degrees}, R = 0.029). A distinctive feature of the structure is lacy layers of eight-vertex Bi polyhedra and Mo tetrahedra connected to them via common vertices. The adjacent layers are linked together by ten-vertex Rb polyhedra and Li octahedra.

  20. Manipulation of subsurface carbon nanoparticles in Bi?Sr?CaCu?O8+? using a scanning tunneling microscope

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Stollenwerk, A. J.; Gu, G.; Hurley, N.; Beck, B.; Spurgeon, K.; Kidd, T. E.

    2015-03-01

    We present evidence that subsurface carbon nanoparticles in Bi?Sr?CaCu?O8+? can be manipulated with nanometer precision using a scanning tunneling microscope. High resolution images indicate that most of the carbon particles remain subsurface after transport observable as a local increase in height as the particle pushes up on the surface. Tunneling spectra in the vicinity of these protrusions exhibit semiconducting characteristics with a band gap of approximately 1.8 eV, indicating that the incorporation of carbon locally alters the electronic properties near the surface.

  1. Study on neutronic of very small Pb - Bi cooled no-onsite refueling nuclear power reactor (VSPINNOR)

    SciTech Connect (OSTI)

    Arianto, Fajar; Su'ud, Zaki; Zuhair

    2014-09-30

    A conceptual design study on Very Small Pb-Bi No-Onsite Refueling Cooled Nuclear Reactor (VSPINNOR) with Uranium nitride fuel using MCNPX program has been performed. In this design the reactor core is divided into three regions with different enrichment. At the center of the core is laid fuel without enrichment (internal blanket). While for the outer region using fuel enrichment variations. VSPINNOR fast reactor was operated for 10 years without refueling. Neutronic analysis shows optimized result of VSPINNOR has a core of 50 cm radius and 100 cm height with 300 MWth thermal power output at 60% fuel fraction that can be operated 18 years without refueling or fuel shuffling.

  2. Technical evaluation and assessment of CNG/LPG bi-fuel and flex-fuel vehicle viability

    SciTech Connect (OSTI)

    Sinor, J E

    1994-05-01

    This report compares vehicles using compressed natural gas (CNG), liquefied petroleum gas (LPG), and combinations of the two in bi-fuel or flex-fuel configurations. Evidence shows that environmental and energy advantages can be gained by replacing two-fuel CNG/gasoline vehicles with two-fuel or flex-fuel systems to be economically competitive, it is necessary to develop a universal CNG/LPG pressure-regulator-injector and engine control module to switch from one tank to the other. For flex-fuel CNG/LPG designs, appropriate composition sensors, refueling pumps, fuel tanks, and vaporizers are necessary.

  3. Measuring bi-directional current through a field-effect transistor by virtue of drain-to-source voltage measurement

    DOE Patents [OSTI]

    Turner, Steven Richard

    2006-12-26

    A method and apparatus for measuring current, and particularly bi-directional current, in a field-effect transistor (FET) using drain-to-source voltage measurements. The drain-to-source voltage of the FET is measured and amplified. This signal is then compensated for variations in the temperature of the FET, which affects the impedance of the FET when it is switched on. The output is a signal representative of the direction of the flow of current through the field-effect transistor and the level of the current through the field-effect transistor. Preferably, the measurement only occurs when the FET is switched on.

  4. Manufacturable CuIn(Ga)Se{sub 2}-based solar cells via development of co-sputtered CuInSe{sub 2} absorber layers

    SciTech Connect (OSTI)

    Dr. Ingrid Eisgruber

    1999-03-20

    Yield and reproducibility remain issues in CuIn(Ga)Se{sub 2} (CIGS) photovoltaic module fabrication. While small-area cells (<1 cm{sup 2}) over 18% efficient have been reported, the best large-area manufactured devices (>1 ft{sup 2}) are 11% efficient with about 60% yield. If improvements in large-area manufacturing can accomplish 15% efficiency and 90% yield, the result is a doubling in throughput leading to a reduction in cost per watt of over 50%. The challenge now facing the photovoltaics industry is to bring the efficiencies of small-area cells and large-area industrial modules closer together and to raise manufacturing yields.

  5. Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization

    DOE Patents [OSTI]

    Tuttle, J.R.; Contreras, M.A.; Noufi, R.; Albin, D.S.

    1994-10-18

    Enhanced quality thin films of Cu[sub w](In,Ga[sub y])Se[sub z] for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu[sub x]Se on a substrate to form a large-grain precursor and then converting the excess Cu[sub x]Se to Cu(In,Ga)Se[sub 2] by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)[sub y]Se[sub z]. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300--600 C, where the Cu(In,Ga)Se[sub 2] remains solid, while the excess Cu[sub x]Se is in a liquid flux. The characteristic of the resulting Cu[sub w](In,Ga)[sub y]Se[sub z] can be controlled by the temperature. Higher temperatures, such as 500--600 C, result in a nearly stoichiometric Cu(In,Ga)Se[sub 2], whereas lower temperatures, such as 300--400 C, result in a more Cu-poor compound, such as the Cu[sub z](In,Ga)[sub 4]Se[sub 7] phase. 7 figs.

  6. Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization

    DOE Patents [OSTI]

    Tuttle, John R.; Contreras, Miguel A.; Noufi, Rommel; Albin, David S.

    1994-01-01

    Enhanced quality thin films of Cu.sub.w (In,Ga.sub.y)Se.sub.z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu.sub.x Se on a substrate to form a large-grain precursor and then converting the excess Cu.sub.x Se to Cu(In,Ga)Se.sub.2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga).sub.y Se.sub.z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300.degree.-600.degree. C., where the Cu(In,Ga)Se.sub.2 remains solid, while the excess Cu.sub.x Se is in a liquid flux. The characteristic of the resulting Cu.sub.w (In,Ga).sub.y Se.sub.z can be controlled by the temperature. Higher temperatures, such as 500.degree.-600.degree. C., result in a nearly stoichiometric Cu(In,Ga)Se.sub.2, whereas lower temperatures, such as 300.degree.-400.degree. C., result in a more Cu-poor compound, such as the Cu.sub.z (In,Ga).sub.4 Se.sub.7 phase.

  7. Structure and ferroelectricity of nonstoichiometric (Na{sub 0.5}Bi{sub 0.5})TiO{sub 3}

    SciTech Connect (OSTI)

    Carter, Jared; Aksel, Elena; Iamsasri, Thanakorn; Forrester, Jennifer S.; Jones, Jacob L.; Chen, Jun

    2014-03-17

    Stoichiometric (Na{sub 0.5}Bi{sub 0.5})TiO{sub 3} (NBT) adopts the ABO{sub 3} perovskite structure with the A-site equally occupied by Na{sup +} and Bi{sup 3+} ions. However, non-stoichiometric compositions can be synthesized intentionally or unintentionally. To determine the effect of A-site nonstoichiometry on the crystal structure and ferroelectricity of NBT, the composition of (Na{sub 0.5?x}Bi{sub 0.5+x})TiO{sub 3+x} was varied using x?=??0.01, ?0.005, 0, 0.005, and 0.01. High resolution synchrotron x-ray diffraction and Rietveld refinement revealed that a shift in either direction from x = 0 results in a decrease in the spontaneous ferroelastic strain. Ferroelectric hysteresis and piezoelectric coefficients were found to be optimum in the stoichiometric composition.

  8. Measurement of conversion electrons with the {sup 208}Pb(p,n){sup 208}Bi reaction and derivation of the shell model proton neutron hole interaction from the properties of {sup 208}Bi

    SciTech Connect (OSTI)

    Maier, K. H.; Kibedi, T.; Dracoulis, G. D.; Davidson, P. M.; Lane, G. J.; Nieminen, P.; Watanabe, H.; Boutachkov, P.; Aprahamian, A.; Byrne, A. P.; Marie-Jeanne, M.

    2007-12-15

    Conversion electrons from {sup 208}Bi have been measured using singles and coincidence techniques with the {sup 208}Pb(p,n){sup 208}Bi reaction at 9 MeV. The new information on multipolarities and spins complements that available from recent {gamma}-{gamma}-coincidence studies with the same reaction [Boutachkov et al., Nucl. Phys. A768, 22 (2006)]. The results on electromagnetic decays taken together with information on spectroscopic factors from earlier single-particle transfer reaction measurements represent an extensive data set on the properties of the one-proton one-neutron-hole states below 3 MeV, a spectrum which is virtually complete. Comparison of the experimental observables, namely, energies, spectroscopic factors, and {gamma}-branching ratios, with those calculated within the shell model allows extraction of the matrix elements of the shell model residual interaction. More than 100 diagonal and nondiagonal elements can be determined in this way, through a least squares fit to the experimental data. This adjustment of the interaction significantly affects the calculated properties of the {gamma}-ray transitions. Nevertheless, the matrix elements thus obtained are remarkably similar to those of a realistic interaction calculated from free-nucleon scattering. Characteristic features of the interaction are discussed.

  9. Corrosion and degradation of test materials in the BI-GAS coal-gasification pilot plant

    SciTech Connect (OSTI)

    Yurkewycz, R.; Firestone, R.F.

    1982-02-01

    Corrosion monitoring of test materials was conducted in the BI-GAS coal gasification pilot plant from 1976 through 1981. Montana Rosebud subbituminous coal was processed at pressures of 750 psia (5175 kPa). Metals were exposed at low to moderate temperatures (700/sup 0/F (371/sup 0/C)) in the coal preparation area, gasifier slag quench, and the product gas scrubbing system. Refractories and metals were evaluated in the gasifier high temperature (1372/sup 0/F (744/sup 0/C)-1915/sup 0/F (1046/sup 0/C)) test sites at the top of stage II. In the moderate temperature aqueous environments, alloys 26-1, Types 329, 304, 316, 405, and IN-825 were superior in performance to Monel 400, carbon steel A515, and 2-1/4Cr-1Mo. Stress corrosion cracking was not observed in welded U-bend samples (A515, 304, 316, 329, 26-1). First-exposure gasifier corrosion test results generally indicated that uncoated alloys with 23.0 to 26.2 wt % Cr and less than 30 wt % Ni exhibited the best performance. Alloy Types 446 and 310 experienced the least corrosion attack with linear corrosion rates less than 20 mpy (0.51 mm/y); marginal performing alloys were Type 314, 22-13-5, and RA-333. During the second exposure, all uncoated alloys incurred acceptable corrosion losses. Alloys with Co, Cr, and Ni (N155, 556) in approximately equal proportions, at concentrations of approx. 20 wt %, ranked higher in performance than alloys such as Type 310, IN-800, Cru-25, and RA-333. Gasifier exposure of pack-aluminized alloys IN-800(A1) and Type 310(A1)showed that the coating provided corrosion protection. Cracks in the bulk coating were filled with Fe-Al rich oxides. The refractories were changed very little by exposure with two exceptions: tar was removed from a tar-impregnated brick, and a lightweight insulating castable deteriorated greatly.

  10. Algorithmically scalable block preconditioner for fully implicit shallow water equations in CAM-SE

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lott, P Aaron; Woodward, Carol; Evans, Katherine J

    2015-01-01

    Performing accurate and efficient numerical simulation of global atmospheric climate models is challenging due to the disparate length and time scales over which physical processes interact. Implicit solvers enable the physical system to be integrated with a time step commensurate with processes being studied. The dominant cost of an implicit time step is the ancillary linear system solves, so we have developed a preconditioner aimed at improving the efficiency of these linear system solves. Our preconditioner is based on an approximate block factorization of the linearized shallow-water equations and has been implemented within the spectral element dynamical core within themore » Community Atmospheric Model (CAM-SE). In this paper we discuss the development and scalability of the preconditioner for a suite of test cases with the implicit shallow-water solver within CAM-SE.« less

  11. Low-cost CuInSe[sub 2] submodule development

    SciTech Connect (OSTI)

    Basol, B.M.; Kapur, V.K.; Halani, A.; Leidholm, C. )

    1992-10-01

    Aim of this project is development and demonstration of processing steps necessary for fabrication of high efficiency CuInSe[sub 2] solar cells and sub-modules by the two-stage technique (also called the selenization method.) During this period, we have optimized the processing parameters of this method and demonstrated CuInSe[sub 2]/CdS/ZnO devices with a 1[endash]4 cm[sup 2] area and up to 12.4% active area efficiency. We have also developed a novel approach for the preparation of Cu/In precursors that improved the stoichiometric and morphological uniformity in these films. We have developed processing steps and tooling for handling up to 1 ft[sup 2] size substrates and as a result of these efforts demonstrated our first monolithically integrated sub-module of 1 ft[sup 2] area. 16 figs, 1 tab, 15 refs.

  12. CdS/PbSe heterojunction for high temperature mid-infrared photovoltaic detector applications

    SciTech Connect (OSTI)

    Weng, Binbin E-mail: shi@ou.edu; Qiu, Jijun; Zhao, Lihua; Chang, Caleb; Shi, Zhisheng E-mail: shi@ou.edu

    2014-03-24

    n-CdS/p-PbSe heterojunction is investigated. A thin CdS film is deposited by chemical bath deposition on top of epitaxial PbSe film by molecular beam epitaxy on Silicon. Current-voltage measurements demonstrate very good junction characteristics with rectifying ratio of ∼178 and ideality factor of 1.79 at 300 K. Detectors made with such structure exhibit mid-infrared spectral photoresponse at room temperature. The peak responsivity R{sub λ} and specific detectivity D{sup *} are 0.055 A/W and 5.482 × 10{sup 8} cm·Hz{sup 1/2}/W at λ = 4.7 μm under zero-bias photovoltaic mode. Temperature-dependent photoresponse measurements show abnormal intensity variation below ∼200 K. Possible reasons for this phenomenon are also discussed.

  13. Photoluminescence studies of type-II CdSe/CdTe superlattices

    SciTech Connect (OSTI)

    Li Jingjing; Johnson, Shane R.; Wang Shumin; Ding Ding; Ning Cunzheng; Zhang Yonghang; Yin Leijun; Skromme, B. J.; Liu Xinyu; Furdyna, Jacek K.

    2012-08-06

    CdSe/CdTe type-II superlattices grown on GaSb substrates by molecular beam epitaxy are studied using time-resolved and steady-state photoluminescence (PL) spectroscopy at 10 K. The relatively long carrier lifetime of 188 ns observed in time-resolved PL measurements shows good material quality. The steady-state PL peak position exhibits a blue shift with increasing excess carrier concentration. Self-consistent solutions of the Schroedinger and Poisson equations show that this effect can be explained by band bending as a result of the spatial separation of electrons and holes, which is critical confirmation of a strong type-II band edge alignment between CdSe and CdTe.

  14. Isothermal kinetic of phase transformation and mixed electrical conductivity in Bi{sub 3}NbO{sub 7}

    SciTech Connect (OSTI)

    Wang, X.P.; Corbel, G.; Kodjikian, S.; Fang, Q.F.; Lacorre, P. . E-mail: Philippe.Lacorre@univ-lemans.fr

    2006-11-15

    Bismuth niobate (Bi{sub 3}NbO{sub 7}) exists under two crystallographic modifications, a tetragonal (type-III) phase between 800 and 900 deg. C, and a pseudocubic (type-II) phase above and below this thermal range. The quenching at room temperature of pseudocubic type-II phase made it possible to carry out a detailed study of the transformation kinetics of this metastable type-II phase to the stable type-III phase, using isothermal in situ X-ray diffraction. The obtained Avrami exponent and activation energy for the transition are around 2.5 and 3.25 eV, respectively. The value of the Avrami exponent is consistent with a three-dimensional diffusion-controlled transformation with constant nucleation rate. Investigations of electrical properties using AC impedance spectroscopy and Wagner polarization method show that the tetragonal phase exhibits higher ionic and electronic conductivities than those of the pseudocubic form. Such a deviation is likely to originate from different distributions of cations/electronic-lone-pairs and oxygen vacancies. - Graphical abstract: The metastable type-II form of Bi{sub 3}NbO{sub 7}, whose phase transformation kinetics to type-III form is studied in isothermal conditions, is shown to have a larger volume and a lower anionic (and electronic) conductivity than the type-III form of thisorite-type bismuth niobate.

  15. Effect of Gd and Zr co-substitution on multiferroic properties of BiFeO{sub 3}

    SciTech Connect (OSTI)

    Arora, Manisha Sati, Prakash Chandra Kumar, Manoj

    2014-04-24

    Single phase Bi{sub 1−x}Gd{sub x}Fe{sub 1−y}Zr{sub y}O{sub 3} (x=0.06;y=0, x= 0.10, y=0 and x=0.10,y= 0.03) nanoparticles were prepared to study the combined effect of Gd and Zr substitution on structural, magnetic and optical properties of BiFeO3. Rietveld refinement of X-ray diffraction patterns predicted that sample with x=0.06, y=0 was indexed to rhombohedral structure while samples with x=0.10, y=0 and x=0.10, y=0.03 were crystallized in multiphase (rhombohedral + orthorhombic). Magnetic properties were significantly enhanced with increasing concentration of Gd ions, however, magnetization reduced slightly with addition of 3% Zr ions in the system. Electron spin Resonance analysis indicated that breaking of spin cycloid is the main reason for enhancement of magnetization. Optical properties were investigated and direct band gap was found for all the samples.

  16. Fabrication and Spark plasma sintering of nanostructured bismuth telluride (Bi{sub 2}Te{sub 3})

    SciTech Connect (OSTI)

    Saleemi, Mohsin; Toprak, Muhammet S.; Li, Shanghua; Johnsson, Mats; Muhammed, Mamoun

    2012-06-26

    Thermoelectric (TE) devices can harvest residual low-grade waste heat energy. Bismuth telluride (Bi{sub 2}Te{sub 3}) and its alloys are mostly used TE materials in the bulk form for making TE modules. We report a simple, fast and very high yield synthetic process for the bulk Bi{sub 2}Te{sub 3} nanopowders with hexagonal plate like morphology. Spark plasma sintering (SPS) process has been optimized in order to preserve nanostructure while achieving a high compaction density of the pellets. Electron microscopy analysis was used to determine the effect of SPS parameters during compaction on the grain growth. Optimal conditions for the fabricated nanopowder was determined as 673 K, 70 MPa pressure with no holding time, which resulted in average lateral grain size in the range of 165-190 nm for a compact density of 98%. About 50% reduction of thermal conductivity was observed as compared to its bulk counterparts, revealing the feasibility of suggested route in the preservation of nanostructure and enhanced phonon scattering.

  17. High frequency permeability and permittivity spectra of BiFeO{sub 3}/(CoTi)-BaM ferrite composites

    SciTech Connect (OSTI)

    Peng, Yun; Wu, Xiaohan; Li, Qifan; Yu, Ting; Feng, Zekun; Chen, Zhongyan; Su, Zhijuan; Chen, Yajie; Harris, Vincent G.

    2015-05-07

    Low magnetic loss ferrite composites consisting of Ba(CoTi){sub 1.2}Fe{sub 9.6}O{sub 19} and BiFeO{sub 3} (BFO) ferrite were investigated for permeability, permittivity, and high frequency losses at 10 MHz1?GHz. The phase fraction of BiFeO{sub 3} was quantitatively analyzed by X-ray diffraction measurements. An effective medium approach was employed to predict the effective permeability and permittivity for the ferrite composites, which was found to be in good agreement with experimental data. The experiment demonstrated low magnetic losses (<0.128), modified by BFO phase fraction, while retaining high permeability (?10.86) at 300?MHz. More importantly, the BFO phase resulted in a reduction of magnetic loss by 32%, as BFO phase increased from 2.7 vol.?% to 12.6 vol.?%. The effect of BFO phase on magnetic and dielectric properties revealed great potential for use in the miniaturization of high efficiency antennas.

  18. Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs{sub 1?x}Bi{sub x} epilayers

    SciTech Connect (OSTI)

    Luna, E. Wu, M.; Trampert, A.; Puustinen, J.; Guina, M.

    2015-05-14

    We report on the spontaneous formation of lateral composition modulations (LCMs) in Ga(As,Bi) epilayers grown by low-temperature (<300?C) molecular beam epitaxy (MBE) on GaAs(001). Both cross-section and plan-view transmission electron microscopy techniques are used to investigate the nature of the LCMs, consisting of Bi-rich cylinder-like nanostructures lying along the [001] growth direction. The observed LCMs are the consequence of a two-dimensional phase separation process occurring at the surface of the growing epilayers, and their columnar nature is consistent with a surface-directed spinodal decomposition process. Although LCMs are thermodynamically driven, we show how they can be kinetically controlled, in particular, through the As/Ga flux ratio and the substrate temperature. This is a result of LCMs developing from surface atomic diffusion processes, since the atomic dimer configurations on the surface alter adatom diffusivity. The significant role of the surface reconstructions is also discussed.

  19. Radiative lifetimes of zincblende CdSe/CdS quantum dots

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gong, Ke; Martin, James E.; Shea-Rohwer, Lauren E.; Lu, Ping; Kelley, David F.

    2015-01-02

    Recent synthetic advances have made available very monodisperse zincblende CdSe/CdS quantum dots having near-unity photoluminescence quantum yields. Because of the absence of nonradiative decay pathways, accurate values of the radiative lifetimes can be obtained from time-resolved PL measurements. Radiative lifetimes can also be obtained from the Einstein relations, using the static absorption spectra and the relative thermal populations in the angular momentum sublevels. We found that one of the inputs into these calculations is the shell thickness, and it is useful to be able to determine shell thickness from spectroscopic measurements. We use an empirically corrected effective mass model tomore » produce a “map” of exciton wavelength as a function of core size and shell thickness. These calculations use an elastic continuum model and the known lattice and elastic constants to include the effect of lattice strain on the band gap energy. The map is in agreement with the known CdSe sizing curve and with the shell thicknesses of zincblende core/shell particles obtained from TEM images. Furthermore, if selenium–sulfur diffusion is included and lattice strain is omitted from the calculation then the resulting map is appropriate for wurtzite CdSe/CdS quantum dots synthesized at high temperatures, and this map is very similar to one previously reported (J. Am. Chem. Soc. 2009, 131, 14299). Radiative lifetimes determined from time-resolved measurements are compared to values obtained from the Einstein relations, and found to be in excellent agreement. For a specific core size (2.64 nm diameter, in the present case), radiative lifetimes are found to decrease with increasing shell thickness. Thus, this is similar to the size dependence of one-component CdSe quantum dots and in contrast to the size dependence in type-II quantum dots.« less

  20. Radiative lifetimes of zincblende CdSe/CdS quantum dots

    SciTech Connect (OSTI)

    Gong, Ke; Martin, James E.; Shea-Rohwer, Lauren E.; Lu, Ping; Kelley, David F.

    2015-01-02

    Recent synthetic advances have made available very monodisperse zincblende CdSe/CdS quantum dots having near-unity photoluminescence quantum yields. Because of the absence of nonradiative decay pathways, accurate values of the radiative lifetimes can be obtained from time-resolved PL measurements. Radiative lifetimes can also be obtained from the Einstein relations, using the static absorption spectra and the relative thermal populations in the angular momentum sublevels. We found that one of the inputs into these calculations is the shell thickness, and it is useful to be able to determine shell thickness from spectroscopic measurements. We use an empirically corrected effective mass model to produce a “map” of exciton wavelength as a function of core size and shell thickness. These calculations use an elastic continuum model and the known lattice and elastic constants to include the effect of lattice strain on the band gap energy. The map is in agreement with the known CdSe sizing curve and with the shell thicknesses of zincblende core/shell particles obtained from TEM images. Furthermore, if selenium–sulfur diffusion is included and lattice strain is omitted from the calculation then the resulting map is appropriate for wurtzite CdSe/CdS quantum dots synthesized at high temperatures, and this map is very similar to one previously reported (J. Am. Chem. Soc. 2009, 131, 14299). Radiative lifetimes determined from time-resolved measurements are compared to values obtained from the Einstein relations, and found to be in excellent agreement. For a specific core size (2.64 nm diameter, in the present case), radiative lifetimes are found to decrease with increasing shell thickness. Thus, this is similar to the size dependence of one-component CdSe quantum dots and in contrast to the size dependence in type-II quantum dots.

  1. Investigation of Fe:ZnSe laser in pulsed and repetitively pulsed regimes

    SciTech Connect (OSTI)

    Velikanov, S D; Zaretskiy, N A; Zotov, E A; Maneshkin, A A; Chuvatkin, R S; Yutkin, I M; Kozlovsky, V I; Korostelin, Yu V; Krokhin, O N; Podmar'kov, Yu P; Savinova, S A; Skasyrsky, Ya K; Frolov, M P

    2015-01-31

    The characteristics of a Fe:ZnSe laser pumped by a single-pulse free-running Er : YAG laser and a repetitively pulsed HF laser are presented. An output energy of 4.9 J is achieved in the case of liquid-nitrogen cooling of the Fe{sup 2+}:ZnSe active laser element longitudinally pumped by an Er:YAG laser with a pulse duration of 1 ms and an energy up to 15 J. The laser efficiency with respect to the absorbed energy is 47%. The output pulse energy at room temperature is 53 mJ. The decrease in the output energy is explained by a strong temperature dependence of the upper laser level lifetime and by pulsed heating of the active element. The temperature dependence of the upper laser level lifetime is used to determine the pump parameters needed to achieve high pulse energies at room temperature. Stable repetitively-pulsed operation of the Fe{sup 2+}:ZnSe laser at room temperature with an average power of 2.4 W and a maximum pulse energy of 14 mJ is achieved upon pumping by a 1-s train of 100-ns HF laser pulses with a repetition rate of 200 Hz. (lasers)

  2. Cr-doped TiSe2 - A layered dichalcogenide spin glass

    SciTech Connect (OSTI)

    Luo, Huixia; Tao, Jing; Krizan, Jason W.; Seibel, Elizabeth M.; Xie, Weiwei; Sahasrabudhe, Girija S.; Bergman, Susanna L.; Phelan, Brendan F.; Wang, Zhen; Zhang, Jiandi; Cava, R. J.

    2015-09-17

    We report the magnetic characterization of the Cr-doped layered dichalcogenide TiSe2. The temperature dependent magnetic susceptibilities are typical of those seen in geometrically frustrated insulating antiferromagnets. The Cr moment is close to the spin-only value, and the Curie–Weiss temperatures (θcw) are between –90 and –230 K. Freezing of the spin system, which is glassy, characterized by peaks in the ac and dc susceptibility and specific heat, does not occur until below T/θcw = 0.05. The CDW transition seen in the resistivity for pure TiSe2 is still present for 3% Cr substitution but is absent by 10% substitution, above which the materials are metallic and p-type. Structural refinements, magnetic characterization, and chemical considerations indicate that the materials are of the type Ti1–xCrxSe2-x/2 for 0 ≤ x ≤ 0.6.

  3. Blue and green electroluminescence from CdSe nanocrystal quantum-dot-quantum-wells

    SciTech Connect (OSTI)

    Lu, Y. F.; Cao, X. A.

    2014-11-17

    CdS/CdSe/ZnS quantum dot quantum well (QDQW) nanocrystals were synthesized using the successive ion layer adsorption and reaction technique, and their optical properties were tuned by bandgap and strain engineering. 3-monolayer (ML) CdSe QWs emitted blue photoluminescence at 467?nm with a spectral full-width-at-half-maximum of ?30?nm. With a 3 ML ZnS cladding layer, which also acts as a passivating and strain-compensating layer, the QDQWs acquired a ?35% quantum yield of the QW emission. Blue and green electroluminescence (EL) was obtained from QDQW light-emitting devices with 34.5 ML CdSe QWs. It was found that as the peak blueshifted, the overall EL was increasingly dominated by defect state emission due to poor hole injection into the QDQWs. The weak EL was also attributed to strong field-induced charge separation resulting from the unique QDQW geometry, weakening the oscillator strength of optical transitions.

  4. Photoinduced Surface Oxidation and Its Effect on the Exciton Dynamics of CdSe Quantum Dots

    SciTech Connect (OSTI)

    Hines, Douglas A.; Becker, Matthew A.; Kamat, Prashant V.

    2012-11-14

    With increased interest in semiconductor nanoparticles for use in quantum dot solar cells there comes a need to understand the long-term photostability of such materials. Colloidal CdSe quantum dots (QDs) were suspended in toluene and stored in combinations of light/dark and N{sub 2}/O{sub 2} to simulate four possible benchtop storage environments. CdSe QDs stored in a dark, oxygen-free environment were observed to better retain their optical properties over the course of 90 days. The excited state lifetimes, determined through femtosecond transient absorption spectroscopy, of air-equilibrated samples exposed to light exhibit a decrease in average lifetime (0.81 ns) when compared to samples stored in a nitrogen/dark environment (8.3 ns). A photoetching technique commonly used for controlled reduction of QD size was found to induce energetic trap states to CdSe QDs and accelerate the rate of electron-hole recombination. X-ray absorption near edge structure (XANES) analysis confirms surface oxidation, the extent of which is shown to be dependent on the thickness of the ligand shell.

  5. Cr-doped TiSe2 - A layered dichalcogenide spin glass

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Luo, Huixia; Tao, Jing; Krizan, Jason W.; Seibel, Elizabeth M.; Xie, Weiwei; Sahasrabudhe, Girija S.; Bergman, Susanna L.; Phelan, Brendan F.; Wang, Zhen; Zhang, Jiandi; et al

    2015-09-17

    We report the magnetic characterization of the Cr-doped layered dichalcogenide TiSe2. The temperature dependent magnetic susceptibilities are typical of those seen in geometrically frustrated insulating antiferromagnets. The Cr moment is close to the spin-only value, and the Curie–Weiss temperatures (θcw) are between –90 and –230 K. Freezing of the spin system, which is glassy, characterized by peaks in the ac and dc susceptibility and specific heat, does not occur until below T/θcw = 0.05. The CDW transition seen in the resistivity for pure TiSe2 is still present for 3% Cr substitution but is absent by 10% substitution, above which themore » materials are metallic and p-type. Structural refinements, magnetic characterization, and chemical considerations indicate that the materials are of the type Ti1–xCrxSe2-x/2 for 0 ≤ x ≤ 0.6.« less

  6. Novel thin-film CuInSe sub 2 fabrication

    SciTech Connect (OSTI)

    Mooney, G.D.; Hermann, A.M. )

    1992-03-01

    This report describes research in Rapid Thermal Processing (RTP), a process that allows the formation of CuInSe{sub 2} without the use of H{sub 2}Se. RTP is a well-established method of rapidly achieving temperatures necessary to melt and recrystallize materials such as Si and and silicides. RTP processes can rapidly and uniformly heat large surface areas to hundreds of degrees Celsius. RTP is the most promising method of rapid recrystallization studied to date, being readily scalable from the research to the production level. The approach to the experiment was divided into two sections: (1) fabricating the precursor film and (2) processing the precursor film. The objective of the first phase of the work was to fabricate the thin films by RTP, then fully characterize them, to demonstrate the viability of the process as a method by which to make device-quality CuInSe{sub 2}. The second phase was to demonstrate that material made by this method could be used to make an active photovoltaic device. 24 refs.

  7. High Compositional Homogeneity of CdTexSe1-x Crystals Grown by the Bridgman Method

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Hossain, A.; Lee, K.; Lee, W.; Tappero, R.; Yang, G.; Gul, R.; et al

    2015-02-03

    We obtained high-quality CdTexSe1-x (CdTeSe) crystals from ingots grown by the vertical Bridgman technique. The compositional uniformity of the ingots was evaluated by X-ray fluorescence at BNL’s National Synchrotron Light Source X27A beam line. The resulting compositional homogeneity was highly uniform throughout the ingot, and the effective segregation coefficient of Se was ~1.0. This uniformity offers potential opportunity to enhance the yield of the materials for both infrared substrate and radiation-detector applications, so greatly lowering the cost of production and also offering us the prospect to grow large-diameter ingots for use as large-area substrates and for producing higher efficiency gamma-raymore » detectors. The concentration of secondary phases was found to be much lower, by eight- to ten fold compared to that of conventional CdxZn1-xTe (CdZnTe or CZT).« less

  8. Field-dependent magnetization of BiFeO3 in ultrathin La0.7Sr0.3MnO3/BiFeO3 superlattice

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Fitzsimmons, Michael R.; Jia, Quanxi X.; Singh, Surendra; Chen, A. P.; Xiong, J.

    2015-12-02

    We report the observation of field-induced magnetization of BiFeO3 (BFO) in an ultrathin La0.7Sr0.3MnO3 (LSMO)/BFO superlattice using polarized neutron reflectivity (PNR). The depth dependent structure and magnetic characterization of subnano layer thick (thickness ~ 0.7 nm each) LSMO/BFO hetrostructure is carried out using X-ray reflectivity and PNR techniques. Our PNR results indicate parallel alignment of magnetization as well as enhancement in magnetic moment across LSMO/BFO interfaces. The study showed an increase in average magnetization on increasing applied magnetic field at 10K. As a result, we observed a saturation magnetization of 110 ± 15 kA/m (~0.8 μB/Fe) for ultrathin BFO layermore » (~2 unit cell) sandwiched between ultrathin LSMO layers (~ 2 unit cell).« less

  9. X-ray irradiation induced changes in electron transport in stabilized a-Se photoconductors

    SciTech Connect (OSTI)

    Walornyj, M.; Kasap, S. O.

    2013-12-07

    We have examined the effect of high-dose x-ray irradiation on electron transport in stabilized amorphous selenium (a-Se) x-ray photoconductive films (of the type used in x-ray image detectors) by measuring the electron lifetime ?{sub e} through interrupted-field time-of-flight experiments. X-ray induced effects have been examined through two types of experiments. In recovery experiments, the a-Se was preirradiated with and without an applied field (5 V/?m) during irradiation with sufficient dose (typically ?20 Gy at 21 C) to significantly reduce the electron lifetime by ?50%, and then the recovery of the lifetime was monitored as a function of time at three different temperatures, 10 C, 21 C, and 35 C. The lifetime recovery kinetics was exponential with a relaxation time ?{sub r} that is thermally activated with an activation energy of 1.66 eV. ?{sub r} is a few hours at 21 C and only a few minutes at 35 C. In experiments examining the irradiation induced effects, the a-Se film was repeatedly exposed to x-ray radiation and the changes in the drift mobility and lifetime were monitored as a function of accumulated dose D. There was no observable change in the drift mobility. At 21 C, the concentration of x-ray induced deep traps (or capture centers), N{sub d}, increases linearly with D (N{sub d} ? D) whereas at 35 C, the recovery process prevents a linear increase in N{sub d} with D, and N{sub d} saturates. In all cases, even under high dose irradiation (?50 Gy), the lifetime was recoverable to its original equilibrium (pre-exposure) value within a few relaxation times.

  10. Effects of the solvent on the structure, morphology and photocatalytic properties of Bi{sub 2}MoO{sub 6} in the solvothermal process

    SciTech Connect (OSTI)

    Bi, Jinhong; Che, Jiangang; Wu, Ling; Liu, Minghua

    2013-06-01

    Graphical abstract: Various nanostructure Bi{sub 2}MoO{sub 6} photocatalysts have been prepared by a solvothermal process via simply altering the used solvent. It is revealed that the type of solvents has a strong influence on the morphology of Bi{sub 2}MoO{sub 6}. This could be understood in terms of the reaction media effect on the crystal growth. The photocatalytic experiments for the decomposition of RhB demonstrate that the samples prepared by different solvents show different photocatalytic activity. The highest photocatalytic activity is obtained by the sample with glycol as solvent. Highlights: ? The used solvent in the synthesis can affect the morphology and size of Bi{sub 2}MoO{sub 6}. ? Different solvent in the reaction leads to different surface area and pore size. ? The highest photocatalytic activity is obtained by the sample prepared in glycol. ? The high activity is mainly due to the large surface area and small particle size. - Abstract: Visible-light-driven photocatalyst Bi{sub 2}MoO{sub 6} was prepared by a solvothermal process with different kinds of solvent including water, isopropanol and ethylene glycol. The obtained samples were characterized by X-ray diffraction technique, N{sub 2}-sorption, UVvis diffuse reflectance spectra, transmission electron microscopy and Fourier transform infrared spectroscopy. The results revealed that the type of solvent has a strong influence on the morphologies and physico-chemical properties of Bi{sub 2}MoO{sub 6}. Meanwhile, the formation mechanism of Bi{sub 2}MoO{sub 6} with various morphologies was discussed. The photocatalytic activities of Bi{sub 2}MoO{sub 6} photocatalysts were evaluated by the decomposition of rhodamine B (RhB) under visible light irradiation (? > 420 nm). It was found that the sample prepared with glycol as solvent showed the best performance in the photodegradation of RhB under visible light irradiation. This could be ascribed to the large surface area, unique morphology and small particle size.

  11. Microsized structures assisted nanostructure formation on ZnSe wafer by femtosecond laser irradiation

    SciTech Connect (OSTI)

    Wang, Shutong; Feng, Guoying E-mail: zhoush@scu.edu.cn

    2014-12-22

    Micro/nano patterning of ZnSe wafer is demonstrated by femtosecond laser irradiation through a diffracting pinhole. The irradiation results obtained at fluences above the ablation threshold are characterized by scanning electron microscopy. The microsized structure with low spatial frequency has a good agreement with Fresnel diffraction theory. Laser induced periodic surface structures and laser-induced periodic curvelet surface structures with high spatial frequency have been found on the surfaces of microsized structures, such as spikes and valleys. We interpret its formation in terms of the interference between the reflected laser field on the surface of the valley and the incident laser pulse.

  12. Determination of the Exciton Binding Energy in CdSe Quantum Dots

    SciTech Connect (OSTI)

    Meulenberg, R; Lee, J; Wolcott, A; Zhang, J; Terminello, L; van Buuren, T

    2009-10-27

    The exciton binding energy (EBE) in CdSe quantum dots (QDs) has been determined using x-ray spectroscopy. Using x-ray absorption and photoemission spectroscopy, the conduction band (CB) and valence band (VB) edge shifts as a function of particle size have been determined and combined to obtain the true band gap of the QDs (i.e. without and exciton). These values can be compared to the excitonic gap obtained using optical spectroscopy to determine the EBE. The experimental EBE results are compared with theoretical calculations on the EBE and show excellent agreement.

  13. Multiband semimetallic electronic structure of superconducting Ta2PdSe5

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Singh, David Joseph

    2015-04-24

    We report the electronic structure and related properties of the superconductor Ta2PdSe5 as determined from density functional calculations. The Fermi surface has two disconnected sheets, both derived from bands of primarily chalcogenide p states. These are a corrugated hole cylinder and a heavier complex shaped electron sheet. The sheets contain 0.048 holes and a compensating number of electrons per formula unit, making the material a semimetallic superconductor. The results support the presence of two band superconductivity, although a discrepancy in the specific heat is noted. This discrepancy is discussed as a possible consequence of Pd deficiency in samples.

  14. ScanningTunneling Luminescence of Grain Boundaries in Cu(In,Ga)Se2

    SciTech Connect (OSTI)

    Romero, M. J.; Jiang, C.-S.; Al-Jassim, M. M.; Noufi, R.

    2005-01-01

    At the Laboratory, photon emission in semiconductors has been mapped in the nanoscale using scanning tunneling microscopy (STM). In this Solar Program Review Meeting, we report on the latest results obtained in Cu(In,Ga)Se2 (CIGS) thin films by this adapted STM. Scanning tunneling luminescence (STL) spectroscopy suggests that photons are emitted near the surface of CIGS. STL is excited either by (1) diffusion of tunneling electrons and subsequent recombination with available holes in CIGS or (2) impact ionization by hot electrons. Which process becomes predominant depends on the voltage applied to the STM tip. Photon mapping shows electronically active, extended defects near the surface of CIGS thin films.

  15. PdBI cold dust imaging of two extremely red H [4.5] > 4 galaxies discovered with SEDS and CANDELS

    SciTech Connect (OSTI)

    Caputi, K. I.; Popping, G.; Spaans, M.; Micha?owski, M. J.; Dunlop, J. S.; Krips, M.; Geach, J. E.; Ashby, M. L. N.; Huang, J.-S.; Fazio, G. G.; Koekemoer, A. M.; Castellano, M.; Fontana, A.; Santini, P.

    2014-06-20

    We report Plateau de Bure Interferometer (PdBI) 1.1 mm continuum imaging toward two extremely red H [4.5] > 4 (AB) galaxies at z > 3, which we have previously discovered making use of Spitzer SEDS and Hubble Space Telescope CANDELS ultra-deep images of the Ultra Deep Survey field. One of our objects is detected on the PdBI map with a 4.3? significance, corresponding to S{sub ?}(1.1 mm)=0.780.18 mJy. By combining this detection with the Spitzer 8 and 24 ?m photometry for this source, and SCUBA2 flux density upper limits, we infer that this galaxy is a composite active galactic nucleus/star-forming system. The infrared (IR)-derived star formation rate is SFR ? 200 100 M {sub ?} yr{sup 1}, which implies that this galaxy is a higher-redshift analogue of the ordinary ultra-luminous infrared galaxies more commonly found at z ? 2-3. In the field of the other target, we find a tentative 3.1? detection on the PdBI 1.1 mm map, but 3.7 arcsec away of our target position, so it likely corresponds to a different object. In spite of the lower significance, the PdBI detection is supported by a close SCUBA2 3.3? detection. No counterpart is found on either the deep SEDS or CANDELS maps, so, if real, the PdBI source could be similar in nature to the submillimeter source GN10. We conclude that the analysis of ultra-deep near- and mid-IR images offers an efficient, alternative route to discover new sites of powerful star formation activity at high redshifts.

  16. (Bi, Pb){sub 2}Sr{sub 2}Ca{sub 2}Cu{sub 3}O{sub x} superconductor and method of making same utilizing sinter-forging

    DOE Patents [OSTI]

    Chen, N.; Goretta, K.C.; Lanagan, M.T.

    1998-10-13

    A (BiPb){sub 2}Sr{sub 2}Ca{sub 2}Cu{sub 3}O{sub x}(Bi223) superconductor with high J{sub c}, phase purity, density and mechanical strength is formed from Bi2223 powder which is synthesized from a mixture of Bi{sub 2}O{sub 3}, PbO, SrCO{sub 3}, CaCo{sub 3} and CuO. The mixture is milled, then dried and calcined to synthesize the Bi2223 powder with the desired phase purity. The calcination is performed by heating the dried mixture for 50 hours at 840 C. The partially synthesized powder is then milled for 1--4 hours before calcining further for another 50 hours at 855 C to complete the synthesis. After calcination, the Bi2223 powder is cold pressed to a predetermined density and sinter forged under controlled temperature and time to form a Bi2223 superconductor with the desired superconducting properties. 5 figs.

  17. (Bi, Pb).sub.2, Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.x superconductor and method of making same utilizing sinter-forging

    DOE Patents [OSTI]

    Chen, Nan; Goretta, Kenneth C.; Lanagan, Michael T.

    1998-01-01

    A (BiPb).sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.x (Bi223) superconductor with high J.sub.c, phase purity, density and mechanical strength is formed from Bi2223 powder which is synthesized from a mixture of Bi.sub.2 O.sub.3, PbO, SrCO.sub.3, CaCo.sub.3 and CuO. The mixture is milled, then dried and calcined to synthesize the Bi2223 powder with the desired phase purity. The calcination is performed by heating the dried mixture for 50 hours at 840.degree. C. The partially synthesized powder is then milled for 1-4 hours before calcining further for another 50 hours at 855.degree. C. to complete the synthesis. After calcination, the Bi2223 powder is cold pressed to a predetermined density and sinter forged under controlled temperature and time to form a Bi2223 superconductor with the desired superconducting properties.

  18. Local-moment magnetism in superconducting FeTe0.35Se0.65 as seen...

    Office of Scientific and Technical Information (OSTI)

    Local-moment magnetism in superconducting FeTe0.35Se0.65 as seen via inelastic neutron scattering Prev Next Title: Local-moment magnetism in superconducting FeTe0.35Se0.65 as ...

  19. Synthesis of monodispersed CdSe nanocrystals in poly(styrene-alt-maleic anhydride) at room temperature

    SciTech Connect (OSTI)

    Liu, S.H.; Qian, X.F.; Yuan, J.Y.; Yin, J.; He, R.; Zhu, Z.K

    2003-07-14

    Nanocomposite of CdSe/poly(styrene-alt-maleic anhydride) (PSM) was successfully prepared via an in situ reaction process at room temperature and ambient pressure. Transmission electron microscopy (TEM) analysis revealed that CdSe nanoparticles with a small size and narrow size distribution were obtained. The obtained nanocomposite was also characterized by FT-IR, XRD, ultraviolet-visible, and fluorescence spectroscopy.

  20. Preliminary safety analysis of Pb-Bi cooled 800 MWt modified CANDLE burn-up scheme based fast reactors

    SciTech Connect (OSTI)

    Su'ud, Zaki; Sekimoto, H.

    2014-09-30

    Pb-Bi Cooled fast reactors with modified CANDLE burn-up scheme with 10 regions and 10 years cycle length has been investigated from neutronic aspects. In this study the safety aspect of such reactors have been investigated and discussed. Several condition of unprotected loss of flow (ULOF) and unprotected rod run-out transient over power (UTOP) have been simulated and the results show that the reactors excellent safety performance. At 80 seconds after unprotected loss of flow condition, the core flow rate drop to about 25% of its initial flow and slowly move toward its natural circulation level. The maximum fuel temperature can be managed below 1000°C and the maximum cladding temperature can be managed below 700°C. The dominant reactivity feedback is radial core expansion and Doppler effect, followed by coolant density effect and fuel axial expansion effect.

  1. Reduced leakage in epitaxial BiFeO{sub 3} films following oxygen radio frequency plasma treatment

    SciTech Connect (OSTI)

    Kothari, Deepti [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India) [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India); UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452 017 (India); Upadhyay, Sanjay K.; Raghavendra Reddy, V. [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452 017 (India)] [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452 017 (India); Jariwala, C.; Raole, P. M. [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India)] [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India)

    2013-06-07

    Epitaxial BiFeO{sub 3} (BFO) films were deposited using pulsed laser deposition method. The prepared films were characterized using x-ray diffraction, x-ray reflectivity, ferroelectric loop tracer, and leakage current measurements before and after oxygen plasma treatment. The leakage current of the films, a crucial parameter in device applications, is observed to be reduced by two orders of magnitude with oxygen plasma treatment at room temperature. P-E hysteresis loops were observed in oxygen plasma treated BFO films. The observed results indicate the usefulness of oxygen radio frequency plasma treatment (RF 13.56 MHz), which is an effective and low temperature processing technique, in such lossy ferroelectric thin films.

  2. Focused-ion-beam induced damage in thin films of complex oxide BiFeO{sub 3}

    SciTech Connect (OSTI)

    Siemons, W.; Beekman, C.; Budai, J. D.; Christen, H. M.; Fowlkes, J. D.; Balke, N.; Tischler, J. Z.; Xu, R.; Liu, W.; Gonzales, C. M.

    2014-02-01

    An unexpected, strong deterioration of crystal quality is observed in epitaxial perovskite BiFeO{sub 3} films in which microscale features have been patterned by focused-ion-beam (FIB) milling. Specifically, synchrotron x-ray microdiffraction shows that the damaged region extends to tens of ?m, but does not result in measureable changes to morphology or stoichiometry. Therefore, this change would go undetected with standard laboratory equipment, but can significantly influence local material properties and must be taken into account when using a FIB to manufacture nanostructures. The damage is significantly reduced when a thin metallic layer is present on top of the film during the milling process, clearly indicating that the reduced crystallinity is caused by ion beam induced charging.

  3. Ionic liquid assisted microwave synthesis route towards color-tunable luminescence of lanthanide- doped BiPO4

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Cybinska, Joanna; Lorbeer, Chantal; Mudring, Anja -Verena

    2015-07-08

    Ln3+-doped (Ln=Sm, Eu, Tb, Dy) nanoparticles of BiPO4 with a particle size below 10 nm were synthesized in a straightforward manner from the appropriate mixture of the respective metal acetates and the task-specific ionic liquids choline or butylammonium dihydrogen-phosphate by conversion in a laboratory microwave (120 °C, 10 min). The ionic liquid acts not only as a solvent and microwave susceptor, but also as the reaction partner and nanoparticle stabilizer. The materials were thoroughly characterized not only with respect to their optical properties but also by PXRD, FT-IR, TEM techniques. Furthermore, depending on the lanthanide, the nanomaterial shows intense luminescencemore » of different colors such as: orange (Sm3+), red (Eu3+), green (Tb3+) or even white (Dy3+).« less

  4. High pressures and the Kondo gap in Ce{sub 3}Bi{sub 4}Pt{sub 3}

    SciTech Connect (OSTI)

    Cooley, J.C.; Aronson, M.C.; Canfield, P.C.

    1997-03-01

    We have measured the electrical resistivity {rho}(T) of single crystals of Ce{sub 3}Bi{sub 4}Pt{sub 3} for temperatures from 1.2 to 300 K, and pressures from 1 bar to 145 kbar. The transport is dominated at high temperatures by excitations across a small activation gap {Delta}, which increases rapidly with pressure. The low-temperature transport involves variable range hopping among extrinsic states in the gap. The spatial extent of the in-gap states reflects coupling to conduction-electron states, and is strongly modified as pressure enhances {Delta}. Despite the strong pressure dependence of {Delta}, a direct correspondence between single-ion energetics and the measured gap is maintained, and the role of valence fluctuations is minimal even at the highest pressures. {copyright} {ital 1997} {ital The American Physical Society}

  5. Lightweight PV Inverters: Dual Bi-Directional IGBTs Modules Enables Breakthrough PV Inverter Using Current Modulation Topology

    SciTech Connect (OSTI)

    2012-01-30

    Solar ADEPT Project: PV inverters convert DC power generated by modules into usable AC power. IPCs initial 30kW 94lb. PV inverter reduces the weight of comparable 30kW PV inverters by 90%reducing the cost of materials, manufacturing, shipping, and installation. With ARPA-E support, new bi-directional silicon power switches will be developed, commercialized, and utilized in IPCs next-generation PV inverter. With these components, IPC will produce 100kW inverters that weight less than 100lb., reducing the weight of conventional 3,000lb. 100kW inverters by more than 95%. The new power switches will cut IPCs $/W manufacturing cost in half, as well as further reduce indirect shipping and installation costs.

  6. Optical diode effect at spin-wave excitations in the room-temperature multiferroic BiFeO3.

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kezsmarki, I.; Nagel, U.; Bordacs, S.; Fishman, Randy Scott; Lee, Jun Hee; Yi, Hee Taek; Cheong, Sang-Wook; Room, T.

    2015-09-15

    The ability to read and write a magnetic state current-free by an electric voltage would provide a huge technological advantage. Dynamic or optical ME effects are equally interesting, because they give rise to unidirectional light propagation as recently observed in low-temperature multiferroics. This phenomenon, if realized at room temperature, would allow the development of optical diodes which transmit unpolarized light in one, but not in the opposite, direction. Here, we report strong unidirectional transmission in the room-temperature multiferroic BiFeO3 over the gigahertz-terahertz frequency range. The supporting theory attributes the observed unidirectional transmission to the spin-current-driven dynamic ME effect. Our findingsmore » are an important step toward the realization of optical diodes, supplemented by the ability to switch the transmission direction with a magnetic or electric field.« less

  7. Tensile Strain Switched Ferromagnetism in Layered NbS2 and NbSe2

    SciTech Connect (OSTI)

    Zhou, Yungang; Wang, Zhiguo; Yang, Ping; Zu, Xiaotao; Yang, Li; Sun, Xin; Gao, Fei

    2012-11-01

    Developing approaches to effectively induce and control the magnetic states is critical to the use of magnetic nanostructures in quantum information devices but is still challenging. Here we have demonstrated, by employing the density functional theory calculations, an existence of infinite magnetic sheets with structural integrity and magnetic homogeneity. Examination from a series of transition metal dichalcogenides shows that the biaxial tensile strained NbS2 and NbSe2 structures can be magnetized with a ferromagnetic character due to the competitive effects of through-bond interaction and through-space interaction. The estimated Curie temperatures (387 and 542 K under the 10% strain for NbS2 and NbSe2 structures, respectively) suggest that the unique ferromagnetic character can be achieved above room temperature. The self-exchange of population between 4d orbitals of Nb atom that leads to the exchange splitting is the mechanism behind the transition of the spin moment. The induced magnetic moments can be significantly enhanced by the tensile strain, even giving rise to half-metallic character with the strong spin polarization around the Fermi level. Given the recent progress that the desired strain can be achieved on two-dimensional nanostructures, such as graphene and BN layer in a controlled way, we believe that our calculated results are suitable for experimental verification and implementation opening a new path to explore the spintronics in pristine two-dimensional nanostructures.

  8. Resonance photoelectron spectroscopy of TiX{sub 2} (X = S, Se, Te) titanium dichalcogenides

    SciTech Connect (OSTI)

    Shkvarin, A. S. Yarmoshenko, Yu. M.; Skorikov, N. A.; Yablonskikh, M. V.; Merentsov, A. I.; Shkvarina, E. G.; Titov, A. N.

    2012-11-15

    The photoelectron valence band spectra of TiS{sub 2}, TiSe{sub 2}, and TiTe{sub 2} dichalcogenides are investigated in the Ti 2p-3d resonance regime. Resonance bands in the vicinity of the Fermi energy are found for TiS{sub 2} and TiTe{sub 2}. The nature of these bands is analyzed based on model calculations of the density of electronic states in TiS{sub 2}, TiSe{sub 2}, and TiTe{sub 2} compounds intercalated by titanium atoms. Analysis of experimental data and their comparison with model calculations showed that these bands have different origins. It is found that the resonance enhancement of an additional band observed in TiS{sub 2} is explained by self-intercalation by titanium during the synthesis of this compound. The resonance enhancement in TiTe{sub 2} is caused by occupation of the 3d band in Ti.

  9. Electronic structure of titanium dichalcogenides TiX{sub 2} (X = S, Se, Te)

    SciTech Connect (OSTI)

    Shkvarin, A. S. Yarmoshenko, Yu. M.; Skorikov, N. A.; Yablonskikh, M. V.; Merentsov, A. I.; Shkvarina, E. G.; Titov, A. N.

    2012-01-15

    The electronic structure and the chemical bond in titanium dichalcogenides TiX{sub 2} (X = S, Se, Te), which are promising electrode materials for lithium batteries, are studied experimentally and theoretically. It is found that the X-ray photoelectron spectra of the valence bands and the core levels of titanium and its X-ray L{sub 2,3} absorption spectra demonstrate a change in the ionic and covalent components of the chemical bond in these compounds. The densities of states in these compounds are calculated by the full-potential augmented-plane-wave method, and multiplet calculations of the X-ray L{sub 2,3} absorption spectra of titanium are performed. It is shown that, in the row TiS{sub 2}-TiSe{sub 2}-TiTe{sub 2}, the covalence increases, the ionicity of the chemical bond decreases, and the effect of the crystal field of a ligand is weakened.

  10. Polytypism, polymorphism, and superconductivity in TaSe2-xTex

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Luo, Huixia; Tao, Jing; Xie, Weiwei; Inoue, Hiroyuki; Gyenis, Andras; Krizan, Jason W.; Yazdani, Ali; Zhu, Yimei; Cava, R. J.

    2015-03-17

    Polymorphism in materials often leads to significantly different physical properties - the rutile and anatase polymorphs of TiO? are a prime example. Polytypism is a special type of polymorphism, occurring in layered materials when the geometry of a repeating structural layer is maintained but the layer stacking sequence of the overall crystal structure can be varied; SiC is an example of a material with many polytypes. Although polymorphs can have radically different physical properties, it is much rarer for polytypism to impact physical properties in a dramatic fashion. Here we study the effects of polytypism and polymorphism on the superconductivitymoreof TaSe?, one of the archetypal members of the large family of layered dichalcogenides. We show that it is possible to access 2 stable polytypes and 2 stable polymorphs in the TaSe2-xTex solid solution, and find that the 3R polytype shows a superconducting transition temperature that is between 6 and 17 times higher than that of the much more commonly found 2H polytype. The reason for this dramatic change is not apparent, but we propose that it arises either from a remarkable dependence of Tc on subtle differences in the characteristics of the single layers present, or from a surprising effect of the layer stacking sequence on electronic properties that instead are expected to be dominated by the properties of a single layer in materials of this kind.less

  11. The role of ligands in the optical and electronic spectra of CdSe nanoclusters

    SciTech Connect (OSTI)

    Kilina, Svletana; Sergei, Ivanov A; Victor, Klimov I; Sergei, Tretiak

    2008-01-01

    We investigate the impact of ligands on morphology, electronic structure, and optical response of the Cd33Se33 cluster, which already overlapps in size with the smallest synthesized CdSe quantum dots (QDs). Our Density Functional Theory (DFT) calculations demonstrate significant surface reorganization both for the bare cluster and for the cluster capped by amine and phosphine oxide ligand models. We observe strong surface-ligand interactions leading to substantial charge redistribution and polarization effects on the surface. This effect results in the appearance of hybridized states, where the electronic density is spread over the cluster and the ligands. Neither the ligand's nor hybridized molecular orbitals appear as trap states inside or near the band gap of the QD. Instead, being optically dark, dense hybridized states from the edges of the valence and the conduction bands could open new relaxation channels for high energy photoexcitations. Comparing quantum dots passivated by different ligands, we found that hybridized states are denser in at the edge of the conduction band of the cluster ligated with phosphine oxide molecules than that with primary amines. Such a different manifestation of ligand binding may potentially lead to the faster electron relaxation in dots passivated by phosphine oxide than by amine ligands, which is in agreement with experimental data.

  12. Electronic Structure of Ligated CdSe Clusters: Dependence on DFT Methodology

    SciTech Connect (OSTI)

    Albert, VV; Ivanov, SA; Tretiak, S; Kilina, SV

    2011-07-07

    Simulations of ligated semiconductor quantum dots (QDs) and their physical properties, such as morphologies, QD-ligand interactions, electronic structures, and optical transitions, are expected to be very sensitive to computational methodology. We utilize Density Functional Theory (DFT) and systematically study how the choice of density functional, atom-localized basis set, and a solvent affects the physical properties of the Cd{sub 33}Se{sub 33} cluster ligated with a trimethyl phosphine oxide ligand. We have found that qualitative performance of all exchange-correlation (XC) functionals is relatively similar in predicting strong QD-ligand binding energy ({approx}1 eV). Additionally, all functionals predict shorter Cd-Se bond lengths on the QD surface than in its core, revealing the nature and degree of QD surface reconstruction. For proper modeling of geometries and QD-ligand interactions, however, augmentation of even a moderately sized basis set with polarization functions (e.g., LANL2DZ* and 6-31G*) is very important. A polar solvent has very significant implications for the ligand binding energy, decreasing it to 0.2-0.5 eV. However, the solvent model has a minor effect on the optoelectronic properties, resulting in persistent blue shifts up to {approx}0.3 eV of the low-energy optical transitions. For obtaining reasonable energy gaps and optical transition energies, hybrid XC functionals augmented by a long-range Hartree-Fock orbital exchange have to be applied.

  13. Effect of Ligands on Characteristics of (CdSe)13 Quantum Dot

    SciTech Connect (OSTI)

    Gao, Yang; Zhou, Bo; Kang, Seung-gu; Xin, Minsi; Yang, Ping; Dai, Xing; Wang, Zhigang; Zhou, Ruhong

    2014-01-01

    The widespread applications of quantum dots (QDs) have spurred an increasing interest in the study of their coating ligands, which can not only protect the electronic structures of the central QDs, but also control their permeability through biological membranes with both size and shape. In this work, we have used density functional theory (DFT) to investigate the electronic structures of (CdSe)13 passivated by OPMe2(CH2)nMe ligands with different lengths and various numbers of branches (Me=methyl group, n = 0, 1-3). Our results show that the absorption peak in the ultraviolet-visible (UV-vis) spectra displays a clear blue-shift, on the scale of ~100 nm, upon the binding of ligands. Once the total number of ligands bound with (CdSe)13 reached a saturated number (9 or 10), no more blue-shift occurred in the absorption peak in the UV-vis spectra. On the other hand, the aliphatic chain length of ligands has a negligible effect on the optical properties of the QD core. Analyses of the bonding characteristics confirm that optical transitions are dominantly governed by the central QD core rather than the organic passivation. Interestingly, the density of states (DOS) share similar characteristics as vibrational spectra, even though there is no coordination vibration mode between the ligands and the central QD. These findings might provide insights on the material design for the passivation of quantum dots for biomedical applications.

  14. Lattice dynamics of BaFe2X3(X=S,Se) compounds

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Popović, Z. V.; Šćepanović, M.; Lazarević, N.; Opačić, M.; Radonjić, M. M.; Tanasković, D.; Lei, Hechang; Petrovic, C.

    2015-02-27

    We present the Raman scattering spectra of the S=2 spin ladder compounds BaFe₂X₃ (X=S,Se) in a temperature range between 20 and 400 K. Although the crystal structures of these two compounds are both orthorhombic and very similar, they are not isostructural. The unit cell of BaFe₂S₃ (BaFe₂Se₃) is base-centered Cmcm (primitive Pnma), giving 18 (36) modes to be observed in the Raman scattering experiment. We have detected almost all Raman active modes, predicted by factor group analysis, which can be observed from the cleavage planes of these compounds. Assignment of the observed Raman modes of BaFe₂S(Se)₃ is supported by themore » lattice dynamics calculations. The antiferromagnetic long-range spin ordering in BaFe₂Se₃ below TN=255K leaves a fingerprint both in the A1g and B3g phonon mode linewidth and energy.« less

  15. Nonmonotonic pressure evolution of the upper critical field in superconducting FeSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kaluarachchi, Udhara S.; Taufour, Valentin; Böhmer, Anna E.; Tanatar, Makariy A.; Bud'ko, Sergey L.; Kogan, Vladimir G.; Prozorov, Ruslan; Canfield, Paul C.

    2016-02-01

    The pressure dependence of the upper critical field, Hc2,c, of single crystalline FeSe was studied using measurements of the interplane resistivity, ρc, in magnetic fields parallel to tetragonal c axis. Hc2,c(T) curves obtained under hydrostatic pressures up to 1.56 GPa, the range over which the superconducting transition temperature, Tc, of FeSe exhibits a nonmonotonic dependence with local maximum at p1 ≈ 0.8 GPa and local minimum at p2 ≈ 1.2 GPa. The slope of the upper critical field at Tc,(dHc2,c/dT)Tc, also exhibits a nonmonotonic pressure dependence with distinct changes at p1 and p2. For p < p1 the slope canmore » be described within a multiband orbital model. For both p1 < p < p2 and p > p2 the slope is in good semiquantitative agreement with a single band, orbital Helfand-Werthamer theory with Fermi velocities determined from Shubnikov–de Haas measurements. Lastly, this finding indicates that Fermi surface changes are responsible for the local minimum of Tc(p) at p2 ≈ 1.2 GPa.« less

  16. Biexciton formation and exciton coherent coupling in layered GaSe

    SciTech Connect (OSTI)

    Dey, P.; Paul, J.; Stevens, C. E.; Glikin, N.; Karaiskaj, D.; Moody, G.; Kovalyuk, Z. D.; Kudrynskyi, Z. R.; Romero, A. H.; Cantarero, A.; Hilton, D. J.

    2015-06-07

    Nonlinear two-dimensional Fourier transform (2DFT) and linear absorption spectroscopy are used to study the electronic structure and optical properties of excitons in the layered semiconductor GaSe. At the 1s exciton resonance, two peaks are identified in the absorption spectra, which are assigned to splitting of the exciton ground state into the triplet and singlet states. 2DFT spectra acquired for co-linear polarization of the excitation pulses feature an additional peak originating from coherent energy transfer between the singlet and triplet. At cross-linear polarization of the excitation pulses, the 2DFT spectra expose a new peak likely originating from bound biexcitons. The polarization dependent 2DFT spectra are well reproduced by simulations using the optical Bloch equations for a four level system, where many-body effects are included phenomenologically. Although biexciton effects are thought to be strong in this material, only moderate contributions from bound biexciton creation can be observed. The biexciton binding energy of ?2 meV was estimated from the separation of the peaks in the 2DFT spectra. Temperature dependent absorption and 2DFT measurements, combined with ab initio theoretical calculations of the phonon spectra, indicate strong interaction with the A{sub 1}{sup ?} phonon mode. Excitation density dependent 2DFT measurements reveal excitation induced dephasing and provide a lower limit for the homogeneous linewidth of the excitons in the present GaSe crystal.

  17. Manufacturing technology development for CuInGaSe sub 2 solar cell modules

    SciTech Connect (OSTI)

    Stanbery, B.J. )

    1991-11-01

    The report describes research performed by Boeing Aerospace and Electronics under the Photovoltaic Manufacturing Technology project. We anticipate that implementing advanced semiconductor device fabrication techniques to the production of large-area CuIn{sub 1-x}Ga{sub x}Se{sub 2} (CIGS)/Cd{sub 1-y}Zn{sub y}S/ZnO monolithically integrated thin-film solar cell modules will enable 15% median efficiencies to be achieved in high-volume manufacturing. We do not believe that CuInSe{sub 2} (CIS) can achieve this efficiency in production without sufficient gallium to significantly increase the band gap, thereby matching it better to the solar spectrum (i.e., x{ge}0.2). Competing techniques for CIS film formation have not been successfully extended to CIGS devices with such high band gaps. The SERI-confirmed intrinsic stability of CIS-based photovoltaics renders them far superior to a-Si:H-based devices, making a 30-year module lifetime feasible. The minimal amounts of cadmium used in the structure we propose, compared to CdTe-based devices, makes them environmentally safer and more acceptable to both consumers and relevant regulatory agencies. Large-area integrated thin-film CIGS modules are the product most likely to supplant silicon modules by the end of this decade and enable the cost improvements which will lead to rapid market expansion.

  18. Probing Interfacial Electronic States in CdSe Quantum Dots using Second Harmonic Generation Spectroscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Doughty, Benjamin L; Ma, Yingzhong; Shaw, Robert W

    2015-01-01

    Understanding and rationally controlling the properties of nanomaterial surfaces is a rapidly expanding field of research due to the dramatic role they play on the optical and electronic properties vital to light harvesting, emitting and detection technologies. This information is essential to the continued development of synthetic approaches designed to tailor interfaces for optimal nanomaterial based device performance. In this work, closely spaced electronic excited states in model CdSe quantum dots (QDs) are resolved using second harmonic generation (SHG) spectroscopy, and the corresponding contributions from surface species to these states are assessed. Two distinct spectral features are observed in themore » SHG spectra, which are not readily identified in linear absorption and photoluminescence excitation spectra. These features include a weak band at 395 6 nm, which coincides with transitions to the 2S1/2 1Se state, and a much more pronounced band at 423 4 nm arising from electronic transitions to the 1P3/2 1Pe state. Chemical modification of the QD surfaces through oxidation resulted in disappearance of the SHG band corresponding to the 1P3/2 1Pe state, indicating prominent surface contributions. Signatures of deep trap states localized on the surfaces of the QDs are also observed. We further find that the SHG signal intensities depend strongly on the electronic states being probed and their relative surface contributions, thereby offering additional insight into the surface specificity of SHG signals from QDs.« less

  19. Properties of Cu(In,Ga,Al)Se{sub 2} thin films fabricated by magnetron sputtering

    SciTech Connect (OSTI)

    Hameed, Talaat A.; Cao, Wei; Mansour, Bahiga A.; Elzawaway, Inas K.; Abdelrazek, El-Metwally M.; Elsayed-Ali, Hani E.

    2015-05-15

    Cu(In,Ga,Al)Se{sub 2} (CIGAS) thin films were studied as an alternative absorber layer material to Cu(In{sub x}Ga{sub 1?x})Se{sub 2}. CIGAS thin films with varying Al content were prepared by magnetron sputtering on Si(100) and soda-lime glass substrates at 350?C, followed by postdeposition annealing at 520?C for 5 h in vacuum. The film composition was measured by an electron probe microanalyzer while the elemental depth profiles were determined by secondary ion mass spectrometry. X-ray diffraction studies indicated that CIGAS films are single phase with chalcopyrite structure and that the (112) peak clearly shifts to higher 2? values with increasing Al content. Scanning electron microscopy images revealed dense and well-defined grains, as well as sharp CIGAS/Si(100) interfaces for all films. Atomic force microscopy analysis indicated that the roughness of CIGAS films decreases with increasing Al content. The bandgap of CIGAS films was determined from the optical transmittance and reflectance spectra and was found to increase as Al content increased.

  20. Characterization and device performance of (AgCu)(InGa)Se2 absorber layers

    SciTech Connect (OSTI)

    Hanket, Gregory; Boyle, Jonathan H.; Shafarman, William N.

    2009-06-08

    The study of (AgCu)(InGa)Se2 absorber layers is of interest in that Ag-chalcopyrites exhibit both wider bandgaps and lower melting points than their Cu counterparts. (AgCu)(InGa)Se2 absorber layers were deposited over the composition range 0 < Ag/(Ag+Cu) < 1 and 0.3 < Ga/(In+Ga) < 1.0 using a variety of elemental co-evaporation processes. Films were found to be singlephase over the entire composition range, in contrast to prior studies. Devices with Ga content 0.3 < Ga/(In+Ga) <0.5 tolerated Ag incorporation up to Ag/(Ag+Cu) = 0.5 without appreciable performance loss. Ag-containing films with Ga/(In+Ga) = 0.8 showed improved device characteristics over Cu-only control samples, in particular a 30-40% increase in short-circuit current. An absorber layer with composition Ag/(Ag+Cu) = 0.75 and Ga/(In+Ga) = 0.8 yielded a device with VOC = 890 mV, JSC = 20.5mA/cm2, fill factor = 71.3%, and ? = 13.0%.

  1. Surfactant-Free Synthesis of Bi?Te?-Te Micro-Nano Heterostructure with Enhanced Thermoelectric Figure of Merit

    SciTech Connect (OSTI)

    Zhang, Yichi; Wang, Heng; Kraemer, Stephan; Shi, Yifeng; Zhang, Fan; Snedaker, Matt; Ding, Kunlun; Moskovits, Martin; Snyder, G. Jeffrey; Stucky, Galen D.

    2011-01-01

    An ideal thermoelectric material would be a semiconductor with high electrical conductivity and relatively low thermal conductivity: an electron crystal, phonon glass. Introducing nanoscale heterostructures into the bulk TE matrix is one way of achieving this intuitively anomalous electron/phonon transport behavior. The heterostructured interfaces are expected to play a significant role in phonon scattering to reduce thermal conductivity and in the energy-dependent scattering of electrical carriers to improve the Seebeck coefficient. A nanoparticle building block assembly approach is plausible to fabricate three-dimensional heterostructured materials on a bulk commercial scale. However, a key problem in applying this strategy is the possible negative impact on TE performance of organic residue from the nanoparticle capping ligands. Herein, we report a wet chemical, surfactant-free, low-temperature, and easily up-scalable strategy for the synthesis of nanoscale heterophase Bi?Te?-Te via a galvanic replacement reaction. The micro-nano heterostructured material is fabricated bottom-up, by mixing the heterophase with commercial Bi?Te?. This unique structure shows an enhanced zT value of ~0.4 at room temperature. This heterostructure has one of the highest figures of merit among bismuth telluride systems yet achieved by a wet chemical bottom-up assembly. In addition, it shows a 40% enhancement of the figure of merit over our lab-made material without nanoscale heterostructures. This enhancement is mainly due to the decrease in the thermal conductivity while maintaining the power factor. Overall, this cost-efficient and room-temperature synthesis methodology provides the potential for further improvement and large-scale thermoelectric applications.

  2. ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping

    DOE Patents [OSTI]

    Ramanathan, Kannan; Hasoon, Falah S.; Asher, Sarah E.; Dolan, James; Keane, James C.

    2007-02-20

    A process for making a thin film ZnO/Cu(InGa)Se.sub.2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se.sub.2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se.sub.2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se.sub.2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.sub.2.

  3. Migrating data from TcSE to DOORS : an evaluation of the T-Plan Integrator software application.

    SciTech Connect (OSTI)

    Post, Debra S.; Manzanares, David A.; Taylor, Jeffrey L.

    2011-02-01

    This report describes our evaluation of the T-Plan Integrator software application as it was used to transfer a real data set from the Teamcenter for Systems Engineering (TcSE) software application to the DOORS software application. The T-Plan Integrator was evaluated to determine if it would meet the needs of Sandia National Laboratories to migrate our existing data sets from TcSE to DOORS. This report presents the struggles of migrating data and focuses on how the Integrator can be used to map a data set and its data architecture from TcSE to DOORS. Finally, this report describes how the bulk of the migration can take place using the Integrator; however, about 20-30% of the data would need to be transferred from TcSE to DOORS manually. This report does not evaluate the transfer of data from DOORS to TcSE.

  4. Enhanced ferroelectric properties and thermal stability of nonstoichiometric 0.92(Na{sub 0.5}Bi{sub 0.5})TiO{sub 3}-0.08(K{sub 0.5}Bi{sub 0.5})TiO{sub 3} single crystals

    SciTech Connect (OSTI)

    Zhang, Haiwu E-mail: hsluo@mail.sic.ac.cn; Chen, Chao; Deng, Hao; Li, Long; Graduate University of Chinese Academy of Sciences, Beijing 100049 ; Zhao, Xiangyong; Lin, Di; Li, Xiaobing; Ren, Bo; Luo, Haosu E-mail: hsluo@mail.sic.ac.cn; Yan, Jun

    2013-11-18

    Bi deficient, Mn doped 0.92(Na{sub 0.5}Bi{sub 0.5})TiO{sub 3}-0.08(K{sub 0.5}Bi{sub 0.5})TiO{sub 3} single crystals were grown by carefully controlled top-seeded solution growth method. Local structures were investigated by transmission electron microscopy. The site occupation and valence state of manganese were characterized by electron paramagnetic resonance spectrum. The leakage current density in the as-grown single crystals is effectively depressed. The introduced defect complexes suppress the temperature induced phase transformation, increasing the depolarization temperature (165?C) and thermal stability of ferroelectric properties.

  5. Structural characterization of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} as a function of temperature using neutron powder diffraction and extended X-ray absorption fine structure techniques

    SciTech Connect (OSTI)

    Mansour, A. N.; Wong-Ng, W.; Huang, Q.; Tang, W.; Thompson, A.; Sharp, J.

    2014-08-28

    The structure of Bi{sub 2}Te{sub 3} (Seebeck coefficient Standard Reference Material (SRM™ 3451)) and the related phase Sb{sub 2}Te{sub 3} have been characterized as a function of temperature using the neutron powder diffraction (NPD) and the extended X-ray absorption fine structure (EXAFS) techniques. The neutron structural studies were carried out from 20 K to 300 K for Bi{sub 2}Te{sub 3} and from 10 K to 298 K for Sb{sub 2}Te{sub 3}. The EXAFS technique for studying the local structure of the two compounds was conducted from 19 K to 298 K. Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} are isostructural, with a space group of R3{sup ¯}m. The structure consists of repeated quintuple layers of atoms, Te2-M-Te1-M-Te2 (where M = Bi or Sb) stacking along the c-axis of the unit cell. EXAFS was used to examine the bond distances and static and thermal disorders for the first three shells of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} as a function of temperature. The temperature dependencies of thermal disorders were analyzed using the Debye and Einstein models for lattice vibrations. The Debye and Einstein temperatures for the first two shells of Bi{sub 2}Te{sub 3} are similar to those of Sb{sub 2}Te{sub 3} within the uncertainty in the data. However, the Debye and Einstein temperatures for the third shell of Bi-Bi are significantly lower than those of the third shell of Sb-Sb. The Einstein temperature for the third shell is consistent with a soft phonon mode in both Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3}. The lower Einstein temperature of Bi-Bi relative to Sb-Sb is consistent with the lower value of thermal conductivity of Bi{sub 2}Te{sub 3} relative to Sb{sub 2}Te{sub 3}.

  6. Flowing versus Static Conditions for Measuring Multiple Exciton Generation in PbSe Quantum Dots

    SciTech Connect (OSTI)

    Midgett, Aaron G. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States); Hillhouse, Hugh W. [Univ. of Washington, Seattle, WA (United States); Hughes, Barbara K. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States); Nozik, Arthur J. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States); Beard, Matthew C. [Univ. of Colorado, Boulder, CO (United States)

    2010-09-22

    Recent reports question the validity of pulsed fs-laser experiments for measuring the photon-to-exciton quantum yields (QYs) that result from multiple exciton generation (MEG). The repetitive nature of these experiments opens up an alternative relaxation pathway that may produce artificially high results. We present transient-absorption (TA) data for 4.6 and 6.6 nm diameter PbSe quantum dots (QDs) at a variety of pump photon energies. The data are collected under laminar flow conditions with volumetric flow rates ranging from 0 to 150 mL/min (resulting in Reynolds numbers up to 460). The results are modeled with a spatially resolved population balance of generation, recombination, convective replacement, and accumulation of long-lived excited QDs. By comparing the simulations and experiments, the steady-state population of the long-lived QD-excited states and their kinetics are determined for different experimental conditions. We also improve upon reported photon-to-exciton QYs for PbSe QDs. We find differences in the observed TA dynamics between flowing and static conditions that depend upon photon fluence, pump photon energy, and quality of the QD surfaces. For excitation energies below 2 Eg, independent of QD size or photon fluence, we observe no flow rate dependence in the TA dynamics. At excitation energies of h? > 3 Eg, we observe differences between static and flowing conditions that are most pronounced for high photon fluences. At 3.7 Eg and for 4.6 nm PbSe QDs we find a QY of 1.2 0.1 and at 4.5 Eg the QY is 1.55 0.05. With 6.6 nm QDs excited at 4.7 Eg we observe no difference between static and flowing conditions and find a QY of 1.61 0.05. We also find that by treating the surface of QDs, we can decrease the charging probability (Pg ? 5 10-5) by a factor of 3-4. The observed variations suggest that different QD samples vary regarding their susceptibility to the creation of long-lived states.

  7. Apparent critical phenomena in the superionic phase transition of Cu2-xSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kang, Stephen Dongmin; Danilkin, Sergey A.; Aydemir, Umut; Avdeev, Maxim; Studer, Andrew; Snyder, G. Jeffrey

    2016-01-11

    The superionic phase transition ofmore » $${\\mathrm{Cu}}_{2-x}\\mathrm{Se}$$ accompanies drastic changes in transport properties. The Seebeck coefficient increases sharply while the electrical conductivity and thermal diffusivity drops. Such behavior has previously been attributed to critical phenomena under the assumption of a continuous phase transition. However, applying Landau's criteria suggests that the transition should be first order. Using the phase diagram that is consistent with a first order transition, we show that the observed transport properties and heat capacity curves can be accounted for and modeled with good agreement. The apparent critical phenomena is shown to be a result of compositional degree-of-freedom. In conclusion, understanding of the phase transition allows to explain the enhancement in the thermoelectric figure-of-merit that is accompanied with the transition.« less

  8. Nuclear Structure Relevant to Neutrinoless Double {beta} Decay: {sup 76}Ge and {sup 76}Se

    SciTech Connect (OSTI)

    Schiffer, J. P.; Gros, S.; Jiang, C. L.; Rehm, K. E. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Freeman, S. J.; Fitzpatrick, C. R.; Kay, B. P. [University of Manchester, Manchester M13 9PL (United Kingdom); Clark, J. A.; Deibel, C.; Heinz, A.; Parikh, A.; Parker, P. D.; Werner, V.; Wrede, C. [Yale University, New Haven, Connecticut 06520 (United States); Hirata, D. [GANIL (IN2P3/CNRS -DSM/CEA), B.P. 55027 14076 Caen Cedex 5 (France); Dept. of Physics and Astronomy, Open University, Milton Keynes, MK7 6AA (United Kingdom); Villari, A. C. C. [GANIL (IN2P3/CNRS -DSM/CEA), B.P. 55027 14076 Caen Cedex 5 (France)

    2008-03-21

    The possibility of observing neutrinoless double {beta} decay offers the opportunity of determining the effective neutrino mass if the nuclear matrix element were known. Theoretical calculations are uncertain, and measurements of the occupations of valence orbits by nucleons active in the decay can be important. The occupation of valence neutron orbits in the ground states of {sup 76}Ge (a candidate for such decay) and {sup 76}Se (the daughter nucleus) were determined by precisely measuring cross sections for both neutron-adding and removing transfer reactions. Our results indicate that the Fermi surface is much more diffuse than in theoretical calculations. We find that the populations of at least three orbits change significantly between these two ground states while in the calculations, the changes are confined primarily to one orbit.

  9. Stable n-CuInSe/sub 2/iodide-iodine photoelectrochemical cell

    DOE Patents [OSTI]

    Cahen, D.; Chen, Y.W.

    1984-09-20

    In a photoelectrochemical solar cell, stable output and solar efficiency in excess of 10% are achieved with a photoanode of n-CuInSe/sub 2/ electrode material and an iodine/iodide redox couple used in a liquid electrolyte. The photoanode is prepared by treating the electrode material by chemical etching, for example in Br/sub 2//MeOH; heating the etched electrode material in air or oxygen; depositing a surface film coating of indium on the electrode material after the initial heating; and thereafter again heating the electrode material in air or oxygen to oxidize the indium. The electrolyte is treated by the addition of Cu/sup +/ or Cu/sup 2 +/ salts and in In/sup 3 +/ salts.

  10. Stable N-CuInSe.sub.2 /iodide-iodine photoelectrochemical cell

    DOE Patents [OSTI]

    Cahen, David; Chen, Yih W.

    1985-01-01

    In a photoelectrochemical solar cell, stable output and solar efficiency in excess of 10% are achieved with a photoanode of n-CuInSe.sub.2 electrode material and an iodine/iodide redox couple used in a liquid electrolyte. The photoanode is prepared by treating the electrode material by chemical etching, for example in Br.sub.2 /MeOH; heating the etched electrode material in air or oxygen; depositing a surface film coating of indium on the electrode material after the initial heating; and thereafter again heating the electrode material in air or oxygen to oxidize the indium. The electrolyte is treated by the addition of Cu.sup.+ or Cu.sup.2+ salts and In.sup.3+ salts.

  11. Strain-dependent photoluminescence behavior in three geometries of CdSe/CdS nanocrystals

    SciTech Connect (OSTI)

    Choi, Charina L; Koski, Kristie J; Sivasankar, Sanjeevi; Alivisatos, A Paul

    2009-05-26

    In recent years, a new generation of quantum confined colloidal semiconductor structures has emerged, with more complex shapes than simple quantum dots1, 2. These include nanorods3 and tetrapods4. Beyond shape, it is also now possible to spatially vary the electron and hole potentials within these nanoparticles by varying the composition. Examples of these new structures include seeded dots, rods, and tetrapods, which contain a CdSe core embedded within a CdS shell5, 6. These structures may have many uses beyond those envisioned for simple quantum dots, which are frequently employed in luminescent applications7. This paper is concerned with changes in the optoelectronic properties of tetrapods when the arms are bent. We demonstrate that seeded tetrapods can serve as an optical strain gauge, capable of measuring forces on the order of nanonewtons. We anticipate that a nanocrystal strain gauge with optical readout will be useful for applications ranging from sensitive optomechanical devices to biological force investigations.

  12. Co-Evaporated Cu2ZnSnSe4 Films and Devices

    SciTech Connect (OSTI)

    Repins, I.; Beall, C.; Vora, N.; DeHart, C.; Kuciauskas, D.; Dippo, P.; To, B.; Mann, J.; Hsu, W. C.; Goodrich, A.; Noufi, R.

    2012-06-01

    The use of vacuum co-evaporation to produce Cu2ZnSnSe4 photovoltaic devices with 9.15% total-area efficiency is described. These new results suggest that the early success of the atmospheric techniques for kesterite photovoltaics may be related to the ease with which one can control film composition and volatile phases, rather than a fundamental benefit of atmospheric conditions for film properties. The co-evaporation growth recipe is documented, as is the motivation for various features of the recipe. Characteristics of the resulting kesterite films and devices are shown in scanning electron micrographs, including photoluminescence, current-voltage, and quantum efficiency. Current-voltage curves demonstrate low series resistance without the light-dark cross-over seen in many devices in the literature. Band gap indicated by quantum efficiency and photoluminescence is roughly consistent with that expected from first principles calculation.

  13. Development and characterization of PCDTBT:CdSe QDs hybrid solar cell

    SciTech Connect (OSTI)

    Dixit, Shiv Kumar Bhatnagar, Chhavi Kumari, Anita Madhwal, Devinder Bhatnagar, P. K. Mathur, P. C.

    2014-10-15

    Solar cell consisting of low band gap polymer poly[N-900-hepta-decanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10, 30-benzothiadiazole)] (PCDTBT) as donor and cadmium selenide/zinc sulphide (CdSe/ZnS) core shell quantum dots (QDs) as an acceptor has been developed. The absorption measurements show that the absorption coefficient increases in bulk heterojunction (BHJ) structure covering broad absorption spectrum (200nm–700nm). Also, the photoluminescence (PL) of the PCDTBT:QDs film is found to decrease by an order of magnitude showing a significant transfer of electrons to the QDs. With this approach and under broadband white light with an irradiance of 8.19 mW/cm{sup 2}, we have been able to achieve a power conversion efficiency (PCE) of 3.1 % with fill factor 0.42 for our typical solar cell.

  14. Photo-instability of CdSe/ZnS quantum dots in poly(methylmethacrylate) film

    SciTech Connect (OSTI)

    Zhang, Hongyi; Liu, Yu; Ye, Xiaoling; Chen, Yonghai

    2013-12-28

    The photo-instability of CdSe/ZnS quantum dots (QDs) has been studied under varied conditions. We discussed the main features of the evolution of photoluminescence (PL) intensity and energy at different laser powers, which showed critical dependences on the environment. The PL red shift in a vacuum showed strong temperature dependence, from which we concluded that the thermal activation energy for trapping states of the charge carriers was about 14.7 meV. Furthermore, the PL spectra showed asymmetric evolution during the laser irradiation, for which two possible explanations were discussed. Those results provided a comprehensive picture for the photo-instability of the colloidal QDs under different conditions.

  15. Optical and quantum efficiency analysis of (Ag,Cu)(In,Ga)Se2 absorber layers

    SciTech Connect (OSTI)

    Boyle, Jonathan; Hanket, Gregory; Shafarman, William

    2009-06-09

    (Ag,Cu)(In,Ga)Se2 thin films have been deposited by elemental co-evaporation over a wide range of compositions and their optical properties characterized by transmission and reflection measurements and by relative shift analysis of quantum efficiency device measurements. The optical bandgaps were determined by performing linear fits of (?h?)2 vs. h?, and the quantum efficiency bandgaps were determined by relative shift analysis of device curves with fixed Ga/(In+Ga) composition, but varying Ag/(Cu+Ag) composition. The determined experimental optical bandgap ranges of the Ga/(In+Ga) = 0.31, 0.52, and 0.82 groups, with Ag/(Cu+Ag) ranging from 0 to 1, were 1.19-1.45 eV, 1.32-1.56 eV, and 1.52-1.76 eV, respectively. The optical bowing parameter of the different Ga/(In+Ga) groups was also determined.

  16. Investigation of size dependent structural and optical properties of thin films of CdSe quantum dots

    SciTech Connect (OSTI)

    Sharma, Madhulika; Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology, Bombay, Powai, Mumbai 400076 ; Sharma, A.B.; Mishra, N.; Pandey, R.K.

    2011-03-15

    Research highlights: {yields} CdSe q-dots have been synthesized using simple chemical synthesis route. {yields} Thin film of CdSe quantum dots exhibited self-organized growth. {yields} Size dependent blue shift observed in the absorption edge of CdSe nanocrystallites. {yields} PL emission band corresponds to band edge luminescence and defect luminescence. {yields} Organized growth led to enhancement in luminescence yield of smaller size Q-dots. -- Abstract: Cadmium selenide (CdSe) quantum dots were grown on indium tin oxide substrate using wet chemical technique for possible application as light emitting devices. The structural, morphological and luminescence properties of the as deposited thin films of CdSe Q-dot have been investigated, using X-ray diffraction, transmission electron microscopy, atomic force microscopy and optical and luminescence spectroscopy. The quantum dots have been shown to deposit in an organized array on ITO/glass substrate. The as grown Q-dots exhibited size dependent blue shift in the absorption edge. The effect of quantum confinement also manifested as a blue shift of photoluminescence emission. It is shown that the nanocrystalline CdSe exhibits intense photoluminescence as compared to the large grained polycrystalline CdSe films.

  17. Single-step in-situ synthesis and optical properties of ZnSe nanostructured dielectric nanocomposites

    SciTech Connect (OSTI)

    Dey, Chirantan; Rahaman Molla, Atiar; Tarafder, Anal; Karmakar, Basudeb; Kr Mishra, Manish; De, Goutam; Goswami, Madhumita; Kothiyal, G. P.

    2014-04-07

    This work provides the evidence of visible red photoluminescent light emission from ZnSe nanocrystals (NCs) grown within a dielectric (borosilicate glass) matrix synthesized by a single step in-situ technique for the first time and the NC sizes were controlled by varying only the concentration of ZnSe in glass matrix. The ZnSe NCs were investigated by UV-Vis optical absorption spectroscopy, Raman spectroscopy, and transmission electron microscopy (TEM). The sizes of the ZnSe NCs estimated from the TEM images are found to alter in the range of 2–53 nm. Their smaller sizes of the NCs were also calculated by using the optical absorption spectra and the effective mass approximation model. The band gap enlargements both for carrier and exciton confinements were evaluated and found to be changed in the range of 0–1.0 eV. The Raman spectroscopic studies showed blue shifted Raman peaks of ZnSe at 295 and 315 cm{sup −1} indicating phonon confinement effect as well as compressive stress effect on the surface atoms of the NCs. Red photoluminescence in ZnSe-glass nanocomposite reveals a broad multiple-peak structure due to overlapping of emission from NC size related electron-hole recombination (∼707 nm) and emissions from defects to traps, which were formed due to Se and Zn vacancies signifying potential application in photonics.

  18. Effects of competing magnetic interactions on the electronic transport properties of CuCrSe{sub 2}

    SciTech Connect (OSTI)

    Tewari, Girish C.; Jawaharlal Nehru University, New Delhi 110067 ; Karppinen, Maarit; Rastogi, Ashok K.

    2013-02-15

    We have synthesized single-phase samples of the CuCrSe{sub 2} phase that exhibits hexagonal-rhombohedral layered crystal structure with space group R3m. Here we present a detailed study of electronic transport and magnetic properties of CuCrSe{sub 2}. We moreover investigate the heat capacity of CuCrSe{sub 2} in comparison to that of CuCrS{sub 2}. The electrical resistivity of CuCrSe{sub 2} shows metallic-like behavior down to 2 K, while the thermoelectric power is large around 100 {mu}V K{sup -1} at 300 K. A weak anomaly in resistivity and a rounded maximum in magnetic susceptibility are observed around 55 K. No sharp transition at 55 K is observed in the heat capacity of CuCrSe{sub 2}, rather a visible maximum is seen. At low temperatures from 2 to 14 K, the magnetic heat capacity follows T{sup 2}-dependence. We tentatively believe this behavior of CuCrSe{sub 2} to be due to competing magnetic interactions between intralayer Cr atoms. The ferromagnetic Cr-Se-Cr indirect exchange among intralayer Cr atoms is enhanced in the selenide compound (that is more metallic than the sulfide compound), and competes with the antiferromagnetic Cr-Cr direct interactions. The interlayer antiferromagnetic exchange through Cu atoms leads to magnetic ordering at low temperature at T{sub N}=55 K. - Graphical abstract: Comparison of magnetic properties of CuCrSe{sub 2} and CuCrS{sub 2} indicates a sharp cusp-like anomaly in magnetic susceptibility at the antiferromagnetic transition of CuCrS{sub 2} while the maximum of CuCrSe{sub 2} is well rounded. Magnetization is reversible after field-cooling (FC) and zero-field-cooling (ZFC) for both compounds. Highlights: Black-Right-Pointing-Pointer Layered CuCrSe{sub 2} can be synthesized in both fully and partially cation-ordered forms. Black-Right-Pointing-Pointer Contrary to previously believed insulating nature the cation-ordered phase is metallic. Black-Right-Pointing-Pointer Magnetic property of CuCrSe{sub 2} is somewhat different from that of CuCrS{sub 2}. Black-Right-Pointing-Pointer Magnetization and heat capacity data suggest complex short-range ordering for CuCrSe{sub 2}.

  19. CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy

    SciTech Connect (OSTI)

    Li Jingjing; Liu Shi; Wang Shumin; Ding Ding; Johnson, Shane R.; Zhang Yonghang; Liu Xinyu; Furdyna, Jacek K.; Smith, David J.

    2012-03-19

    CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63 {+-} 0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.

  20. Enhanced photorefractive performance in CdSe quantum-dot-dispersed poly(styrene-co-acrylonitrile) polymers

    SciTech Connect (OSTI)

    Li Xiangping; Embden, Joel van; Chon, James W. M.; Gu Min; Evans, Richard A.

    2010-06-21

    This paper reports on the enhanced photorefractive behavior of a CdSe quantum-dot-dispersed less expensive polymer of poly(styrene-co-acrylonitrile). The capability of CdSe quantum dots used as photosensitizers and the associated photorefractive performance are characterized through a photocurrent experiment and a two-beam coupling experiment, respectively. An enhanced two-beam coupling gain coefficient of 12.2 cm{sup -1} at 46 V/mum was observed owning to the reduced potential barrier. The photorefractive performance per CdSe quantum dot is three orders of magnitude higher than that in the sample sensitized by trinitrofluorenone in poly(styrene-co-acrylonitrile), and almost ten times higher than that in the CdSe quantum-dot-sensitized poly(N-vinylcarbazole) polymers.

  1. Intrinsic Rashba-like splitting in asymmetric Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} heterogeneous topological insulator films

    SciTech Connect (OSTI)

    Liu, Xiaofei; Guo, Wanlin

    2014-08-25

    We show by density functional theory calculations that asymmetric hetero-stacking of Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} films can modulate the topological surface states. Due to the structure inversion asymmetry, an intrinsic Rashba-like splitting of the conical surface bands is aroused. While such splitting in homogeneous Bi{sub 2}Te{sub 3}-class topological insulators can be realized in films with more than three quintuple layers under external electric fields, the hetero-stacking breaks the limit of thickness for preserving the topological nature into the thinnest two quintuple layers. These results indicate that the hetero-stacking can serve as an efficient strategy for spin-resolved band engineering of topological insulators.

  2. Domain formation due to surface steps in topological insulator Bi{sub 2}Te{sub 3} thin films grown on Si (111) by molecular beam epitaxy

    SciTech Connect (OSTI)

    Borisova, S.; Kampmeier, J.; Mussler, G.; Grützmacher, D.; Jülich Aachen Research Alliance, Fundamentals of Future Information Technologies, Jülich 52425 ; Luysberg, M.

    2013-08-19

    The atomic structure of topological insulators Bi{sub 2}Te{sub 3} thin films on Si (111) substrates grown in van der Waals mode by molecular beam epitaxy has been investigated by in situ scanning tunneling microscopy and scanning transmission electron microscopy. Besides single and multiple quintuple layer (QL) steps, which are typical for the step-flow mode of growth, a number of 0.4 QL steps is observed. We determine that these steps originate from single steps at the substrate surface causing domain boundaries in the Bi{sub 2}Te{sub 3} film. Due to the peculiar structure of these domain boundaries the domains are stable and penetrate throughout the entire film.

  3. Long-wavelength emission in photo-pumped GaAs{sub 1?x}Bi{sub x} laser with low temperature dependence of lasing wavelength

    SciTech Connect (OSTI)

    Fuyuki, Takuma; Yoshioka, Ryo; Yoshida, Kenji; Yoshimoto, Masahiro

    2013-11-11

    This study demonstrates long-wavelength emission of up to 1204?nm in photo-pumped GaAs{sub 1?x}Bi{sub x} lasers grown by molecular beam epitaxy under low temperature conditions. The characteristic temperature (T{sub 0}) between 20 and 80?C in the GaAs{sub 1?x}Bi{sub x} lasers with Al{sub 0.3}Ga{sub 0.7}As electron blocking layer is approximately 100?K, which is larger than that of the typical 1.3-?m InGaAsP Fabry-Perot laser diodes (FP-LDs; T{sub 0}?=?66?K). The temperature coefficient of the lasing wavelength is approximately 40% of that of InGaAsP FP-LDs.

  4. Photodeposition of Pt on Colloidal CdS and CdSe/CdS Semiconductor Nanostructures

    SciTech Connect (OSTI)

    Dukovic, Gordana; Merkle, Maxwell G.; Nelson, James H.; Hughes, Steven M.; Alivisatos, A. Paul

    2008-08-06

    Semiconductor photocatalysis has been identified as a promising avenue for the conversion of solar energy into environmentally friendly fuels, most notably by the production of hydrogen from water.[1-5] Nanometer-scale materials in particular have attracted considerable scientific attention as the building blocks for light-harvesting applications.[6,7] Their desirable attributes include tunability of the optical properties with size, amenability to relatively inexpensive low-temperature processing, and a high degree of synthetic sophistication leading to increasingly complex and multi-functional architectures. For photocatalysis in particular, the high surface-to-volume ratios in nanoscale materials should lead to an increased availability of carriers for redox reactions on the nanoparticle surface. Recombination of photoexcited carriers directly competes with photocatalytic activity.[3] Charge separation is often achieved with multi-component heterostructures. An early example is the case of TiO2 powders functionalized with Pt and RuO2 particles, where photoexcited electrons are transferred to Pt (the reduction site) and holes to RuO2 (the oxidation site).[8] More recently, many colloidally synthesized nanometer-scale metal-semiconductor heterostructures have been reported.[7,9,10] A majority of these structures are made by thermal methods.[7,10] We have chosen to study photochemical formation of metal-semiconductor heterostructures. The detailed understanding of the mechanisms involved in photodeposition of metals on nanometer-scale semiconductors is necessary to enable a high degree of synthetic control. At the same time, because the results of metal deposition can be directly observed by electron microscopy, it can be used to understand how factors such as nanocrystal composition, shape, carrier dynamics, and surface chemistry influence the photochemical properties of semiconductor nanocrystals. In this communication, we report on the photodeposition of Pt on colloidal CdS and CdSe/CdS core/shell nanocrystals. Among the II-VI semiconductors, CdS is of particular interest because it has the correct band alignment for water photolysis[2] and has been demonstrated to be photocatalytically active.[11-16] We have found that the photoexcitation of CdS and CdSe/CdS in the presence of an organometallic Pt precursor leads to deposition of Pt nanoparticles on the semiconductor surface. Stark differences are observed in the Pt nanoparticle location on the two substrates, and the photodeposition can be completely inhibited by the modification of the semiconductor surface. Our results suggest that tuning of the semiconductor band structure, spatial organization and surface chemistry should be crucial in the design of photocatalytic nanostructures.

  5. Large single crystal quaternary alloys of IB-IIIA-SE.sub.2 and methods of synthesizing the same

    DOE Patents [OSTI]

    Ciszek, Theodore F.

    1988-01-01

    New alloys of Cu.sub.x Ag.sub.(1-x) InSe.sub.2 (where x ranges between 0 and 1 and preferably has a value of about 0.75) and CuIn.sub.y Ga.sub.(1-y) Se.sub.2 (where y ranges between 0 and 1 and preferably has a value of about 0.90) in the form of single crystals with enhanced structure perfection, which crystals are substantially free of fissures are disclosed. Processes are disclosed for preparing the new alloys of Cu.sub.x Ag.sub.(1-x) InSe.sub.2. The process includes placing stoichiometric quantities of a Cu, Ag, In, and Se reaction mixture or stoichiometric quantities of a Cu, In, Ga, and Se reaction mixture in a refractory crucible in such a manner that the reaction mixture is surrounded by B.sub.2 O.sub.3, placing the thus loaded crucible in a chamber under a high pressure atmosphere of inert gas to confine the volatile Se to the crucible, and heating the reaction mixture to its melting point. The melt can then be cooled slowly to form, by direct solidification, a single crystal with enhanced structure perfection, which crystal is substantially free of fissures.

  6. Large single crystal quaternary alloys of IB-IIIA-Se/sub 2/ and methods of synthesizing the same

    DOE Patents [OSTI]

    Ciszek, T.F.

    1986-07-15

    New alloys of Cu/sub x/Ag/sub (1-x)/InSe/sub 2/ (where x ranges between 0 and 1 and preferably has a value of about 0.75) and CuIn/sub y/Ga/sub (1-y)/Se/sub 2/ (where y ranges between 0 and 1 and preferably has a value of about 0.90) in the form of single crystals with enhanced structure perfection, which crystals are substantially free of fissures, are disclosed. Processes are disclosed for preparing the new alloys of Cu/sub x/Ag/sub (1-x)/InSe/sub 2/. The process includes placing stoichiometric quantities of a Cu, Ag, In, and Se reaction mixture or stoichiometric quantities of a Cu, In, Ga, and Se reaction mixture in a refractory crucible in such a manner that the reaction mixture is surrounded by B/sub 2/O/sub 3/, placing the thus loaded crucible in a chamber under a high pressure atmosphere of inert gas to confine the volatile Se to the crucible, and heating the reaction mixture to its melting point. The melt can then be cooled slowly to form, by direct solidification, a single crystal with enhanced structure perfection, which crystal is substantially free of fissures.

  7. Crystal structure of lanthanum bismuth silicate Bi{sub 2-x}La{sub x}SiO{sub 5} (x{approx}0.1)

    SciTech Connect (OSTI)

    Georges, Samuel . E-mail: samuel.georges@lepmi.inpg.fr; Goutenoire, Francois; Lacorre, Philippe

    2006-12-15

    A melting and glass recrystallization route was carried out to stabilize a new tetragonal form of Bi{sub 2}SiO{sub 5} with bismuth partially substituted by lanthanum. The crystal structure of Bi{sub 2-x}La{sub x}SiO{sub 5} (x{approx}0.1) was determined from powder X-ray and neutron diffraction data (space group I4/mmm, a=b=3.8307(3)A, c=15.227(1)A, V=224.18A{sup 3}, Z=2; reliability factors: R{sub Bragg}=5.65%, R{sub p}=14.6%, R{sub wp}=16.8%, R{sub exp}=8.3%, {chi}{sup 2}=8.3 (X-ray) and R{sub Bragg}=2.40%, R{sub p}=8.1%, R{sub wp}=7.5%, R{sub exp}=4.2%, {chi}{sup 2}=3.3 (neutrons); 11 structural parameters refined). The main effect of lanthanum substitution is to introduce, by removing randomly some bismuth 6s{sup 2} lone pairs, a structural disorder in the surroundings of (Bi{sub 2}O{sub 2}){sup 2+} layers, that is in the (SiO{sub 3}){sup 2-} pyroxene files arrangement. It results in a symmetry increase relatively to the parent compound Bi{sub 2}SiO{sub 5}, which is orthorhombic. The two structures are compared.

  8. Anisotropic scattering rate in Fe-substituted Bi2Sr2Ca(Cu1-xFex)2O8+δ

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Naamneh, M.; Lubashevsky, Y.; Lahoud, E.; Gu, G.; Kanigel, A.

    2015-05-27

    We measured the electronic structure of Fe substituted Bi2212 using Angle Resolved Photoemission Spectroscopy (ARPES). We find that the substitution does not change the momentum dependence of the superconducting gap but induces a very anisotropic enhancement of the scattering rate. A comparison of the effect of Fe substitution to that of Zn substitution suggests that the Fe reduces Tc so effectively because it supresses very strongly the coherence weight around the anti-nodes.

  9. Nucleation and growth dynamics of MBE-grown topological insulator Bi{sub 2}Te{sub 3} films on Si (111)

    SciTech Connect (OSTI)

    Borisova, Svetlana; Krumrain, Julian; Mussler, Gregor; Grützmacher, Detlev; Luysberg, Martina

    2013-12-04

    Topological insulator Bi{sub 2}Te{sub 3} films have been grown by molecular beam epitaxy on Si (111) substrates. The structural properties of the ultra-thin films and their evolution in morphology during the growth have been investigated. The growth starts by a nucleation of separate islands and subsequently turns into a layer-by-layer growth mode. Despite this, the grown film is found to be single crystalline and fully relaxed from the first atomic layer.

  10. Processing approach towards the formation of thin-film Cu(In,Ga)Se2

    DOE Patents [OSTI]

    Beck, Markus E.; Noufi, Rommel

    2003-01-01

    A two-stage method of producing thin-films of group IB-IIIA-VIA on a substrate for semiconductor device applications includes a first stage of depositing an amorphous group IB-IIIA-VIA precursor onto an unheated substrate, wherein the precursor contains all of the group IB and group IIIA constituents of the semiconductor thin-film to be produced in the stoichiometric amounts desired for the final product, and a second stage which involves subjecting the precursor to a short thermal treatment at 420.degree. C.-550.degree. C. in a vacuum or under an inert atmosphere to produce a single-phase, group IB-III-VIA film. Preferably the precursor also comprises the group VIA element in the stoichiometric amount desired for the final semiconductor thin-film. The group IB-IIIA-VIA semiconductor films may be, for example, Cu(In,Ga)(Se,S).sub.2 mixed-metal chalcogenides. The resultant supported group IB-IIIA-VIA semiconductor film is suitable for use in photovoltaic applications.

  11. Performance Characterization and Remedy of Experimental CuInGaSe2 Mini-Modules: Preprint

    SciTech Connect (OSTI)

    Pern, F. J.; Yan, F.; Mansfield, L.; Glynn, S.; Rekow, M.; Murion, R.

    2011-07-01

    We employed current-voltage (I-V), quantum efficiency (QE), photoluminescence (PL), electroluminescence (EL), lock-in thermography (LIT), and (electrochemical) impedance spectroscopy (ECIS) to complementarily characterize the performance and remedy for two pairs of experimental CuInGaSe2 (CIGS) mini-modules. One pair had the three scribe-lines (P1/P2/P3) done by a single pulse-programmable laser, and the other had the P2/P3 lines by mechanical scribe. Localized QE measurements for each cell strip on all four mini-modules showed non-uniform distributions that correlated well with the presence of performance-degrading strips or spots revealed by PL, EL, and LIT imaging. Performance of the all-laser-scribed mini-modules improved significantly by adding a thicker Al-doped ZnO layer and reworking the P3 line. The efficiency on one of the all-laser-scribed mini-modules increased notably from 7.80% to 8.56% after the performance-degrading spots on the side regions along the cell array were isolated by manual scribes.

  12. CdSe Quantum-Dot-Sensitized Solar Cell with ~100% Internal Quantum Efficiency

    SciTech Connect (OSTI)

    Fuke, Nobuhiro; Hoch, Laura B.; Koposov, Alexey Y.; Manner, Virginia W.; Werder, Donald J.; Fukui, Atsushi; Koide, Naoki; Katayama, Hiroyuki; Sykora, Milan

    2010-10-20

    We have constructed and studied photoelectrochemical solar cells (PECs) consisting of a photoanode prepared by direct deposition of independently synthesized CdSe nanocrystal quantum dots (NQDs) onto a nanocrystalline TiO2 film (NQD/TiO2), aqueous Na2S or Li2S electrolyte, and a Pt counter electrode. We show that light harvesting efficiency (LHE) of the NQD/TiO2 photoanode is significantly enhanced when the NQD surface passivation is changed from tri-n-octylphosphine oxide (TOPO) to 4-butylamine (BA). In the PEC the use of NQDs with a shorter passivating ligand, BA, leads to a significant enhancement in both the electron injection efficiency at the NQD/TiO2 interface and charge collection efficiency at the NQD/electrolyte interface, with the latter attributed mostly to a more efficient diffusion of the electrolyte through the pores of the photoanode. We show that by utilizing BA-capped NQDs and aqueous Li2S as an electrolyte, it is possible to achieve ~100% internal quantum efficiency of photon-to-electron conversion, matching the performance of dye-sensitized solar cells.

  13. Anomalously Large Polarization Effect Responsible for Excitonic Red Shifts in PbSe Quantum Dot Solids

    SciTech Connect (OSTI)

    A Wolcott; V Doyeux; C Nelson; R Gearba; K Lei; K Yager; A dolocan; K Williams; D Nguyen; X Zhu

    2011-12-31

    The formation of solid thin films from colloidal semiconductor quantum dots (QDs) is often accompanied by red shifts in excitonic transitions, but the mechanisms responsible for the red shifts are under debate. We quantitatively address this issue using optical absorption spectroscopy of two-dimensional (2D) and three-dimensional (3D) arrays of PbSe QDs with controlled inter-QD distance, which was determined by the length of alkanedithiol linking molecules. With decreasing inter-QD distance, the first and second exciton absorption peaks show increasing red shifts. Using thin films consisting of large and isolated QDs embedded in a matrix of small QDs, we determine that a dominant contribution to the observed red shift is due to changes in polarization of the dielectric environment surrounding each QD ({approx}88%), while electronic or transition dipole coupling plays a lesser role. However, the observed red shifts are more than 1 order of magnitude larger than theoretical predictions based on the dielectric polarization effect for spherical QDs. We attribute this anomalously large polarization effect to deviations of the exciton wave functions from eigenfunctions of the idealized spherical quantum well model.

  14. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore » the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  15. Monte Carlo modeling of transport in PbSe nanocrystal films

    SciTech Connect (OSTI)

    Carbone, I. Carter, S. A.; Zimanyi, G. T.

    2013-11-21

    A Monte Carlo hopping model was developed to simulate electron and hole transport in nanocrystalline PbSe films. Transport is carried out as a series of thermally activated hopping events between neighboring sites on a cubic lattice. Each site, representing an individual nanocrystal, is assigned a size-dependent electronic structure, and the effects of particle size, charging, interparticle coupling, and energetic disorder on electron and hole mobilities were investigated. Results of simulated field-effect measurements confirm that electron mobilities and conductivities at constant carrier densities increase with particle diameter by an order of magnitude up to 5?nm and begin to decrease above 6?nm. We find that as particle size increases, fewer hops are required to traverse the same distance and that site energy disorder significantly inhibits transport in films composed of smaller nanoparticles. The dip in mobilities and conductivities at larger particle sizes can be explained by a decrease in tunneling amplitudes and by charging penalties that are incurred more frequently when carriers are confined to fewer, larger nanoparticles. Using a nearly identical set of parameter values as the electron simulations, hole mobility simulations confirm measurements that increase monotonically with particle size over two orders of magnitude.

  16. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    SciTech Connect (OSTI)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer has the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.

  17. Temperature-driven band inversion in Pb?.??Sn?.??Se: Optical and Hall-effect studies

    SciTech Connect (OSTI)

    Anand, Naween; Gu, Genda; Buvaev, Sanal; Hebard, A. F.; Tanner, D. B.; Chen, Zhiguo; Li, Zhiqiang; Choudhary, Kamal; Sinnott, S. B.; Martin, C.

    2014-12-23

    Optical and Hall-effect measurements have been performed on single crystals of Pb?.??Sn?.??Se, a IV-VI mixed chalcogenide. The temperature dependent (10300 K) reflectance was measured over 407000 cm? (5870 meV) with an extension to 15,500 cm? (1.92 eV) at room temperature. The reflectance was fit to the Drude-Lorentz model using a single Drude component and several Lorentz oscillators. The optical properties at the measured temperatures were estimated via Kramers-Kronig analysis as well as by the Drude-Lorentz fit. The carriers were p-type with the carrier density determined by Hall measurements. A signature of valence intraband transition is found in the low-energy optical spectra. It is found that the valence-conduction band transition energy as well as the free carrier effective mass reach minimum values at 100 K, suggesting temperature-driven band inversion in the material. Density function theory calculation for the electronic band structure also make similar predictions.

  18. Temperature-driven band inversion in Pb?.??Sn?.??Se: Optical and Hall-effect studies

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Anand, Naween; Gu, Genda; Buvaev, Sanal; Hebard, A. F.; Tanner, D. B.; Chen, Zhiguo; Li, Zhiqiang; Choudhary, Kamal; Sinnott, S. B.; Martin, C.

    2014-12-23

    Optical and Hall-effect measurements have been performed on single crystals of Pb?.??Sn?.??Se, a IV-VI mixed chalcogenide. The temperature dependent (10300 K) reflectance was measured over 407000 cm? (5870 meV) with an extension to 15,500 cm? (1.92 eV) at room temperature. The reflectance was fit to the Drude-Lorentz model using a single Drude component and several Lorentz oscillators. The optical properties at the measured temperatures were estimated via Kramers-Kronig analysis as well as by the Drude-Lorentz fit. The carriers were p-type with the carrier density determined by Hall measurements. A signature of valence intraband transition is found in the low-energy opticalmorespectra. It is found that the valence-conduction band transition energy as well as the free carrier effective mass reach minimum values at 100 K, suggesting temperature-driven band inversion in the material. Density function theory calculation for the electronic band structure also make similar predictions.less

  19. Polytypism, polymorphism, and superconductivity in TaSe2–xTex

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Luo, Huixia; Xie, Weiwei; Tao, Jing; Inoue, Hiroyuki; Gyenis, András; Krizan, Jason W.; Yazdani, Ali; Zhu, Yimei; Cava, Robert Joseph

    2015-03-03

    Polymorphism in materials often leads to significantly different physical properties - the rutile and anatase polymorphs of TiO₂ are a prime example. Polytypism is a special type of polymorphism, occurring in layered materials when the geometry of a repeating structural layer is maintained but the layer stacking sequence of the overall crystal structure can be varied; SiC is an example of a material with many polytypes. Although polymorphs can have radically different physical properties, it is much rarer for polytypism to impact physical properties in a dramatic fashion. Here we study the effects of polytypism and polymorphism on the superconductivitymore » of TaSe₂, one of the archetypal members of the large family of layered dichalcogenides. We show that it is possible to access 2 stable polytypes and 2 stable polymorphs in the TaSe2-xTex solid solution, and find that the 3R polytype shows a superconducting transition temperature that is between 6 and 17 times higher than that of the much more commonly found 2H polytype. Thus, the reason for this dramatic change is not apparent, but we propose that it arises either from a remarkable dependence of Tc on subtle differences in the characteristics of the single layers present, or from a surprising effect of the layer stacking sequence on electronic properties that instead are expected to be dominated by the properties of a single layer in materials of this kind.« less

  20. Spin-Induced Polarizations and Nonreciprocal Directional Dichroism of the Room-Temperature Multiferroic BiFeO3

    SciTech Connect (OSTI)

    Fishman, Randy Scott; Lee, Jun Hee; Bordacs, Sandor; Kezsmarki, Istvan; Nagel, Urmas; Room, Toomas

    2015-09-14

    A microscopic model for the room-temperature multiferroic BiFeO3 that includes two Dzyaloshinskii-Moriya interactions and single-ion anisotropy along the ferroelectric polarization predicts both the zero-field spectroscopic modes as well as their splitting and evolution in a magnetic field. Due to simultaneously broken time-reversal and spatial-inversion symmetries, the absorption of light changes as the magnetic field or the direction of light propagation is reversed. We discuss three physical mechanisms that may contribute to this absorption asymmetry known as directional dichroism: the spin current, magnetostriction, and single-ion anisotropy. We conclude that the directional dichroism in BiFeO3 is dominated by the spin-current polarization and is insensitive to the magnetostriction and easy-axis anisotropy. With three independent spin-current parameters, our model accurately describes the directional dichroism observed for magnetic field along [1, -1, 0]. Since some modes are almost transparent to light traveling in one direction but opaque for light traveling in the opposite direction, BiFeO3 can be used as a room-temperature optical diode at certain frequencies in the GHz to THz range. This work demonstrates that an analysis of the directional dichroism spectra based on an effective spin model supplemented by first-principles calculations can produce a quantitative microscopic theory of the magnetoelectric couplings in multiferroic materials.

  1. Ultrasensitive search for long-lived superheavy nuclides in the mass range A=288 to A=300 in natural Pt, Pb, and Bi

    SciTech Connect (OSTI)

    Dellinger, F.; Forstner, O.; Golser, R.; Priller, A.; Steier, P.; Wallner, A.; Winkler, G.; Kutschera, W.

    2011-06-15

    Theoretical models of superheavy elements (SHEs) predict a region of increased stability around the proton and neutron shell closures of Z = 114 and N = 184. Therefore a sensitive search for nuclides in the mass range from A = 288 to A = 300 was performed in natural platinum, lead, and bismuth, covering long-lived isotopes of Eka-Pt (Ds, Z = 110), Eka-Pb (Z = 114), and Eka-Bi (Z = 115). Measurements with accelerator mass spectrometry (AMS) at the Vienna Environmental Research Accelerator (VERA) established upper limits for these SHE isotopes in Pt, Pb, and Bi with abundances of <2x10{sup -15}, <5x10{sup -14}, and <5x10{sup -13}, respectively. These results complement earlier searches for SHEs with AMS at VERA in natural thorium and gold, which now amounts to a total number of 37 SHE nuclides having been explored with AMS. In none of our measurements was evidence found for the existence of SHEs in nature at the reported sensitivity level. Even though a few events were observed in the window for {sup 293}Eka-Bi, a particularly strong pileup background did not allow a definite SHE isotope identification. The present result sets limits on nuclides around the center of the island of stability, essentially ruling out the existence of SHE nuclides with half-lives longer than {approx}150 million years.

  2. Melt processing of the Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub y] superconductor in oxygen and argon atmospheres

    SciTech Connect (OSTI)

    Holesinger, T.G.; Miller, D.J. ); Chumbley, L.S. )

    1992-08-01

    Solidification and subsequent annealing of Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub y] (2212) in oxygen and argon atmospheres were investigated in order to identify alternative processing routes for controlling microstructures and superconducting properties. In addition to 2212, several other phases formed on cooling in O[sub 2] and did not disappear upon subsequent annealing. Crystallization in Ar resulted in a divorced eutetic structure of Bi[sub 2]Sr[sub 3-x]Ca[sub x]O[sub y] and Cu[sub 2]O/CuO. The superconductor was formed on subsequent anneals. Samples melted in Ar and then annealed generally possessed a more uniform microstructure compared with samples that were melted in oxygen and annealed. Compositional measurements of the 2212 phase suggest that CaO segregation in the melt may be minimized with an overall composition such as Bi[sub 2.15]Sr[sub 2]Ca[sub 0.85]Cu[sub 2]O[sub y].

  3. Melt processing of the Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub y} superconductor in oxygen and argon atmospheres

    SciTech Connect (OSTI)

    Holesinger, T.G.; Miller, D.J.; Chumbley, L.S.

    1992-08-01

    Solidification and subsequent annealing of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub y} (2212) in oxygen and argon atmospheres were investigated in order to identify alternative processing routes for controlling microstructures and superconducting properties. In addition to 2212, several other phases formed on cooling in O{sub 2} and did not disappear upon subsequent annealing. Crystallization in Ar resulted in a divorced eutetic structure of Bi{sub 2}Sr{sub 3-x}Ca{sub x}O{sub y} and Cu{sub 2}O/CuO. The superconductor was formed on subsequent anneals. Samples melted in Ar and then annealed generally possessed a more uniform microstructure compared with samples that were melted in oxygen and annealed. Compositional measurements of the 2212 phase suggest that CaO segregation in the melt may be minimized with an overall composition such as Bi{sub 2.15}Sr{sub 2}Ca{sub 0.85}Cu{sub 2}O{sub y}.

  4. Electroforming of Bi(1-x)Sb(x) nanowires for high-efficiency micro-thermoelectric cooling devices on a chip.

    SciTech Connect (OSTI)

    Overmyer, Donald L.; Webb, Edmund Blackburn, III; Siegal, Michael P.; Yelton, William Graham

    2006-11-01

    Active cooling of electronic systems for space-based and terrestrial National Security missions has demanded use of Stirling, reverse-Brayton, closed Joule-Thompson, pulse tube and more elaborate refrigeration cycles. Such cryocoolers are large systems that are expensive, demand large powers, often contain moving parts and are difficult to integrate with electronic systems. On-chip, solid-state, active cooling would greatly enhance the capabilities of future systems by reducing the size, cost and inefficiencies compared to existing solutions. We proposed to develop the technology for a thermoelectric cooler capable of reaching 77K by replacing bulk thermoelectric materials with arrays of Bi{sub 1-x}Sb{sub x} nanowires. Furthermore, the Sandia-developed technique we will use to produce the oriented nanowires occurs at room temperature and can be applied directly to a silicon substrate. Key obstacles include (1) optimizing the Bi{sub 1-x}Sb{sub x} alloy composition for thermoelectric properties; (2) increasing wire aspect ratios to 3000:1; and (3) increasing the array density to {ge} 10{sup 9} wires/cm{sup 2}. The primary objective of this LDRD was to fabricate and test the thermoelectric properties of arrays of Bi{sub 1-x}Sb{sub x} nanowires. With this proof-of-concept data under our belts we are positioned to engage National Security systems customers to invest in the integration of on-chip thermoelectric coolers for future missions.

  5. A novel solar bi-ejector refrigeration system and the performance of the added injector with different structures and operation parameters

    SciTech Connect (OSTI)

    Wang, Fei; Shen, Shengqiang

    2009-12-15

    A novel solar bi-ejector refrigeration system was investigated, whose difference compared to the traditional system is that the circulation pump is replaced by a thermal injector. The new system works more stably and needs less maintenance work than the old one, and the whole system can more fully utilize the solar energy. The mathematical models for calculating the performance of the injector and the whole solar refrigeration system were established. The pressure rise performance of injector under different structure and operation parameters and the performance of solar bi-ejector refrigeration system were studied with R123. The results show that the discharged pressure of injector is affected by structure dimensions of injector and operation conditions. With increasing generation temperature, the entrainment ratio of ejector becomes better while that of injector becomes worse and the overall thermal efficiency of the solar bi-ejector refrigeration system first increases and then decreases with an optimum value of 0.132 at generation temperature of 105 C, condensation temperature of 35 C and evaporation temperature of 10 C. (author)

  6. Influence of Mn concentration on magnetic topological insulator MnxBi2−xTe3 thin-film Hall-effect sensor

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ni, Y.; Zhang, Z.; Nlebedim, I. C.; Hadimani, R. L.; Jiles, D. C.

    2015-06-11

    Hall-effect (HE) sensors based on high-quality Mn-doped Bi2Te3 topological insulator (TI) thin films have been systematically studied in this paper. Improvement of Hall sensitivity is found after doping the magnetic element Mn into Bi2Te3. The sensors with low Mn concentrations, MnxBi2-xTe3, x = 0.01 and 0.08 show the linear behavior of Hall resistance with sensitivity about 5 Ω/T. And their Hall sensitivity shows weak dependence on temperature. For sensors with high Mn concentration (x = 0.23), the Hall resistance with respect to magnetic field shows a hysteretic behavior. Moreover, its sensitivity shows almost eight times as high as that ofmore »the HE sensors with low Mn concentration. The highest sensitivity can reach 43 Ω/T at very low magnetic field. This increase of Hall sensitivity is caused by the occurrence of anomalous HE (AHE) after ferromagnetic phase transition. Our work indicates that the magnetic-element-doped TIs with AHE are good candidates for HE sensors.« less

  7. Influence of Mn concentration on magnetic topological insulator MnxBi2−xTe3 thin-film Hall-effect sensor

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ni, Y.; Zhang, Z.; Nlebedim, I. C.; Hadimani, R. L.; Jiles, D. C.

    2015-06-11

    Hall-effect (HE) sensors based on high-quality Mn-doped Bi2Te3 topological insulator (TI) thin films have been systematically studied in this paper. Improvement of Hall sensitivity is found after doping the magnetic element Mn into Bi2Te3. The sensors with low Mn concentrations, MnxBi2-xTe3, x = 0.01 and 0.08 show the linear behavior of Hall resistance with sensitivity about 5 Ω/T. And their Hall sensitivity shows weak dependence on temperature. For sensors with high Mn concentration (x = 0.23), the Hall resistance with respect to magnetic field shows a hysteretic behavior. Moreover, its sensitivity shows almost eight times as high as that ofmore » the HE sensors with low Mn concentration. The highest sensitivity can reach 43 Ω/T at very low magnetic field. This increase of Hall sensitivity is caused by the occurrence of anomalous HE (AHE) after ferromagnetic phase transition. Our work indicates that the magnetic-element-doped TIs with AHE are good candidates for HE sensors.« less

  8. Stabilization of weak ferromagnetism by strong magnetic response to epitaxial strain in multiferroic BiFeO3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Cooper, Valentino R.; Lee, Jun Hee; Krogel, Jaron T.; Okamoto, Satoshi; Dixit, Hemant M.

    2015-08-06

    Multiferroic BiFeO3 exhibits excellent magnetoelectric coupling critical for magnetic information processing with minimal power consumption. Thus, the degenerate nature of the easy spin axis in the (111) plane presents roadblocks for real world applications. Here, we explore the stabilization and switchability of the weak ferromagnetic moments under applied epitaxial strain using a combination of first-principles calculations and group-theoretic analyses. We demonstrate that the antiferromagnetic moment vector can be stabilized along unique crystallographic directions ([110] and [-110]) under compressive and tensile strains. A direct coupling between the anisotropic antiferrodistortive rotations and Dzyaloshinskii-Moria interactions drives the stabilization of weak ferromagnetism. Furthermore, energeticallymore » competing C- and G-type magnetic orderings are observed at high compressive strains, suggesting that it may be possible to switch the weak ferromagnetism on and off under application of strain. These findings emphasize the importance of strain and antiferrodistortive rotations as routes to enhancing induced weak ferromagnetism in multiferroic oxides.« less

  9. Reduced Magnetization and Loss in Ag-Mg Sheathed Bi2212 Wires: Systematics With Sample Twist Pitch and Length

    SciTech Connect (OSTI)

    Myers, C. S.; Susner, M. A.; Miao, H.; Huang, Y.; Sumption, M. D.; Collings, E. W.

    2014-11-20

    Suppression of magnetization and effective filament diameter (deff) with twisting was investigated for a series of recent Bi2212 strands manufactured by Oxford Superconducting Technologies. We measured magnetization as a function of field (out to 14 T), at 5.1 K, of twisted and nontwisted 37 18 double restack design strands. The samples were helical coils 5-6 mm in height and approximately 5 mm in diameter. The strand diameter was 0.8 mm. The magnetization of samples having twist pitches of 25.4, 12.7, and 6.35 mm were examined and compared to nontwisted samples of the same filament configuration. The critical state model was used to extract the 12-T deff from magnetization data for comparison. Twisting the samples reduced deff by a factor of 1.5-3. The deff was shown to increase both with L and Lp. Mathematical expressions, based upon the anisotropic continuum model, were fit to the data, and a parameter ?2, which quantifies the electrical connectivity perpendicular to the filament axis, was extracted. The bundle-to-bundle connectivity along the radial axis was found to be approximately 0.2%. The deff was substantially reduced with Lp. In addition, the importance of understanding sample length dependence for quantitative measurements is discussed.

  10. Geometry-dependent penetration fields in superconducting Bi2Sr2CaCu2O8+? platelets

    SciTech Connect (OSTI)

    By: Curran, P. J.; Clem, J. R.; Bending, S. J.; Tsuchiya, Y.; Tamegai, T.

    2010-10-01

    Magneto-optical imaging has been used to study vortex penetration into regular polygon-shaped Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} platelets with various geometries (disks, pentagons, squares, and triangles) but known fixed areas. In all cases we observe an exponential dependence of the field of first penetration, H{sub p}, on temperature, consistent with a dominant Bean-Livingston barrier for pancake vortices at our measurement temperatures (45-80 K). However, the penetration field consistently decreases with decreasing degree of sample symmetry, in stark contrast to conventional estimates of demagnetization factors using equivalent ellipsoids based on inscribed circles, which predict the reverse trend. Surprisingly, this observation does not appear to have been reported in the literature before. We demonstrate empirically that estimates using equivalent ellipsoids based on circumscribed circles predict the correct qualitative experimental trend in H{sub p}. Our work has important implications for the estimation of appropriate effective demagnetization factors for flux penetration into arbitrarily shaped superconducting bodies.

  11. Geometry-dependent penetration fields of superconducting Bi2Sr2CaCu2O8+? platelets

    SciTech Connect (OSTI)

    Curran, P. J.; Clem, J. R.; Bending, S. J.; Tsuchiya, Y.; Tamegai, T.

    2010-10-01

    Magneto-optical imaging has been used to study vortex penetration into regular polygon-shaped Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} platelets with various geometries (disks, pentagons, squares, and triangles) but known fixed areas. In all cases we observe an exponential dependence of the field of first penetration, H{sub p}, on temperature, consistent with a dominant Bean-Livingston barrier for pancake vortices at our measurement temperatures (45-80 K). However, the penetration field consistently decreases with decreasing degree of sample symmetry, in stark contrast to conventional estimates of demagnetization factors using equivalent ellipsoids based on inscribed circles, which predict the reverse trend. Surprisingly, this observation does not appear to have been reported in the literature before. We demonstrate empirically that estimates using equivalent ellipsoids based on circumscribed circles predict the correct qualitative experimental trend in Hp. Our work has important implications for the estimation of appropriate effective demagnetization factors for flux penetration into arbitrarily shaped superconducting bodies.

  12. Reduced Magnetization and Loss in Ag-Mg Sheathed Bi2212 Wires: Systematics With Sample Twist Pitch and Length

    SciTech Connect (OSTI)

    Myers, C. S.; Susner, M. A.; Miao, H.; Huang, Y.; Sumption, M. D.; Collings, E. W.

    2014-11-20

    Suppression of magnetization and effective filament diameter (deff) with twisting was investigated for a series of recent Bi2212 strands manufactured by Oxford Superconducting Technologies. We measured magnetization as a function of field (out to 14 T), at 5.1 K, of twisted and nontwisted 37 × 18 double restack design strands. The samples were helical coils 5-6 mm in height and approximately 5 mm in diameter. The strand diameter was 0.8 mm. The magnetization of samples having twist pitches of 25.4, 12.7, and 6.35 mm were examined and compared to nontwisted samples of the same filament configuration. The critical state model was used to extract the 12-T deff from magnetization data for comparison. Twisting the samples reduced deff by a factor of 1.5-3. The deff was shown to increase both with L and Lp. Mathematical expressions, based upon the anisotropic continuum model, were fit to the data, and a parameter γ2, which quantifies the electrical connectivity perpendicular to the filament axis, was extracted. The bundle-to-bundle connectivity along the radial axis was found to be approximately 0.2%. The deff was substantially reduced with Lp. In addition, the importance of understanding sample length dependence for quantitative measurements is discussed.

  13. High-resolution x-ray diffraction study of the heavy-fermion compound YbBiPt

    SciTech Connect (OSTI)

    Ueland, B. G.; Saunders, S. M.; Bud'ko, S. L.; Schmiedeshoff, G. M.; Canfield, P. C.; Kreyssig, A.; Goldman, A. I.

    2015-11-30

    In this study, YbBiPt is a heavy-fermion compound possessing significant short-range antiferromagnetic correlations below a temperature of T*=0.7K, fragile antiferromagnetic order below TN = 0.4K, a Kondo temperature of TK ? 1K, and crystalline-electric-field splitting on the order of E/kB = 1 10K. Whereas the compound has a face-centered-cubic lattice at ambient temperature, certain experimental data, particularly those from studies aimed at determining its crystalline-electric-field scheme, suggest that the lattice distorts at lower temperature. Here, we present results from high-resolution, high-energy x-ray diffraction experiments which show that, within our experimental resolution of ? 6 10 105 , no structural phase transition occurs between T = 1.5 and 50 K. In combination with results from dilatometry measurements, we further show that the compound's thermal expansion has a minimum at ? 18 K and a region of negative thermal expansion for 9 ? T ? 18 K. Despite diffraction patterns taken at 1.6 K which indicate that the lattice is face-centered cubic and that the Yb resides on a crystallographic site with cubic point symmetry, we demonstrate that the linear thermal expansion may be modeled using crystalline-electric-field level schemes appropriate for Yb3+ residing on a site with either cubic or less than cubic point symmetry.

  14. Strain tuning of electronic structure in Bi4Ti3O12-LaCoO3 epitaxial thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Choi, Woo Seok; Lee, Ho Nyung

    2015-05-08

    In this study, we investigated the crystal and electronic structures of ferroelectric Bi4Ti3O12 single-crystalline thin films site-specifically substituted with LaCoO3 (LCO). The epitaxial films were grown by pulsed laser epitaxy on NdGaO3 and SrTiO3 substrates to vary the degree of strain. With increasing the LCO substitution, we observed a systematic increase in the c-axis lattice constant of the Aurivillius phase related with the modification of pseudo-orthorhombic unit cells. These compositional and structural changes resulted in a systematic decrease in the band gap, i.e., the optical transition energy between the oxygen 2p and transition-metal 3d states, based on a spectroscopic ellipsometrymore » study. In particular, the Co 3d state seems to largely overlap with the Ti t2g state, decreasing the band gap. Interestingly, the applied tensile strain facilitates the band-gap narrowing, demonstrating that epitaxial strain is a useful tool to tune the electronic structure of ferroelectric transition-metal oxides.« less

  15. Photovoltaic effect in an indium-tin-oxide/ZnO/BiFeO{sub 3}/Pt heterostructure

    SciTech Connect (OSTI)

    Fan, Zhen; Yao, Kui E-mail: msewangj@nus.edu.sg; Wang, John E-mail: msewangj@nus.edu.sg

    2014-10-20

    We have studied the photovoltaic effect in a metal/semiconductor/ferroelectric/metal heterostructure of In{sub 2}O{sub 3}-SnO{sub 2}/ZnO/BiFeO{sub 3}/Pt (ITO/ZnO/BFO/Pt) multilayer thin films. The heterolayered structure shows a short-circuit current density (J{sub sc}) of 340??A/cm{sup 2} and an energy conversion efficiency of up to 0.33% under blue monochromatic illumination. The photovoltaic mechanism, specifically in terms of the major generation site of photo-excited electron-hole (e-h) pairs and the driving forces for the separation of e-h pairs, is clarified. The significant increase in photocurrent of the ITO/ZnO/BFO/Pt compared to that of ITO/BFO/Pt is attributed to the abundant e-h pairs generated from ZnO. Ultraviolet photoelectron spectroscopy reveals the energy band alignment of ITO/ZnO/BFO/Pt, where a Schottky barrier and an n{sup +}-n junction are formed at the BFO/Pt and ZnO/BFO interfaces, respectively. Therefore, two built-in fields developed at the two interfaces are constructively responsible for the separation and transport of photo-excited e-h pairs.

  16. Reduced Magnetization and Loss in Ag-Mg Sheathed Bi2212 Wires: Systematics With Sample Twist Pitch and Length

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Myers, C. S.; Susner, M. A.; Miao, H.; Huang, Y.; Sumption, M. D.; Collings, E. W.

    2014-11-20

    Suppression of magnetization and effective filament diameter (deff) with twisting was investigated for a series of recent Bi2212 strands manufactured by Oxford Superconducting Technologies. We measured magnetization as a function of field (out to 14 T), at 5.1 K, of twisted and nontwisted 37 × 18 double restack design strands. The samples were helical coils 5-6 mm in height and approximately 5 mm in diameter. The strand diameter was 0.8 mm. The magnetization of samples having twist pitches of 25.4, 12.7, and 6.35 mm were examined and compared to nontwisted samples of the same filament configuration. The critical state modelmore » was used to extract the 12-T deff from magnetization data for comparison. Twisting the samples reduced deff by a factor of 1.5-3. The deff was shown to increase both with L and Lp. Mathematical expressions, based upon the anisotropic continuum model, were fit to the data, and a parameter γ2, which quantifies the electrical connectivity perpendicular to the filament axis, was extracted. The bundle-to-bundle connectivity along the radial axis was found to be approximately 0.2%. The deff was substantially reduced with Lp. In addition, the importance of understanding sample length dependence for quantitative measurements is discussed.« less

  17. Determination of Grain Boundary Charging in Cu(In,Ga)Se2 Thin Films: Preprint

    SciTech Connect (OSTI)

    Jiang, C. S.; Contreras, M. A.; Repins, I.; Moutinho, H. R.; Noufi, R.; Al-Jassim, M. M.

    2012-06-01

    Surface potential mapping of Cu(In,Ga)Se2 (CIGS) thin films using scanning Kelvin probe force microscopy (SKPFM) aims to understand the minority-carrier recombination at the grain boundaries (GBs) of this polycrystalline material by examining GB charging, which has resulted in a number of publications. However, the reported results are highly inconsistent. In this paper, we report on the potential mapping by measuring wide-bandgap or high-Ga-content films and by using a complementary atomic force microscopy-based electrical technique of scanning capacitance microscopy (SCM). The results demonstrate consistent, positively charged GBs on our high-quality films with minimal surface defects/charges. The potential image taken on a low-quality film with a 1.2-eV bandgap shows significantly degraded potential contrast on the GBs and degraded potential uniformity on grain surfaces, resulting from the surface defects/charges of the low-quality film. In contrast, the potential image on an improved high-quality film with the same wide bandgap shows significantly improved GB potential contrast and surface potential uniformity, indicating that the effect of surface defects is critical when examining GB charging using surface potential data. In addition, we discuss the effect of the SKPFM setup on the validity of potential measurement, to exclude possible artifacts due to improper SKPFM setups. The SKPFM results were corroborated by using SCM measurements on the films with a CdS buffer layer. The SCM image shows clear GB contrast, indicating different electrical impedance on the GB from the grain surface. Further, we found that the GB contrast disappeared when the CdS window layer was deposited after the CIGS film was exposed extensively to ambient, which was caused by the creation of CIGS surface defects by the ambient exposure.

  18. Biological investigations of the Sandia National Laboratories Sol se Mete Aerial Cable Facility

    SciTech Connect (OSTI)

    Sullivan, R.M.

    1994-10-01

    This report provides results of a comprehensive biological field survey performed on the Sandia National Laboratories Aerial Cable Facility, at the east end of Kirtland Air Force Base (KAFB), Bernalillo County, New Mexico. This survey was conducted late September through October, 1991. ACF occupies a 440-acre tract of land withdrawn by the US Forest Service (USFS) for use by KAFB, and in turn placed under operational control of SNL by the Department of Energy (DOE). All land used by SNL for ACF is part of a 15,851-acre tract of land withdrawn by the US Forest Service. In addition, a number of different organizations use the 15,851-acre area. The project area used by SNL encompasses portions of approximately six sections (3,840 acres) of US Forest Service land located within the foothills of the west side of the Manzano Mountains (East Mesa). The biological study area is used by the KAFB, the US Department of Interior, and SNL. This area includes: (1) Sol se Mete Springs and Canyon, (2) East Anchor Access Road, (3) East Anchor Site, (4) Rocket Sled Track, (5) North Arena, (6) East Instrumentation Site and Access Road, (7) West Anchor Access Road, (8) West Anchor Site, (9) South Arena, (10) Winch Sites, (11) West Instrumentation Sites, (12) Explosive Assembly Building, (13) Control Building, (14) Lurance Canyon Road and vicinity. Although portions of approximately 960 acres of withdrawn US Forest Service land have been altered, only 700 acres have been disturbed by activities associated with ACF; approximately 2,880 acres consist of natural habitat. Absence of grazing by livestock and possibly native ungulates, and relative lack of human disturbance have allowed this area to remain in a more natural vegetative state relative to the condition of private range lands throughout New Mexico. This report evaluates threatened and endangered species found on ACF, as well as a comprehensive assessment of biological habitats.

  19. High field magnetotransport and point contact Andreev reflection measurements on CuCr{sub 2}Se{sub 4} and CuCr{sub 2}Se{sub 3}BrDegenerate magnetic semiconductor single crystals

    SciTech Connect (OSTI)

    Borisov, K. Coey, J. M. D.; Stamenov, P.; Alaria, J.

    2014-05-07

    Single crystals of the metallically degenerate fully magnetic semiconductors CuCr{sub 2}Se{sub 4} and CuCr{sub 2}Se{sub 3}Br have been prepared by the Chemical Vapour Transport method, using either Se or Br as transport agents. The high-quality, millimetre-sized, octahedrally faceted, needle- and platelet-shaped crystals are characterised by means of high field magnetotransport (?{sub 0}H? 14?T) and Point Contact Andreev Reflection. The relatively high spin polarisation observed |P|>0.56, together with the relatively low minority carrier effective mass of 0.25 m{sub e}, and long scattering time 10{sup ?13}?s, could poise these materials for integration in low- and close-to-room temperature minority injection bipolar heterojunction transistor demonstrations.

  20. Sustained phase separation and spin glass in Co-doped KxFe2-ySe2 single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ryu, Hyejin; Wang, Kefeng; Opacic, M.; Lazarevic, N.; Warren, J. B.; Popovic, Z. V.; Bozin, Emil S.; Petrovic, C.

    2015-11-19

    We describe Co substitution effects in KxFe2-y-zCozSe2 (0.06 ≤ z ≤ 1.73) single crystal alloys. By 3.5% of Co doping superconductivity is suppressed whereas phase separation of semiconducting K2Fe4Se5 and superconducting/metallic KxFe2Se2 is still present. We show that the arrangement and distribution of superconducting phase (stripe phase) is connected with the arrangement of K, Fe and Co atoms. Semiconducting spin glass is found in proximity to superconducting state, persisting for large Co concentrations. At high Co concentrations ferromagnetic metallic state emerges above the spin glass. This is coincident with changes of the unit cell, arrangement and connectivity of stripemore » conducting phase.« less

  1. Quasiparticle interference, quasiparticle interactions, and the origin of the charge density wave in 2H-NbSe?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Arguello, C. J.; Valla, T.; Rosenthal, E. P.; Andrade, E. F.; Jin, W.; Yeh, P. C.; Zaki, N.; Jia, S.; Cava, R. J.; Fernandes, R. M.; et al

    2015-01-20

    We show that a small number of intentionally introduced defects can be used as a spectroscopic tool to amplify quasiparticle interference in 2H-NbSe?, that we measure by scanning tunneling spectroscopic imaging. We show from the momentum and energy dependence of the quasiparticle interference that Fermi surface nesting is inconsequential to charge density wave formation in 2H-NbSe?. We demonstrate that by combining quasiparticle interference data with additional knowledge of the quasiparticle band structure from angle resolved photoemission measurements, one can extract the wavevector and energy dependence of the important electronic scattering processes thereby obtaining direct information both about the fermiology andmorethe interactions. In 2H-NbSe?, we use this combination to show that the important near-Fermi-surface electronic physics is dominated by the coupling of the quasiparticles to soft mode phonons at a wave vector different from the CDW ordering wave vector.less

  2. Sustained phase separation and spin glass in Co-doped KxFe2?ySe2 single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ryu, Hyejin; Wang, Kefeng; Opacic, M.; Lazarevic, N.; Warren, J. B.; Popovic, Z. V.; Bozin, Emil S.; Petrovic, C.

    2015-11-19

    We describe Co substitution effects in KxFe2-y-zCozSe2 (0.06 ? z ? 1.73) single crystal alloys. By 3.5% of Co doping superconductivity is suppressed whereas phase separation of semiconducting K2Fe4Se5 and superconducting/metallic KxFe2Se2 is still present. We show that the arrangement and distribution of superconducting phase (stripe phase) is connected with the arrangement of K, Fe and Co atoms. Semiconducting spin glass is found in proximity to superconducting state, persisting for large Co concentrations. At high Co concentrations ferromagnetic metallic state emerges above the spin glass. This is coincident with changes of the unit cell, arrangement and connectivity of stripemoreconducting phase.less

  3. NaYF{sub 4}:Er,Yb/Bi{sub 2}MoO{sub 6} core/shell nanocomposite: A highly efficient visible-light-driven photocatalyst utilizing upconversion

    SciTech Connect (OSTI)

    Sun, Yuanyuan; Wang, Wenzhong Sun, Songmei; Zhang, Ling

    2014-04-01

    Highlights: Design and synthesis of NaYF{sub 4}:Er,Yb/Bi{sub 2}MoO{sub 6} based on upconversion. NaYF{sub 4}:Er,Yb/Bi{sub 2}MoO{sub 6} nanocomposite was prepared for the first time. Coreshell structure benefits the properties. Upconversion contributed to the enhanced photocatalytic activity. Helps to understand the functionality of new type photocatalysts. - Abstract: NaYF{sub 4}:Er,Yb/Bi{sub 2}MoO{sub 6} core/shell nanocomposite was designed and prepared for the first time based on upconversion. The products were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), high resolution TEM (HRTEM), energy dispersive X-ray spectroscopy (EDS) and diffuse reflectance spectra (DRS). The results revealed that the as-synthesized NaYF{sub 4}:Er,Yb/Bi{sub 2}MoO{sub 6} consisted of spheres with a core diameter of about 26 nm and a shell diameter of around 6 nm. The core was upconversion illuminant NaYF{sub 4}:Er,Yb and the shell was Bi{sub 2}MoO{sub 6} around the core, which was confirmed by EDS. The NaYF{sub 4}:Er,Yb/Bi{sub 2}MoO{sub 6} exhibited higher photocatalytic activity for the photodecomposition of Rhodamine B (RhB) under the irradiation of Xe lamp and green light emitting diode (g-LED). The mechanism of the high photocatalytic activity was discussed by photoluminescence spectra (PL), which is mainly attributed to upconversion of NaYF{sub 4}:Er,Yb in the NaYF{sub 4}:Er,Yb/Bi{sub 2}MoO{sub 6} nanocomposite and the coreshell structure.

  4. Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Xufan; Basile, Leonardo; Huang, Bing; Ma, Cheng; Lee, Jaekwang; Vlassiouk, Ivan V.; Puretzky, Alexander A.; Lin, Ming -Wei; Chi, Miaofang; Idrobo Tapia, Juan Carlos; et al

    2015-07-22

    Two-dimensional (2D) van der Waals (vdW) heterostructures are a family of artificially-structured materials that promise tunable optoelectronic properties for devices with enhanced functionalities. Compared to stamping, direct epitaxy of vdW heterostructures is ideal for clean interlayer interfaces and scalable device fabrication. Here, we explore the synthesis and preferred orientations of 2D GaSe atomic layers on graphene (Gr) by vdW epitaxy. Guided by the wrinkles on graphene, GaSe nuclei form that share a predominant lattice orientation. Due to vdW epitaxial growth many nuclei grow as perfectly aligned crystals and coalesce to form large (tens of microns), single-crystal flakes. Through theoretical investigationsmore » of interlayer energetics, and measurements of preferred orientations by atomic-resolution STEM and electron diffraction, a 10.9 interlayer rotation of the GaSe lattice with respect to the underlying graphene is found to be the most energetically preferred vdW heterostructure with the largest binding energy and the longest-range ordering. These GaSe/Gr vdW heterostructures exhibit an enhanced Raman E21g band of monolayer GaSe along with highly-quenched photoluminescence due to strong charge transfer. Despite the very large lattice mismatch of GaSe/Gr through vdW epitaxy, the predominant orientation control and convergent formation of large single-crystal flakes demonstrated here is promising for the scalable synthesis of large-area vdW heterostructures for the development of new optical and optoelectronic devices.« less

  5. Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene

    SciTech Connect (OSTI)

    Li, Xufan; Basile, Leonardo; Huang, Bing; Ma, Cheng; Lee, Jaekwang; Vlassiouk, Ivan V.; Puretzky, Alexander A.; Lin, Ming -Wei; Chi, Miaofang; Idrobo Tapia, Juan Carlos; Rouleau, Christopher M.; Sumpter, Bobby G.; Yoon, Mina; Geohegan, David B.; Xiao, Kai

    2015-07-22

    Two-dimensional (2D) van der Waals (vdW) heterostructures are a family of artificially-structured materials that promise tunable optoelectronic properties for devices with enhanced functionalities. Compared to stamping, direct epitaxy of vdW heterostructures is ideal for clean interlayer interfaces and scalable device fabrication. Here, we explore the synthesis and preferred orientations of 2D GaSe atomic layers on graphene (Gr) by vdW epitaxy. Guided by the wrinkles on graphene, GaSe nuclei form that share a predominant lattice orientation. Due to vdW epitaxial growth many nuclei grow as perfectly aligned crystals and coalesce to form large (tens of microns), single-crystal flakes. Through theoretical investigations of interlayer energetics, and measurements of preferred orientations by atomic-resolution STEM and electron diffraction, a 10.9 interlayer rotation of the GaSe lattice with respect to the underlying graphene is found to be the most energetically preferred vdW heterostructure with the largest binding energy and the longest-range ordering. These GaSe/Gr vdW heterostructures exhibit an enhanced Raman E21g band of monolayer GaSe along with highly-quenched photoluminescence due to strong charge transfer. Despite the very large lattice mismatch of GaSe/Gr through vdW epitaxy, the predominant orientation control and convergent formation of large single-crystal flakes demonstrated here is promising for the scalable synthesis of large-area vdW heterostructures for the development of new optical and optoelectronic devices.

  6. Van der Waals Epitaxial Growth of Single-Crystal Two-Dimensional GaSe on Graphene

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Xufan; Basile, Leonardo; Huang, Bing; Ma, Cheng; Lee, Jaekwang; Vlassiouk, Ivan V.; Puretzky, Alexander A.; Lin, Ming-Wei; Chi, Miaofang; Idrobo Tapia, Juan Carlos; et al

    2015-07-22

    Two-dimensional (2D) van der Waals (vdW) heterostructures are a family of artificially-structured materials that promise tunable optoelectronic properties for devices with enhanced functionalities. Compared to stamping, direct epitaxy of vdW heterostructures is ideal for clean interlayer interfaces and scalable device fabrication. Here, we explore the synthesis and preferred orientations of 2D GaSe atomic layers on graphene (Gr) by vdW epitaxy. Guided by the wrinkles on graphene, GaSe nuclei form that share a predominant lattice orientation. Due to vdW epitaxial growth many nuclei grow as perfectly aligned crystals and coalesce to form large (tens of microns), single-crystal flakes. Through theoretical investigationsmoreof interlayer energetics, and measurements of preferred orientations by atomic-resolution STEM and electron diffraction, a 10.9 interlayer rotation of the GaSe lattice with respect to the underlying graphene is found to be the most energetically preferred vdW heterostructure with the largest binding energy and the longest-range ordering. These GaSe/Gr vdW heterostructures exhibit an enhanced Raman E21g band of monolayer GaSe along with highly-quenched photoluminescence due to strong charge transfer. Despite the very large lattice mismatch of GaSe/Gr through vdW epitaxy, the predominant orientation control and convergent formation of large single-crystal flakes demonstrated here is promising for the scalable synthesis of large-area vdW heterostructures for the development of new optical and optoelectronic devices.less

  7. Enhancement of surface phonon modes in the Raman spectrum of ZnSe nanoparticles on adsorption of 4-mercaptopyridine

    SciTech Connect (OSTI)

    Islam, Syed K.; Lombardi, John R.

    2014-02-21

    By chemically etching a thin film of crystalline ZnSe with acid, we observe a strong Raman enhancement of the surface phonon modes of ZnSe on adsorption of a molecule (4-mercaptopyridine). The surface is composed of oblate hemi-ellipsoids, which has a large surface-to-bulk ratio. The assignment of the observed modes (at 248 and 492 cm{sup ?1}) to a fundamental and first overtone of the surface optical mode is consistent with observations from high-resolution electron energy loss spectroscopy as well as calculations.

  8. Polarization-Driven Stark Shifts in Quantum Dot Luminescence from Single CdSe/oligo-PPV Nanoparticles

    SciTech Connect (OSTI)

    Early, K. T.; Sudeep, P. K.; Emrick, Todd; Barnes, M. D.

    2010-05-12

    We demonstrate polarization-induced spectral shifts and associated linearly polarized absorption and emission in single CdSe/oligo-(phenylene vinylene) (CdSe/OPV) nanoparticles. A mechanism for these observations is presented in which charge separation from photoexcited ligands results in a significant Stark distortion of the quantum dot electron/hole wavefunctions. This distortion results in an induced linear polarization and an associated red shift in band-edge photoluminescence. These studies suggest the use of single quantum dots as local charge mobility probes.

  9. Role of double Ti O 2 layers at the interface of FeSe/ SrTi O 3

    Office of Scientific and Technical Information (OSTI)

    superconductors (Journal Article) | SciTech Connect SciTech Connect Search Results Journal Article: Role of double Ti O 2 layers at the interface of FeSe/ SrTi O 3 superconductors Citation Details In-Document Search This content will become publicly available on May 16, 2017 Title: Role of double Ti O 2 layers at the interface of FeSe/ SrTi O 3 superconductors Authors: Zou, Ke ; Mandal, Subhasish ; Albright, Stephen D. ; Peng, Rui ; Pu, Yujia ; Kumah, Divine ; Lau, Claudia ; Simon, Georg H.

  10. Electro-optical and dielectric properties of CdSe quantum dots and 6CHBT liquid crystals composites

    SciTech Connect (OSTI)

    Singh, U. B.; Pandey, M. B.; Dhar, R; Pandey, A. S.; Kumar, S.; Dabrowski, R.

    2014-11-15

    We have prepared the composites of a room temperature nematic liquid crystal namely 4-(trans-4-n-hexylcyclohexyl) isothiocyanatobenzoate (6CHBT) and Cadmium Selenide Quantum Dots (CdSe-QDs) and investigated their electro-optical and dielectric properties. Effect of dispersion of CdSe-QDs on various electro-optical and display parameters of host liquid crystalline material have been studied. Physical parameters, such as switching threshold voltage and splay elastic constant have been altered drastically for composites. Dispersion of QDs in a liquid crystals medium destabilizes nematic ordering of the host and decreases the nematic-to-isotropic transition temperature.

  11. Role of double Ti O 2 layers at the interface of FeSe/ SrTi O 3

    Office of Scientific and Technical Information (OSTI)

    superconductors (Journal Article) | DOE PAGES Publisher's Accepted Manuscript: Role of double Ti O 2 layers at the interface of FeSe/ SrTi O 3 superconductors This content will become publicly available on May 16, 2017 « Prev Next » Title: Role of double Ti O 2 layers at the interface of FeSe/ SrTi O 3 superconductors Authors: Zou, Ke ; Mandal, Subhasish ; Albright, Stephen D. ; Peng, Rui ; Pu, Yujia ; Kumah, Divine ; Lau, Claudia ; Simon, Georg H. ; Dagdeviren, Omur E. ; He, Xi ;

  12. Reduced Cu(InGa)Se2 Thickness in Solar Cells Using a Superstrate Configuration

    SciTech Connect (OSTI)

    Shafarman, William N.

    2015-03-30

    This project by the Institute of Energy Conversion (IEC) and the Department of Electrical and Computer Engineering at the University of Delaware sought to develop the technology and underlying science to enable reduced cost of Cu(InGa)Se2 manufacturing by reducing the thickness of the Cu(InGa)Se2 absorber layer by half compared to typical production. The approach to achieve this was to use the superstrate cell configuration in which light is incident on the cell through the glass. This structure facilitates optical enhancement approaches needed to achieve high efficiency with Cu(InGa)Se2 thicknesses less than 1 µm. The primary objective was to demonstrate a Cu(InGa)Se2 cell with absorber thickness 0.5 - 0.7 µm and 17% efficiency, along with a quantitative loss analysis to define a pathway to 20% efficiency. Additional objectives were the development of stable TCO and buffer layers or contact layers to withstand the Cu(InGa)Se2 deposition temperature and of advanced optical enhancement methods. The underlying fundamental science needed to effectively transition these outcomes to large scale was addressed by extensive materials and device characterization and by development of comprehensive optical models. Two different superstrate configurations have been investigated. A frontwall cell is illuminated through the glass to the primary front junction of the device. This configuration has been used for previous efforts on superstrate Cu(InGa)Se2 but performance has been limited by interdiffusion or reaction with CdS or other buffer layers. In this project, several approaches to overcome these limitations were explored using CdS, ZnO and ZnSe buffer layers. In each case, mechanisms that limit device performance were identified using detailed characterization of the materials and junctions. Due to the junction formation difficulties, efforts were concentrated on a new backwall configuration in which light is incident through the substrate into the back of the absorber layer. The primary junction is then formed after Cu(InGa)Se2 deposition. This allows the potential benefits of superstrate cells for optical enhancement while maintaining processing advantages of the substrate configuration and avoiding the harmful effects of high temperature deposition on p-n junction formation. Backwall devices have outperformed substrate cells at absorber thicknesses of 0.1-0.5 µm through enhanced JSC due to easy incorporation of a Ag reflector and, with light incident on the absorber, the elimination of parasitic absorption in the CdS buffer. An efficiency of 9.7% has been achieved for a backwall Cu(InGa)Se2 device with absorber thickness ~0.4 μm. A critical achievement that enabled implementation of the backwall cell was the development of a transparent back contact using MoO3 or WO3. Processes for controlled deposition of each material by reactive rf sputtering from metal targets were developed. These contacts have wide bandgaps making them well-suited for application as contacts for backwall devices as well as potential use in bifacial cells and as the top cell of tandem CuInSe2-based devices. Optical enhancement will be critical for further improvements. Wet chemical texturing of ZnO films has been developed for a simple, low cost light-trapping scheme for backwall superstrate devices to enhance long wavelength quantum efficiency. An aqueous oxalic acid etch was developed and found to strongly texture sputtered ZnO with high haze ≈ 0.9 observed across the whole spectrum. And finally, advanced optical models have been developed to assist the characterization and optimization of Cu(InGa)Se2 cells with thin absorbers

  13. Comparative Gamma Spectroscopy with SrI2(Eu), GYGAG(Ce) and Bi-loaded Plastic Scintillators

    SciTech Connect (OSTI)

    Cherepy, N J

    2010-11-19

    We are developing new scintillator materials that offer potential for high resolution gamma ray spectroscopy at low cost. Single crystal SrI{sub 2}(Eu) offers {approx}3% resolution at 662 keV, in sizes of {approx}1 in{sup 3}. We have developed ceramics processing technology allowing us to achieve cubic inch scale transparent ceramic scintillators offering gamma spectroscopy performance superior to NaI(Tl). We fabricated a bismuth-loaded plastic scintillator that demonstrates energy resolution of {approx}8% at 662 keV in small sizes. Gamma ray spectroscopy can be used to identify the presence of weak radioactive sources within natural background. The ability to discriminate close-lying spectral lines is strongly dependent upon the energy resolution of the detector. In addition to excellent energy resolution, large volume detectors are needed to acquire sufficient events, for example, to identify a radioactive anomaly moving past a detector. We have employed a 'directed search' methodology for identifying potential scintillator materials candidates, resulting in the discovery of Europium-doped Strontium Iodide, SrI{sub 2}(Eu), Cerium-doped Gadolinium Garnet, GYGAG(Ce), and Bismuth-loaded Polymers. These scintillators possess very low self-radioactivity, offer energy resolution of 3-8% at 662 keV, and have potential to be grown cost-effectively to sizes similar to the most widely deployed gamma spectroscopy scintillator, Thallium-doped Sodium Iodide, NaI(Tl). In this study, gamma ray spectra of a variety of sources, were obtained employing SrI{sub 2}(Eu), GYGAG(Ce), Bi-loaded polymers, LaBr{sub 3}(Ce), and NaI(Tl). The effects of detector size, energy resolution, and background radioactivity (including self-radioactivity) on the ability to distinguish weak sources is quantified, based on a simple model, and qualitatively compared to laboratory data.

  14. High-resolution x-ray diffraction study of the heavy-fermion compound YbBiPt

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ueland, B. G.; Iowa State Univ., Ames, IA; Saunders, S. M.; Iowa State Univ., Ames, IA; Bud'ko, S. L.; Iowa State Univ., Ames, IA; Schmiedeshoff, G. M.; Canfield, P. C.; Iowa State Univ., Ames, IA; Kreyssig, A.; et al

    2015-11-30

    In this study, YbBiPt is a heavy-fermion compound possessing significant short-range antiferromagnetic correlations below a temperature of T*=0.7K, fragile antiferromagnetic order below TN = 0.4K, a Kondo temperature of TK ≈ 1K, and crystalline-electric-field splitting on the order of E/kB = 1 – 10K. Whereas the compound has a face-centered-cubic lattice at ambient temperature, certain experimental data, particularly those from studies aimed at determining its crystalline-electric-field scheme, suggest that the lattice distorts at lower temperature. Here, we present results from high-resolution, high-energy x-ray diffraction experiments which show that, within our experimental resolution of ≈ 6 – 10 × 10–5 Å,more » no structural phase transition occurs between T = 1.5 and 50 K. In combination with results from dilatometry measurements, we further show that the compound's thermal expansion has a minimum at ≈ 18 K and a region of negative thermal expansion for 9 ≲ T ≲ 18 K. Despite diffraction patterns taken at 1.6 K which indicate that the lattice is face-centered cubic and that the Yb resides on a crystallographic site with cubic point symmetry, we demonstrate that the linear thermal expansion may be modeled using crystalline-electric-field level schemes appropriate for Yb3+ residing on a site with either cubic or less than cubic point symmetry.« less

  15. Photoluminescence Enhancement in CdSe/ZnSDNA linkedAu Nanoparticle Heterodimers Probed by Single Molecule Spectroscopy

    SciTech Connect (OSTI)

    Cotlet, M.; Maye, M.M.; Gang, O.

    2010-07-26

    Photoluminescence enhancement of up to 20 fold is demonstrated at the single molecule level for heterodimers composed of a core/shell CdSe/ZnS semiconductive quantum dot and a gold nanoparticle of 60 nm size separated by a 32 nm-long dsDNA linker when employing optical excitation at wavelengths near the surface plasmon resonance of the gold nanoparticle.

  16. Connecting Thermoelectric Performance and Topological-Insulator...

    Office of Scientific and Technical Information (OSTI)

    Publisher's Accepted Manuscript: Connecting Thermoelectric Performance and Topological-Insulator Behavior: BiTe and BiTeSe from First Principles Prev Next Title: ...

  17. Microstructure and electrical properties in W/Nb co-doped Aurivillius phase Bi{sub 4}Ti{sub 3}O{sub 12} piezoelectric ceramics

    SciTech Connect (OSTI)

    Peng, Zhihang; Chen, Qiang; Chen, Yu; Xiao, Dingquan; Zhu, Jianguo

    2014-11-15

    Highlights: • W/Nb codoped BIT ceramics were prepared by the mixed oxides route. • High nd{sup 0} electronic configuration of W/Nb reduces the lattice distortion and T{sub C}. • Oxygen vacancy is responsible for dielectric relaxation and DC conduction process. • W/Nb additives significantly enhanced the piezoelectric coefficient d{sub 33} value. • BWNb-10 ceramics possessed large remnant polarization and a wide sintering window. - Abstract: Aurivillius-type Bi{sub 4}Ti{sub 3-x}W{sub x/2}Nb{sub x/2}O{sub 12} ceramics were prepared by a conventional solid-state sintering method. The XRD patterns demonstrated that all compositions were a single three layered crystalline structure, involving a reduction of lattice distortion with an increase in W/Nb doping level. The electrical properties including dielectric, electrical conduction and piezoelectric properties were tailored by W/Nb additives. The Curie-temperature decreased, whereas the electrical resistivity drastically increased with introduction of W/Nb donor dopants. As a result, a high electric field can be applied during the poling process. The Bi{sub 4}Ti{sub 2.9}W{sub 0.05}Nb{sub 0.05}O{sub 12} ceramics exhibited optimum piezoelectric coefficient (d{sub 33} ∼22.8 pC/N), large remnant polarization (2P{sub r} ∼26.8 μC/cm{sup 2} @ 200 °C) together with a high Curie temperature (T{sub C} ∼635 °C). Furthermore, this composition possessed a wide sintering window with outstanding piezoelectric properties. These parameters indicate that Bi{sub 4}Ti{sub 2.9}W{sub 0.05}Nb{sub 0.05}O{sub 12}-based ceramic is a promising candidate for high temperature piezoelectric applications.

  18. Change in the magnetic structure of (Bi,Sm)FeO{sub 3} thin films at the morphotropic phase boundary probed by neutron diffraction

    SciTech Connect (OSTI)

    Maruyama, Shingo; Anbusathaiah, Varatharajan; Takeuchi, Ichiro; Fennell, Amy; Enderle, Mechthild; Ratcliff, William D.

    2014-11-01

    We report on the evolution of the magnetic structure of BiFeO{sub 3} thin films grown on SrTiO{sub 3} substrates as a function of Sm doping. We determined the magnetic structure using neutron diffraction. We found that as Sm increases, the magnetic structure evolves from a cycloid to a G-type antiferromagnet at the morphotropic phase boundary, where there is a large piezoelectric response due to an electric-field induced structural transition. The occurrence of the magnetic structural transition at the morphotropic phase boundary offers another route towards room temperature multiferroic devices.

  19. Structural and dielectric properties of erbium doped BiFeO{sub 3}−PbTiO{sub 3} solid solutions

    SciTech Connect (OSTI)

    Vandana, Singh, Anupinder Singh, Lakhwant Kaur, Anumeet; Dahyia, Sajjan; Chatterjee, Ratnamala

    2014-04-24

    Single phase Er substituted at A-site BiFeO{sub 3}−PbTiO{sub 3} solid solutions were synthesized using solid state reaction route. The calcinations at different temperature reveals that the single and pure tetragonal phase formation has been accomplished at 1000°C. The SEM micrographs did not show any distinguishable change in grain size. The dielectric studies established that the dielectric constant decreases and ferroelectric T{sub c} increases with increase in Er.

  20. Manipulation of subsurface carbon nanoparticles in Bi2Sr2CaCu2O8+? using a scanning tunneling microscope

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Stollenwerk, A. J.; Hurley, N.; Beck, B.; Spurgeon, K.; Kidd, T. E.; Gu, G.

    2015-03-19

    In this study, we present evidence that subsurface carbon nanoparticles in Bi?Sr?CaCu?O8+? can be manipulated with nanometer precision using a scanning tunneling microscope. High resolution images indicate that most of the carbon particles remain subsurface after transport observable as a local increase in height as the particle pushes up on the surface. Tunneling spectra in the vicinity of these protrusions exhibit semiconducting characteristics with a band gap of approximately 1.8 eV, indicating that the incorporation of carbon locally alters the electronic properties near the surface.