Sample records for bay ga bangor

  1. Naval submarine base Kings Bay and Bangor soil evaluations.

    SciTech Connect (OSTI)

    Holcomb, David Joseph; Patteson, Raymond; Wesenberg, Donald L.; Attaway, Stephen W.

    2004-08-01T23:59:59.000Z

    This report provides soil evaluation and characterization testing for the submarine bases at Kings Bay, Georgia, and Bangor, Washington, using triaxial testing at high confining pressures with different moisture contents. In general, the samples from the Bangor and Kings Bay sites appeared to be stronger than a previously used reference soil. Assuming the samples of the material were representative of the material found at the sites, they should be adequate for use in the planned construction. Since soils can vary greatly over even a small site, a soil specification for the construction contractor would be needed to insure that soil variations found at the site would meet or exceed the requirements. A suggested specification for the Bangor and Kings Bay soils was presented based on information gathered from references plus data obtained from this study, which could be used as a basis for design by the construction contractor.

  2. EIS-0166: Bangor Hydro-Electric Transmission Line, Maine

    Broader source: Energy.gov [DOE]

    The Department of Energy prepared this environmental impact statement while considering whether to authorize a Presidential permit for Bangor Hydro to construct a new electric transmission facility at the U.S. border with Canada.

  3. Bangor Hydro Electric Company- Residential and Small Commercial Heat Pump Program (Maine)

    Broader source: Energy.gov [DOE]

    Bangor Hydro Electric Company offers a two-tiered incentive program for residential and small commercial customers. Mini-Split Heat Pumps are eligible for a rebate of $600, as well as a loan to...

  4. Chester (Mississippian) ostracodes from Bangor Formation of Black Warrior basin, northern Alabama

    SciTech Connect (OSTI)

    Devery, H.; Dewey, C.

    1986-05-01T23:59:59.000Z

    A previously unreported ostracode fauna is described from the Bangor Limestone in Franklin, Lawrence, and Colbert Counties, Alabama. The Bangor formation is a Chesterian (Mississippian) platformal carbonate sequence. The predominant carbonates are bioclastic and oolitic grainstones to wackestones with less abundant micritic claystones. Intercalated fine clastics are common in the upper and lower parts of the sequence. This study focuses on the bioclastic limestones with interbedded shales of the lower Bangor. The megafaunal associations include crinoid and blastoid pelmatozoans, orthotetid, and spiriferid brachiopids, and both fenestrate and nonfenestrate bryozoans. Solitary rugose corals and trilobites may be locally abundant. Gastropods and bivalves form a consistent but accessory part of the fauna, which indicates a shallow, nearshore shelf environment. A diverse ostracode fauna of variable abundance has been collected from the shaly units and friable limestones. The ostracode fauna indicates shallow, open-marine conditions and is dominated by bairdiaceans, including Bairdia spp. Rectobairdia and Bairdiacypris. Several species of Cavellina, healdia, and Seminolites are also abundant. Palaeocopids present include Coryellina, Kirkbya, and Polytylites. Kloedenellaceans include Beyrichiopsis, Glyptopleura, Glypotpleurina, and .Hypotetragona. Paraparchitaceans are notably more scarce, but specimens of Shishaella have been found. Some sample have a high valve to carapace ratio, suggesting postmortem transport. Although diversity is high, numerical abundances can be low. Initial studies suggest the ostracodes have a Mid-Continent affinity, which may indicate that the Appalachians were acting as a barrier to migration of European forms.

  5. 12827Federal Register / Vol. 77, No. 42 / Friday, March 2, 2012 / Notices National Grid Transmission Services Corporation Bangor Hydro Electric Company .............................................. Docket No. EL1149000.

    E-Print Network [OSTI]

    . Cooperating agencies: Federal, state, local, and tribal agencies with jurisdiction and/or special expertise12827Federal Register / Vol. 77, No. 42 / Friday, March 2, 2012 / Notices National Grid Transmission Services Corporation Bangor Hydro Electric Company

  6. Record of Decision for the Presidential Permit, PP-89, for Bangor Hydro-Electric Company (DOE/EIS-0116) (1/25/96)

    SciTech Connect (OSTI)

    N /A

    1996-01-25T23:59:59.000Z

    Bangor Hydro applied to the DOE for a Presidential permit to construct a new electric transmission facility at the U.S. border with Canada. That action was determined to be ''a major federal action, significantly affecting the quality of the human environment'' within the meaning of NEPA. An EIS was issued on August 18, 1995, that considered the environmental impacts associated with granting or denying the Presidential permit. This ROD determined that allowing construction of the new electric facilities along alternative transmission line corridors and the options for alternative energy supplies discussed in the EIS did not prove preferable to granting the Presidential permit for construction along the proposed route.

  7. Regional stratigraphy, depositional environments, and tectonic framework of Mississippian clastic rocks between Tuscumbia and Bangor Limestones in Black Warrior basin of Alabama and Mississippi

    SciTech Connect (OSTI)

    Higginbotham, D.R.

    1986-09-01T23:59:59.000Z

    Detailed correlations in the subsurface and outcrop of northern Alabama document that Mississippian clastic rocks between the Tuscumbia and Bangor Limestones are thickest along a band across the northern and eastern parts of the Black Warrior basin. The interval thins markedly southeastward across a northeast-trending line in Monroe County, Mississippi, and Lamar County, Alabama, from more than 350 ft to less than 150 ft. The thickness distribution suggests synsedimentary differential subsidence of crustal blocks. The northeast-trending block boundary in the Black Warrior basin nearly parallels an interpreted northeast-trending late Precambrian rift segment farther southeast. The northwest-striking boundary closely parallels an interpreted northwest-trending transform fault farther southwest. The block boundaries are interpreted as basement faults that originated during late Precambrian rifting. Subsequently, the older faults were reactivated by convergenced during the Mississippian, simultaneously with the initial dispersal of clastic sediment into the Black Warrior foreland basin.

  8. PP-89 Bangor

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33Frequently Asked QuestionsDepartmentGas and OilGeothermal andof Fuels P -1 1

  9. university-logo Bayes's theorem

    E-Print Network [OSTI]

    McCullagh, Peter

    university-logo Bayes's theorem Poisson processes Improper mixtures and Bayes's theorem Peter Mc McCullagh Improper mixtures #12;university-logo Bayes's theorem Poisson processes Outline 1 BayesCullagh Improper mixtures #12;university-logo Bayes's theorem Poisson processes Improper mixtures Bayes's theorem

  10. San Diego Bay Bibliography

    E-Print Network [OSTI]

    Brueggeman, Peter

    1994-01-01T23:59:59.000Z

    oil-fired steam-electric stations (South Bay, Silvergate, and Encina); their pH adjustment and clarification, sludge

  11. RICHMOND BAY CAMPUS RICHMOND BAY CAMPUS

    E-Print Network [OSTI]

    Lee, Jason R.

    will be excavated in advance of Phase 1 development. · Other soil contamination at the RFS to be managed CAMPUS #12;RICHMOND BAY CAMPUS #12;RICHMOND BAY CAMPUS Multi-Modal Access · Transportation Demand Management program would be in place prior to completion of first phase development, with priority

  12. Biofuels development in Maine: Using trees to oil the wheels of sustainability -Maine news, sports, obituaries, weather -Bangor Daily News http://bangordailynews.com/2013/03/12/opinion/biofuels-development-in-maine-using-trees-to-oil-the-wheels-of-sustain

    E-Print Network [OSTI]

    Thomas, Andrew

    Biofuels development in Maine: Using trees to oil the wheels of sustainability - Maine news, sports, obituaries, weather - Bangor Daily News http://bangordailynews.com/2013/03/12/opinion/biofuels-development-in-maine-using-trees-to-oil-the-wheels-of-sustainability/print/[3/13/2013 1:54:43 PM] Biofuels development

  13. San Diego Bay Bibliography

    E-Print Network [OSTI]

    Brueggeman, Peter

    1994-01-01T23:59:59.000Z

    South Bay Power Plant, San Diego, California. Woodward-Station B Power Plant in San Diego, California, operated byPower Plant Receiving Water Monitoring Program. Prepared for the California

  14. Nonlinear Wavelet Shrinkage With Bayes Rules and Bayes Brani Vidakovic

    E-Print Network [OSTI]

    West, Mike

    Nonlinear Wavelet Shrinkage With Bayes Rules and Bayes Factors Brani Vidakovic 1 #12; Brani, associate editor, and the two anonymous referees for insightful comments. 2 #12; Wavelet shrinkage of denoising data. Shrinking wavelet coefficients was proposed from several optimality criteria

  15. Chesapeake Bay Restoration Act (Maryland)

    Broader source: Energy.gov [DOE]

    This legislation sets limits on development near Chesapeake Bay as well as on dredging and the deposition of dredged material into the bay. The legislation establishes the Cox Creek Citizens...

  16. Cedar Bay overview

    SciTech Connect (OSTI)

    Garvey, J.F.

    1994-12-31T23:59:59.000Z

    The Cedar Bay Cogeneration Facility is located on the north side of Jacksonville, Florida adjacent to the Broward River and Eastport Road. The facility is co-located on a site with the Seminole Kraft Paper Mill. The facility is owned by Cedar Bay Generating Company (CBGC) Limited Partnership, managed by US Generating Company and Operated by US Operating Services Company. The engineering, procurement and construction (EPC) of the facility was contracted through Multipower Associates. Multipower is a joint venture comprised of Pyropower Corporation, National Power Development, Inc. (NPDI) and the Pritchard Corporation. Black & Veatch provided turnkey construction management services and the prime contractor was H.B. Zachry.

  17. Chesapeake Bay Preservation Programs (Multiple States)

    Broader source: Energy.gov [DOE]

    The Chesapeake Bay Program is a unique regional partnership that has led and directed the restoration of the Chesapeake Bay since 1983. The Chesapeake Bay Program partners include the states of...

  18. Field's Point Wastewater Treatment Facility (Narragansett Bay...

    Open Energy Info (EERE)

    Field's Point Wastewater Treatment Facility (Narragansett Bay Commission) Jump to: navigation, search Name Field's Point Wastewater Treatment Facility (Narragansett Bay Commission)...

  19. Draft environmental impact statement for construction and operation of the proposed Bangor Hydro-Electric Company`s second 345-kV transmission tie line to New Brunswick

    SciTech Connect (OSTI)

    NONE

    1993-10-01T23:59:59.000Z

    This Draft Environmental Impact Statement (DEIS) was prepared by the US Department of Energy (US DOE). The proposed action is the issuance of Presidential Permit PP-89 by DOE to Bangor Hydro-Electric Company to construct and operate a new international transmission line interconnection to New Brunswick, Canada that would consist of an 83.8 mile (US portion), 345-kilovolt (kV) alternating current transmission line from the US-Canadian border at Baileyville, Maine to an existing substation at Orrington, Maine. The principal environmental impacts of the construction and operation of the transmission line would be incremental in nature and would include the conversion of forested uplands (mostly commercial timberlands) and wetlands to right-of-way (small trees, shrubs, and herbaceous vegetation). The proposed line would also result in localized minor to moderate visual impacts and would contribute a minor incremental increase in the exposure of some individuals to electromagnetic fields. This DEIS documents the purpose and need for the proposed action, describes the proposed action and alternatives considered and provides a comparison of the proposed and alternatives routes, and provides detailed information on analyses of the environmental consequences of the proposed action and alternatives, as well as mitigative measures to minimize impacts.

  20. Richmond Bay Campus: Project Update

    E-Print Network [OSTI]

    Lee, Jason R.

    Coordinate with City of Richmond South Shoreline Area planning #12;Richmond Bay Campus Vision A stateRichmond Bay Campus: Project Update Prepared for the Richmond City Council October 1, 2013 #12 and UCB City of Richmond Updates Summary Questions & Answers #12;LBNL Project Update #12;University

  1. Land Cover, Land Use of twoLand Cover, Land Use of two bioluminescent bays in Puerto Ricobioluminescent bays in Puerto Ricobioluminescent bays in Puerto Ricobioluminescent bays in Puerto Rico

    E-Print Network [OSTI]

    Gilbes, Fernando

    Bay inin ViequesVieques andandLandLand aroundaround PuertoPuerto MosquitoMosquito BayBay inin ViequesVieques andand LaLa PargueraParguera BioluminescenceBioluminescence BayBay inin Lajas,Lajas, PuertoPuerto RicoBioluminescent BayBay hashas shownshown aa decreasedecrease inin itsits bioluminescencebioluminescence byby

  2. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current- spreading experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN

  3. Acoustic characteristics of bay bottom sediments in Lavaca Bay, TX

    E-Print Network [OSTI]

    Patch, Mary Catherine

    2005-08-29T23:59:59.000Z

    acoustic return of the bay bottom, and 2) strong, shallow reflectors??surface strong, mounds, buried strong, andburied multiples, which describe strong acoustic returns in the upper 5 m of stratigraphy. Within the lower package, four categories were...

  4. 11,23,1,1,,19,10,"BANGOR HYDRO ELECTRIC CO","ELLSWORTH",0,,50159,0,"A",98,,,1999,0,0,1e+15,1469,6,01179,"WAT","HY"

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National and Regional Data; Row: NAICS Codes;98,,,1999,0,0,1e+15,1469,6,01179,"WAT","HY" 11,23,1,1,,19,15,"BANGOR HYDRO

  5. Marcus Hutter -1 -Online Prediction Bayes versus Experts Online Prediction

    E-Print Network [OSTI]

    Hutter, Marcus

    Marcus Hutter - 1 - Online Prediction Bayes versus Experts Online Prediction: Bayes versus;Marcus Hutter - 2 - Online Prediction Bayes versus Experts Table of Contents Sequential/online prediction: Setup Bayesian Sequence Prediction (Bayes) Prediction with Expert Advice (PEA) PEA Bounds

  6. Jamaica Bay New York's Conflicted Backyard

    E-Print Network [OSTI]

    Columbia University

    Jamaica Bay New York's Conflicted Backyard Kevin Olsen Drew Symposium October 2008 #12;Why Study Jamaica Bay's History? Jamaica Bay has served many uses for the people of New York. At one time or another shoals, mudflats, sand bars, open water (littoral zone), intertidal zones (low and high marshes

  7. Empirical Bayes Estimation of Reliability

    E-Print Network [OSTI]

    Pensky, Marianna

    types of equipment relies on statistical inference about char- acteristics of reliabilityEmpirical Bayes Estimation of Reliability Introduction Assessment of the reliability of various such as reliability function, mean lifetime of the devices, or failure rate. Gen- eral techniques of statistical

  8. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N- GaN built-in junctions in the n-GaN layer for InGaN/GaN: N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN

  9. MODELING THE FATE AND TRANSPORT OF ATRAZINE IN THE UPPER CHESAPEAKE BAY

    E-Print Network [OSTI]

    Frei, Allan

    for agrochemicals in the Upper Chesapeake Bay. Keywords: Chesapeake Bay, hydrodynamic model, atrazine, photolysis

  10. Background Bayes Factor Simulation Study BF And PPP Using Bayes Factors for Model Selection in

    E-Print Network [OSTI]

    Wolfe, Patrick J.

    Background Bayes Factor Simulation Study BF And PPP Using Bayes Factors for Model Selection in High Study BF And PPP Model Comparison in Astrophysics Nested models (line detection in spectral analysis" to formally compare or select a model. #12;Background Bayes Factor Simulation Study BF And PPP Spectral

  11. Recent Results From The Daya Bay Experiment

    E-Print Network [OSTI]

    Chao Zhang; for the Daya Bay Collaboration

    2015-01-20T23:59:59.000Z

    The Daya Bay reactor neutrino experiment has observed the disappearance of electron antineutrinos from nuclear reactors at $\\sim$kilometer baselines. The relative measurement of the $\\bar\

  12. Recent Results From The Daya Bay Experiment

    E-Print Network [OSTI]

    Zhang, Chao

    2015-01-01T23:59:59.000Z

    The Daya Bay reactor neutrino experiment has observed the disappearance of electron antineutrinos from nuclear reactors at $\\sim$kilometer baselines. The relative measurement of the $\\bar\

  13. Recent Sediments of Monterey Bay, California

    E-Print Network [OSTI]

    Yancey, T. E.

    1968-01-01T23:59:59.000Z

    metamorphic ciscan in the Salinas basin. The Salinian whichstations, The Salinas Salinas Basin all water basin canof the Salinas Valley Range, drainage and basin. N BAY SCALE

  14. 11,23,1,1,,19,10,"BANGOR HYDRO ELECTRIC CO","ELLSWORTH",0,,50159,0,"A",98,,,1999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,1469,6,01179,"WAT","HY"

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National and Regional Data; Row: NAICS Codes;98,,,1999,0,0,1e+15,1469,6,01179,"WAT","HY" 11,23,1,1,,19,15,"BANGOR

  15. altona bay st: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    stochastic planning. 1 Introduction Dekhtyar, Alexander 83 BAY AREA PARK RELATIONAL CREEK Computer Technologies and Information Sciences Websites Summary: BAY AREA PARK CODD...

  16. admiralty bay antarctica: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    E. Distefano; S. Messina; G. Cutispoto 2008-07-18 103 BAY AREA PARK RELATIONAL CREEK Computer Technologies and Information Sciences Websites Summary: BAY AREA PARK CODD...

  17. apalachicola bay usa: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of 192 NAME: Habitat Restoration in Kaneohe Bay, Hawaii LOCATION: Kaneohe Bay, County of Honolulu, Hawaii Engineering Websites Summary: ACRES: 13 acres coral reef...

  18. ariake bay japan: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bay: Episodic growth of the Laurentian mantle keel Geosciences Websites Summary: Seismic imaging of the lithosphere beneath Hudson Bay: Episodic growth of the Laurentian...

  19. Bay Bridge Lights Presentation prepared by Zoon Engineering

    Energy Savers [EERE]

    2015 BAY BRIDGE LIGHTS Presentation prepared by Zoon Engineering Presentation Outline Lighting of the New East Span of the Bay Bridge Brief Over view Lighting Facts ...

  20. ARRA Proposed Award: Retrofit Bay Area

    E-Print Network [OSTI]

    ARRA Proposed Award: Retrofit Bay Area Counties of Alameda, Contra Costa, Marin, San Francisco per year Prime contractor: Association of Bay Area Governments (ABAG) Sub contractors: Alameda County Waste Management Authority (StopWaste.org) County of Contra Costa County of Marin City

  1. Low Oxygen Environments in Chesapeake Bay

    E-Print Network [OSTI]

    Boynton, Walter R.

    Low Oxygen Environments in Chesapeake Bay Jeremy Testa Chesapeake Biological Laboratory University of Maryland Center for Environmental Science Why we care about low oxygen? What causes low oxygen? Where and When does Chesapeake Bay lose oxygen? #12;#12;Hypoxia and Chesapeake Animals Low dissolved oxygen

  2. New and Underutilized Technology: High Bay LED Lighting

    Broader source: Energy.gov [DOE]

    The following information outlines key deployment considerations for high bay LED lighting within the Federal sector.

  3. A study of the Galveston Bay bait-shrimp fishery

    E-Print Network [OSTI]

    Lamkin, John Tillman

    1984-01-01T23:59:59.000Z

    :1 with a yearly average of 4:1. Watts and pellegrin (1982) working off Texas and Louisiana reported ratios ranging from 3. 8:1 (& 10 fm) and 13. 9:1 (0-10 fm) in 1981 to 1. 7:1 and 4. 6:1, respectively, in 1982. Composition of the incidental catch... AREA Offatts Bayou West Bay Offatts Bayou West Bay Offatts Bayou West Bay Offatts Bayou West Bay % OF TOWS 26 74 50 50 7 93 6 94 November 1981 Lower Galveston Bay 28 West Bay 72 December 1981 Lower Galveston Bay 100 May 1982 June...

  4. Bayes, Asymptotics, Simulation and the Bootstrap

    E-Print Network [OSTI]

    Fletcher, David

    Bayes, Asymptotics, Simulation and the Bootstrap David Fletcher Department of Mathematics Bootstrapping and Bayesian Methods #12;Bayesian Methods and Asymptotics Bayesian methods Conceptually simple for lognormal cases Insight: studentized bootstrap better than percentile Simulations useful for checking actual

  5. Introduction The bay scallop, Argopecten irradi-

    E-Print Network [OSTI]

    71(3) 17 Introduction The bay scallop, Argopecten irradi- ans amplicostatus, has been present (Garcia-Cubas, 1968). Historical Uses Mollusks were used by the pre-Co- lumbian cultures in Mexico as food

  6. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer

  7. Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP/GaAs heterostructures

    E-Print Network [OSTI]

    Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP September 2007 Utilizing lattice-matched GaAs/InGaP/GaAs heterostructures, clean micromechanical resonators are fabricated and characterized. The nearly perfect selectivity of GaAs/InGaP is demonstrated by realizing

  8. Ga nanoparticle-enhanced photoluminescence of GaAs

    SciTech Connect (OSTI)

    Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-09-02T23:59:59.000Z

    We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

  9. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01T23:59:59.000Z

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  10. GaAs/InGaP/AlGaAs quantum-well infrared photodetectors

    SciTech Connect (OSTI)

    Keshagupta, P.; Radpour, F. [Univ. of Cincinnati, OH (United States)

    1994-12-31T23:59:59.000Z

    In this paper, a new quantum-well infrared photodetector (QWIP) based on bound-to-miniband transitions in a GaAs/InGaP quantum well with GaAs/AlGaAs short superlattice barriers is presented and compared with the conventional GaAs/InGaP QWIPs. Results of the theoretical calculations of the detector parameters and the preliminary fabrication results of an embedded-well to miniband (EWTMB) GaAs/InGaP/AlGaAs quantum well/superlattice detector are presented. The advantages of the proposed design include improvement of the material quality, ability to adjust the peak wavelength in 8--12 {micro}m range, and in the lower dark current.

  11. IMPACTS OF CLIMATE CHANGE ON SAN FRANCISCO BAY AREA

    E-Print Network [OSTI]

    IMPACTS OF CLIMATE CHANGE ON SAN FRANCISCO BAY AREA RESIDENTIAL ELECTRICITY CONSUMPTION anthropogenic climate change on residential electricity consumption for the nine San Francisco Bay Area counties with different meant temperatures on households' electricity consumption. The estimation uses a comprehensive

  12. Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well

    SciTech Connect (OSTI)

    Asami, T.; Nosho, H.; Tackeuchi, A. [Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555 (Japan); Li, L. H.; Harmand, J. C. [Laboratory for Photonics and Nanostructures-CNRS, Site Alcatel de Marcoussis, Route de Nozay, 91460 Marcoussis (France); Lu, S. L. [Suzhou Institute of Nano-tech and Nano-bionics, CAS, Dushu, Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou 215125 (China)

    2011-12-23T23:59:59.000Z

    We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn{sub 0.36}N{sub 0.006}AsSb{sub 0.015} well, 5-nm-thick GaN{sub 0.01}AsSb{sub 0.11} intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.

  13. Development of Parameterized Surge Response Functions for Coastal Bays

    E-Print Network [OSTI]

    Katyal, Rajat

    2011-02-22T23:59:59.000Z

    ). The surge inside bays tends to be different from that at the open coast due to local geometric factors like shape, center of gravity, and characteristic size of the bay. To predict accurately the surge levels inside the bay, scaling laws are developed based...

  14. Sedimentary parameters of upper Barataria Bay, Louisiana

    E-Print Network [OSTI]

    Siegert, Rudolf B

    1961-01-01T23:59:59.000Z

    SEDIMENTARY PARAMETERS OF UPPER BARATARIA BAY, LOUISIANA A Thesis Rudolf Bernhardt Siegert Submitted to the Graduate School of the Agricultural snd Mechanical College of Texas in partial fulfillment of the reGulremente for the d. agree... of MASTER OF SCIENCE August 1961 Ma)or Sub)ect GeologP SEDYIKNTARY PARAI'ZTEHS OF DT'PBR BARATARIA BAY, LOUISIANA A Thesis By Rudolf Bernhardt Siegert Approved as to style and content by: Chairman of C 'tice Bea of Department or Student Advisor...

  15. A geologic study of Matagorda Bay, Texas

    E-Print Network [OSTI]

    Fagg, David Bruce

    1957-01-01T23:59:59.000Z

    3ecent-I'leistoccnc contact $9 33 Piston Core 33 snoN. inI. - iiecent-Pleistocene contact-- 91 34 I'iston Core 3r3 s&ro&r &ng Hecerrt-Pleistocene contaci. -- 92 35 "Sand Silt Clay 3(atro 1'rian3. "les"- ? -107 Plate 1 Matai, "o& da Hay... 5 The Eunice formation alon the west shore of Matagorda Bay north of LaSalle Bayou----------- 29 6 Eunice sands overlying Eunice clayey silts on the west shore of hiatagorda Bay north of LaSalle Bayou 29 7 Eunice sand overlying Eunice clayey...

  16. Chesapeake Bay anoxia: origin, development, and significance

    SciTech Connect (OSTI)

    Officer, C.B.; Biggs, R.B.; Taft, J.L.; Cronin, L.E.; Tyler, M.A.; Boynton, W.R.

    1984-01-06T23:59:59.000Z

    Anoxia occurs annually in deeper waters of the central portion of the Chesapeake Bay and presently extends from Baltimore to the mouth of the Potomac estuary. This condition, which encompasses some 5 billion cubic meters of water and lasts from May to September, is the result of increased stratification of the water column in early spring, with consequent curtailment of reoxygenation of the bottom waters across the halocline, and benthic decay of organic detritus accumulated from plankton blooms of the previous summer and fall. The Chesapeake Bay anoxia appears to have had significant ecological effects on many marine species, including several of economic importance. 43 references, 7 figures, 1 table.

  17. BayWa Group | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:EzfeedflagBiomass Conversions IncBay County, Florida: Energy ResourcesBayWa Group Jump to:

  18. Compositionally-graded InGaAsInGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

    E-Print Network [OSTI]

    Compositionally-graded InGaAsInGaP alloys and GaAsSb alloys for metamorphic InP on GaAs Li Yang a of tandem graded layers of InGaAs and InGaP with compositional grading of the In concentration. This tandem

  19. 11,23,1,3,2,19,30,"BANGOR HYDRO ELECTRIC CO","MEDWAY",0,"LIGHT OIL",50159,0,"A",1299,,,2000,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,1474,6,01179,"FO2","IC"

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National and Regional Data; Row: NAICS Codes;98,,,1999,0,0,1e+15,1469,6,01179,"WAT","HY"3,2,19,30,"BANGOR HYDRO

  20. Sonar imaging of bay bottom sediments and anthropogenic impacts in Galveston Bay, Texas

    E-Print Network [OSTI]

    Maddox, Donald Shea

    2007-04-25T23:59:59.000Z

    based on changes in amplitude and stratigraphy. Parallel, layered sediments are seen filling the bay valley and resting atop a sharp contact at which the acoustic signal fades out. Along the flanks of the valley fill the acoustic response revealed...

  1. Fuzzy decision and control, the Bayes context

    E-Print Network [OSTI]

    Painter, John H.

    1993-12-15T23:59:59.000Z

    This paper shows how it is that fuzzy control may be viewed as a particular kind of stochastic (Bayesian) control. With the Bayes approach, fuzzy control may be viewed as an ensembled-average control, where the average is taken over a set...

  2. Carolina bays of the Savannah River Plant

    SciTech Connect (OSTI)

    Schalles, J.F. (Creighton Univ., Omaha, NE (USA)); Sharitz, R.R.; Gibbons, J.W.; Leversee, G.J.; Knox, J.N. (Savannah River Ecology Lab., Aiken, SC (USA))

    1989-01-01T23:59:59.000Z

    Much of the research to date on the Carolina bays of the Savannah River Plant and elsewhere has focused on certain species or on environmental features. Different levels of detail exist for different groups of organisms and reflect the diverse interests of previous investigators. This report summarizes aspects of research to date and presents data from numerous studies. 70 refs., 14 figs., 12 tabs.

  3. Prudhoe Bay Oil Production Optimization: Using Virtual

    E-Print Network [OSTI]

    Mohaghegh, Shahab

    1 Prudhoe Bay Oil Production Optimization: Using Virtual Intelligence Techniques, Stage One: Neural total field oil production by optimizing the gas discharge rates and pressures at the separation handling capacity and subsequent oil production. 10 YEAR AVERAGE AMBIENT 1990-2000 & 2001, 2002 Averages

  4. Bayes Nets Representation: joint distribution and conditional

    E-Print Network [OSTI]

    Mitchell, Tom

    Bayes Nets Representation: joint distribution and conditional independence Yi Zhang 10-701, Machine joint distribution of BNs Infer C. I. from factored joint distributions D-separation (motivation) 2 structure All about the joint distribution of variables ! Conditional independence assumptions are useful

  5. Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors

    E-Print Network [OSTI]

    Pala, Nezih

    Torr and consisted of a 1.4 lm undoped GaN buffer layer on i-SiC substrate, * Corresponding authorLow frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors N. Pala a November 2002 Abstract Low-frequency noise in AlGaN/InGaN/GaN double heterostructure field effect

  6. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    E-Print Network [OSTI]

    Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

    2010-08-24T23:59:59.000Z

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  7. Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption In this paper, we present four GaN based polar quantum structures grown on c-plane embedded in p-i-n diode GaN/AlGaN quantum structures for operation in the deep-UV spectral region and the other three

  8. Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1

    E-Print Network [OSTI]

    Nabben, Reinhard

    Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1 , T. Stempel1/37, 01-142 Warsaw, Poland ABSTRACT Time-integrated and time-resolved photoluminescence measurements on InGaN quantum wells grown by MOCVD on two different substrates (sapphire and GaN) show that the lumines- cence

  9. Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers

    SciTech Connect (OSTI)

    Yang, Yujue; Wang, Junxi; Li, Jinmin; Zeng, Yiping, E-mail: ypzeng@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-06-21T23:59:59.000Z

    The effects of InGaN-based light-emitting diodes (LEDs) with Al composition increasing and decreasing GaN-AlGaN barriers along the growth direction are studied numerically. Simulation results suggest that the LEDs with GaN-AlGaN composition-decreased barriers show more significant enhancement of light-output power and internal quantum efficiency than LEDs with composition-increasing GaN-AlGaN barriers when compared with the conventional LED with GaN barriers, due to the improvement in hole injection efficiency and electron blocking capability. Moreover, the optical performance is further improved by replacing GaN-AlGaN barriers with AlGaN-GaN barriers of the same Al composition-decreasing range, which are mainly attributed to the modified band diagrams. In addition, the major causes of the different efficiency droop behaviors for all the designed structures are explained by the electron leakage current and the different increase rates of hole concentration with injection current.

  10. Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers

    E-Print Network [OSTI]

    Keogh, David Martin

    2006-01-01T23:59:59.000Z

    T. Henderson, High- Speed InGaP/GaAs HBTs Using a SimpleA typical AlGaAs/GaAs HBT or InGaP/GaAs HBT has the opposite

  11. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Mreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-07-07T23:59:59.000Z

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  12. Mercury bioaccumulation in Lavaca Bay, Texas

    E-Print Network [OSTI]

    Palmer, Sally Jo

    1992-01-01T23:59:59.000Z

    (waves), and human activities (dredging and shrimping) can potentially release mercury to the overlying water (LINDBERG and HARRISS, 1977; CRANSTON, 1976). The solubility, reactivity, and toxicity of mercury is dependent on its form. Divalent mercury... MERCURY BIOACCUMULATION IN LAVACA BAY, TEXAS A Thesis by SALLY JO PALMER Submitted to the Office of Graduate Studies of Texas ABM University in partial fulfillment of the requirements for the degree of MASTER OF SCIENCE August 1992 Major...

  13. Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta

    E-Print Network [OSTI]

    Svane, Axel Torstein

    69,71 Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta Department of Physics properties of wurtzite GaN are studied by Ga nuclear magnetic resonance NMR in a GaN bulk crystal containing GaN is a wide band-gap semiconductor which crystallizes in the hexagonal wurtzite structure

  14. Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions Y Abstract Compositionally abrupt InGaP/GaAs heterojunctions grown by gas-source molecular beam epitaxy have the InGaP layer show non-uniform In and Ga distribution. About 1.5 nm of transition region

  15. Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    del Alamo, Jess A.

    Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs Feng Gao1, USA tpalacios@mit.edu; (617) 324-2395 Keywords: AlGaN/GaN HEMTs, reliability, moisture, electro-chemical reactions Abstract The nature of structural degradation in AlGaN/GaN high electron mobility transistors

  16. Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High

    E-Print Network [OSTI]

    Li, Yat

    Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors, 2006 ABSTRACT We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire-organic chemical vapor deposition (MOCVD). Transmission electron microscopy (TEM) studies reveal that the GaN/ AlN/AlGaN

  17. Petroleum hydrocarbon-degrading bacteria in the Galveston Bay system

    E-Print Network [OSTI]

    Schropp, Steven James

    1979-01-01T23:59:59.000Z

    of Department) (Membge' ) I, (Member) December, 1979 ABSTRACT Petroleum Hydrocarbon-Degrading Bacteria in the Galveston Bay System {December 1979) Steven James Schropp: B. S. , Texas A&M University Co-Chairmen of Advisory Committee: Dr. John R. Schwarz... about the distribution and abundance of petroleum hydrocarbon-degrad- ing bacteria in the Galveston Bay system. Several parts of the Galveston Bay system were sampled during this study. Petroleum input to the study area ranged from relatively small...

  18. Wind-wave measurements in a shallow estuary: Trinity Bay, Texas

    E-Print Network [OSTI]

    Dupuis, Keith Wade

    2009-05-15T23:59:59.000Z

    Acoustic current meter data collected in the shallow ( 3m depth) Trinity Bay, (TB a sub-bay in Galveston Bay), TX, estuary were used to characterize locally generated windwaves. Significant wave heights, periods, and directions were estimated from...

  19. Appendix B. Selected Web Pages Related to MHB 1. NARRAGANSETT BAY PORTS DATA: (CONDUCTIVITY, SALINITY,

    E-Print Network [OSTI]

    Chen, Changsheng

    Power Plant Canal Station Power Plant Mystic Power Plant http://www.pirg.org/masspirg/enviro of Narragansett Bay fish and fisheries, a survey of sediment pollution in Narragansett Bay, a study of Bay

  20. Beta decay of Ga-62

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

  1. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

    SciTech Connect (OSTI)

    Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

    2013-08-19T23:59:59.000Z

    We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

  2. arcachon bay france: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bay Area Environmental Sciences and Ecology Websites Summary: Soulejule Stevens Creek TotalMercury(ppmwetweight) Mercury Concentrations in Channel Catfish 12;0.00 0.50...

  3. Chesapeake Bay, Drilling for Oil or Gas Prohibited (Virginia)

    Broader source: Energy.gov [DOE]

    Drilling for oil or gas in the waters or within 500 hundred feet from the shoreline of the Chesapeake Bay or any of its tributaries is prohibited.

  4. Humboldt Bay Initiative: Adaptive Management in a Changing World

    E-Print Network [OSTI]

    Schlosser, Susan

    2009-01-01T23:59:59.000Z

    annual maintenance dredging (2007-2011). NMFS, Southwestdevelopment, diking, and dredging. The Bay and itsor is directly removed by dredging. Watersheds adjacent to

  5. Control of hardwood regeneration in restored carolina bay depression wetlands.

    SciTech Connect (OSTI)

    Moser, Lee, J.; Barton, Christopher, D.; Blake, John, I.

    2012-06-01T23:59:59.000Z

    Carolina bays are depression wetlands located in the coastal plain region of the eastern United States. Disturbance of this wetland type has been widespread, and many sites contain one or more drainage ditches. Restoration of bays is of interest because they are important habitats for rare flora and fauna. Previous bay restoration projects have identified flood-tolerant woody competitors in the seedbank and re-sprouting as impediments to the establishment of desired herbaceous wetland vegetation communities. We restored 3 bays on the Savannah River Site, South Carolina, by plugging drainage ditches, harvesting residual pine/hardwood stands within the bays, and monitoring the vegetative response of the seedbank to the hydrologic change. We applied a foliar herbicide on one-half of each bay to control red maple (Acerrubrum), sweetgum (Liquidambar styraciflua), and water oak (Quercus nigra) sprouting, and we tested its effectiveness across a hydrologic gradient in each bay. Hardwood regeneration was partially controlled by flooding in bays that exhibited long growing season hydroperiods. The findings also indicated that herbicide application was an effective means for managing hardwood regeneration and re-sprouting in areas where hydrologic control was ineffective. Herbicide use had no effect on species richness in the emerging vegetation community. In late-season drawdown periods, or in bays where hydroperiods are short, more than one herbicide application may be necessary.

  6. Modeling nitrogen cycling in forested watersheds of Chesapeake Bay

    SciTech Connect (OSTI)

    Hunsaker, C.T.; Garten, C.T.; Mulholland, P.J.

    1995-03-01T23:59:59.000Z

    The Chesapeake Bay Agreement calls for a 40% reduction of controllable phosphorus and nitrogen to the tidal Bay by the year 2000. To accomplish this goal the Chesapeake Bay Program needs accurate estimates of nutrient loadings, including atmospheric deposition, from various land uses. The literature was reviewed on forest nitrogen pools and fluxes, and nitrogen data from research catchments in the Chesapeake Basin were identified. The structure of a nitrogen module for forests is recommended for the Chesapeake Bay Watershed Model along with the possible functional forms for fluxes.

  7. Mercury-Contaminated Hydraulic Mining Debris in San Francisco Bay

    E-Print Network [OSTI]

    Bouse, Robin M; Fuller, Christopher C; Luoma, Sam; Hornberger, Michelle I; Jaffe, Bruce E; Smith, Richard E

    2010-01-01T23:59:59.000Z

    Contaminated Hydraulic Mining Debris in San Francisco BayAbstract The hydraulic gold-mining process used during thecreated by hydraulic gold mining in the Sierra Nevada,

  8. astrophyllite bay complex: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to N qubits. Finally, we show that quantum state estimates derived via the principle of maximum entropy are fundamentally different from those obtained via the quantum Bayes...

  9. activator bay k8644: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to N qubits. Finally, we show that quantum state estimates derived via the principle of maximum entropy are fundamentally different from those obtained via the quantum Bayes...

  10. Effects and impacts of vessel activity on the Kittlitz's Murrelet (Brachyramphus brevirostris) in Glacier Bay, Alaska

    E-Print Network [OSTI]

    Washington at Seattle, University of

    ) in Glacier Bay, Alaska Alison M. Agness A thesis submitted in partial fulfillment of the requirements (Brachyramphus brevirostris) in Glacier Bay, Alaska.....35 Summary

  11. Targeting Net Zero Energy at Marine Corps Base Kaneohe Bay, Hawaii...

    Broader source: Energy.gov (indexed) [DOE]

    Targeting Net Zero Energy at Marine Corps Base Kaneohe Bay, Hawaii: Assessment and Recommendations Targeting Net Zero Energy at Marine Corps Base Kaneohe Bay, Hawaii: Assessment...

  12. Analysis of Empirical MAP and Empirical Partially Bayes: Can They be Alternatives to Variational Bayes?

    E-Print Network [OSTI]

    Sugiyama, Masashi

    Bayes? Shinichi Nakajima Masashi Sugiyama Nikon Corporation Tokyo Institute of Technology Abstract Bayesian scenario, where the hyperpa- rameters are also estimated from observation, are trivial and useless, although the global solutions of empirical PB and empirical MAP are useless, the local solutions behave

  13. San Francisco Bay Map Collection / Neal Harlow (collector)

    E-Print Network [OSTI]

    Handy, Todd C.

    San Francisco Bay Map Collection / Neal Harlow (collector) Last revised October 2011 University / Physical Description o Collector's Biographical Sketch o Scope and Content o Notes Catalogue entry (UBC Library catalogue) #12;Collection Description San Francisco Bay Map Collection / Neal Harlow (collector

  14. Observations of remote and local forcing in Galveston Bay, Texas

    E-Print Network [OSTI]

    Guannel, Gregory

    2001-01-01T23:59:59.000Z

    Lcvcl Subtidal Variability. Water Level: Contour Plots, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Water Level: E/W and N/S Wind Stress. Water Level: SP and SN Wind Stress. . . . . . . . . . . . , . . . . . . . Water Level...: Conclusions. Response of Galveston Bay to Forcing: Water Surface Setup Subtidal Variability. Water Surlace Setup: Contour Plots Water Surl ace Setup: SP and SN Wind Stress. . . . . . . . . Water Surface Setup: Conclusions Response of Galveston Bay...

  15. MFR PAPER 1074 Effects of Prudhoe Bay Crude Oil on

    E-Print Network [OSTI]

    MFR PAPER 1074 Effects of Prudhoe Bay Crude Oil on Molting Tanner Crabs, Chionoecetes bairdi JOHN F bairdi , from Alaska walers were exposed 10 Prudhoe Bay crude oil in sIalic bioassays ill Ih e laboralory. Crabs in bOlh slages were similarly susceplible 10 crude oil; Ihe eSlimaled 48-hour TLIIl (Illedian

  16. Glacier Bay Inc | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to: navigation, search OpenEI Reference LibraryAdd toWell2008) |GigaCrete Inc JumpGillardGinerBay

  17. Clean Cities: Tampa Bay Clean Cities coalition

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office511041clothAdvanced Materials Advanced. C o w l i t z CPlasma0 12DenverNorthernSouthTampa Bay Clean Cities

  18. Tuscola Bay Wind | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-fTri Global Energy LLC Place: Dallas, Texas2022Wind Farm Jump to:Tuscola Bay

  19. Massachusetts Bay Transportation Authority | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual SiteofEvaluatingGroup |JilinLu an Group JumpNewMassachusetts Bay Transportation Authority Jump

  20. Chesapeake Bay Test Site | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty EditCalifornia:PowerCER.png El CER es unaChelmsford,Volcanic NationalValleyBay Test

  1. Bay Solar Power Design | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof EnergyInnovation in Carbon CaptureAtriaPower SystemsRhode Island:BatteryBatticBay

  2. Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system

    E-Print Network [OSTI]

    Coldren, Larry A.

    Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system Erik J InGaAs/InGaAsP/InGaP material system. 2005 American Institute of Physics. DOI: 10 of achieving QWI in such active regions.3,4 However, InGaAs/InGaAsP/InGaP-based de- vices offer numerous

  3. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23T23:59:59.000Z

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  4. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01T23:59:59.000Z

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  5. AlGaAs/InGaAs/AlGaAs Double Barrier

    E-Print Network [OSTI]

    Perera, A. G. Unil

    -state Er. Tunneling Quantum Dot Sensors for Multi-band Infrared and Terahertz Radiation Detection G radiation detection are demonstrated. In T-QDIP structures, photoabsorption takes place in InGaAs QDs (due

  6. Composition and Interface Analysis of InGaN/GaN Multiquantum...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells...

  7. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

    2010-10-14T23:59:59.000Z

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  8. PRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS

    E-Print Network [OSTI]

    McCluskey, Matthew

    -m thick GaN layer deposited on a sapphire substrate, and it is capped by a 0.2-m GaN:Mg pPRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS W. Shan,* J.W. Ager pressure on optical transitions in InGaN/GaN multiple quantum wells (MQWs) has been studied

  9. Free carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1

    E-Print Network [OSTI]

    As, Donat Josef

    ) substrate,7 with GaN and AlGaN layer thickness of 600 nm and 30 nm, respectively. The layer thicknessFree carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1 T. Li,1 J. Y. Huang,1 F. A (Received 24 February 2012; accepted 19 March 2012; published online 3 April 2012) Cubic Al0.3Ga0.7N/GaN

  10. Subenvironments of deposition in San Antonio Bay, Texas

    E-Print Network [OSTI]

    Hall, Gary Lynn

    1973-01-01T23:59:59.000Z

    with the Muddy Sandstone at Bell Creek Field, Montana. CONCLUSIONS. REFERENCES CITED VITA 107 108 108 ill 117 117 121 122 123 124 124 126 128 128 128 132 135 138 142 LIST OF TABLES TABLE 1 Mineralogical Composition of Montmori lloni tie.... The usual source of high salinity water enters from the Gulf of Mexico through Pass Cavallo and mixes with Matagorda Bay waters. This water passes westward through Espiritu Santo Bay into San Antonio Bay, where it appears to turn and move northwestward...

  11. InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker

    E-Print Network [OSTI]

    Woodall, Jerry M.

    InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular; accepted 17 November 1995 The growth and device characterization of an InGaP/GaAs double-quality phosphorus-containing compounds.14 The growth of high-performance InGaP/ GaAs and InGaAs/InP single

  12. InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P. C. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Baca, A. G. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Li, N. Y. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Xie, X. M. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Hou, H. Q. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Armour, E. [Emcore Corporation, Somerset, New Jersey 08873 (United States)] [Emcore Corporation, Somerset, New Jersey 08873 (United States)

    2000-04-17T23:59:59.000Z

    We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the breakdown voltage (BV{sub CEO}) is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with {delta} doping is inserted at the base-collector junction. The improved device has a peak current gain of seven with ideal current-voltage characteristics. (c) 2000 American Institute of Physics.

  13. InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-10T23:59:59.000Z

    The authors have demonstrated a functional NpN double heterojunction bipolar transistor (DHBT) using InGaAsN for base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs HBT. The lower V{sub ON} is attributed to the smaller bandgap (E{sub g}=1.20eV) of MOCVD grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the BV{sub CEO} is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs Hbts of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger {triangle}E{sub C} between InGaAsN and GaAs, a graded InGaAs layer with {delta}-doping is inserted at the base-collector junction. The improved device has a peak current gain of 7 with ideal IV characteristics.

  14. Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction

    E-Print Network [OSTI]

    Sirenko, Andrei

    Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied for x-ray diffraction and reciprocal space mapping of InGaN/GaN multiple-quantum-well MQW structures grown on the sidewalls of 10- m-wide triangular GaN ridges with 1-1.1 facets. Samples were produced

  15. GaN0.011P0.989GaP Double-Heterostructure Red Light-Emitting Diodes Directly Grown on GaP Substrates

    E-Print Network [OSTI]

    Tu, Charles W

    2000-01-01T23:59:59.000Z

    and C. W. Tu, GaN diodes on GaP substrates, 2000. [7] J. W.on a GaN directly grown on a GaP substrate was successfullyDH) directly a GaN grown on a (100) GaP substrate. Fig. 1(a)

  16. PP-89 Bangor-Electric Company | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the.pdfBreaking ofOilNEWResponse(Expired) | Department ofINCREASES1 Citizens0 The13 BolidenA

  17. PP-89 Bangor-Electric Company | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn'tOrigin of Contamination in235-1 Termoelectrica U.S LLCPP-63-1 Northern75 The8285-2PP-89

  18. City of Bangor, Wisconsin (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof EnergyInnovationin Urban Transport |City of Ames, IowaAshland,Ava,

  19. Bangor Hydro-Electric Co | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty EditCalifornia: EnergyAvignon, France: EnergyBagleyBangladesh: Energy Resources

  20. AlGaAs/InGaAsN/GaAs PnP double heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Sharps, P.R.; Hou, H.Q.; Laroche, J.R.; Ren, F.

    2000-01-11T23:59:59.000Z

    The authors have demonstrated a functional MOCVD-grown AlGaAs/InGaAsN/GaAsPnP DHBT that is lattice matched to GaAs and has a peak current gain ({beta}) of 25. Because of the smaller bandgap (E{sub g}=1.20eV)of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. The BV{sub CEO} is 12 V, consistent with its GaAs collector thickness and doping level.

  1. Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Mazumder, B.; Hurni, C. A.; Zhang, J. Y.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, M. H.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2012-08-27T23:59:59.000Z

    In this letter, we report on the interfacial abruptness of GaN/AlN/GaN heterostructures with pulsed laser atom probe tomography (APT). The samples were grown by plasma-assisted molecular beam epitaxy (MBE) under both metal-rich and N-rich conditions on both Ga-polar (0001) GaN templates and N-polar (0001) GaN substrates. An NH{sub 3} assisted MBE technique was involved to grow similar Ga-polar and N-polar structures on GaN:Fe substrates and GaN/Al{sub 2}O{sub 3} templates, respectively, for a comparison study. We find in all cases the interface with net positive polarization charge was chemically abrupt, whereas the interface with net negative polarization charge was diffuse. We discuss the implications on device design and performance. These data validate the efficiency of APT in studying interfaces for better performance in devices.

  2. Superior radiation-resistant properties of InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Yamaguchi, M.; Okuda, T.; Taylor, S.J.; Takamoto, T. [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan)] [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan); Ikeda, E.; Kurita, H. [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)

    1997-03-01T23:59:59.000Z

    The observation of minority-carrier injection-enhanced annealing of radiation damage to InGa{sub 0.5}P{sub 0.5}/GaAs tandem solar cells is reported. Radiation resistance of InGaP/GaAs tandem solar cells as is similar with GaAs-on-Ge cells have been confirmed with 1 MeV electron irradiations. Moreover, minority-carrier injection under light illumination and forward bias conditions is shown to enhance defect annealing in InGaP and to result in the recovery of InGaP/GaAs tandem solar cell properties. These results suggest that the InGaP/GaAs(/Ge) multijunction solar cells and InGaP-based devices have great potential for space applications. {copyright} {ital 1997 American Institute of Physics.}

  3. admiralty bay king: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    influence May Point, a distance of 2O,miles, the crabs are sought at Ewing Neck, West Creek, East Creek 123 Nonparametric Bayes Applications to Biostatistics David B. Dunson...

  4. BayesDB : querying the probable implications of tabular data

    E-Print Network [OSTI]

    Baxter, Jay

    2014-01-01T23:59:59.000Z

    BayesDB, a Bayesian database table, lets users query the probable implications of their tabular data as easily as an SQL database lets them query the data itself. Using the built-in Bayesian Query Language (BQL), users ...

  5. atlantic lisbon bay: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    guests of the Hudsons Bay Company, and on the second of the Royal Canadian Mounted Police. In addition the Royal Canadian Air Force kindly flew us to several areas well away...

  6. WIND EFFECTS ON CHEMICAL SPILL IN ST ANDREW BAY SYSTEM

    E-Print Network [OSTI]

    Chu, Peter C.

    WIND EFFECTS ON CHEMICAL SPILL IN ST ANDREW BAY SYSTEM PETER C. CHU, PATRICE PAULY Naval Can easily reach 20 m/s and more during hurricane events #12;Water Quality Management and Analysis

  7. Seagrass habitat utilization by fishes in Christmas Bay, Texas

    E-Print Network [OSTI]

    Crotwell, Patricia Lynn

    1997-01-01T23:59:59.000Z

    Fishes in Christmas Bay, TX were collected during April 1994 through March 1995 to: 1) assess temporal variability in their density, biomass, and diversity; 2) define the relationship between variability in fish population parameters...

  8. Seagrass habitat utilization by fishes in Christmas Bay, Texas

    E-Print Network [OSTI]

    Crotwell, Patricia Lynn

    1997-01-01T23:59:59.000Z

    Fishes in Christmas Bay, TX were collected during April 1994 through March 1995 to: 1) assess temporal variability in their density, biomass, and diversity; 2) define the relationship between variability in fish population parameters...

  9. Investigation of tidal power, cobscook bay, maine. Reconnaissance report

    SciTech Connect (OSTI)

    Not Available

    1980-08-01T23:59:59.000Z

    Cobscook Bay is located in Eastern, Maine, near Eastport. The bay experiences an average tide range of 18 feet and has a surface area of about 40 square miles at high tide. Single pool, single effect projects have been analyzed. Two projects, one having an installed capacity of 165 Mw and the other, 195 Mw were found to be economically feasible when forecasted, fuel escalation costs were considered.

  10. Fish assemblages on coral reefs in Guanaja, Bay Islands, Honduras

    E-Print Network [OSTI]

    Mahendran, Christopher Kandiah

    1999-01-01T23:59:59.000Z

    FISH ASSEMBLAGES ON CORAL REEFS IN GUANAJA, BAY ISLANDS, HONDURAS A Thesis by CHRISTOPHER KANDIAH MAHENDRAN Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment of the requirements for the degree... of MASTER OF SCIENCE August 1999 Major Subject: Wildlife and Fisheries Sciences FISH ASSEMBLAGES ON CORAL REEFS IN GUANAJA, BAY ISLANDS, HONDURAS A Thesis by CHRISTOPHER KANDIAH MAHENDRAN Submitted to Texas A&M University in partial fulfillment...

  11. Petroleum hydrocarbon-degrading bacteria in the Galveston Bay system

    E-Print Network [OSTI]

    Schropp, Steven James

    1979-01-01T23:59:59.000Z

    PETROLEUM HYDRQCARBOiV-DEGRADING BACTERIA IN THE GALVESTON BAY SYSTEM A Thesis by STEVEN JAMES SCHROPP Submitted to the Graduate College of Texas ASM University in partial fulfillment of the requirement for the degree of MASTER OF SCIFNCE... December 1979 Major Subject: Biology PETROLEUM HYDROCARBON-DEGRADING BACTERIA IN THE GALVESTON BAY SYSTEM A Thesis by STEVEN JAMES SCHROPP Approved as to style and content by: (Co-Chairman of Committee) '( ~CA. ( -Chairman of Committee) (Head...

  12. Beta decay of Ga-62

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...

  13. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    Logo GaN nanowires show more 3D piezoelectricity than bulk GaN admin / January 11, 2012 individual gallium nitride (GaN) nanowires showing strong piezoelectric effect in 3D. This is in spite of the fact that each nanowire only measures 100nm in diameter. While GaN is ubiquitous in optoelectronic

  14. Self-aligned AlGaN/GaN transistors for sub-mm wave applications

    E-Print Network [OSTI]

    Saadat, Omair I

    2010-01-01T23:59:59.000Z

    This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

  15. Invited Paper GaN HEMT reliability

    E-Print Network [OSTI]

    del Alamo, Jess A.

    Invited Paper GaN HEMT reliability J.A. del Alamo *, J. Joh Microsystems Technology Laboratories mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier

  16. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01T23:59:59.000Z

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  17. InAs=InGaP=GaAs heterojunction power Schottky rectifiers

    E-Print Network [OSTI]

    Woodall, Jerry M.

    InAs=InGaP=GaAs heterojunction power Schottky rectifiers A. Chen, M. Young and J.M. Woodall A low-matched InGaP on GaAs, to make a high-temperature power rectifier. The LT molecular beam epitaxy technique enables the formation of an abrupt interface between InAs and InGaP. This heterojunction rectifier

  18. Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs Rajkumar Santhakumar, Yi have been designed and fabricated using AlGaN/GaN HEMTs. One of them uses a standard HEMT for the unit-gate distributed amplifier achieves a CW peak output power of 1W and a PAE of about 16% at 4GHz. Index Terms -- GaN

  19. Role of strain in polarization switching in semipolar InGaN/GaN quantum wells

    E-Print Network [OSTI]

    Role of strain in polarization switching in semipolar InGaN/GaN quantum wells Qimin Yan,1,a Patrick November 2010 The effect of strain on the valence-band structure of 112¯2 semipolar InGaN grown on GaN D6 is calculated for GaN and InN using density functional theory with the Heyd­Scuseria­ Ernzerhof

  20. GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges

    E-Print Network [OSTI]

    Perera, A. G. Unil

    GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges G. Ariyawansa, M October 2006 A GaN/AlGaN heterojunction interfacial work function internal photoemission infrared detector, the work demonstrates 54 m 5.5 THz operation of the detector based on 1s2p transition of Si donors in GaN

  1. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

    SciTech Connect (OSTI)

    Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

    2012-01-01T23:59:59.000Z

    AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

  2. Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer

    SciTech Connect (OSTI)

    Chen, Z.; Denbaars, S. P. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106 (United States); Pei, Y.; Newman, S.; Chu, R.; Brown, D.; Keller, S.; Mishra, U. K. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Chung, R.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2009-03-16T23:59:59.000Z

    Semi-insulating (SI) GaN layers were grown on 4H-SiC substrates by inserting an AlGaN layer between the AlN buffer and the GaN layer. Secondary ion mass spectroscopy measurements showed that the AlGaN layer prevented Si from diffusing from the substrate into the GaN layer. X-ray diffraction and atomic force microscopy analyses showed that an optimized AlGaN interlayer does not degrade the crystal quality or surface morphology of the SI GaN. The room temperature mobility of an AlGaN/GaN heterostructure using this SI GaN was 2200 cm{sup 2}/V s. High electron mobility transistors (HEMTs) with 0.65 {mu}m long gates were also fabricated on these SI GaN buffers. A power density of 19.0 W/mm with a power added efficiency of 48% was demonstrated at 10 GHz at a drain bias of 78 V. These HEMTs also exhibited sharp pinch off, low leakage, and negligible dispersion.

  3. Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy Huajie Chen, Kista, Sweden Abstract Strain-compensated InGaAsP/InGaP superlattices are studied in cross- section. The strain compensated InGaAsP/InGaP/InP superlattices studied here have application for light sources

  4. AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN 1 epitaxially on AlGaN/GaN HFET structures by molecular beam epitaxy (MBE). Growth was first performed on GaN templates to establish epitaxial growth conditions. X-ray diffraction showed [001] TiO2 || [1010]GaN

  5. AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium; published 13 October 2004) Use of high-k gate dielectrics in AlGaN/GaN heterostructure field transconductance and pinchoff voltage. To achieve this, AlGaN/GaN metal-oxide-semiconductor heterostructure field

  6. In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device based on a

    E-Print Network [OSTI]

    Yang, Kyounghoon

    205 Abstract In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device basedBm at 2 GHz have been demonstrated from the fabricated device. 1. Introduction In recent years, AlGaN/GaN noise amplifier and switch. Superior results have been reported in microwave power performance of AlGaN/GaN

  7. A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design presents a new architecture for an AlGaN/GaN HEMT frequency doubler using the active integrated antenna. The antenna operates as a fundamental frequency reflector in this circuit. Using AlGaN/GaN with 1mm gate

  8. Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate,

    E-Print Network [OSTI]

    Boyer, Edmond

    Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Aristide Briand, 92.195 Meudon, France Abstract. Wide bandgap devices such as AlGaN/GaN High Electron of GR- bulges related respectively to AlGaN/GaN interface and quantum well are identified. Each GR

  9. Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2012-12-24T23:59:59.000Z

    Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

  10. High efficiency InGaP solar cells for InGaP/GaAs tandem cell application

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Kurita, H.; Ohmori, M. [Japan Energy Corp., Toda, Saitama (Japan). Central Research Lab.

    1994-12-31T23:59:59.000Z

    In this paper, high conversion efficiency single junction InGaP solar cells with n-p-p{sup +} structure are presented and their application to InGaP/GaAs monolithic tandem cells is discussed. In the InGaP cells, a best conversion efficiency of 18.48% was achieved by introducing the p{sup +} peak back surface field (BSF) layer with a high carrier concentration of 2 {times} 10{sup 18} cm{sup {minus}3}, which improved both short circuit current (Isc) and open circuit voltage (Voc). However, in the case of InGaP/GaAs tandem cells, a decrease in carrier concentration of the InGaP BSF layer, which was caused by the diffusion of Zn, was found to reduce the Isc and Voc of the tandem cell. The reduction in the carrier concentration was suppressed by using a thicker BSF layer of 0.5 {micro}m, which reduced the current density in the GaAs bottom cell. An InGaP/GaAs tandem cell with 27.3% efficiency and a high Voc of 2.418 V was obtained.

  11. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation

    E-Print Network [OSTI]

    Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phaseAs was 70% of that on bulk InP at both temperatures. To achieve this, graded buffers in the InGaAs, InGaP

  12. AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates

    E-Print Network [OSTI]

    Manfra, Michael J.

    PS-4 AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates Nils ABSTRACT Molecular Beam Epitaxy of GaN and related alloys is becoming a rival to the more established, and HVPE SI-GaN templates on sapphire. While sapphire and SI-Sic are established substrates for the growth

  13. ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    MOSCAP process ?ow: n-GaN substrate; Ohmic metallization andtion for a AlGaN/ GaN HEMT on a substrate which has a poorsapphire substrate, a well-passivated AlGaN/ GaN HEMT grown

  14. Quantification of sediment bed - water column exchange processes in the South San Francisco Bay estuary

    E-Print Network [OSTI]

    Gladding, Steven Michael

    2011-01-01T23:59:59.000Z

    Hydraulic Mining 1.2.2. Dredging 1.2.3. Contaminants 1.2.4.of the sediment bed of the Bay (see Section Dredging Largescale dredging operations have occurred in the Bay for more

  15. Energy Secretary Steven Chu to Travel to Bay Area to Highlight...

    Energy Savers [EERE]

    Steven Chu to Travel to Bay Area to Highlight State of the Union Address, Commitment to Clean Energy Energy Secretary Steven Chu to Travel to Bay Area to Highlight State of the...

  16. The Daya Bay Nuclear Plant Project in the Light of International Environmental Law

    E-Print Network [OSTI]

    Mushkat, Roda

    1990-01-01T23:59:59.000Z

    result from locating a nuclear plant so close to the Hongat 1292 (1975). THE DA YA BAY NUCLEAR PLANT PROJECT national1986) (H.K. ). THE DA YA BAY NUCLEAR PLANT PROJECT IV. THE "

  17. Education Program for Improved Water Quality in Copano Bay Final Report

    E-Print Network [OSTI]

    Berthold, A.; Moench, E.; Wagner, K.; Paschal, J.

    2012-05-17T23:59:59.000Z

    The Copano Bay watershed covers approximately 1.4 million acres encompassing portions of Karnes, Bee, Goliad, Refugio, San Patricio and Aransas counties. Copano Bay and its main tributaries, the Mission and Aransas rivers, were placed on the Texas...

  18. Text classification Naive Bayes NB theory Evaluation of TC Web Search and Text Mining

    E-Print Network [OSTI]

    Gray, Alexander

    Bayes NB theory Evaluation of TC Take-away today Text classification: definition & relevance theory Evaluation of TC Take-away today Text classification: definition & relevance to information: definition & relevance to information retrieval Naive Bayes: simple baseline text classifier Theory

  19. Green light emission by InGaN/GaN multiple-quantum-well microdisks

    SciTech Connect (OSTI)

    Hsu, Yu-Chi; Lo, Ikai, E-mail: ikailo@mail.phys.nsysu.edu.tw; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Tsai, Cheng-Da; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)] [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China); Hsu, Gary Z. L. [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)] [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)

    2014-03-10T23:59:59.000Z

    The high-quality In{sub x}Ga{sub 1?x}N/GaN multiple quantum wells were grown on GaN microdisks with ?-LiAlO{sub 2} substrate by using low-temperature two-step technique of plasma-assisted molecular beam epitaxy. We demonstrated that the hexagonal GaN microdisk can be used as a strain-free substrate to grow the advanced In{sub x}Ga{sub 1?x}N/GaN quantum wells for the optoelectronic applications. We showed that the green light of 566-nm wavelength (2.192?eV) emitted from the In{sub x}Ga{sub 1?x}N/GaN quantum wells was tremendously enhanced in an order of amplitude higher than the UV light of 367-nm wavelength (3.383?eV) from GaN.

  20. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01T23:59:59.000Z

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  1. Anthropogenic Influence on Recent Bathymetric Change in West-Central San Francisco Bay

    E-Print Network [OSTI]

    Barnard, Patrick; Kvitek, Rikk

    2010-01-01T23:59:59.000Z

    Bay coastal system. Sedimentology, In: Li M, Sherwood C,Publication Book on Shelf Sedimentology. 33 p. Fregoso TA,

  2. InGaP/GaAs and InGaAs mechanically-stacked triple-junction solar cells

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Agui, T. [Japan Energy Corp., Toda, Saitama (Japan)] [and others

    1997-12-31T23:59:59.000Z

    Triple-junction cells with AM1.5 efficiencies of over 33% have been demonstrated. A planar type InGaP/GaAs monolithic dual-junction cell was fabricated on a semi-insulating FaAs substrate, which has high infra-red transparency. Then a dual-junction cell, with efficiency of 27--28%, was mechanically stacked on an InGaAs cell fabricated on an InP substrate. The bottom InGaAs cell showed an efficiency of 6.2% under the InGaP/GaAs cell, and a total efficiency of 33--34% was achieved for the four-terminal triple-junction cell.

  3. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20T23:59:59.000Z

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  4. Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

    SciTech Connect (OSTI)

    Roul, Basanta; Kumar, Mahesh [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Rajpalke, Mohana K.; Bhat, Thirumaleshwara N.; Krupanidhi, S. B. [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Kalghatgi, A. T. [Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Kumar, Nitesh; Sundaresan, A. [Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bangalore 560064 (India)

    2011-10-17T23:59:59.000Z

    We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm{sup -1} in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy.

  5. Onsite data processing and monitoring for the Daya Bay Experiment

    E-Print Network [OSTI]

    Ying-Biao Liu; Miao He; Bei-Jiang Liu; Meng Wang; Qiu-Mei Ma; Fa-Zhi Qi; Shan Zeng

    2014-06-09T23:59:59.000Z

    The Daya Bay Reactor Neutrino Experiment started running on September 23, 2011. The offline computing environment, consisting of 11 servers at Daya Bay, was built to process onsite data. With current computing ability, onsite data processing is running smoothly. The Performance Quality Monitoring system (PQM) has been developed to monitor the detector performance and data quality. Its main feature is the ability to efficiently process multi-data-stream from three experimental halls. The PQM processes raw data files from the Daya Bay data acquisition system, generates and publishes histograms via a graphical web interface by executing the user-defined algorithm modules, and saves the histograms for permanent storage. The fact that the whole process takes only around 40 minutes makes it valuable for the shift crew to monitor the running status of all the sub-detectors and the data quality.

  6. Heavy metal concentration in bay sediments of Japan

    SciTech Connect (OSTI)

    Fukue, Masaharu; Kato, Yoshihisa; Nakamura, Takaaki [Tokai Univ., Shimizu (Japan); Yamasaki, Shoichi [Aoki Marine Ltd., Fukushima, Osaka (Japan)

    1995-12-31T23:59:59.000Z

    Because industry discharge wastes into the sea, marine sediments can be contaminated with various kinds of hazardous and toxic substances. This study discusses how the degree of pollution of heavy metals affects the marine sediments from Osaka Bay and Tokyo Bay. In this study, the concentrations of various metals, such as manganese, iron, aluminum, titanium, vanadium, copper, phosphorus, etc., were measured from sediment samples obtained from different sites in the bays. However, the results had to be corrected because background concentrations for each metal differ with site location and grain size characteristics. The large difference between background and individual concentrations at various soil depths indicates that the surface layers of the seabed are significantly polluted with some species of heavy metal and other elements.

  7. Meta learning of bounds on the Bayes classifier error

    E-Print Network [OSTI]

    Moon, Kevin R; Hero, Alfred O

    2015-01-01T23:59:59.000Z

    Meta learning uses information from base learners (e.g. classifiers or estimators) as well as information about the learning problem to improve upon the performance of a single base learner. For example, the Bayes error rate of a given feature space, if known, can be used to aid in choosing a classifier, as well as in feature selection and model selection for the base classifiers and the meta classifier. Recent work in the field of f-divergence functional estimation has led to the development of simple and rapidly converging estimators that can be used to estimate various bounds on the Bayes error. We estimate multiple bounds on the Bayes error using an estimator that applies meta learning to slowly converging plug-in estimators to obtain the parametric convergence rate. We compare the estimated bounds empirically on simulated data and then estimate the tighter bounds on features extracted from an image patch analysis of sunspot continuum and magnetogram images.

  8. A Transect of Glacier Bay Ocean Currents Measured by Acoustic Doppler Current Profiler (ADCP)

    E-Print Network [OSTI]

    that the tidal flow accelerates over Glacier Bay's shallow entrance sill to speeds of 180 cm/s and then slowsA Transect of Glacier Bay Ocean Currents Measured by Acoustic Doppler Current Profiler (ADCP shipboard acoustic Doppler current profiler (ADCP) transects of ocean current in Glacier Bay and Muir Inlet

  9. REPRODUCTIVE CYCLE OF THE SOFT-SHELL CLAM, MYA ARENARIA, AT SKAGIT BAY, WASHINGTON

    E-Print Network [OSTI]

    'll Skagit Bay in northern Puget Sound. Wash. Spawning occurred from late May to early September in both 1971 the annual reproductive cycle for a soft-shell clam population from Puget Sound, Wash. Skagit Bay-shell clams in Puget Sound. DESCRIPTION OF AREA Skagit Bay, Wash., is located in northern Puget Sound 60 miles

  10. Exploring the Environmental Effects of Shale Gas Development in the Chesapeake Bay Watershed

    E-Print Network [OSTI]

    Exploring the Environmental Effects of Shale Gas Development in the Chesapeake Bay Watershed STAC Committee). 2013. Exploring the environmental effects of shale gas development in the Chesapeake Bay of shale gas development in the Chesapeake Bay Watershed. The purpose of this workshop was to engage

  11. A Baseline Assessment of the Ecological Resources of Jobos Bay, Puerto Rico

    E-Print Network [OSTI]

    A Baseline Assessment of the Ecological Resources of Jobos Bay, Puerto Rico July 2011 Editors David. A Baseline Assessment of the Ecological Resources of Jobos Bay, Puerto Rico. NOAA Technical Memorandum NOS of the Ecological Resources of Jobos Bay, Puerto Rico Prepared by the Coastal and Oceanographic Assessment, Status

  12. Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2007-02-01T23:59:59.000Z

    The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

  13. September 16-21, 2007 Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN as etch-stop layer

    E-Print Network [OSTI]

    Pala, Nezih

    0 2 V(V) C(pF) Before etching (material) After etching (device) G AlGaN substrate i-GaN DS AlN AlGaN substrate AlN i-GaN AlGaN S G DAlGaNAlGaN InGaNInGaN Standard gate recess InGaN stop layer gate recess InGaNICNS 7 September 16-21, 2007 Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN

  14. Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen

    E-Print Network [OSTI]

    York, Robert A.

    Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen Materials Department March 2005 Titanium dioxide TiO2, with the rutile structure was grown on 0001 oriented GaN and 0001 Al0.33Ga0.67N/GaN heterostructure field effect transistor HFET structures by molecular beam epitaxy. X

  15. Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells

    E-Print Network [OSTI]

    Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN based on radial pin multi quantum well (QW) junctions have been realized from GaN wires grown by catalyst- free metal organic vapor phase epitaxy. The Inx Ga1x N/GaN undoped QW system is coated over both

  16. High density plasma damage in InGaP/GaAs as AlGaAs/GaAs high electron mobility transistors

    SciTech Connect (OSTI)

    Lee, J.W.; Pearton, S.J. [Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering; Ren, F.; Kopf, R.F.; Kuo, J.M. [Bell Labs., Murray Hill, NJ (United States). Lucent Technologies; Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States); Constantine, C.; Johnson, D. [Plasma-Therm Inc., St. Petersburg, FL (United States)

    1998-11-01T23:59:59.000Z

    The introduction of plasma damage in InGaP/GaAs and AlGaAs/GaAs high electron mobility transistors (HEMTs) has been investigated using both inductively coupled plasma and electron cyclotron resonance Ar discharges. The saturated drain-source current is found to be decreased through introduction of compensating deep levels into the InGaP or AlGaAs donor layer. The degradation of device performance is a strong function of ion energy and ion flux, and an advantage of both high density plasma tools is that ion energy can be reduced by increasing the plasma density. Increasing process pressure and source power, and decreasing radio-frequency chuck power produce the lowest amounts of plasma damage in HEMTs.

  17. Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates

    E-Print Network [OSTI]

    Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates, around 104 cm-2 . The structures, grown on GaP or GaAs, consist of graded In-fraction InGaP and AlInGaP. High surface roughness and branch defects in Al InGaP lead to the lowest quality virtual substrates we

  18. Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method

    E-Print Network [OSTI]

    Okamoto, Koichi

    Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method; 78.55.Cr; 78.67.De; S7.14 Carrier dynamics in GaN and InGaN/GaN SQW structures were observed by using inhomogeneity of In composition. Recently, InGaN/GaN-based light emitting diodes (LEDs) have been commercialized

  19. N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

    E-Print Network [OSTI]

    Chung, Jinwook

    We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier ...

  20. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of InGaNGaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture Development and Industrialization of InGaNGaN LEDs on Patterned Sapphire...

  1. Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate

    E-Print Network [OSTI]

    Lu, Bin

    AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for power electronics applications. Despite the low cost of the Si substrate, the breakdown voltage (V[subscript ...

  2. Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA

    E-Print Network [OSTI]

    McGaughey, Alan

    Industrial Design ­ Shanghai, China Eaton Corporation ­ Pittsburgh, PA CMU, CTTEC ­ PittsburghSiemens ­ Pittsburgh, PA Novelis Corporation ­ Atlanta, GA Expense

  3. Abundance and distribution of the western Gulf stone crab (Menippe adina) in Galveston Bay, Texas

    E-Print Network [OSTI]

    Boslet, Jane Murray

    1989-01-01T23:59:59.000Z

    studies h d t d ~ Md t h h ' d t' t from M. mercenaria (Bert 1986, Williams and Felder 1986) Due to this new systematic status, historical data based on M. mercenaria, most of which come from Florida, may not be applicable to characterize the natural..., and Melager Coves, Mid West Bay, Jones Bay, West Bay east of Anderson Ways, and south of the I ? 45 Causeway. Non-reef/channel sampling sites in West Bay included randomly selected areas representative of the remainder of the bay. Harsh/mudflat areas...

  4. Short-term variability of suspended sediment and phytoplankton in Tampa Bay, Florida: Observations from a coastal oceanographic tower

    E-Print Network [OSTI]

    Meyers, Steven D.

    dynamics in Tampa Bay with data collected between 8 December 2004 and 17 January 2005 from optical of reliable and cost-effective means for high-frequency sampling (e.g., Roegner et al., 2002). As a result, with a dredged channel (>10 m) extending from the mouth of the bay to the upper bay. Tampa Bay is often divided

  5. Sensitivity analysis of three-dimensional salinity simulations in North San Francisco Bay using the unstructured-grid SUNTANS model

    E-Print Network [OSTI]

    Fringer, Oliver B.

    and the confluence of the SacramentoSan Joaquin Rivers and comprises San Pablo Bay, Suisun Bay and Central Bay and San Joaquin rivers, while high inflows result in enhanced salinity stratification and gravitationalSensitivity analysis of three-dimensional salinity simulations in North San Francisco Bay using

  6. Strain-balanced InGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Van Den Broeck, D. M.; Hosalli, A. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-07-21T23:59:59.000Z

    InGaN/GaN multiple quantum well (MQW) structures suffer from a high amount of compressive strain in the InGaN wells and the accompanied piezoelectric field resulting in both a blue shift in emission and a reduction of emission intensity. We report the growth of In{sub x}Ga{sub 1?x}N/GaN strain-balanced multiple quantum wells (SBMQWs) grown on thick In{sub y}Ga{sub 1?y}N templates for x?>?y by metal organic chemical vapor deposition. SBMQWs consist of alternating layers of In{sub x}Ga{sub 1?x}N wells and GaN barriers under compressive and tensile stress, respectively, which have been lattice matched to a thick In{sub y}Ga{sub 1?y}N template. Growth of the In{sub y}Ga{sub 1?y}N template is also detailed in order to achieve thick, relaxed In{sub y}Ga{sub 1?y}N grown on GaN without the presence of V-grooves. When compared to conventional In{sub x}Ga{sub 1?x}N/GaN MQWs grown on GaN, the SBMQW structures exhibit longer wavelength emission and higher emission intensity for the same InN mole fraction due to a reduction in the well strain and piezoelectric field. By matching the average lattice constant of the MQW active region to the lattice constant of the In{sub y}Ga{sub 1?y}N template, essentially an infinite number of periods can be grown using the SBMQW growth method without relaxation-related effects. SBMQWs can be utilized to achieve longer wavelength emission in light emitting diodes without the use of excess indium and can be advantageous in addressing the green gap..

  7. High current gain InGaN=GaN HBTs with C operating temperature

    E-Print Network [OSTI]

    Asbeck, Peter M.

    with an $20 nm low-temperature (Tg 550 C) GaN buffer layer on a (0001) sapphire substrate. The layer 1018 cm3 Buffer GaN 2.5 mm Substrate Sapphire HBT device processing began by depositing a 100 nmHigh current gain InGaN=GaN HBTs with 300 C operating temperature D.M. Keogh, P.M. Asbeck, T. Chung

  8. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  9. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  10. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01T23:59:59.000Z

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  11. Covered Product Category: Industrial Luminaires (High/Low Bay)

    Broader source: Energy.gov [DOE]

    The Federal Energy Management Program (FEMP) provides acquisition guidance and Federal efficiency requirements for Industrial Luminaires (High/Low Bay). Federal laws and requirements mandate that agencies meet these efficiency requirements in all procurement and acquisition actions that are not specifically exempted by law.

  12. Bayes Estimation for the Marshall-Olkin Bivariate Weibull Distribution

    E-Print Network [OSTI]

    Kundu, Debasis

    Bayes Estimation for the Marshall-Olkin Bivariate Weibull Distribution Debasis Kundu1 & Arjun K. Gupta2 Abstract In this paper, we consider the Bayesian analysis of the Marshall-Olkin bivariate Weibull. This is a generalization of the Marshall-Olkin bivariate exponential dis- tribution. It is well known that the maximum

  13. UMCESUNIVERSITY OF MARYLAND CENTER for ENVIRONMENTAL SCIENCE CHESAPEAKE BAY

    E-Print Network [OSTI]

    Boynton, Walter R.

    : Utility of ConMon Data for Assessing Shallow Water Habitats 2-1 Community Metabolism: Use of ConMon Data on ConMon data collected along a eutrophication gradient from the Maryland Coastal Bays (A) Bishopville versus daily DO range (max DO min DO) based on ConMon data collected along a eutrophication gradient

  14. EA-1995: Trestle Bay Ecosystem Restoration Project, Clatsop County, Oregon

    Broader source: Energy.gov [DOE]

    The U.S. Army Corps of Engineers is preparing, with DOEs Bonneville Power Administration (BPA) as a cooperating agency, an EA that evaluates the potential environmental impacts of a proposal to improve estuary habitat in Trestle Bay. BPAs proposed action is to partially fund the proposal.

  15. Manganese Oxidation In A Natural Marine Environment- San Antonio Bay

    E-Print Network [OSTI]

    Neyin, Rosemary Ogheneochuko

    2013-04-12T23:59:59.000Z

    ................................................................................................................. 24 REFERENCES .................................................................................................................. 25 vii LIST OF FIGURES Page Figure 1 Study Area in ANWR, San Antonio Bay, Texas... by microorganisms, colloidal matter, mineral surfaces, or all three; and (3) is superoxide a significant proximal oxidant? 4 STUDY AREA The area chosen for this study was located in the Aransas National Wildlife Refuge (ANWR) in San Antonio...

  16. AT GUANTANAMO BAY: A HYBRID WIND-DIESEL SYSTEM

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND POWER AT GUANTANAMO BAY: A HYBRID WIND-DIESEL SYSTEM FOR THE US NAVY AT GUANTANAMO NAVAL BASE Laboratory and are actively developing what will be the world's largest wind-diesel hybrid electric plant. The pending installation of four 950-kW wind turbines to supplement the 22.8 MW diesel electricity plant

  17. Preliminary Investigation of Tracer Gas Reaeration Method for Shallow Bays

    E-Print Network [OSTI]

    Baker, Sarah H.; Holley, Edward R.

    apparently the first tests to be performed using the tracer gas technique in bays. As a result, the emphasis was on the development of techniques rather than on obtaining data. It appears that workable techniques have been developed, but they now need...

  18. Teaching Bayes' Rule: A Data Oriented Jim Albert 1

    E-Print Network [OSTI]

    Albert, James H.

    Teaching Bayes' Rule: A Data Oriented Approach Jim Albert 1 Bowling Green State University March 1997 1 Address for correspondence: Department of Mathematics and Statistics, Bowling Green State University, Bowling Green, OH 43403, USA. #12; Abstract There is a current emphasis on making

  19. Nitrogen Dynamics in Sandy Freshwater Sediments (Saginaw Bay, Lake Huron)

    E-Print Network [OSTI]

    of added 15NH4 + from lake water passing over dark sediment cores. Sediment-water fluxes of nitrogen at the sediment- water interface is derived from ammonium pro- duced from organic matter mineralization in surface ABSTRACT. Sediment-water nitrogen fluxes and transformations were examined at two sites in Sagi- naw Bay

  20. Fine structure of Fe-Co-Ga and Fe-Cr-Ga alloys with low Ga content

    SciTech Connect (OSTI)

    Kleinerman, Nadezhda M., E-mail: kleinerman@imp.uran.ru; Serikov, Vadim V., E-mail: kleinerman@imp.uran.ru; Vershinin, Aleksandr V., E-mail: kleinerman@imp.uran.ru; Mushnikov, Nikolai V., E-mail: kleinerman@imp.uran.ru; Stashkova, Liudmila A., E-mail: kleinerman@imp.uran.ru [Institute of Metal Physics UB RAS, S. Kovalevskaya str. 18, 620990 Ekaterinburg (Russian Federation)

    2014-10-27T23:59:59.000Z

    Investigation of Ga influence on the structure of Fe-Cr and Fe-Co alloys was performed with the use of {sup 57}Fe Mssbauer spectroscopy and X-ray diffraction methods. In the alloys of the Fe-Cr system, doping with Ga handicaps the decomposition of solid solutions, observed in the binary alloys, and increases its stability. In the alloys with Co, Ga also favors the uniformity of solid solutions. The analysis of Mssbauer experiments gives some grounds to conclude that if, owing to liquation, clusterization, or initial stages of phase separation, there exist regions enriched in iron, some amount of Ga atoms prefer to enter the nearest surroundings of iron atoms, thus forming binary Fe-Ga regions (or phases)

  1. TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer

    SciTech Connect (OSTI)

    Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

    2008-01-01T23:59:59.000Z

    It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

  2. Excitonic properties of strained wurtzite and zinc-blende GaNAlxGa1xN quantum dots

    E-Print Network [OSTI]

    Fonoberov, Vladimir

    Excitonic properties of strained wurtzite and zinc-blende GaNAlxGa1xN quantum dots Vladimir A 2003 We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite WZ of GaN QDs.18 Molecu- lar beam epitaxial growth in the StranskiKrastanov mode of wurtzite WZ Ga

  3. Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices

    E-Print Network [OSTI]

    Feenstra, Randall

    Morphological and compositional variations in strain- compensated InGaAsP/InGaP superlattices R of Technology, Kista, Sweden Abstract We have investigated the properties of strain-compensated InGaAsP/In- GaP superlattices, grown by metalorganic vapor phase epitaxy, with and without InP interlayers inserted in the InGaP

  4. Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1

    E-Print Network [OSTI]

    Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1 , Kristian of GaAs based self-aligned lasers based upon a single overgrowth. A lattice matched n-doped InGaP layer were exposed to oxygen. True buried heterostructures devices utilising InGaP clad- ding layers have

  5. Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates

    E-Print Network [OSTI]

    Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates M. J of unconventional alloys of InGaP with In fraction of 0.20.4 grown on fully relaxed GaAsP virtual substrates demonstrate growth of extremely high quality InGaP heterostructures which hold promise for fabrication

  6. Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M Abstract Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP band gap

  7. Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1

    E-Print Network [OSTI]

    Dietz, Nikolaus

    Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1 G. Ariyawansa,1 online 2 September 2009 A study of trap states in n+ -GaN/AlGaN heterostructures using electrical related absorption centers attributed to shallow Si-donor pinned to the AlGaN barrier , N-vacancy/ C

  8. High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop

    E-Print Network [OSTI]

    Itoh, Tatsuo

    High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop amplifier module using AlGaN/GaN high electron mobility transistor (HEMT) has been developed that covers radars and communications systems. GaN-based HEMT's for high power applications at microwave frequencies

  9. The Carolina Bay Restoration Project - Final Report 2000-2006.

    SciTech Connect (OSTI)

    Barton, Christopher

    2007-12-15T23:59:59.000Z

    A Wetlands Mitigation Bank was established at SRS in 1997 as a compensatory alternative for unavoidable wetland losses. Prior to restoration activities, 16 sites included in the project were surveyed for the SRS Site Use system to serve as a protective covenant. Pre-restoration monitoring ended in Fall 2000, and post restoration monitoring began in the Winter/Spring of 2001. The total interior harvest in the 16 bays after harvesting the trees was 19.6 ha. The margins in the opencanopy, pine savanna margin treatments were thinned. Margins containing areas with immature forested stands (bay 5184 and portions of bay 5011) were thinned using a mechanical shredder in November 2001. Over 126 hectares were included in the study areas (interior + margin). Planting of two tree species and the transplanting of wetland grass species was successful. From field surveys, it was estimated that approximately 2700 Nyssa sylvatica and 1900 Taxodium distichum seedlings were planted in the eight forested bays resulting in an average planting density of ? 490 stems ha-1. One hundred seedlings of each species per bay (where available) were marked to evaluate survivability and growth. Wetland grass species were transplanted from donor sites on SRS to plots that ranged in size from 100 300 m2, depending on wetland size. On 0.75 and 0.6 meter centers, respectively, 2198 plugs of Panicum hemitomon and 3021 plugs Leersia hexandra were transplanted. New shoots originating from the stumps were treated with a foliar herbicide (Garlon 4) during the summer of 2001 using backpack sprayers. Preliminary information from 2000-2004 regarding the hydrologic, vegetation and faunal response to restoration is presented in this status report.

  10. Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Uren, M. J.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Keller, S.; Kolluri, S.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of Santa Barbara California, Santa Barbara, California 93106 (United States)

    2014-08-11T23:59:59.000Z

    The existence of impact ionization as one of the open questions for GaN device reliability was studied in N-polar AlGaN/GaN high electron mobility transistors. Electroluminescence (EL) imaging and spectroscopy from underneath the device gate contact revealed the presence of hot electrons in excess of the GaN bandgap energy even at moderate on-state bias conditions, enabling impact ionization with hole currents up to several hundreds of pA/mm. The detection of high energy luminescence from hot electrons demonstrates that EL analysis is a highly sensitive tool to study degradation mechanisms in GaN devices.

  11. Michael J. Poston Atlanta, GA 30307

    E-Print Network [OSTI]

    Orlando, Thomas

    Page | 1 Michael J. Poston Atlanta, GA 30307 Michael.Poston@gatech.edu Cell: 770.561.4756 U.S. Citizen Education PhD Candidate in Chemistry Georgia Institute of Technology, Atlanta, GA August 2007 with Application to Lunar Observations," JGR Planets, 118, 105, doi: 10.1002/jgre.20025. Poston, M. J

  12. Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor

    E-Print Network [OSTI]

    Peale, Robert E.

    of materials systems such as GaAs/AlGaAs,3 InGaP/InGaAs/GaAs,4 GaN/AlGaN,2,5 and Si Ref. 1 have been explored

  13. DRAFT RICHMOND BAY CAMPUS LRDP | August 2013 The Richmond Bay Campus is a partnership between the University of Cali-

    E-Print Network [OSTI]

    Lee, Jason R.

    National Laboratory to create a state-of-the-art, inspirational, and sustainable place to produce world, the environment, health, and the global economy. In the near term, research at the Richmond Bay Campus will focus on cleaner methods to produce biofuels; an advanced understanding of the genomics of plants, microbes

  14. DRAFT RICHMOND BAY CAMPUS LRDP | November 2013 The Richmond Bay Campus is a partnership between the University of Cali-

    E-Print Network [OSTI]

    Lee, Jason R.

    is focused on the devel- opment of solutions for 21st century challenges in the areas of energy for innova- tion in the City of Richmond South Shoreline Area, serving as a catalyst for the development -- are directly supportive of the City's goals for the South Shoreline Area. The Richmond Bay Campus will serve

  15. FUPWG Meeting Agenda - Atlanta, GA | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...

  16. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Fujioka, H., E-mail: hfujioka@iis.u-tokyo.ac.jp [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); CREST, Japan Science and Technology Corporation (JST), 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 (Japan)

    2014-05-05T23:59:59.000Z

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  17. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar bandgap range. Index Terms--Epitaxy, GaAsP, InGaP, metamorphic. I. INTRODUCTION TODAY'S highest efficiency

  18. Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers

    SciTech Connect (OSTI)

    Ueda, O.; Wakao, K.; Yamaguchi, A.; Isozumi, S.; Komiya, S.

    1985-03-01T23:59:59.000Z

    Rapidly degraded InGaAsP/InGaP double-heterostructure lasers grown on (001)-oriented GaAs substrates by liquid phase epitaxy have been investigated by photolumi

  19. Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well

    SciTech Connect (OSTI)

    Zvonkov, B. N.; Nekorkin, S. M.; Vikhrova, O. V.; Dikareva, N. V., E-mail: dikareva@nifti.unn.ru [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

    2013-09-15T23:59:59.000Z

    The specific features of the emission characteristics of GaAs-based heterostructures with a GaAs{sub 1-x}Sb{sub x}-In{sub y}Ga{sub 1-y}As bilayer quantum well are studied. The heterostructures are grown by metal-organic chemical vapor deposition (MOCVD). With an analysis of previously reported data on the MOCVD growth process taken into account, the temperature range (560-580 Degree-Sign C), the relation between the fluxes emitted by the sources of Group-V and -III elements ( Less-Than-Or-Equivalent-To 1), and the order of layer growth for the production of the active region of a GaAs/InGaP laser heterostructure are determined experimentally. The active region is a GaAs{sub 0.75}Sb{sub 0.25}-In{sub 0.2}Ga{sub 0.8}As bilayer quantum well. For the structure, a 1075-nm electroluminescence signal attributed to indirect transitions between the valence band of the GaAs{sub 0.75}Sb{sub 0.25} layer and the conduction band of the In{sub 0.2}Ga{sub 0.8}As layer is observed. An increase in the continuous-wave pump current yields a decrease in the 1075-nm emission intensity and initiates stable lasing at a wavelength of 1022 nm at a threshold current density of 1.4 kA cm{sup -2} at room temperature. Lasing occurs at transitions direct in coordinate space.

  20. SODAR DATA FROM OYSTER BAY AT WINYAH BAY NATIONAL ESTUARINE RESEARCH RESERVE

    SciTech Connect (OSTI)

    Nichols, R.; Kohn, J.; Rigas, N.; Boessneck, E.; Kress, E.; Gayes, P.

    2013-04-29T23:59:59.000Z

    The SecondWind Triton is a SODAR (SOnic Detection And Ranging) sonic wind profiler (Triton sodar) system capable of profiling the wind characteristics up to 200m above the instrument. SODAR systems transmit acoustic chirps into the atmosphere and measure the backscattered signal returned to the device. The primary source of acoustic scattering is variations in air temperature, which cause changes in the refractive index of sound. By measuring the Doppler?shifted frequency of these returned signals, the Triton can calculate the winds speed and direction for the volume of air above the instrument, measured at ten fixed heights, known as station heights. The Triton is specifically designed for the purpose of wind energy resource assessment as it can remotely capture wind data at heights above ground where wind turbine rotors operate. The measurements made include horizontal wind speed and direction, vertical wind speed, and turbulence. Other integrated sensors provide time and location via GPS, barometric pressure, humidity, and the tilt of the instrument. The study area is located east of Georgetown, South Carolina in North Inlet ? Winyah Bay National Estuarine Research Reserve. The monitoring period for data in this report begins 5/14/2009 9:30:00 AM EST and ends 8/2/2010 11:40:00 AM EST.

  1. AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh

    E-Print Network [OSTI]

    Itoh, Tatsuo

    AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh Department-mail: ykchung@ee.ucla.edu Abstract - This paper presents the first single-ended AlGaN/GaN heterojunction field, respectively. For the frequency doubler with 1mm gate periphery AlGaN/GaN HFET, conversion gain of 0.17 d

  2. Materials Science and Engineering B59 (1999) 319322 Microcalorimetric absorption spectroscopy in GaNAlGaN

    E-Print Network [OSTI]

    Nabben, Reinhard

    1999-01-01T23:59:59.000Z

    Microcalorimetric measurements of small absorption coefficients have been performed on thin GaNAlGaN quantum wells in GaNAlGaN quantum wells Axel Goldner a, *, Axel Hoffmann a , Bernard Gil b , Pierre Lefebvre b at the energy of the GaN buffer and at the energy of the thick AlGaN barrier layers, we could also readily

  3. Al fraction induced effects on the capacitance characteristics -GaN/AlxGa1-xN IR detectors

    E-Print Network [OSTI]

    Dietz, Nikolaus

    substrate. As shown in Fig. 1(a), the device structures consist of a 0.2 m n+ -GaN top contact (emitter.1117/12.828156 Proc. of SPIE Vol. 7467 74670W-1 #12;(a) Sapphire Substrate n GaN Bottom Contact AlxGa1-xN Barrier n GaNAl fraction induced effects on the capacitance characteristics of n+ -GaN/AlxGa1-xN IR detectors

  4. Improvement of breakdown voltage in InGaP/InGaAs/GaAs heterostructure MESFETs for MMICs

    SciTech Connect (OSTI)

    Koh, Inoue; Yamane, Yasuro; Shiojima, Kenji [NTT LSI Lab., Kanagawa (Japan)] [and others

    1995-12-31T23:59:59.000Z

    This paper describes the trade-off between breakdown voltage and RF performance of InGaP/InGaAs/GaAs heterostructure MESFETs for power amplifiers and oscillators in multi-function MMICs in the millimeter-wave range. The authors successfully improved both gate-drain and drain-source breakdown voltages while maintaining excellent high-frequency performance by using a double-layered gate consisting of WSiN with different nitrogen contents, and by varying epitaxial layer thickness and implantation dose.

  5. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jlich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

    2011-01-07T23:59:59.000Z

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  6. Necessity of Ga prelayers in GaAs/Ge growth using gas-source molecular beam epitaxy

    E-Print Network [OSTI]

    in a highly defective GaAs layer.as5 Recently, InGaP light-emitting diodes have been fabricated on Si using

  7. High-efficiency radiation-resistant InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Takamoto, T. [Toyota Technological Inst., Tempaku, Nagoya (Japan); [Japan Energy Corp., Toda, Saitama (Japan); Yamaguchi, M.; Taylor, S.J. [Toyota Technological Inst., Tempaku, Nagoya (Japan); Ikeda, E.; Agui, T.; Kurita, H. [Japan Energy Corp., Toda, Saitama (Japan)

    1997-12-31T23:59:59.000Z

    A world-record efficiency of 26.9% (AM0, 28 C) has been obtained for InGaP/GaAs tandem solar cells fabricated by the MOCVD method. The radiation resistance of the InGaP/GaAs tandem solar cells has also been evaluated following 1 MeV electron irradiation. Degradation in the tandem cell performance has been confirmed to be mainly attributed to large degradation in the GaAs bottom cell, which features a highly doped base layer. Similar radiation-resistance with GaAs-on-Ge cells has been observed for the InGaP/GaAs tandem cell. However, some recovery of the tandem cell performance has been found due to minority-carrier injection under light illumination of forward bias, which causes defect annealing in InGaP cells. The optimal design of the InGaP base layer thickness for current matching at end of life (EOL) (after irradiation with 10{sup 15} electrons cm{sup {minus}2}) has been examined.

  8. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

    2014-09-08T23:59:59.000Z

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  9. Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells

    E-Print Network [OSTI]

    Alpay, S. Pamir

    Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple InxGa1-xN(InGaN)/GaN multilayers on the In composition and misfit strain. The results indicate that for non-polar m-plane configurations with 1210InGaN//1210GaN and 0001InGaN//0001GaN epitaxial

  10. Ambient dissolved oxygen concentrations in Delaware's Inland Bays. Final report, June 6, 1984

    SciTech Connect (OSTI)

    Biggs, R.B.

    1984-01-01T23:59:59.000Z

    Ambient dissolved oxygen concentrations were measured at dawn during August, 1983, in Rehoboth and Indian River Bays. In Indian River Bay, 59% of the D.O. measurements were below the State minimum water quality standard of 5 mg L/sup -1/, while in Rehoboth Bay 17% of the values fail to meet the State standards. Diurnal dissolved oxygen curves measured at 5 stations in the Bays and tributary creeks, provide evidence that, although the Bays are in reasonable balance with respect to apparent net daytime photosynthesis (Pa) and nighttime respiration (Rn), the absolute values of Pa and Rn are very high, compared with other coastal ecosystems, except for central Rehoboth Bay. These conclusions are consistent with the annual nutrient loads to the systems, which are about double for Indian River when contrasted with Rehoboth. 11 references, 1 figure, 7 tables.

  11. Investigation of tidal power, Cobscook Bay, Maine. Environmental Appendix

    SciTech Connect (OSTI)

    Not Available

    1980-08-01T23:59:59.000Z

    This report presents information regarding existing terrestrial and marine resources and water quality conditions in the Cobscook Bay area. A preliminary assessment of impacts from a tidal power project is also presented and data gaps are identified. Reports contained in the appendix were prepared by the U.S. Fish and Wildlife Service, the National Marine Fisheries Service, the University of Maine at Orino, School of Forestry Resources and the U.S. Army Corps of Engineers.

  12. Submarine geomorphology of Eastern Ross Sea and Sulzberger Bay, Antarctica

    E-Print Network [OSTI]

    Lepley, Larry Kent

    1964-01-01T23:59:59.000Z

    SUBMARINE GEOMORPHOLOGY OF EASTERN ROSS SEA AND SULZBERGER BAY, ANTARCTICA A Thocis By Submitted to the Graduate College of the Texas A 6 H Universicy in partial fulfillment of the requirements for the degree of MASTER OF SCIENCE lanum...- ': Bsfhpeotrg l. Outer Snelf ?. ? Q ? ~elf =Bepr eeoione 3. inner Shelf 4~ B id gee S ed haunts l. Antaratic Uorine Sedhaento B seclhnents of Eastern Rom ssa - suleborgsr Boy Dissuasion Outer Shelf a. Ihwtstio, Xsostatio, snd Qlaoia1 Sister@ b. ?h igin...

  13. Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2014-04-28T23:59:59.000Z

    Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

  14. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. [National Kaohsiung Normal University, Department of Electronic Engineering (China)], E-mail: jhtsai@nknucc.nknu.edu.tw; Chiu, S.-Y.; Lour, W.-S. [National Taiwan Ocean University, Department of Electrical Engineering (China); Guo, D.-F. [Air Force Academy, Department of Electronic Engineering (China)

    2009-07-15T23:59:59.000Z

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  15. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

    2014-04-24T23:59:59.000Z

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  16. Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Li, Z. L.; Wang, X. Q.; Huang, C. C.; Rong, X.; Xu, F. J.; Tang, N.; Qin, Z. X.; Shen, B. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)] [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Sang, L. W.; Sumiya, M. [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)] [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Chen, Y. H. [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China)] [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)] [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2013-05-13T23:59:59.000Z

    Intersubband transitions (ISBT) of AlGaN/GaN multiple quantum wells (MQWs) with wavelength towards atmospheric window (3-5 {mu}m) have been investigated. A Ga-excess epitaxial method is used in the molecular beam epitaxy leading to ultra-sharp interface and negligible elements inter-diffusion. The absorption peak wavelength of the ISBT was successfully tuned in the range of 3-4 {mu}m by modifying the GaN well thickness from 2.8 to 5.5 nm. It was further found that the polarization charge density of the AlGaN/GaN MQWs was about -0.034 C/m{sup 2} which gave rise to blueshift of the ISBT wavelength and thus partially compensated its redshift with increasing well thickness.

  17. InGaN/GaN single-quantum-well microdisks

    SciTech Connect (OSTI)

    Hsu, Yu-Chi; Lo, Ikai; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)

    2012-06-11T23:59:59.000Z

    We have grown In{sub x}Ga{sub 1-x}N/GaN quantum wells atop GaN microdisk with {gamma}-LiAlO{sub 2} substrate by using plasma-assisted molecular beam epitaxy. The structural and optical properties of the samples were analyzed by transmission electron microscopy, x-ray diffraction, cathodoluminescence, and photoluminescence measurements. Based on the measured results, we obtained the indium concentration of the In{sub x}Ga{sub 1-x}N/GaN single quantum well to be x = 0.25 with a band-gap energy of 2.31 eV, which is consistent with the bowing effect of bulk In{sub x}Ga{sub 1-x}N: E{sub g}(x) = [3.42 - x * 2.65 - x * (1 - x) * 2.4] eV.

  18. Weighting and Bayes Nets for Rollup of Surveillance Metrics

    SciTech Connect (OSTI)

    Henson, Kriste [Los Alamos National Laboratory; Sentz, Kari [Los Alamos National Laboratory; Hamada, Michael [Los Alamos National Laboratory

    2012-04-30T23:59:59.000Z

    The LANL IKE team proposes that the surveillance metrics for several data stream that are used to detect the same failure mode be weighted. Similarly, the failure mode metrics are weighted to obtain a subsystem metric. E.g., if there n data streams (nodes 1-n), the failure mode (node 0) metric is obtained as M{sub 0} = w{sub 1}M{sub 1} + {hor_ellipsis} + w{sub n}M{sub n}, where {Sigma}{sub i=1}{sup n} w{sub i} = 1. This proposal has been implemented with Bayes Nets using the Netica/IKE software by specifying an appropriate conditional probability table (CPT). This CPT is calculated using the same form as (1), where the data stream metrics for the true (T) and false (F) states are replaced by 1 and 0, respectively. Then using this CPT, the failure mode metric calculated by Netica/IKE equals (1). This result has two nice features. First, the rollup Bayes nets is doing can be easily explained. Second, because Bayes Nets can implement this rollup using Netica/IKE, then data marshalling (allocating next year's budget) can be studied. A proof that the claim 'failure mode metric calculated by Netica/IKE equals (1)' for n = 2 and n = 3 follows as well as the sketch of a proof by induction for general n.

  19. State of the Chesapeake Bay: second annual monitoring report, compendium. Report for January 1984-September 1985

    SciTech Connect (OSTI)

    Lynch, M.P.; Krome, E.C.

    1987-04-01T23:59:59.000Z

    The report is a summary of information collected at stations around the Chesapeake Bay. It is designed to be a more detailed/technical companion to the State Of The Bay Summary Report. It reports the results of the monitoring of the Chesapeake Bay in terms of its physical and chemical makeup (sediments, the distribution of toxics), the living resources, (plankton, benthos, submerged aquatic vegetation, birds), and the Patuxent River, as a case history.

  20. Atomic layer deposition of GaN using GaCl3 and NH3 Oh Hyun Kim, Dojun Kim, and Tim Andersona

    E-Print Network [OSTI]

    Anderson, Timothy J.

    be grown at lower temperature than by CVD. As example, ALD growth of device quality GaAs, GaP, and InGaP

  1. Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures

    SciTech Connect (OSTI)

    Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

    2014-01-13T23:59:59.000Z

    In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

  2. AlGaN/GaN field effect transistors for power electronicsEffect of finite GaN layer thickness on thermal characteristics

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Anaya Calvo, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)] [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom); Stoffels, S.; Marcon, D. [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)] [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)

    2013-11-11T23:59:59.000Z

    AlGaN/GaN heterostructure field effect transistors with a 150?nm thick GaN channel within stacked Al{sub x}Ga{sub 1?x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60?W m{sup ?1} K{sup ?1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.

  3. InGaAsP/InGaP buried heterostructure lasers at 810 nm

    SciTech Connect (OSTI)

    Wakao, K.; Isozumi, S.; Nishi, H.; Ohsaka, S.

    1984-12-01T23:59:59.000Z

    InGaAsP/InGaP buried heterostructure lasers emitting at 810 nm have been grown on GaAs substrates using two-step liquid-phase epitaxy. A threshold current of 79 mA and an external differential quantum efficiency of 26% are obtained. Fundamental transverse mode operation up to 3 mW is achieved in the laser with the active region of 3.5 ..mu..m wide.

  4. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

    2014-04-24T23:59:59.000Z

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  5. Ohmic contacts to n-GaSb

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01T23:59:59.000Z

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  6. The structure of GaAs/Si(211) heteroepitaxial layers

    SciTech Connect (OSTI)

    Liliental-Weber, Z.; Weber, E.R.; Washburn, J.; Liu, T.Y.; Kroemer, H.

    1985-05-01T23:59:59.000Z

    Gallium arsenide films grown on (211)Si by molecular-beam epitaxy have been investigated using transmission electron microscopy. The main defects observed in the alloy were of misfit dislocations, stacking faults, and microtwin lamellas. Silicon surface preparation was found to play an important role on the density of defects formed at the Si/GaAs interface. Two different types of strained-layer superlattices, InGaAs/InGaP and InGaAs/GaAs, were applied either directly to the Si substrate, to a graded layer (GaP-InGaP), or to a GaAs buffer layer to stop the defect propagation into the GaAs films. Applying InGaAs/GaAs instead of InGaAs/InGaP was found to be more effective in blocking defect propagation. In all cases of strained-layer superlattices investigated, dislocation propagation was stopped primarily at the top interface between the superlattice package and GaAs. Graded layers and unstrained AlGaAs/GaAs superlattices did not significantly block dislocations propagating from the interface with Si. Growing of a 50 nm GaAs buffer layer at 505/sup 0/C followed by 10 strained-layer superlattices of InGaAs/GaAs (5 nm each) resulted in the lowest dislocation density in the GaAs layer (approx.5 x 10/sup 7//cm/sup 2/) among the structures investigated. This value is comparable to the recently reported density of dislocations in the GaAs layers grown on (100)Si substrates. Applying three sets of the same strained layers decreased the density of dislocations an additional approx.2 to 3 times.

  7. Building America Whole-House Solutions for Existing HomesBay...

    Broader source: Energy.gov (indexed) [DOE]

    non-invasive retrofit measures. Bay Ridge Gardens-Mixed Humid Affordable Multifamily Housing Deep Energy Retrofit More Documents & Publications Building America Whole-House...

  8. Current Perspectives on the Physical and Biological Processes of Humboldt Bay

    E-Print Network [OSTI]

    Schlosser, S. C.; Rasmussen, R.

    2007-01-01T23:59:59.000Z

    1893 and began ditching and dredging the marshland from thetions and Maintenance Dredging. Draft Program- matic 5-Yearwharf was abandoned. Early Dredging Humboldt Bay has been

  9. The hunt for theta13 at the Daya Bay nuclear power plant

    E-Print Network [OSTI]

    Wei Wang; for the Daya Bay collaboration

    2009-10-23T23:59:59.000Z

    The Daya Bay reactor neutrino experiment is located at the Daya Bay nuclear power plant in Shenzhen, China. The experiment deploys eight "identical" antineutrino detectors to measure antineutrino fluxes from six 2.9 GW_{th} reactor cores in three underground experimental halls at different distances. The target zone of the Daya Bay detector is filled with 20 t 0.1% Gd doped LAB liquid scintillator. The baseline uncorrelated detector uncertainty is ~0.38% using current experimental techniques. Daya Bay can reach a sensitivity of <0.01 to $sin^2 2theta_{13}$ with baseline uncertainties after 3 years of data taking.

  10. Current Perspectives on the Physical and Biological Processes of Humboldt Bay

    E-Print Network [OSTI]

    Schlosser, S. C.; Rasmussen, R.

    2007-01-01T23:59:59.000Z

    Humboldt Bay. Fab r icia sabella (Ehrenberg 1937) SABELLIDAEin estuarine mud. Banse (1979) reports Fab r icia sabellasabella from Newcastle Island, British Columbia; and

  11. Over 30{percent} efficient InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Kurita, H. [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan); Ohmori, M. [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)] [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)

    1997-01-01T23:59:59.000Z

    A two-terminal monolithic InGaP/GaAs tandem solar cell with a new efficiency record of 30.28{percent} is realized with a practical large area of 4 cm{sup 2} under one-sun air-mass 1.5 global illumination. We report improvements of the tandem cell performance by introducing a double-hetero (hereafter DH) structure InGaP tunnel junction, in which the InGaP layers are surrounded by high band gap AlInP barriers. The DH structure by AlInP barriers increase the peak current of InGaP tunnel junction. The AlInP barrier directly below the InGaP top cell, which takes the part of a back surface field (hereafter BSF) layer, is found to be considerably effective in reflecting minority carriers in the top cell. The AlInP BSF layer does not only form a high potential barrier but also prevents the diffusion of zinc from a high doped tunnel junction toward the top cell during epitaxial growth. Furthermore, an InGaP tunnel junction reduces the absorption loss, which exists in a GaAs tunnel junction, and increases the photogenerated current in the GaAs bottom cell. {copyright} {ital 1997 American Institute of Physics.}

  12. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23T23:59:59.000Z

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  13. Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Pomeroy, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)

    2014-02-14T23:59:59.000Z

    We demonstrate the ability of confocal Raman thermography using a spatial filter and azimuthal polarization to probe vertical temperature gradients within the GaN buffer layer of operating AlGaN/GaN high electron mobility transistors. Temperature gradients in the GaN layer are measured by using offset focal planes to minimize the contribution from different regions of the GaN buffer. The measured temperature gradient is in good agreement with a thermal simulation treating the GaN thermal conductivity as homogeneous throughout the layer and including a low thermal conductivity nucleation layer to model the heat flow between the buffer and substrate.

  14. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    with the active thermoelectric cooling implemented on the same material system can improve the device performance, for the pro- posed cooling system should also be based on GaN. To real- ize this, the high-efficiency Ga,6 Great progress has been achieved in GaN-based microwave technology. GaN transistors with very high

  15. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01T23:59:59.000Z

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  16. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

    E-Print Network [OSTI]

    The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs 1. Introduction, performance of these devices has been limited by self-heating [1] [6]. Thus, accurate modeling of heat diffusion and self-heating effects in AlGaN/GaN heterostructures and device optimization based

  17. InAsGaPInGaP high-temperature power Schottky rectifier and J. M. Woodall

    E-Print Network [OSTI]

    Woodall, Jerry M.

    C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion is thought to be due to strong covalent bonding at the InAs/GaP interface. The InAs/GaP heterointerface effectively blocks impurity diffusion. Since InGaP is superior to GaP for high-power applica- tions, as shown

  18. GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

    E-Print Network [OSTI]

    GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer K.M. Groom, B fabrication, is demonstrated. An n-doped InGaP layer is utilised for both electrical and optical confinement-doped InGaP current blocking layer that also provides optical confinement. This tech- nology relies

  19. GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization

    E-Print Network [OSTI]

    Wetzel, Christian M.

    GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical 12180-3590, U.S.A. ABSTRACT The wide bandgap polar semiconductors GaN and ZnO and their related alloys fields, and surface terminations. With a small lattice mismatch of ~1.8 % between GaN and Zn

  20. Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates

    E-Print Network [OSTI]

    Nabben, Reinhard

    Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates: time-resolved photoluminescence, quantum dots, InGaN, Si substrate There exists a strong continuous expensive and are limited in size. Thus, heteroepitaxial growth of GaN on silicon substrates seems

  1. Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    -emitting diodes LEDs on low-defect density bulk GaN substrate, but not in green LEDs on sapphire substrate an ideal substrate for homoepitaxial growth. Here we study the microstructural properties of green GaInN/GaN-Koehler force10 resulting from a macroscopic relaxation of strain. II. CRYSTAL GROWTH c plane bulk GaN substrate

  2. Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    quantum well (QW) light-emitting diodes (LEDs) grown on sapphire and bulk GaN substrate by micro efficiency in dies grown on GaN substrates with a thermal resistance of 75 K/W. For dies on sapphire of GaN-based blue and green LEDs grown on sapphire and GaN substrates using micro-Raman spectroscopy

  3. Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy

    E-Print Network [OSTI]

    Nabben, Reinhard

    . The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate-grown heterostructures can drastically be reduced by using a template of MOVPE-GaN on the sapphire substrate, which leadsCorrelation between structural properties and optical amplification in InGaN/GaN heterostructures

  4. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04T23:59:59.000Z

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  5. Metastable states in InGaN/GaN MQW structures doped with Sm, Eu, and Eu + Sm

    SciTech Connect (OSTI)

    Mezdrogina, M. M., E-mail: Margaret.M@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Kozhanova, Yu. V. [St. Petersburg State Polytechnical University (Russian Federation)

    2013-04-15T23:59:59.000Z

    Measurements of the microphotoluminescence (microPL) spectra of InGaN/GaN:Sm and InGaN/GaN:Eu quantum well (QW) structures show that the action of a magnetic field gives rise to Van Vleck paramagnetism for Eu{sup 3+} and Sm{sup 3+}. The macrophotoluminescence (macroPL) spectra recorded after measuring the microPL spectra of InGaN/GaN QW structures doped with Sm or Eu + Sm at a high excitation level (>10{sup 23} photons cm{sup -2} s{sup -1}) in magnetic fields contain no QW emission lines which are present in the macroPL spectra recorded before these microPL measurements. This is indicative of the presence of photoinduced defects. Annealing of the InGaN/GaN:Sm and InGaN/GaN:(Eu + Sm) structures reduces the concentration of photoinduced defects.

  6. Gas-source molecular beam epitaxial growth and characterization of the (Al,In,Ga)NP/GaP material system and Its applications to light-emitting diodes

    E-Print Network [OSTI]

    Odnoblyudov, Vladimir

    2006-01-01T23:59:59.000Z

    on metamorphic growth of InGaP layers on GaP substrates, astemperature amber photoluminescence from InGaP QWs, grownon a metamorphic InGaP layer. References: Fred Shubert E. ,

  7. Physics and Physical Oceanography Data Report 2000-2 Tow-Yo and Temperature Data from Trinity Bay,

    E-Print Network [OSTI]

    deYoung, Brad

    Physics and Physical Oceanography Data Report 2000-2 Tow-Yo and Temperature Data from Trinity Bay Oeanography Memorial University of Newfoundland St. John's, Newfoundland A1B 3X7 #12;ii Abstract Trinity Bay

  8. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06T23:59:59.000Z

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  9. ccsd-00000821(version1):6Nov2003 Alloy effects in Ga1-xInxN/GaN heterostructures

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    ccsd-00000821(version1):6Nov2003 Alloy effects in Ga1-xInxN/GaN heterostructures Duc-Phuong Nguyen, France We show that the large band offsets between GaN and InN and the heavy carrier effec- tive masses preclude the use of the Virtual Crystal Approximation to describe the electronic structure of Ga1-xInxN/GaN

  10. DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS

    E-Print Network [OSTI]

    Honsberg, Christiana

    DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS Omkar Jani1 with a band gap of 2.4 eV or greater. InxGa1-xN is one of a few alloys that can meet this key requirement. InGaN.4 eV. InGaN has the appropriate optical properties and has been well demonstrated for light

  11. AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD

    E-Print Network [OSTI]

    Boyer, Edmond

    AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD R. Meunier1 , A, 38054 Grenoble Cedex 9, France 2 LAAS-CNRS, 7 Avenue du Colonel Roche, 31400 Toulouse, France AlGaN /GaN behavior. Those trapped charges can be associated to the carbon contamination of the AlGaN surface

  12. Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

    E-Print Network [OSTI]

    Bowers, John

    Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth S for publication 5 January 1999 The emission mechanisms of bulk GaN and InGaN quantum wells QWs were studied suggest that TDs simply reduce the net volume of light-emitting area. This effect is less pronounced in InGaN

  13. Comparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities

    E-Print Network [OSTI]

    Boyer, Edmond

    , transmission and absorption spectra of bulk GaAs, GaN and ZnO microcavities, in order to compareComparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities SAs and GaN microcavities. PACS numbers: 78.67.-n, 71.36.+c, 78.20.Ci, 78.55.Cr, 78.55.Et Keywords: polariton

  14. Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells

    E-Print Network [OSTI]

    As, Donat Josef

    molecular beam epitaxy on free standing 3C-SiC 001 substrates. During growth of Al0.15Ga0.85N/GaN quantum growth of the quantum structures an 800 nm thick GaN buffer layer was deposited on the 3C-SiC substrate. The buffer and the c-AlGaN/GaN quantum wells were grown at a substrate temperature of 720 C. The layers were

  15. Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template

    SciTech Connect (OSTI)

    Wang, Y.D.; Zang, K.Y.; Chua, S.J.; Tripathy, S.; Chen, P.; Fonstad, C.G. [Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2005-12-19T23:59:59.000Z

    We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

  16. AlGaN/GaN HEMT With 300-GHz fmax

    E-Print Network [OSTI]

    Chung, Jinwook W.

    We report on a gate-recessed AlGaN/GaN high-electron mobility transistor (HEMT) on a SiC substrate with a record power-gain cutoff frequency (f[subscript max]). To achieve this high f[subscript max], we combined a low-damage ...

  17. Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

    E-Print Network [OSTI]

    Piner, Edwin L.

    This letter describes a gate-first AlGaN/GaN high-electron mobility transistor (HEMT) with a W/high-k dielectric gate stack. In this new fabrication technology, the gate stack is deposited before the ohmic contacts, and ...

  18. High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

    E-Print Network [OSTI]

    Hartono, Haryono

    The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. ...

  19. Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors

    E-Print Network [OSTI]

    Lu, Bin

    In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...

  20. Investigation of Strain in AlGaN/GaN Multi Quantum Wells by Complementary Techniques

    SciTech Connect (OSTI)

    Devaraju, G.; Sathish, N.; Pathak, A. P. [School of Physics, University of Hyderabad, Central University (P.0), Hyderabad 500 046 (India); Dhamodaran, S. [Department of Physics, Indian Institute of Technology, IIT P O, Kanpur UP 208016 (India); Gaca, J.; Wojcik, M. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Turos, A. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Soltan Institute for Nuclear Studies, Swierk/Otwock, Warsaw (Poland); Arora, B. M. [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai-400 005 (India)

    2009-03-10T23:59:59.000Z

    Al{sub 0.49}Ga{sub 0.51}N(12 nm)/GaN (13 nm) Multi Quantum Wells of 15 periods are grown on sapphire by MOCVD technique. GaN/AlN, each of thickness 200 nm and 20 nm respectively, are used as buffer layers between substrate and epilayer to incorporate the strain in epilayers. It is a well established technique to engineer the band gap in Al{sub x}Ga{sub 1-x}N by adjusting alloy composition. These samples are used in visible and UV light emitters. In the present study, we employ a photoluminescence technique to estimate the composition and luminescence peak positions of AlGaN and GaN. Crystallinity and quality of interfaces have been studied by Rocking curve scan. The Threading Dislocations formed at the GaN buffer layer travel across the entire layers to the surface to form good quality films. Photo-luminescence results show a very sharp GaN peak at 3.4 eV, as observed and reported by others, which shows that samples are free from point defects.

  1. Enhanced Land Subsidence and Seidment Dynamics in Galveston Bay- Implications for Geochemical Processes and Fate and Transport of Contaminants

    E-Print Network [OSTI]

    Almukaimi, Mohammad E

    2013-07-05T23:59:59.000Z

    ENHANCED LAND SUBSIDENCE AND SEDIMENT DYNAMICS IN GALVESTON BAY- IMPLICATIONS FOR GEOCHEMICAL PROCESSES AND FATE AND TRANSPORT OF CONTAMINANTS A Thesis by MOHAMMAD ALMUKAIMI Submitted to the Office of Graduate Studies of Texas A... August 2013 Major Subject: Oceanography Copyright 2013 Mohammad Almukaimi ii ABSTRACT Galveston Bay is the second largest estuary in the Gulf of Mexico. The bay?s watershed and shoreline contains one of the largest concentrations...

  2. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [LNESS and Dipartimento di Scienza dei Materiali, Universit di Milano Bicocca, Via Cozzi 55, I20125 Milano (Italy); Fedorov, Alexey [LNESS and CNRIFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21T23:59:59.000Z

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nanodisks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.310.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(2.11) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III adatoms on IIIV crystal surfaces and the fabrication of designable nanostructures.

  3. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

    1997-05-01T23:59:59.000Z

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  4. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02T23:59:59.000Z

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  5. SOME EFFECTS OF HYDRAULIC DREDGING AND COASTAL DEVELOPMENT IN BOCA CIEGA BAY, FLORIDA 1

    E-Print Network [OSTI]

    SOME EFFECTS OF HYDRAULIC DREDGING AND COASTAL DEVELOPMENT IN BOCA CIEGA BAY, FLORIDA 1 BY JOHN L. PETERSBURG BEACH, FLA. 33706 ABSTRACT Filling of 1,400 hectares (3,500 acres) of bay by hy- draulic dredging in dredged ItreltS wit.h those in relatively undisturbed ttreas. Hydl'ltulic dredging becmue. ltll ltccepted

  6. Mercury speciation in Galveston Bay, Texas: the importance of complexation by natural organic ligands

    E-Print Network [OSTI]

    Han, Seunghee

    2005-02-17T23:59:59.000Z

    of the requirements for the degree of DOCTOR OF PHILOSOPHY December 2004 Major Subject: Oceanography MERCURY SPECIATION IN GALVESTON BAY, TEXAS: THE IMPORTANCE OF COMPLEXATION BY NATURAL ORGANIC LIGANDS A Dissertation by SEUNGHEE HAN.... Cifuentes (Member) Paul A. Lindahl (Member) Wilford D. Gardner (Head of Department) December 2004 Major Subject: Oceanography iii ABSTRACT Mercury Speciation in Galveston Bay, Texas: The Importance of Complexation...

  7. Feeding habits of the Guiana dolphin, Sotalia guianensis (Cetacea: Delphinidae), in Norte Bay,

    E-Print Network [OSTI]

    Simes-Lopes, Paulo Csar

    Feeding habits of the Guiana dolphin, Sotalia guianensis (Cetacea: Delphinidae), in Norte Bay contents of 18 Guiana dolphins stranded or accidentally caught by fishing around Norte Bay of Santa del delfn costero, Sotalia guianenSiS (Cetacea: Delphinidae), en la baha Norte al sur de Brasil

  8. REPRODUCTIVE LONGEVITY OF DRIFTING KELP MACROCYSTIS PYRIFERA (PHAEOPHYCEAE) IN MONTEREY BAY, USA1

    E-Print Network [OSTI]

    California at Santa Cruz, University of

    REPRODUCTIVE LONGEVITY OF DRIFTING KELP MACROCYSTIS PYRIFERA (PHAEOPHYCEAE) IN MONTEREY BAY, USA1 index words: dispersal; drifting; germination; kelp; longevity; Macrocystis; Monterey Bay; rafts, especially for seaweeds (Norton 1992, Eckman 1996, Kinlan and Gaines 2003, Reed et al. 2006). The giant kelp

  9. Nitrogen sources and cycling in the San Francisco Bay Estuary: A nitrate dual isotopic composition approach

    E-Print Network [OSTI]

    Paytan, Adina

    as 25.0%) at the SacramentoSan Joaquin River delta region give rise to a wide range of d18ONO3 valuesNitrogen sources and cycling in the San Francisco Bay Estuary: A nitrate dual isotopic composition18O) within the estuarine system of San Francisco (SF) Bay, California, to explore the utility

  10. Optimal Pollution Mitigation in Monterey Bay Based on Coastal Radar Data and Nonlinear

    E-Print Network [OSTI]

    Marsden, Jerrold

    Optimal Pollution Mitigation in Monterey Bay Based on Coastal Radar Data and Nonlinear Dynamics run-off which is a typical source of pollution in the bay. We show that a HF radar-based pollution release scheme using this flow structure reduces the impact of pollution on the coastal envi- ronment

  11. MODELING PHYTOPLANKTON ABUNDANCE IN SAGINAW BAY, LAKE HURON: USING ARTIFICIAL NEURAL NETWORKS TO DISCERN FUNCTIONAL INFLUENCE

    E-Print Network [OSTI]

    MODELING PHYTOPLANKTON ABUNDANCE IN SAGINAW BAY, LAKE HURON: USING ARTIFICIAL NEURAL NETWORKS; phytoplankton Abbreviations: ANN, artificial neural network; Cl , chloride; DOC, dissolved organic carbon; Kd Phytoplankton abundance, as chl a, in Saginaw Bay, Lake Huron was modeled using arti- ficial neural networks

  12. The Catalytic Chemistry of HCN+NO over Na- and Ba-Y, FAU: An...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The Catalytic Chemistry of HCN+NO over Na- and Ba-Y, FAU: An In Situ FTIR and TPDTPR Study. The Catalytic Chemistry of HCN+NO over Na- and Ba-Y, FAU: An In Situ FTIR and TPDTPR...

  13. Time Series Measurements of Temperature, Current Velocity, and Sediment Resuspension in Saginaw Bay

    E-Print Network [OSTI]

    Time Series Measurements of Temperature, Current Velocity, and Sediment Resuspension in Saginaw Bay and verification. These measurements will be made as part of this project. Measurements of sediment resuspension sediment resuspension in the bay during the spring. Measurements of sediment resuspension are important

  14. The influence of oceanic swell on flows over an estuarine intertidal mudflat in San Francisco Bay

    E-Print Network [OSTI]

    Talke, Stefan

    The influence of oceanic swell on flows over an estuarine intertidal mudflat in San Francisco Bay S mudflat. The observations indicate that long-period (1020 s) ocean waves are a potentially important, we deployed an autonomous SonTek Hydra system on a mudflat in Central San Francisco Bay, and measured

  15. Final Report for Sea-level Rise Response Modeling for San Francisco Bay Estuary Tidal

    E-Print Network [OSTI]

    Fleskes, Joe

    i Final Report for Sea-level Rise Response Modeling for San Francisco Bay Estuary Tidal Marshes Refuge in northern San Francisco Bay, California. #12;iii Final Report for Sea-level Rise Response)................................................................... 7 Sea-level rise scenario model inputs

  16. Hydrodynamic models for San Francisco Bay: An overview of what we can model, when

    E-Print Network [OSTI]

    S SS Chla x/X2 z/h(x) #12;Models can influence policy: Mixing in the LSZ (1993) Dispersion via tidal shear in Suisun Bay (2D calculations by Jon Burau) #12;Current models: South Bay Salt Pond sediment average Thermal front near Dumbarton Bridge #12;More complicated models: Sediment transport in South SF

  17. Wastewater Discharge, Nutrient Loading, and Dissolved Oxygen Dynamics in a Shallow Texas Bay

    E-Print Network [OSTI]

    Schroer, Lee Allen

    2014-05-07T23:59:59.000Z

    In Oso Bay, a wastewater treatment plant acts as a source of eutrophication and may have measureable impact on the health of the bay. The objectives of this study were to create a model for modeling dissolved oxygen concentrations over time...

  18. Large internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko, Gerald Hnig, Christian Kindel, Sven Rodt, Andr Strittmatter et al.

    E-Print Network [OSTI]

    Nabben, Reinhard

    Large internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko, Gerald Hnig, Christian transitions in wurtzite InGaN/GaN coupled quantum dot nanowire heterostructures with polarization internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko,a Gerald Hnig, Christian Kindel, Sven

  19. Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Guibao Xu, Guan Sun, Yujie J. Ding, Hongping Zhao, Guangyu Liu et al.

    E-Print Network [OSTI]

    Gilchrist, James F.

    Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Guibao Xu, Guan Sun, Yujie overgrowth on residual strain and In incorporation in a-plane InGaN/GaN quantum wells on r- sapphire substrates J. Appl. Phys. 113, 023506 (2013) Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple

  20. Quantum confinement in GaP nanoclusters

    SciTech Connect (OSTI)

    Laurich, B.K.; Smith, D.C.; Healy, M.D.

    1994-06-01T23:59:59.000Z

    We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.

  1. Please cite as: Boynton, W.R. 1998. Chesapeake Bay eutrophication Current status, historical trends, nutrient limitation

    E-Print Network [OSTI]

    Boynton, Walter R.

    Please cite as: Boynton, W.R. 1998. Chesapeake Bay eutrophication Current status, historical trends NUTRIENTS WORKSHOP CHESAPEAKE BAY EUTROPHICATION: CURRENT STATUS, HISTORICAL TRENDS, NUTRIENT LIMITATION summarizes a portion of the eutrophication history of Chesapeake Bay, a large coastal plain estuary

  2. Environmental links to interannual variability in shellfish toxicity in Cobscook Bay and eastern Maine, a strongly tidally mixed coastal region

    E-Print Network [OSTI]

    Townsend, David W.

    Environmental links to interannual variability in shellfish toxicity in Cobscook Bay and eastern e i n f o Keywords: Harmful algal blooms Gulf of Maine Cobscook Bay Shellfish toxicity a b s t r a c of Cobscook Bay, where strong tidal mixing tends to reduce seasonal variability in oceanographic properties

  3. The muon system of the Daya Bay Reactor antineutrino experiment

    E-Print Network [OSTI]

    Daya Bay Collaboration

    2014-11-28T23:59:59.000Z

    The Daya Bay experiment consists of functionally identical antineutrino detectors immersed in pools of ultrapure water in three well-separated underground experimental halls near two nuclear reactor complexes. These pools serve both as shields against natural, low-energy radiation, and as water Cherenkov detectors that efficiently detect cosmic muons using arrays of photomultiplier tubes. Each pool is covered by a plane of resistive plate chambers as an additional means of detecting muons. Design, construction, operation, and performance of these muon detectors are described.

  4. On the circulation and tidal flushing of Mobile Bay, Alabama

    E-Print Network [OSTI]

    Austin, George Belden

    1953-01-01T23:59:59.000Z

    is not filling with sediment to any apparent degree. The U. S. Corps of Engineers maintains ths Mobile Ship Channel to a depth of thirty-two feet. Dredging operations proceed during most of the year since this depth is some twenty-two f'eet below the mean bay... ~ ~ ~ ~ ix ~ ~ ~ ~ ~ ~ ~ ~ ~ 1 ~ 4 6 9 10 E. Meteorological III. TIDAL FLUSHING THEORY 15 A. Ketchum's Tidal Prism Theory B. Stommel's and Arons' Ydxing Length Theory. of Tidal Flushing IV. THE HYDROGRAPHIC SURVEY 22 27 A. Planning B...

  5. Observations of remote and local forcing in Galveston Bay, Texas

    E-Print Network [OSTI]

    Guannel, Gregory

    2001-01-01T23:59:59.000Z

    OIISERVATIONS OF REMOTE AND LOCAL FORCINC IN CALVESTON BAY, TEXAS A Thesis by GREGORY GUANNEL Submitted to the Office ot Graduate Studies of Texas ARM University in partial fulfillment of the requirements for the degree of MASTER OF SCIENCE... conditions, and who supported me and helped me in the theoret&cal aspect of my research, as well as in thc professional aspect of my studies at Texas A&M University. I also would like to thank Dr. Edge for his help and support, and Dr. Nev, ton liar its...

  6. Geological oceanography of the Atchafalaya Bay area, Louisiana

    E-Print Network [OSTI]

    Thompson, Warren Charles

    1953-01-01T23:59:59.000Z

    off the river mouth, and 2. Mud-flat sediments on the coast west of Atchafalaya Bay to form the 7-mile-wide stretch of marshland which extends for 60 miles (Figure 3, p. 14). B. The contemporary rapid increase in discharge of the Atchafalaya River... area of the recently formed Atchafalaya River, and the site at which a great new river delta will eventually form. Engineering operations undertaken near the head of the Atchafalaya River in central Louisiana in the mid-19th century to open a...

  7. Recent Results from Daya Bay Reactor Neutrino Experiment

    E-Print Network [OSTI]

    Hu, Bei-Zhen

    2015-01-01T23:59:59.000Z

    The Daya Bay reactor neutrino experiment announced the discovery of a non-zero value of \\sin^22\\theta_{13} with significance better than 5 \\sigma in 2012. The experiment is continuing to improve the precision of \\sin^22\\theta_{13} and explore other physics topics. In this talk, I will show the current oscillation and mass-squared difference results which are based on the combined analysis of the measured rates and energy spectra of antineutrino events, an independent measurement of \\theta_{13} using IBD events where delayed neutrons are captured on hydrogens, and a search for light sterile neutrinos.

  8. The Muon System of the Daya Bay Reactor Antineutrino Experiment

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    An, F. P.; Hackenburg, R. W.; Brown, R. E.; Chasman, C.; Dale, E.; Diwan, M. V.; Gill, R.; Hans, S.; Isvan, Z.; Jaffe, D. E.; Kettell, S. H.; Littenberg, L.; Pearson, C. E.; Qian, X.; Theman, H.; Viren, B.; Worcester, E.; Yeh, M.; Zhang, C.

    2015-02-01T23:59:59.000Z

    The Daya Bay experiment consists of functionally identical antineutrino detectors immersed in pools of ultrapure water in three well-separated underground experimental halls near two nuclear reactor complexes. These pools serve both as shields against natural, low-energy radiation, and as water Cherenkov detectors that efficiently detect cosmic muons using arrays of photomultiplier tubes. Each pool is covered by a plane of resistive plate chambers as an additional means of detecting muons. Design, construction, operation, and performance of these muon detectors are described. (auth)

  9. On the circulation and tidal flushing of Mobile Bay, Alabama

    E-Print Network [OSTI]

    Austin, George Belden

    1953-01-01T23:59:59.000Z

    . For each of the twenty-eight station positions, curves vere then drawn for temperature-depth and salinity&epth for the different ob- served tidal stages. From these curves temperature-depth sections (Figure V) and salinity-depth sections (Figures VI, VII...) vere oon- structed 1' or six cross-sections of Mobile Bay and for the ship channel length, for the different tidal stages. Current velocity vectors were plotted by station for surface and bottom at ebb and flood tidal stages. From these data surface...

  10. Bristol Bay Borough, Alaska: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  11. Clean Cities: East Bay Clean Cities coalition (Oakland)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office511041clothAdvanced Materials Advanced. C o w l i t z CPlasma0 12Denver Metro Clean Cities CoalitionBay

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to: navigation, searchOfRose BendMiasole IncMinutemanVistaZephyr) JumpMorro Bay, California:

  17. Pedro Bay Village Council (Utility Company) | Open Energy Information

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  19. McKay Bay Facility Biomass Facility | Open Energy Information

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  1. Cutler Bay, Florida: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

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  2. Cold Bay Hot Spring Geothermal Area | Open Energy Information

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  3. Nassau Bay, Texas: Energy Resources | Open Energy Information

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  8. Bay Hill, Florida: Energy Resources | Open Energy Information

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  15. Galveston Bay Biodiesel LP GBB | Open Energy Information

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  16. UID-GaN doping1016 cm-3 2 m 5 m2 m

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    2 m Drain Silicon UID-GaN doping1016 cm-3 1.1 m 2 m GateSource 2 m 5 m2 m AirAir Al0.25GaN doping1015 cm-3 30 nm Drain Silicon UID-GaN P-GaNSource AirAir AlxGaN Drain Silicon UID-GaN GateSource AirAir AlxGaN Gate (a) (b) (c) Drain Silicon UID-GaN P-GaNSource AirAir AlxGaN Gate (d) P-GaN P-GaN 30

  17. Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers

    SciTech Connect (OSTI)

    Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

    2013-05-28T23:59:59.000Z

    Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

  18. Epitaxial GaN films by hyperthermal ion-beam nitridation of Ga droplets

    SciTech Connect (OSTI)

    Gerlach, J. W.; Ivanov, T.; Neumann, L.; Hoeche, Th.; Hirsch, D.; Rauschenbach, B. [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), D-04318 Leipzig (Germany)

    2012-06-01T23:59:59.000Z

    Epitaxial GaN film formation on bare 6H-SiC(0001) substrates via the process of transformation of Ga droplets into a thin GaN film by applying hyperthermal nitrogen ions is investigated. Pre-deposited Ga atoms in well defined amounts form large droplets on the substrate surface which are subsequently nitridated at a substrate temperature of 630 Degree-Sign C by a low-energy nitrogen ion beam from a constricted glow-discharge ion source. The Ga deposition and ion-beam nitridation process steps are monitored in situ by reflection high-energy electron diffraction. Ex situ characterization by x-ray diffraction and reflectivity techniques, Rutherford backscattering spectrometry, and electron microscopy shows that the thickness of the resulting GaN films depends on the various amounts of pre-deposited gallium. The films are epitaxial to the substrate, exhibit a mosaic like, smooth surface topography and consist of coalesced large domains of low defect density. Possible transport mechanisms of reactive nitrogen species during hyperthermal nitridation are discussed and the formation of GaN films by an ion-beam assisted process is explained.

  19. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  20. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

    1998-01-01T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  1. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09T23:59:59.000Z

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  2. High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

    SciTech Connect (OSTI)

    Koblmueller, G. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Walter Schottky Institut, Technische Universitaet Muenchen, D-85748 Garching (Germany); Chu, R. M.; Raman, A.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Speck, J. S. [Department of Materials, University of California, Santa Barbara, California 93106 (United States)

    2010-02-15T23:59:59.000Z

    We present combined in situ thermal cleaning and intentional doping strategies near the substrate regrowth interface to produce high-quality AlGaN/GaN high electron mobility transistors on semi-insulating (0001) GaN templates with low interfacial impurity concentrations and low buffer leakage. By exposing the GaN templates to an optimized thermal dissociation step in the plasma-assisted molecular beam epitaxy environment, oxygen, carbon, and, to lesser extent, Si impurities were effectively removed from the regrowth interface under preservation of good interface quality. Residual Si was further compensated by C-doped GaN via CBr{sub 4} to yield highly resistive GaN buffer layers. Improved N-rich growth conditions at high growth temperatures were then utilized for subsequent growth of the AlGaN/GaN device structure, yielding smooth surface morphologies and low residual oxygen concentration with large insensitivity to the (Al+Ga)N flux ratio. Room temperature electron mobilities of the two-dimensional electron gas at the AlGaN/GaN interface exceeded >1750 cm{sup 2}/V s and the dc drain current reached {approx}1.1 A/mm at a +1 V bias, demonstrating the effectiveness of the applied methods.

  3. Evaluation of older bay mud sediment from Richmond Harbor, California

    SciTech Connect (OSTI)

    Pinza, M.R.; Mayhew, H.L.; Word, J.Q.

    1996-09-01T23:59:59.000Z

    The older, bay mud (OBM) unit predates modem man and could act as a barrier to the downward transport of contaminants from the younger bay mud (YBM) because of its hard-packed consistency. However, its chemical and biological nature have not been well characterized. Battelle/Marine Sciences Laboratory (MSL) conducted three independent studies of OBM sediment in January 1993, January 1994, and October 1994. These studies evaluated potential chemical contamination and biological effects of OBM that could occur as a result of dredging and disposal activities. These evaluations were performed by conducting chemical analysis, solid-phase toxicity tests, suspended- particulate-phase (SPP) toxicity tests, and bioaccumulation tests on the OBM sediment. If the sediment chemistry and toxicity results showed no or minimal contamination and toxicological responses, then either the OBM could be left exposed in Richmond Harbor after dredging the YBM without leaving a source of contamination, or if the project depths necessitate, the OBM would be acceptable for disposal at an appropriate disposal site.

  4. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01T23:59:59.000Z

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  5. PHYSICAL REVIEW B 85, 045319 (2012) Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities

    E-Print Network [OSTI]

    Vuckovic, Jelena

    2012-01-01T23:59:59.000Z

    in materials systems, including InP/InGaP,69 InP/GaP,10,11 InP/AlGaInP,12,13 GaInP/GaP,14 InAs/GaP,15 and Al have been observed only in the InP/InGaP and InP/AlGaInP systems. GaP-based materials, by contrastP compared to InGaP is preferable for on-chip frequency downconversion to telecom wavelengths. Recently,17

  6. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States); Yarrison-Rice, Jan [Department of Physics, Miami University, Oxford, OH 45056 (United States); Gao, Qiang; Tan, Hoe; Jagadish, Chennupati [Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Etheridge, Joanne [Monash Centre for Electron Microscopy, Monash University, Victoria, 3800 (Australia); Wong, Bryan M. [Materials Chemistry Department, Sandia National Laboratories, Livermore, CA 94551 (United States)

    2013-12-04T23:59:59.000Z

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  7. Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

    SciTech Connect (OSTI)

    Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Universit Europenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Cosmes, 35708 Rennes (France)] [Universit Europenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Cosmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)] [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Fsica, Universidade Federal do Cear, P.O. Box 6030, FortalezaCE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain)] [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Llus Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Universit de Rennes 1, F-35042 Rennes Cedex (France)] [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Universit de Rennes 1, F-35042 Rennes Cedex (France)

    2014-01-06T23:59:59.000Z

    The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

  8. Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates

    SciTech Connect (OSTI)

    Kandaswamy, P. K.; Monroy, E. [CEA/CNRS group 'Nanophysique et semiconducteurs', INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Machhadani, H.; Sakr, S.; Tchernycheva, M.; Julien, F. H. [Photis, Institut d'Electronique Fondamentale, Universite Paris-Sud, 91405 Orsay Cedex (France); Bougerol, C. [CEA/CNRS group 'Nanophysique et semiconducteurs', Institut Neel, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)

    2009-10-05T23:59:59.000Z

    We report on the observation of midinfrared intersubband absorption in Si-doped GaN/AlGaN superlattices grown by plasma-assisted molecular-beam epitaxy on semi-insulating GaN-on-Si(111) templates. TM-polarized absorption attributed to transition between the first two electronic levels in the quantum wells peaked in the range from 2 to 9 {mu}m. The relative spectral width remains around 20% in the whole midinfrared spectral range. Doping is predicted to have a large influence on the intersubband absorption energy due to screening of polarization-induced internal electric field.

  9. User's guide for BAYES: a general-purpose computer code for fitting a functional form to experimental data

    SciTech Connect (OSTI)

    Larson, N M

    1982-08-01T23:59:59.000Z

    This report is intended as a user's manual for a general-purpose computer program BAYES to solve Bayes equations for updating parameter values, uncertainties, and correlations. Bayes equations are derived from Bayes theorem, using linearity and normality assumptions. The method of solution is described, and details are given for adapting the code for a specific purpose. Numerous examples are given, including problem description and solution method, FORTRAN coding, and sample input and output. A companion code LEAST, which solves the usual least-squares equations rather than Bayes equations but which encourages nondiagonal data weighting, is also described.

  10. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01T23:59:59.000Z

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  11. Degradation mechanisms of GaN high electron mobility transistors

    E-Print Network [OSTI]

    Joh, Jungwoo

    2007-01-01T23:59:59.000Z

    In spite of their extraordinary performance, GaN high electron mobility transistors (HEMT) have still limited reliability. In RF power applications, GaN HEMTs operate at high voltage where good reliability is essential. ...

  12. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgl Okur [Department of Statistics, Giresun University, Giresun (Turkey); Akdemir, Hande Gnay; ??can, ?mdat [Department of Mathematics, Giresun University, Giresun (Turkey)

    2014-08-20T23:59:59.000Z

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  13. TEM-Untersuchungen an GaN basierten Halbleiterheterostrukturen fur

    E-Print Network [OSTI]

    Schubart, Christoph

    TEM-Untersuchungen an GaN basierten Halbleiterheterostrukturen fur optoelektronische Anwendungen . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 5.1.2 Versetzungen bei Homoapitaxie auf GaN-Substraten . . . . 79 5.2 Versetzungsreduktion durch

  14. GaN Nanopore Arrays: Fabrication and Characterization

    E-Print Network [OSTI]

    Wang, Yadong

    GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...

  15. Commencement Bay cumulative impact study: Historic review of special aquatic sites

    SciTech Connect (OSTI)

    Not Available

    1991-05-04T23:59:59.000Z

    The Commencement Bay Nearshore/Tideflats area, of which Commencement Bay is a part, has been designated by the Environmental Protection Agency as a Superfund site. Development in and around Commencement Bay have resulted in significant shoreline alterations, loss of substantial aquatic, mudflat and delta wetland habitat, and degradation of water quality. Dredging of nearshore areas to support port and harbor facilities for the Port of Tacoma has been carried out since the turn of the century by public and private industry. Areas south of the waterways have been diked, filled, and channelized for construction of storage buildings, shipping facilities, and various commercial and industrial purposes. Continued development pressures, maintenance dredging, and other activities necessitate an evaluation of the cumulative impacts of such activities on the remaining aquatic sites of Commencement Bay. Various resource agency and tribal recommendations resulted in the Commencement Bay Cumulative Impact Study, which was designed to produce the most complete historic record documenting loss of special aquatic sites. The baseline information will be used to quantify the cumulative impacts beginning in the mid-1800's through 1941 as a management tool. Commencement Bay is generally defined as a geographic region of south Puget Sound in Washington State extending from Brown's Point to Point Defiance. It provides a natural harbor for ships because there are no bars or other obstructions at the entrance to the bay.

  16. Height stabilization of GaSb/GaAs quantum dots by Al-rich capping

    SciTech Connect (OSTI)

    Smakman, E. P., E-mail: e.p.smakman@tue.nl; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands); DeJarld, M.; Martin, A. J.; Millunchick, J. [Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Luengo-Kovac, M.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2014-09-01T23:59:59.000Z

    GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

  17. 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly ...

  18. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A. [Institute of Physics, NASU, Pr. Nauki 46, Kiev 03028 (Ukraine); Belyaev, A. E. [Institute of Semiconductor Physics, NASU, Pr. Nauki 45, Kiev 03028 (Ukraine); Vitusevich, S. A., E-mail: s.vitusevich@fz-juelich.de; Hardtdegen, H.; Lth, H. [Peter Grnberg Institute (PGI-8,PGI-9), Forschungszentrum Jlich, Jlich D-52425 (Germany)

    2014-02-17T23:59:59.000Z

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  19. AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications

    E-Print Network [OSTI]

    Seo, Kwang Seok

    AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching 16, 2004; accepted May 10, 2005; published September 8, 2005) We have proposed and fabricated an AlGaN/GaN: GaN, AlGaN, HEMT, switch 1. Introduction GaN has attracted attention for high-power and high

  20. Cubic AlGaN/GaN Hetero-Junction Field-Effect Transistors with Normally-on and Normally-off

    E-Print Network [OSTI]

    As, Donat Josef

    Cubic AlGaN/GaN Hetero-Junction Field-Effect Transistors with Normally-on and Normally-effect transistors (HFETs) in GaN technology. HFET structures were fabricated of non-polar cubic AlGaN/GaN hetero insulation of 3C-SiC was realized by Ar+ implantation before c-AlGaN/GaN growth. HFETs with normally

  1. A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    WE4A-5 A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs Jane J a GaN-based broadband power amplifier using AlGaN/GaN-HEMTs, grown on sapphire substrates amplifier using GaN- HEMTs-on-Sapphire. I INTRODUCTION GaN HEMTs have enormous potential for realizing high

  2. IPAP Conference Series 1: IWN2000, Nov., 2000 1 Morphology Dependent Growth Kinetics of Ga-polar GaN(0001)

    E-Print Network [OSTI]

    Cohen, Philip I.

    IPAP Conference Series 1: IWN2000, Nov., 2000 1 Morphology Dependent Growth Kinetics of Ga-polar GaN, cohen@ece.umn.edu GaN grown on Ga polar GaN templates prepared by metal-organic vapor deposition shows to equilibrium models of the growth. The results indicate that Ga-polar GaN(0001) has a step energy of the order

  3. Engineering of AlGaN-Delta-GaN Quantum-Well Gain Media for Mid-and Deep-Ultraviolet Lasers

    E-Print Network [OSTI]

    Gilchrist, James F.

    Engineering of AlGaN-Delta-GaN Quantum-Well Gain Media for Mid- and Deep-Ultraviolet Lasers Volume.1109/JPHOT.2013.2248705 1943-0655/$31.00 2013 IEEE #12;Engineering of AlGaN-Delta-GaN Quantum-Well Gain@Lehigh.Edu). Abstract: The gain characteristics of AlGaN-delta-GaN quantum wells (QWs) with varying delta-GaN positions

  4. Recent progress in InGaAsSb/GaSb TPV devices

    SciTech Connect (OSTI)

    Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

    1996-05-01T23:59:59.000Z

    AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

  5. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

    2014-09-26T23:59:59.000Z

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  6. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Haj?asz, M., E-mail: m.hajlasz@m2i.nl [Materials innovation institute (M2i), Mekelweg 2, 2628 CD, Delft (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); Gravesteijn, D. J. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Rietveld, F. J. R. [NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen (Netherlands); Schmitz, J. [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)

    2014-06-16T23:59:59.000Z

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  7. TEM and HRXRD Analysis of LP MOVPE Grown InGaP/GaAs epilayers

    SciTech Connect (OSTI)

    Pelosi, Claudio; Bosi, Matteo; Attolini, Giovanni; Germini, Fabrizio; Frigeri, Cesare [CNR-IMEM Institute, Parco Area delle Scienze 37a, Loc Fontanini 43010 Parma (Italy); Prutskij, Tatiana [Instituto de Ciencias, BUAP, Privada 17 Norte, no. 3417, colSanMiguel Hueyotlipan, 72050 Puebla, Pue. (Mexico)

    2007-04-10T23:59:59.000Z

    The diffusion phenomena at interfaces between GaAs/InGaP layers grown by low pressure MOVPE have been studied by dark field (DF) transmission Electron Microscopy (TEM) and High resolution X-ray Diffractometry (HRXRD). By comparing the results of the two techniques a mismatched layer containing P or P and In has been evidenced. The causes of this behavior are briefly discussed.

  8. Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes

    E-Print Network [OSTI]

    Cornelius S. Bausch; Aune Koitme; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

    2013-05-06T23:59:59.000Z

    We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

  9. InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening

    SciTech Connect (OSTI)

    Glauser, Marlene; Mounir, Christian; Rossbach, Georg; Feltin, Eric; Carlin, Jean-Franois; Butt, Raphal; Grandjean, Nicolas [cole Polytechnique Fdrale de Lausanne (EPFL), Institute of Condensed Matter Physics, CH-1015 Lausanne (Switzerland)

    2014-06-21T23:59:59.000Z

    Contrary to the case of III-nitride based visible light-emitting diodes for which the inhomogeneous linewidth broadening characteristic of InGaN-based multiple quantum well (MQW) heterostructures does not appear as a detrimental parameter, such a broadening issue can prevent a microcavity (MC) system entering into the strong light-matter coupling regime (SCR). The impact of excitonic disorder in low indium content (x???0.1) In{sub x}Ga{sub 1x}N/GaN MQW active regions is therefore investigated for the subsequent realization of polariton laser diodes by considering both simulations and optical characterizations. It allows deriving the requirements for such MQWs in terms of absorption, emission linewidth, and Stokes shift. Systematic absorption-like and photoluminescence (PL) spectroscopy experiments are performed on single and multiple In{sub 0.1}Ga{sub 0.9}N/GaN quantum wells (QWs). Micro-PL mappings reveal a low temperature PL linewidth of ?30?meV, compatible with SCR requirements, for single QWs for which the microscopic origin responsible for this broadening is qualitatively discussed. When stacking several InGaN/GaN QWs, a departure from such a narrow linewidth value and an increase in the Stokes shift are observed. Various possible reasons for this degradation such as inhomogeneous built-in field distribution among the QWs are then identified. An alternative solution for the MC design to achieve the SCR with the InGaN alloy is briefly discussed.

  10. Rapid Communications Strong piezoelectricity in individual GaN nanowires

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    Rapid Communications Strong piezoelectricity in individual GaN nanowires Majid Minary@northwestern.edu (Received 12 July 2011; accepted 15 September 2011) Abstract GaN nanowires are promising building blocks piezoelectricity in individual single-crystal GaN nanowires revealed by direct measurement of the piezoelectric

  11. GaN Radiation Detectors for Particle Physics and

    E-Print Network [OSTI]

    Glasgow, University of

    GaN Radiation Detectors for Particle Physics and Synchrotron Applications James Paul Grant and monitoring applications. Gallium nitride (GaN) was investigated as a radiation hard particle detector diameter on three epitaxial GaN wafers grown on a sapphire sub- strate. Two of the wafers were obtained

  12. New Faces of GaN: Growth, Doping and Devices

    E-Print Network [OSTI]

    California at Santa Barbara, University of

    New Faces of GaN: Growth, Doping and Devices James S. Speck Materials Department University of California Santa Barbara, CA LEO of a-GaN from circular opening Engineering Insights 2006 #12;#12;Personnel. Wraback (ARL) $$$ JST ERATO UCSB SSLDC AFOSR ONR #12;Reversed direction of polarization Bulk GaN

  13. Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

    SciTech Connect (OSTI)

    Perez-Tomas, A.; Fontsere, A.; Llobet, J. [IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, CAT (Spain); Placidi, M. [IREC, Jardins Dones de Negre 1, 08930 Sant Adria de Besos, Barcelona (Spain); Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Baron, N. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); PICOGIGA International, Pl M. Rebuffat, Courtaboeuf 7, 91140 Villejust (France)

    2013-05-07T23:59:59.000Z

    The vertical bulk (drain-bulk) current (I{sub db}) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I{sub db} (25-300 Degree-Sign C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E{sub a}), the (soft or destructive) vertical breakdown voltage (V{sub B}), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E{sub a} = 0.35 eV at T = 25-300 Degree-Sign C; V{sub B} = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E{sub a} = 2.5 eV at T > 265 Degree-Sign C; V{sub B} > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E{sub a} = 0.35 eV at T > 150 Degree-Sign C; V{sub B} = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

  14. A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+

    E-Print Network [OSTI]

    McKittrick, Joanna

    A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

  15. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

    E-Print Network [OSTI]

    improve the room-temperature carrier mobility in wurtzite AlN/GaN/AlN heterostructures, which is limited consider a narrow groove made of InxGa1-xN with small In content x inside a wurtzite AlN/GaN/AlN heteroN 2 nm /GaN 3 nm /AlN 3 nm . A well-known feature of wurtzite heterostructures is a strong buit

  16. Growth of GaN on porous SiC and GaN substrates C. K. Inoki1

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Growth of GaN on porous SiC and GaN substrates C. K. Inoki1 , T. S. Kuan1 , Ashutosh Sagar2 , C, Albuquerque, NM 87185 4 Beckman Institute, University of Illinois, Urbana, IL 61801 GaN films were grown on porous SiC and GaN templates using both plasma-assisted molecular beam epitaxy (PAMBE) and metal

  17. Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer

    E-Print Network [OSTI]

    Ozbay, Ekmel

    N buffer layer BL grown on an Al2O3 substrate and an AlN IL grown under the AlGaN ternary layer TL. In the present study, we investigate the effects of an AlN BL on an Al2O3 substrate and an AlN IL between an AlGaNStructural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer

  18. Development of a Hydrodynamic and Transport model of Bellingham Bay in Support of Nearshore Habitat Restoration

    SciTech Connect (OSTI)

    Wang, Taiping; Yang, Zhaoqing; Khangaonkar, Tarang

    2010-04-22T23:59:59.000Z

    In this study, a hydrodynamic model based on the unstructured-grid finite volume coastal ocean model (FVCOM) was developed for Bellingham Bay, Washington. The model simulates water surface elevation, velocity, temperature, and salinity in a three-dimensional domain that covers the entire Bellingham Bay and adjacent water bodies, including Lummi Bay, Samish Bay, Padilla Bay, and Rosario Strait. The model was developed using Pacific Northwest National Laboratorys high-resolution Puget Sound and Northwest Straits circulation and transport model. A sub-model grid for Bellingham Bay and adjacent coastal waters was extracted from the Puget Sound model and refined in Bellingham Bay using bathymetric light detection and ranging (LIDAR) and river channel cross-section data. The model uses tides, river inflows, and meteorological inputs to predict water surface elevations, currents, salinity, and temperature. A tidal open boundary condition was specified using standard National Oceanic and Atmospheric Administration (NOAA) predictions. Temperature and salinity open boundary conditions were specified based on observed data. Meteorological forcing (wind, solar radiation, and net surface heat flux) was obtained from NOAA real observations and National Center for Environmental Prediction North American Regional Analysis outputs. The model was run in parallel with 48 cores using a time step of 2.5 seconds. It took 18 hours of cpu time to complete 26 days of simulation. The model was calibrated with oceanographic field data for the period of 6/1/2009 to 6/26/2009. These data were collected specifically for the purpose of model development and calibration. They include time series of water-surface elevation, currents, temperature, and salinity as well as temperature and salinity profiles during instrument deployment and retrieval. Comparisons between model predictions and field observations show an overall reasonable agreement in both temporal and spatial scales. Comparisons of root mean square error values for surface elevation, velocity, temperature, and salinity time series are 0.11 m, 0.10 m/s, 1.28oC, and 1.91 ppt, respectively. The model was able to reproduce the salinity and temperature stratifications inside Bellingham Bay. Wetting and drying processes in tidal flats in Bellingham Bay, Samish Bay, and Padilla Bay were also successfully simulated. Both model results and observed data indicated that water surface elevations inside Bellingham Bay are highly correlated to tides. Circulation inside the bay is weak and complex and is affected by various forcing mechanisms, including tides, winds, freshwater inflows, and other local forcing factors. The Bellingham Bay model solution was successfully linked to the NOAA oil spill trajectory simulation model General NOAA Operational Modeling Environment (GNOME). Overall, the Bellingham Bay model has been calibrated reasonably well and can be used to provide detailed hydrodynamic information in the bay and adjacent water bodies. While there is room for further improvement with more available data, the calibrated hydrodynamic model provides useful hydrodynamic information in Bellingham Bay and can be used to support sediment transport and water quality modeling as well as assist in the design of nearshore restoration scenarios.

  19. From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

    SciTech Connect (OSTI)

    Fisichella, G. [CNR-IMM, Strada VIII, 5, 95121 Catania (Italy); Department of Electronic Engineering, University of Catania, 95124 Catania (Italy); Greco, G.; Roccaforte, F.; Giannazzo, F. [CNR-IMM, Strada VIII, 5, 95121 Catania (Italy)

    2014-08-11T23:59:59.000Z

    The electrical behaviour of graphene (Gr) contacts to Al{sub x}Ga{sub 1?x}N/GaN heterostructures has been investigated, focusing, in particular, on the impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface. Two Al{sub 0.25}Ga{sub 0.75}N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, as evaluated by atomic force microscopy (AFM) and transmission electron microscopy, were compared in this study, i.e., a uniform and defect-free sample and a sample with a high density of typical V-defects, which locally cause a reduction of the AlGaN thickness. Nanoscale resolution current voltage (I-V) measurements by an Au coated conductive AFM tip were carried out at several positions both on the bare and Gr-coated AlGaN surfaces. Rectifying contacts were found onto both bare AlGaN surfaces, but with a more inhomogeneous and lower Schottky barrier height (?{sub B}???0.6?eV) for AlGaN with V-defects, with respect to the case of the uniform AlGaN (?{sub B}???0.9?eV). Instead, very different electrical behaviours were observed in the presence of the Gr interlayer between the Au tip and AlGaN, i.e., a Schottky contact with reduced barrier height (?{sub B} ? 0.4?eV) for the uniform AlGaN and an Ohmic contact for the AlGaN with V-defects. Interestingly, excellent lateral uniformity of the local I-V characteristics was found in both cases and can be ascribed to an averaging effect of the Gr electrode over the AlGaN interfacial inhomogeneities. Due to the locally reduced AlGaN layer thickness, V defect act as preferential current paths from Gr to the 2DEG and can account for the peculiar Ohmic behaviour of Gr contacts on defective AlGaN.

  20. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01T23:59:59.000Z

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  1. X-ray diffraction analysis of InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition

    SciTech Connect (OSTI)

    Nittono, T.; Hyuga, F. [NTT System Electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01 (Japan)] [NTT System Electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01 (Japan)

    1997-03-01T23:59:59.000Z

    InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition have been characterized by a high-resolution x-ray diffraction analysis of multiple quantum well structures. The flow of AsH{sub 3} to InGaP surface produces an InGaAs-like interfacial layer at the GaAs-on-InGaP interface, indicating P atoms of the InGaP surface are easily replaced by As atoms. The flow of PH{sub 3} to GaAs surface, on the other hand, does not make any detectable interfacial layer, indicating that almost no As atoms of the GaAs surface are replaced by P atoms. It is also found that the flow of trimethylgallium (TMG) to the InGaP surface produces a GaP-like interfacial layer. This interfacial layer is probably formed by the reaction between TMG and excessive P atoms on the InGaP surface or residual PH{sub 3} in the growth chamber. {copyright} {ital 1997 American Institute of Physics.}

  2. Physica B 376377 (2006) 486490 Preferential substitution of Fe on physically equivalent Ga sites in GaN

    E-Print Network [OSTI]

    Nabben, Reinhard

    2006-01-01T23:59:59.000Z

    in GaN W. Gehlhoff, D. Azamat1 , U. Haboeck, A. Hoffmann Institute for Solid State Physics, Technical freestanding hydride vapor phase grown GaN have been studied in the X- and Q-band. A complex resonance pattern with C3v symmetry in the wurtzite structure of GaN. Aside from the displacement of their magnetic axis

  3. Superluminescence in Green Emission GaInN/GaN Quantum Well Structures under Pulsed Laser Excitation

    E-Print Network [OSTI]

    Wetzel, Christian M.

    and bulk GaN substrates, respectively. Under intense pulsed photo excitation, we observed strong the same excitation conditions, the blue shift for the m-axis grown structure on bulk GaN substrate is less-plane sapphire substrate and along the non-polar m-axis on m-plane bulk GaN substrate. The frequently used

  4. Search for a Light Sterile Neutrino at Daya Bay

    E-Print Network [OSTI]

    F. P. An; A. B. Balantekin; H. R. Band; W. Beriguete; M. Bishai; S. Blyth; I. Butorov; G. F. Cao; J. Cao; Y. L. Chan; J. F. Chang; L. C. Chang; Y. Chang; C. Chasman; H. Chen; Q. Y. Chen; S. M. Chen; X. Chen; X. Chen; Y. X. Chen; Y. Chen; Y. P. Cheng; J. J. Cherwinka; M. C. Chu; J. P. Cummings; J. de Arcos; Z. Y. Deng; Y. Y. Ding; M. V. Diwan; E. Draeger; X. F. Du; D. A. Dwyer; W. R. Edwards; S. R. Ely; J. Y. Fu; L. Q. Ge; R. Gill; M. Gonchar; G. H. Gong; H. Gong; M. Grassi; W. Q. Gu; M. Y. Guan; X. H. Guo; R. W. Hackenburg; G. H. Han; S. Hans; M. He; K. M. Heeger; Y. K. Heng; P. Hinrichs; Y. K. Hor; Y. B. Hsiung; B. Z. Hu; L. M. Hu; L. J. Hu; T. Hu; W. Hu; E. C. Huang; H. Huang; X. T. Huang; P. Huber; G. Hussain; Z. Isvan; D. E. Jaffe; P. Jaffke; K. L. Jen; S. Jetter; X. P. Ji; X. L. Ji; H. J. Jiang; J. B. Jiao; R. A. Johnson; L. Kang; S. H. Kettell; M. Kramer; K. K. Kwan; M. W. Kwok; T. Kwok; W. C. Lai; K. Lau; L. Lebanowski; J. Lee; R. T. Lei; R. Leitner; A. Leung; J. K. C. Leung; C. A. Lewis; D. J. Li; F. Li; G. S. Li; Q. J. Li; W. D. Li; X. N. Li; X. Q. Li; Y. F. Li; Z. B. Li; H. Liang; C. J. Lin; G. L. Lin; P. Y. Lin; S. K. Lin; Y. C. Lin; J. J. Ling; J. M. Link; L. Littenberg; B. R. Littlejohn; D. W. Liu; H. Liu; J. L. Liu; J. C. Liu; S. S. Liu; Y. B. Liu; C. Lu; H. Q. Lu; K. B. Luk; Q. M. Ma; X. Y. Ma; X. B. Ma; Y. Q. Ma; K. T. McDonald; M. C. McFarlane; R. D. McKeown; Y. Meng; I. Mitchell; J. Monari Kebwaro; Y. Nakajima; J. Napolitano; D. Naumov; E. Naumova; I. Nemchenok; H. Y. Ngai; Z. Ning; J. P. Ochoa-Ricoux; A. Olshevski; S. Patton; V. Pec; J. C. Peng; L. E. Piilonen; L. Pinsky; C. S. J. Pun; F. Z. Qi; M. Qi; X. Qian; N. Raper; B. Ren; J. Ren; R. Rosero; B. Roskovec; X. C. Ruan; B. B. Shao; H. Steiner; G. X. Sun; J. L. Sun; Y. H. Tam; X. Tang; H. Themann; K. V. Tsang; R. H. M. Tsang; C. E. Tull; Y. C. Tung; B. Viren; V. Vorobel; C. H. Wang; L. S. Wang; L. Y. Wang; M. Wang; N. Y. Wang; R. G. Wang; W. Wang; W. W. Wang; X. Wang; Y. F. Wang; Z. Wang; Z. Wang; Z. M. Wang; D. M. Webber; H. Y. Wei; Y. D. Wei; L. J. Wen; K. Whisnant; C. G. White; L. Whitehead; T. Wise; H. L. H. Wong; S. C. F. Wong; E. Worcester; Q. Wu; D. M. Xia; J. K. Xia; X. Xia; Z. Z. Xing; J. Y. Xu; J. L. Xu; J. Xu; Y. Xu; T. Xue; J. Yan; C. C. Yang; L. Yang; M. S. Yang; M. T. Yang; M. Ye; M. Yeh; Y. S. Yeh; B. L. Young; G. Y. Yu; J. Y. Yu; Z. Y. Yu; S. L. Zang; B. Zeng; L. Zhan; C. Zhang; F. H. Zhang; J. W. Zhang; Q. M. Zhang; Q. Zhang; S. H. Zhang; Y. C. Zhang; Y. M. Zhang; Y. H. Zhang; Y. X. Zhang; Z. J. Zhang; Z. Y. Zhang; Z. P. Zhang; J. Zhao; Q. W. Zhao; Y. Zhao; Y. B. Zhao; L. Zheng; W. L. Zhong; L. Zhou; Z. Y. Zhou; H. L. Zhuang; J. H. Zou

    2014-10-08T23:59:59.000Z

    A search for light sterile neutrino mixing was performed with the first 217 days of data from the Daya Bay Reactor Antineutrino Experiment. The experiment's unique configuration of multiple baselines from six 2.9~GW$_{\\rm th}$ nuclear reactors to six antineutrino detectors deployed in two near (effective baselines 512~m and 561~m) and one far (1579~m) underground experimental halls makes it possible to test for oscillations to a fourth (sterile) neutrino in the $10^{\\rm -3}~{\\rm eV}^{2} < |\\Delta m_{41}^{2}| < 0.3~{\\rm eV}^{2}$ range. The relative spectral distortion due to electron antineutrino disappearance was found to be consistent with that of the three-flavor oscillation model. The derived limits on $\\sin^22\\theta_{14}$ cover the $10^{-3}~{\\rm eV}^{2} \\lesssim |\\Delta m^{2}_{41}| \\lesssim 0.1~{\\rm eV}^{2}$ region, which was largely unexplored.

  5. Mercury-contaminated sludge treatment by dredging in Minamata Bay

    SciTech Connect (OSTI)

    Yoshinaga, Kiyoto [Ministry of Transport, Niigata (Japan)

    1995-12-31T23:59:59.000Z

    To eradicate Minamata Disease, caused by the discharge of sewage containing methyl mercury and its accumulation in fish and shellfish through the food cycle, a large-scale sediment disposal project was conducted with special care taken to prevent new pollution resulting from the project itself. The basic approach to sediment disposal was to construct a highly watertight revetment to reclaim the inner area of the bay and then confine sediment dredged from the remaining contaminated area in the reclamation area through surface treatment. Before sediment disposal, boundary nets were installed to enclose the work area to prevent the mixing of contaminated and noncontaminated fish. Dredging work was successfully carried out by using four cutterless suction dredgers, newly developed in advance for minimizing resuspension of sediments. Dredged material was discharged into the reclamation area, filled up to sea level, and covered with a sandproof membrane, lightweight volcanic ash earth, and mountain soil.

  6. Composition and Interface Analysis of InGaN/GaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography

    SciTech Connect (OSTI)

    Liu, Fang; Huang, Li; Davis, Robert F.; Porter, Lisa M.; Schreiber, Daniel K.; Kuchibhatla, S. V. N. T.; Shutthanandan, V.; Thevuthasan, Suntharampillai; Preble, Edward; Paskova, Tanya; Evans, K. R.

    2014-09-04T23:59:59.000Z

    In0.20Ga0.80N/GaN multi-quantum wells grown on [0001]-oriented GaN substrates with and without an InGaN buffer layer were characterized using three-dimensional atom probe tomography. In all samples, the upper interfaces of the QWs were slightly more diffuse than the lower interfaces. The buffer layers did not affect the roughness of the interfaces within the quantum well structure, a result attributed to planarization of the surface of the 1st GaN barrier layer which had an average root-mean-square roughness of 0.177 nm. The In and Ga distributions within the MQWs followed the expected distributions for a random alloy with no indications of In clustering.

  7. Point defect balance in epitaxial GaSb

    SciTech Connect (OSTI)

    Segercrantz, N., E-mail: natalie.segercrantz@aalto.fi; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland); Song, Y.; Wang, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gteborg (Sweden); State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 (China)

    2014-08-25T23:59:59.000Z

    Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the ptype conductivity is caused by different defects in GaSb grown with different methods.

  8. Surface Currents and Winds at the Delaware Bay Mouth

    SciTech Connect (OSTI)

    Muscarella, P A; Barton, N P; Lipphardt, B L; Veron, D E; Wong, K C; Kirwan, A D

    2011-04-06T23:59:59.000Z

    Knowledge of the circulation of estuaries and adjacent shelf waters has relied on hydrographic measurements, moorings, and local wind observations usually removed from the region of interest. Although these observations are certainly sufficient to identify major characteristics, they lack both spatial resolution and temporal coverage. High resolution synoptic observations are required to identify important coastal processes at smaller scales. Long observation periods are needed to properly sample low-frequency processes that may also be important. The introduction of high-frequency (HF) radar measurements and regional wind models for coastal studies is changing this situation. Here we analyze synoptic, high-resolution surface winds and currents in the Delaware Bay mouth over an eight-month period (October 2007 through May 2008). The surface currents were measured by two high-frequency radars while the surface winds were extracted from a data-assimilating regional wind model. To illustrate the utility of these monitoring tools we focus on two 45-day periods which previously were shown to present contrasting pictures of the circulation. One, the low-outflow period is from 1 October through 14 November 2007; the other is the high-outflow period from 3 March through 16 April 2008. The large-scale characteristics noted by previous workers are clearly corroborated. Specifically the M2 tide dominates the surface currents, and the Delaware Bay outflow plume is clearly evident in the low frequency currents. Several new aspects of the surface circulation were also identified. These include a map of the spatial variability of the M2 tide (validating an earlier model study), persistent low-frequency cross-mouth flow, and a rapid response of the surface currents to a changing wind field. However, strong wind episodes did not persist long enough to set up a sustained Ekman response.

  9. Room-temperature cw operation of InGaAsP/InGaP lasers at 727 nm grown on GaAs substrates by liquid phase epitaxy

    SciTech Connect (OSTI)

    Wakao, K.; Nishi, H.; Kusunoki, T.; Isozumi, S.; Ohsaka, S.

    1984-06-01T23:59:59.000Z

    InGaAsP/InGaP lasers emitting at 724--727 nm have been fabricated on GaAs substrates using liquid phase epitaxy. The threshold current is reduced to 8 kA/cm/sup 2/ by thinning the active layer. Room-temperature cw operation is achieved for the first time in the lasing wavelength range below 760 nm in this quaternary system.

  10. Self-assembled In0.5Ga0.5As quantum dots on GaP Yuncheng Song,a

    E-Print Network [OSTI]

    Haller, Gary L.

    SAQDs . Several groups have investigated the growth of both InP and In-rich InGaP SAQDs on GaP.712 Most temperature operation of vis- ible light emitting diodes LEDs using InP/GaP and InGaP/ GaP SAQDs, respectively

  11. Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns

    E-Print Network [OSTI]

    Jahns, Jrgen

    Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J spreading in a mesa-structure GaN-based LED grown on an insulating or semi-insulating substrate. (b. Jahns Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating

  12. Gas-source molecular beam epitaxial growth and characterization of the (Al,In,Ga)NP/GaP material system and Its applications to light-emitting diodes

    E-Print Network [OSTI]

    Odnoblyudov, Vladimir

    2006-01-01T23:59:59.000Z

    ? G, Kcal/mol GaP GaN AlN o Substrate temperature, C Figurenm-thick GaN 0.006 P 0.994 layer on substrate temperature.substrate temperature for Reactions formation of AlP, GaP, GaN and

  13. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 51, NO. 2, FEBRUARY 2003 653 AlGaN/GaN HFET Power Amplifier Integrated With

    E-Print Network [OSTI]

    Itoh, Tatsuo

    the first demonstration of a GaN-based HFET was done on a sapphire substrate in 1993 [1][3]. This is due crystal quality compared to that of the sapphire substrate. Thanks to steadfast progress in AlGaN/GaN HFETIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 51, NO. 2, FEBRUARY 2003 653 AlGaN/GaN

  14. Tunable THz plasmon resonances in InGaAs/InP HEMT R. E. Peale*a

    E-Print Network [OSTI]

    Peale, Robert E.

    , high ns, and small m*. A variety of materials systems such as GaAs/AlGaAs [3], InGaP/InGaAs/GaAs [4

  15. Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    fabricated on freestanding GaN substrates T. Koyama and T.on freestanding m-plane GaN substrates. Although the ? inton the freestanding GaN substrate. cause the current was

  16. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12T23:59:59.000Z

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  17. Current Perspectives on the Physical and Biological Processes of Humboldt Bay

    E-Print Network [OSTI]

    Schlosser, S. C.; Rasmussen, R.

    2007-01-01T23:59:59.000Z

    Spit, which had absorbed much of the wave energy. Once theseharbor entrance deepened, wave energy came into the bay andand refocusing wave energy that, in turn, increases risk to

  18. Targeting Net Zero Energy at Marine Corps Base Kaneohe Bay, Hawaii...

    Broader source: Energy.gov (indexed) [DOE]

    Targeting Net Zero Energy at Marine Corps Base Kaneohe Bay, Hawaii: Assessment and Recommendations K. Burman, A. Kandt, L. Lisell, S. Booth, A. Walker, J. Roberts and J. Falcey...

  19. Vegetation and sediment characteristics of created and natural Spartina alterniflora marshes in Lower Galveston Bay, Texas

    E-Print Network [OSTI]

    Albertson, Andrea Kai

    1998-01-01T23:59:59.000Z

    Five natural and ten created Spartina altemiflora marshes in the Lower Galveston Bay System, Texas, were compared to determine if there were significantly different vegetative and sediment characteristics associated with each marsh type. Vegetative...

  20. Effects Of Sea Otter Colonization On Soft-Sediment Intertidal Prey Assemblages In Glacier Bay, Alaska

    E-Print Network [OSTI]

    Weitzman, Benjamin Phillip

    2013-01-01T23:59:59.000Z

    structuring in soft-sediment systems over a multi-decadalcaloric demands. In soft-substrate systems, recolonizing seainfluences of otters on soft-sediment systems in Glacier Bay

  1. An Urban Estuary in a Changing World: Diversity, Invasions, and Climate Change in San Francisco Bay

    E-Print Network [OSTI]

    Chang, Andrew L.

    2009-01-01T23:59:59.000Z

    33: 167. ????. 2006. Water Quality of San Francisco Bay.within and among shallow- water Ciona species (Ascidiacea).induced changes in estuarine water quality. Marine Ecology

  2. Long-Term Testing and Properties of Acrylic for the Daya Bay Antineutrino Detectors

    E-Print Network [OSTI]

    Krohn, M; Heeger, K M

    2012-01-01T23:59:59.000Z

    The Daya Bay reactor antineutrino experiment has recently measured the neutrino mixing parameter sin22{\\theta}13 by observing electron antineutrino disappearance over kilometer-scale baselines using six antineutrino detectors at near and far distances from reactor cores at the Daya Bay nuclear power complex. Liquid scintillator contained in transparent target vessels is used to detect electron antineutrinos via the inverse beta-decay reaction. The Daya Bay experiment will operate for about five years yielding a precision measurement of sin22{\\theta}13. We report on long-term studies of poly(methyl methacrylate) known as acrylic, which is the primary material used in the fabrication of the target vessels for the experiment's antineutrino detectors. In these studies, acrylic samples are subjected to gaseous and liquid environmental conditions similar to those experienced during construction, transport, and operation of the Daya Bay acrylic target vessels and detectors. Mechanical and optical stability of the ac...

  3. A Rapid Assessment Method Examining the Ecological Health of Tidal Marine Wetlands in Galveston Bay, Texas

    E-Print Network [OSTI]

    Staszak, Lindsey Ann

    2011-10-21T23:59:59.000Z

    Galveston Bay, and then grouped those measurements into four functional groups: landscape/site characteristics, hydrology, wildlife habitat, and soil characteristics. I then developed a scoring system (minimum 0, maximum 100) to summarize the overall health...

  4. Increase in the Intensity of Postmonsoon Bay of Bengal Tropical Cyclones

    SciTech Connect (OSTI)

    Balaguru, Karthik; Taraphdar, Sourav; Leung, Lai-Yung R.; Foltz, Gregory R.

    2014-05-28T23:59:59.000Z

    The post-monsoon (October-November) tropical cyclone (TC) season in the Bay of Bengal has spawned many of the deadliest storms in recorded history. Here it is shown that the intensity of post-monsoon Bay of Bengal TCs, and the contribution of major TCs to total TC power, increased during 1981-2010. It is found that changes in environmental parameters are responsible for the observed increases in TC intensity. Increases in sea surface temperature and upper ocean heat content made the ocean more conducive to TC development, while enhanced convective instability made the atmosphere more favorable for the growth of TCs. The largest changes in the atmosphere and ocean occurred in the eastern Bay of Bengal, where nearly all major TCs form. These changes are part of positive linear trends, suggesting that the intensity of post-monsoon Bay of Bengal TCs may continue to increase in the future.

  5. Tidal response of a bay with a constricted opening to the sea

    E-Print Network [OSTI]

    Love, Robert Wesley

    1959-01-01T23:59:59.000Z

    Fundamental response of bay for a'L = . 01, H/ho & 1 Fundamental response of bay for o'L = . 1, H/h & . 1 . Fundamental response of bay for crL =, 5, H/h & . 1 . 31 33 I Response factor of a /H for ctL =, 01, H/h as 0 indicated, 10 Response factor of a... -& . 06 . 04 3. H/h = . 1 H/h = . 05 H/ho = . 01 . 02 0 . 1 . 5 1 2 10 20 Bay Parameter, N 50 100 200 Pig. 10: Respoase Factor of a2/H for cL = 0. 1, H/h as isdicatetl. . 08 x . Oe H [ . 04 cd H/h H/ho = . 05 H/h = . 01 0 . 02 . 5 1 2...

  6. Chesapeake Bay Eutrophication: Scientific Understanding, Ecosystem Restoration, and Challenges for Agriculture

    E-Print Network [OSTI]

    Chesapeake Bay Eutrophication: Scientific Understanding, Ecosystem Restoration, and Challenges'scultural eutrophication and extensive efforts to reduce nutrient inputs. In 1987 a commitment was made to reduce of eutrophication were incompletely known. research, policies, and concerted management action Subsequent research

  7. Guidelines for left-turn bays at unsignalized access locations on arterial roadways

    E-Print Network [OSTI]

    Hawley, Patrick Emmett

    1994-01-01T23:59:59.000Z

    It has long been recognized that effective access management along arterial streets can alleviate traffic congestion. A major goal within access management is to limit the speed differential between turning and through vehicles. Left-turn bays...

  8. Targeting Net Zero Energy at Marine Corps Base Kaneohe Bay, Hawaii: Assessment and Recommendations

    Office of Energy Efficiency and Renewable Energy (EERE)

    NREL performed a comprehensive assessment to appraise the potential of MCBH Kaneohe Bay to achieve net zero energy status through energy efficiency, renewable energy, and electric vehicle integration. This report summarizes the results of the assessment and provides energy recommendations.

  9. Age and growth of southern flounder (Paralichthys lethostigma) from Matagorda Bay, Texas

    E-Print Network [OSTI]

    Stunz, Gregory Wayne

    1995-01-01T23:59:59.000Z

    Estimates of age and growth of southern flounder (Paralichthys lethostigma) from Matagorda Bay, Texas were made by analyzing thin sections of otoliths (sagittae) from 892 specimens collected along the Texas coast from May 1992 to January 1995...

  10. Effect of variation in freshwater inflow on phytoplankton productivity and community composition in galveston bay, texas

    E-Print Network [OSTI]

    Thronson, Amanda Mae

    2009-05-15T23:59:59.000Z

    2050, water regulators and managers are faced with the challenge of meeting human needs, while maintaining essential freshwater inflows into estuarine ecosystems. Galveston Bay is of particular concern because 10 million people currently living within...

  11. Political Ecology and Coastal Conservation: A Case Study of Menai Bay Conservation Area, Tanzania

    E-Print Network [OSTI]

    Shinn, Jamie Elizabeth

    2010-06-04T23:59:59.000Z

    . This thesis begins to fill that gap by using a political ecology-based approach to understand the complex historical, political, and environmental factors that affect issues of degradation and conservation in the Menai Bay Conservation Area of Zanzibar...

  12. Hydro-Ecologic Responses to Land Use in Small Urbanizing Watersheds Within the Chesapeake Bay

    E-Print Network [OSTI]

    Palmer, Margaret A.

    Hydro-Ecologic Responses to Land Use in Small Urbanizing Watersheds Within the Chesapeake Bay. The consequences for both the hydrology and 41 #12;42 HYDRO-ECOLOGIC RESPONSES TO LAND USE IN SMALL URBANIZING

  13. DEVELOPING A METHOD TO MONITOR SEDIMENTATION PROCESSES IN MAYAGEZ BAY USING MODIS DATA

    E-Print Network [OSTI]

    Gilbes, Fernando

    b d 1 & 2) October 26, 2005 Close up of the Bay (c) (MODIS band 1 & 2) y = 452.41x + 2.9603 R 2 = 0.7232

  14. Current Perspectives on the Physical and Biological Processes of Humboldt Bay

    E-Print Network [OSTI]

    Schlosser, S. C.; Rasmussen, R.

    2007-01-01T23:59:59.000Z

    food on Humboldt Bay mudflat. M.S. thesis, Humboldt Statecould be applied to mudflat or high marsh communities. TheSlough. Note the higher mudflat bars on the north side of

  15. Ground penetrating radar characterization of wood piles and the water table in Back Bay, Boston

    E-Print Network [OSTI]

    LeFranois, Suzanne O'Neil, 1980-

    2003-01-01T23:59:59.000Z

    Ground penetrating radar (GPR) surveys are performed to determine the depth to the water table and the tops of wood piles beneath a residential structure at 122 Beacon Street in Back Bay, Boston. The area of Boston known ...

  16. Successful Application of Heat Pumps to a DHC System in the Tokyo Bay Area

    E-Print Network [OSTI]

    Yanagihara, R.; Okagaki, A.

    2006-01-01T23:59:59.000Z

    The Harumi-Island District Heating & Cooling (DHC), which is located in the Tokyo Bay area, introduced the heat pump and thermal storage system with the aim of achieving minimum energy consumption, minimum environmental load, and maximum economical...

  17. Empirical Bayes in the presence of exceptional cases, with application to microarray data

    E-Print Network [OSTI]

    Smyth, Gordon K.

    Research, 1G Royal Parade, Parkville, Victoria 3052, Australia. (3) Department of Mathematics, Australia. (5) Corresponding author. Abstract Empirical Bayes is a statistical approach for estimating procedure improves statistical power for most genes in many microarray data sets. Simulations show

  18. The Association of Virulent Vibrio Spp. Bacteria on Gafftopsail and Hardhead Catfish in Galveston Bay

    E-Print Network [OSTI]

    Gilbert, Leslie Deanne

    2011-10-21T23:59:59.000Z

    Vibrio vulnificus (Vv) and V. parahaemolyticus (Vp) are gram negative, halophilic bacteria that occur naturally in estuarine waters of Galveston Bay. Both bacteria have the potential to cause infections in humans either via consumption or direct...

  19. The distribution and diurnal variation of phosphorus in some Texas bays

    E-Print Network [OSTI]

    Bruce, Herbert Ernest

    1959-01-01T23:59:59.000Z

    of these compounds is probably negligible since these compounds are obtained by extraction from nucleo- protein with chloroform (Harvey, 1938). SECTION III DETERMINATION OF THE DISTRIBUTION OF IONIC PHOSPHATE IN BAFFIN BAY AS TRACED HITH P In an effort...

  20. Successful Application of Heat Pumps to a DHC System in the Tokyo Bay Area

    E-Print Network [OSTI]

    Yanagihara, R.; Okagaki, A.

    2006-01-01T23:59:59.000Z

    The Harumi-Island District Heating & Cooling (DHC), which is located in the Tokyo Bay area, introduced the heat pump and thermal storage system with the aim of achieving minimum energy consumption, minimum environmental load, and maximum economical...

  1. Influence of Ga content on the structure and anomalous Hall effect of Fe{sub 1?x}Ga{sub x} thin films on GaSb(100)

    SciTech Connect (OSTI)

    Anh Tuan, Duong; Shin, Yooleemi; Viet Cuong, Tran; Cho, Sunglae, E-mail: slcho@ulsan.ac.kr [Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Phan, The-Long [Department of Physics, Chungbuk National University, Cheongju 361-763 (Korea, Republic of)

    2014-05-07T23:59:59.000Z

    The Fe{sub 1?x}Ga{sub x} thin films (x?=?0.4, 0.5) have been grown on GaSb(100) substrate using molecular beam epitaxy. An epitaxial film with bcc ?-Fe crystal structure (A2) is observed in Fe{sub 0.6}Ga{sub 0.4} film, while an impure Fe{sub 3}Ga phase with DO{sub 3} structure is appeared in Fe{sub 0.5}Ga{sub 0.5} film. The saturated magnetizations at room temperature are observed to be 570?emu/cm{sup 3} and 180?emu/cm{sup 3} and the coercivities to be 170 and 364?Oe for Fe{sub 0.6}Ga{sub 0.4} and Fe{sub 0.5}Ga{sub 0.5}, respectively. A hysteresis trend in Hall resistance vs. magnetic field is observed for Fe{sub 0.5}Ga{sub 0.5} film. However, there is a weak hysteresis noticed in Fe{sub 0.4}Ga{sub 0.6} thin film.

  2. Catastrophic degradation of InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy

    SciTech Connect (OSTI)

    Ueda, O.; Wakao, K.; Komiya, S.; Yamaguchi, A.; Isozumi, S.; Umebu, I.

    1985-12-01T23:59:59.000Z

    Catastrophically degraded InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy, emitting at 727 and 810 nm are investigated by photoluminescence topography, scanning electron microscopy, transmission electron microscopy, and energy dispersive x-ray spectroscopy. The degradation is mainly due to catastrophic optical damage at the facet, i.e., development of <110> dark-line defects from the facet, and rarely due to catastrophic optical damage at some defects, i.e., development of <110> dark-line defects from the defects inside the stripe region. These <110> dark-line defects correspond to complicated dislocation networks connected with dark knots, and are quite similar to those observed in catastrophically degraded GaAlAs/GaAs double-heterostructure lasers. The degradation characteristics of the InGaAsP/InGaP double-heterostructure lasers are rather similar to those in GaAlAs/GaAs double-heterostructure lasers concerning the catastrophic degradation.

  3. Dynamics of thermalization in GaInN/GaN quantum wells grown on ammonothermal GaN

    SciTech Connect (OSTI)

    Binder, J.; Korona, K. P.; Wysmo?ek, A.; Kami?ska, M. [Faculty of Physics, University of Warsaw, ul. Hoza 69, 00-681 Warsaw (Poland); Khler, K.; Kirste, L.; Ambacher, O. [Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg (Germany); Zaj?c, M.; Dwili?ski, R. [AMMONO SA, Czerwonego Krzy?a 2/31, 00-377 Warsaw (Poland)

    2013-12-14T23:59:59.000Z

    In this work, we present measurements of the dynamics of photoexcited carriers in GaInN/GaN quantum wells (QWs) grown on ammonothermal GaN, especially thermalization and recombination rates. Emission properties were measured by time-resolved photoluminescence (PL) and electroluminescence spectroscopy. Due to the use of high quality homoepitaxial material, we were able to obtain very valuable data on carrier thermalization. The temperature dependence of the QW energy observed in PL shows characteristic S-shape with a step of about 10?meV. Such a behavior (related to thermalization and localization at potential fluctuations) is often reported for QWs; but in our samples, the effect is smaller than in heteroepitaxial InGaN/GaN QWs due to lower potential fluctuation in our material. Absorption properties were studied by photocurrent spectroscopy measurements. A comparison of emission and absorption spectra revealed a shift in energy of about 60?meV. Contrary to PL, the QW energy observed in absorption decreases monotonically with temperature, which can be described by a Bose-like dependence E(T)?=?E(0) ? ?/(exp(?/T) ? 1), with parameters ??=?(0.11??0.01) eV, ??=?(355??20)?K, or by a Varshni dependence with coefficients ??=?(10??3) 10{sup ?4}?eV/K and ??=?(1500??500) K. Taking into account absorption and emission, the fluctuation amplitude (according to Eliseev theory) was ??=?14?meV. The time resolved PL revealed that in a short period (<1?ns) after excitation, the PL peaks were broadened because of the thermal distribution of carriers. We interpreted this distribution in terms of quasi-temperature (T{sub q}) of the carriers. The initial T{sub q} was of the order of 500?K. The thermalization led to a fast decrease of T{sub q}. The obtained cooling time in the QW was ?{sub C}?=?0.3?ns, which was faster than the observed recombination time ?{sub R}?=?2.2?ns (at 4?K)

  4. Assessment of bycatch associated with the inshore shrimp fishery in Matagorda Bay, Texas

    E-Print Network [OSTI]

    Sparks, Debbie Laura

    2000-01-01T23:59:59.000Z

    ASSESSMENT OF BYCATCH ASSOCIATED WITH THE INSHORE SHRIMP FISHERY IN MATAGORDA BAY, TEXAS A Thesis by DEBBIE LAURA SPARKS Submitted to the Office of Graduate Studies of Texas ARM University in partial fulfillment of the requirements... for the degree of MASTER OF SCIENCE August 2000 Major Subject: Wildlife and Fisheries Sciences ASSESSMENT OF BYCATCH ASSOCIATED WITH THE INSHORE SHRIMP FISHERY IN MATAGORDA BAY, TEXAS A Thesis by DEBBIE LAURA SPARKS Submitted to Texas ARM University...

  5. DRAFT RICHMOND BAY CAMPUS LRDP | August 2013 Appendix 1: Existing Richmond Field Station Building Inventory (2012)

    E-Print Network [OSTI]

    Lee, Jason R.

    2012-01-01T23:59:59.000Z

    in the fore- ground and the San Francisco Bay and Marina Bay residen- tial community beyond. #12;A.2 DRAFT Research Ofc 1960-1969 16,949 12 Poor 113 Storage 1980-1989 1,800 14 Good 114 Storage pre 1940 4,523 12 Good 120 Storage unknown 269 12 Good 121 Storage unknown 728 15 Good 125 Storage pre 1940 1,024 12 Good

  6. Antecedent Geologic Controls on the Distribution of Oyster Reefs in Copano Bay, Texas

    E-Print Network [OSTI]

    Piper, Erin Alynn

    2011-08-08T23:59:59.000Z

    ANTECEDENT GEOLOGIC CONTROLS ON THE DISTRIBUTION OF OYSTER REEFS IN COPANO BAY, TEXAS A Thesis by ERIN ALYNN PIPER Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment of the requirements... for the degree of MASTER OF SCIENCE May 2010 Major Subject: Oceanography ANTECEDENT GEOLOGIC CONTROLS ON THE DISTRIBUTION OF OYSTER REEFS IN COPANO BAY, TEXAS A Thesis by ERIN ALYNN PIPER Submitted to the Office of Graduate...

  7. Sedimentary environments and processes in a shallow, Gulf Coast Estuary-Lavaca Bay, Texas.

    E-Print Network [OSTI]

    Bronikowski, Jason Lee

    2004-11-15T23:59:59.000Z

    point, the bedload cannot migrate seaward pass the null point. As a result, coarser sediment deposits form upstream of the null point. During flooding, the null point and bedload deposits migrate down into the bay. A turbidity maximum exists... correlation between low and high backscatter to muddy and sandy substrates. Low backscatter correlated to fine grain sediment and the high backscatter to coarser sediment deposits at grab locations, and these were extrapolated to the entire bay floor...

  8. Influence of soil physicochemical properties on hydrology and restoration response in Carolina Bay wetlands.

    SciTech Connect (OSTI)

    Barton, C. D.; Andrews, D.M.; Kolka, R.K.

    2006-04-01T23:59:59.000Z

    Carolina Bays are shallow depression wetlands found in the southeast US that have been severely altered by human activity. The need to restore these complex and diverse systems is well established, but our understanding of basic wetland hydrological processes is limited, hence our ability to predict the need for and/or assess the effectiveness of bay restorations is hindered. Differing physicochemical properties of soils within bay interiors may control bay hydrology. However, previous efforts to establish relationships between soil characteristics and bay hydrology have been inconclusive and the question still remains as to why some bays are ponded throughout the year while others, within a similar landscape unit, are predominantly dry. An assessment of soil and hydrologic characteristics was initiated in restored and unrestored control bays to determine if a relationship exists. Soil morphology was described and permanent monitoring wells were installed at each site. Soil samples were collected by horizon to a depth of 2 meters at the topographic center of each site, and then analyzed. After three years, multiple regression analysis (stepwise backward and forward) was used to establish relationships between the soil physicochemical characteristics and bay hydroperiod in the undisturbed sites. Results from surface soils indicated that exchangeable acidity (EA) was the best single predictor of hydrology. The best double predictor was EA and total N and EA, total N and total C as the best triple predictor. A significant relationship (r2 = 0.96) between hydroperiod and clay content in the argillic horizon (Bt) was also observed. Subsequently, this relationship was utilized to predict hydrologic response using pre-restoration hydroperiod data. The model accurately identified sites that did not need hydrologic restoration (too wet), and effectively showed sites that responded well to restoration activities.

  9. 13 OctOber 2013 Mission Bay Conference Center, San Francisco, USA

    E-Print Network [OSTI]

    Kaski, Samuel

    1­3 OctOber 2013 Mission Bay Conference Center, San Francisco, USA www.beyond-the-genome.com Beyond the Genome 2013 #12;2 1­3 OctOber 2013 Mission Bay Conference Center, San Francisco, USA www.beyond-the-genome.com Beyond the Genome 2013 Exhibition and sponsorship Nick Moss BioMed Central T: +44 (0)20 3192 2723 E: nick

  10. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure

    SciTech Connect (OSTI)

    Barbosa, B. G.; Arakaki, H.; Souza, C. A. de; Pusep, Yu. A. [Instituto de Fisica de So Carlos, Universidade de So Paulo, 13560-970 Sao Carlos, SP (Brazil)

    2014-03-21T23:59:59.000Z

    Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures. We demonstrated that manipulation of the emission energy may be achieved by appropriate choice of the shell structure. The emission at highest energy is generated in the NWs with tunneling thin AlGaAs inner shell and thin GaAs outer shell due to recombination of the photoexcited electrons confined in the outer shell with the holes in the core. Lower energy emission was shown to occur in the NWs with thick outer shell grown in the form of a short-period GaAs/AlGaAs multiple quantum well structure. In this case, the tunneling probability through the multiple quantum wells controls the energy emitted by the NWs. The doping of core results in dominated low energy emission from the GaAs core.

  11. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01T23:59:59.000Z

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  12. Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and reflection high-energy electron diffraction

    E-Print Network [OSTI]

    Brown, J S; Koblmuller, G; Wu, F; Averbeck, R; Riechert, H; Speck, J S

    2006-01-01T23:59:59.000Z

    PA-MBE GaN growth conditions, with substrate temperatures ofthe GaN surface roughness evolution, substrate vicinality,vapor and substrate temperature could form the basis for GaN

  13. Refractive index of erbium doped GaN thin films

    SciTech Connect (OSTI)

    Alajlouni, S.; Sun, Z. Y.; Li, J.; Lin, J. Y.; Jiang, H. X., E-mail: hx.jiang@ttu.edu [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States); Zavada, J. M. [Department of Electrical and Computer Engineering, Polytechnic Institute of New York University, Brooklyn, New York 11201 (United States)

    2014-08-25T23:59:59.000Z

    GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540?nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300?arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers and represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540?nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.

  14. Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors

    SciTech Connect (OSTI)

    Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

    1998-10-14T23:59:59.000Z

    GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

  15. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-05-26T23:59:59.000Z

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  16. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Carrington, P. J.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

    2014-01-07T23:59:59.000Z

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  17. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

    2014-02-03T23:59:59.000Z

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  18. Intersubband absorption in AlN/GaN/AlGaN coupled quantum wells

    SciTech Connect (OSTI)

    Driscoll, Kristina; Bhattacharyya, Anirban; Moustakas, Theodore D.; Paiella, Roberto; Zhou, Lin; Smith, David J. [Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 Saint Mary's Street, Boston, Massachusetts 02215 (United States); Department of Physics and School of Materials, Arizona State University, Tempe, Arizona 85287 (United States)

    2007-10-01T23:59:59.000Z

    AlN/GaN/AlGaN coupled quantum wells grown by molecular beam epitaxy have been developed and characterized via intersubband absorption spectroscopy. In these structures, an AlGaN layer of sufficiently low Al content is used to achieve strong interwell coupling without the need for ultrathin inner barriers. At the same time, AlN is used in the outer barriers to provide the large quantum confinement required for near-infrared intersubband transitions. The composition of the inner barriers also provides a continuously tunable parameter to control the coupling strength. Double intersubband absorption peaks are measured in each sample, at photon energies in good agreement with theoretical expectations.

  19. GaN based nanorods for solid state lighting

    SciTech Connect (OSTI)

    Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

    2012-04-01T23:59:59.000Z

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  20. Reduction of gap states of ternary IIIV semiconductor surfaces by sulfur passivation: Comparative studies of AlGaAs and InGaP

    E-Print Network [OSTI]

    Kim, Sehun

    studies of AlGaAs and InGaP J. M. Seo School of Physics and Technology, Jeonbuk National University on liquid-phase-epitaxy-grown n-type InGaP and AlGaAs surfaces have been studied using x-ray photoelectron treatment in air. For InGaP, sulfur atoms initially reacted with both surface In and Ga atoms and reacted

  1. In0.6Ga0.4AsGaAs quantum-dot infrared photodetector with operating temperature up to 260 K

    E-Print Network [OSTI]

    Florida, University of

    the large band gap material such as AlGaAs or InGaP as blocking barrier to reduce the device dark current 100 K by us- ing a large band gap material such as AlGaAs or InGaP as the blocking barrier to reduce temperature up to 260 K without using the wide band gap AlGaAs or InGaP current blocking bar- rier. The sample

  2. Phase-locking of an InP/InGaP/InGaAs resonant tunneling diode relaxation oscillator by direct optical injection

    E-Print Network [OSTI]

    Eisenstein, Gadi

    Phase-locking of an InP/InGaP/InGaAs resonant tunneling diode relaxation oscillator by direct relaxation oscillator is demonstrated. The diode is an Al-free InP/InGaP/InGaAs structure in the InP/InGaAs/InGaP aluminum-free material system, following the work of Cohen and Ritter [6

  3. Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    the last quantum barrier in InGaN/GaN light-emitting diodes Zabu Kyaw, Zi-Hui Zhang, Wei Liu, Swee Tiam Tan injection and efficiency droop in InGaN/GaN light-emitting diodes with step-stage multiple- quantum distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers Appl. Phys. Lett. 102

  4. IEEE ELECTRON DEVICE LETTERS, VOL. 21, NO. 12, DECEMBER 2000 549 Dual-Gate AlGaN/GaN Modulation-Doped

    E-Print Network [OSTI]

    Rodwell, Mark J. W.

    IEEE ELECTRON DEVICE LETTERS, VOL. 21, NO. 12, DECEMBER 2000 549 Dual-Gate AlGaN/GaN Modulation--We demonstrate dual-gate AlGaN/GaN modula- tion-doped field-effect transistors (MODFETs) with gate-lengths of 0 power amplifiers. Index Terms--AlGaN/GaN, broadband power amplifiers, dual-gate FETs. I. INTRODUCTION

  5. Graded-base InGaN/GaN heterojunction bipolar light-emitting transistors B. F. Chu-Kung,a

    E-Print Network [OSTI]

    Asbeck, Peter M.

    Graded-base InGaN/GaN heterojunction bipolar light-emitting transistors B. F. Chu-Kung,a M. Feng, G; published online 25 August 2006 The authors report radiative recombination from a graded-base InGaN/GaN microwave power has been obtained from GaN field-effect transistors, very few operational GaN-based HBTs

  6. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing://scitation.aip.org/content/aip/journal/apl/105/3?ver=pdfcov Published by the AIP Publishing Articles you may be interested in High efficiency InGaN/GaN (2014); 10.1063/1.4867023 Effect of V-defects on the performance deterioration of InGaN/GaN multiple

  7. Polarized emission lines from A-and B-type excitonic complexes in single InGaN/GaN quantum dots

    E-Print Network [OSTI]

    Nabben, Reinhard

    Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots M Cathodoluminescence measurements on single InGaN/GaN quantum dots QDs are reported. Complex spectra with up to five spectral region have been realized based on InGaN structures.1 Single-photon emission from GaN/AlN quantum

  8. Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate C. Hums, T. Finger, T. Hempel, J. Christen, and A. Dadgara

    E-Print Network [OSTI]

    Nabben, Reinhard

    Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate C. Hums, T. Finger, T. Hempel, J spectra of InGaN/GaN heterostructures and quantum wells epitaxially grown on Si 111 substrates. This Fabry-Perot effect results from the high refractive index contrasts at the GaN/Si and the Air/InGaN interfaces

  9. Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal

    E-Print Network [OSTI]

    Ozbay, Ekmel

    on nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrates prepared by metal undoped Al0.25Ga0.75N/GaN/ AlN heterostructures grown on sapphire substrate. 2007 Elsevier B.V. All of AlGaN on a thick GaN epilayer on a semi- insulating substrate. Spontaneous and strain induced

  10. Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3CSiC ,,001...

    E-Print Network [OSTI]

    As, Donat Josef

    through the substrate. Cubic AlGaN/GaN heterostructures were grown in a RibeNonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3CSiC ,,001... E HFET was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3CSiC 001 by molecular beam

  11. On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    . Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, "Origin of efficiency droop in Ga. Tansu, "Current injection efficiency induced efficiency-droop in InGaN quantum well light. Van de Walle, "Indirect Auger recombination as a cause of efficiency droop in nitride light

  12. Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

    SciTech Connect (OSTI)

    Nakajima, Akira, E-mail: a-nakajima@aist.go.jp; Ogura, Masahiko; Makino, Toshiharu; Nishizawa, Shin-ichi; Ohashi, Hiromichi; Yamasaki, Satoshi [Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba 305-8568 (Japan); Liu, Pucheng; Kakushima, Kuniyuki; Iwai, Hiroshi [Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori, Yokohama, Kanagawa 226-8503 (Japan)

    2014-04-21T23:59:59.000Z

    The electrical properties of two-dimensional hole gases (2DHGs) in GaN/AlGaN/GaN double heterostructures were investigated. The layers were grown on sapphire substrates and a high-quality bulk GaN substrate. The coexistence of 2DHG and 2D electron gases on both sides of the AlGaN layer was confirmed by Hall effect measurements at 80460?K. It was also verified that the 2DHGs were generated by negative polarization at the undoped GaN/AlGaN interface, which did not have a doped Mg acceptor. It was also demonstrated that the 2DHG density could be controlled by varying the AlGaN layer thickness and was inversely related to the 2DHG mobility. The measured relation indicated that the 2DHG mobility is mainly limited by phonon scatterings at around room temperature. As a result, the maximum 2DHG mobility of 16 cm{sup 2}/Vs at 300?K was achieved with a density of 1??10{sup 13}?cm{sup ?2}.

  13. Sources and sinks of [sup 210]Pb in Concepcion Bay, Chile

    SciTech Connect (OSTI)

    Salamanca, Orrego, M.A.

    1993-01-01T23:59:59.000Z

    The sources and sinks of [sup 210]Pb to Concepcion Bay waters were evaluated to discern the relative importance of the main removal and supply mechanisms of this radionuclide to the waters of Concepcion Bay. The main inputs of [sup 210]Pb are the atmospheric supply and the advection of offshore upwelling waters. The atmospheric input was measured in precipitation using a collector and inventories of excess [sup 210]Pb in Rocuant and Raqui marsh sediments. The average atmospheric supply of [sup 210]Pb for Concepcion area is about 0.3 dpm cm[sup [minus]2] yr[sup [minus]1]. The advective input from upwelling varies from 0.6 [+-] 1.3 to 2.1 [+-] 2.0 dpm cm[sup [minus]2] yr[sup [minus]1]. [sup 210]Pb is removed efficiently from the water column as shelf water with high [sup 210]Pb content crosses the continental shelf off Concepcion Bay, with [sup 210]Pb/[sup 226]Ra activity ratios decreasing by a factor of 3 to 4 before reaching the interior of the bay. This is coincident with an increase of suspended matter concentration towards inside the bay. The main removal of [sup 210]Pb from Concepcion Bay waters is deposition in sediments. There is an increase of the [sup 210]Pb inventories toward the bay entrance excess (by a factor of 2) and outside the bay sediments (by a factor of 7). This pattern can be explained by an increase of mixing of sediments by the benthic infauna and enhanced removal of [sup 210]Pb from the water column by particles near the bay mouth. Mass balance calculations are included. The residence time of [sup 210]Pb with respect to removal from water column is estimated to be 17 to 43 days. The results of this research indicate that [sup 210]Pb and probably other similar particle-reactive contaminants (such as heavy metals) are retained and redistributed inside the bay by circulation, resuspension and biological mixing.

  14. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Hfling, S.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Rntgen-Research Center for Complex Material Systems, Universitt Wrzburg, Am Hubland, D-97074, Wrzburg (Germany); Igusa, R.; Iwamoto, S.; Arakawa, Y. [University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

    2014-09-15T23:59:59.000Z

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  15. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12T23:59:59.000Z

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  16. Wavelength limits for InGaN quantum wells on GaN

    SciTech Connect (OSTI)

    Pristovsek, Markus, E-mail: markus@pristovsek.de [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)] [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)

    2013-06-17T23:59:59.000Z

    The emission wavelength of coherently strained InGaN quantum wells (QW) is limited by the maximum thickness before relaxation starts. For high indium contents x>40% the resulting wavelength decreases because quantum confinement dominates. For low indium content x<40% the electron hole wave function overlap (and hence radiative emission) is strongly reduced with increasing QW thickness due to the quantum confined Stark effect and imposes another limit. This results in a maximum usable emission wavelength at around 600?nm for QWs with 40%-50% indium content. Relaxed InGaN buffer layers could help to push this further, especially on non- and semi-polar orientations.

  17. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. (USDOE Idaho Field Office, Idaho Falls, ID (United States)); Koploy, M.A. (General Atomics, San Diego, CA (United States))

    1992-01-01T23:59:59.000Z

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  18. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. [USDOE Idaho Field Office, Idaho Falls, ID (United States); Koploy, M.A. [General Atomics, San Diego, CA (United States)

    1992-08-01T23:59:59.000Z

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  19. Two-color picosecond and continuous-wave experiments on anti-Stokes and Stokes carrier-transfer phenomena in GaAs/AlxGa1 xAs and InGaP2 /AlxGa1 xAs heterostructures

    E-Print Network [OSTI]

    Hohng, Sung Chul

    -transfer phenomena in GaAs/AlxGa1 xAs and InGaP2 /AlxGa1 xAs heterostructures S. C. Hohng, D. W. Khang, Y. H. Ahn, J evidence of the two-step absorption process in anti-Stokes photoluminescence in both GaAs/AlxGa1 xAs and InGaP

  20. Demonstration of a semipolar (10(1)over-bar(3)over-bar) InGaN/GaN green light emitting diode

    E-Print Network [OSTI]

    2005-01-01T23:59:59.000Z

    InGaN / GaN green light emitting diode R. Sharma, a? P. M.green ??525 nm? light emitting diode ?LED?. The fabricated

  1. Proceedings of the Symposium: Current Perspectives on the Physical and Biological Processes of Humboldt Bay, March 2004

    E-Print Network [OSTI]

    Schlosser, S. C.

    2007-01-01T23:59:59.000Z

    1893 and began ditching and dredging the marshland from thetions and Maintenance Dredging. Draft Program- matic 5-Yearwharf was abandoned. Early Dredging Humboldt Bay has been

  2. Monitoring and Modeling Non-Point Source Contributions of Host-Specific Fecal Contamination in San Pablo Bay

    E-Print Network [OSTI]

    Wuertz, Stefan; Bombardelli, Fabian A; Sirikanchana, Kwanrawee; Wang, Dan

    2009-01-01T23:59:59.000Z

    Host-Specific Fecal Contamination in San Pablo Bay Principlelivestock sources of fecal contamination in Kenya with host-Huang. Abstract Fecal contamination from non-point sources

  3. Ecosystem-scale Selenium Model for the San Francisco Bay-Delta Regional Ecosystem Restoration Implementation Plan

    E-Print Network [OSTI]

    Presser, Theresa S.; Luoma, Samuel N.

    2013-01-01T23:59:59.000Z

    both agricultural and oil refinery sources of Se (SFBRWQCBSe hydrodynamics oil refinery effluent North Bay 1) internal inputs of oil refinery wastewaters from pro-

  4. Distributed bragg reflector using AIGaN/GaN

    DOE Patents [OSTI]

    Waldrip, Karen E.; Lee, Stephen R.; Han, Jung

    2004-08-10T23:59:59.000Z

    A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

  5. Ion-beam-induced chemical disorder in GaN

    SciTech Connect (OSTI)

    Ishimaru, Manabu; Zhang, Yanwen; Weber, William J.

    2009-09-08T23:59:59.000Z

    Atomistic structures of high-energy ion irradiated GaN have been examined using transmission electron microscopy (TEM). Single crystalline GaN substrates were irradiated at cryogenic temperature with 2 MeV Au2+ ions to a fluence of 7.35x1015 Au/cm2. Cross-sectional TEM observations revealed that damaged layers consisting of amorphous and nanocrystalline phases are formed at the surface and buried depth of the as-irradiated GaN substrate. Atomic radial distribution functions of the amorphous/poly-nanocrystalline regions showed that not only heteronuclear Ga-N bonds but also homonuclear Ga-Ga bonds exist within the first coordination shell. It was found that the ratio of heteronuclear-to-homonuclear bonds, i.e., the degree of chemical disorder is different between the surface and buried damaged layers. The alternation of chemical disorder was attributed to the difference in the defect formation processes between these layers.

  6. Radiation Hard AlGaN Detectors and Imager

    SciTech Connect (OSTI)

    None

    2012-05-01T23:59:59.000Z

    Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

  7. HOOPER BAY HOUSING ANALYSIS AND ENERGY FEASIBILITY REPORT

    SciTech Connect (OSTI)

    SEA LION CORPORATION; COLD CLIMATE HOUSING RESEARCH CENTER; SOLUTIONS FOR HEALTHY BREATHING; WHITNEY CONSTRUCTION

    2012-12-30T23:59:59.000Z

    Sea Lion applied for and received a grant from the Department of Energy (DOE) towards this end titled ??Energy Efficiency Development and Deployment in Indian Country?. The initial objectives of the Hooper Bay Energy Efficiency Feasibility Study were to demonstrate a 30% reduction in residential/commercial energy usage and identify the economic benefits of implementing energy efficiency measures to the Tribe through: (1) partnering with Whitney Construction and Solutions for Healthy Breathing in the training and hire of 2 local energy assessors to conduct energy audits of 9 representative housing models and 2 commercial units in the community. These homes are representative of 52 homes constructed across different eras. (2) partnering with Cold Climate Housing Research Center to document current electrical and heating energy consumption and analyze data for a final feasibility report (3) assessing the economics of electricity & heating fuel usage; (4) projecting energy savings or fossil fuel reduction by modeling of improvement scenarios and cost feasibility The following two objectives will be completed after the publication of this report: (5) the development of materials lists for energy efficiency improvements (6) identifying financing options for the follow-up energy efficiency implementation phase.

  8. Deep porosity preservation in the Norphlet Formation, Mobil Bay, Alabama

    SciTech Connect (OSTI)

    Ajdukiewicz, J.M.; Paxton, S.T.; Szabvo, J.O. (Exxon Production Research Co., Houston, TX (United States))

    1991-03-01T23:59:59.000Z

    Compaction and pressure solution have commonly been assumed to destroy primary intergranular porosity in deeply buried sandstones. However, primary porosities of up to 20% are preserved at depths greater than 20,000 feet in the Norphlet Formation of Mobile Bay. Previous workers have called upon a number of mechanisms to preserve these high porosities in the Norphlet, specifically chlorite rim cements, gas emplacement, overpressuring, and decementation. In contrast, our study of data from 23 Norphlet wells, including 450 thin sections, indicates that these suggested mechanisms are not the primary cause of porosity preservation in the Norphlet. The authors propose an alternative interpretation: that in the Norphlet, as in other well-sorted, ductile-grain-poor sandstones, porosity loss from compaction did not go to completion under reservoir (premetamorphic) conditions, but stabilized at depths of about 5,000-8,000 feet and porosity values of about 26%. Porosity loss below these values is due to cementation. For cementation to occur, both an adequate source of cement and geochemical conditions favoring cement precipitation must be present. Computer simulations of Norphlet burial history, including post-depositional fluid-flow patterns, suggest that conditions favorable to quartz cementation never occurred in the bulk of the Norphlet because of the formation's stratigraphic position and isolation from a basinward source of silica-saturated fluids.

  9. O?[]O? nuclear ?-decay of ?Ga

    E-Print Network [OSTI]

    Hyman, Bruce Carl

    1999-01-01T23:59:59.000Z

    information, MARS was focused such that only fully stripped N=Z ions were passed, with the vast majority of them being Ga. The second phase of the experiment was a I3-y coincidence experiment. At the back-end of MARS, a 1" x 1 '!4" x 3" four..., using the Weinberg-Salam model of electroweak interactions, to be [23]: A& ? d, ?= ? [41n(mz/m )+ln(m /m?)+2K+A +" ]. (16) Here mz is the mass of the Z boson, me the proton mass, mx is the low energy cutoff for the second and third terms that arise...

  10. P-type doping of GaN

    SciTech Connect (OSTI)

    Wong, R.K.

    2000-04-10T23:59:59.000Z

    After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

  11. Segregation of In to dislocations in InGaN

    E-Print Network [OSTI]

    Horton, Matthew K.; Rhode, Sneha; Sahonta, Suman-Lata; Kappers, Menno J.; Haigh, Sarah J.; Pennycook, Timothy J.; Humphreys, Colin J.; Dusane, Rajiv O.; Moram, Michelle A.

    2015-01-16T23:59:59.000Z

    .; Fischer, A. J.; Thaler, G.; Banas, M. A. Effect of dislocation density on efficiency droop in GaInN?GaN light-emitting diodes. Applied Physics Letters 2007, 91, 231114 DOI: 10.1063/1.2822442. (3) Schubert, M. F.; Xu, J.; Kim, J. K.; Schubert, E. F.; Kim... , M. H.; Yoon, S.; Lee, S. M.; Sone, C.; Sakong, T.; Park, Y. Polarization-matched GaInN?AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop. Applied Physics Letters 2008, 93, 041102 DOI: 10.1063/1.2963029. (4) Hsu, J. W. P...

  12. Surface Science Analysis of GaAs Photocathodes Following Sustained...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Analysis of GaAs Photocathodes Following Sustained Electron Beam Delivery. Abstract: Degradation of the photocathode materials employed in photoinjectors represents a challenge for...

  13. Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application

    SciTech Connect (OSTI)

    Ren, F.; Abernathy, C.R.; Pearton, S.J.; Lothian, J.R.; Wisk, P.W.; Fullowan, T.R.; Youngkai Chen (AT and T Bell Labs., Murray Hill, NJ (United States)); Yang, L.W.; Fu, S.T.; Brozovich, R.S. (General Electric Co., Syracuse, NY (USSR))

    1993-07-01T23:59:59.000Z

    As an alternative to AlGaAs/GaAs heterojunction bipolar transistors (HBT's) for microwave applications, InGaP/ GaAs HBT's with carbon-doped base layers grown by metal organic molecular beam epitaxy (MOMBE) are demonstrated with excellent dc, RF, and microwave performance. As previously reported, with a 700-[angstrom]-thick base layer (135-[Omega]/[open square] sheet resistance), a dc current gain of 25, and cutoff frequency and maximum frequency of oscillation above 70 GHz were measured for a 2 [times] 5-[mu]m[sup 2] emitter area device. A device with 12 cells, each consisting of a 2 [times] 15-[mu] m[sup 2] emitter area device for a total emitter area of 360 [mu] m[sup 2], was power tested at 4 GHz under continuous-wave (CW) bias condition. The device delivered 0.6-W output power with 13-dB linear gain and a power-added efficiency of 50%.

  14. High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

    SciTech Connect (OSTI)

    Chang, Chiao-Yun; Li, Hen; Lu, Tien-Chang, E-mail: timtclu@mail.nctu.edu.tw [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300 (China)

    2014-03-03T23:59:59.000Z

    In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20?mA and a 27.0% efficiency droop at 100?mA (corresponding to a current density of 69?A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.

  15. Influence of substrate quality on structural properties of AlGaN/GaN superlattices grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Schubert, F. [NaMLab gGmbH, Nthnitzer Strae 64, 01187 Dresden (Germany); Merkel, U.; Schmult, S. [TU Dresden, Institute of Semiconductors and Microsystems, Nthnitzer Strae 64, 01187 Dresden (Germany); Mikolajick, T. [NaMLab gGmbH, Nthnitzer Strae 64, 01187 Dresden (Germany); TU Dresden, Institute of Semiconductors and Microsystems, Nthnitzer Strae 64, 01187 Dresden (Germany)

    2014-02-28T23:59:59.000Z

    Short-period AlGaN/GaN superlattices were established as versatile test structures to investigate the structural properties of molecular beam epitaxy (MBE)-grown GaN and AlGaN layers and their dependence on the GaN substrate quality. X-ray diffractometry data of the investigated superlattices allow access to relevant structural parameters such as aluminum mole fraction and layer thicknesses. The occurrence of theoretically predicted intense high-order satellite peaks and pronounced interface fringes in the diffraction pattern reflects abrupt interfaces and perfect 2-dimensional growth resulting in smooth surfaces. The data unambiguously demonstrate that the structural quality of the MBE grown layers is limited by the structural properties of the GaN substrate.

  16. Ferromagnetic semiconductors based upon AlGaP M. E. Overberg,a)

    E-Print Network [OSTI]

    Hebard, Arthur F.

    band-gap ternary InGaP, which is lattice matched to GaAs. An immediate application of the DMS, with its wide band-gap binary GaP, AlP and ternary InGaP, AlGaP, AlInP components, is used for devices

  17. Radiation response of single and dual junction p{sup +}n InGaP/GaAs space solar cells

    SciTech Connect (OSTI)

    Walters, R.J.; Xapsos, M.A.; Summers, G.P. [Naval Research Lab., Washington, DC (United States); Cotal, H.L.; Messenger, S.R. [SFA, Inc., Largo, MD (United States)

    1997-12-31T23:59:59.000Z

    The radiation response of single and dual-junction p{sup +}n InGaP/GaAs solar cells is studied. The degradation mechanisms of single-junction InGaP cells are identified, and characteristic degradation curves in terms of displacement damage dose are calculated. The response of dual-junction cells is presented, and the response of each sub-cell is discussed. The cell response is compared with those of other technologies. The effect of current injection on irradiated InGaP cell is presented.

  18. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04T23:59:59.000Z

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  19. Surface donor states distribution post SiN passivation of AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Goyal, Nitin, E-mail: nitin@unik.no [Carinthian Tech Research CTR AG, Europastrae 4/1, Technologiepark Villach, A- 9524 Villach/St. Magdalen (Austria); Department of Electronics and Telecommunication, Norwegian University of Science and Technology, Trondheim NO7034 (Norway); Fjeldly, Tor A. [Department of Electronics and Telecommunication, Norwegian University of Science and Technology, Trondheim NO7034 (Norway)

    2014-07-21T23:59:59.000Z

    In this paper, we present a physics based analytical model to describe the effect of SiN passivation on two-dimensional electron gas density and surface barrier height in AlGaN/GaN heterostructures. The model is based on an extraction technique to calculate surface donor density and surface donor level at the SiN/AlGaN interface. The model is in good agreement with the experimental results and promises to become a useful tool in advanced design and characterization of GaN based heterostructures.

  20. Free-standing AlxGa1-xAs heterostructures by gas-phase etching of germanium

    E-Print Network [OSTI]

    As compounds encompassing low aluminum content AlGaAs, InGaAs, InGaP, etc. , typi- cally, a sacrificial Al

  1. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; zgr, .; Morko, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2013-11-04T23:59:59.000Z

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  2. EA-1992: Funding for Principle Power, Inc., for the WindFloat Pacific Offshore Wind Demonstration Project, offshore of Coos Bay, Oregon

    Broader source: Energy.gov [DOE]

    Funding for Principle Power, Inc., for the WindFloat Pacific Offshore Wind Demonstration Project, offshore of Coos Bay, Oregon

  3. Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat

    E-Print Network [OSTI]

    Shepelyansky, Dima

    Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

  4. GROWTH OF GaN ON POROUS SiC AND GaN SUBSTRATES C. K. Inoki and T. S. Kuan

    E-Print Network [OSTI]

    Feenstra, Randall

    1 GROWTH OF GaN ON POROUS SiC AND GaN SUBSTRATES C. K. Inoki and T. S. Kuan Department of Physics Institute, University of Illinois, Urbana, IL 61801 ABSTRACT We have studied the growth of GaN on porous SiC and GaN substrates, employing both plasma-assisted molecular beam epitaxy (PAMBE) and metalorganic

  5. GaN-based two-dimensional surface-emitting photonic crystal lasers with AlN/GaN distributed Bragg reflector

    E-Print Network [OSTI]

    Fan, Shanhui

    GaN-based two-dimensional surface-emitting photonic crystal lasers with AlN/GaN distributed Bragg 14 December 2007; published online 11 January 2008 GaN-based two-dimensional 2D surface-emitting photonic crystal PC lasers with AlN/GaN distributed Bragg reflectors are fabricated and demonstrated

  6. Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates

    E-Print Network [OSTI]

    Manfra, Michael J.

    Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures-dimensional arrays Appl. Phys. Lett. 100, 203117 (2012) Partially filled intermediate band of Cr-doped GaN films Appl at telecommunication wavelengths J. Appl. Phys. 111, 093721 (2012) GaN epitaxy on Cu(110) by metal organic chemical

  7. Evidence for the southward migration of mud banks in Florida Bay Kristian H. Taylor , Samuel J. Purkis

    E-Print Network [OSTI]

    Purkis, Sam

    primarily of biogenic carbonate lime mud originating from local calcium-carbonate producers (Stockman et al Florida Bay (Stockman et al., 1967). The production of calcium carbonate mud is estimated at 118 g/m2 of carbonate mud within Florida Bay. The calcareous algae Penicillus is also a contributor to the mud within

  8. Sediment accumulation in San Leandro Bay, Alameda County, California, during the 20th century - A preliminary report

    SciTech Connect (OSTI)

    Nolan, K.M.; Fuller, C.C.

    1986-01-01T23:59:59.000Z

    Major changes made in the configuration of San Leandro Bay, Alameda County, California, during the 20th century have caused rapid sedimentation within parts of the Bay. Comparison of bathymetric surveys indicates that sedimentation in the vicinity of the San Leandro Bay channel averaged 0.7 cm/annum between 1856 and 1984. Lead-210 data collected at four shallow water sites east of the San Leandro Bay channel indicated that sedimentation rates have averaged between 0.06 and 0.28 cm/annum. Because bioturbation of bottom sediments cannot be discounted, better definition of this range in sedimentation rates would require measuring the activity of lead-210 on incoming sediments. In addition to sediment deposited in the vicinity of the San Leandro Bay channel and open, shallow areas to the east, 850,740 cu m of sediment was deposited between 1948 and 1983 in an area dredged at the mouth of San Leandro Creek. All available data indicate that between 1,213,000 and 1,364,000 cu m of sediment was deposited in San Leandro Bay between 1948 and 1983. Sediment yield data from an adjacent drainage basin, when combined with inventories of lead-210 and cesium-137, indicate that most of the sediment deposited in San Leandro Bay is coming from resuspension of bottom sediments or from erosion of marshes or shorelines of San Leandro or San Francisco Bay. 31 refs., 7 figs., 4 tabs.

  9. Impacts of Radioactive 137Cs on Marine Bacterioplankton: Effects of the Fukushima Disaster on Hawaii's Kaneohe Bay Bacterial Communities

    E-Print Network [OSTI]

    Heller, Paul

    Impacts of Radioactive 137Cs on Marine Bacterioplankton: Effects of the Fukushima Disaster such catastrophe, a tsunami off the coast of Japan, occurred on March 11, 2011. The tsunami caused the Fukushima on the bacterioplankton community of Kaneohe Bay in Oahu, Hawaii. The bay is in the direct path of Fukushima's radioactive

  10. Diagenesis and porosity evolution, Norphlet Formation in Mobile Bay, Alabama

    SciTech Connect (OSTI)

    Lock, B.E.; Broussard, S.W.

    1988-02-01T23:59:59.000Z

    Major deposits of natural gas were discovered in the Norphlet Formation beneath Mobile Bay in 1979. The reservoirs are in arkosic sandstones at depths greater than 20,000 ft, yet the productive interval has porosities up to 25%. Overlying the porous zone is a tight cap of thoroughly cemented sandstone of variable thickness, which poses problems for exploration and production. The tight zone, which together with overlying basal Smackover forms the reservoir seal, may be so thick that the underlying productive interval is substantially reduced. The upper parts of the Norphlet, in common with many other eolian sands, were reworked during a subsequent transgression. There is not a full correspondence, however, between the tight rock and the reworked facies. The origin of the impermeable zone is better understood as a function of the diagenetic history only partially related to depositional facies. It is proposed that, at an early stage of diagenesis, brines derived from the underlying Louann Salt and Werner Formation deposited anhydrite and possibly halite cements in the lower part of the Norphlet Formation. Marine working of the upper sands may have helped to disperse these brines from the upper part of the Norphlet, and the depth of reworking may even have been partially influenced by incipient cementation. The zones not already cemented by evaporites were subsequently cemented by quartz and feldspar overgrowths. At a very late stage, deep in the subsurface, the evaporite cements were flushed from the lower parts of the Norphlet, and locally abundant small feldspar crystals randomly nucleated in the pores. Gas migrated into the formation shortly afterward. Evaporites may play another important role in the petroleum geology of the deep Norphlet: the source of the gas may have been the underlying evaporites.

  11. Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n-lnGaAs/lnP/p-InGaAs heterostructures

    E-Print Network [OSTI]

    Luryi, Serge

    Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n (Received 23 November 1992; accepted for publication 4 March 1993) The realization of collector-up light for the collector stripe definition. Electrons, injected over the wide-gap heterostructure barrier (InAlAs or In

  12. Free excitons in wurtzite GaN A. V. Rodina*

    E-Print Network [OSTI]

    Nabben, Reinhard

    Free excitons in wurtzite GaN A. V. Rodina* I. Physics Institute, Justus Liebig University in wurtzite GaN. Using polarization-dependent measurements we were able to resolve the fine-structure energy these data a theory is developed for the exciton energy structure in hexagonal semiconductors with wurtzite

  13. Ohmic contacts to p-type GaP

    E-Print Network [OSTI]

    Jorge Estevez, Humberto Angel

    1996-01-01T23:59:59.000Z

    was measured by the Cox-Strack method. Ohmic contacts based on the Zn/Pd system were developed. The Zn(350A)/Pd(IOOA)/p-GaP and Zn(350A)/Pd(IOOA)/p-GaP gave rather high values of the contact resistivity, 3-8xl 0-4 f2CM2. An improvement in the contact...

  14. The development of integrated chemical microsensors in GaAs

    SciTech Connect (OSTI)

    CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

    1999-11-01T23:59:59.000Z

    Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

  15. Ohmic contacts to p-type GaP

    E-Print Network [OSTI]

    Jorge Estevez, Humberto Angel

    1996-01-01T23:59:59.000Z

    was measured by the Cox-Strack method. Ohmic contacts based on the Zn/Pd system were developed. The Zn(350A)/Pd(IOOA)/p-GaP and Zn(350A)/Pd(IOOA)/p-GaP gave rather high values of the contact resistivity, 3-8xl 0-4 f2CM2. An improvement in the contact...

  16. Evaluation of dredged material proposed for ocean disposal from Gravesend Bay Anchorage, New York

    SciTech Connect (OSTI)

    Barrows, E.S.; Gruendell, B.D. [Battelle/Marine Sciences Lab., Sequim, WA (United States)

    1996-09-01T23:59:59.000Z

    The Gravesend Bay Anchorage was one of seven waterways that the US Army Corps of Engineers-New York District (USACE-NYD) requested the Battelle Marine Sciences Laboratory (MSL) to sample and evaluate for dredging and disposal in February 1994. Sediment samples were submitted for physical and chemical analyses to provide baseline sediment chemistry data on the Gravesend Bay Anchorage. Individual sediment core samples collected at the Gravesend Bay Anchorage were analyzed for grain size, moisture content, and total organic carbon (TOC). Two samples, one of composited sediment cores representing the southeast corner of the anchorage (COMP GR), and one sediment core representing the northeast corner of the anchorage (Station GR-1 0), were analyzed for bulk density, specific gravity, metals, chlorinated pesticides, polychlorinated biphenyl (PCB) congeners, polynuclear aromatic hydrocarbons (PAH), and 1,4-dichlorobenzene.

  17. Independent measurement of the neutrino mixing angle ?13 via neutron capture on hydrogen at Daya Bay

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jaffe D. E.; Jaffe, D.E., et al. Daya Bay Collaboration

    2014-10-01T23:59:59.000Z

    A new measurement of the ?13 mixing angle has been obtained at the Daya Bay Reactor Neutrino Experiment via the detection of inverse beta decays tagged by neutron capture on hydrogen. The antineutrino events for hydrogen capture are distinct from those for gadolinium capture with largely different systematic uncertainties, allowing a determination independent of the gadolinium-capture result and an improvement on the precision of the ?13 measurement. With a 217-day antineutrino data set obtained with six antineutrino detectors and from six 2.9 GWth reactors, the rate deficit observed at the far hall is interpreted as sin22?13=0.0830.018 in the three-flavor oscillationmoremodel. When combined with the gadolinium-capture result from Daya Bay, we obtain sin22?13=0.0890.008 as the final result for the six-antineutrino-detector configuration of the Daya Bay experiment.less

  18. Independent measurement of the neutrino mixing angle ?13 via neutron capture on hydrogen at Daya Bay

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jaffe D. E.; Jaffe, D.E., et al. Daya Bay Collaboration

    2014-10-01T23:59:59.000Z

    A new measurement of the ?13 mixing angle has been obtained at the Daya Bay Reactor Neutrino Experiment via the detection of inverse beta decays tagged by neutron capture on hydrogen. The antineutrino events for hydrogen capture are distinct from those for gadolinium capture with largely different systematic uncertainties, allowing a determination independent of the gadolinium-capture result and an improvement on the precision of the ?13 measurement. With a 217-day antineutrino data set obtained with six antineutrino detectors and from six 2.9 GWth reactors, the rate deficit observed at the far hall is interpreted as sin22?13=0.0830.018 in the three-flavor oscillation model. When combined with the gadolinium-capture result from Daya Bay, we obtain sin22?13=0.0890.008 as the final result for the six-antineutrino-detector configuration of the Daya Bay experiment.

  19. Polarized x-ray spectroscopy of quaternary ferromagnetic semiconductor (Ga,Mn)(As,P)

    E-Print Network [OSTI]

    Wadley, P.

    2011-01-01T23:59:59.000Z

    quaternary diluted magnetic semiconductor (Ga,Mn)(As,P) as aIn diluted magnetic semiconductors such as (Ga,Mn)As, whichquaternary diluted magnetic semiconductors such as (Ga,Mn)(

  20. Amorphization Processes in Au Ion Irradiated GaN at 150 - 300...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Processes in Au Ion Irradiated GaN at 150 - 300 K. Amorphization Processes in Au Ion Irradiated GaN at 150 - 300 K. Abstract: Epitaxial single-crystal gallium nitride (GaN) films...