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Sample records for bay ga bangor

  1. Bangor Hydro-Electric Co | Open Energy Information

    Open Energy Info (EERE)

    Co Place: Maine Service Territory: Maine Phone Number: 1-800-499-6600 Website: bhe.com Twitter: @Bangor Facebook: https:www.facebook.compagesBangor-Hydro-Electric...

  2. PP-89-1 Bangor Hydro-Electric Company | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    -1 Bangor Hydro-Electric Company PP-89-1 Bangor Hydro-Electric Company Presidental permit authorizing Bangor Hydro-Electric Company to construc, operate and maintain electric ...

  3. EIS-0166: Bangor Hydro-Electric Transmission Line, Maine

    Broader source: Energy.gov [DOE]

    The Department of Energy prepared this environmental impact statement while considering whether to authorize a Presidential permit for Bangor Hydro to construct a new electric transmission facility at the U.S. border with Canada.

  4. Daya Bay

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bay Daya Bay Basics The basics of Daya Bay computing at PDSF. Read More » Data Management All Daya Bay raw data is transferred to PDSF. Read More » File Systems Daya Bay has space on 2 elizas: 6TB on /eliza7 and 35TB on /eliza16. Read More » Running on Carver The Daya Bay software is installed on PDSF on /common so is therefore unavailable on Carver. At this point there has been no effort to port the code to /project for use on... Read More » Last edited: 2016-04-29 11:35:01

  5. Record of Decision for the Presidential Permit, PP-89, for Bangor Hydro-Electric Company (DOE/EIS-0116) (1/25/96)

    SciTech Connect (OSTI)

    N /A

    1996-01-25

    Bangor Hydro applied to the DOE for a Presidential permit to construct a new electric transmission facility at the U.S. border with Canada. That action was determined to be ''a major federal action, significantly affecting the quality of the human environment'' within the meaning of NEPA. An EIS was issued on August 18, 1995, that considered the environmental impacts associated with granting or denying the Presidential permit. This ROD determined that allowing construction of the new electric facilities along alternative transmission line corridors and the options for alternative energy supplies discussed in the EIS did not prove preferable to granting the Presidential permit for construction along the proposed route.

  6. PP-89 Bangor

    Office of Environmental Management (EM)

  7. CX-007090: Categorical Exclusion Determination

    Office of Energy Efficiency and Renewable Energy (EERE)

    United States Navy Security System UpgradesCX(s) Applied: B1.15, B2.2Date: 05/24/2011Location(s): Albuquerque, NM; Kings Bay, GA; Bangor, WA, Georgia, New Mexico, WashingtonOffice(s): NNSA-Headquarters, Sandia Site Office

  8. Hooper Bay Efficiency Feasibility Study

    Office of Environmental Management (EM)

    (OUR PEOPLE) Hooper Bay Energy Efficiency Feasibility ... The name Hooper Bay came into common usage after a post ... BAY IS MARITIME. THE MEAN ANNUAL SNOWFALL IS 75 INCHES ...

  9. Bay Area | Open Energy Information

    Open Energy Info (EERE)

    Page Edit History Bay Area Jump to: navigation, search Contents 1 Clean Energy Clusters in the Bay Area 1.1 Products and Services in the Bay Area 1.2 Research and Development...

  10. Chesapeake Bay Test Site | Open Energy Information

    Open Energy Info (EERE)

    Chesapeake Bay Test Site Jump to: navigation, search Name Chesapeake Bay Test Site Facility Chesapeake Bay Test Site Sector Wind energy Facility Type Offshore Wind Facility Status...

  11. Module bay with directed flow

    DOE Patents [OSTI]

    Torczynski, John R.

    2001-02-27

    A module bay requires less cleanroom airflow. A shaped gas inlet passage can allow cleanroom air into the module bay with flow velocity preferentially directed toward contaminant rich portions of a processing module in the module bay. Preferential gas flow direction can more efficiently purge contaminants from appropriate portions of the module bay, allowing a reduced cleanroom air flow rate for contaminant removal. A shelf extending from an air inlet slit in one wall of a module bay can direct air flowing therethrough toward contaminant-rich portions of the module bay, such as a junction between a lid and base of a processing module.

  12. Draft environmental impact statement for construction and operation of the proposed Bangor Hydro-Electric Company`s second 345-kV transmission tie line to New Brunswick

    SciTech Connect (OSTI)

    1993-10-01

    This Draft Environmental Impact Statement (DEIS) was prepared by the US Department of Energy (US DOE). The proposed action is the issuance of Presidential Permit PP-89 by DOE to Bangor Hydro-Electric Company to construct and operate a new international transmission line interconnection to New Brunswick, Canada that would consist of an 83.8 mile (US portion), 345-kilovolt (kV) alternating current transmission line from the US-Canadian border at Baileyville, Maine to an existing substation at Orrington, Maine. The principal environmental impacts of the construction and operation of the transmission line would be incremental in nature and would include the conversion of forested uplands (mostly commercial timberlands) and wetlands to right-of-way (small trees, shrubs, and herbaceous vegetation). The proposed line would also result in localized minor to moderate visual impacts and would contribute a minor incremental increase in the exposure of some individuals to electromagnetic fields. This DEIS documents the purpose and need for the proposed action, describes the proposed action and alternatives considered and provides a comparison of the proposed and alternatives routes, and provides detailed information on analyses of the environmental consequences of the proposed action and alternatives, as well as mitigative measures to minimize impacts.

  13. Evaluation Project 4492

    National Nuclear Security Administration (NNSA)

    Sandia National LaboratoriesNew Mexico (SNLNM) proposes to design, test, and install security system upgrades, at the Kings Bay, Georgia, and Bangor, Washington, Naval Submarine ...

  14. Field's Point Wastewater Treatment Facility (Narragansett Bay...

    Open Energy Info (EERE)

    Field's Point Wastewater Treatment Facility (Narragansett Bay Commission) Jump to: navigation, search Name Field's Point Wastewater Treatment Facility (Narragansett Bay Commission)...

  15. Bay Biodiesel LLC | Open Energy Information

    Open Energy Info (EERE)

    Biodiesel LLC Jump to: navigation, search Name: Bay Biodiesel LLC Place: Martinez, California Zip: 94553 Product: Biodiesel producers in Martinez, California. References: Bay...

  16. Bay Solar Power Design | Open Energy Information

    Open Energy Info (EERE)

    Solar Power Design Jump to: navigation, search Name: Bay Solar Power Design Place: California Product: US-based PV system installer. References: Bay Solar Power Design1 This...

  17. EA-389 Greay Bay Energy VI, LLC | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Order authorizing Great Bay Energy to export electric energy to Canada. EA-389 Great Bay ... Great Bay Energy VI, LLC EA-389-A Great Bay Energy VI, LLC EA-342-A Royal Bank of Canada

  18. BayWa Group | Open Energy Information

    Open Energy Info (EERE)

    BayWa Group Jump to: navigation, search Name: BayWa Group Place: Munich, Germany Zip: 81925 Sector: Services, Solar Product: Germany-based company with international operations...

  19. Felton Bay Logistics, LLC | Open Energy Information

    Open Energy Info (EERE)

    Logistics, LLC1 This article is a stub. You can help OpenEI by expanding it. Felton Bay Logistics, LLC is a company based in San Diego, California. Felton Bay offers training,...

  20. Tuscola Bay Wind | Open Energy Information

    Open Energy Info (EERE)

    Jump to: navigation, search Name Tuscola Bay Wind Facility Tuscola Bay Wind Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy...

  1. bayesPicture.jpg | OSTI, US Dept of Energy Office of Scientific and

    Office of Scientific and Technical Information (OSTI)

    Technical Information bayesPicture

  2. Keweenaw Bay Indian Community Presentation

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    - Keweenaw Bay Indian Community PRESENTATION Assessing the Feasibility of Renewable Energy Development and Energy Efficiency Deployment on Tribal Lands DOE Tribal Energy Program Review October 25 29, 2010 Gregg Nominelli, J.D. Economic Developer BACKGROUND INFORMATION  U.S. Department of Justice - Community Capacity Development Office  Alternative & Renewable Energy Committee Established by Tribal Council  Council for Energy Resource Tribes (CERT) - Developed Strategic Energy Plan

  3. Bay Area | National Nuclear Security Administration

    National Nuclear Security Administration (NNSA)

    Bay Area San Francisco Bay Area Aerial Radiation Assessment Survey (SAN JOSE and SAN FRANCISCO, California) - A helicopter may be seen flying at low altitudes over portions of the San Francisco Bay Area from January 29 through February 6, 2016. The purpose of the flyovers is to measure naturally occurring background radiation. Officials from the National Nuclear... NNSA to Conduct Aerial Radiological Surveys Over San Francisco, Pacifica, Berkeley, And Oakland, CA Areas A U.S. Department of

  4. Bay Front Biomass Facility | Open Energy Information

    Open Energy Info (EERE)

    NEEDS 2006 Database Retrieved from "http:en.openei.orgwindex.php?titleBayFrontBiomassFacility&oldid397174" Feedback Contact needs updating Image needs updating...

  5. Glacier Bay Inc | Open Energy Information

    Open Energy Info (EERE)

    search Name: Glacier Bay Inc Place: Oakland, California Zip: 94601 Product: US-based, advanced thermal control, sound reduction, and DC power management technologies...

  6. Hooper Bay Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    Alaska Village Electric Coop (AVEC) Developer Alaska Village Electric Coop (AVEC) Energy Purchaser Alaska Village Electric Coop (AVEC) Location Hooper Bay AK Coordinates...

  7. Massachusetts Bay Transportation Authority | Open Energy Information

    Open Energy Info (EERE)

    Authority Name: Massachusetts Bay Transportation Authority Address: 10 Park Plaza, Suite 3910 Boston, MA 02116 Zip: 02116 Website: www.mbta.com Coordinates:...

  8. San Luis Bay Estates Pool & Spa Low Temperature Geothermal Facility...

    Open Energy Info (EERE)

    Estates Pool & Spa Low Temperature Geothermal Facility Jump to: navigation, search Name San Luis Bay Estates Pool & Spa Low Temperature Geothermal Facility Facility San Luis Bay...

  9. Doe Bay Village Resort Pool & Spa Low Temperature Geothermal...

    Open Energy Info (EERE)

    Doe Bay Village Resort Pool & Spa Low Temperature Geothermal Facility Jump to: navigation, search Name Doe Bay Village Resort Pool & Spa Low Temperature Geothermal Facility...

  10. Cold Bay Hot Spring Geothermal Area | Open Energy Information

    Open Energy Info (EERE)

    Cold Bay Hot Spring Geothermal Area Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Cold Bay Hot Spring Geothermal Area Contents 1 Area Overview 2 History and...

  11. Near Fish Bay Geothermal Area | Open Energy Information

    Open Energy Info (EERE)

    Near Fish Bay Geothermal Area Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Near Fish Bay Geothermal Area Contents 1 Area Overview 2 History and Infrastructure 3...

  12. Tampa Bay Area Ethanol Consortium | Open Energy Information

    Open Energy Info (EERE)

    Bay Area Ethanol Consortium Jump to: navigation, search Name: Tampa Bay Area Ethanol Consortium Place: Tampa, Florida Sector: Biomass Product: Consortium researching ethanol from...

  13. San Francisco Bay Conservation and Development Commission | Open...

    Open Energy Info (EERE)

    Conservation and Development Commission Jump to: navigation, search Logo: San Francisco Bay Conservation and Development Commission Name: San Francisco Bay Conservation and...

  14. Pedro Bay Village Council (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    Pedro Bay Village Council (Utility Company) Jump to: navigation, search Name: Pedro Bay Village Council Place: Alaska Phone Number: (907) 850-2225 Website: www.swamc.orghtml...

  15. Bay Resource Management Center Biomass Facility | Open Energy...

    Open Energy Info (EERE)

    Resource Management Center Biomass Facility Jump to: navigation, search Name Bay Resource Management Center Biomass Facility Facility Bay Resource Management Center Sector Biomass...

  16. New and Underutilized Technology: High Bay LED Lighting

    Broader source: Energy.gov [DOE]

    The following information outlines key deployment considerations for high bay LED lighting within the Federal sector.

  17. General Atomics (GA) | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's...

  18. Keweenaw Bay Indian Community- 2010 Wind Project

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Keweenaw Bay Indian Community (KBIC) is committed to preserving our natural environment and reducing the amount of fossil fuels consumed while developing "green" business manufacturing jobs on tribal lands.

  19. Keweenaw Bay Indian Community- 2010 Project

    Broader source: Energy.gov [DOE]

    The Keweenaw Bay Indian Community (KBIC) is committed to preserving our natural environment and reducing the amount of fossil fuels consumed while developing "green" business manufacturing jobs on tribal lands.

  20. SCHEDULE: Bay Area Maker Faire 2016

    Broader source: Energy.gov [DOE]

    Find out where and when to meet some of our top innovators and explore the technologies on display from the Department of Energy at the 11th annual Bay Area Maker Faire.

  1. Really Off the Grid: Hooper Bay, AK

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Really Off the Grid - Hooper Bay, AK Old Housing - Energy Efficiency Vintage Hooper Bay Renewable Energy - Before & After DOE Tribal Energy Grant * $200,000 - Energy Efficiency Feasibility Study * Hire & train 2-5 local energy assessors * Energy audits of 24 homes with blower doors, etc. - Reduce energy consumption from air leakage - Moisture/mold issues - Reduce drafts * $7/gallon heating fuel * ~ $0.55/kWh - electricity (over half of households behind on utility payments) Is your house

  2. Keeping comets and asteroids at bay

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Keeping Comets And Asteroids At Bay Community Connections: Your link to news and opportunities from Los Alamos National Laboratory Latest Issue: September 1, 2016 all issues All Issues » submit Keeping comets and asteroids at bay Every two years, experts from around the globe convene at the Planetary Defense Conference. August 1, 2012 dummy image Read our archives Contacts Editor Linda Anderman Email Community Programs Office Kurt Steinhaus Email Every two years, experts from around the globe

  3. Gradient Analysis and Classification of Carolina Bay Vegetation: A Framework for Bay Wetlands Conservation and Restoration

    SciTech Connect (OSTI)

    Diane De Steven,Ph.D.; Maureen Tone,PhD.

    1997-10-01

    This report address four project objectives: (1) Gradient model of Carolina bay vegetation on the SRS--The authors use ordination analyses to identify environmental and landscape factors that are correlated with vegetation composition. Significant factors can provide a framework for site-based conservation of existing diversity, and they may also be useful site predictors for potential vegetation in bay restorations. (2) Regional analysis of Carolina bay vegetation diversity--They expand the ordination analyses to assess the degree to which SRS bays encompass the range of vegetation diversity found in the regional landscape of South Carolina's western Upper Coastal Plain. Such comparisons can indicate floristic status relative to regional potentials and identify missing species or community elements that might be re-introduced or restored. (3) Classification of vegetation communities in Upper Coastal Plain bays--They use cluster analysis to identify plant community-types at the regional scale, and explore how this classification may be functional with respect to significant environmental and landscape factors. An environmentally-based classification at the whole-bay level can provide a system of templates for managing bays as individual units and for restoring bays to desired plant communities. (4) Qualitative model for bay vegetation dynamics--They analyze present-day vegetation in relation to historic land uses and disturbances. The distinctive history of SRS bays provides the possibility of assessing pathways of post-disturbance succession. They attempt to develop a coarse-scale model of vegetation shifts in response to changing site factors; such qualitative models can provide a basis for suggesting management interventions that may be needed to maintain desired vegetation in protected or restored bays.

  4. Bay County, Michigan: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    is classified as ASHRAE 169-2006 Climate Zone Number 5 Climate Zone Subtype A. Registered Energy Companies in Bay County, Michigan Dow Chemical Co Dow Kokam Places in Bay County,...

  5. Summary of Test Results for Daya Bay Rock Samples (Technical...

    Office of Scientific and Technical Information (OSTI)

    Summary of Test Results for Daya Bay Rock Samples Citation Details In-Document Search Title: Summary of Test Results for Daya Bay Rock Samples You are accessing a document from ...

  6. Summary of Test Results for Daya Bay Rock Samples (Technical...

    Office of Scientific and Technical Information (OSTI)

    Technical Report: Summary of Test Results for Daya Bay Rock Samples Citation Details In-Document Search Title: Summary of Test Results for Daya Bay Rock Samples A series of ...

  7. Galveston Bay Biodiesel LP GBB | Open Energy Information

    Open Energy Info (EERE)

    Galveston Bay Biodiesel LP GBB Jump to: navigation, search Name: Galveston Bay Biodiesel LP (GBB) Place: Houston, Texas Product: Developer of a 75.8m litre per year biodiesel...

  8. Bristol Bay Native Corporation- 2003 Project

    Broader source: Energy.gov [DOE]

    Bristol Bay Native Corporation (BBNC), through its subsidiary, Bristol Environmental and Engineering Services Corporation, will assess renewable energy opportunities within the BBNC region of southwest Alaska. The goals of this initiative are to encourage tribal self-sufficiency, create jobs, improve environmental quality, and help make our nation more secure through the development of clean, affordable, and reliable renewable energy technologies. The study will identify technologies or systems that could potentially reduce the cost or improve the sustainability of electricity within the Bristol Bay region.

  9. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  10. Responses of upland herpetofauna to the restoration of Carolina Bays and thinning of forested Bay Margins.

    SciTech Connect (OSTI)

    Ledvina, Joseph A.

    2008-05-01

    Research on the effects of wetland restoration on reptiles and amphibians is becoming more common, but almost all of these studies have observed the colonization of recently disturbed habitats that were completely dry at the time of restoration. In a similar manner, investigations herpetofaunal responses to forest management have focused on clearcuts, and less intensive stand manipulations are not as well studied. To evaluate community and population responses of reptiles and amphibians to hydrology restoration and canopy removal in the interior of previously degraded Carolina bays, I monitored herpetofauna in the uplands adjacent to six historically degraded Carolina bays at the Savannah River Site (SRS) in South Carolina for four years after restoration. To evaluate the effects of forest thinning on upland herpetofauna, forests were thinned in the margins of three of these bays. I used repeated measures ANOVA to compare species richness and diversity and the abundance of selected species and guilds between these bays and with those at three reference bays that were not historically drained and three control bays that remained degraded. I also used Non-metric Multidimensional Scaling (NMDS) to look for community-level patterns based treatments.

  11. Reconnaissance survey of eight bays in Puget Sound

    SciTech Connect (OSTI)

    Strand, J.A.; Crecelius, E.A.; Pearson, W.H.; Fellingham, G.W.; Elston, R.E.

    1988-03-01

    From 1983 to 1985, Battelle/Marine Research Laboratory conducted reconnaissance-level field and laboratory studies to better characterize toxic contamination problems occurring in selected urban-industrialized bays (Bellingham Bay, Port Gardner - Everett Harbor, Fourmile Rock - Elliot Bay dump site vicinity, Sinclair Inlet) of Puget Sound. It was envisioned that this goal was best achieved by simultaneously determining levels of contamination in selected baseline or 'reference bays' (Samish Bay, Case Inlet, Dabob Bay, Sequim Bay). Two major tasks composed this effort. The first was conducted in 1983 and consisted of preliminary or screening surveys to collect and analyze sediment samples from 101 stations distributed in the four urban-industrialized bays (Figure 1), and at 80 stations distributed in the four baseline bays (Figure 2). The second task was undertaken in 1984 and involved detailed surveys and analyses of the same bays, but at a limited number of stations (32 in urban embayments, 16 in baseline bays). The stations to be resampled in 1984 were the ''cleanest'' of the clean and the ''dirtiest'' of the dirty as determined by the 1983 sediment chemical analyses, and within restrictions imposed by sediment type.

  12. GA SNC Solar | Open Energy Information

    Open Energy Info (EERE)

    GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and Sierra Nevada Corp. References: GA-SNC...

  13. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  14. Covered Product Category: Industrial Luminaires (High/Low Bay) | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Energy Industrial Luminaires (High/Low Bay) Covered Product Category: Industrial Luminaires (High/Low Bay) The Federal Energy Management Program (FEMP) provides acquisition guidance and Federal efficiency requirements for Industrial Luminaires (High/Low Bay). Federal laws and requirements mandate that agencies meet these efficiency requirements in all procurement and acquisition actions that are not specifically exempted by law. Meeting Energy Efficiency Requirements for Industrial

  15. EIS-0494: Excelerate Liquefaction Solutions Lavaca Bay LNG Project...

    Broader source: Energy.gov (indexed) [DOE]

    gas from existing pipeline systems to the LNG terminal facilities. EIS-0494: Excelerate Liquefaction Solutions Lavaca Bay LNG Project Public Comment Opportunities No public ...

  16. Bay Mills Indian Community Energy Reduction Feasibility Study

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Tribal Council of Michigan, Inc. Environmental Services Division Chris Kushman Bay Mills Indian Community Energy Reduction Feasibility Study *DOE Tribal Energy Program *Tribal ...

  17. Ecological Forecasting in Chesapeake Bay: Using a Mechanistic...

    Office of Scientific and Technical Information (OSTI)

    oxygen, and the likelihood of encountering several noxious species, including harmful algal blooms and water-borne pathogens, for the purpose of monitoring the Bay's ecosystem. ...

  18. Kawela Bay, Hawaii: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Kawela Bay, Hawaii: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 21.7033333, -158.01 Show Map Loading map... "minzoom":false,"mappingservice...

  19. San Francisco Bay Area Aerial Radiation Assessment Survey | National...

    National Nuclear Security Administration (NNSA)

    Visit www.nnsa.energy.gov for more information. Related Topics Bay Area California ... business leaders dedicate Livermore Solar Center Sandia's California site invites ...

  20. MHK Projects/Kachemak Bay Tidal Energy Project | Open Energy...

    Open Energy Info (EERE)

    Kachemak Bay Tidal Energy Project < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... "minzoom":false,"mappingservice":"googlemaps3","...

  1. Promising Technology: High Bay Light-Emitting Diodes

    Broader source: Energy.gov [DOE]

    High bay LEDs offer several advantages over conventional high intensity discharge (HID) luminaires including longer lifetimes, reduced maintenance costs, and lower energy consumption.

  2. McKay Bay Facility Biomass Facility | Open Energy Information

    Open Energy Info (EERE)

    Biomass Facility Facility McKay Bay Facility Sector Biomass Facility Type Municipal Solid Waste Location Hillsborough County, Florida Coordinates 27.9903597, -82.3017728...

  3. Bristol Bay Borough, Alaska: Energy Resources | Open Energy Informatio...

    Open Energy Info (EERE)

    as an ASHRAE 169-2006 Climate Zone Number 7. Places in Bristol Bay Borough, Alaska King Salmon, Alaska Naknek, Alaska South Naknek, Alaska Retrieved from "http:...

  4. Bay Harbor Islands, Florida: Energy Resources | Open Energy Informatio...

    Open Energy Info (EERE)

    Bay Harbor Islands is a town in Miami-Dade County, Florida. It falls under Florida's 20th congressional district.12 References US Census Bureau Incorporated place and...

  5. 9 Cool Technologies at the Bay Area Maker Faire

    Broader source: Energy.gov [DOE]

    Get a glimpse of some of the technologies from our National Labs in the Make | ENERGY Pavilion at the Bay Area Maker Faire. You can look AND touch.

  6. Keweenaw Bay Indian Community: 'First Steps' Toward Tribal Weatherizat...

    Broader source: Energy.gov (indexed) [DOE]

    Keweenaw Bay Indian Community 'First Steps' Toward Tribal Weatherization Human Capacity Building Denver, CO - October 29 th , 2010 Debra L. Picciano . CAP Administrator Federally ...

  7. PP-89 Bangor-Electric Company | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PP-82 Vermont Electric Power Company, Inc. (VELCO) Application for Presidental Permit OE Docket No. PP-230-4 International Transmission Company: Settlement Agreement PP-92 El Paso ...

  8. Targeting Net Zero Energy at Marine Corps Base Kaneohe Bay, Hawaii...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Targeting Net Zero Energy at Marine Corps Base Kaneohe Bay, Hawaii: Assessment and Recommendations Targeting Net Zero Energy at Marine Corps Base Kaneohe Bay, Hawaii: Assessment...

  9. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  10. Neutron calibration sources in the Daya Bay experiment

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liu, J.; Carr, R.; Dwyer, D. A.; Gu, W. Q.; Li, G. S.; McKeown, R. D.; Qian, X.; Tsang, R. H. M.; Wu, F. F.; Zhang, C.

    2015-07-09

    We describe the design and construction of the low rate neutron calibration sources used in the Daya Bay Reactor Anti-neutrino Experiment. Such sources are free of correlated gamma-neutron emission, which is essential in minimizing induced background in the anti-neutrino detector. Thus, the design characteristics have been validated in the Daya Bay anti-neutrino detector.

  11. Low-bay Lighting Energy Conservation Measures

    Energy Science and Technology Software Center (OSTI)

    2010-12-31

    This software requires inputs of simple low-bay lighting system inventory information and calculates the energy and cost benefits of various retrofit opportunities. This tool includes energy conservation measures for: Low-wattage T8 lighting retrofit, T12 to T8 lighting retrofit, LED Exit signs retrofit, Occupancy sensors, Screw-in lighting retrofit, and central lighting controls. This tool calculates energy savings, demand reduction, cooling load reduction, heating load increases, cost savings, building life cycle costs including: Simple payback, discounted payback,more » net-present value, and savings to investment ratio. In addition this tool also displays the environmental benefits of a project.« less

  12. Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

    SciTech Connect (OSTI)

    Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea

    2015-09-28

    We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

  13. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  14. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  15. Muon Simulation at the Daya Bay SIte

    SciTech Connect (OSTI)

    Mengyun, Guan; Jun, Cao; Changgen, Yang; Yaxuan, Sun; Luk, Kam-Biu

    2006-05-23

    With a pretty good-resolution mountain profile, we simulated the underground muon background at the Daya Bay site. To get the sea-level muon flux parameterization, a modification to the standard Gaisser's formula was introduced according to the world muon data. MUSIC code was used to transport muon through the mountain rock. To deploy the simulation, first we generate a statistic sample of sea-level muon events according to the sea-level muon flux distribution formula; then calculate the slant depth of muon passing through the mountain using an interpolation method based on the digitized data of the mountain; finally transport muons through rock to get underground muon sample, from which we can get results of muon flux, mean energy, energy distribution and angular distribution.

  16. High-bay Lighting Energy Conservation Measures

    Energy Science and Technology Software Center (OSTI)

    2010-12-31

    This software requires inputs of simple high-bay lighting system inventory information and calculates the energy and cost benefits of various retrofit opportunities. This tool includes energy conservation measures for: 1000 Watt to 750 Watt High-pressure Sodium lighting retrofit, 400 Watt to 360 Watt High Pressure Sodium lighting retrofit, High Intensity Discharge to T5 lighting retrofit, High Intensity Discharge to T8 lighting retrofit, and Daylighting. This tool calculates energy savings, demand reduction, cost savings, building lifemore » cycle costs including: simple payback, discounted payback, net-present value, and savings to investment ratio. In addition this tool also displays the environmental benefits of a project.« less

  17. Morro Bay, California: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Map This article is a stub. You can help OpenEI by expanding it. Morro Bay is a city in San Luis Obispo County, California. It falls under California's 23rd congressional...

  18. Huntington Bay, New York: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Huntington Bay is a village in Suffolk County, New York. It falls under New York's 2nd...

  19. City of Larsen Bay, Alaska (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    City of Larsen Bay Place: Alaska Phone Number: (907)847-2211 Website: www.swamc.orghtmlsouthwest-a Outage Hotline: (907)847-2211 References: EIA Form EIA-861 Final Data File...

  20. West Bay Shore, New York: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. West Bay Shore is a census-designated place in Suffolk County, New York.1 References ...

  1. Keweenaw Bay Indian Community- 2010 Energy Efficiency Project

    Broader source: Energy.gov [DOE]

    The goal of the project is to build the staff capacity to enable the Keweenaw Bay Indian Community (KBIC) to establish a tribal weatherization program that promotes energy sufficiency throughout the tribal community.

  2. The ecology of Tampa Bay, Florida: An estuarine profile

    SciTech Connect (OSTI)

    Lewis, R.R. III; Estevez, E.D.

    1988-09-01

    Tampa Bay is Florida's largest open-water estuary and one of the most highly urbanized. This report summarizes and synthesizes many years of scientific investigation into Tampa Bay's geology, hydrology and hydrography, water chemistry, and biotic components. The estuary is a phytoplankton-based system, with mangroves being the second most important primary producer. Benthic organisms are abundant and diverse, although in parts of the bay the benthos consists of a relatively few opportunistic and pollution indicator species. The estuary provides habitat for the juveniles and adults of a number of commercial and recreational fishery species. Significant changes occurring as a result of urbanization and industrialization include significant declines in intertidal wetlands and seagrass meadows, changes in circulation and flushing, and degradation of water quality. Important management issues include dredge and fill operations, restoration of fisheries, increasing freshwater flow to the bay, and eutrophication. 257 refs., 85 figs., 27 tabs.

  3. LISBURNE LISBURNE KUPARUK RIVER PRUDHOE BAY MILNE POINT ALPINE

    U.S. Energy Information Administration (EIA) Indexed Site

    Gas Reserve Class Prudhoe Bay Area Barrow Area Index Map Northern Alaska Oil and Gas Fields 2004 Onshore Area Gas Reserve Class No 2004 Gas Reserves 0.1 - 10 MMCF 10.1 - 100 MMCF ...

  4. LISBURNE LISBURNE KUPARUK RIVER PRUDHOE BAY MILNE POINT ALPINE

    U.S. Energy Information Administration (EIA) Indexed Site

    BOE Reserve Class Prudhoe Bay Area Barrow Area Index Map Northern Alaska Oil and Gas Fields 2004 Onshore Area BOE Reserve Class No 2004 Reserves 0.1 - 10 MBOE 10.1 - 100 MBOE 100.1 ...

  5. LISBURNE LISBURNE KUPARUK RIVER PRUDHOE BAY MILNE POINT ALPINE

    U.S. Energy Information Administration (EIA) Indexed Site

    Liquids Reserve Class Prudhoe Bay Area Barrow Area Index Map Northern Alaska Oil and Gas Fields 2004 Onshore Area Liquids Reserve Class No 2004 Liquids Reserves 0.1 - 10 Mbbl 10.1 ...

  6. NREL: Wind Research - Building 251 and High Bay

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Building 251 and High Bay Photo of an aerial shot of a large blue and grey building with parking lot and cars in the foreground. Building 251 at the NWTC houses administrative and...

  7. Project Reports for Keweenaw Bay Indian Community- 2010 Project

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Keweenaw Bay Indian Community (KBIC) is committed to preserving our natural environment and reducing the amount of fossil fuels consumed while developing "green" business manufacturing jobs on tribal lands.

  8. Searching for θ13 at Daya Bay

    SciTech Connect (OSTI)

    Giedt, Joel; Napolitano, James

    2015-06-08

    An experiment has been carried out by the Daya Bay Collaboration to measure the neutrino mixing angle θ13. In addition, the grant has supported research into lattice field theory beyond the standard model.

  9. Cross-media approach to saving the Chesapeake Bay

    SciTech Connect (OSTI)

    Appleton, E.L.

    1995-12-01

    A project EPA began in August will investigate the possibility of cross-media emissions trading as a new approach to reducing nitrogen loadings to the Chesapeake Bay. Working with the Environmental Defense Fund (EDF), the Agency hopes to device a NO{sub x} trading framework along the lines of existing sulfur dioxide trading plans to control acid rain. The Chesapeake Air Project will examine the feasibility of using emissions trading between and water sources, including trading credits between power plants and mobile sources, to reduce the atmospheric deposition of nitrogen to the bay. The progress of the Bay Program nutrient reduction goals is up for reevaluation in 1997, and Knopes and EDF economist Brian Morton have high hopes that the trading plan, which would place a cap on the mass of emissions and rate of deposition allowed by all sources, will become the atmospheric deposition portion of the Chesapeake Bay Program`s Nutrient Reduction Strategy. 6 refs.

  10. Covered Product Category: Industrial Luminaires (High/Low Bay...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    2' x 4' 85 1' x 8' 88 High Bay, Non-Linear, Metal Halide Distribution Pattern Input ... ballasts, which should be considered in the comparison of the two system types. ...

  11. Nassau Bay, Texas: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    This article is a stub. You can help OpenEI by expanding it. Nassau Bay is a city in Harris County, Texas. It falls under Texas's 22nd congressional district.12 References...

  12. BayWa Sunways JV | Open Energy Information

    Open Energy Info (EERE)

    JV that specialises in developing, planning and realizing medium-sized to large photovoltaic systems and solar plants. References: BayWa & Sunways JV1 This article is a stub....

  13. North Bay Village, Florida: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    it. North Bay Village is a city in Miami-Dade County, Florida. It falls under Florida's 20th congressional district.12 References US Census Bureau Incorporated place and...

  14. Project Reports for Keweenaw Bay Indian Community- 2010 Project

    Broader source: Energy.gov [DOE]

    The goal of the project is to build the staff capacity to enable the Keweenaw Bay Indian Community (KBIC) to establish a tribal weatherization program that promotes energy sufficiency throughout the tribal community.

  15. The Daya Bay Reactor Neutrino Experiment Sees Evidence that Electron...

    Office of Science (SC) Website

    The two antineutrino detectors in Daya Bay Hall 1, shown here prior to the pool being filled with ultrapure water. The pool is lined with photomultiplier tubes to track any ...

  16. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  17. San Francisco Bay Area Aerial Radiation Assessment Survey | National

    National Nuclear Security Administration (NNSA)

    Nuclear Security Administration | (NNSA) San Francisco Bay Area Aerial Radiation Assessment Survey January 27, 2016 (SAN JOSE and SAN FRANCISCO, California) - A helicopter may be seen flying at low altitudes over portions of the San Francisco Bay Area from January 29 through February 6, 2016. The purpose of the flyovers is to measure naturally occurring background radiation. Officials from the National Nuclear Security Administration (NNSA) announced that the radiation assessment will cover

  18. Anderson Bay Shallow Geophysics Report (Other) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Anderson Bay Shallow Geophysics Report Citation Details In-Document Search Title: Anderson Bay Shallow Geophysics Report Conf Paper Authors: Louie, John [1] ; Colton, Dudley ; Marlon, Ramos ; Dustin, Naphan + Show Author Affiliations UNR Publication Date: 2013-09-30 OSTI Identifier: 1111654 Report Number(s): DOE-Pyramid-2842-jl10 DOE Contract Number: EE0002842 Resource Type: Other Research Org: Regents of the Nevada System of Higher Education Sponsoring Org: USDOE Contributing Orgs: PLPT,

  19. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  20. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  1. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  2. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    SciTech Connect (OSTI)

    Kalentyeva, I. L. Zvonkov, B. N.; Vikhrova, O. V.; Danilov, Yu. A.; Demina, P. B.; Dorokhin, M. V.; Zdoroveyshchev, A. V.

    2015-11-15

    InGaAs/GaAsSb/GaAs bilayer quantum-well structures containing a magnetic-impurity δ-layer (Mn) at the GaAs/InGaAs interface are experimentally studied for the first time. The structures are fabricated by metal organic chemical-vapor deposition (MOCVD) and laser deposition on substrates of conducting (n{sup +}) and semi-insulating GaAs in a single growth cycle. The InGaAs-layer thickness is varied from 1.5 to 5 nm. The significant effect of a decrease in the InGaAs quantum-well thickness on the optical and magnetotransport properties of the structures under study is detected. Nonlinear magnetic-field dependence of the Hall resistance and negative magnetoresistance at temperatures of ≤30–40 K, circular polarization of the electroluminescence in a magnetic field, opposite behaviors of the photoluminescence and electroluminescence emission intensities in the structures, and an increase in the contribution of indirect transitions with decreasing InGaAs thickness are observed. Simulation shows that these effects can be caused by the influence of the δ-layer of acceptor impurity (Mn) on the band structure and the hole concentration distribution in the bilayer quantum well.

  3. Application to Export Electric Energy OE Docket No. EA-389 Great Bay Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    VI, LLC | Department of Energy 89 Great Bay Energy VI, LLC Application to Export Electric Energy OE Docket No. EA-389 Great Bay Energy VI, LLC Application from Great Bay Energy to export electric energy to Canada. EA-389 Great Bay Energy VI, (CN).pdf (579.86 KB) More Documents & Publications EA-389 Greay Bay Energy VI, LLC EA-389-A Great Bay Energy VI, LLC Application to Export Electric Energy OE Docket No. EA-327-A DC Energy,

  4. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs...

    Office of Scientific and Technical Information (OSTI)

    irradiated AlGaNGaN HEMTs This content will become publicly available on August 26, 2016 Title: Degradation mechanisms of 2 MeV proton irradiated AlGaNGaN HEMTs Authors: ...

  5. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  6. Cathodic Protection of the Yaquina Bay Bridge

    SciTech Connect (OSTI)

    Bullard, Sophie J.; Cramer, Stephen D.; Covino, Bernard S., Jr.; Holcomb, Gordon R.; Russell, James H.; Laylor, H.M.; Cryer, C.B.

    2001-02-01

    The Yaquina Bay Bridge in Newport, Oregon, was designed by Conde B. McCullough and built in 1936. The 3,223-foot (982 m) structure is a combination of concrete arch approach spans and a steel through arch over the shipping channel. Cathodic protection is used to prevent corrosion damage to the concrete arches. The Oregon Department of Transportation (Oregon DOT) installed a carbon anode coating (DAC-85) on two of the north approach spans in 1985. This anode was operated at a current density of 6.6 mA/m2(0.6 mA/ft2). No failure of the conductive anode was observed in 1990, five years after application, or in 2000, 15 years after application. Thermal-sprayed zinc anodes 20 mils (0.5 mm) thick were applied to half the south approach spans beginning in 1990. Thermal-sprayed zinc anodes 15 mils (0.4 mm) thick were applied to the remaining spans in 1996. These anodes were operated at a current density of 2.2 mA/m2(0.2 mA/ft2). In 1999, four zones on the approach spans were included in a two-year field trial of humectants to improve zinc anode performance. The humectants LiNO3 and LiBr were applied to two zones; the two adjacent zones were left untreated as controls. The humectants substantially reduced circuit resistance compared to the controls.

  7. (In,Ga)As/GaP electrical injection quantum dot laser

    SciTech Connect (OSTI)

    Heidemann, M. Höfling, S.; Kamp, M.

    2014-01-06

    The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm{sup 2} at a heat-sink temperature of 80 K.

  8. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  9. Replacement of tritiated water from irradiated fuel storage bay

    SciTech Connect (OSTI)

    Castillo, I.; Boniface, H.; Suppiah, S.; Kennedy, B.; Minichilli, A.; Mitchell, T.

    2015-03-15

    Recently, AECL developed a novel method to reduce tritium emissions (to groundwater) and personnel doses at the NRU (National Research Universal) reactor irradiated fuel storage bay (also known as rod or spent fuel bay) through a water swap process. The light water in the fuel bay had built up tritium that had been transferred from the heavy water moderator through normal fuel transfers. The major advantage of the thermal stratification method was that a very effective tritium reduction could be achieved by swapping a minimal volume of bay water and warm tritiated water would be skimmed off the bay surface. A demonstration of the method was done that involved Computational Fluid Dynamics (CFD) modeling of the swap process and a test program that showed excellent agreement with model prediction for the effective removal of almost all the tritium with a minimal water volume. Building on the successful demonstration, AECL fabricated, installed, commissioned and operated a full-scale system to perform a water swap. This full-scale water swap operation achieved a tritium removal efficiency of about 96%.

  10. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  11. EA-389-A Great Bay Energy VI, LLC | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Rescission of export authorization to export electric energy to Canada. EA-389-A Great Bay ... Energy OE Docket No. EA-389 Great Bay Energy VI, LLC EA-342-A Royal Bank of Canada

  12. A hole modulator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2015-02-09

    The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ?332?meV to ?294?meV at 80?A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

  13. Tampa Bay Designated as the Newest Clean Cities Coalition | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Tampa Bay Designated as the Newest Clean Cities Coalition Tampa Bay Designated as the Newest Clean Cities Coalition November 21, 2014 - 1:36pm Addthis Dr. Judy Genshaft, the University of South Florida's president, welcomes attendees to the Tampa Bay Clean Cities Ceremony. | Photo courtesy of the Clean Cities Coalition. Dr. Judy Genshaft, the University of South Florida's president, welcomes attendees to the Tampa Bay Clean Cities Ceremony. | Photo courtesy of the Clean Cities

  14. U.S. Naval Station, Guantanamo Bay, Cuba | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Naval Station, Guantanamo Bay, Cuba U.S. Naval Station, Guantanamo Bay, Cuba Fact sheet describes the Energy Savings Performance Contract (ESPC) success story on environmental stewardship and cost savings at the U.S. Naval Station at Guantanamo Bay, Cuba. Download the U.S. Naval Station at Guantanamo Bay, Cuba fact sheet. (316.37 KB) More Documents & Publications Idaho Operations AMWTP Fact Sheet Heating Ventilation and Air Conditioning Efficiency Greenpower Trap Mufflerl System

  15. Load test of the 272W Building high bay roof deck and support structure

    SciTech Connect (OSTI)

    McCoy, R.M.

    1994-09-28

    This reports the results of the Load Test of the 272W Building High Bay Roof Deck and Support Structure.

  16. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

    2014-05-05

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  17. Bay State announces growth strategies to cope with changes

    SciTech Connect (OSTI)

    1996-07-01

    A top executive for New England`s biggest independent gas distributor says deregulation of the utility industry offers unprecedented opportunities for growth, but getting there will radically change the way it does business. To achieve dramatic growth, Bay State Gas Co. needs to base their strategies on anticipating the changes in the industry and aggressively positioning themselves to capture the new opportunities that the new business environment is creating. This includes: accelerating the unbundling of transportation service all the way to the residential customer level; forging strategic relationships with retail energy product and service companies as a means of increasing throughput on Bay State`s system; implementing performance-based rates that provide financial incentives for lowering costs and improving customer service; accelerating the implementation of sophisticated information systems to streamline key business processes; and aggressively expanding Bay State`s nonregulated Energy Products and Services business. These steps are discussed.

  18. Energy @ Bay Area Maker Faire | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy @ Bay Area Maker Faire Energy @ Bay Area Maker Faire It's dubbed the "Greatest Show (and Tell) on Earth." Of course we'll be there! From satellites to a 3D-printed Jeep to remote controlled robots to carbon capture microbeads, we'll be displaying some of the coolest technologies from across the Energy Department. We also want to meet innovators like you! Representatives from the Department of Energy's National Labs, the Office of Energy Efficiency and Renewable Energy (EERE),

  19. Project Reports for Bristol Bay Native Corporation- 2003 Project

    Office of Energy Efficiency and Renewable Energy (EERE)

    Bristol Bay Native Corporation (BBNC), through its subsidiary, Bristol Environmental and Engineering Services Corporation, will assess renewable energy opportunities within the BBNC region of southwest Alaska. The goals of this initiative are to encourage tribal self-sufficiency, create jobs, improve environmental quality, and help make our nation more secure through the development of clean, affordable, and reliable renewable energy technologies. The study will identify technologies or systems that could potentially reduce the cost or improve the sustainability of electricity within the Bristol Bay region.

  20. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Final Environmental Impact Statement EIS-0476: ...

  1. Carrier quenching in InGaP/GaAs double heterostructures

    SciTech Connect (OSTI)

    Wells, Nathan P. Driskell, Travis U.; Hudson, Andrew I.; LaLumondiere, Stephen D.; Lotshaw, William T.; Forbes, David V.; Hubbard, Seth M.

    2015-08-14

    Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm{sup 2} in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes to reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.

  2. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  3. Oxidation of ultrathin GaSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  4. Oxidation of ultrathin GaSe

    SciTech Connect (OSTI)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  5. OSTIblog Articles in the Thomas Bayes Topic | OSTI, US Dept of Energy

    Office of Scientific and Technical Information (OSTI)

    Office of Scientific and Technical Information Bayes Topic The Reverend Thomas Bayes by Kathy Chambers 06 Nov, 2013 in Products and Content 13432 bayesPicture.jpg The Reverend Thomas Bayes Read more about 13432 During the 1700's, the Reverend Thomas Bayes was a nonconformist minister at the Mount Sion Chapel in Tunbridge Wells, UK, about 40 miles southeast of central London. Having studied both theology and logic at the University of Edinburgh, he was also a mathematician and developed a

  6. EA-1995: Trestle Bay Ecosystem Restoration Project, Clatsop County, Oregon

    Broader source: Energy.gov [DOE]

    The U.S. Army Corps of Engineers prepared, with DOE’s Bonneville Power Administration (BPA) as a cooperating agency, an EA that evaluates the potential environmental impacts of a proposal to improve estuary habitat in Trestle Bay. BPA’s proposed action is to partially fund the proposal.

  7. LISBURNE LISBURNE KUPARUK RIVER PRUDHOE BAY MILNE POINT ALPINE

    U.S. Energy Information Administration (EIA) Indexed Site

    BOE Reserve Class Prudhoe Bay Area Barrow Area Index Map Northern Alaska Oil and Gas Fields 2004 Onshore Area BOE Reserve Class No 2004 Reserves 0.1 - 10 MBOE 10.1 - 100 MBOE 100.1 - 1,000 MBOE 1,000.1 - 10,000 MBOE 10,000.1 - 100,000 MBOE > 100,000 MBOE

  8. LISBURNE LISBURNE KUPARUK RIVER PRUDHOE BAY MILNE POINT ALPINE

    U.S. Energy Information Administration (EIA) Indexed Site

    Gas Reserve Class Prudhoe Bay Area Barrow Area Index Map Northern Alaska Oil and Gas Fields 2004 Onshore Area Gas Reserve Class No 2004 Gas Reserves 0.1 - 10 MMCF 10.1 - 100 MMCF 100.1 - 1,000 MMCF 1,000 - 10,000 MMCF 10,000 - 100,000 MMCF > 100,000 MMCF

  9. LISBURNE LISBURNE KUPARUK RIVER PRUDHOE BAY MILNE POINT ALPINE

    U.S. Energy Information Administration (EIA) Indexed Site

    Liquids Reserve Class Prudhoe Bay Area Barrow Area Index Map Northern Alaska Oil and Gas Fields 2004 Onshore Area Liquids Reserve Class No 2004 Liquids Reserves 0.1 - 10 Mbbl 10.1 - 100 Mbbl 100.1 - 1,000 Mbbl 1,000.1 - 10,000 Mbbl > 10,000 Mbbl

  10. Covered Product Category: Industrial Luminaires (High/Low Bay)

    Broader source: Energy.gov [DOE]

    The Federal Energy Management Program (FEMP) provides acquisition guidance and Federal efficiency requirements for Industrial Luminaires (High/Low Bay). Federal laws and requirements mandate that agencies meet these efficiency requirements in all procurement and acquisition actions that are not specifically exempted by law.

  11. Risk assessment for produced water discharges to Louisiana Open Bays

    SciTech Connect (OSTI)

    Meinhold, A.F.; DePhillips, M.P.; Holtzman, S.

    1995-06-23

    Data were collected prior to termination of discharge at three sites (including two open bay sites at Delacroix Island and Bay De Chene) for the risk assessments. The Delacroix Island Oil and Gas Field has been in production since the first well drilling in 1940; the Bay De Chene Field, since 1942. Concentrations of 226Ra, 228Ra, 210Po, and 228Th were measured in discharges. Radium conc. were measured in fish and shellfish tissues. Sediment PAH and metal conc. were also available. Benthos sampling was conducted. A survey of fishermen was conducted. The tiered risk assessment showed that human health risks from radium in produced water appear to be small; ecological risk from radium and other radionuclides in produced water also appear small. Many of the chemical contaminants discharged to open Louisiana bays appear to present little human health or ecological risk. A conservative screening analysis suggested potential risks to human health from Hg and Pb and a potential risk to ecological receptors from total effluent, Sb, Cd, Cu, Pb, Ni, Ag, Zn, and phenol in the water column and PAHs in sediment; quantitiative risk assessments are being done for these contaminants.

  12. JLab Scientist Discusses Higgs Announcement (Tampa Bay Online) | Jefferson

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Lab Scientist Discusses Higgs Announcement (Tampa Bay Online) External Link: http://www2.tbo.com/news/opinion/2012/jul/16/naopino1-no-cause-for-envy-in-higgs... By jlab_admin on Mon, 2012-07-16

  13. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  14. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  15. Zinc blende GaAs films grown on wurtzite GaN/sapphire templates

    SciTech Connect (OSTI)

    Chaldyshev, V.V.; Nielsen, B.; Mendez, E.E.; Musikhin, Yu.G.; Bert, N.A.; Ma, Zh.; Holden, Todd

    2005-03-28

    1-{mu}m-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaN/sapphire (0001) templates. In spite of a {approx}20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAs/GaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75-5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.

  16. Princeton Plasma Physics Lab - General Atomics (GA)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http:www.pppl.govnode1132

  17. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  18. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  19. Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

    SciTech Connect (OSTI)

    Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Charlton, T. R.; Kinane, C. J.; Langridge, S.

    2015-08-07

    We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

  20. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect (OSTI)

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  1. SODAR DATA FROM OYSTER BAY AT WINYAH BAY NATIONAL ESTUARINE RESEARCH RESERVE

    SciTech Connect (OSTI)

    Nichols, R.; Kohn, J.; Rigas, N.; Boessneck, E.; Kress, E.; Gayes, P.

    2013-04-29

    The SecondWind Triton® is a SODAR (SOnic Detection And Ranging) sonic wind profiler (Triton® sodar) system capable of profiling the wind characteristics up to 200m above the instrument. SODAR systems transmit acoustic chirps into the atmosphere and measure the backscattered signal returned to the device. The primary source of acoustic scattering is variations in air temperature, which cause changes in the refractive index of sound. By measuring the Doppler-shifted frequency of these returned signals, the Triton® can calculate the wind’s speed and direction for the volume of air above the instrument, measured at ten fixed heights, known as station heights. The Triton® is specifically designed for the purpose of wind energy resource assessment as it can remotely capture wind data at heights above ground where wind turbine rotors operate. The measurements made include horizontal wind speed and direction, vertical wind speed, and turbulence. Other integrated sensors provide time and location via GPS, barometric pressure, humidity, and the tilt of the instrument. The study area is located east of Georgetown, South Carolina in North Inlet - Winyah Bay National Estuarine Research Reserve. The monitoring period for data in this report begins 5/14/2009 9:30:00 AM EST and ends 8/2/2010 11:40:00 AM EST.

  2. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  3. GaP ring-like nanostructures on GaAs (100) with In{sub 0.15}Ga{sub 0.85}As compensation layers

    SciTech Connect (OSTI)

    Prongjit, Patchareewan Pankaow, Naraporn Boonpeng, Poonyasiri Thainoi, Supachok Panyakeow, Somsak Ratanathammaphan, Somchai

    2013-12-04

    We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In{sub 0.15}Ga{sub 0.85}As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In{sub 0.15}Ga{sub 0.85}As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In{sub 0.15}Ga{sub 0.85}As layer thickness.

  4. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  5. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  6. The detector system of the Daya Bay reactor neutrino experiment

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    An, F. P.

    2015-12-15

    The Daya Bay experiment was the first to report simultaneous measurements of reactor antineutrinos at multiple baselines leading to the discovery of ν¯e oscillations over km-baselines. Subsequent data has provided the world's most precise measurement of sin 22θ13 and the effective mass splitting Δm2ee. The experiment is located in Daya Bay, China where the cluster of six nuclear reactors is among the world's most prolific sources of electron antineutrinos. Multiple antineutrino detectors are deployed in three underground water pools at different distances from the reactor cores to search for deviations in the antineutrino rate and energy spectrum due to neutrinomore » mixing. Instrumented with photomultiplier tubes, the water pools serve as shielding against natural radioactivity from the surrounding rock and provide efficient muon tagging. Arrays of resistive plate chambers over the top of each pool provide additional muon detection. The antineutrino detectors were specifically designed for measurements of the antineutrino flux with minimal systematic uncertainty. Relative detector efficiencies between the near and far detectors are known to better than 0.2%. With the unblinding of the final two detectors’ baselines and target masses, a complete description and comparison of the eight antineutrino detectors can now be presented. This study describes the Daya Bay detector systems, consisting of eight antineutrino detectors in three instrumented water pools in three underground halls, and their operation through the first year of eight detector data-taking.« less

  7. Microbial diversity in restored wetlands of San Francisco Bay

    SciTech Connect (OSTI)

    Theroux, Susanna; Hartman, Wyatt; He, Shaomei; Tringe, Susannah

    2013-12-09

    Wetland ecosystems may serve as either a source or a sink for atmospheric carbon and greenhouse gases. This delicate carbon balance is influenced by the activity of belowground microbial communities that return carbon dioxide and methane to the atmosphere. Wetland restoration efforts in the San Francisco Bay-Delta region may help to reverse land subsidence and possibly increase carbon storage in soils. However, the effects of wetland restoration on microbial communities, which mediate soil metabolic activity and carbon cycling, are poorly studied. In an effort to better understand the underlying factors which shape the balance of carbon flux in wetland soils, we targeted the microbial communities in a suite of restored and historic wetlands in the San Francisco Bay-Delta region. Using DNA and RNA sequencing, coupled with greenhouse gas monitoring, we profiled the diversity and metabolic potential of the wetland soil microbial communities along biogeochemical and wetland age gradients. Our results show relationships among geochemical gradients, availability of electron acceptors, and microbial community composition. Our study provides the first genomic glimpse into microbial populations in natural and restored wetlands of the San Francisco Bay-Delta region and provides a valuable benchmark for future studies.

  8. The detector system of the Daya Bay reactor neutrino experiment

    SciTech Connect (OSTI)

    An, F. P.

    2015-12-15

    The Daya Bay experiment was the first to report simultaneous measurements of reactor antineutrinos at multiple baselines leading to the discovery of ν¯e oscillations over km-baselines. Subsequent data has provided the world's most precise measurement of sin 213 and the effective mass splitting Δm2ee. The experiment is located in Daya Bay, China where the cluster of six nuclear reactors is among the world's most prolific sources of electron antineutrinos. Multiple antineutrino detectors are deployed in three underground water pools at different distances from the reactor cores to search for deviations in the antineutrino rate and energy spectrum due to neutrino mixing. Instrumented with photomultiplier tubes, the water pools serve as shielding against natural radioactivity from the surrounding rock and provide efficient muon tagging. Arrays of resistive plate chambers over the top of each pool provide additional muon detection. The antineutrino detectors were specifically designed for measurements of the antineutrino flux with minimal systematic uncertainty. Relative detector efficiencies between the near and far detectors are known to better than 0.2%. With the unblinding of the final two detectors’ baselines and target masses, a complete description and comparison of the eight antineutrino detectors can now be presented. This study describes the Daya Bay detector systems, consisting of eight antineutrino detectors in three instrumented water pools in three underground halls, and their operation through the first year of eight detector data-taking.

  9. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  10. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  11. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  12. Targeting Net Zero Energy at Marine Corps Base Kaneohe Bay, Hawaii:

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Assessment and Recommendations | Department of Energy Targeting Net Zero Energy at Marine Corps Base Kaneohe Bay, Hawaii: Assessment and Recommendations Targeting Net Zero Energy at Marine Corps Base Kaneohe Bay, Hawaii: Assessment and Recommendations NREL performed a comprehensive assessment to appraise the potential of MCBH Kaneohe Bay to achieve net zero energy status through energy efficiency, renewable energy, and electric vehicle integration. This report summarizes the results of the

  13. Computing Sciences Staff Help East Bay High Schoolers Upgrade their Summer

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Computing Sciences Staff Help East Bay High Schoolers Upgrade their Summer Computing Sciences Staff Help East Bay High Schoolers Upgrade their Summer August 6, 2015 Jon Bashor, jbashor@lbl.gov, +1 510 486 5849 To help prepare students from underrepresented groups learn about careers in a variety of IT fields, the Laney College Computer Information Systems Department offered its Upgrade: Computer Science Program. Thirty-eight students from 10 East Bay high schools registered for the eight-week

  14. Inter-Tribal Council of Michigan, Inc. - Bay Mills Indian Community Energy Reduction Feasibility Study

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    --Tribal Council of Michigan, Inc. Environmental Services Division Bay Mills Indian Community Energy Reduc<on Feasibility Study Chris K ushman Thank You *DOE Tribal Energy Program *Tribal Energy Program Review presenters *Bay Mills Indian Community Bay Mills Indian Community * Upper Peninsula of Michigan - Cold temperatures - Prolonged exposure to strong north winds off Lake Superior - Short winter daylight * Fishing and fish consuming community * Electricity largely supplied by coal fired

  15. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect (OSTI)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  16. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  17. Bay Area national labs team to tackle long-standing automotive...

    National Nuclear Security Administration (NNSA)

    Bay Area national labs team to tackle long-standing automotive hydrogen storage challenge ... Light Source facility, is leading the Hydrogen Materials - Advanced Research Consortium ...

  18. Design of a basinwide monitoring program for the Tampa Bay estuary. Final technical pub

    SciTech Connect (OSTI)

    Hochberg, R.J.; Weisberg, S.B.; Frithsen, J.B.

    1992-10-30

    The Tampa Bay National Estuary Program (TBNEP) is developing a Comprehensive Conservation and Management Plan (CCMP) to recommend management actions for protecting the Tampa Bay estuary. The purpose of the document is to facilitate development of the monitoring program by assisting the TBNEP to define the objectives of a monitoring program for Tampa Bay identifying indicators and a sampling design that are appropriate to those objectives, and identifying how existing Tampa Bay monitoring programs can be incorporated and modified (if necessary) to meet the monitoring objectives.

  19. Make Energy at the Bay Area Maker Faire | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Make Energy at the Bay Area Maker Faire Make Energy at the Bay Area Maker Faire June 20, 2016 - 12:10pm Addthis Make Energy at the Bay Area Maker Faire Video from the Department of Energy, published June 17, 2016. This past May, nine Department of Energy (DOE) national labs and three DOE program offices hosted the first Make|ENERGY Pavilion at the Bay Area Maker Faire in San Mateo, California. It featured a number of smart and exciting hands-on displays for kids and adults to explore, and

  20. MHK Projects/San Francisco Bay Tidal Energy Project | Open Energy...

    Open Energy Info (EERE)

    Francisco Bay Tidal Energy Project < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... "minzoom":false,"mappingservice":"googlemaps3",...

  1. Building America Whole-House Solutions for Existing HomesBay...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    HomesBay Ridge Gardens - Mixed Humid Affordable Multifamily Housing Deep Energy Retrofit, ... Ridge Gardens - Mixed Humid Affordable Multifamily Housing Deep Energy Retrofit, ...

  2. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  3. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  4. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  5. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; Worschech, L.; Grutzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  6. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmoreto higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.less

  7. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

    SciTech Connect (OSTI)

    Li, Yi; Liu, Bin E-mail: rzhang@nju.edu.cn; Zhang, Rong E-mail: rzhang@nju.edu.cn; Xie, Zili; Zhuang, Zhe; Dai, JiangPing; Tao, Tao; Zhi, Ting; Zhang, Guogang; Chen, Peng; Ren, Fangfang; Zhao, Hong; Zheng, Youdou

    2015-04-21

    Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620?nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%53% as compared to that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.

  8. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect (OSTI)

    Lekhal, K.; Damilano, B. De Mierry, P.; Venngus, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570600?nm) emitting In{sub x}Ga{sub 1?x}N/Al{sub y}Ga{sub 1?y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1?x}N QWs by the Al{sub y}Ga{sub 1?y}N layers, respectively.

  9. Chedabucto Bay 1992 shoreline oil conditions survey: Long-term fate of bunker C oil from the arrow spill in Chedabucto Bay, Nova Scotia

    SciTech Connect (OSTI)

    Owens, E.H.; McGuire, B.E.; Humphrey, B.

    1994-03-01

    The report presents a description of the activities related to and a summary of the information generated by a field survey carried out in Chedabucto Bay, Nova Scotia, for Environment Canada from June to September 1992. The objective of the survey was to locate and document any residual oil on the shores of Chedabucto Bay. The grounding of the tanker Arrow in February 1970 resulted in the release of more than 11 million liters of Bunker C fuel oil. This oil was stranded over an estimated 305 km of shoreline in the Chedabucto Bay area.

  10. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M.; Giddings, A. D.; Prosa, T. J.; Larson, D. J.; Mano, T.

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  11. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  12. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgl Okur; Akdemir, Hande Gnay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  13. On-sun concentrator performance of GaInP/GaAs tandem cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Sinha, K.; McMahon, W.E.; Olson, J.M.

    1996-05-01

    The GaInP/GaAs concentrator device has been adapted for and tested in a prototype {open_quotes}real-world{close_quotes} concentrator power system. The device achieved an on-sun efficiency of 28% {+-} 1% in the range of approximately 200-260 suns with device operating temperatures of 38{degrees}C to 42{degrees}C. The authors discuss ways of further improving this performance for future devices.

  14. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  15. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Hajłasz, M.; Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S.; Gravesteijn, D. J.; Rietveld, F. J. R.; Schmitz, J.

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  16. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  17. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  18. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  19. Key Neutrino behavior observed at Daya Bay (The College of William and

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mary) | Jefferson Lab Key Neutrino behavior observed at Daya Bay (The College of William and Mary) External Link: http://www.wm.edu/news/stories/2012/key-neutrino-behavior-observed-at-daya-bay-1... By jlab_admin on Thu, 2012-03-08

  20. ESnet, Orange Silicon Valley, and Bay Microsystems Demonstrate the

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    World's First Long Distance 40Gbps RDMA Data Transfer ESnet, Orange Silicon Valley, and Bay Microsystems Demonstrate the World's First Long Distance 40Gbps RDMA Data Transfer News & Publications ESnet News Media & Press Publications and Presentations Galleries ESnet Awards and Honors Contact Us Media Jon Bashor, jbashor@lbl.gov, +1 510 486 5849 or Media@es.net Technical Assistance: 1 800-33-ESnet (Inside the US) 1 800-333-7638 (Inside the US) 1 510-486-7600 (Globally) 1 510-486-7607

  1. The Muon System of the Daya Bay Reactor Antineutrino Experiment

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    An, F. P.; Hackenburg, R. W.; Brown, R. E.; Chasman, C.; Dale, E.; Diwan, M. V.; Gill, R.; Hans, S.; Isvan, Z.; Jaffe, D. E.; et al

    2014-10-05

    The Daya Bay experiment consists of functionally identical antineutrino detectors immersed in pools of ultrapure water in three well-separated underground experimental halls near two nuclear reactor complexes. These pools serve both as shields against natural, low-energy radiation, and as water Cherenkov detectors that efficiently detect cosmic muons using arrays of photomultiplier tubes. Each pool is covered by a plane of resistive plate chambers as an additional means of detecting muons. Design, construction, operation, and performance of these muon detectors are described. (auth)

  2. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  3. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

    SciTech Connect (OSTI)

    Ji, Hai-Ming; Liang, Baolai Simmonds, Paul J.; Juang, Bor-Chau; Yang, Tao; Young, Robert J.; Huffaker, Diana L.

    2015-03-09

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

  4. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  5. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; et al

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersionmore » observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

  6. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper; Reedy, Robert

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  7. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  8. Microbial diversity and carbon cycling in San Francisco Bay wetlands

    SciTech Connect (OSTI)

    Theroux, Susanna; Hartman, Wyatt; He, Shaomei; Tringe, Susannah

    2014-03-21

    Wetland restoration efforts in San Francisco Bay aim to rebuild habitat for endangered species and provide an effective carbon storage solution, reversing land subsidence caused by a century of industrial and agricultural development. However, the benefits of carbon sequestration may be negated by increased methane production in newly constructed wetlands, making these wetlands net greenhouse gas (GHG) sources to the atmosphere. We investigated the effects of wetland restoration on below-ground microbial communities responsible for GHG cycling in a suite of historic and restored wetlands in SF Bay. Using DNA and RNA sequencing, coupled with real-time GHG monitoring, we profiled the diversity and metabolic potential of wetland soil microbial communities. The wetland soils harbor diverse communities of bacteria and archaea whose membership varies with sampling location, proximity to plant roots and sampling depth. Our results also highlight the dramatic differences in GHG production between historic and restored wetlands and allow us to link microbial community composition and GHG cycling with key environmental variables including salinity, soil carbon and plant species.

  9. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  10. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  11. Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

    SciTech Connect (OSTI)

    Mohan, Nagaboopathy; Raghavan, Srinivasan; Manikant,; Soman, Rohith

    2015-10-07

    AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 × 10{sup 9}/cm{sup 2} and <1 nm surface roughness. The 2-D electron gas channels formed at an AlGaN-1 nm AlN/GaN interface deposited on this GaN probe layer all have mobilities of 1600–1900 cm{sup 2}/V s at a carrier concentration of 0.7–0.9 × 10{sup 13}/cm{sup 2}. Compressive stress and changes in composition in GaN rich regions of the AlN-GaN transition are the most effective at reducing dislocation density. Amongst all the transitions studied the step graded transition is the one that helps to implement this feature of GaN integration in the simplest and most consistent manner.

  12. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  13. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  14. Electrical compensation by Ga vacancies in Ga{sub 2}O{sub 3} thin films

    SciTech Connect (OSTI)

    Korhonen, E.; Tuomisto, F.; Gogova, D.; Wagner, G.; Baldini, M.; Galazka, Z.; Schewski, R.; Albrecht, M.

    2015-06-15

    The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga{sub 2}O{sub 3} thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga{sub 2}O{sub 3} thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In{sub 2}O{sub 3}, where recent results show that n-type conductivity is not limited by cation vacancies but by other intrinsic defects such as O{sub i}.

  15. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli; Wang, Jianfeng; Ren, Guoqiang; Xu, Ke

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  16. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  17. Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn

    SciTech Connect (OSTI)

    Plankina, S. M.; Vikhrova, O. V.; Danilov, Yu. A.; Zvonkov, B. N.; Kalentyeva, I. L.; Nezhdanov, A. V.; Chunin, I. I.; Yunin, P. A.

    2015-01-15

    The results of complex studies of InGaAs/GaAs nanoheterostructures δ-doped with Mn are reported. The structures are grown by metal-organic vapor-phase epitaxy in combination with laser deposition. By confocal Raman spectroscopy, it is shown that the low-temperature δ-doped GaAs cap layers are of higher crystal quality compared to uniformly doped layers. Scattering of light in the coupled phonon-plasmon mode is observed. The appearance of this mode is conditioned by the diffusion of manganese from the δ-layer. The thickness of the cap layer is found to be d{sub c} ≈ 9–20 nm, optimal for attainment of the highest photoluminescence intensity of the quantum well and the highest layer concentration of holes by doping with manganese.

  18. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  19. Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

    SciTech Connect (OSTI)

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-09-27

    The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C{sub J}). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n-type and p-type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C{sub J} has shown that GaAs 311B limits the formation of N-H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

  20. Refractive index of erbium doped GaN thin films

    SciTech Connect (OSTI)

    Alajlouni, S.; Sun, Z. Y.; Li, J.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M.

    2014-08-25

    GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540 nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300 arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers and represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540 nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.

  1. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  2. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  3. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Young, M. P.; Woodhead, C. S.; Roberts, J.; Noori, Y. J.; Noble, M. T.; Krier, A.; Hayne, M.; Young, R. J.; Smakman, E. P.; Koenraad, P. M.

    2014-11-15

    We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 ?eV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

  4. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. ); Koploy, M.A. )

    1992-01-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  5. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J.; Koploy, M.A.

    1992-08-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  6. Make Energy at The Bay Area Maker Faire | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Make Energy at The Bay Area Maker Faire Make Energy at The Bay Area Maker Faire Addthis Representatives from the Department of Energy's National Labs, the Office of Energy Efficiency and Renewable Energy (EERE), the Advanced Research Projects Agency (ARPA-E) and the Office of Technology Transitions (OTT) were on hand at the first-ever Make | ENERGY Pavilion at the Bay Area Maker Faire May 20-22, 2016, at the San Mateo County Event Center. Watch this video to learn more

  7. DOE - Office of Legacy Management -- W R Grace Co - Curtis Bay - MD 01

    Office of Legacy Management (LM)

    Co - Curtis Bay - MD 01 FUSRAP Considered Sites W.R. Grace Co., MD Alternate Name(s): W.R. Grace Rare Earths, Inc. Davison Chemical Division Curtis Bay Plant MD.01-2 MD.01-3 Location: Curtis Bay, Baltimore, Maryland MD.01-2 Historical Operations: Conducted developmental research and thorium extraction from monazite ore for AEC. MD.01-6 Eligibility Determination: Eligible MD.01-2 Radiological Survey(s): Assessment Surveys MD.01-3 MD.01-4 MD.01-5 MD.01-6 Site Status: Cleanup in progress by U.S.

  8. GaP/Si heterojunction Solar Cells

    SciTech Connect (OSTI)

    Saive, R.; Chen, C.; Emmer, H.; Atwater, H.

    2015-05-11

    Improving the efficiency of solar cells requires the introduction of novel device concepts. Recent developments have shown that in Si solar cell technology there is still room for tremendous improvement. Using the heterojunction with intrinsic thin layer (HIT) approach 25.6 % power conversion efficiency was achieved. However, a-Si as a window and passivation layer comes with disadvantages as a-Si shows low conductivity and high parasitic absorption. Therefore, it is likely that using a crystalline material as window layer with high band gab and high mobility can further improve efficiency. We have studied GaP grown by MOCVD on Si with (001) and (112) orientation. We obtained crystalline layers with carrier mobility around 100 cm2/Vs and which passivate Si as confirmed by carrier lifetime measurements. We performed band alignment studies by X-ray photoelectron spectroscopy yielding a valence band offset of 0.3 eV. Comparing this value with the Schottky-model leads to an interface dipole of 0.59 eV. The open circuit voltage increases with increasing doping and is consistent with the theoretical open circuit voltage deduced from work function difference and interface dipole. We obtain an open circuit voltage of 0.38 V for n-doped GaP with doping levels in the order of 10^17 1/cm^3. In our next steps we will increase the doping level further in order to gain higher open circuit voltage. We will discuss the implications of these findings for GaP/Si heterojunction solar cells.

  9. Development of a Hydrodynamic and Transport model of Bellingham Bay in Support of Nearshore Habitat Restoration

    SciTech Connect (OSTI)

    Wang, Taiping; Yang, Zhaoqing; Khangaonkar, Tarang

    2010-04-22

    In this study, a hydrodynamic model based on the unstructured-grid finite volume coastal ocean model (FVCOM) was developed for Bellingham Bay, Washington. The model simulates water surface elevation, velocity, temperature, and salinity in a three-dimensional domain that covers the entire Bellingham Bay and adjacent water bodies, including Lummi Bay, Samish Bay, Padilla Bay, and Rosario Strait. The model was developed using Pacific Northwest National Laboratorys high-resolution Puget Sound and Northwest Straits circulation and transport model. A sub-model grid for Bellingham Bay and adjacent coastal waters was extracted from the Puget Sound model and refined in Bellingham Bay using bathymetric light detection and ranging (LIDAR) and river channel cross-section data. The model uses tides, river inflows, and meteorological inputs to predict water surface elevations, currents, salinity, and temperature. A tidal open boundary condition was specified using standard National Oceanic and Atmospheric Administration (NOAA) predictions. Temperature and salinity open boundary conditions were specified based on observed data. Meteorological forcing (wind, solar radiation, and net surface heat flux) was obtained from NOAA real observations and National Center for Environmental Prediction North American Regional Analysis outputs. The model was run in parallel with 48 cores using a time step of 2.5 seconds. It took 18 hours of cpu time to complete 26 days of simulation. The model was calibrated with oceanographic field data for the period of 6/1/2009 to 6/26/2009. These data were collected specifically for the purpose of model development and calibration. They include time series of water-surface elevation, currents, temperature, and salinity as well as temperature and salinity profiles during instrument deployment and retrieval. Comparisons between model predictions and field observations show an overall reasonable agreement in both temporal and spatial scales. Comparisons of

  10. Little Traverse Bay Bands of Odawa Indians- 2005 Project

    Broader source: Energy.gov [DOE]

    The Little Traverse Bay Bands of Odawa Indians is located in the northern part of lower Michigan on approximately 590 acres of land. The tribe originally had no consistent vision or strategic plan concerning its energy use. This project had three objectives. The first objective was to produce a comprehensive energy plan for the tribe. The second objective was to create an energy organization and tribal energy code. The third objective was to increase the capacity of the tribe for better understanding (through active tribal participation), capability, knowledge and awareness of energy issues through bimonthly articles in the tribal newsletter and two energy workshops. The vision, strategic plan, and code will provide the focus, direction and guidelines as the tribe seeks to develop renewable energy and energy efficiency.

  11. Distributed bragg reflector using AIGaN/GaN

    DOE Patents [OSTI]

    Waldrip, Karen E.; Lee, Stephen R.; Han, Jung

    2004-08-10

    A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

  12. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  13. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  14. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    SciTech Connect (OSTI)

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  15. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  16. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  17. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  18. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19 }m{sup −2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  19. fe0013961-GaTech | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Performer Georgia Tech Research Corporation, Atlanta GA 30332 Background While earlier research focused on the properties of the hydrate mass per se (Sloan Jr and Koh 2007), ...

  20. Photoluminescence from GaAs nanodisks fabricated by using combination...

    Office of Scientific and Technical Information (OSTI)

    GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth Citation Details In-Document Search Title:...

  1. Atomic structure of defects in GaN:Mg grown with Ga polarity

    SciTech Connect (OSTI)

    Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J.; O'Keefe, M.A.; Hautakangas, S.; Laakso, A.; Saarinen, K.

    2003-11-25

    Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {l_brace}11{und 2}3{r_brace} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 {+-} 0.2{angstrom} displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base.

  2. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  3. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  4. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  5. MHK Projects/OpenHydro Bay of Fundy Nova Scotia CA | Open Energy...

    Open Energy Info (EERE)

    Phase Phase 1 Project Details OpenHydro is working with Canadian utility Nova Scotia Power to create a tidal demonstration project in the Bay of Fundy. Following successful...

  6. Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

    SciTech Connect (OSTI)

    Kasanaboina, Pavan Kumar; Ahmad, Estiak; Li, Jia; Iyer, Shanthi; Reynolds, C. Lewis; Liu, Yang

    2015-09-07

    Bandgap tuning up to 1.3 μm in GaAsSb based nanowires by incorporation of dilute amount of N is reported. Highly vertical GaAs/GaAsSbN/GaAs core-shell configured nanowires were grown for different N contents on Si (111) substrates using plasma assisted molecular beam epitaxy. X-ray diffraction analysis revealed close lattice matching of GaAsSbN with GaAs. Micro-photoluminescence (μ-PL) revealed red shift as well as broadening of the spectra attesting to N incorporation in the nanowires. Replication of the 4K PL spectra for several different single nanowires compared to the corresponding nanowire array suggests good compositional homogeneity amongst the nanowires. A large red shift of the Raman spectrum and associated symmetric line shape in these nanowires have been attributed to phonon localization at point defects. Transmission electron microscopy reveals the dominance of stacking faults and twins in these nanowires. The lower strain present in these dilute nitride nanowires, as opposed to GaAsSb nanowires having the same PL emission wavelength, and the observation of room temperature PL demonstrate the advantage of the dilute nitride system offers in the nanowire configuration, providing a pathway for realizing nanoscale optoelectronic devices in the telecommunication wavelength region.

  7. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  8. Comprehensive characterization report on Winter Quarters Bay, McMurdo Station, Antarctica

    SciTech Connect (OSTI)

    Crockett, A.B.; White, G.J.

    1997-01-01

    Winter Quarters Bay is a small embayment located adjacent to the United States largest base in Antarctica, McMurdo Station. McMurdo Station, which is managed by the National Science Foundation`s Office of Polar Programs, was constructed in 1955, has been in constant use since that time, and has a population of about 1,000 persons during the summer and about 250 people for the winter. The bay offers shelter for ships and an ice dock is used during January and February to off load fuel and cargo. During earlier times, trash from the McMurdo Station was piled on the steep shoreline of the bay, doused with several thousand gallons of fuel and ignited. That practice has ceased and the site has been regraded to cover the waste. The bottom of the bay is littered with drums, equipment, tanks, tires, all sorts of metal objects, cables, etc., especially the southeastern side where dumping took place. The sediments are gravel in some places yet fine and fluid at other sites with coarse particles intermixed. The original benthic community is not well recorded but significant ecological changes have occurred. Sediments are contaminated with PCBs, metals, and hydrocarbon fuels. This report summarizes available information on Winter Quarters Bay and was originally intended to be used by workshop participants to become familiar with the bay prior to becoming updated with unpublished data by various Antarctic investigators. The proposed workshop was to assist the National Science Foundation in determining whether and how the bay should be remediated and to develop an integrated research plan if additional data were needed. However, plans changed, the workshop was never conducted, but the briefing report was prepared. Most of this report reviews and summarizes other published data. The only new data are those from the Idaho National Engineering and Environmental Laboratory`s investigation into the distribution of organic contaminants in the bay and sediment toxicity testing.

  9. BayeSED: A GENERAL APPROACH TO FITTING THE SPECTRAL ENERGY DISTRIBUTION OF GALAXIES

    SciTech Connect (OSTI)

    Han, Yunkun; Han, Zhanwen E-mail: zhanwenhan@ynao.ac.cn

    2014-11-01

    We present a newly developed version of BayeSED, a general Bayesian approach to the spectral energy distribution (SED) fitting of galaxies. The new BayeSED code has been systematically tested on a mock sample of galaxies. The comparison between the estimated and input values of the parameters shows that BayeSED can recover the physical parameters of galaxies reasonably well. We then applied BayeSED to interpret the SEDs of a large K{sub s} -selected sample of galaxies in the COSMOS/UltraVISTA field with stellar population synthesis models. Using the new BayeSED code, a Bayesian model comparison of stellar population synthesis models has been performed for the first time. We found that the 2003 model by Bruzual and Charlot, statistically speaking, has greater Bayesian evidence than the 2005 model by Maraston for the K{sub s} -selected sample. In addition, while setting the stellar metallicity as a free parameter obviously increases the Bayesian evidence of both models, varying the initial mass function has a notable effect only on the Maraston model. Meanwhile, the physical parameters estimated with BayeSED are found to be generally consistent with those obtained using the popular grid-based FAST code, while the former parameters exhibit more natural distributions. Based on the estimated physical parameters of the galaxies in the sample, we qualitatively classified the galaxies in the sample into five populations that may represent galaxies at different evolution stages or in different environments. We conclude that BayeSED could be a reliable and powerful tool for investigating the formation and evolution of galaxies from the rich multi-wavelength observations currently available. A binary version of the BayeSED code parallelized with Message Passing Interface is publicly available at https://bitbucket.org/hanyk/bayesed.

  10. Energy Secretary Steven Chu to Travel to Bay Area to Highlight State of the

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Union Address, Commitment to Clean Energy | Department of Energy Bay Area to Highlight State of the Union Address, Commitment to Clean Energy Energy Secretary Steven Chu to Travel to Bay Area to Highlight State of the Union Address, Commitment to Clean Energy January 31, 2012 - 7:38pm Addthis Washington, D.C. - As part of the Energy Department's ongoing efforts to highlight President Obama's State of the Union address and discuss the Obama Administration's commitment to American energy

  11. Building America Whole-House Solutions for Existing HomesBay Ridge Gardens

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    - Mixed Humid Affordable Multifamily Housing Deep Energy Retrofit, Annapolis, Maryland (Fact Sheet) | Department of Energy HomesBay Ridge Gardens - Mixed Humid Affordable Multifamily Housing Deep Energy Retrofit, Annapolis, Maryland (Fact Sheet) Building America Whole-House Solutions for Existing HomesBay Ridge Gardens - Mixed Humid Affordable Multifamily Housing Deep Energy Retrofit, Annapolis, Maryland (Fact Sheet) Approximately 43% energy savings are achieved in a 1970s multifamily

  12. Importance of Carolina Bays to the Avifauna of Pinelands in the Southeastern United States.

    SciTech Connect (OSTI)

    Czapka, Stephen, J.; Kilgo, John, C.

    2011-07-01

    Abstract - Past anthropogenic activity has led to the destruction or alteration of Carolina bay wetlands throughout the southeastern United States. Presently, urban development, combined with a 2001 ruling by the US Supreme Court relaxing protection of isolated wetlands, poses an increasing threat to these and other isolated wetland systems; however, little information exists on the importance of these wetland systems to birds. We compared breeding and wintering bird communities of upland pine (Pinus spp.) forests with and without Carolina bays. Estimated species richness was greater in pine forests with Carolina bays than without during the winter (31.7 ± 1.3 [mean ± SE] vs. 26.9 ± 1.2; P = 0.027), but not in the breeding season (27.9 ± 2.2 vs. 26.3 ± 2.2; P = 0.644). Total relative abundance did not differ between pine forests with Carolina bays and those without in either the breeding (148.0 ± 16.0 vs. 129.4 ± 10.4 birds/40 ha; P = 0.675) or winter (253.0 ± 36.4 vs. 148.8 ± 15.1 birds/40 ha; P = 0.100) seasons. However, 23 species, 43% of which were wetland-dependent, were observed only in pine forests with bays during the breeding season, and 20 species, 30% of which were wetland-dependent, were observed only in such sites during winter. In contrast, only 6 and 1 species were observed only in pine forests without bays during the breeding and winter seasons, respectively, indicating that few species were negatively affected by the presence of bays. Thus, Carolina bays appear to enrich the avifauna of pine forests in the southeastern United States.

  13. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  14. Northampton County, Pennsylvania: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    Bangor, Pennsylvania Bath, Pennsylvania Belfast, Pennsylvania Bethlehem, Pennsylvania Chapman, Pennsylvania East Bangor, Pennsylvania Eastlawn Gardens, Pennsylvania Easton,...

  15. Evaluation of 1991-1992 Brood Overwinter-Reared Coho Released from Net Pens in Youngs Bay, Oregon : Final Completion Report Youngs Bay Terminal Fishery Project.

    SciTech Connect (OSTI)

    Hirose, Paul S.

    1997-01-01

    Funding from Bonneville Power Administration was provided to the Oregon Department of Fish and Wildlife and the Clatsop County Economic Development Council`s Fisheries Project to identify and develop terminal fishing opportunities. The 1991 and 1992 brood fingerling coho from Oregon Department of Fish and Wildlife hatcheries were successfully reared during the winter period to smolt stage in Youngs Bay utilizing floating net pens. Based on coded-wire-tag recoveries during 1991--93 from 2-week net-pen acclimation releases, total accountability of coho adults averaged 40,540 fish, with the Youngs Bay commercial harvest accounting for 39%. With reduced ocean harvest impacts during 1994 and 1995, 92% of 51,640 coho in 1994 and 68% of 23,599 coho in 1995 (based on coded-wire-tag recoveries) were accounted for in the Youngs Bay commercial fishery for combined 2-week and overwinter acclimation net-pen releases. Overwinter net-pen acclimation coho accounted for 35,063 and 15,775 coho adults in 1994 and 1995 with 93% and 68% accountable in the Youngs Bay commercial harvest. Based on coded-wire-tag recoveries, less than 1% of the adults resulting from releases at Youngs Bay net pens strayed to hatcheries, while none were recovered on spawning ground surveys during 1991--95. The highest survival rates were observed for 1991 and 1992 brood overwinter coho released in early May. Time of release, not rearing strategy, appears to be the determining factor affecting survival in Youngs Bay.

  16. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F. Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Kryzhanovskaya, N. V.; Synitsin, M. A.; Sizov, V. S.; Zakgeim, A. L.; Mizerov, M. N.

    2010-06-15

    A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue and yellow-green spectral ranges. The optical properties of structures of this kind have been studied, and it is demonstrated that the use of such a superlattice makes it possible to obtain effective emission from the active region.

  17. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N. E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M. E-mail: Martin.Kuball@bristol.ac.uk; Paskova, T.; Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 ; Evans, K. R.; Leach, J.; Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 ; Li, X.; Özgür, Ü.; Morkoç, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  18. Hardwood re-sprout control in hydrologically restored Carolina Bay depression wetlands.

    SciTech Connect (OSTI)

    Moser, Lee, Justin

    2009-06-01

    Carolina bays are isolated depression wetlands located in the upper coastal plain region of the eastern Unites States. Disturbance of this wetland type has been widespread, and many sites contain one or more drainage ditches as a result of agricultural conversion. Restoration of bays is of interest because they are important habitats for rare flora and fauna species. Previous bay restoration projects have identified woody competitors in the seedbank and re-sprouting as impediments to the establishment of herbaceous wetland vegetation communities. Three bays were hydrologically restored on the Savannah River Site, SC, by plugging drainage ditches. Residual pine/hardwood stands within the bays were harvested and the vegetative response of the seedbank to the hydrologic change was monitored. A foliar herbicide approved for use in wetlands (Habitat® (Isopropylamine salt of Imazapyr)) was applied on one-half of each bay to control red maple (Acer rubrum L.), sweet gum (Liquidambar styraciflua L.), and water oak (Quercus nigra L.) sprouting. The effectiveness of the foliar herbicide was tested across a hydrologic gradient in an effort to better understand the relationship between depth and duration of flooding, the intensity of hardwood re-sprout pressure, and the need for hardwood management practices such as herbicide application.

  19. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  20. Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.01.2??m due to increased charge carrier's localization

    SciTech Connect (OSTI)

    Kryzhkov, D. I. Yablonsky, A. N.; Morozov, S. V.; Aleshkin, V. Ya.; Krasilnik, Z. F.; Zvonkov, B. N.; Vikhrova, O. V.

    2014-11-28

    In this work, a study of the photoluminescence (PL) temperature dependence in quantum well GaAs/GaAsSb and double quantum well InGaAs/GaAsSb/GaAs heterostructures grown by metalorganic chemical vapor deposition with different parameters of GaAsSb and InGaAs layers has been performed. It has been demonstrated that in double quantum well InGaAs/GaAsSb/GaAs heterostructures, a significant shift of the PL peak to a longer-wavelength region (up to 1.2??m) and a considerable reduction in the PL thermal quenching in comparison with GaAs/GaAsSb structures can be obtained due to better localization of charge carriers in the double quantum well. For InGaAs/GaAsSb/GaAs heterostructures, an additional channel of radiative recombination with participation of the excited energy states in the quantum well, competing with the main ground-state radiative transition, has been revealed.

  1. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  2. Ultrafast dynamics of type-II GaSb/GaAs quantum dots

    SciTech Connect (OSTI)

    Komolibus, K.; Piwonski, T.; Gradkowski, K.; Reyner, C. J.; Liang, B.; Huffaker, D. L.; Huyet, G.; Houlihan, J.

    2015-01-19

    In this paper, room temperature two-colour pump-probe spectroscopy is employed to study ultrafast carrier dynamics in type-II GaSb/GaAs quantum dots. Our results demonstrate a strong dependency of carrier capture/escape processes on applied reverse bias voltage, probing wavelength and number of injected carriers. The extracted timescales as a function of both forward and reverse bias may provide important information for the design of efficient solar cells and quantum dot memories based on this material. The first few picoseconds of the dynamics reveal a complex behaviour with an interesting feature, which does not appear in devices based on type-I materials, and hence is linked to the unique carrier capture/escape processes possible in type-II structures.

  3. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-μm transport was observed within an electron spin lifetime of 1.2 ns at room temperature when using an in-plane electric field of 1.75 kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  4. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali Goswami, Srijit Ghosh, Arindam; Baenninger, Matthias; Farrer, Ian; Ritchie, David A.; Tripathi, Vikram; Pepper, Michael

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  5. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  6. Raman spectroscopy of GaP/GaNP core/shell nanowires

    SciTech Connect (OSTI)

    Dobrovolsky, A.; Chen, W. M.; Buyanova, I. A.; Sukrittanon, S.; Kuang, Y. J.; Tu, C. W.

    2014-11-10

    Raman spectroscopy is employed to characterize structural and phonon properties of GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates. According to polarization-dependent measurements performed on single NWs, the dominant Raman modes associated with zone-center optical phonons obey selection rules in a zinc-blende lattice, confirming high crystalline quality of the NWs. Two additional modes at 360 and 397 cm{sup −1} that are specific to the NW architecture are also detected in resonant Raman spectra and are attributed to defect-activated scattering involving zone-edge transverse optical phonons and surface optical phonons, respectively. It is concluded that the formation of the involved defect states are mainly promoted during the NW growth with a high V/III ratio.

  7. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  8. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  9. 11,23,1,1,,19,10,"BANGOR HYDRO ELECTRIC CO","ELLSWORTH",0,,50159...

    U.S. Energy Information Administration (EIA) Indexed Site

    ...37,62904,209135,8219,9,03989,"BIT","ST" 84,08,5,1,,525,30,"COLORADO SPRINGS(CITY OF)","TESLA",0,,0,0,"M",497,"A",,97,0,0,0,0,0,0,0,0,0,1669,0,0,6093,0,0,8686,0,0,12061,0,0,5822,0,0...

  10. 11,23,1,1,,19,10,"BANGOR HYDRO ELECTRIC CO","ELLSWORTH",0,,50159...

    U.S. Energy Information Administration (EIA) Indexed Site

    ...2,11299,99999999,8219,9,03989,"NG","GT" 84,08,5,1,,525,30,"COLORADO SPRINGS(CITY OF)","TESLA",0,,0,0,"M",98,,,1999,1900,0,99999999,2307,0,99999999,2090,0,99999999,1845,0,99999999,4...