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Sample records for bay ga bangor

  1. Naval submarine base Kings Bay and Bangor soil evaluations.

    SciTech Connect (OSTI)

    Holcomb, David Joseph; Patteson, Raymond; Wesenberg, Donald L.; Attaway, Stephen W.

    2004-08-01

    This report provides soil evaluation and characterization testing for the submarine bases at Kings Bay, Georgia, and Bangor, Washington, using triaxial testing at high confining pressures with different moisture contents. In general, the samples from the Bangor and Kings Bay sites appeared to be stronger than a previously used reference soil. Assuming the samples of the material were representative of the material found at the sites, they should be adequate for use in the planned construction. Since soils can vary greatly over even a small site, a soil specification for the construction contractor would be needed to insure that soil variations found at the site would meet or exceed the requirements. A suggested specification for the Bangor and Kings Bay soils was presented based on information gathered from references plus data obtained from this study, which could be used as a basis for design by the construction contractor.

  2. STUDY PSYCHOLOGY IN THE UK WITH BANGOR UNIVERSITY

    E-Print Network [OSTI]

    Po, Lai-Man

    STUDY PSYCHOLOGY IN THE UK WITH BANGOR UNIVERSITY Bangor University was established in 1884 and has by train. Seven reasons to choose Bangor Psychology · In the 2014 National Student Survey we're ranked · Ranked in the Global top 100 Psychology departments by the 2013 QS World University Rankings, giving your

  3. PP-89-1 Bangor Hydro-Electric Company | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PP-89-1 Bangor Hydro-Electric Company PP-89-1 Bangor Hydro-Electric Company Presidental permit authorizing Bangor Hydro-Electric Company to construc, operate and maintain electric...

  4. EIS-0166: Bangor Hydro-Electric Transmission Line, Maine

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Department of Energy prepared this environmental impact statement while considering whether to authorize a Presidential permit for Bangor Hydro to construct a new electric transmission facility at the U.S. border with Canada.

  5. PP-89 Bangor-Electric Company | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergy AEnergyPresidential Permit authorizing RioTheBangor-Electric Company to

  6. Bangor Hydro-Electric Co | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowaWisconsin: EnergyYorkColorado State OfficeBaileyBandgapWorld BankBangor

  7. PP-89 Bangor

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on DeliciousMathematicsEnergyInterested PartiesBuilding energy codes have a moreINCREASES5-246 Bonneville64770793A

  8. CX-007090: Categorical Exclusion Determination

    Office of Energy Efficiency and Renewable Energy (EERE)

    United States Navy Security System UpgradesCX(s) Applied: B1.15, B2.2Date: 05/24/2011Location(s): Albuquerque, NM; Kings Bay, GA; Bangor, WA, Georgia, New Mexico, WashingtonOffice(s): NNSA-Headquarters, Sandia Site Office

  9. Empirical Bayes Linear Models

    E-Print Network [OSTI]

    Penny, Will

    Empirical Bayes Will Penny Linear Models fMRI analysis Gradient Ascent Online learning Delta Rule Maximum Likelihood Augmented Form ReML Objective Function References Empirical Bayes Will Penny 3rd March 2011 #12;Empirical Bayes Will Penny Linear Models fMRI analysis Gradient Ascent Online learning Delta

  10. San Diego Bay Bibliography

    E-Print Network [OSTI]

    Brueggeman, Peter

    1994-01-01

    A in: Final EIR, Proposed Shipyard Expansion Project forfrom Southwest Marine Shipyard #4 in San Diego Bay. Toxscan,Florida. Final EIR, Proposed Shipyard Expansion Project for

  11. Bayesian Model Bayes rule for

    E-Print Network [OSTI]

    Penny, Will

    Bayesian Model Comparison Will Penny Bayes rule for models Bayes factors Nonlinear Models Model Comparison Will Penny June 2nd 2011 #12;Bayesian Model Comparison Will Penny Bayes rule for models and the denominator is given by p(y) = m p(y|m )p(m ) #12;Bayesian Model Comparison Will Penny Bayes rule for models

  12. Biofuels development in Maine: Using trees to oil the wheels of sustainability -Maine news, sports, obituaries, weather -Bangor Daily News http://bangordailynews.com/2013/03/12/opinion/biofuels-development-in-maine-using-trees-to-oil-the-wheels-of-sustain

    E-Print Network [OSTI]

    Thomas, Andrew

    Biofuels development in Maine: Using trees to oil the wheels of sustainability - Maine news, sports, obituaries, weather - Bangor Daily News http://bangordailynews.com/2013/03/12/opinion/biofuels-development-in-maine-using-trees-to-oil-the-wheels-of-sustainability/print/[3/13/2013 1:54:43 PM] Biofuels development

  13. San Diego Bay Bibliography

    E-Print Network [OSTI]

    Brueggeman, Peter

    1994-01-01

    South Bay Power Plant, San Diego, California. Woodward-Station B Power Plant in San Diego, California, operated byPower Plant Receiving Water Monitoring Program. Prepared for the California

  14. Elliott Bay Scholarship 

    E-Print Network [OSTI]

    Unknown

    2011-08-17

    A SIMULATION MODEL OF BROWN SHRIMP (Penaeus aztecus Ives) GROWTH, MOVEMENT, AND SURVIVAL IN GALVESTON BAY, TEXAS A Thesis by LEROY CONRAD GEORGE Submitted to the Graduate College of Texas A&M University in partial fulfillment... of the requirement for the degree of MASTER OF SCIENCE December 1981 Major Subject: Wildlife and Fisheries Sciences A SINOIAFION NODHD OF BROHH SHRINP IP* I* I ) GROWTH, MOVEMENT, AND SURVIVAL IN GALVESTON BAY, TEXAS A Thesis by LEROY CONRAD GEORGE...

  15. Module bay with directed flow

    SciTech Connect (OSTI)

    Torczynski, John R. (Albuquerque, NM)

    2001-02-27

    A module bay requires less cleanroom airflow. A shaped gas inlet passage can allow cleanroom air into the module bay with flow velocity preferentially directed toward contaminant rich portions of a processing module in the module bay. Preferential gas flow direction can more efficiently purge contaminants from appropriate portions of the module bay, allowing a reduced cleanroom air flow rate for contaminant removal. A shelf extending from an air inlet slit in one wall of a module bay can direct air flowing therethrough toward contaminant-rich portions of the module bay, such as a junction between a lid and base of a processing module.

  16. Exploring Hydrodynamic Modeling of Texas Bays With focus on Corpus Christi Bay & Lavaca Bay 

    E-Print Network [OSTI]

    Furnans, Jordan

    2004-01-01

    , although likely affected by tides, is from Oso Bay into Corpus Christi Bay. This is because of the power plant located inbetween Oso Bay and Laguna Madre. This plant withdraws cooling water from Laguna Madre in discharges it into Oso Bay. This water... leading to the hypoxia. In order to develop such a model, much environmental and spatial data needed to be collected. This data includes information on regional wind patterns, tidal data, river inflow data, and weather data. It also was necessary...

  17. Empirical Bayes Linear Models

    E-Print Network [OSTI]

    Penny, Will

    , Sw ) S-1 w = XT C-1 y X + C-1 w mw = Sw (XT C-1 y y + C-1 w µw ) #12;Empirical Bayes Will Penny | |Sw | where is a vector of hyperparameters that parameterise the covariances Cw and Cy

  18. Mercury bioaccumulation in Lavaca Bay, Texas 

    E-Print Network [OSTI]

    Palmer, Sally Jo

    1992-01-01

    estuary, Keller Bay. The rate of Hg accumulation in shrimp, Penaeus sp. , blue crabs, Callinectes sapidus, and oysters, Crassostrea virginica and the Hg depuration rate in C. virginica were examined by performing caging experiments.... For the accumulation experiment shrimp from Matagorda Bay, blue crabs from Keller Bay, and oysters from Carancahua Reef in Carancahua Bay were collected and placed in ambient water and sediment of Lavaca and Keller Bays. Oysters were collected in North Lavaca Bay...

  19. Draft environmental impact statement for construction and operation of the proposed Bangor Hydro-Electric Company`s second 345-kV transmission tie line to New Brunswick

    SciTech Connect (OSTI)

    1993-10-01

    This Draft Environmental Impact Statement (DEIS) was prepared by the US Department of Energy (US DOE). The proposed action is the issuance of Presidential Permit PP-89 by DOE to Bangor Hydro-Electric Company to construct and operate a new international transmission line interconnection to New Brunswick, Canada that would consist of an 83.8 mile (US portion), 345-kilovolt (kV) alternating current transmission line from the US-Canadian border at Baileyville, Maine to an existing substation at Orrington, Maine. The principal environmental impacts of the construction and operation of the transmission line would be incremental in nature and would include the conversion of forested uplands (mostly commercial timberlands) and wetlands to right-of-way (small trees, shrubs, and herbaceous vegetation). The proposed line would also result in localized minor to moderate visual impacts and would contribute a minor incremental increase in the exposure of some individuals to electromagnetic fields. This DEIS documents the purpose and need for the proposed action, describes the proposed action and alternatives considered and provides a comparison of the proposed and alternatives routes, and provides detailed information on analyses of the environmental consequences of the proposed action and alternatives, as well as mitigative measures to minimize impacts.

  20. Sonar imaging of bay bottom sediments and anthropogenic impacts in Galveston Bay, Texas 

    E-Print Network [OSTI]

    Maddox, Donald Shea

    2007-04-25

    Knowledge of surface sediment distribution in Galveston Bay is important because it allows us to better understand how the bay works and how human activities impact the bay and its ecosystems. In this project, six areas ...

  1. 11,23,1,1,,19,10,"BANGOR HYDRO ELECTRIC CO","ELLSWORTH",0,,50159,0,"A",1296,,,97,26317,0,0,1469,6,01179,"WAT","HY"

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home PageMonthly","10/2015"4,"Ames City of",6,1,"Omaha Public PowerOECD/IEA6,,,97,26317,0,0,1469,6,01179,"WAT","HY" 11,23,1,1,,19,15,"BANGOR

  2. 11,23,1,1,,19,10,"BANGOR HYDRO ELECTRIC CO","ELLSWORTH",0,,50159,0,"A",98,,,1999,0,0,1e+15,1469,6,01179,"WAT","HY"

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home PageMonthly","10/2015"4,"Ames City of",6,1,"Omaha Public98,,,1999,0,0,1e+15,1469,6,01179,"WAT","HY" 11,23,1,1,,19,15,"BANGOR HYDRO

  3. Chesapeake Bay Approaches to Baltimore Harbor

    E-Print Network [OSTI]

    Chesapeake Bay Approaches to Baltimore Harbor Chart 12278 BookletChart Commemorative Edition ­ June;United States ­ East Coast MARYLAND CHESAPEAKE BAY APPROACHES TO BALTIMORE HARBOR The chart on the cover forces on the Chesapeake Bay, and defending Baltimore itself. Privateering With peacetime commerce

  4. Meet the Bay Biscayne Bay is a subtropical marine

    E-Print Network [OSTI]

    . It is bordered on the west by Miami-Dade County and on the east side by 2 islands (Miami Beach and Fisher Island meters). Most Miami Heat players could comfortably stand in the Bay and still breathe. Text: Erica Van

  5. Acoustic characteristics of bay bottom sediments in Lavaca Bay, TX 

    E-Print Network [OSTI]

    Patch, Mary Catherine

    2005-08-29

    . The Lavaca Bay estuary is a drowned river valley containing a history of estuary development in the late Pleistocene and Holocene. We used a chirp sonar to gather acoustic reflection profiles, which were classified to categorize and trace reflectors. The data...

  6. Planning For Jamaica Bay's Future: Final Recommendations on the Jamaica

    E-Print Network [OSTI]

    Columbia University

    Planning For Jamaica Bay's Future: Final Recommendations on the Jamaica Bay Watershed Protection Plan Submitted by the Jamaica Bay Watershed Protection Plan Advisory Committee June 1, 2007 #12;Photo. The Jamaica Bay watershed protection plan. Presentation at York College, Queens. #12;PLANNING FOR JAMAICA BAY

  7. NAME: Habitat Restoration in Kaneohe Bay, Hawaii LOCATION: Kaneohe Bay, County of Honolulu, Hawaii

    E-Print Network [OSTI]

    US Army Corps of Engineers

    NAME: Habitat Restoration in Kaneohe Bay, Hawaii LOCATION: Kaneohe Bay, County of Honolulu, Hawaii ACRES: 13 acres coral reef NON-FEDERAL SPONSOR: State of Hawaii: Department of Land and Natural

  8. EA-389 Greay Bay Energy VI, LLC | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Bay Energy VI, LLC Order authorizing Great Bay Energy to export electric energy to Canada. EA-389 Great Bay Energy (CN).pdf More Documents & Publications Application to Export...

  9. Tidal Marsh Vegetation of China Camp, San Pablo Bay, California

    E-Print Network [OSTI]

    Baye, Peter R.

    2012-01-01

    Francisco Bay Regional Water Quality Control Board. p 33–48.Francisco Bay Regional Water Quality Control Board. p 9–32.Francisco Bay Regional Water Quality Control Board. p 332–

  10. RISK ANALYSIS REPORT FOR THE BAY PARK SEWAGE TREATMENT

    E-Print Network [OSTI]

    Zhang, Minghua

    RISK ANALYSIS REPORT FOR THE BAY PARK SEWAGE TREATMENT PLANT (STP) TR-0 analyzes the flooding risks of the Bay Park Sewage Treatment Plant (STP

  11. 11,23,1,1,,19,10,"BANGOR HYDRO ELECTRIC CO","ELLSWORTH",0,,50159,0,"A",98,,,1999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,1469,6,01179,"WAT","HY"

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home PageMonthly","10/2015"4,"Ames City of",6,1,"Omaha Public98,,,1999,0,0,1e+15,1469,6,01179,"WAT","HY" 11,23,1,1,,19,15,"BANGOR

  12. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  13. San Francisco Bay Nutrient Management Strategy

    E-Print Network [OSTI]

    NUMBER 733 DEC 2014 San Francisco Bay Nutrient Management Strategy: Detailed Modeling Workplan-746-7334 (SFEI) · f: 510-746-7300 · www.sfei.org #12;THIS REPORT SHOULD BE CITED AS: SFEI (2014). San Francisco Bay Nutrient Management Strategy: Detailed Modeling Workplan for FY15-FY21. San Francisco Estuary

  14. New and Underutilized Technology: High Bay LED Lighting

    Broader source: Energy.gov [DOE]

    The following information outlines key deployment considerations for high bay LED lighting within the Federal sector.

  15. Planning For Jamaica Bay's Future: Preliminary Recommendations on the

    E-Print Network [OSTI]

    Columbia University

    Planning For Jamaica Bay's Future: Preliminary Recommendations on the Jamaica Bay Watershed Protection Plan Submitted by the Jamaica Bay Watershed Protection Plan Advisory Committee June 29, 2006 #12, February 9. The Jamaica Bay watershed protection plan. Presentation at York College, Queens. #12;PLANNING

  16. Keweenaw Bay Indian Community- 2010 Project

    Broader source: Energy.gov [DOE]

    The Keweenaw Bay Indian Community (KBIC) is committed to preserving our natural environment and reducing the amount of fossil fuels consumed while developing "green" business manufacturing jobs on tribal lands.

  17. Gradient Analysis and Classification of Carolina Bay Vegetation: A Framework for Bay Wetlands Conservation and Restoration

    SciTech Connect (OSTI)

    Diane De Steven,Ph.D.; Maureen Tone,PhD.

    1997-10-01

    This report address four project objectives: (1) Gradient model of Carolina bay vegetation on the SRS--The authors use ordination analyses to identify environmental and landscape factors that are correlated with vegetation composition. Significant factors can provide a framework for site-based conservation of existing diversity, and they may also be useful site predictors for potential vegetation in bay restorations. (2) Regional analysis of Carolina bay vegetation diversity--They expand the ordination analyses to assess the degree to which SRS bays encompass the range of vegetation diversity found in the regional landscape of South Carolina's western Upper Coastal Plain. Such comparisons can indicate floristic status relative to regional potentials and identify missing species or community elements that might be re-introduced or restored. (3) Classification of vegetation communities in Upper Coastal Plain bays--They use cluster analysis to identify plant community-types at the regional scale, and explore how this classification may be functional with respect to significant environmental and landscape factors. An environmentally-based classification at the whole-bay level can provide a system of templates for managing bays as individual units and for restoring bays to desired plant communities. (4) Qualitative model for bay vegetation dynamics--They analyze present-day vegetation in relation to historic land uses and disturbances. The distinctive history of SRS bays provides the possibility of assessing pathways of post-disturbance succession. They attempt to develop a coarse-scale model of vegetation shifts in response to changing site factors; such qualitative models can provide a basis for suggesting management interventions that may be needed to maintain desired vegetation in protected or restored bays.

  18. South Bay Salt Pond Restoration Project SYNTHESES OF SCIENTIFIC KNOWLEDGE

    E-Print Network [OSTI]

    South Bay Salt Pond Restoration Project SYNTHESES OF SCIENTIFIC KNOWLEDGE for Maintaining and Improving Functioning of the South Bay Ecosystem and Restoring Tidal Salt Marsh and Associated Habitats over) Maintaining and Improving Functioning of the South Bay Ecosystem and (2) Restoring tidal salt marsh

  19. Sedimentary parameters of upper Barataria Bay, Louisiana 

    E-Print Network [OSTI]

    Siegert, Rudolf B

    1961-01-01

    SEDIMENTARY PARAMETERS OF UPPER BARATARIA BAY, LOUISIANA A Thesis Rudolf Bernhardt Siegert Submitted to the Graduate School of the Agricultural snd Mechanical College of Texas in partial fulfillment of the reGulremente for the d. agree... of MASTER OF SCIENCE August 1961 Ma)or Sub)ect GeologP SEDYIKNTARY PARAI'ZTEHS OF DT'PBR BARATARIA BAY, LOUISIANA A Thesis By Rudolf Bernhardt Siegert Approved as to style and content by: Chairman of C 'tice Bea of Department or Student Advisor...

  20. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

    2010-11-15

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In{sub 0.33}Ga{sub 0.67}N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm{sup 2} at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm{sup 2}. These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  1. Reconnaissance survey of eight bays in Puget Sound

    SciTech Connect (OSTI)

    Strand, J.A.; Crecelius, E.A.; Pearson, W.H.; Fellingham, G.W.; Elston, R.E.

    1988-03-01

    From 1983 to 1985, Battelle/Marine Research Laboratory conducted reconnaissance-level field and laboratory studies to better characterize toxic contamination problems occurring in selected urban-industrialized bays (Bellingham Bay, Port Gardner - Everett Harbor, Fourmile Rock - Elliot Bay dump site vicinity, Sinclair Inlet) of Puget Sound. It was envisioned that this goal was best achieved by simultaneously determining levels of contamination in selected baseline or 'reference bays' (Samish Bay, Case Inlet, Dabob Bay, Sequim Bay). Two major tasks composed this effort. The first was conducted in 1983 and consisted of preliminary or screening surveys to collect and analyze sediment samples from 101 stations distributed in the four urban-industrialized bays (Figure 1), and at 80 stations distributed in the four baseline bays (Figure 2). The second task was undertaken in 1984 and involved detailed surveys and analyses of the same bays, but at a limited number of stations (32 in urban embayments, 16 in baseline bays). The stations to be resampled in 1984 were the ''cleanest'' of the clean and the ''dirtiest'' of the dirty as determined by the 1983 sediment chemical analyses, and within restrictions imposed by sediment type.

  2. 11,23,1,3,2,19,30,"BANGOR HYDRO ELECTRIC CO","MEDWAY",0,"LIGHT OIL",50159,0,"A",1299,,,2000,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,0,0,99999999,1474,6,01179,"FO2","IC"

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home PageMonthly","10/2015"4,"Ames City of",6,1,"Omaha Public98,,,1999,0,0,1e+15,1469,6,01179,"WAT","HY"3,2,19,30,"BANGOR HYDRO ELECTRIC

  3. Prudhoe Bay Oil Production Optimization: Using Virtual

    E-Print Network [OSTI]

    Mohaghegh, Shahab

    1 Prudhoe Bay Oil Production Optimization: Using Virtual Intelligence Techniques, Stage One: Neural total field oil production by optimizing the gas discharge rates and pressures at the separation handling capacity and subsequent oil production. 10 YEAR AVERAGE AMBIENT 1990-2000 & 2001, 2002 Averages

  4. Fagatele Bay National Marine Sanctuary GIS Capacity

    E-Print Network [OSTI]

    Wright, Dawn Jeannine

    Fagatele Bay National Marine Sanctuary GIS Capacity Binder Index Background 2 Hardware, Software Report, configuration notes American Samoa Spatial Data Infrastructure Maps GIS Data CDs Operating System) #12;Compiled by Allison Graves, Nuna Technologies 2002. 2 Background A GIS presence was established

  5. Fuzzy decision and control, the Bayes context 

    E-Print Network [OSTI]

    Painter, John H.

    1993-12-15

    This paper shows how it is that fuzzy control may be viewed as a particular kind of stochastic (Bayesian) control. With the Bayes approach, fuzzy control may be viewed as an ensembled-average control, where the average is taken over a set...

  6. Cape Bowling Green Green BayBowling

    E-Print Network [OSTI]

    Greenslade, Diana

    KIRWAN AL CLUDEN AL DEERAGUN AL PALLARENDA AL NORTH WARD AL MT MARGARET AL CASTLE HILL AL THE PINNACLES Dotswood Home Hill Townsville Rollingstone Fletcher Vale Burdekin Downs Alligator Creek Charters Towners YABULU MINGELA AL/MAN BAMBAROO LANSDOWN CLARE MUTARNEE NELLY BAY HOME HILL GIRU NORTH RAVENSWOOD

  7. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  8. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer the radiative recombination rates across the active region. Consequently, the light output power was enhanced

  9. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  10. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  11. GaAs MOEMS Technology

    SciTech Connect (OSTI)

    SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.; TIGGES, CHRIS P.; RENO, JOHN L.; PEAKE, GREGORY M.; KLEM, JOHN F.; LEAN, JEN; FULLER, CHARLES T.; BURKHART, JEFF; BAUER, THOMAS; SULLIVAN, CHARLES T.

    2003-03-01

    Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vital step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.

  12. Control of hardwood regeneration in restored carolina bay depression wetlands.

    SciTech Connect (OSTI)

    Moser, Lee, J.; Barton, Christopher, D.; Blake, John, I.

    2012-06-01

    Carolina bays are depression wetlands located in the coastal plain region of the eastern United States. Disturbance of this wetland type has been widespread, and many sites contain one or more drainage ditches. Restoration of bays is of interest because they are important habitats for rare flora and fauna. Previous bay restoration projects have identified flood-tolerant woody competitors in the seedbank and re-sprouting as impediments to the establishment of desired herbaceous wetland vegetation communities. We restored 3 bays on the Savannah River Site, South Carolina, by plugging drainage ditches, harvesting residual pine/hardwood stands within the bays, and monitoring the vegetative response of the seedbank to the hydrologic change. We applied a foliar herbicide on one-half of each bay to control red maple (Acerrubrum), sweetgum (Liquidambar styraciflua), and water oak (Quercus nigra) sprouting, and we tested its effectiveness across a hydrologic gradient in each bay. Hardwood regeneration was partially controlled by flooding in bays that exhibited long growing season hydroperiods. The findings also indicated that herbicide application was an effective means for managing hardwood regeneration and re-sprouting in areas where hydrologic control was ineffective. Herbicide use had no effect on species richness in the emerging vegetation community. In late-season drawdown periods, or in bays where hydroperiods are short, more than one herbicide application may be necessary.

  13. Promising Technology: High Bay Light-Emitting Diodes

    Broader source: Energy.gov [DOE]

    High bay LEDs offer several advantages over conventional high intensity discharge (HID) luminaires including longer lifetimes, reduced maintenance costs, and lower energy consumption.

  14. The Detector System of The Daya Bay Reactor Antineutrino Experiment

    E-Print Network [OSTI]

    F. P. An; J. Z. Bai; A. B. Balantekin; H. R. Band; D. Beavis; W. Beriguete; M. Bishai; S. Blyth; R. L. Brown; I. Butorov; D. Cao; G. F. Cao; J. Cao; R. Carr; W. R. Cen; W. T. Chan; Y. L. Chan; J. F. Chang; L. C. Chang; Y. Chang; C. Chasman; H. Y. Chen; H. S. Chen; M. J. Chen; Q. Y. Chen; S. J. Chen; S. M. Chen; X. C. Chen; X. H. Chen; X. S. Chen; Y. X. Chen; Y. Chen; J. H. Cheng; J. Cheng; Y. P. Cheng; J. J. Cherwinka; S. Chidzik; K. Chow; M. C. Chu; J. P. Cummings; J. de Arcos; Z. Y. Deng; X. F. Ding; Y. Y. Ding; M. V. Diwan; L. Dong; J. Dove; E. Draeger; X. F. Du; D. A. Dwyer; W. R. Edwards; S. R. Ely; S. D. Fang; J. Y. Fu; Z. W. Fu; L. Q. Ge; V. Ghazikhanian; R. Gill; J. Goett; M. Gonchar; G. H. Gong; H. Gong; Y. A. Gornushkin; M. Grassi; L. S. Greenler; W. Q. Gu; M. Y. Guan; R. P. Guo; X. H. Guo; R. W. Hackenburg; R. L. Hahn; R. Han; S. Hans; M. He; Q. He; W. S. He; K. M. Heeger; Y. K. Heng; A. Higuera; P. Hinrichs; T. H. Ho; M. Hoff; Y. K. Hor; Y. B. Hsiung; B. Z. Hu; L. M. Hu; L. J. Hu; T. Hu; W. Hu; E. C. Huang; H. Z. Huang; H. X. Huang; P. W. Huang; X. Huang; X. T. Huang; P. Huber; G. Hussain; Z. Isvan; D. E. Jaffe; P. Jaffke; K. L. Jen; S. Jetter; X. P. Ji; X. L. Ji; H. J. Jiang; W. Q. Jiang; J. B. Jiao; R. A. Johnson; J. Joseph; L. Kang; S. H. Kettell; S. Kohn; M. Kramer; K. K. Kwan; M. W. Kwok; T. Kwok; C. Y. Lai; W. C. Lai; W. H. Lai; T. J. Langford; K. Lau; L. Lebanowski; J. Lee; M. K. P. Lee; R. T. Lei; R. Leitner; J. K. C. Leung; K. Y. Leung; C. A. Lewis; B. Li; C. Li; D. J. Li; F. Li; G. S. Li; J. Li; N. Y. Li; Q. J. Li; S. F. Li; S. C. Li; W. D. Li; X. B. Li; X. N. Li; X. Q. Li; Y. Li; Y. F. Li; Z. B. Li; H. Liang; J. Liang; C. J. Lin; G. L. Lin; P. Y. Lin; S. X. Lin; S. K. Lin; Y. C. Lin; J. J. Ling; J. M. Link; L. Littenberg; B. R. Littlejohn; B. J. Liu; C. Liu; D. W. Liu; H. Liu; J. L. Liu; J. C. Liu; S. Liu; S. S. Liu; X. Liu; Y. B. Liu; C. Lu; H. Q. Lu; J. S. Lu; A. Luk; K. B. Luk; T. Luo; X. L. Luo; L. H. Ma; Q. M. Ma; X. Y. Ma; X. B. Ma; Y. Q. Ma; B. Mayes; K. T. McDonald; M. C. McFarlane; R. D. McKeown; Y. Meng; I. Mitchell; D. Mohapatra; J. Monari Kebwaro; J. E. Morgan; Y. Nakajima; J. Napolitano; D. Naumov; E. Naumova; C. Newsom; H. Y. Ngai; W. K. Ngai; Y. B. Nie; Z. Ning; J. P. Ochoa-Ricoux; A. Olshevskiy; A. Pagac; H. -R. Pan; S. Patton; C. Pearson; V. Pec; J. C. Peng; L. E. Piilonen; L. Pinsky; C. S. J. Pun; F. Z. Qi; M. Qi; X. Qian; N. Raper; B. Ren; J. Ren; R. Rosero; B. Roskovec; X. C. Ruan; W. R. Sands III; B. Seilhan; B. B. Shao; K. Shih; W. Y. Song; H. Steiner; P. Stoler; M. Stuart; G. X. Sun; J. L. Sun; N. Tagg; Y. H. Tam; H. K. Tanaka; W. Tang; X. Tang; D. Taychenachev; H. Themann; Y. Torun; S. Trentalange; O. Tsai; K. V. Tsang; R. H. M. Tsang; C. E. Tull; Y. C. Tung; N. Viaux; B. Viren; S. Virostek; V. Vorobel; C. H. Wang; L. S. Wang; L. Y. Wang; L. Z. Wang; M. Wang; N. Y. Wang; R. G. Wang; T. Wang; W. Wang; W. W. Wang; X. T. Wang; X. Wang; Y. F. Wang; Z. Wang; Z. Wang; Z. M. Wang; D. M. Webber; H. Y. Wei; Y. D. Wei; L. J. Wen; D. L. Wenman; K. Whisnant; C. G. White; L. Whitehead; C. A. Whitten Jr.; J. Wilhelmi; T. Wise; H. C. Wong; H. L. H. Wong; J. Wong; S. C. F. Wong; E. Worcester; F. F. Wu; Q. Wu; D. M. Xia; J. K. Xia; S. T. Xiang; Q. Xiao; Z. Z. Xing; G. Xu; J. Y. Xu; J. L. Xu; J. Xu; W. Xu; Y. Xu; T. Xue; J. Yan; C. G. Yang; L. Yang; M. S. Yang; M. T. Yang; M. Ye; M. Yeh; Y. S. Yeh; K. Yip; B. L. Young; G. Y. Yu; Z. Y. Yu; S. Zeng; L. Zhan; C. Zhang; F. H. Zhang; H. H. Zhang; J. W. Zhang; K. Zhang; Q. X. Zhang; Q. M. Zhang; S. H. Zhang; X. T. Zhang; Y. C. Zhang; Y. H. Zhang; Y. M. Zhang; Y. X. Zhang; Y. M. Zhang; Z. J. Zhang; Z. Y. Zhang; Z. P. Zhang; J. Zhao; Q. W. Zhao; Y. F. Zhao; Y. B. Zhao; L. Zheng; W. L. Zhong; L. Zhou; N. Zhou; Z. Y. Zhou; H. L. Zhuang; S. Zimmerman; J. H. Zou

    2015-08-17

    The Daya Bay experiment was the first to report simultaneous measurements of reactor antineutrinos at multiple baselines leading to the discovery of $\\bar{\

  15. Supplement to Chrisman, Langley, Bay, and Pohorille, \\Incorporating Biological Knowledge

    E-Print Network [OSTI]

    Chrisman, Lonnie

    Supplement to Chrisman, Langley, Bay, and Pohorille, \\Incorporating Biological Knowledge This supplement contains some of the detailed technical details of the proba- bilistic model, algorithm

  16. NOAA Selects Alaska's Kachemak Bay as New Habitat Focus Area

    E-Print Network [OSTI]

    · Resilient coastal communities · Increased coastal/marine tourism, access, and recreation Alaska is also fishing, marine transportation, tourism. A Marine Researcher's Paradise Although Kachemak Bay has amazing

  17. The Making of a Modern Market: eBay.com

    E-Print Network [OSTI]

    Kashkool, Keyvan

    2010-01-01

    political coalitions shift market design and influence theeBay and The Politics of Market Design and Management Thejustification for the market design as a level playing field

  18. The Detector System of The Daya Bay Reactor Antineutrino Experiment

    E-Print Network [OSTI]

    An, F P; Balantekin, A B; Band, H R; Beavis, D; Beriguete, W; Bishai, M; Blyth, S; Brown, R L; Butorov, I; Cao, D; Cao, G F; Cao, J; Carr, R; Cen, W R; Chan, W T; Chan, Y L; Chang, J F; Chang, L C; Chang, Y; Chasman, C; Chen, H Y; Chen, H S; Chen, M J; Chen, Q Y; Chen, S J; Chen, S M; Chen, X C; Chen, X H; Chen, X S; Chen, Y X; Chen, Y; Cheng, J H; Cheng, J; Cheng, Y P; Cherwinka, J J; Chidzik, S; Chow, K; Chu, M C; Cummings, J P; de Arcos, J; Deng, Z Y; Ding, X F; Ding, Y Y; Diwan, M V; Dong, L; Dove, J; Draeger, E; Du, X F; Dwyer, D A; Edwards, W R; Ely, S R; Fang, S D; Fu, J Y; Fu, Z W; Ge, L Q; Ghazikhanian, V; Gill, R; Goett, J; Gonchar, M; Gong, G H; Gong, H; Gornushkin, Y A; Grassi, M; Greenler, L S; Gu, W Q; Guan, M Y; Guo, R P; Guo, X H; Hackenburg, R W; Hahn, R L; Han, R; Hans, S; He, M; He, Q; He, W S; Heeger, K M; Heng, Y K; Higuera, A; Hinrichs, P; Ho, T H; Hoff, M; Hor, Y K; Hsiung, Y B; Hu, B Z; Hu, L M; Hu, L J; Hu, T; Hu, W; Huang, E C; Huang, H Z; Huang, H X; Huang, P W; Huang, X; Huang, X T; Huber, P; Hussain, G; Isvan, Z; Jaffe, D E; Jaffke, P; Jen, K L; Jetter, S; Ji, X P; Ji, X L; Jiang, H J; Jiang, W Q; Jiao, J B; Johnson, R A; Joseph, J; Kang, L; Kettell, S H; Kohn, S; Kramer, M; Kwan, K K; Kwok, M W; Kwok, T; Lai, C Y; Lai, W C; Lai, W H; Langford, T J; Lau, K; Lebanowski, L; Lee, J; Lee, M K P; Lei, R T; Leitner, R; Leung, J K C; Leung, K Y; Lewis, C A; Li, B; Li, C; Li, D J; Li, F; Li, G S; Li, J; Li, N Y; Li, Q J; Li, S F; Li, S C; Li, W D; Li, X B; Li, X N; Li, X Q; Li, Y; Li, Y F; Li, Z B; Liang, H; Liang, J; Lin, C J; Lin, G L; Lin, P Y; Lin, S X; Lin, S K; Lin, Y C; Ling, J J; Link, J M; Littenberg, L; Littlejohn, B R; Liu, B J; Liu, C; Liu, D W; Liu, H; Liu, J L; Liu, J C; Liu, S; Liu, S S; Liu, X; Liu, Y B; Lu, C; Lu, H Q; Lu, J S; Luk, A; Luk, K B; Luo, T; Luo, X L; Ma, L H; Ma, Q M; Ma, X Y; Ma, X B; Ma, Y Q; Mayes, B; McDonald, K T; McFarlane, M C; McKeown, R D; Meng, Y; Mitchell, I; Mohapatra, D; Kebwaro, J Monari; Morgan, J E; Nakajima, Y; Napolitano, J; Naumov, D; Naumova, E; Newsom, C; Ngai, H Y; Ngai, W K; Nie, Y B; Ning, Z; Ochoa-Ricoux, J P; Olshevskiy, A; Pagac, A; Pan, H -R; Patton, S; Pearson, C; Pec, V; Peng, J C; Piilonen, L E; Pinsky, L; Pun, C S J; Qi, F Z; Qi, M; Qian, X; Raper, N; Ren, B; Ren, J; Rosero, R; Roskovec, B; Ruan, X C; Sands, W R; Seilhan, B; Shao, B B; Shih, K; Song, W Y; Steiner, H; Stoler, P; Stuart, M; Sun, G X; Sun, J L; Tagg, N; Tam, Y H; Tanaka, H K; Tang, W; Tang, X; Taychenachev, D; Themann, H; Torun, Y; Trentalange, S; Tsai, O; Tsang, K V; Tsang, R H M; Tull, C E; Tung, Y C; Viaux, N; Viren, B; Virostek, S; Vorobel, V; Wang, C H; Wang, L S; Wang, L Y; Wang, L Z; Wang, M; Wang, N Y; Wang, R G; Wang, T; Wang, W; Wang, W W; Wang, X T; Wang, X; Wang, Y F; Wang, Z; Wang, Z M; Webber, D M; Wei, H Y; Wei, Y D; Wen, L J; Wenman, D L; Whisnant, K; White, C G; Whitehead, L; Whitten, C A; Wilhelmi, J; Wise, T; Wong, H C; Wong, H L H; Wong, J; Wong, S C F; Worcester, E; Wu, F F; Wu, Q; Xia, D M; Xia, J K; Xiang, S T; Xiao, Q; Xing, Z Z; Xu, G; Xu, J Y; Xu, J L; Xu, J; Xu, W; Xu, Y; Xue, T; Yan, J; Yang, C G; Yang, L; Yang, M S; Yang, M T; Ye, M; Yeh, M; Yeh, Y S; Yip, K; Young, B L; Yu, G Y; Yu, Z Y; Zeng, S; Zhan, L; Zhang, C; Zhang, F H; Zhang, H H; Zhang, J W; Zhang, K; Zhang, Q X; Zhang, Q M; Zhang, S H; Zhang, X T; Zhang, Y C; Zhang, Y H; Zhang, Y M; Zhang, Y X; Zhang, Z J; Zhang, Z Y; Zhang, Z P; Zhao, J; Zhao, Q W; Zhao, Y F; Zhao, Y B; Zheng, L; Zhong, W L; Zhou, L; Zhou, N; Zhou, Z Y; Zhuang, H L; Zimmerman, S; Zou, J H

    2015-01-01

    The Daya Bay experiment was the first to report simultaneous measurements of reactor antineutrinos at multiple baselines leading to the discovery of $\\bar{\

  19. Modeling nitrogen cycling in forested watersheds of Chesapeake Bay

    SciTech Connect (OSTI)

    Hunsaker, C.T.; Garten, C.T.; Mulholland, P.J.

    1995-03-01

    The Chesapeake Bay Agreement calls for a 40% reduction of controllable phosphorus and nitrogen to the tidal Bay by the year 2000. To accomplish this goal the Chesapeake Bay Program needs accurate estimates of nutrient loadings, including atmospheric deposition, from various land uses. The literature was reviewed on forest nitrogen pools and fluxes, and nitrogen data from research catchments in the Chesapeake Basin were identified. The structure of a nitrogen module for forests is recommended for the Chesapeake Bay Watershed Model along with the possible functional forms for fluxes.

  20. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  1. Current Perspectives on the Physical and Biological Processes of Humboldt Bay

    E-Print Network [OSTI]

    Schlosser, S. C.; Rasmussen, R.

    2007-01-01

    and licensing of bar pilots, assisting in the research of navigation and safety improvements for Humboldt Bay, coordinating the Humboldt Bay Oil

  2. Targeting Net Zero Energy at Marine Corps Base Kaneohe Bay, Hawaii...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Targeting Net Zero Energy at Marine Corps Base Kaneohe Bay, Hawaii: Assessment and Recommendations Targeting Net Zero Energy at Marine Corps Base Kaneohe Bay, Hawaii: Assessment...

  3. Computational analysis of thin film InGaAs/GaAs quantum well solar cells with

    E-Print Network [OSTI]

    Yu, Edward T.

    Computational analysis of thin film InGaAs/GaAs quantum well solar cells with back side light, Austin, TX 78758, USA * ety@ece.utexas.edu Abstract: Simulations of thin film (~2.5 µm thick) InGaAs/GaAs. Roberts, G. Hill, and C. Calder, "Progress in quantum well solar cells," Thin Solid Films 511­512, 76

  4. GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response

    E-Print Network [OSTI]

    Jalali. Bahram

    into existing multijunction cells either as a means to increase the current or efficiency by using low band gapGaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

  5. Willapa Bay Marine Ecology Research 1 Willapa Bay Marine Ecology Research: 2003 Summary

    E-Print Network [OSTI]

    Ruesink, Jennifer

    for us ­ and, as you may have noticed, a "tent city" that periodically sprang up around our house, on average, by four days each decade since 1936, and the frequency of commercial sets is more common found for the last few years ­ but a little sooner, probably from the warm bay water conditions. Third

  6. Chesapeake Bay Chart 12254 Cape Henry to Thimble Shoal Light

    E-Print Network [OSTI]

    Chesapeake Bay Chart 12254 ­ Cape Henry to Thimble Shoal Light BookletChart Commemorative Edition chart for navigation. · Complete, reduced scale nautical chart · Print at home for free · Convenient LIGHT The chart on the cover is Coast Chart No. 31, Chesapeake Bay­York River, Hampton Roads, Chesapeake

  7. Identifying Sources of Nitrogen to Hanalei Bay, Kauai, Utilizing the

    E-Print Network [OSTI]

    Paytan, Adina

    Identifying Sources of Nitrogen to Hanalei Bay, Kauai, Utilizing the Nitrogen Isotope Signature, Menlo Park, California 94025, and P.O. Box 681, Kilauea, Hawaii 96754 Sewage effluent, storm runoff of land derived nutrients into Hanalei Bay, Kauai. We determined the nitrogen isotopic signatures (15N

  8. Modeling the Circulation in Penobscot Bay, Maine Huijie Xue1

    E-Print Network [OSTI]

    Xiu, Peng

    Xue et al1 Modeling the Circulation in Penobscot Bay, Maine Huijie Xue1 , Yu Xu1 , David Brooks2 , Neal Pettigrew1 , John Wallinga1 1. School of Marine Sciences, University of Maine, Orono, ME 04469 Penobscot Bay, with approximate dimensions 50 x 100 km, is the largest estuarine embayment along the Maine

  9. Neutron calibration sources in the Daya Bay experiment

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liu, J.; Carr, R.; Dwyer, D. A.; Gu, W. Q.; Li, G. S.; McKeown, R. D.; Qian, X.; Tsang, R. H. M.; Wu, F. F.; Zhang, C.

    2015-07-09

    We describe the design and construction of the low rate neutron calibration sources used in the Daya Bay Reactor Anti-neutrino Experiment. Such sources are free of correlated gamma-neutron emission, which is essential in minimizing induced background in the anti-neutrino detector. Thus, the design characteristics have been validated in the Daya Bay anti-neutrino detector.

  10. OFFSHORE FISHING IN BRISTOL BAY AND BERING SEA

    E-Print Network [OSTI]

    OFFSHORE FISHING IN BRISTOL BAY AND BERING SEA Marine Biological Laboratory DEC 19 1952 WOODS HOLE AND WILDLIFE SERVICE #12;#12;OFFSHORE FISHING IN BRISTOL BAY AND BERING SEA Marine Biological Laboratory DEC 19 governing the fishery 3 Experimental offshore fishing 5 Operations in 1939 6 Summary of 1939 operations , 13

  11. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  12. BayWa Group | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminexInformationArkansas: Energy ResourcesPoint,View,BayWa Group

  13. Hooper Bay Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View NewGuam: Energyarea,Magazine Jump to: navigation,(SREP)Hooper Bay

  14. Bristol Bay Geothermal Area | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowaWisconsin:PontiacInformation Forest ServiceBridgewater2Bristol Bay

  15. Cleveland Bay Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButtePower Ventures Jump to: navigation, search Name: Clear PowerCleveland Bay Wind

  16. CHANGES IN THE DISTRIBUTION AND DENSITY OF FLORIDA BAY MACROPHYTES: 1995 2004

    E-Print Network [OSTI]

    Durako, Michael J.

    CHANGES IN THE DISTRIBUTION AND DENSITY OF FLORIDA BAY MACROPHYTES: 1995 ­ 2004 J. Brooke Landry................................................................................xiii BASIN-SCALE CHANGES IN THE DISTRIBUTION AND DENSITY OF FLORIDA BAY MACROPHYTES: 1995 ­ 2004............................................................................194 BAY-SCALE CHANGES IN THE DISTRIBUTION AND DENSITY OF FLORIDA BAY MACROPHYTES: 1995 ­ 2004

  17. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  18. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the k·p method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 Å. The joint density of states and optical absorption of a 40/40 Å GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  19. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  20. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  1. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  2. Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    Gao, Feng, Ph. D. Massachusetts Institute of Technology

    2014-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

  3. Bayes Empirical Bayes Inference of Amino Acid Sites Under Positive Selection Ziheng Yang,* Wendy S.W. Wong, and Rasmus Nielsen

    E-Print Network [OSTI]

    Nielsen, Rasmus

    . In this paper, we develop a Bayes empirical Bayes (BEB) approach to the problem, which assigns a prior and simulated data sets. The results suggest that in small data sets the new BEB method does not generate false

  4. Muon Simulation at the Daya Bay SIte

    SciTech Connect (OSTI)

    Mengyun, Guan; Jun, Cao; Changgen, Yang; Yaxuan, Sun; Luk, Kam-Biu

    2006-05-23

    With a pretty good-resolution mountain profile, we simulated the underground muon background at the Daya Bay site. To get the sea-level muon flux parameterization, a modification to the standard Gaisser's formula was introduced according to the world muon data. MUSIC code was used to transport muon through the mountain rock. To deploy the simulation, first we generate a statistic sample of sea-level muon events according to the sea-level muon flux distribution formula; then calculate the slant depth of muon passing through the mountain using an interpolation method based on the digitized data of the mountain; finally transport muons through rock to get underground muon sample, from which we can get results of muon flux, mean energy, energy distribution and angular distribution.

  5. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    director cds murder nudity soundtrack BBC movie releases footage worth documentary film Blu-rays Blu-ray Ga

  6. Studies on the anatomy and ecological distribution of Dentalium texasianum Philippi 1848 in West Bay of the Galveston Bay complex (Mollusca: scaphopoda 

    E-Print Network [OSTI]

    Peterson, Larry Randal

    1972-01-01

    STUDIES ON THE ANATOMY AND ECOLOGICAL DISTRIBUTION OF DENTALIUM TEXASIANUM PHILIPPI 1848 IN WEST BAY OF THE GALVESTON BAY COMPLEX (MOLLUSCA:SCAPHOPODA) A Thesis by LARRY RANDAL PETERSEN Submitted to the Graduate College of Texas A...&M University in partial fulfillment of the requirement for the degree of MASTER OF SCIENCE August 1972 Major Subject: Biology STUDIES ON THE ANATOMY AND ECOLOGICAL DISTRIBUTION OF DENTALIUM TEXASIANUM PHILIPPI 1848 IN WEST BAY OF THE GALVESTON BAY...

  7. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  8. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  9. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  10. Seagrass habitat utilization by fishes in Christmas Bay, Texas 

    E-Print Network [OSTI]

    Crotwell, Patricia Lynn

    1997-01-01

    Fishes in Christmas Bay, TX were collected during April 1994 through March 1995 to: 1) assess temporal variability in their density, biomass, and diversity; 2) define the relationship between variability in fish population parameters...

  11. Manganese Oxidation In A Natural Marine Environment- San Antonio Bay 

    E-Print Network [OSTI]

    Neyin, Rosemary Ogheneochuko

    2013-04-12

    the San Antonio Bay. In this study area, the formaldoxime assay was utilized to determine that manganese oxidation is catalyzed via multiple pathways utilizing various catalysts and proximal oxidants. The contribution of catalysts such as colloidal matter...

  12. Thermal Waters Along The Konocti Bay Fault Zone, Lake County...

    Open Energy Info (EERE)

    Thermal Waters Along The Konocti Bay Fault Zone, Lake County, California- A Re-Evaluation Jump to: navigation, search OpenEI Reference LibraryAdd to library Journal Article:...

  13. Assembly and Installation of the Daya Bay Antineutrino Detectors

    E-Print Network [OSTI]

    H. R. Band; R. L. Brown; R. Carr; X. C. Chen; X. H. Chen; J. J. Cherwinka; M. C. Chu; E. Draeger; D. A. Dwyer; W. R. Edwards; R. Gill; J. Goett; L. S. Greenler; W. Q. Gu; W. S. He; K. M. Heeger; Y. K. Heng; P. Hinrichs; T. H. Ho; M. Hoff; Y. B. Hsiung; Y. Jin; L. Kang; S. H. Kettell; M. Kramer; K. K. Kwan; M. W. Kwok; C. A. Lewis; G. S. Li; N. Li; S. F. Li; X. N. Li; C. J. Lin; B. R. Littlejohn; J. L. Liu; K. B. Luk; X. L. Luo; X. Y. Ma; M. C. McFarlane; R. D. McKeown; Y. Nakajima; J. P. Ochoa-Ricoux; A. Pagac; X. Qian; B. Seilhan; K. Shih; H. Steiner; X. Tang; H. Themann; K. V. Tsang; R. H. M. Tsang; S. Virostek; L. Wang; W. Wang; Z. M. Wang; D. M. Webber; Y. D. Wei; L. J. Wen; D. L. Wenman; J. Wilhelmi; M. Wingert; T. Wise; H. L. H. Wong; F. F. Wu; Q. Xiao; L. Yang; Z. J. Zhang; W. L. Zhong; H. L. Zhuang

    2013-09-06

    The Daya Bay reactor antineutrino experiment is designed to make a precision measurement of the neutrino mixing angle theta13, and recently made the definitive discovery of its nonzero value. It utilizes a set of eight, functionally identical antineutrino detectors to measure the reactor flux and spectrum at baselines of 300 - 2000m from the Daya Bay and Ling Ao Nuclear Power Plants. The Daya Bay antineutrino detectors were built in an above-ground facility and deployed side-by-side at three underground experimental sites near and far from the nuclear reactors. This configuration allows the experiment to make a precision measurement of reactor antineutrino disappearance over km-long baselines and reduces relative systematic uncertainties between detectors and nuclear reactors. This paper describes the assembly and installation of the Daya Bay antineutrino detectors.

  14. Project Reports for Keweenaw Bay Indian Community- 2010 Project

    Broader source: Energy.gov [DOE]

    The Keweenaw Bay Indian Community (KBIC) is committed to preserving our natural environment and reducing the amount of fossil fuels consumed while developing "green" business manufacturing jobs on tribal lands.

  15. JAMAICA BAY TASK FORCE MEETING Tuesday April 6, 2010

    E-Print Network [OSTI]

    Columbia University

    Len Houston, U.S. Army Corps of Engineers (USACE) 7:30 Liquefied Natural Gas (LNG) Update Dan Mundy Jr., Jamaica Bay EcoWatchers 7:50 Recent Nitrogen Agreement with NYC Brad Sewell, Natural Resources Defense

  16. Cross-media approach to saving the Chesapeake Bay

    SciTech Connect (OSTI)

    Appleton, E.L.

    1995-12-01

    A project EPA began in August will investigate the possibility of cross-media emissions trading as a new approach to reducing nitrogen loadings to the Chesapeake Bay. Working with the Environmental Defense Fund (EDF), the Agency hopes to device a NO{sub x} trading framework along the lines of existing sulfur dioxide trading plans to control acid rain. The Chesapeake Air Project will examine the feasibility of using emissions trading between and water sources, including trading credits between power plants and mobile sources, to reduce the atmospheric deposition of nitrogen to the bay. The progress of the Bay Program nutrient reduction goals is up for reevaluation in 1997, and Knopes and EDF economist Brian Morton have high hopes that the trading plan, which would place a cap on the mass of emissions and rate of deposition allowed by all sources, will become the atmospheric deposition portion of the Chesapeake Bay Program`s Nutrient Reduction Strategy. 6 refs.

  17. Project Reports for Keweenaw Bay Indian Community- 2010 Project

    Broader source: Energy.gov [DOE]

    The goal of the project is to build the staff capacity to enable the Keweenaw Bay Indian Community (KBIC) to establish a tribal weatherization program that promotes energy sufficiency throughout the tribal community.

  18. Fish assemblages on coral reefs in Guanaja, Bay Islands, Honduras 

    E-Print Network [OSTI]

    Mahendran, Christopher Kandiah

    1999-01-01

    Species composition and relative abundance of ichthyofaunal assemblages on reefs surrounding Guanaja, Bay Islands, Honduras were censused from June through December 1996. Transect and random swim surveys were used to characterize community structure...

  19. Preliminary Investigation of Tracer Gas Reaeration Method for Shallow Bays 

    E-Print Network [OSTI]

    Baker, Sarah H.; Holley, Edward R.

    1987-01-01

    Accurate estimates of surface exchange rates for volatile pollutants in bays are needed to allow predictions of pollutant movement and retention time. The same types of estimates can be used to calculate reaeration rates. The tracer gas technique...

  20. Geological oceanography of the Atchafalaya Bay area, Louisiana 

    E-Print Network [OSTI]

    Thompson, Warren Charles

    1953-01-01

    GEOLOGICAL OCEANOGRAPHY OF THE ATCHAFALAYA BAY AREA, LOUISIANA A Dissertation By WARREN CHARLES THOMPSON Approved as to style and content by: t/yu*-. W. Armstrong Price,' Chairman of Committee Dale F. Leipper, Head of May 1953 GEOLOGICAL... OCEANOGRAPHY OF THE ATCHAFALAYA BAY AREA, LOUISIANA By WARREN CHARLES THOMPSON111 A Dissertation Submitted to the Graduate School of the Agricultural and Mechanical College of Texas in partial fulfillment of the requirements for the degree of DOCTOR...

  1. On the circulation and tidal flushing of Mobile Bay, Alabama 

    E-Print Network [OSTI]

    Austin, George Belden

    1953-01-01

    of Symbols, Tables ~ . . . I, INTRODUCTION Historical B. Classification of Estuaries C. Ob]ectives II. GENERAL DISCUSSION OF NOBILE BAY A. Geomorphological B. Geological C. Biological iii ~ ~ vi ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ o sic.... Collection of Data 27 2B V, ANALYSIS OF THE DATA A. Methods B. Distribution of Temperature, Salinity, and Fresh Water Page 30 30 C. Circulation D. Mass Transport . E. Tidal Flushing of Mobile Bay . VI ~ SUMMAHY AND CONCLUSIONS VII, BIBLIOGRAPHY...

  2. Subenvironments of deposition in San Antonio Bay, Texas 

    E-Print Network [OSTI]

    Hall, Gary Lynn

    1973-01-01

    SUBENVIRONMENTS OF DEPOSITION IN SAN ANTONIO BAY, TEXAS A Thesis by GARY LYNN HALL Submitted to the Graduate College of Texas ASM University in partial fulfillment of the requirement for the degree of MASTER OF SCIENCE December 1973 Major... Subject: Oceanography SUBENVIRONMENTS OF DEPOSITION IN SAN ANTONIO BAY, TEXAS A Thesis by GARY LYNN HALL Approved as to style and content by: hairman o ommi ttee Head of epartme, Mem er Mem e er December 1973 ABSTRACT Subenvironments...

  3. Bay Alarm Contract: Campus Notification Purchasing has established a 3 year master agreement with Bay Alarm for burglary monitoring services,

    E-Print Network [OSTI]

    Bay Alarm Contract: Campus Notification Purchasing has established a 3 year master agreement verification fees, as I will pay those if you use the negotiated agreement. As long as you have existing phone

  4. City of Bangor, Wisconsin (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgia (Utility Company)Arlington,City of

  5. The Cost of the Technological Sublime: Daring Ingenuity and the new San Francisco-Oakland Bay Bridge

    E-Print Network [OSTI]

    Frick, Karen Trapenberg

    2008-01-01

    Cruz. ‘Unity Towers East Bay Bridge‘, New East Span ProposalSubmitted to MTC Bay Bridge Design Task Force, 6 May.Francisco- Oakland Bay Bridge, T.Y. Lin International and

  6. Scientific Achievement Networks of highly photoresponsive crystalline GaSe

    E-Print Network [OSTI]

    Geohegan, David B.

    Scientific Achievement Networks of highly photoresponsive crystalline GaSe nanosheets a crystalline GaSe target was adjusted to directly grow networks of interconnected triangular GaSe crystalline nanosheets of ~ 200 nm size (inset shows atomic

  7. Proceedings of the Symposium: Current Perspectives on the Physical and Biological Processes of Humboldt Bay, March 2004

    E-Print Network [OSTI]

    Schlosser, S. C.

    2007-01-01

    and licensing of bar pilots, assisting in the research of navigation and safety improvements for Humboldt Bay, coordinating the Humboldt Bay Oil

  8. Development of metallization for GaAs and AlGaAs concentrator solar cells

    SciTech Connect (OSTI)

    Tobin, S.P.

    1987-04-01

    A three-layer metallization system was developed for high temperature stability on GaAs and AlGaAs solar cells. The layers are a Pt ohmic contact metal that forms thermally stable compounds with GaAs, a TiN diffusion barrier, and a gold conductor. The solar cell structure was also designed for contact stability, with the key component being a heavily doped GaAs cap layer. Reactively sputtered TiN was found to act as an excellent barrier when deposited under the proper conditions. The conditions were carefully optimized for low resistivity and low stress in the films. A low but nonzero substrate bias during sputtering was found to be important. Solar cells with sputtered metallizations of Pt/TiN/Ti/Pt/Au were found to be thermally stable up to 500/sup 0/C for 15 minutes in vacuum. At 600/sup 0/C there was catastrophic degradation of the cells due to dissociation of uncapped GaAs surfaces. Below this temperature the metallization performed as designed. The Pt and GaAs layers reacted to form a stable PtGa compound layer that gave low contact resistance. There was no penetration of Au or GaAs through the barrier layer. These results are a very encouraging first step leading to stable, reliable GaAs and AlGaAs concentrator cells.

  9. Cathodic Protection of the Yaquina Bay Bridge

    SciTech Connect (OSTI)

    Bullard, Sophie J.; Cramer, Stephen D.; Covino, Bernard S., Jr.; Holcomb, Gordon R.; Russell, James H.; Laylor, H.M.; Cryer, C.B.

    2001-02-01

    The Yaquina Bay Bridge in Newport, Oregon, was designed by Conde B. McCullough and built in 1936. The 3,223-foot (982 m) structure is a combination of concrete arch approach spans and a steel through arch over the shipping channel. Cathodic protection is used to prevent corrosion damage to the concrete arches. The Oregon Department of Transportation (Oregon DOT) installed a carbon anode coating (DAC-85) on two of the north approach spans in 1985. This anode was operated at a current density of 6.6 mA/m2(0.6 mA/ft2). No failure of the conductive anode was observed in 1990, five years after application, or in 2000, 15 years after application. Thermal-sprayed zinc anodes 20 mils (0.5 mm) thick were applied to half the south approach spans beginning in 1990. Thermal-sprayed zinc anodes 15 mils (0.4 mm) thick were applied to the remaining spans in 1996. These anodes were operated at a current density of 2.2 mA/m2(0.2 mA/ft2). In 1999, four zones on the approach spans were included in a two-year field trial of humectants to improve zinc anode performance. The humectants LiNO3 and LiBr were applied to two zones; the two adjacent zones were left untreated as controls. The humectants substantially reduced circuit resistance compared to the controls.

  10. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; Worschech, L.; Gru?tzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  11. Energy Secretary Steven Chu to Travel to Bay Area to Highlight...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Secretary Steven Chu to Travel to Bay Area to Highlight State of the Union Address, Commitment to Clean Energy Energy Secretary Steven Chu to Travel to Bay Area to Highlight...

  12. Natural geological responses to anthropogenic alterations of the naples bay estuarine system 

    E-Print Network [OSTI]

    Fielder, Bryan Robert

    2009-05-15

    .1 Regional Geologic Setting....................................................................... 4 2.2 Environmental Setting ............................................................................. 5 2.3 Historical Anthropogenic Alterations... ............................................................... 19 4.2.2 Southern Naples Bay ............................................................... 20 4.2.3 Dollar Bay ............................................................................... 22 5. DISCUSSION...

  13. Hydro INTERNATIONAL | OCTOBER 2015 | 21 Figure 1: Bechevin Bay Inlet System.

    E-Print Network [OSTI]

    New Hampshire, University of

    Hydro INTERNATIONAL | OCTOBER 2015 | 21 FEATURE | Figure 1: Bechevin Bay Inlet System. Bechevin Bay, the derived bathymetry was limited to very shallow depths because of the sediment #12;| OCTOBER 2015 | Hydro

  14. Ohmic contacts to n-GaSb 

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  15. FISHES, MACROINVERTEBRATES, AND HYDROLOGICAL CONDITIONS OF UPLAND CANALS IN TAMPA BAY, FLORIDA'

    E-Print Network [OSTI]

    with the estuary. Shortly after draglines removed earth plugs between the excavated canal system and the bay

  16. Education Program for Improved Water Quality in Copano Bay Final Report 

    E-Print Network [OSTI]

    Berthold, A.; Moench, E.; Wagner, K.; Paschal, J.

    2012-05-17

    delivered educational programs to landowners throughout the watershed. Result demonstrations, county programs, one-on-one landowner assistance, BMP exhibits, Ag Tours, publications and other educational meetings have been used to reach the widest array... in Copano Bay to assess any potential trends or changes that have occurred. Summary of Task 2 Report Copano Bay is a 65-square-mile estuary located northeast of Corpus Christi, Texas. Port Bay, Mission Bay, the Aransas River arm, and the eastern...

  17. Anthropogenic Influence on Recent Bathymetric Change in West-Central San Francisco Bay

    E-Print Network [OSTI]

    Barnard, Patrick; Kvitek, Rikk

    2010-01-01

    Bay coastal system. Sedimentology, In: Li M, Sherwood C,Publication Book on Shelf Sedimentology. 33 p. Fregoso TA,

  18. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  19. A regional numerical ocean model of the circulation in the Bay of Biscay

    E-Print Network [OSTI]

    Drijfhout, Sybren

    A regional numerical ocean model of the circulation in the Bay of Biscay Y. Friocourt,1,2,3 B Peninsula and in the Bay of Biscay is investigated by means of a regional ocean model. In particular numerical ocean model of the circulation in the Bay of Biscay, J. Geophys. Res., 112, C09008, doi:10

  20. Sedimentary environments and processes in a shallow, Gulf Coast Estuary-Lavaca Bay, Texas. 

    E-Print Network [OSTI]

    Bronikowski, Jason Lee

    2004-11-15

    Sedimentation rates in sediment cores from Lavaca Bay have been high within the last 1-2 decays within the central portion of the bay, with small fluctuations from river input. Lavaca Bay is a broad, flat, and shallow (<3 m) microtidal estuary...

  1. Recent marine podocopid Ostracoda of Narragansett Bay, Rhode Island

    E-Print Network [OSTI]

    Williams, R. B.

    1966-11-23

    major factors: ( I) inadequate collecting station location density; (2) lack of en- vironmental data obtained at time of sampling; and (3), loss of portions of the sample attributable to leakage of the sampling apparatus. It may be that the third factor... ni. FM 6. Propontocypris edwardsi ( CusHmAN), a-c, RV int., LV hinge, both valves dorsal, X 90. Williams-Podocopid Ostracoda of Narragansett Bay 13 Material.-Specimens 34, of which 29 were articulated. Distribution.-Narragansett Bay, Rhode Island...

  2. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  3. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  4. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys Weili Liua and Alexander A. Balandin have investigated theoretically the thermoelectric effects in wurtzite GaN crystals and AlxGa1-xN-based alloys may have some potential as thermoelectric materials at high temperature. It was found

  5. AGE, GROWTH, SEX RATIO, AND MATURITY OF THE WHITEFISH IN CENTRAL GREEN BAY AND ADJACENT WATERS OF LAKE MICHIGAN

    E-Print Network [OSTI]

    lighter than those from Green Bay. Weight increased to the 3.386 power of length in Green Bay (combinedAGE, GROWTH, SEX RATIO, AND MATURITY OF THE WHITEFISH IN CENTRAL GREEN BAY AND ADJACENT WATERS from five localities In central Green Bay in 1948-49 and 1951-52 and 204 in a single 1948 collection

  6. Inventory and analysis of bay management structure for the Corpus Christi Bay National Estuary Program study area

    SciTech Connect (OSTI)

    Richard, B.; Bacon, E.; Dietz, R.; DeMoors, K.; Needham, K.

    1996-02-01

    This report characterizes the existing resource management framework for the Corpus Christi Bay National Estuary Program (CCBNEP) study area. Historical and current regulatory and non-regulatory approaches to resource management were examined, and an identification made of the significant gaps or overlaps in organizational roles and authorities. Efforts were taken to coordinate the Base Program Analysis with that for the Galveston Bay NEP, the Texas Coastal Management Program, and other similar projects, to both build upon and ensure that efforts are not duplicated.

  7. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  8. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  9. A hole accelerator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Demir, Hilmi Volkan, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey)

    2014-10-13

    The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

  10. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Universitą di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D?=0.53(×2.1±1) cm² s?¹ that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  11. Bayes Estimation for the Marshall-Olkin Bivariate Weibull Distribution

    E-Print Network [OSTI]

    Kundu, Debasis

    Bayes Estimation for the Marshall-Olkin Bivariate Weibull Distribution Debasis Kundu1 & Arjun K distribution. It is a singular distribution whose marginals are Weibull dis- tributions with respect to the squared error loss function and the prior distributions allow for prior dependence among

  12. Covered Product Category: Industrial Luminaires (High/Low Bay)

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Federal Energy Management Program (FEMP) provides acquisition guidance and Federal efficiency requirements for Industrial Luminaires (High/Low Bay). Federal laws and requirements mandate that agencies meet these efficiency requirements in all procurement and acquisition actions that are not specifically exempted by law.

  13. UMCESUNIVERSITY OF MARYLAND CENTER for ENVIRONMENTAL SCIENCE CHESAPEAKE BAY

    E-Print Network [OSTI]

    Boynton, Walter R.

    : Utility of ConMon Data for Assessing Shallow Water Habitats 2-1 Community Metabolism: Use of ConMon Data on ConMon data collected along a eutrophication gradient from the Maryland Coastal Bays (A) Bishopville versus daily DO range (max DO ­ min DO) based on ConMon data collected along a eutrophication gradient

  14. Water Recycling Becomes Reality In the South Bay

    E-Print Network [OSTI]

    Water Recycling Becomes Reality In the South Bay 12th Biennial State of the San Francisco Estuary Conference Friday September 18, 2015 #12;2 Presentation will cover: Santa Clara Valley Water District and Water Supply Picture Silicon Valley Advanced Water Purification Center Recycled Water Expansion- Potable

  15. Predicting Customer Behavior using Naive Bayes and Maximum Entropy

    E-Print Network [OSTI]

    Keysers, Daniel

    of returned goods, we additionally generated two binary features for zero and missing values. The remaining Naive Bayes, Maximum Entropy, Neural Networks and Logistic Regression for classification of cus- tomer classifiers won the Data-Mining-Cup in 2004. Combining Logistic Regression, Neural Networks, and Maximum

  16. AT GUANTANAMO BAY: A HYBRID WIND-DIESEL SYSTEM

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    WIND POWER AT GUANTANAMO BAY: A HYBRID WIND-DIESEL SYSTEM FOR THE US NAVY AT GUANTANAMO NAVAL BASE Laboratory and are actively developing what will be the world's largest wind-diesel hybrid electric plant. The pending installation of four 950-kW wind turbines to supplement the 22.8 MW diesel electricity plant

  17. Observations of remote and local forcing in Galveston Bay, Texas 

    E-Print Network [OSTI]

    Guannel, Gregory

    2001-01-01

    . The observations show that the subtidal water surface energy increases with decreasing frequency, and that amount of energy increases with distance towards the end of the estuary. The surface setup and the water elevation at the entrance of the bay are asymmetric...

  18. Manufacturing Facility/ Bay Library Information Introduction what is BREEAM?

    E-Print Network [OSTI]

    Martin, Ralph R.

    Manufacturing Facility/ Bay Library Information Introduction ­ what is BREEAM? BREEAM is one Trust. For further information on the BRE Trust please refer to their website www.bre.co.uk BREEAM that the building can be simply identified. BREEAM Rating and score Targeting BREEAM `Excellent' 70.0% BREEAM

  19. Risk assessment for produced water discharges to Louisiana Open Bays

    SciTech Connect (OSTI)

    Meinhold, A.F.; DePhillips, M.P.; Holtzman, S.

    1995-06-23

    Data were collected prior to termination of discharge at three sites (including two open bay sites at Delacroix Island and Bay De Chene) for the risk assessments. The Delacroix Island Oil and Gas Field has been in production since the first well drilling in 1940; the Bay De Chene Field, since 1942. Concentrations of 226Ra, 228Ra, 210Po, and 228Th were measured in discharges. Radium conc. were measured in fish and shellfish tissues. Sediment PAH and metal conc. were also available. Benthos sampling was conducted. A survey of fishermen was conducted. The tiered risk assessment showed that human health risks from radium in produced water appear to be small; ecological risk from radium and other radionuclides in produced water also appear small. Many of the chemical contaminants discharged to open Louisiana bays appear to present little human health or ecological risk. A conservative screening analysis suggested potential risks to human health from Hg and Pb and a potential risk to ecological receptors from total effluent, Sb, Cd, Cu, Pb, Ni, Ag, Zn, and phenol in the water column and PAHs in sediment; quantitiative risk assessments are being done for these contaminants.

  20. The Carolina Bay Restoration Project - Final Report 2000-2006.

    SciTech Connect (OSTI)

    Barton, Christopher

    2007-12-15

    A Wetlands Mitigation Bank was established at SRS in 1997 as a compensatory alternative for unavoidable wetland losses. Prior to restoration activities, 16 sites included in the project were surveyed for the SRS Site Use system to serve as a protective covenant. Pre-restoration monitoring ended in Fall 2000, and post restoration monitoring began in the Winter/Spring of 2001. The total interior harvest in the 16 bays after harvesting the trees was 19.6 ha. The margins in the opencanopy, pine savanna margin treatments were thinned. Margins containing areas with immature forested stands (bay 5184 and portions of bay 5011) were thinned using a mechanical shredder in November 2001. Over 126 hectares were included in the study areas (interior + margin). Planting of two tree species and the transplanting of wetland grass species was successful. From field surveys, it was estimated that approximately 2700 Nyssa sylvatica and 1900 Taxodium distichum seedlings were planted in the eight forested bays resulting in an average planting density of ? 490 stems ha-1. One hundred seedlings of each species per bay (where available) were marked to evaluate survivability and growth. Wetland grass species were transplanted from donor sites on SRS to plots that ranged in size from 100 – 300 m2, depending on wetland size. On 0.75 and 0.6 meter centers, respectively, 2198 plugs of Panicum hemitomon and 3021 plugs Leersia hexandra were transplanted. New shoots originating from the stumps were treated with a foliar herbicide (Garlon® 4) during the summer of 2001 using backpack sprayers. Preliminary information from 2000-2004 regarding the hydrologic, vegetation and faunal response to restoration is presented in this status report.

  1. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  2. Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells

    E-Print Network [OSTI]

    Weinstein, Benard.A.

    recently that the temperature shifts of the photo- and electroluminescence EL peak energies in Nichia greenV/GPa for the green and blue diodes, respectively. The observed pressure coefficients are much lower than those characteristic of the energy gap in GaN ( 40 meV/GPa) or the energy gap in InN ( 33 meV/GPa). This kind

  3. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  4. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  5. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore »to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  6. IEEE Energy2030 Atlanta, GA USA

    E-Print Network [OSTI]

    Gross, George

    of an aggregation of battery vehicles for the provision of frequency regulation ­ requiring very fast response timesIEEE Energy2030 Atlanta, GA USA 17-18 November, 2008 Design of a Conceptual Framework for the V2G in common is the batteries, which provide good storage capacity that can be effectively integrated

  7. 495 Tech Way NW Atlanta, GA 30318

    E-Print Network [OSTI]

    Li, Mo

    495 Tech Way NW Atlanta, GA 30318 404.385.0384 comments@energy.gatech.edu Copyright 2014 · Georgia concerns, low-cost, clean, secure energy solutions will be necessary to address our global energy needs and sustain our way of life. Georgia Tech Energy Innovations The Strategic Energy Institute's scientists

  8. Problem set 2: Constructing a nutrient budget for Bellingham Bay In recent years the concentration of dissolved oxygen in bottom water in Bellingham Bay has been

    E-Print Network [OSTI]

    Shull, David H.

    (NO3 ) was highest in the deep water entering Bellingham Bay from the Strait of Georgia. Ammonium was slightly lower than that in deep water (Table 1). However, in much of the surface water in Bellingham Bay Nooksack River water and deep water (Fig.2). Nitrite concentrations (NO2 ) were generally low. Water

  9. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  10. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

    E-Print Network [OSTI]

    it was discovered by Davydov et al.1 and con- firmed by independent studies2,3 that its band gap is small, EG InN =0 The conduction band offset at GaN/AlN interface was estimated as EQW=0.7 EG AlN -EG GaN =1918 meV. The nanoN/GaN/AlN QW. The depth of the nanogroove is calculated as E0=0.8 EG GaN -EG InxGa1-xN . The band gap of InxGa1

  11. SODAR DATA FROM OYSTER BAY AT WINYAH BAY NATIONAL ESTUARINE RESEARCH RESERVE

    SciTech Connect (OSTI)

    Nichols, R.; Kohn, J.; Rigas, N.; Boessneck, E.; Kress, E.; Gayes, P.

    2013-04-29

    The SecondWind Triton® is a SODAR (SOnic Detection And Ranging) sonic wind profiler (Triton® sodar) system capable of profiling the wind characteristics up to 200m above the instrument. SODAR systems transmit acoustic chirps into the atmosphere and measure the backscattered signal returned to the device. The primary source of acoustic scattering is variations in air temperature, which cause changes in the refractive index of sound. By measuring the Doppler?shifted frequency of these returned signals, the Triton® can calculate the wind’s speed and direction for the volume of air above the instrument, measured at ten fixed heights, known as station heights. The Triton® is specifically designed for the purpose of wind energy resource assessment as it can remotely capture wind data at heights above ground where wind turbine rotors operate. The measurements made include horizontal wind speed and direction, vertical wind speed, and turbulence. Other integrated sensors provide time and location via GPS, barometric pressure, humidity, and the tilt of the instrument. The study area is located east of Georgetown, South Carolina in North Inlet ? Winyah Bay National Estuarine Research Reserve. The monitoring period for data in this report begins 5/14/2009 9:30:00 AM EST and ends 8/2/2010 11:40:00 AM EST.

  12. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    epitaxial growth of indium gallium nitride (InGaN) layers capable of producing high-efficiency LEDs when combined with chip-on-board packaging techniques. The proposed...

  13. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lüth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8?×?10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  14. 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly ...

  15. Emission and Excitation Spectra of ZnO:Ga and ZnO:Ga,N Ceramics

    E-Print Network [OSTI]

    P. A. Rodnyi; I. V. Khodyuk; E. I. Gorokhova; S. B. Mikhrin; P. Dorenbos

    2010-09-07

    The spectral characteristics of ZnO:Ga and ZnO:Ga,N ceramics prepared by uniaxial hot pressing have been investigated. At room temperature, the edge (exciton) band at 3.12 eV dominates in the luminescence spectra of ZnO:Ga, while a wide luminescence band at 2.37 eV, which is likely to be due to zinc vacancies, is observed in the spectra of ZnO:Ga,N. Upon heating, the edge band maximum shifts to lower energies and the bandwidth increases. The extrapolated position of the edge-band maximum at zero temperature, Em(0) = 3.367 +/- 0.005 eV, is in agreement with the data for thin zinc oxide films. The luminescence excitation spectra in the range from 3 to 6.5 eV are reported and the mechanism of energy transfer to excitons and luminescence centers is considered.

  16. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Giddings, A. D.; Prosa, T. J.; Larson, D. J. [CAMECA Instruments, Inc., 5500 Nobel Drive, Madison, Wisconsin 53711 (United States); Mano, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  17. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgül Okur; Akdemir, Hande Günay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  18. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  19. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  20. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Haj?asz, M., E-mail: m.hajlasz@m2i.nl [Materials innovation institute (M2i), Mekelweg 2, 2628 CD, Delft (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); Gravesteijn, D. J. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Rietveld, F. J. R. [NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen (Netherlands); Schmitz, J. [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  1. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  2. Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes

    E-Print Network [OSTI]

    Cornelius S. Bausch; Aune Koitmäe; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

    2013-05-06

    We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

  3. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  4. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  5. Accurate characterization and improvement of GaAs microstrip attenuation 

    E-Print Network [OSTI]

    Carroll, James Mason

    1992-01-01

    Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

  6. Runaway Bay, Texas: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/ColoradoRemsenburg-Speonk, NewMichigan:Roxbury, Vermont:(RedirectedEasements ||Runaway Bay,

  7. South Bay, Florida: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing Capacity forSiliciumEnergy IncAshburnham, Massachusetts:Barrington,Bay,

  8. Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors

    E-Print Network [OSTI]

    Chung, Jinwook W. (Jinwook Will)

    2008-01-01

    In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

  9. An ecological study of the benthic macrofauna of Matagorda Bay, Texas 

    E-Print Network [OSTI]

    Marland, Frederick C

    1958-01-01

    . Mitchell's vork iu Nategorda Bay is of such interest that it vill be discussed Lu a later section, Iu 1905~ Moors (1907) studied the oyster bcttons of Natagorda Bay ? partieularIy Halfssen Beef. Tbs purpose of this and other Lurestlgations that followed... vas an attsupt tc inorease the produotion of oysters in the Texas bays. A fev years later, Rxee and Dauglade (1915) ascertained ths character of the oyster bede@ ecologioal factors, eneniss aui pestsy and usda suggestions to benefit the oyster...

  10. A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+

    E-Print Network [OSTI]

    McKittrick, Joanna

    A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

  11. Spectral measurement of electron antineutrino oscillation amplitude and frequency at Daya Bay

    E-Print Network [OSTI]

    Daya Bay Collaboration; F. P. An; A. B. Balantekin; H. R. Band; W. Beriguete; M. Bishai; S. Blyth; R. L. Brown; I. Butorov; G. F. Cao; J. Cao; R. Carr; Y. L. Chan; J. F. Chang; Y. Chang; C. Chasman; H. S. Chen; H. Y. Chen; S. J. Chen; S. M. Chen; X. C. Chen; X. H. Chen; Y. Chen; Y. X. Chen; Y. P. Cheng; J. J. Cherwinka; M. C. Chu; J. P. Cummings; J. de Arcos; Z. Y. Deng; Y. Y. Ding; M. V. Diwan; E. Draeger; X. F. Du; D. A. Dwyer; W. R. Edwards; S. R. Ely; J. Y. Fu; L. Q. Ge; R. Gill; M. Gonchar; G. H. Gong; H. Gong; Y. A. Gornushkin; W. Q. Gu; M. Y. Guan; X. H. Guo; R. W. Hackenburg; R. L. Hahn; G. H. Han; S. Hans; M. He; K. M. Heeger; Y. K. Heng; P. Hinrichs; yk. Hor; Y. B. Hsiung; B. Z. Hu; L. J. Hu; L. M. Hu; T. Hu; W. Hu; E. C. Huang; H. X. Huang; H. Z. Huang; X. T. Huang; P. Huber; G. Hussain; Z. Isvan; D. E. Jaffe; P. Jaffke; S. Jetter; X. L. Ji; X. P. Ji; H. J. Jiang; J. B. Jiao; R. A. Johnson; L. Kang; S. H. Kettell; M. Kramer; K. K. Kwan; M. W. Kwok; T. Kwok; W. C. Lai; W. H. Lai; K. Lau; L. Lebanowski; J. Lee; R. T. Lei; R. Leitner; A. Leung; J. K. C. Leung; C. A. Lewis; D. J. Li; F. Li; G. S. Li; Q. J. Li; W. D. Li; X. N. Li; X. Q. Li; Y. F. Li; Z. B. Li; H. Liang; C. J. Lin; G. L. Lin; S. K. Lin; Y. C. Lin; J. J. Ling; J. M. Link; L. Littenberg; B. R. Littlejohn; D. W. Liu; H. Liu; J. C. Liu; J. L. Liu; S. S. Liu; Y. B. Liu; C. Lu; H. Q. Lu; K. B. Luk; Q. M. Ma; X. B. Ma; X. Y. Ma; Y. Q. Ma; K. T. McDonald; M. C. McFarlane; R. D. McKeown; Y. Meng; I. Mitchell; Y. Nakajima; J. Napolitano; D. Naumov; E. Naumova; I. Nemchenok; H. Y. Ngai; W. K. Ngai; Z. Ning; J. P. Ochoa-Ricoux; A. Olshevski; S. Patton; V. Pec; J. C. Peng; L. E. Piilonen; L. Pinsky; C. S. J. Pun; F. Z. Qi; M. Qi; X. Qian; N. Raper; B. Ren; J. Ren; R. Rosero; B. Roskovec; X. C. Ruan; B. B. Shao; H. Steiner; G. X. Sun; J. L. Sun; Y. H. Tam; H. K. Tanaka; X. Tang; H. Themann; S. Trentalange; O. Tsai; K. V. Tsang; R. H. M. Tsang; C. E. Tull; Y. C. Tung; B. Viren; V. Vorobel; C. H. Wang; L. S. Wang; L. Y. Wang; L. Z. Wang; M. Wang; N. Y. Wang; R. G. Wang; W. Wang; W. W. Wang; X. Wang; Y. F. Wang; Z. Wang; Z. Wang; Z. M. Wang; D. M. Webber; H. Wei; Y. D. Wei; L. J. Wen; K. Whisnant; C. G. White; L. Whitehead; T. Wise; H. L. H. Wong; S. C. F. Wong; E. Worcester; Q. Wu; D. M. Xia; J. K. Xia; X. Xia; Z. Z. Xing; J. Xu; J. L. Xu; J. Y. Xu; Y. Xu; T. Xue; J. Yan; C. G. Yang; L. Yang; M. S. Yang; M. Ye; M. Yeh; Y. S. Yeh; B. L. Young; G. Y. Yu; J. Y. Yu; Z. Y. Yu; S. L. Zang; L. Zhan; C. Zhang; F. H. Zhang; J. W. Zhang; Q. M. Zhang; S. H. Zhang; Y. C. Zhang; Y. H. Zhang; Y. M. Zhang; Y. X. Zhang; Z. J. Zhang; Z. P. Zhang; Z. Y. Zhang; J. Zhao; Q. W. Zhao; Y. B. Zhao; L. Zheng; W. L. Zhong; L. Zhou; Z. Y. Zhou; H. L. Zhuang; J. H. Zou

    2014-01-15

    A measurement of the energy dependence of antineutrino disappearance at the Daya Bay Reactor Neutrino Experiment is reported. Electron antineutrinos ($\\overline{\

  12. The hunt for theta13 at the Daya Bay nuclear power plant

    E-Print Network [OSTI]

    Wei Wang; for the Daya Bay collaboration

    2009-10-23

    The Daya Bay reactor neutrino experiment is located at the Daya Bay nuclear power plant in Shenzhen, China. The experiment deploys eight "identical" antineutrino detectors to measure antineutrino fluxes from six 2.9 GW_{th} reactor cores in three underground experimental halls at different distances. The target zone of the Daya Bay detector is filled with 20 t 0.1% Gd doped LAB liquid scintillator. The baseline uncorrelated detector uncertainty is ~0.38% using current experimental techniques. Daya Bay can reach a sensitivity of <0.01 to $sin^2 2theta_{13}$ with baseline uncertainties after 3 years of data taking.

  13. The hunt for theta13 at the Daya Bay nuclear power plant

    E-Print Network [OSTI]

    Wang, Wei

    2009-01-01

    The Daya Bay reactor neutrino experiment is located at the Daya Bay nuclear power plant in Shenzhen, China. The experiment deploys eight "identical" antineutrino detectors to measure antineutrino fluxes from six 2.9 GW_{th} reactor cores in three underground experimental halls at different distances. The target zone of the Daya Bay detector is filled with 20 t 0.1% Gd doped LAB liquid scintillator. The baseline uncorrelated detector uncertainty is ~0.38% using current experimental techniques. Daya Bay can reach a sensitivity of <0.01 to $sin^2 2theta_{13}$ with baseline uncertainties after 3 years of data taking.

  14. Sandia Energy - Bay-Area National Labs Team to Tackle Long-Standing...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bay-Area National Labs Team to Tackle Long-Standing Automotive Hydrogen-Storage Challenge Home Energy Transportation Energy Facilities Capabilities News News & Events Research &...

  15. High-resolution pollutant transport in the San Pedro Bay of California

    E-Print Network [OSTI]

    Cohan, Alexander; Wu, Jun; Dabdub, Donald

    2011-01-01

    pollutant transport in the San Pedro Bay   of California California Institute of Technology (UCI–CIT) three– dimensional  atmospheric  chemical  transport 

  16. Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers

    E-Print Network [OSTI]

    Jalali. Bahram

    Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico optical, electrical, and spectral response characteristics of three-stack InAs/GaAs quantum dot solar

  17. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  18. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  19. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    solar cells are triple-junction concentrator devices, with each junction efficiently col- lecting subcell in a multijunction de- vice. GaAs0.66 P0.34 single-junction solar cells with Eg = 1.83 eV were56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar

  20. Avian Communities in Tidal Salt Marshes of San Francisco Bay: A Review of Functional Groups by Foraging Guild and Habitat Association

    E-Print Network [OSTI]

    2011-01-01

    report on the Cargill Salt Ponds. Senate select committee onartificial salt evaporation ponds of the San Francisco BayMA. 2005. South Bay salt ponds restoration project short-

  1. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  2. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  3. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arčs, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  4. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  5. Ecosystem under Pressure: Examining the Phytoplankton Community in the High Ballast Water Discharge Environment of Galveston Bay, Texas (USA) 

    E-Print Network [OSTI]

    Steichen, Jamie L

    2013-01-15

    . Dinoflagellates, capable of forming harmful algal blooms leading to fish and shellfish kills, are being transported to Galveston Bay via ballast water. Our results suggest that Galveston Bay is at risk for invasive species introductions via ballast water...

  6. Late Holocene Stratigraphy, Humboldt Bay, California: Evidence for Late Holocene Paleoseismicity of the Southern Cascadia Subduction Zone

    E-Print Network [OSTI]

    Valentine, David Wade

    1992-01-01

    the formation of the stratigraphy found in Humboldt Bay. .Discussion i ii iii iv y vi Stratigraphy . Mad River Slough—for the formation of the Stratigraphy found in Humboldt Bay.

  7. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  8. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  9. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  10. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  11. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  12. Ecosystem-scale Selenium Model for the San Francisco Bay-Delta Regional Ecosystem Restoration Implementation Plan

    E-Print Network [OSTI]

    Presser, Theresa S.; Luoma, Samuel N.

    2013-01-01

    experimental ponds. Water, Air, and Soil Pollution 62(1–2):Pollution [SFBRWQCB] California San Francisco Bay Regional Water

  13. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  14. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  15. Modeling Bed-Load Transport of Coarse Sediments in the Great Bay Estuary, New Hampshire.

    E-Print Network [OSTI]

    Modeling Bed-Load Transport of Coarse Sediments in the Great Bay Estuary, New Hampshire. A. Bilgili Hanover, NH 03755, U.S.A. 2 University of New Hampshire Ocean and Mechanical Engineering Departments River section of the Great Bay Estuary, New Hampshire, USA.- a well-mixed and geometrically complex

  16. Wastewater Discharge, Nutrient Loading, and Dissolved Oxygen Dynamics in a Shallow Texas Bay 

    E-Print Network [OSTI]

    Schroer, Lee Allen

    2014-05-07

    In Oso Bay, a wastewater treatment plant acts as a source of eutrophication and may have measureable impact on the health of the bay. The objectives of this study were to create a model for modeling dissolved oxygen concentrations over time...

  17. Environmental Research 105 (2007) 87100 The slow recovery of San Francisco Bay from the legacy of

    E-Print Network [OSTI]

    2007-01-01

    , Livermore, CA 94551, USA c Regional Water Quality Control Board, San Francisco Bay Region, 1515 Clay St of the Bay from these inputs and predict its future improvement. Legacy pesticides enter the water contaminated sediment deposits, and dredging and disposal of dredged material. Runoff from small

  18. THE SPAWNING CYCLE OF SOFT-SHELL CLAM, MYA ARENARIA, IN SAN FRANCISCO BAY

    E-Print Network [OSTI]

    to determine the spawning cycle. The spawning cycle was well synchronized among the four populations at this potential. Recently (1982), the digging of clams in San Fran- cisco Bay received official clearance harvesting. Prepared for the Association of Bay Area Governments, 171 p. ·Champion. D. 1982. Clam digging OK

  19. Time Series Measurements of Temperature, Current Velocity, and Sediment Resuspension in Saginaw Bay

    E-Print Network [OSTI]

    Time Series Measurements of Temperature, Current Velocity, and Sediment Resuspension in Saginaw Bay and verification. These measurements will be made as part of this project. Measurements of sediment resuspension sediment resuspension in the bay during the spring. Measurements of sediment resuspension are important

  20. THE ECOLOGICAL BOUNDARIES OF SIX CAROLINA BAYS: COMMUNITY COMPOSITION AND ECOTONE DISTRIBUTION

    E-Print Network [OSTI]

    Hutchens, John

    of Biology P.O. Box 261954 Coastal Carolina University Conway, South Carolina, USA 29528-6054 E-mail: Joluken rims of each of six Carolina bays in northeastern South Carolina to characterize the community gradientTHE ECOLOGICAL BOUNDARIES OF SIX CAROLINA BAYS: COMMUNITY COMPOSITION AND ECOTONE DISTRIBUTION

  1. Optimal Pollution Mitigation in Monterey Bay Based on Coastal Radar Data and Nonlinear

    E-Print Network [OSTI]

    Marsden, Jerrold

    Optimal Pollution Mitigation in Monterey Bay Based on Coastal Radar Data and Nonlinear Dynamics run-off which is a typical source of pollution in the bay. We show that a HF radar-based pollution release scheme using this flow structure reduces the impact of pollution on the coastal envi- ronment

  2. Prudhoe Bay Oil Production Optimization: Using Virtual intelligence Techniques, Stage One: Neural Model Building

    E-Print Network [OSTI]

    Mohaghegh, Shahab

    SPE 77659 Prudhoe Bay Oil Production Optimization: Using Virtual intelligence Techniques, Stage One, TX 75083-3836, U.S.A., fax 01-972-952-9435. Abstract Field data from the Prudhoe Bay oil field.998 respectively. This is the first phase in the development of a tool to maximize total field oil production

  3. Chlorinated pesticides, polychlorinated biphenyls, and dioxins in colonial nesting waterbirds of Galveston Bay, Texas 

    E-Print Network [OSTI]

    Frank, Donell Suzette

    1999-01-01

    the Houston Ship Channel, including control areas outside the bay. PCB 126 was highest in eggs of geotropic cormorants from Vingt-et-un and Smith Point Islands within Galveston Bay. 2,3,7,8 TCDD was the only dioxin detected in eggs from all locations within...

  4. Word Classification: An Experimental Approach with Nave Bayes ding@cs.umb.edu

    E-Print Network [OSTI]

    Ding, Wei

    Word Classification: An Experimental Approach with Naļve Bayes Wei Ding ding@cs.umb.edu University 77058 USA Abstract Word classification is of significant interest in the domain of natural language presents an experimental method using Naļve Bayes for word classification. The method is based on combing

  5. Bay Area Transit Agencies Propel Fuel Cell Buses Toward Commercialization (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2010-07-01

    This fact sheet describes the Zero Emission Bay Area (ZEBA) demonstration of the next generation of fuel cells buses. Several transit agencies in the San Francisco Bay Area are participating in demonstrating the largest single fleet of fuel cell buses in the United States.

  6. New York Harbor Chart 12334 New York Harbor Upper Bay and Narrows

    E-Print Network [OSTI]

    New York Harbor Chart 12334 ­ New York Harbor Upper Bay and Narrows Anchorage Chart Booklet, the nation's chartmaker #12;United States ­ East Coast NEW YORK ­ NEW JERSEY NEW YORK HARBOR UPPER BAY.noaa.gov/WarOf1812. #12;Because of its importance as a hub of international commerce, New York City served several

  7. SEISMIC PERFORMANCE LIMITS OF THE SKYWAY PIERS FOR THE NEW EAST BAY SPANS

    E-Print Network [OSTI]

    Hines, Eric

    -based criteria both for a functional evaluation earthquake (FEE) and for a safety evaluation earthquake (SEE) [2 conducted both to verify immediately the safety of the existing Skyway design and to sharpen the fundamental]. The new San Francisco-Oakland Bay Bridge (SFOBB) East Bay Spans were designed according to performance

  8. GaN based nanorods for solid state lighting

    SciTech Connect (OSTI)

    Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

    2012-04-01

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  9. West Bay Shore, New York: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia: Energy Resources Jump to:SearchWesley Hills, NewBabylon, NewBay

  10. The muon system of the Daya Bay Reactor antineutrino experiment

    E-Print Network [OSTI]

    Daya Bay Collaboration

    2014-11-28

    The Daya Bay experiment consists of functionally identical antineutrino detectors immersed in pools of ultrapure water in three well-separated underground experimental halls near two nuclear reactor complexes. These pools serve both as shields against natural, low-energy radiation, and as water Cherenkov detectors that efficiently detect cosmic muons using arrays of photomultiplier tubes. Each pool is covered by a plane of resistive plate chambers as an additional means of detecting muons. Design, construction, operation, and performance of these muon detectors are described.

  11. The Muon System of the Daya Bay Reactor Antineutrino Experiment

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    An, F. P.; Hackenburg, R. W.; Brown, R. E.; Chasman, C.; Dale, E.; Diwan, M. V.; Gill, R.; Hans, S.; Isvan, Z.; Jaffe, D. E.; Kettell, S. H.; Littenberg, L.; Pearson, C. E.; Qian, X.; Theman, H.; Viren, B.; Worcester, E.; Yeh, M.; Zhang, C.

    2015-02-01

    The Daya Bay experiment consists of functionally identical antineutrino detectors immersed in pools of ultrapure water in three well-separated underground experimental halls near two nuclear reactor complexes. These pools serve both as shields against natural, low-energy radiation, and as water Cherenkov detectors that efficiently detect cosmic muons using arrays of photomultiplier tubes. Each pool is covered by a plane of resistive plate chambers as an additional means of detecting muons. Design, construction, operation, and performance of these muon detectors are described. (auth)

  12. The Muon System of the Daya Bay Reactor Antineutrino Experiment

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    An, F. P.; Hackenburg, R. W.; Brown, R. E.; Chasman, C.; Dale, E.; Diwan, M. V.; Gill, R.; Hans, S.; Isvan, Z.; Jaffe, D. E.; et al

    2014-10-05

    The Daya Bay experiment consists of functionally identical antineutrino detectors immersed in pools of ultrapure water in three well-separated underground experimental halls near two nuclear reactor complexes. These pools serve both as shields against natural, low-energy radiation, and as water Cherenkov detectors that efficiently detect cosmic muons using arrays of photomultiplier tubes. Each pool is covered by a plane of resistive plate chambers as an additional means of detecting muons. Design, construction, operation, and performance of these muon detectors are described. (auth)

  13. Huntington Bay, New York: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas: Energy Resources JumpNewTexas: EnergyHunterdon County, NewHunting Valley,Bay, New

  14. Hampton Bays, New York: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynnMassachusetts: Energy Resources Jump to:Maine:Hampton Bays, New York:

  15. Mission Bay, Florida: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland: Energy ResourcesDec 2005Minnehaha County,EnergyII Geothermal1980)Bay, Florida:

  16. Palmetto Bay, Florida: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPIProtectio Program |View New Pages Recent ChangesEtPalmer, Massachusetts:Bay,

  17. East Bay Municipal Util Dist | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA Jump to:of the NationalDynetek EuropeEPG| OpenEXLEasley CombinedBay

  18. City of Sturgeon Bay, Wisconsin (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar EnergyLawler, IowaScottsboro,Kansas (Utility Company) JumpBay, Wisconsin

  19. Tampa Bay Area Ethanol Consortium | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EISTJ Automation Jump to: navigation, searchTalty, Texas: EnergyIncBay

  20. Bay County, Michigan: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminexInformationArkansas: Energy Resources JumpBay

  1. Bay Harbor Islands, Florida: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminexInformationArkansas: Energy Resources JumpBayHarbor Islands,

  2. Bay Head, New Jersey: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminexInformationArkansas: Energy Resources JumpBayHarbor

  3. Bay Hill, Florida: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminexInformationArkansas: Energy Resources JumpBayHarborHill,

  4. Coos Bay, Oregon: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company)| Open(Evans, EtInformationRoofCooperCoopersville,theBay,

  5. Cutler Bay, Florida: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (UtilityInstruments Inc Jump to: navigation, searchCut and Shoot, Texas:Bay,

  6. Morro Bay, California: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsourceII Jump to: navigation, searchsource History ViewMoeOhio:LightNew Jersey:Morro Bay,

  7. BayWa Sunways JV | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LIST OFAMERICA'S FUTURE.EnergyWoodenDateSAEngineering LLCBarner InvestmentBayWa

  8. GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a

    E-Print Network [OSTI]

    Atwater, Harry

    GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C, crack-free GaInP/GaAs double junction solar cells were grown by metal organic chemical vapor deposition with the world record efficiency is a metamorphic triple junction GaInP/GaAs/Ge cell.6 Alternatively, wafer

  9. Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    -emitting diodes (LEDs) are considered the new generation lighting sources due to their advantages in power Society of America OCIS codes: 230.3670, 230.5590, 160.6000. Nitride-based high-power light devoted to the development of high-brightness GaN-based LEDs [3­5]. Lateral hole spreading is one

  10. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  11. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  12. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  13. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  14. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  15. Demonstration of a semipolar (10(1)over-bar(3)over-bar) InGaN/GaN green light emitting diode

    E-Print Network [OSTI]

    2005-01-01

    InGaN / GaN green light emitting diode R. Sharma, a? P. M.green ??525 nm? light emitting diode ?LED?. The fabricated

  16. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19?}m{sup ?2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  17. User's guide for BAYES: a general-purpose computer code for fitting a functional form to experimental data

    SciTech Connect (OSTI)

    Larson, N M

    1982-08-01

    This report is intended as a user's manual for a general-purpose computer program BAYES to solve Bayes equations for updating parameter values, uncertainties, and correlations. Bayes equations are derived from Bayes theorem, using linearity and normality assumptions. The method of solution is described, and details are given for adapting the code for a specific purpose. Numerous examples are given, including problem description and solution method, FORTRAN coding, and sample input and output. A companion code LEAST, which solves the usual least-squares equations rather than Bayes equations but which encourages nondiagonal data weighting, is also described.

  18. An Improved Measurement of Electron Antineutrino Disappearance at Daya Bay

    E-Print Network [OSTI]

    David M. Webber; for the Daya Bay Collaboration

    2012-11-07

    The theory of neutrino oscillations explains changes in neutrino flavor, count rates, and spectra from solar, atmospheric, accelerator, and reactor neutrinos. These oscillations are characterized by three mixing angles and two mass-squared differences. The solar mixing angle, {\\theta}_12, and the atmospheric mixing angle, {\\theta}_23, have been well measured, but until recently the neutrino mixing angle {\\theta}_13 was not well known. The Daya Bay experiment, located northeast of Hong Kong at the Guangdong Nuclear Power Complex in China, has made a precise measurement of electron antineutrino disappearance using six functionally-identical gadolinium-doped liquid scintillator-based detectors at three sites with distances between 364 and 1900 meters from six reactor cores. This proceeding describes the Daya Bay updated result, using 127 days of good run time collected between December 24, 2011 and May 11, 2012. For the far site, the ratio of the observed number of events to the expected number of events assuming no neutrino oscillation is 0.944 +/- 0.007(stat) +/- 0.003(syst). A fit for {\\theta}_13 in the three-neutrino framework yields sin^2 2{\\theta}_13 = 0.089 +/- 0.010(stat) +/- 0.005(syst).

  19. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  20. High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

    SciTech Connect (OSTI)

    Chang, Chiao-Yun; Li, Hen; Lu, Tien-Chang, E-mail: timtclu@mail.nctu.edu.tw [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300 (China)

    2014-03-03

    In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20?mA and a 27.0% efficiency droop at 100?mA (corresponding to a current density of 69?A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.

  1. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  2. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  3. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  4. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  5. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

    E-Print Network [OSTI]

    sound velocity in GaN. The cut off wave vector is given by where NA is the Avogadro number, is the mass

  6. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoē, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  7. Istanbul,Turkey & Atlanta, GA Istanbul,Turkey

    E-Print Network [OSTI]

    Frantz, Kyle J.

    Istanbul,Turkey & Atlanta, GA Istanbul,Turkey & Atlanta, GA 2012 Media, Journalism and Business for departure to Istanbul,Turkey Day 9 Depart for Istanbul; guided cultural visit upon arrival; group dinner Day business leaders; site visits to local universities Day 18 UPS and the value of logistics inTurkey Day 19

  8. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  9. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-?m transport was observed within an electron spin lifetime of 1.2?ns at room temperature when using an in-plane electric field of 1.75?kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  10. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  11. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  12. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  13. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  14. Development of a Hydrodynamic and Transport model of Bellingham Bay in Support of Nearshore Habitat Restoration

    SciTech Connect (OSTI)

    Wang, Taiping; Yang, Zhaoqing; Khangaonkar, Tarang

    2010-04-22

    In this study, a hydrodynamic model based on the unstructured-grid finite volume coastal ocean model (FVCOM) was developed for Bellingham Bay, Washington. The model simulates water surface elevation, velocity, temperature, and salinity in a three-dimensional domain that covers the entire Bellingham Bay and adjacent water bodies, including Lummi Bay, Samish Bay, Padilla Bay, and Rosario Strait. The model was developed using Pacific Northwest National Laboratory’s high-resolution Puget Sound and Northwest Straits circulation and transport model. A sub-model grid for Bellingham Bay and adjacent coastal waters was extracted from the Puget Sound model and refined in Bellingham Bay using bathymetric light detection and ranging (LIDAR) and river channel cross-section data. The model uses tides, river inflows, and meteorological inputs to predict water surface elevations, currents, salinity, and temperature. A tidal open boundary condition was specified using standard National Oceanic and Atmospheric Administration (NOAA) predictions. Temperature and salinity open boundary conditions were specified based on observed data. Meteorological forcing (wind, solar radiation, and net surface heat flux) was obtained from NOAA real observations and National Center for Environmental Prediction North American Regional Analysis outputs. The model was run in parallel with 48 cores using a time step of 2.5 seconds. It took 18 hours of cpu time to complete 26 days of simulation. The model was calibrated with oceanographic field data for the period of 6/1/2009 to 6/26/2009. These data were collected specifically for the purpose of model development and calibration. They include time series of water-surface elevation, currents, temperature, and salinity as well as temperature and salinity profiles during instrument deployment and retrieval. Comparisons between model predictions and field observations show an overall reasonable agreement in both temporal and spatial scales. Comparisons of root mean square error values for surface elevation, velocity, temperature, and salinity time series are 0.11 m, 0.10 m/s, 1.28oC, and 1.91 ppt, respectively. The model was able to reproduce the salinity and temperature stratifications inside Bellingham Bay. Wetting and drying processes in tidal flats in Bellingham Bay, Samish Bay, and Padilla Bay were also successfully simulated. Both model results and observed data indicated that water surface elevations inside Bellingham Bay are highly correlated to tides. Circulation inside the bay is weak and complex and is affected by various forcing mechanisms, including tides, winds, freshwater inflows, and other local forcing factors. The Bellingham Bay model solution was successfully linked to the NOAA oil spill trajectory simulation model “General NOAA Operational Modeling Environment (GNOME).” Overall, the Bellingham Bay model has been calibrated reasonably well and can be used to provide detailed hydrodynamic information in the bay and adjacent water bodies. While there is room for further improvement with more available data, the calibrated hydrodynamic model provides useful hydrodynamic information in Bellingham Bay and can be used to support sediment transport and water quality modeling as well as assist in the design of nearshore restoration scenarios.

  15. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  16. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect (OSTI)

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  17. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  18. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ) In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells

  19. Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns

    E-Print Network [OSTI]

    Jahns, Jürgen

    Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating and a saturation of the optical output power at high injection currents. It is shown that the optical power

  20. Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors

    E-Print Network [OSTI]

    Florida, University of

    , creating both electron traps and increasing electron tunneling through the defect states [4Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron 2011 a b s t r a c t AlGaN/GaN High Electron Mobility Transistors were found to exhibit a negative

  1. Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat

    E-Print Network [OSTI]

    Shepelyansky, Dima

    Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

  2. Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal

    E-Print Network [OSTI]

    Ozbay, Ekmel

    between GaN and a sapphire substrate, the dislocation scattering mechanism and the electron spillover

  3. Nature, Science, Bayes' Theorem, and the Whole of Reality

    E-Print Network [OSTI]

    Alexanian, Moorad

    2015-01-01

    A fundamental problem in science is how to make logical inferences from scientific data. Mere data does not suffice since additional information is necessary to select a domain of models or hypotheses and thus determine the likelihood of each model or hypothesis. Thomas Bayes' Theorem relates the data and prior information to posterior probabilities associated with differing models or hypotheses and thus is useful in identifying the roles played by the known data and the assumed prior information when making inferences. Scientists, philosophers, and theologians accumulate knowledge when analyzing different aspects of reality and search for particular hypotheses or models to fit their respective subject matters. Of course, a main goal is then to integrate all kinds of knowledge into an all-encompassing worldview that would describe the whole of reality.

  4. Observation of electron-antineutrino disappearance at Daya Bay

    E-Print Network [OSTI]

    F. P. An; J. Z. Bai; A. B. Balantekin; H. R. Band; D. Beavis; W. Beriguete; M. Bishai; S. Blyth; K. Boddy; R. L. Brown; B. Cai; G. F. Cao; J. Cao; R. Carr; W. T. Chan; J. F. Chang; Y. Chang; C. Chasman; H. S. Chen; H. Y. Chen; S. J. Chen; S. M. Chen; X. C. Chen; X. H. Chen; X. S. Chen; Y. Chen; Y. X. Chen; J. J. Cherwinka; M. C. Chu; J. P. Cummings; Z. Y. Deng; Y. Y. Ding; M. V. Diwan; L. Dong; E. Draeger; X. F. Du; D. A. Dwyer; W. R. Edwards; S. R. Ely; S. D. Fang; J. Y. Fu; Z. W. Fu; L. Q. Ge; V. Ghazikhanian; R. L. Gill; J. Goett; M. Gonchar; G. H. Gong; H. Gong; Y. A. Gornushkin; L. S. Greenler; W. Q. Gu; M. Y. Guan; X. H. Guo; R. W. Hackenburg; R. L. Hahn; S. Hans; M. He; Q. He; W. S. He; K. M. Heeger; Y. K. Heng; P. Hinrichs; T. H. Ho; Y. K. Hor; Y. B. Hsiung; B. Z. Hu; T. Hu; T. Hu; H. X. Huang; H. Z. Huang; P. W. Huang; X. Huang; X. T. Huang; P. Huber; Z. Isvan; D. E. Jaffe; S. Jetter; X. L. Ji; X. P. Ji; H. J. Jiang; W. Q. Jiang; J. B. Jiao; R. A. Johnson; L. Kang; S. H. Kettell; M. Kramer; K. K. Kwan; M. W. Kwok; T. Kwok; C. Y. Lai; W. C. Lai; W. H. Lai; K. Lau; L. Lebanowski; J. Lee; M. K. P. Lee; R. Leitner; J. K. C. Leung; K. Y. Leung; C. A. Lewis; B. Li; F. Li; G. S. Li; J. Li; Q. J. Li; S. F. Li; W. D. Li; X. B. Li; X. N. Li; X. Q. Li; Y. Li; Z. B. Li; H. Liang; J. Liang; C. J. Lin; G. L. Lin; S. K. Lin; S. X. Lin; Y. C. Lin; J. J. Ling; J. M. Link; L. Littenberg; B. R. Littlejohn; B. J. Liu; C. Liu; D. W. Liu; H. Liu; J. C. Liu; J. L. Liu; S. Liu; X. Liu; Y. B. Liu; C. Lu; H. Q. Lu; A. Luk; K. B. Luk; T. Luo; X. L. Luo; L. H. Ma; Q. M. Ma; X. B. Ma; X. Y. Ma; Y. Q. Ma; B. Mayes; K. T. McDonald; M. C. McFarlane; R. D. McKeown; Y. Meng; D. Mohapatra; J. E. Morgan; Y. Nakajima; J. Napolitano; D. Naumov; I. Nemchenok; C. Newsom; H. Y. Ngai; W. K. Ngai; Y. B. Nie; Z. Ning; J. P. Ochoa-Ricoux; D. Oh; A. Olshevski; A. Pagac; S. Patton; C. Pearson; V. Pec; J. C. Peng; L. E. Piilonen; L. Pinsky; C. S. J. Pun; F. Z. Qi; M. Qi; X. Qian; N. Raper; R. Rosero; B. Roskovec; X. C. Ruan; B. Seilhan; B. B. Shao; K. Shih; H. Steiner; P. Stoler; G. X. Sun; J. L. Sun; Y. H. Tam; H. K. Tanaka; X. Tang; H. Themann; Y. Torun; S. Trentalange; O. Tsai; K. V. Tsang; R. H. M. Tsang; C. Tull; B. Viren; S. Virostek; V. Vorobel; C. H. Wang; L. S. Wang; L. Y. Wang; L. Z. Wang; M. Wang; N. Y. Wang; R. G. Wang; T. Wang; W. Wang; X. Wang; X. Wang; Y. F. Wang; Z. Wang; Z. Wang; Z. M. Wang; D. M. Webber; Y. D. Wei; L. J. Wen; D. L. Wenman; K. Whisnant; C. G. White; L. Whitehead; C. A. Whitten Jr.; J. Wilhelmi; T. Wise; H. C. Wong; H. L. H. Wong; J. Wong; E. T. Worcester; F. F. Wu; Q. Wu; D. M. Xia; S. T. Xiang; Q. Xiao; Z. Z. Xing; G. Xu; J. Xu; J. Xu; J. L. Xu; W. Xu; Y. Xu; T. Xue; C. G. Yang; L. Yang; M. Ye; M. Yeh; Y. S. Yeh; K. Yip; B. L. Young; Z. Y. Yu; L. Zhan; C. Zhang; F. H. Zhang; J. W. Zhang; Q. M. Zhang; K. Zhang; Q. X. Zhang; S. H. Zhang; Y. C. Zhang; Y. H. Zhang; Y. X. Zhang; Z. J. Zhang; Z. P. Zhang; Z. Y. Zhang; J. Zhao; Q. W. Zhao; Y. B. Zhao; L. Zheng; W. L. Zhong; L. Zhou; Z. Y. Zhou; H. L. Zhuang; J. H. Zou

    2012-04-02

    The Daya Bay Reactor Neutrino Experiment has measured a non-zero value for the neutrino mixing angle $\\theta_{13}$ with a significance of 5.2 standard deviations. Antineutrinos from six 2.9 GW$_{\\rm th}$ reactors were detected in six antineutrino detectors deployed in two near (flux-weighted baseline 470 m and 576 m) and one far (1648 m) underground experimental halls. With a 43,000 ton-GW_{\\rm th}-day livetime exposure in 55 days, 10416 (80376) electron antineutrino candidates were detected at the far hall (near halls). The ratio of the observed to expected number of antineutrinos at the far hall is $R=0.940\\pm 0.011({\\rm stat}) \\pm 0.004({\\rm syst})$. A rate-only analysis finds $\\sin^22\\theta_{13}=0.092\\pm 0.016({\\rm stat})\\pm0.005({\\rm syst})$ in a three-neutrino framework.

  5. Search for a Light Sterile Neutrino at Daya Bay

    E-Print Network [OSTI]

    F. P. An; A. B. Balantekin; H. R. Band; W. Beriguete; M. Bishai; S. Blyth; I. Butorov; G. F. Cao; J. Cao; Y. L. Chan; J. F. Chang; L. C. Chang; Y. Chang; C. Chasman; H. Chen; Q. Y. Chen; S. M. Chen; X. Chen; X. Chen; Y. X. Chen; Y. Chen; Y. P. Cheng; J. J. Cherwinka; M. C. Chu; J. P. Cummings; J. de Arcos; Z. Y. Deng; Y. Y. Ding; M. V. Diwan; E. Draeger; X. F. Du; D. A. Dwyer; W. R. Edwards; S. R. Ely; J. Y. Fu; L. Q. Ge; R. Gill; M. Gonchar; G. H. Gong; H. Gong; M. Grassi; W. Q. Gu; M. Y. Guan; X. H. Guo; R. W. Hackenburg; G. H. Han; S. Hans; M. He; K. M. Heeger; Y. K. Heng; P. Hinrichs; Y. K. Hor; Y. B. Hsiung; B. Z. Hu; L. M. Hu; L. J. Hu; T. Hu; W. Hu; E. C. Huang; H. Huang; X. T. Huang; P. Huber; G. Hussain; Z. Isvan; D. E. Jaffe; P. Jaffke; K. L. Jen; S. Jetter; X. P. Ji; X. L. Ji; H. J. Jiang; J. B. Jiao; R. A. Johnson; L. Kang; S. H. Kettell; M. Kramer; K. K. Kwan; M. W. Kwok; T. Kwok; W. C. Lai; K. Lau; L. Lebanowski; J. Lee; R. T. Lei; R. Leitner; A. Leung; J. K. C. Leung; C. A. Lewis; D. J. Li; F. Li; G. S. Li; Q. J. Li; W. D. Li; X. N. Li; X. Q. Li; Y. F. Li; Z. B. Li; H. Liang; C. J. Lin; G. L. Lin; P. Y. Lin; S. K. Lin; Y. C. Lin; J. J. Ling; J. M. Link; L. Littenberg; B. R. Littlejohn; D. W. Liu; H. Liu; J. L. Liu; J. C. Liu; S. S. Liu; Y. B. Liu; C. Lu; H. Q. Lu; K. B. Luk; Q. M. Ma; X. Y. Ma; X. B. Ma; Y. Q. Ma; K. T. McDonald; M. C. McFarlane; R. D. McKeown; Y. Meng; I. Mitchell; J. Monari Kebwaro; Y. Nakajima; J. Napolitano; D. Naumov; E. Naumova; I. Nemchenok; H. Y. Ngai; Z. Ning; J. P. Ochoa-Ricoux; A. Olshevski; S. Patton; V. Pec; J. C. Peng; L. E. Piilonen; L. Pinsky; C. S. J. Pun; F. Z. Qi; M. Qi; X. Qian; N. Raper; B. Ren; J. Ren; R. Rosero; B. Roskovec; X. C. Ruan; B. B. Shao; H. Steiner; G. X. Sun; J. L. Sun; Y. H. Tam; X. Tang; H. Themann; K. V. Tsang; R. H. M. Tsang; C. E. Tull; Y. C. Tung; B. Viren; V. Vorobel; C. H. Wang; L. S. Wang; L. Y. Wang; M. Wang; N. Y. Wang; R. G. Wang; W. Wang; W. W. Wang; X. Wang; Y. F. Wang; Z. Wang; Z. Wang; Z. M. Wang; D. M. Webber; H. Y. Wei; Y. D. Wei; L. J. Wen; K. Whisnant; C. G. White; L. Whitehead; T. Wise; H. L. H. Wong; S. C. F. Wong; E. Worcester; Q. Wu; D. M. Xia; J. K. Xia; X. Xia; Z. Z. Xing; J. Y. Xu; J. L. Xu; J. Xu; Y. Xu; T. Xue; J. Yan; C. C. Yang; L. Yang; M. S. Yang; M. T. Yang; M. Ye; M. Yeh; Y. S. Yeh; B. L. Young; G. Y. Yu; J. Y. Yu; Z. Y. Yu; S. L. Zang; B. Zeng; L. Zhan; C. Zhang; F. H. Zhang; J. W. Zhang; Q. M. Zhang; Q. Zhang; S. H. Zhang; Y. C. Zhang; Y. M. Zhang; Y. H. Zhang; Y. X. Zhang; Z. J. Zhang; Z. Y. Zhang; Z. P. Zhang; J. Zhao; Q. W. Zhao; Y. Zhao; Y. B. Zhao; L. Zheng; W. L. Zhong; L. Zhou; Z. Y. Zhou; H. L. Zhuang; J. H. Zou

    2014-10-08

    A search for light sterile neutrino mixing was performed with the first 217 days of data from the Daya Bay Reactor Antineutrino Experiment. The experiment's unique configuration of multiple baselines from six 2.9~GW$_{\\rm th}$ nuclear reactors to six antineutrino detectors deployed in two near (effective baselines 512~m and 561~m) and one far (1579~m) underground experimental halls makes it possible to test for oscillations to a fourth (sterile) neutrino in the $10^{\\rm -3}~{\\rm eV}^{2} < |\\Delta m_{41}^{2}| < 0.3~{\\rm eV}^{2}$ range. The relative spectral distortion due to electron antineutrino disappearance was found to be consistent with that of the three-flavor oscillation model. The derived limits on $\\sin^22\\theta_{14}$ cover the $10^{-3}~{\\rm eV}^{2} \\lesssim |\\Delta m^{2}_{41}| \\lesssim 0.1~{\\rm eV}^{2}$ region, which was largely unexplored.

  6. Atomistic description of the electronic structure of InxGa1xAs alloys and InAsGaAs superlattices

    E-Print Network [OSTI]

    Kent, Paul

    quantum-wells15,20 (InxGa1 xAs)n /InP on InP and (InxGa1 xAs)n /GaAs on GaAs, and v GaAs-embedded InAs quantum dots.21­23 We wish to provide a uniform the- oretical description of the electronic structure-period dependence of the band offsets and interband transitions of InAs/GaAs systems on InP and GaAs substrates. DOI

  7. Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 m; accepted 3 June 2013; published online 19 June 2013) InGaN/GaN light-emitting diodes (LEDs) with graded , which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which

  8. Low-frequency noise in GaNAlGaN heterostructure field-effect transistors at cryogenic temperatures

    E-Print Network [OSTI]

    Pala, Nezih

    that the 1/f noise in GaN/AlGaN HFETs might be caused by electron tunneling from the channel to the traps was practically independent of the frequency of analysis. The model linking this maximum to the electron tunneling Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics

  9. Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

    SciTech Connect (OSTI)

    Spitzer, M.B.; Vernon, S.M.; Wolfson, R.G.; Tobin, S.P.

    1984-01-01

    The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

  10. Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

  11. GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

    E-Print Network [OSTI]

    be well suited for exploitation of long wavelength quantum dot and dilute nitride technology, resulting in single lateral mode emission from an In0.17Ga0.83As double quantum well laser. Introduction: Lasers based on the GaAs materials system offer advan- tages over their InP counterparts, such as the use

  12. Improved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering by nanoparticles

    E-Print Network [OSTI]

    Yu, Edward T.

    of QDs in the context of our work is attractive for achieving long wavelength absorption in solar cells enhancement at all infrared wave- lengths in the device photocurrent spectrum. Epitaxial layer structuresImproved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering

  13. Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

  14. SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

    E-Print Network [OSTI]

    Florida, University of

    for spacecraft and other long-term sensing applications. However, hydrogen is a dangerous gas for storage for monitoring leakage of hydrogen storage equipment and fuel tanks for spacecraft and hydrogen fuel cellSnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

  15. Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations 

    E-Print Network [OSTI]

    Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

    2007-01-01

    A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

  16. DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS

    E-Print Network [OSTI]

    Honsberg, Christiana

    photovoltaic efficiency of 39% at 236 suns is achieved by a triple-junction GaInP- GaInAs-Ge tandem solar cell [1]. While the achievable efficiency of triple-junction tandem solar cells is restricted to about 40% [2], modeling results show that a tandem solar cell of five junctions or greater, or an equivalent

  17. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect (OSTI)

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  18. Carsharing Parking Policy: A Review of North American Practices and San Francisco Bay Area Case Study

    E-Print Network [OSTI]

    Shaheen, Susan; Cohen, Adam P.; Martin, Elliot

    2010-01-01

    Salt Lake City. Free Metered Parking for “Green Vehicles. ”www.slcgov.com/Transportation/Parking/green.htm AccessedAccessed June 24, 2009. 27. Parking. San Francisco Bay Area

  19. Topographic and Base-level Control on Back-Barrier Lagoon Evolution: West Galveston Bay, TX 

    E-Print Network [OSTI]

    Laverty, Paul H

    2014-12-02

    that flow into Chocolate Bay, and formed the basal surface of the accommodation available for Holocene infill. Radiocarbon dating of salient lithologic and seismic transitions in a few key cores revealed that several flooding events related to Holocene sea...

  20. Ground penetrating radar characterization of wood piles and the water table in Back Bay, Boston

    E-Print Network [OSTI]

    LeFranēois, Suzanne O'Neil, 1980-

    2003-01-01

    Ground penetrating radar (GPR) surveys are performed to determine the depth to the water table and the tops of wood piles beneath a residential structure at 122 Beacon Street in Back Bay, Boston. The area of Boston known ...

  1. Review: Logistic regression, Gaussian nave Bayes, linear regression, and their connections

    E-Print Network [OSTI]

    Mitchell, Tom

    Review: Logistic regression, Gaussian naļve Bayes, linear regression, and their connections Yi, and feature selection #12;Outline Logistic regression Decision surface (boundary) of classifiers Generative vs. discriminative classifiers Linear regression Bias-variance decomposition and tradeoff

  2. Antecedent Geologic Controls on the Distribution of Oyster Reefs in Copano Bay, Texas 

    E-Print Network [OSTI]

    Piper, Erin Alynn

    2011-08-08

    in June and July 2007. Surficial sediment analysis confirms that the recent sedimentation in Copano Bay is comprised of mostly estuarine mud with little sand or shell, large extents of oyster reefs and smaller areas of sand. Seismic stratigraphy analyses...

  3. Organic Matter Analysis of Sediments from Simpson Bay, Alaska using Elemental, Stable Isotopic, and Molecular Signatures 

    E-Print Network [OSTI]

    Pondell, Christina

    2008-08-19

    Sediment samples from Simpson Bay, Alaska were analyzed to determine the influence of earthquake events on the accumulated organic matter. Radiochemical analysis of 210Pb activity in the sediment dated the cores and determined the depths...

  4. Spatial trends in community and health-related characteristics of Galveston Bay oyster reefs 

    E-Print Network [OSTI]

    Song, Junggeun

    1994-01-01

    The spatial trends in the oyster community and healthrelated variables for Galveston Bay oyster reefs indicated that some other factors in addition to salinity are major structuring forces. Three different directional trends were found including one...

  5. iSAM2: Incremental smoothing and mapping using the Bayes tree

    E-Print Network [OSTI]

    Kaess, Michael

    We present a novel data structure, the Bayes tree, that provides an algorithmic foundation enabling a better understanding of existing graphical model inference algorithms and their connection to sparse matrix factorization ...

  6. Age and growth of southern flounder (Paralichthys lethostigma) from Matagorda Bay, Texas 

    E-Print Network [OSTI]

    Stunz, Gregory Wayne

    1995-01-01

    Estimates of age and growth of southern flounder (Paralichthys lethostigma) from Matagorda Bay, Texas were made by analyzing thin sections of otoliths (sagittae) from 892 specimens collected along the Texas coast from May 1992 to January 1995...

  7. Phosphorus Cycling in the Red Tide Incubator Region of Monterey Bay in Response to Upwelling

    E-Print Network [OSTI]

    Mackey, Katherine R. M; Mioni, Cecile E; Ryan, John P; Paytan, Adina

    2012-01-01

    of C. balechii from the RTI region of Monterey Bay differsThe red tide incubator (RTI) is a persistent feature ofspecies that incubate in the RTI may cause harmful effects

  8. Successful Application of Heat Pumps to a DHC System in the Tokyo Bay Area 

    E-Print Network [OSTI]

    Yanagihara, R.; Okagaki, A.

    2006-01-01

    The Harumi-Island District Heating & Cooling (DHC), which is located in the Tokyo Bay area, introduced the heat pump and thermal storage system with the aim of achieving minimum energy consumption, minimum environmental load, and maximum economical...

  9. Guidelines for left-turn bays at unsignalized access locations on arterial roadways 

    E-Print Network [OSTI]

    Hawley, Patrick Emmett

    1994-01-01

    It has long been recognized that effective access management along arterial streets can alleviate traffic congestion. A major goal within access management is to limit the speed differential between turning and through vehicles. Left-turn bays...

  10. Vegetation and sediment characteristics of created and natural Spartina alterniflora marshes in Lower Galveston Bay, Texas 

    E-Print Network [OSTI]

    Albertson, Andrea Kai

    1998-01-01

    Five natural and ten created Spartina altemiflora marshes in the Lower Galveston Bay System, Texas, were compared to determine if there were significantly different vegetative and sediment characteristics associated with ...

  11. Current Perspectives on the Physical and Biological Processes of Humboldt Bay

    E-Print Network [OSTI]

    Schlosser, S. C.; Rasmussen, R.

    2007-01-01

    Spit, which had absorbed much of the wave energy. Once theseharbor entrance deepened, wave energy came into the bay andand refocusing wave energy that, in turn, increases risk to

  12. Increase in the Intensity of Postmonsoon Bay of Bengal Tropical Cyclones

    SciTech Connect (OSTI)

    Balaguru, Karthik; Taraphdar, Sourav; Leung, Lai-Yung R.; Foltz, Gregory R.

    2014-05-28

    The post-monsoon (October-November) tropical cyclone (TC) season in the Bay of Bengal has spawned many of the deadliest storms in recorded history. Here it is shown that the intensity of post-monsoon Bay of Bengal TCs, and the contribution of major TCs to total TC power, increased during 1981-2010. It is found that changes in environmental parameters are responsible for the observed increases in TC intensity. Increases in sea surface temperature and upper ocean heat content made the ocean more conducive to TC development, while enhanced convective instability made the atmosphere more favorable for the growth of TCs. The largest changes in the atmosphere and ocean occurred in the eastern Bay of Bengal, where nearly all major TCs form. These changes are part of positive linear trends, suggesting that the intensity of post-monsoon Bay of Bengal TCs may continue to increase in the future.

  13. Hydro-Ecologic Responses to Land Use in Small Urbanizing Watersheds Within the Chesapeake Bay

    E-Print Network [OSTI]

    Gruner, Daniel S.

    Hydro-Ecologic Responses to Land Use in Small Urbanizing Watersheds Within the Chesapeake Bay. The consequences for both the hydrology and 41 #12;42 HYDRO-ECOLOGIC RESPONSES TO LAND USE IN SMALL URBANIZING

  14. Habitat associations and photo-identification of sea otters in Simpson Bay, Prince William Sound, Alaska 

    E-Print Network [OSTI]

    Gilkinson, Andrea Karin

    2006-04-12

    Habitat associations of sea otters during resting and feeding were investigated in Simpson Bay, Prince William Sound, Alaska during the summer months of 2001-2003. Sea otter locations collected during boat surveys were overlaid on bathymetry...

  15. The Association of Virulent Vibrio Spp. Bacteria on Gafftopsail and Hardhead Catfish in Galveston Bay 

    E-Print Network [OSTI]

    Gilbert, Leslie Deanne

    2011-10-21

    Vibrio vulnificus (Vv) and V. parahaemolyticus (Vp) are gram negative, halophilic bacteria that occur naturally in estuarine waters of Galveston Bay. Both bacteria have the potential to cause infections in humans either via consumption or direct...

  16. 13 OctOber 2013 Mission Bay Conference Center, San Francisco, USA

    E-Print Network [OSTI]

    Kaski, Samuel

    1Ā­3 OctOber 2013 Mission Bay Conference Center, San Francisco, USA www.beyond-the-genome.com Beyond the Genome 2013 #12;2 1Ā­3 OctOber 2013 Mission Bay Conference Center, San Francisco, USA www.beyond-the-genome.com Beyond the Genome 2013 Exhibition and sponsorship Nick Moss BioMed Central T: +44 (0)20 3192 2723 E: nick

  17. An ecological study of an oyster population, including selected associated organisms in West Bay, Galveston, Texas 

    E-Print Network [OSTI]

    Gillard, Robert Moore

    1969-01-01

    AN ECOLOGICAL STUDY OF AN OYSTER POPULATION, INCLUDING SELECTED ASSOCIATED ORGANISMS IN WEST BAY, GALVESTON, TEXAS A Thesis ROBERT MOORE GILLARD Subri t ted to the Graduate College o f Texas ASM University in partia3 fulfillment... of the requiresent for the deBree c f MASTER OF SCIENCL' May 1969 Major Szhject: Ma iac Bio' ogy AN ECOLOGICAL STUDY OF AN OYSTER POPULATION, INCLUDING SELECTED ASSOCIATED ORGANISMS IN WEST BAY, GALVESTON, TEXAS A Thesis by ROBERT MOORE GILLARD Approved...

  18. BayeSED: A GENERAL APPROACH TO FITTING THE SPECTRAL ENERGY DISTRIBUTION OF GALAXIES

    SciTech Connect (OSTI)

    Han, Yunkun; Han, Zhanwen, E-mail: hanyk@ynao.ac.cn, E-mail: zhanwenhan@ynao.ac.cn [Yunnan Observatories, Chinese Academy of Sciences, Kunming, 650011 (China)

    2014-11-01

    We present a newly developed version of BayeSED, a general Bayesian approach to the spectral energy distribution (SED) fitting of galaxies. The new BayeSED code has been systematically tested on a mock sample of galaxies. The comparison between the estimated and input values of the parameters shows that BayeSED can recover the physical parameters of galaxies reasonably well. We then applied BayeSED to interpret the SEDs of a large K{sub s} -selected sample of galaxies in the COSMOS/UltraVISTA field with stellar population synthesis models. Using the new BayeSED code, a Bayesian model comparison of stellar population synthesis models has been performed for the first time. We found that the 2003 model by Bruzual and Charlot, statistically speaking, has greater Bayesian evidence than the 2005 model by Maraston for the K{sub s} -selected sample. In addition, while setting the stellar metallicity as a free parameter obviously increases the Bayesian evidence of both models, varying the initial mass function has a notable effect only on the Maraston model. Meanwhile, the physical parameters estimated with BayeSED are found to be generally consistent with those obtained using the popular grid-based FAST code, while the former parameters exhibit more natural distributions. Based on the estimated physical parameters of the galaxies in the sample, we qualitatively classified the galaxies in the sample into five populations that may represent galaxies at different evolution stages or in different environments. We conclude that BayeSED could be a reliable and powerful tool for investigating the formation and evolution of galaxies from the rich multi-wavelength observations currently available. A binary version of the BayeSED code parallelized with Message Passing Interface is publicly available at https://bitbucket.org/hanyk/bayesed.

  19. Unusual sedimentation of a Galveston Bay wetland at Pine Gully, Seabrook, Texas: implications for beach renourishment 

    E-Print Network [OSTI]

    Culver, Wesley Richard

    2009-06-02

    OF A GALVESTON BAY WETLAND AT PINE GULLY, SEABROOK, TEXAS: IMPLICATIONS FOR BEACH RENOURISHMENT A Thesis by WESLEY RICHARD CULVER Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment... of the requirements for the degree of MASTER OF SCIENCE August 2007 Major Subject: Geology UNUSUAL SEDIMENTATION OF A GALVESTON BAY WETLAND AT PINE GULLY, SEABROOK, TEXAS: IMPLICATIONS FOR BEACH RENOURISHMENT A Thesis by WESLEY RICHARD CULVER...

  20. An internship with the Galveston Bay Foundation emphasizing Coastal Marsh Restoration with Spartina alterniflora 

    E-Print Network [OSTI]

    Mahmoud, Joey

    1996-01-01

    Record of Study An Internship with the Galveston Bay Foundation Emphasizing Coastal Marsh Restoration with Spartina alterrsiflora A PROFESSIONAL PAPER by Joey Mahmoud Submitted to the College of Agriculture of Texas ASM University in partial... fulfillment of the requirements for the degree of MASTER OF AGRICULTURE May 1996 Rangeland Ecology and Management An Internship with the Galveston Bay Foundation Emphasizing Coastal Marsh Restoration with Spartina alterniflora A PROFESSIONAL PAPER...

  1. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  2. Characterization of Zns-GaP Naon-composites

    SciTech Connect (OSTI)

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  3. Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells

    SciTech Connect (OSTI)

    Luna, E.; Ishikawa, F.; Batista, P. D.; Trampert, A. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin (Germany)

    2008-04-07

    The indium distribution across (Ga,In)(N,As) quantum wells is determined by using transmission electron microscopy techniques. Inside the quantum well, the indium distribution is well described by Muraki's segregation model; however, it fails in reflecting the concentration at the interfaces. To describe them, we propose a sigmoidal law which defines the smooth variation of the indium concentration with the position and provides a systematic and quantitative characterization of the interfaces. The thermal stability of the interfaces and their interplay with segregation effects are discussed. A connection between the high thermal robustness of the interfaces and the inherent thermodynamic miscibility gap of the alloy is suggested.

  4. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  5. Sources and sinks of [sup 210]Pb in Concepcion Bay, Chile

    SciTech Connect (OSTI)

    Salamanca, Orrego, M.A.

    1993-01-01

    The sources and sinks of [sup 210]Pb to Concepcion Bay waters were evaluated to discern the relative importance of the main removal and supply mechanisms of this radionuclide to the waters of Concepcion Bay. The main inputs of [sup 210]Pb are the atmospheric supply and the advection of offshore upwelling waters. The atmospheric input was measured in precipitation using a collector and inventories of excess [sup 210]Pb in Rocuant and Raqui marsh sediments. The average atmospheric supply of [sup 210]Pb for Concepcion area is about 0.3 dpm cm[sup [minus]2] yr[sup [minus]1]. The advective input from upwelling varies from 0.6 [+-] 1.3 to 2.1 [+-] 2.0 dpm cm[sup [minus]2] yr[sup [minus]1]. [sup 210]Pb is removed efficiently from the water column as shelf water with high [sup 210]Pb content crosses the continental shelf off Concepcion Bay, with [sup 210]Pb/[sup 226]Ra activity ratios decreasing by a factor of 3 to 4 before reaching the interior of the bay. This is coincident with an increase of suspended matter concentration towards inside the bay. The main removal of [sup 210]Pb from Concepcion Bay waters is deposition in sediments. There is an increase of the [sup 210]Pb inventories toward the bay entrance excess (by a factor of 2) and outside the bay sediments (by a factor of 7). This pattern can be explained by an increase of mixing of sediments by the benthic infauna and enhanced removal of [sup 210]Pb from the water column by particles near the bay mouth. Mass balance calculations are included. The residence time of [sup 210]Pb with respect to removal from water column is estimated to be 17 to 43 days. The results of this research indicate that [sup 210]Pb and probably other similar particle-reactive contaminants (such as heavy metals) are retained and redistributed inside the bay by circulation, resuspension and biological mixing.

  6. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-05-15

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  7. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  8. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect (OSTI)

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  9. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect (OSTI)

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing, E-mail: jqpan@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Chen, Weixi [State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871 (China); Ding, Ying, E-mail: Ying.Ding@glasgow.ac.uk [School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  10. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  11. Electrical degradation mechanisms of RF power GaAs PHEMTs

    E-Print Network [OSTI]

    Villanueva, Anita A. (Anita Ariel), 1978-

    2007-01-01

    GaAs Pseudomorphic High-Electron Mobility Transistors (PHEMTs) are widely used in RF power applications. Since these devices typically operate at high power levels and under high voltage biasing, their electrical reliability ...

  12. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  13. Monitoring and Modeling Non-Point Source Contributions of Host-Specific Fecal Contamination in San Pablo Bay

    E-Print Network [OSTI]

    Wuertz, Stefan; Bombardelli, Fabian A; Sirikanchana, Kwanrawee; Wang, Dan

    2009-01-01

    Host-Specific Fecal Contamination in San Pablo Bay Principlelivestock sources of fecal contamination in Kenya with host-Huang. Abstract Fecal contamination from non-point sources

  14. Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Badcock, T. J., E-mail: Thomas.badcock@crl.toshiba.co.uk; Dawson, P.; Davies, M. J. [School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

    2014-03-21

    We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10?K and 100?K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10?K and 50?K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers.

  15. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

    SciTech Connect (OSTI)

    Ledentsov, N. N., E-mail: nikolay.ledentsov@v-i-systems.com; Shchukin, V. A. [VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany); Lyytikäinen, J.; Okhotnikov, O. [Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland); Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V. [A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation); Schlichting, S.; Nippert, F.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)

    2014-11-03

    We report on green (550–560?nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (?500?A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (?550?nm at room temperature). At high current densities (>1?kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4?kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14?kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

  16. Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

    SciTech Connect (OSTI)

    Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

    2014-11-07

    Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

  17. High intensity low temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs

    SciTech Connect (OSTI)

    Shvarts, Maxim Z., E-mail: shvarts@scell.ioffe.ru; Kalyuzhnyy, Nikolay A.; Mintairov, Sergey A.; Soluyanov, Andrei A.; Timoshina, Nailya Kh. [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021 (Russian Federation); Gudovskikh, Alexander S. [Saint-Petersburg Academic University - Nanotechnology Research and Education Centre RAS, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

    2014-09-26

    In the work, the results of an investigation of GaInP/GaInAs/Ge MJ SCs intended for converting concentrated solar radiation, when operating at low temperatures (down to ?190 °C) are presented. A kink of the cell I-V characteristic has been observed in the region close to V{sub oc} starting from ?20°C at operation under concentrated sunlight. The causes for its occurrence have been analyzed and the reasons for formation of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface are discussed. The effect of charge carrier transport in n-GaInP/n-pGe heterostructures on MJ SC output characteristics at low temperatures has been studied including EL technique.

  18. The origin and reduction of switching noise in GaAs/AlGaAs lateral gated devices

    E-Print Network [OSTI]

    Davies, John H.

    to cryogenic temperature with all gates grounded to the substrate to protect against electrostatic effects in AlGaAs: electrons `freeze' into deep traps ­ DX centres ­ below about 150 K. The occupation of donors

  19. Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers

    E-Print Network [OSTI]

    Keogh, David Martin

    2006-01-01

    assuming the material growth technology allows for all ofand a relatively immature growth technology, as well as theof the art for InGaN growth technology. Epitaxial growth of

  20. Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties

    SciTech Connect (OSTI)

    Sztein, Alexander, E-mail: asztein@umail.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106 (United States); Bowers, John E.; DenBaars, Steven P.; Nakamura, Shuji [Materials Department, University of California, Santa Barbara, California 93106 (United States); Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2014-01-27

    A novel polarization field engineering based strategy to simultaneously achieve high electrical conductivity and low thermal conductivity in thermoelectric materials is demonstrated. Polarization based electric fields are used to confine electrons into two-dimensional electron gases in GaN/AlN/Al{sub 0.2}Ga{sub 0.8}N superlattices, resulting in improved electron mobilities as high as 1176 cm{sup 2}/Vs and in-plane thermal conductivity as low as 8.9?W/mK. The resulting room temperature ZT values reach 0.08, a factor of four higher than InGaN and twelve higher than GaN, demonstrating the potential benefits of this polarization based engineering strategy for improving the ZT and efficiencies of thermoelectric materials.

  1. Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors 

    E-Print Network [OSTI]

    Johnson, Derek Wade

    2014-07-31

    production is projected to consume ~100,000 wafers per year by 2015 (Yole Development, “Power GaN – 2012 Edition”), this manufacturing breakthrough represents potential savings of ~$17 million per year....

  2. Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

    E-Print Network [OSTI]

    Florida, University of

    2011; published online 21 March 2011 A subnanometer thick interfacial oxide layer present between used to characterize a Ni/AlGaN interfacial oxide layer with subnanometer thickness. The semiconducting

  3. HOOPER BAY HOUSING ANALYSIS AND ENERGY FEASIBILITY REPORT

    SciTech Connect (OSTI)

    SEA LION CORPORATION; COLD CLIMATE HOUSING RESEARCH CENTER; SOLUTIONS FOR HEALTHY BREATHING; WHITNEY CONSTRUCTION

    2012-12-30

    Sea Lion applied for and received a grant from the Department of Energy (DOE) towards this end titled ā??Energy Efficiency Development and Deployment in Indian Countryā?¯. The initial objectives of the Hooper Bay Energy Efficiency Feasibility Study were to demonstrate a 30% reduction in residential/commercial energy usage and identify the economic benefits of implementing energy efficiency measures to the Tribe through: (1) partnering with Whitney Construction and Solutions for Healthy Breathing in the training and hire of 2 local energy assessors to conduct energy audits of 9 representative housing models and 2 commercial units in the community. These homes are representative of 52 homes constructed across different eras. (2) partnering with Cold Climate Housing Research Center to document current electrical and heating energy consumption and analyze data for a final feasibility report (3) assessing the economics of electricity & heating fuel usage; (4) projecting energy savings or fossil fuel reduction by modeling of improvement scenarios and cost feasibility The following two objectives will be completed after the publication of this report: (5) the development of materials lists for energy efficiency improvements (6) identifying financing options for the follow-up energy efficiency implementation phase.

  4. Improved Measurement of Electron Antineutrino Disappearance at Daya Bay

    E-Print Network [OSTI]

    Daya Bay Collaboration; F. P. An; Q. An; J. Z. Bai; A. B. Balantekin; H. R. Band; W. Beriguete; M. Bishai; S. Blyth; R. L. Brown; G. F. Cao; J. Cao; R. Carr; W. T. Chan; J. F. Chang; Y. Chang; C. Chasman; H. S. Chen; H. Y. Chen; S. J. Chen; S. M. Chen; X. C. Chen; X. H. Chen; X. S. Chen; Y. Chen; Y. X. Chen; J. J. Cherwinka; M. C. Chu; J. P. Cummings; Z. Y. Deng; Y. Y. Ding; M. V. Diwan; E. Draeger; X. F. Du; D. Dwyer; W. R. Edwards; S. R. Ely; S. D. Fang; J. Y. Fu; Z. W. Fu; L. Q. Ge; R. L. Gill; M. Gonchar; G. H. Gong; H. Gong; Y. A. Gornushkin; W. Q. Gu; M. Y. Guan; X. H. Guo; R. W. Hackenburg; R. L. Hahn; S. Hans; H. F. Hao; M. He; Q. He; K. M. Heeger; Y. K. Heng; P. Hinrichs; Y. K. Hor; Y. B. Hsiung; B. Z. Hu; T. Hu; H. X. Huang; H. Z. Huang; X. T. Huang; P. Huber; V. Issakov; Z. Isvan; D. E. Jaffe; S. Jetter; X. L. Ji; X. P. Ji; H. J. Jiang; J. B. Jiao; R. A. Johnson; L. Kang; S. H. Kettell; M. Kramer; K. K. Kwan; M. W. Kwok; T. Kwok; C. Y. Lai; W. C. Lai; W. H. Lai; K. Lau; L. Lebanowski; J. Lee; R. T. Lei; R. Leitner; J. K. C. Leung; K. Y. Leung; C. A. Lewis; F. Li; G. S. Li; Q. J. Li; W. D. Li; X. B. Li; X. N. Li; X. Q. Li; Y. Li; Z. B. Li; H. Liang; C. J. Lin; G. L. Lin; S. K. Lin; Y. C. Lin; J. J. Ling; J. M. Link; L. Littenberg; B. R. Littlejohn; D. W. Liu; J. C. Liu; J. L. Liu; Y. B. Liu; C. Lu; H. Q. Lu; A. Luk; K. B. Luk; Q. M. Ma; X. B. Ma; X. Y. Ma; Y. Q. Ma; K. T. McDonald; M. C. McFarlane; R. D. McKeown; Y. Meng; D. Mohapatra; Y. Nakajima; J. Napolitano; D. Naumov; I. Nemchenok; H. Y. Ngai; W. K. Ngai; Y. B. Nie; Z. Ning; J. P. Ochoa-Ricoux; A. Olshevski; S. Patton; V. Pec; J. C. Peng; L. E. Piilonen; L. Pinsky; C. S. J. Pun; F. Z. Qi; M. Qi; X. Qian; N. Raper; J. Ren; R. Rosero; B. Roskovec; X. C. Ruan; B. B. Shao; K. Shih; H. Steiner; G. X. Sun; J. L. Sun; N. Tagg; Y. H. Tam; H. K. Tanaka; X. Tang; H. Themann; Y. Torun; S. Trentalange; O. Tsai; K. V. Tsang; R. H. M. Tsang; C. E. Tull; Y. C. Tung; B. Viren; V. Vorobel; C. H. Wang; L. S. Wang; L. Y. Wang; L. Z. Wang; M. Wang; N. Y. Wang; R. G. Wang; W. Wang; X. Wang; Y. F. Wang; Z. Wang; Z. Wang; Z. M. Wang; D. M. Webber; H. Y. Wei; Y. D. Wei; L. J. Wen; K. Whisnant; C. G. White; L. Whitehead; Y. Williamson; T. Wise; H. L. H. Wong; E. T. Worcester; F. F. Wu; Q. Wu; J. B. Xi; D. M. Xia; Z. Z. Xing; J. Xu; J. Xu; J. L. Xu; Y. Xu; T. Xue; C. G. Yang; L. Yang; M. Ye; M. Yeh; Y. S. Yeh; B. L. Young; Z. Y. Yu; L. Zhan; C. Zhang; F. H. Zhang; J. W. Zhang; Q. M. Zhang; S. H. Zhang; Y. C. Zhang; Y. H. Zhang; Y. X. Zhang; Z. J. Zhang; Z. P. Zhang; Z. Y. Zhang; J. Zhao; Q. W. Zhao; Y. B. Zhao; L. Zheng; W. L. Zhong; L. Zhou; Z. Y. Zhou; H. L. Zhuang; J. H. Zou

    2012-11-17

    We report an improved measurement of the neutrino mixing angle $\\theta_{13}$ from the Daya Bay Reactor Neutrino Experiment. We exclude a zero value for $\\sin^22\\theta_{13}$ with a significance of 7.7 standard deviations. Electron antineutrinos from six reactors of 2.9 GW$_{\\rm th}$ were detected in six antineutrino detectors deployed in two near (flux-weighted baselines of 470 m and 576 m) and one far (1648 m) underground experimental halls. Using 139 days of data, 28909 (205308) electron antineutrino candidates were detected at the far hall (near halls). The ratio of the observed to the expected number of antineutrinos assuming no oscillations at the far hall is $0.944\\pm 0.007({\\rm stat.}) \\pm 0.003({\\rm syst.})$. An analysis of the relative rates in six detectors finds $\\sin^22\\theta_{13}=0.089\\pm 0.010({\\rm stat.})\\pm0.005({\\rm syst.})$ in a three-neutrino framework.

  5. Deep porosity preservation in the Norphlet Formation, Mobil Bay, Alabama

    SciTech Connect (OSTI)

    Ajdukiewicz, J.M.; Paxton, S.T.; Szabvo, J.O. )

    1991-03-01

    Compaction and pressure solution have commonly been assumed to destroy primary intergranular porosity in deeply buried sandstones. However, primary porosities of up to 20% are preserved at depths greater than 20,000 feet in the Norphlet Formation of Mobile Bay. Previous workers have called upon a number of mechanisms to preserve these high porosities in the Norphlet, specifically chlorite rim cements, gas emplacement, overpressuring, and decementation. In contrast, our study of data from 23 Norphlet wells, including 450 thin sections, indicates that these suggested mechanisms are not the primary cause of porosity preservation in the Norphlet. The authors propose an alternative interpretation: that in the Norphlet, as in other well-sorted, ductile-grain-poor sandstones, porosity loss from compaction did not go to completion under reservoir (premetamorphic) conditions, but stabilized at depths of about 5,000-8,000 feet and porosity values of about 26%. Porosity loss below these values is due to cementation. For cementation to occur, both an adequate source of cement and geochemical conditions favoring cement precipitation must be present. Computer simulations of Norphlet burial history, including post-depositional fluid-flow patterns, suggest that conditions favorable to quartz cementation never occurred in the bulk of the Norphlet because of the formation's stratigraphic position and isolation from a basinward source of silica-saturated fluids.

  6. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect (OSTI)

    Özduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigör, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  7. Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure

    SciTech Connect (OSTI)

    Khmissi, H.; Baira, M.; Bouzaieene, L.; Saidi, F.; Maaref, H. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Sfaxi, L. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Universite de Sousse Faculte des Sciences de Monastir, Avenue de l'Environnement 5019 Monastir (Tunisia); Bru-Chevallier, C. [Institut des Nanotechnologies de Lyon (INL), CNRS UMR-5270, INSA-LYON, 7, Avenue Jean Capelle, Bat. Blaise Pascal, 69621 Villeurbanne (France)

    2011-03-01

    Optical properties of InAs quantum dots (QDs) inserted in AlGaAs/GaAs modulation doped heterostructure are investigated. To study the effect of carrier transfer behavior on the luminescence of self-assembled quantum dots, a series of sample has been prepared using molecular beam epitaxy (Riber 32 system) in which we have varied the thickness separating the delta dopage and the InAs quantum dots layer. Photoluminescence spectra show the existence of two peaks that can be attributed to transition energies from the ground state (E{sub 1}-HH{sub 1}) and the first excited state (E{sub 2}-HH{sub 2}). Two antagonist effects have been observed, a blue shift of the emission energies result from electron transferred from the AlGaAs/GaAs heterojunction to the InAs quantum dots and a red shift caused by the quantum confined Stark effect due to the internal electric field existing In the AlGaAs/GaAs heterojunction.

  8. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  9. Many people and organizations are working together to ensure the Morro Bay ecosystem remains healthy: the San Luis Obispo Science and Ecosystem Alliance

    E-Print Network [OSTI]

    Hilderbrand, Robert H.

    healthy: the San Luis Obispo Science and Ecosystem Alliance (SLOSEA), the Morro Bay National Estuary were developed by members of the San Luis Obispo Science and Ecosystem Alliance, the Morro Bay National

  10. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  11. Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well

    E-Print Network [OSTI]

    Jalali. Bahram

    Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico, New Mexico 87545 Received 26 February 2007; accepted 1 June 2007; published online 28 June 2007 intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

  12. EA-1992: Funding for Principle Power, Inc., for the WindFloat Pacific Offshore Wind Demonstration Project, offshore of Coos Bay, Oregon

    Office of Energy Efficiency and Renewable Energy (EERE)

    Funding for Principle Power, Inc., for the WindFloat Pacific Offshore Wind Demonstration Project, offshore of Coos Bay, Oregon

  13. A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    amplifier using GaN- HEMTs-on-Sapphire. I INTRODUCTION GaN HEMTs have enormous potential for realizing high-power Traveling Wave Power Amplifier circuit (TWPA)[1][2] for realization of wideband power amplifiersWE4A-5 A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs Jane J

  14. Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2

    SciTech Connect (OSTI)

    Hongpinyo, V; Ding, Y H; Dimas, C E; Wang, Y; Ooi, B S; Qiu, W; Goddard, L L; Behymer, E M; Cole, G D; Bond, T C

    2008-06-11

    The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.

  15. Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells J. Simon,1,a

    E-Print Network [OSTI]

    Haller, Gary L.

    . INTRODUCTION Triple-junction metamorphic solar cells have reached ef- ficiencies as high as 41.1% by combiningMetamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells J. Simon,1,a S. Tomasulo,1 P-yP solar cells. Tensile-strained GaAsxP1-x buffers grown on GaAs using unoptimized conditions

  16. FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS

    E-Print Network [OSTI]

    Atwater, Harry

    FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS RobynAlAs/InGaAsP/InGaAs triple junction solar cell grown on InP substrate. X-ray diffraction characterization shows high quality solar cell materials. Preliminary 1-sun AM1.5D testing of the triple junction solar cell shows promising

  17. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore »the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  18. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect (OSTI)

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  19. USDA Forest Service Gen.Tech. Rep. PSW-GTR-187. 2003. 249 VI. The Association of Bay Area

    E-Print Network [OSTI]

    of leaders in the high-tech industry, in writing a report designed to address the problem of housingUSDA Forest Service Gen.Tech. Rep. PSW-GTR-187. 2003. 249 VI. The Association of Bay Area in the region. #12;USDA Forest Service Gen.Tech. Rep. PSW-GTR-187. 2003. SectionVI 250 THE ASSOCIATION OF BAY

  20. Seasonal dynamics of bacterial biomass and production in a coastal arctic ecosystem: Franklin Bay, western Canadian Arctic

    E-Print Network [OSTI]

    Vincent, Warwick F.

    Seasonal dynamics of bacterial biomass and production in a coastal arctic ecosystem: Franklin Bay 2008. [1] The Canadian Arctic Shelf Exchange Study (CASES) included the overwintering deployment biomass and production in a coastal arctic ecosystem: Franklin Bay, western Canadian Arctic, J. Geophys

  1. Impacts of Radioactive 137Cs on Marine Bacterioplankton: Effects of the Fukushima Disaster on Hawaii's Kaneohe Bay Bacterial Communities

    E-Print Network [OSTI]

    Heller, Paul

    Impacts of Radioactive 137Cs on Marine Bacterioplankton: Effects of the Fukushima Disaster such catastrophe, a tsunami off the coast of Japan, occurred on March 11, 2011. The tsunami caused the Fukushima on the bacterioplankton community of Kaneohe Bay in Oahu, Hawaii. The bay is in the direct path of Fukushima's radioactive

  2. Sediment accumulation in San Leandro Bay, Alameda County, California, during the 20th century - A preliminary report

    SciTech Connect (OSTI)

    Nolan, K.M.; Fuller, C.C.

    1986-01-01

    Major changes made in the configuration of San Leandro Bay, Alameda County, California, during the 20th century have caused rapid sedimentation within parts of the Bay. Comparison of bathymetric surveys indicates that sedimentation in the vicinity of the San Leandro Bay channel averaged 0.7 cm/annum between 1856 and 1984. Lead-210 data collected at four shallow water sites east of the San Leandro Bay channel indicated that sedimentation rates have averaged between 0.06 and 0.28 cm/annum. Because bioturbation of bottom sediments cannot be discounted, better definition of this range in sedimentation rates would require measuring the activity of lead-210 on incoming sediments. In addition to sediment deposited in the vicinity of the San Leandro Bay channel and open, shallow areas to the east, 850,740 cu m of sediment was deposited between 1948 and 1983 in an area dredged at the mouth of San Leandro Creek. All available data indicate that between 1,213,000 and 1,364,000 cu m of sediment was deposited in San Leandro Bay between 1948 and 1983. Sediment yield data from an adjacent drainage basin, when combined with inventories of lead-210 and cesium-137, indicate that most of the sediment deposited in San Leandro Bay is coming from resuspension of bottom sediments or from erosion of marshes or shorelines of San Leandro or San Francisco Bay. 31 refs., 7 figs., 4 tabs.

  3. Cultural contributions to the island of St. John, United States Virgin Islands: underwater historical archaeology at Cruz Bay 

    E-Print Network [OSTI]

    Marquez, Carmen M

    1995-01-01

    on the eastern side of St. John. Coral Bay was the principal port of St. John until 1733, when a major slave insurrection occurred, and the population moved west toward Cruz Bay, a primary anchorage for interisland and transoceanic vessels during the 18th and 19...

  4. Laser Gain and Threshold Properties in Compressive-Strained and Lattice-Matched GaInNAs/GaAs Quantum Wells

    SciTech Connect (OSTI)

    Chow, W.W.; Jones, E.D.; Modine, N.A.; Allerman, A.A.; Kurtz, S.R.

    1999-08-04

    The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GAInNAs/GaAs laser structures.

  5. Sanders, J. E.; Merguerian, Charles; and Okulewicz, S. C., 1995b, Recumbent fold in displaced slab of Upper Cretaceous sediments, Princes Bay, Staten Island, New York

    E-Print Network [OSTI]

    Merguerian, Charles

    of Upper Cretaceous sediments, Princes Bay, Staten Island, New York: further evidence that ice flowing Program with Abstracts, 135 p. RECUMBENT FOLD IN DISPLACED SLAB OF UPPER CRETACEOUS SEDIMENTS, PRINCES BAY the navigation tower along the shores of Princes Bay, Staten Island, [UTM grid coordinates 566.70E, 4484.20N

  6. Metal contacts on ZnSe and GaN

    SciTech Connect (OSTI)

    Duxstad, K J [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering

    1997-05-01

    Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

  7. Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment

    SciTech Connect (OSTI)

    Ahmadi, Elaheh; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States); Chalabi, Hamidreza [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Kaun, Stephen W.; Shivaraman, Ravi; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2014-10-07

    The influence of alloy clustering on fluctuations in the ground state energy of the two-dimensional electron gas (2DEG) in AlGaN/GaN and InAlN/GaN heterostructures is studied. We show that because of these fluctuations, alloy clustering degrades the mobility even when the 2DEG wavefunction does not penetrate the alloy barrier unlike alloy disorder scattering. A comparison between the results obtained for AlGaN/GaN and InAlN/GaN heterostructures shows that alloy clustering limits the 2DEG mobility to a greater degree in InAlN/GaN heterostructures. Our study also reveals that the inclusion of an AlN interlayer increases the limiting mobility from alloy clustering. Moreover, Atom probe tomography is used to demonstrate the random nature of the fluctuations in the alloy composition.

  8. Independent measurement of the neutrino mixing angle ?13 via neutron capture on hydrogen at Daya Bay

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jaffe, D. E.

    2014-10-03

    A new measurement of the ?13 mixing angle has been obtained at the Daya Bay Reactor Neutrino Experiment via the detection of inverse beta decays tagged by neutron capture on hydrogen. The antineutrino events for hydrogen capture are distinct from those for gadolinium capture with largely different systematic uncertainties, allowing a determination independent of the gadolinium-capture result and an improvement on the precision of the ?13 measurement. With a 217-day antineutrino data set obtained with six antineutrino detectors and from six 2.9 GWth reactors, the rate deficit observed at the far hall is interpreted as sin22?13=0.083±0.018 in the three-flavor oscillationmore »model. When combined with the gadolinium-capture result from Daya Bay, we obtain sin22?13=0.089±0.008 as the final result for the six-antineutrino-detector configuration of the Daya Bay experiment.« less

  9. Ann bay lodyans 1 / se Bryant Freeman ("Tonton Liben") ki pare ti liv sa a

    E-Print Network [OSTI]

    Freeman, Bryant C.

    2000-01-01

    KU ScholarWorks | http://kuscholarworks.ku.edu Ann Bay Lodyans 1 se Bryant Freeman (“Tonton Liben”) ki pare ti liv sa a 2000 by Bryant C. Freeman, ed. This work has been made available by the University of Kansas Libraries’ Office of Scholarly... Freeman (“Tonton Liben”) ki pare ti liv sa a. [Lawrence, Kan.] : Institute of Haitian Studies ; [Port-au-Prince] : Bon Nouvčl : Fondasyon Alfa Lwčs, 2000. Terms of Use: http://www2.ku.edu/~scholar/docs/license.shtml ANN BAY LODYANS 1 Se Bryant Freeman...

  10. A study of the foraminifera and sediments of Matagorda Bay, Texas 

    E-Print Network [OSTI]

    Shenton, Edward Heriot

    1957-01-01

    A STUDY OF THE FORAMINIFERA AND SEDIMENTS OF MATAGORDA BAY& TEXAS ahg C0 L ( /SF OP FF QS A Thesis By Edward Heriot Shenton Submitted to the Graduate School of the Agricultural and Mechanical College of Texas in partial fulfilhaent... of the requirements for the degree of MASTER OF SCIENCE May, 1957 MaJor SubJect: Oceanography A STUDY OF THE FORAMINIFEBA AND SEDIMEETS OF MATAGOBDA BAY, TEXAS A Thesis By Edward Heriot Shenton Approved as to style and content by; Chairman of Couu~it e Head...

  11. Abundance and distribution of the western Gulf stone crab (Menippe adina) in Galveston Bay, Texas 

    E-Print Network [OSTI]

    Boslet, Jane Murray

    1989-01-01

    I BUNDANCE AND DI STRISUT . ON OF THE WESTERN GULF STOiuE CRAB LilFNIL'PC l', Diijil) IN GALVESTON BAY TEXAS Thesis JALXE iiURRAY HOSLET SuL&mitted to th= Office of Graduate Studies of Texa Aai1 University in :. a- Dial fulfullment... of the requirements for the deqree of MAS'I ~ R OI" SCIENCE May 19B9 Major subject: Wildlife and Fisheries Sciences ABUNDANCE AND DISTRIBUTION OF THE WESTERN GULF STONE CRAB (NENIPPE ADINA) IN GALVESTON BAY, TEXAS A Thesis by JANE MURRAY BOSLET Approved...

  12. Targeting Net Zero Energy at Marine Corps Base Kaneohe Bay, Hawaii: Assessment and Recommendations

    SciTech Connect (OSTI)

    Burman, K.; Kandt, A.; Lisell, L.; Booth, S.; Walker, A.; Roberts, J.; Falcey, J.

    2011-11-01

    DOD's U.S. Pacific Command has partnered with the U.S. Department of Energy's (DOE) National Renewable Energy Laboratory (NREL) to assess opportunities for increasing energy security through renewable energy and energy efficiency in Hawaii installations. NREL selected Marine Corps Base Hawaii (MCBH), Kaneohe Bay to receive technical support for net zero energy assessment and planning funded through the Hawaii Clean Energy Initiative (HCEI). NREL performed a comprehensive assessment to appraise the potential of MCBH Kaneohe Bay to achieve net zero energy status through energy efficiency, renewable energy, and electric vehicle integration. This report summarizes the results of the assessment and provides energy recommendations.

  13. MHK Projects/Kachemak Bay Tidal Energy Project | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource HistoryScenarios Towards 2050 JumpCoos Bay OPTHalf Moon CoveHydroKachemak Bay

  14. Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

    SciTech Connect (OSTI)

    Schmidt, Gordon Müller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jürgen; Glauser, Marlene; Carlin, Jean-Franēois; Cosendey, Gatien; Butté, Raphaėl; Grandjean, Nicolas

    2014-07-21

    Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

  15. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

    2010-01-15

    The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

  16. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect (OSTI)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  17. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-01

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

  18. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-15

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

  19. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect (OSTI)

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  20. A hole modulator for InGaN/GaN light-emitting diodes Zi-Hui Zhang, Zabu Kyaw, Wei Liu, Yun Ji, Liancheng Wang, Swee Tiam Tan, Xiao Wei Sun, and Hilmi Volkan

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    well on optical power of light-emitting diodes Appl. Phys. Lett. 96, 051113 (2010); 10-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which

  1. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

    SciTech Connect (OSTI)

    Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko; Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel; Garcia, Alipio

    2009-06-08

    We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

  2. Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets

    SciTech Connect (OSTI)

    Chu, Kuei-Yi; Chiang, Meng-Hsueh Cheng, Shiou-Ying; Liu, Wen-Chau

    2012-02-15

    Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

  3. Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Edmunds, C.; Malis, O.; Shao, J.; Shirazi-HD, M.; Manfra, M. J.

    2014-07-14

    We demonstrate THz intersubband absorption (15.6–26.1?meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14?meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a??40% reduction in the linewidth (from roughly 8 to 5?meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

  4. High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

    SciTech Connect (OSTI)

    Young, N. G. Farrell, R. M.; Iza, M.; Speck, J. S.; Perl, E. E.; Keller, S.; Bowers, J. E.; Nakamura, S.; DenBaars, S. P.

    2014-04-21

    We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

  5. InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

    SciTech Connect (OSTI)

    Alonso-Įlvarez, D.; Thomas, T.; Führer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.

    2014-08-25

    Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1??s, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

  6. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda [University of Notre Dame, IN (United States); Song, Bo [Cornell University, Ithaca, NY (United States); Qi, Meng [University of Notre Dame, IN (United States); Hu, Zongyang [University of Notre Dame, IN (United States); Nomoto, Kazuki [University of Notre Dame, IN (United States); Yan, Xiaodong [University of Notre Dame, IN (United States); Cao, Yu [IQE, Westborough, MA (United States); Johnson, Wayne [IQE, Westborough, MA (United States); Kohn, Erhard [University of Notre Dame, IN (United States); Jena, Debdeep [Cornell University, Ithaca, NY (United States); Xing, Grace Huili [Cornell University, Ithaca, NY (United States)

    2015-04-01

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m?{center_dot}cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW{center_dot}cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

  7. Electrically pumped single-photon emission at room temperature from a single InGaN/GaN quantum dot

    SciTech Connect (OSTI)

    Deshpande, Saniya; Frost, Thomas; Hazari, Arnab; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109 (United States)

    2014-10-06

    We demonstrate a semiconductor quantum dot based electrically pumped single-photon source operating at room temperature. Single photons emitted in the red spectral range from single In{sub 0.4}Ga{sub 0.6}N/GaN quantum dots exhibit a second-order correlation value g{sup (2)}(0) of 0.29, and fast recombination lifetime ?1.3 ±0.3 ns at room temperature. The single-photon source can be driven at an excitation repetition rate of 200?MHz.

  8. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda; Song, Bo; Qi, Meng; Hu, Zongyang; Nomoto, Kazuki; Yan, Xiaodong; Cao, Yu; Johnson, Wayne; Kohn, Erhard; Jena, Debdeep; et al

    2015-02-16

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m? · cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW·cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

  9. Theory of weak localization in ferromagnetic (Ga,Mn)As 

    E-Print Network [OSTI]

    Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

    2009-01-01

    We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence-band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn...

  10. Low-temperature magnetization of (Ga,Mn) As semiconductors 

    E-Print Network [OSTI]

    Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

    2006-01-01

    the semiphenomenological virtual crystal model the valence band holes experience a mean-field hMF =JpdNMn?S , and the band Hamiltonian can then be written as H? MF=H? KL?B?+hMFs?z, where H? KL?B? is the B-dependent six- band Kohn-Luttinger Hamiltonian of the GaAs host...

  11. Ohmic contacts for high-temperature GaP devices 

    E-Print Network [OSTI]

    Van der Hoeven, Willem Bernard

    1981-01-01

    in Table II, heat treatments have also been made by laser. One of the earliest papers that describe laser annealing to obtain ohmic contacts to GaP appeared in 1974 (20] . In this paper, Pounds, Saifi, and Hahm reported to have obtained ohmic contacts...

  12. High-quality InP on GaAs

    E-Print Network [OSTI]

    Quitoriano, Nathaniel Joseph

    2006-01-01

    In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

  13. Nanoscale GaAs metalsemiconductormetal photodetectors fabricated using nanoimprint lithography

    E-Print Network [OSTI]

    ­V) characteristics of the contacts are very sensi- tive to the surface states and defects. In this letter, we report mold with interdigited fin- gers was first created on a silicon substrate. Next, a layer of polymethylmethancrylate PMMA was spun on a semi- insulating SI GaAs substrate. Before imprinting, both the mold

  14. Properties of H, O and C in GaN

    SciTech Connect (OSTI)

    Pearton, S.J.; Abernathy, C.R.; Lee, J.W.

    1996-04-01

    The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

  15. Glacial and nonglacial events in the eastern James Bay lowlands, Canada

    E-Print Network [OSTI]

    and dating nonglacial deposits in sedimentary sequences east of James Bay. Our investigations indicate that the regional stratigraphy comprises at least five distinct tills and an important unit of glaciola- custrine rhythmites. This glacial sequence lies on massive lacustrine clay and fluvial sand containing abundant

  16. Simulation of Estuarine Flooding and Dewatering with Application to Great Bay, New Hampshire

    E-Print Network [OSTI]

    Simulation of Estuarine Flooding and Dewatering with Application to Great Bay, New Hampshire Justin T. C. Ip, Daniel R. Lynch Dartmouth College, Hanover, New Hampshire, 03755, U.S.A. Carl T, New Hamp­ shire estuary system are presented. The model incorporate two­dimensional kinematic wave

  17. Modeling tidal flow in the Great Bay Estuary, New Hampshire, using a depth averaged

    E-Print Network [OSTI]

    Modeling tidal flow in the Great Bay Estuary, New Hampshire, using a depth averaged flooding, University of New Hampshire, USA. 2 Numerical Methods Lab., Dartmouth College, USA. 3 Ocean Process Analysis Lab., University of New Hampshire, USA. Abstract Current, sea level and bed load transport

  18. Simulation of the Great Bay Estuarine System: Tides with Tidal Flats Wetting and Drying

    E-Print Network [OSTI]

    , S.N. Erturk, M.R. Swift, W.S. Brown, B. Celikkol University of New Hampshire, Durham, New Hampshire, 03824, U.S.A. J.T.C. Ip, D.R. Lynch Dartmouth College, Hanover, New Hampshire, 03755, U.S.A. January 2 2 tide, Great Bay Estuarine System, New Hampshire coast. #12; 2 Simulation of the GBES 1

  19. Simulation of the Great Bay Estuarine System: Tides with Tidal Flats Wetting and Drying

    E-Print Network [OSTI]

    , A. Bilgili , M.R. Swift, W.S. Brown, B. Celikkol University of New Hampshire, Durham, New Hampshire, 03824, U.S.A. J.T.C. Ip, D.R. Lynch Dartmouth College, Hanover, New Hampshire, 03755, U.S.A. February 27 2 tide, Great Bay Estuarine System, New Hampshire coast. #12; 2 Simulation of the GBES 1

  20. Bayes Linear Uncertainty Analysis for Oil Reservoirs Based on Multiscale Computer Experiments

    E-Print Network [OSTI]

    Oakley, Jeremy

    of the input parameters for a reservoir model. Therefore, an uncertainty analysis for the model often proceedsBayes Linear Uncertainty Analysis for Oil Reservoirs Based on Multiscale Computer Experiments for the efficient management of the reservoir. In a Bayesian analysis, all of our uncertainties are incorporated

  1. Spatial analysis of air pollution and cancer incidence rates in Haifa Bay, Israel Ori Eitan a

    E-Print Network [OSTI]

    Spatial analysis of air pollution and cancer incidence rates in Haifa Bay, Israel Ori Eitan with historically high air pollution levels. This work tests whether persistent spatial patterns of metrics of chronic exposure to air pollutants are associated with the observed patterns of cancer incidence rates

  2. Are You Polluting Our Lakes and Streams and the Chesapeake Bay?

    E-Print Network [OSTI]

    Hill, Wendell T.

    1 Are You Polluting Our Lakes and Streams and the Chesapeake Bay? Pet waste left to decay, and rivers. They include the following: · Pesticides · Household chemicals · Fertilizers · Oil and antifreeze · Pet waste When pet waste is washed into lakes or streams, the waste decays, using up oxygen

  3. Posterior Probability Estimation Techniques Embedded in a Bayes Filter for Vibration-based

    E-Print Network [OSTI]

    Zell, Andreas

    Posterior Probability Estimation Techniques Embedded in a Bayes Filter for Vibration-based Terrain Classification Philippe Komma and Andreas Zell Abstract Vibration signals acquired during robot traversal provide] or ladar sensors [15, 10] can be employed. Recently, several researchers considered vehicle vibrations

  4. Attachment B: Jamaica Bay Watershed Protection Plan Update 1. WATER QUALITY

    E-Print Network [OSTI]

    Columbia University

    Bay. Ongoing NYCDEP continues to limit shipments. NA NA DEP See attached status report. Upgrade will accommodate daily transshipments instead of a few times a week to ensure all Jamaica sludge is treated via excess algae and sea lettuce to reduce nitrogen and produce biodiesel fuels. Design anticipated to begin

  5. Nekton of New Seagrass Habitats Colonizing a Subsided Salt Marsh in Galveston Bay, Texas

    E-Print Network [OSTI]

    Nekton of New Seagrass Habitats Colonizing a Subsided Salt Marsh in Galveston Bay, Texas SETH P Delwood Beach Road, Panama City, Florida 32408 ABSTRACT: Subsidence and erosion of intertidal salt marsh on this system is the extrac- tion of subsurface oil, gas, and water resources that has caused land subsidence

  6. Space Use by Forster's Terns Breeding in South San Francisco Bay JILL BLUSO-DEMERS

    E-Print Network [OSTI]

    Colwell, Mark

    , sex- specific foraging behaviors among seabirds with negligible sexual size dimorphism (i that differ- ences reported in sexually dimorphic species are not mediated exclusively by differences in body 95616 4 Current address: San Francisco Bay Bird Observatory, 524 Valley Way, Milpitas, CA 95035 Internet

  7. Offshore wind resources from satellite SAR Charlotte Bay Hasager, Merete Bruun Christiansen, Morten Nielsen,

    E-Print Network [OSTI]

    Offshore wind resources from satellite SAR Charlotte Bay Hasager, Merete Bruun Christiansen, Morten Nielsen, Risoe National Laboratory, Wind Energy Department, DTU, Frederiksborgvej 399, 4000 Roskilde-real-time calculated to wind maps using CMOD functions using the ANSWRS software from the Johns Hopkins University

  8. Coastal Wind Mapping from Satellite SAR: Possibilities and Limitations Charlotte Bay Hasager and Merete Bruun Christiansen

    E-Print Network [OSTI]

    - 21 - Coastal Wind Mapping from Satellite SAR: Possibilities and Limitations Charlotte Bay Hasager and Merete Bruun Christiansen Risų National Laboratory, Wind Energy Department, Meteorology Program, VEA-118 Abstract Satellite remote sensing of ocean wind fields from Synthetic Aperture Radar (SAR) observations

  9. Impact of tropical cyclones on the ocean heat budget in the Bay of Bengal during 1999

    E-Print Network [OSTI]

    Han, Weiqing

    ­November in 1999 on the Bay of Bengal (BoB) heat budget are examined using the Hybrid Coordinate Ocean Model estimates using previously published methods based on surface observations. The relatively weak heat pumping pumping (DOHP) by tropical cyclones (TCs), which mea- sures the amount of heat that is pumped down from

  10. Measuring Sin^22?_13 with the Daya Bay Nuclear Reactors

    E-Print Network [OSTI]

    Yifang Wang

    2006-10-09

    Angle \\theta_13 is one of the two unknown neutrino mixing parameters to be determined. Its value may determine the future trend of the neutrino physics. We propose to measure sin^22\\theta_13 with a sensitivity better than 0.01 (90% C.L) at the Daya Bay reactor power plant.

  11. The Circulation of Tampa Bay Driven by Buoyancy, Tides and Winds, as Simulated

    E-Print Network [OSTI]

    Meyers, Steven D.

    1 The Circulation of Tampa Bay Driven by Buoyancy, Tides and Winds, as Simulated using a Finite by rivers, tides and winds. Because of a mean wind velocity vector directed down the estuary axis we ran a parallel model experiment without winds to distinguish the estuarine circulation by gravitational

  12. Using A Bayes Classifier to Draw the First Down Line on a Football Field

    E-Print Network [OSTI]

    Schwartz, Eric M.

    Using A Bayes Classifier to Draw the First Down Line on a Football Field Jeremy Anderson, Dr a line on an image of a football field without marking on the players. This project was motivated by Sport Vision, developers of the first down indicator used for television broadcasts of football games

  13. Composition of Fish Communities in a European Macrotidal Salt Marsh (the Mont Saint-Michel Bay,

    E-Print Network [OSTI]

    Boyer, Edmond

    Composition of Fish Communities in a European Macrotidal Salt Marsh (the Mont Saint-Michel Bay At least 100 fish species are known to be present in the intertidal areas (estuaries, mudflats and salt, such as estuaries and lagoons, play a nursery role for many fish species. However, in Europe little attention has

  14. Heavy Metals contamination in two bioluminescent bays of Puerto Rico Yadira Soto Viruet

    E-Print Network [OSTI]

    Gilbes, Fernando

    1 Heavy Metals contamination in two bioluminescent bays of Puerto Rico Yadira Soto Viruet #802 characteristics. The main purpose of this research was to evaluate the presence of heavy metals of pesticides for agriculture, untreated wastewater and variety of industrial activities (power plants, oil

  15. Bayes and Big Data: The Consensus Monte Carlo Algorithm Steven L. Scott1

    E-Print Network [OSTI]

    Cortes, Corinna

    Bayes and Big Data: The Consensus Monte Carlo Algorithm Steven L. Scott1 , Alexander W. Blocker1 of Business October 31, 2013 Abstract A useful definition of "big data" is data that is too big to comfortably by splitting data across multiple machines. Communication between large numbers of machines is expensive

  16. Recipes from the Secret Book of Artephius San Francisco Bay Area, California

    E-Print Network [OSTI]

    Owens, John

    Recipes from the Secret Book of Artephius Gold Team San Francisco Bay Area, California The Codex Leicester Introduction We seek the recipes contained in The Secret Book of Artephius, a text first. While in the possession of the Vatican, the recipes contained in the text were sold twice during

  17. A numerical study of circulation and mixing in a macrotidal estuary: Cobscook Bay, Maine 

    E-Print Network [OSTI]

    Baca, Michael William

    1998-01-01

    A numerical, three-dimensional coastal ocean model was ics. used to study the circulation and subsequent mixing of Cobscook Bay by the lunar semi-diurnal tide. The results showed strong ebbing and flooding currents along a main channel connected...

  18. EIS-0296: South Oregon Coast Reinforcement Project, Coos Bay/North Bend, Oregon

    Broader source: Energy.gov [DOE]

    This EIS analyzes BPA's proposed action to build a 500- kilovolt (kV) transmission line and new substation to reinforce electrical service to the southern coast of the state of Oregon. Nucor Steel, a division of Nucor Corporation, may build a new steel mill in the Coos Bay/North Bend, Oregon, area.

  19. EIS-0296: South Oregon Coast Reinforcement Project, Coos Bay/North Bend, Oregon

    Broader source: Energy.gov [DOE]

    Bonneville Power Administration proposes to build a 500- kilovolt (kV) transmission line and new substation to reinforce electrical service to the southern coast of the state of Oregon. Nucor Steel, a division of Nucor Corporation, may build a new steel mill in the Coos Bay/North Bend, Oregon, area.

  20. Incorporating Optics into a Coupled Physical-Biological Forecasting System in the Monterey Bay

    E-Print Network [OSTI]

    Boss, Emmanuel S.

    Incorporating Optics into a Coupled Physical-Biological Forecasting System in the Monterey Bay Fei://www.marine.maine.edu/~eboss/index.html http://ourocean.jpl.nasa.gov/ LONG-TERM GOALS Modeling and predicting ocean optical properties for coastal waters requires linking optical properties with the physical, chemical, and biological processes

  1. Systems Performance Analyses of Alaska Wind-Diesel Projects; Toksook Bay, Alaska (Fact Sheet)

    SciTech Connect (OSTI)

    Baring-Gould, I.

    2009-04-01

    This fact sheet summarizes a systems performance analysis of the wind-diesel project in Toksook Bay, Alaska. Data provided for this project include community load data, average wind turbine output, average diesel plant output, thermal load data, average net capacity factor, optimal net capacity factor based on Alaska Energy Authority wind data, average net wind penetration, estimated fuel savings, and wind system availability.

  2. On the fluctuations and vertical structure of the shelf circulation off Walvis Bay, Namibia.

    E-Print Network [OSTI]

    Mohrholz, Volker

    20nm off Walvis Bay, Namibia. Spatial and temporal variations of the wind field in the South East Atlantic were investigated by 3-day averaged wind fields measured by the QuikSCAT satellite. The local wind was provided by a time series of hourly wind vectors measured on a moored buoy off Swakopmund. The significant

  3. Chapter 24: Variational Bayes W. Penny, S. Kiebel and K. Friston

    E-Print Network [OSTI]

    Penny, Will

    Chapter 24: Variational Bayes W. Penny, S. Kiebel and K. Friston May 9, 2006 Introduction Bayesian and Bishop 2005]. It is now also widely used in the analysis of neuroimag- ing data [Penny et al. 2003, Woolrich 2004, Sato et al. 2004, Sahani and Nagarajan 2004, Penny et al. 2005, Friston et al. 2006

  4. Sand and mud deposited by Hurricane Katrina on Deer Island, Biloxi Bay, Mississippi

    E-Print Network [OSTI]

    Winglee, Robert M.

    Sand and mud deposited by Hurricane Katrina on Deer Island, Biloxi Bay, Mississippi Annaliese A University of Washington Department of Earth and Space Sciences #12;Sand and mud deposited by Hurricane ................................................................................................................. 14 ABSTRACT Hurricane Katrina overwash berms on both sides of Deer Island, Mississippi, include sub

  5. Luminescence properties of defects in GaN

    SciTech Connect (OSTI)

    Reshchikov, Michael A.; Morkoc, Hadis [Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)

    2005-03-15

    Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects (vacancies, interstitial, and antisites), intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.

  6. Testing a GaAs cathode in SRF gun

    SciTech Connect (OSTI)

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-03-28

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating gradient of the RF guns, potentially offering a long lived cathode with very low emittance. Testing this concept requires preparation of the cathode, transportation to the SRF gun and evaluation of the performance of the cathode and the gun at cryogenic temperatures. In our work at BNL, we successfully activated the bulk GaAs in the preparation chamber. The highest quantum efficient was 10% at 532 nm that fell to 0.5% after 100 hours. We explored three different ways to activate the GaAs. We verified that the GaAs photocathode remains stable for 30 hours in a 10{sup -11} Torr vacuum. Passing the photocathode through the low 10{sup -9} Torr transfer section in several seconds caused the QE to drop to 0.8%. The photocathode with 0.8% QE can be tested for the SRF gun. The gun and beam pipe were prepared and assembled. After baking at 200 C baking, the vacuum of the gun and beam pipe can sustain a low 10{sup -11} Torr at room temperature. The final test to extract electrons from the gun is ongoing. In this paper, we discuss our progress with this SRF gun and the results of the photocathode in preparation chamber and in magnet transfer line.

  7. Energy Efficiency Feasibility Study and Resulting Plan for the Bay Mills Indian Community

    SciTech Connect (OSTI)

    Kushman, Chris

    2014-02-03

    In 2011 the Inter-Tribal Council of Michigan, Inc. was awarded an Energy Efficiency Development and Deployment in Indian Country grant from the U.S. Department of Energy’s Tribal Energy Program. This grant aimed to study select Bay Mills Indian Community community/government buildings to determine what is required to reduce each building’s energy consumption by 30%. The Bay Mills Indian Community (BMIC) buildings with the largest expected energy use were selected for this study and included the Bay Mills Ellen Marshall Health Center building, Bay Mills Indian Community Administration Building, Bay Mills Community College main campus, Bay Mills Charter School and the Waishkey Community Center buildings. These five sites are the largest energy consuming Community buildings and comprised the study area of this project titled “Energy Efficiency Feasibility Study and Resulting Plan for the Bay Mills Indian Community”. The end objective of this study, plan and the Tribe is to reduce the energy consumption at the Community’s most energy intensive buildings that will, in turn, reduce emissions at the source of energy production, reduce energy expenditures, create long lasting energy conscious practices and positively affect the quality of the natural environment. This project’s feasibility study and resulting plan is intended to act as a guide to the Community’s first step towards planned energy management within its buildings/facilities. It aims to reduce energy consumption by 30% or greater within the subject facilities with an emphasis on energy conservation and efficiency. The energy audits and related power consumption analyses conducted for this study revealed numerous significant energy conservation and efficiency opportunities for all of the subject sites/buildings. In addition, many of the energy conservation measures require no cost and serve to help balance other measures requiring capital investment. Reoccurring deficiencies relating to heating, cooling, thermostat setting inefficiencies, powering computers, lighting, items linked to weatherization and numerous other items were encountered that can be mitigated with the energy conservation measures developed and specified during the course of this project.

  8. Reducing methylmercury accumulation in the food webs of San Francisco Bay and its local watersheds

    SciTech Connect (OSTI)

    Davis, J.A., E-mail: jay@sfei.org [San Francisco Estuary Institute, 4911 Central Avenue, Richmond, CA 94804 (United States); Looker, R.E. [San Francisco Bay Regional Water Quality Control Board, 1515 Clay Street, Suite 1400, Oakland, CA 94612 (United States)] [San Francisco Bay Regional Water Quality Control Board, 1515 Clay Street, Suite 1400, Oakland, CA 94612 (United States); Yee, D. [San Francisco Estuary Institute, 4911 Central Avenue, Richmond, CA 94804 (United States)] [San Francisco Estuary Institute, 4911 Central Avenue, Richmond, CA 94804 (United States); Marvin-Di Pasquale, M. [U.S. Geological Survey, Water Resources Division/MS 480, 345 Middlefield Road, Menlo Park, CA 94025 (United States)] [U.S. Geological Survey, Water Resources Division/MS 480, 345 Middlefield Road, Menlo Park, CA 94025 (United States); Grenier, J.L. [San Francisco Estuary Institute, 4911 Central Avenue, Richmond, CA 94804 (United States)] [San Francisco Estuary Institute, 4911 Central Avenue, Richmond, CA 94804 (United States); Austin, C.M. [San Francisco Bay Regional Water Quality Control Board, 1515 Clay Street, Suite 1400, Oakland, CA 94612 (United States)] [San Francisco Bay Regional Water Quality Control Board, 1515 Clay Street, Suite 1400, Oakland, CA 94612 (United States); McKee, L.J.; Greenfield, B.K. [San Francisco Estuary Institute, 4911 Central Avenue, Richmond, CA 94804 (United States)] [San Francisco Estuary Institute, 4911 Central Avenue, Richmond, CA 94804 (United States); Brodberg, R. [California Office of Environmental Health Hazard Assessment, California Environmental Protection Agency, 1001 I Street, Sacramento, CA 95812 (United States)] [California Office of Environmental Health Hazard Assessment, California Environmental Protection Agency, 1001 I Street, Sacramento, CA 95812 (United States); Blum, J.D. [Department of Geological Sciences, University of Michigan, 1100 North University Avenue, Ann Arbor, MI 48109 (United States)] [Department of Geological Sciences, University of Michigan, 1100 North University Avenue, Ann Arbor, MI 48109 (United States)

    2012-11-15

    San Francisco Bay (California, USA) and its local watersheds present an interesting case study in estuarine mercury (Hg) contamination. This review focuses on the most promising avenues for attempting to reduce methylmercury (MeHg) contamination in Bay Area aquatic food webs and identifying the scientific information that is most urgently needed to support these efforts. Concern for human exposure to MeHg in the region has led to advisories for consumption of sport fish. Striped bass from the Bay have the highest average Hg concentration measured for this species in USA estuaries, and this degree of contamination has been constant for the past 40 years. Similarly, largemouth bass in some Bay Area reservoirs have some of the highest Hg concentrations observed in the entire US. Bay Area wildlife, particularly birds, face potential impacts to reproduction based on Hg concentrations in the tissues of several Bay species. Source control of Hg is one of the primary possible approaches for reducing MeHg accumulation in Bay Area aquatic food webs. Recent findings (particularly Hg isotope measurements) indicate that the decades-long residence time of particle-associated Hg in the Bay is sufficient to allow significant conversion of even the insoluble forms of Hg into MeHg. Past inputs have been thoroughly mixed throughout this shallow and dynamic estuary. The large pool of Hg already present in the ecosystem dominates the fraction converted to MeHg and accumulating in the food web. Consequently, decreasing external Hg inputs can be expected to reduce MeHg in the food web, but it will likely take many decades to centuries before those reductions are achieved. Extensive efforts to reduce loads from the largest Hg mining source (the historic New Almaden mining district) are underway. Hg is spread widely across the urban landscape, but there are a number of key sources, source areas, and pathways that provide opportunities to capture larger quantities of Hg and reduce loads from urban runoff. Atmospheric deposition is a lower priority for source control in the Bay Area due to a combination of a lack of major local sources. Internal net production of MeHg is the dominant source of MeHg that enters the food web. Controlling internal net production is the second primary management approach, and has the potential to reduce food web MeHg in some habitats more effectively and within a much shorter time-frame. Controlling net MeHg production and accumulation in the food web of upstream reservoirs and ponds is very promising due to the many features of these ecosystems that can be manipulated. The most feasible control options in tidal marshes relate to the design of flow patterns and subhabitats in restoration projects. Options for controlling MeHg production in open Bay habitat are limited due primarily to the highly dispersed distribution of Hg throughout the ecosystem. Other changes in these habitats may also have a large influence on food web MeHg, including temperature changes due to global warming, sea level rise, food web alterations due to introduced species and other causes, and changes in sediment supply. Other options for reducing or mitigating exposure and risk include controlling bioaccumulation, cleanup of contaminated sites, and reducing other factors (e.g., habitat availability) that limit at-risk wildlife populations.

  9. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  10. Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes

    SciTech Connect (OSTI)

    Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Zhang, Shuming; Li, Deyao; Zhang, Liqun; Yang, Hui [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Cai, Jin; Wang, Hui; Wang, H. B. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Suzhou Nanojoin Photonics Co., Ltd., Suzhou (China)

    2014-10-27

    The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3?nm–6?nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200?A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelength we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.

  11. Targeting Net Zero Energy at Marine Corps Base Hawaii, Kaneohe Bay: Preprint

    SciTech Connect (OSTI)

    Burman, K.; Kandt, A.; Lisell, L.; Booth, S.

    2012-05-01

    This paper summarizes the results of an NREL assessment of Marine Corps Base Hawaii (MCBH), Kaneohe Bay to appraise the potential of achieving net zero energy status through energy efficiency, renewable energy, and hydrogen vehicle integration. In 2008, the U.S. Department of Defense's U.S. Pacific Command partnered with the U.S. Department of Energy's (DOE's) National Renewable Energy Laboratory (NREL) to assess opportunities for increasing energy security through renewable energy and energy efficiency at Hawaii military installations. DOE selected Marine Corps Base Hawaii (MCBH), Kaneohe Bay, to receive technical support for net zero energy assessment and planning funded through the Hawaii Clean Energy Initiative (HCEI). NREL performed a comprehensive assessment to appraise the potential of MCBH Kaneohe Bay to achieve net zero energy status through energy efficiency, renewable energy, and hydrogen vehicle integration. This paper summarizes the results of the assessment and provides energy recommendations. The analysis shows that MCBH Kaneohe Bay has the potential to make significant progress toward becoming a net zero installation. Wind, solar photovoltaics, solar hot water, and hydrogen production were assessed, as well as energy efficiency technologies. Deploying wind turbines is the most cost-effective energy production measure. If the identified energy projects and savings measures are implemented, the base will achieve a 96% site Btu reduction and a 99% source Btu reduction. Using excess wind and solar energy to produce hydrogen for a fleet and fuel cells could significantly reduce energy use and potentially bring MCBH Kaneohe Bay to net zero. Further analysis with an environmental impact and interconnection study will need to be completed. By achieving net zero status, the base will set an example for other military installations, provide environmental benefits, reduce costs, increase energy security, and exceed its energy goals and mandates.

  12. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.

    SciTech Connect (OSTI)

    Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

    2012-03-01

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

  13. Nonlinear Terahertz Metamaterials via Field-Enhanced Carrier Dynamics in GaAs

    E-Print Network [OSTI]

    Fan, Kebin

    We demonstrate nonlinear metamaterial split ring resonators (SRRs) on GaAs at terahertz frequencies. For SRRs on doped GaAs films, incident terahertz radiation with peak fields of ?20–160??kV/cm drives intervalley scattering. ...

  14. Device-level thermal analysis of GaN-based electronics

    E-Print Network [OSTI]

    Bagnall, Kevin Robert

    2013-01-01

    Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

  15. Light extraction in individual GaN nanowires on Si for LEDs

    E-Print Network [OSTI]

    Zhou, Xiang

    GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

  16. Inves&ga&ng the Trade-Off between Luminous Efficacy of Radia&on

    E-Print Network [OSTI]

    California at Davis, University of

    Inves&ga&ng the Trade-Off between Luminous Efficacy of Radia&on and Color, Canada · Lorne Whitehead, Canada #12;Inves&ga&ng the Trade-Off between Luminous

  17. Characterization of NIR InGaAs imager arrays for the JDEM SNAP mission concept

    E-Print Network [OSTI]

    2006-01-01

    Characterization of NIR InGaAs imager arrays for the JDEMapplications. Keywords: NIR, InGaAs, astronomy, low-1.7um band Near Infrared (NIR) focal plane mosaic with high

  18. Atomic structure of postgrowth annealed epitaxial Fe/(001)GaAs interfaces

    E-Print Network [OSTI]

    LeBeau, James; Hu, Qi O.; Palmstrom, Christopher; Stemmer, Susanne

    2008-01-01

    line pro?le across the interface along the line indicated inHAADF images of the GaAs/Fe interface along ?a? ?11 0? GaAsindicates the location of an interface step. Arrows in ?b?

  19. Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Bia?ek, M. Witowski, A. M.; Grynberg, M.; ?usakowski, J.; Orlita, M.; Potemski, M.; Czapkiewicz, M.; Umansky, V.

    2014-06-07

    In order to characterize magnetic field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the magnetoplasmon resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

  20. On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Gao, Feng; Chen, Di; Tuller, Harry L.; Thompson, Carl V.; Palacios, Tomįs

    2014-03-28

    Water-related redox couples in ambient air are identified as an important source of the surface trapping states, dynamic on-resistance, and drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). Through in-situ X-ray photoelectron spectroscopy (XPS), direct signature of the water-related species—hydroxyl groups (OH) was found at the AlGaN surface at room temperature. It was also found that these species, as well as the current collapse, can be thermally removed above 200?°C in vacuum conditions. An electron trapping mechanism based on the H{sub 2}O/H{sub 2} and H{sub 2}O/O{sub 2} redox couples is proposed to explain the 0.5?eV energy level commonly attributed to the surface trapping states. Finally, the role of silicon nitride passivation in successfully removing current collapse in these devices is explained by blocking the water molecules away from the AlGaN surface.

  1. High 400?°C operation temperature blue spectrum concentration solar junction in GaInN/GaN

    SciTech Connect (OSTI)

    Zhao, Liang; Detchprohm, Theeradetch; Wetzel, Christian

    2014-12-15

    Transparent wide gap junctions suitable as high temperature, high flux topping cells have been achieved in GaInN/GaN by metal-organic vapor phase epitaxy. In structures of 25 quantum wells (QWs) under AM1.5G illumination, an open circuit voltage of 2.1?V is achieved. Of the photons absorbed in the limited spectral range of <450?nm, 64.2% are converted to electrons collected at the contacts under zero bias. At a fill factor of 45%, they account for a power conversion efficiency of38.6%. Under concentration, the maximum output power density per sun increases from 0.49?mW/cm{sup 2} to 0.51?mW/cm{sup 2} at 40?suns and then falls 0.42?mW/cm{sup 2} at 150?suns. Under external heating, a maximum of 0.59?mW/cm{sup 2} is reached at 250?°C. Even at 400?°C, the device is fully operational and exceeds room temperature performance. A defect analysis suggests that significantly higher fill factors and extension into longer wavelength ranges are possible with further development. The results prove GaInN/GaN QW solar junctions a viable and rugged topping cell for concentrator photovoltaics with minimal cooling requirements. By capturing the short range spectrum, they reduce the thermal load to any conventional cells stacked behind.

  2. Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1

    E-Print Network [OSTI]

    quantum wells (QW)s,1) and InAs quantum dots at 1.3 mm2) have brought about the commercialization of Ga differential quantum efficiency, T-zero and far field as a function of stripe width. # 2009 The Japan Society offer a number of advantages over their InP counterparts, namely the use of larger substrates (>3 in

  3. Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1

    E-Print Network [OSTI]

    Lu, Wei

    quantum dots by low-energy ion sputtering on a surface has been reported in several semiconductor sys quantum dots on the surface. The mechanism involves the balance between roughening and smoothing actions], Ge [10], as well as a variety of III­V compounds (GaSb [11], InP [12], and InSb [13]) can form

  4. Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Lin, Jie; Llopis, Antonio; Krokhin, Arkadii; Neogi, Arup, E-mail: arup@unt.edu [Department of Physics, University of North Texas, Denton, Texas 76203 (United States); Pereira, Sergio [CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Watson, Ian M. [SUPA, Institute of Photonics, University of Strathclyde, Glasgow (United Kingdom)

    2014-06-16

    The light enhancement phenomena in InGaN/GaN multi-quantum wells (MQWs) infiltrated with metal nanoparticles (NPs) are studied using resonant and off-resonant localized plasmon interactions. The emission and recombination characteristics of carriers in InGaN/GaN MQW structures with inverted hexagonal pits (IHPs) are modified distinctly depending on the nature of their interaction with the metal NPs and with the pumping and emitted photons. It is observed that the emission intensity of light is significantly enhanced when the emission energy is off-resonant to the localized plasmon frequency of the metal nanoparticles. This results in enhanced emission from MQW due to Au nanoparticles and from IHPs due to Ag nanoparticles. At resonant-plasmon frequency of the Ag NPs, the emission from MQWs is quenched due to the re-absorption of the emitted photons, or due to the drift carriers from c-plane MQWs towards the NPs because of the Coulomb forces induced by the image charge effect.

  5. PP-89-1 Bangor Hydro-Electric Company | Department of Energy

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on DeliciousMathematicsEnergyInterested PartiesBuilding energy codes have a moreINCREASES5-246

  6. Molecular Dynamics Simulation of GaAs Molecular Beam Epitaxy D. A. Murdick,1

    E-Print Network [OSTI]

    Wadley, Haydn

    of Virginia, Charlottesville, Virginia 22904, USA 2 Department of Materials, University of Oxford, Oxford OX1 3PH, UK ABSTRACT The vapor deposition of epitaxial GaAs and (Ga,Mn)As thin films during far-temperature growth of Ga0.94Mn0.06As and the Mn clustering trends in as-grown films. INTRODUCTION GaAs is widely used

  7. GaN Initiative for Grid Applications (GIGA)

    SciTech Connect (OSTI)

    Turner, George

    2015-07-03

    For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 ?m, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and vertical devices were explored, with the conclusion that lateral devices are superior for fundamental thermal reasons, as well as for the demonstration of future generations of monolithic power circuits. As part of the materials and device investigations breakdown mechanisms in GaN-on-Si structures were fully characterized and effective electric field engineering was recognized as critical for achieving even higher voltage operation. Improved device contact technology was demonstrated, including the first gold-free metallizations (to enable processing in CMOS foundries) while maintaining low specific contact resistance needed for high-power operation and 5-order-of magnitude improvement in device leakage currents (essential for high power operation). In addition, initial GaN-on-Si epitaxial growth was performed on 8”/200 mm Si starting substrates.

  8. DISSERTATION ANTICIPATED PERFORMANCE OF Cu(In,Ga)Se2 SOLAR CELLS IN THE

    E-Print Network [OSTI]

    Sites, James R.

    i DISSERTATION ANTICIPATED PERFORMANCE OF Cu(In,Ga)Se2 SOLAR CELLS IN THE THIN-FILM LIMIT Submitted ENTITLED `ANTICIPATED PERFORMANCE OF Cu(In,Ga)Se2 SOLAR CELLS IN THE THIN-FILM LIMIT' BE ACCEPTED(In,Ga)Se2 SOLAR CELLS IN THE THIN-FILM LIMIT The demand for alternative sources of energy is rapidly

  9. TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron

    E-Print Network [OSTI]

    neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

  10. Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a

    E-Print Network [OSTI]

    Okamoto, Koichi

    is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

  11. Near perfect solar absorption in ultra-thin-film GaAs photonic crystals

    E-Print Network [OSTI]

    John, Sajeev

    Near perfect solar absorption in ultra-thin-film GaAs photonic crystals Sergey Eyderman,*a Alexei voltage of GaAs solar cells. The current world record for high efficiency solar cells is held by thin ultra-thin (GaAs in low-cost solar cells. However, this reduction in the volume

  12. ORIGINAL ARTICLE Highly efficient GaAs solar cells by limiting light emission

    E-Print Network [OSTI]

    Polman, Albert

    a non-concentrating system with limited emission angle in a thin, light trapping GaAs solar cellORIGINAL ARTICLE Highly efficient GaAs solar cells by limiting light emission angle Emily D Kosten1 of a high-quality GaAs solar cell is a feasible route to achieving power conversion efficiencies above 38

  13. Inversion of wurtzite GaN(0001) by exposure to V. Ramachandran and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    in the growth rate of GaN on different crystallographic planes [8], pointing to a surfactant effect of Mg on Ga in these films and the carrier concentration was therefore very low [1,2]; dopant activa- tion can be achieved of Mg at GaN growth temperatures is an issue and dopant in- corporation may be rather inefficient [5

  14. Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    SciTech Connect (OSTI)

    Cheng, Junjie; Li, Jiadong; Miao, Bin; Wu, Dongmin; Wang, Jine; Pei, Renjun; Wu, Zhengyan

    2014-08-25

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup ?14} to 10{sup ?8} M and a detection limit below 10{sup ?14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

  15. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992

    SciTech Connect (OSTI)

    Venkatasubramanian, R.

    1993-01-01

    This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The ``cycled`` organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al{sub 0.34}Ga{sub 0.66}As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  16. The readers point vessel: hull analysis of an eighteenth century merchant sloop excavated in St. Ann's Bay, Jamaica 

    E-Print Network [OSTI]

    Cook, Gregory D.

    1997-01-01

    's Bay, Jamaica in 1994. Excavators removed overburden and the ballast pile, recovering over 600 artifacts associated with the vessel-After exposing well-preserved hull remains, divers recorded the ship's structure. The vessel is preserved from the base...

  17. Development of a decadal-scale estuarine geomorphic model for Suisun Bay, California: calibration, validation, and idealized time-stepping

    E-Print Network [OSTI]

    Ganju, Neil K; Schoellhamer, David H; Younis, Bassam A

    2006-01-01

    summer cause wind-wave resuspension of bottom sediment inflow, tidal energy, wind-wave resuspension in San Pablo Bay.flow and wind-wave resuspension was superimposed on a

  18. The effect of anthropogenic development on sediment loading to bays on St. John, U.S. Virgin Islands

    E-Print Network [OSTI]

    McCreery, Helen F

    2007-01-01

    In order to assess the impact of anthropogenic development on sediment delivery rates to bays on St. John, U.S.V.I., I developed a sediment loading prediction model. Based on the modified universal soil loss equation, this ...

  19. Wind, sea ice, inertial oscillations and upper ocean mixing in Marguerite Bay, Western Antarctic Peninsula : observations and modeling

    E-Print Network [OSTI]

    Hyatt, Jason

    2006-01-01

    Two years of moored oceanographic and automatic weather station data which span the winter ice seasons of 2001-2003 within Marguerite Bay on the western Antarctic Peninsula (wAP) shelf were collected as part of the Southern ...

  20. DEVELOPMENT OF A COASTAL MARGIN OBSERVATION AND ASSESSMENT SYSTEM (CMOAS) TO CAPTURE THE EPISODIC EVENTS IN A SHALLOW BAY 

    E-Print Network [OSTI]

    Islam, Mohammad S.

    2010-07-14

    in real-time monitoring of hydrodynamic, meteorological and water quality parameters in the bay. Three different platform types used for the installation of sensor systems are: 1) Fixed Robotic, 2) Mobile, and 3) Remote. An automated profiler system...

  1. Turbulence Mixing and Transport Mechanisms in a Coastal Ecosystem: Bay of La Paz, Baja California Sur, Mexico 

    E-Print Network [OSTI]

    Pettijohn, Burkely Ashton

    2014-02-10

    ABSTRACT Turbulence Mixing and Transport Mechanisms in a Coastal Ecosystem: Bay of La Paz, Baja California Sur, Mexico. (May 2014) Burkely Ashton Pettijohn Department of Marine Sciences Texas A&M University Research Advisor: Dr. Ayal Anis...

  2. Seasonal variation of diatoms and dinoflagellates in Monterey Bay, CA determined by Chemtax alanysis of HPLC pigment data

    E-Print Network [OSTI]

    Keating, Kelene

    2013-01-01

    and Benguela), Vol. 1. Garrison, D.L. (1976). ContributionFishery Bulletin 74,183-194. Garrison, D.L. (1979). MontereyResearch 1, 241–265. Garrison, D.L. (1981). Monterey Bay

  3. Nitrification in the euphotic zone as evidenced by nitrate dual isotopic composition: Observations from Monterey Bay, California

    E-Print Network [OSTI]

    Pennington, J. Timothy

    from Monterey Bay, California Scott D. Wankel,1,2,3 Carol Kendall,4 J. Timothy Pennington,5 Francisco P, and NO3 Ą assimilation in marine environments. Citation: Wankel, S. D., C. Kendall, J. T. Pennington, F

  4. COMPARISON OF THE FATE OF DISSOLVED ORGANIC MATTER IN TWO COASTAL SYSTEMS: HOG ISLAND BAY, VA (USA)

    E-Print Network [OSTI]

    Lawrence, Deborah

    COMPARISON OF THE FATE OF DISSOLVED ORGANIC MATTER IN TWO COASTAL SYSTEMS: HOG ISLAND BAY, VA (USA) AND PLUM ISLAND SOUND, MA (USA) A Thesis Presented to The Faculty of the School of Marine Science............................... 55 DISCUSSION ................................................................... 57 Plum Island

  5. Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

    SciTech Connect (OSTI)

    Sundaram, S.; El Gmili, Y.; Bonanno, P. L. [CNRS, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Puybaret, R.; Li, X.; Voss, P. L.; Ougazzaden, A. [Georgia Institute of Technology, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Pantzas, K.; Patriarche, G. [CNRS, UPR LPN, Route de Nozay, 91460 Marcoussis (France); Orsal, G.; Salvestrini, J. P., E-mail: salvestr@metz.supelec.fr [Université de Lorraine, Supélec, LMOPS, EA4423, 57070 Metz (France); Troadec, D. [Université des Sciences et Technologies de Lille, CNRS, UMR 8520 IEMN, 59000 Lille (France); Cai, Z.-H. [Advanced Photon Source, 9700 S. Cass Avenue, Argonne, Illinois 60439 (United States)

    2014-10-28

    Uniform, dense, single-phase, 150?nm thick indium gallium nitride (InGaN) nanostructure (nanorods and nanostripes) arrays have been obtained on gallium nitride templates, by metal organic chemical vapor deposition and nanoscale selective area growth on silicon dioxide patterned masks. The 150?nm thick InGaN nanorods have a perfect hexagonal pyramid shape with relatively homogenous indium concentration up to 22%, which is almost twice as high as in planar InGaN grown in the same condition, and luminesce at 535?nm. InGaN nanostripes feature c-axis oriented InGaN in the core which is covered by InGaN grown along semi-polar facets with higher In content. Transmission electron microscope and sub micron beam X-rays diffraction investigations confirm that both InGaN nanostructures are mostly defect free and monocrystalline. The ability to grow defect-free thick InGaN nanostructures with reduced polarization and high indium incorporation offers a solution to develop high efficiency InGaN-based solar cells.

  6. Method of plasma etching GA-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2013-01-01

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

  7. Method of plasma etching Ga-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  8. AlGaAs-On-Insulator Nonlinear Photonics

    E-Print Network [OSTI]

    Pu, Minhao; Semenova, Elizaveta; Yvind, Kresten

    2015-01-01

    The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications including high speed optical signal processing, on-chip multi-wavelength lasers, metrology, molecular spectroscopy, and quantum information science. Aluminium gallium arsenide (AlGaAs) exhibits very high material nonlinearity and low nonlinear loss when operated below half its bandgap energy. However, difficulties in device processing and low device effective nonlinearity made Kerr frequency comb generation elusive. Here, we demonstrate AlGaAs-on-insulator as a nonlinear platform at telecom wavelengths. Using newly developed fabrication processes, we show high-quality-factor (Q>100,000) micro-resonators with integrated bus waveguides in a planar circuit where optical parametric oscillation is achieved with a record low threshold power of 3 mW and a frequency comb spanning 350 nm i...

  9. Formation and properties of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Lockwood, D.J.; Fraser, J.W.; Graham, M.J.; Isaacs, H.S.

    1996-06-01

    Porous structures on n-type GaAs (100) can be grown electrochemically in chloride-containing solutions. Crystallographic etching of the sample is a precursor stage of the attack. Polarization curves reveal the existanece of a critical onset potential for por formation (PFP). PFP is strongly dependent on the doping level of the sample and presence of surface defects. Good agreement between PFP and breakdown voltage of the space charge layer is found. Surface analysis by EDX, AES, and XPS show that the porous structure consists mainly of GaAs and that anion uptake in the structure can only observed after attackhas been initiated. Photoluminescence measurements reveal (under certain conditions) visible light emission from the porous structure.

  10. A study of the Texas hard clam: distribution and growth of Mercenaria mercenaria texana in Texas bays 

    E-Print Network [OSTI]

    Craig, M. Alison

    1985-01-01

    A STUDY OF THE TEXAS HARD CLAM: DISTRIBUTION AND GROWTH OF MERCENARIA MERCENARIA TEXANA IN TEXAS BAYS A Thesis by MARGARET ALISON CRAIG Submitted to the Graduate College of Texas A6M University in partial fulfillment of the requirements... for the degree of MASTER OF SCIENCE December 1985 Major Subject: Oceanography A STUDY OF THE TEXAS HARD CLAN: DISTRIBUTION AND GROWTH OF NERCENARIA NERCENARIA TEXANA IN TEXAS BAYS? A Thesis by MARGARET ALISON CRAIG Approved as to style and content by...

  11. Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    to be further improved in order for the high- power LEDs to penetrate into the consumer market of gen- eral to higher optical output power and external quantum efficiency, compared to the devices with p-AlGaN EBLGaN/GaN based light-emitting diodes (LEDs) possess unique advantages including high energy conversion effi

  12. The transputer based GA. SP data acquisition system

    SciTech Connect (OSTI)

    Colombo, D.; Avano, B.; DePoli, M.; Maron, G. ); Negro, A.; Parlati, G. )

    1992-04-01

    In this paper, the new data acquisition for the GA.SP detector is presented. It is a distributed system based on a network of 40 T800 and T222 transputers linked to a VME system used for histogram storage. A 100 MBit/s FDDI ring connects the system to UNIX workstations used for the experiment control, histogram display and second level data analysis.

  13. Minority-carrier properties of GaAs on silicon

    SciTech Connect (OSTI)

    Ahrenkiel, R.K.; Al-Jassim, M.M.; Dunlavy, D.J.; Jones, K.M.; Vernon, S.M.; Tobin, S.P.; Haven, V.E.

    1988-07-18

    The minority-carrier lifetimes of the heteroepitaxial system of GaAs on Si are limited by recombination at mismatch dislocations. Here we show that increasing the thickness of the buffer layer, with an additional annealing step, reduces the dislocation density by about an order of magnitude. At the same time, the minority-carrier lifetime in these double heterostructures increases more than an order of magnitude.

  14. Ohmic contacts to p-type Ga

    E-Print Network [OSTI]

    Jorge Estevez, Humberto Angel

    1996-01-01

    resistivity was achieved by developing the Si(750A)/Pd(400A)/Zn(xA)/Pd(IOOA)/p-GaP scheme. Values of the contact resistivity in the range of 3xlO-5 to 7xlO-' nCM2 were obtained. It was found that the optimum Zn layer thickness is 30 A for the Pd and Si...

  15. Conductivity based on selective etch for GaN devices and applications thereof

    DOE Patents [OSTI]

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  16. Continued development of metallization for GaAs concentrator cells

    SciTech Connect (OSTI)

    Tobin, S.P.

    1988-11-01

    The objective of this work was the integration of thermally stable metallizations with a high-efficiency GaAs concentrator cell process. For p-GaAs we used a Pt-TiN-Au metallization developed under a previous Sandia Contract. For n-GaAs the best results were obtained for AuGe-TiN-Au. Baseline p/n cells with a CrAu metallization achieved efficiencies of 25.4% at 200 suns. Efficiencies were about 22% at one sun. At one sun, p/n cells with high-temperature contacts were 22.2% efficient, showing that there is no efficiency penalty with the high-temperature metallization. Development efforts on n/p cells yielded high short-circuit currents and open-circuit voltages, with both conventional and high-temperature metallizations. Thermal annealing tests showed that cells with the Pt-TiN-Au metallization were more stable than those with the baseline metallization, withstanding a 15-minute anneal at 500/degree/C with negligible efficiency degradation. 22 refs., 64 figs., 54 tabs.

  17. InGaAsSb thermophotovoltaic diode physics evaluation

    SciTech Connect (OSTI)

    Charache, G.W.; Baldasaro, P.F.; Danielson, L.R. [Lockheed-Martin, Inc., Schenectady, NY (United States)] [and others

    1998-06-01

    The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.52 eV InGaAsSb diodes used in this analysis the measured dark current is 2 {times} 10{sup {minus}5} A/cm{sup 2}, versus a potential Auger limit 1 {times} 10{sup {minus}5} A/cm{sup 2}, a radiative limit of 2 {times} 10{sup {minus}6} A/cm{sup 2} (no photon recycling), and an absolute thermodynamic limit of 1.4 {times} 10{sup {minus}7} A/cm{sup 2}. These dark currents are equivalent to open circuit voltage gains of 20 mV (7%), 60 mV (20%) and 140 mV (45%), respectively.

  18. Ga lithography in sputtered niobium for superconductive micro and nanowires

    SciTech Connect (OSTI)

    Henry, M. David; Wolfley, Steve; Monson, Todd; Lewis, Rupert

    2014-08-18

    This work demonstrates the use of focused ion beam (FIB) implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12?nm deep with a 14?nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10??m by 10??m and 100??m by 100??m, demonstrate that doses above than 7.5?×?10{sup 15?}cm{sup ?2} at 30?kV provide adequate mask protection for a 205?nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75?nm wide by 10??m long connected to 50??m wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature (T{sub c})?=?7.7?K was measured using a magnetic properties measurement system. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.

  19. Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates

    SciTech Connect (OSTI)

    Bengoechea-Encabo, A.; Albert, S.; Barbagini, F.; Sanchez-Garcia, M. A.; Calleja, E. [ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n 28040 Madrid (Spain)] [ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n 28040 Madrid (Spain); Zuńiga-Perez, J.; Mierry, P. de [CRHEA-CNRS, 06560 Valbonne (France)] [CRHEA-CNRS, 06560 Valbonne (France); Trampert, A. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)] [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2013-12-09

    The aim of this work is the selective area growth (SAG) of GaN nanocolumns, with and without an InGaN insertion, by molecular beam epitaxyon semi-polar (11–22) GaN templates. The high density of stacking faults present in the template is strongly reduced after SAG. A dominant sharp photoluminescence emission at 3.473 eV points to high quality strain-free material. When embedding an InGaN insertion into the ordered GaN nanostructures, very homogeneous optical properties are observed, with two emissions originating from different regions of each nanostructure, most likely related to different In contents on different crystallographic planes.

  20. Gallium hole traps in irradiated KTiOPO{sub 4}:Ga crystals

    SciTech Connect (OSTI)

    Grachev, V.; Meyer, M.; Malovichko, G.; Hunt, A. W.

    2014-12-07

    Nominally pure and gallium doped single crystals of potassium titanyl phosphate (KTiOPO{sub 4}) have been studied by Electron Paramagnetic Resonance at low temperatures before and after irradiation. Irradiation with 20?MeV electrons performed at room temperature and liquid nitrogen temperature caused an appearance of electrons and holes. Gallium impurities act as hole traps in KTiOPO{sub 4} creating Ga{sup 4+} centers. Two different Ga{sup 4+} centers were observed, Ga1 and Ga2. The Ga1 centers are dominant in Ga-doped samples. For the Ga1 center, a superhyperfine structure with one nucleus with nuclear spin ½ was registered and attributed to the interaction of gallium electrons with a phosphorus nucleus or proton in its surrounding. In both Ga1 and Ga2 centers, Ga{sup 4+} ions substitute for Ti{sup 4+} ions, but with a preference to one of two electrically distinct crystallographic positions (site selective substitution). The Ga doping eliminates one of the shortcomings of KTP crystals—ionic conductivity of bulk crystals. However, this does not improve significantly the resistance of the crystals to electron and ?-radiation.

  1. Efficiency calculations of thin-film GaAs solar cells on Si substrates

    SciTech Connect (OSTI)

    Yamaguchi, M.; Amano, C.

    1985-11-01

    Dislocation effect upon the efficiency of single-crystal thin-film AlGaAs-GaAs heteroface solar cells on Si substrates is analyzed. Solar-cell properties are calculated based on a simple model; in the model, dislocations act as recombination centers to reduce the minority-carrier diffusion length in each layer and increase the space-charge layer recombination current. Numerical analysis is also carried out to optimize thin-film AlGaAs-GaAs heteroface solar-cell structures. The fabrication of thin-film AlGaAs-GaAs heteroface solar cells with a practical efficiency larger than 18% on Si substrates appears possible if the dislocation density in the thin-film GaAs layer is less than 10/sup 6/ cm/sup -2/.

  2. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

    SciTech Connect (OSTI)

    Young, Erin C.; Wu Feng; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.; Romanov, Alexey E.

    2012-10-01

    In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

  3. Electron heating due to microwave photoexcitation in the high mobility GaAs/AlGaAs two dimensional electron system

    SciTech Connect (OSTI)

    Ramanayaka, A. N.; Mani, R. G.; Wegscheider, W.

    2013-12-04

    We extract the electron temperature in the microwave photo-excited high mobility GaAs/AlGaAs two dimensional electron system (2DES) by studying the influence of microwave radiation on the amplitude of Shubnikov-de Haas oscillations (SdHOs) in a regime where the cyclotron frequency, ?{sub c}, and the microwave angular frequency, ?, satisfy 2? ? ?{sub c} ? 3.5? The results indicate that increasing the incident microwave power has a weak effect on the amplitude of the SdHOs and therefore the electron temperature, in comparison to the influence of modest temperature changes on the dark-specimen SdH effect. The results indicate negligible electron heating under modest microwave photo-excitation, in good agreement with theoretical predictions.

  4. Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires

    SciTech Connect (OSTI)

    Chen, S. L.; Filippov, S.; Chen, W. M.; Buyanova, I. A.; Ishikawa, Fumitaro

    2014-12-22

    Radiative carrier recombination processes in GaAs/GaNAs core/shell nanowires grown by molecular beam epitaxy on a Si substrate are systematically investigated by employing micro-photoluminescence (?-PL) and ?-PL excitation (?-PLE) measurements complemented by time-resolved PL spectroscopy. At low temperatures, alloy disorder is found to cause localization of photo-excited carriers leading to predominance of optical transitions from localized excitons (LE). Some of the local fluctuations in N composition are suggested to lead to strongly localized three-dimensional confining potential equivalent to that for quantum dots, based on the observation of sharp and discrete PL lines within the LE contour. The localization effects are found to have minor influence on PL spectra at room temperature due to thermal activation of the localized excitons to extended states. Under these conditions, photo-excited carrier lifetime is found to be governed by non-radiative recombination via surface states which is somewhat suppressed upon N incorporation.

  5. Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces

    SciTech Connect (OSTI)

    Li, Huijie E-mail: sh-yyang@semi.ac.cn; Zhao, Guijuan; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Yang, Shaoyan E-mail: sh-yyang@semi.ac.cn; Wang, Lianshan; Zhu, Qinsheng

    2014-05-21

    One dimensional electron gas (1DEG) arrays in vicinal GaN/AlGaN heterostructures have been studied. The steps at the interface would lead to the lateral barriers and limit the electron movement perpendicular to such steps. Through a self-consistent Schrödinger-Poisson approach, the electron energy levels and wave functions were calculated. It was found that when the total electron density was increased, the lateral barriers were lowered due to the screening effects by the electrons, and the electron gas became more two-dimension like. The calculated 1DEG densities were compared to the experimental values and good agreements were found. Moreover, we found that a higher doping density is more beneficial to form 1-D like electron gas arrays.

  6. Terrestrial Concentrator PV Modules Based on GaInP/GaAs/Ge TJ Cells and Minilens Panels

    SciTech Connect (OSTI)

    Rumyantsev, V. D.; Sadchikov, N. A.; Chalov, A. E.; Ionova, E. A.; Friedman, D. J.; Glenn, G.

    2006-01-01

    This paper is a description of research activity in the field of cost-effective modules realizing the concept of very high solar concentration with small-aperture area Fresnel lenses and multijunction III-V cells. Structural simplicity and 'all-glass' design are the guiding principles of the corresponding development. The advanced concentrator modules are made with silicone Fresnel lens panels (from 8 up to 144 lenses, each lens is 4 times 4 cm{sup 2} in aperture area) with composite structure. GaInP/GaAs/Ge triple-junction cells with average efficiencies of 31.1 and 34.7% at 1000 suns were used for the modules. Conversion efficiency as high as 26.3% has been measured indoors in a test module using a newly developed large-area solar simulator.

  7. Fish condition as an indicator of water quality in upper Galveston Bay system, Texas 

    E-Print Network [OSTI]

    Matlock, Gary C

    1972-01-01

    Conversion Equaoion Hyd!oiogical Nlothods SVater Temperature D is so lvecl 0 xygen 4 3 Conductivity (Salinity) /I 6 Hy!1! ogen-Ion ConcentraUon (pH) Turoldity TABLE OF CONTENTS (continued) ~Pa e LIFE HISTORy 47 Anchoa mitchilli R I' 2t...!ocembcr 1971 (sec '1'abl, 8, p ges 6Z nnd 63 for ex;&h&nation of hearlincs a!'d vn! bols) 65 RankI!&g of yca! s for: ach an. ". 1 (T:!bj&s Bay, Cedar B!'" u, und T;ini ~y Bay) r!n L!! . b!'!'s o( co!!dlt'on 7' LIST QF TABLE:S (continued) Table of anchovy...

  8. Recent applications of coiled tubing in remedial wellwork at Prudhoe Bay

    SciTech Connect (OSTI)

    Loveland, K.R.; Bond, A.J.

    1996-12-31

    The vast number of wells and unique operating conditions in Alaska`s Prudhoe Bay field have presented many opportunities for those involved in remedial wellwork. Among the technologies that have either been pioneered, tested, or applied there, coiled tubing (CT) ranks as one of the most long lasting and widely used. This paper highlights the more recent applications of CT in the field. The paper begins with a brief overview of the Prudhoe Bay Unit`s (PBU) CT wellwork program and then follows with discussions on eight CT applications that have been developed or expanded in the last two years. Some are new technology and others are old techniques with a new design. Descriptions and procedures are given for each in addition to performance results thus far.

  9. Evaluation of CALPUFF nitrogen deposition modeling in the Chesapeake Bay Watershed Area using NADP data

    SciTech Connect (OSTI)

    Garrison, M.; Mayes, P.; Sherwell, J.

    1998-12-31

    The CALMET/CALPUFF modeling system has been used to estimate nitrogen deposition in an area surrounding Baltimore and the northern portion of the Chesapeake Bay. Comprehensive NO{sub x} emissions inventories and meteorological data bases have been developed to conduct the modeling. This paper discusses the results of an evaluation of predicted nitrogen wet deposition rates compared to measured rates at two NADP/NTN sites in Maryland, Wye and White Rock. Underprediction of wet deposition rates is investigated through the use of sensitivity and diagnostic evaluations of model performance. A suggested change to the calculation of NO{sub x} transformation rates involving an alternative specification of minimum NO{sub x} concentrations was made to CALPUFF and the performance evaluation was re-done. Results of the new evaluation show significantly improved model performance, and therefore the modification is tentatively proposed for use in further applications of CALPUFF to the assessment of nitrogen deposition in the Chesapeake Bay watershed.

  10. Improved coiled-tubing squeeze-cementing techniques at Prudhoe Bay

    SciTech Connect (OSTI)

    Hornbrook, P.R.; Mason, C.M. )

    1991-04-01

    This paper presents major changes in coiled-tubing squeeze-cementing techniques used in the Prudhoe Bay Unit Western Operating Area (PBUWOA). Changes include introduction of a polymer diluent to replace borax contamination, increased differential pressures placed on squeeze and coil, reduced cement volumes, and incorporation of an inflow test and resqueeze procedure. These changes resulted in increased squeeze effectiveness by reducing equipment and engineering time requirements and by shortening well shut-in time after the workover.

  11. Observations of Fallout from the Fukushima Reactor Accident in San Francisco Bay Area Rainwater

    E-Print Network [OSTI]

    Eric B. Norman; Christopher T. Angell; Perry A. Chodash

    2011-03-30

    We have observed fallout from the recent Fukushima Dai-ichi reactor accident in samples of rainwater collected in the San Francisco Bay area. Gamma ray spectra measured from these samples show clear evidence of fission products - 131,132I, 132Te, and 134,137Cs. The activity levels we have measured for these isotopes are very low and pose no health risk to the public.

  12. A hole accelerator for InGaN/GaN light-emitting diodes Zi-Hui Zhang, Wei Liu, Swee Tiam Tan, Yun Ji, Liancheng Wang, Binbin Zhu, Yiping Zhang, Shunpeng Lu,

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    GaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, the effectiveness of the hole ac- celerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED. VC 2014 AIP Publishing LLC. [http://dx.doi.org/10

  13. InGaN/GaN light-emitting diode with a polarization tunnel junction Zi-Hui Zhang, Swee Tiam Tan, Zabu Kyaw, Yun Ji, Wei Liu et al.

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    to the enhanced optical output power and external quantum efficiency. Compared to the reference InGaN/GaN LEDs; accepted 29 April 2013; published online 15 May 2013) We report InGaN/GaN light-emitting diodes (LED have been devoted to boosting the optical output power and enhancing the external quantum efficiency

  14. 1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge

    E-Print Network [OSTI]

    Yoon, Soon Fatt

    The effect of different arsenic species (As[subscript 2] or As[subscript 4]) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+n-n+ devices (samples C and D) ...

  15. A geographic information system (GIS) based determination of estuarine and marine wetland and shoreline changes in the Galveston Bay estuary from 1995 to 2002 

    E-Print Network [OSTI]

    Taylor, Christina Claudette

    2008-10-10

    for each of the quads (ex. Cove_95). The projection and coordinate system for a layer image were set during layer creation. A habitat field was added to the attribute table of each quad layer to allow classification by habitat based on the Cowardin...………………………... ..................................................... 25 6 Changes in the Trinity Bay portion of Galveston Bay Estuary (Highlands, Cove, Anahuac, Laporte, Morgans Point, Umbrella Point, and Oak Island) of the Galveston Bay System from 1995-2002............. 28 7 Map of the changes...

  16. Target Mass Monitoring and Instrumentation in the Daya Bay Antineutrino Detectors

    E-Print Network [OSTI]

    Henry R. Band; Jeffrey J. Cherwinka; Lee S. Greenler; Karsten M. Heeger; Paul Hinrichs; Li Kang; Christine A. Lewis; Shanfeng Li; Shengxin Lin; Michael C. McFarlane; Wei Wang; David M. Webber; Yadong Wei; Thomas S. Wise; Qiang Xiao; Li Yang; Zhijian Zhang

    2013-03-05

    The Daya Bay experiment measures sin^2 2{\\theta}_13 using functionally identical antineutrino detectors located at distances of 300 to 2000 meters from the Daya Bay nuclear power complex. Each detector consists of three nested fluid volumes surrounded by photomultiplier tubes. These volumes are coupled to overflow tanks on top of the detector to allow for thermal expansion of the liquid. Antineutrinos are detected through the inverse beta decay reaction on the proton-rich scintillator target. A precise and continuous measurement of the detector's central target mass is achieved by monitoring the the fluid level in the overflow tanks with cameras and ultrasonic and capacitive sensors. In addition, the monitoring system records detector temperature and levelness at multiple positions. This monitoring information allows the precise determination of the detectors' effective number of target protons during data taking. We present the design, calibration, installation and in-situ tests of the Daya Bay real-time antineutrino detector monitoring sensors and readout electronics.

  17. Manilla Bay 1, 1A, 1A sidetrack; success against all odds

    SciTech Connect (OSTI)

    Durkee, E.F.; Rillera, F.G. )

    1996-01-01

    The discovery of gas in Manila Bay is one of the more significant exploration discoveries in the Western Pacific in recent years. Within the Philippine Archipelago there is no better geographic or economic location to discover gas than at Manila Bay. Geologically, the well has proven that new concepts applied to old areas, in opposition to past beliefs and dogmas is still a valid way to find hydrocarbons. This is especially true re the western margin of the Central Valley of Luzon. New Venture reviewers (more than 100) were generally negative about the possibility of limestone objectives at this setting. The operators eventually drilled the prospect by themselves. The Manila Bay discovery well is on a large basement uplift with more than 2000 feet of vertical closure and 8,000 acres of areal closure at Miocene levels. The geological surprise was that the well drilled through a Pliocene Limestone (700 feet) charged with gas. An estimated in place resource of up to 2 TCF is possible. This is economically very significant for the Philippines as it is only 30 km from downtown Manila, a city of some 10 million people without any indigenous energy supply. Over-pressured fresh water sands induced drilling problems in the initial well MB-1AST and the deeper primary objectives in Middle to Lower Miocene, also predicted to be carbonates, were not reached. A second well to appraise the Pliocene and explore the deep zones will be drilled in early 1996.

  18. Manilla Bay 1, 1A, 1A sidetrack; success against all odds

    SciTech Connect (OSTI)

    Durkee, E.F.; Rillera, F.G.

    1996-12-31

    The discovery of gas in Manila Bay is one of the more significant exploration discoveries in the Western Pacific in recent years. Within the Philippine Archipelago there is no better geographic or economic location to discover gas than at Manila Bay. Geologically, the well has proven that new concepts applied to old areas, in opposition to past beliefs and dogmas is still a valid way to find hydrocarbons. This is especially true re the western margin of the Central Valley of Luzon. New Venture reviewers (more than 100) were generally negative about the possibility of limestone objectives at this setting. The operators eventually drilled the prospect by themselves. The Manila Bay discovery well is on a large basement uplift with more than 2000 feet of vertical closure and 8,000 acres of areal closure at Miocene levels. The geological surprise was that the well drilled through a Pliocene Limestone (700 feet) charged with gas. An estimated in place resource of up to 2 TCF is possible. This is economically very significant for the Philippines as it is only 30 km from downtown Manila, a city of some 10 million people without any indigenous energy supply. Over-pressured fresh water sands induced drilling problems in the initial well MB-1AST and the deeper primary objectives in Middle to Lower Miocene, also predicted to be carbonates, were not reached. A second well to appraise the Pliocene and explore the deep zones will be drilled in early 1996.

  19. Bay Ridge Gardens - Mixed-Humid Affordable Multifamily Housing Deep Energy Retrofit

    SciTech Connect (OSTI)

    Lyons, J.; Moore, M.; Thompson, M.

    2013-08-01

    Under this project, Newport Partners (as part of the BA-PIRC research team) evaluated the installation, measured performance, and cost-effectiveness of efficiency upgrade measures for a tenant-in-place DER at the Bay Ridge multifamily (MF) development in Annapolis, Maryland. The design and construction phase of the Bay Ridge project was completed in August 2012. This report summarizes system commissioning, short-term test results, utility bill data analysis, and analysis of real-time data collected over a one-year period after the retrofit was complete. The Bay Ridge project is comprised of a 'base scope' retrofit which was estimated to achieve a 30%+ savings (relative to pre-retrofit) on 186 apartments, and a 'DER scope' which was estimated to achieve 50% savings (relative to pre-retrofit) on a 12-unit building. The base scope was applied to the entire apartment complex, except for one 12-unit building which underwent the DER scope. A wide range of efficiency measures was applied to pursue this savings target for the DER building, including improvements/replacements of mechanical equipment and distribution systems, appliances, lighting and lighting controls, the building envelope, hot water conservation measures, and resident education. The results of this research build upon the current body of knowledge of multifamily retrofits. Towards this end, the research team has collected and generated data on the selection of measures, their estimated performance, their measured performance, and risk factors and their impact on potential measures.

  20. Ecological Forecasting in Chesapeake Bay: Using a Mechanistic-Empirical Modelling Approach

    SciTech Connect (OSTI)

    Brown, C. W.; Hood, Raleigh R.; Long, Wen; Jacobs, John M.; Ramers, D. L.; Wazniak, C.; Wiggert, J. D.; Wood, R.; Xu, J.

    2013-09-01

    The Chesapeake Bay Ecological Prediction System (CBEPS) automatically generates daily nowcasts and three-day forecasts of several environmental variables, such as sea-surface temperature and salinity, the concentrations of chlorophyll, nitrate, and dissolved oxygen, and the likelihood of encountering several noxious species, including harmful algal blooms and water-borne pathogens, for the purpose of monitoring the Bay's ecosystem. While the physical and biogeochemical variables are forecast mechanistically using the Regional Ocean Modeling System configured for the Chesapeake Bay, the species predictions are generated using a novel mechanistic empirical approach, whereby real-time output from the coupled physical biogeochemical model drives multivariate empirical habitat models of the target species. The predictions, in the form of digital images, are available via the World Wide Web to interested groups to guide recreational, management, and research activities. Though full validation of the integrated forecasts for all species is still a work in progress, we argue that the mechanistic–empirical approach can be used to generate a wide variety of short-term ecological forecasts, and that it can be applied in any marine system where sufficient data exist to develop empirical habitat models. This paper provides an overview of this system, its predictions, and the approach taken.

  1. Graded InxGa1 xAs/GaAs 1.3 m wavelength light emitting diode structures grown with molecular beam epitaxy

    E-Print Network [OSTI]

    Graded InxGa1 xAs/GaAs 1.3 m wavelength light emitting diode structures grown with molecular beam 11 June 1997; accepted for publication 29 September 1997 In this study 1.1­1.3 m wavelength light at a lower cost. Such a technology could have an impact on the economic feasibility of fiber to the home

  2. Si3N4 on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure

    E-Print Network [OSTI]

    Rockett, Angus

    from XPS as a function of photoelectron takeoff angle, initially increased rapidly with nitridation either from the higher temperature or from nitridation of all of the Si, leaving the Si3N4 in direct contact with the GaAs. © 1998 American Vacuum Society. S0734-211X 98 00302-3 I. INTRODUCTION Ga

  3. Proposal for the award of a contract, without competitive tendering, for the design and construction of a new 400 kV transmission feeder bay

    E-Print Network [OSTI]

    2015-01-01

    Proposal for the award of a contract, without competitive tendering, for the design and construction of a new 400 kV transmission feeder bay

  4. Avian Communities in Tidal Salt Marshes of San Francisco Bay: A Review of Functional Groups by Foraging Guild and Habitat Association

    E-Print Network [OSTI]

    2011-01-01

    2006). San Francisco Bay song spar- rows are adapted to highswallows (Hirundinidae), savannah spar- rows (Passerculussurvival in tidal-marsh song spar- rows was maximized when

  5. Visualizing microbial pollution in Santa Monica Bay with Geographic Information Systems (GIS) and through field-testing a rapid, robust, field-portable water detection sensing system

    E-Print Network [OSTI]

    2009-01-01

    Abstract: Chronic water pollution plague southern Californiaand understanding of water pollution as well as assist inreflecting extent of water pollution in Santa Monica Bay

  6. Climate Change and Water Resources in California: The Cost of Conservation versus Supply Augmentation for the East Bay Municipal Utility District

    E-Print Network [OSTI]

    Mourad, Bessma

    2009-01-01

    Gammon, Rovert. 2009. Sierra Water Grab. East Bay Express,www.eastbayexpress.com/news/sierra_water_grab/Content? oid=UCB: 1070. Maddaus Water Management.   Conservation

  7. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2}

    SciTech Connect (OSTI)

    Peter, Sebastian C. [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064 (India); Malliakas, Christos D. [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); Nakotte, Heinze; Kothapilli, Karunakar [Physics Department, New Mexico State University, Las Cruces, NM 88003 (United States); Los Alamos Neutron Science Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Rayaprol, Sudhindra [UGC-DAE Consortium for Scientific Research, Mumbai Centre, BARC, R-5 Shed, Trombay, Mumbai 400085 (India); Schultz, Arthur J. [X-Ray Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Kanatzidis, Mercouri G., E-mail: m-kanatzidis@northwestern.edu [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); Materials Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States)

    2012-03-15

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a=12.2261(20) Angstrom-Sign , b=10.7447(20) Angstrom-Sign , c=8.4754(17) Angstrom-Sign and {beta}=110.288(30) Degree-Sign (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge){sub n}. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a=b=5.9874(6) Angstrom-Sign and c=15.1178(19) Angstrom-Sign . The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{proportional_to}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures. - Graphical abstract: The compounds Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} are obtained from reactions of Yb and Ge in excess liquid gallium. Highlights: Black-Right-Pointing-Pointer Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} are two new polygallides. Black-Right-Pointing-Pointer The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was established using neutron diffraction data. Black-Right-Pointing-Pointer YbGa{sub 4}Ge{sub 2} is one of the rare polar intermetallic compounds. Black-Right-Pointing-Pointer The physical properties of Yb{sub 3}Ga{sub 7}Ge{sub 3} point to a Fermi-liquid regime at low temperature.

  8. Temporally and spatially resolved photoluminescence investigation of (112{sup Æ}2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates

    SciTech Connect (OSTI)

    Liu, B.; Smith, R.; Athanasiou, M.; Yu, X.; Bai, J.; Wang, T.

    2014-12-29

    By means of time-resolved photoluminescence (PL) and confocal PL measurements, temporally and spatially resolved optical properties have been investigated on a number of In{sub x}Ga{sub 1?x}N/GaN multiple-quantum-well (MQW) structures with a wide range of indium content alloys from 13% to 35% on (112{sup Æ}2) semi-polar GaN with high crystal quality, obtained through overgrowth on nanorod templates. With increasing indium content, the radiative recombination lifetime initially increases as expected, but decreases if the indium content further increases to 35%, corresponding to emission in the green spectral region. The reduced radiative recombination lifetime leads to enhanced optical performance for the high indium content MQWs as a result of strong exciton localization, which is different from the behaviour of c-plane InGaN/GaN MQWs, where quantum confined Stark effect plays a dominating role in emission process.

  9. H irradiation effects on the GaAs-like Raman modes in GaAs{sub 1-x}N{sub x}/GaAs{sub 1-x}N{sub x}:H planar heterostructures

    SciTech Connect (OSTI)

    Giulotto, E. Geddo, M.; Patrini, M.; Guizzetti, G.; Felici, M.; Capizzi, M.; Polimeni, A.; Martelli, F.; Rubini, S.

    2014-12-28

    The GaAs-like longitudinal optical phonon frequency in two hydrogenated GaAs{sub 1-x}N{sub x}/GaAs{sub 1-x}N{sub x}:H microwire heterostructures—with similar N concentration, but different H dose and implantation conditions—has been investigated by micro-Raman mapping. In the case of GaAs{sub 0.991}N{sub 0.009} wires embedded in barriers where GaAs-like properties are recovered through H irradiation, the phonon frequency in the barriers undergoes a blue shift with respect to the wires. In GaAs{sub 0.992}N{sub 0.008} wires embedded in less hydrogenated barriers, the phonon frequency exhibits an opposite behavior (red shift). Strain, disorder, phonon localization effects induced by H-irradiation on the GaAs-like phonon frequency are discussed and related to different types of N-H complexes formed in the hydrogenated barriers. It is shown that the red (blue) character of the frequency shift is related to the dominant N-2H (N-3H) type of complexes. Moreover, for specific experimental conditions, an all-optical determination of the uniaxial strain field is obtained. This may improve the design of recently presented devices that exploit the correlation between uniaxial stress and the degree of polarization of photoluminescence.

  10. Low dimensional GaAs/air vertical microcavity lasers

    SciTech Connect (OSTI)

    Gessler, J.; Steinl, T.; Fischer, J.; Höfling, S.; Schneider, C.; Kamp, M.; Mika, A.; S?k, G.; Misiewicz, J.

    2014-02-24

    We report on the fabrication of gallium arsenide (GaAs)/air distributed Bragg reflector microresonators with indium gallium arsenide quantum wells. The structures are studied via momentum resolved photoluminescence spectroscopy which allows us to investigate a pronounced optical mode quantization of the photonic dispersion. We can extract a length parameter from these quantized states whose upper limit can be connected to the lateral physical extension of the microcavity via analytical calculations. Laser emission from our microcavity under optical pumping is observed in power dependent investigations.

  11. Distribution of bismuth atoms in epitaxial GaAsBi

    SciTech Connect (OSTI)

    Sales, David [Universidad de Cadiz, Spain; Guerreo, E. [Universidad de Cadiz, Spain; Rodrigo, J.F. [Universidad de Cadiz, Spain; Galindo, P.L. [Universidad de Cadiz, Spain; Yanez, A. [University of Cadiz, Spain; Shafi, M. [University of Nottingham, Nottingham UK; Khatab, A. [University of Nottingham, Nottingham UK; Mari, R.H. [University of Nottingham, Nottingham UK; Henini, M. [University of Nottingham, Nottingham UK; Novikov, S. [University of Nottingham, Nottingham UK; Chisholm, Matthew F [ORNL; Molina, S.I. [Universidad de Cadiz, Spain

    2011-01-01

    The distribution of Bi atoms in epitaxial GaAs{sub (1-x)}Bi{sub x} is analyzed through aberration-corrected Z-contrast images. The relation between the atomic number and the intensity of the images allows quantifying the distribution of Bi atoms in this material. A bidimensional map of Bi atoms is extracted showing areas where nanoclustering is possible and evidencing the location of Bi at As-substitutional positions in the lattice. The distribution of Bi atoms differs from a random spatial pattern of Bi atoms in the material.

  12. Structure, transport and thermal properties of UCoGa

    SciTech Connect (OSTI)

    Purwanto, A.; Robinson, R.A.; Prokes, K.

    1994-04-01

    By means of neutron powder diffraction, we find that UCoGa crystallizes in the hexagonal ZrNiAl structure and orders ferromagnetically at low temperatures with magnetic moments stacked along the c axis. The magnetic-ordering temperature is reflected in anomalies in the temperature dependencies of the electrical resistivity and the specific heat at Tc = 47 K. Furthermore, the strong anisotropy in the electrical resistivity for i {parallel} c and i {perpendicular} c indicates a significant contribution of the magnetic anisotropy to the electrical resistivity.

  13. Enhanced Magnetism of Fe3O4 Nanoparticles with Ga Doping

    SciTech Connect (OSTI)

    Pool, V. L.; Klem, M. T.; Chorney, C. L.; Arenholz, E.; Idzerda, Y.U.

    2010-10-22

    Magnetic (Ga{sub x}Fe{sub 1-x}){sub 3}O{sub 4} nanoparticles with 5%-33% gallium doping (x = 0.05-0.33) were measured using x-ray absorption spectroscopy and x-ray magnetic circular dichroism to determine that the Ga dopant is substituting for Fe{sub 3+} as Ga{sub 3+} in the tetrahedral A-site of the spinel structure, resulting in an overall increase in the total moment of the material. Frequency-dependent alternating-current magnetic susceptibility measurements showed these particles to be weakly interacting with a reduction of the cubic anisotropy energy term with Ga concentration. The element-specific dichroism spectra show that the average Fe moment is observed to increase with Ga concentration, a result consistent with the replacement of A-site Fe by Ga.

  14. Low-cost, high-efficiency solar cells utilizing GaAs-on-Si technology

    SciTech Connect (OSTI)

    Vernon, S.M. )

    1993-04-01

    This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, [approximately] 1 [times] 10[sup 5] cm[sup [minus]5], as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 [times]10[sup 7] cm[sup [minus]2]. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.

  15. Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy

    SciTech Connect (OSTI)

    Reuters, Benjamin; Finken, M.; Wille, A.; Kalisch, H.; Vescan, A.; Hollaender, B.; Heuken, M.

    2012-11-01

    Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30-62% Al, 5-29% In, and 23-53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.

  16. DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    Sites, James R.

    OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important contributor to the global energy demand by the mid-21st-century. Cu(In,Ga)Se2 (CIGS) solar cells, which haveDISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler

  17. Investigation of photoexcited parallel conduction in GaAs/AlGaAs heterostructures in the quantum limit 

    E-Print Network [OSTI]

    Kobiela, Pawel Stanislaw

    1986-01-01

    conduction paths, one in the 2-DEG (medium 1) and the second an another medium (like AlGaAs), the conductivity tensor can be expressed as o' = rri + ap. Further analysis can be carried out by considering two separate limits: low and high magnetic fields.... The interval between the current pulses depended on the temperature and varied from 2-3 sec. at 10 K to about 1 min. at 15 mK. For each magnetic field scan between 0 and 7. 5 T about 500 readings were taken for l&oth current directions. As mentioned before...

  18. High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier

    SciTech Connect (OSTI)

    Petukhov, A. A., E-mail: andrey-rus29@rambler.ru; Zhurtanov, B. E.; Kalinina, K. V.; Stoyanov, N. D.; Salikhov, H. M.; Mikhailova, M. P.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-09-15

    The electroluminescent properties of an n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with a high potential barrier in the conduction band (large conduction-band offset) at the n-GaSb/n-InGaAsSb type-II heterointerface ({Delta}E{sub c} = 0.79 eV) are studied. Two bands with peaks at 0.28 and 0.64 eV at 300 K, associated with radiative recombination in n-InGaAsSb and n-GaSb, respectively, are observed in the electroluminescence (EL) spectrum. In the entire temperature range under study, T = 290-480 K, additional electron-hole pairs are formed in the n-InGaAsSb active region by impact ionization with hot electrons heated as a result of the conduction-band offset. These pairs contribute to radiative recombination, which leads to a nonlinear increase in the EL intensity and output optical power with increasing pump current. A superlinear increase in the emission power of the long-wavelength band is observed upon heating in the temperature range T = 290-345 K, and a linear increase is observed at T > 345 K. This work for the first time reports an increase in the emission power of a light-emitting diode structure with increasing temperature. It is shown that this rise is caused by a decrease in the threshold energy of the impact ionization due to narrowing of the band gap of the active region.

  19. Low-temperature charge transport in Ga-acceptor nanowires implanted by focused-ion beams

    E-Print Network [OSTI]

    Robinson, SJ

    2008-01-01

    Low-Temperature Charge Transport in Ga-Acceptor Nanowiresare highly nonlinear at low temperatures, and a thresholdmetallic conductance at low temperatures could be achieved

  20. Vacancy defects in as-grown and neutron irradiated GaP studied by positrons

    SciTech Connect (OSTI)

    Dlubek, G.; Bruemmer, O.; Polity, A.

    1986-08-18

    Positron lifetime and Doppler-broadening measurements have been used to study vacancy defects in n-italic-type GaP. Vacancies in the P sublattice with a concentration of some 10/sup 17/ cm/sup -3/ were observed in as-grwon GaP. The vacancies disappear during annealing at 500--800 /sup 0/C. In neutron-irradiated GaP positrons are trapped by Ga vacancies which anneal out in two stages situated at 300--550 /sup 0/C and 550--700 /sup 0/C.